electronic machinery

Abstract

To provide an electronic device which can precisely recognize features of a face of a user.SOLUTION: A spectacle type electronic device comprises a first optical member, a second optical member, a frame, an imaging device, a feature extracting unit, and a feeling estimating unit. The frame is provided so as to be in contact with a side surface of the first optical member and a side surface of the second optical member. The imaging device is provided so as to be in contact with the frame and has a function of detecting a part of a face of a user of the spectacle type electronic device. The feature extracting unit has a function of extracting features of the face of the user from the detected part of the face of the user. The feeling estimating unit has a function of estimating information relating to the user from the extracted features.SELECTED DRAWING: Figure 1

Description

[Technical Field]

[0001] One aspect of the present invention relates to an eyeglass-type electronic device.

[0002] Note that one embodiment of the present invention is not limited to the above technical fields. The technical field of one embodiment of the present invention is a semiconductor device, a display device, a light-emitting device, a power storage device, a memory device, Electronic device, lighting device, input device, input / output device, driving method thereof, or manufacturing method thereof For example, a semiconductor device functions by utilizing the semiconductor properties. This refers to all devices that can be used. [Background technology]

[0003] There is a known technology for recognizing facial expressions from captured images of faces. This technology automatically captures images the moment the subject smiles or looks towards the camera. Facial expression recognition is being applied to

[0004] As an example of facial expression recognition technology, Patent Document 1 describes a technology that detects facial feature points and performs facial recognition based on the feature points. A technology for highly accurate facial expression recognition has been disclosed. [Prior art documents] [Patent documents]

[0005] [Patent Document 1] Japanese Patent Application Laid-Open No. 2007-087346 Summary of the Invention [Problem to be solved by the invention]

[0006] Facial recognition can be performed, for example, by shining infrared light onto the face and detecting the reflected infrared light. Here, a light source that emits infrared light or the like and a sensor that detects reflected infrared light or the like detects a face, Especially if it is far from the eyes, it may not be possible to accurately recognize facial expressions.

[0007] One aspect of the present invention provides an electronic device that can accurately recognize the facial features of a user. Another object of the present invention is to accurately estimate the emotion of a user. Another object of the present invention is to provide an electronic device that can reduce user fatigue. It is an object of the present invention to provide an electronic device that can accurately estimate fatigue level. An object of one embodiment of the present invention is to provide a novel electronic device.

[0008] Another object of one embodiment of the present invention is to provide an electronic device including a display device with a large number of pixels. Another embodiment of the present invention is to provide an electronic device having a high-definition display device. Another object of one embodiment of the present invention is to provide a display device that can display a high-definition image. Another object of the present invention is to provide an electronic device including a display device that can The object is to provide an electronic device having a display device capable of displaying high-quality images. Another embodiment of the present invention is a display device that can display highly realistic images. Another object of the present invention is to provide an electronic device including a high brightness display device. One of the objectives of the present invention is to provide an electronic device having a display device capable of displaying an image of various sizes. Another embodiment of the present invention is to provide an electronic device having a display device with a narrow frame. Another object of one embodiment of the present invention is to provide an electronic device having a small display device. Another object of one embodiment of the present invention is to provide a display device that operates at high speed. Another object of the present invention is to provide a sub-device. Another object of the present invention is to provide an electronic device having a low-cost Another object of the present invention is to provide an electronic device having a high-quality display device. An object of the present invention is to provide an electronic device having a highly reliable display device. An object of one embodiment of the present invention is to provide an electronic device including a novel display device.

[0009] Another object of one embodiment of the present invention is to provide a novel display device. An object of one embodiment of the present invention is to provide a novel imaging device.

[0010] The description of these problems does not preclude the existence of other problems. It is not necessary for the present invention to solve all of these problems. can be extracted from the description, drawings, claims, etc. [Means for solving the problem]

[0011] One aspect of the present invention is a camera comprising a first optical member, a second optical member, a frame, an imaging device, and, in particular, The frame includes a side surface of the first optical member and a side surface of the second optical member. the imaging device is provided in contact with the frame; The imaging device has a function of detecting a part of the user's face, and the feature extraction unit The emotion estimation unit has a function of extracting facial features of the user from a part of the face, and the emotion estimation unit estimates the extracted features. The glasses-type electronic device has the function of estimating information about the user from the images.

[0012] Alternatively, in the above aspect, the information may be the user's fatigue level or emotions.

[0013] Alternatively, in the above aspect, a display device is provided, and the display device displays an image corresponding to the information. Good too.

[0014] Alternatively, in the above aspect, the display device has a light-emitting element, and the light-emitting element is an organic EL element. It is also possible.

[0015] Alternatively, in the above aspect, the display device includes a transistor, and the transistor has a channel. The forming region may have a metal oxide.

[0016] Another aspect of the present invention is an imaging device including a first optical member, a second optical member, a frame, and and a display device, and the imaging device is a photoelectric converter having a function of detecting the amount of light received. The frame has a switching element and is in contact with a side surface of the first optical member and a side surface of the second optical member. The imaging device is provided in contact with the frame, and the display device is provided on the first layer. The first layer is a gate driver circuit and a source driver circuit. a driver circuit, the second layer having a pixel array in which pixels are arranged in a matrix, The gate driver circuit and the source driver circuit have an area overlapping with the pixel, and The driver circuit is an eyeglass-type electronic device having an area overlapping with the source driver circuit.

[0017] Alternatively, in the above aspect, the display device includes a DA conversion circuit, and the DA conversion circuit is a potential generation circuit. a pass transistor logic circuit, and the potential generating circuit includes a source driver circuit. The pass transistor logic circuit is provided outside the source driver circuit. The potential generating circuit has a function of generating a plurality of potentials having different magnitudes, and The register logic circuit receives the image data and, based on the digital value of the image data, The potential generating circuit may have a function of outputting any of the potentials generated by the potential generating circuit.

[0018] Alternatively, in the above aspect, the pixel has a light-emitting element, and the light-emitting element is an organic EL element. Good too.

[0019] Alternatively, in the above aspect, the pixel includes a transistor, and the transistor includes a channel forming The region may have a metal oxide. [Effects of the Invention]

[0020] According to one aspect of the present invention, an electronic device capable of accurately recognizing the facial features of a user is provided. Alternatively, according to one aspect of the present invention, it is possible to accurately estimate the user's emotion. According to one embodiment of the present invention, it is possible to provide an electronic device that can It is possible to provide an electronic device that can accurately estimate the This makes it possible to provide a novel electronic device.

[0021] According to one embodiment of the present invention, an electronic device including a display device with a large number of pixels can be provided. According to one embodiment of the present invention, an electronic device having a high-definition display device can be provided. According to one embodiment of the present invention, a high-definition image can be displayed. According to one embodiment of the present invention, an electronic device having a display device can be provided. It is possible to provide an electronic device having a display device capable of displaying an image of a certain size. According to one embodiment of the present invention, a display device capable of displaying highly realistic images is provided. According to one embodiment of the present invention, an electronic device that displays a high-brightness image can be provided. It is also possible to provide an electronic device having a display device that can display the image. In this way, it is possible to provide an electronic device having a display device with a narrow frame. According to one embodiment of the present invention, an electronic device having a small display device can be provided. According to one embodiment of the present invention, an electronic device including a display device that operates at high speed can be provided. According to one embodiment of the present invention, an electronic device including a display device with low power consumption can be provided. According to one embodiment of the present invention, an electronic device including a low-cost display device can be provided. According to one embodiment of the present invention, an electronic device including a highly reliable display device can be provided. According to one embodiment of the present invention, an electronic device having a novel display device can be provided. Equipment can be provided.

[0022] According to one embodiment of the present invention, a novel display device can be provided. According to one aspect, a novel imaging device can be provided.

[0023] The description of these effects does not preclude the existence of other effects. The embodiment does not necessarily have to have all of these effects. It can be extracted from descriptions in the specification, drawings, claims, etc. [Brief explanation of the drawings]

[0024] [Figure 1] 1A and 1B are diagrams showing configuration examples of electronic devices. [Figure 2] 2A and 2B are diagrams showing configuration examples of electronic devices. [Figure 3]3A to 3C are diagrams showing configuration examples of electronic devices. [Figure 4] FIG. 4 is a block diagram showing an example of the configuration of an electronic device. [Figure 5] 5(A) and 5(B) are diagrams showing examples of the configuration of a neural network, and Fig. 5(C) is a graph showing emotion estimation. [Figure 6] Fig. 6(A) is a diagram showing an example of how an electronic device is used, and Fig. 6(B) is a diagram showing an example of the field of view of a user of the electronic device. [Figure 7] FIG. 7 is a block diagram showing an example of the configuration of an electronic device. [Figure 8] FIG. 8 is a block diagram showing an example of the configuration of a display device. [Figure 9] FIG. 9 is a block diagram showing an example of the configuration of a display device. [Figure 10] FIG. 10 is a block diagram showing an example of the configuration of a display device. [Figure 11] FIG. 11 is a block diagram showing an example of the configuration of a display device. [Figure 12] FIG. 12 is a block diagram showing an example of the configuration of a display device. [Figure 13] FIG. 13 is a block diagram showing an example of the configuration of a display device. [Figure 14] FIG. 14 is a block diagram showing an example of the configuration of a display device. [Figure 15] FIG. 15 is a block diagram showing an example of the configuration of a display device. [Figure 16] FIG. 16 is a circuit diagram showing an example of the configuration of a DA conversion circuit. [Figure 17] FIG. 17 is a block diagram showing an example of the configuration of a shift register. [Figure 18] 18A is a block diagram showing an example of the configuration of a shift register, and FIG. 18B is a circuit diagram showing an example of the configuration of a shift register. [Figure 19] FIG. 19 is a schematic diagram showing an example of the layout of gate driver circuits and source driver circuits. [Figure 20]FIG. 20 is a top view showing a configuration example of a gate driver circuit and a source driver circuit. [Figure 21] 21A to 21G are diagrams showing examples of pixel configurations. [Figure 22] 22(A) and 22(B) are circuit diagrams showing examples of pixel configurations. [Figure 23] Fig. 23(A) is a circuit diagram showing an example of the configuration of a pixel, and Fig. 23(B) is a timing chart showing an example of the operation method of the pixel. [Figure 24] 24A to 24E are circuit diagrams showing examples of pixel configurations. [Figure 25] FIG. 25 is a block diagram showing an example of the configuration of a display device. [Figure 26] FIG. 26 is a diagram illustrating an example of the operation of the display device. [Figure 27] FIG. 27 is a cross-sectional view showing an example of the configuration of a display device. [Figure 28] FIG. 28 is a cross-sectional view showing an example of the configuration of a display device. [Figure 29] FIG. 29 is a cross-sectional view showing an example of the configuration of a display device. [Figure 30] FIG. 30 is a cross-sectional view showing an example of the configuration of a display device. [Figure 31] 31(A) and 31(B) are top views showing examples of pixel configurations. [Figure 32] FIG. 32 is a top view showing an example of the configuration of a pixel. [Figure 33] FIG. 33 is a cross-sectional view showing an example of the configuration of a pixel. [Figure 34] Fig. 34(A) is a schematic diagram showing an example of the configuration of a pixel, and Fig. 34(B) is a top view showing an example of the configuration of a pixel. [Figure 35] 35(A) and 35(B) are top views showing examples of pixel configurations. [Figure 36] FIG. 36 is a top view showing an example of the configuration of a pixel. [Figure 37] FIG. 37 is a top view showing an example of the configuration of a pixel. [Figure 38]FIG. 38 is a cross-sectional view showing an example of the configuration of a pixel. [Figure 39] 39(A) to 39(E) are diagrams showing configuration examples of light-emitting elements. [Figure 40] 40(A) and 40(B) are cross-sectional views showing configuration examples of an imaging device. [Figure 41] 41A is a top view illustrating a structural example of a transistor, and FIGS. 41B and 41C are cross-sectional views illustrating a structural example of a transistor. [Figure 42] 42A is a top view illustrating a structural example of a transistor, and FIGS. 42B and 42C are cross-sectional views illustrating a structural example of a transistor. [Figure 43] 43A is a top view illustrating a structural example of a transistor, and FIGS. 43B and 43C are cross-sectional views illustrating a structural example of a transistor. DETAILED DESCRIPTION OF THE INVENTION

[0025] Hereinafter, embodiments will be described with reference to the drawings. It is possible to implement the present invention in various ways without departing from the spirit and scope of the present invention. It will be readily apparent to those skilled in the art that various modifications may be made to the details of the present invention. However, the present invention should not be construed as being limited to the description of the following embodiments.

[0026] In the configuration of the invention described below, the same parts or parts having similar functions are designated by the same reference numerals. The same reference numerals are used in common among different drawings, and the repeated explanations thereof will be omitted. When referring to a function, the hatch pattern may be the same and no particular symbol may be added.

[0027] In each drawing described in this specification, the size of each component, the thickness of a layer, or the area is not clearly indicated. The figures may be exaggerated for clarity and are not necessarily limited to that scale.

[0028] In this specification, ordinal numbers such as "first" and "second" are used to avoid confusion of components. The number is not a numerical limit.

[0029] In addition, in this specification, words indicating placement such as "above," "below," "to the left," and "to the right" are used. are used for convenience in explaining the positional relationship between the components with reference to the drawings. The positional relationship between the components changes depending on the direction in which each component is depicted. Therefore, the present invention is not limited to the words and phrases described in the specification, but can be rephrased appropriately depending on the situation. .

[0030] A transistor is a type of semiconductor device that controls the amplification of current and voltage, and conduction or non-conduction. In this specification, the transistor is an IG FET(Insulated Gate Field Effect Transist) or) and thin film transistors (TFTs). nothing.

[0031] In this specification and the like, the functions of the source and drain of a transistor are This may be reversed if the polarity of the resistor or the direction of current changes during circuit operation. For this reason, the terms source and drain can be used interchangeably.

[0032] In this specification, "electrically connected" refers to a direct connection and a connection made by some means. This includes cases where the device is connected via "something that has an electrical effect." "Something that has an electrical effect" means something that allows the transmission and reception of electrical signals between connected objects. Therefore, even if it is expressed as "electrically connecting," In real circuits, there may be no physical connections, just wires running along the circuit. In addition, even if it is expressed as a "direct connection," it is not the case that different conductors are connected via contacts. This includes cases where different conductors are connected together. In some cases, the element is a crystalline solid, and in other cases, it contains different elements.

[0033] Unless otherwise specified, in this specification and the like, the off-state current refers to the current that flows when a transistor is in an off-state. The drain current when the device is in the on state (also known as the non-conducting state or cut-off state). , unless otherwise specified, for n-channel transistors, the voltage between the gate and source, V g s is the threshold voltage V th (For p-channel transistors, V th higher than ) state.

[0034] In addition, the terms "electrode" and "wiring" used in this specification and the like do not limit the functionality of these components. For example, an "electrode" may be used as part of a "wiring." Furthermore, the terms "electrode" and "wiring" are used interchangeably to refer to the plural "electrodes" and "wirings." This also includes cases where the "line" is formed as a single unit.

[0035] In this specification, the resistance value of a "resistor" may be determined by the length of the wiring. Or, the resistance value can be determined by connecting a conductor having a different resistivity from the conductor used in the wiring. Alternatively, the resistance value can be determined by doping impurities into the semiconductor. There are cases where this happens.

[0036] In addition, in this specification, a "terminal" in an electric circuit refers to an input or output of a current or voltage. The terminal is the part where power or signals are received or transmitted. It may function as a

[0037] In this specification, metal oxide refers to a metal oxide in a broad sense. Metal oxides are oxides. Metal oxides are oxide insulators and oxide conductors (including transparent oxide conductors). , oxide semiconductors (also referred to as OS), etc. For example, when a metal oxide is used in the active layer of a transistor, the metal oxide In other words, when referring to an OS FET, In other words, a transistor including an oxide or an oxide semiconductor.

[0038] (Embodiment 1) In this embodiment, an electronic device of one embodiment of the present invention will be described with reference to drawings.

[0039] FIG. 1A is a perspective view illustrating a configuration example of an electronic device 10a, which is an electronic device of one embodiment of the present invention. The electronic device 10a is an eyeglass-type electronic device, and includes a pair of display devices 11 (display devices 1 1a, display device 11b), a pair of housings 12 (housing 12a, housing 12b), a pair of optical members 13 (optical member 13a, optical member 13b), a pair of mounting portions 14 (mounting portion 14a, mounting portion 1 4b), a pair of imaging devices 15 (imaging device 15a, imaging device 15b), a pair of display areas 16 (display area 16a, display area 16b), and a pair of nose pads 17 (nose pad 17a, nose pad 1 7b). The electronic device 10a also includes a frame 18 and a camera 19.

[0040] In the electronic device 10a, the display device 11a is located inside the housing 12a, and the display device 11b is located inside the housing 12. The housing 12a can be provided inside the left end side surface of the frame 18, for example. The housing 12b is provided so as to contact, for example, the right end side surface of the frame 18. The housing 12a is provided so as to contact the right end side surface of the frame 18. 12b may be provided so as to contact the left end side surface of the frame 18.

[0041] The mounting portion 14a is in contact with the housing 12a, and the mounting portion 14b is in contact with the housing 12b. The display area 16a can be provided so as to overlap with the optical member 13a. The frame 18 is provided so as to overlap the optical member 16b and the optical member 13b. The optical member 13a and the optical member 13b can be provided so as to be in contact with each other on their respective side surfaces.

[0042] The camera 19 can be provided in contact with the frame 18. For example, the camera 19 , can be mounted on the bridge of the frame 18. In other words, the camera 19 can be mounted on the optical member 13. Alternatively, the camera 19 can be provided between the nose pad 17a and the optical member 13b. It can be provided between the nose pad 17b.

[0043] The display device 11a and the display device 11b have a function of displaying images. The image displayed by the display device 11b can be projected onto the display area 16a. The displayed image can be projected onto the display area 16b. The user can view the image displayed by the display device 11a through the display area 16a. In addition, the image displayed by the display device 11b can be viewed through the display area 16b. It can be recognized.

[0044] The display device 11 preferably has a function of displaying high-definition images. It is preferable that the display has the function of displaying images with a resolution of 2000 ppi or more, and It is more preferable that the display device has a function to display images with a resolution of 5000 ppi or higher. It is more preferable that the electronic device 10a has a function of displaying a high-resolution image. Since the display device is a device, the distance between the user's eyes and the display area 16 is short. When the image displayed by the electronic device 10a does not have high definition, the user of the electronic device 10a may There is a possibility that the image displayed on the display device 16 may appear grainy when viewed. By increasing the definition of the image displayed by the electronic device 10a, the user of the electronic device 10a can feel the graininess. The image displayed in the display area 16 can be viewed without feeling any discomfort. A specific example of the configuration of a display device capable of displaying an image will be described later.

[0045] The display device 11 has pixels. The pixels include sub-pixels that emit red light, for example. a sub-pixel having a function of emitting green light, and a sub-pixel having a function of emitting blue light; The pixels of the display device 11 include sub-pixels that have the function of emitting infrared light. In this case, the image capturing device 15 detects infrared light, and the details will be described later. This allows the electronic device 10a to have a function of detecting the eyes of the user and the surrounding conditions. Cut.

[0046] The optical member 13 has a function of transmitting incident light. The optical member 13 has a function of transmitting visible light. The optical member 13 has a function of refracting incident light, and thus the electronic device The refractive error of the eye of the user of the optical element 10a can be corrected. The optical member 13 may be, for example, a concave lens, a convex lens, a progressive lens, or the like. The optical member 13 may be made of a material such as a plastic lens. It can be made of plastic or glass.

[0047] The optical member 13 does not necessarily have to have the function of refracting incident light. For example, when a person without refractive error uses the electronic device 10a, the user may experience fatigue, headache, etc. This can prevent feelings of nausea and the like.

[0048] The optical member 13 has a light-transmitting property, and the display area 16 is provided, so that the electronic device 10a The user can see the image displayed in the display area 16 superimposed on the transmitted image viewed through the optical member 13. Therefore, the electronic device 10a is an Augmented Reality (AR) The electronic device may be an electronic device capable of displaying a virtual reality image.

[0049] The optical member 13 does not have to be light-transmitting. In this case, The user can only see the image displayed in the display area 16 without seeing the external environment. Therefore, the electronic device 10a can be an electronic device capable of displaying VR (Virtual Reality). In the case where the optical member 13 does not have light transmission, for example, the optical member 13a The entire area occupied by the optical member 13b is the display area 16a. By using the area 16b, the image that can be viewed by the user of the electronic device 10a can be enlarged. Therefore, it is preferable.

[0050] The imaging device 15 has a function of detecting light. It is preferable to provide a light source in addition to a sensor (photoelectric conversion element) that has the function of detecting the amount of light. As a result, the light emitted from the light source is irradiated onto, for example, the face of the user of the electronic device 10a, and is reflected. For example, the imaging device 15 can be used in the electronic device 10a. Therefore, the electronic device can have a function of detecting the condition of the user's eyes and the surrounding area. 10a can have a function to recognize the facial features of the user, such as the user's facial expression, Therefore, it can have a function to estimate the user's fatigue level, emotions, etc.

[0051] The light source provided in the imaging device 15 has a function of emitting, for example, infrared light, for example, near-infrared light. In this case, the sensor provided in the imaging device 15 is preferably a sensor that detects infrared light, e.g. It is preferable that the imaging device 15 has a function of detecting near-infrared light. In this case, it is preferable that the image capturing device 15 has a function of emitting red light, for example. The sensor preferably has a function of detecting red light, for example. The slave device 10a can accurately recognize the facial features of the user, such as the user's facial expression.

[0052] The sensor provided in the imaging device 15 has a function of detecting, for example, far-infrared light. This allows the image capture device 15 to have a function of detecting, for example, the temperature of the face surface. Therefore, the electronic device 10a can estimate, for example, the physical condition, emotions, etc. of the user. For example, the imaging device 15 may have a sensor that detects red light. By having both the sensor having the function of detecting far-infrared light and the sensor having the function of detecting far-infrared light, the electronic device 10a The user's emotions and the like can be estimated more accurately.

[0053] In this specification, infrared light refers to light having a wavelength of 0.7 μm or more and 1000 μm or less. Near-infrared light refers to light with a wavelength of 0.7 μm or more and 2.5 μm or less, and Infrared light refers to light with a wavelength of 2.5 μm or more and 4 μm or less. Furthermore, far-infrared light refers to For example, it refers to light having a wavelength of 4 μm or more and 1000 μm or less. In this specification, far-infrared light is sometimes simply referred to as infrared light. For example, it refers to light with a wavelength of 0.6 μm or more and 0.75 μm or less.

[0054] The imaging device 15 is preferably provided so as to be in contact with the frame 18. The imaging device 15a is provided so as to surround the optical member 3a, and the imaging device 15b is provided so as to surround the optical member 13b. This makes it possible to separate the eyes of the user of the electronic device 10a from the imaging device 15. Since the distance between the electronic device 10a and the user can be shortened, the electronic device 10a can easily detect the user's facial expression and other information. It can accurately recognize facial features.

[0055] The imaging device 15a completely surrounds the optical member 13a, and the imaging device 15b completely surrounds the optical member 13a. Although the optical member 13a completely surrounds the optical member 3b, this is not a limitation of the present invention. The imaging device 15a may be provided so as to surround only the optical member 13b. The imaging device 15a and the imaging device 15b may be provided so as to surround the imaging device 15a. Two or more of each may be provided.

[0056] The imaging device 15 does not need to be provided with a light source. For example, the light source may be provided on the bridge of the frame 18. A light source is provided between the housing 12a and the optical member 13a, and between the housing 12b and the optical member 13b. By not providing a light source in the imaging device 15, it is possible to provide a high density of photoelectric conversion elements in the imaging device 15. It can be set at any time.

[0057] Furthermore, if the imaging device 15 does not have a light source, the light emitted from the display device 11 may be transmitted to, for example, an electronic device. The light reflected from the face of the user 10a is converted into an electric signal by a photoelectric conversion element of the image pickup device 15. In this case, the pixels provided in the display device 11 emit infrared light. It is preferable that the function be

[0058] The camera 19 has a function of capturing an image in front, that is, on the opposite side from the mounting unit 14. , can be called an imaging device.

[0059] Next, a method for projecting an image onto the display area 16 of the electronic device 10a will be described with reference to FIG. 1(B). The housing 12 contains a display device 11, a lens 21, and a reflector 22. In addition, the portion of the optical member 13 corresponding to the display area 16 has a function as a half mirror. It has a reflecting surface 23.

[0060] Light 25 emitted from the display device 11 passes through the lens 21 and is reflected by the reflector 22. Inside the optical member 13, the light 25 is totally reflected by the end surface of the optical member 13. The light is repeatedly projected onto the reflecting surface 23, and an image is projected onto the reflecting surface 23. The user can see the light 25 reflected by the reflecting surface 23 and the optical member 13 (including the reflecting surface 23). Both the transmitted light 26 and the light passing through the transparent plate 22 can be visually recognized.

[0061] FIG. 1B shows an example in which the reflector 22 and the reflecting surface 23 each have a curved surface. This increases the degree of freedom in optical design compared to when the reflector 22 and the reflecting surface 23 are flat. This allows the thickness of the optical member 13 to be reduced. The projection surface 23 may be a flat surface.

[0062] The reflector 22 may be a member having a mirror surface, and preferably has a high reflectivity. Furthermore, a half mirror that utilizes the reflection of a metal film may be used as the reflecting surface 23. If a prism or the like that utilizes total reflection is used, the transmittance of the transmitted light 26 can be increased.

[0063] Here, the housing 12 adjusts the distance between the lens 21 and the display device 11 and the angle therebetween. It is preferable that the lens has a mechanism for adjusting the focus and enlarging and reducing the image. For example, one or both of the lens 21 and the display device 11 can It may be configured to be movable in the axial direction.

[0064] Furthermore, it is preferable that the housing 12 has a mechanism that allows the angle of the reflector 22 to be adjusted. By changing the angle of the reflecting plate 22, the position of the display area 16 where the image is displayed can be changed. This allows the display area 16 to be positioned optimally according to the position of the user's eyes. This makes it possible to

[0065] 2A and 2B illustrate a configuration example of an electronic device 10b, which is an electronic device of one embodiment of the present invention. The electronic device 10b is a head-mounted display (HMD). The electronic device 10b can be a GoPro. Alternatively, the electronic device 10b can be called a glasses-type electronic device. This can be done.

[0066] The electronic device 10b includes a housing 31, a display device 33, a fixture 34, and a pair of optical members 35 ( Optical members 35a and 35b) and a pair of frames 36 (frame 36a, frame 36b), a pair of imaging devices 37 (imaging device 37a, imaging device 37b), a light source 40, It has.

[0067] The electronic device 10b is provided with an opening 32, and an optical element is provided in contact with the opening 32. The optical element 35, the frame 36, and the light source 40 are provided. The light source 40 is provided so as to contact the side surface of the optical member 35 and surround the optical member 35. The display device 33 can be provided between the optical member 35a and the optical member 35b. , can be provided inside the housing 31.

[0068] The display device 33 has a function of displaying an image. The image displayed on the display device 33 is The user of the device 10b can see through the optical member 35. The display device 11 of the child device 10a has a function of displaying high-definition images. For example, when the size of the display area of ​​the display device 33 is set to 8 inches, it is preferable that the display device 33 is set to 8K. It is preferable to have the ability to display images with 4K resolution.

[0069] The optical member 35 has the same function as the optical member 13 of the electronic device 10a. The material, configuration, etc. of the optical member 35 can be the same as those of the optical member 13.

[0070] The user of the electronic device 10b views the image displayed on the display device 33 through the optical member 35. The electronic device 10b can be an electronic device capable of VR display. .

[0071] The imaging device 37 has a function of detecting light. The imaging device 37 is provided with a photoelectric conversion element. Since the electronic device 10b is provided with a light source 40, the imaging device 37 is not provided with a light source. It's not necessary.

[0072] The electronic device 10b includes the imaging device 37 and the light source 40, and the light emitted by the light source 40 For example, light is irradiated onto the face of the user of the electronic device 10b, and the reflected light is detected by the imaging device 37. For example, the imaging device 37 can capture the eyes and surroundings of the user of the electronic device 10b. Therefore, the electronic device 10b can have a function of detecting the state of the edge. Like the 0a, it can have the function of recognizing the user's facial features, such as the user's facial expression. Therefore, it can have a function of estimating the user's fatigue level, emotions, etc.

[0073] The light source 40 preferably has a function of emitting, for example, infrared light, for example, near-infrared light. In this case, the imaging device 37 preferably has a function of detecting, for example, infrared light, for example, near-infrared light. Alternatively, it is preferable that the light source 40 has a function of emitting red light, for example. In this case, it is preferable that the imaging device 37 has a function of detecting red light, for example. The electronic device 10b can accurately recognize the facial features of the user, such as the user's facial expression. Similarly to the imaging device 15 of the electronic device 10a, the imaging device 37 is configured to capture, for example, far-infrared light. It may also have a function to detect outside lines.

[0074] The electronic device 10b may not have the light source 40. In this case, the display device 33 may not have a red light source 40. By providing pixels having a function of emitting external light, the imaging device 37 can be used in, for example, electronic equipment 1 It can have the function of detecting the eyes of the user of 0b and the condition of their surroundings.

[0075] The imaging device 37a is preferably provided so as to be in contact with the frame 36a. The positioning device 37b is preferably provided so as to be in contact with the frame 36b. Since the distance between the eyes of the user of the electronic device 10b and the image capturing device 37 can be shortened, The device 10b can accurately recognize the user's facial features, such as the user's facial expression.

[0076] The imaging device 37a completely surrounds the optical member 35a, and the imaging device 37b completely surrounds the optical member 35a. However, one aspect of the present invention is not limited to this. The imaging device 37a may be provided so as to surround only the optical member 35b. The imaging device 37a and the imaging device 37b may be provided so as to surround the imaging device 37a. Two or more of each may be provided.

[0077] In FIGS. 2A and 2B, the imaging device 37 is provided so as to be in contact with the frame 36. However, one aspect of the present invention is not limited to this. For example, the imaging device 37 may be disposed so as to be in contact with the opening 32. For example, as shown in FIG. 3(A), an optical member 35 and a frame 36 may be removed. An imaging device 37 may be provided so as to surround the optical member 3. An imaging device 37 is provided so as to surround the frame 36 and contact the frame 36. Another imaging device 37 may be provided so as to surround the opening 32 and be in contact with the opening 32 .

[0078] The electronic device 10b may not have the imaging device 37. In this case, for example, as shown in FIG. As shown in Fig. 1C, a light source 40a is provided in contact with the frame 36a, and a light source 40b is provided in contact with the frame 36b. In other words, the image capturing device 37 can be placed on the light source 40. If the electronic device 10b does not have the imaging device 37, for example, the display device 3 In other words, by providing the display device 33 with the function of an imaging device, Therefore, the electronic device 10b has a function of detecting the state of the user's eyes and the surroundings, for example. This can be done.

