Multilayer electronic components

Abstract

To provide a compact and large-capacity laminated electronic component with high reliability by improving the reliability and electrode connectability of an internal electrode and reducing the thickness deviation of the internal electrode.SOLUTION: A laminated electronic component includes a main body including a dielectric layer and internal electrodes arranged alternately with the dielectric layer, and an external electrode placed on the main body and connected to the internal electrode, and the internal electrode contains Ni, Ba, Ti, O, and Tb, and the Tb content with respect to the total of the Ni, Ba, Ti, O, and Tb contents is 0.45 to 3.0 wt.%.SELECTED DRAWING: Figure 2

Description

[Technical Field]

[0001] The present invention relates to a multilayer electronic component. [Background technology]

[0002] Multi-layered ceramic capacitors (MLCCs), which are one type of multilayer electronic component, are chip-type capacitors that are mounted on printed circuit boards of various electronic products, such as visual devices such as liquid crystal displays (LCDs) and plasma display panels (PDPs), computers, smartphones, and mobile phones, and serve to charge and discharge electricity.

[0003] Such multilayer ceramic capacitors have the advantages of being small, yet having high capacitance, and being easy to mount, and can be used as components in various electronic devices. Recently, as electronic device components have become smaller, there has been an increasing demand for smaller multilayer ceramic capacitors with higher capacitance.

[0004] In order to reduce the size and increase the capacitance of multilayer ceramic capacitors, a technology is needed that can reduce the thickness of the internal electrodes and dielectric layers.

[0005] However, as the internal electrodes and dielectric layers become thinner, the connectivity of the internal electrodes decreases, and the internal thickness deviation increases, which may result in a decrease in reliability. Summary of the Invention [Problem to be solved by the invention]

[0006] One of several objects of the present invention is to improve the reliability of the internal electrodes.

[0007] One of several objects of the present invention is to improve the electrode connectivity of the internal electrodes.

[0008] One of several objects of the present invention is to reduce thickness variations of the internal electrodes.

[0009] One of several objects of the present invention is to provide a highly reliable, compact, high-capacity laminated electronic component.

[0010] However, the object of the present invention is not limited to the above-mentioned contents, and can be more easily understood in the course of describing specific embodiments of the present invention. [Means for solving the problem]

[0011] According to one embodiment of the present invention, there is provided a multilayer electronic component including: a main body including dielectric layers and internal electrodes alternately arranged with the dielectric layers; and external electrodes arranged on the main body and connected to the internal electrodes, wherein the internal electrodes include Ni, Ba, Ti, O, and Tb, and the Tb content with respect to the total content of Ni, Ba, Ti, O, and Tb is 0.45 to 3.0 wt%. [Effects of the Invention]

[0012] One of the effects of the present invention is that it improves the reliability of multilayer electronic components.

[0013] One of the effects of the present invention is that the addition of Tb to the internal electrodes delays the initial sintering of the internal electrodes, reduces the sintering mismatch between the internal electrodes and the dielectric layers, improves the connectivity of the internal electrodes, and reduces the thickness deviation of the internal electrodes.

[0014] One of the effects of the present invention is that Tb in the internal electrodes migrates (squeezes out) into the dielectric layer during firing and is selectively substituted into the A-site or B-site of BaTiO3 in the dielectric layer, suppressing oxygen vacancies.

[0015] One of the advantages of the present invention is that it improves the capacity of multilayer electronic components.

[0016] However, the various yet significant advantages and effects of the present invention are not limited to the above, and can be more easily understood in the course of describing specific embodiments of the present invention. [Brief explanation of the drawings]

[0017] [Figure 1] 1 is a schematic perspective view of a multilayer electronic component according to an embodiment of the present invention; [Figure 2] 2 is a schematic cross-sectional view taken along line II' of FIG. 1. [Figure 3] 2 is a schematic cross-sectional view taken along line II-II' in FIG. 1. [Figure 4] 1 is an exploded perspective view schematically illustrating a main body in which dielectric layers and internal electrodes are stacked according to an embodiment of the present invention; [Figure 5] 3 is an enlarged view of the P1 region of FIG. 2. [Figure 6] 1 is a photograph of a cross section of Test No. 1 during sintering, taken with a scanning electron microscope (SEM). [Figure 7] 1 is a photograph of a cross section of Test No. 7 during sintering, taken with a scanning electron microscope (SEM). DETAILED DESCRIPTION OF THE INVENTION

