Plasma processing equipment

Abstract

To improve uniformity of plasma processing.SOLUTION: A plasma processing device comprises a chamber, a window member, a gas introduction port, and an antenna. The chamber accommodates a substrate. The window member constitutes an upper part of the chamber. The gas introduction port is installed on either a side wall of the chamber or the window member, and supplies a gas to the inside of the chamber. The antenna is installed upward of the chamber via the window member, and is formed from an electro-conductive material and is formed in a linear shape. The antenna irradiates the inside of the chamber with RF electric power, thereby causing the gas supplied to the inside of the chamber to be plasmatized. The antenna has a first coil and a plurality of second coils. The first coil is supplied with RF electric power. The second coils are formed in the same shape, and are arranged in multiple around the first coil in rotational symmetry around a center axis of the first coil. A variable capacitance capacitor is connected one each at the respective ends of the second coils.SELECTED DRAWING: Figure 8

Description

[Technical Field]

[0001] Various aspects and embodiments of the present disclosure relate to plasma processing apparatuses. [Background technology]

[0002] In plasma processes, process uniformity is an important factor in improving yield. With the recent advances in miniaturization of semiconductor devices and the increasing diameter of semiconductor substrates, process uniformity has become increasingly important. Patent Document 1 listed below discloses a technology for controlling the distribution of plasma in a chamber by providing multiple antenna coils facing the substrate. [Prior art documents] [Patent documents]

[0003] [Patent Document 1] Patent No. 5227245 Summary of the Invention [Problem to be solved by the invention]

[0004] The present disclosure provides a plasma processing apparatus capable of improving the uniformity of plasma processing. [Means for solving the problem]

[0005] One aspect of the present disclosure is a plasma processing apparatus including a chamber, a window member, a gas inlet, and an antenna. The chamber accommodates a substrate. The window member forms an upper portion of the chamber. The gas inlet is provided in at least one of a sidewall of the chamber and the window member, and supplies gas into the chamber. The antenna is provided above the chamber via the window member and is formed linearly from a conductive material. The antenna converts the gas supplied into the chamber into plasma by radiating RF (Radio Frequency) power into the chamber. The antenna has a first coil and multiple second coils. RF power is supplied to the first coil. The multiple second coils are formed in the same shape and are arranged around the first coil in rotational symmetry around the central axis of the first coil. One end of each second coil is connected to a variable capacitor. [Effects of the Invention]

[0006] According to various aspects and embodiments of the present disclosure, the uniformity of plasma processing can be improved. [Brief explanation of the drawings]

[0007] [Figure 1] FIG. 1 is a schematic cross-sectional view illustrating an example of a plasma processing system according to an embodiment of the present disclosure. [Figure 2] FIG. 2 is a plan view showing an example of the shape and arrangement of the antenna. [Figure 3] FIG. 3 is a plan view showing another example of the shape and arrangement of the second coil. [Figure 4] FIG. 4 is a plan view showing another example of the shape and arrangement of the second coil. [Figure 5] FIG. 5 is a plan view showing another example of the shape and arrangement of the second coil. [Figure 6] FIG. 6 is a plan view showing another example of the shape and arrangement of the second coil. [Figure 7] FIG. 7 is a connection diagram showing an example of a circuit configuration of an antenna in the first embodiment. [Figure 8] FIG. 8 is a connection diagram showing an example of a circuit configuration of an antenna in the second embodiment. [Figure 9] FIG. 9 is a connection diagram showing an example of a circuit configuration of an antenna according to the third embodiment. [Figure 10] FIG. 10 is a diagram showing an example of the distance between the end of the second coil and the window member. DETAILED DESCRIPTION OF THE INVENTION

[0008] DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS Preferred embodiments of the plasma processing apparatus will be described in detail below with reference to the accompanying drawings. However, the plasma processing apparatus is not limited to the following embodiments.

[0009] The present disclosure provides techniques that can further improve the uniformity of plasma processing.

