Ion implantation systems and related methods

Abstract

Ion implantation systems and related methods are provided herein. The ion implantation system comprises a gas supply assembly having at least one gas supply container in fluid communication with an arc chamber. The gas supply assembly is configured to supply a gas component comprising at least one of GeF4, GeH4, H2, a fluorine-containing gas, or any combination thereof. When the gas component is supplied from at least one gas supply container to the arc chamber for implantation into a substrate, the beam current of Ge ions produced from the component is greater than the beam current of Ge ions produced from a control gas component.

Description

[Technical Field]

[0001] This disclosure relates to the field of ion implantation systems and methods. [Background technology]

[0002] Ion implantation involves implanting chemical species into a substrate, such as a microelectronic device wafer, by the collision of energy ions of the chemical species with the substrate. To generate the ion-implantable species, a dopant gas is ionized to produce an ion beam. [Overview of the project]

[0003] Some embodiments relate to ion implantation systems. In some embodiments, the ion implantation system includes a gas supply assembly. In some embodiments, the gas supply assembly comprises at least one gas supply vessel that is in fluid communication with the arc chamber. In some embodiments, the gas supply assembly is configured to supply a gas component comprising at least one of GeF4, GeH4, H2, a fluorine-containing gas, or any combination thereof. In some embodiments, when the gas component is supplied from at least one gas supply vessel to the arc chamber for implantation into the substrate, the beam current of Ge ions generated from the gas component is greater than the beam current of Ge ions generated from a control gas component.

[0004] Several embodiments relate to methods for ion implantation. In some embodiments, the method includes flowing a gas component into an arc chamber. In some embodiments, the gas component includes at least one of GeF4, GeH4, H2, a fluorine-containing gas, or any combination thereof. In some embodiments, the method includes generating Ge ions from the gas component for implantation into a substrate. In some embodiments, the beam current of the Ge ions generated from the gas component is greater than the beam current of the Ge ions generated from a control gas component.

[0005] Some embodiments of the present disclosure are described herein by way of example only, with reference to the accompanying drawings. Referring specifically to the drawings in detail, it is emphasized that the embodiments shown are by way of example and for illustrative discussion of embodiments of the present disclosure. In this regard, the description using the drawings will clarify to those skilled in the art how embodiments of the present disclosure can be implemented.

Brief Description of the Drawings

[0006] [Figure 1] A schematic diagram of an ion implantation system according to some embodiments is shown. [Figure 2] A flowchart of a method for ion implantation according to some embodiments. [Figure 3A] A graph showing the change in beam current at different gas flow rates of GeF4 according to some embodiments. [Figure 3B] A graph showing the beam spectrum of GeF4 according to some embodiments. [Figure 3C] A graph showing the beam spectra of W+ and WFx+ in FIG. 3B according to some embodiments. [Figure 4A] A graph showing the change in beam current at different gas flow rates of a mixture of GeH4 gas and GeF4 gas according to some embodiments. [Figure 4B] A graph showing the beam spectrum of a mixture of GeH4 gas and GeF4 gas according to some embodiments. [Figure 4C] A graph showing the beam spectra of W+ and WFx+ in FIG. 4B according to some embodiments. [Figure 4D] A graph showing the beam spectrum of a mixture of GeH4 gas and GeF4 gas according to some embodiments. [Figure 4E] A graph showing the beam spectra of W+ and WFx+ in FIG. 4D according to some embodiments.

Modes for Carrying Out the Invention

[0007] Among these disclosed benefits and improvements, other objects and advantages of the present disclosure will become apparent from the following description in conjunction with the accompanying drawings. Detailed embodiments of the present disclosure are disclosed herein. However, it should be understood that the disclosed embodiments are merely illustrative of the present disclosure and can be embodied in various forms. In addition, each of the examples given with respect to the various embodiments of the present disclosure is intended to be illustrative and not limiting.

[0008] The prior patents and publications referred to herein are incorporated by reference in their entirety.

[0009] Throughout this specification and the claims, the following terms take the meanings explicitly associated with them herein, unless the context clearly indicates otherwise. As used herein, the phrases "in one embodiment," "in an embodiment," and "in some embodiments" do not necessarily refer to the same embodiment(s), but may. Further, the phrases "in another embodiment" and "in some other embodiments" as used herein do not necessarily refer to different embodiments, but may. It is intended that all embodiments of the present disclosure be combinable without departing from the scope or spirit of the present disclosure.

[0010] As used herein, the term "based on" is not exclusive and allows for being based on additional factors not recited, unless the context clearly indicates otherwise. Further, throughout this specification, the meanings of "a," "an," and "the" include plural references. The meaning of "in" includes "in" and "on."

[0011] Some embodiments relate to ion implantation systems and related methods. As disclosed herein, at least one advantage of the present disclosure is that the ion implantation systems (and related methods) disclosed herein exhibit unexpectedly enhanced beam currents. At least one additional advantage of the present disclosure is that the ion implantation systems (and related methods) disclosed herein exhibit an unexpectedly longer source life. For example, as disclosed herein, in some embodiments, when an ion implantation system (and related method) uses at least one of a gas component, a target material containing Ge, or any combination thereof, the ion implantation system exhibits enhanced ion beam current and / or source life.

