Manufacturing equipment and its operating method

Abstract

The purpose of the present invention is to provide a technology that can improve the efficiency of work performed on a device. One of representative manufacturing devices of the present invention comprises a plurality of element devices, and a control unit that transmits data signals to the plurality of element devices, wherein the plurality of element devices are classified into groups for each function and include one or more groups that include: a first slave device group that includes at least one element device among the plurality of element devices; and a second slave device group that includes at least one element device among element devices except for the element devices included in the first slave device group from the plurality of element devices, wherein the control unit transmits the data signals to the first slave device group and the second slave device group.

Description

[Technical Field]

[0001] The present invention relates to a manufacturing apparatus and a method for operating the same. [Background technology]

[0002] Control systems that support social infrastructure consist of sensors, controllers, and actuators. In a control system, the state of a physical object is acquired by a sensor and input to the controller, which then calculates control command values to instruct the actuator, and the actuator acts on the physical object based on the control command values. For example, the desired control can be performed by periodically repeating this series of processes.

[0003] Such control systems are also used in semiconductor manufacturing equipment and semiconductor inspection equipment that manufacture semiconductor devices by processing semiconductor wafers, etc. For example, the use of such control systems has been considered in plasma processing equipment that uses plasma to perform an etching process on a film layer to be processed, among multiple film layers pre-formed on a semiconductor wafer placed in a processing chamber inside a vacuum vessel, to form a circuit structure for a semiconductor device.

[0004] Furthermore, because many semiconductor manufacturing equipment units are installed in a building, the control systems that control the operation of these multiple semiconductor manufacturing equipment units connect multiple sensors, controllers, and actuators to form a network. Technology for such networks is evolving to meet the requirements of control systems, including time constraints (e.g., maximum allowable delay time), cost, reliability, and field-specific requirements. Therefore, semiconductor manufacturing equipment networks are also required to accommodate the increasing scale and sophistication of control systems, faster communication speeds in network technology, shorter control communication cycles, and larger communication capacities.

[0005] One method to address these needs is to utilize multiple communication ports to send communication packets in parallel. In other words, by distributing the target communication devices and communicating in parallel, communication delays are reduced, resulting in faster communication, shorter control communication cycles, and larger communication capacity.

[0006] One known technique for controlling such communications is described in Japanese Patent Laid-Open No. 2021-015855 (Patent Document 1). The performance calculation method disclosed in Patent Document 1 acquires shipping inspection data for multiple flow rate controllers, calculates a first performance value representing the performance of each flow rate controller as a deviation value based on the acquired shipping inspection data and a first coefficient for each item indicating the performance of the flow rate controller, and calculates a second performance value representing the performance of the processing device using the flow rate controller as a deviation value based on the calculated first performance value and a second coefficient for each item indicating the performance of the processing device using the flow rate controller. The technology disclosed in Patent Document 1 uses EtherCAT (registered trademark), an industrial Ethernet (registered trademark) technology, as a configuration for communicating with multiple devices connected to the plasma processing device, and communicates send and receive process data for all nodes within a network segment using a single frame. [Prior art documents] [Patent documents]

[0007] [Patent Document 1] Patent Publication No. 2021-015855 Summary of the Invention [Problem to be solved by the invention]

[0008] However, the EtherCAT used in Patent Document 1 basically requires that the electronic information (ENI file) describing the connection order of the components (devices) connected to it matches the connection and order of each component. For this reason, it is known that by utilizing the hot connect function and connecting a group of multiple components (slaves) to a master, communication can be established even if the electronic information does not match the components, making it possible to connect / disconnect some components.

[0009] However, with conventional technology, if a component connected as a device belonging to a given slave is removed for maintenance or to change to a new specification, if the master is considered to be the most upstream component, this component will no longer be able to communicate with other slave devices downstream. For example, it has been difficult to perform maintenance or replacement of a specific component among multiple components connected to the plasma processing apparatus while operating the plasma processing apparatus and performing maintenance or replacement of other components, which reduces the efficiency of work performed on the plasma processing apparatus.

[0010] The difficulty of performing maintenance, replacement, and other tasks in parallel can be solved by connecting multiple hubs, each with a port for connecting slave components, to a master, and connecting one slave component to each port. However, this master system requires an increased number of hubs depending on the number of slave components connected to the plasma processing apparatus, which can lead to problems such as an increased installation area and complicated wiring. These problems were not sufficiently considered in the prior art.

[0011] An object of the present invention is to provide a technique that can improve the efficiency of work performed on a device. [Means for solving the problem]

[0012] In order to solve the above-mentioned problems, one representative manufacturing apparatus of the present invention is a manufacturing apparatus including a plurality of element devices and a control unit that transmits data signals to the plurality of element devices, the plurality of element devices being grouped according to their respective functions, and including a first slave device group including at least one element device of the plurality of element devices, and a second slave device group including at least one element device of the plurality of element devices excluding the element devices included in the first slave device group, The system has a plurality of groups including a third slave device group including at least one element device from among the plurality of element devices excluding the element devices included in the first slave device group and the element devices included in the second slave device group, the third slave device group and the first slave device group being configured so that operations of the element devices are not performed in parallel, and the third slave device group is connected to the first slave device group in a daisy chain manner, The control unit transmits the data signal to the first slave device group and The aforementioned Send to the second slave device group. [Effects of the Invention]

[0013] According to the present invention, it is possible to provide a technique that can improve the efficiency of work performed on a device. Problems, configurations, and effects other than those described above will become apparent from the following description of the preferred embodiments. [Brief explanation of the drawings]

[0014] [Figure 1] FIG. 1 is a diagram schematically illustrating the configuration of a plasma processing apparatus according to a first embodiment. [Figure 2] FIG. 2 is a block diagram illustrating an example of a control unit according to the first embodiment and components connected thereto. [Figure 3] FIG. 3 is a block diagram illustrating an example of a control unit of the plasma processing apparatus according to the first embodiment and a slave device group connected thereto. [Figure 4] FIG. 4 is a flowchart showing a flow of maintenance work for a plurality of components in the control unit and slave device group shown in FIG. [Figure 5]FIG. 5 is a block diagram schematically illustrating an example of a control unit of a plasma processing apparatus and components connected thereto as a comparative example to FIG. [Figure 6] FIG. 6 is a block diagram schematically illustrating an example of a control unit of a plasma processing apparatus according to a second embodiment and a slave device group connected thereto. DETAILED DESCRIPTION OF THE INVENTION

[0015] Hereinafter, an embodiment of the present invention will be described with reference to the drawings. Note that the present invention is not limited to the embodiment. In addition, in the description of the drawings, the same parts are designated by the same reference numerals. When there are multiple components with the same or similar functions, they may be described using the same reference numeral with different subscripts. When there is no need to distinguish between these multiple components, the subscripts may be omitted.

[0016] This disclosure will be explained on the premise that in a communication method using EtherCAT, after confirming the network configuration, the master device assigns a fixed address to each component included in the network and uses this fixed address for communication with the component, which allows the master device to treat the specified component as a slave device and send command signals to it. Furthermore, a master device with EtherCAT functionality is assumed to have a hot connect function, so even if a component is removed while the network is in operation, such as when power is supplied to the component and communication is in progress, the master device can still specify other components that make up the network. A daisy chain refers to a situation in which devices are connected in series only through a main connection system, with no branching connections to other devices. Here, the main connection system refers to a connection that transmits information such as control signals from a control unit.

[0017] [Example 1] The first embodiment will be described below with reference to FIGS.

[0018] (Configuration of plasma processing apparatus) 1 is a diagram showing a schematic configuration of a plasma processing apparatus 100 according to a first embodiment. The plasma processing apparatus (manufacturing apparatus) 100 includes a plurality of element devices and a control unit that transmits data signals to the plurality of element devices. The plasma processing apparatus 100 uses a microwave electric field as an electric field for forming plasma, generates ECR (Electron Cyclotron Resonance) between the microwave electric field and magnetic field to form plasma, and uses the plasma to etch a substrate-like sample such as a semiconductor wafer.

