Light-emitting element

Abstract

To increase brightness, reduce power consumption, and improve chromaticity controllability.SOLUTION: A light-emitting device has a plurality of pixels arranged in matrix. At least one of the plurality of pixels comprises: a reflecting plate; a first insulating film arranged on the reflecting plate; a first electrode arranged on the first insulating film; a second insulating film arranged at least on a peripheral part of the first electrode; an organic layer arranged on the second insulating film; and a second electrode arranged on the organic layer.SELECTED DRAWING: Figure 3

Description

[Technical Field]

[0001] The present disclosure relates to light-emitting devices. [Background technology]

[0002] BACKGROUND ART In recent years, organic electroluminescence elements (hereinafter referred to as organic EL elements) have become known as elements used in display devices. Organic EL elements are self-luminous elements that consume low power and have a high contrast ratio, making it possible to construct thin, low-power, high-resolution display devices without the need for lighting devices. [Prior art documents] [Patent documents]

[0003] [Patent Document 1] Japanese Patent Application Laid-Open No. 2013-044890 Summary of the Invention [Problem to be solved by the invention]

[0004] In the display devices using the above-mentioned conventional organic EL elements, current leakage at the organic EL thin film portion at the edge of the pixel opening constituted by the organic EL element has been observed to cause a decrease in light-emitting current efficiency and abnormal light emission, which may result in a decrease in brightness, an increase in power consumption, and a decrease in chromaticity controllability.

[0005] The present invention has been made in view of the above, and relates to a light-emitting element, a display device, and an electronic device that have high brightness, can reduce power consumption, and can improve chromaticity controllability. [Means for solving the problem]

[0006] According to the present disclosure, there is provided a liquid crystal display device having a plurality of pixels arranged in a matrix, at least one of the plurality of pixels comprising: a reflector, a first insulating film disposed on the reflector, a first electrode disposed on the first insulating film, a second insulating film disposed on at least a peripheral portion of the first electrode, an organic layer disposed on the second insulating film, and a second electrode disposed on the organic layer, wherein the first insulating film has, for each of the pixels in a cross-sectional view, a first portion corresponding to a light-emitting portion of the pixel, and a first convex portion and a second convex portion that protrude from an upper surface of the first portion toward the first electrode in a non-light-emitting portion of the pixel, and the first convex portion and the second convex portion included in the same pixel are The aforementioned In a cross-sectional view, the first electrode is positioned across the light-emitting portion of the pixel, and covers at least a part of the first convex portion and the second convex portion included in the same pixel, the part facing the light-emitting portion, and the second insulating film is a part of the first electrode that is covered by the first electrode. is The first convex portion and the second convex portion face the light-emitting portion side. At least part of the surface and among the plurality of pixels In a pair of adjacent pixels, One of the pixels The first protrusion; The other pixel The second protrusion is formed by the second insulating film. A physically separated light emitting element is provided. do. [Brief explanation of the drawings]

[0007] [Figure 1] 1 is a schematic block diagram of a display device according to an embodiment of the present invention; [Figure 2] FIG. 1 is an equivalent circuit diagram when the drive circuit for an organic EL pixel element is configured as a two-transistor / one-capacitor drive circuit. [Figure 3] FIG. 1 is an explanatory diagram of the basic configuration of an organic EL pixel element according to a first embodiment. [Figure 4] FIG. 1 is a diagram illustrating the principle of an embodiment. [Figure 5] 1A to 1C are explanatory diagrams illustrating a manufacturing process of an anode electrode in an organic EL pixel element. [Figure 6] FIG. 10 is an explanatory diagram of the basic configuration of an organic EL pixel element according to a second embodiment. [Figure 7]FIG. 10 is an explanatory diagram of the basic configuration of an organic EL pixel element according to a third embodiment. [Figure 8] FIG. 10 is an explanatory diagram of the basic configuration of an organic EL pixel element according to a fourth embodiment. [Figure 9] FIG. 10 is an explanatory diagram of the basic configuration of an organic EL pixel element according to a fifth embodiment. [Figure 10] FIG. 10 is an explanatory diagram of the basic configuration of an organic EL pixel element according to a sixth embodiment. [Figure 11] FIG. 13 is an explanatory diagram of the basic configuration of an organic EL pixel element according to a seventh embodiment. [Figure 12] FIG. 13 is an explanatory diagram of the basic configuration of an organic EL pixel element according to an eighth embodiment. [Figure 13] FIG. 2 is a schematic cross-sectional view for explaining a first example of a resonator structure. [Figure 14] FIG. 10 is a schematic cross-sectional view for explaining a second example of a resonator structure. [Figure 15] FIG. 10 is a schematic cross-sectional view for explaining a third example of a resonator structure. [Figure 16] FIG. 10 is a schematic cross-sectional view illustrating a fourth example of a resonator structure. [Figure 17] FIG. 10 is a schematic cross-sectional view illustrating a fifth example of a resonator structure. [Figure 18] FIG. 10 is a schematic cross-sectional view for explaining a sixth example of a resonator structure. [Figure 19] FIG. 10 is a schematic cross-sectional view illustrating a seventh example of a resonator structure. [Figure 20] FIG. 2 is an explanatory diagram illustrating the appearance of a display module. [Figure 21] 1 is an explanatory diagram illustrating the appearance of a display device to which a display device according to an embodiment is applied; [Figure 22] FIG. 1 is an explanatory diagram illustrating the appearance of a digital camera to which the display device according to the embodiment is applied. [Figure 23] 1 is an explanatory diagram illustrating the appearance of a notebook personal computer to which a display device according to an embodiment is applied; [Figure 24] 1 is an explanatory diagram illustrating the appearance of a video camera to which a display device according to an embodiment of the present invention is applied; [Figure 25]1 is an explanatory diagram illustrating the appearance of a head-mounted display to which a display device according to an embodiment is applied; DETAILED DESCRIPTION OF THE INVENTION

[0008] Next, a preferred embodiment will be described with reference to the drawings. FIG. 1 is a block diagram showing a schematic configuration of a display device according to an embodiment. The display device 10 has a plurality of organic EL elements 11R that emit red (R: wavelength 620 nm to 750 nm) light, a plurality of organic EL elements 11G that emit green (G: wavelength 495 nm to 570 nm) light, and a plurality of organic EL elements 11B that emit blue (B: wavelength 450 nm to 495 nm) light, arranged in a matrix in a predetermined order.

