Laser irradiation device, laser irradiation method, and display manufacturing method

Abstract

A laser irradiation device (1) according to an embodiment of the present invention comprises: a laser light source (35); an optical system unit (30) that guides a laser beam (15) to a substrate; a floating unit (10) that has a through-hole provided directly below the position of irradiation with the laser beam (15) and causes the substrate to float; a conveyance unit (11) that conveys the substrate floating on the floating unit (10) in a first direction; and a stage (40) that is disposed on the floating unit (10) and that holds the optical system unit (30) so as to be movable in a second direction different from the first direction in a top view.

Description

[Technical Field]

[0001] The present invention relates to a laser irradiation device, a laser irradiation method, and a display manufacturing method. [Background technology]

[0002] Patent Document 1 discloses a laser annealing device using an excimer laser. In Patent Document 1, a levitation unit levitates a substrate, and a transport unit transports the substrate. A linear laser beam is irradiated onto the substrate during transportation. [Prior art documents] [Patent documents]

[0003] [Patent Document 1] Patent Publication No. 2018-64048 Summary of the Invention [Problem to be solved by the invention]

[0004] Such excimer laser light sources are expensive, making it difficult to reduce the component costs of the device. Therefore, it is desirable to use a light source other than an excimer laser light source. Semiconductor lasers are inexpensive, but they are continuous wave (CW) lasers. When CW laser light is pulsed using a modulator, the output power decreases. Therefore, many light sources are required, making it difficult to reduce costs.

[0005] Other objects and novel features will become apparent from the description of this specification and the accompanying drawings.

[0006] According to one embodiment, the laser irradiation device is a laser irradiation device that irradiates laser light onto a film provided on a substrate, and includes a laser light source that generates laser light of a wavelength at least a portion of which is transmitted through the film, an optical system unit that guides the laser light to the substrate, and a levitation unit that has a through hole provided directly below the irradiation position of the laser light and levitates the substrate.

[0007] According to one embodiment, a laser irradiation device includes a semiconductor laser light source that generates laser light having a wavelength of 500 nm or less, a transport unit that transports a substrate in a first direction, an optical system unit that guides the laser light, which is pulsed light, to the substrate, and a drive mechanism that drives the optical system unit to change the irradiation position of the laser light on the substrate in a second direction different from the first direction when viewed from above.

[0008] According to one embodiment, the laser irradiation device is a laser irradiation device that performs a dehydrogenation process on a film provided on a substrate, and is equipped with a semiconductor laser light source that generates laser light with a wavelength of 500 nm or less, an optical system unit that guides the laser light to the substrate, and a drive mechanism that changes the irradiation position of the laser light on the substrate.

[0009] According to one embodiment, the laser irradiation device includes a transport unit that moves a substrate having a film formed thereon in a first direction, a semiconductor laser light source that generates laser light with a wavelength of 500 nm or less, an optical system unit that guides the laser light to the substrate, a drive mechanism that changes the irradiation position of the laser light on the substrate in a second direction tilted from the first direction in a top view, an excimer laser light source that generates excimer laser light for crystallizing the film, and a crystallization optical system that guides the excimer laser light to the substrate being transported as a line beam whose longitudinal direction is tilted from the first direction in a top view.

[0010] According to one embodiment, the laser irradiation method is a laser irradiation method for irradiating a film provided on a substrate with laser light, and includes the steps of: (A1) levitating the substrate using a levitation unit having a through-hole provided directly below the irradiation position of the laser light; (A2) generating laser light of a wavelength at least a portion of which is transmitted through the film; and (A3) guiding the laser light to the levitated substrate using an optical system unit.

[0011] According to one embodiment, a laser irradiation method includes the steps of (B1) generating laser light having a wavelength of 500 nm or less using a semiconductor laser light source, (B2) transporting a substrate in a first direction using a transport unit, (B3) guiding the laser light, which is pulsed light, to the substrate using an optical system unit, and (B4) driving the optical system unit to change the irradiation position of the laser light on the substrate in a second direction different from the first direction when viewed from above.

[0012] According to one embodiment, the laser irradiation method is a laser irradiation method for performing a dehydrogenation process on a film provided on a substrate, and includes the steps of: (C1) generating laser light having a wavelength of 500 nm or less using a semiconductor laser light source; (C2) guiding the laser light to the substrate using an optical system unit; and (C3) changing the irradiation position of the laser light on the substrate.

[0013] According to one embodiment, the laser irradiation method includes the steps of: (D1) transporting a substrate having a film formed thereon in a first direction by a transport unit; (D2) generating laser light having a wavelength of 500 nm or less by a semiconductor laser light source; (D3) guiding the laser light to the substrate by an optical system unit; (D4) changing the irradiation position of the laser light on the substrate to a second direction different from the first direction when viewed from above; (D5) generating excimer laser light for crystallizing the film by an excimer laser light source; and (D6) guiding the excimer laser light to the substrate during transportation as a linear line beam whose longitudinal direction is tilted from the first direction when viewed from above.

[0014] According to one embodiment, a method for manufacturing a display includes an irradiation step (S1) of irradiating a film formed on a substrate with laser light, and the irradiation step (S1) includes the steps of (SA1) levitating the substrate using a levitation unit having a through-hole provided directly below the irradiation position of the laser light, (SA2) generating laser light of a wavelength at least a portion of which is transmitted through the film, and (SA3) guiding the laser light to the levitated substrate using an optical system unit.

[0015] According to one embodiment, a method for manufacturing a display includes an (S1) irradiation step of irradiating a film formed on a substrate with laser light, and the (S1) irradiation step includes: (SB1) a step of generating laser light having a wavelength of 500 nm or less using a semiconductor laser light source; (SB2) a step of transporting the substrate in a first direction using a transport unit; (SB3) a step of guiding the laser light, which is pulsed light, to the substrate using an optical system unit; and (SB4) a step of driving the optical system unit to change the irradiation position of the laser light on the substrate in a second direction different from the first direction when viewed from above.

[0016] According to one embodiment, a method for manufacturing a display includes (T1) an irradiation step of irradiating a film formed on a substrate with laser light to perform a dehydrogenation treatment on the film, and the (T1) irradiation step includes (TC1) a step of generating laser light having a wavelength of 500 nm or less using a semiconductor laser light source, (TC2) a step of guiding the laser light to the substrate using an optical system unit, and (TC3) a step of changing the irradiation position of the laser light on the substrate.

