Monolithic anisotropic substrate support

Abstract

The substrate support includes a monolithic anisotropic body having a first layer, a second layer, and an intermediate layer. The first layer is formed of a first material and has an RF electrode and a clamp electrode disposed therein. The second layer is formed of either the first material or a second material and has a heating element disposed therein. The intermediate layer is formed of a material different from the first and second layers, such that the thermal energy conductivity of the intermediate layer differs from that of at least one of the first material and the second material, and / or the electrical energy conductivity of the intermediate layer differs from that of at least one of the first material and the second material. The intermediate layer is disposed between the first layer and the second layer, or the second layer is disposed between the first layer and the intermediate layer.

Description

Technical Field

[0001] [Cross - Reference to Related Applications] This application claims the benefit of U.S. Provisional Application No. 62 / 923,912, filed Oct. 21, 2019. The entire disclosure of the above application is incorporated herein by reference.

[0002] This disclosure relates to an electrostatic chuck of a substrate processing system.

Background Art

[0003] The description of the background art herein is for the purpose of generally presenting the content of the present disclosure. The inventions of the presently named inventors are not to be regarded as prior art to the present disclosure, either expressly or implicitly, in the scope described in this background art section only and in aspects of the description that do not fall within the scope of what is considered prior art at the time of filing.

[0004] Monolithic A substrate support (e.g., Monolithic a pedestal or Monolithic an electrostatic chuck) may comprise a bulk ceramic body. An electrostatic clamp, a radio - frequency (RF) electrode, and one or more heaters are disposed in the bulk ceramic body. Monolithic The substrate support may be subject to local hot spots that change the speed of the process being performed on the substrate. Two causes of hot spots are insufficient dissipation of thermal energy and non - reproducible placement of heaters within the ceramic body.

[0005] A thick ceramic body can generally diffuse thermal energy more uniformly than a thin ceramic body. However, increasing the thickness of the ceramic body increases the amount of material used and the cost of materials and manufacturing. The increase in thickness also has an adverse effect on the placement reproducibility of internal components (e.g., electrodes and heating elements), and as a result, it can have an adverse effect on the throughput in the manufacture of the substrate support. For example, the raw material powder may change during manufacturing, and the placement of the internal components may change. The amount of change and / or the possibility of change increases as the ceramic body gets thicker. Also, the ceramic substrate support is susceptible to mechanical failure due to thermal stress.

Summary of the Invention

[0006] A substrate support is provided that includes a high-frequency electrode, a clamp electrode, a heating element, and Monolithic a non-cubic body (Heterogeneous body with an integral structure) is provided. Monolithic The non-cubic body includes a first layer, a second layer, and a first intermediate layer. The first layer is formed from a first material, and a high-frequency electrode and a clamp electrode are disposed therein. The second layer is formed from the first material or a second material, and a heating element is disposed therein. The first intermediate layer is formed of a material different from the first layer and the second layer such that at least one of its thermal energy conductivity is different from the thermal energy conductivity of at least one of the first material and the second material, and its electrical energy conductivity is different from the electrical conductivity of at least one of the first material and the second material. The first intermediate layer is disposed between the first layer and the second layer, or the second layer is disposed between the first layer and the first intermediate layer.

[0007] In other features, the first intermediate layer is formed of a material different from the first layer and the second layer such that the thermal energy conductivity of the first intermediate layer is different from the thermal energy conductivity of at least one of the first material and the second material, and the electrical energy conductivity of the first intermediate layer is different from the electrical conductivity of at least one of the first material and the second material.

[0008] In other features, the first intermediate layer is formed of a material different from the first layer and the second layer such that at least one of the thermal energy conductivity of the first intermediate layer is different from the thermal energy conductivities of the first material and the second material, and the electrical energy conductivity of the first intermediate layer is different from the electrical conductivities of the first material and the second material.

[0009] In other features, the coefficient of thermal expansion of the first intermediate layer is different from the coefficient of thermal expansion of at least one of the first material and the second material.

[0010] In other features, the first intermediate layer has an inner portion and an outer portion. The inner portion is formed of a material different from the first layer and the second layer. The outer portion is formed of the first material or the second material.

[0011] In other features, the substrate support further includes a metal layer disposed between the first intermediate layer and the second layer. In other features, the metal layer is implemented as a metal screen or a metal mesh.

[0012] In other features, the second layer is formed of the first material. In other features, the first intermediate layer includes an inner portion covered by a coating layer and an outer portion surrounding the inner portion.

[0013] In other features, the first intermediate layer Monolithic comprises a solid structure having at least one of a density, a porosity per unit area, or a number of cracks per unit area different from those of the first layer, the second layer, and the first intermediate layer in the form of a hexahedron.

[0014] In other features, the first intermediate layer Monolithic comprises a solid structure compacted prior to the compaction of the first layer, the second layer, and the first intermediate layer to form a hexahedron.

[0015] In other features, the substrate support further comprises a second intermediate layer disposed below the second layer and formed of a material different from that of the first layer and the second layer. As a result, the thermal energy conductivity of the second intermediate layer is different from the thermal energy conductivity of at least one of the first material and the second material, and the electrical energy conductivity of the second intermediate layer is different from the electrical conductivity of at least one of the first material and the second material, at least one of which is satisfied.

[0016] In other features, the second intermediate layer has an inner portion and an outer portion. The inner portion is formed of a material different from that of the first layer and the second layer. The outer portion is formed of the first material or the second material.

[0017] In other features, the substrate support further comprises a first metal layer disposed between the first intermediate layer and the second layer, and a second metal layer disposed between the second layer and the second intermediate layer.

[0018] In other features, the first intermediate layer comprises a first inner portion covered by a first coating layer and a first outer portion surrounding the first inner portion. The second intermediate layer comprises a second inner portion covered by a second coating layer and a second outer portion surrounding the second inner portion.

[0019] In other features, the first intermediate layer comprises a first solid structure, and the second intermediate layer comprises a second solid structure. The first solid structure and the second solid structure Monolithic have at least one of a density, a porosity per unit area, or a number of cracks per unit area different from those of the first layer, the second layer, the remaining portion of the first intermediate layer, and the remaining portion of the second intermediate layer of the anisotropic body.

[0020] In other features, the first intermediate layer comprises a first solid structure, and the second intermediate layer comprises a second solid structure, and they are Monolithic consolidated prior to the consolidation of the first layer, the second layer, the first intermediate layer, and the second intermediate layer to form an anisotropic body.

[0021] In other features, Monolithic The anisotropic body is formed in the same manner as the heating element and has a hollow internal region that constrains the heating element. In other features, Monolithic The anisotropic body Monolithic is provided with a fixture for restricting the movement of the heating element relative to the anisotropic body. In other features, the first intermediate layer includes at least one of a ring and a void.

[0022] In other features, the first intermediate layer includes voids filled with an insulating gas or a conductive fluid. In other features, Monolithic The anisotropic body is provided with vertically extending beams. The beams are formed of a material different from that of the first layer and the second layer.

[0023] In other features, a method of forming a substrate support is provided. The method includes arranging a first material and a first object in a first mold to form an initial preform, sintering the initial preform to provide a first initial internal structure, arranging the first initial internal structure, a second material, and a second object in a second mold to form a final preform, and sintering the final preform to provide a substrate support. The first object and the second object include a heating element, a clamp electrode, and a high-frequency electrode.

[0024] In other features, the method further includes applying pressure to the initial preform at least either before or during sintering of the initial preform. In other features, the method further includes not applying pressure to the initial preform at least either before or during sintering of the initial preform. In other features, the method further includes applying pressure to the final preform at least either before or during sintering of the final preform.

[0025] In other features, this method further includes a step of not applying pressure to the final preform, either before or during sintering of the final preform. In other features, this method further includes a step of forming an internal structure including an initial internal structure. The formation of the final preform includes a step of disposing the internal structure in a second mold.

[0026] In other features, this method further includes a step of intensively disposing a first initial internal structure, and at least one of a third material and a third object in a third mold to form an intermediate preform, and a step of sintering the intermediate preform to form an intermediate internal structure. The formation of the final preform includes a step of disposing the intermediate internal structure in a second mold.

[0027] In other features, this method further includes a step of processing the initial internal structure before forming the final preform and disposing the initial internal structure in a second mold. In other features, the substrate support has a green sheet structure. In other features, the formation of the initial preform includes the formation of a laminate.

[0028] In other features, a substrate support including a high-frequency electrode, a clamp electrode, a heating element, and Monolithic a non-regular body is provided. Monolithic The non-regular body includes one or more first layers formed of a first material and having a high-frequency electrode and a clamp electrode, one or more second layers formed of the first material or a second material and having a heating element, and a first intermediate layer. The first intermediate layer is disposed between the one or more first layers and the one or more second layers, and the thermal energy conductivity of the first intermediate layer is different from the thermal energy conductivity of at least one of the first material and the second material, and the electrical energy conductivity of the first intermediate layer is different from the electrical conductivity of at least one of the first material and the second material, and is formed of a material different from the one or more first layers and the one or more second layers so as to be at least one of them.

[0029] In other features, the first intermediate layer is formed of a material different from at least one of the thermal energy conductivity of the first material and the second material, and the electrical energy conductivity of the first intermediate layer is different from the electrical conductivity of at least one of the first material and the second material.

[0030] In other features, the first intermediate layer is formed of a material different from one or more first layers and one or more second layers such that at least one of the thermal energy conductivity of the first intermediate layer is different from the thermal energy conductivity of the first material and the second material, and the electrical energy conductivity of the first intermediate layer is different from the electrical conductivity of the first material and the second material.

[0031] In other features, the coefficient of thermal expansion of the first intermediate layer is different from the coefficient of thermal expansion of at least one of the first material and the second material.

