Illumination module and lighting device including the same

Abstract

An illumination device disclosed in an embodiment of the invention may include a substrate including a recess, a light source on the substrate, a resin layer on the substrate, and a wavelength conversion layer on the resin layer. A portion of the resin layer is disposed within the recess of the substrate. A portion of the wavelength conversion layer is disposed above the recess of the substrate. An outermost surface of the portion of the resin layer disposed within the recess of the substrate may be located outside an inner surface of the wavelength conversion layer.

Description

[Technical Field]

[0001] Embodiments of the invention relate to lighting modules and lighting devices having a light source and a resin layer. Embodiments of the invention relate to lighting modules and lighting devices that provide area light through a resin with a colored surface. Embodiments of the invention relate to vehicle lamps having lighting modules or lighting devices. [Background technology]

[0002] Lighting applications include not only vehicle lighting but also interior and exterior lighting, and backlighting for displays and signs. Light sources, such as light-emitting diodes (LEDs), have advantages over light sources such as fluorescent lamps and incandescent lamps, including low power consumption, a semi-permanent lifespan, fast response speed, safety, and environmental friendliness. These LEDs are used in various display devices and various lighting devices, such as interior and exterior lights. Recently, lamps using light-emitting diodes have been proposed as vehicle light sources. Compared to incandescent lamps, light-emitting diodes have the advantage of lower power consumption. Furthermore, light-emitting diodes' small size allows for greater freedom in lamp design, and their semi-permanent lifespan makes them economical. Summary of the Invention [Problem to be solved by the invention]

[0003] An embodiment of the present invention may provide a lighting module and a lighting device that provide area light through a colored surface. An embodiment of the present invention may provide a lighting module and a lighting device that has a resin layer covering a light source and a wavelength conversion layer covering the resin layer. An embodiment of the present invention may provide a lighting module and a lighting device in which a recess is formed in a substrate on which a light source is disposed, and at least one or all of a portion of the resin layer and a portion of the wavelength conversion layer are disposed in the recess. An embodiment of the present invention may provide a lighting module and a lighting device in which a recess is formed in a substrate on which a light source is disposed, and at least one or more of a portion of the resin layer, a portion of the phosphor layer, and a portion of the ink layer are disposed in the recess. An embodiment of the present invention may provide a lighting module and a lighting device in which a recess is formed in a substrate on which a light source is disposed, and the recess vertically overlaps a wavelength conversion layer having at least one of a phosphor layer and an ink layer. An embodiment of the present invention may provide a lighting module and a lighting device in which a recess is formed in a substrate on which a light source is disposed, and the outermost surface of the portion of the resin layer disposed in the recess is positioned outside the innermost or outermost surface of the wavelength conversion layer. In accordance with an embodiment of the present invention, a lighting module and a lighting device may be provided, in which the recess of the substrate is a hole or groove penetrating from the top surface to the bottom surface of the substrate, and the recess is filled with a material of a different resin layer laminated on the substrate. In accordance with an embodiment of the present invention, a lighting module that irradiates surface light and a lighting device having the same may be provided, and the lighting module may be applied to a light unit, a liquid crystal display device, or a vehicle lamp. [Means for solving the problem]

[0004] An illumination device according to an embodiment of the invention includes a substrate including a recess, a light source disposed on the substrate, a resin layer disposed on the substrate, and a wavelength conversion layer disposed on the resin layer, wherein a portion of the resin layer is disposed within the recess of the substrate, a portion of the wavelength conversion layer is disposed above the recess of the substrate, and an outermost surface of the portion of the resin layer disposed within the recess of the substrate may be located outside an inner surface of the wavelength conversion layer.

[0005] According to an embodiment of the invention, the recess in the substrate may vertically overlap with side surfaces of the wavelength conversion layer and the resin layer. A lighting device according to an embodiment of the invention includes a substrate including a recess, a light source disposed on the substrate, a resin layer disposed on the substrate, and a wavelength conversion layer disposed on the resin layer, wherein the light source includes a plurality of light-emitting elements arranged in N rows and M columns, and the wavelength conversion layer includes an upper portion disposed on an upper surface of the resin layer and a side portion connected to the upper portion and disposed on a side surface of the resin layer, and the recess in the substrate may vertically overlap with a portion of the side portion of the wavelength conversion layer. According to an embodiment of the invention, a portion of the recess in the substrate may be located outside an outer surface of the resin layer. Another portion of the recess in the substrate may be located inside an outer surface of the resin layer.

[0006] According to an embodiment of the invention, the width of the recess in the substrate may be greater than the thickness of the wavelength conversion layer. The depth of the recess in the substrate may be smaller than or equal to the thickness of the substrate. A lower end of the wavelength conversion layer overlapping the recess in the substrate may be disposed within the recess in the substrate or may be flush with the upper surface of the substrate. According to an embodiment of the invention, the maximum height of a region of the wavelength conversion layer overlapping the recess in the substrate may be greater than or equal to the height of the wavelength conversion layer disposed on the substrate. According to an embodiment of the invention, the recess may be a groove or a hole. The light emitting element may include an LED chip and a resin member disposed on the LED chip. According to an embodiment of the invention, the wavelength conversion layer may include a phosphor layer and an ink layer disposed on the phosphor layer. The wavelength conversion layer may be formed by mixing a colored phosphor and a colored ink. According to an embodiment of the invention, a pitch between two adjacent light emitting elements among the plurality of light emitting elements may be 5 mm or more.

[0007] According to an embodiment of the present invention, there is provided a lighting device including a substrate, a light source disposed on the substrate, a resin layer disposed on the substrate, and a wavelength conversion layer disposed on the resin layer, the wavelength conversion layer including a first side surface corresponding to a first side surface of the resin layer, the first side surface of the wavelength conversion layer including a first region that overlaps with a portion of the resin layer in a direction perpendicular to the substrate. According to an embodiment of the present invention, there is provided a lighting device including: a substrate; a light source disposed on the substrate; a resin layer disposed on the substrate; and a wavelength conversion layer disposed on the resin layer, the wavelength conversion layer including a first side surface corresponding to a first side surface of the resin layer, the first side surface of the wavelength conversion layer including a first region that overlaps with a portion of the resin layer in a direction perpendicular to the substrate. According to an embodiment of the present invention, there is provided a lighting device including: a substrate;

[0008] The resin layer may be disposed between the first region and the substrate, and the wavelength conversion layer may include a hole, and the first region may be located above the hole. [Effects of the Invention]

