Substrate Processing Equipment

Abstract

The present invention provides a substrate processing device as one illustrative embodiment. The substrate processing device includes a first chamber and a second chamber. The second chamber has: a passing space which is formed in walls forming the second chamber and in which a gas is passed along the extending direction of the walls; a supply opening which is in communication with the passing space and which is for supplying the gas; and discharge holes which are in communication with the passing space and which are for discharging the gas to the inside and / or the outside of the second chamber.

Description

[Technical Field]

[0001] SUMMARY OF THE INVENTION An exemplary embodiment of the present disclosure relates to a substrate processing apparatus. [Background technology]

[0002] Patent Document 1 discloses a substrate processing apparatus. This substrate processing apparatus includes a first chamber, a movable part that is vertically movable within the first chamber, and a second chamber that is held by the movable part within the first chamber and defines a processing space together with a substrate support. The second chamber includes a ceiling part that extends above the processing space. The ceiling part has multiple gas holes for supplying gas to the processing space. The ceiling part is in contact with the movable part, and the multiple gas holes in the ceiling part are connected to the multiple gas holes in the movable part. [Prior art documents] [Patent documents]

[0003] [Patent Document 1] Japanese Patent Publication No. 2022-66828 Summary of the Invention [Problem to be solved by the invention]

[0004] The present disclosure provides a technique for expanding the area in the radial direction of the chamber where gas exhaust holes are arranged. [Means for solving the problem]

[0005] In one exemplary embodiment, a substrate processing apparatus is provided. The substrate processing apparatus includes a first chamber and a second chamber. A mounting table for mounting a substrate is disposed in the first chamber. The second chamber is disposed within the first chamber and, together with the mounting table, defines a processing space for processing the substrate placed on the mounting table. The second chamber has a flow space formed inside a wall constituting the second chamber and for flowing gas along the extension direction of the wall, a supply port communicating with the flow space for supplying gas, and an exhaust hole communicating with the flow space for discharging the gas toward at least one of the inside and outside of the second chamber. [Effects of the Invention]

[0006] According to one exemplary embodiment, it is possible to increase the area in which gas exhaust holes are arranged in the radial direction of the chamber. [Brief explanation of the drawings]

[0007] [Figure 1] 1 illustrates a substrate processing system according to an exemplary embodiment. [Figure 2] 1 is a schematic diagram of a transfer module of a substrate processing system according to an exemplary embodiment; [Figure 3] 1 is a diagram illustrating a substrate processing apparatus according to an exemplary embodiment; [Figure 4] 1 is a partially enlarged cross-sectional view of a substrate processing apparatus according to an exemplary embodiment; [Figure 5] FIG. 2 is a view showing an inner wall of a second chamber of a substrate processing apparatus according to an exemplary embodiment. [Figure 6] FIG. 10 is a partially enlarged cross-sectional view of a substrate processing apparatus according to another exemplary embodiment. [Figure 7] FIG. 10 is a schematic view illustrating a supply port in a second chamber of a substrate processing apparatus according to yet another exemplary embodiment. DETAILED DESCRIPTION OF THE INVENTION

[0008] Various exemplary embodiments are described below.

[0009] In one exemplary embodiment, a substrate processing apparatus is provided. The substrate processing apparatus includes a first chamber and a second chamber. A mounting table for mounting a substrate is disposed in the first chamber. The second chamber is disposed within the first chamber and, together with the mounting table, defines a processing space for processing the substrate placed on the mounting table. The second chamber has a flow space, a supply port, and an exhaust hole. The flow space is formed inside a wall that constitutes the second chamber and allows gas to flow along the extension direction of the wall. The supply port communicates with the flow space and supplies gas. The exhaust hole communicates with the flow space and discharges gas toward at least one of the inside and outside of the second chamber.

[0010] In the substrate processing apparatus, gas supplied from the supply port passes through a flow space formed in a wall constituting the second chamber and is exhausted through an exhaust hole. Because the flow space is formed along the extension direction of the wall, the exhaust hole can be provided at any position in the wall. In this configuration, the position of the exhaust hole can be set regardless of the position of the gas supply port, so the arrangement area of ​​the gas exhaust hole can be expanded in the radial direction of the chamber.

[0011] In one exemplary embodiment, the wall of the second chamber may include a ceiling portion facing the mounting table and a peripheral wall portion formed continuously with the ceiling portion and surrounding the mounting table. The flow space may be divided into a first flow space formed within the ceiling portion along the extension direction of the ceiling portion and a second flow space formed within the peripheral wall portion along the extension direction of the peripheral wall portion. The supply port may include a first supply port communicating with the first flow space and a second supply port communicating with the second flow space. With this configuration, since the flow space is divided into the first flow space and the second flow space, gases can be supplied to the first flow space and the second flow space at different flow rates.

[0012] In one exemplary embodiment, different types of gas are supplied to the first supply port and the second supply port, and in this configuration, different gases can be discharged depending on the purpose in the space near the exhaust hole in the ceiling portion and the space near the exhaust hole in the peripheral wall portion.

[0013] In one exemplary embodiment, the exhaust holes include a first exhaust hole that opens toward the inside of the second chamber and a second exhaust hole that opens toward the outside of the second chamber. In this configuration, gas exhausted from the first exhaust hole that faces toward the inside of the second chamber can prevent deposits from accumulating on the inner wall of the second chamber. Gas exhausted from the second exhaust hole that faces toward the outside of the second chamber can prevent deposits from accumulating on the inner wall of the first chamber.

[0014] In one exemplary embodiment, the peripheral wall portion has an air vent that communicates between the inside and outside of the second chamber. The air vent and the flow space may be separated by a partition. The air vent are arranged in a staggered pattern. The exhaust holes are arranged between the air vents toward the inside of the second chamber. In this configuration, gas discharged from the exhaust holes travels along the inner wall of the second chamber and is discharged to the outside of the second chamber through the air vent. In this case, the gas is expected to protect the inner wall of the second chamber like an air curtain.

[0015] In one exemplary embodiment, the substrate processing apparatus may further include a movable part for moving the second chamber up and down within the first chamber, and a bellows connected to the movable part and separating the space within the first chamber from the outside of the first chamber. The gas is supplied to the supply port through the inside of the space formed by the bellows. This configuration makes it easy to ensure a gas supply path.

[0016] Various exemplary embodiments will be described in detail below with reference to the drawings, in which the same or equivalent parts are designated by the same reference numerals.

