Flow path structure and semiconductor manufacturing device

Abstract

This flow path structure is provided with a substrate, a flow path, a plurality of openings, a first metal wire, and a second metal wire. The substrate has a first surface and is composed of ceramics. The flow path is positioned inside the substrate and includes a plurality of branch paths. The plurality of openings are positioned on the first surface and are respectively coupled with the plurality of branch paths. The first metal wire is at least partly positioned inside the substrate, and is composed of a first metal. The second metal wire is at least partly positioned inside the substrate, and is composed of a second metal different from the first metal. Further, the first metal wire and the second metal wire are connected inside the substrate, and form a thermocouple portion having a thermocouple function. In a frontal view of the first surface, the first metal wire and the second metal wire surround the periphery of the openings, and the thermocouple portion is positioned around the openings.

Description

[Technical Field]

[0001] The disclosed embodiments relate to a flow path structure and a semiconductor manufacturing apparatus. [Background technology]

[0002] A technology has been disclosed for semiconductor manufacturing equipment in which processes are performed while estimating various process data based on data acquired using multiple types of sensors. For example, Patent Document 1 describes a technique in which a semiconductor wafer is placed on a stage equipped with a temperature sensor S1 as an example of a sensor, and temperature data in the vicinity of the semiconductor wafer is acquired. It also describes a technique in which a temperature sensor S2 is placed on the back surface of a shower plate. [Prior art documents] [Patent documents]

[0003] [Patent Document 1] International Publication No. 2021 / 157453 Summary of the Invention

[0004] The flow path structure of the present disclosure includes a base, a flow path, a plurality of openings, a first metal wiring, and a second metal wiring. The base has a first surface and is made of ceramic. The flow path is located inside the base and has a plurality of branch paths. The plurality of openings are located on the first surface and are respectively connected to the plurality of branch paths. At least a portion of the first metal wiring is located inside the base and is made of a first metal. At least a portion of the second metal wiring is located inside the base and is made of a second metal different from the first metal. Furthermore, the first metal wiring and the second metal wiring are connected inside the base and form a thermocouple unit having thermocouple function. When the first surface is viewed from the front, the first metal wiring and the second metal wiring surround the periphery of the opening, and the thermocouple unit is located around the periphery of the opening. [Brief explanation of the drawings]

[0005] [Figure 1] FIG. 1 is a cross-sectional view showing an example of the configuration of a semiconductor manufacturing apparatus according to an embodiment. [Figure 2] FIG. 2 is a perspective view showing an example of the configuration of the flow path structure according to the embodiment. [Figure 3] FIG. 3 is a front view showing an example of the configuration of the flow path structure according to the embodiment. [Figure 4] FIG. 4 is a cross-sectional view taken along line AA in FIG. [Figure 5] FIG. 5 is a front view showing an example of the configuration of the thermocouple unit according to the embodiment. [Figure 6] FIG. 6 is a cross-sectional view showing an example of the configuration of a thermocouple unit according to an embodiment. [Figure 7] FIG. 7 is a cross-sectional view showing an example of the configuration of a thermocouple unit according to the embodiment. [Figure 8] FIG. 8 is a cross-sectional view showing an example of the configuration of a thermocouple unit according to an embodiment. [Figure 9] FIG. 9 is a front view showing another example of the configuration of the thermocouple section according to the embodiment. [Figure 10] FIG. 10 is a cross-sectional view showing another example of the configuration of the thermocouple unit according to the embodiment. [Figure 11] FIG. 11 is a cross-sectional view showing another example of the configuration of the thermocouple section according to the embodiment. [Figure 12] FIG. 12 is a front view showing an example of the configuration of a flow path structure according to the first modification of the embodiment. [Figure 13] FIG. 13 is a cross-sectional view showing an example of the configuration of a flow path structure according to the second modification of the embodiment. [Figure 14] FIG. 14 is a front view showing an example of the configuration of a flow path structure according to the third modification of the embodiment. [Figure 15] FIG. 15 is a front view showing an example of the configuration of a flow path structure according to the third modification of the embodiment. [Figure 16] FIG. 16 is a front view showing an example of the configuration of a flow path structure according to the fourth modification of the embodiment. [Figure 17]FIG. 17 is an enlarged cross-sectional view showing an example of the configuration of a flow path structure according to a fifth modification of the embodiment. [Figure 18] FIG. 18 is an enlarged cross-sectional view showing an example of the configuration of a flow path structure according to a sixth modification of the embodiment. DETAILED DESCRIPTION OF THE INVENTION

[0006] Hereinafter, embodiments of a flow path structure and a semiconductor manufacturing apparatus disclosed in the present application will be described with reference to the accompanying drawings. However, the present disclosure is not limited to the embodiments described below.