[0018] Hereinafter, embodiments of the present invention will be described with reference to specific embodiments and the accompanying drawings. However, the embodiments of the present invention may be modified into several other forms, and the scope of the present invention is not limited to the embodiments described below. Furthermore, the embodiments of the present invention are provided to more completely explain the present invention to those skilled in the art. Therefore, the shapes and sizes of elements in the drawings may be enlarged or reduced (or highlighted or simplified) for clearer explanation, and elements denoted by the same reference numerals in the drawings are the same elements.

[0019] In the drawings, parts not relevant to the description are omitted to clearly explain the present invention, and thicknesses are exaggerated to clearly depict multiple layers and regions, and components having the same function within the same concept may be described using the same reference numerals. Furthermore, throughout the specification, the term "comprise" a certain component does not exclude other components, but means that the component may further include other components, unless otherwise specified.

[0020] In the drawings, the X direction can be defined as the second direction, L direction or length direction, the Y direction can be defined as the third direction, W direction or width direction, and the Z direction can be defined as the first direction, stacking direction, T direction or thickness direction.

[0021] Multilayer electronic components FIG. 1 is a schematic perspective view of a multilayer electronic component according to one embodiment of the present invention, FIG. 2 is a schematic cross-sectional view taken along line II' in FIG. 1, FIG. 3 is a schematic cross-sectional view taken along line II-II' in FIG. 1, and FIG. 4 is an exploded perspective view showing a main body in which dielectric layers and internal electrodes are laminated according to one embodiment of the present invention.

[0022] A multilayer electronic component according to one embodiment of the present invention will be described in detail below with reference to FIGS.

[0023] A multilayer electronic component 100 according to one embodiment of the present invention includes a main body 110 including dielectric layers 111 and internal electrodes 121, 122 arranged alternately with the dielectric layers, and external electrodes 131, 132 arranged on the main body and connected to the internal electrodes, the internal electrodes including Ni, Ba, Ti, O, and Tb, and the Tb content relative to the total content of the Ni, Ba, Ti, O, and Tb is 0.45 to 3.0 wt%.

[0024] The body 110 is formed by alternately laminating dielectric layers 111 and internal electrodes 121 and 122 .

[0025] Although there is no particular limitation on the specific shape of the body 110, as shown in the drawing, the body 110 may have a hexahedral shape or a similar shape. Due to shrinkage of the ceramic powder contained in the body 110 during the firing process, the body 110 may have a substantially hexahedral shape, although not a hexahedral shape with perfectly straight lines.

[0026] The main body 110 may have first and second surfaces 1, 2 facing each other in the thickness direction (Z direction), third and fourth surfaces 3, 4 connected to the first and second surfaces 1, 2 and facing each other in the width direction (Y direction), and fifth and sixth surfaces 5, 6 connected to the first and second surfaces 1, 2, connected to the third and fourth surfaces 3, 4, and facing each other in the length direction (X direction).

[0027] The plurality of dielectric layers 111 forming the body 110 are in a fired state, and the boundaries between adjacent dielectric layers 111 can be integrated to the extent that they are difficult to see without using a scanning electron microscope (SEM).

[0028] According to an embodiment of the present invention, the raw material for forming the dielectric layer 111 is not particularly limited as long as it can obtain a sufficient capacitance. For example, a barium titanate-based material, a lead complex perovskite-based material, or a strontium titanate-based material can be used. The barium titanate-based material can include a BaTiO3-based ceramic powder, and the ceramic powder can be, for example, BaTiO3, BaTiO3 partially solid-dissolved with Ca (calcium), Zr (zirconium), or the like (BaTiO3). 1-x Ca x )TiO3, Ba(Ti 1-y Ca y )O3, (Ba 1-x Ca x )(Ti 1-y Zr y )O3 or Ba(Ti 1-y Zr y )O3 and the like.

