quantum devices

Abstract

To provide a quantum device capable of preventing positional deviation of a contact piece.SOLUTION: A quantum device 1 comprises: a quantum element QE provided with a quantum circuit; a socket 40 including a contact piece 47 which is in contact with a terminal of the quantum element QE and a housing 45 which supports the contact piece 47; and a board 50 including a board substrate 55. At least one of the housing 45 and the board substrate 55 has a hole. The other one of the housing 45 and the board substrate 55 includes: a fixed part located inside the hole; and a body part other than the fixed part. The fixed part and the body part are formed integrally with each other.SELECTED DRAWING: Figure 2

Description

[Technical Field]

[0001] The present invention relates to quantum devices. [Background technology]

[0002] Patent Documents 1 to 3 describe measuring devices having a socket structure in which an electronic circuit unit and an evaluation board are connected by contacts (movable pins). Patent Document 4 describes a quantum device having a quantum circuit. [Prior art documents] [Patent documents]

[0003] [Patent Document 1] Japanese Patent Application Laid-Open No. 2002-148306 [Patent Document 2] Japanese Patent Application Laid-Open No. 2004-335534 [Patent Document 3] Japanese Patent Application Laid-Open No. 2004-119945 [Patent Document 4] Japanese Patent Publication No. 2020-038976 Summary of the Invention [Problem to be solved by the invention]

[0004] Quantum computers require the use of superconductivity, which requires stable electrical connections from room temperature to cryogenic temperatures. However, for example, when the structures described in Patent Documents 1 to 3 are used at low temperatures, the difference in linear expansion coefficient between the socket housing, which thermally shrinks the most, and other materials such as the board can cause cumulative errors due to thermal shrinkage and the combination of multiple components, which can lead to electrical disconnections.

[0005] In order to reduce the maximum amount of misalignment between the quantum chip / interposer and the board and the contacts, it is necessary to control the direction and amount of shrinkage, but Patent Documents 1 to 3 do not provide such a definition.

[0006] One of the objects of the present disclosure has been made to solve such problems, and is to provide a quantum device that can suppress misalignment of contacts. [Means for solving the problem]

[0007] The quantum device according to the present disclosure comprises a superconducting element containing a superconducting material, a socket including a contactor in contact with a terminal of the superconducting element and a housing supporting the contactor, and a board including a board substrate, wherein at least one of the housing and the board substrate has a hole, and the other of the housing and the board substrate includes a fixing portion disposed inside the hole and a main body portion other than the fixing portion, and the fixing portion and the main body portion are integrally molded.

[0008] Furthermore, the quantum device according to the present disclosure comprises a superconducting element containing a superconducting material, a socket including a contactor in contact with a terminal of the superconducting element and a housing supporting the contactor, and a board including a board substrate, wherein at least a portion of the superconducting element, the housing, and the board substrate are in contact with a cooling base having a cooling function, at least one of the housing and the board substrate has a first hole, and the other of the housing and the board substrate includes a first fixing portion arranged inside the first hole and a first main body portion other than the first fixing portion, the first fixing portion and the first main body portion being integrally molded, and at least one of the cooling base and the board substrate has a second hole, and the other of the cooling base and the board substrate includes a second fixing portion arranged inside the second hole and a second main body portion other than the second fixing portion, and the second fixing portion and the second main body portion are integrally molded. [Effects of the Invention]

[0009] According to the present disclosure, it is possible to provide a quantum device that can suppress misalignment of contacts. [Brief explanation of the drawings]

[0010] [Figure 1] 1 is a plan view illustrating the configuration of a quantum device according to a first embodiment. [Figure 2] 2 is a cross-sectional view illustrating the configuration of the quantum device according to the first embodiment, showing a cross section taken along line II-II in FIG. [Figure 3] 1 is a cross-sectional view illustrating a quantum device according to a first embodiment. [Figure 4] 1 is an exploded perspective view illustrating a quantum device according to a first embodiment. [Figure 5] 10 is a plan view illustrating a fixing portion according to another example of the first embodiment. FIG. [Figure 6] 10 is a plan view illustrating a fixing portion according to another example of the first embodiment. FIG. [Figure 7] FIG. 1 is a plan view illustrating a quantum device according to a comparative example. [Figure 8] 8 is a cross-sectional view illustrating a quantum device according to a comparative example, taken along line VIII-VIII in FIG. 7. [Figure 9] FIG. 10 is a plan view schematically illustrating a state before cooling of the fixing portion and main body portion of the housing and the board substrate according to the comparative example. [Figure 10] 10 is a cross-sectional view taken along line XX in FIG. 9, schematically illustrating the fixing portion and main body portion of the housing according to the comparative example, and the board substrate in a state before being cooled. [Figure 11] 10 is a plan view schematically illustrating the state after cooling of the fixing portion and main body portion of the housing and the board substrate according to the comparative example. FIG. [Figure 12] 12 is a cross-sectional view taken along line XII-XII in FIG. 11, schematically illustrating the state of the fixing portion and main body portion of the housing according to the comparative example and the board substrate after cooling. [Figure 13] 12 is a cross-sectional view taken along line XII-XII in FIG. 11, schematically illustrating the state of the fixing portion and main body portion of the housing according to the comparative example and the board substrate after cooling. [Figure 14] 10 is a plan view schematically illustrating the state after cooling of the fixing portion and main body portion of the housing and the board substrate according to the comparative example. FIG. [Figure 15]15 is a cross-sectional view taken along line XV-XV in FIG. 14, schematically illustrating the state of the fixing portion and main body portion of the housing according to the comparative example and the board substrate after cooling. [Figure 16] 1 is a plan view schematically illustrating a state before cooling of a fixing portion and a main body portion of a housing according to a first embodiment, and a board substrate. [Figure 17] 17 is a cross-sectional view taken along line XVII-XVII in FIG. 16, schematically illustrating the fixing portion and main body portion of the housing and the board substrate according to the first embodiment in a state before cooling. [Figure 18] 1 is a plan view schematically illustrating a state before cooling of a fixing portion and a main body portion of a housing according to a first embodiment, and a board substrate. [Figure 19] 18. FIG. 18 is a cross-sectional view showing a schematic example of the fixing portion and main body portion of the housing and the board substrate according to the first embodiment before cooling, taken along line XVIIII-XVIIII in FIG. [Figure 20] 10 is a cross-sectional view illustrating a quantum device according to another example of the first embodiment. FIG. [Figure 21] FIG. 2 is a plan view illustrating the configuration of a quantum device according to a first modification of the first embodiment. [Figure 22] 22 is a cross-sectional view illustrating the configuration of a quantum device according to a first modification of the first embodiment, taken along line XXII-XXII of FIG. 21. [Figure 23] 10 is a cross-sectional view illustrating the configuration of a quantum device according to a second modification of the first embodiment. FIG. [Figure 24] 10 is a cross-sectional view illustrating a quantum element and a cooling base in a quantum device according to a second modification of the first embodiment. FIG. [Figure 25] 10 is a plan view illustrating a recess and a counterbore of a cooling base according to a second modification of the first embodiment. FIG. [Figure 26] 10 is a cross-sectional view illustrating an adhesive layer or a bonding layer according to a third modification of the first embodiment. FIG. [Figure 27] 10 is a cross-sectional view illustrating a space between a quantum chip and an inner surface of a recess according to a fourth modification of the first embodiment. FIG. [Figure 28]10 is a cross-sectional view illustrating a quantum device according to a fifth modification of the first embodiment. FIG. [Figure 29] 13 is a cross-sectional view illustrating an example of a depression formed in the bottom of the recess of the cooling base according to Modification 6 of Embodiment 1. FIG. [Figure 30] 13 is a plan view illustrating an example of a depression formed in the bottom of the recess of the cooling base according to Modification 6 of Embodiment 1. FIG. [Figure 31] 13 is a cross-sectional view illustrating an example of a depression formed in the bottom of the recess of the cooling base according to Modification 7 of Embodiment 1. FIG. [Figure 32] 13 is a cross-sectional view illustrating an example of a depression formed at the bottom of the recess of the cooling base according to Modification 8 of Embodiment 1. FIG. [Figure 33] 13 is a cross-sectional view illustrating a through-hole formed in the bottom of a recess of a cooling base according to a ninth modification of the first embodiment. FIG. [Figure 34] 13 is a cross-sectional view illustrating a quantum element and a cooling base in a quantum device according to a tenth modification of the first embodiment. FIG. [Figure 35] 13 is a cross-sectional view illustrating a quantum element and a cooling base in a quantum device according to an eleventh modification of the first embodiment. FIG. [Figure 36] 12 is a cross-sectional view illustrating a quantum element and a cooling base in a quantum device according to a twelfth modification of the first embodiment. FIG. DETAILED DESCRIPTION OF THE INVENTION

[0011] For clarity of explanation, the following description and drawings have been omitted and simplified as appropriate. In addition, the same elements in each drawing are given the same reference numerals, and duplicate explanations are omitted as necessary.

[0012] (Embodiment 1) A quantum device according to a first embodiment will be described. The quantum device of this embodiment includes a quantum element, a socket, and a board that utilize superconductivity in the quantum computing domain. Quantum computing is a domain that manipulates data using quantum mechanical phenomena (qubits). Quantum mechanical phenomena include superposition of multiple states (quantum variables simultaneously taking on multiple different states) and entanglement (a state in which multiple quantum variables are related regardless of space or time). The quantum element is provided with a quantum circuit that generates qubits.

[0013] First, the quantum device configuration will be described, including the quantum element, socket, and board. The cooling base that cools the quantum device will also be described. Next, a comparative example will be described, and the effects of the quantum device of this embodiment will be explained in comparison with the comparative example.

[0014] <Quantum devices> FIG. 1 is a plan view illustrating the configuration of a quantum device according to embodiment 1. FIG. 2 is a cross-sectional view illustrating the configuration of the quantum device according to embodiment 1, showing a cross section taken along line II-II in FIG. 1. As shown in FIGS. 1 and 2, the quantum device 1 includes a superconducting element, a socket 40, and a board 50. In this embodiment, a quantum element QE is used as an example of a superconducting element that includes a superconducting material and operates in a superconducting state. Therefore, in this embodiment, the superconducting element is a quantum element QE. Note that the superconducting element is not limited to a quantum element QE as long as it includes a superconducting material and operates in a superconducting state. The quantum element QE is in contact with a cooling base 30.

