Display device with touch and fingerprint sensor

Abstract

This display device equipped with a touch and fingerprint detection function includes: a display unit having a plurality of data signal lines and at least one first sensor electrode; a terminal part having a first terminal and a second terminal; and a switching circuit that is disposed between the display unit and the terminal part, that has a single input terminal and a plurality of output terminals, and that distributes an input signal inputted to the single input terminal to the plurality of output terminals. The switching circuit is structured such that the input side thereof is connected to the first terminal, the plurality of data signal lines are connected to the plurality of output terminals, and the at least one first sensor electrode is connected to the second terminal.

Description

Technical Field

[0001] One embodiment of the present invention relates to a display device to which a sensor capable of detecting biometric information such as fingerprints and palm prints is added in addition to the function as a touch sensor.

Background Art

[0002] In order to prevent unauthorized use and protect personal information, the development of electronic devices that identify users by biometric authentication has been underway. For example, a display device in which a fingerprint authentication sensor is mounted on the back of a display panel in which pixels are formed of organic light-emitting diodes has been disclosed (see Patent Document 1). In addition, a display device in which a touch sensor is provided on the display panel and capable of recognizing fingerprints and touch pressure has been disclosed (see Patent Document 2).

Prior Art Documents

Patent Documents

[0003]

Patent Document 1

Patent Document 2

Summary of the Invention

Problems to be Solved by the Invention

[0004] Portable electronic devices in which the display screen occupies the entire front surface of the device have a market need to enable fingerprint authentication everywhere on the display screen in order to enhance functionality. In response to such a need, the display device disclosed in Patent Document 1 has a problem that it cannot detect fingerprints over the entire screen because the fingerprint authentication sensor is mounted as a small individual component. If fingerprint authentication is to be enabled over the entire screen, there is a problem that the housing becomes large.

[0005] On the other hand, in the display device disclosed in Patent Document 2, since the circuit for image display and the circuit for driving the fingerprint sensor are completely separated, there is a problem that the number of connection terminals for signal input and output significantly increases. The size of the display panel is determined by the electronic device to be mounted, and the positions where the connection terminals can be arranged are also limited. Therefore, in addition to the connection terminals for inputting video signals, when adding terminals for outputting signals of the fingerprint sensor, it is necessary to narrow the pitch of the connection terminals. However, when the pitch of the terminal electrodes becomes narrow, it becomes difficult to connect to the flexible printed circuit board by the conventional connection method using an anisotropic conductive film (ACF), and the yield decreases, which becomes a problem.

Means for Solving the Problems

[0006] The display device with touch and fingerprint detection functions according to an embodiment of the present invention includes a display unit including a plurality of data signal lines and at least one first sensor electrode, a terminal unit including a first terminal and a second terminal, and a switching circuit disposed between the display unit and the terminal unit, having one input end and a plurality of output ends, and distributing an input signal input to the one input end to the plurality of output ends. The switching circuit has a structure in which the input side is connected to the first terminal, the plurality of data signal lines are connected to the plurality of output ends, and at least one first sensor electrode is connected to the second terminal.

[0007] The display device with a touch and fingerprint sensor according to an embodiment of the present invention includes a first sensor electrode extending in a first direction, a second sensor electrode extending in a second direction intersecting the first direction, a scanning signal line extending in the second direction, a pixel overlapping the second sensor electrode, and a transistor provided in the pixel. The gate electrode of the transistor is connected to the scanning signal line, and the scanning signal line is connected to the second sensor electrode.

Effects of the Invention

[0008] According to one embodiment of the present invention, by having a switching circuit connected to a plurality of data signal lines, the first sensor electrodes can be arranged at a high density, and even in that case, an increase in the number of connection terminals can be suppressed. As a result, connection failures with the flexible circuit board at the terminal portion can be reduced. According to one embodiment of the present invention, by connecting the scanning signal lines to the second sensor electrodes, the scanning signal lines can be used in combination as auxiliary electrodes of the second sensor electrodes.

Brief Description of the Drawings

[0009]

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Mode for Carrying Out the Invention

[0010] Hereinafter, embodiments of the present invention will be described with reference to the drawings and the like. However, the present invention includes many different aspects and is not to be construed as limited to the embodiments illustrated below. The drawings attached to this specification are schematically represented in terms of the width, thickness, shape, etc. of each part compared to the actual aspect in order to make the description clearer, but this is merely an example and does not necessarily limit the content of the present invention. Further, in the present invention, when a specific element described in one drawing and a specific element described in another drawing are in the same or corresponding relationship, the same reference numeral (or a reference numeral with a, b, etc. appended after the numeral described as a reference numeral) may be attached, and repeated explanations may be appropriately omitted. Furthermore, the letters "first" and "second" appended to each element are convenient identifiers used to distinguish each element and have no further meaning unless otherwise specified.

[0011] In this specification, when it is said that a certain member or region is "above (or below)" another member or region, unless otherwise specifically limited, this includes not only the case where it is directly above (or directly below) the other member or region but also the case where it is above (or below) the other member or region. That is, it also includes the case where another component is included between a certain member or region and the other member or region above (or below) the other member or region.

[0012] [First Embodiment] This embodiment shows an example of a display device in which a display unit and a touch and fingerprint sensor unit are arranged in an overlapping manner.

[0013] 1-1. Configuration of a Display Device with a Touch and Fingerprint Sensor FIG. 1 shows an exploded view of a display device 100 with a touch and fingerprint sensor according to an embodiment of the present invention. The display device 100 with a touch and fingerprint sensor includes a display unit 102 in which a plurality of pixels 104 are arranged, and a touch and fingerprint sensor unit 110 including at least one first sensor electrode 112 and at least one second sensor electrode 114. A shield electrode 116 is arranged between the display unit 102 and the touch and fingerprint sensor unit 110.

[0014] At least one first sensor electrode 112 is arranged to extend in the Y direction, and at least one second sensor electrode 114 is arranged to extend in the X direction. At least one first sensor electrode 112 is composed of a plurality of first sensor electrodes (hereinafter, the same reference numeral "112" is given in the same manner), and the plurality of first sensor electrodes 112 are arranged in the X direction. At least one second sensor electrode 114 is composed of a plurality of second sensor electrodes (hereinafter, the same reference numeral "114" is given in the same manner), and the plurality of second sensor electrodes 114 are arranged in the Y direction. The plurality of first sensor electrodes 112 and the plurality of second sensor electrodes 114 are arranged to intersect with each other with an insulating layer (not shown) interposed therebetween.

[0015] In the region outside the display unit 102, a first drive circuit 118, a switching circuit 120 (also referred to as a "multiplex circuit" or "demultiplexer"), and a terminal unit 122 are provided. The shield electrode 116 is provided to electrically separate the display unit 102 and the touch and fingerprint sensor unit 110. A constant potential (for example, a ground potential) is applied to the shield electrode 116.

[0016] Each of the plurality of pixels 104 includes a light-emitting element. As the light-emitting element, for example, an electroluminescence element (hereinafter also referred to as an "EL element") is used. The EL element provided in each of the plurality of pixels 104 is of a bottom emission type that emits light toward the side of the shield electrode 116. The first sensor electrode 112, the second sensor electrode 114, and the shield electrode 116 have translucency. The first sensor electrode 112, the second sensor electrode 114, and the shield electrode 116 are formed of a transparent conductive film. Alternatively, the first sensor electrode 112, the second sensor electrode 114, and the shield electrode 116 may be provided with openings according to the arrangement of the plurality of pixels 104. With such a configuration, the light emission of the EL element is emitted through the shield electrode 116 and the touch and fingerprint sensor unit 110.

[0017] The display device 100 with a touch and fingerprint sensor has a configuration in which an image displayed on the display unit 102 is visually recognized from the side where the touch and fingerprint sensor unit 110 is provided. Since the touch and fingerprint sensor unit 110 is provided so as to overlap the display unit 102, the display device 100 with a touch and fingerprint sensor can detect touch and fingerprints at any position on the display screen.

[0018] A sealing layer 124 may be provided on the display unit 102. The sealing layer 124 is provided to protect the display unit 102, the first drive circuit 118, and the switching circuit 120. The configuration of the sealing layer 124 is arbitrary. For example, the sealing layer 124 is formed of an inorganic insulating film such as a silicon oxide film or a silicon nitride film. Also, the sealing layer 124 may be formed using a resin material such as a polyimide resin, an acrylic resin, or an epoxy resin.

[0019] FIG. 2 shows a display unit 102, a touch and fingerprint sensor unit 110, a first drive circuit 118, a switching circuit 120, a terminal unit 122, and a second drive circuit 128 of the display device 100 with a touch and fingerprint sensor according to the present embodiment. The display unit 102, the touch and fingerprint sensor unit 110, the first drive circuit 118, the switching circuit 120, and the terminal unit 122 are provided on a transparent resin substrate 200. The second drive circuit 128 is provided on a flexible circuit board 126. The second drive circuit 128 is mounted on the flexible circuit board 126 by a COF (Chip on Film).

[0020] The display unit 102 includes a plurality of pixels 104. The plurality of pixels 104 are arranged in an array such as, for example, a stripe array, a delta array, a Bayer array, a pentile array, a diamond pentile array, etc. The display unit 102 is provided with data signal lines 108 and scanning signal lines (not shown). For the plurality of pixels 104 arranged in the first direction (column direction) and the second direction (row direction), the data signal lines 108 extend in the first direction (column direction), and the scanning signal lines are arranged to extend in the second direction (row direction) intersecting the first direction.

[0021] The first drive circuit 118 is arranged in an area outside the display unit 102 (hereinafter, also referred to as the "peripheral area"). The first drive circuit 118 is connected to scanning signal lines (not shown). The first drive circuit 118 is arranged along one side of the display unit 102. A plurality of data signal lines 108 (not shown) are arranged in the first direction (column direction) and are connected to the switching circuit 120.

[0022] A terminal unit 122 having a plurality of connection terminals arranged at one end of the transparent resin substrate 200 is provided. The switching circuit 120 is arranged in the area between the display unit 102 and the terminal unit 122. The switching circuit 120 has a function of distributing one input to a plurality of outputs. The switching circuit 120 connects one connection terminal provided in the terminal unit 122 and the plurality of data signal lines 108.

[0023] The touch and fingerprint sensor unit 110 includes a plurality of first sensor electrodes 112 extending in a first direction (column direction) and a plurality of second sensor electrodes 114 extending in a second direction (row direction). Each of the plurality of first sensor electrodes 112 is connected to a connection terminal disposed at the terminal portion 122. The plurality of second sensor electrodes 114 are connected to the first drive circuit 118. The plurality of first sensor electrodes 112 and the plurality of second sensor electrodes 114 are arranged to intersect with each other with an insulating layer (not shown) interposed therebetween, and function as a fingerprint sensor and a touch sensor.

[0024] The flexible circuit board 126 includes wirings connecting the first drive circuit 118, the switching circuit 120, and the first sensor electrodes 112 and the second drive circuit 128. The flexible circuit board 126 is connected to the connection terminals of the terminal portion 122 via an anisotropic conductive material. The scan signal line drive circuit block 130 of the second drive circuit 128 is connected to the first drive circuit 118, the data signal line drive circuit block 132 is connected to the switching circuit 120, and the touch and fingerprint sensor detection circuit block 134 is connected to the first sensor electrodes 112.

[0025] In the second drive circuit 128, the scan signal line drive circuit block 130 has a function of outputting a signal for driving the first drive circuit 118 that outputs a scan signal of the display unit 102 and a scan signal of the touch and fingerprint sensor unit 110, the data signal line drive circuit block 132 has a function of outputting a video signal, and the touch and fingerprint sensor detection circuit block 134 has a function of amplifying a sensing signal output from the first sensor electrodes 112 and generating a digital signal as a sensor output.

[0026] FIG. 2 shows an example in which the second drive circuit 128 is provided as a complex integrated circuit (complex IC) in which a plurality of circuit blocks are integrated on one semiconductor chip. By using such a complex integrated circuit, the number of manufacturing steps can be reduced and the manufacturing cost can be reduced compared to the case of mounting individual IC chips. Note that the second drive circuit 128 is not limited to this example, and a configuration in which each circuit block is realized by an individual integrated circuit may be used.

[0027] Figures 3A and 3B show the timing charts of the display device 100 with a touch and fingerprint sensor shown in Figure 2. In the display device 100 with a touch and fingerprint sensor, the first driving circuit 118 also serves as the scanning signal line driving circuit of the display unit 102 and the scan signal output circuit of the touch and fingerprint sensor unit 110. Therefore, the display device 100 with a touch and fingerprint sensor is driven such that a display period and a sensing period appear alternately.

[0028] Figure 3A shows an example in which a sensing period appears for each display period of one frame. Figure 3B shows an example in which a sensing period appears at a ratio of once per two-frame display period. The length of the sensing period is arbitrary and can be set shorter than one frame period. Since the frame frequency is 60 Hz or higher, even if a sensing period is provided between frames, it is possible to perform touch or fingerprint sensing while displaying an image without visually affecting the display unit 102.

[0029] 1-2. Equivalent Circuit of Pixel Figure 4 shows an example of the equivalent circuit of the pixel 104. The pixel 104 includes a first sub-pixel 105r, a second sub-pixel 105g, and a third sub-pixel 105b. The first sub-pixel 105r includes a driving transistor 136, a selection transistor 138, a capacitive element 140, and an EL element 142. The second sub-pixel 105g and the third sub-pixel 105b also have the same configuration. In Figure 4, the symbols indicating the driving transistor 136 and the selection transistor 138 show a dual-gate structure in which a semiconductor layer is sandwiched between two gate electrodes. The driving transistor 136 has a lower first gate electrode 150 and an upper second gate electrode 151, and the selection transistor 138 has a lower first gate electrode 152 and an upper second gate electrode 153. The driving transistor 136 and the selection transistor 138 are n-channel type transistors.

[0030] The second gate electrode 153 of the selection transistor 138 is connected to the scanning signal line 106a, with its source side connected to the data signal line 108 and its drain side connected to the capacitor element 140 and the second gate electrode 151 of the driving transistor 136. The first gate electrode 150 of the driving transistor 136 is connected to the common wiring 144b, with its source side connected to the common electrode 144a and its drain side connected to the cathode of the EL element 142. One terminal (the first terminal) of the capacitor element 140 is connected to the drain side of the selection transistor 138, and the other terminal is connected to the common wiring 144b. The anode of the EL element 142 is connected to the power supply line 154.

[0031] In FIG. 4, the common electrode 144a and the common wiring 144b are shown separately in the equivalent circuit, but they are at the same potential and are functionally the same in that they are fixed at a certain potential (for example, the ground potential). The power supply line 154 is supplied with a power supply potential VDD that is higher than the potential of the common electrode 144a and the common wiring 144b. When the driving transistor 136 is in the on state, a current flows from the power supply line 154 to the common electrode 144a through the EL element 142. The current flowing at this time is also the drain current of the driving transistor 136, and it is possible to control the amount of current (which is also the light emission intensity of the EL element) according to the potential of the second gate electrode 151.

[0032] Note that the equivalent circuit of the pixel shown in FIG. 4 is an example, and the touch and fingerprint sensor - equipped display device 100 according to the present embodiment can also apply pixel circuits having other circuit configurations. For example, a pixel circuit in which a circuit for correcting the threshold voltage of the driving transistor is incorporated can be applied.

[0033] 1 - 3. Switching Circuit FIG. 5 shows the configuration of the switching circuit 120 (120_1 to 120_h), the terminal portion 122, and the second driving circuit 128 of the touch and fingerprint sensor - equipped display device 100 according to the present embodiment. The switching circuit 120 (120_1 to 120_h) and the terminal portion 122 are provided on the transparent resin substrate 200. The second driving circuit 128 is mounted on the flexible circuit board 126.

[0034] The terminal portion 122 includes a first connection terminal 146a and a second connection terminal 146b. The first connection terminal 146a is a terminal connected to the switching circuit 120 (120_1 to 120_h), and the second connection terminal 146b is a terminal connected to the first sensor electrode 112 (112_1 to 112_k). The flexible circuit board 126 includes a third connection terminal 148a and a fourth connection terminal 148b. The first connection terminal 146a is connected to the third connection terminal 148a, and the second connection terminal 146b is connected to the fourth connection terminal 148b. The connection terminals provided on the transparent resin substrate 200 side and the connection terminals provided on the flexible circuit board 126 side are connected by an anisotropic conductive adhesive material.

[0035] The switching circuit 120 (120_1 to 120_h) includes one input terminal and three output terminals. The switching circuit 120 (120_1 to 120_h) includes a first switching element 156a, a second switching element 156b, and a third switching element 156c provided between the input terminal and the output terminals. The first switching element 156a, the second switching element 156b, and the third switching element 156c are formed of transistors. The first switching element 156a, the second switching element 156b, and the third switching element 156c are controlled to be turned on and off by control signal lines 157a, 157b, 157c connected to the gates of the transistors.

[0036] The first switching circuit 120_1 includes the first switching element 156a, the second switching element 156b, and the third switching element 156c, and switches exclusively according to the control signals of the control signal lines 157a, 157b, 157c. That is, the first switching element 156a is controlled by the control signal of the control signal line 157a, the second switching element 156b is controlled by the control signal of the control signal line 157b, and the third switching element 156c is controlled by the control signal of the control signal line 157c, so that any one of these switching elements is turned on and the other two switching elements are turned off. Such an operation is the same for the other switching circuits 120_2 to 120_h.

[0037] The first switching circuit 120_1 has a first connection terminal 146a connected to its input end and a plurality of data signal lines 108 (S1 to S3) connected to its output end. Specifically, in the first switching circuit 120_1, a first switching element 156a is connected between the first connection terminal 146a and the data signal line 108 (S1), a second switching element 156b is connected between the first connection terminal 146a and the data signal line 108 (S2), and a third switching element 156c is connected between the first connection terminal 146a and the data signal line 108 (S3). The other switching circuits 120_2 to 120_h have the same circuit configuration. The first switching circuit 120_1 has a function of distributing the signal input to the first connection terminal 146a to the plurality of data signal lines 108 (S1 to S3) by the switching operations of the first switching element 156a, the second switching element 156b, and the third switching element 156c. The other switching circuits 120_2 to 120_h also have the same function.

