Semiconductor devices and equipment

Abstract

To provide a semiconductor device that, even when a connection failure occurs in a substrate connection part of the semiconductor device, can continue imaging processing.SOLUTION: A semiconductor has a plurality of laminated substrates including a first substrate and a second substrate. The first substrate has a pixel part in which a plurality of pixels are arranged. The second substrate has a control circuit that controls the semiconductor device. The first substrate further has a detection circuit that detects a connection state of a connection part of the first substrate and the second substrate.SELECTED DRAWING: Figure 1

Description

[Technical Field]

[0001] The present invention relates to a technique for remedying poor connections between substrates in a semiconductor device. [Background technology]

[0002] A manufacturing method for image sensors has been proposed in which the imaging section and logic section of the image sensor are created on separate boards, and these boards are then stacked to complete a stacked image sensor. By stacking boards, the number of signals communicating between boards can be significantly increased, which in turn increases the amount of data transferred between boards, resulting in a highly functional, high-quality image sensor.

[0003] While stacked image sensors have these advantages, they also have issues with the reliability and durability of the connections between the substrates. Specifically, connection failures can occur at the substrate connections after the substrates are stacked, resulting in a decrease in yield.

[0004] Conventionally, a timing improvement method described in Patent Document 1 is known as a technique for eliminating timing violations in signal transmission between substrates in a stacked image sensor. [Prior art documents] [Patent documents]

[0005] [Patent Document 1] Japanese Patent Application Laid-Open No. 2014-17834 Summary of the Invention [Problem to be solved by the invention]

[0006] However, the method described in Patent Document 1 is a method for improving the timing of signal transmission, and is unable to deal with connection failures that occur in the board connections.

[0007] The present invention has been made in consideration of the above-mentioned problems, and its purpose is to provide a semiconductor device that can detect whether the connection state of a substrate connection portion in the semiconductor device does not satisfy a predetermined state. [Means for solving the problem]

[0008] The semiconductor device according to the present invention is a semiconductor device in which a plurality of substrates including a first substrate and a second substrate are stacked, the first substrate having a pixel portion in which a plurality of pixels are arranged, the second substrate having a control circuit for controlling the semiconductor device, the first substrate further having a detection portion for detecting a connection state of a connection portion between the first substrate and the second substrate, and a control signal from the second substrate transmitted to the first substrate via the connection portion when a result of the detection indicates a fault. A control signal for a pixel row in which a failure is detected by the detection unit From the first control signal The control signals for other pixel rows are The present invention is characterized by including a switching circuit for switching to the second control signal. [Effects of the Invention]

[0009] According to the present invention, it is possible to detect when the connection state of the board connection portion does not satisfy a predetermined state. [Brief explanation of the drawings]

[0010] [Figure 1] 1 is a diagram showing the configuration of a stacked image sensor according to a first embodiment of the present invention. [Figure 2] FIG. 2 is a diagram showing the configuration of a pixel according to the first embodiment. [Figure 3] FIG. 4 is a waveform diagram of an electronic shutter operation in the first embodiment. [Figure 4] FIG. 2 is a diagram showing the configuration of a signal setting circuit according to the first embodiment. [Figure 5] FIG. 2 is a diagram showing the configuration of a failure detection circuit according to the first embodiment. [Figure 6] FIG. 2 is a diagram showing the configuration of a signal generating circuit according to the first embodiment. [Figure 7] 5 is a flowchart showing the procedure of a recovery process for a connection failure in the first embodiment. [Figure 8] FIG. 4 is a waveform diagram of an electronic shutter operation in the first embodiment. [Figure 9] FIG. 10 is a waveform diagram of an electronic shutter operation in the second embodiment. [Figure 10] FIG. 10 is a diagram showing the configuration of a signal generating circuit according to a second embodiment. [Figure 11] FIG. 10 is a waveform diagram of an electronic shutter operation in the second embodiment. [Figure 12] FIG. 10 is a diagram showing the configuration of a stacked image sensor according to a third embodiment. [Figure 13] FIG. 10 is a diagram showing the configuration of a signal setting circuit according to a third embodiment. [Figure 14] FIG. 10 is a diagram showing the configuration of a failure detection circuit according to a third embodiment. [Figure 15] FIG. 1 is a diagram showing the configuration of a device including a stacked image sensor. DETAILED DESCRIPTION OF THE INVENTION

[0011] Hereinafter, embodiments will be described in detail with reference to the accompanying drawings. Note that the following embodiments do not limit the scope of the invention claimed. Although multiple features are described in the embodiments, not all of these multiple features are necessarily essential to the invention, and multiple features may be combined arbitrarily. Furthermore, in the accompanying drawings, the same reference numerals are used to designate the same or similar components, and redundant explanations will be omitted.

[0012] (First embodiment) In this embodiment, an example will be described in which, in a stacked image sensor constructed by stacking substrates, if a failure occurs at a connection point that transmits a row reset signal or a transfer signal between substrates, the failed location is detected and the transmission failure of the row reset signal and the transfer signal is corrected.

[0013] [Device configuration example] Fig. 1 is a diagram showing the configuration of a stacked image sensor 180 according to a first embodiment of the present invention. In Fig. 1, the stacked image sensor 180 is a CMOS image sensor that has a pixel substrate 101 (first substrate) on which pixels are arranged two-dimensionally, and a control substrate 100 (second substrate) that generates pixel control signals, and is configured by stacking these substrates. The pixel control signals generated by the control substrate 100 are transmitted to the pixel substrate 101 via the connection between the substrates.

[0014] Although two substrates are stacked in this embodiment, the number of substrates is not limited to two, and three or more substrates may be stacked.

[0015] The control board 100 has a control circuit 160 that controls connection fault testing of the board connection parts, a signal setting circuit 110 that sets test signals to shutter signal groups 111, 112, and 113 described later, and a column readout circuit 150 that converts pixel data output from a pixel block (pixel section) 140 described later into digital values.

[0016] The control circuit 160 receives as input signals a power-on reset signal 102, a clock 103, a scan chain 107 and a failure detection signal 122 output from a failure detection circuit 120 (detection circuit) described below. The control circuit 160 outputs as output signals a test end signal 104, a test result signal 105 notifying the presence or absence of a failure, a failure location signal 170 notifying information that can identify the failure location, a test clock 106, the scan chain 107, a shift enable signal 108, and a test mode signal 109. The control circuit 160 also controls the entire stacked image sensor 180.

