Signal detection device and analysis device

Abstract

To provide a high-speed, low-noise signal detection device.SOLUTION: A signal detection device 100 includes a semiconductor detector 10 which detects a signal from a sample, a light emitting element 30 which converts a first electric signal S2 output from the semiconductor detector 10 according to a detection result of the signal from the sample into an optical signal S4, and a light receiving element 40 which converts the optical signal S4 converted by the light emitting element 30 into an electric signal and amplifies it to output a second electric signal S6.SELECTED DRAWING: Figure 1

Description

Technical Field

[0001] The present invention relates to a signal detection device and an analysis device.

Background Art

[0002] In an analysis device such as a scanning electron microscope, a detector is mounted to detect signals such as electrons and X-rays emitted from a sample.

[0003] For example, Patent Document 1 discloses a detector that detects electrons emitted from a sample by irradiating the sample with an electron beam. In Patent Document 1, an analog signal output from the detector is amplified by an amplifier, converted into a digital signal by an A / D converter, and sent to an image processing device as image data.

[0004] As a detector for detecting electrons emitted from a sample, a semiconductor detector is known. The semiconductor detector outputs a current corresponding to the amount of incident electrons and the energy of the electrons.

Prior Art Documents

Patent Documents

[0005]

Patent Document 1

Summary of the Invention

Problems to be Solved by the Invention

[0006] In a scanning electron microscope, when observing at low acceleration or with a low irradiation current, the current output from the semiconductor detector becomes small. Therefore, it is necessary to amplify the current output from the semiconductor detector.

[0007] For example, a multi-stage amplifier circuit using an operational amplifier can amplify the current output from a semiconductor detector. However, as the number of amplification stages increases, the noise also increases by the amount of the increase in the number of stages, and the S / N (signal noise ratio) of the image decreases. Also, if the gain of the amplifier circuit is increased to reduce the number of amplification stages, the bandwidth of the circuit narrows and high speed cannot be achieved.

Means for Solving the Problems

[0008] One aspect of the signal detection device according to the present invention is a semiconductor detector that detects a signal from a sample, a light-emitting element that converts a first electrical signal output from the semiconductor detector according to the detection result of the signal from the sample into an optical signal, a light-receiving element that converts the optical signal converted by the light-emitting element into an electrical signal and amplifies it to output a second electrical signal, and includes Look, including an amplifier circuit that amplifies the first electrical signal, the gain of the amplifier circuit is variable, including a control unit that controls the gain of the amplifier circuit based on the second electrical signal .

[0009] In such a signal detection device, the light-emitting element converts the first electrical signal output from the semiconductor detector into an optical signal, and the light-receiving element converts the optical signal into an electrical signal and amplifies it to output a second electrical signal. Therefore, in such a signal detection device, for example, compared with the case of amplifying the electrical signal output from the semiconductor detector by a multi-stage amplifier circuit using an operational amplifier, noise can be reduced and the bandwidth is not limited. Therefore, such a signal detection device can achieve high speed and low noise.

[0010] One aspect of the analyzer according to the present invention is including the above signal detection device.

Brief Description of the Drawings

[0011]

Figure 1

Figure 2

Figure 3

Figure 4

Embodiments for Carrying Out the Invention

[0012] Hereinafter, preferred embodiments of the present invention will be described in detail with reference to the drawings. Note that the embodiments described below do not unduly limit the content of the present invention described in the claims. Also, not all of the configurations described below are essential constituent elements of the present invention.

[0013] 1. First Embodiment 1.1. Configuration of the Signal Detection Device First, the signal detection device according to the first embodiment will be described with reference to the drawings. FIG. 1 is a diagram showing the configuration of the signal detection device 100 according to the first embodiment.

[0014] As shown in FIG. 1, the signal detection device 100 includes a semiconductor detector 10, an amplifier circuit 20, a light emitting element 30, a light receiving element 40, a current-voltage conversion circuit 50, an A / D conversion circuit 60, and a control unit 70. The amplifier circuit 20, the light emitting element 30, the light receiving element 40, the current-voltage conversion circuit 50, the A / D conversion circuit 60, and the control unit 70 constitute a signal processing unit 2 that generates an image signal S8 based on the electrical signal S2 output from the semiconductor detector 10.