[0019] The plasma processing apparatus 100 has a vacuum vessel 101 equipped with a processing chamber 104 inside where plasma is generated. A disk-shaped dielectric window 103 (made of quartz, for example) is placed on the processing chamber 104, which has a cylindrical upper portion, as a cover member, and constitutes part of the vacuum vessel 101. A sealing member such as an O-ring is disposed between the cylindrical vacuum vessel 101 and the dielectric window 103, ensuring airtightness inside the vacuum vessel 101 or processing chamber 104.

[0020] Furthermore, a vacuum exhaust port 110 connected to the processing chamber 104 is disposed at the bottom of the vacuum vessel 101, and is in communication with a vacuum pump 185 disposed below and connected to the vacuum vessel 101. Furthermore, a shower plate 102 forming a circular ceiling surface of the processing chamber 104 is provided below the dielectric window 103. The shower plate 102 has a disk shape with multiple gas inlet holes 102a disposed through the center, and etching process gas is introduced into the processing chamber 104 through the gas inlet holes 102a. The shower plate 102 is made of a dielectric material such as quartz.

[0021] An electric field / magnetic field generating unit 160 is disposed above the vacuum vessel 101, and generates an electric field and a magnetic field for generating the plasma 116. The electric field / magnetic field generating unit 160 includes a waveguide 105 and an electric field generating power supply 106. A high-frequency electric field generated by the electric field generating power supply 106 is transmitted through the inside of the waveguide 105 and introduced into the processing chamber 104. The electric field generating power supply 106 in this embodiment is a microwave power supply that generates an electric field having a frequency of, for example, 2.45 GHz. As will be described later, the electric field generating power supply 106 includes a microwave power supply 235 and a microwave power matching box 236.

[0022] Magnetic field generating coils 107 are arranged around the lower end of waveguide 105 and around vacuum vessel 101. Magnetic field generating coils 107 are composed of an electromagnet and a yoke that are supplied with a direct current to form a magnetic field.

[0023] With processing gas introduced into the processing chamber 104 through the gas inlet holes 102a of the shower plate 102, the microwave electric field generated by the electric field generating power supply 106 propagates through the inside of the waveguide 105, passes through the dielectric window 103 and the shower plate 102, and is supplied from above to below into the processing chamber 104. Furthermore, a magnetic field generated by a direct current supplied to the magnetic field generating coil 107 is supplied into the processing chamber 104, where it interacts with the microwave electric field, generating ECR (Electron Cyclotron Resonance). The ECR excites, dissociates, or ionizes atoms or molecules of the processing gas, generating high-density plasma 116 in the processing chamber 104.

[0024] A wafer-mounting electrode 120 is disposed below the space where plasma 116 is generated. The wafer-mounting electrode 120 has a cylindrical protrusion (convex) at the center of its upper part, the upper surface of which is higher than the outer periphery, and a mounting surface 120a on the upper surface of the convex part on which a semiconductor wafer (hereinafter simply referred to as a wafer) 109, which is a sample (object to be processed), is mounted. The mounting surface 120a is disposed so as to face the shower plate 102 or the dielectric window 103.

[0025] The wafer-holding electrode 120 includes an electrode substrate 108 , a dielectric film 140 provided on the electrode substrate 108 , and a susceptor ring 113 .

[0026] The electrode substrate 108 has a convex portion (protrusion) in the upper central portion and a concave portion (depression) surrounding the periphery thereof. The convex portion, which is circular in plan view, is located in the center of the electrode substrate 108, and a ring-shaped concave portion is located around it. The convex portion has a circular upper surface in plan view, and the upper surface of the convex portion is covered with a dielectric film 140. The upper surface of the dielectric film 140 forms a mounting surface on which the semiconductor wafer 109 is placed, and the mounting surface has a circular shape in plan view, with its radius equal to the radius of the upper surface, and the centers of the two circles overlap each other.

[0027] A conductive film 111, which is a film made of a plurality of conductive materials, is disposed inside the dielectric film 140. The conductive film 111 is connected to a DC power supply 126 via a high-frequency filter 125. When DC power is supplied to the conductive film 111, the semiconductor wafer 109 is attracted to the mounting surface via the dielectric film 140 on the conductive film 111. The conductive film 111 is an electrostatic attraction electrode. For convenience, the convex portions (protrusions) of the electrode base material 108 and the dielectric film 140 including the conductive film 111 are collectively referred to as the sample stage ST.

[0028] The electrode substrate 108 is connected to a high frequency power source (RF power source) 232 via a high frequency power source matching box (RF matching box) 233. to The high frequency power supply 232 and the high frequency power supply matching box 233 are arranged at a location closer than the distance between the high frequency filter 125 and the conductive film 111. Furthermore, the high frequency power supply 232 is connected to the ground 112. The high frequency power supply matching box 233 and the high frequency power supply 232 may be a single set, or may be a set of high frequency power supplies of a plurality of matching boxes. That is, a plurality of high frequency power supplies (RF power supplies) 2321 to 232 m 2331 to 2333 m The electrode substrate 108 is connected to the plurality of high frequency power sources 2321 to 232 mIf a mixer is used, a radio frequency (RF) mixer 234 may be provided as described below.

[0029] During processing of the semiconductor wafer 109, at least one high frequency power supply 232 or multiple high frequency power supplies 2321 to 232 m High frequency powers of predetermined frequencies are supplied to the electrode substrate 108 (i.e., the sample stage ST) from the respective electrodes 116. A bias potential having a distribution according to the difference between the potential of the plasma 116 and the potential of the electrode substrate 108 is formed above the semiconductor wafer 109 attracted and held on the mounting surface via the dielectric film 140.

[0030] The electrode substrate 108 is provided with multiple coolant flow paths arranged spirally or concentrically around the central axis of the electrode substrate 108 in the vertical direction to cool the wafer mounting electrode 120. The inlets and outlets of the coolant flow paths to the wafer mounting electrode 120 are connected by pipes to a temperature regulator (not shown) that has a refrigeration cycle and regulates the coolant to a predetermined temperature range by heat transfer. The coolant that flows through the coolant flow path and has its temperature changed by heat exchange flows out from the outlet and passes through the pipes and the flow path inside the temperature regulator until it is adjusted to a predetermined temperature range, after which it is supplied to the coolant flow paths within the electrode substrate 108 and circulates.

[0031] A ring-shaped susceptor ring 113 is placed in the recess of the electrode substrate 108, surrounding the protrusion. The susceptor ring 113 is made of at least one member made of a dielectric material, for example, quartz or a ceramic such as alumina. At least the side surface of the electrode substrate 108 and the bottom surface of the recess are covered with the susceptor ring 113, which prevents the electrode substrate 108 from being damaged by plasma.

[0032] 1, the electric field generating power supply 106, the magnetic field generating coil 107, the high frequency power supply 232, the high frequency filter 125, the DC power supply 126, the high frequency power supply matching box 233, etc. are connected to the control unit 170 by wire or wirelessly so as to be able to communicate with each other, as shown by the dashed lines. The detailed configuration of the control unit 170 will be described later.

[0033] In this embodiment, the processing gas is supplied through a pipe extending from a gas supply source for each gas type located below the floor of a building in which the plasma processing apparatus 100 is installed and connected to the vacuum vessel 101. The pipe has a plurality of pipes inside which are separated into a plurality of gas types, and mass flow controllers (MFCs) 2311 to 2312 arranged on these pipes to adjust the flow rate or speed of each type of gas. n In the integrated gas box 181, pipelines for supplying each process gas are joined together to form a plurality of gas supply pipes 1016, which extend to the outside of the integrated gas box 181.

[0034] The gas is introduced into the gap between the dielectric window 103 and the shower plate 102 and diffuses into the processing chamber 104. fart The flow of gas supplied through the gas inlet holes 102a is adjusted by opening or closing an on-off valve 1017 disposed on the gas supply pipes 1016. In this embodiment, the processing gas used is a mixed gas of a reactive gas that is reactive with the film to be processed on the upper surface of the semiconductor wafer 109 or that is made reactive in the plasma 116, and an inert gas that dilutes the reactive gas.

[0035] A vacuum pump 185 such as a turbo molecular pump is disposed and connected below the processing chamber 104 to exhaust gases inside the processing chamber 104 and reduce the pressure. The vacuum pump 185 is connected to a vacuum vessel 101 that forms the bottom of the processing chamber 104 via an exhaust amount control valve 186 that adjusts the exhaust flow rate or speed by increasing or decreasing the area of the flow path.