[0007] Furthermore, in the following embodiments, expressions such as "constant," "orthogonal," "perpendicular," or "parallel" may be used, but these expressions do not necessarily mean "constant," "orthogonal," "perpendicular," or "parallel" in the strict sense. In other words, the above expressions allow for deviations due to, for example, manufacturing precision, installation precision, etc.

[0008] A technology has been disclosed in which a temperature sensor is used to acquire temperature data within a semiconductor manufacturing device, and various process data is estimated while the device is being processed.

[0009] However, in the above-mentioned conventional technology, since only temperature data on the back side of the shower plate, which is a flow path structure, can be obtained, there is room for further improvement. For example, if a temperature sensor is placed on the shower plate closer to the semiconductor wafer, temperature data closer to the position where the process is occurring can be obtained.

[0010] <Semiconductor manufacturing equipment> First, the configuration of a semiconductor manufacturing apparatus 100 according to an embodiment will be described with reference to Fig. 1. Fig. 1 is a cross-sectional view showing an example of the configuration of a semiconductor manufacturing apparatus 100 according to an embodiment.

[0011] The semiconductor manufacturing apparatus 100 according to the embodiment is, for example, a plasma processing apparatus that uses plasma to process a semiconductor wafer W. Examples of such a semiconductor manufacturing apparatus 100 include a CVD (Chemical Vapor Deposition) apparatus and a dry etching apparatus.

[0012] The semiconductor manufacturing apparatus 100 according to the embodiment includes a flow channel structure 1, a chamber 110, a mounting table 120, and a shaft 130. The chamber 110 accommodates the flow channel structure 1, at least a portion of the mounting table 120, and at least a portion of the shaft 130.

[0013] The inside of the chamber 110 can be evacuated or decompressed by an exhaust unit (not shown) etc. An opening 111 for loading and unloading the semiconductor wafer W is located on the side of the chamber 110.

[0014] The mounting table 120 is located below the flow path structure 1 within the chamber 110. The mounting table 120 supports the semiconductor wafer W on the surface facing the flow path structure 1, in this case, on the upper surface of the mounting table 120.

[0015] The shaft 130 supports the flow path structure 1 inside the chamber 110 and introduces a medium such as a process gas into the flow path structure 1. A through hole 131 is formed inside the shaft 130, and the through hole 131 is connected to the opening 3 (see FIG. 2) of the flow path structure 1. The mounting table 120 and the shaft 130 may be made of ceramics. For example, aluminum oxide or aluminum nitride may be used as the ceramics.

[0016] In the semiconductor manufacturing apparatus 100, a process gas used in plasma processing is guided from the through-hole 131 of the shaft 130 through the flow path 4 (see FIG. 4) of the flow path structure 1 and from the plurality of openings 5 ​​(see FIG. 3) into the chamber 110. That is, the flow path structure 1 according to the embodiment functions as, for example, a shower plate in the semiconductor manufacturing apparatus 100.

[0017] <Flow path structure> Next, the configuration of the flow channel structure 1 according to the embodiment will be described with reference to Fig. 2 to Fig. 4. Fig. 2 is a perspective view showing an example of the configuration of the flow channel structure 1 according to the embodiment, and Fig. 3 is a front view showing an example of the configuration of the flow channel structure 1 according to the embodiment. Fig. 4 is a cross-sectional view taken along line AA in Fig. 3.

[0018] As shown in FIGS. 2 to 4, the flow path structure 1 according to the embodiment includes a substrate 2, and an opening 3, a flow path 4, and a plurality of openings 5 ​​formed in the substrate 2.

[0019] As shown in Fig. 2, the base 2 is, for example, disk-shaped and has a first surface 2a and a second surface 2b. In Fig. 2, the lower surface is the first surface 2a and the upper surface is the second surface 2b. Note that, although the present disclosure shows an example in which the base 2 has a disk-like shape, the shape of the base 2 is not limited to a disk-like shape and may have any shape.

