Electronic device

Abstract

One object of the present invention is to provide a display device that facilitates photographing when photographing one's own face or the like while looking at a screen in a dark place. Alternatively, one aspect of the present invention is to provide a display device that facilitates confirming one's own face or the like while looking at a screen in a dark place. **Solution**: A display device having a first region and a second region, wherein the first region has a function of displaying an image of a subject, and the second region has a function of irradiating the subject with light. Alternatively, one aspect of the present invention is an electronic device having a display device and an imaging device, wherein the display device has a first region and a second region, the first region has a function of displaying an image of a subject obtained from the imaging device, and the second region has a function of irradiating the subject with light.

Description

Technical Field

[0001] One aspect of the present invention relates to a light source for an imaging device, a display device, or a driving method thereof. In particular, one aspect of the present invention relates to a program for an imaging device or a display device, a recording medium on which the program is recorded, and an electronic device having the recording medium. Note that one aspect of the present invention is not limited to the above technical field. The technical field of one aspect of the invention disclosed in this specification and the like relates to an article, a method, or a manufacturing method. Or, one aspect of the present invention relates to a process, a machine, a manufacture, or a composition of matter. Therefore, more specifically, examples of the technical field of one aspect of the present invention disclosed in this specification include semiconductor devices, display devices, liquid crystal display devices, light-emitting devices, lighting devices, power storage devices, storage devices, driving methods thereof, or manufacturing methods thereof.

[0002] Note that one aspect of the present invention is not limited to the above technical field. The technical field of one aspect of the invention disclosed in this specification and the like relates to an article, a method, or a manufacturing method. Or, one aspect of the present invention relates to a process, a machine, a manufacture, or a composition of matter. Therefore, more specifically, examples of the technical field of one aspect of the present invention disclosed in this specification include semiconductor devices, display devices, liquid crystal display devices, light-emitting devices, lighting devices, power storage devices, storage devices, driving methods thereof, or manufacturing methods thereof. One aspect of the present invention relates to an article, a method, or a manufacturing method. Or, one aspect of the present invention relates to a process, a machine, a manufacture, or a composition of matter. One aspect of the present invention relates to a process, a machine, a manufacture, or a composition of matter. Therefore, more specifically, examples of the technical field of one aspect of the present invention disclosed in this specification include semiconductor devices, display devices, liquid crystal display devices, light-emitting devices, lighting devices, power storage devices, storage devices, driving methods thereof, or manufacturing methods thereof. One aspect of the present invention relates to a semiconductor device, a display device, a liquid crystal display device, a light-emitting device, a lighting device, a power storage device, a storage device, a driving method thereof, or a manufacturing method thereof. Therefore, more specifically, examples of the technical field of one aspect of the present invention disclosed in this specification include semiconductor devices, display devices, liquid crystal display devices, light-emitting devices, lighting devices, power storage devices, storage devices, driving methods thereof, or manufacturing methods thereof. For example, semiconductor devices, display devices, liquid crystal display devices, light-emitting devices, lighting devices, power storage devices, storage devices, driving methods thereof, or manufacturing methods thereof can be given as examples.

Background Art

[0003] Imaging elements such as image sensors or electronic devices having a camera function have been developed. In particular, in portable electronic devices, the development of electronic devices having an imaging element or a camera function has been active. In such portable electronic devices, a display having a large screen is arranged on the front surface of the electronic device. The user takes pictures or videos using an image sensor provided on the back surface of the electronic device while looking at the large screen. However, recently, image sensors are not only on the back surface of electronic devices but also on the front surface of electronic devices. The user takes pictures or videos using an image sensor provided on the back surface of the electronic device while looking at the large screen.

[0004] However, recently, image sensors are not only on the back surface of electronic devices but also on the front surface of electronic devices. Electronic devices provided on the surface are also being developed. That is, electronic devices in which an image sensor and a display are arranged on the same plane are also being developed. In that case, an image such as one's own face looking at the screen is captured by an image sensor provided on the front surface ( see Patent Document 1). Further, when used as a videophone, while viewing the image of the other party on the screen, one's own image can be captured by the image sensor and transmitted to the other party.

[0005] On the other hand, when taking a picture using an image sensor, the illuminance of the subject may be low. In such a case, a light source such as a flash or a strobe is used to illuminate the subject to increase the illuminance of the subject. By this, beautiful photography can be performed (see Patent Document 2). Therefore, in a portable electronic device, in addition to the image sensor, a flash for illuminating the subject is often provided separately. On the other hand, in Patent Document 1, an electronic device is disclosed in which a display unit has a display function and an illumination function for the subject of a camera, and these functions can be switched.

Prior Art Documents

Patent Documents

[0006]

Patent Document 1

Patent Document 2

Summary of the Invention

Problems to be Solved by the Invention

[0007] In an electronic device in which a camera unit having an image sensor and a display unit are arranged on the same surface side wherein the display unit has a display function and an illumination function for the subject of the camera, and when switching and operating these functions, if the display unit is switched to the operation of the illumination function before shooting, it may not be possible to accurately confirm how the shooting will be performed. Or conversely, if the display unit is switched to the operation of the illumination function only at the moment of shooting, when the brightness of the ambient light is low, since the illuminance of the subject is low, there are cases where only a completely dark subject can be confirmed.

[0008] Therefore, one aspect of the present invention aims to provide a display device, an electronic device, etc. that facilitate shooting when shooting one's own face looking at the screen in a dark place. Or, one aspect of the present invention aims to provide a display device, an electronic device, etc. that facilitate confirming one's own face looking at the screen in a dark place. Or, one aspect of the present invention aims to provide a display device, an electronic device, etc. that can irradiate a subject

[0009] with illumination light of high brightness. Or, one aspect of the present invention aims to provide a display device, an electronic device, etc. that can be used as a light source for a subject. Or, one aspect of the present invention aims to provide a display device, an electronic device, etc. that can be used for crime prevention. Or, one aspect of the present invention aims to provide a display device, an electronic device, etc. with low power consumption. Or, one aspect of the present invention aims to provide a novel display device, a novel electronic device, etc. Or, one aspect of the present invention aims to provide a novel illumination device, etc. for the purpose of providing a novel display device, a novel electronic device, etc. Or, one aspect of the present invention aims to provide a novel illumination device, etc. ... shall be one of them. Alternatively, one aspect of the present invention aims to provide a new program, or new software, etc. ... shall be one of the purposes.

[0010] Note that the description of these problems does not prevent the existence of other problems. One aspect of the present invention is not required to solve all of these problems. Other problems will become apparent from the descriptions in the specification, drawings, claims, etc., and it is possible to extract these other problems from the descriptions in the specification, drawings, claims, etc. ... shall be considered not to need to solve all of these problems. ... will naturally become apparent from the descriptions in the specification, drawings, claims, etc., and it is possible to extract these other problems from the descriptions in the specification, drawings, claims, etc. ... will naturally become apparent from the descriptions in the specification, drawings, claims, etc., and it is possible to extract these other problems from the descriptions in the specification, drawings, claims, etc.

Means for Solving the Problems

[0011] One aspect of the present invention is a display device having a first region and a second region, wherein the first region has a function of being able to display an image of a subject, and the second region has a function of being able to irradiate the subject with light. ... has a function of being able to irradiate the subject with light. ... is a display device characterized by the above.

[0012] Alternatively, one aspect of the present invention is a display device having a first region and a second region, wherein the first region has a function of being able to display an image, and the second region has a function of being able to irradiate illumination light. ... has a function of being able to irradiate illumination light. ... is a display device characterized by the above.

[0013] Alternatively, one aspect of the present invention is an electronic device having a display device and an imaging device, wherein the display device has a first region and a second region, the first region has a function of being able to display an image of a subject obtained from the imaging device, and the second region has a function of being able to irradiate the subject with light. ... has a function of being able to display an image of a subject obtained from the imaging device. ... has a function of being able to irradiate the subject with light. ... is an electronic device characterized by the above.

[0014] Alternatively, one aspect of the present invention is, in the above configuration, the display device and the imaging device are provided on the same surface. An electronic device characterized by being configured as such.

[0015] Alternatively, one aspect of the present invention is a program having first and second functions, wherein the first function has a function of being able to display an image of a subject in a first area of a display device, and the second function has a function of being able to display an image for irradiating light onto the subject in a second area of the display device. It is a program characterized by this.

[0016] Alternatively, one aspect of the present invention is a program having first to third functions, wherein the first function has a function of being able to obtain an image of a subject using an imaging device, the second function has a function of being able to display an image of the subject in a first area of a display device, and the third function has a function of being able to display an image for irradiating light onto the subject in a second area of the display device. It is a program characterized by this.

Advantages of the Invention

[0017] According to one aspect of the present invention, in a dark place, when photographing one's own face or the like while looking at the screen, it is possible to provide a display device or the like that makes it easier to take a photograph. Alternatively, according to one aspect of the present invention, in a dark place, it is possible to provide a display device or the like that makes it easier to confirm one's own face or the like while looking at the screen. It is possible to provide the like.

[0018] Alternatively, according to one aspect of the present invention, it is possible to provide a display device or the like that can irradiate a subject with illumination light of high brightness. Alternatively, according to one aspect of the present invention, it is possible to provide a display device or the like that can be used as a light source for a subject. Alternatively, according to one aspect of the present invention, it is possible to provide the like. According to this, it is possible to provide a display device or the like that can be used for security purposes. Also According to one aspect of the present invention, it is possible to provide a display device or the like with low power consumption. Also Alternatively, according to one aspect of the present invention, it is possible to provide a novel display device or the like. Or According to one aspect of the present invention, it is possible to provide a novel lighting device or the like. Or, according to one aspect of the present invention it is possible to provide a novel program or novel software or the like.

[0019] Note that the description of these effects does not prevent the existence of other effects. Note that one aspect of the present invention does not necessarily have to have all of these effects. Note that other effects will naturally become apparent from the description in the specification, drawings, claims, etc., and it is possible to extract these other effects from the description in the specification, drawings claims, etc.

Brief Description of the Drawings

[0020]

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Embodiments for Carrying Out the Invention

[0021] (Embodiment 1) In this embodiment, a driving method for an electronic device according to an aspect of the present invention will be described.

[0022] As shown in FIG. 1(A), on the first surface (for example, the front surface) of the electronic device 101, as an example, a display device 102 and a camera unit 103 are provided.

[0023] The display device 102 has a function of performing various displays. Or, the display device 102 has a function of irradiating light to the outside and outputting light. Note that the display device can also be called a display unit or a display panel.

[0024] The camera unit 103 has, for example, a lens, an imaging element such as an image sensor, and the like. It has a function of acquiring images such as moving images and still images. Note that the camera unit can also be called an imaging device.

[0025] First, the case of the first mode will be described. This corresponds to, for example, the case of performing normal work. Therefore, the first mode can also be called the first operation mode, the normal mode, or the normal operation mode, etc. In this mode, using the display device 102, images, texts, photos, etc. can be browsed, images, texts, photos, etc. can be displayed, and characters can be input. The input is performed through at least one of, for example, buttons, switches provided on the electronic device 101, or sensors. Or, the input is performed through at least one of, for example, the display device 102, a touch sensor, a keyboard, a mouse, or various sensors provided thereon. Therefore, the display device 102 may have a function as an input device. Or, the input is performed on the electronic device 101 through a wired or wireless connection to a keyboard, a mouse, a pointing pad, buttons, a pen, or the like. ​​​​​​​​It is performed through at least one of them. Or, the input is a sensor provided in the electronic device 101 (proximity, direction, magnetic field, linear acceleration, luminance, gyro, gravity, acceleration, atmospheric pressure, temperature, image , infrared, ultraviolet, etc.) through at least one of them.

[0026] Next, the case of the second mode will be described. This corresponds to the case where, for example, shooting is performed using the camera unit 103 provided on the front surface of the electronic device 101 . Therefore, the second mode can also be called the second operation mode, shooting mode, shooting operation mode, lighting mode, or lighting operation mode. In this mode, at least the area 104 and the area 106 are provided on the display device 102. In the area 104, for example, an image of the subject 105 obtained through the camera unit 103 is displayed. That is, the area 104 can have the function as a viewfinder area. The area 106 has a function as lighting for illuminating the subject 105, for example. That is, the area 106 can have the function as a flash lighting area. That is, in the second mode, that is, the shooting mode, the display device 102 has both a lighting function such as a flash or a strobe and a display function for displaying an image at the same time. Such two functions can be realized simultaneously when the camera unit 103 is operating. That is, such two functions can be realized simultaneously at least in one of the cases when shooting is being performed by the camera unit 103, when preparing to shoot, when checking the angle, or after shooting is completed.

[0027] ​​​​​Note that the region 104 and the region 106 may be fixed regions in the display device 102, and may be changed in size, position, etc. at any time.

[0028] Note that it is desirable that the region 104 and the region 106 be provided on the same display device. By providing the region 104 and the region 106 on the same display device, at least one of their region sizes or positions can be freely changed. However, one aspect of the embodiment of the present invention is not limited to this. For example, the region 104 and the region 106 may be provided on different display devices. For example, the region 104 may be provided on the first display device, and the region 106 may be provided on the second display device.

[0029] Here, as an example, in the region 106, it is desirable that the display be with substantially uniform brightness. When the display is with substantially uniform brightness, it can be said that it is equivalent to the case where an image having the same gradation within the region 106 is displayed. As an image having the same gradation, the color of the image is preferably white. Thereby, the subject 105 can be photographed in an appropriate color. Also, it is desirable that the brightness of the region 106 be as high as possible. Therefore, as an example, it is desirable that the brightness of the region 106 be equivalent to the brightness when the brightest gradation is displayed in the first mode for performing normal work. However, one aspect of the embodiment of the present invention is not limited to this. The brightness of the region 106 may be freely set and changed by the user.

[0030] FIG. 1(B) shows a schematic view seen from the side. From the region 106 of the display device 102, illumination light 1 07A is irradiated toward the object 105. Then, the reflected light 10 7B enters the camera unit 103. The surrounding ambient light is irradiated onto the subject 105, and This may be reflected by the subject 105 and enter the camera unit 103. The image obtained in 03 is displayed in area 104 of display device 102 .

[0031] These controls are realized by at least one of hardware and software. For example, the camera function application may require dedicated software or a dedicated program. These operations are controlled by the program, and the above operations and functions are realized. Or, in an application with a certain function, some software functions may These operations are controlled to realize the above-mentioned operations and functions.

[0032] With this configuration, even if the surrounding ambient light is dark, the subject 105 Since illumination light 107A emitted from area 106 is irradiated, subject 105 can be kept bright. Then, the camera unit 103 receives the reflected light 107B and obtains a clear image. Furthermore, in the area 104 of the display device 102, an image obtained from the camera unit 103 is displayed. It displays the image you are taking, so you can check in real time what kind of image is being taken. Therefore, the subject 105 can see how he is being photographed while photographing himself. You can check whether

[0033] After this, still images and moving images are actually taken, and the image data obtained is stored in a storage device. After shooting is complete, return to normal mode and display the The stored image data can be confirmed using the display device 102. At this time, since the shooting has ended, the area 106 that functions as illumination does not necessarily need to be provided. In that case, the entire display device 102 can be used to confirm the image.

[0034] As an example, Fig. 2 shows the case of operating an email in the normal mode.

[0035] Next, Fig. 3 shows an example of the screen of the display device 102 when the electronic device 101 is started. At least one of characters, numbers, or icons is displayed on the display device 102. In both the area 104 and the area 106, at least one of characters, numbers, or icons is displayed. That is, the area 104 and the area 106 each have the function of being able to display at least one of characters, numbers, icons, or images according to the operation mode.

[0036] When shooting a video with the camera unit 103, for example, during shooting, the display device 102 is always provided with at least the area 104 and the area 106. In the area 106, the illumination light 107A continues to irradiate the subject 105, and in the area 104, it is desirable that the shooting situation continues to be displayed. Thus, even for a moving image, the subject 105 irradiated appropriately can be shot within an appropriate shooting range.

[0037] Next, Fig. 4 shows an example of a flowchart when shooting is performed using the camera unit 103. That is, it shows an example of a flowchart when shooting is performed in the second mode.

[0038] ​​​​In step 130, first, activate the camera function. As a method of activation, for example , as shown in FIG. 3, double-click or perform an operation such as a touch on the icon 115A of the camera software (application cation) displayed on the display device 102 to , activate it. Alternatively, press a button or switch provided on the electronic device 101 to activate it. The software may be not only dedicated to the camera but also those that use the camera as a part of the function. For example, when used as a part of the function, examples include video phone or SNS (Social Networking Service). .

[0039] Next, in step 131, regions 104 and 106 are provided on the display device 102 . At this time, there may be another region on the display device 102. Alternatively, there may be a region where another display is performed inside region 104 or inside region 106 . Examples of the other display performed here include at least one of a graph showing the characteristics of an image, time, battery charging status, or radio wave conduction status.

[0040] Next, in step 132, irradiate the subject 105 with illumination light 107A from the region 106 on the display device 102 . At this time, the intensity and color of the illumination light 107A may be changed. Note that at this time, the surrounding ambient light may be irradiated toward the subject 105.

[0041] Next, in step 133, the reflected light 107B from the subject 105 enters the camera unit 103 . Of course, in addition to the reflected light 107B, other light enters the camera unit 103, for example, light from surrounding objects Light from them also enters. As a result, in the camera unit 103, photoelectric conversion processing is performed.

[0042] Note that steps 132 and 133 may be considered to be performed almost simultaneously in some cases. There is.

[0043] Next, in step 134, an image of the subject 105 obtained from the camera unit 103 is displayed in the area 104 on the display device 102. This image is an image for the function of the viewfinder and is for confirming what kind of shooting is to be performed. Therefore, the display is rewritten in real time. That is, in other words, the moving image of the subject 105 obtained from the camera unit 103 is continuously displayed as a moving image in the area 104 on the display device 102. This image is an image for the function of the viewfinder and is for confirming what kind of shooting is to be performed. Therefore, the display is rewritten in real time. That is, in other words, the moving image of the subject 105 obtained from the camera unit 103 is continuously displayed as a moving image in the area 104 on the display device 102.

[0044] Next, in step 135, the state of the subject 105 is confirmed using the area 104. That is, the image displayed in the area 104 is confirmed to check whether shooting is possible. At this time, the intensity and color of the illumination light 107A may be changed while observing the situation in the area 104. For example, if the illuminance of the subject 105 is weak, the intensity of the illumination light 107A may be increased. Or, if the shooting magnification is not appropriate, in the camera unit 103, using the zoom function, the image may be enlarged or reduced so that the shooting area is within an appropriate range. For example, if the illuminance of the subject 105 is weak, the intensity of the illumination light 107A may be increased. Also, if the shooting magnification is not appropriate, in the camera unit 103, using the zoom function, the image may be enlarged or reduced so that the shooting area is within an appropriate range.

[0045] Next, in step 136, shooting is executed by the camera unit 103. The shooting may be executed by pressing the shooting execution button displayed on the display device 102. Or, the shooting may be executed by pressing a button or switch provided on the electronic device 101. Or, the shooting may be executed by pressing the shooting execution button provided on a device connected by a network such as an electrical communication. The shooting may be executed by pressing the shooting execution button displayed on the display device 102. Or, the shooting may be executed by pressing a button or switch provided on the electronic device 101. Or, the shooting may be executed by pressing the shooting execution button provided on a device connected by a network such as an electrical communication. This may be done. At this time, a still image may be captured, or a moving image may be captured. Moreover, a plurality of still images may be continuously captured.

[0046] Next, in step 137, the captured data is saved in a storage device. Note that the storage device may be the storage device provided in the electronic device 101, or alternatively, a storage device connected via a network such as a telecommunications network. The telecommunications network may be a wired network or alternatively a wireless network. Also, the storage device may be a volatile storage device such as a DRAM. Or, it may be a non-volatile storage device such as a flash memory, a hard disk, a DVD, an optical disk, or a ROM. Or, the storage device may have a semiconductor memory, a magnetic memory, a magneto-optical memory, or an organic memory, etc.

[0047] In this way, after the shooting operation is completed, the first mode, that is, the normal operation is resumed, and the captured data can be browsed or displayed using the display device 102.

[0048] Note that the order of this step is an example, and the order of some steps may be reversed, or a plurality of steps may be performed simultaneously, or one step may be divided into a plurality of steps in some cases.

[0049] By operating in this way, the display device 102 can have both the function of displaying and the function of lighting. Note that it is desirable that both functions are executed simultaneously while the camera unit 103 is operating. However, one aspect of the embodiment of the present invention , even when the camera unit 103 is not operating, the display device 102 may be provided with an area 104 and an area 106.

[0050] Here, consider the arrangement of the area 104 having the function of the viewfinder and the area 106 having the function of illumination. First, in Fig. 1(A), as an example, the area 104 is provided on the side close to the camera unit 103. And the area 106 is provided on the side far from the camera unit 103. In this way, when the area 104 is arranged on the side close to the camera unit 103, if the subject 105 is a human, it is easy to align the line of sight of the subject 105. That is, if the subject 105 is looking at the area 104 and checking the situation, the line of sight is likely to come to a position closer to the camera unit 103. Therefore, when shooting is executed as it is, it is easy for the line of sight of the subject to look at the camera unit 103. As a result, it is also easy to shoot a still image or a moving image in which the line of sight is properly aligned.

[0051] Also, since the area 106 is far from the camera unit 103, the illumination light irradiated from the area 106 is less likely to enter the camera unit 103 as noise. As a result, the contrast of the captured image can be improved.

[0052] s However, one aspect of the embodiment of the present invention is not limited to this. For example, as shown in Fig. 5, the area 106 may be provided on the side close to the camera unit 103. By providing the area 106 on the side close to the camera unit 103, it is easy to irradiate the illumination light 107A perpendicularly to the subject 105. As a result, it is difficult to form a shadow on the subject 105, and it is easy to take a beautiful image.

[0053] In addition, in FIG. 1(A) and FIG. 5, one area 104 and one area 106 are provided. However, one aspect of the embodiment of the present invention is not limited to this case. For example, as shown in FIG. 6, the illumination area may be divided into areas 10 In this way, the illumination area can be divided into two areas, area 106A and area 106B. By positioning the object 105, illumination light can be directed onto the object 105 from different areas, i.e., from different angles. This makes it difficult for shadows to form on the subject 105, making it easier to capture clear images. .

[0054] In addition, in FIG. 1(A), FIG. 5, and FIG. 6, the area 104 and the area 106 are arranged side by side in the vertical direction. However, one aspect of the embodiment of the present invention is not limited to this. Alternatively, as shown in FIG. 7(A), the region 104 may be included in the region 106. It is also possible to arrange it in such a way that

[0055] At least one of the size, area, shape, position, color, and brightness of the region 106 The intensity of the light emitted from the area 106 may also be changed depending on the situation. Similarly, the size, area, shape, position, color, or At least one of the brightness and other parameters may be changed depending on the situation. For example, in FIG. An example of the case where the size of the area 104 is changed to a smaller size is shown in FIG. The area can be changed by touching the screen with a finger or the like and dragging the outer frame of the area 104. It can be executed.

[0056] Alternatively, a dedicated user interface may be arranged to control the screen. FIG. 8(A ) shows an example when the slider 108A is arranged. By moving the button 108AA to the left and right , the value can be changed. Therefore, an example when the size of the area 106 is reduced with this slider 108A is shown in FIG. 8(B). By moving the button 108AA of the slider 108A to the left, the area 106 becomes smaller.

[0057] Note that in FIG. 8(B), the size of the area 106 is changed by the slider 108A , but the size of another object may be changed. For example, the brightness of the area 106 may be changed by the slider 108A. Or, the image of the area 106 may be changed.

[0058] Or, the color of the area 106 may be changed by the slider. FIG. 9 shows an example when the color of the area 106 is changed using the blue slider 108B, the green slider 108C, and the red slider 108D. By moving the blue button 108BA, the green button 108CA , and the red button 108DA to the left and right, the color of the area 106 can be changed.

[0059] Or, for example, examples of changing the position of the area 104 on the screen are shown in FIGS. 10 and 11. As shown in FIGS. 10(A) and 11(A), first, the area 104 is touched with a contact object 111 such as a finger or a pen . Then, as shown in FIGS. 10(B) and 11(B), while touching, drag it to move the area 104 to the left or down. Then, after dragging to the position where you want to move it, as shown in FIGS. 10(C) and 11(C), remove the contact object 111 from the screen ​​​​​​​​​Release. By such an operation, the position on the screen of the area 104 can be changed. Note that , when it is desired to change the position of the area 106, it can be moved in the same manner. In that case Examples are shown in FIGS. 12(A), 12(B), 12(C), 13(A), 13(B), and 1 13(C).

[0060] Note that even when the electronic device 101 or the display device 102 is rotated, accordingly, the arrangement of the area 1 04 and the area 106 can be changed. For example, an example of rotating FIG. 1(A) clockwise (clockwise) is shown in FIG. 14(A). The area 104 is arranged near the camera unit 103. Conversely, an example of rotating FIG. 1(A) counterclockwise (counterclockwise) is shown in FIG. 14(B). In both FIG. 14(A) and FIG. 14(B), the area 104 is arranged near the camera unit 103. This makes it easier to direct the line of sight at the camera unit 103. However, one aspect of the embodiment of the present invention is not limited to this. Note that even when shooting is performed using the camera unit 103, when the ambient light is strong and bright

[0061] , it is not always necessary to use the display device 102 as illumination. For example, as shown in FIG. 1 5(A), the area 106 may be provided. Or, as shown in FIG. 15(B), it is also possible not to provide the area 106, or to set the brightness of the area 106 to zero. Or, the brightness of the area 106 may be made the same as that of the area 104, etc. That is, even when shooting is performed using the camera unit 103, in some cases, depending on the situation, the display device 102 may not be made to function as illumination. In that case ​As shown in FIG. 15(C), the entire screen of the display device 102 may be used as the area 104. This may be done.

