Uniform plasma linear ion source

Abstract

An ion source. The ion source may include a plasma chamber for containing a plasma and an extraction assembly disposed along a side of the plasma chamber and including at least one extraction aperture. The ion source may further include an antenna assembly extending through the plasma chamber along a first axis. The antenna assembly may include a dielectric enclosure and a plurality of conductive antennas extending along the first axis within the dielectric enclosure.

Description

[Technical Field]

[0001] CROSS-REFERENCE TO RELATED APPLICATIONS This application claims priority to U.S. Non-Provisional Patent Application No. 17 / 476,200, filed September 15, 2021, entitled "UNIFORM PLASMA LINEAR ION SOURCE," which is incorporated herein by reference in its entirety.

[0002] FIELD OF THE DISCLOSURE The present disclosure relates generally to processing equipment, and more particularly to plasma-based ion sources. [Background technology]

[0003] In modern times, plasmas are used to process substrates, such as electronic devices, for applications such as substrate etching, layer deposition, ion implantation, and other processes. Some processing equipment employs a plasma chamber to generate a plasma that acts as an ion source for substrate processing. An ion beam can be extracted through an extraction assembly and directed toward a substrate in an adjacent chamber. This plasma can be generated in a variety of ways.

[0004] In various commercial systems, an antenna is disposed outside the plasma chamber, adjacent to a dielectric window. The antenna is then excited using an RF power supply. Electromagnetic energy generated by the antenna then passes through the dielectric window to excite a feed gas disposed within the plasma chamber. This configuration provides a relatively simple structure and can generate a high-density plasma suitable for generating a high-current ion beam using extraction through an extraction aperture, which may be centrally located within the plasma chamber. However, such plasmas can tend to have peak plasma density in the middle of the chamber and may not be ideal for multi-aperture, high-current ion beam systems in which two or more apertures are arranged as parallel slots along one edge of the plasma chamber.

[0005] In another known approach, two antennas may be disposed within the plasma chamber, sometimes referred to as internal antennas. As in the previous embodiment, an RF power supply is electrically coupled to the internal antennas. These internal antennas each include an outer tube, which may be quartz or another dielectric material, to form two antenna structures extending into the plasma. A conductive coil is disposed within the outer tube, and typically spaced apart from the outer tube. The RF power supply is electrically coupled to the coil, which emits electromagnetic energy through the outer tube, generating plasma within the plasma chamber. However, plasma generated using two antenna structures may not be as uniform as desired throughout the plasma chamber. For example, plasma density may be greater near the internal antenna and reduced in areas away from the internal antenna.

[0006] This plasma non-uniformity can affect the extracted ion beam: for example, rather than extracting an ion beam with a constant ion density across its width, the ion beam may have a greater concentration of ions in a first portion, such as near the center, than in a second portion, such as at its edge.

[0007] To address this issue, approaches have been proposed in which multiple antenna structures can be moved within the plasma. However, such approaches require the movement of a dielectric outer tube that houses the antenna structures, which can provide a less-than-robust design. Furthermore, the generated plasma uniformity can still be lower than the targeted uniformity for multi-aperture processing systems.

[0008] It is with respect to these and other considerations that the present disclosure is provided. Summary of the Invention

[0009] Various embodiments are directed to an antenna assembly, an ion source, and a processing device. In one embodiment, the ion source may include a plasma chamber for containing a plasma and an extraction assembly disposed along a side of the plasma chamber and including at least one extraction aperture. The ion source may further include an antenna assembly extending through the plasma chamber along a first axis. The antenna assembly may include a dielectric enclosure and a plurality of conductive antennas extending along the first axis within the dielectric enclosure.

[0010] In another embodiment, a processing system is provided that includes a plasma chamber for containing a plasma and an extraction assembly disposed along a side of the plasma chamber and including at least one extraction aperture. The processing system may also include an antenna assembly extending through the plasma chamber along a first axis. The antenna assembly may include a dielectric enclosure and multiple conductive antennas extending within the dielectric enclosure along the first axis. The processing system may further include a process chamber adjacent to the extraction assembly, the process chamber including a substrate stage that is scannable along a scan direction perpendicular to the first axis. The processing system may further include a power generator connected to the antenna assembly.

