Nanorod light emitting device and method for manufacturing the same

Abstract

To provide a nano rod light emitting device that has a centralized current path structure, and a method for manufacturing the same.SOLUTION: A nano rod light emitting device includes: a first semiconductor layer that is doped to a first conductivity type; a light emitting layer that is arranged on the first semiconductor layer; a second semiconductor layer that is arranged on the light emitting layer and is doped to a second conductivity type electrically opposite to the first conductivity type; a conductive layer that is arranged between a center part of a lower part surface of the light emitting layer and the first semiconductor layer or between a center part of an upper part surface of the light emitting layer and the second semiconductor layer; and a current blocking layer that is arranged to surround a side wall of the conductive layer.SELECTED DRAWING: Figure 1

Description

[Technical Field]

[0001] The present invention relates to a nanorod light emitting device and a method for manufacturing the same, and more particularly to a nanorod light emitting device having a centralized current path structure that prevents current from flowing on the surface of the nanorod and allows current to flow through the center of the nanorod, a method for manufacturing the same, and a display device including the nanorod light emitting device. [Background technology]

[0002] Light emitting diodes (LEDs) are known as next-generation light sources having advantages such as a longer lifespan, lower power consumption, faster response speed, and environmental friendliness compared to conventional light sources, and industrial demand for them is increasing due to these advantages. LEDs are typically used in a variety of products, such as lighting devices and backlights for display devices.

[0003] In recent years, ultra-small LEDs at the micro or nano level using II-VI or III-V compound semiconductors have been developed. Micro LED displays, in which these ultra-small LEDs are directly used as light-emitting elements in display pixels, have also been developed. However, when LEDs are miniaturized to the micro or nano level, surface defects can reduce the LED's luminous efficiency. Summary of the Invention [Problem to be solved by the invention]

[0004] SUMMARY OF THE INVENTION An object of the present invention is to provide a nanorod light emitting device having a centralized current path structure and a method for manufacturing the same. [Means for solving the problem]

[0005] According to one embodiment, a nanorod light emitting device is provided, including: a first semiconductor layer doped with a first conductivity type; a light emitting layer disposed on the first semiconductor layer; a second semiconductor layer disposed on the light emitting layer and doped with a second conductivity type electrically opposite to the first conductivity type; a conductive layer disposed between a center of a lower surface of the light emitting layer and the first semiconductor layer, or between a center of an upper surface of the light emitting layer and the second semiconductor layer; and a current blocking layer disposed to surround a sidewall of the conductive layer.

[0006] The first semiconductor layer is also a single layer made of a single composition of semiconductor material. The second semiconductor layer is also a single layer made of a semiconductor material of the same single composition as the material of the first semiconductor layer.

[0007] The current blocking layer may include an oxide material. The conductive layer may include a first conductive layer disposed between a center of a lower surface of the light emitting layer and the first semiconductor layer, and a second conductive layer disposed between a center of an upper surface of the light emitting layer and the second semiconductor layer.

[0008] The current blocking layer may include a first current blocking layer arranged between a lower surface of the light emitting layer and the first semiconductor layer to surround a sidewall of the first conductive layer, and a second current blocking layer arranged between an upper surface of the light emitting layer and the second semiconductor layer to surround a sidewall of the second conductive layer.

[0009] The conductive layer may further include a third conductive layer disposed at a center inside the light-emitting layer, and the current-blocking layer may further include a third current-blocking layer disposed inside the light-emitting layer so as to surround a sidewall of the third conductive layer.

[0010] The light emitting layer may include a first quantum well structure and a second quantum well structure, the third conductive layer may be disposed in the center between the first quantum well structure and the second quantum well structure, and the third current blocking layer may be disposed at the edge between the first quantum well structure and the second quantum well structure.

[0011] The nanorod light emitting device may further include a contact layer disposed on an upper surface of the second semiconductor layer.

[0012] The diameter of the first semiconductor layer, the diameter of the current blocking layer, the diameter of the light emitting layer, and the diameter of the second semiconductor layer are the same.

[0013] For example, the outer diameter of the current blocking layer may range from 0.05 μm to 2 μm.

[0014] For example, the diameter of the conductive layer is 0.01 μm or more and is smaller than the outer diameter of the current blocking layer.

[0015] For example, the height of the nanorod light emitting device may range from 1 μm to 20 μm.

[0016] The current blocking layer and the conductive layer have the same thickness. For example, the thickness of the current blocking layer may range from 5 nm to 200 nm.

[0017] The conductive layer is Al x Ga 1-x The current blocking layer may include AlOx, and the first and second semiconductor layers may include AlGaInP.

[0018] The nanorod light emitting device may further include a passivation film surrounding side surfaces of the first semiconductor layer, the current blocking layer, the light emitting layer, and the second semiconductor layer.

[0019] For example, the passivation film may be made of AlOx, HfOx, TiOx, SiNx, SiOx, or Al x Ga 1-x It may contain at least one material selected from As(x≧0.9).

[0020] The passivation film is also made of a material that has an epitaxial relationship with the light-emitting layer so that a heterojunction is formed at the interface with the light-emitting layer.

[0021] The current blocking layer, the light emitting layer, and the second semiconductor layer may have the same first diameter, and the first semiconductor layer may have a second diameter larger than the first diameter.

[0022] According to another embodiment, there is provided a display device including a plurality of pixel electrodes, a common electrode corresponding to the plurality of pixel electrodes, and a plurality of nanorod light-emitting elements according to the above-described embodiments connected between each pixel electrode and the common electrode.

[0023] According to yet another embodiment, there is provided a method for manufacturing a nanorod light-emitting device, the method including the steps of: forming a sacrificial layer on a semiconductor substrate; forming a first semiconductor layer doped with a first conductivity type on the sacrificial layer; forming a light-emitting layer on the first semiconductor layer; forming a second semiconductor layer doped with a second conductivity type electrically opposite to the first conductivity type on the light-emitting layer; forming a conductive layer material on the first semiconductor layer between the steps of forming the first semiconductor layer and the light-emitting layer, or forming a conductive layer on the light-emitting layer between the steps of forming the light-emitting layer and the second semiconductor layer; partially etching the first semiconductor layer, the light-emitting layer, the second semiconductor layer, and the conductive layer to form a plurality of nanorod light-emitting devices; and oxidizing sidewalls of the conductive layer through an oxidation process to form a current-blocking layer surrounding the sidewalls of the conductive layer. [Brief explanation of the drawings]

