deposition mask

Abstract

To provide a vapor deposition mask with a suppressed distortion caused in a mask pattern.SOLUTION: A vapor deposition mask has a mask part having multiple openings, a holding frame for holding the mask part, and a connection part for connecting the mask part with the holding part, the connection part including a first part contacting the mask part in a first thickness, and a second part contacting the mask part in a second thickness thinner than the first thickness. The second part may be positioned more inside the mask part than the first part.SELECTED DRAWING: Figure 3B

Description

[Technical Field]

[0001] An embodiment of the present invention relates to a deposition mask. [Background technology]

[0002] Typically, in the process of manufacturing organic EL display devices, vacuum deposition is used to form a layer composed of organic EL material (organic EL layer). In vacuum deposition, a deposition mask is placed close to the substrate to be processed, and the organic EL material is deposited onto the substrate through the deposition mask. The deposition mask has multiple openings. The organic EL material passes through the multiple openings to reach the substrate, making it possible to selectively form the organic EL layer at positions corresponding to the multiple openings.

[0003] Vapor deposition masks are divided into fine metal masks (FMMs), in which an opening pattern is formed by etching, and electro-fine forming masks (EFMs), in which an opening pattern is formed by electroforming (electroforming). For example, Patent Document 1 discloses a method in which a mask part having a high-definition opening pattern is formed by electroforming, and the formed mask part is fixed to a frame part by electroforming. [Prior art documents] [Patent documents]

[0004] [Patent Document 1] Japanese Patent Application Publication No. 2017-210633 Summary of the Invention [Problem to be solved by the invention]

[0005] In the above-described conventional technology, a mask pattern (electroformed layer) is formed on a matrix made of a metal plate, a frame is bonded to the mask pattern, and the frame and mask pattern are connected via the metal layer. The matrix is ​​then peeled off from the mask pattern, completing a deposition mask in which the frame and mask pattern are connected via the metal layer. However, when peeling off the matrix from the mask pattern, large vertical stress may be generated near the area where the thin-film mask pattern and the metal layer contact (i.e., near the edge of the metal layer), which may cause distortion of the mask pattern. Such distortion of the mask pattern may lead to misalignment of openings (deposition holes) formed in the mask pattern, potentially reducing deposition accuracy.

[0006] An object of one embodiment of the present invention is to provide a deposition mask that suppresses distortion occurring in a mask pattern.

[0007] An object of one embodiment of the present invention is to suppress the occurrence of distortion in a mask portion due to peeling of a matrix. [Means for solving the problem]

[0008] In one embodiment of the present invention, the deposition mask includes a mask portion having a plurality of openings, a holding frame that holds the mask portion, and a connecting portion that connects the mask portion and the holding frame, and the connecting portion includes a first portion that contacts the mask portion with a first film thickness and a second portion that contacts the mask portion with a second film thickness that is thinner than the first film thickness. [Brief explanation of the drawings]