[0020] 4, the opening 3 is located on the second surface 2b of the base 2, and the plurality of openings 5 ​​are located on the first surface 2a of the base 2. The opening 3 and the plurality of openings 5 ​​are connected by a flow path 4.

[0021] For example, the opening 3 is located in the center of the second surface 2b of the base 2, as shown in Fig. 2. Alternatively, the openings 5 ​​may be located so as to be evenly distributed over the entire first surface 2a of the base 2, as shown in Fig. 3.

[0022] Although the present disclosure has shown an example in which one opening 3, which is an inlet for a medium such as a process gas, is provided and multiple openings 5, which are outlets for the medium, the present disclosure is not limited to this example. For example, multiple openings 3 may be provided, or one opening 5 may be provided.

[0023] 4, the flow path 4 has, in order from the side connected to the opening 3, an introduction path 4a, a widening path 4b, and a plurality of branch paths 4c. The introduction path 4a is, for example, a portion that extends from the opening 3 perpendicular to the second surface 2b.

[0024] The widened path 4b is, for example, a portion extending parallel to the first surface 2a from the end of the introduction path 4a on the first surface 2a side. The multiple branch paths 4c are, for example, portions extending from the widened path 4b toward the multiple openings 5. Note that the configuration of the flow path 4 in the present disclosure is not limited to the example in FIG. 4.

[0025] The base 2 according to the embodiment may be made of any material, such as resin, metal, ceramic, etc. On the other hand, when the base 2 is made of ceramic, it is superior to resin or metal in terms of mechanical strength, heat resistance, corrosion resistance, etc.

[0026] Here, ceramics include aluminum oxide ceramics, zirconium oxide ceramics, yttrium oxide ceramics, magnesium oxide ceramics, silicon nitride ceramics, aluminum nitride ceramics, silicon carbide ceramics, cordierite ceramics, and mullite ceramics.

[0027] For example, aluminum oxide ceramics are ceramics that contain 70 mass % or more of aluminum oxide out of 100 mass % of all components that make up the ceramics. The same applies to other ceramics.

[0028] The material of the target substrate can be confirmed by the following method. First, the target substrate is measured using an X-ray diffractometer (XRD), and the obtained value of 2θ, the diffraction angle, is compared with the JCPDS card. Here, we will explain an example in which the presence of aluminum oxide in the target substrate is confirmed by XRD.

[0029] Next, quantitative analysis of aluminum (Al) is performed using an ICP optical emission spectrometer (ICP) or an X-ray fluorescence spectrometer (XRF). If the content of Al measured by ICP or XRF is converted to aluminum oxide (Al2O3) and is 70 mass% or more, the target substrate is composed of aluminum oxide ceramics.

[0030] When the flow path structure 1 of the present disclosure has a plurality of openings 5 ​​and the base 2 is made of ceramic, it can be suitably used as a shower plate used in a semiconductor manufacturing apparatus 100 (see FIG. 1) that requires corrosion resistance. Furthermore, the flow path structure 1 according to the embodiment causes little deterioration in the quality of the inflow gas, and therefore the quality of the processed object is high.

[0031] 3, in the embodiment, a plurality of thermocouple sections 10, two in the figure, are located inside the base 2. Each thermocouple section 10 is configured by connecting a first metal wiring 11 (see FIG. 5) made of a first metal with a second metal wiring 12 (see FIG. 5) made of a second metal different from the first metal, and has a thermocouple function.

[0032] In the embodiment, a plurality of temperature measurement points can be provided in the shower plate by positioning a plurality of thermocouple units 10 inside the base 2. This makes it possible to measure the temperature inside the shower plate as well as the temperature distribution inside the shower plate.

[0033] In the embodiment, the plurality of thermocouple portions 10 are located at positions that are different distances from the center of the first surface 2a, as shown in Fig. 3. For example, in the example of Fig. 3, one thermocouple portion 10 is located at the center of the first surface 2a, and another thermocouple portion 10 is located at an end portion of the first surface 2a.

[0034] This makes it possible to measure the temperature distribution according to the spread of the medium discharged from the flow path structure 1.