[0015] The semiconductor detector 10 detects electrons emitted from the sample. The semiconductor detector 10 is, for example, a reflected electron detector. That is, the semiconductor detector 10 irradiates the sample with an electron beam and detects the reflected electrons emitted from the sample. The semiconductor detector 10 outputs an electrical signal S2 according to the detection result of the electrons.

[0016] The semiconductor detector 10 includes, for example, a pin-type photodiode having a p-type semiconductor layer, an n-type semiconductor layer, and an i-type semiconductor layer sandwiched between the p-type semiconductor layer and the n-type semiconductor layer. When electrons are incident on the semiconductor detector 10, electron-hole pairs in the i-type semiconductor layer are excited and separated into free electrons and free holes. The free electrons move to the n-type semiconductor layer by the voltage applied to the p-type semiconductor layer and the n-type semiconductor layer, and the free holes move to the p-type semiconductor layer. As a result, a current flows according to the detection result of electrons (the incident amount of electrons and the energy of electrons). The semiconductor detector 10 outputs the current flowing according to the detection result of electrons as an electrical signal S2.

[0017] The amplifier circuit 20 amplifies the electrical signal S2 output from the semiconductor detector 10. The gain of the amplifier circuit 20 is variable. By increasing the gain of the amplifier circuit 20, the intensity of the optical signal S4 output from the light-emitting element 30 can be increased. The amplifier circuit 20 includes an amplifier 22 and a gain setting circuit 24.

[0018] The amplifier 22 converts the current output from the semiconductor detector 10 into a voltage. The amplifier 22 is, for example, an operational amplifier. The gain of the amplifier 22 is set by the gain setting circuit 24.

[0019] The gain setting circuit 24 includes a switch 241, a switch 242, a switch 243, a resistor 244, and a resistor 245.

[0020] The switch 241 is connected in parallel to the amplifier 22. The switch 242 and the resistor 244 are connected in series, and the series-connected switch 242 and resistor 244 are connected in parallel to the amplifier 22. The switch 243 and the resistor 245 are connected in series, and the series-connected switch 243 and resistor 245 are connected in parallel to the amplifier 22. The resistance value of the resistor 244 and the resistance value of the resistor 245 are different.

[0021] In the amplifier circuit 20, the amplifier 22 is feedback-controlled with a resistor. By switching the resistors with the switch 241, the switch 242, and the switch 243, the gain of the amplifier 22 can be controlled.

[0022] Specifically, by turning on the switch 241, the gain of the amplifier 22 becomes 1 times. By turning on the switch 242, the gain of the amplifier 22 becomes a value corresponding to the resistance value of the resistor 244. By turning on the switch 243, the gain of the amplifier 22 becomes a value corresponding to the resistance value of the resistor 245. Thus, in the amplifier circuit 20, the gain can be switched in three steps. Note that in the amplifier circuit 20, it may be possible to switch the gain in more than three steps.

[0023] The light emitting element 30 converts the electrical signal S2 output from the semiconductor detector 10 into an optical signal S4. In the illustrated example, the electrical signal S2 (current) output from the semiconductor detector 10 is converted into a voltage and amplified by the amplifier circuit 20 and then sent to the light emitting element 30.

[0024] The light emitting element 30 outputs an optical signal S4 with an intensity corresponding to the electrical signal S2 output from the semiconductor detector 10. The light emitting element 30 outputs white light as the optical signal S4. The light emitting element 30 includes, for example, a light emitting diode and a phosphor. In the light emitting element 30, the light emitted by the light emitting diode is converted into white light by the phosphor. For example, the light emitting element 30 may output white light by irradiating a red phosphor, a green phosphor, and a blue phosphor with an ultraviolet light emitting diode. Also, the light emitting element 30 may output white light by irradiating a yellow phosphor with a blue light emitting diode.

[0025] Note that the light emitting element 30 may include a red light emitting diode, a green light emitting diode, and a blue light emitting diode, and output white light by combining these three light emitting diodes.

[0026] The light receiving element 40 outputs an electrical signal S6 by converting and amplifying the optical signal S4 output from the light emitting element 30 into an electrical signal. The light receiving element 40 receives the optical signal S4 and outputs the electrical signal S6.

