Display device, display module, and electronic device

Abstract

The present invention provides a high-definition display device having a photodetection function. Provided is a display device having a first pixel, a second pixel, and a third pixel, wherein each of the first pixel to the third pixel has a first subpixel, a second subpixel, and a third subpixel, the first pixel and the second pixel have a fourth subpixel in common, the third pixel has a fifth subpixel and is capable of full-color display using the first subpixel to the third subpixel, and the fourth subpixel and the fifth subpixel each have a different one among a light emitting device that emits infrared light, a first light receiving device, and a second light receiving device.

Description

[Technical Field]

[0001] One embodiment of the present invention relates to a display device, a display module, and an electronic device.

[0002] One embodiment of the present invention is not limited to the above technical field. Examples of the technical field of one embodiment of the present invention include a semiconductor device, a display device, a light-emitting device, a power storage device, a memory device, an electronic device, a lighting device, an input device (for example, a touch sensor), an input / output device (for example, a touch panel), a driving method thereof, or a manufacturing method thereof. [Background technology]

[0003] In recent years, there has been a demand for higher resolution display devices. Devices that require high resolution display devices include, for example, devices for virtual reality (VR), augmented reality (AR), substitutional reality (SR), and mixed reality (MR), and these devices have been actively developed in recent years. Display devices used in these devices are required to be compact as well as high resolution.

[0004] As a display device, for example, a light-emitting device having a light-emitting device (also called a light-emitting element) has been developed. A light-emitting device (also called an EL device or an EL element) utilizing the electroluminescence (hereinafter referred to as EL) phenomenon has features such as being easily thin and lightweight, being capable of high-speed response to input signals, and being capable of being driven by a DC constant voltage power supply, and is therefore applied to a display device.

[0005] For example, an example of a display device using an organic EL element is described in Patent Document 1. When high display quality is required, as in the display device of Patent Document 1, a display device with a high number of pixels and high resolution may be required. [Prior art documents] [Patent documents]

[0006] [Patent Document 1] International Publication No. 2019 / 220278 Summary of the Invention [Problem to be solved by the invention]

[0007] Devices for virtual reality (VR) and augmented reality (AR) require display devices with high display quality, as shown in Patent Document 1. In these cases, the display is configured to be performed in a wearable housing, such as glasses or goggles, so miniaturization and weight reduction of the display device are important factors. In a wearable housing, the size of the display device needs to be reduced to, for example, approximately 2 inches or less, or 1 inch or less.

[0008] Additionally, VR and AR devices are becoming more multifunctional through the use of sensors.

[0009] An object of one embodiment of the present invention is to provide a high-resolution display device having a highly accurate light detection function.An object of one embodiment of the present invention is to provide a high-resolution display device having a highly accurate light detection function.An object of one embodiment of the present invention is to provide a highly reliable display device having a highly accurate light detection function.

[0010] Note that the description of these problems does not preclude the existence of other problems. One embodiment of the present invention does not necessarily have to solve all of these problems. Problems other than these can be extracted from the description in the specification, drawings, and claims. [Means for solving the problem]

[0011] One embodiment of the present invention is a display device that includes a first pixel, a second pixel, and a third pixel. The first pixel to the third pixel each include a first subpixel, a second subpixel, and a third subpixel. The first pixel and the second pixel share a fourth subpixel. The third pixel includes a fifth subpixel. Full color display is possible using the first subpixel to the third subpixel. The fourth subpixel and the fifth subpixel each include one different from each other of a light-emitting device that emits infrared light, a first light-receiving device, and a second light-receiving device.

[0012] The third pixel preferably has a sixth subpixel. The sixth subpixel preferably has one of an emitting device, a first light receiving device, and a second light receiving device, which is different from the fourth and fifth subpixels. The subpixel having the first light receiving device preferably detects at least infrared light, and the subpixel having the second light receiving device preferably detects at least visible light.

[0013] The display device preferably includes a fourth pixel. The fourth pixel preferably includes a first subpixel, a second subpixel, a third subpixel, and a sixth subpixel. The sixth subpixel preferably includes one of a light-emitting device, a first light-receiving device, and a second light-receiving device, which is different from the fourth and fifth subpixels. The subpixel including the first light-receiving device preferably detects at least infrared light, and the subpixel including the second light-receiving device preferably detects at least visible light.

[0014] One embodiment of the present invention includes a first pixel, a second pixel, and a third pixel, each of which includes a first subpixel, a second subpixel, and a third subpixel. The first pixel and the second pixel share a fourth subpixel. The third pixel includes a fifth subpixel. The first subpixel includes a first light-emitting device and a first colored layer. The second subpixel includes a second light-emitting device and a second colored layer. The third subpixel includes a third light-emitting device and a third colored layer. The first light-emitting device includes a first pixel electrode, a first EL layer on the first pixel electrode, and a common electrode on the first EL layer. the first light-emitting device has a second pixel electrode, a second EL layer on the second pixel electrode, and a common electrode on the second EL layer; the third light-emitting device has a third pixel electrode, a third EL layer on the third pixel electrode, and a common electrode on the third EL layer; the first to third EL layers all have the same configuration and are separated from each other; the first to third colored layers transmit light of different colors, respectively; and the fourth and fifth sub-pixels each have one different from each other of a fourth light-emitting device that emits infrared light, a first light-receiving device, and a second light-receiving device.

[0015] The third pixel preferably has a sixth sub-pixel, the fourth sub-pixel has a second light-receiving device, the fifth sub-pixel has a fourth light-emitting device, and the sixth sub-pixel has a first light-receiving device, and the fourth sub-pixel preferably detects at least visible light and the sixth sub-pixel preferably detects at least infrared light.

[0016] The display device preferably includes a fourth pixel. The fourth pixel preferably includes a first subpixel, a second subpixel, a third subpixel, and a sixth subpixel. The fourth subpixel preferably includes a second light-receiving device, the fifth subpixel preferably includes a fourth light-emitting device, and the sixth subpixel preferably includes a first light-receiving device, and the fourth subpixel preferably detects at least visible light, and the sixth subpixel preferably detects at least infrared light. Alternatively, the fourth subpixel preferably includes a fourth light-emitting device, the fifth subpixel preferably includes a first light-receiving device, and the sixth subpixel preferably includes a second light-receiving device, and the fifth subpixel preferably detects at least infrared light, and the sixth subpixel preferably detects at least visible light.

[0017] The fourth light-emitting device has a fourth pixel electrode, a fourth EL layer on the fourth pixel electrode, and a common electrode on the fourth EL layer, and it is preferable that the first to fourth EL layers all have the same configuration and are separated from each other.

[0018] The number of first pixels and the number of third pixels may be the same, or the number of first pixels may be half or less of the number of third pixels.

[0019] One aspect of the present invention is a display module having a display device having any of the above configurations, and including a connector such as a flexible printed circuit (hereinafter referred to as FPC) or a TCP (Tape Carrier Package), or a display module having an integrated circuit (IC) mounted thereon by a COG (Chip On Glass) method or a COF (Chip On Film) method.

[0020] One embodiment of the present invention is an electronic device including the above-described display module and at least one of a housing, a battery, a camera, a speaker, and a microphone. [Effects of the Invention]

[0021] According to one embodiment of the present invention, a high-resolution display device having a highly accurate light detection function can be provided. According to one embodiment of the present invention, a high-resolution display device having a highly accurate light detection function can be provided. According to one embodiment of the present invention, a highly reliable display device having a highly accurate light detection function can be provided.

