Oscillator
By integrating a heat insulating member between the intermediate substrate and the first package, the oscillator minimizes external heat transfer, stabilizing oscillation characteristics and maintaining the first vibration element's temperature consistency.
Patent Information
- Application Number
- JP2022025380
- Authority / Receiving Office
- JP · JP
- Patent Type
- Patents
- Current Assignee / Owner
- Filing Date
- 2022-02-22
- Publication Date
- 2026-01-21
- Estimated Expiration
- 2042-02-22
AI Technical Summary
The existing crystal oscillator design, where a metal-plated conductive path facilitates heat transfer between the base substrate and the package body, leads to ambient temperature affecting the oscillation characteristics due to external heat transfer to the crystal unit.
The oscillator incorporates a first vibration element housed in a first package, mounted on an intermediate substrate with a heater element, and a second package, with a heat insulating member provided between the intermediate substrate and the first package to minimize external heat transfer.
This configuration stabilizes the oscillation characteristics by reducing the impact of external heat, allowing the first vibration element to maintain a consistent temperature, thereby enhancing the oscillator's performance.
Smart Images

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Abstract
Description
[Technical Field]
[0001] The present invention relates to an oscillator. [Background technology]
[0002] Patent Document 1 describes a crystal oscillator in which a package containing a heater and a crystal unit is housed in a container formed by a base substrate and a cover case. In this crystal oscillator, the package is supported by a number of spacers arranged on the base substrate. [Prior art documents] [Patent documents]
[0003] [Patent Document 1] Japanese Patent Application Publication No. 2017-130861 Summary of the Invention [Problem to be solved by the invention]
[0004] However, in the crystal oscillator of Patent Document 1, a metal-plated conductive path is formed on the spacer to establish an electrical connection between the package body and the base substrate. Therefore, heat is easily transferred between the base substrate and the package body via the metal-plated conductive path formed on the spacer. Therefore, heat from outside the crystal oscillator is easily transferred to the crystal unit housed in the package body via the spacer, which poses a problem that the oscillation characteristics of the crystal oscillator are easily affected by the ambient temperature. [Means for solving the problem]
[0005] The oscillator includes a first vibration element, a first package that houses the first vibration element, an intermediate substrate on which the first package is mounted, a heater element attached to the first package or the intermediate substrate, a second package that houses the first package, and a heat insulating member provided at least either between the second package and the intermediate substrate or between the intermediate substrate and the first package. [Brief explanation of the drawings]
[0006] [Figure 1] FIG. 1 is a cross-sectional view of an oscillator according to a first embodiment. [Figure 2] FIG. 2 is a cross-sectional view of the first vibrator in FIG. [Figure 3] FIG. 2 is a cross-sectional view of the second vibrator in FIG. [Figure 4] FIG. 10 is a cross-sectional view of an oscillator according to a second embodiment. [Figure 5] FIG. 5 is a cross-sectional view of the first vibrator in FIG. 4. [Figure 6] FIG. 10 is a cross-sectional view of an oscillator according to a third embodiment. [Figure 7] FIG. 10 is a cross-sectional view of an oscillator according to a fourth embodiment. [Figure 8] FIG. 10 is a cross-sectional view of an oscillator according to a fifth embodiment. [Figure 9] FIG. 9 is a cross-sectional view of the first vibrator in FIG. 8 . [Figure 10] FIG. 10 is a cross-sectional view of an oscillator according to a sixth embodiment. [Figure 11] FIG. 11 is a cross-sectional view of an oscillator according to a seventh embodiment. [Figure 12] FIG. 13 is a cross-sectional view of an oscillator according to an eighth embodiment. [Figure 13] FIG. 13 is a cross-sectional view of the first vibrator in FIG. [Figure 14] FIG. 13 is a cross-sectional view of an oscillator according to a ninth embodiment. [Figure 15] FIG. 15 is a cross-sectional view of the first vibrator in FIG. DETAILED DESCRIPTION OF THE INVENTION
[0007] Next, embodiments of the present disclosure will be described with reference to the drawings. For ease of explanation, each figure illustrates three mutually perpendicular axes: the X axis, the Y axis, and the Z axis. The direction along the X axis is referred to as the "X direction," the direction along the Y axis as the "Y direction," and the direction along the Z axis as the "Z direction." The tip of the arrow in each axial direction is also referred to as the "plus side," and the base of the arrow is also referred to as the "minus side." For example, the Y direction refers to both the positive side of the Y direction and the negative side of the Y direction. The positive side of the Z direction is also referred to as "up," and the negative side of the Z direction is also referred to as "down." The planar view from the Z direction is also simply referred to as the "planar view."
[0008] 1. Embodiment 1 An oscillator 1 according to a first embodiment will be described with reference to FIGS.
[0009] The oscillator 1 shown in FIG. 1 is an oven-controlled crystal oscillator (OCXO). 1, the oscillator 1 includes a first vibration element 2, a first package 3 that houses the first vibration element 2, a semiconductor element 4 that serves as an intermediate substrate on which the first package 3 is mounted, a heater element 5 that heats the first vibration element 2, a second package 6 that houses the first package 3, and a heat insulating member 7 that is provided between the first package 3 and the semiconductor element 4. In this embodiment, the first vibration element 2 and the first package 3 are collectively referred to as a first vibrator 10. In this embodiment, the oscillator 1 further includes a second oscillator 81. The second oscillator 81 constitutes a part of a PLL circuit 43 (phase locked loop circuit) which will be described later.
[0010] Such an oscillator 1 heats the first vibration element 2 with the heat of the heater element 5 and maintains the first vibration element 2 at a desired temperature, thereby suppressing frequency fluctuations in the oscillation signal output from the oscillator 1 and achieving excellent oscillation characteristics.
[0011] First, the first oscillator 10 will be described. As shown in FIG. 2, the first vibrator 10 includes a first vibrating element 2 and a first package 3.
[0012] The first vibration element 2 is formed of a flat quartz crystal substrate. In this embodiment, the first vibration element 2 is formed of an SC-cut quartz crystal substrate. Excitation electrodes (not shown) are provided on the top and bottom surfaces of the first vibration element 2.
[0013] However, the configuration of the first vibration element 2 is not particularly limited. The first vibration element 2 may be formed of, for example, an AT-cut quartz crystal substrate or a BT-cut quartz crystal substrate other than an SC-cut quartz crystal substrate. The first vibration element 2 may be, for example, a vibration element in which multiple vibrating arms flexibly vibrate in an in-plane direction, or a vibration element in which multiple vibrating arms flexibly vibrate in an out-of-plane direction. The first vibration element 2 may also be, for example, a vibration element that uses a piezoelectric material other than quartz crystal. The first vibration element 2 may also be, for example, a SAW (Surface Acoustic Wave) resonator or a MEMS (Micro Electro Mechanical Systems) vibrator in which a piezoelectric element is arranged on a semiconductor substrate such as silicon.
[0014] The first package 3 has a first base substrate 12 and a first lid 13.
[0015] First base substrate 12 is box-shaped and has a recess 15. First base substrate 12 has a first surface 12A and a second surface 12B that is opposite to first surface 12A. Recess 15 opens to first surface 12A and has a shape that is recessed from first surface 12A toward second surface 12B.
[0016] The first lid 13 has a flat plate shape and includes a third surface 13A that faces the first base substrate 12, and a fourth surface 13B that is opposite the third surface 13A.
[0017] The first surface 12A of the first base substrate 12 and the third surface 13A of the first lid 13 are joined together via a sealing member (not shown) so as to close the opening of the recess 15. This hermetically seals the recess 15, and a first housing space S1 is formed in the first package 3. The first vibration element 2 is then housed in the first housing space S1.
[0018] In this embodiment, the first surface 12A is the lower surface of the first base substrate 12. The second surface 12B, which is opposite to the first surface 12A, is the upper surface of the first base substrate 12. The third surface 13A is the upper surface of the first lid 13. The fourth surface 13B is the lower surface of the first lid 13. Furthermore, by bonding the first surface 12A of the first base substrate 12 and the third surface 13A of the first lid 13 together, the second surface 12B becomes the upper surface of the first package 3, and the fourth surface 13B becomes the lower surface of the first package 3.
[0019] In this embodiment, the first base substrate 12 is made of a ceramic material such as alumina or titania, and the first lid 13 is made of a metal material such as Kovar. However, the materials of the first base substrate 12 and the first lid 13 are not particularly limited.
[0020] The first housing space S1 is airtight and in a reduced pressure state, preferably closer to a vacuum. That is, the inside of the first package 3 is reduced in pressure. This reduces the viscous resistance of the first housing space S1 and improves the vibration characteristics of the first vibrating element 2. The atmosphere of the first housing space S1 is not particularly limited.
[0021] The recess 15 is made up of a plurality of recesses. In this embodiment, the recess 15 has a recess 16 that opens to the first surface 12A of the first base substrate 12, and a recess 17 that opens to the bottom surface of the recess 16 and has a smaller opening than the recess 16. However, the configuration of the recess 15 is not particularly limited.
[0022] A plurality of internal terminals 21 are arranged on the bottom surface of the recess 16. The plurality of internal terminals 21 are electrically connected to the first vibration element 2 via a conductive joining member B1 and a conductive bonding wire W1. In detail, the internal terminals 21 are electrically connected to excitation electrodes (not shown) provided on the upper and lower surfaces of the first vibration element 2 via the joining member B1 and the bonding wire W1.
[0023] The bonding members B1 are metal bumps made of gold, copper, etc. The bonding wires W1 are metal wires made of gold, copper, etc.
[0024] Moreover, one end of the first vibration element 2 is fixed to the bottom surface of the recess 16 via a bonding member B1. In this embodiment, excitation electrodes (not shown) provided on the upper and lower surfaces of the first vibration element 2 are electrically connected to the first base substrate 12 via the bonding member B1 and bonding wires W1, respectively. Note that the method of supporting the first vibration element 2 is not limited to one-point support by the bonding member B1, and may be two-point support by two bonding members, for example.
