System and method for controlling electrostatic clamping of multiple platens on a rotating disk - Patent Application 20070122997

Abstract

A system and method for controlling electrostatic clamping of multiple platens on a rotating disk is disclosed. The system includes a semiconductor processing system, such as a high energy implantation system. The semiconductor processing system generates a spot ion beam. The spot ion beam is directed to multiple workpieces disposed on the rotating disk. The rotating disk includes a rotating central hub having multiple platens. The multiple platens may extend outwardly from the central hub, and the workpieces are electrostatically clamped to the platens. The central hub provides an electrostatic clamping voltage to each of the multiple platens. Additionally, the multiple platens may also rotate about an axis orthogonal to the axis of rotation of the central hub. The central hub controls the rotation of each of the platens. Power connections and communications are provided to the central hub via a spindle assembly.

Description

[Technical Field]

[0001] This application claims priority to U.S. Patent Application No. 17 / 543,150, filed December 6, 2021, the disclosure of which is incorporated herein by reference in its entirety.

[0002] SUMMARY OF THE INVENTION Embodiments of the present disclosure are directed to systems and methods for controlling electrostatic clamping of multiple platens on a rotating disk. [Background technology]

[0003] High-energy implantation systems are used to create semiconductor devices with deep implant regions. One particular type of device is called an insulated gate bipolar transistor (IGBT). IGBTs combine the concepts of bipolar transistors and MOSFETs to create an improved power device. The emitter and gate are located on one side of the device, and the collector is located on the second, opposite side of the device. The emitter connects to a heavily p-doped region located directly below the emitter. On either side of the heavily p-doped region are heavily n-doped regions, each of which connects to a gate. Below the heavily p-doped region is a lightly p-doped region. On the opposite side of the device is a second heavily p-doped region, which connects to the collector. Finally, between the second heavily p-doped region and the lightly p-doped region is a lightly n-doped drift layer.

[0004] In conventional IGBT devices, the thickness of the lightly n-doped drift layer is determined by the need to sustain the electric field. As the power rating of these devices increases, the overall thickness of the device also increases.

[0005] High-energy implants can be used to fabricate these devices. However, one drawback of this approach can be angular spread. Traditionally, these implantation systems generate a spot beam. The spot beam is then electrostatically scanned to generate a ribbon ion beam that strikes the workpiece. However, the non-uniformity of the angular spread can be exacerbated by the electrostatic scanner.

[0006] Therefore, it would be beneficial to have a semiconductor processing system that can perform high energy implants without the drawbacks of current technology, and in particular, a system that performs high energy implants on batches of electrostatically clamped workpieces. Summary of the Invention

[0007] A system and method for controlling electrostatic clamping of multiple platens on a rotating disk are disclosed. The system includes a semiconductor processing system, such as a high-energy implantation system. The semiconductor processing system generates a spot ion beam. The spot ion beam is directed toward multiple workpieces disposed on the rotating disk. The rotating disk includes a rotating central hub having multiple platens. The multiple platens may extend outward from the central hub, and the workpieces are electrostatically clamped to the platens. The central hub provides an electrostatic clamping voltage to each of the multiple platens. Additionally, the multiple platens may also rotate about an axis orthogonal to the axis of rotation of the central hub. The central hub also controls the rotation of each of the platens. Power connections and communications are provided to the central hub via a spindle assembly.

[0008] According to one embodiment, a rotating disk for processing multiple workpieces is disclosed. The rotating disk includes a central hub adapted to rotate, multiple platens attached to the central hub, each platen including multiple electrodes and configured to electrostatically clamp a respective workpiece, an electrode power system disposed within the central hub for receiving power signals and generating electrode signals for powering multiple electrodes disposed within each of the multiple platens to provide electrostatic clamping, and a spindle assembly connecting the central hub to the structure, the power signals being passed to the electrode power system via the spindle assembly. In some embodiments, the power signals are less than 500 V. In particular embodiments, the power signals are 24 V. In some embodiments, signals generated by the electrode power system for powering the multiple electrodes have an amplitude of 200 V or greater. In some embodiments, the amplitude is between 200 and 4000 V. In some embodiments, the electrode power system includes an electrode power supply. The electrode power supply generates N*P electrode signals, where N is the number of electrodes disposed within each platen and P is the number of platens. In some embodiments, the electrode power system includes multiple electrode power supplies. In that case, the multiple electrode power supplies generate N*P electrode signals, where N is the number of electrodes disposed in each platen and P is the number of platens. In particular embodiments, the multiple electrode power supplies include P electrode power supplies. In particular embodiments, the electrode power system generates N signals, where N is the number of electrodes. Each of the N signals is branched and distributed to a respective electrode in each platen. In that case, each branch includes a current sensor. There are thereby N*P current sensors, where P is the number of platens.

