Solid-state imaging device and its manufacturing method

Abstract

The present invention provides a solid-state imaging element that can easily be reduced in size, and a method for producing the same. Provided is a solid-state imaging element (10) wherein: a lens layer (14) disposed so as to cover color filters (13A-13C) has microlens parts (14c) that protrude and correspond to respective photoelectric conversion elements (12), and has a flat part (14a) that is positioned between the color filters (13A-13C) and the microlens parts (14c); the microlens parts (14c) and the flat part (14a) are formed from the same material; spaces (C1, C2) are respectively formed between microlens parts (14c) that are adjacent in X and Y directions and adjacent in U directions intersecting the X and Y directions at an angle of 45°, whereas the flat part (14a) is formed continuously without any spaces in the X, Y, and U directions; and the height (Hm) of the microlens parts (14c) is greater than the thickness (Hf) of the flat part (14a).

Description

[Technical Field]

[0001] The present invention relates to a solid-state imaging device such as a CCD or CMOS that uses a photoelectric conversion element such as a photodiode, and to a method for manufacturing the same. [Background technology]

[0002] As a conventional solid-state imaging device such as a CCD (charge coupled device) or a CMOS (complementary metal oxide semiconductor) that uses a photoelectric conversion element such as a photodiode, for example, one shown in FIG. 5 is known (see, for example, Patent Document 1 below).

[0003] In this solid-state imaging element 110, color filters 113A to 113C of each color are provided on a semiconductor substrate 111 so as to correspond to a plurality of photoelectric conversion elements 112 inside the semiconductor substrate 111. A lens layer 114 is also provided so as to cover the color filters 113A to 113C. Furthermore, column portions 114b each having a substantially rectangular pillar shape are formed on a flat portion 114a of the lens layer 114 so as to correspond to each of the photoelectric conversion elements 112 and each of the color filters 113A to 113C. Furthermore, microlens portions 114c each having a substantially elliptical shape are formed on each of the column portions 114b.

[0004] In such a solid-state imaging element 110, light incident from the microlens portion 114c of the lens layer 114 passes through the column portion 114b and the flat portion 114a, and reaches the photoelectric conversion element 112 via the color filters 113A to 113C. [Prior art documents] [Patent documents]

[0005] [Patent Document 1] Japanese Patent Application Laid-Open No. 2008-270679 Summary of the Invention [Problem to be solved by the invention]

[0006] In the conventional solid-state imaging device 110 described above, the microlens portion 114c of the lens layer 114 has a substantially elliptical shape, which results in a relatively large radius of curvature, resulting in a long focal length. To address this, the solid-state imaging device 110 is designed to ensure a distance to the photoelectric conversion element 112 via the column portion 114b. As a result, the solid-state imaging device 110 is relatively large (thick), making it difficult to respond to the recent strong demand for further miniaturization (thinning).

[0007] SUMMARY OF THE INVENTION In view of the above, an object of the present invention is to provide a solid-state imaging device that can be easily downsized and a method for manufacturing the same. [Means for solving the problem]

[0008] In order to solve the above-mentioned problem, a solid-state imaging device according to one embodiment of the present invention comprises a semiconductor substrate on which photoelectric conversion elements are formed that are arranged two-dimensionally in a first direction and a second direction perpendicular to the first direction; color filters of each color that are arranged on the semiconductor substrate to correspond to each of the photoelectric conversion elements; and a lens layer that is arranged on the color filters to cover the color filters, wherein the lens layer has a plurality of microlens portions that protrude to correspond to each of the photoelectric conversion elements, and transmissive portions that are located between the color filters and the microlens portions and transmit light from the microlens portions toward the photoelectric conversion elements, and the microlens portions and the transmissive portions of the lens layer are formed from the same material, and the transmissive portions of the lens layer are formed to be connected without gaps in the first direction, the second direction, and a third direction that intersects the first direction and the second direction at 45°, while gaps are formed between adjacent microlens portions in the first direction, the second direction, and the third direction, and the height of the microlens portions of the lens layer is greater than the height of the transmissive portions.

