Sensors and Inspection Equipment

Abstract

To provide a sensor and an inspection device capable of improving characteristics.SOLUTION: A sensor includes an element portion including a first element. The first element includes a first magnetic element, a first conductive member, and a first magnetic portion. The first magnetic element includes a first magnetic layer and a first opposing magnetic layer. A length of the first magnetic element along a second direction crossing a first direction from the first magnetic layer to the first opposing magnetic layer is longer than a length of the first magnetic element along a third direction crossing a plane including the first direction and the second direction. The first conductive member includes a first conductive portion and a first other conductive portion. A direction from the first other conductive portion to the first conductive portion is along the second direction. A direction from the first magnetic portion to the first magnetic element is along the second direction.SELECTED DRAWING: Figure 1

Description

[Technical Field]

[0001] FIELD OF THE INVENTION The present invention relates to a sensor and an inspection device. [Background technology]

[0002] For example, there is a sensor using a magnetic layer, and it is desirable to improve the characteristics of the sensor. [Prior art documents] [Patent documents]

[0003] [Patent Document 1] Japanese Patent Application Publication No. 2018-155719 Summary of the Invention [Problem to be solved by the invention]

[0004] Embodiments of the present invention provide sensors and inspection devices that allow for improved performance. [Means for solving the problem]

[0005] According to an embodiment of the present invention, a sensor includes an element unit including a first element. The first element includes a first magnetic element, a first conductive member, and a first magnetic portion. The first magnetic element includes a first magnetic layer and a first opposing magnetic layer. The length of the first magnetic element along a second direction intersecting with a first direction from the first magnetic layer to the first opposing magnetic layer is longer than the length of the first magnetic element along a third direction intersecting with a plane including the first direction and the second direction. The first conductive member includes a first conductive portion and a first other conductive portion. The direction from the first other conductive portion to the first conductive portion is along the second direction. The direction from the first magnetic portion to the first magnetic element is along the second direction. [Brief explanation of the drawings]

[0006] [Figure 1] FIG. 1 is a schematic view illustrating the sensor according to the first embodiment. [Figure 2]2(a) to 2(c) are schematic views illustrating the sensor according to the first embodiment. [Figure 3] 3(a) and 3(b) are graphs illustrating the characteristics of the sensor. [Figure 4] 4(a) and 4(b) are schematic views illustrating the operation of the sensor according to the first embodiment. [Figure 5] FIG. 5 is a graph illustrating the characteristics of the sensor. [Figure 6] FIG. 6 is a graph illustrating the characteristics of the sensor. [Figure 7] FIG. 7 is a schematic view illustrating the sensor according to the first embodiment. [Figure 8] 8(a) to 8(c) are schematic views illustrating the sensor according to the first embodiment. [Figure 9] 9(a) to 9(c) are schematic views illustrating the sensor according to the first embodiment. [Figure 10] 10(a) to 10(c) are schematic views illustrating the sensor according to the first embodiment. [Figure 11] FIG. 11 is a schematic view illustrating the sensor according to the first embodiment. [Figure 12] 12(a) to 12(c) are schematic views illustrating the sensor according to the first embodiment. [Figure 13] FIG. 13 is a schematic view illustrating the sensor according to the first embodiment. [Figure 14] FIG. 14 is a schematic view illustrating the sensor according to the first embodiment. [Figure 15] 15(a) to 15(c) are schematic views illustrating the sensor according to the first embodiment. [Figure 16] FIG. 16 is a schematic view illustrating the sensor according to the first embodiment. [Figure 17] FIG. 17 is a schematic view illustrating the sensor according to the first embodiment. [Figure 18] FIG. 18 is a schematic view illustrating the sensor according to the first embodiment. [Figure 19]19(a) to 19(c) are schematic views illustrating the sensor according to the first embodiment. [Figure 20] 20(a) to 20(c) are schematic views illustrating the sensor according to the first embodiment. [Figure 21] FIG. 21 is a schematic view illustrating the sensor according to the first embodiment. [Figure 22] FIG. 22 is a schematic view illustrating the sensor according to the first embodiment. [Figure 23] FIG. 23 is a schematic view illustrating the sensor according to the first embodiment. [Figure 24] FIG. 24 is a schematic view illustrating the sensor according to the first embodiment. [Figure 25] FIG. 25 is a schematic view illustrating the sensor according to the first embodiment. [Figure 26] FIG. 26 is a schematic view illustrating the sensor according to the first embodiment. [Figure 27] FIG. 27 is a schematic view illustrating the sensor according to the first embodiment. [Figure 28] FIG. 28 is a schematic perspective view showing an inspection device according to the second embodiment. [Figure 29] FIG. 29 is a schematic plan view showing an inspection device according to the second embodiment. [Figure 30] FIG. 30 is a schematic diagram showing a sensor and an inspection device according to an embodiment. [Figure 31] FIG. 31 is a schematic diagram showing an inspection device according to an embodiment. DETAILED DESCRIPTION OF THE INVENTION

[0007] Hereinafter, an embodiment of the present invention will be described with reference to the drawings. The drawings are schematic or conceptual, and the relationship between the thickness and width of each part, the size ratio between parts, etc. are not necessarily the same as those in reality. Even when the same part is shown, the dimensions and ratios may be different depending on the drawing. In this specification and in each drawing, elements similar to those previously described with reference to the previous drawings are designated by the same reference numerals, and detailed descriptions thereof will be omitted where appropriate.

[0008] (First embodiment) FIG. 1 and FIG. 2(a) to FIG. 2(c) are schematic views illustrating the sensor according to the first embodiment. Fig. 2(a) is a plan view, Fig. 2(b) is a cross-sectional view taken along line A1-A2 in Fig. 2(a), and Fig. 2(c) is a cross-sectional view taken along line B1-B2 in Fig. 2(a).

[0009] 1, a sensor 110 according to the embodiment includes an element unit 10U. The element unit 10U includes a first element 10A.

[0010] The first element 10A includes a first magnetic element 11, a first conductive member 21, and a first magnetic part 41. As shown in FIGS. 2(b) and 2(c), the first magnetic element 11 includes a first magnetic layer 11a and a first opposing magnetic layer 11b.

[0011] The first direction D1 from the first magnetic layer 11a to the first opposing magnetic layer 11b is defined as the Z-axis direction. A direction perpendicular to the Z-axis direction is defined as the Y-axis direction. The direction perpendicular to the Z-axis and Y-axis directions is defined as the X-axis direction.

[0012] As shown in FIG. 2(a), the length of the first magnetic element 11 along the second direction D2 intersecting with the first direction D1 is defined as length Le1. The second direction D2 is, for example, the Y-axis direction. The length of the first magnetic element 11 along the third direction D3 is defined as Le2. The third direction D3 intersects with a plane including the first direction D1 and the second direction D2. The third direction D3 is, for example, the X-axis direction. The length Le1 is longer than the length Le2. In the first magnetic element 11, the length Le1 is the length in the easy axis direction of the magnetization free layer included in the first magnetic element 11. In the first magnetic element 11, the length Le2 is the length in the hard axis direction of the magnetization free layer included in the first magnetic element 11.

[0013] 1, the first conductive member 21 includes a first conductive portion 21e and a first other conductive portion 21f. The direction from the first other conductive portion 21f to the first conductive portion 21e is along the second direction D2.

[0014] 2(a), the first magnetic element 11 includes a first element portion 11e and a first other element portion 11f. The direction from the first other element portion 11f to the first element portion 11e is along the second direction D2. The length Le1 corresponds to, for example, the distance between the first element portion 11e and the first other element portion 11f.

[0015] The first element portion 11e corresponds to the first conductive portion 21e. The first other element portion 11f corresponds to the first other conductive portion 21f. The distance between the first element portion 11e and the first conductive portion 21e is shorter than the distance between the first element portion 11e and the first other conductive portion 21f. The distance between the first other element portion 11f and the first other conductive portion 21f is shorter than the distance between the first other element portion 11f and the first conductive portion 21e.

[0016] figure 1, the direction from the first magnetic part 41 to the first magnetic element 11 is along the second direction D2.

[0017] The first magnetic part 41 can apply a bias magnetic field to the first magnetic element 11. The magnetization of the magnetic layer included in the first magnetic element 11 can be controlled by the bias magnetic field.

[0018] 1, for example, a magnetic field to be detected Ht is applied to the first magnetic element 11. The magnetic field to be detected Ht includes a component along the second direction D2. The electrical resistance of the first magnetic element 11 changes in response to the magnetic field to be detected Ht. The magnetic field to be detected Ht can be detected by detecting the change in the electrical resistance.

[0019] 3(a) and 3(b) are graphs illustrating the characteristics of the sensor. 3(a) illustrates the characteristics of the first magnetic element 11. The horizontal axis of FIG. 3(a) is the magnetic field Hy applied to the first magnetic element 11. The magnetic field Hy is along the second direction D2. The vertical axis is the first electrical resistance R1 of the first magnetic element 11. The first electrical resistance R1 corresponds to the voltage Ve (see FIG. 1) across the first magnetic element 11.

[0020] As shown in FIG. 3(a), for example, the rate of change of the first electrical resistance R1 with respect to the magnetic field Hy applied to the first magnetic element 11 may not be constant relative to the magnitude of the magnetic field Hy. In this example, when the absolute value of the magnetic field Hy is small, the rate of change of the first electrical resistance R1 is low. On the other hand, when the absolute value of the magnetic field Hy is large, the rate of change of the first electrical resistance R1 is high. For example, when the magnetic field Ht to be detected is in the range DR1, the change in the first electrical resistance R1 is small.

[0021] 3(b) illustrates the characteristics when a bias magnetic field Hb from the first magnetic part 41 is applied to the first magnetic element 11. The horizontal axis of FIG. 3(a) represents the sum of the magnetic field Hy and the bias magnetic field Hb. The vertical axis represents the first electrical resistance R1 of the first magnetic element 11.

[0022] 3(b), when the bias magnetic field Hb is applied to the first magnetic element 11, the first electrical resistance R1 shifts from the characteristics shown in FIG. 3(a). For example, when the sum of the target magnetic field Ht and the bias magnetic field Hb is in the range DR2, a large change in the first electrical resistance R1 is obtained.