[0009] According to another embodiment, an ion implantation system is disclosed that includes an ion source, an accelerator for accelerating ions from the ion source, and the rotating disk described above.

[0010] According to another embodiment, a rotating disk for processing multiple workpieces is disclosed. The rotating disk includes a central hub adapted to rotate, multiple platens attached to the central hub, each platen including multiple electrodes and configured to electrostatically clamp a respective workpiece, and a spindle assembly connecting the central hub to the structure, wherein communication signals are passed to a hub controller via the spindle assembly. In some embodiments, the rotating disk includes a fluid gas conduit passing through the spindle assembly and a gas valve disposed within the central hub, and the hub controller controls the gas valve to regulate the flow of backside gas to the multiple platens. In some embodiments, the rotating disk includes an inlet coolant conduit and an outlet coolant conduit passing through the spindle assembly. In some embodiments, the rotating disk includes a coolant valve disposed within the central hub, where the hub controller controls the temperature of the multiple platens by controlling the coolant valve. In some embodiments, the rotating disk includes a thermal sensor disposed within the platen, where the hub controller controls the temperature of the platen based on information from the thermal sensor. In some embodiments, the rotating disk includes a thermal sensor disposed within the platen. In this case, the hub controller passes temperature information regarding the plurality of platens using communication signals, and the temperature of the coolant is controlled based on the temperature information. In some embodiments, the rotating disk includes spokes extending radially from a central hub, where one of the plurality of platens is located at a distal end of each spoke. In this case, the spokes are configured to rotate about an axis extending radially from the central hub. The rotating disk includes multiple rotation motors, where each rotation motor is in communication with a respective spoke. In this case, the hub controller controls the rotation of each spoke.

[0011] According to another embodiment, an ion implantation system is disclosed that includes an ion source, an accelerator for accelerating ions from the ion source, and the rotating disk described above.

[0012] For a better understanding of the present disclosure, reference is made to the accompanying drawings, which are incorporated herein by reference. [Brief explanation of the drawings]

[0013] [Figure 1A] 1 illustrates semiconductor processing equipment that may be utilized in accordance with one embodiment. [Figure 1B] 1 illustrates a semiconductor processing apparatus that may be utilized in accordance with a second embodiment. [Figure 2A] 1 illustrates a rotating disk according to one embodiment. [Figure 2B] 2B shows a side view of the rotating disk of FIG. 2A. [Figure 2C] 2B shows the rotating disk of FIG. 2A with the platen rotated at an angle. [Figure 3] FIG. 1 shows a block diagram of the electrical connections within the central hub. [Figure 4] FIG. 1 shows a block diagram of the fluid connections within the central hub. DETAILED DESCRIPTION OF THE INVENTION

[0014] This disclosure describes the use of a rotating disk in combination with a semiconductor processing system to implant ions having high energy and low angular spread. There are a variety of semiconductor processing systems that can be used with a rotating disk.

[0015] As shown in FIG. 1A, the semiconductor processing system includes an ion source 100 that is used to generate an ion beam. In one embodiment, a positive ion beam 101 may be generated in a conventional manner, such as using a Bernas or indirectly heated cathode (IHC) ion source. Of course, other types of ion sources may also be employed. A feed gas is supplied to the ion source 100, which is then energized to generate ions. In certain embodiments, the feed gas may be hydrogen, boron, phosphorus, arsenic, helium, or other suitable species. These ions are then extracted from the ion source 100 using extraction optics.

[0016] The positive ion beam 101 exiting the ion source 100 may be coupled to an Mg charge exchange cell 110. The Mg charge exchange cell 110 converts the positive ion beam 101 into a negative ion beam 111. Of course, other mechanisms for generating a negative ion beam are known in the art. The mechanism used to generate the negative ion beam is not limited by this disclosure.

[0017] The negative ion beam 111 may be directed to a mass analyzer 120, which may allow only certain ion species to pass through. The negative ions exiting the mass analyzer 120 are directed to a tandem accelerator 130.