[0017] 1 is a diagram showing a substrate processing system PS having an inner chamber according to an exemplary embodiment, which includes process modules PM1 to PM6, a transfer module CTM, and a controller MC.

[0018] The substrate processing system PS may further include stages 2a-2d, containers 4a-4d, an aligner AN, load lock modules LL1 and LL2, and a transfer module TM. The number of stages, containers, and load lock modules in the substrate processing system PS may be any number greater than or equal to one. The number of process modules in the substrate processing system PS may be any number greater than or equal to one.

[0019] The stages 2a to 2d are arranged along one edge of the loader module LM. The containers 4a to 4d are mounted on the stages 2a to 2d, respectively. Each of the containers 4a to 4d is, for example, a container called a FOUP (Front Opening Unified Pod). Each of the containers 4a to 4d is configured to accommodate a substrate W therein.

[0020] The loader module LM has a chamber. The pressure in the chamber of the loader module LM is set to atmospheric pressure. The loader module LM has a transport device TU1. The transport device TU1 is, for example, a transport robot, and is controlled by the controller MC. The transport device TU1 is configured to transport a substrate W through the chamber of the loader module LM. The transport device TU1 can transport the substrate W between each of the containers 4a to 4d and the aligner AN, between the aligner AN and each of the load lock modules LL1 and LL2, and between each of the load lock modules LL1 and LL2 and each of the containers 4a to 4d. The aligner AN is connected to the loader module LM. The aligner AN is configured to adjust the position of the substrate W (calibrate the position).

[0021] Each of the load lock modules LL1 and LL2 is provided between the loader module LM and the transfer module TM. Each of the load lock modules LL1 and LL2 serves as a preliminary decompression chamber. Each of the load lock modules LL1 and LL2 is connected to the loader module LM via a gate valve. Furthermore, each of the load lock modules LL1 and LL2 is connected to the transfer module TM via a gate valve.

[0022] The transfer module TM has a transfer chamber TC that can be decompressed. The transfer module TM has a transfer apparatus TU2. The transfer apparatus TU2 is, for example, a transfer robot, and is controlled by a controller MC. The transfer apparatus TU2 is configured to transfer a substrate W via the transfer chamber TC. The transfer apparatus TU2 can transfer the substrate W between each of the load lock modules LL1, LL2 and each of the process modules PM1 to PM6, and between any two of the process modules PM1 to PM6.

[0023] Each of the process modules PM1 to PM6 is connected to the transfer module TM via a gate valve. Each of the process modules PM1 to PM6 is an apparatus configured to perform dedicated substrate processing. At least one of the process modules PM1 to PM6 is a substrate processing apparatus according to an exemplary embodiment described below.

[0024] The transfer module CTM includes a chamber and a transfer device. The transfer module CTM is controlled by a controller MC. The transfer module CTM includes the transfer device. The transfer device of the transfer module CTM is configured to transfer a second chamber provided in a first chamber of the substrate processing apparatus into the chamber of the transfer module CTM.

[0025] 2 is a diagram schematically illustrating a transfer module of a substrate processing system according to an exemplary embodiment. The transfer module CTM includes a chamber 110. The chamber 110 provides an inner space 112 and an inner space 114. The inner space 112 is provided above the inner space 114 and is separated from the inner space 114. A sidewall 110s of the chamber 110 provides an opening 110o that communicates with the inner space 112. The opening 110o can be opened and closed by a gate valve 116.

[0026] In one embodiment, a portion of the sidewall 110s has a dual structure formed from an inner wall 110i and an outer wall 110e. The inner wall 110i and the outer wall 110e define a space 110q therebetween. An opening 110o is formed in the inner wall 110i and the outer wall 110e. A gate valve 116 is provided along the inner wall 110i to open and close the opening 110o.

[0027] The transfer module CTM further includes a transfer device 120. The transfer device 120 is a transfer robot and includes an arm 120a. The transfer device 120 is provided in the inner space 112.

[0028] The transfer module CTM further includes an exhaust device 122. The exhaust device 122 is provided in the inner space 114. The exhaust device 122 is connected to the inner space 112 via a valve 124 and to the space 110q via a valve 126. The exhaust device 122 is configured to reduce the pressure in the inner space 112 and the space 110q.

[0029] The transport module CTM further includes a moving mechanism 130. The moving mechanism 130 includes a main body 132 and a plurality of wheels 134. The main body 132 incorporates a power source such as a battery, a power source, and a steering mechanism. The wheels 134 are rotated by the power source within the main body 132, and move the transport module CTM in a direction controlled by the steering mechanism within the main body 132. Note that the moving mechanism 130 may be a mechanism employing a type other than wheels, such as a walking type, as long as it is capable of moving the transport module CTM.

[0030] The transfer module CTM further includes a sensor 138 and a controller 140. The sensor 138 is attached to the outer wall of the chamber 110. The controller 140 is provided in the internal space 114. The sensor 138 senses the environment around the transfer module CTM and outputs the sensing result to the controller 140. The sensor 138 is, for example, an image sensor, and outputs an image of the environment around the transfer module CTM to the controller 140. The controller 140 may be a computer including a processor, a storage device such as a memory, and a communication unit. The controller 140 is configured to control each component of the transfer module CTM. The controller 140 controls the movement mechanism 130 to move the transfer module CTM using the sensing result of the sensor 138 to connect the transfer module CTM to the substrate processing apparatus 1. The controller 140 also controls the exhaust device 122 and the valves 124 and 126.

[0031] The controller MC is configured to control each part of the substrate processing system PS. The controller MC may be a computer equipped with a processor, a storage device, an input device, a display device, etc. The controller MC executes a control program stored in the storage device and controls each part of the substrate processing system PS based on the recipe data stored in the storage device.

[0032] Hereinafter, a substrate processing apparatus according to an exemplary embodiment will be described. FIG. 3 is a diagram schematically illustrating a substrate processing apparatus according to an exemplary embodiment. FIG. 4 is a partially enlarged cross-sectional view of a substrate processing apparatus according to an exemplary embodiment. The substrate processing apparatus 1 shown in FIGS. 3 and 4 is a capacitively coupled plasma processing apparatus. The substrate processing apparatus 1 includes a first chamber 10, a second chamber 20 (inner chamber), and a substrate support 30.

