Constant temperature crystal oscillator, its manufacturing method and electronic device

Abstract

To provide a constant-temperature crystal oscillator capable of coping with miniaturization, a method for manufacturing the same, and an electronic apparatus.SOLUTION: A constant-temperature crystal oscillator 30 includes a crystal resonator 31, a temperature-controlled oscillation chip 32 having an oscillation circuit and a temperature control circuit, an insulating layer 33, and an electrode structures 341. The crystal resonator includes a vibration element 311 and an airtight packaging structure 312 packaged on an outer periphery of the vibration element. The insulating layer is coated on outer peripheries of the temperature-controlled oscillation chip and the crystal resonator, and the insulating layer is internally provided with: via holes 331; and heating elements 35 electrically connected to the temperature-controlled oscillation chip. The heating elements include a first heating element 351 located between the crystal resonator and the temperature-controlled oscillation chip, and / or a second heating element 352 arranged in a ring shape on the outer peripheries of the crystal resonator and the temperature-controlled oscillation chip. The electrode structure is disposed on the insulating layer and electrically connected to the temperature-controlled oscillation chip through a conductive material in the via hole.SELECTED DRAWING: Figure 2

Description

[Technical Field]

[0001] The present invention relates to the technical field of oven-controlled crystal oscillators (OCXOs), and more particularly to oven-controlled crystal oscillators, their manufacturing methods, and electronic devices. [Background technology]

[0002] The use of electronic devices usually requires the use of a highly stable clock, such as a temperature-sensitive crystal (Temperature Sensing Crystal, TSX) combined with an external processing chip, a Temperature Compensated Crystal Oscillator (TCXO) or an Oven Controlled Crystal Oscillator (OCXO).

[0003] Among them, the constant temperature crystal oscillator is a traditional ultra-high precision clock product, and its design principle is to use the crystal and heating design (including the temperature control circuit and heater) to maintain the crystal and circuit in a constant high temperature environment, and to use the surrounding temperature isolation design to minimize the influence of the external environment on the constant temperature environment. This design leads to the fact that the constant temperature crystal oscillator is a high-power product and is relatively large in size (due to the need for the constant temperature design and temperature isolation design). Summary of the Invention [Problem to be solved by the invention]

[0004] Therefore, it is necessary to provide a thermostatic crystal oscillator that can accommodate miniaturization, a manufacturing method thereof, and an electronic device. [Means for solving the problem]

[0005] In a first aspect, a constant temperature crystal oscillator according to an embodiment of the present application includes: a quartz crystal unit including a vibration element and a hermetically sealed structure sealed around the outer periphery of the vibration element; a temperature-controlled oscillation chip provided on one side of the crystal unit and having an oscillation circuit and a temperature control circuit; an insulating layer covering the outer periphery of the temperature-controlled oscillation chip and the crystal unit; an electrode structure provided on the insulating layer, The insulating layer includes a conductive hole and a heating element electrically connected to the temperature-controlled oscillator chip; The heating element includes a first heating element and / or a second heating element, the first heating element is located between the crystal unit and the temperature-controlled oscillator chip, the second heating element is arranged in a ring shape around the crystal unit and the temperature-controlled oscillator chip, and a conductive material is present in the conductive hole; The electrode structure is electrically connected to the temperature-controlled oscillator chip through the conductive material in the conductive hole.

[0006] According to one embodiment, the crystal unit is a ceramic package crystal unit, and the hermetically sealed structure includes a ceramic base having a cavity and a cover plate covering the ceramic base, A conductor structure is provided within the ceramic base, the vibration element is provided within the cavity and connected to the ceramic base by an adhesive, and the conductor structure of the ceramic base is also electrically connected to the temperature-controlled oscillator chip.

[0007] According to one embodiment, the quartz crystal unit is a quartz crystal unit in a whole crystal package, and the hermetically sealed structure includes a first seal member provided on one side of the vibration element and a second seal member provided on the other side of the vibration element, The first seal member, the vibration element, and the second seal member all contain a crystalline material.

[0008] According to one embodiment, the insulating layer is formed by a multiple semiconductor deposition process, the via holes are formed in the insulating layer by a semiconductor etching process, and the conductive material in the via holes, the first heating element and / or the second heating element, and the electrode structure are formed by a multiple semiconductor deposition and etching process.