[0009] [Figure 1] FIG. 1 is a plan view illustrating a configuration of a deposition mask according to a first embodiment. [Figure 2] FIG. 2 is a cross-sectional view showing the configuration of a deposition mask in the first embodiment. [Figure 3A] FIG. 2 is a plan view showing an enlarged configuration of a part of the deposition mask according to the first embodiment. [Figure 3B] FIG. 3B is a cross-sectional view showing the configuration taken along line BB' in FIG. 3A. [Figure 4] 3A to 3C are cross-sectional views illustrating a method for manufacturing the deposition mask according to the first embodiment. [Figure 5] 3A to 3C are cross-sectional views illustrating a method for manufacturing the deposition mask according to the first embodiment. [Figure 6] 3A to 3C are cross-sectional views illustrating a method for manufacturing the deposition mask according to the first embodiment. [Figure 7] 3A to 3C are cross-sectional views illustrating a method for manufacturing the deposition mask according to the first embodiment. [Figure 8] 3A to 3C are cross-sectional views illustrating a method for manufacturing the deposition mask according to the first embodiment. [Figure 9] 3A to 3C are cross-sectional views illustrating a method for manufacturing the deposition mask according to the first embodiment. [Figure 10] 3A to 3C are cross-sectional views illustrating a method for manufacturing the deposition mask according to the first embodiment. [Figure 11] 3A to 3C are cross-sectional views illustrating a method for manufacturing the deposition mask according to the first embodiment. [Figure 12] 3A to 3C are cross-sectional views illustrating a method for manufacturing the deposition mask according to the first embodiment. [Figure 13] 3A to 3C are cross-sectional views illustrating a method for manufacturing the deposition mask according to the first embodiment. [Figure 14] 10A to 10C are cross-sectional views illustrating a method for manufacturing a vapor deposition mask according to Modification 1 of the first embodiment. [Figure 15] 10A to 10C are cross-sectional views illustrating a method for manufacturing a vapor deposition mask according to Modification 1 of the first embodiment. [Figure 16] 10A to 10C are cross-sectional views illustrating a method for manufacturing a vapor deposition mask according to Modification 2 of the first embodiment. [Figure 17] 10A to 10C are cross-sectional views illustrating a method for manufacturing a vapor deposition mask according to Modification 2 of the first embodiment. [Figure 18] FIG. 10 is a plan view showing the configuration of a deposition mask according to a second embodiment. [Figure 19] FIG. 10 is a cross-sectional view showing the configuration of a deposition mask in a second embodiment. DETAILED DESCRIPTION OF THE INVENTION

[0010] Hereinafter, embodiments of the present invention will be described with reference to the drawings. However, the present invention can be embodied in various forms without departing from the spirit of the present invention, and should not be construed as being limited to the description of the embodiments exemplified below. To clarify the explanation, the drawings may show the width, thickness, shape, etc. of each part more schematically than the actual form, but these are merely examples and do not limit the interpretation of the present invention. In this specification and each drawing, elements having the same functions as those described with reference to the previous drawings may be assigned the same reference numerals, and redundant explanations may be omitted.

[0011] In this specification and claims, when expressing an aspect of placing another structure on top of a certain structure, the term "on top" is used, unless otherwise specified, to include both a case in which another structure is placed directly on top of a certain structure so as to be in contact with the certain structure, and a case in which another structure is placed above a certain structure via yet another structure.

[0012] In this specification, unless otherwise specified, expressions such as "α includes A, B, or C," "α includes any one of A, B, and C," and "α includes one selected from the group consisting of A, B, and C" do not exclude cases where α includes multiple combinations of A to C. Furthermore, these expressions do not exclude cases where α includes other elements.

[0013] First Embodiment [Configuration of deposition mask] Fig. 1 is a plan view showing the configuration of a deposition mask 100 according to the first embodiment of the present invention. Fig. 2 is a cross-sectional view showing the configuration of the deposition mask 100 according to the first embodiment of the present invention. Specifically, the cross-sectional view shown in Fig. 2 shows a cross section taken along line A-A' in Fig. 1. As shown in Figs. 1 and 2, the deposition mask 100 has a thin-film mask portion 110 formed by electroforming, a holding frame 120 that holds the mask portion 110, and a connection portion 130 that connects the mask portion 110 and the holding frame 120.

[0014] The mask section 110 has a plurality of panel regions 115. When evaporating the organic EL material, a substrate to be evaporated (not shown) is arranged so that the display region of the organic EL display device overlaps with each panel region 115. A plurality of openings 111 are provided in each panel region 115 in accordance with the pixel pitch of the organic EL display device. Areas of the mask section 110 other than the openings 111 are called non-openings 112. The non-openings 112 are areas surrounding each opening 111. The non-openings 112 correspond to portions of each panel region 115 that block the evaporation material.

[0015] During deposition, the deposition mask 100 and the substrate to be deposited are aligned so that the deposition regions (regions where a thin film is to be formed) of the substrate to be deposited overlap the openings 111, and the non-deposition regions of the substrate to be deposited overlap the non-openings 112. Vapor of the deposition material passes through the openings 111 and reaches the substrate to be deposited, whereby the deposition material is deposited in the deposition regions to form a thin film.