[0033] The first chamber 10 provides an inner space. The first chamber 10 is made of a metal such as aluminum. The first chamber 10 is electrically grounded. A corrosion-resistant film may be formed on the surface of the first chamber 10. The corrosion-resistant film may be made of a material such as aluminum oxide (Al2O3) or yttrium oxide (YO3).

[0034] The first chamber 10 includes a sidewall 10s. The sidewall 10s has a substantially cylindrical shape. A central axis of the sidewall 10s extends vertically and is shown as an axis AX in FIG. 3. The sidewall 10s provides a passage 10p. The interior space of the first chamber 10 is connected to the interior space of the transfer chamber TC of the transfer module TM via the passage 10p. The passage 10p can be opened and closed by a gate valve 10g. The substrate W passes through the passage 10p when being transferred between the interior space of the first chamber 10 and the outside of the first chamber 10.

[0035] The side wall 10s further provides an opening 10o. The opening 10o has a size that allows the second chamber 20 to pass through. The internal space of the first chamber 10 can be connected to the internal space of the transfer module CTM through the opening 10o. The opening 10o can be opened and closed by a gate valve 10v.

[0036] In one embodiment, a portion of the sidewall 10s has a double structure formed of an inner wall 10i and an outer wall 10e. The inner wall 10i and the outer wall 10e provide a space 10q therebetween. An opening 10o is formed in the inner wall 10i and the outer wall 10e. A gate valve 10v is provided along the inner wall 10i to open and close the opening 10o.

[0037] The first chamber 10 may further include an upper portion 10u. The upper portion 10u extends from the upper end of the side wall 10s in a direction intersecting with the axis line AX. The upper portion 10u provides an opening in a region intersecting with the axis line AX.

[0038] The first chamber 10 further includes a movable part 10m. The movable part 10m is provided below the upper part 10u of the first chamber 10 and inside the side wall 10s. The movable part 10m is configured to be movable upward and downward within the first chamber 10.

[0039] The substrate processing apparatus 1 further includes a lift mechanism 12. The lift mechanism 12 is configured to move the movable part 10m upward and downward. The lift mechanism 12 includes a drive device 12d and a shaft 12s. The movable part 10m is fixed to the shaft 12s. The shaft 12s extends upward from the movable part 10m through an opening in the upper part 10u. The drive device 12d is provided outside the first chamber 10. The drive device 12d is configured to move the shaft 12s upward and downward. The drive device 12d may include, for example, a motor for moving the shaft 12s. The upward and downward movement of the shaft 12s causes the movable part 10m to move upward and downward.

[0040] The substrate processing apparatus 1 may further include a bellows 14. The bellows 14 is provided between the movable part 10m and the upper part 10u. The bellows 14 separates the inner space of the first chamber 10 from the outside of the first chamber 10. The lower end of the bellows 14 is fixed to the movable part 10m. The upper end of the bellows 14 is fixed to the upper part 10u.

[0041] In one embodiment, the movable part 10m may include a first member 10a and a second member 10b. The first member 10a and the second member 10b are fixed to each other. The first member 10a has a substantially disk shape. The first member 10a may constitute an upper electrode in the substrate processing apparatus 1. The second member 10b has a substantially cylindrical shape. The second member 10b extends along the outer periphery of the first member 10a and above the first member 10a. The lower end of the bellows 14 is fixed to the upper end of the second member 10b. The first member 10a and the second member 10b are made of a conductor such as aluminum. The first member 10a and the second member 10b may be electrically connected to the first chamber 10.

[0042] In one embodiment, the movable member 10m may provide a gas flow path 10a1 connected to a gas supply unit 16. The gas supply unit 16 is provided outside the first chamber 10. The gas supply unit 16 includes one or more gas sources used in the substrate processing apparatus 1, one or more flow rate controllers, and one or more valves. Each of the one or more gas sources is connected to the gas flow path 10a1 via a corresponding flow rate controller and a corresponding valve. The gas flow path 10a1 is formed in, for example, the first member 10a. A gas path 16a from the gas supply unit 16 to the gas flow path 10a1 may be disposed in a shaft 12s disposed in the space inside the bellows 14.

[0043] The substrate support 30 (mounting table) is disposed within the first chamber 10 and below the movable part 10m. The substrate support 30 is configured to support a substrate W placed thereon. The substrate support 30 may be supported by a support part 31. The support part 31 has a substantially cylindrical shape. The support part 31 is formed from an insulator such as quartz. The support part 31 may extend upward from a bottom plate 32. The bottom plate 32 may be formed from a metal such as aluminum.

[0044] The substrate support 30 may include a lower electrode 34 and an electrostatic chuck 36. The lower electrode 34 has a substantially disk shape. The central axis of the lower electrode 34 substantially coincides with the axis AX. The lower electrode 34 is formed from a conductor such as aluminum. The lower electrode 34 has a flow path 34f therein. The flow path 34f extends, for example, in a spiral shape. The flow path 34f is connected to a chiller unit 35. The chiller unit 35 is provided outside the first chamber 10. The chiller unit 35 supplies a coolant to the flow path 34f. The coolant supplied to the flow path 34f is returned to the chiller unit 35.

[0045] The substrate processing apparatus 1 may further include a first high-frequency power supply 41 and a second high-frequency power supply 42. The first high-frequency power supply 41 is a power supply that generates a first high-frequency power. The first high-frequency power has a frequency suitable for generating plasma. The frequency of the first high-frequency power is, for example, 27 MHz or higher. The first high-frequency power supply 41 is electrically connected to the lower electrode 34 via a matching device 41m. The matching device 41m has a matching circuit for matching the impedance of the load side (lower electrode 34 side) of the first high-frequency power supply 41 to the output impedance of the first high-frequency power supply 41. Note that the first high-frequency power supply 41 may be connected to the upper electrode via the matching device 41m, instead of the lower electrode 34.

[0046] The second high frequency power supply 42 is a power supply that generates second high frequency power. The second high frequency power has a frequency suitable for attracting ions to the substrate W. The frequency of the second high frequency power is, for example, 13.56 MHz or less. The second high frequency power supply 42 is electrically connected to the lower electrode 34 via a matching device 42m. The matching device 42m has a matching circuit for matching the impedance of the load side (lower electrode 34 side) of the second high frequency power supply 42 to the output impedance of the second high frequency power supply 42.

