Radiation detector

Abstract

To provide a radiation detector capable of reducing noise.SOLUTION: According to the embodiment, a radiation detector comprises a detection unit, a load unit, a first terminal, a second terminal, and a third terminal. The detection unit comprises a first end part and a first other end part. The detection unit can output a signal corresponding to radiation incident on the detection unit. The load unit comprises a second end part and a second other end part. The second end part is electrically connected to the first other end part. The first terminal is electrically connected to the first end part. The second terminal is electrically connected to the second other end part. The third terminal is electrically connected to the first other end part and the second end part.SELECTED DRAWING: Figure 1

Description

[Technical Field]

[0001] FIELD OF THE INVENTION An embodiment of the present invention relates to a radiation detector. [Background technology]

[0002] In radiation detectors, it is desirable to reduce noise. [Prior art documents] [Patent documents]

[0003] [Patent Document 1] Japanese Patent Application Publication No. 2018-85387 Summary of the Invention [Problem to be solved by the invention]

[0004] SUMMARY OF THE INVENTION Embodiments of the present invention provide a radiation detector that can reduce noise. [Means for solving the problem]

[0005] According to an embodiment of the present invention, a radiation detector includes a detection unit, a load unit, a first terminal, a second terminal, and a third terminal. The detection unit includes a first end and a first other end. The detection unit is capable of outputting a signal according to radiation incident on the detection unit. The load unit includes a second end and a second other end. The second end is electrically connected to the first other end. The first terminal is electrically connected to the first end. The second terminal is electrically connected to the second other end. The third terminal is electrically connected to the first other end and the second end. [Brief explanation of the drawings]

[0006] [Figure 1] 1(a) and 1(b) are schematic views illustrating the radiation detector according to the first embodiment. [Figure 2] FIG. 2 is a graph illustrating the characteristics of the radiation detector according to the reference example. [Figure 3]FIG. 3 is a graph illustrating the characteristics of the radiation detector according to the first embodiment. [Figure 4] FIG. 4 is a schematic view illustrating the radiation detector according to the first embodiment. [Figure 5] 5(a) and 5(b) are schematic views illustrating the radiation detector according to the first embodiment. [Figure 6] 6(a) and 6(b) are schematic views illustrating radiation detection according to the second embodiment. [Figure 7] FIG. 7 is a schematic view illustrating the radiation detector according to the second embodiment. DETAILED DESCRIPTION OF THE INVENTION

[0007] Hereinafter, embodiments of the present invention will be described with reference to the drawings. The drawings are schematic or conceptual, and the relationship between the thickness and width of each part, the size ratio between parts, etc. are not necessarily the same as those in reality. Furthermore, even when the same part is shown, the dimensions and ratios may be different depending on the drawing. In the present specification and the drawings, elements similar to those described above with reference to the previous drawings are designated by the same reference numerals, and detailed descriptions thereof will be omitted as appropriate.

[0008] (First embodiment) 1(a) and 1(b) are schematic views illustrating the radiation detector according to the first embodiment. Fig. 1(a) is a cross-sectional view taken along line A1-A2 in Fig. 1(b), and Fig. 1(b) is a plan view of an extracted portion included in the radiation detector.

[0009] As shown in FIG. 1(a), a radiation detector 110 according to the embodiment includes a detection section 10S, a load section 10L, a first terminal T1, a second terminal T2, and a third terminal T3.

[0010] The detecting unit 10S includes a first end portion e1 and a first other end portion f1. The detecting unit 10S is capable of outputting a signal Sig1 corresponding to the radiation 81 incident on the detecting unit 10S.

[0011] The load section 10L includes a second end portion e2 and a second other end portion f2. The second end portion e2 is electrically connected to the first other end portion f1.

[0012] The first terminal T1 is electrically connected to the first end e1, the second terminal T2 is electrically connected to the second other end f2, and the third terminal T3 is electrically connected to the first other end f1 and the second end e2.

[0013] 1(a) and 1(b), the radiation detector 110 may further include a substrate 12. The substrate 12 includes a first surface 12f. The first surface 12f includes a first substrate region r1, a second substrate region r2, a third substrate region r3, a fourth substrate region r4, and a fifth substrate region r5. The boundaries between these regions may be unclear.