[0009] The display device 10 also includes a signal line driving circuit 12 for driving signal lines DTL connected to each of the organic EL pixel elements 11R, 11G, and 11B, a scanning line driving circuit 13 for driving scanning lines SCL connected to each of the organic EL pixel elements 11R, 11G, and 11B, and a current source 14 for supplying current via a current supply line CSL.

[0010] In the above configuration, the area including all of the organic EL pixel elements 11R, 11G, and 11B constitutes a display area 15.

[0011] FIG. 2 is an equivalent circuit diagram when the drive circuit for the organic EL pixel element is configured as a two-transistor / one-capacitor drive circuit.

[0012] This two-transistor / one-capacitor drive circuit (hereinafter referred to as the 2Tr / 1C drive circuit) includes a video signal write transistor TSig whose gate terminal is connected to the corresponding scanning line SCL and driven by the scanning line drive circuit 13, a drive transistor TDrv that is on / off controlled by the video signal write transistor TSig and drives the light-emitting portion ELP of the induced EL element, and a capacitance portion C1.

[0013] In the above configuration, the drive transistor TDrv and the video signal write transistor TSig are specifically configured as MOSFETs.

[0014] In the driving transistor TDrv, the drain terminal D is connected to the current supply line CSL, the source terminal S is connected to the light emitting section ELP and to one end of the capacitance section C1, constituting a second node ND2, and the gate terminal G is connected to the source terminal S of the video signal writing transistor TSig and to the other end of the capacitance section C1, constituting a first node ND1.

[0015] In the video signal writing transistor TSig, the drain terminal D is connected to the signal line DTL, and the gate terminal G is connected to the scanning line SCL.

[0016] [1] First embodiment FIG. 3 is an explanatory diagram of the basic configuration of the organic EL pixel element of the first embodiment. The organic EL pixel elements 11R, 11G, and 11B have the same configuration, so the organic EL pixel element 11R will be described below as an example. The organic EL pixel element 11R comprises a first insulating film layer (semiconductor substrate) 21, an anode electrode portion 23 having a side wall portion 22 formed in a convex shape on the periphery on the first insulating film layer 21, a second insulating film layer 24 formed so as to cover the outer wall portion 22A, upper surface portion 22B, and inner wall portion 22C of the side wall portion 22 of the electrode portion 23, an organic EL layer 25 laminated so as to cover the upper surface of the second insulating film layer 24 and the electrode portion 23, and a cathode electrode portion 26 laminated on the upper surface of the organic EL layer 25 and configured as a transparent electrode. In the above configuration, the anode electrode portion 23 may be made of a material such as an aluminum alloy or a silver alloy. The second insulating film layer 24 may be made of a material such as SiOx, SiON, SiN, AlOx, TaOx, HfOx, or polyimide.

[0017] The operating principle of the embodiment will now be described. First, the problems of the conventional technology will be described. Conventionally, a leak path (a leakage current flow path) is formed in the organic EL thin film, and holes injected from the anode electrode move through the leak path, causing a leakage current to flow.

[0018] As a result, holes injected from the anode electrode do not contribute to the light emission of the organic EL layer, resulting in a decrease in luminous efficiency.In addition, leakage current can cause abnormal light emission in areas of the organic EL layer that are not intended to emit light, which can lead to color anomalies.

[0019] FIG. 4 is a diagram illustrating the principle of the embodiment. For this reason, in the first embodiment, the (second) insulating film layer 24 is formed so as to cover the pixel sidewall, i.e., the inner wall portion 22C of the sidewall portion 22. This blocks hole injection from the sidewall portion 22 of the anode electrode portion 23, thereby blocking the leakage current.

[0020] Furthermore, the electric field generated at the sidewall 22 of the anode electrode 23 changes the direction of movement of holes from the anode electrode 23 toward the cathode electrode 26 via the organic EL layer 25 to the light-emitting surface 25 A of the organic EL layer 25 . As a result, it is possible to suppress the light emission occurring at the pixel sidewalls and to suppress color abnormalities.

[0021] More specifically, when a straight line SL is drawn connecting a point PP on the boundary between the anode electrode portion 23 and the insulating film layer 24 to the cathode electrode portion 26 at the shortest distance (shortest point SP), and the angle formed by this line SL and the upper surface of the anode electrode portion 23 is θ, the thickness tins of the insulating film layer 24 facing the inner wall portion 22C of the side wall portion 22 (insulating film thickness: thickness in the left-right direction in Figure 4(a)) is set so that when an arbitrary potential difference is applied between the anode electrode portion 23 and the cathode electrode portion 26, the angle formed by the electric field vector E formed at the point PP and the upper surface of the anode electrode portion 23 is θ or less. As a result, when the electric field vector E=(Ex, Ey), the following equation is established. arctan(Ey / Ex)≦θ

[0022] As a result, the holes are directed toward the original light-emitting surface 25A of the organic EL layer 25 without going toward the leak path, and it is possible to suppress a decrease in light-emitting efficiency and to suppress abnormal color development.