[0047] The electrostatic chuck 36 is disposed on the lower electrode 34. The electrostatic chuck 36 includes a body and an electrode 36a. The body of the electrostatic chuck 36 has a substantially disc shape. The central axis of the electrostatic chuck 36 substantially coincides with the axis AX. The body of the electrostatic chuck 36 is formed from ceramic. The substrate W is placed on the upper surface of the body of the electrostatic chuck 36. The electrode 36a is a film formed from a conductor. The electrode 36a is disposed within the body of the electrostatic chuck 36. The electrode 36a is connected to a DC power supply 36d via a switch 36s. When a voltage from the DC power supply 36d is applied to the electrode 36a, an electrostatic attractive force is generated between the electrostatic chuck 36 and the substrate W. The generated electrostatic attractive force attracts the substrate W to the electrostatic chuck 36 and the substrate W is held by the electrostatic chuck 36. The substrate processing apparatus 1 may be provided with a gas line for supplying a heat transfer gas (for example, helium gas) to the gap between the electrostatic chuck 36 and the rear surface of the substrate W.

[0048] The substrate support 30 may support an edge ring ER disposed thereon. The substrate W is placed on the electrostatic chuck 36 within a region surrounded by the edge ring ER. The edge ring ER is made of, for example, silicon, quartz, or silicon carbide.

[0049] The substrate processing apparatus 1 may further include an insulating portion 37. The insulating portion 37 is made of an insulator such as quartz. The insulating portion 37 may have a generally cylindrical shape. The insulating portion 37 extends along the outer periphery of the lower electrode 34 and the outer periphery of the electrostatic chuck 36.

[0050] The substrate processing apparatus 1 may further include a conductor 38. The conductor 38 is made of a conductor such as aluminum. The conductor 38 may have a generally cylindrical shape. The conductor 38 is provided along the outer periphery of the substrate support 30. Specifically, the conductor 38 extends circumferentially outside the insulating portion 37 in the radial direction. The radial direction and the circumferential direction are directions based on the axis AX. The conductor 38 is connected to ground. In one example, the conductor 38 is connected to ground via the bottom plate 32 and the first chamber 10.

[0051] The substrate processing apparatus 1 may further include a cover ring 39. The cover ring 39 is made of an insulator such as quartz. The cover ring 39 has an annular shape. The cover ring 39 is provided on the insulating portion 37 and the conductor portion 38 so as to be located radially outside the region in which the edge ring ER is disposed.

[0052] The second chamber 20 is an inner chamber disposed within the first chamber 10 of the substrate processing apparatus 1 and configured to define a processing space S together with the substrate support 30. The second chamber 20 is removable from the first chamber 10 and can be transported between the inner space of the first chamber 10 and the outside of the first chamber 10 via the opening 10o.

[0053] In one exemplary embodiment, the second chamber 20 includes a flow space 20a, a supply port 20b, and an exhaust port 20c. For example, the wall 21 constituting the second chamber 20 includes a ceiling portion 22 and a peripheral wall portion 23. The wall 21 may be formed of a material with low electrical conductivity, such as Si or SiC. The wall 21 may also have a multilayer structure, and for example, the surface of the wall 21 may be covered with a material that suppresses particle generation (a low-contamination material). In this case, the surface material may be aluminum oxide, yttrium oxide, silicon dioxide (SiO), silicon (Si), silicon carbide (SiC), or the like. The substrate covered with the surface material may be aluminum (Al), tungsten (W), molybdenum (Mo), titanium (Ti), carbon, ceramics, silicon dioxide, silicon, silicon carbide, or the like.

[0054] The ceiling portion 22 is a portion of the wall body 21 that faces the substrate support 30. The ceiling portion 22 is, for example, disk-shaped and can be supported by the movable portion 10m while abutting against the lower surface of the movable portion 10m. A contact member 25 is provided on the upper surface of the ceiling portion 22. The contact member 25 is disposed between the ceiling portion 22 and the lower surface of the movable portion 10m and electrically connects the movable portion 10m and the ceiling portion 22. The contact member 25 is formed of a material having a volume resistivity equal to or lower than the volume resistivity of the material constituting the outer surface of the wall body 21. In one example, multiple contact members 25 may be evenly disposed in the circumferential direction around the axis AX. By disposing the contact members 25, the wall body 21 is electrically connected to the grounded movable portion 10m, forming a high-frequency return path.

[0055] The substrate processing apparatus 1 further includes a clamp 50 and a release mechanism 60 to releasably fix the ceiling portion 22 of the second chamber 20 to the first chamber 10. The clamp 50 releasably fixes the connecting member 28 of the second chamber 20 to the movable portion 10m of the first chamber 10. The release mechanism 60 is configured to release the fixation of the second chamber 20 by the clamp 50.

[0056] 3 and 4, in one embodiment, the clamp 50 includes a plurality of support portions 52 and a plurality of springs 54. The clamp 50 may further include a plate 56. Note that the number of support portions 52 and the number of springs 54 of the clamp 50 may each be one.

[0057] Each of the plurality of support portions 52 has a lower end 52b. The lower ends 52b are formed so that the ceiling portion 22 is suspended therefrom. A plurality of springs 54 are provided to bias the ceiling portion 22 against the movable portion 10m of the first chamber 10.

[0058] In one embodiment, the movable portion 10m of the first chamber 10 provides a cavity 10c. The cavity 10c may extend circumferentially around the axis AX. The cavity 10c is closed by a lid 58. The lid 58 is provided on the movable portion 10m of the first chamber 10 to close the cavity 10c. The movable portion 10m further provides a plurality of holes 10t. The holes 10t may be arranged at equal intervals around the axis AX. The holes 10t extend downward from the cavity 10c and open toward the ceiling portion 22. The ceiling portion 22 provides a plurality of recesses 20r. The recesses 20r are respectively connected to the holes 10t when the second chamber 20 is fixed to the first chamber 10.

[0059] In one embodiment, each of the plurality of support portions 52 is rod-shaped. The lower end 52b of each of the plurality of support portions 52 protrudes horizontally. The bottom of each of the plurality of recesses 20r includes an extension 20e. The extension 20e is formed so that the lower end 52b of a corresponding one of the plurality of support portions 52 can be positioned therein. In one example, each of the plurality of support portions 52 may be a screw, and the lower end 52b of each of the plurality of support portions 52 may be a screw head.

[0060] The plurality of supports 52 extend downward from the cavity 10c through the plurality of holes 10t. When the ceiling portion 22 is suspended from the plurality of supports 52, the lower ends 52b of the plurality of supports 52 are respectively disposed within the plurality of recesses 20r and their extensions 20e.