[0017] The signal setting circuit 110 receives as input signals a test clock 106, a scan chain 107, a shift enable signal 108, and a test mode signal 109 output from the control circuit 160. The signal setting circuit 110 outputs as output signals a group of shutter signals 111, 112, and 113, and the scan chain 107.

[0018] The pixel substrate 101 has a failure detection circuit 120 that detects connection failures in the signal paths of the shutter signal groups 111, 112, and 113, a signal generation circuit 130 that generates signals to control the pixel blocks 140, and the pixel blocks 140 that convert light into electric charges.

[0019] The failure detection circuit 120 receives as input signals the test clock 106, shift enable signal 108, test mode signal 109 output from the control circuit 160, shutter signal groups 111, 112, and 113 output from the signal setting circuit 110, and scan chain 107. The failure detection circuit 120 outputs as output signals the shift enable signal 108, scan chain 107, shutter signal groups 111, 112, and 113, and shutter control signal group 121 corresponding to the shutter signal groups.

[0020] The signal generating circuit 130 receives, as input signals, the shutter signals 111, 112, and 113 and the shutter control signal group 121 output from the failure detecting circuit 120.

[0021] The pixel block 140 receives as input signals the shutter signals 111, 112, and 113 output from the signal generating circuit 130. The pixel block 140 also has a plurality of column signal lines 141 as signal lines for outputting output signals.

[0022] A plurality of column signal lines 141 are arranged for each of the readable columns of the pixel block 140, and electrical signals read from the pixels are output as pixel data. The pixel data output from the pixel block 140 is input to a column readout circuit 150 via the column signal lines 141 and converted into a digital value.

[0023] The shutter signals 111, 112, and 113 output from the signal setting circuit 110 are signals transmitted across the control substrate 100 and the pixel substrate 101, and are signals related to pixel shutter operations and pixel readout operations. The shutter signal 111 is a row reset signal (hereinafter, the shutter signal 111 will be referred to as the row reset signal), and the shutter signal 112 is a transfer signal (hereinafter, the shutter signal 112 will be referred to as the transfer signal), and are used for electronic shutter operations of the pixels. The shutter signal 113 is a row selection signal (hereinafter, the shutter signal 113 will be referred to as the row selection signal), and is used for pixel signal readout. The row reset signal 111, transfer signal 112, and row selection signal 113 are a signal group used for shutter control of the pixel block 140 and pixel data readout control.

[0024] [Electronic Shutter Operation of Pixel Block 140] The electronic shutter operation and pixel signal readout operation of the pixel block 140 in this embodiment will be described with reference to FIGS.

[0025] In FIG. 2, pixels 200 and 210 indicate two adjacent pixels (two adjacent pixel rows) within pixel block 140.

[0026] The row reset signal 111m indicates a signal that resets the mth row of the pixel block 140 in the shutter signal group described above, and similarly, the row reset signal 111m+1 indicates a signal that resets the m+1th row.

[0027] Transfer signal 112m indicates a signal that transfers a pixel signal of the mth row of pixel block 140 in the shutter signal group described above, and similarly, transfer signal 112m+1 indicates a signal that transfers a pixel signal of the m+1th row.

[0028] The row selection signal 113m indicates a signal that selects the mth row of the pixel block 140 in the shutter signal group described above, and similarly, the row selection signal 113m+1 indicates a signal that selects the m+1th row.

[0029] 2, photodiodes (hereinafter referred to as PDs) 201 and 211, which are photoelectric conversion units, receive light and generate electric charges. The electric charges accumulated in the PDs 201 and 211 are transferred to floating diffusion units (hereinafter referred to as FD units) 202 and 212, which will be described later, when transfer signals 112m and 112m+1 go high.

[0030] The FD units 202 and 212 are components capable of holding the charges transferred from the PDs, and hold the charges while the row reset signals 111m and 111m+1 are low, and clear the held charges when they become high. The charges held in the FD units 202 and 212 are output as electrical signals to the column signal line 141 when the row selection signals 113m and 113m+1 become high.

[0031] 3 shows the operation waveforms of the electronic shutters of the aforementioned pixel 200 and pixel 210, with time passing from left to right. Timings 300 to 306 indicate the synchronization timing of the horizontal synchronization signal of the stacked image sensor 180. Shutter signal groups 111, 112, and 113 perform shutter operations in synchronization with timings 300 to 306.

[0032] At timing 300, the row reset signals 111m and 111m+1 are at a high level, and the charges present in the FD sections 202 and 212 are cleared.

[0033] When the transfer signal 112m of the pixel 200 goes High between timings 300 and 301, the charge accumulated in the PD 201 is transferred to the FD unit 202 and cleared. When the transfer signal 112m changes to Low, the PD 201 starts accumulating charge again. Between timings 303 and 306, the row reset signal 111m goes Low, and between timings 304 and 305, the row selection signal 113m goes High and the transfer signal 112m goes High. As a result, the charge accumulated in the photodiode 201 is transferred to the FD unit 202 and output to the column signal line 141 as an electrical signal.

[0034] In a CMOS image sensor, the column signal lines 141 are generally shared by each row, so that pixel signals are read out row by row, and pixel signals in the (m+1)th row are read out after the mth row pixel signals have been read out. Therefore, the row selection signal 113m+1 is controlled to be High between timings 305 and 306 so that the period when the row selection signal 113m is High and the period when the row selection signal 113m+1 is High do not overlap.

[0035] This makes it possible to read out consecutive pixels 200 and 210. By performing this series of operations for all rows of the pixel block 140, it becomes possible to read out all pixel data from the pixel block 140.

[0036] In this embodiment, the pixel signals of the pixel block 140 are read from the bottom row to the top row, but the read direction is not limited to this. For example, the pixel signals of the pixel block 140 may be read from the top row to the bottom row.

[0037] [Configuration of signal setting circuit 110] The configuration of the signal setting circuit 110 in the first embodiment will be described using Fig. 4. Note that blocks equivalent to those in Figs. 1 to 3 are given the same reference numerals and descriptions thereof will be omitted. Fig. 4 shows the configuration of the signal setting circuit 110 corresponding to the m-th row and the (m+1)-th row of the pixel block 140.

[0038] In FIG. 4, clock switching unit 401 is a circuit that switches between the system clock and test clock 106, and is controlled to select test clock 106 when test mode signal 109 is High.

[0039] The scan switching unit 402 is a circuit that switches between the scan chain 107 and the function logic, and is controlled to select the scan chain 107 when the shift enable signal 108 is High.

[0040] The flip-flop 411m is a flip-flop that outputs a row reset signal 111m that resets the pixel block in the mth row, and latches the signal output from the scan switching unit 402 in synchronization with the clock output from the clock switching unit 401.