[0035] In addition, in the embodiment, the plurality of thermocouple units 10 may be located at positions that are different distances from the opening 111 (see FIG. 1) of the chamber 110 (see FIG. 1). For example, in the embodiment, the thermocouple units 10 may be located at a portion of the base 2 that is closer to the opening 111 and at a portion of the base 2 that is farther from the opening 111.

[0036] This makes it possible to measure both the temperature near the opening 111, where the temperature drops easily, and the temperature of a portion away from the opening 111, where the temperature drops less easily. Therefore, according to the embodiment, the temperature distribution inside the chamber 110 can be measured with high accuracy.

[0037] In the example of FIG. 4, the widening path 4b is disk-shaped, but the present disclosure is not limited to this example, and a support pillar may be provided inside the widening path 4b.

[0038] <Thermocouple section> Next, the configuration of the thermocouple section 10 according to the embodiment will be described with reference to Fig. 5 to Fig. 11. Fig. 5 is a front view showing an example of the configuration of the thermocouple section 10 according to the embodiment, and Fig. 6 is a cross-sectional view showing an example of the configuration of the thermocouple section 10 according to the embodiment. Fig. 6 is a cross-sectional view taken along line BB in Fig. 5.

[0039] As shown in FIG. 5, the thermocouple section 10 is formed at a location where a first metal wiring 11 made of a first metal and a second metal wiring 12 made of a second metal are in contact with each other.

[0040] The first metal and the second metal may contain, for example, W (tungsten) and Re (rhenium), and may be configured so that the ratios of W and Re are different from each other, thereby generating an electromotive force due to the Seebeck effect at the contacting portion of the first metal wiring 11 and the second metal wiring 12.

[0041] Although this alloy is not specified by industrial standards such as JIS as a material for forming the thermocouple portion 10, it has a melting point of 3000°C or higher, so it can be fired simultaneously with the ceramics that make up the base 2, and because it has a large electromotive force, it can be used directly with commercially available instruments used to measure the temperature of thermocouples.

[0042] Specifically, the first metal wiring 11 may be formed from an alloy having a volume ratio of W:Re=94:6 to 97:3, and the second metal wiring 12 may be formed from an alloy having a volume ratio of W:Re=73:27 to 76:24. By setting the volume ratio of W to Re in the W-Re alloy constituting the first metal wiring 11 and the second metal wiring 12 within the above range, highly accurate measurements can be easily achieved.

[0043] In the present disclosure, the material of the first metal wiring 11 and the second metal wiring 12 is not limited to an alloy containing W and Re, but may also be an alloy containing Pt (platinum) and Rh (rhodium), an alloy containing Ni (nickel) and Cr (chromium), or an alloy specified by JIS C1602.

[0044] In the present disclosure, the material of the first metal wiring 11 and the second metal wiring 12 may be an alloy that has a large electromotive force from the viewpoint of improving measurement accuracy, has different temperature coefficients of resistance, has a high melting point that can withstand the firing temperature of the ceramic that constitutes the base 2, and can be used in commercially available instruments.

[0045] The manufacturing process for the substrate 2 including the first metal wiring 11 and the second metal wiring 12 begins with preparing a tape made of ceramics and containing a binder. If necessary, the shape may be processed using a tool, mold, or laser.

[0046] Next, a conductive paste that will become the first metal wiring 11 and the second metal wiring 12 is printed and filled onto the tape. After drying, the tapes are laminated, and then degreased and fired under conditions according to the material of the tapes, thereby obtaining the flow path structure 1.

[0047] In the embodiment, by using such a tape lamination method, the thermocouple part 10 can be easily formed inside the base 2. Also, in the embodiment, by forming the thermocouple part 10 inside the base 2 with a printed conductive paste, calibration of the thermocouple part 10 can be made unnecessary even after long-term use.

[0048] As shown in Fig. 5, the first metal wiring 11 may have an enclosing portion 11a, a wiring portion 11b, and a via portion 11c (see Fig. 14). In the example of Fig. 5, the enclosing portion 11a is positioned so as to surround the branch path 4c. For example, as shown in Figs. 5 and 6, the enclosing portion 11a may surround the entire periphery of the branch path 4c without any breaks.

[0049] The wiring portion 11b is positioned so as to extend parallel to the first surface 2a (see FIG. 6) of the base 2. The via portion 11c is positioned so as to extend perpendicular to the first surface 2a of the base 2.

