Electronic device, method of manufacturing same and method of using same

Abstract

To provide an electronic device capable of eliminating a need for an external magnetic field, being available for a random number generation element or a memory element that can output relatively large reading signals and also available for an oscillation / detection element with variability of an output / input frequency.SOLUTION: An electronic device comprises a main body, an input terminal, and an output terminal. The main body is configured by laminating on a substrate a spin torque generation layer and a non-collinear antiferromagnetic layer in a lamination direction of this order or a reverse order. The input terminal is arranged at both ends in an arbitrary one direction parallel to a lamination plane of the spin torque generation layer. The non-collinear antiferromagnetic layer has a non-collinear magnetic order in a plane made by the arbitrary one direction and the lamination direction.SELECTED DRAWING: Figure 1

Description

[Technical Field]

[0001] The present invention relates to electronic devices, methods for making and using same. [Background technology]

[0002] Classically, magnetic order in magnetic materials is controlled by a magnetic field, but in recent years, with the development of spintronics technology, which simultaneously utilizes the electric (charge) and magnetic (spin) properties of electrons, various attempts have been made to control the magnetic order in magnetic materials by electric current. This phenomenon is brought about by the exchange of angular momentum between the magnetic moment that constitutes the magnetic order and the spin of conduction electrons, and the torque that acts on the magnetic order when an electric current is introduced is called spin-transfer torque (STT), or simply spin torque.

[0003] Non-Patent Document 1 reported the first experimental results on the reversal of the magnetic order, i.e., the magnetization direction, of a ferromagnetic material due to spin transfer torque. This phenomenon is called spin transfer torque induced magnetization reversal. Spin transfer torque magnetization reversal can be used as a method for writing information to magnetoresistive random access memory (MRAM). This technology has begun to be put into practical use as STT-MRAM.

[0004] Subsequently, Non-Patent Document 2 reported that a steady (DC) spin transfer torque can induce oscillations in the magnetization of a ferromagnetic material at a constant period. This phenomenon is called spin-torque oscillation. It is characterized by the output of an AC voltage when a DC current is introduced.

[0005] It is known that this spin torque oscillation phenomenon causes multiple ferromagnetic materials on which spin transfer torque acts to vibrate in phase (synchronization) when they are close to each other or electrically connected, and outputs an AC voltage with a larger amplitude in a narrower frequency range. Non-Patent Document 3 reports the experimental results. In general, the ratio of the output amplitude intensity to the half-width of the oscillation frequency in an oscillator or oscillator circuit is called the Q value, and synchronization increases this Q value, thereby improving the performance of the oscillator.

[0006] It is also known that, as an inverse effect of spin torque oscillation, when a spin transfer torque that oscillates at a constant frequency is applied to the magnetization of a ferromagnetic material, the magnetization of the ferromagnetic material resonates and moves at a certain frequency, resulting in the output of a DC voltage. Non-Patent Document 4 reports the experimental results. This phenomenon is called spin-torque ferromagnetic resonance. It is characterized by the output of a DC voltage when an AC current is introduced.

[0007] Phenomena such as spin torque oscillation and its synchronization, as well as spin torque ferromagnetic resonance, are expected to be applied to communication technologies such as electromagnetic wave transmission and reception, radar, non-destructive testing, clocks for electronic circuits, microwave-assisted magnetic recording in hard disk drives, energy harvesting, brain-like computers, etc. These technologies have the advantage of being able to achieve the same functions in a smaller area than existing technologies and can be manufactured at low cost.

[0008] Additionally, random number generators that utilize the spin torque magnetization reversal probability of the magnetization of ferromagnetic materials and thermal fluctuations have also been proposed and are currently being researched and developed. The output random numbers are true physical random numbers, making them unpredictable, and they have the advantage of being able to be realized using minute elements. In addition to security technologies, as shown in Non-Patent Document 5, the possibility of applying these technologies to non-traditional computing technologies has also been demonstrated in recent years, and research and development is currently being conducted on these technologies.

[0009] Magnetic materials with magnetic order include ferromagnets, in which spins are aligned parallel (or aligned with a parallel component) and spontaneously exhibit a net magnetization, as well as antiferromagnets, in which adjacent spins are aligned in directions that cancel each other out and therefore have no net magnetization. These antiferromagnets can be further classified into collinear antiferromagnets, in which adjacent spins are aligned in antiparallel directions and therefore have a net magnetization of zero, and non-collinear antiferromagnets, in which three or more adjacent spins are aligned non-collinearly and therefore have a net magnetization of zero (or almost zero).

[0010] It has been previously recognized that it is difficult to control the electrical magnetic order based on the law of conservation of angular momentum in antiferromagnets because they do not have a net (macro) magnetization. However, in Non-Patent Document 6, it was shown that the magnetic order (Néel vector) of a collinear antiferromagnet can be rotated by 90 degrees by using spin-orbit torque, which is a spin transfer torque that appears due to quantum relativistic effects.

[0011] Subsequently, Non-Patent Document 7 showed that the magnetic moment of each sublattice of a non-collinear antiferromagnet can be flipped by 180 degrees using spin-orbit torque. However, the current control of the magnetic order of a non-collinear antiferromagnet shown in Non-Patent Document 7 is actually a device structure and control of the device that is designed to achieve the same mechanism as current control of the magnetic order of a ferromagnet, and does not utilize the unique behavior of a non-collinear antiferromagnet. In addition, the current control shown in Non-Patent Document 7 is based on the assumption that the device is in the presence of a steady magnetic field, for reasons not discussed here. [Prior art documents] [Non-patent literature]

[0012] [Non-Patent Document 1] http: / / dx.doi.org / 10.1037 / 0033-295X.103.2.202 Myers, DC, Ralph, JA, Katine, RN, Louie, and RA, Buhrman, “Current-Induced Switching of Domains in Magnetic Multilayer Devices,” Science, vol. 285, pp. 101-1 867–870 (1999).

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[0013] As mentioned above, there are various types of current control of the magnetic order in magnetic materials, and memory elements, random number generators, oscillators, detectors, etc. that utilize these have been proposed, demonstrated, and some have been put to practical use. However, these existing technologies have several issues. First, all ferromagnetic elements have macroscopic magnetization, which causes their characteristics to change in response to external magnetic fields, resulting in issues with resistance to magnetic field noise. In addition, the frequency of the AC voltage output by spin torque oscillation using a ferromagnetic material and the frequency of the input AC current at which resonance occurs in spin torque ferromagnetic resonance are fixed by the magnetic properties of the ferromagnetic material and the externally applied magnetic field. In other words, the only way to variably control the frequency is to control the external magnetic field, but this inevitably increases manufacturing costs and size due to the need to install a mechanism to apply the external magnetic field, and it is difficult to control the frequency according to the required specifications. This means that there is essentially no frequency variability. Furthermore, spin torque oscillation in ferromagnetic materials (Non-Patent Document 2), spin torque ferromagnetic resonance (Non-Patent Document 4), and magnetic moment reversal in non-collinear antiferromagnetic materials (Non-Patent Document 7) all require the application of a steady external magnetic field for stable operation, which is not desirable in practice. On the other hand, the rotation of the Néel vector of a collinear antiferromagnet (Non-Patent Document 6) does not require an external magnetic field, but the change in the conduction characteristics depending on the state is small, and there is a problem in terms of generating a sufficient output signal.