[0016] The holding frame 120 is provided on the outer periphery of the mask unit 110 so as to surround the multiple panel regions 115 of the mask unit 110 in a plan view. In other words, the holding frame 120 functions as a member that holds the thin-film-like mask unit 110. Note that in FIG. 1, the holding frame 120 is provided only on the outer periphery of the mask unit 110. However, this is not limiting, and the holding frame 120 may be provided in a lattice pattern.

[0017] The connection portion 130 is a member that connects the mask portion 110 and the holding frame 120. In the deposition mask 100 of this embodiment, the mask portion 110 and the holding frame 120 are connected via the connection portion 130. That is, as shown in FIG. 2, the mask portion 110 and the holding frame 120 are not directly connected. In this embodiment, the connection portion 130 has at least two or more portions that are in contact with the mask portion 110 and have relatively different film thicknesses. This point will be described later.

[0018] In the above configuration, the mask portion 110 is formed of a thin-film plating layer. The mask portion 110 of this embodiment is a thin film formed by electroplating. The thickness d1 of the mask portion 110 is, for example, 3 μm to 20 μm (preferably, 5 μm to 10 μm). In this embodiment, the thickness of the mask portion 110 is 5 μm. The holding frame 120 is formed of an alloy such as invar. Invar alloys have a small thermal expansion coefficient at room temperature, which has the advantage of reducing stress on the mask portion 110 in an environment where temperature changes occur during the deposition process. The thickness d2 of the holding frame 120 is, for example, 0.5 mm to 1.5 mm (preferably, 0.8 mm to 1.2 mm). In this embodiment, the thickness of the holding frame 120 is 1 mm. Although not specifically shown in FIG. 2 , the holding frame 120 may be formed of a single layer or a laminate of thin plate materials.

[0019] In this embodiment, invar is used as the metal material for the mask unit 110, the holding frame 120, and the connecting unit 130. Invar has a smaller thermal expansion coefficient at room temperature and at temperatures during the organic EL device formation process than nickel and the like, and its thermal expansion coefficient is close to that of glass. Therefore, by using invar as the material for the deposition mask 100, the influence of thermal expansion between the mask unit 110 and a glass substrate can be suppressed in the manufacturing process of the deposition mask 100, which will be described later. Furthermore, during deposition, there is an advantage in that misalignment due to thermal expansion between the deposition mask and the deposition target substrate (usually a glass substrate) is reduced, thereby improving the positional accuracy of deposition. However, this is not limiting, and other materials other than invar may be used as long as they have a thermal expansion coefficient close to that of glass. Furthermore, the holding frame 120 may be made of a metal material different from that of the mask unit 110 and the connecting unit 130.

[0020] [Configuration of connection part 130] Fig. 3A is a plan view showing an enlarged configuration of a part of the deposition mask 100 of the first embodiment. Specifically, Fig. 3A corresponds to an enlarged plan view of the area surrounded by the frame line 10 in Fig. 1. Fig. 3B is a cross-sectional view showing the configuration taken along line B-B' in Fig. 3A. For ease of explanation, only a metal layer 130b, which will be described later, is hatched in Fig. 3A.

[0021] 3A and 3B, the connection part 130 of this embodiment is composed of a metal layer 130a and a metal layer 130b. The metal layer 130b is laminated on the metal layer 130a. More specifically, the metal layer 130b is provided so as to cover the metal layer 130a. In this embodiment, the metal layer 130a and the metal layer 130b are composed of the same metal layer, so that the structure in which the metal layer 130a and the metal layer 130b are integrated essentially functions as the connection part 130. However, this is not a limitation, and the metal layer 130a and the metal layer 130b may be composed of different metal layers.