[0009] According to one embodiment, the heating element has the first heating element and the second heating element, and both ends of the first heating element are electrically connected to the second heating element or the temperature-controlled oscillator chip, and both ends of the second heating element are connected to the temperature-controlled oscillator chip or the first heating element, respectively.

[0010] According to one embodiment, the number of the second heating elements is plural, and the plural second heating elements are electrically connected and provided in a ring shape on the outer periphery of the crystal unit and the temperature-controlled oscillator chip.

[0011] In a second aspect, a method for manufacturing a constant temperature crystal oscillator according to an embodiment of the present application includes the steps of: providing a temperature controlled oscillation chip having an oscillation circuit and a temperature control circuit; providing a crystal unit having a vibration element and a hermetically sealed structure sealed around the outer periphery of the vibration element, and providing the crystal unit on one side of the temperature-controlled oscillation chip; forming an insulating layer having a conductive hole and a heating element around the temperature-controlled oscillator chip and the crystal unit, providing a conductive material in the conductive hole, the heating element including a first heating element and / or a second heating element, the first heating element being positioned between the crystal unit and the temperature-controlled oscillator chip, and the second heating element being arranged in a ring shape around the crystal unit and the temperature-controlled oscillator chip; forming an electrode structure on the insulating layer and electrically connecting the electrode structure to the temperature-controlled oscillator chip through the conductive material in the conductive hole.

[0012] According to one embodiment, the insulating layer is formed by a multiple semiconductor deposition process, the via holes are formed in the insulating layer by a semiconductor etching process, and the conductive material in the via holes, the first heating element and / or the second heating element, and the electrode structure are formed by a multiple semiconductor deposition and etching process.

[0013] According to one embodiment, the method for manufacturing the constant temperature crystal oscillator further comprises the step of providing a substrate, The insulating layer includes a first substrate portion, a second substrate portion, and a covering portion, and the step of forming the insulating layer having the conductive hole and the heating element around the outer periphery of the temperature-controlled oscillator chip and the crystal unit includes: a sub-step of forming the first substrate portion having the first portion of the second heating element on the substrate and disposing the crystal unit on the first substrate portion; a sub-step of forming a second substrate portion on the first substrate portion, the second substrate portion having the first heating element and a second portion of the second heating element; a sub-step of providing the crystal unit on the second substrate portion; a sub-step of forming a covering portion on the second substrate portion, the covering portion having the third portion of the second heating element and the through hole; wherein the first substrate portion, the second substrate portion, and the covering portion are all formed by a semiconductor deposition process; The method for manufacturing the thermostatic crystal oscillator further includes the step of removing the substrate.

[0014] In a third aspect, an electronic device according to an embodiment of the present application includes a circuit board, and the circuit board is equipped with a constant temperature crystal oscillator according to any one of the above-described embodiments. [Effects of the Invention]

[0015] In the thermostatic crystal oscillator, its manufacturing method, and electronic device provided according to the present application, the crystal unit and the temperature-controlled oscillator chip are sealed and protected via an insulating layer. The first heating element is positioned between the crystal unit and the temperature-controlled oscillator chip to provide heating, and / or the second heating element ring is positioned around the crystal unit and the temperature-controlled oscillator chip to provide heating, thereby effectively ensuring the operation of the crystal unit and the temperature-controlled oscillator chip at a constant temperature and occupying a small space, which is advantageous for reducing the size of the thermostatic crystal oscillator. Furthermore, because the insulating layer covers the temperature-controlled oscillator chip, the temperature-controlled oscillator chip is not exposed, thereby providing better protection for the temperature-controlled oscillator chip. Furthermore, the electrode structure is provided on the insulating layer, which can withstand stress generated by a client application on a circuit board where the thermostatic crystal oscillator is placed, and serves as a buffer, thereby improving the reliability of the thermostatic crystal oscillator and the circuit board of the electronic device having the same. [Brief explanation of the drawings]

[0016] In order to more clearly describe the technical aspects of the embodiments of the present application or related technologies, the following briefly describes the drawings required in the embodiments or related descriptions. Obviously, the drawings in the following description are only embodiments of the present application, and ordinary skilled persons in the art can obtain other drawings based on the provided drawings without paying creative labor.