[0015] Here, for ease of explanation of the quantum device 1, XYZ orthogonal coordinate axes are introduced. For example, the lower surface of the quantum element QE in contact with the cooling base 30 is defined as the XY plane, and the direction perpendicular to the XY plane is defined as the Z axis direction. The +Z axis direction is defined as the upward direction, and the −Z axis direction is defined as the downward direction. Note that the terms upward and downward are used for ease of explanation and do not indicate the directions in which the quantum device 1 will be placed when actually used.

[0016] The quantum device QE is disposed on the cooling base 30. The surface of the quantum device QE on the +Z-axis direction side is called the terminal surface QE1. The terminals of the quantum device QE are formed on the terminal surface QE1. The quantum device QE may include one or more quantum chips, or may include one or more quantum chips and one or more interposers. If the quantum device QE includes only a quantum chip, the quantum chip has the terminal surface QE1. If the quantum device QE includes a quantum chip and an interposer, the interposer may have the terminal surface QE1.

[0017] The quantum element QE is provided with a quantum circuit. For example, the quantum chip includes at least a part of the quantum circuit. The interposer may not include a quantum circuit, or may include a part of the quantum circuit. The quantum element QE may include multiple quantum chips or multiple interposers. In the quantum element QE, multiple quantum chips may be stacked in the Z-axis direction or may be arranged side by side in the XY plane. In the quantum element QE, multiple interposers may be stacked in the Z-axis direction or may be arranged side by side in the XY plane. The following describes a case where the quantum element QE includes one quantum chip and one interposer.

[0018] Fig. 3 is a cross-sectional view illustrating the quantum device QE according to embodiment 1. Fig. 4 is an exploded perspective view illustrating the quantum device QE according to embodiment 1. As shown in Figs. 3 and 4, the quantum device QE includes a quantum chip 10 and an interposer 20.

[0019] The quantum chip 10 includes a chip substrate 15 and a wiring layer 16. The chip substrate 15 includes, for example, silicon (Si). Note that the chip substrate 15 is not limited to one containing silicon, and may include other electronic materials such as sapphire or compound semiconductor materials (group IV, group III-V, group II-VI), as long as the quantum chip 10 can perform information processing using quantum states. Furthermore, a single crystal is preferable, but polycrystalline or amorphous materials are also acceptable.

[0020] The chip substrate 15 is, for example, plate-shaped and has one plate surface and another plate surface opposite the one plate surface. One plate surface is called the first surface 11, and the other plate surface is called the second surface 12. Therefore, the quantum chip 10 and the chip substrate 15 have the first surface 11 and the second surface 12. For example, the first surface 11 and the second surface 12 are rectangular. In the quantum device QE, the first surface 11 faces the interposer 20. The first surface 11 is mounted on the interposer 20 by bumps BP.

[0021] The wiring layer 16 is provided on the first surface 11 side of the chip substrate 15. The wiring layer 16 includes a superconducting material such as niobium (Nb). Note that the superconducting material used for the wiring layer 16 is not limited to niobium (Nb), and may be, for example, niobium nitride, aluminum (Al), indium (In), lead (Pb), tin (Sn), rhenium (Re), palladium (Pd), titanium (Ti), tantalum (Ta), tantalum nitride, or an alloy containing at least one of these.

[0022] The wiring layer 16 includes a quantum circuit 17. The quantum circuit 17 includes a resonator 17c having a loop circuit 17b in which superconducting material is connected in a circular fashion by Josephson junctions 17a. The material used for the Josephson junction is preferably Al, but other superconducting materials may also be used. The quantum circuit 17 is configured to utilize the resonator 17c in a quantum state in superconductivity. In this way, the quantum chip 10 includes the quantum circuit 17 and operates using the quantum state.

[0023] The wiring layer 16 is mounted on the interposer 20 via bumps BP. Thus, the quantum chip 10 is flip-chip mounted on the interposer 20.

[0024] The bump BP may include the above-mentioned superconducting material. The bump BP may include the same superconducting material as the wiring layer 16, or may include a different superconducting material from that of the wiring layer 16. Furthermore, when the bump BP includes multiple metal layers, it is preferable that at least one layer includes a superconducting material. The bump BP may be a layer including Nb (the wiring surface of the quantum chip 10) / In (Sn, Pb, and / or an alloy containing at least one of these) / Ti / Nb (the wiring surface of the interposer 20) / Cu, or a layer including Nb (the wiring surface of the quantum chip 10) / Nb (the wiring surface of the interposer 20) / Cu, or a layer including Nb (the wiring surface of the quantum chip 10) / In (Sn, Pb, and / or an alloy containing at least one of these) / Ta (the wiring surface of the interposer 20) / Cu. Furthermore, in the case of a bump BP including Al and In, TiN may be used as a barrier layer to prevent alloying between Al and In. In this case, the bump BP may be a layer including Al (wiring surface of quantum chip 10) / Ti / TiN / In (Sn, Pb, and alloys containing at least one of these) / TiN / Ti / Al (wiring surface of interposer 20) / Cu. Here, Ti is an adhesive layer. A preferred flip-chip connection is Nb (wiring of quantum chip 10) / In / Ti / Nb (wiring surface of interposer 20) / Cu, or Nb (wiring of quantum chip 10) / Nb (wiring surface of interposer 20) / Cu. It is preferable to add a thickness of Cu in the range of 2 to 10 μm to the 2 μm thickness of the interposer wiring layer 23 to provide a bump with a diameter of 100 μm.

[0025] The interposer 20 includes interposer wiring layers 23 and 24, an interposer substrate 25, and through via materials (though vias, hereinafter referred to as TVs 26). Note that the TVs 26 are omitted from Figure 3 to avoid cluttering the drawing.

[0026] The interposer substrate 25 is, for example, plate-shaped. The interposer substrate 25 contains, for example, silicon (Si). Note that the interposer substrate 25 is not limited to one containing silicon, and may contain other electronic materials such as sapphire, compound semiconductor materials (Group IV, Group III-V, Group II-VI), glass, ceramics, etc., as long as the quantum chip 10 can be mounted thereon. The surface of the interposer substrate 25 is preferably covered with a silicon oxide film (SiO2, TEOS film, etc.). The interposer substrate 25 and the interposer 20 each have a mounting surface 21 on which the quantum chip 10 is mounted, and an opposite surface 22 opposite to the mounting surface 21.

[0027] For example, the quantum chip 10 is arranged on the −Z-axis direction side of the interposer 20. The wiring layer 16 arranged on the +X-axis direction side of the quantum chip 10 and the mounting surface 21 arranged on the −Z-axis direction side of the interposer 20 are connected via bumps BP.

[0028] The interposer wiring layer 23 is formed on the mounting surface 21 side of the interposer 20, i.e., on the -Z-axis direction side of the interposer 20. The interposer wiring layer 23 contains the above-mentioned superconducting material. The interposer wiring layer 23 may contain the same superconducting material as the wiring layer 16, or may contain a different superconducting material from that of the wiring layer 16. For example, the interposer wiring layer 23 preferably contains Nb (0.1 μm thick), Cu (2 μm thick), and Ti, in that order, from the surface to the interposer substrate 25. For example, if the interposer substrate 25 contains silicon, the mounting surface 21 side of the interposer 20 preferably has a configuration of Nb / Cu / Ti / SiO2 / Si (interposer substrate 25). The interposer wiring layer 23 is connected to the wiring layer 16 of the quantum chip 10 via bumps BP.

[0029] The interposer wiring layer 23 may be a single layer or a multilayer. The interposer wiring layer 23 may include a magnetic field application circuit 23a and a readout unit 23b. The magnetic field application circuit 23a generates a magnetic field to be applied to the loop circuit 17b. Applying a magnetic field to the loop circuit 17b allows the quantum circuit 17 to function as an oscillator. The readout unit 23b reads information from the quantum circuit 17.

[0030] The interposer wiring layer 24 is formed on the opposite surface 22 of the interposer substrate 25, i.e., on the +Z-axis direction side of the interposer 20. The interposer wiring layer 24 may include the above-mentioned superconducting material. The interposer wiring layer 24 may include the same superconducting material as the wiring layer 16 and the interposer wiring layer 23, or may include a different superconducting material from the wiring layer 16 and the interposer wiring layer 23. The interposer wiring layer 24 may also include a normal conducting material. Examples of normal conducting materials include copper (Cu), silver (Ag), gold (Au), platinum (Pt), and alloys containing at least one of these. For example, the interposer wiring layer 24 preferably includes Cu and Ti in that order from the surface to the interposer substrate 25. For example, when the interposer substrate 25 contains silicon, the opposite surface 22 of the interposer 20 preferably has a structure of Cu / Ti / SiO2 / Si (interposer substrate 25).

[0031] The interposer wiring layer 24 may be a single layer or a multilayer. The interposer wiring layer 24 includes a terminal 24a for extracting information from the quantum chip 10 via the TV 26. Although only one terminal 24a is shown in FIG. 2, multiple terminals 24a may be formed. In the quantum device 1 of this embodiment, the opposite surface 22 can be fully utilized as the terminal 24a for extracting information. When the terminal surface QE1 of the quantum element QE is the opposite surface 22, the terminal of the quantum element QE is formed on the opposite surface 22.

[0032] The TV penetrates the interposer substrate 25 from the mounting surface 21 to the opposite surface 22. The interposer wiring layer and the interposer wiring layer are connected by the TV .

[0033] The TV 26 may include the above-mentioned superconducting material. The TV 26 may include the same superconducting material as the wiring layer 16, etc., or may include a different superconducting material from the wiring layer 16, etc. The TV 26 may also include the above-mentioned normal conducting material. The TV 26 may include the same normal conducting material as the interposer wiring layer 24, or may include a different normal conducting material from the interposer wiring layer 24. For example, the TV 26 has a through hole of φ50 μm in diameter, with SiO2 (e.g., a thermal oxide film) formed on the side wall and filled with Cu using Ti as an adhesion layer.