[0022] As shown in FIG. 3B, the connection portion 130 has a first portion 131 connected to the mask portion 110 by a metal layer 130a and a second portion 132 connected to the mask portion 110 by a metal layer 130b. Specifically, the first portion 131 is configured with a laminated structure of the metal layer 130a and the metal layer 130b, and the second portion 132 is configured with the metal layer 130b. In other words, the connection portion 130 includes the first portion 131 that contacts the mask portion 110 with a first film thickness (the total film thickness of the metal layer 130a and the metal layer 130b) and the second portion 132 that contacts the mask portion 110 with a second film thickness (the film thickness of the metal layer 130b) that is thinner than the first film thickness. On the other hand, as shown in FIG. 3B, the connection portion 130 is connected to the side surface of the holding frame 120 by the metal layer 130a. Specifically, the connection portion 130 contacts the side surface of the holding frame 120 with the first film thickness described above.

[0023] In this embodiment, the portion of the connection portion 130 that contacts the mask portion 110 is composed of multiple portions having different film thicknesses. Specifically, the first portion 131 is located closer to the end of the mask portion 110, and the second portion 132 is located closer to the inside of the mask portion 110 (closer to the panel region 115) than the first portion 131. In this way, in this embodiment, the end of the connection portion 130 is gradually thinner toward the inside of the mask portion 110. In other words, in this embodiment, a metal layer 130b that is thinner than the metal layer 130a is provided so as to cover the boundary between the metal layer 130a and the mask portion 110 in a plan view.

[0024] That is, the physical strength of the deposition mask 100 is highest at the holding frame 120 and lowest at the mask portion 110, with the connecting portion 130 being intermediate between them. At this time, the boundary between the holding frame 120 and the connecting portion 130 and the boundary between the connecting portion 130 and the mask portion 110 are very susceptible to breakage due to the large difference in strength between the respective members, and this is particularly noticeable at the boundary between the connecting portion 130 and the mask portion 110.

[0025] As described above, in this embodiment, by extending the metal layer 130b from the end of the metal layer 130a toward the panel region 115 in a plan view, it is possible to realize a structure in which the film thickness of the connection portion 130 gradually decreases toward the inside of the mask portion 110. With this structure, it is possible to alleviate the vertical stress generated in the mask portion 110 near the end of the metal layer 130a, and to reduce distortion generated in the mask portion 110. In other words, it is possible to suppress the occurrence of distortion in the mask portion 110 due to peeling of the matrix during the manufacturing of the deposition mask 100.

[0026] 3B, the thickness of metal layer 130b may be set to 50% to 100% of the thickness of the metal layer constituting mask portion 110. For example, if the thickness of mask portion 110 is 5 μm, the thickness of metal layer 130b may be set to 2.5 μm to 5 μm.

[0027] Furthermore, in this embodiment, the length (X) of the second portion 132 is set to 10 μm or more (preferably 20 μm or more, and more preferably 30 μm or more). According to the findings of the inventors, the longer the length of the second portion 132, the more the normal stress is reduced, but when the length of the second portion 132 exceeds 30 μm, no change in the normal stress was observed. In other words, if the length of the second portion 132 is set to 30 μm or more, the normal stress can be sufficiently reduced.

[0028] [Method of manufacturing the deposition mask 100] A method for manufacturing the deposition mask 100 of this embodiment will be described in detail with reference to the drawings. Figures 4 to 12 are diagrams showing the method for manufacturing the deposition mask 100 of the first embodiment of the present invention.

[0029] 4, a seed layer 210 and a resist pattern 220 are formed on a substrate 200. In this embodiment, a glass substrate is used as the substrate 200. However, the present invention is not limited to this example, and the substrate 200 may also be a metal substrate or a ceramic substrate.

[0030] The seed layer 210 is a metal layer provided for growing a plating layer. In this embodiment, a nickel alloy (specifically, Invar) is used as the material for the plating layer 230a described below, and therefore a metal layer containing copper (Cu) is used as the seed layer 210. However, this is not the only example, and other metal layers may be used as long as they can function as a seed layer. As described above, when a metal substrate is used as the substrate 200, the plating layer 230a can be grown directly on the surface of the substrate 200, and therefore the seed layer 210 does not need to be provided.

[0031] The seed layer 210 may be formed by sputtering or CVD (Chemical Vapor Deposition). The thickness of the seed layer 210 may be sufficient to ensure the conductivity required for growing the plating layer 230 described below. For example, the thickness of the seed layer 210 may be in the range of 50 nm to 500 nm.