[0027] The light receiving element 40 is, for example, a photomultiplier tube. The photomultiplier tube includes a photocathode and an electron amplification section. In the light receiving element 40, photoelectrons emitted from the photocathode by the light incident on the light receiving element 40 generate secondary electrons in the electron amplification section. The generated secondary electrons are accelerated by the applied voltage and multiplied while passing through the electron amplification section, and are output as an electrical signal (current). In a photomultiplier tube, a gain (amplification factor) of about tens of thousands to several million times can be obtained. The gain of the photomultiplier tube is controlled by the high voltage control circuit 42. By adjusting the voltage applied to the light receiving element 40 by the high voltage control circuit 42, the gain of the light receiving element 40 can be controlled.

[0028] Note that the light receiving element 40 is not limited to a photomultiplier tube, and any element that can change and amplify the optical signal S4 output from the light emitting element 30 into an electrical signal may be used. For example, an avalanche photodiode may be used as the light receiving element 40.

[0029] The current-voltage conversion circuit 50 converts and amplifies the electrical signal S6 (current) output from the light receiving element 40 into a voltage. The current-voltage conversion circuit 50 includes an operational amplifier 52 and a resistor 54, and applies feedback to the operational amplifier 52 with the resistor 54.

[0030] The A / D conversion circuit 60 converts the electrical signal S6 (analog signal) output from the light receiving element 40 into a digital signal and outputs it as an image signal S8. The image signal S8 includes, for example, information on the luminance of the pixels of a scanning electron microscope image.

[0031] The control unit (control circuit) 70 controls the gain of the light receiving element 40 and the gain of the amplification circuit 20. The control unit 70 controls the gain of the light receiving element 40 and the gain of the amplification circuit 20 based on the electrical signal S6. Here, the control unit 70 controls the gain of the light receiving element 40 and the gain of the amplification circuit 20 based on the image signal S8 (information on the luminance of the pixels) obtained by analog-digital converting the electrical signal S6 by the A / D conversion circuit 60. Details of the processing of the control unit 70 will be described later.

[0032] 1.2. Operation Next, the operation of the signal detection device 100 will be described.

[0033] When electrons are incident on the semiconductor detector 10, the semiconductor detector 10 generates a current according to the detection result of the incident electrons and outputs the current as an electrical signal S2. The electrical signal S2 (current) is converted into a voltage and amplified by the amplifier circuit 20. The gain of the amplifier circuit 20 is set by the gain setting circuit 24.

[0034] The light emitting element 30 converts the electrical signal S2 into an optical signal S4. The light emitting element 30 outputs an optical signal S4 with an intensity corresponding to the electrical signal S2 output from the semiconductor detector 10. The light emitting element 30 outputs white light as the optical signal S4.

[0035] The light receiving element 40 outputs an electrical signal S6 by converting and amplifying the optical signal S4 into an electrical signal. The electrical signal S6 (current) is converted into a voltage by the current-voltage conversion circuit 50, converted into a digital signal by the A / D conversion circuit 60, and output as an image signal S8 from the A / D conversion circuit 60.

[0036] The control unit 70 controls the gain of the light receiving element 40 and the gain of the amplifier circuit 20 based on the electrical signal S6 output from the light receiving element 40.

[0037] FIG. 2 is a flowchart showing an example of the gain control process of the control unit 70.

[0038] Immediately after the start of processing, the switch 241 of the signal detection device 100 is on. That is, the gain G2 of the amplifier circuit 20 is 1 times. Also, the gain G4 of the light receiving element 40 is at its initial value. The initial value can be set to any value.

[0039] The control unit 70 acquires the image signal S8 and specifies the luminance L of the pixel based on the image signal S8 (S100). The control unit 70 determines whether the luminance L of the pixel is smaller than the threshold value A (S102). The threshold value A is, for example, the lower limit value of the luminance of the pixels constituting the scanning electron microscope image. The threshold value A can be set to a desired value.

[0040] When the control unit 70 determines that the luminance L of the pixel is smaller than the threshold value A (Yes in S102), it determines whether the gain G4 of the light receiving element 40 is smaller than the threshold value B (S104). The threshold value B is, for example, the maximum value of the gain of the light receiving element 40.

[0041] When the control unit 70 determines that the gain G4 of the light receiving element 40 is smaller than the threshold value B (Yes in S1 04), it increases the gain G4 of the light receiving element 40 (S106). For example, the control unit 70 increases the gain G4 of the light receiving element 40 by a preset gain amount.