[0050] The second metal wiring 12 has an enclosing portion 12a, a wiring portion 12b, and a via portion 12c (see FIG. 14). The enclosing portion 12a is positioned so as to surround the branch path 4c. The wiring portion 12b is positioned so as to extend parallel to the first surface 2a of the base 2.

[0051] 6, the wiring portion 12b is positioned so as to ride over the surrounding portion 11a of the first metal wiring 11. The via portion 12c is positioned so as to extend perpendicular to the first surface 2a of the base 2.

[0052] The surrounding portions 11a and 12a are positioned so as to concentrically surround the outside of the branch path 4c. The surrounding portions 11a and 12a are positioned so as to contact each other. This forms a circular thermocouple portion 10 at the contact point between the surrounding portions 11a and 12a.

[0053] As described above, in the embodiment, when the first surface 2a is viewed from the front, as shown in FIG. 5, the first metal wiring 11 and the second metal wiring 12 surround the periphery of the opening 5, and the thermocouple portion 10 is located around the periphery of the opening 5.

[0054] This allows the temperatures of the branch path 4c and the opening 5 through which the process gas is discharged to be measured with high accuracy.

[0055] In the embodiment, when the first surface 2a is viewed from the front, the thermocouple unit 10 may surround the opening 5. This allows the temperature in the vicinity of the branch path 4c through which the process gas is discharged and the opening 5 to be measured with even greater accuracy.

[0056] In addition, in the embodiment, the cross-sectional shape of the thermocouple section 10 shown in Fig. 5 is not limited to the example in Fig. 6. Figs. 7 and 8 are cross-sectional views showing an example of the configuration of the thermocouple section 10 according to the embodiment, and correspond to the above-mentioned Fig. 6. As shown in Fig. 7, in the embodiment, a portion of the surrounding portion 11a of the first metal wiring 11 may be cut out so as to be separated by the wiring portion 12b of the second metal wiring 12.

[0057] 8, the first metal wiring 11 and the second metal wiring 12 may be positioned so as to be stacked inside the base 2. Then, the thermocouple part 10 may be formed by stacking the second metal wiring 12 with the surrounding part 12a of the second metal wiring 12 in contact with the surrounding part 11a of the first metal wiring 11.

[0058] In this way, when the first surface 2a is viewed from the front, the first metal wiring 11 and the second metal wiring 12 are positioned overlapping in the thermocouple portion 10, thereby increasing the contact area between the surrounding portion 11a and the surrounding portion 12a.

[0059] Therefore, the temperature in the vicinity of the branch path 4c and the opening 5 through which the process gas is discharged can be measured with even greater accuracy.

[0060] In addition, in the embodiment, the planar shape of the thermocouple section 10 is not limited to the example in Fig. 5. Fig. 9 is a front view showing another example of the configuration of the thermocouple section 10 according to the embodiment, and Fig. 10 is a cross-sectional view showing another example of the configuration of the thermocouple section 10 according to the embodiment. Fig. 10 is a cross-sectional view taken along the line CC shown in Fig. 9.

[0061] As shown in Figures 9 and 10, in an embodiment, the semicircular surrounding portion 11a and the semicircular surrounding portion 12a may be connected to each other to form a circle, so that the first metal wiring 11 and the second metal wiring 12 are positioned so as to surround the periphery of the opening 5 as a whole.

[0062] This also makes it possible to measure the temperature in the vicinity of the branch path 4c and the opening 5 through which the process gas is discharged with high accuracy.

[0063] In the present disclosure, as shown in FIG. 9, even if the thermocouple sections 10 are located apart at the contact points between the first metal wiring 11 and the second metal wiring 12, they can be regarded as one thermocouple section 10 if they are located at a distance of 1 cm or less and connected to the same first metal wiring 11 and second metal wiring 12.

[0064] Furthermore, in the embodiment, the cross-sectional shape of the thermocouple section 10 shown in Fig. 9 is not limited to the example of Fig. 10. Fig. 11 is a cross-sectional view showing another example of the configuration of the thermocouple section 10 according to the embodiment.

[0065] 11 , in an embodiment, the first metal wiring 11 and the second metal wiring 12 may be positioned so as to be stacked inside the base 2. Then, the second metal wiring 12 may be stacked while the surrounding portion 12a of the second metal wiring 12 is in contact with the surrounding portion 11a of the first metal wiring 11, thereby forming the thermocouple portion 10.