[0012] As used herein, "isotopically enriched" may refer to germanium isotopes. For example, germanium has 70 Ge, 72 Ge, 73 Ge, 74 Ge, and 76 five naturally occurring isotopes of Ge. 74 Ge is the most common germanium isotope with a natural abundance of 36.28%. Subsequently, 72 Ge with a natural abundance of 27.54%, 70 Ge with a natural abundance of 20.84%, 73 Ge with a natural abundance of 7.73%, and 76 Ge with a natural abundance of 7.61% follow. For example, in some embodiments, the term refers to a material in which germanium isotopes are present above natural abundance levels. As another example, an isotopically enriched GeF4 gas may contain germanium isotopically enriched with at least 72 Ge isotopes enriched to an amount greater than 50% of the total amount of germanium isotopes, for example. As another example, an isotopically enriched GeH4 gas may contain germanium isotopically enriched with at least 72Ge can contain isotopically enriched germanium with Ge isotopes. As another example, isotopically enriched Ge may be enriched to an amount exceeding 50% of the total amount of germanium isotopes, for example, at least 72 Ge may contain isotopically enriched germanium. In some embodiments, isotopically enriched germanium isotopes contain germanium that isotopically enriched beyond the natural abundance level, up to 100% above the natural abundance level. In some embodiments, isotopically enriched germanium isotopes contain germanium that isotopically enriched beyond the natural abundance level, up to 100% above the natural abundance level. In some embodiments, isotopically enriched Ge may contain isotopically enriched solid germanium. In some embodiments, isotopically enriched solid germanium, 70 Enjoy, 72 Enjoy, 73 Enjoy, 74 Enjoy, 76 The material contains germanium enriched with at least one isotope in Ge or any combination thereof.

[0013] As used herein, GeF4 may be used as a “dopant gas” referring to a gas-phase material containing germanium dopant species, i.e., species implanted onto a substrate in an ion implantation system. The fluorine in GeF4 may be referred to as the non-dopant component of the GeF4 dopant gas. In some embodiments, the dopant gas consists of GeF4 or is essentially composed of GeF4 (i.e., any one or more other dopant gas species different from GeF4 are present in less than 10% volume when measured relative to the amount of GeF4). In some embodiments, GeF4 may be used with one or more other different dopant gas species, such as Germanine, boron trifluoride, diborane, silicon tetrafluoride, silane, phosphine, and arsine. When one or more different dopant gas species are used, GeF4 may be the primary gas species used in the system (i.e., used in greater quantities than any other dopant gas species).

[0014] As used herein, GeH4 may be used as a “dopant gas” referring to a gas-phase material containing germanium dopant species, i.e., species implanted onto a substrate in an ion implantation system. The hydrogen in GeH4 may be referred to as the non-dopant component of the GeH4 dopant gas. In some embodiments, the dopant gas consists of GeH4 or essentially consists of GeH4 (i.e., any one or more other dopant gas species different from GeH4 are present in less than 20% volume when measured relative to the amount of GeH4). In some embodiments, GeH4 may be used together with one or more other different dopant gas species, such as germanium tetrafluoride, boron trifluoride, diborane, silicon tetrafluoride, silane, phosphine, and arsine. When one or more different dopant gas species are used, GeH4 may be the primary gas species used in the system (i.e., used in greater quantities than any other dopant gas species).

[0015] In some embodiments, the GeF4 gas used may be based on a natural isotopic composition of Ge, or the isotopes may be enriched within Ge isotopes (e.g., beyond natural abundance levels). In some embodiments, one or more gas supply vessels may contain a natural isotopic distribution of Ge in GeF4 as a dopant gas, or the GeF4 may be enriched with isotopes in at least one Ge isotope beyond natural abundance levels.

[0016] In some embodiments, the GeH4 gas used may be based on a natural isotopic composition of Ge, or the isotopes may be enriched in Ge isotopes (e.g., beyond natural abundance levels). In some embodiments, one or more gas supply vessels may contain a natural isotopic distribution of Ge in GeH4 as a dopant gas, or the GeH4 may be enriched in at least one Ge isotope beyond natural abundance levels.

[0017] In some embodiments, the dopant gas source includes, but is not limited to, one or more ionizable germanium-containing gases including, GeF4, Ge2F6, GeH4, Ge2H6, GeHF3, GeH2F2, and GeH3F, as well as any other germanium fluoride gas(s).

[0018] As used herein, H2 may be used as a “non-dopant gas,” but may be effective when used with GeF4 gas or GeH4 gas to block the tungsten-fluorine reaction and reduce the formation of tungsten fluoride. The use of H2 in this embodiment is in conjunction with Ge during ion implantation. + Beam current gain and W + Other benefits may be offered, such as improved peak reduction. In some embodiments, the non-dopant gas consists of H2 or is essentially H2 (i.e., any one or more other non-dopant gas species different from H2 are present in less than 1% volume when measured relative to the amount of H2). In some embodiments, H2 may be used together with one or more other different non-dopant gas species, such as helium, nitrogen, neon, argon, xenon, and krypton. Such other non-dopant gas species may be described as “diluent gas,” “auxiliary gas,” or “co-species gas.” When one or more different non-dopant gas species are used, H2 may be the primary gas species used in the system (i.e., used in greater quantities than any other non-dopant gas species).

[0019] In some embodiments, using at least one of the target materials containing GeF4, GeH4, Ge, or any combination thereof as a dopant gas has been shown to enhance the beam current and / or improve the source lifetime. In some embodiments, using at least one of the target materials containing GeF4, GeH4, Ge, or any combination thereof as a dopant gas has been shown to reduce tungsten, as tungsten can contribute to the accumulation of deposits on the cathode surface, thus improving the beam source lifetime. Deposits on the cathode surface adversely affect the thermionic emission of ions, resulting in a decrease in arc current, reduced performance and shortened lifetime of the ion source, harmful etching reactions from such dopant gas as a result of the generation of free fluorine in the arc chamber, and stripping or sputtering or deposition of tungsten material on the cathode, resulting in a loss of physical integrity of the cathode and consequently reduced performance and lifetime of the ion source.

[0020] Figure 1 shows schematic diagrams of ion implantation systems according to several embodiments.

[0021] As shown in Figure 1, the ion implantation system 100 includes an arc chamber 150 fluidly coupled to at least one gas supply container 102. In some embodiments, the at least one gas supply container 102 is included in a gas supply assembly configured to supply gas components. As shown, the ion implantation system 100 also includes an ion implant chamber 101.