[0009] Furthermore, a manufacturing method of a solid-state imaging element according to one aspect of the present invention is characterized in that, in the manufacturing method of the solid-state imaging element described above, the method includes the steps of: providing the color filters on a semiconductor substrate so as to correspond to each of the photoelectric conversion elements of the semiconductor substrate; providing a transparent layer on the color filters so as to cover the color filters; providing a master mold having a shape corresponding to the shape of the microlens portion on the transparent layer at a position corresponding to each of the microlens portions; and using the master mold as a mask, etching is performed to transfer the shape of the master mold to the transparent layer, thereby forming the microlens portions and the transmissive portions in the transparent layer so as to provide the lens layer, thereby forming the gaps between adjacent microlens portions in the first direction, the second direction, and the third direction, while connecting the transmissive portions without any gaps in the transmissive portions in the first direction, the second direction, and the third direction, and making the height of the microlens portions greater than the height of the transmissive portions. [Effects of the Invention]

[0010] According to a solid-state imaging device and a method for manufacturing the same according to one aspect of the present invention, miniaturization can be easily achieved, and further miniaturization (thinning) that has been strongly demanded in recent years can be accommodated. [Brief explanation of the drawings]

[0011] [Figure 1] 1 is a schematic configuration diagram of a main part of a main embodiment of a solid-state imaging device according to the present invention; [Figure 2] FIG. 2 is a plan view seen from the direction of the arrow II in FIG. [Figure 3] 1A to 1C are explanatory diagrams illustrating the steps of a main embodiment of a method for manufacturing a solid-state imaging device according to the present invention. [Figure 4] FIG. 10 is an explanatory diagram of the height and width of an arc. [Figure 5] FIG. 1 is a schematic diagram illustrating the configuration of a main part of an example of a conventional solid-state imaging device. DETAILED DESCRIPTION OF THE INVENTION

[0012] DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS A solid-state imaging device and a manufacturing method thereof according to the present invention will be described with reference to the accompanying drawings. However, the present invention is not limited to the following embodiments described with reference to the drawings.

[0013] <Main embodiment> Main embodiments of a solid-state imaging device and a manufacturing method thereof according to the present invention will be described below with reference to FIGS. 1 and 2, a plurality of photoelectric conversion elements 12 such as photodiodes are formed inside a semiconductor substrate 11 and are arranged two-dimensionally with respect to a first direction, that is, an X direction, and a second direction, that is, a Y direction, which is orthogonal to the X direction in a plan view seen from the direction of arrow II in Fig. 1. That is, the semiconductor substrate 11 has a plurality of photoelectric conversion elements 12 arranged two-dimensionally in correspondence with pixels. Each photoelectric conversion element 12 has the function of converting light into an electrical signal.

[0014] The semiconductor substrate 11 on which the photoelectric conversion element 12 is provided usually has a protective film formed on the outermost surface for the purpose of protecting and planarizing the surface (light incident surface). The semiconductor substrate 11 is made of a material that transmits visible light and can withstand temperatures of at least about 300° C. Examples of such materials include Si, oxides such as SiO2, nitrides such as SiN, and mixtures thereof, as well as materials containing Si. The surface of the photoelectric conversion element 12 is located within a range of, for example, 0.5 μm to 1.0 μm from the surface of the semiconductor substrate 11 .

[0015] A plurality of color filters 13A to 13C of different colors are arranged on the semiconductor substrate 11 so as to correspond to the respective photoelectric conversion elements 12. The color filters 13A to 13C are arranged in a predetermined pattern and correspond to the respective colors into which incident light is separated. The color filters 13A to 13C are arranged in a Bayer array, which is a regular pattern that is set in advance so as to correspond to each of the plurality of photoelectric conversion elements 12 according to pixel positions. Note that the color filters 13A to 13C are not necessarily limited to a Bayer array, and other arrays are also possible.

[0016] The color filters 13A to 13C contain pigments (colorants) of predetermined colors, as well as heat-curable and photo-curable components. As the colorants, for example, the color filter 13A can contain a green pigment (G), the color filter 13B can contain a blue pigment (B), and the color filter 13C can contain a red pigment (R). The color filters 13A to 13C are not limited to the three colors of RGB, and a combination of cyan, magenta, and yellow is also possible. The color filters 13A to 13C may also include a near-infrared cut or pass filter. The color filters 13A to 13C may also have a transparent layer with an adjusted refractive index arranged in part of their arrangement.