[0023] As described above, in the embodiment, the first magnetic part 41 is provided. The bias magnetic field Hb by the first magnetic part 41 is applied to the first magnetic element 11. This has the effect of shifting the magnetic field Ht to be detected. The bias magnetic field Hb makes it possible to detect the magnetic field Ht to be detected in a region where the rate of change of the first electrical resistance R1 of the first magnetic element 11 is high. For example, high detection sensitivity can be obtained. According to the embodiment, a sensor capable of improving characteristics can be provided.

[0024] 2(a), the length of the first magnetic part 41 along the third direction D3 is defined as length W41. The length W41 is longer than length Le2 (the length of the first magnetic element 11 along the third direction D3). This allows the magnetic field from the first magnetic part 41 to be applied to the first magnetic element 11 uniformly and effectively.

[0025] The first magnetic part 41 includes, for example, a ferromagnetic material. The first magnetic part 41 includes, for example, at least one selected from the group consisting of Fe and Co.

[0026] 1, the first element 10A may further include a first opposing magnetic portion 41A. At least a portion of the first magnetic element 11 is located between the first magnetic portion 41 and the first opposing magnetic portion 41A in the second direction D2. The first magnetic portion 41 and the first opposing magnetic portion 41A allow the bias magnetic field Hb to be applied to the first magnetic element 11 more stably and effectively. The material of the first opposing magnetic portion 41A may be the same as the material of the first magnetic portion 41.

[0027] The direction of the magnetization 41M of the first magnetic part 41 includes a component in the second direction D2. A The direction of M includes a component in the second direction D2. The direction of magnetization 41M of the first magnetic part 41 is the same as the direction of magnetization 41AM of the first opposing magnetic part 41A.

[0028] 2(a), the length of the first opposing magnetic part 41A along the third direction D3 is defined as length W41A. The length W41A is longer than the length Le2 (the length of the first magnetic element 11 along the third direction D3). The bias magnetic field Hb can be applied uniformly and effectively to the first magnetic element 11.

[0029] 1, a control unit 70 is provided. The control unit 70 may be included in the sensor 110. The control unit 70 may be provided separately from the sensor 110. The control unit 70 includes a first circuit 71.

[0030] The first circuit 71 is electrically connected to the first conductive portion 21e and the first other conductive portion 21f. The first circuit 71 is capable of supplying a first current i1 to the first conductive member 21. The first current i1 includes an AC component.

[0031] As will be described later, the first current i1 may include a DC bias. For example, the maximum and minimum values ​​of the first current i1 may have the same polarity. For example, the first current i1 does not become 0 during an AC change. This makes the magnetization of the magnetic layer included in the first magnetic element 11 more stable.

[0032] When the first current i1 flows through the first conductive member 21, a first magnetic field Ha is generated from the first conductive member 21. The first magnetic field Ha is along a cross direction Dx that crosses a plane including the first direction D1 and the second direction D2. The cross direction Dx corresponds to the third direction D3. The first conductive member 21 is an example of a magnetic field generating unit 28. The magnetic field generating unit 28 generates the first magnetic field Ha along the cross direction Dx.

[0033] The first magnetic field Ha is applied to the first magnetic element 11. The first electrical resistance R1 of the first magnetic element 11 changes in response to a change in the first current i1. The first electrical resistance R1 of the first magnetic element 11 changes in response to both the magnetic field Ht to be detected and the first magnetic field Ha. By processing a signal corresponding to the first electrical resistance R1 based on the frequency of the AC component of the first current i1, the magnetic field Ht to be detected can be detected with higher accuracy.

[0034] As shown in FIG. 1, the control unit 70 may include a second circuit 72 and a third circuit 73. The second circuit 72 is capable of supplying a detection current id to the first magnetic element 11. The third circuit 73 is capable of detecting a value corresponding to a change in the first electrical resistance R1 of the first magnetic element 11. The value corresponding to the change in the first electrical resistance R1 is, for example, a voltage Ve. The voltage Ve changes according to the magnetic field Ht to be detected. A signal corresponding to the magnetic field Ht to be detected is obtained from an output section 73o of the third circuit 73. The detection current id may be, for example, a direct current.

[0035] 2(b) and 2(c), the first magnetic element 11 may include a first non-magnetic layer 11n. The first non-magnetic layer 11n is provided between the first magnetic layer 11a and the first opposing magnetic layer 11b.

[0036] As shown in FIG. 2(b), in this example, when the first current i1 is not flowing, the magnetization 11aM of the first magnetic layer 11a is aligned with the second direction D2. The magnetization 11bM of the first opposing magnetic layer 11b is aligned with the second direction D2. In the embodiment, the magnetization 11aM may intersect with the magnetization 11bM. In the embodiment, the first magnetic layer 11a may be, for example, one of the reference layer and the magnetization free layer. The first opposing magnetic layer 11b may be, for example, the other of the reference layer and the magnetization free layer. The reference layer is, for example, a pinned layer.

[0037] The change in the first electrical resistance R1 of the first magnetic element 11 is based on the change in the angle between the magnetization 11aM and the magnetization 11bM in response to a magnetic field applied to the first magnetic element 11, for example.

[0038] 2(b) and 2(c), for example, the direction from the first conductive member 21 to the first magnetic element 11 is along the first direction D1. In this example, the first magnetic layer 11a is located between the first conductive member 21 and the first opposing magnetic layer 11b. In an embodiment, the first opposing magnetic layer 11b may be located between the first conductive member 21 and the first magnetic layer 11a.

[0039] In the embodiment, the first non-magnetic layer 11n may be conductive. The first non-magnetic layer 11n includes, for example, Cu. The first magnetic element functions as a GMR (Giant MagnetoResistive effect) element. The first non-magnetic layer 11n may be insulating. The first non-magnetic layer 11n includes, for example, MgO. The first magnetic element functions as a TMR (Tunnel Magneto Resistance effect) element.

[0040] 2(b) and 2(c), the first element 10A may include a first insulating member 81. At least a portion of the first insulating member 81 is provided between the first magnetic element 11 and the first conductive member 21. The first insulating member 81 electrically insulates the first magnetic element 11 from the first conductive member 21.

[0041] In the embodiment, the first magnetic field Ha changes the magnetization direction of the magnetization free layer (e.g., the first magnetic layer 11a) included in the first magnetic element 11. The first magnetic field Ha is along the intersecting direction Dx (e.g., the third direction D3). The magnetic field to be detected Ht includes a component in a direction intersecting the intersecting direction Dx (e.g., the second direction D2). The component of the magnetic field to be detected Ht in the second direction D2 affects the magnetization direction caused by the first magnetic field Ha. The magnetic field to be detected Ht can be detected by detecting a change in the first electrical resistance R1 based on the magnetization direction.

[0042] For example, the first electrical resistance R1 changes significantly when a second-direction magnetic field having a component in the second direction D2 is applied to the first magnetic element 11. On the other hand, the first electrical resistance R1 changes significantly when a third-direction magnetic field having a component in the intersecting direction Dx (third direction D3) is applied to the first magnetic element 11. The rate of change of the first electrical resistance R1 with respect to the change in the second-direction magnetic field is higher than the rate of change of the first electrical resistance R1 with respect to the change in the third-direction magnetic field.

[0043] 4(a) and 4(b) are schematic views illustrating the operation of the sensor according to the first embodiment. FIG. 4(a) illustrates a first current i1. The horizontal axis of FIG. 4(a) represents time tm. The vertical axis of FIG. 4(a) represents the value of the first current i1. As shown in FIG. 4(a), the first current i1 includes an AC component ia1. The minimum value of the first current i1 has a first polarity, and the maximum value of the first current i1 has the first polarity.

[0044] For example, the first polarity is either positive or negative. An example in which the first polarity is positive will be described below.

[0045] For example, the first current i1 includes an AC component ia1 and a DC component id1. The DC component id1 is greater than half the amplitude ip1 of the AC component ia1. In the first current i1, the difference between the minimum value and the maximum value corresponds to the amplitude ip1. In the embodiment, both the minimum value and the maximum value have a first polarity (e.g., positive). The first current i1 never becomes a second polarity (e.g., negative). The first current i1 never becomes zero.

[0046] A first magnetic field Ha is generated by the first current i1. FIG. 4(b) illustrates the first magnetic field Ha. The horizontal axis of FIG. 4(b) represents time tm. The vertical axis of FIG. 4(b) represents the intensity of the first magnetic field Ha. As shown in FIG. 4(b), the first magnetic field Ha includes an AC magnetic field component Ha1. The minimum value of the first magnetic field Ha has the first polarity, and the maximum value of the first magnetic field Ha has the first polarity.

[0047] For example, the first magnetic field Ha includes an AC magnetic field component Ha1 and a DC magnetic field component Hd1. The DC magnetic field component Hd1 is greater than half the amplitude Hp1 of the AC magnetic field component Ha1. In the first magnetic field Ha, the difference between the minimum value and the maximum value corresponds to the amplitude Hp1. In the embodiment, both the minimum value and the maximum value have a first polarity (e.g., positive). The first magnetic field Ha never has a second polarity (e.g., negative). The first magnetic field Ha never becomes 0. The minimum value Hmin of the first magnetic field Ha is the difference between the DC magnetic field component Hd1 and half the amplitude Hp1 of the AC magnetic field component Ha1. In the embodiment, for example, the minimum value Hmin of the first magnetic field Ha is positive.

[0048] The first electrical resistance R1 of the first magnetic element 11 changes in response to a change in the first magnetic field Ha. The change in the first electrical resistance R1 is caused by, for example, the magnetoresistance effect. For example, the first electrical resistance R1 of the first magnetic element 11 changes in response to a change in the first current i1.

[0049] Meanwhile, a magnetic field to be detected Ht is applied to the first magnetic element 11. The magnetic field to be detected Ht also changes the first electrical resistance R1 of the first magnetic element 11. The first electrical resistance R1 changes in response to both the first current i1 (and the first magnetic field Ha) and the magnetic field to be detected Ht. In the embodiment, for example, the magnetic field to be detected Ht can be detected by detecting the change in the first electrical resistance R1 and processing the result based on the frequency of the AC component ia1 of the first current i1 (the frequency of the AC magnetic field component Ha1 of the first magnetic field Ha).