[0036] (Plasma treatment method) Next, a plasma processing method using the above-described plasma processing apparatus 100 will be described.

[0037] First, the above-described plasma processing apparatus 100 is prepared.

[0038] Next is the process of loading the semiconductor wafer 109. A vacuum transfer chamber, which is depressurized to the same pressure as the processing chamber 104, is connected to the sidewall of the vacuum vessel 101. The semiconductor wafer 109 is placed on the tip of the arm of a wafer transfer robot arranged in the vacuum transfer chamber, and is loaded into the processing chamber 104. Next, the semiconductor wafer 109 is placed on the mounting surface and held by electrostatic adsorption on the sample stage ST.

[0039] Next is the etching gas introduction process. After the transfer robot leaves the vacuum transfer chamber, the inside of the processing chamber 104 is sealed. In this state, etching gas is supplied into the processing chamber 104. The introduced gas is introduced into the processing chamber 104 through the gas introduction holes 102a of the shower plate 102.

[0040] Gases and particles inside the processing chamber 104 are exhausted through the vacuum exhaust port 110 by the operation of a vacuum pump 185 connected to the vacuum exhaust port 110. The pressure inside the processing chamber 104 is adjusted to a predetermined pressure suitable for processing the semiconductor wafer 109 depending on the balance between the amount of gas supplied from the gas introduction holes 102a of the shower plate 102 and the amount of gas exhausted from the vacuum exhaust port 110.

[0041] Next is the plasma etching (plasma processing) process. Although details are omitted, after adjusting the temperature of the semiconductor wafer 109 as necessary, a microwave electric field and magnetic field are supplied into the processing chamber 104, and plasma 116 is generated using gas. Once the plasma 116 is formed, radio frequency (RF) power is supplied from the radio frequency power supply 124 to the electrode substrate 108, forming a bias potential above the upper surface (main surface) of the semiconductor wafer 109, and charged particles such as ions in the plasma 116 are attracted to the upper surface of the semiconductor wafer 109 in accordance with the potential difference between the bias potential and the potential of the plasma 116.

[0042] Furthermore, the etching process is performed by the charged particles colliding with the surface of a film layer to be processed that has been previously placed on the upper surface of the semiconductor wafer 109. During the etching process, the processing gas introduced into the processing chamber 104 and particles of reaction products generated during the process are exhausted from the vacuum exhaust port 110.

[0043] Next is the process of unloading the semiconductor wafer 109. After the etching process, the semiconductor wafer 109 is unloaded from the processing chamber 104 while being supported by the tip of the arm of the aforementioned transfer robot.

[0044] (Configuration of control unit) Next, the details of the configuration and functions of the control unit 170 shown in Fig. 1 will be described. Fig. 2 is a block diagram that schematically shows an example of the control unit 170 according to the first embodiment and each element device (component) connected thereto. The multiple element devices are grouped according to their respective functions, and are divided into a first slave device group including at least one element device among the multiple element devices, and a second slave device group including at least one element device among the multiple element devices excluding the element devices included in the first slave device group. outfit The control unit 170 has one or more groups including a first slave device group and a second slave device group including a first component, and the control unit 170 transmits data signals to the first slave device group and the second slave device group. The control unit 170 also has a master device that generates the data signal, and a hub 220 connected to the master device and having at least a first communication unit and a second communication unit. The first slave device group is connected to the first communication unit of the hub 220, and the second slave device group is connected to the second communication unit of the hub 220. In this embodiment, the control unit 170 includes the master device 210 and the hub 220. The hub 220 is directly connected to the master device 210 so as to be able to communicate with it, and has multiple (three in this embodiment) communication units (ports) 213a to 213c connected to each of the slave device groups 230a to 230c. By providing the hub 220, the master device 210 is connected so as to be able to communicate with the slave device groups 230a to 230c, each of which has at least one component.

[0045] In the control unit 170, the master device 210 generates a data signal to be transmitted to multiple components. The master device 210 transmits and receives data to and from each component of the slave device groups 230a to 230c connected to each port of the hub 220 through each port of the hub 220. Furthermore, the components belonging to each slave device group 230a to 230c connected to each port of the hub 220 are controlled based on command signals or data signals from the master device 210. In this embodiment, the hub 220 directly connected to the master device 210 has at least one port, and multiple components are connected to each master port in a daisy chain. The slave device groups 230a to 230c are connected in a daisy chain via the hub 220. Furthermore, the control unit 170 and the slave device groups 230a to 230c comply with a communication method to which EtherCAT is applied.

[0046] The master device 210 includes, for example, a CPU 211 and a data storage unit 219 configured with a memory and a RAM. The master device 210 may also include a datagram generation unit 217 that generates control data and command signals for the components belonging to each of the slave device groups 230a to 230c.

[0047] Each component included in the plurality of slave device groups 230a to 230c is connected in a daisy chain manner to be able to communicate with the master device 210 via a port of the hub 220. In this embodiment, the components in the slave device group 230a are mass flow controllers (MFC) 2311, mass flow controllers (MFC) 2312, mass flow controllers (MFC) 2313, ..., mass flow controllers (MFC) 2314, ... n (n is a positive integer). Furthermore, the slave device group 230b includes a plurality of high frequency power sources 2321 to 2322. m (m is a positive integer) and high frequency power matching boxes 2331 to 232 for each high frequency power supply. mand a high frequency mixer 234, and the slave device group 230c includes a microwave power supply 235 and a microwave power supply matching box 236 which is a matching box for the microwave power supply.

[0048] Note that the components included in the slave device groups 230a to 230c are not limited to these, and other components may also be included in the slave device groups 230a to 230c.

[0049] In this embodiment, the master device 210 communicates command signals or data with a plurality of slave device groups 230a to 230c and the components belonging to these groups at predetermined intervals via a transmission path 240. In this embodiment, three slave devices are communicably connected to the master device 210. group Although 230a to 230c are shown, the number of slave device groups 230 is not limited to three and may be one, two, or more than three. Although transmission path 240 is shown as a single line, it includes two transmission paths: a transmission path for a transmission signal and a transmission path for a reception signal. Furthermore, transmission path 240 may use a LAN cable or the like.

[0050] As shown in FIG. 2, the master device 210 includes at least one packet generator 212 and at least one hub 220 .

[0051] The hub 220 includes a communication unit 213d communicatively connected to the packet generation unit 212 and a datagram analysis unit 218 (described later). In the hub 220, the communication unit 213d is communicatively connected to the communication units 213a and 213c, and the communication unit 213b is communicatively connected to the communication units 213a and 213c. The communication unit 213d is an interface on the master device 210 side. A transmitter 214d of the communication unit 213d transmits a signal to the communication unit 213a and also transmits a signal to the datagram analysis unit 218 of the master device 210. A receiver 215d of the communication unit 213d receives a signal from the communication unit 213c and also receives a signal from the packet generation unit 212 of the master device 210.

[0052] The communication units 213a to 213c are interfaces on the slave device groups 230a to 230c side. Each of the communication units 213a to 213c includes a pair of transmitters 214a to 214c that transmit packets (data signals), which are signals constituting command signals or data generated by the packet generator 212, to the connected slave device groups 230a to 230c, and receivers 215a to 215c that receive signals including data from the slave device groups 230a to 230c.

[0053] The packets received by the receivers 215a-215c include data indicating the device status from each component belonging to each slave device group 230a-230c and a response signal requested in the command signal. In this embodiment, signals including packets transmitted from the transmitters 214a-214c are sequentially received via each port by each component connected in a daisy chain in the slave device groups 230a-230c, and then a signal is returned from the component connected most downstream to the master device 210, which is the most upstream. The packets returned to the master device 210 are sent to the datagram analyzer 218, which analyzes the daisy chain connection status of each component belonging to each slave device group 230a-230c, and the CPU 211 generates a command signal to operate the required components.

