Substrate Processing Equipment

Abstract

The present invention relates to a substrate processing apparatus including a chamber, a substrate support part for supporting at least one substrate inside the chamber, a first injection part for injecting a first gas from above the substrate support part toward the substrate support part, a second injection part for injecting a second gas from above the first injection part toward the substrate support part, and a buffer part formed between the first injection part and the second injection part, the first injection part including a plurality of first injection holes, the second injection part including a first supply hole for supplying the first gas to the buffer part and a second injection hole formed through the buffer part, the centers of an inlet and an outlet of the first supply hole are positioned spaced apart from each other based on a vertical direction, and the outlet is formed to face a space between the first injection holes.

Description

[Technical Field]

[0001] The present invention relates to a substrate processing apparatus for performing processing steps such as deposition and etching on a substrate. [Background technology]

[0002] Generally, a predetermined thin film layer, thin film circuit pattern, or optical pattern must be formed on a substrate to manufacture solar cells, semiconductor devices, flat panel displays, etc. To this end, processing processes are performed on the substrate, such as a deposition process to deposit a thin film of a specific material on the substrate, a photo process to selectively expose the thin film using a photosensitive material, and an etching process to remove the thin film from the selectively exposed portions to form a pattern.

[0003] A conventional substrate processing apparatus includes a substrate support unit for supporting a substrate and a gas injection unit for injecting gas toward the substrate support unit. The conventional substrate processing apparatus performs a processing process on a substrate using a first gas and a second gas that are different from each other. The first gas and the second gas are supplied into the gas injection unit, flow along separate gas flow paths formed in the gas injection unit, and then are injected from the gas injection unit.

[0004] The gas injector includes a first injector that injects gas toward the substrate support and a second injector located above the first injector. The first injector includes a plurality of first supply holes and a plurality of second supply holes. The second injector includes a plurality of first injection holes and a plurality of second injection holes. The first supply hole and the first injection hole correspond to the first gas flow path. The second supply hole and the second injection hole correspond to the second gas flow path.

[0005] The first gas is supplied at a higher flow rate and pressure to the first injection holes located vertically below the first supply holes, compared to the other first injection holes. As a result, the substrate processing apparatus according to the prior art has a problem in that deviations in the injection flow rate and injection pressure of the first gas occur between the first injection holes, resulting in a decrease in the uniformity of the processing process on the substrate. Summary of the Invention [Problem to be solved by the invention]

[0006] The present invention has been devised to solve the above-mentioned problems, and aims to provide a substrate processing apparatus capable of reducing deviations occurring in the gas flow rate and injection pressure. [Means for solving the problem]

[0007] In order to solve the above-mentioned problems, the present invention can include the following configurations.

[0008] A substrate processing apparatus according to the present invention may include a chamber, a substrate support for supporting at least one substrate within the chamber, a first injector for injecting a first gas from above the substrate support toward the substrate support, a second injector for injecting a second gas from above the first injector toward the substrate support, and a buffer formed between the first and second injectors. The first injector may include a plurality of first injector holes. The second injector may include a first supply hole for supplying the first gas to the buffer, and a second injector hole formed through the buffer. Centers of an inlet and an outlet of the first supply hole may be spaced apart from each other in the vertical direction, and the outlet may be formed to face a space between the first injector holes. [Effects of the Invention]

[0009] According to the present invention, the following effects can be obtained.

[0010] The present invention can induce the first gas to flow and diffuse through the buffer portion, thereby improving the uniformity of the flow rate and pressure of the first gas supplied to the first injection holes. Therefore, the present invention can reduce deviations in the injection flow rate and injection pressure of the first gas injected through the first injection holes, thereby contributing to improving the uniformity of the processing process for the substrate. [Brief explanation of the drawings]

