Filter

Abstract

This filter (10) comprises: a dielectric substrate (14); a plurality of resonators (11A to 11E) that are formed inside the dielectric substrate (14), and for which the periphery is surrounded by a shielding conductor; and input / output terminals (22A, 22B) that are formed at a portion at which the shielding conductor is not formed. The resonator (11A) closest to the input / output terminal (22A) of the plurality of resonators and the resonator (11E) that is closest to the input / output terminal (22B) of the plurality of resonators are in a point-symmetrical positional relationship.

Description

Technical Field

[0001] The present invention relates to a filter.

Background Art

[0002] Japanese Patent Publication No. 2011-507312 discloses a resonator device provided with a coupling adjustment via hole between two resonators. According to Japanese Patent Publication No. 2011-507312, the inductive coupling (coupling degree) between two resonators can be adjusted by the coupling adjustment via hole.

[0003] Japanese Patent Application Laid-Open No. 2020-198482 proposes a small filter with good characteristics that can solve the problems of the resonator device described in Japanese Patent Publication No. 2011-507312. That is, Japanese Patent Application Laid-Open No. 2020-198482 proposes a filter that can solve the problem that the size of the filter increases when the distance between resonators is increased.

[0004] In addition, Japanese Patent Application Laid-Open No. 2020-198482 proposes a structure that can improve the Q value more than before by appropriately securing the distance between resonators and the distance from the shielding conductor. By applying this structure, it has become possible to consider filters with smaller insertion loss or larger attenuation amount than before.

Summary of the Invention

[0005] In Japanese Patent Application Laid-Open No. 2020-198482, by applying the above-described structure, it has become possible to consider a filter with higher performance. However, when applied to a filter, due to manufacturing variations, a sufficient attenuation amount cannot be ensured, and desired filter characteristics cannot be ensured. Among the resonator arrangements that achieve a high Q value, depending on the arrangement method, the variation in the coupling degree may increase.

[0006] An object of the present invention is to provide a small filter with good characteristics.

[0007] A filter according to one aspect of the present invention includes a dielectric substrate, a plurality of resonators formed in the dielectric substrate and surrounded by a shielding conductor around them, and a first input / output terminal and a second input / output terminal formed in a portion where the shielding conductor is not formed. Among the plurality of resonators, a first resonator which is the resonator closest to the first input / output terminal and a second resonator which is the resonator closest to the second input / output terminal are in a point-symmetrical positional relationship with the center of the dielectric substrate in a plan view as the center of symmetry. A third resonator among the plurality of resonators and a fourth resonator among the plurality of resonators are in a point-symmetrical positional relationship with the center of the dielectric substrate in a plan view as the center of symmetry. The position of the third resonator in a first direction which is the longitudinal direction of the dielectric substrate is between the position of the first resonator in the first direction and the position of the center of the dielectric substrate in the first direction. The position of the fourth resonator in the first direction is between the position of the second resonator in the first direction and the position of the center of the dielectric substrate in the first direction.

[0008] According to the present invention, a small-sized filter with good characteristics can be provided.

Brief Description of Drawings

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DETAILED DESCRIPTION OF THE INVENTION

[0010] Regarding the filter according to the present invention, preferred embodiments will be given and described in detail below with reference to the accompanying drawings.

[0011] [First Embodiment] The filter 10 according to the first embodiment will be described with reference to the drawings. FIG. 1 is a perspective view showing the filter 10 according to the present embodiment. FIG. 2 is a plan view showing the filter 10 according to the present embodiment. FIGS. 1 and 2 show an example in which five resonators 11A to 11E are provided.

[0012] As shown in FIGS. 1 and 2, the filter 10 according to the present embodiment includes a dielectric substrate 14. The dielectric substrate 14 is formed, for example, in a rectangular parallelepiped shape, but is not limited thereto. The dielectric substrate 14 is configured by laminating a plurality of ceramic sheets (dielectric ceramic sheets).

[0013] The dielectric substrate 14 has two main surfaces 14a and 14b and four side surfaces 14c to 14f. The direction along the normal direction of the side surfaces 14c and 14d, more specifically, the normal direction of the side surfaces 14c and 14d is defined as the X direction. That is, the longitudinal direction of the dielectric substrate 14 in plan view is the X direction. The direction along the normal direction of the side surfaces 14e and 14f, more specifically, the normal direction of the side surfaces 14e and 14f is defined as the Y direction. The direction along the normal direction of one main surface (first main surface) 14a and the other main surface (second main surface) 14b of the dielectric substrate 14, more specifically, the normal direction of the main surfaces 14a and 14b is defined as the Z direction.

[0014] On the main surface 14b side of the dielectric substrate 14, a shielding conductor (first main surface side shielding conductor, lower shielding conductor) 12A is formed. That is, the shielding conductor 12A is formed below the dielectric substrate 14 in FIG. 1. On the main surface 14a side of the dielectric substrate 14, a shielding conductor (second main surface side shielding conductor, upper shielding conductor) 12B is formed. That is, the shielding conductor 12B is formed above the dielectric substrate 14 in FIG. 1.

[0015] Input / output terminal 22A is formed on side surface 14c of dielectric substrate 14. Input / output terminal 22B is formed on side surface 14d of dielectric substrate 14. Input / output terminal 22A is coupled to shielding conductor 12B via connection line 32a. Also, input / output terminal 22B is coupled to shielding conductor 12B via connection line 32b. In FIGS. 1 and 2, an example in which input / output terminals 22A and 22B are connected to shielding conductor 12B is shown, but input / output terminals 22A and 22B may be connected to resonators 11A and 11E, respectively.

[0016] Shielding conductor 12Ca is formed on side surface 14e of dielectric substrate 14. Shielding conductor 12Cb is formed on side surface 14f of dielectric substrate 14. Shielding conductors 12Ca and 12Cb are formed in a plate shape.

[0017] Capacitor electrodes (strip lines) 18A to 18E facing shielding conductor 12A are formed in dielectric substrate 14. In FIG. 1, capacitor electrodes 18A to 18E are shown as squares, but the shapes of capacitor electrodes 18A to 18E are not limited to squares. For example, the shapes of capacitor electrodes 18A to 18E may be rectangles. When generally describing capacitor electrodes, reference numeral 18 is used, and when describing individual capacitor electrodes, reference numerals 18A to 18E are used.

[0018] Via electrode portions 20A, 20B, 20C, 20D, and 20E are further formed in dielectric substrate 14. When generally describing via electrode portions, reference numeral 20 is used, and when describing individual via electrode portions, reference numerals 20A to 20E are used.

[0019] The via electrode portion 20 is composed of a plurality of via electrodes 24. The via electrodes 24 are respectively embedded in via holes formed in the dielectric substrate 14. As shown in FIG. 2, the plurality of via electrodes 24 constituting the via electrode portion 20 are arranged along a virtual ring 26 when viewed from above. More specifically, the plurality of via electrodes 24 constituting the via electrode portion 20 are arranged along a virtual circle. Since the via electrode portion 20 is constituted by arranging the plurality of via electrodes 24 along the virtual ring 26, the via electrode portion 20 can behave like a large-diameter via electrode corresponding to the virtual ring 26. Since the via electrode portion 20 is constituted by a plurality of via electrodes 24 having a relatively small diameter, the manufacturing process can be simplified. Also, since the via electrode portion 20 is constituted by a plurality of via electrodes 24 having a relatively small diameter, the variation in the diameter of the via electrode portion 20 can be reduced. Further, since the via electrode portion 20 is constituted by a plurality of via electrodes 24 having a relatively small diameter, less material such as silver embedded in the via is required, and cost reduction can be achieved.

[0020] One end (lower end) of the via electrode portion 20 is connected to the capacitor electrode 18. The other end (upper end) of the via electrode portion 20 is connected to the shielding conductor 12B. Thus, the via electrode portion 20 is formed from the capacitor electrode 18 to the shielding conductor 12B.

[0021] The capacitor electrode 18A and the via electrode portion 20A constitute a structure 16A. The capacitor electrode 18B and the via electrode portion 20B constitute a structure 16B. The capacitor electrode 18C and the via electrode portion 20C constitute a structure 16C. Similarly, the capacitor electrode 18D and the via electrode portion 20D constitute a structure 16D. The capacitor electrode 18E and the via electrode portion 20E constitute a structure 16E. Note that the symbol 16 is used when generally describing the structure, and the symbols 16A to 16E are used when describing individual structures. A pattern (not shown) may be appropriately provided between the respective structures 16.

[0022] The filter 10 is provided with a plurality of resonators each including structures 16A to 16E. That is, the filter 10 is provided with a resonator 11A, a resonator 11B, a resonator 11C, a resonator 11D, and a resonator 11E. When generally describing the resonator, the reference numeral 11 is used, and when describing each individual resonator, the reference numerals 11A to 11E are used.

[0023] The resonator 11A and the resonator 11B are arranged adjacent to each other. The resonator 11B and the resonator 11C are arranged adjacent to each other. The resonator 11C and the resonator 11D are arranged adjacent to each other. The resonator 11D and the resonator 11E are arranged adjacent to each other. Each of the plurality of resonators 11 is provided with one via electrode portion 20.

[0024] As shown in FIG. 2, the via electrode portions 20A, 20B, 20C, 20D, and 20E are shifted from each other in the X direction. The position of the center P3 of the via electrode portion 20C in the X direction is between the position of the center P1 of the via electrode portion 20A in the X direction and the position of the center P5 of the via electrode portion 20E in the X direction. Preferably, the distance between the position of the center P3 of the via electrode portion 20C in the X direction and the position of the center P1 of the via electrode portion 20A in the X direction is equal to the distance between the position of the center P3 of the via electrode portion 20C in the X direction and the position of the center P5 of the via electrode portion 20E in the X direction.

[0025] Similarly, the position of the center P3 of the via electrode portion 20C in the Y direction is between the position of the center P1 of the via electrode portion 20A in the Y direction and the position of the center P5 of the via electrode portion 20E in the Y direction. Preferably, the distance between the position of the center P3 of the via electrode portion 20C in the Y direction and the position of the center P1 of the via electrode portion 20A in the Y direction is equal to the distance between the position of the center P3 of the via electrode portion 20C in the Y direction and the position of the center P5 of the via electrode portion 20E in the Y direction. The position of the center P1 of the via electrode portion 20A in the Y direction is equivalent to the position of the center P4 of the via electrode portion 20D in the Y direction. Similarly, the position of the center P2 of the via electrode portion 20B in the Y direction is equivalent to the position of the center P5 of the via electrode portion 20E in the Y direction.

[0026] Furthermore, among the five via electrode portions 20A to 20E, the via electrode portion 20 closest to the input / output terminal 22A is the via electrode portion 20A. That is, the distance in the X direction between the position of the center P1 of the via electrode portion 20A and the position of the input / output terminal 22A is smaller than the distance in the X direction between the position of the center P2 of the via electrode portion 20B and the position of the input / output terminal 22A. Among the five via electrode portions 20A to 20E, the via electrode portion 20 closest to the input / output terminal 22B is the via electrode portion 20E. The distance in the X direction between the position of the center P5 of the via electrode portion 20E and the position of the input / output terminal 22B is smaller than the distance in the X direction between the position of the center P4 of the via electrode portion 20D and the position of the input / output terminal 22B. The via electrode portion 20A and the via electrode portion 20D are located on the side of the side surface 14e. The via electrode portion 20B and the via electrode portion 20E are located on the side of the side surface 14f.

Example

[0027] Next, the results of confirming the differences in characteristics between the example and the comparative example are shown.

[0028] First, in the ideal filter waveform shown in FIG. 3A, the variation in the interval between attenuation poles is small, and the variation in the peak value is also small. On the other hand, as shown in FIG. 3B, the filter waveform of the filter including variations has a large variation in the interval between attenuation poles and also a large variation in the peak value. As a result, the desired attenuation characteristics cannot be obtained with the filter including variations. The factors include variations in the coupling degree of the resonator, variations in the coupling capacitance, variations in the bypass capacitance, and the like.

[0029] <First Embodiment> [Comparative Example 1] As shown in FIG. 4A, the filter 100 according to Comparative Example 1 includes four resonators 11A to 11D. These resonators 11A to 11D are arranged at line-symmetric positions with the center line of the dielectric substrate 14 in a plan view as the axis of symmetry. The resonator 11A and the resonator 11D correspond to each other. The resonator 11B and the resonator 11C correspond to each other. In other words, the filter 100 according to Comparative Example 1 has a structure in which the combination of the via electrode portion 20A and the via electrode portion 20B and the combination of the via electrode portion 20C and the via electrode portion 20D are arranged at line-symmetric positions.

[0030] As shown in FIGS. 5A and 5B, the filter waveform of the filter 100 according to Comparative Example 1 had a large variation with respect to the ideal filter waveform, and the variation directions (+·-) were also various.

[0031] [Example 1] In the filter according to Embodiment 1, as shown in FIG. 4B, five resonators 11A to 11E are provided. These resonators 11A to 11E are arranged at point-symmetrical positions with the center C (see FIG. 2) of the dielectric substrate 14 in a plan view as the center of symmetry. The resonator 11A and the resonator 11E correspond to each other. That is, the resonator 11A with the smallest distance from the input / output terminal 22A and the resonator 11E with the smallest distance from the input / output terminal 22B are arranged at point-symmetrical positions. Also, the resonator 11B and the resonator 11D correspond to each other. In other words, the filter according to Embodiment 1 has a structure in which the via electrode portion 20A closest to one input / output and the via electrode portion 20E closest to the other input / output are arranged at point-symmetrical positions. Note that the via electrode portion 20B and the via electrode portion 20D are also arranged at point-symmetrical positions.