[0022] Note that the description of these effects does not preclude the existence of other effects. One embodiment of the present invention does not necessarily have all of these effects. Effects other than these can be extracted from the description in the specification, drawings, and claims. [Brief explanation of the drawings]

[0023] 1A and 1B are top views showing an example of a display device. 2A and 2B are top views showing an example of a display device. 3A and 3B are top views showing an example of a display device. 4A to 4G are top views showing an example of a pixel. 5A to 5C are cross-sectional views showing an example of a display device. 6A and 6B are cross-sectional views showing an example of a display device. 7A to 7C are cross-sectional views showing an example of a display device. 8A to 8C are cross-sectional views showing an example of a display device. 9A to 9C are cross-sectional views showing an example of a display device. 10A to 10C are cross-sectional views showing an example of a display device. 11A and 11B are cross-sectional views showing an example of a display device. 12A to 12C are cross-sectional views showing an example of a display device. 13A to 13C are cross-sectional views showing an example of a display device. 14A to 14D are cross-sectional views showing an example of a method for manufacturing a display device. 15A to 15C are cross-sectional views showing an example of a method for manufacturing a display device. 16A to 16C are cross-sectional views showing an example of a method for manufacturing a display device. 17A and 17B are perspective views showing an example of a display device. FIG. 18 is a cross-sectional view showing an example of a display device. FIG. 19 is a cross-sectional view showing an example of a display device. FIG. 20 is a cross-sectional view showing an example of a display device. FIG. 21 is a cross-sectional view showing an example of a display device. FIG. 22 is a cross-sectional view showing an example of a display device. FIG. 23 is a cross-sectional view showing an example of a display device. FIG. 24 is a perspective view showing an example of a display device. Fig. 25A is a cross-sectional view showing an example of a display device, Fig. 25B and Fig. 25C are cross-sectional views showing an example of a transistor. 26A to 26D are cross-sectional views showing an example of a display device. 27A to 27F are diagrams showing configuration examples of a light-emitting device. 28A and 28B are diagrams showing configuration examples of a light receiving device, and Fig. 28C to Fig. 28E are diagrams showing configuration examples of a display device. 29A to 29D are diagrams showing an example of an electronic device. 30A to 30F are diagrams showing an example of an electronic device. 31A to 31G are diagrams showing an example of an electronic device. DETAILED DESCRIPTION OF THE INVENTION

[0024] The embodiments will be described in detail with reference to the drawings. However, the present invention is not limited to the following description, and it will be readily understood by those skilled in the art that various changes can be made in form and detail without departing from the spirit and scope of the present invention. Therefore, the present invention should not be interpreted as being limited to the description of the embodiments shown below.

[0025] In the configuration of the invention described below, the same parts or parts having similar functions are denoted by the same reference numerals in different drawings, and repeated explanations thereof will be omitted. Furthermore, when referring to similar functions, the same hatching pattern may be used and no particular reference numeral may be assigned.

[0026] Furthermore, for ease of understanding, the position, size, range, etc. of each component shown in the drawings may not represent the actual position, size, range, etc. Therefore, the disclosed invention is not necessarily limited to the position, size, range, etc. disclosed in the drawings.

[0027] The terms "film" and "layer" can be interchangeable depending on the circumstances. For example, the term "conductive layer" can be changed to the term "conductive film." Or, for example, the term "insulating film" can be changed to the term "insulating layer."

[0028] In this specification, etc., a device fabricated using a metal mask or FMM (fine metal mask, high-resolution metal mask) may be referred to as a device with an MM (metal mask) structure. Also, in this specification, etc., a device fabricated without using a metal mask or FMM may be referred to as a device with an MML (metal maskless) structure.

[0029] In this specification, a structure in which light-emitting layers are created separately for light-emitting devices with different emission wavelengths is sometimes referred to as an SBS (Side By Side) structure. The SBS structure allows the materials and configuration to be optimized for each light-emitting device, increasing the freedom in material and configuration selection and facilitating improvements in brightness and reliability.

[0030] In this specification and the like, holes or electrons may be referred to as "carriers." Specifically, a hole injection layer or an electron injection layer may be referred to as a "carrier injection layer," a hole transport layer or an electron transport layer may be referred to as a "carrier transport layer," and a hole block layer or an electron block layer may be referred to as a "carrier block layer." Note that the above-mentioned carrier injection layer, carrier transport layer, and carrier block layer may not be clearly distinguishable from each other depending on their cross-sectional shapes or characteristics. Furthermore, one layer may have two or three functions among the carrier injection layer, carrier transport layer, and carrier block layer.

[0031] In this specification and the like, a light-emitting device has an EL layer between a pair of electrodes. The EL layer has at least a light-emitting layer. A light-receiving device has at least an active layer that functions as a photoelectric conversion layer between the pair of electrodes. In this specification and the like, one of the pair of electrodes may be referred to as a pixel electrode, and the other as a common electrode.

[0032] (Embodiment 1) In this embodiment, a display device of one embodiment of the present invention will be described with reference to FIGS.

[0033] A display device according to one embodiment of the present invention includes a first pixel, a second pixel, and a third pixel. The first pixel, the second pixel, and the third pixel each include a first subpixel, a second subpixel, and a third subpixel. The first pixel and the second pixel share a fourth subpixel. The third pixel includes a fifth subpixel. Full-color display is possible using the first subpixel, the second subpixel, and the fourth subpixel and the fifth subpixel each include one different from the other of a light-emitting device (also referred to as a light-emitting element) that emits infrared light, a first light-receiving device (also referred to as a light-receiving element), and a second light-receiving device.

[0034] The third pixel preferably further includes a sixth subpixel, which may be one of the light-emitting device, the first light-receiving device, and the second light-receiving device, which is different from the fourth and fifth subpixels.

[0035] The display device of one embodiment of the present invention preferably further includes a fourth pixel. The fourth pixel includes a first subpixel, a second subpixel, a third subpixel, and a sixth subpixel.

[0036] The subpixel having the first light-receiving device preferably detects at least infrared light. Specifically, the subpixel preferably detects light emission from a light-emitting device that emits infrared light and is included in the display device of one embodiment of the present invention.

[0037] The subpixel having the second light receiving device preferably detects at least visible light, specifically, light in at least a part of the wavelength range of light emitted by the first to third subpixels.

[0038] A display device according to one embodiment of the present invention includes a light-emitting device and a light-receiving device in a pixel. In the display device according to one embodiment of the present invention, the display portion has a light-receiving function, and thus an image can be captured using the display portion. For example, the display portion can capture an image while displaying an image. Furthermore, in the display portion, some subpixels can emit light as a light source, and other subpixels can display an image.

[0039] For example, the first to third sub-pixels may be combined to emit red (R), green (G), and blue (B) light, respectively.Furthermore, the three sub-pixels may be combined to emit yellow (Y), cyan (C), and magenta (M) light, respectively.

[0040] Of the fourth to sixth subpixels, the subpixels having a light receiving device can be configured to detect visible light, infrared light, or both visible light and infrared light.

[0041] When a pixel has five or six types of subpixels, the manufacturing process of the display device becomes complicated, which may increase the manufacturing cost. Therefore, in the display device of one embodiment of the present invention, EL layers having the same structure are used in the light-emitting device that functions as a display device, and colored layers are formed for each color exhibited by the subpixels, thereby realizing full-color display.

[0042] For example, sub-pixels that emit R, G, and B light can be realized by using a light-emitting device having an EL layer with the same configuration (for example, a white-light-emitting device) and creating separate colored layers for R, G, and B. In this case, a light-emitting device that emits infrared light is used for the sub-pixels that emit infrared light.