[0011] [Figure 1] 1 is a schematic configuration diagram of a substrate processing apparatus according to the present invention; [Figure 2] 3 is a schematic side cross-sectional view of a gas injection unit in the substrate processing apparatus according to the present invention. [Figure 3] 3 is a schematic side cross-sectional view of a gas injection unit in the substrate processing apparatus according to the present invention. [Figure 4] 3 is a schematic side cross-sectional view of a gas injection unit in the substrate processing apparatus according to the present invention. [Figure 5] 4 is a schematic plan view of a second ejection unit in the substrate processing apparatus according to the present invention. FIG. [Figure 6] FIG. 6 is a schematic enlarged view of part A in FIG. 5. [Figure 7] FIG. 6 is a schematic enlarged view of part A in FIG. 5. [Figure 8] FIG. 6 is a schematic enlarged view of part A in FIG. 5. [Figure 9] FIG. 6 is a schematic enlarged view of part A in FIG. 5. [Figure 10] 1 is a schematic side cross-sectional view of an embodiment in which a substrate processing apparatus according to the present invention includes an electrode unit. DETAILED DESCRIPTION OF THE INVENTION

[0012] DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS Hereinafter, a substrate processing apparatus according to an embodiment of the present invention will be described in detail with reference to the accompanying drawings. In FIG. 4, the first supply holes and the second injection holes formed in the second injection part are omitted.

[0013] Referring to FIG. 1, a substrate processing apparatus 1 according to the present invention performs a processing process on a substrate (S). The substrate (S) may be a silicon substrate, a glass substrate, a metal substrate, or the like. The substrate processing apparatus 1 according to the present invention can perform a deposition process for depositing a thin film on the substrate (S), an etching process for removing a portion of the thin film deposited on the substrate (S), and the like. The following description will be based on an embodiment in which the substrate processing apparatus 1 according to the present invention performs the deposition process. However, it will be obvious to those skilled in the art to which the present invention pertains that the substrate processing apparatus 1 according to the present invention can also perform other processing processes similar to the etching process.

[0014] The substrate processing apparatus 1 according to the present invention may include a chamber 2 , a substrate support unit 3 , and a gas injection unit 4 .

[0015] <Chamber> Referring to FIG. 1, the chamber 2 provides a processing space 100. In the processing space 100, processing processes such as deposition processes and etching processes can be performed on the substrate (S). The processing space 100 can be disposed inside the chamber 2. The chamber 2 can be coupled with an exhaust port (not shown) for exhausting gas from the processing space 100. The substrate support unit 3 and the gas injection unit 4 can be disposed inside the chamber 2.

[0016] <Substrate support part> Referring to FIG. 1, the substrate support 3 supports the substrate (S). The substrate support 3 can support one substrate (S) or multiple substrates (S). When multiple substrates (S) are supported on the substrate support 3, processing steps can be performed on the multiple substrates (S) at once. The substrate support 3 can be coupled to the chamber 2. The substrate support 3 can be disposed inside the chamber 2.

[0017] <Gas injection section> Referring to FIG. 1, the gas injector 4 injects gas toward the substrate support 3. The gas injector 4 may be connected to a gas storage unit 40. In this case, the gas injector 4 may inject gas supplied from the gas storage unit 40 toward the substrate support 3. The gas injector 4 may be disposed inside the chamber 2. The gas injector 4 may be disposed facing the substrate support 3. The gas injector 4 may be disposed above the substrate support 3 based on a vertical direction (Z-axis direction). The vertical direction (Z-axis direction) is an axial direction parallel to the direction in which the gas injector 4 and the substrate support 3 are spaced apart from each other. The processing space 100 may be disposed between the gas injector 4 and the substrate support 3. The gas injector 4 may be coupled to a lid (not shown). The lid may be coupled to the chamber 2 to cover the upper part of the chamber 2.

[0018] The gas injection unit 4 may include a first gas passage 4a and a second gas passage 4b.

[0019] The first gas flow path 4a is for injecting a first gas. One side of the first gas flow path 4a may be connected to the gas storage unit 40 via a pipe, a hose, or the like. The other side of the first gas flow path 4a may be connected to the processing space 100. Thus, the first gas supplied from the gas storage unit 40 may flow along the first gas flow path 4a and then be injected into the processing space 100 through the first gas flow path 4a. The first gas flow path 4a functions as a flow path for the first gas to flow and also as an injection port for injecting the first gas into the processing space 100.

[0020] The second gas passage 4b ​​is for injecting a second gas. The second gas and the first gas may be different gases. For example, if the first gas is a reactant gas, the second gas may be a source gas. One side of the second gas passage 4b ​​may be connected to the gas storage unit 40 via a pipe, a hose, or the like. The other side of the second gas passage 4b ​​may be connected to the processing space 100. Thus, the second gas supplied from the gas storage unit 40 may flow along the second gas passage 4b ​​and then be injected into the processing space 100 through the second gas passage 4b. The second gas passage 4b ​​may function as a passage for the second gas to flow and as an injection port for injecting the second gas into the processing space 100.