[0029] The material forming the dielectric layer 111 may be a powder such as barium titanate (BaTiO3), to which various ceramic additives, organic solvents, plasticizers, binders, dispersants, etc. may be added according to the purpose of the present invention.

[0030] On the other hand, the thickness td of the dielectric layer 111 does not need to be particularly limited.

[0031] However, when the dielectric layer is generally formed to a thickness of less than 0.6 μm, particularly when the thickness of the dielectric layer is 0.41 μm or less, there is a risk of the reliability decreasing.

[0032] As will be described later, according to one embodiment of the present invention, even when the dielectric layers and internal electrodes are very thin, the initial sintering of the internal electrodes can be effectively delayed to improve reliability, and therefore sufficient reliability can be ensured even when the thickness of the dielectric layer is 0.41 μm or less.

[0033] That is, when the thickness of the dielectric layer 111 is 0.41 μm or less, the effect of improving reliability according to the present invention can be more pronounced.

[0034] The thickness td of the dielectric layer 111 may refer to the average thickness of the dielectric layer 111 disposed between the first and second internal electrodes 121 and 122.

[0035] The average thickness of the dielectric layer 111 can be measured by scanning an image of a cross section of the body 110 in the length and thickness direction (LT) using a scanning electron microscope (SEM).

[0036] For example, the thickness of any dielectric layer extracted from an image obtained by scanning a cross section of the body 110 in the length and thickness direction (LT) cut at the center of the width direction using a scanning electron microscope (SEM) can be measured at 30 equally spaced points in the length direction, and the average value can be calculated.

[0037] The thickness measured at the 30 equally spaced points may be measured at a capacitance forming portion A, which means a region where the first and second internal electrodes 121 and 122 overlap each other.

[0038] The main body 110 may include a capacitance forming portion A that is disposed inside the main body 110 and includes a first internal electrode 121 and a second internal electrode 122 that are disposed opposite each other with a dielectric layer 111 sandwiched therebetween to form a capacitance, and cover portions 112 and 113 that are formed on the upper and lower parts of the capacitance forming portion A.

[0039] The capacitance forming portion A is a portion that contributes to forming the capacitance of the capacitor, and can be formed by repeatedly laminating a plurality of first and second internal electrodes 121, 122 with the dielectric layer 111 sandwiched therebetween.

[0040] The upper cover part 112 and the lower cover part 113 may be formed by stacking a single dielectric layer or two or more dielectric layers in the thickness direction on the upper and lower surfaces of the capacitance forming part A, respectively, and can basically play a role in preventing damage to the internal electrodes due to physical or chemical stress.

[0041] The upper cover part 112 and the lower cover part 113 do not include an internal electrode and may include the same material as the dielectric layer 111 .

[0042] That is, the upper cover part 112 and the lower cover part 113 may include a ceramic material, for example, a barium titanate (BaTiO3) based ceramic material.

[0043] On the other hand, there is no need to particularly limit the thickness of the cover portions 112 and 113. However, in order to more easily achieve miniaturization and high capacity of the multilayer electronic component, the thickness tp of the cover portions 112 and 113 can be 20 μm or less.

[0044] Moreover, margin portions 114 and 115 can be arranged on the side surfaces of the capacitance forming portion A.

[0045] The margin portions 114, 115 may include a margin portion 114 disposed on the sixth surface 6 of the body 110 and a margin portion 115 disposed on the fifth surface 5. That is, the margin portions 114, 115 may be disposed on both side surfaces of the ceramic body 110 in the width direction.

[0046] The margin portions 114 and 115 may refer to the regions between the ends of the first and second internal electrodes 121 and 122 and the boundary surface of the body 110 in a cross section of the body 110 cut in the width-thickness (WT) direction, as shown in FIG. 3.

[0047] The margin portions 114 and 115 basically serve to prevent damage to the internal electrodes due to physical or chemical stress.

[0048] The margin portions 114 and 115 may be formed by applying a conductive paste to the ceramic green sheet except for the areas where the margin portions are to be formed, and forming internal electrodes.