[0054] The master device 210 adjusts the operation of each component belonging to the slave device groups 230a to 230c. For example, the master device 210 adjusts the flow rate of gas flowing through a gas flow path in which the MFC 2311 is installed. In this embodiment, the CPU 211 receives packets returned through each slave device group 230a to 230c, or in response to command signals from a host computer (not shown) that transmits command signals to multiple semiconductor manufacturing devices, including the plasma processing device 100, in a building in which the plasma processing device 100 is installed, and adjusts their operation. The CPU 211 then transmits a signal to the datagram generator 217 according to a predetermined procedure, procedure, or recipe pre-stored in the data storage unit 219. The CPU 211 then causes the datagram generator 217 to generate a datagram in which command signals and data for adjusting the operation of at least one component in each slave device group 230a to 230c are arranged in a predetermined order. The datagram generated by the datagram generator 217 is transmitted to the packet generator 212.

[0055] Each packet generator 212 generates a command signal or data (control data) for adjusting the operation of at least one component connected to the corresponding slave device group 230a-230c that is the adjustment target, specifically, data for commanding an operation related to the processing of semiconductor wafers 109 as a step in the manufacturing of semiconductor devices in plasma processing apparatus 100. Packet generator 212 is disposed in master device 210 and generates data according to the components in slave device groups 230a-230c.

[0056] The packet generation unit 212 generates data for adjusting the operation (for example, the flow rate or opening and closing of the flow path of each mass flow controller) of the mass flow controllers 2311, 2312, and 2313 connected to the corresponding communication unit 213a, for example, for the slave device group 230a. Similarly, the packet generation unit 212 generates data for adjusting the operation (for example, the flow rate or opening and closing of the flow path of each mass flow controller) of the mass flow controllers 2311, 2312, and 2313 connected to the corresponding communication unit 213b, for example, for the slave device group 230b. mand high frequency power matching boxes 2331 to 233 for each high frequency power supply. m and generates data for adjusting the operation of high frequency mixer 234. Similarly, packet generator 212 generates data for adjusting the operation of microwave power supply 235 and microwave power supply matching box 236 connected to corresponding slave device group 213c, for example, for slave device group 230c.

[0057] In this way, the packet generator 212 generates data for each component connected to each of the slave device groups 230a to 230c in association with each component, and stores the data in one packet. The packet may also include a command signal for at least one specific component.

[0058] In this embodiment, the communication units 213a to 213c of the hub 220 transmit packets containing command signals and data (instruction data) received from the packet generation unit 212 to the multiple slave device groups 230a to 230c and each of the components belonging to the slave device groups 230a to 230c at predetermined intervals via the transmission path 240. Similarly, the communication units 213a to 213c receive signals containing data in response to signals returned from each component of each slave device group 230a to 230c. Here, the response data may include, for example, data indicating whether the processing instructed by the instruction data has been completed successfully.

[0059] Upon receiving a command signal from CPU 211, datagram generation unit 217 writes instruction data, which is generated as a packet in packet generation unit 212, into a datagram or a data frame at predetermined intervals. The generated datagram or data frame is transmitted to packet generation unit 212.

[0060] The datagram analysis unit 218 also periodically executes a process of acquiring data indicating the operating status of each component from the response data obtained from each of the slave device groups 230a to 230c. The data indicating the operating status may include, for example, data indicating that the slave device groups 230a to 230c or each component belonging to these groups are operating normally, or data indicating that an abnormality has occurred in these groups.

[0061] Furthermore, the data obtained by the datagram analysis unit 218 is transmitted to the CPU 211, and command signals and data are calculated based on this data. Furthermore, a period for transmitting packets to each of the slave device groups 230a to 230c and executing processing therein, and a period for executing processing for obtaining data indicating the operating status from response data are calculated.

[0062] In this embodiment, EtherCAT, which is one of the industrial Ethernet standards, is used as a communication method in the network shown in Fig. 2, which is configured by the master device 210, the hub 220, and the slave device groups 230a to 230c. In EtherCAT, the master device 210 connected thereto transmits datagrams to the multiple slave device groups 230a to 230c, and the components included in these multiple slave device groups 230a to 230c read and write data on the fly from the datagrams received from the master device 210. In this case, communication between the master device 210 and the multiple slave device groups 230a to 230c is performed at a specific cycle using data called process data objects (PDOs).

[0063] Furthermore, communication is performed in response to a request from the master device 210 using data called a service data object (SDO). In this embodiment, which uses EtherCAT as the network communication method, at least one node among the nodes connected to the transmission path 240 functions as the master device 210, and the other nodes function as the slave device groups 230a to 230c (or the components belonging thereto). The master device 210 manages (adjusts) the timing of datagram communication on the network.

[0064] The communication units 213a to 213c of the master device 210 of this embodiment receive data from a datagram containing instruction data. Rapa The slave device groups 230a to 230c are then transmitted as packets generated by the packet generation unit 212 to each of the connected slave device groups 230a to 230c. Each component of each of the slave device groups 230a to 230c that receives the packets writes response data to the instruction data in a datagram in accordance with the instruction data assigned to it from the instruction data written in the datagram transmitted as a packet. The slave device groups 230a to 230c then transmit packets based on the datagrams in which the response data to the instruction data assigned to them has been written to the communication units 213a to 213c via the ports of the hub 220 to which the slave device groups 230a to 230c to which they belong are connected.

[0065] Packets received by receiving units 215a to 215c are sent to datagram analyzing unit 218 of master device 210, which detects response data contained in the packets and sends the response data to CPU 211. Data exchanged between master device 210 and slave device groups 230a to 230c (and each component belonging thereto) may include not only instruction data and response data, but also status data of each component of slave device groups 230a to 230c.

[0066] (Packet flow) Here, the flow of packets (data signals) between the master device 210 and the slave device groups 230a to 230c will be specifically described. First, the master device 210 transmits a packet generated by the packet generation unit 212 to the communication unit 213d of the hub 220. The communication unit 213d receives the packet transmitted from the master device 210 by the reception unit 215d, and transmits the packet to the communication unit 213a by the transmission unit 214d.

[0067] The communication unit 213a receives a packet from the communication unit 213d via the receiving unit 215a. The communication unit 213a transmits the packet to the slave device group 230a via the transmitting unit 214a. In the slave device group 230a, the packet is transmitted from the MFC 2311 to the mass flow controller 2312, the mass flow controller 2313, ..., the mass flow controller 2314, ..., the mass flow controller 2315, ..., the mass flow controller 2316, ..., the mass flow controller 2317, ..., the mass flow controller 2319, ..., the mass flow controller 2320, ..., the mass flow controller 2321, ..., the mass flow controller 2322, ..., the mass flow controller 2323, ..., the mass flow controller 2324, ..., the mass flow controller 2325, ..., the mass flow controller 2326, ..., the mass flow controller 2327, ..., the mass flow controller 2328, ..., the mass flow controller 2329 ... n Mass flow controller 231 n The packet that has reached the mass flow controller 231 n-1 , ... and back to the mass flow controller 2313, the mass flow controller 2312, and the mass flow controller 2311. The communication unit 213a receives the packet that has circulated through the slave device group 230a using the receiving unit 215a. The communication unit 213a transmits the packet to the communication unit 213b using the transmitting unit 214a.

[0068] Next, the communication unit 213b receives the packet from the communication unit 213a using the receiving unit 215b. The communication unit 213b transmits the packet to the slave device group 230b using the transmitting unit 214b. In the slave device group 230b, the packet is transmitted from the high frequency power source 2321 to the high frequency power source 2322. m , high frequency power matching box 2331 to high frequency power matching box 233 m, high-frequency mixer 234. The packet that has reached the component connected most downstream in slave device group 230b returns to high-frequency power supply 2321 via the components of slave device group 230b. Communication unit 213b receives the packet that has circulated through slave device group 230b using receiver 215b. Communication unit 213b transmits the packet to communication unit 213c using transmitter 214b.

[0069] Next, the communication unit 213c receives the packet from the communication unit 213b using the receiving unit 215c. The communication unit 213c transmits the packet to the slave device group 230c using the transmitting unit 214c. In the slave device group 230c, the packet is transmitted in this order through the microwave power supply 235 and the microwave power supply matching box 236. The packet that has reached the component connected to the most downstream side of the slave device group 230c returns to the microwave power supply 235 via the components of the slave device group 230c. The communication unit 213c receives the packet that has circulated through the slave device group 230c using the receiving unit 215c. The communication unit 213c transmits the packet to the slave device group 230c using the transmitting unit 214c. 214c The packet is transmitted to the communication unit 213d by the command.