[0021] The second gas passage 4b ​​and the first gas passage 4a may be arranged to be spatially separated from each other. Thus, the second gas supplied from the gas storage unit 40 to the second gas passage 4b ​​can be sprayed into the processing space 100 without passing through the first gas passage 4a. The first gas supplied from the gas storage unit 40 to the first gas passage 4a can be sprayed into the processing space 100 without passing through the second gas passage 4b. The second gas passage 4b ​​and the first gas passage 4a can spray gases toward different portions of the processing space 100.

[0022] Referring to FIGS. 1 and 2, the gas injection unit 4 may include a first injection unit 41 and a second injection unit 42.

[0023] The first injector 41 injects the first gas from above the substrate support 3 toward the substrate support 3. The first injector 41 may be disposed below the second injector 42. The first injector 41 may include a plurality of first injection holes 411.

[0024] The first injection holes 411 may be formed to penetrate the first injection part 41. The first injection holes 411 may function as a flow path for the first gas to flow and as an injection port for injecting the first gas. In this case, the first injection holes 411 may belong to the first gas flow path 4a. The first gas may flow through the first injection holes 411 and be injected toward the substrate (S). The first injection holes 411 may be formed to penetrate the first injection part 41 at positions spaced apart from each other.

[0025] The second injector 42 injects the second gas from above the first injector 41 toward the substrate support 3. The second injector 42 may be disposed above the first injector 41. The second injector 42 may also supply the first gas to the buffer unit 43. The buffer unit 43 is formed between the first injector 41 and the second injector 42. The first gas supplied from the second injector 42 to the buffer unit 43 may be injected toward the substrate support 3 through the first injection holes 411.

[0026] The second injection part 42 may include a first supply hole 421 and a second injection hole 422 .

[0027] The first supply hole 421 supplies the first gas to the buffer unit 43. The first supply hole 421 may be formed to penetrate the second injection unit 42. The first supply hole 421 may function as a flow path for the first gas. In this case, the first supply hole 421 may belong to the first gas flow path 4a. The first supply hole 421, the buffer unit 43, and the first injection hole 411 may belong to the first gas flow path 4a. The second injection unit 42 may include a plurality of the first supply holes 421. The first supply holes 421 may be formed to penetrate the second injection unit 42 at positions spaced apart from each other. The first supply hole 421 may be connected to the gas storage unit 40. The second injection unit 42 may include a plurality of the first supply holes 421. The first supply holes 421 may be formed to penetrate the second injection unit 42 at positions spaced apart from each other.

[0028] The second injection holes 422 are for injecting the second gas. The second injection holes 422 may be formed to penetrate the buffer portion 43. The second injection holes 422 may function as a flow path for the second gas to flow and as an injection port for injecting the second gas. In this case, the second injection holes 422 may belong to the second gas flow path 4b.

[0029] The second injection hole 422 may be formed to penetrate both the injection body 423 and the connecting portion 424 of the second injection part 42. The injection body 423 is disposed spaced apart above the first injection part 41. The first supply hole 421 may be formed in the injection body 423. The connecting portion 424 protrudes from the injection body 423. One side of the connecting portion 424 may protrude from the lower surface of the injection body 423, and the other side may be inserted into the first injection part 41. The other side of the connecting portion 424 and the first injection part 41 may be sealed. One side of the connecting portion 424 may be disposed in the buffer part 43. As a result, the buffer part 43 can spatially separate the internal space of the connecting portion 424 from the external space of the connecting portion 424. Therefore, the second injection part 42 can partition the buffer part 43 using the connection part 424 so that the first gas passage 4a and the second gas passage 4b ​​are spatially separated from each other.

[0030] The first gas passage 4a may be implemented using an external space of the connecting portion 424 in the buffer portion 43. In this case, the buffer portion 43 belonging to the first gas passage 4a may have a buffer function for diffusing the first gas. The first gas may be sprayed toward the substrate support portion 3 by sequentially passing through the first supply hole 421, the buffer portion 43, and the first spray hole 411.