[0023] Next, a process for forming the anode electrode in the organic EL pixel element will be briefly described. FIG. 5 is an explanatory diagram of the manufacturing process of the anode electrode in the organic EL pixel element. First, the anode electrode part 23 is formed on the first insulating film layer (semiconductor substrate) 21 via a bonding layer CNT by a PVD (Plasma Vapor Deposition) method or the like (see FIG. 5(a)).

[0024] Subsequently, the second insulating film layer 24 is formed by a CVD (Chemical Vapor Deposition) method or the like (see FIG. 5(b)). Furthermore, a resist mask MSK is formed on a part of the second insulating film layer 24 by photolithography (see FIG. 5(c)).

[0025] Next, etching is performed to remove the second insulating film layer 24 in the portion where the resist mask MSK is not formed, and further, a portion of the anode electrode portion 23 is removed by etching to form the side wall portion 22 (see FIG. 5(d)). As a result, a side wall portion 22 is formed in a convex shape on the periphery of the anode electrode portion 23 (see FIG. 5(e)).

[0026] Then, the second insulating film layer 24 is formed again by the CVD method or the like so as to cover the inner wall portion 22C of the side wall portion 22 with the second insulating film layer 24 (see FIG. 5(f)). Subsequently, the entire surface is etched back to remove the second insulating film layer 24 on the upper surface side of the anode electrode portion 23, thereby exposing the upper surface side of the anode electrode portion 23 excluding the sidewall portion 22 (see FIG. 5(g)).

[0027] As a result of the above, an anode electrode portion 23 having a sidewall portion 22 is formed on the first insulating film layer (semiconductor substrate) 21.

[0028] Thereafter, the organic EL layer 25 is formed by vacuum deposition or spin coating, and then the cathode electrode portion 26 as a transparent electrode is formed by spraying, coating, CVD, vacuum deposition, sputtering, or the like, to complete the process.

[0029] As described above, according to the organic EL pixel element of the first embodiment, it is possible to suppress a decrease in light-emitting current efficiency caused by current leakage in the thin film portion of the organic EL layer 25 at the opening end of the organic EL pixel element, thereby achieving high brightness and low power consumption. Furthermore, since abnormal light emission due to current leakage can be suppressed, chromaticity controllability can be improved.

[0030] [2] Second embodiment FIG. 6 is an explanatory diagram of the basic configuration of an organic EL pixel element according to the second embodiment. The organic EL pixel element of the second embodiment differs from the organic EL pixel element of the first embodiment in that, instead of the side wall portion 22 constituting the anode electrode portion 23, a side wall portion 22-1 is formed using an electrode material different from the electrode material of the anode electrode portion 23 to constitute the anode electrode portion 23.

[0031] In this case, the processing selection ratio between the electrode material (electrode material M1) forming the main body of the anode electrode portion 23 and the electrode material (electrode material M2) of the side wall portion 22-1 is increased so that only the electrode material M1 is processed, thereby improving the shape processing stability of the side wall portion 22-1.

[0032] Here, examples of the electrode material M1 that constitutes the anode electrode section 23 include aluminum alloys and silver alloys. Examples of the electrode material M2 forming the side wall portion 22-1 of the anode electrode portion 23 include indium tin oxide, indium oxide, indium gallium zinc oxide, titanium oxide, titanium nitride, titanium, tantalum nitride, and tantalum.

[0033] According to the second embodiment, in addition to the effects of the first embodiment, the stability of shape processing of the side wall portion 22-1 is improved, so that current leakage in the thin film portion of the organic EL layer 25 at the opening end of the organic EL pixel element can be more reliably suppressed, and the same effects as those of the first embodiment can be more reliably obtained.

[0034] [3] Third embodiment FIG. 7 is an explanatory diagram of the basic configuration of an organic EL pixel element according to the third embodiment. The organic EL pixel element of the third embodiment differs from the organic EL pixel element of the first embodiment in that the anode electrode portion 23 is configured by forming the electrode portion 23B (organic EL layer 25 / anode electrode portion 23 junction) and the side wall portion 22 formed on the upper layer of the anode electrode portion 23 using an electrode material different from the electrode material of the main body 23A of the anode electrode portion 23.

[0035] In this case, the electrode material (referred to as electrode material M1) of the main body 23A of the anode electrode portion 23 is made of a material with high reflectivity, and the electrode material (referred to as electrode material M3) of the electrode portion 23B (organic EL layer 25 / anode electrode portion 23 junction) and the side wall portion 22 of the anode electrode portion 23 is made of a material with high carrier injection properties into the organic EL layer 25, thereby ensuring the driving voltage and luminous efficiency of the organic EL pixel element.

[0036] More specifically, examples of the electrode material M1 that constitutes the main body 23A of the anode electrode section 23 include aluminum alloys and silver alloys. Examples of the electrode material M3 constituting the upper layer 23B (organic EL layer 25 / anode electrode 23 junction) and the sidewall 22 of the anode electrode 23 include indium tin oxide, indium oxide, and indium gallium zinc oxide.

[0037] According to the third embodiment, in addition to the effects of the first embodiment, the driving voltage and luminous efficiency of the organic EL pixel element can be ensured.

[0038] [4] Fourth embodiment FIG. 8 is an explanatory diagram of the basic configuration of an organic EL pixel element according to the fourth embodiment. The organic EL pixel element of the fourth embodiment differs from the organic EL pixel element of the third embodiment in that, instead of the side wall portion 22, the anode electrode portion 23 is configured by forming the side wall portion 22-1 using an electrode material different from the electrode material of the electrode portion (first characteristic layer) 23B (organic EL layer 25 / anode electrode portion 23 junction) of the anode electrode portion 23.

[0039] In this case, the electrode material M1 forming the main body 23A of the anode electrode section 23 is made of a material with high reflectivity. Furthermore, the electrode material M2 of the electrode portion 23B of the anode electrode portion 23 (the organic EL layer 25 / anode electrode portion 23 junction) is made to be a material that has a high carrier injectivity into the organic EL layer 25.