[0041] The flip-flop 412 m is a flip-flop that outputs the transfer signal 112 m of the pixel block in the mth row, and latches the signal output from the scan switching unit 402 in synchronization with the clock output from the clock switching unit 401 .

[0042] The flip-flop 413 m is a flip-flop that outputs the row selection signal 113 m of the pixel block in the mth row, and latches the signal output from the scan switching unit 402 in synchronization with the clock output from the clock switching unit 401 .

[0043] Similarly, flip-flop 411m+1 is a flip-flop that outputs a row reset signal 111m+1 that resets the pixel block in the (m+1)th row, and latches the signal output from scan switching unit 402 in synchronization with the clock output from clock switching unit 401.

[0044] The flip-flop 412m+1 is a flip-flop that outputs the transfer signal 112m+1 of the pixel block in the (m+1)th row, and latches the signal output from the scan switching unit 402 in synchronization with the clock output from the clock switching unit 401.

[0045] The flip-flop 413m+1 is a flip-flop that outputs the row selection signal 113m+1 of the pixel block in the (m+1)th row, and latches the signal output from the scan switching unit 402 in synchronization with the clock output from the clock switching unit 401.

[0046] The scan chain 107 connects the flip-flops 411m, 412m, 413m, 411m+1, 412m+2, and 413m+3 successively via the scan switching unit 402.

[0047] The row reset signals 111m and 111m+1, transfer signals 112m and 112m+1, and row selection signals 113m and 113m+1 output from the signal setting circuit 110 are transmitted to the pixel substrate 101 across the connection between the substrates.

[0048] 4 shows an example of the configuration of the signal setting circuit 110 corresponding to the mth row and the (m+1)th row of the pixel block 140. However, the configuration of this signal setting circuit 110 is not limited to the mth row and the (m+1)th row, and there are as many similar circuits as necessary for shutter control of the pixel block 140 and reading out of pixel data.

[0049] [Configuration of the failure detection circuit 120] The configuration of the failure detection circuit 120 in the first embodiment will be described with reference to Fig. 5. Note that blocks equivalent to those in Figs. 1 to 4 are given the same reference numerals and descriptions thereof will be omitted.

[0050] FIG. 5 is a diagram showing the configuration of the failure detection circuit 120 corresponding to the mth row and the (m+1)th row of the pixel block 140. As shown in FIG.

[0051] 5, clock gating unit 501 is a circuit that switches between issuing and stopping test clock 106. Clock gating unit 501 is controlled so that test clock 106 is issued when test mode signal 109 is High, and the clock is stopped when test mode signal 109 is Low.

[0052] The scan switching unit 502 is a circuit that switches between the scan chain 107, the row reset signal 111, the transfer signal 112, and the row selection signal 113, and is controlled to select the scan chain 107 when the shift enable signal 108 is high.

[0053] The flip-flop 511m is a flip-flop that latches the row reset signal 111m that resets the pixel block in the mth row, and latches the signal output from the scan switching unit 502 in synchronization with the clock output from the clock gating unit 501.

[0054] The flip-flop 512 m is a flip-flop that latches the transfer signal 112 m of the pixel block in the mth row, and latches the signal output from the scan switching unit 502 in synchronization with the clock output from the clock gating unit 501 .

[0055] The flip-flop 513 m is a flip-flop that latches the row selection signal 113 m of the pixel block in the mth row, and latches the signal output from the scan switching unit 502 in synchronization with the clock output from the clock gating unit 501 .

[0056] Similarly, flip-flop 511m+1 is a flip-flop that latches a row reset signal 111m+1 that resets the pixel block in the (m+1)th row, and latches the signal output from the scan switching unit 502 in synchronization with the clock output from the clock gating unit 501.

[0057] The flip-flop 512m+1 is a flip-flop that latches the transfer signal 112m+1 of the pixel block in the (m+1)th row, and latches the signal output from the scan switching unit 502 in synchronization with the clock output from the clock gating unit 501.

[0058] The flip-flop 513m+1 is a flip-flop that latches the row selection signal 113m+1 of the pixel block in the (m+1)th row, and latches the signal output from the scan switching unit 502 in synchronization with the clock output from the clock gating unit 501.

[0059] The scan chain 107 connects the flip-flops 511m, 512m, 513m, 511m+1, 512m+2, and 513m+3 successively via the scan switching unit 502.

[0060] The shutter control signal 121m+1 is a signal obtained by passing the outputs of the flip-flop 511m+1 and the flip-flop 512m+1 through an OR circuit, and is sent to the signal generation circuit 130. The shutter control signal 121m+1 is output as the logical sum of the outputs of the flip-flop 511m+1 and the flip-flop 512m+1 so that the signal goes High when a connection failure occurs in either the transfer signal 112m+1 or the row reset signal 111m+1.

[0061] Similarly, the shutter control signal 121m is a signal obtained by passing the outputs of the flip-flop 511m and the flip-flop 512m through an OR circuit, and is sent to the signal generation circuit 130. The shutter control signal 121m is output as the logical sum of the outputs of the flip-flop 511m and the flip-flop 512m so that the signal goes High when a connection failure occurs in either the transfer signal 112m or the row reset signal 111m.

[0062] The failure detection circuit unit 530m+1 is a circuit that determines whether the values of the flip-flops 511m+1, 512m+1, and 513m+1 match expected values, and outputs Low if they match the expected values, and outputs High if they do not match the expected values. In this embodiment, the expected values are that the output values of the flip-flops 511m+1, 512m+1, and 513m+1 are all Low or all High. Therefore, the failure detection circuit unit 530m+1 outputs Low if the values of the flip-flops 511m+1, 512m+1, and 513m+1 are all Low or all High, and outputs High if they are any other value.

[0063] Similarly, failure detection circuit unit 530m is a circuit that determines whether the values of flip-flops 511m, 512m, and 513m match expected values, outputting a low if they match the expected values and a high if they do not. Failure detection signal 122 is a signal obtained by taking the logical sum of the signals output from failure detection circuit unit 530m+1 and failure detection circuit unit 530m, and is a failure detection signal that goes high when failure detection circuit unit 530m+1 or 530m detects a mismatch with the expected value. Note that failure detection signal 122 is a signal obtained by taking the logical sum of the values of the failure detection circuits of all rows of pixel block 140, not just failure detection circuit unit 530m+1 and failure detection circuit unit 530m.