[0017] [Figure 1] FIG. 1 is a schematic diagram of a cross-sectional structure of a thermostatic crystal oscillator according to a related art. [Figure 2] 1 is a schematic diagram of a cross-sectional structure of a constant temperature crystal oscillator provided by embodiment 1 of the present application. [Figure 3] 1 is a schematic top view of a constant temperature crystal oscillator provided in accordance with a first embodiment of the present invention; [Figure 4] 1 is a schematic bottom view of a constant temperature crystal oscillator provided by embodiment 1 of the present application. FIG. [Figure 5]FIG. 2 is a schematic diagram of a cross-sectional structure of a constant temperature crystal oscillator provided by embodiment 2 of the present application. [Figure 6] 10 is a flowchart of a method for manufacturing a constant temperature crystal oscillator provided by embodiment 3 of the present application. [Figure 7] FIG. 10 is a block schematic diagram of an electronic device provided by Embodiment 4 of the present application. DETAILED DESCRIPTION OF THE INVENTION

[0018] To facilitate understanding of the present application, the present application will now be described in more detail with reference to the accompanying drawings, in which preferred embodiments of the present application are shown. However, the present application is not limited to the embodiments set forth herein, but may be embodied in many different forms. On the contrary, the purpose of providing these embodiments is to provide a more complete and thorough understanding of the present disclosure.

[0019] When a component is said to be "fixed" to another component, it may be directly connected to the other component or may be fixed via other elements. Also, when a component is said to be "connected" to another component, it may be directly connected to the other component or may have an intermediate element. The terms "inner," "outer," "left," "right," and similar terms used herein are for descriptive purposes only and do not represent the only embodiment.

[0020] Unless otherwise defined, all technical and scientific terms used herein have the same meaning as commonly understood by one of ordinary skill in the art to which this application pertains. The terms used in the specification of this application are for the purpose of describing particular embodiments only and are not intended to be limiting of the present application. As used herein, the term "and / or" includes any and all combinations of one or more of the associated listed items.

[0021] 1, in a constant-temperature crystal oscillator 10 of the related art, a crystal unit 11 and a temperature-controlled oscillator 12 are provided on either side of a circuit board 16 having a heating element 15. The temperature-controlled oscillator 12 includes an oscillator circuit element 121 and a temperature-controlled oscillator element 122. One end of a metal lead 17 is connected to the circuit board 16, and the other end of the metal lead 17 passes through a package base 181 and is electrically connected to other elements. A metal cover 182 is connected to the package base 181, and houses the circuit board 16 having the crystal unit 11, the temperature-controlled oscillator 12, and the heating element 15 in a storage space surrounded by the metal cover 182 and the package base 181.

[0022] 1, the storage space surrounded by the metal cover 182 and the package base 181 can be filled with nitrogen or vacuum to form a heat-insulating design. Heating by the heating element 15 ensures that the crystal unit 11, the temperature-controlled oscillator element 12, and related circuit elements are in a constant high-temperature environment, thereby ensuring the reliability of the constant-temperature crystal oscillator 10.

[0023] However, as electronic devices become more compact, the requirements for the size and power consumption of the constant-temperature crystal oscillator 10 also tend to increase. Another related technology has been proposed: a heating element 15 built into the ceramic base of the aforementioned crystal unit. This effectively creates a symmetrical thermal field between the vibration element (i.e., crystal) of the crystal unit 11 and the temperature-controlled oscillator 12, resulting in a relatively constant temperature and miniaturizing the size. Using this heater as the core, a thermal insulating device is added around the periphery to form a completely miniaturized constant-temperature crystal oscillator. However, how to further reduce the size of the constant-temperature crystal oscillator 10, protect the temperature-controlled oscillator 12, and improve reliability is also an important issue in the industry.

[0024] In view of this, the present application proposes a thermostatic crystal oscillator and its manufacturing method, which can achieve a miniaturized package, a small size, and high reliability, a structure of a thermostatic crystal oscillator that can obtain electronic equipment, its manufacturing method, and applications.

[0025] Next, a thermostatic crystal oscillator (a type of temperature-controlled crystal oscillator) provided according to an embodiment of the present application and a method for manufacturing the same will be described in more detail with reference to FIGS.

