Detection Equipment

Abstract

This detection device has: a light-receiving element; a filter layer that is superimposed on the light-receiving element and that includes a first color material having a peak transmittance with respect to light of a first wavelength band; and a display panel that is provided atop the filter layer. The filter layer has a peak transmittance of 90% or more, a transmittance of 80% or more at a wavelength of 550 nm, a transmittance of 10% or more at a wavelength of 600 nm, and a transmittance of 10% or less at a wavelength of 680-700 nm.

Description

[Technical Field]

[0001] An embodiment of the present invention relates to a detection device that performs personal authentication by an optical method using a fingerprint.

[0002] In recent years, detection devices have been installed in electronic devices such as smartphones. In order to improve the authentication accuracy under natural light, detection devices require a filter layer to block light that passes through the finger and reaches the sensor. Conventionally, an external IR cut filter has been used as such a filter layer.

[0003] On the other hand, in order to realize a thinner detection device, it is required to form an IR cut filter integrally, rather than using an external IR cut filter. Patent Document 1 discloses an IR cut filter used in a solid-state imaging device or the like.

[0004] In order to achieve both thin film and low cost in detection devices, it is required to realize characteristics equivalent to those of inorganic films by utilizing the film formation process of color filters provided in liquid crystal panels, which has been conventionally used, rather than the deposition process of inorganic films. Patent Document 2 discloses a solid-state imaging device using color filters as filter layers. [Prior art documents] [Patent documents]

[0005] [Patent Document 1] International Patent No. 2019 / 022069 [Patent Document 2] Japanese Patent Application Laid-Open No. 2016-728899 Summary of the Invention [Problem to be solved by the invention]

[0006] However, even if a color filter that is installed on a conventional liquid crystal panel is used as an IR cut filter in a fingerprint detection device, it is not possible to obtain the same sensor characteristics as an external IR cut filter, which has resulted in the problem that the detection device cannot detect fingerprints under natural light.

[0007] Therefore, one object of one embodiment of the present invention is to provide a detection device with improved fingerprint detection accuracy under natural light. [Means for solving the problem]

[0008] A detection device according to one embodiment of the present invention comprises a light receiving element, a filter layer superimposed on the light receiving element and containing a first color material having a peak transmittance for light in a first wavelength band, and a display panel provided on the filter layer, wherein the filter layer has a peak transmittance of 90% or more, a transmittance at a wavelength of 550 nm of 80% or more, a transmittance at a wavelength of 600 nm of 10% or more, and a transmittance at wavelengths of 680 nm to 700 nm of 10% or less. [Brief explanation of the drawings]

[0009] [Figure 1] 1 is a cross-sectional view of a detection device according to one embodiment of the present invention; [Figure 2] FIG. 2 is an enlarged cross-sectional view of a portion of the sensor substrate and the filter layer. [Figure 3] 10 is a graph comparing the spectral characteristics of filter layers using organic resins used in detection devices. [Figure 4] 10 is a graph comparing the spectral characteristics of filter layers using inorganic films used in detection devices. [Figure 5] This is an example of the quantum efficiency of an image sensor. [Figure 6] 10 is a graph comparing the spectral characteristics and quantum efficiency products of filter layers using organic resins used in detection devices. [Figure 7] 1 is a graph showing the spectral characteristics of an external IR cut filter used in a detection device. [Figure 8] 1 is a cross-sectional view of a detection device according to one embodiment of the present invention; [Figure 9] 1 is a cross-sectional view of a detection device according to one embodiment of the present invention; [Figure 10] 1 is a cross-sectional view of a detection device according to one embodiment of the present invention; DETAILED DESCRIPTION OF THE INVENTION

[0010] Hereinafter, each embodiment of the present invention will be described with reference to the drawings. However, the present invention can be embodied in various forms without departing from the spirit of the present invention, and should not be construed as being limited to the description of the embodiments exemplified below. Furthermore, in the drawings, the width, thickness, shape, etc. of each part may be shown schematically compared to the actual form to make the explanation clearer. However, these schematic diagrams are merely examples and do not limit the interpretation of the present invention. Furthermore, in this specification and each drawing, elements that are the same or similar to those described in the previous drawings may be given the same reference numerals, and redundant explanations may be omitted.