[0032] As shown in FIGS. 6A and 6B, the filter according to Embodiment 1 had little variation and a constant variation direction with respect to the ideal filter waveform.

[0033] <Second Embodiment> [Comparative Example 2] As shown in FIGS. 7A to 7C, a capacitive coupling structure 52 is provided between the via electrode portions 20 of the filter according to Comparative Example 2. In the capacitive coupling structure 52, the tip of the flat electrode 50A coupled to the via electrode portion 20A and the tip of the flat electrode 50B coupled to the via electrode portion 20B are separated from each other in a side view. Also, in the capacitive coupling structure 52, the tip of the flat electrode 50A coupled to the via electrode portion 20A and the tip of the flat electrode 50B coupled to the via electrode portion 20B overlap each other in a plan view. That is, the tip of the flat electrode 50A and the tip of the flat electrode 50B face each other. When generally describing the flat electrode, the reference numeral 50 is used, and when describing each individual flat electrode, the reference numerals 50A to 50D are used.

[0034] As shown in FIG. 8, the frequency characteristics of the filter according to Comparative Example 2 had large variations in the attenuation characteristics in the region where the frequency was low.

[0035] [Example 2] In the filter according to Example 2, a capacitive coupling structure 54 is provided between via electrode portions 20. The capacitive coupling structure 54 is provided between adjacent via electrode portions 20, respectively. Examples of the capacitive coupling structure 54 provided between the via electrode portion 20A and the via electrode portion 20B are shown in FIGS. 9A to 9C. The capacitive coupling structure 54 shown in FIGS. 9A to 9C includes two flat electrodes 50Aa and 50Ab coupled to the via electrode portion 20A, two flat electrodes 50Ba and 50Bb coupled to the via electrode portion 20B, and a flat electrode 50C. One tip portion 50Ca of the flat electrode 50C is located between the flat electrode 50Aa and the flat electrode 50Ab in a side view. The tip portion 50Ca of the flat electrode 50C and the flat electrode 50Aa are spaced apart from each other in a side view. The tip portion 50Ca of the flat electrode 50C and the flat electrode 50Ab are spaced apart from each other in a side view. The tip portion 50Ca of the flat electrode 50C and the flat electrode 50Aa overlap each other in a plan view. That is, the tip portion 50Ca of the flat electrode 50C and the flat electrode 50Aa face each other. The tip portion 50Ca of the flat electrode 50C and the flat electrode 50Ab overlap each other in a plan view. That is, the tip portion 50Ca of the flat electrode 50C and the flat electrode 50Ab face each other. The other tip portion 50Cb of the flat electrode 50C is located between the flat electrode 50Ba and the flat electrode 50Bb in a side view. The tip portion 50Cb of the flat electrode 50C and the flat electrode 50Ba are spaced apart from each other in a side view. The tip portion 50Cb of the flat electrode 50C and the flat electrode 50Bb are spaced apart from each other in a side view. The tip portion 50Cb of the flat electrode 50C and the flat electrode 50Ba overlap each other in a plan view. That is, the tip portion 50Cb of the flat electrode 50C and the flat electrode 50Ba face each other. The tip portion 50Cb of the flat electrode 50C and the flat electrode 50Bb overlap each other in a plan view. That is, the tip portion 50Cb of the flat electrode 50C and the flat electrode 50Bb face each other.

[0036] As shown in Fig. 10, the frequency characteristics of the filter according to Example 2 had little variation in the attenuation characteristics in the low-frequency region. That is, in the filter according to Example 2, there was almost no variation in the attenuation characteristics in the low-frequency region.

[0037] The capacitive coupling structure 54 provided between the via electrode portions 20 is not limited to the above-described structure. For example, a capacitive coupling structure 54 as shown in Fig. 11A may be provided between the via electrode portions 20. For example, as a capacitive coupling structure 54 in which the capacitor C1 and the capacitor C2 are connected in series, the structure shown in Fig. 11B may be adopted.

[0038] In the capacitive coupling structure 54 shown in Fig. 11B, the tip of the flat electrode 50A extending from the via electrode portion 20A and the tip of the flat electrode 50B extending from the via electrode portion 20B are separated from each other. In the capacitive coupling structure 54, the tip of the flat electrode 50A and the flat electrode 50C are separated from each other in a side view. Also, in the capacitive coupling structure 54, the tip of the flat electrode 50B and the flat electrode 50C are separated from each other in a side view. Also, in the capacitive coupling structure 54, the tip of the flat electrode 50A and the flat electrode 50C overlap each other in a plan view. That is, the tip of the flat electrode 50A and the flat electrode 50C face each other. Also, in the capacitive coupling structure 54, the tip of the flat electrode 50B and the flat electrode 50C overlap each other in a plan view. That is, the tip of the flat electrode 50B and the flat electrode 50C face each other.

[0039] In this case, the capacitance C1 formed by the flat electrode 50A and the flat electrode 50C and the capacitance C2 formed by the flat electrode 50B and the flat electrode 50C may be the same or different. The upper diagram in Fig. 11C shows an example in which the capacitance C1 and the capacitance C2 are the same. The lower diagram in Fig. 11C shows an example in which the capacitance C2 is made larger than the capacitance C1 by shifting the position of the flat electrode 50C. By shifting the position of the flat electrode 50C, the capacitance C1 may be made larger than the capacitance C2.

[0040] In addition, the capacitive coupling structure 54 provided between the via electrode portions 20 is not limited to the above-described structure. For example, a capacitive coupling structure 54 as shown in FIG. 12A may be provided between the via electrode portions 20. For example, as a capacitive coupling structure 54 in which the capacitor C1 and the capacitor C2 are connected in parallel, the structure shown in FIG. 12B may be adopted.

[0041] In the capacitive coupling structure 54 shown in FIG. 12B, the tip of the flat electrode 50A extending from the via electrode portion 20A and the tip of the flat electrode 50B extending from the via electrode portion 20B overlap each other in plan view. The flat electrode 50A and the flat electrode 50B are separated from each other in side view. That is, the tip of the flat electrode 50A and the tip of the flat electrode 50B face each other. Further, in the capacitive coupling structure 54 shown in FIG. 12B, the tip of the flat electrode 50C extending from the via electrode portion 20A and the tip of the flat electrode 50D extending from the via electrode portion 20B overlap each other in plan view. The flat electrode 50C and the flat electrode 50D are separated from each other in side view. That is, the tip of the flat electrode 50C and the tip of the flat electrode 50D face each other. Note that the flat electrode 50A and the flat electrode 50D may be formed at the same layer position, and the flat electrode 50B and the flat electrode 50C may be formed at the same layer position. In this case, the layer in which the flat electrode 50A and the flat electrode 50D are formed and the layer in which the flat electrode 50B and the flat electrode 50C are formed are different from each other.

[0042] Further, as shown in FIG. 12B, by changing the relative positional relationship between the flat electrode 50A and the flat electrode 50B, the capacitance C1 between the flat electrode 50A and the flat electrode 50B may be appropriately adjusted. Also, by changing the relative positional relationship between the flat electrode 50C and the flat electrode 50D, the capacitance C2 between the flat electrode 50C and the flat electrode 50D may be appropriately adjusted.

[0043] In the capacitive coupling structure 54 described above with reference to FIGS. 11A to 11C, the capacitance between the flat electrodes 50 can be adjusted by shifting the flat electrode 50C relatively in one direction (the extending direction of the flat electrode). Also, in the capacitive coupling structure 54 described above with reference to FIGS. 12A and 12B, the capacitance between the flat electrodes 50 can be adjusted by shifting the flat electrodes 50A and 50D relatively in one direction (the extending direction of the flat electrode). The adjustment of the capacitance between the flat electrodes 50 is not limited to the above. For example, as shown in FIGS. 13A and 13B, the capacitance between the flat electrodes 50 may be adjusted by shifting the flat electrode 50C relatively in two directions (the extending direction of the flat electrode and the direction orthogonal thereto). In the example shown in FIGS. 13A and 13B, one end of the flat electrode 50C overlaps at least one corner of the flat electrode 50A in plan view. Also, in the example shown in FIGS. 13A and 13B, the other end of the flat electrode 50C overlaps at least one corner of the flat electrode 50B in plan view.

[0044] Also, as shown in FIGS. 13C and 13D, the capacitance between the flat electrodes 50 may be adjusted by shifting the flat electrode 50A and the flat electrode 50B relatively in two directions (the extending direction of the flat electrode and the direction orthogonal thereto). Also, the capacitance between the flat electrodes 50 may be adjusted by shifting the flat electrode 50C and the flat electrode 50D relatively in two directions (the extending direction of the flat electrode and the direction orthogonal thereto). The flat electrode 50A and the flat electrode 50B may be shifted relatively in two directions and the flat electrode 50C and the flat electrode 50D may be shifted relatively in two directions. In the example shown in FIGS. 13C and 13D, the flat electrode 50A overlaps at least one corner of the flat electrode 50B in plan view. Also, in the example shown in FIGS. 13C and 13D, the flat electrode 50D overlaps at least one corner of the flat electrode 50C in plan view.

[0045] <Third Embodiment> In the filter according to Comparative Example 3, as shown in FIG. 14, capacitive electrodes 60ab, 60ac, 60ba, and 60bc are provided. Also, in the filter according to the third embodiment, as shown in FIG. 16, capacitive electrodes 60ab, 60ac, 60ba, and 60bc are provided. The via electrode portion 20A has a capacitive electrode 60ab extending toward the via electrode portion 20B and a capacitive electrode 60ac extending toward the via electrode portion 20C. The via electrode portion 20B has a capacitive electrode 60ba extending toward the via electrode portion 20A and a capacitive electrode 60bc extending toward the via electrode portion 20C.

[0046] Also, in the filter according to Comparative Example 3, as shown in FIG. 14, capacitive electrodes 60dc, 60de, 60ec, and 60ed are provided. Also, in the filter according to the third embodiment, as shown in FIG. 16, capacitive electrodes 60dc, 60de, 60ec, and 60ed are provided. The via electrode portion 20D has a capacitive electrode 60dc extending toward the via electrode portion 20C and a capacitive electrode 60de extending toward the via electrode portion 20E. The via electrode portion 20E has a capacitive electrode 60ec extending toward the via electrode portion 20C and a capacitive electrode 60ed extending toward the via electrode portion 20D.

[0047] In addition, as shown in FIG. 14, the filter according to Comparative Example 3 is provided with capacitive electrodes 60ca, 60cb, 60cd, and 60ce. Further, as shown in FIG. 16, the filter according to the third embodiment is provided with capacitive electrodes 60ca, 60cb, 60cd, and 60ce. The via electrode portion 20C has a capacitive electrode 60ca extending toward the via electrode portion 20A, a capacitive electrode 60cb extending toward the via electrode portion 20B, a capacitive electrode 60cd extending toward the via electrode portion 20D, and a capacitive electrode 60ce extending toward the via electrode portion 20E. When generally describing capacitive electrodes, the reference numeral 60 is used, and when describing individual capacitive electrodes, the reference numerals 60ab, 60ac, 60ba, 60bc, 60dc, 60de, 60ec, 60ed, 60ca, 60cb, 60cd, and 60ce are used. The capacitive electrodes 60 that are close to each other are capacitively coupled. A capacitive coupling structure 61A is formed by the capacitive electrode 60ac and the capacitive electrode 60ca that are close to each other. A capacitive coupling structure 61B is formed by the capacitive electrode 60ec and the capacitive electrode 60ce that are close to each other. A capacitive coupling structure 61C is formed by the capacitive electrode 60ab and the capacitive electrode 60ba that are close to each other. A capacitive coupling structure 61D is formed by the capacitive electrode 60de and the capacitive electrode 60ed that are close to each other. A capacitive coupling structure 61E is formed by the capacitive electrode 60bc and the capacitive electrode 60cb that are close to each other. A capacitive coupling structure 61F is formed by the capacitive electrode 60cd and the capacitive electrode 60dc that are close to each other.

[0048] [Comparative Example 3] In Comparative Example 3, as shown in FIG. 14, regardless of the sensitivity of the elements constituting the filter, the distance g1 between each pair of capacitive electrodes 60 (the distance in the direction orthogonal to the extending direction of the capacitive electrode 60) is set to be the same. That is, in the filter according to Comparative Example 3, regardless of the coupling degree between the resonators 11, the distance g1 between each pair of capacitive electrodes 60 is set to be the same. In Comparative Example 3, the sensitivity between the capacitive electrode 60ac and the capacitive electrode 60ca was relatively high. That is, in Comparative Example 3, the coupling degree between the resonator 11A and the resonator 11C was relatively high. Also, in Comparative Example 3, the sensitivity between the capacitive electrode 60ec and the capacitive electrode 60ce was relatively high. That is, the coupling degree between the resonator 11C and the resonator 11E was relatively high.

[0049] As shown in FIG. 15, the frequency characteristics of the filter according to Comparative Example 3 had large variations in the attenuation characteristics in the high-frequency region.