[0025] A plurality of internal terminals 23 and a heater element 5 are arranged on the bottom surface of the recess 17.
[0026] The heater element 5 has a heat generating circuit (not shown) and a temperature sensor (not shown). The heat generating circuit functions as a heat generating unit that heats the first vibration element 2. The temperature sensor functions as a temperature detecting unit that detects the ambient temperature, in particular the temperature of the first vibration element 2.
[0027] The heater element 5 is bonded to the bottom surface of the recess 17 by a bonding member (not shown). That is, in this embodiment, the heater element 5 is attached to the first package 3, and more specifically, the heater element 5 is housed in the first package 3.
[0028] In this embodiment, the heater element 5 is housed in the first package 3, but it does not have to be housed in the first package 3. For example, the heater element 5 may be attached to the outer circumferential surface of the first package 3.
[0029] However, since the heater element 5 is housed in the first package 3, the heat of the heater element 5 can be efficiently transferred to the first vibration element 2. This allows the heater element 5 to be driven efficiently and makes it easier to maintain the temperature of the first vibration element 2 at a desired temperature. Therefore, it is preferable that the heater element 5 is housed in the first package 3.
[0030] The internal terminals 23 are electrically connected to the heater element 5 via conductive bonding wires W2.
[0031] The bonding wire W2 is a metal wire made of gold, copper, etc. The method of connecting the internal terminal 23 and the heater element 5 is not limited to wire bonding using a metal wire, and may be, for example, flip-chip bonding using a bump member.
[0032] A plurality of external terminals 25 are arranged on the second surface 12B of the first base substrate 12. The external terminals 25 are electrically connected to the internal terminals 21 and 23 via internal wiring (not shown) formed within the first base substrate 12.
[0033] Next, the second package 6 that accommodates the first package 3 will be described. As shown in FIG. 1, the second package 6 includes a second base substrate 32 and a second lid 33.
[0034] The second base substrate 32 is box-shaped. The second base substrate 32 has a recess 35 and a recess 36. The recess 35 opens to the upper surface 32A of the second base substrate 32, and has a shape that is recessed from the upper surface 32A toward the lower surface 32B. The recess 36 opens to the lower surface 32B, which is the opposite surface to the upper surface 32A, and has a shape that is recessed from the lower surface 32B toward the upper surface 32A. Therefore, the second base substrate 32 has a substantially H-shape in a vertical cross-sectional view.
[0035] A plurality of internal terminals 37 are arranged on the bottom surface of the recess 35. The internal terminals 37 are electrically connected to the semiconductor element 4 serving as a relay substrate via bonding wires W3.
[0036] A plurality of internal terminals 38 are disposed on the bottom surface of the recess 36. The plurality of internal terminals 38 are electrically connected to the second vibrator 81 via the joining member B2.
[0037] A plurality of external terminals 39 are arranged on the lower surface 32B of the second base substrate 32. The oscillator 1 is electrically connected via the external terminals 39 to an external device (not shown). The internal terminals 37, 38, and external terminals 39 are electrically connected via internal wiring (not shown) within the second base substrate 32.
[0038] Furthermore, a circuit component 40 such as a bypass capacitor is disposed on the bottom surface of the recess 36. The circuit component 40 is bonded to the bottom surface of the recess 36 by a conductive bonding member (not shown). The circuit component 40 is then electrically connected to internal wiring (not shown) within the second base substrate 32 via the conductive bonding member (not shown).
[0039] The second lid 33 has a flat plate shape and includes a lower surface 33A that faces the second base substrate 32, and an upper surface 33B that is opposite to the lower surface 33A.
[0040] The upper surface 32A of the second base substrate 32 and the lower surface 33A of the second lid 33 are joined together via a sealing member (not shown) so as to close the opening of the recess 35. This hermetically seals the recess 35, and a second housing space S2 is formed within the second package 6. The first vibrator 10 is then housed in the second housing space S2. In other words, the first package 3 is housed in the second housing space S2.
[0041] In this embodiment, the second base substrate 32 is made of a ceramic material such as alumina or titania, and the second lid 33 is made of a metal material such as Kovar. However, the materials of the second base substrate 32 and the second lid 33 are not particularly limited.
[0042] The second housing space S2 is airtight and in a reduced pressure state, preferably closer to a vacuum. In other words, the inside of the second package 6 is reduced pressure. This allows the second housing space S2 to exhibit excellent heat insulation, making it difficult for heat from outside the oscillator 1 to be transmitted to the first package 3. As a result, the first vibration element 2 is less susceptible to the effects of external heat, and the heat from the heater element 5 makes it easier to maintain the first vibration element 2 at a desired temperature. The atmosphere in the second housing space S2 is not particularly limited.
[0043] A plurality of internal terminals 37 and the semiconductor element 4 serving as an intermediate substrate are disposed on the bottom surface of the recess 35. The plurality of internal terminals 37 are electrically connected to the semiconductor element 4.
[0044] Next, the semiconductor element 4 serving as the relay substrate will be described. The semiconductor element 4 serving as an intermediate substrate is disposed between the first package 3 and the second package 6 .
[0045] The semiconductor element 4 has a flat plate shape. The semiconductor element 4 has a semiconductor substrate (not shown) and a circuit layer (not shown) formed on the semiconductor substrate. More specifically, the semiconductor element 4 is an IC (Integrated Circuit) chip.
[0046] In this embodiment, the semiconductor element 4 includes a heater control circuit 41 that controls the operation of the heater element 5, and an oscillation circuit 42 that causes the first vibration element 2 to oscillate and generates an oscillation signal.
[0047] The heater control circuit 41 is a circuit for controlling the amount of current flowing through a heat generating circuit (not shown) of the heater element 5 based on an output signal of a temperature sensor (not shown) of the heater element 5, and for maintaining a constant temperature of the first vibration element 2. For example, when the current temperature determined from the output signal of the temperature sensor is lower than a set reference temperature, the heater control circuit 41 controls so that a desired current flows through the heat generating circuit, and when the current temperature is higher than the reference temperature, no current flows through the heat generating circuit.
[0048] The oscillation circuit 42 is a circuit that outputs an excitation signal for exciting the first vibration element 2, causes the first vibration element 2 to oscillate, and generates an oscillation signal.
[0049] In this embodiment, the oscillator 1 further includes a PLL circuit (phase locked loop) 43. The semiconductor element 4 includes a part of the PLL circuit 43. The PLL circuit 43 will be described later.
[0050] In addition to the heater control circuit 41, the oscillation circuit 42, and the PLL circuit 43, the semiconductor element 4 may also include a temperature compensation circuit that corrects the vibration characteristics of the first vibration element 2 in response to temperature changes, an electrostatic protection circuit, and the like.
[0051] The semiconductor element 4 is placed on the bottom surface of the recess 35 of the second package 6. A bonding member 51 is provided between the lower surface of the semiconductor element 4 and the bottom surface of the recess 35. The semiconductor element 4 is fixed to the recess 35 via the bonding member 51. In other words, the semiconductor element 4 is fixed to the second package 6 via the bonding member 51. The bonding member 51 is not particularly limited and may be, for example, an insulating adhesive or a conductive adhesive.
[0052] A plurality of connection terminals 53 are arranged on the upper surface of the semiconductor element 4. The connection terminals 53 are electrically connected to the heater control circuit 41, the oscillation circuit 42, and the PLL circuit 43 that the semiconductor element 4 has.
[0053] Furthermore, a first vibrator 10 is disposed on the upper surface of the semiconductor element 4. In other words, a first package 3 of the first vibrator 10 is mounted on the upper surface of the semiconductor element 4 serving as an intermediate substrate.
[0054] Next, the heat insulating member 7 will be described.
[0055] The heat insulating member 7 is provided between the first package 3 and the semiconductor element 4, which serves as an intermediate substrate. More specifically, the heat insulating member 7 is provided between the upper surface of the semiconductor element 4 and the fourth surface 13B, which is the lower surface of the first package 3. The first package 3 is fixed to the semiconductor element 4 via the heat insulating member 7.
[0056] The first package 3 is connected to the second package 6 via an insulating member 7 provided between the first package 3 and the semiconductor element 4, the semiconductor element 4, and a bonding member 51 provided between the semiconductor element 4 and the second package 6.
[0057] By providing the heat insulating member 7 between the first package 3 and the semiconductor element 4, heat from outside the oscillator 1 is less likely to be transmitted to the first package 3. Therefore, the first vibration element 2 is less susceptible to the effects of external heat, and the heat from the heater element 5 makes it easier to keep the first vibration element 2 at a desired temperature.
[0058] In this embodiment, as described above, the heater element 5 is attached to the first package 3. That is, the heat insulating member 7 is located midway along the heat conduction path from the heater element 5 to the second package 6.
[0059] Since the heat insulating member 7 is located midway along the heat conduction path from the heater element 5 to the second package 6, the heat from the heater element 5 is less likely to escape to the second package 6 via the first package 3, and the heat from the heater element 5 can be efficiently conducted to the first vibration element 2. Therefore, the heater element 5 can be driven efficiently, and it becomes easier to maintain the temperature of the first vibration element 2 at a desired temperature.
[0060] The material constituting the heat insulating member 7 is not particularly limited as long as it has a sufficiently low thermal conductivity. For example, insulating resins such as polyimide resin, silicone resin, and epoxy resin can be used as the material constituting the heat insulating member 7. Furthermore, these insulating resins may contain an inorganic material with a sufficiently low thermal conductivity, such as silica, as a filler.