[0034] <socket> Returning to FIGS. 1 and 2 , the socket 40 is disposed opposite the quantum device QE. For example, in this embodiment, the socket 40 is disposed opposite the terminal surface QE1 of the quantum device QE. Specifically, the socket 40 is disposed on the +Z-axis side of the quantum device QE. When the quantum device QE includes the quantum chip 10 and the interposer 20, the terminal surface QE1 is the opposite surface 22 of the interposer 20. Therefore, in this case, the socket 40 is disposed opposite the opposite surface 22 of the interposer 20. When the quantum device QE includes only the quantum chip 10, the terminal surface QE1 is the first surface 11 of the quantum chip 10. Therefore, in this case, the socket 40 is disposed opposite the first surface 11 of the quantum chip 10. The socket 40 includes a housing 45 and contacts 47. Note that in FIGS. 1 and 2 , some reference numerals are omitted to avoid complication.

[0035] The housing 45 has one end face 41 and another end face 42 opposite to the one end face 41. The housing 45 also has a side face 43 connecting the periphery of the one end face 41 and the periphery of the other end face 42. The one end face 41 faces downward, for example, toward the quantum electronic device QE, and the other end face 42 faces upward. The housing 45 holds a contact 47. The housing 45 may hold multiple contacts 47.

[0036] The housing 45 has a linear expansion coefficient of 0.5 to 50×10 -6 Preferably, the housing 45 contains a material having a linear expansion coefficient equivalent to that of the interposer 20. Preferably, the housing 45 contains an insulating material. At least the portion of the housing 45 that comes into contact with the contactor 47 contains an insulating material. Preferably, the housing 45 contains a non-magnetic material. Furthermore, the housing 45 preferably contains a material having a linear expansion coefficient equivalent to that of the interposer 20.

[0037] Housing 45 may include quartz or plastic such as engineering plastic. Housing 45 may also include aluminum oxide (Al2O3, also called alumina), mica-based machinable ceramic, aluminum nitride (AlN), zirconia (ZrO2), macor-based machinable ceramic, glass, or resin. Housing 45 may also include a composite material with low linear thermal expansion containing silica filler, or may include a superconducting material as long as it is insulated from contacts 47.

[0038] The contactor 47 is held by the housing 45. The contactor 47 has one end and the other end opposite the one end. The contactor 47 extends in the Z-axis direction, with one end facing downward and the other end facing upward. One end of the contactor 47 may protrude from one end surface 41 of the housing 45. One end of the contactor 47 electrically contacts, for example, a terminal on the terminal surface QE1. The other end of the contactor 47 may protrude from the other end surface 42. The other end of the contactor 47 electrically contacts a terminal on the board 50. In this manner, the housing 45 may have one end surface 41 from which one end of the contactor 47 protrudes and the other end surface 42 from which the other end of the contactor 47 protrudes. In FIG. 2, a space is formed between the one end surface 41 of the housing 45 and the quantum device QE. However, the space need not be formed as long as one end of the contactor 47 can contact the terminal on the terminal surface QE1. Similarly, if the other end of the contact 47 can contact the terminal of the board 50, the space does not need to be formed.

[0039] One end and the other end of the contactor 47 may be electrically connected with an elastic means such as a coil spring or a leaf spring sandwiched therebetween. Of the one end and the other end of the contactor 47 electrically contacting the terminal on the terminal surface QE1, at least one end may be movable with respect to the housing 45. The other end of the contactor 47 may also be movable with respect to the housing 45. The other end of the contactor 47 is electrically connected to, for example, a terminal of a board 50 on which a connector for input and output to the outside is formed.

[0040] The contactor 47 may include a superconducting material or may include a normal conducting material. The contactor 47 may include the same superconducting material as the wiring layer 16, etc., or may include a different superconducting material from the wiring layer 16, etc. Furthermore, the contactor 47 may include the same normal conducting material as the interposer wiring layer 24, or may include a different normal conducting material from the interposer wiring layer 24. The contactor 47 is preferably made of a non-magnetic material. The contactor 47 preferably includes, for example, a palladium alloy, a gold alloy, beryllium copper (BeCu), gold (plated), niobium (Nb), niobium titanium (Nb-Ti), or titanium (Ti).

[0041] When a plurality of contacts 47 are provided, the centers of gravity of the contacts 47 may be located, for example, at the center of the terminal surface QE1 of the quantum device QE when viewed from a direction perpendicular to the terminal surface QE. This allows the offset between each contact 47 and each terminal of the quantum device QE to be uniform.

[0042] The socket 40 may have a positioning pin (not shown). The positioning pin is a pin that determines the placement position of the socket 40. The positioning pin is held by the housing 45. The positioning pin has, for example, one end that protrudes from one end face 41. The positioning pin determines the placement position of the socket 40 by contacting the one end with a predetermined position on the terminal surface QE1. Alternatively, the placement position of the socket 40 may be determined by forming a hole in the terminal surface QE1 and inserting the positioning pin into the hole. This makes it possible to prevent the socket 40 from shifting out of position. Here, the hole may or may not be a through hole. A through hole refers to a through hole.

[0043] The housing 45 may have a fixed portion 45A and a main body portion 45B other than the fixed portion 45A. The main body portion 45B has one end surface 41 and the other end surface 42, similar to the housing 45. The fixed portion 45A has a protruding shape that protrudes from the other end surface 42 of the main body portion 45B. The fixed portion 45A and the main body portion 45B will be described later.

[0044] <Board> The board 50 is disposed opposite the other end surface 42 of the socket 40. Specifically, the board 50 is disposed on the +Z-axis direction side of the socket 40. The board 50 includes a board substrate 55, bolts 56, and connectors and terminals (not shown). The board substrate 55 is, for example, plate-shaped and has an upper surface 52 and a lower surface 51. The lower surface 51 of the board substrate 55 faces the socket 40. Terminals are provided on the lower surface 51 of the board substrate 55. A connector (not shown) for inputting and outputting to the outside is formed on the upper surface 52 of the board substrate 55. The board substrate 55 may be made of a material such as epoxy, acrylic, urethane, polyimide, phenol, or liquid crystal polymer. Such materials may further contain silica, organic resin, ceramic filler, or glass fiber. The board substrate 55 may also contain solidified ceramic powder. The connector of the board 50 is connected to a terminal of the board 50. The other end of the contact 47 is in electrical contact with the terminal of the board 50.

[0045] Board 50, which is formed with connectors for input from and output to the outside, inputs and outputs power, signals, etc. to and from quantum element QE via socket 40. Bolts 56 are fastened to holes formed in housing 45 via holes that pass through board substrate 55, thereby fixing board substrate 55 and housing 45 together.

[0046] The board substrate 55 may have holes 55C that are different from the holes through which the bolts 56 are passed. The holes 55C may be through-holes that pass through the board substrate 55. The holes 55C will be described later.

[0047] <Regarding the fixing part of the housing, the main body, and the holes on the board> Next, the fixing portion 45A and main body portion 45B of the housing 45, and the hole 55C of the board substrate 55 will be described. Either the housing 45 or the board substrate 55 has a hole. For example, the board substrate 55 has a hole 55C. The hole 55C may be a through-hole that penetrates the board substrate 55. The other of the housing 45 or the board substrate 55 includes a fixing portion disposed inside the hole and a main body portion other than the fixing portion. For example, the housing 45 has a fixing portion 45A and a main body portion 45B other than the fixing portion 45A that are disposed inside the hole 55C of the board substrate 55. The fixing portion 45A has a protruding shape that protrudes from the main body portion 45B. The fixing portion 45A and the main body portion 45B are integrally molded.

[0048] The term "fixed portion 45A and main body portion 45B are integrally molded" means that the fixed portion 45A and main body portion 45B are made of a single member and are integrated with each other. That is, the fixed portion 45A and main body portion 45B are, for example, formed by cutting, integrally molded with a 3D printer, or cast in a mold cavity, and there is no joint between the fixed portion 45A and main body portion 45B. Therefore, "integrally molded" does not include a case where the fixed portion 45A is joined to the main body portion 45B with an adhesive.

[0049] When a plurality of fixing portions 45A and holes 55C are provided, the centers of gravity of the plurality of fixing portions 45A and the centers of gravity of the plurality of contacts 47 are within a predetermined range when viewed from a direction perpendicular to the terminal surface QE. Here, the predetermined range includes positions where the centers of gravity of the plurality of fixing portions 45A and the centers of gravity of the plurality of contacts 47 coincide with each other, and is a range where the contacts 47 can follow deformations of the housing 45 and the board substrate 55. Coincidence is preferable. This allows for equalization of misalignment between the quantum device QE, the socket 40, and the board 50.

[0050] The fixing portion 45A is preferably cylindrical with a central axis in the Z-axis direction. Accordingly, the hole 55C is preferably cylindrical with a central axis in the Z-axis direction. This facilitates shaping using a drill or the like. Also, volume change during thermal expansion can be uniform in the XY plane. The fixing portion may have a taper that increases in diameter toward the main body portion 45B. Specifically, the fixing portion 45A may have a taper that decreases in diameter toward the +Z-axis direction. Note that the fixing portion 45A is not limited to a cylindrical shape, but may also have a rectangular prism shape or a columnar shape with an elliptical bottom. Accordingly, the hole 55C is not limited to a cylindrical shape, but may also have a rectangular tubular shape or a tubular shape with an elliptical bottom.