[0043] Specifically, one embodiment of the present invention includes a first pixel, a second pixel, and a third pixel. The first pixel to the third pixel include a first subpixel, a second subpixel, and a third subpixel, respectively. The first pixel and the second pixel share a fourth subpixel. The third pixel includes a fifth subpixel. The first subpixel includes a first light-emitting device and a first colored layer. The second subpixel includes a second light-emitting device and a second colored layer. The third subpixel includes a third light-emitting device and a third colored layer. The first light-emitting device includes a first pixel electrode, a first EL layer on the first pixel electrode, and a common electrode on the first EL layer. the second light-emitting device has a second pixel electrode, a second EL layer on the second pixel electrode, and a common electrode on the second EL layer; the third light-emitting device has a third pixel electrode, a third EL layer on the third pixel electrode, and a common electrode on the third EL layer; the first to third EL layers all have the same configuration and are separated from each other; the first to third colored layers transmit light of different colors, respectively; and the fourth and fifth sub-pixels each have one different from each other of a fourth light-emitting device that emits infrared light, a first light-receiving device, and a second light-receiving device.

[0044] The third pixel preferably further includes a sixth subpixel. For example, the fourth subpixel may include a second light-receiving device, the fifth subpixel may include a fourth light-emitting device, and the sixth subpixel may include a first light-receiving device, with the fourth subpixel detecting at least visible light and the sixth subpixel detecting at least infrared light. In this case, the fourth subpixel preferably detects light in at least a part of the wavelength range of the light emitted by the first to third subpixels. The sixth subpixel preferably detects infrared light emitted by the fifth subpixel.

[0045] The display device of one embodiment of the present invention preferably further includes a fourth pixel. The fourth pixel includes a first subpixel, a second subpixel, a third subpixel, and a sixth subpixel.

[0046] For example, the fourth subpixel may have a second light-receiving device, the fifth subpixel may have a fourth light-emitting device, and the sixth subpixel may have a first light-receiving device, with the fourth subpixel detecting at least visible light and the sixth subpixel detecting at least infrared light. In this case, it is preferable that the fourth subpixel detects light in at least a part of the wavelength range of the light emitted by the first to third subpixels. It is preferable that the sixth subpixel detects infrared light emitted by the fifth subpixel.

[0047] Furthermore, for example, the fourth subpixel may have a fourth light-emitting device, the fifth subpixel may have a first light-receiving device, and the sixth subpixel may have a second light-receiving device, with the fifth subpixel detecting at least infrared light and the sixth subpixel detecting at least visible light. In this case, it is preferable that the fifth subpixel detects infrared light emitted by the fourth subpixel. It is preferable that the sixth subpixel detects light in at least a part of the wavelength range of light emitted by the first to third subpixels.

[0048] Furthermore, light-emitting devices having EL layers with the same configuration may be used for the sub-pixels that emit R, G, B, and IR light. For example, the sub-pixels that emit R, G, B, and IR light can be realized by using light-emitting devices that emit both white and infrared light and creating separate colored layers for R, G, and B. Note that by stacking two or more colored layers of R, G, and B, visible light is blocked, and sub-pixels that emit IR light can be realized.

[0049] Specifically, the fourth light-emitting device has a fourth pixel electrode, a fourth EL layer on the fourth pixel electrode, and a common electrode on the fourth EL layer, and the first to fourth EL layers may all have the same configuration and be separated from each other.

[0050] Alternatively, the first and second light-receiving devices may have the same configuration. For example, by using light-receiving devices that detect both visible light and infrared light as the first and second light-receiving devices and providing a filter that blocks visible light overlaying the first light-receiving device, the sub-pixel having the first light-receiving device can be configured to detect only infrared light (i.e., the sub-pixel having the second light-receiving device can be configured to detect a different wavelength range from that of the sub-pixel having the second light-receiving device).

[0051] Here, an island-shaped light-emitting layer is provided in a subpixel having a light-emitting device, and an island-shaped active layer (also referred to as a photoelectric conversion layer) is provided in a subpixel having a light-receiving device. When light-emitting devices with different structures are used for the subpixels emitting R, G, and B light and the subpixels emitting IR light, island-shaped light-emitting layers are formed separately depending on the light-emitting device. In this way, in a display device according to one embodiment of the present invention, island-shaped light-emitting layers and island-shaped active layers must be formed separately depending on the function of the subpixel.

[0052] In this specification, the term "island-like" refers to a state in which two or more layers made of the same material and formed in the same process are physically separated. For example, an island-like light-emitting layer refers to a state in which the light-emitting layer is physically separated from the adjacent light-emitting layer.

[0053] Furthermore, when using light-emitting devices having EL layers with the same configuration, layers other than the pixel electrode (e.g., the light-emitting layer) included in the light-emitting device can be made common to multiple sub-pixels. This allows multiple sub-pixels to share a continuous film. However, some layers included in the light-emitting device have relatively high conductivity. When multiple sub-pixels share a highly conductive layer as a continuous film, leakage current may occur between the sub-pixels. In particular, as display devices become higher in definition or aperture ratio and the distance between sub-pixels becomes smaller, this leakage current becomes significant and may cause a deterioration in the display quality of the display device.

[0054] Therefore, in a display device according to one embodiment of the present invention, at least a part of the EL layer in each subpixel is formed in an island shape. Since at least a part of the EL layer is separated for each subpixel, crosstalk between adjacent subpixels can be suppressed. This allows the display device to achieve both high resolution and high display quality.

[0055] For example, island-shaped light-emitting layers can be formed by vacuum deposition using a metal mask. However, this method can result in deviations in the shape and position of the island-shaped light-emitting layers from the design due to various factors, such as the accuracy of the metal mask, misalignment between the metal mask and the substrate, deflection of the metal mask, and the spread of the contours of the formed film due to vapor scattering, making it difficult to achieve high-definition and high-aperture display devices. Furthermore, during deposition, the contours of the layer can become blurred, resulting in thin edges. In other words, the thickness of the island-shaped light-emitting layer can vary depending on the location. Furthermore, when fabricating large, high-resolution, or high-definition display devices, there is a concern that low manufacturing yields may be caused by low dimensional accuracy of the metal mask and deformation due to heat, etc.

[0056] Therefore, when manufacturing a display device according to one embodiment of the present invention, the light-emitting layer is processed into a fine pattern by photolithography without using a shadow mask such as a metal mask. Specifically, a pixel electrode is formed for each subpixel, and then the light-emitting layer is formed over the plurality of pixel electrodes. Then, the light-emitting layer is processed by photolithography to form one island-shaped light-emitting layer for each pixel electrode. This allows the light-emitting layer to be divided into subpixels, and an island-shaped light-emitting layer can be formed for each subpixel.

[0057] When the light-emitting layer is processed into an island shape, a structure in which the light-emitting layer is processed using photolithography directly above the light-emitting layer is considered. In this structure, the light-emitting layer may be damaged (e.g., damaged by processing), resulting in a significant loss of reliability. Therefore, when manufacturing a display device according to one embodiment of the present invention, it is preferable to form a mask layer (which may also be referred to as a sacrificial layer) on a layer (e.g., a carrier transport layer or a carrier injection layer, more specifically, an electron transport layer or an electron injection layer) located above the light-emitting layer and process the light-emitting layer into an island shape. By applying this method, a highly reliable display device can be provided. In this specification and the like, the mask film and the mask layer are each located above at least the light-emitting layer (more specifically, a layer that is processed into an island shape among the layers constituting the EL layer) and have the function of protecting the light-emitting layer during the manufacturing process.

[0058] As described above, the island-shaped light-emitting layer manufactured by the manufacturing method of the display device according to one embodiment of the present invention is not formed using a metal mask having a fine pattern, but is formed by forming a light-emitting layer over the entire surface and then processing it. Specifically, the island-shaped light-emitting layer has a size that is divided and miniaturized by using a photolithography method or the like. Therefore, it can be made smaller than the size that can be formed using a metal mask. Therefore, it is possible to realize a high-definition display device or a display device with a high aperture ratio, which has been difficult to achieve until now.

