Plasma processing equipment

Abstract

To provide a technology that suppresses the shape abnormality of a recess that is formed in a silicon-containing film and facilitates etching the bottom of the recess.SOLUTION: The plasma processing device disclosed herein comprises: a chamber; a substrate support tool which is provided inside of the chamber; a gas supply unit which is constituted so as to supply a processing gas that includes a tungsten hexafluoride gas to the inside of the chamber; a plasma generation unit which is constituted so as to generate a plasma from the processing gas in the chamber; and a bias power source which is constituted so as to periodically apply, when generating the plasma and etching the silicon-containing film of the substrate on the substrate support tool, a DC voltage having a 5% to 40% duty cycle as an electric bias to the substrate support tool at a time interval that is the reciprocal of a 100 kHz to 1 MHz bias frequency.SELECTED DRAWING: Figure 1

Description

[Technical Field]

[0001] SUMMARY OF THE INVENTION Exemplary embodiments of the present disclosure relate to an etching method and a plasma processing apparatus. [Background technology]

[0002] Plasma etching is performed to form recesses in a silicon-containing film on a substrate. To prevent the recesses from becoming irregularly shaped, a plasma etching technique has been proposed in which the silicon-containing film is etched while a conductive layer is formed on the surface of the substrate. Patent Document 1 discloses such a technique. [Prior art documents] [Patent documents]

[0003] [Patent Document 1] Japanese Patent Application Publication No. 9-50984 Summary of the Invention [Problem to be solved by the invention]

[0004] The present disclosure provides a technique for suppressing shape abnormalities in recesses formed in a silicon-containing film and for promoting etching of the bottom of the recesses. [Means for solving the problem]

[0005] In one exemplary embodiment, a plasma processing apparatus is provided, comprising: a chamber, a substrate support disposed within the chamber, a gas supply unit configured to supply a process gas containing tungsten hexafluoride gas into the chamber, a plasma generation unit configured to generate plasma from the process gas within the chamber, and a bias power supply configured to periodically apply a DC voltage having a duty ratio of 5% to 40% as an electrical bias to the substrate support at a time interval that is the reciprocal of a bias frequency of 100 kHz to 1 MHz when the plasma is generated to etch a silicon-containing film on a substrate on the substrate support. [Effects of the Invention]

[0006] According to one exemplary embodiment, it is possible to suppress shape abnormalities in recesses formed in a silicon-containing film and to allow etching of the bottom of the recesses to proceed. [Brief explanation of the drawings]

[0007] [Figure 1] 1 is a flow diagram of an etching method according to an exemplary embodiment. [Figure 2] FIG. 2 is a partially enlarged cross-sectional view of an example substrate. [Figure 3] FIG. 10 is a partially enlarged cross-sectional view of another example of a substrate. [Figure 4] 2 is a partially enlarged cross-sectional view of an example substrate being processed by step STc of the etching method shown in FIG. 1. FIG. [Figure 5] 2 is a timing chart relating to step STc2 in the etching method shown in FIG. [Figure 6] 2 is a partially enlarged cross-sectional view of the substrate in an example state after the etching method shown in FIG. 1 is performed. FIG. [Figure 7] FIG. 10 is a partially enlarged cross-sectional view of another example of a substrate. [Figure 8] 4 is a flow diagram of an etching method according to another exemplary embodiment. [Figure 9] 1 is a diagram illustrating a schematic diagram of a plasma processing apparatus according to an exemplary embodiment; [Figure 10] FIG. 1 is a cross-sectional view schematically illustrating a portion of a sample substrate etched in an experiment. [Figure 11] FIG. 11(a) is a graph showing the atomic fractions of silicon and tungsten in region RS obtained by the experiment, and FIG. 11(b) is a graph showing the atomic fractions of silicon and tungsten in region RB obtained by the experiment. DETAILED DESCRIPTION OF THE INVENTION

[0008] Various exemplary embodiments are described below.

[0009] In one exemplary embodiment, an etching method is provided. The etching method includes step (a) of providing a substrate having a silicon-containing film including a silicon oxide film. The substrate is placed on a substrate support provided in a chamber. The etching method further includes step (b) of supplying a process gas into the chamber. The process gas includes tungsten hexafluoride gas, a gas containing carbon and fluorine, and an oxygen-containing gas. The etching method further includes step (c) of generating a plasma from the process gas to etch the silicon-containing film. Step (c) includes periodically applying a negative DC voltage to the substrate support.

[0010] In one exemplary embodiment, step (c) may include substituting tungsten atoms for some silicon atoms in the silicon-containing film at the bottom of a recess formed in the silicon-containing film by etching, and step (c) may further include etching the silicon-containing film in which some silicon atoms have been substituted with tungsten atoms.

[0011] In one exemplary embodiment, step (c) may include applying a negative DC voltage to an upper electrode provided above the substrate support when no negative DC voltage is applied to the substrate support. In this embodiment, when no negative DC voltage is applied to the substrate support, a relatively large amount of secondary electrons emitted from the upper electrode can be supplied to the substrate. Therefore, the charge on the bottom of the recess can be neutralized.

[0012] In one exemplary embodiment, when a negative DC voltage is applied to the substrate support in step (c), a negative DC voltage may not be applied to the upper electrode, or a negative DC voltage having an absolute value smaller than that of the negative DC voltage applied to the upper electrode when no negative DC voltage is applied to the substrate support may be applied to the upper electrode when a negative DC voltage is applied to the substrate support.

[0013] In one exemplary embodiment, the pressure in the chamber in step (c) may be set to less than 1.333 Pa.

[0014] In one exemplary embodiment, the ratio of the flow rate of the tungsten hexafluoride gas in the processing gas to the flow rate of the processing gas may be 5% by volume or less.

[0015] In one exemplary embodiment, the process gas may further include nitrogen trifluoride gas.

[0016] In one exemplary embodiment, the ratio of the flow rate of nitrogen trifluoride gas in the processing gas to the flow rate of the processing gas may be greater than the flow rate of tungsten hexafluoride gas in the processing gas.

