Vapor deposition mask group, electronic device manufacturing method, and electronic device

Abstract

To provide a vapor deposition mask group without reducing a light transmittance even when increasing the area of a negative electrode.SOLUTION: A vapor deposition mask group may include; a first vapor deposition mask having a plurality of first open holes including an area arranged a first direction D1 and a second direction D2 intersecting the first direction; and a second vapor deposition mask having a plurality of second open holes 25B arranged in the first and second directions. When superimposing the second vapor deposition mask on the first vapor deposition mask, the first open hole may partially overlap with the second open hole.SELECTED DRAWING: Figure 16

Description

[Technical Field]

[0001] TECHNICAL FIELD Embodiments of the present disclosure relate to a deposition mask group, a method for manufacturing an electronic device, and an electronic device. [Background technology]

[0002] Display devices used in portable devices such as smartphones and tablet PCs preferably have high resolution, with a pixel density of, for example, 400 ppi or higher. There is also growing demand for portable devices to support ultra-high definition. For ultra-high definition, it is preferable for the pixel density of the display device to be, for example, 800 ppi or higher.

[0003] Among display devices, organic electroluminescence (EL) display devices have attracted attention due to their excellent response, low power consumption, and high contrast. A known method for forming pixels in organic EL display devices is to form pixels and electrodes using a vapor deposition mask with through-holes. For example, a substrate on which an anode is formed in a pattern corresponding to the pixels is first prepared. Next, an organic material is deposited on the anode through the through-holes in the vapor deposition mask, forming an organic layer on the anode. Next, a conductive material is deposited on the organic layer through the through-holes in the vapor deposition mask, forming a cathode on the organic layer. [Prior art documents] [Patent documents]

[0004] [Patent Document 1] Japanese Patent Application Laid-Open No. 2000-82582 Summary of the Invention

[0005] The cathode of an electronic device such as an organic electroluminescence (EL) display device may be formed not only in a portion overlapping with the anode and organic layer when viewed along the normal direction of the substrate, but also in a portion not overlapping with the anode and organic layer. The larger the area of ​​the cathode, the lower the electrical resistance of the cathode and the better its electrical characteristics. On the other hand, the larger the area of ​​the cathode, the lower the light transmittance of the electronic device including the substrate, anode, organic layer, and cathode.

[0006] An object of the embodiments of the present disclosure is to provide a deposition mask group that can effectively solve such problems.

[0007] A deposition mask group according to an embodiment of the present disclosure may include: a first deposition mask having a plurality of first through holes including regions arranged along a first direction and a second direction intersecting the first direction; and a second deposition mask having a plurality of second through holes arranged along the first direction and the second direction. When the first deposition mask and the second deposition mask are overlapped, the first through holes and the second through holes may partially overlap each other.

[0008] In at least one embodiment of the present disclosure, the resistance and area of ​​the electrodes formed on the substrate can be adjusted. [Brief explanation of the drawings]

[0009] [Figure 1] FIG. 1 is a cross-sectional view showing an example of an electronic device manufactured using a deposition mask group according to an embodiment of the present disclosure. [Figure 2] FIG. 2 is an enlarged cross-sectional view showing an element of the electronic device of FIG. [Figure 3] FIG. 2 is a plan view showing an example of a substrate on which a first electrode is formed. [Figure 4] 1 is a plan view showing an example of a substrate on which a first electrode and a current-carrying layer are formed. FIG. [Figure 5] 2 is a plan view showing an example of a substrate on which a first electrode, a current-carrying layer, and a first layer of a second electrode are formed. FIG. [Figure 6]1 is a plan view showing an example of a substrate on which a first electrode, a current-carrying layer, a first layer of a second electrode, and a second layer of a second electrode are formed. [Figure 7] FIG. 1 is a diagram showing a vapor deposition apparatus equipped with a vapor deposition mask device. [Figure 8] FIG. 2 is a plan view showing a deposition mask device. [Figure 9] FIG. 2 is an enlarged plan view showing a deposition mask device including a first deposition mask. [Figure 10] FIG. 2 is an enlarged plan view showing a deposition mask device including a second deposition mask. [Figure 11] FIG. 2 is a diagram showing an example of a cross-sectional structure of a deposition mask. [Figure 12] FIG. 2 is a plan view showing an example of a first vapor deposition mask. [Figure 13] 13 is an enlarged plan view showing the first vapor deposition mask of FIG. 12. FIG. [Figure 14] FIG. 4 is a plan view showing an example of a second vapor deposition mask. [Figure 15] FIG. 15 is an enlarged plan view showing the second vapor deposition mask of FIG. [Figure 16] FIG. 10 is a diagram showing a case where a first vapor deposition mask and a second vapor deposition mask are overlapped. [Figure 17] 3 is a plan view showing an example of a substrate on which a first current-carrying layer, a second current-carrying layer, and a third current-carrying layer are formed. FIG. [Figure 18] 10 is a plan view showing an example of a substrate in which a second electrode is formed on a first current-carrying layer, a second current-carrying layer, and a third current-carrying layer. FIG. [Figure 19] 19 is a cross-sectional view of the electronic device of FIG. 18 taken along line XIX-XIX. [Figure 20] 20 is a cross-sectional view of the electronic device of FIG. 18 taken along line XX-XX. [Figure 21] 19 is a cross-sectional view of the electronic device of FIG. 18 taken along line XXI-XXI. [Figure 22] FIG. 2 is a plan view showing an example of a first vapor deposition mask. [Figure 23] FIG. 4 is a plan view showing an example of a second vapor deposition mask. [Figure 24]FIG. 10 is a plan view showing an example of a third vapor deposition mask. [Figure 25] FIG. 2 is a diagram showing a case where a first vapor deposition mask, a second vapor deposition mask, and a third vapor deposition mask are overlapped. [Figure 26] FIG. 2 is a plan view showing an example of a first vapor deposition mask. [Figure 27] FIG. 4 is a plan view showing an example of a second vapor deposition mask. [Figure 28] FIG. 10 is a plan view showing an example of a third vapor deposition mask. [Figure 29] FIG. 2 is a diagram showing a case where a first vapor deposition mask, a second vapor deposition mask, and a third vapor deposition mask are overlapped. [Figure 30] 1 is a plan view showing an example of an electronic device including a first current-carrying layer, a second current-carrying layer, and a third current-carrying layer. [Figure 31] 31 is a cross-sectional view of the electronic device of FIG. 30 taken along line XXXI-XXXI. [Figure 32] FIG. 2 is a plan view showing an example of a first vapor deposition mask. [Figure 33] FIG. 4 is a plan view showing an example of a second vapor deposition mask. [Figure 34] FIG. 10 is a plan view showing an example of a third vapor deposition mask. [Figure 35] FIG. 2 is a diagram showing a case where a first vapor deposition mask, a second vapor deposition mask, and a third vapor deposition mask are overlapped. [Figure 36] 3 is a plan view showing an example of a substrate on which a first current-carrying layer, a second current-carrying layer, and a third current-carrying layer are formed. FIG. [Figure 37] 10 is a plan view showing an example of a substrate in which a second electrode is formed on a first current-carrying layer, a second current-carrying layer, and a third current-carrying layer. FIG. [Figure 38] 37 is a cross-sectional view of the electronic device of FIG. 36 taken along line XXXVIII-XXXVIII. [Figure 39] FIG. 2 is a plan view showing an example of a first vapor deposition mask. [Figure 40] FIG. 4 is a plan view showing an example of a second vapor deposition mask. [Figure 41] FIG. 10 is a plan view showing an example of a third vapor deposition mask. [Figure 42A]FIG. 2 is a diagram showing a case where a first vapor deposition mask, a second vapor deposition mask, and a third vapor deposition mask are overlapped. [Figure 42B] FIG. 2 is a diagram showing a case where a first vapor deposition mask, a second vapor deposition mask, and a third vapor deposition mask are overlapped. [Figure 43] 10 is a plan view showing an example of a substrate in which a second electrode is formed on a first current-carrying layer, a second current-carrying layer, and a third current-carrying layer. FIG. [Figure 44] 44 is a cross-sectional view of the electronic device of FIG. 43 taken along line XXXXIV-XXXXIV. [Figure 45] FIG. 2 is a plan view showing an example of a first vapor deposition mask. [Figure 46] FIG. 4 is a plan view showing an example of a second vapor deposition mask. [Figure 47] FIG. 10 is a plan view showing an example of a third vapor deposition mask. [Figure 48A] FIG. 2 is a diagram showing a case where a first vapor deposition mask, a second vapor deposition mask, and a third vapor deposition mask are overlapped. [Figure 48B] FIG. 2 is a diagram showing a case where a first vapor deposition mask, a second vapor deposition mask, and a third vapor deposition mask are overlapped. [Figure 49] 10 is a plan view showing an example of a substrate in which a second electrode is formed on a first current-carrying layer, a second current-carrying layer, and a third current-carrying layer. FIG. [Figure 50] FIG. 50 is a cross-sectional view of the electronic device of FIG. 49 taken along line XXXXX-XXXXX. [Figure 51] FIG. 2 is a plan view showing an example of a first vapor deposition mask. [Figure 52] FIG. 4 is a plan view showing an example of a second vapor deposition mask. [Figure 53] FIG. 10 is a plan view showing an example of a third vapor deposition mask. [Figure 54A] FIG. 2 is a diagram showing a case where a first vapor deposition mask, a second vapor deposition mask, and a third vapor deposition mask are overlapped. [Figure 54B] FIG. 2 is a diagram showing a case where a first vapor deposition mask, a second vapor deposition mask, and a third vapor deposition mask are overlapped. [Figure 55] 3 is a plan view showing an example of a substrate on which a first current-carrying layer, a second current-carrying layer, and a third current-carrying layer are formed. FIG. [Figure 56]10 is a plan view showing an example of a substrate in which a second electrode is formed on a first current-carrying layer, a second current-carrying layer, and a third current-carrying layer. FIG. [Figure 57] FIG. 2 is a plan view showing an example of a first vapor deposition mask. [Figure 58] FIG. 4 is a plan view showing an example of a second vapor deposition mask. [Figure 59] FIG. 10 is a plan view showing an example of a third vapor deposition mask. [Figure 60] FIG. 2 is a diagram showing a case where a first vapor deposition mask, a second vapor deposition mask, and a third vapor deposition mask are overlapped. [Figure 61] 3 is a plan view showing an example of a substrate on which a first current-carrying layer, a second current-carrying layer, and a third current-carrying layer are formed. FIG. [Figure 62] 10 is a plan view showing an example of a substrate in which a second electrode is formed on a first current-carrying layer, a second current-carrying layer, and a third current-carrying layer. FIG. [Figure 63] FIG. 2 is a plan view showing an example of a first vapor deposition mask. [Figure 64] FIG. 4 is a plan view showing an example of a second vapor deposition mask. [Figure 65] FIG. 10 is a plan view showing an example of a third vapor deposition mask. [Figure 66] FIG. 2 is a diagram showing a case where a first vapor deposition mask, a second vapor deposition mask, and a third vapor deposition mask are overlapped. [Figure 67] 10 is a plan view showing an example of a substrate in which a second electrode is formed on a first current-carrying layer, a second current-carrying layer, and a third current-carrying layer. FIG. [Figure 68] FIG. 2 is a plan view showing an example of a first vapor deposition mask. [Figure 69] FIG. 4 is a plan view showing an example of a second vapor deposition mask. [Figure 70] FIG. 10 is a diagram showing a case where a first vapor deposition mask and a second vapor deposition mask are overlapped. [Figure 71] FIG. 2 is a plan view showing an example of a first vapor deposition mask. [Figure 72] FIG. 1 is a plan view illustrating an example of an electronic device. [Figure 73] FIG. 1 is a plan view illustrating an example of an electronic device. DETAILED DESCRIPTION OF THE INVENTION

[0010] In this specification and drawings, unless otherwise specified, terms that refer to a material that forms the basis of a certain configuration, such as "substrate," "base material," "plate," "sheet," and "film," are not to be distinguished from one another solely on the basis of differences in name.

[0011] In this specification and drawings, unless otherwise specified, terms that specify shapes, geometric conditions, and their degrees, such as "parallel" and "orthogonal," and values ​​of lengths and angles, are not to be construed as being bound by strict meanings, but rather as including a range within which similar functions can be expected.

[0012] In this specification and drawings, unless otherwise specified, when a certain component, such as a certain region, is referred to as "above" or "below," "upper" or "lower," or "upward" or "below" another component, such as another region, this includes cases where the component is in direct contact with the other component. It also includes cases where another component is contained between the component and the other component, i.e., cases where the components are in indirect contact. Furthermore, unless otherwise specified, the terms "above," "upper side," or "upper," or "under," "lower side," or "lower" may be used in the up-down direction.

[0013] In this specification and drawings, unless otherwise specified, the same or similar symbols are used to designate the same parts or parts having similar functions, and repeated explanations may be omitted. Furthermore, for the sake of convenience, the dimensional ratios of the drawings may differ from the actual ratios, and some components may be omitted from the drawings.

[0014] Unless otherwise specified in the present specification and drawings, one embodiment of the present specification may be combined with other embodiments to the extent that no contradiction occurs. In addition, other embodiments may also be combined with each other to the extent that no contradiction occurs.

[0015] Unless otherwise specified, in this specification and drawings, when a plurality of steps are disclosed in a method such as a manufacturing method, other steps that are not disclosed may be performed between the disclosed steps. In addition, the order of the disclosed steps is arbitrary within the range that does not cause contradictions.

[0016] In this specification and drawings, unless otherwise specified, a numerical range expressed by the symbol "to" includes the numerical values ​​before and after the symbol "to." For example, the numerical range defined by the expression "34 to 38 mass%" is the same as the numerical range defined by the expression "34 mass% or more and 38 mass% or less."

[0017] In this embodiment, an example will be described in which a deposition mask group including a plurality of deposition masks is used to form electrodes in a desired pattern on a substrate when manufacturing an organic EL display device. However, the use of the deposition mask group is not particularly limited, and this embodiment can be applied to deposition mask groups used for various purposes. For example, the deposition mask group of this embodiment may be used to form electrodes of a device for displaying or projecting images or videos to express virtual reality (VR) or augmented reality (AR). The deposition mask group of this embodiment may also be used to form electrodes of a display device other than an organic EL display device, such as an electrode of a liquid crystal display device. The deposition mask group of this embodiment may also be used to form electrodes of an electronic device other than a display device, such as an electrode of a pressure sensor.

[0018] Hereinafter, an embodiment of the present disclosure will be described in detail with reference to the drawings. Note that the embodiment described below is an example of an embodiment of the present disclosure, and the present disclosure should not be interpreted as being limited to only these embodiments.

[0019] A first aspect of the present disclosure is a deposition mask group, a first deposition mask having two or more first through holes arranged along two different directions; a second deposition mask having two or more second through holes arranged along two different directions; a third vapor deposition mask having two or more third through holes, The deposition mask group is such that, when the first deposition mask, the second deposition mask, and the third deposition mask are stacked, the first through holes partially overlap with the second through holes or the third through holes.

[0020] A second aspect of the present disclosure is the deposition mask group according to the first aspect, The two or more first through holes may include two or more mask first basic regions arranged along two different directions, and two or more mask first extension regions extending from the mask first basic regions so as to partially overlap the second through holes or the third through holes when the first vapor deposition mask, the second vapor deposition mask, and the third vapor deposition mask are superimposed.

[0021] A third aspect of the present disclosure is a deposition mask group according to the second aspect, the two or more second through holes include two or more second mask basic regions arranged along two different directions and two or more second mask extended regions extending from the second mask basic regions, or the two or more third through holes include two or more third mask basic regions arranged along two different directions and two or more third mask extended regions extending from the third mask basic regions, When the first vapor deposition mask, the second vapor deposition mask, and the third vapor deposition mask are overlapped, at least a part of the two or more mask first extended regions may wholly or partially overlap the mask second extended region or the mask third extended region.

[0022] A fourth aspect of the present disclosure is the deposition mask group according to the third aspect, The area of ​​the second mask extension region or the third mask extension region that overlaps with the first mask extension region may partially overlap with the first mask basic region.

[0023] A fifth aspect of the present disclosure is a deposition mask group according to any one of the second to fourth aspects described above, In a direction perpendicular to a direction in which the first mask extended region extends, the dimension of the first mask extended region may be 0.9 times or less the dimension of the first mask basic region.

[0024] A sixth aspect of the present disclosure is a deposition mask group according to any one of the second to fifth aspects described above, The arrangement direction of the first mask fundamental regions may coincide with the direction in which the first mask extended regions extend from the first mask fundamental regions.

[0025] A seventh aspect of the present disclosure is a deposition mask group according to any one of the second aspect to the fifth aspect, The arrangement direction of the first mask basic regions may be different from the direction in which the first mask extended regions extend from the first mask basic regions.

[0026] An eighth aspect of the present disclosure is the deposition mask group according to the first aspect, the two or more first through holes include two or more mask first basic regions and two or more mask first auxiliary regions arranged along two different directions, When the first vapor deposition mask, the second vapor deposition mask, and the third vapor deposition mask are superimposed, the mask first auxiliary region may extend so as to partially overlap two adjacent second through holes, two adjacent third through holes, or adjacent second through holes and third through holes.

[0027] A ninth aspect of the present disclosure is a deposition mask group according to the eighth aspect, In a direction perpendicular to the direction in which the first mask auxiliary region extends, the dimension of the first mask auxiliary region may be 0.9 times or less the dimension of the first mask basic region.

[0028] A tenth aspect of the present disclosure is a deposition mask group according to the ninth aspect, The first mask auxiliary region may be connected to the first mask fundamental region.

[0029] An eleventh aspect of the present disclosure is a deposition mask group according to the ninth aspect, The first mask auxiliary region may not be connected to the first mask fundamental region.

[0030] A twelfth aspect of the present disclosure is a deposition mask group according to any one of the first to eleventh aspects described above, When the first vapor deposition mask, the second vapor deposition mask, and the third vapor deposition mask are superimposed, at least some of the two or more first through holes may be connected to other first through holes via the second through holes and the third through holes.

[0031] A thirteenth aspect of the present disclosure is a deposition mask group according to any one of the first to eleventh aspects described above, When the first vapor deposition mask, the second vapor deposition mask, and the third vapor deposition mask are superimposed, at least some of the two or more first through holes may be connected to other first through holes via the second through holes or the third through holes.

[0032] A fourteenth aspect of the present disclosure is a deposition mask group, a first deposition mask having two or more first through holes arranged along a first direction; a second vapor deposition mask having two or more second through holes, the first through-hole includes two or more first mask elementary regions arranged along a second direction intersecting the first direction, and a first mask extension region extending to connect two of the first mask elementary regions adjacent to each other in the second direction and having a dimension smaller than that of the first mask elementary regions in a direction perpendicular to the second direction; The deposition mask group is such that, when the first deposition mask and the second deposition mask are superimposed on each other, the first through holes and the second through holes partially overlap each other.

[0033] A fifteenth aspect of the present disclosure is the deposition mask group according to the fourteenth aspect, At least some of the two or more mask first basic regions may be connected to other mask first basic regions via the second through holes when the first vapor deposition mask and the second vapor deposition mask are superimposed.

[0034] A sixteenth aspect of the present disclosure is a deposition mask group according to the fourteenth aspect or the fifteenth aspect, When the first vapor deposition mask and the second vapor deposition mask are overlapped, the first mask extension region and the second through hole may overlap entirely or partially.

[0035] A seventeenth aspect of the present disclosure is the deposition mask group according to the sixteenth aspect, When the first vapor deposition mask and the second vapor deposition mask are superimposed, the second through hole may wholly or partially overlap two of the mask first basic regions adjacent to each other in the second direction and the mask first extended region connected to the two mask first basic regions.

[0036] An eighteenth aspect of the present disclosure is a deposition mask group according to any one of the fourteenth to seventeenth aspects described above, In a direction perpendicular to the second direction, the size of the first mask extended region may be 0.9 times or less the size of the first mask basic region.

[0037] A nineteenth aspect of the present disclosure is a deposition mask group, a first deposition mask having two or more first through holes; a second vapor deposition mask having two or more second through holes, the two or more first through holes include two or more mask first basic regions arranged along a first direction and arranged along a second direction intersecting the first direction, and two or more mask first auxiliary regions located between two of the mask first basic regions adjacent to each other in the second direction and having dimensions smaller than those of the mask first basic regions in the second direction; two or more of the second through holes are arranged along the first direction and the second direction, When the first vapor deposition mask and the second vapor deposition mask are superimposed on each other, the mask first auxiliary region forms a vapor deposition mask group that extends so as to partially overlap two of the second through holes adjacent to each other in the first direction.