[0050] When both the minimum and maximum values ​​have a first polarity (e.g., positive), for example, the first current i1 and the first magnetic field Ha always have the first polarity (positive) and never become 0 or negative, thereby enabling detection with suppressed noise.

[0051] For example, when the first current i1 (and the first magnetic field) changes from positive to 0 or negative, magnetic domain disturbance occurs in at least one of the first magnetic layer 11a and the first opposing magnetic layer 11b. Magnetic domain disturbance includes, for example, the creation of magnetic domains, the disappearance of magnetic domains, or the movement of magnetic domains. Magnetic domain disturbance generates noise in the signal obtained from the first magnetic element 11. In the embodiment, if the first current i1 and the first magnetic field Ha are always of one polarity (e.g., positive), noise caused by magnetic domain disturbance can be suppressed. This enables more stable and highly sensitive detection. According to the embodiment, a sensor and an inspection device capable of improving characteristics can be provided.

[0052] As shown in FIG. 2(a), the length of the first conductive member 21 in the second direction D2 is defined as length Lc1. The length of the first conductive member 21 in the third direction D3 is defined as length Lc2. In the embodiment, it is preferable that length Lc1 is longer than length Lc2. This makes the direction of the generated magnetic field (first magnetic field Ha) more stable. The ratio of length Lc1 to length Lc2 (Lc1 / Lc2) is, for example, 2 or more top 100 0 or more Below.

[0053] In the first magnetic element 11, the ratio of the length Le1 to the length Le2 (Le1 / Le2) is, for example, 2 or more top 100 0 or more Below.

[0054] 5 and 6 are graphs illustrating the characteristics of the sensor. 6 illustrates a simulation result of the characteristics of the sensor 110 when the first magnetic part 41 and the first opposing magnetic part 41A are not provided. In the simulation, the first magnetic layer 11a is used as a magnetization free layer, and the first opposing magnetic layer 11b is used as a reference layer. A magnetic field to be detected Ht along the second direction D2 and a magnetic field (first magnetic field Ha) along the third direction D3 are applied to the first magnetic element 11. In the simulation, these magnetic fields do not include a DC component. When these magnetic fields are applied, the directions of the magnetization 11aM of the first magnetic layer 11a and the magnetization 11bM of the first opposing magnetic layer 11b are calculated. The magnetic resistance is calculated based on the angles of these magnetization directions.

[0055] The horizontal axis of Figure 5 is the magnetic field strength Has of the magnetic field along the third direction D3. The magnetic field strength Has is normalized by the anisotropy magnetic field Hk of the magnetization free layer. The vertical axis of Figure 5 is the magnetoresistance MR1. The magnetoresistance MR1 is normalized by the maximum value of the magnetoresistance. Figure 5 shows values ​​for various normalized magnetic fields to be detected Hts. The normalized magnetic field to be detected Hts is normalized by the anisotropy magnetic field Hk of the magnetization free layer.

[0056] 5, the magnetic resistance MR1 when the normalized magnetic field to be detected Hts is 0.0001 corresponds to the magnetic resistance when the magnetic field to be detected Ht is not substantially applied to the first magnetic element 11. In this case, as the magnetic field strength Has of the magnetic field along the third direction D3 increases, the magnetic resistance MR1 increases. When the magnetic field strength Has of the magnetic field along the third direction D3 is 1 or more, the magnetic resistance MR1 saturates.

[0057] As shown in Figure 5, as the normalized magnetic field to be detected Hts increases, the change in magnetic resistance MR1 becomes more gradual. For example, when the magnetic field strength Has of the magnetic field along the third direction D3 is 1.5, the magnetic resistance MR1 changes significantly depending on the normalized magnetic field to be detected Hts. By utilizing this characteristic, the magnetic resistance can be detected, thereby enabling the magnetic field to be detected Ht with high sensitivity.

[0058] In FIG. 6, values ​​of several parameters are plotted on a graph similar to that in FIG. 5. When the magnetic field Ht to be detected along the second direction D2 is zero (Hts=0.0001 in FIG. 6), the saturation value of the magnetic resistance MR1 is set to 1. When the magnetic field Ht to be detected is zero, the magnetic field strength at which the magnetic resistance MR1 is 0.9 is set to the first magnetic field value Hs1. The first magnetic field value Hs1 has a first polarity (positive in this example). The first magnetic field value Hs1 corresponds to, for example, an approximate saturation magnetic field. In the embodiment, it is preferable that the absolute value of the minimum value Hmin of the first magnetic field Ha (see FIG. 4(b)) is greater than the absolute value of the first magnetic field value Hs1.

[0059] That is, in an embodiment, for example, Hd1-Hp / 2 > Hs1 It is preferable that the following condition be satisfied: Under such a condition, the magnetic field to be detected Ht can be detected efficiently with higher sensitivity.

[0060] When a magnetic field to be detected Ht along the second direction D2 is not applied to the first magnetic element 11, and a magnetic field along the transverse direction Dx (i.e., the third direction D3) having a first magnetic field value Hs1 of a first polarity is applied to the first magnetic element 11, the first electrical resistance R1 of the first magnetic element 11 is 0.9 times the saturated electrical resistance (the saturated value of the magnetic resistance MR1). The saturated electrical resistance is the saturated value of the first electrical resistance R1 of the first magnetic element 11 when the magnetic field along the transverse direction Dx (i.e., the third direction D3) increases.

[0061] In the embodiment, the minimum value of the first current i1 corresponds to the difference between the DC component id1 of the first current i1 and half the amplitude ip1 of the AC component ia1. This difference (the absolute value of the minimum value of the first current i1) is preferably greater than the absolute value of the first current value of the first polarity corresponding to the first magnetic field value Hs1. For example, when a current having a first current value and a first polarity flows through the first conductive member 21 in a state in which the magnetic field Ht to be detected along the second direction D2 is not applied to the first magnetic element 11, the first electrical resistance R1 of the first magnetic element 11 is 0.9 times the saturated electrical resistance. The saturated electrical resistance is the saturated value of the first electrical resistance R1 of the first magnetic element 11 when the current flowing through the first conductive member 21 increases. Such a first current i1 enables the magnetic field Ht to be detected efficiently with higher sensitivity.

[0062] FIG. 7 and FIG. 8(a) to FIG. 8(c) are schematic views illustrating the sensor according to the first embodiment. Fig. 8(a) is a plan view, Fig. 8(b) is a cross-sectional view taken along line A1-A2 in Fig. 8(a), and Fig. 8(c) is a cross-sectional view taken along line B1-B2 in Fig. 8(a).

[0063] 7, the sensor 111 according to the embodiment also includes an element unit 10U. The element unit 10U includes a first element 10A. In the sensor 111, the first element 10A includes a first magnetic element 11, a first conductive member 21, and a first conductive layer 61. In the sensor 111, the first magnetic unit 41 and the first opposing magnetic unit 41A may be omitted. Except for these, the configuration of the sensor 111 may be similar to that of the sensor 110.

[0064] 8(b) and 8(c), in the sensor 111, the first magnetic element 11 also includes a first magnetic layer 11a and a first opposing magnetic layer 11b. As shown in FIG. 8(b), the length Le1 of the first magnetic element 11 along the second direction D2 is longer than the length Le2 of the first magnetic element 11 along the third direction D3. As already described, the second direction D2 intersects with the first direction D1 from the first magnetic layer 11a to the first opposing magnetic layer 11b. The third direction D3 intersects with a plane including the first direction D1 and the second direction D2.

[0065] The first conductive member 21 includes a first conductive portion 21e and a first other conductive portion 21f. The direction from the first other conductive portion 21f to the first conductive portion 21e is along the second direction D2.

[0066] The first conductive layer 61 overlaps with the first magnetic element 11 in the first direction D1. The first magnetic element 11, the first conductive layer 61, and the first conductive member 21 may be stacked in any order.

[0067] 7 and 8(a), the first conductive layer 61 includes a first conductive layer portion 61e and a first other conductive layer portion 61f. The direction from the first conductive layer portion 61e to the first other conductive layer portion 61f is along the third direction D3. As shown in FIG. 7, a second current i2 can flow between the first conductive layer portion 61e and the first other conductive layer portion 61f.

[0068] For example, as shown in FIG. 7 , a fourth circuit 74 may be provided. The fourth circuit 74 may be included in the sensor 111. The fourth circuit 74 may be provided separately from the sensor 111. The fourth circuit 74 is capable of supplying a second current i2 to the first conductive layer 61. A first terminal 61a may be provided electrically connected to the first conductive layer portion 61e. A first other terminal 61b may be provided electrically connected to the first other conductive layer portion 61f. The fourth circuit 74 is electrically connected to the first terminal 61a and the first other terminal 61b. The fourth circuit 74 is, for example, a current source. The second current i2 may be, for example, a direct current.

[0069] When the second current i2 flows through the first conductive layer 61, a magnetic field is generated from the first conductive layer 61. This magnetic field includes a component in the second direction D2. This magnetic field is applied to the first magnetic element 11. This magnetic field functions as a bias magnetic field. In the sensor 111, the magnetic field generated from the first conductive layer 61 allows the magnetic field to be detected Ht to be detected in a region where the rate of change of the first electrical resistance R1 of the first magnetic element 11 is high. For example, high detection sensitivity can be obtained. According to the embodiment, a sensor capable of improving characteristics can be provided.

[0070] 8(a), in the sensor 111, the length L61 of the first conductive layer 61 along the second direction D2 is preferably longer than the length Le1 of the first magnetic element 11 along the second direction D2. The magnetic field generated from the first conductive layer 61 is applied to the first magnetic element 11 uniformly and effectively.

[0071] The first current i1 (and the first magnetic field Ha) described with reference to FIGS. 4(a) and 4(b) may also be applied to the sensor 111. For example, as shown in FIG. 7, a first circuit 71 is electrically connected to the first conductive portion 21e and the first other conductive portion 21f. The first circuit 71 can supply the first current i1 to the first conductive member 21. The first current i1 includes an AC component ia1. The minimum value of the first current i1 has the first polarity. The maximum value of the first current i1 has the first polarity. In this case as well, the first electrical resistance R1 of the first magnetic element 11 changes in response to a change in the first current i1.