[0032] The resist pattern 220 is formed by applying a photosensitive resin material onto the seed layer 210, followed by exposure and development (etching) processes. The region where the resist pattern 220 is formed corresponds to the region where the multiple openings 111 of the mask portion 110 shown in Figures 1 and 2 are provided. The resist pattern 220 may be formed using a dry film resist (DFR).

[0033] 5, a plating layer 230 is formed in an area where the resist pattern 220 is not disposed. That is, the area where the plating layer 230 is formed corresponds to an area where the non-opening portions 112 of the mask portion 110 shown in FIGS. 1 and 2 are provided. In this embodiment, before forming the plating layer 230, the surface of the seed layer 210 is pretreated with a release agent. As the release agent, for example, Nikkanontack (registered trademark) manufactured by Nippon Chemical Industry Co., Ltd. may be used.

[0034] In this embodiment, the plating layer 230 is a metal layer made of a nickel alloy (specifically, invar). In this embodiment, electroplating is performed by passing a current through the seed layer 210 in an aqueous solution containing metal ions of the nickel alloy. When a current is passed through the seed layer 210, the plating layer 230 is formed on the surface of the seed layer 210. The thickness of the plating layer 230 can be adjusted by controlling the electroplating time. In this embodiment, the thickness of the plating layer 230 is adjusted to a range of 3 μm to 20 μm (preferably, 5 μm to 10 μm). Specifically, in this embodiment, the thickness of the plating layer 230 is set to 5 μm. In this embodiment, an example in which the plating layer 230 is formed of invar has been described, but the present invention is not limited to this example, and other metal materials that can be used for electroplating may be used.

[0035] After the plating layer 230 is formed, the resist pattern 220 is removed as shown in FIG. 6. By removing the resist pattern 220, a mask pattern constituted by the plating layer 230 is formed. The mask pattern constituted by the plating layer 230 corresponds to the non-opening portion 112 (i.e., the shielding portion that shields the deposition material) shown in FIGS. 1 and 2. The region formed by removing the resist pattern 220 corresponds to the opening portion 111 shown in FIGS. 1 and 2. Therefore, in the state shown in FIG. 6, a mask pattern that will ultimately function as the mask portion 110 is formed on the substrate 200. In FIG. 6, the region constituted by the opening portion 111 and the non-opening portion 112 and functioning as the mask pattern corresponds to the panel region 115.

[0036] 7, a resist pattern 240 is formed on the mask portion 110. The resist pattern 240 is formed by applying a photosensitive resin material onto the mask portion 110, followed by exposure and development (etching) processes. The region where the resist pattern 240 is formed is a region excluding the region where the metal layer 130a shown in FIG. 3B is provided and the region where the holding frame 120 is disposed. The resist pattern 240 may be formed using a dry film resist (DFR).

[0037] Next, as shown in Fig. 8, a holding frame 120 is placed on a portion of the non-opening portion 112 (a portion not to be used as the mask portion 110). The holding frame 120 is adhered onto the non-opening portion 112 using the adhesive force of an adhesive layer (e.g., unexposed dry film resist, etc.) not shown. The holding frame 120 is placed so as to surround the mask portion 110, as shown in Fig. 1. A resist pattern 242 that functions as a mask is provided in advance on the upper surface of the holding frame 120. The resist pattern 242 may be formed using dry film resist (DFR).

[0038] Next, as shown in FIG. 9, a metal layer 130a is formed in the region where the resist patterns 240 and 242 are not arranged. The metal layer 130a is formed using electroplating. Specifically, the metal layer 130a is selectively formed in the region where the resist patterns 240 and 242 are not arranged, using the holding frame 120, the non-opening portion 112, and the seed layer 210 as seed layers. Therefore, as shown in FIG. 9, the metal layer 130a is formed from the side surface of the holding frame 120 across the mask portion 110.

[0039] In this embodiment, the metal layer 130a is formed continuously from the side surface of the holding frame 120 to the top of the mask section 110. This allows the holding frame 120 and the mask section 110 to be connected via the metal layer 130a. The opening 111 provided in the portion of the mask section 110 that overlaps with the metal layer 130a serves to physically separate the mask section 110 from the holding frame 120 and to improve the adhesion between the mask section 110 and the metal layer 130a.