[0017] According to one embodiment, a method for manufacturing a display includes (S1) an irradiation step of irradiating laser light onto a film formed on a substrate, and the (S1) irradiation step includes (SD1) a step of transporting the substrate on which the film has been formed in a first direction by a transport unit, (SD2) a step of generating laser light having a wavelength of 500 nm or less by a semiconductor laser light source, (SD3) a step of guiding the laser light to the substrate by an optical system unit, (SD4) a step of changing the irradiation position of the laser light on the substrate to a second direction different from the first direction when viewed from above, (SD5) a step of generating excimer laser light for crystallizing the film by an excimer laser light source, and (SD6) a step of guiding the excimer laser light to the substrate during transportation as a linear line beam whose longitudinal direction is tilted from the first direction when viewed from above.

[0018] According to the embodiment, it is possible to provide a highly productive laser irradiation device, a laser irradiation method, and a display manufacturing method. [Brief explanation of the drawings]

[0019] [Figure 1] 1 is a top view schematically showing a laser irradiation device according to an embodiment; [Figure 2] 1 is an XZ cross-sectional view schematically showing a laser irradiation device according to an embodiment. [Figure 3] 1 is a YZ cross-sectional view schematically showing a laser irradiation device according to an embodiment. [Figure 4]1 is a table showing the penetration depth of silicon films. [Figure 5] FIG. 10 is an XZ cross-sectional view schematically showing a laser irradiation device according to a modified example. [Figure 6] FIG. 10 is a side view schematically showing a laser irradiation device according to a second embodiment. [Figure 7] FIG. 2 is a top view schematically showing the spot shape of laser light. [Figure 8] FIG. 10 is a top view schematically showing a laser irradiation device according to a third embodiment. [Figure 9] FIG. 10 is a side view schematically showing a laser irradiation device according to a third embodiment. [Figure 10] 1 is a photograph showing an annealed silicon film. [Figure 11] 1 is a SIMS profile showing the hydrogen concentration in an annealed silicon film. [Figure 12] FIG. 1 is a cross-sectional view showing a simplified configuration of an organic EL display. [Figure 13] 1A to 1C are cross-sectional views showing steps in a manufacturing method for a display according to the present embodiment. [Figure 14] 1A to 1C are cross-sectional views showing steps in a manufacturing method for a display according to the present embodiment. DETAILED DESCRIPTION OF THE INVENTION

[0020] Embodiment 1 The laser irradiation apparatus according to this embodiment performs an annealing process by irradiating a workpiece (also referred to as a work) with laser light. The laser irradiation apparatus performs a dehydrogenation annealing process on a film provided on the substrate by heating the substrate with laser light. For example, the workpiece is a film-coated substrate on which a silicon film is formed. The laser irradiation apparatus uses a blue semiconductor laser light source as the laser light source. The laser irradiation apparatus performs a dehydrogenation process on the silicon film by irradiating the workpiece with blue laser light from the semiconductor laser light source. Note that the laser light is not limited to blue laser light, and can be laser light with a wavelength of 500 nm or less.

[0021] For example, in a display panel manufacturing process, a film forming apparatus forms a film on a substrate. Then, a laser irradiation apparatus irradiates the film with laser light. The substrate is, for example, a transparent substrate such as a glass substrate or a resin substrate, and the film is, for example, an amorphous silicon film. The substrate with the amorphous silicon film serves as the object to be processed. The laser irradiation apparatus dehydrogenates the amorphous silicon film by irradiating the amorphous silicon film with laser light. Of course, the object to be processed may also be a substrate with a film formed thereon, on which a film other than a silicon film is formed. In the following description, the laser irradiation apparatus is assumed to be a dehydrogenation annealing treatment apparatus using laser light, but it may also be a crystallization annealing treatment apparatus that crystallizes the amorphous silicon film by laser irradiation.

[0022] The configuration of the laser irradiation device according to this embodiment will be described with reference to Fig. 1 to Fig. 3. Fig. 1 is a top view schematically showing the configuration of the laser irradiation device 1. Fig. 2 is an XZ sectional view schematically showing the configuration of the laser irradiation device 1. Fig. 3 is a YZ sectional view schematically showing the configuration of the laser irradiation device 1.

[0023] 1 to 3, the laser irradiation device 1 includes a levitation unit 10, a transport unit 11, an optical system unit 30, a Y-drive mechanism 32, and a stage 40. The levitation unit 10 and the transport unit 11 constitute a transport device.

[0024] In the following figures, an XYZ three-dimensional Cartesian coordinate system is shown where appropriate for ease of explanation. The Z direction is the vertical direction, perpendicular to the main surface of the workpiece 16. The X direction is the transport direction of the workpiece 16. The Y direction is the movement direction of the optical system unit 30. The workpiece 16 being transported in the X direction is irradiated with the laser light 15. Furthermore, the optical system unit 30 moves in the Y direction. Therefore, the irradiation position of the laser light on the workpiece 16 can be changed in the X direction and the Y direction. This allows the laser light to be irradiated onto almost the entire surface of the workpiece 16.

[0025] As shown in Fig. 2, the levitation unit 10 is configured to eject gas from the surface of the levitation unit 10. The levitation unit 10 levitates the object 16 to be processed using its upper surface. The gas ejected from the surface of the levitation unit 10 is sprayed onto the lower surface of the object 16 to cause the object 16 to levitate. When the object 16 to be processed is transported, the levitation unit 10 adjusts the amount of levitation so that the object 16 does not come into contact with other mechanisms (not shown) arranged above the object 16 to be processed.

[0026] The levitation unit 10 is made of a porous material. For example, the levitation unit 10 is made of a ceramic material such as porous alumina or porous SiC. Here, the levitation unit 10 is a porous material plate with a thickness of 10 mm. The levitation unit 10 is connected to an air supply port (not shown). Therefore, gas from a gas supply means (not shown) such as a gas cylinder is ejected from the upper surface of the levitation unit 10.

[0027] The transport unit 11 transports the floating workpiece 16 in the transport direction. As shown in FIG. 1, the transport unit 11 includes a holding mechanism 12 and a moving mechanism 13. The holding mechanism 12 holds the workpiece 16. For example, the holding mechanism 12 can be configured using a vacuum suction mechanism. The vacuum suction mechanism is made of a metal material such as an aluminum alloy. Alternatively, the holding mechanism 12 may be made of a resin material such as PEEK (polyether ether ketone). The upper surface of the holding mechanism 12 has suction grooves, suction holes, etc. formed thereon. The holding mechanism 12 may also be made of a porous material.

[0028] The holding mechanism 12 (vacuum suction mechanism) is connected to an exhaust port (not shown), which is connected to an ejector, a vacuum pump, etc. Therefore, a negative pressure for sucking gas acts on the holding mechanism 12, and the object 16 to be processed can be held by using the holding mechanism 12.