[0017] In one exemplary embodiment, the silicon-containing film may include a silicon oxide film. The process gas may include a fluorocarbon gas as a gas containing carbon and fluorine. The silicon-containing film may further include a silicon nitride film. In step (c), a tungsten-containing film may be formed on a sidewall of the silicon nitride film by etching. The silicon-containing film may further include a polycrystalline silicon film.

[0018] In one exemplary embodiment, the silicon-containing film may include a silicon nitride film. The process gas may include a hydrofluorocarbon gas as the carbon- and fluorine-containing gas.

[0019] In one exemplary embodiment, the silicon-containing film may include a stacked film having a silicon oxide film and a silicon nitride film. Step (c) may include etching the silicon nitride film while a bias frequency is set to a first frequency, the bias frequency being the reciprocal of a time interval during which the negative DC voltage is applied to the substrate support. Step (c) may include etching the silicon oxide film while the bias frequency is set to a second frequency greater than the first frequency.

[0020] In one exemplary embodiment, the substrate may further include an underlying region or an etching stop layer. The etching method may further include stopping the supply of tungsten hexafluoride gas in the process gas during a period that includes the time when the underlying region or the etching stop layer is exposed. The etching method may further include etching the silicon-containing film with plasma generated from a gas other than the tungsten hexafluoride gas contained in the process gas.

[0021] An etching method according to another exemplary embodiment includes step (a) of providing a substrate having a silicon-containing film including a silicon oxide film. The substrate is placed on a substrate support provided in a chamber. The etching method further includes step (b) of supplying a process gas including tungsten hexafluoride gas, a gas containing carbon and fluorine, and an oxygen-containing gas into the chamber. The etching method further includes step (c) of generating a plasma from the process gas to etch the silicon-containing film. Step (c) includes replacing some silicon atoms in the silicon-containing film with tungsten atoms at the bottom of a recess formed in the silicon-containing film by etching. Step (c) includes electrically biasing the substrate to remove the silicon-containing film in which some silicon atoms have been replaced by tungsten atoms.

[0022] In yet another exemplary embodiment, a plasma processing apparatus is provided. The plasma processing apparatus includes a chamber, a substrate support, a gas supply, a plasma generating unit, and a DC power supply. The substrate support includes a lower electrode and is disposed within the chamber. The gas supply is configured to supply a process gas into the chamber, the process gas including tungsten hexafluoride gas, a carbon- and fluorine-containing gas, and an oxygen-containing gas. The plasma generating unit is configured to generate a plasma from the process gas within the chamber. The DC power supply is configured to periodically apply a negative DC voltage to the substrate support.

[0023] Various exemplary embodiments will be described in detail below with reference to the drawings, in which the same or equivalent parts are designated by the same reference numerals.

[0024] 1 is a flow diagram of an etching method according to one example embodiment. The etching method shown in FIG. 1 (hereinafter referred to as "Method MT") is performed to etch a silicon-containing film on a substrate to form a recess in the silicon-containing film.

[0025] FIG. 2 is a partially enlarged cross-sectional view of an example substrate. FIG. 3 is a partially enlarged cross-sectional view of another example substrate. The method MT can be applied to the substrate W shown in FIG. 2 or FIG. 3. As shown in FIGS. 2 and 3, the substrate W has a silicon-containing film SF. The substrate W may further have a mask MK and an underlayer region UR. The silicon-containing film SF is provided on the underlayer region UR. The mask MK is provided on the silicon-containing film SF. The mask MK is made of an organic material such as polycrystalline silicon or amorphous carbon. The mask MK has a pattern to be transferred to the silicon-containing film SF by etching. That is, the mask MK has one or more openings.

[0026] The silicon-containing film SF is formed of at least one material containing silicon. The silicon-containing film SF may include a silicon oxide film OX. The silicon-containing film SF may be formed of a single layer of silicon oxide film. The silicon-containing film SF may be formed of a multilayer film including one or more silicon oxide films OX and one or more silicon nitride films SN. As shown in FIG. 3, the silicon-containing film SF may include a stacked film having a silicon oxide film OX and a silicon nitride film SN. The silicon nitride film SN may be provided on the silicon oxide film OX. The silicon-containing film SF may be formed of a multilayer film including one or more silicon oxide films and one or more polycrystalline silicon films.

[0027] 1, the method MT begins with step STa, in which a substrate W is prepared. In step STa, the substrate W is placed on a substrate support provided in a chamber of a plasma processing apparatus.

[0028] In the subsequent step STb, a processing gas is supplied into the chamber of the plasma processing apparatus. The processing gas includes tungsten hexafluoride gas (WF6 gas), a gas containing carbon and fluorine, and an oxygen-containing gas. The processing gas may further include nitrogen trifluoride gas (NF3 gas). The ratio of the flow rate of the nitrogen trifluoride gas in the processing gas to the flow rate of the processing gas supplied into the chamber may be greater than the flow rate of the tungsten hexafluoride gas in the processing gas. The ratio of the flow rate of the WF6 gas to the flow rate of the processing gas supplied into the chamber may be 5% by volume or less.

[0029] When the silicon-containing film SF includes a silicon oxide film OX, the carbon- and fluorine-containing gas in the process gas may include a fluorocarbon gas. The fluorocarbon gas may include one or more of C4F6 gas, C4F8 gas, C3F8 gas, and CF4 gas. When the silicon-containing film SF includes a silicon nitride film SN, the carbon- and fluorine-containing gas in the process gas may include a hydrofluorocarbon gas. The hydrofluorocarbon gas may include one or more of CH3F gas, CH2F2 gas, and CHF3 gas. The oxygen-containing gas in the process gas may include one or more of O2 gas, CO gas, and CO2 gas.

[0030] Step STc is performed while a processing gas is being supplied into the chamber in step STb. Step STc includes steps STc1 and STc2. In step STc1, plasma is generated from the processing gas in the chamber. In step STc, the silicon-containing film SF is etched by chemical species from the plasma. FIG. 4 is a partially enlarged cross-sectional view of an example substrate being processed by step STc of the etching method shown in FIG. 1. As shown in FIG. 4, a recess RC is formed in the silicon-containing film SF by the etching in step STc. In step STc, some silicon atoms in the silicon-containing film SF at the bottom of the recess RC are replaced with tungsten atoms supplied from the plasma.