[0010] (First embodiment) [Configuration of Plasma Processing System 100] An exemplary configuration of a plasma processing system 100 will be described below. FIG. 1 is a schematic cross-sectional view illustrating an example of a plasma processing system 100 according to an embodiment of the present disclosure. The plasma processing system 100 includes an inductively coupled plasma processing apparatus 1 and a control unit 2. The plasma processing apparatus 1 includes a plasma processing chamber 10, a gas supply unit 20, a power supply 30, and an exhaust system 40. The plasma processing chamber 10 includes a window member 101 constituting an upper portion of the plasma processing chamber 10. In this embodiment, the window member 101 is made of a dielectric material such as quartz or ceramic. The window member 101 may also be made of a metal (conductor) such as aluminum or a semiconductor such as silicon. The plasma processing apparatus 1 also includes a substrate support 11, a gas introduction unit, and an antenna 50. The substrate support 11 is disposed within the plasma processing chamber 10. The antenna 50 is disposed above the plasma processing chamber 10 via the window member 101 and is linearly formed from a conductive material such as copper. The antenna 50 is disposed rotationally symmetrically about a central axis X. "Rotational symmetry" is a type of symmetry that characterizes a figure, where a figure overlaps with itself when rotated (360 / n) degrees around a certain center, where n is an integer greater than or equal to 2. Antenna 50 converts gas supplied into plasma processing chamber 10 into plasma by radiating RF power into plasma processing chamber 10. Plasma processing chamber 10 has a plasma processing space 10s defined by window member 101, sidewall 102 of plasma processing chamber 10, and substrate support 11. Plasma processing chamber 10 has at least one gas supply port for supplying at least one processing gas to plasma processing space 10s and at least one gas exhaust port for exhausting gas from the plasma processing space.

[0011] The substrate support unit 11 includes a main body 111 and a ring assembly 112. The main body 111 has a substrate support surface 111a, which is a central region for supporting the substrate W, and a ring support surface 111b, which is an annular region for supporting the ring assembly 112. The substrate W is sometimes called a wafer. The ring support surface 111b of the main body 111 surrounds the substrate support surface 111a of the main body 111 in a plan view. The substrate W is placed on the substrate support surface 111a of the main body 111, and the ring assembly 112 is placed on the ring support surface 111b of the main body 111 so as to surround the substrate W on the substrate support surface 111a of the main body 111.

[0012] In one embodiment, the main body 111 includes a base 1110 and an electrostatic chuck 1111. The base includes a conductive member. The conductive member of the base 1110 functions as a lower electrode. The electrostatic chuck 1111 is disposed on the base 1110. The upper surface of the electrostatic chuck 1111 is a substrate support surface 111a. The ring assembly 112 includes one or more annular members. At least one of the one or more annular members is an edge ring. Although not shown, the substrate support 11 may also include a temperature control module configured to adjust at least one of the electrostatic chuck 1111, the ring assembly 112, and the substrate W to a target temperature. The temperature control module may include a heater 1111a, a heat transfer medium, a flow path 1110a, or a combination thereof. A heat transfer fluid such as brine or gas flows through the flow path 1110a. The substrate support 11 may also include a heat transfer gas supply unit configured to supply a heat transfer gas between the back surface of the substrate W and the substrate support surface 111a.

[0013] The gas inlet is configured to introduce at least one process gas from the gas supply unit 20 into the plasma processing space 10s. In one embodiment, the gas inlet includes a center gas injector (CGI) 13. The center gas injector 13 is disposed above the substrate support 11 and attached to a central opening formed in the window member 101. The center gas injector 13 has at least one gas supply port 13a, at least one gas flow path 13b, and at least one gas inlet port 13c. The process gas supplied to the gas supply port 13a passes through the gas flow path 13b and is introduced into the plasma processing space 10s from the gas inlet port 13c. Note that the gas inlet may include one or more side gas injectors (SGIs) attached to one or more openings formed in the sidewall 102 in addition to or instead of the center gas injector 13. The side gas injectors are an example of a gas inlet.