[0014] As shown in FIG. 1(b), a detection unit 10S is provided in a first substrate region r1. A load unit 10L is provided in a second substrate region r2. A first terminal T1 is provided in a third substrate region r3. A second terminal T2 is provided in a fourth substrate region r4. A third terminal T3 is provided in a fifth substrate region r5.

[0015] The first terminal T1, the second terminal T2, and the third terminal T3 are, for example, pad portions. For example, the first terminal T1 faces the third substrate region r3. The second terminal T2 faces the fourth substrate region r4. The third terminal T3 faces the fifth substrate region r5.

[0016] For example, radiation 81 to be detected is incident on the detection unit 10S. In the detection unit 10S, a signal Sig1 corresponding to the radiation 81 is generated.

[0017] 1(a), for example, the detection unit 10S includes a first electrode 51, a second electrode 52, and a semiconductor layer 35. The first electrode 51 is electrically connected to a first terminal T1. The second electrode 52 is electrically connected to a third terminal T3. The semiconductor layer 35 is located between at least a portion of the second electrode 52 and at least a portion of the first electrode 51.

[0018] In this example, as shown in FIG. 1(a), the detection unit 10S further includes a scintillator layer 11. In FIG. 1(b), the scintillator layer 11 is omitted. For example, radiation 81 to be detected is incident on the scintillator layer 11. The radiation 81 is converted into light in the scintillator layer 11. The generated light is incident on the semiconductor layer 35. Mobile charges are generated in the semiconductor layer 35 based on the incident light. A bias voltage Vb is applied to the first electrode 51 by the power supply 71. As a result, the generated charges migrate toward the first electrode 51 or the second electrode 52. A signal Sig1 is generated by the migrated charges. In one example, the bias voltage Vb is negative.

[0019] The signal Sig1 can be extracted from the third terminal T3. For example, an amplifier 72 is electrically connected to the third terminal T3. For example, the signal amplified by the amplifier 72 may be converted into a digital signal by an AD converter 73. The signal obtained from the AD converter 73 is used as the detection result signal Sig2.

[0020] In an embodiment, the scintillator layer 11 may not be provided, and the radiation 81 may be converted into an electrical signal in the semiconductor layer 35. In this case, too, a signal Sig1 is generated by charges based on the radiation 81. The signal Sig1 is taken out from the third terminal T3 and amplified by the amplifier 72.

[0021] In this embodiment, the load unit 10L is connected to the third terminal T3. The second end e2 of the load unit 10L is electrically connected to the third terminal T3. The second other end f2 of the load unit 10L is electrically connected to the second terminal T2.

[0022] The load section 10L is electrically connected to the detection section 10S. It has been found that providing such a load section 10L can reduce noise.

[0023] FIG. 2 is a graph illustrating the characteristics of the radiation detector according to the reference example. FIG. 2 corresponds to a reference example in which the load section 10L is not provided. The horizontal axis of FIG. 2 represents the frequency fr1 of the signal Sig1. The vertical axis represents the noise intensity NP1 in the output signal of the amplifier 72. It is preferable that the noise intensity NP1 is small. FIG. 2 illustrates the characteristics when the detection area S1 of the detection section 10S is changed. The detection area S1 corresponds to the area of the semiconductor layer 35 between the first electrode 51 and the second electrode 52.

[0024] 2, the noise intensity NP1 varies depending on the frequency fr1. The noise intensity NP1 increases as the detection area S1 increases.

[0025] For example, the detection efficiency can be improved by increasing the detection area. In the reference example, increasing the detection area S1 increases the noise intensity NP1. For this reason, it is practically difficult to obtain high detection efficiency.

[0026] FIG. 3 is a graph illustrating the characteristics of the radiation detector according to the first embodiment. Fig. 3 corresponds to the characteristics of the radiation detector 110 according to the embodiment. The radiation detector 110 is provided with a load section 10L. The horizontal axis of Fig. 3 represents frequency fr1, and the vertical axis represents noise intensity NP1.

[0027] Fig. 3 illustrates the characteristics when the detection area S1 of the detection unit 10S is changed. As shown in Fig. 3, in the radiation detector 110, the noise intensity NP1 is small even when the detection area S1 is changed. A significantly low noise intensity NP1 is obtained, independent of the frequency fr1.

