Rotation holding device and substrate processing apparatus including the same

Abstract

To provide a rotation holding device that enables uniform processing over the entire substrate that is sucked and held by a suction holding portion.SOLUTION: A rotation holding device 10 includes a suction holding portion 11 having an upper surface 11u that sucks and holds the central portion of the lower surface of a substrate W, and a rotation drive portion 13 that rotates the suction holding portion 11 around a vertical axis. The upper surface 11u includes a peripheral area, and a central area surrounded by the peripheral area. A plurality of first suction holes are provided in the peripheral area, and a plurality of second suction holes are provided in the central area. The areal density of the plurality of first suction holes in the peripheral area is higher than the areal density of the plurality of second suction holes in the central area. The surface densities of the plurality of first suction holes and the surface densities of the plurality of second suction holes do not have to satisfy the above relationship. In this case, the rotation holding device 10 is provided with a temperature adjusting portion that adjusts the temperature of at least a part of the lower peripheral edge portion of the substrate W that is not sucked and held by the suction holding portion 11.SELECTED DRAWING: Figure 1

Description

Technical Field

[0001] The present invention relates to a rotary holding device that rotates while sucking and holding the central portion of the lower surface of a substrate, and a substrate processing apparatus including the same.

Background Art

[0002] A substrate processing apparatus is used to perform various processes on substrates such as semiconductor substrates, substrates for flat panel displays (FPDs) such as liquid crystal display devices or organic EL (Electro Luminescence) display devices, optical disk substrates, magnetic disk substrates, magneto-optical disk substrates, photomask substrates, ceramic substrates, or solar cell substrates.

[0003] As an example of a substrate processing apparatus, there is a coating apparatus that forms a resist film on the surface of a substrate. In the coating processing apparatus, various processing liquids such as a cleaning liquid or a resist liquid are supplied to the rotating substrate. This coating processing apparatus includes a spin chuck that rotates while holding a single substrate in a horizontal posture.

[0004] As an example of such a spin chuck, Patent Document 1 describes a spin chuck that sucks and holds the central portion of the back surface of a substrate. The spin chuck has a circular upper surface. On the upper surface of the spin chuck, a convex portion is formed at the peripheral edge, and a plurality of minute protrusions are formed inside the convex portion. Further, a plurality of suction holes are formed on the upper surface of the spin chuck.

[0005] With the substrate placed on the spin chuck, the atmosphere in the space formed between the upper surface of the spin chuck and the substrate and inside the annular convex portion is sucked, whereby the substrate is sucked and held on the spin chuck.

Prior Art Documents

Patent Documents

[0006]

Patent Document 1

SUMMARY OF THE INVENTION

PROBLEMS TO BE SOLVED BY THE INVENTION

[0007] In recent years, the thinning of substrates according to the applications of semiconductor products has been promoted. Such thinning of the substrate reduces the rigidity of the substrate. Therefore, depending on the configuration of the spin chuck, when the substrate rotates, the portion of the substrate that is not adsorbed by the spin chuck may deform, causing the holding state of the substrate to become unstable. Alternatively, a temperature difference may occur between the portion of the substrate that is not adsorbed by the spin chuck and the portion that is adsorbed by the spin chuck during rotation of the substrate.

[0008] The instability of the holding state of the rotating substrate and the temperature difference generated between a plurality of portions of the rotating substrate as described above reduce the uniformity of the processing over the entire substrate.

[0009] An object of the present invention is to provide a rotation holding device that enables uniform processing over the entire substrate adsorbed and held by an adsorption holding portion, and a substrate processing device including the same.

MEANS FOR SOLVING THE PROBLEMS

[0010] (1) A rotation holding device according to a first invention is a rotation holding device that rotates while adsorbing and holding the central portion of the lower surface of a substrate, and includes an adsorption holding portion having an upper surface that adsorbs and holds the central portion of the lower surface of the substrate, and a rotation driving portion that rotates the adsorption holding portion around a rotation axis extending in the vertical direction. The upper surface has a peripheral region along the outer edge and a central region surrounded by the peripheral region. A plurality of first suction holes are provided in the peripheral region, and a plurality of second suction holes are provided in the central region. The surface density of the plurality of first suction holes in the peripheral region is greater than the surface density of the plurality of second suction holes in the central region. The suction holding portion is formed so as to overlap the central region in plan view and extend linearly from the rotation axis toward the outer edge of the suction holding portion, and includes a plurality of linear paths that guide the atmosphere on the upper surface sucked at the plurality of second suction holes to the outside of the suction holding portion, and an annular path that overlaps the peripheral region in plan view and surrounds the plurality of linear paths and guides the atmosphere on the upper surface sucked at the plurality of first suction holes to the outside of the suction holding portion.

[0011] In the rotation holding device, the central portion of the lower surface of the substrate is adsorbed and held by the adsorption holding portion. The adsorption holding portion that adsorbs and holds the substrate is rotated by a rotation driving portion. At this time, the portion of the lower surface of the substrate that faces the central region of the upper surface of the adsorption holding portion is sucked by a plurality of second suction holes. Further, the portion of the lower surface of the substrate that faces the peripheral region of the upper surface of the adsorption holding portion is sucked by a plurality of first suction holes.

[0012] Here, the surface density of the plurality of first suction holes in the peripheral region is larger than the surface density of the plurality of second suction holes in the central region. Therefore, on the upper surface of the adsorption holding portion, the portion of the substrate facing the peripheral region is adsorbed with a larger suction force than the portion of the substrate facing the central region. Thereby, when the substrate adsorbed and held by the adsorption holding portion rotates, the portion of the substrate located on the peripheral region is suppressed from lifting from the upper surface of the adsorption holding portion, and the holding state of the substrate is stabilized.

[0013] Therefore, when processing is performed on the substrate rotated by the above rotation holding device, it is possible to prevent the processing of the substrate from varying at a plurality of portions on the substrate due to a part of the substrate lifting from the upper surface of the adsorption holding portion. As a result, uniform processing over the entire substrate becomes possible. Also, as described above, the suction holding portion is formed so as to overlap the central region in plan view and extend linearly from the rotation axis toward the outer edge of the suction holding portion, and includes a plurality of linear paths that guide the atmosphere on the upper surface sucked at the plurality of second suction holes to the outside of the suction holding portion, and an annular path that overlaps the peripheral region in plan view and surrounds the plurality of linear paths and guides the atmosphere on the upper surface sucked at the plurality of first suction holes to the outside of the suction holding portion. In this case, with a simple configuration, it becomes possible to suck and hold the central portion of the lower surface of the substrate by the plurality of first suction holes and the plurality of second suction holes.

[0014] (2) The plurality of first suction holes are arranged on at least one first circle centered on the rotation axis in the peripheral region, and the plurality of second suction holes are arranged on at least one second circle centered on the rotation axis in the central region. The linear density of the plurality of first suction holes on each first circle in the peripheral region may be larger than the linear density of the plurality of second suction holes on any second circle in the central region.

[0015] In this case, the plurality of first suction holes are dispersed and arranged on the first circle, and the plurality of second suction holes are dispersed and arranged on the second circle, so that the central portion of the lower surface of the substrate is more stably adsorbed and held on the upper surface of the adsorption holding portion.

[0016] (3) The number of the plurality of first suction holes on each first circle in the peripheral region may be larger than the number of the plurality of second suction holes on any second circle in the central region. Thereby, with a simple configuration, the surface density of the plurality of first suction holes in the peripheral region can be made larger than the surface density of the plurality of second suction holes in the central region.

[0017] (4) The angular pitch between each two adjacent first suction holes on each first circle in the peripheral region may be smaller than the angular pitch between each two adjacent second suction holes on any second circle in the central region.

[0018] In this case, with a simple configuration, the surface density of the plurality of first suction holes in the peripheral region can be made larger than the surface density of the plurality of second suction holes in the central region.

[0022] ( 5 ) The rotation holding device according to the 2 invention is a rotation holding device that rotates while adsorbing and holding the central portion of the lower surface of a substrate, and includes an adsorption holding portion having an upper surface that adsorbs and holds the central portion of the lower surface of the substrate, and a rotation driving portion that rotates the adsorption holding portion around a rotation shaft extending in the vertical direction. The upper surface has a peripheral region along the outer edge and a central region surrounded by the peripheral region. A plurality of first suction holes are provided in the peripheral region, and a plurality of second suction holes are provided in the central region. The surface density of the plurality of first suction holes in the peripheral region is larger than the surface density of the plurality of second suction holes in the central region. At least some of the first suction holes formed at the position farthest from the rotation shaft among the plurality of first suction holes have a smaller diameter than the other first suction holes and the plurality of second suction holes.

[0023] In this case, it is possible to prevent the suction force acting on the substrate from becoming excessively large from at least some of the first suction holes farthest from the rotation shaft. Thereby, unintended deformation of the substrate is reduced.

[0025] ( 6)The rotation holding device may further include a temperature adjusting unit that adjusts the temperature of a portion of the substrate that is not adsorbed and held by the adsorption holding unit while the adsorption holding unit adsorbs and holds the substrate.

[0026] According to the above temperature adjusting unit, when a process is performed on a substrate rotated by the rotation holding device, it is possible to suppress the occurrence of a temperature difference between a plurality of portions of the substrate. Therefore, a uniform process can be performed over the entire substrate.

[0027] ( 7 )The temperature adjusting unit may adjust the temperature of a portion of the substrate that is not adsorbed and held by the adsorption holding unit so that the temperature of the portion of the substrate that is not adsorbed and held by the adsorption holding unit matches or approaches the temperature of the portion of the substrate that is adsorbed and held by the adsorption holding unit. Thereby, the occurrence of a temperature difference between a plurality of portions of the substrate rotated by the rotation holding device is suppressed. Therefore, a more uniform process can be performed over the entire substrate.

[0042] ( 8 )The rotation holding device according to the 3 first invention is a substrate processing device that performs a predetermined process on a substrate, and includes the above rotation holding device and a processing liquid supply device that supplies a processing liquid onto the substrate while the substrate is adsorbed and held by the adsorption holding unit and rotated by the rotation driving unit.

[0043] That substrate processing device The above includes a rotation holding device. According to the rotation holding device according to the first invention, it is possible to suppress a part of the rotated substrate from lifting off from the upper surface of the adsorption holding unit. Therefore, a uniform process using a processing liquid can be performed on the entire substrate rotated by the rotation holding device. 。

Effects of the Invention

[0044] According to the present invention, it becomes possible to perform a uniform process on the entire substrate adsorbed and held by the adsorption holding unit.

Brief Description of the Drawings

[0045]

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Embodiments for Carrying Out the Invention

[0046] Hereinafter, a rotation holding device and a substrate processing device according to an embodiment of the present invention will be described with reference to the drawings. In the following description, the substrate refers to a substrate for FPD (Flat Panel Display) used in a liquid crystal display device or an organic EL (Electro Luminescence) display device, a semiconductor substrate, a substrate for an optical disk, a substrate for a magnetic disk, a substrate for a magneto-optical disk, a substrate for a photomask, a ceramic substrate, a substrate for a solar cell, or the like. In the following description, a coating apparatus for applying a resist solution to a substrate will be described as an example of the substrate processing device. Further, in the following description, the substrate to be processed has an outer peripheral end portion that is at least partially circular. A notch or an orientation flat for identifying the position and orientation of the substrate is locally formed at the outer peripheral end portion of the substrate. Further, an outer support ring is formed over the entire circumference at the outer peripheral end portion of the substrate. In the substrate, the thickness (substrate thickness) of the region inside the rim portion is 200 μm or less and is smaller than the thickness of the rim portion.

[0047] 1. First Embodiment [1] Overall Configuration of Coating Apparatus FIG. 1 is a schematic cross-sectional view of a coating apparatus according to the first embodiment, and FIG. 2 is a schematic plan view of the coating apparatus 1 in FIG. 1. In FIG. 2, illustration of some of the components of the coating apparatus 1 shown in FIG. 1 is omitted. Further, the substrate W shown in FIG. 1 is indicated by a dashed line.

[0048] As shown in FIG. 1, the coating apparatus 1 according to the present embodiment mainly includes a rotation holding device 10 and a processing liquid supply device 20. The rotation holding device 10 is configured to be able to rotate while adsorbing and holding the central portion of the lower surface of the substrate W.

[0049] The processing liquid supply device 20 includes a liquid nozzle 21 and a processing liquid supply system 22. The processing liquid supply system 22 supplies a resist liquid to the liquid nozzle 21. The liquid nozzle 21 discharges the supplied resist liquid onto the upper surface of the substrate W that is adsorbed and held by the processing liquid supply device 20 and rotated. Thereby, a resist film is formed on the upper surface of the unprocessed substrate W (coating process). The substrate W on which the resist film is formed is carried out of the coating apparatus 1, and an exposure process is performed in an exposure apparatus (not shown).

[0050] A specific configuration of the rotation holding device 10 will be described. The rotation holding device 10 includes an adsorption holding portion 11, a rotation shaft 12, a rotation driving portion 13, a suction device 14, a cup 15, a drain guide pipe 16, a gas nozzle 17, and a gas supply system 18.

[0051] The adsorption holding portion 11 has a flat upper surface 11u that adsorbs and holds the central portion of the lower surface of the substrate W, and is attached to the upper end portion of the rotation shaft 12 that extends in the vertical direction. A large number of suction holes vh1, vh2 (see FIG. 4 described later) are formed in the upper surface 11u of the adsorption holding portion 11. The rotation driving portion 13 rotates the rotation shaft 12 around its axis.

[0052] As shown by the thick dotted line in FIG. 1, an intake passage vp is formed inside the suction holding portion 11 and the rotating shaft 12. The intake passage vp is connected to a suction device 14. The suction device 14 includes a suction mechanism such as an aspirator, etc., sucks the atmosphere of the space on the upper surface 11u of the suction holding portion 11 through the intake passage vp, and discharges it to the outside of the coating device 1.