[0014] The gas supply 20 may include at least one gas source 21 and at least one flow controller 22. In one embodiment, the gas supply 20 is configured to supply at least one process gas from a respective gas source 21 through a respective flow controller 22 to the central gas inlet 13. Each flow controller 22 may include, for example, a mass flow controller or a pressure-controlled flow controller. Additionally, the gas supply 20 may include one or more flow modulation devices to modulate or pulse the flow rate of the at least one process gas.

[0015] The power supply 30 includes an RF (Radio Frequency) power supply 31 coupled to the plasma processing chamber 10 via at least one impedance matching circuit. The RF power supply 31 is configured to supply at least one RF signal, such as a source RF signal and a bias RF signal, to the antenna 50, or to the antenna 50 and a conductive member of the substrate support 11. The RF signal may also be referred to as RF power. This generates a plasma from at least one process gas supplied to the plasma processing space 10s. Thus, the RF power supply 31 may function as at least a part of a plasma generating unit configured to generate a plasma from one or more process gases in the plasma processing chamber 10. Furthermore, supplying a bias RF signal to the conductive member of the substrate support 11 generates a bias potential on the substrate W, thereby attracting ions in the formed plasma to the substrate W.

[0016] In one embodiment, the RF power supply 31 includes a first RF generating unit 31a and a second RF generating unit 31b. The first RF generating unit 31a is coupled to the antenna 50 and configured to generate a source RF signal for plasma generation via at least one impedance matching circuit. The source RF signal may be referred to as source RF power. In one embodiment, the source RF signal has a frequency in the range of 13 MHz to 150 MHz. In one embodiment, the first RF generating unit 31a may be configured to generate multiple source RF signals having different frequencies. The generated one or more source RF signals are supplied to the antenna 50. The second RF generating unit 31b is coupled to a conductive member of the substrate support 11 via at least one impedance matching circuit and configured to generate a bias RF signal. The bias RF signal may be referred to as bias RF power. In one embodiment, the bias RF signal has a lower frequency than the source RF signal. In one embodiment, the bias RF signal has a frequency in the range of 400 kHz to 13.56 MHz. In one embodiment, the second RF generator 31b may be configured to generate multiple bias RF signals having different frequencies. The generated bias RF signals are supplied to the conductive members of the substrate support 11. In various embodiments, at least one of the source RF signal and the bias RF signal may be pulsed.

[0017] The power supply 30 may also include a DC power supply 32 coupled to the plasma processing chamber 10. The DC power supply 32 includes a bias DC generator 32a. In one embodiment, the bias DC generator 32a is connected to a conductive member of the substrate support 11 and configured to generate a bias DC signal. The generated bias DC signal is applied to the conductive member of the substrate support 11. In one embodiment, the bias DC signal may be applied to another electrode, such as an electrode in the electrostatic chuck 1111. In various embodiments, the bias DC signal may be pulsed. Note that the bias DC generator 32a may be provided in addition to the RF power supply 31 or may be provided instead of the second RF generator 31b.

[0018] The exhaust system 40 may be connected to a gas outlet 10e provided at the bottom of the plasma processing chamber 10, for example. The exhaust system 40 may include a pressure regulating valve and a vacuum pump. The pressure regulating valve regulates the pressure in the plasma processing space 10s. The vacuum pump may include a turbomolecular pump, a dry pump, or a combination thereof.

[0019] The controller 2 processes computer-executable instructions that cause the plasma processing apparatus 1 to perform various processes described in this disclosure. The controller 2 may be configured to control each element of the plasma processing apparatus 1 to perform various processes described herein. In one embodiment, part or all of the controller 2 may be included in the plasma processing apparatus 1. The controller 2 may include, for example, a computer 2a. The computer 2a may include, for example, a processing unit (CPU: Central Processing Unit) 2a1, a storage unit 2a2, and a communication interface 2a3. The processing unit 2a1 may be configured to perform various control operations based on programs stored in the storage unit 2a2. The storage unit 2a2 may include a random access memory (RAM), a read-only memory (ROM), a hard disk drive (HDD), a solid state drive (SSD), or a combination thereof. The communication interface 2a3 may communicate with the plasma processing apparatus 1 via a communication line such as a local area network (LAN).