[0049] In addition, in order to suppress the steps caused by the internal electrodes 121, 122, the laminated internal electrodes can be cut so that they are exposed on the fifth and sixth surfaces 5, 6 of the main body, and then a single dielectric layer or two or more dielectric layers can be laminated in the width direction on both side surfaces of the capacitance forming portion A to form margin portions 114, 115.

[0050] The internal electrodes 121 and 122 are stacked alternately with the dielectric layers 111 .

[0051] The internal electrodes 121, 122 may include first and second internal electrodes 121, 122. The first and second internal electrodes 121, 122 are alternately arranged to face each other with the dielectric layer 111 constituting the body 110 sandwiched therebetween, and may be exposed to the third and fourth surfaces 3, 4 of the body 110, respectively.

[0052] Referring to FIG. 2, the first internal electrode 121 may be spaced apart from the fourth surface 4 and exposed through the third surface 3, and the second internal electrode 122 may be spaced apart from the third surface 3 and exposed through the fourth surface 4.

[0053] At this time, the first and second internal electrodes 121 and 122 may be electrically isolated from each other by the dielectric layer 111 disposed therebetween.

[0054] Referring to FIG. 4, the body 110 may be formed by alternately stacking ceramic green sheets on which the first internal electrodes 121 are printed and ceramic green sheets on which the second internal electrodes 122 are printed, and then firing the stacked ceramic green sheets.

[0055] The internal electrodes 121 and 122 of the present invention contain Ni, Ba, Ti, O, and Tb, and the content of Tb (Terbium) relative to the total content of Ni, Ba, Ti, O, and Tb may be 0.45 to 3.0 wt%, thereby delaying the initial sintering of the internal electrodes, reducing sintering mismatch between the internal electrodes and the dielectric layers, improving the connectivity of the internal electrodes, and reducing thickness deviation of the internal electrodes.

[0056] In addition, during firing, Tb in the internal electrodes migrates (squeezes out) to the dielectric layer and is selectively substituted into the A-site or B-site of BaTiO3 in the dielectric layer, suppressing oxygen vacancies and improving reliability.

[0057] It is generally known that adding rare earth elements to dielectrics stabilizes the temperature dependence of the dielectric constant (TCC), reduces dielectric loss (DF), and increases product lifetime. It is also known that the electrical properties of dielectrics vary depending on the type and content of rare earth elements.

[0058] When rare earth ions with a medium ionic radius are added to BaTiO3 (BT), both substitutions (A site, B site) are possible. If thermal energy and an appropriate time for the elements to move are given, they will selectively enter the A or B site, achieving a balance between acceptors and donors, thereby improving the electrical properties and reliability of the capacitor.

[0059] Rare earth elements have a smaller ionic radius than Ba2+, so they are more likely to substitute for the A site. However, compared to other rare earth elements with 3+ ions, Terbium has both 3+ and 4+ ions, so even when substituted for the B site (Ti4+), there is no shortage of electrons, which is more advantageous in terms of balancing acceptors and donors.

[0060] Unlike conventional methods, the present invention adds Tb to the internal electrodes to delay the initial sintering of the internal electrodes, reduce the sintering mismatch between the internal electrodes and the dielectric layers, improve the connectivity of the internal electrodes, and reduce thickness deviation of the internal electrodes. Additionally, the Tb in the internal electrodes migrates (squeezes out) to the dielectric layers during sintering and is selectively substituted into the A-site or B-site of BaTiO3 in the dielectric layers to suppress oxygen vacancies.

[0061] If the Tb content in the internal electrodes after firing is less than 0.45 wt% of the total content of Ni, Ba, Ti, O, and Tb, the effect of delaying the initial sintering of the internal electrodes is insufficient, and the connectivity of the internal electrodes may be reduced, resulting in a large thickness deviation of the internal electrodes.

[0062] On the other hand, if the Tb content in the internal electrodes exceeds 3.0 wt% based on the total content of Ni, Ba, Ti, O, and Tb, the connectivity of the internal electrodes may be reduced, and the thickness deviation of the internal electrodes may increase.

