Method of manufacturing a semiconductor device

Abstract

To obtain a manufacturing method of a semiconductor device that can form a primary layer on the outer periphery of a wire with high precision.SOLUTION: Application processing of a coating liquid 40 using a nozzle 10 is performed on a coating target structure including a semiconductor element 1 and a wire 9 bonded to the semiconductor element 1 by wire bonding processing. The nozzle 10 has a conveying air generation function that generates a spiral liquid conveying air CW. Therefore, the coating liquid 40 output from a coating liquid supply port 13 of the nozzle 10 is supplied to the coating target structure along the directionality of the liquid conveying air CW. After that, drying processing is performed on the coating target structure. A primary layer 4 made of a silane coupling agent is formed around the outer periphery of the wire 9.SELECTED DRAWING: Figure 3

Description

Technical Field

[0001] The present disclosure relates to a method for manufacturing a semiconductor device, and more particularly to a method for manufacturing a semiconductor device including a semiconductor element and a wire electrically connected to the semiconductor element.

Background Art

[0002] As a method for manufacturing a semiconductor device including a chip-shaped semiconductor element and a wire electrically connected to the semiconductor element, for example, there is a method for manufacturing a semiconductor package disclosed in Patent Document 1.

[0003] In this manufacturing method, in a semiconductor package, the surfaces of a die pad, a semiconductor element, a connection member, and a lead are surface-treated with a silane coupling agent serving as a primary layer. The first surface of the semiconductor element where the connection member is joined on the surface of the semiconductor element includes a first region where an organic substance is exposed and a second region where an inorganic substance is exposed, and the bonding strength between the first region and the encapsulating resin is weaker than the bonding strength between the second region and the encapsulating resin.

[0004] Furthermore, as a semiconductor device using a primary composition, for example, there is an optical semiconductor device disclosed in Patent Document 2. This optical semiconductor device is configured by bonding a substrate on which an optical semiconductor element is mounted and an encapsulating material made of an addition reaction curable silicone composition that encapsulates the optical semiconductor element.

[0005] In this optical semiconductor device, the primer composition for bonding the substrate and the encapsulating material contains an alkoxysilane compound having at least one or more mercapto groups in one molecule, a titanium compound, and a solvent.

Prior Art Documents

Patent Documents

[0006]

Patent Document 1

Patent Document 2

SUMMARY OF THE INVENTION

PROBLEMS TO BE SOLVED BY THE INVENTION

[0007] In the prior art disclosed in Patent Document 1 and Patent Document 2, the application of the coating liquid, which is a constituent material of the primary layer or the primary composition, is performed using a spinner or a sprayer. Therefore, when the coating liquid is applied using a spinner after attaching a semiconductor element or the like to a case, a liquid pool is generated on the inner wall of the case, and a film thickness region where the primary layer is formed with a relatively thick film thickness is generated, and there is a problem that the reaction in the film thickness region becomes insufficient.

[0008] On the other hand, when a pre-application treatment of applying the coating liquid before attaching a semiconductor element or the like to a case is adopted, it affects the adhesion between the case to be attached later and the substrate on which the semiconductor element is mounted and the strength of the wire bonded to the semiconductor element. Therefore, it is not desirable to adopt the pre-application treatment.

[0009] Also, when the droplets of the coating liquid are sprayed from above using a sprayer, it becomes difficult to apply the coating liquid to the back surface of the wire to be bonded. Therefore, in the manufactured semiconductor device, there is a problem that the primary layer is not provided on the back surface of the wire.

[0010] Therefore, when forming a sealing material such as a sealing resin covering the semiconductor element and the wire, the bonding strength between the back surface of the bonded wire and the sealing material becomes weak, and a problem occurs in that the sealing material becomes a starting point for peeling when thermal stress is generated during the use of the semiconductor device.

[0011] Also, when performing the coating treatment by floating the coating liquid in a mist state, it is difficult to uniformly apply the coating liquid over the entire outer circumference of the wire, and there is a risk that the coating liquid will be applied to the region where the application of the coating liquid is prohibited.

[0012] In the conventional method for manufacturing a semiconductor device, which includes a step of covering a semiconductor element or the like with a sealing material after forming a primary layer, there has been a problem that it is substantially impossible to form a primary layer on the outer periphery of a wire bonded to the semiconductor element.

[0013] The present disclosure has been made to solve the above problems, and an object thereof is to obtain a method for manufacturing a semiconductor device capable of accurately forming a primary layer on the outer periphery of a wire.

Means for Solving the Problems

[0014] The method for manufacturing a semiconductor device according to the present disclosure includes: (a) a step of preparing a coating target structure including a semiconductor element and a wire electrically connected to the semiconductor element; (b) a coating process of supplying a coating liquid from the coating liquid supply port toward the coating target structure using a nozzle disposed above the coating target structure and having a coating liquid supply port; and (c) a step of drying the coating target structure after executing the step (b). The coating liquid contains a silane coupling agent, the nozzle has a transport air generation function of generating a spiral liquid transport air flowing from top to bottom, and the coating liquid is supplied to the coating target structure along the flow by the liquid transport air.

Effects of the Invention

[0015] The nozzle used in the method for manufacturing a semiconductor device according to the present disclosure generates a spiral liquid transport air, and supplies the coating liquid to the coating target structure along the flow by this liquid transport air. Therefore, after executing the step (b), the coating liquid can be applied to the outer periphery of the wire including the back surface of the wire.

[0016] As a result, in the method for manufacturing a semiconductor device according to the present disclosure, after executing the step (c), a primary layer made of a silane coupling agent as a constituent material can be accurately formed on the outer periphery of the wire including the back surface of the wire.

Brief Description of the Drawings

[0017]

Figure 1

Figure 2

Figure 3

Figure 4

Figure 5

Figure 6

Figure 7

Figure 8

Figure 9

Figure 10

Embodiments for Carrying Out the Invention

[0018] <Embodiment 1> (Semiconductor Device) FIG. 1 is a cross-sectional view showing the configuration of a semiconductor device 51 manufactured by the method for manufacturing a semiconductor device according to Embodiment 1 of the present disclosure. An XYZ orthogonal coordinate system is shown in FIG. 1.

[0019] As shown in the figure, the semiconductor device 51 includes a semiconductor element 1, a bonding material 2, a resin insulating substrate 3, a primary layer 4, a plurality of wires 9, a sealing material 5, and a case 8 as main components. The case 8 houses the semiconductor element 1, the bonding material 2, the resin insulating substrate 3, the primary layer 4, the plurality of wires 9, and the sealing material 5.

[0020] The resin insulating substrate 3 includes circuit patterns 31 and 31b, a resin insulating layer 32, and a base plate 33 as main components. The resin insulating layer 32 is provided on the base plate 33, and the circuit patterns 31 and 31b are selectively provided on the resin insulating layer 32.

[0021] The semiconductor element 1 is provided as a power semiconductor chip via the bonding material 2 on the circuit pattern 31. The case 8 houses the resin insulating substrate 3 in a manner of being fixed to a part of the side surface of the resin insulating substrate 3 and the upper surface of the resin insulating layer 32. Specifically, the resin insulating substrate 3 is fixed in the case 8 in such a way that the lower side surface 81 of the case 8 is in contact with a part of the side surfaces of the base plate 33 and the resin insulating layer 32, and the middle lower surface 82 of the case 8 is in contact with a part of the upper surface of the resin insulating layer 32.