[0020] [Configuration of Antenna 50] FIG. 2 is a plan view showing an example of the shape and arrangement of the antenna 50. The antenna 50 has an inner coil 51 and an outer coil 52. The inner coil 51 is an example of a first coil. In this embodiment, the inner coil 51 and the outer coil 52 are arranged in the same plane (e.g., a horizontal plane) that intersects with the central axis X. However, the disclosed technology is not limited to this, and the inner coil 51 and the outer coil 52 may be arranged in different planes. Alternatively, at least a portion of the inner coil 51 and the outer coil 52 may be arranged in a plane different from the plane in which the inner coil 51 and the outer coil 52 are arranged.

[0021] The inner coil 51 is supplied with RF power from the power supply 30. The inner coil 51 generates a magnetic field using the RF power supplied from the power supply 30, and the generated magnetic field inductively couples with the outer coil 52. The inner coil 51 then radiates a portion of the RF power supplied from the power supply 30 into the plasma processing chamber 10, and supplies the other portion to the outer coil 52. In this embodiment, the inner coil 51 has a coil 51a and a coil 51b that are spaced apart from each other. The coil 51a and the coil 51b are arranged rotationally symmetrically about the central axis X. That is, the inner coil 51 has a shape that is rotationally symmetrical about the central axis X.

[0022] 2, the coils 51a and 51b are each formed in a spiral shape with the central axis X as the center and making 1.5 turns around the central axis X. In addition, in the example of FIG. 2, the outermost end of the coil 51a is disposed opposite the outermost end of the coil 51b with respect to the central axis X, and the innermost end of the coil 51a is disposed opposite the innermost end of the coil 51b with respect to the central axis X. This makes it possible to mitigate the influence of discontinuous electromagnetic waves radiated from the ends of the coils 51a and 51b on the plasma formed in the plasma processing space 10s.

[0023] 2, inner coil 51 has two spirally formed coils 51a and 51b, but the disclosed technology is not limited to this. The coils constituting inner coil 51 may have a linear, bent-line, curved, radial, polygonal, or combination thereof shape as long as they have a shape that is rotationally symmetric about central axis X.

[0024] The outer coil 52 includes a plurality of coils 52a, 52b, 52c, and 52d formed in the same shape. The coils 52a to 52d are an example of a second coil. The coils 52a to 52d are arranged rotationally symmetrically around the inner coil 51, with the central axis X of the inner coil 51 as the center. Each of the coils 52a to 52d is inductively coupled to the inner coil 51 and radiates RF power into the plasma processing space 10s in response to the RF power supplied from the inner coil 51. In the example of FIG. 2, four coils 52a to 52d are arranged rotationally symmetrically around the inner coil 51, but the disclosed technology is not limited to this. As long as a plurality of coils are arranged rotationally symmetrically around the inner coil 51, the number of coils constituting the outer coil 52 may be less than four or more than four. The number of coils may be an even number or an odd number.

[0025] Moreover, in this embodiment, each of the coils 52a to 52d is curved and arranged around the inner coil 51 with a convex orientation in a direction away from the inner coil 51. In the example of Fig. 2, the coil 52a is arranged around the inner coil 51 with a convex orientation in a direction A away from the inner coil 51, and the coil 52b is arranged around the inner coil 51 with a convex orientation in a direction B away from the inner coil 51. Similarly, the coil 52c is arranged around the inner coil 51 with a convex orientation in a direction C away from the inner coil 51, and the coil 52d is arranged around the inner coil 51 with a convex orientation in a direction D away from the inner coil 51.

[0026] 2, each of the coils 52a to 52d of the outer coil 52 has a curved shape, but the disclosed technology is not limited to this. As long as each of the coils 52a to 52d of the outer coil 52 has the same shape, it may be a straight line, a bent line, a curved line, a radial line, a polygonal line, or a combination of these.