[0011] In a further embodiment, an antenna assembly for an inductively coupled ion source is provided that includes a dielectric enclosure extending along a first direction from a first end to a second end. The antenna assembly may include a first conductive antenna extending through the dielectric enclosure from the first end to the second end and a second conductive antenna extending through the dielectric enclosure from the first end to the second end. As such, at least one of the first conductive antenna and the second conductive antenna may be movable within the dielectric enclosure along at least a second direction perpendicular to the first direction. [Brief explanation of the drawings]

[0012] [Figure 1] FIG. 1 illustrates an end view of an exemplary system in a first configuration, according to an embodiment of the present disclosure. [Figure 2A] FIG. 2 is an end view of an exemplary plasma chamber in a first configuration, according to an embodiment of the present disclosure. [Figure 2B] FIG. 1 is a plan view of an extraction assembly according to an embodiment of the present disclosure. [Figure 2C] FIG. 2B is a side view of the exemplary plasma chamber of FIG. 2A. [Figure 2D] FIG. 2B is a plan view of the exemplary plasma chamber of FIG. 2A. [Figure 2E] 2B is an end view of the exemplary plasma chamber of FIG. 2A in a second configuration, in accordance with an embodiment of the present disclosure. [Figure 3A] FIG. 10 is a composite diagram showing simulated plasma densities in a reference plasma chamber with known antenna configurations. [Figure 3B] FIG. 10 is a composite diagram illustrating simulated plasma density in a plasma chamber with an antenna assembly according to the present embodiments. [Figure 4A] 1A and 1B present an exemplary structure of a dielectric enclosure for an antenna assembly according to one embodiment of the present disclosure. [Figure 4B] 10A-10C present an exemplary structure of a dielectric enclosure for an antenna assembly according to another embodiment of the present disclosure. [Figure 4C] 10A-10C present an exemplary structure of a dielectric enclosure for an antenna assembly according to a further embodiment of the present disclosure. [Figure 4D] 10A-10C present an exemplary structure of a dielectric enclosure for an antenna assembly according to an additional embodiment of the present disclosure. [Figure 5] FIG. 2 is a plan view of an exemplary antenna configuration for an antenna assembly, according to one embodiment of the present disclosure. [Figure 6] FIG. 10 is a plan view of an exemplary antenna configuration for an antenna assembly according to another embodiment of the present disclosure. [Figure 7] FIG. 10 is an end view of an exemplary antenna assembly according to another embodiment of the present disclosure. [Figure 8] FIG. 2 is a plan view of an exemplary antenna assembly according to another embodiment of the present disclosure. [Figure 9] FIG. 10 is a plan view of another exemplary antenna assembly in accordance with another embodiment of the present disclosure. DETAILED DESCRIPTION OF THE INVENTION

[0013] The drawings are not necessarily to scale. The drawings are representational only and do not depict specific parameters of the present disclosure. The drawings depict exemplary embodiments of the present disclosure and therefore should not be considered limiting in scope. In the drawings, like numbering represents like elements.

[0014] Apparatus, systems, and methods according to the present disclosure will now be described more fully hereinafter with reference to the accompanying drawings, in which embodiments of the systems and methods are shown. The systems and methods may be embodied in many different forms and should not be construed as limited to the embodiments set forth herein. Instead, these embodiments are provided so that this disclosure will be thorough and complete, and will fully convey the scope of the systems and methods to those skilled in the art.

[0015] Terms such as "top," "bottom," "upper," "lower," "vertical," "horizontal," "lateral," and "vertical" may be used herein to describe the relative placement and orientation of components and their constituent parts with respect to the geometry and orientation of the components of a semiconductor manufacturing device as they appear in the figures. The terminology may include the specifically mentioned words, derivatives thereof, and words of similar import.