[0038] A first sensor electrode 112_1 is disposed between the first switching circuit 120_1 and the second switching circuit 120_2. The first sensor electrode 112_1 is connected to the second connection terminal 146b. Similarly, the other first sensor electrodes 112_2 to 112_k are also disposed between the other switching circuits 120_2 to 120_h.

[0039] The shield electrode 116 is provided so as to overlap with the region of the terminal portion 122. The end portion of the shield electrode 116 is located outside the first connection terminal 146a and the second connection terminal 146b. The first connection terminal 146a and the second connection terminal 146b are provided on the upper layer side of the shield electrode 116 with an insulating layer (not shown) interposed therebetween. By providing the first connection terminal 146a and the second connection terminal 146b on the upper side of the shield electrode 116, they can withstand the crimping process when connecting the flexible circuit board 126, and can prevent sinking, deformation, and peeling. Also, by providing the first connection terminal 146a and the second connection terminal 146b on the upper side of the shield electrode 116, it is possible to prevent video signals from propagating as noise to the touch and fingerprint sensor unit 110.

[0040] The first sensor electrodes 112_1 to 112_k are provided on the lower layer side of the shield electrode 116 with an insulating layer (not shown) interposed therebetween. In order to connect the first sensor electrode 112_1 and a wiring extending from the second connection terminal 146b, a first opening 158 is provided in the shield electrode 116, and a first contact hole 159 penetrating the insulating layer (not shown) is provided inside the first opening 158. The first sensor electrode 112_1 and the second connection terminal 146b are connected by the first contact hole 159 having a hole diameter smaller than the diameter of the first opening 158.

[0041] The second drive circuit 128 includes a data signal line drive circuit block 132 and a touch and fingerprint sensor detection circuit block 134 (further including a scan signal line drive circuit block 130 not shown). The data signal line drive circuit block 132 includes a circuit that controls the operation of the switching circuits 120 (120_1 to 120_h). In the second drive circuit 128, the arrangement of each circuit block is arbitrary, and the arrangement of the data signal line drive circuit block 132 and the touch and fingerprint sensor detection circuit block 134 may be interchanged with the illustrated arrangement.

[0042] In the terminal portion where the connection terminals are arranged, if all of the plurality of data signal lines and the plurality of first sensor electrodes are to be separately and independently connected by individual connection terminals, the pitch of the connection terminals becomes small. Generally, when the pitch of the connection terminals provided in the terminal portion becomes small, it becomes difficult to connect to the flexible circuit board, defects occur, and the manufacturing yield decreases, which is a problem.

[0043] In contrast, in the touch and fingerprint sensor-equipped display device 100 according to the present embodiment, the number of connection terminals is reduced by providing a switching circuit 120 (120_1 to 120_h). That is, by providing the switching circuit 120, it becomes possible to connect a plurality of data signal lines 108 (for example, S1 to S3) to one first connection terminal 146a, and the number of connection terminals is reduced. As a result, even if a second connection terminal 146b connected to the first sensor electrode 112 is added to the terminal portion 122, a simple increase in the number of connection terminals is prevented, and the narrow pitch of the connection terminals can be prevented. As a result, a connection failure with the flexible circuit board 126 can be prevented.

[0044] FIG. 6 shows an example in which the first switching element 156a, the second switching element 156b, and the third switching element 156c constituting the switching circuit 120 (120_1 to 120_h) are configured by dual-gate transistors. By using dual-gate transistors as the first switching element 156a, the second switching element 156b, and the third switching element 156c, the rise and fall of switching become steep, and the switching circuit 120 (120_1 to 120_h) can operate even when the drive frequency is increased. As a result, even when the frame frequency of the touch and fingerprint sensor-equipped display device 100 becomes high, the switching circuit 120 (120_1 to 120_h) can be operated in synchronization with the frame frequency. Further, by using dual-gate transistors as the first switching element 156a, the second switching element 156b, and the third switching element 156c, the off-current (leakage current when the switch is off) can be reduced, a reliable switching operation can be performed, and the power consumption can be reduced.

[0045] FIG. 7 shows an example in which the end portion of the shield electrode 116 is disposed inside the terminal portion 122. The end portion of the shield electrode 116 is disposed in a region between the terminal portion 122 and the first opening 158, and the first connection terminal 146a and the second connection terminal 146b are disposed outside the shield electrode 116. According to such a structure, the parasitic capacitance between the first connection terminal 146a and the second connection terminal 146b and the shield electrode 116 can be reduced, and the power consumption can be reduced. In FIG. 7, the configuration other than the shield electrode 116 is the same as that shown in FIG. 5.

[0046] FIG. 5 shows a configuration when one first sensor electrode 112 is provided for an array of one row of pixels 104. When the sensitivity as a fingerprint sensor can be tolerated even if it decreases to some extent, it is also possible to reduce the number of the first sensor electrodes 112. For example, one first sensor electrode 112 may be provided for an array of two rows of pixels 104. FIG. 8 shows the switching circuit 120 and the arrangement of the first sensor electrodes 112 in this case. As shown in FIG. 8, even when the number of the first sensor electrodes 112 is reduced, the switching circuit 120 can be arranged, and the pitch of the connection terminals of the terminal portion 122 can be increased.

[0047] In FIGS. 5, 6, 7, and 8, the pitches of the connection terminals of the terminal portion 122 are not uniformly arranged. However, in order to further improve the yield of the process of connecting the terminal portion 122 and the flexible circuit board 126, it is preferable to uniformly arrange the pitches of the connection terminals.

[0048] 1-4. Structure of Sensor Electrode 1-4-1. First Sensor Electrode FIG. 9 shows the arrangement of a plurality of pixels 104 and the arrangement of a plurality of first sensor electrodes 112 and a plurality of second sensor electrodes 114. FIG. 9 shows an example in which a plurality of pixels 104 include a first sub-pixel 105r corresponding to red (R), a second sub-pixel 105g corresponding to green (G), and a third sub-pixel 105b corresponding to blue (B), and the sub-pixels corresponding to each color are arranged in a stripe pattern in the first direction (column direction). The first sensor electrodes 112 extending in the first direction (column direction) are arranged corresponding to the arrangement of the plurality of pixels 104 in the first direction (column direction), and the second sensor electrodes 114 extending in the second direction (row direction) are also arranged corresponding to the arrangement of the plurality of pixels 104 in the second direction (row direction).

[0049] In order to detect a fingerprint, the first sensor electrodes 112 need to be provided with a pitch of 25 μm to 120 μm, and a pitch range of 45 μm to 75 μm is most suitable. The second sensor electrodes 114 also need to be provided with a similar pitch. If the pitch of the first sensor electrodes 112 and the second sensor electrodes 114 is too large, the resolution will decrease and the fingerprint cannot be accurately detected. On the other hand, even if the pitch is made less than 25 μm, there is no improvement in the fingerprint detection accuracy, and only the number of sensor electrodes increases and it becomes over-specification.

[0050] Although not shown in FIG. 9, the data signal lines are provided corresponding to the arrangement in the first direction (column direction) of the first sub-pixels 105r, the second sub-pixels 105g, and the third sub-pixels 105b. Therefore, the first sensor electrodes 112 are provided at a ratio of one for every three data signal lines. The pitch of the data signal lines corresponding to the first sub-pixels 105r, the second sub-pixels 105g, and the third sub-pixels 105b is, for example, 17 μm in the case of a display panel of a 5.5-inch full high-definition compatible smartphone. Therefore, when the first sensor electrodes 112 are arranged corresponding to the column direction of each pixel 104, the pitch of the first sensor electrodes 112 becomes 51 μm. In this case, referring to FIGS. 5, 6, and 7, since the first connection terminals 146a are arranged at a pitch of 51 μm and the second connection terminals 146b are arranged therebetween, the pitch of the connection terminals in the terminal portion 122 becomes 25.5 μm. Regarding the second sensor electrodes 114, the pitch of the scanning signal lines corresponding to the second direction (row direction) of the first sub-pixels 105r, the second sub-pixels 105g, and the third sub-pixels 105b is 51 μm, and the pitch of the second sensor electrodes 114 is also 51 μm in the same manner.

[0051] As a sensor for detecting fingerprints, it is considered that the pitch of the sensor electrodes needs to be about 50 μm from the viewpoint of resolution. When a certain degree of reduction in the sensitivity as a fingerprint sensor can be tolerated, the number of the first sensor electrodes 112 may be reduced. For example, the first sensor electrodes 112 may be arranged every other pixel. In that case, according to the above example, the pitch of the first sensor electrodes 112 becomes 102 μm, and it becomes possible to widen the pitch of the connection terminals in the terminal portion 122 to about 34 μm.

[0052] FIG. 10 shows an example in which the pitch of both sensor electrodes is increased with respect to the arrangement of the first sensor electrode 112 and the second sensor electrode 114 shown in FIG. 9. That is, FIG. 10 shows an example in which one first sensor electrode 112 is provided for a two-column arrangement in the column direction of the pixel 104, and one second sensor electrode 114 is provided for a two-row arrangement in the row direction. As described above, the pitch between the first sensor electrode 112 and the second sensor electrode 114 is about 100 μm, and even with such a pitch, fingerprints can be detected. With respect to the arrangement of the first sensor electrode 112 shown in FIG. 10, the arrangement of the connection terminals in the switching circuit 120 and the terminal portion 122 is as shown in FIG. 8, and the pitch of the connection terminals can be widened.

[0053] FIGS. 11A and 11B show an example of the first sensor electrode 112. FIG. 11A shows a plan view of the first sensor electrode 112, and FIG. 11B shows a cross-sectional view corresponding to between A1 - A2.

[0054] The first sensor electrode 112 has a stripe pattern extending along the first direction (column direction) in the display unit 102. The first sensor electrode 112 is formed of a first sensor electrode layer 204 having translucency. The first sensor electrode layer 204 is, for example, indium tin oxide (ITO), zinc oxide (ZnO) doped with aluminum (Al) or gallium (Ga), indium zinc oxide (IZO), tin oxide (SnO2), titanium oxide (TiO x ) doped with niobium (Nb), etc., a conductive metal oxide, titanium nitride (TiN x ), a metal nitride such as titanium oxynitride (TiON), or a conductive transparent conductive film such as a metal oxynitride, or a conductive organic substance such as polyaniline or graphene. The width W1 of the first sensor electrode 112 is provided to be wider than the width Wp of the sub-pixel 105. Since the first sensor electrode layer 204 is arranged in accordance with the arrangement of the sub-pixels 105 in the first direction (column direction), the first sensor electrode 112 is provided to cover the entire sub-pixel 105.

[0055] A first auxiliary electrode 205a may be added to the first sensor electrode layer 204. The first auxiliary electrode 205a has a linear pattern along the upper edges on both sides of the stripe-shaped pattern of the first sensor electrode layer 204. Further, the first auxiliary electrode 205a may include a strip-shaped pattern that connects the linear patterns on both sides in a region where the sub-pixels 105 arranged in the first direction (column direction) are separated from each other. The first auxiliary electrode 205a is formed of a material with lower resistance than the transparent conductive film material forming the first sensor electrode layer 204. For example, the first auxiliary electrode 205a is a metal film such as aluminum (Al), a metal nitride such as titanium nitride (TiN), or a conductive material such as a metal silicide such as titanium silicide (TiSi x ). The first auxiliary electrode 205a formed of such a conductive material is formed with substantially the same width (thickness) as the data signal line 108 provided in the display unit 102 and is arranged at a position overlapping the data signal line 108. By providing the first auxiliary electrode 205a in contact with the first sensor electrode layer 204, the resistance of the first sensor electrode 112 can be reduced.

[0056] Since the width W1 of the first sensor electrode layer 204 is larger than the width Wp of the sub-pixel 105, the resistance of the first sensor electrode 112 can be reduced without decreasing the aperture ratio of the sub-pixel 105. For example, in the case of the display panel of the 5.5-inch full high-definition compatible smartphone exemplified above, the width of the first sensor electrode 112 can be made wider than 17 μm (51 μm / 3) and 20 μm. Further, the pitch L1 of the strip-shaped pattern of the first auxiliary electrode 205a is preferably larger than the length Lp of the sub-pixel 105. The pitch L1 of this strip-shaped pattern may be the same as the pitch of the scanning signal line. According to the above example, the pitch L1 may be 51 μm.

[0057] The width (thickness) of this strip-shaped pattern is formed to be substantially the same width (thickness) as the scanning signal line 106 and is arranged at a position overlapping the scanning signal line 106. By such an arrangement, it is possible to realize a reduction in the resistance of the first sensor electrode 112 without decreasing the aperture ratio.

[0058] By providing the first auxiliary electrode 205a on the first sensor electrode layer 204 in this way, it is possible to reduce the resistance of the first sensor electrode 112. As a result, it is possible to prevent a decrease in the sensitivity and a decrease in the response speed of the touch and fingerprint sensor unit 110.

[0059] FIGS. 12A and 12B show another example of the first sensor electrode 112. FIG. 12A shows a plan view of the first sensor electrode 112, and FIG. 12B shows a cross-sectional view corresponding to the B1-B2 interval.

[0060] The first auxiliary electrode 205b is provided in contact with the first sensor electrode layer 204. The first auxiliary electrode 205b has a shape in which a linear pattern provided in the central portion of the first sensor electrode layer 204 and a strip-shaped pattern provided in the region between the sub-pixels 105 are combined. The first auxiliary electrode 205b is formed of a metal film, a metal nitride film, or a metal silicide film. The first auxiliary electrode 205b having the shape shown in FIGS. 12A and 12B is formed with substantially the same width (thickness) as the data signal line 108 of the display unit 102 and is arranged so as to overlap the data signal line 108. The strip-shaped pattern of the first auxiliary electrode 205b is formed with substantially the same width (thickness) as the scanning signal line 106 and is arranged so as to overlap the scanning signal line 106. Also with such a first auxiliary electrode 205b, it is possible to reduce the resistance of the first sensor electrode 112.

[0061] 1-4-2. Second Sensor Electrode FIG. 13A shows a plan view of the second sensor electrode 114. FIG. 13A further shows a part of the structure (the first gate electrode 152, the second oxide semiconductor layer 180b, the second gate electrode 153) of the selection transistor 138 provided on the second sensor electrode 114 by a dotted line. FIG. 13B shows a cross-sectional structure corresponding to the C1-C2 interval shown in FIG. 13A.

[0062] The second sensor electrode 114 has a stripe pattern extending along the second direction (row direction) in the display unit 102. The second sensor electrode 114 traverses the display unit 102 along the second direction (row direction) and is provided so that both ends reach the peripheral region. The second sensor electrode 114 is formed of a second sensor electrode layer 206 having translucency. The second sensor electrode layer 206 is formed of a transparent conductive film in the same manner as the first sensor electrode layer 204.

[0063] The second sensor electrode 114 is provided with a second auxiliary electrode 207. The second auxiliary electrode 207 is provided in contact with the second sensor electrode layer 206. The second auxiliary electrode 207 is provided along the longitudinal direction of the second sensor electrode layer 206. The second auxiliary electrode 207 is formed of a metal film, a metal nitride film, or a metal silicide film. Similar to the first sensor electrode 112, the second sensor electrode 114 is also formed of the second sensor electrode layer 206 and the second auxiliary electrode 207 to achieve low resistance.

[0064] FIG. 13B shows a structure in which a first transparent resin layer 202a, a second transparent resin layer 202b, a third transparent resin layer 202c, a fourth transparent resin layer 202d, a first insulating layer 210, and a second insulating layer 212 are laminated as the transparent resin substrate 200. The second sensor electrode layer 206 is provided between the second transparent resin layer 202b and the third transparent resin layer 202c. The second auxiliary electrode 207 is provided between the second sensor electrode layer 206 and the third transparent resin layer 202c. The shield electrode 116 is provided on the third transparent resin layer 202c. A fourth transparent resin layer 202d is provided on the shield electrode 116. A first insulating layer 210 is provided on the fourth transparent resin layer 202d. Further, a second oxide semiconductor layer 180b is provided between the first insulating layer 210 and the second insulating layer 212, and a second gate electrode 153 is provided on the second insulating layer 212.

[0065] A second light-shielding layer 208b is provided on the lower layer side of the first gate electrode 152. The second light-shielding layer 208b is formed of a conductive film continuous from the second auxiliary electrode 207. In other words, as shown in FIG. 13A, the linear pattern of the second auxiliary electrode 207 extending in the second direction (row direction) has a pattern that protrudes convexly in the region where the selection transistor 138 is provided. The second auxiliary electrode 207 having such a pattern functions as the second light-shielding layer 208b for the sub-pixel 105. Note that the shape of the second light-shielding layer 208b protruding from the second auxiliary electrode 207 in plan view is arbitrary and is not limited to the shape shown in FIG. 13A.

[0066] The second auxiliary electrode 207 also functions as a scanning signal line (gate bus line) 106 of the display unit 102. The second gate electrode 153 is provided on the second insulating layer 212. The second gate electrodes 153 are separated for each sub-pixel 105 and provided individually. The second gate electrode 153 is connected to the second auxiliary electrode 207 through a third contact hole 163 that penetrates the second insulating layer 212, the first insulating layer 210, the fourth transparent resin layer 202d, and the third transparent resin layer 202c. The shield electrode 116 disposed between the third transparent resin layer 202c and the fourth transparent resin layer 202d is provided with a third opening 162 having a diameter d1 larger than the diameter d2 of the third contact hole 163. The third contact hole 163 is provided so as to penetrate the region inside the third opening 162.