[0061] Furthermore, if the material constituting the heat insulating member 7 has adhesive properties, the first package 3 and the semiconductor element 4 can be fixed via the heat insulating member 7 by using the heat insulating member 7 as an adhesive. However, the material constituting the heat insulating member 7 does not have to have adhesive properties. If the heat insulating member 7 does not have adhesive properties, the first package 3 and the heat insulating member 7, and the semiconductor element 4 and the heat insulating member 7 can be fixed via a joining member such as an adhesive, respectively.
[0062] The heat insulating member 7 also has a plurality of connecting portions 61 that are spaced apart from one another. The connecting portions 61 are spaced apart from one another in the X and Y directions between the top surface of the semiconductor element 4 and the fourth surface 13B, which is the bottom surface of the first package 3. This reduces the contact area between the first package 3 and the semiconductor element 4 and the heat insulating member 7, making it difficult for heat from outside the oscillator 1 to be transferred to the first package 3 via the heat insulating member 7.
[0063] In this embodiment, the connecting portion 61 is columnar. However, there are no particular limitations on the shape of the connecting portion 61. The connecting portion 61 may be, for example, frustum-shaped.
[0064] Alternatively, the heat insulating member 7 may not have multiple connection portions 61, and may be disposed so as to spread without gaps over the entire surface in the X and Y directions between the upper surface of the semiconductor element 4 and the fourth surface 13B, which is the lower surface of the first package 3. This increases the contact area between the first package 3 and the semiconductor element 4 and the heat insulating member 7, thereby increasing the adhesive strength between the first package 3 and the semiconductor element 4. However, it is preferable that the heat insulating member 7 have multiple connection portions 61, because a smaller contact area between the first package 3 and the semiconductor element 4 and the heat insulating member 7 improves the thermal insulation between the first package 3 and the semiconductor element 4.
[0065] Next, the electrical connection between the semiconductor element 4 serving as an interposer and the second package 6, and the electrical connection between the semiconductor element 4 and the first package 3 will be described.
[0066] The multiple connection terminals 53 arranged on the upper surface of the semiconductor element 4 are connected to internal terminals 37 arranged on the bottom surface of the recess 35 in the second base substrate 32 and external terminals 25 arranged on the second surface 12B, which is the upper surface of the first vibrator 10. In detail, some of the multiple connection terminals 53 are electrically connected to the internal terminals 37 via conductive bonding wires W3. The remaining connection terminals 53, i.e., the connection terminals 53 not electrically connected to the internal terminals 37, are electrically connected to the external terminals 25 via conductive bonding wires W4. That is, the second package 6 and the semiconductor element 4 serving as an intermediate substrate are electrically connected via bonding wires W3, and the semiconductor element 4 and the first package 3 are electrically connected via bonding wires W4.
[0067] The bonding wires W3 and W4 are metal wires made of gold, copper, or the like.
[0068] Since the bonding wire W3 is a metal wire, the bonding wire W3 can serve as a heat conduction path between the second package 6 and the semiconductor element 4 serving as an interposer. Similarly, since the bonding wire W4 is a metal wire, the bonding wire W4 can serve as a heat conduction path between the semiconductor element 4 serving as an interposer and the first package 3.
[0069] However, since the bonding wires W3 and W4 are thin, linear conductive paths, they can effectively suppress heat conduction compared to the metal-plated conductive paths described in the prior art.
[0070] Therefore, by electrically connecting the semiconductor element 4 as a relay substrate and the second package 6 via the bonding wire W3, heat outside the oscillator 1 is less likely to be transferred from the second package 6 to the semiconductor element 4. In other words, heat outside the oscillator 1 is less likely to be transferred to the first package 3 via the second package 6 and the semiconductor element 4. As a result, the first vibration element 2 is less susceptible to the influence of external heat, and the heat from the heater element 5 makes it easier to maintain the first vibration element 2 at a desired temperature.
[0071] Furthermore, the semiconductor element 4 serving as a relay substrate and the first package 3 are electrically connected via the bonding wire W4, which makes it difficult for heat outside the oscillator 1 to be transmitted to the first package 3 via the second package 6 and the semiconductor element 4. This makes it difficult for the first vibration element 2 to be affected by external heat, and makes it easier to maintain the first vibration element 2 at a desired temperature using the heat from the heater element 5.
[0072] Next, the PLL circuit 43 will be described. The PLL circuit 43 is a circuit that uses an oscillation signal generated by the oscillation circuit 42 oscillating the first vibration element 2 as a reference signal and outputs an oscillation signal having a predetermined frequency synchronized with this reference signal. In this embodiment, the oscillation signal output from the PLL circuit 43 is the oscillation signal output from the oscillator 1.
[0073] The PLL circuit 43 includes an oscillation circuit 44 , a phase comparator 45 , a loop filter 47 , a frequency divider circuit 48 , and a second oscillator 81 .
[0074] The semiconductor device 4 includes a part of a PLL circuit 43. In detail, the semiconductor device 4 includes an oscillator circuit 44, a phase comparator 45, a loop filter 47, and a frequency divider circuit 48 as parts of the PLL circuit 43.
[0075] The oscillation circuit 44 and the second oscillator 81 constitute a voltage-controlled oscillator. The oscillation circuit 44 is a circuit for oscillating the second vibration element 82 of the second vibrator 81. The oscillation circuit 44 is a circuit for outputting an excitation signal for exciting the second vibration element 82, causing the second vibration element 82 to oscillate, and generating an oscillation signal.
[0076] The phase comparator 45 detects the phase difference between the oscillation signal generated by the oscillation circuit 42 oscillating the first vibration element 2 and the oscillation signal frequency-divided by the frequency divider circuit 48. The phase comparator 45 outputs the detected phase difference as an error signal. Loop filter 47 is a low-pass filter that removes high-frequency components from the error signal output from phase comparator 45. Loop filter 47 outputs the error signal from which the high-frequency components have been removed as a frequency control signal that controls a voltage-controlled oscillator formed by oscillation circuit 44 and second oscillator 81. This frequency control signal is a DC signal converted into a voltage. The voltage-controlled oscillator configured by the oscillation circuit 44 and the second oscillator 81 oscillates at a frequency according to the voltage of the frequency control signal output from the loop filter 47, and outputs an oscillation signal. The oscillation signal output from the voltage-controlled oscillator constituted by the oscillation circuit 44 and the second oscillator 81 is input to the frequency divider circuit 48. The frequency divider circuit 48 divides the frequency of the oscillation signal output from the voltage-controlled oscillator constituted by the oscillation circuit 44 and the second oscillator 81. The frequency divider circuit 48 outputs the frequency-divided oscillation signal to the phase comparator 45.
[0077] In such a PLL circuit 43, the frequency of the oscillation signal output from the voltage-controlled oscillator composed of the oscillation circuit 44 and the second oscillator 81 is a frequency calculated by multiplying the frequency of the oscillation signal generated by the oscillation circuit 42 oscillating the first oscillator element 2 by a factor corresponding to the division ratio of the divider circuit 48. That is, in such a PLL circuit 43, the oscillation frequency of the second vibration element 82 is controlled based on the oscillation signal generated by the oscillation circuit 42 causing the first vibration element 2 to oscillate.
[0078] The configuration of the PLL circuit 43 is not particularly limited. For example, the PLL circuit 43 may be a fractional division PLL circuit or an integer division PLL circuit. Furthermore, the PLL circuit 43 may include both a fractional division PLL circuit and an integer division PLL circuit.
[0079] Next, the second vibrator 81 will be described. The second oscillator 81 constitutes a part of the PLL circuit 43 as described above.
[0080] As shown in FIG. 3, the second vibrator 81 includes a second vibrating element 82 and a third package 83.
[0081] The second vibration element 82 is formed of a flat quartz crystal substrate. In this embodiment, the second vibration element 82 is formed of an AT-cut quartz crystal substrate. Excitation electrodes (not shown) are provided on the upper and lower surfaces of the second vibration element 82.
[0082] However, the configuration of the second vibrating element 82 is not particularly limited. The second vibrating element 82 may be formed of, for example, an SC-cut quartz crystal substrate or a BT-cut quartz crystal substrate other than an AT-cut quartz crystal substrate. The second vibrating element 82 may be, for example, a vibrating element in which multiple vibrating arms flexibly vibrate in an in-plane direction, or a vibrating element in which multiple vibrating arms flexibly vibrate in an out-of-plane direction. The second vibrating element 82 may also be, for example, a vibrating element that uses a piezoelectric material other than quartz crystal. The second vibrating element may also be, for example, a SAW resonator or a MEMS vibrator in which a piezoelectric element is arranged on a semiconductor substrate such as silicon.
[0083] The third package 83 includes a third base substrate 85 and a third lid 86 .
[0084] The third base substrate 85 is box-shaped and has a recess 87. The recess 87 opens to the lower surface of the third base substrate 85 and has a shape that is recessed from the lower surface of the third base substrate 85 toward the upper surface.
[0085] The third lid 86 is in the shape of a flat plate. The third lid 86 is disposed so that the upper surface of the third lid 86 faces the lower surface of the third base substrate 85.
[0086] The lower surface of the third base substrate 85 and the upper surface of the third lid 86 are joined together via a sealing member (not shown) so as to close the opening of the recess 87. This hermetically seals the recess 87, and forms a third housing space S3 within the third package 83. The second vibration element 82 is then housed in the third housing space S3.
[0087] In this embodiment, the third base substrate 85 is made of a ceramic material such as alumina or titania, and the third lid 86 is made of a metal material such as Kovar. However, the materials of the third base substrate 85 and the third lid 86 are not particularly limited.
[0088] The third housing space S3 is airtight and in a reduced pressure state, preferably closer to a vacuum. That is, the inside of the third package 83 is reduced in pressure. This reduces the viscous resistance of the third housing space S3 and improves the vibration characteristics of the second vibrating element 82. The atmosphere of the third housing space S3 is not particularly limited.
[0089] The recess 87 is made up of a plurality of recesses. In this embodiment, the recess 87 has a recess 88 that opens to the lower surface of the third base substrate 85, and a recess 89 that opens to the bottom surface of the recess 88 and has a smaller opening than the recess 88. However, the configuration of the recess 87 is not particularly limited.