[0022] A signal terminal 7 that functions as an electrode of the semiconductor device 51 is provided on the middle upper surface 84 of the case 8. Two signal terminals 7 are shown in FIG. 1. The signal terminal 7 has a bottom portion and an upward standing portion bent from the bottom portion. The bottom portion is provided on the middle upper surface 84, and the upward standing portion extends upward in the Z direction and is in contact with the upper side surface 85 of the case 8.

[0023] The upper surface of the semiconductor element 1 and the upper surface of the circuit pattern 31b are electrically connected via the wire 9. Further, the upper surface of the circuit pattern 31b and the bottom portion of the signal terminal 7 on the left side in the figure are electrically connected via the wire 9, and the upper surface of the semiconductor element 1 and the bottom portion of the signal terminal 7 on the right side in the figure are electrically connected via the wire 9. Thus, three wires 9 are shown as the plurality of wires 9 in FIG. 1.

[0024] The end of each wire 9 is joined by wire bonding to any one of the upper surface of the semiconductor element 1, the upper surface of the circuit pattern 31b, and the upper surface of the bottom of the left and right signal terminals 7. The three wires 9 shown in FIG. 1 each exhibit an arc shape having a loop height of approximately the same degree.

[0025] Within the coating target region R51, a primary layer 4 is provided on a part of the intermediate upper surface 84 of the case 8, the intermediate side surface 83, the side surface and upper surface of the circuit pattern 31b, and the upper surface of the semiconductor element 1. In addition, a primary layer 4 is provided on the outer periphery of each of the plurality of wires 9 including the back surface of each of the plurality of wires 9 within the coating target region R51. That is, the primary layer 4 is provided on the entire circumference of each wire 9. The primary layer 4 functions as an underlayer for achieving bonding with the sealing material 5, with a silane coupling agent as a constituent material.

[0026] Furthermore, a sealing material 5 is provided so as to cover a part of the circuit patterns 31 and 31b, the semiconductor element 1, the bonding material 2, the primary layer 4, the wire 9, and a part of the signal terminal 7. A part of the upwardly erected portion of the signal terminal 7 is exposed from the sealing material 5, and the exposed region in the upwardly erected portion becomes the external terminal region 7X.

[0027] (Method for manufacturing a semiconductor device) FIG. 2 is a flowchart showing the processing procedure of the method for manufacturing a semiconductor device according to Embodiment 1. Hereinafter, the processing content of the method for manufacturing a semiconductor device according to Embodiment 1 will be described with reference to the same figure.

[0028] First, in step S1, a basic structure of the semiconductor device 51 is assembled. The basic structure means a structure including the resin insulating substrate 3, the bonding material 2, and the semiconductor element 1.

[0029] Hereinafter, the method of assembling the basic structure will be described. First, a resin insulating layer 32 is applied to the copper foil before patterning, and after further attaching a base plate 33 to the resin insulating layer 32, the reaction is advanced by hot pressing and annealing to bond between the copper foil and the resin insulating layer 32 and between the resin insulating layer 32 and the base plate 33.

[0030] Thereafter, the copper foil is etched to form circuit patterns 31 and 31b, thereby completing the resin insulating substrate 3. Further, after mounting the semiconductor element 1 on the resin insulating substrate 3 via the bonding material 2, the semiconductor element 1 and the circuit pattern 31 are bonded by the bonding material 2 through heat treatment. As a result, a basic structure including the resin insulating substrate 3, the bonding material 2, and the semiconductor element 1 is completed.

[0031] Note that before executing step S1, a process of providing bumps for height adjustment in the basic structure may be executed on the semiconductor element 1 or on the circuit pattern 31b.

[0032] After executing step S1, in step S2, the case 8 is attached to the basic structure. Specifically, the case 8 is attached to the basic structure by bonding a part of the upper surface of the resin insulating layer 32 and the intermediate lower surface 82 of the case 8 with an adhesive. Note that the case 8 attached in step S2 has signal terminals 7 on the intermediate upper surface 84.

[0033] Next, in step S3, a wire bonding process is performed to provide a plurality of wires 9 on the basic structure and the signal terminals 7. The plurality of wires 9 electrically connect between the semiconductor element 1 and the signal terminals 7, between the semiconductor element 1 and the circuit pattern 31b, and between the circuit pattern 31b and the signal terminals 7.

[0034] After executing step S3, a coating target structure in which the resin insulating substrate 3, the bonding material 2, the semiconductor element 1, the signal terminals 7, and the wires 9 are housed in the case 8 is completed. Thus, steps S1 to S3 are steps for preparing a coating target structure including the semiconductor element 1 and the wires 9 electrically connected to the semiconductor element 1.

[0035] In the processing procedure of the manufacturing method of the semiconductor device shown in FIG. 2, after executing the case attachment in step S2, the wire bonding process in step S3 is executed. That is, one wire bonding process is executed.

[0036] A modification may be made in which the wire bonding process is divided into first and second wire bonding processes. That is, instead of the processing procedures of steps S2 and S3 shown in FIG. 2, a processing procedure of "after executing the first wire bonding process, performing a case attachment process, and then executing the second wire bonding process" may be adopted as a modification. In the modification, the number of steps of the wire bonding process can be increased.

[0037] Next, in step S4, a coating process is executed on the coating target structure using the nozzle 10.

[0038] FIG. 3 is an explanatory diagram schematically showing the state of the coating process of step S4 using the nozzle 10. FIG. 4 is an explanatory diagram schematically showing the planar structure of the bottom surface of the nozzle 10 viewed from below. FIG. 5 is an explanatory diagram schematically showing the cross-sectional structure in the A-A cross section of the nozzle 10 shown in FIG. 4. An XYZ orthogonal coordinate system is shown in each of FIGS. 3 to 5.

[0039] As shown in FIG. 4, a coating liquid supply port 13 is provided at the center of the bottom surface 101 of the nozzle 10. By outputting the coating liquid 40 downward in the -Z direction from the coating liquid supply port 13, the coating liquid 40 is supplied to the lower coating target structure.

[0040] The coating liquid 40 is an alcohol dilution of a silane coupling agent, and the concentration of the silane coupling agent is set to 1% or less. As the alcohol, for example, ethanol can be considered.

[0041] As shown in FIG. 4, air supply ports 141 to 144 are evenly provided on four sides of the coating liquid supply port 13 in a plan view in the XY plane. Specifically, + the air supply port 141 is provided on the Y-direction side with respect to the coating liquid supply port 13, the air supply port 142 is provided on the +X-direction side with respect to the coating liquid supply port 13, and - the air supply port 143 is provided on the Y-direction side with respect to the coating liquid supply port 13, and the air supply port 144 is provided on the -X-direction side with respect to the coating liquid supply port 13.