[0018] The tandem accelerator 130 has two paths. The two paths are separated by a stripper tube 133. The input path 131 includes multiple input electrodes. These input electrodes may be any suitable conductive material, such as titanium or other metal. The outermost input electrode may be grounded. Each subsequent input electrode may be biased with an increasingly positive voltage as it approaches the stripper tube 133.

[0019] Input path 131 leads to stripper tube 133. Stripper tube 133 is positively biased with respect to the outermost input electrode. Stripper tube 133 includes an injection conduit through which a stripper gas is injected. The stripper gas may include neutral molecules. These neutral molecules may be any suitable species, such as, but not limited to, argon or nitrogen. Stripper tube 133 has an inlet located on the same side as input path 131. The outlet of stripper tube 133 leads to output path 132.

[0020] In other words, the stripper tube 133 is positively biased so as to attract the negative ion beam 111 through the input path 131. The stripper tube 133 removes electrons from the incoming ions, converting them from negative ions to positive ions.

[0021] The stripper tube 133 is more positive than the electrodes in the output path 132. Each subsequent output electrode may have a less positive bias as it moves further away from the stripper tube 133. For example, the outermost output electrode may be grounded. Thus, positive ions in the stripper tube 133 are accelerated through the output path 132.

[0022] In this manner, ions are accelerated twice. First, negative ions are accelerated through input path 131 into stripper tube 133. This acceleration is based on the difference between the voltage of the outermost input electrode and the voltage of stripper tube 133. Next, positive ions are accelerated through output path 132. This acceleration is based on the difference between the voltage of stripper tube 133 and the voltage of the outermost output electrode in output path 132.

[0023] An accelerator power supply 134 can be used to supply a voltage to the stripper tube 133, as well as to the electrodes in the input path 131 and the output path 132. The accelerator power supply 134 can supply a voltage up to 2.5 MV, although other voltages (higher or lower) are possible. Thus, to modify the implant energy, the voltage applied by the accelerator power supply 134 is varied.

[0024] After exiting the tandem accelerator 130, the positive ion beam 135 may enter a filter magnet 140. The filter magnet 140 may allow only ions of a particular charge to pass through. In other embodiments, the filter magnet 140 may not be employed.

[0025] The output of the filter magnet, which may be a spot ion beam 155, is then directed towards the rotating disk 300. A workpiece 10 may be placed on each of a number of platens disposed on the rotating disk 300. In certain embodiments, a corrective magnet may be positioned between the filter magnet 140 and the rotating disk 300.

[0026] The semiconductor processing equipment further includes a controller 180. The controller 180 may include a processing unit such as a microcontroller, a personal computer, a dedicated controller, or another suitable processing unit. The controller 180 may also include a non-transitory computer-readable storage element such as semiconductor memory, magnetic memory, or another suitable memory. This non-transitory storage element may include instructions and other data that enable the controller 180 to perform the functions described herein.

[0027] The controller 180 may be in communication with the accelerator power supply 134 to control the implant energy. Additionally, as described in more detail below, the controller 180 may be in communication with the rotating disk 300. The controller 180 may also be in communication with other components.

[0028] A second embodiment is shown in Figure 1B, where elements common to Figure 1A are given the same reference numerals.

[0029] As described above, the semiconductor processing system includes an ion source 100 used to generate an ion beam. The ion source 100 has an aperture through which ions can be extracted from the ion source 100. These ions can be extracted from the ion source 100 by applying a negative voltage to extraction optics 103 located outside the ion source 100 in proximity to the extraction aperture. The ions can then enter a mass analyzer 120. The mass analyzer 120 can be a magnet that can pass ions with a specific mass-to-charge ratio. This mass analyzer 120 is used to isolate only the desired ions. The desired ions then enter a linear accelerator 200.

[0030] The desired ions then enter the buncher 210, which generates a group or bunch of ions that move together. The buncher 210 may include multiple drift tubes. In that case, at least one of the drift tubes may be supplied with an AC voltage. One or more of the other drift tubes may be grounded. The drift tube supplied with the AC voltage may function to accelerate the ion beam and manipulate it into discrete bunches.