[0029] The holding mechanism 12 holds the object 16 by sucking the surface (lower surface) of the object 16 opposite to the surface (upper surface) irradiated with the laser light 15, that is, the surface of the object 16 facing the levitation unit 10. The holding mechanism 12 also holds the end of the object 16 in the +Y direction.

[0030] The moving mechanism 13 provided in the transport unit 11 is connected to the holding mechanism 12. The moving mechanism 13 is configured to be able to move the holding mechanism 12 in the transport direction. The transport unit 11 (holding mechanism 12 and moving mechanism 13) is provided on the end side of the levitation unit 10 in the +Y direction, and the object 16 is transported by the moving mechanism 13 moving in the transport direction while the holding mechanism 12 holds the object 16.

[0031] 1, for example, the moving mechanism 13 is configured to slide the end of the levitation unit 10 in the +Y direction along the transport direction. When the moving mechanism 13 slides the end of the levitation unit 10 along the transport direction, the object 16 to be processed is transported along the transport direction.

[0032] The transport speed of the object 16 can be controlled by controlling the movement speed of the movement mechanism 13. The movement mechanism 13 includes, for example, an actuator such as a motor, a linear guide mechanism, an air bearing, and the like (not shown).

[0033] The workpiece 16 is a rectangular substrate with edges parallel to the X and Y directions. The workpiece 16 includes a substrate 16a and a film 16b formed on the substrate 16a. The substrate 16a is a transparent substrate such as a glass substrate. The film 16b is a silicon film such as an amorphous silicon film. By irradiating the film 16b with laser light 15 and performing an annealing process, the hydrogen contained in the film 16b can be removed. In other words, the laser irradiation device 1 functions as a dehydrogenation treatment device. Although the film 16b is a silicon film, other films may be formed. For example, a thin film of copper or aluminum, which will serve as wiring, may be formed as an underlayer for the silicon film. Furthermore, an insulating film such as a silicon oxide film may be formed as an underlayer on the substrate 16a.

[0034] A stage 40 is disposed above the levitation unit 10. The stage 40 movably holds the optical system unit 30. The optical system unit 30 guides laser light from a laser light source 35 to the object 16 to be processed. The optical system unit 30 is disposed on the -X side of the stage 40. Therefore, the optical system unit 30 is disposed directly above the object 16 to be processed. Therefore, the laser light 15 from the optical system unit 30 is irradiated onto the object 16 to be processed from above.

[0035] Stage 40 serves as a guide mechanism that guides movement of optical system unit 30 in the Y direction. For example, stage 40 is provided with guide rails, guide grooves, etc. Stage 40 is also provided with Y drive mechanism 32. Stage 40 is a gantry stage that is provided along the Y direction in the space above levitation unit 10. Y drive mechanism 32 drives optical system unit 30 in the Y direction.

[0036] The optical system unit 30 moves along the stage 40. As the optical system unit 30 moves in the Y direction, the irradiation position of the laser light 15 changes in the Y direction. On the +Y side and the -Y side, the stage 40 is positioned so as to extend beyond the levitation unit 10. Therefore, in the Y direction, the optical system unit 30 can irradiate the laser light to any position on the object 16 to be processed.

[0037] Next, an example of a laser light source and its optical system will be described. The laser light source 35 generates laser light for annealing the workpiece 16. The laser light source 35 is a blue laser diode (BLD) that generates blue laser light with a center wavelength of 450 nm. In other words, the laser light source 35 is a blue semiconductor laser light source. Here, the laser light is a continuous wave (CW) laser light. Of course, the laser irradiation device 1 may modulate the laser light into pulsed laser light using a modulator or the like.

[0038] The laser light source 35 is coupled to an optical fiber 36. The laser light from the laser light source 35 enters the optical system unit 30 via the optical fiber 36. As shown in FIG. 2, the optical system unit 30 includes a lens 301, a mirror 302, and a lens 303. Of course, the optical system unit 30 may include optical elements other than the lens 301, the mirror 302, and the lens 303. Furthermore, the spot shape of the laser light 15 on the object to be processed 16 is a line shape of 10 mm x 0.3 mm. The laser light 15 is a CW light, and the irradiation time at one point on the object to be processed 16 is 10 μsec to 1 sec.

[0039] The laser light from the optical fiber 36 enters a lens 301. The laser light condensed by the lens 301 enters a mirror 302. The mirror 302 reflects the laser light toward the object 16 to be processed. Specifically, the mirror 302 reflects the laser light downward. The laser light reflected by the mirror 302 enters a lens 303.

[0040] The laser light 15 from the lens 303 is irradiated onto the object 16 to be treated. The lens 303 focuses the laser light 15 onto the object 16 to be treated. Therefore, the laser light 15 from the optical system unit 30 becomes a focused beam and is irradiated onto the object 16 to be treated. The optical system unit 30 irradiates the laser light 15 onto the object 16 to be treated from above. The film 16b on the object 16 to be treated is annealed, and dehydrogenation treatment can be performed on the film 16b. Note that the optical axis of the lens 303 is parallel to the Z direction, but it may be tilted from the Z direction.

[0041] Here, since the laser light source 35 is a blue semiconductor laser light source, the laser light 15 is blue laser light. For example, the center wavelength of the laser light 15 is 450 nm. Blue light has a deep penetration depth into silicon films. Therefore, not all of the laser light 15 is absorbed by the workpiece 16, and part of the laser light 15 passes through the workpiece 16.

[0042] If the laser light that has passed through the workpiece 16 is absorbed by the levitation unit 10, the levitation unit 10 will be heated. As a result, the temperature of the levitation unit 10 will fluctuate during the process. Furthermore, because the laser light is reflected or scattered on the surface of the levitation unit 10, the laser light from directly below the irradiated area will be incident on the workpiece 16 again. This may result in the dehydrogenation annealing process becoming unstable.

[0043] Therefore, in this embodiment, as shown in Figures 1 and 2, a through hole 10a is provided in the levitation unit 10 directly below the irradiation point of the laser light 15. In a top view, the through hole 10a is formed in a band-shaped region with the Y direction as the longitudinal direction. The laser light 15 passes through the through hole 10a and does not enter the levitation unit 10. This prevents the laser light 15 from being absorbed, reflected, or scattered by the levitation unit 10. In the X direction, the width of the through hole 10a is approximately 10 mm. In the Y direction, the length of the through hole 10a is approximately the same as the movable range of the optical system unit 30.