[0017] The color filters 13A to 13C have a width in the range of, for example, 3.9 μm to 4.7 μm, and a thickness in the range of, for example, 0.5 μm to 1.0 μm. A lens layer is disposed on the color filters 13A to 13C so as to cover the color filters 13A to 13C. That is, the color filters 13A to 13C are provided between the semiconductor substrate 11 and the lens layer . The lens layer 14 has a plurality of hemispherical microlens portions 14c that protrude to correspond to the respective photoelectric conversion elements 12. The lens layer 14 also has flat portions 14a that are transmissive portions that are located between the color filters 13A to 13C and the microlens portions 14c and transmit light from the microlens portions 14c toward the photoelectric conversion elements 12.

[0018] As shown in FIG. 1, the lens layer 14 has a size such that the height Hm of the microlens portion 14c is larger than the thickness (height) Hf of the flat portion 14a (Hm > Hf). Here, the thickness Hf is the length of the perpendicular line connecting the boundary surface between the flat portion 14a and the microlens portion 14c and the boundary surface between the flat portion 14a and the color filters 13A to 13C. The height Hm is the length of the perpendicular line connecting the apex position of the microlens portion 14c and the boundary surface between the microlens portion 14c and the flat portion 14a. The "boundary surface between the flat portion 14a and the microlens portion 14c" described above means a virtual boundary surface provided between the flat portion 14a and the microlens portion 14c when the flat portion 14a and the microlens portion 14c are formed of the same material.

[0019] The height Hm is preferably in the range of 1.4 μm or more and 1.5 μm or less. This is because when the height Hm is within the above-mentioned value range, the light reception sensitivity of the incident light to the photoelectric conversion element 12 can be further enhanced. Although it is preferable that the height Hm and the thickness Hf of each lens layer 14 are uniform respectively, variations may occur during manufacturing. Therefore, when obtaining the height Hm and the thickness Hf of each lens layer 14, it is preferable to measure an arbitrary plurality of locations (for example, 10 locations) and calculate the average value.

[0020] As shown in FIG. 2, in the same plane as the X direction and the Y direction, a direction intersecting the X direction and the Y direction at 45° is defined as the U direction, which is the third direction. In the X direction, Y direction, and U direction, gaps C1 and C2 are formed between adjacent microlens portions 14c of the lens layer 14 respectively. The gap C1 between adjacent microlens portions 14c in the X direction and the Y direction is smaller in size (length) than the gap C2 between adjacent microlens portions 14c in the U direction (C1 < C2). Here, the size (length) of the gaps C1 and C2 is the length of the shortest distance connecting between adjacent microlens portions 14c respectively.

[0021] The gap C1 preferably has a size of 0.1 μm or more and 0.5 μm or less. The gap C2 preferably has a size of 1.2 μm or more and 1.8 μm or less. Further, the difference (C2 - C1) between the gap C1 and the gap C2 is preferably 1.5 μm or less, and more preferably 1.2 μm or more and 1.4 μm or less. This is because when the gaps C1 and C2 are the above-described values, the light reception sensitivity of the incident light with respect to the photoelectric conversion element 12 can be further enhanced. And the lens layer 14 has a size (dimension) such that the widths W1 in the X direction and the Y direction of the microlens portion 14c are smaller than the width W2 in the U direction (W1 < W2). Here, the widths W1 and W2 are the lengths in each direction at the boundary surface between the microlens portion 14c and the flat portion 14a. If the width W1 is smaller than the width W2, the amount of incident light received by the photoelectric conversion element 12 can be further increased.

[0022] The width W1 preferably has a size of 3.8 μm or more and 4.2 μm or less. The width W2 preferably has a size of 4.2 μm or more and 4.8 μm or less. Further, the difference (W2 - W1) between the width W1 and the width W2 is preferably 1 μm or less, and more preferably 0.4 μm or more and 0.6 μm or less. This is because when the widths W1 and W2 are the above-described values, the amount of incident light received by the photoelectric conversion element 12 can be further increased.

