Method for manufacturing a semiconductor device, light absorption laminate, and temporary fixing laminate

Abstract

A method for manufacturing a semiconductor device is disclosed, which includes, in this order: a step of processing a semiconductor member temporarily fixed to a support member via a temporary fixing material layer; and a step of irradiating the temporary fixing laminate with incoherent light from the support member side, thereby separating the semiconductor member from the support member. Part or all of the temporary fixing material layer is a light absorbing layer that absorbs light and generates heat. The support member has a transmittance of 90% or more for incoherent light. The temporary fixing material layer has a transmittance of 3.1% or less for incoherent light.

Description

Technical Field

[0001] The present invention relates to a method for manufacturing a semiconductor device, a light absorption laminate, and a temporary fixing laminate.

Background Art

[0002] In the manufacture of semiconductor elements, after integrating an integrated circuit into a semiconductor member such as a semiconductor wafer, the semiconductor member may be processed. The semiconductor member is subjected to processing such as, for example, back grinding or dicing. The semiconductor member is usually processed while being temporarily fixed to a support member, and then the semiconductor member is separated from the support member. For example, Patent Document 1 discloses a method of separating a semiconductor member from a support member by temporarily fixing the semiconductor member to the support member via a temporary fixing material layer and physically separating the semiconductor member from the support member while heating after the processing. Patent Documents 2 and 3 disclose methods of separating a semiconductor member from a support member by irradiating a laser to the temporary fixing material layer.

Prior Art Documents

Patent Documents

[0003]

Patent Document 1

Patent Document 2

Patent Document 3

Summary of the Invention

Problems to be Solved by the Invention

[0004] The present invention relates to a method for manufacturing a semiconductor device including a step of processing a semiconductor member temporarily fixed to a support member, and provides a method capable of easily separating the processed semiconductor member from the support member by a simple process.

Means for Solving the Problems

[0005] A method for manufacturing a semiconductor device according to one aspect of the present invention includes: preparing a temporary fixing laminate including a support member and a temporary fixing material layer provided on the support member, the temporary fixing material layer having a curable resin layer including at least one outermost surface of the temporary fixing material layer; temporarily fixing a semiconductor substrate and a semiconductor member having a redistribution layer provided on one surface side of the semiconductor substrate to the support member via the temporary fixing material layer with the redistribution layer positioned on the curable resin layer side; processing the semiconductor member temporarily fixed to the support member; irradiating the temporary fixing laminate with incoherent light from the support member side to separate the semiconductor member from the support member; and including these steps in this order. The temporary fixing material layer has a light absorption layer that absorbs light and generates heat. The light absorption layer is provided as part of the curable resin layer or as a layer separate from the curable resin layer. The transmittance of the support member with respect to the incoherent light is 90% or more. The transmittance of the temporary fixing material layer with respect to the incoherent light is 3.1% or less.

[0006] According to the above method, the processed semiconductor member can be easily separated from the support member by a simple process of irradiating incoherent light. Irradiation with incoherent light can easily secure a large irradiation area compared to irradiation with laser light, which is coherent light, and thus can be performed simply. By including a combination of a support member and a light absorption layer in which the temporary fixing material layer has a specific transmittance, even irradiation with incoherent light can put the semiconductor member in a state where it can be easily separated from the support member.

Advantages of the Invention

[0007] According to the present invention, regarding a method for manufacturing a semiconductor device including a step of processing a semiconductor member temporarily fixed to a support member, a method is provided in which the processed semiconductor member can be easily separated from the support member by a simple process. The method of the present invention can easily separate the processed semiconductor member from the support member even with incoherent light having a relatively small amount of energy. By using incoherent light with a small amount of energy, damage to fine structures such as the rewiring layer of the semiconductor member can be suppressed.

Brief Description of the Drawings

[0008]

Figure 1

Figure 2

Figure 3

Figure 4

Figure 5

Embodiments for Carrying Out the Invention

[0009] Hereinafter, some embodiments of the present invention will be described in detail. However, the present invention is not limited to the following embodiments.

[0010] The sizes of the components in each figure referred to in this specification are conceptual, and the relative size relationships between the components are not limited to those shown in each figure. Redundant descriptions may be omitted.

[0011] The numerical values and ranges thereof in this specification do not limit the scope of the present invention either. The numerical range indicated by "~" in this specification indicates a range including the numerical values described before and after "~" as the minimum value and the maximum value respectively. In the numerical ranges described stepwise in this specification, the upper limit value or the lower limit value described in one numerical range may be replaced with the upper limit value or the lower limit value of the numerical range described in other stepwise descriptions. In the numerical ranges described in this specification, the upper limit value or the lower limit value of the numerical range may be replaced with the value shown in the examples.

[0012] In this specification, (meth)acrylic acid means acrylic acid or its corresponding methacrylic acid. The same applies to other similar expressions such as (meth)acrylate and (meth)acryloyl group.

[0013] In order to manufacture a semiconductor device, during the processing of a semiconductor member, a temporary fixing laminate for temporarily fixing the semiconductor member to a support member is prepared. FIG. 1 is a cross-sectional view showing some embodiments of the temporary fixing laminate. The temporary fixing laminate 1 shown in FIG. 1 has a support member 10 and a temporary fixing material layer 30 provided on the support member 10. The temporary fixing material layer 30 has a curable resin layer 31. The curable resin layer 31 includes the outermost surface S on the side opposite to the support member 10 of the temporary fixing material layer 30. In addition, the temporary fixing material layer 30 has a light absorption layer 32 provided as a layer separate from the curable resin layer 31, or a light absorption layer 31B provided as a part of the curable resin layer 31. The light absorption layers 32, 31B are layers that absorb light and generate heat.

[0014] The temporary fixing material layer 30 of the temporary fixing laminate 1 shown in FIG. 1(a) has a curable resin layer 31 including the outermost surface S on the side opposite to the support member 10 and a light absorption layer 32 provided as a layer separate from the curable resin layer 31. In other words, the light absorption layer 32 and the curable resin layer 31 are laminated in this order on the support member 10.

[0015] The temporary fixing material layer 30 of the temporary fixing laminate 1 shown in FIG. 1(b) is composed of a curable resin layer 31 that includes a light absorption layer 31B as a part thereof. The curable resin layer 31 here has a light absorption layer 31B including the outermost surface S and a substantially non-heat-generating curable resin layer 31A provided on the support member 10 side of the light absorption layer 31B.

[0016] In the case of the temporary fixing material layer 30 of the temporary fixing laminate 1 shown in FIG. 1(c), in addition to the light absorption layer 31B similar to that in FIG. 1(b), a light absorption layer 32 is further provided as a layer different from the curable resin layer 31. Instead of the light absorption layer 32 provided as a layer different from the curable resin layer 31, a light absorption layer constituting a part of the curable resin layer 31 may be further provided between the curable resin layer 31A and the support member 10.