[0063] According to an embodiment of the present invention, the internal electrodes 121 and 122 may have an internal electrode connectivity of 85% or more.

[0064] The connectivity of the internal electrodes may be defined as the ratio of the length of the portion where the internal electrodes are actually formed to the entire length of the internal electrodes.

[0065] For example, as shown in FIG. 5, if the overall electrode length measured at any one point of the internal electrode 121 is defined as b, and the lengths of the portions where the electrodes are actually formed are defined as e1, e2, e3, and e4, respectively, the connectivity of the internal electrodes can be expressed as e / b, which is the value obtained by dividing the total length of the portions where the electrodes are actually formed (e=e1+e2+e3+e4) by the overall electrode length b.

[0066] If the connectivity of the internal electrodes is less than 85%, it may be difficult to ensure sufficient capacitance.

[0067] According to an embodiment of the present invention, the internal electrode to which Tb is added at a certain ratio can delay the initial sintering, reduce the sintering mismatch between the internal electrode and the dielectric layer, and ensure the connectivity of the internal electrode to be 85% or more.

[0068] There is no need to particularly limit the upper limit of the connectivity of the internal electrodes, but in consideration of the manufacturing process, the upper limit may be 97%.

[0069] Furthermore, the internal electrodes 121 and 122 may have a thickness deviation of 18% or less.

[0070] According to an embodiment of the present invention, the internal electrode to which Tb is added at a certain ratio can delay the initial sintering, reduce the sintering mismatch between the internal electrode and the dielectric layer, and ensure a thickness deviation of 18% or less.

[0071] Here, the thickness deviation may refer to the CV value of the thickness of the internal electrode. That is, if the average thickness of the internal electrode is x1 and the standard deviation of the thickness of the internal electrode is s1, the thickness deviation may be s1 / x1*100(%).

[0072] In one embodiment, the dielectric layer 111 can contain Tb. Since Tb in the internal electrodes 121 and 122 migrates to the dielectric layer 111 during firing, the dielectric layer 111 can contain Tb even if the dielectric composition does not contain Tb.

[0073] The internal electrodes 121, 122 may be formed using a conductive paste for internal electrodes containing Tb oxide and Ni, and the weight ratio of Tb oxide to Ni may be 1.5 to 10.0 wt %. Thus, after the internal electrodes are sintered, the Tb content of the internal electrodes 121, 122 with respect to the total content of Ni, Ba, Ti, O, and Tb may be 0.45 to 3.0 wt %.

[0074] In this case, the Tb oxide may be one or more of Tb4O7 and Tb2O3.

[0075] However, in order to more effectively improve the connectivity of the internal electrodes and reduce the thickness deviation of the internal electrodes at the same content, the Tb oxide may be Tb4O7.

[0076] On the other hand, the thickness te of the internal electrodes 121 and 122 does not need to be particularly limited.

[0077] However, in general, when the internal electrodes 121, 122 are formed to a thickness of less than 0.6 μm, and particularly when the thickness of the internal electrodes 121, 122 is 0.41 μm or less, there is a risk of the reliability decreasing.

[0078] As described above, according to one embodiment of the present invention, even when the dielectric layers and internal electrodes are very thin, the initial sintering of the internal electrodes can be effectively delayed and reliability can be improved, so that sufficient reliability can be ensured even when the thickness of the internal electrodes 121, 122 is 0.41 μm or less.

[0079] Therefore, when the thickness of the internal electrodes 121, 122 is 0.41 μm or less, the effect of improving reliability according to the present invention becomes more pronounced, and miniaturization and high capacitance of the capacitor component can be more easily achieved.

[0080] The thickness te of the internal electrodes 121 and 122 may refer to the average thickness of the internal electrodes 121 and 122.

[0081] The average thickness of the internal electrodes 121 and 122 can be measured by scanning an image of a cross section of the body 110 in the length and thickness direction (LT) using a scanning electron microscope (SEM).