[0042] Partial conveyance airflows D1 to D4 are ejected from the air supply ports 141 to 144. The partial conveyance airflows D1 to D4 are each ejected obliquely downward, that is, the partial conveyance airflows D1 to D4 are each airflow having a directivity that inclines horizontally from top to bottom.

[0043] Specifically, the partial conveyance airflow D1 has a directivity that inclines in the +X direction from top to bottom, and the partial conveyance airflow D2 has a directivity that inclines in the - Y direction from top to bottom. The conveyance airflow D3 has a directivity that inclines in the -X direction from top to bottom, and the partial conveyance airflow D4 has a directivity that inclines in the + Y direction from top to bottom.

[0044] As shown in FIG. 5, the air supply port 143 includes an upper supply port 143u above and a lower supply port 143d below. Air for the partial conveyance airflow D3 is supplied to the air supply port 143 from a supply source (not shown). The air supplied from the supply source goes from above to below above the upper supply port 143u, and further, is ejected as the partial conveyance airflow D3 from the bottom surface 101 via the lower supply port 143d.

[0045] The upper supply port 143u is formed along the Z direction. The lower supply port 143d is provided with an inclination in the horizontal direction along the -Z direction. Specifically, the lower supply port 143d is provided with an inclination in the -X direction from top to bottom. Therefore, the partial conveyance airflow D3 finally ejected from the lower supply port 143d has a directivity that inclines in the -X direction from top to bottom, reflecting the shape of the lower supply port 143d.

[0046] Note that the air supply ports 141, 142, and 144 also have the same structure as the air supply port 143, and each ejects the partial conveyance airflows D1, D2, and D4 having the above-described directivities. Also, the supply sources of the partial conveyance airflows D1 to D4 are usually one, and air is supplied from one supply source to each of the air supply ports 141 to 144.

[0047] Thus, since the air supply ports 141 to 144 each have the internal structure described above, the partial conveyance air D1 to D4 having the above-described directivity can be jetted from the bottom surface 101 of the nozzle 10.

[0048] Therefore, as a result of the partial conveyance air D1 to D4, each having a directivity that inclines horizontally from top to bottom, being ejected from the bottom surface 101 of the nozzle 10, a liquid conveyance air CW having a spiral-like directivity that spirals from top to bottom is generated by the combination of the partial conveyance air D1 to D4.

[0049] Thus, the nozzle 10 has a conveyance air generation function for generating the liquid conveyance air CW described above. For this reason, the coating liquid 40 output from the coating liquid supply port 13 of the nozzle 10 is supplied to the coating target structure along the directivity of the liquid conveyance air CW. That is, the coating liquid 40 is supplied to the coating target structure in a mode of being conveyed in a spiral shape by the liquid conveyance air CW.

[0050] The process of step S4 described above is executed by appropriately moving the nozzle 10 or the coating target structure so that the coating liquid 40 is supplied to the coating target area R51. When moving the coating target structure, a pedestal (not shown) that supports the coating target structure from below is moved.

[0051] Thus, since it is necessary to change the arrangement relationship between the nozzle 10 and the coating target structure to perform the coating process, relative movement processing between the nozzle 10 and the coating target structure is also executed during the execution period of the coating process in step S4.

[0052] As described above, in step S4, the coating process is executed by using the nozzle 10 disposed above the coating target structure and having the coating liquid supply port 13, and supplying the coating liquid 40 from the coating liquid supply port 13 to the coating target structure.

[0053] The nozzle 10 used in the coating process of step S4 generates a spiral-like liquid conveyance air CW from top to bottom, and supplies the coating liquid 40 to the coating target area R51 of the coating target structure along the flow by this liquid conveyance air CW.

[0054] Therefore, within the application target area R51, the coating liquid 40 is applied without coating leakage onto the exposed area of the resin insulating layer 32, the upper surfaces and side surfaces of the circuit patterns 31 and 31b respectively, the upper surface of the semiconductor element 1, and the outer circumferences of the plurality of wires 9 respectively.

[0055] Since the coating liquid 40 is conveyed by the liquid conveyance air CW, the coating liquid 40 can be supplied so that the coating liquid 40 hits each of the plurality of wires 9 from the horizontal direction.

[0056] As a result, in each of the plurality of wires 9, since the coating liquid 40 can also adhere to the lower side of each wire 9 including the back surface of each wire 9, the coating liquid 40 can be applied without coating leakage to the entire outer circumference of each wire 9.

[0057] After the execution of step S4, the drying process of step S5 is executed. The drying process is executed on the application target structure after the execution of step S4 at a drying temperature of about 180°C to 220°C and a drying time of about 0.5 to 4.0 (hours).

[0058] As a result, as shown in FIG. 3, within the application target area R51, the primary layer 4 is formed on the exposed area of the resin insulating layer 32, the upper surfaces and side surfaces of the circuit patterns 31 and 31b respectively, the upper surface of the semiconductor element 1, and the outer circumferences of the plurality of wires 9 respectively. The primary layer 4 uses a silane coupling agent as a constituent material.

[0059] Note that the film thickness of the primary layer 4 formed after the drying process of step S5 is thinner than the film thickness of the coating liquid 40 adhering to the wire 9 etc. after the execution of the coating process of step S4.

[0060] Also, the film thickness of the primary layer 4 can be adjusted by the supply flow rate of the coating liquid 40 from the nozzle 10, the drying time of the drying process in step S5, etc.

[0061] Returning to FIG. 2, after the execution of step S5, in step S6, the sealing material 5 is injected, and in step S7, the curing process of the sealing material 5 is executed. As a result, the semiconductor device 51 having the structure shown in FIG. 1 can be completed.

[0062] (Verification Results) FIG. 6 is an explanatory diagram showing in tabular form the verification results of the bonding strength of the primary layer 4 manufactured by the drying process in step S5.

[0063] As the drying temperatures in the drying process shown in FIG. 6, 180°C, 200°C, and 220°C are adopted, and as the drying times in the drying process, 0.5H (Hour), 1H, 2H, and 4H are adopted. The film thickness shown in FIG. 6 indicates the film thickness of the primary layer 4 after the execution of the drying process in step S5.

[0064] The numerical values shown in FIG. 6 represent the bonding strength after storing the completed semiconductor device 51 in a high-temperature and high-humidity environment. "Bonding strength" means the bonding strength between the sealing material 5 and the primary layer 4. The numerical values indicating the bonding strength are shown with the state immediately after the completion of the semiconductor device 51 as an initial value of "100". Therefore, it can be seen that the closer the numerical value indicating the bonding strength is to "100", the less the deterioration from the initial state.

[0065] As shown in the second row of FIG. 6, when the primary layer 4 with a film thickness of 200 nm was obtained at a drying temperature of 180°C, it was confirmed that the numerical value was "96" with less deterioration at a drying time of 1 hour, and it was confirmed that the numerical value was "104" and the bonding strength was improved at a drying time of 2 hours.

[0066] As shown in the third row of FIG. 6, when the primary layer 4 with a film thickness of 500 nm was obtained at a drying temperature of 180°C, it was confirmed that there was no particularly good drying time with less deterioration of the bonding strength. At a drying temperature of 180°C, it is considered that the reaction of the coating liquid 40 that becomes the primary layer 4 is insufficient, resulting in a decrease in the strength within the primary layer 4.