[0009] According to an embodiment of the present invention, the uniformity of surface light can be improved using a lighting module or device. According to an embodiment of the present invention, in a lighting module or device, light from a light source can be diffused, and the diffused light can be wavelength-converted and emitted through a colored surface. According to an embodiment of the present invention, by providing a colored wavelength conversion layer in a lighting module or device, hot spots can be suppressed and a colored image can be provided on the surface when the light is not lit. According to an embodiment of the present invention, a flexible lighting module can be provided by stacking multiple thin resin layers on a substrate. According to an embodiment of the present invention, light leakage can be blocked through the sides of the resin layer stacked on the upper part of the substrate. This improves the optical reliability of the lighting module or device. According to an embodiment of the present invention, the light efficiency and light distribution characteristics of surface lighting can be improved and the chromaticity difference between the appearance image and the emitted image can be reduced. The lighting device according to an embodiment of the present invention can be applied to a vehicle lamp, a backlight unit, various display devices, a surface light source lighting device, or a vehicle lamp. [Brief explanation of the drawings]

[0010] [Figure 1]1 is an example of a plan view showing a lighting device according to an embodiment of the invention; [Figure 2] 2 is a cross-sectional view of the lighting device of FIG. 1 taken along the line AA. [Figure 3] FIG. 3 is a partial enlarged view of a recess in the substrate of FIG. 2. [Figure 4] 3 is a first modified example of the lighting device of FIG. [Figure 5] 3 is a second modified example of the lighting device of FIG. [Figure 6] 3 is a third modified example of the lighting device of FIG. [Figure 7] 10 is a fourth modified example of the lighting device of FIG. [Figure 8] 10 is a fifth modification of the lighting device of FIG. [Figure 9] 10 is a sixth modification of the lighting device of FIG. [Figure 10] FIG. 10 is a side cross-sectional view showing another example of a lighting device according to an embodiment of the invention. [Figure 11] 3 is a diagram showing a manufacturing process of the lighting device of FIG. 2. [Figure 12] 3 is a diagram showing a manufacturing process of the lighting device of FIG. 2. [Figure 13] 1. This is a modified example of the recess in the substrate in the lighting device of FIG. [Figure 14] 1. This is a modified example of the recess in the substrate in the lighting device of FIG. [Figure 15] 1 is a plan view of a vehicle to which a lamp having an illumination device according to an embodiment of the invention is applied; [Figure 16] 16 is a diagram showing a detailed configuration of a tail light of the vehicle lamp of FIG. 15. DETAILED DESCRIPTION OF THE INVENTION

[0011] Preferred embodiments of the present invention will now be described in detail with reference to the accompanying drawings. However, the technical concept of the present invention is not limited to the described embodiments and may be embodied in various different forms. One or more of the components of the embodiments may be selectively combined or substituted within the scope of the technical concept of the present invention. Furthermore, terms (including technical and scientific terms) used in the embodiments of the present invention shall be interpreted as generally understood by those skilled in the art to which the present invention pertains, unless expressly specified otherwise. Commonly used terms, such as dictionary-defined terms, shall be interpreted in light of the context of the relevant technology. Furthermore, the terms used in the embodiments of the present invention are intended to describe the embodiments and are not intended to limit the present invention. In this specification, the singular form "a," "an," or "an" may also include the plural form unless otherwise specified. For example, "A and at least one (or more) of B and C" refers to any combination of A, B, and C that can be combined. Furthermore, terms such as "first," "second," "A," "B," "(a)," and "(b)" may be used to describe components of the embodiments of the present invention. Such terms are used to distinguish a component from other components and do not limit the nature or order of the components. When a component is described as being "coupled," "coupled," or "connected" to another component, this includes both cases where the component is directly coupled or connected to the other component and cases where another component is "coupled," "coupled," or "connected" between the two components. When a component is described as being formed or located "above or below" another component, "above or below" does not only include cases where the two components are in direct contact with each other, but also cases where one or more other components are formed or located between the two components. Furthermore, when the term "above or below" is used, it can mean not only an upper direction but also a lower direction relative to one component.

[0012] The lighting device according to the present invention can be applied to various lamp devices requiring illumination, such as vehicle lamps, home lighting devices, and industrial lighting devices. For example, when applied to vehicle lamps, the lighting device can be used for headlamps, width lights, turn signals, side mirror lights, fog lights, tail lights, backup lamps, brake lights, daytime running lights, vehicle interior lighting, door scuffs, rear combination lamps, backup lamps, etc. The lighting device according to the present invention can also be used in indoor and outdoor advertising devices, display devices, and various train applications. It can also be used in all lighting-related and advertising-related fields that are currently being developed and commercialized or that will be realized through future technological developments.

[0013] <First Example> FIG. 1 is an example of a plan view of a lighting device according to an embodiment of the invention, FIG. 2 is an example of an AA side cross-sectional view of the lighting device of FIG. 2, and FIG. 3 is a partial enlarged view of a recess in a substrate of FIG. 2. Referring to FIGS. 1 to 3, a lighting device 100 may include a substrate 11, a light source 21 disposed on the substrate 11, a resin layer 31 disposed on the substrate 11, and a wavelength conversion layer 60 on the resin layer 31. The lighting device 100 can emit light emitted from the light source 21 as surface light. The lighting device 100 can emit light emitted from the light source 21 as surface light through a colored resin.

[0014] The substrate 11 is disposed below the light source 21 and the resin layer 31 and may function as a base member or a support member. The substrate 11 includes a printed circuit board (PCB). The substrate 11 may include, for example, at least one of a resin-based PCB, a metal core PCB, a flexible PCB, a ceramic PCB, or an FR-4 PCB. The substrate 11 may include, for example, a flexible PCB or a rigid PCB. The substrate 11 includes a wiring layer (not shown) on an upper portion thereof, and the wiring layer is electrically connected to the light source 21. The substrate 11 may include a protective layer (not shown) that protects the wiring layer. The protective layer may be made of a material that protects the wiring layer and reflects incident light. The protective layer may include a solder resist material. The substrate 11 may have a top view shape of a rectangle, a square, or another polygonal shape, or may be a bar shape having a curved surface. A connector (not shown) for supplying power is disposed in a portion of the substrate 11. As another example, the substrate 11 may include a transparent material. Since the substrate 11 is made of the transparent material, light emitted from the light source 21 is emitted in the upper, side, and lower directions of the substrate 11. The upper surface of the substrate 11 may have an X-Y plane, and the thickness of the substrate 11 may be a height in a Z direction perpendicular to the X and Y directions. Here, the X direction may be a first direction, the Y direction may be a second direction perpendicular to the X direction, and the Z direction may be a third direction perpendicular to the X and Y directions. The length of the substrate 11 in the first direction X and the second direction Y may be the same or different. For example, the length in the first direction X may be shorter than the length in the second direction Y. The length in the second direction Y may be more than twice the length in the first direction X. The thickness of the substrate 11 may be 0.5 mm or less, for example, in the range of 0.3 mm to 0.5 mm. The substrate 11 is thin, so the thickness of the lighting device is not increased. The substrate 11 is provided with a thickness of 0.5 mm or less, so that it can support a flexible module.