[0024] [Figure 1] 1 is a cross-sectional view showing a schematic configuration of a nanorod light-emitting device according to an embodiment. [Figure 2A] 1A to 1C are cross-sectional views schematically illustrating a method for manufacturing a nanorod light-emitting device according to an embodiment. [Figure 2B]1A to 1C are cross-sectional views schematically illustrating a method for manufacturing a nanorod light-emitting device according to an embodiment. [Figure 2C] 1A to 1C are cross-sectional views schematically illustrating a method for manufacturing a nanorod light-emitting device according to an embodiment. [Figure 2D] 1A to 1C are cross-sectional views schematically illustrating a method for manufacturing a nanorod light-emitting device according to an embodiment. [Figure 2E] 1A to 1C are cross-sectional views schematically illustrating a method for manufacturing a nanorod light-emitting device according to an embodiment. [Figure 3] 2B is a cross-sectional view showing a schematic configuration of one nanorod light-emitting device manufactured by the method shown in FIGS. 2A to 2E. [Figure 4] FIG. 10 is a cross-sectional view showing a schematic configuration of a nanorod light-emitting device according to another embodiment. [Figure 5] FIG. 10 is a cross-sectional view showing a schematic configuration of a nanorod light-emitting device according to yet another embodiment. [Figure 6] FIG. 10 is a cross-sectional view showing a schematic configuration of a nanorod light-emitting device according to yet another embodiment. [Figure 7] 1 is a conceptual diagram illustrating a configuration of a display device using nanorod light-emitting elements according to an embodiment. [Figure 8A] 8 is a diagram illustrating a process of disposing a plurality of nanorod light emitting elements between a pixel electrode and a common electrode for fabricating the display device shown in FIG. 7; [Figure 8B] 8 is a diagram illustrating a process of disposing a plurality of nanorod light emitting elements between a pixel electrode and a common electrode for fabricating the display device shown in FIG. 7; [Figure 8C] 8 is a diagram illustrating a process of disposing a plurality of nanorod light emitting elements between a pixel electrode and a common electrode for fabricating the display device shown in FIG. 7; [Figure 9] FIG. 10 is a cross-sectional view showing a schematic configuration of a nanorod light-emitting device according to yet another embodiment. [Figure 10] 1 is a diagram illustrating an example of a display device to which a nanorod light emitting device is applied, according to an embodiment. [Figure 11] 10 is a diagram illustrating another example of a display device to which a nanorod light emitting device is applied, according to an embodiment. [Figure 12] 10 is a diagram illustrating yet another example of a display device to which a nanorod light emitting device is applied, according to an embodiment. [Figure 13] 10 is a diagram illustrating yet another example of a display device to which a nanorod light emitting device is applied, according to an embodiment. [Figure 14] 10 is a diagram illustrating yet another example of a display device to which a nanorod light emitting device is applied, according to an embodiment. [Figure 15] 10 is a diagram illustrating yet another example of a display device to which a nanorod light emitting device is applied, according to an embodiment. [Figure 16] 10 is a diagram illustrating yet another example of a display device to which a nanorod light emitting device is applied, according to an embodiment. DETAILED DESCRIPTION OF THE INVENTION

[0025] Hereinafter, a nanorod light emitting device having a centralized current path structure and a method for manufacturing the same will be described in detail with reference to the accompanying drawings. In the following drawings, the same reference numerals refer to the same components, and the size of each component may be exaggerated in the drawings for clarity and convenience. Furthermore, the embodiments described below are merely exemplary, and various modifications are possible.

[0026] Hereinafter, the terms "upper" and "above" include not only those that are directly on top in contact with each other, but also those that are on top without contacting each other. Singular expressions include plural expressions unless otherwise clearly indicated in the context. Furthermore, when a part "includes" a certain element, this does not mean excluding other elements, but means that it further includes other elements, unless otherwise specified.

[0027] Use of the term "said" and similar directives refers to both the singular and the plural. Unless a method step is expressly stated or stated to the contrary, the steps may be performed in any suitable order and are not necessarily limited to the order stated.

[0028] In addition, terms such as "unit" and "module" used in the specification refer to a unit that processes at least one function or operation, and may be implemented by hardware or software, or by a combination of hardware and software.

[0029] The line connections or connecting members between components shown in the drawings are illustrative of functional connections and / or physical or circuit connections, and in an actual device, various functional connections, physical connections, or circuit connections may be present, which may be alternative or additional.

[0030] The use of any examples or exemplary terms is merely for the purpose of illustrating the technical concept in detail, and the scope is not limited by the examples or exemplary terms unless otherwise limited by the claims.

[0031] 1 is a cross-sectional view illustrating a schematic configuration of a nanorod light emitting device according to an embodiment. Referring to FIG. 1, a nanorod light emitting device 100 according to an embodiment includes a first semiconductor layer 103, a light emitting layer 105 disposed on the first semiconductor layer 103, a second semiconductor layer 107 disposed on the light emitting layer 105, a first current path layer 104 disposed between the first semiconductor layer 103 and the light emitting layer 105, and a second current path layer 106 disposed between the light emitting layer 105 and the second semiconductor layer 107.

[0032] The first semiconductor layer 103 is disposed on the substrate 101, and a buffer layer or a sacrificial layer 102 may be further disposed between the substrate 101 and the first semiconductor layer 103. For example, the sacrificial layer 102 may be disposed on the substrate 101, and the first semiconductor layer 103 may be disposed on the sacrificial layer 102. The substrate 101 may also be made of a II-VI or III-V compound semiconductor material. For example, the substrate 101 may be made of GaAs. The nanorod light emitting device 100 can be used in a state including the substrate 101 and the sacrificial layer 102, or can be used in a state in which the substrate 101 and the sacrificial layer 102 are removed after the nanorod light emitting device 100 is manufactured.

[0033] The first semiconductor layer 103 and the second semiconductor layer 107 may be made of a II-VI or III-V compound semiconductor material. The first semiconductor layer 103 and the second semiconductor layer 107 provide electrons and holes to the light emitting layer 105. To this end, the first semiconductor layer 103 is doped n-type or p-type, and the second semiconductor layer 107 is doped to the electrically opposite conductivity type to that of the first semiconductor layer 103. For example, the first semiconductor layer 103 may be doped n-type and the second semiconductor layer 107 may be doped p-type, or the first semiconductor layer 103 may be doped p-type and the second semiconductor layer 107 may be doped n-type. When the first semiconductor layer 103 or the second semiconductor layer 107 is doped n-type, silicon (Si) may be used as a dopant, and when the first semiconductor layer 103 or the second semiconductor layer 107 is doped p-type, for example, zinc (Zn) may be used as a dopant. The first semiconductor layer 103 or the second semiconductor layer 107, which are doped n-type, can provide electrons to the light emitting layer 105, and the second semiconductor layer 107 or the first semiconductor layer 103, which are doped p-type, can provide holes to the light emitting layer 105.