[0067] As shown in the fourth line of FIG. 6, when the primary layer 4 with a film thickness of 500 nm was obtained at a drying temperature of 200°C, it was confirmed that the numerical value became "99" with a drying time of 0.5 hours and the deterioration was small.

[0068] As shown in the last line of FIG. 6, when the primary layer 4 with a film thickness of 500 nm was obtained at a drying temperature of 220°C, it was confirmed that there was no particularly good drying time with little deterioration of the bonding strength. At a drying temperature of 220°C, it is considered that the functional groups on the outermost surface of the primary layer 4 are detached, resulting in a decrease in the strength of the interface of the primary layer 4.

[0069] From the verification results shown in FIG. 6, when the film thickness of the primary layer 4 is set to the ideal range of 200 nm to 500 nm, in order to suppress the deterioration of the bonding strength, it is estimated that the drying temperature should be set to 190 to 210°C and the drying time should be set to about 15 to 45 minutes.

[0070] The condition of the drying temperature {190 to 210°C} is presumed to be a condition where the balance between the formation of cross-linking in the film and the detachment of functional groups necessary to ensure the bonding strength with the sealing material 5 is achieved at the ideal film thickness of the primary layer 4 of 200 to 500 nm.

[0071] Note that "cross-linking" means the bond between the molecules of the silane coupling agent that constitutes the primary layer 4. "Functional group" is NH2 in the case of an amino group-containing silane coupling agent. Therefore, "detachment of functional groups" means that {NH2} disappears due to heat treatment. When the functional groups are detached, the reaction sites with the sealing material 5 decrease, leading to a decrease in the strength with the sealing material 5.

[0072] (Effect) Thus, in the method for manufacturing a semiconductor device according to Embodiment 1, the nozzle 10 used in the coating process of step S4 has a conveyance air generation function, generates a spiral liquid conveyance air CW by a combination of partial conveyance airs D1 to D4, and supplies the coating liquid 40 to the structure to be coated along the flow by this liquid conveyance air CW.

[0073] Therefore, after the execution of step S4, the coating liquid 40 can be applied without coating leakage to the outer periphery of each wire 9 including the back surface of each wire 9. That is, the coating liquid 40 can be accurately applied to the entire circumference of each of the plurality of wires 9 existing in the coating target region R51.

[0074] As a result, in the manufacturing method of the semiconductor device according to the first embodiment, after the execution of the drying process in step S5, the primary layer 4 made of a silane coupling agent as a constituent material can be accurately formed on the outer periphery of each wire 9 including the back surface of each wire 9. That is, in the manufacturing method of the semiconductor device according to the first embodiment, the primary layer 4 can be provided over the entire outer periphery of each of the plurality of wires 9.

[0075] Furthermore, in the manufacturing method of the semiconductor device according to the first embodiment, by performing a sealing process using the sealing material 5 in steps S6 and S7, a semiconductor device 51 having a structure in which the semiconductor element 1, the plurality of wires 9, and the primary layer 4 are protected by the sealing material can be obtained.

[0076] In this semiconductor device 51, the primary layer 4 made of a silane coupling agent as a constituent material is accurately provided on the outer periphery of each wire 9 including the back surface of each wire 9. For this reason, the bonding strength between the wire 9 and the sealing material 5 over the entire circumference of each wire 9 can be appropriately maintained, and the phenomenon that the sealing material 5 peels off during the use of the semiconductor device 51 can be reliably avoided.

[0077] That is, since there is no region where the bonding strength between each wire 9 and the sealing material 5 becomes weak, there is no starting point for the sealing material 5 to peel off when thermal stress occurs during the use of the semiconductor device 51. Therefore, the sealing material 5 does not peel off during the use of the semiconductor device 51.

[0078] As a result, the semiconductor device 51 packaged with the sealing material 5 has improved resistance to thermal stress during use and can achieve a longer service life.

[0079] Furthermore, the coating liquid 40 supplied from the nozzle 10 is an alcohol dilution of a silane coupling agent and satisfies the dilution condition that "the concentration of the silane coupling agent is 1% or less".

[0080] This dilution condition is determined based on the examination results including the wettability of the coating liquid 40 and the optimization of the heat treatment conditions in the drying process executed in step S5.

[0081] Therefore, the method for manufacturing a semiconductor device according to the first embodiment can accurately apply the coating liquid 40 around each wire 9 after the execution of the coating process in step S4 by supplying the coating liquid 40 that satisfies the above dilution condition from the nozzle 10.

[0082] (Regarding the conveyance air generation function) The nozzle 10 used in the method for manufacturing a semiconductor device according to the first embodiment has a conveyance air generation function of generating a swirling liquid conveyance air CW that swirls downward from top to bottom by a combination of partial conveyance airs D1 to D4. Hereinafter, the mode in which the combination of partial conveyance airs D1 to D4 is used as the liquid conveyance air CW is taken as the basic mode.

[0083] The generation of the liquid conveyance air CW is not limited to the above-described basic mode, and various modes are conceivable. As the minimum necessary mode for generating the liquid conveyance air CW, a mode of injecting only the first and second partial conveyance airs is conceivable. That is, the liquid conveyance air CW in the minimum necessary mode is a combination of the first and second partial conveyance airs.

[0084] Hereinafter, the conditions of the minimum necessary mode will be described. The nozzle has a first air supply port for supplying the first partial conveyance air and a second air supply port for supplying the second partial conveyance air, and the coating liquid supply port 13 is provided between the first and second gas supply ports.

[0085] The first partial conveyance air has a first directivity that inclines in a first direction from top to bottom, and the second partial conveyance air has a second directivity that inclines in a second direction from top to bottom. Here, the first direction and the second direction are opposite to each other.

[0086] For example, as a minimum necessary mode, a first mode can be considered in which the partial conveyance airflows D1 and D3 shown in FIGS. 4 and 5 are used as the first and second partial conveyance airflows. That is, in the first mode, only the air supply ports 141 and 143 are provided in the nozzle 10, and the air supply ports 142 and 144 are not provided.

[0087] As described above, the partial conveyance airflow D1 has a directivity that inclines in the +X direction, which is the first direction, from top to bottom, and the partial conveyance airflow D3 has a directivity that inclines in the -X direction, which is the second direction, from top to bottom.

[0088] Since the +X direction and the -X direction are opposite to each other, the first direction and the second direction are opposite to each other.

[0089] Thus, in the first mode of the minimum necessary mode, a spiral liquid conveyance airflow CW can be generated by the combination of the partial conveyance airflows D1 and D3.

[0090] In addition, as a minimum necessary mode, a second mode can be considered in which the partial conveyance airflows D2 and D4 shown in FIGS. 4 and 5 are used as the first and second partial conveyance airflows. That is, in the second mode, only the air supply ports 142 and 144 are provided in the nozzle 10, and the air supply ports 141 and 143 are not provided.

[0091] As described above, the partial conveyance airflow D2 has a directivity that inclines in the Y direction, which is the first direction, from top to bottom - and the partial conveyance airflow D4 has a directivity that inclines in the Y direction, which is the second direction, from top to bottom + and has a directivity that inclines in the Y direction.