[0070] Finally, communication unit 213d receives the packet via receiving unit 215d, and transmits the packet to datagram analysis unit 218 of master device 210, which will be described later.

[0071] In this way, packets transmitted from the master device 210 circulate between the hub 220 and the slave device groups 230a to 230c, and return to the master device 210. Note that the combination of the communication units 213a to 213c and the slave device groups 230a to 230c is not limited to this. The communication units connecting the slave device groups can be selected as appropriate.

[0072] (How to drive) Next, an example of the configuration of the control unit 170 and the slave device group according to the first embodiment and a flow of maintenance work for components belonging to the slave device group will be described with reference to Fig. 3 and Fig. 4. Fig. 3 is a block diagram schematically illustrating an example of the control unit 170 of the plasma processing apparatus according to the first embodiment and the slave device group connected thereto.

[0073] 3, hubs 220a and 220b are shown instead of hub 220 in FIG. 2. In FIG. 3, master device 210 constituting control unit 170 is directly connected to hub 220a, and hub 220b is further connected to hub 220a. Hubs 220a and 220b are provided with a plurality of communication units, and are connected to each other so as to be able to communicate via the communication units. Specifically, slave device group 230b1 is connected to hub 220a, and slave device group 230b2 is connected to hub 220b. 2 The multiple component devices connected to the two hubs 220a and 220b are divided into four groups according to specific purposes, and within each group, adjacent components are connected in a chain so as to be able to communicate with each other.

[0074] To explain the packet flow in more detail, the hub 220a receives the packet transmitted from the master device 210. The hub 220a transmits the packet to the slave device group 230b1. In the slave device group 230b1, the packet is transmitted from the high frequency power supply 2321 to the high frequency power supply 2322. m The packet circulates through the slave device group 230b1 until the hub 220a receives the packet. The hub 220a transmits the packet to the hub 220b.

[0075] The hub 220b receives the packet from the hub 220a. The hub 220b transmits the packet to the slave device group 230b2. In the slave device group 230b2, the packet circulates from the high frequency power supply matching box 2331 to the high frequency mixer 234. The hub 220b receives the packet that has circulated through the slave device group 230b2 and transmits it to the slave device group 230c. In the slave device group 230c, the packet circulates from the microwave power supply 235 to the component connected most downstream in the slave device group 230c. The hub 220b receives the packet that has circulated through the slave device group 230c and transmits it to the slave device group 230a. In the slave device group 230a, the packet circulates from the mass flow controller 2311 to the mass flow controller 231 n It travels around until.

[0076] Hub 220b receives the packet that has circulated through slave device group 230a, and then transmits the packet to hub 220a, which then transmits the packet to master device 210.

[0077] The slave device group 230b1 includes high frequency power supplies 2321 to 2322 which generate a bias potential above the semiconductor wafer 109 placed on the dielectric film 140 of the wafer placement electrode 120. m On the other hand, the slave device group 230b2 includes high frequency power supplies 2321 to 2322. m A plurality of high frequency power matching units 2331 to 233 corresponding to each of the m and high-frequency mixer 234, which are connected in a daisy chain in this order. In Fig. 3, the components belonging to slave device groups 230b1 and 230b2 are clearly separated, and some of the components belonging to one slave device group are not installed as components belonging to the other slave device group during operation of the plasma processing apparatus.

[0078] Similarly, the slave device group 230c includes a microwave power supply 235 and a microwave power supply matching box 236 for generating plasma in the plasma processing apparatus 100, and these are connected in a daisy chain. The slave device group 230a includes a mass flow controller 2311, a mass flow controller 2312, a mass flow controller 2313 to a mass flow controller 2314. n These are connected in a chain.

[0079] Microwave power supply 235 constitutes electric field generation power supply 106 arranged in the upper part of plasma processing apparatus 100, and is a power supply that forms an electric field of a microwave of 2.45 GHz. Note that electric field generation power supply 106 also includes microwave power matching box 236. Microwave power matching box 236 adjusts impedance so as to suppress the generation of reflected waves in waveguide 105.

[0080] High frequency power supply 2321~232 m are arranged at the bottom of the plasma processing apparatus 100. At least one high frequency power supply 232 is arranged in the plasma processing apparatus 100, and is electrically connected to the bias application electrode inside the wafer placement electrode 120 or the electrode base material 108. m The set of frequencies is capable of outputting high frequency power at a plurality of frequencies, and is configured to be able to switch the power of these frequencies every predetermined period, or to output one at 0 and the other at a predetermined value.

[0081] For example, the plasma processing apparatus 100 may include one high frequency power supply 232 capable of switching between 400 MHz and 800 MHz high frequency power output, or may include multiple high frequency power supplies 2321 to 2322 capable of outputting 400 MHz and 1.2 MHz high frequency power output. mmay be used, and the output from each may be switched at predetermined intervals and supplied to wafer-holding electrode 120. In Fig. 3, when creating the power supply conversion table, all of the high-frequency power supplies used for processing semiconductor wafer 109 are connected in a daisy chain and are connected to hub 220a and hub 220b or master device 210 so as to be able to communicate with each other.

[0082] High frequency power matching box 2331~233 m The plasma processing apparatus 100 is provided with high frequency power supplies 2321 to 2322 at its upper portion. m In the case where the plasma processing apparatus 100 is provided with one high frequency power supply 232 capable of switching between 400 MHz and 800 MHz high frequency power output, a high frequency power supply matching box 233 corresponding to the switching between 400 / 800 MHz is provided. In addition, the plasma processing apparatus 100 is provided with a plurality of high frequency power supplies 2321 to 2322 capable of outputting 400 MHz and 1.2 MHz high frequency power respectively. m When a plurality of high frequency power sources 2321 to 232 m High frequency power matching units 2331 to 233 according to the number of m and a high-frequency mixer 234 are provided in the plasma processing apparatus 100. In this example, the high-frequency power supplies 2321 to 232 m and high frequency power matching box 2331~233 m The slave device groups 230b1 and 230b2 are arranged in separate groups, i.e., slave device groups 230b1 and 230b2. Even when the specifications of plasma processing apparatus 100 are changed according to the processing required, slave device groups 230b1 and 230b2 are configured so that component work (e.g., replacement or addition of high frequency power supplies or high frequency power supply matching devices, or adjustment or modification of functions) can be performed in parallel.

[0083] Mass flow controllers 2311 to 231 are arranged on a route including a pipe through which a processing gas is supplied. nare arranged at the bottom of the plasma processing apparatus 100, and are arranged together in at least one box so that the pipelines that each constitute extend in parallel. In accordance with the processing conditions of the semiconductor wafer 109, the mass flow controllers 2311 to 2312 are operated in response to changes in gas conditions such as the type and composition of the gas used. n At least a portion of the can be replaced, removed or modified.

[0084] As described above, the multiple components are grouped according to their respective functions, such as supplying high frequency bias power, matching the high frequency bias power, supplying power or a magnetic field for plasma generation, and adjusting the amount of gas supplied into the processing chamber 104. The multiple slave device groups 230b1, 230b2, 230c, and 230a are each composed of components divided according to their functions.

[0085] 3, unlike FIG. 2, shows two hubs, with slave device group 230b1 connected to hub 220a, and slave device group 230b1 and slave device groups 230b2, 230c, and 230a connected to hub 220b. In the control unit 170 of this embodiment, the number of hubs 220 is not limited to one, as long as at least one hub 220 is directly connected to the master device 210. Also, when there are multiple hubs, the hubs are connected in a daisy chain so that they can communicate with each other. In FIG. 3 as well, ,Ma Hub 220a is directly connected to master device 210, and hub 220a and hub 220b are connected to each other so that they can communicate with each other.

[0086] (Component replacement work) The operation of the plasma processing apparatus 100 when maintenance work is performed on the radio frequency power supply (RF power supply) 2322 included in the slave device group 230b1 and the mass flow controller (MFC) 2312 included in the slave device group 230a, which are surrounded by a dashed line in FIG. 3, will be described below.