[0062] Alternatively, even if an attempt is made to use the display device 102 as illumination, there may be a case where its brightness is insufficient. In such a case, a dedicated lighting member 113 may be arranged separately from the display device 102. An example of the case where the lighting member 113 is provided in the vicinity of the camera unit 103 is shown in FIG. 16. Note that a plurality of lighting members 113 may be provided. Also, the emission color of each lighting member may be changed. The lighting member 113 is configured using, for example, an LED or the like.

[0063] Note that when shooting is performed using the camera unit 103, the display device 102 can display at least one of various icons, various images, or various characters, in addition to the area 1 04 or the area 106. The display can be made in the area inside the area 104 or the area 106, or can also be made in the area outside the area 104 or the area 106.

[0064] For example, an example of the case where various icons and the like are arranged inside the area 106 is shown in FIG. 17. The icon 112A indicates a shooting execution button. In the case of a normal camera, it corresponds to a shutter button. By pressing this button, shooting is executed. The icon 11 2B indicates a flash control button. It is possible to control whether to execute the flash or not. Note that by setting the flash control to automatic, the flash can be made to be executed only when the brightness of the subject 105 is dark. The icon 112C indicates the shooting mode button. It is possible to select whether the image to be shot is a still image or a video. Icon 112D indicates the property button. It is possible to control whether to display a window for performing various settings.

[0065] As another example, Fig. 18 shows an example where characters are displayed inside region 106.

[0066] In addition, when various icons and the like are arranged inside region 106, in some cases, it can be determined that the portion does not emit strong illumination light. In that case, in the region where various icons and the like are arranged, it can be said that the display device 102 will not be burned or deteriorated by strong illumination light. Alternatively, in the normal mode, when various icons and the like are arranged, the region where the icons and the like are arranged may not emit light in the illumination mode. In particular, when the display device 102 is a self-luminous display device, image burn-in and the like can be reduced. In the illumination mode, when making a certain part of the region not emit light, as shown in Fig. 17, strong light emission is not performed in the part of the icon and the like, and strong light emission is performed in the region other than the part of the icon and the like to realize the illumination function. Or, in the illumination mode, as shown in Fig. 19, strong light emission is not performed in the region near where the icons and the like are arranged, and strong light emission is performed in the region excluding the vicinity where the icons and the like are arranged to realize the illumination function. Or, in the illumination mode, as shown in Fig. 19, strong light emission is not performed in the region near where the icons and the like are arranged, and strong light emission is performed in the region excluding the vicinity where the icons and the like are arranged to realize the illumination function.

[0067] Also, another region may be provided outside region 104 and region 106. As an example in that case, Fig. 20 shows an example where region 109 is provided. Here, for a television set​ An example of a case where a conversation is being held is shown. In area 109, an image of the call partner 110 is displayed. Area 109 is arranged near the camera unit 103. Therefore, when talking while looking at the image of the call partner 110, it is possible to capture an image with the camera unit 103 where the gazes match.

[0068] Note that various switches and buttons can be provided on the electronic device 101. For example, FIG. 16 shows an example of a case where a button 114 for returning to the home screen is arranged.

[0069] This embodiment describes an example of the basic principle. Therefore, a part or all of this embodiment can be freely combined with, applied to, or replaced by a part or all of other embodiments.

[0070] (Embodiment 2) In this embodiment, the configuration of an electronic device according to an aspect of the present invention will be described.

[0071] First, FIG. 21 shows an example of a rough internal configuration diagram of the electronic device 101.

[0072] The CPU 201 can perform various calculations and processes, and controls various parts.

[0073] In the storage device 203, at least one of various data, programs, or application software is stored. As an example, the storage device 203 is a storage device that can process non-volatile storage media such as flash memory, magnetic disks, CD-ROMs, DVDs, or magneto-optical disks. As shown in Embodiment 1 ​​​​​​​​​The application software (program) having the necessary functions is stored in the storage device 203, may be stored on the storage media used therein.

[0074] The storage device 205 stores various data, programs, or application software. As an example, the storage device 203 may include a DRAM. The data or programs stored in the storage device 205 are volatile storage devices such as Using the RAM, the CPU 201 can execute various processes. The application software (program) having such functions is stored in the storage device 203. It may be stored in.

[0075] The controller 207 can control the display device 209. The device 102 corresponds to a part or the whole of the display device 209. The display device 102 corresponds to the entirety of the display device 209 and the controller 207. The device 209 includes application software having the functions described in the first embodiment. It can display images and user interfaces used in (programs).

[0076] The external port 211 allows communication with the outside. By connecting a storage medium to the external port 211, various types of data can be stored on the removable storage medium. At least one of data and software (programs) can be stored. Alternatively, a removable storage device can be connected to the external port 211. Various data or software (programs, etc.) can be stored on the storage devices and storage media controlled by them. It is possible to save at least one of them (the log program). For example, the external port 211 can be connected to a storage device composed of a semiconductor memory or a magnetic memory, or a storage medium such as a CD or a DVD However, since what is connected to the external port 211 is removable, it is not always connected. Therefore, the application software (program) having the function as shown in Embodiment 1 may be stored in a removable storage medium, for example, something that can be connected to the external port 211.

[0077] The network control unit 213 can control a network such as the Internet. For example, a wired cable is connected to the network control unit 213 to construct a LAN. Alternatively, an antenna 215 is connected to the network control unit 213 to construct a wireless network. Thereby, data exchange can be performed. For example, by connecting to an external device via the network control unit 213, at least one of various data or software (program) can be saved, or at least one of various data or software (program) can be downloaded into the electronic device 101. Therefore, the application software (program) having the function as shown in Embodiment 1 may be downloaded via the network. Or, it may be executed on a destination device via the network, and the result may be displayed on the display device 102 of the electronic device 101.

[0078] The camera unit 217 can capture images. It can capture both still images and moving images. Also, by controlling the lens and the like, it is possible to capture images with magnification or reduction. It corresponds to a part or all of the camera unit 103 and the camera unit 217 shown in FIG. 1.

[0079] In this way, in the electronic device 101, various members are controlled and operating. And the application software (program) having the functions as shown in the first embodiment also controls the operations of the respective parts of the electronic device 101.

[0080] Next, FIG. 3 shows an example of the screen of the display device 102 when the electronic device 101 is started. Various icons are displayed on the screen. Each icon corresponds to application software that realizes various functions. For example, the icon 115A is the software of the camera and can execute the camera program. This software (program) can realize the functions as shown in the first embodiment. Therefore, this software (program) can control at least one of the camera unit 103, the display device 102, the camera unit 217, or the display device 209.

[0081] Also, the icon 115B is the software of the phone and can execute the phone program. For example, it can make a video call. This software can realize the functions as shown in the first embodiment. Therefore, this software (program) can control the camera unit 103, the display device 102, the camera unit 217, the display device 209, or ​​​​​​​​​​​, at least one of the network control unit 213, etc. can be controlled.

[0082] In addition, various icons are also displayed. In each application , for example, in SNS (Social Networking Service), mail, or WEB B services, etc., the functions as shown in Embodiment 1 can be utilized.

[0083] Such software (program) is stored in the storage device 203 or the storage device 205 either. Or such software (program) is stored in the storage medium among them . Or such software (program) can communicate via the external port 211 with a removable storage medium or storage device stored. For example, as a removable storage device, a memory card or a USB memory, etc. can be mentioned.

[0084] Also, such software (program) can be downloaded into the electronic device 101 via the network control unit 213 etc. The schematic diagram in that case is shown in FIG. 22 . The electronic device 101 is connected to the network 116, either by wire or wirelessly . A server 117 that can provide software is connected to the network 116 . The electronic device 101 can obtain, download, purchase , or rent the desired software (program) by accessing the server 117. Note that the electronic device 101 is not connected to the network 116, and instead, another computer 118 is connected to the network 116 ​​​ In some cases, by accessing the server 117, the computer 118 can obtain, download, purchase, or rent the desired software (program). Then, the software (program) can be transferred from the computer 118 to the electronic device 1 01 via a portable storage medium or the like.

[0085] This embodiment corresponds to a modification, addition, correction, deletion, application, generalization, or specialization of part or all of other embodiments. Therefore, part or all of this embodiment can be freely combined with, applied to, or replaced by part or all of other embodiments.

[0086] (Embodiment 3) In this embodiment, another configuration of the electronic device according to one aspect of the present invention will be described.

[0087] As shown in FIG. 23(A), the electronic device 101A has, for example, a display device 102A and a display device 102B. The area 106 is divided into two areas, for example, an area 106A and an area 106B, and is provided for the display device 102A and the display device 102B, respectively.

[0088] In FIG. 23(A), the area 106A and the area 106B are provided for the display device 102A and the display device 102B, respectively. However, one aspect of the present invention is not limited to this. For example, the area 106 may be provided only for either the display device 102A or the display device 102B.

[0089] ​​​​​​Here, a view from the side is shown in FIG. 23(B). As an example, the electronic device 101A can be bent at the center part. There is illumination light 107C irradiated from the region 106A of the display device 102A and illumination light 107D irradiated from the region 106B of the display device 102B. Here, by bending the electronic device 101A at the center part, the directions in which the illumination light 107C and the illumination light 107D are irradiated are different. Therefore, it becomes difficult for a shadow to be formed on the subject 105, and it becomes easier to take a clear image. For example, it can be bent at the center part. There is illumination light 107C irradiated from the region 106A of the display device 102A and illumination light 107D irradiated from the region 106B of the display device 102B. Here, by bending the electronic device 101A at the center part, the directions in which the illumination light 107C and the illumination light 107D are irradiated are different. Therefore, it becomes difficult for a shadow to be formed on the subject 105, and it becomes easier to take a clear image. There is illumination light 107C irradiated from the region 106A of the display device 102A and illumination light 107D irradiated from the region 106B of the display device 102B. Here, by bending the electronic device 101A at the center part, the directions in which the illumination light 107C and the illumination light 107D are irradiated are different. Therefore, it becomes difficult for a shadow to be formed on the subject 105, and it becomes easier to take a clear image. There is illumination light 107C irradiated from the region 106A of the display device 102A and illumination light 107D irradiated from the region 106B of the display device 102B. Here, by bending the electronic device 101A at the center part, the directions in which the illumination light 107C and the illumination light 107D are irradiated are different. Therefore, it becomes difficult for a shadow to be formed on the subject 105, and it becomes easier to take a clear image. There is illumination light 107C irradiated from the region 106A of the display device 102A and illumination light 107D irradiated from the region 106B of the display device 102B. Here, by bending the electronic device 101A at the center part, the directions in which the illumination light 107C and the illumination light 107D are irradiated are different. Therefore, it becomes difficult for a shadow to be formed on the subject 105, and it becomes easier to take a clear image. There is illumination light 1(07C irradiated from the region 106A of the display device 102A and illumination light 107D irradiated from the region 106B of the display device 102B. Here, by bending the electronic device 101A at the center part, the directions in which the illumination light 107C and the illumination light 107D are irradiated are different. Therefore, it becomes difficult for a shadow to be formed on the subject 105, and it becomes easier to take a clear image.

[0090] This embodiment has described an example of the basic principle. Therefore, part or all of this embodiment can be freely combined with, applied to, or replaced with part or all of other embodiments. This embodiment has described an example of the basic principle. Therefore, part or all of this embodiment can be freely combined with, applied to, or replaced with part or all of other embodiments. This embodiment has described an example of the basic principle. Therefore, part or all of this embodiment can be freely combined with, applied to, or replaced with part or all of other embodiments.

[0091] (Embodiment 4) In this embodiment, a configuration example of a display device according to an aspect of the present invention will be described.

[0092] [Configuration Example] FIG. 24(A) is a top view of a display device according to an aspect of the present invention, and FIG. 24(B) is a circuit diagram for explaining a pixel circuit that can be used when a liquid crystal element is applied to a pixel of the display device according to an aspect of the present invention. Further, FIG. 24(C) is a circuit diagram for explaining a pixel circuit that can be used when an organic EL element is applied to a pixel of the display device according to an aspect of the present invention. FIG. 24(A) is a top view of a display device according to an aspect of the present invention, and FIG. 24(B) is a circuit diagram for explaining a pixel circuit that can be used when a liquid crystal element is applied to a pixel of the display device according to an aspect of the present invention. Further, FIG. 24(C) is a circuit diagram for explaining a pixel circuit that can be used when an organic EL element is applied to a pixel of the display device according to an aspect of the present invention. FIG. 24(A) is a top view of a display device according to an aspect of the present invention, and FIG. 24(B) is a circuit diagram for explaining a pixel circuit that can be used when a liquid crystal element is applied to a pixel of the display device according to an aspect of the present invention. Further, FIG. 24(C) is a circuit diagram for explaining a pixel circuit that can be used when an organic EL element is applied to a pixel of the display device according to an aspect of the present invention. FIG. 24(A) is a top view of a display device according to an aspect of the present invention, and FIG. 24(B) is a circuit diagram for explaining a pixel circuit that can be used when a liquid crystal element is applied to a pixel of the display device according to an aspect of the present invention. Further, FIG. 24(C) is a circuit diagram for explaining a pixel circuit that can be used when an organic EL element is applied to a pixel of the display device according to an aspect of the present invention. FIG. 24(A) is a top view of a display device according to an aspect of the present invention, and FIG. 24(B) is a circuit diagram for explaining a pixel circuit that can be used when a liquid crystal element is applied to a pixel of the display device according to an aspect of the present invention. Further, FIG. 24(C) is a circuit diagram for explaining a pixel circuit that can be used when an organic EL element is applied to a pixel of the display device according to an aspect of the present invention.

[0093] The transistors arranged in the pixel portion can be formed according to various methods, for example, the methods described in other embodiments. Further, the transistor is an n-channel type. The transistors arranged in the pixel portion can be formed according to various methods, for example, the methods described in other embodiments. Further, the transistor is an n-channel type. Since it is easy to do so, among the drive circuits, a drive circuit composed of n-channel transistors can be formed on the same substrate as the transistors in the pixel portion. By using the transistors shown in other embodiments for the pixel portion and the drive circuit in this way, a highly reliable display device can be provided. An example of a top view of an active matrix type display device is shown in Fig. 24(A). On a substrate 400 of the display device, there are a pixel portion 401, a first scan line drive circuit 402, a second scan line drive circuit 403, and a signal line drive circuit 404. In the pixel portion 401, a plurality of signal lines extend from the signal line drive circuit 404 and are arranged, and a plurality of scan lines extend from the first scan line drive circuit 402 and the second scan line drive circuit 403 and are arranged. In the intersection region of the scan lines and the signal lines, pixels each having a display element are provided in a matrix. Further, the substrate 400 of the display device is connected to a timing control circuit (also referred to as a controller or a control IC) via a connection portion such as an FPC (Flexible Printed Circuit). By using the transistors shown in other embodiments for the pixel portion and the drive circuit, a highly reliable display device can be provided.

[0094] In Fig. 24(A), the first scan line drive circuit 402, the second scan line drive circuit 403, and the signal line drive circuit 404 are formed on the same substrate 400 as the pixel portion 401. Therefore, the number of components such as drive circuits provided externally is reduced, so that cost reduction can be achieved. Also, when a drive circuit is provided outside the substrate 400, it is necessary to extend the wiring, and the number of connections between the wirings increases. When the drive circuit is provided on the same substrate 400, the number of connections between the wirings can be reduced, and the reliability or the yield can be improved. On the substrate 400 of the display device, there are a pixel portion 401, a first scan line drive circuit 402, a second scan line drive circuit 403, and a signal line drive circuit 404. In the pixel portion 401, a plurality of signal lines extend from the signal line drive circuit 404 and are arranged, and a plurality of scan lines extend from the first scan line drive circuit 402 and the second scan line drive circuit 403 and are arranged. In the intersection region of the scan lines and the signal lines, pixels each having a display element are provided in a matrix. Also, the substrate 400 of the display device is connected to a timing control circuit (also referred to as a controller or a control IC) via a connection portion such as an FPC (Flexible Printed Circuit).

[0095] In Fig. 24(A), the first scan line drive circuit 402, the second scan line drive circuit 403, and the signal line drive circuit 404 are formed on the same substrate 400 as the pixel portion 401. Therefore, the number of components such as drive circuits provided externally is reduced, so that cost reduction can be achieved. Also, when a drive circuit is provided outside the substrate 400, it is necessary to extend the wiring, and the number of connections between the wirings increases. When the drive circuit is provided on the same substrate 400, the number of connections between the wirings can be reduced, and the reliability or the yield can be improved.

[0096] [Liquid Crystal Display Device] Further, an example of the circuit configuration of a pixel is shown in FIG. 24(B). Here, it is applicable to the pixel of a VA type liquid crystal display device. A pixel circuit that can be applied to the pixel is shown.

[0097] This pixel circuit can be applied to a configuration having a plurality of pixel electrode layers in one pixel. Each pixel electrode layer is connected to a different transistor, and each transistor is configured to be driven by a different gate signal. Thus, the signals applied to the individual pixel electrode layers of the pixel designed with multi-domain can be controlled independently. The gate wiring 412 of the transistor 416 and the gate wiring 413 of the transistor 417 are separated so that different gate signals can be applied thereto. On the other hand, the source electrode layer or the drain electrode layer 414 that functions as a data line is commonly used by the transistor 416 and the transistor 417. The transistor 416 and the transistor 417 can appropriately use the transistors described in other embodiments. Thus, a highly reliable liquid crystal display device can be provided.

[0098] The shape of the first pixel electrode layer electrically connected to the transistor 416 and the shape of the second pixel electrode layer electrically connected to the transistor 417 will be described. The shapes of the first pixel electrode layer and the second pixel electrode layer are separated by a slit. The first pixel electrode layer has a shape that spreads in a V shape, and the second pixel electrode layer is formed so as to surround the outside of the first pixel electrode layer. The gate electrode of the transistor 416 is connected to the gate wiring 412, and the gate electrode of the transistor 417 is connected to the gate wiring 413. The gate wiring 412 and the gate wiring 41 The source electrode layer or the drain electrode layer 414 that functions as a data line is commonly used by the transistor 416 and the transistor 417. The transistor 416 and the transistor 417 can appropriately use the transistors described in other embodiments. Thus, a highly reliable liquid crystal display device can be provided. The transistor 416 and the transistor 417 can appropriately use the transistors described in other embodiments. Thus, a highly reliable liquid crystal display device can be provided. The shape of the first pixel electrode layer electrically connected to the transistor 416 and the shape of the second pixel electrode layer electrically connected to the transistor 417 will be described. The shapes of the first pixel electrode layer and the second pixel electrode layer are separated by a slit. The first pixel electrode layer has a shape that spreads in a V shape, and the second pixel electrode layer is formed so as to surround the outside of the first pixel electrode layer. The gate electrode of the transistor 416 is connected to the gate wiring 412, and the gate electrode of the transistor 417 is connected to the gate wiring 413. The gate wiring 412 and the gate wiring 41

[0099] The shape of the first pixel electrode layer electrically connected to the transistor 416 and the shape of the second pixel electrode layer electrically connected to the transistor 417 will be described. The shapes of the first pixel electrode layer and the second pixel electrode layer are separated by a slit. The first pixel electrode layer has a shape that spreads in a V shape, and the second pixel electrode layer is formed so as to surround the outside of the first pixel electrode layer. The gate electrode of the transistor 416 is connected to the gate wiring 412, and the gate electrode of the transistor 417 is connected to the gate wiring 413. The gate wiring 412 and the gate wiring 41 The shape of the first pixel electrode layer electrically connected to the transistor 416 and the shape of the second pixel electrode layer electrically connected to the transistor 417 will be described. The shapes of the first pixel electrode layer and the second pixel electrode layer are separated by a slit. The first pixel electrode layer has a shape that spreads in a V shape, and the second pixel electrode layer is formed so as to surround the outside of the first pixel electrode layer. The shape of the first pixel electrode layer electrically connected to the transistor 416 and the shape of the second pixel electrode layer electrically connected to the transistor 417 will be described. The shapes of the first pixel electrode layer and the second pixel electrode layer are separated by a slit. The first pixel electrode layer has a shape that spreads in a V shape, and the second pixel electrode layer is formed so as to surround the outside of the first pixel electrode layer.

[0100] The gate electrode of the transistor 416 is connected to the gate wiring 412, and the gate electrode of the transistor 417 is connected to the gate wiring 413. The gate wiring 412 and the gate wiring 41 The gate electrode of the transistor 416 is connected to the gate wiring 412, and the gate electrode of the transistor 417 is connected to the gate wiring 413. The gate wiring 412 and the gate wiring 41 Apply three different gate signals to make the operation timings of transistor 416 and transistor 417 different, and the liquid crystal alignment can be controlled.

[0101] Also, a holding capacitor may be formed by a capacitance wiring 410, a gate insulating film that functions as a dielectric, and a capacitance electrode that is electrically connected to the first pixel electrode layer or the second pixel electrode layer.

[0102] The multi-domain structure includes a first liquid crystal element 418 and a second liquid crystal element 419 in one pixel The first liquid crystal element 418 is composed of a first pixel electrode layer, a counter electrode layer, and a liquid crystal layer therebetween The second liquid crystal element 419 is composed of a second pixel electrode layer, a counter electrode layer, and a liquid crystal layer therebetween be.

[0103] Note that the pixel circuit shown in FIG. 24(B) is not limited to this. For example, in FIG. 24(B) New switches, resistance elements, capacitance elements, transistors, sensors, or logic circuits etc. may be added to the shown pixels.

[0104] 〔Organic EL display device〕 Another example of the circuit configuration of a pixel is shown in FIG. 24(C). Here, the pixel structure of a display device using an organic EL element is shown.

[0105] In an organic EL element, by applying a voltage to a light-emitting element, electrons are injected from one of a pair of electrodes, holes are injected from the other into a layer containing a light-emitting organic compound, and a current flows. And then When electrons and holes recombine, the light-emitting organic compound forms an excited state, and light is emitted when the excited state returns to the ground state. From such a mechanism, such a light emitting element is called a current-excited light-emitting element.

[0106] FIG. 24(C) is a diagram showing an example of an applicable pixel circuit. Here, an example of using two n-channel type transistors in one pixel is shown. Note that the metal oxide film of one aspect of the present invention can be used for the channel formation region of an n-channel type transistor. Further, the pixel circuit can apply digital time gradation driving.

[0107] The configuration of the applicable pixel circuit and the operation of the pixel when digital time gradation driving is applied will be described.

[0108] Pixel 420 has a switching transistor 421, a driving transistor 422, a light emitting element 424, and a capacitive element 423. The switching transistor 421 has a gate electrode layer connected to the scanning line 426, a first electrode (one of the source electrode layer and the drain electrode layer) connected to the signal line 425, and a second electrode (the other of the source electrode layer and the drain electrode layer) connected to the gate electrode layer of the driving transistor 422. The driving transistor 422 has a gate electrode layer connected to the power supply line 427 via the capacitive element 423, a first electrode connected to the power supply line 427, and a second electrode connected to the first electrode (pixel electrode) of the light emitting element 424 . The second electrode of the light emitting element 424 corresponds to the common electrode 428. The common electrode 428 is electrically connected to a common potential line formed on the same substrate.

[0109] The switching transistor 421 and the driving transistor 422 can appropriately use the transistors described in other embodiments . Thereby, a highly reliable organic EL display device can be provided.

[0110] The potential of the second electrode (common electrode 428) of the light-emitting element 424 is set to a low power supply potential. Note that the low power supply potential is a potential that satisfies the low power supply potential < high power supply potential with reference to the high power supply potential supplied to the power supply line 427, and for example, GND, 0V, etc. may be set as the low power supply potential. The high power supply potential and the low power supply potential are set so as to be equal to or higher than the forward threshold voltage of the light-emitting element 424, and by applying the potential difference to the light-emitting element 424, a current is passed through the light-emitting element 424 to cause it to emit light. Note that the forward voltage of the light-emitting element 424 refers to the voltage in the case of a desired luminance and includes at least the forward threshold voltage.

[0111] Note that the capacitor element 423 can be omitted by substituting for the gate capacitance of the driving transistor 422. Regarding the gate capacitance of the driving transistor 422, a capacitance may be formed between the channel formation region and the gate electrode layer.

[0112] Next, the signal input to the driving transistor 422 will be described. In the case of the voltage input voltage driving method, a video signal that causes the driving transistor 422 to be in one of two states, either fully on or off, is input to the driving transistor 422. Note that in order to operate the driving transistor 422 in the linear region, a voltage higher than the voltage of the power supply line 427 is applied to the gate electrode layer of the driving transistor 422. Also, a voltage equal to or higher than the value obtained by adding the threshold voltage Vth of the driving transistor 422 to the power supply line voltage is applied to the signal line 425.

[0113] When performing analog gradation driving, a voltage equal to or higher than the value obtained by adding the threshold voltage Vth of the driving transistor 422 to the forward voltage of the light-emitting element 4424 is applied to the gate electrode layer of the driving transistor 422. Apply. Note that the video signal is input so that the driving transistor 422 operates in the saturation region. Then, a current is passed through the light-emitting element 424. Also, to operate the driving transistor 422 in the saturation region, the potential of the power supply line 427 is made higher than the gate potential of the driving transistor 422. By using an analog video signal, a current corresponding to the video signal is passed through the light-emitting element 424, and analog gradation driving can be performed.

[0114] Note that the configuration of the pixel circuit is not limited to the pixel configuration shown in FIG. 24(C). For example, in the pixel circuit shown in FIG. 24(C), a switch, a resistance element, a capacitance element, a sensor, a transistor, or a logic circuit, etc. may be added.

[0115] When applying the transistors exemplified in other embodiments to the circuit exemplified in FIG. 24, the source electrode (first electrode) is electrically connected to the low potential side, and the drain electrode (second electrode) is electrically connected to the high potential side. Furthermore, the potential of the first gate electrode is controlled by a control circuit or the like, and a configuration in which the potential lower than the potential applied to the source electrode is input to the second gate electrode by a wiring (not shown) etc. may be used as long as it can input the potential exemplified above.