[0031] The linear accelerator 200 includes one or more cavities 201. Each cavity 201 includes a resonator coil 202 that can be energized by an electromagnetic field generated by an excitation coil 205. The excitation coils 205 are disposed within the cavity 201 along with their respective resonator coils 202. The excitation coils 205 are energized by an excitation voltage, which can be an RF signal. The excitation voltage can be supplied by a respective RF generator 204. In other words, the excitation voltage applied to each excitation coil 205 can be independent of the excitation voltage supplied to any other excitation coil 205. Each excitation voltage is preferably modulated at the resonant frequency of its respective cavity 201.

[0032] When an excitation voltage is applied to the excitation coil 205, a voltage is induced in the resonator coil 202. As a result, the resonator coil 202 in each cavity 201 is driven with a sinusoidal voltage. Each resonator coil 202 may be in electrical communication with a respective accelerator electrode 203. Ions pass through an aperture in each accelerator electrode 203.

[0033] The entry of a flux into a particular accelerator electrode 203 is timed as follows: the potential of the accelerator electrode 203 becomes negative as the flux approaches, but switches to positive as the flux passes through the accelerator electrode 203. In this manner, the flux is accelerated as it enters the accelerator electrode 203 and repelled as it exits, resulting in an acceleration of the flux. This process is repeated for each accelerator electrode 203 within the linear accelerator 200. Each accelerator electrode 203 increases the acceleration of the ions.

[0034] After the bundle exits the linear accelerator 200 , the ions, which may be a spot ion beam 155 , are directed towards a rotating disk 300 .

[0035] The controller 180 may be in communication with the RF generator 204 to control the implant energy. Additionally, as described in more detail below, the controller 180 may be in communication with the rotating disk 300. The controller 180 may also be in communication with other components.

[0036] Of course, the ion implantation system may include other components, such as quadrupole elements, additional electrodes for accelerating or decelerating the beam, and other elements.

[0037] In both of these embodiments, the ion implantation system includes an ion source and an accelerator for accelerating ions. The output from the semiconductor processing system, which may be a spot ion beam 155, is directed toward a rotating disk 300. In certain embodiments, a final energy magnet may be positioned before the rotating disk 300 to filter the spot ion beam 155.

[0038] One embodiment of a rotating disk 300 is shown in Figure 2A. A side view of the rotating disk is shown in Figure 2B.

[0039] The rotating disk 300 includes a central hub 310 that rotates about a central axis 301. The rotating disk 300 may be connected to a structure 330 using a spindle assembly 340. The structure 330 may be linearly movable. For example, the structure 330 may be a movable wall or plate. In another embodiment, the structure 330 may be a pivoting arm. Extending outward from the central hub 310 are a plurality of platens 320. There may be between four and twenty or more platens 320. These platens 320 may each utilize an electrostatic clamp. In other words, the plurality of platens are attached to the central hub 310.

[0040] Electrostatic clamping can be achieved using either AC or DC voltage. In one embodiment, the top surface of the platen can be a dielectric material such as ceramic. Beneath the top surface can be a plurality of electrodes 321.

[0041] In the case of a DC clamp, there are two electrodes 321, the first electrode biased with a positive voltage having a predetermined magnitude and the second electrode biased with a negative voltage having the same magnitude. The electrodes can be of any suitable shape. In one embodiment, the two electrodes can be adjacent spirals. The magnitude of the DC voltage can be between 200 and 2000 V.

[0042] In the case of an AC clamp, there may be an even number of electrodes 321, such as six electrodes. The electrodes 321 may be arranged in opposing pairs, where the phases of the two electrodes of a pair have a 180-degree phase difference. Thus, each pair of electrodes may be in electrical communication with a respective bipolar power signal, such as a square wave, whereby one electrode of the pair receives a positive output and the other electrode of the pair receives a negative output. Square wave outputs of the same period and amplitude are applied to all electrodes, but each square wave output is out of phase with its neighbors. The phase between adjacent electrodes may be equal to 360 degrees / N, where N is the number of electrodes.

[0043] In certain embodiments, the frequency of the AC or pulsed DC voltage can be between 1 and 60 Hz, while the amplitude can be 200 V or greater, such as between 200 and 4000 V. In certain embodiments, there are six electrodes configured as three pairs. One pair of these electrodes is powered by a first square wave, while the second pair of electrodes is powered by a second square wave, the second square wave being 120 degrees out of phase with the first square wave. Similarly, the third square wave is 120 degrees out of phase with the second square wave. Of course, other configurations are within the scope of this disclosure.