[0072] 7, in the sensor 111, the control unit 70 may include a second circuit 72 and a third circuit 73. The second circuit 72 is capable of supplying a detection current id to the first magnetic element 11. The third circuit 73 is capable of detecting a value corresponding to a change in the first electrical resistance R1.

[0073] 9(a) to 9(c) are schematic views illustrating the sensor according to the first embodiment. 9A is a plan view illustrating the first magnetic element 11 and the first conductive member 21 in the sensor 112 according to the embodiment. FIG. 9B is a cross-sectional view. In the sensor 112, the first magnetic part 41, the first opposing magnetic part 41A, and the first conductive layer 61 may be omitted.

[0074] In the sensor 112, negative exchange coupling occurs between the first magnetic layer 11a and the first opposing magnetic layer 11b. For example, when the first non-magnetic layer 11n is a Cu layer, the thickness of the Cu layer is approximately 2 nm or less. Negative exchange coupling may be obtained by adjusting the conditions (e.g., thickness and magnetic properties) of the first magnetic layer 11a, the first opposing magnetic layer 11b, and the first non-magnetic layer 11n.

[0075] In the sensor 112, for example, the first magnetic layer 11a is a pinned layer. The first opposing magnetic layer 11b is a magnetization free layer. The magnetization 11aM of the first magnetic layer 11a is along the second direction D2. The magnetization 11bM of the first opposing magnetic layer 11b includes a component in the second direction D2. The magnetization 11bM includes a component in the opposite direction to the magnetization 11aM.

[0076] 9(c) illustrates the magnetic characteristics of the first magnetic element 11 in the sensor 112. The horizontal axis of FIG. 9(c) is the magnetic field Hy applied to the first magnetic element 11. The magnetic field Hy is along the second direction D2. The vertical axis is the first electrical resistance R1. The vertical axis may correspond to the voltage Ve (see FIG. 1).

[0077] As shown in FIG. 9(c), the magnetic characteristic (first electrical resistance R1) of the first magnetic element 11 shifts and changes relative to the zero magnetic field Hy. For example, let H1 and H2 be the two magnetic fields Hy that are half the width of the change in the first electrical resistance R1. The magnetic field (H1+H2) / 2, which is half the sum of the magnetic fields H1 and H2, is negative. This shift occurs due to the effect of negative exchange coupling.

[0078] In the sensor 112, the shifted magnetic characteristics allow the detection target magnetic field Ht to be detected in a region where the rate of change of the first electrical resistance R1 of the first magnetic element 11 is high. For example, high detection sensitivity can be obtained. According to the embodiment, a sensor capable of improving characteristics can be provided.

[0079] The first circuit 71, second circuit 72, and third circuit 73 described with respect to the sensor 111 may be applied to the sensor 112. The first current i1 (and the first magnetic field Ha) described with respect to FIGS. 4(a) and 4(b) may also be applied to the sensor 112. The first current i1 includes an AC component ia1. The minimum value of the first current i1 has a first polarity. The maximum value of the first current i1 has a first polarity.

[0080] 10(a) to 10(c) are schematic views illustrating the sensor according to the first embodiment. Fig. 10(a) is a plan view illustrating the first magnetic element 11 and the first conductive member 21 in the sensor 113 according to the embodiment. Fig. 10(b) is a cross-sectional view. In the sensor 113, the first magnetic part 41, the first opposing magnetic part 41A, and the first conductive layer 61 may be omitted.

[0081] In the sensor 113, exchange coupling occurs between the first magnetic layer 11a and the first opposing magnetic layer 11b. For example, when the first non-magnetic layer 11n is a Cu layer, the thickness of the Cu layer is approximately 2 nm or less. b. and the first nonmagnetic layer 11n article By adjusting the conditions (eg, thickness and magnetic properties), exchange coupling can be achieved.

[0082] In the sensor 113, for example, the first magnetic layer 11a is a pinned layer. The first opposing magnetic layer 11b is a magnetization free layer. The magnetization 11aM of the first magnetic layer 11a is along the third direction D3. The magnetization 11bM of the first opposing magnetic layer 11b includes a component in the third direction D3. The magnetization 11bM includes a component in the same direction as the magnetization 11aM. With this configuration, the magnetic properties of the first magnetic element 11 shift the first magnetic field Ha applied from the outside.

[0083] 10(c) illustrates the magnetic characteristics of the first magnetic element 11 in the sensor 112. The horizontal axis of FIG. 10(c) represents the magnetic field Hx applied to the first magnetic element 11. The magnetic field Hx is aligned with the third direction D3. The vertical axis represents the first electrical resistance R1. The vertical axis may correspond to the voltage Ve (see FIG. 1).

[0084] As shown in FIG. 10(c), the magnetic characteristic (first electrical resistance R1) of the first magnetic element 11 shifts and changes with respect to the magnetic field Hx of 0. For example, the shift becomes 1 / 2 of the width of the change in the first electrical resistance R1. Magnetic field The field Hm is not 0. The magnetic field Hm can be negative or positive. This shift occurs due to the effect of exchange coupling.

[0085] In the sensor 113, the shifted magnetic characteristics result in a first magnetic field Ha, as shown in FIG. 4, in which both the minimum and maximum values ​​have a first polarity (e.g., positive). This allows the detection target magnetic field Ht to be detected in a region where the rate of change of the first electrical resistance R1 of the first magnetic element 11 is high. For example, high detection sensitivity can be obtained. According to the embodiment, a sensor capable of improving characteristics can be provided.

[0086] The first circuit 71, the second circuit 72, and the third circuit 73 described in relation to the sensor 111 may be applied to the sensor 113. 3 4(a) and 4(b) may also be applied. The first current i1 (and the first magnetic field Ha) may include an AC component ia1. The minimum and maximum values ​​of the first current i1 may have a first polarity. In the sensor 113, the DC component id1 of the first current i1 can be modified in various ways because the above shift can be used. For example, the first current i1 does not need to include the DC component id1.

[0087] FIG. 11 and FIG. 12(a) to FIG. 12(c) are schematic views illustrating the sensor according to the first embodiment. Fig. 12(a) is a plan view, Fig. 12(b) is a cross-sectional view taken along line A1-A2 in Fig. 12(a), and Fig. 12(c) is a cross-sectional view taken along line B1-B2 in Fig. 12(a).

[0088] 11 , the sensor 114 according to the embodiment also includes an element unit 10U. The element unit 10U includes a first element 10A. In the sensor 114, the first element 10A includes a first magnetic element 11, a first conductive member 21, and a first magnetic unit 41. In the sensor 114, the position of the first magnetic unit 41 is different from that in the sensor 110. Except for this, the configuration of the sensor 114 may be the same as the configuration of the sensor 110.

[0089] As shown in FIG. 12(b), in the sensor 114, the first magnetic element 11 also includes a first magnetic layer 11a and a first opposing magnetic layer 11b. The direction from the first magnetic layer 11a to the first opposing magnetic layer 11b is a first direction D1. As shown in FIG. 12(a), the length Le1 of the first magnetic element 11 along the second direction D2 is longer than the length Le2 of the first magnetic element 11 along the third direction D3. The second direction D2 intersects with the first direction D1. The third direction D3 intersects with a plane including the first direction D1 and the second direction D2.

[0090] 11 and 12(a), the first conductive member 21 includes a first conductive portion 21e and a first other conductive portion 21f. The direction from the first other conductive portion 21f to the first conductive portion 21e is along the second direction D2.

[0091] As shown in FIG. 11, the direction from the first magnetic part 41 to the first magnetic element 11 is along the third direction D3. In the sensor 114, a bias magnetic field is applied from the first magnetic part 41 to the first magnetic element 11. As a result, the magnetic characteristics of the first magnetic element 11 are shifted relative to the zero of the externally applied magnetic field Hx. For example, as shown in FIG. 4, a first magnetic field Ha is obtained in which both the minimum and maximum values ​​have a first polarity (e.g., positive). As a result, for example, the magnetic field Ht to be detected can be detected in a region where the rate of change of the first electrical resistance R1 of the first magnetic element 11 is high. For example, high detection sensitivity can be obtained. According to the embodiment, a sensor capable of improving characteristics can be provided.

[0092] 12(a), the length L41 of the first magnetic part 41 along the second direction D2 is preferably longer than the length Le1 of the first magnetic element 11 along the second direction D2. This allows the bias magnetic field generated from the first magnetic part 41 to be uniformly and effectively applied to the first magnetic element 11. For example, the first magnetic part 41 includes a ferromagnetic material.

[0093] 11 , the first element 10A may further include a first opposing magnetic portion 41A. At least a portion of the first magnetic element 11 is located between the first magnetic portion 41 and the first opposing magnetic portion 41A in the third direction D3. The first magnetic portion 41 and the first opposing magnetic portion 41A allow the bias magnetic field to be applied more effectively to the first magnetic element 11. For example, the material of the first opposing magnetic portion 41A may be the same as the material of the first magnetic portion 41.

[0094] 11, the direction of magnetization 41M of the first magnetic part 41 includes a component in the third direction D3. The direction of magnetization 41AM of the first opposing magnetic part 41A includes a component in the third direction D3. The direction of magnetization 41M of the first magnetic part 41 is the same as the direction of magnetization 41AM of the first opposing magnetic part 41A.

[0095] 12(c), for example, at least a part of the first magnetic layer 11a and the first opposing magnetic layer 11b may be provided between the first magnetic part 41 and the first opposing magnetic part 41A. The positional relationship between the first conductive member 21 and the first magnetic part 41 is arbitrary. The positional relationship between the first conductive member 21 and the first opposing magnetic part 41A is arbitrary.

[0096] In the sensor 114, a bias magnetic field is applied to the first magnetic element 11 by the first magnetic part 41 (and the first opposing magnetic part 41A). This bias magnetic field includes a component in the third direction D3. Such a bias magnetic field performs the function of, for example, the DC component id1 included in the first current i1. In the sensor 114, the first current i1 does not need to include the DC component id1.

[0097] As shown in FIG. 11 , in the sensor 114, the control unit 70 may include a first circuit 71. The first circuit 71 is electrically connected to the first conductive portion 21e and the first other conductive portion 21f. The first circuit 71 is capable of supplying a first current i1 to the first conductive member 21. The first current i1 includes an AC component ia1. The first current i1 may be substantially free of a DC component id1. This simplifies the configuration of the first circuit 71.