[0044] This makes it possible to stabilize the temperature of the levitation unit 10. Furthermore, it is possible to prevent reflected or scattered light from the levitation unit 10 from being incident again on the workpiece 16. It is possible to reduce reflected and scattered light from the surface of the levitation unit 10. In this way, a stable dehydrogenation process is possible, and productivity can be improved.

[0045] In this embodiment, while the transport unit 11 is transporting the workpiece 16, the Y drive mechanism 32 drives the optical system unit 30. That is, the Y drive mechanism 32 moves the irradiation position of the laser light in the Y direction, and the transport unit 11 moves the workpiece 16 in the X direction. Therefore, the irradiation position of the laser light on the workpiece 16 changes in the X and Y directions. This allows the laser light to be irradiated onto almost the entire surface of the workpiece 16. Therefore, almost the entire film 16b can be annealed, and the dehydrogenation process can be performed appropriately.

[0046] Furthermore, the movement speed of the optical system unit 30 in the Y direction may be faster than the transport speed in the X direction. This allows the laser irradiation position to be changed quickly in the Y direction. This prevents localized heating, thereby preventing effects on the base film, etc.

[0047] In this embodiment, a blue laser diode is provided as the laser light source 35, but the laser light source 35 is not limited to this. Specifically, when a film 16b of a predetermined thickness is provided on the substrate 16a, the laser light source 35 may be any light source that generates laser light of a wavelength that allows at least a part of the laser light to pass through the film 16b.

[0048] Whether or not a wavelength is transmitted through film 16b is determined by the material and thickness of the film. For example, if film 16b is an amorphous silicon film, the penetration depth (penetration depth) for light with a wavelength of 450 nm is 0.02 μm. The penetration depth is the thickness of a material when the amount of incident light entering the material becomes 1 / e, where e is Napier's number. The penetration depth is determined by the extinction coefficient of the material. Furthermore, the extinction coefficient is wavelength-dependent. The penetration depth is determined by the material of the film and the wavelength of the light.

[0049] FIG. 4 is a table showing the penetration depth of amorphous silicon (a-Si) films and single-crystal silicon (c-Si) films. FIG. 4 shows the penetration depth for light with wavelengths of 308 nm, 355 nm, 450 nm, 532 nm, and 808 nm. The penetration depth is the film thickness at which the absorption rate becomes 1 / e (63%). If film 16b is an amorphous silicon film and the laser wavelength is 450 nm, the penetration depth is 0.02 μm. In other words, when laser light with a wavelength of 450 nm is incident on an amorphous silicon film with a film thickness of 0.02 μm, 36.8% of the light is transmitted through the amorphous silicon film, and 1 / e = 63% is absorbed by the amorphous silicon film.

[0050] When the film 16b has a thickness four times the penetration depth, 1.8% (=1 / e 4 ) will be transmitted through the film 16b. Furthermore, in the annealing process for dehydrogenation, if 1.8% of the laser light is incident on the levitation unit 10, the annealing process will be affected. Therefore, the laser irradiation device 1 according to this embodiment is suitable for annealing the film 16b having a thickness four times or less than the penetration depth. In other words, when annealing a film having a thickness four times or more than the penetration depth, the effect on the levitation unit 10 is minor. If the thickness of the film 16b is determined, the range of laser wavelengths suitable for this embodiment is determined.

[0051] Here, let's assume that film 16b is an amorphous silicon film with a thickness of 40 nm. As shown in the table in FIG. 4, the penetration depth is 10 nm when the laser wavelength is 355 nm. When the laser wavelength is 355 nm or longer, 2% or more of the laser light passes through film 16b, affecting the process. For example, when using laser light with a wavelength of 355 nm or longer and 808 nm or shorter, 2% or more of the laser light passes through film 16b. Absorption, reflection, or scattering in the levitation unit 10 may cause process variations. Therefore, the laser irradiation device according to this embodiment is suitable for use with laser light with a wavelength of 355 nm or longer and 808 nm or shorter. In other words, it is suitable for annealing films with a thickness four times or less than the penetration depth of the laser wavelength light.

[0052] In this embodiment, the optical system unit 30 may include an optical scanner for scanning the laser beam. For example, the mirror 302 may be a galvanometer mirror. The optical scanner deflects the laser beam to change the irradiation position of the laser beam. Here, the optical scanner is a uniaxial optical scanner that changes the irradiation position of the laser beam in the X direction. In other words, by changing the irradiation position in the X direction, the optical scanner can shorten the irradiation time during which the laser beam is continuously irradiated onto one point on the workpiece 16. This prevents localized heating of the base film, etc., thereby enabling a stable annealing process. When an optical scanner is used, the lens 303 may be an fθ lens. This allows the irradiation direction of the laser beam to be parallel to the Z direction even when the optical scanner deflects the laser beam.

[0053] The laser irradiation method according to this embodiment is a laser irradiation method for irradiating a film formed on a substrate with laser light. The laser irradiation method includes the steps of: floating the substrate using a floating unit having a through-hole provided directly below the irradiation position of the laser light; transporting the substrate floating on the floating unit in a first direction; generating laser light of a wavelength at least partially transmitted through the film; guiding the laser light to the substrate being transported using an optical system unit; and moving the optical system unit in the second direction so as to change the irradiation position of the laser light to a second direction different from the first direction in a top view. This can improve productivity.

[0054] (Variation 1) The laser irradiation device 1 according to the first modification will be described with reference to Fig. 5. Fig. 5 is a side cross-sectional view that schematically shows the configuration of the laser irradiation device 1. In the first modification, a damper 19 is added to the configuration of the first embodiment.

[0055] The damper 19 is disposed directly below the through-hole 10a. The damper 19 absorbs the laser light 15 that passes through the through-hole 10a. The damper 19 is a metal block whose longitudinal direction is the Y direction. It can be made to have a length approximately equal to that of the through-hole 10a. For example, the damper 19 is formed from a black-colored metal material. By providing the damper 19 that absorbs the laser light 15, the laser light reflected or scattered around the through-hole 10a can be incident on the workpiece 16. This enables a more stable process.

[0056] 5, damper 19 is disposed directly below through-hole 10a, but the location of damper 19 is not limited to directly below through-hole 10a. For example, a mirror that reflects blue laser light may be disposed directly below through-hole 10a. Damper 19 may be disposed in any position where it can absorb the laser light reflected by the mirror. In other words, damper 19 absorbs the blue laser light reflected by the mirror.

[0057] The damper 19 may be cooled. For example, a cooling mechanism such as an air-cooling mechanism or a water-cooling mechanism may be provided in the damper 19. Alternatively, the damper 19 may be provided with a heat dissipation mechanism. In this way, it is possible to suppress a temperature rise in the damper 19 and its surroundings, and therefore it is possible to carry out the annealing process stably.