[0031] When the silicon-containing film SF includes a silicon nitride film SN, in step STc, a tungsten-containing film WF is formed on the sidewalls of the silicon nitride film SN that define the recess RC. In step STc, the tungsten-containing film WF can be formed on the surface of the mask MK.

[0032] Step STc2 is performed while the plasma generated in step STc1 is present in the chamber. In step STc2, the silicon-containing film SF, in which some silicon atoms have been replaced by tungsten atoms, is etched or removed. In step STc2, the substrate W is electrically biased. To this end, in step STc2, an electric bias EB is applied to the substrate support. The electric bias EB may be applied to a lower electrode in the substrate support.

[0033] In one embodiment, the electric bias EB is a voltage generated by waveform shaping a DC voltage generated by a DC power supply using a waveform generator. The voltage that is the electric bias EB may have a rectangular pulse waveform, a triangular pulse waveform, or any other waveform. The voltage that is the electric bias EB is periodically applied to the substrate support. The polarity of the voltage that is the electric bias EB may be negative or positive, as long as the potential of the substrate W is set to create a potential difference between the plasma and the substrate W and attract ions to the substrate W.

[0034] FIG. 5 is a timing chart related to step STc2 in the etching method shown in FIG. 1. In one embodiment, as shown in FIG. 5, in step STc2, a negative DC voltage is periodically applied to the substrate support at a period CY (time interval) as the electric bias EB. The period CY includes a period PA and a period PB. The negative DC voltage is applied to the substrate support during the period PA. During the period PB, the application of the negative DC voltage to the substrate support is stopped. The absolute value of the negative DC voltage applied to the substrate support during the period PA may be 1 kV or more and 20 kV or less. The proportion of the period PA in the period CY, i.e., the duty ratio of the negative DC voltage periodically applied to the substrate support in step STc, may be 5% or more and 40% or less. This duty ratio may be 10% or more and 30% or less. Furthermore, the frequency defining the period CY, i.e., the bias frequency, which is the reciprocal of the time interval during which the negative DC voltage is applied to the substrate support, can be 100 kHz or more and 1 MHz or less. The bias frequency may be 300 kHz or more and 800 kHz or less. The bias frequency may be 500 kHz or less. The time length of the period CY is the reciprocal of the bias frequency defining the period CY. By adjusting the level, duty ratio, and frequency within these ranges of the negative DC voltage applied to the substrate support in step STc, it becomes possible to supply ions with sufficient energy to the bottom of the recess RC and suppress the formation of a tungsten-containing film at the bottom of the recess RC.

[0035] Fig. 6 is a partially enlarged cross-sectional view of an example of a substrate after performing the etching method shown in Fig. 1. As shown in Fig. 6, in step STc, the silicon-containing film SF may be etched until the recess RC reaches the surface of the underlying region UR. When step STc is completed, the method MT ends.

[0036] In method MT, some silicon atoms in the silicon-containing film SF are substituted with tungsten at the bottom surface defining the recess RC. Because the atomic weight of tungsten is greater than that of silicon, the portions of the silicon-containing film SF where some silicon atoms have been substituted with tungsten become chemically unstable. Furthermore, these portions are more likely to electrically attract fluorine ions from the plasma. Furthermore, if the silicon-containing film SF contains a silicon oxide film OX, the bonding energy between tungsten and oxygen is lower than the bonding energy between silicon and oxygen, making these portions more susceptible to etching. Therefore, method MT achieves a high etching rate for the silicon-containing film SF. Furthermore, the high etching rate of the silicon-containing film SF shortens the time the sidewalls of the silicon-containing film SF are exposed to chemical species from the plasma. As a result, bowing of the silicon-containing film SF, e.g., the silicon oxide film OX, is suppressed.

[0037] In one embodiment, the plasma processing apparatus used in the method MT may be a capacitively coupled plasma processing apparatus. That is, the plasma processing apparatus may further include an upper electrode. The upper electrode is provided above the substrate support. In step STc, another electrical bias DCS may be applied to the upper electrode. Specifically, as shown in FIG. 5 , in step STc, a negative DC voltage is applied to the upper electrode as the electrical bias DCS during period PB within cycle CY. That is, when no negative DC voltage is applied to the substrate support in step STc, a negative DC voltage is applied to the upper electrode. In this embodiment, a relatively large number of secondary electrons emitted from the upper electrode can be supplied to the substrate W. Therefore, the charge at the bottom of the recess RC can be neutralized. Note that application of the negative DC voltage to the upper electrode may be stopped during period PA. Alternatively, the absolute value of the negative DC voltage applied to the upper electrode during period PA may be smaller than the absolute value of the negative DC voltage applied to the upper electrode during period PB.

[0038] In one embodiment, during the period in which step STc is performed, the pressure in the chamber may be set to a low pressure of less than 10 mTorr (1.333 Pa). In this case, excessive dissociation of a gas containing carbon and fluorine, such as a fluorocarbon gas, is suppressed. As a result, excessive deposition of carbon-containing substances on the substrate W is suppressed. In addition, bowing of the silicon oxide film OX caused by ions that collide with and recoil from the carbon-containing substances deposited on the sidewalls defining the recess RC is suppressed.

[0039] During the period when step STc is being performed, the temperature of the substrate support may be set to a temperature of 0°C or higher and 120°C or lower. If the temperature of the substrate support in step STc is lower than 0°C, the adhesion coefficient of deposits to the mask MK is high, which may cause clogging due to deposits on the mask MK and result in poor etching. Also, if the temperature of the substrate support in step STc is higher than 120°C, the adhesion coefficient of deposits to the mask MK is low, which may result in excessive deposits in the recess RC and result in poor etching.