[0022] In some embodiments, when a gas component is supplied to the arc chamber 150 from at least one gas supply container 102 in the presence of a target material optionally containing Ge for injection into a substrate, the beam current of Ge ions generated from the gas component is greater than the beam current of Ge ions generated from a control gas component. The control gas component may differ from the gas component in, among other things, content (e.g., different volume percentages of gas / vapor species) and / or chemical species. In some embodiments, when a gas component is supplied to the arc chamber 150 from at least one gas supply container 102, the beam current of Ge ions generated from the gas component in the presence of a target material containing Ge is greater than the beam current of Ge ions generated from the gas component in the absence of a target material containing Ge.

[0023] In some embodiments, the gas supply assembly and / or at least one gas supply container is configured to supply a gas component comprising at least one of GeF4, GeH4, H2, a fluorine-containing gas, or any combination thereof. In some embodiments, at least one gas supply container 102 is a single container comprising at least one of GeF4, GeH4, H2, a fluorine-containing gas, or any combination thereof. In some embodiments, at least one gas supply container 102 comprises two or more containers. In some embodiments, at least one gas supply container 102 comprises at least one of a first container, a second container, a third container, a fourth container, or any combination thereof. In some embodiments, the first container comprises GeF4. In some embodiments, the second container comprises GeH4. In some embodiments, the third container comprises H2. In some embodiments, the fourth container comprises a fluorine-containing gas. In some embodiments, the gas component comprises isotope-enriched GeF4, and GeF4 is 72The isotope is enriched in Ge (or any of the other Ge isotopes disclosed herein). It will be understood that any one of the at least one gas supply container 102 disclosed herein may further contain other gases and / or materials, such as, for example, at least one of an ionizable gas, a diluent gas, a carrier gas, a co-gas, the like, or any combination thereof.

[0024] In some embodiments, the gas supply container 102 comprises a single container containing a mixture of dopant gases such as GeF4 and GeH4. In some embodiments, GeF4 is isotope enriched. In some embodiments, GeH4 is isotope enriched. In some embodiments, the gas supply container 102 comprises two containers such that each container individually contains a single dopant gas. For example, one container may contain GeF4 and the other container may contain GeH4. In some embodiments, the gas supply container 102 comprises a plurality of containers such that each container contains a single dopant gas. In some embodiments, individual containers of one or more containers contain two or more dopant gases such that the container contains a mixture of dopant gases. In some embodiments, the gas supply container 102 is configured to deliver the dopant gas at or below atmospheric pressure via one or more pressure regulators. In some embodiments, the dopant gas is delivered at or below atmospheric pressure by the use of an adsorbent.

[0025] In some embodiments, the ion implantation system 100 is configured to supply GeF4 at a volume percentage of 20% to 95% based on the total volume of the gas mixture, or any range or subrange of the gas from 20% to 95%. For example, in some embodiments, the volume percentage of GeF4 based on the total volume of the gas mixture may be 20% to 90%, 30% to 90%, 40% to 90%, 50% to 90%, 60% to 80%, 70% to 90%, or 80% to 90%. In some embodiments, the volume percentage of GeF4 based on the total volume of the gas mixture may be 30% to 50%, or any subrange of 30% to 50%. In some embodiments, the volume percentage of GeF4 based on the total volume of the gas mixture may be 31%-50%, 32%-50%, 33%-50%, 34%-50%, 35%-50%, 36%-50%, 37%-50%, 38%-50%, 39%-50%, 40%-50%, 41%-50%, 42%-50%, 43%-50%, 44%-50%, 45%-50%, 46%-50%, 47%-50%, 48%-50%, or 49%-50%. In some embodiments, the volume percentage of GeF4 based on the total volume of the gas mixture may be 30%-49%, 30%-48%, 30%-47%, 30%-46%, 30%-45%, 30%-44%, 30%-43%, 30%-42%, 30%-41%, 30%-40%, 30%-39%, 30%-38%, 30%-37%, 30%-36%, 30%-35%, 30%-34%, 30%-33%, 30%-32%, or 30%-31%.

[0026] In some embodiments, the gas supply container 102 contains GeH4 in a volume percentage of 5% to 80% based on the total volume of the gas mixture, or any range or partial range of 5% to 80%. For example, in some embodiments, the volume percentage of GeH4 based on the total volume of the gas mixture may be 10% to 80%, 20% to 80%, 30% to 80%, 40% to 80%, 50% to 80%, 60% to 80%, or 70% to 80%. In some embodiments, the volume percentage of GeH4 based on the total volume of the gas mixture may be 10% to 50%, 15% to 50%, 20% to 50%, 25% to 50%, 30% to 50%, 35% to 50%, 40% to 50%, or 45% to 50%. In some embodiments, the volume percentage of GeH4 based on the total volume of the gas mixture is 11%~80%, 12%~80%, 13%~80%, 14%~80%, 15%~80%, 16%~80%, 17%~80%, 18%~80%, 19%~80%, 20%~80%, 21%~80%, 22%~80%, 23%~80%, 24%~80%, 2 5%~80%, 26%~80%, 27%~80%, 28%~80%, 29%~80%, 30%~80%, 31%~80%, 32%~80%, 33%~80%, 34%~80%, 35%~80%, 36%~80%, 37%~80%, 38%~80%, 39%~80%, 40%~80%, 41%~80%, 42%~80%, 43%~80% 44%~80%, 45%~80%, 46%~80%, 47%~80%, 48%~80%, 49%~80%, 50%~80%, 51%~80%, 52%~80%, 53%~80%, 54%~80%, 55%~80%, 56%~80%, 57%~80%, 58%~80%, 59%~80%, 60%~80%, 61%~80%, 62%~8 It may also be 0%, 63%~80%, 64%~80%, 65%~80%, 66%~80%, 67%~80%, 68%~80%, 69%~80%, 70%~80%, 71%~80%, 72%~80%, 73%~80%, 74%~80%, or 75%~80%, 76%~80%, 77%~80%, 78%~80%, or 79%~80%.In some embodiments, the volume percentage of GeH4 based on the total volume of the gas mixture is 10%~89%, 10%~88%, 10%~87%, 10%~86%, 10%~85%, 10%~84%, 10%~83%, 10%~82%, 10%~81%, 10%~80%, 10%~79%, 10%~78%, 10%~77%, 10%~76%, 10%~75%, 10%~74%, 10%~ 73%, 10%~72%, 10%~71%, 10%~70%, 10%~69%, 10%~68%, 10%~67%, 10%~66%, 10%~65%, 10%~64%, 10%~63%, 10%~62%, 10%~61%, 10%~60%, 10%~59%, 10%~58%, 10%~57%, 10%~56%, 10%~55%, 10%~54%, 10%~53%, 10%~52% %, 10%~51%, 10%~50%, 10%~49%, 10%~48%, 10%~47%, 10%~46%, 10%~45%, 10%~44%, 10%~43%, 10%~42%, 10%~41%, 10%~40%, 10%~39%, 10%~38%, 10%~37%, 10%~36%, 10%~35%, 10%~34%, 10%~33%, 10%~32%, 10%~31% , 10%~30%, 10%~29%, 10%~28%, 10%~27%, 10%~26%, 10%~25%, 10%~24%, 10%~23%, 10%~22%, 10%~21%, 10%~20%, 10%~19%, 10%~18%, 10%~17%, 10%~16%, 10%~15%, 10%~14%, 10%~13%, 10%~12%, or 10%~11% may also be used.

