Discharge cell for generating ozone gas and method for manufacturing the same

By integrating ribs and dielectric made of aluminum oxide and forming them through blasting or etching, the discharge cell achieves precise flatness without lapping, simplifying the manufacturing process and reducing damage.

JP7789248B1Active Publication Date: 2025-12-19SUMITOMO PRECISION PRODUCTS CO LTD
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Patent Information

Application Number
JP2025054324
Authority / Receiving Office
JP · JP
Patent Type
Patents
Current Assignee / Owner
Filing Date
2025-03-27
Publication Date
2025-12-19
Estimated Expiration
2045-03-27

AI Technical Summary

Technical Problem

The precision of flatness in discharge cells is insufficient when ribs are formed using screen printing, necessitating additional lapping steps to achieve the desired height, which complicates the manufacturing process.

Method used

The discharge cell integrates ribs and dielectric made of the same aluminum oxide, formed through blasting or etching to create recesses and ribs, eliminating the need for lapping and ensuring precision.

Benefits of technology

This method simplifies the manufacturing process by eliminating the need for lapping, ensuring precise flatness and reducing the risk of damage to the dielectric.

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Abstract

To simplify the manufacturing process of a discharge cell for generating ozone gas while maintaining precision. [Solution] The discharge cell (24) that generates ozone gas by silent discharge comprises a pair of opposing electrodes (31), at least one dielectric (32) formed between the pair of opposing electrodes (31), and a discharge gap (G) formed between the electrode (31) and the dielectric (32) or between the pair of dielectrics (32) and through which oxygen gas passes. The at least one dielectric (32) has a recess (43) that forms the discharge gap (G) and a rib (42) that faces the electrode (31) or another dielectric (32). The dielectric (32) and the rib (42) are made of the same aluminum oxide and are integrally formed.
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Description

[Technical Field]

[0001] The present invention relates to a discharge cell for generating ozone gas and a method for manufacturing the same. [Background technology]

[0002] Ozone gas generators that generate ozone gas using oxygen gas as a raw material are widely used in semiconductor manufacturing processes and the like.

[0003] Patent Document 1 discloses an ozone gas generator having a silent discharge type discharge cell. In the discharge cell, a dielectric is laminated on the inside of each of a pair of electrodes connected to a power source. When a voltage is applied from the power source to the pair of electrodes, a silent discharge occurs in the discharge gap between the dielectrics, generating ozone gas.

[0004] The dielectric gap is formed between the dielectrics arranged facing each other with a fixed gap therebetween by sandwiching a rib therebetween, which is formed by, for example, screen printing. [Prior art documents] [Patent documents]

[0005] [Patent Document 1] Japanese Patent Application Laid-Open No. 2011-051865 Summary of the Invention [Problem to be solved by the invention]

[0006] When screen printing is used to form ribs in discharge cells, the precision of flatness (height at each location) is insufficient. Therefore, the ribs are formed higher than necessary using screen printing, and then lapping (flattening by polishing) is performed to achieve the desired height. However, the need for lapping increases the number of manufacturing steps.

[0007] An object of the present disclosure is to provide a discharge cell that can ensure flatness and simplify the manufacturing process, and a method for manufacturing the same. [Means for solving the problem]

[0008] The discharge cell of the present disclosure is a discharge cell that generates ozone gas by silent discharge, and includes a pair of opposing electrodes, at least one dielectric formed between the pair of opposing electrodes, and a discharge gap formed between the electrode and the dielectric or between the pair of dielectrics, through which oxygen gas passes. The at least one dielectric includes a recess that forms the discharge gap, and a rib that faces the electrode or another dielectric. The dielectric and the rib are made of the same aluminum oxide and are formed integrally.

[0009] The ozone gas generator of the present disclosure includes the above-described discharge cell and an oxygen supply source that supplies high-purity oxygen to the discharge cell.