[0011] In the present invention, when a single film is processed to form multiple films, these multiple films may have different functions and roles. However, these multiple films originate from films formed as the same layer in the same process, and have the same layer structure and the same material. Therefore, these multiple films are defined as existing in the same layer.

[0012] In this specification, expressions such as "above" and "below" when describing the drawings express the relative positional relationship between a structure of interest and another structure. In this specification, in a side view, the direction from an insulating surface described below toward the light-emitting element is defined as "above," and the opposite direction is defined as "below." In this specification and claims, when describing an aspect in which another structure is disposed on top of another structure, the term "above" is used to refer to both a case in which another structure is disposed directly above the structure so as to be in contact with the structure, and a case in which another structure is disposed above the structure via another structure, unless otherwise specified.

[0013] (First embodiment) A detection device 100 according to one embodiment of the present invention will be described with reference to FIGS.

[0014] Fig. 1 is a cross-sectional view of a detection device 100 according to one embodiment of the present invention. As shown in Fig. 1, the detection device 100 has a sensor substrate 110, a filter layer 120, a display panel 130, an adhesive layer 140, and a cover member 150. That is, the sensor substrate 110, the filter layer 120, the display panel 130, the adhesive layer 140, and the cover member 150 are stacked in this order in a direction perpendicular to the surface of the sensor substrate 110. The detection region of the detection device 100 is indicated as detection region AA.

[0015] The array substrate 10 of the sensor substrate 110 includes a plurality of pixels 30 (shown in FIG. 2) arranged in a two-dimensional array. Each of the plurality of pixels 30 includes a light receiving element. The light receiving element is, for example, a PIN (Positive Intrinsic Negative Diode) type photodiode or a photodiode made of an organic semiconductor.

[0016] A filter layer 120 is provided on the array substrate 10 of the sensor substrate 110. The filter layer 120 is provided so as to overlap the entire two-dimensional array of the array substrate 10. The filter layer 120 has a function of transmitting light in a predetermined wavelength band. The filter layer 120 will be described in detail later.

[0017] The display panel 130 is provided on the filter layer 120. The display panel 130 may be, for example, an organic light-emitting diode (OLED) display panel or an inorganic light-emitting diode (micro LED, mini LED). Alternatively, the display panel may be a liquid crystal display panel (LCD) using liquid crystal elements as display elements, or an electrophoretic display panel (EPD) using electrophoretic elements as display elements.

[0018] The adhesive layer 140 is provided between the display panel 130 and the cover member 150. The adhesive layer 140 may be any layer that bonds the display panel 130 and the cover member 150 together. The detection device 100 may have a structure in which the adhesive layer 140 is not provided in a region of the sensor substrate 110 that corresponds to the detection area AA. When the adhesive layer 140 is not provided in the detection area AA, the detection device 100 has a structure in which the adhesive layer 140 bonds the cover member 150 and the display panel 130 together in a region that corresponds to a peripheral region outside the detection area AA. The adhesive layer 140 provided in the detection area AA also has the function of protecting the display panel 130.

[0019] The cover member 150 is a light-transmitting member and a protective member that protects the display panel 130. For example, a glass substrate or a resin substrate is used for the cover member 150. Note that the cover member 150 does not necessarily have to be provided on the display panel 130. In this case, the finger Fg comes into contact with the display panel 130.

[0020] In the detection device 100, display light (light L1) emitted from the display panel 130 is reflected as light L2 by the finger Fg, which is the detection target. The detection device 100 detects the light L2 reflected by the finger Fg to detect unevenness (e.g., a fingerprint) on the surface of the finger Fg. Furthermore, in addition to detecting fingerprints, the detection device 100 may detect information about a living body by detecting light L2 reflected inside the finger Fg. The information about a living body may include, for example, an image of blood vessels such as veins, a pulse rate, and a pulse wave. The color of the light L1 emitted from the display panel 130 may be varied depending on the detection target. In this way, the fingerprint and information about the living body of the finger Fg can be detected based on the light L1 emitted from the display panel 130 and the light L2 reflected by the finger Fg.