[0090] A plurality of internal terminals 91 are arranged on the bottom surface of the recess 88. The plurality of internal terminals 91 are electrically connected to the second vibration element 82 via a conductive joining member B3 and a conductive bonding wire W5. In detail, the internal terminals 91 are electrically connected to excitation electrodes (not shown) provided on the upper and lower surfaces of the second vibration element 82 via the joining member B3 and the bonding wire W5.
[0091] The bonding members B3 are metal bumps made of gold, copper, etc. The bonding wires W5 are metal wires made of gold, copper, etc.
[0092] Moreover, one end of the second vibration element 82 is fixed to the bottom surface of the recess 88 via a bonding member B3. In this embodiment, excitation electrodes (not shown) provided on the upper and lower surfaces of the second vibration element 82 are electrically connected to the third base substrate 85 via the bonding member B3 and bonding wires W5, respectively. Note that the method of supporting the second vibration element 82 is not limited to one-point support by the bonding member B3, and may be two-point support by two bonding members, for example.
[0093] A plurality of external terminals 92 are arranged on the upper surface of the third base substrate 85. The external terminals 92 are electrically connected to the internal terminals 91 via internal wiring (not shown) formed within the third base substrate 85.
[0094] As shown in FIGS. 1 and 3, the external terminals 92 are electrically connected to the internal terminals 38 arranged on the bottom surface of the recess 36 of the second base substrate 32 via the bonding members B2.
[0095] Furthermore, the third package 83 that houses the second vibrating element 82 is attached to the second package 6 via a joining member B2. As described above, the heat insulating member 7 is located midway along the heat conduction path from the heater element 5 to the second package 6. Therefore, the heat of the heater element 5 is less likely to be transmitted to the second vibration element 82, and temperature fluctuations of the second vibration element 82 due to the heat of the heater element 5 are suppressed. By suppressing temperature fluctuations of the second vibration element 82, it is possible to suppress deterioration of the phase noise characteristics of the oscillation signal output from the voltage-controlled oscillator formed by the oscillation circuit 44 and the second vibrator 81.
[0096] The oscillator 1 has been described above. In this embodiment, the oscillator 1 includes the PLL circuit 43, but the PLL circuit 43 may be omitted. In the case where the PLL circuit 43 is omitted, the oscillation signal generated by the oscillation circuit 42 oscillating the first vibration element 2 becomes the oscillation signal output from the oscillator 1.
[0097] As described above, according to this embodiment, the following effects can be obtained. The oscillator 1 comprises a first vibration element 2, a first package 3 that houses the first vibration element 2, a semiconductor element 4 that serves as an intermediary substrate on which the first package 3 is mounted, a heater element 5 attached to the first package 3, a second package 6 that houses the first package 3, and a heat insulating member 7 that is provided between the semiconductor element 4 and the first package 3. This makes it difficult for heat outside the oscillator 1 to be transmitted to the first package 3. Therefore, the first vibration element 2 is less susceptible to the effects of external heat, and the heat from the heater element 5 makes it easier to maintain the first vibration element 2 at a desired temperature. In other words, the oscillation characteristics of the oscillator 1 are less susceptible to the effects of the ambient temperature, and the oscillation characteristics of the oscillator 1 are stabilized.
[0098] 2. Embodiment 2 Next, an oscillator 1a according to a second embodiment will be described with reference to FIGS. The oscillator 1a of embodiment 2 is similar to the oscillator 1 of embodiment 1 except that, instead of the semiconductor element 4, it has a first semiconductor element 101 including a heater control circuit 41 that controls the heater element 5, and a second semiconductor element 102 including an oscillation circuit 42 that oscillates the first vibration element 2 and generates an oscillation signal, the first semiconductor element 101 is used as an intermediate substrate, and the second semiconductor element 102 is housed in a first package 3. Furthermore, the first vibrator 10a of the second embodiment is similar to the first vibrator 10 of the first embodiment, except that the second semiconductor element 102 is housed in the first package 3 of the first vibrator 10a. The same components as those in the first embodiment are denoted by the same reference numerals, and the description thereof will be omitted.
[0099] 4, the oscillator 1a has a first semiconductor element 101 and a second semiconductor element 102. The first semiconductor element 101 includes a heater control circuit 41. The second semiconductor element 102 includes an oscillation circuit 42 and a temperature sensor (not shown). The temperature sensor functions as a temperature detection unit that detects the ambient temperature, particularly the temperature of the first vibration element 2.
[0100] The heater control circuit 41 is a circuit for controlling the amount of current flowing through a heat generating circuit (not shown) of the heater element 5 based on an output signal of a temperature sensor (not shown) of the second semiconductor element 102, and for maintaining a constant temperature of the first vibration element 2. For example, when the current temperature determined from the output signal of the temperature sensor is lower than a set reference temperature, the heater control circuit 41 controls so that a desired current flows through the heat generating circuit, and when the current temperature is higher than the reference temperature, no current flows through the heat generating circuit.
[0101] The first semiconductor element 101 serving as an intermediate substrate is disposed between the first package 3 and the second package 6 .
[0102] As shown in FIGS. 4 and 5, the second semiconductor element 102 is housed in the first package 3 of the first vibrator 10a.
[0103] First, the first semiconductor element 101 serving as the intermediate substrate will be described. 4, the first semiconductor element 101 has a flat plate shape. The first semiconductor element 101 has a semiconductor substrate (not shown) and a circuit layer (not shown) formed on the semiconductor substrate. More specifically, the first semiconductor element 101 is an IC chip.
[0104] In this embodiment, the oscillator 1a also includes a PLL circuit 43. The first semiconductor element 101 includes a part of the PLL circuit 43. In particular, the first semiconductor element 101 includes an oscillation circuit 44, a phase comparator 45, a loop filter 47, and a frequency divider circuit 48 as parts of the PLL circuit 43.
[0105] In addition to the heater control circuit 41 and the PLL circuit 43, the first semiconductor element 101 may also have a temperature compensation circuit that corrects the vibration characteristics of the first vibration element 2 in response to temperature changes, a static electricity protection circuit, and the like.
[0106] The first semiconductor element 101 is disposed on the bottom surface of the recess 35 of the second package 6. A bonding member 51 is provided between the lower surface of the first semiconductor element 101 and the bottom surface of the recess 35, and the first semiconductor element 101 is fixed to the recess 35 via the bonding member 51.
[0107] A plurality of connection terminals 53 are arranged on the top surface of the first semiconductor element 101.
[0108] Furthermore, a first vibrator 10a is disposed on the upper surface of the first semiconductor element 101. In other words, a first package 3 is mounted on the upper surface of the first semiconductor element 101 serving as a relay substrate.
[0109] A heat insulating member 7 is provided between the upper surface of first semiconductor element 101 and fourth surface 13B, which is the lower surface of first package 3. First package 3 is fixed to first semiconductor element 101 via heat insulating member 7.
[0110] In other words, the first package 3 is connected to the second package 6 via an insulating member 7 provided between the first package 3 and the first semiconductor element 101, the first semiconductor element 101, and a bonding member 51 provided between the first semiconductor element 101 and the second package 6.
[0111] By providing the heat insulating member 7 between the first package 3 and the first semiconductor element 101, heat from outside the oscillator 1a is less likely to be transmitted to the first package 3. Therefore, the first vibration element 2 is less susceptible to the influence of external heat, and the heat from the heater element 5 makes it easier to keep the first vibration element 2 at a desired temperature.
[0112] Next, the second semiconductor element 102 will be described. As shown in Figure 5, a plurality of internal terminals 24 and a second semiconductor element 102 including an oscillator circuit 42 that oscillates the first oscillator element 2 and generates an oscillation signal are arranged on the bottom surface of the recess 17 of the first base substrate 12 of the first oscillator 10a.
[0113] The second semiconductor element 102 is an IC chip.
[0114] The second semiconductor element 102 is bonded to the bottom surface of the recess 17 by a bonding member (not shown). That is, in this embodiment, the second semiconductor element 102 is attached to the first package 3, and more specifically, the second semiconductor element 102 is housed in the first package 3.
[0115] The internal terminals 24 are electrically connected to the second semiconductor element 102 via conductive bonding wires W6.
[0116] The bonding wires W6 are metal wires made of gold, copper, etc. The method of connecting the internal terminals 24 and the second semiconductor element 102 is not limited to wire bonding using metal wires, and may be, for example, flip-chip bonding using a bump member.
[0117] The internal terminal 24 is electrically connected to the internal terminal 21 , the internal terminal 23 , and the external terminal 25 via internal wiring (not shown) formed in the first base substrate 12 .
[0118] By housing the second semiconductor element 102 including the oscillation circuit 42 in the first package 3, the length of the wiring electrically connecting the oscillation circuit 42 and the first vibration element 2 can be made shorter than in the first embodiment. Therefore, noise is less likely to be mixed in from this wiring, and an oscillation signal with high precision can be generated.
[0119] Each part of the oscillator 1a has been described above. In this embodiment, the oscillator 1a includes the PLL circuit 43, but the PLL circuit 43 may be omitted.
[0120] As described above, according to this embodiment, the following effects can be obtained. The oscillator 1a comprises a first vibration element 2, a first package 3 that houses the first vibration element 2, a first semiconductor element 101 that serves as an intermediate substrate on which the first package 3 is mounted, a heater element 5 attached to the first package 3, a second package 6 that houses the first package 3, and a heat insulating member 7 that is provided between the first semiconductor element 101 and the first package 3. This makes it possible to obtain the same effects as in the first embodiment.