[0032] In other features, the first intermediate layer has an inner portion and an outer portion. The inner portion is formed of a material different from one or more first layers and one or more second layers. The outer portion is formed of the first material or the second material.

[0033] In other features, the substrate support further has a metal layer disposed between the first intermediate layer and one or more second layers. In other features, the metal layer is implemented as a metal screen or a metal mesh. In other features, one or more second layers are formed of the first material.

[0034] In other features, the first intermediate layer includes an inner portion covered by a first coating layer and an outer portion surrounding the inner portion. In other features, the first intermediate layer Monolithic To form a heterogeneous body, it includes a solid structure body that has been consolidated before consolidating one or more first layers, one or more second layers, and the first intermediate layer.

[0035] In other features, the substrate support further comprises a second intermediate layer disposed below one or more second layers and formed of a material different from that of the one or more first layers and the one or more second layers. As a result, the thermal energy conductivity of the second intermediate layer is different from the thermal energy conductivity of at least one of the first material and the second material, and / or the electrical energy conductivity of the second intermediate layer is different from the electrical conductivity of at least one of the first material and the second material.

[0036] In other features, the second intermediate layer comprises an inner portion and an outer portion. The inner portion is formed of a material different from that of the one or more first layers and the one or more second layers, and the outer portion is formed of the first material or the second material.

[0037] In other features, the substrate support further comprises a first metal layer disposed between the first intermediate layer and the one or more second layers, and a second metal layer disposed between the one or more second layers and the second intermediate layer.

[0038] In other features, the first intermediate layer comprises a first inner portion covered by a first coating layer and a first outer portion surrounding the first inner portion. The second intermediate layer comprises a second inner portion covered by a second coating layer and a second outer portion surrounding the second inner portion.

[0039] In other features, the first intermediate layer comprises a first solid structure, and the second intermediate layer comprises Monolithic a second solid structure compacted prior to the compaction of the one or more first layers, the one or more second layers, the first intermediate layer, and the second intermediate layer to form a hexahedron. In other features, Monolithic the hexahedron is shaped like a heating element and has a hollow internal region that constrains the heating element. In other features, Monolithic the hexahedron Monolithic comprises a fixture for restricting the movement of the heating element relative to the hexahedron.

[0040] In other features, the first intermediate layer comprises at least one of a ring and voids. In other features, the first intermediate layer comprises voids filled with an insulating gas or a conductive fluid.

[0041] In other features, Monolithic The hexahedron comprises vertical beams, and the beams are formed of a material different from one or more first layers and one or more second layers.

[0042] In other features, a high-frequency electrode, a clamp electrode, a heating element, and Monolithic A substrate support comprising a hexahedron is provided. Monolithic The hexahedron is formed of a first material and comprises one or more first layers having a high-frequency electrode and a clamp electrode, one or more second layers formed of the first material or a second material and having a heating element, and an intermediate layer. The intermediate layer is formed of a material different from one or more first layers and one or more second layers such that at least one of the thermal energy conductivity of the intermediate layer is different from the thermal energy conductivity of at least one of the first material and the second material, and the electrical energy conductivity of the intermediate layer is different from the electrical conductivity of at least one of the first material and the second material. One or more second layers are disposed between one or more first layers and the intermediate layer.

[0043] In other features, the intermediate layer is formed of a material different from one or more first layers and one or more second layers such that the thermal energy conductivity of the intermediate layer is different from the thermal energy conductivity of at least one of the first material and the second material, and the electrical energy conductivity of the intermediate layer is different from the electrical conductivity of at least one of the first material and the second material.

[0044] In other features, the intermediate layer is formed of a material different from one or more first layers and one or more second layers such that at least one of the thermal energy conductivity of the intermediate layer is different from the thermal energy conductivity of the first material and the second material, and the electrical energy conductivity of the intermediate layer is different from the electrical conductivity of the first material and the second material.

[0045] In other features, the thermal expansion coefficient of the intermediate layer is different from the thermal expansion coefficient of at least one of the first material and the second material. In other features, the intermediate layer has an inner portion and an outer portion. The inner portion is formed of a material different from the one or more first layers and the one or more second layers. The outer portion is formed of the first material or the second material.

[0046] In other features, the substrate support further includes a metal layer disposed between the intermediate layer and the one or more first layers or the one or more second layers. In other features, the metal layer is implemented as a metal screen or a metal mesh. In other features, the one or more second layers are formed of that material. In other features, the intermediate layer includes an inner portion covered by a coating layer and an outer portion surrounding the inner portion.

[0047] In other features, the intermediate layer Monolithic includes a solid structure that is consolidated prior to the consolidation of the one or more first layers, the one or more second layers, and the intermediate layer to form a heterogeneous body. In other features, Monolithic the heterogeneous body is shaped like a heating element and has a hollow internal region that constrains the heating element. In other features, Monolithic the heterogeneous body Monolithic includes a fixture for restricting the movement of the heating element relative to the heterogeneous body. In other features, the intermediate layer includes at least one of a ring and a void. In other features, the intermediate layer includes a void filled with an insulating gas or a conductive fluid.

[0048] In other features, Monolithic the heterogeneous body includes vertically extending beams. The beams are formed of a material different from the one or more first layers and the one or more second layers.

[0049] In another aspect, a method of forming a substrate support is provided. The method includes arranging a first material and one or more first objects in a first mold to form an initial preform; sintering the initial preform to provide a first initial internal structure; performing a second preform operation that includes arranging the first initial internal structure, a second material, and one or more second objects in a second mold to form a final preform; and sintering the final preform to provide a substrate support. The one or more first objects and the one or more second objects include heating elements, clamp electrodes, and RF electrodes.

[0050] In another aspect, the method further includes applying pressure to the initial preform either before or during sintering of the initial preform. In another aspect, the method further includes not applying pressure to the initial preform either before or during sintering of the initial preform. In another aspect, the method further includes applying pressure to the final preform either before or during sintering of the final preform. In another aspect, the method further includes not applying pressure to the final preform either before or during sintering of the final preform.

[0051] In another aspect, the method further includes forming an internal structure that includes the initial internal structure. The second preform operation includes placing the internal structure in the second mold.

[0052] In another aspect, the method further includes arranging the first initial internal structure, and at least one of a third material and one or more third objects in a third mold to form an intermediate preform; and sintering the intermediate preform to form an intermediate internal structure. The second preform operation includes placing the intermediate internal structure in the second mold.

[0053] In other features, the method further includes a step of processing the initial internal structure before performing a second preform operation to place the initial internal structure in a second mold. In other features, the substrate support has a green sheet structure. In other features, the first preform operation includes a step of forming a laminate.

[0054] Further applicable fields of the present disclosure will become apparent from the embodiments for carrying out the invention, the claims, and the drawings. The embodiments for carrying out the invention and specific examples are intended for illustrative purposes only and are not intended to limit the scope of the present disclosure.

Brief Description of the Drawings

[0055] The present disclosure will be more deeply understood from the embodiments for carrying out the invention and the accompanying drawings.

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[0067] In the drawings, reference numerals may be repeatedly used to identify similar and / or identical elements.

DETAILED DESCRIPTION OF THE INVENTION

[0068] The ceramic substrate support formed by "hot pressing" is troubled by limited capacity. During hot pressing, materials (e.g., powders) and other elements (such as electrodes and heating elements) are placed in a mold to provide a preform. The temperature of the preform and the pressure applied to the preform are increased so that the preform is sintered to provide a solid single body (or substrate support). During hot pressing, the material creeps and fuses into a solid. The resulting structure of the ceramic substrate support is restricted by the mass of the preform, which is limited by the capacity of the mold and the density of the preform before sintering.

[0069] The heating element integrated ceramic electrostatic chuck is troubled by the electrical energy loss from the electronic conductivity between the heating element and the clamp electrode and RF electrode (collectively, "electrodes"). Due to the short circuit between the electrode and the heating element, a large amount of clamp voltage and / or power is often dissipated. The electrical loss may limit the clamp voltage that can be applied and require a power supply that provides a specific voltage and a higher output current level than otherwise required.

[0070] The examples described herein include Monolithic an anisotropic substrate support. Monolithic The anisotropic substrate support is formed so that heat energy diffusion is improved compared to conventional Monolithic substrate supports. The examples include layers formed of different materials having different electrical conductivity and / or thermal conductivity. These layers may include electrical components, voids, flow paths, powders, structural elements (e.g., plates, rings, beams, voids, etc.), pre-sintered bodies and / or pre-pressed bodies, and / or other items, and are formed by sintering a preform. The preform may be sintered by hot pressing as described above.

[0071] The examples provide improved heat energy diffusion throughout the substrate support. The resulting layers of the substrate support have different materials and / or structures to provide improved heat energy diffusion within a given total thickness of the substrate support. The examples also prevent electrical dissipation between the conductive elements of the substrate support.

[0072] Figure 1 shows a substrate processing system 100 including a substrate support shown as ESC101. ESC101 may be configured in the same or similar manner as any substrate support disclosed herein, including the substrate supports shown in FIGS. 2-9. Although FIG. 1 shows a capacitively coupled plasma (CCP) system, the embodiments disclosed herein are applicable to transformer coupled plasma (TCP) systems, inductively coupled plasma (ICP) systems, and / or Monolithic other systems and plasma sources including a substrate support. The present embodiment is applicable to plasma enhanced chemical vapor deposition (PECVD) processes, chemically enhanced plasma vapor deposition (CEPVD) processes, atomic layer deposition (ALD) processes, and / or other processes where the substrate temperature is 450° C. or higher. ESC101 includes Monolithic a body 102. The body 102 may be formed of different materials and / or different ceramic compositions. The body 102 may include, for example, aluminum nitride (AlN3), aluminum oxide (Al2O3), and / or aluminum oxynitride (AlON).

