Electrical Equipment

Abstract

To increase the versatility of a power supply device.SOLUTION: A power supply device includes a power storage device and a power supply device. The power storage device includes data that identifies the power storage device. The power storage device includes a power storage body, a switch that controls whether to supply the power supplied from the power supply device to the power storage body, and a control circuit with a function of controlling a conductive state of the switch in accordance with a control signal input from the power supply device. The power supply device includes a signal processing circuit with functions of identifying the power storage device by the data input from the power storage device, generating the control signal, and outputting the control signal to the power storage device.SELECTED DRAWING: Figure 1

Description

[Technical Field]

[0001] The present invention is a product, a machine, a manufacture, a composition, Position of matter) and methods (processes, simple methods and production methods) In particular, one embodiment of the present invention relates to a power storage system, a power storage device, a semiconductor device, a display device, a power storage device, a power storage system, a power storage device, a display ... In particular, the present invention relates to a display device, a light-emitting device, or other electrical equipment, or a manufacturing method thereof. One embodiment of the present invention relates to a power storage system, a power storage device, a semiconductor device, and a display device each including an oxide semiconductor. The present invention relates to a device, a light-emitting device, or other electrical equipment, or a method for manufacturing the same. [Background technology]

[0002] In recent years, there has been a wide variety of electronic devices, including mobile phones and smartphones, power tools, and electric vehicles. The electric appliance is equipped with a power storage device.

[0003] The storage device is a device that stores electricity by charging it, such as a lithium-ion battery, and can be used repeatedly. The device has a secondary battery that can

[0004] In an electrical device equipped with such a power storage device, the power storage device can be connected to a power supply device, for example. It is possible to charge electrical devices (for example, Patent Document 1).

[0005] Furthermore, in the electrical equipment equipped with the power storage device, power is supplied wirelessly from a power supply device. This allows the power storage device to be charged without being physically connected to the power supply device ( For example, Patent Document 2 discloses an electromagnetic induction type and A power supply method using magnetic resonance is also disclosed.

[0006] The power supply methods disclosed in Patent Documents 1 and 2 use a power supply device that conforms to the specifications of the power storage device. This allows the power storage device to be charged. [Prior art documents] [Patent documents]

[0007] [Patent Document 1] Japanese Patent Application Laid-Open No. 2010-109778 [Patent Document 2] Japanese Patent Application Laid-Open No. 2012-125115 Summary of the Invention [Problem to be solved by the invention]

[0008] An object of one embodiment of the present invention is to improve the versatility of a power feeding device.

[0009] Another object of one embodiment of the present invention is to improve the versatility of a power storage system using a power feeding device. It shall be one of the following.

[0010] Another object of one embodiment of the present invention is to reduce the power consumption of a power storage device.

[0011] Another object of one embodiment of the present invention is to improve the reliability of a power storage device.

[0012] Another object of one embodiment of the present invention is to provide a novel power storage device. An object of one embodiment of the present invention is to provide a good power storage device.

[0013] An object of one embodiment of the present invention is to provide a semiconductor device with low off-state current. Another object of one embodiment of the present invention is to provide a semiconductor device with low power consumption. An object of one embodiment of the present invention is to provide a semiconductor device using a transparent semiconductor layer. An object of one embodiment of the present invention is to provide a semiconductor device including a highly reliable semiconductor layer.

[0014] In particular, one aspect of the present invention can solve at least one of the above-mentioned problems. Note that one embodiment of the present invention does not necessarily solve all of these problems. Problems other than these will be obvious from the description, drawings, claims, etc. Other issues can be extracted from the description, drawings, claims, etc. It is possible to do this. [Means for solving the problem]

[0015] In one embodiment of the present invention, for example, at least one of a power storage device and a power supply device is used. It is also possible.

[0016] In one embodiment of the present invention, data for identifying a power storage device (also referred to as identification data) is used to identify the power storage device. By optimizing the charging conditions of the device, for example, it is possible to This allows charging of electrical devices, improving versatility.

[0017] In this specification, data for identifying the power storage device includes mechanical characteristics of the power storage device, The specifications of the storage device, such as the electrical characteristics of the battery, the degree of deterioration, and the remaining amount of stored electrical energy, etc. The information on the power storage device includes, for example, the average power storage device Voltage, capacity of the power storage device, energy density of the power storage device, resistance of the power storage device, output voltage of the power storage device power, cycle characteristics of the power storage device, temperature of the power storage device, operating temperature range of the power storage device, The information on the storage device may include information on the manufacturer of the storage device. The information may include the serial number of the power storage device, the weight of the power storage device, the size of the power storage device, etc. The identification data may be individual identification data.

[0018] One embodiment of the present invention includes a power storage device and a power feeding device, and the power storage device is configured to identify the power storage device. The power storage device has data, and the power storage device supplies the power supplied from the power supply device to the power storage device. and a switch that controls whether the power supply is turned on or off according to a control signal input from the power supply device. and a control circuit having a function of controlling the state of the power supply device. A signal processing unit that has a function of identifying a power storage device by data, generating a control signal, and outputting the control signal to the power storage device. It is a power storage system having a signal processing circuit.

[0019] One embodiment of the present invention is a power storage device including a power receiving circuit, a data communication circuit, a power storage unit, and a power receiving circuit. A first transistor provided between the circuit and the power storage unit, and a gate of the power storage unit and the first transistor a control circuit electrically connected to the gate of the first transistor, the control circuit controlling the gate of the first transistor a processor electrically connected to the processor; a memory electrically connected to the processor; a controller electrically connected to the processor and the memory, The processor has a register, and the register stores data identifying the processor. a first memory circuit that stores data while power is supplied to the processor; a second memory circuit that stores data during a period when power supply to the memory is stopped; The second memory circuit has a second transistor that controls writing and holding of data. The transistor is a power storage device having an off-state current of 100 zA or less per 1 μm of channel width. is. [Effects of the Invention]

[0020] According to one embodiment of the present invention, the versatility of a power feeding device or a power storage system using the power feeding device can be improved. It is possible.

[0021] According to one embodiment of the present invention, the power consumption of a power storage device can be reduced.

[0022] According to one embodiment of the present invention, the reliability of a power storage device can be improved. [Brief explanation of the drawings]

[0023] [Figure 1] 1A and 1B are diagrams illustrating examples of power storage systems. [Figure 2] FIG. 1 is a diagram for explaining an example of an apparatus. [Figure 3] FIG. 1 is a diagram illustrating an example of a circuit. [Figure 4] FIG. 1 is a diagram for explaining an example of an apparatus. [Figure 5] 10A and 10B are diagrams illustrating an example of a method for driving a power storage system. [Figure 6] FIG. 1 is a diagram illustrating an example of a circuit. [Figure 7] FIG. 10 is a diagram for explaining an example of a register. [Figure 8] FIG. 1 is a diagram illustrating an example of a memory. [Figure 9] FIG. 2 is a diagram illustrating an example of the structure of the device. [Figure 10] 1A and 1B are diagrams illustrating examples of power storage units. [Figure 11] 1A and 1B are diagrams illustrating examples of power storage units. [Figure 12] 1A and 1B are diagrams illustrating examples of power storage units. [Figure 13] 1A and 1B are diagrams illustrating examples of power storage units. [Figure 14] 1A and 1B are diagrams illustrating examples of a part of a power storage unit. [Figure 15] 1A and 1B are diagrams illustrating examples of a part of a power storage unit. [Figure 16] 1A and 1B are diagrams illustrating examples of a part of a power storage unit. [Figure 17] 1A and 1B are diagrams illustrating examples of power storage units. [Figure 18] 1A and 1B are diagrams illustrating examples of electrical devices. [Figure 19] 1A and 1B are diagrams illustrating examples of electrical devices. [Figure 20] 1A and 1B are diagrams illustrating examples of electrical devices. [Figure 21] 1A and 1B are diagrams illustrating examples of electrical devices. [Figure 22] 1A and 1B are diagrams illustrating examples of electrical devices. [Figure 23] 1A and 1B are diagrams illustrating examples of electrical devices. [Figure 24] 1A and 1B are diagrams illustrating examples of electrical devices. [Figure 25] 4A and 4B are graphs showing charge and discharge characteristics of a power storage device. DETAILED DESCRIPTION OF THE INVENTION

[0024] Hereinafter, embodiments will be described with reference to the drawings. It is possible to carry out the invention in various forms and in various ways without departing from the spirit and scope of the invention. It will be readily apparent to those skilled in the art that various modifications can be made to the details. The present invention is not limited to the description of the embodiment shown in the accompanying drawings. The reference numerals indicating the same parts or parts having similar functions are used in different drawings. A detailed description of the relevant parts will be omitted.

[0025] Note that the content (or even a part of the content) described in one embodiment may be used in conjunction with that embodiment. Other content (or even part of content) described in the above, and / or one or more other implementations The content (or part of the content) described in the form of etc. can be done.

[0026] The contents described in the embodiments are explained in detail in each embodiment using various drawings. This refers to the content that is stated or the content that is stated using the text in the specification.

[0027] In addition, a drawing (or a part thereof) described in one embodiment may be different from another part of the drawing, Another figure (or a part thereof) described in the embodiment, and / or one or more By combining with the figure (or a part thereof) described in another embodiment of the present invention, , and many more diagrams can be constructed.

[0028] In this specification, the terms "active elements" and "passive elements" are used interchangeably. For all terminals of elements such as capacitors and resistors, the connection destination must be specified. However, a person skilled in the art may be able to compose an aspect of the invention. Even if the prior art is not specified, it is possible to determine that one aspect of the invention is clear and is described in the present specification, etc. In particular, if there are multiple terminals to which the terminal is connected, Therefore, it is not necessary to limit the active elements (transistors, diodes, etc.) to a specific location. ), and passive elements (capacitance elements, resistance elements, etc.) Specifying the destination may constitute an aspect of the invention.

[0029] In addition, regarding the contents not specified in the drawings or text in the specification, Or, an invention can be created that specifies the upper and lower limits of a certain value. When a numerical range is stated, the range may be arbitrarily narrowed or any part of the range may be included. By excluding certain points, the invention can be defined by excluding some of the numerical ranges. It is possible to specify that prior art does not fall within the technical scope of the present invention.

[0030] In this specification and the like, if at least the connection destination of a certain circuit is specified, it is understood by those skilled in the art. If you are a person who has knowledge of a circuit, you may be able to identify the invention. In some cases, a person skilled in the art can identify the invention by specifying the function. If the function is specified, it is determined that one aspect of the invention is clear and is described in the specification, etc. Therefore, it is possible to determine the connection of a circuit without specifying its function. If the above is specified, it is disclosed as one aspect of the invention and constitutes one aspect of the invention. Or, it is possible to specify the function of a circuit without specifying the connection destination. If the invention is disclosed as one aspect of the invention, it may constitute one aspect of the invention. It is Noh.

[0031] In addition, ordinal numbers such as 1st and 2nd are used to avoid confusion between components. The number is not limited to ordinal numbers.

[0032] (Embodiment 1) FIG. 1(A) is a diagram showing an example of the configuration of a power storage system. The power storage system shown in FIG. , device 100 and device 200.

[0033] The device 100 is supplied with power from the device 200. Note that the device 100 may be supplied with power from a separate power source. The device 100 may provide a force. The device 100 has the capability to input and output signals. The device 10 may have a function to receive power wirelessly. Alternatively, the device 100 may have a function to store electricity. In this case, the device 100 may be a power storage device. The device may have a function to receive power and a function to store power. In this case, the device 100 may be a power receiving device, a power storage device, or a semiconductor device. A protection circuit having a function of preventing the device 100 from being destroyed by overcharging and over-discharging. A path may be provided.

[0034] The device 100 has data 110. The data 110 is data for identifying the device 100. For example, the device 100 is provided with a memory, and the memory stores the data 110. The data 110 may be identification data.

[0035] The device 200 is powered by an external power source 240 (see FIG. 4). For example, a commercial power supply may be used. The device 200 has a function to supply power to the device 100. The device 200 has a function of inputting and outputting a signal. In this case, the device 200 may have a function of transmitting power wirelessly. Alternatively, the device 200 may have a function of supplying power to a power storage device. In this case, the device 200 may be a power supply device. and a function to supply power to a power storage device. In this case, the device 200 may be a power transmitting device, a power supplying device, or a semiconductor device. stomach.

[0036] In the power storage system shown in FIG. 1(A), power is supplied wirelessly from the device 200 to the device 100. In the power storage system shown in FIG. 1A, the device 200 and the device 101 are wirelessly connected to each other. Therefore, the device 200 and the device 100 can be connected to each other without contact. It is possible to transmit and receive signals between the devices. By connecting the device 100 to the device 200, power is supplied from the device 200 to the device 100. Alternatively, the device 100 may be connected to the device 200, so that the device 200 and the device 10 0. Signals may be sent and received between

[0037] When supplying power or signals wirelessly, radio waves in the 13.56 MHz band, for example, are used. However, the present invention is not limited to this, and other bands such as 135 kHz, 433 MHz, and 95 Radio waves in the 2 MHz band or 2.45 GHz band may also be used.

[0038] Furthermore, when power is supplied wirelessly, for example, electromagnetic induction, electric field resonance, magnetic field resonance, etc. A method such as a microwave method can be used.

[0039] Note that connection includes electrical connection, functional connection, and direct connection. Furthermore, the connection relationships of the components shown in the embodiments may be different from those shown in the drawings or text. It is not limited to only continuity relationships.

[0040] For example, if two objects are to be electrically connected, another element that can be electrically connected (e.g. , switches, transistors, inductors, resistors, diodes, display elements, light-emitting elements, A load or the like may be provided between the two objects.

[0041] If two objects are functionally connected, then there is another circuit that can be functionally connected (e.g. Logic circuits (inverters, NAND circuits, NOR circuits, etc.), signal conversion circuits (DA conversion circuits , AD conversion circuit, gamma correction circuit, etc.), or potential level conversion circuit (power supply circuit (booster circuit , step-down circuits, or level shifter circuits), voltage sources, current sources, switching circuits, amplifiers Circuits (op-amps, differential amplifier circuits, source follower circuits, buffer circuits, etc.), signal generation A circuit, a memory circuit, or a control circuit may be provided between the two objects.

[0042] The switch is in a conductive state (ON state) or a non-conductive state (OFF state), and the current It has the function to control whether or not current flows, or the function to select and switch the path through which current flows. For example, a switch may allow current to flow through a first path or through a second path. It has the function of selecting and switching whether to allow current to flow through the path.

[0043] Next, a configuration example of the device 100 will be described with reference to the circuit diagrams of FIGS. 2(A) and 2(B). .

[0044] The power storage unit 111 has a power storage function. The power storage unit 111 has a pair of terminals. One of the transistors includes, for example, the transistor 131, the transistor 132, and the transistor 170. The other end is connected to terminal b of the device 100 via the power storage unit 101, and the other end is connected to terminal d. 11 is provided with two or more terminals, and power is supplied from an external power source through the terminals, The electric body 111 may be charged.

[0045] The storage battery 111 may be a lead storage battery, a lithium ion battery, or a lithium ion polymer battery. nickel-iron secondary batteries, nickel-metal hydride batteries, nickel-cadmium batteries, nickel-iron batteries, Secondary batteries such as nickel-zinc storage batteries and silver oxide-zinc storage batteries, redox flow batteries, zinc - Liquid circulation type secondary batteries such as chlorine batteries and zinc-bromine batteries, aluminum-air batteries, and zinc-air batteries Batteries, mechanical charge type secondary batteries such as air and iron batteries, sodium and sulfur batteries, lithium High-temperature operating secondary batteries such as lithium-ion batteries and iron sulfide batteries can be used. Alternatively, the power storage unit 111 may be formed using, for example, a lithium ion capacitor.

[0046] One of the source and drain of the transistor 132 is connected to the power storage unit 111, and the other is The transistor 131 and the transistor 131 are connected to one of the source and drain of the transistor 131. The transistor 132 has a function of controlling charging and discharging of the power storage unit 111. The transistor 131 and the transistor 132 prevent overcharging and overdischarging of the power storage unit 111, for example. Alternatively, the transistor 1 may function as a protection switch to prevent The transistor 131 and the transistor 132 adjust the current flowing through the power storage unit 111 and the circuit 113. The circuit including the transistor 131 and the transistor 132 has a function of: The transistor 131 and the transistor 132 may be used as a protection circuit for controlling charging and discharging of the power storage unit 111. The transistor 132 may be used as a switch. 2 to configure a switch, and when the switch is turned off, The current flowing due to the parasitic diodes generated in the transistors 131 and 132 is The configuration is not limited to that shown in FIGS. 2(A) and 2(B), and examples thereof include For example, one transistor or three or more transistors may be used. Instead of the transistor 131 and the transistor 132, a bipolar transistor, a diode, or A logic circuit combining these may also be used.