[0051] 5 and 6 are plan views illustrating a fixing portion 45A according to another example of the first embodiment. As shown in FIGS. 5 and 6, the fixing portion 45A may have a shape with a longitudinal direction when viewed from the Z-axis direction perpendicular to the terminal surface QE1. For example, the fixing portion 45A may have an elliptical shape with the longitudinal direction as the major axis and the lateral direction as the minor axis. As shown in FIG. 5, in a quantum device 1x, the longitudinal direction of the multiple fixing portions 45A may pass through the centers of gravity of the multiple fixing portions 45A and the multiple contacts 47. Alternatively, as shown in FIG. 6, in a quantum device 1y, the lateral direction perpendicular to the longitudinal direction of the multiple fixing portions 45A may pass through the centers of gravity of the multiple fixing portions 45A and the multiple contacts 47. The shape of the fixing portion 45A shown in FIG. 5 or 6 is determined depending on the relative changes in the magnitude of expansion and contraction of each component. This can prevent misalignment between the components. Furthermore, the multiple fixing portions 45A may be arranged at positions facing each other across the center of gravity of the multiple contacts 47, regardless of their shape. The direction in which a set of fixing portions 45A arranged at opposing positions faces each other may be perpendicular to the direction in which another set of opposing fixing portions 45A faces each other. Specifically, for example, when four fixing portions 45A are arranged at each corner of the rectangular main body portion 45B as viewed from the Z-axis direction, the direction in which one set of fixing portions 45A faces each other is perpendicular to the direction in which another set of opposing fixing portions 45A faces each other. By arranging them in this way, it is possible to suppress misalignment between the respective components.

[0052] <Cooling base> The cooling base 30 has a cooling function. For example, the cooling base 30 is a cold stage that can be cooled to an extremely low temperature of about 10 mK using a refrigerator. The cooling base 30 preferably contains a metal such as Cu, a Cu alloy, or Al. In the case of a cooling base 30 containing Al, insulation may be performed by anodizing. The quantum device 1 of this embodiment uses a superconducting phenomenon at extremely low temperatures of 9.2 K or less when Nb is contained as the superconducting material of the quantum element QE, and 1.2 K or less when Al is contained as the superconducting material. For this reason, a cooling base 30 that can be cooled to such extremely low temperatures is used.

[0053] At least a part of any of the quantum device QE, the housing 45, and the board substrate 55 is in contact with the cooling base 30 having a cooling function. In Fig. 2, the bottom surface of the quantum device QE is in contact.

[0054] <Comparative Example> Next, a comparative example will be described. FIG. 7 is a plan view illustrating a quantum device according to the comparative example. FIG. 8 is a cross-sectional view illustrating a quantum device according to the comparative example, taken along line VIII-VIII in FIG. 7. As shown in FIGS. 7 and 8, a quantum device 101 according to the comparative example includes a quantum element QE, a socket 140, and a board 50. In the quantum device 101 according to the comparative example, the socket 140 includes a housing 145 and contacts 47. The housing 145 includes a fixing portion 145A and a main body portion 145B.

[0055] In the comparative example, the board substrate 55 has a hole 55C. The fixing portion 145A of the housing 145 has a portion disposed inside the hole 55C of the board substrate 55. However, in the comparative example, unlike the first embodiment, the fixing portion 145A and the main body portion 145B are not integrally molded. For example, the fixing portion 145A and the main body portion 145B are formed from different materials. Therefore, in the comparative example, it is not possible to suppress errors due to differences in the linear expansion coefficients of the fixing portion 145A and the main body portion 145B. Therefore, during the cooling process of the quantum device 101, gaps are generated when the housing 145 contracts, and it is not possible to reduce the positional deviation of the contactor 47.

[0056] FIG. 9 is a plan view schematically illustrating the state of the fixing portion 145A and the main body portion 145B of the housing 145 according to the comparative example and the board substrate 55 before cooling. FIG. 10 is a cross-sectional view schematically illustrating the state of the fixing portion 145A and the main body portion 145B of the housing 145 according to the comparative example and the board substrate 55 before cooling, showing a cross section taken along line XX in FIG. 9. FIG. 11 is a plan view schematically illustrating the state of the fixing portion 145A and the main body portion 145B of the housing 145 according to the comparative example and the board substrate 55 after cooling. FIGS. 12 and 13 are cross-sectional views schematically illustrating the state of the fixing portion 145A and the main body portion 145B of the housing 145 according to the comparative example and the board substrate 55 after cooling, showing a cross section taken along line XII-XII in FIG. 11. FIG. 14 is a plan view schematically illustrating the state of the fixing portion and the main body portion of the housing according to the comparative example and the board substrate after cooling. FIG. 15 is a cross-sectional view taken along line XV-XV in FIG. 14, which schematically illustrates the state of the fixing portion and main body portion of the housing according to the comparative example and the board substrate after cooling.

[0057] As shown in FIGS. 9 and 10 , before cooling, quantum device 101 has a through-hole formed therein, including hole 55C in board substrate 55 and hole 145C in main body 145B. Fixing portion 145A is disposed inside the through-hole. During cooling, each component contracts, reducing the inner diameter of the through-hole. Furthermore, the center position of the through-hole may shift. Therefore, at room temperature before cooling, a gap 55D is formed between fixing portion 145A and the through-hole. For example, the magnitude of contraction of the materials of each component during cooling is such that (main body 145B of housing 145) > (fixing portion 145A of housing 145) > (board substrate 55).

[0058] As shown in FIGS. 11 to 15, after cooling, the central axes of the through holes may be misaligned due to differences in the degree of shrinkage of the main body 145B and the board substrate 55, for example. As a result, the fixing portion 145A may tilt from its pre-cooling state. This results in a misalignment of the position of the fixing portion 145A. Furthermore, because the respective components shrink differently during cooling, the tilt of each fixing portion 145A may vary, resulting in a misalignment of the center position of the socket 40. For example, in FIG. 12, the fixing portion 145A is tilted toward the +Y-axis direction; in FIG. 13, it is tilted toward the −Y-axis direction; and in FIGS. 14 and 15, it is tilted toward the −X-axis direction. Furthermore, the main body 145B of the housing 145 rotates counterclockwise relative to the board substrate 55, corresponding to the movable range of the fixing portion 145A and each hole 55C (through-hole). Thus, in the comparative example, misalignment of the central axes of the through holes causes the fixed portion 145A to tilt or the main body portion 145B to rotate, resulting in misalignment. Depending on the direction of the misalignment, the tilt of the fixed portion 145A can take the X-axis direction, the Y-axis direction, or a combination of the X-axis and Y-axis components.

[0059] Fig. 16 is a plan view schematically illustrating the fixing portion 45A and the main body portion 45B of the housing 45 according to the first embodiment and the board substrate 55 in a state before cooling. Fig. 17 is a cross-sectional view schematically illustrating the fixing portion 45A and the main body portion 45B of the housing 45 according to the first embodiment and the board substrate 55 in a state before cooling, showing a cross section taken along line XVII-XVII in Fig. 16. Fig. 18 is a plan view schematically illustrating the fixing portion 45A and the main body portion 45B of the housing 45 according to the first embodiment and the board substrate 55 in a state after cooling. Fig. 19 is a cross-sectional view schematically illustrating the fixing portion 45A and the main body portion 45B of the housing 45 according to the first embodiment and the board substrate 55 in a state after cooling, showing a cross section taken along line XVIIII-XVIIII in Fig. 18.

[0060] As shown in FIGS. 16 and 17 , before cooling, a through-hole is formed as hole 55C in board substrate 55. Fixing portion 45A is disposed inside hole 55C. During cooling, each component shrinks, reducing the inner diameter of hole 55C. Therefore, at room temperature before cooling, gap 55D is formed between fixing portion 45A and hole 55C. In embodiment 1, for example, the degree of shrinkage of the materials of each component during cooling is such that (fixing portion 45A and main body portion 45B of housing 45)>(board substrate 55).

[0061] 18 and 19, in the first embodiment, since the fixing portion 45A and the main body portion 45B are integrally molded, the entire housing 45 shrinks uniformly after cooling. This makes it possible to prevent the central position of the housing 45 from shifting. Furthermore, even if differences in shrinkage occur between components, the movement of the fixing portion 45A is restricted by the inner wall of the hole 55C in the board substrate 55. This makes it possible to prevent the fixing portion 45A from shifting in position.

[0062] Next, the effects of this embodiment will be described. The housing 45 of this embodiment has a fixing portion 45A that fixes the board 50. The fixing portion 45A and the main body portion 45B are integrally molded. This makes it possible to suppress errors due to differences in the linear expansion coefficients of the fixing portion 45A and the main body portion 45B. Therefore, it is possible to reduce positional deviation of the contacts 47 when the housing 45 contracts, compared to when the housing 45 is fixed using only the bolts 56.

[0063] Furthermore, when viewed from a direction perpendicular to the terminal surface QE1, the centers of gravity of the plurality of fixing portions 45A and the plurality of contacts 47 are within a predetermined range. This makes it possible to equalize the positional deviation between the quantum device QE and the socket 40.

[0064] In the first embodiment described above, the board substrate 55 has the hole 55C, and the housing 45 has the fixing portion 45A and the main body portion 45B, but this is not limiting.

[0065] FIG. 20 is a cross-sectional view illustrating a quantum device according to another example of the first embodiment. As shown in FIG. 20, in a quantum device 1z, the housing 45 may have a hole 45C, and the board substrate 55 may have a fixing portion 55A and a main body portion 55B. The fixing portion 55A and the main body portion 55B may be integrally molded. Even in this configuration, the board substrate 55 has the fixing portion 55A that fixes the housing 45, thereby suppressing errors due to differences in the linear expansion coefficients of the fixing portion 55A and the main body portion 55B. Therefore, it is possible to reduce misalignment of the contacts 47 when the housing 45 and the board substrate 55 contract.

[0066] (Variation 1) Next, a quantum device according to Modification 1 of Embodiment 1 will be described. In the quantum device of this modification, fixing portion 45A of housing 45 is disposed in hole 55C of board substrate 55, and fixing portion 30 of cooling base 30 is disposed in hole 55C of board substrate 55. This prevents misalignment of socket 40, board 50, and cooling base 30.

[0067] FIG. 21 is a plan view illustrating the configuration of a quantum device according to Modification 1 of Embodiment 1. FIG. 22 is a cross-sectional view illustrating the configuration of a quantum device according to Modification 1 of Embodiment 1, taken along line XXII-XXII in FIG. 21. As shown in FIGS. 21 and 22, in a quantum device 1a according to this modification, the cooling base 30 is in contact with the board substrate 55 in addition to the quantum device QE. Specifically, the quantum device QE and the socket 40 are covered below and on the sides by the cooling base 30. That is, the quantum device QE and the socket 40 are disposed inside a recess formed in the cooling base 30. The board substrate 55 is in contact with the edge of the cooling base 30.