[0098] In the sensor 114, the first electrical resistance R1 of the first magnetic element 11 also changes in response to a change in the first current i1. The control unit 70 may include a second circuit 72 and a third circuit 73. The second circuit 72 is capable of supplying a detection current id to the first magnetic element 11. The third circuit 73 is capable of detecting a value corresponding to the change in the first electrical resistance R1.

[0099] Hereinafter, some examples of sensors according to the embodiments will be described. FIG. 13 is a schematic view illustrating the sensor according to the first embodiment. 13, for ease of understanding, the first magnetic element 11 is depicted shifted in the X-axis direction from the first conductive member 21. The first magnetic element 11 may overlap the first conductive member 21 in the Z-axis direction.

[0100] As shown in FIG. 13 , in a sensor 121 according to the embodiment, the element unit 10U includes a first element 10A and a first resistor 31. The first resistor 31 includes a first resistance portion 31e and a first other resistance portion 31f. In this example, the first element portion 11e is electrically connected to a second circuit 72. The first other element portion 11f is electrically connected to the first resistance portion 31e. The first other resistance portion 31f is electrically connected to the second circuit 72. The third circuit 73 detects a change in the potential at the connection point between the first other element portion 11f and the first resistance portion 31e.

[0101] FIG. 14 and FIGS. 15(a) to 15(c) are schematic views illustrating the sensor according to the first embodiment. 14, in a sensor 122 according to the embodiment, the element unit 10U further includes a second element 10B. The second element 10B includes a second magnetic element 12 and a second conductive member 22.

[0102] 14, for ease of viewing, the first magnetic element 11 is depicted shifted from the first conductive member 21 in the X-axis direction. The first magnetic element 11 may overlap the first conductive member 21 in the Z-axis direction. In FIG. 14, for ease of viewing, the second magnetic element 12 is depicted shifted from the second conductive member 22 in the X-axis direction. The second magnetic element 12 may overlap the second conductive member 22 in the Z-axis direction.

[0103] 15(b) and 15(c), the second magnetic element 12 includes a second magnetic layer 12a and a second opposing magnetic layer 12b. In this example, the second magnetic element 12 includes a second non-magnetic layer 12n. The second non-magnetic layer 12n is provided between the second magnetic layer 12a and the second opposing magnetic layer 12b.

[0104] In the second magnetic element 12, the second magnetic layer 12a may be, for example, one of a reference layer and a magnetization free layer. The second opposing magnetic layer 12b may be, for example, the other of a reference layer and a magnetization free layer. The change in the electrical resistance of the second magnetic element 12 is based on, for example, a change in the angle between the magnetization 12aM of the second magnetic layer 12a and the magnetization 12bM of the second opposing magnetic layer 12b in response to a magnetic field applied to the second magnetic element 12.

[0105] 14, the second conductive member 22 includes a second conductive portion 22e and a second other conductive portion 22f. The direction from the second conductive portion 22e to the second other conductive portion 22f is along the second direction D2.

[0106] 14, in this example, the first conductive portion 21e is electrically connected to a first circuit 71. The first other conductive portion 21f is electrically connected to a second other conductive portion 22f. The second conductive portion 22e is electrically connected to the first circuit 71. The first circuit 71 is capable of supplying a first current i1 to the first conductive member 21 and the second conductive member 22.

[0107] The first magnetic element 11 includes a first element portion 11e and a first other element portion 11f. The first element portion 11e corresponds to the first conductive portion 21e. The first other element portion 11f corresponds to the first other conductive portion 21f. The direction from the first element portion 11e to the first other element portion 11f is a first direction.

[0108] The second magnetic element 12 includes a second element portion 12e and a second other element portion 12f. The second element portion 12e corresponds to the second conductive portion 22e. The second other element portion 12f corresponds to the second other conductive portion 22f. The direction from the second element portion 12e to the second other element portion 12f is a second direction.

[0109] The detection current id supplied from the second circuit 72 flows in a first direction through the first magnetic element 11 and in a second direction through the second magnetic element 12. When the first current i1 supplied from the first circuit 71 flows in the first direction through the first conductive member 21, the first current i1 flows in the second conductive member 22 in the opposite direction to the second direction.

[0110] FIG. 16 is a schematic view illustrating the sensor according to the first embodiment. As shown in FIG. 16 , in a sensor 123 according to the embodiment, an element unit 10U includes a first element 10A, a second element 10B, a first resistor 31, and a second resistor 32. The first element 10A includes a first magnetic element 11 and a first conductive member 21. The second element 10B includes a second magnetic element 12 and a second conductive member 22. In FIG. 16 , for ease of viewing, the first magnetic element 11 is depicted shifted from the first conductive member 21 in the X-axis direction. In FIG. 16 , for ease of viewing, the second magnetic element 12 is depicted shifted from the second conductive member 22 in the X-axis direction.

[0111] The first magnetic element 11 includes a first element portion 11e and a first other element portion 11f. The first element portion 11e corresponds to the first conductive portion 21e. The first other element portion 11f corresponds to the first other conductive portion 21f. The direction from the first element portion 11e to the first other element portion 11f is a first direction.

[0112] The second element 10B includes a second magnetic element 12 and a second conductive member 22. The second conductive member 22 includes a second conductive portion 22e and a second other conductive portion 22f. The direction from the second conductive portion 22e to the second other conductive portion 22f is along the second direction D2.

[0113] The first resistor 31 includes a first resistor portion 31e and a first other resistor portion 31f. The direction from the first resistor portion 31e to the first other resistor portion 31f is along the second direction D2. The second resistor 32 includes a second resistor portion 32e and a second other resistor portion 32f. The direction from the second resistor portion 32e to the second other resistor portion 32f is along the second direction D2.

[0114] The second magnetic element 12 includes a second element portion 12e and a second other element portion 12f. The second element portion 12e corresponds to the second conductive portion 22e. The second other element portion 12f corresponds to the second other conductive portion 22f. The direction from the second element portion 12e to the second other element portion 12f is a second direction.

[0115] The first element portion 11e is electrically connected to the second circuit 72. The first other element portion 11f is electrically connected to the second resistance portion 32e. The second other resistance portion 32f is electrically connected to the second circuit 72.

[0116] The first resistance portion 31e is electrically connected to the second circuit 72. The first other resistance portion 31f is electrically connected to the second element portion 12e. The second other element portion 12f is electrically connected to the second circuit 72.

[0117] The sense current id flows through the first magnetic element 11 in a first direction and through the second magnetic element 12 in a second direction.

[0118] 16 , in this example, the first conductive portion 21e is electrically connected to the first circuit 71. The first other conductive portion 21f is electrically connected to the second conductive portion 22e. The second other conductive portion 22f is electrically connected to the first circuit 71. The first circuit 71 is capable of supplying a first current i1 to the first conductive member 21 and the second conductive member 22.

[0119] When the first current i1 flows through the first conductive member 21 in a first direction, the first current i1 flows through the second conductive member 22 in a second direction.

[0120] The third circuit 73 can detect a potential difference between the first connection point CP1 and the second connection point CP2. The first connection point CP1 is a connection point between the first other element portion 11f and the second resistance portion 32e. The second connection point CP2 is a connection point between the first other resistance portion 31f and the second element portion 12e.

[0121] The third circuit 73 may include a differential amplifier 76 and a processing circuit 75. The differential amplifier 76 detects a potential difference between the first connection point CP1 and the second connection point CP2. The processing circuit 75 processes an output signal from the differential amplifier 76. The processing circuit 75 may include, for example, at least one of a lock-in amplifier, a band-pass filter circuit, and an FFT (Fast Fourier Transform) circuit. The processing circuit 75 extracts, for example, a first frequency component of the differential amplifier 76. The first frequency is, for example, the frequency of an AC component ia1 of the first current i1. The first frequency is, for example, the frequency of an AC magnetic field component Ha1 of the first magnetic field Ha. The first frequency may include, for example, a harmonic component of the AC component ia1 of the first current i1. The first frequency may include, for example, a harmonic component of the AC magnetic field component Ha1 of the first magnetic field Ha.

[0122] In this way, the element unit 10U may include a bridge circuit 10V (see FIG. 16) including the first element 10A. The second circuit 72 is capable of supplying a detection current id to the bridge circuit 10V. The third circuit 73 is capable of detecting a value corresponding to the difference between the potential at a first midpoint (e.g., first connection point CP1) of the bridge circuit 10V and the potential at a second midpoint (e.g., second connection point CP2) of the bridge circuit 10V.

[0123] FIG. 17 is a schematic view illustrating the sensor according to the first embodiment. 17, in a sensor 124 according to the embodiment, the element unit 10U includes a first element 10A, a first resistor 31, a second resistor 32, and a third resistor 33. The third resistor 33 includes a third resistor portion 33e and a third other resistor portion 33f. The direction from the third resistor portion 33e to the third other resistor portion 33f is along the second direction D2.

[0124] In this example, the first element portion 11e is electrically connected to the second circuit 72. The first other element portion 11f is electrically connected to the second resistance portion 32e. The second other resistance portion 32f is electrically connected to the second circuit 72. The first resistance portion 31e is electrically connected to the second circuit 72. The first other resistance portion 31f is electrically connected to the third resistance portion 33e. The third other resistance portion 33f is electrically connected to the second circuit 72. The first connection point CP1 is a connection point between the first other element portion 11f and the second resistance portion 32e. The second connection point CP2 is a connection point between the first other resistance portion 31f and the third resistance portion 33e.

[0125] FIG. 18, FIG. 19(a) to FIG. 19(c), and FIG. 20(a) to FIG. 20(c) are schematic views illustrating the sensor according to the first embodiment. 18, in a sensor 125 according to the embodiment, an element unit 10U includes a first element 10A, a second element 10B, a third element 10C, and a fourth element 10D. The first element 10A includes a first magnetic element 11 and a first conductive member 21. The second element 10B includes a second magnetic element 12 and a second conductive member 22. The third element 10C includes a third magnetic element 13 and a third conductive member 23. The fourth element 10D includes a fourth magnetic element 14 and a fourth conductive member 24.