[0017] The temporary fixing laminate 1 can be obtained, for example, by sequentially forming each layer on the support member 10. A laminated film having a curable resin layer and a light absorption layer may be prepared and laminated on the support member 10. A light absorption laminate illustrated in FIG. 2 may be prepared and used to obtain the temporary fixing laminate 1. The light absorption laminate 3 shown in FIG. 2 has a support member 10 and a light absorption layer 32 provided on the support member 10. The light absorption layer 32 may be a metal layer adjacent to the support member 10. The transmittance of the metal layer as the light absorption layer 32 with respect to the incoherent light irradiated from a xenon lamp may be 3.1% or less, 3.0% or less, 2.5% or less, or 1.5% or less, and may also be 0% or more. The temporary fixing laminate 1 in FIG. 1 can also be regarded as a laminate composed of a light absorption laminate and a curable resin layer. For example, the temporary fixing laminate 1 in FIG. 1 can be manufactured by a method including a step of forming a curable resin layer 32 on the light absorption layer 32 of the light absorption laminate 3.

[0018] FIG. 3, FIG. 4, and FIG. 5 are process diagrams showing an embodiment of a method for manufacturing a semiconductor device using a temporary fixing laminate. Here, a method using the temporary fixing laminate 1 of FIG. 1(a) is illustrated, but a semiconductor device can also be manufactured in the same manner using a temporary fixing laminate having another configuration. The method shown in FIGS. 3 to 5 includes a step of temporarily fixing the semiconductor member 45 to the support member 10 via the temporary fixing material layer 30 (FIG. 3), a step of processing the semiconductor member 45 temporarily fixed to the support member 10 (FIG. 4(a)), a step of forming a sealing layer 50 for sealing the processed semiconductor member 45 (FIG. 4(b)), and a step of irradiating the temporary fixing laminate 1 with incoherent light A from the support member 10 side to separate the semiconductor member 45 from the support member 10 (FIG. 4(b)) in this order. The semiconductor member 45 has a semiconductor substrate 40 and a redistribution layer 41 provided on one surface side of the semiconductor substrate 40. The semiconductor member 45 is disposed on the curable resin layer 31 in a direction in which the redistribution layer 41 is located on the curable resin layer 31 side. The step of temporarily fixing the semiconductor member 45 to the support member 10 via the temporary fixing material layer 30 may include disposing the semiconductor member 45 on the curable resin layer 31 in a direction in which the redistribution layer 41 is located on the curable resin layer 31 side, and curing the curable resin layer 31.

[0019] The support member 10 and the temporary fixing material layer 30 that constitute the temporary fixing laminate 1 have a specific transmittance for incoherent light irradiated onto the temporary fixing laminate 1. The transmittance of the support member 10 for incoherent light is 90% or more. The transmittance of the temporary fixing material layer 30 for incoherent light is 3.1% or less. Due to the high transmittance of the support member 10 and the low transmittance of the temporary fixing material layer 30, even when irradiated with incoherent light having a low energy amount, the semiconductor member 45 can be easily separated from the support member 10. When the energy amount of the incoherent light is low, the redistribution layer 41 or other peripheral members of the semiconductor member 45 are less likely to be damaged by the light irradiation. From the same viewpoint, the transmittance of the support member 10 for incoherent light may be 60% or more, or 70% or more, and may be 100% or less. The transmittance of the temporary fixing material layer 30 for incoherent light may be 3.0% or less, 2.5% or less, or 1.5% or less, and may be 0% or more.

[0020] The support member 10 is a plate-like body having a high transmittance and capable of withstanding the load received during the processing of the semiconductor member 45. Examples of the support member 10 include an inorganic glass substrate and a transparent resin substrate.

[0021] The thickness of the support member 10 may be, for example, 0.1 to 2.0 mm. When the thickness of the support member 10 is 0.1 mm or more, handling tends to be easy. When the thickness of the support member 10 is 2.0 mm or less, the material cost can tend to be suppressed.

[0022] The outermost surface S on the side where the semiconductor member 45 of the temporary fixing material layer 30 is temporarily fixed is the surface of the curable resin layer 31. For example, by curing the curable resin layer 31 in a state where the semiconductor member 45 is placed on the curable resin layer 31, the semiconductor member 45 can be temporarily fixed to the support member 10. In other words, the semiconductor member 45 can be temporarily adhered to the support member 10 via the temporary fixing material layer 30 having the cured curable resin layer 31c.

[0023] The light absorption layer 32 is a layer that absorbs light and generates heat. By providing the light absorption layer 32, the temporary fixing material layer 30 can easily have a low transmittance.

[0024] The curable resin layer 31 is a layer containing a curable resin composition that cures by heat or light. The curable resin layer 31 before curing has an adhesiveness that allows the semiconductor member 45 to be attached by pressure bonding or the like. The cured curable resin layer 31c holds the semiconductor member 45 while the semiconductor member 45 is being processed. In this specification, all components other than the conductive particles constituting the curable resin layer 31 are regarded as components of the curable resin composition.

[0025] From the viewpoint of stress relaxation, the thickness of the curable resin layer 31 may be, for example, 50 μm or less, 40 μm or less, or 30 μm or less and 0.1 μm or more, or may be 50 μm or less, 40 μm or less, or 30 μm or less and 1 μm or more.

[0026] The storage elastic modulus of the cured curable resin layer 31c at 25°C may be 5 to 100 MPa. When the storage elastic modulus of the cured curable resin layer 31c at 25°C is 5 MPa or more, it is easy to hold the semiconductor member 45 without the support member 10 bending. Also, when the semiconductor member 45 is separated from the support member, the curable resin layer 31c tends to hardly leave a residue on the semiconductor member 45. When the storage elastic modulus of the cured curable resin layer 31c at 25°C is 100 MPa or less, the displacement of the semiconductor member 45 tends to be small. From the same viewpoint, the storage elastic modulus of the cured curable resin layer 31c at 25°C may be 5.5 MPa or more, 6 MPa or more, or 6.3 MPa or more and 100 MPa or less, may be 5.5 MPa or more, 6 MPa or more, or 6.3 MPa or more and 90 MPa or less, may be 5.5 MPa or more, 6 MPa or more, or 6.3 MPa or more and 80 MPa or less, may be 5.5 MPa or more, 6 MPa or more, or 6.3 MPa or more and 70 MPa or less, may be 5.5 MPa or more, 6 MPa or more, or 6.3 MPa or more and 65 MPa or less. In this specification, the storage elastic modulus of the cured curable resin layer 31c means a value obtained by viscoelasticity measurement measured under the conditions of a temperature increase rate of 5°C / min, a frequency of 1 Hz, and a tensile mode.

[0027] The storage elastic modulus of the cured curable resin layer 31c at 25°C can be increased, for example, by methods such as increasing the content of the hydrocarbon resin described later, applying a hydrocarbon resin having a high Tg, or adding an insulating filler to the curable resin composition.