[0050] [Example 3] In Example 3, as shown in FIG. 16, according to the sensitivity of the elements constituting the filter 10, the distance between each pair of capacitive electrodes 60 was appropriately set. That is, in Example 3, according to the coupling degree between the resonators 11, the distance between each pair of capacitive electrodes 60 was appropriately set. In FIG. 16, the distance g2 between the capacitive electrode 60ac and the capacitive electrode 60ca and the distance g2 between the capacitive electrode 60ec and the capacitive electrode 60ce were set to be larger than the distance g1 between the other capacitive electrodes 60. That is, in Example 3, the distance g2 between the capacitive electrodes 60 in the capacitive coupling structures 61A and 61B was set to be larger than the distance g1 between the capacitive electrodes 60 in the capacitive coupling structures 61C to 61F.

[0051] As a result, as shown in FIG. 17, the frequency characteristics of the filter according to Example 3 had almost no variation in the attenuation characteristics in the high-frequency region and were good. That is, the filter according to Example 3 can reduce the variation in the attenuation characteristics.

[0052] Thus, in this embodiment, by arranging the resonator 11A closest to the input / output terminal 22A and the resonator 11E closest to the input / output terminal 22B in a point-symmetrical positional relationship, variations in the coupling degree between the resonators 11 can be suppressed.

[0053] For example, as shown in FIG. 2, in the case of a five-stage filter, the first-stage resonator 11A and the fifth-stage resonator 11E are arranged at positions that are point-symmetrical with respect to the center of the dielectric substrate 14C in a plan view.

[0054] Furthermore, instead of simply facing each other, the structures of the coupling capacitance and the bypass capacitance are sandwiched between two-layer flat electrodes 50 and connected in series, so that variations can be suppressed.

[0055] By appropriately arranging the distance between the capacitive electrodes 60 formed in the same layer according to the sensitivity of the elements constituting the filter, variations in the filter characteristics can be reduced.

[0056] [Second Embodiment] The filter according to the second embodiment will be described. FIG. 18 is a perspective view showing the filter according to this embodiment. FIG. 19 is a plan view showing the filter according to this embodiment. FIGS. 20A and 20B are cross-sectional views showing a part of the filter according to this embodiment. FIGS. 21 and 22 are perspective views showing the filter according to this embodiment. FIG. 23 is a plan view showing the filter according to this embodiment. FIG. 24 is a perspective view showing the filter according to this embodiment. FIG. 25 is a plan view showing the filter according to this embodiment. FIG. 26 is a perspective view showing the filter according to this embodiment. FIGS. 27 and 28 are plan views showing the filter according to this embodiment. For the sake of simplicity, in FIGS. 18 to 28, some components are appropriately omitted.

[0057] The filter 10 according to this embodiment is provided with four resonators 11. That is, the filter 10 according to this embodiment is provided with a resonator 11A, a resonator 11B, a resonator 11D, and a resonator 11E. The filter 10 according to this embodiment does not include a resonator 11C (see FIG. 1).

[0058] The resonator (first resonator) 11A and the resonator (second resonator) 11E are arranged at point-symmetrical positions with the center C of the dielectric substrate 14 in a plan view as the center of symmetry. The resonator (third resonator) 11B and the resonator (fourth resonator) 11D are arranged at point-symmetrical positions with the center C of the dielectric substrate 14 in a plan view as the center of symmetry.

[0059] The position of the resonator 11B in the X direction is between the position of the resonator 11A in the X direction and the position of the center C of the dielectric substrate 14 in the X direction.

[0060] The position of the resonator 11D in the X direction is between the position of the resonator 11E in the X direction and the position of the center C of the dielectric substrate 14 in the X direction.

[0061] The resonator 11A and the resonator 11B are arranged adjacent to each other. The resonator 11B and the resonator 11D are arranged adjacent to each other. The resonator 11D and the resonator 11E are arranged adjacent to each other.

[0062] As shown in FIG. 19, the via electrode portions 20A, 20B, 20D, and 20E are shifted from each other in the X direction. The position of the center P2 of the via electrode portion 20B in the X direction is between the position of the center P1 of the via electrode portion 20A in the X direction and the position of the center P4 of the via electrode portion 20D in the X direction. The position of the center P4 of the via electrode portion 20D in the X direction is between the position of the center P2 of the via electrode portion 20B in the X direction and the position of the center P5 of the via electrode portion 20E in the X direction.

[0063] The position of the center P1 of the via electrode portion 20A in the Y direction is equivalent to the position of the center P4 of the via electrode portion 20D in the Y direction. The position of the center P2 of the via electrode portion 20B in the Y direction is equivalent to the position of the center P5 of the via electrode portion 20E in the Y direction. The via electrode portions 20B and 20E are shifted in the Y direction with respect to the via electrode portions 20A and 20D. The via electrode portions 20A and 20D are located on the side of the side surface 14e. That is, the distance between the via electrode portions 20A, 20D and the shielding conductor 12Ca is smaller than the distance between the via electrode portions 20A, 20D and the shielding conductor 12Cb. The via electrode portions 20B and 20E are located on the side of the side surface 14f. That is, the distance between the via electrode portions 20B, 20E and the shielding conductor 12Cb is smaller than the distance between the via electrode portions 20B, 20E and the shielding conductor 12Ca.

[0064] As described above, in this embodiment, not only are the positions of the centers P1 of the via electrode portions 20A and P2 of the via electrode portions 20B shifted from each other in the X direction, but they are also shifted from each other in the Y direction. Therefore, according to this embodiment, the distance between the via electrode portions 20A and 20B can be increased without increasing the distance in the X direction between the via electrode portions 20A and 20B. Further, according to this embodiment, not only are the positions of the center P2 of the via electrode portion 20B and the center P4 of the via electrode portion 20D shifted from each other in the X direction, but they are also shifted from each other in the Y direction. Therefore, according to this embodiment, the distance between the via electrode portions 20B and 20D can be increased without increasing the distance in the X direction between the via electrode portions 20B and 20D. Further, according to this embodiment, not only are the positions of the center P4 of the via electrode portion 20D and the center P5 of the via electrode portion 20E shifted from each other in the X direction, but they are also shifted from each other in the Y direction. Therefore, according to this embodiment, the distance between the via electrode portions 20D and 20E can be increased without increasing the distance in the X direction between the via electrode portions 20D and 20E. Thus, according to this embodiment, the coupling degree between adjacent resonators 11 can be reduced without increasing the distance in the X direction between adjacent resonators 11. Therefore, according to this embodiment, a filter 10 with good characteristics can be obtained while keeping the size of the filter 10 small.

[0065] Of the four via electrode portions 20A, 20B, 20D, and 20E, the via electrode portion 20 closest to the input / output terminal 22A is the via electrode portion 20A. The distance in the X direction between the position of the center P1 of the via electrode portion 20A and the position of the input / output terminal 22A is smaller than the distance in the X direction between the position of the center P2 of the via electrode portion 20B and the position of the input / output terminal 22A. The distance in the Y direction between the position of the center P1 of the via electrode portion 20A and the position of the input / output terminal 22A is equal to the distance in the Y direction between the position of the center P2 of the via electrode portion 20B and the position of the input / output terminal 22A.

[0066] Of the four via electrode portions 20A, 20B, 20D, and 20E, the via electrode portion 20 closest to the input / output terminal 22B is the via electrode portion 20E. The distance in the X direction between the position of the center P5 of the via electrode portion 20E and the position of the input / output terminal 22B is smaller than the distance in the X direction between the position of the center P4 of the via electrode portion 20D and the position of the input / output terminal 22B. The distance in the Y direction between the position of the center P5 of the via electrode portion 20E and the position of the input / output terminal 22B is equal to the distance in the Y direction between the position of the center P4 of the via electrode portion 20D and the position of the input / output terminal 22B.

[0067] The resonators 11A, 11B, 11D, and 11E are arranged at point-symmetrical positions with the center C of the dielectric substrate 14 in plan view as the center of symmetry. That is, the resonator 11A and the resonator 11E are arranged at point-symmetrical positions with the center C of the dielectric substrate 14 in plan view as the center of symmetry. Also, the resonator 11B and the resonator 11D are arranged at point-symmetrical positions with the center C of the dielectric substrate 14 in plan view as the center of symmetry. In the present embodiment, the resonators 11A, 11B, 11D, and 11E are arranged in point symmetry in order to obtain good frequency characteristics.

[0068] The positions in the Y direction of the center P1 of the via electrode portion 20A and the center P4 of the via electrode portion 20D are located on the side 14e side with respect to the position in the Y direction of the center C of the dielectric substrate 14. The positions in the Y direction of the center P2 of the via electrode portion 20B and the center P5 of the via electrode portion 20E are located on the side 14f side with respect to the position in the Y direction of the center C of the dielectric substrate 14. The positions in the Y direction of the center of the input / output terminal 22A and the center of the input / output terminal 22B are set to be equal to the position in the Y direction of the center C of the dielectric substrate 14.

[0069] As shown in FIG. 22, coupling capacitance electrodes (flat electrodes) 70A to 70F are formed in the dielectric substrate 14. The coupling capacitance electrode 70A is provided in the resonator 11A. The coupling capacitance electrode 70B is provided in the resonator 11E. The coupling capacitance electrode 70C is provided in the resonator 11B. The coupling capacitance electrode 70D is provided in the resonator 11D. The coupling capacitance electrodes 70E and 70F are provided near the center C (see FIG. 19) of the dielectric substrate 14 in a plan view. The coupling capacitance electrodes 70A to 70F are formed in the same layer. In other words, the coupling capacitance electrodes 70A to 70F are formed on the same ceramic sheet (not shown). When explaining without distinguishing the individual coupling capacitance electrodes, the reference numeral 70 is used, and when explaining by distinguishing the individual coupling capacitance electrodes, the reference numerals 70A to 70F are used. One or more ceramic sheets (not shown) exist between the coupling capacitance electrode 70 and the capacitor electrode 18. The coupling capacitance electrode 70 can be formed, for example, by a printing method.

[0070] The coupling capacitance electrode 70 is arranged at a point-symmetric position with the center C of the dielectric substrate 14 in a plan view as the center of symmetry. That is, the coupling capacitance electrode 70A and the coupling capacitance electrode 70B are arranged at a point-symmetric position with the center C of the dielectric substrate 14 in a plan view as the center of symmetry. Also, the coupling capacitance electrode 70C and the coupling capacitance electrode 70D are also arranged at a point-symmetric position with the center C of the dielectric substrate 14 in a plan view as the center of symmetry. Further, the coupling capacitance electrode 70E and the coupling capacitance electrode 70F are also arranged at a point-symmetric position with the center C of the dielectric substrate 14 in a plan view as the center of symmetry. In the present embodiment, the coupling capacitance electrode 70 is arranged point-symmetrically in order to obtain good frequency characteristics.

[0071] The coupling capacitance electrode 70A is connected to the via electrode portion 20A. The lower surface of the coupling capacitance electrode 70A is connected to the upper surface of the capacitor electrode 18A through a part of the via electrode portion 20A.

[0072] The coupling capacitance electrode 70B is connected to the via electrode portion 20E. The lower surface of the coupling capacitance electrode 70B is connected to the upper surface of the capacitor electrode 18E through a part of the via electrode portion 20E.

[0073] The coupling capacitance electrode 70C is connected to the via electrode portion 20B. The lower surface of the coupling capacitance electrode 70C is connected to the upper surface of the capacitor electrode 18B through a part of the via electrode portion 20B.

[0074] The coupling capacitance electrode 70D is connected to the via electrode portion 20D. The lower surface of the coupling capacitance electrode 70D is connected to the upper surface of the capacitor electrode 18D through a part of the via electrode portion 20D.

[0075] As shown in FIG. 23, the coupling capacitance electrode 70A includes partial patterns (electrode patterns) 70A1 to 70A3. The partial pattern 70A1 is connected to the via electrode portion 20A. One end of the partial pattern 70A2 is connected to the partial pattern 70A1. The partial pattern 70A2 protrudes in the +X direction. One end of the partial pattern 70A3 is connected to the partial pattern 70A1. The partial pattern 70A3 protrudes in the +Y direction.

[0076] The coupling capacitance electrode 70B includes partial patterns 70B1 to 70B3. The partial pattern 70B1 is connected to the via electrode portion 20E. One end of the partial pattern 70B2 is connected to the partial pattern 70B1. The partial pattern 70B2 protrudes in the -X direction. One end of the partial pattern 70B3 is connected to the partial pattern 70B1. The partial pattern 70B3 protrudes in the -Y direction.

[0077] The coupling capacitance electrode 70C includes partial patterns 70C1 to 70C3. The partial pattern 70C1 is connected to the via electrode portion 20B. One end of the partial pattern 70C2 is connected to the partial pattern 70C1. The partial pattern 70C2 protrudes in the -X direction. One end of the partial pattern 70C3 is connected to the partial pattern 70C1. The partial pattern 70C3 protrudes in the +X direction.

[0078] The coupling capacitance electrode 70D includes partial patterns 70D1 to 70D3. The partial pattern 70D1 is connected to the via electrode portion 20D. One end of the partial pattern 70D2 is connected to the partial pattern 70D1. The partial pattern 70D2 protrudes in the +X direction. One end of the partial pattern 70D3 is connected to the partial pattern 70D1. The partial pattern 70D3 protrudes in the -X direction.

[0079] The position of the coupling capacitance electrode 70E in the Y direction is between the positions of the coupling capacitance electrodes 70A and 70D in the Y direction and the positions of the coupling capacitance electrodes 70B and 70C in the Y direction. The position of the coupling capacitance electrode 70E in the X direction is between the position of the partial pattern 70A3 provided in the coupling capacitance electrode 70A in the X direction and the position of the coupling capacitance electrode 70F in the X direction. The coupling capacitance electrode 70E is connected to the coupling capacitance electrode 70C.