[0027] For example, the coils 52a to 52d of the outer coil 52 may be arranged around the inner coil 51 along a circumference centered on the central axis X, as shown in Fig. 3. Furthermore, the coils 52a to 52d may be arranged such that the ends of adjacent coils overlap in the circumferential direction centered on the central axis X, as shown in Fig. 4. Furthermore, the coils 52a to 52d may be arranged such that adjacent coils partially overlap, as shown in Fig. 5.

[0028] Alternatively, as shown in Fig. 6, each of the coils 52a to 52d may be formed in a spiral shape with 1.25 turns around the central axis X. In the example of Fig. 6, each of the coils 52a to 52d is disposed at an angle of 90° around the central axis X. This reduces the effect of discontinuous electromagnetic waves radiated from the ends of the coils 52a to 52d on the plasma generated in the plasma processing space 10s.

[0029] 3 to 6, the region where the inner coil 51 is arranged is indicated by hatching. Although variations in the shape of the outer coil 52 are described in FIGS. 3 to 6, the variations in the shape of the antenna disclosed in FIGS. 3 to 6 can also be applied to the inner coil 51.

[0030] [Circuit configuration of antenna 50] 7 is a connection diagram showing an example of the circuit configuration of the antenna 50 according to the first embodiment. One ends of the coils 51a and 51b of the inner coil 51 are connected to the power supply 30, and the other ends of the coils 51a and 51b are grounded via the capacitor 510.

[0031] A variable capacitor is connected to each of the coils 52a to 52d of the outer coil 52. In the example of FIG. 7, end 520a, which is one end of coil 52a, is grounded via variable capacitor 53a. End 521a, which is the other end of coil 52a, is grounded. End 520b, which is one end of coil 52b, is grounded via variable capacitor 53b. End 521b, which is the other end of coil 52b, is grounded. End 520c, which is one end of coil 52c, is grounded via variable capacitor 53c. End 521c, which is the other end of coil 52c, is grounded. End 520d, which is one end of coil 52d, is grounded via variable capacitor 53d. End 521d, which is the other end of coil 52d, is grounded. Note that end 520a, end 520b, end 520c, and end 520d may each be grounded via a capacitor with a fixed capacitance.

[0032] By adjusting the capacitance of the variable capacitors 53a-53d, the current flowing through each of the coils 52a-52d can be adjusted. The capacitance of each of the variable capacitors 53a-53d can be individually adjusted by, for example, the control unit 2. By adjusting the current flowing through each of the coils 52a-52d, the density of the plasma formed in the plasma processing space 10s below each of the coils 52a-52d can be adjusted. For example, by increasing or decreasing the current flowing through each of the coils 52a-52d by the same amount, the radial distribution of plasma density about the central axis X can be adjusted. Furthermore, for example, by adjusting the current flowing through each of the coils 52a-52d to have different values, the circumferential distribution of plasma density about the central axis X can be adjusted.

[0033] The first embodiment has been described above. As is clear from the above description, the plasma processing apparatus 1 of this embodiment includes a plasma processing chamber 10, a window member 101, a gas inlet 13c, and an antenna 50. The plasma processing chamber 10 accommodates a substrate W. The window member 101 forms the upper portion of the plasma processing chamber 10. The gas inlet 13c is provided in at least one of the sidewall of the plasma processing chamber 10 and the window member 101, and supplies gas into the plasma processing chamber 10. The antenna 50 is provided above the plasma processing chamber 10 via the window member 101 and is formed in a linear shape from a conductive material. The antenna 50 converts gas supplied into the plasma processing chamber 10 into plasma by radiating RF power into the plasma processing chamber 10. The antenna 50 includes an inner coil 51 and multiple coils 52a to 52d. RF power is supplied to the inner coil 51. The coils 52a to 52d are formed in the same shape and are arranged around the inner coil 51 in rotational symmetry with respect to the central axis X of the inner coil 51. One end of each of the coils 52a to 52d is connected to a variable capacitor. The plasma processing apparatus 1 having such a configuration can improve the uniformity of the plasma processing.