[0014] In view of the above-mentioned problems, the present invention aims to provide an electronic device that does not require an external magnetic field, can be used as a random number generating element or memory element capable of outputting a relatively large readout signal, and can also be used as an oscillation / detection element with variability in output / input frequency. [Means for solving the problem]

[0015] The electronic device of the present invention has at least the following configuration. The device comprises a main body, an input terminal, and an output terminal, the main body being configured by stacking a spin torque generation layer and a non-collinear antiferromagnetic layer on a substrate in this order or in the reverse order, the input terminals being disposed on both ends of an arbitrary direction parallel to the stacking plane of the spin torque generation layer, and the non-collinear antiferromagnetic layer having a non-collinear magnetic order in a plane formed by the arbitrary direction and the stacking direction. and utilizes the spin torque acting on the non-collinear antiferromagnetic layer. It is characterized by: The electronic device of the present invention has at least the following configuration. a main body, a first terminal, and a second terminal, the main body being configured by stacking a spin torque generation layer, an intermediate layer, and a non-collinear antiferromagnetic layer in this order or in reverse order, the spin torque generation layer having a substantially fixed magnetic structure and a magnetization direction defined as the direction of its effective magnetization, the intermediate layer being made of a non-magnetic material, and the non-collinear antiferromagnetic layer having a non-collinear magnetic order in a plane perpendicular to the magnetization direction; and utilizes a spin torque acting on the non-collinear antiferromagnetic layer, The spin torque generation layer is characterized in that the surface opposite the intermediate layer is connected to the first terminal, and the non-collinear antiferromagnetic layer is characterized in that the surface opposite the intermediate layer is connected to the second terminal. As will be described in detail later, these electronic device inventions can be said to be a group of inventions that are closely related technically and have corresponding special technical features, in that they utilize the dynamics of the chiral spin structure, which is a unique behavior of non-collinear antiferromagnets. The method for manufacturing an electronic device of the present invention comprises at least the following steps. The method comprises the steps of placing a substrate on a stage, depositing a spin torque generation layer on the substrate, depositing a non-collinear antiferromagnetic layer while the surface of the stage is maintained at 300 degrees or higher, performing heat treatment to heat the substrate to 300 degrees or higher, and performing microfabrication. Furthermore, a method for using an electronic device according to the present invention comprises at least the following steps. It is characterized by being used as an oscillator element when a direct current is introduced between the input terminals, as a detector element when an alternating current is introduced between the input terminals, as a random number generator element when a pulse current with a pulse width of 10 nanoseconds or more is input between the input terminals, or as a memory element when a pulse current with a pulse width of 0.1 nanoseconds or more and 2 nanoseconds or less is input between the input terminals. [Effects of the Invention]

[0016] The electronic device according to the present invention operates in the absence of a magnetic field, thereby resolving the problems associated with conventional oscillators, detectors, random number generators, and memory devices that use ferromagnetic materials, collinear antiferromagnetic materials, and non-collinear antiferromagnetic materials.Furthermore, the characteristics of the electronic device according to the present invention do not easily change in response to an external magnetic field, thereby resolving the problems associated with conventional oscillators, detectors, random number generators, and memory devices that use ferromagnetic materials and non-collinear antiferromagnetic materials. Furthermore, when the electronic device according to the present invention is used as an oscillator, it is possible to modulate the frequency of the AC signal to be output, thereby solving the problems that existed with oscillators using conventional ferromagnetic materials. Furthermore, when the electronic device according to the present invention is used as a detection element, it is possible to modulate the frequency of the AC signal that can be detected, thereby solving the problems that existed with detection elements that use conventional ferromagnetic materials. [Brief explanation of the drawings]

[0017] [Figure 1] 1 is a schematic diagram showing a first embodiment (basic structure) of an electronic device according to the present invention. [Figure 2] FIG. 2 is a schematic diagram for explaining the names of crystal planes of a hexagonal material. [Figure 3] D019- This is a schematic diagram to explain the kagome lattice formed on the C-plane of Mn3Sn and the chiral spin structure formed there. [Figure 4] 1 is a schematic diagram for explaining the operating principle of an electronic device according to the present invention. [Figure 5]1A and 1B are schematic diagrams illustrating a method of using the electronic device according to the present invention as an oscillation element. [Figure 6] 1A and 1B are schematic diagrams illustrating a method of using the electronic device according to the present invention as a wave detection element. [Figure 7] 1 is a schematic diagram illustrating a method for using an electronic device according to the present invention as a random number generating element. [Figure 8] 1 is a schematic diagram illustrating a method for using an electronic device according to the present invention as a memory element. [Figure 9] FIG. 2 is an explanatory diagram of the characteristics (numerical simulation) of the first embodiment. [Figure 10] FIG. 4 is an explanatory diagram of the characteristics (experimental results) of the first embodiment. [Figure 11] FIG. 4 is a schematic diagram illustrating the structure of a second embodiment of the present invention. [Figure 12] FIG. 10 is a schematic diagram illustrating the structure of a third embodiment of the present invention. [Figure 13] FIG. 10 is a schematic diagram illustrating the structure of a fourth embodiment of the present invention. [Figure 14] FIG. 10 is a schematic diagram illustrating the structure of a fifth embodiment of the present invention. [Figure 15] FIG. 10 is a schematic diagram illustrating the structure of a sixth embodiment of the present invention. DETAILED DESCRIPTION OF THE INVENTION

[0018] Hereinafter, an electronic device according to the present invention will be described with reference to the drawings. Note that the drawings are conceptual diagrams created for the purpose of explanation, and do not necessarily represent actual embodiments that will be implemented.

[0019] (First Example: Basic Structure of Electronic Device) Figure 1 shows a schematic diagram of the basic structure of an electronic device 1 according to the present invention, which can be considered a first embodiment. (A) is a perspective view, (B) is a plan view, and (C) is a cross-sectional view. The following explanation will be made using the X, Y, and Z orthogonal coordinate axes shown in Figure 1. The Z axis is perpendicular to the substrate, and the X and Y axes are within the substrate plane.