[0027] In some embodiments, the gas supply container 102 contains H2. In some embodiments, the gas supply container 102 is a device configured to produce hydrogen via an electrochemical cell.

[0028] In some embodiments, the gas supply container 102 contains fluoride gas. The fluoride gas is BF3, NF3, PF3, PF5, GeF4, XeF2, CF4, B2F4, SiF4, Si2F6, AsF3, AsF5, XeF4, XeF6, WF6, MoF6, C n F 2n+2 , C n F2n , C n F 2n-2 , C n H x F 2n+2-x , C n H x F 2n-x , C n H x F 2n-2-x may include at least one of COF2, SF6, SF4, SeF6, N2F4, HF, F2, or any combination thereof. In some embodiments, n is 1 or more (e.g., 1 to 10). In some embodiments, x is 1 or more (e.g., 1 to 10). In some embodiments, n and x are different. In some embodiments, n and x are the same.

[0029] In some embodiments, the arc chamber 150 contains a target material containing Ge. The target material containing Ge may include at least one of pure germanium, germanium isotopes, silicon germanium (e.g., Si 1-x Ge x where 0 < x < 1), or any combination thereof. In some embodiments, the target material containing Ge is enriched in germanium isotopes.

[0030] In some embodiments, the arc chamber 150 includes an arc chamber wall having an inner plasma-facing surface. One or more arc chamber liners configured to contact all or part of the inner plasma-facing surface of the wall of the arc chamber 150 may be present. In some embodiments, the arc chamber 150 contains a liner containing Ge.

[0031] In some embodiments, the arc chamber 150 contains a target material containing Ge. In some embodiments, the target material containing Ge is enriched in germanium isotopes. In some embodiments, the arc chamber 150 contains a vessel containing Ge. The vessel itself may contain Ge. For example, in some embodiments, the vessel is constructed of Ge. In some embodiments, the vessel itself does not contain Ge, but is configured to hold or contain a target material containing Ge. The vessel may be configured to withstand the high temperatures within the arc chamber 150, so that it does not melt and maintains its shape well during the ion implantation process. In some embodiments, the vessel may be mounted or positioned on the anticathode (or coal repeller), the wall of the arc chamber 150, or the surface of the arc chamber liner. For example, in some embodiments, the Ge-containing vessel is positioned on at least one of the surface of the anticathode, the surface of the arc chamber wall, the surface of the arc chamber liner, or any combination thereof. In some embodiments, the arc chamber 150 comprises a vessel containing at least one of solid Ge, liquid Ge, or any combination thereof. In some embodiments, the arc chamber 150 is at least partially formed of a target material containing Ge. In some embodiments, the arc chamber 150 comprises a vessel of the target material containing Ge. In some embodiments, the arc chamber 150 comprises a liner at least partially formed of the target material containing Ge. Any of the target materials containing Ge may be isotopically enriched in germanium isotopes beyond natural abundance levels. In some embodiments, for example, but not limited to, the target material containing Ge contains isotopically enriched germanium, and the isotopically enriched germanium is 72 The isotope is enriched in Ge (or any of the other isotopes disclosed herein).

[0032] As shown in Figure 1, the gas supply container 102 may have an internal volume for holding at least one of GeF4, GeH4, or any combination thereof, which is supplied for ion implantation of the substrate 128 in the illustrated ion implant chamber 101.

[0033] The storage and gas supply container 102 may be of a type that includes an adsorbent medium on which a dopant gas is physically adsorbed for storage of the gas, and the gas is desorbed from the adsorbent medium under dispensing conditions for discharge from the gas supply container 102. The adsorbent medium may be a solid-phase carbon adsorbent material. In some embodiments, the adsorbent medium includes at least one of porous organic polymers (POPs), zeolites, zeolite imidazolate frameworks (ZIFs), silicates, metal-organic frameworks (MOFs), or any combination thereof. Further non-limiting examples of adsorbent materials are described in U.S. Patent Application Publication 2023 / 0079446, entitled "Composite Adsorbent-Containing Bodies and Related Methods," which is incorporated herein by reference in its entirety. Such types of adsorbent-based containers are commercially available from Entegris, Inc. (Danbury, Connecticut, USA) under the trademarks SDS and SAGE. Alternatively, the container may be an internally pressure-regulating type, containing one or more pressure regulators within the internal volume of the container. Such pressure-regulating containers are commercially available under the trademark VAC from Entegris Inc. (Danbury, Connecticut, USA). As yet another alternative, the container may contain a dopant source material in a vaporizing solid form that volatilizes, for example, upon heating of the container and / or its contents, producing a dopant gas as a vaporization or sublimation product.