[0026] <Embodiment 1> Please refer to Figures 2 to 4. Figure 2 is a schematic diagram of the cross-sectional structure of the thermostatic crystal oscillator 30 provided by embodiment 1 of the present application, Figure 3 is a schematic top view of the thermostatic crystal oscillator 30 provided by embodiment 1 of the present application, and Figure 4 is a schematic bottom view of the thermostatic crystal oscillator 30 provided by embodiment 1 of the present application. The thermostatic crystal oscillator 30 includes a crystal resonator 31, a temperature-controlled oscillation chip 32, an insulating layer 33, an electrode structure 341, and a heating element 35. The temperature-controlled oscillation chip 32 may be an oscillation chip with a built-in temperature sensor.

[0027] The above-mentioned quartz crystal resonator 31 includes a resonator element 311 and a hermetically sealed structure 312 enclosed around the periphery of the resonator element 311. It is understood that the above-mentioned quartz crystal resonator 31 is a quartz crystal resonator element that has already been packaged. In this embodiment, the quartz crystal resonator 31 will be mainly described as a ceramic packaged quartz crystal resonator.

[0028] The temperature-controlled oscillator chip 32 is disposed on one side of the hermetic sealing structure 312 and can be electrically connected to the hermetic sealing structure 312 .

[0029] The insulating layer 33 covers at least one side of the temperature-controlled oscillator chip 32 and the hermetically sealed structure 312. The insulating layer 33 has a conductive hole 331. The conductive hole 331 contains a conductive material. The electrode structure 341 is provided in the insulating layer 33 and is electrically connected to the temperature-controlled oscillator chip 32 through the conductive material in the conductive hole 331. The electrode structure 341 may be a pad structure such as a solder pad. The insulating layer 33 is made of a resin material. The electrode structure 341 includes multiple electrodes (i.e., multiple welding pads). In this embodiment, the electrode structure 341 includes a first electrode and a second electrode. The conductive hole 331 is divided into a first conductive hole and a second conductive hole corresponding to the number of the first electrodes and second electrodes. Therefore, the first electrodes are electrically connected to the temperature-controlled oscillator chip through the conductive material in the corresponding first conductive holes, and the second electrodes are electrically connected to the temperature-controlled oscillator chip through the conductive material in the corresponding second conductive holes. As shown in Figure 4, the number of first electrodes in the electrode structure 341 is preferably four, and each first electrode is provided at the bottom of the constant temperature crystal oscillator 30.

[0030] The heating element 35 may include a first heating element 351 and / or a second heating element 352. The first heating element 351 is located between the crystal unit 31 and the temperature-controlled oscillator chip 32. The second heating element 352 is provided in a ring shape on the outer periphery of the crystal unit 31 and the temperature-controlled oscillator chip 32.

[0031] Specifically, both ends of the first heating element 351 are connected to the second heating element 352 or electrically connected to the temperature-controlled oscillator chip 32. Both ends of the second heating element 352 are connected to the temperature-controlled oscillator chip 32 or the first heating element 351, respectively. In this embodiment, an example in which there is only one second heating element 352 is described, but in other modified examples, there may be multiple second heating elements 352. The multiple second heating elements 352 are electrically connected and arranged in a ring shape around the quartz crystal unit 31 and the temperature-controlled oscillator chip 32. The multiple second heating elements 352 form a multi-layer heat-insulating structure, which enhances the heat-insulating effect and further improves the performance of the constant-temperature crystal oscillator 30.

[0032] The insulating layer 33 is formed by a multiple semiconductor deposition process. The conductive hole 331 is formed in the insulating layer 33 by a semiconductor etching process. The conductive material in the conductive hole 331, the first heating element 351 and / or the second heating element 352, and the electrode structure 341 may be the same conductive material and are formed by a multiple semiconductor deposition and etching process. In addition, the semiconductor etching process can achieve patterning of the material layer to be etched by sequentially depositing the material to be etched and a photosensitive etchant and exposing them together with a patterned mask.