[0034] The substrate 101 and the sacrificial layer 102 can be doped to the same conductivity type as the first semiconductor layer 103 thereon. For example, if the first semiconductor layer 103 is doped n-type, the substrate 101 and the sacrificial layer 102 are made of n-GaAs. The substrate 101 is doped at a lower concentration than the sacrificial layer 102, and the sacrificial layer 102 is doped at a higher concentration than the substrate 101. Although not shown in FIG. 1 , a contact layer for ohmic contact may be further disposed between the first semiconductor layer 103 and the sacrificial layer 102. The contact layer disposed between the first semiconductor layer 103 and the sacrificial layer 102 is also doped to the same conductivity type as the first semiconductor layer 103, but at a higher doping concentration than the first semiconductor layer 103 and the sacrificial layer 102.

[0035] The light-emitting layer 105 has a structure in which quantum wells are arranged between barriers. Electrons and holes provided from the first semiconductor layer 103 and the second semiconductor layer 107 recombine in the quantum wells in the light-emitting layer 105, generating light. The wavelength of light generated in the light-emitting layer 105 is also determined by the band gap of the material constituting the quantum wells in the light-emitting layer 105. The light-emitting layer 105 may have only one quantum well, or may have a multi-quantum well (MQW) structure in which multiple quantum wells and multiple barriers are alternately arranged. The thickness of the light-emitting layer 105 or the number of quantum wells in the light-emitting layer 105 can be appropriately selected taking into account the driving voltage and light-emitting efficiency of the nanorod light-emitting device 100. For example, the thickness of the light-emitting layer 105 is selected to be equal to or less than twice the outer diameter D1 of the nanorod light-emitting device 100.

[0036] The nanorod light emitting device 100 may further include a contact layer 108 disposed on the second semiconductor layer 107 and providing an ohmic contact. The contact layer 108 is doped to the same conductivity type as the second semiconductor layer 107. For example, if the second semiconductor layer 107 is doped to p-type, the contact layer 108 is also doped to p-type. The contact layer 108 may be made of, for example, GaInP or GaAs.

[0037] The nanorod light emitting device 100 according to this embodiment may have a nanorod shape with a very small size, such as a nanometer or a micrometer. For example, the nanorod light emitting device 100 has an outer diameter D1 in the range of approximately 0.05 μm to 2 μm. The nanorod light emitting device 100 having a nanorod shape may have a substantially uniform outer diameter along its length. For example, the first semiconductor layer 103, the light emitting layer 105, the second semiconductor layer 107, and the contact layer 108 have substantially the same outer diameter. Furthermore, when the length between the lower surface of the first semiconductor layer 103 and the upper surface of the second semiconductor layer 107 or the length between the lower surface of the first semiconductor layer 103 and the upper surface of the contact layer 108 is defined as the height H of the nanorod light emitting device 100, the height H of the nanorod light emitting device 100 may be in the range of approximately 1 μm to 20 μm. The nanorod light emitting device 100 may also have a large aspect ratio, for example, 5 or more. Generally, the outer diameter D1 of the nanorod light emitting device 100 can be selected to be about 600 nm, and the height H can be selected to be about 5 μm. In this case, the aspect ratio of the nanorod light emitting device 100 is slightly larger than 8.

[0038] However, when a nanorod light emitting device 100 is fabricated with such a small size and a large aspect ratio, the surface area to volume ratio increases, resulting in an increase in surface defects in the light emitting layer 105. In other words, surface defects due to dangling bonds occur on the outer surface of the light emitting layer 105, and as the surface area to volume ratio increases, the number of unsaturated bonds also increases, resulting in an increase in surface defects. The surface defects obstruct the flow of current and cause a decrease in the light emitting efficiency of the light emitting layer 105.

[0039] The first current path layer 104 and the second current path layer 106, respectively disposed on the lower and upper surfaces of the light emitting layer 105, concentrate current in the center of the light emitting layer 105, which has almost no surface defects, thereby improving the light emitting efficiency of the light emitting layer 105. To this end, the first current path layer 104 includes a first current blocking layer 104a disposed between the edge of the lower surface of the light emitting layer 105 and the edge of the upper surface of the first semiconductor layer 103, and a first conductive layer 104b disposed between the center of the lower surface of the light emitting layer 105 and the center of the upper surface of the first semiconductor layer 103. Therefore, the first current blocking layer 104a is the same layer as the first conductive layer 104b and has a ring shape surrounding the sidewall of the first conductive layer 104b. The second current path layer 106 includes a second current blocking layer 106a disposed between the edge of the upper surface of the light emitting layer 105 and the edge of the lower surface of the second semiconductor layer 107, and a second conductive layer 106b disposed between the center of the upper surface of the light emitting layer 105 and the center of the lower surface of the second semiconductor layer 107. The second current blocking layer 106a is the same layer as the second conductive layer 106b and has a ring shape surrounding the sidewall of the second conductive layer 106b. The thickness t of the first current blocking layer 104a is the same as the thickness of the first conductive layer 104b, and the thickness of the second current blocking layer 106a is also the same as the thickness of the second conductive layer 106b. For example, the thickness t of the first current blocking layer 104a and the second current blocking layer 106a may range from about 5 nm to 200 nm.

[0040] The outer diameters of the first current blocking layer 104a and the second current blocking layer 106a may be in the range of about 0.05 μm to about 2 μm, which is the same as the outer diameter D1 of the nanorod light emitting device 100. Therefore, the diameters of the first semiconductor layer 103, the first current blocking layer 104a, the light emitting layer 105, the second current blocking layer 106a, and the second semiconductor layer 107 are also the same. The diameter D2 of the first conductive layer 104b and the second conductive layer 106b is about 0.01 μm or more and smaller than the outer diameters of the first current blocking layer 104a and the second current blocking layer 106a.

[0041] In this structure, the first current blocking layer 104a and the second current blocking layer 106a prevent current from flowing near the surface of the light emitting layer 105 where surface defects exist, and current is supplied only to the center of the light emitting layer 105, where there are almost no surface defects, via the first conductive layer 104b and the second conductive layer 106b. Therefore, the nanorod light emitting device 100 can achieve high luminous efficiency despite its small size and large aspect ratio.