[0028] As described above, according to the embodiment, it is possible to provide a radiation detector capable of reducing noise. By reducing noise, it is possible to increase the detection area S1, and high detection efficiency can be obtained.

[0029] FIG. 4 is a schematic view illustrating the radiation detector according to the first embodiment. 4, in the radiation detector 110, the load section 10L is electrically connected in series with the detection section 10S. The electrical connection point between the detection section 10S and the load section 10L is the third terminal T3. The amplifier 72 is electrically connected to the third terminal T3.

[0030] On the other hand, in the above-described reference example, the load unit 10L is not provided. In the reference example, the amplifier 72 is connected in parallel with the detection unit 10S. In the reference example, the capacitance (load) of the detection unit 10S is large when viewed from the amplifier 72. Therefore, for example, when the detection area S1 of the detection unit 10S increases and the load increases, the amplifier 72 is likely to become unstable. For this reason, noise increases in the reference example.

[0031] On the other hand, in the embodiment, the load section 10L is electrically connected in series with the detection section 10S. The amplifier 72 is electrically connected to their connection point (third terminal T3). In the embodiment, the load seen from the amplifier 72 is the load section 10L. For example, the load (e.g., capacitance) of the load section 10L may be sufficiently small compared to the load (capacitance) of the detection section 10S. Even if the detection area S1 of the detection section 10S is increased, a small load can be maintained. The load seen from the amplifier 72 is small. This results in a small noise intensity NP1. By reducing the noise, the detection area S1 can be increased. High detection efficiency can be obtained.

[0032] In this embodiment, a load section 10L is provided which is connected in series to the detection section 10S. By providing the load section 10L, it is possible to provide a radiation detector capable of reducing noise.

[0033] The capacity of the load section 10L may be, for example, 1 / 2 or less of the capacity of the detection section 10S. The capacity of the load section 10L may be, for example, 1 / 5 or less of the capacity of the detection section 10S. The capacity of the load section 10L may be, for example, 1 / 10 or less of the capacity of the detection section 10S. The capacity of the load section 10L may be, for example, 1 / 1000 or more of the capacity of the detection section 10S. A practical load section 10L with stable characteristics is easily obtained.

[0034] As shown in FIGS. 1(a) and 1(b), in this example, the load section 10L includes a first load element 10A. The first load element 10A includes a first conductive layer 61a, a first opposing conductive layer 61b, and a first organic layer 31. The first opposing conductive layer 61b is electrically connected to the second terminal T2. The first conductive layer 61a is electrically connected to the third terminal T3. At least a portion of the first organic layer 31 is provided between at least a portion of the first conductive layer 61a and at least a portion of the first opposing conductive layer 61b.

[0035] 1(a), the direction from at least a portion of the second electrode 52 to at least a portion of the first electrode 51 is along a first direction. The first direction is, for example, the Z-axis direction. A direction perpendicular to the Z-axis direction is defined as the X-axis direction. A direction perpendicular to the Z-axis direction and the X-axis direction is defined as the Y-axis direction. The first direction (Z-axis direction) corresponds to the stacking direction of the second electrode 52, the semiconductor layer 35, and the first electrode 51.

[0036] A direction intersecting the first direction is defined as a second direction. The second direction is, for example, the X-axis direction. The position of at least a portion of the first organic layer 31 in the second direction is between the position of at least a portion of the first conductive layer 61a in the second direction and the position of at least a portion of the first opposing conductive layer 61b in the second direction. For example, in one direction (second direction) along the XY plane, at least a portion of the first organic layer 31 may be provided between the first conductive layer 61a and the first opposing conductive layer 61b.

[0037] For example, the direction from the at least part of the first organic layer 31 to the second substrate region r2 is along the first direction (Z-axis direction).

[0038] For example, at least a portion of the first electrode 51 is located between the semiconductor layer 35 and the first substrate region r1. For example, the first electrode 51 is located between the semiconductor layer 35 and the scintillator layer 11. For example, the first substrate region r1 is located between the first electrode 51 and the scintillator layer 11.

[0039] In the embodiment, the first organic layer 31 may contain the same material as the material contained in the semiconductor layer 35. The load section 10L can be formed through a simple process.