[0067] The first gate electrode 152 is provided in a state of being connected on the shield electrode 116. The first gate electrode 152 is fixed to the same potential as the shield electrode 116. The electrical characteristic variation of the selection transistor 138 is suppressed by providing the first gate electrode 152 to which a constant potential is applied on the opposite side (back channel side) of the second gate electrode 153.

[0068] In the structures shown in FIGS. 13A and 13B, since the scanning signal line 106 is disposed on the lower layer side of the second oxide semiconductor layer 180b, the film thickness of the second insulating layer 212 can be reduced to about 100 nm to 200 nm. Since the second gate electrode 153 does not intersect the data signal line 108, even if the film thickness of the second insulating layer 212 is reduced, the two will not short-circuit. By thinning the second insulating layer 212 that functions as a gate insulating layer, a selection transistor 138 with excellent switching characteristics and a high response speed can be obtained.

[0069] Note that FIG. 13A shows only the selection transistor 138, and the driving transistor 136 is omitted. However, a light-shielding layer can be similarly provided for the driving transistor 136 using the metal layer forming the second auxiliary electrode 207.

[0070] FIGS. 14A and 14B show a mode in which the second sensor electrode 114 is different from the structures shown in FIGS. 13A and 13B. FIG. 14A shows a plan view of the second sensor electrode 114. FIG. 14A further shows a partial structure (the first gate electrode 152, the second oxide semiconductor layer 180b, the second gate electrode 153, the scanning signal line 106) of the selection transistor 138 provided on the second sensor electrode 114. FIG. 14B shows a cross-sectional structure corresponding to the C3-C4 section shown in FIG. 14A, and FIG. 14C shows a cross-sectional structure corresponding to the C5-C6 section shown in FIG. 14A.

[0071] The second sensor electrode 114 is formed of a second sensor electrode layer 206 and a second auxiliary electrode 207. The second auxiliary electrode 207 has a linear pattern extending along the longitudinal direction of the second sensor electrode 114 in the display unit 102. On the second sensor electrode 114, a second light-shielding layer 208b overlapping the second oxide semiconductor layer 180b is provided by a metal film forming the second auxiliary electrode 207.

[0072] The second gate electrode 153 and the scanning signal line 106 are provided on the second insulating layer 212. The second gate electrode 153 is formed of a pattern continuous from the scanning signal line 106. That is, the second gate electrode 153 and the scanning signal line 106 are formed of the same conductive layer. The second gate electrode 153 is provided in a state of being connected by the scanning signal line 106 for each row of the sub-pixels 105.

[0073] The scanning signal line 106 is connected to the second auxiliary electrode 207 in the peripheral region. A fourth opening 164 is provided in the shield electrode 116 in the peripheral region. The scanning signal line 106 is provided inside the fourth opening 164 and is connected to the second auxiliary electrode 207 by a fourth contact hole 165 having a hole diameter smaller than the diameter of the fourth opening 164. The second light-shielding layer 208b may be separated from the second auxiliary electrode 207 as shown in the figure, or may be provided so as to be continuous from the second auxiliary electrode 207 as shown in FIG. 13B.

[0074] In this way, by connecting the scanning signal line 106 to the second auxiliary electrode 207 in the peripheral region, the wiring resistance can be reduced. In other words, the second auxiliary electrode 207 can be used as an auxiliary wiring for the scanning signal line 106.

[0075] Note that FIGS. 14A and 14C show only the selection transistor 138 and the drive transistor 136 is omitted. The drive transistor 136 has the same structure as the selection transistor 138, and the second light-shielding layer 208b may be provided using the metal film forming the second auxiliary electrode 207.

[0076] 1-5. Sub-structures of pixels and sensors FIG. 15 shows an example of the planar layout of the sub-pixel 105 (corresponding to each of the first sub-pixel 105r, the second sub-pixel 105g, and the third sub-pixel 105b) shown in the equivalent circuit of FIG. 4. In FIG. 15, the details of the stacked structures of the first sensor electrode 112, the second sensor electrode 114, and the EL element 142 are omitted.

[0077] As shown in FIG. 15, the sub-pixel 105 includes a driving transistor 136, a selection transistor 138, a capacitive element 140, and an EL element 142. In the region of the sub-pixel 105, a scanning signal line 106a, a data signal line 108, a common electrode 144a, and a common wiring 144b are provided. The driving transistor 136 has a structure in which a first gate electrode 150 (lower layer side) and a second gate electrode 151 (upper layer side) are provided with a first oxide semiconductor layer 180a interposed therebetween. The selection transistor 138 has a structure in which a first gate electrode 152 (lower layer side) and a second gate electrode 153 (upper layer side) are provided with a second oxide semiconductor layer 180b interposed therebetween. A first light-shielding layer 208a is provided on the lower layer side of the driving transistor 136, and a second light-shielding layer 208b is provided on the lower layer side of the selection transistor 138. The first light-shielding layer 208a and the second light-shielding layer 208b are formed of the same conductive layer as the conductive layer forming the scanning signal line 106a. The first light-shielding layer 208a and the second light-shielding layer 208b are formed in a pattern continuous from the scanning signal line 106a.

[0078] The driving transistor 136 includes a first oxide semiconductor layer 180a, a first metal oxide conductive layer 176a, and a second metal oxide conductive layer 176b. The first metal oxide conductive layer 176a and the second metal oxide conductive layer 176b are provided so as to be in contact with the first oxide semiconductor layer 180a. The first metal oxide conductive layer 176a and the second metal oxide conductive layer 176b include regions in which the ends are spaced apart and opposed to each other. The ends and the spaced-apart regions are arranged at positions overlapping the first gate electrode 150, the second gate electrode 151, and the first oxide semiconductor layer 180a. The channel of the driving transistor 136 is formed in a portion where the first metal oxide conductive layer 176a and the second metal oxide conductive layer 176b are spaced apart.

[0079] The first metal oxide conductive layer 176a is provided in contact with the source wiring 170. The source wiring 170 is connected to the common electrode 144a via a fifth contact hole 166. The second metal oxide conductive layer 176b is formed in contact with a first electrode 220 forming the EL element 142. The second metal oxide conductive layer 176b and the first electrode 220 are provided in a continuous pattern.

[0080] The second metal oxide conductive layer 176b extends into the region of the EL element 142 to form the first electrode (cathode) 220. The first oxide semiconductor layer 180a extends into the region of the EL element 142 to form the first electron transport layer 222a. The first electron transport layer 222a is provided so as to cover the first electrode 220.

[0081] The selection transistor 138 includes a second oxide semiconductor layer 180b, a third metal oxide conductive layer 176c, and a fourth metal oxide conductive layer 176d. The third metal oxide conductive layer 176c and the fourth metal oxide conductive layer 176d are provided so as to be in contact with the second oxide semiconductor layer 180b. The third metal oxide conductive layer 176c and the fourth metal oxide conductive layer 176d include regions where their ends are spaced apart and opposed to each other. The ends and the spaced-apart regions are arranged at positions overlapping with the first gate electrode 152, the second gate electrode 153, and the second oxide semiconductor layer 180b. The channel of the selection transistor 138 is formed in a portion where the third metal oxide conductive layer 176c and the fourth metal oxide conductive layer 176d are spaced apart from each other.

[0082] The third metal oxide conductive layer 176c is provided so as to include a region overlapping and in contact with the data signal line 108. The fourth metal oxide conductive layer 176d is provided so as to be in contact with the drain wiring 173. The fourth metal oxide conductive layer 176d and the drain wiring 173 are provided so as to extend into the region of the capacitor element 140.

[0083] The second gate electrode 153 of the selection transistor 138 is provided individually for each sub-pixel 105 and is connected to the scanning signal line 106a (207) through the third contact hole 163. The second gate electrode 151 of the driving transistor 136 is connected to the drain wiring 173 through the seventh contact hole 168.

[0084] The capacitor element 140 is formed in a region where the drain wiring 173 and the fourth metal oxide conductive layer 176d overlap with the common wiring 144b. An insulating layer is interposed between the drain wiring 173 and the fourth metal oxide conductive layer 176d and the common wiring 144b (not shown in FIG. 15).

[0085] FIG. 16A shows a cross-sectional structure of the sub-pixel 105 corresponding to the D1-D2 line shown in FIG. 15. FIG. 16B shows a cross-sectional structure of the sub-pixel 105 corresponding to the D3-D4 line shown in FIG. 15. FIG. 16A shows a cross-sectional structure of the driving transistor 136 and the EL element 142, and FIG. 16B shows a cross-sectional structure of the selection transistor 138 and the capacitor element 140.

[0086] The first sensor electrode 112 and the second sensor electrode 114 are provided on the transparent resin substrate 200. The driving transistor 136, the selection transistor 138, the capacitor element 140, and the EL element 142 are provided on the transparent resin substrate 200. The transparent resin substrate 200 has a structure in which a plurality of transparent resin layers are laminated. The transparent resin substrate 200 has a structure in which a first transparent resin layer 202a, a second transparent resin layer 202b, and a third transparent resin layer 202c are laminated. The first sensor electrode 112 is provided between the first transparent resin layer 202a and the second transparent resin layer 202b, and the second sensor electrode 114 is provided between the second transparent resin layer 202b and the third transparent resin layer 202c. The touch and fingerprint sensor unit 110 is provided in a state of being embedded in the transparent resin substrate 200.

[0087] In the display device 100 with a touch and fingerprint sensor according to the present embodiment, light emitted from the pixel 104 (specifically, the EL element 142 provided in each sub-pixel 105) is emitted from the transparent resin substrate 200 side. The first sensor electrode 112 and the second sensor electrode 114 disposed in the region overlapping the pixel 104 are formed of a transparent conductive film so that light emitted from the pixel 104 can pass through. Alternatively, an opening through which light passes may be provided in accordance with the arrangement of the first sensor electrode 112 and the second sensor electrode 114. That is, the first sensor electrode 112 and the second sensor electrode 114 may be formed of a metal film such as aluminum (Al) having a ladder-shaped pattern like the first auxiliary electrode 205a shown in FIGS. 11A and 11B, a metal nitride film such as titanium nitride (TiN), or a metal silicide film such as titanium silicide (TiSi x ) etc.

[0088] The first transparent resin layer 202a, the second transparent resin layer 202b, the third transparent resin layer 202c, and the fourth transparent resin layer 202d have a thickness of 3 μm to 20 μm, preferably 10 μm to 15 μm. The transparent resin substrate 200 has flexibility due to a structure in which transparent resin layers having such film thicknesses are laminated. In the touch and fingerprint sensor-equipped display device 100, the side of the transparent resin substrate 200 serves as the sensing and display surface. When the first sensor electrode 112 and the second sensor electrode 114 are used as electrodes for detecting fingerprints, it is preferable that the thickness of the first transparent resin layer 202a is thin. By providing the first transparent resin layer 202a and the second transparent resin layer 202b with a thickness of about 10 μm to 15 μm, high fingerprint detection sensitivity can be obtained. In order to form contact holes, the second transparent resin layer 202b, the third transparent resin layer 202c, and the fourth transparent resin layer 202d are preferably as thin as possible as long as pinholes are not generated. However, since there is a problem of an increase in parasitic capacitance, in practice, it is preferable to have a thickness of 3 μm to 5 μm. Since the first transparent resin layer 202a is a layer that forms the framework of the transparent resin substrate 200, it is preferable to have a thickness of about 20 μm to 50 μm.

[0089] On the second sensor electrode 114, a first light-shielding layer 208a that overlaps the driving transistor 136 and a second light-shielding layer 208b that overlaps the selection transistor 138 are provided. The first light-shielding layer 208a and the second light-shielding layer 208b are formed of a metal film, a metal nitride film, or a metal silicide film. The first light-shielding layer 208a and the second light-shielding layer 208b are provided in the same layer as the scanning signal line 106a (which is also the second auxiliary electrode 207) provided on the second sensor electrode 114 as shown in FIG. 15.

[0090] A shield electrode 116 is provided between the driving transistor 136, the selection transistor 138, the capacitive element 140, and the EL element 142, and the first sensor electrode 112 and the second sensor electrode 114. The shield electrode 116 is provided between the third transparent resin layer 202c and the fourth transparent resin layer 202d. The shield electrode 116 is provided over the entire display unit 102.

[0091] The shield electrode 116 is formed of a transparent conductive film. As the transparent conductive film, metal oxides having conductivity such as indium tin oxide (ITO), zinc oxide (ZnO), indium zinc oxide (IZO), tin oxide (SnO2), metal nitrides such as titanium nitride (TiNx) and titanium oxynitride (TiON), or conductive transparent conductive films such as metal oxynitrides, and organic substances having conductivity such as polyaniline and graphene are used. Further, in another form, the shield electrode 116 may be formed of a metal material such as aluminum, titanium, or copper, and may have a structure in which openings are provided so that light can pass through according to the arrangement of the pixels. A common electrode 144a and a common wiring 144b are provided in contact with the upper surface of the shield electrode 116. The common wiring 144b is provided so as to extend in the same direction as the direction in which the scanning signal line 106a extends. The common electrode 144a and the common wiring 144b are formed of a metal film such as aluminum (Al). The common electrode 144a, the common wiring 144b, and the shield electrode 116 are at the same potential and a constant potential is applied. For example, a ground potential is applied to the shield electrode 116, the common electrode 144a, and the common wiring 144b.

[0092] On the shield electrode 116, a first gate electrode 150 of the driving transistor 136 and a first gate electrode 152 of the selection transistor 138 are provided. The first gate electrode 150 and the first gate electrode 152 are formed in the same layer as the common electrode 144a and the common wiring 144b. The first gate electrode 150 and the first gate electrode 152 are formed of a metal film. The first gate electrode 150 and the first gate electrode 152 are provided in contact with the upper surface of the shield electrode 116. The same potential as that of the shield electrode 116 is applied to the first gate electrode 150 and the first gate electrode 152.

[0093] In the touch and fingerprint sensor unit 110, the first sensor electrode 112 is a receiver electrode (Rx electrode), and the second sensor electrode 114 functions as a transmitter electrode (Tx electrode). When the touch and fingerprint sensor unit 110 is driven, a rectangular pulse voltage is applied to the second sensor electrode 114. The electric field generated by the rectangular pulse voltage applied to the second sensor electrode 114 is shielded by the shield electrode 116. Due to the electric field shielding effect of the shield electrode 116, the display unit 102 and the touch and fingerprint sensor unit 110 can be driven without interfering with each other. The touch and fingerprint sensor unit 110 is excluded from the influence of noise associated with the driving of the display unit 102, and highly accurate fingerprint detection can be performed. Also, the display unit 102 can display an image in a stable state without being affected by the touch and fingerprint sensor unit 110.

[0094] A fourth transparent resin layer 202d is provided on the shield electrode 116. Since the first transparent resin layer 202a, the second transparent resin layer 202b, the third transparent resin layer 202c, and the fourth transparent resin layer 202d are formed by applying a resin composition, the unevenness caused by the first sensor electrode 112, the second sensor electrode 114, the first gate electrode 150, the first gate electrode 152, and the common electrode 144a and the common wiring 144b can be filled, and the surface of the fourth transparent resin layer 202d can be flattened.

[0095] As the resin materials for forming the first transparent resin layer 202a, the second transparent resin layer 202b, the third transparent resin layer 202c, and the fourth transparent resin layer 202d, transparent polyimide resin, transparent polyethylene naphthalate resin, transparent para - polyamide resin, etc. are used. Since transparent polyimide resin and transparent polyethylene naphthalate resin have inferior gas barrier properties compared to a glass substrate, even if a gas barrier film formed of a silicon nitride film or the like is provided, it may be acceptable. On the other hand, since transparent para - polyamide resin has transparency, heat resistance, and gas barrier properties, it can be suitably used as a material for forming the transparent resin substrate 200. The first transparent resin layer 202a, the second transparent resin layer 202b, the third transparent resin layer 202c, and the fourth transparent resin layer 202d may be formed of the same resin material, or some or all of the layers may be formed of different resin materials. For example, by using a transparent para - polyamide resin with high rigidity and high gas barrier properties for the fourth transparent resin layer 202d, the long - term reliability of the EL element 142 can be enhanced.

[0096] The transparent resin substrate 200 preferably has heat resistance in the range of 150°C to 400°C. When the maximum process temperature (heating temperature) when forming the driving transistor 136 and the selection transistor 138 is 250°C or lower, para - polyamide resin can be used as the resin material. By using para - polyamide resin, the transparent resin substrate 200 itself can be given gas barrier properties. On the other hand, when the maximum process temperature (heating temperature) when forming the driving transistor 136 and the selection transistor 138 is 250°C or higher, it is preferable to use transparent polyimide resin as the material for forming the transparent resin substrate 200 from the viewpoint of heat resistance.

[0097] In addition, for the transparent polyimide resin and the transparent para-based polyamide resin, nanocellulose fiber (CNF) may be mixed with the transparent polyimide resin and the transparent para-based polyamide resin. The transparent polyimide resin and the transparent para-based polyamide resin mixed with nanocellulose fiber (CNF) have the advantages of improved rigidity, suppressed shrinkage, and improved dimensional stability. In order to improve the heat resistance of the transparent resin substrate 200, nanocellulose fiber (CNF) may be mixed with at least one of the first transparent resin layer 202a, the second transparent resin layer 202b, the third transparent resin layer 202c, and the fourth transparent resin layer 202d. The mixing ratio of nanocellulose fiber (CNF) with respect to the transparent polyimide resin and the transparent para-based polyamide resin is preferably 1 wt% to 10 wt%.

[0098] The driving transistor 136 shown in FIG. 16A has a structure in which a first gate electrode 150, a first insulating layer 210, a first oxide semiconductor layer 180a, a second insulating layer 212, and a second gate electrode 151 are laminated. The first gate electrode 150 is disposed so as to overlap the first oxide semiconductor layer 180a with the first insulating layer 210 interposed therebetween, and the second gate electrode 151 is disposed so as to overlap the first oxide semiconductor layer 180a with the second insulating layer 212 interposed therebetween. The first gate electrode 150, the second gate electrode 151, and the first oxide semiconductor layer 180a have overlapping regions with each other, and a channel is formed in the overlapping region of the driving transistor 136. Note that in the driving transistor 136, the same potential as that of the shield electrode 116 is applied to the first gate electrode 150, and a voltage based on a data signal (a voltage based on a video signal) is applied to the second gate electrode 151.