[0021] The filter layer used in fingerprint detection devices can be a color filter that is installed in a conventional liquid crystal panel. However, even if a color filter is used as an IR cut filter in a detection device, it does not provide the same sensor characteristics as an external IR cut filter. Therefore, there is a problem that the detection device cannot detect fingerprints under natural light.

[0022] Furthermore, when using color filters provided on conventional liquid crystal panels as IR cut filters, there have been no clear guidelines regarding the required characteristics.

[0023] Therefore, one object of one embodiment of the present invention is to provide a thin detection device 100. Another object of one embodiment of the present invention is to provide a method for calculating necessary characteristics as quantitative values when a color filter is used as an IR cut filter.

[0024] Next, various layers provided on the sensor substrate 110 will be described in detail. In Fig. 2, the direction from the light receiving element 12 toward the microlens 28 is defined as direction Dz. One direction perpendicular to direction Dz is defined as direction Dz. A direction perpendicular to direction Dz and perpendicular to direction HDx is defined as Dy.

[0025] The sensor substrate 110 includes an array substrate 10, a filter layer 120, and a resin layer 20. The sensor substrate 110 includes a plurality of pixels 30 arranged in a two-dimensional array in directions Dx and Dy.

[0026] 2 shows a cross section of one of the multiple pixels 30 included in the sensor substrate 110. The pixel 30 includes a light receiving element 12, a planarization film 14, a light-shielding layer 16, a filter layer 120, a light-transmitting resin layer 22, a light-shielding layer 24, a light-transmitting resin layer 26, and a microlens 28, which are provided on the substrate 11.

[0027] The array substrate 10 has a substrate 11, light receiving elements 12, a planarization film 14, and a light-shielding layer 16. A plurality of light receiving elements 12 are provided on the substrate 11. The light receiving elements 12 are arranged in a two-dimensional array in the direction Dx and the direction Dy. A planarization film 14 is provided on the light receiving elements 12. The planarization film 14 has the function of flattening the surface on which the filter layer 120 is formed. An organic resin is used as the planarization film 14.

[0028] A light-shielding layer 16 is provided on the planarization film 14. The light-shielding layer 16 may be made of a metal material such as molybdenum (Mo). The light-shielding layer 16 has a thickness of, for example, 0.065 μm. In FIG. 2, an opening OP1 is provided in the light-shielding layer 16 in a region overlapping with the light-receiving element 12.

[0029] A filter layer 120 is provided on the light-shielding layer 16. The filter layer 120 is provided on and in direct contact with the light-shielding layer 16. In other words, the filter layer 120 is provided between the light-shielding layer 16 and the light-transmitting resin layer 22 in the direction Dz. The filter layer 120 also covers the area overlapping with the opening OP1, and is in contact with the planarization film 14 of the array substrate 10 via the opening OP1. The filter layer 120 is a filter that blocks light in a predetermined wavelength band.

[0030] The light-transmitting resin layer 22 is provided directly on and in contact with the filter layer 120. In other words, the light-transmitting resin layer 22 is provided between the light-shielding layer 16 and the light-shielding layer 24 in the direction Dz. The light-transmitting resin layer 22 is formed of, for example, a light-transmitting acrylic resin.

[0031] A light-shielding layer 24 is provided on the light-transmitting resin layer 22. The light-shielding layer 24 is made of a black organic resin or a light-shielding metal material. The film thickness of the light-shielding layer 24 is, for example, 1.5 μm. The light-shielding layer 24 may be made of the same material as the light-shielding layer 16, or may be made of a different material. The light-shielding layer 24 and the light-shielding layer 16 may have the same film thickness, or may have different film thicknesses. In FIG. 2, an opening OP2 is provided in the light-shielding layer 24 in a region overlapping the light-receiving element 12 and the opening OP1 of the light-shielding layer 16.

[0032] The light-transmitting resin layer 26 is provided on and in direct contact with the light-shielding layer 24. The light-transmitting resin layer 26 also covers the region overlapping with the opening OP2. The light-transmitting resin layer 26 is formed of, for example, an acrylic resin.