[0068] A hole 55C is formed in the board substrate 55 at a portion that comes into contact with the cooling base 30. The cooling base 30 has a fixing portion 30A that is disposed inside the hole 55C. Thus, the cooling base 30 has the fixing portion 30A and a main body portion 30B other than the fixing portion 30A. In the drawing, a bolt 56 is passed through the fixing portion 30A, but it is not necessary to pass the bolt 56 through the fixing portion 30A.

[0069] According to this embodiment, the cooling base 30 has a fixing portion 30A that fixes the board 50. The fixing portion 30A and the main body portion 30B are integrally molded. This makes it possible to suppress errors due to differences in the linear expansion coefficients of the fixing portion 30A and the main body portion 30B. Therefore, it is possible to reduce positional deviation of the contacts 47 compared to when fixing is performed using only the bolts 56.

[0070] Furthermore, multiple fixing portions 30A may be provided. In this case, the centers of gravity of the multiple fixing portions 30A and the multiple contacts 47 are within a predetermined range when viewed from a direction perpendicular to the terminal surface QE1. This makes it possible to prevent misalignment between the quantum device QE and each member such as the cooling base 30.

[0071] In the first modification, the board substrate 55 has the hole 55C, and the cooling base 30 has the fixing portion 30A and the main body portion 30B. However, this is not limited to this. The cooling base 30 may have a hole, and the board substrate 55 may have the fixing portion 55A and the main body portion 55B. In this manner, one of the cooling base 30 and the board substrate 55 may have a hole, and the other of the cooling base 30 and the board substrate 55 may include a fixing portion and a main body portion disposed inside the hole. The fixing portion and the main body portion may be integrally molded. Even in this configuration, the board substrate 55 has the fixing portion 55A that fixes the cooling base 30, thereby suppressing errors due to differences in the linear expansion coefficients of the fixing portion 55A and the main body portion 55B. Therefore, misalignment of the contacts 47 caused by contraction of the cooling base 30 and the board substrate 55 can be reduced. Other configurations and effects are included in the description of the first embodiment.

[0072] (Variation 2) Next, a quantum device according to Modification 2 of Embodiment 1 will be described. This modification has a different configuration for the cooling base 30.

[0073] FIG. 23 is a cross-sectional view illustrating the configuration of a quantum device according to Modification 2 of Embodiment 1. FIG. 24 is a cross-sectional view illustrating the quantum element QE and the cooling base 30 in a quantum device according to Modification 2 of Embodiment 1. FIG. 25 is a plan view illustrating the recess 31 and the counterbore of the cooling base 30 according to Modification 2 of Embodiment 1. As shown in FIGS. 23 to 25, in a quantum device 1b of this modification, the quantum element QE includes a quantum chip 10 and an interposer 20. The second surface 12 of the quantum chip 10 is in contact with the cooling base 30.

[0074] A recess 31 is formed in the cooling base 30. For example, the recess 31 is formed in a predetermined surface 32 of the cooling base 30. The predetermined surface 32 is, for example, the upper surface facing the +Z axis direction. The recess 31 opens to the +Z axis direction. When viewed from above, the recess 31 has, for example, a rectangular shape. In addition, a countersunk portion 38 is formed around the opening of the recess 31. As a result, a stepped surface 39 having a step with the predetermined surface 32 is formed around the opening of the recess 31. Therefore, the countersunk portion 38 includes the stepped surface 39.

[0075] The step surface 39 is, for example, parallel to the predetermined surface 32. The step surface 39 is formed around the recess 31. The step surface 39 surrounds the recess 31. When viewed from above through the interposer 20, the quantum chip 10 is smaller than the recess 31. Therefore, the quantum chip 10 is disposed inside the recess 31 formed in the cooling base 30 having a cooling function.

[0076] On the other hand, when viewed from above, the interposer 20 is larger than the recess 31. Therefore, a portion of the interposer 20 is in contact with the cooling base 30. For example, a portion of the mounting surface 21 of the interposer 20 on which the quantum chip 10 is mounted is in contact with the step surface 39 of the cooling base 30.

[0077] An insulating film may be formed on the portion of the mounting surface 21 of the interposer 20 that contacts the stepped surface 39 in order to prevent electrical conduction with the stepped surface 39. Furthermore, the interposer wiring layer 23 may not be formed on the portion of the mounting surface 21 that contacts the stepped surface 39.

[0078] By bringing at least a portion of the interposer 20 into contact with the cooling base 30, the interposer 20 can be used as a heat flow path to cool the quantum circuit 17 in the quantum chip 10 to an extremely low temperature, thereby utilizing the superconducting phenomenon. Furthermore, by bringing the second surface 12 of the quantum chip 10 into contact with the inner surface of the recess 31, the cooling performance can be further improved. In order to improve the thermal insulation that reduces temperature changes around the quantum chip, it is preferable to create a vacuum or reduced pressure atmosphere around the quantum chip 10.

[0079] As shown in Fig. 25, the recess 31 may have spaces on all four sides so that the quantum chip 10 can be placed therein. The recess 31 may also have a shape with rounded or circular corners added to its four corners. This makes it possible to suppress the occurrence of stress and strain due to volumetric changes when cooled to extremely low temperatures. In particular, it makes it possible to suppress the concentration of stress at the four corners due to the right-angled and acute-angled shapes.

[0080] In the quantum device 1b of this modified example, the quantum chip 10 is disposed inside a cooling base 30 having a cooling function. The second surface 12 of the quantum chip 10 is in contact with the inner surface of a recess 31 of the cooling base 30. At least a portion of the second surface 12 may be in contact with the inner surface of the recess 31. With this configuration, the quantum chip 10 can be cooled from the second surface 12 side by thermal conduction of the cooling base 30, improving cooling performance. Therefore, the quantum circuit 17 in the quantum chip 10 can be operated stably.

[0081] Furthermore, by having the second surface 12 movably contact the inner surface of the recess 31, stress and strain caused by the difference in contraction between the quantum chip 10 and the cooling base 30 due to a temperature change to an extremely low temperature can be suppressed.

[0082] At least a portion of the interposer 20 is in contact with the cooling base 30, so that the quantum chip 10 can be cooled by thermal conduction of the cooling base 30 via the interposer 20, thereby improving cooling performance.

[0083] The opposite surface 22 of the interposer 20 can be used to the maximum extent as the terminals 24a for extracting information from the quantum chip 10. This makes it possible to increase the number of information extraction terminals.

[0084] Furthermore, since the interposer 20 is disposed inside the countersunk portion 38, it is surrounded by the cooling base 30. This improves the cooling performance. Furthermore, a portion of the mounting surface 21 of the interposer 20 is in contact with the stepped surface 39, which also improves the cooling performance. Furthermore, since the step between the predetermined surface 32 and the opposite surface 22 can be reduced, the degree of freedom in arranging the quantum device 3 can be improved.

[0085] (Variation 3) Next, a third modification of the first embodiment will be described. This modification has an adhesive or bonding layer between the quantum chip 10 and the inner surface of the recess 31. FIG. 26 is a cross-sectional view illustrating an adhesive or bonding layer according to the third modification of the first embodiment. As shown in FIG. 26, in a quantum device 1c of the third modification, at least a portion of the second surface 12 of the quantum chip 10 may be adhered or bonded to the inner surface of the recess 31. For example, the second surface 12 may be adhered to the cooling base 30 by an adhesive layer BL such as varnish or grease. Alternatively, the second surface 12 may be bonded by a bonding layer ML such as a metal layer formed between the chip substrate 15 and the cooling base 30. This configuration improves the installation stability and positional accuracy of the quantum chip 10. Furthermore, the thermal connection with the cooling base 30 can be improved.

[0086] The adhesive layer BL or the bonding layer ML may be disposed over the entire surface of the second surface 12, or may be disposed on at least a portion of the second surface 12, such as the peripheral portion or the central portion of the second surface 12. For example, the adhesive layer BL or the bonding layer ML may be formed so as to avoid the region where the quantum circuit 17 is formed when viewed from above. If the adhesive layer BL is made of an insulating material, it may resonate with the quantum circuit 17 as a capacitor, resulting in a loss of overall energy. By disposing the adhesive layer BL so as to avoid the region where the quantum circuit 17 is formed, it is possible to suppress resonance.

[0087] Furthermore, if the bonding layer ML has conductivity like a metal layer, the ground potential of the quantum chip 10 may be obtained from the cooling base 30 via the bonding layer ML, or the potential specified by the cooling base 30 may be obtained.

[0088] (Variation 4) Next, a fourth modification of the first embodiment will be described. This modification has a space between the quantum chip 10 and the inner surface of the recess 31. FIG. 27 is a cross-sectional view illustrating the space between the quantum chip 10 and the inner surface of the recess 31 according to the fourth modification of the first embodiment. As shown in FIG. 27, in a quantum device 1d of the fourth modification, the quantum chip 10 does not need to contact the cooling base 30. That is, the second surface 12 of the quantum chip 10 may be disposed with a space between it and the inner surface of the recess 31 of the cooling base 30. This configuration makes it possible to suppress stress and strain caused by differential contraction between the quantum chip 10 and the cooling base 30 due to a temperature change to an extremely low temperature.

[0089] (Variation 5) Next, a quantum device according to a fifth modification of the first embodiment will be described. In the quantum device of this embodiment, the interposer 20 contacts the side surface of the countersunk portion 38. FIG. 28 is a cross-sectional view illustrating a quantum device according to the fifth modification of the first embodiment. As shown in FIG. 28, in a quantum device 1e, the recess 31 of the cooling base 30 is formed in the predetermined surface 32 of the cooling base 30. The countersunk portion 38 is formed around the opening of the recess 31. As a result, a step surface 39 having a step with the predetermined surface 32 is formed around the opening of the recess 31.