[0058] Embodiment 2 A laser irradiation apparatus according to a second embodiment will be described with reference to FIG. 6. FIG. 6 is a cross-sectional view schematically showing the configuration of a laser irradiation apparatus 1. In the second embodiment, the laser irradiation apparatus 1 is a laser crystallization apparatus for crystallizing an amorphous silicon film. Here, the film 16b before the laser light irradiation is an amorphous silicon film. The film 16b after the laser light irradiation is a polysilicon film. The laser light source 35 is a blue semiconductor laser light source. By irradiating the film 16b with blue laser light, the film 16b becomes a polysilicon film.

[0059] The laser irradiation device 1 includes a modulator 306 and a beam shaping unit 307. The modulator 306 and the beam shaping unit 307 are mounted on the optical system unit 30. The configuration other than the modulator 306 and the beam shaping unit 307 is the same as in the first embodiment, and therefore a description thereof will be omitted.

[0060] The modulator 306 modulates the laser light. As a result, the CW laser light is modulated into a pulsed laser light. Here, the repetition frequency R of the pulsed laser light is 10 kHz to 200 kHz. The irradiation time during which the laser light is continuously irradiated onto one location on the object 16 to be processed is preferably 1 μsec or less.

[0061] The pulsed laser light from the modulator 306 is incident on the beam shaping unit 307. The beam shaping unit 307 shapes the spot shape of the pulsed laser light. For example, the beam shaping unit 307 has a beam shaping mechanism such as a slit. Alternatively, when a plurality of optical fibers 36 are used, the beam may be shaped by arranging the output ends of the optical fibers 36. The beam shaping unit 307 shapes the beam so that the cross-sectional shape of the beam (spot shape) in a direction perpendicular to the optical axis is rectangular. For example, the spot shape is a rectangle with a longitudinal size of 10 mm and a lateral size of 0.03 mm. The spot shape of the beam on the object to be processed 16 will be described later.

[0062] The pulsed laser light shaped by the beam shaping unit 307 is incident on the object to be processed 16 via the lens 301, the mirror 302, and the lens 303, as in the first embodiment. The spot shape of the beam on the object to be processed 16 is shown in FIG.

[0063] 7 is an XY plan view schematically showing the spot shape of the pulsed laser light on the object to be processed 16. In the following description, it is assumed that the transport speed of the object to be processed 16 by the transport unit 11 is sufficiently slower than the moving speed of the optical system unit 30 by the Y drive mechanism 32. The following sizes and the like are examples of this embodiment, and this embodiment is not limited to the following sizes.

[0064] The spot shape of the laser light 15 on the object 16 to be processed is a rectangle having a longitudinal direction. For example, the longitudinal size L of the spot shape is 900 μm, and the lateral size is 15 μm. The lateral and longitudinal directions are perpendicular to each other. The longitudinal direction is tilted from the X and Y directions. Specifically, the angle θ between the lateral and Y directions is 45°. In other words, the longitudinal direction of the spot shape is tilted by 45° from the movement direction of the optical system unit 30.

[0065] Furthermore, the moving speed V of the optical system unit 30 in the Y direction is 70.7 mm / s. The repetition frequency R of the pulsed laser beam is 10 kHz. Therefore, the deviation amount P of the irradiation position per pulse in the Y direction is 7.07 μm / pulse. In other words, the irradiation positions (shot positions) of the two consecutive pulsed laser beams 15a and 15b are deviated by 7.07 μm in the Y direction.

[0066] The deviation amount D (=P×sinθ) of the irradiation positions of the pulsed laser beams 15a and 15b in the longitudinal direction of the spot shape is 5 μm. The deviation amount H (=P×cosθ) of the irradiation positions of the pulsed laser beams 15a and 15b in the lateral direction of the spot shape is 5 μm. Also, S (=L×sinθ) is 318 μm.

[0067] This reduces the number of times the beam end is repeatedly irradiated onto the same location on the object 16. This improves the uniformity of the crystallized film.

[0068] For example, in the beam cross-sectional profile, the light intensity at the beam ends is lower than that at the beam center. In other words, the light intensity is highest at the beam center, and decreases as you move from the beam center to the beam ends. In this case, if the beam ends, which have low light intensity, are repeatedly irradiated, the surface roughness of the film 16b will differ from that of other areas. This will result in display unevenness.

[0069] Therefore, in this embodiment, the longitudinal direction of the beam cross section is tilted from the Y direction. That is, the beam shaping unit 307 shapes the beam so that the longitudinal direction is in a diagonal direction tilted from the Y direction. This makes it possible to make the surface roughness uniform, thereby suppressing display unevenness. That is, by the Y drive mechanism 32 moving the optical system unit 30 in the Y direction, the irradiation position of the laser light on the workpiece 16 changes in the longitudinal direction and the lateral direction.

[0070] On the other hand, when the longitudinal direction is parallel to the Y direction, the irradiation position does not change in the longitudinal direction depending on the direction of movement of the optical system unit, and therefore the beam end is irradiated onto the same position multiple times.

[0071] As described above, in this embodiment, the beam shaping unit 307 shapes the cross-sectional shape of the beam so that the direction of the spot shape tilted from the X and Y directions is the longitudinal direction. This makes it possible to prevent the beam end of the laser light from repeatedly irradiating the same position on the workpiece 16. This allows for uniform crystallization.

[0072] The laser irradiation method according to this embodiment includes the steps of generating blue laser light using a semiconductor laser light source, transporting a substrate in a first direction using a transport unit, guiding the laser light, which is pulsed light, to the substrate using an optical system unit, driving the optical system unit to change the irradiation position of the laser light on the substrate in a second direction different from the first direction in a top view, and shaping the laser light so that the longitudinal direction of the spot shape of the laser light on the substrate is tilted from the first direction and the second direction in a top view. This can improve productivity.

[0073] Embodiment 3 In this embodiment, the laser irradiation apparatus 1 is an excimer laser anneal (ELA) apparatus that forms a low temperature polysilicon (LTPS) film. The laser irradiation apparatus 1 according to this embodiment will be described with reference to Figs. 8 and 9. Fig. 8 is a top view that schematically shows the laser irradiation apparatus 1. Fig. 9 is an XZ cross-sectional view that schematically shows the configuration of the laser irradiation apparatus 1.

[0074] In this embodiment, the laser irradiation device 1 includes a laser light source 35, an optical system unit 30, a crystallization laser light source 51, and a crystallization optical system 52. Furthermore, the laser irradiation device 1 has a plurality of optical system units 30. In FIG. 8, four optical system units are shown as optical system units 30a to 30d. Note that description of content common to the first and second embodiments will be omitted as appropriate.