[0033] In the constant-temperature crystal oscillator 30 provided by the present embodiment, the temperature-controlled oscillator chip 32 is directly installed on one side of the hermetically sealed structure 312 of the pre-packaged crystal unit 31, and then the insulating layer 33 seals and protects the crystal unit 31 and the temperature-controlled oscillator chip 32. The first heating element is located between the crystal unit and the temperature-controlled oscillator chip for heating, and / or the second heating element is arranged in a ring shape around the crystal unit and the temperature-controlled oscillator chip for heating. This effectively ensures that the crystal unit and the temperature-controlled oscillator chip operate at a constant temperature while occupying a small space, which is advantageous for reducing the size of the constant-temperature crystal oscillator. Moreover, because the insulating layer 33 covers the temperature-controlled oscillator chip 32, the temperature-controlled oscillator chip 32 is not exposed, which provides better protection for the temperature-controlled oscillator chip 32. In addition, the electrode structure 341 is provided on the insulating layer 33 and can withstand stress generated on the client application side when the thermostatic crystal oscillator 30 is mounted on the circuit board, and has a buffering role, thereby improving the reliability of the thermostatic crystal oscillator 30 and the circuit board having it.

[0034] Specifically, the hermetically sealed structure 312 may include a ceramic base 3121 having a cavity 3121a and a cover plate 3122 that covers the ceramic base 3121. The vibration element 311 is provided in the cavity 3121a and can be electrically connected to a conductor structure in the ceramic base 3121 via a conductive adhesive 3121c (such as a conductive adhesive). The conductor structure in the ceramic base 3121 is further electrically connected to the temperature-controlled oscillator chip 32, which is electrically connected to the crystal oscillator 31, thereby driving the crystal oscillator 31. The vibration element 311 is a crystalline material, and specifically may be a quartz crystal.

[0035] <Embodiment 2> Please refer to FIG. 5. FIG. 5 is a cross-sectional view of a constant-temperature crystal oscillator 40 provided by embodiment 2 of the present application. The constant-temperature crystal oscillator 40 in embodiment 2 is basically the same as the constant-temperature crystal oscillator 30 in embodiment 1, with the only difference being that corresponding components are designated by different reference numerals. That is, the above description of the constant-temperature crystal oscillator 30 in embodiment 1 can also be applied to the constant-temperature crystal oscillator 40 in embodiment 2. The following mainly describes the differences between the constant-temperature crystal oscillator 40 in embodiment 2 and the constant-temperature crystal oscillator 30 in embodiment 1.

[0036] In the constant-temperature crystal oscillator 40 of embodiment 2, the first seal member 4124, the second seal member 4125, and the vibration element 411 are all made of crystalline materials. That is, the crystal unit 41 is a crystal unit in an all-crystal package. The hermetically sealed structure 412 includes a first seal member 4124 provided on one side of the vibration element 411 and a second seal member 4125 provided on the other side of the vibration element 411.

[0037] Specifically, in this embodiment, the temperature controlled oscillator chip 42 is further electrically connected to the crystal oscillator 41 in order to drive the crystal oscillator 41 .

[0038] <Embodiment 3> Please refer to FIGS. 2 to 6. FIG. 6 is a flowchart of a method for manufacturing a thermostatic crystal oscillator provided by embodiment 3 of the present application. The manufacturing method includes the following steps S71 to S74. In step S71, a temperature-controlled oscillator chip having an oscillation circuit and a temperature control circuit is provided. As shown in FIGS. 2 to 5, the temperature-controlled oscillator chip may be the temperature-controlled oscillator chip 32 or 42 described in either embodiment 1 or 2.

[0039] In step S72, a quartz crystal resonator is provided and mounted on one side of a temperature-controlled oscillator chip. The quartz crystal resonator includes a resonator element and a hermetically sealed structure encapsulated around the resonator element. Specifically, as shown in FIGS. 2 to 5, the quartz crystal resonator is a ceramic packaged quartz crystal resonator or an all-crystal packaged quartz crystal resonator. That is, the quartz crystal resonator may be the quartz crystal resonator 31 or 41 described in either of the first and second embodiments, and will not be further described here.

[0040] In step S73, an insulating layer having conductive holes and heating elements is formed around the temperature-controlled oscillator chip and the crystal unit. The conductive holes contain a conductive material. The heating elements include a first heating element and / or a second heating element. The first heating element is located between the crystal unit and the temperature-controlled oscillator chip. The second heating element is arranged in a ring shape around the crystal unit and the temperature-controlled oscillator chip. The structures of the insulating layers 33 and 43, the conductive holes 331 and 431, and the heating elements 35 and 45 have been described in detail in the first and second embodiments, so further description is omitted here.