[0080] The position of the coupling capacitance electrode 70F in the Y direction is between the positions of the coupling capacitance electrodes 70A and 70D in the Y direction and the positions of the coupling capacitance electrodes 70B and 70C in the Y direction. The position of the coupling capacitance electrode 70F in the X direction is between the position of the partial pattern 70B3 provided in the coupling capacitance electrode 70B in the X direction and the position of the coupling capacitance electrode 70E in the X direction. The coupling capacitance electrode 70F is connected to the coupling capacitance electrode 70D.

[0081] As shown in FIG. 22, coupling capacitance electrodes (plate electrodes) 72A to 72E are further formed in the dielectric substrate 14. The coupling capacitance electrodes 72A to 72E are formed in the same layer. In other words, the coupling capacitance electrodes 72A to 72E are formed on the same unillustrated ceramic sheet. When explaining without distinguishing the individual coupling capacitance electrodes, the reference numeral 72 is used, and when explaining by distinguishing the individual coupling capacitance electrodes, the reference numerals 72A to 72E are used. There is one or more unillustrated ceramic sheets between the coupling capacitance electrode 72 and the coupling capacitance electrode 70. The coupling capacitance electrode 72 can be formed, for example, by a printing method.

[0082] The coupling capacitance electrodes 72 are arranged at point-symmetrical positions with the center C (see FIG. 19) of the dielectric substrate 14 in plan view as the center of symmetry. That is, the coupling capacitance electrode 72A and the coupling capacitance electrode 72B are arranged at point-symmetrical positions with the center C of the dielectric substrate 14 in plan view as the center of symmetry. Also, the coupling capacitance electrode 72C and the coupling capacitance electrode 72D are also arranged at point-symmetrical positions with the center C of the dielectric substrate 14 in plan view as the center of symmetry. In the present embodiment, the coupling capacitance electrodes 72 are arranged in point symmetry in order to obtain good frequency characteristics.

[0083] As shown in FIG. 23, the longitudinal direction of the coupling capacitance electrode 72A is the Y direction. One end of the coupling capacitance electrode 72A overlaps with the coupling capacitance electrode 70A in plan view. More specifically, one end of the coupling capacitance electrode 72A overlaps with the partial pattern 70A3 in plan view. The other end of the coupling capacitance electrode 72A overlaps with the coupling capacitance electrode 70C in plan view. More specifically, the other end of the coupling capacitance electrode 72A overlaps with the partial pattern 70C2 in plan view. The coupling capacitance electrode 70A, the coupling capacitance electrode 72A, and the coupling capacitance electrode 70C constitute a capacitive coupling structure 71A.

[0084] The longitudinal direction of the coupling capacitance electrode 72B is the Y direction. One end of the coupling capacitance electrode 72B overlaps with the coupling capacitance electrode 70D in plan view. More specifically, one end of the coupling capacitance electrode 72B overlaps with the partial pattern 70D2 in plan view. The other end of the coupling capacitance electrode 72B overlaps with the coupling capacitance electrode 70B in plan view. More specifically, the other end of the coupling capacitance electrode 72B overlaps with the partial pattern 70B3 in plan view. The coupling capacitance electrode 70B, the coupling capacitance electrode 72B, and the coupling capacitance electrode 70D constitute a capacitive coupling structure 71B.

[0085] The longitudinal direction of the coupling capacitance electrode 72C is the X direction. One end of the coupling capacitance electrode 72C overlaps with the coupling capacitance electrode 70A in a plan view. More specifically, one end of the coupling capacitance electrode 72C overlaps with the partial pattern 70A2 in a plan view. The other end of the coupling capacitance electrode 72C overlaps with the coupling capacitance electrode 70D in a plan view. More specifically, the other end of the coupling capacitance electrode 72C overlaps with the partial pattern 70D3 in a plan view. The coupling capacitance electrode 70A, the coupling capacitance electrode 72C, and the coupling capacitance electrode 70D constitute a capacitive coupling structure 71C. On the extension region of the coupling capacitance electrode 72C, the via electrode part 20A and the via electrode part 20D are located. That is, the via electrode part 20A is located on the extension region of one end of the coupling capacitance electrode 72C, and the via electrode part 20D is located on the extension region of the other end of the coupling capacitance electrode 72C.

[0086] The longitudinal direction of the coupling capacitance electrode 72D is the X direction. One end of the coupling capacitance electrode 72D overlaps with the coupling capacitance electrode 70B in a plan view. More specifically, one end of the coupling capacitance electrode 72D overlaps with the partial pattern 70B2 in a plan view. The other end of the coupling capacitance electrode 72D overlaps with the coupling capacitance electrode 70C in a plan view. More specifically, the other end of the coupling capacitance electrode 72D overlaps with the partial pattern 70C3 in a plan view. The coupling capacitance electrode 70B, the coupling capacitance electrode 72D, and the coupling capacitance electrode 70C constitute a capacitive coupling structure 71D. On the extension region of the coupling capacitance electrode 72D, the via electrode part 20B and the via electrode part 20E are located. That is, the via electrode part 20E is located on the extension region of one end of the coupling capacitance electrode 72D, and the via electrode part 20B is located on the extension region of the other end of the coupling capacitance electrode 72C.

[0087] The longitudinal direction of the coupling capacitance electrode 72E is the X direction. One end of the coupling capacitance electrode 72E overlaps with the coupling capacitance electrode 70E in a plan view. The other end of the coupling capacitance electrode 72E overlaps with the coupling capacitance electrode 70F in a plan view.

[0088] The inter-electrode distance d1 (see Fig. 20A), which is the distance between the coupling capacitance electrode 72 and the coupling capacitance electrode 70 in the thickness direction of the coupling capacitance electrode 72, is, for example, about 0.12 mm but is not limited thereto. The inter-electrode distance d1 may be, for example, 0.06 mm. The inter-electrode distance d1 is not limited to these values.

[0089] The dimension W12 of the coupling capacitance electrode 72A in the width direction (X direction) of the coupling capacitance electrode 72A is smaller than the dimension W11 of the partial pattern 70A3 in the width direction of the coupling capacitance electrode 72A. That is, the dimension W12 of the coupling capacitance electrode 72A in the X direction is smaller than the dimension W11 of the partial pattern 70A3 in the X direction. On both sides of the region (site) 73A1 where the coupling capacitance electrode 72A and the partial pattern 70A3 overlap in plan view, there are regions (sites) 73A2 and 73A3 where the coupling capacitance electrode 72A does not overlap with the partial pattern 70A3. Region 73A2 is located on the -X side with respect to region 73A1. Region 73A3 is located on the +X side with respect to region 73A1. The dimension W11 of the partial pattern 70A3 in the width direction of the coupling capacitance electrode 72A is set to, for example, 0.54 mm. The dimension W12 of the coupling capacitance electrode 72A in the width direction of the coupling capacitance electrode 72A is set to, for example, 0.18 mm.

[0090] The dimension W12 of the coupling capacitance electrode 72A in the width direction of the coupling capacitance electrode 72A is smaller than the dimension of the partial pattern 70C2 in the width direction of the coupling capacitance electrode 72A. That is, the dimension W12 of the coupling capacitance electrode 72A in the X direction is smaller than the dimension of the partial pattern 70C2 in the X direction. On both sides of the region 73B1 where the coupling capacitance electrode 72A and the partial pattern 70C2 overlap in plan view, there are regions 73B2 and 73B3 where the coupling capacitance electrode 72A does not overlap with the partial pattern 70C2. Region 73B2 is located on the -X side with respect to region 73B1. Region 73B3 is located on the +X side with respect to region 73B1.

[0091] The dimension W12 of the coupling capacitance electrode 72B in the width direction (X direction) of the coupling capacitance electrode 72B is smaller than the dimension W11 of the partial pattern 70B3 in the width direction of the coupling capacitance electrode 72B. That is, the dimension W12 of the coupling capacitance electrode 72B in the X direction is smaller than the dimension W11 of the partial pattern 70B3 in the X direction. On both sides of the region 73C1 where the coupling capacitance electrode 72B and the partial pattern 70B3 overlap in plan view, there are regions 73C2 and 73C3 where the coupling capacitance electrode 72B does not overlap with the partial pattern 70B3. The region 73C2 is located on the -X side with respect to the region 73C1. The region 73C3 is located on the +X side with respect to the region 73C1. The dimension W11 of the partial pattern 70B3 in the width direction of the coupling capacitance electrode 72B is set to, for example, 0.54 mm. The dimension W12 of the coupling capacitance electrode 72B in the width direction of the coupling capacitance electrode 72B is set to, for example, 0.18 mm.

[0092] The dimension W12 of the coupling capacitance electrode 72B in the width direction of the coupling capacitance electrode 72B is smaller than the dimension W11 of the partial pattern 70D2 in the width direction of the coupling capacitance electrode 72B. That is, the dimension W12 of the coupling capacitance electrode 72B in the X direction is smaller than the dimension W11 of the partial pattern 70D2 in the X direction. On both sides of the region 73D1 where the coupling capacitance electrode 72B and the partial pattern 70D2 overlap in plan view, there are regions 73D2 and 73D3 where the coupling capacitance electrode 72B does not overlap with the partial pattern 70D2. The region 73D2 is located on the -X side with respect to the region 73D1. The region 73D3 is located on the +X side with respect to the region 73D1.

[0093] The dimension W22 of the coupling capacitance electrode 72C in the width direction (Y direction) of the coupling capacitance electrode 72C is smaller than the dimension W21 of the partial pattern 70A2 in the width direction of the coupling capacitance electrode 72C. That is, the dimension W22 of the coupling capacitance electrode 72C in the Y direction is smaller than the dimension W21 of the partial pattern 70A2 in the Y direction. On both sides of the region 73E1 where the coupling capacitance electrode 72C and the partial pattern 70A2 overlap in plan view, there are regions 73E2 and 73E3 where the coupling capacitance electrode 72C does not overlap with the partial pattern 70A2. The region 73E2 is located on the -Y side with respect to the region 73E1. The region 73E3 is located on the +Y side with respect to the region 73E1. The dimension W21 of the partial pattern 70A2 in the width direction of the coupling capacitance electrode 72C is set to, for example, 0.56 mm. The dimension W22 of the coupling capacitance electrode 72C in the width direction of the coupling capacitance electrode 72C is set to, for example, 0.34 mm.

[0094] The dimension W22 of the coupling capacitance electrode 72C in the width direction of the coupling capacitance electrode 72C is smaller than the dimension W21 of the partial pattern 70D3 in the width direction of the coupling capacitance electrode 72C. That is, the dimension W22 of the coupling capacitance electrode 72C in the Y direction is smaller than the dimension W21 of the partial pattern 70D3 in the Y direction. On both sides of the region 73F1 where the coupling capacitance electrode 72C and the partial pattern 70D3 overlap in plan view, there are regions 73F2 and 73F3 where the coupling capacitance electrode 72C does not overlap with the partial pattern 70D3. The region 73F2 is located on the -Y side with respect to the region 73F1. The region 73F3 is located on the +Y side with respect to the region 73F1. The dimension W21 of the partial pattern 70D3 in the width direction of the coupling capacitance electrode 72C is set to, for example, 0.56 mm.

[0095] The dimension W22 of the coupling capacitance electrode 72D in the width direction (Y direction) of the coupling capacitance electrode 72D is smaller than the dimension W21 of the partial pattern 70C3 in the width direction of the coupling capacitance electrode 72D. That is, the dimension W22 of the coupling capacitance electrode 72D in the Y direction is smaller than the dimension W21 of the partial pattern 70C3 in the Y direction. On both sides of the region 73G1 where the coupling capacitance electrode 72D and the partial pattern 70C3 overlap in plan view, there are regions 73G2 and 73G3 where the coupling capacitance electrode 72D does not overlap with the partial pattern 70C3. The region 73G2 is located on the -Y side with respect to the region 73G1. The region 73G3 is located on the +Y side with respect to the region 73G1. The dimension W21 of the partial pattern 70C3 in the width direction of the coupling capacitance electrode 72D is set to, for example, 0.56 mm. The dimension W22 of the coupling capacitance electrode 72D in the width direction of the coupling capacitance electrode 72D is set to, for example, 0.34 mm.

[0096] The dimension W22 of the coupling capacitance electrode 72D in the width direction of the coupling capacitance electrode 72D is smaller than the dimension W21 of the partial pattern 70B2 in the width direction of the coupling capacitance electrode 72D. That is, the dimension W22 of the coupling capacitance electrode 72D in the Y direction is smaller than the dimension W21 of the partial pattern 70B2 in the Y direction. On both sides of the region 73H1 where the coupling capacitance electrode 72D and the partial pattern 70B2 overlap in plan view, there are regions 73H2 and 73H3 where the coupling capacitance electrode 72D does not overlap with the partial pattern 70B2. The region 73H2 is located on the -Y side with respect to the region 73H1. The region 73H3 is located on the +Y side with respect to the region 73H1. The dimension W21 of the partial pattern 70B2 in the width direction of the coupling capacitance electrode 72D is set to, for example, 0.56 mm.