[0034] The storage and gas supply container 102 may include a cylindrical container wall 104 surrounding an internal volume that holds a mixture of GeF4 gas and GeH4 gas in an adsorbed state, a free gas state, a liquefied gas state, or a mixture thereof.

[0035] The gas supply container 102 may include a valve head 108 connected to it via a dispensing line 117 in gas flow communication. A pressure sensor 110 may be located in line 117 together with a mass flow controller 114, and other optional monitoring and sensing components may be connected to the line and interfaced with control means such as actuators, feedback and computer control systems, and cycle timers.

[0036] The ion implant chamber 101 may contain an ion source 116 that receives a dispensed mixture of GeF4 and GeH4 gases from line 117, generating an ion beam 105. The ion beam 105 may pass through a mass spectrometry unit 122 that selects the desired ions and rejects unselected ions.

[0037] The selected ions may pass through the accelerating electrode array 124 and then the deflection electrode 126. The resulting focused ion beam may collide with a substrate element 128 located in a rotatable holder 130 attached to a spindle 132. The ion beam of dopant ions may be used to dope the substrate as desired to form a doped structure.

[0038] Each section of the ion implant chamber 101 may be discharged through lines 118, 140, and 144 by pumps 120, 142, and 146, respectively.

[0039] Figure 2 is a flowchart of Method 200 for ion implantation according to several embodiments.

[0040] As shown in Figure 2, method 200 may include one or more of the steps of flowing a gas component into an arc chamber 202 and generating Ge ions for injection into the substrate 204.

[0041] In some embodiments, the arc chamber in step 202 may be the arc chamber 150 described herein. The gas component may include the gas and / or vapor of the gas supply container 102 described herein.

[0042] In some embodiments, step 202 further includes flowing a gas component into the arc chamber. In some embodiments, the flow is performed at a predetermined flow rate. In some embodiments, the gas component is an ionizable gas mixture.

[0043] In some embodiments, the flow in step 202 includes flowing the ionizable gas mixture at a flow rate of 0.1 sccm to 5 sccm. In some embodiments, the flow of the ionizable gas mixture may be at a flow rate of 0.5 sccm to 5 sccm, 1 sccm to 5 sccm, 1.5 sccm to 5 sccm, 2 sccm to 5 sccm, 2.5 sccm to 5 sccm, 3 sccm to 5 sccm, 3.5 sccm to 5 sccm, 4 sccm to 5 sccm, or 4.5 sccm to 5 sccm. In some embodiments, the flow of the ionizable gas mixture is 0.1 sccm to 5 sccm, 0.2 sccm to 5 sccm, 0.3 sccm to 5 sccm, 0.4 sccm to 5 sccm, 0.5 sccm to 5 sccm, 0.6 sccm to 5 sccm, 0.7 sccm to 5 sccm, 0.8 sccm to 5 sccm, 0.9 sccm to 5 sccm, 1 sccm to 5 sccm, and 1.1 sccm to 5 sccc. m, 1.2sccm~5sccm, 1.3sccm~5sccm, 1.4sccm~5sccm, 1.5sccm~5sccm, 1.6sccm~5sccm, 1.7sccm~5sccm, 1.8s ccm~5sccm, 1.9sccm~5sccm, 2sccm~5sccm, 2.1sccm~5sccm, 2.2sccm~5sccm, 2.3sccm~5sccm, 2.4sccm~5scc m, 2.5sccm~5sccm, 2.6sccm~5sccm, 2.7sccm~5sccm, 2.8sccm~5sccm, 2.9sccm~5sccm, 3sccm~5sccm, 3.1scc m~5sccm, 3.2sccm~5sccm, 3.3sccm~5sccm, 3.4sccm~5sccm, 3.5sccm~5sccm, 3.6sccm~5sccm, 3.7sccm~5scc The flow rates may be m, 3.8 sccm to 5 sccm, 3.9 sccm to 5 sccm, 4 sccm to 5 sccm, 4.1 sccm to 5 sccm, 4.2 sccm to 5 sccm, 4.3 sccm to 5 sccm, 4.4 sccm to 5 sccm, 4.5 sccm to 5 sccm, 4.6 sccm to 5 sccm, 4.7 sccm to 5 sccm, 4.8 sccm to 5 sccm, or 4.9 sccm to 5 sccm.In some embodiments, flowing GeF4 is performed in lengths of 0.1 sccm to 5 sccm, 0.1 sccm to 4.9 sccm, 0.1 sccm to 4.8 sccm, 0.1 sccm to 4.7 sccm, 0.1 sccm to 4.6 sccm, 0.1 sccm to 4.5 sccm, 0.1 sccm to 4.4 sccm, 0.1 sccm to 4.3 sccm, 0.1 sccm to 4.2 sccm, 0.1 sccm to 4.1 sccm, 0.1 sccm to 4 sccm, and 0.1 sccm. ~3.9sccm, 0.1sccm~3.8sccm, 0.1sccm~3.7sccm, 0.1sccm~3.6sccm, 0.1sccm~3.5sccm, 0.1sccm~3.4sccm, 0.1sccm~3.3s ccm, 0.1sccm~3.2sccm, 0.1sccm~3.1sccm, 0.1sccm~3sccm, 0.1sccm~2.9sccm, 0.1sccm~2.8sccm, 0.1sccm~2.7sccm, 0.1 sccm~2.6sccm, 0.1sccm~2.5sccm, 0.1sccm~2.4sccm, 0.1sccm~2.3sccm, 0.1sccm~2.2sccm, 0.1sccm~2.1sccm, 0.1sccm~ 2sccm, 0.1sccm~1.9sccm, 0.1sccm~1.8sccm, 0.1sccm~1.7sccm, 0.1sccm~1.6sccm, 0.1sccm~1.5sccm, 0.1sccm~1.4sccm The flow rates may be 0.1 sccm to 1.3 sccm, 0.1 sccm to 1.2 sccm, 0.1 sccm to 1.1 sccm, 0.1 sccm to 1 sccm, 0.1 sccm to 0.9 sccm, 0.1 sccm to 0.8 sccm, 0.1 sccm to 0.7 sccm, 0.1 sccm to 0.6 sccm, 0.1 sccm to 0.5 sccm, 0.1 sccm to 0.4 sccm, 0.1 sccm to 0.3 sccm, or 0.1 sccm to 0.2 sccm.