[0042] Also, when the control unit 70 determines that the gain G4 of the light receiving element 40 is not smaller than the threshold value B (No in S104), it increases the gain G2 of the amplifier circuit 20 (S108). For example, in the initial state of the gain setting circuit 24, since the switch 241 is on, the switch 241 is turned off and the switch 242 is turned on. As a result, the gain G2 of the amplifier circuit 20 (amplifier 22) increases. At this time, the control unit 70 returns the gain G4 of the light receiving element 40 to the initial value.

[0043] After increasing the gain G4 of the light receiving element 40 (after S106) or after increasing the gain G2 of the amplifier circuit 20 (after S108), the control unit 70 returns to the process S100, acquires the image signal S8, and specifies the luminance L of the image based on the image signal S8 (S100). The control unit 70 repeats the processes S100, S102, S104, S106, and S108 until it is determined that the luminance L of the pixel is not smaller than the threshold value A, that is, until it is determined that the luminance L is equal to or greater than the threshold value A.

[0044] After the process S100 of specifying the luminance L of the image, when the control unit 70 determines that the luminance L of the pixel is not smaller than the threshold value A (No in S102), it ends the gain control process.

[0045] 1.3. Effect The signal detection device 100 includes a semiconductor detector 10 that detects a signal from a sample, a light-emitting element 30 that converts an electrical signal S2 output from the semiconductor detector 10 into an optical signal S4 according to the detection result of the signal from the sample, and a light-receiving element 40 that converts the optical signal S4 converted by the light-emitting element 30 into an electrical signal and outputs an electrical signal S6 by amplifying it.

[0046] In this way, in the signal detection device 100, the electrical signal S2 is converted into the optical signal S4 by the light-emitting element 30, and the optical signal S4 is converted into an electrical signal and amplified by the light-receiving element 40 to output the electrical signal S6. Therefore, in the signal detection device 100, for example, compared with the case of amplifying the electrical signal S2 output from the semiconductor detector 10 by a multi-stage amplifier circuit using an operational amplifier, noise can be reduced and the bandwidth is not limited. Therefore, the signal detection device 100 can achieve high speed and low noise.

[0047] The signal detection device 100 includes an amplifier circuit 20 that amplifies the electrical signal S2 output from the semiconductor detector 10, and the gain of the amplifier circuit 20 is variable. Therefore, in the signal detection device 100, the intensity of the optical signal S4 (light) output by the light-emitting element 30 can be controlled.

[0048] The signal detection device 100 includes a control unit 70 that controls the gain of the amplifier circuit 20 based on the electrical signal S6 output by the light-receiving element 40. Therefore, in the signal detection device 100, since the gain of the amplifier circuit 20 can be controlled according to the luminance of the pixel, an image with a good S / N (signal noise ratio) (high SN ratio) can be obtained.

[0049] In the signal detection device 100, when the value based on the electrical signal S6 (luminance of the pixel) is smaller than the threshold value A and the gain G4 of the light receiving element 40 is smaller than the threshold value B, the control unit 70 increases the gain G4 of the light receiving element 40. When the value based on the electrical signal S6 is smaller than the threshold value A and the gain G4 of the light receiving element 40 is equal to or greater than the threshold value B, the control unit 70 increases the gain G2 of the amplifier circuit 20. Therefore, in the signal detection device 100, even if the electrical signal S2 output from the semiconductor detector 10 is small, not only the gain G4 of the light receiving element 40 can be increased, but also the gain G2 of the amplifier circuit 20 can be increased to increase the intensity of the optical signal S4 received by the light receiving element 40. Therefore, in the signal detection device 100, even when the intensity of the electrical signal S2 output from the semiconductor detector 10 is small, an image with a good S / N can be obtained. Even when the intensity is small, an image with a good S / N can be obtained.

[0050] In the signal detection device 100, the light emitting element 30 outputs white light as the optical signal S4. Here, the photomultiplier tube used as the light receiving element 40 has a sensitivity that depends on the wavelength, and the wavelength band with high sensitivity is determined. The wavelength band with high sensitivity varies depending on the type of photomultiplier tube. In the signal detection device 100, since the light emitting element 30 outputs white light as the optical signal S4, it can be compatible with various types of photomultiplier tubes having different wavelength bands with high sensitivity.