[0038] A twentieth aspect of the present disclosure is the deposition mask group according to the nineteenth aspect, When the first vapor deposition mask and the second vapor deposition mask are superimposed on each other, the second through-hole may extend so as to partially overlap two of the first mask basic regions adjacent to each other in the second direction.

[0039] A twenty-first aspect of the present disclosure is a deposition mask group according to the nineteenth aspect or the twentieth aspect, In the second direction, the dimension of the first mask auxiliary region may be 0.9 times or less the dimension of the first mask basic region.

[0040] A twenty-second aspect of the present disclosure is a method for manufacturing an electronic device, comprising: a second electrode forming step of forming a second electrode on a current-carrying layer on a first electrode on a substrate using a deposition mask group according to any one of the first aspect to the thirteenth aspect; The second electrode forming step includes: forming a first layer of the second electrode by a vapor deposition method using the first vapor deposition mask; forming a second layer of the second electrode by a vapor deposition method using the second vapor deposition mask; forming a third layer of the second electrode by a vapor deposition method using the third vapor deposition mask.

[0041] A twenty-third aspect of the present disclosure is a method for manufacturing an electronic device, comprising: a second electrode forming step of forming a second electrode on a current-carrying layer on a first electrode on a substrate using a deposition mask group according to any one of the fourteenth aspect to the twenty-first aspect; The second electrode forming step includes: forming a first layer of the second electrode by a vapor deposition method using the first vapor deposition mask; forming a second layer of the second electrode by a vapor deposition method using the second vapor deposition mask.

[0042] A twenty-fourth aspect of the present disclosure is an electronic device, comprising: a first electrode located on the substrate; Two or more current-carrying layers are located on the first electrode and arranged along two different directions; two or more second electrodes located on the current-carrying layer; the second electrode includes two or more first layers arranged along two different directions, two or more second layers arranged along two different directions, and two or more third layers; The electronic device has the first layer partially overlapping with the second layer or the third layer.

[0043] A twenty-fifth aspect of the present disclosure is an electronic device according to the twenty-fourth aspect, The two or more first layers may include two or more electrode first basic regions arranged along two different directions, and two or more electrode first extension regions extending from the electrode first basic regions so as to partially overlap the second layer or the third layer.

[0044] A twenty-sixth aspect of the present disclosure is an electronic device according to the twenty-fifth aspect, the two or more second layers include two or more electrode second basic regions arranged along two different directions and two or more electrode second extension regions extending from the second electrode basic regions, or the two or more third layers include two or more electrode third basic regions arranged along two different directions and two or more electrode third extension regions extending from the third electrode basic regions, At least a portion of the two or more first electrode expansion regions may wholly or partially overlap the second electrode expansion region or the third electrode expansion region.

[0045] A twenty-seventh aspect of the present disclosure is an electronic device according to the twenty-sixth aspect, A region of the second electrode extension region or the third electrode extension region that overlaps with the first electrode extension region may partially overlap with the first electrode basic region.

[0046] A 28th aspect of the present disclosure provides an electronic device according to each of the 25th to 27th aspects described above, In a direction perpendicular to the direction in which the first electrode extension region extends, the dimension of the first electrode extension region may be 0.9 times or less the dimension of the first electrode basic region.

[0047] A 29th aspect of the present disclosure is an electronic device according to each of the 25th to 28th aspects described above, The arrangement direction of the first electrode basic regions may coincide with the direction in which the first electrode extension regions extend from the first electrode basic regions.

[0048] A 30th aspect of the present disclosure provides an electronic device according to each of the 25th to 28th aspects described above, The arrangement direction of the first electrode basic regions may be different from the direction in which the first electrode extension regions extend from the first electrode basic regions.

[0049] A thirty-first aspect of the present disclosure is an electronic device according to the twenty-fourth aspect, the two or more first layers include two or more electrode first basic regions and two or more electrode first auxiliary regions arranged along two different directions; The electrode first auxiliary region may extend so as to partially overlap two adjacent second layers, two adjacent third layers, or adjacent second and third layers.

[0050] A thirty-second aspect of the present disclosure is an electronic device according to the thirty-first aspect, In a direction perpendicular to the direction in which the electrode first auxiliary region extends, the dimension of the electrode first auxiliary region may be 0.9 times or less the dimension of the electrode first basic region.

[0051] A thirty-third aspect of the present disclosure provides an electronic device according to the thirty-second aspect, The electrode first auxiliary region may be connected to the electrode first basic region.

[0052] A thirty-fourth aspect of the present disclosure is an electronic device according to the thirty-second aspect, The electrode first auxiliary region may not be connected to the electrode first basic region.

[0053] A thirty-fifth aspect of the present disclosure is an electronic device according to each of the twenty-fourth to thirty-fourth aspects described above, At least some of the two or more first layers may be connected to other first layers via the second layer and the third layer.

[0054] A thirty-sixth aspect of the present disclosure provides an electronic device according to each of the twenty-fourth to thirty-fourth aspects, At least some of the two or more first layers may be connected to other first layers via the second layer or the third layer.

[0055] A thirty-seventh aspect of the present disclosure is an electronic device, comprising: a first electrode located on the substrate; a current-carrying layer located on the first electrode; a second electrode located on the current-carrying layer, the second electrode includes two or more first layers and two or more second layers arranged along a first direction; the first layer includes two or more first electrode basic regions arranged along a second direction intersecting the first direction, and first electrode extension regions extending to connect two adjacent first electrode basic regions in the second direction and having a dimension smaller than that of the first electrode basic regions in a direction perpendicular to the second direction; The electronic device has the first layer and the second layer partially overlapping each other.

[0056] A thirty-eighth aspect of the present disclosure is an electronic device according to the thirty-seventh aspect, At least some of the two or more electrode first basic regions may be connected to other electrode first basic regions via the second layer.

[0057] A thirty-ninth aspect of the present disclosure is an electronic device according to each of the thirty-seventh aspect or the thirty-eighth aspect, The electrode first extension region and the second layer may overlap entirely or partially.

[0058] A fortieth aspect of the present disclosure is an electronic device according to the thirty-ninth aspect, The second layer may wholly or partially overlap two of the electrode first basic regions adjacent to each other in the second direction and the electrode first extension region connected to the two electrode first basic regions.

[0059] A forty-first aspect of the present disclosure provides an electronic device according to each of the thirty-seventh to fortieth aspects described above, In a direction perpendicular to the second direction, the dimension of the first electrode extension region may be 0.9 times or less the dimension of the first electrode basic region.

[0060] A forty-second aspect of the present disclosure is an electronic device, comprising: a first electrode located on the substrate; a current-carrying layer located on the first electrode; a second electrode located on the current-carrying layer, the second electrode comprises two or more first layers and two or more second layers; The two or more first layers include two or more electrode first basic regions arranged along a first direction and arranged along a second direction intersecting the first direction, and two or more electrode first auxiliary regions located between two of the electrode first basic regions adjacent to each other in the second direction and having dimensions smaller than those of the electrode first basic regions in the second direction, two or more of the second layers are arranged along the first direction and the second direction, The electrode first auxiliary region is an electronic device that extends so as to partially overlap two of the second layers adjacent to each other in the first direction.

[0061] A forty-third aspect of the present disclosure provides an electronic device according to the forty-second aspect, The second layer may extend so as to partially overlap two of the electrode first basic regions adjacent to each other in the second direction.

[0062] A forty-fourth aspect of the present disclosure is an electronic device according to each of the forty-second aspect or the forty-third aspect, In the second direction, the dimension of the electrode first auxiliary region may be 0.9 times or less the dimension of the electrode first basic region.

[0063] An example of an electronic device 100 including electrodes formed using the deposition mask group of this embodiment will be described below.

[0064] 1 is a cross-sectional view showing an electronic device 100. The electronic device 100 may include a substrate 91 and a plurality of elements 110 arranged along an in-plane direction of the substrate 91. Although not shown, the elements 110 may also be arranged in the depth direction of FIG. 1. The elements 110 may include a first electrode 120, a current-carrying layer 130 located on the first electrode 120, and a second electrode 140 located on the current-carrying layer 130.

[0065] The substrate 91 may be an insulating plate-like member, and is preferably transparent to allow light to pass through.

[0066] When the substrate 91 has a predetermined transparency, the transparency of the substrate 91 is preferably such that it can transmit light emitted from the current-carrying layer 130 to perform display. For example, the transmittance of the substrate 91 in the visible light range is preferably 80% or more, and more preferably 90% or more. The transmittance of the substrate 91 can be measured by a test method for total light transmittance of plastic-transparent materials in accordance with JIS K7361-1.

[0067] The substrate 91 may or may not be flexible, and can be selected appropriately depending on the application of the electronic device 100.

[0068] Examples of materials for the substrate 91 include rigid materials with no flexibility, such as quartz glass, Pyrex (registered trademark) glass, and synthetic quartz plate, and flexible materials with flexibility, such as resin films, optical resin plates, and thin glass. The base material may also be a laminate having a barrier layer on one or both sides of a resin film.

[0069] The thickness of the substrate 91 can be appropriately selected depending on the material used for the substrate 91 and the intended use of the electronic device 100, and may be, for example, 0.005 mm or more. The thickness of the substrate 91 may also be 5 mm or less.

[0070] The element 110 is configured to achieve some function by applying a voltage between the first electrode 120 and the second electrode 140 or by causing a current to flow between the first electrode 120 and the second electrode 140.

[0071] The first electrode 120 includes a conductive material. For example, the first electrode 120 includes a metal, a conductive metal oxide, or another conductive inorganic material. The first electrode 120 may include a transparent and conductive metal oxide such as indium tin oxide.

[0072] Examples of materials that can be used to form the first electrode 120 include metals such as Au, Cr, Mo, Ag, and Mg; inorganic oxides such as indium tin oxide (ITO), indium zinc oxide (IZO), zinc oxide, and indium oxide; and conductive polymers such as metal-doped polythiophene. These conductive materials may be used alone or in combination of two or more. When two or more types are used, layers made of each material may be stacked. Alternatively, an alloy containing two or more materials may be used. For example, a magnesium alloy such as MgAg may be used.

[0073] The current-carrying layer 130 is a layer that performs some function when current is applied thereto. "Current-carrying" means that a voltage is applied to the current-carrying layer 130 or that a current flows through the current-carrying layer 130. Examples of the current-carrying layer 130 include a layer that emits light when current is applied thereto, and a layer whose light transmittance or refractive index changes when current is applied thereto. The current-carrying layer 130 may contain a semiconductor material. The semiconductor material may be an organic semiconductor material or an inorganic semiconductor material.

[0074] When the current-carrying layer 130 includes a light-emitting layer that emits light when current is applied, the current-carrying layer 130 may further include a hole-injection layer, a hole-transport layer, an electron-transport layer, an electron-injection layer, or the like. For example, when the first electrode 120 is an anode, the current-carrying layer 130 may have a hole injection transport layer between the light-emitting layer and the first electrode 120. The hole injection transport layer may be a hole injection layer having a hole injection function, a hole transport layer having a hole transport function, or a layer having both a hole injection function and a hole transport function. The hole injection transport layer may also be a layer formed by laminating a hole injection layer and a hole transport layer. When the second electrode 140 is a cathode, the current-carrying layer 130 may have an electron injection transport layer between the light-emitting layer and the second electrode 140. The electron injection transport layer may be an electron injection layer having an electron injection function, an electron transport layer having an electron transport function, or a layer having both the electron injection function and the electron transport function. The electron injection transport layer may also be a layer formed by laminating an electron injection layer and an electron transport layer.

[0075] The light-emitting layer contains a light-emitting material and may contain an additive to improve leveling properties.

[0076] As the light-emitting material, known materials can be used, such as dye-based materials, metal complex-based materials, and polymer-based materials. Examples of dye-based materials include cyclopentadiene derivatives, tetraphenylbutadiene derivatives, triphenylamine derivatives, oxadiazole derivatives, pyrazoloquinoline derivatives, distyrylbenzene derivatives, distyrylarylene derivatives, silole derivatives, thiophene ring compounds, pyridine ring compounds, perinone derivatives, perylene derivatives, oligothiophene derivatives, oxadiazole dimers, and pyrazoline dimers. Examples of metal complex materials include aluminum quinolinol complexes, benzoquinolinol beryllium complexes, benzoxazole zinc complexes, benzothiazole zinc complexes, azomethyl zinc complexes, porphyrin zinc complexes, and europium complexes, which have a central metal such as Al, Zn, or Be, or a rare earth metal such as Tb, Eu, or Dy, and a ligand having an oxadiazole, thiadiazole, phenylpyridine, phenylbenzimidazole, or quinoline structure. Examples of polymeric materials include polyparaphenylene vinylene derivatives, polythiophene derivatives, polyparaphenylene derivatives, polysilane derivatives, polyacetylene derivatives, polyvinylcarbazole derivatives, polyfluorene derivatives, polyquinoxaline derivatives, and copolymers thereof.

[0077] The light-emitting layer may contain a dopant for the purpose of improving light-emitting efficiency, changing the light-emitting wavelength, etc. Examples of dopants include perylene derivatives, coumarin derivatives, rubrene derivatives, quinacridone derivatives, squarium derivatives, porphyrin derivatives, styryl dyes, tetracene derivatives, pyrazoline derivatives, decacyclene, phenoxazone, quinoxaline derivatives, carbazole derivatives, and fluorene derivatives. Furthermore, as the dopant, an organometallic complex having a heavy metal ion such as platinum or iridium at its center and exhibiting phosphorescence may also be used. One dopant may be used alone, or two or more dopants may be used.

[0078] Furthermore, as the light-emitting material and the dopant, for example, the materials described in

[0094] to

[0099] of JP-A No. 2010-272891 and

[0053] to

[0057] of WO 2012 / 132126 can also be used.

[0079] The thickness of the light-emitting layer is not particularly limited as long as it is thick enough to provide a site for recombination of electrons and holes and thereby exhibit the function of emitting light, and can be, for example, 1 nm or more and 500 nm or less.

[0080] Known hole injection and transport materials can be used in the hole injection and transport layer. Examples include triazole derivatives, oxadiazole derivatives, imidazole derivatives, polyarylalkane derivatives, pyrazoline derivatives, pyrazolone derivatives, phenylenediamine derivatives, arylamine derivatives, amino-substituted chalcone derivatives, oxazole derivatives, styrylanthracene derivatives, fluorenone derivatives, hydrazone derivatives, stilbene derivatives, silazane derivatives, polythiophene derivatives, polyaniline derivatives, polypyrrole derivatives, phenylamine derivatives, anthracene derivatives, carbazole derivatives, fluorene derivatives, distyrylbenzene derivatives, polyphenylenevinylene derivatives, porphyrin derivatives, and styrylamine derivatives. Other examples include spiro compounds, phthalocyanine compounds, and metal oxides. In addition, for example, compounds described in JP 2011-119681 A, WO 2012 / 018082 A, JP 2012-069963 A, and WO 2012 / 132126, paragraph

[0106] can also be appropriately selected and used.

[0081] When the hole injection transport layer is a laminate of a hole injection layer and a hole transport layer, the hole injection layer may contain additive A, the hole transport layer may contain additive A, or the hole injection layer and the hole transport layer may contain additive A. Additive A may be a low molecular weight compound or a high molecular weight compound. Specific examples of additive A include fluorine-based compounds, ester-based compounds, and hydrocarbon-based compounds.

[0082] Known electron injection / transport materials can be used in the electron injection / transport layer. Examples include alkali metals, alkali metal alloys, alkali metal halides, alkaline earth metals, alkaline earth metal halides, alkaline earth metal oxides, alkali metal organic complexes, magnesium halides or oxides, and aluminum oxide. Examples of electron injection / transport materials include bathocuproine, bathophenanthroline, phenanthroline derivatives, triazole derivatives, oxadiazole derivatives, pyridine derivatives, nitro-substituted fluorene derivatives, anthraquinodimethane derivatives, diphenylquinone derivatives, thiopyran dioxide derivatives, aromatic ring tetracarboxylic acid anhydrides such as naphthalene and perylene, carbodiimides, fluorenylidenemethane derivatives, anthraquinodimethane derivatives, anthrone derivatives, quinoxaline derivatives, metal complexes such as quinolinol complexes, phthalocyanine compounds, and distyrylpyrazine derivatives.

[0083] Alternatively, an electron-transporting organic material may be doped with an alkali metal or alkaline earth metal to form a metal-doped layer, which may serve as the electron injection / transport layer. Examples of electron-transporting organic materials include bathocuproine, bathophenanthroline, phenanthroline derivatives, triazole derivatives, oxadiazole derivatives, pyridine derivatives, and metal complexes such as tris(8-quinolinolato)aluminum (Alq3), as well as polymer derivatives thereof. Examples of metals to be doped include Li, Cs, Ba, and Sr.

[0084] The second electrode 140 includes a conductive material such as a metal. The second electrode 140 is formed on the conductive layer 130 by a vapor deposition method using a vapor deposition mask 20, which will be described later. Examples of materials that can be used to form the second electrode 140 include platinum, gold, silver, copper, iron, tin, chromium, aluminum, indium, lithium, sodium, potassium, calcium, magnesium, chromium, and carbon. These materials may be used alone or in combination of two or more. When two or more materials are used, layers made of each material may be stacked. Alternatively, an alloy containing two or more materials may be used. Examples include magnesium alloys such as MgAg, aluminum alloys such as AlLi, AlCa, and AlMg, and alloys of alkali metals and alkaline earth metals.

[0085] When electronic device 100 is an organic electroluminescent display, element 110 is a pixel and current-carrying layer 130 includes a light-emitting layer.

[0086] 1, a plurality of elements 110 corresponding to a plurality of electronic devices 100 may be provided on one substrate 91. When the electronic device 100 is a display device such as an organic EL display device, one electronic device 100 corresponds to one screen.

[0087] FIG. 2 is an enlarged cross-sectional view of the electronic device 100. FIG. 2 is a cross-sectional view taken along line II-II of the electronic device 100 shown in FIG. 6 (described later). In FIG. 2, the element 110 represents a portion where the first electrode 120 and the second electrode 140 overlap when viewed along the normal direction of the substrate 91 and where the current-carrying layer 130 is located between the first electrode 120 and the second electrode 140. As shown in FIG. 2, the second electrode 140 may be located not only in a region where it overlaps with the first electrode 120 when viewed along the normal direction of the substrate 91, but also in a region where it does not overlap with the first electrode 120. In the following description, the overlapping of two components when viewed along the normal direction of the surface of a plate-like member such as the substrate 91 or the deposition mask 20 may also be simply referred to as "overlapping."

[0088] The second electrode 140 in FIG. 2 will be described in detail. The second electrode 140 includes a first layer 140A and a second layer 140B. The first layer 140A is formed by a vapor deposition method using a first vapor deposition mask 20A, which will be described later. The first layer 140A includes a first electrode basic region 141A that overlaps the first electrode 120 and a first electrode extension region 142A that is located between two adjacent elements 110. The first electrode extension region 142A may or may not be connected to the first electrode basic region 141A. When the first electrode extension region 142A is not connected to the first electrode basic region 141A, the first electrode extension region 142A is electrically connected to the first electrode basic region 141A via the second layer 140B.

[0089] The second layer 140B is a layer formed by a vapor deposition method using a second vapor deposition mask 20B, which will be described later. As shown in FIG. 2, the second layer 140B overlaps the first electrode extension region 142A of the first layer 140A. By providing the second layer 140B, the thickness of the second electrode 140 located between two adjacent elements 110 increases. Therefore, the electrical resistance between the first electrode basic region 141A of the two adjacent elements 110 can be reduced compared to when the second layer 140B is not present.

[0090] In FIG. 2, symbol T1 denotes the minimum thickness of the portion of the second electrode 140 that constitutes the element 110, and symbol T2 denotes the maximum thickness of the portion of the second electrode 140 that is located between two adjacent elements 110. Thickness T2 is greater than thickness T1 by the thickness of the second layer 140B. Thickness T2 may be 1.2 times or more, 1.5 times or more, 1.8 times or more, 2.0 times or more, 2.2 times or more, or 2.5 times or more of thickness T1. This reduces the electrical resistance between the electrode first basic regions 141A of two adjacent elements 110. Furthermore, thickness T2 may be 5.0 times or less, 4.5 times or less, 4.0 times or less, 3.5 times or less, or 3.0 times or less of thickness T1.