[0092] Since the +Y direction and the -Y direction are opposite to each other, the first direction and the second direction are opposite to each other.

[0093] Thus, in the second mode of the minimum necessary mode, a spiral liquid conveyance airflow CW can be generated by the combination of the partial conveyance airflows D2 and D4.

[0094] The basic aspect is a combination of the first aspect and the second aspect. Therefore, by appropriately adding the minimum necessary aspects, an extended aspect may be adopted in which 2n (n is an integer greater than or equal to 1) partial conveyance airflows are ejected from the nozzle 10 so that the number of partial conveyance airflows is an even number such as 6 or 8. For example, when adopting an extended aspect in which eight partial conveyance airflows are ejected from the nozzle 10, eight air supply ports that evenly surround the coating liquid supply port 13 in a plan view may be provided and configured with four sets of the minimum necessary aspects.

[0095] As described above, the first and second aspects that are the minimum necessary aspects of the nozzle 10 used in the method for manufacturing a semiconductor device according to the first embodiment can be considered. In the minimum necessary aspects, by supplying the first and second partial conveyance airflows that satisfy the requirements of the minimum necessary aspects described above from the first and second air supply ports, a spiral liquid conveyance airflow CW can be generated.

[0096] Therefore, a nozzle that satisfies the minimum necessary aspects can be realized with a relatively simple structure in which the first and second air supply ports are provided in the nozzle, so that the manufacturing cost can be reduced.

[0097] In the basic aspect, as shown in FIG. 4, four partial conveyance airflows D1 to D4 are generated. The partial conveyance airflows D1 to D4 have a combined directivity that surrounds the coating liquid supply port 13 counterclockwise in a plan view on the XY plane.

[0098] It is considered that the liquid conveyance airflow CW can also be generated by this combined directivity. Here, an aspect in which the liquid conveyance airflow CW is generated in K (≧ 3) partial conveyance airflows that satisfy the following combination conditions is taken as a modified aspect.

[0099] Combination conditions: The K (≧ 3) partial conveyance airflows have a combined directivity that surrounds the coating liquid supply port 13 in a common direction in a plan view. The common direction is either clockwise or counterclockwise.

[0100] In a modified aspect, the K can be either odd or even. For example, when K = 3, three air supply ports that evenly surround the coating liquid supply port 13 in a plan view are provided, and the first to third partial conveyance air jets ejected from the three air supply ports satisfy "a combined directivity in one of the clockwise and counterclockwise directions with respect to the coating liquid supply port 13 in a plan view". Note that the basic aspect can also be considered as a modified aspect with K = 4.

[0101] <Embodiment 2> FIG. 7 is an explanatory diagram schematically showing a state of a coating process by a nozzle 10B used in the method for manufacturing a semiconductor device according to Embodiment 2. An XYZ orthogonal coordinate system is shown in FIG. 7.

[0102] Embodiment 2 is different from Embodiment 1 in that the coating process shown in step S4 of FIG. 2 is performed using the nozzle 10B instead of the nozzle 10. Hereinafter, the description will focus on the characteristic parts of the method for manufacturing a semiconductor device according to Embodiment 2.

[0103] The processes of steps S1 to S3 shown in FIG. 2 are performed in the same manner as in Embodiment 1, and then in step S4, a coating process on the coating target structure is executed using the nozzle 10B shown in FIG. 7.

[0104] The nozzle 10B includes a nozzle body 11 and air ejection pipes 121 to 124 as constituent elements. Note that only the air ejection pipes 122 and 124 are shown in FIG. 7. Note that the air ejection pipes 122 and 124 are shown schematically and do not match the actual structure.

[0105] A coating liquid supply port (not shown) is provided on the bottom surface of the nozzle body 11. This coating liquid supply port supplies the coating liquid 40 to the lower coating target structure by ejecting the coating liquid 40, similar to the coating liquid supply port 13 provided in the nozzle 10 of Embodiment 1. The content of the coating liquid 40 is the same as that in Embodiment 1.

[0106] Air ejection pipes 121 to 124 are provided on the four sides of the nozzle body 11. Specifically, an air ejection pipe 121 is provided on the -Y direction side with respect to the nozzle body 11, an air ejection pipe 122 is provided on the +X direction side with respect to the nozzle body 11, an air ejection pipe 123 is provided on the +Y direction side with respect to the nozzle body 11, and an air ejection pipe 124 is provided on the -X direction side with respect to the nozzle body 11.

[0107] Partial conveyance air D1 to D4 is ejected from the air ejection pipes 121 to 124. The partial conveyance air D1 to D4 are each air having a directivity that inclines in the horizontal direction from top to bottom. Specifically, the partial conveyance air D1 has a directivity that inclines in the +X direction from top to bottom, and the partial conveyance air D2 - has a directivity that inclines in the Y direction, the conveyance air D3 has a directivity that inclines in the -X direction from top to bottom, and the partial conveyance air D4 + has a directivity that inclines in the Y direction from top to bottom.

[0108] Each of the air ejection pipes 121 to 124 is composed of an upper upper partial pipe and a lower lower partial pipe. For example, as shown in FIG. 7, the air ejection pipe 122 has an upper partial pipe 122u and a lower partial pipe 122d.

[0109] The upper partial pipe 122u is formed along the Z direction. The lower partial pipe 122d is provided with an inclination in the horizontal direction along the -Z direction. That is, the air ejection pipe 122 is provided with an inclination in the +Y direction from top to bottom. Therefore, the partial conveyance air D2 finally ejected from the lower partial pipe 122d has a directivity that inclines in the +Y direction from top to bottom, reflecting the inclination of the lower partial pipe 122d.

[0110] Thus, the air ejection pipes 121 to 124 of the nozzle 10B in the second embodiment correspond one-to-one with the air supply ports 141 to 144 provided in the nozzle 10 in the first embodiment, and have the same inclination in the horizontal direction from top to bottom as the air supply ports 141 to 144.

[0111] Therefore, the partial conveyance airflows D1 to D4 ejected from the air ejection pipes 121 to 124 have the same directivity as the partial conveyance airflows D1 to D4 ejected from the air supply ports 141 to 144 in the first embodiment. That is, in the second embodiment, similar to the basic mode shown in the first embodiment, the combination of the partial conveyance airflows D1 to D4 is used as the liquid conveyance airflow CW.

[0112] As a result of the partial conveyance airflows D1 to D4, each having a directivity that inclines horizontally from top to bottom, being ejected from the air ejection pipes 121 to 124, a spiral-shaped liquid conveyance airflow CW having the same directivity as in the first embodiment is generated by the combination of the partial conveyance airflows D1 to D4. For this reason, the coating liquid 40 ejected downward from the nozzle body 11 is supplied to the coating target structure along the directivity of the liquid conveyance airflow CW.

[0113] Also in the second embodiment, during the execution period of the coating process in step S4, similar to the first embodiment, the relative movement process between the nozzle 10B and the coating target structure is also executed.

[0114] After the execution of step S4, steps S5 to S7 similar to those in the first embodiment are performed, whereby the semiconductor device 51 having the structure shown in FIG. 1 can be completed.