[0031] The second gas passage 4b ​​may be implemented using an internal space of the connection portion 424 in the buffer portion 43. In this case, the internal space of the connection portion 424 may correspond to a part of the second injection holes 422. The second gas may be injected toward the substrate support portion 3 by passing through the second injection holes 422.

[0032] The second injection part 42 may include a plurality of the second injection holes 422. The second injection holes 422 may be formed to penetrate the second injection part 42 at positions spaced apart from each other. In this case, the second injection part 42 may include a plurality of the connecting parts 424. The second injection holes 422 may be formed to penetrate each of the connecting parts 424.

[0033] Here, when the first supply hole 421 and the first injection holes 411 are formed to extend parallel to the vertical direction (Z-axis direction), the first gas can be supplied at a higher flow rate and pressure through the first injection hole 411 arranged opposite the first supply hole 421 compared to the other first injection holes 411. This is because the first gas supplied from the first supply hole 421 is injected toward the first injection hole 411 arranged opposite the first supply hole 421. As a result, deviations in the injection flow rate and injection pressure of the first gas occur between the first injection holes 411, which may reduce the uniformity of the processing process on the substrate (S). To prevent this, the gas injection unit 4 in the substrate processing apparatus 1 according to the present invention may be embodied as follows.

[0034] As shown in FIG. 2, the first supply hole 421 may include an inlet 421a and an outlet 421b. The inlet 421a may penetrate an upper surface of the second injection unit 42. The outlet 421b may penetrate a lower surface of the second injection unit 42. The center of the inlet 421a and the center of the outlet 421b may be spaced apart from each other in the vertical direction (Z-axis direction). That is, the center of the inlet 421a and the center of the outlet 421b may be offset from each other. This allows the first gas injected from the outlet 421b to be injected into the spaces between the first injection holes 411. In this case, the first supply hole 421 may inject the first gas toward the upper surface of the first injection unit 41 located between the first injection holes 411.

[0035] Therefore, the substrate processing apparatus 1 according to the present invention can improve the uniformity of the flow rate and pressure of the first gas supplied to the first injection holes 411 by guiding the first gas injected from the first supply holes 421 to flow along the upper surface of the first injection part 41 and diffuse in the buffer part 43. Therefore, the substrate processing apparatus 1 according to the present invention can reduce deviations in the injection flow rate and injection pressure of the first gas injected through the first injection holes 411, thereby contributing to improving the uniformity of the processing process for the substrates (S).

[0036] When the center of the inlet 421a and the center of the outlet 421b are arranged to be offset from each other, the connecting portion 424 can be arranged at a position separated from the flow path (indicated by the dashed arrow in FIG. 2) of the first gas injected from the first supply holes 421. This prevents the first gas injected from the first supply holes 421 from hitting the connecting portion 424 and generating a vortex, which can lead to stagnation. Therefore, the substrate processing apparatus 1 according to the present invention can further improve the diffusibility of the first gas injected from the first supply holes 421.

[0037] The first supply hole 421 may include a ramp 4211 .

[0038] The inclined path 4211 is located between the inlet 421a and the outlet 421b. The inclined path 4211 may be formed obliquely between the inlet 421a and the outlet 421b. In this case, the inclined path 4211 may be formed to be inclined in a direction away from the inlet 421a as it extends downward. The inclined path 4211 may allow the center of the inlet 421a and the center of the outlet 421b of the first supply hole 421 to be offset from each other. The inclined path 4211 may be formed to be inclined at a predetermined angle with respect to the vertical direction (Z-axis direction). The inclined path 4211 may be connected to the outlet 421b. The inclined path 4211 allows the first gas injected from the outlet 421b to contact the upper surface of the first injection part 41 at an angle inclined with respect to a plane formed by the upper surface of the first injection part 41. Therefore, the substrate processing apparatus 1 according to the present invention can further improve the diffusibility of the first gas by guiding the first gas to be smoothly diffused in the buffer unit 43. The inclined path 4211 can be connected to each of the outlet 421b and the inlet 421a.