[0121] 3. Embodiment 3 Next, an oscillator 1b according to a third embodiment will be described with reference to FIG. The oscillator 1b of embodiment 3 is similar to the oscillator 1a of embodiment 2 except that, compared to the oscillator 1a of embodiment 2, a heat insulating member 7 is provided instead of the bonding member 51 provided between the first semiconductor element 101 and the second package 6, and a bonding member 111 is provided instead of the bonding member 7 provided between the first package 3 and the first semiconductor element 101. The same components as those in the second embodiment are denoted by the same reference numerals, and the description thereof will be omitted.
[0122] 6, in the oscillator 1b, a heat insulating member 7 is provided between the first semiconductor element 101 and the second package 6. In detail, the heat insulating member 7 is provided between the lower surface of the first semiconductor element 101 and the bottom surface of the recess 35 of the second base substrate 32. The first semiconductor element 101 is fixed to the second package 6 via the heat insulating member 7.
[0123] Furthermore, a bonding member 111 is provided between the upper surface of the first semiconductor element 101 and the fourth surface 13B, which is the lower surface of the first package 3. The first package 3 is fixed to the first semiconductor element 101 via the bonding member 111. There are no particular limitations on the bonding member 111, and it may be, for example, an insulating adhesive or a conductive adhesive.
[0124] The above has explained each part of the oscillator 1b. By configuring the oscillator 1b in this manner, the first package 3 is connected to the second package 6 via a bonding member 111 provided between the first package 3 and the first semiconductor element 101, and a heat insulating member 7 provided between the first semiconductor element 101 and the second package 6.
[0125] By providing the heat insulating member 7 between the first semiconductor element 101 and the second package 6, heat from outside the oscillator 1b is less likely to be transmitted to the first package 3. Therefore, the first vibration element 2 is less susceptible to the influence of external heat, and the heat from the heater element 5 makes it easier to keep the first vibration element 2 at a desired temperature.
[0126] In this embodiment, the heater element 5 is attached to the first package 3, but the heater element 5 may also be attached to the first semiconductor element 101, which serves as a relay substrate. In this embodiment, no heat insulating member 7 is provided between the first semiconductor element 101 and the first package 3, so by attaching the heater element 5 to the first semiconductor element 101, the first vibration element 2 housed in the first package 3 can be heated via the first semiconductor element 101.
[0127] As described above, according to this embodiment, the following effects can be obtained. The oscillator 1b comprises a first vibration element 2, a first package 3 that houses the first vibration element 2, a first semiconductor element 101 that serves as an intermediate substrate on which the first package 3 is mounted, a heater element 5 that is attached to the first package 3 or the first semiconductor element 101, a second package 6 that houses the first package 3, and a heat insulating member 7 that is provided between the second package 6 and the first semiconductor element 101. This makes it possible to obtain the same effects as in the first embodiment.
[0128] 4. Embodiment 4 Next, an oscillator 1c according to a fourth embodiment will be described with reference to FIG. The oscillator 1c of embodiment 4 is similar to the oscillator 1a of embodiment 2 except that a heat insulating member 7 is provided instead of the bonding member 51 provided between the first semiconductor element 101 and the second package 6. That is, in the oscillator 1c, the heat insulating member 7 is provided between the first semiconductor element 101 and the first package 3 and between the first semiconductor element 101 and the second package 6. The same components as those in the second embodiment are denoted by the same reference numerals, and the description thereof will be omitted.
[0129] 7, in the oscillator 1c, a heat insulating member 7 is provided between the first semiconductor element 101 and the first package 3, and between the first semiconductor element 101 and the second package 6. In detail, the heat insulating member 7 is provided between the upper surface of the first semiconductor element 101 and the fourth surface 13B, which is the lower surface of the first package 3, and between the lower surface of the first semiconductor element 101 and the bottom surface of the recess 35 of the second base substrate 32.
[0130] The first package 3 is fixed to the first semiconductor element 101 via a heat insulating member 7 provided between the first semiconductor element 101 and the first package 3. The first semiconductor element 101 is fixed to the second package 6 via a heat insulating member 7 provided between the first semiconductor element 101 and the second package 6.
[0131] The above has explained each part of the oscillator 1c. By configuring the oscillator 1c in this manner, the first package 3 is connected to the second package 6 via an insulating member 7 provided between the first package 3 and the first semiconductor element 101, and an insulating member 7 provided between the first semiconductor element 101 and the second package 6.
[0132] In this embodiment, similarly to the second embodiment, a heat insulating member 7 is provided between the first semiconductor element 101 and the second package 6. This makes it difficult for heat from outside the oscillator 1c to be transmitted to the first package 3. Therefore, the first vibration element 2 is less susceptible to the influence of external heat, and the heat from the heater element 5 makes it easier to maintain the first vibration element 2 at a desired temperature.
[0133] Furthermore, in this embodiment, a heat insulating member 7 is also provided between the first package 3 and the first semiconductor element 101. That is, the heat insulating member 7 is provided both between the second package 6 and the first semiconductor element 101 and between the first semiconductor element 101 and the first package 3. This makes it even more difficult for heat outside the oscillator 1c to be transmitted to the first package 3. Therefore, the first vibration element 2 is even less susceptible to the effects of external heat, and the heat from the heater element 5 makes it even easier to maintain the first vibration element 2 at a desired temperature.
[0134] As described above, according to this embodiment, the following effects can be obtained. The oscillator 1c comprises a first vibration element 2, a first package 3 that houses the first vibration element 2, a first semiconductor element 101 that serves as an intermediate substrate on which the first package 3 is mounted, a heater element 5 attached to the first package 3, a second package 6 that houses the first package 3, and a heat insulating member 7 that is provided between the second package 6 and the first semiconductor element 101, and between the first semiconductor element 101 and the first package 3. This further enhances the effects of the first embodiment, and the oscillation characteristics of the oscillator 1 become more stable.
[0135] 5. Embodiment 5 Next, an oscillator 1d according to a fifth embodiment will be described with reference to FIGS. The oscillator 1d of embodiment 5 is similar to the oscillator 1 of embodiment 1 except that, compared to the oscillator 1 of embodiment 1, the PLL circuit 43 is omitted, a wiring board 121 is provided as a relay board, a semiconductor element 124 having a heater control circuit 41 and an oscillation circuit 42 is provided between the wiring board 121 and the first package 3, the heater element 5 is fixed on the first package 3, and a heat insulating member 7 is provided between the second package 6 and the wiring board 121. The same components as those in the first embodiment are denoted by the same reference numerals, and the description thereof will be omitted.
[0136] As shown in Figure 8, the oscillator 1d includes a first vibration element 2, a first package 3 that houses the first vibration element 2, a wiring board 121 as an intermediary board on which the first package 3 is mounted, a heater element 5 that heats the first vibration element 2, a second package 6 that houses the first package 3, and a heat insulating member 7 that is provided between the second package 6 and the wiring board 121.
[0137] 8, the second base substrate 32 is box-shaped and has a recess 35 that opens to an upper surface 32A. In this embodiment, the second base substrate 32 does not have a recess 36 that opens to a lower surface 32B, but may have a recess 36.
[0138] In this embodiment, the recess 35 is made up of a plurality of recesses. Specifically, the recess 35 has a recess 35a that opens to the upper surface 32A of the second base substrate 32 and a recess 35b that opens to the bottom surface of the recess 35a and has a smaller opening than the recess 35a. However, the configuration of the recess 35 is not particularly limited.
[0139] A plurality of internal terminals 37 are arranged on the bottom surface of the recess 35a.
[0140] The wiring board 121 is disposed on the bottom surface of the recess 35b. A heat insulating member 7 is provided between the bottom surface of recess 35b and the lower surface of wiring board 121. Wiring board 121 is fixed to the bottom surface of recess 35b via heat insulating member 7. In other words, wiring board 121, which serves as a relay board, is joined and fixed to second package 6 via heat insulating member 7 provided between wiring board 121 and second package 6.
[0141] The wiring substrate 121 has an insulating substrate 122 and a conductive wiring pattern 123 formed on the upper surface of the insulating substrate 122. For example, a quartz substrate, a glass substrate, a ceramic substrate, or the like can be used as the insulating substrate 122. The wiring pattern 123 is formed by patterning gold, copper, or the like by printing or plating. The wiring pattern 123 may be formed on the lower surface of the insulating substrate 122 in addition to the upper surface. Furthermore, a through electrode may be formed to electrically connect the upper and lower surfaces of the insulating substrate 122.
[0142] In this embodiment, circuit components 40 such as bypass capacitors are disposed on the upper surface of the wiring board 121. The circuit components 40 are bonded to the upper surface of the wiring board 121 by a conductive bonding member (not shown). The circuit components 40 are then electrically connected to the wiring pattern 123 via the conductive bonding member (not shown).
[0143] The wiring pattern 123 of the wiring board 121 and the internal terminal 37 arranged on the bottom surface of the recess 35a of the second base substrate 32 are electrically connected via a bonding wire W3. That is, the wiring board 121 serving as a relay board and the second package 6 are electrically connected via the bonding wires W3.
[0144] Furthermore, a semiconductor element 124 is disposed on the upper surface of the wiring board 121 .
[0145] The semiconductor device 124 includes a heater control circuit 41 and an oscillation circuit 42 .
[0146] In addition to the heater control circuit 41 and the oscillation circuit 42, the semiconductor element 124 may also include a temperature compensation circuit that corrects the vibration characteristics of the first vibration element 2 in response to temperature changes, a static electricity protection circuit, and the like.
[0147] The semiconductor element 124 has a flat plate shape. The semiconductor element 124 has a semiconductor substrate (not shown) and a circuit layer (not shown) formed on the semiconductor substrate. Specifically, the semiconductor element 124 is an IC chip.
[0148] A plurality of connection terminals 53 are arranged on the bottom surface of the semiconductor element 124 . A conductive bonding member B7 is provided between connection terminals 53 arranged on the lower surface of semiconductor element 124 and wiring pattern 123 formed on the upper surface of wiring board 121. Semiconductor element 124 and wiring board 121 are electrically connected via bonding member B7. Furthermore, semiconductor element 124 is fixed to wiring board 121 via bonding member B7.