[0097] The dimension difference ΔW1, which is a value obtained by subtracting the dimension W12 of the coupling capacitance electrodes 72A and 72B in the width direction of the coupling capacitance electrodes 72A and 72B from the dimension W11 of the partial patterns 70A3 and 70B3 in the width direction of the coupling capacitance electrodes 72A and 72B, is preferably 1.4 times or more the electrode distance d1. More preferably, the dimension difference ΔW1, that is, the dimension difference (W11 - W12), is 2.6 times or more the electrode distance d1. In the present embodiment, the dimension difference ΔW1 is set to 3 times the electrode distance d1.

[0098] Since the dimension difference ΔW1 is set to be relatively large as described above, the dimension L1 in the X direction of the regions 73A2, 73A3, 73B2, 73B3, 73C2, 73C3, 73D2, and 73D3 is relatively large. When the dimension W11 of the partial patterns 70A3 and 70B3 in the width direction of the coupling capacitance electrodes 72A and 72B is 0.54 mm and the dimension W12 of the coupling capacitance electrodes 72A and 72B in the width direction of the coupling capacitance electrodes 72A and 72B is 0.18 mm, the dimension difference ΔW1 is 0.36 mm. When the dimension difference ΔW1 is 0.36 mm, the dimension L1 is 0.18 mm. In this case, the dimension L1 is, for example, 1.5 times the electrode distance d1. Thus, when the dimension difference ΔW1 is 3 times the electrode distance d1, the dimension L1 is, for example, 1.5 times the electrode distance d1.

[0099] The dimension difference ΔW2, which is a value obtained by subtracting the dimension W22 of the coupling capacitance electrodes 72C and 72D in the width direction of the coupling capacitance electrodes 72C and 72D from the dimension W21 of the partial patterns 70A2, 70B2, 70C3, and 70D3 in the width direction of the coupling capacitance electrodes 72C and 72D, is preferably 1.4 times or more the electrode distance d1. In the present embodiment, the dimension difference ΔW2, that is, the dimension difference (W21 - W22), is set to 1.84 times the electrode distance d1.

[0100] Since the dimensional difference ΔW2 is set to be relatively large as described above, the dimension L2 in the Y direction of the regions 73E2, 73E3, 73F2, 73F3, 73G2, 73G3, 73H2, and 73H3 is relatively large. When the dimension W21 of the partial patterns 70A2, 70B2, 70C3, and 70D3 in the width direction of the coupling capacitance electrodes 72C and 72D is 0.56 mm and the dimension W22 of the coupling capacitance electrodes 72C and 72D in the width direction of the coupling capacitance electrodes 72C and 72D is 0.34 mm, the dimensional difference ΔW2 is 0.22 mm. When the dimensional difference ΔW2 is 0.22 mm, the dimension L2 is 0.11 mm. In this case, the dimension L2 is, for example, 0.92 times the inter-electrode distance d1. Thus, when the dimensional difference ΔW2 is 1.84 times the inter-electrode distance d1, the dimension L2 is 0.92 times the inter-electrode distance d1.

[0101] The maximum value of the misalignment during manufacturing is, for example, about 0.03 mm. When the maximum value of the misalignment during manufacturing is 0.03 mm, the dimensions L1 and L2 can be set to, for example, 0.03 mm. In contrast, in the present embodiment, the dimensions L1 and L2 are set to be relatively large. In the present embodiment, the reason for setting the dimensions L1 and L2 to be relatively large is as follows. That is, when the dimensions L1 and L2 are relatively small, if a certain degree of misalignment occurs during manufacturing, the capacitance of the capacitive coupling structures 71A to 71D fluctuates greatly. When the capacitance of the capacitive coupling structures 71A to 71D fluctuates greatly, good filter characteristics cannot be obtained. When the dimensions L1 and L2 are relatively large, even if a certain degree of misalignment occurs during manufacturing, the capacitance of the capacitive coupling structures 71A to 71D does not fluctuate much. For such reasons, in the present embodiment, the dimensions L1 and L2 are set to be relatively large.

[0102] The dimension L2 is set to be smaller than the dimension L1 for the following reasons. That is, from the viewpoint of suppressing fluctuations in the capacitance of the capacitive coupling structure 71C due to misalignment during manufacturing, it is preferable to make the dimension L2 relatively large. When the dimension L2 is set relatively large, in order to secure the areas 73E1, 73F1, 73G1, 73H1 where the coupling capacitance electrodes 72C and the partial patterns 70A2, 70D3, 70B2, 70C3 overlap in a plan view, it is preferable to increase the dimensions of the coupling capacitance electrodes 72C, 72D in the X direction. However, when the dimension of the coupling capacitance electrode 72C in the X direction is increased, the distance in the X direction between the coupling capacitance electrode 72C and the via electrode portion 20A becomes shorter, and the distance in the X direction between the coupling capacitance electrode 72C and the via electrode portion 20D becomes shorter. Also, when the dimension of the coupling capacitance electrode 72D in the X direction is increased, the distance in the X direction between the coupling capacitance electrode 72D and the via electrode portion 20B becomes shorter, and the distance in the X direction between the coupling capacitance electrode 72D and the via electrode portion 20E becomes shorter. When the distance in the X direction between the coupling capacitance electrode 72C and the via electrode portion 20A becomes shorter and the distance in the X direction between the coupling capacitance electrode 72C and the via electrode portion 20D becomes shorter, there is concern that it may have an adverse effect on the filter characteristics. Also, when the distance in the X direction between the coupling capacitance electrode 72D and the via electrode portion 20B becomes shorter and the distance in the X direction between the coupling capacitance electrode 72D and the via electrode portion 20E becomes shorter, there is concern that it may have an adverse effect on the filter characteristics. On the other hand, none of the via electrode portions 20 are located on the extension regions of at least one end of the coupling capacitance electrodes 72A, 72B. The via electrode portion 20B is arranged at a position spaced in the +X direction from the coupling capacitance electrode 72A. For this reason, even if the coupling capacitance electrode 72A is extended in the +Y direction, the distance between the coupling capacitance electrode 72A and the via electrode portion 20B does not become smaller. Also, the via electrode portion 20D is arranged at a position spaced in the -X direction from the coupling capacitance electrode 72B. For this reason, even if the coupling capacitance electrode 72B is extended in the -Y direction, the distance between the coupling capacitance electrode 72B and the via electrode portion 20D does not become smaller. Even if the coupling capacitance electrode 72A is extended in the +Y direction, no particular problem occurs. Also, even if the coupling capacitance electrode 72B is extended in the -Y direction, no particular problem occurs.For such reasons, the dimension L2 is set to be smaller than the dimension L1.

[0103] The dimension of the coupling capacitance electrode 72E in the width direction of the coupling capacitance electrode 72E is smaller than the dimension of the coupling capacitance electrode 70E in the width direction of the coupling capacitance electrode 72E. That is, the dimension of the coupling capacitance electrode 72E in the Y direction is smaller than the dimension of the coupling capacitance electrode 70E in the Y direction. The dimension of the coupling capacitance electrode 70E in the width direction of the coupling capacitance electrode 72E is set to, for example, 0.5 mm. The dimension of the coupling capacitance electrode 72E in the width direction of the coupling capacitance electrode 72E is set to, for example, 0.29 mm.

[0104] The dimension of the coupling capacitance electrode 72E in the width direction of the coupling capacitance electrode 72E is smaller than the dimension of the coupling capacitance electrode 70F in the width direction of the coupling capacitance electrode 72E. That is, the dimension of the coupling capacitance electrode 72E in the Y direction is smaller than the dimension of the coupling capacitance electrode 70F in the Y direction. The dimension of the coupling capacitance electrode 70F in the width direction of the coupling capacitance electrode 72E is set to, for example, 0.5 mm.

[0105] The dimension difference ΔW3, which is a value obtained by subtracting the dimension W32 of the coupling capacitance electrode 72E in the width direction of the coupling capacitance electrode 72E from the dimensions W31 of the coupling capacitance electrodes 70E and 70F in the width direction of the coupling capacitance electrode 72E, is preferably 1.4 times or more the electrode distance d1. In this embodiment, the dimension difference ΔW3, that is, the dimension difference (W31 - W32), is set to 1.75 times the electrode distance d1.

[0106] As shown in FIG. 22, coupling capacitance electrodes (flat electrodes) 74A and 74B are formed in the dielectric substrate 14. The coupling capacitance electrodes 74A and 74B are formed in the same layer. In other words, the coupling capacitance electrodes 74A and 74B are formed on the same ceramic sheet (not shown). When explaining without distinguishing the individual coupling capacitance electrodes, the reference numeral 74 is used, and when explaining by distinguishing the individual coupling capacitance electrodes, the reference numerals 74A and 74B are used. There is one or more ceramic sheets (not shown) between the coupling capacitance electrode 72 and the coupling capacitance electrode 74.

[0107] The coupling capacitance electrodes 74 are arranged at point-symmetrical positions with the center C (see FIG. 19) of the dielectric substrate 14 in plan view as the center of symmetry. That is, the coupling capacitance electrode 74A and the coupling capacitance electrode 74B are arranged at point-symmetrical positions with the center C of the dielectric substrate 14 in plan view as the center of symmetry. In the present embodiment, the coupling capacitance electrodes 74 are arranged in point symmetry in order to obtain good frequency characteristics.

[0108] As shown in FIG. 23, the coupling capacitance electrode 74A includes sub-patterns (electrode patterns) 74A1 to 74A3. The sub-pattern 74A1 is connected to the via electrode portion 20B. The sub-pattern 74A3 is located on the -Y side with respect to the sub-pattern 74A1. The sub-pattern 74A3 is connected to the sub-pattern 74A1 via the sub-pattern 74A2. The sub-pattern 74A3 overlaps with the coupling capacitance electrode 70E in plan view. The size of the sub-pattern 74A3 is equivalent to the size of the coupling capacitance electrode 70E. One end of the coupling capacitance electrode 72E is sandwiched between the coupling capacitance electrode 70E and the sub-pattern 74A3.

[0109] The coupling capacitance electrode 74B includes sub-patterns 74B1 to 74B3. The sub-pattern 74B1 is connected to the via electrode portion 20D. The sub-pattern 74B3 is located on the +Y side with respect to the sub-pattern 74B1. The sub-pattern 74B3 is connected to the sub-pattern 74B1 via the sub-pattern 74B2. The sub-pattern 74B3 overlaps with the coupling capacitance electrode 70F in plan view. The size of the sub-pattern 74B3 is equivalent to the size of the coupling capacitance electrode 70F. The other end of the coupling capacitance electrode 72E is sandwiched between the coupling capacitance electrode 70F and the sub-pattern 74B3. The coupling capacitance electrode 70E, the coupling capacitance electrode 70F, the coupling capacitance electrode 72E, the coupling capacitance electrode 74A, and the coupling capacitance electrode 74B constitute a capacitive coupling structure 71E.

[0110] As shown in FIG. 24, coupling capacitance electrodes (comb electrodes, capacitance electrodes) 76A to 76D are further formed in the dielectric substrate 14. The coupling capacitance electrodes 76A to 76D are formed in the same layer. In other words, the coupling capacitance electrodes 76A to 76D are formed on the same unillustrated ceramic sheet. When explaining without distinguishing the individual coupling capacitance electrodes, the reference numeral 76 is used, and when explaining by distinguishing the individual coupling capacitance electrodes, the reference numerals 76A to 76D are used. There are one or more unillustrated ceramic sheets between the coupling capacitance electrode 74 (see FIG. 22) and the coupling capacitance electrode 76.

[0111] The coupling capacitance electrodes 76 are arranged at point-symmetrical positions with the center C (see FIG. 19) of the dielectric substrate 14 in plan view as the center of symmetry. That is, the coupling capacitance electrode 76A and the coupling capacitance electrode 76B are arranged at point-symmetrical positions with the center C of the dielectric substrate 14 in plan view as the center of symmetry. Also, the coupling capacitance electrode 76C and the coupling capacitance electrode 76D are arranged at point-symmetrical positions with the center C of the dielectric substrate 14 in plan view as the center of symmetry. In the present embodiment, the coupling capacitance electrodes 76 are arranged point-symmetrically in order to obtain good frequency characteristics.

[0112] As shown in FIG. 25, the coupling capacitance electrode 76A includes partial patterns (electrode patterns) 76A1 to 76A4. The partial pattern 76A1 is connected to the via electrode portion 20A. The longitudinal direction of the partial pattern 76A2 is the X direction. One end of the partial pattern 76A2 is connected to the partial pattern 76A1. The partial pattern 76A2 protrudes in the +X direction. One end of the partial pattern 76A3 is connected to the other end of the partial pattern 76A2. The longitudinal direction of the partial pattern 76A3 is the Y direction. The partial pattern 76A3 protrudes in the -Y direction. That is, the partial pattern 76A3 protrudes toward the side surface 14e. One end of the partial pattern 76A4 is connected to the partial pattern 76A1. The longitudinal direction of the partial pattern 76A4 is the Y direction. The partial pattern 76A4 protrudes in the +Y direction. The partial pattern 76A4 protrudes along the longitudinal direction of the partial pattern 76A3.

[0113] The coupling capacitance electrode 76B includes sub-patterns 76B1 to 76B4. The sub-pattern 76B1 is connected to the via electrode portion 20E. The longitudinal direction of the sub-pattern 76B2 is the X direction. One end of the sub-pattern 76B2 is connected to the sub-pattern 76B1. The sub-pattern 76B2 protrudes in the -X direction. One end of the sub-pattern 76B3 is connected to the other end of the sub-pattern 76B2. The longitudinal direction of the sub-pattern 76B3 is the Y direction. The sub-pattern 76B3 protrudes in the +Y direction. The sub-pattern 76B3 protrudes along the longitudinal direction of the sub-pattern 76A3. One end of the sub-pattern 76B4 is connected to the sub-pattern 76B1. The longitudinal direction of the sub-pattern 76B4 is the Y direction. The sub-pattern 76B4 protrudes in the -Y direction. The sub-pattern 76B4 protrudes along the longitudinal direction of the sub-pattern 76A3.