[0015] The thickness of the lighting device 100 may be the distance from the lower surface of the substrate 11 to the upper surface of the wavelength conversion layer 60. The thickness of the lighting device 100 may be, but is not limited to, 1 / 3 or less of the length of the shorter side of the substrate 11 in the first and second directions. The thickness of the lighting device 100 may be 5.5 mm or less, or may be in the range of 4.5 mm to 5.5 mm, or may be in the range of 4.5 mm to 5 mm. The thickness of the lighting device 100 may be 220% or less, for example, in the range of 180% to 220%, of the thickness of the resin layer 31. Since the lighting device 100 is provided with a thickness of 5.5 mm or less, it can be provided as a flexible and slim surface light module. If the thickness of the lighting device 100 is thinner than this range, the light diffusion space may be reduced, which may result in hot spots. If the thickness of the lighting device 100 is thicker than this range, the increased module thickness reduces spatial installation constraints and design freedom. The lighting device 100 can be provided as a module that allows for a curved structure due to its thin thickness. This reduces the design freedom and spatial constraints of the lighting device.

[0016] The lighting device 100 may include a reflective member 15 disposed on the substrate 11. The reflective member 15 may reflect light traveling to the upper surface of the substrate 11 by the resin layer 31. The reflective member 15 may be attached to the entire upper surface of the substrate 11 or to a portion of the upper surface, for example, between the substrate 11 and the resin layer 31. The reflective member 15 may have openings in which the light sources 21 are disposed. The reflective member 15 may be spaced apart from or in contact with the lower end of the side of the wavelength conversion layer 60. The reflective member 15 may have a single-layer or multi-layer structure. The reflective member 15 may include a light-reflecting material, for example, a metal or a non-metallic material. If the reflective member 15 is metallic, it may include a metal layer such as stainless steel, aluminum (Al), or silver (Ag). If the reflective member 15 is non-metallic, it may include a white resin material, a resin material filled with metal oxide and / or air, or a plastic material. For example, the reflective member 15 may include a white resin material or a polyester (PET) material. The reflective member 15 may include at least one of a low reflection film, a high reflection film, a diffuse reflection film, and a regular reflection film.

[0017] The light source 21 may include a plurality of light-emitting elements disposed on the substrate 11. The light-emitting elements may be arranged in N rows and M columns, where N and M are integers greater than or equal to 1 and may have a relationship of N≧M. For example, N may be 5 rows or greater, and M may be 2 columns or greater. The light-emitting elements may be connected in series, parallel, or series-parallel by a wiring layer on the substrate 11. The plurality of light-emitting elements may be connected in series or parallel in groups of two or more light-emitting elements, or the groups may be connected in series or parallel. Light emitted from the light source 21 is emitted through the resin layer 31. The light source 21 or the light-emitting element may include an LED chip. The light-emitting element may include at least one of blue, green, and red LED chips. The light-emitting element may be an LED chip, or the surface of the LED chip may be provided with a resin member containing phosphor and / or an insulating member without phosphor. For example, the light-emitting element may emit blue, red, or white light. As another example, the light-emitting element may be an ultraviolet (UV) or infrared LED. The light emitting element can emit light from four sides and the top. The light emitting element may be arranged on the substrate 11 as a flip-type LED chip, or as a horizontal or vertical LED chip electrically connected by wires. Because the light source 21 is provided as a flip-chip emitting light from at least five sides, the brightness distribution and directivity angle distribution of the light emitted from the light source 21 are improved. The light source 21 may be provided with a thickness of 0.4 mm or less, for example, in the range of 0.2 mm to 0.4 mm. The light source 21 is an array of micro-sized LED chips. The micro size may be in the range of 5 μm to 100 μm in side length. The pitch between the light emitting elements of the light source 21 may be the same as or larger than the thickness of the resin layer 31. The pitch may be, for example, 2.5 mm or more, for example, in the range of 2.5 mm to 8 mm or 5 mm to 7 mm. The pitch between the light emitting elements can be varied depending on the size of the LED chip. The light source 21 is arranged on the substrate 11 and sealed by the resin layer 31. The light source 21 may be in contact with the resin layer 31 .The resin layer 31 is disposed on the side and upper surface of the light source 21. The resin layer 31 protects the light source 21 and may be in contact with the upper surface of the substrate 11 and / or the reflective member 15. The resin layer 31 is disposed in the region between the light emitting elements and on the upper surface of each of the light emitting elements, and can guide and diffuse incident light.

[0018] The resin layer 31 is disposed on the substrate 11. The resin layer 31 contacts at least one of the upper surface of the substrate 11, the surface of the reflective member 15, and the surface of the light source 21 to seal the light source 21. The resin layer 31 may be formed as a single layer or multiple layers. If it is a single layer, it is formed as a layer of a transparent resin material. If it is a multilayer, it may include a first layer of a transparent resin material and a second layer having at least one of a diffusion layer, a phosphor layer, or an ink layer on the first layer. As another example, impurities such as a diffusion agent and / or a phosphor may be contained in a single resin layer. For example, in an embodiment of the invention, the resin layer 31 may be an impurity-free layer or a layer containing a small amount of a diffusion agent, e.g., 3 wt% or less, for light transmission efficiency. The diffusion agent may include at least one of PMMA (Poly Methyl Meth Acrylate), TiO2, SiO2, Al2O3, and silicone. The phosphor may include at least one of a red phosphor, a green phosphor, a blue phosphor, or a yellow phosphor. The resin layer 31 may include a resin or a resin-based material. The resin layer 31 may be a transparent resin material, such as a UV (Ultra Violet) resin, silicone, or epoxy. The resin layer 31 may be thicker than the light source 21. The resin layer 31 may be thicker than the substrate 11. The resin layer 31 may be five times or more, for example, in the range of five to nine times, the thickness of the substrate 11. By disposing the resin layer 31 to the above thickness, the light source 21 on the substrate 11 can be sealed to prevent moisture penetration and can support the substrate 11. The resin layer 31 and the substrate 11 can function as a flexible plate. The thickness of the resin layer 31 may be 4 mm or less, for example, in the range of 2 mm to 4 mm. If the thickness of the resin layer 31 is less than this range, hot spots may increase, and if the thickness is less than this range, luminous intensity may decrease or flexibility may be limited. The resin layer 31 is disposed between the substrate 11 and the wavelength conversion layer 60 to guide and diffuse the light emitted from the light source 21 to the wavelength conversion layer 60 .The linearity of light is improved when there are no impurities in the resin layer 31. The uniformity of light is improved when the material of the resin layer 31 has a refractive index of 1.4 or more at the emission wavelength. Therefore, the refractive index of the resin material may be 1.8 or less, for example, in the range of 1.1 to 1.8 or 1.4 to 1.6.

[0019] The resin layer 31 may have a polygonal or curved shape in top view. The bottom surface area of ​​the resin layer 31 may be smaller than the top surface area of ​​the substrate 11, and may be, for example, 60% or more of the top surface area of ​​the substrate 11. The side surfaces of the resin layer 31 may be spaced apart from the outer surfaces of the substrate 11.