[0073] The substrate processing system 100 includes a processing chamber 104. ESC101 is surrounded by the processing chamber 104. The processing chamber 104 also surrounds other components such as an upper electrode 105 and includes RF plasma. During operation, the substrate 107 is placed on ESC101 and electrostatically clamped. By way of example only, the upper electrode 105 may include a showerhead 109 for introducing and distributing gas. The showerhead 109 may include a stem portion 111 having one end connected to the upper surface of the processing chamber 104. The showerhead 109 is generally cylindrical and extends radially outward from the other end of the stem portion 111 at a position away from the upper surface of the processing chamber 104. The substrate facing surface of the showerhead 109 includes holes through which process gas or purge gas flows. Alternatively, the upper electrode 105 may include a conductive plate and the gas may be introduced by another method.

[0074] The ESC 101 may include a temperature control element (TCE), also referred to as a heating element. As an example, FIG. 1 shows an ESC 101 that includes a heating element 110. The heating element 110 receives power and heats the ESC 101. In one embodiment, the ESC 101 includes one or more gas flow paths 115 for flowing backside gas on the back surface of the substrate 107.

[0075] The RF generation system 120 generates an RF voltage and outputs it to the upper electrode 105 and one or more lower electrodes 116 in the ESC 101. Either the upper electrode 105 or the ESC 101 may be DC grounded, AC grounded, or at a floating potential. By way of example only, the RF generation system 120 may include one or more RF generators 122 (e.g., a capacitively coupled plasma RF power generator, a bias RF power generator, and / or other RF power generators) that generate an RF voltage supplied to the upper electrode 105 and / or the ESC 101 by one or more matching and distribution networks 124. Electrodes that receive an RF signal, RF voltage, and / or RF power are referred to as RF electrodes. As an example, a plasma RF generator 123, a bias RF generator 125, a plasma RF matching network 127, and a bias RF matching network 129 are shown. The plasma RF generator 123 may be a high-power RF generator that generates, for example, 6 to 10 kilowatts (kW) or more of power. The bias RF matching network supplies power to an RF electrode such as the RF electrode 116.

[0076] The gas supply system 130 includes one or more gas sources 132-1, 132-2, ···, and 132-N (collectively, gas source 132) (N is an integer greater than zero). The gas source 132 supplies one or more precursors and their gas mixtures. The gas source 132 may also supply an etching gas, a carrier gas, and / or a purge gas. Vaporized precursors may be used. The gas source 132 is connected to the manifold 140 by valves 134-1, 134-2, ···, and 134-N (collectively, valve 134), and mass flow controllers 136-1, 136-2, ···, and 136-N (collectively, mass flow controller 136). The output of the manifold 140 is supplied to the processing chamber 104. By way of example only, the output of the manifold 140 is supplied to the showerhead 109.

[0077] The substrate processing system 100 further includes a heating system 141 having a temperature control device 142 that can be connected to the heating element 110. The temperature control device 142 controls a power supply 144 that supplies power to the heating element 110. Although the temperature control device 142 is shown separately from the system controller 160, it may be implemented as part of the system controller 160. The ESC 101 may include a plurality of temperature-controlled zones, each zone having a temperature sensor and a heating element. The temperature control device 142 may monitor the temperature indicated by the temperature sensor and adjust the current, voltage, and / or power to the heating element to adjust the temperature to a target temperature. The power supply 144 may provide power including a high voltage to the clamp electrode 131 to electrostatically clamp the substrate 107 to the ESC 101. The clamp electrode receives the power and electrostatically clamps the substrate 107 to the ESC 101. The power supply 144 may be controlled by the system controller 160.

[0078] The substrate processing system 100 further includes a cooling system 150 having a backside vacuum control device 152. The backside vacuum control device 152 may receive gas from the manifold 140 and supply the gas to the flow path 115 and / or the pump 158. Thereby, the heat energy transfer between the substrate support 101 and the substrate 107 is improved. The backside gas may be provided to improve the substrate edge purge and the vacuum tracking of the substrate position. The flow path 115 may be supplied by one or more inlets. In one embodiment, a plurality of inlets are provided for improved cooling. By way of example, the backside gas may include helium.

[0079] The temperature control device 142 may control the temperature of the heating element by controlling its operation, and as a result, control the temperature of the substrate (e.g., substrate 107). The temperature control device 142 controls the current supplied to the heating element based on the detected parameters from the temperature sensor 143 within the processing chamber 104. The backside vacuum control device 152 controls the flow rate of the backside gas (e.g., helium) to the gas flow path 115 for cooling the substrate 107 by controlling the flow from one or more gas sources 132 to the gas flow path 115. The backside vacuum control device 152 controls the pressure and flow rate of the gas supplied to the flow path 115 based on the detected parameters from the temperature sensor 143. In one embodiment, the temperature control device 142 and the backside vacuum control device 152 are implemented as an integrated single control device.

[0080] The temperature sensor 143 may include a resistance temperature device, a thermocouple, a digital temperature sensor, and / or other suitable temperature sensors. During the deposition process, the substrate 107 may be heated in the presence of high-power plasma. The gas flow through the flow path 115 may reduce the temperature of the substrate 107.

[0081] Valve 156 and pump 158 may be used to discharge reactants from the processing chamber 104. The system controller 160 may control the components of the substrate processing system 100, including controls such as the supplied RF power level, the pressure and flow rate of the supplied gas, and RF matching. The system controller 160 controls the states of valve 156 and pump 158. The robot 164 may be used to supply substrates to the ESC 101 and remove them from the ESC 101. For example, the robot 164 may transfer substrates between the ESC 101 and the load lock 166. The robot 164 may be controlled by the system controller 160. The system controller 160 may control the operation of the load lock 166.

[0082] The valves, gas pumps, power supplies, RF generators, etc. described in this specification may be referred to as actuators. The heating elements, gas flow paths, etc. described in this specification may be referred to as temperature control elements.

[0083] In the example of the figure, ESC 101 is Monolithic a multilayer structure and / or a layered structure having the anisotropic body 102. Monolithic The anisotropic body 102 is a solid Monolithic structure that can operate at high temperatures and does not need to be cooled to a temperature below the ambient temperature. MonolithicThe anisotropic body 102 comprises five material layers as shown in the figure, with two intermediate material layers 170 disposed between three material layers 172. The five layers 170 and 172 are arranged in a stack. The first (radially outer) portion 174 of the layer 170 may be integrally formed with the layer 172. In one embodiment, the second (inner disc-shaped) portion 176 of the layer 170 is formed of a material different from that of the layer 172, while the first portion 174 is formed of the same material as the layer 172. The first portion 174 may be ring-shaped and surround the second portion 176. The portion 176 may be used to (i) separate the heating element 110 from the electrodes 116 and 131 in the region below the substrate 107, (ii) provide improved heat energy diffusion, (iii) dissipate power, and / or prevent a short circuit of power from the electrodes 116 and 131 to the heating element 110. Thereby, more uniform heating is provided by the entire substrate 107, power loss is prevented, and the use of a smaller power source becomes possible.

[0084] By way of example, the layer 172, the first portion 174, and the second portion 176 may be formed of one or more ceramic compositions, for example, may include aluminum nitride (AlN3), aluminum oxide (Al2O3), and / or aluminum oxynitride (AlON). The layer 172, the first portion 174, and the second portion 176 may have different compositions and / or may be formed of different materials. The second portion 176 may have heat energy diffusion characteristics that are better or worse than those of the layer 172 and the portion 174 within a predetermined total thickness of the corresponding substrate support.

[0085] As an example, to increase the thermal conductivity of the second portion 176 with respect to the layer 172 and the first portion 174, the second portion 176 may include calcium oxide (CaO), yttrium oxide (Y2O3), cerium oxide (Ce2O3), yttrium fluoride (YF3), and / or combinations thereof. The thermal conductivity may be increased, for example, by reducing the oxygen content during sintering of AlN3. The oxygen content may be reduced using (i) Y2O3 and (ii) a nitrogen reducing atmosphere containing carbon. As another example, to reduce the thermal conductivity of the second portion 176 with respect to the layer 172 and the first portion 174, when the layers 170 and 172 are formed of AlN3, the second portion 176 may be partially oxidized and / or one or more materials (e.g., aluminum oxide (Al2O3), silicon carbide (SiC), silicon nitride (SiN), and / or aluminum carbide (Al4C3)) may be decomposed in the second portion 176.

[0086] The layer 172 and the portions 174 and 176 may be formed to include additives having different properties to affect the thermal conductivity and / or electrical conductivity of the corresponding layers and / or portions. The layer 172 and the portions 174 and 176 may be formed of AlN3, and the portion 176 may have additives different from those of the layer 170 and the portion 174. By forming the layer 172 and the portions 174 and 176 of similar materials, the layers 170 and 172 will reliably react similarly to changes in the temperature and power supplied to the heating element 110. As a result, the possibility of cracking of the substrate support due to changes in the temperature and power supplied to the heating element 110 is reduced. The layer 172 and the portions 174 and 176 may be formed to include (i) a glass additive for transient liquid phase sintering, (ii) magnesium oxide (MgO), and / or (iii) other additives.

[0087] In one embodiment, the portion 176 is formed before the materials for forming the layer 172 and the portion 174 are included. The material used to form the portion 176 is sintered to form a disk-shaped plate, and then other materials are included together to form the layer 172 and the portion 174 as a preform. The preform is then sintered to form the final solid object.