[0114] The coupling capacitance electrode 76C includes sub-patterns 76C1 to 76C6. The sub-pattern 76C1 is connected to the via electrode portion 20B. The longitudinal direction of the sub-pattern 76C2 is the X direction. One end of the sub-pattern 76C2 is connected to the sub-pattern 76C1. The sub-pattern 76C2 protrudes in the -X direction. One end of the sub-pattern 76C3 is connected to the other end of the sub-pattern 76C2. The longitudinal direction of the sub-pattern 76C3 is the Y direction. The sub-pattern 76C3 protrudes in the -Y direction. The sub-pattern 76C3 protrudes along the longitudinal direction of the sub-pattern 76A3. One end of the sub-pattern 76C4 is connected to the sub-pattern 76C1. The longitudinal direction of the sub-pattern 76C4 is the Y direction. The sub-pattern 76C4 protrudes in the -Y direction. The sub-pattern 76C4 protrudes along the longitudinal direction of the sub-pattern 76A3. The longitudinal direction of the sub-pattern 76C5 is the X direction. One end of the sub-pattern 76C5 is connected to the sub-pattern 76C1. The sub-pattern 76C5 protrudes in the +X direction. One end of the sub-pattern 76C6 is connected to the other end of the sub-pattern 76C5. The longitudinal direction of the sub-pattern 76C6 is the Y direction. The sub-pattern 76C6 protrudes in the +Y direction. That is, the sub-pattern 76C6 protrudes toward the side surface 14f. The sub-pattern 76C6 protrudes along the longitudinal direction of the sub-pattern 76A3.

[0115] The coupling capacitance electrode 76D includes sub-patterns 76D1 to 76D6. The sub-pattern 76D1 is connected to the via electrode portion 20D. The longitudinal direction of the sub-pattern 76D2 is the X direction. One end of the sub-pattern 76D2 is connected to the sub-pattern 76D1. The sub-pattern 76D2 protrudes in the +X direction. One end of the sub-pattern 76D3 is connected to the other end of the sub-pattern 76D2. The longitudinal direction of the sub-pattern 76D3 is the Y direction. The sub-pattern 76D3 protrudes in the +Y direction. The sub-pattern 76D3 protrudes along the longitudinal direction of the sub-pattern 76A3. One end of the sub-pattern 76D4 is connected to the sub-pattern 76D1. The longitudinal direction of the sub-pattern 76D4 is the Y direction. The sub-pattern 76D4 protrudes in the +Y direction. The sub-pattern 76D4 protrudes along the longitudinal direction of the sub-pattern 76A3. The longitudinal direction of the sub-pattern 76D5 is the X direction. One end of the sub-pattern 76D5 is connected to the sub-pattern 76D1. The sub-pattern 76D5 protrudes in the -X direction. One end of the sub-pattern 76D6 is connected to the other end of the sub-pattern 76D5. The longitudinal direction of the sub-pattern 76D6 is the Y direction. The sub-pattern 76D6 protrudes in the -Y direction. That is, the sub-pattern 76D6 protrudes toward the side surface 14e.

[0116] The sub-pattern 76A3 and the sub-pattern 76D6 are adjacent to each other. Since the sub-pattern 76A3 and the sub-pattern 76D6 are adjacent to each other, the coupling capacitance electrode 76A and the coupling capacitance electrode 76D are capacitively coupled. The coupling capacitance electrode 76A and the coupling capacitance electrode 76D constitute a capacitive coupling structure 77A.

[0117] The positions of the partial pattern 76A2 in the Y direction and the partial pattern 76D5 in the Y direction are equivalent. Both the partial pattern 76A3 and the partial pattern 76D6 protrude in the -Y direction. That is, both the partial pattern 76A3 and the partial pattern 76D6 protrude toward the side surface 14e. The positions of the partial patterns 76A3 and 76D6 in the Y direction are between the positions of the partial patterns 76A2 and 76D5 in the Y direction and the position of the shielding conductor 12Ca in the Y direction.

[0118] The reason for protruding both the partial pattern 76A3 and the partial pattern 76D6 toward the side surface 14e is as follows. That is, the reason for protruding both the partial pattern 76A3 and the partial pattern 76D6 in the -Y direction is as follows. If both the partial pattern 76A3 and the partial pattern 76D6 are protruded in the +Y direction, the partial patterns 76A3 and 76D6 are close to the partial patterns 76C3, 76C4, etc. When the partial patterns 76A3, 76D6 and the partial patterns 76C3, 76C4, etc. are close to each other, the partial patterns 76A3, 76D6 and the partial patterns 76C3, 76C4, etc. are capacitively coupled to each other. It is not preferable for the partial patterns 76A3, 76D6 and the partial patterns 76C3, 76C4, etc. to be capacitively coupled to each other. On the other hand, when both the partial pattern 76A3 and the partial pattern 76D6 are protruded in the -Y direction, these partial patterns 76A3 and 76D6 are not close to the partial patterns 76C3, 76C4, etc. Since the partial patterns 76A3, 76D6 and the partial patterns 76C3, 76C4, etc. are not close to each other, the partial patterns 76A3, 76D6 and the partial patterns 76C3, 76C4 are not capacitively coupled to each other. For such reasons, in the present embodiment, both the partial pattern 76A3 and the partial pattern 76D6 are protruded toward the side surface 14e.

[0119] The partial pattern 76B3 and the partial pattern 76C6 are adjacent to each other. Since the partial pattern 76B3 and the partial pattern 76C6 are adjacent to each other, the coupling capacitance electrode 76B and the coupling capacitance electrode 76C are capacitively coupled. The coupling capacitance electrode 76B and the coupling capacitance electrode 76C constitute a capacitive coupling structure 77B.

[0120] The positions of the partial pattern 76B2 in the Y direction and the partial pattern 76C5 in the Y direction are equivalent. Both the partial pattern 76B3 and the partial pattern 76C6 protrude in the +Y direction. That is, the partial pattern 76B3 and the partial pattern 76C6 protrude toward the side surface 14f. The positions of the partial patterns 76B3 and 76C6 in the Y direction are between the positions of the partial patterns 76B2 and 76C5 in the Y direction and the position of the shielding conductor 12Cb in the Y direction.

[0121] The reason why both the partial pattern 76B3 and the partial pattern 76C6 protrude toward the side surface 14f is as follows. That is, the reason why both the partial pattern 76B3 and the partial pattern 76C6 protrude in the +Y direction is as follows. When both the partial pattern 76B3 and the partial pattern 76C6 protrude in the -Y direction, these partial patterns 76B3 and 76C6 are close to the partial patterns 76D3, 76D4, etc. When the partial patterns 76B3, 76C6 and the partial patterns 76D3, 76D4, etc. are close to each other, the partial patterns 76B3, 76C6 and the partial patterns 76D3, 76D4, etc. are capacitively coupled to each other. It is not preferable that the partial patterns 76B3, 76C6 and the partial patterns 76D3, 76D4, etc. are capacitively coupled to each other. On the other hand, when both the partial pattern 76B3 and the partial pattern 76C6 protrude in the +Y direction, these partial patterns 76B3 and 76C6 are not close to the partial patterns 76D3, 76D4, etc. Since the partial patterns 76B3, 76C6 and the partial patterns 76D3, 76D4, etc. are not close to each other, the partial patterns 76B3, 76C6 and the partial patterns 76D3, 76D4 are not capacitively coupled to each other. For such reasons, in the present embodiment, both the partial pattern 76B3 and the partial pattern 76C6 protrude toward the side surface 14f.

[0122] The partial pattern 76A4 and the partial pattern 76C3 are adjacent to each other. Since the partial pattern 76A4 and the partial pattern 76C3 are adjacent to each other, the coupling capacitance electrode 76A and the coupling capacitance electrode 76C are capacitively coupled. The coupling capacitance electrode 76A and the coupling capacitance electrode 76C constitute a capacitive coupling structure 77C.

[0123] The partial pattern 76B4 and the partial pattern 76D3 are adjacent to each other. Since the partial pattern 76B4 and the partial pattern 76D3 are adjacent to each other, the coupling capacitance electrode 76B and the coupling capacitance electrode 76D are capacitively coupled. The coupling capacitance electrode 76B and the coupling capacitance electrode 76D constitute a capacitive coupling structure 77D.

[0124] The partial pattern 76C4 and the partial pattern 76D4 are adjacent to each other. Since the partial pattern 76C4 and the partial pattern 76D4 are adjacent to each other, the coupling capacitance electrodes 76C and 76D are capacitively coupled. The coupling capacitance electrodes 76C and 76D constitute a capacitive coupling structure 77E.

[0125] As shown in FIG. 26, coupling capacitance electrodes (comb electrodes, capacitance electrodes) 78A to 78C are further formed in the dielectric substrate 14. The coupling capacitance electrodes 78A to 78C are formed in the same layer. In other words, the coupling capacitance electrodes 78A to 78C are formed on the same ceramic sheet (not shown). When explaining without distinguishing the individual coupling capacitance electrodes, the reference numeral 78 is used, and when explaining while distinguishing the individual coupling capacitance electrodes, the reference numerals 78A to 78C are used. There are one or more ceramic sheets (not shown) between the coupling capacitance electrode 76 and the coupling capacitance electrode 78.

[0126] The coupling capacitance electrodes 78 are arranged at point-symmetrical positions with the center C (see FIG. 19) of the dielectric substrate 14 in plan view as the center of symmetry. That is, the coupling capacitance electrode 78A and the coupling capacitance electrode 78B are arranged at point-symmetrical positions with the center C of the dielectric substrate 14 in plan view as the center of symmetry. Also, the coupling capacitance electrode 78C is also formed point-symmetrically with the center C of the dielectric substrate 14 in plan view as the center of symmetry. In the present embodiment, the coupling capacitance electrodes 78 are arranged point-symmetrically in order to obtain good frequency characteristics.

[0127] As shown in FIG. 27, the coupling capacitance electrode 78A includes partial patterns 78A1 and 78A2. The partial pattern 78A1 is connected to the via electrode portion 20A. The longitudinal direction of the partial pattern 78A2 is the Y direction.

[0128] The coupling capacitance electrode 78B includes partial patterns 78B1 and 78B2. The partial pattern 78B1 is connected to the via electrode portion 20E. The longitudinal direction of the partial pattern 78B2 is the Y direction.

[0129] The coupling capacitance electrode 78C includes sub-patterns 78C1 to 78C3. The longitudinal direction of the sub-pattern 78C1 is the Y direction. The sub-pattern 78C1 is adjacent to the sub-pattern 78A2. The longitudinal direction of the sub-pattern 78C2 is the Y direction. The sub-pattern 78C2 is adjacent to the sub-pattern 78B2. One end of the sub-pattern (relay pattern) 78C3 is connected to the sub-pattern 78C1. The other end of the sub-pattern 78C3 is connected to the sub-pattern 78C2. Since the sub-pattern 78A2 and the sub-pattern 78C1 are adjacent to each other, the coupling capacitance electrode 78A and the coupling capacitance electrode 78C are capacitively coupled. Since the sub-pattern 78B2 and the sub-pattern 78C2 are adjacent to each other, the coupling capacitance electrode 78B and the coupling capacitance electrode 78C are capacitively coupled.

[0130] As shown in FIG. 26, input / output patterns 80A and 80B are further formed in the dielectric substrate 14. The input / output patterns 80A and 80B are formed in the same layer. In other words, the input / output patterns 80A and 80B are formed on the same unillustrated ceramic sheet. When explaining without distinguishing the individual input / output patterns, the reference numeral 80 is used, and when explaining by distinguishing the individual input / output patterns, the reference numerals 80A and 80B are used. There is one or more unillustrated ceramic sheets between the coupling capacitance electrode 78 and the input / output pattern 80.

[0131] As shown in FIG. 27, the input / output pattern 80A includes sub-patterns 80A1 and 80A2. One end of the sub-pattern 80A1 is connected to the input / output terminal 22A. The other end of the sub-pattern 80A1 is connected to the sub-pattern 80A2. The sub-pattern 80A2 is connected to the via electrode portion 20A. In this way, the input / output terminal 22A is connected to the via electrode portion 20A via the input / output pattern 80A.

[0132] The input / output pattern 80B includes sub-patterns 80B1 and 80B2. One end of the sub-pattern 80B1 is connected to the input / output terminal 22B. The other end of the sub-pattern 80B1 is connected to the sub-pattern 80B2. The sub-pattern 80B2 is connected to the via electrode portion 20E. In this way, the input / output terminal 22B is connected to the via electrode portion 20E via the input / output pattern 80B.

[0133] In this way, the input / output terminal 22A is electrically connected to the via electrode portion 20A via the input / output pattern 80A, and the input / output terminal 22B is electrically connected to the via electrode portion 20E via the input / output pattern 80B. In this embodiment, the external Q can be appropriately adjusted by appropriately setting the positions of the input / output patterns 80A and 80B in the Z direction. That is, in this embodiment, the external Q can be appropriately adjusted by appropriately setting the positions of the input / output patterns 80A and 80B in the longitudinal direction of the via electrode portions 20A and 20E.