[0040] Furthermore, the electrode material of the side wall portion 22-1 (electrode material M3) is made of a material that has a high processing selectivity with respect to the electrode material M2, so that only the electrode material M2 is processed, thereby improving the shape processing stability of the side wall portion 22-1. In this case, examples of the electrode material M1 that constitutes the anode electrode portion 23 include aluminum alloys and silver alloys.

[0041] Examples of the electrode material M2 of the upper layer 23B of the anode electrode section 23 (the organic EL layer 25 / anode electrode section 23 junction) include indium tin oxide, indium oxide, and indium gallium zinc oxide.

[0042] Examples of the electrode material M3 that forms the sidewall portion 22-1 include indium tin oxide, indium oxide, indium gallium zinc oxide, titanium oxide, titanium nitride, titanium, tantalum nitride, and tantalum.

[0043] According to the fourth embodiment, in addition to the effects of the third embodiment, the shape processing stability of the side wall portion 22-1 is improved, so that current leakage in the thin film portion of the organic EL layer 25 at the opening end of the organic EL pixel element can be more reliably suppressed, and the same effects as those of the first embodiment can be more reliably obtained.

[0044] [5] Fifth embodiment FIG. 9 is an explanatory diagram of the basic configuration of an organic EL pixel element according to the fifth embodiment. The organic EL pixel element of the fifth embodiment differs from the organic EL pixel element of the first embodiment in that the lower layer 23C of the anode electrode portion 23 (anode electrode portion 23 / first insulating film layer 21 junction) is formed from an electrode material different from the electrode material of the main body portion 23D of the anode electrode portion 23, thereby constituting the anode electrode portion 23.

[0045] In this case, the electrode material (referred to as electrode material M4) constituting the lower layer 23C (anode electrode portion 23 / first insulating film layer 21 junction) of the anode electrode portion 23 is a material that has high adhesion to the electrode material M1 forming the main body portion of the anode electrode portion 23 including the side wall portion 22 and to the first insulating film layer 21.

[0046] For example, the electrode material M1 forming the main body of the anode electrode part 23 including the side wall part 22 may be an aluminum alloy, a silver alloy, or the like. Furthermore, examples of the electrode material M4) constituting the lower layer portion 23C of the anode electrode portion 23 (anode electrode portion 23 / first insulating film layer 21 junction portion) include indium tin oxide, indium oxide, indium gallium zinc oxide, titanium oxide, titanium nitride, titanium, tantalum nitride, and tantalum.

[0047] According to the fifth embodiment, in addition to the effects of the first embodiment, it is possible to prevent the electrode material M1 forming the main body of the anode electrode portion 23 including the side wall portion 22 from peeling off from the first insulating layer 21, making it possible to configure a more reliable organic EL pixel element.

[0048] [6] Sixth embodiment FIG. 10 is an explanatory diagram of the basic configuration of an organic EL pixel element according to the sixth embodiment. The organic EL pixel element of the sixth embodiment differs from the organic EL pixel element of the first embodiment in that, instead of the side wall portion 22, a side wall portion 22-2 is formed from an electrode material different from the electrode material of the upper layer portion 23B (organic EL layer 25 / anode electrode portion 23 junction) of the anode electrode portion 23, the upper layer portion 23F (organic EL layer 25 / anode electrode portion 23 junction) of the anode electrode portion 23 is formed from an electrode material different from the electrode material of the main body 23E of the anode electrode portion 23, and the lower layer portion 23C (anode electrode portion 23 / first insulating film layer 21 junction) of the anode electrode portion 23 is formed from an electrode material different from the electrode material of the main body portion 23E of the anode electrode portion 23.

[0049] In this case, the processing selection ratio between the electrode material (referred to as electrode material M1) forming the main body 23E of the anode electrode portion 23 and the electrode material (referred to as electrode material M2) of the side wall portion 22-2 is increased so that only the electrode material M1 is processed, thereby improving the shape processing stability of the side wall portion 22-2.

[0050] Furthermore, the electrode material M3 of the upper layer 23F of the anode electrode section 23 (the organic EL layer 25 / anode electrode section 23 junction) is made to be a material that has high carrier injection properties into the organic EL layer 25. Furthermore, as the electrode material (referred to as electrode material M4) constituting the lower layer 23C (anode electrode portion 23 / first insulating film layer 21 junction portion) of the anode electrode portion 23, a material having high adhesion to the electrode material M1 forming the main body portion 23E of the anode electrode portion 23 and the first insulating film layer 21 is used. For example, the electrode material M1 for forming the main body 23E of the anode electrode section 23 may be an aluminum alloy, a silver alloy, or the like.

[0051] Examples of the electrode material M2 of the upper layer 23B of the anode electrode section 23 (the organic EL layer 25 / anode electrode section 23 junction) include indium tin oxide, indium oxide, and indium gallium zinc oxide. Examples of the electrode material M3 that forms the sidewall portion 22-1 include indium tin oxide, indium oxide, indium gallium zinc oxide, titanium oxide, titanium nitride, titanium, tantalum nitride, and tantalum.

[0052] Furthermore, examples of the electrode material M4) constituting the lower layer portion 23C of the anode electrode portion 23 (anode electrode portion 23 / first insulating film layer 21 junction portion) include indium tin oxide, indium oxide, indium gallium zinc oxide, titanium oxide, titanium nitride, titanium, tantalum nitride, and tantalum.

[0053] According to the sixth embodiment, it is possible to obtain the effects of the first, third, fourth and fifth embodiments.