[0053] As shown in FIG. 2, the cup 15 is provided so as to surround the periphery of the suction holding portion 11 in plan view, and is configured to be movable to a plurality of positions in the vertical direction by a lifting mechanism (not shown). As shown in FIG. 1, the cup 15 includes a bottom portion 15x and an outer peripheral wall portion 15y. The bottom portion 15x has a substantially annular shape. The inner peripheral end portion of the bottom portion 15x is bent upward by a predetermined height. The outer peripheral wall portion 15y extends upward by a predetermined height from the outer peripheral end portion of the bottom portion 15x, bends, and is further formed to extend obliquely upward toward the suction holding portion 11.

[0054] A drain 15d is formed in the bottom portion 15x of the cup 15. A drain guide pipe 16 is attached to the portion of the bottom portion 15x where the drain 15d is formed. The lower end portion of the drain guide pipe 16 is connected to a drainage system (not shown).

[0055] As shown in FIG. 2, a gas nozzle 17 is provided at a position between the inner peripheral end portion of the outer peripheral wall portion 15y of the cup 15 and the outer peripheral end portion of the suction holding portion 11 in plan view. FIG. 3 is an external perspective view of the gas nozzle 17. As shown in FIG. 3, the gas nozzle 17 has a substantially L shape and includes a gas introduction portion 17a and a gas ejection portion 17b. The gas introduction portion 17a has a cylindrical shape and is provided at the lower portion of the gas nozzle 17. The gas ejection portion 17b is a slit-shaped opening and is formed at the upper end portion of the gas nozzle 17. Inside the gas nozzle 17, a gas supply passage 17v connecting the gas introduction portion 17a to the gas ejection portion 17b is formed.

[0056] As shown in FIGS. 1 and 2, the gas nozzle 17 is arranged at a position near the outer peripheral end of the adsorption holding part 11 such that the gas ejection part 17b faces the lower surface of the substrate W adsorbed and held by the adsorption holding part 11. The coating apparatus 1 has a configuration in which a rotation holding device 10 and a processing liquid supply device 20 are housed in a housing (not shown). The gas nozzle 17 is fixed to the housing of the coating apparatus 1, for example. With the substrate W adsorbed and held by the adsorption holding part 11, the distance between the lower surface of the substrate W and the upper end (gas ejection part 17b) of the gas nozzle 17 is set to about 0.5 mm to 10 mm, for example. Further, the gas nozzle 17 is arranged such that the slit-shaped opening of the gas ejection part 17b extends in the direction of the diameter of the substrate W adsorbed and held by the adsorption holding part 11. Furthermore, a gas supply system 18 is connected to the gas introduction part 17a (FIG. 3) of the gas nozzle 17.

[0057] In the coating apparatus 1 having the above configuration, during the coating process of the substrate W, the substrate W is held in a horizontal posture by the adsorption holding part 11. Also, the cup 15 is positioned in the vertical direction such that the inner peripheral surface of the outer peripheral wall part 15y faces the outer peripheral end of the substrate W in the horizontal direction. In this state, when the rotation driving part 13 operates, the substrate W is rotated.

[0058] Subsequently, the liquid nozzle 21 is moved above the substrate W by a nozzle moving device (not shown). In this state, a resist liquid is discharged from the moved liquid nozzle 21 onto the substrate W. Thereby, the resist liquid is applied onto the rotating substrate W. The resist liquid scattered outward from the rotating substrate W is received by the inner peripheral surface of the outer peripheral wall part 15y of the cup 15. The received resist liquid is collected at the bottom 15x of the cup 15 and guided to a drainage system (not shown) through the drain 15d and the drainage guide pipe 16.

[0059] In the coating device 1, the temperature of the substrate W (hereinafter referred to as the processing temperature) that should be maintained during the coating process is predetermined. The processing temperature is, for example, 23°C. However, as will be described later, when the substrate W adsorbed and held by the adsorption holding portion 11 rotates, the temperature of the portion of the substrate W that is not in contact with the adsorption holding portion 11 may be lower than the temperature of the other portion in contact with the adsorption holding portion 11. Therefore, even when the temperature of the portion of the substrate W in contact with the adsorption holding portion 11 is maintained at the processing temperature, the temperature of the portion of the substrate W not in contact with the adsorption holding portion 11 may be maintained at a temperature lower than the processing temperature.

[0060] Therefore, the gas supply system 18 supplies a gas (hereinafter referred to as the temperature-adjusted gas) having a temperature higher than, for example, the processing temperature to the gas nozzle 17 during the coating process. In this case, the temperature-adjusted gas supplied to the gas nozzle 17 is jetted from the gas jetting portion 17b of the gas nozzle 17 to a part of the lower surface of the substrate W being coated. Thereby, the temperature of the portion of the substrate W not in contact with the adsorption holding portion 11 becomes equal to or approaches the temperature (for example, the processing temperature) of the other portion of the substrate W in contact with the adsorption holding portion 11.

[0061] During the coating process of the substrate W, the flow rate of the temperature-adjusted gas jetted from the gas jetting portion 17b to the substrate W is adjusted so that the substrate W adsorbed and held by the adsorption holding portion 11 is not peeled off from the upper surface 11u of the adsorption holding portion 11. As the temperature-adjusted gas supplied to the gas nozzle 17, heated nitrogen gas is used. Alternatively, heated dry air can also be used as the temperature-adjusted gas supplied to the gas nozzle 17.

[0062] By the way, in the coating device 1 according to the present embodiment, the adsorption holding portion 11 has a configuration for stabilizing the holding state of the substrate W during the coating process. Hereinafter, a specific configuration example of the adsorption holding portion 11 will be described.

[0063] [2] Specific configuration example of the adsorption holding portion 11 (1) First configuration example FIG. 4 is an exploded perspective view of the adsorption holding part 11 according to the first configuration example. FIG. 5 is a plan view of the adsorption holding part 11 of FIG. 4 according to the first configuration example. FIG. 6 is a longitudinal sectional view taken along line A-A of the adsorption holding part 11 of FIG. 5. In FIG. 5, in addition to the overall plan view of the adsorption holding part 11, an enlarged plan view of a part of the outer peripheral end of the adsorption holding part 11 and its peripheral part is shown in the balloon.

[0064] As shown in FIG. 4, the adsorption holding part 11 according to the first configuration example is mainly composed of a disc-shaped member 40 and an annular member 50. The disc-shaped member 40 and the annular member 50 are made of, for example, a resin excellent in corrosion resistance. The disc-shaped member 40 has an adsorption part 41, an intake path forming part 42, and a support part 43 arranged from top to bottom. The adsorption part 41 includes the upper surface 11u of the adsorption holding part 11 and is configured to be able to adsorb and hold the central part of the lower surface of the substrate W.

[0065] The diameter of the upper surface 11u is within the range of 15% of the diameter of the substrate W with the radius of the substrate W as the central value. When the diameter of the substrate W is 300 mm, the diameter of the upper surface 11u is preferably within the range of 130 mm or more and 170 mm or less. When the diameter of the upper surface 11u is within the range of 15% of the diameter of the substrate W with the radius of the substrate W as the central value, the central part of the lower surface of the substrate W is adsorbed over a wider range and the holding state is more stable compared to the case where the diameter of the upper surface 11u is smaller than that range. Also, compared to the case where the diameter of the upper surface 11u is larger than the above range, it is easier to fabricate the adsorption holding part 11 having a flat upper surface 11u over the whole.

[0066] As shown in FIG. 6, in the disc-shaped member 40, the diameters of the intake path forming part 42 and the support part 43 are smaller than the diameter of the adsorption part 41. Thereby, the outer peripheral end part and its peripheral part of the adsorption part 41 project in a flange shape outward (sideward) of the disc-shaped member 40 at a position above the intake path forming part 42 and the support part 43.

[0067] In the following description, a virtual axis extending vertically through the center of the adsorption holding portion 11 is referred to as the central axis 11c. In the intake passage forming portion 42, a plurality of horizontal holes linearly extending in the horizontal direction from the central axis 11c toward the outer peripheral end portion of the adsorption holding portion 11 are formed. The internal space of each of these plurality of horizontal holes constitutes a linear path LP that is a part of the above-described intake passage vp. As shown in FIG. 5, the plurality of linear paths LP are formed at a constant angular pitch β about the central axis 11c. The internal spaces of the plurality of linear paths LP communicate with each other at the central portion of the adsorption holding portion 11. In this example, the angular pitch β is 30°. Note that the angular pitch β may be 15° or may be 60°.

[0068] As shown in FIG. 6, the support portion 43 located at the lowermost portion of the disk-shaped member 40 has a mounting portion 43a that is attached to the upper end portion of the rotating shaft 12 in FIG. 1. The mounting portion 43a has a cylindrical shape surrounding the central axis 11c and is formed so as to protrude downward from the other portions about the central axis 11c. Further, a communication hole 43b is formed in the support portion 43 along the central axis 11c. The communication hole 43b communicates the internal spaces of the plurality of linear paths LP with the space below the disk-shaped member 40.

[0069] When the support portion 43 is attached to the upper end portion of the rotating shaft 12, the central axis 11c coincides with the axis of the rotating shaft 12, and the internal spaces of the plurality of linear paths LP communicate with the internal space of the intake passage vp formed in the rotating shaft 12 through the communication hole 43b.

[0070] As shown in FIG. 4, the annular member 50 has a bottom portion 51 and an outer peripheral wall portion 52. The bottom portion 51 has an annular shape. The inner peripheral end portion of the bottom portion 51 is configured to be connectable to the outer peripheral lower end portion of the support portion 43 of the disk-shaped member 40. The outer peripheral wall portion 52 is formed to extend upward from the outer peripheral end portion of the bottom portion 51 by a certain height. The upper end portion of the outer peripheral wall portion 52 is configured to be connectable to the outer peripheral lower end portion of the adsorption portion 41 of the disk-shaped member 40.

[0071] As shown by the thick solid arrows in Fig. 4, the annular member 50 is attached to the disk-shaped member 40 so as to connect the outer peripheral lower end of the suction portion 41 and the outer peripheral lower end of the support portion 43. When attaching, the connection portion between the disk-shaped member 40 and the annular member 50 is welded. Thereby, an annular space is formed below the peripheral edge of the suction portion 41. This annular space constitutes an annular path RP (Figs. 5 and 6), which is a part of the intake path vp in the suction holding portion 11. The annular path RP surrounds a plurality of linear paths LP in plan view. The end portions of the plurality of linear paths LP on the side opposite to the central axis 11c are open to the space within the annular path RP. Therefore, the internal space of the annular path RP and the internal spaces of the plurality of linear paths LP communicate with each other.

[0072] As shown by the thick dashed circle in Fig. 5, the upper surface 11u of the suction holding portion 11 according to the present embodiment is partitioned into a peripheral region R1 along the outer peripheral end of the suction holding portion 11 and a central region R2 surrounded by the peripheral region R1.

[0073] The peripheral region R1 in this example is an annular region with a certain width from the outer peripheral end of the suction holding portion 11 and overlaps the annular member 50 in plan view. When the diameter of the upper surface 11u is 150 mm, the radial width of the peripheral region R1 is in the range of 5 mm or more and 30 mm or less.

[0074] On the upper surface 11u of the suction holding portion 11, a plurality of suction holes are formed to suck the lower surface of the substrate W over the entire peripheral region R1 and the central region R2. In the following description, among the plurality of suction holes formed on the upper surface 11u of the suction holding portion 11, the suction holes formed in the peripheral region R1 are called suction holes vh1, and the suction holes formed in the central region R2 are called suction holes vh2.

[0075] The plurality of suction holes vh1 are formed on a plurality of linear paths LP in the peripheral region R1, and communicate the space on the upper surface 11u with the internal space of the linear path LP. Further, the plurality of suction holes vh2 are formed on the annular path RP in the central region R2, and communicate the space on the upper surface 11u with the internal space of the annular path RP. Thereby, when the suction device 14 in FIG. 1 operates, the atmosphere on the peripheral region R1 of the suction holding portion 11 is guided to the suction device 14 through the plurality of suction holes vh1, the annular path RP, the plurality of linear paths LP, and the intake path vp of the rotating shaft 12. Also, the atmosphere on the central region R2 of the suction holding portion 11 is guided to the suction device 14 through the plurality of suction holes vh2, the plurality of linear paths LP, and the intake path vp of the rotating shaft 12.

[0076] The plurality of suction holes vh1, vh2 have circular openings having a diameter of, for example, 0.1 mm or more and 0.4 mm or less, and are arranged on virtual concentric circles centered on the central axis 11c. More specifically, the plurality of suction holes vh1 are arranged on four virtual circles centered on the central axis 11c in the peripheral region R1, and the plurality of suction holes vh2 are arranged on five virtual circles centered on the central axis 11c in the central region R2. In FIG. 5, a part of the virtual concentric circle is shown by a two-dot chain line.

[0077] The radii of the virtual circles on which the plurality of suction holes vh1 are arranged in the peripheral region R1 are determined to increase sequentially from the smallest virtual circle at a first pitch pt1, as shown in the blowout in FIG. 5. On the other hand, the radii of the virtual circles on which the plurality of suction holes vh2 are arranged in the central region R2 are determined to increase sequentially from the smallest virtual circle at a second pitch pt2 larger than the first pitch pt1. The first pitch pt1 and the second pitch pt2 are so-called PCD (Pitch Circle diameter) pitches. The first pitch pt1 is, for example, 1 mm or more and 3 mm or less, and the second pitch pt2 is, for example, 5 mm or more and 40 mm or less.

[0078] When manufacturing the suction holding portion 11, in order to form a plurality of suction holes vh1 and vh2, drilling is performed on the suction portion 41 using a drill. In the peripheral region R1, a plurality of suction holes vh1 formed on one of two adjacent virtual circles and a plurality of suction holes vh1 formed on the other virtual circle are arranged in a staggered (zigzag) pattern in the rotational direction centered on the central axis 11c. In this case, compared with the case where the plurality of suction holes vh1 formed on two adjacent virtual circles are arranged side by side in the radial direction of the upper surface 11u, the distance between adjacent suction holes vh1 can be increased. Thereby, the formation of the plurality of suction holes vh1 in the peripheral region R1 becomes easier, and with a simple configuration, the first pitch pt1 can be made sufficiently smaller than the second pitch pt2.