[0044] Each of the platens 320 is connected to the central hub 310 via a respective spoke 315. Within each spoke 315 are electrical conduits for its respective platen 320. These electrical conduits contain the electrical signals necessary for electrostatic clamping. Additionally, each spoke 315 may also carry coolant and backside gas.

[0045] In certain embodiments, the spokes 315 and corresponding platens 320 are rigidly attached to one another. Additionally, in some embodiments, each spoke 315 is rotatable about an axis 316 that extends radially from the central hub 310. In other words, the spokes 315 can rotate relative to the central hub 310. Rotation of the spokes 315 is illustrated in FIG. 2C. The amount of rotation is not limited by the present disclosure.

[0046] A rotary motor 313 is associated with each spoke 315 to control the rotation of the spokes 315. A block diagram of the internals of the central hub 310 is shown in FIG.

[0047] In this embodiment, a limited number of signals pass through the spindle assembly 340. These signals include one or more power signals 325. In some embodiments, each of the one or more power signals may be less than 120V. In certain embodiments, there may be a single power signal that provides 24V.

[0048] These signals also include a ground signal and a communication signal 326 for the hub controller 312. The communication signals 326 may be associated with any suitable network protocol, such as EtherCAT, Ethernet, Foundation Fieldbus, etc.

[0049] In certain embodiments, the number of signals passing through the spindle assembly 340 may be limited to 16 or less. Additionally, no high voltage signals, defined as voltages greater than 500V, pass through the spindle assembly 340.

[0050] Advantageously, spindle assemblies capable of passing 16 signals, each of which has a voltage of less than 500 V, are readily available. For example, certain spindle assemblies utilize slip rings to pass electrical signals to the central hub 310.

[0051] In other embodiments, the spindle assembly includes a rotary transformer for coupling signals from the structure 330 to the central hub 310 . In this embodiment, the power signal may be an AC voltage.

[0052] In other embodiments, the spindle assembly may utilize optical transmission to pass at least some of the signals through the spindle assembly.

[0053] In other embodiments, the spindle assembly may utilize contactless capacitive transmission to pass at least some of the signals through the spindle assembly.

[0054] Within the central hub 310 is an electrode power system 311. The electrode power system 311 receives power signals 325 from the spindle assembly 340 and generates the necessary electrode signals 314 for the electrodes 321 in each platen 320. In some embodiments, it may be beneficial to generate a separate set of electrode signals 314 for each platen 320. This may be useful for providing diagnostic information to the electrode power system 311 or for quickly identifying faults. Additionally, by having separate electrode signals 314 for each platen 320, the hub controller 312 can also detect the presence of a workpiece on a particular platen 320.

[0055] Thus, in one embodiment, the electrode power system 311 includes one electrode power supply that provides N*P electrode signals, where N is the number of electrodes 321 in each platen 320 and P is the number of platens 320. In another embodiment, the electrode power system 311 includes multiple electrode power supplies. In one embodiment, there may be P electrode power supplies, each generating N electrode signals. In yet another embodiment, there may be fewer than P electrode power supplies, with at least one of the electrode power supplies providing more than N electrode signals. In each of these embodiments, a total of N*P electrode signals 314 are provided.

[0056] In each of these embodiments, there are one or more electrode power supplies in the electrode power system 311. The one or more electrode power supplies are used to provide a dedicated signal to each of the electrodes 321 in each of the platens 320.

[0057] However, other embodiments are possible. For example, in another embodiment, the electrode power system 311 may include one electrode power supply that is used to generate N signals. Each of the N signals is then branched and distributed to the electrodes 321 in each of the platens 320. In particular embodiments, a current sensor is provided in the branch to each platen 320. Thus, although the electrode power system 311 only generates N signals, there are N*P current sensors. The N*P current sensors allow the electrode power system 311 to detect and isolate a fault to a particular platen.

[0058] By including a current sensor for each electrode 321, the hub controller 312 may also be able to detect the presence of a workpiece on a particular platen.

[0059] Techniques for detecting the presence of a workpiece or detecting a fault based on the current applied to each electrode 321 are known and will not be described herein.