[0010] The method for manufacturing a discharge cell of the present disclosure includes the steps of forming a mask having an opening on one surface of a dielectric, and forming a recess in the opening of the mask in the dielectric by blasting or etching, and forming a rib in the portion covered by the mask. [Effects of the Invention]

[0011] According to the discharge cell and manufacturing method thereof disclosed herein, recesses and ribs are formed in the dielectric by blasting or etching, so lapping is not required, ensuring precision and simplifying the manufacturing process. [Brief explanation of the drawings]

[0012] [Figure 1] FIG. 1 is a diagram illustrating a schematic example of an ozone gas generator according to the present disclosure. [Figure 2] FIG. 2 is a cross-sectional view that schematically shows the ozone gas generating unit of the present disclosure, particularly the discharge cell thereof. [Figure 3] FIG. 3 is a cross-sectional view taken along line III-III in FIG. [Figure 4] FIG. 4 is a cross-sectional view taken along line IV-IV in FIG. [Figure 5] FIG. 5 is a diagram illustrating a first method for manufacturing a discharge cell according to the present disclosure. [Figure 6] FIG. 6 is a diagram illustrating the first method for manufacturing the discharge cells, following FIG. [Figure 7] FIG. 7 is a diagram illustrating a second method of manufacturing a discharge cell according to the present disclosure. [Figure 8] FIG. 8 is a diagram illustrating a discharge cell of the first modified example. [Figure 9] FIG. 9 is a diagram illustrating a discharge cell of the second modified example. DETAILED DESCRIPTION OF THE INVENTION

[0013] Hereinafter, embodiments will be described with reference to the accompanying drawings. The following description is merely an example and is not intended to be limiting. Furthermore, modifications can be made as appropriate within the scope of the present invention.

[0014] --Ozone gas generator-- 1 is a schematic diagram of an ozone gas generator 20 according to the present disclosure. The ozone gas generator 20 includes a raw material gas supply unit 21, an ozone gas generation unit 22, and an ozone gas extraction unit 23.

[0015] A raw material gas is supplied to the raw material gas supply unit 21. A supply pipe (not shown) is connected to the raw material gas supply unit 21. The raw material gas supply unit 21 is connected to a raw material gas supply source such as a gas cylinder via the supply pipe. High-purity oxygen gas (99.9% or higher) is used as the raw material gas.

[0016] The ozone gas generator 22 is supplied with the raw material gas from the raw material gas supply unit 21. In the ozone gas generator 22, ozone gas is generated from oxygen gas by silent discharge. The ozone gas generator 22 will be described in detail later.

[0017] The ozone gas extraction unit (23) supplies the ozone gas generated in the ozone gas generation unit (22) to the outside. An extraction pipe (not shown) is connected to the ozone gas extraction unit (23). The ozone gas extracted through the extraction pipe is dissolved in, for example, pure water to generate ozone water. This ozone water is used, for example, to clean silicon wafers in semiconductor manufacturing facilities.

[0018] --Details of the ozone gas generation unit-- 2 to 4 are diagrams showing the ozone gas generation section (22). Fig. 3 corresponds to line III-III in Fig. 2, and Fig. 2 corresponds to line II-II in Fig. 3. Fig. 4 corresponds to line IV-IV in Fig. 3. However, all of these are schematic diagrams, and the dimensions, ratios, etc. do not necessarily correspond, and do not necessarily reflect actual dimensions.

[0019] As shown in Fig. 2, the ozone gas generator (22) includes a silent discharge discharge cell (24) and a power supply (25) connected to the discharge cell (24). The discharge cell (24) has a high-voltage electrode unit (30A) and a low-voltage electrode unit (30B). The high-voltage electrode unit (30A) and the low-voltage electrode unit (30B) are basically configured the same, and are therefore sometimes collectively referred to as electrode units (30). The discharge cell (24) includes at least one pair of such opposing electrode units (30).