[0079] By the way, if all of the plurality of suction holes vh1 and vh2 are configured to have the same size, the suction force generated by each of the plurality of suction holes vh1 arranged on the largest virtual circle may be significantly larger than the suction force generated by each of the other suction holes vh1 and vh2. In this case, when the substrate W is suction-held by the suction holding portion 11, there is a possibility that the substrate W may be deformed because a part of the substrate W is locally and strongly suctioned. Therefore, in the present embodiment, the size of a part of the suction holes vh1 arranged on the largest virtual circle centered on the central axis 11c is set to be smaller than the size of the other remaining suction holes vh1 and vh2. Specifically, each opening of a part of the suction holes vh1 has a diameter of, for example, 0.1 mm or more and 0.2 mm or less, and each opening of the other remaining suction holes vh1 and vh2 has a diameter of, for example, 0.2 mm or more and 0.4 mm or less. Thereby, deformation of the substrate W caused by a part of the substrate W being locally and strongly suctioned is prevented.

[0080] In the suction holding portion 11 according to the above-described first configuration example, the surface density of the suction holes vh1 in the peripheral region R1 is larger than the surface density of the suction holes vh2 in the central region R2. In this case, when the substrate W is suction-held by the suction holding portion 11, the portion of the substrate W facing the peripheral region R1 is suctioned with a larger suction force than the portion of the substrate W facing the central region R2. Thereby, when the suction-held substrate W rotates, the portion of the substrate W located on the peripheral region R1 is suppressed from lifting from the upper surface 11u of the suction holding portion 11 against the suction force acting on the portion, and the holding state of the substrate W is stabilized.

[0081] Note that the surface density of the suction holes vh1 in the peripheral region R1 can be calculated by dividing the total opening area of the plurality of suction holes vh1 formed in the peripheral region R1 by the area of the peripheral region R1. Further, the surface density of the suction holes vh2 in the central region R2 can be calculated by dividing the total opening area of the plurality of suction holes vh2 formed in the central region R2 by the area of the central region R2.

[0082] In the suction holding portion 11 according to the present embodiment, the plurality of suction holes vh1, vh2 further have the following relationship. The linear density of the plurality of suction holes vh1 distributed and arranged on each virtual circle in the peripheral region R1 is larger than the linear density of the plurality of suction holes vh2 distributed and arranged on any virtual circle in the central region R2. In this case, the plurality of suction holes vh1 are distributed and arranged on each virtual circle in the peripheral region R1, and the plurality of suction holes vh2 are distributed and arranged on each virtual circle in the central region R2, whereby the central portion of the lower surface of the substrate W is more stably suction-held on the suction holding portion 11.

[0083] The number of the plurality of suction holes vh1 arranged on each virtual circle in the peripheral region R1 is larger than the number of the plurality of suction holes vh2 arranged on any virtual circle in the central region R2. In this case, with a simple configuration, the surface density of the suction holes vh1 in the peripheral region R1 can be made larger than the surface density of the suction holes vh2 in the central region R2.

[0084] In the central region R2, the plurality of suction holes vh2 are arranged so as to be aligned on a plurality of linear paths LP. Therefore, the angular pitch between every two adjacent suction holes vh2 on each virtual circle in the central region R2 is the above-described angular pitch β. On the other hand, the angular pitch α between every two adjacent suction holes vh1 on each virtual circle in the peripheral region R1 is smaller than the angular pitch β between every two adjacent suction holes vh2 on any virtual circle in the central region R2. In the present embodiment, the angular pitch α is preferably greater than 0° and 4° or less, and more preferably 1° or more and 3° or less. In this case, with a simple configuration, the surface density of the suction holes vh1 in the peripheral region R1 can be made larger than the surface density of the suction holes vh2 in the central region R2.

[0085] In the suction holding portion 11, it is desirable that the distance (shortest distance) md (FIG. 5) from each of a part of the suction holes vh1 arranged on the largest virtual circle among the plurality of suction holes vh1 to the outer peripheral end portion of the suction holding portion 11 be as small as possible. In the suction holding portion 11 according to the first configuration example, the distance md is 2 mm or more and 4 mm or less. In this case, when the substrate W is suction-held by the suction holding portion 11, the portion of the substrate W facing the vicinity of the outer peripheral end portion of the suction holding portion 11 is suction-held on the upper surface 11u of the suction holding portion 11. Thereby, the central portion of the lower surface of the substrate W is suppressed from lifting from the upper surface 11u of the suction holding portion 11, and the holding state of the substrate W becomes more stable.

[0086] (2) Second configuration example The differences between the suction holding portion 11 according to the second configuration example and the suction holding portion 11 according to the first configuration example will be described. FIG. 7 is an exploded perspective view of the suction holding portion 11 according to the second configuration example. As shown in FIG. 7, the suction holding portion 11 according to the second configuration example mainly includes an upper circular member 60, a lower circular member 70, and a seal member 79.

[0087] The upper circular member 60 is made of, for example, a resin excellent in corrosion resistance, and has a disk-shaped adsorption portion 61 and a cylindrical outer peripheral wall portion 62. The outer peripheral wall portion 62 is formed to extend downward from the outer peripheral end portion of the adsorption portion 61. The adsorption portion 61 includes the upper surface 11u of the adsorption holding portion 11, and is configured to be able to adsorb and hold the central portion of the lower surface of the substrate W. The configuration of the upper surface 11u of the adsorption holding portion 11 in this example is exactly the same as the configuration of the upper surface 11u (FIG. 5) of the adsorption holding portion 11 according to the first configuration example.

[0088] FIG. 8 is a bottom view of the upper circular member 60 in FIG. 7, and FIG. 9 is a longitudinal sectional view of the adsorption holding portion 11 according to the second configuration example. The sectional view of FIG. 9 corresponds to the longitudinal sectional view of FIG. 6 according to the first configuration example. As shown in FIG. 8, also on the lower surface 60b of the upper circular member 60, a peripheral edge region R1 and a central region R2 are defined in the same manner as the upper surface 11u.

[0089] An annular groove portion RG overlapping the peripheral edge region R1 is formed on the lower surface 60b of the upper circular member 60. Further, a plurality of linear groove portions LG overlapping the central region R2 are formed on the lower surface 60b of the upper circular member 60. The plurality of linear groove portions LG extend linearly in the horizontal direction from the central axis 11c toward the outer peripheral wall portion 62, and are formed to be arranged at a constant angular pitch β (FIG. 5) around the central axis 11c.

[0090] Each linear groove portion LG is formed such that the depth gradually decreases from the central axis 11c toward the peripheral edge region R1. The depth of the annular groove portion RG is substantially constant over the entire circumference of the peripheral edge region R1, and is substantially equal to the maximum depth of the plurality of linear groove portions LG. A screw hole 65 is formed in each of the plurality of portions surrounded by the plurality of linear groove portions LG and the annular groove portion RG on the lower surface 60b of the upper circular member 60.

[0091] As shown in FIG. 7, the lower circular member 70 has a disk-shaped support portion 71 and a cylindrical outer peripheral wall portion 72, and is made of, for example, a metal material having high rigidity. A communication hole 73 penetrating in the vertical direction is formed in the central portion of the support portion 71. Further, a plurality of through holes 74 corresponding to the plurality of screw holes 65 (FIG. 8) of the upper circular member 60 are formed in the support portion 71 so as to surround the communication hole 73.

[0092] The outer peripheral wall portion 72 is formed so as to extend upward from the outer peripheral end portion of the support portion 71. The outer diameter of the outer peripheral wall portion 72 is slightly smaller than the inner diameter of the outer peripheral wall portion 62 of the upper circular member 60. A groove 72g extending in the circumferential direction with a constant width is formed on the outer peripheral surface of the outer peripheral wall portion 72. The seal member 79 is an O-ring that can be fitted into the groove 72g of the outer peripheral wall portion 72. As shown by the white arrow in FIG. 7, the seal member 79 is fitted into the groove 72g of the outer peripheral wall portion 72. Further, as shown by the thick solid arrow in FIG. 7, the lower circular member 70 is further fitted into the upper circular member 60. In this state, a plurality of screw members BL (FIG. 9) are attached from below the lower circular member 70 to the plurality of screw holes 65 (FIG. 8) of the upper circular member 60 through the plurality of through holes 74 (FIG. 7) formed in the lower circular member 70. Thereby, as shown in FIG. 9, the upper circular member 60 and the lower circular member 70 are connected.

[0093] In a state where the upper circular member 60 and the lower circular member 70 are connected, a space extending annularly is formed between the annular groove portion RG of the upper circular member 60 and the outer peripheral portion of the lower circular member 70. This space functions as the above-described annular path RP. Further, a space extending linearly is formed between the bottom portions of the plurality of linear groove portions LG of the upper circular member 60 and the support portion 71 of the lower circular member 70. These spaces function as a plurality of linear paths LP.

[0094] Similar to the support portion 43 in FIG. 6, the support portion 71 has a mounting portion 71a that is mounted on the upper end portion of the rotating shaft 12 in FIG. 1. The communication hole 73 is formed inside the mounting portion 71a along the central axis 11c.

[0095] As described above, in the adsorption holding portion 11 according to the second configuration example, each of the plurality of linear groove portions LG formed on the lower surface 60b of the upper circular member 60 is formed such that the depth gradually decreases from the central axis 11c toward the peripheral region R1. Thereby, the cross-sectional area orthogonal to the gas flow direction of each linear path LP gradually decreases from the center to the outer peripheral end of the adsorption holding portion 11. According to this configuration, even when the sizes of the plurality of suction holes vh2 formed so as to overlap each linear path LP are the same, the suction forces generated in the plurality of suction holes vh2 are made uniform. Therefore, the entire central portion of the lower surface of the substrate W is sucked with a substantially uniform force.

[0096] Further, the adsorption holding portion 11 according to the second configuration example has a configuration in which the upper circular member 60 and the lower circular member 70 are connected by a plurality of screw members BL. Thereby, the maintenance of the inside of the adsorption holding portion 11 can be easily performed.

[0097] [3] Consideration and Effects (1) First Consideration by the Present Inventors FIG. 10 is a plan view of the adsorption holding portion according to the reference form, and FIG. 11 is a longitudinal sectional view taken along line B-B of the adsorption holding portion of FIG. 10. As shown in FIGS. 10 and 11, the adsorption holding portion 99 according to this reference form basically has the same configuration as the adsorption holding portion 11 according to the first configuration example, except that the annular path RP and the plurality of suction holes vh2 are not formed.

[0098] Specifically, the adsorption and holding part 99 according to this reference embodiment has a flat upper surface 99u that adsorbs and holds the central part of the lower surface of the substrate W, and is configured to be attachable to the rotation shaft 12 in FIG. 1. Here, a virtual axis that extends in the vertical direction from the outer peripheral end to the center of the adsorption and holding part 99 is called the central axis 99c. Inside the adsorption and holding part 99, a plurality of linear paths LP that linearly extend in the horizontal direction from the central axis 99c toward the outer peripheral end of the adsorption and holding part 99 are formed at a constant angular pitch (in this example, 30°) around the central axis 99c. The ends of the plurality of linear paths LP on the side opposite to the central axis 99c are blocked. On the upper surface 99u of the adsorption and holding part 99, a plurality of suction holes vh are formed at regular intervals so as to overlap with each linear path LP in a plan view.

[0099] The inventors used a coating apparatus including the adsorption and holding part 99 according to this reference embodiment to perform a coating process on a substrate W having a thickness of 100 μm or less. As a result, coating unevenness that could be visually confirmed occurred on the substrate W after the coating process. The coating unevenness confirmed here is called the first coating unevenness.

[0100] FIG. 12 is a plan view showing an example of the first coating unevenness generated on the substrate W after the coating process using the adsorption and holding part 99 according to the reference embodiment. In FIG. 12, a portion of the substrate W that overlaps with the outer peripheral end of the adsorption and holding part 99 during the coating process (hereinafter referred to as the outer edge of the held area) is indicated by a dotted line. As shown by the dot pattern in FIG. 12, the first coating unevenness is formed such that a plurality of curves extend a certain distance while curving in a common rotation direction with the center of the substrate W as the rotation center from a plurality of portions of the outer edge of the held area toward the outer peripheral end of the substrate W.

[0101] The inventors have presumed the following first and second mechanisms as the mechanism for the occurrence of the first coating unevenness. FIG. 13 is a cross-sectional view for explaining the first mechanism presumed for the occurrence of the first coating unevenness in FIG. 12. When the substrate W adsorbed and held by the adsorption holding portion 99 rotates at high speed, as shown by the thick dashed arrow in the upper part of FIG. 12, a phenomenon occurs in which the outer peripheral portion of the substrate W rises above the upper surface 99u of the adsorption holding portion 99. This phenomenon is likely to occur when rotating the substrate W having a small thickness (a thickness of 100 μm or less in this example). This is because the rigidity of the substrate W is low.

[0102] When the upward force of the outer peripheral portion of the substrate W exceeds the suction force generated by the suction holes vh formed in the vicinity of the outer peripheral end portion of the adsorption holding portion 99, a gap is formed between the outer edge of the held area of the substrate W and the upper surface 99u of the adsorption holding portion 99. In this case, as shown by the thick solid arrow in the upper part of FIG. 13, the atmosphere around the substrate W enters the suction holes vh in the vicinity of the outer peripheral end portion of the adsorption holding portion 99 through the gap between the substrate W and the upper surface 99u of the adsorption holding portion 99. Thereby, due to the local flow of gas in the vicinity of the outer peripheral end portion of the adsorption holding portion 99, the outer edge of the held area of the substrate W is locally cooled.

[0103] On the other hand, when the coating process is started, the resist liquid RL supplied from the liquid nozzle 21 to the central portion of the substrate W spreads toward the outer peripheral end portion of the substrate W as shown by the white arrow in the upper part of FIG. 13. At this time, when the temperature of the outer edge of the held area of the substrate W locally decreases, the resist liquid RL spread on the substrate W is locally cooled. The fluidity of the resist liquid RL on the substrate W is higher as the temperature of the resist liquid RL is higher, and lower as the temperature of the resist liquid RL is lower. Therefore, on the substrate W, the fluidity of the resist liquid RL locally decreases on the outer peripheral end portion of the adsorption holding portion 99. Thereby, in a plurality of portions of the outer edge of the held area of the substrate W, as shown in the lower part of FIG. 13, the resist liquid RL stays.