[0059] In the manufacturing method of a display device according to one embodiment of the present invention, the number of times of processing the light-emitting layer by photolithography can be reduced to two or three times, which is preferable because it can reduce manufacturing costs and improve manufacturing yields.

[0060] While it is difficult to achieve a spacing of less than 10 μm between adjacent light-emitting devices using, for example, a metal mask, the above-described method allows for a spacing of less than 10 μm, 5 μm or less, 3 μm or less, 2 μm or less, or even 1 μm or less. Furthermore, by using an exposure device for LSIs, for example, it is possible to narrow the spacing between adjacent light-emitting devices to 500 nm or less, 200 nm or less, 100 nm or less, or even 50 nm or less. This significantly reduces the area of ​​the non-light-emitting region that may exist between two light-emitting devices, enabling an aperture ratio approaching 100%. For example, an aperture ratio of 50% or more, 60% or more, 70% or more, 80% or more, or even 90% or more, but less than 100%, can be achieved.

[0061] Furthermore, the pattern of the light-emitting layer itself (also called the processing size) can be made much smaller than when a metal mask is used. Furthermore, for example, when a metal mask is used to separately form light-emitting layers, thickness variations occur between the center and edges of the light-emitting layer, resulting in a smaller effective area that can be used as a light-emitting region relative to the area of ​​the light-emitting layer. On the other hand, with the above-described manufacturing method, a film formed to a uniform thickness is processed, so island-shaped light-emitting layers can be formed with a uniform thickness. Therefore, even with a fine pattern, almost the entire area can be used as a light-emitting region. This makes it possible to manufacture a display device that combines high definition and a high aperture ratio. Furthermore, it is possible to achieve a smaller and lighter display device.

[0062] Specifically, a display device of one embodiment of the present invention can have a resolution of, for example, 2000 ppi or more, preferably 3000 ppi or more, more preferably 5000 ppi or more, and even more preferably 6000 ppi or more, and can have a resolution of 20000 ppi or less, or 30000 ppi or less.

[0063] The same manufacturing method as for the light-emitting device can be applied to the light-receiving device. The island-shaped active layer of the light-receiving device is formed by depositing a film that will become the active layer on the entire surface and then processing it, rather than using a metal mask with a fine pattern. This allows the island-shaped active layer to be formed with a uniform thickness. Furthermore, by providing a mask layer on the active layer, damage to the active layer during the manufacturing process of the display device can be reduced, thereby improving the reliability of the light-receiving device.

[0064] A manufacturing method of a display device according to one embodiment of the present invention will be described in detail in Embodiment 2.

[0065] [Pixel layout example] 1A shows a top view of a display device 100. The display device 100 has a display section 102 in which a plurality of pixel units 103A are arranged in a matrix, and a connection section 140 on the outside of the display section 102.

[0066] FIG. 1A shows an example in which the connection unit 140 is located below the display unit 102 in a top view, but the location of the connection unit 140 is not particularly limited. The connection unit 140 only needs to be located in at least one of the upper, right, left, and lower sides of the display unit 102 in a top view, and may be located so as to surround the four sides of the display unit 102. The top surface shape of the connection unit 140 may be strip-shaped, L-shaped, U-shaped, frame-shaped, or the like. Furthermore, the connection unit 140 may be singular or plural. In this specification and the like, the top surface shape refers to the shape in a plan view, that is, the shape seen from above.

[0067] 1B shows an example of the configuration of the pixel unit 103 A. The pixel unit 103 A has four pixels: two pixels 110 a, one pixel 105 a, and one pixel 105 b.

[0068] The pixel 110a is composed of five subpixels: 110R, 110G, 110B, 110IR, and 110S1.

[0069] The top surface shape of the sub-pixel shown in FIG. 1B etc. corresponds to the top surface shape of the light-emitting region or the light-receiving region.

[0070] The top surface shape of the subpixel may be, for example, a triangle, a quadrangle (including a rectangle and a square), a polygon such as a pentagon, a polygon with rounded corners, an ellipse, or a circle.

[0071] Furthermore, the circuit layout constituting the subpixel is not limited to the range of the subpixel shown in Fig. 1B etc., and may be located outside of it. For example, the transistor of the subpixel 110R may be located within the range of the subpixel 110R shown in Fig. 1B, or part or all of the transistor may be located outside the range of the subpixel 110R.

[0072] 1B shows an example in which one pixel 110a is configured with three rows and two columns. The pixel 110a has a subpixel 110R in the first row, a subpixel 110G in the second row, and a subpixel 110B across these two rows. The pixel 110a also has two subpixels (subpixels 110IR and 110S1) in the third row. In other words, the pixel 110a has three subpixels (subpixels 110R, 110G, and 110S1) in the left column (first column) and two subpixels (subpixels 110B and 110IR) in the right column (second column).

[0073] In other words, the pixel unit 103A has a first arrangement pattern and a second arrangement pattern repeatedly arranged in the X direction. In the first arrangement pattern, the subpixel 110R, the subpixel 110G, the subpixel 110S1, the subpixel 110R, the subpixel 110G, and the subpixel 110S2 are arranged in this order in the Y direction. In the second arrangement pattern, the subpixel 110B, the subpixel 110IR, the subpixel 110B, and the subpixel 110S2 are arranged in this order in the Y direction. Note that the first arrangement pattern and the second arrangement pattern share one subpixel 110S2.

[0074] The longitudinal direction (also referred to as the long side direction) of the subpixels 110R, 110G, 110S1, and 110S2 is the X direction, and the longitudinal direction of the subpixel 110B is the Y direction.

[0075] The pixel 105a and the pixel 105b each have subpixels 110R, 110G, and 110B, and further have a subpixel 110S2 in common.

[0076] 1B shows an example in which pixel 105a and pixel 105b are each configured with three rows and two columns. Each of pixel 105a and pixel 105b has subpixel 110R in the first row, subpixel 110G in the second row, and subpixel 110B across these two rows. Furthermore, pixel 105a and pixel 105b share one subpixel 110S2 in the third row. That is, subpixel 110S2 is provided across pixel 105a and pixel 105b.

[0077] The sub-pixel 110R emits red light, the sub-pixel 110G emits green light, the sub-pixel 110B emits blue light, and the sub-pixel 110IR emits infrared light.

[0078] The subpixels 110S1 and 110S2 have at least part of the wavelength ranges they detect that are different from each other. In this embodiment, a case will be mainly described where the subpixel 110S1 detects infrared light and the subpixel 110S2 detects visible light. Note that the subpixel 110S1 may detect visible light and the subpixel 110S2 may detect infrared light. Alternatively, one of the subpixels 110S1 and 110S2 may detect both visible light and infrared light.

[0079] In the subpixel 110S1, the light-receiving device can supply a current according to the intensity of the received light. When the display device of this embodiment is used in a wearable device, for example, the subpixel 110S1 that detects infrared light can be used to detect the blinking of a user of the wearable device. Data obtained from the subpixel 110S1 may be used in a system using AI (Artificial Intelligence). For example, the AI-based system can be used to estimate the degree of eye fatigue of a user from the frequency of blinking.

[0080] Furthermore, when the display device of this embodiment is used in a wearable device, for example, the subpixel 110S1 that detects infrared light can be used to capture an image of the periphery of the eye, the surface of the eye, or the inside of the eye (such as the fundus) of the user of the wearable device. Therefore, the wearable device can have a function to detect one or more of the number of blinks, eyeball movement, and eyelid movement of the user.

[0081] Furthermore, when the display device of this embodiment is used in a wearable device, for example, the subpixel 110S2 that detects visible light can be used to capture an image of the eyes of a user of the wearable device. Data obtained from the subpixel 110S2 can be used for, for example, eye tracking.