[0042] 1 shows that the first current path layer 104 and the second current path layer 106 are disposed on both the lower and upper surfaces of the light emitting layer 105, but this is not necessarily limited thereto. For example, the nanorod light emitting device 100 may include only one of the first current path layer 104 disposed on the lower surface of the light emitting layer 105 and the second current path layer 106 disposed on the upper surface of the light emitting layer 105.

[0043] 2A to 2E are cross-sectional views schematically illustrating a method for manufacturing the nanorod light emitting device 100 according to an embodiment. Hereinafter, the method for manufacturing the nanorod light emitting device 100 according to an embodiment will be described with reference to FIGS.

[0044] 2A, a sacrificial layer 102, a first semiconductor layer 103, a first conductive layer 104b, a light emitting layer 105, a second conductive layer 106b, and a second semiconductor layer 107 are sequentially grown on a substrate 101. The sacrificial layer 102 is disposed over a large area of ​​the upper surface of the substrate 101, the first semiconductor layer 103 is grown over the entire upper surface of the sacrificial layer 102, and the first conductive layer 104b is grown over the entire upper surface of the first semiconductor layer 103. Furthermore, the light emitting layer 105, the second conductive layer 106b, and the second semiconductor layer 107 are each grown to be disposed over the entire upper surface of the underlying layer. Although not shown in FIGS. 2A through 2E, a contact layer 108 may be further formed on the upper surface of the second semiconductor layer 107.

[0045] The substrate 101 and the sacrificial layer 102 may be made of, for example, n-GaAs. When the nanorod light emitting device 100 is a light emitting device that emits red light, the first semiconductor layer 103 may be made of, for example, n-AlGaInP, and the second semiconductor layer 107 may be made of, for example, p-AlGaInP. Therefore, the first semiconductor layer 103 is a single layer made of a semiconductor material with a single composition, and the second semiconductor layer 107 is also a single layer made of the same semiconductor material as the first semiconductor layer 103, and the first semiconductor layer 103 and the second semiconductor layer 107 are doped with opposite dopants. For example, the first semiconductor layer 103 is doped with Si, and the second semiconductor layer 107 is doped with Zn. Furthermore, when a contact layer 108 is further formed, the contact layer 108 may be made of, for example, p-GaInP or p-GaAs, or may include both p-GaInP and p-GaAs.

[0046] When the light emitting layer 105 emits red light, it is made of, for example, AlGaInP. The AlGaInP of the light emitting layer 105 is undoped. The light emitting layer 105 includes barriers and quantum wells, and therefore the Al content of the AlGaInP may vary. For example, the Al content of the barriers is higher than that of the quantum wells. Furthermore, compared to the first and second semiconductor layers 103 and 107, the Al content of the first and second semiconductor layers 103 and 107 is highest, the Al content of the barriers in the light emitting layer 105 is next highest, and the Al content of the quantum wells in the light emitting layer 105 is lowest. Therefore, in the conduction band, the energy level of the first and second semiconductor layers 103 and 107 is highest, the energy level of the barriers in the light emitting layer 105 is next highest, and the energy level of the quantum wells in the light emitting layer 105 is lowest.

[0047] After forming the second semiconductor layer 107, a hard mask 120 is formed on the second semiconductor layer 107 at regular intervals. Alternatively, if a contact layer 108 is formed on the second semiconductor layer 107, the hard mask 120 may have a plurality of openings arranged at regular intervals on the contact layer 108. For example, the material for the hard mask 120 may be formed entirely on the upper surface of the second semiconductor layer 107 or the contact layer 108, and then the material for the hard mask 120 may be patterned using lithography to have a plurality of openings arranged at regular intervals, thereby forming the hard mask 120. The hard mask 120 may be formed, for example, using a single SiO2 layer or a double SiO2 / Al layer. Although not explicitly shown in the cross-sectional view of FIG. 2A , the hard mask 120 may have a plurality of openings arranged two-dimensionally when viewed from above.

[0048] 2B, regions not covered by the hard mask 120 are etched and removed using a dry etching method. For example, the second semiconductor layer 107, the second conductive layer 106b, the light emitting layer 105, the first conductive layer 104b, and the first semiconductor layer 103 under the openings in the hard mask 120 are sequentially etched and removed until the sacrificial layer 102 is exposed. As a result, as shown in FIG. 2B, a plurality of nanorods each including the first semiconductor layer 103, the first conductive layer 104b, the light emitting layer 105, the second conductive layer 106b, and the second semiconductor layer 107 can be formed on the substrate 101 and the sacrificial layer 102.

[0049] 2C, the sidewalls of the first conductive layer 104b and the second conductive layer 106b are oxidized to form a first current blocking layer 104a surrounding the sidewall of the first conductive layer 104b and a second current blocking layer 106a surrounding the sidewall of the second conductive layer 106b. To this end, the first conductive layer 104b and the second conductive layer 106b are made of a semiconductor material that has a similar crystal structure to the first and second semiconductor layers 103 and 107 and the light emitting layer 105 and is easily oxidized. For example, the first conductive layer 104b and the second conductive layer 106b are made of Al x Ga 1-xThe first conductive layer 104b and the second conductive layer 106b are made of a material containing As and are not doped. x Ga 1-x When As is used, the light output of the nanorod light emitting device 100 increases as the content of aluminum (Al) increases. x Ga 1-x As is easily oxidized. Also, the thinner the thickness of the first conductive layer 104b and the second conductive layer 106b, the slower the oxidation rate. Therefore, the thickness of the first conductive layer 104b and the second conductive layer 106b and the Al x Ga 1-x The x value of As can be adjusted appropriately. For example, the thickness of the first conductive layer 104b and the second conductive layer 106b ranges from about 5 nm to 200 nm, and x can be selected to satisfy x≧0.85.

[0050] The oxidation process of the first conductive layer 104b and the second conductive layer 106b is carried out by raising the temperature to about 400°C or higher while flowing ultrapure water (DI water) in an oxygen (O2) atmosphere. As a result, Al is removed from the outermost walls of the first conductive layer 104b and the second conductive layer 106b. x Ga 1-x The first current blocking layer 104a and the second current blocking layer 106a are formed as the Al in the As is oxidized. Therefore, the first current blocking layer 104a and the second current blocking layer 106a may include an oxide material formed by oxidizing the side surfaces of the first conductive layer 104b and the second conductive layer 106b. For example, the first current blocking layer 104a and the second current blocking layer 106a may include AlOx, an oxide of Al. The first current blocking layer 104a and the second current blocking layer 106a may also partially contain components such as Al, Ga, and As that remain unoxidized. Because AlOx has high electrical resistance, the first current blocking layer 104a and the second current blocking layer 106a can prevent current from flowing to the outer wall of the light-emitting layer 105.