[0104] When a certain amount of resist liquid RL stays at the outer edge of the held area of the substrate W, the subsequent resist liquid RL flowing further over the stayed resist liquid RL is less likely to be affected by the local temperature drop of the substrate W. As a result, the subsequent resist liquid RL overrides the resist liquid RL that has stayed in a certain amount at the outer edge of the held area of the substrate W and further flows toward the outer peripheral end of the substrate W. At this time, the above-described first coating unevenness occurs.

[0105] FIG. 14 is a cross-sectional view for explaining a second mechanism estimated for the occurrence of the first coating unevenness in FIG. 12. In FIG. 14, the state of the substrate W rotating at two different speeds by the adsorption holding portion 99 in FIG. 10 is shown in an external perspective view. Further, in FIG. 14, the substrate W held on the adsorption holding portion 99 is shown by a one-dot chain line and a dot pattern, and the upper surface 99u of the adsorption holding portion 99 is shown in a state of passing through the substrate W.

[0106] As shown in the upper part of FIG. 14, when the rotation speed of the substrate W is relatively low, the substrate W adsorbed and held by the adsorption holding portion 99 is maintained in a relatively flat state along the upper surface 99u of the adsorption holding portion 99. However, when the rotation speed of the substrate W is relatively high, an upward force is generated on the entire substrate W. As a result, as shown in the lower part of FIG. 14, the portion of the substrate W not sucked by the plurality of suction holes vh is deformed so as to float from the upper surface 99u.

[0107] Here, the plurality of suction holes vh of the adsorption holding portion 99 overlap with the plurality of linear paths LP in FIG. 10. Therefore, the substrate W is deformed so as to undulate in the circumferential direction. In FIG. 14, a virtual line on the upper surface 99u overlapping with the plurality of linear paths LP in FIG. 10 is shown by a two-dot chain line.

[0108] During the coating process of the substrate W by the suction holding portion 99, the rotation speed of the substrate W changes in multiple stages. When the rotation speed of the substrate W changes significantly in a short period of time, a large inertial force is generated between the portion of the substrate W adsorbed and held by the plurality of suction holes vh of the suction holding portion 99 and the portion of the substrate W that deforms in a wavy manner outside the suction holding portion 99. At this time, an annular twist occurs in a part of the substrate W at a position outside the suction holding portion 99. As a result, the first coating unevenness occurs due to the twist.

[0109] The first coating unevenness is presumed to occur according to either one of the above-described first and second mechanisms. Considering the above-described first and second mechanisms, the inventors considered that if the outer edge of the held area of the substrate W does not lift off from the upper surface 99u of the suction holding portion 99 during the coating process, the holding state of the substrate W by the suction holding portion 99 is stable and the first coating unevenness does not occur. Further, the inventors considered that in the configuration of the suction holding portion 99 according to the reference embodiment, a suction force capable of suppressing the outer edge of the held area of the substrate W from lifting off from the upper surface 99u of the suction holding portion 99 cannot be obtained. Considering these points, the inventors devised the suction holding portion 11 according to the above-described first and second configuration examples.

[0110] (2) Second study by the inventors The inventors performed a coating process on a substrate W having a thickness of 100 μm or less using a coating apparatus having the same configuration as the coating apparatus 1 in FIG. 1 except that the gas nozzle 17 and the gas supply system 18 are not provided. As a result, coating unevenness that can be visually confirmed occurred on the substrate W after the coating process. The coating unevenness confirmed here is referred to as the second coating unevenness.

[0111] FIG. 15 is a plan view showing an example of the second coating unevenness generated on the substrate W after the coating process. Also in FIG. 15, similar to the example of FIG. 12, the outer edge of the held area is indicated by a dotted line. As shown by the dot pattern in FIG. 15, the second coating unevenness is formed so as to exhibit an annular shape with a certain width surrounding the center of the substrate W. The inner edge of the second coating unevenness is located at the outer edge of the held area.

[0112] The inventors of the present invention have estimated the mechanism of the occurrence of the second coating unevenness. FIG. 16 is a cross-sectional view for explaining the estimated mechanism of the occurrence of the second coating unevenness in FIG. 15.

[0113] The coating apparatus is basically housed in a clean room. In the space surrounding the coating apparatus, a downward flow (downflow) of clean air maintained at a predetermined temperature (for example, 23° C.) is formed. Thereby, as indicated by the white arrow in the upper part of FIG. 16, gas is continuously blown onto the substrate W during the coating process from above the coating apparatus.

[0114] On the other hand, the resist liquid RL supplied from the liquid nozzle 21 to the substrate W when the coating process is started spreads from the center of the substrate W toward the outer peripheral end. The resist liquid RL in this example contains a volatile solvent. In this case, as indicated by the thick wavy arrow in the upper part of FIG. 16, the solvent of the resist liquid RL spread on the substrate W vaporizes. At this time, the downflow from the position above the coating apparatus toward the substrate W promotes the vaporization of the solvent of the resist liquid RL applied on the substrate W.

[0115] Here, the heat capacity of the portion of the substrate W that does not contact the adsorption holding portion 11 (hereinafter referred to as the non-contact portion nc) is smaller than the heat capacity of the other portions (hereinafter referred to as the contact portions). Therefore, when the vaporization of the solvent of the resist liquid RL on the substrate W is promoted, due to the influence of the heat of vaporization, the temperature of the non-contact portion nc decreases compared to the contact portions.

[0116] The resist liquid RL takes a longer time to cure as the temperature is lower. Therefore, the resist liquid RL spread on the non-contact portion nc is in a state where it is relatively easy to flow due to the rotation of the substrate W. However, in reality, even in the non-contact portion nc, in the outer peripheral end of the substrate W and the region in the vicinity thereof, the vaporization of the solvent of the resist liquid RL is further promoted due to the high rotation speed, and the resist liquid RL is likely to cure. Therefore, finally, as shown in the lower part of FIG. 16, a resist film RC is formed with a substantially constant thickness except for a range of a certain width from the outer edge of the held area of the substrate W. As a result, the above-described second coating unevenness occurs.

[0117] Taking into account the mechanism estimated as described above, the inventors considered adjusting the temperature of each part of the substrate W so that the temperature of the portion not adsorbed and held by the adsorption holding portion 11 matches or approaches the temperature of the portion adsorbed and held by the adsorption holding portion 11 during the coating process. Considering these points, the inventors devised the coating apparatus 1 of FIG. 1 including the gas nozzle 17 for heating the non-contact portion of the substrate W and the gas supply system 18.

[0118] (3) Effects In the above coating apparatus 1, the adsorption holding portions 11 according to the first and second configuration examples are used for the rotation holding device 10. According to the above adsorption holding portion 11, the central portion of the lower surface of the substrate W is suppressed from rising from the upper surface 11u, and the holding state of the substrate W is stabilized. Therefore, when a process is performed on the substrate W rotated by the above rotation holding device 10, variations in the process of the substrate W due to a part of the substrate W rising from the upper surface 11u of the adsorption holding portion 11 are prevented at a plurality of portions on the substrate W. As a result, the occurrence of the first coating unevenness is suppressed, and uniform processing over the entire substrate W becomes possible.

[0119] In the above coating apparatus 1, the gas nozzle 17 and the gas supply system 18 for adjusting the temperature of the non-contact portion of the substrate W are provided in the rotation holding device 10. Thereby, during the coating process of the substrate W, the temperature of the non-contact portion of the substrate W is made to match or approach the temperature of the contact portion. In this case, the occurrence of a temperature difference between a plurality of portions of the substrate W during the coating process is suppressed. As a result, the occurrence of the second coating unevenness is suppressed, and uniform processing over the entire substrate W becomes possible.

[0120] Also, in the present embodiment, the temperature of the non-contact portion nc of the substrate W is adjusted by the temperature adjustment gas jetted from the gas nozzle 17 to the substrate W. In this case, in order to adjust the temperature of the non-contact portion nc of the substrate W, it is not necessary to provide a heating device such as a heater or an ultraviolet lamp in the vicinity of the adsorption holding portion 11. Thereby, the processing environment of the substrate W is not affected by excessive heat.

[0121] [4] First test to confirm uneven coating The present inventors conducted the following confirmation test to confirm the effect of the above-mentioned suction holding unit 11. First, the present inventors fabricated an suction holding unit having basically the same configuration as the suction holding unit 11 in Fig. 4 to Fig. 6 as an example of the suction holding unit. The present inventors also fabricated an suction holding unit having basically the same configuration as the suction holding unit 99 in Fig. 10 according to the reference embodiment as an suction holding unit of a comparative example.

[0122] Furthermore, the inventors attached the fabricated suction holding unit of the example to the coating apparatus 1 of Fig. 1 and performed a coating process on the substrate W. The inventors also attached the fabricated suction holding unit of the comparative example to the coating apparatus 1 of Fig. 1 and performed a coating process on the substrate W.

[0123] Thereafter, the substrate W after the coating process using the suction holding unit of the embodiment was taken as the embodiment substrate, and the substrate W after the coating process using the suction holding unit of the comparative example was taken as the comparative example substrate, and the upper surface of each substrate was visually confirmed. As a result, the above-mentioned first coating unevenness was not confirmed on the embodiment substrate. On the other hand, the above-mentioned first coating unevenness occurred on the comparative example substrate. Based on this visual result, in order to confirm the state of the film on the substrate W in more detail, the film thickness of the resist film was measured on multiple parts of each substrate W.

[0124] FIG. 17 is a plan view for explaining a portion of the substrate W that is the subject of film thickness measurement in the first coating unevenness confirmation test. In FIG. 17, the outer edge of the held area is indicated by a dotted line. As shown in FIG. 17, the inventors determined a plurality of portions arranged at a pitch of 1.6° on a first circle C1 that almost overlaps with the outer edge of the held area as a first measurement target portion group. The inventors also determined a plurality of portions arranged at a pitch of 1.6° on a second circle C2 that is concentric with the first circle C1 and has a radius smaller than that of the first circle C1 as a second measurement target portion group. The inventors also determined a plurality of portions arranged at a pitch of 1.6° on a third circle C3 that is concentric with the first circle C1 and has a radius larger than that of the first circle C1 as a third measurement target portion group.

[0125] In FIG. 17, in each of the first to third circles C1 to C3, a part of a plurality of measurement target portions arranged at a pitch of 1.6° is indicated by small black dots. In FIG. 17, the angular pitch between a plurality of measurement points on the same circle is exaggeratedly shown so that the relationship between the plurality of measurement portions can be easily understood.

[0126] FIG. 18 is a diagram showing the results of a confirmation test for the first coating unevenness. In FIG. 18, the film thickness measurement results of the example substrate and the comparative example substrate are shown for each of the first to third measurement target portion groups. In each graph shown in FIG. 18, the vertical axis represents the film thickness, and the horizontal axis represents the measurement portions (measurement positions) in each of the first to third circles C1 to C3 in FIG. 17. Further, in each graph, the symbol “tt” shown on the vertical axis represents the thickness of the resist film to be formed by the coating process, that is, the target film thickness. Furthermore, in each graph, the line connecting the plurality of film thickness measurement results of the example substrate is represented by a thick solid line, and the line connecting the plurality of film thickness measurement results of the comparative example substrate is represented by a dotted line.

[0127] As shown in FIG. 18, the film thickness measurement results of the example substrate have less variation in film thickness than the film thickness measurement results of the comparative example substrate in any of the first to third measurement target portion groups. Also, the film thickness measurement results of the example substrate are closer to the target film thickness tt as a whole than the film thickness measurement results of the comparative example substrate in any of the first to third measurement target portion groups. According to the film thickness measurement results of the first and third measurement target portion groups, in the comparative example substrate, particularly significant variation in film thickness is observed in the range from the outer edge of the held area to the outer peripheral end of the substrate. This significant variation in film thickness corresponds to the first coating unevenness.

[0128] As a result of these, it has become clear that by using the adsorption holding portions 11 according to the above-described first and second configuration examples instead of the adsorption holding portion 99 in FIG. 10, the occurrence of the first coating unevenness is sufficiently suppressed.

[0129] [5] Confirmation test for the second coating unevenness (1) Regarding the temperature of the substrate W during the coating process In order to confirm how the temperature state of the substrate W differs between the case where the temperature-adjusting gas is supplied from the gas nozzle 17 of FIG. 1 to the substrate W during the coating process of the substrate W and the case where the temperature-adjusting gas is not supplied, the inventors conducted a temperature-adjustment confirmation test described below.

[0130] FIG. 19 is a schematic cross-sectional view of the coating apparatus 1 for explaining the temperature-adjustment confirmation test. As shown in FIG. 19, the inventors set a non-contact type first temperature sensor s1 on the coating apparatus 1 such that the temperature measurement point is located at the portion of the substrate W positioned on the adsorption holding portion 11. Further, the inventors set a non-contact type second temperature sensor s2 on the coating apparatus 1 such that the temperature measurement point is located at the portion of the substrate W positioned on the gas nozzle 17.

[0131] In this state, the outputs (temperature measurement results) of the first and second temperature sensors s1 and s2 were recorded when the coating process of the substrate W was performed while the heated temperature-adjusting gas was being supplied from the gas nozzle 17 to the substrate W. Also, the outputs (temperature measurement results) of the first and second temperature sensors s1 and s2 were recorded when the coating process was performed with no temperature-adjusting gas being supplied from the gas nozzle 17 to the substrate W.

[0132] FIG. 20 is a diagram showing the temperature-adjustment confirmation test results. In the graph of FIG. 20, the vertical axis represents temperature and the horizontal axis represents time. On the horizontal axis of FIG. 20, the time point t1 represents the time point when the supply of the resist solution RL to the substrate W was stopped after the coating process was started. The time point t2 represents the end point of the coating process, that is, the time point when the entire resist solution RL spread on the substrate W was cured. Also, the symbol "pt" shown on the vertical axis of FIG. 20 represents the processing temperature.