[0088] In the example of the figure, the electrodes 116 and 131 are disposed on the uppermost layer of the layer 172. The heating element 110 is disposed in the second (or middle) layer of the layer 172. In one embodiment, the heating element 110 is circular and / or disk-shaped. The heating element 110 may include an upper electrode 175 and a bottom electrode 177 that are connected to each other along their peripheral edges. In one embodiment, the upper electrode 175 and the bottom electrode 177 are circular, disk-shaped, and / or in a perforated state. Although one heating element 110 is shown, the ESC 101 may be provided with any number of heating elements. The heating elements may have different sizes and shapes, provide corresponding heating patterns, and be distributed to each heating zone of the ESC 101. One layer of the layer 170 is disposed between the electrodes 116 and 131 and the heating element 110. Another layer of the layer 170 is disposed below the heating element 110.

[0089] The layers 172 and 174 may be formed of a high heat energy conductivity material. In one embodiment, the portion 176 has a lower heat energy conductivity than the layer 172 and the portion 174. As yet another example, the portion 176 may be formed of a material having a higher electrical resistance than the surrounding ceramic material. This is implemented to prevent a short circuit between the electrode and the heating element, prevent power loss, save energy, and enable the use of a smaller power source.

[0090] In another embodiment, the portion 176 is formed of pure AlN3, functions as a separation layer, and has a greater resistance than the surrounding AlN3 layer of lower purity. The surrounding AlN3 layer at least partially includes a material different from the portion 176. In another embodiment, the portion 176 is formed of AION, which has a greater resistance than the material surrounding the layers 172 and 174 formed of AlN3. In the described embodiment, AlN3 has a lower thermal energy conductivity than the portion 176 formed of AION. AION has a different coefficient of thermal expansion from AlN3.

[0091] The portion 176 may be sintered to the theoretical density ratio to improve adhesion during hot pressing. The sintered portion 176 is machined into a predetermined geometry and may then be surface treated and / or coated to improve adhesion to the surrounding material (e.g., the material used to form the layers 172 and 174). The preform may be formed to include (i) the machined portion 176, (ii) other internal structures (RF electrodes, clamp electrodes, heating elements, etc.), and (iii) the material (e.g., powder) for forming the layers 172 and 174. The machined portion and the internal structures may be embedded in the compacted powder (the material used to form the layers 172 and 174). The compacted powder may have a higher thermal energy conductivity than the portion 176.

[0092] In one embodiment, the thermal energy conductivity from the center to the periphery of the layer 172 is the same. For the same embodiment, the thermal energy conductivity of the portion 176 is the same from the center to the periphery. However, the thermal energy conductivity of the layer 172 is different from the thermal energy conductivity of the portion 176.

[0093] As described above, the preform finally formed to form the substrate support may be formed of multiple layers. This may be achieved by providing a green sheet structure in which the powder as well as any internal plates and / or other structural elements are thermally pressed to bond as the structure sinters to a value equal to or close to the logical density value of the corresponding ceramic material. The logical density is a parameter indicating and / or used to evaluate the porosity of the ceramic material after sintering. When forming the green sheet structure, the powder may be densely packed or loosely packed. A part of the green sheet structure may be consolidated (e.g., pre-sintered, bonded, joined, and / or integrated) prior to the final consolidation of the entire green sheet structure to form a single solid structure.

[0094] Sintering may be carried out any number of times to ensure proper placement of the internal components. Ceramic plates, wiring, electrodes, and / or other structural elements and circuit components may be added, for example, together with the ceramic powder during each sintering step performed. By sintering some of the layers and / or structural elements before forming the preform of the substrate support, it becomes possible to more densely fill the hot press mold. This enables more accurate placement of the circuit components and minimizes the amount of movement during the final sintering step. An example of the above method is described below in relation to FIG. 11.

[0095] In one embodiment, the upper portion of the portion 176 has low electrical conductivity and the lower portion of the portion 176 has high electrical conductivity.

[0096] Although each of the ESCs in FIGS. 1-9 is shown to have certain features and not others, each ESC may be modified to include any of the features disclosed herein and in FIGS. 1-9.

[0097] FIG. 2 shows an anisotropic substrate support 200 having a multilayer structure and / or a layered structure including a layer 202 that may be similar to the layer 172 of FIG. 1. Monolithic Monolithic ​The anisotropic substrate support 200 further includes a layer 204 having an inner portion 205 that may be similar to layer 170 of FIG. 1. The inner portion 205 is formed of and / or includes a material different from and / or a part of layer 204 surrounding portion 205. 202 Monolithic The anisotropic substrate support 200 may include electrodes 116 and 131 and heating element 110, and / or other electrodes and heating elements. Monolithic The anisotropic substrate support 200 further includes metal layers 210 and 212. The metal layers 210 and 212 actually provide a Faraday cage to prevent back surface discharge between electrodes 116 and 131 and substrate 214. Metal layer 210 may electrically shield the top surface of substrate support 200 from heating element 110. Metal layer 212 may electrically shield the bottom surface of substrate support 200 from heating element 110.

[0098] Although metal layers 210 and 212 are shown in specific positions relative to other layers 202 and 204 and heating element 110, they may be in other positions. Metal layers 210 and 212 may be combined to help dissipate heat. Metal layers 210 and 212 may have a relatively uniform temperature while dissipating thermal energy. In one embodiment, layers 210 and 212 are formed of a material having high thermal conductivity. Layers 210 and 212 help prevent hot spots from occurring in substrate support 200 and substrate 214 disposed thereon.

[0099] In one embodiment, the metal layers 210 and 212 are implemented as a disc-shaped metal screen or metal mesh. The metal layers 210 and 212 may be formed using metal screen printing and / or may include a stack of a plurality of metal layers that result in a composite structure. The metal layers 210 and 212 may be implemented as perforated plates. In the example of the figure, the metal layer 210 is disposed between the heating element 110 and the upper layer of the layer 204. The metal layer 212 is disposed between the heating element and the lower layer of the layer 204. The portion of the substrate support 200 surrounding the layers 210 and 212 may be formed of the same or a similar material as the portion of the substrate support 200 surrounding the layer 202 and / or the layer 204. The bottom layer of the layer 204 and the metal layer 212 may include openings for the passage of the conductor 220 that provides power to the heating element 110 and receives power from the heating element 110.

[0100] FIG. 3 shows an anisotropic substrate support 300 having a multilayer structure and / or a layered structure including a layer 302 that may be similar to the layer 172 of FIG. 1. Monolithic Monolithic The anisotropic substrate support 300 further includes a layer 304 that may be similar to the layer 170 of FIG. 1. The inner portion 305 of the layer 304 is formed of a material different from and / or including the material of the layer 302 and / or a part of the layer 304 surrounding the portion 305. Monolithic The anisotropic substrate support 300 may include electrodes 116 and 131 and a heating element 110 and / or other electrodes and heating elements. In the example of the figure, the inner portion 305 of the layer 304 is coated with an additive and / or modified by a chemical surface treatment that locally changes the thermal conductivity of the surrounding (or coating) material. The portion 305 has an outer coating layer 310. The portion 305 may be disposed inside the outer coating layer 310. The outer coating layers 310 each enclose the portion 305.

[0101] In one embodiment, the portion 305 is implemented as a plate formed of a material having high thermal energy conductivity. This plate may be formed of a ceramic material. In another embodiment, the plate has a solid that is selected to react with or dissolve in the surrounding ceramic material during sintering. The coating layer 310 is formed of a material selected to increase or decrease the concentration of atoms of the solid solution in the ceramic, thereby changing the local thermal conductivity of the plate and providing a layered structure. In one embodiment, the coating on the portion 305 reacts with the surrounding ceramic during sintering to form a reaction layer having unique properties. As a result, the number of layers per plate is tripled. The bottom of the portion 305 and the corresponding outer coating layer 310 may include an opening for the passage of the conductor 320 that provides current to and receives current from the heating element 110.

[0102] In addition to and / or instead of the portions 205 and 305 of FIGS. 2-3, a sheet of solids may be used to constrain the relative positions of substrate support components (e.g., RF electrodes, clamp electrodes, heating elements, etc.) to improve repeatable placement of the components during manufacture of the corresponding substrate support. The sheet may be configured similarly to the portions 205 and 305. In one embodiment, the sheet extends around the substrate support, unlike the examples of the portions 205 and 305 of the figures. The substrate supports disclosed herein may have any number of layers and sheets of solids.

[0103] In FIGS. 2-3, the pre-sintered plates 205 and 305 may be disposed proximate to the plane of the heater circuit, each plane including portions of one or more heating elements. This proximate placement may be provided to reduce the effect of initial concentration changes at the final position of the heating element after sintering.

[0104] One or more ceramic material layers having a high electrical resistivity at the operating temperature (e.g., 111 ohm meters (Ωm) at 650° C.) may be disposed between the clamp electrode 131 and the heating element 110. The operating temperature may be higher than the surrounding ceramic bulk material (e.g., 19 Ωm at 650° C.). By way of example, one or more of the plates 205 and 305 may be formed of a ceramic material having a high electrical resistivity. This prevents electrical losses from the clamp electrode 131 and / or the RF electrode 116 to the heating element 110.

[0105] FIG. 4 shows an anisotropic substrate support 400 having a multilayer structure and / or a layered structure and providing a constrained form. Monolithic The substrate support 400 includes a base 402 shaped to receive the heating element 110. The substrate 402 is formed of a ceramic material and may include grooves and / or other recesses, flow channels, concave regions, etc., shaped to fit and / or hold one or more heating elements. In the example of the figure, the ceramic plate 402 has a hollow interior region 404 shaped to fit the shape of the heating element 110. The heating element 110 is disposed within the hollow interior region 404 and constrained by the base 402. In one embodiment, the base 402 is shaped to receive the heating element 110 in the designed form of the heating element. In another embodiment, the heating element is fixed to the ceramic base by an adhesive material.