[0066] In this way, when the first surface 2a is viewed from the front, the first metal wiring 11 and the second metal wiring 12 are positioned overlapping in the thermocouple portion 10, thereby increasing the contact area between the surrounding portion 11a and the surrounding portion 12a.

[0067] Therefore, the temperature in the vicinity of the branch path 4c and the opening 5 through which the process gas is discharged can be measured with even greater accuracy.

[0068] In addition, in the embodiment, the thermocouple portion 10 may have a region including the first metal and the second metal. That is, in the embodiment, the thermocouple portion 10 may have a region in which the first metal and the second metal are mixed. This can improve the reliability of the thermocouple portion 10.

[0069] <Variation 1> Next, various modified examples of the embodiment will be described with reference to Fig. 12 to Fig. 18. Fig. 12 is a front view showing an example of the configuration of a flow path structure 1 according to modified example 1 of the embodiment, and corresponds to Fig. 3 of the embodiment.

[0070] 12, in Modification 1, three or more thermocouple portions 10, three in the figure, may be located inside the base 2. For example, in Modification 1, one thermocouple portion 10 is located at the center of the first surface 2a, another thermocouple portion 10 is located at an end portion of the first surface 2a, and yet another thermocouple portion 10 is located midway between the center and the end portion of the first surface 2a.

[0071] This makes it possible to measure the temperature distribution according to the spread of the medium discharged from the flow path structure 1 with high accuracy.

[0072] Furthermore, in Modification 1, three or more thermocouple sections 10 may be arranged in a straight line, which makes it possible to grasp the temperature trend inside the chamber 110.

[0073] In the example of FIG. 12, an example in which three thermocouple sections 10 are located inside the base 2 is shown, but the present disclosure is not limited to such an example, and four or more thermocouple sections 10 may be located inside the base 2.

[0074] <Variation 2> FIG. 13 is a cross-sectional view showing an example of the configuration of the flow path structure 1 according to the second modification of the embodiment, and corresponds to FIG. 4 of the embodiment.

[0075] 13, in Modification 2, the thermocouple unit 10 may be located around the inlet path 4a in addition to the periphery of the branch path 4c, thereby making it possible to measure temperature changes on the upstream and downstream sides of the flow path 4.

[0076] In addition, in Modification 2, the plurality of thermocouple units 10 located around the branch path 4c may be located at positions that are different distances from the first surface 2a, thereby making it possible to measure temperature changes of the process gas on the upstream and downstream sides of the branch path 4c.

[0077] In addition, in Modification 2, the thermocouple units 10 located around the branch path 4c may be positioned so as to overlap each other when the first surface 2a is viewed from the front, thereby making it possible to measure the temperature change of the process gas on the upstream side and downstream side of the same branch path 4c.

[0078] <Variation 3> 14 and 15 are front views showing an example of the configuration of the flow path structure 1 according to Modification 3 of the embodiment. Fig. 14 is a front view seen from the first surface 2a side of the base 2, and Fig. 15 is a front view seen from the second surface 2b side of the base 2.

[0079] As shown in Figures 14 and 15, in variant example 3, multiple thermocouple sections 10, three in the figure, are connected to one terminal 13 located on the second surface 2b via the wiring section 11b and via section 11c of a common first metal wiring 11.

[0080] On the other hand, in the third modification, the plurality of thermocouple sections 10 are connected to the plurality of terminals 14 located on the second surface 2b via the wiring sections 12b and via sections 12c of the individual second metal wirings 12, respectively.

[0081] In this way, by sharing at least one of the first metal wiring 11 and the second metal wiring 12, it is possible to reduce the number of terminals 13, 14, which is normally required in total to be twice the number of thermocouple parts 10. Therefore, according to the third modification, it is possible to simplify the manufacturing process of the flow path structure 1.

[0082] In the flow path structure 1 of the third modification, the temperature of each thermocouple portion 10 can be measured by switching the terminal 14 to be measured in a temperature measuring device (not shown).

[0083] 13 and 14 show an example in which first metal wiring 11 is shared, but the present disclosure is not limited to such an example, and second metal wiring 12 may be shared. That is, either first metal wiring 11 or second metal wiring 12 may be shared.