[0039] As shown in FIG. 3, the first supply hole 421 may have a plurality of ramps 4211. The ramps 4211 may extend in different directions. Therefore, the substrate processing apparatus 1 according to the present invention can further diffuse the first gas by spraying the first gas in different directions using the ramps 4211. Therefore, the substrate processing apparatus 1 according to the present invention can further improve the uniformity of the processing process using the first gas by further improving the diffusibility of the first gas. For example, the first supply hole 421 may include a first ramp 4211a and a second ramp 4211b. The first ramp 4211a and the second ramp 4211b may be formed to be inclined in different directions. While FIG. 3 illustrates the first supply hole 421 as including two ramps 4211, the present invention is not limited thereto, and the first supply hole 421 may include three or more ramps 4211.

[0040] As shown in FIG. 4, the first supply hole 421 may include a vertical passage 4212 .

[0041] The vertical path 4212 extends perpendicularly from the inlet 421a (shown in FIG. 2) in the vertical direction (Z-axis direction). The vertical path 4212 may be connected to the inlet 421a (shown in FIG. 2). In this case, the inclined path 4211 may be connected to each of the vertical path 4212 and the outlet 421b (shown in FIG. 2). The vertical path 4212 may be formed to extend linearly downward based on the center of the inlet 421a (shown in FIG. 2). That is, the vertical paths 4212 may be formed parallel to the vertical direction (Z-axis direction). In this case, the inclined path 4211 may be formed to be inclined in a direction away from the vertical path 4212 as it extends downward from the vertical path 4212.

[0042] 1 to 5, in the substrate processing apparatus 1 according to the present invention, the first supply holes 421 may be arranged in a central area (CA, shown in FIG. 5). The central area (CA) is an area having a predetermined area in the first axis direction (X-axis direction) and the second axis direction (Y-axis direction) from the center of the second injection unit 42. The first axis direction (X-axis direction) and the second axis direction (Y-axis direction) are perpendicular to the vertical direction (Z-axis direction) and orthogonal to each other. The central area (CA) may be arranged inside an outer area (OA, shown in FIG. 5). The outer area (OA) may be arranged outside the central area (CA) to surround the central area (CA). In this case, the second injection holes 422 may be arranged in both the central area (CA) and the outer area (OA). Although not shown, the first supply holes 421 may be arranged in the outer area (OA).

[0043] Here, the direction in which the inclined path 4211 is formed and extends can be determined depending on the position of the first supply hole 421 in the second injection part 42. In this case, the inclined path 4211 can be formed to extend in a direction in which the first gas injected through the first supply hole 421 can be uniformly diffused in the buffer part 43 (shown in FIG. 2).

[0044] 6, the inclined paths 4211a and 4211b of each of the first supply holes 421 may be formed to extend in opposite directions, thereby improving the uniformity of the flow rate and pressure of the first gas injected in opposite directions from the first supply holes 421 using the inclined paths 4211a and 4211b.

[0045] For example, as shown in FIG. 7, the inclined paths 4211a, 4211b, and 4211c of each of the first supply holes 421 may extend in directions that form an equal included angle (IA) with each other. For example, the inclined paths 4211a, 4211b, and 4211c may extend in directions that form an included angle (IA) of 120 degrees. This may improve the uniformity of the flow rate and pressure of the first gas injected in different directions from each other from each of the first supply holes 421. FIG. 7 illustrates an embodiment in which three inclined paths 4211a, 4211b, and 4211c extend in directions that form an equal included angle (IA) with each other. However, the present invention is not limited to this, and two or four or more inclined paths 4211 (shown in FIG. 4) may extend in directions that form an equal included angle (IA) with each other. 8, the inclined paths 4211a and 4211b may be formed to extend in directions that form an included angle (IA) of 90 degrees. In this case, the inclined paths 4211a and 4211b of the first supply hole 421 may be formed to extend in directions perpendicular to each other.

[0046] 8, the inclined paths 4211a and 4211b of each of the first supply holes 421 may be formed to extend in different directions except for the direction toward the adjacent first supply hole 421. In this case, the inclined path 4211 of the first supply hole 421 (shown in FIG. 4) and the inclined path 4211 of the adjacent first supply hole 421 (shown in FIG. 4) may be formed to extend in different directions. As a result, the first supply holes 421 can inject the first gas in different directions using the inclined paths 4211a and 4211b. Therefore, the substrate processing apparatus 1 according to the present invention can further diffuse the first gas outside the region where the first supply holes 421 are located, thereby further improving the uniformity of the flow rate and pressure of the first gas.