[0099] The first metal oxide conductive layer 176a and the second metal oxide conductive layer 176b are disposed between the first insulating layer 210 and the first oxide semiconductor layer 180a. The first metal oxide conductive layer 176a and the second metal oxide conductive layer 176b are arranged so as to sandwich the first gate electrode 150 and the second gate electrode 151 from both sides in plan view. The first metal oxide conductive layer 176a and the second metal oxide conductive layer 176b are provided so as to be in contact with the lower surface of the first oxide semiconductor layer 180a. In the driving transistor 136, the region where the second metal oxide conductive layer 176b is in contact with the first oxide semiconductor layer 180a serves as the drain region, and the region where the first metal oxide conductive layer 176a is in contact with the first oxide semiconductor layer 180a serves as the source region.

[0100] The first oxide semiconductor layer 180a is formed using a metal oxide semiconductor material. As the metal oxide semiconductor material, a quaternary metal oxide material, a ternary metal oxide material, a binary metal oxide material, and a monovalent metal oxide semiconductor material are used. These metal oxide semiconductor materials may have a single-layer structure or may have a laminated structure. Further, the metal oxide semiconductor material may be amorphous or may have crystallinity.

[0101] As the quaternary oxide material, In2O3-Ga2O3-SnO2-ZnO-based oxide materials can be used, and as the ternary oxide materials, In2O3-Ga2O3-SnO2-based oxide materials, In2O3-Ga2O3-ZnO-based oxide materials, In2O3-SnO2-ZnO-based oxide materials, In2O3-Al2O3-ZnO-based oxide materials, Ga2O3-SnO2-ZnO-based oxide materials, Ga2O3-Al2O3-ZnO-based oxide materials, SnO2-Al2O3-ZnO-based oxide materials can be used. As the binary oxide materials, In2O3-ZnO-based oxide materials, SnO2-ZnO-based oxide materials, Al2O3-ZnO-based oxide materials, MgO-ZnO-based oxide materials, SnO2-MgO-based oxide materials, In2O3-MgO-based oxide materials can be used. As the single-component oxide materials, In2O3-based metal oxide materials, SnO2-based metal oxide materials, ZnO-based metal oxide materials, etc. can be used. Further, silicon (Si), nickel (Ni), tungsten (W), hafnium (Hf), titanium (Ti), tantalum (Ta) may be contained in the above oxide semiconductor. Note that, for example, the In-Ga-Zn-O-based oxide material shown above is an oxide material containing at least In, Ga, and Zn, and its composition ratio is not particularly limited. Note that the above quaternary oxide material, ternary oxide material, binary oxide material, and single-component oxide material are not limited to those having a stoichiometric composition of the contained oxides, and may be composed of oxide materials having a composition deviated from the stoichiometric composition. Such a metal oxide semiconductor material has a band gap of 3.0 eV or more and is transparent to light in the visible light band.

[0102] The first metal oxide conductive layer 176a and the second metal oxide conductive layer 176b are formed using a conductive metal oxide material, a metal nitride material, or a metal oxynitride material. As the conductive metal oxide material, for example, indium tin oxide (ITO), zinc oxide (ZnO), indium zinc oxide (IZO), tin oxide (SnO2), titanium oxide added with niobium (TiNbO x ) etc. are used. Also, metal nitrides and metal oxynitrides having transparency and conductivity such as titanium nitride (TiN x ) and titanium oxynitride (TiON) can also be used.

[0103] The source electrode (first metal oxide conductive layer 176a) of the drive transistor 136 is connected to the common electrode 144a. The first metal oxide conductive layer 176a is provided so as to be in contact with the common electrode 144a via the fifth contact hole 166. A source wiring 170 formed of a metal film is provided on the first metal oxide conductive layer 176a. The source wiring 170 is provided so as to extend into the region of the fifth contact hole 166. The fifth contact hole 166 is formed so as to penetrate the first insulating layer 210 and the fourth transparent resin layer 202d. The source wiring 170, the common electrode 144a, and the common wiring 144b are formed of a metal material such as titanium (Ti), aluminum (Al), molybdenum (Mo), or copper (Cu).

[0104] The first insulating layer 210 has, for example, a structure in which a first silicon nitride film 214a and a first silicon oxide film 215a are laminated from the side of the fourth transparent resin layer 202d. The second insulating layer 212 has, for example, a structure in which a second silicon oxide film 215b and a second silicon nitride film 214b are laminated from the side of the first oxide semiconductor layer 180a. The first oxide semiconductor layer 180a is provided in contact with the first silicon oxide film 215a and the second silicon oxide film 215b. The generation of oxygen deficiency is suppressed by providing the first oxide semiconductor layer 180a with its upper and lower surfaces in contact with a silicon oxide film.

[0105] The first gate electrode 150 and the second gate electrode 151 are fabricated using a metal material such as aluminum (Al), molybdenum (Mo), tungsten (W), zirconium (Zr), or copper (Cu). As the aluminum alloy, an aluminum-neodymium alloy (AlNd), an aluminum-neodymium-nickel alloy (AlNdNi), an aluminum-carbon-nickel alloy (AlCNi), a copper-nickel alloy (CuNi), etc. can be used. For example, the first gate electrode 150 and the second gate electrode 151 are formed of a film such as aluminum (Al), a molybdenum-tungsten (MoW) alloy, or a molybdenum-titanium (MoTi) alloy.

[0106] The selection transistor 138 has a structure in which a first gate electrode 152, a first insulating layer 210, a second oxide semiconductor layer 180b, a second insulating layer 212, and a second gate electrode 153 are stacked. In the selection transistor 138, a channel is formed in a region where the second oxide semiconductor layer 180b overlaps with the first gate electrode 152 and the second gate electrode 153. The first gate electrode 152 is provided in contact with the shield electrode 116.

[0107] The third metal oxide conductive layer 176c and the fourth metal oxide conductive layer 176d are provided between the first insulating layer 210 and the second oxide semiconductor layer 180b. By being provided in contact with the lower surface of the second oxide semiconductor layer 180b, the third metal oxide conductive layer 176c and the fourth metal oxide conductive layer 176d function as a source region and a drain region. The third metal oxide conductive layer 176c and the fourth metal oxide conductive layer 176d are provided so as to sandwich the first gate electrode 152 and the second gate electrode 153 from both sides in a plan view.

[0108] The third metal oxide conductive layer 176c is provided in contact with the lower surface of the data signal line 108. The data signal line 108 has an increased contact area and a reduced contact resistance compared to the case where it is connected via a contact hole by directly contacting the third metal oxide conductive layer 176c.

[0109] The drain wiring 173 is provided in contact with the upper surface of the fourth metal oxide conductive layer 176d. The second oxide semiconductor layer 180b is provided so as to cover the upper surfaces of the fourth metal oxide conductive layer 176d and the drain wiring 173. The drain wiring 173 is connected to the second gate electrode 151 of the driving transistor 136 via the seventh contact hole 168.

[0110] The capacitive element 140 shown in FIG. 16B is formed in a region where the drain wiring 173, the fourth metal oxide conductive layer 176d, the first insulating layer 210, the fourth transparent resin layer 202d, and the common wiring 144b overlap. In the capacitive element 140, the fourth metal oxide conductive layer 176d and the drain wiring 173 form one capacitive electrode, and the common wiring 144b forms the other capacitive electrode. The capacitive element 140 is provided between the drain electrode of the selection transistor 138 and the common wiring 144b.

[0111] The driving transistor 136 and the selection transistor 138 are covered with the third insulating layer 216. The third insulating layer 216 is formed of an organic resin material such as an acrylic resin, a polyimide resin, an epoxy resin, a polysiloxane resin, or a polyamide resin. By being formed of these resin compositions, the third insulating layer 216 functions as a planarization film that embeds the driving transistor 136 and the selection transistor 138. The third insulating layer 216 may be formed of an inorganic insulating film such as a silicon oxide film or a silicon nitride film.

[0112] As shown in FIG. 16A, the EL element 142 has a structure in which, from the side of the transparent resin substrate 200, a first electrode 220 corresponding to the cathode, an electron transport layer 222 (a first electron transport layer 222a and a second electron transport layer 222b), an electron injection layer 224, a light-emitting layer 226, a hole transport layer 228, a hole injection layer 230, and a second electrode 232 corresponding to the anode are laminated. For convenience, an EL element having a structure in which a hole transport layer, a light-emitting layer, an electron transport layer, and a cathode are laminated from the anode side, such as on the anode, is called a forward lamination structure, and a case having the reverse lamination order may be called a reverse lamination structure. The EL element 142 shown in FIG. 16A is classified as a reverse lamination structure.

[0113] The first electrode 220 is continuous from the first metal oxide conductive layer 176a, and the first electron transport layer 222a has a structure continuous from the first oxide semiconductor layer 180a. By having such a structure, a state is formed in which the driving transistor 136 and the EL element 142 are connected without using a contact hole. The first electrode 220 corresponding to the cathode is formed of the same metal oxide conductive material as the first metal oxide conductive layer 176a. Also, the first electron transport layer 222a is formed of the same oxide semiconductor material as the first oxide semiconductor layer 180a.

[0114] In the region where the EL element 142 is formed, a third insulating layer 216 and a second insulating layer 212 are provided with a third opening 234. The upper surface of the first electron transport layer 222a disposed on the upper layer side of the first electrode 220 is exposed by the third opening 234. On the first electron transport layer 222a, a second electron transport layer 222b, an electron injection layer 224, a light emitting layer 226, a hole transport layer 228, a hole injection layer 230, and a second electrode 232 as an anode are laminated. The region where these laminates overlap with the first electrode 220 becomes the light emitting region of the EL element 142.

[0115] On the upper layer of the first electrode 220, a first electron transport layer 222a formed of the same layer as the first oxide semiconductor layer 180a is provided. The first electron transport layer 222a preferably has a band gap of 3.0 eV or more and has translucency to visible light. The second electron transport layer 222b is formed of a metal oxide material containing one or more elements selected from indium oxide, zinc oxide, gallium (Ga) oxide, tin (Sn) oxide, magnesium (Mg) oxide, silicon (Si) oxide, hafnium (Hf) oxide, tantalum (Ta) oxide, and niobium (Nb) oxide. These metal oxide materials have a band gap of 3.0 eV or more and have translucency to visible light. The second electron transport layer 222b is formed with a film thickness of 50 nm to 1000 nm. The EL element 142 prevents a short circuit between the first electrode 220 and the second electrode 232 by the second electron transport layer 222b having a film thickness within this range.

[0116] The carrier concentration of the second electron transport layer 222b is preferably 1 / 10 or less, preferably 1 / 100 or less of the carrier concentration of the first electron transport layer 222a. Specifically, the carrier concentration of the second electron transport layer 222b is 10 13 / cm 3 ~10 17 / cm 3 whereas the carrier concentration of the first electron transport layer 222a is in the range of 10 15 / cm 3 ~10 19 / cm 3 . Preferably, the difference between the carrier concentrations of both is one digit or more, preferably two digits or more as described above. The first electron transport layer 222a has a carrier concentration in the range of 10 15 / cm 3 ~10 19 / cm 3 , which can reduce the resistance loss in the connection between the driving transistor 136 and the EL element 142 and suppress the increase in the driving voltage. When the carrier concentration of the second electron transport layer 222b is 10 20 / cm 3 or more, the excited state in the light emitting layer 226 is deactivated and the light emission efficiency decreases. On the other hand, when the carrier concentration of the second electron transport layer 222b is less than 10 13 / cm 3 , the carriers supplied to the light emitting layer 226 are reduced and sufficient luminance cannot be obtained. Thus, by providing the first electron transport layer 222a in contact with the second electron transport layer 222b and making the carrier concentrations of both different, an increase in the driving voltage can be prevented and the light emission efficiency of the EL element 142 can be increased.

[0117] The carrier concentrations of the first electron transport layer 222a and the second electron transport layer 222b can be controlled by the concentration of oxygen vacancies in the oxide semiconductor. The oxygen vacancies in the oxide semiconductor act as donors. When the oxygen vacancy density of the oxide semiconductor is increased, the carrier concentration increases, and when the oxygen vacancy density is decreased, the carrier concentration decreases. The oxygen vacancies in the oxide semiconductor can be increased, for example, by acting hydrogen, and can be decreased by supplying oxygen.

[0118] In the EL element, the electron injection layer is used to reduce the energy barrier for injecting electrons from the cathode into the electron transport layer. The electron injection layer 224 is provided to facilitate the injection of electrons from the second electron transport layer 222b into the light-emitting layer 226. The electron injection layer 224 is provided between the second electron transport layer 222b and the light-emitting layer 226.

[0119] A material with a small work function is used for the electron injection layer 224. The electron injection layer 224 is, for example, C12A7 (12CaO·7Al2O3) electride, Mg 0.3 Zn 0.7 O, Zn 0.7 Si 0.3 O x and is formed of an oxide semiconductor material containing the same. The electron injection layer 224 is formed with a thickness of 1 nm to 100 nm. By using such an electron injection layer 224, the amount of electrons injected from the second electron transport layer 222b into the light-emitting layer 226 can be increased, and the light-emitting efficiency can be enhanced.

[0120] Various light-emitting materials can be applied to the light-emitting layer 226. The light-emitting layer 226 is formed, for example, using a fluorescent material, a phosphorescent material that emits phosphorescence, or a thermally activated delayed fluorescence (TADF) material. For the light-emitting layer 226, materials with different emission colors are used corresponding to the plurality of sub-pixels 105 included in the pixel 104. To make the light-emitting layer 226 a white light-emitting layer, a structure in which a blue light-emitting layer and a yellow light-emitting layer are laminated is used. The light-emitting layer 226 can be fabricated by a vapor deposition method, a transfer method, a spin coating method, a spray coating method, a gravure printing method, or the like. The film thickness of the light-emitting layer 226 may be appropriately selected, and is provided, for example, in the range of 10 nm to 100 nm.

[0121] The positive hole transport layer 228 is formed of, for example, an arylamine compound, an amine compound containing a carbazole group, an amine compound containing a fluorene derivative, and the like. The positive hole transport layer 228 is produced by a vacuum evaporation method, a coating method, or the like. The positive hole transport layer 228 is formed with a film thickness of 10 nm to 500 nm. When the positive hole injection layer 230 is formed, the positive hole transport layer 228 may be omitted.

[0122] The positive hole injection layer 230 is formed using a metal oxide such as molybdenum oxide, vanadium oxide, ruthenium oxide, tungsten oxide, manganese oxide, or the like. Further, the positive hole injection layer 230 is formed using a material such as phthalocyanine (H2Pc), copper (II) phthalocyanine (abbreviation: CuPc), hexaazatriphenylene hexacarbonitrile (HAT-(CN)6), or the like. The positive hole injection layer 230 is formed with a thickness of 1 nm to 100 nm.

[0123] The second electrode 232 corresponding to the anode is preferably formed of a material having a work function of 4.0 eV or more. The second electrode 232 is formed using, for example, a conductive metal oxide such as indium tin oxide (ITO), indium zinc oxide (IZO), tungsten oxide (WO x ) and indium oxide (IWZO) containing zinc oxide (ZnO). Since the EL element 142 is of a bottom emission type, the second electrode 232 preferably has a light reflecting surface. Since the above-mentioned conductive metal oxide has translucency, it is preferable to form a light reflecting surface by laminating a metal film such as aluminum (Al) or silver (Ag).

[0124] Although omitted in FIGS. 16A and 16B, a passivation film for blocking the intrusion of oxygen and moisture may be provided on the EL element 142.

[0125] As described above, the sub-pixel 105 according to this embodiment has a structure in which the n-channel driving transistor 136 and the EL element 142 are connected. The EL element 142 has a bottom emission type structure that emits light toward the side of the shield electrode 116. Since the electron transport layer and the electron injection layer of the EL element 142 are formed of an inorganic metal oxide semiconductor material, it has a structure that suppresses the deterioration of the light emission characteristics due to moisture (H2O) and oxygen (O2).

[0126] FIG. 17 shows a planar layout diagram showing another configuration of the sub-pixel 105. The sub-pixel 105 shown in FIG. 17 has a structure in which the second gate electrode 153 of the selection transistor 138 and the scanning signal line 106a are formed of the same conductive layer. A second auxiliary electrode 207 is provided on the second sensor electrode 114 (in FIG. 17, the pattern of the second sensor electrode 114 is omitted and only the second auxiliary electrode 207 is shown). The first light shielding layer 208a and the second light shielding layer 208b are formed of the same metal film as the second auxiliary electrode 207 and are provided on the second sensor electrode 114.

[0127] FIG. 18 shows a planar layout of the sub-pixel 105, and shows a mode in which the connection structure between the driving transistor 136 and the common electrode 144a is different from that of the sub-pixel 105 shown in FIG. 15. FIG. 19A shows a cross-sectional structure corresponding to the D5-D6 line shown in FIG. 18, and FIG. 19B shows a cross-sectional structure corresponding to the D7-D8 line.

[0128] As shown in FIGS. 18 and 19A, the source wiring 170 of the driving transistor 136 is connected to the common electrode 144a by a connection wiring 172 formed of the same conductive layer as the second gate electrode 151. The connection wiring 172 is connected to the source wiring 170 through an eighth contact hole 171 formed in the second insulating layer 212, and is connected to the common electrode 144a through a fifth contact hole 166 formed in the second insulating layer 212, the first insulating layer 210, and the fourth transparent resin layer 202d. Even with such a connection structure, each of the first sub-pixel 105r, the second sub-pixel 105g, and the third sub-pixel 105b shown in the equivalent circuit of FIG. 4 can be realized.