[0051] 2C, the hard mask 120 remaining on the second semiconductor layer 107 or the contact layer 108 is removed to complete the nanorod light emitting device 100 shown in FIG. 1. Multiple nanorod light emitting devices 100 can be formed at once through the processes shown in FIGS. 2A to 2C.

[0052] However, a passivation process shown in FIG. 2D may be further performed to further improve the performance of the nanorod light emitting device 100. Referring to FIG. 2D, a passivation film 110 is formed to a certain thickness along the surfaces of the plurality of nanorod light emitting devices 100 and the sacrificial layer 102. As a result, the sidewalls of the first semiconductor layer 103, the first current blocking layer 104a, the light emitting layer 105, the second current blocking layer 106a, and the second semiconductor layer 107 of each nanorod light emitting device 100 are surrounded by the passivation film 110. The passivation film 110 may be formed using, for example, metal-organic chemical vapor deposition (MOCVD) or atomic layer deposition (ALD).

[0053] The passivation film 110 is made of a material that has high electrical resistance and a wide band gap, such as AlOx, HfOx, TiOx, SiNx, or SiOx. The passivation film 110 is also made of a material that can be autoxidized. For example, the passivation film 110 is made of Al x Ga 1-x It can also contain As (x≧0.9). x Ga 1-x The higher the x content in As, the greater the Al x Ga 1-x As is easily oxidized. Therefore, by selecting x to be larger than 0.9, Al can be easily oxidized without any special treatment process. x Ga 1-x The passivation film 110 can be formed by natural oxidation of As. x Ga 1-xAfter oxidation of As, the passivation film 110 mainly contains AlOx components.

[0054] In particular, when the passivation film 110 is formed by crystal growth of a material having a similar crystal structure to that of the light emitting layer 105, the passivation film 110 can have an epitaxial relationship with the light emitting layer 105. In other words, a heterojunction is formed at the interface between the passivation film 110 and the light emitting layer 105. This removes unsaturated bonds on the outer surface of the light emitting layer 105, thereby reducing surface defects on the outer surface of the light emitting layer 105. This repairs the surface defects of the light emitting layer 105, further improving the luminous efficiency of the nanorod light emitting device 100. For example, AlOx, HfOx, TiOx, Al x Ga 1-x The passivation film 110 formed by growing As (x≧0.9) or the like by MOCVD or ALD may have an epitaxial relationship with the light emitting layer 105 .

[0055] 2E, the passivation film 110 material remaining on the sacrificial layer 102 and the hard mask 120 remaining on the second semiconductor layer 107 or the contact layer 108 are removed. This allows multiple nanorod light emitting devices 100 to be formed on the substrate 101 and the sacrificial layer 102 at once. The sacrificial layer 102 is then removed to individually separate the multiple nanorod light emitting devices 100. Alternatively, the substrate 101 and the sacrificial layer 102 may be cut vertically, and each nanorod light emitting device 100 may be used with the substrate 101 and the sacrificial layer 102 still attached to it. Alternatively, the substrate 101 and the sacrificial layer 102 may be cut vertically so that two or more nanorod light emitting devices 100 remain, and two or more nanorod light emitting devices 100 may be used together.

[0056] 3 is a cross-sectional view showing a schematic configuration of a nanorod light emitting device 100 fabricated by the method shown in FIGS. 2A through 2E. Referring to FIG. 3, the nanorod light emitting device 100 includes a first semiconductor layer 103, a first current path layer 104 disposed on the first semiconductor layer 103, a light emitting layer 105 disposed on the first current path layer 104, a second current path layer 106 disposed on the light emitting layer 105, a second semiconductor layer 107 disposed on the second current path layer 106, and a passivation film 110 surrounding the sides of these layers. The first current path layer 104 includes a first current blocking layer 104a and a first conductive layer 104b, and the second current path layer 106 includes a second current blocking layer 106a and a first conductive layer 106b. If necessary, contact layers for ohmic contact may be further disposed on the lower surface of the first semiconductor layer 103 and the upper surface of the second semiconductor layer 107. As described above, the first semiconductor layer 103, the first current path layer 104, the light emitting layer 105, the second current path layer 106 and the second semiconductor layer 107 have the same diameter and are all configured in the form of nanorods.

[0057] 3 illustrates the passivation film 110 surrounding all of the sidewalls of the first semiconductor layer 103, the first current path layer 104, the light emitting layer 105, the second current path layer 106, and the second semiconductor layer 107, but this is not necessarily limited thereto. For example, FIG. 4 is a cross-sectional view showing a schematic configuration of a nanorod light emitting device 100a according to another embodiment. Referring to FIG. 4, the passivation film 110 may be formed to surround only the light emitting layer 105 or to surround only a portion of the sidewall of the nanorod light emitting device 100a including at least the light emitting layer 105.

[0058] Although the nanorod light emitting devices 100 and 100a have been described as including the first current path layer 104 and the second current path layer 106 disposed on the lower and upper surfaces of the light emitting layer 105, respectively, the positions and number of the current path layers are not necessarily limited thereto. For example, Figures 5 and 6 are cross-sectional views showing the schematic configurations of nanorod light emitting devices according to further embodiments.

[0059] 5, the nanorod light emitting device 100b may further include a third current path layer 111 disposed within the light emitting layer 105. The light emitting layer 105 includes a first quantum well structure 105a disposed between the first current path layer 104 and the third current path layer 111, and a second quantum well structure 105b disposed between the third current path layer 111 and the second current path layer 106. The second quantum well structure 105b is disposed on the first quantum well structure 105a along the thickness direction of the nanorod light emitting device 100b.

[0060] The third current path layer 111 includes a third current blocking layer 111a disposed at the edge between the first quantum well structure 105a and the second quantum well structure 105b, and a third conductive layer 111b disposed at the center between the first quantum well structure 105a and the second quantum well structure 105b. The third current blocking layer 111a has a ring shape and is disposed inside the light emitting layer 105 so as to surround the sidewall of the third conductive layer 111b. The first conductive layer 104b, the second conductive layer 106b, and the third conductive layer 111b have the same diameter. This allows current to be uniformly concentrated in the center of the light emitting layer 105 throughout the entire region of the light emitting layer 105.