[0091] The range of T2 / T1, which is the ratio of thickness T2 to thickness T1, may be defined by a first group consisting of 1.2, 1.5, 1.8, 2.0, 2.2, and 2.5, and / or a second group consisting of 3.0, 3.5, 4.0, 4.5, and 5.0. The range of T2 / T1 may be defined by a combination of any one of the values ​​included in the first group described above with any one of the values ​​included in the second group described above. The range of T2 / T1 may be defined by a combination of any two of the values ​​included in the first group described above. The range of T2 / T1 may be defined by a combination of any two of the values ​​included in the second group described above.For example, T2 / T1 may be 1.2 or more and 5.0 or less, 1.2 or more and 4.5 or less, 1.2 or more and 4.0 or less, 1.2 or more and 3.5 or less, 1.2 or more and 3.0 or less, 1.2 or more and 2.5 or less, 1.2 or more and 2.2 or less, 1.2 or more and 2.0 or less, 1.2 or more and 1.8 or less, 1.2 or more and 1.5 or less, 1.5 or more and 5.0 or less, 1.5 or more and 4.5 or less, 1.5 or more and 4.0 or less, or 1.5 or more and It may be 3.5 or less, may be 1.5 or more and 3.0 or less, may be 1.5 or more and 2.5 or less, may be 1.5 or more and 2.2 or less, may be 1.5 or more and 2.0 or less, may be 1.5 or more and 1.8 or less, may be 1.8 or more and 5.0 or less, may be 1.8 or more and 4.5 or less, may be 1.8 or more and 4.0 or less, may be 1.8 or more and 3.5 or less, may be 1.8 or more and 3.0 or less, may be 1.8 or more and 2.5 or less, may be 1.8 or more and 2.2 or less, may be 1.8 or more and 2.0 or less, or more and 5.0 or less, or may be 2.0 or more and 4.5 or less, or may be 2.0 or more and 4.0 or less, or may be 2.0 or more and 3.5 or less, or may be 2.0 or more and 3.0 or less, or may be 2.0 or more and 2.5 or less, or may be 2.0 or more and 2.2 or less, or may be 2.2 or more and 5.0 or less, or may be 2.2 or more and 4.5 or less, or may be 2.2 or more and 4.0 or less, or may be 2.2 or more and 3.5 or less, or may be 2.2 or more and 3.0 or less, or may be 2.2 or more and 2.5 or less, or may be 2.5 or more and 5.0 or less, It may be 0.5 or more and 4.5 or less, may be 2.5 or more and 4.0 or less, may be 2.5 or more and 3.5 or less, may be 2.5 or more and 3.0 or less, may be 3.0 or more and 5.0 or less, may be 3.0 or more and 4.5 or less, may be 3.0 or more and 4.0 or less, may be 3.0 or more and 3.5 or less, may be 3.5 or more and 5.0 or less, may be 3.5 or more and 4.5 or less, may be 3.5 or more and 4.0 or less, may be 4.0 or more and 5.0 or less, may be 4.0 or more and 4.5 or less, may be 4.5 or more and 5.0 or less.

[0092] The above-mentioned ranges regarding the ratio of thickness T2 to thickness T1 may be adopted in embodiments other than the embodiments shown in FIGS.

[0093] The thickness T1 may be 10 nm or more, 20 nm or more, 50 nm or more, 100 nm or more, or 200 nm or more. The thickness T1 may be 10 μm or less, 5 μm or less, 2 μm or less, 1 μm or less, or 500 nm or less.

[0094] The range of thickness T1 may be defined by a first group consisting of 10 nm, 20 nm, 50 nm, 100 nm, and 200 nm, and / or a second group consisting of 10 μm, 5 μm, 2 μm, 1 μm, and 500 nm. The range of thickness T1 may be defined by a combination of any one of the values ​​included in the first group described above with any one of the values ​​included in the second group described above. The range of thickness T1 may be defined by a combination of any two of the values ​​included in the first group described above. The range of thickness T1 may be defined by a combination of any two of the values ​​included in the second group described above.For example, the thickness T1 may be 10 nm or more and 10 μm or less, 10 nm or more and 5 μm or less, 10 nm or more and 2 μm or less, 10 nm or more and 1 μm or less, 10 nm or more and 500 nm or less, 10 nm or more and 200 nm or less, 10 nm or more and 100 nm or less, 10 nm or more and 50 nm or less, 10 nm or more and 20 nm or less, 20 nm or more and 10 μm or less, or 20 nm or more and 5 μm or less. Alternatively, it may be 20 nm or more and 2 μm or less, 20 nm or more and 1 μm or less, 20 nm or more and 500 nm or less, 20 nm or more and 200 nm or less, 20 nm or more and 100 nm or less, 20 nm or more and 50 nm or less, 50 nm or more and 10 μm or less, 50 nm or more and 5 μm or less, 50 nm or more and 2 μm or less, 50 nm or more and 1 μm or less, 50 nm or more and 500 nm or less, 50 nm or more and 2 μm or less, The thickness may be 00 nm or less, 50 nm or more and 100 nm or less, 100 nm or more and 10 μm or less, 100 nm or more and 5 μm or less, 100 nm or more and 2 μm or less, 100 nm or more and 1 μm or less, 100 nm or more and 500 nm or less, 100 nm or more and 200 nm or less, 200 nm or more and 10 μm or less, 200 nm or more and 5 μm or less, 200 nm or more and 2 μm or less, or 200 nm or more and The thickness may be at most 1 μm, at most 200 nm and at most 500 nm, at most 500 nm and at most 10 μm, at most 500 nm and at most 5 μm, at most 500 nm and at most 2 μm, at most 500 nm and at most 1 μm, at most 1 μm and at most 10 μm, at most 1 μm and at most 5 μm, at most 1 μm and at most 2 μm, at most 2 μm and at most 10 μm, at most 2 μm and at most 5 μm, or at most 5 μm and at most 10 μm.

[0095] The above-described ranges for the thickness T1 may be adopted in embodiments other than those shown in FIGS.

[0096] Next, an example of the configuration of each layer of the element 110 of the electronic device 100 when viewed along the normal direction of the substrate 91 will be described.

[0097] 3 is a plan view showing an example of a substrate 91 on which first electrodes 120 are formed. As shown in FIG. 3, the first electrodes 120 may have a stripe shape extending in a first direction D1. Alternatively, multiple first electrodes 120 may be arranged in a second direction D2 that intersects with the first direction D1. In the example shown in FIG. 3, the first direction D1 and the second direction D2 are directions in which the outer edge of the substrate 91 extends. The second direction D2 may be perpendicular to the first direction D1.

[0098] The substrate 91 may be formed with a plurality of terminal portions 125 arranged along the outer edge of the substrate 91, wiring 126 electrically connecting the terminal portions 125 and the first electrode 120, etc. The terminal portions 125 and wiring 126 may be formed on the substrate 91 using the same material as the first electrode 120 in the same process.

[0099] Furthermore, alignment marks 93 may be formed on the substrate 91. The alignment marks 93 are formed, for example, at the corners of the substrate 91. The alignment marks 93 may be used to align the substrate 91 in the process of forming each layer of the element 110 on the substrate 91. For example, the substrate 91 may be used to adjust the position of a deposition mask 20, which will be described later, relative to the substrate 91.

[0100] Fig. 4 is a plan view showing an example of a substrate 91 on which first electrodes 120 and current-carrying layers 130 have been formed. In the example shown in Fig. 4, the current-carrying layers 130 are formed so as to extend across a plurality of first electrodes 120. The current-carrying layers 130 shown in Fig. 4 may be formed, for example, by depositing an organic material onto the substrate 91 and the first electrodes 120 by a vapor deposition method using a vapor deposition mask having through-holes formed therein corresponding to the shape of the current-carrying layers 130.

[0101] Fig. 5 is a plan view showing an example of a substrate 91 on which the first electrode 120, the current-carrying layer 130, and the first layer 140A of the second electrode 140 are formed. As shown in Fig. 5, the first layer 140A may extend in the second direction D2. Alternatively, multiple first layers 140A may be arranged in the first direction D1.

[0102] 5, the first layer 140A may include a plurality of first electrode basic regions 141A aligned in the second direction D2 and a first electrode extension region 142A extending to connect two adjacent first electrode basic regions 141A in the second direction D2. The first electrode basic regions 141A are arranged to entirely or partially overlap the first electrode 120. In this case, when a voltage is applied between the first electrode 120 and the first electrode basic regions 141A of the second electrode 140, the current-carrying layer 130 located therebetween is driven. When the current-carrying layer 130 is a light-emitting layer, light is emitted from the current-carrying layer 130 and extracted to the outside from the second electrode 140 side or the first electrode 120 side.

[0103] 5, the substrate 91 may be formed with a plurality of terminal portions 145A arranged along the outer edge of the substrate 91, wiring 146A electrically connecting the terminal portions 145A and the first layer 140A of the second electrode 140, and the like. The terminal portions 145A and the wiring 146A may be formed on the substrate 91 using the same material as the first layer 140A of the second electrode 140 in the same process. That is, the terminal portions 145A and the wiring 146A may be formed simultaneously with the first layer 140A by a vapor deposition method using a first vapor deposition mask 20A. This can improve the positional accuracy of the terminal portions 145A and the wiring 146A relative to the first layer 140A.

[0104] As shown in FIG. 5, the dimension of the first electrode extension region 142A is smaller than the dimension of the first electrode basic region 141A in a direction perpendicular to the second direction D2, which is the direction in which two adjacent first electrode basic regions 141A are aligned. That is, the width of the first electrode extension region 142A is smaller than the width of the first electrode basic region 141A. In other words, the first layer 140A has a first dimension and a second dimension smaller than the first dimension in a direction perpendicular to the second direction D2. Regions having the first dimension and regions having the second dimension are alternately arranged in the second direction D2. This makes it easier for light to pass through the electronic device 100 in the region between two elements 110 adjacent in the second direction D2. This allows the transmittance of the entire electronic device 100 to be increased compared to, for example, a case in which the first electrode extension region 142A has the same width as the first electrode basic region 141A.

[0105] As will be described later, the electrode first basic region 141A is mainly composed of the deposition material that has passed through the mask first basic region 26A of the first deposition mask 20A. The electrode first extended region 142A is mainly composed of the deposition material that has passed through the mask first extended region 27A of the first deposition mask 20A. Therefore, the dimensions of the electrode first basic region 141A correspond to the dimensions of the mask first basic region 26A, and the dimensions of the electrode first extended region 142A correspond to the dimensions of the mask first extended region 27A. For example, the ratio of the width of the electrode first extended region 142A to the width of the electrode first basic region 141A corresponds to the ratio of the dimension W12 of the mask first extended region 27A to the dimension W11 of the mask first basic region 26A, which will be described later.

[0106] However, if the width of the electrode first extended region 142A is made smaller than the width of the electrode first basic region 141A, the electrical resistance between two adjacent electrode first basic regions 141A increases. In consideration of this point, in this embodiment, the above-mentioned second layer 140B is formed on the electrode first extended region 142A.

[0107] 6 is a plan view showing an example of a substrate 91 on which the first electrode 120, the conductive layer 130, the first layer 140A of the second electrode 140, and the second layer 140B of the second electrode 140 are formed. As shown in FIG. 6, the second layer 140B entirely or partially overlaps the first electrode extension region 142A located between two adjacent first electrode basic regions 141A in the second direction D2. This reduces the electrical resistance between the two adjacent first electrode basic regions 141A. The second layer 140B may also partially overlap the two adjacent first electrode basic regions 141A in the second direction D2.

[0108] The terminal portion 145A and the wiring 146A may be formed simultaneously with the second layer 140B by a vapor deposition method using the second vapor deposition mask 20B. This can improve the positional accuracy of the terminal portion 145A and the wiring 146A relative to the second layer 140B. The terminal portion 145A and the wiring 146A may include a layer formed by a vapor deposition method using the second vapor deposition mask 20B, in addition to a layer formed by a vapor deposition method using the first vapor deposition mask 20A.

[0109] Next, a method for forming the second electrode 140 of the electronic device 100 by vapor deposition will be described. Fig. 7 is a diagram showing a vapor deposition apparatus 80 for carrying out a vapor deposition process in which a vapor deposition material is deposited on a target object.

[0110] As shown in FIG. 7 , a vapor deposition apparatus 80 may include therein a vapor deposition source 81, a heater 83, and a vapor deposition mask device 10. The vapor deposition apparatus 80 may further include an exhaust unit for creating a vacuum atmosphere inside the vapor deposition apparatus 80. The vapor deposition source 81 is, for example, a crucible, and contains a vapor deposition material 82 such as an organic light-emitting material. The heater 83 heats the vapor deposition source 81 to evaporate the vapor deposition material 82 under a vacuum atmosphere. The vapor deposition mask device 10 is disposed opposite the vapor deposition source 81.

[0111] 7, the deposition mask apparatus 10 includes at least one deposition mask 20. The deposition mask apparatus 10 may further include a frame 15 that supports the deposition mask 20. The frame 15 may support the deposition mask 20 while applying tension to the deposition mask 20 so as to prevent the deposition mask 20 from bending.

[0112] The deposition mask 20 of the deposition mask device 10 may be a first deposition mask 20A, a second deposition mask 20B, a third deposition mask 20C, etc., which will be described later. In the following description, when describing the configuration of the deposition mask common to the first deposition mask 20A, the second deposition mask 20B, the third deposition mask 20C, etc., the term "deposition mask 20" and reference symbols are used. Similarly, when describing the components of the deposition mask 20, such as the effective area, that are common to the first deposition mask 20A, the second deposition mask 20B, the third deposition mask 20C, etc., reference symbols consisting of only a number without an alphabet, such as "22," are used. On the other hand, when describing the specific features of the first deposition mask 20A, the second deposition mask 20B, and the third deposition mask 20C, reference symbols consisting of a number followed by the corresponding alphabet, such as "A," "B," or "C."

[0113] 7 , the deposition mask device 10 is placed in a deposition device 80 so that the deposition mask 20 faces a substrate 91, which is an object to which a deposition material 82 is to be attached. The deposition mask 20 has a plurality of through holes 25 that allow the deposition material 82 flying from the deposition source 81 to pass through. In the following description, of the surfaces of the deposition mask 20, the surface located on the side of the substrate 91 to which the flying deposition material 82 is to be attached will be referred to as a first surface 201, and the surface located opposite the first surface 201 will be referred to as a second surface 202.

[0114] 7, the deposition mask device 10 may include a magnet 85 arranged on the surface of the substrate 91 opposite to the deposition mask 20. By providing the magnet 85, the deposition mask 20 can be attracted to the magnet 85 by magnetic force, and the deposition mask 20 can be brought into close contact with the substrate 91. This makes it possible to suppress the generation of shadows in the deposition process and to improve the dimensional accuracy and positional accuracy of the deposition layer formed on the substrate 91 by the deposition material 82 adhering to the substrate 91. Alternatively, the deposition mask 20 may be brought into close contact with the substrate 91 using an electrostatic chuck that utilizes electrostatic force.

[0115] FIG. 8 is a plan view showing the deposition mask device 10 as viewed from the first surface 201 side of the deposition mask 20. As shown in FIG. 8, the deposition mask device 10 may include multiple deposition masks 20. In this embodiment, each deposition mask 20 has a rectangular shape extending in one direction, such as the first direction D1. In the deposition mask device 10, the multiple deposition masks 20 are arranged in a width direction intersecting the longitudinal direction of the deposition mask 20. Each deposition mask 20 is fixed to a frame 15 at both ends in the longitudinal direction of the deposition mask 20 by, for example, welding. Although not shown, the deposition mask device 10 may also include a member fixed to the frame 15 and partially overlapping the deposition mask 20 in the thickness direction of the deposition mask 20. Examples of such a member include a member extending in a direction intersecting the longitudinal direction of the deposition mask 20 and supporting the deposition mask 20, and a member overlapping a gap between two adjacent deposition masks.

[0116] The deposition mask 20 shown in FIG. 8 has a pair of ears 17 fixed to a frame 15 by welding or the like, and an intermediate portion 18 located between the ears 17. The intermediate portion 18 may have at least one effective area 22 and a peripheral area 23 located around the effective area 22. In the example shown in FIG. 8, the intermediate portion 18 includes a plurality of effective areas 22 arranged at predetermined intervals along the length direction of the deposition mask 20. The peripheral area 23 surrounds the plurality of effective areas 22.

[0117] When a display device such as an organic EL display device is produced using the deposition mask 20, one effective area 22 may correspond to a display area of ​​one organic EL display device, i.e., one screen. Note that one effective area 22 may correspond to multiple display areas. Although not shown, multiple effective areas 22 may also be arranged at predetermined intervals in the width direction of the deposition mask 20.

[0118] The effective area 22 may have, for example, a substantially quadrangular shape in plan view, or more precisely, a substantially rectangular shape in plan view. Although not shown, each effective area 22 may have a contour of various shapes depending on the shape of the display area of ​​the organic EL display device. For example, each effective area 22 may have a circular contour.

[0119] 9 is an enlarged plan view showing a portion of a first deposition mask device 10A including a first deposition mask 20A used when forming the first layer 140A of the second electrode 140. The first deposition mask 20A has a plurality of first through-holes 25A including regions arranged along two different directions. In the example shown in FIG. 9, the two different directions are a first direction D1 and a second direction D2.

[0120] 10 is an enlarged plan view showing a portion of a second deposition mask device 10B including a second deposition mask 20B used when forming the second layer 140B of the second electrode 140. The second deposition mask 20B has a plurality of second through holes 25B arranged along two different directions. In the example shown in FIG. 10, the two different directions are a first direction D1 and a second direction D2.

[0121] The second deposition mask device 10B is used, for example, to form a first layer 140A of the second electrode 140 on a substrate 91 using the first deposition mask device 10A in the deposition device 80, and then to form a second layer 140B of the second electrode 140 on the substrate 91 in the deposition device 80. Thus, in the process of manufacturing the electronic device 100, multiple deposition masks 20, such as the first deposition mask 20A and the second deposition mask 20B, are used in sequence. A group of multiple deposition masks 20 used to manufacture the electronic device 100 is also referred to as a "deposition mask group."

[0122] 11 is a diagram showing an example of the cross-sectional structure of a deposition mask 20, such as a first deposition mask 20A, a second deposition mask 20B, or a third deposition mask 20C. The deposition mask 20 has a plurality of through holes 25 formed in a metal plate 50. The through holes 25 penetrate the metal plate 50 from a first surface 201 to a second surface 202.

[0123] 11 may be formed by etching the metal plate 50 from the first surface 201 side and the second surface 202 side. The wall surfaces of the through hole 25 include a first wall surface 31 located on the first surface 201 side and a second wall surface 36 located on the second surface 202 side. The first wall surface 31 is the surface of a first recess 30 formed when the metal plate 50 is etched from the first surface 201 side. The second wall surface 36 is the surface of a second recess 35 formed when the metal plate 50 is etched from the second surface 202 side. The first wall surface 31 of the first recess 30 and the second wall surface 36 of the second recess 35 are connected at a connection portion 42.

[0124] In the vapor deposition method using the vapor deposition mask 20, the vapor deposition material 82 that passes through the through-holes 25 from the second surface 202 side to the first surface 201 side is attached to the substrate 91, thereby forming layers such as the first layer 140A and the second layer 140B on the substrate 91. The outline of the layer formed on the substrate 91 in the in-plane direction of the substrate 91 is determined by the outline of the end 251 of the through-hole 25 on the first surface 201. The outline of the through-hole 25 shown in the plan views of Figures 12 to 16 described later is the outline of the end 251 of the through-hole 25.

[0125] The thickness T of the deposition mask 20 is preferably 100 μm or less. The thickness T of the deposition mask 20 may be 50 μm or less, 40 μm or less, 35 μm or less, 30 μm or less, 25 μm or less, or 20 μm or less. On the other hand, if the thickness of the deposition mask 20 is too small, the strength of the deposition mask 20 decreases, and the deposition mask 20 becomes more susceptible to damage or deformation. In consideration of this, the thickness T of the deposition mask 20 is preferably 5 μm or more. The thickness T of the deposition mask 20 may be 8 μm or more, 10 μm or more, 12 μm or more, 13 μm or more, or 15 μm or more.