[0149] The bonding members B7 are metal bumps made of gold, copper, or the like.
[0150] On the upper surface of the semiconductor element 124, the first oscillator 10d is disposed.
[0151] That is, the first vibrator 10d is disposed on the upper surface of the semiconductor element 124, and the wiring board 121 serving as an intermediate board is disposed on the lower surface of the semiconductor element 124. In other words, the semiconductor element 124 is provided between the wiring board 121 serving as an intermediate board and the first package 3 of the first vibrator 10d. In yet other words, the first package 3 is mounted on the wiring board 121 serving as an intermediate board via the semiconductor element 124.
[0152] The wiring board 121 and the semiconductor element 124 arranged on the upper surface of the wiring board 121 may be collectively regarded as an intermediate board.
[0153] A bonding member 126 is provided between the upper surface of the semiconductor element 124 and the fourth surface 13B, which is the lower surface of the first package 3. The first package 3 is fixed to the semiconductor element 124 via the bonding member 126. The bonding member 126 is not particularly limited, and may be, for example, an insulating adhesive or a conductive adhesive.
[0154] External terminals 25 arranged on the second surface 12B, which is the upper surface of the first package 3, are electrically connected to wiring patterns 123 formed on the upper surface of the wiring board 121 via bonding wires W4.
[0155] As shown in FIGS. 8 and 9, the heater element 5 is attached to the first package 3 of the first vibrator 10d. However, the heater element 5 is not housed in the first package 3, but is fixed onto the first package 3. Specifically, the heater element 5 is bonded to the second surface 12B, which is the upper surface of the first package 3, via a bonding member (not shown). Note that "fixed onto the first package 3" does not necessarily mean fixed to the upper surface of the first package 3, but rather to the outer peripheral surface of the first package 3. In other words, the heater element 5 may be fixed to, for example, the side surface of the first package 3.
[0156] By disposing the heater element 5 on the first package 3, it is possible to reduce the number of parts housed in the first package 3. As a result, it is possible to reduce the size of the first package 3.
[0157] As shown in FIG. 8, the heater element 5 is electrically connected to a wiring pattern 123 of the wiring board 121 via a conductive bonding wire W8.
[0158] The bonding wire W8 is a metal wire made of gold, copper, or the like.
[0159] The above has explained each part of the oscillator 1d. By configuring the oscillator 1d in this manner, the first package 3 is connected to the second package 6 via a bonding member 126 provided between the first package 3 and the semiconductor element 124, the semiconductor element 124, a bonding member B7 provided between the semiconductor element 124 and the wiring board 121, and the wiring board 121, and a heat insulating member 7 provided between the wiring board 121 and the second package 6.
[0160] By providing the heat insulating member 7 between the wiring board 121 and the second package 6, heat from outside the oscillator 1d is less likely to be transmitted to the first package 3. Therefore, the first vibration element 2 is less susceptible to the influence of external heat, and the heat from the heater element 5 makes it easier to keep the first vibration element 2 at a desired temperature.
[0161] In this embodiment, the heater element 5 is attached to the first package 3. That is, the heat insulating member 7 is located midway along the heat conduction path from the heater element 5 to the second package 6.
[0162] Since the heat insulating member 7 is located midway along the heat conduction path from the heater element 5 to the second package 6, the heat from the heater element 5 is less likely to escape to the second package 6 via the first package 3, and the heat from the heater element 5 can be efficiently conducted to the first vibration element 2. Therefore, the heater element 5 can be driven efficiently, and it becomes easier to maintain the temperature of the first vibration element 2 at a desired temperature.
[0163] In this embodiment, the second package 6 and the wiring board 121 serving as a relay board are electrically connected via bonding wires W3.
[0164] By electrically connecting the wiring board 121, which serves as a relay board, to the second package 6 via the bonding wire W3, heat outside the oscillator 1d is less likely to be transmitted from the second package 6 to the wiring board 121. In other words, heat outside the oscillator 1d is less likely to be transmitted to the first package 3. Therefore, the first vibration element 2 is less susceptible to the influence of external heat, and the heat from the heater element 5 makes it easier to maintain the first vibration element 2 at a desired temperature.
[0165] As described above, according to this embodiment, the following effects can be obtained. The oscillator 1d comprises a first vibration element 2, a first package 3 that houses the first vibration element 2, a wiring board 121 that serves as an intermediary board on which the first package 3 is mounted, a heater element 5 attached to the first package 3, a second package 6 that houses the first package 3, and a heat insulating member 7 that is provided between the second package 6 and the wiring board 121. This makes it possible to obtain the same effects as in the first embodiment.
[0166] Although the PLL circuit 43 is omitted in this embodiment, the oscillator 1d may include the PLL circuit 43. In addition, the semiconductor element 124 may be configured, for example, as a first semiconductor element having a heater control circuit 41 and a second semiconductor element having an oscillator circuit 42, with the first semiconductor element having the heater control circuit 41 being placed between the first package 3 and the wiring board 121 serving as an intermediate board, and the second semiconductor element having the oscillator circuit 42 being housed in the first package 3.
[0167] 6. Embodiment 6 Next, an oscillator 1e according to a sixth embodiment will be described with reference to FIG. The oscillator 1e of embodiment 6 is similar to the oscillator 1d of embodiment 5 except that a heat insulating member 7 is provided instead of the bonding member 126 provided between the semiconductor element 124 and the first package 3, and a bonding member 127 is provided instead of the heat insulating member 7 provided between the wiring board 121 as a relay board and the second package 6. The same components as those in the fifth embodiment are denoted by the same reference numerals, and the description thereof will be omitted.
[0168] 10, in oscillator 1e, a heat insulating member 7 is provided between wiring board 121 serving as a relay board and first package 3. More specifically, the heat insulating member 7 is provided between first package 3 and semiconductor element 124 provided between wiring board 121 and first package 3. More specifically, the heat insulating member 7 is provided between the upper surface of semiconductor element 124 and fourth surface 13B, which is the lower surface of first package 3. First package 3 is joined and fixed to semiconductor element 124 via heat insulating member 7.
[0169] In addition, a bonding member 127 is provided between the lower surface of the wiring board 121 and the bottom surface of the recess 35b of the second package 6. The wiring board 121 is fixed to the second package 6 via the bonding member 127. There are no particular limitations on the bonding member 127, and it may be, for example, an insulating adhesive or a conductive adhesive.
[0170] Each part of the oscillator 1e has been described above. By configuring the oscillator 1e in this manner, the first package 3 is connected to the second package 6 via the heat insulating member 7 provided between the first package 3 and the semiconductor element 124, the semiconductor element 124, a bonding member B7 provided between the semiconductor element 124 and the wiring board 121, and the wiring board 121, and a bonding member 127 provided between the wiring board 121 and the second package 6.
[0171] By providing the heat insulating member 7 between the first package 3 and the semiconductor element 124, heat from outside the oscillator 1e is less likely to be transmitted to the first package 3. Therefore, the first vibration element 2 is less susceptible to the influence of external heat, and the heat from the heater element 5 makes it easier to keep the first vibration element 2 at a desired temperature.
[0172] As described above, according to this embodiment, the following effects can be obtained. The oscillator 1e includes a first vibration element 2, a first package 3 that houses the first vibration element 2, a wiring board 121 that serves as an intermediary board on which the first package 3 is mounted, a heater element 5 attached to the first package 3, a second package 6 that houses the first package 3, and a heat insulating member 7 that is provided between the wiring board 121 and the first package 3. This makes it possible to obtain the same effects as in the first embodiment.
[0173] 7. Embodiment 7 Next, an oscillator 1f according to a seventh embodiment will be described with reference to FIG. The oscillator 1f of the seventh embodiment is similar to the oscillator 1d of the fifth embodiment except that a heat insulating member 7 is provided instead of the joining member 126 provided between the semiconductor element 124 and the first package 3. That is, in the oscillator 1f, the heat insulating member 7 is provided between the semiconductor element 124 and the first package 3, and between the wiring board 121 serving as a relay board and the second package 6. The same components as those in the fifth embodiment are denoted by the same reference numerals, and the description thereof will be omitted.
[0174] 11, in the oscillator 1f, a heat insulating member 7 is provided between the semiconductor element 124 and the first package 3, and between the wiring board 121 and the second package 6. In detail, the heat insulating member 7 is provided between the upper surface of the semiconductor element 124 and the fourth surface 13B, which is the lower surface of the first package 3, and between the lower surface of the wiring board 121 and the bottom surface of the recess 35b of the second base substrate 32.
[0175] The first package 3 is fixed to the semiconductor element 124 via a heat insulating member 7 provided between the semiconductor element 124 and the first package 3. The wiring board 121 is fixed to the second package 6 via a heat insulating member 7 provided between the wiring board 121 and the second package 6.
[0176] Each part of the oscillator 1f has been described above. By configuring the oscillator 1f in this manner, the first package 3 is connected to the second package 6 via the heat insulating member 7 provided between the first package 3 and the semiconductor element 124, the semiconductor element 124, the bonding member B7 provided between the semiconductor element 124 and the wiring board 121, and the heat insulating member 7 provided between the wiring board 121 and the second package 6.
[0177] In this embodiment, similarly to the fifth embodiment, a heat insulating member 7 is provided between the wiring board 121 and the second package 6. This makes it difficult for heat from outside the oscillator 1f to be transmitted to the first package 3. Therefore, the first vibration element 2 is less susceptible to the influence of external heat, and the heat from the heater element 5 makes it easier to maintain the first vibration element 2 at a desired temperature.