[0082] The use of the data that can be acquired from the sub-pixel 110S1 and the sub-pixel 110S2 is not particularly limited, and the data can be used for various processes and functions in a display device or electronic device.

[0083] Each of the sub-pixels 110R, 110G, 110B, and 110IR includes a light-emitting device, and each of the sub-pixels 110S1 and 110S2 includes a light-receiving device.

[0084] As the light-emitting device, for example, an OLED (organic light-emitting diode) or a QLED (quantum-dot light-emitting diode) is preferably used. Examples of the light-emitting substance (also referred to as a light-emitting material) that the light-emitting device has include a substance that emits fluorescence (fluorescent material), a substance that emits phosphorescence (phosphorescent material), an inorganic compound (such as a quantum dot material), and a substance that exhibits thermally activated delayed fluorescence (thermally activated delayed fluorescence: TADF material). Furthermore, an LED such as a micro LED (light-emitting diode) can also be used as the light-emitting device.

[0085] The light emitting device can emit light of infrared, red, green, blue, cyan, magenta, yellow, white, etc. The color purity can be improved by providing the light emitting device with a microcavity structure.

[0086] Regarding the structure and materials of the light-emitting device, reference can be made to Embodiment 4.

[0087] The light receiving device can be, for example, a pn-type or pin-type photodiode. The light receiving device functions as a photoelectric conversion device (also called a photoelectric conversion element) that detects light incident on the light receiving device and generates electric charges. The amount of electric charges generated by the light receiving device is determined based on the amount of light incident on the light receiving device.

[0088] The light-receiving device can detect one or both of visible light and infrared light. When detecting visible light, it can detect one or more of light such as blue, purple, blue-purple, green, yellow-green, yellow, orange, and red. When detecting infrared light, it is preferable because it enables detection of an object even in a dark place.

[0089] In particular, it is preferable to use an organic photodiode having a layer containing an organic compound as the light-receiving device. Organic photodiodes can be easily made thin, lightweight, and large in area, and have a high degree of freedom in shape and design, making them applicable to a variety of display devices.

[0090] The configuration and materials of the light receiving device can be referred to in the fifth embodiment.

[0091] The pixel can perform full-color display using sub-pixels 110R, 110G, and 110B. The layout of the sub-pixels 110R, 110G, and 110B is a so-called S-stripe arrangement, which enables high display quality to be achieved.

[0092] The subpixel 110IR can be used as a light source, and the infrared light emitted by the subpixel 110IR can be detected by the subpixel 110S1. The subpixel 110IR may have the lowest aperture ratio among the five subpixels.

[0093] 1B shows the subpixels 110R, 110G, 110B, and 110S1 as having equal or approximately equal aperture ratios (sizes, which can also be referred to as the sizes of their light-emitting or light-receiving regions), but this is not a limitation of the present invention. The aperture ratios of the subpixels 110R, 110G, 110B, 110IR, 110S1, and 110S2 can be determined as appropriate. The aperture ratios of the subpixels 110R, 110G, 110B, 110IR, 110S1, and 110S2 may be different from one another, or two or more of them may be equal or approximately equal.

[0094] The subpixel 110S1 may have a higher aperture ratio than at least one of the subpixels 110R, 110G, and 110B. For example, depending on the resolution of the display device and the circuit configuration of the subpixels, the aperture ratio of the subpixel 110S1 may be higher than the aperture ratios of the other subpixels.

[0095] The subpixel 110S1 may have a lower aperture ratio than at least one of the subpixels 110R, 110G, and 110B. A smaller light-receiving area of ​​the subpixel 110S1 narrows the imaging range, reducing blurring in the imaging results and improving resolution. This is preferable because it enables high-definition or high-resolution imaging.

[0096] 1B shows an example in which the aperture ratio of the subpixel 110S2 is higher than that of the subpixel 110S1. Alternatively, the aperture ratios of the subpixels 110S1 and 110S2 may be the same.

[0097] The large light-receiving area of ​​the subpixel 110S2 may make it easier to detect an object. Furthermore, if high resolution is not required for detection using the subpixel 110S2, the subpixel 110S2 can be shared by multiple pixels, reducing the number of transistors and simplifying the pixel layout.

[0098] As described above, for example, when detecting blinking or estimating fatigue level of a user of a wearable device using subpixel 110S1, it is preferable to be able to capture an image of the user's eyes with high resolution using subpixel 110S1. On the other hand, for example, when performing eye tracking of a user of a wearable device using subpixel 110S2, the resolution of the image captured using subpixel 110S2 can be lower than that of the image captured using subpixel 110S1.

[0099] In this way, the subpixel 110S1 and the subpixel 110S2 can each have a detection wavelength, resolution, and aperture ratio suited to the application, allowing the subpixel 110S1 and the subpixel 110S2 to be used for different functions in a display device or electronic device.

[0100] It is preferable that the subpixel that generates the light detected by the subpixel 110S1 is located close to the subpixel 110S1 within the pixel. For example, in the pixel unit 103A, it is preferable that the subpixel 110S1 detects the light emitted by the subpixel 110G that is adjacent to the subpixel 110S1. This improves detection accuracy.

[0101] Furthermore, the subpixel 110IR may have a lower aperture ratio than at least one of the subpixels 110R, 110G, 110B, 110S1, and 110S2. The pixel 110a shown in FIG. 1B illustrates an example in which the subpixel 110IR has the lowest aperture ratio among the five subpixels. For example, since the subpixel 110IR is used as a light source, a passive matrix driving method may be used to drive the light-emitting device. In other words, the subpixel 110IR does not need to be provided with a transistor or the like, and the size of the subpixel 110IR can be reduced.

[0102] 2A shows a top view of a display device 100 different from that shown in FIG. 1A. The display device 100 shown in FIG. 2A includes a display unit 102 having pixel units 103A and 103B, and a connection unit 140 outside the display unit 102.

[0103] The pixel unit 103A shown in FIG. 2A can be configured as shown in FIG. 1B, and therefore detailed description thereof will be omitted.

[0104] 2B shows an example of the configuration of the pixel unit 103B. The pixel unit 103B has four pixels 110a.

[0105] 1A and 1B show a configuration in which two pixels 110a have one pair of pixels 105a and 105b. Alternatively, this configuration can be said to have one sub-pixel 110S2 for two sub-pixels 110S1 or two sub-pixels 110IR. Also, FIGS. 2A and 2B show an example in which one pixel unit 103A has one pixel unit 103B. That is, this configuration shows a configuration in which fourteen pixels 110a have one pair of pixels 105a and 105b. Alternatively, this configuration can be said to have one sub-pixel 110S2 for fourteen sub-pixels 110S1 or fourteen sub-pixels 110IR.

[0106] In other words, the pixel unit 103B has a first arrangement pattern and a second arrangement pattern repeatedly arranged in the X direction. In the first arrangement pattern, the subpixels 110R, 110G, and 110S1 are repeatedly arranged in this order in the Y direction. In the second arrangement pattern, the subpixels 110B and 110IR are repeatedly arranged in this order in the Y direction.

[0107] The longitudinal direction (also referred to as the long side direction) of the subpixels 110R, 110G, and 110S1 is the X direction, and the longitudinal direction of the subpixel 110B is the Y direction.

[0108] There is no particular limitation on the number of pixels 110a, the number of pixels 105a, and the number of pixels 105b included in the display unit 102. For example, the number of pixels 105a and the number of pixels 105b may be the same as the number of pixels 110a, or may be half or less of the number of pixels 110a, or may be one-third or less of the number of pixels 110a, or may be one-fourteenth or less of the number of pixels 110a.