[0106] FIG. 5 shows a structure having a multilayer structure and / or a layered structure, providing a constrained form, and having a fastener 502. MonolithicAnisotropic substrate support 500 is shown. Any number of fasteners may be provided. Substrate support 500 is similar to substrate support 400 of FIG. 4, except that it includes fastener 502. Fastener 502 may be implemented as a knob as shown in the figure, or may be implemented as a hook, block, guide, etc. that restricts the movement of at least a part of heating element 110 and / or other heating elements relative to base 504. Base 504 may be formed of ceramic and has a hollow internal region 506 shaped to fit the shape of heating element 110. Fastener 502 may have different shapes and sizes. Different types of fasteners may be provided, and the fasteners may suppress and / or limit the movement of at least respective portions of heating element 110 relative to base 504.

[0107] In another embodiment, heating element 110 is fixed to base 504 by an adhesive. In another embodiment, a sinterable preform of the material may be fixed to base 504 before installation in a mold, may be used as a fastener, and may be shaped to constrain the position of at least a part of heating element 110.

[0108] To minimize vulnerability to thermal stress, structural elements (e.g., plates, rings, or beams) may be provided on the substrate support. Examples including rings, beams, and plates are shown in FIGS. 6 - 8 respectively. The structural elements may be installed to counter tensile stresses in selected portions of the substrate support (the upper surface of the substrate support and the vicinity thereof). The structural elements may be provided to generate tension and / or internal tensile stress. For example, the structural element has a greater thermal expansion than the surrounding material, such that when the structural element expands, tension is generated between the structural element and the surrounding material. Also, when the corresponding substrate support cools, the structural element may shrink more than the surrounding material and compress the surrounding material. In one embodiment, the structural element has the same or similar thermal energy conduction properties as the surrounding material, but a different coefficient of expansion.

[0109] FIG. 6 has a multilayer structure and / or layered structure including rings 602 and 603Monolithic Anisotropic substrate support 600 is shown. The thickness, inner diameter, and outer diameter of rings 602 and 603, and / or the material composition may be set to provide a suitable amount of local thermal conductivity and / or tensile stress. In the example of the figure, rings 602 and 603 may extend horizontally and / or parallel to the bottom surface of substrate support 600. The first ring 602 is disposed between the bottom of base 604 of substrate support 600 and heating element 110. The second ring 603 is disposed between heating element 110 and RF electrode 116. In one embodiment, rings 602 and 603 are formed of a ceramic material having a coefficient of thermal expansion greater than that of base 604. Base 604 may be formed of a ceramic material having a composition different from that of the ceramic materials of rings 602 and 603. Rings 602 and 603 may be provided to apply an internal tensile stress that may be caused by, for example, radial inward thermal contraction of rings 602 and 603. This contraction is represented by arrow 606.

[0110] FIG. 7 shows an anisotropic substrate support 700 having a multilayer structure and / or a layered structure including beams 702. Monolithic Anisotropic substrate support 700 is shown. Any number of beams may be provided. The length, width, horizontal cross-sectional area and shape of beams 702, and / or the material composition may be set to provide a suitable amount of local thermal conductivity and / or tensile stress. Beams 702 may extend perpendicular and / or parallel to each other. In one embodiment, beams 702 are installed equidistant from each other and / or from the vertical centerline 704 of substrate support 700. Beams 702 may be installed symmetrically with respect to one or more planes extending vertically through centerline 704.

[0111] When each structural element has a coefficient of thermal expansion (CTE) greater than that of the bulk ceramic material of the corresponding substrate support, one or more structural members may be added. The structural elements may include plates, rings, beams, etc., as shown in the presented figures. The tensile stress may be induced by the difference between (i) the manufacturing temperature at which the structural member takes its corresponding final shape, and (ii) the service temperature of the bulk ceramic material.

[0112] In one embodiment, the structure formed to include the structural member that results after sintering is heat treated at a temperature at which the structural member (e.g., a structural member having a high CTE value) deforms at a higher rate than the surrounding material. This may be referred to as creep deformation that reduces a controlled amount of stress.

[0113] In another embodiment, different portions of the substrate support may be formed to undergo different creep rates. This may be done by performing heat treatment, doping, and / or some other process at selected portions of the substrate support in order to control the final overall stress profile of the substrate support.

[0114] In yet another embodiment, the structural element may be formed of a ceramic material, coated with an additive, or modified by a chemical surface treatment that locally varies the CTE of the material surrounding the corresponding substrate support. In another embodiment, a solid having a selected size and shape is added to the bulk ceramic material at one or more preselected locations and reacts locally with and / or dissolves in the bulk ceramic material during sintering. This changes the local CTE at each location and forms the structural member in the bulk ceramic material (or bulk ceramic body) of the substrate support.

[0115] In one embodiment, a ceramic plate to be included in the preform of the substrate support is formed, sintered without applied pressure, and then other materials are added to form the preform. This may be done to reduce the height of the preform to a predetermined final volume, enabling more preforms to fit within the internal volume of the mold.

[0116] To form a preform as described above, a ceramic body with an initial stress resistant to cracking is formed and may be combined with other materials and internal components. This enables the material of the structural elements of the substrate support to be consolidated (e.g., sintered, welded, bonded, and / or made into a single solid) before forming a preform of the substrate support with a consolidated structural element. This may be done to greatly control the placement of the internal structure of the substrate support during sintering and to increase the throughput of the system used to manufacture the substrate support. This is different from a conventional hot-pressed ceramic substrate support formed by sintering all of the ceramic powders used to form the corresponding structure simultaneously.

[0117] FIG. 8 shows an anisotropic substrate support 800 having a multilayer structure and / or a layered structure comprising a plate 802 and a ceramic substrate 804 having different coefficients of thermal expansion. Monolithic The substrate support 800 may comprise other objects having different material compositions with unique properties (such as unique coefficients of thermal expansion, electrical conductivity, and / or electrical resistivity) described in connection with FIGS. 2-7 and 9, including metal layers, screens, rings, beams, coating layers, voids, and / or the like. The example of FIG. 8 includes a plate 802, but may comprise any of the other described items. The thickness, diameter, and / or material composition of the plate 802 may be set to provide a suitable amount of thermal conductivity, electrical conductivity, electrical resistivity, and / or local tensile stress.

[0118] FIG. 9 shows a multilayer structure and / or a layered structure that may include internal voids and / or flow paths (exemplary void 902 is shown) in a particular layer. MonolithicAnisotropic substrate support 900 is shown. Internal voids and flow paths are arranged to vary the thermal conductivity. Void 902 may be at a remote location different from others within substrate support 900. The flow paths may be called voids. As some examples, the flow paths may be ring-shaped and / or spiral-shaped. The voids and flow paths may be voids of any gas, liquid, and / or substance. In one embodiment, one or more of the voids and flow paths are filled with a low-pressure insulating gas (such as sulfur hexafluoride (SF6), argon (Ar), krypton (Kr), etc.) for reducing conductivity. In another embodiment, either or both of the voids and flow paths are filled with a conductive fluid. The conductive fluid may include high-pressure helium (He) or a metal (such as gallium (Ga), indium (In), and / or tin (Sn)). The conductive fluid may be included to improve heat transfer (such as forced convection, natural convection, etc.). The size, shape, thickness, diameter, and / or internal material of the voids and flow paths may be set to provide a suitable amount of thermal conductivity, electrical conductivity, electrical resistivity, and / or local tensile stress.

[0119] FIG. 10 shows a substrate support manufacturing system 1000, which includes a computer 1002, a press control device 1004 that controls one or more presses (one press 1006 is shown), a processing control device 1008 that controls one or more processing tools (one processing tool 1010 is shown), and a sensor 1012. The computer 1002 may include a production control device 1014, a memory 1016, and an interface 1018.

[0120] The production control device 1014 may include a temperature control device 1020, a pressure control device 1022, an arrangement control device 1024, a mold and press control device 1026, and / or other control devices 1028. Some operations of the control devices 1014, 1020, 1022, 1024, 1026, and 1028 will be described below in relation to the method of FIG. 11.

[0121] Memory 1016 may store, for example, parameters 1030, temperature data 1032, pressure data 1034, position data 1036, and / or other data 1038. Parameters 1030, as well as data 1032, 1034, 1036, and 1038, may correspond to a model of the substrate support and / or may be stored as part of a table, including historical values, predetermined values, estimated values, simulation values, and / or measured values. Parameters 1030 may include parameters detected by sensor 1012 and may include estimated, measured, and / or determined parameters used during the method of FIG. 11. Sensor 1012 may be installed in press 1006, processing tool 1010, and / or other locations. Sensor 1012 may include a temperature sensor, a pressure sensor, a position sensor, etc.

[0122] Temperature data 1032 may include, for example, the temperature of mold 1040 installed in press 1006. Pressure data may include the pressure applied to mold 1040. Although one press and one mold are shown, the press control device may be connected to and / or may control multiple presses and molds. The mold may include an initial preform, an intermediate preform, a final preform, and / or the resulting substrate support. The described preforms are further described below in relation to FIG. 11.

[0123] The processing tool 1010 may include a computer numerical control (CNC) milling machine, a knurling machine, a molding machine, a casting machine, a three-dimensional (3D) printer, and / or other machines and / or devices suitable for fabricating and / or modifying objects and / or internal structures included in the preform. The processing control device 1008 may receive control signals, parameters, and / or data from the control devices 1014, 1020, 1022, 1024, 1026, and 1028 through the interface 1018. The control devices 1014, 1020, 1022, 1024, 1026, and 1028 control the operations of the press control device 1004 and the processing control device 1008 to fabricate the substrate support.