[0033] Microlenses 28 are provided on the light-transmitting resin layer 26. The microlenses 28 are provided at positions overlapping the light receiving elements 12 in the direction Dz. The microlenses 28 are arranged in a two-dimensional array in the directions Dx and Dy. The microlenses 28 collect light incident on the sensor substrate 110 and direct the light to be incident on the light receiving elements 12.

[0034] The thickness t2 of the light-transmissive resin layer 26 is formed to be approximately the same as or thicker than the thickness t1 of the light-transmissive resin layer 22. The thickness t1 of the light-transmissive resin layer 22 and the thickness t2 of the light-transmissive resin layer 26 are formed to be thicker than the thickness t4 of the filter layer 120. Also, the thickness t1 of the light-transmissive resin layer 22 and the thickness t2 of the light-transmissive resin layer 26 are thicker than the thickness t3 of the planarization film 14 of the sensor substrate 110. The thicknesses t1 and t2 are from 3 μm to 30 μm. The thickness t1 is, for example, about 18 μm. The thickness t2 is, for example, about 16.5 μm. The thickness t3 is from 1 μm to 10 μm and, for example, is 4.5 μm or more. Also, the thickness t4 of the filter layer 120 is from 1 μm to 5 μm and, for example, is 1.35 μm.

[0035] Here, the relationship among the width W1 of the opening OP1 of the light-shielding layer 16, the width W2 of the opening OP2 of the light-shielding layer 24, and the width W3 of the microlens 28 will be described. The width W1, the width W2, and the width W3 satisfy the relationship W1 < W2 < W3.

[0036] The light incident on the sensor substrate 110 is condensed by the microlens 28 and passes through the light-transmissive resin layer 26. The light that has passed through the light-transmissive resin layer 26 passes through the opening OP2 provided in the light-shielding layer 24 and then passes through the light-transmissive resin layer 26 again. The light that has passed through the light-transmissive resin layer 26 is incident on the filter layer 120. The filter layer 120 has a function of transmitting light in a predetermined wavelength band.

[0037] In one embodiment of the present invention, the filter layer 120 satisfies the following conditions in terms of spectral characteristics. Condition I: The peak transmittance is 90% or more. Condition II: The transmittance at a wavelength of 550 nm is 80% or more. Condition III: The transmittance at a wavelength of 600 nm is 10% or more. Condition IV: The transmittance at wavelengths of 680 nm to 700 nm is 10% or less.

[0038] The filter layer 120 is formed of, for example, a green-colored resin material, and functions as an IR cut filter that blocks infrared rays. Phthalocyanine pigment or acrylic resin, for example, can be used as the material for the filter layer 120. That is, the predetermined wavelength band of the filter layer 120 is 500 nm to 570 nm. The filter layer 120 allows components of the wavelength band required for fingerprint detection to be incident on the light receiving element 12.

[0039] When an inorganic film is used as the filter layer 120, the filter layer 120 is formed by a vapor deposition method. When an inorganic film is vapor deposited on a large substrate, it is difficult to form the inorganic film with a uniform thickness within the substrate surface. Furthermore, when an inorganic film is formed on a terminal portion or the like, it is difficult to subsequently remove the inorganic film formed on the terminal portion. Furthermore, when an inorganic film is formed by a vapor deposition method, throughput and costs increase.

[0040] By forming the filter layer 120 from a green-colored resin material, it is possible to manufacture the filter layer 120 using the same manufacturing process as that used for the color filter layers of conventional liquid crystal panels. Therefore, the detection device 100 according to one embodiment of the present invention is suitable for mass production.

[0041] The detection device 100 according to one embodiment of the present invention can improve the accuracy of fingerprint detection under natural light. The results of verifying the accuracy of fingerprint detection using the detection device 100 according to one embodiment of the present invention will be described below.

[0042] First, six types of filter layers with different spectral characteristics were prepared. All of the filter layers 120A to 120D were made of a resin material colored green. The filter layers 120E and 120F were made of an inorganic material. The filter layers 120E and 120F were made of, for example, a silicon oxide film and a silicon nitride film. The filter layers 120E and 120F were made of different materials.