[0082] For example, the thickness of any first and second internal electrodes 121 and 122 may be measured at 30 points equally spaced along the length of the first and second internal electrodes 121 and 122 extracted from an image obtained by scanning a cross section of the body 110 in the length and thickness direction (LT) cut at the center of the width (W) direction using a scanning electron microscope (SEM), and the average value may be calculated.

[0083] The external electrodes 131 and 132 are disposed on the body 110 and connected to the internal electrodes 121 and 122 .

[0084] As shown in FIG. 2, the first and second external electrodes 131 and 132 may be disposed on the third and fourth surfaces 3 and 4 of the body 110, respectively, and connected to the first and second internal electrodes 121 and 122, respectively.

[0085] In this embodiment, the multilayer electronic component 100 has a structure including two external electrodes 131 and 132, but the number and shape of the external electrodes 131 and 132 may vary depending on the shape of the internal electrodes 121 and 122 and other purposes.

[0086] Meanwhile, the external electrodes 131 and 132 may be formed using any electrically conductive material such as a metal, and the specific material may be determined taking into consideration electrical properties and structural stability, and may further have a multi-layer structure.

[0087] For example, the external electrodes 131 and 132 may include electrode layers 131a and 132a disposed on the main body 110 and plating layers 131b and 132b formed on the electrode layers 131a and 132a.

[0088] As a specific example of the electrode layers 131a and 132a, the electrode layers 131a and 132a may be fired electrodes containing a conductive metal and glass, or resin-based electrodes containing a conductive metal and resin.

[0089] The electrode layers 131a and 132a may be formed by sequentially forming a fired electrode and a resin-based electrode on the main body, and may be formed by transferring a sheet containing a conductive metal onto the main body, or by transferring a sheet containing a conductive metal onto a fired electrode.

[0090] The conductive metal contained in the electrode layers 131a and 132a may be any material with excellent electrical conductivity, but is not particularly limited thereto. For example, the conductive metal may be one or more of nickel (Ni), copper (Cu), and alloys thereof.

[0091] The plating layers 131b and 132b serve to improve mounting characteristics. The type of the plating layers 131b and 132b is not particularly limited, and may be a plating layer containing one or more of Ni, Sn, Pd, and alloys thereof, and may be formed of multiple layers.

[0092] Specific examples of the plating layers 131b and 132b include Ni plating layers or Sn plating layers, Ni plating layers and Sn plating layers sequentially formed on the electrode layers 131a and 132a, and Sn plating layers, Ni plating layers and Sn plating layers sequentially formed on the electrode layers 131a and 132a. The plating layers 131b and 132b may also include multiple Ni plating layers and / or multiple Sn plating layers.

[0093] The size of the multilayer electronic component 100 does not need to be particularly limited.

[0094] However, in order to simultaneously achieve miniaturization and high capacity, it is necessary to reduce the thickness of the dielectric layers and internal electrodes and increase the number of layers. Therefore, the effect of improving reliability and insulation resistance according to the present invention can be more pronounced in multilayer electronic components having a size of 0402 (length x width, 0.4 mm x 0.2 mm) or less.

[0095] Therefore, taking into consideration manufacturing errors, external electrode sizes, etc., the effect of improving reliability according to the present invention can be more pronounced when the length of the multilayer electronic component is 0.44 mm or less and the width is 0.22 mm or less.

[0096] A method for manufacturing the multilayer electronic component 100 according to one embodiment of the present invention will now be described.

[0097] First, a plurality of ceramic green sheets are prepared.

[0098] The ceramic green sheet is used to form the dielectric layer 111 of the body 110, and can be made into a sheet having a predetermined thickness by mixing ceramic powder, a polymer, and a solvent to prepare a slurry, and then using a method such as a doctor blade to form the slurry.

[0099] Thereafter, a conductive paste for an internal electrode is printed to a predetermined thickness on at least one surface of each of the ceramic green sheets to form an internal electrode.

[0100] The conductive paste for the internal electrodes may contain Tb oxide and Ni, and the weight ratio of Tb oxide to Ni may be 1.5 to 10.0 wt %. Thus, after the internal electrodes are sintered, the Tb content of the internal electrodes 121, 122 may be 0.45 to 3.0 wt % with respect to the total content of Ni, Ba, Ti, O, and Tb.