[0040] In this embodiment, the metal layer 130a is formed of a plating layer (metal layer) made of a nickel alloy (specifically, invar). In this embodiment, the thickness of the metal layer 130a is adjusted to a range of 50 μm to 200 μm. In this embodiment, an example in which the metal layer 130a is made of invar is shown, but the present invention is not limited to this example, and other metal materials that can be used for electroplating may also be used.

[0041] After the first metal layer 130a is formed, the resist patterns 240 and 242 are removed. Thereafter, as shown in FIG. 10, a new resist pattern 244 is formed. The resist pattern 244 is formed by applying a photosensitive resin material, followed by exposure and development (etching) processes. The region where the resist pattern 244 is formed is the region excluding the region where the metal layer 130b shown in FIG. 3B is provided. Specifically, it is on a part of the mask portion 110 and on the holding frame 120. The resist pattern 244 may be formed using a dry film resist (DFR).

[0042] 10, a space of distance X is left between the end of metal layer 130a and the end of resist pattern 244. This space is a region for forming second portion 132 shown in FIG. 3B. Distance X may be 10 μm or more (preferably 20 μm or more, and more preferably 30 μm or more).

[0043] Next, as shown in FIG. 11, a metal layer 130b is formed in an area where the resist pattern 244 is not arranged. The metal layer 130b is formed by electroplating. Specifically, the metal layer 130b is selectively formed using the metal layer 130a and a portion of the non-opening portion 112 (an area not covered by the resist 244) as a seed layer. Therefore, as shown in FIG. 11, the metal layer 130b is formed so as to cover the metal layer 130a. Furthermore, an end of the metal layer 130b directly contacts the non-opening portion 112. As a result, a portion corresponding to the second portion 132 described with reference to FIG. 3B is formed.

[0044] In this embodiment, the metal layer 130b is formed of a plating layer (metal layer) made of a nickel alloy (specifically, invar). In this embodiment, the thickness of the metal layer 130a is adjusted to a range of 2.5 μm to 5 μm. In this embodiment, the metal layer 130b is formed of invar, but this is not limiting, and other metal materials that can be used for electroplating may be used.

[0045] 12, after the metal layer 130b is formed, the resist pattern 244 is removed and then the substrate 200 is removed. Specifically, the holding frame 120 is fixed by suction or the like, and then the substrate 200 is removed by mechanically peeling the substrate 200 from the mask portion 110, the holding frame 120, and the connecting portion 130. At this time, the seed layer 210 and a part of the mask portion 110 (non-opening portion 112 overlapping the holding frame 120) are removed together with the substrate 200.

[0046] In this embodiment, as shown in the region surrounded by the frame line 20, the metal layer 130b is provided so as to cover the end portion of the metal layer 130a. Therefore, it is possible to reduce the normal stress generated in the region surrounded by the frame line 20 when the substrate 200 is peeled off.

[0047] Through the above manufacturing process, a deposition mask 100 having the cross-sectional structure shown in Fig. 13 is completed. As shown in Fig. 13, the deposition mask 100 of this embodiment has a structure in which a thin-film mask section 110 is connected to a holding frame 120 via a connection section 130. At this time, the connection section 130 includes a first section 131 having a laminated structure of a metal layer 130a and a metal layer 130b, and a second section 132 consisting only of the metal layer 130b. That is, in this embodiment, a portion having a thinner film thickness than other portions is provided at the end of the connection section 130 on the mask section 110 side.

[0048] In this embodiment, the above-described structure can alleviate the vertical stress that occurs in the mask portion 110 near the end of the connection portion 130 when the substrate 200 is peeled off, thereby suppressing the occurrence of distortion in the mask portion 110 due to peeling off the substrate 200. In this way, this embodiment can provide a deposition mask that suppresses distortion in the mask pattern.