[0020] The electronic device 1 according to the present invention includes at least a spin torque generation layer 11 and a non-collinear antiferromagnetic layer 12. The spin torque generation layer 11 and the non-collinear antiferromagnetic layer 12 are stacked in the Z-axis direction. Although the spin torque generation layer 11 is disposed on the lower side, i.e., the substrate side, in FIG. 1 , this order may be reversed. Although the spin torque generation layer 11 and the non-collinear antiferromagnetic layer 12 are disposed adjacent to each other in FIG. 1 , they do not necessarily have to be adjacent to each other. As long as the technical concept of the present invention is not impaired, another layer, such as an adjustment layer, may be inserted between them to adjust the operating characteristics.

[0021] In FIG. 1, the spin torque generation layer 11 has a shape that extends in a first direction at least in the substrate plane, and both ends thereof are connected to a first input terminal Tx1 and a second input terminal Tx2. Note that in FIG. 1, the first direction is the X direction. In the embodiment shown in FIG. 1, the spin torque generation layer 11 is patterned in a cross shape, and both ends in the Y direction are connected to a first output terminal Ty1 and a second output terminal Ty2. Note that, as will be described later, a pair of positive and negative output signals are generated from the first output terminal Ty1 and the second output terminal Ty2, and therefore, these terminals are preferably connected to a differential amplifier outside the element.

[0022] In the embodiment shown in FIG. 1 , a non-collinear antiferromagnetic layer 12 is provided at the intersection of the cross-shaped patterned spin torque generation layer 11. The non-collinear antiferromagnetic layer 12 has a cylindrical shape. The width W of the spin torque generation layer 11 is preferably 20 nm to 400 nm, and the length L is preferably 60 nm to 1000 nm. The diameter D of the non-collinear antiferromagnetic layer 12 is preferably 20 nm to 500 nm, more preferably 20 nm to 200 nm. The difference between W and D is preferably 50 nm or less. The physical factors that determine the preferred design range for D will be described later. In FIG. 1 , the planar shape of the non-collinear antiferromagnetic layer 12 is circular, but this is not necessarily the case in practice. For example, the planar shape may be square. If it is square, the preferred design range for the length of one side is the same as the preferred design range for D described above.

[0023] Although not shown in Figure 1, an underlayer, seed layer, or buffer layer may be provided below the stacked structure to control the crystal orientation of the spin torque generation layer 11 or the non-collinear antiferromagnetic layer 12 or to improve adhesion to the substrate. A cap layer may also be provided above the stacked structure to protect the materials during the microfabrication process. In the embodiment shown in Figure 1, the spin torque generation layer 11 extends in a cross shape to clearly show the input and output terminals. However, the spin torque generation layer 11 may extend within the same extent as the non-collinear antiferromagnetic layer 12. This can be understood more fully in terms of the relationship between the plane in which magnetic order is formed and the direction of current flow, as will be discussed later.

[0024] (The magnetic order to be set and the material of the non-collinear antiferromagnetic layer to give it) Next, materials used for the spin torque generation layer 11 and the non-collinear antiferromagnetic layer 12 in the embodiment shown in FIG. 1 will be described. First, materials that can be used for the non-collinear antiferromagnetic layer 12 will be described. The non-collinear antiferromagnetic layer 12 is made of a material having a non-collinear magnetic order. A representative example is D0 19Examples of non-collinear antiferromagnetic materials include Mn3Sn and Mn3Ge alloys with an ordered structure, and Mn3Ir and Mn3Pt alloys with an L21 ordered structure. As will be described later, these materials have a kagome lattice, and non-collinear magnetic order is formed on the kagome planes.

[0025] In the embodiment shown in FIG. 1, the non-collinear antiferromagnetic layer 12 must have a non-collinear magnetic order in the plane formed by the stacking direction, i.e., the Z direction, and the first direction, i.e., the XZ plane. As an example, D0 19 This will be explained in detail using Mn3Sn as an example. 19 An ordered structure is a hexagonal crystal structure in which the elements occupying each site are fixed, as shown in Figure 2. The faces of a hexagonal crystal are sometimes called the C-face in the three-axis notation, the A-face in the (110) face, and the M-face in the (100) face, and Figure 2 shows the relationship between the three. Furthermore, Figure 2 also shows the faces represented by the C-face, A-face, and M-face in the four-axis notation. D0 19 In -Mn3Sn, the C-plane becomes a Kagome plane, where a chiral spin structure, which is a non-collinear magnetic order, is formed. 19 When -Mn3Sn is used in the non-collinear antiferromagnetic layer 12, the C-axis must have a component perpendicular to the XZ plane, and preferably be perpendicular to it. Note that such an orientation does not need to be realized in the entire region of the non-collinear antiferromagnetic layer 12, as long as the preferential orientation satisfies the above-mentioned conditions.

[0026] Figure 3 shows D0 19The figure shows specific chiral spin structures that can be assumed in the kagome lattice of Mn3Sn. In the figure, the thick open arrows and the thick filled arrows represent the stable directions of the magnetic moments of Mn atoms located in different layers, respectively. The thin arrows represent the directions of the minute magnetizations (weakly ferromagnetic magnetization vectors) observed in such magnetically ordered states. In the bulk, i.e., in a state with sufficient length in all three-dimensional directions, the six states shown in Figure 3 (A) to (F) are energetically degenerate. Furthermore, Mn3AN (A = Ga, Ni-Cu) and other materials are known to form non-collinear magnetic order at room temperature and can be used for the non-collinear antiferromagnetic layer 12. Strictly speaking, the magnetic order of the non-collinear antiferromagnetic layer 12 does not necessarily have to be non-collinear; the present invention is applicable to any material whose electrical conduction characteristics change significantly depending on the magnetic order. A specific example is RuO2. While RuO2 has collinear magnetic order, its symmetry is broken by its crystalline structure, resulting in the Hall effect (crystalline Hall effect).

[0027] (Spin torque generation layer material) Next, materials that can be used for the spin torque generation layer 11 will be described. In the embodiment shown in FIG. 1 , the spin torque generation layer 11 must be made of a material that generates a spin torque in the non-collinear antiferromagnetic layer 12 when a current flows between the first input terminal Tx1 and the second input terminal Tx2. Examples of materials include heavy metals (5d transition metals) such as Hf, Ta, W, Pt, and Ir, as well as alloys or stacked films made of these metals. Other examples include topological insulators such as compounds of Bi and Se and compounds of Bi and Sb. The mechanism by which the spin torque is generated is arbitrary. For example, it may be the spin Hall effect within the spin torque generation layer 11, the Rashba-Edelstein effect at the interface between the spin torque generation layer 11 and the non-collinear antiferromagnetic layer 12, or coupling between the momentum vector (or wave vector) and spin of conduction electrons due to the topological band structure of the spin torque generation layer.