[0020] The wavelength conversion layer 60 is disposed on the resin layer 31. The wavelength conversion layer 60 may be disposed on the upper surface of the resin layer 31 or on the upper and side surfaces of the resin layer 31. For example, the wavelength conversion layer 60 may include an upper portion disposed on the upper surface of the resin layer 31 and side portions extending from the edge of the upper portion toward the substrate 11. The side portions of the wavelength conversion layer 60 may cover the side surfaces of the resin layer 31. The upper and side portions of the wavelength conversion layer 60 may contact the surface of the resin layer 31. The wavelength conversion layer 60 may include a single layer or multiple layers. If the wavelength conversion layer 60 is a single layer, it may be formed of layers of resin materials containing different impurities. If the wavelength conversion layer 60 is a multilayer, it may be at least two or three layers, formed of layers of resin materials containing different impurities, each of which contains at least one type of impurity.

[0021] As shown in FIGS. 1 and 2 , the wavelength conversion layer 60 may include a phosphor layer 41 and an ink layer 51. The phosphor layer 41 is disposed between the resin layer 31 and the ink layer 51. The phosphor layer 41 is formed on the surface of the resin layer 31. The phosphor layer 41 extends from the upper surface of the resin layer 31 to the lower end of the side. The lower outer end of the phosphor layer 41 may contact the upper surface of the substrate 11 and / or the upper surface of the reflective member 15. The ink layer 51 is formed on the outer surface of the phosphor layer 41 and may contact the upper portion 42 and the side portion 43 of the phosphor layer 41. Here, the upper portion 42 of the phosphor layer 41 and the upper portion 52 of the ink layer 51 may be the upper portion of the wavelength conversion layer 60, and the side portion 43 of the phosphor layer 41 and the side portion 53 of the ink layer 51 may be the side portion of the wavelength conversion layer 60. The ink layer 51 may be the outermost layer of the wavelength conversion layer 60 and may provide a surface color for the lighting device. The color of the phosphor added to the phosphor layer 41 is not exposed on the surface of the ink layer 51. The phosphor layer 41 may be made of a transparent resin material, such as silicone or epoxy, or a UV (ultraviolet) resin. The phosphor layer 41 may contain a colored phosphor in a transparent material, such as at least one of a red phosphor, a blue phosphor, a yellow phosphor, a green phosphor, or a white phosphor. The phosphor layer 41 may contain a phosphor and a diffusing agent. The thickness of the phosphor layer 41 may be 1 mm or less, for example, in the range of 300 μm to 1 mm or 300 μm to 700 μm. The content of the phosphor added to the phosphor layer 41 may be 40 wt % or less, for example, in the range of 10 wt % to 23 wt % or 15 wt % to 30 wt % based on the weight of the phosphor layer 41. If the thickness and content of the phosphor layer 41 exceed the above ranges, the light transmission efficiency decreases, and if they are below the above ranges, the wavelength conversion efficiency decreases.

[0022] The phosphor content of the phosphor layer 41 can be low because the ink layer 51 is disposed on the surface. That is, light emitted from the light source 21 is wavelength-converted by the phosphor layer 41 before being emitted, and light that has not been wavelength-converted is blocked or reflected by the ink layer 51. If a diffusing agent is added to the phosphor layer 41, the content may be less than the phosphor content, and the content of the diffusing agent may be 3 wt% or less, for example, in the range of 1 wt% to 3 wt%, based on the weight of the phosphor layer 41. If the diffusing agent content exceeds this range, the light transmission efficiency decreases, and if it is less than this range, the light distribution becomes non-uniform. In an embodiment of the invention, if the diffusing agent is eliminated, hot spots can be reduced by using phosphor and ink particles.

[0023] The ink layer 51 may be made of a transparent resin material, such as silicone or epoxy, or may be made of UV (ultraviolet) resin. The ink layer 51 may have a thickness of 1 mm or less, for example, in the range of 300 μm to 1 mm or 300 μm to 700 μm. The ink layer 51 may contain ink particles. The ink particles may be added to the ink layer 51 at a concentration of 20 wt % or less, for example, in the range of 4 wt % to 20 wt % or 4 wt % to 15 wt %, based on the weight of the ink layer 51. The lighting device 100 may reduce color differences in surface colors and reduce hot spots depending on the content of the ink particles. The weight of the ink particles added to the ink layer 51 may be less than the weight of the phosphor added to the phosphor layer 41. The ink particles may be distributed on the surface of the wavelength conversion layer 60 more than the phosphor. As a result, the color of the surface of the wavelength conversion layer 60 may be provided by the color of the ink particles. Such ink particles can suppress light transmission and reduce hot spots. The ink particles may include colored ink particles, for example, at least one of a metallic ink, a UV ink, and a curable ink. The size of the ink particles may be smaller than the size of the phosphor. The surface color of the ink particles may be any one of green, red, yellow, and blue. The type of ink may be selected from PVC (Polyvinyl Chloride) ink, PC (Polycarbonate) ink, ABS (Acrylonitrile Butadiene Styrene Copolymer) ink, UV resin ink, epoxy ink, silicone ink, PP (Polypropylene) ink, water-based ink, plastic ink, PMMA (Polymethyl Methacrylate) ink, and PS (Polystyrene) ink. Here, the width or diameter of the ink particles may be 5 μm or less, or may be in the range of 0.05 μm to 1 μm. At least one of the ink particles may be smaller than the wavelength of light. The color of the ink particles may include at least one of red, green, yellow, and blue.For example, the phosphor may emit red wavelength light and the ink particles may contain red. For example, the red color of the ink particles may be darker than the color of the phosphor or the wavelength of light. The ink particles may be a color different from the color of the light emitted from the light source 21. The ink particles may have the effect of blocking or shielding incident light.

[0024] The color on the surface of the wavelength conversion layer 60 is provided by the color of the ink particles, which can reduce color differences in the appearance when the light source 21 is turned on and off and prevent a decrease in wavelength conversion efficiency. Light emitted from the light source 21 is wavelength-converted while passing through the phosphor layer 41 of the wavelength conversion layer 60 and then emitted through the ink layer 51, while the unconverted light is blocked or reflected by the ink layer 51. As a result, the wavelength-converted light can be emitted as surface light through the surface of the wavelength conversion layer 60. The upper portion 42 of the phosphor layer 41 may be formed to be the same thickness as or thicker than the side portions 43 of the phosphor layer 41. This improves the wavelength conversion efficiency of the upper portion 42 of the phosphor layer 41. The upper portion 52 of the ink layer 51 may be formed to be the same thickness as or thicker than the side portions 53 of the ink layer 51. This prevents hot spots in the upper portion 52 of the ink layer 51. The side 43 of the phosphor layer 41 may be perpendicular, inclined, or curved from the top of the substrate 11 to the top 42 of the phosphor layer 41. The side 53 of the ink layer 51 may be perpendicular, inclined, or curved from the top of the substrate 11 to the top 52 of the ink layer 51. The shapes of the phosphor layer 41 and the ink layer 51 may vary depending on the outer surface of the resin layer 31.