[0047] The potentials of the gates of the transistors 131 and 132 are set by the circuit 113, for example. To be controlled.

[0048] The circuit 113 includes, for example, a transistor 131, a transistor 132, a transistor 150, and the transistor 170. The circuit 113 has a function of monitoring the charging state of the power storage unit 111. Alternatively, the circuit 113 may be implemented as a microcomputer or FPGA (Field Programmable Gate Array). Programmable Gate Array), or CPU (Central It may also be called a Processing Unit.

[0049] The circuit 113 includes, for example, a memory, a processor, and a controller. For example, data 110 is stored. The processor generates a control signal based on the data 110. The controller has the function of controlling the memory and the processor. The memory stores, for example, program data required to drive the processor. The program data may be, for example, a program data signal input from the circuit 142. Therefore, the transistor 131, the transistor 132, the transistor 150, and the transistor Examples include program data that causes the processor to control the potential of 170 gates. do.

[0050] The circuit 141 includes an antenna 114, a circuit 115, and a circuit 116. The circuit 141 has a function of receiving power wirelessly. That's fine.

[0051] The antenna 114 may be an antenna circuit. It has a capacity.

[0052] The circuit 115 rectifies the AC generated by receiving radio waves via the antenna 114. The circuit 115 may be a rectifier circuit. The path 115 may not be provided.

[0053] The circuit 116 has a function of smoothing the AC current rectified by the circuit 115 . The circuit 116 may be a regulator.

[0054] The transistor 150 is provided, for example, between the power storage unit 111 and the circuit 141. One of the source and drain of the transistor 150 is connected to the circuit 116, and the other is connected to the transistor The transistor 150 is connected to the other of the source and drain of the transistor 131. The power storage unit 111 has a function of controlling whether or not to charge the power storage unit 111 with the power received by the power storage unit 41. The transistor 150 may be used as a switch.

[0055] The potential of the gate of the transistor 150 is controlled by, for example, the circuit 113. The configuration is not limited to that shown in FIGS. 2A and 2B, and for example, a plurality of transistors may be used. Also, instead of the transistor 150, a bipolar transistor, a diode, or A logic circuit that combines these may also be used.

[0056] The circuit 142 includes an antenna 118 and a circuit 119. The circuit 142 receives a data signal The circuit 142 may be a transmitting / receiving circuit. The circuitry 142 may be a data communication circuitry.

[0057] The antenna 118 may be an antenna circuit. It has a capacity.

[0058] It should be noted that instead of the antenna 114 and the antenna 118, one antenna is connected to the circuit 115 and the circuit You can also connect to 119.

[0059] The circuit 119 has the function of generating a data signal from radio waves received via the antenna 118. The circuit 119 includes functional circuits such as a rectifier circuit, a demodulator circuit, and a modulator circuit. Alternatively, the circuit 119 may include an analog baseband circuit and a digital baseband circuit. Alternatively, the circuit 119 may have an interface. The circuit 119 may be a signal generating circuit.

[0060] A carrier wave may be used as the radio wave. A carrier wave is an AC signal also called a carrier. The data signal is transmitted using the carrier wave. This also includes modulated radio waves (modulated waves).

[0061] The circuit 119 includes, for example, a circuit 191, an interface 192, and a circuit The circuit 193 includes a path 194 .

[0062] The circuit 191 has a function of demodulating the received radio wave and extracting the data. 91 may be a demodulation circuit.

[0063] The interface 192 has a function of controlling the input and output of signals between the circuit 119 and the circuit 113. The interface 192 does not necessarily have to be provided.

[0064] The circuit 193 has a function of modulating the signal input via the interface 192. The circuit 193 may be a modulation circuit.

[0065] The circuit 194 has the function of amplifying the voltage of the modulated signal and adjusting the signal. The circuit 194 may be an amplifier circuit.

[0066] The circuit 121 has a function of smoothing the voltage output from the power storage unit 111. The circuit 121 may be used as a regulator.

[0067] The transistor 170 is connected to the transistor 131 and the transistor 132, for example, as shown in FIG. As shown in (B), the transistor 17 is provided between the load 143 and the power storage unit 111. One of the source and drain of transistor 130 is connected to the other of the source and drain of transistor 131. The transistor 170 controls the supply (discharge) of power from the power storage unit 111 to the load. The transistor 170 may be used as a switch.

[0068] The potential of the gate of the transistor 170 is controlled by the circuit 113. The configuration is not limited to that shown in FIG. 2B, and a plurality of transistors may be used, for example.

[0069] The device 100 has a function of outputting a power supply voltage V1 through terminals a and d. For example, a potential Va may be applied to the terminal d. For example, a potential Vd may be applied to the terminal d. For example, the potential Va may be set to a potential higher than the potential Vd. and terminal d, the power supply voltage V2 can be output. For example, the potential Vb may be set to a potential higher than the potential Vd.

[0070] For example, a control signal for controlling the circuit 113 can be input to the terminal c. For example, The number of terminals c is set according to the control signal, for example, I 2 C standard bus signals, etc. can be used.

[0071] The above is an example of the configuration of the device 100 shown in FIGS. 2(A) and 2(B).

[0072] Next, an example of the configuration of the device 200 will be described with reference to FIGS. 4(A) and 4(B).

[0073] The circuit 211 has a function of identifying the input data 110. The circuit 211 has a function of generating and outputting a signal based on the data 110. It may also be a signal processing circuit.

[0074] The circuit 211 includes, for example, a memory, a processor, and a controller. For example, the program data required to operate the processor may be stored. The data may be, for example, a program that causes a processor to adjust the amount of power depending on the identification data. RAM data, etc.

[0075] The circuit 230 includes an antenna 212, a circuit 213, a circuit 214, and a circuit 215. The circuit 230 is capable of generating a data signal from radio waves received via the antenna 212. The circuit 230 may be a transmitting / receiving circuit. It may also be a signal circuit.

[0076] The antenna 212 may be an antenna circuit. It has a capacity.

[0077] The circuit 213 is connected to the antenna 212. The circuit 213 receives, for example, The device has the function of demodulating the received radio waves and extracting the data signal. The data includes, for example, the data 110. Note that the circuit 213 is used as a demodulation circuit. Good too.

[0078] The circuit 214 is connected to the circuit 211. For example, the circuit 214 receives an input from the circuit 211. The circuit 214 has a function of modulating a signal.

[0079] As the modulation method, for example, amplitude modulation, frequency modulation, phase modulation, etc. may be used. good.

[0080] The circuit 215 has the function of amplifying the modulated data signal and conditioning the data signal, for example. The circuit 215 may be an amplifier circuit. stomach.

[0081] The circuit 231 includes a circuit 221, a circuit 222, and an antenna 223. Alternatively, the circuit 231 may be a power transmission circuit. As shown, the device 200 may be provided with a sensor 235. The sensor 235 may measure displacement, position, Speed, acceleration, angular velocity, rotation speed, distance, light, liquid, magnetism, temperature, chemical substances, sound, time, hardness temperature, electric field, current, voltage, power, radiation, flow rate, humidity, gradient, vibration, odor, or infrared rays. This allows the device 10 to measure, for example, the temperature using the sensor 235. It is also possible to determine whether or not there is a 0.

[0082] The circuit 221 has a function of generating an AC wave for supplying electric power, for example. 1 may be an oscillator circuit.

[0083] The circuit 222 has a function of amplifying and adjusting, for example, an AC wave. Note that the circuit 222 does not necessarily have to be provided.

[0084] The AC wave is output as a radio wave via an antenna 223. In this case, the antenna circuit has an antenna and a capacitance.

[0085] The device 200 may be powered, for example, by a mains power source.

[0086] Next, as an example of a method for driving the power storage system according to this embodiment, the power storage system shown in FIG. An example of a method for driving the system will be described with reference to the flowchart in FIG. The configuration is as shown in FIG. 2(B), and the configuration of the device 200 is as shown in FIG. 4(A).

[0087] In the example of the method for driving the power storage system shown in FIG. 1A, in step S1, The device 200 transmits a confirmation signal to the device 100. For example, the confirmation signal is transmitted approximately once every few seconds. It is preferable to do so.

[0088] Next, in step S2, the device 100 receives a confirmation signal.

[0089] At this time, the confirmation signal is extracted by the circuit 119 included in the circuit 142, and the confirmation signal is returned. The signal is output to path 113.

[0090] Next, in step S3, the device 100 generates a response signal corresponding to the received confirmation signal. and transmits it to the device 200.

[0091] At this time, the circuit 113 retrieves the necessary program data from the memory based on the data of the confirmation signal. The response signal includes a message indicating that the device 100 is Identifying data 110 is also included.

[0092] As a response method by signals between the device 100 and the device 200, for example, ISO15693 A method conforming to standards such as ISO14443 can be used. Use a method that complies with standards such as IEEE 802.11a / b / g / n (Ear Field Communication) NFC standards include NFCIP-1 (ISO18092). can be done.

[0093] The response signal may be used to detect the location of the device 100. For example, the circuit 211 may be used to The position of the device 100 can be detected by calculating the distance of the device 100 from the response signal. .

[0094] Furthermore, a radio wave containing the response signal generated by the circuit 142 is transmitted to the device 200 .

[0095] Next, in step S4, the device 200 receives the response signal. Identify the data 110.

[0096] For example, the circuit 230 extracts a response signal from the received radio wave and transmits the extracted response signal to the circuit 2 Output to 11.

[0097] The circuit 211 identifies the device 100 from the data 110 contained in the input response signal. For example, data for identifying the device 100 is stored in advance in a memory, and the data and 110. Furthermore, in step S5, the stored It is determined whether or not charging of the electric device 111 is necessary and possible.

[0098] If it is determined that charging is unnecessary or impossible, the operation of the circuit 231 is stopped. For example, Stopping the supply of power supply voltage to circuit 231 using the controller of circuit 211 This allows the operation of the circuit 231 to be stopped.

[0099] If it is determined that charging is necessary and possible, in step S6, the device 200 transfers the charge to the device 10. Start transmitting power to 0.

[0100] Even if it is determined that charging is necessary, the charge stored in the power storage unit 111 is zero. Instead, the charge required for the operation of the device 100, such as the power for operating the circuit 113, is stored in the capacitor. Preferably, the ion exchange reaction is stored in 111.

[0101] At this time, the circuit 231 is started to operate, and an alternating current is transmitted to the device 100, thereby Provides power to 00.

[0102] Depending on the data identifying the device 100, for example, the frequency or amplitude of the AC to be transmitted may be changed. By changing the amount of power supplied to the device 100, the amount of power supplied to the device 100 can be optimized. The power supply time can be adjusted according to the capacity of the power storage unit 111. 211, by controlling the conversion efficiency of the amplified AC, the frequency of the AC to be transmitted Alternatively, the amplitude or the like can be changed.

[0103] Next, in step S7, the device 100 starts receiving power, and charging of the power storage unit 111 starts. For example, the device 100 may be an electromagnetic induction type, an electric field resonance type, a magnetic field resonance type, or a micro Power can be received using a method such as a wave method.

[0104] The power supplied by the device 200 is regulated by the circuit 141. Furthermore, the circuit 113 By turning on the transistor 131, the transistor 132, and the transistor 150, This causes the power storage unit 111 to be charged.

[0105] Next, in step S8, the voltage Vbt of the power storage unit 111 is increased by charging to a voltage equal to or higher than the reference voltage Vref. For example, the circuit 113 determines whether the voltage Vbt is equal to or higher than the reference voltage Vref. can be compared.

[0106] If it is determined that the voltage Vbt is less than the reference voltage Vref, the power storage unit 111 continues to be charged. do.

[0107] On the other hand, if it is determined that the voltage Vbt is equal to or higher than the reference voltage Vref, the circuit 113 In step S9, the resistor 150 is turned off, and a voltage including a stop signal is supplied via the circuit 142. The wave is transmitted to the device 200. Note that if it is determined that the voltage Vbt is equal to or greater than the reference voltage Vref, Alternatively, the transistors 131 and 132 may be turned off. Overcharging of the electric body 111 can be prevented.

[0108] Note that even if the voltage Vbt is less than the reference voltage Vref, for example, the user may force the device 00 to terminate charging of the power storage unit 111. In this case, for example, 35 detects the position of the device 100, and the value of the position data of the device 100 exceeds the threshold value. In this case, the circuit 211 may stop the operation of the circuit 231. The device 200 transmits a confirmation signal to the device 100, and if there is no response signal from the device 100, the circuit 211 may cause the circuit 231 to stop operating.

[0109] Next, in step S10, when the device 200 receives a radio wave having a stop signal, the circuit 21 3 extracts the stop signal, and the circuit 213 outputs the extracted stop signal to the circuit 211.

[0110] When a stop signal is input, the circuit 211 stops the operation of the circuit 231. For example, the circuit 2 By using the controller 11 to stop the supply of power supply voltage to the circuit 231, In this way, the operation of the circuit 231 can be stopped during the period when the operation is not required. By stopping the power supply, power consumption can be reduced.

[0111] Then, transistors 131, 132, and 17 are turned on as needed. By turning ON the power supply voltage V1, the power supply voltage V2 can be output through terminals a and d. Power can be supplied to the load from the power supply 111. Alternatively, the transistor 131 and the transistor 13 2, and transistor 170 is turned on, so that current flows through terminals b and d. The power supply voltage V2 can be output, and power can be supplied from the power storage unit 111 to the load.

[0112] This concludes the description of the example of the method for driving the power storage system.

[0113] As described with reference to FIGS. 1 to 5, in the example of the power storage system according to the present embodiment, By identifying the device 100 by the device 200 using the different data, the maximum number of devices per device 100 can be Since charging can be performed under optimal conditions, charging can be performed regardless of the specifications of the device 100, for example. In the conventional power storage device, the specifications are set individually for each mobile terminal, for example. In such cases, it was necessary to prepare a different power supply device. If the connectors are different, other power supply devices cannot be used. When a user has multiple mobile terminals, the user needs multiple power supply devices, which is inconvenient. In this embodiment, for example, it is not necessary to change the device 200 depending on the specifications of the device 100. This allows for greater versatility.

[0114] Although an example in which the device 100 is identified by the device 200 using the identification data has been described, One aspect of the embodiment of the present invention is that it is not limited to this. In some cases, identification data may not be used. Therefore, the device 100 does not have to be identified by the device 200 .

[0115] (Embodiment 2) In this embodiment, a configuration example of the circuit 113 will be described with reference to FIG.

[0116] The circuit 113 includes a processor 710, a bus bridge 711, a RAM (Random Access Memory), ess Memory) 712, memory interface 713, controller 720, Interrupt controller 721, I / O interface (input / output interface) 72 2, and a power gate unit 730.

[0117] Furthermore, the circuit 113 includes a crystal oscillator circuit 741, a timer circuit 745, an I / O interface base 746, I / O port 750, comparator 751, I / O interface 752 , bus line 761, bus line 762, bus line 763, and data bus line 76 4. Furthermore, the circuit 113 has at least a connection terminal 77 as a connection portion with an external device. 770 to 776. Each of the connection terminals 770 to 776 is a It represents a terminal or a terminal group consisting of multiple terminals. Also, an oscillator 742 having a crystal oscillator 743 is connected to the circuit 113 via a connection terminal 772 and a connection terminal 773 .

[0118] The processor 710 has a register 785 and is connected to the bus line 76 via the bus bridge 711. 1 to 763 and data bus line 764.

[0119] The memory 712 is a storage device that can function as a main memory for the processor 710. The memory 712 is, for example, a random access memory. 0 executes, data required to execute the instructions, and data processed by the processor 710. The processor 710 writes data to the memory 712. The data 110 shown in FIG. 1 is stored in the memory 712. That's fine.

[0120] In the circuit 113, power supply to the memory 712 is cut off during the low power consumption mode. Therefore, the memory 712 is a memory that can retain data even when power is not supplied. It is preferable to configure it as follows.