[0016] As used herein, elements or operations recited in the singular and preceded by the word "a" or "an" should be understood to potentially include a plurality of elements or operations. Furthermore, references to "one embodiment" of the present disclosure should not be interpreted as excluding the existence of additional embodiments that also incorporate the recited features.

[0017] Provided herein are approaches for improved plasma uniformity in processing equipment, particularly in compact ion beam processing equipment. The present embodiments may be suitable for applications where plasma uniformity at the point of ion beam extraction is useful across one or more directions.

[0018] 1 shows an end view of an exemplary system in a first configuration according to an embodiment of the present disclosure. The system, referred to herein as processing system 100, is suitable for ion beam processing of a substrate 132. System 100 includes a plasma chamber 102 for containing a plasma 106 and a power generator 104 coupled to provide power to generate plasma 106 when a suitable gaseous species (not shown separately) is supplied to plasma chamber 102. Power generator 104 can be, for example, an RF power generator.

[0019] To process substrate 132, an extractor assembly 120 is provided along the side of plasma chamber 102 and includes at least one extraction aperture that generates a corresponding ion beam, shown as ion beam 134. In the example of Figure 1, four extraction apertures are shown for illustrative purposes, although any suitable number of extraction apertures may be included in an extractor assembly according to this embodiment.

[0020] The processing system 100 further includes an antenna assembly 110 that extends through the plasma chamber 102 along a first axis (in this case, the x-axis of the illustrated Cartesian coordinate system). Further details of variations of the antenna assembly 110 are shown with respect to FIGS. 2C and 2D , described below. Briefly, the antenna assembly 110 includes a dielectric enclosure 114, which may be formed from a suitable insulating material (e.g., quartz) that acts as a dielectric window. The antenna assembly 110 may further include multiple conductive antennas that extend along the first axis (x-axis) within the dielectric enclosure 114. In the illustrated example, the multiple conductive antennas include a first antenna 116 and a second antenna 118.

[0021] Thus, the power generator 104, the plasma chamber 102, the antenna assembly 110, and the extraction assembly 120 may comprise an ion source that is used to generate at least one ion beam for processing the substrate 132. During operation, the power generator 104 is coupled to the first antenna 116 and the second antenna 118 to power the plasma 106, such as through inductive coupling of the first antenna 116 and the second antenna 118 to the plasma 106.

[0022] More specifically, when process gas is directed into the plasma chamber 102, power is applied to the first antenna 116 and the second antenna 118 such that a plasma 106 is ignited in the plasma chamber 102. For example, with reference to Figures 2C and 2D, the first antenna 116 and the second antenna 118 may be connected (directly or through circuit elements) on a first side 150 of the plasma chamber 102 and attached to the power generator 104 on a second side 152 of the plasma chamber 102.

[0023] When a bias voltage is applied by the extraction voltage supply 126 between the plasma chamber 102 and the substrate 132 or substrate holder 130 (these components may be disposed in the process chamber 108), the ion beam(s) 134 are extracted through the extraction aperture 122 (see also FIG. 2B ) and directed toward the substrate 132. In different embodiments, the extraction voltage supply 126 may operate to apply a pulsed DC bias voltage or an RF bias voltage between the substrate 132 and the plasma chamber 102. Moreover, in some embodiments, the extraction assembly 120 may include a beam blocker (not shown), as in known plasma processing systems, to extract an angled ion beam through the extraction aperture 122, such that the ion beam 134 may form a non-zero angle of incidence with respect to the substrate normal (z-axis).

[0024] 2A, 2C, and 2D, different views of the plasma chamber 102, including the antenna assembly 110, are shown. In the view of FIG. 2A, a plasma 106 is present, but for clarity, the plasma 106 is omitted from FIGS. 2C and 2D. As shown in FIG. 2A, the plasma 106 extends around the dielectric enclosure 114. In one implementation, the dielectric enclosure 114 may be located midway through the plasma chamber 102 along the y-direction. Thus, the plasma 106 may generally extend symmetrically in the y-direction around the dielectric enclosure 114. As shown in FIGS. 2C and 2D, the dielectric enclosure 114 may extend completely from the first end 160 to the second end 162 and from the first side 150 to the second side 152. Thus, the antenna assembly 110 may also extend completely through the plasma chamber 102 from the first side 150 to the second side 152 .