[0054] [7] Seventh embodiment FIG. 11 is an explanatory diagram of the basic configuration of an organic EL pixel element according to the seventh embodiment. The organic EL pixel element of the seventh embodiment differs from the organic EL pixel element of the first embodiment in that, instead of the first insulating film layer 21, a first insulating film layer 21-1 having a convex portion 21-a for forming a sidewall portion 22-3 is provided, and an anode electrode portion 23 is formed having a shape that covers the first insulating film 21-1 from the upper surface.

[0055] According to the seventh embodiment, in addition to the effects of the first embodiment, the convex portion 21-a is formed on the first insulating film layer 21-1, which is relatively easy to process, and the anode electrode portion 23 is formed so as to cover this convex portion 21-a, thereby improving the processability and controllability of the side wall portion 22-3.

[0056] [8] Eighth embodiment FIG. 12 is an explanatory diagram of the basic configuration of an organic EL pixel element according to the eighth embodiment. The organic EL pixel element of the eighth embodiment differs from the organic EL pixel element of the first embodiment in that, instead of the first insulating film layer 21, a first insulating film layer 21-2 having a recess for forming a sidewall portion 22-3 is provided, and an anode electrode portion 23 is formed having a shape that covers the first insulating film 21-1 from above.

[0057] According to the eighth embodiment, in addition to the effects of the first embodiment, a recess is formed in the first insulating film layer 21-1, which is relatively easy to process, and the anode electrode portion 23 is formed so as to cover this recess and the periphery of the recess. This makes it possible to further improve the processability and controllability of the side wall portion 22-4 compared to the seventh embodiment.

[0058] [9] Examples of resonator structures applicable to each embodiment The organic EL pixel element used in the display device according to the present disclosure described above can be configured to have a resonator structure that resonates the light generated in the light-emitting portion ELP. The resonator structure will be described below with reference to the drawings.

[0059] (Resonator structure: 1st example) FIG. 13 is a schematic cross-sectional view for explaining a first example of a resonator structure.

[0060] In the first example, the first electrode (anode electrode portion) 31 is formed to have a common film thickness in each of the organic EL pixel elements 11R, 11G, and 11B. The same is true for the second electrode (cathode electrode portion) 61.

[0061] An optical adjustment layer 72 (=72 R ,72 G ,72 B The organic layer 40 (=40) is disposed between the reflector 71 and the second electrode 61. R ,40 G ,40 B A resonator structure is formed that resonates the light generated by the laser.

[0062] The reflector 71 is formed to have a common film thickness in each light-emitting section 50. The film thickness of the optical adjustment layer 72 varies depending on the color to be displayed by the pixel. R ,72 G ,72 BBy having different film thicknesses, it is possible to set the optical distance that produces the optimum resonance for the wavelength of light corresponding to the color to be displayed.

[0063] In the example shown in the figure, the upper surfaces of the reflectors 71 of the organic EL pixel elements 11R, 11G, and 11B are arranged so as to be flush with each other. R ,72 G ,72 B The film thickness of the second electrode 61 differs depending on the color that the pixel is to display, and therefore the position of the upper surface of the second electrode 61 differs depending on the type of the organic EL pixel elements 11R, 11G, and 11B.

[0064] The reflector 71 can be made of, for example, a metal such as aluminum (Al), silver (Ag), or copper (Cu), or an alloy containing any of these as a main component.

[0065] Optical adjustment layer 72 R ,72 G ,72 B is silicon nitride (SiN x ), silicon oxide (SiO x ), silicon oxynitride (SiO x N y The optical adjustment layer 72 may be made of an inorganic insulating material such as acrylic resin or polyimide resin, or an organic resin material such as acrylic resin or polyimide resin. The optical adjustment layer 72 may be a single layer or a laminated film made of a plurality of these materials. The number of layers may vary depending on the type of light-emitting section 50.

[0066] The first electrode 31 can be formed using a transparent conductive material such as indium tin oxide (ITO), indium zinc oxide (IZO), or zinc oxide (ZnO).

[0067] The second electrode 61 must function as a semi-transmissive reflective film. The second electrode 61 can be formed using magnesium (Mg) or silver (Ag), a magnesium-silver alloy (MgAg) containing these as main components, or an alloy containing an alkali metal or an alkaline earth metal.

[0068] (Resonator structure: 2nd example) FIG. 14 is a schematic cross-sectional view for explaining a second example of the resonator structure.

[0069] In the second example, the first electrode 31 and the second electrode 61 are also formed to have the same film thickness in each light-emitting section 50.

[0070] Also in the second example, a reflector 71 is disposed below the first electrode 31 of the light-emitting section 50, with an optical adjustment layer 72 sandwiched therebetween. A resonator structure that resonates light generated by the organic layer 40 is formed between the reflector 71 and the second electrode 61. As in the first example, the reflector 71 is formed to have the same film thickness in each light-emitting section 50, and the film thickness of the optical adjustment layer 72 differs depending on the color to be displayed by the pixel.

[0071] In the first example shown in Figure 13, the upper surfaces of the reflectors 71 in the organic EL pixel elements 11R, 11G, and 11B are arranged so as to be aligned, and the position of the upper surface of the second electrode 61 differs depending on the type of organic EL pixel element 11R, 11G, and 11B.

[0072] In contrast, in the second example shown in FIG. 14, the upper surface of the second electrode 61 is R ,50 G ,50 B In order to align the upper surfaces of the second electrodes 61, the upper surfaces of the reflectors 71 in the organic EL pixel elements 11R, 11G, and 11B are arranged differently depending on the type of the organic EL pixel elements 11R, 11G, and 11B. For this reason, the lower surface of the reflector 71 (in other words, the surface of the base 73 indicated by reference numeral 73 in the drawing) has a stepped shape depending on the type of the organic EL pixel elements 11R, 11G, and 11B.