[0079] FIG. 4 is a block diagram showing an example of the configuration of the electronic device 10 (electronic device 10a, electronic device 10b). The electronic device 10 includes an information presentation unit 51, an object detection unit 52, a feature extraction unit 53, an estimation unit 54, and an image processing unit 55. 4. Information generating unit 55.

[0080] In the drawings attached to this specification, the components are classified by function and are shown as independent blocks. Although the block diagram is shown as a block, the actual components are not completely separated by function. It is difficult to achieve this, and one component may be involved in multiple functions, or one function may be shared by multiple components. It may be possible to achieve this.

[0081] The information presenting unit 51 presents information to the user of the electronic device 10 using the sense of sight, smell, hearing, or touch. The information presenting unit 51 has a function of providing a stimulus by using the information generated by the information generating unit 55 described later. The information can be presented (output) to the user of the electronic device 10. The display area 16 of the electronic device 10b and the display device 33 of the information presenting unit 51 It can be said that the information presenting unit 51 is a part of the information presenting unit 51 or has the information presenting unit 51.

[0082] Various hardware can be used as the information presentation unit 51. For example, the electronic device 1 When providing a visual stimulus (or presenting information) to the user's vision, an image is displayed. Use a display device that can change the brightness or color of the light. For example, devices that stimulate the sense of smell can be used to stimulate the sense of smell by vibration or heat. You can use an aroma diffuser to spray fragrance. The device that provides the sound is a speaker, a headphone, an earphone, or other audio output device. In addition, vibration devices can be used to stimulate the sense of touch. A motion device or the like can be used.

[0083] The subject detection unit 52 acquires information such as a part of the face of the user of the electronic device 10, and identifies the information. The electronic device 10a has a function of outputting the image data to the feature extraction unit 53. The imaging device 37 of the device 10b is part of the object detection unit 52 or is a part of the object detection unit It can be said that it has 52.

[0084] The feature extraction unit 53 extracts feature points from the face information output from the subject detection unit 52, and The feature points are used to extract part or all of the features of the face, and the extracted feature information is sent to an estimation unit 54. It has the function to output to.

[0085] When the face information acquired by the subject detection unit 52 is information about the eyes and their surroundings, the feature extraction unit The features extracted by 53 include the pupil, iris, cornea, conjunctiva (white of the eye), inner corner of the eye, outer corner of the eye, and upper Examples include the eyelids, lower eyelids, eyelashes, eyebrows, the space between the eyebrows, the inner corner of the eyebrow, and the outer corner of the eyebrow. Other features include the root of the nose, tip of the nose, bridge of the nose, nostrils, lips (upper lip, lower lip), corners of the mouth, cleft lip, The features include teeth, cheeks, chin, jaw, and forehead. The feature extraction unit 53 extracts the shape and position of these facial features. The system recognizes the location of each part and extracts the position coordinates of the feature points in each part. The position coordinate data and the like can be output to the estimation unit 54 as facial feature information.

[0086] The feature extraction unit 53 extracts features from the image acquired by the object detection unit 52. Various algorithms can be applied to extract feature points. For example, SIFT (S cale Invariant Feature Transform), SURF(S peed Up Robust Features), HOG (Histogram Algorithms such as (S of Oriented Gradients) can be used. Cut.

[0087] In particular, feature extraction by the feature extraction unit 53 is performed by inference using a neural network. In the following, we will explain the case where a neural network is used. .

[0088] FIG. 5(A) shows a neural network NN1 that can be used in the feature extraction unit 53. The neural network NN1 has an input layer 61, three hidden layers 62, and an output layer 63. The number of intermediate layers 62 is not limited to three, but may be one or more.

[0089] Data 71 generated by the object detection unit 52 is input to the neural network NN1. The data 71 is data including coordinates and values ​​corresponding to the coordinates. The image data can be a set of image data including the coordinates and the gradation values ​​corresponding to the coordinates. The network NN1 outputs data 72. The data 72 is the position of the feature point described above. This is data that includes coordinates.

[0090] The neural network NN1 extracts the above-mentioned feature points from data 71 such as image data. The neural network is trained to detect the location of a point and output its coordinates. In the NN1, edge processing using various filters is performed in the intermediate layer 62, The neural network is trained so that the neuron values ​​in the output layer 63 corresponding to the coordinates where the feature points exist are high. There are.

[0091] The estimation unit 54 estimates the user of the electronic device 10 from the facial feature information input from the feature extraction unit 53. and outputting the estimated information to the information generating unit 55. Here, the estimation unit 54 has a function of estimating the degree (level) of fatigue, physical condition, emotion, etc. It is preferable to have

[0092] The estimation by the estimation unit 54 is preferably performed by inference using a neural network. I wish.

[0093] FIG. 5B shows a schematic diagram of a neural network NN2 that can be used in the estimation unit 54. 5B shows a case where the estimation unit 54 estimates the emotion of the user of the electronic device 10. Also, the neural network NN2 is roughly the same as the neural network NN The input layer of the neural network NN2 is The number of neurons, 61, can be less than that of the neural network NN1. .

[0094] The neural network NN2 receives the data 72 generated by the feature extraction unit 53. The data 72 includes information relating to the coordinates of the extracted feature points.

[0095] In addition, data 72 was processed as input data to the neural network NN2. For example, a vector connecting two arbitrary feature points may be calculated and used as the vector. The results obtained for all or some of the feature points are used in the neural network NN2. Alternatively, the calculated vector may be normalized as data. In the following, we will use the processed data 72 output by the neural network NN1. The data will also be written as Data 72.

[0096] Data 72 is input to neural network NN2, which outputs data 73. The data 73 corresponds to the neuron values ​​output from each neuron in the output layer 63. Each neuron in the power layer 63 is associated with one emotion. Thus, the data 73 is generated from the data corresponding to a given emotion (joy, enjoyment, surprise, excitement, disgust, etc.). The data contains the neuron values ​​of the neurons.

[0097] The neural network NN2 estimates the degree of each emotion from the data 72 and The electronic device 10 has been trained in advance to output the face as a face value. The facial features of the user, such as facial expressions, can be determined based on the relative positional relationship of the multiple feature points. Therefore, the neural network NN2 can identify the user's face based on their facial features. You can guess the emotions you are feeling.

[0098] Figure 5(C) is a diagram showing the data 73. The higher the value of the emotion, the higher the degree of the estimated emotion. The degree of another emotion can be estimated from the degree of the emotion. The data including these emotions is referred to as data 74. In FIG. 5(C), the data includes emotions such as joy, pleasure, surprise, excitement, and disgust. This shows a case where the degree of interest is estimated from the degree of emotion.

[0099] The degree of emotion of interest contained in data 74 is, for example, the degree of joy and pleasure contained in data 73. Estimate the degree of emotion such as happiness, surprise, excitement, disgust, etc. by inputting it into a predetermined formula. For example, the greater the degree of joy, fun, surprise, and excitement, the greater the degree of interest. Increase the degree of dislike so that the greater the degree of dislike, the smaller the degree of interest. You can set the expression as follows:

[0100] Note that estimation of fatigue level, physical condition, emotions, etc. can also be performed without using a neural network. For example, an image of a part of the face of the user of the electronic device 10 acquired by the subject detection unit 52 can be The image is compared with a template image and the similarity is used by a template matching method or the like. In this case, the feature extraction unit 53 may not be provided.

[0101] The information generating unit 55 generates an information for the electronic device 1 based on the fatigue level, physical condition, emotion, etc. estimated by the estimating unit 54. The information presenting unit 51 has a function of determining or generating information to be presented to the user of the information presenting unit 51. As a result, the information presenting unit 51 presents information corresponding to the information generated by the information generating unit 55. It is possible.

[0102] For example, if the information presenting unit 51 has a function of displaying an image, the information generating unit 55 The information presentation unit 51 can generate or select an image to be displayed and output it to the information presentation unit 51. When the device 1 functions as a lighting device, the information generating unit 55 generates information such as the brightness (illuminance) of the lighting. The information presentation unit 51 can determine the color and output the color to the information presentation unit 51. If the device has a function to diffuse a fragrance, the information generating unit 55 determines the type of fragrance to be diffused or The information presenting unit 51 can output a signal or the like that controls the operation of the information presenting unit 51. In addition, if the information presenting unit 51 has a function to output sound, the information generating unit 55 plays the sound. It is possible to generate or select a sound and output it to the information presenting unit 51 together with information on the volume to be played back. In addition, when the information presenting unit 51 has a function of inducing vibration, the information generating unit 55 The vibration pattern and intensity are determined, and a signal for controlling the operation of the information presentation unit 51 is output. This can be done.

[0103] The above is a description of an example of the configuration of the electronic device 10.

[0104] The data 72 output from the feature extraction unit 53 is not input to the estimation unit 54, but is used for information generation. For example, the facial expression of the user of the electronic device 10 may be input directly to the estimation unit 55. Even if estimation by the feature extraction unit 54 is not performed, the feature can be detected by extracting feature points by the feature extraction unit 53. In such a case, the data 72 output from the feature extraction unit 53 can be used as the information generation unit. By directly inputting the signal to 55, the power consumption of the electronic device 10 can be reduced.

[0105] FIG. 6A is a diagram showing an example of a usage mode of the electronic device 10. In FIG. 6A, The figure shows a user 81 of an electronic device 10 having a conversation with a user 82 of another electronic device 10. Specifically, the image shows a user 82 talking to a user 81.

[0106] The electronic device 10 shown in FIG. 6A is the electronic device 10a shown in FIG. 1A, and further includes a transmitter 56 and The electronic device 10b shown in FIG. A configuration in which a transmitter 56 and a receiver 57 are provided may also be used.

[0107] The transmitter 56 and receiver 57 can be provided inside the housing 12. The transmitter 56 is The transmitter 57 may be a wired transmitter, and the receiver 57 may be a wireless receiver. The transmitter 56 and the receiver 57 do not have to be provided inside the housing 12. For example, The receiver 57 may be provided outside the housing 12 so as to be in contact with the housing 12. The transmitter 56 and the receiver 57 may be integrated into one unit.

[0108] The transmitter 56 has a function of transmitting the information generated by the information generating unit 55 to the outside of the electronic device 10. In FIG. 6A, the information generated by the information generating unit 55 is transmitted to another electronic device 10. This shows the case.

[0109] The receiver 57 has a function of receiving information from outside the electronic device 10. For example, The device 10 has a function of receiving information transmitted from the transmitter 56. The received information is, for example, For example, it can be displayed on the information presentation unit 51.

[0110] In the case shown in FIG. 6(A), user 81 listens to the content of the speech of user 82. The electronic device 10 used by the user 81 estimates the emotion felt by the user 81. The electronic device 10 used by the user 81 estimates the degree of interest in the content of the second story. The information indicating the degree of interest of the user 81 is provided in the electronic device 10 used by the user 81. The information transmitted from the transmitter 56 is used by the user 82. The receiver 57 receives the information. The information received by the receiver 57 is presented by the information presenting unit 51. .

[0111] FIG. 6B shows the field of view of user 82. In addition to user 81, user 82 also has other users in his field of view. The information presentation unit 51 includes an information presentation unit 51 that presents information about the electronic device used by the user 82. The information received by the receiver 57 of the device 10 is displayed. The degree of flavor is displayed. Thus, the user 82 can know the degree of interest of the user 81. For example, if the user81 is not very interested, the topic can be changed. This allows the user 81 to find topics that interest him / her. In this case, user 81 can find out the degree of interest of user 82.

[0112] Alternatively, the information presentation unit 51 of the electronic device 10 may display information such as the fatigue level, physical condition, etc. of the user of the other electronic device 10. In this way, the user of the electronic device 10 can see the status of the other users of the electronic device 10. Therefore, for example, the user of the electronic device 10 can know the degree of fatigue, physical condition, etc. It is possible to show consideration to those who have high blood pressure or are not feeling well by encouraging them to take rest. Or, it can provide accurate advice on health management.

[0113] FIG. 7 is a block diagram showing an example of the configuration of the electronic device 10 shown in FIG. 6(A), which is different from the configuration shown in FIG. The electronic device 10 shown in FIG. 7 has a transmitter 56 and a receiver 57. 4. In this respect, the electronic device 10 differs from the electronic device 10 shown in FIG.

[0114] As shown in Fig. 7, the transmitter 56 is supplied with information generated by the information generating unit 55. The information is transmitted externally from the electronic device 10 by a transmitter 56 .

[0115] The receiver 57 receives information from outside the electronic device 10. For example, Alternatively, the electronic device 10 can receive information transmitted from an electronic device other than the electronic device 10. It can receive information transmitted via a radio wave or broadcasting signal. The information received by the receiver 57 is presented by the information presenting unit 51. An image corresponding to the information can be displayed in a display area of ​​the information presenting unit 51.

[0116] This embodiment may be appropriately combined with at least a part of another embodiment described in this specification. It can be implemented in combination.

[0117] (Embodiment 2) In this embodiment, a display device, a light source, and a display device that can be applied to an electronic device of one embodiment of the present invention will be described. The imaging device and the like will be described.

[0118] <Display device configuration example 1> FIG. 8 is a block diagram illustrating a structural example of a display device 810 which is a display device of one embodiment of the present invention. The display device 810 includes a layer 820 and a layer 830 stacked on top of the layer 820. 820 includes a gate driver circuit 821, a source driver circuit 822, and a circuit 840. The layer 830 has pixels 834, which are arranged in a matrix to form a pixel array. An interlayer insulator 833 can be provided between the layer 820 and the layer 830. The layer 820 may be laminated above the layer 830.

[0119] The circuit 840 is electrically connected to the source driver circuit 822. may be electrically connected to other circuits.

[0120] The pixels 834 in the same row are electrically connected to the gate driver circuit 821 via the wiring 831. The pixels 834 in the same column are electrically connected to the source driver circuit 822 via the wiring 832. The wiring 831 functions as a scanning line, and the wiring 832 functions as a data line. It has all the functions.

[0121] In FIG. 8, the pixels 834 in one row are electrically connected by one wiring 831, and The pixel 834 is electrically connected by a single wiring 832. One embodiment of the present invention is not limited to this. For example, when the pixels 834 in one row are connected to two or more wirings 831, Therefore, the pixels 834 in one column may be electrically connected, or the pixels 834 in one column may be connected by two or more wirings 832. That is, for example, one pixel 834 may be electrically connected to two or more scanning lines. It may be electrically connected to a scan line or to two or more data lines. Alternatively, for example, one wiring 831 may be electrically connected to two or more rows of pixels 834. Alternatively, one wiring 832 may be electrically connected to two or more columns of pixels 834. That is, for example, one wiring 831 may be shared by two or more rows of pixels 834, or one wiring The wiring 832 may be shared by two or more columns of pixels 834 .

[0122] The gate driver circuit 821 generates signals for controlling the operation of the pixels 834 and transmits the signals to the wiring 8 The source driver circuit 822 has a function of supplying the signal to the pixel 834 via the source driver circuit 822. The pixel 834 has a function of generating an image signal and supplying the signal to the pixel 834 via the wiring 832. The circuit 840 is, for example, a pixel driver circuit that generates an image signal from the source driver circuit 822. and a function of receiving image data from the source driver circuit 822 and supplying the received image data to the source driver circuit 822. The circuit 840 also includes a control circuit for generating a start pulse signal, a clock signal, etc. In addition, the circuit 840 functions as a gate driver circuit 821 and a source It may be a circuit having a function that the driver circuit 822 does not have.

[0123] The pixel array 833 corresponds to the image signal supplied to the pixel 834 by the source driver circuit 822. Specifically, the light having a brightness corresponding to the image signal is projected onto the pixels. An image is displayed on the pixel array 833 by emitting light from 834 .

[0124] In FIG. 8, the positional relationship between the layer 820 and the layer 830 is indicated by a dashed line and a hollow circle. The open circle of layer 820 and the open circle of layer 830, which are connected by a chain line, overlap each other. Similar notations are used in other drawings.

[0125] The display device 810 includes a gate driver circuit 821 and a source driver circuit 822 provided on a layer 820. The circuit 822 has an area overlapping with the pixel array 833. For example, the gate driver circuit The circuit 821 and the source driver circuit 822 have an area overlapping with the pixel 834. The light driver circuit 821 and the source driver circuit 822 are connected to the pixel array 833. By stacking the layers so as to have an overlapping area, the frame of the display device 810 can be narrowed. and can be made smaller.

[0126] Also, the gate driver circuit 821 and the source driver circuit 822 are not clearly separated and overlap. This region is referred to as region 823. By having region 823, The area occupied by the gate driver circuit 821 and the source driver circuit 822 can be reduced. Therefore, even if the area of ​​the pixel array 833 is small, the gate driver circuit 8 21 and the source driver circuit 822 are provided without protruding from the pixel array 833. Alternatively, the pixel array of the gate driver circuit 821 and the source driver circuit 822 can be The area of ​​the region that does not overlap with the ray 833 can be reduced. The frame can be made narrower and more compact than when no such element is provided.

[0127] The circuit 840 can be provided so as not to overlap with the pixel array 833. 40 may be provided to have an area overlapping with the pixel array 833.

[0128] In FIG. 8, a layer 820 includes one gate driver circuit 821 and one source driver circuit 822. 8, one pixel array 833 is provided in the layer 830. In other words, the pixel array 833 provided in the layer 830 may be a plurality of pixel arrays 833. 9 shows a modification of the configuration shown in FIG. 8, in which a layer 830 has three rows and three columns of pixels. 8 shows an example of the configuration of the display device 810 when an array 833 is provided. 0 may have a pixel array 833 with two rows and two columns, or a pixel array with four rows and four columns or more. The layer 830 may have a pixel array 833. In the display device 810 having the configuration shown in FIG. The pixel array 833 can be used to display an image.

[0129] In FIG. 9, the wiring 831 and the wiring 832 are omitted for clarity of the drawing. A display device 810 having the configuration shown in FIG. Although the electrical connections of the circuit 840 are omitted, in reality, the source driver circuit 8 22. In other figures, some components are also electrically connected to the etc. may be omitted.

[0130] The layer 820 includes a gate driver circuit 821 and a source driver circuit 822, e.g., In this case, the gate driver circuits 821 can be provided in the same number as the arrays 833. a pixel array 833 provided with pixels 834 to which a gate driver circuit 821 supplies a signal; The source driver circuit 822 can be provided so as to overlap the source driver. The driver circuit 822 overlaps a pixel array 833 in which pixels 834 that supply image signals are provided. It can be set up as follows.

[0131] A plurality of pixel arrays 833 are provided, and gate driver circuits 821 and source driver circuits 822 are provided in accordance with the pixel arrays. By providing the driver circuit 822, the number of pixels 834 provided in one pixel array 833 The number of gate driver circuits 821 can be reduced. The plurality of source driver circuits 822 can be operated in parallel. For example, an image signal corresponding to one frame of image can be input to 8 pixels. Therefore, the time required to write data to the memory cell 34 can be shortened. This reduces the length of time required for the display device 810 to operate, thereby increasing the speed of the display device 810. The number of pixels 834 in the display device 810 can be increased, and the resolution of the display device 810 can be improved. Furthermore, the display device according to one embodiment of the present invention can display The image definition is maintained by ensuring that the gate driver circuit and source driver circuit do not overlap with the pixel array. The resolution of the image that can be displayed by the display device of this configuration can be further increased. Furthermore, the clock frequency can be reduced, thereby reducing the power consumption of the display device 810. It is possible.

[0132] Here, the gate driver circuit and the source driver circuit are configured so as not to overlap with the pixel array. In this case, the gate driver circuit and the source driver circuit are provided, for example, on the periphery of the pixel array. In this case, providing a pixel array with more than two rows and two columns is On the other hand, in the display device 810, the gate driver By providing the circuit and the source driver circuit on a layer different from the layer on which the pixel array is provided, Therefore, it can be provided so as to have an area overlapping with the pixel array, as shown in FIG. In other words, the display device 810 can have a pixel array of more than two rows and two columns. Five or more gate driver circuits and five or more source driver circuits can be provided. .

[0133] As described above, the display device 810 includes a gate driver circuit and a source driver circuit. Therefore, the display can be operated at a higher speed than a display device having a configuration in which the display is not overlapped. The definition of device 810 is increased by the gate driver circuitry and source driver circuitry overlapping the pixel array. For example, the pixel density of the display device 810 can be increased to 1 000ppi or more, 5000ppi or more, 10000ppi or more ppi. Therefore, a high-quality image with little graininess can be displayed on the display device 810. It is possible to display highly realistic images.

[0134] The resolution of the image that can be displayed by the display device 810 can be controlled by the gate driver circuit The source driver circuit can be displayed on a display device that does not overlap with the pixel array. For example, the display device 810 can support 4K2K, 8K It is possible to display images with a resolution of 4K or higher. For example, the size of the display area of ​​the display device 810 can be set to 8 inches or less. It is possible.

[0135] The layer 820 is provided with a plurality of source driver circuits 822 and the like, and the layer 830 is provided with a pixel array 8 Even if a plurality of 33 are provided, the same as in the case shown in FIG. Therefore, as shown in FIG. 9, the number of circuits 840 to be used can be one. 40 can be provided so as not to overlap any of the pixel arrays 833. The path 840 may be provided to have an area that overlaps with any of the pixel arrays 833 .

[0136] FIG. 9 shows an example of a configuration in which the same number of gate driver circuits 821 as the pixel arrays 833 are provided. 9. However, one embodiment of the present invention is not limited to this. In the case where the number of gate driver circuits 821 is the same as the number of columns of the pixel array 833, 10 shows an example of the configuration of a display device 810. In the display device 810 having the configuration shown in FIG. Since a plurality of gate driver circuits 821 are provided, three gate driver circuits 821 are provided. In addition, a pixel array 833 of three rows is provided, and the pixel array 833 of three rows and one column corresponds to one gate. The gate driver circuit 821 is shared.

[0137] FIG. 11 shows a modified example of the configuration shown in FIG. 9, in which a plurality of pixel arrays 833 are provided and gated 1 shows an example of the configuration of a display device 810 in which one driver circuit 821 is provided. In the display device 810 having the configuration shown in FIG. 1, a pixel array 833 having 3 rows and 3 columns is connected to one gate driver. In the display device 810 having the configuration shown in FIG. The driver circuit 821 can be configured not to overlap the pixel array 833 .

[0138] Although not shown, the same number of source driver circuits 822 as the pixel arrays 833 are also provided. The number of source driver circuits 822 included in the display device 810 may be The number of pixels may be greater or less than the number of pixel arrays 833 provided in the device 810.

[0139] FIG. 8 shows a configuration example in which a circuit 840 is provided on the layer 820. 12 shows a variation of the configuration shown in FIG. 8, in which a circuit 840 is provided on the layer 830. 8 shows a configuration example of a display device 810 in which a circuit 840 is provided. The elements may be distributed across layers 820 and 830 .

[0140] FIG. 8 shows an example of a configuration in which one pixel array 833 and one gate driver circuit are provided. However, the number of gate driver circuits may be greater than the number of pixel arrays 833. 8, in which two gate driver circuits are provided for one pixel array 833. (Gate driver circuit 821a, gate driver circuit 821b) When the display device is provided 8 shows an example of the configuration of 810.

[0141] In the display device 810 having the configuration shown in FIG. 13, the pixels 834 in the odd-numbered rows are connected to the line 831a. The pixels 834 in the even-numbered rows are electrically connected to the gate driver circuit 821a through the wiring 83. 1b. The wiring 831b functions as a scan line, similar to the wiring 831.

[0142] The gate driver circuit 821a generates signals for controlling the operation of the pixels 834 in the odd-numbered rows. The gate driver 831a has a function of supplying the signal to the pixel 834 via the wiring 831a. The driver circuit 821b generates signals for controlling the operation of the pixels 834 in the even-numbered rows, and The signal is supplied to the pixel 834 via 831b.

[0143] The gate driver circuit 821a and the gate driver circuit 821b are 21, it has an area overlapping with the pixel array 833. For example, The gate driver circuit 821a and the gate driver circuit 821b are the same as the gate driver circuit 821. The gate driver circuit 821a has an area overlapping with the source driver 834. The driver circuit 822 is not clearly separated from the driver circuit 822, and has an overlapping region 823a. The gate driver circuit 821b is not clearly separated from the source driver circuit 822, but overlaps with it. It has a region 823b.

[0144] In the display device 810 having the configuration shown in FIG. 13, the gate driver circuit 821a is operated to After writing the image signals to all the pixels 834 in the first row, the gate driver circuit 821b is operated. By doing so, image signals can be written to all the pixels 834 in the even-numbered rows. The display device 810 having the configuration shown in FIG. By operating in an interlaced manner, the operation of the display device 810 can be accelerated, and In addition, the number of image signals written in one frame period can be increased. The number of pixels 834 is set to half that when the display device 810 is operated by the progressive method. Therefore, when the display device 810 is operated in an interlaced mode, In this case, the clock frequency can be reduced compared to when the progressive method is used. Therefore, the power consumption of the display device 810 can be reduced.

[0145] FIG. 8 shows a configuration example in which only one end of the wiring 832 is connected to the source driver circuit 822. However, the wiring 832 may be connected to the source driver circuit 822 at multiple locations. FIG. 14 shows the case where the source driver circuit 822 is connected to both ends of the wiring 832. 8 shows an example of the configuration of a display device 810. A plurality of wirings 832 are connected to a source driver circuit 82. By connecting to 2, signal delays caused by wiring resistance, parasitic capacitance, etc. can be suppressed. This allows the operation of the display device 810 to be speeded up.

[0146] In addition to one end and the other end of the wiring 832, other portions of the wiring 832 are connected to the source driver circuit. For example, the center of the wiring 832 may be connected to the source driver circuit. The connection point between the wiring 832 and the source driver circuit 822 By increasing the number of locations, signal delays and the like can be further suppressed, and the display device 810 For example, one end of the wiring 832 and the other end of the wiring 832 can be connected to each other. The central end is connected to the source driver circuit 822, and the other end of the wiring 832 is connected to the source driver circuit 822. It does not have to be connected to the circuit 822.

[0147] In addition, when one source driver circuit 822 is connected to a plurality of points of the wiring 832, as shown in FIG. 14, the area occupied by the source driver circuit 822 becomes larger. However, the source driver circuit 822 is stacked so as to have an area overlapping with the pixel array 833. Since the display device 810 is provided, it is possible to prevent the display device 810 from becoming large. In FIG. 14, the entire gate driver circuit 821 is clearly separated from the source driver circuit 822. Although they are not separated but overlap, one source driver circuit 822 is connected to multiple points of the wiring 832. Even when the gate driver circuit 821 is connected, only a part of the gate driver circuit 821 is connected to the source driver circuit It may be configured to overlap with 822.

[0148] Note that multiple locations of the wiring 831 may be connected to one gate driver circuit 821. This also makes it possible to suppress signal delays and the like, and to speed up the operation of the display device 810. In this configuration, the occupied area is the same as that of the source driver circuit 822 shown in FIG. Although the product is large, the gate driver circuit 821 has an overlapping area with the pixel array 833. Since the display devices 810 are stacked in this manner, the display device 810 can be prevented from becoming large. can.

[0149] The configurations of the display device 810 shown in FIGS. 8 to 14 can be combined as appropriate. For example, 9 and the configuration shown in FIG. 13 can be combined. In this case, the display device The configuration of 810 may be, for example, a configuration in which a plurality of pixel arrays 833 are provided and a gate driver circuit is connected to each pixel array. The number of source driver circuits 822 is doubled to the number of pixel arrays 833. It is possible to provide a configuration in which:

[0150] <Configuration Example of Circuit 840 and Source Driver Circuit 822> FIG. 15 is a block diagram showing an example of the configuration of the circuit 840 and the source driver circuit 822. As shown in FIG. Although only one source driver circuit 822 is shown in FIG. 15, multiple circuits 840 may be used. The pixel electrodes 821 and 822 may be electrically connected to the source driver circuit 822.

[0151] The circuit 840 includes a receiving circuit 841, a serial-to-parallel conversion circuit 842, and a potential generating circuit 843. The source driver circuit 822 includes a buffer circuit 843 and a shift register 46a. a latch circuit 845; a pass transistor logic circuit 846b; The potential generating circuit 846a and the pass transistor logic The digital-to-analog converter circuit (hereinafter referred to as the DA converter circuit) 846 is formed by the clock circuit 846b. Configure.

[0152] The receiving circuit 841 is electrically connected to the serial-parallel conversion circuit 842, and The shift converter circuit 842 is electrically connected to a buffer circuit 843. The buffer circuit 843 is The shift register is electrically connected to the shift register circuit 844 and the latch circuit 845. The circuit 844 is electrically connected to the latch circuit 845, and the latch circuit 845 and the potential generating circuit 846a is electrically connected to the pass transistor logic circuit 846b. The transistor logic circuit 846b is electrically connected to the input terminal of the amplifier circuit 847. The output terminal of the loop circuit 847 is electrically connected to the wiring 832 .

[0153] The receiving circuit 841 receives image data that is the basis of the image signal generated by the source driver circuit 822. The image data can be single-ended image data. The receiving circuit 841 is LVDS (Low Voltage Differential When receiving image data using a data transmission signal such as IEEE 802.11a / b / g (IEEE 802.11b / g) or IEEE 802.1 ... It may also have a function for converting into a signal standard that can be processed internally.

[0154] The serial-to-parallel conversion circuit 842 converts the single-ended image signal output from the receiving circuit 841 into The serial-to-parallel conversion circuit 842 has a function of converting data into parallel data. By providing this, image data and the like can be transmitted from the circuit 840 to the source driver circuit 822 and the like. Even if the load during transmission is large, the image data and the like are transmitted from the circuit 840 to the source driver circuit 822 and the like. It will be possible to transmit.

[0155] The buffer circuit 843 may be, for example, a unity gain buffer. The line 843 receives the same image data as that output from the serial-to-parallel conversion circuit 842. The source driver circuit 822 has a function of outputting a buffer circuit 843. As a result, the potential corresponding to the image data output from the serial-parallel conversion circuit 842 is When the signal is transmitted from the circuit 840 to the source driver circuit 822, it is assumed that the signal is reduced due to wiring resistance or the like. This allows the source driver to be restored from the circuit 840. Even if the load when transmitting image data to the source driver circuit 822 is large, 22 and the like can be prevented from decreasing in driving ability.

[0156] The shift register circuit 844 generates a signal for controlling the operation of the latch circuit 845. The latch circuit 845 has the function of holding or storing the image data output by the buffer circuit 843. The latch circuit 845 has a function of holding or outputting image data. Which of these operations is performed is selected based on a signal supplied from the shift register circuit 844. do.

[0157] The DA conversion circuit 846 converts the digital image data output by the latch circuit 845 into an analog The potential generating circuit 846a has a function of converting the DA convertible image data into an image signal. The potentials corresponding to the number of bits of the data are generated and supplied to the pass transistor logic circuit 846b. For example, the DA conversion circuit 846 converts 8-bit image data into analog data. When the potential generating circuit 846a has a function of converting the image signal into an image signal, the potential generating circuit 846a has different sizes. It is possible to generate 256 different potentials.