[0020] A discharge gap (G) through which oxygen gas flows is formed between the high-voltage side electrode unit (30A) and the low-voltage side electrode unit (30B). The high-voltage side electrode unit (30A) is the electrode unit on the high-voltage side, and the low-voltage side electrode unit (30B) is the electrode unit on the ground side (low-voltage side).

[0021] The power supply (25) is constituted by a high-frequency, high-voltage power supply. The high-voltage electrode unit (30A) has a high-voltage electrode (31A), a high-voltage dielectric (32A), and a high-voltage functional film (33A), which are laminated in this order in the thickness direction. The low-voltage electrode unit (30B) has a low-voltage electrode (31B), a low-voltage dielectric (32B), and a low-voltage functional film (33B), which are laminated in this order in the thickness direction.

[0022] The high-voltage electrode (31A) and the low-voltage electrode (31B) are electrically connected to a power source (25). The high-voltage electrode (31A) and the low-voltage electrode (31B) are formed in a plate or film shape. The high-voltage electrode (31A) and the low-voltage electrode (31B) are positioned opposite to each other with a discharge gap (G) therebetween.

[0023] The high-voltage side dielectric (32A) is formed on the surface of the high-voltage side electrode (31A) facing the discharge gap (G) (the lower surface in FIG. 2). The low-voltage side dielectric (32B) is formed on the surface of the low-voltage side electrode (31B) facing the discharge gap (G) (the upper surface in FIG. 2). The high-voltage side dielectric (32A) and the low-voltage side dielectric (32B) are formed in a plate shape. The high-voltage side dielectric (32A) and the low-voltage side dielectric (32B) are made of an insulating material such as alumina. The high-voltage side dielectric (32A) may cover the high-voltage side electrode (31A). Similarly, the low-voltage side dielectric (32B) may cover the low-voltage side electrode (31B).

[0024] Since the high-voltage side dielectric 32A and the low-voltage side dielectric 32B are basically the same in configuration, they may be collectively referred to as the dielectric 32. Similarly, the high-voltage side electrode 31A and the low-voltage side electrode 31B may be collectively referred to as the electrode 31.

[0025] The dielectric 32 is formed in the shape of a rectangular plate. The dielectric 32 may be obtained by firing high-purity alumina. The thickness of the dielectric 32 is preferably 0.05 to 0.9 mm.

[0026] As shown in Fig. 4, the dielectric (32) has ribs (42) that protrude toward the discharge gap (G). A plurality of recesses (43) are formed in the dielectric (32), and the ribs (42) are formed by the dielectric (32) remaining between the recesses (43). The plurality of ribs (42) are arranged in parallel and at equal intervals along the longitudinal direction of the inlet (51) and outlet (52), which will be described later (see Fig. 3). In addition, along the outer periphery of the dielectric (32), the dielectric (32) remains, similar to the ribs (42), to form a rectangular frame portion (41).

[0027] The two opposing dielectrics (32) are configured such that the top surfaces of the ribs (42) and the top surfaces of the frames (41) face each other via the adhesive layer (63).

[0028] The height of the rib (42) is preferably 50 μm or less, and the interval of the discharge gap (G) is preferably 20 μm or more and 100 μm or less.

[0029] Openings (an inlet (51) and an outlet (52)) are formed in a pair of opposing side edges (upper and lower side edges in FIG. 3 ) of the dielectric (32). The opening on the lower side in FIG. 3 constitutes the inlet (51), and the opening on the upper side in FIG. 3 constitutes the outlet (52). The inlet (51) and the outlet (52) extend along the side edges of the dielectric (32) and penetrate the dielectric (32) in the thickness direction. The inlet (51) is in communication with the raw material gas supply unit (21). The outlet (52) is in communication with the ozone gas extraction unit (23).

[0030] A cooling passage (45) for cooling the ozone gas generator (22) is formed in the other pair of side edges (left and right side edges in FIG. 3) of the dielectric (32). The cooling passage (45) penetrates the dielectric (32) in the thickness direction, and the ozone gas generator (22) is cooled by the refrigerant flowing through the cooling passage (45).