[0044] In some embodiments, the generation in step 204 includes generating Ge ions for implantation into the substrate.

[0045] In some embodiments, the substrate of step 204 may contain, consist of, or essentially consist of at least one of Si, Co, Cu, Al, W, WN, WC, TiN, Mo, MoC, SiO2, W, SiN, WCN, Al2O3, AlN, ZrO2, La2O3, TaN, RuO2, IrO2, Nb2O3, Y2O3, hafnium oxide, or any combination thereof. In some embodiments, the substrate may include a silicon-containing film. In some embodiments, the silicon-containing film may contain, consist of, or essentially consist of at least one of silicon, silicon nitride, silicon oxynitride, silicon oxide, silicon dioxide, silicon carbide, silicon carbonitride, carbon-doped silicon nitride, carbon-doped silicon oxide, carbon-doped silicon oxynitride, or any combination thereof. In some embodiments, the substrate may include other silicon-based substrates, such as one or more of a polysilicon substrate, a metal substrate, and a dielectric substrate.

[0046] Some embodiments relate to ion implantation systems. In some embodiments, the ion implantation system may comprise an arc chamber 150 as described herein. In some embodiments, the ion implantation system may comprise a gas supply container 102 as described herein. In some embodiments, the gas supply container 102 contains Ge gas. In some embodiments, the Ge gas comprises at least one of GeF4, GeH4, or any combination thereof. In some embodiments, the arc chamber contains a target material containing Ge. In some embodiments, the target material containing Ge is a target material as described herein. In some embodiments, when Ge gas is supplied for implantation into a substrate in the presence of the target material, the beam current of the Ge gas is at least 10% greater than the beam current of the Ge gas in the absence of the target material. In some embodiments, Ge ions are generated without applying a bias voltage.

[0047] It will be understood that any one or more embodiments disclosed herein may be used individually or in combination without departing from the scope of this disclosure. [Examples]

[0048] GeF4 was flowed at various flow rates through an arc chamber containing a Ge-containing target material. The performance of GeF4 with the Ge target material was compared with a control composition of GeF4 flowed through an arc chamber without the target material. As shown in Figure 3A, the beam current in mA was measured at different flow rates of GeF4. As shown in Figure 3A, the arc power was 90V and the source beam was 20mA. As shown, GeF4 with the Ge target material showed a significantly improved beam current compared to the control composition.

[0049] Figure 3B is a graph showing the beam spectra of GeF4 with Ge target material and a control composition. As shown in Figure 3B, GeF4 with Ge target material showed significantly improved beam current compared to the control composition. Furthermore, as shown in Figure 3C, GeF4 with Ge target material showed significantly reduced W + and WFx + It showed a peak. [Examples]

[0050] A mixture of GeF4 and GeH4 was flowed at a fixed flow rate of 1 sccm through an arc reaction chamber containing a Ge-containing target material. The performance of the GeF4 / GeH4 with the Ge target material was compared to a control composition of GeF4 / GeH4 flowed through an arc reaction chamber without the target material. As shown in Figure 4A, the beam current in mA was measured at different volume percentages of GeH4 relative to the total volume of GeF4 and GeH4. The arc power was 90 V and the source beam was 20 mA. As shown, the GeF4 / GeH4 with the Ge target material showed significantly improved beam current compared to the control composition at all tested volume percentages of GeH4 relative to the total volume of GeF4 and GeH4.

[0051] Figure 4B is a graph showing the beam spectra of GeF4 / GeH4 compared to GeF4, where neither beam flowed into an arc chamber containing Ge target material. As shown in Figure 4B, the beam spectrum of GeF4 was compared to the beam spectrum of GeF4 with a volume of GeH4 that was 33% of the total volume of GeF4 and GeH4. As shown, GeF4 / GeH4 showed a significantly improved beam current and a significantly reduced wattage compared to the control composition, as shown in Figure 4C. + and WFx + It showed a peak.

[0052] Figure 4D is a graph showing the beam spectra of GeF4 / GeH4 compared to GeF4, with both beams flowing into an arc chamber containing Ge target material. As shown in Figure 4D, the beam spectrum of GeF4 was compared to the beam spectrum of GeF4 with a volume of GeH4 that was 33% of the total volume of GeF4 and GeH4. As shown, GeF4 / GeH4 showed significantly improved beam current and significantly reduced W compared to the control composition, as shown in Figure 4E. + and WFx + It showed a peak.