[0126] 19(b) and 19(c), the third magnetic element 13 includes a third magnetic layer 13a and a third opposing magnetic layer 13b. In this example, the third magnetic element 13 includes a third non-magnetic layer 13n. The third non-magnetic layer 13n is provided between the third magnetic layer 13a and the third opposing magnetic layer 13b.

[0127] In the third magnetic element 13, the third magnetic layer 13a may be, for example, one of a reference layer and a magnetization free layer. The third opposing magnetic layer 13b may be, for example, the other of a reference layer and a magnetization free layer. The change in the electrical resistance of the third magnetic element 13 is based on, for example, a change in the angle between the magnetization 13aM of the third magnetic layer 13a and the magnetization 13bM of the third opposing magnetic layer 13b in response to a magnetic field applied to the third magnetic element 13.

[0128] 20(b) and 20(c), the fourth magnetic element 14 includes a fourth magnetic layer 14a and a fourth opposing magnetic layer 14b. In this example, the fourth magnetic element 14 includes a fourth non-magnetic layer 14n. The fourth non-magnetic layer 14n is provided between the fourth magnetic layer 14a and the fourth opposing magnetic layer 14b.

[0129] In the fourth magnetic element 14, the fourth magnetic layer 14a may be, for example, one of a reference layer and a magnetization free layer. The fourth opposing magnetic layer 14b may be, for example, the other of a reference layer and a magnetization free layer. The change in the electrical resistance of the fourth magnetic element 14 is based on, for example, a change in the angle between the magnetization 14aM of the fourth magnetic layer 14a and the magnetization 14bM of the fourth opposing magnetic layer 14b in response to a magnetic field applied to the fourth magnetic element 14.

[0130] 19(a), the third conductive member 23 includes a third conductive portion 23e and a third other conductive portion 23f. The direction from the third conductive portion 23e to the third other conductive portion 23f is along the second direction D2.

[0131] 20(a), the fourth conductive member 24 includes a fourth conductive portion 24e and a fourth other conductive portion 24f. The direction from the fourth conductive portion 24e to the fourth other conductive portion 24f is along the second direction D2.

[0132] 18, the first magnetic element 11 includes a first element portion 11e and a first other element portion 11f. The first element portion 11e corresponds to the first conductive portion 21e. The first other element portion 11f corresponds to the first other conductive portion 21f. The direction from the first element portion 11e to the first other element portion 11f is a first direction.

[0133] 18, the second magnetic element 12 includes a second element portion 12e and a second other element portion 12f. The second element portion 12e corresponds to the second conductive portion 22e. The second other element portion 12f corresponds to the second other conductive portion 22f. The direction from the second element portion 12e to the second other element portion 12f is a second direction.

[0134] 18, the third magnetic element 13 includes a third element portion 13e and a third other element portion 13f. The third element portion 13e corresponds to the third conductive portion 23e. The third other element portion 13f corresponds to the third other conductive portion 23f. The direction from the third element portion 13e to the third other element portion 13f is a third direction.

[0135] 18, the fourth magnetic element 14 includes a fourth element portion 14e and a fourth other element portion 14f. The fourth element portion 14e corresponds to the fourth conductive portion 24e. The fourth other element portion 14f corresponds to the fourth other conductive portion 24f. The direction from the fourth element portion 14e to the fourth other element portion 14f is a fourth direction.

[0136] The first element portion 11e is electrically connected to the second circuit 72. The first other element portion 11f is electrically connected to the second element portion 12e. The second other element portion 12f is electrically connected to the second circuit 72.

[0137] The third element portion 13e is electrically connected to the second circuit 72. The third other element portion 13f is electrically connected to the fourth element portion 14e. The fourth other element portion 14f is electrically connected to the second circuit 72.

[0138] The detection current id flows through the first magnetic element 11 in a first direction, through the second magnetic element 12 in a second direction, through the third magnetic element 13 in a third direction, and through the fourth magnetic element 14 in a fourth direction.

[0139] In this example, the first conductive portion 21e is electrically connected to the first circuit 71. The first other conductive portion 21f is electrically connected to the fourth other conductive portion 24e. The fourth other conductive portion 24f is electrically connected to the third other conductive portion 23f. The third conductive portion 23e is electrically connected to the second other conductive portion 22f. The second conductive portion 22e is electrically connected to the first circuit 71.

[0140] When the first current i1 supplied from the first circuit 71 flows through the first conductive member 21 in a first direction, the first current i1 flows through the second conductive member 22 in a direction opposite to the second direction, the first current i1 flows through the third conductive member 23 in a direction opposite to the third direction, and the first current i1 flows through the fourth conductive member 24 in a fourth direction.

[0141] The first connection point CP1 is a connection point between the first other element portion 11f and the second element portion 12e, and the second connection point CP2 is a connection point between the third other element portion 13f and the fourth element portion 14e.

[0142] FIG. 21 is a schematic view illustrating the sensor according to the first embodiment. 21 , in a sensor 126 according to the embodiment, an element unit 10U includes a first element 10A, a second element 10B, a third element 10C, and a fourth element 10D. In the sensor 126, the connection relationship of the plurality of conductive members is different from the connection relationship of the plurality of conductive members in the sensor 125. In the sensor 116, the connection relationship of the plurality of magnetic elements may be the same as the connection relationship of the plurality of magnetic elements in the sensor 125.

[0143] In sensor 126, first conductive portion 21e and third conductive portion 23e are electrically connected to first circuit 71. First other conductive portion 21f is electrically connected to second conductive portion 22e. Third other conductive portion 23f is electrically connected to fourth conductive portion 24e. Second other conductive portion 22f and fourth other conductive portion 24f are electrically connected to first circuit 71.

[0144] In the sensor 126, the magnetization direction in the reference layer of the first magnetic element 11 is the same as the magnetization direction in the reference layer of the fourth magnetic element 14. The magnetization direction in the reference layer of the second magnetic element 12 is the same as the magnetization direction in the reference layer of the third magnetic element 13. The magnetization directions in the reference layer of the first magnetic element 11 and the fourth magnetic element 14 are opposite to the magnetization directions in the reference layer of the second magnetic element 12 and the third magnetic element 13. The configuration of the sensor 116 also makes it possible to provide a sensor that is able to suppress the influence of noise and improve its characteristics.

[0145] The configurations of the sensors 110 to 114 may be applied to the above-described sensors 121 to 126. For example, the first magnetic portion 41 (and the first opposing magnetic portion 41A) described with respect to the sensor 110 may be provided in the sensors 121 to 126. For example, the second element 10B, the third element 10C, and the fourth element 10D may each include a magnetic member similar to the first magnetic portion 41 (and the first opposing magnetic portion 41A) described with respect to the sensor 110.

[0146] For example, the first conductive layer 61 described in relation to the sensor 111 may be provided in the sensors 121 to 126. For example, the characteristics of the first magnetic element 11 described in relation to the sensor 112 may be applied to the sensors 121 to 126. For example, the characteristics of the first magnetic element 11 described in relation to the sensor 113 may be applied to the sensors 121 to 126. For example, the first magnetic portion 41 (and the first opposing magnetic portion 41A) described in relation to the sensor 114 may be provided in the sensors 121 to 126.

[0147] Each of the second element 10B, the third element 10C, and the fourth element 10D may include a magnetic member similar to the first magnetic portion 41 (and the first opposing magnetic portion 41A) described in relation to the sensor 114.

[0148] Each of the second element 10B, the third element 10C, and the fourth element 10D may have the configuration of the first element 10A in the sensors 110 to 114.

[0149] For example, in each of the sensors 110 to 114, the element unit 10U may include a bridge circuit 10V including a first element 10A. The second circuit 72 is capable of supplying a detection current id to the bridge circuit 10V. The third circuit 73 is capable of detecting a value corresponding to the difference between the potential at a first midpoint (e.g., first connection point CP1) of the bridge circuit 10V and the potential at a second midpoint (e.g., second connection point CP2) of the bridge circuit 10V.

[0150] When the element section 10U includes the bridge circuit 10V, the fourth circuit 74 may be provided in common to the first element 10A, the second element 10B, the third element 10C, and the fourth element 10D.

[0151] FIG. 22 is a schematic view illustrating the sensor according to the first embodiment. 22, in sensor 131, first element 10A includes a first conductive layer 61. A second current i2 is supplied to first conductive layer 61 from a fourth circuit 74. Other configurations of sensor 131 may be similar to the configuration of sensor 121.

[0152] FIG. 23 is a schematic view illustrating the sensor according to the first embodiment. 23 , in sensor 132, first element 10A includes a first conductive layer 61, and second element 10B includes a second conductive layer 62. A second current i2 is supplied to first conductive layer 61 and second conductive layer 62 from fourth circuit 74. Other configurations of sensor 132 may be similar to those of sensor 122.

[0153] For example, the second conductive layer 62 includes a second conductive layer portion 62e and a second other conductive layer portion 62f. The direction from the second conductive layer portion 62e to the second other conductive layer portion 62f is along the third direction D3. A portion of the second current i2 can flow between the second conductive layer portion 62e and the second other conductive layer portion 62f.

[0154] FIG. 24 is a schematic view illustrating the sensor according to the first embodiment. 24 , in sensor 133, first element 10A includes a first conductive layer 61, and second element 10B includes a second conductive layer 62. A second current i2 is supplied to first conductive layer 61 and second conductive layer 62 from fourth circuit 74. Other configurations of sensor 133 may be similar to those of sensor 123.

[0155] FIG. 25 is a schematic view illustrating the sensor according to the first embodiment. 25, in sensor 134, first element 10A includes a first conductive layer 61. A second current i2 is supplied to first conductive layer 61 from a fourth circuit 74. Other configurations of sensor 134 may be similar to the configuration of sensor 124.

[0156] FIG. 26 is a schematic view illustrating the sensor according to the first embodiment. 26, in sensor 135, first element 10A includes a first conductive layer 61. Second element 10B includes a second conductive layer 62. Third element 10C includes a third conductive layer 63. Fourth element 10D includes a fourth conductive layer 64. A second current i2 is supplied to these conductive layers from a fourth circuit 74. Other configurations of sensor 135 may be similar to those of sensor 125.

[0157] For example, the third conductive layer 63 includes a third conductive layer portion 63e and a third other conductive layer portion 63f. The direction from the third conductive layer portion 63e to the third other conductive layer portion 63f is along the third direction D3. A part of the second current i2 can flow between the third conductive layer portion 63e and the third other conductive layer portion 63f.