[0124] The substrate support disclosed herein may be formed using several methods, and FIG. 11 shows an exemplary method that may include some of the above manufacturing embodiments. FIG. 11 shows a method of forming a substrate support. The following operations are mainly described in relation to the embodiments of FIGS. 1-10, but may be easily modified to apply to other embodiments of the present disclosure. These operations may be performed repeatedly.

[0125] This method may start at 1100. At 1102, materials (e.g., ceramic powder and / or other materials) and one or more objects (e.g., heating elements, electrodes, wiring, plates, rings, beams, and / or other objects disclosed herein) are intensively arranged in a press mold to form an initial preform.

[0126] At 1104, pressure may be applied to the initial preform. This may be referred to as the first operation or the pre-compaction operation. Operation 1104 may be performed before and / or during operation 1106. At 1106, the initial preform is sintered at a predetermined temperature. At 1107, a part of the initial internal structure may be processed to remove material from the initial internal structure and / or the initial internal structure may be shaped.

[0127] At 1108, it is determined whether another internal structure is to be formed. Each iteration of the combination of operations 1102, 1104, and 1106 may include different molds and / or presses.

[0128] At 1110, materials (e.g., ceramic powder and / or other materials), one or more initial internal structures, one or more intermediate internal structures, and / or one or more objects (e.g., heating elements, electrodes, wiring, plates, rings, beams, and / or other objects disclosed herein) are intensively arranged in a press mold to form an intermediate preform. The initial internal structures may be formed during the iterations of operations 1102, 1104, 1106, and / or by other operations. The intermediate internal structures may be formed during the iterations of operations 1110, 1112, 1114, and / or by other operations.

[0129] At 1112, pressure may be applied to the intermediate preform. This may be referred to as another pre-compaction operation. Operation 1112 may be performed before and / or during operation 1114. At 1114, the intermediate preform is sintered at a predetermined temperature. At 1115, a part of the intermediate internal structure may be processed to remove materials from the intermediate internal structure and / or the initial internal structure may be shaped.

[0130] At 1116, it is determined whether another internal structure is to be formed. Each iteration of the combination of operations 1110, 1112, and 1114 may include different molds and / or presses.

[0131] In 1118, materials (e.g., ceramic powder and / or other materials), one or more initial internal structures, one or more intermediate internal structures, and / or one or more objects (e.g., heating elements, electrodes, wiring, plates, rings, beams, and / or other objects disclosed herein) are intensively arranged in a press mold to form a final preform. The initial internal structures may be formed during the repetition of operations 1102, 1104, 1106 and / or by other operations. The intermediate internal structures may be formed during the repetition of operations 1110, 1112, 1114 and / or by other operations. In 1120, pressure may be applied to the final preform. This may be referred to as the final densification operation. Operation 1120 may be performed before and / or during operation 1122. In 1122, the final preform is sintered at a predetermined temperature. This method may end in 1124.

[0132] One or more of the above operations may include performing heat treatment, doping, and / or some other processes on selected portions of one or more initial internal structures and intermediate internal structures to control the final total stress profile of the substrate support.

[0133] During the above operations, the structure is preformed by performing a pre-consolidation operation, followed by a final consolidation operation. The density (mass per unit area), porosity per unit area, and / or number of cracks per unit area of each preformed structure is different from the rest of the final product. The expression "per unit area" means a preselected area or volume when the substrate support or a part thereof is divided into equal-sized units. For density, "per unit area" may mean volume. For porosity and number of cracks, "per unit area" may mean a two-dimensional area or volume. As an example, the first intermediate layer and the second intermediate layer may each include a pre-consolidated solid structure. The first intermediate layer and the second intermediate layer may be disposed between other layers of the final product. The other layers and / or other parts of the intermediate layer after final consolidation have a density, porosity, and / or number of cracks different from those of the preformed structure. The preformed structure may have a higher density, lower porosity, and fewer cracks than the other layers and / or other parts of the final product. As an example, the density of the preformed structure may be 1% or more higher than the density of the other layers and / or other parts of the final product. As another example, the density of the preformed structure may be 20% or more higher than the density of the other layers and / or other parts of the final product.

[0134] The above operations are meant as examples. These operations may be performed in sequence, synchronously, simultaneously, continuously during overlapping periods, or in a different order depending on the application. Also, any of the operations may not be performed or may be omitted depending on the embodiment and / or series of events.

[0135] The above examples enable the placement of a large amount of ceramic material in a mold prior to sintering and / or reduce the thickness of the bulk ceramic body required to meet a given thermal uniformity specification. The substrate support structure is arranged to improve heat dissipation and place the wafer closer to the heating element. This is done without sacrificing thermal uniformity, enabling a thinner ceramic body to achieve the same or improved performance with less raw material and in a reduced mold space, and as a result enabling thermal press capabilities.

[0136] The foregoing is essentially illustrative only and is not intended to limit the present disclosure, its application, or uses in any way. The broad teachings of the present disclosure can be implemented in a variety of forms. Thus, while the present disclosure includes specific examples, other variations will become apparent upon review of the drawings, the specification, and the following claims, and the true scope of the present disclosure should not be so limited. It should be understood that one or more steps within a method may be performed in a different order (or simultaneously) without changing the principles of the present disclosure. Further, while each embodiment has been described as having certain features, any one or more of those features described in connection with an embodiment of the present disclosure may be implemented in other embodiments and / or combined with features of other embodiments (even if not explicitly stated), i.e., the described embodiments are not mutually exclusive, and rearrangement of one or more embodiments is within the scope of the present disclosure.

[0137] Spatial and functional relationships between elements (e.g., between modules, between circuit elements, between semiconductor layers, etc.) are described using various terms including "connected", "engaged", "coupled", "adjacent", "proximate", "on", "above", "below", and "disposed". When the relationship between a first element and a second element is described in the above disclosure, unless explicitly stated to be "direct", the relationship can be a direct relationship with no other intervening elements between the first element and the second element, but at the same time can also be an indirect relationship with one or more intervening elements (spatially or functionally) between the first element and the second element. The expression "at least one of A, B, and C" as used herein should be interpreted to mean a logic (A OR B OR C) using non-exclusive logical OR, and should not be interpreted to mean "at least one of A, at least one of B, and at least one of C".

[0138] In some embodiments, the controller is part of a system that can be part of the examples described above. Such a system can include a semiconductor processing apparatus comprising a processing tool, a chamber, a processing platform, and / or specific processing components (such as a wafer pedestal, a gas flow system, etc.). These systems can be integrated with electronics for controlling the operation of the semiconductor wafer or substrate before, during, and after processing. These electronics may be referred to as a "controller" that can control various components or sub-components of the system. The controller can be programmed to control any of the processes disclosed herein, including the supply of process gases, temperature setting (e.g., heating and / or cooling), pressure setting, vacuum setting, power setting, setting of a radio frequency (RF) generator, setting of an RF matching circuit, frequency setting, flow rate setting, fluid supply setting, position movement setting, wafer loading and unloading to / from a tool and other transfer tools and / or a load lock connected or coupled to a specific system, depending on the processing requirements and / or the type of system.

[0139] Generally, a controller may be defined as an electronic device having various integrated circuits, logic, memory, and / or software that receives instructions, issues instructions, controls operations, enables cleaning operations, enables endpoint measurements, etc. The integrated circuit may include a chip in the form of firmware that stores program instructions, a digital signal processor (DSP), a chip defined as an application specific integrated circuit (ASIC), and / or one or more microprocessors or microcontrollers that execute program instructions (e.g., software). The program instructions are instructions transmitted to the controller in the form of various individual settings (or program files) that may define operating parameters for performing a particular process on or for a semiconductor wafer or for a system. In some embodiments, the operating parameters may be part of a recipe defined by a process engineer to implement one or more processing steps during the manufacture of one or more layers, materials, metals, oxides, silicon, silicon dioxide, surfaces, circuits, and / or wafer molds.

[0140] In some embodiments, the controller may be part of a computer integrated with or coupled to the system, otherwise network-connected to the system, or a combination thereof, or may be coupled to the computer. For example, the controller may be in the "cloud" that enables remote access to wafer processing, or may be all or part of the fab host computer system. The computer may enable remote access to the system, monitor the progress of manufacturing operations, investigate the history of past manufacturing operations, investigate trends or performance criteria from multiple manufacturing operations, and change the parameters of the current process, or set the processing steps following the current process, or initiate a new process. In some examples, a remote computer (e.g., a server) can provide a process recipe to the system through a network that may include a local network or the Internet. The remote computer may then include a user interface that enables the entry or programming of parameters and / or settings transmitted from the remote computer to the system. In some examples, the controller receives instructions in a data format that specifies the parameters of each processing step performed during one or more operations. It should be understood that the parameters may be specific to the type of process being performed and the type of tool configured to be connected to or controlled by the controller. Thus, as described above, the controller may be distributed, for example, by including one or more separate controllers network-connected to each other and collaborating towards a common purpose such as the processes and controls described herein. An example of a controller distributed for such a purpose would be one or more integrated circuits on a chamber that are installed remotely (e.g., at the platform level or as part of a remote computer) and communicate with one or more integrated circuits in the chamber to collaboratively control the process in the chamber.

[0141] Although not limiting, the exemplary system may include a plasma etching chamber or module, a deposition chamber or module, a spin rinse chamber or module, a metal plating chamber or module, a cleaning chamber or module, a bevel edge etching chamber or module, a physical vapor deposition (PVD) chamber or module, a chemical vapor deposition (CVD) chamber or module, an atomic layer deposition (ALD) chamber or module, an atomic layer etching (ALE) chamber or module, an ion implantation chamber or module, a track chamber or module, and other semiconductor processing systems that may be relevant or used in the fabrication and / or manufacture of semiconductor wafers.