[0025] As described in more detail below with respect to FIG. 3B , the presence of the dielectric enclosure 114 in the middle of the plasma chamber 102 (at least in the y-direction) can tend to modify the shape and distribution of the plasma 106. For example, the presence of the dielectric enclosure 114 can tend to displace the high-density region of the plasma 106 outward toward the walls 141 and 142. For example, the diameter of the dielectric enclosure 114, according to some non-limiting embodiments, can correspond to 10% to 50% of the width of the plasma chamber 102 along the y-direction. As a result, by displacing a portion of the plasma from the normally high-density plasma middle region, the overall uniformity of the plasma 106 along the y-direction can be improved.

[0026] According to various embodiments of the present disclosure, the dielectric enclosure 114 may be movable within the plasma chamber 102, such as along the y-axis, or along the z-axis, or along both axes. In this manner, the distribution and uniformity of the plasma 106 may be adjusted.

[0027] In some embodiments, at least one antenna of the multiple antennas within the dielectric enclosure 114 may be movable within the dielectric enclosure 114. In other words, the at least one antenna may be independently movable relative to the walls of the dielectric enclosure 114 either along the y-axis, along the z-axis, or along both axes. In particular embodiments, both the first antenna 116 and the second antenna 118 may be movable within the dielectric enclosure 114. In other words, the first antenna 116 and the second antenna 118 may be independently movable relative to the walls of the dielectric enclosure 114 either along the y-axis, along the z-axis, or along both axes. In various embodiments, the first antenna 116 and the second antenna 118 may be independently movable relative to the walls of the dielectric enclosure 114, and one antenna may be independently movable relative to the other either along the y-axis, along the z-axis, or both.

[0028] 2A, the first antenna 116 and the second antenna 118 may be movable within the dielectric enclosure 114 along the y-axis to an extent indicated by arrow d, which is approximately the diameter of the dielectric enclosure 114. For example, the first antenna 116 and the second antenna 118 may be movable toward opposite walls of the dielectric enclosure, which may thus increase the space between the first antenna 116 and the second antenna 118, or alternatively, may be brought into close proximity to one another, as shown in the configuration of FIG.

[0029] 1, the antenna assembly 110, or a similar assembly, can be coupled to a movement mechanism 140 that is coupled to move the first antenna 116, the second antenna 118, the dielectric enclosure 114, or any combination of these elements in concert with or relative to one another. The movement mechanism 140, according to some non-limiting embodiments, can be, for example, an external motor, actuator, mechanical lever, slide, or magnetic component. Thus, the movement mechanism 140 can provide a convenient way to manipulate the relative positions of these components of the antenna assembly 110 within the plasma chamber 102.

[0030] By providing relative movement between the first antenna 116 and the second antenna 118 within the dielectric enclosure 114, the distribution and density of the plasma 106 can be advantageously manipulated. To further illustrate this point, FIG. 3A provides a composite diagram showing simulated plasma density in a reference plasma chamber having a known antenna configuration, and FIG. 3B provides a composite diagram showing simulated plasma density in a plasma chamber having an antenna assembly according to the present embodiment. In the diagram of FIG. 3A, an external antenna assembly 304 circumferentially surrounds the plasma chamber 302 to generate a plasma 306 therein. The plasma chamber 302 is overlaid with an image of the plasma 306, which is shown in cross-section along the yz plane, with the plasma density indicated by different shading. As shown, the density is 3E14 / cm on the outermost edge of the plasma chamber 302. 3 From the range, the mean E17 / cm at the center of the plasma chamber 302 3 It fluctuates up to.

[0031] In the illustration of Figure 3B, the antenna assembly 110 is disposed within the plasma chamber 102, generally as described above. The plasma chamber 102 is overlaid with an image of the plasma 106, shown in cross section along the yz plane, with the plasma density indicated by different shading. As shown, the density of the bulk of the plasma 106 is greater than E16 / cm 3 Range from E17 / cm 3 The plasma density varies over a range, with the plasma density generally being higher towards the lower portion of the plasma chamber 102 .