[0028] The storage elastic modulus of the cured curable resin layer 31c at 250°C may be 0.70 MPa or more, 0.80 MPa or more, 0.85 MPa or more, or 0.90 MPa or more and 2.00 MPa or less, may be 0.70 MPa or more, 0.80 MPa or more, 0.85 MPa or more, or 0.90 MPa or more and 2.00 MPa or less, may be 0.70 MPa or more, 0.80 MPa or more, 0.85 MPa or more, or 0.90 MPa or more and 1.90 MPa or less, may be 0.70 MPa or more, 0.80 MPa or more, 0.85 MPa or more, or 0.90 MPa or more and 1.80 MPa or less, may be 0.70 MPa or more, 0.80 MPa or more, 0.85 MPa or more, or 0.90 MPa or more and 1.75 MPa or less.

[0029] The curable resin composition constituting the curable resin layer 31 may contain a thermosetting resin and a hydrocarbon resin. The hydrocarbon resin is a resin whose main skeleton is composed of hydrocarbons. When the curable resin composition contains a hydrocarbon resin, it is easy to attach the semiconductor member 45 to the curable resin layer 31 at a low temperature.

[0030] From the viewpoint of the low-temperature adhesiveness of the curable resin layer 31, the glass transition temperature (Tg) of the hydrocarbon resin may be 50°C or less. From the viewpoint of good peelability of the curable resin layer 31, the Tg of the hydrocarbon resin may be -100°C or more, or -50°C or more.

[0031] The Tg of the hydrocarbon resin is the midpoint glass transition temperature value obtained by differential scanning calorimetry (DSC). Specifically, the Tg of the hydrocarbon resin is the midpoint glass transition temperature calculated by measuring the heat change under the conditions of a heating rate of 10°C / min and a measurement temperature of -80 to 80°C and by a method conforming to JIS K 7121.

[0032] The hydrocarbon resin contains at least one selected from the group consisting of, for example, ethylene-propylene copolymers, ethylene-1-butene copolymers, ethylene-propylene-1-butene copolymer elastomers, ethylene-1-hexene copolymers, ethylene-1-octene copolymers, ethylene-styrene copolymers, ethylene-norbornene copolymers, propylene-1-butene copolymers, ethylene-propylene-non-conjugated diene copolymers, ethylene-1-butene-non-conjugated diene copolymers, ethylene-propylene-1-butene-non-conjugated diene copolymers, polyisoprene, polybutadiene, styrene-butadiene-styrene block copolymers (SBS), styrene-isoprene-styrene block copolymers (SIS), styrene-ethylene-butylene-styrene block copolymers (SEBS), styrene-ethylene-propylene-styrene block copolymers (SEPS), and hydrogenated products thereof. These hydrocarbon resins may have a carboxyl group. The carboxyl group is introduced, for example, by modification using maleic anhydride or the like. The hydrocarbon resin may contain a styrenic resin containing monomer units derived from styrene. The styrenic resin may be a styrene-ethylene-butylene-styrene block copolymer (SEBS).

[0033] The weight average molecular weight (Mw) of the hydrocarbon resin may be 10,000 to 5,000,000 or 100,000 to 2,000,000. When the weight average molecular weight is 10,000 or more, it tends to be easy to ensure the heat resistance of the temporary fixing material layer 30. When the weight average molecular weight is 5,000,000 or less, it tends to be easy to suppress the decrease in the flow and the adhesiveness of the temporary fixing material layer 30. The weight average molecular weight here is a polystyrene conversion value using a calibration curve with standard polystyrene by gel permeation chromatography (GPC).

[0034] The content of the hydrocarbon resin may be 40 parts by mass or more, 50 parts by mass or more, or 60 parts by mass or more and 90 parts by mass or less, 40 parts by mass or more, 50 parts by mass or more, or 60 parts by mass or more and 85 parts by mass or less, or 40 parts by mass or more, 50 parts by mass or more, or 60 parts by mass or more and 80 parts by mass or less, based on 100 parts by mass of the total mass of the curable resin composition constituting the curable resin layer 31. When the content of the hydrocarbon resin is within these numerical ranges, it tends to be easy to form a thin and flat curable resin layer 31. Further, the curable resin layer 31 tends to have good adhesiveness at low temperatures and an appropriate storage elastic modulus after curing.

[0035] The thermosetting resin is a component that cures the curable resin composition by a thermosetting reaction. The thermosetting reaction can be a reaction between a thermosetting resin and a curing agent, self-polymerization of the thermosetting resin, or a combination thereof. Examples of the thermosetting resin include epoxy resins, acrylic resins, silicone resins, phenolic resins, thermosetting polyimide resins, polyurethane resins, melamine resins, and urea resins. These may be used alone or in combination of two or more. Since the thermosetting resin is excellent in heat resistance, workability, and reliability, it may contain an epoxy resin.

[0036] An epoxy resin is a compound having one or more epoxy groups. The epoxy resin may have two or more epoxy groups. Examples of the epoxy resin having two or more epoxy groups include bisphenol A type epoxy resins, novolak type epoxy resins (such as phenol novolak type epoxy resins), glycidylamine type epoxy resins, heterocyclic ring-containing epoxy resins, and alicyclic epoxy resins.

[0037] The curable resin composition may contain a thermosetting resin and its curing agent. The total content of the thermosetting resin and its curing agent may be 10 parts by mass or more, 15 parts by mass or more, or 20 parts by mass or more and 60 parts by mass or less, 10 parts by mass or more, 15 parts by mass or more, or 20 parts by mass or more and 50 parts by mass or less, or 10 parts by mass or more, 15 parts by mass or more, or 20 parts by mass or more and 40 parts by mass or less with respect to 100 parts by mass of the total mass of the curable resin composition. When the total content of the thermosetting resin and its curing agent is within these ranges, there is a tendency that a thin and flat curable resin layer can be easily formed, and the heat resistance of the cured curable resin layer 31c is more excellent.

[0038] When an epoxy resin is used as the thermosetting resin, the curable resin composition may contain a curing agent for the epoxy resin. The curing agent for the epoxy resin is not particularly limited, and examples thereof include amines, polyamides, acid anhydrides, polysulfides, boron trifluoride, bisphenols (bisphenol A, bisphenol F, bisphenol S, etc.), and phenol resins (phenol novolak resins, bisphenol A novolak resins, cresol novolak resins, phenol aralkyl resins, etc.).

[0039] The curable resin composition may further contain a curing accelerator that promotes the curing reaction of a thermosetting resin such as an epoxy resin. Examples of the curing accelerator include imidazole compounds, dicyandiamide, dicarboxylic acid dihydrazide, triphenylphosphine, tetraphenylphosphonium tetraphenylborate, 2-ethyl-4-methylimidazole-tetraphenylborate, and 1,8-diazabicyclo[5,4,0]undecene-7-tetraphenylborate. These may be used alone or in combination of two or more.