[0133] Furthermore, in the graph of FIG. 20, when the coating process of the substrate W is performed while the temperature-adjusted gas heated from the gas nozzle 17 is supplied to the substrate W, the outputs (temperature measurement results) of the first and second temperature sensors s1 and s2 are indicated by the thick solid line and the thick dashed-dotted line. Furthermore, in the graph of FIG. 20, when the coating process of the substrate W is performed in a state where the temperature-adjusted gas is not supplied from the gas nozzle 17 to the substrate W, the outputs (temperature measurement results) of the first and second temperature sensors s1 and s2 are indicated by the dotted line and the dashed-two-dotted line.

[0134] According to the temperature adjustment confirmation test results in FIG. 20, when the temperature-adjusted gas heated from the gas nozzle 17 is supplied to the substrate W, the variation in the outputs of the temperature sensors s1 and s2 is slightly smaller than when the temperature-adjusted gas is not supplied from the gas nozzle 17 to the substrate W. Also, when the temperature-adjusted gas heated from the gas nozzle 17 is supplied to the substrate W, the outputs of the temperature sensors s1 and s2 are slightly closer to the processing temperature pt than when the temperature-adjusted gas is not supplied from the gas nozzle 17 to the substrate W. From these results, it was confirmed that supplying the temperature-adjusted gas heated from the gas nozzle 17 in FIG. 1 to the substrate W suppresses the occurrence of a large temperature difference between a plurality of portions of the substrate W during the coating process. Also, it was confirmed that supplying the temperature-adjusted gas heated from the gas nozzle 17 in FIG. 1 to the substrate W causes the temperature of the substrate W during the coating process to approach the processing temperature pt as a whole.

[0135] (2) Occurrence state of the second coating unevenness The inventors of the present invention performed the coating process of a plurality of substrates W while changing the supply mode of the temperature-adjusted gas from the gas nozzle 17 to the substrate W in the coating apparatus 1 of FIG. 1, and confirmed the occurrence state of the second coating unevenness according to the supply mode of the temperature-adjusted gas from the gas nozzle 17 to the substrate W.

[0136] Specifically, for the first substrate W out of the four substrates W, the present inventors performed a coating process without supplying a temperature-adjusting gas from the gas nozzle 17 to the substrate W. Further, for the second substrate W out of the four substrates W, the present inventors performed a coating process while supplying a temperature-adjusting gas at a first temperature from the gas nozzle 17 to the substrate W. Further, for the third substrate W out of the four substrates W, the present inventors performed a coating process while supplying a temperature-adjusting gas at a second temperature from the gas nozzle 17 to the substrate W. Further, for the fourth substrate W out of the four substrates W, the present inventors performed a coating process while supplying a temperature-adjusting gas at a third temperature from the gas nozzle 17 to the substrate W. The above first to third temperatures are higher than the processing temperature pt. Further, the second temperature is higher than the first temperature, and the third temperature is higher than the second temperature.

[0137] Thereafter, the present inventors measured the film thickness distribution of the resist film on the straight line passing through the center of each substrate W for the four substrates W after the coating process obtained as described above. FIG. 21 is a diagram showing the film thickness distribution of the resist film on the four substrates W on which the coating process was performed in a state where the supply modes of the temperature-adjusting gas from the gas nozzle 17 to the substrate W are different from each other.

[0138] In FIG. 21, the vertical axis represents the film thickness of the resist film, and the horizontal axis represents the position on the straight line passing through the center of the substrate W. In the horizontal axis, "0" represents the center of the substrate W. Further, "150" represents one end of the straight line passing through the center of the substrate W on the surface of the substrate W, and "-150" represents the other end of the straight line passing through the center of the substrate W on the surface of the substrate W. Further, in this example, the positions of "75" and "-75" on the horizontal axis represent the positions of the outer edges of the held region.

[0139] Furthermore, in FIG. 21, the dotted line indicates the film thickness distribution corresponding to the first substrate W described above, and the solid line indicates the film thickness distribution corresponding to the second substrate W described above. Also, the one-dot chain line indicates the film thickness distribution corresponding to the third substrate W described above, and the two-dot chain line indicates the film thickness distribution corresponding to the fourth substrate W described above.

[0140] 21, the first substrate W to which the heated temperature adjusting gas was not supplied during the coating process has a locally small film thickness at and near the outer edge of the held area. This indicates that the second coating unevenness is prominent in the first substrate W.

[0141] On the other hand, no significant decrease in film thickness was observed at or near the outer edge of the held area for the second, third and fourth substrates W. This shows that the occurrence of the second coating unevenness was suppressed.

[0142] 21, the thickness of the resist film at the outer edge of the held area and its neighboring positions increases as the temperature of the temperature adjusting gas supplied to the substrate W from the gas nozzle 17 increases. Therefore, it is desirable to adjust the temperature of the temperature adjusting gas supplied to the substrate W during the coating process so that the thickness of the resist film at the outer edge of the held area and its neighboring positions becomes closer to the thickness of the resist film at other positions.

[0143] 2. Second embodiment [1] Basic configuration of the coating apparatus according to the second embodiment The coating apparatus according to the second embodiment will be described with respect to differences from the coating apparatus according to the first embodiment. Fig. 22 is a schematic cross-sectional view showing a basic configuration example of a coating apparatus according to the second embodiment, and Fig. 23 is a schematic plan view of the coating apparatus 1 of Fig. 22. In Fig. 23, some of the components of the coating apparatus 1 shown in Fig. 22 are omitted. Also, the substrate W shown in Fig. 22 is indicated by a dashed line.

[0144] In the following description, as in the first embodiment, the portion of the underside of the substrate W that contacts the suction holding portion 11 (the portion that is suction-held by the suction holding portion 11) is referred to as the underside central portion. Furthermore, in this embodiment, the portion of the underside of the substrate W that surrounds the underside central portion and is not suction-held by the suction holding portion 11 is referred to as the underside peripheral portion.

[0145] As shown in FIGS. 22 and 23, in the coating apparatus 1 according to the present embodiment, the rotation holding device 10 includes a plurality (four in this example) of gas nozzles 17. As shown in FIG. 23, the plurality of gas nozzles 17 are provided at equal angular intervals (90° intervals with respect to the rotation axis 12 in this example) so as to be arranged in the circumferential direction of the substrate W adsorbed and held by the adsorption holding portion 11. Further, each of the plurality of gas nozzles 17 is arranged such that the slit-shaped opening of the gas ejection portion 17b (FIG. 23) extends in the diameter direction of the substrate W adsorbed and held by the adsorption holding portion 11. A gas supply system 18 is connected to the gas introduction portion 17a (FIG. 3) of each gas nozzle 17.

[0146] In this coating apparatus 1, the gas supply system 18 supplies a temperature-adjusted gas having a temperature higher than, for example, the processing temperature to the plurality of gas nozzles 17 during the coating process. In this case, the temperature-adjusted gas having a high temperature is simultaneously ejected from the gas ejection portions 17b of the plurality of gas nozzles 17 to a plurality of portions on the lower surface peripheral edge of the substrate W being processed. Thereby, without excessively increasing the flow rate of the temperature-adjusted gas supplied to each of the plurality of portions on the lower surface peripheral edge of the substrate W, the temperature of the central portion of the lower surface of the substrate W and the temperature of the lower surface peripheral edge of the substrate W can be made to coincide with each other or brought closer to each other. As a result, deformation and breakage of the substrate W due to the supply of the temperature-adjusted gas at an excessive flow rate to a part of the substrate W are prevented.

[0147] [2] Modification Example of Gas Nozzle 17 In the rotation holding device 10 according to the present embodiment, the configuration of the gas nozzle 17 that supplies the temperature-adjusted gas to the lower surface peripheral edge of the substrate W is not limited to the example of FIG. 22. Hereinafter, a modification example of the gas nozzle 17 will be described.

[0148] (1) First Modification Example FIG. 24 is an external perspective view of a gas nozzle according to the first modification example, FIG. 25 is a plan view of the gas nozzle 170A in FIG. 24, and FIG. 26 is a bottom view of the gas nozzle 170A in FIG. 24. As shown in FIGS. 24 to 26, the gas nozzle 170A in this example has an annular shape and is configured such that the adsorption holding portion 11 can be arranged inside thereof.

[0149] As shown in FIGS. 24 and 25, the upper surface 170u of the gas nozzle 170A has an annular belt shape with a flat and constant width. A plurality of through-hole groups g1 to g8 are formed on the upper surface 170u at predetermined intervals in the circumferential direction. In other words, a plurality of (in this example, eight) through-hole groups g1 to g8 are formed on the upper surface 170u at equal angular (in this example, 45°) intervals with respect to the center of the gas nozzle 170A in a plan view. Each of the through-hole groups g1 to g8 includes a plurality of through-holes h1 to hn (n is a natural number of 2 or more). The plurality of through-holes h1 to hn have a common inner diameter of, for example, 0.5 mm or more and 5.00 mm or less.

[0150] In each of the through-hole groups g1 to g8, the plurality of through-holes h1 to hn are arranged in a line from the inner edge to the outer edge of the gas nozzle 170A in this order. The gas nozzle 170A has an annular internal space 173 (FIG. 28) described later. The plurality of through-holes h1 to hn communicate the internal space 173 with the space above the upper surface 170u.

[0151] As shown in FIG. 26, the lower surface 170b of the gas nozzle 170A has an annular belt shape with a flat and constant width, similar to the upper surface 170u. A plurality of gas introduction members 177 are provided on the lower surface 170b at predetermined intervals in the circumferential direction. In other words, a plurality of (in this example, eight) gas introduction members 177 are provided on the lower surface 170b at equal angular (in this example, 45°) intervals with respect to the center of the gas nozzle 170A in a plan view. Each gas introduction member 177 is provided at a position that does not overlap any of the through-hole groups g1 to g8 in a plan view. More specifically, each gas introduction member 177 is provided on the lower surface 170b so as to be located in the middle of each two adjacent through-hole groups among the through-hole groups g1 to g8 in a plan view.

[0152] The gas introduction member 177 has a gas inlet 177a, a gas flow path 177b, and a gas outlet 177c. A through-hole is formed at the attachment portion of each gas introduction member 177 on the lower surface 170b. The gas outlet 177c of the gas introduction member 177 is positioned above the through-hole on the lower surface 170b.

[0153] With such a configuration, when the temperature-adjusted gas is supplied to the gas inlet 177a, the temperature-adjusted gas is guided into the internal space 173 (FIG. 28) of the gas nozzle 170A through the gas flow path 177b, the gas outlet 177c, and the through holes in the lower surface 170b. The temperature-adjusted gas guided into the internal space 173 (FIG. 28) is further jetted from the plurality of groups of through holes g1 to g8 in the upper surface 170u into the space above the upper surface 170u. Therefore, when the gas nozzle 170A is provided in the coating apparatus 1, the gas supply system 18 (FIG. 22) is connected to the gas inlets 177a of the plurality of gas introduction members 177.

[0154] Further, two fixing members 178 are attached to the lower surface 170b of the gas nozzle 170A. The fixing member 178 has, for example, a through hole into which a screw can be inserted, and is provided so as to project from above the lower surface 170b into the inside of the gas nozzle 170A. The two fixing members 178 are fixed to the housing of the coating apparatus 1 using screws, for example. Thereby, the gas nozzle 170A is fixed in the coating apparatus 1 in a state having a predetermined positional relationship with respect to the adsorption holding portion 11.

[0155] Note that the number of the fixing members 178 provided on the gas nozzle 170A is not limited to two. The gas nozzle 170A may be provided with three, four, or five or more fixing members 178. In this case, the plurality of fixing members 178 are preferably arranged at equal intervals on the lower surface 170b.

[0156] FIG. 27 is a diagram showing the positional relationship between the gas nozzle 170A and the adsorption holding portion 11 according to the first modification of the coating apparatus 1. As shown in FIG. 27, in the coating apparatus 1, the gas nozzle 170A is provided so as to surround the adsorption holding portion 11. Note that the upper surface 170u of the gas nozzle 170A is held at a height lower than the upper surface 11u of the adsorption holding portion 11.

[0157] Figure 28 is a longitudinal sectional view of a plurality of parts of the suction holding part 11 and the gas nozzle 170A in Figure 27. In the first row of Figure 28, a longitudinal sectional view is shown when the suction holding part 11 and the gas nozzle 170A are cut along the vertical plane including the line Q1-Q1 in Figure 27. In the vertical plane including the line Q1-Q1, there is the through-hole group g1 in Figure 24. In the second row of Figure 28, a longitudinal sectional view is shown when the suction holding part 11 and the gas nozzle 170A are cut along the vertical plane including the line Q2-Q2 in Figure 27. In the vertical plane including the line Q2-Q2, there is the through-hole group g2 in Figure 24.

[0158] In the third row of Figure 28, a longitudinal sectional view is shown when the suction holding part 11 and the gas nozzle 170A are cut along the vertical plane including the line Q3-Q3 in Figure 27. In the vertical plane including the line Q3-Q3, there is the through-hole group g3 in Figure 24. In the fourth row of Figure 28, a longitudinal sectional view is shown when the suction holding part 11 and the gas nozzle 170A are cut along the vertical plane including the line Q4-Q4 in Figure 27. In the vertical plane including the line Q4-Q4, there is the through-hole group g4 in Figure 24.

[0159] In the fifth row of Figure 28, a longitudinal sectional view is shown when the suction holding part 11 and the gas nozzle 170A are cut along the vertical plane including the line Q5-Q5 in Figure 27. In the vertical plane including the line Q5-Q5, there is the gas introduction member 177 in Figure 24. In each figure of Figure 28, together with the sectional views of the suction holding part 11 and the gas nozzle 170A, a sectional view of the substrate W suction-held by the suction holding part 11 is also shown.

[0160] As shown in the longitudinal sectional views of each row of Figure 28, the gas nozzle 170A is composed of an upper surface member 171 and a lower surface member 172. The upper surface member 171 has an annular flat plate portion forming the upper surface 170u, an inner peripheral wall extending downward by a predetermined height from the inner edge of the flat plate portion, and an outer peripheral wall extending downward by a predetermined height from the outer edge of the flat plate portion. On the other hand, the lower surface member 172 is a flat plate member having an annular shape corresponding to the flat plate portion of the upper surface member 171.