[0051] 2. Second Embodiment 2.1. Signal Detection Device Next, the signal detection device according to the second embodiment will be described with reference to the drawings. FIG. 3 is a diagram showing the configuration of the signal detection device 200 according to the second embodiment. Hereinafter, in the signal detection device 200 according to the second embodiment, members having the same functions as the constituent members of the signal detection device 100 according to the first embodiment are denoted by the same reference numerals, and detailed descriptions thereof are omitted.

[0052] In the above-described signal detection device 100, as shown in FIG. 1, the amplifier circuit 20 amplified the electrical signal S2 output from the semiconductor detector 10 using an amplifier 22 (operational amplifier). On the other hand, in the signal detection device 200, as shown in FIG. 3, the amplifier circuit 20 amplifies the electrical signal S2 output from the semiconductor detector 10 using a plurality of transistors.

[0053] The amplifier circuit 20 includes a first transistor 26, a second transistor 28, and a gain setting circuit 29. The gain setting circuit 29 includes a switch 251, a switch 252, and a switch 253.

[0054] The switch 251 connects the semiconductor detector 10 and the light emitting element 30. By turning on the switch 251, the semiconductor detector 10 and the light emitting element 30 are electrically connected, and the electrical signal S2 is not amplified.

[0055] The switch 252 connects the emitter of the first transistor 26 and the light emitting element 30. By turning on the switch 252, the emitter of the first transistor 26 and the light emitting element 30 are electrically connected, and the electrical signal S2 is amplified by the first transistor 26.

[0056] The switch 253 connects the emitter of the second transistor 28 and the light emitting element 30. By turning on the switch 253, the first transistor 26 and the second transistor 28 are connected in a Darlington configuration, and the electrical signal S2 is amplified more than when amplified by the first transistor 26.

[0057] 2.2. Operation of the Signal Detection Device The operation of the signal detection device 200 is the same as that of the signal detection device 100 described above, except that the control unit 70 controls the gain of the amplifier circuit 20 using the switch 251, the switch 252, and the switch 253, and the description thereof is omitted.

[0058] 2.3. Effects The signal detection device 200 can achieve the same operational effects as the signal detection device 100.

[0059] 3. Third Embodiment 3.1. Configuration of the Analyzer Next, the analyzer according to the third embodiment will be described with reference to the drawings. FIG. 4 is a diagram showing the configuration of the analyzer 300 according to the third embodiment.

[0060] The analyzer 300 is a scanning electron microscope. That is, the analyzer 300 can scan the sample S with the electron probe EP to obtain a scanning electron microscope image.

[0061] The analyzer 300 includes a signal detection device 100 in which the semiconductor detector 10 functions as a backscattered electron detector. The analyzer 300 further includes an electron source 310, a condenser lens 320, a scanning coil 330, an objective lens 340, a sample stage 350, and an image processing unit 360.

[0062] The electron source 310 emits an electron beam. The electron source 310 is, for example, an electron gun that accelerates electrons emitted from a cathode with an anode and emits an electron beam.

[0063] The condenser lens 320 and the objective lens 340 focus the electron beam emitted from the electron source 310 to form an electron probe EP. The probe diameter and the probe current can be controlled by the condenser lens 320. The condenser lens 320 and the objective lens 340 constitute an irradiation optical system for irradiating the sample S with the electron beam emitted from the electron source 310.

[0064] The scanning coil 330 deflects the electron probe EP two-dimensionally. By deflecting the electron probe EP two-dimensionally with the scanning coil 330, the sample S can be scanned with the electron probe EP.

[0065] The sample S is placed on the sample stage 350. The sample stage 350 can hold the sample S. The sample stage 350 has a moving mechanism for moving the sample S.

[0066] The semiconductor detector 10 functions as a backscattered electron detector. The semiconductor detector 10 is disposed, for example, under the objective lens 340 and detects backscattered electrons emitted from the sample S. The semiconductor detector 10 is an annular detector, and the electron beam irradiated onto the sample S passes through the center of the semiconductor detector 10. The signal processing unit 2 generates an image signal S8 based on the electrical signal S2 output from the semiconductor detector 10.

[0067] Although not shown, the analyzer 300 may include a secondary electron detector for detecting secondary electrons emitted from the sample S and an X-ray detector for detecting X-rays emitted from the sample S.

[0068] The image processing unit 360 generates a backscattered electron image based on the image signal S8 output from the signal processing unit 2. The image processing unit 360 includes, for example, a processor such as a CPU (Central Processing Unit) and a storage device such as a RAM (Random Access Memory) and a ROM (Read Only Memory). Programs and data for performing various processes are stored in the storage device. The functions of the image processing unit 360 can be realized by the processor executing programs.