[0134] As shown in FIG. 26, shield via electrode portions 81A to 81D are formed in the dielectric substrate 14. When explaining without distinguishing the individual shield via electrode portions, the reference numeral 81 is used, and when explaining by distinguishing the individual shield via electrode portions, the reference numerals 81A to 81D are used.

[0135] The shield via electrode portion 81A is provided with a shield via electrode 82A and a shield via electrode 82B. The shield via electrode portion 81B is provided with a shield via electrode 82C and a shield via electrode 82D. The shield via electrode portion 81C is provided with a shield via electrode 82E and a shield via electrode 82F. The shield via electrode portion 81D is provided with a shield via electrode 82G and a shield via electrode 82H. When explaining without distinguishing the individual shield via electrodes, the reference numeral 82 is used, and when explaining by distinguishing the individual shield via electrodes, the reference numerals 82A to 82H are used. In the example shown in FIG. 28, one shield via electrode portion 81 is provided with two shield via electrodes 82, but one shield via electrode portion 81 may be constituted by one shield via electrode 82.

[0136] One end of the shielding via electrode portion 81 is connected to the shielding conductor 12A. The other end of the shielding via electrode portion 81 is connected to the shielding conductor 12B.

[0137] As shown in FIG. 28, the shielding via electrode portion 81A is connected to the shielding conductors 12A and 12B within an extended region 84A that extends the region where the via electrode portion 20A is located in the -Y direction. That is, the shielding via electrode portion 81A is connected to the shielding conductors 12A and 12B within an extended region 84A that extends the region where the via electrode portion 20A is located toward the shielding conductor 12Ca. In this way, the shielding via electrode portion 81A is selectively formed within the extended region 84A. The shielding via electrode portion 81A is located in the vicinity of the shielding conductor 12Ca. Note that the region where the via electrode portion 20 is located is a region corresponding to the virtual ring 26.

[0138] The shielding via electrode portion 81B is connected to the shielding conductors 12A and 12B within an extended region 84E that extends the region where the via electrode portion 20E is located in the +Y direction. That is, the shielding via electrode portion 81B is connected to the shielding conductors 12A and 12B within an extended region 84E that extends the region where the via electrode portion 20E is located toward the shielding conductor 12Cb. The shielding via electrode portion 81B is selectively formed within the extended region 84E. The shielding via electrode portion 81B is located in the vicinity of the shielding conductor 12Cb.

[0139] The shielding via electrode portion 81C is connected to the shielding conductors 12A and 12B within an extended region 84B that extends the region where the via electrode portion 20B is located in the +Y direction. That is, the shielding via electrode portion 81C is connected to the shielding conductors 12A and 12B within an extended region 84B that extends the region where the via electrode portion 20B is located toward the shielding conductor 12Cb. The shielding via electrode portion 81C is selectively formed within the extended region 84B. The shielding via electrode portion 81C is located in the vicinity of the shielding conductor 12Cb.

[0140] The shielding via electrode portion 81D is connected to the shielding conductors 12A and 12B within an extended region 84D that extends the region where the via electrode portion 20D is located in the -Y direction. That is, the shielding via electrode portion 81D is connected to the shielding conductors 12A and 12B within an extended region 84D that extends the region where the via electrode portion 20D is located toward the shielding conductor 12Ca. The shielding via electrode portion 81D is selectively formed within the extended region 84D. The shielding via electrode portion 81D is located in the vicinity of the shielding conductor 12Ca. When explaining without distinguishing individual extended regions, the reference numeral 84 is used, and when explaining while distinguishing individual extended regions, the reference numerals 84A to 84D are used.

[0141] In the present embodiment, the shielding via electrode portion 81 is formed for the following reasons. That is, when misalignment occurs during cutting of the dielectric substrate 14, the distance between the via electrode portion 20 and the side surfaces 14e and 14f varies. When the distance between the via electrode portion 20 and the side surfaces 14e and 14f varies, the distance between the via electrode portion 20 and the shielding conductors 12Ca and 12Cb varies. Variation in the distance between the via electrode portion 20 and the shielding conductors 12Ca and 12Cb causes variations in filter characteristics and the like. On the other hand, since the shielding via electrode portion 81 is not formed on the side surfaces 14e and 14f, it is not affected by misalignment during cutting of the dielectric substrate 14. That is, even when misalignment occurs during cutting of the dielectric substrate 14, the distance between the shielding via electrode portion 81 and the via electrode portion 20 does not vary. For such reasons, the shielding via electrode portion 81 is formed in the present embodiment.

[0142] In this embodiment, the shielding via electrode portion 81 is selectively formed in the extension region 84 for the following reasons. That is, the shielding via electrode portion 81 can be formed by irradiating the dielectric substrate 14 with a laser beam to form a via hole and embedding a conductor in the via hole. That is, forming the shielding via electrode portion 81 requires a certain amount of man-hours. Therefore, when a large number of shielding via electrode portions 81 are simply arranged along the side surfaces 14e and 14f, good productivity cannot be obtained. On the other hand, even if only the shielding via electrode portion 81 is arranged in the extension region 84, variations in filter characteristics and the like due to misalignment during cutting of the dielectric substrate 14 can be suppressed. For such reasons, in this embodiment, the shielding via electrode portion 81 is selectively formed in the extension region 84.

[0143] As described above, in this embodiment, the number of resonators 11 provided in the filter 10 is four. According to this embodiment, since the number of resonators 11 is relatively small, it is possible to suppress the coupling degree between the resonators 11, and thus a filter 10 having desired characteristics can be obtained.

[0144] [Modified Embodiment] The present invention is not limited to the above-described embodiments, and various configurations can be adopted without departing from the gist of the present invention.

[0145] For example, the first embodiment and the second embodiment may be appropriately combined.

[0146] Also, in the first embodiment, the case where the number of resonators 11 is five was described as an example, and in the second embodiment, the case where the number of resonators 11 is four was described as an example, but the present invention is not limited thereto. For example, the number of resonators 11 may be six.

[0147] Further, the filter 10 according to the first embodiment may be provided with shielding via electrode portions 81A to 81D, 81Ea, and 81Eb. FIG. 29 is a plan view showing an example of a filter according to a modified embodiment. As shown in FIG. 29, shielding via electrode portions 81A to 81D, 81Ea, and 81Eb are formed in the dielectric substrate 14. Since the shielding via electrode portions 81A to 81D are the same as the above-described shielding via electrode portions 81A to 81D provided in the filter 10 according to the second embodiment, the description thereof will be omitted. The shielding via electrode portion 81Ea is provided with a shielding via electrode 82I and a shielding via electrode 82J. The shielding via electrode portion 81Eb is provided with a shielding via electrode 82K and a shielding via electrode 82L. When describing without distinguishing the individual shielding via electrode portions, the reference numeral 81 is used, and when describing by distinguishing the individual shielding via electrode portions, the reference numerals 81A to 81D, 81Ea, and 81Eb are used. One end of the shielding via electrode portion 81 is connected to the shielding conductor 12A. The other end of the shielding via electrode portion 81 is connected to the shielding conductor 12B.

[0148] As shown in FIG. 29, the shielding via electrode portion 81Ea is connected to the shielding conductors 12A and 12B in an extended region 84Ca obtained by extending the region where the via electrode portion 20C is located in the -Y direction. That is, the shielding via electrode portion 81Ea is connected to the shielding conductors 12A and 12B in an extended region 84Ca obtained by extending the region where the via electrode portion 20C is located toward the shielding conductor 12Ca. In this way, the shielding via electrode portion 81Ea is selectively formed in the extended region 84Ca. The shielding via electrode portion 81Ea is located in the vicinity of the shielding conductor 12Ca.

[0149] The shielding via electrode portion 81Eb is connected to the shielding conductors 12A and 12B in an extended region 84Cb obtained by extending the region where the via electrode portion 20C is located in the +Y direction. That is, the shielding via electrode portion 81Eb is connected to the shielding conductors 12A and 12B in an extended region 84Cb obtained by extending the region where the via electrode portion 20C is located toward the shielding conductor 12Cb. In this way, the shielding via electrode portion 81Eb is selectively formed in the extended region 84Cb. The shielding via electrode portion 81Eb is located in the vicinity of the shielding conductor 12Cb.

[0150] FIG. 30 is a plan view showing an example of a filter according to a modified embodiment. In the example shown in FIG. 30, one shielding via electrode portion 81 is constituted by one shielding via electrode 82. The shielding via electrode portion 81A is constituted by the shielding via electrode 82A. The shielding via electrode portion 81B is constituted by the shielding via electrode 82C. The shielding via electrode portion 81C is constituted by the shielding via electrode 82E. The shielding via electrode portion 81D is constituted by the shielding via electrode 82G. The shielding via electrode portion 81Ea is constituted by the shielding via electrode 82I. The shielding via electrode portion 81Eb is constituted by the shielding via electrode 82K. Thus, one shielding via electrode portion 81 may be constituted by one shielding via electrode 82.

[0151] FIG. 31 is a plan view showing an example of a filter according to a modified embodiment. In the example shown in FIG. 31, the shielding via electrode portion 81Ea is located at a position intermediate between the via electrode portion 20C and the shielding conductor 12Ca. In the example shown in FIG. 31, the shielding via electrode portion 81Ea is not located in the vicinity of the shielding conductor 12Ca. The distance in the Y direction between the shielding via electrode portion 81Ea and the shielding conductor 12Ca is larger than the distance in the Y direction between the shielding via electrode portions 81A, 81D and the shielding conductor 12Ca. In the example shown in FIG. 31, the shielding via electrode portion 81Eb is located at a position intermediate between the via electrode portion 20C and the shielding conductor 12Cb. That is, in the example shown in FIG. 31, the shielding via electrode portion 81Eb is not located in the vicinity of the shielding conductor 12Cb. The distance in the Y direction between the shielding via electrode portion 81Eb and the shielding conductor 12Cb is larger than the distance in the Y direction between the shielding via electrode portions 81B, 81C and the shielding conductor 12Cb. Thus, the shielding via electrode portion 81Ea may be located at a position intermediate between the via electrode portion 20C and the shielding conductor 12Ca. Also, the shielding via electrode portion 81Eb may be located at a position intermediate between the via electrode portion 20C and the shielding conductor 12Cb.

[0152] In the first embodiment, the case where the input / output terminals 22A and 22B are connected to the shielding conductor 12B via the connection lines 32a and 32b has been described as an example, but the present invention is not limited to this. For example, the input / output terminals 22A and 22B may be connected to the via electrode portions 20A and 20E via the input / output patterns 80A and 80B (see FIG. 19).

[0153] In the second embodiment, the case where the input / output terminals 22A and 22B are connected to the via electrode portions 20A and 20E via the input / output patterns 80A and 80B has been described as an example, but the present invention is not limited to this. For example, the input / output terminals 22A and 22B may be connected to the shielding conductor 12B via the connection lines 32a and 32b (see FIG. 2).

[0154] In the modified embodiment described above with reference to FIGS. 29 to 31, the case where the input / output terminals 22A and 22B are connected to the shielding conductor 12B via the connection lines 32a and 32b has been described as an example, but the present invention is not limited to this. For example, the input / output terminals 22A and 22B may be connected to the via electrode portions 20A and 20E via the input / output patterns 80A and 80B (see FIG. 19).

[0155] The invention that can be understood from the above embodiments will be described below.

[0156] The filter (10) includes a dielectric substrate (14), a plurality of resonators (11A to 11E) formed in the dielectric substrate and surrounded by shielding conductors (12A, 12B, 12Ca, 12Cb), and a first input / output terminal (22A) and a second input / output terminal (22B) formed in a portion where the shielding conductor is not formed. A first resonator (11A), which is the resonator among the plurality of resonators closest to the first input / output terminal, and a second resonator (11E), which is the resonator among the plurality of resonators closest to the second input / output terminal, are in a point-symmetrical positional relationship with the center (C) of the dielectric substrate in a plan view as the center of symmetry. A third resonator (11B) among the plurality of resonators and a fourth resonator (11D) among the plurality of resonators are in a point-symmetrical positional relationship with the center of the dielectric substrate in a plan view as the center of symmetry. The position of the third resonator in a first direction, which is the longitudinal direction of the dielectric substrate, is between the position of the first resonator in the first direction and the position of the center of the dielectric substrate in the first direction. The position of the fourth resonator in the first direction is between the position of the second resonator in the first direction and the position of the center of the dielectric substrate in the first direction. According to such a configuration, since the resonators are arranged point-symmetrically, a filter with good characteristics can be provided.

[0157] In the above filter, it may further include a capacitive coupling structure (54) provided between the resonators. The capacitive coupling structure includes a first electrode (50A) extending from one of the resonators, a second electrode (50B) extending from the other resonator toward the first electrode and having a tip end spaced apart from the first electrode in a side view, and a third electrode (50C) having one end overlapping the first electrode in a plan view and the other end overlapping the second electrode in a plan view.

[0158] In the above filter, the capacitive coupling structure includes a fourth electrode (50Ab) that extends from one of the resonators and overlaps with the first electrode (50Aa) in a plan view, and a fifth electrode (50Bb) that extends from the other resonator toward the fourth electrode, overlaps with the second electrode (50Ba) in a plan view, and has a tip end spaced apart from the fourth electrode. One end (50Ca) of the third electrode may be located between the first electrode and the fourth electrode in a side view, and the other end (50Cb) of the third electrode may be located between the second electrode and the fifth electrode in a side view.