[0028] FIG. 4 illustrates the relationship between current and spin current when the spin torque acting on the non-collinear antiferromagnetic layer 12 originates from the spin Hall effect in the spin torque generation layer 11. In this case, when current ICharge flows through the spin torque generation layer 11 in the X direction, a spin flow, i.e., a spin current ISpin, is generated in the Z direction. This spin current ISpin penetrates the non-collinear antiferromagnetic layer 12 and exerts a torque on the non-collinear magnetic order. The present invention utilizes the dynamics of the non-collinear magnetic order induced by this. Note that the conduction electrons responsible for the spin current generated by the spin Hall effect have spin polarization in the Y direction. The sign of the spin polarization varies depending on the type of spin torque generation layer 11 used, but the present invention can be implemented using a material that generates spin polarization of any sign.

[0029] (Outline of how to use electronic devices) Next, we will explain how to use the electronic device 1 of the present invention, in the following cases: as an oscillator, a detector, a random number generator, and a memory device, in that order. Regardless of the device's use, each device utilizes dynamics induced by the non-collinear magnetic order in the non-collinear antiferromagnetic layer 12 when a current is applied between the first input terminal Tx1 and the second input terminal Tx2. The dynamics utilized here differs from those previously reported for ferromagnets, collinear antiferromagnets, and non-collinear antiferromagnets, and was discovered through experiments by the inventors of the present invention. This dynamics is the relationship between the plane in which the magnetic order is formed and the current direction, as described above. Therefore, it can be understood that the spin torque generation layer 11 does not necessarily need to extend in a cross shape; it can suffice if it extends to the same extent as the non-collinear antiferromagnetic layer 12.

[0030] Figure 5 shows the operation of the oscillator. From top to bottom, the time evolution of the input signal, the time evolution of the output signal, and the time evolution of the chiral spin structure are shown. When used as an oscillator, a direct current is introduced between the first input terminal Tx1 and the second input terminal Tx2. The sign of the current can be either positive or negative. When the magnitude of the input current is above a certain threshold, the voltage output from the first output terminal, the voltage output from the second output terminal, or the difference between the voltages output from the first and second output terminals oscillates at a constant frequency. In other words, an alternating current voltage is output. The time evolution of the chiral spin structure in the area enclosed by the dotted rectangle in the middle of Figure 5 is shown in the bottom, inducing a steady rotation of the weak ferromagnetic magnetization clockwise or counterclockwise. The figure shows the weak ferromagnetic magnetization rotating in the order of 11 o'clock, 1 o'clock, 3 o'clock, 5 o'clock, 7 o'clock, 9 o'clock, 11 o'clock, 1 o'clock, etc. The direction of rotation is determined by the sign of the spin torque. This rotation continues as long as a DC input current is applied, and no external magnetic field is required. This is an advantageous feature of the electronic device of the present invention. By applying a DC current between the first and second input terminals, an AC voltage can be generated from the first and second output terminals. The frequency of the generated AC voltage is determined by the magnetic anisotropy of the material used in the non-collinear antiferromagnetic layer 12, the Dzyaloshinskii-Moriya interaction constant, and the applied DC current.

[0031] Figure 6 shows how the device operates as a detector. From top to bottom, the diagrams show the time variation of the input signal, the time variation of the output signal, and the time variation of the chiral spin structure. When used as a detector, an AC current is introduced between the first input terminal Tx1 and the second input terminal Tx2. When the amplitude of the AC current exceeds a certain value and the frequency satisfies certain conditions, the chiral spin structure and the associated weak ferromagnetic magnetization direction repeat clockwise and counterclockwise motion, as shown in the bottom of Figure 6. The diagram shows the oscillations in the order 11 o'clock, 1 o'clock, 3 o'clock, 5 o'clock, 3 o'clock, 1 o'clock, 11 o'clock, 1 o'clock, 3 o'clock, ... In practice, the present invention can be implemented even with a smaller amplitude, such as 1 o'clock, 3 o'clock, 5 o'clock, 3 o'clock, 1 o'clock, 3 o'clock, 5 o'clock, 3 o'clock, ... This movement of the chiral spin structure causes the Hall resistance to oscillate at the same frequency as the input AC current. This generates a DC output voltage. The sign of the output voltage is opposite between the first and second output terminals. Therefore, a larger signal can be obtained by connecting the first and second output terminals to a differential amplifier. This operation is also advantageous because no external magnetic field is required.

[0032] Figure 7 shows the operation of a random number generator. From top to bottom, the diagrams show the time evolution of the input signal, the time evolution of the perpendicular component of the weak ferromagnetic magnetization, and the time evolution of the chiral spin structure. The dynamics induced in the chiral spin structure in a random number generator are similar to those of the oscillator described with reference to Figure 5. When a pulse current with an amplitude greater than a certain value and a relatively long pulse width is applied to the electronic device of the present invention, the phase of the rotation of the chiral spin structure relaxes, making the final state unpredictable. This phenomenon is utilized when using the device as a random number generator. Generally, the phase coherence induced in a magnetic material is lost after about 10 periods at room temperature. The time for one period of the chiral spin structure motion induced by a realistic input current intensity is in the range of approximately 0.2 to 4 nanoseconds, as described below, and is typically 1 nanosecond. Therefore, although it depends on the material used and the strength of the input pulse current, inputting a rectangular pulse current with a pulse width of 10 nanoseconds or more will cause the chiral spin structure to rotate more than 10 times, making the final state impossible to predict. In other words, by subsequently reading out the state of the chiral spin structure in some way, it is possible to extract true physical random numbers. Note that while Figure 7 shows the case where a rectangular, positive pulse current is introduced, the shape and sign of the pulse width are arbitrary. For example, a trapezoidal pulse or a burst pulse that oscillates positive and negative can also be used.

[0033] Figure 8 shows how the device operates as a memory element. From top to bottom, the diagrams show the time evolution of the input signal, the time evolution of the weak ferromagnetic magnetization, and the time evolution of the chiral spin structure. The operation of the memory element is similar to that of the random number generator described in Figure 7, but the difference is that the pulse width is extremely short, allowing for sufficient control of the final state. For example, by introducing a pulse current with a pulse width of half the cycle, the state can be switched from 11:00 to 5:00 and from 1:00 to 7:00. Figure 8 shows an example of switching from 11:00 to 5:00. As mentioned above, one cycle lasts for 0.2 nanoseconds to 4 nanoseconds, so the pulse width of the input pulse current is preferably 0.1 nanoseconds to 2 nanoseconds. Note that in the case of a memory element, the toggle operation, i.e., the stored information is always rewritten between 0 and 1, so a read operation is performed before writing information, and a write operation is performed only if the read information differs from the desired information.

[0034] (Operating principles of electronic devices) The operating principle underlying the phenomena described above will now be explained. Specifically, by explaining the dynamics induced when spin torque acts on the chiral spin structure discovered by the inventors of the present invention, the basis of the phenomenon utilized by the present invention, or in other words, the law of nature under patent law, will be described.