[0061] The upper ends of the plurality of support portions 52 are fixed to a plate 56 within the cavity 10c. The plurality of springs 54 are disposed within the cavity 10c. The plurality of springs 54 are disposed between the plate 56 and a surface of the movable portion 10m that defines the cavity 10c from below. In one embodiment, each of the plurality of springs 54 is a coil spring. The plurality of springs 54 are disposed so as to surround the plurality of support portions 52 within the cavity 10c.

[0062] In one embodiment, the release mechanism 60 includes an air supplier. The air supplier applies air pressure to separate the lower ends 52 b of the support portions 52 from the second chamber 20 to release the ceiling portion 22 from the clamp 50. The air supplier of the release mechanism 60 can supply air to the gap between the lid body 58 and the plate 56. When air is supplied to the gap between the lid body 58 and the plate 56, the plate 56 and the support portions 52 move downward, and the lower ends 52 b of the support portions 52 are separated from the second chamber 20. In other words, the ceiling portion 22 is released from the clamp 50. With the ceiling portion 22 released from the clamp 50, the second chamber 20 is released from the first chamber 10, and the second chamber 20 can be transported from the interior space of the first chamber 10 to the outside of the first chamber 10.

[0063] The peripheral wall portion 23 is formed continuously with the ceiling portion 22 and is configured to surround the substrate support 30. For example, the peripheral wall portion 23 includes a side portion 23a and a bottom portion 23b. The side portion 23a is cylindrical. The upper end of the side portion 23a is connected to the periphery of the ceiling portion 22. The bottom portion 23b is annular. The outer edge of the bottom portion 23b is connected to the lower end of the side portion 23a. When viewed from the direction along the axis AX, the outer edge of the bottom portion 23b follows the outer edge of the side portion 23a, and the inner edge of the bottom portion 23b follows the outer edge of the conductor portion 38.

[0064] The bottom portion 23b may be electrically connected to a grounded portion that is provided to surround the substrate support 30. That is, the bottom portion 23b may be connected to the ground. In one exemplary embodiment, the bottom portion 23b is electrically connected to a conductor portion 38 that serves as the ground portion. In the illustrated example, the bottom portion 23b is electrically connected to the conductor portion 38 by a contact 40 provided in the substrate processing apparatus 1. This forms a high-frequency return path.

[0065] The contact 40 is electrically connected to the conductor portion 38. The bottom portion 23b abuts against the contact 40 while defining a processing space S together with the substrate support 30. The processing space S is a space in which the substrate W is processed. In one embodiment, the contact 40 is disposed radially outside the cover ring 39 and extends upward from the conductor portion 38.

[0066] The contact 40 may be configured to resiliently contact the bottom portion 23b. As shown in FIG. 4, the contact 40 may have a spring 40s. The contact 40 may further have a contact portion 40c. The spring 40s and the contact portion 40c are conductive. The lower end of the spring 40s is fixed to the conductor portion 38. The spring 40s extends upward from the conductor portion 38. The contact portion 40c is fixed to the upper end of the spring 40s. The contact portion 40c is a portion that contacts the bottom portion 23b. In the illustrated example, a groove that accommodates the contact portion 40c is provided in the bottom portion 23b.

[0067] The flow space 20a is formed inside the wall 21 that constitutes the second chamber 20, and is configured to allow gas to flow along the extending direction of the wall 21. The extending direction of the wall 21 may be the direction of expansion of the inner or outer surface of the wall 21. In one exemplary embodiment, in the second chamber 20, the flow space 20a is formed in the ceiling portion 22 along the extending direction of the ceiling portion 22. The flow space 20a in the ceiling portion 22 has a substantially circular plate shape. The flow space 20a is formed in the side portion 23a along the extending direction of the side portion 23a. The flow space 20a in the side portion 23a has a substantially cylindrical shape. The flow space 20a is formed in the bottom portion 23b along the extending direction of the bottom portion 23b. The flow space 20a in the bottom portion 23b has a substantially annular shape. For example, the wall 21 of the second chamber 20 may have a double structure made up of an inner wall 21a and an outer wall 21b so that a flow space 20a is formed therein. Note that, although the flow space 20a in the illustrated example is a space that extends along the extension direction of the wall 21, the flow space 20a may also be formed by a collection of tubular spaces.

[0068] The second chamber 20 has a supply port 20b for supplying gas to the flow space 20a. The supply port 20b may be connected to the flow space 20a and exposed to the outside of the second chamber 20. In one exemplary embodiment, when the second chamber 20 is supported by the movable part 10m, the supply port 20b of the second chamber 20 is connected to a gas flow path 10a1 provided in the movable part 10m. The second chamber 20 may have one or more supply ports 20b. For example, a plurality of supply ports 20b may be provided so as to be equally spaced circumferentially around the axis AX. In the illustrated example, the supply port 20b is provided closer to the axis AX than the contact member 25 in the radial direction around the axis AX. In one example, the supply port 20b of the second chamber 20 and the gas flow path 10a1 provided in the movable part 10m may have corresponding fluid couplings (quick joints) and be connected to each other via the fluid couplings.

[0069] The exhaust hole 20c communicates with the flow space 20a. The exhaust hole 20c is configured to exhaust gas supplied from the supply port 20b to the flow space 20a. In one exemplary embodiment, the second chamber 20 is formed with a first exhaust hole 20c1 that exhausts gas toward the inside of the second chamber 20 and a second exhaust hole 20c2 that exhausts gas toward the outside of the second chamber 20. That is, the first exhaust hole 20c1 penetrates the inner wall 21a that constitutes the wall body 21, and the second exhaust hole 20c2 penetrates the outer wall 21b that constitutes the wall body 21. For example, only the first exhaust hole 20c1 is formed in the ceiling portion 22, and the second exhaust hole 20c2 is not formed. The side portion 23a and the bottom portion 23b are formed with the first exhaust hole 20c1 and the second exhaust hole 20c2. It is sufficient that the second chamber 20 has at least one of the first exhaust hole 20c1 and the second exhaust hole 20c2.

[0070] The wall 21 of the second chamber 20 may have an air vent 20d. The air vent 20d connects the inside and outside of the second chamber 20. In one exemplary embodiment, the air vent 20d does not connect to the flow space 20a. That is, the air vent 20d and the flow space 20a are separated from each other by a partition wall 21c. The partition wall 21c has a cylindrical shape to define the air vent 20d and connects the inner wall 21a and the outer wall 21b.