[0040] For example, the first conductive layer 61a may contain the same material as the material contained in the first electrode 51. For example, the first opposing conductive layer 61b may contain the same material as the material contained in the second electrode 52. The load section 10L can be formed through a simple process.

[0041] For example, the first electrode 51 includes In, Sn, and oxygen. The first electrode 51 may include, for example, ITO (Indium-Tin Oxide). The second electrode 52 may include at least one selected from the group consisting of Al, Mg, B, and C. Such a combination of materials makes it easier to achieve high efficiency in the detection unit 10S.

[0042] The first terminal T1 (e.g., the first pad portion) may be continuous with the first electrode 51. The material of the first terminal T1 may be the same as the material of the first electrode 51. The second terminal T2 (e.g., the second pad portion) may be continuous with the first opposing conductive layer 61b. The material of the second terminal T2 may be the same as the material of the first opposing conductive layer 61b.

[0043] The third terminal T3 (e.g., the third pad portion) may be continuous with the second electrode 52. The material of the third terminal T3 may be the same as the material of the second electrode 52. Alternatively, the third terminal T3 may be continuous with the first conductive layer 61a. The material of the third terminal T3 may be the same as the material of the first conductive layer 61a. The materials of the first terminal T1, the second terminal T2, and the third terminal T3 are arbitrary.

[0044] The first load element 10A may have a rectifying characteristic. For example, the electrical resistance of the first load element 10A in the first state is lower than the electrical resistance of the first load element 10A in the second state. In the first state, the third potential of the third terminal T3 is higher than the second potential of the second terminal T2. In the second state, the third potential of the third terminal T3 is lower than the second potential of the second terminal T2. By providing the rectifying characteristic, noise can be suppressed more stably.

[0045] 1(a), in the embodiment, the load unit 10L does not overlap with the detection unit 10S in the Z-axis direction. For example, it is possible to prevent radiation 81 incident on the detection unit 10S from being incident on the load unit 10L.

[0046] 1(a), a housing 75 may be provided. The housing 75 prevents radiation 81 from entering the load unit 10L. The radiation 81 can enter the detection unit 10S through an opening in the housing 75.

[0047] 5(a) and 5(b) are schematic views illustrating the radiation detector according to the first embodiment. Fig. 5(a) is a cross-sectional view taken along line A1-A2 in Fig. 5(b), and Fig. 5(b) is a plan view of an extracted portion included in the radiation detector.

[0048] 5(a) and 5(b), the radiation detector 111 according to the embodiment includes a first light absorption layer 41. Except for this, the configuration of the radiation detector 111 may be similar to the configuration of the radiation detector 110.

[0049] The first light absorbing layer 41 is located between the first organic layer 31 and the base 12. The first light absorptance of the first light absorbing layer 41 for light is higher than the light absorptance of the first organic layer 31 for that light (first organic layer light absorptance). Light different from light based on the radiation 81 to be detected is prevented from entering the first organic layer 31. Noise is further suppressed.

[0050] For example, there is a possibility that light generated in the scintillator layer 11 passes through the base 12 and propagates to the load section 10L. By providing the first light absorption layer 41, it is possible to prevent light from entering the first organic layer 31. Leakage can be suppressed in the load section 10L. For example, noise can be further suppressed. It becomes easier to obtain an appropriate signal.

[0051] In this example, the radiation detector 111 further includes a second light absorbing layer 42. The first organic layer 31 is located between the second light absorbing layer 42 and the first light absorbing layer 41. The second light absorptance of the second light absorbing layer 42 for light is higher than the light absorptance of the first organic layer 31 for that light (first organic layer light absorptance). Light different from light based on the radiation 81 to be detected is prevented from entering the first organic layer 31. Noise is further suppressed.

[0052] The wavelength of the light may be, for example, a wavelength of visible light, which may be, for example, 480 nm or more and 680 nm or less.

[0053] The first light absorbing layer 41 is preferably insulating. The second light absorbing layer 42 is preferably insulating. The flow of current through these light absorbing layers is suppressed.