[0121] The memory interface 713 is an input / output interface with an external storage device. In response to an instruction from the processor 710, the memory device 710 is connected to the connection terminal 776 via the memory interface 713. Data is written to and read from an external storage device connected to the device.

[0122] The clock generation circuit 715 generates a clock signal MCLK (hereinafter referred to as MCLK) used by the processor 710. , also simply called "MCLK".) It is a circuit that generates the MC. LK is also output to the controller 720 and the interrupt controller 721.

[0123] The controller 720 is a circuit for controlling the entire circuit 113, and controls, for example, the bus and memory. Control of memory maps, power control of circuit 113, clock generation circuit 715, crystal oscillation circuit It is possible to control 741, etc.

[0124] The connection terminal 770 is a terminal for inputting an external interrupt signal. A non-maskable interrupt signal NMI is input to the controller 720. When a non-maskable interrupt signal NMI is input to the CLKOUT pin, the controller 720 immediately starts the program. The processor 710 outputs a non-maskable interrupt signal NMI to the processor 710. Execute the write process.

[0125] An interrupt signal INT is input to the interrupt controller 721 via a connection terminal 770. The interrupt controller 721 receives an interrupt signal (TOIRQ) from a peripheral circuit. , P0IRQ, C0IRQ) are also input without passing through the buses (761 to 764).

[0126] The interrupt controller 721 has a function of assigning priority to interrupt requests. When the interrupt controller 721 detects an interrupt signal, it checks whether the interrupt request is valid. If the interrupt request is valid, the controller 720 receives an interrupt signal IN Outputs T.

[0127] The interrupt controller 721 also receives bus lines via the I / O interface 722. The signal lines 761 and 764 are connected to the data bus lines 764 .

[0128] When the interrupt signal INT is input, the controller 720 interrupts the processor 710. The interrupt request signal INT is output to cause the processor 710 to execute the interrupt process.

[0129] In addition, the interrupt signal T0IRQ is transmitted to the controller 72 without passing through the interrupt controller 721. 0 may be input directly. The controller 720 When this occurs, the non-maskable interrupt signal NMI is output to the processor 710. 710 to execute the interrupt process.

[0130] For example, a sensor may be provided in the device 100 to detect changes in the voltage of the power storage unit 111, A change in the distance between the device 200 and the object may be detected, and an interrupt process may be executed depending on the detection result. For example, power supply by device 200 may be stopped in response to an interrupt process.

[0131] The register 780 of the controller 720 is provided in the controller 720 and is The register 786 of the controller 721 is provided in the I / O interface 722. .

[0132] Next, a peripheral circuit included in the circuit 113 will be described. The peripheral circuits include a marker circuit 745, an I / O port 750, and a comparator 751. The circuit shown is an example, and a necessary circuit may be provided depending on the electrical equipment in which the circuit 113 is used. can.

[0133] The timer circuit 745 receives the clock signal TCLK( Hereafter, it is also referred to simply as "TCLK.") It has the function of measuring time. The clock generation circuit 715 generates an interrupt signal T0IRQ at predetermined time intervals. The timer circuit 745 outputs the I / O Connected to the bus line 761 and the data bus line 764 via the interface 746 It has been done.

[0134] TCLK is a clock signal with a lower frequency than MCLK. For example, the frequency of MCLK is is set to several MHz (e.g., 8 MHz), and TCLK is set to several tens of kHz (e.g., 32 kHz). The clock generation circuit 740 is a crystal oscillation circuit 74 The oscillator 742 is connected to a connection terminal 772 and a connection terminal 773. A quartz crystal oscillator 743 is used as the oscillator for 42. By configuring the clock generation circuit 740, all modules of the clock generation circuit 740 can be It is possible to incorporate it into the circuit 113.

[0135] The I / O port 750 inputs and outputs information to and from an external device connected via a connection terminal 774. It is an interface for inputting and outputting digital signals. For example, I / O port 750 is connected to circuit 119 via connection terminal 774, and 74 and the transistor 131 through the connection terminal 774. 2, and connected to transistor 150 via connection terminal 774, and and connected to the power storage unit 111 via a connection terminal 774. For example, the I / O port 750 generates an interrupt signal in response to an input digital signal. P0IRQ is output to the interrupt controller 721. , the circuit 119, the transistor 131, the transistor 132, and the transistor 133 are connected via the connection terminal 774. The transistor 150 is connected to the transistor 170 via a connection terminal 774. The power storage unit 111 is connected via a connection terminal 774 .

[0136] The comparator 751 detects, for example, the potential (or It is possible to compare the magnitude of the potential (or current) of a reference signal with that of a digital signal with a value of 0 or 1. Furthermore, when the value of this digital signal is 1, the comparator 751 generates a division The interrupt signal COIRQ can be generated by the interrupt controller 7. 21. Furthermore, the comparator 751 receives an input via a connection terminal 774, for example. A signal indicating the voltage Vbt of the power storage unit 111 being input is compared with a signal indicating the reference voltage Vref. It can also be done.

[0137] The I / O port 750 and the comparator 751 are connected via a common I / O interface 752. 761 and data bus line 764. Port 750 and comparator 751 each have a circuit that can be shared. Therefore, it is configured with one I / O interface 752, but the I / O port 750, The I / O interface of the comparator 751 can also be provided separately.

[0138] The registers of the peripheral circuits are provided in the corresponding input / output interfaces. The register 787 of the marker circuit 745 is provided in the I / O interface 746. The register 783 of the port 750 and the register 784 of the comparator 751 are respectively / O interface 752.

[0139] The circuit 113 has a power gate unit 730 for cutting off the power supply to the internal circuit. The power gate unit 730 supplies power only to the circuits required for operation. Therefore, the power consumption of the entire circuit 113 can be reduced.

[0140] As shown in FIG. 6, the circuit 113 includes a unit 701, a unit 702, and a unit 703 surrounded by a dashed line. The circuits of the unit 703 and the unit 704 are connected to the connection terminals via the power gate unit 730. The connection terminal 771 is connected to the power storage unit 111, for example.

[0141] In this embodiment, the unit 701 includes a timer circuit 745 and an I / O interface. The unit 702 includes an I / O port 750, a comparator 751, and an I / O / O interface 752, and the unit 703 includes an interrupt controller 721, and an I / O interface 722. The unit 704 includes a processor 710, a memory 712, a bus bridge 711, and a memory interface 713.

[0142] The power gate unit 730 is controlled by the controller 720. The unit 730 is a switch for cutting off the supply of power supply voltage to the units 701 to 704. The power supply voltage at this time is, for example, A voltage of 1 or the like can be used.

[0143] The on / off of the switches 731 and 732 is controlled by the controller 720 . Specifically, the controller 720 controls the power gate unit 710 in response to a request from the processor 710. output a signal to turn off some or all of the switches of the output 730 (power supply The controller 720 also generates a non-maskable interrupt signal NMI or a timer The interrupt signal T0IRQ from the power gate unit 745 is used as a trigger. The power supply circuit 30 outputs a signal to turn on the switch 30 (starts power supply).

[0144] In FIG. 6, the power gate unit 730 includes two switches (switch 731, switch However, the present invention is not limited to this, and any number of switches required for power cutoff may be used. A switch should be provided.

[0145] In this embodiment, the power supply to the unit 701 can be controlled independently. A switch 731 is provided to independently control the power supply to the units 702 to 704. However, the present invention is not limited to such a power supply path. For example, a switch other than the switch 732 may be provided to independently control the power supply to the memory 712. It is also possible to provide multiple switches for one circuit. That's fine.

[0146] In addition, the controller 720 is always connected to the connection terminal 730 without going through the power gate unit 730. The power supply voltage is supplied from 771. Also, to reduce the influence of noise, The oscillator circuit of the circuit 715 and the crystal oscillator circuit 741 each have a power supply circuit different from the power supply voltage. A power supply potential is supplied from an external power supply circuit.

[0147] By providing the controller 720 and the power gate unit 730, the circuit 11 The first mode of operation is normal operation. In this mode, all circuits in the circuit 113 are active. The operation mode is called "Active mode."

[0148] In the first operation mode, for example, a response based on a confirmation signal from the device 200 shown in the first embodiment is The response signal is generated.

[0149] The second and third operating modes are low-power modes, in which some circuits are active. In the second mode of operation, the controller 720 and the timer circuit 745 and its related circuits (crystal oscillator circuit 741, I / O interface 746) are active. In a third mode of operation, only controller 720 is active. The second operation mode is called "Noff1 mode" and the third operation mode is called "Noff2 mode". In the Noff1 mode, the controller 720 and a part of the peripheral circuit ( In Noff2 mode, only the controller 720 operates. is working.

[0150] The oscillator of the clock generation circuit 715 and the crystal oscillation circuit 741 operate regardless of the operating mode. The clock generation circuit 715 and the crystal oscillation circuit 741 are kept inactive. To activate the clock, an enable signal is input from the controller 720 or externally. This is done by stopping the oscillation of the clock generation circuit 715 and the crystal oscillation circuit 741.

[0151] In addition, in the Noff1 and Noff2 modes, power is supplied by the power gate unit 730. Therefore, the I / O port 750 and I / O interface 752 are inactive. e, but in order for the external device connected to the connection terminal 774 to operate normally, Power is supplied to the O port 750 and part of the I / O interface 752. is the output buffer of the I / O port 750, and is a register 783 for the I / O port 750. In Noff1 and Noff2 modes, the actual function of I / O port 750 is I / O interface 752 and data transmission function with external devices, interrupt signal generation function Similarly, the communication function of the I / O interface 752 is also stopped. do.

[0152] In this specification, a circuit is inactive when the power supply is cut off and the circuit is stopped. In addition to the state where the main functions in Active mode (normal operation mode) are stopped, This includes operating in a power-saving mode, or in a more power-efficient mode than Active mode.

[0153] With the above configuration, for example, if the user forcibly terminates the charging operation of the device 100, When the processor 710 requests the power gate unit 730 to outputs a signal to turn off some or all of the In addition, it is possible to stop the supply of power to unnecessary circuit blocks.

[0154] Furthermore, an example of a register configuration applicable to each circuit block will be described with reference to FIG. 7. .

[0155] The register shown in FIG. 7A includes a memory circuit 651, a memory circuit 652, a selector 653, and , has.

[0156] The memory circuit 651 receives a reset signal RST, a clock signal CLK, and a data signal D. The memory circuit 651 stores the data of the data signal D input in accordance with the clock signal CLK. The memory circuit 651 has a function of holding data and outputting it as a data signal Q. For example, registers such as buffer registers and general-purpose registers can be configured. The memory circuit 651 is an SRAM (Static Random Access Memory). It is also possible to provide a cache memory consisting of registers and The cache memory can save data in the storage circuit 652.

[0157] The memory circuit 652 receives a write control signal WE, a read control signal RD, and a data signal. The write control signal WE, the read control signal RD, etc. are input via terminal c, for example. may be input as follows.

[0158] The memory circuit 652 stores the data of the input data signal in accordance with the write control signal WE. and outputs the stored data as a data signal in accordance with a read control signal RD. Possess the ability.

[0159] The selector 653 selects the data signal D or the data signal from the memory circuit 652 in accordance with the read control signal RD. The data signal output from the selector 651 is selected and input to the memory circuit 651.

[0160] The memory circuit 652 includes a transistor 631 and a capacitor 632 .

[0161] The transistor 631 is an n-channel transistor and functions as a selection transistor. One of the source and drain of the transistor 631 is connected to the output of the memory circuit 651. Furthermore, the back gate of the transistor 631 is supplied with a power supply potential. The transistor 631 outputs the data from the memory circuit 651 in accordance with the write control signal WE. It has the function of controlling the retention of the input data signal.

[0162] The transistor 631 may be, for example, a transistor with low off-state current. For example, oxides with a wider band gap than silicon are used as transistors with low leakage current. A transistor having a channel formation region containing a semiconductor, the channel formation region being substantially i-type. A register can be applied.

[0163] For example, impurities such as hydrogen or water are removed as much as possible, and oxygen is supplied to fill the oxygen vacancies as much as possible. By reducing the amount of the oxide semiconductor as much as possible, a transistor including the oxide semiconductor can be manufactured. In the channel formation region, secondary ion mass spectroscopy (SIMS) The hydrogen atoms, which are called donor impurities, are measured by mass spectrometry. The amount of 1×10 19 / cm 3 Less than 1 × 10 18 / cm 3 Reduce to the following: The off-state current of the transistor 631 is preferably 1×1 μm per 1 μm of channel width at 25° C. 0 -19 A (100zA) or less. More preferably, it is 1×10 -22 A(100yA) The lower the off-state current of a transistor, the better. The lower limit of the current is approximately 1×10 -30 It is estimated to be A / μm.

[0164] Examples of the oxide semiconductor include In-based metal oxides, Zn-based metal oxides, and In-Zn-based Metal oxides, In--Ga--Zn-based metal oxides, etc. can be used.

[0165] One of the pair of electrodes of the capacitor 632 is connected to the other of the source and drain of the transistor 631. The other end of the capacitor 632 is connected to a power supply potential VSS. The off-state current of the transistor 631 is very low. Since the voltage is so low that the charge in the capacitor 632 is held and data is retained even when the supply of power supply voltage is stopped, It will be held.

[0166] The transistor 633 is a p-channel transistor. A power supply potential VDD is supplied to one of the drains, and a read control signal RD is supplied to the gate. is entered.

[0167] The transistor 634 is an n-channel transistor. and one of the drain and source of the transistor 633 is connected to the other of the source and drain of the transistor 633. A read control signal RD is input to the gate.

[0168] The transistor 635 is an n-channel transistor. and one of the drain and source of the transistor 634 is connected to the other of the source and drain of the transistor 634. The other of the source and the drain is supplied with the power supply potential VSS.

[0169] The input terminal of the inverter 636 is connected to the other of the source and drain of the transistor 633. The output terminal of the inverter 636 is connected to the input terminal of the selector 653. can be.

[0170] One of a pair of electrodes of the capacitor 637 is connected to the input terminal of the inverter 636, and the other is The power supply potential VSS is supplied to the capacitor 637. It has the function of holding an electric charge based on the signal data.

[0171] The present invention is not limited to the above, and may be applied to, for example, a phase-change memory (PRAM). RAM (also called PCM (Phase Change Memory)), resistance variable ReRAM (also called Resistance RAM), magnetoresistive memory It uses memory such as MRAM (Magnetoresistive RAM) For example, a magnetic tunnel junction device (MTJ) may be used as the MRAM. MR using J (Magnetic Tunnel Junction) element AM can be applied.

[0172] Next, an example of a method for driving the register shown in FIG. 7(A) will be described.

[0173] First, during normal operation, the power supply voltage, reset signal RST, and clock signal The CLK is supplied to the register. At this time, the selector 653 selects the data signal The data D is output to the memory circuit 651. The memory circuit 651 receives the data D in accordance with the clock signal CLK. At this time, the data of the data signal D inputted is held by the read control signal RD. Transistor 633 is turned on and transistor 634 is turned off.

[0174] Next, during the backup period immediately before the power supply voltage is stopped, In response to this pulse, the transistor 631 is turned on, and the data signal D is stored in the memory circuit 652. The data is stored and transistor 631 is turned off. The supply of the clock signal CLK is stopped, and then the reset signal RST is sent to the register. When the transistor 631 is in an on state, the supply of the A positive power supply potential may be supplied to the back gate. Transistor 633 is turned on and transistor 634 is turned off.

[0175] Next, during the power supply stop period, the supply of power supply voltage to the register is stopped. Since the off-state current of the transistor 631 in the memory circuit 652 is low, the stored data is retained. By supplying the ground potential GND instead of the power supply potential VDD, For example, the ground potential can be considered to be the voltage supply cutoff at the terminal When the transistor 631 is in the off state, the voltage Vcc is supplied via the transistor 63 A negative power supply potential may be supplied to the back gate of transistor 631 to keep the transistor 631 in an off state. stomach.

[0176] Next, during the recovery period just before returning to normal operation, Then, the supply of the clock signal CLK is resumed, and then the supply of the reset signal CLK is resumed. At this time, the supply of the clock signal RST is resumed. The supply of the clock signal CLK is then resumed. The transistor 633 is turned off in response to the pulse of the control signal RD, and the transistor 63 4 is turned on, and the data signal of the value stored in the memory circuit 652 is output to the selector 653. The selector 653 selects the data signal in accordance with the pulse of the read control signal RD. This outputs the signal to the memory circuit 651. This restores the memory circuit 651 to the state immediately before the power supply stop period. It can be restored.