[0041] In step S74, a first electrode and a second electrode are formed on the insulating layer, and the first electrode is electrically connected to the temperature-controlled oscillator chip through the conductive material in the first conductive hole, and the second electrode is electrically connected to the temperature-controlled oscillator chip through the conductive material in the second conductive hole. Note that the above-mentioned electrode structures 341 and 441 have already been described in detail in embodiments 1 and 2, and will not be further described here.

[0042] 2, taking the constant-temperature crystal oscillator 30 of embodiment 1 as an example, the manufacturing method for the constant-temperature crystal oscillator 30 further includes a step of providing a substrate. The insulating layer 33 includes a first substrate portion 33a, a second substrate portion 33b, and a covering portion 33c. The step of forming the insulating layer having the conductive hole 331 and the heating element 35 around the outer periphery of the temperature-controlled oscillation chip 32 and the crystal unit 31 includes the following sub-steps:

[0043] A first substrate portion 33a having a first portion 352a of the second heating element 352 is formed on the substrate, and the crystal oscillator 31 is disposed on the first substrate portion 33a. A second substrate portion 33b having the first heating element 351 and the second portion 352b of the second heating element 352 is formed on the first substrate portion 33a. The above-mentioned crystal oscillator 31 is provided on the above-mentioned second substrate portion 33b. The third portion 352c of the second heating element 352 and the covering portion 33c having the through hole 331 are formed on the second substrate portion 33b. Here, the first substrate portion 33a, the second substrate portion 33b, and the covering portion 33c are all formed by a semiconductor deposition process.

[0044] The method for manufacturing the above-mentioned constant temperature crystal oscillator further includes a step of removing the substrate.

[0045] <Embodiment 4> Please refer to FIG. 7. FIG. 7 is a block schematic diagram of an electronic device 80 provided by a fourth embodiment of the present application. The embodiment of the present application further provides an electronic device 80. The electronic device 80 may be a portable electronic device such as a mobile phone, a tablet, a display, a laptop, or a digital camera, but is not limited to the above devices. The electronic device 80 may also include a circuit board 81 on which the constant temperature crystal oscillator 30 or 40 described in any of the above embodiments is mounted.

[0046] The technical features of the above-described embodiments can be combined in any desired manner. For the sake of brevity, not all possible combinations of the technical features in the above-described embodiments are described. However, as long as there is no contradiction in the combination of these technical features, it should be considered within the scope described in this specification. The above-described embodiments represent only some embodiments of the present application, and although the description is more specific and detailed, this should not be understood as a limitation on the scope of the patent. It should be noted that those skilled in the art can make some modifications and improvements without departing from the spirit of the present application, and these fall within the scope of protection of the present application. Therefore, the scope of protection of the present patent should be governed by the appended claims. [Explanation of symbols]

[0047] 10. Constant Temperature Crystal Oscillator 11 Crystal unit 12 Temperature controlled oscillator 15 Heating element 16 Circuit Board 17 Metal Lead 121 Oscillator circuit element 122 Temperature control circuit element 181 package base 182 Metal Cover 30 Constant Temperature Crystal Oscillator 31 Crystal unit 32 Temperature controlled oscillator chip 33 Insulating layer 33a 1st board part 33b 2nd board part 33c Covering part 35 Heating element 311 Vibration element 312 Hermetically sealed structure 331 Conduction hole 341 Electrode structure 351 First heating element 352 Second heating element 352a Part 1 352b Part 2 352c 3rd part 3121 Ceramic substrate 3121a Cavity 3121c Conductive Adhesive 3122 Lid plate 40 Constant Temperature Crystal Oscillator 41 Crystal unit 42 Temperature-controlled oscillator chip 43 Insulating layer 45 heating element 411 Vibration element 412 Hermetically sealed structure 431 Conduction hole 441 Electrode structure 4124 First sealing member 4125 Second sealing member 80 Electronic equipment 81 Circuit Board