[0040] The content of the curing accelerator may be 0.01 to 5 parts by mass with respect to 100 parts by mass of the total amount of the thermosetting resin and the curing agent. When the content of the curing accelerator is within this range, the curability of the curable resin layer and the heat resistance after curing tend to be more excellent.

[0041] The curable resin composition constituting the curable resin layer 31 may contain a polymerizable monomer having a polymerizable unsaturated group and a polymerization initiator. Also in this case, the curable resin composition may further contain the above-described hydrocarbon resin.

[0042] The polymerizable monomer is a compound having a polymerizable unsaturated group such as an ethylenically unsaturated group. The polymerizable monomer may be monofunctional, difunctional, or trifunctional or higher, but from the viewpoint of obtaining sufficient curability, a difunctional or higher polymerizable monomer may be used. Examples of the polymerizable monomer include (meth)acrylate, vinylidene halide, vinyl ether, vinyl ester, vinyl pyridine, vinyl amide, and arylated vinyl. The polymerizable monomer may be (meth)acrylate or (meth)acrylic acid. The (meth)acrylate may be monofunctional (meth)acrylate, difunctional (meth)acrylate, polyfunctional (meth)acrylate having trifunctionality or higher, or a combination thereof.

[0043] Examples of monofunctional (meth)acrylates include aliphatic (meth)acrylates such as methyl (meth)acrylate, ethyl (meth)acrylate, butyl (meth)acrylate, isobutyl (meth)acrylate, tert-butyl (meth)acrylate, butoxyethyl (meth)acrylate, isoamyl (meth)acrylate, hexyl (meth)acrylate, 2-ethylhexyl (meth)acrylate, heptyl (meth)acrylate, octylheptyl (meth)acrylate, nonyl (meth)acrylate, decyl (meth)acrylate, 2-hydroxyethyl (meth)acrylate, 2-hydroxypropyl (meth)acrylate, 3-chloro-2-hydroxypropyl (meth)acrylate, 2-hydroxybutyl (meth)acrylate, methoxypolyethylene glycol (meth)acrylate, ethoxypolyethylene glycol (meth)acrylate, methoxypolypropylene glycol (meth)acrylate, ethoxypolypropylene glycol (meth)acrylate, and mono(2-(meth)acryloyloxyethyl) succinate; and aromatic (meth)acrylates such as benzyl (meth)acrylate, phenyl (meth)acrylate, o-biphenyl (meth)acrylate, 1-naphthyl (meth)acrylate, 2-naphthyl (meth)acrylate, phenoxyethyl (meth)acrylate, p-cumylphenoxyethyl (meth)acrylate, o-phenylphenoxyethyl (meth)acrylate, 1-naphthoxyethyl (meth)acrylate, 2-naphthoxyethyl (meth)acrylate, phenoxypolyethylene glycol (meth)acrylate, nonylphenoxypolyethylene glycol (meth)acrylate, phenoxypolypropylene glycol (meth)acrylate, 2-hydroxy-3-phenoxypropyl (meth)acrylate, 2-hydroxy-3-(o-phenylphenoxy)propyl (meth)acrylate, 2-hydroxy-3-(1-naphthoxy)propyl (meth)acrylate, and 2-hydroxy-3-(2-naphthoxy)propyl (meth)acrylate.

[0044] Examples of bifunctional (meth)acrylates include aliphatic (meth)acrylates such as ethylene glycol di(meth)acrylate, diethylene glycol di(meth)acrylate, triethylene glycol di(meth)acrylate, tetraethylene glycol di(meth)acrylate, polyethylene glycol di(meth)acrylate, propylene glycol di(meth)acrylate, dipropylene glycol di(meth)acrylate, tripropylene glycol di(meth)acrylate, tetrapropylene glycol di(meth)acrylate, polypropylene glycol di(meth)acrylate, ethoxylated polypropylene glycol di(meth)acrylate, 1,3 - butanediol di(meth)acrylate, 1,4 - butanediol di(meth)acrylate, neopentyl glycol di(meth)acrylate, 3 - methyl - 1,5 - pentanediol di(meth)acrylate, 1,6 - hexanediol di(meth)acrylate, 2 - butyl - 2 - ethyl - 1,3 - propanediol di(meth)acrylate, 1,9 - nonanediol di(meth)acrylate, 1,10 - decanediol di(meth)acrylate, glycerin di(meth)acrylate, tricyclodecane dimethanol (meth)acrylate, and ethoxylated 2 - methyl - 1,3 - propanediol di(meth)acrylate; and aromatic (meth)acrylates such as ethoxylated bisphenol A di(meth)acrylate, propoxylated bisphenol A di(meth)acrylate, ethoxylated propoxylated bisphenol A di(meth)acrylate, ethoxylated bisphenol F di(meth)acrylate, propoxylated bisphenol F di(meth)acrylate, ethoxylated propoxylated bisphenol F di(meth)acrylate, ethoxylated fluorene - type di(meth)acrylate, propoxylated fluorene - type di(meth)acrylate, and ethoxylated propoxylated fluorene - type di(meth)acrylate.

[0045] Examples of polyfunctional (meth)acrylates having three or more functional groups include aliphatic (meth)acrylates such as trimethylolpropane tri(meth)acrylate, ethoxylated trimethylolpropane tri(meth)acrylate, propoxylated trimethylolpropane tri(meth)acrylate, ethoxylated propoxylated trimethylolpropane tri(meth)acrylate, pentaerythritol tri(meth)acrylate, ethoxylated pentaerythritol tri(meth)acrylate, propoxylated pentaerythritol tri(meth)acrylate, ethoxylated propoxylated pentaerythritol tri(meth)acrylate, pentaerythritol tetra(meth)acrylate, ethoxylated pentaerythritol tetra(meth)acrylate, propoxylated pentaerythritol tetra(meth)acrylate, ethoxylated propoxylated pentaerythritol tetra(meth)acrylate, ditrimethylolpropane tetraacrylate, and dipentaerythritol hexa(meth)acrylate; and aromatic epoxy (meth)acrylates such as phenol novolac type epoxy (meth)acrylate and cresol novolac type epoxy (meth)acrylate.

[0046] These (meth)acrylates may be used alone or in combination of two or more. These (meth)acrylates may be combined with other polymerizable monomers.

[0047] The content of the polymerizable monomer may be 10 to 60 parts by mass with respect to 100 parts by mass of the mass of the curable resin composition constituting the curable resin layer 31.

[0048] A polymerization initiator is a compound that initiates a polymerization reaction of a polymerizable monomer by heating or irradiation such as ultraviolet light. For example, when the polymerizable monomer is a compound having an ethylenically unsaturated group, the polymerization initiator may be a thermal radical polymerization initiator, a photo radical polymerization initiator, or a combination thereof.