[0158] For example, the fourth conductive layer 64 includes a fourth conductive layer portion 64e and a fourth other conductive layer portion 64f. The direction from the fourth conductive layer portion 64e to the fourth other conductive layer portion 64f is along the third direction D3. A portion of the second current i2 can flow between the fourth conductive layer portion 64e and the fourth other conductive layer portion 64f.

[0159] FIG. 27 is a schematic view illustrating the sensor according to the first embodiment. 27, in sensor 136, first element 10A includes a first conductive layer 61. Second element 10B includes a second conductive layer 62. Third element 10C includes a third conductive layer 63. Fourth element 10D includes a fourth conductive layer 64. A second current i2 is supplied to these conductive layers from a fourth circuit 74. Other configurations of sensor 136 may be similar to those of sensor 126.

[0160] (Second embodiment) The second embodiment relates to an examination device, which may include a diagnostic device, as will be described later.

[0161] FIG. 28 is a schematic perspective view showing an inspection device according to the second embodiment. As shown in Fig. 28, an inspection device 710 according to the second embodiment includes a sensor 150a (magnetic sensor) and a processing unit 770. The sensor 150a may be the sensor according to the first embodiment or a variation thereof. The processing unit 770 processes an output signal obtained from the sensor 150a. The processing unit 770 may compare the signal obtained from the sensor 150a with a reference value. The processing unit 770 can output an inspection result based on the processing result.

[0162] For example, the test object 680 is tested by the test device 710. The test object 680 is, for example, an electronic device (including a semiconductor circuit, etc.). The test object 680 may also be, for example, a battery 610.

[0163] For example, the sensor 150a according to the embodiment may be used together with the battery 610. For example, the battery system 600 includes the battery 610 and the sensor 150a. The sensor 150a can detect a magnetic field generated by a current flowing through the battery 610.

[0164] FIG. 29 is a schematic plan view showing an inspection device according to the second embodiment. 29, the sensor 150a includes, for example, a plurality of sensors according to the embodiment. In this example, the sensor 150a includes a plurality of sensors (such as element units 10U of the sensors 110). The plurality of sensors are arranged, for example, along two directions (such as the X-axis direction and the Y-axis direction). The plurality of sensors 110 are provided, for example, on a substrate.

[0165] The sensor 150a can detect a magnetic field generated by a current flowing through the inspection target 680 (which may be, for example, a battery 610). For example, when the battery 610 approaches an abnormal state, an abnormal current may flow through the battery 610. By detecting the abnormal current with the sensor 150a, it is possible to know a change in the state of the battery 610. For example, with the sensor 150a placed close to the battery 610, the entire battery 610 can be inspected in a short time using sensor group driving means in two directions. The sensor 150a may be used to inspect the battery 610 during the manufacture of the battery 610.

[0166] The sensor according to the embodiment can be applied to an inspection device 710 such as a diagnostic device, for example. FIG. 30 is a schematic diagram showing a sensor and an inspection device according to an embodiment. 30, a diagnostic device 500, which is an example of an inspection device 710, includes a sensor 150. The sensor 150 includes the sensors described in relation to the first embodiment and variations thereof.

[0167] In the diagnostic device 500, the sensor 150 is, for example, a magnetoencephalograph. The magnetoencephalograph detects magnetic fields emitted by cranial nerves. When the sensor 150 is used in a magnetoencephalograph, the size of the magnetic element included in the sensor 150 is, for example, 1 mm or more and less than 10 mm. This size is, for example, the length including the MFC.

[0168] As shown in Fig. 30, the sensor 150 (magnetoencephalograph) is worn on, for example, the head of a human body. The sensor 150 (magnetoencephalograph) includes a sensor unit 301. The sensor 150 (magnetoencephalograph) may include a plurality of sensor units 301. The number of the plurality of sensor units 301 is, for example, approximately 100 (for example, not less than 50 and not more than 150). The plurality of sensor units 301 are provided on a flexible base 302.

[0169] The sensor 150 may include, for example, a circuit for differential detection, etc. The sensor 150 may also include a sensor (for example, a potential terminal or an acceleration sensor) separate from the sensor.

[0170] The size of the sensor 150 is smaller than that of a conventional SQUID sensor. This makes it easy to install multiple sensor units 301. It also makes it easy to install multiple sensor units 301 together with other circuits. It also makes it easy for multiple sensor units 301 to coexist with other sensors.

[0171] The base 302 may include an elastic material such as silicone resin. For example, a plurality of sensor units 301 are connected to the base 302. The base 302 can be attached to the head, for example.

[0172] The input / output cord 303 of the sensor unit 301 is connected to a sensor driving unit 506 and a signal input / output unit 504 of the diagnostic device 500. The sensor unit 301 performs magnetic field measurement based on power from the sensor driving unit 506 and a control signal from the signal input / output unit 504. The measurement result is input to the signal input / output unit 504. The signal obtained by the signal input / output unit 504 is supplied to a signal processing unit 508. The signal processing unit 508 performs processing such as noise removal, filtering, amplification, and signal calculation. The signal processed by the signal processing unit 508 is supplied to a signal analysis unit 510. The signal analysis unit 510 extracts, for example, a specific signal for magnetoencephalography. The signal analysis unit 510 performs signal analysis, for example, to align the signal phase.

[0173] The output of the signal analysis unit 510 (data after signal analysis) is supplied to a data processing unit 512. The data processing unit 512 performs data analysis. In this data analysis, for example, image data such as MRI (Magnetic Resonance Imaging) can be incorporated. In this data analysis, for example, scalp potential information such as EEG (Electroencephalogram) can be incorporated. By the data analysis, for example, neural firing point analysis or inverse problem analysis can be performed.

[0174] The results of the data analysis are supplied to, for example, the imaging diagnostic unit 516. Imaging is performed in the imaging diagnostic unit 516. The imaging assists diagnosis.

[0175] The above series of operations is controlled, for example, by a control mechanism 502. For example, necessary data such as primary signal data or metadata during data processing is stored in a data server. The data server and the control mechanism may be integrated.

[0176] The diagnostic device 500 according to the embodiment includes a sensor 150 and a processing unit that processes an output signal obtained from the sensor 150. The processing unit includes, for example, at least one of a signal processing unit 508 and a data processing unit 512. The processing unit includes, for example, a computer.

[0177] In the sensor 150 shown in Fig. 30, the sensor unit 301 is placed on the head of the human body. The sensor unit 301 may also be placed on the chest of the human body. This allows for cardiac magnetism measurement. For example, the sensor unit 301 may also be placed on the abdomen of a pregnant woman. This allows for fetal heart rate testing.

[0178] The sensor device including the subject is preferably placed in a shielded room, which can suppress the influence of, for example, geomagnetism or magnetic noise.

[0179] For example, a mechanism may be provided to locally shield the measurement site on the human body or the sensor unit 301. For example, a shielding mechanism may be provided in the sensor unit 301. For example, effective shielding may be performed in signal analysis or data processing.

[0180] In the embodiment, the base 302 may be flexible or may not be substantially flexible. In the example shown in FIG. 30, the base 302 is a continuous film processed into a hat shape. The base 302 may be net-shaped. This may provide, for example, good wearability. For example, the base 302 may adhere better to the human body. The base 302 may be helmet-shaped and hard.

[0181] FIG. 31 is a schematic diagram showing an inspection device according to an embodiment. In the example shown in FIG. 31, a sensor section 301 is provided on a flat hard substrate 305 .

[0182] In the example shown in Fig. 31, the input and output of signals obtained from the sensor unit 301 are the same as the input and output described with reference to Fig. 30. In the example shown in Fig. 31, the processing of signals obtained from the sensor unit 301 is the same as the processing described with reference to Fig. 30.

[0183] There is a reference example in which a SQUID (Superconducting Quantum Interference Device) sensor is used as a device to measure weak magnetic fields such as those generated by living organisms. However, because this reference example uses superconductivity, the device is large and consumes a lot of power, which places a heavy burden on the subject (patient) to be measured.

[0184] According to the embodiment, the device can be made smaller. Power consumption can be reduced. The burden on the measurement subject (patient) can be reduced. According to the embodiment, the signal-to-noise ratio of magnetic field detection can be improved. Sensitivity can be improved.

[0185] The embodiment may include the following configurations (e.g., technical solutions). (Configuration 1) an element portion including a first element, the first element includes a first magnetic element, a first conductive member, and a first magnetic portion; the first magnetic element includes a first magnetic layer and a first opposing magnetic layer; a length of the first magnetic element along a second direction intersecting a first direction from the first magnetic layer to the first opposing magnetic layer is longer than a length of the first magnetic element along a third direction intersecting a plane including the first direction and the second direction; the first conductive member includes a first conductive portion and a first other conductive portion; a direction from the first other conductive portion to the first conductive portion is along the second direction; The sensor, wherein the direction from the first magnetic portion to the first magnetic element is along the second direction.

[0186] (Configuration 2) 2. The sensor of claim 1, wherein a length of the first magnetic portion along the third direction is longer than the length of the first magnetic element along the third direction.

[0187] (Configuration 3) 3. The sensor of claim 1, wherein the first magnetic portion includes a ferromagnetic material.

[0188] (Configuration 4) the first element further includes a first opposing magnetic portion, 4. The sensor according to any one of configurations 1 to 3, wherein at least a portion of the first magnetic element is located between the first magnetic portion and the first opposing magnetic portion in the second direction.

[0189] (Configuration 5) the magnetization direction of the first magnetic portion includes a component in the second direction, the magnetization direction of the first opposing magnetic portion includes a component in the second direction, 5. The sensor of configuration 4, wherein the orientation of the magnetization of the first magnetic portion is the same as the orientation of the magnetization of the first opposing magnetic portion.

[0190] (Configuration 6) a control unit including a first circuit; the first circuit is electrically connected to the first conductive portion and the first other conductive portion; the first circuit is capable of supplying a first current to the first conductive member; the first current includes an AC component; the first current minimum is of a first polarity; 6. The sensor according to any one of configurations 1 to 5, wherein the maximum value of the first current is of the first polarity.