[0116] For example, in this specification etc., the display element, the display device which is a device having the display element, the light-emitting element, and the light-emitting device which is a device having the light-emitting element can use various forms or have various elements.

[0117] This embodiment corresponds to a modification, addition, correction, deletion, application, generalization, or specialization of part or all of other embodiments. Therefore, this embodiment For some or all of them, they can be freely combined with, applied to, or replaced by some or all of other embodiments and implemented accordingly. It can be applied, replaced, and implemented.

[0118] (Embodiment 5) In this embodiment, a display module to which a semiconductor device according to one aspect of the present invention is applied will be described with reference to FIG. 25. The description will be made with reference to FIG. 25.

[0119] The display module 8000 shown in FIG. 25 includes a touch panel 8004 connected to an FPC 8003, a display panel 8006 connected to an FPC 8005, a backlight unit 8007, a frame 8009, a printed circuit board 8010, and a battery 8011 between an upper cover 8001 and a lower cover 8002. Note that the backlight unit 8007, the battery 8011, the touch panel 8004, etc. may not be provided. A semiconductor device according to one aspect of the present invention can be used, for example, for the display panel 8006. The upper cover 8001 and the lower cover 8002 can be appropriately changed in shape and dimensions according to the sizes of the touch panel 8004 and the display panel 8006. The touch panel 8004 can be used by superimposing a resistive film type or a capacitive type touch panel on the display panel 8006. Also, it is possible to provide a touch panel function on the counter substrate (sealing substrate) of the display panel 8006. Or, it is possible to provide an optical sensor in each pixel of the display panel 8006 to form an optical touch panel. Or, a touch sensor electrode can be provided in each pixel of the display panel 8006 to form a capacitive type touch panel.

[0120] A semiconductor device according to one aspect of the present invention can be used, for example, for the display panel 8006.

[0121] The upper cover 8001 and the lower cover 8002 can be appropriately changed in shape and dimensions according to the sizes of the touch panel 8004 and the display panel 8006. The touch panel 8004 can be a resistive film type or a capacitive type touch panel superimposed on the display panel 8006. It is also possible to provide a touch panel function on the counter substrate (sealing substrate) of the display panel 8006. Or, it is possible to provide an optical sensor in each pixel of the display panel 8006 to make it an optical touch panel.

[0122] The touch panel 8004 can be a resistive film type or a capacitive type touch panel superimposed on the display panel 8006. Also, it is possible to provide a touch panel function on the counter substrate (sealing substrate) of the display panel 8006. Or, it is possible to provide an optical sensor in each pixel of the display panel 8006 to form an optical touch panel. Or, a touch sensor electrode can be provided in each pixel of the display panel 8006 to form a capacitive type touch panel. It is also possible to provide a touch panel function on the counter substrate (sealing substrate) of the display panel 8006. Or, it is possible to provide an optical sensor in each pixel of the display panel 8006 to make it an optical touch panel. Or, it is possible to provide an optical sensor in each pixel of the display panel 8006 to form an optical touch panel. Or, a touch sensor electrode can be provided in each pixel of the display panel 8006 to form a capacitive type touch panel. It may also be a panel.

[0123] The backlight unit 8007 includes a light source 8008. It may be provided at the end of the light source unit 8007 and may be configured to use a light diffusion plate.

[0124] The frame 8009 has a function of protecting the display panel 8006 and also a function of preventing the movement of the printed circuit board 8010. It also functions as an electromagnetic shield to block electromagnetic waves generated by the operation of the The frame 8009 may also function as a heat sink.

[0125] The printed circuit board 8010 includes a power supply circuit, a signal circuit for outputting a video signal and a clock signal. The power supply circuit is provided with a signal processing circuit. Alternatively, the power source may be a battery 8011 provided separately. 1 can be omitted if commercial power is used.

[0126] The display module 8000 also includes components such as a polarizing plate, a retardation plate, and a prism sheet. Additional ones may be provided.

[0127] This embodiment may be modified, added, revised, deleted, or added to any or all of the other embodiments. This corresponds to application, superordinate conception, or subordinate conception. Part or all of the invention may be freely combined with part or all of other embodiments or applied appropriately. It can be used or substituted for the above.

[0128] (Sixth embodiment) In this embodiment, a touch panel that can be applied to an electronic device of one embodiment of the present invention will be described. The configuration will be described with reference to FIG. 26. Note that this touch panel may have a foldable configuration.

[0129] FIG. 26(A) illustrates the structure of a touch panel applicable to an electronic device according to an aspect of the present invention as a front view.

[0130] FIG. 26(B) is a cross-sectional view taken along cutting lines A-B and C-D of FIG. 26(A). .

[0131] FIG. 26(C) is a cross-sectional view taken along cutting line E-F of FIG. 26(A).

[0132] <Explanation of the front view> The touch panel 300 exemplified in this embodiment has a display unit 301 (see FIG. 26(A)). (Reference).

[0133] The display unit 301 includes a plurality of pixels 302 and a plurality of imaging pixels 308. The imaging pixel 308 can detect a finger or the like touching the display unit 301. Thus, the imaging pixel 308 can be used to form a touch sensor.

[0134] The pixel 302 includes a plurality of sub-pixels (for example, sub-pixel 302R), and the sub-pixel includes a light-emitting element and a pixel circuit capable of supplying power to drive the light-emitting element.

[0135] The pixel circuit is electrically connected to a wiring capable of supplying a selection signal and a wiring capable of supplying an image signal.

[0136] Further, the touch panel 300 includes a scanning line driving circuit 303g(1) capable of supplying a selection signal to the pixel 302 and an image signal line driving circuit 303s(1) capable of supplying an image signal to the pixel 302. ​

[0137] The imaging pixel 308 includes a photoelectric conversion element and an imaging pixel circuit that drives the photoelectric conversion element. .

[0138] The imaging pixel circuit is provided with wiring that can supply a control signal and a power supply potential. It can be electrically connected with wiring.

[0139] The control signal is used to select an imaging pixel circuit that reads out the recorded imaging signal, for example. a signal that can initialize the imaging pixel circuit; and a signal that can initialize the imaging pixel circuit. Examples include a signal that can determine the time to be detected.

[0140] The touch panel 300 includes an imaging pixel driver that can provide control signals to the imaging pixels 308. and an image pickup signal line drive circuit 303s(2) that reads out the image pickup signal. .

[0141] <Explanation of the cross-sectional view> The touch panel 300 includes a substrate 310 and an opposing substrate 370 that faces the substrate 310. (See FIG. 26(B)).

[0142] The substrate 310 includes a flexible substrate 310b and a barrier layer 310c that prevents impurities from diffusing into the light-emitting element. The film 310a and the adhesive layer 310c that bonds the substrate 310b and the barrier film 310a are laminated. It is a laminate obtained by

[0143] The opposing substrate 370 is made up of a flexible substrate 370b and a barrier layer 370c that prevents impurities from diffusing into the light emitting element. The rear film 370a and the adhesive layer 370c that bonds the substrate 370b and the barrier film 370a It is a laminated body (see FIG. 26(B)).

[0144] The sealing material 360 bonds the opposing substrate 370 and the substrate 310 together. Also, the sealing material 360 has a refractive index greater than that of air and also serves as an optical bonding layer. The pixel circuit and the light-emitting element (for example, the first light-emitting element 350R) are located between the substrate 310 and the opposing substrate 370.

[0145] 《Configuration of Pixel》 The pixel 302 has sub-pixels 302R, 302G, and 302B (see FIG. 2 6(C)). Also, the sub-pixel 302R includes a light-emitting module 380R, the sub-pixel 302 G includes a light-emitting module 380G, and the sub-pixel 302B includes a light-emitting module 380B. .

[0146] For example, the sub-pixel 302R includes a pixel circuit including the first light-emitting element 350R and a transistor 302t that can supply power to the first light-emitting element 350R (see FIG. 26(B) ). Also, the light-emitting module 380R includes the first light-emitting element 350R and an optical element (for example, a coloring layer 367R). .

[0147] The first light-emitting element 350R has a lower electrode 351R, an upper electrode 352, and a layer 353 containing a light-emitting organic compound between the lower electrode 351R and the upper electrode 352 (see FIG. 26(C) ). .

[0148] The layer 353 containing the light-emitting organic compound includes a light-emitting unit 353a, a light-emitting unit 353b and an intermediate layer 354 between the light-emitting unit 353a and the light-emitting unit 353b.

[0149] The light-emitting module 380R has a first coloring layer 367R on the opposing substrate 370. The coloring layer may transmit light having a specific wavelength, such as red, green, or blue, etc. Those that selectively transmit the emitted light can be used. Alternatively, a region that directly transmits the light emitted by the light-emitting element may be provided. The region may be provided so as to directly transmit the light.

[0150] For example, the light-emitting module 380R includes a first light-emitting element 350R and a first colored layer 367R and a sealing material 360 in contact with the first colored layer 367R.

[0151] The first colored layer 367R is located at a position overlapping the first light-emitting element 350R. As a result, a part of the light emitted by the first light-emitting element 350R passes through the sealing material 360 that also serves as an optical bonding layer and the first colored layer 367R and is emitted to the outside of the light-emitting module 380R as shown by the arrow in the figure. is emitted.

[0152] Here, an example in which a light-emitting element is used as the display element has been shown, but one aspect of the present invention is not limited to this.

[0153] For example, in this specification and the like, a display element, a display device that is a device having the display element, a light-emitting element, and a light-emitting device that is a device having the light-emitting element can use various forms or have various elements. As an example of a display element, a display device, a light-emitting element, or a light-emitting device is an EL (electroluminescence) element (including an EL element containing an organic substance and an inorganic substance, an organic E L element, an inorganic EL element), an LED (white LED, red LED, green LED, blue LED any), a transistor (a transistor that emits light according to an electric current), an electron-emitting element, a liquid crystal element, electronic ink, an electrophoretic element, a grating light valve (GLV), a plasma display panel (PDP), a display element using MEMS (micro-electro-mechanical system), a digital micromirror device (DMD), a DMS (digital micro- system), etc. Shutter), MIRASOL (registered trademark), IMOD (Interference Module -tion) element, shutter-type MEMS display element, optical interference-type MEMS display element, electrowetting element, piezoelectric ceramic display, carbon nanotube, etc., there are those having a display medium in which contrast, brightness, reflectance, transmittance, etc. change due to electromagnetic action As an example of a display device using an EL element, there is an EL display etc. As an example of a display device using an electron emission element, there is a field emission de vice (FED) or SED method flat panel display (SED: Surface-c onduction Electron-emitter Display), etc. As an example of a display device using a liquid crystal element, there are liquid crystal displays (transmissive liquid crystal displays , transflective liquid crystal displays, reflective liquid crystal displays, direct-view liquid crystal displays, projection type liquid crystal displays), etc. As an example of a display device using electronic ink or an electrophoretic element, there is electronic paper, etc. In addition, when realizing a transflective liquid crystal display or a reflective liquid crystal display , a part or all of the pixel electrodes may have the function of a reflective electrode. For example, a part or all of the pixel electrodes may have aluminum, silver, etc. Further, in that case, it is possible to provide a storage circuit such as SRAM under the reflective electrode. This can further reduce power consumption.

[0154] 《Configuration of Touch Panel》 The touch panel 300 has a light-shielding layer 367BM on the counter substrate 370. The light-shielding layer 367B M is provided so as to surround the colored layer (for example, the first colored layer 367R).

[0155] The touch panel 300 includes an antireflection layer 367p disposed at a position overlapping the display unit 301. As the antireflection layer 367p, for example, a circularly polarized plate can be used.

[0156] The touch panel 300 includes an insulating film 321. The insulating film 321 covers the transistor 302t. Note that the insulating film 321 can be used as a layer for flattening the unevenness caused by the pixel circuit. Further, an insulating film in which a layer capable of suppressing the diffusion of impurities into the transistor 302t or the like is stacked can be applied to the insulating film 321.

[0157] The touch panel 300 has a light-emitting element (for example, the first light-emitting element 350R) on the insulating film 321.

[0158] The touch panel 300 has a partition wall 328 overlapping the end of the lower electrode 351R on the insulating film 321 (see FIG. 26(C)). Further, a spacer 329 for controlling the distance between the substrate 310 and the counter substrate 370 is provided on the partition wall 328.

[0159] <<Configuration of Image Signal Line Driving Circuit>> The image signal line driving circuit 303s(1) includes a transistor 303t and a capacitor 303c. Note that the driving circuit can be formed on the same substrate in the same process as the pixel circuit. As shown in FIG. 26(B), the transistor 303t may have a second gate on the insulating film 321. The second gate may be electrically connected to the gate of the transistor 303t, or different potentials may be applied thereto. Further, if necessary, the second gate It may be provided in the transistor 308t, the transistor 302t, etc.

[0160] 《Configuration of Imaging Pixel》 The imaging pixel 308 includes a photoelectric conversion element 308p and an imaging pixel circuit for detecting the light irradiated on the photoelectric conversion element 308p. Further, the imaging pixel circuit includes the transistor 308t. including.

[0161] For example, a pin-type photodiode can be used as the photoelectric conversion element 308p.

[0162] 《Other Configurations》 The touch panel 300 includes a wiring 311 that can supply signals, and the terminal 319 is provided on the wiring 311. Note that an FPC 309(1) that can supply signals such as an image signal and a synchronization signal is electrically connected to the terminal 319. connected.

[0163] Note that a printed wiring board (PWB) may be attached to the FPC 309(1). Yes.

[0164] Transistors formed in the same process can be applied to transistors such as the transistor 302t, the transistor 303 t, and the transistor 308t.

[0165] As the configuration of the transistor, a transistor having a structure such as a bottom gate type or a top gate type can be applied. transistor.

[0166] In addition to the gate, source, and drain of the transistor, materials that can be used for various wirings and electrodes constituting the touch panel include aluminum, titanium, chromium, nickel kel, copper, yttrium, zirconium, molybdenum, silver, tantalum, or tungsten sten. A single metal consisting of this, or an alloy having this as a main component, is used as a single-layer structure or a laminated structure. For example, a single-layer structure of an aluminum film containing silicon, a two-layer structure in which an aluminum film is laminated on a titanium film A two-layer structure in which an aluminum film is laminated on a tungsten film, a two-layer structure in which a copper-magnesium A two-layer structure in which a copper film is laminated on a sodium-aluminum alloy film, a two-layer structure in which a copper film is laminated on a titanium film A two-layer structure in which a copper film is laminated on a tungsten film, a titanium film or a titanium nitride film And an aluminum film or a copper film is laminated on the titanium film or the titanium nitride film, and Furthermore, a three-layer structure in which a titanium film or a titanium nitride film is formed thereon, a molybdenum film or a nitride A molybdenum film, and an aluminum film or a copper film is laminated on the molybdenum film or the molybdenum nitride film, and Furthermore, a three-layer structure in which a molybdenum film or a molybdenum nitride film is formed thereon There are structures and the like. In addition, a transparent conductive material containing indium oxide, tin oxide, or zinc oxide may be used. In addition, when using copper containing manganese, it is preferable because the controllability of the shape by etching is enhanced.

[0167] For the semiconductor in which the channels of transistors such as transistor 302t, transistor 303t, and transistor 308t are formed, as an example, it is preferable to use silicon. Although amorphous silicon may be used as the silicon, it is particularly preferable to use silicon having crystallinity. For example, it is preferable to use microcrystalline silicon, polycrystalline silicon, single crystal silicon, etc. In particular, polycrystalline silicon can be formed at a lower temperature than single crystal silicon, and And has a higher field effect mobility and higher reliability than amorphous silicon. By applying such a polycrystalline semiconductor to a pixel, the aperture ratio of the pixel can be improved. ​​​Even when having extremely high-definition pixels, it is possible to form the gate drive circuit and the source drive circuit on the same substrate as the pixels, reducing the number of components constituting the electronic device.

[0168] Here, for semiconductor devices such as the pixels included in each display area provided in the display device and the transistors used in each drive circuit, it is preferable to apply an oxide semiconductor. In particular, it is preferable to apply an oxide semiconductor having a larger bandgap than silicon. Using a semiconductor material having a wider bandgap and a smaller carrier density than silicon is preferable because it can reduce the current in the off state of the transistor.

[0169] For example, as the above oxide semiconductor, it is preferable to contain at least indium (In) or zinc (Zn). More preferably, it contains an oxide represented by In-M-Zn system oxide (M is a metal such as Al, Ti, Ga, Ge, Y, Zr, Sn, La, Ce or Hf).

[0170] In particular, as the semiconductor layer, it is preferable to use an oxide semiconductor film having a plurality of crystal parts, the c-axis of the crystal part is oriented perpendicular to the surface to be formed of the semiconductor layer or the upper surface of the semiconductor layer, and there is no grain boundary between adjacent crystal parts.

[0171] Since such an oxide semiconductor has no crystal grain boundaries, it is possible to suppress cracks from occurring in the oxide semiconductor film due to stress when the display panel is curved. Therefore, such an oxide semiconductor can be preferably used for a flexible display panel that is curved and used.

[0172] By using such a material as the semiconductor layer, variations in electrical characteristics are suppressed, and a transistor with high reliability can be realized. A transistor with high reliability can be realized.

[0173] In addition, due to its low off-current, it is possible to hold the charge accumulated in the capacitor through the transistor over a long period of time. By applying such a transistor to a pixel, it is also possible to stop the driving circuit while maintaining the gradation of the image displayed in each display area. As a result, an electronic device with extremely low power consumption can be realized. In addition, due to its low off-current, it is possible to hold the charge accumulated in the capacitor through the transistor over a long period of time. By applying such a transistor to a pixel, it is also possible to stop the driving circuit while maintaining the gradation of the image displayed in each display area. As a result, an electronic device with extremely low power consumption can be realized. In addition, due to its low off-current, it is possible to hold the charge accumulated in the capacitor through the transistor over a long period of time. By applying such a transistor to a pixel, it is also possible to stop the driving circuit while maintaining the gradation of the image displayed in each display area. As a result, an electronic device with extremely low power consumption can be realized. In addition, due to its low off-current, it is possible to hold the charge accumulated in the capacitor through the transistor over a long period of time. By applying such a transistor to a pixel, it is also possible to stop the driving circuit while maintaining the gradation of the image displayed in each display area. As a result, an electronic device with extremely low power consumption can be realized.

[0174] Note that the preferred form of the oxide semiconductor applicable to the semiconductor layer and its forming method will be described in detail in the following embodiments. Note that the preferred form of the oxide semiconductor applicable to the semiconductor layer and its forming method will be described in detail in the following embodiments.

[0175] Here, a method for forming a flexible light-emitting panel will be described.

[0176] Here, for the sake of convenience, a configuration including pixels and a driving circuit, or a configuration including optical members such as color filters will be referred to as an element layer. The element layer includes, for example, a display element, and may include elements such as wirings electrically connected to the display element, transistors used for pixels and circuits, etc. Here, for the sake of convenience, a configuration including pixels and a driving circuit, or a configuration including optical members such as color filters will be referred to as an element layer. The element layer includes, for example, a display element, and may include elements such as wirings electrically connected to the display element, transistors used for pixels and circuits, etc. Here, for the sake of convenience, a configuration including pixels and a driving circuit, or a configuration including optical members such as color filters will be referred to as an element layer. The element layer includes, for example, a display element, and may include elements such as wirings electrically connected to the display element, transistors used for pixels and circuits, etc. Here, for the sake of convenience, a configuration including pixels and a driving circuit, or a configuration including optical members such as color filters will be referred to as an element layer. The element layer includes, for example, a display element, and may include elements such as wirings electrically connected to the display element, transistors used for pixels and circuits, etc.

[0177] Also, here, a support having an insulating surface on which the element layer is formed will be referred to as a base material. Also, here, a support having an insulating surface on which the element layer is formed will be referred to as a base material.

[0178] As a method for forming an element layer on a base material having a flexible insulating surface, there are a method of directly forming the element layer on the base material, and a method of forming the element layer on a support base material having a different rigidity from the base material, and then peeling the element layer from the support base material and transferring the element layer to the base material. As a method for forming an element layer on a base material having a flexible insulating surface, there are a method of directly forming the element layer on the base material, and a method of forming the element layer on a support base material having a different rigidity from the base material, and then peeling the element layer from the support base material and transferring the element layer to the base material. As a method for forming an element layer on a base material having a flexible insulating surface, there are a method of directly forming the element layer on the base material, and a method of forming the element layer on a support base material having a different rigidity from the base material, and then peeling the element layer from the support base material and transferring the element layer to the base material.

[0179] When the material constituting the substrate has heat resistance against the heat applied in the element layer formation process , it is preferable to form the element layer directly on the substrate because the process is simplified. At this time, when the element layer is formed with the substrate fixed to the support substrate, it is preferable because the transfer within the apparatus and between apparatuses becomes easy.

[0180] Also, when using the method of transferring to the substrate after forming the element layer on the support substrate, first a release layer and an insulating layer are laminated on the support substrate, and the element layer is formed on the insulating layer. Subsequently, the support substrate and the element layer are peeled off and transferred to the substrate. At this time, a material that causes peeling at the interface between the support substrate and the release layer, the interface between the release layer and the insulating layer, or within the release layer may be selected.

[0181] For example, a layer containing a high melting point metal material such as tungsten as the release layer and a layer containing an oxide of the metal material are laminated and used, and it is preferable to use a layer in which a plurality of silicon nitride or silicon oxynitride layers are laminated on the release layer. Using a high melting point metal material is preferable because the degree of freedom in the element layer formation process increases.

[0182] Peeling may be performed by applying mechanical force, etching the release layer, or dropping a liquid onto a part of the peeling interface and allowing it to penetrate the entire peeling interface. Or peeling may also be performed by applying heat to the peeling interface using the difference in thermal expansion.

[0183] Also, when peeling is possible at the interface between the support substrate and the insulating layer, the release layer may not be provided. For example, using glass as the support substrate and an organic resin such as polyimide as the insulating layer , a peeling starting point is formed by locally heating a part of the organic resin using a laser beam or the like , peeling may be performed at the interface between the glass and the insulating layer. Alternatively, a metal layer is provided between the support substrate and the insulating layer made of an organic resin, and the metal layer is heated by passing an electric current through the metal layer, so that peeling may be performed at the interface between the metal layer and the insulating layer. At this time, the insulating layer made of an organic resin can be used as a substrate. Examples of the flexible substrate include polyester resins such as polyethylene terephthalate (PET) and polyethylene naphthalate (PEN), polyacrylonitrile resin, polyimide resin, polymethyl methacrylate resin, polycarbonate (PC) resin, polyethersulfone (PES) resin, polyamide resin, cycloolefin resin, polystyrene

[0184] resin, polyamideimide resin, polyvinyl chloride resin, etc. In particular, it is preferable to use a material with a low coefficient of thermal expansion. For example, polyamideimide resin, polyimide resin, PET, etc. with a coefficient of thermal expansion of 30×10 / K or less can be preferably used. In addition, a substrate (also referred to as a prepreg) in which a fibrous body is impregnated with a resin, or a substrate in which an inorganic filler is mixed with an organic resin to reduce the coefficient of thermal expansion can also be used. When the fibrous body is contained in the above materials, high-strength fibers of organic compounds or inorganic compounds are used for the fibrous body. Specifically, high-strength fibers refer to fibers with a high tensile elastic modulus or Young's modulus. Representative examples include polyvinyl alcohol-based fibers, polyester-based fibers, polyamide-based fibers, polyethylene-based fibers, aramid-based fibers, polyparaphenylene benzobisoxazole fibers, glass fibers, or carbon fibers. As glass fibers, E glass -6 is mentioned. In addition, a substrate (also referred to as a prepreg) in which a fibrous body is impregnated with a resin, or a substrate in which an inorganic filler is mixed with an organic resin to reduce the coefficient of thermal expansion can also be used. When the fibrous body is contained in the above materials, high-strength fibers of organic compounds or inorganic compounds are used for the fibrous body. Specifically, high-strength fibers refer to fibers with a high tensile elastic modulus or Young's modulus. Representative examples include polyvinyl alcohol-based fibers, polyester-based fibers, polyamide-based fibers, polyethylene-based fibers, aramid-based fibers, polyparaphenylene benzobisoxazole

[0185] fibers, glass fibers, or carbon fibers. As glass fibers, E glass fibers are mentioned. Specifically, high-strength fibers refer to fibers with a high tensile elastic modulus or Young's modulus. Representative examples include polyvinyl alcohol-based fibers, polyester-based fibers, polyamide-based fibers, polyethylene-based fibers, aramid-based fibers, polyparaphenylene benzobisoxazole fibers, glass fibers, or carbon fibers. As glass fibers, E glass fibers are mentioned. Examples of the glass fiber include those using E glass, S glass, D glass, Q glass, etc. These are used in the state of a woven fabric or a non-woven fabric, and a structure obtained by impregnating this fiber body with a resin and curing the resin may be used as a flexible substrate. When using a structure composed of a fiber body and a resin as a flexible substrate, the reliability against breakage due to bending or local pressing is improved, which is preferable .

[0186] Note that the display device according to one aspect of the present invention can use an active matrix method having an active element in a pixel, or a passive matrix method having no active element in a pixel.

[0187] In the active matrix method, as the active element (active element, non-linear element), not only a transistor but also various active elements (active elements, non-linear elements) can be used . For example, MIM (Metal Insulator Metal), or T FD (Thin Film Diode), etc. can also be used. Since these elements have fewer manufacturing steps, it is possible to reduce the manufacturing cost or improve the yield . Or, since these elements have a small element size, it is possible to improve the aperture ratio , and achieve low power consumption and high brightness.

[0188] As an alternative to the active matrix method, it is also possible to use a passive matrix type that does not use an active element (active element, non-linear element ). Since it does not use an active element (active element, non-linear element), and has fewer manufacturing steps, it is possible to reduce the manufacturing cost or improve the yield . Or, since it does not use an active element (active element, non-linear element), ​Since it does not exist, the aperture ratio can be improved, and low power consumption or high brightness can be achieved. This can be achieved.