[0034] In the first embodiment described above, the other end of each of the coils 52a to 52d is grounded. One end of each of the variable capacitors 53a to 53d is connected to the corresponding coil 52a to 52d, and the other end is grounded. This allows the current flowing through each of the coils 52a to 52d to be individually adjusted by adjusting the capacitance of each of the variable capacitors 53a to 53d.

[0035] In the first embodiment described above, the inner coil 51 has a shape that is rotationally symmetric about the central axis X. This allows the magnetic field to be radiated more uniformly into the plasma processing chamber 10, thereby improving the uniformity of the plasma processing.

[0036] In the first embodiment described above, the inner coil 51 includes a plurality of coils 51a and 51b spaced apart from each other, which allows the magnetic field to be radiated more uniformly within the plasma processing chamber 10, thereby improving the uniformity of the plasma processing.

[0037] Furthermore, in the first embodiment described above, each of the coils 52a to 52d is curved and arranged around the inner coil 51 with its protrusion directed in a direction away from the inner coil 51. This allows the magnitude of the magnetic field radiated downward from each of the variable capacitors 53a to 53 to be individually adjusted with high precision.

[0038] In the first embodiment described above, the inner coil 51 and the coils 52a to 52d are arranged in the same plane intersecting the central axis X. This allows the distribution of the magnetic field radiated into the plasma processing chamber 10 to be adjusted with high precision.

[0039] (Second embodiment) In the second embodiment, both ends of each coil of the outer coil 52 are connected via a variable capacitor. FIG. 8 is a connection diagram showing an example of the circuit configuration of the antenna 50 in the second embodiment. For example, as shown in FIG. 8, ends 520a and 521a of coil 52a are connected via variable capacitor 53a, and ends 520b and 521b of coil 52b are connected via variable capacitor 53b. Ends 520c and 521c of coil 52c are connected via variable capacitor 53c, and ends 520d and 521d of coil 52d are connected via variable capacitor 53d. Even in the antenna 50 configured as shown in FIG. 8, the current flowing through each of the coils 52a to 52d can be adjusted by adjusting the capacitance of the variable capacitors 53a to 53d.

[0040] 8, the potential difference between the plasma generated in the plasma processing space 10s and each of the coils 52a to 52d can be reduced, thereby suppressing capacitive coupling between the plasma generated in the plasma processing space 10s and each of the coils 52a to 52d.

[0041] (Third embodiment) In the third embodiment, one end of each coil of the outer coil 52 is grounded via a variable capacitor, and the other end is open. FIG. 9 is a connection diagram showing an example of the circuit configuration of the antenna 50 in the third embodiment. For example, as shown in FIG. 9, an end 520a of the coil 52a is grounded via a variable capacitor 53a, and an end 521a is open. An end 520b of the coil 52b is grounded via a variable capacitor 53b, and an end 521b is open. An end 520c of the coil 52c is grounded via a variable capacitor 53c, and an end 521c is open. An end 520d of the coil 52d is grounded via a variable capacitor 53d, and an end 521d is open. Even in the antenna 50 configured as shown in FIG. 9, the current flowing through each of the coils 52a to 52d can be adjusted by adjusting the capacitance of the variable capacitors 53a to 53d.

[0042] Furthermore, in the antenna 50 configured as shown in FIG. 9, the voltage at the open end of each of the coils 52a-52d is high. This allows plasma to be ignited even under conditions where plasma ignition is difficult, such as a low-pressure environment. However, if the potential difference between the plasma generated in the plasma processing space 10s and the coils 52a-52d becomes large, capacitive coupling may occur between the plasma and the coils 52a-52d, causing the plasma to enter a capacitively coupled mode. Therefore, it is preferable that the open end of each of the coils 52a-52d be positioned away from the center of the plasma processing space 10s in the direction of the central axis X.