[0178] Furthermore, in this embodiment, a heat insulating member 7 is also provided between the semiconductor element 124 and the first package 3. That is, the heat insulating member 7 is provided both between the semiconductor element 124 and the first package 3 and between the wiring board 121 and the second package 6. This makes it even more difficult for heat outside the oscillator 1f to be transmitted to the first package 3. Therefore, the first vibration element 2 is even less susceptible to the effects of external heat, and the heat from the heater element 5 makes it even easier to maintain the first vibration element 2 at a desired temperature.
[0179] As described above, according to this embodiment, the following effects can be obtained. The oscillator 1f comprises a first vibration element 2, a first package 3 that houses the first vibration element 2, a wiring board 121 as an intermediary board on which the first package 3 is mounted, a heater element 5 attached to the first package 3, a second package 6 that houses the first package 3, and a heat insulating member 7 provided between the second package 6 and the wiring board 121, and between the wiring board 121 and the first package 3. This further enhances the effects of the first embodiment, and further stabilizes the oscillation characteristics of the oscillator 1f.
[0180] 8. Embodiment 8 Next, an oscillator 1g according to an eighth embodiment will be described with reference to FIGS. The oscillator 1g of embodiment 8 is similar to the oscillator 1 of embodiment 1 in that, compared to the oscillator 1 of embodiment 1, the PLL circuit 43 is omitted, a wiring board 131 is provided as a relay board, instead of the semiconductor element 4, a first semiconductor element 137 including a heater control circuit 41 that controls the heater element 5, and a second semiconductor element 138 including an oscillation circuit 42 that oscillates the first vibration element 2 and generates an oscillation signal is provided, a first package 3 is attached to one side of the wiring board 131, and the first semiconductor element 137 is attached to the other side of the wiring board 131, the second semiconductor element 138 is housed in the first package 3, and a heat insulating member 7 is provided between the second package 6 and the wiring board 131. Furthermore, the first vibrator 10g of embodiment 8 is similar to the first vibrator 10 of embodiment 1, except that the first package 3 of the first vibrator 10g contains a second semiconductor element 138, and the first package 3 is arranged upside down compared to the first vibrator 10 of embodiment 1. The same components as those in the first embodiment are denoted by the same reference numerals, and the description thereof will be omitted.
[0181] As shown in Figure 12, the oscillator 1g includes a first vibration element 2, a first package 3 that houses the first vibration element 2, a wiring board 131 as an intermediary board on which the first package 3 is mounted, a heater element 5 that heats the first vibration element 2, a second package 6 that houses the first package 3, and a heat insulating member 7 that is provided between the second package 6 and the wiring board 131.
[0182] 12, the second base substrate 32 is box-shaped and has a recess 35 that opens to an upper surface 32A. In this embodiment, the second base substrate 32 does not have a recess 36 that opens to a lower surface 32B, but may have a recess 36.
[0183] In this embodiment, the recess 35 is made up of a plurality of recesses. Specifically, the recess 35 has a recess 35a that opens to the upper surface 32A of the second base substrate 32 and a recess 35b that opens to the bottom surface of the recess 35a and has a smaller opening than the recess 35a. However, the configuration of the recess 35 is not particularly limited.
[0184] A plurality of internal terminals 37 are arranged on the bottom surface of the recess 35a.
[0185] The wiring board 131 is disposed in the recess 35b. A heat insulating member 7 is provided between the bottom surface of recess 35b and the lower surface of wiring board 131. Wiring board 131 is fixed to the bottom surface of recess 35b via heat insulating member 7. In other words, wiring board 131, which serves as a relay board, is fixed to second package 6 via heat insulating member 7 provided between wiring board 131 and second package 6.
[0186] Wiring substrate 131 has insulating substrate 132, conductive wiring pattern 133 formed on the upper surface of insulating substrate 132, and conductive wiring pattern 134 formed on the lower surface of insulating substrate 132. For example, a quartz substrate, a glass substrate, or a ceramic substrate can be used as insulating substrate 132. Wiring patterns 133 and 134 are formed by patterning gold, copper, or the like by printing or plating. Wiring patterns 133 and 134 are electrically connected by a through electrode (not shown) that electrically connects the upper and lower surfaces of insulating substrate 132.
[0187] In this embodiment, circuit components 40 such as bypass capacitors are disposed on the upper surface of wiring board 131. Circuit components 40 are bonded to the upper surface of wiring board 131 by a conductive bonding member (not shown). Circuit components 40 are then electrically connected to wiring pattern 133 via the conductive bonding member (not shown).
[0188] The wiring pattern 133 of the wiring board 131 and the internal terminal 37 arranged on the bottom surface of the recess 35a of the second base substrate 32 are electrically connected via a bonding wire W3. That is, the wiring board 131 serving as a relay board and the second package 6 are electrically connected via the bonding wires W3.
[0189] Furthermore, a first vibrator 10g is disposed on the upper surface of the wiring board 131, and a first semiconductor element 137 is disposed on the lower surface of the wiring board 131.
[0190] The first semiconductor device 137 includes a heater control circuit 41 .
[0191] In addition to the heater control circuit 41, the first semiconductor element 137 may also have a temperature compensation circuit that corrects the vibration characteristics of the first vibration element 2 in response to temperature changes, a static electricity protection circuit, and the like.
[0192] The first semiconductor element 137 is an IC chip.
[0193] A plurality of connection terminals 53 are arranged on the top surface of the first semiconductor element 137. A conductive bonding member B9 is provided between connection terminals 53 arranged on the upper surface of first semiconductor element 137 and wiring pattern 134 of wiring board 131. First semiconductor element 137 and wiring board 131 are electrically connected via bonding member B9. Furthermore, first semiconductor element 137 is fixed to wiring board 131 via bonding member B9.
[0194] The bonding members B9 are metal bumps made of gold, copper, or the like.
[0195] 12 and 13, the first vibrator 10g disposed on the upper surface of the wiring substrate 131 is disposed so that the first package 3 is upside down compared to the first vibrator 10 of embodiment 1. In other words, the first vibrator 10g is disposed so that the upper surface of the first package 3 becomes the fourth surface 13B of the first lid 13, and the lower surface of the first package 3 becomes the second surface 12B of the first base substrate 12.
[0196] As shown in FIG. 13, a plurality of internal terminals 24 and a second semiconductor element 138 are disposed on the bottom surface of the recess 17 of the first base substrate 12.
[0197] The second semiconductor element 138 includes an oscillation circuit 42 that causes the first vibration element 2 to oscillate and generates an oscillation signal.
[0198] The second semiconductor element 138 is an IC chip.
[0199] The second semiconductor element 138 is bonded to the bottom surface of the recess 17 by a bonding member (not shown). That is, in this embodiment, the second semiconductor element 138 is attached to the first package 3, and more specifically, the second semiconductor element 138 is housed in the first package 3.
[0200] The internal terminals 24 are electrically connected to the second semiconductor element 138 via conductive bonding wires W6.
[0201] The bonding wires W6 are metal wires made of gold, copper, etc. The method of connecting the internal terminals 24 and the second semiconductor element 138 is not limited to wire bonding using metal wires, and may be, for example, flip-chip bonding using a bump member.
[0202] The internal terminal 24 is electrically connected to the internal terminal 21 , the internal terminal 23 , and the external terminal 25 via internal wiring (not shown) formed in the first base substrate 12 .
[0203] The heater element 5 is joined to the bottom surface of the recess 17 by a joining member (not shown). That is, in this embodiment, the heater element 5 is attached to the first package 3, and more specifically, the heater element 5 is housed in the first package 3.
[0204] As shown in FIG. 12, a first vibrator 10g is disposed on the upper surface of a wiring board 131 serving as a relay board.
[0205] A conductive bonding member B10 is provided between the wiring pattern 133 of the wiring board 131 and the external terminals 25 arranged on the second surface 12B, which is the lower surface of the first package 3. The first package 3 and the wiring board 131 are electrically connected via the bonding member B10. The first package 3 is also fixed to the wiring board 131 via the bonding member B10.
[0206] The bonding members B10 are metal bumps made of gold, copper, or the like.
[0207] Each part of the oscillator 1g has been described above. By configuring the oscillator 1g in this manner, the first package 3 is connected to the second package 6 via a bonding member B10 provided between the first package 3 and the wiring board 131, the wiring board 131, and an insulating member 7 provided between the wiring board 131 and the second package 6.
[0208] By providing the heat insulating member 7 between the wiring board 131 and the second package 6, heat from outside the oscillator 1g is less likely to be transmitted to the first package 3. Therefore, the first vibration element 2 is less susceptible to the influence of external heat, and the heat from the heater element 5 makes it easier to keep the first vibration element 2 at a desired temperature.
[0209] In this embodiment, the heater element 5 is attached to the first package 3. That is, the heat insulating member 7 is located midway along the heat conduction path from the heater element 5 to the second package 6.
[0210] Since the heat insulating member 7 is located midway along the heat conduction path from the heater element 5 to the second package 6, the heat from the heater element 5 is less likely to escape to the second package 6 via the first package 3, and the heat from the heater element 5 can be efficiently conducted to the first vibration element 2. Therefore, the heater element 5 can be driven efficiently, and it becomes easier to maintain the temperature of the first vibration element 2 at a desired temperature.
[0211] In this embodiment, the second package 6 and the wiring board 131 serving as a relay board are electrically connected via bonding wires W3.
[0212] By electrically connecting the wiring board 131 serving as a relay board to the second package 6 via the bonding wire W3, heat outside the oscillator 1g is less likely to be transmitted from the second package 6 to the wiring board 131. In other words, heat outside the oscillator 1g is less likely to be transmitted to the first package 3. Therefore, the first vibration element 2 is less susceptible to the influence of external heat, and the heat from the heater element 5 makes it easier to maintain the first vibration element 2 at a desired temperature.
[0213] As described above, according to this embodiment, the following effects can be obtained. The oscillator 1g comprises a first vibration element 2, a first package 3 that houses the first vibration element 2, a wiring board 131 that serves as an intermediary board on which the first package 3 is mounted, a heater element 5 attached to the first package 3, a second package 6 that houses the first package 3, and a heat insulating member 7 that is provided between the second package 6 and the wiring board 131. This makes it possible to obtain the same effects as in the first embodiment.