[0189] This embodiment corresponds to a modification, addition, correction, deletion, application, generalization, or specialization of part or all of other embodiments. Therefore, part or all of this embodiment can be freely combined with, applied to, or replaced with part or all of other embodiments. This can be implemented.

[0190] (Embodiment 7) In this embodiment, the configuration of a touch panel applicable to an electronic device according to an aspect of the present invention will be described with reference to FIG. 27. Note that this touch panel may have a foldable configuration.

[0191] FIG. 27 is a cross-sectional view of the touch panel 500.

[0192] The touch panel 500 includes a display unit 501 and a touch sensor 595. The touch panel 500 also has a substrate 510, a substrate 570, and a substrate 590. Note that the substrate 510, the substrate 570, and the substrate 590 may all have flexibility.

[0193] The display unit 501 includes a substrate 510, a plurality of pixels on the substrate 510, and a plurality of wirings 511 capable of supplying signals to the pixels. The plurality of wirings 511 are routed to the outer peripheral portion of the substrate 510, and a part of them constitutes a terminal 519. The terminal 519 is electrically connected to the FPC 509 ( 1). This is electrically connected to the FPC 509(1).

[0194] <Touch Sensor> The substrate 590 has a touch sensor 595 and a plurality of is provided with wiring 598. A plurality of wirings 598 are routed along the outer peripheral portion of the substrate 590, and a part of them constitutes a terminal. And the terminal is electrically connected to the FPC 509(2).

[0195] As the touch sensor 595, for example, a capacitance type touch sensor can be applied. Capacitance types include surface capacitance type, projected capacitance type, etc.

[0196] In the case of the projected capacitance type, mainly due to the difference in the driving method, there are self - capacitance type and mutual - capacitance type etc. Using the mutual - capacitance type is preferable because simultaneous multi - point detection becomes possible.

[0197] Hereinafter, the case of applying a projected capacitance type touch sensor will be described.

[0198] In addition, various sensors that can detect the proximity or contact of a detection target such as a finger can be applied.

[0199] The projected capacitance type touch sensor 595 has electrodes 591 and 592. The electrode 591 is electrically connected to any one of the plurality of wirings 598, and the electrode 592 is electrically connected to any other one of the plurality of wirings 598.

[0200] The wiring 594 electrically connects two electrodes 591 sandwiching the electrode 592. At this time, a shape in which the area of the intersection portion of the electrode 592 and the wiring 594 is as small as possible is preferable. Thereby the area of the region where no electrode is provided can be reduced, and the unevenness of the transmittance can be reduced. As a result, the luminance unevenness of the light passing through the touch sensor 595 can be reduced.

[0201] Note that the shapes of the electrodes 591 and 592 can take various shapes. For example, a plurality of electrodes 5 Arrange 91 so that there are as few gaps as possible, and separate and provide a plurality of electrode 592s through an insulating layer in a region where they do not overlap with electrode 59 1. It may be configured in this way. At this time, if a dummy electrode that is electrically insulated from these is provided between two adjacent electrodes 592, it is preferable because the area of regions with different transmittance can be reduced.

[0202] The touch sensor 595 includes a substrate 590, electrodes 591 arranged in a staggered pattern on the substrate 590, electrodes 592, an insulating layer 593 covering the electrodes 591 and the electrodes 592, and wiring 594 that electrically connects adjacent electrodes 591.

[0203] The adhesive layer 597 bonds the substrate 590 to the substrate 570 so that the touch sensor 595 overlaps the display unit 501.

[0204] The electrodes 591 and 592 are formed using a conductive material having translucency. As the conductive material having translucency, conductive oxides such as indium oxide, indium tin oxide, indium zinc oxide, zinc oxide, zinc oxide added with gallium, or graphene can be used.

[0205] After forming a film of a conductive material having translucency on the substrate 590 by sputtering, unnecessary portions are removed by various patterning techniques such as photolithography to form the electrodes 59 1 and the electrodes 592. Graphene may be formed by reducing a solution in which graphene oxide is dispersed after coating it in addition to the CVD method.

[0206] In addition, as the material used for the insulating layer 593, for example, resins such as acrylic and epoxy, ​​​​​​In addition to the resin having a siloxane bond, inorganic insulating materials such as silicon oxide, silicon oxynitride, and aluminum oxide can also be used.

[0207] Further, an opening reaching the electrode 591 is provided in the insulating layer 593, and the wiring 594 electrically connects the adjacent electrode 591. Since the light-transmissive conductive material can increase the aperture ratio of the touch panel, it can be suitably used for the wiring 594. Also, a material having higher conductivity than the electrodes 591 and 59 2 can be suitably used for the wiring 594 because it can reduce the electrical resistance.

[0208] One electrode 592 extends in one direction, and a plurality of electrodes 592 are provided in a stripe shape.

[0209] The wiring 594 is provided so as to cross the electrode 592.

[0210] A pair of electrodes 591 are provided with one electrode 592 interposed therebetween, and the wiring 594 electrically connects the pair of electrodes 591

[0211] Note that the plurality of electrodes 591 do not necessarily need to be arranged in a direction orthogonal to one electrode 592, and may be arranged at an angle of less than 90 degrees.

[0212] One wiring 598 is electrically connected to the electrode 591 or the electrode 592. A part of the wiring 598 functions as a terminal. As the wiring 598, for example, metal materials such as aluminum, gold, platinum, silver nickel, titanium, tungsten, chromium, molybdenum, iron, cobalt, copper, or palladium and alloy materials containing the metal materials can be used.

[0213] ​​​​​​In addition, an insulating layer covering the insulating layer 593 and the wiring 594 is provided to protect the touch sensor 595. This can be done.

[0214] Also, the connection layer 599 electrically connects the wiring 598 and the FPC 509(2).

[0215] As the connection layer 599, an anisotropic conductive film (ACF: Anisotropic Co nductive Film), an anisotropic conductive paste (ACP: Anisotropi c Conductive Paste), etc. can be used.

[0216] The adhesive layer 597 has translucency. For example, a thermosetting resin or an ultraviolet curable resin can be used for this purpose, and specifically, resins such as acrylic, urethane, epoxy, or resins having a siloxane bond can be used.

[0217] <Display unit> The display unit 501 includes a plurality of pixels arranged in a matrix. Each pixel includes a pixel circuit that drives a display element and a display element.

[0218] In this embodiment, the case where a white organic electroluminescence element is applied as the display element will be described, but the display element is not limited to this. Different color organic electroluminescence elements, for example, a red organic electroluminescence element, a blue organic electroluminescence element, and a green organic electroluminescence element, may also be used.

[0219] For example, as the display element, in addition to the organic electroluminescence element, a display element that performs display by an electrophoretic method or an electro magnetic fluid method (also referred to as electronic ink), a shutter method Various display elements such as MEMS display elements and MEMS display elements of the optical interference method can be used. Note that a configuration suitable for the applicable display element can be selected and used from various pixel circuits. This can be done.

[0220] The substrate 510 is a laminate in which a flexible substrate 510b, a barrier film 510a that prevents diffusion of impurities into the light-emitting element, and an adhesive layer 510c that bonds the substrate 510b and the barrier film 510a are laminated.

[0221] The substrate 570 is a laminate of a flexible substrate 570b, a barrier film 570a that prevents diffusion of impurities into the light-emitting element, and an adhesive layer 570c that bonds the substrate 570b and the barrier film 570a.

[0222] The sealing material 560 bonds the substrate 570 and the substrate 510. The sealing material 560 has a refractive index larger than that of air. Further, when extracting light to the sealing material 560 side, the sealing material 560 also serves as an optical bonding layer. The pixel circuit and the light-emitting element (for example, the first light-emitting element 550R) are between the substrate 510 and the substrate 570.

[0223] 《Configuration of Pixel》 The pixel includes a sub-pixel 502R, and the sub-pixel 502R includes a light-emitting module 580R.

[0224] The sub-pixel 502R includes a pixel circuit including a first light-emitting element 550R and a transistor 502t that can supply power to the first light-emitting element 550R. Further, the light-emitting module 580R includes the first light-emitting element 550R and an optical element (for example, a coloring layer 567R).

[0225] The first light-emitting element 550R has a lower electrode, an upper electrode, and a light-emitting layer between the lower electrode and the upper electrode.​​​​​​​​​​​ It has a layer containing an organic compound.

[0226] The light-emitting module 580R has a first coloring layer 567R in the direction of extracting light. The coloring layer may be any layer that transmits light having a specific wavelength. For example, a layer that selectively transmits light presenting red, green, blue, etc. can be used. In other sub-pixels, a region that directly transmits the light emitted by the light-emitting element may be provided.

[0227] Also, when the sealing material 560 is provided on the light-extracting side, the sealing material 560 contacts the first light-emitting element 550R and the first coloring layer 567R.

[0228] The first coloring layer 567R is located at a position overlapping the first light-emitting element 550R. As a result, a part of the light emitted by the first light-emitting element 550R passes through the first coloring layer 567R and is emitted outside the light-emitting module 580R in the direction of the arrow shown in the figure.

[0229] 《Configuration of the display unit》 The display unit 501 has a light-shielding layer 567BM in the direction of emitting light. The light-shielding layer 567BM is provided so as to surround the coloring layer (for example, the first coloring layer 567R).

[0230] The display unit 501 includes an antireflection layer 567p at a position overlapping the pixel. As the antireflection layer 567 p, for example, a circular polarizing plate can be used.

[0231] The display unit 501 includes an insulating film 521. The insulating film 521 covers the transistor 502t . Note that the insulating film 521 can be used as a layer for flattening the unevenness caused by the pixel circuit. Also, a laminated film including a layer that can suppress the diffusion of impurities can be applied to the insulating film 521 . It can be used. As a result, the reliability of the transistor 502t and the like due to the diffusion of impurities can be suppressed. The decrease of

[0232] The display unit 501 has a light-emitting element (for example, the first light-emitting element 550R) on the insulating film 521. Yes.

[0233] The display unit 501 has a partition wall 528 that overlaps the end of the first lower electrode on the insulating film 521. Further, a spacer for controlling the distance between the substrate 510 and the substrate 570 is provided on the partition wall 528.

[0234] 《Configuration of the scanning line driving circuit》 The scanning line driving circuit 503g(1) includes a transistor 503t and a capacitor 503c. Note that the driving circuit can be formed on the same substrate in the same process as the pixel circuit.

[0235] 《Other configurations》 The display unit 501 includes a wiring 511 that can supply a signal, and a terminal 519 is provided on the wiring 5 11. Note that a signal such as an image signal and a synchronization signal can be supplied The FPC509(1) is electrically connected to the terminal 519.

[0236] Note that a printed wiring board (PWB) may be attached to the FPC509(1). Yes.

[0237] <Modification example 1 of the display unit> Various transistors can be applied to the display unit 501.

[0238] The configuration when applying a bottom-gate type transistor to the display unit 501 is shown in FIGS. 27(A) and 27(B).

[0239] For example, a semiconductor layer containing an oxide semiconductor, amorphous silicon, or the like is shown in FIG. 27(A). It can be applied to the transistor 502t and the transistor 503t shown.

[0240] For example, a semiconductor layer containing polycrystalline silicon or the like can be applied to the transistor 5 02t and the transistor 503t shown in FIG. 27(B).

[0241] The configuration when applying a top-gate type transistor to the display unit 501 is shown in FIG. 27(C) as shown.

[0242] For example, a semiconductor layer containing polycrystalline silicon or a transferred single-crystalline silicon film or the like can be applied to the transistor 502t and the transistor 503t shown in FIG. 2 7(C). It can be done.

[0243] This embodiment corresponds to a modification, addition, correction, deletion, application, generalization, or specialization of a part or all of other embodiments. Therefore, a part or all of this embodiment can be freely combined with, applied to, or replaced by a part or all of other embodiments.

[0244] (Embodiment 8) In this embodiment, the configuration of a touch panel applicable to an electronic device according to an aspect of the present invention will be described with reference to FIG. 28. Note that this touch panel may have a foldable configuration.

[0245] FIG. 28 is a cross-sectional view of the touch panel 500B.

[0246] The touch panel 500B described in this embodiment supplies the supplied image information to the transistor It includes a display unit 501 that is displayed on the side where it is provided, and the point that the touch sensor is provided on the base plate 510 side of the display unit is different from the touch panel 500 described in Embodiment 7. Here, different configurations will be described in detail, and for parts where the same configuration can be used, the above description will be incorporated by reference. The point that it is provided on the base plate 510 side of the display unit is different from the touch panel 500 described in Embodiment 7. Here, different configurations will be described in detail, and for parts where the same configuration can be used, the above description will be incorporated by reference.

[0247] <Display Unit> The display unit 501 includes a plurality of pixels arranged in a matrix. The pixel includes a display element and a pixel circuit that drives the display element.

[0248] 《Configuration of Pixel》 The pixel includes a sub-pixel 502R, and the sub-pixel 502R includes a light-emitting module 580R.

[0249] The sub-pixel 502R includes a pixel circuit including a first light-emitting element 550R and a transistor 502t that can supply power to the first light-emitting element 550R.

[0250] The light-emitting module 580R includes a first light-emitting element 550R and an optical element (for example, a coloring layer 567R).

[0251] The light-emitting element 550R has a lower electrode, an upper electrode, and a layer containing a light-emitting organic compound between the lower electrode and the upper electrode.

[0252] The light-emitting module 580R has a first coloring layer 567R in the direction of extracting light. The coloring layer may be one that transmits light having a specific wavelength, and for example, one that selectively transmits light exhibiting red, green, blue, etc. can be used. In addition, in other sub-pixels, a region that transmits the light emitted by the light-emitting element as it is may be provided. The coloring layer may be one that transmits light having a specific wavelength, and for example, one that selectively transmits light exhibiting red, green, blue, etc. can be used. A region that transmits the light emitted by the light-emitting element as it is may be provided.

[0253] The first colored layer 567R is located at a position overlapping the first light-emitting element 550R. Also, as shown in Fig. 28( A), the first light-emitting element 550R emits light toward the side where the transistor 502t is provided. As a result, a part of the light emitted by the light-emitting element 550R passes through the first colored layer 567R and is emitted outside the light-emitting module 580R in the direction of the arrow shown in the figure.

[0254] 《Configuration of the display unit》 The display unit 501 has a light-shielding layer 567BM in the direction of light emission. The light-shielding layer 567BM is provided so as to surround the colored layer (for example, the first colored layer 567R).

[0255] The display unit 501 includes an insulating film 521. The insulating film 521 covers the transistor 502t and can be used as a layer for flattening the unevenness caused by the pixel circuit. Also, a laminated film including a layer capable of suppressing the diffusion of impurities can be applied to the insulating film 521. Thereby, for example, a decrease in the reliability of the transistor 502t or the like due to impurities diffusing from the colored layer 567R can be suppressed.

[0256] <Touch sensor> The touch sensor 595 is provided on the substrate 510 side of the display unit 501 (see Fig. 28(A) for reference).

[0257] The adhesive layer 597 is between the substrate 510 and the substrate 590, and bonds the display unit 501 and the touch sensor 5 95 together.

[0258] <First modification example of the display unit> Various transistors can be applied to the display unit 501.

[0259] The configuration when applying a bottom-gate type transistor to the display unit 501 is shown in Fig. 28(A)​ and shown in FIG. 28(B).

[0260] For example, a semiconductor layer containing an oxide semiconductor, amorphous silicon, etc. can be applied to the transistors 502t and 503t shown in FIG. 28(A).

[0261] For example, a semiconductor layer containing polycrystalline silicon, etc. can be applied to the transistors 5 02t and 503t shown in FIG. 28(B).

[0262] The configuration when applying a top-gate type transistor to the display unit 501 is shown in FIG. 28(C).

[0263] For example, a semiconductor layer containing polycrystalline silicon or a transferred single crystal silicon film, etc. can be applied to the transistors 502t and 503t shown in FIG. 2 8(C).

[0264] This embodiment corresponds to a modification, addition, correction, deletion, application, generalization, or specialization of part or all of other embodiments. Therefore, part or all of this embodiment can be freely combined with, applied to, or replaced with part or all of other embodiments and implemented.

[0265] (Embodiment 9) In this embodiment, an oxide semiconductor that can be preferably used for the semiconductor layer of a semiconductor device applicable to a display panel according to one aspect of the present invention will be described.

[0266] The oxide semiconductor has a large energy gap of 3.0 eV or more, and when the oxide semiconductor is appropriately ​​​​​​An oxide semiconductor film obtained by processing under specific conditions and sufficiently reducing its carrier density is applied In the transistor thus obtained, the leakage current (off-current) between the source and the drain in the off state can be made extremely low as compared with a conventional silicon-based transistor .

[0267] As an applicable oxide semiconductor, it is preferably contains at least indium (In) or zinc (Zn ). Particularly preferably, it contains In and Zn. Further, as a stabilizer for reducing the variation in the electrical characteristics of a transistor using the oxide semiconductor , in addition to these , gallium (Ga), tin (Sn), hafnium (Hf), zirconium (Zr) , titanium (Ti), scandium (Sc), yttrium (Y), lanthanoids (for example , cerium (Ce), neodymium (Nd), gadolinium (Gd)) are preferably contained, alone or in combination of two or more kinds

[0268] For example, as the oxide semiconductor, indium oxide, tin oxide, zinc oxide, In-Zn-based oxide , Sn-Zn-based oxide, Al-Zn-based oxide, Zn-Mg-based oxide, Sn-Mg-based oxide , In-Mg-based oxide, In-Ga-based oxide, In-Ga-Zn-based oxide (also denoted as IGZO ), In-Al-Zn-based oxide, In-Sn-Zn-based oxide, Sn-Ga- Zn-based oxide, Al-Ga-Zn-based oxide, Sn-Al-Zn-based oxide, In-Hf-Z n-based oxide, In-Zr-Zn-based oxide, In-Ti-Zn-based oxide, In-Sc-Zn -based oxide, In-Y-Zn-based oxide, In-La-Zn-based oxide, In-Ce-Zn-based oxide , In-Pr-Zn-based oxide, In-Nd-Zn-based oxide, In-Sm-Zn-based oxide Substances, In-Eu-Zn-based oxides, In-Gd-Zn-based oxides, In-Tb-Zn-based oxides , In-Dy-Zn-based oxides, In-Ho-Zn-based oxides, In-Er-Zn-based oxides, In-Tm-Zn-based oxides, In-Yb-Zn-based oxides, In-Lu-Zn-based oxides, I n-Sn-Ga-Zn-based oxides, In-Hf-Ga-Zn-based oxides, In-Al-Ga- Zn-based oxides, In-Sn-Al-Zn-based oxides, In-Sn-Hf-Zn-based oxides, I n-Hf-Al-Zn-based oxides can be used.

[0269] Here, the In-Ga-Zn-based oxide means an oxide having In, Ga, and Zn as main components, and the ratio of In, Ga, and Zn is not limited. Also, metal elements other than In, Ga, and Zn may be contained.

[0270] Further, as the oxide semiconductor, InMO3(ZnO) m (m > 0 and m is not an integer ) may be used. Here, M represents one metal element or a plurality of metal elements selected from Ga, Fe, Mn, and Co, or the elements as the above stabilizer . Also, as the oxide semiconductor, In2SnO5(ZnO) (n > 0 and n is an integer) n may be used.

[0271] For example, In-Ga-Zn-based oxides with an atomic ratio of In:Ga:Zn = 1:1:1, In:Ga:Zn = 1:3:2, In:Ga :Zn = 1:3:4, In:Ga:Zn = 1:3:6, In:Ga:Zn = 3:1:2 or In:Ga:Zn = 2:1:3, and oxides in the vicinity of their compositions may be used.

[0272] When a large amount of hydrogen is contained in the oxide semiconductor film, by combining with the oxide semiconductor, a part of the hydrogen becomes a donor and generates electrons as carriers. As a result, the threshold voltage of the transistor shifts in the negative direction. Therefore, after the formation of the oxide semiconductor film, it is preferable to perform a dehydration treatment (dehydrogenation treatment) to remove hydrogen or moisture from the oxide semiconductor film and purify it to a high purity so that impurities are contained as little as possible. Note that when the oxide semiconductor film is dehydrated (dehydrogenated), oxygen may also decrease simultaneously from the oxide semiconductor film. As described above, after the formation of the oxide semiconductor film, a dehydration treatment (dehydrogenation treatment) is performed to remove hydrogen or moisture from the oxide semiconductor film and purify it to a high purity so that impurities are contained as little as possible, and a treatment of adding oxygen to compensate for the oxygen deficiency increased by the dehydration treatment (dehydrogenation treatment) is preferably performed. In addition, in this specification, etc., the case of supplying oxygen to the oxide semiconductor film may be referred to as an oxygen addition treatment, or the case of making the oxygen contained in the oxide semiconductor film more than the stoichiometric composition may be referred to as a peroxide treatment. In this way, the oxide semiconductor film can be made into an oxide semiconductor film that is i-type (intrinsic) or substantially i-type (intrinsic) approaching i-type infinitely by removing hydrogen or moisture by dehydration treatment (dehydrogenation treatment) and compensating for the oxygen deficiency by oxygen addition treatment. Note that substantially intrinsic means that carriers derived from donors in the oxide semiconductor film are extremely few (close to zero), and the carrier density is 1×10

[0273] / cm or less, 1×10 / cm

[0274] 17 3 16 3 (close to zero), and the carrier density is 1×10 17 / cm 3 or less, 1×10 16 / cm 3 17 / cm 3The following 、 1×10 15 / cm 3 or less, 1×10 14 / cm 3 or less, 1×10 13 / cm 3 or less, Particularly preferably 8×10 11 / cm 3 less, more preferably 1×10 11 / cm 3 less , more preferably 1×10 10 / cm 3 less, and 1×10 -9 / cm 3 or more is meant.

[0275] Also, in this way, a transistor including an oxide semiconductor film of type i or substantially type i can achieve extremely excellent off-current characteristics. For example, for a transistor using an oxide semiconductor film when it is in the off state, the drain current can be 1×10 -18 A or less at room temperature (about 25°C), preferably 1×10 -21 A or less, more preferably 1×10 -24 A or less, or 1×10 A or less at 85 -15 °C, preferably 1×10 -18 A or less, more preferably 1× 10 -21 A or less. Note that the off state of the transistor means that, in the case of an n-channel type transistor, the gate voltage is in a state sufficiently smaller than the threshold voltage. Specifically if the gate voltage is 1 V or more, 2 V or more, or 3 V or more smaller than the threshold voltage , the transistor is in the off state. Note that these current values are for the case where the voltage between the source and the drain is, for example, 1 V, 5 V, or 10 V.

[0276] Hereinafter, the structure of the oxide semiconductor film will be described.

[0277] The oxide semiconductor film is roughly classified into a non-single crystal oxide semiconductor film and a single crystal oxide semiconductor film. The non-single crystal oxide semiconductor film refers to a CAAC-OS (C Axis Aligned Crystalline Oxide Semiconductor) film, a polycrystalline oxide semiconductor film, a microcrystalline oxide semiconductor film, an amorphous oxide semiconductor film, and the like. film, a polycrystalline oxide semiconductor film, a microcrystalline oxide semiconductor film, an amorphous oxide semiconductor film, and the like.

[0278] First, the CAAC-OS film will be described. Note that CAAC-OS can also be called an oxide semiconductor having CANC (C-Axis Aligned nanocrystals). -Axis Aligned nanocrystals) can also be called an oxide semiconductor having CANC (C-Axis Aligned nanocrystals). This can also be called an oxide semiconductor having CANC (C-Axis Aligned nanocrystals).

[0279] The CAAC-OS film is one of the oxide semiconductor films having a plurality of c-axis oriented crystal parts. .

[0280] When the CAAC-OS film is observed by a transmission electron microscope (TEM: Transmission Electron Microscope), it is not possible to confirm a clear boundary between crystal parts, that is, a grain boundary (also referred to as a grain boundary). Therefore, it can be said that the CAAC-OS film is less likely to cause a decrease in electron mobility due to grain boundaries. a grain boundary (also referred to as a grain boundary). Therefore, it can be said that the CAAC-OS film is less likely to cause a decrease in electron mobility due to grain boundaries. a grain boundary (also referred to as a grain boundary). Therefore, it can be said that the CAAC-OS film is less likely to cause a decrease in electron mobility due to grain boundaries.

[0281] When the CAAC-OS film is observed by TEM from a direction substantially parallel to the sample surface (cross-sectional TEM observation), it can be confirmed that metal atoms are arranged in layers in the crystal part. Metal atoms When the CAAC-OS film is observed by TEM from a direction substantially parallel to the sample surface (cross-sectional TEM observation), it can be confirmed that metal atoms are arranged in layers in the crystal part. Metal atoms Each layer of atoms has a shape that reflects the unevenness of the surface (also referred to as the formed surface) or the upper surface of the CAAC-OS film, and is arranged parallel to the formed surface or the upper surface of the CAAC-OS film. Each layer of atoms has a shape that reflects the unevenness of the surface (also referred to as the formed surface) or the upper surface of the CAAC-OS film, and is arranged parallel to the formed surface or the upper surface of the CAAC-OS film.

[0282] On the one hand, when the CAAC-OS film is observed by TEM from a direction substantially perpendicular to the sample surface (planar TEM observation), it can be confirmed that in the crystal part, metal atoms are arranged in a triangular or hexagonal shape. However, no regularity is found in the arrangement of metal atoms between different crystal parts.

[0283] Figure 29(a) is a cross-sectional TEM image of the CAAC-OS film. Figure 29(b) is a further magnified cross-sectional TEM image of Figure 29(a), and the atomic arrangement is emphasized for easy understanding.

[0284] Figure 29(c) is a local Fourier transform image of the region (diameter about 4 nm) surrounded by a circle between A-O-A' in Figure 29(a). From Figure 29(c), c-axis orientation can be confirmed in each region. Also, since the direction of the c-axis is different between A-O and O-A', it is suggested that they are different grains. Also, it can be seen that between A-O, the angle of the c-axis changes continuously little by little, such as 14.3°, 16. 6°, 26.4°. Similarly, between O-A ', it can be seen that the angle of the c-axis changes continuously little by little, such as -18.3°, -17.6°, -15.9°.