[0053] manner Various embodiments are described below. It should be understood that one or more of the features listed in the embodiments below can be combined with one or more other embodiments. Embodiment 1: An ion implantation system, The gas supply assembly comprises at least one gas supply vessel that is in fluid communication with the arc chamber, The gas supply assembly is configured to supply a gas component containing at least one of GeF4, GeH4, H2, a fluorine-containing gas, or any combination thereof. An ion implantation system in which, when a gas component is supplied to the arc chamber from at least one gas supply container for implantation into a substrate, the beam current of Ge ions produced from the gas component is greater than the beam current of Ge ions produced from a control gas component. Embodiment 2 The ion implantation system according to Embodiment 1, wherein at least one gas supply container comprises a first container containing GeF4 and a second container containing GeH4. Embodiment 3: An ion implantation system according to any one of Embodiments 1 to 2, wherein at least one gas supply container comprises a single container containing GeF4 and GeH4. Embodiment 4: An ion implantation system according to any one of Embodiments 1 to 3, wherein the arc chamber comprises a target material containing Ge. Embodiment 5 The ion implantation system according to Embodiment 4, wherein the target material containing Ge comprises at least one of pure germanium, germanium isotopes, silicon germanium, or any combination thereof. Embodiment 6: An ion implantation system according to any one of Embodiments 1 to 5, wherein the arc chamber is at least partially formed of a target material containing Ge. Embodiment 7: An ion implantation system according to any one of Embodiments 1 to 6, wherein the arc chamber comprises a container for a target material containing Ge. Embodiment 8: An ion implantation system according to any one of Embodiments 1 to 7, wherein the arc chamber comprises a liner at least partially formed of a target material containing Ge. Embodiment 9: An ion implantation system according to any one of Embodiments 1 to 8, wherein the gas components include GeF4, GeH4, and H2. Embodiment 10: An ion implantation system according to any one of Embodiments 1 to 9, wherein the gas component comprises GeH4 and a fluorine-containing gas. Embodiment 11: An ion implantation system according to any one of Embodiments 1 to 10, wherein the gas component comprises GeF4 and the arc chamber comprises a target material containing Ge. Embodiment 12: An ion implantation system according to any one of Embodiments 1 to 11, wherein the gas component comprises GeH4 and the arc chamber comprises a target material containing Ge. Embodiment 13 An ion implantation system according to any one of Embodiments 1 to 12, wherein the gas components include GeF4, GeH4, and H2, and the arc chamber includes a target material containing Ge. Embodiment 14 The gaseous component is Based on the total volume of the gaseous components, GeF4 is present in a volume percentage of 20% to 95%, Based on the total volume of the gaseous components, GeH4 is present at a volume percentage of 5% to 80%, Based on the total volume of the gaseous components, up to 70% of the volume is H2, An ion implantation system according to any one of embodiments 1 to 13, comprising a fluorine-containing gas at a volume percentage of up to 90% based on the total volume of the gas components. Embodiment 15: The ion implantation system according to any one of Embodiments 1 to 14, wherein GeF4 is isotope-enriched GeF4. Embodiment 16 A method of ion implantation, This involves flowing gaseous components into the arc chamber. The gas component includes at least one of GeF4, GeH4, H2, fluorine-containing gases, or any combination thereof, and the gas component is flowed. This involves generating Ge ions from gaseous components for injection into the substrate, A method comprising generating Ge ions such that the beam current of Ge ions generated from a gas component is greater than the beam current of Ge ions generated from a control gas component. Embodiment 17 The method according to Embodiment 16, wherein the flowing includes flowing an ionizable gas mixture at a flow rate of 0.1 to 5 sccm. Embodiment 18: The method according to any one of Embodiments 16 to 17, wherein Ge ions are generated without applying a bias voltage. Embodiment 19 The method according to any one of Embodiments 16 to 18, wherein at least one gas supply container comprises a first container containing GeF4 and a second container containing GeH4. Embodiment 20 The method according to any one of Embodiments 16 to 19, wherein at least one gas supply container comprises a single container containing GeF4 and GeH4. Embodiment 21 The method according to any one of Embodiments 16 to 20, wherein the arc chamber comprises a target material containing Ge. Embodiment 22 The method according to any one of Embodiments 16 to 21, wherein the target material containing Ge includes at least one of pure germanium, germanium isotopes, silicon germanium, or any combination thereof. Embodiment 23 The method according to any one of Embodiments 16 to 22, wherein the arc chamber is at least partially formed of a target material containing Ge. Embodiment 24 The method according to any one of Embodiments 16 to 23, wherein the arc chamber includes a container for a target material containing Ge. Embodiment 25 The method according to any one of Embodiments 16 to 24, wherein the arc chamber comprises a liner at least partially formed of a target material containing Ge. Embodiment 26 The method according to any one of Embodiments 16 to 25, wherein the gaseous components include GeF4, GeH4, and H2. Embodiment 27 The method according to any one of Embodiments 16 to 26, wherein the gas component comprises GeH4 and a fluorine-containing gas. Embodiment 28 The method according to any one of Embodiments 16 to 27, wherein the gas component comprises GeF4 and the arc chamber comprises a target material containing Ge. Embodiment 29 The method according to any one of Embodiments 16 to 28, wherein the gas component comprises GeH4 and the arc chamber comprises a target material containing Ge. Embodiment 30 The method according to any one of Embodiments 16 to 29, wherein the gas components include GeF4, GeH4, and H2, and the arc chamber includes a target material containing Ge. Embodiment 31 The gaseous component is Based on the total volume of the gaseous components, GeF4 is present in a volume percentage of 20% to 95%, Based on the total volume of the gaseous components, GeH4 is present at a volume percentage of 5% to 80%, Based on the total volume of the gaseous components, up to 70% of the volume is H2, The method according to any one of embodiments 16 to 30, comprising a fluorine-containing gas in a volume percentage of up to 90% based on the total volume of the gas components. Embodiment 32: The method according to any one of Embodiments 16 to 31, wherein GeF4 is isotope-enriched GeF4. Embodiment 33 An ion implantation system, The gas supply assembly comprises at least one gas supply vessel that is in fluid communication with the arc chamber, The arc chamber contains a target material including Ge, The gas supply assembly is configured to supply gas components including GeF4. An ion implantation system in which, when a gas component is supplied to an arc chamber from at least one gas supply container for implantation into a substrate, the beam current of Ge ions generated from the gas component in the presence of a target material is greater than the beam current of Ge ions generated from the gas component in the absence of a target material. Embodiment 34 The ion implantation system according to Embodiment 33, wherein the gas component further comprises H2. Embodiment 35: An ion implantation system according to any one of Embodiments 33 to 34, wherein the gas component further comprises GeH4. Embodiment 36: An ion implantation system according to any one of Embodiments 33 to 35, wherein at least one of GeF4, GeH4, or any combination thereof contains isotopically enriched germanium. Embodiment 37 An ion implantation system according to any one of Embodiments 33 to 36, wherein the target material comprises at least one of pure germanium, isotope-enriched germanium, silicon germanium, or any combination thereof. Embodiment 38 An ion implantation system, The gas supply assembly comprises at least one gas supply vessel that is in fluid communication with the arc chamber, The arc chamber contains a target material including Ge, The gas supply assembly is configured to supply gas components including GeH4. An ion implantation system in which, when a gas component is supplied to an arc chamber from at least one gas supply container for implantation into a substrate, the beam current of Ge ions generated from the gas component in the presence of a target material is greater than the beam current of Ge ions generated from the gas component in the absence of a target material. Embodiment 39 The ion implantation system according to Embodiment 38, wherein the gas component further comprises H2. Embodiment 40: An ion implantation system according to any one of Embodiments 38 to 39, wherein the gas component further comprises GeF4. Embodiment 41: The ion implantation system according to Embodiment 40, wherein at least one of GeF4, GeH4, or any combination thereof contains isotopically enriched germanium. Embodiment 42 An ion implantation system according to any one of Embodiments 38 to 41, wherein the target material comprises at least one of pure germanium, isotope-enriched germanium, silicon germanium, or any combination thereof. Embodiment 43 The method and / or ion implantation system comprises a target material containing concentrated GeF4, GeH4, and concentrated Ge, wherein each of GeF4, GeH4, and the target material 72 One of embodiments 1 to 42, which is concentrated in Ge. In particular, it should be understood that detailed modifications to the construction materials used, as well as the shape, size, and arrangement of components, may be made without departing from the scope of this disclosure. This specification and the embodiments described herein are examples, and the true scope and spirit of this disclosure are shown in the subsequent claims.