[0043] 9, for example, a distance L2 between the end 521a of the coil 52a and the inner coil 51 in the direction of the central axis X is longer than a distance L1 between the end 520a of the coil 52a and the inner coil 51. The same applies to the coils 52b to 52d. The inner coil 51 is disposed approximately in the center of the plasma processing space 10s in the direction of the central axis X. As described above, in this embodiment, the open ends (ends 521a to 521d) of the coils 52a to 52d are disposed farther from the inner coil 51 than the ends (ends 520a to 520d) of the coils 52a to 52d. This makes it possible to suppress the influence of capacitive coupling between the ends of the coils 52a to 52d and the plasma generated in the plasma processing space 10s.

[0044] Furthermore, in the third embodiment, the voltage at the open ends of each of the coils 52a to 52d increases, and the strength of the electric field radiated from the open ends increases. As a result, charged particles such as ions are attracted near the open ends by the electric fields radiated from each of the coils 52a to 52d, and the attracted charged particles may sputter the window member 101 near the open ends. This may cause particles to be generated from the window member 101 near the open ends.

[0045] 10, for example, it is preferable that the distance D2 between the end 521a, which is the open end of the coil 52a, and the window member 101 be longer than the distance D1 between the end 520a of the coil 52a and the window member 101. The same applies to the coils 52b to 52d. That is, it is preferable that the open ends (ends 521a to 521d) of the respective coils 52a to 52d are disposed farther from the window member 101 than the ends (ends 520a to 520d) of the respective coils 52a to 52d to which the variable capacitors are connected. This makes it possible to suppress particles generated from the window member 101.

[0046] [others] The present disclosure is not limited to the above-described embodiment, and various modifications are possible within the scope of the gist thereof.

[0047] For example, in each of the above-described embodiments, a device for measuring the state of plasma formed in the plasma processing space 10s may be provided, and the capacitance of each of the variable capacitors 53a-53d may be adjusted based on the measured state of the plasma. For example, if there is a bias in the measured plasma distribution, the capacitance of each of the variable capacitors 53a-53d may be adjusted so that a current that suppresses the bias flows through the coils 52a-52d. Such control is achieved, for example, by the control unit 2.

[0048] Furthermore, if a process bias is detected on the substrate W in the previous process, a biased plasma distribution that generates a bias opposite to the process bias may be intentionally generated in the plasma processing apparatus 1. This makes it possible to suppress the process bias as a whole in a semiconductor device manufactured through multiple processes, thereby improving the quality of the semiconductor device.

[0049] It should be noted that the disclosed embodiments are illustrative in all respects and should not be considered limiting. Indeed, the above-described embodiments may be embodied in various forms. Furthermore, the above-described embodiments may be omitted, substituted, or modified in various forms without departing from the scope and spirit of the appended claims. [Explanation of symbols]

[0050] X center axis W substrate 100 Plasma Processing System 1. Plasma processing equipment 10 Plasma Processing Chamber 10e Gas outlet 10s Plasma treatment space 101 Window components 102 Side wall 11 Substrate support 111 Main body 111a Board support surface 111b Ring support surface 1110 Foundation 1110a flow channel 1111 Electrostatic chuck 1111a heater 112 Ring Assembly 13 Central gas injection section 13a Gas supply port 13b Gas flow path 13c Gas inlet 20 Gas supply unit 21 Gas Source 22 Flow Controller 30 power supply 31 RF power supply 31a First RF generation unit 31b Second RF generation unit 32 DC power supply 32a Bias DC generator 40 Exhaust System 50 Antennas 51 Inner coil 51a Coil 51b coil 510 capacitor 52 outer coil 520 End 521 End 52a coil 52b coil 52c coil 52d coil 53a variable capacitor 53b variable capacitor 53c variable capacitor 53d Variable Capacitor 2. Control Unit 2a Computer 2a1 Processing section 2a2 Storage section 2a3 communication interface