[0126] The range of thickness T of the deposition mask 20 may be defined by a first group consisting of 5 μm, 8 μm, 10 μm, 12 μm, 13 μm, and 15 μm, and / or a second group consisting of 100 μm, 50 μm, 40 μm, 35 μm, 30 μm, 25 μm, and 20 μm. The range of thickness T may be defined by a combination of any one of the values ​​included in the first group and any one of the values ​​included in the second group. The range of thickness T may be defined by a combination of any two of the values ​​included in the first group. The range of thickness T may be defined by a combination of any two of the values ​​included in the second group. For example, the thickness T of the deposition mask 20 may be in the range of 5 μm or more and 100 μm or less, 5 μm or more and 50 μm or less, 5 μm or more and 40 μm or less, 5 μm or more and 35 μm or less, 5 μm or more and 30 μm or less, 5 μm or more and 25 μm or less, 5 μm or more and 20 μm or less, 5 μm or more and 15 μm or less, 5 μm or more and 13 μm or less, 5 μm or more and 12 μm or less, 5 μm or more and 10 μm or less, 5 μm or more and 8 μm or less, 8 μm or more and 100 μm or less, 8 μm or more and 50 μm or less, 8 μm or more and 40 μm or less, 8 μm or more and 35 μm or less, 8 μm or more and 30 μm or less, or 8 μm or more and 2 It may be 5 μm or less, may be 8 μm or more and 20 μm or less, may be 8 μm or more and 15 μm or less, may be 8 μm or more and 13 μm or less, may be 8 μm or more and 12 μm or less, may be 8 μm or more and 10 μm or less, may be 10 μm or more and 100 μm or less, may be 10 μm or more and 50 μm or less, may be 10 μm or more and 40 μm or less, may be 10 μm or more and 35 μm or less, may be 10 μm or more and 30 μm or less, may be 10 μm or more and 25 μm or less, may be 10 μm or more and 20 μm or less, may be 10 μm or more and 15 μm or less, may be 10 μm or more and 13 μm or less, may be 10 μm or more and 12 μm or less, may be 12 μm or more and 100 μm or less, may be 12 μm or more and 50 μm or less,It may be 12 μm or more and 40 μm or less, 12 μm or more and 35 μm or less, 12 μm or more and 30 μm or less, 12 μm or more and 25 μm or less, 12 μm or more and 20 μm or less, 12 μm or more and 15 μm or less, 12 μm or more and 13 μm or less, 13 μm or more and 100 μm or less, 13 μm or more and 50 μm or less, 13 μm or more and 40 μm or less, or 13 μm or more and 35 μm or less. or may be 13 μm or more and 30 μm or less, or may be 13 μm or more and 25 μm or less, or may be 13 μm or more and 20 μm or less, or may be 13 μm or more and 15 μm or less, or may be 15 μm or more and 100 μm or less, or may be 15 μm or more and 50 μm or less, or may be 15 μm or more and 40 μm or less, or may be 15 μm or more and 35 μm or less, or may be 15 μm or more and 30 μm or less, or may be 15 μm or more and 25 μm or less, or 15 μm or more and 20 μm or less The thickness may be 20 μm or more and 100 μm or less, 20 μm or more and 50 μm or less, 20 μm or more and 40 μm or less, 20 μm or more and 35 μm or less, 20 μm or more and 30 μm or less, 20 μm or more and 25 μm or less, 25 μm or more and 100 μm or less, 25 μm or more and 50 μm or less, 25 μm or more and 40 μm or less, 25 μm or more and 35 μm or less, 25 μm or more and 3 It may be 0 μm or less, 30 μm or more and 100 μm or less, 30 μm or more and 50 μm or less, 30 μm or more and 40 μm or less, 30 μm or more and 35 μm or less, 35 μm or more and 100 μm or less, 35 μm or more and 50 μm or less, 35 μm or more and 40 μm or less, 40 μm or more and 100 μm or less, 40 μm or more and 50 μm or less, or 50 μm or more and 100 μm or less. The thickness T of the deposition mask 20 is the thickness of the peripheral region 23, that is, the thickness of the portion of the deposition mask 20 where the through-holes 25 are not formed.

[0127] The above-described ranges for the thickness T of the deposition mask 20 may be adopted in embodiments other than the embodiments shown in FIGS.

[0128] A contact-type measurement method can be adopted as a method for measuring the thickness of the deposition mask 20. For the contact-type measurement method, a length gauge "MT1271" by HEIDENHAIM-METRO, manufactured by Heidenhain, equipped with a ball bush guide type plunger, can be used.

[0129] The cross-sectional shape of the through holes 25 in the deposition mask 20 is not limited to the shape shown in Fig. 11. The method for forming the through holes 25 in the deposition mask 20 is not limited to etching, and various methods can be used. For example, the deposition mask 20 may be formed by plating so as to create the through holes 25.

[0130] The deposition mask 20 can be made of, for example, an iron alloy containing nickel. The iron alloy may further contain cobalt in addition to nickel. For example, the deposition mask 20 can be made of an iron alloy containing 30% to 54% by mass of nickel and cobalt in total and 0% to 6% by mass of cobalt. Specific examples of iron alloys containing nickel or nickel and cobalt include Invar material containing 34% to 38% by mass of nickel, Super Invar material containing 30% to 34% by mass of nickel and cobalt, and low-thermal expansion Fe-Ni-based plating alloys containing 38% to 54% by mass of nickel. Using such iron alloys can reduce the thermal expansion coefficient of the deposition mask 20. For example, when a glass substrate is used as the substrate 91, the deposition mask 20 can have a low thermal expansion coefficient comparable to that of a glass substrate. This makes it possible to prevent the dimensional accuracy and positional accuracy of the deposition layer formed on the substrate 91 from being reduced due to the difference in thermal expansion coefficient between the deposition mask 20 and the substrate 91 during the deposition process.

[0131] The above-described ranges regarding the composition of the material that constitutes the deposition mask 20 may be adopted in embodiments other than the embodiments shown in FIGS.

[0132] Next, the first deposition mask 20A will be described in detail. Fig. 12 is a plan view showing an example of the first deposition mask 20A when viewed from the first surface 201 side. Fig. 13 is an enlarged plan view showing a part of the first deposition mask 20A in Fig. 12.

[0133] 12, the first vapor deposition mask 20A has a plurality of first through holes 25A including regions arranged along two different directions. The plurality of first through holes 25A includes a plurality of mask first basic regions 26A arranged along two different directions and a mask first extended region 27A extending to connect two adjacent mask first basic regions 26A.

[0134] The mask first fundamental region 26A is a region through which the evaporation material constituting the electrode first fundamental region 141A of the first layer 140A of the second electrode 140 described above mainly passes. In the example shown in Fig. 12, the multiple mask first fundamental regions 26A are arranged along a first direction D1 and a second direction D2. As shown in Fig. 12, the distance between two adjacent mask first fundamental regions 26A in the second direction D2 is smaller than the distance between two adjacent mask first fundamental regions 26A in the first direction D1.

[0135] The mask first extended region 27A is a region through which the evaporation material constituting the above-described electrode first extended region 142A of the first layer 140A of the second electrode 140 mainly passes. In the example shown in Fig. 12, the mask first extended region 27A extends in the second direction D2 so as to connect two mask first basic regions 26A adjacent to each other in the second direction D2.

[0136] The mask first extended region 27A has a smaller dimension than the mask first fundamental region 26A in a direction perpendicular to the direction in which two adjacent mask first fundamental regions 26A are arranged. In the example shown in Fig. 13, the mask first extended region 27A has a smaller dimension than the mask first fundamental region 26A in a first direction D1 perpendicular to the second direction D2 in which two adjacent mask first fundamental regions 26A are arranged in the second direction D2. In other words, the first through-hole 25A has a first dimension W11 and a second dimension W12 smaller than the first dimension W11 in the first direction D1 perpendicular to the second direction D2. Regions having the first dimension W11 and regions having the second dimension W12 are alternately arranged in the second direction D2. In the first direction D1, the dimension W12 of the mask first extended region 27A may be 0.9 times or less, 0.8 times or less, 0.7 times or less, 0.6 times or less, or 0.5 times or less the dimension W11 of the mask first fundamental region 26A. This makes it easier for light to pass through the electronic device 100 in the region between the two first electrode fundamental regions 141A of the second electrode 140 formed corresponding to the mask first fundamental region 26A. In addition, in the first direction D1, the dimension W12 of the mask first extended region 27A may be 0.05 times or more, 0.1 times or more, 0.2 times or more, 0.3 times or more, or 0.4 times or more the dimension W11 of the mask first fundamental region 26A.

[0137] The range of W12 / W11, which is the ratio of dimension W12 to dimension W11, may be defined by a first group consisting of 0.05, 0.1, 0.2, 0.3, and 0.4, and / or a second group consisting of 0.9, 0.8, 0.7, 0.6, and 0.5. The range of W12 / W11 may be defined by a combination of any one of the values ​​included in the first group described above with any one of the values ​​included in the second group described above.For example, W12 / W11 may be 0.05 or more and 0.9 or less, 0.05 or more and 0.8 or less, 0.05 or more and 0.7 or less, 0.05 or more and 0.6 or less, 0.05 or more and 0.5 or less, 0.05 or more and 0.4 or less, 0.05 or more and 0.3 or less, 0.05 or more and 0.2 or less, 0.05 or more and 0.1 or less, 0.1 or more and 0.9 or less, or 0.1 or more and 0.2 or less. It may be 0.8 or less, may be 0.1 or more and 0.7 or less, may be 0.1 or more and 0.6 or less, may be 0.1 or more and 0.5 or less, may be 0.1 or more and 0.4 or less, may be 0.1 or more and 0.3 or less, may be 0.1 or more and 0.2 or less, may be 0.2 or more and 0.9 or less, may be 0.2 or more and 0.8 or less, may be 0.2 or more and 0.7 or less, may be 0.2 or more and 0.6 or less, or may be 0.2 or more and 0.5 or less. Alternatively, it may be 0.2 or more and 0.4 or less, 0.2 or more and 0.3 or less, 0.3 or more and 0.9 or less, 0.3 or more and 0.8 or less, 0.3 or more and 0.7 or less, 0.3 or more and 0.6 or less, 0.3 or more and 0.5 or less, 0.3 or more and 0.4 or less, 0.4 or more and 0.9 or less, 0.4 or more and 0.8 or less, 0.4 or more and 0.7 or less, or 0.4 or more and 0.6 or less, may be 0.4 or more and 0.5 or less, may be 0.5 or more and 0.9 or less, may be 0.5 or more and 0.8 or less, may be 0.5 or more and 0.7 or less, may be 0.5 or more and 0.6 or less, may be 0.6 or more and 0.9 or less, may be 0.6 or more and 0.8 or less, may be 0.6 or more and 0.7 or less, may be 0.7 or more and 0.9 or less, may be 0.7 or more and 0.8 or less, may be 0.8 or more and 0.9 or less.

[0138] 12, the first deposition mask 20A may have alignment marks 29A. The alignment marks 29A are formed, for example, at corners of an effective area 22A of the first deposition mask 20A. The alignment marks 29A may be used to align the first deposition mask 20A with respect to the substrate 91 in the step of forming the first layer 140A of the second electrode 140 on the substrate 91 by deposition using the first deposition mask 20A.

[0139] Next, the second deposition mask 20B will be described in detail. Fig. 14 is a plan view showing an example of the second deposition mask 20B when viewed from the first surface 201 side. Fig. 15 is an enlarged plan view showing a part of the second deposition mask 20B in Fig. 14.

[0140] 14 and 15, the second vapor deposition mask 20B has a plurality of second through holes 25B arranged along two different directions. The second through holes 25B are regions through which the vapor deposition material constituting the second layer 140B of the second electrode 140 mainly passes. In the example shown in FIG. 12, the second through holes 25B extend in the second direction D2.

[0141] 15, the symbol W21 represents the dimension of the second through hole 25B in the first direction D1 orthogonal to the second direction D2 in which the second through hole 25B extends. In the first direction D1, the dimension W21 of the second through hole 25B is smaller than the dimension W11 of the mask first basic region 26A of the first through hole 25A in the first vapor deposition mask 20A described above. The range of the ratio of the dimension W21 of the second through hole 25B to the dimension W11 of the mask first basic region 26A is the same as the above-described range of the ratio of the dimension W12 of the mask first extended region 27A to the dimension W11 of the mask first basic region 26A, and therefore detailed description thereof will be omitted.

[0142] In the first direction D1, the dimension W21 of the second through hole 25B may be smaller than, larger than, or the same as the dimension W12 of the mask first extended region 27A of the first vapor deposition mask 20A described above.

[0143] 14, the second deposition mask 20B may have alignment marks 29B. As with the first deposition mask 20A, the alignment marks 29B are formed, for example, at corners of the effective area 22B of the second deposition mask 20B. The alignment marks 29B may be used to align the second deposition mask 20B with respect to the substrate 91 in the step of forming the second layer 140B of the second electrode 140 on the substrate 91 by deposition using the second deposition mask 20B.

[0144] Next, an example of a method for manufacturing the electronic device 100 will be described.

[0145] 3, a substrate 91 on which a first electrode 120 is formed is prepared. The first electrode 120 is formed, for example, by forming a conductive layer constituting the first electrode 120 on the substrate 91 by a sputtering method or the like, and then patterning the conductive layer by a photolithography method or the like.

[0146] 4, the current-carrying layer 130 is formed on the first electrode 120. The current-carrying layer 130 is formed, for example, by depositing an organic material or the like onto the substrate 91 and the first electrode 120 by a vapor deposition method using a vapor deposition mask having through-holes corresponding to the current-carrying layer 130.

[0147] Next, a second electrode formation step is performed to form a second electrode 140 on the current-carrying layer 130. For example, as shown in Fig. 5, a first layer 140A of the second electrode 140 is formed on the current-carrying layer 130. Specifically, the first layer 140A is formed by depositing a conductive material such as a metal onto the current-carrying layer 130 by a vapor deposition method using a first vapor deposition mask device 10A equipped with a first vapor deposition mask 20A.

[0148] 6, the second layer 140B of the second electrode 140 is formed on the current-carrying layer 130 and the first layer 140A of the second electrode 140. Specifically, the second layer 140B is formed by depositing a conductive material such as a metal onto the current-carrying layer 130 and the first layer 140A by a vapor deposition method using a second vapor deposition mask device 10B including a second vapor deposition mask 20B. In this manner, the electronic device 100 including the first electrode 120, the current-carrying layer 130, and the first and second layers 140A and 140B of the second electrode 140 formed on the substrate 91 can be obtained.

[0149] An effect that can be achieved by forming the second electrode 140 using a deposition mask group including a first deposition mask 20A and a second deposition mask 20B will be described with reference to FIG. 16 . FIG. 16 is a diagram showing a stack 21 obtained by stacking the first deposition mask 20A and the second deposition mask 20B. In the stack 21, the first deposition mask 20A and the second deposition mask 20B may be stacked such that the first alignment mark 29A of the first deposition mask 20A and the second alignment mark 29B of the second deposition mask 20B overlap. In this case, tension may or may not be applied to the first deposition mask 20A and the second deposition mask 20B.

[0150] 16 , which shows a state in which multiple deposition masks 20, such as the first deposition mask 20A and the second deposition mask 20B, are stacked, may be obtained by superimposing image data of each deposition mask 20. For example, first, an imaging device is used to acquire image data relating to the outlines of the first through holes 25A in the first deposition mask 20A and the outlines of the second through holes 25B in the second deposition mask 20B, and then an image processing device is used to superimpose the image data of the first deposition mask 20A and the image data of the second deposition mask 20B, thereby producing a diagram such as that shown in FIG. 16 . The same applies to the case in which the first deposition mask 20A, the second deposition mask 20B, and the third deposition mask 20C, which will be described later, are stacked.

[0151] 16, the first through holes 25A of the first deposition mask 20A are indicated by dotted lines, and the second through holes 25B of the second deposition mask 20B are indicated by solid lines. As shown in FIG. 16, when the first deposition mask 20A and the second deposition mask 20B are superimposed, the first through holes 25A of the first deposition mask 20A and the second through holes 25B of the second deposition mask 20B partially overlap. This means that the first layer 140A of the second electrode 140, which is formed on the substrate 91 by the deposition material that has passed through the first through holes 25A, partially overlaps with the second layer 140B of the second electrode 140, which is formed on the substrate 91 by the deposition material that has passed through the second through holes 25B. Therefore, the electrical resistance of the second electrode 140 can be reduced compared to when the second electrode 140 is formed only by the first layer 140A.

[0152] The overlap between the first through holes 25A of the first deposition mask 20A and the second through holes 25B of the second deposition mask 20B will be described in detail. As shown in FIG. 16 , when the first deposition mask 20A and the second deposition mask 20B are overlapped, the first mask extended region 27A of the first deposition mask 20A and the second through holes 25B of the second deposition mask 20B overlap entirely or partially. As described above, the deposition material that passes through the first mask extended region 27A of the first deposition mask 20A and adheres to the substrate 91 forms the first electrode extended region 142A that connects the first electrode basic regions 141A of the second electrodes 140 of two adjacent elements 110. The overlap between the first mask extended region 27A of the first deposition mask 20A and the second through holes 25B of the second deposition mask 20B allows the second layer 140B to be formed on the first electrode extended region 142A of the second electrode 140. That is, the second layer 140B can overlap the electrode first extension region 142A. This allows the electrical resistance between the electrode first basic regions 141A of two adjacent elements 110 to be reduced even if the dimensions of the electrode first extension region 142A and the second layer 140B are smaller than the dimensions of the electrode first basic region 141A. Furthermore, by making the dimensions of the electrode first extension region 142A and the second layer 140B smaller than the dimensions of the electrode first basic region 141A, light can be more easily transmitted through the electronic device 100 in the region between two adjacent elements 110 in the second direction D2. This allows the transmittance of the entire electronic device 100 to be increased.

[0153] Extending space between two and two masks, vapor deposition and space-filling mask, and stent-space, 1 1 nd Dan In this case, the second layer 140B formed corresponding to the second through-hole 25B can overlap the electrode first basic region 141A formed corresponding to the mask first basic region 26A.

[0154] Next, other examples of forming the second electrode 140 of the electronic device 100 using the deposition mask group will be described with reference to FIGS. 17 to 25. Here, an example will be described in which the deposition mask group includes a first deposition mask 20A, a second deposition mask 20B, and a third deposition mask 20C, and the current-carrying layer 130 includes a first current-carrying layer 130A, a second current-carrying layer 130B, and a third current-carrying layer 130C. The first current-carrying layer 130A, the second current-carrying layer 130B, and the third current-carrying layer 130C are, for example, a red light-emitting layer, a blue light-emitting layer, and a green light-emitting layer.

[0155] The two or more current-carrying layers 130 may be arranged along two different directions in the plane of the substrate 91. FIG. 17 is an enlarged view of a portion of the substrate 91 on which the first current-carrying layer 130A, the second current-carrying layer 130B, and the third current-carrying layer 130C are formed. The two or more first current-carrying layers 130A may be arranged along two different directions in the plane of the substrate 91. The same applies to the second current-carrying layer 130B and the third current-carrying layer 130C. Although not shown, a first electrode 120 is formed between the substrate 91 and the first current-carrying layer 130A, the second current-carrying layer 130B, and the third current-carrying layer 130C. In the example shown in FIG. 17, the multiple first current-carrying layers 130A are arranged along a third direction D3 and a fourth direction D4 that intersects with the third direction D3. The third direction D3 may be at an angle of 45° with respect to the first direction D1. The fourth direction D4 may be at an angle of 45° with respect to the second direction D2. Similar to the first current carrying layers 130A, the second current carrying layers 130B are also arranged along the third direction D3 and the fourth direction D4 intersecting the third direction D3. The third current carrying layers 130C are arranged along the first direction D1 and the second direction D2.

[0156] Fig. 18 is a plan view showing the substrate 91 in a state where the second electrode 140 has been formed on the first current-carrying layer 130A, the second current-carrying layer 130B, and the third current-carrying layer 130C shown in Fig. 17. Fig. 19 is a cross-sectional view of the electronic device 100 of Fig. 18 taken along line XIX-XIX. Fig. 20 is a cross-sectional view of the electronic device 100 of Fig. 18 taken along line XX-XX. Fig. 21 is a cross-sectional view of the electronic device 100 of Fig. 18 taken along line XXI-XXI. As shown in Fig. 18, the electronic device 100 includes a non-electrode region 150 where the second electrode 140 is not provided.