[0049] <Variation 1> In the first embodiment, an example was shown in which the connection part 130 was formed using metal layers 130a and 130b with different film thicknesses, but this is not the only example, and the connection part 130 can also be formed using a single metal layer. In this modified example, an example in which the connection part 130 is formed using a single plating layer will be described. In the drawings used for the explanation, the same elements as in the first embodiment will be designated by the same reference numerals and detailed explanations will be omitted.

[0050] 14 and 15 are cross-sectional views showing the configuration of a deposition mask 100 according to Modification 1 of the first embodiment of the present invention.

[0051] The state shown in FIG. 9 is obtained by the same procedure as in the first embodiment. That is, the connection portion 130 is formed between the mask portion 110 and the holding frame 120 by electroplating. After the connection portion 130 is formed, the resist pattern 240 is removed, and then a resist pattern 246 is formed as shown in FIG. 14. The resist pattern 246 is formed by applying a photosensitive resin material, followed by exposure and development (etching) processes. The region where the resist pattern 246 is formed is the region excluding the region corresponding to the second portion 132 shown in FIG. 3B.

[0052] After forming the resist pattern 246, an etching process is performed on the end of the connecting portion 130 using the resist pattern 246 as a mask, and the end of the connecting portion 130 (the end closer to the mask portion 110) is locally thinned. This process is a so-called half-etching process. After the half-etching process is completed, the resist pattern 246 is removed, resulting in the state shown in FIG. 15.

[0053] 15, the connecting portion 130c of the present modified example 1 is made of a single metal layer (plated layer), and includes a first portion 131 that has a first thickness and contacts the mask portion 110, and a second portion 132 that has a second thickness that is thinner than the first thickness and contacts the mask portion 110. As such, the connecting portion 130c of the present modified example 1 has a structure in which the thickness gradually decreases toward the inside of the mask portion 110, similar to the first embodiment. Therefore, it is possible to alleviate the vertical stress that occurs in the mask portion 110 near the end of the connecting portion 130c, and to reduce the distortion that occurs in the mask portion 110.

[0054] <Variation 2> In the first embodiment, an example was shown in which, after forming the metal layer 130a, the resist pattern 240 was removed and a new resist pattern 244 was formed. However, this example is not limiting, and it is also possible to reuse the resist pattern 240 used to form the metal layer 130a in the process shown in FIG. 10. In this modified example, an example in which the metal layer 130b is formed using the resist pattern 240 will be described. In the drawings used for the explanation, the same elements as in the first embodiment are designated by the same reference numerals and detailed explanations thereof will be omitted.

[0055] 16 and 17 are cross-sectional views showing the configuration of a deposition mask 100 according to Modification 2 of the first embodiment of the present invention.

[0056] After obtaining the state shown in FIG. 9 using the same procedure as in the first embodiment, an etching process is performed on the resist pattern 240, and the end of the resist pattern 240 is set back by a distance X. The setback amount by the etch-back process is the length (X) corresponding to the second portion 132 shown in FIG. 3B. This process is called an etch-back process. For example, a dry etching process in an oxygen atmosphere is used as the etch-back process. At this time, the end of the resist pattern 242 provided on the holding frame 120 also sets back, but this does not significantly affect the performance as a deposition mask.

[0057] Next, metal layer 130b is formed by electroplating using the receding resist patterns 240 and 242. After metal layer 130b is formed, resist patterns 240 and 242 are removed to obtain the state shown in Fig. 17. According to this second modification, there is no need to form a new resist pattern 244 when forming metal layer 130b, and the manufacturing process can be simplified.

[0058] (Variation 3) In the first embodiment, an example was shown in which the connection portion 130 was formed using two metal layers 130a and 130b. However, the connection portion 130 may be formed using three or more metal layers. For example, the metal layer 130a may be formed from two or more metal layers and the metal layer 130b may be formed from a single metal layer, or each of the metal layer 130a and the metal layer 130b may be formed from a plurality of metal layers.

[0059] Furthermore, when three or more metal layers are used, the film thickness of the connection portion 130 may be changed in three or more stages. For example, after obtaining the state shown in FIG. 11, the resist pattern 244 is removed and a new resist pattern is formed. At this time, the new resist pattern is arranged so that the metal layer 130b and a part of the non-opening portion 112 are exposed. Thereafter, a third electroplating may be performed using the new resist pattern as a mask to form a third metal layer that covers the metal layer 130b.