[0061] 6, the nanorod light emitting device 100c may further include a third current path layer 111 and a fourth current path layer 112 disposed within the light emitting layer 105. The light emitting layer 105 includes a first quantum well structure 105a disposed between the first current path layer 104 and the third current path layer 111, a second quantum well structure 105b disposed between the third current path layer 111 and the fourth current path layer 112, and a third quantum well structure 105c disposed between the fourth current path layer 112 and the second current path layer 106. The first quantum well structure 105a, the second quantum well structure 105b, and the third quantum well structure 105c are sequentially stacked along the thickness direction of the nanorod light emitting device 100c.

[0062] The third current path layer 111 includes a third current blocking layer 111a disposed at an edge between the first quantum well structure 105a and the second quantum well structure 105b, and a third conductive layer 111b disposed in the center between the first quantum well structure 105a and the second quantum well structure 105b. The fourth current path layer 112 includes a fourth current blocking layer 112a disposed at an edge between the second quantum well structure 105b and the third quantum well structure 105c, and a fourth conductive layer 112b disposed in the center between the second quantum well structure 105b and the third quantum well structure 105c. The third current blocking layer 111a is disposed to surround the sidewall of the third conductive layer 111b, and the fourth current blocking layer 112a has a ring shape and is disposed to surround the sidewall of the fourth conductive layer 112b. The first conductive layer 104b, the second conductive layer 106b, the third conductive layer 111b, and the fourth conductive layer 112b have the same diameter.

[0063] As the number of quantum wells within light emitting layer 105 increases, additional current path layers may be added in this manner. For example, as the number of quantum wells within light emitting layer 105 increases, multiple multiple quantum well (MQW) structures and multiple current path layers may be alternately arranged within light emitting layer 105. In this case, one multiple quantum well structure arranged between two current path layers may include, for example, one to about ten quantum wells.

[0064] The nanorod light emitting device 100 can be used in a variety of applications. In particular, the nanorod light emitting device 100 can be used as a light emitting element for a pixel of a next-generation display device. For example, FIG. 7 is a conceptual diagram showing a schematic configuration of a display device using the nanorod light emitting device 100 according to one embodiment. Referring to FIG. 7, the display device 200 includes a plurality of first pixel electrodes 202B, a first common electrode 203B corresponding to the plurality of first pixel electrodes 202B, a plurality of second pixel electrodes 202G, a second common electrode 203G corresponding to the plurality of second pixel electrodes 202G, a plurality of third pixel electrodes 202R, a third common electrode 203R corresponding to the plurality of third pixel electrodes 202R, a plurality of first nanorod light emitting elements 100B connected between each of the first pixel electrodes 202B and the first common electrode 203B, a plurality of second nanorod light emitting elements 100G connected between each of the second pixel electrodes 202G and the second common electrode 203G, and a plurality of third nanorod light emitting elements 100R connected between each of the third pixel electrodes 202R and the third common electrode 203R.

[0065] For example, the first nanorod light emitting element 100B is configured to emit blue light, the second nanorod light emitting element 100G is configured to emit green light, and the third nanorod light emitting element 100R is configured to emit red light. Furthermore, one first pixel electrode 202B and one first common electrode 203B form one blue subpixel, one second pixel electrode 202G and one second common electrode 203G form one green subpixel, and one third pixel electrode 202R and one third common electrode 203R form one red subpixel.

[0066] 8A to 8C illustrate an exemplary process of disposing a plurality of first nanorod light-emitting elements 100B between a first pixel electrode 202B and a first common electrode 203B for fabricating the display device 200 shown in FIG. 7.

[0067] 8A, a first pixel electrode 202B, a first common electrode 203B, a second pixel electrode 202G, a second common electrode 203G, a third pixel electrode 202R, and a third common electrode 203R are formed on a substrate 201. Although not shown in FIG. 8A, a driving circuit connected to the first pixel electrode 202B, the first common electrode 203B, the second pixel electrode 202G, the second common electrode 203G, the third pixel electrode 202R, and the third common electrode 203R and controlling the lighting operations of the first to third nanorod light emitting elements 100B, 100G, and 100R may be disposed on or within the substrate 201. Then, a solution 10 containing a plurality of first nanorod light emitting elements 100B is sprayed between the first pixel electrode 202B and the first common electrode 203B. The solution 10 may be sprayed by, but is not limited to, an inkjet printing method.

[0068] 8B, an electric field is applied between the first pixel electrode 202B and the first common electrode 203B. The electric field causes the plurality of first nanorod light emitting elements 100B to self-align between the first pixel electrode 202B and the first common electrode 203B. The order of spraying the solution 10 and applying the electric field can be reversed. For example, the solution 10 containing the plurality of first nanorod light emitting elements 100B can be sprayed into the region between the first pixel electrode 202B and the first common electrode 203B while applying an electric field between the first pixel electrode 202B and the first common electrode 203B.

[0069] When multiple first nanorod light emitting devices 100B are self-aligned, as shown in FIG. 8C, a first contact electrode 205 for electrically and / or physically stably connecting the first nanorod light emitting devices 100B can be formed on the first pixel electrode 202B, and a second contact electrode 206 for electrically and / or physically stably connecting the first nanorod light emitting devices 100B can also be formed on the first common electrode 203B.

[0070] The processes shown in Figures 8A to 8C are similarly applicable to the process of disposing the second nanorod light emitting element 100G between the second pixel electrode 202G and the second common electrode 203G, and the process of disposing the third nanorod light emitting element 100R between the third pixel electrode 202R and the third common electrode 203R.

[0071] 9 is a cross-sectional view showing a schematic configuration of a nanorod light emitting device according to another embodiment. Referring to FIG. 9, a nanorod light emitting device 100d according to another embodiment includes a substrate 101, a sacrificial layer 102, a first semiconductor layer 103′, a first current path layer 104, a light emitting layer 105, a second current path layer 106, a second semiconductor layer 107, a contact layer 108, and a passivation film 110. The first current path layer 104 includes a first current blocking layer 104a and a first conductive layer 104b, and the second current path layer 106 includes a second current blocking layer 106a and a second conductive layer 106b.

[0072] In the nanorod light emitting device 100d shown in FIG. 9, the width or diameter of the substrate 101, the sacrificial layer 102, and the first semiconductor layer 103′ is larger than that of the other layers. In other words, the width or diameter of the first current path layer 104, the light emitting layer 105, the second current path layer 106, the second semiconductor layer 107, and the contact layer 108 is smaller than that of the substrate 101, the sacrificial layer 102, and the first semiconductor layer 103′. For example, the contact layer 108, the second semiconductor layer 107, the second current path layer 106, the light emitting layer 105, and the first current path layer 104 are partially etched and removed to expose a portion of the top surface of the first semiconductor layer 103′. A first electrode 122 may be further disposed on the exposed top surface of the first semiconductor layer 103′, and a second electrode 121 may be further disposed on the top surface of the contact layer 108.