[0129] FIG. 20 shows the planar layout of sub-pixel 105, and shows a mode in which the connection structure between selection transistor 138 and data signal line 108 is different from that of sub-pixel 105 shown in FIG. 18. Further, FIG. 21A shows a cross-sectional structure corresponding to lines D9-D10 shown in FIG. 20, and FIG. 21B shows a cross-sectional structure corresponding to lines D11-D12.

[0130] As shown in FIGS. 20 and 21B, the source electrode 174 of selection transistor 138 is connected to data signal line 108 formed of the same conductive layer as second gate electrode 153. Data signal line 108 is provided on second insulating layer 212 and is connected to source electrode 174 via ninth contact hole 175. Scanning signal line 106a is provided on a layer lower than first insulating layer 210. Therefore, even when second insulating layer 212 is formed thinly, even if data signal line 108 provided in the same layer as second gate electrode 153 is provided to cross scanning signal line 106a, short circuit at the crossing portion can be prevented.

[0131] 1-6. Sealing Structure FIG. 22A shows an example of the connection structure between first sensor electrode 112 and lead-out wiring 147. Lead-out wiring 147 is a wiring that connects first sensor electrode 112 and second connection terminal 146b. First sensor electrode 112 is connected to lead-out wiring 147 in the outer region of display portion 102. Lead-out wiring 147 is provided on fourth transparent resin layer 202d in the same manner as second connection terminal 146b. Similar to the structure shown in FIG. 5, shield electrode 116 is provided to extend below second connection terminal 146b. Second connection terminal 146b is provided above shield electrode 116, so that it can withstand the crimping process when connecting flexible circuit board 126, and can prevent the depression, deformation, and peeling of second connection terminal 146b.

[0132] The shield electrode 116 has a first opening 158. A first contact hole 159 having a hole diameter smaller than the diameter of the first opening 158 is provided in this portion. The first contact hole 159 penetrates the fourth transparent resin layer 202d, the third transparent resin layer 202c, and the second transparent resin layer 202b, exposing the upper surface of the first sensor electrode 112. The lead wiring 147 extends from the second connection terminal 146b to the first contact hole 159 and is connected to the first sensor electrode 112.

[0133] A first insulating layer 210, a second insulating layer 212, and a third insulating layer 216 are provided on the fourth transparent resin layer 202d. A second electrode 232 is provided on the third insulating layer 216. FIG. 22 shows a state in which a sealing layer 236 is provided on the upper layer side of the second electrode 232. Although the structure of the sealing layer 236 varies, for example, it has a structure in which a silicon carbonitride film 237a, a silicon nitride film 238, and a silicon carbonitride film 237b are laminated.

[0134] The lead wiring 147 extends outward (toward the end of the transparent resin substrate 200) from the region covered by the third insulating layer 216 and the sealing layer 236 and is connected to the second connection terminal 146b. The lead wiring 147 and the second connection terminal 146b are formed of the same conductive layer and are formed in one continuous pattern.

[0135] FIG. 22A shows an aspect having a dividing region 240 in a region near the end of the transparent resin substrate 200. The transparent resin substrate 200 is provided on a support substrate (not shown) in the manufacturing process and is divided at the dividing region 240 when separated into individual panels. A continuous opening groove is formed in the dividing region 240 so as to surround the display panel. The opening groove is formed, for example, by laser processing. The transparent resin substrate 200 is peeled from the support substrate by laser ablation processing after forming the dividing region 240.

[0136] FIG. 22B shows a structure in which the shield electrode 116 does not extend to the region of the second connection terminal 146b as shown in FIG. 7. In this structure, it is preferable that the first insulating layer 210 is provided below the lead wiring 147 and the second connection terminal 146b. The lead wiring 147 is connected to the first sensor electrode 112 through a first contact hole 159 that penetrates the first insulating layer 210, the fourth transparent resin layer 202d, the third transparent resin layer 202c, and the second transparent resin layer 202b.

[0137] Even when the shield electrode 116 is not provided below the second connection terminal 146b, the provision of the first insulating layer 210 enables it to withstand the crimping process when connecting the flexible circuit board 126, and can prevent the second connection terminal 146b from sinking, deforming, and peeling. Although not shown, the same effect can be obtained even if both the first insulating layer 210 and the shield electrode 116 are provided on the lower layer side of the second connection terminal 146b. Also, although not shown in FIGS. 22A and 22B, the structure of the first connection terminal 146a in the terminal portion is the same as that of the second connection terminal 146b, and the same effect can be obtained.

[0138] FIGS. 23A and 23B show a mode in which the configuration of the second insulating layer 212 is different from that in FIGS. 22A and 22B. Regarding the description of FIGS. 23A and 23B, the description will be centered on the parts different from FIGS. 22A and 22B.

[0139] FIG. 23A has a structure in which the shield electrode 116 is provided below the second connection terminal 146b and the second insulating layer 212 is provided on the lead wiring 147. The second insulating layer 212 covers the upper surface and side surface of the lead wiring 147 and is provided in contact with the fourth transparent resin layer 202d in a region where the lead wiring 147 is not provided (not shown). The second insulating layer 212 extends and is provided outside the third insulating layer 216 (on the side of the second connection terminal 146b). The second insulating layer 212 has a region in contact with the sealing layer 236 outside the third insulating layer 216.

[0140] The second insulating layer 212 and the sealing layer 236 include an insulating film formed of an inorganic insulating material. By providing the second insulating layer 212 and the sealing layer 236 in contact with each other outside the third insulating layer 216, the sealing performance can be enhanced. As shown in FIG. 16A, the layer forming the EL element 142 is provided in contact with the third insulating layer 216. The third insulating layer 216 in contact with the EL element 142 is sandwiched between the second insulating layer 212 and the sealing layer 236, and the end portion of the third insulating layer 216 is provided inside the outer end portions of the second insulating layer 212 and the sealing layer 236, thereby enhancing the performance of preventing the deterioration of the EL element 142. Further, since the second insulating layer 212 functions as a protective film for the lead wiring 147, deterioration and damage of the wiring can be prevented. Other structures are the same as those in FIG. 22A, and the same operational effects can be obtained.

[0141] FIG. 23B has a structure in which the first insulating layer 210 is provided under the second connection terminal 146b and the second insulating layer 212 is provided on the lead wiring 147. This structure can also enhance the sealing performance in the same manner as the structure shown in FIG. 23A. Other structures are the same as those in FIG. 22B, and the same operational effects can be obtained. Although not shown in FIG. 23B, the same effects can be obtained even if both the first insulating layer 210 and the shield electrode 116 are provided on the lower layer side of the second connection terminal 146b.

[0142] FIGS. 24A and 24B show modes in which the configurations of the first insulating layer 210 and the second insulating layer 212 are different from those in FIGS. 23A and 23B. Regarding the description of FIGS. 24A and 24B, the description will be centered on the portions different from FIGS. 23A and 23B.

[0143] Figures 24A and 24B have a structure in which a shield electrode 116 is provided under the second connection terminal 146b, and a first insulating layer 210 and a second insulating layer 212 are provided under the lead wiring 147 and the second connection terminal 146b. Since the first insulating layer 210 and the second insulating layer 212 are provided on the entire lower surface of the second connection terminal 146b, they can withstand the crimping process when connecting the flexible circuit board 126, and can further enhance the resistance to the depression, deformation, and peeling of the second connection terminal 146b.

[0144] Also, in the region outside the third insulating layer 216, there is a region where the sealing layer 236 is in contact with the lead wiring 147 and also in contact with the second insulating layer 212 (not shown), so the sealing performance can be enhanced and the deterioration of the EL element 142 can be prevented.

[0145] Figures 25A and 25B show an aspect in which the configuration of the lead wiring 147 is different from that in Figures 22A and 22B. The difference between Figure 25A and Figure 25B lies in the presence or absence of the shield electrode 116 under the second connection terminal 146b. Regarding the description of Figures 25A and 25B, the description will be centered on the parts different from Figures 22A and 22B.

[0146] As shown in Figures 25A and 25B, the connection structure between the first sensor electrode 112 and the second connection terminal 146b has a structure connected by a plurality of contact holes and a plurality of lead wirings. Specifically, a contact hole 169a is formed in the second transparent resin layer 202b, the first lead wiring 147a is connected to the first sensor electrode 112, a contact hole 169b is formed in the third transparent resin layer 202c, the second lead wiring 147b is connected to the first lead wiring 147a, a contact hole 169c is formed in the fourth transparent resin layer 202d, and the third lead wiring 147c is connected to the second lead wiring 147b.

[0147] The position of the contact hole 169a provided for connecting the first lead wiring 147a to the first sensor electrode 112 is different from the position of the contact hole 169b for connecting the second lead wiring 147b to the first lead wiring 147a. Also, the position of the contact hole 169b for connecting the second lead wiring 147b to the first lead wiring 147a is different from the position of the contact hole 169c for connecting the third lead wiring 147c to the second lead wiring 147b. By providing the positions of the plurality of contact holes shifted in this way, the depth of the contact hole per stage can be made shallower, and the connection of the lead wiring can be surely formed.

[0148] The configurations shown in FIGS. 25A and 25B can be applied to the configurations shown in FIGS. 23A and 23B, FIGS. 24A and 24B.

[0149] 1-7. Flexible Circuit Board and Integrated Circuit FIG. 26 shows the configuration of the transparent resin substrate 200 provided with the display unit 102 and the touch and fingerprint sensor unit 110, and the configuration of the flexible circuit board 126 provided with the second drive circuit 128.

[0150] The flexible circuit board 126 includes third connection terminals 148a, fourth connection terminals 148b, fifth connection terminals 148c, sixth connection terminals 149, and wiring groups 129a and 129b provided on a film base material 127. The wiring group 129 connects between the third connection terminals 148a to 148c and the second drive circuit 128, and between the second drive circuit 128 and the sixth connection terminals 149. The third connection terminal 148a is connected to the first connection terminal 146a on the transparent resin substrate 200 side, the fourth connection terminal 148b is connected to the second connection terminal 146b on the transparent resin substrate 200 side, and the fifth connection terminal 148c is connected to a connection terminal connected to the first drive circuit 118 on the transparent resin substrate 200 side. The sixth connection terminal 149 is connected to an external circuit that drives the display device 100 with a touch and fingerprint sensor.

[0151] As shown in FIG. 5, the second driving circuit 128 is a complex integrated circuit in which a first scanning signal line driving circuit block, a data signal line driving circuit block, and a touch and fingerprint sensor detection circuit block are integrated. The second driving circuit 128 is mounted on the surface of the film base material 127 by COF (Chip on Film).

[0152] FIG. 27 shows a plan view of the flexible circuit board 126. The flexible circuit board 126 is provided with a third connection terminal 148a, a fourth connection terminal 148b, and a fifth connection terminal 148c on a first side of a film base material 127 formed of polyimide or the like, and a sixth connection terminal 149 is provided on a second side opposite to the first side. The second driving circuit 128 is mounted in a central region of the film base material 127. FIG. 27 shows the region where the second driving circuit 128 is mounted with a dotted line.

[0153] A wiring group 129a is provided in a region between the third connection terminal 148a, the fourth connection terminal 148b, the fifth connection terminal 148c, and the second driving circuit 128. A wiring group 129b is provided in a region between the second driving circuit 128 and the sixth connection terminal 149. Each wiring of the wiring group 129b is drawn into a region where the pad 135 of the second driving circuit 128 is located from the sixth connection terminal 149. Each wiring of the wiring group 129a is drawn out from a region where the pad 135 of the second driving circuit 128 is located to the third connection terminal 148a, the fourth connection terminal 148b, and the fifth connection terminal 148c.

[0154] The pads 135 of the second driving circuit 128 are provided corresponding to the functional blocks. That is, the pads 135 of the second driving circuit 128 are arranged in the regions of the respective circuit blocks corresponding to the scanning signal line driving circuit block 130, the data signal line driving circuit block 132, and the touch and fingerprint sensor detection circuit block 134. The connection between each wiring of the wiring groups 129a and 129b and the pad 135 is connected by a conductive material. Also, the connection between the third connection terminal 148a, the fourth connection terminal 148b, the fifth connection terminal 148c, and the connection terminal on the side of the transparent resin substrate 200 is connected by a conductive material.

[0155] FIG. 28 corresponds to the configuration of the switching circuit 120 and the first sensor electrode 112 shown in FIG. 7, and shows a state in which the flexible circuit board 126 is overlaid on the terminal portion 122 and connection terminals are connected with a conductive material. The flexible circuit board 126 is provided with a third connection terminal 148a and a fourth connection terminal 148b corresponding to the first connection terminal 146a and the second connection terminal 146b provided on the terminal portion 122 of the transparent resin substrate 200. As described with reference to FIG. 5, the first connection terminal 146a is connected to the switching circuit 120, and the second connection terminal 146b is connected to the first sensor electrode 112 via a first contact hole 159 provided in a region inside the first opening 158 of the shield electrode 116.

[0156] The first connection terminal 146a and the third connection terminal 148a, and the second connection terminal 146b and the fourth connection terminal 148b are arranged to face each other in a separated state. At least one conductive particle 242 is provided between the first connection terminal 146a and the third connection terminal 148a. At least one conductive particle 242 is held in a state of being pressure-deformed between the first connection terminal 146a and the third connection terminal 148a. At least one conductive particle 242 is in contact with the first connection terminal 146a and the third connection terminal 148a. The first connection terminal 146a and the third connection terminal 148a are electrically connected by at least one conductive particle 242. Conductive particles are similarly provided between the second connection terminal 146b and the fourth connection terminal 148b. Note that it is preferable that at least one conductive particle 242 is composed of a plurality of conductive particles.

[0157] The conductive particle 242 is disposed on the first connection terminal 146a (or the third connection terminal 148a) in a state of being dispersed in the resin 244. In this state, when the first connection terminal 146a and the third connection terminal 148a are opposed to each other and the distance therebetween is narrowed to such an extent that the conductive particle 242 is pressure-deformed, the conductive particle 242 can protrude from the resin 244 and come into direct contact with the first connection terminal 146a and the third connection terminal 148a.

[0158] Preferably, a plurality of conductive particles 242 are included in the resin 244. For example, it is preferable that 2 to 7 conductive particles 242 are included in one region of the resin 244. As a result, a plurality of conductive particles 242 are interposed between the first connection terminal 146a and the third connection terminal 148a, and a reliable electrical connection can be achieved.

[0159] As shown in FIG. 28, the resin 244 containing a plurality of conductive particles 242 is arranged so as to be dispersed at a plurality of locations between the first connection terminal 146a and the third connection terminal 148a. In other words, between the first connection terminal 146a and the third connection terminal 148a, the conductive particles 242 are arranged in a state where their number and positions are controlled. In this way, by arranging the conductive particles 242 in a state where their number and positions are controlled in the region between the first connection terminal 146a and the third connection terminal 148a, a reliable electrical connection state can be formed, and short - circuiting with adjacent connection terminals can be prevented. Such a configuration effectively acts when the pitch of the connection terminals becomes narrow.

[0160] The diameter of the conductive particles 242 is preferably in the range of 2 μm or more and 10 μm or less. With such a size, even when the pitch of the connection terminals becomes 30 μm or less, short - circuiting between adjacent connection terminals can be prevented. Also, as shown in FIG. 28, when the resin 244 containing the conductive particles 242 is arranged so as to be discrete at a plurality of locations between the connection terminals, the discrete intervals are preferably 5 μm or more. By arranging in this way, the resin 244 containing the conductive particles 242 can be prevented from protruding from the first connection terminal 146a and the third connection terminal 148a, and the interval between the first connection terminal 146a and the third connection terminal 148a can be kept constant.

[0161] Although there are no limitations on the structure, shape, and material of the conductive particles 242, for example, particle nuclei obtained by coating a high-hardness resin material with a rubbery elastic resin or a high-hardness inorganic material with a rubbery inorganic elastomer may be metal-coated particles coated with a metal such as nickel (Ni), copper (Cu), or gold (Au). Further, the shape of the conductive particles 242 is not limited to spherical, and may be oblong or compact.

[0162] The resin 244 is a curable resin material. The curable resin material includes radical polymerization type resins. As the radical polymerization type resin material, it is preferably a (meth)acrylic monomer or a (meth)acrylate oligomer, and more preferably one having an ester-type bond. The (meth)acrylic oligomer has at least one or more (meth)acryloyl groups. For example, epoxy acrylate, urethane acrylate, polyester acrylate, polybutadiene acrylate, polyol acrylate, polyether acrylate, silicone resin acrylate, melamine acrylate, etc. can be used. It may be either monofunctional or polyfunctional, but it is more preferable to include a polyfunctional monomer or oligomer. The curable resin material may be composed of two or more selected from (meth)acrylate monomers and (meth)acrylate oligomers.

[0163] Although not shown, a second resin may be provided around the resin 244. The second resin is a curable resin material. As the curable resin material, fluorene-based acrylate can be used. Further, an ene compound having two or more functional groups selected from the group consisting of an allyl ether group, a vinyl ether group, an acrylate group, and a methacrylate group in the molecule or a mixture of two or more of the above ene compounds, and an ene / thiol-based curable resin containing a thiol compound having two or more thiol groups in one molecule, which is obtained by treating with an oxidizing compound, may also be used.

[0164] The resin 244 and the second resin further contain a photocuring initiation component. The photocuring initiation component may be a photo radical initiator, which is a compound that generates radicals by irradiating ultraviolet rays or visible light. As the ultraviolet radical initiator, for example, acetophenone-based initiators, benzoin ether-based initiators, benzophenone-based initiators, α-diketone-based initiators, and thioxanthone-based initiators can be used.

[0165] The resin 244 containing the conductive particles 242 can be provided on the first connection terminal 146a (or the third connection terminal 148a) by a printing method. As the printing method, an offset printing method is used. Since the resin 244 corresponding to the ink contains the conductive particles 242, it is preferable to use a pad printing method that uses an intaglio plate among the offset printing methods.