[0071] FIG. 5 is a schematic diagram of the side portion 23a of the second chamber 20 as viewed from the inside of the second chamber 20. As shown in FIG. 5, the air vents 20d may be arranged in a staggered pattern. For example, the side portion 23a has the air vents 20d arranged at equal intervals in the vertical and circumferential directions, and adjacent air vents 20d in the vertical direction are shifted from each other in the circumferential direction. The first exhaust hole 20c1 is located between the staggered air vents 20d. That is, the first exhaust holes 20c1 and the air vents 20d are alternately arranged in the circumferential direction and also alternately arranged in the vertical direction. Note that the arrangement positions of the first exhaust hole 20c1 and the second exhaust hole 20c2 may coincide with each other on the peripheral wall portion 23. In one example, the air vents 20d and the exhaust hole 20c are both circular, and the diameter of the air vent 20d may be larger than the diameter of the exhaust hole 20c.

[0072] The substrate processing apparatus 1 may further include an exhaust device 70. The exhaust device 70 includes a pressure regulator such as an automatic pressure control valve and a decompression pump such as a turbomolecular pump. The exhaust device 70 is connected to the bottom of the first chamber 10 below the bottom portion 23b.

[0073] A method for removing the second chamber 20 will be described. The second chamber 20 can be removed from the first chamber 10, for example, for maintenance, and transferred from the inner space of the first chamber 10 to the inner space of the chamber 110 of the transfer module CTM. The operation of the substrate processing apparatus 1 may be controlled by the controller MC. The operation of the transfer module CTM may be controlled by the controller 140. The controller 140 may control the transfer module CTM based on information such as commands transmitted from the controller MC.

[0074] In one example, first, the transfer module CTM is moved, and the chamber 110 of the transfer module CTM is connected to the first chamber 10 of the substrate processing apparatus 1. When the chamber 110 is connected to the first chamber 10, the sidewall 10s, the gate valve 10v, the sidewall 110s, and the gate valve 10v define a sealed space. The sealed space includes the space 10q and the space 110q. The pressure of this sealed space is reduced by the exhaust device 122. At the same time, the pressure of the inner space 112 of the chamber 110 of the transfer module CTM is also reduced by the exhaust device 122.

[0075] Next, the gate valves 10v and 116 are moved to connect the internal space of the first chamber 10 with the internal space 112 of the chamber 110 of the transfer module CTM. Next, the lift mechanism 12 moves the movable part 10m and the second chamber 20 upwardly away from the substrate support 30 within the first chamber 10. Next, the arm 120a of the transfer device 120 enters the internal space of the first chamber 10 so as to extend below the second chamber 20. The movable part 10m and the second chamber 20 are moved downward by the lift mechanism 12, and the second chamber 20 is placed on the arm 120a. Next, the release mechanism 60 releases the second chamber 20 from being fixed by the clamp 50. Next, the transfer device 120 moves the second chamber 20 horizontally, causing the lower ends 52b of the multiple supports 52 to retract from the extension part 20e. Next, the movable part 10m is moved upward by the lift mechanism 12 and separated from the second chamber 20. As a result, the lower end 52b of the support part 52 moves to the outside of the recessed part 20r. Next, the second chamber 20 is moved by the arm 120a of the transfer device 120 from the inner space of the first chamber 10 to the inner space 112 of the chamber 110 of the transfer module CTM via the openings 10o and 110o. Then, the gate valves 10v and 116 are moved to close the openings 10o and 110o.

[0076] 6 is a cross-sectional view illustrating a second chamber according to another exemplary embodiment. Configurations not specifically described below or omitted from the drawings may be similar to those of the second chamber 20 shown in FIG. 4 and elsewhere. The second chamber 200 in one exemplary embodiment includes a first flow space 200a, a second flow space 200b, an exhaust hole 20c, and an air vent 20d. The wall 221 constituting the second chamber 200 includes a ceiling portion 22 and a peripheral wall portion 23, similar to the second chamber 20.

[0077] The first flow space 200a and the second flow space 200b are formed inside a wall 221 constituting the second chamber 200 and are configured to allow gas to flow along the extending direction of the wall 221. The first flow space 200a is formed in the ceiling portion 22 along the extending direction of the ceiling portion 22. The second flow space 200b is formed inside the peripheral wall portion 23 along the extending direction of the peripheral wall portion 23. That is, the second flow space 200b is formed in the side portion 23a along the extending direction of the side portion 23a, and in the bottom portion 23b along the extending direction of the bottom portion 23b. The first flow space 200a and the second flow space 200b are separated from each other and do not communicate with each other. A first exhaust hole 20c1 may be formed in the first flow space 200a. A first exhaust hole 20c1 and a second exhaust hole 20c2 may be formed in the second flow space 200b. Similarly to the second chamber 20, the peripheral wall portion 23 may be provided with an air vent 20d.

[0078] The second chamber 200 has a first supply port 201 for supplying gas to the first flow space 200a and a second supply port 202 for supplying gas to the second flow space 200b. The first supply port 201 may have a configuration similar to that of the supply port 20b in the second chamber 20.

[0079] The second supply port 202 communicates with the second flow space 200b and is exposed to the outside at the peripheral wall portion 23. In one exemplary embodiment, the second supply port 202 is connected to a gas discharge path 38a provided in the conductor 38. One or more second supply ports 202 may be provided in the second chamber 200. For example, a plurality of second supply ports 202 may be provided so as to be equally spaced circumferentially around the axis AX. For example, the gas discharge path 38a is provided inside the conductor 38 and opens at a position outer than the contact 40 in the radial direction centered on the axis AX. In one example, the second supply port 202 and the gas discharge path 38a may have corresponding fluid couplings and communicate with each other via the fluid couplings.

[0080] The gas exhaust path 38a connected to the second supply port 202 may be connected to a gas supply unit 216 separate from the gas supply unit 16. The gas supply unit 216 includes one or more gas sources, one or more flow rate controllers, and one or more valves used in the substrate processing apparatus 1. Each of the one or more gas sources is connected to the gas exhaust path 38a via a corresponding flow rate controller and a corresponding valve. For example, different types of gases may be supplied to the first supply port 201 and the second supply port 202 from the gas supply unit 16 and the gas supply unit 216.