[0090] In the quantum device 1e of this modified example, at least a portion of the side surface of the interposer 20 contacts a side surface of the countersunk portion 38 between the step surface 39 and the predetermined surface 32. A portion of the mounting surface 21 of the interposer 20 is disposed with a space between it and the step surface 39. This means that the mounting surface 21 of the interposer 20 does not need to contact the cooling base 30, allowing the mounting surface 21 to be used to the maximum extent.

[0091] Furthermore, in the quantum device 1e of this modified example, the quantum chip 10 may be fitted into the recess 31 at cryogenic temperatures. Therefore, the side surface of the quantum chip 10 is in contact with the inner surface of the recess 31. This allows the quantum chip 10 to be cooled by heat conduction from the side surface, thereby improving cooling performance.

[0092] When the quantum device 1e is cooled from room temperature to an extremely low temperature of several mK, the quantum chip 10, the interposer 20, and the cooling base 30 undergo volumetric changes. Therefore, taking this volumetric change into consideration in advance, the side of the quantum chip 10 is made to contact the recess 31 at extremely low temperatures. The ground potential of the quantum chip 10 may be obtained from the cooling base 30 via the side of the quantum chip 10. The side of the quantum chip 10 may not be made to contact the inner surface of the recess 31.

[0093] (Variation 6) Next, a sixth modification of the first embodiment will be described. In this modification, the cooling base 30 has a recess at the bottom of the recess 31. FIG. 29 is a cross-sectional view illustrating a recess formed at the bottom of the recess 31 of the cooling base 30 according to the sixth modification of the first embodiment. FIG. 30 is a plan view illustrating a recess formed at the bottom of the recess 31 of the cooling base 30 according to the sixth modification of the first embodiment. As shown in FIGS. 29 and 30, in a quantum device 1f according to the sixth modification, a recess 35 is formed at the bottom of the recess 31. As shown in FIG. 30, when viewed from above, the area of ​​the recess 35 is larger than the area 18 in which the quantum circuit 17 is formed. Therefore, the area 18 in which the quantum circuit 17 is formed is included in the area of ​​the recess 35. The peripheral portion of the second surface 12 of the quantum chip 10 may contact the bottom of the recess 31. The central portion of the second surface 12 of the quantum chip 10 covers the recess 35.

[0094] When viewed from above, the area of ​​the recess 35 may be larger than the quantum chip 10. In this case, the second surface 12 of the quantum chip 10 does not contact the bottom of the recess 31.

[0095] In quantum device 1f, when viewed from above, the area of ​​recess 35 is larger than area 18 in which quantum circuit 17 is formed, so the distance between area 18 in which quantum circuit 17 is formed and cooling base 30, which includes metal or the like, can be increased. This suppresses the generation of a pseudo-capacitor and reduces the influence of resonance occurring in the main material, such as silicon, of chip substrate 15. This reduces the influence on the operating frequency of quantum circuit 17.

[0096] (Variation 7) Next, a seventh modification of the first embodiment will be described. In this modification, the periphery of the second surface 12 of the quantum chip 10 is adhered or bonded to the periphery of the recess 35. FIG. 31 is a cross-sectional view illustrating a recess formed in the bottom of the recess of the cooling base according to the seventh modification of the first embodiment. As shown in FIG. 31, in the quantum device 1g of the seventh modification, the periphery of the second surface 12 of the quantum chip 10 may be adhered to the bottom of the recess 31 by an adhesive layer BL or may be bonded by a bonding layer ML such as a metal layer. This configuration reduces the effects of resonance while improving the installation stability and positional accuracy of the quantum chip 10. Furthermore, the thermal connection with the cooling base 30 can be improved.

[0097] (Variation 8) Next, an eighth modification of the first embodiment will be described. In this modification, a space is provided between the periphery of the second surface 12 of the quantum chip 10 and the periphery of the recess 35. FIG. 32 is a cross-sectional view illustrating a recess formed in the bottom of the recess of the cooling base according to the eighth modification of the first embodiment. As shown in FIG. 32, in a quantum device 1h according to the eighth modification, the periphery of the second surface 12 of the quantum chip 10 does not need to contact the cooling base 30. That is, the periphery of the second surface 12 of the quantum chip 10 may be arranged with a space between it and the bottom of the recess 31. This configuration reduces the effects of resonance while suppressing stress and strain caused by differential contraction between the quantum chip 10 and the cooling base 30 due to a temperature change to an extremely low temperature.

[0098] (Variation 9) Next, a ninth modification of the first embodiment will be described. In this modification, a through-hole is formed in the bottom of the recess 31 of the cooling base 30. FIG. 33 is a cross-sectional view illustrating a through-hole formed in the bottom of the recess 31 of the cooling base 30 according to the ninth modification of the first embodiment. As shown in FIG. 33, in the quantum device 1i of the ninth modification, a through-hole 37 is formed in the bottom of the recess 31. When viewed from above, the area of ​​the through-hole 37 is larger than the area 18 in which the quantum circuit 17 is formed. Therefore, the area 18 in which the quantum circuit 17 is formed is included in the area of ​​the through-hole 37. The peripheral portion of the second surface 12 of the quantum chip 10 may be in contact with the bottom of the recess 31, or may be adhered or bonded to the bottom of the recess 31. The central portion of the second surface 12 of the quantum chip 10 covers the through-hole 37.

[0099] In quantum device 1i, when viewed from above, the area of ​​through-hole 37 is larger than area 18 in which quantum circuit 17 is formed, so the distance between area 18 in which quantum circuit 17 is formed and cooling base 30, which includes metal or the like, can be increased. This reduces the effect of resonance occurring in the main material, such as silicon, of chip substrate 15. This reduces the effect on the operating frequency of quantum circuit 17.

[0100] (Variation 10) In the second to ninth modifications of the first embodiment, the interposer 20 is disposed on the step surface 39 of the recess 38, but this is not limiting. The recess 38 does not have to be formed in the cooling base 30. A portion of the mounting surface 21 of the interposer 20 may be in contact with the predetermined surface 32 of the cooling base 30. FIG. 34 is a cross-sectional view illustrating a quantum element QE and the cooling base 30 in a quantum device according to a tenth modification of the first embodiment.

[0101] As shown in Fig. 34, a recess 31 is formed in the cooling base 30. For example, the recess 31 is formed in a predetermined surface 32 of the cooling base 30. The predetermined surface 32 is, for example, the upper surface facing the +Z axis direction. The recess 31 is open on the +Z axis direction side. When viewed from above, the recess 31 is, for example, rectangular.

[0102] When viewed from above through the interposer 20, the quantum chip 10 is smaller than the recess 31. On the other hand, when viewed from above, the interposer 20 is larger than the recess 31. The quantum chip 10 is disposed inside the recess 31. On the other hand, a portion of the interposer 20 is in contact with the cooling base 30. For example, a portion of the mounting surface 21 of the interposer 20 on which the quantum chip 10 is mounted is in contact with the upper surface of the cooling base 30.

[0103] An insulating film may be formed or an insulating spacer may be arranged on the portion of the mounting surface 21 of the interposer 20 that contacts the cooling base 30 in order to prevent electrical conduction with the cooling base 30. Furthermore, the interposer wiring layer 23 may not be formed on the portion of the mounting surface 21 that contacts the cooling base 30.

[0104] By bringing at least a portion of the interposer 20 into contact with the cooling base 30, the interposer 20 can be used as a heat flow path to cool the quantum circuit 17 in the quantum chip 10 to an extremely low temperature, thereby utilizing the superconducting phenomenon.

[0105] (Variation 11) Next, a quantum device according to Modification 11 will be described. In the quantum device of this modification, the side surface of the interposer 20 contacts the inner surface of the recess 31. FIG. 35 is a cross-sectional view illustrating a quantum device according to Modification 11 of Embodiment 1. As shown in FIG. 35, quantum device 1k of Modification 11 is similar to Embodiment 1 in that it includes a quantum chip 10 and an interposer 20. However, in quantum device 1k, at least a portion of the side surface of interposer 20 contacts the inner surface of the recess 31.

[0106] With this configuration, the mounting surface 21 of the interposer 20 does not need to be in contact with the cooling base 30, making it possible to make maximum use of the mounting surface 21. For example, the interposer wiring layer 23 can be formed to the maximum extent on the mounting surface 21.

[0107] (Variation 12) Next, a quantum device according to Modification 12 will be described. In the quantum device of this modification, the quantum chip 10 and the interposer 20 are oriented upside down. FIG. 36 is a cross-sectional view illustrating a quantum device according to Modification 12 of Embodiment 1. As shown in FIG. 36, in a quantum device 11 of this modification, the interposer 20 is disposed on a predetermined surface 32 of the cooling base 30. The opposite surface 22 of the interposer 20 is in contact with the predetermined surface 32 of the cooling base 30. An interposer wiring layer 24 may or may not be formed on the opposite surface 22. The mounting surface 21 of the interposer 20 faces upward.

[0108] The quantum chip 10 is disposed on the mounting surface 21 of the interposer 20. That is, the first surface 11 of the quantum chip 10 is mounted on the mounting surface 21 of the interposer 20. The second surface 12 of the quantum chip 10 faces upward. Therefore, in this modification, the terminal surface QE1 may be the second surface 12 of the quantum chip 10. In that case, the terminals of the quantum element QE are formed on the second surface 12 of the quantum chip 10. Furthermore, the terminal surface QE1 may include a portion of the mounting surface 21 of the interposer 20 other than the portion on which the quantum chip 10 is disposed.

[0109] The quantum device 1l of this modification can improve the degree of freedom in the shape of the cooling base 30. Furthermore, the contacts 47 of the socket 40 can be directly connected to the terminals of the quantum chip 10. Therefore, the quantum chip 10 can receive signals, power, etc. from the socket 40, reducing signal delays and power loss.

[0110] The present invention is not limited to the above-described embodiment and modifications 1 to 12, and can be modified as appropriate without departing from the spirit of the present invention. For example, the technical scope of the present embodiment includes combinations of the configurations of embodiment 1 and modifications 1 to 12, as well as their effects.

[0111] A part or all of the above-described embodiments can be described as, but not limited to, the following supplementary notes.