[0166] Since the resin 244 containing the conductive particles 242 is arranged on the first connection terminal 146a (or the third connection terminal 148a) by a printing method to connect the flexible circuit board 126 to the transparent resin substrate 200, even if the connection terminals are miniaturized and the pitch is narrowed, accurate connection can be achieved. In the touch and fingerprint sensor-equipped display device 100 according to the present embodiment, the number of connection terminals for extracting sensor signals increases because the first sensor electrode 112 of the touch and fingerprint sensor unit 110 is miniaturized. As shown in FIG. 26, even when the pitch is narrowed by including connection terminals for inputting signals for displaying an image to the display unit 102 and connection terminals for the touch and fingerprint sensor unit 110 in the same arrangement in the terminal unit 122, the flexible circuit board 126 can be bonded to the terminal unit 122 to form an electrical connection by connecting with the resin 244 containing the conductive particles 242.

[0167] FIG. 29 corresponds to the configuration of the switching circuit 120 and the first sensor electrode 112 shown in FIG. 8, and shows a state in which the flexible circuit board 126 is overlaid on the terminal portion 122 and the connection terminals are connected with a conductive material. In FIG. 29, one first sensor electrode 112 is provided for the two-column array of the pixels 104. Therefore, the first connection terminal 146a provided at the terminal portion 122 and connected to the switching circuit 120 and the third connection terminal 148a provided on the flexible circuit board 126 are provided close to each other. Even with such an arrangement of the connection terminals, when connecting the first connection terminal 146a and the third connection terminal 148a, short circuits between adjacent terminals can be prevented by using the conductive particles 242 dispersed in the resin 244 in a state where the number is controlled.

[0168] FIG. 30 shows an example in which the second drive circuit 128 is constituted by a complex integrated circuit in which a plurality of functions are integrated. The touch and fingerprint sensor-equipped display device 100 according to the present embodiment is not limited to this example. As shown in FIG. 30, the driver IC 125a for driving the display unit 102 and the driver IC 125b for driving the touch and fingerprint sensor may be formed of separate IC chips and mounted on the flexible circuit board 126.

[0169] FIG. 31 shows a plan view of the flexible circuit board 126 on which the driver IC 125a for driving the display unit 102 and the driver IC 125b for driving the touch and fingerprint sensor are mounted. The wiring through which the signal of the first sensor electrode 112 is output is arranged to pass through the region of the driver IC 125a for driving the display unit and reach the driver IC 125b for driving the touch and fingerprint sensor. The wiring connecting the driver IC 125a for driving the display unit and the sixth connection terminal 149 is arranged to pass through the region of the driver IC 125b for driving the touch and fingerprint sensor and reach the sixth connection terminal 149.

[0170] The driver IC 125a that drives the display unit may be partitioned into a scanning signal line driving circuit block 130 and a data signal line driving circuit block 132. In this embodiment, as shown in FIG. 2, the first driving circuit 118 also serves as the scanning signal line driving circuit and the driving circuit for the second sensor electrode 114. For the first driving circuit 118, the signal for driving the scanning signal line is output from the driver IC 125a that drives the display unit, and the signal for controlling the driving of the second sensor electrode is output from the driver IC 125b that drives the touch and fingerprint sensor.

[0171] As shown in FIGS. 30 and 31, even when the driver IC for driving the display unit and the driver IC for driving the touch and fingerprint sensor unit are provided separately, two driver ICs can be mounted on the flexible circuit board 126 by changing the wiring structure.

[0172] According to the display device with a touch and fingerprint sensor according to this embodiment, by connecting the data signal line to the switching circuit, an increase in connection terminals can be suppressed even when the touch and fingerprint sensor unit is provided. In other words, by connecting the data signal line to the switching circuit, an increase in connection terminals can be suppressed even when the first sensor electrode (receiver electrode) is arranged at a high density. As a result, a connection failure between the flexible circuit board at the terminal portion can be reduced.

[0173] According to the display device with a touch and fingerprint sensor according to this embodiment, by connecting the second sensor electrode (transmitter electrode) of the touch and fingerprint sensor unit 110 and the scanning signal line of the display unit 102, the scanning signal line of the display unit 102 can be used in combination as an auxiliary electrode for reducing the resistance of the second sensor electrode. Also, by providing the scanning signal line in contact with the second sensor electrode and connecting the second gate electrode and the scanning signal line via a contact hole, even if the second gate insulating layer is made thin, a short circuit between the data signal line and the scanning signal line can be prevented, and the driving ability of the transistor (thin film transistor) can be enhanced. Furthermore, by forming the scanning signal line with a metal layer in contact with the second sensor electrode, a light shielding layer for the transistor can be formed with the metal layer.

[0174] [Second Embodiment] FIG. 32 shows a display device 100 with a touch and fingerprint sensor, in which a display unit 102 with pixels 104 arranged therein, a touch and fingerprint sensor unit 110 with a first sensor electrode 112 and a second sensor electrode 114 arranged therein, a first drive circuit 118, a switching circuit 120, a terminal unit 122, and a flexible circuit board 126 are provided. The first drive circuit 118 includes a scan signal line drive circuit 118a that outputs a scan signal to the scan signal lines and a scan signal to the second sensor electrode 114, and an output switching circuit 118b that switches the connection between the scan lines and the second sensor electrode 114.

[0175] The second drive circuit 128 may be formed of a complex integrated circuit in which circuit blocks having different functions are integrated as in the first embodiment. Control signals for the scan signal line drive circuit 118a and the output switching circuit 118b are output from the scan signal line drive circuit block 130.

[0176] FIG. 33 shows an example of the output switching circuit 118b corresponding to the arrangement of the second sensor electrodes 114 shown in FIG. 9. The output switching circuit 118b includes a first switching element 141_1 connected to the scan signal line (G_1) and a second switching element 145_1 connected to the second sensor electrode 114 (SC_1) with respect to the output of the first drive circuit 118. The first switching element 141_1 and the second switching element 145_1 are connected in parallel. First switching elements 141_1 to 141_n are provided for the scan signal lines (G_1 to G_n), and second switching elements 145_1 to 145_n are provided for the second sensor electrodes 114 (SC_1 to SC_n). The first switching element 141_1 and the second switching element 145_1 are formed of transistors, and gates for controlling on / off are connected to a first output switching signal line 143a and a second output switching signal line 143b. The first output switching signal line 143a and the second output switching signal line 143b are connected to the second drive circuit 128, and their on / off is controlled by a control signal output from the scan signal line drive circuit block 130.

[0177] During the display period, the first switching elements 141_1 to 141_n are turned on by the control signal of the first output switching signal line 143a, the second switching elements 145_1 to 145_n are turned off by the control signal of the second output switching signal line 143b, and scanning signals are sequentially output to the scanning signal lines (G_1 to G_n). During the sensing period, the first switching elements 141_1 to 141_n are turned off by the control signal of the first output switching signal line 143a, the second switching elements 145_1 to 145_n are turned on by the control signal of the second output switching signal line 143b, and scan signals are sequentially output to the second sensor electrodes 114 (SC_1 to SC_n). In this way, the first driving circuit 118 can share the scanning signal line driving circuit for driving the display unit 102 and the scanning circuit of the touch and fingerprint sensor unit 110 by switching the scanning signal lines (G_1 to G_n) and the second sensor electrodes 114 (SC_1 to SC_n) by the first switching elements 141_1 to 141_n and the second switching elements 145_1 to 145_n.

[0178] FIG. 34 shows the configuration of the switching circuit 118b corresponding to the arrangement of the second sensor electrodes 114 shown in FIG. 10. In FIG. 10, since one second sensor electrode 114 is arranged for two rows of pixels 104, the number of second sensor electrodes 114 is half the number of scanning signal lines. Therefore, the output switching circuit 118b has a configuration in which a circuit in which the first switching element 141_1 connected to the scanning signal line (G_1) and the second switching element 145_1 connected to the second sensor electrode 114 (SC_1) are provided in parallel with respect to the output of the first driving circuit 118 and a circuit including only the first switching element 141_2 connected to the second scanning signal line (G_2) are alternately arranged. Similarly, with the configuration of the switching circuit 118b shown in FIG. 34, the touch and fingerprint sensor-equipped display device 100 can be driven by switching the scanning signal lines (G_1 to G_n) and the second sensor electrodes 114 (SC_1 to SC_(n + 1) / 2).

[0179] The display device with a touch and fingerprint sensor shown in FIG. 32 is the same as the display device with a touch and fingerprint sensor shown in the first embodiment except for the configuration of the first driving circuit 118, and the same operational effects can be obtained.

[0180] [Third Embodiment] This embodiment shows an example of a display device with a touch and fingerprint sensor in which the configuration of the driving circuit that outputs a scanning signal and a scan signal is different from that of the first embodiment. In the following description, the focus will be on the differences from the first embodiment.

[0181] FIG. 35 shows a display device 100 with a touch and fingerprint sensor provided with a display unit 102 in which pixels 104 are arranged, a touch and fingerprint sensor unit 110 in which a first sensor electrode 112 and a second sensor electrode 114 are arranged, a first driving circuit 118, a switching circuit 120, a terminal unit 122, and a flexible circuit board 126. The first driving circuit 118 is divided into two circuit blocks: a scanning signal line driving circuit 118c that outputs a scanning signal to the scanning signal lines and a scan circuit 118d that outputs a scan signal to the second sensor electrode 114.

[0182] The second driving circuit 128 may be formed of a complex integrated circuit in which circuit blocks having different functions are integrated as in the first embodiment. Control signals to the scanning signal line driving circuit 118c of the display unit 102 and the scan circuit 118d of the touch and fingerprint sensor unit 110 are output from the scanning signal line driving circuit block 130.

[0183] The display device 100 with a touch and fingerprint sensor shown in FIG. 35 can simultaneously perform image display and sensing of the touch and fingerprint sensor because the scanning signal line driving circuit 118c and the scan circuit 118d are formed of two independent circuit blocks.

[0184] FIG. 36A shows a plan view of the second sensor electrode 114 corresponding to the configuration shown in FIG. 35. FIG. 36B also shows the scanning signal line 106 and the selection transistor 138 provided on the second sensor electrode 114 in dotted lines. FIG. 36B shows a cross-sectional structure corresponding to between C7 - C8 shown in FIG. 36A, and FIG. 36C shows a cross-sectional structure corresponding to between C9 - C10.

[0185] As shown in FIG. 36A, the second sensor electrode 114 is composed of a second sensor electrode layer 206 and a second auxiliary electrode 207. As shown in FIG. 36B, a fourth transparent resin layer 202d, a first insulating layer 210, and a second insulating layer 212 are provided between the second sensor electrode 114 and the scanning signal line 106, and the two are insulated. According to such a wiring structure, the scan signal for the second sensor electrode 114 and the scan signal for the scanning signal line 106 can be input simultaneously. That is, the display device 100 with a touch and fingerprint sensor can detect fingerprints while displaying an image.

[0186] FIG. 37 shows a timing chart of the display device 100 with a touch and fingerprint sensor shown in FIG. 35. As shown in FIG. 37, in the display device 100 with a touch and fingerprint sensor according to the present embodiment, the display period and the sensing period appear at the same timing. In the display device 100 with a touch and fingerprint sensor according to the present embodiment, in the first driving circuit 118, the scanning signal line driving circuit 118c of the display unit 102 and the scan circuit 118d of the touch and fingerprint sensor unit 110 are provided as independent circuit blocks, and also in the second driving circuit 128, the data signal line driving circuit block 132 and the touch and fingerprint sensor detection circuit block 134 are also provided as independent circuit blocks, so it is possible to perform image display and sensing simultaneously.

[0187] According to the display device 100 with a touch and fingerprint sensor according to the present embodiment, for example, it is possible to sense touch or fingerprints while displaying a video. Other configurations are the same as those of the display device with a touch and fingerprint sensor in the first embodiment, and the same effects can be achieved.

[0188] [Fourth Embodiment] This embodiment will describe an example in which a part of the transparent resin substrate 200 is replaced with ultra-thin glass (UTG) in the touch and fingerprint sensor-equipped display device 100 shown in the first embodiment.

[0189] FIG. 38 shows a touch and fingerprint sensor-equipped display device 100 in which ultra-thin glass is used for a part of the transparent resin substrate 200. Specifically, the transparent resin substrate 200 according to this embodiment is such that in the structure of the transparent resin substrate 200 shown in FIGS. 16A and 16B, ultra-thin glass is applied to the first transparent resin layer 202a. The thickness of the applied ultra-thin glass is 25 μm to 50 μm, for example, 30 μm. As shown in FIG. 38, for the transparent resin substrate 200 according to this embodiment, in order to prevent breakage, the four corners are processed into a round shape with a radius (R) of 2 mm to 5 mm. The ultra-thin glass is foldable, and the touch and fingerprint sensor-equipped display device 100 using such a transparent resin substrate 200 can be applied to an electronic device (for example, a smartphone, a tablet terminal, etc.) capable of folding the display screen. Note that the configuration according to this embodiment can be applied to the touch and fingerprint sensor-equipped display devices shown in the second and third embodiments.

[0190] [Fifth Embodiment] This embodiment shows an example of a touch and fingerprint sensor-equipped display device that employs a mounting method by chip on plastic (COP) as the mounting method of the drive circuit.

[0191] FIG. 39 shows a touch and fingerprint sensor-equipped display device 100 in which ultra-thin glass is used for a part of the transparent resin substrate 200. The display unit 102, the touch and fingerprint sensor unit 110, the first drive circuit 118, the switching circuit 120, the terminal unit 122, and the transparent resin substrate 200 are the same as those shown in the fourth embodiment. On the other hand, in this embodiment, it is different in that the second drive circuit 128 is mounted on the transparent resin substrate 200.

[0192] Similar to the transparent resin substrate shown in the fourth embodiment, the four corners of the transparent resin substrate 200 in this embodiment are also processed into a round shape with a radius (R) of 2 mm to 5 mm. When using ultra-thin reinforced glass for the transparent resin substrate 200, having such a corner shape can prevent damage at the four corners in the assembly process and improve the yield.

[0193] FIG. 40 shows a cross-sectional structure of the region where the second drive circuit 128 is mounted and the terminal portion 122. The second drive circuit 128 includes a first pad 135a and a second pad 135b. The first pad 135a is connected to the first connection terminal 146a via conductive particles 242, and the second pad 135b is connected to the second connection terminal 146b via conductive particles 242. The second drive circuit 128 can be mounted on the transparent resin substrate 200 by adopting a non-heated room-temperature pressurized mounting technique. The conductive particles 242 are dispersed in the resin 244, and the details are as described in detail in the description of FIG. 28.

[0194] The terminal portion 122 is provided outside the region where the second drive circuit 128 is mounted. FIG. 40 shows a structure in which the shield electrode 116 and the first insulating layer 210 extend from the region where the second drive circuit 128 is mounted to the region of the terminal portion 122. By adopting such a structure, the rigidity of the region where the second drive circuit 128 is mounted can be increased, and deformation and peeling of the connection terminals can be prevented. Thereby, the yield of the process of connecting the second drive circuit 128 can be improved. Further, it is more preferable to use a highly rigid para-based polyamide resin for the fourth transparent resin layer 202d.

[0195] As shown in FIGS. 39 and 40, by mounting the second drive circuit 128 on the transparent resin substrate 200 by CPO, the display device 100 with a touch and fingerprint sensor can also be realized. In the display device 100 with a touch and fingerprint sensor according to this embodiment, since the second drive circuit 128 is mounted on the transparent resin substrate 200, the flexible circuit board is omitted, and the number of components and the manufacturing process can be reduced.

[0196] [Sixth Embodiment] This embodiment shows the configuration of a display device 100 with a touch and fingerprint sensor, in which the circuit configuration of the pixel 104 has a different aspect from that of the first embodiment.

[0197] FIG. 41 is an example of an equivalent circuit of the pixel 104 and shows an example of a pixel circuit of a voltage writing method. As described in the first embodiment, the pixel 104 includes a first sub-pixel 105r, a second sub-pixel 105g, and a third sub-pixel 105b. FIG. 41 shows the configurations of the first sub-pixel 105r and the second sub-pixel 105g in detail. The pixel 104 has a configuration in which the columns of the first sub-pixel 105r, the columns of the second sub-pixel 105g, and the columns of the third sub-pixel 105b are arranged in a stripe pattern.

[0198] The first sub-pixel 105r includes a driving transistor 136r, a selection transistor 138r, a capacitive element 140r, and an EL element 142r. The second sub-pixel 105g includes a driving transistor 136g, a selection transistor 138g, a capacitive element 140g, and an EL element 142g. The selection transistor 138r of the first sub-pixel 105r has its second gate electrode connected to the scanning signal line 106(GBn) and its source side connected to the data signal line 108(Dm). The selection transistor 138g of the second sub-pixel 105g has its second gate electrode connected to the scanning signal line 136(GAn) and its source side connected to the data signal line 108(Dm + 1). Also, the selection transistor 138b of the third sub-pixel 105b has its second gate electrode connected to the scanning signal line 136(GBn) and its source side connected to the data signal line 108(Dm + 1). Thus, the pixel circuit according to this embodiment has a configuration in which the second gate electrodes of the selection transistors of adjacent sub-pixels are connected to different scanning signal lines and the source sides are connected to the same data signal line. Also, the common wiring 144 of the pixel 104 is arranged so as to be shared by the column Lr of the first sub-pixel 105r and the column Lg of the second sub-pixel 105g.