[0040] Furthermore, as described above, when the processing gas further contains nitrogen trifluoride gas, the amount of carbon-containing material deposited on the upper part of the mask MK can be adjusted, and as a result, the reduction or blockage of the openings of the mask MK can be suppressed.

[0041] As described above, in one embodiment, the ratio of the flow rate of nitrogen trifluoride gas in the process gas to the flow rate of the process gas supplied into the chamber may be greater than the flow rate of tungsten hexafluoride gas in the process gas, which prevents excessive deposition of tungsten-containing materials on the substrate W.

[0042] As described above, in one embodiment, the ratio of the flow rate of the tungsten hexafluoride gas to the flow rate of the process gas supplied into the chamber may be 5% by volume or less, which prevents excessive deposition of tungsten-containing material on the bottom surface defining the recess RC.

[0043] In one embodiment, step STc may include etching the silicon nitride film SN with the bias frequency set to a first frequency and etching the silicon oxide film OX with the bias frequency set to a second frequency. The first frequency may be 200 kHz or more and 300 kHz or less. The second frequency is greater than the first frequency. When the bias frequency is set to the first frequency, radicals are the main chemical species contributing to the etching. On the other hand, when the bias frequency is set to the second frequency, ions are the main chemical species contributing to the etching. Therefore, in this case, the silicon nitride film SN can be etched by radicals from the plasma. Also, the silicon oxide film OX can be etched by ions from the plasma.

[0044] Reference is now made to FIG. 7 . FIG. 7 is a partially enlarged cross-sectional view of another example of a substrate. The method MT may be applied to the substrate W shown in FIG. 7 . The substrate W shown in FIG. 7 includes an underlayer region UR, a silicon-containing film SF, and a mask MK, similar to the substrate W shown in FIG. 2 or 3 . The mask MK has a plurality of openings. The substrate W shown in FIG. 7 further includes a plurality of etching stop layers ES. Each of the etching stop layers ES is provided in the silicon-containing film SF between a corresponding one of the openings in the mask MK and the underlayer region UR. The positions of the etching stop layers ES in the thickness direction of the silicon-containing film SF are different from one another. The etching stop layers ES are made of, for example, tungsten. When the method MT is applied to the substrate W shown in FIG. 7 , etching of the silicon-containing film SF in step STc may be stopped at the etching stop layers ES.

[0045] Reference is now made to FIG. 8, which is a flow chart of an etching method according to another exemplary embodiment. Like method MT, method MTB shown in FIG. 8 includes steps STa, STb, and STc. Method MTB further includes steps STd and STe. Steps STd and STe are performed after step STc.

[0046] Step STd is initiated before the recess RC formed by the etching in step STc reaches the underlying region UR or the etching stop layer ES. Step STd is performed during a period that includes the time when the underlying region UR or the etching stop layer ES is exposed. In step STd, the supply of tungsten hexafluoride gas, which is included in the process gas supplied into the chamber from step STb, is stopped. The other gases included in the process gas supplied into the chamber from step STb may continue to be supplied into the chamber after step STd.

[0047] Step STe is performed after step STd. In step STe, the supply of tungsten hexafluoride gas is stopped, and the other gases contained in the process gas continue to be supplied into the chamber. In step STe, plasma is generated in the chamber from gases other than tungsten hexafluoride gas contained in the process gas. In step STe, the silicon-containing film SF is etched by chemical species from the plasma. Note that in step STe, the plasma is generated in the same manner as in step STc. Also, in step STe, the electrical bias EB is periodically applied to the substrate support, similar to step STc. According to this method MTB, deposition of tungsten-containing materials on the underlying region UR or the etching stop layer ES is suppressed.

[0048] A plasma processing apparatus that can be used to perform method MT will be described below. Fig. 9 is a diagram schematically illustrating a plasma processing apparatus according to an exemplary embodiment. The plasma processing apparatus 1 shown in Fig. 9 can be used in methods MT and MTB. The plasma processing apparatus 1 is a capacitively coupled plasma processing apparatus.

[0049] The plasma processing apparatus 1 includes a chamber 10. The chamber 10 defines an internal space 10s therein. The central axis of the chamber 10 is an axis AX extending in the vertical direction. In one embodiment, the chamber 10 includes a chamber body 12. The chamber body 12 has a substantially cylindrical shape. The internal space 10s is defined within the chamber body 12. The chamber body 12 is made of, for example, aluminum. The chamber body 12 is electrically grounded. A corrosion-resistant film is provided on the inner wall surface of the chamber body 12. The corrosion-resistant film may be a film made of a ceramic such as aluminum oxide or yttrium oxide.

[0050] The chamber body 12 has a passage 12p in its sidewall. The substrate W passes through the passage 12p when being transferred between the internal space 10s and the outside of the chamber 10. The passage 12p can be opened and closed by a gate valve 12g. The gate valve 12g is provided along the sidewall of the chamber body 12.

[0051] The plasma processing apparatus 1 further includes a substrate support 16. The substrate support 16 is configured to support a substrate W in the chamber 10. The substrate W may have a substantially disk shape. The substrate support 16 may be supported by a support 15. The support 15 extends upward from the bottom of the chamber body 12. The support 15 has a substantially cylindrical shape. The support 15 is made of an insulating material such as quartz.

[0052] The substrate support 16 includes a base 18. The substrate support 16 may further include an electrostatic chuck 20. The substrate support 16 may further include an electrode plate 19. The electrode plate 19 is made of a conductive material such as aluminum. The electrode plate 19 has a substantially disc shape, and its central axis is axis AX. The base 18 is provided on the electrode plate 19. The base 18 is made of a conductive material such as aluminum. The base 18 has a substantially disc shape, and its central axis is axis AX. The base 18 is electrically connected to the electrode plate 19.

[0053] The base 18 provides a flow path 18f therein. The flow path 18f is a flow path for a heat exchange medium (e.g., a refrigerant). The flow path 18f receives the heat exchange medium from a supply device (e.g., a chiller unit) via a pipe 23a. This supply device is provided outside the chamber 10. The heat exchange medium supplied to the flow path 18f flows through the flow path 18f and is returned to the supply device via a pipe 23b. The heat exchange medium supply device constitutes a temperature adjustment mechanism of the plasma processing apparatus 1.