[0031] The recesses (43) formed in the high-voltage side dielectric (32A) and the low-voltage side dielectric (32B) face each other to form a discharge gap (G). The discharge gap (G) communicates with the inlet (51) and the outlet (52). Therefore, oxygen gas flows through the discharge gap (G) in the direction of the white arrow in FIG. 3. The distance between the discharge gaps (G) is preferably 20 μm or more and 100 μm or less.

[0032] A high-voltage-side functional film (33A) is formed on the surface of the high-voltage-side dielectric (32A) facing the discharge gap (G) (the lower surface in FIGS. 2 and 4), more specifically, on the bottom surface of the recess (43). A low-voltage-side functional film (33B) is formed on the surface of the low-voltage-side dielectric (32B) facing the discharge gap (G) (the upper surface in FIGS. 2 and 4), more specifically, on the bottom surface of the recess (43). Therefore, more precisely, the discharge gap (G) is formed between the functional films (33). The high-voltage-side functional film (33A) and the low-voltage-side functional film (33B) have basically the same configuration, and therefore may be collectively referred to as the functional film (33). The functional film (33) is formed in a plate or film shape.

[0033] In the recesses 43, the arithmetic mean roughness Ra of the surface of the dielectric 32 is preferably 0.3 μm or more and 0.4 μm or less. When the surface of the dielectric 32 has an Ra in this range, the adhesion of the functional film 33 formed on the surface is improved. This prevents the functional film from peeling off from the dielectric during ozone gas generation and being mixed into the ozone gas as particles.

[0034] Oxygen gas flows into the upstream side of the discharge gap (G) (for example, the left side in Figure 2). When a high-frequency AC voltage is applied from the power supply (25) to the high-voltage electrode (31A) and the low-voltage electrode (31B), a silent discharge occurs in the discharge gap (G). A large number of electrons are excited by the discharge, generating oxygen radicals such as oxygen atoms, which in turn generates ozone gas. The ozone gas generated in the discharge gap (G) flows out downstream (for example, the right side in Figure 3).

[0035] --Discharge cell manufacturing method-- (First manufacturing method) Next, a method for manufacturing a discharge cell (24) according to the present disclosure will be described. Figures 5 and 6 are diagrams illustrating a first method for manufacturing one electrode unit (30) in a discharge cell (24), and show steps A to F individually. These figures are cross-sectional views showing a range across a rib (42) in the electrode unit (30).

[0036] In the method of this embodiment, a recess 43 is formed on one surface of the dielectric 32 by etching, blasting, or the like, and the remaining portion is used as the rib 42. In order to generate a high concentration of ozone gas, it is desirable to form a small rib to reduce the height of the discharge gap G. In the method of applying a material by screen printing to the dielectric 32 and then lapping it, it is difficult to form a small rib while maintaining the flatness of the top surface, so it is desirable to use etching or blasting as in this embodiment.

[0037] First, the outline of the discharge cell (24) and through holes corresponding to the cooling passages (45), inlet (51), and outlet (52) are cut out from a dielectric sheet. As shown in step A, a mask (62) having an opening (62A) corresponding to the area where the recess (43) will be formed is formed on one side of the cut-out dielectric (32). In addition, in order to process the dielectric (32), one side of the dielectric (32) is releasably adhered to a support substrate (61). This is done using a releasable adhesive, wax, or the like (the adhesive, etc., are not shown in FIG. 5).

[0038] Next, in step B, the dielectric 32 is etched or blasted using the mask 62. As a result, recesses 43 are formed in the portions of the openings 62A that are not covered by the mask 62, and ribs 42 are formed in the portions that are covered by the mask 62.

[0039] From the viewpoint of improving the cooling efficiency of the discharge cells 24 and increasing the amount of ozone gas produced relative to the volume of the discharge cells 24, it is desirable to reduce the thickness of the dielectric 32, which may be, for example, 0.9 mm or less at the recesses 43. It is also desirable that the height of the ribs 42 be 50 μm or less.