[0075] The laser light source 35 is a blue semiconductor laser light source, as in the first embodiment. The film 16b is dehydrogenated with the blue laser light from the laser light source 35. The basic configuration of the optical system unit 30, the stage 40, etc. is the same as in the first embodiment, and therefore a description thereof will be omitted.

[0076] The crystallization laser light source 51 is a pulsed laser light source that generates pulsed laser light, and is, for example, an excimer laser light source that emits excimer laser light with a center wavelength of 308 nm.

[0077] The excimer laser light from the crystallization laser light source 51 is incident on the crystallization optical system 52. The crystallization optical system 52 guides the laser light to the workpiece 16. The laser light irradiated from the crystallization optical system 52 onto the workpiece 16 is referred to as laser light 55. For example, the crystallization optical system 52 includes a projection lens for focusing the laser light 55 onto the workpiece 16. The crystallization optical system 52 can be the same as that used in a known ELA apparatus, and therefore a detailed description thereof will be omitted.

[0078] The crystallization optical system 52 converts the laser light 55 into a line beam and irradiates the workpiece 16 with the line beam. As shown in FIG. 9, the Y direction is the longitudinal direction of the laser light 55 on the workpiece 16. The laser light 55 forms a linear illumination area on the workpiece 16. That is, the laser light 55 focused on the workpiece 16 forms a linear irradiation area with the Y direction as the longitudinal direction (long axis direction) and the X direction as the lateral direction (short axis direction). Furthermore, the laser light 55 is irradiated onto the film 16b while the transport unit 11 transports the workpiece 16 in the transport direction. In this case, the transport direction is the X direction. This allows the laser light 55 to be irradiated onto a band-shaped area whose width is the length of the irradiation area in the Y direction.

[0079] Here, the transport direction of transport unit 11 is the -X direction. Laser beam 15 is irradiated onto workpiece 16 being transported by transport unit 11, and then laser beam 55 is irradiated onto the workpiece. That is, laser beam 55 for crystallization is irradiated onto the area that has been dehydrogenated with laser beam 15. Therefore, crystallization annealing can be performed immediately after dehydrogenation annealing with blue laser beam.

[0080] This allows for a wider energy density (ED) margin in the ELA process, enabling a stable crystallization process even when the energy density fluctuates, thereby improving the uniformity of the crystallized film.

[0081] A through hole 10a is provided in the levitation unit 10 directly below the irradiation area of ​​the laser light 55. Therefore, the laser light 55 passes through the through hole 10a. Furthermore, as in the first modification, a damper 19 is arranged below the through hole 10a. Therefore, the laser light 55 that passes through the through hole 10a is absorbed by the damper 19. This makes it possible to suppress the absorption, reflection, and diffusion of the laser light 55 by the levitation unit 10. This enables a stable process.

[0082] In this embodiment, the laser beam 15 and the laser beam 55 are successively irradiated onto the workpiece 16 being transported by the transport unit 11. Furthermore, the laser beam 15 and the laser beam 55 are simultaneously irradiated onto different locations on the workpiece 16 being transported. In this manner, the time interval between the dehydrogenation annealing process and the crystallization annealing process can be shortened, thereby widening the process margin.

[0083] In this embodiment, the optical system unit 30 is provided with an optical scanner 305. The optical scanner 305 is, for example, a galvanometer mirror, and scans the laser light in the X direction. This shortens the irradiation time during which the laser light is continuously irradiated onto a specific location on the workpiece 16. This prevents heating of the base film, etc., and enables stable processing.

[0084] Furthermore, the laser irradiation device 1 has a plurality of optical system units 30a to 30d. This makes it possible to reduce the range irradiated by one optical system unit 30. This makes it possible to improve the transport speed in the X direction, thereby shortening the process time (takt time). Therefore, it is possible to improve productivity. Note that in FIG. 8, the optical system units 30a to 30d are provided with independent Y drive mechanisms 32a to 32d, respectively, but the Y drive mechanism 32 for the optical system units 30a to 30d may be shared.

[0085] The method according to this embodiment includes the steps of: transporting a substrate on which a film has been formed in a first direction using a transport unit; generating blue laser light using a semiconductor laser light source; guiding the laser light to the substrate using an optical system unit movable in a second direction different from the first direction in a top view; driving the optical system unit to change the irradiation position of the laser light on the substrate in the second direction; generating excimer laser light for crystallizing the film using an excimer laser light source; and guiding the excimer laser light as a line beam whose longitudinal direction is inclined from the first direction in a top view to the substrate during transportation. This improves productivity. Furthermore, a light source other than an excimer laser light source may be used as the crystallization laser light source 51. For example, a semiconductor laser light source may be used as the crystallization laser light source 51 instead of the excimer laser light source.

[0086] Example Examples will be described below with reference to Fig. 10 and Fig. 11. Fig. 10 is a scanning electron microscope (SEM) photograph showing a silicon film processed by the laser irradiation apparatus according to this embodiment. As shown in Fig. 10, the silicon film is uniformly processed.

[0087] Figure 11 shows SIMS (Secondary Ion Mass Spectrometry) profiles showing hydrogen concentrations. In Figure 11, BLD indicates the hydrogen concentration of a silicon film annealed using the laser irradiation apparatus according to this embodiment. RTA indicates the hydrogen concentration of a silicon film annealed at 500°C using an RTA (Rapid Thermal Anneal) apparatus. Figure 11 also shows the hydrogen concentration of a silicon film that has not been annealed.

[0088] When annealed in the RTA apparatus, the hydrogen concentration of the silicon film is about 0.5 atom %. On the other hand, when annealed in the laser irradiation apparatus according to the present embodiment, the hydrogen concentration of the silicon film is 0.2 atom%Therefore, the laser irradiation apparatus 1 according to this embodiment can perform the dehydrogenation treatment more effectively.

[0089] The laser irradiation method using the above-described laser irradiation device 1 is suitable for a display manufacturing method. For example, the display manufacturing method includes a step of forming a film on a substrate and a step of irradiating the film with laser light by the above-described irradiation method. Note that the configuration of the third embodiment can be appropriately combined with the configurations of the first and second embodiments.

[0090] (OLED display) The semiconductor device having the polysilicon film is suitable for a TFT (Thin Film Transistor) array substrate for an organic EL (ElectroLuminescence) display. That is, the polysilicon film is used as a semiconductor layer having a source region, a channel region, and a drain region of the TFT.