[0025] As shown in FIGS. 1 and 3, the substrate 11 may include a recess 13 in a portion of its side surface. The recess 13 may be a groove recessed inward from the outer surface S1 of the substrate 11. The recess 13 may be a hole or a groove penetrating from the upper surface to the lower surface of the substrate 11. When the recess 13 is a groove, a region of the substrate 11 is disposed below the recess 13. The length W0 (FIG. 1) of the recess 13 is the length in the second direction Y and may be 500 μm or more, for example, in the range of 500 μm to 10 mm. If the length W0 of the recess 13 is narrower than this range, the filling pressure when injecting the resin layer 31 increases or the filling efficiency decreases. If the length W0 is greater than this range, light leakage increases. The recess 13 formed in a portion of the outer surface S1 of the substrate 11 may be spaced a predetermined distance K1 from one corner of the substrate 11, and the distance K1 may be between one and three times the length W0 of the recess 13. This makes it possible to prevent the rigidity of the substrate 11 from being reduced due to the space in which the recess 13 is formed.

[0026] As shown in FIG. 3 , the width W1 of the recess 13 is the distance from the outer surface S1 of the substrate 11 toward the inside of the resin layer 31 (e.g., X), and may be, for example, 0.3 mm or more, for example, in the range of 0.3 mm to 10 mm, or 0.3 mm to 5 mm. The width W1 of the recess 13 can be varied depending on the distance D1 from the side surface S2 of the wavelength conversion layer 60 to the outer surface S1 of the substrate 11. The distance D1 between the outer surface of the recess 13 and the outer surface S2 of the wavelength conversion layer 60 can be varied depending on the size of the exposed upper surface of the substrate 11, and may be 0.3 mm or more, for example, in the range of 0.3 mm to 1 mm, or 0.3 mm to 0.8 mm. The distance D1 may be a distance that does not affect the modules during the cutting process between the modules. The outer surface of the recess 13 may be flush with the side surface of the substrate 11. The distance D2 between the inner surface of the wavelength conversion layer 60 and the inner surface of the recess 13 may be 0.1 mm or more, for example, in the range of 0.1 mm to 0.4 mm or 0.1 mm to 0.3 mm. The distance D2 can be varied depending on the thickness of the substrate 11, the depth of the groove 35A, and the inclination angles R1 and R2. If the width W1 of the recess 13 is narrower than this range, the filling pressure when injecting the resin layer 31 will be high or the filling efficiency will be reduced. If the width W1 is greater than this range, light leakage will be large.

[0027] The width W1 of the recess 13 may be greater than the thickness of the phosphor layer 41. The width W1 of the recess 13 may be greater than the thickness of the ink layer 51. The width W1 of the recess 13 may be greater than the thickness of the wavelength conversion layer 60. Thus, the side edge of the wavelength conversion layer 60 is coupled into the recess 13. The width W1 and length W0 of the recess 13 may be the same or different. For example, the length W0 of the recess 13 may be greater than the width W1 to improve filling efficiency. The depth of the recess 13 may be the same or smaller than the thickness of the substrate 11. If the depth of the recess 13 is the same as the thickness of the substrate 11, the lower surface of the end of the wavelength conversion layer 60 may be exposed to the lower surface of the substrate 11. If the depth of the recess 13 is smaller than the thickness of the substrate 11, the lower surface of the end of the wavelength conversion layer 60 may be spaced apart from the lower surface of the substrate 11 or not exposed to the lower surface of the substrate 11. Alternatively, the lower side edge of the wavelength conversion layer 60 may be disposed within the recess 13 of the substrate 11 or may be flush with the upper surface of the substrate 11. The overall height of the region or side of the wavelength conversion layer 60 overlapping the recess 13 of the substrate 11 may be greater than or equal to the height of the wavelength conversion layer 60 disposed on the substrate 11.

[0028] A portion 35 of the resin layer 31 is disposed in the recess 13. Portions 45 and 55 of the wavelength conversion layer 60 are disposed in the recess 13. The portion 35 of the resin layer 31 and the portions 45 and 55 of the wavelength conversion layer 60 are disposed in the recess 13. An inner region of the recess 13 may vertically overlap the resin layer 31. The recess 13 may vertically overlap sides (e.g., 43 and 53) of the wavelength conversion layer 60. The recess 13 may vertically overlap sides 43 of the phosphor layer 41 and sides 53 of the ink layer 51. At least one or all of the lower end 45 of the side 43 of the phosphor layer 41 and the lower end 55 of the side 53 of the ink layer 51 are disposed in the recess 13.

[0029] A portion 35 of the resin layer 31 may be exposed at an outer surface of the recess 13 in the substrate 11. The outer surface of the portion 35 of the resin layer 31 is disposed outward from the outer surface S2 of the wavelength conversion layer 60. The outer surface of the portion 35 of the resin layer 31 is disposed outward from the outer surface of the side portion 53 of the ink layer 51. The portion 35 of the resin layer 31 is disposed below the upper surface of the substrate 11, and its outer surface may protrude outward from the outer surface of the wavelength conversion layer 60 through the recess 13. The portion 35 of the resin layer 31 may be a protrusion that protrudes into the recess 13. A lower end of the portion 35 of the resin layer 31 may be exposed at a lower surface of the recess 13 in the substrate 11. At least one or both of the lower end of the side portion 43 of the phosphor layer 41 and the lower end of the side portion 53 of the ink layer 51 may be exposed at a lower surface of the recess 13 in the substrate 11. The area of ​​the lower end of the side 53 of the ink layer 51 at the lower surface of the recess 13 may be equal to or larger than the area of ​​the lower end of the side 43 of the phosphor layer 41 .

[0030] The portion 35 of the resin layer 31 may include an inner portion 13A disposed inside the lower end portions (e.g., 45, 55) of the sides of the wavelength conversion layer 60 and an outer portion exposed to the outside. The lower end portions of the sides of the wavelength conversion layer 60 extend between the inner portion 13A and the outer portion. The lower end 43 of the side portion 43 of the phosphor layer 41 may be disposed between the inner portion 13A and the outer portion, or the lower end 45 of the side portion 43 of the phosphor layer 41 and the lower end 55 of the side portion 53 of the ink layer 51 may be disposed between the inner portion 13A and the outer portion. The inner surfaces of the lower ends 45, 55 of the wavelength conversion layer 60 disposed in the recess 13 may be inclined at a first angle R1. The first angle R1 may be an acute angle with respect to the horizontal lower surface of the substrate 11. The outer surfaces of the lower ends of the wavelength conversion layer 60 disposed in the recess 13 may be inclined at a second angle R2. The second angle R2 may be an acute angle with respect to the horizontal lower surface of the substrate 11. The first angle R1 and the second angle R2 may be the same or different, and may be in the range of 1 to 60 degrees or 5 to 30 degrees. The first angle R1 and the second angle R2 may vary depending on the angle of the groove 35A formed by cutting the portion 35 of the resin layer 31 in the recess 13. The cutting may be performed from the lower surface of the portion 35 of the resin layer 31 toward the upper portion of the recess 13, and the cut groove 35A may be formed in a triangular or rectangular shape within the recess 13. The overall area of ​​the cut groove 35A may be smaller than the area of ​​the recess 13. The lower surface area of ​​the groove 35A may be larger than the upper surface area. The inner surface of the lower end of the wavelength conversion layer 60 may contact the substrate 11 or the surface or side surface of the recess 13. That is, the lower end 45 of the side portion 43 of the phosphor layer 41 may contact the inner surface and both side surfaces of the recess 13. The lower end 55 of the side portion 53 of the ink layer 51 may contact both sides of the recess 13. As a result, the lower end of the wavelength conversion layer 60 contacts the inner surface of the substrate 11, which is the side of the recess 13, thereby reducing or eliminating the space between the wavelength conversion layer 60 and the substrate 11 and blocking light leakage.