[0040] If the dielectric 32 having such a thickness were to be subjected to blasting alone, there is a high possibility that the dielectric 32 would be damaged. In contrast, in this embodiment, the dielectric 32 is blasted while bonded to the support substrate 61, thereby preventing damage to the dielectric 32. The support substrate 61 may be made of a ceramic such as alumina, and preferably has a thickness of 5 mm or more.

[0041] Furthermore, since the height of the discharge gap (G) is small, a high degree of flatness is required for the bottom surface of the recess (43). From the viewpoint of realizing this, it is preferable to fix the dielectric (32) to the support substrate (61) and perform blast processing or the like.

[0042] Here, the surface of the dielectric 32 that forms the bottom surface of the recess 43 has an arithmetic mean roughness Ra of 0.3 μm or more and 0.4 μm or less, which can be achieved by setting the conditions for blasting, etc.

[0043] Next, as shown in step C, the dielectric (32) is peeled off from the support substrate (61) and the mask (62) is removed.

[0044] 6D, a functional film 33 is formed on the surface of the dielectric 32 in the recess 43. The functional film 33 may be formed by forming a material film containing a metal oxide in the recess 43 by, for example, screen printing, and then firing the material film.

[0045] The surface of the dielectric 32 where the functional film 33 is to be formed has an arithmetic mean roughness Ra of 0.3 μm or more and 0.4 μm or less, as described above, which improves the adhesion of the functional film 33 to the surface of the dielectric 32 and prevents peeling, etc., allowing the functional film 33 to be formed stably.

[0046] Next, as shown in step E, an electrode 31 is formed on the other surface of the dielectric 32, opposite the surface on which the rib 42, functional film 33, etc. are formed. The electrode 31 may be formed, for example, by forming a material film containing metal by screen printing and then firing the material film. Thereafter, an adhesive layer 63 is formed on the electrode 31. The adhesive layer 63 may be formed, for example, by forming a material film containing a glass component by screen printing and then firing the material film.

[0047] In step E, a rib adhesive layer 64 is formed on the top surface 42A of the rib 42. The rib adhesive layer 64 may also be formed by forming a material film containing a glass component by screen printing, for example, and then firing the material film.

[0048] The rib adhesive layer (64) may be formed before the electrode (31), after the electrode (31) is formed but before the adhesive layer (63) is formed, or after the adhesive layer (63) is formed.

[0049] Next, in step F, two laminates shown in E of Fig. 6 are prepared and bonded together with the top surfaces (42A) of the ribs (42) facing each other with the rib adhesive layer (64) sandwiched between them. This completes the discharge cell (24) shown in Figs. 2 and 4. The rib adhesive layer (64) may be formed on only one of the top surfaces (42A).

[0050] When ribs are formed on the dielectric 32 as separate members by screen printing or the like, the rib material contains a large amount of glass. The rib adhesive layer 64 also contains a large amount of glass. As a result, when the rib adhesive layer 64 is softened by heating to bond the rib, the screen-printed rib also softens at the same time, which may impair the accuracy of the height of the discharge gap G.

[0051] In contrast, in this embodiment, the rib (42) is integrally formed of the same material as the dielectric (32), and therefore does not soften even at temperatures at which the rib adhesive layer (G) softens. This allows for increased accuracy in the height of the discharge gap (G) in step F.

[0052] In F, a member 65 is also bonded by an adhesive layer 63 to the surface opposite to the discharge gap G. The member G is, for example, an alumina substrate in which a flow path for a refrigerant is formed.

[0053] According to the manufacturing method described above, the ribs (42) can be formed integrally with the dielectric (32) by forming the recesses (43) by blasting or etching. Ribs (42) with the desired precision can be obtained, and lapping of the top surfaces (42A) of the ribs (42) is not necessary. This simplifies the manufacturing process for the discharge cells (24). Even when a thin dielectric (32) (e.g., 0.9 mm or less) is used, damage to the dielectric (32) can be reduced by processing the dielectric (32) while it is adhered to the support substrate (61).