[0177] After that, during the normal operation period, the memory circuit 651 performs normal operation again.

[0178] The above is an example of the method for driving the register shown in FIG.

[0179] The register is not limited to the configuration shown in FIG.

[0180] For example, the register shown in FIG. 7(B) has a larger number of transactions than the register configuration shown in FIG. 7(A). There are no transistors 633, 634, inverters 636, or capacitors 637. The registers shown in FIG. 7A are the same as those shown in FIG. The description of the registers shown in (A) will be used as appropriate.

[0181] At this time, one of the source and drain of the transistor 635 is connected to the input terminal of the selector 653. connected to the child.

[0182] Also, the selector 654 selects the power supply potential VS S or the data signal output from the memory circuit 651 is selected and input to the memory circuit 652. .

[0183] Next, an example of a method for driving the register shown in FIG. 7(B) will be described.

[0184] First, during the normal operation period, the power supply voltage, the reset signal RST, and the clock signal CLK are At this time, the selector 653 selects the data of the data signal D. The memory circuit 651 outputs the input signal in accordance with the clock signal CLK. The data of the data signal D is held. Also, the selector 65 is turned on in response to the write control signal WE2. 4 outputs the power supply potential VSS to the memory circuit 652. In the memory circuit 652, In response to the pulse of the signal WE, the transistor 631 is turned on, and the power supply voltage is supplied to the memory circuit 652. The position VSS is stored as data.

[0185] Next, during the backup period immediately before the power supply voltage is stopped, the write control signal WE2 is set to Therefore, the selector 654 selects the output terminal of the memory circuit 651 instead of supplying the power supply potential VSS. When this signal is input, one of the source and drain of the transistor 631 is turned on. In response to the pulse of the control signal WE, the transistor 631 is turned on, and the data is stored in the memory circuit 652. The data of the data signal D is stored, and the transistor 631 is turned off. The data in the memory circuit 652 is rewritten only when the potential of the data signal D is the same as the power supply potential VDD. Furthermore, the supply of the clock signal CLK to the register is stopped, and the When the transistor 631 is in the ON state, the supply of the reset signal RST is stopped. A positive power supply potential may be supplied to the back gate of the transistor 631 .

[0186] Next, during the power supply stop period, the supply of power supply voltage to the register is stopped. In the memory circuit 652, the off-state current of the transistor 631 is low, so that the data value is maintained. By supplying the ground potential GND instead of the power supply potential VDD, It can also be considered as stopping the supply of voltage. When the transistor 631 is in the off state, the negative power supply potential is supplied to the back gate of the transistor 631. The transistor may be kept in an off state by using a voltage regulator.

[0187] Next, during the recovery period just before returning to normal operation, Then, the supply of the clock signal CLK is resumed, and then the supply of the reset signal The supply of RST is resumed. At this time, the wiring through which the clock signal CLK is supplied is set to the power supply potential. VDD, and then the supply of the clock signal CLK is resumed. In response to the pulse of the read control signal RD, a value corresponding to the data stored in the memory circuit 652 is read. The data signal is output to the memory circuit 651. This stores the state immediately before the power supply stop period. The circuit 651 can be restored.

[0188] After that, during the normal operation period, the memory circuit 651 performs normal operation again.

[0189] The above is an example of a method for driving the register shown in FIG.

[0190] By using the configuration shown in FIG. 7B, the power supply potential VSS during the backup period This eliminates the need to write data, making operations faster.

[0191] When the above registers are used for registers 784 to 787, the Nof When switching to the f1 and Noff2 modes, registers 784 to 788 are set before power is turned off. The data in the memory circuit 651 of FIG. 7 is written to the memory circuit 652, and the data in the memory circuit 651 is written to the memory circuit 652. It will be reset to the initial value and the power will be cut off.

[0192] Also, when returning from Noff1 or Noff2 mode to Active, register 7 When power supply to 84 to 787 is resumed, the data in the memory circuit 651 is first reset to the initial value. Then, the data in the storage circuit 652 is written to the storage circuit 651.

[0193] Therefore, even in the low power consumption mode, the data required for processing by the circuit 113 is stored in the registers 784 to 786. Since it is held by 787, circuit 113 is switched from low power consumption mode to active mode. This allows the device 100 to be restored immediately, thereby reducing the power consumption of the device 100. can.

[0194] (Embodiment 3) In this embodiment, an example of the memory device will be described, which is the memory 712 shown in FIG.

[0195] An example of the configuration of a storage device according to this embodiment will be described.

[0196] An example of a memory cell array will be described with reference to FIG.

[0197] The memory cell array shown in FIG. 8 includes a plurality of memory cells (storage circuits) 4 arranged in I rows and J columns. 00, wirings BL_1 to BL_J, wirings WL_1 to WL_I, and wirings CL_1 to CL_I. The pixel includes a line CL_I and a wiring SL to which a potential of a predetermined value is supplied.

[0198] In the memory cell array shown in FIG. 8, M (M is a natural number between 1 and I) rows and N (N is a natural number between 1 and I) rows are arranged. The memory cell 400 (memory cell 400(M,N)) in the upper (Jth) column is a natural number less than or equal to the A resistor 411 (M, N), a transistor 412 (M, N), and a capacitance element 413 (M, N) ) and.

[0199] One of the source and the drain of the transistor 411(M,N) is connected to the wiring BL_N. Furthermore, the gate of the transistor 411(M,N) is connected to the wiring WL_M. In addition, a circuit using a diode and a capacitor is used to turn on the transistor 411 ( The potential of the back gate of each of the electrodes M and N may be maintained.

[0200] The transistor 411(M,N) is an n-channel transistor, and This is a selection transistor that controls writing and retention.

[0201] The transistor 411(M,N) is the above-mentioned transistor with low off-state current. It is possible.

[0202] The transistor 412 is a p-channel transistor. ) has one of its source and drain connected to the wiring BL_N, and the other of its source and drain connected to the wiring BL_N. The gate of the transistor 412(M,N) is connected to the wiring SL. The source and drain of the transistor 411(M, N) are connected to the other of the source and drain of the transistor 411(M, N).

[0203] The transistor 412 (M, N) is an output transistor that sets the potential of the data to be output. It has the function of

[0204] One of a pair of electrodes of the capacitor 413(M,N) is connected to the source of the transistor 411(M,N). The other end is connected to the wiring CL_M.

[0205] The capacitor 413(M,N) functions as a storage capacitor for storing data.

[0206] The above is the description of the configuration example of the memory cell array shown in FIG.

[0207] Next, an example of a method for driving a memory having the memory cell array shown in FIG. For example, data is written sequentially to the memory cells 400 in the Mth row. Although the case where data is read out will be described, the present invention is not limited to this.

[0208] First, when writing data to the memory cell 400 in the Mth row, the potential of the wiring WL_M is set to VH. The potential of all other wirings WL_other is set to VL.

[0209] VH is a potential (for example, a voltage) that is greater than a reference potential (for example, a power supply potential VSS). V is the power supply potential VDD, and VL is a potential below the reference potential.

[0210] At this time, in each of the memory cells 400 in the Mth row, the transistor 411 is turned on. The potential of one of the pair of electrodes of the capacitor 413 becomes equal to the potential of each wiring BL. do.

[0211] Then, the transistor 411 is turned off, and the gate of the transistor 412 is in a floating state. The potential of the gate of transistor 412 is maintained.

[0212] By performing the above operation for each row, data can be written to all memory cells 400. Cut.

[0213] When data is read from the memory cell 400 in the Mth row, the potential of all the wirings WL is set to V L, the potential of the wiring CL_M is set to VL, and the potential of all other wiring CL_other is set to VH To do so.

[0214] In the memory cell 400 in the Mth row, The resistance value of the transistor 412 is determined by the voltage at the gate of the transistor 412. The potential of the memory cell 4 is stored as data according to the current flowing between the source and drain of the memory cell 4. It can be read from 00.

[0215] Furthermore, by repeating the above operation for each row, all the memory cells 400 are de-energized. This concludes the description of an example of a method for driving the memory.

[0216] (Fourth embodiment) In this embodiment, an example of the structure of the circuit included in the device 100 will be described with reference to FIG. Examples of the circuits include circuit 113, circuit 115, circuit 116, circuit 119, and circuit 121. Examples include:

[0217] The device 100 shown in FIG. 9A includes a transistor 801 containing silicon in a channel formation region. and a transistor 802 having an oxide semiconductor in a channel formation region thereof. The structure is such that multiple wiring layers are stacked on top of the transistor 802 .

[0218] The transistor 801 is provided in a semiconductor substrate having a buried insulating layer.

[0219] The transistor 802 includes a conductive layer 811a embedded in an insulating layer and a gate insulating layer 811b on the conductive layer 811a. The insulating layer 814 and the oxide semiconductor layer 811a overlapping the conductive layer 811a with the insulating layer 814 interposed therebetween. an oxide semiconductor layer 813; conductive layers 815a and 815b connected to the oxide semiconductor layer 813; An insulating layer 816 is provided on the conductor layer 813, the conductive layers 815a and 815b, and the insulating layer 81 The conductive layer 818 overlaps with the oxide semiconductor layer 813 with the insulating film 6 sandwiched therebetween. The conductive layer 811a functions as a back gate electrode. The insulating layer 814 functions as a gate insulator. The oxide semiconductor layer 813 functions as a channel formation layer. The conductive layers 815a and 815b function as a source electrode and a drain electrode. The insulating layer 816 functions as a gate insulating layer. The conductive layer 818 functions as a gate electrode. It has the function of

[0220] The insulating layer 814 preferably has a function of blocking impurities such as hydrogen. , an aluminum oxide layer, a silicon nitride layer, etc. have the function of blocking hydrogen. In the structure shown in (A), the oxide semiconductor layer 813 is surrounded by insulating layers 814 and 816. Therefore, impurities such as hydrogen from the outside (for example, the transistor 801) to the transistor 802 The diffusion of impurities is suppressed.

[0221] Furthermore, the conductive layer 815a is formed at an opening provided through the insulating layer 814, and the conductive layer 811 a is connected to a conductive layer 811b formed by the same conductive film as the conductive layer 811a. It is connected to the gate electrode of the transistor 801 .

[0222] Furthermore, wiring layers 822, 824, and 826 are stacked in this order above the transistor 802. The wiring layer 822 is connected to the conductive layer 815b by the wiring layer 821 embedded in the insulating layer. The wiring layer 824 is connected to the wiring layer 822 by the wiring layer 823 embedded in the insulating layer. The wiring layer 826 is connected to the wiring layer 824 by the wiring layer 825 embedded in the insulating layer. For example, the wiring layer 826 may be used as an external connection terminal.

[0223] Furthermore, in the structure shown in FIG. 9B, a transistor 801 and a transistor 802 are stacked. Furthermore, a plurality of wiring layers are stacked between the transistor 801 and the transistor 802. 9B also shows a terminal portion 803.

[0224] Above the transistor 801, wiring layers 831a, 833a, and 835a are stacked in this order. The wiring layer 831a is connected to the gate electrode of the transistor 801. The wiring layer 833a is connected to the wiring layer 831a by a wiring layer 832a embedded in the insulating layer. The wiring layer 835a is connected to the wiring layer 833a by the wiring layer 834a embedded in the insulating layer. do.

[0225] Furthermore, the conductive layer 815a is formed at an opening provided through the insulating layer 814, and the conductive layer 811 a is connected to a conductive layer 811b formed by the same conductive film as a, and the conductive layer 811b is an insulating The wiring layer 836a is embedded in the layer and connects to the wiring layer 835a.

[0226] Furthermore, a wiring layer 838a is stacked above the transistor 802. 838a is connected to the conductive layer 815b by a wiring layer 837a embedded in an insulating layer.

[0227] The terminal portion 803 is provided with a wiring layer 831 formed of the same conductive film as the wiring layer 831a. b, a wiring layer 833b formed of the same conductive film as the wiring layer 833a, and a wiring layer 835a The wiring layer 835b is formed from the same conductive film as the conductive layer 811a. The conductive layer 811c is formed using the same conductive film as the conductive layer 815a. c, a wiring layer 837b formed of the same conductive film as the wiring layer 837a, a wiring layer 838a, and The wiring layer 833 is formed by laminating a wiring layer 838b made of the same conductive film. The wiring layer 83b is embedded in the insulating layer and is formed of the same conductive film as the wiring layer 832a. The wiring layer 835b is embedded in an insulating layer and is connected to the wiring layer 831b by a wiring layer 2b. The wiring layer 834b is formed of the same conductive film as the layer 834a and is connected to the wiring layer 833b. The conductive layer 811c is buried in the insulating layer and is made of the same conductive film as the wiring layer 836a. The conductive layer 815c is connected to the wiring layer 835b by the formed wiring layer 836b. The wiring layer 838b is connected to the conductive layer 811c through an opening formed through the layer 814. , a wiring layer 837b formed of the same conductive film as the wiring layer 837a and embedded in the insulating layer. For example, the wiring layer 838b is used as an external connection terminal. That's fine.

[0228] Furthermore, each component will be described.

[0229] Conductive layers 811a to 811c, conductive layer 818, wiring layer 831a to wiring layer 838a The wiring layers 831b to 838b may be made of, for example, molybdenum, titanium, chromium, or titanium. tantalum, magnesium, silver, tungsten, aluminum, copper, neodymium, ruthenium, Alternatively, a layer containing a metal material such as scandium can be used. Layers 811c, 818, wiring layer 831a to wiring layer 838a, wiring layer 831b to wiring layer 8 Metal oxides or the like may be used as 38b.

[0230] The insulating layers including the insulating layer 814 and the insulating layer 816 may be, for example, a silicon oxide layer or a silicon nitride layer. Silicon oxide layer, silicon nitride layer, silicon nitride oxide layer, aluminum oxide layer, aluminum nitride layer aluminum layer, aluminum oxide nitride layer, aluminum nitride oxide layer, hafnium oxide layer, gas oxide For example, the insulating layer 814 and the insulating layer 816 can be formed of an oxide film. A silicon nitride layer, a silicon oxynitride layer, or the like can be used. Note that the insulating layers 814 and 816 are not necessarily provided.

[0231] The oxide semiconductor layer 813 may be, for example, an In-based metal oxide, a Zn-based metal oxide, or an In-Z The oxide semiconductor layer may be made of an n-based metal oxide or an In-Ga-Zn-based metal oxide. The non-single crystal may have, for example, a non-single crystal. It has polycrystalline, microcrystalline and amorphous. Amorphous is microcrystalline. The defect level density of the microcrystal is higher than that of the CAAC. The oxide semiconductor having CAAC is called CAAC-OS (C Axis Ali It is called ignited Crystalline Oxide Semiconductor The oxide semiconductor layer may include, for example, a CAAC-OS. The oxide semiconductor has a c-axis aligned, and an a-axis and / or b-axis not aligned macroscopically.

[0232] In addition, instead of a part or all of the Ga contained in the In-Ga-Zn-based metal oxide, Metal oxides containing other metal elements may also be used. It is sufficient to use a metal element that can bond with more oxygen atoms than aluminum, such as titanium or zinc. If one or more of the elements ammonium, hafnium, germanium, and tin are used, The other metal elements include lanthanum, cerium, praseodymium, and neodymium. , samarium, europium, gadolinium, terbium, dysprosium, holmium , erbium, thulium, ytterbium, and lutetium. These metal elements have the function of a stabilizer. The amount of these metal elements added is an amount that allows the metal oxide to function as a semiconductor. Using a metal element that can bond with more oxygen atoms than gallium, and furthermore, in a metal oxide By supplying oxygen to the metal oxide, oxygen defects in the metal oxide can be reduced.

[0233] The conductive layers 815a to 815c can be formed using, for example, molybdenum, titanium, chromium, or titanium. Ta, magnesium, silver, tungsten, aluminum, copper, neodymium, ruthenium, or A layer containing a metal material such as scandium can be used for the conductive layers 815a to 815c. Metal oxide or the like may be used as 815c.

[0234] As shown in FIG. 9, in an example of the device 100 according to this embodiment, different transistors are stacked. By configuring it in layers, the circuit area can be reduced.

[0235] However, the present invention is not limited to this, and the structure of the device 200 may be the above structure.