[0031] Here, the lower end 45 of the phosphor layer 41 may be formed to a thickness equal to or thinner than the thickness of the side portion 43 of the phosphor layer 41. The lower end 45 of the phosphor layer 41 is formed along the inclined inner surface of the cut groove 35A, so that it is formed to a thickness equal to or thinner than the thickness of the side portion 43 of the phosphor layer 41. Here, the lower end 55 of the ink layer 51 may be formed to a thickness equal to or thicker than the thickness of the side portion 53 of the ink layer 51. The lower end 55 of the ink layer 51 is filled between the inclined outer surface of the cut groove 35A and the outer surface of the lower end 45 of the phosphor layer 41, so that it is formed to be thicker than the thickness of the side portion 53 of the ink layer 51. The outer upper surface of the portion 35 of the resin layer 31 disposed in the recess 13 may have a stepped structure with respect to the outer surface S2 of the wavelength conversion layer 60 or the outer surface of the ink layer 51.

[0032] Referring to the first modified example of FIG. 4 , a portion of the resin layer 31 may extend or protrude into the recess 13 of the substrate 11. A lower end 50C of the wavelength conversion layer 50 extends through the portion of the resin layer 31 disposed in the recess 13. The wavelength conversion layer 50 may include an upper portion 50A and a side portion 50B. The lower end 50C of the wavelength conversion layer 50, for example, the lower end 50C of the side portion 50B, may extend into the recess 13 of the substrate 11 or penetrate the portion 35 of the resin layer 31. The wavelength conversion layer 50 may be formed as a single layer and may include phosphor and ink particles therein. The content of the phosphor added to the wavelength conversion layer 50 may be greater than the content of the ink particles. The content of the phosphor may be 23 wt% or less, or in the range of 10 wt% to 23 wt%, based on the weight of the wavelength conversion layer 50, and the content of the ink particles may be 12 wt% or less, for example, in the range of 4 wt% to 12 wt%, based on the weight of the wavelength conversion layer 50. The content of the phosphor in the wavelength conversion layer 50 is higher than the content of the ink particles by 3 wt% or more, or in the range of 3 wt% to 13 wt%, based on the weight of the wavelength conversion layer 50. Because the weight of the ink particles is smaller than the weight of the phosphor, the ink particles can be distributed in an area adjacent to the surface of the wavelength conversion layer 50 rather than the phosphor. As a result, the color of the surface of the wavelength conversion layer 50 is provided by the color of the ink particles. Such ink particles can suppress light transmission and reduce hot spots.

[0033] The lower end 50C of the wavelength conversion layer 50 may have a width or thickness that increases toward the lower surface of the recess 13. The lower end 50C of the wavelength conversion layer 50 may be spaced farther from the outer surface of the substrate 11 from the upper end of the inner surface to the lower end of the inner surface, and may be closer to the outer surface of the substrate 11 from the upper end to the lower end of the outer surface. The recess 13 may be a groove or a hole, and if it is a groove, it may be formed to a depth from the upper surface of the substrate 11 that is thinner than the thickness of the substrate 11. The lower end of the wavelength conversion layer 50 disposed in the groove may be spaced apart from the lower surface of the substrate 11. In this structure, if the thickness of the substrate 11 is 1 mm or more, a groove is provided in the substrate 11. The lower end 50C of the wavelength conversion layer is not exposed to the outer surface of the substrate 11 because the outer surface is covered by the portion 35 of the resin layer 31.

[0034] Referring to the second modification of FIG. 5 , the recess 13 of the substrate 11 is disposed in a portion of one side surface S1. A portion 35 of the resin layer 31 may extend or protrude into the recess 13 of the substrate 11. Here, lower ends of the sides (e.g., 43, 53) of the wavelength conversion layer 60 are disposed on the recess 13. The lower ends of the sides (e.g., 43, 53) of the wavelength conversion layer 60 may contact the portion 35 of the resin layer 31 disposed in the recess 13. That is, at least one or both of the lower end of the side 43 of the phosphor layer 41 and the lower end of the side 53 of the ink layer 51 of the wavelength conversion layer 60 may contact the portion 35 of the resin layer 31 exposed on the surface of the recess 13. The portion 35 of the resin layer 31 disposed in the recess 13 may vertically overlap the sides (e.g., 43, 53) of the wavelength conversion layer 60. The portion 35 of the resin layer 31 disposed in the recess 13 can overlap the side portion 43 of the phosphor layer 41 and the side portion 53 of the ink layer 51 in the vertical direction.

[0035] The outer surface of the portion 35 of the resin layer 31 is flush with the outer surface S1 of the substrate 11. The outer surface of the portion 35 of the resin layer 31 is located outward of the outer surface S2 of the wavelength conversion layer 60 or the outer surface of the ink layer 51. Here, since the lower side edge of the wavelength conversion layer 60 contacts the surface of the portion 35 of the resin layer 31, the gap between the lower side edge of the wavelength conversion layer 60 and the substrate 11 is narrowed. As a result, light leakage through the gap between the substrate 11 and the wavelength conversion layer 60 can be reduced.

[0036] Referring to the third modified example of FIG. 6, a groove 35A may be formed in the recess 13 of the substrate 11, and a light-blocking portion 37 may be formed in the groove 35A. The light-blocking portion 37 may be formed in the groove 35A and may contact the inner surface of the substrate 11 or the surface of the recess 13. The light-blocking portion 37 may block light leakage within the recess 13. The light-blocking portion 37 may include an organic filler or an inorganic filler in a resin. The light-blocking portion 37 may include a filler that reflects or absorbs light.