[0101] In this case, the Tb oxide may be one or more of Tb4O7 and Tb2O3.

[0102] However, in order to more effectively improve the connectivity of the internal electrodes and reduce the thickness deviation of the internal electrodes at the same content, the Tb oxide may be Tb4O7.

[0103] The conductive paste for the internal electrodes can be printed by screen printing, gravure printing, or the like.

[0104] Referring to FIG. 4, ceramic green sheets on which first internal electrodes 121 are printed and ceramic green sheets on which second internal electrodes 122 are printed are alternately stacked, and pressure is applied in the stacking direction to compress the stacked ceramic green sheets and the internal electrodes formed on the ceramic green sheets to each other, thereby forming a laminate.

[0105] Moreover, cover portions 112 and 113 can be formed by laminating at least one ceramic green sheet above and below the laminate.

[0106] The cover parts 112 and 113 may be made of the same composition as the dielectric layer 111 located inside the laminate, but differ from the dielectric layer 111 in that they do not include internal electrodes.

[0107] Thereafter, the laminate is cut into chips each corresponding to a capacitor, and then the chips are fired at a high temperature to complete the body 110.

[0108] Thereafter, first and second external electrodes 131 and 132 may be formed to cover the exposed portions of the first and second internal electrodes exposed on both sides of the body 110 and to be electrically connected to the first and second internal electrodes.

[0109] At this time, the surfaces of the first and second external electrodes 131, 132 may be plated with nickel, tin, or the like, as needed.

[0110] (Example) The following Table 1 shows sample chips including internal electrodes formed using a conductive paste for internal electrodes in which Tb oxide was added to Ni at a certain ratio. Then, the relative values ​​of capacitance and initial failures were measured based on Test No. 1, which had no Tb added, and the MTTF, internal electrode connectivity, thickness deviation, and Tb content of each sample chip were measured and listed in Table 1 below.

[0111] For the high temperature load reliability, a high temperature load test was carried out on 400 samples for each test number under conditions of 125°C and 8V, and initial defects and MTTF (Mean Time To Failure) were measured.

[0112] The initial failure rate was determined by determining the number of samples whose insulation resistance was 10 kΩ or less within the first 12 hours as initial failures, and the number of initial failures for test number 1 was set to 1.0, with relative values ​​being recorded.

[0113] The MTTF was defined as the time until the insulation resistance fell below 10KΩ.

[0114] The electrode connectivity was measured by scanning the image of a cross section (LT cross section) cut at the center of the width (W) direction of the body using a scanning electron microscope (SEM), measuring the length of the part where the internal electrodes were actually formed relative to the total length of all the internal electrodes, and calculating the electrode connectivity for each internal electrode, and then recording the average value.

[0115] The electrode thickness deviation was calculated as s1 / x1*100(%), where x1 is the average thickness of the internal electrodes and s1 is the standard deviation of the thickness of the internal electrodes.

[0116] For the Tb content after sintering, a thinned sample was prepared using FIB equipment at a point halfway along the L direction (X direction) of the sintered sample chip. Five samples were measured for each of the three internal electrodes located halfway along the T direction (Z direction) of the prepared thinned sample, within a 5 nm area inside the dielectric interface in the T direction (Z direction) of each internal electrode. Measurements were performed using STEM equipment, and the Ni, Ba, Ti, O, and Tb content were quantitatively analyzed using EDX.

[0117] Of the total amount of the five elements (100 wt%), the wt% of Tb was expressed as the Tb content after firing.

[0118] [Table 1]

[0119] In the case of test numbers 1, 2, 9 and 10, in which the Tb content in the internal electrode after firing was less than 0.45 wt% or more than 3.0 wt%, it was confirmed that the electrode connectivity was low and the electrode thickness deviation was large.

[0120] On the other hand, in the case of test numbers 3 to 8, in which the Tb content in the internal electrodes after firing was 0.45 wt% to 3.0 wt%, it was confirmed that the electrode connectivity was high and the electrode thickness deviation was small.