[0161] The inner edge and the outer edge of the lower member 172 are respectively connected to the lower end portion of the inner peripheral wall and the lower end portion of the outer peripheral wall of the upper member 171. Thereby, an annular internal space 173 is formed between the flat plate portion of the upper member 171 and the lower member 172. The internal space 173 functions as a flow path for the temperature-adjusting gas. The connection between the upper member 171 and the lower member 172 may be performed by welding. Alternatively, the upper member 171 and the lower member 172 may be connected to each other using, for example, screws. In this case, it is preferable to provide a sealing member such as an O-ring at the connection portion between the upper member 171 and the lower member 172 so that the gas in the internal space 173 does not leak through the connection portion between the upper member 171 and the lower member 172.

[0162] In the first-stage longitudinal section of FIG. 28, a plurality of through-holes h1 to hn belonging to the through-hole group g1 of FIG. 24 are formed in the upper surface 170u of the gas nozzle 170A. In the second-stage longitudinal section, a plurality of through-holes h1 to hn belonging to the through-hole group g2 of FIG. 24 are formed in the upper surface 170u of the gas nozzle 170A. In the third-stage longitudinal section, a plurality of through-holes h1 to hn belonging to the through-hole group g3 of FIG. 24 are formed in the upper surface 170u of the gas nozzle 170A. In the fourth-stage longitudinal section, a plurality of through-holes h1 to hn belonging to the through-hole group g3 of FIG. 24 are formed in the upper surface 170u of the gas nozzle 170A.

[0163] An inclined portion ut that faces inward and upward of the gas nozzle 170A is formed in the portion of the upper surface 170u that is closest to the adsorption holding portion 11. The inclination angle of the inclined portion ut with respect to the axis extending in the vertical direction is set to be within the range of, for example, 30° to 60°. In each of the through-hole groups g1 to g8 in FIG. 24, the through-hole h1 closest to the inner edge of the gas nozzle 170A is located at the inclined portion ut. Each through-hole h1 is formed to extend in a direction orthogonal to the inclined portion ut.

[0164] In the longitudinal sectional view of the gas nozzle 170A, the inclined portion ut extends linearly for a certain length outward and obliquely upward from the inner edge of the gas nozzle 170A. Further, the inclined portion ut faces a portion including the inner edge among the lower surface peripheral portions of the substrate W in a state where the substrate W is adsorbed and held by the adsorption holding portion 11.

[0165] In the gas nozzle 170A, the through holes h1 of the through hole groups g1, g4, g7 among the plurality of through hole groups g1 to g8 are formed in a first region near the upper end portion of the inclined portion ut. On the other hand, the through holes h1 of the through hole groups g2, g5, g8 are formed in a second region adjacent to the first region and located below the first region of the inclined portion ut. On the other hand, the through holes h1 of the through hole groups g3, g6 are formed in a third region adjacent to the second region and located below the second region of the inclined portion ut.

[0166] As described above, the plurality of through holes h1 are formed dispersedly in a plurality of regions in the inclined portion ut. Thereby, when the substrate W adsorbed and held by the adsorption holding portion 11 rotates, the temperature adjustment gas jetted from the plurality of through holes h1 is supplied as a whole to the inner edge of the lower surface peripheral portion of the substrate W and the peripheral portion thereof.

[0167] Here, in the gas nozzle 170A, the direction facing outward from the center of the gas nozzle 170A orthogonally to the circumferential direction is called the radial direction. In each of the through hole groups g1 to g8 in FIG. 24, the through holes h2 to hn are arranged at a constant interval (the inner diameter of the through holes h2 to hn in this example) on a straight line extending along the radial direction on a region of the upper surface 170u excluding the inclined portion ut. Specifically, each of the through holes h1 to hn in this example has an inner diameter of 1.0 mm, and the through holes h2 to hn are arranged on a straight line at a pitch of 2.0 mm.

[0168] In each pair of through-hole groups that are adjacent to each other in the circumferential direction of the gas nozzle 170A, the formation positions of the through-holes h2 to hn in one through-hole group are different from the formation positions of the through-holes h2 to hn in the other through-hole group. As a result, in the gas nozzle 170A, the through-holes corresponding to each other in the plurality of through-hole groups g1 to g8 are arranged in a staggered pattern (zigzag pattern) in the circumferential direction. Thereby, when the substrate W adsorbed and held by the adsorption holding portion 11 rotates, the temperature adjustment gas jetted from the plurality of through-holes h2 to hn in the plurality of through-hole groups g1 to g8 is entirely supplied to the portion of the lower surface peripheral edge of the substrate W that faces the upper surface 170u.

[0169] As shown in the fifth row of FIG. 28, a through-hole 172h is formed at a substantially central portion in the radial direction at the attachment portion of the gas introduction member 177 on the lower surface 170b of the gas nozzle 170A. The gas introduction member 177 is positioned such that the gas outlet 177c overlaps the through-hole 172h and is attached to the lower surface 170b. In this state, the gas inlet 177a of the gas introduction member 177 faces the inside of the gas nozzle 170A.

[0170] As described above, when the temperature adjustment gas is supplied to the gas inlet 177a, the temperature adjustment gas is supplied to the internal space 173 through the gas flow path 177b, the gas outlet 177c, and the through-hole 172h. Here, no through-hole or opening is formed in the portion of the upper surface member 171 located above the through-hole 172h. Therefore, the temperature adjustment gas supplied from the gas introduction member 177 to the internal space 173 first collides with the upper surface member 171 and is smoothly diffused within the internal space 173. Thereby, the temperature adjustment gas is smoothly and uniformly guided from the internal space 173 to the plurality of through-hole groups g1 to g8.

[0171] Note that in a state where the substrate W is adsorbed and held by the adsorption holding portion 11, the distance D1 (see the fifth row of FIG. 28) between the lower surface of the substrate W and the upper surface 170u of the gas nozzle 170A is set to about 0.5 mm to 10 mm, for example. Also, the distance D2 (see the fifth row of FIG. 28) between the outer edge of the adsorption holding portion 11 and the inner edge of the gas nozzle 170A is set to about 1 mm to 10 mm, for example.

[0172] (2) Second Modification Example FIG. 29 is a bottom view of the gas nozzle according to the second modification example. The gas nozzle 170B according to the second modification example has the same configuration as the gas nozzle 170A according to the first modification example, except for the points described below.

[0173] As shown in FIG. 29, on the bottom surface 170b of the gas nozzle 170B, instead of the plurality of gas introduction members 177 in FIG. 26, a single gas introduction member 179 is provided. The gas introduction member 179 basically has the same configuration as the gas introduction member 177.

[0174] Also, in this example, instead of forming a plurality of through holes 172h (FIG. 28) in the bottom surface member 172, a gas flow path 172p is formed inside the bottom surface member 172. In FIG. 29, the gas flow path 172p is shown by a dashed-dotted line and a dot pattern.

[0175] The gas flow path 172p has a single upstream end and a plurality (eight in this example) of downstream ends de. The single upstream end is located at the attachment portion of the gas introduction member 179 on the bottom surface 170b so as to be able to receive the temperature-adjusted gas supplied from the gas supply system 18 in FIG. 22 through the gas introduction member 179. The plurality of downstream ends de are located between every two adjacent through-hole groups of the plurality of through-hole groups g1 to g8 in a plan view and are open to the internal space 173 of the gas nozzle 170B.

[0176] The gas supply system 18 is connected to the above-described gas introduction member 179. Thereby, the temperature-adjusted gas supplied from the gas supply system 18 to the single gas introduction member 179 is supplied to a plurality of portions in the internal space 173 through the gas flow path 172p.

[0177] (3) Third Modification Example FIG. 30 is a plan view of the gas nozzle according to the third modification example. The gas nozzle 170C according to the third modification example has the same configuration as the gas nozzle 170A according to the first modification example, except for the points described below.

[0178] As shown in FIG. 30, in the gas nozzle 170C, twelve through-hole groups g11 to g22 are formed in the upper surface 170u. These multiple through-hole groups g11 to g22 are arranged in a windmill shape at equal intervals in the circumferential direction of the gas nozzle 170C. Each of the multiple through-hole groups g11 to g22 has a configuration in which a plurality of through-holes are arranged on a curve that extends while curving from the inner edge to the outer edge of the gas nozzle 170C. Further, in the gas nozzle 170C, a large number of through-holes that do not belong to the multiple through-hole groups g11 to g22 are formed in the inclined portion ut of the upper surface 170u.

[0179] In the gas nozzle 170C according to the third modification, compared with the gas nozzles 170A and 170B according to the first and second modifications, the number of through-holes through which the temperature-adjusting gas can be injected is larger. Thereby, the temperature-adjusting gas can be supplied more uniformly to a plurality of portions of the peripheral edge portion of the lower surface of the substrate W.

[0180] Note that, in the radial direction of each of the multiple through-hole groups g11 to g22, it is preferably determined that the distance between the centers of each two adjacent through-holes is equal to or less than the diameter of each through-hole. In this case, when the substrate W adsorbed and held by the adsorption holding portion 11 rotates, the temperature-adjusting gas can be supplied as a whole to the portion of the peripheral edge portion of the lower surface of the substrate W that faces the upper surface 170u.

[0181] (4) Fourth modification FIG. 31 is a plan view of the gas nozzle according to the fourth modification. The gas nozzle 170D according to the fourth modification has the same configuration as the gas nozzle 170A according to the first modification, except for the points described below.

[0182] As shown in FIG. 31, in the gas nozzle 170D, a plurality (eight in this example) of slit-shaped openings SL are formed in the upper surface 170u instead of the plurality of through-hole groups g1 to g8 (FIG. 24). The plurality of slit-shaped openings SL are arranged at equal intervals in the circumferential direction of the gas nozzle 170D. Each slit-shaped opening SL is formed to extend linearly from the vicinity of the inner edge to the vicinity of the outer edge of the gas nozzle 170D.

[0183] With such a configuration, when the gas nozzle 170D is in use, the temperature-adjusting gas is jetted from the internal space 173 of the gas nozzle 170D through each slit-shaped opening SL into the space on the upper surface 170u.

[0184] (5) The fifth modification FIG. 32 is an external perspective view of the gas nozzle according to the fifth modification. The gas nozzle 170E according to the fifth modification has the same configuration as the gas nozzle 170A according to the first modification, except for the points described below.

[0185] As shown in FIG. 32, the gas nozzle 170E includes a plate-shaped annular member 180 that surrounds the upper end portion of the upper surface member 171 of the gas nozzle 170A. The annular member 180 has an upper surface 180u that surrounds the upper surface 170u of the upper surface member 171 and is integrally formed with the upper surface member 171. The upper surface 170u and the upper surface 180u are flush. In FIG. 32, the outer edge of the upper surface 170u of the upper surface member 171 is indicated by a dashed line.

[0186] FIG. 33 is a longitudinal sectional view for explaining the positional relationship between the gas nozzle 170E according to the fifth modification and the substrate W held by the adsorption holding portion 11. As shown in FIG. 33, the upper surface 170u of the upper surface member 171 faces a part including the inner edge among the lower surface peripheral portions of the substrate W. On the other hand, the upper surface 180u of the annular member 180 faces another part among the lower surface peripheral portions of the substrate W.

[0187] When the substrate W is rotated by the suction holding unit 11, a temperature adjustment gas is jetted from a plurality of through holes h1 to hn on the upper surface 170u to a part including the inner edge of the lower surface peripheral portion of the substrate W. At this time, the upper surface 180u of the gas nozzle 170E guides the temperature adjustment gas jetted above the upper surface 170u to the outer peripheral end of the substrate W. Thereby, in the space between the lower surface peripheral portion of the substrate W and the upper surfaces 170u and 180u of the gas nozzle 170E, as shown by the thick solid arrows in FIG. 33, a flow of the temperature adjustment gas from the suction holding unit 11 toward the outer peripheral end of the substrate W is generated. As a result, when a resist liquid is supplied to the upper surface of the substrate W adsorbed and held by the suction holding unit 11, it is possible to prevent the resist liquid supplied to the upper surface of the substrate W from flowing around to the lower surface of the substrate W through the outer peripheral end portion.

[0188] [3] Confirmation test for the second coating unevenness The inventors carried out a coating process on the substrate W while supplying a temperature adjustment gas at a predetermined flow rate from the gas nozzle 170A at a predetermined temperature to the substrate W in the coating apparatus 1 according to the first modification. The substrate W obtained by this coating process is referred to as an example substrate. Further, the inventors carried out a coating process on the substrate W without supplying a temperature adjustment gas to the substrate W. The substrate W obtained by this coating process is referred to as a comparative example substrate.

[0189] Thereafter, the inventors measured the film thickness distribution of the resist film on a straight line passing through the center of each substrate W for the example substrate and the comparative example substrate. FIG. 34 is a diagram showing the film thickness distribution of the resist film in the example substrate and the comparative example substrate of the second embodiment.

[0190] In FIG. 34, similar to the example of FIG. 21, the vertical axis represents the film thickness of the resist film, and the horizontal axis represents the positions on the straight line passing through the center of the substrate W. Note that in the horizontal axis, "0" represents the center of the substrate W. Also, "150" represents one end of the straight line passing through the center of the substrate W on the surface of the substrate W, and "-150" represents the other end of the straight line passing through the center of the substrate W on the surface of the substrate W. Further, in this example, the positions of "75" and "-75" on the horizontal axis represent the positions of the inner edges (outer edges of the above-described held region) of the lower peripheral portion of the substrate W. Furthermore, in FIG. 34, the thick solid line indicates the film thickness distribution corresponding to the substrate of the example, and the dotted line indicates the film thickness distribution corresponding to the substrate of the comparative example.

[0191] As shown in FIG. 34, in the substrate of the comparative example, the film thickness is locally small at the outer edge of the held region and the positions in its vicinity. This indicates that the second coating unevenness is significantly manifested in the substrate of the comparative example.

[0192] On the other hand, for the substrate of the example, no significant decrease in the film thickness is observed at the outer edge of the held region and the positions in its vicinity. Therefore, it can be seen that the occurrence of the second coating unevenness is suppressed.