[0054] The first light absorption layer 41 and the second light absorption layer 42 are, for example, insulating. The first light absorption layer 41 and the second light absorption layer 42 may include, for example, an organic material including a light absorber. The light absorber may include, for example, a pigment. The pigment may include, for example, carbon black. The pigment may include, for example, a metal oxide (e.g., light-absorbing titanium oxide). The light absorber may include an organic pigment. The organic material may include, for example, at least one selected from the group consisting of PET (polyethylene terephthalate), PEN (polyethylene naphthalate), polyimide, and PC (polycarbonate). The organic material may include, for example, at least one selected from the group consisting of PVT (polyvinyl toluene), PVK (polyvinylcarbazole), and PMMA (polymethyl methacrylate). The organic material included in the light absorption layer may include, for example, the same organic material as the organic material included in the scintillator layer 11.

[0055] (Second embodiment) FIGS. 6(a), 6(b), and 7 are schematic views illustrating the radiation detector according to the second embodiment. Fig. 6(a) is a cross-sectional view taken along line B1-B2 in Fig. 6(b), and Fig. 6(b) is a plan view of an extracted portion included in the radiation detector.

[0056] 6(a) and 6(b), in the radiation detector 120 according to this embodiment, the load section 10L includes a second load element 10B in addition to a first load element 10A. Except for this, the configuration of the radiation detector 120 may be similar to the configuration of the radiation detector according to the first embodiment (the radiation detector 110 or the radiation detector 111).

[0057] As shown in FIG. 6( a ), the second load element 10B includes a second conductive layer 62 a , a second opposing conductive layer 62 b , and a second organic layer 32 .

[0058] As shown in Figures 6(b) and 7, the second conductive layer 62a is electrically connected to the first conductive layer 61a. The second opposing conductive layer 62b is electrically connected to the first opposing conductive layer 61b. As shown in Figures 6(a) and 7, at least a portion of the second organic layer 32 is located between the second conductive layer 62a and the second opposing conductive layer 62b.

[0059] For example, the first load device 10A and the second load device 10B may have rectification characteristics, where the rectification characteristics of the second load device 10B are opposite to the rectification characteristics of the first load device 10A.

[0060] For example, the electrical resistance of the first load element 10A in the first state is lower than the electrical resistance of the first load element 10A in the second state. The electrical resistance of the second load element 10B in the first state is higher than the electrical resistance of the second load element 10B in the second state. In the first state, the third potential of the third terminal T3 is higher than the second potential of the second terminal T2. In the second state, the third potential of the third terminal T3 is lower than the second potential of the second terminal T2. By providing reverse polarity rectification characteristics, noise can be suppressed more stably.

[0061] For example, the second conductive layer 62a may contain the same material as the first opposing conductive layer 61b. The second opposing conductive layer 62b may contain the same material as the first conductive layer 61a. This makes it easier to obtain reverse polarity rectification characteristics.

[0062] In the first and second embodiments, the radiation detector (the radiation detector 110, the radiation detector 111, or the radiation detector 120) may include a power supply 71 and an amplifier 72. The power supply 71 is capable of applying a bias voltage Vb between the second terminal T2 and the first terminal T1. The amplifier 72 is capable of amplifying a signal Sig1 generated between the second terminal T2 and the third terminal T3. The second terminal T2 is set to, for example, a reference potential (for example, a ground potential GND).

[0063] In the embodiment, the semiconductor layer 35 includes, for example, a p-type region and an n-type region. The p-type region may include, for example, at least one of polythiophene and a polythiophene derivative. The n-type region may include, for example, at least one selected from the group consisting of fullerene and a fullerene derivative. In one example, the semiconductor layer 35 includes, for example, poly(3-hexylthiophene) and [6,6]-phenyl C61 butyric acid methyl ester. The p-type region may include, for example, subphthalocyanine or a subphthalocyanine derivative. The p-type region may include, for example, polythiophene or a polythiophene derivative.

[0064] The scintillator layer 11 includes, for example, at least one selected from the group consisting of PVT (Polyvinyl toluene), PVK (Polyvinylcarbazole), and PMMA (Polymethyl methacrylate).

[0065] The base 12 includes, for example, a resin, which includes, for example, at least one selected from the group consisting of PET (polyethylene terephthalate), PEN (polyethylene naphthalate), Polyimide, and PC (polycarbonate).