[0112] (Appendix 1) a superconducting element including a superconducting material; a socket including a contactor in contact with a terminal of the superconducting element and a housing supporting the contactor; a board including a board substrate; Equipped with At least one of the housing and the board substrate has a hole; the other of the housing and the board substrate includes a fixing portion disposed inside the hole and a main body portion other than the fixing portion, The fixing portion and the main body portion are integrally molded. Quantum devices. (Appendix 2) the terminal is formed on a terminal surface of the superconducting element, The fixing portion has a cylindrical shape having a central axis in a direction perpendicular to the terminal surface. 10. The quantum device of claim 1. (Appendix 3) the terminal is formed on a terminal surface of the superconducting element, The hole has a cylindrical shape having a central axis in a direction perpendicular to the terminal surface. 3. The quantum device of claim 1 or 2. (Appendix 4) the terminal is formed on a terminal surface of the superconducting element, the fixing portion has a shape having a longitudinal direction when viewed in a direction perpendicular to the terminal surface; 10. The quantum device of claim 1. (Appendix 5) The fixing portion has an elliptical shape when viewed in a direction perpendicular to the terminal surface. 5. The quantum device of claim 4. (Appendix 6) the terminal is formed on a terminal surface of the superconducting element, The hole has a shape having a longitudinal direction when viewed in a direction perpendicular to the terminal surface. 6. The quantum device of claim 4 or 5. (Appendix 7) The hole has an elliptical shape when viewed in a direction perpendicular to the terminal surface. 10. The quantum device of claim 6. (Appendix 8) the terminal is formed on a terminal surface of the superconducting element, a plurality of the holes and a plurality of the fixing portions are provided; The contacts are provided in plurality, When viewed from a direction perpendicular to the terminal surface, the centers of gravity of the plurality of fixing portions and the centers of gravity of the plurality of contacts are within a predetermined range. 10. The quantum device of claim 1. (Appendix 9) The plurality of fixing portions are arranged at positions facing each other across the center of gravity. 9. The quantum device of claim 8. (Appendix 10) The direction in which one set of the fixing parts arranged at opposing positions faces each other is perpendicular to the direction in which another set of the fixing parts arranged at opposing positions faces each other. 10. The quantum device of claim 9. (Appendix 11) At least one of the fixing portions has a cylindrical shape having a central axis in a direction perpendicular to the terminal surface. 12. A quantum device according to any one of claims 8 to 11. (Appendix 12) the fixing portion has a shape having a longitudinal direction when viewed in a direction perpendicular to the terminal surface, The longitudinal direction of the plurality of fixing portions passes through the center of gravity. 11. The quantum device according to any one of claims 8 to 10. (Appendix 13) the fixing portion has a shape having a longitudinal direction when viewed in a direction perpendicular to the terminal surface, a direction perpendicular to the longitudinal direction of the plurality of fixing portions passes through the center of gravity; 11. The quantum device according to any one of claims 8 to 10. (Appendix 14) The fixing portion has an elliptical shape when viewed in a direction perpendicular to the terminal surface. 14. The quantum device of claim 12 or 13. (Appendix 15) The fixing portion has a taper that increases in diameter toward the main body portion. 15. The quantum device according to any one of claims 1 to 14. (Appendix 16) The housing includes at least one of quartz, plastic aluminum oxide, mica-based machinable ceramic, aluminum nitride, zirconia, macor-based machinable ceramic, glass, and resin. 16. The quantum device according to any one of appendices 1 to 15. (Appendix 17) the housing includes a silica filler; 17. The quantum device of claim 16. (Appendix 18) The board substrate includes at least one of epoxy, acrylic, urethane, polyimide, phenol, and liquid crystal polymer. 18. The quantum device according to any one of claims 1 to 17. (Appendix 19) The board substrate contains a filler selected from the group consisting of silica, organic resin, and ceramic, or glass fiber. 19. The quantum device of claim 18. (Appendix 20) At least a part of the superconducting element, the housing, and the board substrate is in contact with a cooling base having a cooling function. 20. The quantum device according to any one of appendices 1 to 19. (Appendix 21) the board substrate has the hole, the housing includes the fixing portion and the main body portion; 21. The quantum device according to any one of claims 1 to 20. (Appendix 22) the housing has the hole; The board substrate includes the fixing portion and the main body portion. 21. The quantum device according to any one of claims 1 to 20. (Appendix 23) The superconducting element is a quantum element provided with a quantum circuit. 23. The quantum device according to any one of claims 1 to 22. (Appendix 24) The quantum device comprises: a quantum chip including at least a part of the quantum circuit; an interposer on which the quantum chip is mounted; Including, The terminal is formed on the opposite side of the mounting surface of the interposer on which the quantum chip is mounted. 24. The quantum device of claim 23. (Appendix 25) The quantum chip is disposed inside a recess formed in a cooling base having a cooling function, a portion of the interposer contacting the cooling base; 25. The quantum device of claim 24. (Appendix 26) the quantum chip has a first surface mounted on the interposer and a second surface opposite the first surface; At least a portion of the second surface is in contact with the inner surface of the recess. 26. The quantum device of claim 25. (Appendix 27) the quantum chip has a first surface mounted on the interposer and a second surface opposite the first surface; At least a portion of the second surface is adhered or bonded to the inner surface of the recess. 26. The quantum device of claim 25. (Appendix 28) the quantum chip has a first surface mounted on the interposer and a second surface opposite the first surface; The second surface is disposed with a space interposed between it and the inner surface of the recess. 26. The quantum device of claim 25. (Appendix 29) the quantum chip includes the quantum circuit in which a resonator having a loop circuit in which superconducting materials are connected in a ring by Josephson junctions is formed; A recess is formed at the bottom of the recess, When viewed from a direction perpendicular to the first surface of the quantum chip mounted on the interposer, the region in which the quantum circuit is formed is included in the recessed region. 26. The quantum device of claim 25. (Appendix 30) the quantum chip includes the quantum circuit in which a resonator having a loop circuit in which superconducting materials are connected in a ring by Josephson junctions is formed; a through hole is formed in the bottom of the recess; When viewed from a direction perpendicular to the first surface of the quantum chip mounted on the interposer, the region in which the quantum circuit is formed is included in the region of the through hole. 26. The quantum device of claim 25. (Appendix 31) The recess is formed in a predetermined surface of the cooling base, A part of the mounting surface of the interposer on which the quantum chip is mounted is in contact with the predetermined surface. 31. The quantum device according to any one of claims 25 to 30. (Appendix 32) The recess is formed in a predetermined surface of the cooling base, At least a portion of the side surface of the interposer is in contact with the inner surface of the recess. 31. The quantum device according to any one of claims 25 to 30. (Appendix 33) The recess is formed in a predetermined surface of the cooling base, a stepped surface having a step with respect to the predetermined surface is formed around the opening of the recess, A part of the mounting surface of the interposer on which the quantum chip is mounted is in contact with the step surface. 31. The quantum device according to any one of claims 25 to 30. (Appendix 34) The recess is formed in a predetermined surface of the cooling base, a stepped surface having a step with respect to the predetermined surface is formed around the opening of the recess, At least a part of the side surface of the interposer is in contact with a side surface between the step surface and the predetermined surface. 31. The quantum device according to any one of claims 25 to 30. (Appendix 35) a part of the mounting surface of the interposer on which the quantum chip is mounted is disposed with a space between it and the step surface; 35. The quantum device of claim 34. (Appendix 36) a superconducting element including a superconducting material; a socket including a contactor in contact with a terminal of the superconducting element and a housing supporting the contactor; a board including a board substrate; Equipped with At least a part of the superconducting element, the housing, and the board substrate is in contact with a cooling base having a cooling function; At least one of the housing and the board substrate has a first hole; the other of the housing and the board substrate includes a first fixing portion disposed inside the first hole and a first main body portion other than the first fixing portion, the first fixing portion and the first main body portion are integrally molded, At least one of the cooling base and the board substrate has a second hole, the other of the cooling base and the board substrate includes a second fixing portion disposed inside the second hole and a second main body portion other than the second fixing portion, The second fixing portion and the second main body portion are integrally molded. Quantum devices. (Appendix 37) the terminal is formed on a terminal surface of the superconducting element, The fixing portion has a cylindrical shape having a central axis in a direction perpendicular to the terminal surface. 37. The quantum device of claim 36. (Appendix 38) the terminal is formed on a terminal surface of the superconducting element, At least one of the first hole and the second hole has a cylindrical shape having a central axis in a direction perpendicular to the terminal surface. 38. The quantum device of claim 36 or 37. (Appendix 39) the terminal is formed on a terminal surface of the superconducting element, At least one of the first fixing portion and the second fixing portion has a shape having a longitudinal direction when viewed from a direction perpendicular to the terminal surface. 37. The quantum device of claim 36. (Appendix 40) At least one of the first fixing portion and the second fixing portion has an elliptical shape when viewed from a direction perpendicular to the terminal surface. 39. The quantum device of claim 39. (Appendix 41) the terminal is formed on a terminal surface of the superconducting element, At least one of the first hole and the second hole has a shape having a longitudinal direction when viewed from a direction perpendicular to the terminal surface. 41. The quantum device of claim 39 or 40. (Appendix 42) At least one of the first hole and the second hole has an elliptical shape when viewed from a direction perpendicular to the terminal surface. 42. The quantum device of claim 41. (Appendix 43) the terminal is formed on a terminal surface of the superconducting element, a plurality of the first holes and a plurality of the first fixing portions are provided; a plurality of the second holes and a plurality of the second fixing portions are provided; The contacts are provided in plurality, When viewed from a direction perpendicular to the terminal surface, the centers of gravity of the first fixing portions and the second fixing portions and the centers of gravity of the contacts are within a predetermined range. 37. The quantum device of claim 36. (Appendix 44) The plurality of first fixing portions and the plurality of second fixing portions are arranged at positions facing each other across the center of gravity. 44. The quantum device of claim 43. (Appendix 45) a direction in which one set of the first fixing portions arranged at opposing positions faces each other is perpendicular to a direction in which another set of the opposing first fixing portions faces each other, a direction in which one set of the second fixing portions arranged at opposing positions faces each other is perpendicular to a direction in which another set of the second fixing portions arranged at opposing positions faces each other; 45. The quantum device of claim 44. (Appendix 46) At least one of the first fixing portion and the second fixing portion has a cylindrical shape having a central axis in a direction perpendicular to the terminal surface. 46. ​​A quantum device according to any one of appendices 43 to 45. (Appendix 47) the first fixing portion has a shape having a longitudinal direction when viewed in a direction perpendicular to the terminal surface, the second fixing portion has a shape having a longitudinal direction when viewed in a direction perpendicular to the terminal surface, the longitudinal direction of the plurality of first fixing portions and the longitudinal direction of the plurality of second fixing portions pass through the center of gravity; 47. The quantum device according to any one of appendices 43 to 46. (Appendix 48) the first fixing portion has a shape having a longitudinal direction when viewed in a direction perpendicular to the terminal surface, the second fixing portion has a shape having a longitudinal direction when viewed in a direction perpendicular to the terminal surface, a direction perpendicular to the longitudinal direction of the plurality of first fixing portions and a direction perpendicular to the longitudinal direction of the plurality of second fixing portions pass through the center of gravity; 47. The quantum device according to any one of appendices 43 to 46. (Appendix 49) The fixing portion has an elliptical shape when viewed in a direction perpendicular to the terminal surface. 49. The quantum device of claim 47 or 48. (Appendix 50) The fixing portion has a taper that increases in diameter toward the main body portion. 50. The quantum device according to any one of appendices 36 to 49. (Appendix 51) The housing includes at least one of quartz, plastic aluminum oxide, mica-based machinable ceramic, aluminum nitride, zirconia, macor-based machinable ceramic, glass, and resin. 51. The quantum device according to any one of appendices 36 to 50. (Appendix 52) the housing includes a silica filler; 52. The quantum device of claim 51. (Appendix 53) The board substrate includes at least one of epoxy, acrylic, urethane, polyimide, phenol, and liquid crystal polymer. 53. The quantum device according to any one of appendices 36 to 52. (Appendix 54) The board substrate contains a filler selected from the group consisting of silica, organic resin, and ceramic, or glass fiber. 54. The quantum device of claim 53. (Appendix 55) the board substrate has the first hole, the housing includes the first fixing portion and the first body portion, the board substrate has the second hole, the cooling base includes the second fixing portion and the second main body portion. 55. The quantum device according to any one of appendices 36 to 54. (Appendix 56) the housing has the first hole, the board substrate includes the first fixing portion and the first body portion, the cooling base has the second hole, the board substrate includes the second fixing portion and the second main body portion; 55. The quantum device according to any one of appendices 36 to 54. (Appendix 57) The superconducting element is a quantum element provided with a quantum circuit. 57. The quantum device according to any one of appendices 36 to 56. (Appendix 58) The quantum device comprises: a quantum chip including at least a part of the quantum circuit; an interposer on which the quantum chip is mounted; Including, The terminal is formed on the opposite side of the mounting surface of the interposer on which the quantum chip is mounted. 58. The quantum device of claim 57. (Appendix 59) The quantum chip is disposed inside a recess formed in a cooling base having a cooling function, a portion of the interposer contacting the cooling base; 59. The quantum device of claim 58. (Appendix 60) the quantum chip has a first surface mounted on the interposer and a second surface opposite the first surface; At least a portion of the second surface is in contact with the inner surface of the recess. 59. The quantum device of claim 59. (Appendix 61) the quantum chip has a first surface mounted on the interposer and a second surface opposite the first surface; At least a portion of the second surface is adhered or bonded to the inner surface of the recess. 59. The quantum device of claim 59. (Appendix 62) the quantum chip has a first surface mounted on the interposer and a second surface opposite the first surface; The second surface is disposed with a space interposed between it and the inner surface of the recess. 59. The quantum device of claim 59. (Appendix 63) the quantum chip includes the quantum circuit in which a resonator having a loop circuit in which superconducting materials are connected in a ring by Josephson junctions is formed; A recess is formed at the bottom of the recess, When viewed from a direction perpendicular to the first surface of the quantum chip mounted on the interposer, the region in which the quantum circuit is formed is included in the recessed region. 59. The quantum device of claim 59. (Appendix 64) the quantum chip includes the quantum circuit in which a resonator having a loop circuit in which superconducting materials are connected in a ring by Josephson junctions is formed; a through hole is formed in the bottom of the recess; When viewed from a direction perpendicular to the first surface of the quantum chip mounted on the interposer, the region in which the quantum circuit is formed is included in the region of the through hole. 59. The quantum device of claim 59. (Appendix 65) The recess is formed in a predetermined surface of the cooling base, A part of the mounting surface of the interposer on which the quantum chip is mounted is in contact with the predetermined surface. 65. The quantum device according to any one of appendices 59 to 64. (Appendix 66) The recess is formed in a predetermined surface of the cooling base, At least a portion of the side surface of the interposer is in contact with the inner surface of the recess. 65. The quantum device according to any one of appendices 59 to 64. (Appendix 67) The recess is formed in a predetermined surface of the cooling base, a stepped surface having a step with respect to the predetermined surface is formed around the opening of the recess, A part of the mounting surface of the interposer on which the quantum chip is mounted is in contact with the step surface. 65. The quantum device according to any one of appendices 59 to 64. (Appendix 68) The recess is formed in a predetermined surface of the cooling base, a stepped surface having a step with respect to the predetermined surface is formed around the opening of the recess, At least a part of the side surface of the interposer is in contact with a side surface between the step surface and the predetermined surface. 65. The quantum device according to any one of appendices 59 to 64. (Appendix 69) a part of the mounting surface of the interposer on which the quantum chip is mounted is disposed with a space between it and the step surface; 69. The quantum device of claim 68. (Appendix 70) At least one of the first hole and the second hole is a through hole. 70. The quantum device according to any one of appendices 56 to 69. [Explanation of symbols]