[0073] The materials constituting the reflector 71, the optical adjustment layer 72, the first electrode 31, and the second electrode 61 are the same as those described in the first example, and therefore will not be described again.

[0074] (Resonator structure: 3rd example) FIG. 15 is a schematic cross-sectional view for explaining a third example of the resonator structure.

[0075] In the third example as well, the first electrode 31 and the second electrode 61 are formed to have the same film thickness in each of the organic EL pixel elements 11R, 11G, and 11B.

[0076] In the third example, an optical adjustment layer 72 (=72 R ,72 G ,72 B ) is sandwiched between the reflector 71 (=71 R ,71 G ,71 B ) is disposed between the reflector 71 and the second electrode 61. R ,40 G ,40 B As in the first and second examples, the optical adjustment layer 72 R ,72 G ,72 B The film thickness of the second electrode 61 varies depending on the color to be displayed by the pixel. As in the second example, the organic EL pixel elements 11R, 11G, and 11B are arranged so that the positions of the upper surfaces of the second electrodes 61 are aligned.

[0077] In the second example shown in FIG. 14, in order to align the upper surfaces of the second electrodes 61, the lower surface of the reflector 71 has a stepped shape according to the type of organic EL pixel elements 11R, 11G, 11B.

[0078] In contrast to this, in the third example shown in FIG. 15, the reflector 71 (=71 R ,71 G ,71 B The thickness of the reflector 71 is set to vary depending on the type of the organic EL pixel elements 11R, 11G, and 11B. R ,71 G ,71 B The film thickness is set so that the bottom surfaces of the

[0079] The materials constituting the reflector 71, the optical adjustment layer 72, the first electrode 31, and the second electrode 61 are the same as those described in the first example, and therefore will not be described again.

[0080] (Resonator structure: 4th example) FIG. 16 is a schematic cross-sectional view for explaining a fourth example of the resonator structure.

[0081] In the first example shown in Figure 13, the first electrodes 31 and second electrodes 61 of each organic EL pixel element 11R, 11G, and 11B are formed with a common film thickness, and a reflector 71 is arranged below the first electrodes 31 of the organic EL pixel elements 11R, 11G, and 11B with an optical adjustment layer 72 sandwiched therebetween.

[0082] In contrast to this, in the fourth example shown in FIG. 16, the optical adjustment layer 72 is omitted, and the film thickness of the first electrode 31 is set to differ depending on the type of the organic EL pixel elements 11R, 11G, and 11B.

[0083] The reflector 71 is formed to have the same thickness for each of the organic EL pixel elements 11R, 11G, and 11B. R ,31 G ,31 B The thickness of the first electrode 31 varies depending on the color that the pixel is to display. R ,31 G ,31 B By having different film thicknesses, it is possible to set the optical distance that produces the optimum resonance for the wavelength of light corresponding to the color to be displayed.

[0084] The materials constituting the reflector 71, the optical adjustment layer 72, the first electrode 31, and the second electrode 61 are the same as those described in the first example, and therefore will not be described again.

[0085] (Resonator structure: 5th example) FIG. 17 is a schematic cross-sectional view illustrating a fifth example of the resonator structure.

[0086] In the first example shown in FIG. 13, the first electrode 31 and the second electrode 61 are formed to have the same film thickness in each light-emitting section 50, and an optical adjustment layer 72 (=72 R ,72 G ,72 B ) and a reflector 71 was placed between them.

[0087] In contrast to this, in the fifth example shown in FIG. 17, the optical adjustment layer 72 (=72 R ,72 G ,72 B ) is omitted, and instead, an oxide film 74 (=74 R ,74 G ,74 B ) was formed. Oxide film 74 R ,74 G ,74 B The film thickness was set to be different depending on the type of the organic EL pixel elements 11R, 11G, and 11B.

[0088] The thickness of the oxide film 74 varies depending on the color that the pixel is to display. R ,74 G ,74 B By having different film thicknesses, it is possible to set the optical distance that produces the optimum resonance for the wavelength of light corresponding to the color to be displayed.

[0089] The oxide film 74 is a film obtained by oxidizing the surface of the reflector 71, and is made of, for example, aluminum oxide, tantalum oxide, titanium oxide, magnesium oxide, zirconium oxide, etc. The oxide film 74 functions as an insulating film for adjusting the optical path length (optical distance) between the reflector 71 and the second electrode 61.

[0090] The oxide film 74, which has a different thickness depending on the type of organic EL pixel element 11R, 11G, 11B, can be formed, for example, as follows.

[0091] First, a container is filled with an electrolyte, and the substrate on which the reflector 71 is formed is immersed in the electrolyte. An electrode is also disposed so as to face the reflector 71.

[0092] Then, a positive voltage is applied to the reflector 71 with the electrode as a reference, and the reflector 71 is anodized. The thickness of the oxide film formed by anodization is proportional to the voltage value applied to the electrode. R , 71 G , 71 B Anodic oxidation is performed while applying a voltage to each of the organic EL pixel elements 11R, 11G, and 11B according to the type of the element. R ,74 G ,74 B can be formed all at once.

[0093] The materials constituting the reflector 71, the first electrode 31, and the second electrode 61 are the same as those described in the first example, and therefore will not be described again.

[0094] (Resonator structure: 6th example) FIG. 18 is a schematic cross-sectional view for explaining a sixth example of the resonator structure.

[0095] In the sixth example, the organic EL pixel elements 11R, 11G, and 11B are configured by laminating a first electrode 31, an organic layer 40, and a second electrode 61. However, in the sixth example, the first electrode 31 is formed so as to function both as an electrode and a reflector. Therefore, the first electrode (also serving as a reflector) 31 (=31 R ,31 G ,31 B ) is made of a material having an optical constant selected according to the type of organic EL pixel elements 11R, 11G, and 11B. By varying the phase shift caused by the first electrode (which also serves as a reflector) 31, it is possible to set the optical distance that produces optimal resonance for the wavelength of light corresponding to the color to be displayed.