[0043] Fig. 3 shows a comparison of the spectral characteristics of filter layers 120A to 120D used in a detection device. In Fig. 3, the thin dotted line indicates the spectral characteristics of filter layer 120A, and the thick dotted line indicates the spectral characteristics of filter layer 120B. Furthermore, the thin solid line indicates the spectral characteristics of filter layer 120C, and the thick solid line indicates the spectral characteristics of filter layer 120D.

[0044] FIG. 4 shows the results of comparing the spectral characteristics of the filter layers 120E and 120F used in the detection device.

[0045] The spectral characteristics of the filter layers 120A to 120F shown in FIGS. 3 and 4 were evaluated to see if each of the filter layers 120A to 120F satisfied the following conditions. Condition I: The peak transmittance is 90% or more. Condition II: The transmittance at a wavelength of 550 nm is 80% or more. Condition III: The transmittance at a wavelength of 600 nm is 10% or more. Condition IV: The transmittance at wavelengths of 680 nm to 700 nm is 10% or less.

[0046] Table 1 shows the condition conformance of the filter layers 120A to 120F.

[0047] [Table 1]

[0048] In Table 1, a circle indicates that the condition is met, an X indicates that the condition is not met, and a triangle indicates that the condition is not met to a certain extent.

[0049] 3, 4, and Table 1, it was found that the filter layers 120C to 120E satisfy all of the conditions I to IV. It was found that the filter layer 120B does not quite satisfy the conditions II and III.

[0050] Next, detector 200A having filter layer 120A formed on an array substrate on which a light receiving element is provided, detector 200B having filter layer 120B formed on the array substrate, detector 200C having filter layer 120C formed on the array substrate, detector 200D having filter layer 120D formed on the array substrate, detector 200E having filter layer 120E formed on the array substrate, and detector 200F having filter layer 120F formed on the array substrate were prepared. Note that the configuration of detector 200A to 200F corresponds to the configuration of detector 100 shown in FIG. 1, in which filter layer 120 is replaced with filter layers 120A to 120F.

[0051] Next, these detection devices were evaluated to see whether they could actually detect fingerprints under simulated sunlight of 100,000 lux.

[0052] Table 1 shows the results of evaluation of whether or not the detecting devices 200A to 200F were able to detect fingerprints.

[0053] [Table 2]

[0054] In Table 2, a circle indicates that a fingerprint was detected under simulated sunlight, and an x indicates that a fingerprint was not detected under simulated sunlight.

[0055] As shown in Tables 1 and 2, it was found that the detectors 200C to 200E using the filter layers 120C to 120E that satisfy all of Conditions I to IV can detect fingerprints even under simulated sunlight. In contrast, it was found that the detectors using the filter layers 120A, 120B, and 120F that do not satisfy any one of Conditions I to IV cannot detect fingerprints under simulated sunlight.

[0056] From the above results, it was found that a detection device using a green organic resin (a so-called color filter) can detect fingerprints even under simulated sunlight.

[0057] Next, a method for calculating the necessary characteristics as quantitative values when using a color filter as an IR cut filter will be described.

[0058] The signal-to-noise ratio (S / N ratio) of the image sensor provided with the filter layer 120 can be calculated based on the transmittance of the filter layer 120 and the quantum efficiency of the image sensor provided with the filter layer 120. The S / N ratio of the image sensor provided with the filter layer 120 is expressed by the following formula (1). The S / N ratio refers to the ratio of effective signal components to noise components.

[0059]

number

[0060] Here, A(x) represents the transmittance (spectral transmittance) of the filter layer, QE(x) represents the quantum efficiency of the image sensor, and N represents the stationary noise component during measurement.

[0061] The S / N ratio calculated by the above formula (1) and the S / N ratio calculated in the same manner when an external IR filter is used preferably satisfy the following formula (2): In this case, the external IR cut filter is made of a material that allows fingerprint detection under natural light when used in a detection device.

[0062]

number

[0063] Here, IR(x) represents the spectral transmittance of the external IR filter.

[0064] In the above formula (2), the S / N ratio is calculated from the spectral transmittance IR(x) of the target external IR cut filter, the quantum efficiency QE(x) of the image sensor, and the steady noise component N at the time of measurement. The S / N ratio is also calculated from the spectral transmittance A(x) of the filter layer 120 used as the IR cut filter, the quantum efficiency QE(x) of the image sensor, and the steady noise component N at the time of measurement. If the relationship in formula (2) is satisfied, it can be evaluated that the filter layer 120 has the characteristics required when used in a detection device.