[0064] The row reset signals 111m and 111m+1, transfer signals 112m and 112m+1, and row selection signals 113m and 113m+1 input to the failure detection circuit 120 are output from the signal setting circuit 110 and are received by the failure detection circuit 120 across the connection between the substrates. The failure detection circuit 120, which is a detection circuit, is provided on the pixel substrate 101, which is the first substrate. This makes it possible to detect the input state of the signal output from the control substrate 100, which is the second substrate, to the pixel substrate 101.

[0065] 5 shows an example configuration of the failure detection circuit 120 corresponding to the mth row and the (m+1)th row of the pixel block 140. However, the configuration of this failure detection circuit 120 is not limited to the mth row and the (m+1)th row, and there are as many similar circuits as necessary for shutter control of the pixel block 140 and reading of pixel data.

[0066] [Configuration of signal generation circuit 130] The configuration of the signal generating circuit 130 in the first embodiment will be described with reference to Fig. 6. Note that blocks equivalent to those in Figs. 1 to 5 are given the same reference numerals and descriptions thereof will be omitted.

[0067] FIG. 6 is a diagram showing the configuration of the signal generation circuit (switching circuit) 130 corresponding to the mth row and the (m+1)th row of the pixel block 140. As shown in FIG.

[0068] 6, the row reset signal switching unit 601 is a circuit that switches between the row reset signal 111m+1 and the row reset signal 111m according to the value of the shutter control signal 121m+1 output from the failure detection circuit 120. The row reset signal switching unit 601 outputs the row reset signal 111m+1 when the value of the shutter control signal 121m+1 is Low, and switches to output the row reset signal 111m of the adjacent row when the value of the shutter control signal 121m+1 is High.

[0069] The transfer signal switching unit 602 is a circuit that switches between the transfer signal 112m+1 and the transfer signal 112m according to the value of the shutter control signal 121m+1 output from the failure detection circuit 120. The transfer signal switching unit 602 outputs the transfer signal 112m+1 when the value of the shutter control signal 121m+1 is Low, and switches to output the transfer signal 112m of the adjacent row when the value of the shutter control signal 121m+1 is High.

[0070] Similarly, the row reset signal switching unit 611 is a circuit that switches between the row reset signal 111m and the row reset signal 111m-1 in accordance with the value of the shutter control signal 121m output from the failure detection circuit 120. The row reset signal switching unit 611 outputs the row reset signal 111m when the value of the shutter control signal 121m is Low, and switches to output the row reset signal 111m-1 of the adjacent row when the value of the shutter control signal 121m is High. Here, the row reset signal 111m-1 is a row reset signal used to reset the (m-1)th row of the pixel block 140.

[0071] The transfer signal switching unit 612 is a circuit that switches between the transfer signal 112m and the transfer signal 112m-1 in accordance with the value of the shutter control signal 121m output from the failure detection circuit 120. The transfer signal switching unit 612 outputs the transfer signal 112m when the value of the shutter control signal 121m is Low, and outputs the transfer signal 112m-1 of the adjacent row when the value of the shutter control signal 121m is High. Here, the transfer signal 112m-1 is a transfer signal used by the pixels in the (m-1)th row of the pixel block 140.

[0072] 6 shows an example configuration of the signal generation circuit 130 corresponding to the mth row and the (m+1)th row of the pixel block 140. However, the configuration of this signal generation circuit 130 is not limited to the mth row and the (m+1)th row, and there are as many similar circuits as necessary for shutter control of the pixel block 140 and reading out of pixel data.

[0073] [Flow of repair process for connection failures in board-to-board connections] The flow of the process for relieving a connection failure in a connection between boards in the first embodiment will be described with reference to FIGS.

[0074] FIG. 7 is a flowchart showing the flow of the relief process in this embodiment, and FIG. 8 is a timing chart that complements the explanation of the flowchart in FIG.

[0075] The test for failures in the connections between the substrates may be performed when the stacked image sensor 180 is powered on, and the results may be stored in a volatile memory or the like, or may be performed during testing in the manufacture of the stacked image sensor 180. By performing the test during manufacturing, it is possible to prevent shipment if the connection state between the substrates does not satisfy a predetermined state. In such a case, the semiconductor device does not need to have a switching circuit. Furthermore, if the connection state between the substrates does not satisfy a predetermined state is remedied by a switching circuit, the test results (detection results) may be stored in a non-volatile memory or the like.

[0076] In FIG. 7, step S700 is the process start step, where the clock 103 is generated and the power-on reset signal 102 is asserted.

[0077] Step S701 is a test pattern setting step. In step S701, the control circuit 160 outputs the test clock 106, sets the test mode signal 109 to High, sets the shift enable signal 108 to High, and simultaneously outputs test data to the scan chain 107. This sets the test data to the flip-flops 411m, 412m, 413m, 411m+1, 412m+1, and 413m+1 in the signal setting circuit 110. In this embodiment, the values set to the flip-flops 411m, 412m, 413m, 411m+1, 412m+1, and 413m+1 are all Low or all High.

[0078] Step S702 is a step in which the failure detection circuit 120 receives the test pattern set in step S701. In step S702, the control circuit 160 stops the test clock 106 and sets the shift enable signal 108 to Low. Next, by transmitting one pulse of the test clock 106, the test data set in the flip-flops 411m, 412m, 413m, 411m+1, 412m+1, and 413m+1 in the signal setting circuit 110 are captured by the flip-flops 511m, 512m, 513m, 511m+1, 512m+1, and 513m+1 in the failure detection circuit 120.

[0079] The values captured by flip-flops 511m, 512m, 513m, 511m+1, 512m+1, and 513m+1 are expected to be the same as the values set in flip-flops 411m, 412m, 413m, 411m+1, 412m+1, and 413m+1. Therefore, the expected values captured by flip-flops 511m, 512m, 513m, 511m+1, 512m+1, and 513m+1 are all Low or all High.

[0080] In this embodiment, when the values captured by the flip-flops 511m, 512m, 513m, 511m+1, 512m+1, and 513m+1 are all Low or all High, the failure detection circuit units 530m and 530m+1 output Low, and the failure detection signal 122 also goes Low. Also, when the values captured by the flip-flops 511m, 512m, 513m, 511m+1, 512m+1, and 513m+1 are not all Low or all High, the failure detection circuit unit 530m or 530m+1 outputs High, and the failure detection signal 122 also goes High.

[0081] Step S703 is a step for determining whether or not there is a malfunction. If the malfunction detection signal 122 is Low in step S703, the control circuit 160 determines that there is no malfunction in the shutter signal group across the connection between the substrates, and proceeds to step S707. On the other hand, if the malfunction detection signal 122 is High, it determines that there is a malfunction in the shutter signal group across the connection between the substrates, and proceeds to step S704.