[0032] More germane to uniformity concerns for substrate processing, the uniformity of plasma density along the y-direction along the lower edge of the plasma chamber is improved in the example of Figure 3B. More specifically, in the example of Figure 3A, the uniformity along the y-axis where ion beam extraction occurs is 18.5%, and in Figure 3B, the uniformity along the y-axis where ion beam extraction occurs is 1%, where uniformity is expressed as (maximum extraction current value - minimum extraction current value) / average extraction current value.

[0033] Referring specifically to FIG. 3B , this composite diagram highlights several features provided by this embodiment. In this example, the diameter of the dielectric enclosure 114 is approximately 7 cm, which provides a large volume for accommodating the relative displacement of the first antenna 116 and the second antenna 118. This relative movement enables the ability to modulate the inductive coupling of the first antenna 116 and / or the second antenna 118 to the plasma 106 disposed outside the dielectric enclosure 114, thus providing a convenient manner for manipulating the density and distribution of the plasma 106. In the particular example shown, the antennas are displaced laterally from one another by approximately 5 cm. In other embodiments, depending on the gas species, plasma power, and other factors, the relative positions of the antennas may be varied, such as by placing the antennas closer to one another or at different positions along the z-axis, to adjust the plasma density uniformity accordingly.

[0034] 1 , in applications requiring uniform ion beam treatment across the substrate 132, during operation, the extraction aperture(s) 122 may be extended along the x-axis, such as to cover the entire substrate 132 along the X-direction as shown. For example, in some non-limiting embodiments, the extraction aperture(s) may have a width along the y-direction on the order of a few millimeters to a few centimeters, and a length along the x-direction of tens of centimeters. To cover the entire substrate, such as a semiconductor wafer having a diameter of tens of centimeters, the substrate holder 130 is scanned along the Y-axis such that the extraction aperture 122 may be scanned across the entire substrate 132 in the y-direction, which may thus expose the entire substrate 132 to the ion beam 134.

[0035] To increase the beam current applied to the substrate 132, multiple extraction apertures 122 are provided in the plasma chamber 102 according to an embodiment of the present disclosure. Therefore, the beam current directed to the substrate 132 is equal to the sum of the beam currents directed through the individual extraction apertures. Note that in a situation where the beam current is uniform across the x-axis, scanning the entire substrate 132 under the entire extraction assembly, for example, from point P1 to point P2, will expose the substrate 132 to a uniform ion dose. This result also holds true in a situation where the plasma density is non-uniform along the y-direction, resulting in different beam currents impinging on the substrate 132 from different extraction apertures, as in FIG. 3A . The reason the beam dose across the substrate 132 is uniform when exposed to different apertures with different beam currents is because the beam current is uniform in the x-direction. Furthermore, each point on the substrate 132 along the y-direction is successively exposed to the same aperture, resulting in the same total ion dose impinging on any region of the substrate 132 after exposure to all apertures. Therefore, to achieve dose uniformity in a scanned substrate exposed to a multi-extraction aperture plasma chamber, the plasma density along the x direction should be uniform, while that along the y direction does not, in principle, need to be uniform.

[0036] However, in situations where the plasma density is non-uniform along the y-direction, such as the known device of FIG. 3A , the ion beams extracted from different extraction apertures may differ from each other in ways other than different beam currents. The inventors have realized that in various extraction aperture assemblies, the angle of the ions and the average incidence angle of the extracted ion beams are proportional to the plasma density in the plasma chamber. The shape of the plasma meniscus emerging at the extraction apertures depends on the plasma density, and therefore the average angle of the ion beams exiting the plasma 106 across the plasma meniscus, as well as the range of incidence angles (angular spread), vary with the plasma density. Thus, in a non-uniform plasma chamber such as that of FIG. 3A , a multi-aperture extraction plate may position some extraction apertures at outer positions of relatively lower plasma density, where the incidence angle of the ion beams differs from the incidence angle of the ion beams extracted through extraction apertures located in the middle region of the high-density region of the plasma chamber. The embodiment of FIG. 3B, by providing a uniform plasma density of 1% along the Y direction, allows for both increased beam current as well as a more uniform angle of incidence of ions striking the substrate 132 through different apertures, since the plasma density and meniscus shape are approximately constant as a function of position along the Y axis.