[0158] The pass transistor logic circuit 846b receives the image data from the latch circuit 845, Based on the digital value of the received image data, the potential generating circuit 846a generates one of the potentials. For example, the larger the digital value of the image data, the more likely it is to be pasted. The potential output by the transistor logic circuit 846b can be increased. The potential output from the resistor logic circuit 846b can be used as an image signal.

[0159] As shown in FIG. 15, in the display device 810, the circuit constituting the DA conversion circuit 846 is The driver circuit 822 and the circuit 840 may be provided separately. , such as the pass transistor logic circuit 846b, can be provided for each source driver circuit. A circuit such as a potential generating circuit 846a is preferably provided in the source driver circuit 822. Circuits that do not need to be provided for each source driver circuit may be provided in the circuit 840. As a result, for example, all of the circuits constituting the DA conversion circuit 846 can be connected to the source driver circuit. The area occupied by the source driver circuit 822 can be made smaller than when the source driver circuit 822 is provided on the Therefore, the number of source driver circuits 822 provided in the layer 820 can be increased. Therefore, the number of pixel arrays 833 provided in the layer 830 can be increased, and the display device 8 10 faster operation, reduced power consumption, improved definition, increased displayable image resolution, etc. Here, in the circuits other than the DA conversion circuit 846, the circuit The components are configured to be distributed and provided to the source driver circuit 822 and the circuit 840. This is possible.

[0160] As shown in FIG. 15, when the circuits constituting the DA conversion circuit 846 are distributed and provided to the source driver circuit 8 22 and the circuit 840, the display device 810 can have, for example, one potential generation circuit 846a and the same number of pass transistor logic circuits 846b as the source driver circuit 822.

[0161] The amplifier circuit 847 has a function of amplifying the image signal output from the pass transistor logic circuit 846b and outputting it to the wiring 832 having a function as a data line. By providing the amplifier circuit 8 47, the image signal can be stably supplied to the pixel 834. As the amplifier circuit 8 47, a voltage follower circuit having an operational amplifier or the like can be applied. When a circuit having a differential input circuit is used as the amplifier circuit, the offset voltage of the differential input circuit is preferably made as close to 0V as possible.

[0162] In addition to the reception circuit 841, the serial - parallel conversion circuit 842, and the potential generation circuit 846a, the circuit 840 can be provided with various circuits. For example, the circuit 840 can be provided with a control circuit having a function of generating a start pulse signal, a clock signal, etc. This is possible.

[0163] <Configuration example of DA conversion circuit 846> FIG. 16 is a circuit diagram showing a configuration example of the potential generation circuit 846a and the pass transistor logic circuit 846b that constitute the DA conversion circuit 846. The DA conversion circuit having the configuration shown in FIG. 16 846 is 8-bit image data D <1> Image data D <8> analog image signal No. IS can be converted to .

[0164] In this specification, for example, the first bit of image data D is image data D <1> and write The second bit of image data D is <2> The 8th bit of the image is written as Image data D is image data D <8> This is indicated as follows.

[0165] The potential generating circuit 846a having the configuration shown in FIG. 16 includes resistors 848[1] to 848[8].

[0256] These are connected in series. It can be an anti-string type DA conversion circuit.

[0166] A potential VDD can be supplied to one terminal of the resistor element 848[1]. One terminal of 848

[0256] can be supplied with a potential VSS. The resistor elements 848[1] to 848

[0256] are supplied with potentials of different magnitudes from their respective terminals. V1 to V 256 In FIG. 16, the potential V1 is set to the potential VDD. 1 shows an example of the configuration of the potential generating circuit 846a when the potential V 256 potential VSS Alternatively, the resistor element 848 may not be provided, and the potential V1 may be set to the potential VD D, potential V 256 may be set as the potential VSS.

[0167] In this specification, the potential VDD can be, for example, a high potential, and the potential VSS can be, for example, The low potential may be, for example, the ground potential. In addition, the high potential is a potential higher than the low potential, and if the low potential is the ground potential, it is considered to be a positive potential. It is possible.

[0168] The pass transistor logic circuit 846b having the configuration shown in FIG. 16 includes eight stages of pass transistors. Specifically, the pass transistor logic circuit 846b is configured with a single stage Each of these has a configuration that electrically branches into two paths, for a total of 256 paths. In other words, the pass transistors 849 are electrically connected in a tournament fashion. The source or drain of the eighth-stage pass transistor 849, which is the final stage, An analog image signal IS can be output from one end.

[0169] For example, image data D <1> can be fed to the first stage pass transistor 849, Image data D <2> can be fed to the second stage pass transistor 849, TaD <8> can be supplied to the eighth-stage pass transistor 849. The potential of the image signal IS is set to one of potentials V1 to V2 according to the image data D. 256 Either Therefore, digital image data can be converted into an analog image signal IS. It is possible.

[0170] The pass transistor logic circuit 846b shown in FIG. 16 includes n-channel pass transistors. Both a p-channel type pass transistor 849 and a p-channel type pass transistor 849 are provided. However, it is also possible to use a configuration in which only an n-channel pass transistor 849 is provided. For example, image data D <1> Image data D <8> In addition, these complementary data are used in the pastoral 849 to the gate of the pass transistor logic circuit 846b. All of the pass transistors 849 provided in the can.

[0171] The configuration shown in FIG. 16 has a function of converting image data D with a bit number other than 8 bits into digital data. For example, the potential generating circuit 846a may be provided with a resistor. 1024 or 1023 elements 848 are provided in the pass transistor logic circuit 846b. By providing 10 stages of pass transistors 849, the DA conversion circuit 846 can It can have a function of converting image data D into digital to digital.

[0172] <Configuration example of gate driver circuit 821> 17 is a block diagram showing an example of the configuration of the gate driver circuit 821. The circuit 821 is a shift register circuit made up of a plurality of set-reset flip-flops. The shift register circuit SR has a wiring 831 that functions as a scanning line. The wiring 831 is electrically connected to the semiconductor laser 810 and has a function of outputting a signal to the wiring 831 .

[0173] The signal RES is a reset signal, and by setting the signal RES to a high potential, for example, the shift register The output of the timer circuit SR can be set to a low potential. The signal SP is a start pulse signal. By inputting the signal to the gate driver circuit 821, the shift register circuit S The signal PWC is a pulse width control signal. The soft register circuit SR has a function of controlling the pulse width of a signal output to the wiring 831 . Signals CLK[1], CLK[2], CLK[3], and CLK[4] are clock signals. The shift register circuit SR includes signals CLK[1] to CLK For example, two signals can be input from [4].

[0174] The configuration shown in FIG. 17 includes a wiring 831 electrically connected to the shift register circuit SR. By using other wiring, the shift register circuit 8 included in the source driver circuit 822 can be It can also be applied to 44 etc.

[0175] FIG. 18(A) shows the signals input to the shift register circuit SR and the shift register circuit S 18A is a diagram showing a signal output from R. Here, in FIG. 18A, as a clock signal, 10 shows the case where signals CLK[1] and CLK[3] are input.

[0176] The signal FO is an output signal, and is a signal that is output to, for example, a wiring 831. is a shift signal, and is the signal LIN input to the next stage shift register circuit SR. As described above, among the signals shown in FIG. 18A, the signal RES, the signal PWC, and the signal CLK [1], signal CLK[3], and signal LIN are signals input to the shift register circuit SR. The signal FO and the signal SROUT are signals output from the shift register circuit SR. be.

[0177] FIG. 18B shows the shift register circuit SR whose input and output signals are the signals shown in FIG. 18A. 1 is a circuit diagram showing a configuration example. The shift register circuit SR includes transistors 851 to 855. The pixel circuit includes a resistor 863 and capacitors 864 to 866.

[0178] One of the source and drain of the transistor 851 is connected to the source and drain of the transistor 852. one of the drains of the transistor 856 and the source or drain of the transistor 85 The gate of the transistor 852 is electrically connected to one of the source and drain of the transistor 852. is the source or drain of the transistor 853, the source or drain of the transistor 854 One of the drains, one of the source or drain of the transistor 855, and the transistor 858 the gate of the transistor 861, and one electrode of the capacitor 864. The other of the source and drain of the transistor 856 is connected to a transistor 857. The gate of the transistor 8 is electrically connected to one electrode of the capacitor 865. The other of the source and drain of the transistor 860 is connected to the gate of the transistor 860 and the capacitor 866. One of the source and drain electrodes of the transistor 860 is electrically connected to the On the other hand, one of the source or drain of the transistor 861, the gate of the transistor 862, and the other electrode of the capacitor 866 .

[0179] A signal LIN is input to the gate of the transistor 851 and the gate of the transistor 855. The signal CLK[3] is input to the gate of the transistor 853. A signal RES is input to the gate of the transistor 854. The signal CLK[1] is input to one of the inputs. The other input receives the signal PWC.

[0180] One of the source or drain of the transistor 862 and the source or drain of the transistor 863 One of the drains is electrically connected to the wiring 831, and as described above, The other of the source and drain of the transistor 857 is connected to the transistor A signal S is output from one of the source and drain of the capacitor 858 and the other electrode of the capacitor element 865. ROUT is output.

[0181] The other of the source or drain of the transistor 851 and the source or drain of the transistor 853 the other input of the transistor 854, the other source or drain of the transistor 856, the gate of transistor 859 and the source or drain of transistor 862. The other of the source and drain of the transistor 852 is supplied with a potential VDD. The other of the source or drain of the transistor 855 and the other of the source or drain of the transistor 858 the other of the input terminals, the other of the source or drain of the transistor 861, the source or drain of the transistor 863 The potential VSS is supplied to the other of the source and drain electrodes of the capacitor 864. .

[0182] The transistor 863 is a bias transistor and functions as a constant current source. The gate of the transistor 863 can be supplied with a bias potential Vbias. can.

[0183] The transistor 862 and the transistor 863 form a source follower circuit 867. By providing a source follower circuit 867 in the shift register circuit SR, Even if signal attenuation occurs due to wiring resistance, parasitic capacitance, etc. inside the SR This can suppress the resulting decrease in the potential of the signal FO. The source follower circuit 867 can speed up the operation of the buffer 810. As long as it has the function of the source follower circuit, a circuit other than the source follower circuit may be used.

[0184] <Configuration example of area 823> FIG. 19 shows the area where the gate driver circuit 821 and the source driver circuit 822 overlap. 19 is a diagram showing an example of the configuration of a region 823. As shown in FIG. 19, the region 823 includes a gate driver. an area having elements constituting a source driver circuit 821 and an area having elements constituting a source driver circuit 822; In FIG. 19, the gate driver circuit A transistor 871 is shown as an element constituting the source driver circuit 821. A transistor 872 is shown as the element that forms the circuit.

[0185] In FIG. 19, the regions having elements that constitute the gate driver circuit 821 are arranged in the first and third rows. The regions having elements that constitute the source driver circuit 822 are set in the second and fourth rows. In the region 823, the gate driver circuit 821 is configured. Dummy elements are provided between each area having elements. Dummy elements are provided between the regions having the elements that make up the transistor 2. Dummy transistors are provided on all four sides of the transistor 871 and on all four sides of the transistor 872 as dummy elements. 8 shows an example of the configuration of the region 823 when a transistor 873 is provided.

[0186] By providing a dummy element such as a dummy transistor 873 in the region 823, the dummy The element absorbs impurities, and the impurities diffuse into the transistor 871 and the transistor 872. This can prevent the transistors 871 and 87 2, the reliability of the display device 810 can be improved. In FIG. 19, the transistors 871 and 872 and the dummy transistors The resistors 873 are arranged in a matrix, but they can be used even if they are not arranged in a matrix. good.

[0187] 20 is a top view showing an example of the configuration of an area 870, which is a part of the area 823. As shown in FIG. 20, region 870 contains one transistor 871 and one transistor 872. As shown in FIG. 20, one dummy transistor 873 is provided. The gate 871 includes a channel forming region 110, a source region 111, a drain region 112, and a The gate electrode 1 is formed so as to have a region overlapping with the channel forming region 110. It has 13.

[0188] In FIG. 20, components such as a gate insulator are omitted. The hole formation region, source region, and drain region are not clearly separated.

[0189] An opening 114 is provided in the source region 111, and the source region 111 is The drain region 112 is electrically connected to a wiring 115. An opening 116 is provided in the drain region 112. The drain region 112 is electrically connected to a wiring 117 through the opening 116 .

[0190] An opening 118 is provided in the gate electrode 113, and the gate electrode 113 is The wiring 115 is electrically connected to the wiring 121. An opening 119 is provided in the wiring 115. The wiring 115 is electrically connected to the wiring 122 through the portion 119. An opening 120 is provided, and the wiring 117 is electrically connected to the wiring 123 through the opening 120. That is, the source region 111 is electrically connected to the wiring 122 via the wiring 115. The drain region 112 is electrically connected to a wiring 123 via a wiring 117 .

[0191] The transistor 872 includes a channel forming region 130, a source region 131, and a drain region The gate electrode 132 is formed so as to have an area overlapping with the channel forming region 130. It has a ground electrode 133.

[0192] An opening 134 is provided in the source region 131, and the source region 131 is The drain region 132 is electrically connected to a wiring 135. An opening 136 is provided in the drain region 132. The drain region 132 is electrically connected to a wiring 137 through the opening 136 .

[0193] An opening 138 is provided in the gate electrode 133, and the gate electrode 133 is The wiring 135 is electrically connected to the wiring 141. An opening 139 is provided in the wiring 135. The wiring 135 is electrically connected to the wiring 142 through the portion 139. An opening 140 is provided, and the wiring 137 is electrically connected to the wiring 143 through the opening 140. That is, the source region 131 is electrically connected to the wiring 142 via the wiring 135. The drain region 132 is electrically connected to a wiring 143 via a wiring 137 .

[0194] The channel forming region 110 and the channel forming region 130 are provided in the same layer. In addition, the source region 111 and the drain region 112, and the source region 131 The gate electrode and the drain region 132 can be provided in the same layer. The wiring 113 and the gate electrode 133 can be provided in the same layer. The wiring 15 and the wiring 117, and the wiring 135 and the wiring 137 may be provided in the same layer. That is, the transistor 871 and the transistor 872 are set in the same layer. This allows the transistor 871 and the transistor 872 to be connected to each other. The manufacturing process of the display device 810 can be simplified compared to when the display device 810 is provided in a different layer. The device 810 can be low cost.

[0195] Wiring electrically connected to the transistor 871 that configures the gate driver circuit 821 The wirings 121 to 123 are provided in the same layer. The wirings 141 to 142 are electrically connected to the transistor 872 included in the transistor 822. The wirings 121 to 123 are provided in the same layer. The gate driver circuit 82 is provided in a layer different from the wirings 41 to 143. 1 and a transistor 871 which is an element constituting the source driver circuit 822. This can prevent an electrical short circuit between the transistor 872 and the transistor 873. Therefore, the gate driver circuit 821 and the source driver circuit 822 are not clearly separated but overlap each other. Even if the gate driver circuit 821 and the source driver circuit 822 have the same area, malfunctions of the gate driver circuit 821 and the source driver circuit 822 may occur. This can reduce the reliability of the display device 810.

[0196] In this specification, the term "the same layer as A" refers to, for example, the same layer formed in the same process as A. It means a layer having one material.

[0197] In FIG. 20, wirings 141 to 143 are provided above wirings 121 to 123. The wiring 121 to the wiring 123 are arranged in a layer below the wiring 141 to the wiring 143. may be provided.

[0198] In addition, in FIG. 20, the wirings 121 to 123 extend in the horizontal direction, and the wirings 141 to 143 extend in the horizontal direction. Although 43 shows a configuration in which the film extends in the vertical direction, one embodiment of the present invention is not limited to this. For example, the wirings 121 to 123 are extended vertically, and the wirings 141 to 143 are extended horizontally. Alternatively, the wirings 121 to 123 and the wirings 141 to 144 may be configured to extend in the same direction. Both of the wirings 143 may extend horizontally or vertically.

[0199] The dummy transistor 873 includes a semiconductor 151 and a conductor 152. 2 has a region overlapping with the semiconductor 151. The semiconductor 151 includes the transistor 871 and the transistor The conductor 1 can be formed in the same layer as the channel forming region of the transistor 872. 52 is formed in the same layer as the gate electrodes of the transistors 871 and 872. The dummy transistor 873 can be formed by using one of the semiconductor 151 and the conductor 152. It may also be configured without the side.

[0200] The semiconductor 151 and the conductor 152 may be configured not to be electrically connected to other wirings or the like. A constant potential may be applied to the semiconductor 151 and / or the conductor 152. For example, A ground potential may be supplied.

[0201] <Configuration example of pixel 834> 21A to 21E show the colors of the pixels 834 provided in the display device 810. As shown in FIG. 21(A), a display having a function of emitting red light (R) is shown. a pixel 834 having a function of emitting green light (G), and a pixel 834 having a function of emitting blue light (B); A pixel 834 having this function can be provided in the display device 810. As shown in FIG. 1, a pixel 834 has a function of emitting cyan (C) light, a pixel 835 has a function of emitting magenta (M) light, and a pixel 836 has a function of emitting cyan (C) light. A pixel 834 having a function of emitting light, and a pixel 835 having a function of emitting yellow (Y) light 834 may be provided on the display device 810.

[0202] Alternatively, as shown in FIG. 21(C), a pixel 834 having a function of emitting red light (R), a pixel 835 having a function of emitting green light (G), A pixel 834 having a function of emitting color light (G), a pixel 835 having a function of emitting blue light (B), The display device 810 is provided with a pixel 834 having a function of emitting white light (W), and a pixel 834 having a function of emitting white light (W). Alternatively, as shown in FIG. 21(D), it may have a function of emitting red light (R). a pixel 834 having a function of emitting green light (G), a pixel 834 having a function of emitting blue light (B), and a pixel 834 having a function of emitting yellow (Y) light. Alternatively, as shown in FIG. 21(E), a cyan (C Pixel 834 having a function of emitting light of blue (M), pixel 834, a pixel 834 having a function of emitting yellow (Y) light, and a pixel 834 having a function of emitting white light (W). The display device 810 may include a pixel 834 having the function of outputting light.

[0203] As shown in FIGS. 21(C) and 21(E), a pixel 834 having a function of emitting white light (W) is By providing the display device 810 with the LED, the brightness of the displayed image can be increased. 21(D), by increasing the number of colors that the pixel 834 can display, intermediate colors can be reproduced. Since the display performance can be improved, the display quality can be improved.

[0204] As shown in FIG. 21(F), the display device 810 has a function of emitting red light (R). a pixel 834 having the function of emitting green light (G), a pixel 834 having the function of emitting blue light (B), In addition to the pixel 834 having the function of emitting infrared light (IR), Alternatively, as shown in FIG. 21(G), the display device 810 may have a cyan (C) a pixel 834 having a function of emitting magenta (M) light; In addition to the pixel 834 having the function of emitting yellow (Y) light, there is also a pixel 834 that emits infrared light (IR). The display device 810 may have a pixel 834 having a function of outputting the light. In addition to the pixel 834 shown in (G), there is a pixel 834 that has the function of emitting white light (W). That's fine.

[0205] 22(A) and (B) are circuit diagrams showing an example of the configuration of the pixel 834. The pixel 834 includes a transistor 552, a transistor 554, a capacitor 562, and , and a light-emitting element 572. The light-emitting element 572 may be, for example, an electroluminescent element. An EL element that uses a light-emitting diode between a pair of electrodes can be applied. The EL element has a layer containing the compound (hereinafter also referred to as an EL layer). When a potential difference greater than the threshold voltage is generated, holes are injected into the EL layer from the anode side, and the cathode Electrons are injected from the electrode side. The injected electrons and holes recombine in the EL layer, forming a The luminescent material contained therein emits light.

[0206] EL elements are also classified according to whether the light-emitting material is an organic compound or an inorganic compound. Generally, the former is called an organic EL element, and the latter is called an inorganic EL element.

[0207] When a voltage is applied to an organic EL element, electrons are emitted from one electrode and holes are emitted from the other electrode. are injected into the EL layer, and then the carriers (electrons and holes) recombine. This causes the luminescent organic compound to form an excited state, and when this excited state returns to the ground state, Due to this mechanism, such a light-emitting element is called a current-excited light-emitting element. It is called.

[0208] In addition to the light-emitting compound, the EL layer may contain a material having a high hole injection property and a material having a high hole transport property. , hole blocking material, material with high electron transporting properties, material with high electron injecting properties, or bipolar material The layer may contain a substance (a substance having high electron-transporting and hole-transporting properties), or the like.

[0209] The EL layer can be produced by deposition (including vacuum deposition), transfer, printing, inkjet, coating, etc. It can be formed by the method described above.

[0210] Inorganic EL elements are divided into dispersion-type inorganic EL elements and thin-film-type inorganic EL elements depending on the element structure. Dispersion-type inorganic EL elements have a light-emitting layer in which particles of a light-emitting material are dispersed in a binder. The emission mechanism is a donor-acceptor interaction that utilizes the donor and acceptor levels. Thin-film inorganic EL devices sandwich the light-emitting layer between dielectric layers. Furthermore, this structure is sandwiched between electrodes, and the light emission mechanism utilizes the inner-shell electron transition of metal ions. It is a localized emission that uses

[0211] The light-emitting element only needs to have at least one of the pair of electrodes transparent in order to extract light. Then, a transistor and a light emitting element are formed on the substrate, and light is emitted from the surface opposite to the substrate. Top emission structure, which emits light from the top surface of the substrate, and bottom emission structure, which emits light from the bottom surface of the substrate. bottom emission structure, and dual emission structure that emits light from both sides There are light emitting elements with a light-emitting structure, and any light emitting element with an emission structure can be applied.

[0212] For light-emitting elements other than the light-emitting element 572, elements similar to the light-emitting element 572 are used. It is possible.

[0213] One of the source and the drain of the transistor 552 is electrically connected to the wiring 832. The other of the source and the drain of the transistor 552 is connected to one electrode of a capacitor 562. and the gate of the transistor 554. The gate of the transistor 552 is electrically connected to the wiring 835a. 31. One of the source and drain of the transistor 554 is electrically connected to the The other of the source and drain of the transistor 554 is electrically connected to the line 835a. The light-emitting element 572 is electrically connected to one of the electrodes thereof. The electrode is electrically connected to the wiring 835b. The wiring 835a is supplied with a potential VSS. The wiring 835a and the wiring 835b are connected to a power supply line. It has the function as.

[0214] In the pixel 834 having the configuration shown in FIG. 22A, the voltage supplied to the gate of the transistor 554 is The current flowing through the light emitting element 572 is controlled in accordance with the position of the light emitting element 572. The light emission brightness is controlled.

[0215] FIG. 22B shows a different configuration from the pixel 834 shown in FIG. 22A. In the pixel 834 having the configuration shown in FIG. 1, one of the source and drain of the transistor 552 is The other of the source and drain of the transistor 552 is electrically connected to the wiring 832. is electrically connected to one electrode of the capacitor 562 and the gate of the transistor 554. The gate of the transistor 552 is electrically connected to the wiring 831. One of the source and the drain of the transistor 554 is electrically connected to the wiring 835a. The other of the source and the drain of the transistor 554 is connected to the other electrode of the capacitor 562, It is electrically connected to one electrode of the light emitting element 572. The other electrode of the light emitting element 572 is The wiring 835a is electrically connected to the wiring 835b. A potential VDD is supplied to the wiring 835a. The line 835b is supplied with the potential VSS.

[0216] FIG. 23A shows an example of the configuration of a pixel 834, which differs from FIG. 22A and FIG. 2 in that it has a memory. 2(B) and the pixel 834 shown in FIG. A transistor 511, a transistor 513, a transistor 521, a capacitor 515, a capacitor The pixel 834 has a function as a scanning line. The wiring 831 is electrically connected to the wiring 831_1 and the wiring 831_2, and the data line The wiring 832 has a function of electrically connecting the wiring 832_1 and the wiring 832_2. It continues.

[0217] One of the source and the drain of the transistor 511 is electrically connected to the wiring 832_1. The other of the source and the drain of the transistor 511 is connected to one of the electrodes of the capacitor 515. The gate of the transistor 511 is electrically connected to the wiring 831_1. One of the source and the drain of the transistor 513 is connected to the wiring 832_2. The other of the source and the drain of the transistor 513 is electrically connected to a capacitor. The gate of the transistor 513 is electrically connected to the other electrode of the transistor 515. The other electrode of the capacitor 515 is electrically connected to the capacitor 517. One electrode of the capacitor 517 is electrically connected to one electrode of the transistor The source or drain of the transistor 521 is electrically connected to the gate of the transistor 521. One of the electrodes of the capacitor 517 is electrically connected to one of the electrodes of the light-emitting element 572. The electrode of the transistor 521 is electrically connected to the wiring 535. The other electrode of the light-emitting element 572 is electrically connected to the wiring 537. It is electrically connected to wiring 539 .

[0218] In this specification, the voltage supplied to a light emitting element refers to the voltage applied to one electrode of the light emitting element. The potential difference between the potential applied to the other electrode of the light-emitting element and the potential applied to the other electrode of the light-emitting element is shown.

[0219] The other of the source and the drain of the transistor 511 and one electrode of the capacitor 515 are The electrically connected node is referred to as node N1. The other electrode of the capacitor 517, the gate of the transistor 521, and the other electrode of the capacitor 517 are electrically connected to each other. The node connected to the capacitor 517 is referred to as a node N2. A circuit including the transistor 521 and the light-emitting element 572 is referred to as a circuit 401. .

[0220] The wiring 535 is a common wiring for, for example, all pixels 834 provided in the display device 810. In this case, the potential supplied to the wiring 535 is a common potential. A constant potential can be supplied to the wiring 537 and the wiring 539. For example, A high potential can be supplied to the wiring 531, and a low potential can be supplied to the wiring 539. The wiring 537 and the wiring 539 function as a power supply line.

[0221] The transistor 521 has a function of controlling current supplied to the light-emitting element 572. The capacitor 517 functions as a storage capacitor. The capacitor 517 may be omitted.

[0222] In FIG. 23A, the anode side of the light emitting element 572 is electrically connected to the transistor 521. However, the transistor 521 may be electrically connected to the cathode side. In this case, the potential values ​​of the wiring 537 and the wiring 539 can be changed as appropriate. Cut.

[0223] The pixel 834 maintains the potential of the node N1 by turning off the transistor 511. In addition, when the transistor 513 is turned off, the potential of the node N2 Furthermore, the transistor 513 is turned off, and the transistor By writing a predetermined potential to the node N1 via the capacitor 511, the capacitance By this coupling, the potential of the node N2 can be changed in response to the change in the potential of the node N1. do.

[0224] Here, the transistors 511 and 513 have metal oxide films in their channel formation regions. A transistor having an OS transistor (hereinafter also referred to as an OS transistor) can be used. The metal oxide can have a band gap of 2 eV or more, or 2.5 eV or more. Therefore, the OS transistor has an extremely small leakage current (off-state current) when it is off. Therefore, OS transistors are used as the transistors 511 and 513. By using this, the potentials of the nodes N1 and N2 can be maintained for a long period of time. Cut.

[0225] As metal oxides, In-M-Zn oxides (element M is aluminum, gallium, or zinc) Sodium, tin, copper, vanadium, beryllium, boron, titanium, iron, nickel, germanium Zirconium, molybdenum, lanthanum, cerium, neodymium, hafnium, tantalum tungsten, magnesium, or the like) In particular, the element M may be aluminum, gallium, yttrium, or tin. In addition, metal oxides such as indium oxide, zinc oxide, In-Ga oxide, and I n-Zn oxide, Ga-Zn oxide, or gallium oxide may also be used.

[0226] [Example of how pixel 834 operates] Next, an example of an operation method of the pixel 834 having the configuration shown in FIG. 23(A) will be described with reference to FIG. 23(B). FIG. 23B shows the timing of the operation of the pixel 834 having the configuration shown in FIG. 23A. For ease of explanation, various resistances such as wiring resistance, The influence of parasitic capacitance of transistors and wiring, and the threshold voltage of transistors, etc. is not taken into account. .

[0227] In the operation shown in FIG. 23(B), one frame period is divided into a period T1 and a period T2. Period T1 is a period during which a potential is written to node N2, and period T2 is a period during which a potential is written to node N1. It is between.

[0228] In the period T1, transistors are turned on in both the wiring 831_1 and the wiring 831_2. A fixed potential V ref Supply and distribute The line 832_2 has a potential V w supply.

[0229] The node N1 is supplied with a potential V ref is supplied The node N2 is supplied with a potential V w Therefore, the potential difference V w -V ref is maintained This becomes:

[0230] Subsequently, in a period T2, a potential that turns on the transistor 511 is supplied to the wiring 831_1. A potential that turns off the transistor 513 is supplied to the wiring 831_2. The wiring 832_1 has a potential V data and a predetermined constant potential is supplied to the wiring 832_2. Note that the potential of the wiring 832_2 may be floating.

[0231] The node N1 is connected to the potential V data is supplied. At this time, The potential V data The potential of the node N2 changes to the potential That is, the potential V w The potential obtained by adding the potential dV is input. Although dV is shown as a positive value in FIG. 23(B), it can also be a negative value. That is, the potential V data is the potential V ref It may be lower.

[0232] Here, the potential dV is roughly determined by the capacitance value of the capacitor 515 and the capacitance value of the circuit 401. When the capacitance of the capacitor 515 is sufficiently larger than the capacitance of the circuit 401, the potential d V is the potential difference V data -V ref The potential is close to

[0233] In this way, pixel 834 combines two types of data signals to provide a voltage to node N2. Therefore, the image displayed on the pixel array 833 can be generated inside the pixel 834. Here, one of the two types of data signals is the image signal mentioned above. The other of the two types of data signals can be, for example, a correction signal. , the potential V corresponding to the correction signal during the period T1 w is supplied to node N2, and then in period T2, the image signal The potential V corresponding to the signal data is supplied to node N1, the pixel array 833 The image to be displayed can be an image signal corrected by a correction signal. Not only the image signal but also the correction signal etc. are generated by the source driver circuit 822 of the display device 810. It can be generated by

[0234] In addition, in the pixel 834 having the configuration shown in FIG. 23A, the potential of the node N2 is connected to the wiring 832_1 and The potential can be set to a value exceeding the maximum potential that can be supplied to the wiring 832_2. A high voltage can be supplied to the light-emitting element 572. Specifically, for example, Therefore, when the light emitting element 572 is an organic EL element, The light emitting element 572 can be configured in a tandem structure, which will be described later. The external quantum efficiency can be increased, and therefore, a high-brightness image can be displayed on the display device 810. In addition, the power consumption of the display device 810 can be reduced.

[0235] It should be noted that the circuit is not limited to the circuit shown in FIG. 23(A), and a circuit may be implemented by adding a separate transistor, a capacitor, or the like. For example, a transistor and a capacitor may be added to the structure shown in FIG. By adding one each, the number of nodes that can hold potential can be increased to three. In other words, there are other nodes that can hold the potential other than the node N1 and the node N2. One of the transistors can be provided in the pixel 834. This further reduces the potential of the node N2. Therefore, a larger current can be passed through the light emitting element 572. This can be done.