[0066] In an embodiment, the sensitivity of the radiation detector may be high for beta rays and low for other radiations. For example, the sensitivity of a first signal generated in the detection unit 10S when beta rays are incident on the detection unit 10S is higher than the sensitivity of a second signal generated in the detection unit 10S when at least one of gamma rays, neutron rays, and X-rays is incident on the detection unit 10S. The combination of the organic scintillator layer 11 and the semiconductor layer 35 provides high selectivity in detecting beta rays.

[0067] The embodiment may include the following configurations (for example, technical solutions). (Configuration 1) a detector including a first end and a first other end, the detector being capable of outputting a signal according to radiation incident on the detector; a load section including a second end and a second other end, the second end being electrically connected to the first other end; a first terminal electrically connected to the first end; a second terminal electrically connected to the second other end; a third terminal electrically connected to the first other end and the second end; A radiation detector comprising:

[0068] (Configuration 2) the load section includes a first load element, the first load element includes a first conductive layer, a first opposing conductive layer, and a first organic layer; the first opposing conductive layer is electrically connected to the second terminal; the first conductive layer is electrically connected to the third terminal; 2. The radiation detector of claim 1, wherein at least a portion of the first organic layer is provided between at least a portion of the first conductive layer and at least a portion of the first opposing conductive layer.

[0069] (Configuration 3) the detection unit includes a first electrode, a second electrode, and a semiconductor layer; the first electrode is electrically connected to the first terminal; the second electrode is electrically connected to the third terminal; 3. The radiation detector of claim 2, wherein the semiconductor layer is between at least a portion of the second electrode and at least a portion of the first electrode.

[0070] (Configuration 4) a direction from the at least a portion of the second electrode to the at least a portion of the first electrode is along a first direction; The radiation detector of configuration 3, wherein the position of at least a portion of the first organic layer in a second direction intersecting the first direction is between the position of at least a portion of the first conductive layer in the second direction and the position of at least a portion of the first opposing conductive layer in the second direction.

[0071] (Configuration 5) further comprising a substrate including a first surface including a first substrate region and a second substrate region; the at least a portion of the first electrode is between the semiconductor layer and the first substrate region; 5. The radiation detector of claim 4, wherein a direction from the at least a portion of the first organic layer to the second substrate region is along the first direction.

[0072] (Configuration 6) the first surface further includes a third substrate region, a fourth substrate region, and a fifth substrate region; the first terminal faces the third base region, the second terminal faces the fourth base region, 6. The radiation detector of claim 5, wherein the third terminal faces the fifth base region.

[0073] (Configuration 7) Further comprising a first light absorbing layer; the first light-absorbing layer is between the first organic layer and the substrate; 7. The radiation detector according to configuration 5 or 6, wherein a first optical absorptivity of the first optical absorption layer for the light is higher than a first organic layer optical absorptivity of the first organic layer for the light.

[0074] (Configuration 8) Further comprising a second light absorbing layer; the first organic layer is between the second light absorbing layer and the first light absorbing layer; 8. The radiation detector of claim 7, wherein the second light absorption layer has a second light absorption rate for the light that is higher than a light absorption rate for the first organic layer.

[0075] (Configuration 9) Further comprising a first light absorbing layer and a second light absorbing layer, the at least a portion of the first organic layer is between the second light absorbing layer and the first light absorbing layer; 5. The radiation detector of configuration 3 or 4, wherein a first optical absorptivity of the first optical absorption layer for the light and a second optical absorptivity of the second optical absorption layer for the light are higher than a first organic layer optical absorptivity of the first organic layer for the light.

[0076] (Configuration 10) 10. The radiation detector according to any one of configurations 7 to 9, wherein the first light absorbing layer is insulating.

[0077] (Configuration 11) the detection unit further includes a scintillator layer; 11. The radiation detector according to any one of configurations 3 to 10, wherein the first electrode is located between the semiconductor layer and the scintillator layer.

[0078] (Configuration 12) 12. The radiation detector according to any one of configurations 3 to 11, wherein the first organic layer contains the same material as that contained in the semiconductor layer.

[0079] (Configuration 13) 13. The radiation detector of any one of configurations 3 to 12, wherein the first conductive layer includes the same material as that included in the first electrode.

[0080] (Configuration 14) 14. The radiation detector of any one of configurations 3 to 13, wherein the first opposing conductive layer contains the same material as that contained in the second electrode.