[0121] It can also be seen that test numbers 3 to 8 have better capacity than test numbers 1, 2, 9 and 10, have lower initial defects and have a longer MTTF.

[0122] Figure 6 is a photograph taken with a scanning electron microscope (SEM) of a cross section of Test No. 1 during sintering. Figure 7 is a photograph taken with a scanning electron microscope (SEM) of a cross section of Test No. 7 during sintering.

[0123] A thinned sample was prepared using FIB equipment at a point halfway along the L direction (X direction) of a multilayer electronic component while the internal electrodes were being sintered. When the central regions of the T direction (Z direction) and W direction (Y direction) were observed with a scanning electron microscope, comparing Figures 6 and 7, it was confirmed that in Test No. 7, where Tb was added, sintering between Ni particles did not progress as much compared to Test No. 1, delaying Ni necking.

[0124] Table 2 below shows sample chips including internal electrodes formed using a conductive paste for internal electrodes in which Tb4O7, Tb2O3, Dy2O3, and Yb2O3 powders were added to Ni in a certain ratio. Then, the relative values ​​of the capacity and initial failure rate were measured based on Test No. 1 in Table 1 in which Tb was not added. The MTTF, internal electrode connectivity, thickness deviation, and Tb content of each sample chip were also measured and listed in Table 2 below.

[0125] [Table 2]

[0126] It can be seen that test numbers 11 and 12, in which Tb4O7 or Tb2O3 was added, had higher electrode connectivity and smaller electrode thickness deviation than test numbers 13 and 14, in which other rare earth elements were added.

[0127] It can also be seen that test numbers 11 and 12 have better capacity than test numbers 13 and 14, lower initial failure rates, and longer MTTF.

[0128] Although the embodiments of the present invention have been described in detail above, the present invention is not limited to the above-described embodiments and the accompanying drawings, but is limited by the scope of the accompanying claims. Therefore, various substitutions, modifications, and changes may be made by a person skilled in the art without departing from the technical spirit of the present invention as set forth in the claims, and these also fall within the scope of the present invention. [Explanation of symbols]

[0129] 100 Multilayer electronic components 110 Main Unit 111 Dielectric layer 112, 113 Cover 114, 115 Margin 121, 122 Internal electrode 131, 132 External electrode 131a Electrode layer 132b plating layer

Claims

1. a body including dielectric layers and internal electrodes alternating with the dielectric layers; an outer electrode disposed on the body and connected to the inner electrode, The internal electrodes contain Ni, Ba, Ti, O, and Tb, and the content of Tb relative to the total content of Ni, Ba, Ti, O, and Tb is 0.45 to 3.0 wt %.

2. The internal electrode is 2. The multilayer electronic component according to claim 1, wherein the connectivity of the internal electrodes is defined as the ratio of the actual length of the internal electrodes to the total length of the internal electrodes, and the connectivity of the internal electrodes is 85% or more.

3. 3. The multilayer electronic component according to claim 1, wherein the internal electrodes have a thickness deviation of 18% or less.

4. The multilayer electronic component according to claim 1 , wherein the dielectric layer contains Tb.

5. 5. The multilayer electronic component according to claim 1, wherein the internal electrodes are formed using a conductive paste for internal electrodes containing Tb oxide and Ni, and a weight ratio of the Tb oxide to the Ni is 1.5 to 10.0 wt %.

6. The Tb oxide is Tb ４ O ７ and Tb ２ O ３ The multilayer electronic component according to claim 5 , wherein the multilayer electronic component is one or more of the following:

7. The Tb oxide is Tb ４ O ７ The multilayer electronic component according to claim 5, wherein

8. 8. The multilayer electronic component according to claim 1, wherein the internal electrodes have an average thickness of 0.41 μm or less.

9. 9. The multilayer electronic component according to claim 1, wherein the dielectric layers have an average thickness of 0.41 μm or less.

10. 10. The multilayer electronic component according to claim 1, wherein the length of the multilayer electronic component is 0.44 mm or less and the width of the multilayer electronic component is 0.22 mm or less.

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