[0142] As described above, the controller may communicate with one or more of other tool circuits or modules, other tool components, cluster tools, other tool interfaces, adjacent tools, proximate tools, tools installed throughout the factory, a main computer, another controller, or tools used for material transport that load and unload wafer containers with respect to tool positions and / or load ports in a semiconductor manufacturing facility, depending on the process steps performed by the tool. The present invention can also be realized, for example, in the following aspects. Application Example 1: A substrate support, a high-frequency electrode, a clamp electrode, a heating element, a heterogeneous body having an integral structure, a first layer formed of a first material and having the high-frequency electrode and the clamp electrode disposed therein, a second layer formed of the first material or a second material and having the heating element disposed therein, and a first intermediate layer formed of a material different from those of the first layer and the second layer, as a result, the thermal energy conductivity of the first intermediate layer is different from the thermal energy conductivity of at least one of the first material and the second material, and, the electrical energy conductivity of the first intermediate layer is different from the electrical conductivity of at least one of the first material and the second material, and at least one of them is satisfied, the first intermediate layer is disposed between the first layer and the second layer, or the second layer is disposed between the first layer and the first intermediate layer, a heterogeneous body having an integral structure, A substrate support comprising. Application Example 2: The substrate support according to Application Example 1, wherein the first intermediate layer is formed of a material different from those of the first layer and the second layer, as a result, the thermal energy conductivity of the first intermediate layer is different from the thermal energy conductivity of at least one of the first material and the second material, and, A substrate support in which the electrical energy conductivity of the first intermediate layer is different from the electrical conductivity of at least one of the first material and the second material. Application Example 3: The substrate support according to Application Example 1, wherein the first intermediate layer is formed of a material different from the first layer and the second layer, and as a result, the thermal energy conductivity of the first intermediate layer is different from the thermal energy conductivity of the first material and the second material, and the electrical energy conductivity of the first intermediate layer is different from the electrical conductivity of the first material and the second material, at least one of which is satisfied, a substrate support. Application Example 4: The substrate support according to Application Example 1, wherein the coefficient of thermal expansion of the first intermediate layer is different from the coefficient of thermal expansion of at least one of the first material and the second material, a substrate support. Application Example 5: The substrate support according to Application Example 1, wherein the first intermediate layer has an inner portion and an outer portion, the inner portion is formed of a material different from the first layer and the second layer, the outer portion is formed of the first material or the second material, a substrate support. Application Example 6: The substrate support according to Application Example 1, and further, a substrate support including a metal layer disposed between the first intermediate layer and the second layer. Application Example 7: The substrate support according to Application Example 6, wherein the metal layer is mounted as a metal screen or a metal mesh, a substrate support. Application Example 8: The substrate support according to Application Example 1, wherein the second layer is formed of the first material, a substrate support. Application Example 9: The substrate support according to Application Example 1, wherein the first intermediate layer has an inner portion covered with a coating layer, and an outer portion surrounding the inner portion, a substrate support. Application Example 10: The substrate support according to Application Example 1, wherein the first intermediate layer includes a solid structure having at least one of a density, a porosity per unit area, and a number of cracks per unit area different from those of the first layer, the second layer, and the first intermediate layer having the integral structure, a substrate support. Application Example 11: The substrate support according to Application Example 1, and further, a second intermediate layer disposed below the second layer and formed of a material different from the first layer and the second layer, and as a result, The thermal energy conductivity of the second intermediate layer is different from the thermal energy conductivity of at least one of the first material and the second material, and the electrical energy conductivity of the second intermediate layer is different from the electrical conductivity of at least one of the first material and the second material, and a substrate support. Application Example 12: The substrate support according to Application Example 11, wherein the second intermediate layer has an inner portion and an outer portion, the inner portion is formed of a material different from the first layer and the second layer, and the outer portion is formed of the first material or the second material, a substrate support. Application Example 13: The substrate support according to Application Example 11, further comprising a first metal layer disposed between the first intermediate layer and the second layer, and a second metal layer disposed between the second layer and the second intermediate layer, a substrate support. Application Example 14: The substrate support according to Application Example 11, wherein the first intermediate layer has a first inner portion covered with a first coating layer, and a first outer portion surrounding the first inner portion, and the second intermediate layer has a second inner portion covered with a second coating layer, and a second outer portion surrounding the second inner portion, a substrate support. Application Example 15: The substrate support according to Application Example 11, wherein the first intermediate layer includes a first solid structure, and the second intermediate layer includes a second solid structure, and the first solid structure and the second solid structure have at least one of a density, a porosity per unit area, and a number of cracks per unit area different from those of the first layer, the second layer, the remaining portion of the first intermediate layer, and the remaining portion of the second intermediate layer of the heterogeneous body having the integral structure, a substrate support. Application Example 16: The substrate support according to Application Example 1, wherein the heterogeneous body having the integral structure is formed in the same manner as the heating element and includes a hollow internal region that constrains the heating element, a substrate support. Application Example 17: The substrate support according to Application Example 1, wherein the heterogeneous body having the integral structure includes a fixture for restricting the movement of the heating element with respect to the heterogeneous body having the integral structure, a substrate support. Application Example 18: The substrate support according to Application Example 1, wherein the first intermediate layer includes at least one of a ring and a void, a substrate support. Application Example 19: The substrate support according to Application Example 1, The first intermediate layer is a substrate support provided with voids filled with an insulating gas or a conductive fluid. Application Example 20: The substrate support according to Application Example 1, wherein the heterogeneous body having the integrated structure has vertically extending beams, and the beams are formed of a material different from that of the first layer and the second layer. Application Example 21: A method of forming a substrate support, comprising the steps of arranging a first material and a first object in a first mold to form an initial preform, sintering the initial preform to provide a first initial internal structure, arranging the first initial internal structure, a second material, and a second object in a second mold to form a final preform, and sintering the final preform to provide the substrate support. The first object and the second object include a heating element, a clamp electrode, and a high-frequency electrode. Application Example 22: The method according to Application Example 21, further comprising applying pressure to the initial preform at least either before or during sintering of the initial preform. Application Example 23: The method according to Application Example 21, further comprising not applying pressure to the initial preform at least either before or during sintering of the initial preform. Application Example 24: The method according to Application Example 21, further comprising applying pressure to the final preform at least either before or during sintering of the final preform. Application Example 25: The method according to Application Example 21, further comprising not applying pressure to the final preform at least either before or during sintering of the final preform. Application Example 26: The method according to Application Example 21, further comprising forming a plurality of internal structures including the initial internal structure, wherein forming the final preform includes arranging the plurality of internal structures in the second mold. Application Example 27: The method according to Application Example 21, further comprising intensively arranging at least either the first initial internal structure or a third material and a third object in a third mold to form an intermediate preform, and sintering the intermediate preform to form an intermediate internal structure. Forming the final preform includes arranging the intermediate internal structure in the second mold. Application Example 28: The method according to Application Example 21, further comprising: A method comprising the step of processing the initial internal structure before forming the final preform and disposing the initial internal structure in the second mold. Application Example 29: The method according to Application Example 21, wherein the substrate support has a green sheet structure. Application Example 30: The method according to Application Example 21, wherein the formation of the initial preform includes the step of forming a stack of a plurality of layers.

Claims

1. A substrate support, a high-frequency electrode, a clamp electrode, a heating element, a heterogeneous body having an integral structure, a first layer formed of a first material and having the high-frequency electrode and the clamp electrode disposed therein, a second layer formed of the first material or a second material and having the heating element disposed therein, and a first intermediate layer formed of a material different from that of the first layer and the second layer, such that the thermal energy conductivity of the first intermediate layer is different from the thermal energy conductivity of at least one of the first material and the second material, and the electrical energy conductivity of the first intermediate layer is different from the electrical energy conductivity of at least one of the first material and the second material, wherein the first intermediate layer is disposed between the first layer and the second layer, or the second layer is disposed between the first layer and the first intermediate layer, the heterogeneous body, comprising, a substrate support, wherein at least one of the material of the first intermediate layer and the material of the second layer has at least one of a different density and a different porosity from the first material of the first layer.

2. The substrate support according to claim 1, wherein the first intermediate layer is formed of a material different from that of the first layer and the second layer, such that the thermal energy conductivity of the first intermediate layer is different from the thermal energy conductivity of at least one of the first material and the second material, and the electrical energy conductivity of the first intermediate layer is different from the electrical energy conductivity of at least one of the first material and the second material.

3. The substrate support according to claim 1, wherein the first intermediate layer is formed of a material different from that of the first layer and the second layer, such that the thermal energy conductivity of the first intermediate layer is different from the thermal energy conductivity of the first material and the second material, and the electrical energy conductivity of the first intermediate layer is different from the electrical energy conductivity of the first material and the second material,

4. The substrate support according to claim 1, wherein the coefficient of thermal expansion of the first intermediate layer is different from the coefficient of thermal expansion of at least one of the first material and the second material.

5. A substrate support, a high-frequency electrode, a clamp electrode, a heating element, a heterogeneous body having an integral structure, a first layer formed of a first material and having the high-frequency electrode and the clamp electrode disposed therein, a second layer formed of the first material or a second material and having the heating element disposed therein, a first intermediate layer formed of a material different from those of the first layer and the second layer, and as a result, the thermal energy conductivity of the first intermediate layer is different from the thermal energy conductivity of at least one of the first material and the second material, and the electrical energy conductivity of the first intermediate layer is different from the electrical energy conductivity of at least one of the first material and the second material, and at least one of them is satisfied, the first intermediate layer is disposed between the first layer and the second layer, or the second layer is disposed between the first layer and the first intermediate layer, a heterogeneous body, comprising, the first intermediate layer has an inner portion and an outer portion, the inner portion is formed of a material different from those of the first layer and the second layer, the outer portion is formed of the first material or the second material, a substrate support.