[0193] 3. Other Embodiments (1) In the rotary holding device 10 according to the above embodiment, in order to prevent the first coating unevenness shown in FIG. 12 from occurring on the substrate W after the coating process, the adsorption holding portions 11 according to the first and second configuration examples are used. Also, in order to prevent the second coating unevenness shown in FIG. 15 from occurring on the substrate W after the coating process, the gas nozzle 17 and the gas supply system 18 are provided. However, the present invention is not limited to the above examples.

[0194] The rotation holding device 10 according to the present invention only needs to be able to prevent the occurrence of at least one of the first and second coating unevenness. Therefore, in each of the coating devices 1 in FIGS. 1 and 22, if an adsorption holding part 11 is provided, the gas nozzle 17 and the gas supply system 18 may not be provided. Further, in each of the coating devices 1 in FIGS. 1 and 22, if the gas nozzle 17 and the gas supply system 18 are provided, instead of the adsorption holding part 11 according to the first and second configuration examples, the adsorption holding part 99 according to the reference form in FIG. 10 may be provided.

[0195] (2) The rotation holding device 10 according to the above embodiment is used in the coating device 1, but the present invention is not limited thereto. The rotation holding device 10 may be used in a substrate processing device that performs a process other than the coating process on the substrate W instead of the coating device 1. For example, the rotation holding device 10 may be used in a substrate cleaning device that etches the upper surface of the substrate W on which a predetermined film is formed. In this case, in the substrate cleaning device, an etching solution is supplied onto the upper surface of the substrate W adsorbed and held by the adsorption holding part 11.

[0196] (3) In the rotation holding device 10 according to the above embodiment, the gas nozzle 17 and the gas supply system 18 are provided to prevent the occurrence of the second coating unevenness in FIG. 15 on the substrate W after the coating process, but the present invention is not limited thereto.

[0197] In order to prevent the occurrence of the second coating unevenness in FIG. 15 on the substrate W after the coating process, instead of the gas nozzle 17 and the gas supply system 18, a lamp heater capable of locally heating the back surface of the substrate W with radiant heat may be used.

[0198] (4) In the rotation holding device 10 of FIG. 22 according to the second embodiment, four gas nozzles 17 for heating four portions of the substrate W are provided to prevent the occurrence of the second coating unevenness of FIG. 15 on the substrate W after the coating process, but the present invention is not limited thereto. In the rotation holding device 10 according to the second embodiment, two, three, or five or more gas nozzles 17 may be provided to supply the temperature adjustment gas to a plurality of portions of the substrate W simultaneously. In this case, the plurality of gas nozzles 17 may be provided so as to be arranged in the radial direction of the substrate W adsorbed and held by the adsorption holding portion 11, or may be provided so as to be arranged in the circumferential direction of the substrate W.

[0199] (5) In the rotation holding device 10 according to the above embodiment, depending on the temperature distribution of the substrate W during the coating process, the gas nozzle 17 may supply the temperature adjustment gas at a temperature lower than the processing temperature to equalize the temperature of the entire substrate W. That is, the gas nozzle 17 and the gas supply system 18 may be configured to locally cool a part of the substrate W in order to equalize the temperatures of a plurality of portions of the substrate W.

[0200] (6) In the coating device 1 according to the above embodiment, the substrate W to be processed has an outer peripheral end portion that is at least partially circular, but the present invention is not limited thereto. The substrate W to be processed may have an outer peripheral end portion that is at least partially elliptical, or may have an outer peripheral end portion that is at least partially polygonal.

[0201] (7) In the coating device 1 according to the above embodiment, a rim portion is formed at the outer peripheral end portion of the substrate W to be processed, but the present invention is not limited thereto. A rim portion may not be formed at the outer peripheral end portion of the substrate W to be processed.

[0202] (8) In the gas nozzle 17 used in the rotation holding device 10 of FIGS. 1 and 22 according to the first and second embodiments, the gas ejection portion 17b has a slit-shaped opening, but the present invention is not limited thereto.

[0203] FIG. 35 is an external perspective view showing another configuration example of the gas ejection portion 17b in the gas nozzle 17 of FIGS. 1 and 22. In FIG. 35, only the configuration of the gas ejection portion 17b and its peripheral portion in the gas nozzle 17 is shown enlarged. As shown in FIG. 35, the gas ejection portion 17b of the gas nozzle 17 may be constituted by a plurality of vertical holes arranged in a straight line. Each of the plurality of vertical holes in this example has a circular opening facing upward. According to this configuration, the temperature-adjusting gas is ejected upward from the plurality of vertical holes at the upper end portion of the gas nozzle 17. Thereby, a curtain-like air flow is generated from the gas nozzle 17 toward the substrate W. In the example of FIG. 35, the gas ejection portion 17b is constituted by 10 vertical holes, but the number of vertical holes constituting the gas ejection portion 17b is not limited to 10. It may be less than 10 or more than 10.

[0204] When the gas ejection portion 17b of the gas nozzle 17 is constituted by a plurality of vertical holes arranged in a straight line, the inner diameter of the circular opening of each vertical hole may be determined according to the position where the vertical hole is formed. FIG. 36 is an external perspective view showing still another configuration example of the gas ejection portion 17b in the gas nozzle 17 of FIGS. 1 and 22. In the example of FIG. 36, among the 13 vertical holes constituting the gas ejection portion 17b, the sizes of the 5 vertical holes in the range from the center of the gas nozzle 17 to one side portion sp1 are larger than the sizes of the 8 vertical holes in the range from the center of the gas nozzle 17 to the other side portion sp2. More specifically, in the example of FIG. 36, the inner diameter of each vertical hole in the range from the center of the gas nozzle 17 to one side portion sp1 is 2 mm, and the inner diameter of each vertical hole in the range from the center of the gas nozzle 17 to the other side portion sp2 is 1 mm.

[0205] Thus, by determining the sizes of the plurality of vertical holes constituting the gas ejection portion 17b according to the position, the temperature-adjusting gas can be ejected from the plurality of portions of the gas ejection portion 17b at different flow rates. For example, the gas nozzle 17 of FIG. 36 is arranged such that the one side portion sp1 and the other side portion sp2 are separated from the outer peripheral end portion of the adsorption holding portion 11 in this order.

[0206] In this case, a plurality of vertical holes having a large size and a plurality of vertical holes having a small size are arranged in this order in a direction away from the adsorption holding portion 11. As a result, a plurality of vertical holes having a large size face a portion of the substrate W near the outer peripheral end portion of the adsorption holding portion 11, and a plurality of vertical holes having a small size face a portion of the substrate W at a position separated from the outer peripheral end portion of the adsorption holding portion 11 by a predetermined distance outward. Therefore, more temperature adjustment gas can be supplied to the portion of the substrate W near the outer peripheral end portion of the adsorption holding portion 11 than to the portion of the substrate W at a position separated from the outer peripheral end portion of the adsorption holding portion 11 by a predetermined distance outward. As a result, the temperature of each part of the substrate W can be adjusted with higher accuracy.

[0207] In the example of FIG. 36, the gas ejection portion 17b is composed of 13 vertical holes, but the number of vertical holes constituting the gas ejection portion 17b is not limited to 13. It may be less than 13 or more than 13. Further, the sizes of the plurality of vertical holes constituting the gas ejection portion 17b are not limited to two types, and may be three or more types. Alternatively, the sizes of all the vertical holes of the plurality of vertical holes constituting the gas ejection portion 17b may be different from each other.

[0208] (9) Each of the gas nozzles 17 in FIGS. 22 and 23 according to the second embodiment may be attached to the housing of the coating apparatus 1 so as to be position-adjustable with respect to the adsorption holding portion 11. FIGS. 37 and 38 are schematic plan views of the coating apparatus 1 showing an example in which position adjustment is performed on some of the plurality of gas nozzles 17 in FIGS. 22 and 23.

[0209] As shown by the white arrows in FIGS. 37 and 38, in the coating apparatus 1 of this example, each of the plurality of gas nozzles 17 is position - adjustable in a direction approaching and a direction separating from the adsorption holding portion 11. In the example of FIG. 37, three of the four gas nozzles 17 are fixed so as to be close to the adsorption holding portion 11, and one gas nozzle 17 is fixed so as to be separated from the adsorption holding portion 11 by a predetermined distance. Also, in the example of FIG. 38, two of the four gas nozzles 17 are fixed so as to be close to the adsorption holding portion 11, and two gas nozzles 17 are fixed so as to be separated from the adsorption holding portion 11 by a predetermined distance.

[0210] In this way, by appropriately adjusting the positions of the plurality of gas nozzles 17 with respect to the adsorption holding portion 11, a desired amount of temperature - adjusting gas can be supplied to a plurality of portions (a plurality of annular portions) in the radial direction on the lower surface of the substrate W adsorbed and held on the adsorption holding portion 11.

[0211] 4. Corresponding relationship between each component of the claims and each element of the embodiment Hereinafter, an example of the correspondence between each component of the claims and each element of the embodiment will be described. In the above - described embodiment, the rotation holding device 10 is an example of a rotation holding device, the adsorption holding portion 11 is an example of an adsorption holding portion, the upper surface 11u is an example of an upper surface, the rotation shaft 12 and the rotation driving portion 13 are examples of a rotation driving portion, and the rotation shaft 12 and the central axis 11c are examples of a rotation axis.

[0212] Also, the peripheral region R1 is an example of a peripheral region, the central region R2 is an example of a central region, the suction hole vh1 is an example of a first suction hole, the suction hole vh2 is an example of a second suction hole, the angular pitch α is an example of the angular pitch of the first suction hole, the angular pitch β is an example of the angular pitch of the second suction hole, the linear path LP is an example of a linear path, and the annular path RP is an example of an annular path.