[0115] (Regarding the conveyance airflow generation function) The nozzle 10B used in the method for manufacturing a semiconductor device according to the second embodiment has a conveyance airflow generation function of generating a spiral-shaped liquid conveyance airflow CW by the combination of the partial conveyance airflows D1 to D4. The nozzle 10B has a conveyance airflow generation function based on the basic mode of generating the partial conveyance airflows D1 to D4, similar to the nozzle 10 in the first embodiment.

[0116] Therefore, similar to the nozzle 10 in the first embodiment, the nozzle 10B in the second embodiment can generate the liquid conveyance airflow CW even when changed to the minimum necessary mode.

[0117] Hereinafter, the conditions of the minimum necessary mode in Embodiment 2 will be described. The nozzle has a first air ejection pipe for supplying a first partial conveyance air flow and a second air ejection pipe for supplying a second partial conveyance air flow, and a nozzle body 11 having a coating liquid supply port is provided between the first and second air ejection pipes. The first air ejection pipe functions as a first air supply member for supplying the first partial conveyance air flow, and the second air ejection pipe functions as a second air supply member for supplying the second partial conveyance air flow.

[0118] The first partial conveyance air flow has a first directivity that inclines in a first direction from top to bottom, and the second partial conveyance air flow has a second directivity that inclines in a second direction from top to bottom. Here, the first direction and the second direction are opposite to each other.

[0119] As a first aspect of the minimum necessary mode, a configuration in which only the air ejection pipes 121 and 123 are provided in the nozzle 10B and the air ejection pipes 122 and 124 are not provided is conceivable. That is, a configuration in which the first and second air supply members are the air ejection pipes 121 and 123 is the first aspect.

[0120] As a second aspect of the minimum necessary mode, a configuration in which only the air ejection pipes 122 and 124 are provided in the nozzle 10B and the air ejection pipes 121 and 123 are not provided is conceivable. That is, a configuration in which the first and second air supply members are the air ejection pipes 122 and 124 is the second aspect.

[0121] Therefore, also in Embodiment 2, by appropriately adding the minimum necessary mode, an extended mode in which 2n (n is an integer of n≥1) partial conveyance air flows are ejected from 2n air ejection pipes so that the number of partial conveyance air flows becomes an even number such as 6 or 8 may be adopted.

[0122] As described above, the first and second aspects as the minimum necessary mode of the nozzle 10B used in the method for manufacturing a semiconductor device according to Embodiment 2 are conceivable. In the minimum necessary mode, by supplying the first and second partial conveyance air flows that satisfy the requirements of the minimum necessary mode described above from the first and second air ejection pipes, a spiral liquid conveyance air flow CW can be generated.

[0123] Therefore, the nozzle 10B that satisfies the minimum requirements can be realized with a relatively simple configuration having a nozzle body 11 and first and second air ejection pipes, so that the manufacturing cost can be reduced.

[0124] Also, in the nozzle 10B of the second embodiment, the same modifications as those of the nozzle 10 in the first embodiment can be adopted.

[0125] <Embodiment 3> FIG. 8 is an explanatory diagram schematically showing the ultrasonic vibration function of a nozzle 10C used in the method for manufacturing a semiconductor device according to Embodiment 3. An XYZ orthogonal coordinate system is shown in FIG. 8.

[0126] As shown in the figure, the nozzle 10B is provided with a head 17 and a conduit 18 inside the coating liquid supply port 13. Note that in FIG. 8, the coating liquid supply port 13 and its peripheral region in the nozzle 10C are locally illustrated.

[0127] Embodiment 3 is different from Embodiment 1 in that the coating process shown in step S4 of FIG. 2 is performed using the nozzle 10C instead of the nozzle 10. Hereinafter, the description will focus on the characteristic portions of the method for manufacturing a semiconductor device according to Embodiment 3.

[0128] After the same processes as those in steps S1 to S3 of Embodiment 1 shown in FIG. 2 are executed, in step S4, a coating process for the structure to be coated is executed using the nozzle 10C shown in FIG. 8.

[0129] Hereinafter, the ultrasonic vibration function of the nozzle 10C shown in FIG. 8 will be described in detail. An ultrasonic oscillator (not shown) generates an electrical signal, and the electrical signal is transmitted to the head 17 via the conduit 18. Then, the head 17 vibrates as an ultrasonic vibrator in response to the electrical signal, and the ultrasonic vibration by the head 17 is applied to the coating liquid flowing in the coating liquid supply port 13. At this time, the vibration frequency of the ultrasonic wave is set to 60 to 120 kHz.

[0130] As a result, the coating liquid 40 in the coating liquid supply port 13 is atomized into minute and uniform droplets of about 20 to 30 μm and supplied downward from the coating liquid supply port 13. Thus, the nozzle 10C has an ultrasonic vibration function for atomizing the coating liquid 40.

[0131] In the nozzle 10C, similar to the nozzle 10 of the first embodiment, four air supply ports corresponding to the air supply ports 141 to 144 are provided on the four sides of the coating liquid supply port 13. Instead of providing a plurality of air supply ports in the nozzle 10C, four air ejection pipes corresponding to the air ejection pipes 121 to 124 of the second embodiment may be provided around the nozzle 10C.

[0132] Therefore, the four partial conveyance airflows ejected from the four air supply ports have the same directivity as the partial conveyance airflows D1 to D4 in the first embodiment or the second embodiment. That is, the nozzle 10C of the third embodiment has a conveyance airflow generation function in which a combination of four partial conveyance airflows is used as the liquid conveyance airflow CW, similar to the basic modes of the first embodiment and the second embodiment.

[0133] As a result of the four partial conveyance airflows each having a directivity that inclines horizontally from top to bottom being ejected from the four air supply ports of the nozzle 10C, a spiral-shaped liquid conveyance airflow CW having the same directivity as in the first embodiment and the second embodiment is generated by the combination of the four partial conveyance airflows. For this reason, the coating liquid 40 in the state of minute droplets supplied from the bottom surface of the nozzle 10C is supplied to the coating target structure along the directivity of the liquid conveyance airflow CW.

[0134] Also in the third embodiment, during the execution period of the coating process in step S4, relative movement processing between the nozzle 10C and the coating target structure is executed in the same manner as in the first embodiment.

[0135] After the execution of step S4, steps S5 to S7 similar to those in the first embodiment are performed, whereby the semiconductor device 51 having the structure shown in FIG. 1 can be obtained.

[0136] As described above, since the nozzle 10C used in the manufacturing method of the semiconductor device according to the third embodiment further has an ultrasonic vibration function, it is possible to supply the coating liquid 40 in a minute and uniform droplet state of about 20 to 30 μm when performing the coating process in step S4.

[0137] Therefore, in the manufacturing method of the semiconductor device according to the third embodiment, the coating liquid can be accurately applied to the outer periphery of each of the plurality of wires 9 when performing the coating process in step S4.

[0138] As a result, in the semiconductor device 51 manufactured by the manufacturing method of the semiconductor device according to the third embodiment, the primary layer 4 can be formed more stably over the entire circumference of each wire 9.