[0023] Furthermore, in the lens layer 14, at least one of the arc lengths R1 of the outer peripheral circle in the cross-sectional shape passing through the X direction and along the film thickness direction of the microlens portion 14c and the arc length R1 of the outer peripheral circle in the cross-sectional shape passing through the Y direction and along the film thickness direction of the microlens portion 14c has a size (dimension) smaller than the arc length R2 of the outer peripheral circle in the cross-sectional shape passing through the U direction and along the film thickness direction of the microlens portion 14c (R1 < R2). That is, in the lens layer 14, at least one of the arc length R1 of the outer circumferential circle in the cross section along the X direction and the arc length R1 of the outer circumferential circle in the cross section along the Y direction is smaller than the arc length R2 of the outer circumferential circle in the cross section along the U direction (R1 <R2)。

[0024] The arc length R1 is preferably 2.0 μm or more and 2.2 μm or less. The arc length R2 is preferably 2.3 μm or more and 2.6 μm or less. The difference between the arc length R1 and the arc length R2 (R2-R1) is preferably 1 μm or less, and more preferably 0.2 μm or more and 0.5 μm or less. This is because when the arc lengths R1 and R2 are the above-mentioned values, the incidence of flare light on the photoelectric conversion element 12 can be further suppressed. As shown in FIG. 4, the length (arc length) R of the arc (peripheral circle) can be calculated based on the following formula (1), where h is the height of the arc and W is the width of the arc. R={(W / 2) 2 +h 2} / 2h (1)

[0025] A method for manufacturing such a solid-state imaging device 10 according to this embodiment will be described with reference to FIG. First, for a semiconductor substrate 11 having photoelectric conversion elements 12 (FIG. 3A), color filters 13A to 13C are respectively disposed on the semiconductor substrate 11 by known means so as to correspond to each photoelectric conversion element 12 (color filter disposing step: FIG. 3B). Next, a transparent layer 4 is provided on the color filters 13A to 13C so as to cover the color filters 13A to 13C (transparent layer providing step: FIG. 3C). The transparent layer 4 can be provided by a method of applying a transparent resin such as an acrylic resin and curing it with heat or light, or by a method of depositing a transparent compound such as an oxide or nitride by vapor deposition, sputtering, CVD, or the like.

[0026] Next, a matrix 5 having a hemispherical shape corresponding to the shape of the microlens portion 14c is provided on the surface of the transparent layer 4 opposite to the color filters 13A to 13C by a thermal flow method so as to be at a position corresponding to each of the microlens portions 14c (matrix providing step: FIG. 3D). That is, the matrix 5 is provided on the transparent layer 4 so as to be at a position corresponding to each of the color filters 13A to 13C and each of the photoelectric conversion elements 12. Then, using the matrix 5 as a mask, dry etching is performed while adjusting the etching conditions so as to transfer the shape of the matrix 5 to the transparent layer 4. This provides the lens layer 14 in which the above-described flat portion 14a and microlens portion 14c are formed on the transparent layer 4 (lens layer forming step: FIG. 3E).

[0027] That is, the transparent layer 4 is formed so that there are gaps C1 and C2 between adjacent microlens portions 14c in the X, Y, and U directions, respectively. On the other hand, the transparent layer 4 is formed so that the flat portions 14a are connected without any gaps between them in the X, Y, and U directions. Also, the transparent layer 4 is formed so that the height Hm of the microlens portions 14c is greater than the thickness Hf of the flat portions 14a. In this manner, the solid-state imaging element 10 can be obtained. That is, in this embodiment, the transparent layer 4 is etched as follows to form the lens layer 14 in which the microlens portion 14c and the flat portion 14a are made of the same material.

[0028] (1) Gaps C1 and C2 are formed between adjacent microlens portions 14c in the X, Y, and U directions of the lens layer 14. (2) On the other hand, the flat portions 14a of the lens layer 14 are formed so as to be connected without any gaps in the X, Y, and U directions. (3) The transmissive portions between the color filters 13A to 13C and the microlens portions 14c of the lens layer 14 are formed so as to be only flat portions 14a that are lower in height than the microlens portions 14c.