[0037] Referring to the fourth and fifth modified examples of FIGS. 7 and 8 , a portion 35 of the resin layer 31 may extend or protrude into the recess 13 of the substrate 11. The lower end of the phosphor layer 41 or the ink layer 51 of the wavelength conversion layer 60 is disposed in the recess 13. As shown in FIG. 7 , the lower end 47 of the phosphor layer 41 is disposed in the recess 13. This allows the lower end 47 of the phosphor layer 41 to fill the recess 13, thereby preventing direct leakage of light from the light source 21. Here, the lower end of the side portion 53 of the ink layer 51 may contact the lower end 47 extending from the side portion 43 of the phosphor layer 41. The lower end of the side portion 53 of the ink layer 51 may vertically overlap the lower end 57 of the side portion 43 of the phosphor layer 41. As shown in FIG. 8 , the lower end 57 of the ink layer 51 is disposed in the recess 13. As a result, the lower end 57 of the ink layer 51 fills the recess 13, preventing light leakage due to ink particles. Here, the lower end of the side portion 43 of the phosphor layer 41 may contact the lower end 57 extending from the side portion 53 of the ink layer 51. The lower end of the side portion 43 of the phosphor layer 41 may vertically overlap the lower end 57 of the side portion 53 of the ink layer 51. As shown in Figures 7 and 8, the portion 35 of the resin layer 31 and the lower end 47 of the phosphor layer 41 or the lower end 57 of the ink layer 51 are formed within the recess 13 of the substrate 11, thereby preventing moisture penetration and light leakage.

[0038] Referring to the sixth modification of FIG. 9 , in a lighting device 100A, a resin layer 31 disposed on a substrate 11 and a light source 21 may include a convex curved surface Ra extending from the upper surface to the lower end of the side surface. The wavelength conversion layer 60A is stacked on the upper surface and curved surface Ra of the resin layer 31. For example, the upper portion 42 and side portion 43 of a phosphor layer 41A extend from the upper surface and curved surface Ra of the resin layer 31, and the upper portion 52 and side portion 53 of the ink layer 51A extend from the upper surface and curved surface Ra of the resin layer 31. As a result, the side portion 43 of the phosphor layer 41A and the side portion 53 of the ink layer 51A are provided with convex curved surfaces. The side portion 43 of the phosphor layer 41A and the side portion 53 of the ink layer 51A are formed with the same curvature as the curved surface Ra of the resin layer 31A. A portion 35 of the resin layer 31A may extend or protrude into a recess 13 of the substrate 11. The lower end 45 of the side portion 43 of the phosphor layer 41A and / or the lower end 55 of the side portion 53 of the ink layer 51 may extend or protrude into the recess 13 of the substrate 11 .

[0039] Referring to the seventh modification of FIG. 10 , the substrate 11 is provided without a recess 13. A resin layer 31 is disposed to cover the substrate 11 and the light source 21, and a side portion 36 of the resin layer 31 may be exposed or protrude through an open hole 63 in the wavelength conversion layer 60. The wavelength conversion layer 60 may include a first region 62 having a side corresponding to a side of the resin layer 31. The first region 62 of the wavelength conversion layer 60 and the side portion 36 of the resin layer 31 may vertically overlap. The side portion 36 of the resin layer 31 may contact the substrate 11 and / or the reflective member 15. The first region 62 may be a side edge region of the wavelength conversion layer 60, and may be, for example, a side edge of the phosphor layer 41 or / and a side edge of the ink layer 51. The wavelength conversion layer 60 may include a hole 63 on the first region 62 and the substrate 11, and the side portion 36 of the resin layer 31 may be exposed or protrude through the hole 63. The first region 62 of the wavelength conversion layer 60 is disposed above the hole 63 of the wavelength conversion layer 60. The height of the hole 63 may be 0.5 mm or less, for example, in the range of 0.2 mm to 0.5 mm. The same material as the phosphor layer 41 and / or the ink layer 51 is formed on the side portion 36 of the resin layer 31.

[0040] The manufacturing process of the lighting device will be described with reference to FIGS.

[0041] As shown in FIGS. 11A and 11B, a light source 21 having a plurality of light-emitting elements is disposed on a substrate 11. The light-emitting elements are spaced apart by a predetermined distance to reduce optical interference and improve heat dissipation efficiency. The distance may be, for example, 2.5 mm or more, for example, in the range of 2.5 to 8 mm, or 5 mm or more, for example, in the range of 5 to 7 mm. The distance between the light-emitting elements can be varied depending on the size of the LED chips. Recesses 13 are disposed in portions of the substrate 11, penetrating from the upper surface to the lower surface. The recesses 13 are disposed in the regions between adjacent unit modules. The lower portions of the recesses 13 are supported by the lower frame 91. The lower frame 91 is disposed below the substrate 11, and an upper frame 81 is coupled to the upper portion of the substrate. The upper frame 81 has resin injection holes 85 that are connected to the recesses 13. Empty spaces 83 for resin layers that cover the light sources 21 are disposed within the upper frame 91.

[0042] 11(C), liquid resin is injected through the resin injection hole 85. At this time, the resin injection pressure is such that the resin fills the entire area through the empty space 83 of the upper frame 81. At this time, the recess 13 is filled with the resin.

[0043] 11C and 12D, when the resin hardens, the upper frame 81 and the lower frame 91 are separated, and at this time, the resin layer 31 connects adjacent modules through the recesses 13. A groove 35A is formed by cutting a portion of the resin layer 31 filled in the recesses 13. The groove 35 formed by cutting a portion of the resin layer 31 is concave from the bottom surface of the recess 13 toward the top surface and is open toward the top. Here, the groove 35 of the recess 13 may be formed in the shape of a hole formed from the bottom surface of the recess 13 to the depth of the recess 13, or in the shape of a groove that is less than the depth of the recess 13.

[0044] As shown in FIG. 12E, a wavelength conversion layer 60 is formed on the surface of the resin layer 31. The wavelength conversion layer 60 may include at least one or both of a phosphor layer 41 and an ink layer 51. The wavelength conversion layer 60 may be formed through an injection molding or dispensing process. The phosphor layer 41 of the wavelength conversion layer 60 is formed on the surface of the resin layer 31, and the ink layer 51 is formed on the surface of the phosphor layer 41. A portion of the wavelength conversion layer 60 extends into the groove 35A of the recess 13 (FIG. 12F). For example, a portion of the phosphor layer 41 may extend into the groove 35A of the recess 13 and contact the portion 35 of the resin layer 31 disposed in the groove 35A of the recess 13. A portion of the ink layer 51 may extend into the groove 35A of the recess 13 and contact the portion of the phosphor layer 41 disposed in the groove 35A of the recess 13. When the phosphor layer 41 and the ink layer 51 are stacked, the bottom surfaces of the phosphor layer 41 and the ink layer 51 may be partially exposed on the bottom surfaces of the recesses 13. As shown in Figures 12(E) and 12(F), the substrate 11 is cut between the recesses 13 through the spaces between adjacent wavelength conversion layers 60 to manufacture individual modules.