[0054] The electrostatic chuck 20 is provided on a base 18. The substrate W is placed on the upper surface of the electrostatic chuck 20. The electrostatic chuck 20 has a main body and a chuck electrode. The main body of the electrostatic chuck 20 is made of a dielectric material. The electrostatic chuck 20 and its main body each have a substantially disk shape, with a central axis line AX. The chuck electrode is a film made of a conductor and is provided within the main body of the electrostatic chuck 20. The chuck electrode is connected to a DC power supply via a switch. When a voltage from the DC power supply is applied to the chuck electrode, an electrostatic attractive force is generated between the electrostatic chuck 20 and the substrate W. The generated electrostatic attractive force attracts the substrate W to the electrostatic chuck 20 and the substrate W is held by the electrostatic chuck 20.

[0055] The substrate support 16 may further support an edge ring ER disposed thereon. The edge ring ER may be made of silicon, silicon carbide, or quartz. The substrate W is disposed on the electrostatic chuck 20 within a region surrounded by the edge ring ER.

[0056] The plasma processing apparatus 1 may further include a gas supply line 25. The gas supply line 25 supplies a heat transfer gas (e.g., He gas) from a gas supply mechanism to the gap between the upper surface of the electrostatic chuck 20 and the rear surface (lower surface) of the substrate W.

[0057] The plasma processing apparatus 1 may further include a cylindrical portion 28 and an insulating portion 29. The cylindrical portion 28 extends upward from the bottom of the chamber body 12. The cylindrical portion 28 extends along the outer periphery of the support 15. The cylindrical portion 28 is made of a conductive material and has a substantially cylindrical shape. The cylindrical portion 28 is electrically grounded. The insulating portion 29 is provided on the cylindrical portion 28. The insulating portion 29 is made of an insulating material. The insulating portion 29 is made of ceramic, such as quartz. The insulating portion 29 has a substantially cylindrical shape. The insulating portion 29 extends along the outer periphery of the electrode plate 19, the outer periphery of the base 18, and the outer periphery of the electrostatic chuck 20.

[0058] The plasma processing apparatus 1 further includes an upper electrode 30. The upper electrode 30 is provided above the substrate support 16. The upper electrode 30 is supported on the upper part of the chamber body 12 via a member 32. The member 32 is made of an insulating material. The upper electrode 30 and the member 32 close the upper opening of the chamber body 12.

[0059] The upper electrode 30 may include a top plate 34 and a support 36. The bottom surface of the top plate 34 is the bottom surface on the side of the internal space 10s and defines the internal space 10s. The top plate 34 may be formed from a low-resistance conductor or semiconductor with little Joule heat. In one embodiment, the top plate 34 is formed from silicon. The top plate 34 has a plurality of gas holes 34a. The plurality of gas holes 34a penetrate the top plate 34 in its thickness direction.

[0060] The support 36 detachably supports the top plate 34. The support 36 is made of a conductive material such as aluminum. The support 36 provides a gas diffusion chamber 36a therein. The support 36 also provides a plurality of gas holes 36b. The plurality of gas holes 36b extend downward from the gas diffusion chamber 36a. The plurality of gas holes 36b are respectively connected to the plurality of gas holes 34a. The support 36 also provides a gas inlet 36c. The gas inlet 36c is connected to the gas diffusion chamber 36a. A gas supply pipe 38 is connected to the gas inlet 36c.

[0061] A gas source group 40 is connected to the gas supply pipe 38 via a valve group 41, a flow rate controller group 42, and a valve group 43. The gas source group 40, the valve group 41, the flow rate controller group 42, and the valve group 43 constitute a gas supply unit GS. The gas source group 40 includes a plurality of gas sources. The gas sources of the gas source group 40 include a plurality of gas sources used in the method MT or the method MTB. Each of the valve group 41 and the valve group 43 includes a plurality of on-off valves. The flow rate controller group 42 includes a plurality of flow rate controllers. Each of the plurality of flow rate controllers of the flow rate controller group 42 is a mass flow controller or a pressure-controlled flow rate controller. Each of the plurality of gas sources of the gas source group 40 is connected to the gas supply pipe 38 via a corresponding on-off valve of the valve group 41, a corresponding flow rate controller of the flow rate controller group 42, and a corresponding on-off valve of the valve group 43.

[0062] The plasma processing apparatus 1 may further include a shield 46. The shield 46 is detachably provided along the inner wall surface of the chamber body 12. The shield 46 prevents by-products of the plasma processing from adhering to the chamber body 12. The shield 46 is configured by forming a corrosion-resistant film on the surface of a member made of, for example, aluminum. The corrosion-resistant film may be a film made of a ceramic such as yttrium oxide.

[0063] The plasma processing apparatus 1 may further include a baffle member 48. The baffle member 48 is provided between a member (e.g., the cylindrical portion 28) surrounding the substrate support 16 and the shield 46. The baffle member 48 is configured, for example, by forming a corrosion-resistant film on the surface of a member made of aluminum. The corrosion-resistant film may be a film made of a ceramic such as yttrium oxide. The baffle member 48 has a plurality of through-holes. An exhaust port is provided below the baffle member 48 and at the bottom of the chamber body 12. An exhaust device 50 is connected to the exhaust port via an exhaust pipe 52. The exhaust device 50 has a pressure adjustment valve and a vacuum pump such as a turbomolecular pump.