[0084] 13 and 14 show an example in which the via portions 11c and 12c are located on the periphery of the base 2, but the present disclosure is not limited to such an example. For example, if a support pillar is provided in the widened path 4b (see FIG. 4), the via portions 11c and 12c may be located on the support pillar. This allows for greater design freedom for the first metal wiring 11 and the second metal wiring 12.

[0085] <Variation 4> Fig. 16 is a front view showing an example of the configuration of the flow path structure 1 according to Modification 4 of the embodiment. As shown in Fig. 16, in Modification 4, when the first surface 2a is viewed from the front, the thermocouple portion 10 may be located at a position farther from the center of the first surface 2a than the opening group 5A formed of a plurality of openings 5.

[0086] In this way, by positioning the thermocouple section 10 outside the opening group 5A, it is possible to measure the temperature outside the opening group 5A, where the temperature is likely to drop during the process.

[0087] <Variation 5> Fig. 17 is an enlarged cross-sectional view showing an example of the configuration of the flow path structure 1 according to Modification 5 of the embodiment. Fig. 17 is an enlarged cross-sectional view of a peripheral portion of the base 2. As shown in Fig. 17, in Modification 5, the RF electrode 20 is located inside the base 2 along the first surface 2a.

[0088] The RF electrode 20 is connected to a high-frequency power supply (not shown). When a high frequency is applied from the high-frequency power supply to the RF electrode 20, plasma can be generated inside the semiconductor manufacturing apparatus 100 (see FIG. 1).

[0089] In the fifth modification, as shown in FIG. 17, when the first surface 2a is viewed from the front, the thermocouple section 10 may be located at a position farther from the center of the first surface 2a than the RF electrode 20.

[0090] In this way, by positioning the thermocouple portion 10 outside the RF electrode 20, it is possible to reduce the obstruction of high frequency transmission toward the first surface 2a of the substrate 2 by the conductive thermocouple portion 10 when generating plasma on the first surface 2a side of the substrate 2.

[0091] Therefore, according to the fifth modification, the process of the semiconductor wafer W in the semiconductor manufacturing apparatus 100 can be stably carried out.

[0092] <Variation 6> Fig. 18 is an enlarged cross-sectional view showing an example of the configuration of the flow path structure 1 according to Modification 6 of the embodiment. As shown in Fig. 18, the thermocouple section 10 may be located at a position farther from the first surface 2a than the RF electrode 20.

[0093] In this way, by positioning the thermocouple portion 10 farther away from the first surface 2a than the RF electrode 20, it is possible to reduce the obstruction of high frequency transmission toward the first surface 2a side of the substrate 2 by the conductive thermocouple portion 10 when generating plasma on the first surface 2a side of the substrate 2.

[0094] Therefore, according to the sixth modification, the process of the semiconductor wafer W in the semiconductor manufacturing apparatus 100 can be stably carried out.

[0095] The flow channel structure 1 according to the embodiment includes a base 2, a flow channel 4, a plurality of openings 5, a first metal wiring 11, and a second metal wiring 12. The base 2 has a first surface 2a and is made of ceramic. The flow channel 4 is located inside the base 2 and has a plurality of branch paths 4c. The plurality of openings 5 ​​are located on the first surface 2a and are connected to the plurality of branch paths 4c, respectively. At least a portion of the first metal wiring 11 is located inside the base 2 and is made of a first metal. At least a portion of the second metal wiring 12 is located inside the base 2 and is made of a second metal different from the first metal. The first metal wiring 11 and the second metal wiring 12 are connected inside the base 2 and form a thermocouple unit 10 having thermocouple function. When the first surface 2a is viewed from the front, the first metal wiring 11 and the second metal wiring 12 surround the opening 5, and the thermocouple unit 10 is located around the opening 5. This allows for accurate estimation of process data during processing.

[0096] Furthermore, in the flow path structure 1 according to the embodiment, when the first surface 2a is viewed from the front, the thermocouple section 10 surrounds the opening 5. This allows the process data during the process to be estimated with even greater accuracy.

[0097] Furthermore, in the flow channel structure 1 according to the embodiment, when the first surface 2a is viewed from the front, the first metal wiring 11 and the second metal wiring 12 are positioned to overlap in the thermocouple portion 10. This allows for more accurate estimation of process data during the process.

[0098] Furthermore, in the flow path structure 1 according to the embodiment, the thermocouple portion 10 has a region containing the first metal and the second metal, which can improve the reliability of the thermocouple portion 10.