[0054] (Second manufacturing method) Next, a second method for manufacturing the discharge cell 24 will be described. Figure 7 is a diagram for explaining the second manufacturing method, showing steps G to I.

[0055] In the second manufacturing method, instead of bonding the dielectric 32 to the support substrate 61, the recess 43 is formed in a state where the dielectric 32 is fixed to the electrostatic chuck 66. For this purpose, in step G of Fig. 7, an electrode 31 is formed on one surface of the dielectric 32 (the surface opposite to the surface on which the rib 42 is formed). The electrode 31 may be formed by screen printing and firing, as in the first manufacturing method.

[0056] Next, in step H, the dielectric 32 is fixed to the electrostatic chuck 66 via the electrode 31. A mask 62 having an opening 62A is formed on the surface of the dielectric 32 opposite to the electrode 31.

[0057] Next, in step I, the dielectric 32 is etched or blasted using the mask 62. As a result, recesses 43 are formed in the portions of the openings 62A that are not covered by the mask 62, and ribs 42 are formed in the portions that are covered by the mask 62.

[0058] By performing the blasting or etching while the dielectric 32 is fixed to the electrostatic chuck 66, damage to the dielectric 32 can be suppressed, as in the first manufacturing method.

[0059] Thereafter, the mask 62 is removed, and a functional film 33 is formed on the surface of the dielectric 32 in the recess 43. This can be performed in the same manner as described for step D in FIG. 6 in the first manufacturing method. An adhesive layer 63 is formed on the electrode 31, and a rib adhesive layer 64 is formed on the top surface 42A of the rib 42. These steps can be performed in the same manner as described for step E in FIG.

[0060] Thereafter, discharge cells (24) are formed in the same manner as in step F of FIG.

[0061] In the above method, the recesses 43 and the ribs 42 are formed by blasting or etching, eliminating the need for lapping and simplifying the manufacturing process of the discharge cell 24. Furthermore, since the dielectric 32 is fixed to the electrostatic chuck 66 during blasting or etching, damage to the dielectric 32 can be suppressed.

[0062] (First Modification) Fig. 8 is a diagram schematically illustrating a discharge cell (24A) of a first modified example. Like Figs. 5 and 6, Fig. 8 is a cross-sectional view illustrating a range that crosses two ribs (42) in an electrode unit (30).

[0063] The discharge cell (24A) of the first modified example includes a high-voltage electrode unit (30A) and a low-voltage electrode unit (30C). The high-voltage electrode unit (30A) has the same configuration as the high-voltage electrode unit (30A) in FIGS. 2 and 4. In contrast, the low-voltage electrode unit (30C) is the same as the low-voltage electrode unit (30B) in FIGS. 2 and 4 in that it includes an electrode (31), a dielectric (32), and a functional film (33). However, the low-voltage electrode unit (30C) does not include recesses (43) or ribs (42), and the functional film (33) is formed on the flat surface of the dielectric (32). The top surface (42A) of the rib (42) of the high-voltage electrode unit (30A) is bonded to the dielectric (32) in the low-voltage electrode unit (30C) via a rib adhesive layer (64). The functional film (33) in the low-voltage electrode unit (30C) has an opening where the rib (42) is bonded. As a result, a discharge gap (G) is formed in the recess (43) of the high voltage side electrode unit (30A).

[0064] Although the example shown here shows the ribs 42 formed only on the high-voltage electrode unit 30A, the ribs 42 may be formed only on the low-voltage electrode unit 30A. In this case, the recesses 43 and ribs 42 only need to be formed on the dielectric 32 of the high-voltage electrode unit 30A, which simplifies the manufacturing process of the discharge cells ().