[0064] The plasma processing apparatus 1 further includes a high-frequency power supply 61 and a bias power supply 62. The high-frequency power supply 61 is configured to generate high-frequency power (hereinafter referred to as "high-frequency power HF"). The high-frequency power HF has a frequency suitable for generating plasma. The frequency of the high-frequency power HF is, for example, 27 MHz or more and 100 MHz or less. The high-frequency power supply 61 is connected to an electrode in the substrate support 16 via a matching device 61m. The matching device 61m has a circuit for matching the impedance on the load side of the high-frequency power supply 61 to the output impedance of the high-frequency power supply 61. In one embodiment, the high-frequency power supply 61 constitutes a plasma generating unit. The electrode in the substrate support 16 to which the high-frequency power supply 61 is connected may be the base 18. In this case, the base 18 constitutes a lower electrode. The electrode in the substrate support 16 to which the high-frequency power supply 61 is connected may be an electrode provided in the electrostatic chuck 20. The high-frequency power supply 61 may be connected to the upper electrode 30 via the matching device 61m.

[0065] The bias power supply 62 is configured to periodically apply an electric bias EB to the substrate support 16. As described above, the electric bias EB is a voltage generated by waveform shaping a DC voltage generated by a DC power supply using a waveform generator. The voltage that is the electric bias EB may have a rectangular pulse waveform, a triangular pulse waveform, or any other waveform. The polarity of the voltage that is the electric bias EB may be negative or positive as long as the potential of the substrate W is set so as to create a potential difference between the plasma and the substrate W and attract ions to the substrate W. The electrode in the substrate support 16 to which the electric bias EB is applied from the bias power supply 62 may be the base 18. In this case, the base 18 constitutes a lower electrode. The electrode in the substrate support 16 to which the electric bias EB is applied from the bias power supply 62 may be an electrode provided in the electrostatic chuck 20.

[0066] In one embodiment, as described above, the bias power supply 62 is configured to periodically apply a negative DC voltage as the electrical bias EB to the substrate support 16 in step STc2 of the method MT. The negative DC voltage from the bias power supply 62 is applied to the substrate support 16 during a period PA within the period CY, as described above. During a period PB within the period CY, application of the negative DC voltage from the bias power supply 62 to the substrate support 16 is stopped.

[0067] In one embodiment, the plasma processing apparatus 1 may further include a DC power supply 70. The DC power supply 70 is configured to apply the above-described electrical bias DCS to the upper electrode 30. That is, the DC power supply 70 is configured to periodically apply a negative DC voltage to the upper electrode 30 as the electrical bias DCS. As described above, the negative DC voltage from the DC power supply 70 is applied to the upper electrode 30 during the period PB within the cycle CY. During the period PA within the cycle CY, the application of the negative DC voltage from the DC power supply 70 to the upper electrode 30 may be stopped. Alternatively, the absolute value of the negative DC voltage applied to the upper electrode during the period PA may be smaller than the absolute value of the negative DC voltage applied to the upper electrode during the period PB.

[0068] The plasma processing apparatus 1 may further include a control unit 80. The control unit 80 is a computer including a processor, a storage device, an input device, a display device, etc., and controls each part of the plasma processing apparatus 1. Specifically, the control unit 80 executes a control program stored in the storage device and controls each part of the plasma processing apparatus 1 based on recipe data stored in the storage device. Under the control of the control unit 80, a process specified by the recipe data is executed in the plasma processing apparatus 1. The methods MT and MTB can be executed in the plasma processing apparatus 1 under the control of the control unit 80 to control each part of the plasma processing apparatus 1.

[0069] When the method MT or the method MTB is applied to a substrate W using the plasma processing apparatus 1, in step STa, the substrate W is placed on the substrate support 16. In the subsequent step STb, the control unit 80 controls the gas supply unit GS to supply the above-described processing gas into the chamber 10. In the subsequent step STc, the control unit 80 controls the exhaust unit 50 to set the pressure in the chamber 10 to a specified pressure. In addition, in step STc, the control unit 80 controls the plasma generation unit to generate plasma from the processing gas in the chamber 10. Specifically, the control unit 80 controls the high-frequency power supply 61 to supply high-frequency power HF. In addition, in step STc, the control unit 80 controls the bias power supply 62 to periodically apply an electric bias EB to the substrate support 16. In one embodiment, in step STc, the control unit 80 controls the DC power supply 70 to periodically apply a negative DC voltage to the upper electrode 30 as the above-described electric bias DCS.

[0070] When the method MTB is applied to the substrate W using the plasma processing apparatus 1, in step STd, the control unit 80 controls the gas supply unit GS to stop the supply of tungsten hexafluoride gas contained in the process gas supplied to the chamber from step STb. In step STe, the control unit 80 controls the plasma generation unit to generate plasma from a gas other than tungsten hexafluoride gas contained in the process gas in order to further etch the silicon-containing film SF. Specifically, the control unit 80 controls the high-frequency power supply 61 to supply high-frequency power HF. Also, in step STe, the control unit 80 controls the bias power supply 62 to periodically apply an electric bias EB to the substrate support 16.

[0071] Although various exemplary embodiments have been described above, the present invention is not limited to the above-described exemplary embodiments, and various additions, omissions, substitutions, and modifications may be made. Furthermore, elements in different embodiments may be combined to form other embodiments.

[0072] For example, the plasma processing apparatus used in the method MT may be of a type other than the capacitively coupled type, such as an inductively coupled plasma processing apparatus, an electron cyclotron resonance (ECR) plasma processing apparatus, or a plasma processing apparatus that generates plasma using surface waves such as microwaves.

[0073] An experiment conducted to evaluate Method MT will be described below. In the experiment, a sample substrate having a structure similar to that of the substrate W shown in FIG. 3 was prepared. Method MT was applied to the sample substrate using a plasma processing apparatus 1. In the experiment, the silicon-containing film SF was etched to a depth between the upper and lower surfaces of the silicon oxide film OX. The processing gas used in the experiment was a mixture of C4F8 gas, C4F6 gas, O2 gas, and WF6 gas. FIG. 10 is a cross-sectional view schematically showing a portion of the sample substrate etched in the experiment. In the experiment, the concentrations, i.e., atomic fractions, of silicon (Si) and tungsten (W) in regions RB and RS shown in FIG. 10 were measured by TEM / EDX. Region RB includes the bottom surface of the silicon oxide film OX that defines the recess RC. Region RS includes the side surface of the silicon oxide film OX that defines the recess RC.