[0157] As shown in FIGS. 19 and 21 , the second electrode 140 has a first layer 140A, a second layer 140B, and a third layer 140C. The first layer 140A is a layer formed by a vapor deposition method using a first vapor deposition mask 20A. The first layer 140A may be arranged along two different directions in the in-plane direction of the substrate 91. The second layer 140B is a layer formed by a vapor deposition method using a second vapor deposition mask 20B. The second layer 140B may be arranged along two different directions in the in-plane direction of the substrate 91. The third layer 140C is a layer formed by a vapor deposition method using a third vapor deposition mask 20C. The third layer 140C may be arranged along two different directions in the in-plane direction of the substrate 91.

[0158] The first layer 140A has at least a first electrode fundamental region 141A overlapping the first electrode 120 and the first current-carrying layer 130A. The first electrode 120, the first current-carrying layer 130A, and the first electrode fundamental region 141A constitute a first element 110A of the electronic device 100. The second layer 140B has at least a second electrode fundamental region 141B overlapping the first electrode 120 and the second current-carrying layer 130B. The first electrode 120, the second current-carrying layer 130B, and the second electrode fundamental region 141B constitute a second element 110B of the electronic device 100. The third layer 140C has at least a third electrode fundamental region 141C overlapping the first electrode 120 and the third current-carrying layer 130C. The first electrode 120, the third current-carrying layer 130C, and the electrode third basic region 141C constitute a third element 110C of the electronic device 100.

[0159] 20, the first layer 140A may include an electrode first extension region 142A extending from the electrode first basic region 141A so as to electrically connect the electrode first basic region 141A of the first layer 140A and the electrode third basic region 141C of the third layer 140C. The electrode first extension region 142A may partially overlap the electrode third basic region 141C. The electrode first extension region 142A has a smaller dimension than the electrode first basic region 141A and the electrode third basic region 141C in a direction perpendicular to the direction in which the electrode first extension region 142A extends from the electrode first basic region 141A.

[0160] Although not shown, the second layer 140B may also include, similar to the first layer 140A, a second electrode extension region extending from the second electrode basic region 141B so as to electrically connect the second electrode basic region 141B of the second layer 140B with the third electrode basic region 141C of the third layer 140C. The second electrode extension region may partially overlap the third electrode basic region 141C. The second electrode extension region has a smaller dimension than the second electrode basic region 141B and the third electrode basic region 141C in a direction perpendicular to the direction in which the second electrode extension region extends from the second electrode basic region 141B.

[0161] 20 and 21, the third layer 140C may include an electrode third extension region 142C extending from the electrode third basic region 141C so as to electrically connect the electrode third basic region 141C of the third layer 140C to the electrode first basic region 141A of the first layer 140A. The electrode third extension region 142C may partially overlap the electrode first basic region 141A. The electrode third extension region 142C has a smaller dimension than the electrode first basic region 141A and the electrode third basic region 141C in a direction perpendicular to the direction in which the electrode third extension region 142C extends from the electrode third basic region 141C.

[0162] Although not shown, the third layer 140C may include an electrode third extension region extending from the electrode third basic region 141C so as to electrically connect the electrode third basic region 141C of the third layer 140C and the electrode second basic region 141B of the second layer 140B. The electrode third extension region may partially overlap the electrode second basic region 141B. Similar to the above-described electrode third extension region 142C, this electrode third extension region also has dimensions smaller than the electrode second basic region 141B and the electrode third basic region 141C in a direction perpendicular to the direction in which the electrode third extension region extends from the electrode third basic region 141C.

[0163] 21, the first layer 140A may include an electrode first auxiliary region 143A extending to electrically connect the electrode second basic region 141B of the second layer 140B and the electrode third basic region 141C of the third layer 140C. The electrode first auxiliary region 143A may partially overlap the electrode second basic region 141B and the electrode third basic region 141C. The electrode first auxiliary region 143A may not be connected to the electrode first basic region 141A and the electrode first extended region 142A. The electrode first auxiliary region 143A has a smaller dimension than the electrode second basic region 141B and the electrode third basic region 141C in a direction perpendicular to the direction in which the electrode first auxiliary region 143A extends.

[0164] Although not shown, the second layer 140B may also include an electrode second auxiliary region extending to electrically connect the electrode first basic region 141A of the first layer 140A and the electrode third basic region 141C of the third layer 140C, similar to the first layer 140A. The electrode second auxiliary region may partially overlap the electrode first basic region 141A and the electrode third basic region 141C. The electrode second auxiliary region may not be connected to the electrode second basic region 141B and the electrode second extended region 142B. The electrode second auxiliary region has a smaller dimension than the electrode first basic region 141A and the electrode third basic region 141C in a direction perpendicular to the direction in which the electrode second auxiliary region extends.

[0165] Next, the first deposition mask 20A, the second deposition mask 20B, and the third deposition mask 20C used to form the first layer 140A, the second layer 140B, and the third layer 140C of the second electrode 140 described above will be described.

[0166] 22 is a plan view showing the first vapor deposition mask 20A as viewed from the first surface 201 side. As shown in FIG. 22, the first vapor deposition mask 20A has a plurality of first through holes 25A including regions arranged along two different directions. The plurality of first through holes 25A includes at least a plurality of first mask basic regions 26A arranged along two different directions. The plurality of first through holes 25A may include a plurality of first mask extended regions 27A arranged along two different directions. Furthermore, the plurality of first through holes 25A may include a plurality of first mask auxiliary regions 28A arranged along two different directions.

[0167] The mask first basic region 26A is a region through which the evaporation material constituting the electrode first basic region 141A of the first layer 140A of the above-described second electrode 140 mainly passes. In the example shown in Fig. 22, the multiple mask first basic regions 26A are arranged along the third direction D3 and the fourth direction D4.

[0168] The mask first extended region 27A is a region through which the evaporation material constituting the above-described electrode first extended region 142A of the first layer 140A of the second electrode 140 mainly passes. In the example shown in Fig. 22, the mask first extended region 27A extends from the mask first basic region 26A in the third direction D3 in which two adjacent mask first basic regions 26A are aligned.

[0169] The first mask extended region 27A has a smaller dimension than the first mask fundamental region 26A in a direction perpendicular to the direction in which the first mask extended region 27A extends from the first mask fundamental region 26A. In the example shown in Fig. 22, the first mask extended region 27A has a smaller dimension than the first mask fundamental region 26A in a fourth direction D4 perpendicular to the third direction D3 in which the first mask extended region 27A extends from the first mask fundamental region 26A. In the fourth direction D4, the dimension W12 of the first mask extended region 27A may be 0.9 times or less, 0.8 times or less, 0.7 times or less, 0.6 times or less, or 0.5 times or less the dimension W11 of the first mask fundamental region 26A. Furthermore, in the fourth direction D4, the dimension W12 of the mask first extended region 27A may be 0.05 times or more, 0.1 times or more, 0.2 times or more, 0.3 times or more, or 0.4 times or more of the dimension W11 of the mask first basic region 26A.

[0170] The range of W12 / W11, which is the ratio of dimension W12 to dimension W11, may be defined by a first group consisting of 0.05, 0.1, 0.2, 0.3, and 0.4, and / or a second group consisting of 0.9, 0.8, 0.7, 0.6, and 0.5. The range of W12 / W11 may be defined by a combination of any one of the values ​​included in the first group described above with any one of the values ​​included in the second group described above.For example, W12 / W11 may be 0.05 or more and 0.9 or less, 0.05 or more and 0.8 or less, 0.05 or more and 0.7 or less, 0.05 or more and 0.6 or less, 0.05 or more and 0.5 or less, 0.05 or more and 0.4 or less, 0.05 or more and 0.3 or less, 0.05 or more and 0.2 or less, 0.05 or more and 0.1 or less, 0.1 or more and 0.9 or less, or 0.1 or more and 0.2 or less. It may be 0.8 or less, may be 0.1 or more and 0.7 or less, may be 0.1 or more and 0.6 or less, may be 0.1 or more and 0.5 or less, may be 0.1 or more and 0.4 or less, may be 0.1 or more and 0.3 or less, may be 0.1 or more and 0.2 or less, may be 0.2 or more and 0.9 or less, may be 0.2 or more and 0.8 or less, may be 0.2 or more and 0.7 or less, may be 0.2 or more and 0.6 or less, or may be 0.2 or more and 0.5 or less. Alternatively, it may be 0.2 or more and 0.4 or less, 0.2 or more and 0.3 or less, 0.3 or more and 0.9 or less, 0.3 or more and 0.8 or less, 0.3 or more and 0.7 or less, 0.3 or more and 0.6 or less, 0.3 or more and 0.5 or less, 0.3 or more and 0.4 or less, 0.4 or more and 0.9 or less, 0.4 or more and 0.8 or less, 0.4 or more and 0.7 or less, or 0.4 or more and 0.6 or less, may be 0.4 or more and 0.5 or less, may be 0.5 or more and 0.9 or less, may be 0.5 or more and 0.8 or less, may be 0.5 or more and 0.7 or less, may be 0.5 or more and 0.6 or less, may be 0.6 or more and 0.9 or less, may be 0.6 or more and 0.8 or less, may be 0.6 or more and 0.7 or less, may be 0.7 or more and 0.9 or less, may be 0.7 or more and 0.8 or less, may be 0.8 or more and 0.9 or less.

[0171] The mask first auxiliary regions 28A are regions through which the evaporation material constituting the electrode first auxiliary regions 143A of the first layer 140A of the second electrode 140 described above mainly passes. In the example shown in Fig. 22, the mask first auxiliary regions 28A are arranged along the third direction D3 and the fourth direction D4 at positions away from the mask first basic region 26A and the mask first extended region 27A. In the example shown in Fig. 22, the mask first auxiliary regions 28A extend in the third direction D3.

[0172] The mask first auxiliary region 28A has a smaller dimension than the mask first basic region 26A in a direction perpendicular to the direction in which the mask first auxiliary region 28A extends. In the example shown in Fig. 22, the mask first auxiliary region 28A has a smaller dimension than the mask first basic region 26A in a fourth direction D4 perpendicular to the third direction D3 in which the mask first auxiliary region 28A extends. In the fourth direction D4, the dimension W13 of the mask first auxiliary region 28A may be 0.9 times or less, 0.8 times or less, 0.7 times or less, 0.6 times or less, or 0.5 times or less the dimension W11 of the mask first basic region 26A. Furthermore, in the fourth direction D4, the dimension W13 of the mask first auxiliary region 28A may be 0.05 times or more, 0.1 times or more, 0.2 times or more, 0.3 times or more, or 0.4 times or more of the dimension W11 of the mask first basic region 26A.

[0173] The range of W13 / W11, which is the ratio of dimension W13 to dimension W11, may be defined by a first group consisting of 0.05, 0.1, 0.2, 0.3, and 0.4, and / or a second group consisting of 0.9, 0.8, 0.7, 0.6, and 0.5. The range of W13 / W11 may be defined by a combination of any one of the values ​​included in the first group described above with any one of the values ​​included in the second group described above.For example, W13 / W11 may be 0.05 or more and 0.9 or less, 0.05 or more and 0.8 or less, 0.05 or more and 0.7 or less, 0.05 or more and 0.6 or less, 0.05 or more and 0.5 or less, 0.05 or more and 0.4 or less, 0.05 or more and 0.3 or less, 0.05 or more and 0.2 or less, 0.05 or more and 0.1 or less, 0.1 or more and 0.9 or less, or 0.1 or more and 0.2 or less. It may be 0.8 or less, may be 0.1 or more and 0.7 or less, may be 0.1 or more and 0.6 or less, may be 0.1 or more and 0.5 or less, may be 0.1 or more and 0.4 or less, may be 0.1 or more and 0.3 or less, may be 0.1 or more and 0.2 or less, may be 0.2 or more and 0.9 or less, may be 0.2 or more and 0.8 or less, may be 0.2 or more and 0.7 or less, may be 0.2 or more and 0.6 or less, or may be 0.2 or more and 0.5 or less. Alternatively, it may be 0.2 or more and 0.4 or less, 0.2 or more and 0.3 or less, 0.3 or more and 0.9 or less, 0.3 or more and 0.8 or less, 0.3 or more and 0.7 or less, 0.3 or more and 0.6 or less, 0.3 or more and 0.5 or less, 0.3 or more and 0.4 or less, 0.4 or more and 0.9 or less, 0.4 or more and 0.8 or less, 0.4 or more and 0.7 or less, or 0.4 or more and 0.6 or less, may be 0.4 or more and 0.5 or less, may be 0.5 or more and 0.9 or less, may be 0.5 or more and 0.8 or less, may be 0.5 or more and 0.7 or less, may be 0.5 or more and 0.6 or less, may be 0.6 or more and 0.9 or less, may be 0.6 or more and 0.8 or less, may be 0.6 or more and 0.7 or less, may be 0.7 or more and 0.9 or less, may be 0.7 or more and 0.8 or less, may be 0.8 or more and 0.9 or less.

[0174] 23 is a plan view showing the second vapor deposition mask 20B as viewed from the first surface 201 side. As shown in FIG. 23, the second vapor deposition mask 20B has a plurality of second through holes 25B including regions arranged along two different directions. The plurality of second through holes 25B includes at least a plurality of second mask basic regions 26B arranged along two different directions. The plurality of second through holes 25B may include a plurality of second mask extended regions 27B arranged along two different directions. Furthermore, the plurality of second through holes 25B may include a plurality of second mask auxiliary regions 28B arranged along two different directions.

[0175] The mask second basic region 26B is a region through which the evaporation material constituting the electrode second basic region 141B of the second layer 140B of the second electrode 140 mainly passes. In the example shown in Fig. 23, the multiple mask second basic regions 26B are arranged along the third direction D3 and the fourth direction D4.

[0176] The mask second extended region 27B is a region through which the evaporation material constituting the above-described electrode second extended region 142B of the second layer 140B of the second electrode 140 mainly passes. In the example shown in Fig. 23, the mask second extended region 27B extends from the mask second basic region 26B in the fourth direction D4 in which two adjacent mask second basic regions 26B are aligned.

[0177] Similar to the first mask extended region 27A described above, the second mask extended region 27B has a smaller dimension than the second mask fundamental region 26B in a direction perpendicular to the direction in which the second mask extended region 27B extends from the second mask fundamental region 26B. In the example shown in Fig. 23, the second mask extended region 27B has a smaller dimension than the second mask fundamental region 26B in a third direction D3 perpendicular to the fourth direction D4 in which two adjacent second mask fundamental regions 26B are aligned. The relationship between the dimension W22 of the second mask extended region 27B and the dimension W21 of the second mask fundamental region 26B in the third direction D3 is similar to the relationship between the dimension W12 of the first mask extended region 27A and the dimension W11 of the first mask fundamental region 26A described above, and therefore will not be described in detail.

[0178] The mask second auxiliary regions 28B are regions through which the evaporation material constituting the electrode second auxiliary regions 143B of the second layer 140B of the second electrode 140 described above mainly passes. In the example shown in Fig. 23, the multiple mask second auxiliary regions 28B are arranged along the third direction D3 and the fourth direction D4 at positions away from the mask second basic region 26B and the mask second extended region 27B. In the example shown in Fig. 23, the mask second auxiliary regions 28B extend in the fourth direction D4.

[0179] The mask second auxiliary region 28B has a smaller dimension than the mask second basic region 26B in a direction perpendicular to the direction in which the mask second auxiliary region 28B extends. In the example shown in Fig. 23, the mask second auxiliary region 28B has a smaller dimension than the mask second basic region 26B in a third direction D3 perpendicular to the fourth direction D4 in which the mask second auxiliary region 28B extends. The relationship between the dimension W23 of the mask second auxiliary region 28B and the dimension W21 of the mask second basic region 26B in the third direction D3 is similar to the relationship between the dimension W13 of the mask first auxiliary region 28A and the dimension W11 of the mask first basic region 26A described above, and therefore will not be described in detail again.

[0180] 24 is a plan view showing the third vapor deposition mask 20C as viewed from the first surface 201 side. As shown in FIG. 24, the third vapor deposition mask 20C has a plurality of third through holes 25C including regions arranged along two different directions. The plurality of third through holes 25C includes at least a plurality of mask third basic regions 26C arranged along two different directions. The plurality of third through holes 25C may include a plurality of mask third extended regions 27C arranged along two different directions.

[0181] The mask third basic region 26C is a region through which the deposition material constituting the electrode third basic region 141C of the third layer 140C of the second electrode 140 mainly passes. In the example shown in Fig. 24, the plurality of mask third basic regions 26C are arranged along the first direction D1 and the second direction D2.

[0182] The mask third extended region 27C is a region through which the vapor deposition material constituting the electrode third extended region 142C of the third layer 140C of the second electrode 140 described above mainly passes. The mask third extended region 27C may extend from the mask third basic region 26C in the third direction D3 in which the mask first basic regions 26A of the first vapor deposition mask 20A are arranged. The mask second extended region 27B may extend from the mask third basic region 26C in the fourth direction D4 in which the mask second basic regions 26B of the second vapor deposition mask 20B are arranged.

[0183] In a direction perpendicular to the direction in which the mask third extended region 27C extends from the mask third fundamental region 26C, the dimension W32 of the mask third extended region 27C is smaller than the dimension W31 of the mask third fundamental region 26C. The relationship between the dimension W32 of the mask third extended region 27C and the dimension W31 of the mask third fundamental region 26C is similar to the relationship between the dimension W12 of the mask first extended region 27A and the dimension W11 of the mask first fundamental region 26A described above, and therefore a detailed description thereof will be omitted.

[0184] Next, an example of a method for manufacturing the electronic device 100 will be described.

[0185] First, a substrate 91 is prepared on which a plurality of first electrodes 120 arranged in the third direction D3 and the fourth direction D4 are formed. Subsequently, as shown in FIG. 17 , a first current-carrying layer 130A, a second current-carrying layer 130B, and a third current-carrying layer 130C are formed on the first electrode 120. The first current-carrying layer 130A is formed, for example, by depositing an organic material or the like onto the first electrode 120 corresponding to the first current-carrying layer 130A by a vapor deposition method using a vapor deposition mask having through-holes corresponding to the first current-carrying layer 130A. The second current-carrying layer 130B may also be formed by depositing an organic material or the like onto the first electrode 120 corresponding to the second current-carrying layer 130B by a vapor deposition method using a vapor deposition mask having through-holes corresponding to the second current-carrying layer 130B. The third conductive layer 130C may also be formed by depositing an organic material or the like onto the first electrode 120 corresponding to the third conductive layer 130C by a vapor deposition method using a vapor deposition mask having through holes corresponding to the third conductive layer 130C.

[0186] Next, a first layer 140A of the second electrode 140 is formed by depositing a conductive material such as metal onto the substrate 91 or the like by vapor deposition using a first vapor deposition mask apparatus 10A equipped with a first vapor deposition mask 20A. Next, a second layer 140B of the second electrode 140 is formed by depositing a conductive material such as metal onto the substrate 91 or the like by vapor deposition using a second vapor deposition mask apparatus 10B equipped with a second vapor deposition mask 20B. Next, a third layer 140C of the second electrode 140 is formed by depositing a conductive material such as metal onto the substrate 91 or the like by vapor deposition using a third vapor deposition mask apparatus 10C equipped with a third vapor deposition mask 20C. In this manner, the second electrode 140 including the first layer 140A, the second layer 140B, and the third layer 140C can be formed, as shown in FIGS. 18 to 21 . The order in which the first layer 140A, the second layer 140B, and the third layer 140C are formed is not particularly limited. For example, the order may be third layer 140C, second layer 140B, and first layer 140A.

[0187] The effects that can be achieved by forming the second electrode 140 using a deposition mask group including a first deposition mask 20A, a second deposition mask 20B, and a third deposition mask 20C will be described with reference to Fig. 25. Fig. 25 is a diagram showing a stacked body 21 obtained by stacking the first deposition mask 20A, the second deposition mask 20B, and the third deposition mask 20C.