[0236] 24A to 24E are diagrams showing examples of the configuration of a circuit 401 that is different from that shown in FIG. 23A. The circuit 401 shown in FIG. 24A has the same configuration as the circuit 401 shown in FIG. The pixel includes a capacitor 517, a transistor 521, and a light-emitting element 572.

[0237] In the circuit 401 having the configuration shown in FIG. 24A, the node N2 is connected to a The gate and one electrode of the capacitor 517 are electrically connected to each other. One of the source and the drain of the transistor 1 is electrically connected to a wiring 537. The other of the source and drain of the capacitor 521 is electrically connected to the other electrode of the capacitor 517. The other electrode of the capacitor 517 is electrically connected to one electrode of the light-emitting element 572. The other electrode of the light-emitting element 572 is electrically connected to a wiring 539.

[0238] The circuit 401 having the configuration shown in FIG. 24B has the same configuration as the circuit 401 having the configuration shown in FIG. , a capacitor 517 , a transistor 521 , and a light-emitting element 572 .

[0239] In the circuit 401 having the configuration shown in FIG. 24B, the node N2 is connected to a The gate and one electrode of the capacitor 517 are electrically connected to each other. One electrode of the light-emitting element 572 is electrically connected to the wiring 537. The transistor 521 is electrically connected to either the source or the drain of the transistor 521. The other of the source and drain of the capacitor 521 is electrically connected to the other electrode of the capacitor element 517. The other electrode of the capacitor 517 is electrically connected to a wiring 539.

[0240] FIG. 24C shows a case where a transistor 525 is added to the circuit 401 shown in FIG. 5 shows an example of the configuration of the circuit 401. the other of the source and drain of the transistor 521 and the other electrode of the capacitor 517. The other of the source and the drain of the transistor 525 is electrically connected to a light-emitting element. The gate of the transistor 525 is electrically connected to one electrode of the transistor 572. The wiring 541 controls the conduction of the transistor 525. It functions as a scanning line.

[0241] In the pixel 834 having the circuit 401 configured as shown in FIG. 24C, the potential of the node N2 Even if the voltage exceeds the threshold voltage of the transistor 521, the transistor 525 must be turned on. Therefore, no current flows through the light emitting element 572. Therefore, malfunction of the display device 810 can be suppressed. This can be done.

[0242] FIG. 24D shows a case where a transistor 527 is added to the circuit 401 shown in FIG. 24C. 5 shows an example of the configuration of the circuit 401. is electrically connected to the other of the source and the drain of the transistor 521. The other of the source and the drain of the transistor 527 is electrically connected to the wiring 543. The gate of the transistor 527 is electrically connected to the wiring 545. It functions as a scanning line that controls the conduction of the transistor 527 .

[0243] The wiring 543 can be electrically connected to a supply source of a specific potential such as a reference potential. The wiring 543 functions as a power supply line. By supplying a specific potential to the other of the source or drain, an image signal is written to the pixel 834. This can stabilize the writing.

[0244] The wiring 543 can be electrically connected to the circuit 520. a constant potential source, a function for acquiring the electrical characteristics of the transistor 521, and a function for generating a correction signal; The function may be one or more of the following:

[0245] The circuit 401 shown in FIG. 24E includes a capacitor 517, a transistor 521, and a transistor The light emitting element 572 includes a transistor 529 and a light emitting element 572 .

[0246] In the circuit 401 having the configuration shown in FIG. 24E, the node N2 is connected to the The gate and one electrode of the capacitor 517 are electrically connected to each other. One of the source and the drain of the transistor 1 is electrically connected to a wiring 537. One of the source and drain of the transistor 529 is electrically connected to a wiring 543 .

[0247] The other electrode of the capacitor 517 is electrically connected to the other of the source and drain of the transistor 521. The other of the source and drain of the transistor 521 is connected to the The source and drain of the transistor 529 are electrically connected to each other. The other of the source and the drain is electrically connected to one electrode of the light-emitting element 572 .

[0248] The gate of the transistor 529 is electrically connected to the wiring 831_1. The other electrode of the element 72 is electrically connected to a wiring 539 .

[0249] <Display device configuration example 2> FIG. 25 shows a configuration example of a display device 810 in which the pixel 834 has the configuration shown in FIG. 23(A). 25 is a block diagram showing the display device 810 shown in FIG. In addition to the components of 810, a demultiplexer circuit 824 is provided. The circuitry 824 can be provided, for example, in layer 820, as shown in FIG. The number of multiplexer circuits 824 is determined based on, for example, the number of columns of pixels 834 provided in the pixel array 833. The number can be the same as the number of

[0250] The gate driver circuit 821 is electrically connected to the pixel 834 via a wiring 831-1. The gate driver circuit 821 is electrically connected to the pixel 834 via the wiring 831-2. The wiring 831-1 and the wiring 831-2 function as scanning lines.

[0251] The source driver circuit 822 is electrically connected to the input terminal of the demultiplexer circuit 824. The first output terminal of the demultiplexer circuit 824 is connected to the image signal line 832-1. The second output terminal of the demultiplexer circuit 824 is electrically connected to the element 834. The wiring 832-1 and the wiring 832-2 are electrically connected to the pixel 834. 832-2 functions as a data line.

[0252] The source driver circuit 822 and the demultiplexer circuit 824 are collectively referred to as a source That is, the demultiplexer circuit 824 may be called a source driver circuit. It may be included in circuit 822.

[0253] In the display device 810 having the configuration shown in FIG. 25, a source driver circuit 822 receives an image signal S The demultiplexer circuit 824 has a function of generating the image signal S1 and the image signal S2. 2-1 to supply an image signal S1 to the pixel 834, and 25. Here, the display of the configuration shown in FIG. If the device 810 is operated in the manner shown in FIG. 23(B), the potential V data The image signal S1, and the potential V w is set to the potential corresponding to the image signal S2. This can be done.

[0254] As shown in FIG. 23B, the node N2 is supplied with a potential V w After supplying the potential V d ata By supplying w +dV”. Here, as mentioned above As shown, the potential dV is the potential V data Therefore, the image signal S2 has a potential corresponding to the image In other words, the image signal S1 can be superimposed on the image signal S2. It is possible.

[0255] Potential V corresponding to image signal S1 data , and the potential V corresponding to the image signal S2 w Size is limited depending on the withstand voltage of the source driver circuit 822. By superimposing the image signal S2, the potential that the source driver circuit 822 can output is An image corresponding to an image signal with a high potential can be displayed on the pixel array 833. This allows a large current to flow through the light emitting element 572, so that a high brightness image can be displayed on the pixel array 8 33. Also, the brightness of the image that the pixel array 833 can display This allows for an expansion of the dynamic range, which is the range of the degree of contrast.

[0256] The image corresponding to the image signal S1 and the image corresponding to the image signal S2 may be the same or different. An image corresponding to the image signal S1 and an image corresponding to the image signal S2 may be If they are the same, the pixel array 833 stores the luminance of the image corresponding to the image signal S1 and the image An image with a higher brightness than the image corresponding to the signal S2 can be displayed.

[0257] FIG. 26 shows an example in which an image P1 corresponding to an image signal S1 is an image containing only text, and an image signal S2 In this case, the image P2 corresponding to the image P1 is an image containing pictures and characters. By superimposing image P1 and image P2, the brightness of the characters can be increased. 23B, the node N2 is applied with a potential V w Written by After the voltage at node N2 is data Since it changes depending on The potential V corresponding to S2 w When rewriting, the potential V of the image signal S1 data Rewrite On the other hand, the potential V data When rewriting, use the The charge written to the node N2 at time T1 leaks from the transistor 513 and the like. As long as it is held steady, the potential V w Therefore, in the case shown in Figure 26, At this point, the potential V data You can adjust the brightness of the text by adjusting the value of do.

[0258] Here, as described above, the potential V corresponding to the image signal S2 w When rewriting the image signal The potential V corresponding to S1 data On the other hand, the potential V data When rewriting, the potential V wTherefore, image P2 does not need to be rewritten. It is preferable to use an image that is rewritten less frequently. Note that image P1 contains only text. The image P2 is not limited to an image containing pictures and text.

[0259] <Example of cross-sectional configuration of display device> 27 is a cross-sectional view showing an example of the configuration of a display device 810. The display device 810 includes a substrate 701 and a substrate 705, and the substrate 701 and the substrate 705 are bonded together by a sealing material 712. There are.

[0260] A single crystal semiconductor substrate such as a single crystal silicon substrate can be used as the substrate 701. The substrate 701 may be a semiconductor substrate other than a single crystal semiconductor substrate.

[0261] The transistor 441 and the transistor 601 are provided on a substrate 701. The transistor 441 can be a transistor provided in the circuit 840. 01 denotes a transistor provided in the gate driver circuit 821 or a source driver circuit That is, the transistors 441 and 822 can be used as the transistors. The transistor 601 can be provided in the layer 820 shown in FIG.

[0262] The transistor 441 includes a conductor 443 that functions as a gate electrode and a gate insulator and a part of the substrate 701, and the channel forming region a semiconductor region 447 including a low-pressure region having a function as one of a source region and a drain region; A low resistance region 449a having a function as the other of the source region or the drain region The transistor 441 has a region 449b. The transistor 441 can be either a p-channel or n-channel transistor. That's fine too.

[0263] The transistor 441 is electrically isolated from other transistors by an element isolation layer 403. In FIG. 27, the transistor 441 and the transistor 601 are separated by the element isolation layer 403. The device isolation layer 403 is formed by LOCOS (LOCal Oxidation of Silicon (STI) method or Shallow Tre The insulating film can be formed by using a method such as nch isolation.

[0264] Here, the semiconductor region 447 of the transistor 441 shown in FIG. The conductor 443 covers the side and top surfaces of the semiconductor region 447 with the insulator 445 interposed therebetween. 27, the conductor 443 covers the side surface of the semiconductor region 447. The conductor 443 may be made of a material that adjusts the work function. do.

[0265] A transistor having a convex semiconductor region such as the transistor 441 is formed by Since it uses a protruding portion, it can be called a fin transistor. Even if there is an insulator in contact with the upper part and functioning as a mask for forming the convex part, In addition, although FIG. 27 shows a configuration in which a protrusion is formed by processing a part of the substrate 701, Alternatively, a semiconductor having a convex shape may be formed by processing an SOI substrate.

[0266] Note that the configuration of the transistor 441 shown in FIG. 27 is an example, and the present invention is not limited to this configuration. An appropriate configuration may be selected depending on the circuit configuration or the operation method of the circuit. For example, transistor 4 41 may be a planar transistor.

[0267] The transistor 601 can have a structure similar to that of the transistor 441 .

[0268] On the substrate 701, an element isolation layer 403, a transistor 441, and a transistor 60 are provided. In addition to the insulator 1, an insulator 405, an insulator 407, an insulator 409, and an insulator 411 are provided. Conductors 451 in the insulators 405, 407, 409, and 411 Here, the height of the top surface of the conductor 451 and the height of the top surface of the insulator 411 are It can be done to the same extent.

[0269] An insulator 413 and an insulator 415 are provided on the conductor 451 and the insulator 411. In addition, a conductor 457 is embedded in the insulator 413 and the insulator 415. 7 can be provided in the same layer as the wirings 121 to 123 shown in FIG. Here, the height of the upper surface of the conductor 457 and the height of the upper surface of the insulator 415 can be made approximately the same.

[0270] An insulator 417 and an insulator 419 are provided on the conductor 457 and the insulator 415. In addition, a conductor 459 is embedded in the insulator 417 and the insulator 419. 9 can be provided in the same layer as the wirings 141 to 143 shown in FIG. Here, the height of the upper surface of the conductor 459 and the height of the upper surface of the insulator 419 can be made approximately the same.

[0271] An insulator 421 and an insulator 214 are provided on the conductor 459 and the insulator 419. The conductor 453 is embedded in the insulator 421 and the insulator 214. The height of the upper surface of 53 and the height of the upper surface of insulator 214 can be made to be approximately the same.

[0272] An insulator 216 is provided on the conductor 453 and on the insulator 214. The conductor 455 is buried in the insulating layer 216. The height of the surfaces can be made the same.

[0273] On the conductor 455 and on the insulator 216, an insulator 222, an insulator 224, an insulator 254, an insulator An edge 244, an insulator 280, an insulator 274, and an insulator 281 are provided. 2, Insulator 224, Insulator 254, Insulator 244, Insulator 280, Insulator 27 A conductor 305 is embedded in the insulating material 281 and the insulating material 282. The height of the surface and the height of the upper surface of the insulator 281 can be made approximately the same.

[0274] An insulator 361 is provided on the conductor 305 and on the insulator 281. The conductor 317 and the conductor 337 are buried. The height of the upper surface of the insulator 361 can be made to be approximately the same.

[0275] An insulator 363 is provided on the conductor 337 and on the insulator 361. The conductor 347, the conductor 353, the conductor 355, and the conductor 357 are embedded. , the height of the upper surfaces of the conductors 353, 355, and 357, and the upper surface of the insulator 363 The height can be made to be the same.

[0276] A connection electrode 76 is formed on the conductor 353, the conductor 355, the conductor 357, and the insulator 363. 0 is provided. An anisotropic conductor 780 is provided so as to be electrically connected to the connection electrode 760. and an FPC (Flexible Printed Circuit) is provided to be electrically connected to the anisotropic conductor 780. The FPC 716 is provided with a display. Various signals and the like are supplied to the display device 810 from outside the device 810.

[0277] As shown in FIG. 27, the other of the source region and the drain region of the transistor 441 The functional low resistance region 449b includes the conductors 451, 457, 459, and Conductor 453, conductor 455, conductor 305, conductor 317, conductor 337, conductor 347, The conductor 353, the conductor 355, the conductor 357, the connection electrode 760, and the anisotropic conductor 780 27, the connecting electrode 760 is electrically connected to the FPC 716. and the conductor 347, the conductor 353, the conductor 3 55 and the conductor 357 are shown, one embodiment of the present invention is not limited to these. There may be one conductor that has the function of electrically connecting the electrode 760 and the conductor 347, The number of the connection electrodes 760 and the conductors 347 may be two or four or more. By providing a plurality of conductors having a connecting function, contact resistance can be reduced.

[0278] A transistor 750 is provided on the insulator 214. The transistor 750 is 34. That is, the transistor 750 can be the transistor provided in FIG. The transistor 750 may be an OS transistor. An OS transistor is characterized by extremely low off-state current. Therefore, the retention time of image signals etc. can be extended, and the frequency of refresh operations can be reduced. Therefore, the power consumption of the display device 810 can be reduced.

[0279] Insulators 254, 244, 280, 274, and 281 Conductor 301a and conductor 301b are embedded in the The conductor 301b is electrically connected to either the source or the drain of the transistor 750. The conductor is electrically connected to the other of the source and drain of the transistor 750. The height of the upper surface of the conductor 301a and the upper surface of the insulator 281 can be made to be approximately the same. Cut.

[0280] A conductor 311, a conductor 313, a conductor 331, a capacitor element 790, and a conductor The conductors 311 and 313 are buried in the transistor. The conductor 333 and the conductor 334 are electrically connected to the conductor 750 and function as wiring. 35 is electrically connected to the capacitor element 790. Here, the conductor 331 and the conductor 33 3, and the height of the upper surface of the conductor 335 and the height of the upper surface of the insulator 361 can be made to be approximately the same.

[0281] The conductor 341, the conductor 343, and the conductor 351 are embedded in the insulator 363. Therefore, the height of the upper surface of the conductor 351 and the height of the upper surface of the insulator 363 can be made approximately the same.

[0282] Insulator 405, insulator 407, insulator 409, insulator 411, insulator 413, insulator 41 5, insulator 417, insulator 419, insulator 421, insulator 214, insulator 280, insulator 274, the insulator 281, the insulator 361, and the insulator 363 function as interlayer films. , and may function as a planarizing film that covers the underlying uneven shapes. The top surface of the insulator 363 is polished by chemical mechanical polishing (CMP) to improve flatness. The surface is flattened by a flattening process using a method such as Mechanical Polishing. It may also be used.

[0283] As shown in FIG. 27, the capacitance element 790 has a lower electrode 321 and an upper electrode 325. In addition, an insulator 323 is provided between the lower electrode 321 and the upper electrode 325. That is, the capacitor element 790 has an insulator 323 sandwiched between a pair of electrodes, which functions as a dielectric. 27 shows an example in which a capacitor 790 is provided on an insulator 281. As shown, the capacitor 790 may be provided on an insulator different from the insulator 281 .

[0284] In FIG. 27, the conductor 301a, the conductor 301b, and the conductor 305 are formed in the same layer. In addition, the conductor 311, the conductor 313, the conductor 317, and the lower electrode 3 shows an example in which the conductor 331, the conductor 333, and the electrode 321 are formed in the same layer. In this example, the conductor 335 and the conductor 337 are formed in the same layer. 3 shows an example in which the conductive layer 341, the conductive layer 343, and the conductive layer 347 are formed in the same layer. The conductor 351, the conductor 353, the conductor 355, and the conductor 357 are formed in the same layer. In this way, by forming multiple conductors on the same layer, Since the manufacturing process of the device 810 can be simplified, the display device 810 can be manufactured at low cost. These may be formed in different layers, and different types of The material may be

[0285] The display device 810 shown in FIG. 27 has a light-emitting element 572. The light-emitting element 572 is The light emitting device 702 includes an EL layer 786 and a conductor 788. The conductor 788 is provided on the substrate 705 side. The conductor 772 is connected to the conductor 351 and the conductor 3 41, the conductor 331, the conductor 313, and the conductor 301b, and the transistor 750 The conductor 772 is electrically connected to the other of the source and drain of the insulator 363. The EL layer 786 is formed on the insulating film 782 and functions as a pixel electrode. It has inorganic compounds such as quantum dots.

[0286] Materials that can be used for the organic compound include fluorescent materials and phosphorescent materials. In addition, materials that can be used for quantum dots include colloidal quantum dot materials, Examples include alloy-type quantum dot materials, core-shell-type quantum dot materials, and core-type quantum dot materials. can be done.

[0287] In the display device 810 shown in FIG. 27, an insulator 730 is provided on an insulator 363. The insulator 730 can cover part of the conductor 772. The light-transmitting conductor 788 is included in the light-transmitting element 572, and the light-emitting element 572 can be a top-emission type light-emitting element. The light emitting element 572 has a bottom emission structure that emits light to the conductor 772 side. or a dual emission structure in which light is emitted to both the conductor 772 and the conductor 788. You may do so.

[0288] The light emitting element 572 can have a microcavity structure, as will be described in more detail below. This makes it possible to extract light of a specific color (for example, RGB) without providing a colored layer. In this case, the display device 810 can display in color. This makes it possible to suppress the absorption of light by the colored layer. It is possible to display a high brightness image and reduce the power consumption of the display device 810. The EL layer 786 can be formed in an island shape for each pixel or in a stripe shape for each pixel row, that is, by coating. Even in the case of forming the colored layer separately, the colored layer may not be provided.

[0289] The light-shielding layer 738 is provided so as to have a region overlapping with the insulator 730. The light-shielding layer 738 is covered with the insulator 734. The gap is filled with a sealing layer 732 .

[0290] Furthermore, a structure 778 is provided between the insulator 730 and the EL layer 786. A structure 778 is provided between the body 730 and the insulator 734. The structure 778 is a columnar structure. It has a function of controlling the distance (cell gap) between the substrate 701 and the substrate 705. Note that a spherical spacer may be used as the structure 778.

[0291] On the substrate 705 side, a light-shielding layer 738 and an insulator 734 in contact therewith are provided. The layer 738 has a function of blocking light emitted from the adjacent region. , has the function of blocking external light from reaching the transistor 750 and the like.

[0292] FIG. 28 shows a modification of the display device 810 shown in FIG. 27, which is different from the modification in that a colored layer 736 is provided. 27. By providing the colored layer 736, the light emitting element 57 2 can improve the color purity of the light extracted from the display device 810. In addition, for example, all the light emitting elements 57 of the display device 810 can be displayed. 2 can be used as a light-emitting element that emits white light. This does not necessarily require the formation of a pixel, and the display device 810 can have high definition.

[0293] 27 and 28, the transistor 441 and the transistor 601 are disposed in the substrate 701. The transistor 441 and the transistor 6 are provided so that a channel formation region is formed in the region. In the above example, an OS transistor is stacked on the semiconductor substrate 01. 29 is a modification of FIG. 27, and FIG. 30 is a modification of FIG. 28. 41 and transistor 601, but transistors 602 and 603 which are OS transistors. The transistor 750 is stacked on the transistor 603, as shown in FIG. 29 and 30. The display device 810 includes stacked OS transistors.

[0294] An insulator 613 and an insulator 614 are provided on the substrate 701, and a transistor is provided on the insulator 614. A resistor 602 and a transistor 603 are provided. For example, a transistor or the like may be provided between the substrate 701 and the insulator 61. 3 and the transistor 441 and the transistor 601 shown in FIGS. 27 and 28. A transistor having a similar configuration may be provided.

[0295] The transistor 602 may be a transistor provided in the circuit 840. The resistor 603 is a transistor or a source driver provided in the gate driver circuit 821. In other words, the transistor 6 can be a transistor provided in the driver circuit 822. The transistor 602 and the transistor 603 can be provided in the layer 820 shown in FIG. 12, when circuit 840 is provided on layer 830, transistor 60 2 may be provided on layer 830.

[0296] The transistor 602 and the transistor 603 are transistors having the same configuration as the transistor 750. The transistor 602 and the transistor 603 can be a transistor. An OS transistor having a different structure from that of the transistor 750 may be used.

[0297] The transistor 602 and the transistor 603 are disposed on the insulator 614, as well as the insulator 616, Insulator 622, insulator 624, insulator 654, insulator 644, insulator 680, insulator 67 4, and insulator 681 are provided. The conductor 461 is embedded in the insulator 674 and the insulator 681. The height of the upper surface of the body 461 and the height of the upper surface of the insulator 681 can be made to be approximately the same.

[0298] An insulator 501 is provided on the conductor 461 and on the insulator 681. The conductor 463 is buried in the insulating layer 501. The height of the surfaces can be made the same.

[0299] An insulator 503 is provided on the conductor 463 and on the insulator 501. The conductor 465 is buried in the insulating layer 503. The height of the surfaces can be made the same.

[0300] An insulator 505 is provided over the conductor 465 and the insulator 503. The conductor 467 is embedded in the wiring 121 shown in FIG. The conductor 467 can be provided in the same layer as the wiring 123. The height of the top surface of the insulator 505 can be made to be approximately the same.

[0301] An insulator 507 is provided on the conductor 467 and on the insulator 505. The conductor 469 is buried in the insulating layer 507. The height of the surfaces can be made the same.

[0302] An insulator 509 is provided over the conductor 469 and the insulator 507. The conductor 471 is embedded in the wiring 141 shown in FIG. The conductor 471 can be provided in the same layer as the wiring 143. The height of the upper surface of the insulator 509 can be made to be approximately the same.

[0303] An insulator 421 and an insulator 214 are provided on the conductor 471 and the insulator 509. The conductor 453 is embedded in the insulator 421 and the insulator 214. The height of the upper surface of 53 and the height of the upper surface of insulator 214 can be made to be approximately the same.

[0304] As shown in FIGS. 29 and 30, either the source or the drain of the transistor 602 is conductive. Conductor 461, Conductor 463, Conductor 465, Conductor 467, Conductor 469, Conductor 471 , Conductor 453, Conductor 455, Conductor 305, Conductor 317, Conductor 337, Conductor 3 47, the conductor 353, the conductor 355, the conductor 357, the connection electrode 760, and the anisotropic conductor It is electrically connected to the FPC 716 via 780.

[0305] Insulator 613, insulator 614, insulator 680, insulator 674, insulator 681, insulator 50 1, the insulator 503, the insulator 505, the insulator 507, and the insulator 509 are interlayer films. and may also function as a planarizing film that covers the underlying uneven shapes. .

[0306] By configuring the display device 810 as shown in FIGS. 29 and 30, the display device 810 can be made narrow-frame. The display device 810 is made of OS transistors while being made smaller and more shrunk. This allows, for example, a transistor provided in layer 820 and a transistor provided in layer 830 The transistors provided in the first and second gate electrodes can be manufactured using the same device. The manufacturing cost of the display device 810 can be reduced, making the display device 810 low-cost. It is possible.

[0307] <Configuration example 3 of the display device> 31A and 31B show a subpixel 90 that can be used in the display device of one embodiment of the present invention. 22(B) is a top view showing a configuration example of the sub-pixel 901. Here, the transistor 552 has a back gate in addition to a gate. The gate of the transistor 554 is electrically connected to the wiring 831. In addition, the back gate is connected to the source or drain of the transistor 554. The other electrode of the capacitor 562 and the other electrode of the light-emitting element 572 are electrically connected to each other. It has been done.

[0308] In FIG. 31A, the subpixel 901 includes a transistor, a capacitor, a wiring, and the like. In FIG. 31(B), in addition to the structure shown in FIG. 31(A), The conductor 772 functions as one electrode of the optical element 572. In either case of 1(A) or 1(B), the electrode functions as the other electrode of the light-emitting element 572. Here, one electrode of the light emitting element 572 functions as a pixel electrode. The other electrode of the light-emitting element 572 functions as a common electrode.

[0309] As shown in FIGS. 31A and 31B, the subpixel 901 includes a conductor 911, a conductor 912, and a , semiconductor 913, semiconductor 914, conductor 915a, conductor 915b, and conductor 91 6a, conductor 916b, conductor 917, conductor 918, conductor 919, and conductor 920, conductor 921, conductor 922, conductor 923, conductor 924, and conductor 925, conductor 926, conductor 927, conductor 928, conductor 929, and conductor 930, a conductor 931, and a conductor 772.

[0310] The conductor 911 and the conductor 912 can be formed in the same process. The conductor 911 and the semiconductor 914 are formed in the same process, and are formed in a process after the conductor 911 and the conductor 912. Conductors 915a and 915b, and conductors 916a and The conductor 916b is formed in the same process, and is formed in a process after the conductors 911 and 912. The conductor 917 and the conductor 918 are formed in the same process. 913 and semiconductor 914, as well as conductors 915a, 915b, 916a, and The conductor 916b can be formed in a subsequent step.

[0311] The conductors 919 to 923 are formed in the same process, and the conductors 917 and 918 The conductor 924 can be formed in a later step. The conductors 925 to 928 can be formed in the same process. The conductors 929 to 929 can be formed in a process subsequent to the process for forming the conductor 924. 31 is formed in the same process, and is formed in a process after the conductors 925 to 928. The conductor 772 can be formed in a process after the conductors 929 to 931. This can be done.

[0312] In this specification, elements formed in the same process are said to be provided in the same layer. For example, the conductor 911 and the conductor 912 can be formed in the same process. Therefore, it can be said that the conductor 911 and the conductor 912 are provided in the same layer. Elements formed in later processes are placed on top of elements formed in earlier processes. For example, the conductors 929 to 931 can be formed from the conductors 925 to 928. Since the conductors 929 to 931 can be formed in a later step, 5 to 928.

[0313] The conductor 911 functions as a back gate electrode of the transistor 552. The conductor 913 has a channel formation region of the transistor 552. The conductor 915 serves as one of the source and drain electrodes of the transistor 552. b serves as the other of the source electrode and the drain electrode of the transistor 552. The conductor 917 functions as a gate electrode of the transistor 552 .

[0314] The conductor 912 functions as a back gate electrode of the transistor 554. The conductor 914 has a channel formation region of the transistor 554. The conductor 916 serves as one of the source and drain electrodes of the transistor 554. b functions as the other of the source electrode and the drain electrode of the transistor 554. The conductor 918 functions as a gate electrode of the transistor 554 .

[0315] The conductor 919 functions as one electrode of the capacitor 562. The conductor 925 functions as the other electrode of the capacitor 562. The conductor 929 corresponds to the wiring 831 having the function of a data line. The conductor 930 corresponds to the wiring 835a that functions as a power supply line. As described above, the conductor 772 functions as one electrode of the light-emitting element 572. .

[0316] The conductor 911 is electrically connected to the conductor 920. The conductor 912 is electrically connected to the conductor 92 3. The conductor 915a is electrically connected to the conductor 921. The conductor 915b is electrically connected to the conductor 919. The conductor 916a is electrically connected to the conductor 916b. It is electrically connected to the electrical body 922 .

[0317] The conductor 916b is electrically connected to the conductor 923. That is, the transistor 55 The conductor 912 serving as the back gate electrode of the transistor 554 and the source electrode of the transistor 554 are The conductor 916b having the function of the other of the source electrode and the drain electrode is a conductor 923. are electrically connected via

[0318] The conductor 917 is electrically connected to the conductor 920. That is, the transistor 552 the conductor 911 serving as a back gate electrode of the transistor 552; The conductor 917, which functions as an electrode, is electrically connected via the conductor 920. There are.

[0319] The conductor 920 is electrically connected to the conductor 925. That is, the transistor 552 A conductor 917 having a function as a gate electrode of the 925 is electrically connected via a conductor 920.

[0320] The conductor 918 is electrically connected to the conductor 919. The conductor 921 is electrically connected to the conductor 92. 6. Conductor 922 is electrically connected to conductor 927. The conductor 923 is electrically connected to the conductor 928. The conductor 924 is electrically connected to the conductor 9 28 is electrically connected to

[0321] The conductor 926 is electrically connected to the conductor 929. That is, the transistor 552 a conductor 915a that functions as one of the source electrode and the drain electrode of the data line The conductor 929 having the function of is connected to.

[0322] The conductor 927 is electrically connected to the conductor 930. That is, the transistor 554 a conductor 916a functioning as one of a source electrode and a drain electrode of the power supply line; The conductor 930 having the function of the conductor 922 and the conductor 927 are electrically connected to the conductor 930. is connected to.

[0323] The conductor 928 is electrically connected to the conductor 931. The conductor 931 is electrically connected to the conductor 77. 2 is electrically connected to

[0324] The semiconductor 913 and the semiconductor 914 can include, for example, a metal oxide. Transistor 552 and transistor 554 can be OS transistors.

[0325] FIG. 32 shows an example of the configuration of a pixel 902 that is configured using sub-pixels 901 configured as shown in FIG. 31(B). In FIG. 32, the sub-pixel 901R has a function of emitting red light. The subpixel 901G indicates a subpixel 901 having a function of emitting green light. The sub-pixel 901B is a sub-pixel 901 that emits blue light. In this way, the pixel 902 is formed by the subpixels 901R, 901G, and 901B. Specifically, the sub-pixels 901R and 901B provided in the upper row A single pixel 902 is formed by the sub-pixel 901A and the sub-pixel 901G provided in the lower row. In addition, the sub-pixel 901G provided in the upper row and the sub-pixel 901R and A pixel 902 is configured by the sub-pixel 901A and the sub-pixel 901B.

[0326] In FIG. 32, subpixels 901R, 901G, and 901B are provided in the upper row. , and the sub-pixels 901R, 901G, and 901B provided in the lower row are respectively By using this configuration, the scanning lines are Sub-pixels 901 of the same color are arranged alternately in the direction of extension of the conductor 925 having all the functions. This allows one data line to have the function of emitting light of the same color. In other words, the sub-pixels 901R can be electrically connected to each other. Two or more types of sub-pixels 901 among the sub-pixels 901A, 901B, and 901C form one data line. This can prevent the wiring from being electrically connected to the power supply line.