[0236] (Embodiment 5) In this embodiment, an example of the structure of the device 100 will be described with reference to FIGS.

[0237] 10(A) and 10(B) are diagrams showing the external appearance of the device 100. The device 100 includes: The device includes a circuit board 900 and a power storage unit 913. A label 910 is attached to the power storage unit 913. Furthermore, as shown in FIG. 10(B), the device 100 has a terminal 951 and a terminal 95 2, and on the back of the label 910, an antenna 914 and an antenna 915 are provided.

[0238] The circuit board 900 has a terminal 911 and a circuit 912. The terminal 911 is connected to a terminal 951. , terminal 952, antenna 914, antenna 915, and circuit 912. A plurality of terminals 911 are provided, and each of the plurality of terminals 911 is used as a control signal input terminal, a power supply terminal, etc. may also be used.

[0239] The circuit 912 is, for example, the circuit 113, the circuit 115, the circuit 116, and the circuit 111 shown in FIG. 9, the circuit 121, the transistor 131, the transistor 132, the transistor 150, and The circuit 912 may be provided on the back surface of the circuit board 900. The antenna 914 corresponds to the antenna 114, and the antenna 915 corresponds to the antenna 118. The antennas 914 and 915 are not limited to being coil-shaped. For example, it may be a linear or plate-shaped antenna. Antennas such as EH antennas, magnetic field antennas, and dielectric antennas may also be used. The antenna 914 or the antenna 915 may be a flat conductor. can function as one of the conductors for electric field coupling. The antenna 914 or the antenna 915 is used as one of the two conductors. This allows power to be exchanged not only in electromagnetic fields and magnetic fields but also in electric fields. can.

[0240] The power storage unit 913 corresponds to the power storage unit 111 in FIG.

[0241] The line width of antenna 914 is preferably larger than the line width of antenna 915. This allows the amount of power received by the antenna 914 to be increased.

[0242] The device 100 includes a layer 916 between the antenna 914 and the antenna 915 and the power storage body 913. The layer 916 can prevent, for example, shielding of an electromagnetic field from the power storage unit 913. The layer 916 can be made of, for example, a magnetic material. It may also be a layer.

[0243] The structure of the device 100 is not limited to that shown in FIG.

[0244] For example, as shown in FIGS. 11(A-1) and 11(A-2), In the power storage unit 913 shown in (B), an antenna may be provided on each of a pair of opposing surfaces. FIG. 11(A-1) is an external view seen from one side of the pair of surfaces. 10(A) and 10(B) are external views seen from the other side of the pair of surfaces. 10(A) and 10(B) are the same as those in the device 100 shown in FIG. 10(A) and FIG. 10(B). The description of the device 100 can be used as appropriate.

[0245] As shown in FIG. 11(A-1), a layer 916 is sandwiched between one of a pair of surfaces of a power storage unit 913. 11(A-2), a tenon 914 is provided on the other of the pair of surfaces of the power storage unit 913. The antenna 915 is provided with a layer 917 sandwiched therebetween. The layer 917 has a function of preventing the electromagnetic field from being blocked. Layer 917 may be a shielding layer.

[0246] By adopting the above structure, the size of both the antenna 914 and the antenna 915 can be increased. It is possible.

[0247] 11(B-1) and 11(B-2), In the case of the power storage unit 913 shown in B), a separate antenna may be provided on each of a pair of opposing surfaces. FIG. 11(B-1) is an external view seen from one side of the pair of surfaces. B-2) is an external view seen from the other side of the pair of surfaces. The same parts as those of the device 100 shown in FIG. 10(B) are shown in FIGS. 10(A) and 10(B). The description of the device 100 shown in the accompanying drawings can be used as appropriate.

[0248] As shown in FIG. 11(B-1), a layer 916 is sandwiched between one of a pair of surfaces of a power storage unit 913. 11(B-2), a capacitor 91 An antenna 918 is provided on the other of the pair of surfaces of the substrate 3, sandwiching a layer 917 therebetween. For example, the antenna 918 has a function of performing data communication with an external device. For example, antennas having shapes applicable to the antennas 914 and 915 can be applied. As a communication method between the device 100 and other devices via the antenna 918, NF Applying a response method that can be used between the device 100 and the device 200, such as C. can be done.

[0249] 12A, the power storage unit 913 shown in FIGS. 10A and 10B A display device 920 may be provided. The display device 920 is connected to the terminal 911 via the terminal 919. The label 910 is not necessarily provided in the area where the display device 920 is provided. It should be noted that the same parts as those of the device 100 shown in Figs. 10(A) and 10(B) are as follows: The description of the device 100 shown in FIGS. 10(A) and 10(B) can be used as appropriate.

[0250] The display device 920 displays, for example, an image indicating whether charging is in progress or not, an image indicating the amount of stored power, etc. The display device 920 may be, for example, an electronic paper, a liquid crystal display, an electrophotographic display, or the like. For example, an electroluminescence (EL) display device can be used. By using the par, the power consumption of the display device 920 can be reduced.

[0251] 12B, the power storage unit 913 shown in FIGS. 10A and 10B may be A sensor 921 may be provided. The sensor 921 is electrically connected to the terminal 911 via a terminal 922. The sensor 921 may be provided on the back side of the label 910. The same parts as those of the device 100 shown in FIGS. 10(A) and 10(B) are shown in FIGS. The description of the device 100 shown in FIG. 10(B) can be used as appropriate.

[0252] As the sensor 921, for example, a sensor applicable to the sensor 235 can be used. Therefore, the sensor 921 may be used as the sensor 235. For example, data indicating the environment in which the device 100 is placed (such as temperature) is detected and It may also be stored in memory within path 912.

[0253] Furthermore, a structural example of the power storage unit 913 will be described with reference to FIGS.

[0254] A power storage unit 913 shown in FIG. 13A includes a terminal 951 and a terminal 952 provided inside a housing 930. The winding 950 is impregnated with an electrolyte inside the housing 930. The terminal 952 is in contact with the housing 930, and the terminal 951 is in contact with the housing by using an insulating material or the like. 13A, the housing 930 is not in contact with the housing 930. For convenience, the housing 930 is shown in a separated state. However, in reality, the winding body 950 is covered by the housing 930, and the terminals 951 and 952 are extends outside the housing 930. The housing 930 may be made of a metal material (e.g., aluminum). etc.) or a resin material can be used.

[0255] As shown in FIG. 13(B), the housing 930 shown in FIG. 13(A) is made of a plurality of materials. For example, the power storage unit 913 shown in FIG. 13B may be formed between a housing 930a and a housing 93 The area surrounded by the housing 930a and the housing 930b is where the wound body 95 0 is provided.

[0256] The housing 930a can be made of an insulating material such as organic resin. By using a material such as organic resin on the surface on which the electric field to the power storage unit 913 is formed, If the shielding of the electric field by the housing 930a is small, the inside of the housing 930 Antennas such as antenna 914 and antenna 915 may be provided in the housing 930b. For example, a metal material can be used.

[0257] Furthermore, the structure of the wound body 950 is shown in Fig. 14. The wound body 950 is made up of a negative electrode 931 and a positive electrode 932. The winding body 950 has a pole 932 and a separator 933. The negative electrode 931 and the positive electrode 932 are stacked one on top of the other, and the laminated sheet is wound to form a wound body. is.

[0258] The negative electrode 931 is connected to the terminal 911 shown in FIG. 10 via one of the terminals 951 and 952. The positive electrode 932 is connected to the terminal 91 shown in FIG. 10 via the other of the terminals 951 and 952. Connected to 1.

[0259] Furthermore, each component will be described.

[0260] An example of the negative electrode 931 will be described with reference to FIG.

[0261] As shown in FIG. 15(A), the negative electrode 931 has a negative electrode current collector 961 and a negative electrode current collector 961. a negative electrode active material layer 962 provided on one surface or one of the surfaces (both surfaces are shown in the figure); .

[0262] The negative electrode current collector 961 is made of a conductive material that does not alloy with carrier ions such as lithium. It is made of highly durable materials such as stainless steel, iron, copper, nickel, or titanium. The negative electrode current collector 961 may be in the form of a foil, a plate (sheet), a mesh, a pan, or the like. The negative electrode current collector may be in the form of a thin metal, an expanded metal, or the like. It is preferable that the thickness of 961 is 10 μm or more and 30 μm or less.

[0263] The negative electrode active material layer 962 is provided on one or both surfaces of the negative electrode current collector 961. 62 can be made of lithium metal or graphite, a carbon material commonly used in the field of energy storage. Graphite can be classified into soft carbon and hard carbon as low crystalline carbon, and highly crystalline carbon as Natural graphite, kish graphite, pyrolytic carbon, liquid crystal pitch-based carbon fiber, mesocarbon microfiber Clobeads (MCMB), liquid crystal pitch, petroleum or coal-based coke, etc. can be used. do.

[0264] In addition to the above materials, the negative electrode active material is also used for charging and discharging by alloying and dealloying reactions with carrier ions. The carrier ions are lithium-ion. When the alloy material is on, for example, Mg, Ca, Al, Si, Ge, Sn, At least one of Pb, As, Sb, Bi, Ag, Au, Zn, Cd, Hg, In, etc. Materials containing one can be used.

[0265] For example, the surface of the negative electrode active material may be coated with an oxide film of metal or silicon. By covering the surface of the active material with the oxide film, the solid electrolyte interface (Solid Electrolyte It can suppress the formation of a membrane (also called ectrolyte interphase), and The occurrence of this can be suppressed.

[0266] In this embodiment, a conductive additive and a binder are added to the above material, and the material is mixed and fired. The produced negative electrode active material layer 962 is used.

[0267] The negative electrode active material layer 962 will be described with reference to FIG. The negative electrode active material layer 962 is a cross section of a part of the negative electrode active material layer 962. 4 and a binder (not shown).

[0268] The conductive additive 974 is applied between the granular negative electrode active material 973 or between the granular negative electrode active material 973 and the negative electrode current collector 9 For example, the negative electrode active material layer 962 has a function of improving the conductivity with the conductive additive 97. It is preferable to add 4. As the conductive additive 974, a material with a large specific surface area is preferable. Acetylene black (AB) can be used. Carbon nanotubes and graphite Carbon materials such as phene and fullerene may be used as the conductive additive 974. An example using graphene will be described later.

[0269] The binder may be any binder that binds the negative electrode active material, the conductive additive, and the current collector. Examples of suitable materials include polyvinylidene fluoride (pVdF), vinylidene fluoride-hexyl Tetrafluoropropylene copolymer, vinylidene fluoride-tetrafluoroethylene copolymer Polymer, styrene-butadiene copolymer rubber, polytetrafluoroethylene, polypropylene Resin materials such as polyethylene and polyimide can be used.

[0270] The negative electrode 931 is fabricated as follows: First, the electrode material is a fluorine-containing polymer such as polyvinylidene fluoride. Mix with a solvent such as NMP (N-methylpyrrolidone) in which vinylidene fluoride polymers are dissolved. , forming a slurry.

[0271] Next, the slurry is applied to one or both surfaces of the negative electrode current collector 961 and dried. When the process is performed on both sides of the negative electrode current collector 961, the negative electrode active material layer is formed on both sides simultaneously or one side at a time. Then, the negative electrode 931 is manufactured by rolling using a roll press. do.

[0272] Next, an example in which graphene is used as a conductive additive added to the negative electrode active material layer 962 will be described with reference to FIG. 15(C) and 15(D).

[0273] In this specification, graphene refers to a single-layer graphene or a graphene having 2 to 100 layers. It includes multi-layer graphene. Single-layer graphene is a single atomic layer of carbon with π bonds. Graphene oxide is a compound obtained by oxidizing the above-mentioned graphene. When graphene is formed by reducing graphene oxide, Not all of the oxygen contained in graphene is released, and some of the oxygen remains in the graphene. If oxygen is present in the phene, the oxygen content can be determined by X-ray Photoelectron Spectroscopy (XPS). The graphene is 2 atoms thick when measured by ion spectroscopy. c% to 20 atomic %; preferably 3 atomic % to 15 atomic % The following is the result.

[0274] FIG. 15C is a plan view of a part of the negative electrode active material layer 962 using graphene. The negative electrode active material layer 962 is made of a granular negative electrode active material 973 and a plurality of granular negative electrode active material 973 coated thereon. At the same time, it is composed of graphene 975 packed inside granular negative electrode active material 973. A binder not shown may be added, but it is necessary to add a binder to bond the graphene 975 to each other. If the content is such that it functions as a binder when adhered to the substrate, it is not necessarily a binder. The negative electrode active material layer 962 in plan view is made of a plurality of negative electrode active materials 973. The surface is covered with different graphene 975. Note that in a part, the granular negative electrode active material 9 73 may be exposed.

[0275] FIG. 15D is a cross-sectional view of a part of the negative electrode active material layer 962 in FIG. and the negative electrode active material layer 962, In the cross-sectional view, the graphene 975 is The same graphene or multiple graphenes are observed as multiple particles of the negative electrode active material 9. 73, or by the same graphene or by multiple graphenes, multiple granular negative The graphene 975 has a bag-like shape, and the inside of the bag-like shape contains an electrode active material 973. In some cases, the graphene 975 contains a plurality of particles of the negative electrode active material. In some cases, the negative electrode active material particles 973 are exposed in the exposed areas.

[0276] The thickness of the negative electrode active material layer 962 is set to a desired value between 20 μm and 150 μm. It is preferable to select a thickness.

[0277] The negative electrode active material layer 962 may be pre-doped with lithium. As a method, a lithium layer may be formed on the surface of the negative electrode active material layer 962 by a sputtering method. Alternatively, by providing a lithium foil on the surface of the negative electrode active material layer 962, 2 can be pre-doped with lithium.

[0278] In addition, the volume of the granular negative electrode active material 973 expands due to the occlusion of carrier ions. As a result, the negative electrode active material layer becomes brittle during charging and discharging, and part of the negative electrode active material layer is broken off. This collapse reduces the reliability of the electricity storage device, such as the cycle characteristics.

[0279] However, even if the volume of the negative electrode active material increases or decreases due to charging and discharging, the volume of the granular negative electrode active material 973 When the surrounding area is covered with graphene 975, graphene 975 can improve the dispersion and activity of the negative electrode active material. It is possible to prevent the material layer from collapsing. In other words, graphene 975 Even if the volume of the negative electrode active material increases or decreases, the negative electrode active material has the function of maintaining the bond between the negative electrode active materials. Therefore, there is no need to use a binder when forming the negative electrode active material layer 962, and the negative electrode active material layer 962 can be formed by a constant weight (constant volume). In the negative electrode active material layer 962 (a layer of negative electrode active material), the amount of the negative electrode active material can be increased. This makes it possible to increase the charge / discharge capacity per electrode weight (electrode volume).

[0280] The graphene 975 has conductivity and is in contact with the plurality of particles of the negative electrode active material 973. That is, when the negative electrode active material layer 962 is formed, the conductive additive also functions as a conductive additive. There is no need to use an electrolytic auxiliary agent, and in the negative electrode active material layer 962 of a certain weight (certain volume), It is possible to increase the amount of active material. Therefore, the charge / discharge per electrode weight (electrode volume) The capacity can be increased.

[0281] In addition, the graphene 975 provides an efficient and sufficient electron conduction path to the negative electrode active material layer 962. Therefore, the conductivity of the negative electrode 931 can be improved.

[0282] Graphene 975 also functions as a negative electrode active material capable of absorbing and releasing carrier ions. Therefore, the charge capacity of the negative electrode 931 can be improved.

[0283] Note that the graphene may be used as a positive electrode active material.

[0284] Next, a method for forming the negative electrode active material layer 962 shown in FIGS. 15C and 15D will be described. do.

[0285] First, an electrode material and a dispersion liquid containing graphene oxide are mixed and kneaded to form a slurry.

[0286] Next, the above slurry is applied onto the negative electrode current collector 961. Next, vacuum drying is performed for a certain period of time. The solvent is removed from the slurry applied to the negative electrode current collector 961 by the roll press. The material is rolled using a machine.

[0287] After that, we investigated the electrochemical reduction of graphene oxide using electrical energy and the thermal treatment. Thermal reduction of graphene oxide to produce graphene 975. In particular, electrochemical When a reduction treatment is performed, the graphene formed by the heat treatment has a higher π bond. The increased proportion of carbon atoms allows for the formation of highly conductive graphene 975. Through the above steps, a negative electrode current collector 961 is formed on one or both surfaces thereof using graphene as a conductive additive. Thus, a negative electrode active material layer 962 can be formed, and a negative electrode 931 can be manufactured.