[0188] 25, the first through holes 25A in the first deposition mask 20A are indicated by dashed lines, the second through holes 25B in the second deposition mask 20B are indicated by dotted lines, and the third through holes 25C in the third deposition mask 20C are indicated by solid lines. As shown in Fig. 25, when the first deposition mask 20A, the second deposition mask 20B, and the third deposition mask 20C are overlapped, the first through holes 25A in the first deposition mask 20A partially overlap with the second through holes 25B in the second deposition mask 20B or the third through holes 25C in the third deposition mask 20C. This means that the first layer 140A of the second electrode 140 formed on the substrate 91 by the vapor deposition material that passed through the first through-hole 25A partially overlaps with the second layer 140B of the second electrode 140 formed on the substrate 91 by the vapor deposition material that passed through the second through-hole 25B, or the third layer 140C of the second electrode 140 formed on the substrate 91 by the vapor deposition material that passed through the third through-hole 25C. This allows the first layer 140A to be electrically connected to the second layer 140B or the third layer 140C, making it easier to stably control the potential of the second electrode 140.

[0189] The overlapping of the first through holes 25A of the first deposition mask 20A, the second through holes 25B of the second deposition mask 20B, and the third through holes 25C of the third deposition mask 20C will be described in detail. As shown in Fig. 25, when the first deposition mask 20A, the second deposition mask 20B, and the third deposition mask 20C are overlapped, the first mask extension region 27A of the first deposition mask 20A may extend from the first mask fundamental region 26A so as to partially overlap the third mask fundamental region 26C of the third deposition mask 20C. This allows the first electrode extension region 142A of the first layer 140A, which is formed corresponding to the first mask extension region 27A, to partially overlap the third electrode fundamental region 141C of the third layer 140C, which is formed corresponding to the third mask fundamental region 26C. Furthermore, the second mask extension region 27B of the second vapor deposition mask 20B may extend from the second mask fundamental region 26B so as to partially overlap the third mask fundamental region 26C of the third vapor deposition mask 20C. This allows the second electrode extension region 142B of the second layer 140B to partially overlap the third electrode fundamental region 141C of the third layer 140C. Furthermore, the third mask extension region 27C of the third vapor deposition mask 20C may extend from the third mask fundamental region 26C so as to partially overlap the first mask fundamental region 26A of the first vapor deposition mask 20A. This allows the third electrode extension region 142C of the third layer 140C to partially overlap the first electrode fundamental region 141A of the first layer 140A. Furthermore, the third mask extension region 27C of the third vapor deposition mask 20C may extend from the third mask basic region 26C so as to partially overlap the second mask basic region 26B of the second vapor deposition mask 20B. This allows the third electrode extension region 142C of the third layer 140C to partially overlap the second electrode basic region 141B of the second layer 140B.

[0190] 25 , when the first deposition mask 20A, the second deposition mask 20B, and the third deposition mask 20C are superimposed, the first mask auxiliary region 28A of the first deposition mask 20A may extend between the second mask fundamental region 26B of the second deposition mask 20B and the third mask fundamental region 26C of the third deposition mask 20C so as to partially overlap them. This allows the first electrode auxiliary region 143A of the first layer 140A formed corresponding to the first mask auxiliary region 28A to partially overlap the second electrode fundamental region 141B of the second layer 140B and the third electrode fundamental region 141C of the third layer 140C. The second mask auxiliary region 28B of the second deposition mask 20B may extend between the first mask fundamental region 26A of the first deposition mask 20A and the third mask fundamental region 26C of the third deposition mask 20C so as to partially overlap them. This allows the electrode second auxiliary region 143B of the second layer 140B, which is formed corresponding to the mask second auxiliary region 28B, to partially overlap the electrode first basic region 141A of the first layer 140A and the electrode third basic region 141C of the third layer 140C.

[0191] Preferably, when the first vapor deposition mask 20A, the second vapor deposition mask 20B, and the third vapor deposition mask 20C are overlapped, the first through holes 25A of the first vapor deposition mask 20A are connected to the other first through holes 25A via the second through holes 25B of the second vapor deposition mask 20B or the third through holes 25C of the third vapor deposition mask 20C. This allows the first layers 140A to be electrically connected to the other first layers 140A via the second layers 140B or the third layers 140C. Furthermore, when the first vapor deposition mask 20A, the second vapor deposition mask 20B, and the third vapor deposition mask 20C are overlapped, the first through holes 25A of the first vapor deposition mask 20A may be connected to the other first through holes 25A via the second through holes 25B of the second vapor deposition mask 20B and the third through holes 25C of the third vapor deposition mask 20C. This allows the first layer 140A to be electrically connected to another first layer 140A via the second layer 140B and the third layer 140C.

[0192] 17 to 25, as shown in Fig. 18, a non-electrode region 150 in which no second electrode 140 is provided can be formed between a first element 110A including a first current-carrying layer 130A and a second element 110B including a second current-carrying layer 130B. Furthermore, a non-electrode region 150 in which no second electrode 140 is provided can be formed between two third elements 110C including a third current-carrying layer 130C. This can increase the light transmittance of the electronic device 100 compared to when the second electrode 140 is formed over the entire area of ​​the substrate 91.

[0193] 17 to 25, the first electrode basic region 141A of the first layer 140A of the first element 110A, the second electrode basic region 141B of the second layer 140B of the second element 110B, and the third electrode basic region 141C of the third layer 140C of the third element 110C are electrically connected to one another via the electrode extension regions 142A, 142B, and 142C and the electrode auxiliary regions 143A and 143B, etc. This makes it easier to stably control the potential of the second electrode 140.

[0194] 17 to 25, the first layer 140A, the second layer 140B, and the third layer 140C of the second electrode 140 are formed by vapor deposition using different vapor deposition masks 20. This allows the structures of the first layer 140A, the second layer 140B, and the third layer 140C to be independently configured. For example, the material of the first layer 140A can be different from the material of the second layer 140B or the material of the third layer 140C. The thickness of the first layer 140A can be different from the thickness of the second layer 140B or the thickness of the third layer 140C. This facilitates individual control of the characteristics of each element 110A, 110B, and 110C.

[0195] 17 to 25, the first layer 140A can partially overlap the second layer 140B or the third layer 140C. The electrical resistance of the region of the second electrode 140 where the two layers overlap is lower than the electrical resistance of the region of the second electrode 140 consisting of two layers. The regions of the second electrode 140 where the two layers overlap exist periodically along the arrangement direction of the current-carrying layers 130, for example. Therefore, the electrical resistance of the second electrode 140 in the in-plane direction of the substrate 91 can be reduced compared to when the second electrode 140 is configured from a single conductive layer.

[0196] 17 to 25, an example is shown in which the first mask extended region 27A extends from the first mask fundamental region 26A of the first through-hole 25A of the first vapor deposition mask 20A. However, this is not limiting. For example, as shown in FIG. 26, the first through-hole 25A of the first vapor deposition mask 20A may include a first mask fundamental region 26A to which the first mask extended region 27A is not connected. Similarly, as shown in FIG. 27, the second through-hole 25B of the second vapor deposition mask 20B may include a second mask fundamental region 26B to which the second mask extended region 27B is not connected. Similarly, as shown in FIG. 28, the third through-hole 25C of the third vapor deposition mask 20C may include a third mask fundamental region 26C to which the third mask extended region 27C is not connected. 26, in the direction perpendicular to the third direction D3 in which the mask first extended region 27A extends from the mask first basic region 26A, the dimension W12 of the mask first extended region 27A may be smaller than the dimension W11 of the mask first basic region 26A. The relationship between the dimension W12 and the dimension W11 is the same as in the example of FIG. 22, and therefore will not be described again. 26, in the direction perpendicular to the third direction D3 in which the mask first auxiliary region 28A extends, the dimension W13 of the mask first auxiliary region 28A may be smaller than the dimension W11 of the mask first basic region 26A. The relationship between the dimension W13 and the dimension W11 is the same as in the example of FIG. 22, and therefore will not be described again. 27, in the direction perpendicular to the fourth direction D4 in which the mask second extended region 27B extends from the mask second basic region 26B, the dimension W22 of the mask second extended region 27B may be smaller than the dimension W21 of the mask second basic region 26B. The relationship between the dimension W22 and the dimension W21 is the same as in the example of FIG. 23, and therefore description thereof will be omitted. 27, in the direction perpendicular to the fourth direction D4 in which the mask second auxiliary region 28B extends, the dimension W23 of the mask second auxiliary region 28B may be smaller than the dimension W21 of the mask second basic region 26B. The relationship between the dimension W23 and the dimension W21 is the same as in the example of FIG. 23, and therefore description thereof will be omitted. 28, in a direction perpendicular to the third direction D3 or the fourth direction D4 in which the mask third extended region 27C extends from the mask third basic region 26C, the dimension W32 of the mask third extended region 27C may be smaller than the dimension W31 of the mask third basic region 26C. The relationship between the dimension W32 and the dimension W31 is the same as in the example of FIG. 24, and therefore will not be described again.

[0197] 26, the second deposition mask 20B of FIG. 27, and the third deposition mask 20C of FIG. 28. According to the embodiment shown in FIGS. 26 to 29, when the first deposition mask 20A, the second deposition mask 20B, and the third deposition mask 20C are stacked, a region 21V in which the through holes 25 of the deposition mask 20 do not exist can be provided between the first mask fundamental region 26A and the third mask fundamental region 26C adjacent to each other in the third direction D3 or the fourth direction D4, or between the second mask fundamental region 26B and the third mask fundamental region 26C, as shown in FIG. 29. This allows a non-electrode region 150 in which the second electrode 140 is not provided to be formed between the first element 110A and the third element 110C adjacent to each other in the third direction D3 or the fourth direction D4, or between the second element 110B and the third element 110C. This makes it possible to increase the proportion of the non-electrode region 150 in the electronic device 100, and to increase the light transmittance of the electronic device 100.

[0198] The deposition masks 20A, 20B, and 20C may be configured such that, when the first deposition mask 20A, the second deposition mask 20B, and the third deposition mask 20C are overlapped, a first mask extended region 27A of the first deposition mask 20A or a second mask extended region 27B of the second deposition mask 20B overlaps with a third mask extended region 27C of the third deposition mask 20C. For example, as shown in Fig. 29, when the first deposition mask 20A, the second deposition mask 20B, and the third deposition mask 20C are overlapped, some of the first mask extended regions 27A and some of the third mask extended regions 27C may overlap. 26, for example, such a state may be realized by having the first through-hole 25A of the first vapor deposition mask 20A include a first mask extended region 27A extending from the first mask basic region 26A on one side in the third direction D3 and a first mask extended region 27A extending from the first mask basic region 26A on the other side in the third direction D3. According to the example shown in Fig. 29, the second electrode 140 is formed so that the first electrode extended region 142A and the third electrode extended region 142C of the second electrode 140 overlap in a portion where the first mask extended region 27A and the third mask extended region 27C overlap. This can reduce the electrical resistance between the first electrode basic region 141A and the third electrode basic region 141C. Therefore, as shown in Figure 29, even if a region 21V where no through holes 25 of the deposition mask 20 exist is provided between the mask first basic region 26A and the mask third basic region 26C adjacent to each other in the third direction D3 or the fourth direction D4, or between the mask second basic region 26B and the mask third basic region 26C, the electrical resistance of the entire second electrode 140 can be maintained low.

[0199] 29, in a portion where the mask first extended region 27A and the mask third extended region 27C overlap, the mask first extended region 27A may extend so as to partially overlap with the mask third basic region 26C. In addition, in a portion where the mask first extended region 27A and the mask third extended region 27C overlap, the mask third extended region 27C may extend so as to partially overlap with the mask first basic region 26A. When the through holes of two or more deposition masks 20 overlap, two or more layers of the second electrode 140 formed correspondingly can overlap.

[0200] Next, other examples of forming the second electrode 140 of the electronic device 100 using a deposition mask group will be described with reference to Fig. 30 to Fig. 35. In the embodiments shown in Fig. 30 to Fig. 35, parts that can be configured similarly to the embodiments shown in Fig. 17 to Fig. 25 will be denoted by the same reference numerals as those used for the corresponding parts in the embodiments shown in Fig. 17 to Fig. 25, and duplicated explanations will be omitted.

[0201] 30 is a plan view showing the substrate 91 in a state in which the second electrode 140 is formed on the first current-carrying layer 130A, the second current-carrying layer 130B, and the third current-carrying layer 130C shown in FIG. 17. FIG. 31 is a cross-sectional view of the electronic device 100 of FIG. 30 taken along line XXX-XXX. As shown in FIG. 30, the electronic device 100 includes a non-electrode region 150 in which the second electrode 140 is not provided. As shown in FIG. 31, the first layer 140A may include an electrode first auxiliary region 143A extending in the first direction D1 to electrically connect the electrode third basic region 141C of the third layer 140C and the electrode first basic region 141A of the first layer 140A. Similarly, although not shown, the second layer 140B may include an electrode second auxiliary region extending in the first direction D1 so as to electrically connect the electrode third basic region 141C of the third layer 140C and the electrode second basic region 141B of the second layer 140B.

[0202] Fig. 32 is a plan view showing the first deposition mask 20A when viewed from the first surface 201 side. As shown in Fig. 32, the mask first auxiliary regions 28A of the first deposition mask 20A extend in a first direction D1. As shown in Fig. 32, the mask first auxiliary regions 28A may be connected to the mask first basic regions 26A. The mask first auxiliary regions 28A have larger dimensions than the mask first basic regions 26A in the first direction D1, which is the direction in which the mask first auxiliary regions 28A extend.

[0203] 32, the dimension W13 of the mask first auxiliary region 28A in the second direction D2 orthogonal to the first direction D1, which is the direction in which the mask first auxiliary region 28A extends, is smaller than the dimension W11 of the mask first basic region 26A in the second direction D2. The relationship between the dimension W13 of the mask first auxiliary region 28A and the dimension W11 of the mask first basic region 26A is similar to the relationship between the dimension W13 of the mask first auxiliary region 28A and the dimension W11 of the mask first basic region 26A in the example shown in Fig. 22 above, and therefore a detailed description thereof will be omitted.

[0204] Fig. 33 is a plan view showing the second vapor deposition mask 20B when viewed from the first surface 201 side. As shown in Fig. 33, the mask second auxiliary regions 28B of the second vapor deposition mask 20B extend in the first direction D1. As shown in Fig. 33, the mask second auxiliary regions 28B may be connected to the mask second basic regions 26B. The mask second auxiliary regions 28B have larger dimensions than the mask second basic regions 26B in the first direction D1, which is the direction in which the mask second auxiliary regions 28B extend.

[0205] 33, the dimension W23 of the mask second auxiliary region 28B in the second direction D2 perpendicular to the first direction D1, which is the direction in which the mask second auxiliary region 28B extends, is smaller than the dimension W21 of the mask second basic region 26B in the second direction D2. The relationship between the dimension W23 of the mask second auxiliary region 28B and the dimension W21 of the mask second basic region 26B is similar to the relationship between the dimension W23 of the mask second auxiliary region 28B and the dimension W21 of the mask second basic region 26B in the example shown in Fig. 23 above, and therefore a detailed description thereof will be omitted.

[0206] As shown in Fig. 34, the third through hole 25C includes at least the mask third basic region 26C. As shown in Fig. 34, the third through hole 25C does not have to include the above-mentioned mask third extended region 27C. Although not shown, the third through hole 25C may include the above-mentioned mask third extended region 27C.

[0207] FIG. 35 is a diagram showing a stack 21 obtained by stacking the first deposition mask 20A of FIG. 32, the second deposition mask 20B of FIG. 33, and the third deposition mask 20C of FIG. 34. In the embodiment shown in FIGS. 30 to 35, when the first deposition mask 20A, the second deposition mask 20B, and the third deposition mask 20C are stacked, the first through-hole 25A of the first deposition mask 20A partially overlaps with the second through-hole 25B of the second deposition mask 20B or the third through-hole 25C of the third deposition mask 20C. This allows the first layer 140A to be electrically connected to the second layer 140B or the third layer 140C, making it easier to stably control the potential of the second electrode 140. Furthermore, the first layer 140A can partially overlap with the second layer 140B or the third layer 140C. This allows the electrical resistance of the second electrode 140 in the in-plane direction of the substrate 91 to be reduced.

[0208] The overlapping of the first through holes 25A of the first deposition mask 20A, the second through holes 25B of the second deposition mask 20B, and the third through holes 25C of the third deposition mask 20C will be described in detail. As shown in Fig. 35, when the first deposition mask 20A, the second deposition mask 20B, and the third deposition mask 20C are overlapped, the mask first auxiliary region 28A of the first deposition mask 20A may extend in the first direction D1 so as to partially overlap two mask third fundamental regions 26C adjacent to each other in the first direction D1. This allows the electrode first auxiliary region 143A of the first layer 140A formed corresponding to the mask first auxiliary region 28A to partially overlap the electrode third fundamental region 141C of the third layer 140C formed corresponding to the mask third fundamental region 26C. Furthermore, the mask second auxiliary region 28B of the second vapor deposition mask 20B may extend in the first direction D1 so as to partially overlap two mask third basic regions 26C adjacent to each other in the first direction D1. This allows the electrode second auxiliary region 143B of the second layer 140B formed corresponding to the mask second auxiliary region 28B to partially overlap the electrode third basic region 141C of the third layer 140C.

[0209] 30 to 35, a non-electrode region 150 in which the second electrode 140 is not provided can be formed between the first element 110A including the first current-carrying layer 130A and the second element 110B including the second current-carrying layer 130B, as shown in Fig. 30. Furthermore, a non-electrode region 150 in which the second electrode 140 is not provided can be formed between two third elements 110C including the third current-carrying layer 130C. This can increase the light transmittance of the electronic device 100 compared to when the second electrode 140 is formed over the entire area of ​​the substrate 91.

[0210] Next, other examples of forming the second electrode 140 of the electronic device 100 using a deposition mask group will be described with reference to Figs. 36 to 42B. In the embodiments shown in Figs. 36 to 42B, parts that can be configured similarly to the embodiments shown in Figs. 17 to 25 will be designated by the same reference numerals as those used for the corresponding parts in the embodiments shown in Figs. 17 to 25, and duplicated explanations will be omitted.

[0211] FIG. 36 is an enlarged view of a portion of the substrate 91 on which the first current conducting layer 130A, the second current conducting layer 130B, and the third current conducting layer 130C are formed. In the example shown in FIG. 36, two or more first current conducting layers 130A are arranged along the first direction D1. Two or more second current conducting layers 130B are arranged along the first direction D1. Two or more third current conducting layers 130C are arranged along the first direction D1. As shown in FIG. 36, a row of first current conducting layers 130A aligned in the first direction D1, a row of second current conducting layers 130B aligned in the first direction D1, and a row of third current conducting layers 130C aligned in the first direction D1 are arranged in this order in the second direction D1 intersecting the first direction D1. Therefore, the two or more first current conducting layers 130A are arranged along the first direction D1 and the second direction D2. The same applies to the second current-carrying layer 130B and the third current-carrying layer 130C. The second direction D2 may be a direction perpendicular to the first direction D1.

[0212] Fig. 37 is a plan view showing the substrate 91 in a state where the second electrode 140 is formed on the first current-carrying layer 130A, the second current-carrying layer 130B, and the third current-carrying layer 130C shown in Fig. 36. Fig. 38 is a cross-sectional view of the electronic device 100 taken along line XXXVIII-XXXVIII of Fig. 37. As shown in Fig. 37, the electronic device 100 includes a non-electrode region 150 where the second electrode 140 is not provided.

[0213] 38, the first layer 140A includes an electrode first basic region 141A overlapping the first electrode 120 and the first current-carrying layer 130A. The second layer 140B includes an electrode second basic region 141B overlapping the first electrode 120 and the second current-carrying layer 130B. The third layer 140C includes an electrode third basic region 141C overlapping the first electrode 120 and the third current-carrying layer 130C.

[0214] 38, the first layer 140A further includes an electrode first extension region 142A extending from the electrode first basic region 141A to electrically connect the electrode first basic region 141A and the electrode second basic region 141B. The second layer 140B further includes an electrode second extension region 142B extending from the electrode second basic region 141B to electrically connect the electrode second basic region 141B and the electrode third basic region 141C. The third layer 140C further includes an electrode third extension region 142C extending from the electrode third basic region 141C to electrically connect the electrode third basic region 141C and the electrode first basic region 141A.

[0215] Next, a first deposition mask 20A, a second deposition mask 20B, and a third deposition mask 20C used to form the first layer 140A, the second layer 140B, and the third layer 140C of the second electrode 140 shown in FIGS. 37 and 38 will be described.