[0082] Step S704 is a step for reading out the test results. If the failure detection signal 122 is High, the control circuit 160 sets the shift enable signal 108 to High and transmits the test clock 106. The test data captured by the flip-flops 511m, 512m, 513m, 511m+1, 512m+1, and 513m+1 in the failure detection circuit 120 is read out to the control circuit 160 through the scan chain 107.

[0083] Step S705 is a step for identifying the location of the failure from the test data read in step S704. In step S705, the control circuit 160 compares the test data read in step S704 with expected values and identifies bits that do not match the expected values.

[0084] In this embodiment, the expected values are all Low or all High. Therefore, the control circuit 160 compares the test data read in step S704 with the expected values and identifies the location of the data that differs from the expected values in the test data read in step S704, thereby identifying the location where the failure has occurred.

[0085] As an example of a method for identifying the location of the fault, a method for identifying the location of the fault by performing an exclusive OR on the test data read out in step S704 and the expected value on a bit-by-bit basis is conceivable. Note that the method for identifying the location of the fault is not limited to the method of this embodiment, and other methods may also be used.

[0086] Step S706 is a step for determining whether the fault location in the signal transmission path connecting the boards identified in step S705 can be corrected. In this embodiment, if the row reset signal 111 or the transfer signal 112 has a fault in only one row or has faults in multiple non-consecutive rows, the fault location can be corrected.

[0087] In step S706, if the faulty location in the connection between the boards meets the above conditions, the control circuit 160 determines that the faulty row reset signal 111 or transfer signal 112 can be corrected, and proceeds to step S707. If the above conditions are not met, the control circuit 160 determines that the faulty row reset signal 111 or transfer signal 112 cannot be corrected, and proceeds to step S707. Note that the conditions under which correction is possible vary depending on the system configuration, and are not limited to the above conditions.

[0088] Step S707 is a step for setting correction by switching to the shutter signal of an adjacent row if it is determined in step S706 that the connection fault location can be corrected. For example, if the row reset signal 111m+1 of the (m+1)th row is faulty, the control circuit 160 sets the shift enable signal 108 to High and transmits the test clock 106. Also, for the scan chain 107, the control circuit 160 sets the flip-flop 511m+1 in the fault detection circuit 120 to High. When the flip-flop 511m+1 in the fault detection circuit 120 is set to High, the shutter control signal 121m+1 becomes High. Then, the signal generation circuit 130 switches from the faulty row reset signal 111m+1 to the row reset signal 111m of the adjacent row.

[0089] If it is determined in step S703 that there is no failure, then in step S707, Low is set to all flip-flops in the failure detection circuit 120. After step S707 is completed, the process proceeds to step S708.

[0090] Step S708 is a step for performing test end processing. In step S708, control circuit 160 asserts test end signal 104 indicating that the test has ended, and outputs fault detection signal 122 as test result signal 105. Also, information on the bit string that does not match the expected value identified in step S705 is output to the outside of stacked image sensor 180 as fault location notification signal 170. Thereafter, test mode signal 109 is set to Low, and processing ends.

[0091] When test mode signal 109 is set to low, clock gating 501 stops clock generation. As a result, the flip-flop in fault detection circuit 120 continues to hold its value even during normal operation. By outputting the fault location notification signal 170 to the outside of stacked image sensor 180, it is possible to perform fault recovery using correction such as image complementation processing on the system side.

[0092] FIG. 8 is a timing chart showing the waveform of the shutter signal when the processing of this embodiment is applied.

[0093] 8, timings 901 to 907 indicate the synchronization timing of the horizontal synchronization signal of the CMOS sensor, and the signal waveforms show the waveforms when the row reset signal 111m+1 of the (m+1)th row fails and the shutter signal is switched to the row reset signal 111m of the (m+1)th row and the transfer signal 112m.

[0094] Since the row reset signal and transfer signal operate simultaneously on the mth and m+1th rows, transfer signals 112m and 112m+1 change simultaneously between timings 901 and 902, and accumulation in photodiodes 201 and 211 begins.

[0095] Between timings 904 and 907, the row reset signals 111m and 111m+1 go low at the same time. Between timings 905 and 906, the transfer signals 112m and 112m+1 go high at the same time, thereby transferring the charges accumulated in the photodiodes 201 and 211 to the FD units 202 and 212. Between timings 905 and 906, the row selection line 113m goes high, and the charges accumulated in the FD unit 202 are read out as an electrical signal to the column signal line 141. Next, between timings 906 and 907, the row selection line 113m+1 goes high, and the charges accumulated in the FD unit 212 are read out as an electrical signal to the column signal line 114. Because the readout periods of the row selection signal 113 are different for the mth row and the (m+1)th row, it becomes possible to read out pixel data for the (m+1)th row.

[0096] In this embodiment, a flip-flop in the fault detection circuit 120 is used as a means for retaining the fault location, but if an inter-board signal connection test is not performed when the boards are started up, it is clear that the same processing can be performed by writing the fault location to non-volatile memory.

[0097] As described above, if a failure occurs in the signal path of the row reset signal 111 or transfer signal 112, which are signals connecting between substrates, the location of the failure can be detected and switched to the signal of an adjacent row, thereby making it possible to repair the failure of the row reset signal 111 and transfer signal 112.

[0098] Furthermore, in this embodiment, an example of repairing a fault in the row reset signal 111 and the transfer signal 112 has been shown, but the present invention is not limited to repairing only the row reset signal 111 and the transfer signal 112. For example, in the case of a CMOS image sensor having pixels with different column signal line paths, it is clear that a connection fault in the row selection signal 113 can be repaired in a similar manner.

[0099] As described above, according to this embodiment, it is possible to detect whether the connection state of the connection between the substrates does not satisfy a predetermined state. Furthermore, even if the connection state does not satisfy the predetermined state, processing can be continued by repairing the signal passing through the connection. Note that, although the presence or absence of a connection failure is detected in this embodiment, this is not limiting. That is, the degree of the connection state of the connection between the substrates (for example, the resistance value of the electrical path) may also be detected. If the semiconductor device includes a switching circuit, the switching circuit switches the control signal according to the result of this detection. For example, if a resistance value is detected as an example of detection, the switching circuit may switch the control signal depending on whether the resistance value is higher than a predetermined resistance value.

[0100] (Second embodiment) In this embodiment, only some of the configurations are different from those of the first embodiment, so a description of the same components will be omitted and only the different components will be described in detail.