[0035] As explained with reference to FIG. 3, for example, D0 19 In the case of Mn3Sn with an ordered structure, the C-plane (001 plane) forms a kagome lattice, forming six energetically equivalent non-collinear magnetic orders (degenerate). In the case of thin films in which the C-axis is oriented in the film plane, such as M-plane and A-plane oriented films, the degeneracy between (A), (B), (D), and (E) in Figure 3 and (C) and (F) can be broken, resulting in a 4:2 energy split. Even in this case, the internal energies of (A), (B), (D), and (E) are essentially equivalent. Because the signs of the perpendicular component of the Berry curvature for (A) and (B) are different from those for (D) and (E), they can be electrically distinguished via the anomalous Hall effect.

[0036] Now, let us consider the case where a spin torque acts on this kagome lattice. Specifically, as shown in Figure 4, we consider the case where the origin of the spin torque is the spin Hall effect in the spin torque generation layer 11. In this case, a spin current ISpin is generated in the Z direction, and electron spins polarized in the Y direction are injected into the non-collinear antiferromagnetic layer 12. Then, due to the spin transfer torque, the magnetic moments at each site of the chiral spin structure first rise in the Y direction and then rotate in the kagome plane (XZ plane). It is important that the magnetic moments at each site rotate in the same direction. As a result, if the sign of the spin torque is constant, the rotation continues in the same direction. However, if the sign of the spin torque oscillates between positive and negative, the chiral spin structure also alternates between clockwise and counterclockwise motion accordingly. These dynamics have been clarified by the inventors' calculations and experiments, which will be described later, and the oscillators, detectors, random number generators, and memory devices realized thereby are distinct from devices that utilize the dynamics of ferromagnets, collinear antiferromagnets, and non-collinear antiferromagnets that have been reported so far. In particular, it should be noted that these should be clearly distinguished from the technology shown in Non-Patent Document 7, which is common only in that it uses a non-collinear antiferromagnet.

[0037] There is a threshold value for the magnitude of the spin torque required to induce rotational motion in the chiral spin structure, which is determined by the properties of the material used in the non-collinear antiferromagnetic layer 12, specifically the magnetic anisotropy and the Dzialoshinski-Moriya interaction. Meanwhile, the magnitude of the spin torque generated per current is determined by the material used in the spin torque generation layer 11. The speed of the rotational motion of the chiral spin structure is determined by the properties of the non-collinear antiferromagnetic layer 12 and the magnitude of the applied spin torque. While the above explanation describes the case where the spin torque acts adiabatically in the form of angular momentum transfer (also known as anti-damping torque or Slonczewski-like torque), the torque acting on the magnetic moment of each site in the chiral spin structure due to the current can also be in the form of an effective magnetic field (also known as field-like torque).

[0038] As can be seen from the above explanation, the present invention is based on the dynamics of the chiral spin structure in the non-collinear antiferromagnetic layer 12, and therefore, it is desirable that the non-collinear antiferromagnetic layer 12 has a single magnetic domain. 19 It has been revealed that the magnetic domain size of an ordered Mn3Sn thin film is approximately 200 nm. This indicates that the diameter D of the non-collinear antiferromagnetic layer 12 is preferably 200 nm or less. However, in practice, the magnetic domain size of a non-collinear antiferromagnetic material can vary depending on the material used, the thin film deposition method, the substrate, and other factors, and the suitable design range for the diameter D of the non-collinear antiferromagnetic layer 12 can also vary accordingly.

[0039] (Manufacturing method and operation verification of the first embodiment) The first embodiment will be described in more detail by presenting the results of numerical simulations and experiments conducted by the inventors regarding the dynamics induced when a spin torque acts on the chiral spin structure of a non-collinear antiferromagnet.

[0040] Figure 9(A) shows the results of a numerical simulation conducted by the inventors on the time evolution of the component perpendicular to the film plane of the weak ferromagnetic magnetic moment when a spin torque acts on the chiral spin structure. Based on the Landau-Lifshitz-Gilbert equation, a time evolution calculation was performed on three sublattices of the Kagome lattice. The material parameters are D0 19 It is set to simulate -Mn3Sn, with the kagome plane on the XZ plane, and it is assumed that when spins in the Y direction are injected into this, a torque is applied in the form of anti-damping torque. The current density of the input current and spin torque are converted using a conversion coefficient predicted when W and Pt are used as the spin torque generation layer. The current density is 2.1 MA / cm 2 , 2.5MA / cm 2 and 2.9MA / cm 2 The calculation results are shown for three cases. The current is introduced for a time period between 8 nanoseconds and 30 nanoseconds. The current density is 2.1 MA / cm. 2 No significant change occurred in the case of 2.5MA / cm 2 and 2.9MA / cm 2 In this case, the weakly ferromagnetic magnetic moment oscillates, and the oscillation period shortens with increasing current density. Figure 9(B) shows the results of calculations performed in the same manner as in Figure 9(A), plotting the oscillation frequency versus the current density of the input current. It can be seen that oscillations are induced above a certain threshold, and the oscillation frequency gradually approaches a linear function passing through the origin. Calculations performed over a wider range revealed that the oscillation frequency varies between approximately 250 MHz and 5 GHz within the realistic range of current densities that can be introduced. The reciprocal of this frequency, 4 ns to 0.2 ns, corresponds to the rotation period of the chiral spin structure mentioned above, and this determines the pulse width of the input pulse current used in memory elements and random number generators. The ability to change the vibration frequency using a single element without applying an external magnetic field is a notable feature not found in conventional oscillator elements using ferromagnetic materials, and this provides the oscillator element of the present invention with a variable output frequency and the detector element with a variable detection frequency.

[0041] Figure 10 shows the results of an experiment conducted by the inventors. The stacked film used in this experiment was deposited on an MgO (110) substrate. The film configuration, from the substrate side, was W (3 nm), Ta (1 nm), Mn3Sn (8.3 nm), and Pt (4 nm). The Wa / Ta layer corresponds to the spin torque generation layer 11, and the Mn3Sn corresponds to the non-collinear antiferromagnetic layer 12. The Pt corresponds to the second spin torque generation layer 13, which will be described later in the third embodiment. It has been confirmed that equivalent characteristics can be obtained even if the thickness of the W layer is changed within the range of 1 to 10 nm and the Ta layer within the range of 0.5 to 3 nm. It has also been confirmed that equivalent characteristics can be obtained even if the thickness of the Mn3Sn layer is increased to approximately 50 nm. Each layer was deposited using DC magnetron sputtering. The substrate was placed on the stage of the equipment, and each layer was deposited sequentially. Note that the stage was heated to 400°C during the deposition of the Mn3Sn layer. The temperature of this stage is preferably set to 300°C or higher, more preferably in the range of 350 to 500°C. Another experiment showed that it is also preferable to heat the stage when depositing the W layer and Ta layer. After the deposition of the laminated film containing Mn3Sn, a heat treatment was carried out at 500°C for 1 hour. The temperature of this heat treatment is also preferably set to 300°C or higher, more preferably in the range of 350 to 600°C. X-ray diffraction and cross-sectional electron microscope observations have shown that Mn3Sn is a D0 19 It was confirmed that the film was ordered and had an M-plane orientation. Furthermore, the orientation relationship of the crystal orientation was such that the

[0001] direction of the MgO substrate was parallel to the

[0001] direction of the Mn3Sn. After deposition, the film was microfabricated using photolithography, argon ion milling, and other techniques.