[0191] (Configuration 7) the control unit includes a second circuit and a third circuit, the second circuit is capable of supplying a detection current to the first magnetic element; 7. The sensor of configuration 6, wherein the third circuit is capable of detecting a value corresponding to a change in the first electrical resistance of the first magnetic element.

[0192] (Configuration 8) an element portion including a first element, the first element includes a first magnetic element, a first conductive member, and a first conductive layer; the first magnetic element includes a first magnetic layer and a first opposing magnetic layer; a length of the first magnetic element along a second direction intersecting a first direction from the first magnetic layer to the first opposing magnetic layer is longer than a length of the first magnetic element along a third direction intersecting a plane including the first direction and the second direction; the first conductive member includes a first conductive portion and a first other conductive portion; a direction from the first other conductive portion to the first conductive portion is along the second direction; the first conductive layer overlaps the first magnetic element in the first direction; the first conductive layer includes a first conductive layer portion and a first other conductive layer portion; a direction from the first conductive layer portion to the first other conductive layer portion is along the third direction; A sensor in which a second current is capable of flowing between the first conductive layer portion and the first other conductive layer portion.

[0193] (Configuration 9) Equipped with a fourth circuit, 9. The sensor of claim 8, wherein the fourth circuit is capable of supplying the second current to the first conductive layer.

[0194] (Configuration 10) 10. The sensor of any one of configurations 8-9, wherein a length of the first conductive layer along the second direction is greater than the length of the first magnetic element along the second direction.

[0195] (Configuration 11) a control unit including a first circuit; the first circuit is electrically connected to the first conductive portion and the first other conductive portion; the first circuit is capable of supplying a first current to the first conductive member; the first current includes an AC component; the first current minimum is of a first polarity; 11. The sensor according to any one of configurations 8 to 10, wherein the maximum value of the first current is of the first polarity.

[0196] (Configuration 12) the control unit includes a second circuit and a third circuit, the second circuit is capable of supplying a detection current to the first magnetic element; 12. The sensor of claim 11, wherein the third circuit is capable of detecting a value corresponding to a change in the first electrical resistance of the first magnetic element.

[0197] (Configuration 13) an element portion including a first element, the first element includes a first magnetic element, a first conductive member, and a first magnetic portion; the first magnetic element includes a first magnetic layer and a first opposing magnetic layer; a length of the first magnetic element along a second direction intersecting a first direction from the first magnetic layer to the first opposing magnetic layer is longer than a length of the first magnetic element along a third direction intersecting a plane including the first direction and the second direction; the first conductive member includes a first conductive portion and a first other conductive portion; a direction from the first other conductive portion to the first conductive portion is along the second direction; The sensor, wherein the direction from the first magnetic portion to the first magnetic element is along the third direction.

[0198] (Configuration 14) 14. The sensor of claim 13, wherein a length of the first magnetic portion along the second direction is longer than the length of the first magnetic element along the second direction.

[0199] (Configuration 15) 15. The sensor of claim 13, wherein the first magnetic portion includes a ferromagnetic material.

[0200] (Configuration 16) the first element further includes a first opposing magnetic portion, 16. The sensor according to any one of configurations 13 to 15, wherein at least a portion of the first magnetic element is located between the first magnetic portion and the first opposing magnetic portion in the third direction.

[0201] (Configuration 17) the magnetization direction of the first magnetic portion includes a component in the third direction, the magnetization direction of the first opposing magnetic portion includes a component in the third direction, 17. The sensor of claim 16, wherein the orientation of the magnetization of the first magnetic portion is the same as the orientation of the magnetization of the first opposing magnetic portion.

[0202] (Configuration 18) a control unit including a first circuit; the first circuit is electrically connected to the first conductive portion and the first other conductive portion; the first circuit is capable of supplying a first current to the first conductive member; 18. The sensor according to any one of configurations 13 to 17, wherein the first current includes an AC component.

[0203] (Configuration 19) the control unit includes a second circuit and a third circuit, the second circuit is capable of supplying a detection current to the first magnetic element; 19. The sensor of claim 18, wherein the third circuit is capable of detecting a value corresponding to a change in a first electrical resistance of the first magnetic element.

[0204] (Configuration 20) The sensor according to any one of configurations 1 to 19, a processing unit for processing an output signal obtained from the sensor; An inspection device equipped with:

[0205] According to the embodiment, it is possible to provide a sensor and an inspection device that can improve characteristics.

[0206] The embodiments of the present invention have been described above with reference to examples. However, the present invention is not limited to these examples. For example, the specific configurations of the elements included in the sensor or inspection device, such as the magnetic layer, magnetic element, conductive member, control unit, and processing unit, are within the scope of the present invention as long as a person skilled in the art can implement the present invention in a similar manner and obtain similar effects by appropriately selecting them from known ranges.

[0207] Any combination of two or more elements of each example within the scope of technical feasibility is also included within the scope of the present invention as long as it encompasses the gist of the present invention.

[0208] All sensors and inspection devices that can be implemented by a person skilled in the art by appropriately modifying the design based on the sensor and inspection device described above as embodiments of the present invention also fall within the scope of the present invention, as long as they include the gist of the present invention.

[0209] Within the scope of the concept of the present invention, a person skilled in the art may conceive of various modifications and alterations, and it is understood that these modifications and alterations also fall within the scope of the present invention.

[0210] Although several embodiments of the present invention have been described, these embodiments are presented as examples and are not intended to limit the scope of the invention. These novel embodiments can be embodied in various other forms, and various omissions, substitutions, and modifications can be made without departing from the spirit of the invention. These embodiments and their modifications are included within the scope and spirit of the invention, and are also included in the scope of the invention and its equivalents as defined in the claims. [Explanation of symbols]

[0211] 10A to 10D...first to fourth elements, 10U...element portion, 10V...bridge circuit, 11 to 14...first to fourth magnetic elements, 11a to 14a...first to fourth magnetic layers, 11aM to 14aM...magnetization, 11b to 14b...first to fourth opposing magnetic layers, 11bM to 14bM...magnetization, 11e to 14e...first to fourth element portions, 11f to 14f...first to fourth other element portions, 11n to 14n...first to fourth non-magnetic layers, 21 to 24...first to fourth conductive members, 21e to 24e...first to fourth conductive portions, 21f to 24f...first to fourth other conductive portions, 28...magnetic field generating portion, 31 to 33...first to third resistors, 31e-33e...first to third resistance portions, 31f-33f...first to third other resistance portions, 41...first magnetic portion, 41A...first opposing magnetic portion, 41AM...magnetization, 41M...magnetization, 61-64...first to fourth conductive layers, 61e-64e...first to fourth conductive layer portions, 61f-64f...first to fourth other conductive layer portions, 70...control portion, 71-74...first to fourth circuits, 73o...output portion, 75...processing circuit, 76...differential amplifier, 81...insulating member, 110-116, 121-126, 131-136, 150, 150a...sensor, 301...sensor portion, 302...base, 303...input / output cord, 305...base, 500...diagnostic device, 502...control mechanism, 504...signal input / output section, 506...sensor driving section, 508...signal processing section, 510...signal analysis section, 512...data processing section, 516...imaging diagnosis section, 600...battery system, 610...battery, 680...inspection object, 710...inspection device, 770...processing section, CP1, CP2...first and second connection points, D1 to D3...first to third directions, DR1, DR2...range, Dx...cross direction, H1, H2...magnetic field, Ha...first magnetic field, Ha1...AC magnetic field component, Has...magnetic field strength, Hb...bias magnetic field, Hd1...DC magnetic field component, Hmin...minimum value, Hp1...amplitude, Hs1...first magnetic field value, Ht...magnetic field to be detected, Hts...normalized magnetic field to be detected, Hx, Hy...magnetic field, L41, L61...length, Lc1, Lc2, Le1, Le2...length, MR1...magnetic resistance, R1...first electrical resistance, Ve...voltage, i1, i2...first and second currents, ia1...AC component, id...detection current, id1...DC component, ip1...amplitude, tm...time

Claims

1. an element portion including a first element, the first element includes a first magnetic element, a first conductive member, and a first magnetic portion; the first magnetic element includes a first magnetic layer and a first opposing magnetic layer; a length of the first magnetic element along a second direction intersecting a first direction from the first magnetic layer to the first opposing magnetic layer is longer than a length of the first magnetic element along a third direction intersecting a plane including the first direction and the second direction; the first conductive member includes a first conductive portion and a first other conductive portion; a direction from the first other conductive portion to the first conductive portion is along the second direction; The sensor, wherein the direction from the first magnetic portion to the first magnetic element is along the second direction.

2. The sensor according to claim 1 , wherein a length of the first magnetic portion along the third direction is longer than the length of the first magnetic element along the third direction.

3. Further comprising a control unit including a first circuit, the first circuit is electrically connected to the first conductive portion and the first other conductive portion; the first circuit is capable of supplying a first current to the first conductive member; the first current includes an AC component; the first current minimum is of a first polarity; The sensor of claim 1 , wherein the first current has a maximum value at the first polarity.

4. an element portion including a first element, the first element includes a first magnetic element, a first conductive member, and a first conductive layer; the first magnetic element includes a first magnetic layer and a first opposing magnetic layer; a length of the first magnetic element along a second direction intersecting a first direction from the first magnetic layer to the first opposing magnetic layer is longer than a length of the first magnetic element along a third direction intersecting a plane including the first direction and the second direction; the first conductive member includes a first conductive portion and a first other conductive portion; a direction from the first other conductive portion to the first conductive portion is along the second direction; the first conductive layer overlaps the first magnetic element in the first direction; the first conductive layer includes a first conductive layer portion and a first other conductive layer portion; a direction from the first conductive layer portion to the first other conductive layer portion is along the third direction; a second current is capable of flowing between the first conductive layer portion and the first other conductive layer portion; a control unit including a first circuit; the first circuit is electrically connected to the first conductive portion and the first other conductive portion; the first circuit is capable of supplying a first current to the first conductive member; the first current includes an AC component; the first current minimum is of a first polarity; The first current maximum is of the first polarity.

5. a fourth circuit; The sensor of claim 4 , wherein the fourth circuit is capable of supplying the second current to the first conductive layer.

6. A sensor according to any one of claims 1 to 5; a processing unit for processing an output signal obtained from the sensor; An inspection device equipped with:

Images