[0139] <Embodiment 4> FIG. 9 is an explanatory diagram schematically showing a state of a coating process by a nozzle 10D used in the manufacturing method of the semiconductor device according to the fourth embodiment. FIG. 10 is an explanatory diagram schematically showing a planar structure of the nozzle 10D shown in FIG. 9 as viewed from above. An XYZ orthogonal coordinate system is shown in each of FIGS. 9 and 10.

[0140] The fourth embodiment is different from the first embodiment in that the coating process shown in step S4 of FIG. 2 is performed using the nozzle 10D instead of the nozzle 10. Hereinafter, the description will focus on the characteristic part of the manufacturing method of the semiconductor device according to the fourth embodiment.

[0141] The processes of steps S1 to S3 shown in FIG. 2 are performed in the same manner as in the first embodiment, and then, in step S4, a coating process on the coating target structure is performed using the nozzle 10D shown in FIG. 9.

[0142] As shown in FIGS. 9 and 10, the nozzle 10D includes a nozzle body 19 and a cover member 16 as main components. The cover member 16 is provided in such a manner that a cover upper surface 16s is disposed in a peripheral region of the lower end portion of the nozzle body 19.

[0143] As shown in FIG. 10, the cover upper surface 16s of the cover member 16 has a square shape in plan view. The planar structure of the cover upper surface 16s assumes a case where the planar structure of the structure to be coated is rectangular. Note that the planar structure of the cover upper surface 16s is not limited to a square shape, and may be a rectangular shape other than a square or a circular shape.

[0144] The cover protrusion 16t is provided in the four peripheral regions of the cover upper surface 16s in plan view, and protrudes downward in the -Z direction as shown in FIG. 9.

[0145] Thus, since the nozzle 10D has the cover member 16 around the nozzle body 11, the supply region of the coating liquid 40 can be restricted within the cover inner region R16 surrounded by the cover protrusion 16t.

[0146] A coating liquid supply port (not shown) is provided on the bottom surface of the nozzle body 19. Similar to the coating liquid supply port 13 provided in the nozzle 10 of the first embodiment, this coating liquid supply port supplies the coating liquid 40 to the lower structure to be coated by ejecting the coating liquid 40.

[0147] Furthermore, in the nozzle 10D, similar to the nozzle 10 of the first embodiment, four air supply ports corresponding to the air supply ports 141 to 144 are provided on the four sides of the coating liquid supply port. Instead of providing a plurality of air supply ports in the nozzle body 19, four air ejection pipes corresponding to the air ejection pipes 121 to 124 of the second embodiment may be provided around the nozzle body 19.

[0148] Therefore, the four partial conveyance airflows ejected from the four air supply ports have the same directivity as the partial conveyance airflows D1 to D4 of the first and second embodiments. That is, the nozzle 10D of the fourth embodiment has a conveyance airflow generation function in which the combination of the four partial conveyance airflows is used as the liquid conveyance airflow CW, similar to the basic modes of the first and second embodiments.

[0149] As a result of the four partial conveyance airflows each having a directivity that inclines horizontally from top to bottom being ejected from the four air supply ports of the nozzle 10D, a spiral directivity liquid conveyance airflow CW is generated by the combination of the four partial conveyance airflows, similar to those in the first and second embodiments. For this reason, the coating liquid 40 ejected from the bottom surface of the nozzle body 19 is supplied to the coating target structure along the directivity of the liquid conveyance airflow CW.

[0150] Also in the fourth embodiment, during the execution period of the coating process in step S4, relative movement processing between the nozzle 10D and the coating target structure is executed in the same manner as in the first embodiment.

[0151] At this time, since the nozzle 10D has the cover member 16 that restricts the supply area of the coating liquid 40 within the inner area R16 of the cover, the coating liquid 40 can be accurately supplied only within the coating target area R51.

[0152] That is, by appropriately setting the distance between the nozzle 10D and the coating target structure and the supply flow rate of the coating liquid 40, and appropriately performing the relative movement processing, the coating liquid 40 can be accurately supplied within the coating target area R51.

[0153] After the execution of step S4, steps S5 to S7 similar to those in the first embodiment are performed, whereby the semiconductor device 51 having the structure shown in FIG. 1 can be completed.

[0154] Since the nozzle 10D used in the manufacturing method of the semiconductor device of the fourth embodiment has the cover member 16, the coating process in step S4 can be executed with high precision so that the coating liquid 40 is not supplied to areas other than the coating target area R51 in the coating target structure.

[0155] As a result, the manufacturing method of the semiconductor device of the fourth embodiment can surely avoid, for example, forming the primary layer 4 on the signal terminal 7 that functions as an external terminal outside the coating target area R51, and thus the semiconductor device 51 can be manufactured without performance degradation.

[0156] The external terminal region 7X of the signal terminal 7 is electrically connected to external wiring or the like by soldering or the like. However, if the primary layer 4 adheres to the external terminal region 7X, it may interfere with the electrical connection to the external wiring or the like.

[0157] In the method for manufacturing a semiconductor device according to the fourth embodiment, since the nozzle 10D that performs the coating process has the cover member 16, the above-mentioned problems do not occur.

[0158] Furthermore, since the nozzle 10D itself has the cover member 16, even if the product size of the manufactured semiconductor device is changed, the coating process in step S4 can be executed using the nozzle 10D as it is.

[0159] Note that the product size of the semiconductor device mainly means the occupied area on the XY plane. When the product size of the semiconductor device is changed, the occupied area of the coating target structure will inevitably be changed.

[0160] However, even if the cover member 16 of the nozzle 10D is used as it is, by changing the content of the relative movement process between the nozzle 10D and the coating target structure, it is possible to cope with the change in the occupied area of the coating target structure.

[0161] On the other hand, when providing a device-side cover member to the coating target structure so as to surround the coating target region R51, every time the product size of the semiconductor device to be manufactured is changed, it is necessary to change to a device-side cover member of a different size.

[0162] As described above, the method for manufacturing a semiconductor device according to the fourth embodiment can improve workability because it is not necessary to replace the cover member 16 of the nozzle 10D even if the product size of the semiconductor device to be manufactured is changed.

[0163] <Others> Note that within the scope of the present disclosure, it is possible to freely combine each embodiment, or appropriately deform or omit each embodiment.

[0164] For example, the ultrasonic vibration function of the nozzle 10C in Embodiment 3 may be adopted for the nozzle 10 in Embodiment 1, the nozzle 10B in Embodiment 2, or the nozzle 10D in Embodiment 4.

[0165] Also, the cover member 16 of the nozzle 10D in Embodiment 4 may be attached to the nozzle 10 in Embodiment 1 or the nozzle 10C in Embodiment 3.

[0166] Hereinafter, various aspects of the present disclosure will be collectively described as appendices.

[0167] (Appendix 1) (a) Preparing a coating target structure including a semiconductor element and a wire electrically connected to the semiconductor element; (b) Performing a coating process of supplying a coating liquid from the coating liquid supply port toward the coating target structure using a nozzle disposed above the coating target structure and having a coating liquid supply port; (c) After performing step (b), drying the coating target structure, The coating liquid contains a silane coupling agent, The nozzle has a transport air generation function of generating a swirling liquid transport air flow from top to bottom, The coating liquid is supplied to the coating target structure along the flow by the liquid transport air, A method for manufacturing a semiconductor device.