[0045] As shown in FIG. 13 , the recesses 13 and 13C of the substrate 11 are formed on the opposite side surfaces S1a and S1b of the substrate 11, respectively. The recesses 13 and 13C of the substrate 11 may be spaced apart by a distance greater than the width of the wavelength conversion layer 60 in the second direction. The first recess 13 may be recessed from the first side surface S1a of the substrate 11 toward the second side surface S2b and may vertically overlap the first side surface S2a of the wavelength conversion layer 60. The second recess 13C may be recessed from the second side surface S1b of the substrate 11 toward the first side surface S1a and may vertically overlap the second side surface S2b of the wavelength conversion layer 60. Since the recesses 13 and 13C of the substrate 11 are spaced apart from each other, the filling efficiency of the resin is improved. Each of the recesses 13 and 13C may be selected from the structures shown in FIGS. 1 to 10.

[0046] As shown in FIG. 14 , the recesses 13 and 13C of the substrate 11 are formed on the same first side S1a of the substrate 11. The recesses 13 and 13C of the substrate 11 may be spaced apart by at least half the length of the wavelength conversion layer 60 in the first direction X. The first and second recesses 13 and 13C are recessed from the first side S1a of the substrate 11 toward the second side S1b and may vertically overlap the first side S2a of the wavelength conversion layer 60. The first recess 13 and the second recess 13C are disposed at the same distance from the center of the first side S1a of the substrate 11 in the second direction Y. This allows the recesses 13 and 13C of the substrate 11 to be disposed in different regions, improving the resin filling efficiency. Each of the recesses 13 and 13C may be selected from the structures shown in FIGS. 1 to 10 .

[0047] FIG. 15 is a plan view of a vehicle to which a vehicle lamp having a lighting device according to an embodiment is applied, and FIG. 16 is a drawing showing a lighting device or a vehicle lamp having a lighting device disclosed in the embodiment.

[0048] 15 and 16, in a moving body or vehicle 900, a front lamp 850 may include one or more lighting modules, and the activation timing of these lighting modules may be individually controlled to provide not only a normal headlamp function but also additional functions such as a welcome light or a celebration effect when the driver opens the vehicle door. The lamp may be applied to daytime running lights, high beams, low beams, fog lights, or turn signals. In the vehicle 900, a tail lamp 800 may include multiple lamp units 810, 812, 814, and 816 supported by a housing 801. For example, the lamp units 810, 812, 814, and 816 may include a first lamp unit 810 disposed on the outside, a second lamp unit 814 disposed around the inside of the first lamp unit 810, and third and fourth lamp units 814 and 816 disposed inside the second lamp unit 814, respectively. The first to fourth lamp units 810, 812, 814, and 816 may selectively be applied to the lighting devices disclosed in the embodiments, and red or white lens covers may be disposed on the exterior of the lighting devices to suit the lighting characteristics of the lamp units 810, 812, 814, and 816. The lighting devices disclosed in the embodiments, when applied to the lamp units 810, 812, 814, and 816, may emit surface light with a uniform distribution. The first and second lamp units 810 and 812 may have at least one of a curved shape, a linear shape, an angular shape, an inclined shape, and a flat shape, or a combination thereof. One or more of the first and second lamp units 810 and 812 may be disposed in each tail light. The first lamp unit 810 may be used as a tail light, the second lamp unit 812 as a brake light, the third lamp unit 814 as a backup lamp, and the fourth lamp unit 816 as a turn signal lamp. The construction and location of such illumination lamps can be varied.

[0049] The features, structures, and effects described in the above embodiments are included in at least one embodiment of the present invention and are not necessarily limited to one embodiment. Furthermore, the features, structures, and effects illustrated in each embodiment may be combined or modified with other embodiments by a person skilled in the art to which the embodiment belongs. Therefore, such combinations and modifications are to be construed as falling within the scope of the present invention. Furthermore, while the above description focuses on the embodiments, these are merely examples and do not limit the present invention. A person skilled in the art to which the present invention belongs may make various modifications and applications not exemplified above within the scope of the present embodiments, provided that such modifications and applications do not deviate from the essential characteristics of the present embodiments. For example, each component specifically presented in the embodiments may be modified. Such modifications and variations are to be construed as falling within the scope of the present invention, as defined by the appended claims.

Claims

1. a substrate including a recess; a light source disposed above the substrate; a resin layer disposed on the substrate; a wavelength conversion layer disposed on the resin layer, a portion of the resin layer disposed within a recess in the substrate; a portion of the wavelength converting layer disposed over a recess in the substrate; an outermost surface of the portion of the resin layer disposed in the recess of the substrate is located outside an inner surface of the wavelength conversion layer.

2. The lighting device according to claim 1 , wherein the recess in the substrate overlaps with side surfaces of the wavelength conversion layer and the resin layer in a vertical direction, which is a thickness direction of the substrate.

3. The illumination device of claim 1 , wherein the depth of the recess in the substrate is the same as the thickness of the substrate.

4. a substrate including a recess; a light source disposed above the substrate; a resin layer disposed on the substrate; a wavelength conversion layer disposed on the resin layer, The light source includes a plurality of light-emitting elements arranged in N rows and M columns, where N is an integer of 1 or more, and M is an integer of 2 or more; the wavelength conversion layer includes an upper portion disposed on an upper surface of the resin layer, and a side portion connected to the upper portion and disposed on a side surface of the resin layer, the recess in the substrate overlaps a portion of a side of the wavelength conversion layer in a vertical direction, which is a thickness direction of the substrate; The depth of the recess in the substrate is the same as the thickness of the substrate.

5. The lighting device according to claim 1 , wherein a portion of the recess in the substrate is located inside an outer surface of the resin layer.

6. The lighting device according to claim 5 , wherein another part of the recess of the substrate is located inside the outer surface of the resin layer.

7. 7. The lighting device of claim 1, wherein a width of the recess in the substrate is greater than a thickness of a side of the wavelength-converting layer.

8. The lighting device according to claim 1 , wherein a lower end of the wavelength conversion layer that overlaps the recess of the substrate is disposed within the recess of the substrate.

9. 9. The lighting device of claim 1, wherein a maximum height of a region of the wavelength-converting layer that overlaps the recess of the substrate is greater than or equal to a height of the wavelength-converting layer disposed on the substrate.

10. the recess is a hole disposed in a portion of the substrate and penetrating from the upper surface to the lower surface of the substrate; The lighting device according to claim 1 , wherein a lower end of the wavelength conversion layer disposed in the recess is exposed at a lower surface of the substrate.

11. The lighting device according to claim 1 , wherein the light emitting element serving as the light source includes an LED chip and a resin member disposed on the LED chip.

12. the wavelength conversion layer includes a phosphor layer and an ink layer disposed on the phosphor layer; The lighting device according to claim 1 , wherein at least one of the phosphor layer and the ink layer is disposed within the recess.

13. The lighting device according to claim 1 , wherein the wavelength conversion layer is formed by mixing a colored phosphor and a colored ink.

14. The lighting device according to claim 1 , wherein the pitch between the light emitting elements serving as the light source is 5 mm or more.

Images