[0101] When the reset release period of a row reset signal is the minimum period of a horizontal synchronization signal, a fault in a row reset signal or a transfer signal, which is a signal connecting substrates, may not be remedied by simply switching the shutter signal of an adjacent row. In this embodiment, a method for remedying a row reset signal or a transfer signal even when the reset release period of a row reset signal is the minimum period of a horizontal synchronization signal, will be described.

[0102] Figure 9 shows the waveforms obtained when the row reset signal 111m+1 and transfer signal 112m+1 of the (m+1)th row are replaced with the row reset signal 111m and transfer signal 112m of the mth row when the reset release period of the row reset signal is the minimum period of the horizontal synchronization signal.

[0103] 9, timings 1011 to 1017 indicate the synchronization timings of the horizontal synchronization signals of the CMOS sensor. The shutter signal group performs shutter operations in synchronization with the horizontal synchronization signals at timings 1011 to 1017.

[0104] 9, period 1001 indicates the period during which pixel data for the (m+1)th row is read out. During period 1001, when row selection signal 113m+1 for the (m+1)th row is High, row reset signal 111m+1 is High (reset state). Therefore, in the case of FIG. 9, in which row reset signal 111m+1 and transfer signal 112m+1 for the (m+1)th row are replaced with row reset signal 111m and transfer signal 112m for the mth row, all pixel data is cleared when pixel data for the (m+1)th row is read out, and reading of the pixel data is not possible.

[0105] Fig. 10 is a diagram showing the configuration of the signal generation circuit 130 corresponding to the mth and (m+1)th rows of the pixel block 140 in this embodiment. In Fig. 10, reference numeral 1101 denotes a delay element.

[0106] By inserting a delay element 1101 before the row reset signal switching unit 601 and the transfer signal switching unit 602, the row reset signal 111m and transfer signal 112m of the adjacent row are delayed when the signals are switched, thereby generating signals that enable pixel data to be read. In this embodiment, the delay amount of the delay element 1101 is set to the minimum period of the horizontal synchronization signal.

[0107] FIG. 11 is a diagram showing waveforms obtained when the row reset signal 111m+1 and transfer signal 112m+1 in the (m+1)th row in the configuration of FIG. 10 are replaced with the row reset signal 111m and transfer signal 112m in the mth row.

[0108] 11, period 1201 indicates the delay time generated by delay element 1101, which delays row reset signal 111m and transfer signal 112m by the minimum period of the horizontal synchronization signal. This allows row reset signal 111m+1 to be set to Low while row selection signal 113m+1 is High, allowing pixel data to be read out.

[0109] As a result, if a connection failure occurs at the connection between the substrates, even if the reset release period of the row reset signal is the minimum period of the horizontal synchronization signal, the failure of the row reset signal or transfer signal connecting the substrates can be repaired, and the imaging process can be continued.

[0110] (Third embodiment) In this embodiment, only some of the configurations are different from those of the first embodiment, so a description of the same components will be omitted and only the different components will be described in detail.

[0111] A connection failure may occur in a signal path connecting the substrates during normal operation. In this embodiment, a method will be described in which, even if a failure occurs in a path of a row reset signal or a transfer signal connecting the substrates during normal operation, the failure can be detected and the row reset signal or the transfer signal can be repaired.

[0112] 12 is a diagram showing the configuration of a stacked image sensor 190 according to the third embodiment. In FIG. 12, a parity bit signal group 1402 is output from a signal setting circuit 110 and input to a failure detection circuit 120 across a connection between substrates.

[0113] FIG. 13 is a diagram showing the configuration of the signal setting circuit 110 corresponding to the mth row and the (m+1)th row of the pixel block 140 in this embodiment.

[0114] During normal function operation, flip-flops 411m, 412m, and 413m synchronize with the system clock to change the values of shutter signals 111m, 112m, and 113m at any timing required for image readout. Similarly, flip-flops 411m+1, 412m+1, and 413m+1 synchronize with the system clock to change the values of shutter signals 111m+1, 112m+1, and 113m+1 at any timing required for image readout.

[0115] 13, a parity bit generation circuit 1401m takes the exclusive OR of the shutter signals 111m, 112m, and 113m to generate a parity bit 1402m. The parity bit 1402m generated by the parity bit generation circuit 1401m is output from the signal setting circuit 110 and transmitted across the boards to the failure detection circuit 120. The value of the parity bit 1402m changes sequentially in response to changes in the shutter signals 111m, 112m, and 113m.

[0116] Similarly, the parity bit generation circuit 1401m+1 takes the exclusive OR of the shutter signals 111m+1, 112m+1, and 113m+1 to generate a parity bit 1402m+1. The parity bit 1402m+1 generated by the parity bit generation circuit 1401m+1 is output from the signal setting circuit 110 and transmitted across boards to the failure detection circuit 120. The value of the parity bit 1402m+1 changes sequentially in response to changes in the shutter signals 111m+1, 112m+1, and 113m+1.

[0117] 13 shows an example of the configuration of the signal setting circuit 110 corresponding to the mth row and the (m+1)th row of the pixel block 140. However, the configuration of this signal setting circuit 110 is not limited to the mth row and the (m+1)th row, and there are as many similar circuits as necessary for shutter control of the pixel block 140 and reading out of pixel data.

[0118] FIG. 14 is a diagram showing the configuration of the failure detection circuit 120 corresponding to the mth row and the (m+1)th row of the pixel block 140 in this embodiment.

[0119] 14, the parity check circuit 1501m performs an exclusive OR operation on the shutter signals 111m, 112m, and 113m and the parity bit 1402m. In this embodiment, even parity is used, so when the output signal of the parity check circuit 1501m is Low, no connection failure has occurred in the signal path connecting the substrates of the shutter signals 111m, 112m, and 113m and the parity bit 1402m. On the other hand, when the output signal of the parity check circuit 1501m is High, it can be estimated that a connection failure has occurred in the signal path connecting the substrates of any of the shutter signals 111m, 112m, and 113m and the parity bit 1402m.

[0120] The output signal of the parity check circuit 1501m is input to a flip-flop 1502m. The clock gating circuit 1503m is a circuit that outputs a clock that drives the flip-flop 1502m, and outputs a system clock only when the value of the flip-flop 1502m is Low, and stops the clock when the value of the flip-flop 1502m is High.

[0121] The inverter circuit 1504m is a circuit that inverts the value of the flip-flop 1502m and generates a clock enable signal for the clock gating circuit 1503m. The value of the flip-flop 1502m is output to the signal generating circuit 130 as a shutter control signal 121m.