[0099] Furthermore, in the flow path structure 1 according to the embodiment, when the first surface 2a is viewed from the front, the thermocouple portion 10 is located at a position farther from the center of the first surface 2a than the opening group 5A formed of the plurality of openings 5. This allows for accurate estimation of process data during the process.

[0100] Furthermore, in the flow path structure 1 according to the embodiment, the base 2 further includes an RF electrode 20 located therein. When the first surface 2a is viewed from the front, the thermocouple unit 10 is located at a position farther from the center of the first surface 2a than the RF electrode 20. This allows for accurate estimation of process data during the process, and also allows for stable execution of the process of the semiconductor wafer W in the semiconductor manufacturing apparatus 100.

[0101] Furthermore, in the flow path structure 1 according to the embodiment, the base 2 further includes an RF electrode 20 located therein. The thermocouple unit 10 is located at a position farther from the first surface 2a than the RF electrode 20. This allows for accurate estimation of process data during the process, and also allows for stable execution of the process of the semiconductor wafer W in the semiconductor manufacturing apparatus 100.

[0102] Moreover, the semiconductor manufacturing apparatus 100 according to the embodiment includes a mounting table 120, a chamber 110, and the above-described flow path structure 1. This allows the semiconductor wafer W to be processed while accurately estimating process data during the process.

[0103] Although the embodiments of the present disclosure have been described above, the present disclosure is not limited to the above embodiments, and various modifications are possible without departing from the spirit thereof. For example, the flow path structure 1 of the present disclosure may be provided with a heater inside the substrate 2. This allows the process gas flowing through the flow path 4 to be heated. The temperature of the heater can also be measured by the thermocouple unit 10. In the present disclosure, the use of the thermocouple unit 10 allows local temperature measurement, and the provision of multiple thermocouple units 10 allows the temperature distribution within the shower plate to be precisely measured.

[0104] Further advantages and other aspects may readily occur to those skilled in the art. Therefore, the disclosure in its broader aspects is not limited to the specific details and representative embodiments shown and described above. Accordingly, various modifications may be made without departing from the spirit or scope of the general inventive concept as defined by the appended claims and their equivalents. [Explanation of symbols]

[0105] 1 Flow path structure 2 Base 2a 1st page 3 aperture 4 Flow path 4a Introductory path 4b Widening Road 4c Fork in the road 5 aperture 5A aperture group 10 Thermocouple section 11 1st metal wiring 12 2nd metal wiring 100 Semiconductor manufacturing equipment 110 Chamber 111 Opening 120 Mounting table

Claims

1. a substrate having a first surface and made of ceramic; a flow path located inside the substrate and having a plurality of branch paths; a plurality of openings located on the first surface and respectively connected to the plurality of branch paths; a first metal wiring at least a portion of which is located inside the base and which is made of a first metal; a second metal wiring at least a portion of which is located inside the base and which is made of a second metal different from the first metal; Equipped with the first metal wiring and the second metal wiring are connected inside the base to form a thermocouple portion having a thermocouple function; When the first surface is viewed from the front, the first metal wiring and the second metal wiring surround the periphery of the opening, and the thermocouple portion is located around the periphery of the opening. Flow path structure.

2. When the first surface is viewed from the front, the thermocouple portion surrounds the opening. The flow path structure according to claim 1 .

3. When the first surface is viewed from the front, the first metal wiring and the second metal wiring are positioned to overlap each other in the thermocouple portion. The flow path structure according to claim 1 or 2.

4. The thermocouple portion has a region including the first metal and the second metal. The flow path structure according to claim 1 or 2.

5. When the first surface is viewed from the front, the thermocouple portion is located at a position farther from the center of the first surface than an opening group formed by the plurality of openings. The flow path structure according to claim 1 or 2.

6. the substrate further having an RF electrode located therein; When the first surface is viewed from the front, the thermocouple portion is located at a position farther from the center of the first surface than the RF electrode. The flow path structure according to claim 5 .

7. the substrate further having an RF electrode located therein; The thermocouple portion is located at a position farther from the first surface than the RF electrode. The flow path structure according to claim 5 .

8. A mounting table; a chamber; The flow path structure according to claim 1 or 2; A semiconductor manufacturing device comprising:

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