[0074] FIG. 11(a) is a graph showing the atomic fractions of silicon (Si) and tungsten (W) in region RS obtained by the experiment. FIG. 11(b) is a graph showing the atomic fractions of silicon (Si) and tungsten (W) in region RB obtained by the experiment. In FIG. 11(a), the horizontal axis indicates the horizontal position of region RS, and in FIG. 11(b), the horizontal axis indicates the horizontal position of region RB. As shown in FIG. 11(a), no large peak in the tungsten concentration was detected in region RS. On the other hand, as shown in FIG. 11(b), a large peak in the tungsten concentration was detected in region RB at a location including the bottom surface defining the recess RC. Therefore, it was confirmed that, according to method MT, some silicon atoms were replaced with tungsten atoms at a location including the bottom surface defining the recess RC.

[0075] The present disclosure includes embodiments as set forth in the appendix below. [Appendix 1] (a) preparing a substrate having a silicon-containing film including a silicon oxide film, the substrate being placed on a substrate support provided in a chamber; (b) supplying a process gas into the chamber, the process gas including tungsten hexafluoride gas, a carbon- and fluorine-containing gas, and an oxygen-containing gas; (c) generating a plasma from the process gas to etch the silicon-containing film; Including, (c) includes periodically applying a negative DC voltage to the substrate support; Etching method. [Appendix 2] The above (c) is replacing some silicon atoms in the silicon-containing film with tungsten atoms at a bottom surface of a recess formed in the silicon-containing film by the etching; Etching the silicon-containing film in which some of the silicon atoms have been replaced with the tungsten atoms; 2. The etching method of claim 1, comprising: [Appendix 3] 3. The etching method according to claim 1, wherein (c) includes applying a negative DC voltage to an upper electrode provided above the substrate support when the negative DC voltage is not applied to the substrate support. [Appendix 4] 4. The etching method according to claim 3, wherein in (c), when the negative DC voltage is applied to the substrate support, the negative DC voltage is not applied to the upper electrode, or a negative DC voltage having an absolute value smaller than the absolute value of the negative DC voltage applied to the upper electrode when the negative DC voltage is not applied to the substrate support is applied to the upper electrode. [Appendix 5] 5. The etching method according to claim 1, wherein the pressure inside the chamber in (c) is set to less than 1.333 Pa. [Appendix 6] 6. The etching method according to claim 1, wherein a ratio of the flow rate of the tungsten hexafluoride gas in the processing gas to a flow rate of the processing gas is 5% by volume or less. [Appendix 7] 7. The etching method according to claim 1, wherein the processing gas further contains nitrogen trifluoride gas. [Appendix 8] 8. The etching method according to claim 7, wherein a ratio of a flow rate of the nitrogen trifluoride gas in the processing gas to a flow rate of the processing gas is higher than a flow rate of the tungsten hexafluoride gas in the processing gas. [Appendix 9] 9. The etching method according to claim 1, wherein the processing gas contains a fluorocarbon gas as the gas containing carbon and fluorine. [Appendix 10] 10. The etching method of claim 9, wherein the silicon-containing film further comprises a silicon nitride film. [Appendix 11] 10. The etching method of claim 9, wherein the silicon-containing film further comprises a polycrystalline silicon film. [Appendix 12] the silicon-containing film further comprises a silicon nitride film; The processing gas contains a hydrofluorocarbon gas as the gas containing carbon and fluorine. An etching method according to any one of appendices 1 to 8. [Appendix 13] 11. The etching method according to claim 10, wherein in (c), a tungsten-containing film is formed on a sidewall of the silicon nitride film formed by the etching. [Appendix 14] the silicon-containing film includes a stacked film having the silicon oxide film and a silicon nitride film, The above (c) is Etching the silicon nitride film while a bias frequency, which is the reciprocal of a time interval during which the negative DC voltage is applied to the substrate support, is set to a first frequency; Etching the silicon oxide film in a state where the bias frequency is set to a second frequency higher than the first frequency; 9. The etching method according to any one of claims 1 to 8, comprising: [Appendix 15] 15. The etching method according to any one of claims 1 to 14, wherein in (c), the temperature of the substrate support is set to a temperature of 0°C or higher and 120°C or lower. [Appendix 16] 16. The etching method according to any one of claims 1 to 15, wherein the absolute value of the negative DC voltage applied to the substrate support in (c) is 1 kV or more and 20 kV or less. [Appendix 17] the negative DC voltage periodically applied to the substrate support in (c) has a duty ratio of 5% or more and 40% or less; 17. The etching method according to any one of claims 1 to 16, wherein in (c), a bias frequency, which is the reciprocal of the time interval during which the negative DC voltage is applied to the substrate support, is 100 kHz or more and 1 MHz or less. [Appendix 18] The substrate further comprises an underlying region or an etch stop layer, and the etching method comprises: (d) stopping the supply of tungsten hexafluoride gas in the processing gas during a period including when the underlying region or the etching stop layer is exposed; (e) etching the silicon-containing film with plasma generated from a gas other than the tungsten hexafluoride gas contained in the processing gas; 18. The etching method according to any one of claims 1 to 17, further comprising: [Appendix 19] (a) preparing a substrate having a silicon-containing film including a silicon oxide film, the substrate being placed on a substrate support provided in a chamber; (b) supplying a process gas into the chamber, the process gas including tungsten hexafluoride gas, a carbon- and fluorine-containing gas, and an oxygen-containing gas; (c) generating a plasma from the process gas to etch the silicon-containing film; Including, The above (c) is replacing some silicon atoms in the silicon-containing film with tungsten atoms at a bottom surface of a recess formed in the silicon-containing film by the etching; electrically biasing the substrate to remove the silicon-containing film in which some of the silicon atoms have been replaced by tungsten atoms; Including, Etching method. [Appendix 20] a chamber; a substrate support disposed within the chamber; a gas supply configured to supply a process gas into the chamber, the process gas including tungsten hexafluoride gas, a carbon- and fluorine-containing gas, and an oxygen-containing gas; a plasma generating unit configured to generate a plasma from the process gas within the chamber; a bias power supply configured to periodically apply a negative DC voltage to the substrate support; A plasma processing apparatus comprising:

[0076] From the foregoing, it will be understood that various embodiments of the present disclosure have been described herein for purposes of illustration, and that various modifications may be made without departing from the scope and spirit of the present disclosure. Accordingly, the various embodiments disclosed herein are not intended to be limiting, with the true scope and spirit being indicated by the appended claims. [Explanation of symbols]

[0077] 1...plasma processing apparatus, 10...chamber, 16...substrate support, 18...base, 61...high frequency power supply, 62...bias power supply, GS...gas supply unit, W...substrate, SF...silicon-containing film.