[0122] By using the above configuration, the flip-flop 1402m latches the value when the parity check circuit 1501m outputs a high signal, and continues to hold the value until the clock is stopped by the clock gating circuit 1503m and the power-on reset signal is next asserted.

[0123] When the signal generating circuit 130 receives the shutter control signal 121m, it performs the operation shown in the first or second embodiment, thereby making it possible to repair the faulty shutter signal.

[0124] The fault detection signal 122 is a fault detection signal that indicates that a connection fault has occurred in the connection between the boards, and is a signal that goes high when an error is detected in the parity check result. This signal is generated by taking the logical sum of the output signals of all the flip-flops 1502.

[0125] The failure detection signal 122 is output to the control circuit 160, and the presence or absence of a failure is notified to a system outside the board as the test result signal 105. By detecting that the value of the test result signal 105 is High in a system outside the board, it is possible to detect that a connection failure has occurred in the connection between the boards. In this way, the system using the stacked image sensor of this embodiment can detect that a connection failure has occurred in the connection between the boards.

[0126] 14 shows an example configuration of the failure detection circuit 120 corresponding to the mth row and the (m+1)th row of the pixel block 140. However, the configuration of this failure detection circuit 120 is not limited to the mth row and the (m+1)th row, and there are as many similar circuits as necessary for shutter control of the pixel block 140 and reading of pixel data.

[0127] As a result, even if a connection failure occurs at a connection between boards during normal operation, the connection failure can be detected and a connection failure signal can be sent to recover, thereby allowing the imaging process to continue.

[0128] In the embodiments of this specification, an example has been described in which a photodiode that accumulates charges generated by light is used as the photoelectric conversion unit. As another example, an avalanche photodiode may be used as the photoelectric conversion unit.

[0129] Furthermore, the embodiments of this specification have been described using an image sensor including a photoelectric conversion unit as an example. As another example, a light-emitting device (display device) in which each pixel includes a light-emitting element may be used. A typical example of such a light-emitting element is an OLED. In a light-emitting device, at least two transistors are arranged in a pixel: a first transistor that supplies current to the light-emitting element, and a second transistor that provides data to the first transistor to control the amount of current supplied. These two transistors are controlled by various signals output from a signal setting circuit 110 of a control substrate 100. These signals are supplied from the control substrate 100 to the pixel substrate 101 via a connection between the substrates. Even in this configuration, by providing the connection between the substrates with the failure detection circuit of the above embodiment, it is possible to detect connection defects around the connection. Furthermore, it is possible to repair such connection defects.

[0130] As described above, each embodiment described in this specification can be applied to semiconductor devices in which multiple substrates are stacked, such as imaging devices such as image sensors, and light-emitting devices such as OLEDs.

[0131] <Other embodiments> With reference to FIG. 15(a), an embodiment of an apparatus 2000 including a semiconductor device 2003 will be described in detail. The semiconductor device 2003 may be a stacked image sensor according to any of the above-described embodiments. The semiconductor device 2003 may include a semiconductor device 2001 and a package 2002 that houses the semiconductor device 2001. The package 2002 may include a base to which the semiconductor device 2001 is fixed, and a lid such as glass that faces the semiconductor device 2001. The package 2002 may further include a bonding member such as a bonding wire or a bump that connects a terminal provided on the base to a terminal (bonding pad) provided on the semiconductor device 2001.

[0132] The device 2000 may include at least one of an optical device 2004, a control device 2005, a processing device 2006, a display device 2007, a storage device 2008, and a mechanical device 2009. The optical device 2004 is, for example, a lens, a shutter, or a mirror. The control device 2005 controls the semiconductor device 2003. The control device 2005 is, for example, a semiconductor device such as an FPGA (Field Programmable Gate Array) or an ASIC (Application Specific Integrated Circuit).

[0133] The processing device 2006 processes the signal output from the semiconductor device 2003. The processing device 2006 is a semiconductor device such as a CPU (Central Processing Unit) or ASIC for configuring an AFE (Analog Front End) or a DFE (Digital Front End). The display device 2007 is an EL (Electro-Luminescence) display device or a liquid crystal display device that displays information (images) obtained by the semiconductor device 2003. The storage device 2008 is a magnetic device or a semiconductor device that stores the information (images) obtained by the semiconductor device 2003. The storage device 2008 is a volatile memory such as an SRAM (Static Random Access Memory) or a DRAM (Dynamic Random Access Memory), or a non-volatile memory such as a flash memory or a hard disk drive.

[0134] The mechanical device 2009 has a moving part or a propulsion part such as a motor or an engine. In the device 2000, a signal output from the semiconductor device 2003 is displayed on a display device 2007, or transmitted to the outside by a communication device (not shown) included in the device 2000. For this purpose, the device 2000 may further include a memory device 2008 and a processing device 2006 in addition to the memory circuit and arithmetic circuit included in the semiconductor device 2003. The mechanical device 2009 may be controlled based on the signal output from the semiconductor device 2003.

[0135] The device 2000 is also suitable for electronic devices such as information terminals with a photographing function (e.g., smartphones and wearable devices) and cameras (e.g., interchangeable lens cameras, compact cameras, video cameras, and surveillance cameras). The mechanical device 2009 in the camera may drive components of the optical device 2004 for zooming, focusing, and shutter operation. Alternatively, the mechanical device 2009 in the camera may move the semiconductor device 2003 for vibration isolation.

[0136] Furthermore, the device 2000 may be transportation equipment such as a vehicle, a ship, or an aircraft. The mechanical device 2009 in the transportation equipment may be used as a moving device. The device 2000 as transportation equipment may transport the semiconductor device 2003 or may assist and / or automate driving (piloting) using a photographing function. The processing device 2006 for assisting and / or automating driving (piloting) may perform processing for operating the mechanical device 2009 as a moving device based on information obtained by the semiconductor device 2003. Alternatively, the device 2000 may be a medical device such as an endoscope, a measuring device such as an analytical distance sensor, an analytical device such as an electron microscope, or an office machine such as a copier.