[0285] When electron diffraction is performed on the CAAC-OS film, spots (bright spots) indicating orientation are observed. For example, when electron diffraction (also called nano-beam electron diffraction) using an electron beam of, for example, 1 nm or more and 30 nm or less is performed on the upper surface of the CAAC-OS film, spots are observed (see Figure 30(A)).

[0286] From cross-sectional TEM observation and planar TEM observation, it can be seen that the crystal part of the CAAC-OS film has orientation. ​​​​​

[0287] Most of the crystal parts contained in the CAAC-OS film are cubes with a side length of less than 100 nm. The size is such that it fits within the body. Therefore, the crystal parts contained in the CAAC-OS film also include cases where the size fits within a cube with a side length of less than 10 nm, less than 5 nm, or less than 3 nm. However, when a plurality of crystal parts contained in the CAAC-OS film are connected, a large crystal region may be formed. For example, in a planar TEM image, crystal regions of 2500 nm or more, 5 μm or more, or 1000 μm or more may be observed. When structural analysis is performed on the CAAC-OS film using an X-ray diffraction (XRD) apparatus, for example, in the out-of-plane method analysis of the CAAC-OS film having InGaZnO4 crystals, a peak may appear near a diffraction angle (2θ) of 31°. Since this peak is attributed to the (009) plane of the InGaZnO4 crystals, it can be confirmed that the crystals of the CAAC-OS film have c-axis orientation and the c-axis is oriented in a direction approximately perpendicular to the formed surface or the upper surface. 2 5 μm 2 1000 μm 2 or more may be observed.

[0288] On the other hand, in the in-plane method analysis in which X-rays are incident on the CAAC-OS film from a direction approximately perpendicular to the c-axis, a peak may appear near 2θ of 56°. This peak is attributed to the (110) plane of the InGaZnO4 crystals. If it is a single crystal oxide semiconductor film of InGaZnO4, when analysis (φ scan) is performed while rotating the sample with the normal vector of the sample surface as the axis (φ axis) with 2θ fixed near 56°, crystal planes equivalent to the (110) plane can be confirmed.

[0289] In contrast, in the case of the CAAC-OS film, six peaks are observed, which are assigned to 2θ. Even when the φ is fixed at around 56° and scanned, no clear peak appears.

[0290] From the above, it can be concluded that the orientation of the a-axis and b-axis is uniform between different crystal regions in the CAAC-OS film. Although it is irregular, it has a c-axis orientation, and the c-axis is parallel to the normal vector of the surface on which it is formed or the upper surface. Therefore, the layered structure confirmed by the cross-sectional TEM observation mentioned above is consistent with the Each layer of arranged metal atoms is a plane parallel to the ab plane of the crystal.

[0291] The crystalline part is formed when the CAAC-OS film is formed or after a crystallization treatment such as a heat treatment. As described above, the c-axis of the crystal is aligned with the surface on which the CAAC-OS film is to be formed. Therefore, for example, in the CAAC-OS film, When the shape is changed by etching, the c-axis of the crystal is aligned with the CAAC-OS film. It may not be parallel to the normal vector of the face or top surface.

[0292] Furthermore, the distribution of c-axis oriented crystals in the CAAC-OS film does not need to be uniform. For example, the crystalline part of the CAAC-OS film is grown from the top surface of the CAAC-OS film. Therefore, when the crystal is formed, the region near the top surface has a crystal orientation that is more c-axis oriented than the region near the surface on which the crystal is formed. In addition, the CAAC-OS film containing impurities may have a high percentage of impurities. The region where the ZnO was added was transformed, and regions with different proportions of c-axis oriented crystals were formed. This may also occur.

[0293] In addition, the out-of-plane structure of the CAAC-OS film with InGaZnO4 crystals In the analysis by X-ray diffraction, in addition to the peak at around 2θ = 31°, a peak may also appear at around 2θ = 36°. The peak at around 2θ = 36° indicates that a part of the CAAC-OS film contains crystals that do not have c-axis orientation. The CAAC-OS film preferably shows a peak at around 2θ = 31° and does not show a peak at around 2θ = 36°. The CAAC-OS film is an oxide semiconductor film with a low impurity concentration. Impurities are elements other than the main components of the oxide semiconductor film, such as hydrogen, carbon, silicon, and transition metal elements. In particular, elements such as silicon, which have a stronger binding force with oxygen than the metal elements constituting the oxide semiconductor film, can disrupt the atomic arrangement of the oxide semiconductor film by taking oxygen from the oxide semiconductor film, leading to a decrease in crystallinity. Also, heavy metals such as iron and nickel, argon, carbon dioxide, etc., have a large atomic radius (or molecular radius), and when contained inside the oxide semiconductor film, they can disrupt the atomic arrangement of the oxide semiconductor film and cause a decrease in crystallinity. Note that impurities contained in the oxide semiconductor film may serve as carrier traps or carrier generation sources. The CAAC-OS film is an oxide semiconductor film with a low impurity concentration. Impurities are elements other than the main components of the oxide semiconductor film, such as hydrogen, carbon, silicon, and transition metal elements. In particular, elements such as silicon, which have a stronger binding force with oxygen than the metal elements constituting the oxide semiconductor film, can disrupt the atomic arrangement of the oxide semiconductor film by taking oxygen from the oxide semiconductor film, leading to a decrease in crystallinity. Also, heavy metals such as iron and nickel, argon, carbon dioxide, etc., have a large atomic radius (or molecular radius), and when contained inside the oxide semiconductor film, they can disrupt the atomic arrangement of the oxide semiconductor film and cause a decrease in crystallinity. Note that impurities contained in the oxide semiconductor film may serve as carrier traps or carrier generation sources. The CAAC-OS film preferably shows a peak at around 2θ = 31° and does not show a peak at around 2θ = 36°.

[0294] The CAAC-OS film is an oxide semiconductor film with a low impurity concentration. Impurities are elements other than the main components of the oxide semiconductor film, such as hydrogen, carbon, silicon, and transition metal elements. In particular, elements such as silicon, which have a stronger binding force with oxygen than the metal elements constituting the oxide semiconductor film, can disrupt the atomic arrangement of the oxide semiconductor film by taking oxygen from the oxide semiconductor film, leading to a decrease in crystallinity. Also, heavy metals such as iron and nickel, argon, carbon dioxide, etc., have a large atomic radius (or molecular radius), and when contained inside the oxide semiconductor film, they can disrupt the atomic arrangement of the oxide semiconductor film and cause a decrease in crystallinity. Note that impurities contained in the oxide semiconductor film may serve as carrier traps or carrier generation sources. The CAAC-OS film is an oxide semiconductor film with a low impurity concentration. Impurities are elements other than the main components of the oxide semiconductor film, such as hydrogen, carbon, silicon, and transition metal elements. In particular, elements such as silicon, which have a stronger binding force with oxygen than the metal elements constituting the oxide semiconductor film, can disrupt the atomic arrangement of the oxide semiconductor film by taking oxygen from the oxide semiconductor film, leading to a decrease in crystallinity. Also, heavy metals such as iron and nickel, argon, carbon dioxide, etc., have a large atomic radius (or molecular radius), and when contained inside the oxide semiconductor film, they can disrupt the atomic arrangement of the oxide semiconductor film and cause a decrease in crystallinity. Note that impurities contained in the oxide semiconductor film may serve as carrier traps or carrier generation sources. The CAAC-OS film is an oxide semiconductor film with a low impurity concentration. Impurities are elements other than the main components of the oxide semiconductor film, such as hydrogen, carbon, silicon, and transition metal elements. In particular, elements such as silicon, which have a stronger binding force with oxygen than the metal elements constituting the oxide semiconductor film, can disrupt the atomic arrangement of the oxide semiconductor film by taking oxygen from the oxide semiconductor film, leading to a decrease in crystallinity. Also, heavy metals such as iron and nickel, argon, carbon dioxide, etc., have a large atomic radius (or molecular radius), and when contained inside the oxide semiconductor film, they can disrupt the atomic arrangement of the oxide semiconductor film and cause a decrease in crystallinity. Note that impurities contained in the oxide semiconductor film may serve as carrier traps or carrier generation sources. The CAAC-OS film is an oxide semiconductor film with a low impurity concentration. Impurities are elements other than the main components of the oxide semiconductor film, such as hydrogen, carbon, silicon, and transition metal elements. In particular, elements such as silicon, which have a stronger binding force with oxygen than the metal elements constituting the oxide semiconductor film, can disrupt the atomic arrangement of the oxide semiconductor film by taking oxygen from the oxide semiconductor film, leading to a decrease in crystallinity. Also, heavy metals such as iron and nickel, argon, carbon dioxide, etc., have a large atomic radius (or molecular radius), and when contained inside the oxide semiconductor film, they can disrupt the atomic arrangement of the oxide semiconductor film and cause a decrease in crystallinity. Note that impurities contained in the oxide semiconductor film may serve as carrier traps or carrier generation sources. The CAAC-OS film is an oxide semiconductor film with a low impurity concentration. Impurities are elements other than the main components of the oxide semiconductor film, such as hydrogen, carbon, silicon, and transition metal elements. In particular, elements such as silicon, which have a stronger binding force with oxygen than the metal elements constituting the oxide semiconductor film, can disrupt the atomic arrangement of the oxide semiconductor film by taking oxygen from the oxide semiconductor film, leading to a decrease in crystallinity. Also, heavy metals such as iron and nickel, argon, carbon dioxide, etc., have a large atomic radius (or molecular radius), and when contained inside the oxide semiconductor film, they can disrupt the atomic arrangement of the oxide semiconductor film and cause a decrease in crystallinity. Note that impurities contained in the oxide semiconductor film may serve as carrier traps or carrier generation sources. The CAAC-OS film is an oxide semiconductor film with a low impurity concentration. Impurities are elements other than the main components of the oxide semiconductor film, such as hydrogen, carbon, silicon, and transition metal elements. In particular, elements such as silicon, which have a stronger binding force with oxygen than the metal elements constituting the oxide semiconductor film, can disrupt the atomic arrangement of the oxide semiconductor film by taking oxygen from the oxide semiconductor film, leading to a decrease in crystallinity. Also, heavy metals such as iron and nickel, argon, carbon dioxide, etc., have a large atomic radius (or molecular radius), and when contained inside the oxide semiconductor film, they can disrupt the atomic arrangement of the oxide semiconductor film and cause a decrease in crystallinity. Note that impurities contained in the oxide semiconductor film may serve as carrier traps or carrier generation sources. The CAAC-OS film is an oxide semiconductor film with a low impurity concentration. Impurities are elements other than the main components of the oxide semiconductor film, such as hydrogen, carbon, silicon, and transition metal elements. In particular, elements such as silicon, which have a stronger binding force with oxygen than the metal elements constituting the oxide semiconductor film, can disrupt the atomic arrangement of the oxide semiconductor film by taking oxygen from the oxide semiconductor film, leading to a decrease in crystallinity. Also, heavy metals such as iron and nickel, argon, carbon dioxide, etc., have a large atomic radius (or molecular radius), and when contained inside the oxide semiconductor film, they can disrupt the atomic arrangement of the oxide semiconductor film and cause a decrease in crystallinity. Note that impurities contained in the oxide semiconductor film may serve as carrier traps or carrier generation sources. The CAAC-OS film is an oxide semiconductor film with a low impurity concentration. Impurities are elements other than the main components of the oxide semiconductor film, such as hydrogen, carbon, silicon, and transition metal elements. In particular, elements such as silicon, which have a stronger binding force with oxygen than the metal elements constituting the oxide semiconductor film, can disrupt the atomic arrangement of the oxide semiconductor film by taking oxygen from the oxide semiconductor film, leading to a decrease in crystallinity. Also, heavy metals such as iron and nickel, argon, carbon dioxide, etc., have a large atomic radius (or molecular radius), and when contained inside the oxide semiconductor film, they can disrupt the atomic arrangement of the oxide semiconductor film and cause a decrease in crystallinity. Note that impurities contained in the oxide semiconductor film may serve as carrier traps or carrier generation sources.

[0295] The CAAC-OS film is an oxide semiconductor film with a low defect level density. For example, oxygen vacancies in the oxide semiconductor film can serve as carrier traps or can become carrier generation sources by capturing hydrogen. The CAAC-OS film is an oxide semiconductor film with a low defect level density. For example, oxygen vacancies in the oxide semiconductor film can serve as carrier traps or can become carrier generation sources by capturing hydrogen. The CAAC-OS film is an oxide semiconductor film with a low defect level density. For example, oxygen vacancies in the oxide semiconductor film can serve as carrier traps or can become carrier generation sources by capturing hydrogen.

[0296] The fact that the impurity concentration is low and the defect level density is low (few oxygen vacancies) is called high-purity intrinsic or substantially high-purity intrinsic. An oxide semiconductor film that is high-purity intrinsic or substantially high-purity intrinsic has few carrier generation sources, so the carrier density can be lowered. Therefore, The fact that the impurity concentration is low and the defect level density is low (few oxygen vacancies) is called high-purity intrinsic or substantially high-purity intrinsic. An oxide semiconductor film that is high-purity intrinsic or substantially high-purity intrinsic has few carrier generation sources, so the carrier density can be lowered. Therefore, The fact that the impurity concentration is low and the defect level density is low (few oxygen vacancies) is called high-purity intrinsic or substantially high-purity intrinsic. An oxide semiconductor film that is high-purity intrinsic or substantially high-purity intrinsic has few carrier generation sources, so the carrier density can be lowered. Therefore, A transistor using the oxide semiconductor film rarely has electrical characteristics (also referred to as negative threshold voltage) with a negative threshold voltage. Also, an oxide semiconductor film that is highly pure intrinsic or substantially highly pure intrinsic has few carrier traps. Therefore, a transistor using the oxide semiconductor film has small fluctuations in electrical characteristics and becomes a highly reliable transistor. Note that the charge trapped in the carrier traps of the oxide semiconductor film takes a long time to be released and may behave like a fixed charge. Therefore, a transistor using an oxide semiconductor film with a high impurity concentration and a high defect level density may have unstable electrical characteristics. - Mary on. Further, an oxide semiconductor film that is highly pure intrinsic or substantially highly pure intrinsic has few carrier traps. Therefore, a transistor using the oxide semiconductor film has small fluctuations in electrical characteristics and becomes a highly reliable transistor. Note that the charge trapped in the carrier traps of the oxide semiconductor film takes a long time to be released and may behave like a fixed charge. Therefore, a transistor using an oxide semiconductor film with a high impurity concentration and a high defect level density may have unstable electrical characteristics. Further, an oxide semiconductor film that is highly pure intrinsic or substantially highly pure intrinsic has few carrier traps. Therefore, a transistor using the oxide semiconductor film has small fluctuations in electrical characteristics and becomes a highly reliable transistor. Note that the charge trapped in the carrier traps of the oxide semiconductor film takes a long time to be released and may behave like a fixed charge. Therefore, a transistor using an oxide semiconductor film with a high impurity concentration and a high defect level density may have unstable electrical characteristics. Further, an oxide semiconductor film that is highly pure intrinsic or substantially highly pure intrinsic has few carrier traps. Therefore, a transistor using the oxide semiconductor film has small fluctuations in electrical characteristics and becomes a highly reliable transistor. Note that the charge trapped in the carrier traps of the oxide semiconductor film takes a long time to be released and may behave like a fixed charge. Therefore, a transistor using an oxide semiconductor film with a high impurity concentration and a high defect level density may have unstable electrical characteristics. Further, an oxide semiconductor film that is highly pure intrinsic or substantially highly pure intrinsic has few carrier traps. Therefore, a transistor using the oxide semiconductor film has small fluctuations in electrical characteristics and becomes a highly reliable transistor. Note that the charge trapped in the carrier traps of the oxide semiconductor film takes a long time to be released and may behave like a fixed charge. Therefore, a transistor using an oxide semiconductor film with a high impurity concentration and a high defect level density may have unstable electrical characteristics. Further, an oxide semiconductor film that is highly pure intrinsic or substantially highly pure intrinsic has few carrier traps. Therefore, a transistor using the oxide semiconductor film has small fluctuations in electrical characteristics and becomes a highly reliable transistor. Note that the charge trapped in the carrier traps of the oxide semiconductor film takes a long time to be released and may behave like a fixed charge. Therefore, a transistor using an oxide semiconductor film with a high impurity concentration and a high defect level density may have unstable electrical characteristics. Further, an oxide semiconductor film that is highly pure intrinsic or substantially highly pure intrinsic has few carrier traps. Therefore, a transistor using the oxide semiconductor film has small fluctuations in electrical characteristics and becomes a highly reliable transistor. Note that the charge trapped in the carrier traps of the oxide semiconductor film takes a long time to be released and may behave like a fixed charge. Therefore, a transistor using an oxide semiconductor film with a high impurity concentration and a high defect level density may have unstable electrical characteristics.

[0297] Also, a transistor using a CAAC-OS film has small fluctuations in electrical characteristics due to irradiation with visible light or ultraviolet light. Also, a transistor using a CAAC-OS film has small fluctuations in electrical characteristics due to irradiation with visible light or ultraviolet light.

[0298] Next, the microcrystalline oxide semiconductor film will be described.

[0299] In the observation image by TEM, it may not be possible to clearly confirm the crystal part in the microcrystalline oxide semiconductor film. The crystal part contained in the microcrystalline oxide semiconductor film often has a size of 1 nm or more and 100 nm or less, or 1 nm or more and 10 nm or less. In particular, an oxide semiconductor film having nanocrystals (nc: nanocrystalline) that are microcrystals of 1 nm or more and 10 nm or less, or 1 nm or more and 3 nm or less, is called an nc-OS (nanocrystalline Oxide Semiconductor) film. Also, in the observation image by TEM, for example, it may not be possible to clearly confirm the grain boundaries of the nc-OS film. Note that nc-OS, having RANC (Random Aligned nanocrystals) In the observation image by TEM, it may not be possible to clearly confirm the crystal part in the microcrystalline oxide semiconductor film. The crystal part contained in the microcrystalline oxide semiconductor film often has a size of 1 nm or more and 100 nm or less, or 1 nm or more and 10 nm or less. In particular, an oxide semiconductor film having nanocrystals (nc: nanocrystalline) that are microcrystals of 1 nm or more and 10 nm or less, or 1 nm or more and 3 nm or less, is called an nc-OS (nanocrystalline Oxide Semiconductor) film. Also, in the observation image by TEM, for example, it may not be possible to clearly confirm the grain boundaries of the nc-OS film. Note that nc-OS, having RANC (Random Aligned nanocrystals) In the observation image by TEM, it may not be possible to clearly confirm the crystal part in the microcrystalline oxide semiconductor film. The crystal part contained in the microcrystalline oxide semiconductor film often has a size of 1 nm or more and 100 nm or less, or 1 nm or more and 10 nm or less. In particular, an oxide semiconductor film having nanocrystals (nc: nanocrystalline) that are microcrystals of 1 nm or more and 10 nm or less, or 1 nm or more and 3 nm or less, is called an nc-OS (nanocrystalline Oxide Semiconductor) film. Also, in the observation image by TEM, for example, it may not be possible to clearly confirm the grain boundaries of the nc-OS film. Note that nc-OS, having RANC (Random Aligned nanocrystals) In the observation image by TEM, it may not be possible to clearly confirm the crystal part in the microcrystalline oxide semiconductor film. The crystal part contained in the microcrystalline oxide semiconductor film often has a size of 1 nm or more and 100 nm or less, or 1 nm or more and 10 nm or less. In particular, an oxide semiconductor film having nanocrystals (nc: nanocrystalline) that are microcrystals of 1 nm or more and 10 nm or less, or 1 nm or more and 3 nm or less, is called an nc-OS (nanocrystalline Oxide Semiconductor) film. Also, in the observation image by TEM, for example, it may not be possible to clearly confirm the grain boundaries of the nc-OS film. Note that nc-OS, having RANC (Random Aligned nanocrystals) In the observation image by TEM, it may not be possible to clearly confirm the crystal part in the microcrystalline oxide semiconductor film. The crystal part contained in the microcrystalline oxide semiconductor film often has a size of 1 nm or more and 100 nm or less, or 1 nm or more and 10 nm or less. In particular, an oxide semiconductor film having nanocrystals (nc: nanocrystalline) that are microcrystals of 1 nm or more and 10 nm or less, or 1 nm or more and 3 nm or less, is called an nc-OS (nanocrystalline Oxide Semiconductor) film. Also, in the observation image by TEM, for example, it may not be possible to clearly confirm the grain boundaries of the nc-OS film. Note that nc-OS, having RANC (Random Aligned nanocrystals) In the observation image by TEM, it may not be possible to clearly confirm the crystal part in the microcrystalline oxide semiconductor film. The crystal part contained in the microcrystalline oxide semiconductor film often has a size of 1 nm or more and 100 nm or less, or 1 nm or more and 10 nm or less. In particular, an oxide semiconductor film having nanocrystals (nc: nanocrystalline) that are microcrystals of 1 nm or more and 10 nm or less, or 1 nm or more and 3 nm or less, is called an nc-OS (nanocrystalline Oxide Semiconductor) film. Also, in the observation image by TEM, for example, it may not be possible to clearly confirm the grain boundaries of the nc-OS film. Note that nc-OS, having RANC (Random Aligned nanocrystals) In the observation image by TEM, it may not be possible to clearly confirm the crystal part in the microcrystalline oxide semiconductor film. The crystal part contained in the microcrystalline oxide semiconductor film often has a size of 1 nm or more and 100 nm or less, or 1 nm or more and 10 nm or less. In particular, an oxide semiconductor film having nanocrystals (nc: nanocrystalline) that are microcrystals of 1 nm or more and 10 nm or less, or 1 nm or more and 3 nm or less, is called an nc-OS (nanocrystalline Oxide Semiconductor) film. Also, in the observation image by TEM, for example, it may not be possible to clearly confirm the grain boundaries of the nc-OS film. Note that nc-OS, having RANC (Random Aligned nanocrystals) In the observation image by TEM, it may not be possible to clearly confirm the crystal part in the microcrystalline oxide semiconductor film. The crystal part contained in the microcrystalline oxide semiconductor film often has a size of 1 nm or more and 100 nm or less, or 1 nm or more and 10 nm or less. In particular, an oxide semiconductor film having nanocrystals (nc: nanocrystalline) that are microcrystals of 1 nm or more and 10 nm or less, or 1 nm or more and 3 nm or less, is called an nc-OS (nanocrystalline Oxide Semiconductor) film. Also, in the observation image by TEM, for example, it may not be possible to clearly confirm the grain boundaries of the nc-OS film. Note that nc-OS, having RANC (Random Aligned nanocrystals) A semiconductor, or an oxide semiconductor having NANC (Non - Aligned nanocrystals), can also be called as such. It can also be called an oxide semiconductor having

[0300] The nc - OS film has periodicity in the atomic arrangement in a minute region (for example, a region of 1 nm or more and 10 nm or less, particularly a region of 1 nm or more and 3 nm or less). Also, the nc - OS film has no regularity in the crystal orientation between different crystal parts. Therefore, there is no orientation in the whole film. Therefore, depending on the analysis method, the nc - OS film may not be distinguishable from an amorphous oxide semiconductor film. For example, when performing structural analysis on the nc - OS film using an XRD apparatus that uses X - rays with a diameter larger than that of the crystal part, in the analysis by the out - of - plane method, no peak indicating the crystal plane is detected. Also, when performing electron diffraction (also called limited - field electron diffraction) on the nc - OS film using an electron beam with a probe diameter larger than that of the crystal part (for example, 50 nm or more), a diffraction pattern such as a halo pattern is observed. On the other hand, when performing nano - beam electron diffraction on the nc - OS film using an electron beam with a probe diameter close to or smaller than the size of the crystal part, spots are observed. Also, when performing nano - beam electron diffraction on the nc - OS film, a region with high brightness may be observed as if drawing a circle (ring - shaped). Also, when performing nano - beam electron diffraction on the nc - OS film, a plurality of spots may be observed within the ring - shaped region (see Fig. 30(B)). Therefore, the nc - OS film is an oxide semiconductor film with higher regularity than an amorphous oxide semiconductor film. Therefore, the nc - OS film has a lower density of defect levels than an amorphous oxide semiconductor film. However, It may not be distinguishable from an amorphous oxide semiconductor film depending on the analysis method. For example, when performing structural analysis on the nc - OS film using an XRD apparatus that uses X - rays with a diameter larger than that of the crystal part, no peak indicating the crystal plane is detected in the analysis by the out - of - plane method. Also, when performing electron diffraction (also called limited - field electron diffraction) on the nc - OS film using an electron beam with a probe diameter larger than that of the crystal part (for example, 50 nm or more), a diffraction pattern such as a halo pattern is observed. On the other hand, when performing nano - beam electron diffraction on the nc - OS film using an electron beam with a probe diameter close to or smaller than the size of the crystal part, spots are observed. (For example, 50 nm or more), a diffraction pattern such as a halo pattern is observed. Also, when performing nano - beam electron diffraction on the nc - OS film, a region with high brightness may be observed as if drawing a circle (ring - shaped). Also, when performing nano - beam electron diffraction on the nc - OS film, a plurality of spots may be observed within the ring - shaped region (see Fig. 30(B)). When performing nano - beam electron diffraction on the nc - OS film, spots are observed. When performing nano - beam electron diffraction on the nc - OS film, a region with high brightness may be observed as if drawing a circle (ring - shaped). When performing nano - beam electron diffraction on the nc - OS film, a plurality of spots may be observed within the ring - shaped region (see Fig. 30(B)). (See Fig. 30(B).)