[0327] 33 is a cross-sectional view of the portion indicated by the dashed line A1-A2 in FIG. 31(B). A transistor 552 and a transistor 554 are provided on the transistor 21. An insulator 1022 is provided on the capacitor 552 and the transistor 554. An insulator 1023 is provided on the top. A substrate is provided below the insulator 1021. In addition, the components of the layer 820 shown in FIG. 8 and the like (gate) are provided between the substrate and the insulator 1021. A gate driver circuit 821, a source driver circuit 822, a circuit 840, etc. Cut.

[0328] As shown in FIG. 33, the conductors provided on different layers function as plugs. For example, the conductor 915a and the conductor 915b are electrically connected via the conductor 990. The conductor 921 provided in the layer above 5a is electrically connected via the conductor 990. The conductor 990 is the same as the conductor 453, the conductor 305, and the conductor 337 shown in FIG. , conductor 353, conductor 355, conductor 357, conductor 301a, conductor 301b, conductor The conductor 331, the conductor 351, the conductor 333, and the conductor 335 can have the same configuration. .

[0329] An insulator 1024 is provided over the conductors 919 to 923 and over the insulator 1023. A conductor 924 is provided on the insulator 1024. 24 and the conductor 924 form a capacitor element 562.

[0330] An insulator 1025 is provided over the conductor 924 and the insulator 1024. An insulator 1026 is provided over the conductor 928 and the insulator 1025. An insulator 1027 is provided over the conductors 29 to 931 and the insulator 1026.

[0331] A conductor 772 and an insulator 730 are provided on the insulator 1027. The conductive layer 772 and the EL layer 730 may be configured to cover a part of the conductive layer 772. The light emitting element 572 is composed of the element 86 and the conductor 788 .

[0332] An adhesive layer 991 is provided on the conductor 788, and an insulator 992 is provided on the adhesive layer 991. The insulator 992 on the adhesive layer 991 can be formed by the following procedure. An insulator 992 is formed on a substrate different from the substrate on which the light emitting element 572 and the like are formed. Next, the conductor 788 and the insulator 992 are bonded together by an adhesive layer 991. The substrate on which the insulator 992 is formed is peeled off. It is possible.

[0333] A colored layer 993 is provided on the insulator 992. In FIG. The color layer 993 is provided with an adhesive layer 994. A substrate 995 is bonded to the substrate.

[0334] The colored layer 993b has a function of transmitting light of a color different from that of the colored layer 993a. The pixel 902 has a sub-pixel 901R that has a function of emitting red light, a sub-pixel 902B that has a function of emitting green light, and a sub-pixel 902C that has a function of emitting red light. The sub-pixel 901G has the function of emitting blue light, and the sub-pixel 901B has the function of emitting blue light. If the layer 993a has a function of transmitting red light, the colored layer 993b has a function of transmitting green or blue light. It has the ability to transmit light.

[0335] By forming a colored layer 993 on the insulator 992, the colored layer 993 and the light-emitting element 572 This allows for easy alignment of the display device of one embodiment of the present invention. The degree can be increased.

[0336] <Display device configuration example 4> FIG. 34A shows a configuration of a subpixel 940 that can be used in a display device of one embodiment of the present invention. 9 is a schematic diagram showing an example of a stacked structure of a subpixel 940_1 and a subpixel 940_2. The sub-pixel 940 can have a circuit configuration shown in FIG. Here, the transistor 511 and the transistor 529 have a back gate in addition to the gate. The back gate is electrically connected to the wiring 831_1. The capacitor 513 has a back gate, and the back gate is electrically connected to the wiring 831_2. Furthermore, the transistor 521 has a back gate, which is a capacitance element. The other electrode of the terminal 517 and one electrode of the light-emitting element 572 are electrically connected to each other.

[0337] FIG. 34(B) is a top view showing a configuration example of the sub-pixel 940_1. Conductors and semiconductors that form the transistors, capacitors, wirings, etc. included in the pixel 940_1 This shows:

[0338] As shown in FIG. 34B, the subpixel 940_1 includes a conductor 951, a semiconductor 952, and a semiconductor Conductor 953, conductor 954a, conductor 954b, conductor 955a, and conductor 955 b, conductor 956, conductor 957, conductor 958, conductor 959, and conductor 96 0, conductor 961, conductor 962, conductor 963, conductor 964, and conductor 96 5, a conductor 966, and a conductor 967.

[0339] The semiconductor 952 and the semiconductor 953 are formed in the same process, and are formed in a process after the conductor 951. Conductor 954a and conductor 954b, and conductor 955a and conductor The conductor 955b can be formed in the same process, but in a process after the conductor 951. The conductor 956 and the conductor 957 are formed in the same process, and the semiconductor 952 and the semiconductor 9 53, and conductors 954a, 954b, 955a, and 955b. It can be formed in a later step.

[0340] The conductors 958 to 962 are formed in the same process, and the conductors 956 and 957 The conductor 963 can be formed in a later step. The conductors 964 to 967 can be formed in the same process. The conductor 963 can be formed in a subsequent step.

[0341] The conductor 951 serves as a back gate electrode of the transistor 511 and the transistor 529. The conductor 951 is connected to the wiring 831_1 that functions as a scan line. handle.

[0342] The semiconductor 952 includes a channel formation region of the transistor 511. The conductor 954a The conductor serves as one of a source electrode and a drain electrode of the transistor 511. 954b serves as the other of the source electrode and the drain electrode of the transistor 511. The conductor 956 functions as a gate electrode of the transistor 511.

[0343] The semiconductor 953 includes a channel formation region of the transistor 529. The conductor 955a The conductor serves as one of a source electrode and a drain electrode of the transistor 529. 955b serves as the other of the source electrode and the drain electrode of the transistor 529. The conductor 957 functions as a gate electrode of the transistor 529.

[0344] The conductor 958 functions as one electrode of the capacitor 515. The conductor 964 serves as the other electrode of the capacitor 515. The conductor 965 corresponds to the wiring 832_1 having the function of a power supply line. It corresponds to the wiring 543.

[0345] The conductor 951 is electrically connected to the conductor 962. The conductor 954a is electrically connected to the conductor 962. 59. The conductor 954b is electrically connected to the conductor 958. The conductor 955a is electrically connected to the conductor 960. The conductor 955b is It is electrically connected to the conductor 961.

[0346] The conductor 956 and the conductor 957 are electrically connected to the conductor 962. The transistor 511 and the transistor 529 function as back gate electrodes. The conductor 951 corresponding to the wiring 831_1 having a function as a line is connected to the conductor 962. The conductor 956 serving as the gate electrode of the transistor 511 and the It is electrically connected to a conductor 957 which functions as the gate electrode of the gate electrode 529 .

[0347] The conductor 959 is electrically connected to the conductor 964. That is, the transistor 511 a conductor 954a functioning as one of the source and drain of the The functional conductor 964 is electrically connected via the conductor 959 .

[0348] The conductor 960 is electrically connected to the conductor 965. That is, the transistor 529 a conductor 955a that functions as one of the source and drain of the The functional conductor 965 is electrically connected via the conductor 960.

[0349] The conductor 961 is electrically connected to the conductor 967. The conductor 963 is electrically connected to the conductor 96 6 and is electrically connected to

[0350] The semiconductor 952 and the semiconductor 953 can include, for example, a metal oxide. The transistor 511 and the transistor 529 can be OS transistors.

[0351] In FIG. 35A, the transistors, capacitors, wirings, and the like included in the subpixel 940_2 are In FIG. 35(B), in addition to the structure shown in FIG. 35(A), , a conductor 772 that functions as one electrode of the light-emitting element 572 is shown. In both of FIGS. 35(A) and (B), the function of the other electrode of the light emitting element 572 is The conductors and other components are omitted.

[0352] As shown in FIGS. 35A and 35B, the subpixel 940_2 includes a conductor 968 and a conductor 96 9, a conductor 970, a semiconductor 971, a semiconductor 972, a conductor 973a, and a conductor 9 73b, conductor 974a, conductor 974b, conductor 975, conductor 976, and conductor Conductor 977, conductor 978, conductor 979, conductor 980, conductor 981, and conductor Conductor 982, conductor 983, conductor 984, conductor 985, conductor 986, and conductor The conductor 987 and the conductor 772 are included.

[0353] The conductors 968 to 970 can be formed in the same process. The conductors 968 to 970 are formed in the same process, and the semiconductor 972 is formed in a process after the conductors 968 to 970. Conductors 973a and 973b, and conductors 974a and The conductor 974b is formed in the same process, and is formed in a process after the conductors 968 to 970. The conductor 975 and the conductor 976 are formed in the same process. 971 and semiconductor 972, as well as conductors 973a, 973b, conductors 974a, and The conductor 974b can be formed in a subsequent step.

[0354] The conductors 977 to 981 are formed in the same process, and the conductors 975 and 976 The conductor 982 can be formed in a later step. The conductors 983 to 985 can be formed in the same process. The conductor 986 and the conductor 987 are formed in a process subsequent to the process for forming the conductor 982. The conductors 87 are formed in the same process and are formed in a process after the conductors 983 to 985. The conductor 772 can be formed in a step after the conductors 986 and 987. This can be done.

[0355] The conductor 968 functions as a back gate electrode of the transistor 513 and The semiconductor 971 corresponds to the wiring 831_2 having a function as a line. The conductor 973a has a channel formation region of 3. The conductor 973b serves as one of the drain electrodes of the transistor 513. The conductor 975 functions as the other of the source electrode and the drain electrode. It functions as the gate electrode of the gate electrode 513.

[0356] The conductor 970 functions as a back gate electrode of the transistor 521. The conductor 972 has a channel formation region of the transistor 521. The conductor 974 serves as one of the source and drain electrodes of the transistor 521. b functions as the other of the source electrode and the drain electrode of the transistor 521. The conductor 976 functions as a gate electrode of the transistor 521 .

[0357] The conductor 977 functions as one electrode of the capacitor 517. The conductor 983 serves as the other electrode of the capacitor 517. The conductor 986 corresponds to the wiring 832_2 having the function of a power supply line. The conductor 772 corresponds to the wiring 537. As described above, the conductor 772 is connected to one electrode of the light-emitting element 572. It has the function of

[0358] The conductor 968 is electrically connected to the conductor 978. The conductor 969 is electrically connected to the conductor 97 7. The conductor 970 is electrically connected to the conductor 981. The conductor 973a is electrically connected to the conductor 979. The conductor 973b is electrically connected to the conductor The conductor 974a is electrically connected to the conductor 977. The conductor 974a is electrically connected to the conductor 980. It is being done.

[0359] The conductor 974b is electrically connected to the conductor 981. That is, the transistor 52 conductor 970 serving as a back gate electrode of transistor 521 and a source electrode of transistor 522. The conductor 974b having the function of the other of the source electrode and the drain electrode is a conductor 981. are electrically connected via

[0360] The conductor 975 is electrically connected to the conductor 978. That is, the transistor 513 a conductor 968 serving as a back gate electrode of the transistor 513; The conductor 975 having a function as an electrode is electrically connected via the conductor 978. In addition, the conductor 976 is electrically connected to the conductor 977.

[0361] The conductor 979 is electrically connected to the conductor 983. That is, the transistor 513 a conductor 973a functioning as one of the source and drain of the The functional conductor 983 is electrically connected via the conductor 979 .

[0362] Conductor 980 is electrically connected to conductor 984. Conductor 981 is electrically connected to conductor 98 5. Conductor 982 is electrically connected to conductor 985. .

[0363] The conductor 984 is electrically connected to the conductor 986. That is, the transistor 521 a conductor 974a functioning as one of the source electrode and the drain electrode of the power supply line; The conductor 986, which functions as a is connected to.

[0364] The conductor 985 is electrically connected to the conductor 987. The conductor 987 is electrically connected to the conductor 77. 2 is electrically connected to

[0365] The semiconductor 971 and the semiconductor 972 can include, for example, a metal oxide. The transistor 513 and the transistor 521 can be OS transistors.

[0366] FIG. 36 is a top view showing the stacked structure of the subpixels 940_1 and 940_2. 9 shows the electrical connection relationship between the sub-pixel 940_1 and the sub-pixel 940_2. Therefore, the conductor 772 having a function as a pixel electrode and provided in the subpixel 940_2 is Not shown.

[0367] As shown in FIG. 36, a conductor 966 provided in the subpixel 940_1 and a conductor 966 provided in the subpixel 940_2 The sub-pixels 940, 941, 942, 943, 944, 945, 946, 947, 948, 949, 950, 951, 952, 953, 954, 955, 956, 957, 958, 959, 960, 961, 962, 963, 9 The other electrode of the capacitor 515 provided in the sub-pixel 940_1 is connected to the transistor provided in the sub-pixel 940_2. The other of the source and drain of the transistor 513, the gate of the transistor 521, and the capacitor element 5 17. In addition, the subpixel 940_1 is provided with A conductor 967 provided in the sub-pixel 940_1 is electrically connected to a conductor 970 provided in the sub-pixel 940_2. As a result, the source or drain of the transistor 529 provided in the subpixel 940_1 The other drain is connected to the other electrode of the capacitor 517 provided in the subpixel 940_2, The other of the source and drain of the transistor 521 and one of the electrodes of the light emitting element 572 are electrically connected to the other of the source and drain of the transistor 521 and one of the electrodes of the light emitting element 572. It can continue.

[0368] FIG. 37 shows a pixel structure including sub-pixels 940 having the configuration shown in FIG. 34(B) and FIG. 35(B). 37 is a top view showing an example of the configuration of a pixel 941. In FIG. 37, a sub-pixel 940R emits red light. The subpixel 940 has the function of emitting red light, and the subpixel 940G has the function of emitting green light. The subpixel 940B has a function of emitting blue light. As shown in FIG. 37, the subpixels 940R, 940G, and 940B are Specifically, the pixel 941 is configured by the sub-pixel 940R provided in the upper row. The sub-pixel 940B and the sub-pixel 940G provided in the lower row form one pixel 941. In addition, the sub-pixel 940G provided in the upper row and the sub-pixel 940G provided in the lower row are The sub-pixels 940R and 940B constitute one pixel 941.

[0369] In FIG. 37, the subpixels 940R, 940G, and 940B are arranged in the upper row. , and the sub-pixels 940R, 940G, and 940B provided in the lower row are respectively By using this configuration, the scanning lines are The conductor 951 and the conductor 968 have the same color subpixels in the extending direction. 940 can be arranged alternately. This allows one data line to carry light of the same color. The sub-pixels 940 having the function of emitting light can be electrically connected. and two or more types of subpixels 940R, 940G, and 940B. 40 can be prevented from being electrically connected to one data line.

[0370] FIG. 38 is a cross-sectional view of the portion indicated by the dashed line A3-A4 in FIG. 34(B) and FIG. 35(B). On the insulator 1031, a transistor, which is provided in the subpixel 940_1, is provided. A transistor 511 and a transistor 529 are provided. An insulator 1032 is provided on the transistor 529 and an insulator 1033 is provided on the insulator 1032. A substrate is provided below the insulator 1031. Between the plate and the insulator 1031, the components of the layer 820 shown in FIG. 8 (gate driver circuit 821, source driver circuit 822, circuit 840, etc.) can be provided.

[0371] As shown in FIG. 38, the conductors provided on different layers function as plugs. Electrical connection is made via conductor 990.

[0372] An insulator 1034 is provided over the conductors 958 to 962 and the insulator 1033. A conductor 963 is provided on the insulator 1034. The capacitor 515 is formed by the capacitor 34 and the conductor 963 .

[0373] An insulator 1035 is provided over the conductor 963 and the insulator 1034. An insulator 1036 is provided over the conductor 967 .

[0374] On the insulator 1036, a transistor, which is a transistor provided in the subpixel 940_2, is provided. 513 and a transistor 521 are provided. An insulator 1042 is provided on the transistor 521, and an insulator 1043 is provided on the insulator 1042. will be established.

[0375] An insulator 1044 is provided over the conductors 977 to 981 and the insulator 1043. A conductor 982 is provided on the insulator 1044. 4 and the conductor 982 form a capacitor element 517.

[0376] An insulator 1045 is provided on the conductor 982 and the insulator 1044. An insulator 1046 is provided over the conductor 985 and the insulator 1045. An insulator 1047 is provided on 86, on the conductor 987, and on the insulator 1046.

[0377] A conductor 772 and an insulator 730 are provided on the insulator 1047. As shown, the insulator 730 may be configured to partially cover the conductor 772. The conductor 772, the EL layer 786, and the conductor 788 constitute the light-emitting element 572. do.

[0378] 33, an adhesive layer 991 is provided on the conductor 788. An insulator 992 is provided on the insulating layer 991. Furthermore, a coloring layer 993 is provided on the insulating layer 992. A substrate 995 is attached onto the colored layer 993 with an adhesive layer 994 .

[0379] <Configuration example of light-emitting element> 39(A) to 39(E) are diagrams showing configuration examples of the light emitting element 572. 7 shows a structure (single structure) in which an EL layer 786 is sandwiched between a conductor 772 and a conductor 788. As mentioned above, the EL layer 786 contains a light-emitting material, for example, an organic compound light-emitting Materials included.

[0380] FIG. 39(B) is a diagram showing the laminated structure of the EL layer 786. In the light emitting element 572 having the structure, the conductor 772 functions as an anode, and the conductor 788 functions as a cathode. It functions as a pole.

[0381] The EL layer 786 is formed by stacking a hole injection layer 721, a hole transport layer 722, a light-emitting layer 723, and a conductive layer 772 on the conductive layer 772. 23, an electron transport layer 724, and an electron injection layer 725 are laminated in this order. When the conductor 772 functions as a cathode and the conductor 788 functions as an anode, The stacking order is reversed.

[0382] The light-emitting layer 723 has a light-emitting material or a combination of materials, and emits a desired light color. The light-emitting layer 723 can have a structure in which fluorescent light or phosphorescent light can be emitted. It is also possible to use a laminated structure in which different light colors are emitted. In this case, the light emitting layer to be used for each laminated light emitting layer may have a different color. The material and other materials may be different materials.

[0383] In the light-emitting element 572, for example, the conductor 772 shown in FIG. 39(B) is used as a reflective electrode. The dielectric 788 is used as a semi-transparent and semi-reflective electrode, forming a micro-optical resonator (microcavity) structure. By this, light emitted from the light emitting layer 723 included in the EL layer 786 is resonated between both electrodes. This can intensify the light emitted through the conductor 788.

[0384] The conductor 772 of the light-emitting element 572 is made of a conductive material having reflectivity and a conductive material having light-transmitting property. When the reflective electrode has a laminated structure with a conductive material (transparent conductive film), the thickness of the transparent conductive film is Specifically, the light emitted from the light-emitting layer 723 can be adjusted by controlling the light intensity. The distance between the electrodes of the conductor 772 and the conductor 788 is mλ / 2 (only) for the wavelength λ of the light. It is preferable to adjust the value so that it is close to m (where m is a natural number).

[0385] In order to amplify the desired light (wavelength: λ) obtained from the light emitting layer 723, the conductor 77 2 to the region (light emitting region) of the light emitting layer 723 where desired light is obtained, and 88 to the region (light emitting region) of the light emitting layer 723 where desired light is obtained, and It is preferable to adjust them so that they are close to (2m'+1)λ / 4 (where m' is a natural number). The light-emitting region here refers to the region where holes and electrons in the light-emitting layer 723 are released. The recombination region is shown.

[0386] By performing such optical adjustment, the spectrum of a specific monochromatic light obtained from the light-emitting layer 723 can be adjusted. This narrows the linewidth of the light and allows light emission with good color purity to be obtained.

[0387] However, in the above case, strictly speaking, the optical distance between the conductor 772 and the conductor 788 is This can be said to be the total thickness from the reflective area in the conductor 788 to the reflective area in the conductor 788. However, it is difficult to precisely determine the reflection area of ​​the conductor 772 and the conductor 788. Therefore, it is sufficient to assume that any position of the conductor 772 and the conductor 788 is a reflection area. The effect of the above can be obtained. Strictly speaking, the optical distance between the reflective area of ​​the conductor 772 and the light emitting area where the desired light is obtained is However, in the conductor 772, It is difficult to precisely determine the reflection area in the light-emitting layer and the light-emitting area in the light-emitting layer from which the desired light is obtained. Therefore, any position of the conductor 772 may be set as a reflection region, and any position of the light-emitting layer from which desired light can be obtained may be set as a reflection region. The above-mentioned effect can be sufficiently obtained by assuming any position as the light-emitting region.

[0388] The light-emitting element 572 shown in FIG. 39(B) has a microcavity structure, and therefore, Even if the layer has different wavelengths, it is possible to extract light of different wavelengths (monochromatic light). There is no need to paint different colors (e.g., RGB) to obtain different light colors. It is also possible to combine it with a colored layer. Since it is possible to increase the light emission intensity in the surface direction, it is possible to reduce power consumption.

[0389] The light emitting element 572 shown in FIG. 39(B) does not have a microcavity structure. In this case, the light-emitting layer 723 may be configured to emit white light, and a colored layer may be provided. In addition, the EL layer 786 can be formed. When doing so, if different colors are applied to obtain different luminescent colors, it is possible to obtain a desired color without providing a colored layer. It can extract light.

[0390] At least one of the conductor 772 and the conductor 788 is a light-transmitting electrode (a transparent electrode, a semi-transmitting electrode, a When the electrode having light-transmitting properties is a transparent electrode, the transparent electrode The visible light transmittance of the electrode is 40% or more. The reflectance of the semi-reflective electrode for visible light is 20% or more and 80% or less, preferably 40% or more and 70% or less. The resistivity of these electrodes is 1×10 -2 Ωcm or less is preferable.

[0391] When the conductor 772 or the conductor 788 is an electrode having reflectivity (a reflective electrode), the reflective The reflectance of the electrode having the visible light is 40% or more and 100% or less, preferably 70% or more and 10 0% or less. The resistivity of this electrode is 1×10 -2 Ωcm or less is preferable.

[0392] The light emitting element 572 may have a configuration shown in Fig. 39(C). Two EL layers (EL layer 786a and EL layer 786b) are formed between the conductor 772 and the conductor 788. a stacked structure having a charge generating layer 792 between the EL layer 786a and the EL layer 786b; The light emitting element 572 has a tandem structure. Therefore, the current efficiency and the external quantum efficiency of the light-emitting element 572 can be improved. It is possible to display a high-brightness image on the display device 810. In addition, the power consumption of the display device 810 can be reduced. Here, the EL layer 786a and the EL layer 786b are The EL layer 786 may have the same structure as the EL layer 786 .

[0393] The charge generating layer 792 generates an EL when a voltage is applied between the conductor 772 and the conductor 788. Electrons are injected into one of the layer 786a and the EL layer 786b, and holes are injected into the other. Therefore, the potential of the conductor 772 becomes higher than the potential of the conductor 788. When a voltage is applied so that the charge generation layer 792 is injecting electrons into the EL layer 786a, Holes are injected from the charge generating layer 792 into the EL layer 786b.

[0394] In addition, the charge generation layer 792 transmits visible light from the viewpoint of light extraction efficiency (specifically, It is preferable that the visible light transmittance of the charge generating layer 792 is 40% or more. The conductivity of the generating layer 792 is lower than the conductivity of the conductor 772 or the conductivity of the conductor 788. Good too.

[0395] The light emitting element 572 may have a configuration shown in Fig. 39(D). Three EL layers (EL layer 786a, EL layer 786b, and and EL layer 786c), and between EL layer 786a and EL layer 786b and between EL layer 786c. The light-emitting element 57 has a tandem structure having a charge generation layer 792 between the EL layer 786b and the EL layer 786c. 2. Here, the EL layer 786a, the EL layer 786b, and the EL layer 786c are the same as those shown in FIG. The light-emitting element 572 can have the same structure as the EL layer 786 shown in FIG. ) is used, the current efficiency and external quantum efficiency of the light-emitting element 572 can be further improved. Therefore, it is possible to display an image with higher brightness on the display device 810. In addition, the power consumption of the display device 810 can be further reduced.

[0396] The light emitting element 572 may have a configuration shown in Fig. 39(E). Between the conductor 772 and the conductor 788, n EL layers (EL layer 786(1) to EL layer 786(6)) are provided. (n)) is provided, and a tandem structure having a charge generation layer 792 between each EL layer 786 is provided. 7 shows a light-emitting device 572 having the following structure. Here, EL layer 786(1) to EL layer 786(n) are The EL layer 786 shown in FIG. 39(B) can have the same structure as that of the EL layer 786 shown in FIG. Among the EL layers 786, the EL layer 786(1), the EL layer 786(m), and the EL layer 786( m+1) and EL layer 786(n), where m is an integer equal to or greater than 2 and less than n. The larger the value of n, the higher the current efficiency and external power consumption of the light emitting element 572. Therefore, the display device 810 can display an image with high brightness. In addition, the power consumption of the display device 810 can be reduced.

[0397] <Materials for light-emitting elements> Next, constituent materials that can be used for the light emitting element 572 will be described.

[0398] <<Conductor 772 and Conductor 788>> If the conductor 772 and the conductor 788 can fulfill the functions of an anode and a cathode, the following can be applied to them: The materials shown in the table can be used in appropriate combination. For example, metals, alloys, and electrically conductive compounds can be used. In-Sn oxide ( ITO), In-Si-Sn oxide (ITSO), In-Zn oxide, In-W-Zn oxide is one of the examples. Other examples include aluminum (Al), titanium (Ti), Chromium (Cr), Manganese (Mn), Iron (Fe), Cobalt (Co), Nickel (Ni) , Copper (Cu), Gallium (Ga), Zinc (Zn), Indium (In), Tin (Sn), Molybdenum (Mo), Tantalum (Ta), Tungsten (W), Palladium (Pd), Gold (Au), platinum (Pt), silver (Ag), yttrium (Y), neodymium (Nd), and other metals In addition, alloys containing these in appropriate combinations can also be used. Elements belonging to Group 1 or 2 of the periodic table (e.g., lithium (Li), cesium ( Cs), calcium (Ca), strontium (Sr), europium (Eu), Rare earth metals such as terbium (Yb) and alloys containing these in appropriate combinations, other graphite Phen etc. can be used.

[0399] <<Hole Injection Layer 721 and Hole Transport Layer 722>> The hole injection layer 721 is connected to the EL layer 786 from the conductor 772 or the charge generation layer 792 which is the anode. This is a layer that injects holes and contains a material with high hole injection properties. EL layer 786a, EL layer 786b, EL layer 786c, and EL layers 786(1) to 786(E) It shall include layer L 786(n).

[0400] Materials with high hole injection properties include molybdenum oxide, vanadium oxide, and ruthenium oxide. Examples of oxides of transition metals include oxides of tungsten, manganese, and the like. Phthalocyanine (abbreviated as HPc) and copper phthalocyanine (abbreviated as CuPc) The 4,4'-bis[N-(4-diphenylaminophenyl)-N-phenyl N,N'-bis[4-[bis(3-methylphenyl)amino]biphenyl (abbreviation: DPAB), (phenyl)amino]phenyl}-N,N'-diphenyl-(1,1'-biphenyl)-4, Aromatic amine compounds such as 4'-diamine (abbreviation: DNTPD) or poly(3,4-ethyl PEDOT / PSS) / Poly(styrenesulfonic acid) Polymers such as the above can be used.

[0401] In addition, materials with high hole injection properties include hole transport materials and acceptor materials (electron acceptor materials). In this case, a composite material containing an acceptor material can be used. Electrons are extracted from the hole transport material, generating holes in the hole injection layer 721, and the holes are transported to the hole transport layer 72. Holes are injected into the light-emitting layer 723 through the hole-injecting layer 721. It may be formed of a single layer made of a composite material containing a material having an electron-accepting property and an acceptor material (electron-accepting material). However, the hole transport material and the acceptor material (electron acceptor material) are stacked in separate layers. It may be formed in layers.

[0402] The hole transport layer 722 emits holes injected from the conductor 772 by the hole injection layer 721. The hole transport layer 722 is a layer that transports electrons to the light-transporting layer 723. The hole transport layer 722 is a layer that contains a hole transporting material. The hole transporting material used for the hole transport layer 722 is particularly suitable for the HOMO level of the hole injection layer 721. It is preferable to use a compound having a HOMO level that is the same as or close to the HOMO level.

[0403] Acceptor materials used in the hole injection layer 721 include those of Group 4 to 5 in the periodic table. Oxides of metals belonging to Group 8 can be used. Specifically, molybdenum oxide, Vanadium, niobium oxide, tantalum oxide, chromium oxide, tungsten oxide, manganese oxide Among them, molybdenum oxide is particularly stable in the atmosphere and is easily absorbed. It is preferred because it has low moisture resistance and is easy to handle. Other examples include quinodimethane derivatives and chloranil derivatives. Organic acceptors such as hexaazatriphenylene derivatives can be used. 7,7,8,8-tetracyano-2,3,5,6-tetrafluoroquinodimethane ( Abbreviation: F4-TCNQ), chloranil, 2,3,6,7,10,11-hexacyano-1 , 4,5,8,9,12-hexaazatriphenylene (abbreviation: HAT-CN) It is possible.

[0404] The hole transporting material used for the hole injection layer 721 and the hole transport layer 722 is 10 -6 cm 2 A material having a hole mobility of 1 / Vs or more is preferred. Any other suitable substance may be used.