[0109] In a configuration in which the pixel unit 103A shown in FIG. 1B is applied to the display unit 102 of FIG. 1A, the number of pixels 105a and 105b is half the number of pixels 110a. In a configuration in which the pixel unit 103A shown in FIG. 3A or 3B is applied to the display unit 102 of FIG. 1A, the number of pixels 105a and 105b is the same as the number of pixels 110a. In a configuration in which the pixel unit 103A shown in FIG. 1B and the pixel unit 103B shown in FIG. 2B are applied to the display unit 102 of FIG. 2A, the number of pixels 105a and 105b is 1 / 14 the number of pixels 110a. For example, the number of pixels 105a and 105b can be determined depending on the resolution required for imaging using the sub-pixel 110S2.

[0110] The display unit 102 may have different numbers of sub-pixels 110S1, sub-pixels 110S2, and sub-pixels 110IR, or two or more of them may be the same number.

[0111] 3A and 3B show a modified example of the pixel unit 103A.

[0112] 3A includes one each of pixel 110b, pixel 110c, pixel 105a, and pixel 105b. The pixel 105a and pixel 105b have the same configuration as that shown in FIG. 1B, and therefore a description thereof will be omitted.

[0113] The pixel 110b is composed of four subpixels: 110R, 110G, 110B, and 110S1.

[0114] Pixel 110b is arranged in three rows and two columns. Pixel 110b has subpixel 110R in the first row, subpixel 110G in the second row, and subpixel 110B across these two rows. Pixel 110b also has subpixel 110S1 in the third row.

[0115] The pixel 110c is composed of four subpixels: 110R, 110G, 110B, and 110IR.

[0116] The pixel 110c is arranged in three rows and two columns. The pixel 110c has a subpixel 110R in the first row, a subpixel 110G in the second row, and a subpixel 110B across these two rows. The pixel 110c also has a subpixel 110IR in the third row.

[0117] The pixel unit 103A shown in Fig. 3B includes one pixel 110b, one pixel 110d, one pixel 105c, and one pixel 105d. The pixel 110b has the same configuration as that shown in Fig. 3A, and therefore a description thereof will be omitted.

[0118] The pixel 110d is composed of four subpixels: 110R, 110G, 110B, and 110S2.

[0119] The pixel 110d is arranged in three rows and two columns. The pixel 110d has a subpixel 110R in the first row, a subpixel 110G in the second row, and a subpixel 110B across these two rows. The pixel 110d also has a subpixel 110S2 in the third row.

[0120] 3B shows an example in which pixel 105c and pixel 105d are each configured with three rows and two columns. Pixel 105c and pixel 105d each have subpixel 110R in the first row, subpixel 110G in the second row, and subpixel 110B across these two rows. Pixels 105c and 105d also share one subpixel 110IR in the third row.

[0121] 1B and 3A show an example in which the subpixel shared by two pixels is the subpixel 110S2, but this is not limiting. As shown in FIG. 3B, the subpixel 110IR may be shared by two pixels. Also, the subpixel 110S1 may be shared by two pixels.

[0122] The pixel unit 103A shown in Figure 1B has two sub-pixels 110IR and one sub-pixel 110S2 for each of the sub-pixels 110IR and 110S1. The pixel unit 103A shown in Figures 3A and 3B has the same number of sub-pixels 110S1, 110S2, and 110IR.

[0123] The pixel unit 103A shown in Figure 1B can improve the definition of the sub-pixel 110S1 compared to the pixel unit 103A shown in Figures 3A and 3B. The pixel unit 103A shown in Figure 1B has a maximum of five sub-pixels per pixel, whereas the pixel unit 103A shown in Figures 3A and 3B has a maximum of four sub-pixels per pixel. Therefore, the pixel units 103A shown in Figures 3A and 3B may be able to improve the aperture ratio of a single sub-pixel and may be easier to design and manufacture compared to the pixel unit 103A shown in Figure 1B.

[0124] 4A to 4E show other configuration examples of the pixel 110. FIG.

[0125] Each pixel 110 shown in FIGS. 4A to 4E is composed of five subpixels: subpixels 110R, 110G, 110B, 110IR, and 110S1.

[0126] The pixel 110 shown in FIG. 4A has a configuration in which the positions of the subpixel 110R and the subpixel 110G are swapped in the pixel 110a shown in FIG. 1B.

[0127] 4A has subpixel 110G in the first row, subpixel 110R in the second row, and subpixel 110B across these two rows. Also, pixel 110 has two subpixels (subpixels 110IR and 110S1) in the third row. In other words, pixel 110 has three subpixels (subpixels 110G, 110R, and 110S1) in the left column (first column), and two subpixels (subpixels 110B and 110IR) in the right column (second column).

[0128] The pixel 110 shown in FIG. 4B has a configuration in which the positions of the subpixel 110S1 and the subpixel 110IR are swapped in the pixel 110a shown in FIG. 1B.

[0129] 4B has subpixel 110R in the first row, subpixel 110G in the second row, and subpixel 110B across these two rows. Also, pixel 110 has two subpixels (subpixels 110IR and 110S1) in the third row. In other words, pixel 110 has three subpixels (subpixels 110R, 110G, and 110IR) in the left column (first column), and two subpixels (subpixels 110B and 110S1) in the right column (second column).

[0130] The pixel 110 shown in FIG. 4C has a configuration in which the aperture ratio of the subpixel 110S1 is made higher than that of the subpixels 110R and 110G in the pixel 110a shown in FIG. 1B.

[0131] 4C has subpixel 110R in the first row, subpixel 110G in the second row, and subpixel 110B across these two rows. Also, pixel 110 has two subpixels (subpixels 110IR and 110S1) in the third row. In other words, pixel 110 has three subpixels (subpixels 110R, 110G, and 110S1) in the left column (first column), and two subpixels (subpixels 110B and 110IR) in the right column (second column).

[0132] In the pixel 110 shown in Fig. 4C, the aperture ratio of the subpixel 110B is equal to or approximately equal to the aperture ratio of the subpixel 110IR. Also, in Fig. 4C, the aperture ratio of the subpixel 110S1 is higher than that of the subpixels 110R and 110G. In the pixel 110 shown in Fig. 4C, the aperture ratio of the subpixel 110S1 is the highest among the subpixels 110R, 110G, 110B, 110IR, and 110S1.

[0133] 4D and 4E show an example in which one pixel 110 is configured with two rows and three columns. The pixel 110 has three subpixels (subpixels 110R, 110G, and 110B) in the first row and two subpixels (subpixels 110IR and 110S1) in the second row. In other words, the pixel 110 has the subpixel 110R in the left column (first column), the subpixel 110G in the center column (second column), and the subpixel 110S1 extending from the left column to the center column. The pixel 110 also has two subpixels (subpixels 110B and 110IR) in the right column (third column).

[0134] The pixel can perform full-color display using sub-pixels 110R, 110G, and 110B. In the pixel 110 shown in Figures 4D and 4E, the sub-pixels 110R, 110G, and 110B are laid out in a so-called stripe arrangement, which allows for high display quality.

[0135] The sub-pixel 110IR can be used as a light source, and the infrared light emitted by the sub-pixel 110IR can be detected by the sub-pixel 110S1.

[0136] 4D, the subpixels 110R, 110G, 110B, and 110S1 all have the same or approximately the same aperture ratio. Among the subpixels 110R, 110G, 110B, 110IR, and 110S1, the subpixel 110IR has the lowest aperture ratio.

[0137] 4E, the subpixels 110R, 110G, 110B, and 110IR all have the same or approximately the same aperture ratio. Among the subpixels 110R, 110G, 110B, 110IR, and 110S1, the subpixel 110S1 has the highest aperture ratio.