[0301] The nc - OS film is an oxide semiconductor film with higher regularity than an amorphous oxide semiconductor film. Therefore, the density of defect levels in the nc - OS film is lower than that in the amorphous oxide semiconductor film. However, , In the nc-OS film, no regularity is observed in the crystal orientation between different crystal parts. Therefore, the nc- OS film has a higher density of defect levels than the CAAC-OS film.

[0302] Note that the oxide semiconductor film may be, for example, an amorphous oxide semiconductor film, a microcrystalline oxide semiconductor film, or a C A laminated film having two or more of the AAC-OS films may also be used.

[0303] When the oxide semiconductor film has a plurality of structures, structural analysis may be possible by using nano-beam electron diffraction. analysis may be possible in some cases.

[0304] Fig. 30(C) shows a transmission electron diffraction measurement apparatus having an electron gun chamber 10, an optical system 12 below the electron gun chamber 10, a sample chamber 14 below the optical system 12, an optical system 16 below the sample chamber 14, an observation chamber 20 below the optical system 16, a camera 18 installed in the observation chamber 20, and a film chamber 22 below the observation chamber 20. The camera 18 is installed facing the inside of the observation chamber 20. Note that the film chamber 22 may not be provided. of the sample chamber 14, an optical system 16 below the sample chamber 14, an observation chamber 20 below the optical system 16, a camera 18 installed in the observation chamber 20, and a film chamber 22 below the observation chamber 20. The camera 18 is installed facing the inside of the observation chamber 20. Note that the film chamber 22 may not be provided. room 20, and a film chamber 22 below the observation chamber 20. The camera 18 is installed facing the inside of the observation chamber 20. Note that the film chamber 22 may not be provided. The camera 18 is installed facing the inside of the observation chamber 20. Note that the film chamber 22 may not be provided. The film chamber 22 may not be provided.

[0305] Further, Fig. 30(D) shows the internal structure of the transmission electron diffraction measurement apparatus shown in Fig. 30(C). Inside the transmission electron diffraction measurement apparatus, electrons emitted from an electron gun installed in the electron gun chamber 10 are irradiated onto a substance 28 disposed in the sample chamber 14 through the optical system 12. The electrons that have passed through the substance 28 enter a fluorescent plate 32 installed inside the observation chamber 20 through the optical system 16. In the fluorescent plate 32, a transmission electron diffraction pattern can be measured by a pattern appearing according to the intensity of the incident electrons. Inside the transmission electron diffraction measurement apparatus, electrons emitted from an electron gun installed in the electron gun chamber 10 are irradiated onto a substance 28 disposed in the sample chamber 14 through the optical system 12. The electrons that have passed through the substance 28 enter a fluorescent plate 32 installed inside the observation chamber 20 through the optical system 16. In the fluorescent plate 32, a transmission electron diffraction pattern can be measured by a pattern appearing according to the intensity of the incident electrons. The electrons emitted from the electron gun installed in the electron gun chamber 10 are irradiated onto the substance 28 disposed in the sample chamber 14 through the optical system 12. The electrons that have passed through the substance 28 enter a fluorescent plate 32 installed inside the observation chamber 20 through the optical system 16. In the fluorescent plate 32, a transmission electron diffraction pattern can be measured by a pattern appearing according to the intensity of the incident electrons. The electrons that have passed through the substance 28 enter a fluorescent plate 32 installed inside the observation chamber 20 through the optical system 16. In the fluorescent plate 32, a transmission electron diffraction pattern can be measured by a pattern appearing according to the intensity of the incident electrons. In the fluorescent plate 32, a transmission electron diffraction pattern can be measured by a pattern appearing according to the intensity of the incident electrons. be measured.

[0306] The camera 18 is installed facing the fluorescent plate 32, and captures the pattern appearing on the fluorescent plate 32. It is possible to image. The angle formed by the straight line passing through the center of the lens of camera 18 and the center of the fluorescent plate 32 and the upper surface of the fluorescent plate 32 is, for example, 15° or more and 80° or less, 30° or more and 75° or less, or 45° or more and 70° or less. The smaller this angle, the greater the distortion of the transmission electron diffraction pattern imaged by camera 18. However, if the angle is known in advance, it is also possible to correct the distortion of the obtained transmission electron diffraction pattern. Note that camera 18 may be installed in film chamber 22. For example, camera 18 may be installed in film chamber 22 so as to face the incident direction of electrons 24. In this case, a transmission electron diffraction pattern with little distortion can be photographed from the back surface of fluorescent plate 32. The sample chamber 14 is provided with a holder for fixing the substance 28 which is the sample. The holder has a structure that allows electrons passing through the substance 28 to pass through. The holder may, for example, have a function of moving the substance 28 in the X-axis, Y-axis, Z-axis, etc. The moving function of the holder has an accuracy of moving, for example, in the range of 1 nm or more and 10 nm or less, 5 nm or more and 50 nm or less, 10 nm or more and 100 n m or less, 50 nm or more and 500 nm or less, 100 nm or more and 1 μm or less, etc. These ranges may be set to the optimal range according to the structure of the substance 28. Next, a method for measuring the transmission electron diffraction pattern of a substance using the above-described transmission electron diffraction measuring apparatus will be described. For example, as shown in Fig. 30(D), by changing (scanning) the irradiation position of electrons 24 which are nano-beams in the substance, it is possible to confirm how the structure of the substance changes.

[0307]

[0308]

[0309] ​​​​​​​​​​​​ This is possible. When the substance 28 is a CAAC-OS film, a diffraction pattern as shown in Fig. 30(A) is observed. Or, when the substance 28 is an nc-OS film, a diffraction pattern as shown in Fig. 30(B) is observed.

[0310] Incidentally, even if the substance 28 is a CAAC-OS film, a diffraction pattern similar to that of an nc-OS film etc. may be partially observed. Therefore, the quality of the CAAC-OS film may be represented by the ratio of the area where the diffraction pattern of the CAAC-OS film in a certain range is observed (also referred to as the CAAC conversion rate). For example, for a high-quality CAAC-OS film the CAAC conversion rate is 50% or more, preferably 80% or more, more preferably 90% or more, and even more preferably 95% or more. Note that the ratio of the area where a diffraction pattern different from that of the CAAC-OS film is observed is denoted as the non-CAAC conversion rate.

[0311] As an example, for each sample having a CAAC-OS film immediately after film formation (denoted as as-sputtered) or after heat treatment at 450 °C in an oxygen-containing atmosphere, a transmission electron diffraction pattern was acquired while scanning the upper surface. Here, the diffraction pattern was observed while scanning at a speed of 5 nm / second for 60 seconds, and the observed diffraction pattern was converted into still images every 0.5 seconds to derive the CAAC conversion rate. Note that a nano-beam with a probe diameter of 1 nm was used as the electron beam. The same measurement was performed on 6 samples. And for calculating the CAAC conversion rate, the average value of the 6 samples was used.

[0312] The CAAC conversion rate for each sample is shown in Fig. 31(A). The C of the CAAC-OS film immediately after film formation ​​​​​The AAC conversion rate was 75.7% (the non-CAAC conversion rate was 24.3%). Also, after heating at 450°C the CAAC conversion rate of the CAAC-OS film was 85.3% (the non-CAAC conversion rate was 14.7%) It can be seen that the CAAC conversion rate after the heat treatment at 450°C is higher than that immediately after film formation. That is, it can be seen that by heat treatment at a high temperature (for example, 400°C or higher), the non-CAAC conversion rate becomes low (the CAAC conversion rate becomes high). Also, it can be seen that a CAAC-OS film having a high CAAC conversion rate can be obtained even in heat treatment below 500°C.

[0313] Here, most of the diffraction patterns different from those of the CAAC-OS film were the same as those of the nc-OS film. Also, in the measurement region, the amorphous oxide semiconductor film could not be confirmed. Therefore, it is suggested that the region having the same structure as the nc-OS film is rearranged under the influence of the structure of the adjacent region by heat treatment and CAACified.

[0314] Figures 31(B) and 31(C) are plan-view TEM images of the CAAC- OS film immediately after film formation and after heat treatment at 450°C. By comparing Figure 31(B) and Figure 31(C), it can be seen that the CAAC-OS film after heat treatment at 4 50°C has a more homogeneous film quality. That is, it can be seen that the film quality of the CAAC-OS film is improved by heat treatment at a high temperature.

[0315] Using such a measurement method, structural analysis of an oxide semiconductor film having a plurality of structures may be possible.

[0316] The CAAC-OS film can be formed, for example, by the following method.

[0317] ​​​​​The CAAC-OS film is formed, for example, by using a target for sputtering an oxide semiconductor that is polycrystalline and by a sputtering method.

[0318] By increasing the substrate temperature during film formation, migration of sputtering particles occurs after reaching the substrate. Specifically, the film is formed with the substrate temperature being 100°C or higher and 740°C or lower, preferably 200°C or higher and 500°C or lower. By increasing the substrate temperature during film formation, when the sputtering particles reach the substrate, migration occurs on the substrate, and the flat surface of the sputtering particles adheres to the substrate. At this time, since the sputtering particles are positively charged, the sputtering particles adhere to the substrate while repelling each other, so that the sputtering particles do not accumulate unevenly and overlap, and a CAAC-OS film with a uniform thickness can be formed.

[0319] By reducing the incorporation of impurities during film formation, it is possible to suppress the crystal state from being disrupted by the impurities. For example, the concentration of impurities (such as hydrogen, water, carbon dioxide, and nitrogen) present in the film formation chamber may be reduced. Also, the concentration of impurities in the film formation gas may be reduced. Specifically, a film formation gas having a dew point of -80°C or lower, preferably -100°C or lower, is used.

[0320] Also, it is preferable to reduce plasma damage during film formation by increasing the oxygen ratio in the film formation gas and optimizing the power. The oxygen ratio in the film formation gas is 30 vol% or more, preferably 100 vol%.

[0321] Alternatively, the CAAC-OS film is formed by the following method.

[0322] First, a first oxide semiconductor film is formed to a thickness of 1 nm or more and less than 10 nm. The first oxide ​The oxide semiconductor film is formed by a sputtering method. Specifically, the substrate temperature is 100°C or higher and 500°C or lower, preferably 150°C or higher and 450°C or lower, and the oxygen ratio in the film-forming gas is 30 volume % or higher, preferably 100 volume %, for film formation.

[0323] Next, a heat treatment is performed to obtain a first CAAC-OS film with high crystallinity from the first oxide semiconductor film The temperature of the heat treatment is 350°C or higher and 740°C or lower, preferably 450°C or higher and 650 °C or lower. Also, the time of the heat treatment is 1 minute or longer and 24 hours or shorter, preferably 6 minutes or longer and 4 hours or shorter. The heat treatment may be performed in an inert atmosphere or an oxidizing atmosphere. Preferably after performing the heat treatment in an inert atmosphere, the heat treatment is performed in an oxidizing atmosphere. By the heat treatment in an inert atmosphere, the impurity concentration of the first oxide semiconductor film can be reduced in a short time. On the other hand, oxygen vacancies may be generated in the first oxide semiconductor film by the heat treatment in an inert atmosphere. In that case, the oxygen vacancies can be reduced by the heat treatment in an oxidizing atmosphere. Note that the heat treatment may be performed under a reduced pressure of 1000 Pa or lower, 100 Pa or lower, 10 Pa or lower, or 1 Pa or lower. Under reduced pressure, the impurity concentration of the first oxide semiconductor film can be reduced even more in a short time.

[0324] When the thickness of the first oxide semiconductor film is 1 nm or more and less than 10 nm, it can be more easily crystallized by the heat treatment than when the thickness is 1 0 nm or more.

[0325] Next, a second oxide semiconductor film having the same composition as the first oxide semiconductor film is formed with a thickness of 10 nm or more and 5 0 nm or less. The second oxide semiconductor film is formed by a sputtering method. ​Specifically, the substrate temperature is set to 100°C or higher and 500°C or lower, preferably 150°C or higher and 450 °C or lower, and the oxygen ratio in the film-forming gas is set to 30% by volume or higher, preferably 100% by volume, and a film is formed.

[0326] Next, a heat treatment is performed to cause solid-phase growth of the second oxide semiconductor film from the first CAAC-OS film, thereby obtaining a second CAAC-OS film with high crystallinity. The temperature of the heat treatment is 350 °C or higher and 740°C or lower, preferably 450°C or higher and 650°C or lower. Also, the time of the heat treatment is 1 minute or longer and 24 hours or shorter, preferably 6 minutes or longer and 4 hours or shorter. Further, the heat treatment may be performed in an inert atmosphere or an oxidizing atmosphere. Preferably, after performing the heat treatment in an inert atmosphere, the heat treatment is performed in an oxidizing atmosphere. By the heat treatment in the inert atmosphere, the impurity concentration of the second oxide semiconductor film can be reduced in a short time. On the other hand, oxygen vacancies may be generated in the second oxide semiconductor film by the heat treatment in the inert atmosphere. In that case, the oxygen vacancies can be reduced by the heat treatment in the oxidizing atmosphere. Note that the heat treatment may be performed under a reduced pressure of 1 000 Pa or lower, 100 Pa or lower, 10 Pa or lower, or 1 Pa or lower. Under reduced pressure, the impurity concentration of the second oxide semiconductor film can be reduced in an even shorter time. As described above, a CAAC-OS film having a total thickness of 10 nm or more can be formed. This embodiment corresponds to a modification, addition, correction, deletion, application, generalization, or specialization of part or all of other embodiments. Therefore, the

[0327]

[0328] present embodiment ​​​​​​​​​​For some or all of them, they can be freely combined with, applied to, or replaced by some or all of other embodiments and then implemented. It can be implemented by being applied or replaced.

[0329] (Embodiment 10) In other embodiments, various examples are shown. However, one aspect of the present invention is not limited to these. It is not limited thereto.

[0330] For example, in this specification and the like, transistors with various structures can be used as transistors. Therefore, there is no limitation on the type of transistor to be used. As an example of a transistor, a transistor having single-crystalline silicon, or a transistor having a non-single-crystalline semiconductor film typified by amorphous silicon, polycrystalline silicon, microcrystalline (also referred to as microcrystal, nanocrystal, semi-amorphous) silicon, etc. can be used. That is, there is no limitation. As an example of a transistor, a transistor having single-crystalline silicon, or a transistor having a non-single-crystalline semiconductor film typified by amorphous silicon, polycrystalline silicon, microcrystalline (also referred to as microcrystal, nanocrystal, semi-amorphous) silicon, etc. can be used. Or, a thin-film transistor (TFT) obtained by thinning such semiconductors can be used. When using a TFT, there are various advantages. For example, since it can be manufactured at a lower temperature than in the case of single-crystalline silicon, it is possible to reduce the manufacturing cost or avoid increasing the size of the manufacturing apparatus. Since the size of the manufacturing apparatus can be increased, it can be manufactured on a large substrate. Therefore, since a large number of display devices can be manufactured simultaneously, it can be manufactured at a low cost. Or, since the manufacturing temperature is low, a substrate with weak heat resistance can be used. Therefore, a transistor can be manufactured on a substrate having translucency. Or, the transmission of light in a display element can be controlled by using a transistor on a substrate having translucency. Or, since the film thickness of the transistor is thin, a part of the film forming the transistor can transmit light. Therefore, the aperture ratio can be improved. Since it can be manufactured at a lower temperature than in the case of single-crystalline silicon, it is possible to reduce the manufacturing cost or avoid increasing the size of the manufacturing apparatus. Since the manufacturing apparatus can be made larger, it can be manufactured on a large substrate. Therefore, since a large number of display devices can be manufactured simultaneously, it can be manufactured at a low cost. Or, since the manufacturing temperature is low, a substrate with weak heat resistance can be used. Therefore, a transistor can be manufactured on a substrate having translucency. Or, the transmission of light in a display element can be controlled by using a transistor on a substrate having translucency. Or, since the film thickness of the transistor is thin, a part of the film forming the transistor can transmit light. Therefore, the aperture ratio can be improved. It can be implemented by being applied or replaced. Or, since the film thickness of the transistor is thin, a part of the film forming the transistor can transmit light. Therefore, the aperture ratio can be improved. It can be improved.

[0331] In addition, when manufacturing polycrystalline silicon, by using a catalyst (such as nickel), the crystallinity can be further improved, making it possible to manufacture transistors with good electrical characteristics. As a result, a gate driver circuit (scan line driving circuit), a source driver circuit (signal line driving circuit ), and a signal processing circuit (such as a signal generation circuit, a gamma correction circuit, a DA conversion circuit, etc.) can be integrally formed on a substrate.

[0332] In addition, when manufacturing microcrystalline silicon, by using a catalyst (such as nickel), the crystallinity can be further improved, making it possible to manufacture transistors with good electrical characteristics. At this time, it is also possible to improve the crystallinity only by applying heat treatment without performing laser irradiation. As a result, a part of the source driver circuit (such as an analog switch) and a gate driver circuit (scan line driving circuit) can be integrally formed on a substrate. In addition, when laser irradiation is not performed for crystallization, unevenness in the crystallinity of silicon can be suppressed. Therefore, an image with improved image quality can be displayed. However, it is possible to manufacture polycrystalline silicon or microcrystalline silicon without using a catalyst (such as nickel).

[0333] In addition, although it is desirable to improve the crystallinity of silicon to polycrystalline or microcrystalline, etc. for the entire panel, it is not limited thereto. The crystallinity of silicon may be improved only in a part of the region of the panel. Selectively improving the crystallinity can be achieved by selectively irradiating laser light, etc. For example, only in the peripheral circuit region which is a region other than the pixels, only in the regions such as the gate driver circuit and the source driver circuit, or only in the source driver Even if the laser light is irradiated only on the area of a part of the inverter circuit (for example, an analog switch), it is okay. As a result, crystallization of silicon can be promoted only in the area where it is necessary to operate the circuit at high speed. Since the pixel area has low necessity to operate at high speed, the pixel circuit can operate without problem even if the crystallinity is not improved. By doing so, since the area for improving the crystallinity can be reduced, the manufacturing process can be shortened. Therefore, the throughput can be improved and the manufacturing cost can be reduced. Or, since the number of manufacturing apparatuses required can also be reduced to a small number, the manufacturing cost can be reduced.

[0334] As an example of the transistor, a transistor having a compound semiconductor (for example, SiGe, GaAs, etc.), or an oxide semiconductor (for example, ZnO, InGaZnO, IZO (indium zinc oxide), ITO (indium tin oxide), SnO, TiO, AlZnSnO (AZTO), ITZO (In-Sn-Zn-O), etc.) can be used. Or, a thin film transistor obtained by thinning these compound semiconductors or these oxide semiconductors can be used. By these, the manufacturing temperature can be lowered, so that, for example, it becomes possible to manufacture a transistor at room temperature. As a result, a transistor can be directly formed on a substrate with low heat resistance, for example, a plastic substrate or a film substrate. Note that these compound semiconductors or oxide semiconductors can be used not only for the channel portion of the transistor but also for other applications. For example, these compound semiconductors or oxide semiconductors can be used as wiring, a resistance element, a pixel electrode, or an electrode having translucency. ​​​​​​​​​​​​​​It is possible to do so. Since they can be formed simultaneously with the transistor, the cost can be reduced.

[0335] As an example of a transistor, a transistor formed using an inkjet method or a printing method or the like can be used. By these, it can be manufactured at room temperature, at a low degree of vacuum, or on a large substrate. Therefore, since it is possible to manufacture without using a mask (reticle), the layout of the transistor can be easily changed. Or, since it is possible to manufacture without using a resist, the material cost is reduced and the number of processes can be reduced. Or, since it is possible to apply a film only to necessary parts, it can be made at low cost without wasting materials compared to the manufacturing method of etching after

[0336] forming a film over the entire surface. As an example of a transistor, a transistor having an organic semiconductor or a carbon nanotube or the like can be used. By these, a transistor can be formed on a substrate that can be bent. An apparatus using a transistor having an organic semiconductor or a carbon nanotube can be made

[0337] more resistant to impact. In addition, various structures of transistors can be used as the transistor. For example, as the transistor, a MOS transistor, a junction transistor, a bipolar transistor or the like can be used. By using a MOS transistor as the transistor, the size of the transistor can be reduced. Therefore, a large number of By doing so, a large current can flow. Therefore, the circuit can be operated at high speed. It is also possible to form a MOS transistor and a bipolar transistor mixed on one substrate. This can achieve low power consumption, miniaturization, high-speed operation, etc. It can be done.

[0338] For example, in this specification, etc., as an example of a transistor, a transistor with a multi-gate structure having two or more gate electrodes can be used. When a multi-gate structure is used, since the channel regions are connected in series, it has a structure in which a plurality of transistors are connected in series. Therefore, with the multi-gate structure, reduction of the off-current and improvement of the breakdown voltage of the transistor (improvement of reliability) can be achieved. Or, with the multi-gate structure, when operating in the saturation region, even if the voltage between the drain and the source changes, the current between the drain and the source does not change much, and a voltage-current characteristic with a flat slope can be obtained. Using the voltage-current characteristic with a flat slope, an ideal current source circuit or an active load having a very high resistance value can be realized. As a result, a differential circuit or a current mirror circuit with good characteristics can be realized. It can be done. It can be done.

[0339] As an example of a transistor, a transistor having a structure in which gate electrodes are arranged above and below the channel can be applied. By arranging gate electrodes above and below the channel, a circuit configuration is obtained in which a plurality of transistors are connected in parallel. Therefore, since the channel region increases, an increase in the current value can be achieved. Or, by arranging gate electrodes above and below the channel, depletion layers are likely to be formed. Therefore, Thus, the S value can be improved.

[0340] As an example of the transistor, a structure in which a gate electrode is disposed over the channel region a structure in which a gate electrode is disposed under the channel region, a normal stagger structure, an inverse stagger structure, a structure in which the channel region is divided into a plurality of regions, a structure in which the channel regions are connected in parallel, or a structure in which the channel regions are connected in series can be used. Alternatively, as the transistor, a planar type, a FIN type (fin type), a TRI-GATE type (tri gate type), a top gate type, a bottom gate type, a double gate type (with gates disposed above and below the channel etc.) can have various configurations.

[0341] As an example of the transistor, a transistor having a structure in which a source electrode and / or a drain electrode overlaps with the channel region (or a part thereof) can be used. By adopting a structure in which a source electrode and / or a drain electrode overlaps with the channel region (or a part thereof), it is possible to prevent the operation from becoming unstable due to the accumulation of charges in a part of the channel region.

[0342] As an example of the transistor, a structure provided with an LDD region can be applied. By providing the LDD region, it is possible to reduce the off-current or improve the breakdown voltage (reliability) of the transistor. Alternatively, by providing the LDD region, when operating in the saturation region, even if the voltage between the drain and the source changes, the drain current does not change much, and a flat voltage-current characteristic can be obtained.

[0343] For example, in this specification and the like, transistors can be formed using various substrates. ​​​​​​comes. The type of the substrate is not limited to a specific one. As an example of the substrate, a semi- conductor substrate (e.g., a single crystal substrate or a silicon substrate), an SOI substrate, a glass substrate, a quartz substrate, a plastic substrate, a metal substrate, a stainless steel substrate, a substrate having a stainless steel foil, a tungsten substrate, a substrate having a tungsten foil, a flexible substrate, a laminated film, paper containing fibrous materials, or a base film, etc. are available. As an example of the glass substrate, there are barium borosilicate glass, aluminoborosilicate glass, or soda lime glass, etc. As an example of a flexible substrate, a laminated film, a base film, etc., the following are available. For example, there are plastics typified by polyethylene terephthalate (PET), polyethylene naphthalate (PEN), and polyethersulfone (PES). Or, as an example, there are synthetic resins such as acrylic. Or, as an example, there are polypropylene, polyester, polyvinyl fluoride, or polyvinyl chloride, etc. Or, as an example, there are polyamide, polyimide, aramid, epoxy, inorganic vapor deposition films, or papers, etc. In particular, by manufacturing a transistor using a semiconductor substrate, a single crystal substrate, or an SOI substrate, etc., variations in characteristics, size, or shape, etc. are small, and a transistor with high current capacity and small size can be manufactured. By configuring a circuit with such a transistor, power consumption reduction of the circuit or high integration of the circuit can be achieved. In addition, a transistor may be formed using a certain substrate, and then the transistor may be transposed to another substrate and the transistor may be arranged on another substrate. An example of the substrate to which the transistor is transposed

[0344] is as follows. ​As the substrate, in addition to the substrate on which the above-mentioned transistor can be formed, a paper substrate, a cellophane substrate, etc. Aramid film substrate, polyimide film substrate, stone substrate, wood substrate, cloth substrate (Natural fibers (silk, cotton, linen), synthetic fibers (nylon, polyurethane, polyester) or Recycled fibers (including acetate, cupra, rayon, recycled polyester, etc.), leather By using these substrates, transistors with good characteristics can be produced. Formation of transistors with low power consumption, fabrication of durable devices, and heat resistance This allows for a reduction in weight or thickness.

[0345] All circuits required to realize a given function are mounted on the same substrate (e.g., glass It can be formed on a substrate such as a silicon substrate, a plastic substrate, a single crystal substrate, or an SOI substrate. This reduces the cost by reducing the number of components, or reduces the number of connections to circuit components. This can improve reliability.