[0091] The following describes a configuration in which the semiconductor device according to this embodiment is applied to an organic EL display. Fig. 12 is a cross-sectional view showing a simplified pixel circuit of an organic EL display. The organic EL display 300 shown in Fig. 12 is an active matrix display device in which a TFT is arranged in each pixel PX.

[0092] The organic EL display 300 includes a substrate 310, a TFT layer 311, an organic layer 312, a color filter layer 313, and a sealing substrate 314. FIG. 12 shows a top-emission organic EL display in which the sealing substrate 314 side is the viewing side. Note that the following description shows one example of the configuration of an organic EL display, and the present embodiment is not limited to the configuration described below. For example, the semiconductor device according to the present embodiment may be used in a bottom-emission organic EL display.

[0093] The substrate 310 is a glass substrate or a metal substrate. A TFT layer 311 is provided on the substrate 310. The TFT layer 311 has a TFT 311a arranged in each pixel PX. The TFT layer 311 further has wiring (not shown) connected to the TFT 311a. The TFT 311a and the wiring constitute a pixel circuit.

[0094] An organic layer 312 is provided on the TFT layer 311. The organic layer 312 has an organic EL light emitting element 312a arranged for each pixel PX. Furthermore, the organic layer 312 is provided with partition walls 312b between the pixels PX to separate the organic EL light emitting elements 312a.

[0095] A color filter layer 313 is provided on the organic layer 312. The color filter layer 313 is provided with a color filter 313a for color display. That is, a resin layer colored in R (red), G (green), or B (blue) is provided in each pixel PX as the color filter 313a.

[0096] A sealing substrate 314 is provided on the color filter layer 313. The sealing substrate 314 is a transparent substrate such as a glass substrate, and is provided to prevent the organic EL light emitting elements of the organic layer 312 from deteriorating.

[0097] The current flowing through the organic EL element 312a of the organic layer 312 varies depending on the display signal supplied to the pixel circuit. Therefore, by supplying a display signal corresponding to the display image to each pixel PX, the amount of light emitted by each pixel PX can be controlled. This allows the desired image to be displayed.

[0098] In an active matrix display device such as an organic EL display, one pixel PX is provided with one or more TFTs (for example, a switching TFT or a driving TFT). The TFT of each pixel PX is provided with a semiconductor layer having a source region, a channel region, and a drain region. The polysilicon film according to this embodiment is suitable for the semiconductor layer of the TFT. That is, by using the polysilicon film manufactured by the above manufacturing method as the semiconductor layer of the TFT array substrate, it is possible to suppress in-plane variations in TFT characteristics. Therefore, it is possible to manufacture display devices with excellent display characteristics with high productivity.

[0099] (Method of manufacturing a semiconductor device) The method for manufacturing a semiconductor device using the laser irradiation apparatus according to this embodiment is suitable for manufacturing a TFT array substrate. The method for manufacturing a semiconductor device having TFTs will be described with reference to FIGS. 13 and 14. FIGS. 13 and 14 are cross-sectional views showing the manufacturing process of a semiconductor device. In the following description, a method for manufacturing a semiconductor device having inverted staggered TFTs will be described. FIGS. 13 and 14 show the step of forming a polysilicon film in the semiconductor manufacturing method. Note that, as known techniques can be used for the other manufacturing steps, their description will be omitted.

[0100] As shown in Fig. 13, a gate electrode 402 is formed on a glass substrate 401. A gate insulating film 403 is formed on the gate electrode 402. An amorphous silicon film 404 is formed on the gate insulating film 403. The amorphous silicon film 404 is disposed so as to overlap the gate electrode 402 with the gate insulating film 403 interposed therebetween. For example, the gate insulating film 403 and the amorphous silicon film 404 are successively formed by a CVD (Chemical Vapor Deposition) method.

[0101] Then, by irradiating the amorphous silicon film 404 with laser light L1, a polysilicon film 405 is formed as shown in FIG. 14. That is, the amorphous silicon film 404 is dehydrogenated by the above-described laser irradiation apparatus 1. Furthermore, the amorphous silicon film 404 is crystallized by the laser irradiation apparatus 1 of the second or third embodiment. As a result, a polysilicon film 405 in which silicon is crystallized is formed on the gate insulating film 403. The amorphous silicon film 404 or the polysilicon film 405 corresponds to the above-described film 16b.

[0102] Furthermore, in the above description, the laser annealing apparatus according to the present embodiment has been described as forming a polysilicon film by irradiating an amorphous silicon film with laser light, but it may also be configured to form a microcrystalline silicon film by irradiating an amorphous silicon film with laser light. Furthermore, the laser light used for annealing is not limited to a blue laser diode or an Nd:YAG laser.

[0103] The method according to this embodiment can also be applied to a laser irradiation apparatus that irradiates laser light onto a thin film other than a silicon film. That is, the method according to this embodiment can be applied to any laser irradiation apparatus that irradiates laser light onto an amorphous film to form a crystallized film. The laser irradiation apparatus 1 can also be used in laser annealing processes that dehydrogenate thin films other than silicon films. The laser irradiation apparatus according to this embodiment can appropriately modify a substrate with a crystallized film.

[0104] The laser irradiation method according to this embodiment is a laser irradiation method for performing a dehydrogenation treatment on a film provided on a substrate, and includes the steps of generating blue laser light using a semiconductor laser light source, guiding the laser light to the substrate using an optical system unit, and changing the irradiation position of the laser light on the substrate.

[0105] It is possible to use a part or all of the embodiments 1 to 3 in combination as appropriate. Note that the present invention is not limited to the above-described embodiments, and can be modified as appropriate within the scope of the invention. [Explanation of symbols]

[0106] 1. Laser irradiation device 10 Levitation Unit 11 Transport unit 12 Retention mechanism 13 Moving mechanism 15 Laser light 16 Object to be treated 16a board 16b Membrane 19 Damper 30 Optical system unit 32 Y drive mechanism 301 Lens 302 Mirror 303 Lens 40 stages

Claims

1. A laser irradiation device that irradiates laser light onto an amorphous silicon film provided on a transparent substrate, comprising: a semiconductor laser light source that generates laser light having a wavelength at least a part of which is transmitted through the amorphous silicon film in order to perform a dehydrogenation treatment on the amorphous silicon film; an optical system unit that guides the laser light to the transparent substrate; a floating unit having a through hole provided directly below the irradiation position of the laser light and floating the transparent substrate; a transport unit that transports the transparent substrate floating on the floating unit in a first direction; a drive stage that is disposed on the floating unit and that holds the optical system unit so as to be movable in a second direction different from the first direction when viewed from above; an excimer laser light source that generates excimer laser light for crystallizing the amorphous silicon film; a crystallization optical system that guides the excimer laser light as a line beam having a longitudinal direction in the second direction as viewed from above to a location on the transparent substrate that has been irradiated with the laser light while being transported; A laser irradiation device comprising:

2. A laser irradiation device as described in claim 1, wherein the wavelength of the laser light from the semiconductor laser light source is 355 nm or more and 808 nm or less.