Claims

1. An ion implantation system, The gas supply assembly comprises at least one gas supply vessel that is in fluid communication with the arc chamber, The gas supply assembly is GeF ４ GeH ４ , H ２ It is configured to supply a gas component containing at least one of the following: a fluorine-containing gas, or any combination thereof. An ion implantation system in which, when the gas component is supplied from the at least one gas supply container to the arc chamber for implantation into a substrate, the beam current of Ge ions generated from the gas component is greater than the beam current of Ge ions generated from a control gas component.

2. The at least one gas supply container is GeF ４ A first container containing and GeH ４ The ion implantation system according to claim 1, comprising a second container containing a

3. The at least one gas supply container is GeF ４ and GeH ４ The ion implantation system according to claim 1, comprising a single container containing the following:

4. The gas supply assembly is H ２ The ion implantation system according to claim 1, further comprising an electrochemical cell configured to generate a ion.

5. The ion implantation system according to claim 1, wherein the arc chamber comprises a target material comprising at least one of pure germanium, isotope-enriched germanium, silicon germanium, or any combination thereof.

6. The ion implantation system according to claim 1, wherein the arc chamber is at least partially formed of a target material containing Ge.

7. The ion implantation system according to claim 1, wherein the arc chamber comprises a container for a target material containing Ge.

8. The ion implantation system according to claim 1, wherein the arc chamber comprises a liner at least partially formed of a target material containing Ge.

9. The gas component is GeF ４ , GeH ４ , and H ２ The ion implantation system according to claim 1, comprising

10. The aforementioned gas component is GeH ４ The ion implantation system according to claim 1, further comprising the fluorine-containing gas.

11. The aforementioned gas component is GeF ４ The ion implantation system according to claim 1, wherein the arc chamber comprises a target material containing Ge.

12. The aforementioned gas component is GeH ４ The ion implantation system according to claim 1, wherein the arc chamber comprises a target material containing Ge.

13. The aforementioned gas component is GeF ４ GeH ４ , and H ２ The ion implantation system according to claim 1, wherein the arc chamber comprises a target material containing Ge.

14. The aforementioned gaseous component is GeF at a volume percentage of 20% to 95% based on the total volume of the aforementioned gas components ４ and, Based on the total volume of the aforementioned gas components, GeH is used in a volume percentage of 5% to 80%. ４ and, Based on the total volume of the aforementioned gas components, H at a maximum volume percentage of 70% ２ and, The ion implantation system according to claim 1, comprising the fluorine-containing gas in a volume percentage of up to 90% based on the total volume of the gas components.

15. GeF ４ GeH ４ , or GeF ４ and GeH ４ The ion implantation system according to claim 1, wherein at least one of the elements comprises isotope-enriched germanium.

16. A method of ion implantation, This involves flowing gaseous components into the arc chamber. The aforementioned gas component is GeF ４ GeH ４ , H ２ , circulating a gas component containing at least one of fluorine-containing gases or any combination thereof, The process involves generating Ge ions from the gas component for injection into the substrate, A method comprising generating Ge ions such that the beam current of the Ge ions generated from the gas component is greater than the beam current of the Ge ions generated from a control gas component.

17. The method according to claim 16, wherein the flow includes flowing the gas component at a flow rate of 0.1 to 5 sccm.

18. The method according to claim 16, wherein the arc chamber includes a target material containing Ge.

19. The method according to claim 18, wherein the target material containing Ge comprises at least one of pure Ge, germanium isotopes, silicon germanium, or any combination thereof.

20. The method according to claim 16, wherein the Ge ions are generated without applying a bias voltage.

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