[0096] The first electrode (also serving as a reflector) 31 can be made of a single metal such as aluminum (Al), silver (Ag), gold (Au), or copper (Cu), or an alloy containing these as a main component. For example, the first electrode (also serving as a reflector) 31 of the organic EL pixel element 11R can be made of a single metal such as aluminum (Al), silver (Ag), gold (Au), or copper (Cu). R is formed of copper (Cu), and the first electrode (also serving as a reflector) 31 of the organic EL pixel element 11G is formed. G and the first electrode (also serving as a reflector) 31 of the organic EL pixel element 11B. B The insulating film 11 may be made of aluminum.

[0097] The material constituting the second electrode 61 is the same as that described in the first example, and therefore a description thereof will be omitted.

[0098] (Resonator structure: 7th example) FIG. 19 is a schematic cross-sectional view for explaining a seventh example of the resonator structure.

[0099] In the seventh example, the organic EL pixel elements 11R and 11G basically have the same configuration as in the sixth example, and the organic EL pixel element 11B has the same configuration as in the first example. Even in this configuration, it is possible to set the optical distance that produces the optimal resonance for the wavelength of light corresponding to the color to be displayed.

[0100] First electrode (also serving as a reflector) 31 used in the organic EL pixel elements 11R and 11G R ,31 G The can be made of a single metal such as aluminum (Al), silver (Ag), gold (Au), or copper (Cu), or an alloy containing these as the main component.

[0101] Reflector 71 used in organic EL pixel element 11B B , optical adjustment layer 72 B and the first electrode 31 B The materials constituting the second embodiment are the same as those explained in the first example, and therefore will not be explained further.

[0102] FIG. 20 is an explanatory diagram showing the appearance of the display module. The display device 10 of each of the above embodiments is incorporated into various electronic devices such as application examples 1 to 5 described below as a display module 30 as shown in Fig. 20. This display module 30 is particularly suitable for devices that require high resolution and are used in close proximity to the eyes for magnification, such as viewfinders for video cameras and single-lens reflex cameras, or head-mounted displays.

[0103] In this display module 30, for example, external connection terminals (not shown) are formed by extending the wiring of the signal line drive circuit 12 and the scanning line drive circuit 13 of the display device 10 at one end of the sealing substrate 21, and a flexible printed circuit (FPC) 31 for inputting and outputting signals is provided at the external connection terminals. Note that it is also possible to wire to the external connection terminals provided at one end of the sealing substrate 21 without providing the flexible printed circuit 31.

[0104] (Application example 1) FIG. 21 is an explanatory diagram showing the appearance of a display device to which the display device of the embodiment is applied. A display device (including a television device) 40 has, for example, an image display screen section 43 including a front panel 41 and a filter glass 42, and this image display screen section 43 is composed of a display device 10 according to each embodiment.

[0105] (Application example 2) FIG. 22 is an explanatory diagram showing the appearance of a digital camera to which the display device of the above embodiment is applied. The digital camera 50 has, for example, a shutter button 51, a light emitting unit 52 for a flash, a display device 10, and a menu switch 53.

[0106] (Application example 3) FIG. 19 is an explanatory diagram showing the appearance of a notebook personal computer to which the display device of the embodiment is applied. The notebook personal computer 60 has, for example, a display unit 61, a keyboard 62 for inputting characters, etc., and a main body unit 63, and the display unit 61 is configured to include the display device 10 according to each embodiment.

[0107] (Application example 4) FIG. 24 is an explanatory diagram showing the appearance of a video camera to which the display device of the embodiment is applied. The video camera 70 has, for example, a display unit 71, a start / stop switch 72, a lens 73, and a main body unit 74, and the display unit 71 is configured to include the display device 10 according to each embodiment.

[0108] (Application example 5) FIG. 25 is an explanatory diagram of the appearance of a head-mounted display to which the display device of the embodiment is applied. The head-mounted display 80 includes, for example, a glasses-type display unit 81, ear hook members 82 and 83 provided on both sides of the display unit 81 for attaching the head-mounted display 80 to the user's head, and a cable unit 84 for inputting display signals to the head-mounted display 80. In the above configuration, the display device 10 of the embodiment is used as the display unit 81.

[0109] Although the present technology has been described above by giving embodiments and modifications thereof, the present technology is not limited to the above-described embodiments, and various modifications are possible.

[0110] The effects described in this specification are merely examples and are not limiting, and other effects may also be present.