[0047] 9, among the ramps 4211 of each of the first supply holes 421, the first ramp 4211a may be formed to extend in a direction toward the adjacent first supply hole 421, and the second ramp 4211b may be formed to extend in a direction other than the direction toward the adjacent first supply hole 421. As a result, the substrate processing apparatus 1 according to the present invention may be embodied to further diffuse the first gas outside the area where the first supply hole 421 is located, as well as further diffuse the first gas within the area where the first supply hole 421 is located. In this case, the ramp 4211 (shown in FIG. 4) of the first supply hole 421 may be formed to extend in a direction different from at least one of the ramps 4211 (shown in FIG. 4) of the adjacent first supply holes 421.

[0048] 10, in the substrate processing apparatus 1 according to the present invention, the first injector 41 or the second injector 42 may be connected to an RF (Radio Frequency) power source (not shown). In this case, when the first injector 41 is grounded and RF power is applied to the second injector 42, plasma can be generated. Thus, the gas injector 4 can activate at least one of the first gas and the second gas using the plasma and inject the gas into the processing space 100. The second injector 42 can be grounded and RF power can be applied to the first injector 41.

[0049] The first injection part 41 may include a plurality of openings 412. The openings 412 may be formed at different positions through the first injection part 41. In this case, a portion of the first injection part 41 may be inserted into each of the openings 412. The connecting part 424 of the first injection part 41 may be inserted into each of the openings 412. Although FIG. 10 illustrates the lower surface of the connecting part 424 being positioned higher than the lower surface of the first injection part 41, the present invention is not limited thereto, and the lower surface of the connecting part 424 and the lower surface of the first injection part 41 may be implemented at the same height. The lower surface of the connecting part 424 may also be positioned lower than the lower surface of the first injection part 41. In this case, the connecting part 424 may protrude downward from the first injection part 41.

[0050] When the opening 412 is provided, the first gas can be supplied to the buffer part 43 through the first supply hole 421, and then diffused from the buffer part 43 and sprayed toward the substrate support part 3 through each of the first injection hole 411 and the opening 412.

[0051] The present invention described above is not limited to the above-described embodiments and accompanying drawings, and it will be apparent to those skilled in the art to which the present invention pertains that various substitutions, modifications, and changes can be made without departing from the technical spirit of the present invention.

Claims

1. Chamber, a substrate support for supporting at least one substrate within the chamber; a first injector that injects a first gas from above the substrate support toward the substrate support; a second injector configured to inject a second gas from above the first injector toward the substrate support; and a buffer portion formed between the first injection portion and the second injection portion, the first injection section includes a plurality of first injection holes, the second injection unit includes a first supply hole including an inlet and an outlet, for supplying the first gas to the buffer unit, and a second injection hole formed through the buffer unit; the first gas injected from the outlet contacts the upper surface of the first injection part at an angle inclined with respect to a plane formed by the upper surface of the first injection part, The substrate processing apparatus is characterized in that the discharge port is formed so as to face a space between the first injection holes.

2. the first feed hole includes a ramp located between the inlet and the outlet; The substrate processing apparatus according to claim 1 , wherein the ramp is formed obliquely between the inlet and the outlet.

3. The substrate processing apparatus of claim 2 , wherein the first supply hole further includes a vertical passage extending vertically from the inlet.

4. The ramps of the first supply holes are formed in a plurality of pieces, 4. The substrate processing apparatus according to claim 2, wherein the inclined paths are formed so as to extend in different directions.

5. The substrate processing apparatus according to claim 4 , wherein the inclined paths of the first supply holes are formed to extend in opposite directions to each other.

6. The substrate processing apparatus according to claim 4 , wherein the inclined paths of the first supply holes are formed so as to extend in directions perpendicular to each other.

7. The first supply holes are formed in plural numbers, The substrate processing apparatus of claim 4 , wherein the inclined path of the first supply hole is formed to extend in a direction different from at least one of the inclined paths of the adjacent first supply holes.

8. The first supply holes are formed in plural numbers, 4. The substrate processing apparatus of claim 2, wherein the inclined path of the first supply hole and the inclined path of the adjacent first supply hole are formed to extend in different directions.

9. 2. The substrate processing apparatus of claim 1, wherein the first injector or the second injector is connected to an RF power source.

10. The substrate processing apparatus of claim 1 , wherein centers of the inlet and outlet of the first supply hole are spaced apart from each other in a vertical direction.

Images