[0049] Examples of thermal radical polymerization initiators include diacyl peroxides such as octanoyl peroxide, lauroyl peroxide, stearyl peroxide, benzoyl peroxide; peroxy esters such as t-butyl peroxypivalate, t-hexyl peroxypivalate, 1,1,3,3-tetramethylbutyl peroxy-2-ethylhexanoate, 2,5-dimethyl-2,5-bis(2-ethylhexanoylperoxy)hexane, t-hexyl peroxy-2-ethylhexanoate, t-butyl peroxy-2-ethylhexanoate, t-butyl peroxyisobutyrate, t-hexyl peroxyisopropyl monocarbonate, t-butyl peroxy-3,5,5-trimethylhexanoate, t-butyl peroxylaurate, t-butyl peroxyisopropyl monocarbonate, t-butyl peroxy-2-ethylhexyl monocarbonate, t-butyl peroxybenzoate, t-hexyl peroxybenzoate, 2,5-dimethyl-2,5-bis(benzoylperoxy)hexane, t-butyl peroxyacetate; and azo compounds such as 2,2'-azobisisobutyronitrile, 2,2'-azobis(2,4-dimethylvaleronitrile), 2,2'-azobis(4-methoxy-2'-dimethylvaleronitrile).

[0050] Examples of photo radical polymerization initiators include benzoin ketals such as 2,2-dimethoxy-1,2-diphenylethane-1-one; α-hydroxy ketones such as 1-hydroxycyclohexyl phenyl ketone, 2-hydroxy-2-methyl-1-phenylpropan-1-one, 1-[4-(2-hydroxyethoxy)phenyl]-2-hydroxy-2-methyl-1-propan-1-one; and phosphine oxides such as bis(2,4,6-trimethylbenzoyl)phenylphosphine oxide, bis(2,6-dimethoxybenzoyl)-2,4,4-trimethylpentylphosphine oxide, 2,4,6-trimethylbenzoyldiphenylphosphine oxide.

[0051] These thermal and photo radical polymerization initiators may be used alone or in combination of two or more.

[0052] The content of the polymerization initiator may be 0.01 to 5 parts by mass with respect to 100 parts by mass of the total amount of the polymerizable monomers.

[0053] The curable resin composition constituting the curable resin layer 31 may further contain, as other components, an insulating filler, a sensitizer, an antioxidant, etc.

[0054] The insulating filler is added for the purpose of imparting low thermal expansibility and low moisture absorbency to the curable resin composition. Examples of the insulating filler include non-metallic inorganic fillers such as silica, alumina, boron nitride, titania, glass, and ceramic. These insulating fillers may be used alone or in combination of two or more.

[0055] The content of the insulating filler may be 5 to 20 parts by mass with respect to 100 parts by mass of the total mass of the curable resin composition constituting the curable resin layer 31. When the content of the insulating filler is within this numerical range, the cured curable resin layer 31c tends to have excellent heat resistance and good peelability.

[0056] Examples of the sensitizer include anthracene, phenanthrene, chrysene, benzopyrene, fluoranthene, rubrene, pyrene, xanthone, indanthrene, thioxanthen-9-one, 2-isopropyl-9H-thioxanthen-9-one, 4-isopropyl-9H-thioxanthen-9-one, and 1-chloro-4-propoxythioxanthone. The content of the sensitizer may be 0.01 to 10 parts by mass with respect to 100 parts by mass of the total mass of the curable resin composition constituting the curable resin layer 31.

[0057] Examples of the antioxidant include quinone derivatives such as benzoquinone and hydroquinone, phenol derivatives such as 4-methoxyphenol and 4-t-butylcatechol, aminoxyl derivatives such as 2,2,6,6-tetramethylpiperidine-1-oxyl and 4-hydroxy-2,2,6,6-tetramethylpiperidine-1-oxyl, and hindered amine derivatives such as tetramethylpiperidyl methacrylate. The content of the antioxidant may be 0.1 to 10 parts by mass with respect to 100 parts by mass of the total mass of the curable resin composition constituting the curable resin layer 31.

[0058] The curable resin layer 31 is provided on the light absorption layer 32, for example, by preparing in advance a laminated film having a support film and a curable resin layer formed on the support film and attaching this to the light absorption layer 32. The attachment of the laminated film to the light absorption layer 32 can be carried out at room temperature (20 ° C) or while heating using a roll laminator, a vacuum laminator, or the like. The laminated film having a support film and a curable resin layer can be obtained, for example, by a method including applying a resin varnish containing a thermosetting resin or a polymerizable monomer, an organic solvent, and, if necessary, other components to the support film and removing the organic solvent from the coating film. Alternatively, the curable resin layer 31 may be formed on the light absorption layer 32 by directly applying a similar resin varnish to the light absorption layer 32 and removing the organic solvent from the coating film.

[0059] An example of the light absorption layer 32 is a conductor layer containing a conductor that absorbs light and generates heat. Examples of the conductor constituting the conductor layer as the light absorption layer 32 include metals, metal oxides, and conductive carbon materials. The metal may be a simple metal such as chromium, copper, titanium, silver, platinum, gold, etc., or an alloy such as nickel-chromium, stainless steel, copper-zinc, etc. Examples of the metal oxide include indium tin oxide (ITO), zinc oxide, and niobium oxide. These may be used alone or in combination of two or more. The conductor may be chromium, titanium, or a conductive carbon material.

[0060] The light absorption layer 32 may be a metal layer composed of a single layer or a plurality of layers. The metal layer is likely to have a transmittance of 3.1% or less with respect to incoherent light. For example, the light absorption layer 32 may be a metal layer composed of a copper layer and a titanium layer. The metal layer as the light absorption layer 32 may be a layer formed by physical vapor deposition (PVD) such as vacuum evaporation and sputtering, chemical vapor deposition (CVD) such as plasma chemical vapor deposition, or a plating layer formed by electrolytic plating or electroless plating. According to physical vapor deposition, even if the support member 10 has a large area, a metal layer as the light absorption layer 32 covering the surface of the support member 10 can be efficiently formed.

[0061] When the light absorption layer 32 is a single-layer metal layer, the light absorption layer 32 may contain at least one metal selected from the group consisting of tantalum (Ta), platinum (Pt), nickel (Ni), titanium (Ti), tungsten (W), chromium (Cr), copper (Cu), aluminum (Al), silver (Ag), and gold (Au).

[0062] The light absorption layer 32 may be composed of two layers, a first layer and a second layer, and may be laminated in the order of the first layer and the second layer from the support member 10 side. In this case, for example, when the first layer has high light absorptivity and the second layer has a high coefficient of thermal expansion and a high elastic modulus, particularly good peelability is likely to be obtained. From this viewpoint, for example, the first layer may contain at least one metal selected from the group consisting of tantalum (Ta), platinum (Pt), nickel (Ni), titanium (Ti), tungsten (W), and chromium (Cr), and the second layer may contain at least one metal selected from the group consisting of copper (Cu), aluminum (Al), silver (Ag), and gold (Au). The first layer may contain at least one metal selected from the group consisting of titanium (Ti), tungsten (W), and chromium (Cr), and the second layer may contain at least one metal selected from the group consisting of copper (Cu) and aluminum (Al).