[0037] According to further embodiments of the present disclosure, the shape of the dielectric enclosure of the antenna assembly can be modified to further modify the plasma density in the plasma chamber. Figure 4A shows an exemplary structure of a dielectric enclosure for an antenna assembly according to one embodiment of the present disclosure. In this embodiment, the dielectric enclosure 114A has the shape of a circular cylinder. Figure 4B shows an exemplary structure of a dielectric enclosure 114B for an antenna assembly according to another embodiment of the present disclosure. In this embodiment, the dielectric enclosure 114B has the shape of a cylinder with an elliptical cross section that is elongated along the Y direction, which may be useful for adjusting the plasma uniformity in the Y direction.

[0038] 4C shows an exemplary structure of a dielectric enclosure for an antenna assembly according to a further embodiment of the present disclosure. In this embodiment, the dielectric enclosure 114C has an ellipsoidal shape to increase plasma density near the walls of the plasma chamber in both the X and Y directions. FIG. 4D shows an exemplary structure of a dielectric enclosure for an antenna assembly according to an additional embodiment of the present disclosure. In this embodiment, the dielectric enclosure 114D has a double spherical / inverted ellipsoid shape to create higher plasma density in the central region of the plasma chamber.

[0039] In some embodiments, a pair of conductive antennas may be arranged within a dielectric enclosure, with the antenna pair being closer to each other in the middle portion. To illustrate this point, FIG. 5 presents a plan view of an exemplary antenna configuration for an antenna assembly according to one embodiment of the present disclosure. An embodiment of a plasma chamber 102 is shown in which an antenna assembly 500 includes a dielectric enclosure 502. The dielectric enclosure 502 may be elongated, with a wall extending along the X direction as shown. The conductive antenna pair is shown as antenna 504 and antenna 506, which have an arcuate shape; the conductive antenna pair is curved in the XY plane, and therefore the pair is closer to each other at each end of the conductive antenna pair, meaning that the pair is closer to each other in a region near the wall of the plasma chamber 102 extending along the Y axis. In other words, the conductive antenna pair is disposed farther apart from each other in the middle region, which causes the conductive antenna pair to be closer to the wall of the dielectric enclosure 502 and therefore closer to the plasma 510. This configuration may therefore tend to increase the plasma density in the middle region of the plasma chamber along the x-axis.

[0040] FIG. 6 presents a plan view of an exemplary antenna configuration for an antenna assembly according to another embodiment of the present disclosure.

[0041] An embodiment of a plasma chamber 102 is shown in which an antenna assembly 600 includes a dielectric enclosure 602. The dielectric enclosure 602 may be elongated and have walls extending along the X direction as shown. A pair of conductive antennas is shown as antenna 604 and antenna 606, and the conductive antenna pair is curved in the XY plane, meaning that the pair is disposed closer to each other at a mid-region of the conductive antenna pair, which means that the pair is disposed closer to each other at a mid-region of the plasma chamber 102 extending along the Y axis. In other words, the conductive antenna pair is disposed farther away from the wall of the dielectric enclosure 602, and therefore farther away from the plasma 610, at the mid-region. This configuration may therefore tend to increase plasma density toward the end walls of the plasma chamber 102, which means that the configuration may tend to increase plasma density near walls extending along the Y axis. According to various embodiments of the present disclosure, the antennas in the configurations shown in Figure 5 or 6 may be rotatable about the x-axis, so that the relative proximity between two different antennas along the x-axis can be easily changed. For example, the different configurations of Figures 5 and 6 may be achieved by mutual rotation of the same curved antenna about the x-axis.