Claims

1. a chamber; a substrate support provided in the chamber, the substrate support including a base having a flow path through which a heat exchange medium supplied from a chiller unit circulates, and an electrostatic chuck on the base; a gas supply configured to supply a process gas into the chamber, the process gas including tungsten hexafluoride gas and a gas containing carbon and fluorine; a plasma generating unit configured to generate a plasma from the process gas within the chamber; a bias power supply configured to periodically apply a DC voltage as an electric bias to the substrate support at a time interval that is the reciprocal of a bias frequency of 100 kHz or more and 1 MHz or less; A control unit; Equipped with The control unit (a) controlling the chiller unit to prepare a substrate having a silicon-containing film and a mask on the silicon-containing film on the substrate support, the temperature of which is controlled to be equal to or higher than 0° C. and equal to or lower than 120° C.; (b) controlling the gas supply unit to supply the process gas into the chamber; (c) controlling the plasma generating unit and the bias power supply to generate plasma from the processing gas, thereby etching the silicon-containing film; configured to perform a process including Plasma processing equipment.

2. The plasma processing apparatus described in claim 1, wherein the control unit is configured to control the bias power supply to perform the process (c) while setting the duty ratio of the electrical bias to 40% or less.

3. The plasma processing apparatus described in Claim 2, wherein the control unit is configured to control the bias power supply to perform the process (c) with the duty ratio of the electrical bias set to 5% or more.

4. A plasma processing apparatus as described in any one of claims 1 to 3, wherein the bias power supply is configured to periodically supply a negative DC voltage to the substrate support as the electrical bias.

5. A plasma processing apparatus as described in claim 4, wherein the absolute value of the negative DC voltage is 1 kV or more and 20 kV or less.

6. A plasma processing apparatus described in any one of claims 1 to 5, wherein the control unit controls the gas supply unit to set the ratio of the flow rate of the tungsten hexafluoride gas to the flow rate of the processing gas to 5 volume % or less.

7. A plasma processing apparatus according to claim 1, wherein the processing gas contains a fluorocarbon gas or a hydrofluorocarbon gas as the gas containing carbon and fluorine.

8. A plasma processing apparatus according to claim 1, wherein the processing gas further contains an oxygen-containing gas.

9. The plasma processing apparatus according to claim 8, wherein the oxygen-containing gas is at least one gas selected from the group consisting of O 2 gas, CO gas, and CO 2 gas.

10. A plasma processing apparatus according to claim 1, wherein the processing gas further contains nitrogen trifluoride gas.

11. Further comprising an exhaust device connected to an exhaust port of the chamber, The control unit is configured to control the exhaust device to perform the process (c) in a state where the pressure in the chamber is set to less than 1.333 Pa. The plasma processing apparatus according to claim 1 .

12. A chamber having a gas inlet and an exhaust port; a substrate support provided in the chamber, the substrate support including a base having a flow path through which a heat exchange medium circulates, and an electrostatic chuck on the base; a gas supply unit connected to the gas inlet and configured to supply a process gas containing tungsten hexafluoride gas and a gas containing carbon and fluorine into the chamber; a plasma generating unit configured to generate a plasma from the process gas within the chamber; a bias power supply configured to periodically apply a DC voltage as an electric bias to the substrate support at a time interval that is the reciprocal of a bias frequency of 100 kHz or more and 1 MHz or less when generating the plasma to etch a silicon-containing film on a substrate on the substrate support; A plasma processing apparatus comprising:

13. A plasma processing apparatus as described in claim 12, wherein the bias power supply is configured to supply a DC voltage having a duty ratio of 40% or less to the substrate support as the electrical bias.

14. A plasma processing apparatus as described in claim 13, wherein the bias power supply is configured to supply a DC voltage having a duty ratio of 5% or more to the substrate support as the electrical bias.

15. A gas supply system comprising: a chamber having a gas inlet and an exhaust port; a substrate support provided in the chamber, the substrate support including a base having a flow path through which a heat exchange medium circulates, and an electrostatic chuck on the base; a gas supply unit connected to the gas inlet and configured to supply a process gas containing tungsten hexafluoride gas into the chamber; a plasma generating unit configured to generate a plasma from the process gas within the chamber; a bias power supply configured to periodically apply a DC voltage as an electric bias to the substrate support at a time interval that is the reciprocal of a bias frequency of 100 kHz or more and 1 MHz or less when generating the plasma to etch a silicon-containing film on a substrate on the substrate support; A plasma processing apparatus comprising:

16. A plasma processing apparatus as described in claim 15, wherein the bias power supply is configured to supply a DC voltage having a duty ratio of 40% or less to the substrate support as the electrical bias.

17. A plasma processing apparatus as described in claim 16, wherein the bias power supply is configured to supply a DC voltage having a duty ratio of 5% or more to the substrate support as the electrical bias.

18. (a) providing a substrate having a silicon-containing film and a mask on the silicon-containing film on a substrate support in a chamber; (b) supplying a process gas into the chamber, the process gas including tungsten hexafluoride gas and a gas containing carbon and fluorine; (c) etching the silicon-containing film by generating a plasma from the process gas; Including, (c) includes periodically applying a DC voltage to the substrate support; In (c), a bias frequency, which is the reciprocal of the time interval during which the DC voltage is applied to the substrate support, is 100 kHz or more and 1 MHz or less. Etching method.

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