[0060] Note that the power to each of these electrodes 321 in each of the platens is generated within the central hub 310, allowing very little signal to pass through the spindle assembly 340. Furthermore, this also means that any noise or electrical disturbances that may result from using slip rings or equivalent technology to pass high voltage signals to the platens will not interfere with proper platen operation or the ability to perform diagnostics on these signals.

[0061] Additionally, as described above, the spokes 315 may rotate relative to the central hub 310. Accordingly, one rotation motor 313 for each platen 320 is also included within the central hub 310. To minimize the number of signals passing through the spindle assembly 340, a hub controller 312 is located within the central hub. The hub controller 312 may include a processing unit such as a microcontroller, a personal computer, a dedicated controller, or another suitable processing unit. The hub controller 312 may also include a non-transitory computer-readable storage element such as semiconductor memory, magnetic memory, or another suitable memory. This non-transitory storage element may include instructions and other data that enable the hub controller 312 to perform the functions described herein.

[0062] Hub controller 312 receives communication signals 326 that pass through spindle assembly 340. These communication signals may be generated by controller 180 shown in FIGS. 1A-1B. Based on these communication signals, hub controller 312 may perform various functions. For example, hub controller 312 may control one or more rotation motors 313 to rotate them to a predetermined angle. Furthermore, hub controller 312 may control the operation of electrode power system 311 using electrode control signals 318. Furthermore, hub controller 312 may receive status signals 319 from electrode power system 311 and provide this information to controller 180.

[0063] Additionally, the hub controller 312 may control valves for fluid flow to the platens 320. FIG. 4 shows a block diagram illustrating possible fluid flow paths. The hub controller 312 may control the flow rate of backside gas to each platen 320. For example, a fluid conduit 350 carrying backside gas may pass through the spindle assembly 340. This fluid conduit 350 may then branch to each of the platens 320. In certain embodiments, the flow rate of backside gas to each platen 320 is independently controlled by the hub controller 312 through the use of multiple gas valves 351. In another embodiment, one gas valve 351 may be used to control the flow rate of backside gas to all of the platens 320.

[0064] The hub controller 312 may also control the flow of coolant to each platen 320. An inlet coolant conduit 360 and an outlet coolant conduit 361 may pass through the spindle assembly 340. In certain embodiments, the flow of coolant to each platen 320 is independently controlled by the hub controller 312 through the use of multiple coolant valves 362. In another embodiment, one coolant valve 362 may be used to control the flow of coolant to all of the platens 320.

[0065] In another embodiment, the coolant valve 362 may not be used within the central hub 310. Rather, the flow of coolant to the platens 320 may be controlled outside the central hub, such as by a coolant supply chiller.

[0066] The hub controller 312 may also monitor the temperature of each platen 320, such as through the use of thermal sensors 365. For example, the flow rate of coolant through the coolant valves 362 may be related to the temperature of the respective platens 320, as measured by the thermal sensors 365. Additionally, the hub controller 312 may also provide status and other information back to the controller 180.

[0067] If there is no coolant valve 362 in the central hub 310, the hub controller 312 may provide temperature information to the controller 180. The controller 180 can then use this information to control the coolant supply chiller.

[0068] Thus, again, rather than providing multiple control signals from the controller 180 to the rotation motor 313 and the electrode power system 311, the controller 180 passes only a limited number of communication signals 326 to the hub controller 312. In some embodiments, the number of communication signals 326 may be 16 or fewer. In other embodiments, the number of communication signals 326 may be 8 or fewer.

[0069] The systems and methods described herein have many advantages. Conventional batch implant systems rely on mechanical clamps due to the complex wiring of the numerous high-voltage signals required for electrostatic clamping. This also typically means that the angle at which the workpiece is positioned is fixed in these conventional batch implant systems. By locating the electrode power system 311 and hub controller 312 within the rotating central hub 310, the number of signals passing through the spindle assembly can be significantly reduced. For example, in a particular electrostatic clamp, there are six high-voltage signals for each platen. Thus, a rotating disk with multiple platens may require more high-voltage signals than can effectively pass through the spindle assembly. This enables the creation of batch implant systems that utilize electrostatic clamping and can achieve implantation at any implant angle. Furthermore, the inclusion of a hub controller allows additional functions, such as backside gas control, temperature monitoring, and other functions, to be performed without increasing the number of signals passing through the spindle assembly.