[0199] FIG. 42 shows a timing chart when driving the pixel 104 shown in FIG. 41. FIG. 42 shows that the scanning signal of the scanning signal line 106(GAn) is at time t -1It transitions from the low level (L level) to the high level (H level), turning on the selection transistor 138g. In synchronization, a data signal is input to the data signal line 108 (Dm+1), and data is written to the second sub-pixel 105g. At time t0, the scan signal transitions to the L level, turning off the selection transistor 138g. At the same time, the scan signal on the scan signal line 106 (GBn) transitions from the L level to the H level at time t0, turning on the selection transistor 138r and the selection transistor 138b. In synchronization, data signals are input to the data signal line 108 (Dm) and the data signal line 108 (Dm+1), and data is written to the first sub-pixel 108r and the third sub-pixel 108b. At time t1, the scan signal transitions to the L level, turning off the selection transistor 138r and the selection transistor 1438b. This shows the operation process.

[0200] In this way, by connecting the selection transistors of adjacent sub-pixels (the first sub-pixel 105r and the second sub-pixel 105g, the second sub-pixel 105g and the third sub-pixel 105b) to different scan signal lines, adjacent sub-pixels (for example, the second sub-pixel 105b and the third sub-pixel 105b) share the data signal line 108 (Dm+1), and data can be written at different timings. With such a configuration of the pixel circuit, the number of data signal lines can be reduced. That is, the number of connection terminals at the terminal portion 122 can be reduced.

[0201] FIG. 43 is an example of an equivalent circuit of the pixel 104 and shows an example of a pixel circuit of the current writing method. The pixel 104 includes the first sub-pixel 105r, the second sub-pixel 105g, and the third sub-pixel 105b. FIG. 43 shows the configurations of the first sub-pixel 105r and the second sub-pixel 105g in detail.

[0202] The first sub-pixel 105r includes a first transistor 138r (selection transistor), a second transistor 139r, a driving transistor 136r, a light emission control transistor 137r, a capacitive element 140r, and an EL element 142r. The first transistor 138r and the second transistor 139r are connected such that the second gate electrode is connected to the scanning signal line 106 (GBn) and the source side is connected to the data signal line 108 (Dm). The drain side of the first transistor 138r is connected to the second gate electrode of the driving transistor 136 and the capacitive element 140, and is used to control the timing of writing the data signal. The second transistor 139r is connected to the drain of the driving transistor 136, and its on / off operation is controlled at the same timing as the first transistor 138r, and is provided to compensate for the threshold voltage of the driving transistor 136r. The light emission control transistor 137r is connected in series between the EL element 142r and the driving transistor 136r, and the second gate is connected to the second scanning signal line 107 (En) to control the timing of light emission of the EL element 142r. The second sub-pixel 105g also has a similar configuration.

[0203] A second capacitive element 274r may be provided between the second scanning signal line 107 and the drain of the first transistor 138r. By providing the second capacitive element 274r, it is possible to suppress the voltage of the capacitive element 140r from fluctuating by ΔVgd due to the fluctuation of the gate-drain capacitance Cgd when the first transistor 138r turns off.

[0204] Although not shown, there is a column of a third sub-pixel 105b having a configuration similar to that of the column Lr of the first sub-pixel 105r, in which the source sides of the first transistor and the second transistor are connected to the data signal line 108 (Dm + 1), the second gate electrode is connected to the scanning signal line 106 (GBn), and the second gate electrode of the light emission control transistor is connected to the second scanning signal line 107 (En).

[0205] FIG. 44 shows a timing chart when driving the pixel 104 shown in FIG. 43. In FIG. 44, the scanning signal of the scanning signal line 106 (GAn) transitions from a low level (L level) to a high level (H level) at time t0, turning on the first transistor 138g and the second transistor 139g. In synchronization with this, a data signal is input to the data signal line 108 (Dm+1), and data is written to the second sub-pixel 105g. Also, an operation to compensate for the threshold voltage of the driving transistor 136g is performed. At time t1, the scanning signal of the scanning signal line 106 (GAn) transitions to the L level, turning off the first transistor 138g and the second transistor 139g. At the same time, the scanning signal of the scanning signal line 106 (GBn) transitions from a low level (L level) to a high level (H level) at time t1, turning on the first transistor 138r and the second transistor 139r. In synchronization with this, a data signal is input to the data signal line 108 (Dm), and data writing and an operation to compensate for the threshold voltage of the driving transistor 136r are performed in the first sub-pixel 108r. During such a data writing period, the second scanning signal line 107 (En) is at the L level, and the light emission control transistors 137r and 137g are off.

[0206] When the data writing period ends, it transitions to the light emission period. That is, the second scanning signal line 107 transitions from the L level to the H level, and a light emission signal is input, turning on the light emission control transistors 137r and 137g. As a result, currents corresponding to the drain currents of the driving transistors 136r and 136g flow through the EL elements 142r and 142g in the first sub-pixel 105r and the second sub-pixel 108g, causing light emission.

[0207] By connecting the selection transistors of adjacent sub-pixels (the first sub-pixel 105r and the second sub-pixel 105g) to different scanning signal lines, the number of data signal lines 108 can be reduced, and the number of connection terminals at the terminal portion 122 can be decreased.

[0208] FIG. 47 shows the arrangement of the data signal lines 108 and the common wiring 144 shown in FIGS. 41 and 43. The data signal lines 108 are provided on the upper layer side of the fourth transparent resin layer 202d, while the common wiring 144 is provided between the third transparent resin layer 202c and the fourth transparent resin layer 202d so as to be in contact with the shield electrode 116. The shield electrode 116 is formed of a transparent conductive film, while the common wiring 144 is formed of a metal film. By providing the common wiring 144 in a stripe pattern extending from one end to the other end of the shield electrode 116, the resistance of the shield electrode 116 can be reduced.

[0209] FIG. 46 shows a display device 100 with a touch and fingerprint sensor in which an ultra-thin reinforced glass is used for a part of the transparent resin substrate 200 according to the present embodiment. The display device 100 with a touch and fingerprint sensor shown in FIG. 46 has the same configuration as that shown in FIG. 39 except that the switching circuit 120 is not provided and the configurations of the third connection terminal 148a and the second scanning signal line driving circuit 118e are different.

[0210] In the second driving circuit 128, the third connection terminal 148a provided in the data signal line driving circuit block 132 is connected to the data signal line 108, and data signals are output to the respective pixels 104 of the display unit 102 without passing through the switching circuit. As shown in FIGS. 41 and 43, since the number of data signal lines 108 is arranged to be shared by adjacent pixel columns, the number of the third connection terminals 148a is reduced as compared with the conventional case.

[0211] FIG. 45 shows details of the connection portion between the transparent resin substrate 200 and the second driving circuit 128. The transparent resin substrate 200 is provided with a first connection terminal 146a and a second connection terminal 146b. The first connection terminal 146a is connected to the data signal line 108, and the second connection terminal 146b is connected to the first sensor electrode 112. The third connection terminal 148a of the second driving circuit 128 is connected to the first connection terminal 146a, and the fourth terminal 148b is connected to the second connection terminal 146b. Conductive particles 242 dispersed in the resin 244 are used for the connection portion. The details of the connection structure are the same as the structure shown in FIG. 28.

[0212] According to the present embodiment, when the display unit 102 has a configuration in which pixels corresponding to respective colors are arranged in a stripe pattern, by having a pixel circuit in which adjacent pixel columns share the data signal line 108, the number of data signal lines 108 can be reduced, and as a result, the number of connection terminals can be reduced without using the switching circuit 120.

[0213] [Embodiment 7] This embodiment shows an example of the layout of each element constituting the voltage writing type pixel 104 shown in FIG. 43.

[0214] FIG. 48 shows an example of the layout of the first sub-pixel 105r and the second sub-pixel 105g. The first sub-pixel 105r includes a first transistor 138r, a second transistor 139r, a driving transistor 136r, a light emission control transistor 137r, and a capacitive element 140r. The second sub-pixel 105g includes a first transistor 138g, a second transistor 139g, a driving transistor 136g, a light emission control transistor 137g, and a capacitive element 140g. Note that the layers constituting the EL elements 142r and 142g are omitted. Also, the first sensor electrode 112 and the second sensor electrode 114 are omitted.

[0215] Focusing on the first sub-pixel 105r, the first transistor 138r is laminated with the first oxide semiconductor layer 180a, the third metal oxide conductive layer 176c forming the source, the fourth metal oxide conductive layer 176d forming the drain, and the first scanning signal line 106(GBn). A second gate electrode 153 formed of a transparent conductive film extending in the region of the first transistor 138r is laminated via a second insulating layer 212 (not shown), and a first gate electrode 152 formed by the shield electrode 116 via a first insulating layer 210 (not shown) is laminated. The first gate electrode 152 is provided in the lower layer with respect to the first oxide semiconductor layer 180a, and the second gate electrode 153 is provided in the upper layer.

[0216] The second transistor 139r has the same configuration as the first transistor 138r, and has a configuration in which a fifth metal oxide conductive layer 176e forming a drain is connected to a second metal oxide conductive layer 176a forming a driving transistor 136r.

[0217] The driving transistor 136r has a structure in which a second gate electrode 151 of the same layer as the second gate electrode 153 is provided so as to cover the first oxide semiconductor layer 180a, the first metal oxide conductive layer 176a, and the second metal oxide conductive layer 176b. A capacitive element 140r is formed in a region where the second gate electrode 151 and the second metal oxide conductive layer 176b overlap.

[0218] The light emission control transistor 137r includes a first oxide semiconductor layer 180a, a sixth metal oxide conductive layer 176f connected to the first metal oxide conductive layer 176a, a seventh metal oxide conductive layer 176g disposed with a gap therebetween, a second gate electrode 268 formed in a region overlapping the two metal oxide conductive layers and forming the second scanning signal line 107(En), and a first gate electrode (266) formed by a shield electrode 116 (not shown), which are stacked. An EL element 142r (not shown) is connected to the light emission control transistor 137r via an eighth contact hole 264.

[0219] The second sub-pixel 105g has a similar configuration, and has a layout in which the first sub-pixel 105r is inverted with the common wiring 144 as the center and further inverted in the vertical direction.

[0220] FIG. 49 shows a partial cross-sectional structure of the first sub-pixel 105r, mainly showing the cross-sectional structures of the emission control transistor 137r, the capacitive element 140r, and the EL element 142r described in FIG. 48. As shown in FIG. 49, in the emission control transistor 137r, the sixth metal oxide conductive layer 176f and the second metal oxide conductive layer 176g are provided between the first insulating layer 210 and the first oxide semiconductor layer 180a. The first gate electrode 248 is formed of the same layer as the shield electrode 116, and the second gate electrode 250 (the second scanning signal line 107) is provided to overlap the first oxide semiconductor layer 180a via the second insulating layer 212. The capacitive element 140r is formed by a transparent conductive film forming the second gate electrode 151 that overlaps with each other with the second insulating layer 212 interposed therebetween and the second metal oxide conductive layer 176b. The second metal oxide conductive layer 176b has a structure connected to the shield electrode 116 by the fifth contact hole 166. The EL element 142r has a structure in which an electron transport layer 222, an electron injection layer 224, a light emitting layer 226, an electron blocking layer 227, a hole transport layer 228, a hole injection layer 230, and a second electrode 232 are laminated from the first electrode 220 (cathode) side. A planarization layer 246 and a passivation layer 248 are provided on elements such as the emission control transistor 137r. The EL element 142r is provided on the planarization layer 246.

[0221] FIG. 50 shows a planar layout of the EL element 142 and cross-sectional structures between E1 - E2 and between E3 - E4. The peripheral portion of the first electrode 220 is covered by the partition wall 262. Also, the eighth contact hole 264 where the first electrode 220 is connected to the emission control transistor 137 is provided at a position covered by the partition wall 262. When the electron transport layer 222 is formed of a coating-type material, the electron transport layer 222 is provided on the upper surface of the first electrode 220 and in a region surrounded by the partition wall 262. When the electron injection layer 224, the electron blocking layer 227, the hole transport layer 228, and the hole injection layer 230 are formed by vapor deposition, they are provided to cover the partition wall 262 and spread over the entire display portion 102. The light emitting layer 226 is provided to overlap the opening of the partition wall 262 when vapor depositing, using a shadow mask. Also, the light emitting layer 226 can be formed using an inkjet coating method, a gravure offset printing method, or the like.

[0222] As is apparent from FIGS. 48 and 50, the EL element 142, the first transistor 138, the second transistor 139, the driving transistor 136, and the light emission control transistor 137 are arranged so as to overlap. Since the gate electrodes, source and drain electrodes, and oxide semiconductor layer of these transistors forming the pixel circuit are formed of a transparent material that transmits visible light, even if the EL element 142 is a bottom emission type, light can be emitted to the outside through the transparent resin substrate 200.

[0223] [Eighth Embodiment] The driving transistor 136 that drives the EL element 142 has a capacitive element 140 for holding a voltage based on a data signal. Here, the voltage information written in the capacitive element 140 varies by ΔVgd when the gate voltage falls due to the gate-drain capacitance Cgd of the selection transistor 138. When the capacitance of the capacitive element 140 is large, there is no problem. However, in medium and small-sized displays, as the pixel size is reduced due to high definition and the capacitance of the capacitive element 140 cannot be increased, this effect cannot be ignored. Also, in the current writing method, when the capacitance of the capacitive element 140 is increased, it is necessary to lengthen the writing time. However, due to the relationship between the number of pixels and the driving frequency, there is a problem that sufficient writing time cannot be obtained, which hinders gradation expression.

[0224] FIG. 51 shows an example of a pixel circuit capable of suppressing the variation of ΔVgd as described above. Specifically, in a configuration where the sub-pixel 105 is connected such that the first transistor 138 (selection transistor) applies a data signal to the gate of the driving transistor 136 and the light emission control transistor 137 is connected between the EL element 142 and the driving transistor 136, the second transistor 139 is connected between the data line signal 108 and the drain of the light emission control transistor 137, and further, a second capacitive element 274 is connected between the second transistor 139 and the second gate electrode of the driving transistor 136, so that the voltage of the capacitive element 140 does not vary by ΔVgd when the gate voltage of the first transistor 138 falls.

[0225] FIG. 52 shows the planar layout of the sub-pixel 105 shown in FIG. 51, and FIG. 53 is a partial cross-sectional structure of the sub-pixel 105, showing the cross-sectional structures of the first transistor 138, the second capacitor element 274, and the EL element 142 disposed on the upper layer side thereof. The second capacitor element 274 has a structure provided such that the second capacitor electrode 272 overlaps via the fourth metal oxide conductive layer 176d extending from the first transistor 138 and the second insulating layer 212. Since the second capacitor electrode 272 can be formed in the same layer as the second gate electrode 151 of the driving transistor 136, it is not necessary to add a new layer, and it can be formed without increasing the number of photomasks.

[0226] Also, as shown in the layout diagram of the sub-pixel 105 in FIG. 54 and the partial cross-sectional view of the sub-pixel 105 in FIG. 55, the second gate electrode 151 of the driving transistor 136 is connected to the drain of the light emission control transistor 137, and the second capacitor element 274 may be formed by providing it so as to overlap via the fourth metal oxide conductive layer 176d extending from the first transistor 138 and the second insulating layer 212.

[0227] In this way, by providing the second capacitor element 274, it is possible to suppress the voltage fluctuation of the capacitor element 140 due to the fluctuation of ΔVgd when the gate voltage falls due to the gate-drain capacitance Cgd of the selection transistor 138. This embodiment can be appropriately combined with the touch and fingerprint sensor-equipped display device shown in the first embodiment and implemented.

[0228] [Embodiment 9] This embodiment shows an example of the light extraction structure of the EL element 142 provided in the touch and fingerprint sensor-equipped display device 100.

[0229] FIG. 56 shows a cross-sectional structure of the sub-pixel 105 according to the present embodiment. The sub-pixel 105 according to the present embodiment has a structure in which a wire grid polarizer 250 is provided on the side where the EL element 142 emits light. For example, the wire grid polarizer 250 is provided between the transparent resin substrate 200 provided with the first sensor electrode 112 and the second sensor electrode 114 and the EL element 142. Specifically, FIG. 56 shows an example in which the wire grid polarizer 250 is provided on the upper surface of the shield electrode 116. As described with reference to FIG. 16A, the EL element 142 has a structure in which an electron transport layer 222, an electron injection layer 224, a light-emitting layer 226, a hole transport layer 228, and a hole injection layer 230 are laminated between the first electrode 220 and the second electrode 232.

[0230] Since the EL element 142 emits light toward the transparent resin substrate 200 side, the first electrode 220 is formed of a transparent conductive film and the second electrode 232 is formed of a metal film. The EL element 142 shown in the present embodiment further has a structure in which a light scattering layer 251 is provided between the electron injection layer 230 and the second electrode 232. The light scattering layer 251 is formed by applying a transparent adhesive ink 254 containing transparent light scattering beads 252 on the electron injection layer 230. For example, the light scattering layer 251 can be formed by applying the transparent adhesive ink 254 containing the transparent light scattering beads 252 to the region of the sub-pixel 105 by a printing method such as an inkjet printing method.

[0231] FIG. 58 shows the detailed structure of the wire grid polarizer 250. The wire grid polarizer 250 has a structure in which fine wire patterns are arranged periodically. The fine wire patterns are formed of metal wires 258 made of, for example, aluminum (Al), aluminum-silver alloy (AlAg), silicon, or an aluminum alloy (Al—Si, Al—Nd) added with neodymium. A light absorption layer 256 that absorbs visible light may be provided on the shield electrode 116 side of the metal wire 258. The light absorption layer 256 is preferably formed of a semiconductor material having a light absorption band in visible light, such as silicon (Si), germanium (Ge), or silicon germanium (SiGe), or a high melting point metal silicide (a compound of a high melting point metal such as chromium (Cr), cobalt (Co), nickel (Ni), tantalum (Ta), molybdenum (Mo), titanium (Ti), niobium (Nb) and silicon). The width of the metal wire 258 is 100 nm or less, preferably 70 nm or less, the thickness is 100 nm or more, preferably 200 nm or more, and it is arranged at a pitch (for example, 200 nm or less) that is half or less of the wavelength of visible light. For this reason, although the shiny surface of the metal can be visually recognized, by providing the light absorption layer 256 on the side surface of the wire grid polarizer 250 where the metal wire 258 is superposed, mirroring of the display screen can be prevented.