[0405] As hole transport materials, π-electron-rich heteroaromatic compounds (e.g., carbazole derivatives, Indole derivatives) and aromatic amine compounds are preferred, and specific examples include 4,4'-bis [N-(1-naphthyl)-N-phenylamino]biphenyl (abbreviated as NPB or α-NP D), N,N'-bis(3-methylphenyl)-N,N'-diphenyl-[1,1'-biphenyl] phenyl]-4,4'-diamine (abbreviation: TPD), 4,4'-bis[N-(spiro-9 ,9'-bifluoren-2-yl)-N-phenylamino]biphenyl (abbreviation: BSPB ), 4-phenyl-4'-(9-phenylfluoren-9-yl)triphenylamine ( Abbreviation: BPAFLP), 4-phenyl-3'-(9-phenylfluoren-9-yl)trimethylsilyl mBPAFLP, 4-phenyl-4'-(9-phenyl-9 H-carbazol-3-yl)triphenylamine (abbreviation: PCBA1BP), 3-[4 -(9-phenanthryl)-phenyl]-9-phenyl-9H-carbazole (abbreviation: P CPPn), N-(4-biphenyl)-N-(9,9-dimethyl-9H-fluorene-2 -yl)-9-phenyl-9H-carbazol-3-amine (abbreviation: PCBiF), N- (1,1'-biphenyl-4-yl)-N-[4-(9-phenyl-9H-carbazole] -3-yl)phenyl]-9,9-dimethyl-9H-fluoren-2-amine (abbreviation: P CBBiF), 4,4'-diphenyl-4''-(9-phenyl-9H-carbazole- 3-yl)triphenylamine (abbreviated as PCBBi1BP), 4-(1-naphthyl)-4 '-(9-phenyl-9H-carbazol-3-yl)triphenylamine (abbreviation: PC BANB), 4,4'-di(1-naphthyl)-4''-(9-phenyl-9H-carbazo (3-yl)triphenylamine (abbreviation: PCBNBB), 9,9-dimethyl-N- Phenyl-N-[4-(9-phenyl-9H-carbazol-3-yl)phenyl]fluor Poly(4-phenyl-2-phenyl-2-methyl-2-phenyl ... 9H-carbazol-3-yl)phenyl]spiro-9,9'-bifluorene-2-amine PCBASF (abbreviation: PCBASF), 4,4',4''-tris(carbazol-9-yl)trimethylsilyl phenylamine (abbreviation: TCTA), 4,4',4''-tris(N,N-diphenylamine) 4,4',4''-tris[N-(3 -methylphenyl)-N-phenylamino]triphenylamine (abbreviation: MTDATA) Compounds with aromatic amine skeletons such as 1,3-bis(N-carbazolyl)benzene (abbreviation mCP), 4,4'-di(N-carbazolyl)biphenyl (CBP), 3,6 -Bis(3,5-diphenylphenyl)-9-phenylcarbazole (abbreviation: CzTP) , 3,3'-bis(9-phenyl-9H-carbazole) (abbreviation: PCCP), 3-[N -(9-phenylcarbazol-3-yl)-N-phenylamino]-9-phenylcarbazol carbazole (abbreviation: PCzPCA1), 3,6-bis[N-(9-phenylcarbazole- 3-yl)-N-phenylamino]-9-phenylcarbazole (abbreviation: PCzPCA2 ), 3-[N-(1-naphthyl)-N-(9-phenylcarbazol-3-yl)amino ]-9-phenylcarbazole (abbreviation: PCzPCN1), 1,3,5-tris[4-( N-carbazolyl)phenyl]benzene (abbreviation: TCPB), 9-[4-(10-phenyl [C1-9-anthracenylphenyl]-9H-carbazole (abbreviation: CzPA) Compounds with a benzol skeleton, 4,4',4''-(benzene-1,3,5-triyl) Tri(dibenzothiophene) (abbreviation: DBT3P-II), 2,8-diphenyl-4-[ 4-(9-phenyl-9H-fluoren-9-yl)phenyl]dibenzothiophene (abbreviation Name: DBTFLP-III), 4-[4-(9-phenyl-9H-fluoren-9-yl )phenyl]-6-phenyldibenzothiophene (abbreviation: DBTFLP-IV) Compounds with a phene skeleton, 4,4',4''-(benzene-1,3,5-triyl)triphenylphosphine Dibenzofuran (abbreviation: DBF3P-II), 4-{3-[3-(9-phenyl- 9H-fluoren-9-yl)phenyl]phenyl}dibenzofuran (abbreviation: mmDBF Examples include compounds having a furan skeleton such as FLBi-II).

[0406] Furthermore, poly(N-vinylcarbazole) (abbreviation: PVK), poly(4-vinyltriphenyl ether) Nylamine) (abbreviation: PVTPA), poly[N-(4-{N'-[4-(4-diphenyl amino)phenyl]phenyl-N'-phenylamino}phenyl)methacrylamide]( abbreviation: PTPDMA), poly[N,N'-bis(4-butylphenyl)-N,N'-bis Polymer compounds such as [(phenyl)benzidine] (abbreviation: Poly-TPD) can also be used. can.

[0407] However, the hole transport material is not limited to the above, and may be one or a combination of various known materials. The hole-transporting material may be used in combination in the hole injection layer 721 and the hole transport layer 722. The hole transport layer 722 may be formed of a plurality of layers. For example, a first hole transport layer and a second hole transport layer may be laminated.

[0408] <<Light-emitting layer 723>> The light-emitting layer 723 is a layer containing a light-emitting substance. A substance that emits light of a color such as red, green, yellow-green, yellow, orange, or red is appropriately used. 39(C), (D), and (E), when the light-emitting element 572 has multiple EL layers. By using different light-emitting materials for the light-emitting layers 723 provided in the respective EL layers, (for example, white light obtained by combining complementary colors) For example, when the light-emitting element 572 has the structure shown in FIG. In this case, the luminescent material used in the luminescent layer 723 provided in the EL layer 786a and the luminescent material used in the EL layer 786b By making the luminescent material used for the EL layer 721 different from that used for the luminescent layer 723 provided in the EL layer 722, The color of the light emitted by the EL layer 86a can be made different from the color of the light emitted by the EL layer 786b. It is also possible for one light-emitting layer to have a laminated structure containing different light-emitting materials.

[0409] The light-emitting layer 723 contains one or more organic compounds in addition to the light-emitting substance (guest material). The organic compound may contain one or more organic compounds (host material, assist material). As the layer, one or both of a hole transporting material and an electron transporting material can be used.

[0410] When the light-emitting element 572 has the configuration shown in FIG. 39(C), the EL layer 786a and the EL A light-emitting material that emits blue light (blue light-emitting material) is used as a guest material in one of the layers 786b. On the other hand, a substance that emits green light (green luminescent substance) and a substance that emits red light (red luminescent substance) are used. This method is preferably used to emit light from a blue luminescent material (blue luminescent layer). This is effective when the efficiency and life span are inferior to other materials. Green and red luminescent materials are used, which convert the excitation energy into luminescence in the visible light region. For example, if a light-emitting material that converts triplet excitation energy into visible light is used, RGB This is preferable because it improves the spectral balance.

[0411] The light-emitting material that can be used for the light-emitting layer 723 is not particularly limited. A luminescent material that converts triplet excitation energy into visible light. A luminescent material that converts light into light can be used. Some examples include the following:

[0412] Luminescent materials that convert singlet excitation energy into light include fluorescent materials. Examples thereof include pyrene derivatives, anthracene derivatives, triphenylene derivatives, fluorene derivatives, and the like. Olene derivatives, carbazole derivatives, dibenzothiophene derivatives, dibenzofuran derivatives , dibenzoquinoxaline derivatives, quinoxaline derivatives, pyridine derivatives, pyrimidine derivatives Pyrene derivatives, in particular, are luminescent. It is preferable because it has a high quantum yield. Specific examples of pyrene derivatives include N,N'-bis(3-methylpyrene) and N,N'-bis[3-(9-phenyl-9H-fluoren-9-yl)phenyl] Phenyl]pyrene-1,6-diamine (abbreviation: 1,6mMemFLPAPrn), N,N '-Diphenyl-N,N'-bis[4-(9-phenyl-9H-fluoren-9-yl) Phenyl]pyrene-1,6-diamine (abbreviation: 1,6FLPAPrn), N,N'-bis (Dibenzofuran-2-yl)-N,N'-diphenylpyrene-1,6-diamine (abbreviation :1,6FrAPrn), N,N'-bis(dibenzothiophen-2-yl)-N,N' -diphenylpyrene-1,6-diamine (abbreviation: 1,6ThAPrn), N,N'-(pyrene) Benzene-1,6-diyl)bis[(N-phenylbenzo[b]naphtho[1,2-d]furan )-6-amine] (abbreviation: 1,6BnfAPrn), N,N'-(pyrene-1,6-diamine) bis[(N-phenylbenzo[b]naphtho[1,2-d]furan)-8-amine]( Abbreviation: 1,6BnfAPrn-02), N,N'-(pyren-1,6-diyl)bis[( 6,N-diphenylbenzo[b]naphtho[1,2-d]furan)-8-amine](abbreviation: 1,6BnfAPrn-03) and the like. In addition, the pyrene derivative is This is a group of compounds useful for achieving blue chromaticity in

[0413] In addition, 5,6-bis[4-(10-phenyl-9-anthryl)phenyl]-2, 2'-Bipyridine (abbreviation: PAP2BPy), 5,6-bis[4'-(10-phenyl- 9-anthryl)biphenyl-4-yl]-2,2'-bipyridine (abbreviation: PAPP2B Py), N,N'-bis[4-(9H-carbazol-9-yl)phenyl]-N,N' -Diphenylstilbene-4,4'-diamine (abbreviation: YGA2S), 4-(9H-calcium (bazol-9-yl)-4'-(10-phenyl-9-anthryl)triphenylamine (Abbreviation: YGAPA), 4-(9H-carbazol-9-yl)-4'-(9,10-di N,9-diphenyl-2-anthryl)triphenylamine (abbreviation: 2YGAPPA) Phenyl-N-[4-(10-phenyl-9-anthryl)phenyl]-9H-carbazo PCAPA, 4-(10-phenyl-9-anthryl)-4 '-(9-phenyl-9H-carbazol-3-yl)triphenylamine (abbreviation: PC BAPA), 4-[4-(10-phenyl-9-anthryl)phenyl]-4'-(9- Phenyl-9H-carbazol-3-yl)triphenylamine (abbreviation: PCBAPBA ), perylene, 2,5,8,11-tetra(tert-butyl)perylene (abbreviation: TBP ), N,N''-(2-tert-butylanthracene-9,10-diyldi-4,1- phenylene)bis[N,N',N'-triphenyl-1,4-phenylenediamine](abbreviation Name: DPABPA), N,9-diphenyl-N-[4-(9,10-diphenyl-2-a N-(2-phenyl-9H-carbazol-3-amine (abbreviation: 2PCAPPA), -[4-(9,10-diphenyl-2-anthryl)phenyl]-N,N',N'-tri Phenyl-1,4-phenylenediamine (abbreviation: 2DPAPPA) and the like can be used. do.

[0414] Furthermore, examples of luminescent materials that convert triplet excitation energy into luminescence include phosphorescent materials. materials (phosphorescent materials) and thermally activated delayed fluorescence (TAF) tivated delayed fluorescence (TADF) materials are can be.

[0415] Phosphorescent materials include organometallic complexes, metal complexes (platinum complexes), and rare earth metal complexes. These emit different colors (emission peaks) depending on the substance, so they should be selected appropriately as needed. Select and use.

[0416] It has a blue or green color and the peak wavelength of the emission spectrum is 450 nm or more and 570 nm or less. Examples of phosphorescent materials include the following:

[0417] For example, tris{2-[5-(2-methylphenyl)-4-(2,6-dimethylphenyl )-4H-1,2,4-triazol-3-yl-κN 2 ]phenyl-κC}iridium (III) (abbreviation: [Ir(mpptz-dmp)3]), tris(5-methyl-3,4 -diphenyl-4H-1,2,4-triazolato)iridium(III) (abbreviation: [Ir (Mptz)3]), tris[4-(3-biphenyl)-5-isopropyl-3-phenyl [Ir(iPrp)] tz-3b)3]), tris[3-(5-biphenyl)-5-isopropyl-4-phenyl [Ir(iPr5 btz)3]), organometallic complexes with a 4H-triazole skeleton, such as tris[3- Methyl-1-(2-methylphenyl)-5-phenyl-1H-1,2,4-triazolato ]iridium(III) (abbreviation: [Ir(Mptz1-mp)3]), tris(1-methyl Iridium(II) I) (abbreviation: [Ir(Prtz1-Me)3]) Organometallic complexes containing fac-tris[1-(2,6-diisopropylphenyl)-2-phenyl]propanol [phenyl-1H-imidazole]iridium(III) (abbreviation: [Ir(iPrpmi)3 ]), tris[3-(2,6-dimethylphenyl)-7-methylimidazo[1,2-f] [Ir(dmpimpt-Me)3 organometallic complexes with imidazole skeletons, such as bis[2-(4',6'-difluoromethyl] (O-phenyl)pyridinato-N,C 2’ ]iridium(III) tetrakis(1-pyrazoline) aryl)borate (abbreviation: FIr6), bis[2-(4',6'-difluorophenyl)pi Lysinato-N,C 2’ ] Iridium(III) picolinate (abbreviation: FIrpic), bis[2-(3,5-bistrifluoromethylphenyl)pyridinato-N,C 2’ ]Iriji Ir(III) picolinate (abbreviation: [Ir(CF3ppy)2(pic)]), bis[ 2-(4',6'-difluorophenyl)pyridinato-N,C 2’ ] Iridium (III ) acetylacetonate (abbreviation: FIr(acac)) Examples of suitable organic compounds include organometallic complexes having a diphenylpyridine derivative as a ligand.

[0418] It is green or yellow and the peak wavelength of the emission spectrum is 495 nm or more and 590 nm or less. Examples of phosphorescent materials include the following:

[0419] For example, tris(4-methyl-6-phenylpyrimidinato)iridium(III) (abbreviation :[Ir(mppm)3]), tris(4-t-butyl-6-phenylpyrimidinato)i Lithium(III) (abbreviation: [Ir(tBuppm)3]), (acetylacetonato)bis(trimethylsilyl) Bis(6-methyl-4-phenylpyrimidinato)iridium(III) (abbreviation: [Ir(m ppm)2(acac)]), (acetylacetonato)bis(6-tert-butyl-4 -phenylpyrimidinato)iridium(III) (abbreviation: [Ir(tBuppm)2(a cac)]), (acetylacetonato)bis[6-(2-norbornyl)-4-phenyl [Pyrimidinato]iridium(III) (abbreviation: [Ir(nbppm)2(acac)]) , (acetylacetonato)bis[5-methyl-6-(2-methylphenyl)-4-phenyl [Ir(mpmppm)2(acac) ]), (acetylacetonato)bis{4,6-dimethyl-2-[6-(2,6-dimethyl (phenyl)-4-pyrimidinyl-κN 3 ]phenyl-κC}iridium(III) (abbreviation :[Ir(dmppm-dmp)2(acac)]), (acetylacetonato)bis(4 ,6-diphenylpyrimidinato)iridium(III) (abbreviation: [Ir(dppm)2( organometallic iridium complexes with pyrimidine skeletons, such as (acetyl acac)] cetonato)bis(3,5-dimethyl-2-phenylpyrazinato)iridium(III)( Abbreviation: [Ir(mppr-Me)2(acac)]), (acetylacetonato)bis(5 -isopropyl-3-methyl-2-phenylpyrazinato)iridium(III) (abbreviation: Organometallic pyrazine skeletons such as [Ir(mppr-iPr)2(acac)] Iridium complex, tris(2-phenylpyridinato-N,C 2’ ) Iridium(III) (abbreviation: [Ir(ppy)3]), bis(2-phenylpyridinato-N,C 2’ ) Iriji Ir(III) acetylacetonate (abbreviation: [Ir(ppy)2(acac)]), (benzo[h]quinolinato)iridium(III) acetylacetonate (abbreviation: [I r(bzq)2(acac)]), tris(benzo[h]quinolinato)iridium(II I) (abbreviation: [Ir(bzq)3]), tris(2-phenylquinolinato-N,C 2’ ) Iridium(III) (abbreviation: [Ir(pq)3]), bis(2-phenylquinolinato- N,C 2’ ) Iridium(III) acetylacetonate (abbreviation: [Ir(pq)2(a organometallic iridium complexes with pyridine skeletons, such as bis(2,4-di(cac)]) Phenyl-1,3-oxazolato-N,C 2’ ) Iridium(III) acetylacetonate Ir(dpo)2(acac)]), bis{2-[4'-(perfluorooctanoic acid Phenyl)phenyl]pyridinato-N,C 2’}Iridium(III) acetylacetonate Ir(p-PF-ph)2(acac)]), bis(2-phenylbenzo[Ir(p-PF-ph)2(acac)] Thiazolato-N,C 2’ ) Iridium(III) acetylacetonate (abbreviation: [Ir( In addition to organometallic complexes such as tris(acetylacetonato)(mono Phenanthroline) terbium(III) (abbreviation: [Tb(acac)3(Phen)] ) rare earth metal complexes.

[0420] Among the above, those having a pyridine skeleton (particularly a phenylpyridine skeleton) or a pyrimidine skeleton Organometallic iridium complexes are useful compounds for achieving green chromaticity in one embodiment of the present invention. It is a compound group.

[0421] Yellow or red, with a peak wavelength of 570 nm or more and 750 nm or less in the emission spectrum. Examples of phosphorescent materials include the following:

[0422] For example, (diisobutyrylmethanato)bis[4,6-bis(3-methylphenyl)pyrimidinyl] dinato]iridium(III) (abbreviation: [Ir(5mdppm)2(dibm)]), bis[4,6-bis(3-methylphenyl)pyrimidinato](dipivaloylmethanato)yl Ir(III) (abbreviation: [Ir(5mdppm)2(dpm)]), (dipivaloylmethyl Thanato)bis[4,6-di(naphthalen-1-yl)pyrimidinato]iridium(III ) (abbreviation: [Ir(d1npm)2(dpm)]) Metal complex, (acetylacetonato)bis(2,3,5-triphenylpyrazinato)iridide Ir(tppr)2(acac)], bis(2,3,5-trimethylsilyl) (triphenylpyrazinate)(dipivaloylmethanato)iridium(III) (abbreviation: [Ir (tppr)2(dpm)]), bis{4,6-dimethyl-2-[3-(3,5-dimethyl {(2,6-dimethylphenyl)-5-phenyl-2-pyrazinyl-κN]phenyl-κC} ... thyl-3,5-heptanedionate-κ 2 O,O')iridium(III) (abbreviation: [Ir (dmdppr-P)2(dibm)]), bis{4,6-dimethyl-2-[5-(4- Cyano-2,6-dimethylphenyl)-3-(3,5-dimethylphenyl)-2-pyrazine {(2,2,6,6-tetramethyl-3,5-heptanedioic acid)-N-phenyl-κC}(2,2,6,6-tetramethyl-3,5-heptanedioic acid) Nat-κ 2 O,O')iridium(III) (abbreviation: [Ir(dmdppr-dmCP) 2(dpm)]), (acetylacetonato)bis[2-methyl-3-phenylquinoxalate Nat-N,C 2’ ]Iridium(III) (abbreviation: [Ir(mpq)2(acac)]) , (acetylacetonato)bis(2,3-diphenylquinoxalinato-N,C 2’ ) Iri Ir(dpq)2(acac) (acetylacetonate) ) Bis[2,3-bis(4-fluorophenyl)quinoxalinato]iridium(III) Organometallic compounds with a pyrazine skeleton, such as [Ir(Fdpq)2(acac)] complexes and tris(1-phenylisoquinolinato-N,C 2’ ) Iridium (III) (abbreviation Name: [Ir(piq)3]), bis(1-phenylisoquinolinato-N,C 2’ ) Iriji Ir(piq)2(acac) Organometallic complexes with pyridine skeletons, such as 2,3,7,8,12,13,17,18- octaethyl-21H,23H-porphyrin platinum(II) (abbreviation: [PtOEP]) Platinum complexes such as tris(1,3-diphenyl-1,3-propanedionato)(monofenadine) (Eu(DBM)3(Phen)]), Tris[1-(2-thenoyl)-3,3,3-trifluoroacetonato](monophenanthate) Europium(III) (abbreviated as [Eu(TTA)3(Phen)]) Rare earth metal complexes are included.

[0423] Among the above, the organometallic iridium complex having a pyrazine skeleton is an embodiment of the present invention. This is a group of compounds that are useful for achieving red chromaticity. Organometallic iridium complexes with cyano groups, such as CP)2(dpm), are highly stable. Very desirable.

[0424] In addition, blue luminescent materials are those with a photoluminescence peak wavelength of 430 nm or more. It is preferable to use a substance with a wavelength of 70 nm or less, more preferably 430 nm or more and 460 nm or less. In addition, green luminescent materials are those with a photoluminescence peak wavelength of 500 nm or more. 0 nm or less, more preferably 500 nm to 530 nm. The luminescent material has a photoluminescence peak wavelength of 610 nm or more and 680 nm or more. A substance having a wavelength of 620 nm or more and 680 nm or less may be used. Luminescence measurements can be performed on either a solution or a thin film.

[0425] By using such compounds in combination with the microcavity effect, the above-mentioned colors can be more easily obtained. At this time, the semi-transparent film required to obtain the microcavity effect can be obtained. The thickness of the semi-reflective electrode (metal thin film portion) is preferably 20 nm or more and 40 nm or less. The thickness is greater than 25 nm and less than 40 nm. However, if the thickness exceeds 40 nm, the efficiency will decrease. There is a possibility that this may happen.

[0426] The organic compounds (host material, assist material) used in the light-emitting layer 723 include light-emitting materials ( A material with an energy gap larger than that of a non-metallic material is called a Alternatively, a plurality of types may be selected and used. The conductive materials can also be used as a host material or an assist material, respectively.

[0427] When the light-emitting substance is a fluorescent material, the host material should have an energy level of 0.05 to 0.15 in the singlet excited state. It is preferable to use an organic compound having a large energy level and a small energy level in the triplet excited state. For example, it is preferable to use an anthracene derivative or a tetracene derivative. -phenyl-3-[4-(10-phenyl-9-anthryl)phenyl]-9H-carba PCzPA (abbreviation: PCzPA), 3-[4-(1-naphthyl)-phenyl]-9-phenyl -9H-carbazole (abbreviation: PCPN), 9-[4-(10-phenyl-9-anthraquinone] 7-[4-(10-phenyl)phenyl]-9H-carbazole (abbreviation: CzPA), [c,g]carbazole (abbreviation: c gDBCzPA), 6-[3-(9,10-diphenyl-2-anthryl)phenyl]- Benzo[b]naphtho[1,2-d]furan (abbreviation: 2mBnfPPA), 9-phenyl- 10-{4-(9-phenyl-9H-fluoren-9-yl)biphenyl-4'-yl} Anthracene (abbreviation: FLPPA), 5,12-diphenyltetracene, 5,12-bis (biphenyl-2-yl)tetracene and the like.

[0428] When the light-emitting material is a phosphorescent material, the host material is a material that has triplet excitation energy of the light-emitting material. (energy difference between the ground state and the triplet excited state) In this case, in addition to zinc and aluminum-based metal complexes, Oxadiazole derivatives, triazole derivatives, benzimidazole derivatives, quinoxaline dibenzoquinoxaline derivatives, dibenzothiophene derivatives, dibenzofuran derivatives Conductors, pyrimidine derivatives, triazine derivatives, pyridine derivatives, bipyridine derivatives, phenanthroline derivatives, In addition to anthroline derivatives, aromatic amines and carbazole derivatives can also be used. .

[0429] Specifically, tris(8-quinolinolato)aluminum(III) (abbreviation: Alq), Tris(4-methyl-8-quinolinolato)aluminum(III) (abbreviation: Almq3), Bis(10-hydroxybenzo[h]quinolinato)beryllium(II) (BeBq 2) Bis(2-methyl-8-quinolinolato)(4-phenylphenolato)aluminum (III) (abbreviation: BAlq), bis(8-quinolinolato)zinc(II) (abbreviation: Znq ), bis[2-(2-benzoxazolyl)phenolato]zinc(II) (abbreviation: ZnPB O), bis[2-(2-benzothiazolyl)phenolato]zinc(II) (abbreviation: ZnBT Z), 2-(4-biphenylyl)-5-(4-tert-butylphenyl) -1,3,4-oxadiazole (abbreviation: PBD), 1,3-bis[5-(p-tert -butylphenyl)-1,3,4-oxadiazol-2-yl]benzene (abbreviation: OX D-7), 3-(4-biphenylyl)-4-phenyl-5-(4-tert-butylphenyl) 2,2',2''-(1,3,5-triazole) -benzenetriyl)-tris(1-phenyl-1H-benzimidazole) (abbreviation: T PBI), bathophenanthroline (abbreviated as BPhen), bathocuproine (abbreviated as BC P), 2,9-bis(naphthalen-2-yl)-4,7-diphenyl-1,10-phenanthroline ntrolin (abbreviation: NBphen), 9-[4-(5-phenyl-1,3,4-oxazolidinyl) Heterocyclization of (azol-2-yl)phenyl]-9H-carbazole (abbreviation: CO11) and other compounds Examples of aromatic amine compounds include aromatic amine compounds such as NPB, TPD, and BSPB.

[0430] In addition, anthracene derivatives, phenanthrene derivatives, pyrene derivatives, chrysene derivatives, di Condensed polycyclic aromatic compounds such as benzo[g,p]chrysene derivatives are included. ,10-Diphenylanthracene (abbreviation: DPAnth), N,N-diphenyl-9-[ 4-(10-phenyl-9-anthryl)phenyl]-9H-carbazol-3-amine (Abbreviation: CzA1PA), 4-(10-phenyl-9-anthryl)triphenylamine (abbreviation: DPhPA), YGAPA, PCAPA, N,9-diphenyl-N-{4-[4 -(10-phenyl-9-anthryl)phenyl]phenyl}-9H-carbazole-3 -amine (abbreviation: PCAPBA), 9,10-diphenyl-2-[N-phenyl-N-( 9-phenyl-9H-carbazol-3-yl)amino]anthracene (abbreviation: 2PCA PA), 6,12-dimethoxy-5,11-diphenylchrysene, N,N,N',N', N'',N'',N''',N'''-Octaphenyldibenzo[g,p]chrysene-2 ,7,10,15-tetraamine (abbreviation: DBC1), 9-[4-(10-phenyl-9 -anthracenyl)phenyl]-9H-carbazole (abbreviation: CzPA), 3,6-diphenyl Phenyl-9-[4-(10-phenyl-9-anthryl)phenyl]-9H-carbazo (abbreviation: DPCzPA), 9,10-bis(3,5-diphenylphenyl)anthracene DPPA), 9,10-di(2-naphthyl)anthracene (DNA), 2-tert-butyl-9,10-di(2-naphthyl)anthracene (abbreviation: t-BuD NA), 9,9'-bianthryl (abbreviation: BANT), 9,9'-(stilbene-3,3 '-diyl)diphenanthrene (abbreviation: DPNS), 9,9'-(stilbene-4,4' -diyl)diphenanthrene (abbreviation: DPNS2), 1,3,5-tri(1-pyrenyl) Benzene (abbreviation: TPB3) and the like can be used.

[0431] In addition, when a plurality of organic compounds are used in the light-emitting layer 723, a compound that forms an exciplex is used to emit light. In this case, various organic compounds are used in combination. However, in order to efficiently form an exciplex, it is necessary to use a compound that readily accepts holes. A compound (hole transport material) that easily accepts electrons (electron transport material) is combined. It is particularly preferable to use a combination of the hole transporting material and the electron transporting material. The materials described in this embodiment mode can be used.

[0432] TADF materials are materials that convert triplet excited states into singlet excited states using a small amount of thermal energy. It is possible to convert the electrons into electrons (reverse intersystem crossing) and efficiently emit light (fluorescence) from the singlet excited state. In addition, the conditions for efficiently obtaining thermally activated delayed fluorescence are three The energy difference between the doublet excitation level and the singlet excitation level is 0 eV or more and 0.2 eV or less, preferably The delayed fluorescence in TADF materials is between 0 eV and 0.1 eV. The light is an emission that has a spectrum similar to that of normal fluorescence, but has a significantly longer lifespan. The lifespan of -6 seconds or more, preferably 10 -3 More than a second.

[0433] TADF materials include, for example, fullerenes and their derivatives, and acridines such as proflavine. Derivatives, eosin, etc. Also, magnesium (Mg), zinc (Zn), cadmium Cd, Sn, Pt, In, or Palladium Examples of metal-containing porphyrins include metal-containing porphyrins containing Pd, etc. For example, protoporphyrin-tin fluoride complex (SnF2(Proto IX)), mesoporphyrin Porphyrin-tin fluoride complex (SnF2(Meso IX)), hematoporphyrin Tin fluoride complex (SnF2(Hemato IX)), coproporphyrin tetramethyl Ester-tin fluoride complex (SnF2(Copro III-4Me)), octaethyl Porphyrin-tin fluoride complex (SnF2(OEP)), etioporphyrin-tin fluoride SnF2(Etio I) complex, octaethylporphyrin-platinum chloride complex (Pt Cl2OEP) etc.

[0434] In addition, 2-(biphenyl-4-yl)-4,6-bis(12-phenylindolo[ 2,3-a]carbazol-11-yl)-1,3,5-triazine (PIC-TRZ) , 2-{4-[3-(N-phenyl-9H-carbazol-3-yl)-9H-carbazo {4,6-diphenyl-1,3,5-triazine (PCCz PTzn), 2-[4-(10H-phenoxazin-10-yl)phenyl]-4,6- Diphenyl-1,3,5-triazine (PXZ-TRZ), 3-[4-(5-phenyl- 5,10-dihydrophenazin-10-yl)phenyl]-4,5-diphenyl-1,2 ,4-triazole (PPZ-3TPT), 3-(9,9-dimethyl-9H-acridine -10-yl)-9H-xanthen-9-one (ACRXTN), bis[4-(9,9- Dimethyl-9,10-dihydroacridine)phenyl]sulfone (DMAC-DPS), 10-phenyl-10H,10'H-spiro[acridine-9,9'-anthracene]- π-electron rich heteroaromatic rings and π-electron deficient heteroaromatic rings such as 10'-one (ACRSA) It is to be noted that the π-electron rich heteroaromatic ring and the π-electron deficient heteroaromatic ring can be used. The substance in which the π-electron-rich heteroaromatic ring is directly bonded to the π-electron-deficient heteroaromatic ring exhibits the donor property of the π-electron-rich heteroaromatic ring. The acceptor properties of the toe-shaped heteroaromatic rings are both strong, and the energies of the singlet and triplet excited states are This is particularly preferable because the energy difference is small.

[0435] When using a TADF material, it can also be used in combination with other organic compounds.

[0436] <<Electron transport layer 724>> The electron transport layer 724 emits electrons injected from the conductor 788 by the electron injection layer 725. The electron transport layer 724 is a layer that transports electrons to the light layer 723. The electron transport layer 724 is a layer that contains an electron transport material. The electron transporting material used in the electron transport layer 724 is 1×10 -6 cm 2 / Vs or more A substance having a higher electron transporting property than a hole transporting property is preferably used. Others than these may be used.

[0437] Electron transporting materials include quinoline ligands, benzoquinoline ligands, and oxazole ligands. or metal complexes having thiazole ligands, oxadiazole derivatives, triazoles derivatives, phenanthroline derivatives, pyridine derivatives, bipyridine derivatives, etc. In addition, π-electron deficient heteroaromatic compounds such as nitrogen-containing heteroaromatic compounds can also be used. can.