[0113] 1, 1a, 1b, 1c, 1d, 1e, 1f, 1g quantum devices 1h, 1i, 1j, 1k, 1l, 1x, 1y, 1z quantum devices 10 Quantum Chip 11 Page 1 12 Side 2 15 Chip substrate 16 wiring layer 17 Quantum circuit 17a Josephson junction 17b Loop circuit 17c resonator 18 areas 20 Interposer 21 Mounting surface 22 opposite side 23 Interposer wiring layer 23a Magnetic field application circuit 23b Readout section 24 Interposer wiring layer 24a terminal 25 Interposer board 26 TV 30 Cooling Base 31 Recess 32 specified surface 35 dent 37 Through hole 38 Countersunk 39 Step surface 40 sockets 41 One end face 42 Other end face 43 Side 45 Housing 45A Fixed part 45B main body 45C hole 47 Contactor 50 boards 51 Bottom surface 52 Top side 55 Board 55A Fixed part 55B main body 55C hole 55D Gap 56 volts 101 Quantum Devices 140 sockets 145 Housing 145A Fixed part 145B main body 145C hole BP Bump BL adhesive layer ML bonding layer QE quantum devices QE1 terminal surface

Claims

1. a superconducting element including a superconducting material; a socket including a contactor in contact with a terminal of the superconducting element and a housing supporting the contactor; a board including a board substrate; Equipped with At least one of the housing and the board substrate has a hole; the other of the housing and the board substrate includes a fixing portion disposed inside the hole and a main body portion other than the fixing portion, The fixing portion and the main body portion are integrally molded. Quantum devices.

2. the terminal is formed on a terminal surface of the superconducting element, a plurality of the holes and a plurality of the fixing portions are provided; The contacts are provided in plurality, When viewed from a direction perpendicular to the terminal surface, the centers of gravity of the plurality of fixing portions and the centers of gravity of the plurality of contacts are within a predetermined range. The quantum device of claim 1 .

3. The plurality of fixing portions are arranged at positions facing each other across the center of gravity. The quantum device of claim 2 .

4. The opposing direction of one set of the fixing portions arranged at opposing positions is perpendicular to the opposing direction of another set of the fixing portions arranged at opposing positions. The quantum device according to claim 2 or 3.

5. the terminal is formed on a terminal surface of the superconducting element, the fixing portion has a cylindrical shape having a central axis perpendicular to the terminal surface, The hole has a cylindrical shape having a central axis in a direction perpendicular to the terminal surface. The quantum device according to any one of claims 1 to 4.

6. the terminal is formed on a terminal surface of the superconducting element, the fixing portion has a shape having a longitudinal direction when viewed in a direction perpendicular to the terminal surface, The hole has a shape having a longitudinal direction when viewed in a direction perpendicular to the terminal surface. The quantum device according to any one of claims 1 to 4.

7. the fixing portion has a shape having a longitudinal direction when viewed in a direction perpendicular to the terminal surface, the longitudinal direction of the plurality of fixing portions or the lateral direction perpendicular to the longitudinal direction passes through the center of gravity; The quantum device of claim 2 .

8. The housing includes at least one of quartz, plastic aluminum oxide, mica-based machinable ceramic, aluminum nitride, zirconia, macor-based machinable ceramic, glass, and resin. The quantum device according to any one of claims 1 to 7.

9. The board substrate includes at least one of epoxy, acrylic, urethane, polyimide, phenol, and liquid crystal polymer. The quantum device according to any one of claims 1 to 8.

10. a superconducting element including a superconducting material; a socket including a contactor in contact with a terminal of the superconducting element and a housing supporting the contactor; a board including a board substrate; Equipped with At least a part of the superconducting element, the housing, and the board substrate is in contact with a cooling base having a cooling function; At least one of the housing and the board substrate has a first hole; the other of the housing and the board substrate includes a first fixing portion disposed inside the first hole and a first main body portion other than the first fixing portion, the first fixing portion and the first main body portion are integrally molded, At least one of the cooling base and the board substrate has a second hole, the other of the cooling base and the board substrate includes a second fixing portion disposed inside the second hole and a second main body portion other than the second fixing portion, The second fixing portion and the second main body portion are integrally molded. Quantum devices.

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