[0232] FIG. 59 shows an example in which the wire grid polarizer 250 is provided on the insulating layer 260. Since the metal wires 258 constituting the wire grid polarizer 250 are arranged at a pitch (for example, 200 nm or less) that is half or less of the wavelength of visible light, they can also serve as the shield electrode 116. At this time, similar to the shield electrode 116, the metal wire 258 is preferably controlled to a certain potential (for example, ground potential).

[0233] The wire grid polarizer 250 is a linear polarizer and has a transmission polarization axis and a reflection polarization axis. As shown in FIG. 68, by providing the wire grid polarizer 250, among the emitted light of the EL element 142, the polarization component (TM wave) parallel to the transmission polarization axis is transmitted and emitted from the transparent resin substrate 200, and the polarization component (TE wave) parallel to the reflection polarization axis is reflected. That is, half of the light emitted from the EL element 142 is reflected by the wire grid polarizer 250 and enters the EL element 142 again. The light that re-enters the EL element 142 is scattered by the light scattering layer 251 and the polarization axis becomes random. Then, it is emitted from the EL element 142 again, a part of which passes through the wire grid polarizer 250 and is emitted to the outside, and the remaining components are reflected. By providing the wire grid polarizer 250 and the light scattering layer 251 in this way, the light emitted from the EL element 142 can be multiply reflected, and the polarization axis of the emitted light can be converged in one direction.

[0234] Although not shown in FIG. 56, in the display device 100 with a touch and fingerprint sensor, a polarization axis rotating plate is provided on the display screen side to improve the contrast. The polarization axis rotating plate is a combination of a linear polarizing plate and a 1 / 2 retardation plate, and the linear polarization axis and the 1 / 2 retardation axis are combined in a state where they are inclined by 45 degrees. At this time, as shown in FIG. 60, by arranging the linear polarization axis of the polarization axis rotating plate at an angle of 45 degrees with respect to the transmission polarization axis of the wire grid polarizer 250, the extraction efficiency of the light emitted from the EL element 142 can be greatly improved.

[0235] The direction of the transmission polarization axis of the wire grid polarizer 250 can be freely set by changing the direction in which the metal fine wires 258 extend. FIG. 61 shows an example in which a pattern of the metal fine wires 258 is provided in the region surrounded by the scanning signal line 106 and the data signal line 108 (the region of the sub-pixel 105). As shown in FIG. 61, since the metal fine wires 258 have a pattern extending in a direction parallel to the direction in which the scanning signal line 106 extends, the transmission polarization axis is arranged in a direction parallel to the direction in which the data signal line 108 extends. Although not shown, the metal fine wires 258 may have a pattern extending in a direction parallel to the direction in which the data signal line 108 extends. FIG. 62 shows an example in which, since the pattern of the metal fine wires 258 is arranged at a predetermined angle with respect to the scanning signal line 106 and the data signal line 108, the transmission polarization axis is arranged in a direction perpendicular to the longitudinal direction of the metal fine wires 258.

[0236] FIG. 57 shows an example in which the wire grid polarizer 250 is provided so as to be embedded in the planarization layer 246. The metal fine wires 258 are formed to have a thickness of about 100 nm to 200 nm. By providing the metal fine wires 258 so as to be embedded in the planarization film 246, even if the wire grid polarizer 250 is provided in a so-called in-cell form, the EL element 142 can be provided without impairing the flatness.

[0237] FIG. 66 shows an example in which the wire grid polarizer 250 is provided on the upper surface of the first electrode 220. The metal fine wires 258 and the light absorption layer 256 constituting the wire grid polarizer 250 are formed on the transparent conductive film forming the first electrode 220. Although the metal fine wires 258 and the light absorption layer 256 form an uneven structure on the upper surface of the first electrode 220, by providing the electron transport layer 222 with a coating-type material so as to embed the metal fine wires 258, the light emitting layer 226 can be prevented from being affected and a short circuit with the second electrode 232 can be prevented.

[0238] FIG. 67 shows a plan view of the first electrode 220 and the metal fine wire 258. The metal fine wire 258 is provided on the transparent conductive film forming the first electrode 220. The metal fine wire 258 is formed so as to extend from one end side to the other end side of the first electrode 220. Further, as shown in FIG. 67, a metal pattern surrounding the outer periphery of the first electrode 238 is provided with a metal film forming the metal fine wire 258, and by connecting the metal fine wires 258, the low resistance of the transparent conductive film (first electrode 220) can be achieved.

[0239] As shown in this embodiment, by providing the wire grid polarizer 250 in the layer forming the touch and fingerprint sensor-equipped display device 100, even if a polarization axis rotating plate is provided to improve the contrast, the light extraction efficiency can be greatly improved.

[0240] [Tenth Embodiment] This embodiment shows a further variation of the sealing structure and the structure of the lead wiring shown in the first embodiment.

[0241] FIG. 63A shows a structure in which the second sensor electrode 114 is connected to a wiring or a circuit on the transparent resin substrate 200 by a lead wiring 147 formed in the same layer as the data signal line 108. The lead wiring 147 is provided on the first insulating layer 210 and is connected to a contact hole 159 penetrating the first insulating layer 210, the fourth transparent resin layer 202d, and the third transparent resin layer 202c. A second insulating layer 212 is provided on the first lead wiring 147 and the first contact hole 159, and is further covered with a silicon nitride film 214c, so that intrusion of moisture from the outside can be prevented.

[0242] FIG. 63B shows a structure in which the second sensor electrode 114 is connected to a wiring or circuit on the transparent resin substrate 200 by a lead wiring 147 formed in the same layer as the scanning signal line 106 or the second scanning signal line 107. This lead wiring 147 is provided on the second insulating layer 212 and is connected to a first lead wiring 147a formed in the same layer as the shield electrode 116 on the third transparent resin layer 202c through a contact hole 159 penetrating the second insulating layer 212, the first insulating layer 210, and the fourth transparent resin layer 202d. Further, the first lead wiring 147a is connected to the second sensor electrode 114 through a contact hole 169 formed in the third transparent resin layer 202c. Even with such a structure, the second sensor electrode 114 can be connected to a wiring or circuit on the transparent resin substrate 200.

[0243] FIG. 64A shows a structure in which the lead wiring 147 is provided on the second insulating layer 212 with respect to the structure shown in FIG. 22A. The lead wiring 147 is formed in the same layer as the second scanning signal line 107. Since the upper part of the lead wiring 147 is covered with the silicon nitride film 214c, even if the lead wiring 147 has a structure extending outward so as to form the second connection terminal 146b, a structure in close contact with the sealing layer 236 can be formed, and the reliability can be improved.

[0244] FIG. 64B shows a connection structure between the second electrode 232 and the third connection terminal 146c. The second electrode 232 is drawn out to the end of the transparent resin substrate 200 and is connected to a lead wiring 147 formed in the same layer as the second scanning signal line 107. The lead wiring 147 has a structure extending outward so as to form the third connection terminal 146c. Also in this structure, since the lead wiring 147 is covered with the silicon nitride film 214c, a structure in close contact with the sealing layer 236 can be formed, and the reliability can be improved.

[0245] FIG. 65A shows the connection structure between the data signal line 108 and the first connection terminal 146a. The data signal line 108 is drawn out at the end of the transparent resin substrate 200 and is connected to a lead wiring 147 formed in the same layer as the second scanning signal line 107. This lead wiring 147 has a structure that extends outward to form the first connection terminal 146a. Even in this structure, since the lead wiring 147 is covered with the silicon nitride film 214c, a structure that is in close contact with the sealing layer 236 can be formed, and the reliability can be improved.

[0246] FIG. 65B shows a structure in which, with respect to FIG. 63B, the lead wiring 147 is directly connected to the second sensor electrode 114 through a contact hole 159 that penetrates the second insulating layer 212, the first insulating layer 210, the fourth transparent resin layer 202d, and the third transparent resin layer 202c. Even with such a configuration, the second sensor electrode 114 can be connected to the wiring or circuit on the transparent resin substrate 200.

[0247] In FIGS. 16, 19, 21, 49, 53, and 55, external light incident from the outside into the display panel is reflected by various metals constituting the display panel and then emitted back to the outside again, resulting in a significant decrease in contrast. In order to prevent such a decrease in contrast, in practice, a circular polarizing plate (an optical member formed by combining a linear polarizing plate and a quarter-wave plate) is installed in close contact with the transparent resin layer 202a, but it is omitted in the above drawings.

[0248] FIGS. 56, 57, and 66 show a display panel incorporating a wire grid polarizer 250 in order to improve the light extraction efficiency. However, when external light is incident, it is reflected by various electrodes and wirings formed of a metal material constituting the display panel and then emitted back to the outside again, resulting in a significant decrease in contrast. In order to prevent such a decrease in contrast, it is preferable that a light absorption layer similar to the light absorption layer 256 constituting the wire grid polarizer 250 is provided under the electrodes and wirings formed of the metal material constituting the display panel, but it is omitted in the above drawings.

Description of Reference Numerals

[0249] 100 ··· Display device with touch and fingerprint sensor, 102 ··· Display unit, 104 ··· Pixel, 105 ··· Sub-pixel, 106 ··· Scanning signal line, 107 ··· Second scanning signal line, 108 ··· Data signal line, 110 ··· Touch and fingerprint sensor unit, 112 ··· First sensor electrode, 114 ··· Second sensor electrode, 116 ··· Shield electrode, 118 ··· First drive circuit, 118b ··· Output switching circuit, 118c ··· Scanning signal line drive circuit, 118d ··· Scan circuit, 120 ··· Switching circuit, 122 ··· Terminal unit, 124 ··· Sealing layer, 125 ··· Driver IC, 126 ··· Flexible circuit board, 127 ··· Film base material, 128 ··· Second drive circuit, 129 ··· Wiring group, 130 ··· Scanning signal line drive circuit block, 132 ··· Data signal line drive circuit block, 134 ··· Touch and fingerprint sensor detection circuit block, 135 ··· Pad, 136 ··· Drive transistor, 137 ··· Light emission control transistor, 138 ··· Selection transistor (first transistor), 139 ··· Second transistor, 140 ··· Capacitive element, 142 ··· EL element, 141 ··· First switching element, 143 ··· Output switching signal line, 144a ··· Common electrode, 144b ··· Common wiring, 145 ··· Second switching element, 146 ··· Connection terminal, 147 ··· Lead wiring, 148 ··· Connection terminal, 149 ··· Sixth connection terminal, 150 ··· First gate electrode, 151 ··· Second gate electrode, 152 ··· First gate electrode, 153 ··· Second gate electrode, 154 ··· Power supply line, 156 ··· Switching element, 157 ··· Control signal line, 158 ··· First opening, 159 ··· First contact hole, 160 ··· Second opening, 161 ··· Second contact hole, 162 ··· Third opening, 163 ··· Third contact hole, 164 ··· Fourth opening, 165 ··· Fourth contact hole, 166 ··· Fifth contact hole, 168 ··· Seventh contact hole, 169 ··· Contact hole, 170 ··· Source wiring, 171 ··· Eighth contact hole, 172 ··· Connection wiring, 173 ··· Drain wiring, 174 ··· Source electrode, 175 ··· Ninth contact hole, 176 ··· Metal oxide conductive layer, 180 ··· Oxide semiconductor layer, 200 ··· Transparent resin substrate, 202 ··· Transparent resin layer204 ··· First sensor electrode layer, 205 ··· First auxiliary electrode, 206 ··· Second sensor electrode layer, 207 ··· Second auxiliary electrode, 208 ··· Light-shielding layer, 210 ··· First insulating layer, 212 ··· Second insulating layer, 214 ··· Silicon nitride film, 215 ··· Silicon oxide film, 216 ··· Third insulating layer, 220 ··· First electrode, 222 ··· Electron transport layer, 224 ··· Electron injection layer, 226 ··· Light-emitting layer, 227 ··· Electron blocking layer, 228 ··· Hole transport layer, 230 ··· Hole injection layer, 232 ··· Second electrode, 234 ··· Third opening, 236 ··· Encapsulation layer, 237 ··· Silicon carbonitride film, 238 ··· Silicon nitride film, 240 ··· Division region, 242 ··· Conductive particles, 244 ··· Resin, 246 ··· Planarization layer, 248 ··· Passivation layer, 250 ··· Wire grid polarizer, 251 ··· Light scattering layer, 252 ··· Beads, 254 ··· Adhesive ink, 256 ··· Light absorption layer, 258 ··· Metal fine wire, 260 ··· Insulating layer, 262 ··· Partition wall, 264 ··· Eighth contact hole, 266 ··· First gate electrode, 268 ··· Second gate electrode, 270 ··· Second capacitor element, 272 ··· Capacitor electrode, 274 ··· Second capacitor element,

Claims

1. A plurality of data signal lines, a plurality of scanning signal lines intersecting the plurality of data signal lines, at least one first sensor electrode, at least one second sensor electrode intersecting the first sensor electrode, a display unit including the same, a terminal unit including a first terminal and a second terminal, a switching circuit disposed between the display unit and the terminal unit, having one input end and a plurality of output ends, and distributing an input signal input to the one input end to the plurality of output ends, a wire grid polarizer disposed overlapping the display unit, a shield electrode between the plurality of data signal lines and the at least one second sensor electrode and, including, the switching circuit has its input side connected to the first terminal, and the plurality of data signal lines are connected to the plurality of output ends, the at least one first sensor electrode is connected to the second terminal, the wire grid polarizer is disposed sandwiched between layers between the data signal lines and the at least one second sensor electrode and, the shield electrode is formed of a transparent conductive film made of a metal nitride or a metal oxide, the wire grid polarizer has a function of preventing mirroring of the display unit, and is formed of metal fine wires and a light absorption layer laminated on the metal fine wires, and the light absorption layer is provided on the side of the second sensor electrode and, the shield electrode extends into the region of the terminal unit and overlaps the terminal unit, characterized in that it is a touch and fingerprint sensor-equipped display device.

2. The display unit includes a plurality of first sub-pixels arranged in a first direction, a plurality of second sub-pixels arranged in the first direction adjacent to the arrangement of the plurality of first sub-pixels, and a plurality of third sub-pixels arranged in the first direction adjacent to the arrangement of the plurality of second sub-pixels. The plurality of data signal lines include a first data signal line arranged corresponding to the arrangement of the first sub-pixels, a second data signal line arranged corresponding to the arrangement of the second sub-pixels, and a third data signal line arranged corresponding to the arrangement of the third sub-pixels. The first data signal line, the second data signal line, and the third data signal line are connected to the plurality of output ends of the switching circuit. The touch and fingerprint sensor-equipped display device according to Claim 1.

3. A first circuit block in which the first to third data signal lines, the switching circuit, and the first terminal are grouped together, and a second circuit block in which the first sensor electrode and the second terminal are grouped together, each having a plurality. ​ ​ ​ ​ ​ ​ ​ ​ The touch and fingerprint sensor-equipped display device according to claim 2, wherein the first circuit block and the second circuit block are alternately arranged. The touch and fingerprint sensor-equipped display device according to claim 2, wherein the first circuit block and the second circuit block are alternately arranged.

4. The touch and fingerprint sensor-equipped display device according to claim 1, further comprising: a first driving circuit connected to the plurality of scanning signal lines and the at least one second sensor electrode. The touch and fingerprint sensor-equipped display device according to claim 1, further comprising: a first driving circuit connected to the plurality of scanning signal lines and the at least one second sensor electrode.

5. The first driving circuit according to claim 4, wherein the first driving circuit includes an output switching circuit that switches the connection between the scanning signal line and the second sensor electrode. The touch and fingerprint sensor-equipped display device according to claim 4, wherein the first driving circuit includes an output switching circuit that switches the connection between the scanning signal line and the second sensor electrode.

6. The at least one second sensor electrode includes a plurality of second sensor electrodes, and a plurality of auxiliary electrodes provided corresponding to each of the plurality of second sensor electrodes, and the plurality of auxiliary electrodes also serve as the plurality of scanning signal lines. The touch and fingerprint sensor-equipped display device according to claim 4. the plurality of auxiliary electrodes also serve as the plurality of scanning signal lines. The touch and fingerprint sensor-equipped display device according to claim 4.

7. A flexible circuit board connected to the first terminal and the second terminal, and a second driving circuit mounted on the flexible circuit board. The touch and fingerprint sensor-equipped display device according to claim 1. a second driving circuit mounted on the flexible circuit board. The touch and fingerprint sensor-equipped display device according to claim 1.

8. The second driving circuit according to claim 7, wherein the second driving circuit includes a data signal line driving circuit block, a touch and fingerprint sensor detection circuit block, and a scanning signal line driving circuit block. The second driving circuit according to claim 7, wherein the second driving circuit includes a data signal line driving circuit block, a touch and fingerprint sensor detection circuit block, and a scanning signal line driving circuit block. The touch and fingerprint sensor-equipped display device according to claim 7.

9. The display unit includes at least one transistor, and a gate of the at least one transistor is connected to one of the plurality of auxiliary electrodes. The touch and fingerprint sensor-equipped display device according to claim 6. a gate of the at least one transistor is connected to one of the plurality of auxiliary electrodes. The touch and fingerprint sensor-equipped display device according to claim 6.

10. The shield electrode has an opening, and a gate of the at least one transistor is connected to one of the plurality of auxiliary electrodes through the inside of the opening. The touch and fingerprint sensor-equipped display device according to claim 9. a gate of the at least one transistor is connected to one of the plurality of auxiliary electrodes through the inside of the opening. The touch and fingerprint sensor-equipped display device according to claim 9. 。

11. There is an insulating layer between the data signal line and the at least one second sensor electrode, and the wire grid polarizer is embedded in the insulating layer. The touch and fingerprint sensor-equipped display device according to claim 1. the wire grid polarizer is embedded in the insulating layer. The touch and fingerprint sensor-equipped display device according to claim 1.

Images