[0288] Next, the positive electrode 932 will be described with reference to FIG.

[0289] 16A is a cross-sectional view of the positive electrode 932. The positive electrode 932 is formed by forming a positive electrode active layer on a positive electrode current collector 981. A layer of material 982 is formed.

[0290] The positive electrode current collector 981 can be made of stainless steel, gold, platinum, zinc, iron, copper, aluminum, titanium, etc. Highly conductive materials such as metals and alloys thereof can be used. Elements that improve heat resistance, such as silicon, titanium, neodymium, scandium, and molybdenum, are added. Aluminum alloys that react with silicon to form silicide can also be used. The metal element may be a metal element that reacts with silicon to form silicide. These include zirconium, titanium, hafnium, vanadium, niobium, tantalum, and chromium. , molybdenum, tungsten, cobalt, nickel, etc. The positive electrode current collector 981 is a foil , plate (sheet), mesh, punched metal, expanded metal, etc. It can be used.

[0291] The positive electrode active material layer 982 contains a conductive additive and a binder (binding agent) in addition to the positive electrode active material. Good too.

[0292] The positive electrode active material of the positive electrode active material layer 982 is LiFeO2, LiCoO2, LiNiO2 , LiMn2O4, V2O5, Cr2O5, MnO2, and other compounds are used as materials. can be done.

[0293] Or, lithium-containing complex phosphate (general formula LiMPO4 (M is Fe(II), Mn(I) One or more of Li(II), Co(II), and Ni(II) can be used. Representative examples of O4 include LiFePO4, LiNiPO4, LiCoPO4, and LiMnP O4, LiFe a Ni b PO4, LiFe a Co b PO4, LiFe a Mn b PO4, L iNi a Co b PO4, LiNi aMn b PO4 (where a + b ≤ 1, 0 < a < 1, 0 < b <1), LiFe c Ni d Co e PO4, LiFe c Ni d Mn e PO4, LiNi c C o d Mn e PO4 (where c + d + e ≤ 1, 0 < c < 1, 0 < d < 1, 0 < e < 1), Li Fe f Ni g Co h Mn i PO4 (where f + g + h + i ≤ 1, 0 < f < 1, 0 < g < 1, 0 < h < 1, 0 < i < 1), etc., lithium compounds can be used as the active material

[0294] Or, a lithium-containing composite silicate such as the general formula Li (2-j) MSiO4 (M is one or more of Fe(II), Mn(II), Co(I I), Ni(II), 0 ≤ j ≤ 2), etc., can be used The representative examples of the general formula Li (2-j) MSiO4 include Li (2-j) FeSi O4, Li (2-j) NiSiO4, Li (2-j) CoSiO4, Li (2-j) Mn SiO4, Li (2-j) Fe k Ni l SiO4, Li (2-j) Fe k Co l SiO4 、Li (2-j) Fe k Mn l SiO4, Li (2-j) Ni k Co l SiO4, Li ( 2-j) Ni k Mn lSiO4 (where k + l is 1 or less, 0 < k < 1, 0 < l < 1), Li (2 -j) Fe m Ni n Co q SiO4, Li (2-j) Fe m Ni n Mn q SiO4, Li (2-j) Ni m Co n Mn q SiO4 (where m + n + q is 1 or less, 0 < m < 1, 0 < n < 1 , 0 < q < 1), Li (2-j) Fe r Ni s Co t Mn u SiO4 (where r + s + t + u is 1 or less, 0 < r < 1, 0 < s < 1, 0 < t < 1, 0 < u < 1), etc. can be used as materials .

[0295] In addition, when the carrier ion is an alkali metal ion other than lithium ion or an alkaline earth metal ion, in the above lithium compound, lithium-containing composite phosphate, and lithium-containing composite silicate, an alkali metal ( for example, sodium, potassium, etc.) or an alkaline earth metal (for example, calcium, strontium thium, barium, beryllium, magnesium, etc.) may be used instead of lithium.

[0296] Also, the positive electrode active material layer 982 is not limited to being formed directly on the positive electrode current collector 981. Between the positive electrode current collector 981 and the positive electrode active material layer 982, an adhesion layer for the purpose of improving the adhesion between the positive electrode current collector 981 and the positive electrode active material layer 98 2, a flattening layer for relaxing the uneven shape of the surface of the positive electrode current collector 981, a heat dissipation layer for heat dissipation, or the positive electrode current collector 981 or the positive electrode active material layer 982 response ​​A functional layer such as a stress relief layer for relieving stress may be formed using a conductive material such as metal. stomach.

[0297] 16(B) is a plan view of the positive electrode active material layer 982. The positive electrode active material 983 is a particulate material capable of absorbing and releasing positive ions. Graphene 9 covering a plurality of particles of the positive electrode active material 983 and having the positive electrode active material 983 packed therein. The surfaces of a plurality of positive electrode active materials 983 are covered with different graphenes 984. In addition, the positive electrode active material 983 may be partially exposed.

[0298] The particle size of the positive electrode active material 983 is preferably 20 nm or more and 100 nm or less. Since electrons move within 983, the particle size of the positive electrode active material 983 is preferably as small as possible.

[0299] In addition, sufficient characteristics can be obtained even if the surface of the positive electrode active material 983 is not coated with a graphite layer. However, when graphene is used together with a positive electrode active material coated with a graphite layer, This is more preferable because it allows the flow to flow.

[0300] 16(C) is a cross-sectional view of a portion of the positive electrode active material layer 982 in FIG. The positive electrode active material 983 and the graphene 984 covering the positive electrode active material 983 are included. The positive electrode active material 84 is observed as a line in the cross-sectional view. The graphene 984 is sandwiched between a plurality of graphenes 984. The envelope 984 may be bag-shaped and may enclose a plurality of positive electrode active materials 983 therein. In addition, there are cases where the positive electrode active material is not covered with graphene and is partly exposed.

[0301] The thickness of the positive electrode active material layer 982 is selected from the range of 20 μm to 100 μm. The thickness of the positive electrode active material layer 982 is adjusted appropriately so as to prevent cracks and peeling. It is preferable that:

[0302] The positive electrode active material layer 982 has a volume of acetylene that is 0.1 to 10 times the volume of graphene. Black particles and carbon particles such as carbon nanofibers with one-dimensional expansion, A known conductive additive may be included.

[0303] Depending on the material of the positive electrode active material, the volume may expand due to the absorption of ions that act as carriers. As a result, the positive electrode active material layer becomes brittle during charging and discharging, and part of the positive electrode active material layer is broken off. However, the positive electrode active material is charged, and the reliability of the power storage device is reduced. Even if the volume increases or decreases due to discharge, the graphene covers the surrounding area, so the graphene acts as a positive electrode active material. Graphene can prevent the dispersion of the positive electrode active material layer and the collapse of the positive electrode active material layer. Even if the volume of the positive electrode active material increases or decreases due to the change in the volume of the positive electrode active material, the positive electrode active material has a function of maintaining the bond between the positive electrode active material. Therefore, the reliability of the electricity storage unit can be improved.

[0304] In addition, graphene 984 is in contact with multiple positive electrode active materials and functions as a conductive additive. In addition, it has the function of retaining a positive electrode active material that can absorb and release carrier ions. Therefore, there is no need to mix a binder into the positive electrode active material layer, and the amount of positive electrode active material per positive electrode active material layer is It is possible to increase the discharge capacity of the electricity storage device.

[0305] Next, a method for manufacturing the positive electrode active material layer 982 will be described.

[0306] First, a slurry containing particulate positive electrode active material and graphene oxide is formed. After the slurry is applied onto the dielectric 981, a reduction treatment is performed by heating in a reducing atmosphere. The positive electrode active material is baked, and oxygen contained in the graphene oxide is desorbed, resulting in the graphene Note that not all of the oxygen contained in graphene oxide is released, and some of the oxygen remains in the graphene. The graphene oxide remains in the graphene. (Hereinafter referred to as thermal reduction) is not limited to reduction by chemical reaction using a reducing agent such as hydrazine. (Hereinafter referred to as chemical reduction) is applied to the electrode in the electrolyte to reduce graphene oxide. reduction using a method different from thermal reduction, such as electrochemical reduction using a Through the above steps, a positive electrode active material layer 982 is formed on a positive electrode current collector 981. As a result, the conductivity of the positive electrode active material layer 982 is increased.

[0307] Graphene oxide contains oxygen and therefore becomes negatively charged in polar solvents. The phenanthrene disperses in the polar solvent, so the positive electrode active material contained in the slurry does not aggregate. This makes it difficult for the particle size of the positive electrode active material to increase due to aggregation. This facilitates the movement of electrons within the electrode active material, thereby increasing the conductivity of the positive electrode active material layer.

[0308] A carbon layer or the like may be formed on the surface of the positive electrode active material particles.

[0309] The separator 933 may be cellulose (paper) or porous polypropylene, An insulator such as polyethylene can be used.

[0310] The negative electrode 931, the positive electrode 932, and the separator 933 are impregnated with an electrolyte solution. As the electrolyte containing lithium, a material containing carrier ions is used. When using a lithium ion battery, the electrolyte is LiClO4, LiAsF6, LiBF4, LiPF6, or Li Lithium salts such as (C2F5SO2)2N can be used.

[0311] In addition, the carrier ions are alkali metal ions other than lithium ions, alkaline earth metal ions, etc. In the case of metal ions, the electrolyte is an alkali metal ion instead of lithium in the above lithium salt. alkali metals (e.g., sodium and potassium), alkaline earth metals (e.g., calcium, Strontium, barium, beryllium, magnesium, etc.) may also be used.

[0312] In addition, a material that can transport carrier ions is used as the solvent for the electrolyte. The solvent is preferably an aprotic organic solvent. Typical examples of the aprotic organic solvent include: , ethylene carbonate (EC), propylene carbonate, dimethyl carbonate, di Ethyl carbonate (DEC), γ-butyrolactone, acetonitrile, dimethoxyethanol Examples of the solvent include toluene, tetrahydrofuran, and the like, and one or more of these can be used.

[0313] In addition, by using a polymer material that gels as a solvent for the electrolyte, safety against leakage etc. is improved. Safety is improved. In addition, it is possible to make the lithium-ion battery thinner and lighter. Representative examples of polymeric materials include silicone gel, acrylic gel, and acrylonitrile gel. , polyethylene oxide, polypropylene oxide, fluorine-based polymers, etc.

[0314] In addition, a flame-retardant and non-volatile ionic liquid (room-temperature molten salt) was used as the solvent for the electrolyte. Or by using multiple batteries, the internal temperature of the lithium-ion battery can be prevented from rising due to an internal short circuit or overcharging. Even if the temperature rises, it can prevent lithium-ion batteries from exploding or catching fire.

[0315] In addition, instead of the electrolyte solution, solid electrolytes containing inorganic materials such as sulfides and oxides, and P A solid electrolyte containing a polymer material such as EO (polyethylene oxide) can be used. When a solid electrolyte is used, the separator is not required. Since it can be integrated, there is no risk of leakage, and safety is improved dramatically.

[0316] The structure of the power storage unit 913 is not limited to that shown in FIG. An example of 913 will be described with reference to FIG.

[0317] The laminated power storage unit 913 shown in FIG. 17 includes a positive electrode current collector 991 and a positive electrode active material layer 992. a positive electrode 993 having the above structure, a separator 997, a negative electrode current collector 994, and a negative electrode active material layer 995. The battery is made by laminating a negative electrode 996 having the same, sealing the laminate in an exterior body 999, and injecting an electrolyte 998. In FIG. 17, a power storage unit 913 is formed by stacking a sheet-like positive electrode 993 and a sheet-like negative electrode 996. The figure shows a stacked structure, but to increase the battery capacity, the above stacked structure is wound, Alternatively, it is preferable to stack multiple sheets and then seal them. When the battery is laminated, it has flexibility, making it suitable for applications where flexibility is required. It is suitable for the purpose.

[0318] In the laminated electricity storage unit 913 shown in FIG. 17, a positive electrode current collector 991 and a negative electrode current collector 9 The positive electrode current collector 99 also serves as a terminal for electrical contact with the outside. 1 and a portion of the negative electrode current collector 994 are arranged so as to be exposed to the outside from the exterior body 999.

[0319] In the laminated type electricity storage unit 913, the exterior body 999 is made of, for example, polyethylene, polypropylene, or the like. Al is applied to a membrane made of a material such as propylene, polycarbonate, ionomer, or polyamide. A thin metal film with excellent flexibility, such as aluminum, stainless steel, copper, or nickel, is applied, and the metal On the thin film, an insulating synthetic resin such as polyamide resin or polyester resin is applied as the outer surface of the exterior body. A laminated film having a three-layer structure with a film can be used. This prevents the permeation of electrolyte and gas, ensures insulation, and also provides electrolyte resistance. do.

[0320] The shape is not limited to the laminate type, but may be, for example, a coin type or a square type.

[0321] Furthermore, a lithium ion capacitor may be used as the power storage unit 913.

[0322] Lithium ion capacitors are electric double layer capacitors (EDLCs). The positive electrode of the double layer capacitor (abbreviation for "double layer capacitor") is made of a lithium-ion battery using a carbon material. It is a hybrid capacitor that combines the positive and negative electrodes of a lithium-ion battery. It is an asymmetric capacitor with a different principle. The positive electrode forms an electric double layer and is charged and discharged by physical action. The negative electrode is charged and discharged by the chemical action of lithium. By using a negative electrode in which lithium has been absorbed in advance into a certain carbon material, activated carbon can be added to the conventional negative electrode. The energy density has been dramatically improved compared to the electric double layer capacitor used.

[0323] The lithium ion capacitor uses a lithium ion and an anion instead of the positive electrode active material layer. It is sufficient to use a material that can reversibly support at least one of the above. For example, activated carbon, conductive polymers, polyacenic organic semiconductors (PAS) (abbreviation for Semiconductor)

[0324] Lithium-ion capacitors have high charge / discharge efficiency, can be charged and discharged rapidly, and can be used repeatedly. It also has a long lifespan due to use.

[0325] The above-mentioned negative electrode is used as the negative electrode of such a lithium ion capacitor. A power storage device in which generation of reversible capacity is suppressed and cycle characteristics are improved can be manufactured. In addition, a power storage device with excellent high-temperature characteristics can be manufactured.

[0326] (Sixth embodiment) In this embodiment, an electric device will be described.

[0327] Here, electrical equipment refers to industrial products that contain parts that are acted upon by electrical power. This is not limited to consumer electronics and other consumer uses, but also covers a wide range of applications, including business, industrial, and military use. This category includes:

[0328] Examples of electrical devices to which the power storage device of one embodiment of the present invention can be applied include a television. Display devices such as video and monitors, lighting equipment, personal computers such as desktop and notebook computers data, word processors, DVDs (Digital Versatile Discs), etc. Image playback devices that play back still or moving images stored on any recording medium, CDs (Compact Portable or stationary audio playback devices such as t Disc players and digital audio players Equipment, portable or stationary radio receivers, tape recorders and IC recorders (voice recorders) Recording and playback equipment such as headphones, stereos, remote controllers, and Clocks such as meters and wall clocks, cordless telephone handsets, transceivers, mobile phones, car phones , portable or stationary game consoles, pedometers, calculators, personal digital assistants, electronic organizers, electronic books, Sub-translators, voice input devices such as microphones, still cameras, video cameras, and other cameras. Toys, electric shavers, electric toothbrushes, microwave ovens and other high-frequency heating devices, electric rice cookers, Washing machines, vacuum cleaners, water heaters, electric fans, hair dryers, humidifiers, dehumidifiers and air conditioners Air conditioning equipment such as dishwashers, dish dryers, clothes dryers, futon dryers, electric refrigerators, Electric freezers, electric refrigerators, DNA storage freezers, flashlights, power tools, smoke detectors, auxiliary equipment Hearing devices, cardiac pacemakers, portable X-ray machines, radiation measuring devices, electric massagers and dialysis Health and medical equipment such as emergency lights, traffic lights, gas meters, etc. Water meters and other measuring instruments, belt conveyors, elevators, escalators, vending machines, automatic Ticket vending machines, ATMs (CDs, short for Cash Dispenser), and ATM machines ATM (Automated Teller Machine), digital signage Inage (digital signage), industrial robots, wireless relay stations, mobile phone base stations, power storage systems Examples include industrial equipment such as power systems, secondary batteries for power leveling and smart grids. In addition, vehicles (transportation vehicles) that are propelled by electric motors using power from secondary batteries are also electric vehicles. The above-mentioned mobile objects include, for example, electric vehicles (EVs), Hybrid vehicles (HEVs) that combine a combustion engine and an electric motor, and plug-in hybrid vehicles (P HEVs, tracked vehicles that use these tires and wheels as tracks, agricultural machinery, and electrically assisted vehicles. Motorized bicycles including bicycles, motorcycles, electric wheelchairs, electric carts, small or large boats, Submarines, fixed-wing and rotary-wing aircraft, rockets, satellites, space probes, and planetary probes , spacecraft, etc.