[0138] 4D or 4E is applied to pixel 110, it is preferable to use pixel 105e and pixel 105f shown in Fig. 4F as a pair of pixels that share a subpixel, which allows the layout of subpixels 110R, 110G, and 110B in each pixel to be a stripe arrangement.

[0139] 4F shows an example in which pixel 105e and pixel 105f are each configured with two rows and three columns. Each of pixel 105e and pixel 105f has three subpixels (subpixels 110R, 110G, and 110B) in the first row and one shared subpixel 110S2 in the second row.

[0140] Furthermore, the display device of one embodiment of the present invention is not limited to a configuration in which two pixels share one subpixel, and three or more pixels may share one subpixel. Figure 4G shows an example in which three pixels, 105a, 105b, and 105g, share one subpixel 110S2. Similarly, four, five, or six pixels may share one subpixel.

[0141] [Example of cross-sectional structure] 5 to 13 show examples of cross-sectional views of display devices according to embodiments of the present invention.

[0142] Fig. 5A shows a cross-sectional view taken along dashed line X1-X2 in Fig. 1B, Fig. 5B shows a cross-sectional view taken along dashed line X3-X4 in Fig. 1B, Fig. 5C shows a cross-sectional view taken along dashed line X5-X6 in Fig. 1B, and Fig. 6A and Fig. 6B show cross-sectional views taken along dashed line Y1-Y2 in Fig. 1A.

[0143] The display device shown in Figures 5A to 5C has a sub-pixel 110R that emits red light, a sub-pixel 110G that emits green light, a sub-pixel 110S1 that detects infrared light, a sub-pixel 110B that emits blue light, a sub-pixel 110IR that emits infrared light, and a sub-pixel 110S2 that detects visible light.

[0144] The display device of one embodiment of the present invention may be any of a top-emission type that emits light in a direction opposite to a substrate on which a light-emitting device is formed, a bottom-emission type that emits light toward a substrate on which a light-emitting device is formed, and a dual-emission type that emits light from both sides. In this embodiment, a top-emission display device will be mainly described as an example.

[0145] The subpixel 110R includes a light-emitting device 130R and a colored layer 132R that transmits red light, so that light emitted from the light-emitting device 130R is extracted as red light to the outside of the display device via the colored layer 132R.

[0146] Similarly, the subpixel 110G has a light-emitting device 130G and a colored layer 132G that transmits green light, so that the light emitted from the light-emitting device 130G is extracted as green light to the outside of the display device via the colored layer 132G.

[0147] The subpixel 110B also includes a light-emitting device 130B and a colored layer 132B that transmits blue light, so that light emitted from the light-emitting device 130B is extracted as blue light to the outside of the display device via the colored layer 132B.

[0148] A full color display can be achieved using the sub-pixels 110R, 110G, and 110B.

[0149] The subpixel 110IR has a light emitting device 130IR that emits infrared light. Therefore, the light emitted from the light emitting device 130IR is extracted as infrared light to the outside of the display device without passing through a colored layer.

[0150] The wavelength of the infrared light can be 750 nm or more, preferably 780 nm or more. It is particularly preferable to use near-infrared light with a wavelength of 750 nm or more and 2500 nm or less as the infrared light. The light-emitting device 130IR preferably has an emission peak in the range of 750 nm or more and 2500 nm or less.

[0151] The subpixel 110S1 includes a light-receiving device 150a and a colored layer 132V that transmits infrared light. The subpixel 110S1 detects infrared light. Light Lin enters the light-receiving device 150a from outside the display device through the substrate 120, the resin layer 122, and the protective layer 131.

[0152] The colored layer 132V functions as a visible light cut filter. FIG. 5A shows an example in which the colored layer 132V is formed by laminating a colored layer 132G and a colored layer 132R. The colored layer 132V is not particularly limited as long as it blocks visible light and transmits infrared light. For example, laminating two or more of the colored layers 132R, 132G, and 132B is preferable because it reduces the number of steps compared to forming the colored layer 132V separately.

[0153] It is particularly preferable that the subpixel 110S1 detects infrared light emitted by the subpixel 110IR. For example, while an image is displayed using the subpixels 110R, 110G, and 110B, the subpixel 110IR can be used as a light source to detect reflected light emitted from the light source at the subpixel 110S1.

[0154] The subpixel 110S2 includes a light receiving device 150b. The subpixel 110S2 detects visible light. Light Lin enters the light receiving device 150b from outside the display device through the substrate 120, the resin layer 122, and the protective layer 131.

[0155] It is particularly preferable that the subpixel 110S2 detects light in at least a part of the wavelength range of the light emitted by the subpixels 110R, 110G, and 110B. The subpixel 110S2 may have a colored layer.

[0156] In one embodiment of the present invention, an organic EL device is used as the light-emitting device, and an organic photodiode is used as the light-receiving device. The organic EL device and the organic photodiode can be formed on the same substrate. Therefore, the organic photodiode can be built into a display device using the organic EL device.

[0157] The light-emitting device and the light-receiving device each have a pair of electrodes, one of which functions as an anode and the other as a cathode.

[0158] The light-receiving device is driven by applying a reverse bias between the pixel electrode and the common electrode, so that it can detect light incident on the light-receiving device, generate electric charges, and extract them as a current.

[0159] Since organic photodiodes have many layers that can be configured in common with organic EL devices, layers that can be configured in common can be deposited together, thereby preventing an increase in the number of film deposition steps.

[0160] For example, one of the pair of electrodes (common electrode) can be a layer common to the light-receiving device and the light-emitting device. It is also preferable that at least one of the hole injection layer, hole transport layer, hole blocking layer, electron blocking layer, electron transport layer, and electron injection layer be a layer common to the light-receiving device and the light-emitting device.

[0161] Here, in a display device according to one embodiment of the present invention, a layer shared by the light-receiving device and the light-emitting device (which may also be referred to as a continuous layer shared by the light-receiving device and the light-emitting device) may be present. Such a layer may have different functions in the light-emitting device and the light-receiving device. In this specification, components may be referred to based on their functions in the light-emitting device. For example, a hole injection layer functions as a hole injection layer in the light-emitting device and as a hole transport layer in the light-receiving device. Similarly, an electron injection layer functions as an electron injection layer in the light-emitting device and as an electron transport layer in the light-receiving device. Furthermore, a layer shared by the light-receiving device and the light-emitting device may have the same function in the light-emitting device and in the light-receiving device. A hole transport layer functions as a hole transport layer in both the light-emitting device and the light-receiving device, and an electron transport layer functions as an electron transport layer in both the light-emitting device and the light-receiving device.

[0162] The light-emitting device 130R has a pixel electrode 111a, a first layer 113a, a common layer 114, and a common electrode 115. The light-emitting device 130G has a pixel electrode 111b, a first layer 113a, a common layer 114, and a common electrode 115. The light-emitting device 130B has a pixel electrode 111c, a first layer 113a, a common layer 114, and a common electrode 115. The light-receiving device 150a has a pixel electrode 111d, a second layer 113b, a common layer 114, and a common electrode 115. The light-emitting device 130IR has a pixel electrode 111e, a third layer 113c, a common layer 114, and a common electrode 115. The light-receiving device 150b also includes a pixel electrode 111f, a second layer 113b, a common layer 114, and a common electrode 115.

[0163] In this specification, among the EL layers of the light-emitting devices, a layer provided in an island shape for each light-emitting device is referred to as a first layer 113a or a third layer 113c, and a layer shared by multiple light-emitting devices is referred to as a common layer 114.

[0164] The configurations shown in Figures 5A to 5C are examples in which light-emitting devices having EL layers with the same configuration are used for the sub-pixels that emit R, G, and B light, and light-emitting devices that emit infrared light are used for the sub-pixels that emit IR light.