[0137] 15(b) and 15(c), an embodiment relating to an imaging system and a moving object will be described. FIG. 15(b) shows an example of an imaging system 2010 relating to an in-vehicle camera. The imaging system 2010 includes a photoelectric conversion device 2011. The photoelectric conversion device 2011 may be any of the stacked image sensors of the above-described embodiments. The imaging system 2010 includes an image processing unit 2012, which is a processing device that performs image processing on a plurality of image data acquired by the photoelectric conversion device 2011. The imaging system 2010 also includes a parallax acquisition unit 2013, which is a processing device that calculates parallax (phase difference between parallax images) from the plurality of image data acquired by the photoelectric conversion device 2011. The imaging system 2010 also includes a distance acquisition unit 2014, which is a processing device that calculates a distance to an object based on the calculated parallax, and a collision determination unit 2015, which is a processing device that determines whether or not there is a possibility of a collision based on the calculated distance. Here, the parallax acquisition unit 2013 and the distance acquisition unit 2014 are examples of information acquisition means for acquiring information such as distance information to an object. That is, distance information is information related to parallax, defocus amount, distance to an object, etc. The collision determination unit 2015 may determine the possibility of a collision using any of this distance information. The various processing devices described above may be realized by dedicated hardware or general-purpose hardware that performs calculations based on software modules. Furthermore, the processing devices may be realized by FPGAs, ASICs, etc., or a combination thereof.

[0138] The imaging system 2010 is connected to a vehicle information acquisition device 2016 and can acquire vehicle information such as vehicle speed, yaw rate, and steering angle. The imaging system 2010 is also connected to a control ECU 2017, which is a control device that outputs a control signal to generate a braking force on the vehicle based on the determination result of the collision determination unit 2015. That is, the control ECU 2017 is an example of a mobile object control means that controls a mobile object based on distance information. The imaging system 2010 is also connected to an alarm device 2018 that issues an alarm to the driver based on the determination result of the collision determination unit 2015. For example, if the determination result of the collision determination unit 2015 indicates a high possibility of a collision, the control ECU 2017 performs vehicle control to avoid the collision and mitigate damage by applying the brakes, releasing the accelerator, suppressing engine output, etc. The alarm device 2018 warns the user by sounding an alarm, displaying alarm information on a screen of a car navigation system, etc., or vibrating a seat belt or steering wheel.

[0139] In this embodiment, the surroundings of the vehicle, for example, the front or rear, are imaged by the imaging system 2010. Fig. 15(c) shows the imaging system 2010 when imaging the area in front of the vehicle (imaging range 2019). The vehicle information acquisition device 2016 sends an instruction to operate the imaging system 2010 to perform imaging.

[0140] In the above explanation, an example of control to prevent collision with other vehicles has been described, but the present invention can also be applied to control of automatic driving by following other vehicles, control of automatic driving to prevent deviation from a lane, etc. Furthermore, the imaging system is not limited to vehicles such as automobiles, but can be applied to moving bodies (transportation equipment) such as ships, aircraft, and industrial robots. The moving devices in moving bodies (transportation equipment) are various means of movement such as engines, motors, wheels, and propellers. In addition, the present invention can be applied not only to moving bodies, but also to a wide range of equipment that uses object recognition, such as intelligent transport systems (ITS).

[0141] (Still another embodiment) The present invention can also be realized by supplying a program that realizes one or more of the functions of the above-described embodiments to a system or device via a network or a storage medium, and having one or more processors in the computer of the system or device read and execute the program.The present invention can also be realized by a circuit (e.g., ASIC) that realizes one or more of the functions.

[0142] The invention is not limited to the above-described embodiments, and various changes and modifications can be made without departing from the spirit and scope of the invention. Accordingly, the following claims are appended to apprise the public of the scope of the invention. [Explanation of symbols]

[0143] 100: control board, 101: pixel board, 110: signal setting circuit, 120: failure detection circuit, 130: signal generation circuit, 140: pixel block, 150: column readout circuit, 160: control circuit, 180, 190: stacked image sensor

Claims

1. A semiconductor device in which a plurality of substrates including a first substrate and a second substrate are stacked, the first substrate has a pixel portion in which a plurality of pixels are arranged, the second substrate has a control circuit that controls the semiconductor device; a switching circuit that, when a result of the detection indicates a fault, switches a control signal from the second substrate transmitted to the first substrate via the connection portion from a first control signal that is a control signal for a pixel row in which a fault has been detected by the detection unit to a second control signal that is a control signal for another pixel row.

2. 2. The semiconductor device according to claim 1, wherein the switching circuit switches the control signal for a pixel row in which a failure has been detected by the detection unit to a control signal for an adjacent pixel row.

3. A semiconductor device in which a plurality of substrates including a first substrate and a second substrate are stacked, the first substrate has a pixel portion in which a plurality of pixels are arranged, the second substrate has a control circuit that controls the semiconductor device; a switching circuit that, when a result of the detection indicates a fault, switches a control signal from the second substrate transmitted to the first substrate via the connection portion from a first control signal, which is a control signal for a pixel row in which a fault has been detected by the detection unit, to a second control signal, which is a signal obtained by changing a delay time of a control signal for another pixel row.

4. The semiconductor device according to any one of claims 1 to 3, characterized in that the switching circuit does not switch the control signal from the second substrate transmitted to the first substrate via the connection portion from the first control signal to the second control signal when the result of the detection does not indicate a fault.

5. 5. The semiconductor device according to claim 1, wherein the control circuit outputs a control signal required for switching a signal to the switching circuit in accordance with a result of the detection.

6. 6. The semiconductor device according to claim 1, wherein the control circuit has a function of notifying an external device of the second substrate whether or not the connection portion has a failure.

7. 7. The semiconductor device according to claim 1, wherein the control circuit has a function of notifying information indicating a location of a failure in the connection portion to an outside of the second substrate.

8. 8. The semiconductor device according to claim 1, wherein the control circuit is activated when power is turned on.

9. 9. The semiconductor device according to claim 8, further comprising a volatile memory for storing the result of the detection.

10. 8. The semiconductor device according to claim 1, wherein the control circuit is activated during testing in the manufacture of the semiconductor device.

11. 11. The semiconductor device according to claim 10, further comprising a nonvolatile memory for storing the result of the detection.

12. 12. The semiconductor device according to claim 1, wherein the first substrate has a different readout path for each pixel.

13. 13. The semiconductor device according to claim 1, wherein the pixel comprises a photoelectric conversion portion.

14. 14. The semiconductor device according to claim 13, wherein the photoelectric conversion portion is a photodiode that accumulates charges based on light.

15. 14. The semiconductor device according to claim 13, wherein the photoelectric conversion portion is an avalanche photodiode.

16. 13. The semiconductor device according to claim 1, wherein the pixel comprises a light-emitting element.

17. A semiconductor device according to any one of claims 1 to 16, an optical device corresponding to the semiconductor device; a control device for controlling the semiconductor device; a processing device that processes a signal output from the semiconductor device; a display device that displays information obtained by the semiconductor device; a storage device that stores information obtained by the semiconductor device; and and a mechanical device that operates based on information obtained by the semiconductor device.

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