3. The semiconductor laser light source generates a CW laser beam, 3. The laser irradiation device according to claim 1, wherein the CW laser light is converted into pulsed laser light by a modulator and the pulsed laser light is irradiated onto the amorphous silicon film.

4. 4. The laser irradiation device according to claim 1, wherein, in a top view, a longitudinal direction of the spot shape of the laser light on the transparent substrate is inclined from the first direction and the second direction.

5. A laser irradiation device described in any one of claims 1 to 4, wherein the drive stage drives the optical system unit at a speed faster than the substrate transport speed of the transport unit.

6. 6. The laser irradiation device according to claim 1, further comprising a damper that absorbs the laser light that has passed through the through hole.

7. 7. The laser irradiation device according to claim 1, wherein the semiconductor laser light source is a semiconductor laser light source that generates laser light having a wavelength of 500 nm or less.

8. A laser irradiation device described in any one of claims 1 to 7, wherein the laser light from the semiconductor laser light source is incident on the optical system unit via an optical fiber.

9. A laser irradiation device described in any one of claims 1 to 8, wherein the drive stage movably holds multiple optical system units.

10. 9. The laser irradiation device according to claim 1, wherein the optical system unit is provided with an optical scanner that scans the laser light.

11. A laser irradiation method for irradiating an amorphous silicon film provided on a transparent substrate with laser light, comprising: (A1) floating the transparent substrate by a floating unit having a through hole provided directly below the irradiation position of the laser light; (A2) generating laser light having a wavelength at least a part of which is transmitted through the amorphous silicon film by a semiconductor laser light source; (A3) a step of guiding the laser light to the floating transparent substrate by an optical system unit in order to perform a dehydrogenation treatment on the amorphous silicon film, transporting the transparent substrate floating on the floating unit in a first direction; a step of moving the optical system unit in a second direction by a drive stage so as to change an irradiation position of the laser light in the second direction different from the first direction when viewed from above; generating an excimer laser beam for crystallizing the amorphous silicon film by an excimer laser light source; and guiding the excimer laser light as a line beam having a longitudinal direction in the second direction as viewed from above by a crystallization optical system to a portion of the transparent substrate being transported that has been irradiated with the laser light. Laser irradiation method.

12. A laser irradiation method as described in Claim 11, wherein the wavelength of the laser light from the semiconductor laser light source is 355 nm or more and 808 nm or less.

13. The semiconductor laser light source generates a CW laser beam, 13. The laser irradiation method according to claim 12, wherein the CW laser light is converted into pulsed laser light by a modulator and the pulsed laser light is irradiated onto the amorphous silicon film.

14. The spot shape of the laser light on the transparent substrate is formed into a rectangular shape, 14. The laser irradiation method according to claim 11, wherein, in a top view, a longitudinal direction of a spot shape of the laser light on the transparent substrate is inclined from the first direction and the second direction.

15. A laser irradiation method according to claim 11, wherein the driving stage drives the optical system unit at a speed faster than the transport speed of the transparent substrate.

16. The laser irradiation method according to any one of claims 11 to 15, wherein the laser light that has passed through the through hole is absorbed by a damper.

17. The laser irradiation method according to any one of claims 11 to 16, wherein the laser light is a laser light having a wavelength of 500 nm or less generated by the semiconductor laser light source.

18. A laser irradiation method according to any one of claims 11 to 17, wherein the laser light from the semiconductor laser light source is incident on the optical system unit via an optical fiber.

19. A laser irradiation method described in any one of claims 11 to 18, wherein the drive stage movably holds a plurality of the optical system units.

20. The laser irradiation method according to any one of claims 11 to 19, wherein the laser light is scanned by an optical scanner provided in the optical system unit.

21. (S1) an irradiation step of irradiating a laser beam onto an amorphous silicon film formed on a transparent substrate; The (S1) irradiation step includes: (SA1) floating the transparent substrate by a floating unit having a through hole provided directly below the irradiation position of the laser light; (SA2) generating laser light having a wavelength at least a part of which is transmitted through the amorphous silicon film by a semiconductor laser light source; (SA3) a step of guiding the laser light to the floating transparent substrate by an optical system unit in order to perform a dehydrogenation treatment on the amorphous silicon film, transporting the transparent substrate floating on the floating unit in a first direction; a step of moving the optical system unit in a second direction by a drive stage so as to change an irradiation position of the laser light in the second direction different from the first direction when viewed from above; generating an excimer laser beam for crystallizing the amorphous silicon film by an excimer laser light source; A method for manufacturing a display, further comprising a step of using a crystallization optical system to guide the excimer laser light to the transparent substrate being transported as a line beam having a longitudinal direction in the second direction when viewed from above.

22. A method for manufacturing a display as described in Claim 21, wherein the wavelength of the laser light from the semiconductor laser light source is 355 nm or more and 808 nm or less.

23. The semiconductor laser light source generates a CW laser beam, 23. The method for manufacturing a display according to claim 21, wherein the CW laser light is converted into pulsed laser light by a modulator and the pulsed laser light is irradiated onto the amorphous silicon film.

24. The spot shape of the laser light on the transparent substrate is formed into a rectangular shape, 24. A method for manufacturing a display according to claim 21, wherein, when viewed from above, the longitudinal direction of the spot shape of the laser light on the transparent substrate is tilted from the first direction and the second direction.

25. A method for manufacturing a display described in any one of claims 21 to 24, wherein the drive stage drives the optical system unit at a speed faster than the transport speed of the transparent substrate.

26. 26. The method for manufacturing a display according to claim 21, wherein the laser light that has passed through the through-hole is absorbed by a damper.

27. The method for manufacturing a display according to any one of claims 21 to 26, wherein the laser light is laser light having a wavelength of 500 nm or less generated by the semiconductor laser light source.

28. A method for manufacturing a display described in any one of claims 21 to 27, wherein laser light from the semiconductor laser light source is incident on the optical system unit via an optical fiber.

29. A method for manufacturing a display described in any one of claims 21 to 28, wherein the drive stage movably holds a plurality of the optical system units.

30. The method for manufacturing a display according to any one of claims 21 to 29, wherein the laser light is scanned by an optical scanner provided in the optical system unit.

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