[0081] FIG. 7 is a schematic diagram illustrating a supply port in a second chamber of a substrate processing apparatus according to yet another exemplary embodiment. FIG. 7 is a schematic plan view of the ceiling portion 22 constituting the wall body 21, viewed from above, illustrating the configuration of another exemplary embodiment of the supply port 20b and the contact member 25 provided in the second chamber 20. As shown in FIG. 7, the supply ports 20b may each have an arc shape and be arranged on a circumference centered on the axis AX. Similarly, the contact members 25 may each have an arc shape and be arranged on a circumference centered on the axis AX. In the illustrated example, the contact members 25 are arranged radially outward of the supply ports 20b around the axis AX. For example, the gap between the supply ports 20b and the gas flow path 10a1 may be sealed with a sealing member such as an O-ring. Note that the multiple supply ports 20b arranged on the circumference may be connected to each other to form a single annular supply port.

[0082] As described above, in one exemplary embodiment, a substrate processing apparatus 1 is provided. The substrate processing apparatus 1 includes a first chamber 10 and a second chamber 20. A substrate support 30 for placing a substrate W thereon is disposed in the first chamber 10. The second chamber 20 is disposed within the first chamber 10 and defines, together with the substrate support 30, a processing space S for processing the substrate W placed on the substrate support 30. The second chamber 20 includes a flow space 20a, a supply port 20b, and an exhaust hole 20c. The flow space 20a is formed inside a wall 21 constituting the second chamber 20 and allows gas to flow along the extension direction of the wall 21. The supply port 20b communicates with the flow space 20a and supplies gas. The exhaust hole 20c communicates with the flow space 20a and exhausts gas toward at least one of the inside and outside of the second chamber 20.

[0083] For example, when gas holes that communicate vertically are formed between the second chamber and the movable part supporting the second chamber, the gas outlet in the second chamber is limited to the area where the second chamber and the movable part contact each other. In one exemplary embodiment, in the substrate processing apparatus 1, gas supplied from the supply port 20b passes through the flow space 20a formed in the wall 21 that constitutes the second chamber 20 and is exhausted from the exhaust hole 20c. Because the flow space 20a is formed along the extension direction of the wall 21, the exhaust hole 20c can be provided at any position in the wall 21. In this configuration, the position of the exhaust hole 20c can be determined regardless of the position of the gas supply port 20b, thereby expanding the arrangement area of ​​the gas exhaust hole 20c in the radial direction of the chamber.

[0084] In one exemplary embodiment, the wall 221 of the second chamber 200 may include a ceiling portion 22 facing the substrate support 30 and a peripheral wall portion 23 formed continuously with the ceiling portion 22 and surrounding the substrate support 30. The flow space 20a may be divided into a first flow space 200a formed inside the ceiling portion 22 along the extension direction of the ceiling portion 22 and a second flow space 200b formed inside the peripheral wall portion 23 along the extension direction of the peripheral wall portion 23. The second chamber 200 may include a first supply port 201 communicating with the first flow space 200a and a second supply port 202 communicating with the second flow space 200b. With this configuration, since the flow space 20a is divided into the first flow space 200a and the second flow space 200b, gases can be supplied to the first flow space 200a and the second flow space 200b at different flow rates.

[0085] In one exemplary embodiment, different types of gases are supplied to first supply port 201 and second supply port 202. In this configuration, different gases can be discharged depending on the purpose from the space near exhaust hole 20c in ceiling portion 22 and the space near exhaust hole 20c in peripheral wall portion 23.

[0086] In one exemplary embodiment, exhaust holes 20c include a first exhaust hole 20c1 that opens toward the inside of second chamber 20 and a second exhaust hole 20c2 that opens toward the outside of second chamber 20. In this configuration, gas discharged from first exhaust hole 20c1 facing toward the inside of second chamber 20 can prevent deposits from accumulating on the inner wall of second chamber 20. Gas discharged from second exhaust hole 20c2 facing toward the outside of second chamber 20 can prevent deposits from accumulating on the inner wall of first chamber 10.

[0087] In one exemplary embodiment, the peripheral wall portion 23 has ventilation holes 20d that communicate between the inside and outside of the second chamber 20. The ventilation holes 20d and the flow space 20a may be separated by a partition wall 21c. The ventilation holes 20d are arranged in a staggered pattern. The exhaust holes 20c are arranged between the ventilation holes 20d toward the inside of the second chamber 20. In this configuration, gas discharged from the exhaust holes 20c travels along the inner wall of the second chamber 20 and is discharged to the outside of the second chamber 20 through the ventilation holes 20d. In this case, the gas is expected to protect the inner wall of the second chamber 20 like an air curtain.

[0088] In one exemplary embodiment, the gas from the gas supply unit 16 is supplied to the supply port 20b through the inside of the space formed by the bellows 14. In this configuration, the gas supply path can be easily secured.

[0089] Although various exemplary embodiments have been described above, the present invention is not limited to the above-described exemplary embodiments, and various additions, omissions, substitutions, and modifications may be made. Furthermore, elements in different embodiments may be combined to form other embodiments.

[0090] For example, in other embodiments, the substrate processing apparatus may be another type of plasma processing apparatus, such as an inductively coupled plasma processing apparatus, an electron cyclotron resonance (ECR) plasma processing apparatus, or a plasma processing apparatus that generates plasma using microwaves. In still other embodiments, the substrate processing apparatus may be a substrate processing apparatus configured to perform substrate processing other than plasma processing.

[0091] Furthermore, although the embodiment in which the second chamber is supported by the clamp 50 has been shown, for example, a protrusion that protrudes upward may be provided on the second chamber, and the protrusion may be supported by the movable part 10m. Furthermore, the embodiment in which the contact 40 is in electrical contact with the second member has been shown, for example, the contact may be formed on the bottom part 23b of the second chamber 20, and a recess for accommodating the contact may be formed in the conductor part 38.

[0092] In addition, although the example has been shown in which gas path 16a connecting gas supply unit 16 to gas flow path 10a1 passes through shaft 12s arranged inside the space formed by the bellows, the configuration of the path is not limited to this. For example, two bellows with different diameters may be arranged concentrically, and the space formed between the bellows may be used as the gas path.

[0093] Furthermore, although an example has been shown in which the movable part 10m and the second chamber 20 are electrically connected by the contact member 25, for example, the clamp 50 may function as the contact member.