[0168] (Appendix 2) A method for manufacturing a semiconductor device according to Appendix 1, wherein The coating liquid is an alcohol dilution of a silane coupling agent, The concentration of the silane coupling agent is 1% or less, A method for manufacturing a semiconductor device.

[0169] (Appendix 3) A method for manufacturing a semiconductor device according to Appendix 1 or Appendix 2, wherein The nozzle is Further comprising a cover member provided to limit the supply area of the coating liquid below the nozzle. Method for manufacturing a semiconductor device.

[0170] (Appendix 4) A method for manufacturing a semiconductor device according to any one of Appendices 1 to 3, wherein the nozzle has an ultrasonic vibration function for atomizing the coating liquid with ultrasonic waves of 60 to 120 kHz. Method for manufacturing a semiconductor device.

[0171] (Appendix 5) A method for manufacturing a semiconductor device according to any one of Appendices 1 to 4, wherein the liquid conveyance air includes a combination of first and second partial conveyance airs, the nozzle further has a first air supply port for supplying the first partial conveyance air, and a second air supply port for supplying the second partial conveyance air, the coating liquid supply port is provided between the first and second air supply ports, the first partial conveyance air inclines in a first direction from top to bottom, the second partial conveyance air inclines in a second direction from top to bottom, the first direction and the second direction are opposite to each other. Method for manufacturing a semiconductor device.

[0172] (Appendix 6) A method for manufacturing a semiconductor device according to any one of Appendices 1 to 4, wherein the liquid conveyance air includes first and second partial conveyance airs, the nozzle has a nozzle body having the coating liquid supply port, a first air supply member for supplying the first partial conveyance air, and a second air supply member for supplying the second partial conveyance air, the nozzle body is provided between the first and second air supply members, The first partial conveyance air flow inclines in a first direction from top to bottom. The second partial conveyance air flow inclines in a second direction from top to bottom. The first direction and the second direction are opposite to each other. Method for manufacturing a semiconductor device.

[0173] (Appendix 7) A method for manufacturing a semiconductor device according to any one of Appendices 1 to 6, after the execution of step (c), a primary layer made of a silane coupling agent is provided on the outer periphery of the wire, The method for manufacturing a semiconductor device (d) further includes a step of providing a sealing material to cover the semiconductor element, the wire, and the primary layer, which is executed after step (c). Method for manufacturing a semiconductor device.

[0174] (Appendix 8) A semiconductor element and a wire electrically connected to the semiconductor element, a primary layer provided on the outer periphery of the wire including the back surface of the wire, made of a silane coupling agent as a constituent material, a case that houses the semiconductor element, the wire, and the primary layer therein, and a sealing material provided to cover the semiconductor element, the wire, and the primary layer in the case. Semiconductor device.

Explanation of Reference Numerals

[0175] 1 Semiconductor element, 2 Bonding material, 3 Resin insulating substrate, 4 Primary layer, 5 Sealing material, 7 Signal terminal, 8 Case, 9 Wire, 10, 10B to 10D Nozzle, 11, 19 Nozzle body, 13 Coating liquid supply port, 16 Cover member, 40 Coating liquid, 51 Semiconductor device, 121 to 124 Air ejection pipes, 141 to 144 Air supply ports, CW Liquid conveyance air flow, D1 to D4 Partial conveyance air flows.

Claims

1. (a) Preparing a structure to be coated including a semiconductor element and a wire electrically connected to the semiconductor element; (b) Performing a coating process of supplying a coating liquid from the coating liquid supply port toward the structure to be coated using a nozzle disposed above the structure to be coated and having a coating liquid supply port; (c) After performing step (b), drying the structure to be coated, wherein the coating liquid contains a silane coupling agent; the nozzle has a transport air generation function of generating a swirling liquid transport air flowing from top to bottom; the coating liquid is supplied to the structure to be coated along the flow by the liquid transport air; the nozzle, further has a cover member provided to limit a supply region of the coating liquid below the nozzle; A method for manufacturing a semiconductor device.

2. A method for manufacturing a semiconductor device according to Claim 1, wherein the coating liquid is an alcohol dilution of a silane coupling agent, and the concentration of the silane coupling agent is 1% or less. A method for manufacturing a semiconductor device.

3. A method for manufacturing a semiconductor device according to Claim 1, wherein the nozzle, further has an ultrasonic vibration function of atomizing the coating liquid with ultrasonic waves of 60 to 120 kHz. A method for manufacturing a semiconductor device.

4. A method for manufacturing a semiconductor device according to Claim 1, wherein the liquid transport air includes a combination of first and second partial transport airs, the nozzle, further has a first air supply port for supplying the first partial transport air, and a second air supply port for supplying the second partial transport air, the coating liquid supply port is provided between the first and second air supply ports, the first partial transport air inclines in a first direction from top to bottom, the second partial transport air inclines in a second direction from top to bottom, and the first direction and the second direction are opposite to each other. A method for manufacturing a semiconductor device.

5. A method for manufacturing a semiconductor device according to Claim 1, wherein the liquid transport air includes first and second partial transport airs, the nozzle, has a nozzle body having the coating liquid supply port, a first air supply member for supplying the first partial transport air, and a second air supply member for supplying the second partial transport air, the nozzle body is provided between the first and second air supply members, the first partial transport air inclines in a first direction from top to bottom, and the second partial transport air inclines in a second direction from top to bottom. The first direction and the second direction are opposite to each other. Method for manufacturing a semiconductor device. **Claim 6**: (a) A step of preparing a coating target structure including a semiconductor element and a wire electrically connected to the semiconductor element; (b) A step of performing a coating process of supplying a coating liquid from the coating liquid supply port toward the coating target structure using a nozzle disposed above the coating target structure and having a coating liquid supply port; (c) A step of drying the coating target structure after the execution of step (b). The coating liquid contains a silane coupling agent. The nozzle has a conveyance air generation function of generating a swirling spiral-like liquid conveyance air flowing from top to bottom. The coating liquid is supplied to the coating target structure along the flow by the liquid conveyance air. The liquid conveyance air includes first and second partial conveyance airs. The nozzle has a nozzle body having the coating liquid supply port, a first air supply member for supplying the first partial conveyance air, and a second air supply member for supplying the second partial conveyance air. The nozzle body is provided between the first and second air supply members. The first partial conveyance air inclines in a first direction from top to bottom. The second partial conveyance air inclines in a second direction from top to bottom. The first direction and the second direction are opposite to each other. Method for manufacturing a semiconductor device. **Claim 7** The method for manufacturing a semiconductor device according to any one of claims 1 to 6, wherein after the execution of step (c), a primary layer made of a silane coupling agent is provided on the outer periphery of the wire. The method for manufacturing a semiconductor device (d) further includes a step of providing a sealing material covering the semiconductor element, the wire, and the primary layer after the execution of step (c). Method for manufacturing a semiconductor device.

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