[0063] Another example of the light absorption layer is a layer containing conductive particles that absorb light and generate heat, and a binder resin in which the conductive particles are dispersed. The conductive particles may be particles containing the above-described conductor. The binder resin may be a curable resin composition, and in that case, the light absorption layer constitutes a part of the curable resin layer 31. For example, the light absorption layer 31B in the temporary fixing laminate 1 in FIG. 1(b) can be a layer containing conductive particles and a curable resin composition. The curable resin composition constituting the light absorption layer can contain the same components as the curable resin composition constituting the curable resin layer in the portion other than the light absorption layer. The curable resin composition constituting the light absorption layer may be the same as or different from the curable resin composition constituting the curable resin layer in the portion other than the light absorption layer. The content of the conductive particles in the light absorption layer may be 10 to 90 parts by mass with respect to the total amount of the components other than the conductive particles in the light absorption layer, that is, 100 parts by mass of the binder resin or the curable resin composition. When the content of the conductive particles is large, the light absorption layer is likely to have a transmittance of 3.1% or less with respect to incoherent light. From the viewpoint of transmittance, the content of the conductive particles may be 20% by mass or more, or 30% by mass or more.

[0064] The light absorption layer containing conductive particles and a binder resin can be formed, for example, by a method including applying a varnish containing conductive particles, a binder resin, and an organic solvent onto a support member or a curable resin layer, and removing the organic solvent from the coating film. A previously prepared light absorption layer 32 may be laminated onto the support member 10 or the curable resin layer. A laminate including the light absorption layer and the curable resin layer may be laminated onto the support member.

[0065] The thickness of the light absorption layer 32 may be 1 to 5000 nm or 100 to 3000 nm from the viewpoint of easy peelability. Further, when the thickness of the light absorption layer 32 is 50 to 300 nm, the light absorption layer 32 is likely to have a sufficiently low transmittance. When the light absorption layer 32 is a metal layer composed of a single layer or a plurality of layers, the thickness of the light absorption layer 32 (or the metal layer) may be 75 nm or more, 90 nm or more, or 100 nm or more, and may be 1000 nm or less from the viewpoint of good peelability. In particular, when the light absorption layer 32 is a single metal layer, the thickness of the light absorption layer 32 (or the metal layer) may be 100 nm or more, 125 nm or more, 150 nm or more or 200 nm or more, and may be 1000 nm or less from the viewpoint of good peelability. Even when the light absorption layer 32 is a metal layer containing a metal with a relatively low light absorption (e.g., Cu, Ni) or a metal layer containing a metal with a relatively low coefficient of thermal expansion (e.g., Ti), when its thickness is large, better peelability tends to be easily obtained.

[0066] The thickness of the temporary fixing material layer 30 (in the case of Fig. 1(a), the total thickness of the light absorption layer 32 and the curable resin layer 31) may be 0.1 to 2000 μm or 10 to 500 μm from the viewpoint of stress relaxation.

[0067] After preparing the temporary fixing laminate 1, as shown in Fig. 3(a), the semiconductor member 45 before processing is placed on the curable resin layer 31. The semiconductor member 45 has a semiconductor substrate 40 and a rewiring layer 41. The semiconductor member 45 may further have external connection terminals. The semiconductor substrate 40 may be a semiconductor wafer or a semiconductor chip obtained by dividing a semiconductor wafer. In the example of Fig. 3(a), a plurality of semiconductor members 45 are placed on the curable resin layer 31, but the number of semiconductor members may be 1.

[0068] The thickness of the semiconductor member 45 may be 1 to 1000 μm, 10 to 500 μm, or 20 to 200 μm from the viewpoints of miniaturization and thinning of the semiconductor device and suppression of cracking during transportation and processing steps.

[0069] The semiconductor member 45 placed on the curable resin layer 31 is pressure-bonded to the curable resin layer 31 using, for example, a vacuum press or a vacuum laminator. When using a vacuum press, the pressure-bonding conditions can be a pressure of 1 hPa or less, a pressure-bonding pressure of 1 MPa, a pressure-bonding temperature of 120 to 200°C, and a holding time of 100 to 300 seconds. When using a vacuum laminator, the pressure-bonding conditions can be, for example, a pressure of 1 hPa or less, a pressure-bonding temperature of 60 to 180°C or 80 to 150°C, a laminating pressure of 0.01 to 0.5 Mpa or 0.1 to 0.5 Mpa, and a holding time of 1 to 600 seconds or 30 to 300 seconds.

[0070] After the semiconductor member 45 is disposed on the curable resin layer 31, the curable resin layer 31 is thermally cured or photocured, whereby the semiconductor member 45 is temporarily fixed to the support member 10 via the temporary fixing material layer 30 having the cured curable resin layer 31c. The thermal curing conditions can be, for example, 300°C or less or 100 to 200°C for 1 to 180 minutes or 1 to 60 minutes.

[0071] Subsequently, as shown in FIG. 4(a), the semiconductor member temporarily fixed to the support member 10 is processed. FIG. 4(a) shows an example of processing including thinning of the semiconductor substrate. The processing of the semiconductor member is not limited thereto and can include, for example, thinning of the semiconductor substrate, division (dicing) of the semiconductor member, formation of through electrodes, etching treatment, plating reflow treatment, sputtering treatment, or a combination thereof.

[0072] The thinning of the semiconductor substrate 40 is performed by grinding the surface of the semiconductor substrate 40 opposite to the redistribution layer 41 using a grinder or the like. The thickness of the thinned semiconductor substrate 40 can be, for example, 100 μm or less.

[0073] After the processing of the semiconductor member 45, as shown in FIG. 4(b), a sealing layer 50 for sealing the processed semiconductor member 45 is formed. The sealing layer 50 can be formed using a sealing material commonly used for the manufacture of semiconductor elements. For example, the sealing layer 50 may be formed of a thermosetting resin composition. The thermosetting resin composition used for the sealing layer 50 contains, for example, epoxy resins such as cresol novolak epoxy resin, phenol novolak epoxy resin, biphenyl diepoxy resin, and naphthol novolak epoxy resin. The sealing layer 50, and the thermosetting resin composition for forming the same, may contain additives such as fillers and / or flame retardants.

[0074] The sealing layer 50 is formed, for example, using a solid material, a liquid material, a fine particle material, or a sealing film. When using a sealing film, a compression sealing molding machine, a vacuum laminating device, etc. are used. For example, by using these devices to coat the semiconductor member 45 with a sealing film heat-melted under the conditions of 40 to 180 °C (or 60 to 150 °C), 0.1 to 10 MPa (or 0.5 to 8 MPa), and 0.5 to 10 minutes, the sealing layer 50 can be formed. The thickness of the sealing film is adjusted so that the sealing layer 50 is equal to or greater than the thickness of the semiconductor member 45 after processing. The thickness of the sealing film may be 50 to 2000 μm, 70 to 1500 μm, or 100 to 1000 μm.