[0216] 39 is a plan view showing the first deposition mask 20A when viewed from the first surface 201 side. As shown in FIG. 39, the first deposition mask 20A has a plurality of first through holes 25A arranged along a first direction D1 and a second direction D2. The plurality of first through holes 25A includes a plurality of mask first fundamental regions 26A arranged along the first direction D1 and the second direction D2. The plurality of first through holes 25A may include a plurality of mask first extended regions 27A arranged along the first direction D1 and the second direction D2. The mask first extended regions 27A extend from the mask first fundamental regions 26A in the second direction D2, in which two adjacent mask first fundamental regions 26A are aligned. In the direction perpendicular to the second direction D2 in which the mask first extended region 27A extends from the mask first basic region 26A, the dimension W12 of the mask first extended region 27A may be smaller than the dimension W11 of the mask first basic region 26A. The relationship between the dimension W12 and the dimension W11 is the same as in the example of FIG. 22, and therefore description thereof will be omitted.

[0217] 40 is a plan view showing the second vapor deposition mask 20B when viewed from the first surface 201 side. As shown in FIG. 40, the second vapor deposition mask 20B has a plurality of second through holes 25B arranged along the first direction D1 and the second direction D2. The plurality of second through holes 25B includes a plurality of second mask fundamental regions 26B arranged along the first direction D1 and the second direction D2. The plurality of second through holes 25B may include a plurality of second mask extended regions 27B arranged along the first direction D1 and the second direction D2. The second mask extended regions 27B extend from the second mask fundamental regions 26B in the second direction D2, in which two adjacent second mask fundamental regions 26B are aligned. In the direction perpendicular to the second direction D2 in which the mask second extended region 27B extends from the mask second basic region 26B, the dimension W22 of the mask second extended region 27B may be smaller than the dimension W21 of the mask second basic region 26B. The relationship between the dimension W22 and the dimension W21 is the same as in the example of FIG. 23, and therefore description thereof will be omitted.

[0218] 41 is a plan view showing the third deposition mask 20C when viewed from the first surface 201 side. As shown in FIG. 41, the third deposition mask 20C has a plurality of third through holes 25C arranged along the first direction D1 and the second direction D2. The plurality of third through holes 25C includes a plurality of mask third fundamental regions 26C arranged along the first direction D1 and the second direction D2. The plurality of third through holes 25C may include a plurality of mask third extended regions 27C arranged along the first direction D1 and the second direction D2. The mask third extended regions 27C extend from the mask third fundamental regions 26C in the second direction D2, in which two adjacent mask third fundamental regions 26C are aligned. In the direction perpendicular to the second direction D2 in which the mask third extended region 27C extends from the mask third basic region 26C, the dimension W32 of the mask third extended region 27C may be smaller than the dimension W31 of the mask third basic region 26C. The relationship between the dimension W32 and the dimension W31 is the same as in the example of FIG. 24, and therefore description thereof will be omitted.

[0219] FIG. 42A is a diagram showing a stacked body 21 obtained by stacking the first deposition mask 20A of FIG. 39, the second deposition mask 20B of FIG. 40, and the third deposition mask 20C of FIG. 41. FIG. 42B is a diagram showing a wider range of the stacked body 21 of FIG. 42A. In the embodiment shown in FIGS. 36 to 42B, when the first deposition mask 20A, the second deposition mask 20B, and the third deposition mask 20C are stacked, the first through-hole 25A of the first deposition mask 20A partially overlaps with the second through-hole 25B of the second deposition mask 20B or the third through-hole 25C of the third deposition mask 20C. This allows electrical connection between the first layer 140A and the second layer 140B or the third layer 140C, making it easier to stably control the potential of the second electrode 140. Furthermore, the first layer 140A can partially overlap with the second layer 140B or the third layer 140C. This allows the electrical resistance of the second electrode 140 in the in-plane direction of the substrate 91 to be reduced.

[0220] The overlapping of the first through holes 25A of the first deposition mask 20A, the second through holes 25B of the second deposition mask 20B, and the third through holes 25C of the third deposition mask 20C will be described in detail. As shown in FIG. 42A , when the first deposition mask 20A, the second deposition mask 20B, and the third deposition mask 20C are overlapped, the first mask extension region 27A of the first deposition mask 20A may extend from the first mask fundamental region 26A so as to partially overlap the second mask fundamental region 26B of the second deposition mask 20B. This allows the first electrode extension region 142A of the first layer 140A, which is formed corresponding to the first mask extension region 27A, to partially overlap the second electrode fundamental region 141B of the second layer 140B, which is formed corresponding to the second mask fundamental region 26B. Furthermore, the second mask extension region 27B of the second vapor deposition mask 20B may extend from the second mask fundamental region 26B so as to partially overlap the third mask fundamental region 26C of the third vapor deposition mask 20C. This allows the second electrode extension region 142B of the second layer 140B to partially overlap the third electrode fundamental region 141C of the third layer 140C. Furthermore, the third mask extension region 27C of the third vapor deposition mask 20C may extend from the third mask fundamental region 26C so as to partially overlap the first mask fundamental region 26A of the first vapor deposition mask 20A. This allows the third electrode extension region 142C of the third layer 140C to partially overlap the first electrode fundamental region 141A of the first layer 140A.

[0221] Next, other examples of forming the second electrode 140 of the electronic device 100 using the deposition mask group will be described with reference to Figs. 43 to 48B. In the embodiment shown in Figs. 43 to 42B, parts that can be configured similarly to the embodiment shown in Figs. 36 to 42B will be denoted by the same reference numerals as those used for the corresponding parts in the embodiment shown in Figs. 36 to 42B, and duplicated explanations will be omitted.

[0222] Fig. 43 is a plan view showing the substrate 91 in a state where the second electrode 140 is formed on the first current-carrying layer 130A, the second current-carrying layer 130B, and the third current-carrying layer 130C shown in Fig. 36. Fig. 44 is a cross-sectional view of the electronic device 100 taken along line XXXXIV-XXXXIV of Fig. 43. As shown in Fig. 43, the electronic device 100 includes a non-electrode region 150 where the second electrode 140 is not provided.

[0223] 44, the first layer 140A may include an electrode first extension region 142A extending from the electrode first basic region 141A toward the second layer 140B in the second direction D2, and an electrode first extension region 142A extending from the electrode first basic region 141A toward the third layer 140C in the second direction D2. The second layer 140B may include an electrode second extension region 142B extending from the electrode second basic region 141B toward the first layer 140A in the second direction D2, and an electrode second extension region 142B extending from the electrode second basic region 141B toward the third layer 140C in the second direction D2. The third layer 140C may include an electrode third extension region 142C extending from the electrode third basic region 141C toward the first layer 140A in the second direction D2, and an electrode third extension region 142C extending from the electrode third basic region 141C toward the second layer 140B in the second direction D2.

[0224] Next, a first deposition mask 20A, a second deposition mask 20B, and a third deposition mask 20C used to form the first layer 140A, the second layer 140B, and the third layer 140C of the second electrode 140 shown in FIGS. 43 and 44 will be described.

[0225] Fig. 45 is a plan view showing the first vapor deposition mask 20A when viewed from the first surface 201. As shown in Fig. 45, the first through-hole 25A may include a first mask extended region 27A extending from the first mask basic region 26A to one side in the second direction D2 and a first mask extended region 27A extending from the first mask basic region 26A to the other side in the second direction D2. In the direction perpendicular to the second direction D2 in which the mask first extended region 27A extends from the mask first basic region 26A, the dimension W12 of the mask first extended region 27A may be smaller than the dimension W11 of the mask first basic region 26A. The relationship between the dimension W12 and the dimension W11 is the same as in the example of FIG. 22, and therefore description thereof will be omitted.

[0226] Fig. 46 is a plan view showing the second vapor deposition mask 20B when viewed from the first surface 201. As shown in Fig. 46, the second through-hole 25B may include a second mask extended region 27B extending from the second mask basic region 26B to one side in the second direction D2 and a second mask extended region 27B extending from the second mask basic region 26B to the other side in the second direction D2. In the direction perpendicular to the second direction D2 in which the mask second extended region 27B extends from the mask second basic region 26B, the dimension W22 of the mask second extended region 27B may be smaller than the dimension W21 of the mask second basic region 26B. The relationship between the dimension W22 and the dimension W21 is the same as in the example of FIG. 23, and therefore description thereof will be omitted.

[0227] Fig. 47 is a plan view showing the third vapor deposition mask 20C when viewed from the first surface 201 side. As shown in Fig. 47, the third through-hole 25C may include a mask third extended region 27C extending from the mask third basic region 26C to one side in the second direction D2 and a mask third extended region 27C extending from the mask third basic region 26C to the other side in the second direction D2. In the direction perpendicular to the second direction D2 in which the mask third extended region 27C extends from the mask third basic region 26C, the dimension W32 of the mask third extended region 27C may be smaller than the dimension W31 of the mask third basic region 26C. The relationship between the dimension W32 and the dimension W31 is the same as in the example of FIG. 24, and therefore description thereof will be omitted.

[0228] FIG. 48A is a diagram showing a stacked body 21 obtained by stacking the first deposition mask 20A of FIG. 45, the second deposition mask 20B of FIG. 46, and the third deposition mask 20C of FIG. 47. FIG. 48B is a diagram showing a wider range of the stacked body 21 of FIG. 48A. In the embodiment shown in FIGS. 43 to 48B, when the first deposition mask 20A, the second deposition mask 20B, and the third deposition mask 20C are stacked, the first through-hole 25A of the first deposition mask 20A partially overlaps with the second through-hole 25B of the second deposition mask 20B or the third through-hole 25C of the third deposition mask 20C. This allows electrical connection between the first layer 140A and the second layer 140B or the third layer 140C, making it easier to stably control the potential of the second electrode 140. Furthermore, the first layer 140A can partially overlap with the second layer 140B or the third layer 140C. This allows the electrical resistance of the second electrode 140 in the in-plane direction of the substrate 91 to be reduced.

[0229] The overlapping of the first through holes 25A of the first deposition mask 20A, the second through holes 25B of the second deposition mask 20B, and the third through holes 25C of the third deposition mask 20C will be described in detail. As shown in Fig. 48A, when the first deposition mask 20A, the second deposition mask 20B, and the third deposition mask 20C are overlapped, a first mask extended region 27A extending from one side of the first mask basic region 26A in the second direction D2 may overlap a second mask extended region 27B extending from the other side of the second mask basic region 26B in the second direction D2. This allows a first electrode extended region 142A extending from one side of the first electrode basic region 141A in the second direction D2 to overlap a second electrode extended region 142B extending from the other side of the second electrode basic region 141B in the second direction D2. Furthermore, the first mask extended region 27A extending from the other side of the first mask fundamental region 26A in the second direction D2 may overlap with the third mask extended region 27C extending from one side of the third mask fundamental region 26C in the second direction D2. This allows the first electrode extended region 142A extending from the other side of the first electrode fundamental region 141A in the second direction D2 to overlap with the third electrode extended region 142C extending from one side of the third electrode fundamental region 141C in the second direction D2. Furthermore, the second mask extended region 27B extending from one side of the second mask fundamental region 26B in the second direction D2 may overlap with the third mask extended region 27C extending from the other side of the third mask fundamental region 26C in the second direction D2. This allows the electrode second extended region 142B extending from one side of the electrode second basic region 141B in the second direction D2 to overlap with the electrode third extended region 142C extending from the other side of the electrode third basic region 141C in the second direction D2.

[0230] Next, other examples of forming the second electrode 140 of the electronic device 100 using a deposition mask group will be described with reference to Figs. 49 to 54B. In the embodiments shown in Figs. 49 to 54B, parts that can be configured similarly to the embodiments shown in Figs. 36 to 42B will be denoted by the same reference numerals as those used for the corresponding parts in the embodiments shown in Figs. 36 to 42B, and duplicated explanations will be omitted.

[0231] Fig. 49 is a plan view showing the substrate 91 in a state where the second electrode 140 is formed on the first current conducting layer 130A, the second current conducting layer 130B, and the third current conducting layer 130C shown in Fig. 36. Fig. 50 is a cross-sectional view of the electronic device 100 in Fig. 49 taken along line XXXXX-XXXXX extending in the third direction D3. As shown in Fig. 49, the electronic device 100 includes a non-electrode region 150 where the second electrode 140 is not provided.

[0232] 50, the first layer 140A may include an electrode first extension region 142A extending from the electrode first basic region 141A toward the electrode second basic region 141B of the second layer 140B in a third direction D3 intersecting the first direction D1 and the second direction D2. The second layer 140B may include an electrode second extension region 142B extending from the electrode second basic region 141B toward the electrode third basic region 141C of the third layer 140C in the third direction D3. The third layer 140C may include an electrode third extension region 142C extending from the electrode third basic region 141C toward the electrode first basic region 141A of the first layer 140A in the third direction D3. The third direction D3 may be at an angle of 45° with respect to the first direction D1 and the second direction D2.

[0233] Next, a first deposition mask 20A, a second deposition mask 20B, and a third deposition mask 20C used to form the first layer 140A, the second layer 140B, and the third layer 140C of the second electrode 140 shown in FIGS. 49 and 50 will be described.

[0234] 51 is a plan view showing the first vapor deposition mask 20A when viewed from the first surface 201 side. As shown in FIG. 51, the first through-hole 25A may include a first mask extended region 27A extending from the first mask basic region 26A in the third direction D3. In a direction perpendicular to the third direction D3 in which the first mask extended region 27A extends from the first mask extended region 27A, the dimension W12 of the first mask extended region 27A may be smaller than the dimension W11 of the first mask basic region 26A. The relationship between the dimension W12 and the dimension W11 is the same as in the example of FIG. 22 , and therefore will not be described again.

[0235] 52 is a plan view showing the second vapor deposition mask 20B as viewed from the first surface 201 side. As shown in FIG. 52, the second through-hole 25B may include a second mask extended region 27B extending from the second mask basic region 26B in the third direction D3. In a direction perpendicular to the third direction D3 in which the second mask extended region 27B extends from the second mask basic region 26B, the dimension W22 of the second mask extended region 27B may be smaller than the dimension W21 of the second mask basic region 26B. The relationship between the dimension W22 and the dimension W21 is the same as in the example of FIG. 23 , and therefore will not be described again.

[0236] 53 is a plan view showing the third vapor deposition mask 20C as viewed from the first surface 201 side. As shown in FIG. 53, the third through-hole 25C may include a mask third extended region 27C extending from the mask third basic region 26C in the third direction D3. In a direction perpendicular to the third direction D3 in which the mask third extended region 27C extends from the mask third basic region 26C, the dimension W32 of the mask third extended region 27C may be smaller than the dimension W31 of the mask third basic region 26C. The relationship between the dimension W32 and the dimension W31 is the same as in the example of FIG. 24 , and therefore will not be described again.

[0237] FIG. 54A is a diagram showing a stacked body 21 obtained by stacking the first deposition mask 20A of FIG. 51, the second deposition mask 20B of FIG. 52, and the third deposition mask 20C of FIG. 53. FIG. 54B is a diagram showing a wider range of the stacked body 21 of FIG. 54A. In the embodiment shown in FIGS. 49 to 54B, when the first deposition mask 20A, the second deposition mask 20B, and the third deposition mask 20C are stacked, the first through-hole 25A of the first deposition mask 20A partially overlaps with the second through-hole 25B of the second deposition mask 20B or the third through-hole 25C of the third deposition mask 20C. This allows electrical connection between the first layer 140A and the second layer 140B or the third layer 140C, making it easier to stably control the potential of the second electrode 140. Furthermore, the first layer 140A can partially overlap with the second layer 140B or the third layer 140C. This allows the electrical resistance of the second electrode 140 in the in-plane direction of the substrate 91 to be reduced.

[0238] The overlapping of the first through holes 25A of the first deposition mask 20A, the second through holes 25B of the second deposition mask 20B, and the third through holes 25C of the third deposition mask 20C will be described in detail. As shown in FIG. 54A , when the first deposition mask 20A, the second deposition mask 20B, and the third deposition mask 20C are overlapped, the first mask extension region 27A of the first deposition mask 20A may extend from the first mask fundamental region 26A in the third direction D3 so as to partially overlap the second mask fundamental region 26B of the second deposition mask 20B. This allows the first electrode extension region 142A of the first layer 140A to partially overlap the second electrode fundamental region 141B of the second layer 140B. Furthermore, the second mask extension region 27B of the second deposition mask 20B may extend from the second mask fundamental region 26B in the third direction D3 so as to partially overlap the third mask fundamental region 26C of the third deposition mask 20C. This allows the second electrode extension region 142B of the second layer 140B to partially overlap the third electrode basic region 141C of the third layer 140C. Furthermore, the third mask extension region 27C of the third vapor deposition mask 20C may extend from the third mask basic region 26C in the third direction D3 so as to partially overlap the first mask basic region 26A of the first vapor deposition mask 20A. This allows the third electrode extension region 142C of the third layer 140C to partially overlap the first electrode basic region 141A of the first layer 140A.

[0239] Next, other examples of forming the second electrode 140 of the electronic device 100 using a deposition mask group will be described with reference to Figs. 55 to 60. In the embodiments shown in Figs. 55 to 60, parts that can be configured similarly to the embodiments shown in Figs. 17 to 25 will be denoted by the same reference numerals as those used for the corresponding parts in the embodiments shown in Figs. 17 to 25, and duplicated explanations will be omitted.

[0240] FIG. 55 is an enlarged view of a portion of the substrate 91 on which the first current conduction layer 130A, the second current conduction layer 130B, and the third current conduction layer 130C have been formed. In the example shown in FIG. 55, the first current conduction layer 130A, the second current conduction layer 130B, and the third current conduction layer 130C are arranged along the first direction D1 and the second direction D2, respectively. The first current conduction layers 130A and the second current conduction layers 130B are alternately arranged in the second direction D2. Furthermore, rows of the first current conduction layers 130A and the second current conduction layers 130B alternately arranged in the second direction D2 are aligned in the first direction D1. Furthermore, the third current conduction layers 130C are aligned in the second direction D2 between two first current conduction layers 130A adjacent to each other in the first direction D1 and between two second current conduction layers 130B adjacent to each other in the first direction D1. The third current-carrying layer 130C may extend in the second direction D2 so that one current-carrying layer 130 overlaps the first current-carrying layer 130A and the second current-carrying layer 130B when viewed along the first direction D1.

[0241] Fig. 56 is a plan view showing the substrate 91 in a state where the second electrode 140 is formed on the first current-carrying layer 130A, the second current-carrying layer 130B, and the third current-carrying layer 130C shown in Fig. 55. The electronic device 100 includes a non-electrode region 150 where the second electrode 140 is not provided.

[0242] Next, a first deposition mask 20A, a second deposition mask 20B, and a third deposition mask 20C used to form the first layer 140A, the second layer 140B, and the third layer 140C of the second electrode 140 shown in FIG. 56 will be described.

[0243] 57 is a plan view showing the first deposition mask 20A as viewed from the first surface 201 side. As shown in FIG. 57, the first deposition mask 20A may include a plurality of mask first basic regions 26A and a plurality of mask first auxiliary regions 28A arranged along a first direction D1 and a second direction D2. The mask first auxiliary regions 28A have a dimension W13 that is smaller than the dimension W11 of the mask first basic regions 26A in the second direction D2 that is perpendicular to the first direction D1 in which the mask first auxiliary regions 28A extend. The relationship between the dimension W13 and the dimension W11 is the same as in the example of FIG. 22, and therefore description thereof will be omitted. The mask first auxiliary regions 28A may not be connected to the mask first basic regions 26A.

[0244] FIG. 58 is a plan view showing the second vapor deposition mask 20B as viewed from the first surface 201 side. As shown in FIG. 58, the second vapor deposition mask 20B may include a plurality of mask second basic regions 26B and a plurality of mask second auxiliary regions 28B arranged along a first direction D1 and a second direction D2. The mask second auxiliary regions 28B have a dimension W23 that is smaller than the dimension W21 of the mask second basic regions 26B in the second direction D2 that is perpendicular to the first direction D1 in which the mask second auxiliary regions 28B extend. The relationship between the dimension W23 and the dimension W21 is the same as in the example of FIG. 23, and therefore description thereof will be omitted. The mask second auxiliary regions 28B may not be connected to the mask second basic regions 26B.

[0245] Fig. 59 is a plan view showing the third deposition mask 20C when viewed from the first surface 201 side. As shown in Fig. 59, the third deposition mask 20C may include a plurality of third through holes 25C aligned in the first direction D1 and extending in the second direction D2.