[0213] Furthermore, the gas nozzle 17, the gas supply system 18, and the gas nozzles 170A to 170E are examples of a temperature adjustment unit and a gas supply unit, the upper surfaces 170u of the gas nozzles 170A to 170E are examples of a first annular opposing surface, the plurality of through holes h1 to hn of the plurality of through hole groups g1 to g8 are examples of a plurality of gas injection ports, the upper surface 180u of the gas nozzle 170E is an example of a second annular opposing surface, the processing liquid supply device 20 is an example of a processing liquid supply device, and the coating device 1 is an example of a substrate processing device. As each component of the claims, various other elements having the configurations or functions described in the claims can also be used. 5. Reference Embodiment (1) The rotation holding device according to the first reference embodiment is a rotation holding device that rotates while sucking and holding the central portion of the lower surface of the substrate, and includes a suction holding portion having an upper surface that sucks and holds the central portion of the lower surface of the substrate, and a rotation driving portion that rotates the suction holding portion around a rotation axis extending in the vertical direction. The upper surface has a peripheral region along the outer edge and a central region surrounded by the peripheral region. A plurality of first suction holes are provided in the peripheral region, and a plurality of second suction holes are provided in the central region. The surface density of the plurality of first suction holes in the peripheral region is greater than the surface density of the plurality of second suction holes in the central region. In the rotation holding device, the central portion of the lower surface of the substrate is adsorbed and held by the adsorption holding portion. The adsorption holding portion for adsorbing and holding the substrate is rotated by a rotation driving portion. At this time, the portion of the lower surface of the substrate facing the central portion region of the upper surface of the adsorption holding portion is sucked by a plurality of second suction holes. Further, the portion of the lower surface of the substrate facing the peripheral portion region of the upper surface of the adsorption holding portion is sucked by a plurality of first suction holes. Here, the surface density of the plurality of first suction holes in the peripheral portion region is larger than the surface density of the plurality of second suction holes in the central portion region. Therefore, on the upper surface of the adsorption holding portion, the portion of the substrate facing the peripheral portion region is adsorbed with a larger suction force than the portion of the substrate facing the central portion region. Thereby, when the substrate adsorbed and held by the adsorption holding portion rotates, the portion of the substrate located on the peripheral portion region is suppressed from lifting off from the upper surface of the adsorption holding portion, and the holding state of the substrate is stabilized. Therefore, when processing is performed on the substrate rotated by the above rotation holding device, it is possible to prevent the processing of the substrate from varying at a plurality of portions on the substrate due to a part of the substrate lifting off from the upper surface of the adsorption holding portion. As a result, uniform processing over the entire substrate becomes possible. (2) The plurality of first suction holes are arranged on at least one first circle centered on the rotation axis in the peripheral portion region, and the plurality of second suction holes are arranged on at least one second circle centered on the rotation axis in the central portion region. The linear density of the plurality of first suction holes on each first circle in the peripheral portion region may be larger than the linear density of the plurality of second suction holes on any second circle in the central portion region. In this case, the plurality of first suction holes are dispersed and arranged on the first circle, and the plurality of second suction holes are dispersed and arranged on the second circle, whereby the central portion of the lower surface of the substrate is more stably adsorbed and held on the upper surface of the adsorption holding portion. (3) The number of the plurality of first suction holes on each first circle in the peripheral portion region may be larger than the number of the plurality of second suction holes on any second circle in the central portion region. Thereby, with a simple configuration, the surface density of the plurality of first suction holes in the peripheral portion region can be made larger than the surface density of the plurality of second suction holes in the central portion region. (4) The angular pitch between each two adjacent first suction holes on each first circle in the peripheral region may be smaller than the angular pitch between each two adjacent second suction holes on any second circle in the central region. In this case, with a simple configuration, the surface density of the plurality of first suction holes in the peripheral region can be made larger than the surface density of the plurality of second suction holes in the central region. (5) The suction holding portion is formed so as to overlap the central region in plan view and extend linearly from the rotation axis toward the outer edge of the suction holding portion, and includes a plurality of linear paths that guide the atmosphere on the upper surface sucked by the plurality of second suction holes to the outside of the suction holding portion, and an annular path that overlaps the peripheral region in plan view and surrounds the plurality of linear paths and guides the atmosphere on the upper surface sucked by the plurality of first suction holes to the outside of the suction holding portion. In this case, with a simple configuration, it becomes possible to suck and hold the central portion of the lower surface of the substrate by the plurality of first suction holes and the plurality of second suction holes. (6) In the peripheral region, at least a part of the plurality of first suction holes may be staggeredly arranged in the rotational direction centered on the rotation axis. In this case, when manufacturing the rotation holding device, it becomes easy to form the plurality of first suction holes in the peripheral region. Also, with a simple configuration, the surface density of the plurality of first suction holes in the peripheral region can be increased. (7) At least a part of the first suction holes formed at the position farthest from the rotation axis among the plurality of first suction holes may have a smaller diameter than the other first suction holes and the plurality of second suction holes. In this case, it is possible to prevent the suction force acting on the substrate from becoming excessively large at at least a part of the first suction holes farthest from the rotation axis. Thereby, unintended deformation of the substrate is reduced. (8) The upper surface may have a circular shape, and the diameter of the upper surface may be within a range of 15% of the diameter of the substrate with the radius of the substrate as the central value. In this way, when the diameter of the upper surface is within the above range, the holding state of the central portion of the lower surface of the substrate by the suction holding portion is more stable than when the diameter of the upper surface is within a range smaller than the above range. Also, when the diameter of the upper surface is within the above range, it becomes easier to fabricate the suction holding portion than when the diameter of the upper surface is within a range larger than the above range. (9) The rotation holding device may further include a temperature adjusting unit that adjusts the temperature of a portion of the substrate that is not adsorbed and held by the adsorption holding unit in a state where the adsorption holding unit adsorbs and holds the substrate. According to the above temperature adjusting unit, when a process is performed on a substrate rotated by the rotation holding device, it is possible to suppress the occurrence of a temperature difference between a plurality of portions of the substrate. Therefore, a uniform process can be performed over the entire substrate. (10) The temperature adjusting unit may adjust the temperature of a portion of the substrate that is not adsorbed and held by the adsorption holding unit so that the temperature of the portion of the substrate that is not adsorbed and held by the adsorption holding unit matches or approaches the temperature of the portion of the substrate that is adsorbed and held by the adsorption holding unit. Thereby, the occurrence of a temperature difference between a plurality of portions of the substrate rotated by the rotation holding device is suppressed. Therefore, a more uniform process can be performed over the entire substrate. (11) The rotation holding device according to the second reference embodiment is a rotation holding device that rotates while adsorbing and holding the central portion of the lower surface of the substrate, and includes an adsorption holding unit that adsorbs and holds the central portion of the lower surface of the substrate, a rotation driving unit that rotates the adsorption holding unit around a rotation axis extending in the vertical direction, and a temperature adjusting unit that adjusts the temperature of at least a part of the lower surface peripheral portion of the substrate that is not adsorbed and held by the adsorption holding unit in a state where the adsorption holding unit adsorbs and holds the substrate. In that rotation holding device, the central portion of the lower surface of the substrate is adsorbed and held by the adsorption holding unit. The adsorption holding unit that adsorbs and holds the substrate is rotated by the rotation driving unit. According to the above temperature adjusting unit, when a process is performed on a substrate rotated by the rotation holding device, it is possible to suppress the occurrence of a temperature difference between a plurality of portions of the substrate. Therefore, a uniform process can be performed over the entire substrate. (12) The temperature adjusting unit may include a gas supply unit that supplies a temperature adjusting gas to at least a part of the lower surface peripheral portion. In this case, the temperature of the portion of the substrate including the lower surface peripheral portion is adjusted by the temperature adjusting gas. Thereby, since it is not necessary to provide a heating device such as a heater or an ultraviolet lamp in the rotation holding device, the processing environment of the substrate is not affected by excessive heat. (13) The temperature adjusting gas may be a gas adjusted so that the temperature of the portion of the substrate including the lower surface peripheral portion is made to match or approach the temperature of the portion of the substrate including the lower surface central portion by being supplied to at least a part of the lower surface peripheral portion. In this case, by supplying the temperature adjustment gas to at least a part of the peripheral edge portion of the lower surface of the substrate, the generation of a temperature difference among a plurality of portions of the substrate is suppressed. Therefore, a more uniform process over the entire substrate becomes possible. (14) The gas supply unit may supply the temperature adjustment gas to a region including the inner edge of the peripheral edge portion of the lower surface of the substrate among the peripheral edge portion of the lower surface of the substrate. In this case, a decrease in the temperature of the inner edge of the peripheral edge portion of the lower surface and the portion of the substrate located in the vicinity thereof is prevented. Thereby, a uniform process can be performed on the entire lower surface of the substrate. (15) The gas supply unit may be configured such that, in a state where the adsorption and holding unit adsorbs and holds the substrate, the temperature adjustment gas can be simultaneously injected into a plurality of different portions in the peripheral edge portion of the lower surface of the substrate. In this case, the temperature adjustment gas can be simultaneously injected into a plurality of portions of the peripheral edge portion of the lower surface of the substrate. Therefore, without excessively increasing the flow rate of the temperature adjustment gas supplied to each of the plurality of portions, the temperature of the portion of the substrate including the peripheral edge portion of the lower surface can be made to coincide with or approach the temperature of the portion of the substrate including the central portion of the lower surface. As a result, deformation and breakage of the substrate due to the supply of the temperature adjustment gas at an excessive flow rate to the peripheral edge portion of the lower surface of the substrate are prevented. (16) The gas supply unit includes a first annular facing surface that surrounds the adsorption and holding unit and faces at least a part of the peripheral edge portion of the lower surface of the substrate in a state where the adsorption and holding unit adsorbs and holds the substrate. A plurality of gas injection ports for simultaneously injecting the temperature adjustment gas into at least a part of the peripheral edge portion of the lower surface of the substrate may be formed in the first annular facing surface. In this case, the temperature adjustment gas is supplied to at least a part of the peripheral edge portion of the lower surface of the substrate from the plurality of gas injection ports formed in the first annular facing surface. (17) At least a part of the plurality of gas injection ports may be dispersedly arranged in a rotational direction centered on the rotation axis. In this case, the temperature adjustment gas is simultaneously supplied to a plurality of portions in the circumferential direction of the substrate among the peripheral edge portion of the lower surface of the substrate. (18) The first annular opposing surface faces a first annular portion of the peripheral edge of the lower surface of the substrate in a state where the adsorption holding portion adsorbs and holds the substrate. The gas supply portion is provided so as to face a second annular portion that surrounds the first annular opposing surface and surrounds the first annular portion of the peripheral edge of the lower surface of the substrate in a state where the adsorption holding portion adsorbs and holds the substrate. It may further include a second annular opposing surface that guides the temperature-adjusting gas ejected from the plurality of gas ejection ports of the first annular opposing surface to the outer peripheral end of the substrate. In this case, in the space between the peripheral edge of the lower surface of the substrate and the first and second annular opposing surfaces, a flow of the temperature-adjusting gas from the adsorption holding portion toward the outer peripheral end of the substrate is generated. Thereby, when the processing liquid is supplied to the upper surface of the substrate adsorbed and held by the adsorption holding portion, it is prevented that the processing liquid supplied to the upper surface of the substrate flows into the lower surface through the outer peripheral end. (19) The adsorption holding portion has an upper surface that adsorbs and holds the central portion of the lower surface of the substrate. The upper surface has a peripheral edge region along the outer edge and a central region surrounded by the peripheral edge region. A plurality of first suction holes are provided in the peripheral edge region, and a plurality of second suction holes are provided in the central region. The surface density of the plurality of first suction holes in the peripheral edge region may be larger than the surface density of the plurality of second suction holes in the central region. According to the configuration of the adsorption holding portion described above, when the substrate adsorbed and held by the adsorption holding portion rotates, the portion of the substrate located on the peripheral edge region is suppressed from lifting off the upper surface of the adsorption holding portion, and the holding state of the substrate is stabilized. Therefore, it is prevented that the processing of the substrate varies at a plurality of portions on the substrate due to a part of the substrate lifting off the upper surface of the adsorption holding portion. As a result, uniform processing over the entire substrate becomes possible. (20) The rotation holding device according to the third reference embodiment is a substrate processing device that performs a predetermined process on a substrate, and includes the rotation holding device according to the first or second reference embodiment, and a processing liquid supply device that supplies a processing liquid onto the substrate in a state where the substrate is adsorbed and held by the adsorption holding portion and rotated by the rotation driving portion. The substrate processing apparatus includes a rotation holding device according to the first or second reference form. According to the rotation holding device according to the first reference form, it is suppressed that a part of the substrate to be rotated floats from the upper surface of the adsorption holding part. Therefore, uniform processing using a processing liquid can be performed on the entire substrate rotated by the rotation holding device. Further, according to the rotation holding device according to the second reference form, it is suppressed that a temperature difference occurs between a plurality of parts of the substrate to be rotated. Therefore, uniform processing using a processing liquid can be performed on the entire substrate rotated by the rotation holding device.

Explanation of Symbols

[0214] 1... Coating device, 10... Rotation holding device, 11c... Central axis, 11u, 170u, 180u... Upper surface, 12... Rotation axis, 13... Rotation drive unit, 14... Suction device, 15... Cup, 15d... Drain, 15x... Bottom, 15y... Outer peripheral wall portion, 16... Drainage guide pipe, 17, 170A, 170B, 170C, 170D, 170E... Gas nozzles, 17a... Gas introduction part, 17b... Gas ejection part, 17v... Gas supply path, 18... Gas supply system, 20... Processing liquid supply device, 21... Liquid nozzle, 22... Processing liquid supply system, 23... Nozzle moving part, 40... Disk-shaped member, 41, 61... Adsorption part, 42... Intake path forming part, 43... Support part, 43b, 73... Communication hole, 50, 180... Annular member, 60... Upper circular member, 60b... Lower surface, 62... Outer peripheral wall portion, 65... Threaded hole, 70... Lower circular member, 71... Support part, 71a... Mounting part, 72... Outer peripheral wall portion, 72g... Groove, 74, 172h, h1~hn... Through hole, 79... Sealing member, 99... Adsorption holding part, 99c... Central axis, 170b... Lower surface, 171... Upper surface member, 172... Lower surface member, 172p... Gas flow path, 173... Internal space, 177, 179... Gas introduction member, 177a... Gas inlet, 177b... Gas flow path, 177c... Gas outlet, 178... Fixed member, BL... Threaded member, de... Downstream end, g1~g8, g11~g22... Group of through holes, LG... Linear groove portion, LP... Linear path, nc... Non-contact part, pt1... First pitch, pt2... Second pitch, R1... Peripheral region, R2... Central region, RP... Annular path, RG... Annular groove portion, RL... Resist liquid, SL... Slit-shaped opening, sp1... One side part, sp2... The other side part, ut... Inclined part, vh, vh1, vh2... Suction holes, vp... Intake path, W... Substrate

Claims

1. A rotary holding device that rotates while sucking and holding the central portion of the lower surface of a substrate, comprising: a suction holding portion having an upper surface that sucks and holds the central portion of the lower surface of the substrate; a rotary drive portion that rotates the suction holding portion around a rotary shaft extending in the vertical direction, wherein the upper surface has a peripheral region along the outer edge and a central region surrounded by the peripheral region, a plurality of first suction holes are provided in the peripheral region, a plurality of second suction holes are provided in the central region, the surface density of the plurality of first suction holes in the peripheral region is greater than the surface density of the plurality of second suction holes in the central region, the suction holding portion is formed so as to overlap the central region in plan view and extend linearly from the rotary shaft toward the outer edge of the suction holding portion, and includes a plurality of linear paths that guide the atmosphere on the upper surface sucked by the plurality of second suction holes to the outside of the suction holding portion; a rotary holding device including an annular path that overlaps the peripheral region in plan view and surrounds the plurality of linear paths, and guides the atmosphere on the upper surface sucked by the plurality of first suction holes to the outside of the suction holding portion.

2. The plurality of first suction holes are arranged on at least one first circle centered on the rotary shaft in the peripheral region, the plurality of second suction holes are arranged on at least one second circle centered on the rotary shaft in the central region, The linear density of the plurality of first suction holes on each first circle in the peripheral region is greater than the linear density of the plurality of second suction holes on any second circle in the central region. The rotary holding device according to Claim 1.

3. The number of the plurality of first suction holes on each first circle in the peripheral region is greater than the number of the plurality of second suction holes on any second circle in the central region. The rotary holding device according to Claim 2.

4. The angular pitch between any two adjacent first suction holes on each first circle in the peripheral region is smaller than the angular pitch between any two adjacent second suction holes on any second circle in the central region. The rotary holding device according to Claim 2 or 3.

5. A rotary holding device that rotates while sucking and holding the central portion of the lower surface of a substrate, comprising: a suction holding portion having an upper surface that sucks and holds the central portion of the lower surface of the substrate; a rotary drive portion that rotates the suction holding portion around a rotary shaft extending in the vertical direction, The upper surface is a peripheral region along the outer edge and a central region surrounded by the peripheral region, wherein a plurality of first suction holes are provided in the peripheral region, a plurality of second suction holes are provided in the central region, the surface density of the plurality of first suction holes in the peripheral region is greater than the surface density of the plurality of second suction holes in the central region, a rotation holding device, wherein at least some of the first suction holes formed at a position farthest from the rotation axis among the plurality of first suction holes have a smaller diameter than the other first suction holes and the plurality of second suction holes.

6. The rotation holding device according to any one of claims 1 to 5, further comprising a temperature adjusting unit that adjusts the temperature of a portion of the substrate that is not adsorbed and held by the adsorption holding unit in a state where the adsorption holding unit adsorbs and holds the substrate.

7. The temperature adjusting unit adjusts the temperature of a portion of the substrate that is not adsorbed and held by the adsorption holding unit such that the temperature of the portion of the substrate that is not adsorbed and held by the adsorption holding unit coincides with or approaches the temperature of the portion of the substrate that is adsorbed and held by the adsorption holding unit. The rotation holding device according to claim 6.

8. A substrate processing apparatus for performing a predetermined process on a substrate, the rotation holding device according to any one of claims 1 to 7, and a processing liquid supply device that supplies a processing liquid onto the substrate in a state where the substrate is adsorbed and held by the adsorption holding unit and rotated by the rotation driving unit. A substrate processing apparatus.

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