[0081] (Configuration 15) 15. The radiation detector according to any one of aspects 3 to 14, wherein the first electrode contains In, Sn, and oxygen.

[0082] (Configuration 16) 13. The radiation detector according to any one of configurations 3 to 12, wherein the second electrode includes at least one selected from the group consisting of Al, Mg, B, and C.

[0083] (Configuration 17) the load section includes a second load element, the second load element includes a second conductive layer, a second opposing conductive layer, and a second organic layer; the second conductive layer is electrically connected to the first conductive layer; the second opposing conductive layer is electrically connected to the first opposing conductive layer; 17. The radiation detector of any one of configurations 3 to 16, wherein at least a portion of the second organic layer is located between the second conductive layer and the second opposing conductive layer.

[0084] (Configuration 18) the electrical resistance of the first load element in the first state is lower than the electrical resistance of the first load element in the second state; the electrical resistance of the second load element in the first state is higher than the electrical resistance of the second load element in the second state; In the first state, a third potential of the third terminal is higher than a second potential of the second terminal; 18. The radiation detector of claim 17, wherein in the second state, the third potential is lower than the second potential.

[0085] (Configuration 19) the second conductive layer includes the same material as the first opposing conductive layer; 19. The radiation detector of any one of configurations 17-18, wherein the second opposing conductive layer comprises the same material as the first conductive layer.

[0086] (Configuration 20) further comprising a power supply and an amplifier; the power supply is capable of applying a bias voltage between the second terminal and the first terminal; 20. The radiation detector according to any one of configurations 1 to 19, wherein the amplifier is capable of amplifying a signal occurring between the second terminal and the third terminal.

[0087] According to the embodiment, a radiation detector capable of reducing noise can be provided.

[0088] In this specification, "electrically connected" includes a state in which multiple conductors are physically in contact with each other and current flows between these multiple conductors. "Electrically connected" includes a state in which multiple conductors are inserted between other conductors and current flows between these multiple conductors. "Electrically connected" includes a state in which current flows between multiple parts included in one conductor. The boundaries between multiple parts included in one conductor may be unclear or clear.

[0089] In this specification, "vertical" and "parallel" do not only mean strictly vertical and strictly parallel, but also include variations in the manufacturing process, and may mean substantially vertical and substantially parallel.

[0090] The embodiments of the present invention have been described above with reference to examples. However, the present invention is not limited to these examples. For example, the specific configurations of the elements included in the radiation detector, such as the detection unit, load unit, conductive layer, organic layer, scintillator layer, electrode, semiconductor layer, and substrate, are within the scope of the present invention as long as a person skilled in the art can implement the present invention in a similar manner and obtain similar effects by appropriately selecting them from known ranges.

[0091] Any combination of two or more elements of each example within the scope of technical feasibility is also included within the scope of the present invention as long as it encompasses the gist of the present invention.

[0092] All radiation detectors that can be implemented by a person skilled in the art by appropriately modifying the design of the radiation detector described above as an embodiment of the present invention also fall within the scope of the present invention, as long as they include the gist of the present invention.

[0093] Within the scope of the concept of the present invention, a person skilled in the art may conceive of various modifications and alterations, and it is understood that these modifications and alterations also fall within the scope of the present invention.

[0094] Although several embodiments of the present invention have been described, these embodiments are presented as examples and are not intended to limit the scope of the invention. These novel embodiments can be embodied in various other forms, and various omissions, substitutions, and modifications can be made without departing from the spirit of the invention. These embodiments and their modifications are included within the scope and spirit of the invention, and are also included in the scope of the invention and its equivalents as defined in the claims. [Explanation of symbols]

[0095] 10A, 10B...first and second load elements, 10L...load section, 10S...detection section, 11...scintillator layer, 12...substrate, 12f...first surface, 31, 32...first and second organic layers, 35...semiconductor layer, 41, 42...first and second light absorption layers, 51, 52...first and second electrodes, 61a, 62a...first and second conductive layers, 61b, 62b...first and second opposing conductive layers, 71...power supply, 72...amplifier, 73...AD converter, 75...casing, 81...radiation, 110, 111, 120...radiation detector, GND...ground potential, NP1...noise intensity, Sig1...signal, Sig2...detection result signal, T1 to T3...first to third terminals, Vb...bias voltage, e1, e2...first and second ends, f1, f2...first and second other ends, fr1...frequency, r1~r5...first to fifth base regions