Claims

1. a chamber for housing a substrate; a window member constituting an upper portion of the chamber; a gas inlet provided in at least one of the sidewall of the chamber and the window member, for supplying a gas into the chamber; an antenna that is provided above the chamber via the window member and is formed in a linear shape from a conductive material, and that converts a gas supplied into the chamber into plasma by radiating RF (Radio Frequency) power into the chamber; Equipped with The antenna is a first coil connected to an RF power supply that supplies RF power, and to which the RF power is supplied from the RF power supply; a plurality of second coils formed in the same shape, arranged rotationally symmetrically around the central axis of the first coil, and inductively coupled to the first coil; and the plurality of second coils are not connected to the RF power source and any other RF power source other than the RF power source; A variable capacitor is connected to one end of each of the second coils, The other end of each of the second coils is grounded, one end of each of the variable capacitors is connected to one end of the second coil; The other end of each of the variable capacitors is grounded.

2. a chamber for housing a substrate; a window member constituting an upper portion of the chamber; a gas inlet provided in at least one of the sidewall of the chamber and the window member, for supplying a gas into the chamber; an antenna that is provided above the chamber via the window member and is formed in a linear shape from a conductive material, and that converts a gas supplied into the chamber into plasma by radiating RF (Radio Frequency) power into the chamber; Equipped with The antenna is a first coil connected to an RF power supply that supplies RF power, and to which the RF power is supplied from the RF power supply; a plurality of second coils formed in the same shape, arranged rotationally symmetrically around the central axis of the first coil, and inductively coupled to the first coil; and the plurality of second coils are not connected to the RF power source and any other RF power source other than the RF power source; A variable capacitor is connected to one end of each of the second coils, the other end of each of the second coils is grounded via a capacitor; one end of each of the variable capacitors is connected to one end of the second coil; The other end of each of the variable capacitors is grounded.

3. a chamber for housing a substrate; a window member constituting an upper portion of the chamber; a gas inlet provided in at least one of the sidewall of the chamber and the window member, for supplying a gas into the chamber; an antenna that is provided above the chamber via the window member and is formed in a linear shape from a conductive material, and that converts a gas supplied into the chamber into plasma by radiating RF (Radio Frequency) power into the chamber; Equipped with The antenna is a first coil connected to an RF power supply that supplies RF power, and to which the RF power is supplied from the RF power supply; a plurality of second coils formed in the same shape, arranged rotationally symmetrically around the central axis of the first coil, and inductively coupled to the first coil; and the plurality of second coils are not connected to the RF power source and any other RF power source other than the RF power source; A variable capacitor is connected to one end of each of the second coils, The other end of each of the second coils is open, In the plasma processing apparatus, one end of each of the second coils is grounded via the corresponding variable capacitor.

4. The other end of each of the second coils is The second coil is disposed at a position farther from the first coil than one end of the second coil. The plasma processing apparatus according to claim 3 .

5. The other end of each of the second coils is The second coil is disposed at a position farther from the window member than one end of the second coil. The plasma processing apparatus according to claim 4 .

6. a chamber for housing a substrate; a window member constituting an upper portion of the chamber; a gas inlet provided in at least one of the sidewall of the chamber and the window member, for supplying a gas into the chamber; an antenna that is provided above the chamber via the window member and is formed in a linear shape from a conductive material, and that converts a gas supplied into the chamber into plasma by radiating RF (Radio Frequency) power into the chamber; Equipped with The antenna is a first coil connected to an RF power supply that supplies RF power, and to which the RF power is supplied from the RF power supply; a plurality of second coils formed in the same shape, arranged rotationally symmetrically around the central axis of the first coil, and inductively coupled to the first coil; and the plurality of second coils are not connected to the RF power source and any other RF power source other than the RF power source; A variable capacitor is connected to one end of each of the second coils, In the plasma processing apparatus, each of the second coils is curved and arranged around the first coil so as to be convex in a direction away from the first coil.

7. the first coil has a shape that is rotationally symmetric about the central axis; The plasma processing apparatus according to claim 1 .

8. The first coil has a plurality of coils spaced apart from one another. The plasma processing apparatus according to claim 1 .

9. the first coil and each of the second coils are arranged in the same plane; The plasma processing apparatus according to claim 1 .

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