[0159] In the above filter, one end of the third electrode may overlap with at least one corner of the first electrode in a plan view, and the other end of the third electrode may overlap with at least one corner of the second electrode in a plan view.

[0160] The above filter may further include a first electrode (50A) extending from one of the resonators, a second electrode (50B) extending from the other resonator toward the first electrode and having a tip end overlapping with the first electrode in a plan view, a third electrode (50C) extending from one of the resonators, and a fourth electrode (50D) extending from the other resonator toward the third electrode and having a tip end overlapping with the third electrode in a plan view.

[0161] In the above filter, the first electrode may overlap with at least one corner of the second electrode in a plan view, and the fourth electrode may overlap with at least one corner of the third electrode in a plan view.

[0162] The above filter may include capacitive coupling structures (61A to 61F) provided between a plurality of the resonators. The capacitive coupling structure includes a capacitive electrode (60ac, 60ab) extending from one of the resonators and a capacitive electrode (60ca, 60ba) extending from the other resonator. A part of the capacitive electrode extending from one of the resonators and a part of the capacitive electrode extending from the other resonator may be close to each other.

[0163] In the above filter, the distance (g2) between the capacitive electrodes (60ac, 60ca) in the first capacitive coupling structure (61A) among the plurality of capacitive coupling structures may be greater than the distance (g1) between the capacitive electrodes (60ab, 60ba) in the second capacitive coupling structure (61C) among the plurality of capacitive coupling structures.

[0164] In the above filter, the dielectric substrate includes two main surfaces (14a, 14b) and four side surfaces (14c to 14f), and the distance between the first side surface (14e) among the four side surfaces and the first resonator is smaller than the distance between the first side surface and the third resonator. The filter may further include a first capacitive coupling structure (77A) including a first electrode pattern (76A3) connected to the first resonator and protruding toward the first side surface, and a second electrode pattern (76D6) connected to the fourth resonator and protruding toward the first side surface.

[0165] In the above filter, the filter further includes a second capacitive coupling structure (77C) including a third electrode pattern (76A4) connected to the first resonator and a fourth electrode pattern (76C3) connected to the third resonator, and a third capacitive coupling structure (77E) including a fifth electrode pattern (76C4) connected to the third resonator and a sixth electrode pattern (76D4) connected to the fourth resonator. The first electrode pattern, the second electrode pattern, the third electrode pattern, the fourth electrode pattern, the fifth electrode pattern, and the sixth electrode pattern are formed in the same layer, and the third electrode pattern, the fourth electrode pattern, the fifth electrode pattern, and the sixth electrode pattern may protrude along the longitudinal direction of the first electrode pattern.

[0166] In the above filter, the plurality of resonators are each provided with via electrode portions (20A, 20B, 20D, 20E), a first electrode pattern (70A3) connected to any one of the plurality of via electrode portions, a second electrode pattern (70C2) connected to any one of the plurality of via electrode portions, and a capacitive coupling structure (71A) including a coupling capacitance electrode (72A) having one end overlapping the first electrode pattern in a plan view and the other end overlapping the second electrode pattern in a plan view. A dimension (W12) of the coupling capacitance electrode in the width direction of the coupling capacitance electrode is smaller than a dimension (W11) of the first electrode pattern in the width direction of the coupling capacitance electrode. On both sides of a first region (73A1) where the coupling capacitance electrode and the first electrode pattern overlap, there are second regions (73A2, 73A3) where the coupling capacitance electrode does not overlap the first electrode pattern. A dimension difference (W11 - W12), which is a value obtained by subtracting the dimension of the coupling capacitance electrode in the width direction of the coupling capacitance electrode from the dimension of the first electrode pattern in the width direction of the coupling capacitance electrode, may be 1.4 times or more the inter-electrode distance (d1), which is the distance between the coupling capacitance electrode and the first electrode pattern in the thickness direction of the coupling capacitance electrode.

[0167] In the above filter, the dimension difference may be 2.6 times or more the inter-electrode distance.

[0168] In the above filter, a first shielding conductor (12A) among the plurality of shielding conductors is formed on one main surface side of the dielectric substrate, a second shielding conductor (12B) among the plurality of shielding conductors is formed on the other main surface side of the dielectric substrate, a third shielding conductor (12Ca) among the plurality of shielding conductors is formed on a first side surface of the dielectric substrate, a fourth shielding conductor (12Cb) among the plurality of shielding conductors is formed on a second side surface facing the first side surface, each of the plurality of resonators includes via electrode portions (20A to 20E) formed in the dielectric substrate and capacitor electrodes (18A to 18E) facing the first shielding conductor and connected to one end of the via electrode portions, and further includes shielding via electrode portions (81A to 81D, 81Ea, 81Eb) having one end connected to the first shielding conductor and the other end connected to the second shielding conductor, and the shielding via electrode portions may be selectively formed in extension regions (84A, 84B, 84Ca, 84Cb, 84D, 84E) obtained by extending a region where the via electrode portions are formed toward the third shielding conductor or the fourth shielding conductor.

Claims

1. A dielectric substrate (14); A plurality of resonators (11A to 11E) formed in the dielectric substrate and surrounded by shielding conductors (12A, 12B, 12Ca, 12Cb); A first input / output terminal (22A) and a second input / output terminal (22B) formed in a portion where the shielding conductor is not formed, and having: A first resonator (11A) that is the resonator closest to the first input / output terminal among the plurality of resonators, and a second resonator (11E) that is the resonator closest to the second input / output terminal among the plurality of resonators are in a point-symmetrical positional relationship with the center (C) of the dielectric substrate in a plan view as the center of symmetry; A third resonator (11B) among the plurality of resonators and a fourth resonator (11D) among the plurality of resonators are in a point-symmetrical positional relationship with the center of the dielectric substrate in a plan view as the center of symmetry; The position of the third resonator in a first direction that is the longitudinal direction of the dielectric substrate is between the position of the first resonator in the first direction and the position of the center of the dielectric substrate in the first direction; The position of the fourth resonator in the first direction is between the position of the second resonator in the first direction and the position of the center of the dielectric substrate in the first direction; Having capacitive coupling structures (61A to 61F) respectively provided between the plurality of resonators; The capacitive coupling structure has a capacitive electrode (60ac, 60ab) extending from one of the resonators and a capacitive electrode (60ca, 60ba) extending from the other resonator; A part of the capacitive electrode extending from one resonator and a part of the capacitive electrode extending from the other resonator are close to each other; A filter in which a distance (g2) between the capacitive electrodes (60ac, 60ca) in a first capacitive coupling structure (61A) among the plurality of capacitive coupling structures is larger than a distance (g1) between the capacitive electrodes (60ab, 60ba) in a second capacitive coupling structure (61C) among the plurality of capacitive coupling structures.

2. A dielectric substrate (14); A plurality of resonators (11A to 11E) formed in the dielectric substrate and surrounded by shielding conductors (12A, 12B, 12Ca, 12Cb); A first input / output terminal (22A) and a second input / output terminal (22B) formed in a portion where the shielding conductor is not formed, and having: A first resonator (11A), which is the resonator among the plurality of resonators closest to the first input / output terminal, and a second resonator (11E), which is the resonator among the plurality of resonators closest to the second input / output terminal, have a point-symmetrical positional relationship with the center (C) of the dielectric substrate in a plan view as the center of symmetry. A third resonator (11B) among the plurality of resonators and a fourth resonator (11D) among the plurality of resonators have a point-symmetrical positional relationship with the center of the dielectric substrate in a plan view as the center of symmetry. The position of the third resonator in the first direction, which is the longitudinal direction of the dielectric substrate, is between the position of the first resonator in the first direction and the position of the center of the dielectric substrate in the first direction. The position of the fourth resonator in the first direction is between the position of the second resonator in the first direction and the position of the center of the dielectric substrate in the first direction. The dielectric substrate includes two main surfaces (14a, 14b) and four side surfaces (14c to 14f). The distance between the first side surface (14e) among the four side surfaces and the first resonator is smaller than the distance between the first side surface and the third resonator. A filter further comprising a first capacitive coupling structure (77A) including a first electrode pattern (76A3) connected to the first resonator and protruding toward the first side surface, and a second electrode pattern (76D6) connected to the fourth resonator and protruding toward the first side surface.

3. In the filter according to claim 2, A second capacitive coupling structure (77C) including a third electrode pattern (76A4) connected to the first resonator and a fourth electrode pattern (76C3) connected to the third resonator; A third capacitive coupling structure (77E) including a fifth electrode pattern (76C4) connected to the third resonator and a sixth electrode pattern (76D4) connected to the fourth resonator; The first electrode pattern, the second electrode pattern, the third electrode pattern, the fourth electrode pattern, the fifth electrode pattern, and the sixth electrode pattern are formed in the same layer. The third electrode pattern, the fourth electrode pattern, the fifth electrode pattern, and the sixth electrode pattern protrude along the longitudinal direction of the first electrode pattern. A filter.

4. A dielectric substrate (14), A plurality of resonators (11A to 11E) formed within the dielectric substrate and surrounded by shielding conductors (12A, 12B, 12Ca, 12Cb); A first input / output terminal (22A) and a second input / output terminal (22B) formed at a portion where the shielding conductor is not formed; and having, A first resonator (11A), which is the resonator closest to the first input / output terminal among the plurality of resonators, and a second resonator (11E), which is the resonator closest to the second input / output terminal among the plurality of resonators, are in a point-symmetrical positional relationship with the center (C) of the dielectric substrate in a plan view as the center of symmetry, A third resonator (11B) among the plurality of resonators and a fourth resonator (11D) among the plurality of resonators are in a point-symmetrical positional relationship with the center of the dielectric substrate in a plan view as the center of symmetry, The position of the third resonator in a first direction, which is the longitudinal direction of the dielectric substrate, is between the position of the first resonator in the first direction and the position of the center of the dielectric substrate in the first direction, The position of the fourth resonator in the first direction is between the position of the second resonator in the first direction and the position of the center of the dielectric substrate in the first direction, The plurality of resonators are each provided with via electrode portions (20A, 20B, 20D, 20E), A first electrode pattern (70A3) connected to any one of the plurality of via electrode portions, a second electrode pattern (70C2) connected to any one of the plurality of via electrode portions, and a coupling capacitance electrode (72A) having one end overlapping the first electrode pattern in a plan view and the other end overlapping the second electrode pattern in a plan view, and a capacitance coupling structure (71A) including the same, Comprising, The dimension (W12) of the coupling capacitance electrode in the width direction of the coupling capacitance electrode is smaller than the dimension (W11) of the first electrode pattern in the width direction of the coupling capacitance electrode, On both sides of a first region (73A1) where the coupling capacitance electrode overlaps the first electrode pattern, there are second regions (73A2, 73A3) where the coupling capacitance electrode does not overlap the first electrode pattern. A filter, wherein a dimensional difference (W11 - W12), which is a value obtained by subtracting the dimension of the first electrode pattern in the width direction of the coupling capacitance electrode from the dimension of the coupling capacitance electrode in the width direction of the coupling capacitance electrode, is 1.4 times or more the electrode distance (d1), which is the distance between the coupling capacitance electrode and the first electrode pattern in the thickness direction of the coupling capacitance electrode. **Claim 5** The filter according to claim 4, wherein the dimensional difference is 2.6 times or more the electrode distance. **Claim 6** A dielectric substrate (14), a plurality of resonators (11A to 11E) formed in the dielectric substrate and surrounded by shielding conductors (12A, 12B, 12Ca, 12Cb), a first input / output terminal (22A) and a second input / output terminal (22B) formed in a portion where the shielding conductor is not formed, a first resonator (11A), which is the resonator closest to the first input / output terminal among the plurality of resonators, and a second resonator (11E), which is the resonator closest to the second input / output terminal among the plurality of resonators, have a point-symmetrical positional relationship with the center (C) of the dielectric substrate in a plan view as the center of symmetry, a third resonator (11B) among the plurality of resonators and a fourth resonator (11D) among the plurality of resonators have a point-symmetrical positional relationship with the center of the dielectric substrate in a plan view as the center of symmetry, the position of the third resonator in a first direction, which is the longitudinal direction of the dielectric substrate, is between the position of the first resonator in the first direction and the position of the center of the dielectric substrate in the first direction, the position of the fourth resonator in the first direction is between the position of the second resonator in the first direction and the position of the center of the dielectric substrate in the first direction, a first shielding conductor (12A) among the plurality of shielding conductors is formed on one main surface side of the dielectric substrate, a second shielding conductor (12B) among the plurality of shielding conductors is formed on the other main surface side of the dielectric substrate, a third shielding conductor (12Ca) among the plurality of shielding conductors is formed on a first side surface of the dielectric substrate, a fourth shielding conductor (12Cb) among the plurality of shielding conductors is formed on a second side surface facing the first side surface. Each of the plurality of resonators includes via electrode portions (20A to 20E) formed in the dielectric substrate, and capacitor electrodes (18A to 18E) facing the first shielding conductor and connected to one end of the via electrode portions. The filter further includes shielding via electrode portions (81A to 81D, 81Ea, 81Eb) having one end connected to the first shielding conductor and the other end connected to the second shielding conductor. The shielding via electrode portions are selectively formed in extension regions (84A, 84B, 84Ca, 84Cb, 84D, 84E) that extend the region where the via electrode portions are formed toward the third shielding conductor or the fourth shielding conductor.

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