[0346] It is possible that not all of the circuits required to realize a given function are formed on the same substrate. In other words, part of the circuitry required to achieve a given function is formed on a certain substrate. Another part of the circuitry required to achieve a given function is formed on a different substrate. For example, some of the circuits required to realize a specific function can be made of glass. Another part of the circuitry required to realize a given function is formed on the single crystal substrate. (or SOI substrate). The single crystal substrate (also called IC chip) on which another part of the circuit required for the semiconductor device is formed is called COG ( By Chip On Glass, it is possible to connect to a glass substrate and place the IC chip on the glass substrate. Or, the IC chip can be connected to the glass substrate using TAB (Tape Automated Bonding), COF (Chip On Film), SMT (Surface Mount Technology), or a printed circuit board, etc. In this way, since a part of the circuit is formed on the same substrate as the pixel portion, it is possible to reduce costs by reducing the number of components, or to improve reliability by reducing the number of connection points to circuit components. In particular, circuits in parts with a large driving voltage or high driving frequency often consume a large amount of power. Therefore, such a circuit is formed on a substrate different from the pixel portion (for example, a single crystal substrate) to constitute an IC chip. By using this IC chip, it is possible to prevent an increase in power consumption. It is possible to place the chip. Or, the IC chip can be connected to the glass substrate using TAB (Tape Automated Bonding), COF (Chip On Film), SMT (Surface Mount Technology), or a printed circuit board, etc. Automated Bonding), COF (Chip On Film), SMT (Su rface Mount Technology), or a printed circuit board, etc. to connect to the glass substrate. In this way, since a part of the circuit is formed on the same substrate as the pixel portion, it is possible to reduce costs by reducing the number of components, or to improve reliability by reducing the number of connection points to circuit components. By reducing the number of components, or by reducing the number of connection points to circuit components, it is possible to reduce costs or improve reliability. In particular, circuits in parts with a large driving voltage or high driving frequency often consume a large amount of power. Therefore, such a circuit is formed on a substrate different from the pixel portion (for example, a single crystal substrate) to constitute an IC chip. By using this IC chip, it is possible to prevent an increase in power consumption. In particular, for circuits with a large driving voltage or high driving frequency, the power consumption often increases. Therefore, such a circuit is formed on a substrate different from the pixel portion (for example, a single crystal substrate) to constitute an IC chip. By using this IC chip, it is possible to prevent an increase in power consumption. By using this IC chip, it is possible to prevent an increase in power consumption.

[0347] Regarding the content not defined in the drawings or text in the specification, an invention can be constituted by excluding that content. Or, for a certain value, when a numerical range indicated by an upper limit value and a lower limit value, etc. is described, the invention can be defined by arbitrarily narrowing that range, or by excluding a point within that range, thereby excluding a part of that range. By these means, for example, it is possible to define that the prior art does not fall within the technical scope of the present invention. Regarding the content not defined in the drawings or text in the specification, an invention can be constituted by excluding that content. Or, for a certain value, when a numerical range indicated by an upper limit value and a lower limit value, etc. is described, the invention can be defined by arbitrarily narrowing that range, or by excluding a point within that range, thereby excluding a part of that range. By these means, for example, it is possible to define that the prior art does not fall within the technical scope of the present invention. By these, for example, it can be defined that the prior art does not fall within the technical scope of the present invention. That is, it can be defined that the prior art does not fall within the technical scope of the present invention.

[0348] As a specific example, assume that a circuit diagram using the first to fifth transistors is described in a certain circuit. In that case, it means that the circuit does not have the sixth transistor. In that case, it means that the circuit does not have the sixth transistor. It is possible to define it as an invention. Or, the circuit does not have a capacitive element It is possible to define it. Furthermore, the invention can be constituted by defining that the circuit does not have a sixth transistor having a certain specific connection structure Or The invention can be constituted by defining that the circuit does not have a capacitive element having a certain specific connection structure For example, it is possible to define the invention as not having a sixth transistor whose gate is connected to the gate of the third transistor Or For example, it is possible to define the invention as not having a capacitive element whose first electrode is connected to the gate of the third transistor

[0349] As another specific example, for a certain value, for example, it is described that "it is preferable that a certain voltage is 3V or more and 10V or less". In that case, for example, the invention can be defined as excluding the case where a certain voltage is -2V or more and 1V or less. Or, for example, the invention can be defined as excluding the case where a certain voltage is 13V or more. Incidentally For example, it is also possible to define the invention as the voltage being 5V or more and 8V or less. Incidentally For example, it is also possible to define the invention as the voltage being approximately 9V. Incidentally, for example It is also possible to define the invention as the voltage being 3V or more and 10V or less, but excluding the case where it is 9V

[0350] As another specific example, for a certain value, for example, it is described that "it is preferable that a certain voltage is 10V". In that case, for example, the invention can be defined as excluding the case where a certain voltage is -2V or more and 1V or less. Or, for example the invention can be defined as excluding the case where a certain voltage is​​​​ It is possible to define the invention, except when it is above 13V.

[0351] As another specific example, regarding the properties of a certain substance, for example, it is assumed that it is described as "a certain film is an insulating film". In that case, for example, it is possible to define the invention, except when the insulating film is an organic insulating film. Or, for example, it is possible to define the invention, except when the insulating film is an inorganic insulating film. In that case, for example, it is possible to define the invention, except when the insulating film is an inorganic insulating film.

[0352] As another specific example, regarding a certain laminated structure, for example, it is assumed that it is described as "a certain film is provided between A and B". In that case, for example, it is possible to define the invention, except when the film is a laminated film of four or more layers. Or, for example, it is possible to define the invention, except when a conductive film is provided between A and the film. In that case, for example, it is possible to define the invention, except when a conductive film is provided between A and the film.

[0353] Note that the invention described in this specification and the like can be implemented by various people. However, its implementation may be carried out by multiple people. For example, in the case of a transceiver system, Company A may manufacture and sell a transmitter, and Company B may manufacture and sell a receiver. As another example, in the case of a light-emitting device having a TFT and a light-emitting element, a semiconductor device on which the TFT is formed is manufactured and sold by Company A. And Company B may purchase the semiconductor device and form a light-emitting element on the semiconductor device to complete it as a light-emitting device. In such a case, for either Company A or Company B, an invention for which patent infringement can be claimed. In such a case, for either Company A or Company B, an invention for which patent infringement can be claimed. In such a case, for either Company A or Company B, an invention for which patent infringement can be claimed.

[0354] In such cases, for either Company A or Company B, an invention for which patent infringement can be claimed. One aspect can be configured. Therefore, it is possible to claim patent infringement against Company A or Company B. One aspect of the invention that can be formed is clear and can be determined to be described in this specification and the like. For example, in the case of a transmission / reception system, one aspect of the invention can be configured only by the transmitter, and one aspect of the invention can be configured only by the receiver. One aspect of these inventions is clear and can be determined to be described in this specification and the like. As another example, in the case of a light-emitting device having a TFT and a light-emitting element, one aspect of the invention can be configured only by the semiconductor device on which the TFT is formed, and one aspect of the invention can be configured only by the light-emitting device having the TFT and the light-emitting element. One aspect of these inventions is clear and can be determined to be described in this specification and the like.

[0355] In this specification and the like, for all terminals of active elements (such as transistors and diodes), passive elements ( capacitive elements, resistive elements, etc.), even if the connection destination is not specified, a person skilled in the art may be able to configure one aspect of the invention. That is, even if the connection destination is not specified, it can be said that one aspect of the invention is clear. And when the content of the specified connection destination is described in this specification and the like, it may be possible to determine that one aspect of the invention without specifying the connection destination is described in this specification and the like. In particular, when there are multiple cases where the connection destination of the terminal is considered, it is not necessary to limit the connection destination of the terminal to a specific location. Therefore, it may be possible to configure one aspect of the invention by specifying the connection destination only for some terminals of active elements (such as transistors and diodes), passive elements (capacitive elements, resistive elements, etc.).

[0356] In this specification and the like, for a certain circuit, if at least the connection destination is specified, it may be possible for those skilled in the art to identify the invention. Or, for a certain circuit, if at least the function is specified, it may be possible for those skilled in the art to identify the invention. That is to say, if the function is specified, it can be said that one aspect of the invention is clear. And, in some cases, it may be possible to determine that one aspect of the invention in which the function is specified is described in this specification and the like. Therefore, for a certain circuit, even if the function is not specified, as long as the connection destination is specified, it is disclosed as one aspect of the invention and can constitute one aspect of the invention. Or, for a certain circuit, even if the connection destination is not specified, as long as the function is specified, it is disclosed as one aspect of the invention and can constitute one aspect of the invention. Moreover, in this specification and the like, in a figure or text described in a certain embodiment, it is possible to extract a part thereof to constitute one aspect of the invention. Therefore, when a figure or text describing a certain part is described, the content obtained by extracting a part of the figure or text thereof is also disclosed as one aspect of the invention and can constitute one aspect of the invention. For this reason, for example, in a drawing or text in which one or more active elements (such as transistors, diodes, etc.), wirings, passive elements (such as capacitive elements, resistive elements, etc.), conductive layers, insulating layers, semiconductor layers, organic materials, inorganic materials, components, devices, operation methods, manufacturing methods, etc. are described, it is possible to extract a part thereof to constitute one aspect of the invention. For example, it has N (N is an integer) circuit elements (such as transistors, capacitive elements, etc.). That is, if the function is specified, it can be said that one aspect of the invention is clear. And, in some cases, it may be possible to determine that one aspect of the invention in which the function is specified is described in this specification and the like. Therefore, for a certain circuit, even if the function is not specified, as long as the connection destination is specified, it is disclosed as one aspect of the invention and can constitute one aspect of the invention. Or, for a certain circuit, even if the connection destination is not specified, as long as the function is specified, it is disclosed as one aspect of the invention and can constitute one aspect of the invention. That is, if the function is specified, it can be said that one aspect of the invention is clear. And, in some cases, it may be possible to determine that one aspect of the invention in which the function is specified is described in this specification and the like. Therefore, for a certain circuit, even if the function is not specified, as long as the connection destination is specified, it is disclosed as one aspect of the invention and can constitute one aspect of the invention. Or, for a certain circuit, even if the connection destination is not specified, as long as the function is specified, it is disclosed as one aspect of the invention and can constitute one aspect of the invention. And, in some cases, it may be possible to determine that one aspect of the invention in which the function is specified is described in this specification and the like. Therefore, for a certain circuit, even if the function is not specified, as long as the connection destination is specified, it is disclosed as one aspect of the invention and can constitute one aspect of the invention. Or, for a certain circuit, even if the connection destination is not specified, as long as the function is specified, it is disclosed as one aspect of the invention and can constitute one aspect of the invention. Therefore, for a certain circuit, even if the function is not specified, as long as the connection destination is specified, it is disclosed as one aspect of the invention and can constitute one aspect of the invention. Or, for a certain circuit, even if the connection destination is not specified, as long as the function is specified, it is disclosed as one aspect of the invention and can constitute one aspect of the invention. Moreover, in this specification and the like, in a figure or text described in a certain embodiment, it is possible to extract a part thereof to constitute one aspect of the invention. Therefore, when a figure or text describing a certain part is described, the content obtained by extracting a part of the figure or text thereof is also disclosed as one aspect of the invention and can constitute one aspect of the invention. For this reason, for example, in a drawing or text in which one or more active elements (such as transistors, diodes, etc.), wirings, passive elements (such as capacitive elements, resistive elements, etc.), conductive layers, insulating layers, semiconductor layers, organic materials, inorganic materials, components, devices, operation methods, manufacturing methods, etc. are described, it is possible to extract a part thereof to constitute one aspect of the invention. For example, it has N (N is an integer) circuit elements (such as transistors, capacitive elements, etc.). Moreover, in this specification and the like, in a figure or text described in a certain embodiment, it is possible to extract a part thereof to constitute one aspect of the invention. Therefore, when a figure or text describing a certain part is described, the content obtained by extracting a part of the figure or text thereof is also disclosed as one aspect of the invention and can constitute one aspect of the invention. For this reason, for example, in a drawing or text in which one or more active elements (such as transistors, diodes, etc.), wirings, passive elements (such as capacitive elements, resistive elements, etc.), conductive layers, insulating layers, semiconductor layers, organic materials, inorganic materials, components, devices, operation methods, manufacturing methods, etc. are described, it is possible to extract a part thereof to constitute one aspect of the invention. For example, it has N (N is an integer) circuit elements (such as transistors, capacitive elements, etc.). Moreover, in this specification and the like, in a figure or text described in a certain embodiment, it is possible to extract a part thereof to constitute one aspect of the invention. Therefore, when a figure or text describing a certain part is described, the content obtained by extracting a part of the figure or text thereof is also disclosed as one aspect of the invention and can constitute one aspect of the invention. For this reason, for example, in a drawing or text in which one or more active elements (such as transistors, diodes, etc.), wirings, passive elements (such as capacitive elements, resistive elements, etc.), conductive layers, insulating layers, semiconductor layers, organic materials, inorganic materials, components, devices, operation methods, manufacturing methods, etc. are described, it is possible to extract a part thereof to constitute one aspect of the invention. For example, it has N (N is an integer) circuit elements (such as transistors, capacitive elements, etc.).

[0357] In this specification and the like, in a figure or text described in a certain embodiment, it is possible to extract a part thereof to constitute one aspect of the invention. Therefore, when a figure or text describing a certain part is described, the content obtained by extracting a part of the figure or text thereof is also disclosed as one aspect of the invention and can constitute one aspect of the invention. For this reason, for example, in a drawing or text in which one or more active elements (such as transistors, diodes, etc.), wirings, passive elements (such as capacitive elements, resistive elements, etc.), conductive layers, insulating layers, semiconductor layers, organic materials, inorganic materials, components, devices, operation methods, manufacturing methods, etc. are described, it is possible to extract a part thereof to constitute one aspect of the invention. For example, it has N (N is an integer) circuit elements (such as transistors, capacitive elements, etc.). Therefore, when a figure or text describing a certain part is described, the content obtained by extracting a part of the figure or text thereof is also disclosed as one aspect of the invention and can constitute one aspect of the invention. For this reason, for example, in a drawing or text in which one or more active elements (such as transistors, diodes, etc.), wirings, passive elements (such as capacitive elements, resistive elements, etc.), conductive layers, insulating layers, semiconductor layers, organic materials, inorganic materials, components, devices, operation methods, manufacturing methods, etc. are described, it is possible to extract a part thereof to constitute one aspect of the invention. For example, it has N (N is an integer) circuit elements (such as transistors, capacitive elements, etc.). Therefore, when a figure or text describing a certain part is described, the content obtained by extracting a part of the figure or text thereof is also disclosed as one aspect of the invention and can constitute one aspect of the invention. For this reason, for example, in a drawing or text in which one or more active elements (such as transistors, diodes, etc.), wirings, passive elements (such as capacitive elements, resistive elements, etc.), conductive layers, insulating layers, semiconductor layers, organic materials, inorganic materials, components, devices, operation methods, manufacturing methods, etc. are described, it is possible to extract a part thereof to constitute one aspect of the invention. For example, it has N (N is an integer) circuit elements (such as transistors, capacitive elements, etc.). Therefore, when a figure or text describing a certain part is described, the content obtained by extracting a part of the figure or text thereof is also disclosed as one aspect of the invention and can constitute one aspect of the invention. For this reason, for example, in a drawing or text in which one or more active elements (such as transistors, diodes, etc.), wirings, passive elements (such as capacitive elements, resistive elements, etc.), conductive layers, insulating layers, semiconductor layers, organic materials, inorganic materials, components, devices, operation methods, manufacturing methods, etc. are described, it is possible to extract a part thereof to constitute one aspect of the invention. For example, it has N (N is an integer) circuit elements (such as transistors, capacitive elements, etc.). Therefore, for example, in a drawing or text in which one or more active elements (such as transistors, diodes, etc.), wirings, passive elements (such as capacitive elements, resistive elements, etc.), conductive layers, insulating layers, semiconductor layers, organic materials, inorganic materials, components, devices, operation methods, manufacturing methods, etc. are described, it is possible to extract a part thereof to constitute one aspect of the invention. For example, it has N (N is an integer) circuit elements (such as transistors, capacitive elements, etc.). Therefore, for example, in a drawing or text in which one or more active elements (such as transistors, diodes, etc.), wirings, passive elements (such as capacitive elements, resistive elements, etc.), conductive layers, insulating layers, semiconductor layers, organic materials, inorganic materials, components, devices, operation methods, manufacturing methods, etc. are described, it is possible to extract a part thereof to constitute one aspect of the invention. For example, it has N (N is an integer) circuit elements (such as transistors, capacitive elements, etc.). Therefore, for example, in a drawing or text in which one or more active elements (such as transistors, diodes, etc.), wirings, passive elements (such as capacitive elements, resistive elements, etc.), conductive layers, insulating layers, semiconductor layers, organic materials, inorganic materials, components, devices, operation methods, manufacturing methods, etc. are described, it is possible to extract a part thereof to constitute one aspect of the invention. For example, it has N (N is an integer) circuit elements (such as transistors, capacitive elements, etc.). Therefore, for example, in a drawing or text in which one or more active elements (such as transistors, diodes, etc.), wirings, passive elements (such as capacitive elements, resistive elements, etc.), conductive layers, insulating layers, semiconductor layers, organic materials, inorganic materials, components, devices, operation methods, manufacturing methods, etc. are described, it is possible to extract a part thereof to constitute one aspect of the invention. For example, it has N (N is an integer) circuit elements (such as transistors, capacitive elements, etc.). Therefore, for example, in a drawing or text in which one or more active elements (such as transistors, diodes, etc.), wirings, passive elements (such as capacitive elements, resistive elements, etc.), conductive layers, insulating layers, semiconductor layers, organic materials, inorganic materials, components, devices, operation methods, manufacturing methods, etc. are described, it is possible to extract a part thereof to constitute one aspect of the invention. For example, it has N (N is an integer) circuit elements (such as transistors, capacitive elements, etc.). From a circuit diagram configured as such, it is possible to extract M (M is an integer, M < N) circuit elements (transistors, capacitor elements, etc.) to constitute one aspect of the invention. As another example, from a cross-sectional view configured with N (N is an integer) layers, it is possible to extract M (M is an integer, M < N) layers to constitute one aspect of the invention. As yet another example, from a flowchart configured with N (N is an integer) elements, it is possible to extract M (M is an integer, M < N) elements to constitute one aspect of the invention. In addition, in this specification and the like, when at least one specific example is described in the figure or text described in a certain embodiment, it will be easily understood by those skilled in the art to derive the upper concept of that specific example. Therefore, when at least one specific example is described in the figure or text described in a certain embodiment, the upper concept of that specific example is also disclosed as one aspect of the invention and can constitute one aspect of the invention. Note that in this specification and the like, at least the content described in the figure (even a part in the figure) is disclosed as one aspect of the invention and can constitute one aspect of the invention. Therefore, for a certain content, if it is described in the figure, even if it is not described in the text, that content is disclosed as one aspect of the invention and can constitute one aspect of the invention. Similarly, for a figure obtained by extracting a part of the figure, it is also disclosed as one aspect of the invention and can constitute one aspect of the invention.

[0358]

[0359]

[0360] In the figures, there are cases where the size, layer thickness, or area is exaggerated for clarity. Therefore, it is not necessarily limited to that scale. Thus, it is not necessarily limited to that scale.

[0361] In this specification, for example, when defining the shape of an object by "diameter", "particle diameter", "size", "dimension", "width", etc., it may be read as the length of one side in the smallest cube that can accommodate the object, or the equivalent circular diameter in one cross-section of the object. The equivalent circular diameter in one cross-section of an object refers to the diameter of a perfect circle that has the same area as one cross-section of the object.

[0362] Note that even when referred to as "semiconductor", for example, when the conductivity is sufficiently low, it may have the characteristics of an "insulator". Also, the boundary between "semiconductor" and "insulator" is ambiguous and may not be strictly distinguishable. Therefore, the "semiconductor" described in this specification may sometimes be rephrased as an "insulator". Similarly, the "insulator" described in this specification may sometimes be rephrased as a "semiconductor".

[0363] Also, even when referred to as "semiconductor", for example, when the conductivity is sufficiently high, it may have the characteristics of a "conductor". Also, the boundary between "semiconductor" and "conductor" is ambiguous and may not be strictly distinguishable. Therefore, the "semiconductor" described in this specification may sometimes be rephrased as a "conductor". Similarly, the "conductor" described in this specification may sometimes be rephrased as a "semiconductor".

[0364] Note that the impurities in the semiconductor film refer to, for example, components other than the main component constituting the semiconductor film. For example, an element with a concentration of less than 0.1 atomic% is an impurity. The inclusion of impurities ​​​​​​​​​​For example, carrier traps may be formed in the semiconductor film, the carrier mobility may decrease, or the crystallinity may decrease. When the semiconductor film is an oxide semiconductor film, examples of impurities that change the characteristics of the semiconductor film include, for example, Group 1 elements, Group 2 elements, Group 14 elements, Group 15 elements, transition metals other than the main component, etc. In particular, for example, hydrogen ( also contained in water), lithium, sodium, silicon, boron, phosphorus, carbon, nitrogen, etc. are present. In the case of an oxide semiconductor, oxygen deficiency may be formed due to the incorporation of impurities. Also, when the semiconductor film is a silicon film, examples of impurities that change the characteristics of the semiconductor film include, for example, Group 1 elements, Group 2 elements, Group 13 elements, Group 15 elements excluding oxygen and hydrogen, etc. .

[0365] In addition, in this specification, excess oxygen refers to, for example, oxygen contained in excess of the stoichiometric composition. Or, excess oxygen refers to, for example, oxygen released by heating. Excess oxygen can, for example, move inside the film or layer. The movement of excess oxygen can be when it moves between the atoms of the film or layer, or when it moves in a ball - bumping manner while replacing the oxygen that makes up the film or layer. Also, an insulating film containing excess oxygen is, for example, an insulating film having a function of releasing oxygen by heat treatment. .

[0366] In addition, in this specification, "parallel" refers to a state where two straight lines are arranged at an angle of - 10° or more and 10° or less. Therefore, cases where the angle is - 5° or more and 5° or less are also included. Also, "perpendicular" refers to a state where two straight lines are arranged at an angle of 80° or more and 100° or less. Therefore, cases where the angle is 85° or more and 95° or less are also included.

[0367] In the embodiment, as the conductive film, for example, a conductive film containing aluminum, titanium, chromium, cobalt, nickel, copper, yttrium, zirconium, molybdenum, ruthenium, silver, tantalum or tungsten may be used alone or in a stacked manner. Or, as the conductive film having permeability, for example, an oxide film such as an In-Zn-W oxide film, an In-Sn oxide film, an In-Zn oxide film, an indium oxide film, a zinc oxide film and a tin oxide film may be used. Further, the aforementioned oxide film may contain a trace amount of Al, Ga, Sb, F or the like. Also, a metal thin film that transmits light (preferably about 5 nm or more and 30 nm or less) can be used. For example, an Ag film, an Mg film or an Ag-Mg alloy film having a film thickness of 5 nm may be used. Or, as a film that efficiently reflects visible light, for example, a film containing lithium, aluminum, titanium, magnesium, lanthanum, silver, silicon or nickel may be used.

[0368] Also, as the insulating film, for example, an insulating film containing aluminum oxide, magnesium oxide, silicon oxide, silicon oxynitride, silicon nitride oxide, silicon nitride, gallium oxide, germanium oxide, yttrium oxide, zirconium oxide, lanthanum oxide, neodymium oxide, hafnium oxide or tantalum oxide may be used alone or in a stacked manner. Or, a resin film such as a polyimide resin, an acrylic resin, an epoxy resin or a silicone resin may be used.

[0369] Also, in this specification, when the crystal is trigonal or rhombohedral, it is represented as a hexagonal system.

[0370] In addition, terms such as first, second, and third used in this specification are given to avoid confusion of components and are not numerically limiting. Therefore, for example, "first" can be appropriately replaced with "second" or "third" and so on for explanation. For example, "first" can be appropriately replaced with "second" or "third" and so on for explanation. For example, "first" can be appropriately replaced with "second" or "third" and so on for explanation.

[0371] In this specification, when an etching process is performed after a photolithography process, the mask formed in the photolithography process shall be removed. In this specification, when an etching process is performed after a photolithography process, the mask formed in the photolithography process shall be removed.

[0372] In addition, a second gate for applying a potential to the back channel may be provided to the transistor. In that case, here, to distinguish the two gates, the terminal usually called the gate is referred to as the "front gate", and the other is referred to as the "back gate". In addition, a second gate for applying a potential to the back channel may be provided to the transistor. In that case, here, to distinguish the two gates, the terminal usually called the gate is referred to as the "front gate", and the other is referred to as the "back gate". In addition, a second gate for applying a potential to the back channel may be provided to the transistor. In that case, here, to distinguish the two gates, the terminal usually called the gate is referred to as the "front gate", and the other is referred to as the "back gate".

[0373] In addition, voltage refers to the potential difference between two points, and potential refers to the electrostatic energy (electrical potential energy) possessed by a unit charge in the electrostatic field at a certain point. However, generally, the potential difference between the potential at a certain point and the reference potential (for example, ground potential) is simply referred to as potential or voltage, and potential and voltage are often used as synonyms. Therefore, in this specification, unless otherwise specified, potential may be read as voltage, or voltage may be read as potential. In addition, voltage refers to the potential difference between two points, and potential refers to the electrostatic energy (electrical potential energy) possessed by a unit charge in the electrostatic field at a certain point. However, generally, the potential difference between the potential at a certain point and the reference potential (for example, ground potential) is simply referred to as potential or voltage, and potential and voltage are often used as synonyms. Therefore, in this specification, unless otherwise specified, potential may be read as voltage, or voltage may be read as potential. In addition, voltage refers to the potential difference between two points, and potential refers to the electrostatic energy (electrical potential energy) possessed by a unit charge in the electrostatic field at a certain point. However, generally, the potential difference between the potential at a certain point and the reference potential (for example, ground potential) is simply referred to as potential or voltage, and potential and voltage are often used as synonyms. Therefore, in this specification, unless otherwise specified, potential may be read as voltage, or voltage may be read as potential. In addition, voltage refers to the potential difference between two points, and potential refers to the electrostatic energy (electrical potential energy) possessed by a unit charge in the electrostatic field at a certain point. However, generally, the potential difference between the potential at a certain point and the reference potential (for example, ground potential) is simply referred to as potential or voltage, and potential and voltage are often used as synonyms. Therefore, in this specification, unless otherwise specified, potential may be read as voltage, or voltage may be read as potential. In addition, voltage refers to the potential difference between two points, and potential refers to the electrostatic energy (electrical potential energy) possessed by a unit charge in the electrostatic field at a certain point. However, generally, the potential difference between the potential at a certain point and the reference potential (for example, ground potential) is simply referred to as potential or voltage, and potential and voltage are often used as synonyms. Therefore, in this specification, unless otherwise specified, potential may be read as voltage, or voltage may be read as potential. In addition, voltage refers to the potential difference between two points, and potential refers to the electrostatic energy (electrical potential energy) possessed by a unit charge in the electrostatic field at a certain point. However, generally, the potential difference between the potential at a certain point and the reference potential (for example, ground potential) is simply referred to as potential or voltage, and potential and voltage are often used as synonyms. Therefore, in this specification, unless otherwise specified, potential may be read as voltage, or voltage may be read as potential.