[0438] Specifically, Alq3, tris(4-methyl-8-quinolinolato)aluminum(III ) (abbreviation: Almq3), bis(10-hydroxybenzo[h]quinolinato)beryllium (Abbreviation: BeBq2), BAlq, Zn(BOX)2, bis[2-(2-hydroxyphenyl) metal complexes such as 2-(benzothiazol-1-yl)benzothiazolato)zinc(II) (abbreviation: Zn(BTZ)2), (4-biphenylyl)-5-(4-tert-butylphenyl)-1,3,4-oxazolidinyl Azole (abbreviation: PBD), 1,3-bis[5-(p-tert-butylphenyl)-1 ,3,4-Oxadiazol-2-yl]benzene (abbreviation: OXD-7), 3-(4'- tert-butylphenyl)-4-phenyl-5-(4''-biphenyl)-1,2,4 -triazole (abbreviation: TAZ), 3-(4-tert-butylphenyl)-4-(4- p-(4-biphenylyl)-5-(ethylphenyl)-1,2,4-triazole EtTAZ), bathophenanthroline (abbreviated as Bphen), bathocuproine (abbreviated as BCP), 4,4'-bis(5-methylbenzoxazol-2-yl)stilbene (abbreviation Heteroaromatic compounds such as 2-[3-(dibenzothiophen-4-yl)phenyl]phenyl]propanol, phenyl]dibenzo[f,h]quinoxaline (abbreviation: 2mDBTPDBq-II), 2-[ 3'-(dibenzothiophen-4-yl)biphenyl-3-yl]dibenzo[f,h]ky Noxalin (abbreviation: 2mDBTBPDBq-II), 2-[4-(3,6-diphenyl- 9H-carbazol-9-yl)phenyl]dibenzo[f,h]quinoxaline (abbreviation: 2 CzPDBq-III), 7-[3-(dibenzothiophen-4-yl)phenyl]dibenzyl Benzo[f,h]quinoxaline (abbreviation: 7mDBTPDBq-II), 6-[3-(dibenzo[f,h]quinoxaline] 6mDB Use of quinoxaline or dibenzoquinoxaline derivatives such as TPDBq-II can be done.

[0439] In addition, poly(2,5-pyridinediyl) (abbreviation: PPy), poly[(9,9-dihexyl fluorene-2,7-diyl)-co-(pyridine-3,5-diyl)] (abbreviation: PF- Py), poly[(9,9-dioctylfluorene-2,7-diyl)-co-(2,2' -bipyridine-6,6'-diyl)] (abbreviation: PF-BPy) You can also be there.

[0440] The electron transport layer 724 may be a single layer or may be a laminate of two or more layers made of the above-mentioned materials. The structure may be as follows.

[0441] <<Electron injection layer 725>> The electron injection layer 725 is a layer containing a substance with a high electron injection property. Lithium fluoride (LiF), Cesium fluoride (CsF), Calcium fluoride (CaF2), Lithium oxide (LiO x ) and the like, alkali metals, alkaline earth metals, or their Compounds can be used, as well as rare earth metals such as erbium fluoride (ErF3). The electron-injecting layer 725 may be formed using an electride. For example, an electride is a mixed oxide of calcium and aluminum with high electron density. The above-mentioned substance constituting the electron transport layer 724 may be used. You can also be there.

[0442] In addition, the electron injection layer 725 is made of a composite material obtained by mixing an organic compound and an electron donor (donor). Such composite materials are formed by electron donors generating electrons in organic compounds. Therefore, it has excellent electron injection and electron transport properties. It is preferable that the material is excellent in transporting the generated electrons. Specifically, for example, the above-mentioned electron The electron transporting material (metal complex, heteroaromatic compound, etc.) used for the transport layer 724 can be used. The electron donor may be any substance that exhibits electron donating properties to organic compounds. Specifically, alkali metals, alkaline earth metals and rare earth metals are preferred, and lithium, cesium, Examples of the elements include aluminum, magnesium, calcium, erbium, and ytterbium. Alkali metal oxides and alkaline earth metal oxides are preferred, and lithium oxide, calcium oxide, Examples of suitable cations include barium oxide and barium nitrate. It is also possible to use organic compounds such as tetrathiafulvalene (TTF). It is also possible to do so.

[0443] <<Charge generation layer 792>> When a voltage is applied between the conductor 772 and the conductor 788, the charge generation layer 792 generates a Of the two EL layers 786 in contact with the charge generating layer 792, the EL layer 786 closest to the conductor 772 788 and injects holes into the EL layer 786 on the side closer to the conductor 788. For example, in the light-emitting element 572 having the structure shown in FIG. 39(C), the charge generation layer 792 is It has a function of injecting electrons into the EL layer 786a and injecting holes into the EL layer 786b. The charge generation layer 792 is made of a hole transport material to which an electron acceptor is added. Alternatively, an electron donor (donor) may be added to the electron transporting material. In addition, both of these structures may be laminated. By forming the layer 792, the driving of the display device 810 when the EL layer is laminated is The voltage rise can be suppressed.

[0444] In the charge generation layer 792, when an electron acceptor is added to a hole transporting material, As an electron acceptor, 7,7,8,8-tetracyano-2,3,5,6-tetrafluoro Examples include quinodimethane (abbreviation: F4-TCNQ), chloranil, etc. Examples include oxides of metals belonging to groups 4 to 8 of the periodic table. are vanadium oxide, niobium oxide, tantalum oxide, chromium oxide, molybdenum oxide, tantalum oxide Examples of suitable oxides include rhenium oxide, manganese oxide, and rhenium oxide.

[0445] In the charge generation layer 792, when an electron donor is added to an electron transporting material, The electron donor may be an alkali metal, an alkaline earth metal, a rare earth metal, or an element of the periodic table. Metals belonging to Groups 2 and 13 of the above, as well as their oxides and carbonates, can be used. Specifically, lithium (Li), cesium (Cs), magnesium (Mg), calcium ( Ca), ytterbium (Yb), indium (In), lithium oxide, cesium carbonate, etc. It is also preferable to use an organic compound such as tetrathianaphthacene as an electron donor. It may also be used as.

[0446] The light emitting element 572 can be fabricated by a vacuum process such as evaporation, or by a spin coating method or inkjet printing. A solution process such as a jet method can be used. When using a vapor deposition method, methods such as the ion plating method, ion beam deposition method, molecular beam deposition method, and vacuum deposition method. Physical vapor deposition (PVD) or chemical vapor deposition (CVD) can be used. The functional layers included in the EL layer of the device (hole injection layer, hole transport layer, light-emitting layer, electron transport layer, electron injection layer) For the charge generation layer, deposition methods (vacuum deposition, etc.) and coating methods (dip coating , die coating method, bar coating method, spin coating method, spray coating method, etc.), printing method (ink Jet printing, screen printing, offset printing, flexography It can be formed by a method such as a printing method, a gravure method, a microcontact method, etc. .

[0447] Note that each functional layer (hole injection layer, hole transport layer, etc.) constituting the EL layer of the light-emitting element shown in this embodiment The materials for the charge generation layer (electron transport layer, light emitting layer, electron transport layer, electron injection layer) and the charge generation layer are limited to the materials mentioned above. However, other materials can be used in combination as long as they can fulfill the functions of each layer. Examples include polymer compounds (oligomers, dendrimers, polymers, etc.) ), medium molecular weight compounds (compounds in the intermediate range between low molecular weight and high molecular weight: molecular weight 400 to 4000), Organic compounds (quantum dot materials, etc.) can be used. , colloidal quantum dot materials, alloy-type quantum dot materials, core-shell type quantum dot materials, Core-type quantum dot materials and the like can be used.

[0448] The display device 810 described in this embodiment can be applied to the light source described in Embodiment 1. By applying the display device 810 to the light source shown in the first embodiment, it is possible to The elements can be arranged at high density. The facial features of the user of the electronic device, such as the facial expression of the user, can be accurately recognized.

[0449] FIG. 40A is a cross-sectional view illustrating a configuration example of an imaging device according to one embodiment of the present invention. As shown in FIG. 1, a transistor 1003 and a light-emitting element 5 are disposed between the substrate 1001 and the substrate 995. 72, the photoelectric conversion element 1010, the colored layer 993, etc., can be sandwiched. Here, the transistor 1003 can be, for example, an OS transistor. In FIG. 40A, four transistors 1003 are shown.

[0450] An insulator 1002 is provided on a substrate 1001, and a transistor 100 is formed on the insulator 1002. An insulator 1004 is provided on the transistor 1003, and an insulator 100 An insulator 1005 is provided on the light emitting element 572 and the photoelectric conversion element 573. A region where the conversion element 1010 is provided and overlaps with the light emitting element 572 or the photoelectric conversion element 1010 In FIG. 40(A), the colored layer 993 is provided so as to have two light-emitting elements 572 ( light-emitting element 572_1, light-emitting element 572_2), and two photoelectric conversion elements 1010 (photoelectric conversion The photoelectric conversion element 1010_1 and the photoelectric conversion element 1010_2 are shown. 40(A) shows a configuration in which the transistor 1003 is electrically connected to the , a colored layer having a function of transmitting red light so as to have an area overlapping with the light-emitting element 572_1. A colored layer 993R, which is a layer 993, is provided so as to have a region overlapping with the light-emitting element 572_2. As shown in FIG. 1, a colored layer 993IR is provided, which is a colored layer 993 having a function of transmitting infrared light. The colored layer 1010_1 is arranged to have an area overlapping with the photoelectric conversion element 1010_1. 993R is provided, and the colored layer 99 is provided so as to have an area overlapping with the photoelectric conversion element 1010_2. The configuration in which 3IR is provided is shown.

[0451] The photoelectric conversion element 1010 converts light L irradiated from outside the imaging device. ex The received light L ex It has the function of converting the light into an electrical signal corresponding to the illuminance.

[0452] The light emitting element 572 preferably has the function of emitting white light and infrared light. The light emitted from the light emitting element 572_1 passes through the colored layer 993R and is captured as red light R. The light emitted from the light emitting element 572_2 is reflected by the colored layer 99. The light passes through the IR and is emitted outside the imaging device as infrared light IR. The red light R and infrared light IR are reflected by an object and illuminated by the photoelectric conversion element 1010. For example, the imaging device having the configuration shown in FIG. 40(A) may be used in the eyeglass-type electronic imaging device shown in the first embodiment. When applied to a device, red light R and infrared light IR are projected onto the face of the user of the eyeglass-type electronic device. Irradiated and reflected light L ex can be detected by the photoelectric conversion element 1010.

[0453] The imaging device has the function of detecting both red light and infrared light, so that the image can be captured by the imaging device. In the case where the imaging device has a function of detecting only one of the above, for example, the imaging device can be This makes it possible to accurately detect the condition of the eyes and surrounding areas of the user of the child device. For example, the electronic device according to one embodiment of the present invention can accurately recognize the facial features of a user, such as the facial expression of the user. Therefore, the electronic device of one embodiment of the present invention can correctly measure the fatigue level, emotions, etc. of the user, for example. It can have the function of accurately estimating.

[0454] Note that when the display device of one embodiment of the present invention includes a photoelectric conversion element, the display device is In this case, the display device may have a function of transmitting red light. The light emitting element 572 has an area overlapping with the colored layer 993 having a function of transmitting infrared light. In addition to the light emitting element 572 having an area overlapping with the colored layer 993 having the function of transmitting green light, The light emitting element 572 has an area overlapping with the colored layer 993 having a function of transmitting blue light. A light emitting element 572 having a region overlapping with a coloring layer 993 having a function is provided.

[0455] The conductor 772, the EL layer 786, and the conductor 788 form the light-emitting element 572. The conductor 772, the active layer 1011, and the conductor 788 constitute the photoelectric conversion element 10. 10 is formed. Here, the transistor 1003 is electrically connected to the conductor 772. do.

[0456] The active layer 1011 is a laminated layer in which a p-type semiconductor and an n-type semiconductor are laminated to realize a pn junction. A pin junction is realized by stacking p-type, i-type, and n-type semiconductors. It may have a laminated structure or the like.

[0457] The semiconductor used in the active layer 1011 is an inorganic semiconductor such as silicon or an organic compound. In particular, organic semiconductor materials can be used to form light-emitting elements 57. The second EL layer 786 and the active layer 1011 can be easily formed by the same vacuum deposition method. This is preferable because it makes it easier to manufacture and allows the manufacturing equipment to be shared.

[0458] When an organic semiconductor material is used for the active layer 1011, the n-type semiconductor material is preferably a fluorine-based compound. -ren (e.g. C 60 , C 70 etc.) or their derivatives, etc. As a p-type semiconductor material, copper (II) phthalocyanine (Co copper(II) phthalocyanine (CuPc) and tetraphenyldibenzo Tetraphenyldibenzoperiflanthene The active layer 1011 can be made of an electron-donating organic semiconductor material such as SiO 2 (SiO 3 ; DBP). As a stacked structure of electron-accepting and electron-donating semiconductor materials (pn stacked structure) Alternatively, an electron-accepting semiconductor material and an electron-donating semiconductor material may be co-deposited between them. It may also be a stacked structure (pin stacked structure) with a bulk heterostructure layer. In order to suppress dark current when no light is irradiated, the above pn stack structure or pin stack structure A layer that functions as a hole blocking layer or an electron blocking layer is placed around the structure (upper or lower). A layer functioning as the above may be provided.

[0459] In the light-emitting element 572, an EL layer 786 is provided on the conductor 772. In the conversion element 1010, an active layer 1011 is provided on the conductor 772. A conductor 788 is provided to cover the EL layer 786 and the active layer 1011. The conductor 788 serves as both the electrode of the light-emitting element 572 and the electrode of the photoelectric conversion element 1010. It is possible to configure it to serve both purposes.

[0460] FIG. 40B is a cross-sectional view illustrating a configuration example of an imaging device of one embodiment of the present invention. The imaging device having the configuration shown in FIG. The difference from the imaging device shown in FIG. 40(A) is that the image pickup device is not shaded.

[0461] When the electronic device of one embodiment of the present invention has an imaging device having the structure illustrated in FIG. By providing a light source outside the device, the imaging device can detect light emitted from the light source. For example, the imaging device having the configuration shown in FIG. 40B can be used in the eyeglass-type electronic imaging device shown in Embodiment 1. When applied to a device, the face of the user of the eyeglass-type electronic device is exposed to red light emitted from the light source. Colored light and infrared light are irradiated and the reflected light L ex is detected by the photoelectric conversion element 1010. It is possible.

[0462] By using an imaging device included in an electronic device of one embodiment of the present invention with the structure shown in FIG. In this imaging device, the photoelectric conversion elements 1010 can be provided at high density.

[0463] The configuration examples exemplified in this embodiment and the corresponding drawings etc. are at least partially It can be implemented in appropriate combination with other configuration examples or drawings, etc.

[0464] This embodiment may be appropriately combined with at least a part of another embodiment described in this specification. It can be implemented in combination.

[0465] (Embodiment 3) In this embodiment, a transistor that can be used in a display device according to one embodiment of the present invention will be described. We will explain about this.

[0466] <Transistor configuration example 1> 41A, 41B, and 41C show a display device that can be used in one embodiment of the present invention. 1A and 1B are a top view and a cross-sectional view of a transistor 200A and the periphery of the transistor 200A. The pixel array 833, the gate driver circuit 821, the source driver circuit 822, and the like shown in the first embodiment 822 and the transistor 200A is applied to the transistor included in the circuit 840. can be done.

[0467] FIG. 41(A) is a top view of the transistor 200A. Also, FIGS. 41(B) and 41(C) are 41(B) is a cross-sectional view of the transistor 200A. 1A is a cross-sectional view of the portion indicated by the dashed line in the direction of the channel length of the transistor 200A. FIG. 41(C) is also a cross-sectional view. 1 is a cross-sectional view of the transistor 200A in the channel width direction. In the top view of 41(A), some elements are omitted for clarity.

[0468] The transistor 200A includes a metal oxide 230a disposed on a substrate (not shown). , a metal oxide 230b disposed on the metal oxide 230a, and a metal oxide 230b disposed on the metal oxide 230b. Conductor 242a and conductor 242b are spaced apart from each other, and conductor 242a and conductor 242b, and an opening is formed between conductor 242a and conductor 242b. the insulator 280 formed thereon, the conductor 260 disposed in the opening, and the metal oxide 230b; The conductor 242a, the conductor 242b, and the insulator 280 are disposed between the conductor 260. The insulator 250 is made of a metal oxide 230b, a conductor 242a, a conductor 242b, and an insulator. The metal oxide 230c is disposed between the insulating body 280 and the insulating body 250. As shown in FIGS. 41B and 41C, the upper surface of the conductor 260 is covered with the insulator 250. 254, metal oxide 230c, and insulator 280. In the following, metal oxide 230a, metal oxide 230b, and metal oxide 230c These may be collectively referred to as metal oxide 230. b may be collectively referred to as conductor 242.

[0469] As shown in FIG. 41B, the transistor 200A includes a conductor 242a and a conductor 242b. The side surface of the transformer 260 of the transformer b has a substantially vertical shape. The resistor 200A is not limited to this, and may be formed of the conductors 242a and 242b. The angle between the side and bottom is 10° to 80°, preferably 30° to 60°. Alternatively, the opposing side surfaces of the conductor 242a and the conductor 242b may have multiple surfaces. It may be possible.

[0470] As shown in FIGS. 41B and 41C, the insulator 224, the metal oxide 230a, the metal oxide The metal oxide 230c is made of an insulator 230b, a conductor 242a, a conductor 242b, and a metal oxide 230c. 80 and an insulator 254 is preferably disposed between them. As shown in 41(B) and 41(C), the side surface of the metal oxide 230c, the top surface of the conductor 242a, and The side surface, the top surface and side surface of the conductor 242b, the side surface of the metal oxide 230a, and the top surface and side surface of the metal oxide 230b It is preferable that the insulating material 224 has a side surface and an area in contact with the top surface of the insulating material 224 .

[0471] In the transistor 200A, a region where a channel is formed (hereinafter, referred to as a channel forming region) ) and in the vicinity thereof, metal oxide 230a, metal oxide 230b, and gold Although the present invention is not limited to a structure in which three layers of metal oxide 230c are stacked, For example, a two-layer structure of metal oxide 230b and metal oxide 230c, or a four-layer structure The above stacked structure may be provided. Although 60 is shown as a two-layer laminated structure, the present invention is not limited to this. For example, the conductor 260 may have a single layer structure or a laminated structure of three or more layers. In addition, each of the metal oxides 230a, 230b, and 230c is 2 It may have a laminated structure of more than one layer.

[0472] For example, metal oxide 230c may comprise a first metal oxide and a second metal oxide on the first metal oxide. In the case where the first metal oxide has a laminated structure made of a metal oxide, the first metal oxide is The second metal oxide preferably has a composition similar to that of the metal oxide 230a. It's nice.

[0473] Here, the conductor 260 functions as the gate electrode of the transistor, and the conductors 242a and The conductors 242b function as a source electrode and a drain electrode, respectively. The conductor 260 is sandwiched between the opening of the insulator 280 and the conductors 242a and 242b. The conductor 260, the conductor 242a, and the conductor 242b are formed so as to be embedded in the region. The placement of the conductive material 242b is selected to be self-aligned with the opening of the insulator 280. In the transistor 200A, the gate electrode is connected between the source electrode and the drain electrode. Therefore, the conductor 260 can be arranged in a self-aligned manner with a margin for alignment. Since the transistor 200A can be formed without any additional wiring, the area occupied by the transistor 200A can be reduced. This allows the display device to have high definition. It can be made into an edge.

[0474] As shown in FIG. 41, the conductor 260 is formed by the conductor 2 provided inside the insulator 250. 60a and a conductor 260b provided so as to be embedded inside the conductor 260a. It is preferable to have

[0475] As shown in FIGS. 41(A), (B), and (C), the transistor 200A has a substrate ( (not shown). 16, a conductor 205 disposed so as to be embedded in an insulator 216, and an insulator 216. An insulator 222 is disposed on the conductor 205, and an insulator 222 is disposed on the insulator 222. 24. Also, a metal oxide 230a is disposed on the insulator 224. It is preferable that this be done.

[0476] In addition, an insulator 274 serving as an interlayer film and an insulator 2 Here, the insulator 274 is preferably disposed between the conductor 260 and the insulator 25. 0, insulator 254, metal oxide 230c, and insulator 280 are disposed in contact with the upper surfaces thereof. It is preferable that:

[0477] The insulators 222, 254, and 274 are made of hydrogen (e.g., hydrogen atoms, hydrogen molecules, etc.). For example, the insulator 22 has a function of suppressing the diffusion of at least one of the above. 2, insulator 254, and insulator 274 are insulators 224, 250, and 28 It is preferable that the hydrogen permeability is lower than 0. Also, the insulator 222 and the insulator 254 are The material has the function of suppressing the diffusion of oxygen (for example, at least one of oxygen atoms, oxygen molecules, etc.). For example, the insulator 222 and the insulator 254 are preferably , and preferably has lower oxygen permeability than insulator 280.

[0478] Here, the insulator 224, the metal oxide 230, and the insulator 250 are insulator 280 and insulating The insulator 281 is separated from the insulator 254 by the insulator 274. 224, metal oxide 230, and insulator 250, insulator 280 and insulator 281 This can prevent impurities such as hydrogen and excessive oxygen from being mixed in.

[0479] Also, a conductor 240 (conductor) electrically connected to the transistor 200A and functioning as a plug It is preferable that a conductor 240a and a conductor 240b are provided. The insulator 241 (insulator 241a and insulator 241b) is disposed on the side of the functional conductor 240. b) are provided. That is, the insulator 254, the insulator 280, the insulator 274, and the insulator 2 An insulator 241 is provided in contact with the inner wall of the opening of the insulating member 81. The first conductor of the conductor 240 is provided on the inner side, and the second conductor of the conductor 240 is provided on the inner side. Here, the height of the upper surface of the conductor 240 and the height of the upper surface of the insulator 281 may be In the transistor 200A, the first conductor of the conductor 240 The present invention is not limited to the above-described configuration in which the first conductor and the second conductor of the conductor 240 are stacked. For example, the conductor 240 may be a single layer or a laminated structure of three or more layers. When the structure has a laminated structure, ordinal numbers are assigned in the order of formation, and the layers are divided into groups. There may be cases where they are separated.

[0480] The transistor 200A also includes a metal oxide 230 (metal oxide 230a, metal oxide 230b, and metal oxide 230c) function as oxide semiconductors. It is preferable to use a metal oxide (hereinafter also referred to as an oxide semiconductor) having such a metal oxide. The metal oxide forming the channel region of the metal oxide 230 is, as described above, a band gap metal oxide. It is preferable to use one with a gap of 2 eV or more, preferably 2.5 eV or more.

[0481] As shown in FIG. 41(B), the metal oxide 230b is formed in a region that does not overlap with the conductor 242. The thickness of the film in the region overlapping with the conductor 242 may be thinner than the thickness of the film in the region overlapping with the conductor 242. When forming the metal oxide film 242a and the conductor 242b, a part of the upper surface of the metal oxide film 230b is removed. On the upper surface of the metal oxide 230b, a conductive film that becomes the conductor 242 is formed. When the film is formed, a region with low resistance may be formed near the interface with the conductive film. As such, the metal oxide 230b is located between the conductor 242a and the conductor 242b on the upper surface thereof. By removing the low resistance region, the formation of a channel in that region is suppressed. It is possible.

[0482] According to one embodiment of the present invention, a display device having a small-sized transistor and high resolution can be provided. Alternatively, a display device having a transistor with large on-state current and high luminance can be provided. Alternatively, a display device having a high-speed transistor and a high-speed operation can be provided. Alternatively, a highly reliable display device having a transistor with stable electrical characteristics can be provided. Alternatively, a display device having a transistor with low off-state current and low power consumption can be provided. It is possible to provide a display device with low

[0483] Detailed structure of a transistor 200A that can be used in a display device according to one embodiment of the present invention This article explains:

[0484] The conductor 205 is arranged so as to have an overlapping region with the metal oxide 230 and the conductor 260. In addition, the conductor 205 is preferably embedded in the insulator 216. Therefore, it is preferable to improve the flatness of the upper surface of the conductor 205. For example, The average surface roughness (Ra) of the upper surface is 1 nm or less, preferably 0.5 nm or less, and more preferably 0 This allows the insulator 224 formed on the conductor 205 to be 0.3 nm or less. and improve the crystallinity of the metal oxide 230b and the metal oxide 230c. It is possible.

[0485] Here, the conductor 260 functions as a first gate (also called a top gate) electrode. The conductor 205 may also be used as a second gate (also called a back gate) electrode. In this case, the potential applied to the conductor 205 may be changed to the potential applied to the conductor 260. By changing the voltage independently of the voltage applied to the transistor 200A, the V th Control In particular, applying a negative potential to the conductor 205 can control the transistor. 200A V th By increasing the voltage above 0 V, it is possible to reduce the off-state current. Therefore, applying a negative potential to the conductor 205 increases the current density of the conductor 260 compared to when no negative potential is applied. The drain current of the transistor 200A when the potential applied to the can.

[0486] The conductor 205 is formed to be larger than the channel forming region in the metal oxide 230. In particular, as shown in FIG. 41(C), the conductor 205 is formed in the channel of the metal oxide 230. It is preferable that the film is stretched also in the region outside the end portion intersecting with the width direction of the film. The metal oxide 230 is provided on the outer side of the side surface in the channel width direction with a conductor 205 and a conductor It is preferable that the current collector 260 is overlapped with an insulator interposed therebetween.

[0487] With the above configuration, the electric field of the conductor 260 that functions as the first gate electrode and The metal oxide 23 is then electrically connected to the conductor 205, which functions as a second gate electrode. The channel forming region of 0 can be electrically surrounded.

[0488] As shown in FIG. 41(C), the conductor 205 is extended to function as a wiring. However, the present invention is not limited to this, and a conductive material that functions as a wiring may be provided under the conductive material 205. A body may be provided.

[0489] The conductor 205 is made of a conductive material containing tungsten, copper, or aluminum as a main component. Although the conductor 205 is illustrated as a single layer, it may have a laminated structure. For example, a laminate of titanium or titanium nitride and the above conductive material may be used.

[0490] Also, hydrogen atoms, hydrogen molecules, water molecules, nitrogen atoms, nitrogen molecules, and nitrogen oxides are present under the conductor 205. It has the function of suppressing the diffusion of impurities such as molecules (N2O, NO, NO2, etc.) and copper atoms (see above). Alternatively, a conductor may be provided that is impervious to impurities. A conductive material having a function of suppressing the diffusion of at least one of the oxygen molecules (the oxygen is difficult to permeate). In this specification, it is preferable to provide a conductive material to suppress the diffusion of impurities or oxygen. The function of suppressing the diffusion of either or both of the above impurities and the above oxygen is Let's say.

[0491] By providing a conductor having a function of suppressing oxygen diffusion under the conductor 205, This can prevent the conductivity of the conductive material 205 from decreasing due to oxidation. Examples of the conductive material having the function of providing the above-mentioned resistance include tantalum, tantalum nitride, ruthenium, and It is preferable to use ruthenium oxide or the like. The conductive material may be a single layer or a multilayer.

[0492] The insulator 214 prevents impurities such as water or hydrogen from entering the transistor 200A from the substrate side. It is preferable that the insulator has a function as a barrier insulating film that suppresses this. 214 is a hydrogen atom, a hydrogen molecule, a water molecule, a nitrogen atom, a nitrogen molecule, a nitrogen oxide molecule (N2O, It has the function of suppressing the diffusion of impurities such as NO, NO2, copper atoms (the above impurities do not penetrate It is preferable to use an insulating material. Insulation that has the function of suppressing the diffusion of at least one of the molecules (the oxygen is difficult to permeate) It is preferable to use a non-reactive material.

[0493] For example, it is preferable to use aluminum oxide or silicon nitride as the insulator 214. This allows impurities such as water or hydrogen to pass through the insulator 214 from the substrate side to the transistor. Diffusion to the 200A side can be suppressed. This can prevent the element from diffusing toward the substrate side of the insulator 214.

[0494] The insulators 216, 280, and 281, which function as interlayer films, are insulators It is preferable that the relative dielectric constant is lower than that of 214. By using a material with a low relative dielectric constant as the interlayer film, , the parasitic capacitance occurring between the wirings can be reduced. For example, the insulator 216 and the insulator 28 0, and as the insulator 281, silicon oxide, silicon oxynitride, silicon nitride oxide, nitride silicon dioxide, fluorine-doped silicon dioxide, carbon-doped silicon dioxide, carbon and nitrogen Silicon oxide to which oxygen is added, silicon oxide having vacancies, or the like may be used as appropriate.

[0495] The insulators 222 and 224 function as gate insulators.

[0496] Here, the insulator 224 in contact with the metal oxide 230 is preferably capable of desorbing oxygen by heating. In this specification, the oxygen released by heating may be referred to as excess oxygen. For example, The insulator 224 may be made of silicon oxide, silicon oxynitride, or the like as appropriate. By providing an insulator containing the metal oxide 230 in contact with the metal oxide 230, oxygen vacancies in the metal oxide 230 can be eliminated. This can reduce the resistance and improve the reliability of the transistor 200A.

[0497] Specifically, the insulator 224 is made of an oxide material from which part of the oxygen is released by heating. The oxide that releases oxygen by heating is preferably a TDS (Thermal Desorption In the sorption spectroscopy analysis, the amount of oxygen converted to oxygen atoms was The amount of desorption is 1.0×10 18 atoms / cm 3 or more, preferably 1.0 × 10 19 ato ms / cm 3 More preferably, 2.0 × 10 19 atoms / cm 3 or more, or 3 .0×10 20 atoms / cm 3 The oxide film is as above. The surface temperature of the film is 100°C or more and 700°C or less, or 100°C or more and 400°C or less. The lower range is preferred.

[0498] As shown in FIG. 41C, the insulator 224 does not overlap with the insulator 254 and is made of metal. The film thickness of the region that does not overlap with the oxide 230b may be thinner than the film thickness of the other region. In the insulator 224, the portion that does not overlap with the insulator 254 and the metal oxide 230b is The thickness of the region free of oxygen is preferably such that the oxygen can be sufficiently diffused.

[0499] The insulator 222, like the insulator 214, prevents impurities such as water or hydrogen from penetrating the transistor from the substrate side. It is preferable that the insulating film has a function as a barrier insulating film that prevents the inclusion of the insulating film in the resistor 200A. For example, it is preferable that the insulator 222 has a lower hydrogen permeability than the insulator 224. The insulator 224, the metal oxide 230 are formed by the insulator 222, the insulator 254, and the insulator 274. By surrounding the insulator 250 and the like, impurities such as water or hydrogen from the outside can be prevented from entering the transistor. It is possible to prevent the current from reaching 200A.

[0500] Furthermore, the insulator 222 is resistant to the diffusion of oxygen (e.g., at least one of oxygen atoms, oxygen molecules, etc.). It is preferable that the insulator 2 has a function of suppressing the oxygen permeation (i.e., the oxygen is less likely to permeate). Preferably, insulator 222 has a lower oxygen permeability than insulator 224. By having the function of suppressing the diffusion of impurities, the oxygen contained in the metal oxide 230 does not migrate to the substrate side. In addition, the conductor 205 is preferably formed of the insulator 224. This can prevent the reaction between the oxygen contained in the metal oxide 230 and the oxygen contained in the metal oxide 230 .

[0501] The insulator 222 is an oxide of one or both of aluminum and hafnium, which are insulating materials. It is advisable to use an insulator containing oxides of one or both of aluminum and hafnium. It is preferable to use aluminum oxide or hafnium oxide as the insulating material. It is preferable to use oxides containing aluminum and hafnium (hafnium aluminate). When the insulator 222 is formed using such a material, the insulator 222 is preferably a metal oxide. The release of oxygen from the metal oxide 230 and the removal of the metal oxide 230 from the periphery of the transistor 200A. The layer functions as a layer that suppresses the intrusion of impurities such as hydrogen into the semiconductor layer.