[0060] By using three or more metal layers (plated layers) as in this modification, the film thickness of the connection part 130 can be changed in three or more stages, and the change in film thickness at the end part (the end part on the mask part 110 side) of the connection part 130 can be made more gradual. This further improves the ability to alleviate the normal stress that occurs when the substrate 200 is peeled off.

[0061] Second Embodiment In this embodiment, a deposition mask 100A having a different configuration from that of the first embodiment will be described. FIG. 18 is a plan view showing the configuration of the deposition mask 100A according to a second embodiment of the present invention. FIG. 19 is a cross-sectional view showing the configuration of the deposition mask 100A according to the second embodiment of the present invention. The deposition mask 100A of this embodiment has the same structure as the deposition mask 100 of the first embodiment except for the arrangement of the holding frame 120 and the connection portion 130. Therefore, the same elements as those in the first embodiment will be denoted by the same reference numerals and detailed description thereof will be omitted.

[0062] As shown in FIGS. 18 and 19 , in the deposition mask 100A, a holding frame 120 is provided in a lattice pattern on a mask portion 110. That is, the mask portion 110 is supported by the holding frame 120 provided in a lattice pattern. As in the first embodiment, the mask portion 110 is connected to the holding frame 120 via a connecting portion 130. As shown in FIG. 19 , the connecting portion 130 is configured using a metal layer 130a and a metal layer 130b, and the end portion closer to the panel region 115 has a thinner film thickness than the other portions. The specific configuration of the connecting portion 130 is the same as in the first embodiment.

[0063] As described above, in this embodiment, a lattice-shaped metal member is used as the holding frame 120, rather than a rectangular metal member. Therefore, the deposition mask 100A of this embodiment can support the mask part 110 more stably than in the first embodiment.

[0064] The above-described embodiments of the present invention can be combined as appropriate as long as they are not mutually inconsistent. A product in which a person skilled in the art appropriately adds or deletes components or modifies designs, or adds or omits steps or modifies conditions, based on each embodiment, is also included within the scope of the present invention as long as it includes the gist of the present invention.

[0065] Furthermore, even if there are other effects and advantages different from those brought about by the aspects of each of the above-mentioned embodiments, if they are clear from the description in this specification or can be easily predicted by a person skilled in the art, they are naturally understood to be brought about by the present invention. [Explanation of symbols]

[0066] 100, 100A... deposition mask, 110... mask portion, 111... opening portion, 112... non-opening portion, 115... panel region, 120... holding frame, 130... connection portion, 130a, 130b, 130c... metal layer, 131... first portion, 132... second portion, 200... substrate, 210... seed layer, 220, 240, 242, 246... resist pattern

Claims

1. a mask portion having a plurality of openings; a holding frame for holding the mask portion; a connection portion that connects the mask portion and the holding frame; and the connecting portion has a first portion that contacts the mask portion with a first thickness, and a second portion that contacts the mask portion with a second thickness that is thinner than the first thickness; Including, the connection portion includes a first metal layer and a second metal layer stacked on the first metal layer; the first portion is formed by a stacked structure of the first metal layer and the second metal layer, the second portion is formed of the first metal layer.

2. The deposition mask according to claim 1 , wherein the second portion is located more inward than the first portion of the mask portion.

3. The deposition mask according to claim 1 , wherein the second portion has a width of 10 μm or more in a plan view.

4. The deposition mask according to claim 1 , wherein the connection portion is in contact with a side surface of the holding frame at the first film thickness.

5. The deposition mask according to claim 1 , wherein the first metal layer and the second metal layer are plated layers.

6. The deposition mask according to claim 1 , wherein the first metal layer and the second metal layer are the same metal layer.

7. The deposition mask according to claim 1 , wherein the mask portion is formed of a plating layer.

8. The deposition mask according to claim 1 , wherein the mask portion is connected to the holding frame via the connecting portion.

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