[0374] In addition, in this specification and the like, voltage often refers to the potential difference between a certain potential and a reference potential (for example, ground potential). Therefore, it is possible to equivalently replace voltage, potential, and potential difference with potential, voltage, and voltage difference respectively. In addition, in this specification and the like, voltage often refers to the potential difference between a certain potential and a reference potential (for example, ground potential). Therefore, it is possible to equivalently replace voltage, potential, and potential difference with potential, voltage, and voltage difference respectively. In addition, in this specification and the like, voltage often refers to the potential difference between a certain potential and a reference potential (for example, ground potential). Therefore, it is possible to equivalently replace voltage, potential, and potential difference with potential, voltage, and voltage difference respectively.

[0375] Generally, potentials and voltages are relative. Therefore, the ground potential is It is not necessarily limited to 0 volts.

[0376] A transistor is a type of semiconductor device that controls the amplification of current and voltage, and conduction or non-conduction. In this specification, the transistor can be , IGFET(Insulated Gate Field Effect Trans istor) and thin film transistor (TFT) ) is included.

[0377] For example, in this specification, a transistor is defined as a transistor having a gate, a drain, and a source. The element has at least three terminals including a drain (drain terminal, drain drain electrode) and source (source terminal, source region or source electrode) A channel region is provided between the drain and the source, and a current flows through the channel region and the source. Here, the source and drain are the same in structure or operation of the transistor. It is difficult to determine which is the source and which is the drain, as this varies depending on the conditions. Therefore, the part that functions as the source and the part that functions as the drain are In some cases, the source and drain are not called the same. One of the two is referred to as a first terminal, a first electrode, or a first region, and the other of the source and drain is referred to as a first electrode. It may also be referred to as the second terminal, the second electrode, or the second region.

[0378] For example, in this specification, it is explicitly stated that X and Y are connected. In this case, X and Y are electrically connected, and X and Y are functionally connected. The case where X and Y are directly connected and the case where they are not are disclosed in this specification and the like. Here, X and Y are assumed to be objects (for example, devices, elements, circuits, wirings, electrodes, terminals, conductive films, layers, etc.). Therefore, it is not limited to a predetermined connection relationship, for example, the connection relationship shown in a figure or text, but also includes those other than the connection relationship shown in the figure or text and is considered to be described in the figure or text.

[0379] As an example of the case where X and Y are directly connected, when an element (for example, a switch, transistor, capacitor element, inductor, resistor element, diode, display element, light-emitting element, load, etc.) that enables electrical connection between X and Y is not connected between X and Y, or when X and Y are connected without passing through an element (for example, a switch, transistor, capacitor element, inductor, resistor element, diode, display element, light-emitting element, load, etc.) that enables electrical connection between X and Y.

[0380] As an example of the case where X and Y are electrically connected, it is possible for one or more elements (for example, a switch, transistor, capacitor element, inductor, resistor element, diode, display element, light-emitting element, load, etc.) that enable electrical connection between X and Y to be connected between X and Y. Note that the switch has a function of controlling on / off. That is, the switch can be in a conductive state (on state) or a non-conductive state (off state) and has a function of controlling whether to allow current to flow or not. Or the switch has a function of selecting and switching the path through which current flows. When X and Y are electrically connected, X This shall include the case where X and Y are directly connected.

[0381] As an example of the case where X and Y are functionally connected, a circuit that enables the functional connection between X and Y (for example, a logic circuit (such as an inverter, NAND circuit, NOR circuit, etc.), a signal conversion circuit (DA conversion circuit, AD conversion circuit, gamma correction circuit, etc.), a potential level conversion circuit (a power supply circuit (boost circuit, buck circuit, etc.), a level shifter circuit that changes the potential level of a signal, etc.) , a voltage source, a current source, a switching circuit, an amplification circuit (a circuit that can increase the signal amplitude or current amount, etc., such as an operational amplifier, a differential amplification circuit, a source follower circuit, a buffer circuit, etc.), a signal generation circuit, a memory circuit, a control circuit, etc.) can be connected by one or more between X and Y. Note that, as an example, even if there is another circuit between X and Y, when the signal output from X is transmitted to Y, it shall be considered that X and Y are functionally connected.

[0382] In addition, when it is explicitly described that X and Y are electrically connected, the case where X and Y are electrically connected (that is, connected with another element or another circuit sandwiched between X and Y) , the case where X and Y are functionally connected (that is, functionally connected with another circuit sandwiched between X and Y) , and the case where X and Y are directly connected (that is, connected without another element or another circuit sandwiched between X and Y) shall be disclosed in this specification and the like. That is, when it is explicitly described that they are electrically connected, it shall be considered that the same content as the case where it is only explicitly described that they are connected is disclosed in this specification and the like.

[0383] ​​For example, when the source (or the first terminal, etc.) of the transistor is electrically connected to X via (or without) Z1, and the drain (or the second terminal, etc.) of the transistor is electrically connected to Y via (or without) Z2, or when the source (or the first terminal, etc.) of the transistor is directly connected to a part of Z1, another part of Z1 is directly connected to X, the drain (or the second terminal, etc.) of the transistor is directly connected to a part of Z2, and another part of Z2 is directly connected to Y, it can be expressed as follows. For example, it can be expressed as "X, Y, the source (or the first terminal, etc.) and the drain (or the second terminal, etc.) of the transistor are electrically connected to each other, and are electrically connected in the order of X, the source (or the first terminal, etc.) of the transistor, the drain (or the second terminal, etc.) of the transistor, Y." Or it can be expressed as "The source (or the first terminal, etc.) of the transistor is electrically connected to X, the drain (or the second terminal, etc.) of the transistor is electrically connected to Y, and X, the source (or the first terminal, etc.) of the transistor, the drain (or the second terminal, etc.) of the transistor, Y are electrically connected in this order." Or it can be expressed as "X is electrically connected to Y via the source (or the first terminal, etc.) and the drain (or the second terminal, etc.) of the transistor, and X, the source (or the first terminal, etc.) of the transistor, the drain (or the second terminal, etc.) of the transistor, Y are provided in this connection order." By stipulating the connection order in the circuit configuration using an expression method similar to these examples, the transistor via (or without) Z2, or when the source (or the first terminal, etc.) of the transistor is directly connected to a part of Z1, another part of Z1 is directly connected to X directly , the drain (or the second terminal, etc.) of the transistor is directly connected to a part of Z2 directly , and another part of Z2 is directly connected to Y, it can be expressed as follows .

[0384] For example, it can be expressed as "X, Y, the source (or the first terminal, etc.) and the drain (or the second terminal, etc.) of the transistor are electrically connected to each other, and are electrically connected in the order of X, the source (or the first terminal, etc.) of the transistor, the drain (or the second terminal, etc.) of the transistor, Y." Or it can be expressed as "The source (or the first terminal, etc.) of the transistor is electrically connected to X, the drain (or the second terminal, etc.) of the transistor is electrically connected to Y, and X, the source (or the first terminal, etc.) of the transistor, the drain (or the second terminal, etc.) of the transistor, Y are electrically connected in this order." Or it can be expressed as "X is electrically connected to Y via the source (or the first terminal, etc.) and the drain (or the second terminal, etc.) of the transistor, and X, the source (or the first terminal, etc.) of the transistor, the drain (or the second terminal, etc.) of the transistor, Y are provided in this connection order." By stipulating the connection order in the circuit configuration using an expression method similar to these examples, the transistor are electrically connected to each other, and X, the source (or the first terminal, etc.) of the transistor, the drain (or the second terminal, etc.) of the transistor, Y are electrically connected in this order.」Or, 「The source (or the first terminal, etc.) of the transistor is electrically connected to X, the drain (or the second terminal, etc.) of the transistor is electrically connected to Y, and X, the source (or the first terminal, etc.) of the transistor, the drain (or the second terminal, etc.) of the transistor, Y are electrically connected in this order.」Or, 「X is electrically connected to Y via the source (or the first terminal, etc.) and the drain (or the second terminal, etc.) of the transistor, and X, the source (or the first terminal, etc.) of the transistor, the drain (or the second terminal, etc.) of the transistor, Y are provided in this connection order.」Using an expression method similar to these examples, by stipulating the connection order in the circuit configuration, the transistor (or the first terminal, etc.) and the drain (or the second terminal, etc.) of the transistor, and X, the source (or the first terminal, etc.) of the transistor, the drain (or the second terminal, etc.) of the transistor, Y are provided in this connection order.」By stipulating the connection order in the circuit configuration using an expression method similar to these examples, the source (or the first terminal, etc.) of the transistor, the drain (or the second terminal, etc.) of the transistor, Y are provided in this connection order.」Using an expression method similar to these examples, by stipulating the connection order in the circuit configuration, the transistor connection order in the circuit configuration can be specified, and for the transistor Distinguish the source (or the first terminal, etc.) of the transistor from the drain (or the second terminal, etc.) so that the technical scope can be determined.

[0385] Or, as another expression method, for example, "the source of the transistor (or the first terminal, etc.) is electrically connected to X via at least a first connection path, and the first connection path does not have a second connection path, and the second connection path is a path between the source (or the first terminal, etc.) of the transistor and the drain (or the second terminal, etc.) of the transistor via the transistor, and the first connection path is a path via Z1, and the drain (or the second terminal, etc.) of the transistor is electrically connected to Y via at least a third connection path, and the third connection path does not have the second connection path, and the third connection path is a path via Z2." It can be expressed as. Or, "the source of the transistor (or the first terminal, etc.) is electrically connected to X via Z1 via at least a first connection path, and the first connection path does not have a second connection path, and the second connection path has a connection path via the transistor, and the drain of the transistor (or the second terminal, etc.) is electrically connected to Y via Z2 via at least a third connection path, and the third connection path does not have the second connection path." It can be expressed as Or, "the source of the transistor (or the first terminal, etc.) is electrically connected to X via Z1 by at least a first electrical path, and the first electrical path does not have a second electrical path, and the second electrical path is from the source (or the first terminal, etc.) of the transistor to the drain (or the second terminal, etc.) of the transistor " It can be expressed as. Or, "the source of the transistor (or the first terminal, etc.) is electrically connected to X via Z1 by at least a first electrical path, and the first electrical path does not have a second electrical path, and the second electrical path has a connection path via the transistor, and the drain of the transistor (or the second terminal, etc.) is electrically connected to Y via Z2 by at least a third electrical path, and the third electrical path does not have the second electrical path." It can be expressed as Or, "the source of the transistor (or the first terminal, etc.) is electrically connected to X via Z1 by at least a first electrical path, and the first electrical path does not have a second electrical path, and the second electrical path has a connection path via the transistor, and the drain of the transistor (or the second terminal, etc.) is electrically connected to Y via Z2 by at least a third electrical path, and the third electrical path does not have the second electrical path." It can be expressed as Or, "the source of the transistor (or the first terminal, etc.) is electrically connected to X via Z1 by at least a first electrical path, and the first electrical path does not have a second electrical path, and the second electrical path is from the source of the transistor (or the first terminal, etc.) to the drain (or the second terminal, etc.) of the transistor an electrical path, and the drain of the transistor (or the second terminal, etc.) is electrically connected to Y via Z2 by at least a third electrical path, and the third electrical path does not have a fourth electrical path, and the fourth electrical path is an electrical path from the drain of the transistor (or the second terminal, etc.) to the source of the transistor (or the first terminal, etc.).」 It can be expressed as. Using the same expression method as these examples, by defining the connection path in the circuit configuration , it is possible to distinguish between the source of the transistor (or the first terminal etc.) and the drain (or the second terminal, etc.) and determine the technical scope. is possible.

[0386] Note that these expression methods are just examples and are not limited to these expression methods. Here, X , Y, Z1, and Z2 are assumed to be objects (for example, devices, elements, circuits, wirings, electrodes, terminals, conductive films, layers, etc.).

[0387] Note that even when components that are independent on the circuit diagram are shown as being electrically connected, there may be a case where one component has the functions of a plurality of components. For example, when a part of the wiring also functions as an electrode, one conductive film has the functions of both a wiring and an electrode. Therefore, the electrical connection in this specification includes such a case where one conductive film has the functions of a plurality of components within its scope. is also included in the category.

[0388] For example, in this specification, etc., when it is explicitly described that Y is formed on X, or Y is formed on X, it means that Y is formed in direct contact with X on X​​ is not limited to. When not in direct contact, that is, when another object intervenes between X and Y shall also be included. Here, X and Y are assumed to be objects (for example, devices, elements, circuits, wirings, electrodes, terminals, conductive films, layers, etc.).

[0389] Therefore, for example, when it is explicitly described that layer Y is formed on (or over) layer X it shall include both the case where layer Y is formed directly in contact with layer X and the case where another layer (for example, layer Z, etc.) is formed directly in contact with layer X and layer Y is formed directly in contact with that layer. Note that another layer (for example, layer Z, etc.) may be a single layer or a multi-layer (laminated layer).

[0390] Furthermore, the same applies to the case where it is explicitly described that Y is formed above X. It is not limited to the case where Y is directly in contact with X and shall also include the case where another object intervenes between X and Y. Therefore, for example, when it is described that layer Y is formed above layer X it shall include both the case where layer Y is formed directly in contact with layer X and the case where another layer (for example, layer Z, etc.) is formed directly in contact with layer X and layer Y is formed directly in contact with that layer. Note that another layer (for example, layer Z, etc.) may be a single layer or a multi-layer (laminated layer).

[0391] In addition, when it is explicitly described that Y is formed on X, Y is formed over X, or Y is formed above X, the case where Y is formed obliquely above X shall also be included

[0392] In addition, the same applies to the case where Y is under X or Y is below X.​​​​​

[0393] For example, in this specification and the like, terms such as "above", "upward", "below", "downward", "sideways" "right", "left", "diagonally", "back", "front", "inside", "outside", or "in" that indicate spatial arrangements are often used to simply show the relationship between one element or feature and another element or feature by means of a diagram. However, it is not limited to this, and these terms indicating spatial arrangements can include other directions in addition to the directions depicted in the diagram and are possible. For example, when explicitly shown as Y above X, it is not limited to Y being above X. Since the device in the diagram can be inverted or rotated 180°, it is possible to include Y being below X. Thus, the term "above" can include the direction of "below" in addition to the direction of "above". However, it is not limited to this. Since the device in the diagram can be rotated in various directions, the term "above" can include other directions such as "sideways", "right", "left", "diagonally", "back", "front", "inside", "outside", or "in" in addition to the directions of "above" and "below". Therefore, it can be appropriately interpreted according to the situation. For example, when explicitly shown as Y above X, it is not limited to Y being above X. Since the device in the diagram can be inverted or rotated 180°, it is possible to include Y being below X. Thus, the term "above" can include the direction of "below" in addition to the direction of "above". However, it is not limited to this. Since the device in the diagram can be rotated in various directions, the term "above" can include other directions such as "sideways", "right", "left", "diagonally", "back", "front", "inside", "outside", or "in" in addition to the directions of "above" and "below". Therefore, it can be appropriately interpreted according to the situation. and are possible. For example, when explicitly shown as Y above X, it is not limited to Y being above X. Since the device in the diagram can be inverted or rotated 180°, it is possible to include Y being below X. Thus, the term "above" can include the direction of "below" in addition to the direction of "above". However, it is not limited to this. Since the device in the diagram can be rotated in various directions, the term "above" can include other directions such as "sideways", "right", "left", "diagonally", "back", "front", "inside", "outside", or "in" in addition to the directions of "above" and "below". Therefore, it can be appropriately interpreted according to the situation. and are possible. For example, when explicitly shown as Y above X, it is not limited to Y being above X. Since the device in the diagram can be inverted or rotated 180°, it is possible to include Y being below X. Thus, the term "above" can include the direction of "below" in addition to the direction of "above". However, it is not limited to this. Since the device in the diagram can be rotated in various directions, the term "above" can include other directions such as "sideways", "right", "left", "diagonally", "back", "front", "inside", "outside", or "in" in addition to the directions of "above" and "below". Therefore, it can be appropriately interpreted according to the situation. and are possible. For example, when explicitly shown as Y above X, it is not limited to Y being above X. Since the device in the diagram can be inverted or rotated 180°, it is possible to include Y being below X. Thus, the term "above" can include the direction of "below" in addition to the direction of "above". However, it is not limited to this. Since the device in the diagram can be rotated in various directions, the term "above" can include other directions such as "sideways", "right", "left", "diagonally", "back", "front", "inside", "outside", or "in" in addition to the directions of "above" and "below". Therefore, it can be appropriately interpreted according to the situation. and are possible. For example, when explicitly shown as Y above X, it is not limited to Y being above X. Since the device in the diagram can be inverted or rotated 180°, it is possible to include Y being below X. Thus, the term "above" can include the direction of "below" in addition to the direction of "above". However, it is not limited to this. Since the device in the diagram can be rotated in various directions, the term "above" can include other directions such as "sideways", "right", "left", "diagonally", "back", "front", "inside", "outside", or "in" in addition to the directions of "above" and "below". Therefore, it can be appropriately interpreted according to the situation. and are possible. For example, when explicitly shown as Y above X, it is not limited to Y being above X. Since the device in the diagram can be inverted or rotated 180°, it is possible to include Y being below X. Thus, the term "above" can include the direction of "below" in addition to the direction of "above". However, it is not limited to this. Since the device in the diagram can be rotated in various directions, the term "above" can include other directions such as "sideways", "right", "left", "diagonally", "back", "front", "inside", "outside", or "in" in addition to the directions of "above" and "below". Therefore, it can be appropriately interpreted according to the situation. and are possible. For example, when explicitly shown as Y above X, it is not limited to Y being above X. Since the device in the diagram can be inverted or rotated 180°, it is possible to include Y being below X. Thus, the term "above" can include the direction of "below" in addition to the direction of "above". However, it is not limited to this. Since the device in the diagram can be rotated in various directions, the term "above" can include other directions such as "sideways", "right", "left", "diagonally", "back", "front", "inside", "outside", or "in" in addition to the directions of "above" and "below". Therefore, it can be appropriately interpreted according to the situation. In other words, it can be appropriately interpreted according to the situation.

[0394] This embodiment corresponds to a modification, addition, correction, deletion, application, generalization, or specialization of part or all of other embodiments. Therefore, part or all of this embodiment can be freely combined with, applied to, or replaced by part or all of other embodiments and implemented. This embodiment corresponds to a modification, addition, correction, deletion, application, generalization, or specialization of part or all of other embodiments. Therefore, part or all of this embodiment can be freely combined with, applied to, or replaced by part or all of other embodiments and implemented. This embodiment corresponds to a modification, addition, correction, deletion, application, generalization, or specialization of part or all of other embodiments. Therefore, part or all of this embodiment can be freely combined with, applied to, or replaced by part or all of other embodiments and implemented. This embodiment corresponds to a modification, addition, correction, deletion, application, generalization, or specialization of part or all of other embodiments. Therefore, part or all of this embodiment can be freely combined with, applied to, or replaced by part or all of other embodiments and implemented.

Explanation of Reference Numerals

[0395] 10 Electron gun chamber 12 Optical system 14 Sample chamber 16 Optical system 18 Camera 20 Observation room 22 Film chamber 24 Electronics 28 Substance 32 Fluorescent plate 101 Electronic device 101A Electronic device 102 Display device 102A Display device 102B Display device 103 Camera section 104 Region 105 Subject 106 Region 106A Region 106B Region 107A Illumination light 107B Reflected light 107C Illumination light 107D Illumination light 108A Slider 108AA Button 108B Blue slider 108BA Blue button 108C Green slider 108CA Green button 108D Red slider 108DA Red button 109 Region 110 Call partner 111 Contact object 112A Icon 112B Icon 112C Icon 112D Icon 113 Illumination member 114 Button 115A Icon 115B Icon 116 Network 117 Server 118 Computer 130 Step 131 steps 132 steps 133 steps 134 steps 135 steps 136 steps 137 steps 201 CPU 203 storage device 205 storage device 207 controller 209 display device 211 external port 213 network control unit 215 antenna 217 camera unit 300 touch panel 301 display unit 302 pixel 302B sub-pixel 302G sub-pixel 302R sub-pixel 302t transistor 303c capacitance 303g(1) scanning line drive circuit 303g(2) imaging pixel drive circuit 303s(1) image signal line drive circuit 303s(2) imaging signal line drive circuit 303t transistor 308 imaging pixel 308p photoelectric conversion element 308t transistor 309 FPC 310 substrate 310a barrier film 310b substrate 310c adhesive layer 311 wiring 319 terminal 321 insulating film 328 partition wall 329 spacer 350R light-emitting element 351R lower electrode 352 upper electrode 353 layers 353a light-emitting unit 353b light-emitting unit 354 intermediate layer 360 sealing material 367BM light-shielding layer 367p antireflection layer 367R coloring layer 370 counter substrate 370a barrier film 370b substrate 370c adhesive layer 380B light-emitting module 380G light-emitting module 380R light-emitting module 400 substrate 401 pixel portion 402 scanning line drive circuit 403 scanning line drive circuit 404 signal line drive circuit 410 capacitance wiring 412 gate wiring 413 gate wiring 414 drain electrode layer 416 transistor 417 transistor 418 liquid crystal element 419 liquid crystal element 420 pixel 421 switching transistor 422 driving transistor 423 capacitance element 424 light-emitting element 425 signal line 426 scanning line 427 power line 428 common electrode 500 touch panel 500B touch panel 501 display portion 502R sub-pixel 502t transistor 503c capacitance 503g scanning line drive circuit 503t transistor 509 FPC 510 Substrate 510a Barrier film 510b Substrate 510c Adhesive layer 511 Wiring 519 Terminal 521 Insulating film 528 Partition wall 550R Light-emitting element 560 Encapsulant 567BM Light-shielding layer 567p Antireflection layer 567R Coloring layer 570 Substrate 570a Barrier film 570b Substrate 570c Adhesive layer 580R Light-emitting module 590 Substrate 591 Electrode 592 Electrode 593 Insulating layer 594 Wiring 595 Touch sensor 597 Adhesive layer 598 Wiring 599 Connection layer 8000 Display module 8001 Upper cover 8002 Lower cover 8003 FPC 8004 Touch panel 8005 FPC 8006 Display panel 8007 Backlight unit 8008 Light source 8009 Frame 8010 Printed circuit board 8011 Battery

Claims

1. An electronic device having a display device and a camera unit provided on the same surface side, wherein the display device has a function of simultaneously displaying at least a first area having a function as illumination for illuminating a subject and a second area for displaying an image of the subject obtained from the camera unit in real time; when the ambient environmental light is strong and bright, the display device has a function of displaying at least the second area and not displaying the first area; wherein a plurality of icons are arranged inside the first area, and at least one of the plurality of icons is a photographing execution button.

2. An electronic device having a display device and a camera unit provided on the same surface side, wherein the display device has a function of simultaneously displaying at least a first area having a function as illumination for illuminating a subject and a second area for displaying an image of the subject obtained from the camera unit in real time; when the camera unit is in an upper position when viewed from the surface side where the display device and the camera unit are provided, when the camera unit is changed from the upper position to the left position by rotating the electronic device counterclockwise and when the camera unit is changed from the upper position to the right position by rotating the electronic device clockwise, the second area is arranged closer to the camera unit than the first area; wherein a plurality of icons are arranged inside the first area, and at least one of the plurality of icons is a photographing execution button.

3. An electronic device having a display device and a camera unit provided on the same surface side, wherein the display device has a function of simultaneously displaying at least a first area having a function as illumination for illuminating a subject and a second area for displaying an image of the subject obtained from the camera unit in real time; when the ambient environmental light is strong and bright, the display device has a function of displaying at least the second area and not displaying the first area; wherein the second area is arranged closer to the camera unit than the first area. Inside the first area, a plurality of icons are arranged, and at least one of the plurality of icons is a shooting execution button, an electronic device.

4. An electronic device having a display device and a camera unit provided on the same surface side, The display device has a function of simultaneously displaying at least a first area having a function as illumination for illuminating a subject and a second area for displaying an image of the subject obtained from the camera unit in real time, When the ambient environmental light is strong and bright, the display device has a function of displaying at least the second area and not displaying the first area on the display device, When the camera unit is in an upper position when viewing the display device and the camera unit from the surface side where the display device and the camera unit are provided, when the camera unit is rotated left to change the state from the upper position to the left position and when the camera unit is rotated right to change the state from the upper position to the right position, in either case, the second area is arranged closer to the camera unit than the first area, Inside the first area, a plurality of icons are arranged, and at least one of the plurality of icons is a shooting execution button, an electronic device.

5. In any one of Claims 1 to 4, The second area is not surrounded by the first area, an electronic device.

6. In any one of Claims 1 to 5, In the first area, the image of the subject obtained from the camera unit is not displayed, an electronic device.

7. In any one of Claims 1 to 6, An electronic device having a function of being able to change the position of the second area.

8. In any one of Claims 1 to 6, An electronic device having a function of being able to change the position of the second area, and after the position of the second area is changed, the first area is arranged closer to the camera unit than the second area.

9. In any one of Claims 1 to 8, Having a storage device, An electronic device having a function of storing data of the image of the subject obtained from the camera unit in the storage device.

10. In any one of Claims 1 to 9, The display device is an active matrix display device, which is an electronic device having an organic EL element in a pixel. **Claim 11** In any one of Claims 1 to 9, The display device is an electronic device having a flexible light-emitting panel.

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