[0087] Fig. 4 is a flowchart showing a schematic flow of maintenance work for multiple components in the control unit and slave device group shown in Fig. 3. Fig. 4 shows the flow of work when maintenance work for the high frequency power supply 2322 and mass flow controller 2312 shown in Fig. 3 is performed in parallel. RF replacement work 508 refers to work performed on a specific high frequency power supply 2322 out of the multiple high frequency power supplies in slave device group 230b1, and MFC replacement work 509 refers to work performed on a specific mass flow controller 2312 out of the multiple mass flow controllers in slave device group 230a. The maintenance work in this embodiment is work to replace each device with a new device of the same type.

[0088] The overall flow of work is as follows. When work begins, advance preparation 501 is performed to perform maintenance work on high-frequency power supply 2322 and mass flow controller 2311. Next, pre-replacement work 502a and 502b are performed on high-frequency power supply 2322 and mass flow controller 2311, respectively, before replacement, followed by replacement work 503a and 503b. After that, post-replacement confirmation work 504a and 504b are performed on high-frequency power supply 2322 and mass flow controller 2311, to confirm that replacement work 503a and 503b have been performed normally. After that, conversion table creation 505 is performed on high-frequency power supply 2322.

[0089] Next, a test run mode 506 step is performed, and a test run of the plasma processing apparatus 100 is performed, including the replaced high frequency power supply 2322 and mass flow controller 2312. Furthermore, a discharge characteristic check 507 step is performed for the replaced high frequency power supply 2322, and predetermined characteristics of the plasma formed in the plasma processing apparatus 100 are detected using the replaced high frequency power supply 232b. These steps check for any malfunctions or failures that may have occurred during the replacement work and subsequent work. When it is confirmed that no malfunctions or failures have occurred, the work is completed.

[0090] 4, in the step of advance preparation 501, common operations for the high-frequency power matching box 2332 and the mass flow controller 2312 are performed on the plasma processing apparatus 100. Furthermore, in trial operation mode 506, the plasma processing apparatus 100 is operated in a state in which the high-frequency power matching box 2332 and the mass flow controller 2312 have been replaced. RF replacement work 508 refers to work performed on the high-frequency power supply 2322, and MFC replacement work 509 refers to work performed on the mass flow controller 2312. In this embodiment, it will be described below that the RF replacement work 508 and the MFC replacement work 509 can be performed in parallel.

[0091] (Replacement procedure flowchart) When the advance preparation 501 process is started, first, the operation of the plasma processing apparatus 100 is changed to a mode for maintenance and inspection work (maintenance mode) through the control unit 170 (master device 210). Specifically, the master device 210 transmits a command signal to each component to set it to the maintenance mode. If there are components for which a maintenance mode is not set in advance, such components are set to an operating state suitable for performing maintenance and inspection work. Next, the mass flow controllers 2311 to 2312 in the integrated gas box 181 are n The piping to which the mass flow controllers 2311 to 231 are connected is connected to an exhaust pipe for vacuum evacuation. n Gas is supplied into the processing chamber 104 from each of the mass flow controllers 2311 to 231 n The inside of the gas supply path including the mass flow controllers 2311 to 231 is then evacuated. n The flow rate is set to 0. Advance preparation 501 is a process common to RF replacement work 508 and MFC replacement work 509.

[0092] After the above-described advance preparation 501 work, pre-replacement work 502a and 502b are performed. However, maintenance work such as opening the inside of the processing chamber 104 to the atmosphere and cleaning or replacing components arranged inside the processing chamber 104 after opening to the atmosphere may be performed in parallel with the pre-replacement work 502a and 502b and subsequent work shown in FIG. 4.

[0093] Next, pre-replacement tasks 502a and 502b are performed. In RF replacement task 508 for the high-frequency power supply 2322, pre-replacement task 502a involves activating a power supply interrupter, such as a breaker, to stop the supply of power to the high-frequency power supply 2322. In MFC replacement task 509 for the mass flow controller 2312, pre-replacement task 502b involves the master device 210 checking for the presence or absence of gas leaks in the gas supply path (leak check). If a leak is confirmed, the location of the leak is detected and efforts are made to prevent the leak. The presence or absence of an abnormality in the mass flow controller 2312 to be replaced is then confirmed. Note that even when the supply of power to the high-frequency power supply 2322 is stopped, the master device 210 has a hot connect function, so it can specify the mass flow controller 2312 and perform the task of checking for the presence or absence of an abnormality.

[0094] Next, replacement work 503a to replace the high-frequency power supply 2322 and replacement work 503b to replace the mass flow controller 2312 are started. In replacement work 503a, first, it is confirmed that the power supply to the high-frequency power supply 2322 has been stopped and that the power supply to the high-frequency power supply 2322 has been turned off, and then all wiring and piping connected to the high-frequency power supply 2322 are removed, and the high-frequency power supply 2322 is removed. A new high-frequency power supply 2322 is newly installed, and the wiring and piping are installed in the reverse order to the previous one, and the power supply is turned on. Thereafter, the power supply to the high-frequency power supply 2322 is resumed.

[0095] In the replacement work 503b of the mass flow controller 2312, first, the wiring and piping for communication and power supply that are connected and attached to the mass flow controller 2312 are removed. Next, the screws and bolts that secure the mass flow controller 2312 to the bracket inside the integrated gas box 181 are loosened and removed, and the mass flow controller 2312 is removed from the bracket. After that, a new mass flow controller 2312 is attached and fixed to the bracket, and the wiring and piping are attached.

[0096] During the replacement work, the identification codes of each device, such as the serial numbers of the high frequency power supply 2322 and the mass flow controller 2312 before and after replacement, are confirmed and recorded.

[0097] Next, a post-replacement check 504a for the high frequency power supply 232b and a post-replacement check 504b for the mass flow controller 2312 are performed. In the post-replacement check 504a, a power supply cutoff device such as a breaker is turned off for the high frequency power supply 2322, thereby causing power to be supplied to the high frequency power supply 2322, and checking is performed to see if any problems have occurred with other devices in the plasma processing apparatus 100. Furthermore, the master device 210 checks whether the EtherCAT ID (identification signal or identification symbol) of the high frequency power supply 2322 in the slave device group 230b1 is a predetermined value.

[0098] Although the components themselves may be different after replacement, the master device 210 uses fixed addresses and therefore treats components connected to the network with the same addresses. In other words, for example, if the ID of the high-frequency power supply 2322 before replacement is RF2, the master device 210 can recognize the new high-frequency power supply after replacement connected in place of the high-frequency power supply 2322 in the slave device group 230b2 as a high-frequency power supply with an ID of RF2. Also, if the ID of the mass flow controller 2312 before replacement is MFC2, the master device 210 can recognize the new mass flow controller after replacement connected in place of the mass flow controller 2312 in the slave device group 230a as a mass flow controller 2312 with an ID of MFC2.

[0099] In this embodiment, an ID is individually assigned to each of the multiple component devices connected to each of the slave device groups 230b1, 230b2, 230c, and 230a, and data and signal values indicating the ID assigned to each component device are stored or held, for example, in data storage unit 219. The data and command signals corresponding to each component generated by packet generation unit 212 as described above are associated with signals indicating the ID, and are identified as signals addressed to each component at the component to which the packet arrives, and the operation of the component device is adjusted in accordance with the signals. After this, the power supply to high-frequency power supply 2322 is temporarily stopped, and then the high-frequency power supply 2322 is connected to an electronic device such as a setting PC, and power is supplied separately, and initial values for the operation of high-frequency power supply 2322 are set.

[0100] In the confirmation operation 504b after the replacement of the mass flow controller 2312, the master device 210 checks the mass flow controller 2312 after the replacement using a predetermined gas, for example, He. toAfter another leak check is performed on the target mass flow controller 2312, the zero point is set for the mass flow controller 2312. Next, on a display (not shown) connected to the control unit 170, the monitored values of the operation of the target mass flow controller 2312, which are returned to the master device 210 from the target mass flow controller 2312, are confirmed, and the flow rate value in particular is recorded.