[0214] In this embodiment, the PLL circuit 43 is omitted, but the oscillator 1g may include the PLL circuit 43. Also, the second semiconductor element 138 may be omitted, and the oscillation circuit 42 may be included in the first semiconductor element 137. In addition, in this embodiment, the first vibrator 10g is placed on the upper surface of the wiring board 131 serving as an intermediate substrate, and the first semiconductor element 137 is placed on the lower surface of the wiring board 131, but it is also possible to place the first semiconductor element 137 on the upper surface of the wiring board 131 serving as an intermediate substrate, and the first vibrator 10g on the lower surface of the wiring board 131.
[0215] 9. Embodiment 9 Next, an oscillator 1h according to a ninth embodiment will be described with reference to FIGS. The oscillator 1h of the ninth embodiment is similar to the oscillator 1g of the eighth embodiment except that the heater element 5 is included in the first semiconductor element 141. That is, the oscillator 1h of embodiment 9 has a first semiconductor element 141 including a heater element 5 and a heater control circuit 41 that controls the heater element 5, and a second semiconductor element 138 including an oscillation circuit 42 that oscillates the first vibration element 2 and generates an oscillation signal. The same components as those in the eighth embodiment are denoted by the same reference numerals, and the description thereof will be omitted.
[0216] 14, a heat insulating member 7 is provided between the second package 6 and a wiring board 131 serving as a relay board. A first vibrator 10h is disposed on the upper surface of the wiring board 131, and a first semiconductor element 141 is disposed on the lower surface of the wiring board 131.
[0217] The first semiconductor element 141 includes a heater element 5 and a heater control circuit 41. That is, the first semiconductor element 141 includes a heat generating circuit (not shown) as the heater element 5, a temperature sensor (not shown), and the heater control circuit 41.
[0218] In addition to the heater element 5 and the heater control circuit 41, the first semiconductor element 141 may also have a temperature compensation circuit that corrects the vibration characteristics of the first vibration element 2 in response to temperature changes, a static electricity protection circuit, and the like.
[0219] The first semiconductor element 141 is an IC chip.
[0220] A plurality of connection terminals 53 are arranged on the top surface of the first semiconductor element 141. A conductive bonding member B9 is provided between connection terminals 53 arranged on the upper surface of first semiconductor element 141 and wiring pattern 134 formed on the lower surface of wiring board 131. First semiconductor element 141 and wiring board 131 are electrically connected via bonding member B9. Furthermore, first semiconductor element 141 is fixed to wiring board 131 via bonding member B9.
[0221] As shown in FIGS. 14 and 15, the heater element 5 is not attached to the first package 3 but is included in the first semiconductor element 141.
[0222] As shown in FIG. 14, a first vibrator 10h is disposed on the upper surface of a wiring board 131 serving as a relay board.
[0223] A conductive bonding member B10 is provided between the wiring pattern 133 formed on the upper surface of the wiring board 131 and the external terminals 25 arranged on the second surface 12B, which is the lower surface of the first package 3. The first package 3 and the wiring board 131 are electrically connected via the bonding member B10. The first package 3 is also fixed to the wiring board 131 via the bonding member B10.
[0224] The above has explained each part of the oscillator 1h. By configuring the oscillator 1h in this manner, the first package 3 is connected to the second package 6 via a bonding member B10 provided between the first package 3 and the wiring board 131, the wiring board 131, and an insulating member 7 provided between the wiring board 131 and the second package 6.
[0225] By providing the heat insulating member 7 between the wiring board 131 and the second package 6, heat from outside the oscillator 1h is less likely to be transmitted to the first package 3. Therefore, the first vibration element 2 is less susceptible to the influence of external heat, and the heat from the heater element 5 makes it easier to keep the first vibration element 2 at a desired temperature.
[0226] In this embodiment, the second package 6 and the wiring board 131 serving as a relay board are electrically connected via bonding wires W3.
[0227] The wiring board 131 serving as a relay board and the second package 6 are electrically connected via the bonding wire W3, so that heat outside the oscillator 1h is less likely to be transmitted from the second package 6 to the wiring board 131. In other words, heat outside the oscillator 1h is less likely to be transmitted to the first package 3. Therefore, the first vibration element 2 is less susceptible to the influence of external heat, and the heat from the heater element 5 makes it easier to maintain the first vibration element 2 at a desired temperature.
[0228] In this embodiment, the first semiconductor element 141 including the heater element 5 is fixed to the wiring board 131 via a bonding member B9. That is, the heater element 5 is attached to the wiring board 131, which serves as a relay board.
[0229] The heater element 5 is connected to the second package 6 via a bonding member B9 provided between the first semiconductor element 141 including the heater element 5 and the wiring board 131, and via the wiring board 131 and a heat insulating member 7 provided between the wiring board 131 and the second package 6.
[0230] In this way, the heat insulating member 7 is located in the middle of the heat conduction path from the heater element 5 to the second package 6. Because the heat insulating member 7 is located in the middle of the heat conduction path from the heater element 5 to the second package 6, the heat of the heater element 5 is less likely to escape to the second package 6, and the heat of the heater element 5 can be efficiently conducted to the first vibration element 2. Therefore, the heater element 5 can be driven efficiently, and it becomes easier to maintain the temperature of the first vibration element 2 at a desired temperature.
[0231] As described above, according to this embodiment, the following effects can be obtained. The oscillator 1h comprises a first vibration element 2, a first package 3 that houses the first vibration element 2, a wiring board 131 that serves as an intermediary board on which the first package 3 is mounted, a heater element 5 attached to the wiring board 131, a second package 6 that houses the first package 3, and a heat insulating member 7 that is provided between the second package 6 and the wiring board 131. This makes it possible to obtain the same effects as in the first embodiment.
[0232] In this embodiment, the PLL circuit 43 is omitted, but the oscillator 1h may include the PLL circuit 43. Also, the second semiconductor element 138 may be omitted, and the oscillation circuit 42 may be included in the first semiconductor element 141.
[0233] Furthermore, in this embodiment, the first vibrator 10h is disposed on the upper surface of the wiring board 131 serving as an intermediate substrate, and the first semiconductor element 141 is disposed on the lower surface of the wiring board 131, but it is also possible to dispose the first semiconductor element 141 on the upper surface of the wiring board 131 and dispose the first vibrator 10h on the lower surface of the wiring board 131. In other words, in this embodiment, the first package 3 is attached to the upper surface of the wiring board 131, and the heater element 5 is attached to the lower surface of the wiring board 131, but it is also possible to attach the heater element 5 to the upper surface of the wiring board 131 and the first package 3 to the lower surface of the wiring board 131. In other words, it is only necessary that the heater element 5 is attached to one surface of the wiring board 131 serving as an intermediate substrate, and the first package 3 is attached to the other surface that is opposite to the one surface of the wiring board 131.
[0234] The oscillator 1 and oscillators 1a to 1h have been described above. However, the present invention is not limited to this, and the configuration of each part can be replaced with any configuration having a similar function. Furthermore, other arbitrary components may be added to the present invention. Furthermore, each embodiment may be combined as appropriate.
[0235] For example, the semiconductor element 4, the first semiconductor elements 101, 137, 141, and the second semiconductor elements 102, 138 may have temperature sensors. The heater control circuit 41 may control the heater element 5 based on output signals from the temperature sensors of the semiconductor element 4, the first semiconductor elements 101, 137, 141, and the second semiconductor elements 102, 138. [Explanation of symbols]
[0236] 1, 1a to 1h... oscillator, 2... first vibrating element, 3... first package, 4... semiconductor element (intermediate board), 101... first semiconductor element (intermediate board), 121, 131... wiring board (intermediate board), 5... heater element, 6... second package, 7... heat insulating member, 61... connection portion, 41... heater control circuit, 42... oscillator circuit, 10, 10a, 10d, 10g, 10h... first vibrator, 81... second vibrator, 82... second vibrating element, 83... third package, 137, 141... first semiconductor element, 102, 138... second semiconductor element.
Claims
1. A first vibration element; a first package that accommodates the first vibration element; an intermediate substrate on which the first package is mounted; a heater element attached to the first package or the relay substrate; a second package that accommodates the first package; a heat insulating member provided at least one between the second package and the relay substrate and between the relay substrate and the first package, the relay substrate is a first semiconductor element including a heater control circuit that controls the heater element, The first package accommodates a second semiconductor element including an oscillation circuit that causes the first vibration element to oscillate and generates an oscillation signal. Oscillator.
2. the heat insulating member is located midway along a heat conduction path from the heater element to the second package; 2. The oscillator of claim 1.
3. The heat insulating member has a plurality of connection portions.
3. The oscillator according to claim 1 or 2.
4. the relay substrate and the second package are electrically connected via bonding wires; 4. The oscillator according to claim 1, wherein the oscillator comprises:
5. The heater element is housed in the first package.
5. The oscillator according to claim 1.
6. a second vibration element whose oscillation frequency is controlled based on the oscillation signal generated by the oscillation circuit; a third package that accommodates the second vibration element, the third package is attached to the second package; 6. The oscillator according to claim 1.
7. a semiconductor element is provided between the relay substrate and the first package; the heater element is fixed on the first package; the semiconductor element includes a heater control circuit that controls the heater element and an oscillation circuit that oscillates the first vibration element and generates an oscillation signal; At least one of the second package and the relay substrate and the semiconductor element and the first package is bonded by the heat insulating member.
2. The oscillator of claim 1.
8. the heater element is attached to one surface of the relay substrate, and the first package is attached to the other surface of the relay substrate; 2. The oscillator of claim 1.
9. The interior of the second package is depressurized.
9. The oscillator according to claim 1.
Citation Information
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