6. The substrate support according to claim 1, further comprising a metal layer disposed between the first intermediate layer and the second layer, a substrate support.

7. The substrate support according to claim 6, wherein the metal layer is mounted as a metal screen or a metal mesh, a substrate support.

8. The substrate support according to claim 1, wherein the second layer is formed of the first material, a substrate support.

9. A substrate support, a high-frequency electrode, a clamp electrode, a heating element, a heterogeneous body having an integral structure, a first layer formed of a first material and having the high-frequency electrode and the clamp electrode disposed therein, a second layer formed of the first material or a second material and having the heating element disposed therein, a first intermediate layer formed of a material different from those of the first layer and the second layer, and as a result, the thermal energy conductivity of the first intermediate layer is different from the thermal energy conductivity of at least one of the first material and the second material, and The electrical energy conductivity of the first intermediate layer becomes at least one of being different from the electrical energy conductivity of at least one of the first material and the second material. The first intermediate layer is disposed between the first layer and the second layer, or the second layer is disposed between the first layer and the first intermediate layer, a heterogeneous body. comprising The first intermediate layer an inner portion covered by a coating layer, an outer portion surrounding the inner portion, A substrate support comprising

10. The substrate support according to claim 1, wherein the first intermediate layer includes a solid structure having at least one of a density different from that of the first layer, the second layer, and the first intermediate layer of the heterogeneous body, a porosity per unit area, and a number of cracks per unit area. A substrate support.

11. The substrate support according to claim 1, further a second intermediate layer disposed below the second layer and formed of a material different from the first layer and the second layer, and as a result, the thermal energy conductivity of the second intermediate layer is different from the thermal energy conductivity of at least one of the first material and the second material, and the electrical energy conductivity of the second intermediate layer becomes at least one of being different from the electrical energy conductivity of at least one of the first material and the second material, comprising a second intermediate layer. A substrate support.

12. The substrate support according to claim 11, the second intermediate layer has an inner portion and an outer portion, the inner portion is formed of a material different from the first layer and the second layer, the outer portion is formed of the first material or the second material. A substrate support.

13. A substrate support, a high-frequency electrode, a clamp electrode, a heating element, a heterogeneous body having an integral structure, a first layer formed of a first material with the high-frequency electrode and the clamp electrode disposed therein, a second layer formed of the first material or a second material with the heating element disposed therein, and a first intermediate layer formed of a material different from the first layer and the second layer, and as a result, the thermal energy conductivity of the first intermediate layer is different from the thermal energy conductivity of at least one of the first material and the second material, and The electrical energy conductivity of the first intermediate layer becomes at least either different from the electrical energy conductivity of at least one of the first material and the second material, the first intermediate layer is disposed between the first layer and the second layer, or the second layer is disposed between the first layer and the first intermediate layer, as a heterogeneous body, a second intermediate layer disposed below the second layer and formed of a material different from the first layer and the second layer, as a result, the thermal energy conductivity of the second intermediate layer is different from the thermal energy conductivity of at least one of the first material and the second material, and, the electrical energy conductivity of the second intermediate layer becomes at least either different from the electrical energy conductivity of at least one of the first material and the second material, a second intermediate layer, a first metal layer disposed between the first intermediate layer and the second layer, a second metal layer disposed between the second layer and the second intermediate layer, a substrate support including the above.

14. The substrate support according to claim 11, wherein the first intermediate layer, has a first inner portion covered with a first coating layer, and a first outer portion surrounding the first inner portion, wherein the second intermediate layer, has a second inner portion covered with a second coating layer, and a second outer portion surrounding the second inner portion, a substrate support.

15. The substrate support according to claim 11, wherein the first intermediate layer includes a first solid structure, and the second intermediate layer includes a second solid structure, the first solid structure and the second solid structure have at least one of a density, a porosity per unit area, and a number of cracks per unit area different from those of the first layer, the second layer, the remaining portion of the first intermediate layer, and the remaining portion of the second intermediate layer of the heterogeneous body, a substrate support.

16. A substrate support, including a high-frequency electrode, a clamp electrode, a heating element, a heterogeneous body having an integral structure, a first layer formed of a first material and having the high-frequency electrode and the clamp electrode disposed therein, a second layer formed of the first material or a second material and having the heating element disposed therein, and a first intermediate layer formed of a material different from the first layer and the second layer, as a result, The thermal energy conductivity of the first intermediate layer is different from the thermal energy conductivity of at least one of the first material and the second material, and, the electrical energy conductivity of the first intermediate layer is different from the electrical energy conductivity of at least one of the first material and the second material, and at least one of the above is satisfied, the first intermediate layer is disposed between the first layer and the second layer, or the second layer is disposed between the first layer and the first intermediate layer, and the anisotropic body, comprising, The anisotropic body is formed in the same manner as the heating element and includes a hollow internal region that restricts the heating element, a substrate support.

17. A substrate support, a high-frequency electrode, a clamp electrode, a heating element, an anisotropic body having an integral structure, a first layer formed of a first material and having the high-frequency electrode and the clamp electrode disposed therein, a second layer formed of the first material or a second material and having the heating element disposed therein, a first intermediate layer formed of a material different from the first layer and the second layer, and as a result, the thermal energy conductivity of the first intermediate layer is different from the thermal energy conductivity of at least one of the first material and the second material, and, the electrical energy conductivity of the first intermediate layer is different from the electrical energy conductivity of at least one of the first material and the second material, and at least one of the above is satisfied, the first intermediate layer is disposed between the first layer and the second layer, or the second layer is disposed between the first layer and the first intermediate layer, and the anisotropic body, comprising, The anisotropic body includes a fixture for restricting the movement of the heating element relative to the anisotropic body, a substrate support.

18. A substrate support, a high-frequency electrode, a clamp electrode, a heating element, an anisotropic body having an integral structure, a first layer formed of a first material and having the high-frequency electrode and the clamp electrode disposed therein, a second layer formed of the first material or a second material and having the heating element disposed therein, a first intermediate layer formed of a material different from the first layer and the second layer, and as a result, the thermal energy conductivity of the first intermediate layer is different from the thermal energy conductivity of at least one of the first material and the second material, and, The electrical energy conductivity of the first intermediate layer becomes at least either different from the electrical energy conductivity of at least one of the first material and the second material. The first intermediate layer is disposed between the first layer and the second layer, or the second layer is disposed between the first layer and the first intermediate layer, a heterogeneous body. Comprising The first intermediate layer is a substrate support comprising at least either a ring or voids.

19. A substrate support, A high-frequency electrode, A clamp electrode, A heating element, A heterogeneous body having an integral structure, A first layer formed of a first material, with the high-frequency electrode and the clamp electrode disposed therein, A second layer formed of the first material or a second material, with the heating element disposed therein, A first intermediate layer formed of a material different from the first layer and the second layer, and as a result, The thermal energy conductivity of the first intermediate layer is different from the thermal energy conductivity of at least one of the first material and the second material, and The electrical energy conductivity of the first intermediate layer becomes at least either different from the electrical energy conductivity of at least one of the first material and the second material. The first intermediate layer is disposed between the first layer and the second layer, or the second layer is disposed between the first layer and the first intermediate layer, a heterogeneous body. Comprising The first intermediate layer is a substrate support comprising voids filled with an insulating gas or a conductive fluid.

20. A substrate support, A high-frequency electrode, A clamp electrode, A heating element, A heterogeneous body having an integral structure, A first layer formed of a first material, with the high-frequency electrode and the clamp electrode disposed therein, A second layer formed of the first material or a second material, with the heating element disposed therein, A first intermediate layer formed of a material different from the first layer and the second layer, and as a result, The thermal energy conductivity of the first intermediate layer is different from the thermal energy conductivity of at least one of the first material and the second material, and The electrical energy conductivity of the first intermediate layer becomes at least either different from the electrical energy conductivity of at least one of the first material and the second material. The first intermediate layer is disposed between the first layer and the second layer, or the second layer is disposed between the first layer and the first intermediate layer, and is a heterogeneous body; comprising; the heterogeneous body has a vertically extending beam; the beam is a substrate support formed of a material different from that of the first layer and the second layer.

21. A method for forming a substrate support, comprising: placing a first material and a first object in a first mold to form an initial preform; sintering the initial preform to provide an initial internal structure; placing the initial internal structure, a second material, and a second object in a second mold to form a final preform; sintering the final preform to provide the substrate support, wherein the first object and the second object include a heating element, a clamp electrode, and a high-frequency electrode.

22. The method according to claim 21, further comprising: applying pressure to the initial preform at least either before or during sintering of the initial preform.

23. The method according to claim 21, further comprising: not applying pressure to the initial preform at least either before or during sintering of the initial preform.

24. The method according to claim 21, further comprising: applying pressure to the final preform at least either before or during sintering of the final preform.

25. The method according to claim 21, further comprising: not applying pressure to the final preform at least either before or during sintering of the final preform.

26. The method according to claim 21, further comprising: forming a plurality of internal structures including the initial internal structure, wherein the formation of the final preform includes placing the plurality of internal structures in the second mold.

27. The method according to claim 21, further comprising: intensively placing at least one of the initial internal structure, a third material, and a third object in a third mold to form an intermediate preform; sintering the intermediate preform to form an intermediate internal structure, wherein the formation of the final preform includes placing the intermediate internal structure in the second mold.

28. The method according to claim 21, further comprising: a step of processing the initial internal structure before forming the final preform and disposing the initial internal structure in the second mold.

29. The method according to claim 21, wherein the substrate support has a green sheet structure.

30. The method according to claim 21, wherein the formation of the initial preform includes a step of forming a stack of a plurality of layers.

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