[0101] Then, the mass flow controllers 2311 to 231 in the integrated gas box 181 n Gas supply to the mass flow controllers 2311 to 231 n The data including the flow rate value transmitted from the mass flow controller 2312 is displayed on the display, and the value of the replaced mass flow controller 2312 is checked to detect whether there is an abnormality.

[0102] Next, conversion table creation step 505 is performed on high frequency power supply 2322. In this step, master device 210 adjusts the output of high frequency power supply 2322 so that the difference between the set value and the actual output value of the replaced and installed new high frequency power supply 2322 falls within a predetermined tolerance range.

[0103] First, with the supply of power to the high frequency power supply 2322 temporarily stopped, a separate power meter is connected to the high frequency power supply 2322, and input / output values of the power meter are set corresponding to reference outputs according to a plurality of operation modes, including high output and low output states, of the high frequency power supply 2322. Thereafter, power is supplied to the high frequency power supply 2322, and with the output value of the high frequency power supply 2322 set to be the same as the output value of the power meter, the output value of the high frequency power supply 2322, which is contained in the EtherCAT signal returned from the high frequency power supply 2322 and displayed on a display connected to the control unit 170, is confirmed. If the difference between the monitor value of the output shown on the display and the output value displayed on the power meter is greater than a threshold, the output of the high frequency power supply 232b is adjusted so that the value falls within the allowable range.

[0104] After the above adjustment is completed, the power supply from the high frequency power supply 2322 is stopped and the power meter is removed.

[0105] Next, the plasma processing apparatus 100 is shifted to a trial operation mode (AUTO / Standby Mode) by the master device 210. In this state, plasma is generated in the vacuum chamber 101 under predetermined processing conditions, and processing is performed. Discharge characteristics such as the discharge and plasma density of the plasma while the plasma is generated in the processing are detected, and it is determined whether or not these satisfy the criteria for which predetermined tolerances are defined. If it is determined that the conditions are satisfied, the replacement work is completed.

[0106] When performing maintenance work on components belonging to the slave device groups 230b1, 230b2, 230c, and 230a in the steps shown in FIG. 4, the high frequency power supplies 2321 to 2322 are used for a plurality of consecutive steps from pre-replacement work 502a and 502b including advance preparation 501 to post-replacement confirmation work 504a and 504b and conversion table creation step 505 for the high frequency power supply 232. m and Mass Flow Controllers 2311-231 n Work on these items can be done in parallel.

[0107] (Configuration of Comparative Example) 5 is a block diagram showing an example of a control unit of a plasma processing apparatus and components connected thereto as a comparative example to FIG. 3. In FIG. 5, the control unit 170a of the plasma processing apparatus includes high-frequency power supplies 2321 to 2322. m are connected in a daisy chain in this order. m The downstream side of the high frequency power supply 2321~232 m A plurality of high frequency power matching units 2331 to 233 corresponding to each of the m and high frequency mixer 234 are connected in a daisy chain in this order.

[0108] Similarly, a microwave power supply 235 and a microwave power supply matching box 236 for generating plasma in the plasma processing apparatus 100, and downstream of these, mass flow controllers 2311, 2312, 2313, and 2314 are provided. n 5, multiple components including high frequency power supplies 2321 and 2322 are connected in a daisy chain, and the components are connected to each other and to control unit 170a so as to be able to communicate with each other, thereby forming one slave device group 402.

[0109] (Replacement work for comparison example) In the comparative example, high frequency power supplies 2321 to 232 m and high frequency power matching boxes 2331 to 233 m , a microwave power supply 235, a microwave power supply matching box 236, and mass flow controllers 2311 to 231 n are connected to each other in a daisy chain as a slave device group. For this reason, when replacing the high frequency power supply 2322 and the mass flow controller 2312, at least the pre-replacement operations 502a and 502b cannot be performed in parallel, and one must be performed before the other.

[0110] For example, if pre-replacement work 502b for the mass flow controller 2312 is performed first, and then pre-replacement work 502a for the high-frequency power supply 2322 is performed, it is possible to perform replacement work 503b and pre-replacement work 502a in parallel, but it is difficult to subsequently perform the replacement work 503a for the high-frequency power supply 2322, post-replacement confirmation work 504a, and conversion table creation 505 in parallel with the post-replacement confirmation work 504b and subsequent work steps for the mass flow controller 2312. This is because the pre-replacement work 502a for the high-frequency power supply 2322 and the subsequent steps up to conversion table creation 505 include work performed with power turned off to the high-frequency power supply 2322. For this reason, after replacing the mass flow controller 2312, which is a component device connected downstream of the high-frequency power supply 2322 that is part of the slave device group connected to the master device 210, work using communication over EtherCAT, such as checking the values of data from the mass flow controller 2312, cannot be performed unless power is supplied to the high-frequency power supply 2322.

[0111] The same is true in the comparative example where a series of high frequency power supplies including high frequency power supply 2322 are connected downstream of mass flow controller 2312 with respect to master device 210 in slave device group 402. Even if pre-replacement operations 502a and 502b are performed in order, followed by the other, and then replacement operations 503a and 503b are performed in parallel, it becomes difficult to perform the subsequent post-replacement confirmation operation 504a and conversion table creation 505 steps and the post-replacement confirmation operation 504b step in parallel, as in the above case.

[0112] (Actions and Effects) On the other hand, in this embodiment, as described above, high frequency power supplies 2321 to 2322 are connected to the hub 220 connected to the master device 210 or to multiple ports of multiple hubs 220a and 220b connected in a daisy chain. m , high frequency power matching box 2331~233 m Alternatively, a high frequency mixer 234, a microwave power supply 235, a microwave power supply matching box 236, and mass flow controllers 2311 to 231n Each of the slave device groups 230b1, 230b2, 230c, and 230a includes a plurality of slave device groups 230b1, 230b2, 230c, and 230a, each of which includes a plurality of component devices grouped by function. Therefore, even when maintenance work is performed on component devices belonging to more than one of the slave device groups 230b1, 230b2, 230c, and 230a, the work can be performed in parallel, shortening the work time, reducing downtime of the plasma processing apparatus 100, and improving processing efficiency.

[0113] Furthermore, even when maintenance work is performed on any one of the component devices, the component devices connected to hub 220 on the upstream side of the slave device group to which that component device belongs can communicate with master device 210 via hub 220, making it possible to operate plasma processing apparatus 100 using these upstream component devices. This makes it possible to improve the efficiency of work performed on plasma processing apparatus 100.

[0114] [Example 2] The second embodiment differs from the first embodiment in that a slave device group is further connected in a daisy chain to the slave device group of the first embodiment. In the following description, the same or equivalent components as those of the first embodiment are denoted by the same reference numerals, and the description thereof will be simplified or omitted.

[0115] 6 is a block diagram illustrating an example of a control unit 170 and slave device groups connected thereto in a plasma processing apparatus according to Example 2. Slave device group 230d includes at least one element device among the multiple components included in plasma processing apparatus 100, excluding the element devices included in slave device groups 230b1, 230b2, 230c, and 230a.

[0116] The slave device group 230d includes a component 2501, a component 2502, a component 2503, and then a component 2504. p(p is an integer equal to or greater than 1). Here, the slave device group 230d and the slave device group 230a are configured so that component work (e.g., component replacement, addition, or function adjustment or modification) is not performed in parallel. The slave device group 230d is connected to the slave device group 230a in a daisy chain fashion.

[0117] (Actions and Effects) In the first embodiment, the slave device groups 230b1, 230b2, 230c, and 230a are configured to enable parallel component operations among the slave device groups. The hub 220 has at least two ports, and a slave device group is connected to each of the two ports, enabling parallel component operations among the slave device groups. In contrast, in the second embodiment, the slave device group 230d is connected to the slave device group 230a in a daisy chain manner, and the slave device group 230d is configured so that component operations are not performed in parallel with the slave device group 230a. This allows for flexible configuration of the slave device groups, improving the degree of freedom when configuring a control network for the components included in the plasma processing apparatus 100. Furthermore, it is possible to prevent an increase in the number of ports of the hub 220, and also to take measures regarding the routing of wiring.