[0075] After forming the sealing layer 50, as shown in FIG. 5(a), the sealing layer 50 and the curable resin layer 31c may be divided into a plurality of parts each containing one semiconductor member 45.

[0076] As shown in FIG. 5(b), incoherent light A is irradiated on the temporary fixing laminate 1 from the support member 10 side, thereby separating the semiconductor member 45 from the support member 10. By irradiating the incoherent light A, the light absorption layer 32 absorbs light and instantaneously generates heat. Due to the generated heat, for example, melting of the cured curable resin layer 31c, thermal stress generated between the support member 10 and the semiconductor member 45, and scattering of the light absorption layer 32 may occur. One or more of these phenomena may be the main cause, and the semiconductor member 45 can be easily separated from the support member 10. When the curable resin composition constituting the curable resin layer 31 contains a hydrocarbon resin and the storage elastic modulus of the cured curable resin layer at 25°C is 5 to 100 MPa, peeling at the interface between the light absorption layer 32 and the cured curable resin layer 31 tends to occur easily. This tendency is particularly remarkable when the energy amount of the incoherent light A is in the range of 5 to 25 J / cm 2 ². In order to separate the semiconductor member 45 from the support member 10, a slight stress may be applied to the semiconductor member 45 together with the irradiation of the incoherent light A.

[0077] Incoherent light A is non-coherent light and is an electromagnetic wave having properties such as no interference fringes occurring, low coherence, and low directivity. Incoherent light has a tendency to attenuate as the optical path length becomes longer. Laser light is generally coherent light, while light such as sunlight and fluorescent lamp light is incoherent light. Incoherent light can also be said to be light other than laser light. Since the irradiation area of incoherent light is generally overwhelmingly wider than that of coherent light (i.e., laser light), the number of irradiations can be reduced. For example, separation of a plurality of semiconductor members 45 can be caused by one irradiation.

[0078] Incoherent light A may include infrared light. Incoherent light A may be pulsed light. The light source of incoherent light A is not particularly limited, but may be a xenon lamp. A xenon lamp is a lamp that utilizes light emission by application and discharge in a light-emitting tube filled with xenon gas. Since a xenon lamp discharges while repeatedly ionizing and exciting, it has a stable continuous wavelength from the ultraviolet light region to the infrared light region. A xenon lamp requires a shorter time to start compared to lamps such as metal halide lamps, and thus the time related to the process can be significantly shortened. Also, since a high voltage needs to be applied for light emission, high heat is generated instantaneously, but the cooling time is short, and a xenon lamp is also advantageous in that continuous operation is possible.

[0079] The irradiation conditions of the xenon lamp include the applied voltage, pulse width, irradiation time, irradiation distance (distance between the light source and the temporary fixing material layer), irradiation energy, etc., and these can be arbitrarily set according to the number of irradiations, etc. From the viewpoint of reducing damage to the semiconductor member 45, irradiation conditions under which the semiconductor member 45 can be separated by one irradiation may be set.

[0080] A part of the curable resin layer 31c may remain as 31c’ and adhere to the separated semiconductor member 45. The adhered residue 31c’ is removed as shown in FIG. 5(c). The residue 31c’ is removed, for example, by washing with a solvent. The solvent is not particularly limited, and examples thereof include ethanol, methanol, toluene, xylene, acetone, methyl ethyl ketone, methyl isobutyl ketone, hexane, etc. These may be used alone or in combination of two or more. For removing the residue 31c’, the semiconductor member 45 may be immersed in a solvent, or ultrasonic cleaning may be performed. The semiconductor member 45 may be heated at a low temperature of about 100°C or lower.

[0081] By the method exemplified above, a semiconductor element 60 including the processed semiconductor member 45 is obtained. A semiconductor device can be manufactured by connecting the obtained semiconductor element 60 to another semiconductor element or a substrate for mounting a semiconductor element.

Example

[0082] Hereinafter, the present invention will be described more specifically with reference to examples. However, the present invention is not limited to these examples.

[0083] (Study 1) 1-1. Curing resin layer Hydrogenated styrene-butadiene elastomer (trade name: Dynaron 2324P, JSR Corporation) was dissolved in toluene to prepare an elastomer solution with a concentration of 40% by mass. An elastomer solution containing 80 parts by mass of hydrogenated styrene-butadiene elastomer, 20 parts by mass of 1,9-nonanediol diacrylate (trade name: FA-129AS, Hitachi Chemical Co., Ltd.), and 1 part by mass of peroxyester (trade name: Perhexa 25O, NOF Corporation) were mixed to obtain a resin varnish.

[0084] The obtained resin varnish was applied to the release-treated surface of a polyethylene terephthalate (PET) film (Purelex A31, Teijin DuPont Film Co., Ltd., thickness: 38 μm) using a precision coater. The coating film was dried by heating at 80 °C for 10 minutes to form a curing resin layer with a thickness of about 100 μm.

[0085] 1-2. Light absorption layer As support members, a slide glass, a ground glass plate, and a silicon wafer having a size of 40 × 40 mm were prepared. On each support member, a titanium layer and a copper layer were formed in this order by sputtering to form a light absorption layer composed of two layers of a titanium layer (thickness: 20 nm) / copper layer (thickness: 200 nm). In sputtering, after the pretreatment by reverse sputtering, the titanium layer and the copper layer were formed by RF sputtering. The conditions for reverse sputtering (pretreatment) and RF sputtering are as follows. Reverse sputtering (pretreatment) · Ar flow rate: 1.2×10 -2 Pa·m 3 / s (70 sccm) · RF power: 300 W · Time: 300 seconds RF sputtering ·Ar flow rate: 1.2×10 -2 Pa·m 3 / s (70 sccm)

[0086] 1-3. Transmittance The transmittance of the support member and the light absorption layer to the light irradiated from the xenon lamp was measured. The transmittance of the light absorption layer can be regarded as substantially the transmittance of the temporary fixing material layer. The transmittance was measured using the same xenon lamp as the xenon lamp used in the peeling test described later and a spectro-radiometer (USR-45, Ushio Electric Inc.). The detection terminal of the spectro-radiometer was installed at a position 5 cm away from the light irradiation part of the xenon lamp. The light irradiated from the xenon lamp was directly detected by the detection terminal, and the light quantity of the detected light was taken as the baseline. Next, the object to be measured was placed between the detection terminal of the spectro-radiometer and the xenon lamp, and the transmitted light irradiated from the xenon lamp and transmitted through the object to be measured was detected by the detection terminal. The ratio of the light quantity of the detected transmitted light to the baseline was taken as the transmittance. The transmittance regarding the total light quantity of the light in the wavelength range of 300 to 800 nm was calculated by the following formula. Transmittance (%) = {(Total light quantity of transmitted light at wavelengths of 300 to 800 nm) / (Total light quantity of baseline at wavelengths of 300 to 800 nm)} × 100 Regarding the light absorption layer, the transmittance of the laminate having the support member and the light absorption layer was measured by the light from the xenon lamp arranged on the support member side. The light quantity of the light incident on the light absorption layer was calculated from the baseline and the transmittance of the support member, and the ratio of the light quantity of the transmitted light thereto was taken as the transmittance of the light absorption layer.