[0246] FIG. 60 is a diagram showing a stack 21 obtained by stacking the first deposition mask 20A of FIG. 57, the second deposition mask 20B of FIG. 58, and the third deposition mask 20C of FIG. 59. In the embodiment shown in FIGS. 55 to 60, when the first deposition mask 20A, the second deposition mask 20B, and the third deposition mask 20C are stacked, the first through-hole 25A of the first deposition mask 20A partially overlaps with the second through-hole 25B of the second deposition mask 20B or the third through-hole 25C of the third deposition mask 20C. This allows the first layer 140A to be electrically connected to the second layer 140B or the third layer 140C, making it easier to stably control the potential of the second electrode 140. Furthermore, the first layer 140A can partially overlap with the second layer 140B or the third layer 140C. This allows the electrical resistance of the second electrode 140 in the in-plane direction of the substrate 91 to be reduced.

[0247] The overlapping of the first through holes 25A of the first deposition mask 20A, the second through holes 25B of the second deposition mask 20B, and the third through holes 25C of the third deposition mask 20C will be described in detail. As shown in FIG. 60 , when the first deposition mask 20A, the second deposition mask 20B, and the third deposition mask 20C are overlapped, the first mask auxiliary region 28A of the first deposition mask 20A may extend between two adjacent second mask fundamental regions 26B in the first direction D1 so as to partially overlap them. This allows the first electrode auxiliary region 143A of the first layer 140A to partially overlap two adjacent second electrode fundamental regions 141B in the first direction D1. Furthermore, the second mask auxiliary region 28B of the second deposition mask 20B may extend between two adjacent first mask fundamental regions 26A in the first direction D1 so as to partially overlap them. This allows the electrode second auxiliary region 143B of the second layer 140B to partially overlap two electrode first basic regions 141A adjacent to each other in the first direction D1.

[0248] 60, the third through holes 25C of the third vapor deposition mask 20C may extend in the second direction D2 so as to overlap with the mask first auxiliary regions 28A and the mask second auxiliary regions 28B that are alternately arranged in the second direction D2. This allows the third layer 140C to overlap with the electrode first auxiliary regions 143A and the electrode second auxiliary regions 143B that are alternately arranged in the second direction D2.

[0249] Next, other examples of forming the second electrode 140 of the electronic device 100 using a deposition mask group will be described with reference to Figs. 61 to 66. In the embodiments shown in Figs. 61 to 66, parts that can be configured similarly to the embodiments shown in Figs. 17 to 25 will be denoted by the same reference numerals as those used for the corresponding parts in the embodiments shown in Figs. 17 to 25, and duplicated explanations will be omitted.

[0250] 61 is an enlarged view of a portion of the substrate 91 on which the first current conducting layer 130A, the second current conducting layer 130B, and the third current conducting layer 130C have been formed. In the example shown in FIG. 61, the first current conducting layer 130A, the second current conducting layer 130B, and the third current conducting layer 130C are arranged along the first direction D1 and the second direction D2, respectively. The position of the first current conducting layer 130A in the first direction D1 is shifted from the second current conducting layer 130B by a distance that is half the arrangement period of the first current conducting layer 130A in the first direction D1. The position of the first current conducting layer 130A in the second direction D2 is shifted from the second current conducting layer 130B by a distance that is half the arrangement period of the first current conducting layer 130A in the second direction D2. The third current layer 130C is located between two adjacent first current layers 130A in the first direction D1, between two adjacent first current layers 130A in the second direction D2, between two adjacent second current layers 130B in the first direction D1, and between two adjacent second current layers 130B in the second direction D2.

[0251] Fig. 62 is a plan view showing the substrate 91 in a state where the second electrode 140 is formed on the first current-carrying layer 130A, the second current-carrying layer 130B, and the third current-carrying layer 130C shown in Fig. 61. The electronic device 100 includes a non-electrode region 150 where the second electrode 140 is not provided.

[0252] Next, a first deposition mask 20A, a second deposition mask 20B, and a third deposition mask 20C used to form the first layer 140A, the second layer 140B, and the third layer 140C of the second electrode 140 shown in FIG. 62 will be described.

[0253] 63 is a plan view showing the first deposition mask 20A as viewed from the first surface 201 side. As shown in FIG. 63, the first deposition mask 20A includes a plurality of first mask fundamental regions 26A arranged along a first direction D1 and a second direction D2. The first deposition mask 20A may include a first mask extended region 27A extending from the first mask fundamental region 26A to one side in the first direction D1 and a first mask extended region 27A extending from the first mask fundamental region 26A to the other side in the first direction D1. The first deposition mask 20A may also include a first mask extended region 27A extending from the first mask fundamental region 26A to one side in the second direction D2 and a first mask extended region 27A extending from the first mask fundamental region 26A to the other side in the second direction D2. In the direction perpendicular to the first direction D1 or the second direction D2 in which the mask first extended region 27A extends from the mask first basic region 26A, the dimension W12 of the mask first extended region 27A may be smaller than the dimension W11 of the mask first basic region 26A. The relationship between the dimension W12 and the dimension W11 is the same as in the example of FIG. 22, and therefore will not be described here.

[0254] 63, the first through-holes 25A of the first vapor deposition mask 20A may include mask first basic regions 26A to which no mask first extended regions 27A are connected. For example, the mask first basic regions 26A to which no mask first extended regions 27A are connected and the mask first basic regions 26A to which the mask first extended regions 27A are connected may be arranged alternately in the first direction D1 and the second direction D2.

[0255] 64 is a plan view showing the second vapor deposition mask 20B as viewed from the first surface 201 side. As shown in FIG. 64, the second vapor deposition mask 20B includes a plurality of second mask basic regions 26B arranged along a first direction D1 and a second direction D2. The second vapor deposition mask 20B may include a second mask extended region 27B extending from the second mask basic region 26B to one side of a third direction D3 intersecting the first direction D1 and the second direction D2, and a second mask extended region 27B extending from the second mask basic region 26B to the other side of the third direction D3. The third direction D3 may be a direction that forms an angle of 45° with respect to the first direction D1 and the second direction D2. In the direction perpendicular to the third direction D3 in which the mask second extended region 27B extends from the mask second basic region 26B, the dimension W22 of the mask second extended region 27B may be smaller than the dimension W21_1 of the mask second basic region 26B. The relationship between the dimension W22 and the dimension W21_1 is similar to the relationship between the dimension W22 and the dimension W21 in the example of FIG. 23, and therefore description thereof will be omitted.

[0256] 64, the second through-holes 25B of the second vapor deposition mask 20B may include second mask basic regions 26B to which second mask extended regions 27B are not connected. For example, the second mask basic regions 26B to which second mask extended regions 27B are not connected and the second mask basic regions 26B to which second mask extended regions 27B are connected may be arranged alternately in the first direction D1 and the second direction D2. In the direction perpendicular to the first direction D1 or the second direction D2 in which the mask second auxiliary region 28B extends, the dimension W23 of the mask second auxiliary region 28B may be smaller than the dimension W21_2 of the mask second basic region 26B. The relationship between the dimension W23 and the dimension W21_2 is similar to the relationship between the dimension W23 and the dimension W21 in the example of FIG. 23, and therefore description thereof will be omitted.

[0257] 64, the second through-holes 25B of the second vapor deposition mask 20B may include a plurality of mask second auxiliary regions 28B extending in the first direction D1 or the second direction D2. The mask second auxiliary regions 28B may not be connected to the mask second basic regions 26B.

[0258] 65 is a plan view showing the third deposition mask 20C as viewed from the first surface 201 side. As shown in FIG. 65, the third deposition mask 20C includes a plurality of mask third basic regions 26C arranged along the third direction D3 and the fourth direction D4. The third deposition mask 20C may include a plurality of mask third auxiliary regions 28C located between two adjacent mask third basic regions 26C in the third direction D3 and extending in a fourth direction D4 perpendicular to the third direction D3. Furthermore, the third deposition mask 20C may include a plurality of mask third auxiliary regions 28C located between two adjacent mask third basic regions 26C in the fourth direction D4 and extending in the third direction D3. In a direction perpendicular to the third direction D3 or the fourth direction D4 in which the mask third auxiliary region 28C extends, the dimension W33 of the mask third auxiliary region 28C may be smaller than the dimension W31 of the mask third basic region 26C. The relationship between the dimension W33 and the dimension W31 is similar to the relationship between the dimension W13 and the dimension W11 in the example of FIG. 22, and therefore description thereof will be omitted.

[0259] FIG. 66 is a diagram showing a stack 21 obtained by stacking the first deposition mask 20A of FIG. 63 , the second deposition mask 20B of FIG. 64 , and the third deposition mask 20C of FIG. 65 . In the embodiment shown in FIGS. 61 to 66 , when the first deposition mask 20A, the second deposition mask 20B, and the third deposition mask 20C are stacked, the first through-hole 25A of the first deposition mask 20A partially overlaps with the second through-hole 25B of the second deposition mask 20B or the third through-hole 25C of the third deposition mask 20C. This allows the first layer 140A to be electrically connected to the second layer 140B or the third layer 140C, making it easier to stably control the potential of the second electrode 140. Furthermore, the first layer 140A can partially overlap with the second layer 140B or the third layer 140C. This allows the electrical resistance of the second electrode 140 in the in-plane direction of the substrate 91 to be reduced.

[0260] The overlapping of the first through holes 25A of the first deposition mask 20A, the second through holes 25B of the second deposition mask 20B, and the third through holes 25C of the third deposition mask 20C will be described in detail. As shown in Fig. 66, when the first deposition mask 20A, the second deposition mask 20B, and the third deposition mask 20C are overlapped, the first mask extension region 27A of the first deposition mask 20A may extend in the first direction D1 or the second direction D2 from the first mask basic region 26A so as to partially overlap the third mask basic region 26C of the third deposition mask 20C. This allows the first electrode extension region 142A of the first layer 140A to partially overlap the third electrode basic region 141C of the third layer 140C.

[0261] 66, the second mask extension region 27B of the second vapor deposition mask 20B may extend in the third direction D3 from the second mask fundamental region 26B so as to partially overlap the third mask fundamental region 26C of the third vapor deposition mask 20C. This allows the second electrode extension region 142B of the second layer 140B to partially overlap the third electrode fundamental region 141C of the third layer 140C. The second mask auxiliary region 28B of the second vapor deposition mask 20B may extend in the first direction D1 or the second direction D2 between the first mask fundamental region 26A of the first vapor deposition mask 20A and the third mask fundamental region 26C of the third vapor deposition mask 20C so as to partially overlap the first mask fundamental region 26A of the first vapor deposition mask 20A and the third mask fundamental region 26C of the third vapor deposition mask 20C. This allows the electrode second auxiliary region 143B of the second layer 140B to partially overlap the electrode first basic region 141A of the first layer 140A and the electrode third basic region 141C of the third layer 140C.

[0262] 66, the mask third auxiliary region 28C of the third deposition mask 20C may extend in the third direction D3 or the fourth direction D4 between the mask first fundamental region 26A of the first deposition mask 20A and the mask second fundamental region 26B of the second deposition mask 20B so as to partially overlap them. This allows the electrode third auxiliary region 143C of the third layer 140C to partially overlap the electrode first fundamental region 141A of the first layer 140A and the electrode second fundamental region 141B of the second layer 140B.

[0263] Next, other examples of forming the second electrode 140 of the electronic device 100 using a deposition mask group will be described with reference to Figs. 67 to 70. In the embodiments shown in Figs. 67 to 70, parts that can be configured similarly to the embodiments shown in Figs. 17 to 25 will be given the same reference numerals as those used for the corresponding parts in the embodiments shown in Figs. 17 to 25, and duplicated explanations will be omitted.

[0264] FIG. 67 is a plan view showing the substrate 91 in a state where the second electrode 140 is formed on the first current-carrying layer 130A, the second current-carrying layer 130B, and the third current-carrying layer 130C shown in FIG.

[0265] Next, a deposition mask group used to form the first layer 140A, the second layer 140B, and the third layer 140C of the second electrode 140 shown in Fig. 67 will be described. In the embodiment shown in Figs. 17 to 25, an example in which three deposition masks are used will be described. In the present embodiment, an example in which two deposition masks are used will be described. The deposition mask group in this embodiment includes a first deposition mask 20A and a second deposition mask 20B.

[0266] FIG. 68 is a plan view showing the first deposition mask 20A when viewed from the first surface 201 side. As shown in FIG. 68, the first deposition mask 20A may include a plurality of mask first basic regions 26A and a plurality of mask first auxiliary regions 28A arranged along a first direction D1 and a second direction D2. In a direction perpendicular to the first direction D1 in which the mask first auxiliary regions 28A extend, a dimension W13 of the mask first auxiliary regions 28A may be smaller than a dimension W11 of the mask first basic regions 26A. The relationship between the dimension W13 and the dimension W11 is the same as in the example of FIG. 22 , and therefore description thereof will be omitted. The mask first auxiliary regions 28A may not be connected to the mask first basic regions 26A.

[0267] As shown in Fig. 68, two mask first auxiliary regions 28A may be arranged side by side in the first direction D1 between two mask first basic regions 26A adjacent to each other in the second direction D2. As shown in Fig. 67 and Fig. 68, the electrode first basic region 141A formed corresponding to the mask first basic region 26A may overlap both the first current conducting layer 130A and the second current conducting layer 130B adjacent to each other in the first direction D1.

[0268] Fig. 69 is a plan view showing the second vapor deposition mask 20B as viewed from the first surface 201 side. As shown in Fig. 69, the second vapor deposition mask 20B may include a plurality of mask second basic regions 26B arranged along the first direction D1 and the second direction D2. As shown in Figs. 67 and 69, the electrode second basic regions 141B formed corresponding to the mask second basic regions 26B may overlap the third current-carrying layer 130C.

[0269] 69, the second vapor deposition mask 20B may include a mask second extended region 27B extending from the mask second basic region 26B to one side in the second direction D2, and a mask second extended region 27B extending from the mask second basic region 26B to the other side in the second direction D2. In a direction perpendicular to the second direction D2 in which the mask second extended region 27B extends from the mask second basic region 26B, a dimension W22 of the mask second extended region 27B may be smaller than a dimension W21_1 of the mask second basic region 26B. The relationship between the dimension W22 and the dimension W21_1 is similar to the relationship between the dimension W22 and the dimension W21 in the example of FIG. 23, and therefore description thereof will be omitted.

[0270] 69, the second vapor deposition mask 20B may include a plurality of mask third basic regions 26C arranged along the first direction D1 and the second direction D2. In the direction perpendicular to the first direction D1 in which the mask second auxiliary regions 28B extend, the dimension W23 of the mask second auxiliary regions 28B may be smaller than the dimension W21_2 of the mask second basic regions 26B. The relationship between the dimension W23 and the dimension W21_2 is similar to the relationship between the dimension W23 and the dimension W21 in the example of FIG. 23, and therefore description thereof will be omitted. The mask second auxiliary regions 28B may not be connected to the mask first auxiliary regions 28A.

[0271] FIG. 70 is a diagram showing a stack 21 obtained by stacking the first deposition mask 20A of FIG. 68 and the second deposition mask 20B of FIG. 69. In the embodiment shown in FIGS. 67 to 70, when the first deposition mask 20A and the second deposition mask 20B are stacked, the first through-holes 25A of the first deposition mask 20A and the second through-holes 25B of the second deposition mask 20B partially overlap. This allows the first layer 140A and the second layer 140B to be electrically connected, making it easier to stably control the potential of the second electrode 140. Furthermore, the first layer 140A and the second layer 140B can partially overlap. This reduces the electrical resistance of the second electrode 140 in the in-plane direction of the substrate 91.

[0272] The overlap between the first through holes 25A of the first deposition mask 20A and the second through holes 25B of the second deposition mask 20B will be described in detail. As shown in Fig. 70, when the first deposition mask 20A and the second deposition mask 20B are overlapped, the first mask auxiliary region 28A of the first deposition mask 20A may extend in the first direction D1 so as to partially overlap two second mask basic regions 26B adjacent to each other in the first direction D1. This allows the first electrode auxiliary region 143A of the first layer 140A, which is formed corresponding to the first mask auxiliary region 28A, to partially overlap the second electrode basic region 141B of the second layer 140B.

[0273] 70 , the second mask extension region 27B of the second vapor deposition mask 20B may extend in the second direction D2 from the second mask fundamental region 26B so as to partially overlap the first mask fundamental region 26A of the first surface 201. This allows the second electrode extension region 142B of the second layer 140B to partially overlap the first electrode fundamental region 141A of the first layer 140A. Furthermore, the second mask auxiliary region 28B of the second vapor deposition mask 20B may extend in the first direction D1 so as to partially overlap two first mask fundamental regions 26A adjacent to each other in the first direction D1. This allows the second electrode auxiliary region 143B to partially overlap two first electrode fundamental regions 141A adjacent to each other in the first direction D1.

[0274] An example of the shape of the first through hole 25A of the first vapor deposition mask 20A will be described with reference to Fig. 71. The first through hole 25A shown in Fig. 71 is the same as the first through hole 25A shown in Fig. 13 except for the shape of the corners.

[0275] As shown in FIG. 71 , the corners of the mask first basic region 26A of the first through hole 25A may include a curved contour. The corner is the intersection of two straight lines that form the contour of the first through hole 25A. Although not shown, the corners of the mask first basic region 26A of the first through hole 25A in each of the above-described embodiments may also include a curved contour. Although not shown, the corners of other regions, such as the mask first extended region 27A and the mask first auxiliary region 28A in each of the above-described embodiments, may also include a curved contour. Although not shown, the corners of the region of the second through hole 25B of the second vapor deposition mask 20B and the region of the third through hole 25C of the third vapor deposition mask 20C in each of the above-described embodiments may also include a curved contour.

[0276] Next, an example of the configuration of the electronic device 100 will be described with reference to Fig. 72. When the electronic device 100 is an organic EL display device, the elements 110 function as pixels. The electronic device 100 includes a display region 105 including the elements 110 functioning as pixels. The display region 105 may include a first display region 106 and a second display region 107.

[0277] The area of ​​the first display region 106 may be smaller than the area of ​​the second display region 107. The first display region 106 may include a non-electrode region 150 where the second electrode 140 is not provided. This can increase the light transmittance of the electronic device 100 compared to when the second electrode 140 is formed over the entire first display region 106. The second electrode 140 in the first display region 106 can be formed by using the above-described deposition mask group.

[0278] The second display region 107 may include a non-electrode region 150 where the second electrode 140 is not provided, similar to the first display region 106. In this case, the second electrode 140 in the second display region 107 can be formed by using the above-described deposition mask group. The shape and arrangement of the through holes 25 in the deposition mask 20 used to form the second electrode 140 in the second display region 107 may be the same as or different from the shape and arrangement of the through holes 25 in the deposition mask 20 used to form the second electrode 140 in the first display region 106.

[0279] One deposition mask 20 may include a through-hole 25 for forming the second electrode 140 in the first display region 106 and a through-hole 25 for forming the second electrode 140 in the second display region 107.

[0280] The second display region 107 may not include a non-electrode region 150 where the second electrode 140 is not provided. In other words, the second electrode 140 may be formed over the entire area of ​​the second display region 107. In this way, the technique of increasing the light transmittance by forming a non-electrode region 150 in the electronic device 100 may be applied to a part of the area of ​​the electronic device 100 rather than the entire area.

[0281] An example of the configuration of the electronic device 100 will be described with reference to FIG.

[0282] 72 shows an example in which the boundary between first display region 106 and second display region 107 is a straight line in a planar view. However, this is not limiting, and as shown in FIG. 73, the boundary between first display region 106 and second display region 107 may include a curved line in a planar view.

Claims

1. A first deposition mask having a plurality of first through holes including regions arranged along a first direction and a second direction intersecting the first direction; a second vapor deposition mask having a plurality of second through holes arranged along the first direction and the second direction, when the first vapor deposition mask and the second vapor deposition mask are superimposed on each other, the first through holes and the second through holes partially overlap each other, the first vapor deposition mask is for forming, by a vapor deposition method, a first layer of the second electrode of an electronic device having: a substrate; a plurality of first electrodes arranged along an in-plane direction of the substrate; a current-carrying layer located on the first electrodes; and a second electrode including a region located on the current-carrying layer; The second deposition mask is a deposition mask group for forming a second layer of the second electrode of the electronic device by a deposition method.

2. the plurality of first through holes include a plurality of mask first basic regions arranged along the first direction and the second direction; The deposition mask group according to claim 1 , wherein the second through-hole extends in the first direction or the second direction so as to overlap two of the mask first basic regions adjacent to each other in the first direction or the second direction.

Images