[0073] 9, the first sidewalls of the substrate 101, the sacrificial layer 102, the first semiconductor layer 103′, the first current path layer 104, the light emitting layer 105, the second current path layer 106, the second semiconductor layer 107, and the contact layer 108 are located on the same plane in the vertical direction. The second sidewalls of the substrate 101, the sacrificial layer 102, and the first semiconductor layer 103′, which are located on the opposite side of the first sidewalls, protrude further in the horizontal direction than the second sidewalls of the first current path layer 104, the light emitting layer 105, the second current path layer 106, the second semiconductor layer 107, and the contact layer 108.

[0074] In this case, the passivation film 110 is disposed so as to surround first sidewalls of the first semiconductor layer 103′, the first current path layer 104, the light emitting layer 105, the second current path layer 106, the second semiconductor layer 107, and the contact layer 108, and so as to surround second sidewalls of the first current path layer 104, the light emitting layer 105, the second current path layer 106, the second semiconductor layer 107, and the contact layer 108. Alternatively, the passivation film 110 may be disposed so as to surround only a partial region including at least the light emitting layer 105, as shown in FIG.

[0075] The nanorod light emitting devices 100, 100a, 100c, and 100d shown in Figures 1, 3, 4, 5, and 6 are disposed horizontally on a substrate and connected to two electrodes disposed on the same plane of the substrate, as shown in Figure 7. On the other hand, the nanorod light emitting device 100d shown in Figure 9 is disposed vertically on the substrate. Therefore, the width or diameter of the substrate 101, sacrificial layer 102, and first semiconductor layer 103' of the nanorod light emitting device 100d shown in Figure 9 is, for example, about 30 μm or more.

[0076] The nanorod light emitting device according to the above-described embodiments can be applied to display devices of various sizes and for various purposes without limitation. For example, FIGS. 10 to 16 show various examples of display devices to which the nanorod light emitting device according to an embodiment is applied. As shown in FIG. 10, the nanorod light emitting device can be applied to a display panel of a mobile phone or smartphone 300, and as shown in FIG. 11, the nanorod light emitting device can be applied to a display panel of a tablet or smart tablet 400. Furthermore, the nanorod light emitting device according to an embodiment can be applied to a display panel of a notebook computer 500 as shown in FIG. 12, and to a display panel of a television or smart television 600 as shown in FIG. 13. Furthermore, as shown in FIGS. 14 and 15, the nanorod light emitting device can be applied to a small display panel used in a head-mounted display (HMD) 700, a glasses-type display, a goggle-type display 800, etc. Furthermore, the nanorod light emitting device can also be applied to large display panels used in signage 900 as shown in FIG. 16, large electronic boards, theater screens, and the like.

[0077] The nanorod light emitting device having a centralized current path structure and a method for manufacturing the same have been described with reference to the embodiments shown in the drawings, but these are merely examples, and those skilled in the art will recognize that various modifications and equivalent embodiments are possible. Therefore, the disclosed embodiments should be considered in an illustrative rather than a restrictive sense. The scope of the invention is defined in the claims, not the foregoing description, and all differences within the scope of the invention should be construed as being within the scope of the invention. [Industrial Applicability]

[0078] The present invention is applicable to, for example, display-related technical fields. [Explanation of symbols]

[0079] 100 Nanorod light-emitting device 101 Substrate 102 Sacrificial Layer 103 First semiconductor layer 104 1st current path layer 104a First current blocking layer 104b First conductive layer 105 Light-emitting layer 105a First quantum well structure 105b Second quantum well structure 105c Third quantum well structure 106 2nd current path layer 106a Second current blocking layer 106b Second conductive layer 107 Second semiconductor layer 108 Contact layer 110 Passivation film 111 Third current path layer 111a Third current blocking layer 111b Third conductive layer 112 4th current path layer 112a Fourth current blocking layer 112b 4th conductive layer 120 Hard Mask 121 2nd electrode 122 1st electrode 200 Display device 202B First pixel electrode 202G Second pixel electrode 202R Third pixel electrode 203B 1st common electrode 203G 2nd common electrode 203R 3rd common electrode 205 first contact electrode 206 Second contact electrode

Claims

1. A nanorod light emitting device, a first semiconductor layer doped to a first conductivity type; a light emitting layer disposed on the first semiconductor layer; a second semiconductor layer disposed on the light emitting layer and doped to a second conductivity type electrically opposite to the first conductivity type; a conductive layer disposed at least one of a position between a center of a lower surface of the light emitting layer and the first semiconductor layer and a position between a center of an upper surface of the light emitting layer and the second semiconductor layer; a current blocking layer disposed to surround a sidewall of the conductive layer; an aspect ratio, which is a ratio of a length H of the lower surface of the first semiconductor layer and the upper surface of the second semiconductor layer to an outer diameter of the nanorod light emitting device, is 5 or more; the number of surface defects in the central portion of the upper and lower surfaces of the light-emitting layer is less than the number of surface defects in the edges between which the central portion is sandwiched, and the current-blocking layer is disposed corresponding to the edges; A nanorod light-emitting device characterized by:

2. The nanorod light-emitting device according to claim 1 , wherein the first semiconductor layer is a single layer made of a semiconductor material of a single composition.

3. The nanorod light-emitting device according to claim 2 , wherein the second semiconductor layer is a single layer made of a semiconductor material having the same single composition as the material of the first semiconductor layer.

4. The nanorod light-emitting device according to claim 1 , wherein the current blocking layer contains an oxide material.

5. 5. The nanorod light-emitting device according to claim 1, wherein the conductive layer includes a first conductive layer disposed between the center of the lower surface of the light-emitting layer and the first semiconductor layer, and a second conductive layer disposed between the center of the upper surface of the light-emitting layer and the second semiconductor layer.

6. 6. The nanorod light emitting device of claim 5, wherein the current blocking layer includes a first current blocking layer disposed between a lower surface of the light emitting layer and the first semiconductor layer to surround a sidewall of the first conductive layer, and a second current blocking layer disposed between an upper surface of the light emitting layer and the second semiconductor layer to surround a sidewall of the second conductive layer.

7. the light emitting layer includes a first quantum well structure and a second quantum well structure; the conductive layer further includes a third conductive layer disposed in a center portion between the first quantum well structure and the second quantum well structure; The nanorod light emitting device of any one of claims 1 to 6, wherein the current blocking layer further comprises a third current blocking layer disposed at an edge between the first quantum well structure and the second quantum well structure, surrounding a sidewall of the third conductive layer.