[0029] 5, the microlens portion 114c of the lens layer 114 has a small height hm but a long focal length. For this reason, the height of the transmitting portion (hf+hc), which is the sum of the height hf of the flat portion 114a and the height hc of the column portion 114b, had to be increased (hf+hc>hm), which resulted in a large thickness of the lens layer 114 (hf+hc+hm).

[0030] In contrast, in this embodiment, by forming gaps C1 and C2 between the microlens portions 14c of the lens layer 14, it is possible to shorten the arc lengths R1 and R2 of the microlens portions 14c and reduce the difference (R2-R1) between the arc length R1 in the X and Y directions and the arc length R2 in the U direction. Therefore, in this embodiment, the focal length of the microlens portion 14c can be shortened, and the transparent portion of the lens layer 14 can be formed only by the flat portion 14a having a thickness Hf smaller than the height Hm of the microlens portion 14c, thereby making it possible to reduce the thickness (Hm+Hf) of the lens layer 14. Therefore, the solid-state imaging device 10 according to this embodiment and the manufacturing method thereof can be easily miniaturized, and can meet the recent strong demand for further miniaturization (thinning).

[0031] Furthermore, since the microlens portions 14c of the lens layer 14 have a short focal length, the focal point of the incident light can be narrowed, and the amount of light reaching the photoelectric conversion elements 12 can be increased. Furthermore, since the arc lengths R1 and R2 of the microlens portions 14c of the lens layer 14 can be reduced, the incidence of flare light on the photoelectric conversion elements 12 can be suppressed.

[0032] Furthermore, because the microlens portions 14c and the flat portion 14a of the lens layer 14 are made of the same material, no interface or refractive index difference occurs between the microlens portions 14c and the flat portion 14a. This allows incident light to be reliably guided to the photoelectric conversion elements 12, significantly reducing optical loss. Furthermore, the lens layer 14 can be shaped by etching. This allows the size of the gaps C1 and C2 between adjacent microlens portions 14c to be more precisely controlled than in a lens layer in which microlens portions are formed on a flat portion using a thermal flow method due to surface tension. This makes it easy to maximize the area of ​​the microlens portions 14c on the flat portion 14a and maximize the amount of light reaching the photoelectric conversion elements 12.

[0033] In other words, the solid-state imaging device 10 according to this embodiment, which has the above-described technical features, can eliminate the trade-off between "sensitivity characteristics" and "incidence of flare light" that has been an issue with solid-state imaging devices according to conventional techniques. This point will be briefly explained below. Among the lenses provided in conventional solid-state imaging devices, so-called flow lenses generally occupy a small area per pixel, but have a high curvature of the lens surface. Therefore, flow lenses generally have low sensitivity but are capable of sufficiently suppressing the incidence of flare light.

[0034] Furthermore, among lenses provided in solid-state imaging devices according to conventional techniques, so-called etched lenses generally occupy a large area per pixel, but have a low curvature of the lens surface. As a result, etched lenses generally have high sensitivity, but the incidence of flare light cannot be ignored. As described above, in the solid-state imaging devices according to the prior art, there is a trade-off between "sensitivity characteristics" and "incidence of flare light." In contrast, the solid-state imaging device 10 according to the present invention can achieve both improved sensitivity characteristics and suppression of flare light.

[0035] Other Embodiments In the above-described embodiment, a lower planarizing layer for protection and planarization can be provided on the surface of the semiconductor substrate 11. This lower planarizing layer reduces irregularities on the upper surface of the semiconductor substrate 11 caused by the fabrication of the photoelectric conversion elements 12 and improves the adhesion of the materials of the color filters 13A to 13C. The lower planarizing layer is formed of a resin containing one or more of the following resins: acrylic resin, epoxy resin, polyimide resin, phenol novolac resin, polyester resin, urethane resin, melamine resin, urea resin, styrene resin, etc. The lower planarizing layer is not limited to these resins, and any material can be used as long as it transmits visible light with a wavelength of 400 nm to 700 nm and does not interfere with the pattern formation or adhesion of the color filters 13A to 13C.