[0065] (Second Modification) 9 is a diagram schematically illustrating a discharge cell (24B) of a first modified example. Similar to FIGS. 5 and 6, FIG. 9 is a cross-sectional view illustrating a range that crosses two ribs (42) in an electrode unit (30).

[0066] The discharge cell (24B) of the second modified example includes a high-voltage electrode unit (30A) and a low-voltage electrode unit (30D). The high-voltage electrode unit (30A) has the same configuration as the high-voltage electrode unit (30A) in FIGS. 2 and 4. In contrast, the low-voltage electrode unit (30D) does not include a dielectric or functional film and is composed of an electrode (31). The top surface (42A) of the rib (42) of the high-voltage electrode unit (30A) is adhered to the electrode (31) of the low-voltage electrode unit (30D) via a rib adhesive layer (64). As a result, a discharge gap (G) is formed in the recess (43) of the high-voltage electrode unit (30A). In this modified example, the rib adhesive layer (64) is preferably of room temperature curing type.

[0067] The discharge cell that generates ozone gas by silent discharge may have such a configuration.

[0068] The above-described embodiments may be modified in form and detail without departing from the spirit of the claims. Furthermore, the contents of the embodiments may be combined and substituted as appropriate as long as the functions of the subject matter of the present disclosure are not impaired. [Industrial Applicability]

[0069] According to the present disclosure, the manufacturing process can be simplified, and therefore it is useful as a discharge cell and a manufacturing method thereof. [Explanation of symbols]

[0070] 20 Ozone gas generator 21 Raw material gas supply section 24 discharge cells 31 electrode 32 Dielectric 33 Functional membrane 41 Frame 42 Ribs 42A Top 43 Recess 45 Cooling passage 51 Inlet 52 Outlet 61 Support substrate 62 Mask 62A aperture 66 Electrostatic Chuck

Claims

1. A discharge cell for generating ozone gas by silent discharge, A pair of opposing electrodes; a pair of dielectrics formed between the pair of opposing electrodes; a discharge gap formed between the pair of dielectrics and through which oxygen gas passes; each of the pair of dielectrics includes a recess that forms the discharge gap and a rib that faces the other of the dielectrics; The dielectric and the rib are made of the same aluminum oxide and are integrally formed, A discharge cell characterized in that the top surfaces of the ribs of each of the dielectrics are bonded together via an adhesive layer.

2. In claim 1, A discharge cell, wherein a film containing a metal oxide is formed on the dielectric at least in the recess.

3. In claim 1, A discharge cell, wherein the height of the rib formed on at least one of the dielectrics is 50 μm or less.

4. In claim 1, The discharge cell is characterized in that the arithmetic mean roughness Ra of the surface of the recess is 0.3 μm or more and 0.4 μm or less.

5. In claim 1, A discharge cell characterized in that the thickness of the dielectric is 0.9 mm or less.

6. The discharge cell of claim 1; an oxygen supply source that supplies oxygen with a purity of 99.9% or higher to the discharge cell;

7. A method for manufacturing a discharge cell for generating ozone gas by silent discharge, comprising: forming a mask having an opening on one surface of the dielectric; peelably adhering the surface of the other side of the dielectric to a support substrate; forming recesses in the dielectric at the openings of the mask and forming ribs in the portions covered by the mask by blasting; peeling the dielectric body on which the ribs are formed from the support substrate; and forming a film containing a metal oxide on the dielectric in the recess after peeling the dielectric from the support substrate, The method for manufacturing a discharge cell, wherein the thickness of the dielectric is 0.9 mm or less.

8. A method for manufacturing a discharge cell for generating ozone gas by silent discharge, comprising: forming a mask having an opening on one surface of the dielectric; forming a metal electrode layer on the other surface of the dielectric; fixing the dielectric to an electrostatic chuck via the metal electrode layer, and forming recesses in the dielectric at the openings of the mask and forming ribs in the portions of the dielectric covered by the mask by blasting; The method for manufacturing a discharge cell, wherein the thickness of the dielectric is 0.9 mm or less.

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