[0118] In addition, one communication unit of the hub 220 is connected to the slave device group 230d and the slave device groupWhile an example has been shown in which slave device group 230a is connected in a daisy chain with slave device group 230b1, 230b2, and 230c, the present disclosure is not limited to this. Slave device group 230d may also be configured so that component work is not performed in parallel with any of slave device groups 230b1, 230b2, and 230c. Also, while an example has been shown in which two slave device groups, slave device group 230a and slave device group 230d, are connected in a daisy chain with respect to one communication unit of hub 220b, two or more slave device groups may be connected in a daisy chain.

[0119] The following are examples of possible embodiments of the present invention, but the present invention is not limited to these. (Aspect 1) A manufacturing apparatus including a plurality of element devices and a control unit that transmits data signals to the plurality of element devices, The plurality of element devices are grouped according to their respective functions, a first slave device group including at least one element device among the plurality of element devices; a second slave device group including at least one element device from the plurality of element devices excluding the element devices included in the first slave device group, The control unit transmits the data signal to the first slave device group and the second slave device group. (Aspect 2) The manufacturing apparatus according to embodiment 1, The control unit a master device that generates the data signal; a hub connected to the master device and having at least a first communication unit and a second communication unit; the first slave device group is connected to the first communication unit of the hub; The manufacturing device has the second slave device group connected to the second communication unit of the hub. (Aspect 3) The manufacturing apparatus according to embodiment 1 or 2, The control unit a master device that generates the data signal; a master device side communication unit that receives the data signal transmitted from the master device, the first communication unit receives the data signal from the master device communication unit and receives the data signal that has circulated through the first slave device group; The second communication unit receives the data signal from the first communication unit, receives the data signal that has circulated through the second slave device group, and transmits the data signal to the master device side communication unit. (Aspect 4) 4. The manufacturing apparatus according to any one of aspects 1 to 3, comprising: The control unit, the first slave device group, and the second slave device group are in accordance with a communication method to which EtherCAT is applied. (Aspect 5) 5. The manufacturing apparatus according to any one of aspects 1 to 4, The first slave device group Puo and the second slave device group is composed of element devices divided by function, The manufacturing apparatus is configured so that the first slave device group and the second slave device group can perform operations of element devices in parallel. (Aspect 6) 6. The manufacturing apparatus of any one of aspects 1 to 5, The plurality of element devices further comprising a third slave device group including at least one element device from among the plurality of element devices, excluding the element devices included in the first slave device group and the element devices included in the second slave device group; the third slave device group and the first slave device group are configured so that element device operations are not performed in parallel, The third slave device group is connected to the first slave device group in a daisy chain fashion. (Aspect 7) 7. The manufacturing apparatus of any one of aspects 1 to 6, the first slave device group includes a plurality of high frequency power sources; The second slave device group includes a plurality of mass flow controllers. (Aspect 8) A method for operating the manufacturing apparatus according to any one of aspects 1 to 7, comprising: The replacement work of a predetermined high frequency power supply among the plurality of high frequency power supplies in the first slave device group is performed by: a first pre-replacement operation of stopping the supply of power from the predetermined high frequency power source; a first replacement operation of replacing the predetermined high frequency power source; a first post-replacement confirmation operation of supplying power to the replaced high frequency power supply; and creating a conversion table for adjusting the output of the replaced high frequency power source, The replacement work of a predetermined mass flow controller among the plurality of mass flow controllers in the second slave device group is performed by: A second pre-exchange procedure involves checking for leaks; Replace the specified mass flow controller. Second Replacement work and and a second post-replacement confirmation operation of performing a leak check on the replaced mass flow controller. An operating method in which the replacement work of the predetermined high frequency power source and the replacement work of the predetermined mass flow controller can be performed in parallel. [Explanation of symbols]

[0120] 100... plasma processing apparatus, 101... vacuum vessel, 102... shower plate, 102a... gas introduction hole, 103... dielectric window, 104... processing chamber, 105... waveguide, 106... electric field generation power supply, 107... magnetic field generation coil, 108... electrode substrate, 109... semiconductor wafer, 110... vacuum exhaust port, 111... conductive film, 112... ground, 113... susceptor ring, 116... plasma, 120... wafer mounting electrode 120a... placement surface, 120b... upper surface, 124... high frequency power supply, 125... high frequency filter, 126... DC power supply, 129... matching box, 140... dielectric film, 160... electric field / magnetic field generating unit, 170, 170a... control unit, 181... integrated gas box, 185... vacuum pump, 186... exhaust amount adjustment valve, 210... master device, 212... packet generating unit, 213a to 213d... communication unit (port), 214a to 214d... 4 d...transmitting unit, 215a to 215d...receiving unit, 217...datagram generating unit, 218...datagram analyzing unit, 219...data storage unit, 220, 220a, 220b...hub, 230a to 230d, 230b1, 230b2, 402...slave device group, 2311 to 231 n ...Mass flow controller (MFC), 2321-232 m ...High frequency power supply (RF power supply), 2331~233 m ...High frequency power matching box (RF matching box), 234...High frequency mixer (RF mixer), 235...Microwave power supply, 236...Microwave power matching box, 240...Transmission line, 2501 to 250 p ...component, 1016...gas supply pipe, 1017...opening / closing valve, 1232...high frequency power supply.

Claims

1. A manufacturing apparatus including a plurality of element devices and a control unit that transmits data signals to the plurality of element devices, The plurality of element devices are grouped according to their respective functions, a first slave device group including at least one element device among the plurality of element devices; a second slave device group including at least one element device from among the plurality of element devices excluding the element devices included in the first slave device group; a third slave device group including at least one element device from among the plurality of element devices excluding the element devices included in the first slave device group and the element devices included in the second slave device group, the third slave device group and the first slave device group are configured so that element device operations are not performed in parallel, the third slave device group is connected to the first slave device group in a daisy chain manner, The control unit transmits the data signal to the first slave device group and the second slave device group.

2. A manufacturing apparatus including a plurality of element devices and a control unit that transmits data signals to the plurality of element devices, The plurality of element devices are grouped according to their respective functions, a first slave device group including at least one element device among the plurality of element devices; a second slave device group including at least one element device from the plurality of element devices excluding the element devices included in the first slave device group, the first slave device group includes a plurality of high frequency power supplies, and the second slave device group includes a plurality of mass flow controllers, The control unit transmits the data signal to the first slave device group and the second slave device group.

3. The manufacturing apparatus according to claim 1 or 2, The control unit a master device that generates the data signal; a hub connected to the master device and having at least a first communication unit and a second communication unit; the first slave device group is connected to the first communication unit of the hub; The manufacturing device, wherein the second slave device group is connected to the second communication unit of the hub.

4. The manufacturing apparatus according to claim 3, The control unit a master device that generates the data signal; a master device side communication unit that receives the data signal transmitted from the master device, the first communication unit receives the data signal from the master device communication unit and receives the data signal that has circulated through the first slave device group; The second communication unit receives the data signal from the first communication unit, receives the data signal that has circulated through the second slave device group, and transmits the data signal to the master device side communication unit.

5. The manufacturing apparatus according to claim 1 or 2, The control unit, the first slave device group, and the second slave device group comply with a communication method to which EtherCAT is applied.

6. The manufacturing apparatus according to claim 1 or 2, the first slave device group and the second slave device group are configured by element devices divided by function, The manufacturing apparatus is configured so that the first slave device group and the second slave device group can perform operations of element devices in parallel. Manufacturing equipment, including trolleys.

7. A method for operating the manufacturing apparatus according to claim 2, The replacement work of a predetermined high frequency power supply among the plurality of high frequency power supplies in the first slave device group is performed by: a first pre-replacement operation of stopping the supply of power from the predetermined high frequency power source; a first replacement operation of replacing the predetermined high frequency power source; a first post-replacement confirmation operation of supplying power to the replaced high frequency power supply; and creating a conversion table for adjusting the output of the replaced high frequency power source, The replacement work of a predetermined mass flow controller among the plurality of mass flow controllers in the second slave device group is performed by: A second pre-replacement operation of performing a leak check; a second replacement operation of replacing the predetermined mass flow controller; a second post-replacement confirmation operation of performing a leak check on the replaced mass flow controller. An operating method in which the replacement work of the predetermined high frequency power source and the replacement work of the predetermined mass flow controller can be performed in parallel.

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