[0502] Alternatively, these insulators may be made of, for example, aluminum oxide, bismuth oxide, or germanium oxide. , niobium oxide, silicon oxide, titanium oxide, tungsten oxide, yttrium oxide, oxide Zirconium may be added, or these insulators may be nitrided. Silicon oxide, silicon oxynitride, or silicon nitride may be laminated on the body.

[0503] The insulator 222 may be, for example, aluminum oxide, hafnium oxide, tantalum oxide, or oxide. Zirconium oxide, lead zirconate titanate (PZT), strontium titanate (SrTi Insulators containing so-called high-k materials such as (Ba,Sr)TiO3 (BST) or (Ba,Sr)TiO3 (BST) As transistors become smaller and more highly integrated, Thinning of the gate insulator may cause problems such as leakage current. By using high-k materials as insulators that function as a transistor, the physical thickness can be maintained. This makes it possible to reduce the gate potential during start operation.

[0504] The insulator 222 and the insulator 224 may have a laminated structure of two or more layers. In this case, the laminate structure is not limited to the same material, but may be a laminate structure made of different materials. For example, an insulator similar to the insulator 224 may be provided below the insulator 222.

[0505] The metal oxide 230 is a metal oxide 230a and a metal oxide 230 on the metal oxide 230a. b and a metal oxide 230c on the metal oxide 230b. By having the metal oxide 230a in the It is possible to suppress the diffusion of impurities from the metal oxide 230b to the metal oxide 230b. By having the metal oxide 230c on the metal oxide 230b, the metal oxide 230c is The diffusion of impurities from the structure formed on the other side to the metal oxide 230b can be suppressed. do.

[0506] The metal oxide 230 has a laminated structure of a plurality of oxide layers with different atomic ratios of each metal atom. Specifically, the metal oxide used for the metal oxide 230a preferably has the following properties: The atomic ratio of element M in the constituent elements is It is preferable that the atomic ratio of the element M in the metal oxide 230a is larger than that of the element M in the metal oxide 230a. In the metal oxide used, the atomic ratio of element M to In is In the metal oxide, the atomic ratio of element M to In is preferably larger than that of element M. In the metal oxide used for the metal oxide 230b, the atomic ratio of In to the element M is In the metal oxide used for the metal oxide 230a, the atomic ratio of In to the element M is greater than In addition, the metal oxide 230c is preferably the same as the metal oxide 230a or the metal oxide Any metal oxide that can be used for 230b can be used.

[0507] The metal oxide 230a, the metal oxide 230b, and the metal oxide 230c have crystallinity. It is preferable to use CAAC-OS (c-axis aligned crystal). It is preferable to use a line oxide semiconductor. Crystalline oxides such as AC-OS have few impurities and defects (oxygen vacancies, etc.) and are crystalline. Therefore, the metal oxide film formed by the source electrode or the drain electrode is This can suppress the extraction of oxygen from the oxide 230b. Even in this case, it is possible to prevent oxygen from being extracted from the metal oxide 230b. Therefore, the transistor 200A is subjected to high temperatures (so-called thermal budget) during the manufacturing process. ) is stable.

[0508] In addition, the energy of the bottom of the conduction band of the metal oxide 230a and the metal oxide 230c is It is preferable that the energy of the SiO 2 layer is higher than the energy of the bottom of the conduction band of the oxide 230b. The electron affinity of the metal oxide 230a and the metal oxide 230c is In this case, the metal oxide 230c has an electron affinity smaller than that of the metal oxide 230c. It is preferable to use a metal oxide that can be used for 30a. In the metal oxide used in the product 230c, the atomic ratio of element M in the constituent elements is In the metal oxide used in 230b, the atomic ratio of element M in the constituent elements is larger than that In addition, in the metal oxide used for the metal oxide 230c, the element M relative to In is preferably The atomic ratio of the element M to In in the metal oxide used for the metal oxide 230b is It is preferable that the atomic ratio is larger than that of the metal oxide 230b. In the metal oxide 230c, the atomic ratio of In to the element M is It is preferable that the atomic ratio of In to the element M is larger than that of In.

[0509] Here, at the junction of the metal oxide 230a, the metal oxide 230b, and the metal oxide 230c, In other words, the energy level of the conduction band minimum changes gradually. The energy of the conduction band minimum at the junction of the metal oxide 230a, the metal oxide 230b, and the metal oxide 230c. The energy level can be said to change continuously or to be a continuous junction. In order to achieve this, the interface between the metal oxide 230a and the metal oxide 230b and the metal oxide 230b The defect level density of the mixed layer formed at the interface between the metal oxide 230c and the silicon dioxide 230a is preferably reduced. stomach.

[0510] Specifically, the metal oxide 230a and the metal oxide 230b, the metal oxide 230b and the metal oxide The substance 230c has a common element other than oxygen (as a main component), so that the defect level density For example, a low intermixed layer can be formed when the metal oxide 230b is an In-Ga-Zn oxide. In the case of the oxide, the metal oxide 230a and the metal oxide 230c are In-Ga-Zn oxide. Alternatively, a metal oxide 230c, a Ga-Zn oxide, a gallium oxide, etc. may be used. For example, a layer structure may be used. A laminated structure of In-Ga-Zn oxide on the In-Ga-Zn oxide, or a laminated structure of In-Ga-Zn oxide and the In-Ga- A layered structure of gallium oxide on Zn oxide can be used. A laminated structure of a-Zn oxide and an oxide not containing In was used as the metal oxide 230c. It's fine.

[0511] Specifically, the metal oxide 230a is In:Ga:Zn=1:3:4 [atomic ratio], Alternatively, a metal oxide having an atomic ratio of 1:1:0.5 may be used. b is In:Ga:Zn=4:2:3 [atomic ratio] or 3:1:2 [atomic ratio] The metal oxide 230c may be In:Ga:Zn=1: 3:4 [atomic ratio], In:Ga:Zn=4:2:3 [atomic ratio], Ga:Zn=2:1 [atomic ratio], or a metal oxide of Ga:Zn=2:5 [atomic ratio] may be used. A specific example of the metal oxide 230c having a laminated structure is In:Ga:Zn=4: 2:3 [atomic ratio] and Ga:Zn=2:1 [atomic ratio] layered structure, In:Ga:Zn = 4:2:3 [atomic ratio] and Ga:Zn = 2:5 [atomic ratio], :Zn=4:2:3 [atomic ratio] and gallium oxide.

[0512] At this time, the main path of the carriers is the metal oxide 230b. By configuring the metal oxide 230a and the metal oxide 230c as described above, Defect levels at the interface with metal oxide 230b and the interface between metal oxide 230b and metal oxide 230c The density can be reduced, so the effect of interface scattering on carrier conduction is small. As a result, the transistor 200A can achieve a high on-state current and high frequency characteristics. When the metal oxide 230c has a laminated structure, the metal oxide 230b and the metal oxide In addition to the effect of reducing the defect level density at the interface with the metal oxide 230c, It is expected that the constituent elements of the insulating material 250 are prevented from diffusing into the insulating material 250. Specifically, the metal oxide 230c has a laminated structure, and an oxide layer not containing In is provided above the laminated structure. By positioning the object, it is possible to suppress In that may diffuse to the insulator 250 side. 250 acts as a gate insulator, so if In diffuses, the transistor characteristics will be affected. Therefore, by forming the metal oxide 230c into a laminated structure, a highly reliable surface can be obtained. It is therefore possible to provide a display device.

[0513] The metal oxide 230 is preferably a metal oxide that functions as an oxide semiconductor. For example, the metal oxide that will be the channel forming region of the metal oxide 230 is a band gap metal oxide. It is preferable to use a material with a peak voltage of 2 eV or more, preferably 2.5 eV or more. By using a metal oxide with a wide band gap, the off-state current of a transistor can be reduced. By using such a transistor, a display device with low power consumption can be provided. can.

[0514] On the metal oxide 230b, a conductor 242 is formed, which functions as a source electrode and a drain electrode. (conductor 242a and conductor 242b) are provided. The conductor 242 is made of aluminum. Aluminum, chromium, copper, silver, gold, platinum, tantalum, nickel, titanium, molybdenum, tungsten Stainless steel, hafnium, vanadium, niobium, manganese, magnesium, zirconium, Selected from the group consisting of lilium, indium, ruthenium, iridium, strontium, and lanthanum. or an alloy containing the above-mentioned metal elements, or a combination of the above-mentioned metal elements. It is preferable to use alloys such as tantalum nitride, titanium nitride, tungsten, Nitrides containing titanium and aluminum, nitrides containing tantalum and aluminum, ruthenium oxide Ruthenium, ruthenium nitride, oxides containing strontium and ruthenium, lanthanum and nickel It is preferable to use oxides containing tantalum nitride, titanium nitride, titanium and tantalum nitride, etc. Aluminum nitride, tantalum and aluminum nitride, ruthenium oxide, nitride Ruthenium, oxides containing strontium and ruthenium, oxides containing lanthanum and nickel The material is a conductive material that is resistant to oxidation or that maintains its conductivity even after absorbing oxygen. preferable.

[0515] By providing the conductor 242 so as to be in contact with the metal oxide 230, The oxygen concentration may decrease near the conductor 242. In the vicinity of the conductor 242, the metal contained in the conductor 242 and the component of the metal oxide 230 In such a case, a metal compound layer containing The carrier density increases in the region near the body 242, and this region becomes a low resistance region.

[0516] Here, the region between the conductor 242a and the conductor 242b overlaps the opening of the insulator 280. This allows the conductor 260 to be self-aligned between the conductors 242a and 242b. The components can be arranged in a coordinated manner.

[0517] The insulator 250 functions as a gate insulator. The insulator 250 is preferably made of silicon oxide, silicon oxynitride, or the like. silicon nitride oxide, silicon nitride, silicon oxide doped with fluorine, and carbon doped Silicon oxide, silicon oxide doped with carbon and nitrogen, and silicon oxide with vacancies In particular, silicon oxide and silicon oxynitride are stable to heat. preferable.

[0518] The insulator 250, like the insulator 224, has an impurity concentration of water or hydrogen in the insulator 250. The thickness of the insulator 250 is preferably 1 nm or more and 20 nm or less. It is preferable.

[0519] Furthermore, a metal oxide may be provided between the insulator 250 and the conductor 260. It is preferable that the insulating material 250 has a function of suppressing oxygen diffusion from the insulating material 250 to the conductor 260. This makes it possible to suppress oxidation of the conductor 260 due to oxygen contained in the insulator 250. can.

[0520] The metal oxide may also function as a part of the gate insulator. Therefore, when silicon oxide or silicon oxynitride is used for the insulator 250, the metal oxide It is preferable to use metal oxide, which is a high-k material with a high dielectric constant, for the gate. The insulator has a stacked structure of the insulator 250 and the metal oxide, 0A can be made into a transistor that is stable against heat and has a high dielectric constant. The gate potential applied during transistor operation is adjusted while maintaining the physical thickness of the gate insulator. In addition, it is possible to reduce the equivalent oxide thickness of the insulator that functions as the gate insulator. It is possible to reduce the EOT.

[0521] Specifically, hafnium, aluminum, gallium, yttrium, zirconium, and titanium and the like, selected from the group consisting of titanium, tantalum, nickel, germanium, magnesium, etc. Metal oxides containing one or more of these metals can be used. or hafnium oxide, which is an insulator containing one or both of the oxides of aluminum oxide, Hafnium or oxides containing aluminum and hafnium (hafnium aluminate) It is preferable to use the following.

[0522] Although the conductor 260 is shown as having a two-layer structure in FIG. 41, it may have a single layer structure or a structure having three or more layers. The above laminated structure may also be used.

[0523] The conductor 260a is a hydrogen atom, a hydrogen molecule, a water molecule, a nitrogen atom, a nitrogen molecule, or a nitrogen oxide. Conductive material that suppresses the diffusion of impurities such as elementary molecules (N2O, NO, NO2, etc.) and copper atoms. It is preferable to use an electron or an electron-containing material such as oxygen (for example, oxygen atoms, oxygen molecules, etc.). It is preferable to use a conductive material that has the function of suppressing the diffusion of (i).

[0524] In addition, the conductor 260a has a function of suppressing the diffusion of oxygen, and thus the conductor 260a contained in the insulator 250 The conductor 260b is prevented from being oxidized by the oxygen contained therein, and the conductivity of the conductor 260b is prevented from decreasing. Examples of conductive materials that have the function of suppressing oxygen diffusion include It is preferable to use tantalum, tantalum nitride, ruthenium, ruthenium oxide, or the like.

[0525] The conductor 260b is made of a conductive material containing tungsten, copper, or aluminum as a main component. In addition, since the conductor 260 also functions as wiring, it is preferable to use a conductive material. It is preferable to use a conductor with a high electrical conductivity. For example, tungsten, copper, or aluminum can be used. The conductor 260b can be formed as a laminated structure. For example, a laminated structure of titanium or titanium nitride and the above conductive material may be used.

[0526] 41(A) and 41(C), the metal oxide 230b does not overlap with the conductor 242. In other words, in the channel forming region of the metal oxide 230, the metal oxide 2 The side surface of the first gate electrode 30 is covered with the conductor 260. The electric field of the conductor 260, which functions as a barrier, is easily applied to the side surface of the metal oxide 230. Therefore, the on-current of the transistor 200A is increased, and the periphery of the transistor 200A is The wave number characteristics can be improved.

[0527] The insulator 254, like the insulator 214, allows impurities such as water or hydrogen to pass through from the insulator 280 side. Therefore, it has a function as a barrier insulating film that prevents the inclusion of the metal oxide in the transistor 200A. For example, it is preferable that the insulator 254 has a lower hydrogen permeability than the insulator 224. Furthermore, as shown in FIGS. 41(B) and (C), the insulator 254 is made of a metal oxide 230. the side surface of the conductor 242c, the top and side surfaces of the conductor 242a, the top and side surfaces of the conductor 242b, and the metal oxide 23 230a, the side of the metal oxide 230b, and the region in contact with the top surface of the insulator 224. With this configuration, hydrogen contained in the insulator 280 is preferably 242a, conductor 242b, metal oxide 230a, metal oxide 230b, and insulator 22 4 from penetrating into the metal oxide 230 from the top or side surfaces thereof.

[0528] Additionally, the insulator 254 is resistant to the diffusion of oxygen (e.g., at least one of oxygen atoms, oxygen molecules, etc.). It is preferable that the insulator 2 has a function of suppressing the oxygen permeation (i.e., the oxygen is less likely to permeate). Preferably, 54 has a lower oxygen permeability than insulator 280 or insulator 224 .

[0529] The insulator 254 is preferably formed by sputtering. The insulator 224 is formed by sputtering in an atmosphere containing oxygen. Oxygen can be added to the area adjacent to the contact area with 254. Oxygen can be supplied to the metal oxide 230 through the insulator 224. 254 has the function of suppressing the upward diffusion of oxygen, so that oxygen is prevented from diffusing into the metal oxide 230 In addition, the insulator 222 can prevent the diffusion of the insulating material from the lower By having the function of suppressing the diffusion of oxygen to the metal oxide 230, oxygen is prevented from diffusing from the metal oxide 230 to the substrate side. In this way, the formation of the channel of the metal oxide 230 can be suppressed. This reduces oxygen vacancies in the metal oxide 230 and This can prevent the starter from becoming normally on.

[0530] The insulator 254 may be, for example, an oxide of one or both of aluminum and hafnium. It is preferable to form an insulator containing aluminum and / or hafnium oxide. Insulators containing aluminum oxide, hafnium oxide, or aluminum and hafnium It is preferable to use an oxide containing hafnium (hafnium aluminate) or the like.

[0531] The insulator 254 having a barrier property against hydrogen is used to separate the insulator 224, the insulator 250, and the By covering the metal oxide 230, the insulator 280 is insulated from the insulator 224 by the insulator 254, and the metal The oxide 230 and the insulator 250 separate the transistor 200A. Since impurities such as hydrogen can be prevented from entering from the outside, the power of the transistor 200A can be reduced. Therefore, the thermal characteristics and reliability can be improved.

[0532] The insulator 280 is formed by connecting the insulator 224, the metal oxide 230, and the conductor through the insulator 254. 242. For example, the insulator 280 may be silicon oxide or silicon oxynitride. , silicon oxide nitride, silicon oxide doped with fluorine, silicon oxide doped with carbon, carbon It is preferable to have silicon oxide to which hydrogen and nitrogen are added, or silicon oxide having vacancies. In particular, silicon oxide and silicon oxynitride are preferred because they are thermally stable. In addition, materials such as silicon oxide, silicon oxynitride, and silicon oxide with pores are subject to heating. This is preferable because it makes it easier to form a region containing more desorbed oxygen.

[0533] It is preferable that the concentration of impurities such as water or hydrogen in the insulator 280 is reduced. The top surface of the edge 280 may be flattened.

[0534] The insulator 274, like the insulator 214, prevents impurities such as water or hydrogen from being mixed into the insulator 280. It is preferable that the insulator 274 has a function as a barrier insulating film that prevents the insulator 274 from being damaged. For example, an insulator that can be used for the insulator 214, the insulator 254, etc. may be used. This can be done.

[0535] In addition, it is preferable to provide an insulator 281 that functions as an interlayer film on the insulator 274. The insulator 281, like the insulator 224, has a reduced concentration of impurities such as water or hydrogen in the film. It is preferable that

[0536] In addition, openings formed in the insulators 281, 274, 280, and 254 The conductor 240a and the conductor 240b are arranged on the are provided facing each other across the conductor 260. The height of the upper surface may be flush with the upper surface of the insulator 281 .

[0537] The insulators 281, 274, 280, and 254 are connected to the inner walls of the openings. An insulator 241a is provided, and the first conductor of the conductor 240a is formed in contact with the side surface of the insulator 241a. A conductor 242a is located at least partially on the bottom of the opening. The conductor 240a contacts the conductor 242a. Similarly, the insulator 281, the insulator 274, the insulator 280 and the insulator 254, an insulator 241b is provided in contact with the inner wall of the opening. The first conductor of the conductor 240b is formed in contact with the bottom of the opening. A conductor 242b is located in one portion, and the conductor 240b contacts the conductor 242b.

[0538] The conductor 240a and the conductor 240b are made of tungsten, copper, or aluminum as a main component. It is preferable to use a conductive material having a high insulating property. It may also have a layered structure.

[0539] When the conductor 240 has a laminated structure, the metal oxide 230a, the metal oxide 230b, Conductors in contact with the conductor 242, the insulator 254, the insulator 280, the insulator 274, and the insulator 281 The body is made of a conductor having the function of suppressing the diffusion of impurities such as water or hydrogen. For example, tantalum, tantalum nitride, titanium, titanium nitride, ruthenium, or It is preferable to use ruthenium oxide or the like. In addition, it is preferable to use ruthenium oxide or the like to suppress the diffusion of impurities such as water or hydrogen. The conductive material having the function of forming the conductive layer may be used in a single layer or a multilayer structure. As a result, the oxygen added to the insulator 280 is absorbed by the conductors 240a and 240b. In addition, impurities such as water or hydrogen can be prevented from being generated from the upper layer of the insulator 281. is prevented from being mixed into the metal oxide 230 through the conductor 240a and the conductor 240b. It is possible.

[0540] The insulators 241a and 241b can be used as the insulator 254, for example. The insulators 241a and 241b are in contact with the insulator 254. Therefore, impurities such as water or hydrogen from the insulator 280 and the like can be absorbed into the conductor 240a and the conductor It is possible to prevent the metal oxide 230 from being mixed with the conductive material 240b. The oxygen contained in the insulator 280 is prevented from being absorbed by the conductors 240a and 240b. It can be controlled.

[0541] Although not shown, the upper surface of the conductor 240a and the upper surface of the conductor 240b are in contact with each other and serve as wiring. Conductors that function as wiring may be arranged. Conductors that function as wiring may be made of tungsten, copper, or the like. It is preferable to use a conductive material containing aluminum as the main component. The body may be a laminated structure, for example, a laminate of titanium or titanium nitride and the above conductive material. The conductor may be formed so as to be embedded in an opening provided in the insulator. .

[0542] <Transistor configuration example 2> 42A, 42B, and 42C show a display device that can be used in one embodiment of the present invention. 1A and 1B are a top view and a cross-sectional view of a transistor 200B and the periphery of the transistor 200B. The transistor 200B is a modification of the transistor 200A.

[0543] FIG. 42A is a top view of the transistor 200B. 2(C) is a cross-sectional view of the transistor 200B. 1A) is a cross-sectional view of the portion indicated by the dashed line B1-B2 in FIG. 1A, showing the channel of the transistor 200B. Also, Figure 42(C) is a cross-sectional view in the longitudinal direction of the coil. 1 is a cross-sectional view of the area indicated by the line, and is also a cross-sectional view of the transistor 200B in the channel width direction. In the top view of FIG. 42(A), some elements are omitted for clarity. do.

[0544] In the transistor 200B, the conductor 242a and the conductor 242b are formed on the metal oxide 230c. , the insulator 250, and the conductor 260. The transistor 200B can be a transistor with a high on-state current. can be a transistor that is easy to control.

[0545] The conductor 260 functioning as the gate electrode is a conductor 260a and a conductor on the conductor 260a. The conductor 260a is a hydrogen atom, a hydrogen molecule, a water molecule, a copper atom, or the like. It is preferable to use a conductive material that has the function of suppressing the diffusion of impurities. For example, a conductive material having a function of suppressing the diffusion of at least one of oxygen atoms, oxygen molecules, etc. It is preferable to use a material.

[0546] The conductor 260a has a function of suppressing the diffusion of oxygen, and therefore the material of the conductor 260b In other words, by having the conductor 260a, the conductor 260 The oxidation of b is suppressed, and the decrease in electrical conductivity can be suppressed.

[0547] In addition, the upper surface and side surface of the conductor 260, the side surface of the insulator 250, and the side surface of the metal oxide 230c It is preferable to provide an insulator 254 so as to cover the surface. It is preferable to use an insulating material that has the function of suppressing the diffusion of impurities such as silicon and oxygen.

[0548] By providing the insulator 254, oxidation of the conductor 260 can be suppressed. By having the insulator 254, impurities such as water and hydrogen contained in the insulator 280 can be absorbed into the transistor 20. It is possible to suppress diffusion to 0B.

[0549] <Transistor configuration example 3> 43A, 43B, and 43C show a display device that can be used in one embodiment of the present invention. 1A and 1B are a top view and a cross-sectional view of a transistor 200C and the periphery of the transistor 200C. Transistor 200C is a modification of transistor 200A.

[0550] FIG. 43A is a top view of the transistor 200C. 3(C) is a cross-sectional view of the transistor 200C. 1A) is a cross-sectional view of the portion indicated by the dashed line C1-C2 in FIG. 1A, showing the channel of the transistor 200C. Also, Figure 43(C) is a cross-sectional view in the longitudinal direction of the coil. 1 is a cross-sectional view of the area indicated by the line, and is also a cross-sectional view of the transistor 200C in the channel width direction. In the top view of Figure 43(A), some elements are omitted for clarity. do.

[0551] The transistor 200C has an insulator 250 on the metal oxide 230c. The metal oxide 252 is provided thereon. The conductive material 260 is provided on the metal oxide 252. An insulator 270 is provided on the body 260. An insulator 271 is provided on the insulator 270.

[0552] The metal oxide 252 preferably has a function of suppressing oxygen diffusion. By providing a metal oxide 252 that suppresses the diffusion of oxygen between the conductor 260 and the conductive material, The diffusion of oxygen into the metal oxide 260 is suppressed. In other words, the amount of oxygen supplied to the metal oxide 230 is reduced. In addition, oxidation of the conductor 260 can be suppressed.

[0553] The metal oxide 252 may function as a part of the gate electrode. The oxide semiconductor that can be used as the metal oxide 230 is used as the metal oxide 252. In this case, the conductor 260 is formed by sputtering, and the metal oxide The electrical resistance of the oxide 252 can be reduced to make it a conductor. The electrode can be called a Conductor.

[0554] The metal oxide 252 may also function as part of the gate insulator. Therefore, the insulator 250 is preferably made of a material with high thermal stability, such as silicon oxide or silicon oxynitride. When using a metal oxide 252, a metal oxide that is a high-k material with a high dielectric constant is used. By using such a layered structure, the transistor 200C can be made heat-resistant. Therefore, the transistor can be made stable against the physical film and have a high relative dielectric constant. It is possible to reduce the gate potential applied during transistor operation while maintaining the thickness. In addition, it is possible to reduce the equivalent oxide thickness (EOT) of the insulator that functions as the gate insulator. .

[0555] In the transistor 200C, the metal oxide 252 is shown as a single layer, but may have a stacked structure of two or more layers. For example, a metal oxide that functions as part of the gate electrode and a gate insulator Alternatively, a metal oxide that functions as a part of the insulating layer may be laminated.

[0556] The transistor 200C includes a metal oxide 252, which acts as a gate electrode. When it acts as a pole, it does not weaken the influence of the electric field from the conductor 260. The metal oxide 252 can improve the on-state current of the gate insulating film 200C. When acting as a conductive material, the physical thickness of the insulator 250 and the metal oxide 252 The distance between the conductor 260 and the metal oxide 230 can be maintained. Therefore, the leakage current between the transistor 60 and the metal oxide 230 can be suppressed. The transistor 200C has a laminated structure of the insulator 250 and the metal oxide 252, and thus has a conductive The physical distance between the conductor 260 and the metal oxide 230 and the distance between the conductor 260 and the metal oxide 230 The electric field strength applied to 30 can be easily adjusted.

[0557] Specifically, the metal oxide 252 may be an oxide semiconductor that can be used for the metal oxide 230. Conductors with low resistance can be used. Alternatively, hafnium, aluminum, gallium Sm, yttrium, zirconium, tungsten, titanium, tantalum, nickel, gel A metal oxide containing one or more metals selected from the group consisting of ammonium, magnesium, etc. It can be used.

[0558] In particular, oxides are insulators containing oxides of either or both of aluminum and hafnium. Aluminum, hafnium oxide, oxides containing aluminum and hafnium (hafnium It is preferable to use hafnium aluminate, etc. In particular, hafnium oxide is preferable. It has higher heat resistance than aluminum. Therefore, it is less likely to crystallize during heat treatment in the subsequent process. It is preferable for this reason. However, the metal oxide 252 is not an essential component. The design should be appropriate depending on the requirements.

[0559] The insulator 270 has an insulating property that prevents impurities such as water or hydrogen from permeating, and oxygen from permeating. For example, aluminum oxide or hafnium oxide is preferably used. This prevents the conductor 260 from being oxidized by oxygen from above the insulator 270. Furthermore, impurities such as water or hydrogen can be prevented from entering from above the insulator 270. , and the conductor 260 and the insulator 250 are used to prevent the metal oxide 230 from being mixed therein. It is possible.

[0560] The insulator 271 functions as a hard mask. When processing 0, the side of the conductor 260 is approximately vertical, specifically, the side of the conductor 260 and the substrate The angle formed by the surfaces is between 75 degrees and 100 degrees, preferably between 80 degrees and 95 degrees. can be done.

[0561] The insulator 271 has a function of suppressing the permeation of impurities such as water or hydrogen, and oxygen. By using an insulating material, the insulating layer may also function as a barrier layer. The body 270 may not be provided.

[0562] The insulator 271 is used as a hard mask to form the insulator 270, the conductor 260, and the metal oxide 2 52, insulator 250, and metal oxide 230c are selectively removed to remove these The side surfaces of the metal oxide 230b can be made to be substantially flush with each other, and a part of the surface of the metal oxide 230b can be exposed. .

[0563] Also, transistor 200C has region 243a on a portion of the exposed metal oxide 230b surface. and region 243b. Either region 243a or region 243b functions as a source region. The other of the region 243a and the region 243b functions as a drain region.

[0564] The regions 243a and 243b may be formed by, for example, an ion implantation method, an ion doping method, or the like. Plasma immersion ion implantation or plasma treatment can be used to remove exposed metal oxide. This can be achieved by introducing impurity elements such as phosphorus or boron into the surface of 230b. In the embodiments, the term "impurity elements" refers to elements other than the main component elements.

[0565] In addition, after exposing a part of the surface of the metal oxide 230b, a metal film is formed, and then a heat treatment is performed. By performing the above, the elements contained in the metal film are diffused into the metal oxide 230b, and the region 2 43a and region 243b can also be formed.

[0566] The region of the metal oxide 230b into which the impurity element is introduced has a reduced electrical resistivity. The regions 243a and 243b may be referred to as "impurity regions" or "low resistance regions." .

[0567] By using the insulator 271 and / or the conductor 260 as a mask, the region 243a and the region The region 243b can be formed in a self-aligned manner. 243a and / or region 243b do not overlap with the conductor 260, reducing parasitic capacitance. In addition, the channel forming region and the source / drain region (region 243a or region 243 No offset region is formed between the regions 243a and 243b. By forming it in a self-aligned manner, the on-current is increased, the threshold voltage is reduced, It is possible to improve the operating frequency, etc.

[0568] The transistor 200C includes an insulator 271, an insulator 270, a conductor 260, a metal oxide 25 2, the insulator 250, and the insulator 272 on the side of the metal oxide 230c. 2 is preferably an insulator with a low relative dielectric constant. For example, silicon oxide, silicon oxynitride, etc. Silicon, silicon oxide nitride, silicon nitride, silicon oxide doped with fluorine, carbon doped silicon oxide doped with carbon and nitrogen, silicon oxide with vacancies, ...

Claims

1. The system includes a subject detection unit having an imaging device, a feature extraction unit, an estimation unit, an information generation unit, an information presentation unit having a display device, a receiver, and a transmitter, The receiver has a function of receiving information from an external device, the subject detection unit has a function of acquiring information on a part or all of a user's face, the feature extraction unit has a function of extracting facial features of the user from information on a part or all of the user's face acquired by the subject detection unit, the estimation unit has a function of estimating information about a fatigue level of the user from the facial features of the user extracted by the feature extraction unit, the information generation unit has a function of generating or determining information to be presented to the user based on information about the fatigue level of the user estimated by the estimation unit, the transmitter has a function of transmitting the information generated by the information generation unit, The information presentation unit is an electronic device having a function of presenting information to the user based on the information to be presented to the user determined by the information generation unit, and a function of displaying the information received by the receiver.

2. In claim 1, the display device has a function of emitting infrared light, The imaging device is an electronic device having a function of detecting infrared light.

3. In claim 1 or claim 2, the display device has a function as a light source, the imaging device has a function of detecting light emitted from the light source and reflected by a user; electronic equipment.

4. In claim 1, the imaging device has a light source; the light source has a function of emitting infrared light, The imaging device is an electronic device having a function of detecting infrared light.

5. In any one of claims 1 to 4, The electronic device, wherein the feature extraction unit extracts facial features of the user using a neural network.

6. In any one of claims 1 to 5, The electronic device wherein the estimation unit estimates fatigue level information related to the user using a neural network.

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