Claims

1. a detector including a first end and a first other end, the detector being capable of outputting a signal corresponding to radiation incident on the detector; a load section including a second end and a second other end, the second end being electrically connected to the first other end; a first terminal electrically connected to the first end; a second terminal electrically connected to the second other end; a third terminal electrically connected to the first other end and the second end; Equipped with the load section includes a first load element, the first load element includes a first conductive layer, a first opposing conductive layer, and a first organic layer; the first opposing conductive layer is electrically connected to the second terminal; the first conductive layer is electrically connected to the third terminal; at least a portion of the first organic layer is provided between at least a portion of the first conductive layer and at least a portion of the first opposing conductive layer; the detection unit includes a first electrode, a second electrode, and a semiconductor layer; the first electrode is electrically connected to the first terminal; the second electrode is electrically connected to the third terminal; the semiconductor layer is between at least a portion of the second electrode and at least a portion of the first electrode; Further comprising a first light absorbing layer and a second light absorbing layer, the at least a portion of the first organic layer is between the second light absorbing layer and the first light absorbing layer; a first optical absorptivity of the first optical absorption layer for the light and a second optical absorptivity of the second optical absorption layer for the light are higher than a first organic layer optical absorptivity of the first organic layer for the light.

2. the detection unit further includes a scintillator layer; The radiation detector of claim 1 , wherein the first electrode is between the semiconductor layer and the scintillator layer.

3. The radiation detector of claim 1 , wherein the first organic layer comprises the same material as the semiconductor layer.

4. The radiation detector of claim 1 , wherein the first conductive layer comprises the same material as the first electrode.

5. the load section includes a second load element, the second load element includes a second conductive layer, a second opposing conductive layer, and a second organic layer; the second conductive layer is electrically connected to the first conductive layer; the second opposing conductive layer is electrically connected to the first opposing conductive layer; The radiation detector of claim 1 , wherein at least a portion of the second organic layer is between the second conductive layer and the second opposing conductive layer.

6. the electrical resistance of the first load element in the first state is lower than the electrical resistance of the first load element in the second state; the electrical resistance of the second load element in the first state is higher than the electrical resistance of the second load element in the second state; In the first state, a third potential of the third terminal is higher than a second potential of the second terminal; The radiation detector according to claim 5 , wherein in the second state, the third potential is lower than the second potential.

7. a detector including a first end and a first other end, the detector being capable of outputting a signal corresponding to radiation incident on the detector; a load section including a second end and a second other end, the second end being electrically connected to the first other end; a first terminal electrically connected to the first end; a second terminal electrically connected to the second other end; a third terminal electrically connected to the first other end and the second end; Equipped with the load section includes a first load element, the first load element includes a first conductive layer, a first opposing conductive layer, and a first organic layer; the first opposing conductive layer is electrically connected to the second terminal; the first conductive layer is electrically connected to the third terminal; at least a portion of the first organic layer is provided between at least a portion of the first conductive layer and at least a portion of the first opposing conductive layer; the detection unit includes a first electrode, a second electrode, and a semiconductor layer; the first electrode is electrically connected to the first terminal; the second electrode is electrically connected to the third terminal; the semiconductor layer is between at least a portion of the second electrode and at least a portion of the first electrode; the load section includes a second load element, the second load element includes a second conductive layer, a second opposing conductive layer, and a second organic layer; the second conductive layer is electrically connected to the first conductive layer; the second opposing conductive layer is electrically connected to the first opposing conductive layer; at least a portion of the second organic layer is between the second conductive layer and the second opposing conductive layer; the electrical resistance of the first load element in the first state is lower than the electrical resistance of the first load element in the second state; the electrical resistance of the second load element in the first state is higher than the electrical resistance of the second load element in the second state; In the first state, a third potential of the third terminal is higher than a second potential of the second terminal; In the second state, the third potential is lower than the second potential.

8. further comprising a power supply and an amplifier; the power supply is capable of applying a bias voltage between the second terminal and the first terminal; The radiation detector according to claim 1 or 7, wherein the amplifier is capable of amplifying a signal occurring between the second terminal and the third terminal.

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