[0329] The electrical equipment is powered by a power supply according to one embodiment of the present invention, which is a main power source for covering almost all of the power consumption. The electric device can be powered by a main power source or a commercial power source. An uninterruptible power supply that can supply power to electrical equipment in the event of a power outage. The power storage device according to one embodiment of the present invention can be used for the above electric device. , supplying power to electrical equipment in parallel with the supply of power to electrical equipment from the mains power supply or utility power supply The power storage device according to one embodiment of the present invention can be used as an auxiliary power source for performing the above.

[0330] As an example, a mobile terminal is shown in FIG. 18(A) and FIG. 18(B). FIG. 18A is a view of the mobile terminal as seen from the front, and FIG. 18B is a view as seen from the back.

[0331] The mobile terminal 1100 shown in FIGS. 18A and 18B includes a housing 1111 and a display unit 1112. 12, a power storage device 1113, and a power switch 1114.

[0332] A part of the display unit 1112 can be used as a touch panel area, and the displayed operation keys can be used to Data can be input by touching the screen. The entire area of ​​the display unit 1112 is a touch panel. It may also be configured to have the function of a filter.

[0333] The display unit 1112 may include, for example, an electroluminescence (EL) display module. A display module or a liquid crystal display module can be used.

[0334] The power storage device 1113 is a cassette-type battery. The number of terminals 1121 is not particularly limited. 11, the terminal 1121 is fitted into the recess of the housing 1111. 2. This allows power to be supplied from the power storage device 1113 to the circuit inside the housing 1111. After the power storage device 1113 is fitted into the recess of the housing 1111, The power storage device 1113 may be exposed. A lid may be provided on the power storage device 1113. The device 1113 is designed to be removable from the mobile terminal 1100, but in this embodiment of the present invention One embodiment of the present invention is not limited to this. The power storage device 1113 may be configured so as not to be removable. By fitting it into the recess, the degree of freedom in arranging the internal components of the mobile terminal 1100 increases, and the mobile terminal The terminal 1100 can be made smaller and thinner. 3 can be left inside the mobile terminal 1100 and power and other supplies can be exchanged. Even if the power storage device 1113 can be removed from the mobile terminal 1100, The device 1113 may be placed inside the mobile terminal 1100 and used for power exchange. stomach.

[0335] The mobile terminals shown in FIGS. 18(A) and 18(B) can store various information (still images, videos, text, etc.). functions to display images, calendars, dates, or times on the display, Touch input function for touch input operation or editing of information displayed on the display, various software It can have the function of controlling processing by (program), etc.

[0336] 19 is a block diagram of an example of a mobile terminal. The mobile terminal shown in FIG. Line communication circuit 1131, analog baseband circuit 1132, digital baseband circuit 1 133, a power storage device 1134, a power supply circuit 1135, an application processor 1136, Display controller 1141, memory 1142, display 1143, touch sensor a sensor 1149, an audio circuit (such as a speaker and a microphone) 1147, and one of the input means. It consists of 1148 keyboards and other components.

[0337] The power storage device 1134 corresponds to the power storage device 1113 shown in FIG. 18, and the other components are: Equivalent to the load.

[0338] The wireless communication circuit 1131 has a function of receiving radio waves including data, for example. The path 1131 may be, for example, an antenna.

[0339] By providing a touch sensor 1149, the display unit 114 4 can be operated.

[0340] The display 1143 includes a display unit 1144, a source driver 1145, and a gate driver 1146. The display unit 1144 is made up of a source driver 1145 and a gate driver 1146. A driver 1146 controls the operation.

[0341] The application processor 1136 is a CPU 1137, a digital signal processor (also called DSP) 1138 and an interface (also called IF) 1139.

[0342] The memory 1142 is usually composed of an SRAM or a DRAM. For example, the memory 1142 shown in FIG. By using memory, the cost per bit of memory can be reduced, The power consumption of the memory 1142 can be reduced.

[0343] Next, an example of the operation of the mobile terminal shown in FIG. 19 will be described.

[0344] First, an image is formed by receiving radio waves containing data or by the application processor 1136. The data stored in the memory 1142 is transmitted to the display controller 114 1 to the display 1143, and the image input by the display 1143 Displays the image according to the data. If there is no change in the image, it is usually 60 to 130 hours. Data is read from memory 1142 at a period equal to or less than z, and the read data is stored in the The data is sent to the play controller 1141. When the user performs an operation to rewrite the screen, Then, a new image is formed by the application processor 1136, and the image is stored in memory. During this time, the image data is periodically read out from the memory 1142. When the new image data has been stored in the memory 1142, the next image data on the display 1143 is During a frame period, data stored in the memory 1142 is read out, and the read data is The data is output to a display 1143 via a display controller 1141. The display 1143 to which the data has been input displays an image according to the input image data. The above read operation continues until the next data is stored in memory 1142. In this way, by writing and reading data to the memory 1142, The display operation is performed by the play 1143.

[0345] 20(A) and 20(B) show an example of a power tool.

[0346] The power tool shown in FIG. 20(A) includes a housing 1211, a tip tool 1212, and a trigger switch. The device has a switch 1214, a power storage device 1216, and an attachment / detachment control switch 1217. The power tool shown in FIG. 20(A) may be an electric drill. The tool may be an electric screwdriver.

[0347] The housing 1211 has a handle portion 1215 .

[0348] The tip tool 1212 may be, for example, a drill, a Phillips bit, or a flat-head bit. The tip tool 1212 can be made detachable and can be used as a drill, a plastic, or the like depending on the application. A straight bit or a minus bit may be appropriately selected and used.

[0349] In the electric power tool shown in FIG. 20(A), the power switch is turned on and the handle portion 1215 is By gripping the trigger switch 1214 and turning it on, the tip tool 1212 is operated. It can be done.

[0350] The power storage device 1216 can be attached or detached by switching the attachment / detachment control switch 1217. The power storage device 1216 has a terminal similar to that of the mobile terminal shown in FIG. By connecting the terminal to a terminal provided on the housing 1211, the power storage device 1216 is The body 1211 can be powered.

[0351] The power tool shown in FIG. 20(B) includes a housing 1221, a blade 1222, and a trigger switch. The device has a switch 1224, a power storage device 1226, and an attachment / detachment control switch 1227. The power tool shown in 20(B) may be an electric cutter.

[0352] The housing 1221 has a handle portion 1225 .

[0353] In the electric power tool shown in FIG. 20(B), the handle portion 1225 is gripped and the trigger switch 122 By turning on the switch 4, the blade 1222 rotates to perform cutting processing. can be done.

[0354] The power storage device 1226 can be attached or detached by switching the attachment / detachment control switch 1227. The power storage device 1226 has a terminal similar to that of the mobile terminal shown in FIG. By connecting the terminal to a terminal provided on the housing 1221, the power storage device 1226 is The body 1221 can be powered.

[0355] Furthermore, an example of charging the above-mentioned electrical device will be described with reference to FIG.

[0356] FIG. 21A shows an example in which the mobile terminal 1100 shown in FIG. 18 is superimposed on the power supply device 1300. It shows.

[0357] FIG. 21(B) is a diagram showing the mobile terminal from the bottom side. For example, in the case of an electromagnetic induction type, As shown in FIG. 21(B), the antenna 1311 provided in the mobile terminal 1100 and the power supply device 1300 and an antenna 1312 are electromagnetically coupled to form a power transmission transformer. This allows power to be supplied to the mobile terminal 1100.

[0358] 21(A) and 21(B), the mobile terminal 1100 is superimposed on the power supply device 1300. 22, the example in which the mobile terminal 1100 transmits the power to the power storage device 1113 is shown. Alternatively, the power storage device 1113 may be superimposed on the power feeding device 1300 by removing the power storage device 1113 .

[0359] The configuration of the power supply device 1300 is not particularly limited. The antenna 1312 is moved to overlap with the mobile terminal 1100, thereby charging. or a moving coil type in which a plurality of antennas 1312 are provided and superimposed on the mobile terminal 1100. A multi-coil system may be applied in which charging is performed by an antenna 1312 connected to the power supply.

[0360] The electrical devices that can be charged by the power supply device 1300 are not limited to those mentioned above.

[0361] 23 shows a specific configuration of the above electric device. The display device 1400 capable of supplying power includes the power storage device 14 according to one embodiment of the present invention. 04 is an example of an electrical device using the display device 1400. Specifically, the display device 1400 is a The display device includes a housing 1401, a display unit 1402, a speaker unit 1403, and a power storage device 14 The power storage device 1404 of one embodiment of the present invention is provided inside the housing 1401. The display device 1400 can be supplied with power from a commercial power source, or can be supplied with power from a storage device. It is also possible to use the power stored in the power supply device 1404. The power storage device 1404 of one embodiment of the present invention can be used continuously even when power cannot be supplied from a power source. By using it as a power source, the display device 1400 can be used.

[0362] The display unit 1402 may be a liquid crystal display device, an illuminating device having a light emitting element such as an organic EL element in each pixel, or the like. Device, electrophoretic display device, DMD (Digital Micromirror Device) ce), PDP (Plasma Display Panel), FED (Field A semiconductor display device such as a reflective LED (emission display) can be used.

[0363] In addition to TV broadcast reception, display devices are also used for personal computers and advertising displays. , including all display devices for displaying information.

[0364] In FIG. 23, a fixed lighting device that can receive power from a power supply device 1450 is shown. The device 1410 is an example of an electrical device including a power storage device 1413 of one embodiment of the present invention. Specifically, the lighting device 1410 includes a housing 1411, a light source 1412, a power storage device 1413, etc. The power storage device 1413 is supplied with power from a power feeding device 1450. In FIG. The power storage device 1413 is mounted on the ceiling 1414 on which the housing 1411 and the light source 1412 are mounted. 14, the power storage device 1413 is provided inside the housing 1411. The lighting device 1410 may be supplied with power from a commercial power source. In addition, the power stored in the power storage device 1413 can be used. Therefore, even when power cannot be supplied from a commercial power source, the power storage device 14 according to one embodiment of the present invention can be used. By using 13 as an uninterruptible power supply, the lighting device 1410 can be used.

[0365] 23 shows an example of a fixed lighting device 1410 provided on a ceiling 1414. However, in the power storage device of one embodiment of the present invention, the side wall 1415, the floor 1416, and the like are not included in the ceiling 1414. 416, and can be used in a fixed lighting device provided in a window 1417, etc., or as a tabletop lighting device. It can also be used in lighting devices of this type.

[0366] The light source 1412 may be an artificial light source that artificially obtains light using electricity. Specifically, incandescent lamps, fluorescent lamps and other discharge lamps, and light-emitting devices such as LEDs and organic EL elements The element is an example of the artificial light source.

[0367] In FIG. 23, an indoor unit 1420 and an indoor unit 1430 to which power can be supplied from a power supply device 1450 are shown. The air conditioner including the power storage device 142 according to one embodiment of the present invention and the outdoor unit 1424 is 14 is an example of an electric device using the air conditioner 1420. Specifically, the indoor unit 1420 includes a housing 1421, an air outlet, 23, the power storage device 1423 is an indoor unit 14 20, the power storage device 1423 is provided in the outdoor unit 1424. Alternatively, both the indoor unit 1420 and the outdoor unit 1424 may be provided with the power storage device 14. 23 may be provided. The air conditioner receives power from a commercial power source. Alternatively, the power stored in the power storage device 1423 can be used. When the power storage device 1423 is provided in both the indoor unit 1420 and the outdoor unit 1424, the Therefore, even when power cannot be supplied from a commercial power source, the power storage device 1 according to one embodiment of the present invention can be By using 423 as an uninterruptible power supply, it becomes possible to use an air conditioner.

[0368] In Figure 23, we take an example of a separate type air conditioner consisting of an indoor unit and an outdoor unit. Although the figure shows an integrated air conditioner that has the functions of both the indoor unit and the outdoor unit in a single housing, The power storage device of one embodiment of the present invention can also be used in the converter.

[0369] In FIG. 23, an electric refrigerator-freezer 1 that can receive power from a power supply device 1450 Reference numeral 430 denotes an example of an electrical device including a power storage device 1434 of one embodiment of the present invention. In other words, the electric refrigerator-freezer 1430 includes a housing 1431, a refrigerator compartment door 1432, a freezer compartment door 1433, and a 23, the power storage device 1434 is provided inside the housing 1431. The electric refrigerator-freezer 1430 is supplied with power from a commercial power source. Alternatively, the power stored in the power storage device 1434 can be used. Even when power cannot be supplied from a commercial power source due to the above reasons, the power storage device according to one embodiment of the present invention can be used. By using the device 1434 as an uninterruptible power supply, the electric refrigerator-freezer 1430 can be used. do.

[0370] In FIG. 23, a clock 1440 that can receive power from a power supply device 1450 is 1 illustrates an example of an electrical device including a power storage device 1441 of one embodiment of the present invention.

[0371] Among the above-mentioned electrical appliances, high-frequency heating devices such as microwave ovens and electric rice cookers Equipment requires high power for a short period of time, so it supplements the power that cannot be supplied by commercial power. By using a power storage device according to one embodiment of the present invention as an auxiliary power source for This prevents the commercial power breaker from tripping during use.

[0372] In addition, during periods when electrical equipment is not in use, especially when the total amount of power that can be supplied by the commercial power supplier is low, During times when the percentage of electricity actually used (called the electricity usage rate) is low, By storing power in the device, it is possible to prevent power usage rates from increasing outside of the above time periods. For example, in the case of an electric refrigerator-freezer 1430, when the temperature is low, the refrigerator compartment door 143 2. During the night when the freezer door 1433 is not opened or closed, the power storage device 1434 stores power. Then, as the temperature rises, the refrigerator door 1432 and the freezer door 1433 are opened and closed. By using the power storage device 1434 as an auxiliary power source during the daytime, the daytime power usage rate can be kept low.

[0373] Furthermore, an example of a moving object, which is an example of an electrical device, will be described with reference to FIG.

[0374] The power storage device described in the above embodiment can be used as a power storage device for control. The energy storage device can be charged by external power supply using plug-in technology or wireless power supply. In addition, if the moving object is an electric railway vehicle, it can be supplied with power from overhead wires or conductive rails. It can be charged.

[0375] 24(A) and 24(B) show a power supply device 1590 that can supply power. An example of an electric vehicle is shown. The electric vehicle 1580 includes a power storage device according to one embodiment of the present invention. The power storage device 1581 is supplied with power from a power supply device 1590. The power output of the power storage device 1581 is adjusted by a control circuit 1582. The control circuit 1582 includes a ROM, a RAM, a CPU, etc. (not shown). The processor 1584 controls the

[0376] The drive unit 1583 is a DC motor or an AC motor alone, or a combination of a motor and an internal combustion engine. The processing device 1584 is configured in combination with the electric vehicle 1580. (acceleration, deceleration, stopping, etc.) and driving information (uphill and downhill slopes, etc., load on the drive wheels) Based on input information (such as shipment information), the control circuit 1582 outputs a control signal. 582 is a control signal from a processing device 1584, and the electric energy supplied from the storage device 1581 is It adjusts the energy and controls the output of the drive unit 1583. When an AC motor is installed Although not shown, the inverter for converting direct current to alternating current is also built in.

[0377] The power storage device 1581 can be charged by power supply from the power supply device 1590. The power is converted into a constant DC voltage through a conversion device such as an AC / DC converter. The power storage device 1581 can be a power storage device according to one embodiment of the present invention. By incorporating this technology, it will be possible to contribute to increasing the capacity of the battery and improve convenience. can.