[0111] The present technology can also be configured as follows. (1) an anode electrode portion having a convex sidewall portion formed along the periphery of the organic EL pixel; an insulating film layer covering an outer edge of the anode electrode portion so as to cover the sidewall of the sidewall portion on the light-emitting portion side of the organic EL pixel with a predetermined thickness; an organic EL layer laminated so as to cover the insulating film layer and the upper surface of the anode electrode portion; a cathode electrode portion laminated on an upper surface of the organic EL layer; A light-emitting element comprising: (2) The anode electrode portion includes an anode electrode main body portion and a side wall portion formed of an electrode material different from that of the anode electrode main body portion. The light-emitting element according to (1), comprising: (3) the electrode material constituting the anode electrode body is a material having a higher processing selectivity than the electrode material of the side wall portion; The light-emitting element according to (2). (4) the anode electrode unit has an anode electrode main body and a side wall portion formed of an electrode material different from that of the anode electrode main body, and is stacked on top of the anode electrode main body; The light-emitting element according to (1), comprising: (5) The light-emitting device according to (4), wherein the anode electrode portion includes a first characteristic layer laminated on the anode electrode main body portion. (6) the anode electrode body is formed of a material having a reflectance higher than a predetermined reflectance, the first characteristic layer is formed of a material having a predetermined high carrier injection property; The light-emitting element according to (5). (7) The anode electrode part includes an anode electrode main body part, a side wall part formed of an electrode material different from that of the anode electrode main body part, and a second characteristic layer laminated below the anode electrode main body part. The light-emitting element according to (1), comprising: (8) the second characteristic layer is made of a material that has high adhesiveness to a second insulating film on which the anode electrode portion is laminated; The light-emitting element according to (7). (9) a first insulating film layer having a convex portion along the periphery of the organic EL pixel; an anode electrode portion covering the first insulating film layer and having a convex sidewall portion formed along the convex portion; a second insulating film layer covering an outer edge of the anode electrode portion so as to cover the sidewall of the sidewall portion on the light-emitting portion side of the organic EL pixel with a predetermined thickness; an organic EL layer laminated so as to cover the insulating film layer and the upper surface of the anode electrode portion; a cathode electrode portion laminated on an upper surface of the organic EL layer; A light-emitting element comprising: (10) a first insulating film layer having a recess along the periphery of the organic EL pixel; an anode electrode portion that covers the first insulating film layer and has a convex sidewall portion formed along the outer periphery of the recess; a second insulating film layer covering an outer edge of the anode electrode portion so as to cover the sidewall of the sidewall portion on the light-emitting portion side of the organic EL pixel with a predetermined thickness; an organic EL layer laminated so as to cover the insulating film layer and the upper surface of the anode electrode portion; a cathode electrode portion laminated on an upper surface of the organic EL layer; A light-emitting element comprising: (11) When a straight line is drawn connecting a point on the boundary between the anode electrode portion and the second insulating film layer to the cathode electrode portion at the shortest distance, the angle formed by the line and the upper surface of the anode electrode portion 23 is defined as θ, and the thickness of the second insulating film layer facing the inner wall portion of the side wall portion is set so that when an arbitrary potential difference is applied between the anode electrode portion and the cathode electrode portion, the angle formed by the electric field vector formed at the point on the boundary and the upper surface of the anode electrode portion is θ or less. The light-emitting device according to any one of (1) to (10). (12) a plurality of light-emitting elements arranged in a matrix and each connected to a signal line and a scanning line; a signal line driver circuit for driving the signal lines; a scanning line driving circuit that drives the scanning lines; a current source that supplies a current to the light-emitting element; Equipped with The light-emitting element includes an anode electrode portion having a convex sidewall portion formed along the periphery of an organic EL pixel, an insulating film layer covering the outer edge of the anode electrode portion so as to cover the sidewall of the sidewall portion on the light-emitting portion side of the organic EL pixel with a predetermined film thickness, an organic EL layer laminated so as to cover the insulating film layer and an upper surface of the anode electrode portion, and a cathode electrode portion laminated on the upper surface of the organic EL layer. Display device. (13) Organic EL pixels have a resonator structure that resonates the light generated in the light-emitting area. The display device according to (12). (14) (12) An electronic device equipped with the display device described above. [Explanation of symbols]

[0112] 10 Display device 11R, 11G, 11B organic EL pixel elements 12 Signal line driver circuit 13 Scanning line driving circuit 14 Current source 21 First insulating film layer 22 Side wall 22A Outer wall 22C Inner wall 23 Anode electrode part 24 Second insulating film layer 25 Organic EL layer 26 Cathode electrode part 31,31 R ,31 G ,31 B 1st electrode 40,40 R ,40 G ,40 B organic layer 61 2nd electrode 71,71 R ,71 G ,71 B reflector 72 R ,72 G ,72 B optical adjustment layer 73 Base surface 74R ,74 G ,74 B oxide film

Claims

1. A plurality of pixels arranged in a matrix, At least one of the plurality of pixels A reflector and a first insulating film disposed on the reflector; a first electrode disposed on the first insulating film; a second insulating film disposed on at least a peripheral portion of the first electrode; an organic layer disposed on the second insulating film; a second electrode disposed on the organic layer; Equipped with the first insulating film has, for each pixel, a first portion corresponding to a light-emitting portion of the pixel, and a first convex portion and a second convex portion that protrude from an upper surface of the first portion toward the second electrode in a non-light-emitting portion of the pixel, in a cross-sectional view; the first convex portion and the second convex portion included in the same pixel are located with a light-emitting portion of the pixel interposed therebetween in the cross-sectional view, the first electrode covers at least a part of a surface of the first convex portion and the second convex portion included in the same pixel, the surface facing the light-emitting portion; the second insulating film covers at least a part of the surfaces of the first convex portion and the second convex portion that are covered by the first electrode and that face the light emitting portion, In a pair of adjacent pixels among the plurality of pixels, the first convex portion of one of the adjacent pixels and the second convex portion of the other adjacent pixel are physically separated by the second insulating film. Light-emitting element.

2. each of the first convex portion and the second convex portion has an upper surface, a first side surface facing a central portion of the pixel, and a second side surface facing a pixel adjacent to the pixel; the first electrode extends from a light-emitting region of the pixel to at least a portion of the top surface; The light-emitting device according to claim 1 .

3. the second electrode covers a part of the upper surface of each of the first convex portion and the second convex portion covered by the first electrode; The light-emitting device according to claim 2 .

4. the plurality of pixels include a first pixel, a second pixel, and a third pixel; a distance from an upper surface of the reflector to a lower surface of the first electrode in each of the pixels differs between the first pixel, the second pixel, and the third pixel; The light-emitting device according to any one of claims 1 to 3.

5. the positions of the lower surfaces of the reflectors in the height direction of the first pixel, the second pixel, and the third pixel are aligned with each other; The light-emitting device according to claim 4 .

Images