[0042] To further manipulate plasma density according to this embodiment, the antenna assembly may include a ferromagnetic insert disposed within the dielectric enclosure. FIG. 7 presents an end view of an exemplary antenna assembly according to another embodiment of the present disclosure. In this example, an antenna assembly 710 is provided extending along the x-axis within the plasma chamber 102, as generally described above with respect to FIGS. 1 and 2A-2D. In addition to the first antenna 116 and the antenna 118, the antenna assembly 710 includes a ferromagnetic insert assembly 712 disposed within the dielectric enclosure 114. The ferromagnetic insert assembly 712 may include only one ferromagnetic insert or may include multiple ferromagnetic inserts according to different embodiments of the present disclosure. In the embodiment shown in FIG. 7, the ferromagnetic insert assembly 712 is disposed between the first antenna 116 and the second antenna 118, and thus may reduce coupling between the first antenna 116 and the second antenna 118. This reduced coupling will increase the efficiency of the plasma chamber 102 during operation.

[0043] 8 presents a top cross-sectional plan view of an exemplary antenna assembly according to another embodiment of the present disclosure. In this example, the antenna assembly 710A may be as generally described with respect to FIG. 7, with a ferromagnetic insert assembly disposed between the first antenna 116 and the second antenna 118. In this example, the ferromagnetic insert assembly 712A includes a single piece that extends along the x-axis across the entire dielectric enclosure 114 to block coupling between the first antenna 116 and the second antenna 118 along the entire dielectric enclosure 114 along the x-axis.

[0044] FIG. 9 presents a top cross-sectional plan view of another exemplary antenna assembly according to another embodiment of the present disclosure. In this example, the antenna assembly 910 includes a ferromagnetic insert 912 shaped as a ferromagnetic cylinder that surrounds intermediate portions of the first antenna 116 and the second antenna 118 to reduce inductive coupling with the plasma 906 at the intermediate portions. In this manner, plasma generation at the center C of the plasma chamber 102 (in the x-direction) is reduced, while plasma generation near the edge O (y-axis wall) is increased. In the illustrated example, the plasma density at the edge O may or may not be greater than the plasma density at the center C. In particular, although inductive coupling from the first antenna 116 and the second antenna 118 is blocked by the ferromagnetic cylinder, plasma still forms at the center C. In one example, plasma formation from the conductive antenna at the center C is reduced in density relative to plasma formation at the edge O, suppressing the increased plasma density at the center C that would otherwise occur, which may lead to a more uniform plasma density along the x-direction.

[0045] Moreover, in addition to adjusting the plasma density along the x-direction using the ferromagnetic insert 912, in the embodiment of FIG. 9, the first antenna 116 and the second antenna 118 are movable along the y-axis within the range indicated by "d" to adjust the plasma density uniformity along the y-direction.

[0046] It should be noted that the above-described embodiments have emphasized the ability to improve plasma uniformity by adjusting the dielectric enclosure geometry and shape, the antenna placement, and the placement of the ferromagnetic insert within a single large dielectric enclosure. However, the same embodiments provide the ability to adjust plasma non-uniformity by adjusting the same components when a targeted non-uniform plasma density is useful for substrate processing.

[0047] In view of the above, the present disclosure provides at least the following advantages. First, the present embodiment provides easy access to the conductive antenna within a single, large dielectric enclosure for maintenance or placement purposes. Second, adjustment of plasma density within the plasma chamber is enabled by providing easy adjustment to the position of the conductive antenna within the dielectric enclosure. Yet another advantage is the reduced footprint of the plasma chamber afforded by the placement of the antenna assembly within the plasma chamber. Another advantage is the ability to easily position and adjust the configuration of ferromagnetic components within the dielectric enclosure for further plasma density adjustment.

[0048] While several embodiments of the present disclosure have been described herein, the disclosure is not limited to those embodiments, as the art will permit, and the specification may be read in a similar manner. Therefore, the above description should not be construed as limiting. Those skilled in the art will envision other modifications within the scope and spirit of the claims appended hereto.