[0094] From the foregoing, it will be understood that various embodiments of the present disclosure have been described herein for purposes of illustration, and that various modifications may be made without departing from the scope and spirit of the present disclosure. Accordingly, the various embodiments disclosed herein are not intended to be limiting, with the true scope and spirit being indicated by the appended claims.

[0095] Various exemplary embodiments included in the present disclosure are described below. [E1] a first chamber in which a stage for placing a substrate is disposed; a second chamber disposed within the first chamber and defining, together with the stage, a processing space for processing the substrate placed on the stage; The second chamber comprises: a flow space formed inside a wall that constitutes the second chamber and through which gas flows along an extension direction of the wall; a supply port communicating with the flow space for supplying the gas; an exhaust hole communicating with the flow space for discharging the gas toward at least one of the inside and the outside of the second chamber. [E2] the wall of the second chamber includes a ceiling portion facing the stage and a peripheral wall portion formed continuously with the ceiling portion and surrounding the stage; the circulation space is divided into a first circulation space formed inside the ceiling portion along the extension direction of the ceiling portion and a second circulation space formed inside the peripheral wall portion along the extension direction of the peripheral wall portion, The substrate processing apparatus according to [E1], wherein the supply port includes a first supply port communicating with the first flow space and a second supply port communicating with the second flow space. [E3] The substrate processing apparatus according to [E2], wherein different types of gases are supplied to the first supply port and the second supply port. [E4] The substrate processing apparatus according to [E1], wherein the exhaust holes include a first exhaust hole that opens toward the inside of the second chamber and a second exhaust hole that opens toward the outside of the second chamber. [E5] the peripheral wall portion is separated from the flow space by a partition wall, and has an air hole communicating between the inside and outside of the second chamber; The ventilation holes are arranged in a staggered pattern, The substrate processing apparatus according to [E2] or [E3], wherein the exhaust holes are disposed between adjacent air holes and facing inward of the second chamber. [E6] a movable part for moving the second chamber up and down within the first chamber; and a bellows connected to the movable part for separating a space within the first chamber from an outside of the first chamber, The substrate processing apparatus according to any one of [E1] to [E5], wherein the gas is supplied to the supply port through the inside of a space formed by the bellows. [Explanation of symbols]

[0096] 1...substrate processing apparatus, 10...first chamber, 20...second chamber (inner chamber), 20a...flow space, 20b...supply port, 20c...exhaust hole, 21...wall, 30...substrate support (mounting table), W...substrate.

Claims

1. a first chamber in which a stage for placing a substrate is disposed; a second chamber disposed within the first chamber and defining, together with the stage, a processing space for processing the substrate placed on the stage; a clamp releasably securing the second chamber to the first chamber; a release mechanism configured to release the clamp from securing the second chamber; The second chamber comprises: a wall body including a peripheral wall portion surrounding the mounting table; a flow space formed at least inside the peripheral wall portion and allowing gas to flow along an extending direction of the peripheral wall portion; a supply port communicating with the flow space for supplying the gas; an exhaust hole communicating with the flow space for discharging the gas toward at least one of the inside and the outside of the second chamber.

2. the wall of the second chamber further includes a ceiling portion formed continuously with the peripheral wall portion and facing the stage; the circulation space is divided into a first circulation space formed inside the ceiling portion along an extension direction of the ceiling portion and a second circulation space formed inside the peripheral wall portion along an extension direction of the peripheral wall portion, The substrate processing apparatus according to claim 1 , wherein the supply ports include a first supply port communicating with the first flow space and a second supply port communicating with the second flow space.

3. The substrate processing apparatus according to claim 2 , wherein different types of gases are supplied to the first supply port and the second supply port.

4. The substrate processing apparatus according to claim 1 , wherein the exhaust holes include a first exhaust hole that opens toward the inside of the second chamber and a second exhaust hole that opens toward the outside of the second chamber.

5. the peripheral wall portion is separated from the flow space by a partition wall, and has an air hole communicating between the inside and outside of the second chamber; The ventilation holes are arranged in a staggered pattern, The substrate processing apparatus according to claim 1 , wherein the exhaust holes are arranged between adjacent ones of the vent holes and facing inward of the second chamber.

6. a movable portion for moving the second chamber up and down within the first chamber; a lift mechanism configured to move the movable part up and down; a bellows connected to the movable part and separating a space within the first chamber from an outside of the first chamber; the second chamber is releasably secured to the movable part by the clamp; The substrate processing apparatus according to claim 1 , wherein the gas is supplied to the supply port through an inside of a space formed by the bellows.

7. 2. The substrate processing apparatus according to claim 1, wherein the wall of the second chamber further includes a ceiling portion formed continuously with the peripheral wall portion and facing the mounting table.

8. a movable portion for moving the second chamber up and down within the first chamber; a lift mechanism configured to move the movable part up and down, The substrate processing apparatus according to claim 1 , wherein the second chamber is releasably fixed to the movable portion by the clamp.

9. An inner chamber assembly provided in a chamber of a substrate processing apparatus, comprising: a wall body including a peripheral wall portion surrounding a mounting table on which a substrate is placed; a connecting member connected to a clamp that releasably secures the wall to the chamber; a flow space formed at least inside the peripheral wall portion and allowing gas to flow along an extending direction of the peripheral wall portion; a supply port communicating with the flow space for supplying the gas; an exhaust hole communicating with the flow space for discharging the gas toward at least one of the inside and outside of the wall body.

10. The inner chamber assembly according to claim 9 , wherein the wall body further includes a ceiling portion formed continuously with the peripheral wall portion and facing the mounting table.

11. The inner chamber assembly according to claim 9 , wherein the exhaust holes include a first exhaust hole that opens toward the inside of the peripheral wall portion and a second exhaust hole that opens toward the outside of the peripheral wall portion.

12. The peripheral wall portion is separated from the flow space by a partition wall, and has an air vent that communicates the inside and outside of the habit portion, The ventilation holes are arranged in a staggered pattern, The inner chamber assembly according to claim 9 , wherein the exhaust holes are disposed between adjacent air vent holes and facing inward of the peripheral wall portion.

13. the circulation space is divided into a first circulation space formed inside the ceiling portion along an extension direction of the ceiling portion and a second circulation space formed inside the peripheral wall portion along an extension direction of the peripheral wall portion, The inner chamber assembly according to claim 10 , wherein the supply ports include a first supply port communicating with the first flow space and a second supply port communicating with the second flow space.

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