[0065] The results of evaluating the S / N ratio for the filter layer 120B and the filter layer 120C will be described below.

[0066] Figure 5 shows an example of the quantum efficiency QE of an image sensor. In Figure 5, the horizontal axis represents wavelength [nm] and the vertical axis represents conversion efficiency.

[0067] Fig. 6 shows the product of the spectral transmittance A(x) and quantum efficiency (QE) of the above-mentioned filter layer 120B and the product of the spectral transmittance A(x) and quantum efficiency (QE) of the filter layer 120C. Comparing the filter layer 120B and the filter layer 120C, Fig. 6 shows that the filter layer 120B transmits light in a wider wavelength band.

[0068] Figure 7 shows the spectral characteristics of the target external IR cut filter. In Figure 7, the horizontal axis represents wavelength [nm], and the vertical axis represents the spectral transmittance IR(x) of the external IR cut filter.

[0069] In equation (2), when the noise component is set to 0.0297, the S / N ratio of the IR cut filter is calculated to be 7.60 from the quantum efficiency QE shown in FIG. 5 and the spectral transmittance IR(x) of the external IR cut filter shown in FIG. 7.

[0070] In equation (2), when the noise component is set to 0.0297, the S / N ratio of the filter layer 120B is calculated to be 6.43 from the quantum efficiency QE shown in FIG. 5 and the spectral transmittance A(x) of the filter layer 120B shown in FIG.

[0071] In equation (2), when the noise component is set to 0.0297, the S / N ratio of the filter layer 120C is calculated to be 8.13 from the quantum efficiency QE shown in FIG. 5 and the spectral transmittance A(x) of the filter layer 120C shown in FIG.

[0072] Comparing the S / N ratio of the external IR cut filter with that of the filter layer 120B, it is found that the S / N ratio of the filter layer 120B is smaller. As shown in Table 2, the detector 200B using the filter layer 120B was unable to detect a fingerprint. Comparing the S / N ratio of the external IR cut filter with that of the filter layer 120C, it is found that the S / N ratio of the filter layer 120C is larger. As shown in Table 2, the detector 200C using the filter layer 120C was able to detect a fingerprint. Thus, the comparison of the S / N ratio of the external IR cut filter with that of the filter layers 120B and 120C proved to be consistent with the fingerprint detection accuracy of the detector.

[0073] As explained above, it has been proven that by using equation (2) in evaluating the external IR cut filter and the filter layer 120, it is possible to evaluate the characteristics required for the filter layer 120 used in a fingerprint detection device.

[0074] (Variation 1) Although the detection device 100 according to one embodiment of the present invention has been described with a configuration including the display panel 130 on the sensor substrate 110, the configuration is not limited thereto. For example, an illumination device may be provided on the sensor substrate 110 instead of the display panel 130. FIG. 8 shows a detection device 100A having a configuration partially different from that of the detection device 100 shown in FIG. 1. The illumination device 160 shown in FIG. 8 may use, for example, a cover member 150 as a light guide plate provided at a position corresponding to the detection area AA of the detection device 100A. Alternatively, the illumination device 160 may be a so-called side-light type front light having multiple light sources 62 arranged at one or both ends of the cover member 150. In other words, the cover member 150 has a light irradiation surface that emits light and is a component of the illumination device 160. The illumination device 160 irradiates light L1 from the light irradiation surface of the cover member 150 toward the finger Fg, which is the detection target. For example, a light-emitting diode (LED) that emits light of a predetermined color is used as the light source 62.

[0075] (Variation 2) Although the detection device 100A according to one embodiment of the present invention has been described as being configured to use the illumination device 160 of a sidelight and frontlight type, the present invention is not limited to this configuration. The light source 62 of the illumination device 160 may be provided to the side or above the cover member 150. FIG. 9 shows a detection device 100B having a configuration that is partially different from that of the detection device 100A shown in FIG. 8. In the illumination device 160A shown in FIG. 9, the light source 62 is provided above the cover member 150. Light L1 may be irradiated onto the finger Fg from the side or above the finger Fg.