Claims

1. a plasma chamber for containing the plasma; an extraction assembly disposed along a side of the plasma chamber, the extraction assembly including at least one extraction aperture extending along a first direction; an antenna assembly extending through the plasma chamber along the first direction, the antenna assembly comprising: a dielectric enclosure; a plurality of conductive antennas extending along the first direction within the dielectric enclosure; an antenna assembly comprising: Equipped with the plurality of conductive antennas are movable relative to one another within the dielectric enclosure at least along a second direction perpendicular to the first direction. Ion source.

2. The ion source of claim 1 , wherein the at least one extraction aperture comprises a plurality of extraction apertures elongated along the first direction.

3. 10. The ion source of claim 1, wherein the extraction assembly comprises an extraction plate disposed in a first plane, and the plurality of conductive antennas have an arcuate shape in a second plane parallel to the first plane.

4. The ion source of claim 3 , wherein the plurality of conductive antennas comprises pairs of antennas, the pairs of antennas being disposed closer to each other in a middle portion.

5. The ion source of claim 3 , wherein the plurality of conductive antennas comprises pairs of antennas, the pairs of antennas being disposed closer to each other at respective ends of the pair of antennas.

6. The ion source of claim 1 , further comprising a ferromagnetic insert assembly disposed within the dielectric enclosure.

7. The ion source of claim 6 , wherein the plurality of conductive antennas comprises a pair of antennas, and the ferromagnetic insert assembly extends between a first antenna of the pair of antennas and a second antenna of the pair of antennas.

8. 10. The ion source of claim 1, further comprising a movement mechanism coupled to move at least one of the plurality of conductive antennas relative to another of the plurality of conductive antennas within the dielectric enclosure.

9. a plasma chamber for containing the plasma; an extraction assembly disposed along a side of the plasma chamber, the extraction assembly including at least one extraction aperture extending along a first direction; an antenna assembly extending through the plasma chamber along the first direction, the antenna assembly comprising: a dielectric enclosure; a plurality of conductive antennas extending along the first direction within the dielectric enclosure; an antenna assembly comprising: a process chamber adjacent to the extraction assembly, the process chamber including a substrate stage scannable along a scan direction perpendicular to the first direction; a power generator connected to the antenna assembly; Equipped with the plurality of conductive antennas are movable relative to one another within the dielectric enclosure at least along a second direction perpendicular to the first direction. Processing system.

10. 10. The treatment system of claim 9, wherein said at least one extraction aperture comprises a plurality of extraction apertures elongated along said first direction.

11. 10. The treatment system of claim 9, wherein the extraction assembly comprises an extraction plate disposed in a first plane, and the plurality of conductive antennas have an arcuate shape in a second plane parallel to the first plane.

12. The processing system of claim 11 , wherein the plurality of conductive antennas comprises pairs of antennas, the pairs of antennas being disposed closer to each other in a middle portion.

13. The processing system of claim 11 , wherein the plurality of conductive antennas comprises pairs of antennas, the pairs of antennas being disposed closer to each other at respective ends of the pair of antennas.

14. The processing system of claim 9 , further comprising a ferromagnetic insert assembly disposed within the dielectric enclosure.

15. 15. The processing system of claim 14, wherein the plurality of conductive antennas comprises a pair of antennas, and the ferromagnetic insert assembly extends between a first antenna of the pair of antennas and a second antenna of the pair of antennas.

16. 10. The processing system of claim 9, further comprising a movement mechanism coupled to move at least one antenna of the plurality of conductive antennas relative to another antenna of the plurality of conductive antennas within the dielectric enclosure.

17. 1. An antenna assembly for an inductively coupled ion source, comprising: a dielectric enclosure extending along a first direction from a first end to a second end; a first conductive antenna extending through the dielectric enclosure from the first end to the second end; a second conductive antenna extending through the dielectric enclosure from the first end to the second end; and Equipped with the first conductive antenna and the second conductive antenna are movable relative to each other within the dielectric enclosure along at least a second direction perpendicular to the first direction; Antenna assembly.

18. The antenna assembly of claim 17 , further comprising a ferromagnetic insert assembly disposed within the dielectric enclosure.

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