8. The nanorod light-emitting device according to claim 1 , wherein the diameter of the first semiconductor layer, the diameter of the current blocking layer, the diameter of the light-emitting layer, and the diameter of the second semiconductor layer are the same.

9. The nanorod light emitting device of claim 1 , wherein the current blocking layer has an outer diameter ranging from 0.05 μm to 2 μm.

10. The nanorod light emitting device of claim 9 , wherein the diameter of the conductive layer is 0.01 μm or more and smaller than the outer diameter of the current blocking layer.

11. The nanorod light emitting device of claim 1 , wherein the height of the nanorod light emitting device is in the range of 1 μm to 20 μm.

12. 12. The nanorod light-emitting device according to claim 1, wherein the current blocking layer and the conductive layer have the same thickness.

13. The nanorod light emitting device of claim 12, wherein the current blocking layer has a thickness ranging from 5 nm to 200 nm.

14. The conductive layer is Al ｘ Ga １－ｘ 14. The nanorod light-emitting device according to claim 1, wherein the first and second semiconductor layers contain AlGaInP, and the current blocking layer contains AlOx.

15. The nanorod light emitting device according to claim 1 , further comprising a passivation film surrounding the current blocking layer and a side surface of the second semiconductor layer.

16. The passivation film is made of AlOx, HfOx, TiOx, SiNx, SiOx, and Al ｘ Ga １－ｘ The nanorod light emitting device according to claim 15, wherein the nanorod light emitting device contains at least one material selected from the group consisting of As (x≧0.9).

17. The nanorod light-emitting device of claim 15, wherein the passivation film is made of a material that has an epitaxial relationship with the light-emitting layer so that a heterojunction is formed at the interface with the light-emitting layer.

18. 2. The nanorod light emitting device of claim 1, wherein the current blocking layer, the light emitting layer, and the second semiconductor layer have the same first diameter, and the first semiconductor layer has a second diameter larger than the first diameter.

19. A plurality of pixel electrodes; a common electrode corresponding to the plurality of pixel electrodes; a plurality of nanorod light emitting devices connected between each pixel electrode and the common electrode; Each nanorod light-emitting element is a first semiconductor layer doped to a first conductivity type; a light emitting layer disposed on the first semiconductor layer; a second semiconductor layer disposed on the light emitting layer and doped to a second conductivity type electrically opposite to the first conductivity type; a conductive layer disposed at least one of a position between a center of a lower surface of the light emitting layer and the first semiconductor layer and a position between a center of an upper surface of the light emitting layer and the second semiconductor layer; a current blocking layer disposed to surround a sidewall of the conductive layer; an aspect ratio, which is a ratio of a length H of the lower surface of the first semiconductor layer and the upper surface of the second semiconductor layer to an outer diameter of the nanorod light emitting device, is 5 or more; the number of surface defects in the central portion of the upper and lower surfaces of the light-emitting layer is less than the number of surface defects in the edges between which the central portion is sandwiched, and the current-blocking layer is disposed corresponding to the edges; A display device characterized by:

20. A method for manufacturing a nanorod light-emitting device, comprising: forming a sacrificial layer on a semiconductor substrate; forming a first semiconductor layer doped to a first conductivity type on the sacrificial layer; forming a light emitting layer on the first semiconductor layer; forming a second semiconductor layer on the light emitting layer, the second semiconductor layer being doped with a second conductivity type electrically opposite to the first conductivity type; forming a conductive layer material on the first semiconductor layer between the step of forming the first semiconductor layer and the step of forming the light emitting layer, or forming a conductive layer on the light emitting layer between the step of forming the light emitting layer and the step of forming the second semiconductor layer; partially etching the first semiconductor layer, the light emitting layer, the second semiconductor layer, and the conductive layer to form a plurality of nanorod light emitting devices; oxidizing the sidewalls of the conductive layer through an oxidation process to form a current blocking layer surrounding the sidewalls of the conductive layer; an aspect ratio, which is a ratio of a length H of the lower surface of the first semiconductor layer and the upper surface of the second semiconductor layer to an outer diameter of the nanorod light emitting device, is 5 or more; A method for manufacturing a nanorod light-emitting device, characterized in that the number of surface defects at the center of the upper and lower surfaces of the light-emitting layer is fewer than the surface defects at the edges surrounding the center, and the current-blocking layer is arranged corresponding to the edges.

21. 21. The method for manufacturing a nanorod light-emitting device according to claim 20, wherein the first semiconductor layer is made of a semiconductor material of a single composition, and the second semiconductor layer is made of a semiconductor material of the same single composition as the material of the first semiconductor layer.

22. 22. The method for manufacturing a nanorod light-emitting device according to claim 20, wherein the diameter of the first semiconductor layer, the diameter of the current blocking layer, the diameter of the light-emitting layer, and the diameter of the second semiconductor layer are the same.

23. The method of claim 20, wherein the current blocking layer has an outer diameter ranging from 0.05 μm to 2 μm.

24. The method of claim 23, wherein the diameter of the conductive layer is 0.01 μm or more and smaller than the outer diameter of the current blocking layer.

25. 25. The method of claim 20, wherein the height of the nanorod light emitting device is in the range of 1 [mu]m to 20 [mu]m.

26. The method of claim 20, wherein the current blocking layer has a thickness ranging from 5 nm to 200 nm.

27. The conductive layer is Al ｘ Ga １－ｘ 27. The method for manufacturing a nanorod light-emitting device according to claim 20, wherein the first and second semiconductor layers contain AlGaInP, and the current blocking layer contains AlOx.

28. The method for manufacturing a nanorod light-emitting device according to claim 20 , further comprising forming a passivation film surrounding the current blocking layer and the side surfaces of the light-emitting layer.

29. The passivation film is made of AlOx, HfOx, SiNx, SiOx, and Al ｘ Ga １－ｘ 30. The method for manufacturing a nanorod light-emitting device according to claim 28, wherein the nanorod light-emitting device includes at least one material selected from the group consisting of As (x≧0.9).

30. 30. The method for manufacturing a nanorod light-emitting device according to claim 28, wherein the passivation film is made of a material that has an epitaxial relationship with the light-emitting layer so that a heterojunction is formed at the interface with the light-emitting layer.

31. 31. The method for manufacturing a nanorod light-emitting device according to claim 20, further comprising removing the sacrificial layer to separate the plurality of nanorod light-emitting devices.

32. A nanorod light-emitting device as described in any one of claims 1 to 18, characterized in that a current path layer including the current blocking layer and the conductive layer is in contact with the surface of the light-emitting layer.

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