[0036] The lower planarization layer is preferably formed of a resin that does not affect the spectral characteristics of the color filters 13A to 13C. For example, the lower planarization layer is preferably formed so as to have a transmittance of 90% or more for visible light with a wavelength of 400 nm to 700 nm. From the viewpoint of preventing color mixing, the thinner the lower planarization layer, the better. The thickness of the lower planarization layer is, for example, in the range of 0.5 μm to 1.0 μm.

[0037] Furthermore, in the above-described embodiment, an upper planarization layer for planarization can be provided on the surfaces of the color filters 13A to 13C. This upper planarization layer is formed of a resin containing one or more of resins such as acrylic resin, epoxy resin, polyimide resin, phenol novolac resin, polyester resin, urethane resin, melamine resin, urea resin, and styrene resin. The upper planarization layer can also be integrated with the lens layer 14. From the viewpoint of preventing color mixing, the thinner the upper planarization layer, the more preferable it is. The thickness of the upper planarization layer is, for example, in the range of 0.5 μm to 1.0 μm.

[0038] In the above-described embodiment, as shown in Fig. 2, the case where C1 provided along the X direction and C1 provided along the Y direction have the same value has been described, but the present invention is not limited to this. C1 provided along the X direction and C1 provided along the Y direction may have different values. Even when C1 provided along the X direction and C1 provided along the Y direction have different values, the same effect as that of the present invention described above can be obtained.

[0039] Furthermore, in the above-described embodiment, the arc length R1 of the outer periphery circle in the cross section taken along the X direction and the arc length R1 of the outer periphery circle in the cross section taken along the Y direction are the same value, but the present invention is not limited to this. The arc length R1 of the outer periphery circle in the cross section taken along the X direction and the arc length R1 of the outer periphery circle in the cross section taken along the Y direction may be different values. Even when the arc length R1 of the outer periphery circle in the cross section taken along the X direction and the arc length R1 of the outer periphery circle in the cross section taken along the Y direction are different values, the same effects as those of the present invention described above can be obtained. [Industrial Applicability]

[0040] The solid-state imaging device and the manufacturing method thereof according to the present invention can be used in various optical devices such as digital cameras, and can be used industrially in an extremely beneficial manner. [Explanation of symbols]

[0041] 10 Solid-state imaging device 11 Semiconductor substrate 12 Photoelectric conversion element 13A~13C Color Filters 14 Lens Layer 14a Flat area 14c Micro lens section

Claims

1. a semiconductor substrate on which a plurality of photoelectric conversion elements are formed, the photoelectric conversion elements being two-dimensionally arranged with respect to a first direction and a second direction orthogonal to the first direction; a plurality of color filters of different colors arranged on the semiconductor substrate so as to correspond to the respective photoelectric conversion elements; a lens layer disposed on the color filter so as to cover the color filter; Equipped with The lens layer is a plurality of microlens portions projecting in correspondence with the photoelectric conversion elements; a transmission section positioned between the color filter and the microlens section, for transmitting light from the microlens section toward the photoelectric conversion element; and The microlens portion and the transmissive portion of the lens layer are formed from the same material, Gaps are formed between the adjacent microlens portions in the first direction, the second direction, and a third direction intersecting the first direction and the second direction at 45°, the transmissive portions of the lens layer are formed to be continuous without any gaps in the first direction, the second direction, and the third direction, the height of the microlens portion of the lens layer is greater than the height of the transmissive portion, The gaps formed between the microlens portions are flat in cross section. A solid-state imaging device characterized by:

2. 2. The solid-state imaging device according to claim 1, the size of the gap between the microlens portions adjacent to each other in the first direction and the second direction is 0.1 μm or more and 0.5 μm or less; The size of the gap between the microlens portions adjacent to each other in the third direction is 1.0 μm or more and 2.0 μm or less. A solid-state imaging device characterized by:

3. 3. The solid-state imaging device according to claim 1, the microlens portion of the lens layer has an arc length of an outer circumferential circle in a cross section passing through the first direction and along a film thickness direction of the microlens portion, and an arc length of an outer circumferential circle in a cross section passing through the second direction and along a film thickness direction of the microlens portion, both of which are 2.0 μm or more and 2.2 μm or less; The length of an arc of an outer circumferential circle of the microlens portion of the lens layer in a cross section passing through the third direction and taken along a film thickness direction of the microlens portion is 2.3 μm or more and 2.6 μm or less. A solid-state imaging device characterized by:

4. a semiconductor substrate on which a plurality of photoelectric conversion elements are formed, the photoelectric conversion elements being two-dimensionally arranged with respect to a first direction and a second direction orthogonal to the first direction; a plurality of color filters of different colors arranged on the semiconductor substrate so as to correspond to the respective photoelectric conversion elements; a lens layer disposed on the color filter so as to cover the color filter; Equipped with The lens layer is a plurality of microlens portions projecting in correspondence with the photoelectric conversion elements; a transmission section positioned between the color filter and the microlens section, for transmitting light from the microlens section toward the photoelectric conversion element; and The microlens portion and the transmissive portion of the lens layer are formed from the same material, Gaps are formed between the adjacent microlens portions in the first direction, the second direction, and a third direction intersecting the first direction and the second direction at 45°, the transmissive portions of the lens layer are formed to be continuous without any gaps in the first direction, the second direction, and the third direction, the height of the microlens portion of the lens layer is greater than the height of the transmissive portion, the size of the gap between the microlens portions adjacent to each other in the first direction and the second direction is 0.1 μm or more and 0.5 μm or less; The size of the gap between the microlens portions adjacent to each other in the third direction is 1.0 μm or more and 2.0 μm or less. A solid-state imaging device characterized by:

5. a semiconductor substrate on which a plurality of photoelectric conversion elements are formed, the photoelectric conversion elements being two-dimensionally arranged with respect to a first direction and a second direction orthogonal to the first direction; a plurality of color filters of different colors arranged on the semiconductor substrate so as to correspond to the respective photoelectric conversion elements; a lens layer disposed on the color filter so as to cover the color filter; Equipped with The lens layer is a plurality of microlens portions projecting in correspondence with the photoelectric conversion elements; a transmission section positioned between the color filter and the microlens section, for transmitting light from the microlens section toward the photoelectric conversion element; and The microlens portion and the transmissive portion of the lens layer are formed from the same material, Gaps are formed between the adjacent microlens portions in the first direction, the second direction, and a third direction intersecting the first direction and the second direction at 45°, the transmissive portions of the lens layer are formed to be continuous without any gaps in the first direction, the second direction, and the third direction, the height of the microlens portion of the lens layer is greater than the height of the transmissive portion, the microlens portion of the lens layer has an arc length of an outer circumferential circle in a cross section passing through the first direction and along a film thickness direction of the microlens portion, and an arc length of an outer circumferential circle in a cross section passing through the second direction and along a film thickness direction of the microlens portion, both of which are 2.0 μm or more and 2.2 μm or less; The length of an arc of an outer circumferential circle of the microlens portion of the lens layer in a cross section passing through the third direction and taken along a film thickness direction of the microlens portion is 2.3 μm or more and 2.6 μm or less. A solid-state imaging device characterized by:

6. 6. The method for manufacturing a solid-state imaging device according to claim 1, providing the color filters on the semiconductor substrate so as to correspond to the photoelectric conversion elements of the semiconductor substrate; providing a transparent layer on the color filter so as to cover the color filter; providing a matrix having a shape corresponding to the shape of each of the microlens portions on the transparent layer at a position corresponding to each of the microlens portions; a step of forming the microlens portions and the transmissive portions in the transparent layer so that, by using the matrix as a mask, etching is performed to transfer the shape of the matrix to the transparent layer, thereby forming the gaps between the microlens portions adjacent to each other in the first direction, the second direction, and the third direction, while connecting the transmissive portions without forming gaps in the transmissive portions in the first direction, the second direction, and the third direction, and making the height of the microlens portions greater than the height of the transmissive portions, thereby providing the lens layer; A method for manufacturing a solid-state imaging device, comprising:

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