[0042] Figure 10(A) shows a scanning electron microscope image of the measured device and the measurement circuit. To simplify the experiment, the spin torque generation layer 11 and the non-collinear antiferromagnetic layer 12 were patterned to the same shape, and the cross in the center of the photograph corresponds to this area. The left and right terminals correspond to the first input terminal Tx1 and the second input terminal Tx2, and the top and bottom terminals correspond to the first output terminal Ty1 and the second output terminal Ty2. The line connecting the first input terminal Tx1 and the second input terminal Tx2 is perpendicular to the

[0001] direction of the MgO substrate, and the line connecting the first output terminal Ty1 and the second output terminal Ty2 is parallel to the

[0001] direction of the MgO substrate. To simplify the sample preparation process, the width W of the spin torque generation layer 11 was set to 10 μm, and the width of the Hall probe extending toward the output terminal was set to 3 μm. Therefore, the 10 × 3 μm area of the non-collinear antiferromagnetic layer 12 was set to 10 μm. 2 As mentioned above, the size of the magnetic domain is 200 nm, which means that this size includes multiple magnetic domains.

[0043] Figure 10(B) shows the change in Hall resistance when the magnetic field is swept in the vertical direction. Higher (lower) Hall resistance values are observed for negative (positive) magnetic fields, which means that the Hall effect is derived from the topology of the chiral spin structure of Mn3Sn in wavenumber space. This confirms that Mn3Sn forms a chiral spin structure as shown in Figure 3.

[0044] Figure 10(C) shows the relationship between the Hall resistance and the applied current (density) when the weak ferromagnetic magnetization of the chiral spin structure is initialized to the upward or downward direction using a perpendicular magnetic field, and then a 100-msec current pulse is applied in the positive or negative direction. As mentioned above, in this sample, multiple magnetic domains are measured simultaneously, and the measurement result reflects the sum of these. The figure shows that the Hall resistance transitions to near the center above a certain threshold. This can be understood as the multiple magnetic domains becoming disordered over a period of 100 msec, which is sufficiently long compared to the period of the chiral spin structure dynamics. After the current pulse is applied, each magnetic domain settles into one of six stable states, and the Hall resistance observed near the center is the average of these states.

[0045] Up to this point, we have explained the operating principle and conditions of use of the first embodiment shown in Figure 1, but by modifying the structure shown in Figure 1, the electronic device of the present invention can be used more effectively. Naturally, these modifications also fall within the scope of the present invention. Below, we will explain the second to sixth embodiments. Note that the headings simply indicate the characteristic properties or characteristic structures of each embodiment.

[0046] (Second Example: Synchronous Use) FIG. 11 is an XY plan view showing a schematic structure of the second embodiment. The second embodiment is effective when used as an oscillator or detector. In the second embodiment, multiple dots of non-collinear antiferromagnetic layers 12 are provided and electrically connected. A high-frequency electrical signal is output in response to the movement of the chiral spin structure in the multiple dots of the non-collinear antiferromagnetic layers 12. The output high-frequency electrical signal reaches other dots of the non-collinear antiferromagnetic layers 12. As a result of these combined effects, a phenomenon similar to the synchronous oscillation due to the locking of the magnetization phase of a ferromagnetic material reported in Non-Patent Document 3 is also induced in the chiral spin structure of the non-collinear antiferromagnetic material. As a result, an oscillator can output an AC voltage with a narrow frequency spectrum and high intensity, i.e., a high Q factor. A detector can selectively detect only input signals within a narrower frequency range to obtain a high output signal.

[0047] (Third Example: HM / NCAFM / HM stacked structure) FIG. 12 is an XZ cross-sectional view showing a schematic structure of the third embodiment. This third embodiment is useful for oscillators, detectors, random number generators, and memory devices. In this third embodiment, the surface of the non-collinear antiferromagnetic layer 12 opposite the spin torque generation layer 11 is connected to the second spin torque generation layer 13. Materials that can be used for the second spin torque generation layer 13 are the same as those that can be used for the spin torque generation layer 11 described above, and therefore are not described here. When an input current is applied, the second spin torque generation layer 13 generates a spin torque acting on the non-collinear antiferromagnetic layer 12, and the direction of this spin torque is the same as the spin torque generated by the spin torque generation layer 11. This allows a stronger spin torque to act on the chiral spin structure of the non-collinear antiferromagnetic layer 12, resulting in efficient operation. In Figure 12, the arrows indicate the direction of the current I and the direction of the spin current IS when both the spin torque generation layer 11 and the second spin torque generation layer 13 exhibit the spin Hall effect but with opposite polarities. As shown in the figure, if the spin torque generation layer 11, the non-collinear antiferromagnetic layer 12, and the second spin torque generation layer 13 have metallic electrical conduction, a portion of the input current flows through the second spin torque generation layer 13 in the X direction. This current generates a spin current IS. If the effective spin Hall angles of the spin torque generation layer 11 and the second spin torque generation layer 13 are opposite, electron spins polarized in the same direction flow into the non-collinear antiferromagnetic layer 12, resulting in a stronger spin torque. Therefore, oscillators and detectors can obtain larger output signals with lower current, voltage, and power. Furthermore, random number generation and memory devices can update their states with lower current, voltage, and power. 10, W / Ta corresponds to the spin torque generation layer 11, and Pt corresponds to the second spin torque generation layer 13. It is known that W / Ta has a negative spin Hall angle, and Pt has a positive spin Hall angle, and they are designed so that a large torque acts on the Mn3Sn layer.

[0048] (Fourth Example: Narrowing Structure) 13 shows an XY plan view and an XZ cross-sectional view illustrating the structure of Example 4. In the previous embodiments, the non-collinear antiferromagnetic layer 12 has a circular shape in the XY plane and is formed to fit within the spin torque generation layer 11. However, in Example 4, the non-collinear antiferromagnetic layer 12 is patterned to have the same shape as the spin torque generation layer 11 by devising a shape. In the fourth embodiment, a narrowed portion 12A is formed in the non-collinear antiferromagnetic layer 12. Because the narrowed portion 12A is narrower than the other regions, when a current is introduced between the first input terminal Tx1 and the second input terminal Tx2, the current density is high. This induces chiral spin dynamics only in the narrowed portion 12A, and nothing occurs in the other regions. Therefore, if the narrowed portion 12A is sufficiently small, it becomes possible to control essentially a single magnetic domain with current. For this reason, the linewidth of the non-collinear antiferromagnetic layer 12 in the narrowed portion 12A is preferably 200 nm or less. In the fourth embodiment, the number of steps can be reduced and manufacturing costs can be reduced because the non-collinear antiferromagnetic layer 12 and the spin torque generation layer 11 can be patterned simultaneously. In practice, however, the current density essentially concentrates in the narrowed portion 12A, and in that sense, the spin torque generation layer 11 and the non-collinear antiferromagnetic layer 12 do not necessarily have to have the same shape.