[0069] 3.2. Operation of the Analyzer In the analyzer 300, a backscattered electron image can be acquired.

[0070] For example, the sample S is scanned with an electron probe EP, and backscattered electrons emitted from the sample S are detected by the semiconductor detector 10. The signal processing unit 2 generates an image signal S8 based on the electrical signal S2 output from the semiconductor detector 10. The image processing unit 360 stores the position information on the sample S in association with the image signal S8 (information on the luminance of pixels) and generates a backscattered electron image. The backscattered electron image is an image showing the distribution of the intensity of backscattered electrons.

[0071] 3.3. Effects Since the analyzer 300 includes the signal detection device 100 that can achieve high speed and low noise, a backscattered electron image with a good S / N can be obtained.

[0072] 3.4. Modification Example In the above-described third embodiment, the case where the analyzer 300 is a scanning electron microscope equipped with the signal detector 100 has been described. However, the analyzer 300 is not limited to this. The analyzer 300 may be other devices equipped with the signal detector 100.

[0073] 4. Others Note that the present invention is not limited to the above-described embodiments, and various modifications can be made within the scope of the gist of the present invention.

[0074] In the above-described embodiments, the case where the semiconductor detector 10 detects electrons has been described. However, the semiconductor detector 10 may detect signals such as ions and X-rays emitted from the sample.

[0075] The present invention is not limited to the above-described embodiments, and further various modifications are possible. For example, the present invention includes a configuration that is substantially the same as the configuration described in the embodiments. Substantially the same configuration means, for example, a configuration having the same functions, methods, and results, or a configuration having the same purpose and effects. In addition, the present invention includes a configuration in which a non-essential part of the configuration described in the embodiments is replaced. Further, the present invention includes a configuration having the same operating effects as the configuration described in the embodiments or a configuration capable of achieving the same purpose. Also, the present invention includes a configuration in which known techniques are added to the configuration described in the embodiments.

Explanation of Reference Numerals

[0076] 2…Signal processing unit, 10…Semiconductor detector, 20…Amplification circuit, 22…Amplifier, 24…Gain setting circuit, 26…First transistor, 28…Second transistor, 29…Gain setting circuit, 30…Light emitting element, 40…Light receiving element, 42…High voltage control circuit, 50…Current-voltage conversion circuit, 52…Operational amplifier, 54…Resistor, 60…A / D conversion circuit, 70…Control unit, 100…Signal detection device, 200…Signal detection device, 241…Switch, 242…Switch, 243…Switch, 244…Resistor, 245…Resistor, 251…Switch, 252…Switch, 253…Switch, 300…Analysis device, 310…Electron source, 320…Capacitor lens, 330…Scanning coil, 340…Objective lens, 350…Sample stage, 360…Image processing unit

Claims

1. A semiconductor detector that detects a signal from a sample, a light-emitting element that converts a first electrical signal output from the semiconductor detector according to a detection result of the signal from the sample into an optical signal, a light-receiving element that converts the optical signal converted by the light-emitting element into an electrical signal and amplifies it to output a second electrical signal, comprising: including an amplifier circuit that amplifies the first electrical signal, wherein a gain of the amplifier circuit is variable, and a signal detection device including a control unit that controls the gain of the amplifier circuit based on the second electrical signal.

2. In Claim 1, the control unit, when a value based on the second electrical signal is smaller than a first threshold value and a gain of the light-receiving element is smaller than a second threshold value, increases the gain of the light-receiving element, and when a value based on the second electrical signal is smaller than the first threshold value and the gain of the light-receiving element is equal to or greater than the second threshold value, increases the gain of the amplifier circuit, a signal detection device.

3. In Claim 1 or 2, the light-emitting element outputs white light as the optical signal, a signal detection device.

4. In any one of Claims 1 to 3, the light-receiving element is a photomultiplier tube, a signal detection device.

5. In any one of Claims 1 to 4, the signal from the sample is an electron, a signal detection device.

6. An analysis device including the signal detection device according to any one of Claims 1 to 5.

7. In Claim 6, an electron source, and an optical system that irradiates an electron beam emitted from the electron source onto the sample, comprising: the signal detection device detects electrons emitted from the sample, an analysis device.

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