[0076] (Variation 3) Although the detection device 100B according to one embodiment of the present invention has been described with reference to a configuration in which the light source 62 of the illumination device 160 is provided above the cover member 150, the configuration is not limited to this. The illumination device 160 may be a direct backlight having the light source 62 provided in the detection area AA of the detection device 100. FIG. 10 shows a detection device 100C having a configuration that is partially different from that of the detection device 100B shown in FIG. 9. Light L1 emitted from the illumination device 160 is reflected as light L2 by a finger Fg, which is the detection target. The detection device 100C detects the light L2 reflected by the finger Fg.

[0077] As described above, the detector 100, 100A to 100C according to one embodiment of the present invention can be applied to various forms. Therefore, even if a person skilled in the art appropriately adds or removes components or modifies the design of the detector 100, 100A to 100C described as an embodiment of the invention, or adds or omits processes or modifies conditions, the scope of the present invention is included as long as the gist of the present invention is maintained. Furthermore, the above-described embodiments can be combined with each other to the extent that no technical contradictions arise.

[0078] Furthermore, even if there are other effects and advantages different from those brought about by the above-described embodiments, if these are clear from the description in this specification or can be easily predicted by a person skilled in the art, they are naturally understood to be brought about by the present invention.

[0079] It is understood that within the scope of the present invention, those skilled in the art may make various modifications and alterations, and that these modifications and alterations also fall within the scope of the present invention. For example, to the above-described embodiments, those skilled in the art may appropriately add, delete, or modify components, or add, omit, or change conditions of steps, and these modifications are also included within the scope of the present invention as long as they maintain the gist of the present invention. [Explanation of symbols]

[0080] 10: array substrate, 11: substrate, 12: light receiving element, 14: planarization film, 16: light-shielding layer, 20: resin layer, 22: light-transmitting resin layer, 24: light-shielding layer, 26: light-transmitting resin layer, 28: microlens, 30: pixel, 62: light source, 100, 100A to 100C: detection device, 110: sensor substrate, 120, 120A to 120F: filter layer, 130: display panel, 140: adhesive layer, 150: cover member, 160: lighting device, 200A to 200F: detection device

Claims

1. A light receiving element; a filter layer superimposed on the light receiving element and including a first color material having a peak transmittance for light in a first wavelength band; a display panel provided on the filter layer, The filter layer is The peak transmittance is 90% or more, The transmittance at a wavelength of 550 nm is 80% or more, The transmittance at a wavelength of 600 nm is 10% or more, The transmittance at wavelengths of 680 nm to 700 nm is 10% or less, a microlens on the light receiving surface side of the light receiving element; a first light-shielding layer provided between the light-receiving element and the filter layer in direct contact with the filter layer, the first light-shielding layer having a first opening overlapping the light-receiving element; a second light-shielding layer provided between the filter layer and the microlens, the second light-shielding layer having a second opening overlapping the light-receiving element and the first opening; the first light-shielding layer and the second light-shielding layer are formed of a metal material; The detection device, wherein the filter layer is provided between the light receiving element and the microlens.

2. 2. The detection instrument of claim 1, wherein the first wavelength band is from 500 nm to 570 nm.

3. The detection device according to claim 1 , wherein the first light-shielding layer has a thickness smaller than that of the second light-shielding layer.

4. The thickness of the first light-shielding layer is 0.065 μm, 2. The detection instrument of claim 1, wherein the second light-shielding layer has a thickness of 1.5 μm.

5. 2. The detection device of claim 1, wherein W1 is smaller than W2 and W3, and W2 is smaller than W3, where W1 is the width of the first opening, W2 is the width of the second opening, and W3 is the width of the microlens.

6. a first light-transmitting resin layer provided between the filter layer and the second light-shielding layer; The detection device according to claim 1 , further comprising a second light-transmitting resin layer provided between the second light-shielding layer and the microlens.

7. 7. The detection device according to claim 6, wherein when the thickness of the first light-transmitting resin layer is t1 and the thickness of the second light-transmitting resin layer is t2, t2 is equal to or greater than t1.

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