[0087] 1-4. Peeling test A curable resin layer cut out to a size of 40 mm × 40 mm was placed on the light absorption layer formed on each support member. The curable resin layer was adhered to the light absorption layer by vacuum lamination to obtain a temporary fixing laminate having a laminated structure of support member / light absorption layer / curable resin layer. A semiconductor chip (size: 10 mm × 10 mm, thickness: 150 μm) was placed on the curable resin layer of the temporary fixing laminate. The curable resin layer was cured by heating at 180°C for 1 hour to obtain a test piece for peel test having a semiconductor chip temporarily fixed to the support member.

[0088] For each test piece, pulsed light was irradiated from the support member side of the temporary fixing laminate with a xenon lamp. The light irradiation conditions are as follows. As the xenon lamp, S2300 manufactured by Xenon was used. The wavelength range of this device is 270 nm to the near-infrared region. The irradiation distance is the distance between the xenon lamp as the light source and the support member. ·Applied voltage: 3700 V ·Pulse width: 200 μs ·Irradiation distance: 50 mm ·Irradiation times: 1 time ·Irradiation time: 200 μs After the light irradiation with the xenon lamp, the state of the test piece was observed, and the peelability was evaluated according to the following criteria. The evaluation results are shown in Table 1. A: The semiconductor chip was naturally peeled from the temporary fixing laminate only by light irradiation, or the semiconductor chip was peeled from the temporary fixing laminate without being damaged by inserting tweezers between the semiconductor chip and the curable resin layer. B: Even when tweezers were inserted between the semiconductor chip and the curable resin layer, the semiconductor chip was not peeled from the temporary fixing laminate.

[0089]

Table 1

[0090] (Study 2) A test piece having a slide glass as a support member was fabricated in the same procedure as in "Study 1", except that the thicknesses of the copper layer and the titanium layer constituting the light absorption layer were changed as shown in Table 2. In Comparative Example 3, no light absorption layer was provided, and a curable resin layer was directly laminated on the support member. In Comparative Example 4, only a titanium layer was formed as the light absorption layer. The peelability of the obtained test pieces was evaluated by the same peel test as in "Study 1". The transmittance of the light absorption layer was measured by the same method as in "Study 1". The evaluation results are shown in Table 2.

[0091]

Table 2

[0092] (Study 3) A light absorption layer composed of a single-layer or two-layer metal layer shown in Table 3 was formed by sputtering on a slide glass with a thickness of 1300 μm as a support member. In the table, the composition of the light absorption layer is shown in the lamination order from the slide glass side. For example, "Ti(50) / Cu(200)" means that a titanium layer with a thickness of 50 nm and a copper layer with a thickness of 200 nm were laminated in this order from the slide glass side. Examples 1, 3, and 4 are the same as Examples 1, 3, and 4 in Study 2. On the light absorption layer, a temporary fixing laminate having a laminate structure of support member / light absorption layer / curable resin layer was fabricated in the same procedure as in "Study 1". Further, a test piece for a peel test having a semiconductor chip temporarily fixed to the support member was fabricated in the same procedure as in "Study 1". The transmittance of the light absorption layer was measured by the same method as in "Study 1".

[0093] For each of the prepared test specimens, pulsed light was irradiated from the support member side of the temporary fixing laminate with a xenon lamp. The light irradiation conditions were as follows. As the irradiation device having a xenon lamp, PulseForge 1300 manufactured by Novacentrix was used. The irradiation distance is the distance between the xenon lamp as the light source and the support member. The pulse width was sequentially increased from 150 μs to 10 μs one by one, and the minimum value of the pulse width at which the semiconductor chip was naturally peeled off from the temporary fixing laminate only by light irradiation was recorded. The irradiation of the pulsed light was performed while exchanging the test specimens, and the number of irradiations for each individual test specimen was set to 1 time. The minimum value of the pulse width at which the semiconductor chip is peeled off is shown in Table 3. ·Applied voltage: 800 V ·Pulse width: 150 - 700 μs ·Irradiation distance: 6 mm ·Number of irradiations: 1 time Based on the minimum value of the pulse width at which the semiconductor chip is peeled off, the peelability was evaluated according to the following criteria. AAA: 150 μs AA: 160 μs or more and less than 350 A: 350 μs or more and 700 μs or less, or peeling due to dissolution of the light absorption layer (A(Melt)) B: Unable to peel off at 700 μs or less

[0094]

Table 3

[0095] From the results of Studies 1, 2, and 3, it was confirmed that by using a temporary fixing laminate including a combination of a support member with a transmittance of 90% or more and a light absorption layer with a transmittance of 3.1% or less, after temporarily fixing the semiconductor member, the semiconductor member can be easily separated from the support member by irradiation with incoherent light from a xenon lamp.

Explanation of symbols

[0096] 1…Temporary fixing laminate, 10…Support member, 30…Temporary fixing material layer, 31…Curable resin layer, 31c…Cured curable resin layer, 32…Light absorption layer, 40…Semiconductor substrate, 41…Redistribution layer, 45…Semiconductor member, 50…Sealing layer, 60…Semiconductor element, S…Outermost surface of the temporary fixing material layer.

Claims

1. A step of preparing a temporary fixing laminate including a support member and a temporary fixing material layer provided on the support member, wherein the temporary fixing material layer has a curable resin layer including at least one outermost surface of the temporary fixing material layer; A step of temporarily fixing a semiconductor substrate and a semiconductor member having a redistribution layer provided on one surface side of the semiconductor substrate to the support member via the temporary fixing material layer in a direction in which the redistribution layer is located on the curable resin layer side; A step of processing the semiconductor member temporarily fixed to the support member; A step of irradiating the temporary fixing laminate with incoherent light from the support member side, thereby separating the semiconductor member from the support member; Comprising these steps in this order, A part or all of the temporary fixing material layer is a light absorption layer that absorbs light and generates heat, The transmittance of the support member to the incoherent light is 90% or more, The transmittance of the temporary fixing material layer to the incoherent light is 2.5% or less, The light source of the incoherent light is a xenon lamp, A method for manufacturing a semiconductor device.

2. The method according to claim 1, wherein the incoherent light includes infrared rays.

3. The method according to claim 1 or 2, wherein the incoherent light is pulsed light having a pulse width of 700 μs or less.

4. The method according to any one of claims 1 to 3, wherein the temporary fixing material layer has a metal layer provided as a layer separate from the curable resin layer as the light absorption layer.

Images