[0070] The present disclosure is not limited in scope by the specific embodiments described herein. Indeed, various other embodiments and modifications of the present disclosure, in addition to those described herein, will be apparent to those skilled in the art from the foregoing description and accompanying drawings. Accordingly, such other embodiments and modifications are intended to be included within the scope of the present disclosure. Moreover, while the present disclosure has been described herein in the context of particular implementations in particular environments for particular purposes, those skilled in the art will recognize that its utility is not limited thereto, and that the present disclosure may be beneficially implemented in any number of environments for any number of purposes. Accordingly, the claims set forth below should be construed in accordance with the broadest possible scope and spirit of the disclosure as described herein.

Claims

1. 1. A rotating disk for processing a plurality of workpieces, comprising: a central hub adapted to rotate; a plurality of platens mounted on the central hub, each platen including a plurality of electrodes and configured to electrostatically clamp a respective workpiece; an electrode power system disposed within the central hub that receives power signals and generates electrode signals to power the plurality of electrodes disposed within each of the plurality of platens to provide electrostatic clamping; and a rotating disk comprising a spindle assembly connecting the central hub to a structure, the power signal being passed to the electrode power system through the spindle assembly;

2. 2. The rotating disk of claim 1, wherein the power signal is less than 500V.

3. 3. The rotating disk of claim 2, wherein the power signal is 24V.

4. 10. The rotating disk of claim 1, wherein the electrode signals generated by the electrode power system for powering the plurality of electrodes have an amplitude of 200V or greater.

5. 5. The rotating disk of claim 4, wherein the amplitude is between 200V and 4000V.

6. 2. The rotating disk of claim 1, wherein the electrode power system comprises an electrode power supply, the electrode power supply generating N*P electrode signals, where N is the number of electrodes disposed in each platen and P is the number of platens.

7. 10. The rotating disk of claim 1, wherein the electrode power system comprises a plurality of electrode power supplies, the plurality of electrode power supplies generating N*P electrode signals, where N is the number of electrodes disposed in each platen and P is the number of platens.

8. The rotating disk of claim 7 , wherein the plurality of electrode power sources comprises P electrode power sources.

9. 2. The rotating disk of claim 1, wherein the electrode power system generates N signals, where N is the number of electrodes, and each of the N signals is branched and distributed to a respective electrode in each platen, each branch comprising a current sensor, whereby there are N*P current sensors, where P is the number of platens.

10. ion source, an accelerator for accelerating ions from the ion source; and An ion implantation system comprising the rotating disk of claim 1 .

11. 1. A rotating disk for processing a plurality of workpieces, comprising: a central hub adapted to rotate; a plurality of platens mounted on the central hub, each platen including a plurality of electrodes and configured to electrostatically clamp a respective workpiece; an electrode power system disposed within the central hub that receives power signals and generates electrode signals to power the plurality of electrodes disposed within each of the plurality of platens to provide electrostatic clamping; a hub controller disposed within the central hub; and A rotating disk comprising a spindle assembly connecting the central hub to a structure, wherein communication signals are passed to the hub controller through the spindle assembly.

12. 12. The rotating disk of claim 11, further comprising a fluid gas conduit passing through the spindle assembly and a gas valve disposed within the central hub, the hub controller controlling the gas valve to regulate the flow of backside gas to the plurality of platens.

13. The rotating disk of claim 11 further comprising an inlet coolant conduit and an outlet coolant conduit passing through the spindle assembly.

14. The rotating disk of claim 13 , further comprising a coolant valve disposed within the central hub, the hub controller controlling the temperature of the plurality of platens by controlling the coolant valve.

15. 15. The rotating disk of claim 14, further comprising a thermal sensor disposed in a platen, wherein the hub controller controls the temperature of the platen based on information from the thermal sensor.

16. 14. The rotating disk of claim 13, further comprising thermal sensors disposed within platens, wherein the hub controller passes temperature information regarding the plurality of platens using the communication signals, and wherein a temperature of a coolant is controlled based on the temperature information.

17. 12. The rotating disk of claim 11, further comprising spokes extending radially from the central hub, one of the plurality of platens disposed at a distal end of each spoke, the spokes configured to rotate about an axis extending radially from the central hub, the rotating disk further comprising a plurality of rotation motors, each rotation motor communicating with a respective spoke, and the hub controller controlling the rotation of each spoke.

18. ion source, an accelerator for accelerating ions from the ion source; and An ion implantation system comprising the rotating disk of claim 11.

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