Claims

1. A constant temperature crystal oscillator, a quartz crystal unit including a vibration element and a hermetically sealed structure sealed around the outer periphery of the vibration element; a temperature-controlled oscillation chip provided on one side of the crystal unit and having an oscillation circuit and a temperature control circuit; an insulating layer covering the outer periphery of the temperature-controlled oscillation chip and the crystal unit; an electrode structure provided on the insulating layer, The insulating layer includes a conductive hole and a heating element electrically connected to the temperature-controlled oscillator chip; The heating element includes a first heating element and / or a second heating element, the first heating element is located between the crystal unit and the temperature-controlled oscillator chip, the second heating element is arranged in a ring shape around the crystal unit and the temperature-controlled oscillator chip, and a conductive material is present in the conductive hole; the electrode structure is electrically connected to the temperature-controlled oscillator chip through the conductive material in the conductive hole; the insulating layer is formed by a multiple semiconductor deposition process, the via hole is formed in the insulating layer by a semiconductor etching process, and the conductive material in the via hole, the first heating element and / or the second heating element, and the electrode structure are formed by a multiple semiconductor deposition and etching process. A constant temperature crystal oscillator characterized by:

2. the crystal unit is a ceramic packaged crystal unit, and the hermetically sealed structure includes a ceramic base having a cavity and a cover plate covering the ceramic base; 2. The thermostatic crystal oscillator according to claim 1, wherein a conductor structure is provided within the ceramic base, the vibration element is provided within the cavity and connected to the ceramic base with an adhesive, and the conductor structure of the ceramic base is also electrically connected to the temperature-controlled oscillation chip.

3. the quartz crystal unit is a quartz crystal unit in a whole crystal package, and the hermetically sealed structure includes a first seal member provided on one side of the vibration element and a second seal member provided on the other side of the vibration element; 2. The constant temperature crystal oscillator according to claim 1, wherein the first seal member, the vibration element, and the second seal member all contain a crystalline material.

4. 2. The constant-temperature crystal oscillator according to claim 1, wherein the heating element comprises the first heating element and the second heating element, both ends of the first heating element being electrically connected to the second heating element or the temperature-controlled oscillator chip, and both ends of the second heating element being connected to the temperature-controlled oscillator chip or the first heating element, respectively.

5. 5. The constant temperature crystal oscillator according to claim 4, wherein the number of the second heating elements is plural, the plural second heating elements are electrically connected and arranged in a ring shape around the outer periphery of the crystal unit and the temperature-controlled oscillation chip.

6. A method for manufacturing a constant temperature crystal oscillator, comprising: providing a temperature controlled oscillator chip having an oscillator circuit and a temperature control circuit; providing a crystal unit having a vibration element and a hermetically sealed structure sealed around the outer periphery of the vibration element, and providing the crystal unit on one side of the temperature-controlled oscillation chip; forming an insulating layer having a conductive hole and a heating element around the temperature-controlled oscillator chip and the crystal unit, providing a conductive material in the conductive hole, the heating element including a first heating element and / or a second heating element, the first heating element being positioned between the crystal unit and the temperature-controlled oscillator chip, and the second heating element being arranged in a ring shape around the crystal unit and the temperature-controlled oscillator chip; forming an electrode structure on the insulating layer and electrically connecting the electrode structure to the temperature-controlled oscillator chip through the conductive material in the conductive hole; the insulating layer is formed by a multiple semiconductor deposition process, the via hole is formed in the insulating layer by a semiconductor etching process, and the conductive material in the via hole, the first heating element and / or the second heating element, and the electrode structure are formed by a multiple semiconductor deposition and etching process.

2. A method for manufacturing a thermostatic crystal oscillator comprising:

7. The method for manufacturing the thermostatic crystal oscillator further comprises the step of providing a substrate; The insulating layer includes a first substrate portion, a second substrate portion, and a covering portion, and the step of forming the insulating layer having the conductive hole and the heating element around the outer periphery of the temperature-controlled oscillator chip and the crystal unit includes: a sub-step of forming the first substrate portion having the first portion of the second heating element on the substrate and disposing the crystal unit on the first substrate portion; forming a second substrate portion on the first substrate portion, the second substrate portion having the first heating element and a second portion of the second heating element; a sub-step of providing the crystal unit on the second substrate portion; a sub-step of forming a covering portion on the second substrate portion, the covering portion having the third portion of the second heating element and the through hole; wherein the first substrate portion, the second substrate portion, and the covering portion are all formed by a semiconductor deposition process; The method for manufacturing a thermostatic crystal oscillator according to claim 6 , further comprising the step of removing the substrate.

8. 6. An electronic device comprising a circuit board on which the constant temperature crystal oscillator according to claim 1 is mounted.

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