[0049] (Fifth embodiment: TMR reading) 14 shows an XYZ perspective view, an XY plan view, and an XZ cross-sectional view illustrating the structure of the fifth embodiment. In the previous embodiments, the first output terminal Ty1 and the second output terminal Ty2 were provided, mainly utilizing the fact that the state of the chiral spin structure of the non-collinear antiferromagnetic layer 12 can be electrically detected via the anomalous Hall effect. However, in the fifth embodiment, a single output terminal is provided here to detect the state of the chiral spin structure of the non-collinear antiferromagnetic layer 12 using the tunnel magnetoresistance effect. This embodiment is effective mainly in random number generation devices and memory devices. In the fifth embodiment, a tunnel barrier layer 14 is provided on the surface of the non-collinear antiferromagnetic layer 12 opposite the spin torque generation layer 11, and a reference layer 15 is provided adjacent to the surface of the tunnel barrier layer 14 opposite the non-collinear antiferromagnetic layer 12. The tunnel barrier layer 14 can be made of an insulator such as MgO or Al2O3. The reference layer 15 is made of a magnetic material, and may be a ferromagnetic material or a non-collinear antiferromagnetic material. The magnetic structure of the magnetic material used for the reference layer 15 is substantially fixed. Although FIG. 14 shows the spin torque generation layer 11, non-collinear antiferromagnetic layer 12, tunnel barrier layer 14, and reference layer 15 provided in this order from the substrate side, this order may be reversed. The non-collinear antiferromagnetic layer 12, tunnel barrier layer 14, and reference layer 15 form a magnetic tunnel junction. The state of the non-collinear antiferromagnetic layer 12 is detected by the tunnel magnetoresistance effect of this magnetic tunnel junction. This method can be formed in a smaller area than the method using the anomalous Hall effect, and generally, the tunnel magnetoresistance effect produces a larger electrical signal output than the anomalous Hall effect, enabling stable readout. Although the non-collinear antiferromagnetic layer 12 and the tunnel barrier layer 14 are formed adjacent to each other in FIG. 14, they are not necessarily adjacent. For example, a ferromagnetic layer may be inserted between the non-collinear antiferromagnetic layer 12 and the tunnel barrier layer 14 to improve the readout characteristics using the tunnel magnetoresistance effect. To read out data using the tunnel magnetoresistance effect, the surface of the reference layer 15 opposite to the tunnel barrier layer 14 is connected to the tunnel electrode terminal T_mtj.

[0050] In the second to fifth embodiments described so far, the spin torque generation layer 11, which is the source of spin torque acting on the non-collinear magnetic structure in the non-collinear antiferromagnetic layer 12, is provided adjacent to the non-collinear antiferromagnetic layer 12, and a spin current is generated by a phenomenon resulting from spin-orbit interaction such as the spin Hall effect. In other words, all of these embodiments are subordinate to the first embodiment. Regarding the first embodiment, it was explained that an adjustment layer may be provided, but the inventors of the present invention have also discovered an advantageous embodiment in which an intermediate layer is provided not for adjustment purposes but for a more proactive purpose. This embodiment will be described below.

[0051] (Sixth Example: Spin Transfer Type) FIG. 15 shows an XYZ perspective view and an XZ cross-sectional view of the structure of the sixth embodiment. In this sixth embodiment, an intermediate layer 16 is provided adjacent to the non-collinear antiferromagnetic layer 12, and a spin torque generation layer 11 is provided adjacent to the intermediate layer 16 on the opposite side of the non-collinear antiferromagnetic layer 12. A current passing through these three layers generates a spin-polarized current, which acts on the non-collinear magnetic order of the non-collinear antiferromagnetic layer 12. One of the spin torque generation layer 11 or the non-collinear antiferromagnetic layer 12 is connected to the first terminal Tz1, and the other is connected to the second terminal Tz2. While FIG. 15 shows the spin torque generation layer 11 connected to the first input terminal Tz1 and the non-collinear antiferromagnetic layer 12 connected to the second input terminal Tz2, this relationship is arbitrary. In addition, while FIG. 15 shows the non-collinear antiferromagnetic layer 12, intermediate layer 16, and spin torque generation layer 11 stacked in this order from the substrate side, this order may be reversed. In the sixth embodiment, operation is achieved by introducing an input current between the first and second terminals. The intermediate layer 16 is made of a nonmagnetic material. It may be a metal such as Au, Ag, Cu, or Ru, or an insulator such as MgO or Al2O3. The spin torque generation layer 11 must be made of a material that can spin-polarize the current when it is introduced. For example, a ferromagnetic material can achieve this function. When the spin torque generation layer 11 is made of a ferromagnetic material, the direction of its magnetization M is substantially fixed to the second direction. In Figure 15, the second direction is the Y direction. The non-collinear antiferromagnetic layer 12 has a non-collinear magnetic order in a plane perpendicular to the second direction (in the XZ plane in Figure 15). The operating principle of the sixth embodiment will now be described. In the sixth embodiment, an input current is introduced between the first terminal Tz1 and the second terminal Tz2. Similar to the previous embodiments, the input current is a DC current for an oscillator, an AC current for a detector, a relatively long pulse current for a random number generator, or a sufficiently short pulse current for a memory device. The sixth embodiment is characterized in that a spin-polarized current is injected into the non-collinear antiferromagnetic layer 12 by passing the current through the spin torque generation layer 11. As an example, consider the case shown in FIG. 15, where the second terminal Tz2, the non-collinear antiferromagnetic layer 12, the intermediate layer 16, the spin torque generation layer 11, and the first terminal Tz1 are arranged in this order from the substrate side. A current is passed from the second terminal Tz2 to the first terminal Tz1. In this case, conduction electrons flow from the first terminal Tz1 to the second terminal Tz2. When this current passes through the spin torque generation layer 11, it interacts with the magnetization of the spin torque generation layer 11, resulting in spin polarization in the Y direction. These spin-polarized electrons flow into the non-collinear antiferromagnetic layer 12 via the intermediate layer 16. After that, as described with reference to FIGS. 5 to 8, the chiral spin structure formed in the XZ plane in the non-collinear antiferromagnetic layer 12 rotates. The spin torque generation layer 11 does not necessarily need to be a ferromagnetic material, but only needs to have an effective magnetization oriented in the second direction to generate a spin-polarized current. This effective magnetization can also be induced by the topology of the wave number space. In the sixth embodiment, the method of extracting the output signal and the method of providing the output terminals are flexible. For example, when output is obtained using the anomalous Hall effect as in the first embodiment described with reference to FIG. 1, a current is passed through the non-collinear antiferromagnetic layer 12 in one direction (e.g., the X direction) within the film plane, and the output signal can be extracted as a voltage generated in a direction perpendicular to the current (e.g., the Y direction). In this case, a pair of current input terminals and a pair of output terminals are provided orthogonally to connect to the non-collinear antiferromagnetic layer 12 to extract the output signal. On the other hand, when output is obtained using the tunneling magnetoresistance effect as in the fifth embodiment described with reference to FIG. 14, the first terminal Tz1 and the second terminal Tz2 function as output terminals.