[0378] As the power supply device described with reference to FIGS. 20 to 24, for example, the device 2 shown in the first embodiment 00 can be applied.

[0379] The power storage device described with reference to FIGS. 20 to 24 is, for example, the device 1 shown in Embodiment 1. 00 can be applied.

[0380] Note that one power supply device 1450 can supply power to a plurality of power storage devices. The device 1450 transmits a confirmation signal to each electrical device using a radio signal, and receives a confirmation signal from the electrical device. The response signals from these devices allow power to be supplied to each device in turn. The power storage device has an anti-collision function and receives power from the power supply device 1450. Alternatively, each power storage device may be configured to respond to the received radio wave at a different timing. For example, if each power storage device has different identification data, the response is based on the identification data. Since it is possible to select the power storage device to be used, each power storage device responds at a different timing. Therefore, for example, when the power supply device 1450 has a plurality of oscillation circuits, each oscillation circuit By controlling the oscillation circuit, it is also possible to supply power to a plurality of power storage devices in turn. It is also possible to simultaneously supply power to each power storage device.

[0381] As described above, the power storage device which is one embodiment of the present invention can be applied to various electrical devices. [Example]

[0382] In this embodiment, an example of a power storage device will be described.

[0383] The power storage device according to this embodiment is a coin-type power storage device.

[0384] In the preparation of the positive electrode, LiFePO4 particles with a carbon layer formed on the surface and NMP (N-methyl- pyrrolidone) was stirred and mixed in a kneader at 2000 rpm for 3 minutes.

[0385] Next, ultrasonic vibration is applied for 3 minutes, and the mixture is stirred and mixed in a kneader at 2000 rpm for 1 minute. The process was repeated five times.

[0386] Next, graphene oxide was added to the mixture and stirred in a kneader at 2000 rpm for 2 minutes. Mixing was carried out 8 times.

[0387] Then, pVdF (Kureha Chemical Co., Ltd.) was added as a binder and the mixture was kneaded at 2000 rp The mixture was stirred and mixed at 400°C for 2 minutes once.

[0388] Furthermore, NMP was added and the mixture was stirred and mixed at 2000 rpm for 2 minutes. This was repeated until a suitable viscosity was achieved.

[0389] The compounding ratio of the LiFePO4 particles with the carbon layer, graphene oxide, and pVdF was 9 The ratio was 1.4:0.6:8 (unit: wt%).

[0390] The slurry was prepared by the above steps. The coating was applied to an aluminum foil with a thickness of 20 μm using a coating machine. The distance from the surface was 230 μm, and the coating speed was 10 mm / sec.

[0391] The sample was dried with hot air at 80°C for 40 minutes, and then pressed using a roll press. Furthermore, the mixture was heated at 170°C for 10 hours under a reduced pressure atmosphere and pressed again. A part of the electrode was punched out to fabricate a positive electrode. The temperature was set to 120°C, and pressing was performed under the condition that the thickness of the positive electrode was reduced by 20%. The thickness of the material layer is 58 μm and the electrode density is 1.82 g / cm 3 and LiFeP The O4 loading is approximately 9.7 mg / cm 2 The theoretical monopole capacity is approximately 1.6 mAh / cm 2 in be.

[0392] The LiFePO4 particles with the carbon layer formed on the surface are made using a solid phase method. The LiFePO4 particles with a carbon layer formed on the surface were prepared in a dry room environment (exposed). At a temperature of -55°C to -70°C, the raw materials were Li2CO3:FeC2O4·2H2O: The raw materials were weighed so as to give a molar ratio of NH4H2PO4 = 2:1:1.

[0393] Next, these were mixed and pulverized using a ball mill. The mill is equipped with a 500 ml zirconia pot and a 3 mm diameter, 300 g zirconia ball. A total of 150 g of the above raw materials was mixed in a mixing bowl at a rotation speed of 300 rpm for 2 hours. For the grinding, 250 ml of acetone (Kanto Chemical Co., Ltd., 0.0% of the total weight) was used as a solvent. A 0.68% aqueous solution was used.

[0394] Next, in a dry room environment, heat the sample at 50°C for at least 1 hour and 2 hours using a hot plate. Drying was carried out for the following period.

[0395] Then, in the above dry room environment, a vacuum dryer was used to dry the sample at 80°C under a vacuum of 0.1 MPa. The mixture was dried at RT for 2 hours.

[0396] Next, the mixture was baked in a muffle furnace at 350°C for 10 hours. At this time, the N2 flow rate was It is 5 l / min.

[0397] Next, 10 wt% of glucose was weighed out for the baked sample, and the baked sample and glucose The mixture was mixed and crushed using a ball mill. Mixing and grinding were carried out using the method.

[0398] Next, in the above dry room environment, use a hot plate to heat the sample at 50°C for at least 1 hour. Drying was carried out for 2 hours or less.

[0399] Then, in the above dry room environment, a vacuum dryer was used to dry the sample at 80°C under a vacuum of 0.1 MPa. It was dried for 2 hours.

[0400] Next, the mixture was fired in a muffle furnace at 600°C for 10 hours.

[0401] Thereafter, in the dry room environment, the aggregated active material particles are crushed using a ball mill. This crushing process was carried out under the same conditions as the above-mentioned mixing and crushing of the raw materials, but at a rotation speed of 20 The difference is that the rpm was 0 and the treatment time was 30 minutes.

[0402] Next, in the above dry room environment, use a hot plate to heat the sample at 50°C for at least 1 hour. Drying was carried out for 2 hours or less.

[0403] Then, in the above dry room environment, a vacuum dryer was used to dry the sample in a vacuum of 0.1 MPa for 17 minutes. Drying was carried out at 5°C for 2 hours.

[0404] By the above steps, LiFePO4 particles with a carbon layer formed on the surface were produced. The diameter of the primary particles of LiFePO4 is 50 nm or more and 300 nm or less, and the diameter of the secondary particles is , was less than 2 μm.

[0405] Graphene oxide is a material produced using the Hummers method. In the manufacturing process, graphite is mixed with KMO4 and sulfuric acid to oxidize the graphite. After washing with hydrochloric acid, the graphite is dispersed in water and partially peeled off using an ultrasonic cleaner. Thereafter, the hydrochloric acid is removed, and the water is removed using an evaporator and ethanol under reduced pressure. The obtained sample is then crushed in a dancing mill and dried. A new model was created.

[0406] The negative electrode was prepared using MCMB particles with a silicon oxide layer formed on the surface, NMP, and pVdF. The mixture was stirred and mixed for 5 minutes at 2000 rpm using a kneader. The weight ratio of pVdF was set to 10 wt % (weight percent).

[0407] Furthermore, NMP was added and the mixture was stirred and mixed at 2000 rpm for 5 minutes. This was repeated until a suitable viscosity was achieved.

[0408] The slurry was prepared by the above steps. The coating was applied to a copper foil with a thickness of 18 μm using a coating device. The spacing was set to 230 μm and the coating speed was set to 10 mm / sec.

[0409] The sample was dried with hot air at 70°C for 40 minutes, and then pressed using a roll press. The mixture was then heated at 170°C for 10 hours under reduced pressure and pressed again. The negative electrode was fabricated by punching out a part of the electrode. The temperature was 120°C and the pressing was carried out under the condition that the thickness of the positive electrode was reduced by 20%. The thickness of the active material layer was 89 μm, and the electrode density was 1.42 g / cm 3 and MCMB's The loading amount is approximately 11.4 mg / cm 2 The theoretical monopolar capacity is approximately 4.2 mAh / cm 2 is .

[0410] The MCMB particles with the silicon oxide layer formed are materials produced using the sol-gel method. To prepare MCMB particles with a silicon layer, silicon ethoxide, hydrochloric acid, and toluene were used. The mixture was stirred to prepare a Si(OEt)4 toluene solution. The silicon dioxide content of MCMB was 1 wt% (weight percent). The compounding ratio of this solution was 3.14 × 10 Si(OEt)4. ―4 mol, 1N hydrochloric acid is 2.91 x 10 ―4 mol, and toluene was 2 ml.

[0411] Next, in the dry room environment, Si(OEt)4 toluene solution was added to the powder with an average particle size of 1000 nm. 9 μm MCMB was added and stirred. After this, the solution was heated at 70°C for 3 hours in a humid environment. was held.

[0412] Next, the mixture was fired in a muffle furnace under a nitrogen atmosphere at 500°C for 3 hours.

[0413] Thereafter, the aggregated active material particles are crushed in a mortar to form the M on which the silicon oxide layer is formed. CMB particles were produced.

[0414] Furthermore, using the above positive and negative electrodes, a CR2032 type (diameter 20 mm, height 3.2 mm) A coin-type cell was fabricated. At this time, a 25 μm thick polypropylene separator was used. Pyrene was used. The electrolyte was a mixture of ethylene carbonate (EC) and diethyl carbonate. The mixture was mixed with hexafluorophosphate (DEC) in a volume ratio of 3:7, and the resulting solution was added with hexafluorophosphate. An electrolyte prepared by dissolving lithium (LiPF6) at a concentration of 1 mol / liter was used.

[0415] Furthermore, the charge / discharge capacity of the coin-type cell was evaluated. Using a Toyo System TOSCAT-3100, the ambient temperature was set to 25°C, and the charge / discharge rate was set to 0 Charging and discharging a coin cell at 0.2C (34mA / g), upper limit voltage 4.0V, lower limit voltage 2.0V An electrical test was conducted.

[0416] The results of the charge / discharge test are shown in Figure 25. In Figure 25, the horizontal axis represents capacity (mAh / g) and the vertical axis represents voltage. The number of samples for charge / discharge evaluation was three, and the results are shown by the solid line, dashed line, and Shown by dotted lines.

[0417] As can be seen from Figure 25, the maximum charge and discharge capacities of all samples were approximately 120 mAh / g. Therefore, it is possible to configure a power storage device using the above positive and negative electrodes. It was confirmed that this was the case. [Explanation of symbols]

[0418] 100 devices 110 Data 111 Electricity storage unit 113 circuits 114 Antenna 115 circuits 116 circuits 118 Antenna 119 circuits 121 circuits 131 Transistor 132 transistors 141 circuits 142 circuits 143 Load 150 transistors 170 transistors 191 circuits 192 Interface 193 circuits 194 circuits 200 equipment 211 Circuit 212 Antenna 213 circuits 214 circuits 215 circuits 221 circuits 222 circuits 223 Antenna 230 circuits 231 circuits 235 Sensors 240 External power supply 400 memory cells 411 Transistor 412 transistors 413 Capacitor 631 Transistor 632 Capacitor element 633 Transistor 634 Transistor 635 Transistor 636 Inverter 637 Capacitor 651 Memory circuit 652 Memory circuit 653 Selector 654 Selector 701 units 702 units 703 units 704 units 710 processor 711 Bus Bridge 712 memory 713 Memory Interface 715 Clock Generation Circuit 720 Controller 721 Controller 722 I / O interface 730 Power Gate Unit 731 Switch 732 Switch 740 Clock Generation Circuit 741 Crystal Oscillator Circuit 742 Oscillator 743 Crystal unit 745 Timer Circuit 746 I / O interface 750 I / O ports 751 Comparator 752 I / O interface 761 Bus Line 762 Bus Line 763 Bus Line 764 data bus lines 770 connection terminal 771 Connection terminal 772 connection terminal 773 connection terminal 774 connection terminal 775 connection terminal 776 connection terminal 780 Registers 783 registers 784 registers 785 registers 786 registers 787 Registers 801 transistors 802 transistors 803 Terminal section 811a conductive layer 811b Conductive layer 811c conductive layer 813 Oxide semiconductor layer 814 Insulating layer 815a conductive layer 815b Conductive layer 815c conductive layer 816 Insulating layer 818 Conductive layer 821 Wiring layer 822 Wiring layer 823 Wiring layer 824 wiring layer 825 wiring layer 826 wiring layer 831a wiring layer 831b Wiring layer 832a Wiring layer 832b wiring layer 833a wiring layer 833b wiring layer 834a Wiring layer 834b wiring layer 835a wiring layer 835b wiring layer 836a wiring layer 836b wiring layer 837a wiring layer 837b Wiring layer 838a Wiring layer 838b wiring layer 900 Circuit Board 910 Label 911 terminal 912 circuits 913 Electricity storage unit 914 Antenna 915 Antenna 916 layers 917 layers 918 Antenna 919 terminal 920 Display device 921 Sensor 922 terminal 930 chassis 931 negative electrode 932 Positive electrode 933 Separator 951 terminal 952 terminals 961 Negative electrode current collector 962 Negative electrode active material layer 973 Negative electrode active material 974 Conductive additives 975 Graphene 981 Positive electrode current collector 982 Positive electrode active material layer 983 Cathode active material 984 Graphene 991 Positive electrode current collector 992 Positive electrode active material layer 993 Positive electrode 994 Negative electrode current collector 995 Negative electrode active material layer 996 negative electrode 997 Separator 998 Electrolyte 999 exterior body 1100 mobile devices 1111 Case 1112 Display section 1113 Electricity storage device 1114 Power switch 1121 terminal 1122 terminal 1131 Wireless communication circuit 1132 Analog Baseband Circuit 1133 Digital Baseband Circuit 1134 Electricity storage device 1135 Power supply circuit 1136 Application Processor 1137 CPU 1141 Display Controller 1142 memory 1143 Display 1144 Display section 1145 Source Driver 1146 Gate Driver 1148 keyboard 1149 Touch Sensor 1211 Case 1212 Tip tool 1214 Trigger Switch 1215 Handle 1216 Energy storage device 1217 Detachable control switch 1221 Case 1222 Blade 1224 Trigger Switch 1225 Handle 1226 Energy storage device 1227 Detachable Control Switch 1300 Power Supply Equipment 1311 Antenna 1312 Antenna 1400 display device 1401 Case 1402 Display section 1403 Speaker section 1404 Electricity storage device 1410 Lighting equipment 1411 Case 1412 light source 1413 Electricity storage device 1414 Ceiling 1415 Side wall 1416 beds 1417 Window 1420 Indoor unit 1421 Case 1422 Ventilation vent 1423 Electricity storage device 1424 Outdoor unit 1430 Electric refrigerator-freezer 1431 Case 1432 Refrigerator door 1433 Freezer door 1434 Electricity storage device 1440 Clock 1441 Electricity storage device 1450 Power Supply Equipment 1580 Electric Vehicles 1581 Electricity storage device 1582 control circuit 1583 Drive Unit 1584 Processing Unit 1590 Power Supply Equipment

Claims

1. A power receiving circuit; A storage battery; a control circuit having a processor; the processor includes a first memory circuit and a second memory circuit; the first memory circuit has a function of retaining data during a period in which power is supplied from the power storage unit to the processor; the second memory circuit has a function of retaining data during a period when power supply from the power storage unit to the processor is stopped; the second memory circuit includes a first transistor having silicon in a channel formation region, a second transistor having an oxide semiconductor in a channel formation region, and a capacitor; a first gate electrode of the first transistor is electrically connected to a first conductive layer functioning as one of a source electrode and a drain electrode of the second transistor and to one electrode of the capacitor; an oxide semiconductor layer including a channel formation region of the second transistor is disposed above the first transistor with an insulating layer interposed therebetween; the oxide semiconductor layer contains In, the oxide semiconductor layer is provided so as not to overlap the first gate electrode in a cross-sectional view of the second transistor in a channel length direction.

2. A power receiving circuit; A storage battery; a control circuit having a processor; the processor includes a first memory circuit and a second memory circuit; the first memory circuit has a function of retaining data during a period in which power is supplied from the power storage unit to the processor; the second memory circuit has a function of retaining data during a period when power supply from the power storage unit to the processor is stopped; the second memory circuit includes a first transistor having silicon in a channel formation region, a second transistor having an oxide semiconductor in a channel formation region, and a capacitor; a first gate electrode of the first transistor is electrically connected to a first conductive layer functioning as one of a source electrode and a drain electrode of the second transistor and to one electrode of the capacitor; an oxide semiconductor layer including a channel formation region of the second transistor is disposed above the first transistor with an insulating layer interposed therebetween; the oxide semiconductor layer contains In, a second gate electrode of the second transistor is located below the oxide semiconductor layer and has a region in contact with an upper surface of the insulating layer; the first conductive layer is electrically connected to the first gate electrode via a second conductive layer having a region in contact with the upper surface of the insulating layer.

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