[0052] (Advantageous effect over the prior art) The advantageous effects of the present invention over conventional technologies can be better understood by looking at them in two stages: for example, in the case of use as an oscillator, there are first-stage benefits obtained by utilizing a wide range of spintronics technologies, from well-known elements such as CMOS oscillators and quartz crystal resonators to ferromagnetic materials, and there are second-stage benefits obtained by the characteristic configuration of the present invention. In the first stage, the element size can be dramatically reduced to less than 1 / 1000 of that of conventional technology, and the current introduced can also be dramatically reduced. In the second stage, it can be used stably over a wide range of magnetic fields, and no special means for applying a magnetic field is required, which, as already explained, also leads to frequency tunability. In summary, the effect of the present invention is to realize an electronic device with high performance and multiple functions, such as high integration, energy saving, stability, and frequency tunability.

[0053] Although the electronic devices according to the embodiments of the present invention have been described in detail above with reference to the drawings, the specific configurations are not limited to these examples, and the present invention also includes design changes and the like that do not deviate from the gist of the present invention. For example, the second to sixth examples can be used in combination with each other as long as they do not interfere with the mechanism related to the dynamics of non-collinear magnetic order used in the present invention. In particular, the desired functions will not be exhibited if the materials and film thickness dimensions are not limited to the examples disclosed herein, and any material that stacks a layer in which a non-collinear magnetic order is formed and a layer that can exhibit spin torque will be usable. [Explanation of symbols]

[0054] 1. Electronic device 11...Spin torque generation layer 12...Non-collinear antiferromagnetic layer 12A…Stenosis 13...Second spin torque generation layer 14...Tunnel barrier layer 15……Reference layer 16...middle class

Claims

1. The device comprises a main body, an input terminal, and an output terminal, the main body is configured by laminating a spin torque generation layer and a non-collinear antiferromagnetic layer on a substrate in this order or in the reverse order; the input terminals are arranged on both ends of the spin torque generation layer in any direction parallel to the stacking surface of the spin torque generation layer, The non-collinear antiferromagnetic layer has a non-collinear magnetic order in a plane formed by the arbitrary direction and the stacking direction, and utilizes a spin torque acting on the non-collinear antiferromagnetic layer. An electronic device characterized by:

2. The output terminals are disposed on both ends of the spin torque generation layer in a direction substantially perpendicular to the arbitrary direction.

2. The electronic device according to claim 1 .

3. further comprising a tunnel barrier layer and a reference layer; the tunnel barrier layer is connected to a surface of the non-collinear antiferromagnetic layer opposite to the spin torque generation layer, the reference layer is connected to a surface of the tunnel barrier layer opposite to the non-collinear antiferromagnetic layer, The output terminal is disposed on the reference layer.

2. The electronic device according to claim 1 .

4. a main body, a first terminal, and a second terminal; the main body is configured by stacking a spin torque generation layer, an intermediate layer, and a non-collinear antiferromagnetic layer in this order or in reverse order; the spin torque generation layer has a substantially fixed magnetic structure, the magnetization direction being defined as the direction of its effective magnetization; the intermediate layer is made of a non-magnetic material, the non-collinear antiferromagnetic layer has a non-collinear magnetic order in a plane perpendicular to the magnetization direction, and utilizes a spin torque acting on the non-collinear antiferromagnetic layer; the spin torque generation layer has a surface opposite to the intermediate layer connected to the first terminal; The non-collinear antiferromagnetic layer has a surface opposite to the intermediate layer that is connected to the second terminal. An electronic device characterized by:

5. The electronic device is used as an oscillator, a detector, a random number generator, or a memory device.

5. The electronic device according to claim 1, wherein the first and second electrodes are electrically connected to each other.

6. The spin torque generation layer contains any one of Ta, W, Hf, Pt, and Ir.

6. An electronic device according to claim 1, wherein the electronic device is a semiconductor device.

7. The non-collinear antiferromagnetic layer is made of any one of an alloy containing Mn and Sn, an alloy containing Mn and Ge, an alloy containing Mn and Ir, and an alloy containing Mn and Pt.

7. An electronic device according to any one of claims 1 to 6.

8. The non-collinear antiferromagnetic layer has a diameter of 200 nm or less.

8. An electronic device according to any one of claims 1 to 7.

9. a plurality of the non-collinear antiferromagnetic layers are provided, and the layers are electrically connected to each other; The electronic device is used as an oscillator or detector.

8. An electronic device according to any one of claims 1 to 7.

10. Further, a second spin torque generation layer is provided, the second spin torque generation layer is provided adjacent to a surface of the non-collinear antiferromagnetic layer opposite to the spin torque generation layer, The electronic device is used as an oscillator or detector.

10. The electronic device according to claim 1, wherein the first and second electrodes are electrically connected to each other.

11. A method for manufacturing an electronic device according to any one of claims 1 to 10, comprising: A step of placing the substrate on the stage; depositing a spin torque generating layer on a substrate; depositing a non-collinear antiferromagnetic layer while the surface of the stage is maintained at 300 degrees or higher; a step of subjecting the substrate to heat treatment so as to heat the substrate to 300°C or higher; A process of performing microfabrication; 2. A method for manufacturing an electronic device comprising the steps of:

12. A method of using an electronic device according to any one of claims 1 to 10 as an oscillation element, comprising the steps of: DC current is introduced between the input terminals A method of using an electronic device.

13. A method for using an electronic device according to any one of claims 1 to 10 as a detector element, comprising: AC current is introduced between the input terminals A method of using an electronic device.

14. A method of using an electronic device according to any one of claims 1 to 10 as a random number generating element, comprising the steps of: A pulse current with a pulse width of 10 nanoseconds or more is input between the input terminals. A method of using an electronic device.

15. A method of using an electronic device according to any one of claims 1 to 10 as a memory element, comprising the steps of: A pulse current with a pulse width of 0.1 nanoseconds or more and 2 nanoseconds or less is input between the input terminals. A method of using an electronic device.

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