[0165] Light emitting devices 130R, 130G, and 130B each have a first layer 113a, which are spaced apart from one another.

[0166] By making the EL layer configurations of the light-emitting devices 130R, 130G, and 130B the same, it is possible to reduce the number of manufacturing steps for the display device, thereby reducing manufacturing costs and improving manufacturing yields.

[0167] The light-emitting device of the present embodiment may have a single structure (a structure having only one light-emitting unit) or a tandem structure (a structure having multiple light-emitting units). The light-emitting unit has at least one light-emitting layer.

[0168] The first layer 113a and the third layer 113c each include at least a light-emitting layer, and may include one or more of a hole-injection layer, a hole-transport layer, a hole-blocking layer, a charge-generating layer, an electron-blocking layer, an electron-transporting layer, and an electron-injection layer.

[0169] The light emitting devices 130R, 130G, and 130B have a first layer 113a.

[0170] For example, the first layer 113a can have a light-emitting material that emits blue light and a light-emitting material that emits visible light with a wavelength longer than blue. For example, the first layer 113a can have a structure including a light-emitting material that emits blue light and a light-emitting material that emits yellow light, or a structure including a light-emitting material that emits blue light, a light-emitting material that emits green light, and a light-emitting material that emits red light.

[0171] The light-emitting devices 130R, 130G, and 130B may be, for example, a single-structure light-emitting device having two light-emitting layers, one for emitting yellow (Y) light and one for emitting blue (B) light, or a single-structure light-emitting device having three light-emitting layers, one for emitting red (R), one for emitting green (G), and one for emitting blue light. For example, the number and color order of the stacked light-emitting layers may be, from the anode side, a three-layer structure of R, G, and B, or a three-layer structure of R, B, and G. Furthermore, another layer (also referred to as a buffer layer) may be provided between the two light-emitting layers. The buffer layer may be formed, for example, using a material that can be used for a hole transport layer or an electron transport layer.

[0172] Furthermore, when a light-emitting device with a tandem structure is used, a two-tiered tandem structure having a light-emitting unit that emits yellow light and a light-emitting unit that emits blue light, a two-tiered tandem structure having a light-emitting unit that emits red and green light and a light-emitting unit that emits blue light, or a three-tiered tandem structure having a light-emitting unit that emits blue light, a light-emitting unit that emits yellow, yellow-green, or green light, and red light, and a light-emitting unit that emits blue light, in that order, can be applied. For example, the number of stacked light-emitting units and the order of their colors can be, from the anode side, a two-tiered B / Y structure, a two-tiered B / X structure, a three-tiered B / Y / B structure, or a three-tiered B / X / B structure. The number of stacked light-emitting layers in the light-emitting unit X and the order of their colors can be, from the anode side, a two-layered R / Y structure, a two-layered R / G structure, a two-layered G / R structure, a three-layered G / R / G structure, or a three-layered R / G / R structure. Furthermore, another layer may be provided between the two light-emitting layers.

[0173] The light-emitting device 130IR includes a third layer 113c. The third layer 113c includes a light-emitting material that emits infrared light.

[0174] The light emitting device 130IR may be, for example, a light emitting device of a single structure that emits infrared light, or a light emitting device of a tandem structure that has two or more light emitting units that emit infrared light.

[0175] When creating separate light-emitting devices for subpixels that emit R, G, and B light and subpixels that emit IR light, the light-emitting device 130IR can be configured to emit mainly infrared light. In other words, the light-emitting device 130IR can be configured to emit very little or no visible light. Therefore, it is not necessary to provide a filter for blocking visible light in the subpixel 110IR.

[0176] When a light-emitting device having a tandem structure is used, the first layer 113a or the third layer 113c has a plurality of light-emitting units, and it is preferable to provide a charge-generating layer between each of the light-emitting units.

[0177] The light-emitting unit has at least one light-emitting layer. For example, when the light emitted by the light-emitting units is of a complementary color, the light-emitting device can emit white light. The light-emitting unit may also have one or more of a hole-injection layer, a hole-transport layer, a hole-blocking layer, an electron-blocking layer, an electron-transport layer, and an electron-injection layer.

[0178] By applying a microcavity structure, a light-emitting device configured to emit white light may also emit light of a specific wavelength, such as red, green, blue, or infrared light, with the wavelength enhanced.

[0179] For example, the first layer 113a and the third layer 113c may each include a hole injection layer, a hole transport layer, a light-emitting layer, and an electron transport layer in this order. Alternatively, an electron blocking layer may be provided between the hole transport layer and the light-emitting layer. Alternatively, an electron injection layer may be provided on the electron transport layer.

[0180] For example, the first layer 113a and the third layer 113c may each include an electron injection layer, an electron transport layer, a light-emitting layer, and a hole transport layer in this order. Alternatively, a hole blocking layer may be provided between the electron transport layer and the light-emitting layer. Alternatively, a hole injection layer may be provided on the hole transport layer.

[0181] The first layer 113a and the third layer 113c each preferably include a light-emitting layer and a carrier transport layer (electron transport layer or hole transport layer) on the light-emitting layer. The surfaces of the first layer 113a and the third layer 113c are exposed during the manufacturing process of the display device. Therefore, by providing the carrier transport layer on the light-emitting layer, the light-emitting layer can be prevented from being exposed to the outermost surface, thereby reducing damage to the light-emitting layer. This improves the reliability of the light-emitting device.

[0182] The configurations shown in FIGS. 5A and 5C are examples of the case where a light receiving device is used in which the sub-pixels that detect infrared light and the sub-pixels that detect visible light have a layer (second layer 113b) with the same configuration.

[0183] By using the second layer 113b for both the light-receiving devices 150a and 150b, the number of manufacturing steps of the display device can be reduced, which leads to a reduction in manufacturing cost and an improvement in manufacturing yield.

[0184] The light-receiving devices 150a and 150b preferably detect both visible light and infrared light. The subpixel 110S1 uses the colored layer 132V, which blocks visible light and allows only infrared light to enter the light-receiving device 150a. The subpixel 110S2 does not have a colored layer, allowing both visible light and infrared light to enter the light-receiving device 150b. In light detection using the subpixel 110S2, if infrared light is not required, the subpixel 110IR need not emit infrared light, and only visible light can be allowed to enter the light-receiving device 150b without providing a colored layer in the subpixel 110S2.

[0185] The second layer 113b includes at least an active layer. The second layer 113b of the light-receiving devices 150a and 150b can be fabricated independently of the first layer 113a and the third layer 113c of the light-emitting device, allowing for a wide range of materials to be used. The second layer 113b may include any of the materials that can be used for the first layer 113a and the third layer 113c. The second layer 113b may include one or more of the hole injection layer, hole transport layer, hole blocking layer, charge generation layer, electron blocking layer, electron transport layer, and electron injection layer that can be used for the first layer 113a and the third layer 113c.

[0186] The common layer 114 may include, for example, an electron injection layer or a hole injection layer. Alternatively, the common layer 114 may include a stack of an electron transport layer and an electron injection layer, or a stack of a hole transport layer and a hole injection layer. The common layer 114 is shared by the light-emitting devices 130R, 130G, 130B, and 130IR and the light-receiving devices 150a and 150b.

[0187] The edge of the pixel electrode preferably has a tapered shape. When the edge of the pixel electrode has a tapered shape, the first layer 113a, the second layer 113b, and the third layer 113c provided along the side surface of the pixel electrode also have a tapered shape. By tapering the side surface of the pixel electrode, the coverage of the first layer 113a, the second layer 113b, and the third layer 113c provided along the side surface of the pixel electrode can be improved. Furthermore, by tapering the side surface of the pixel electrode, foreign matter (for example, dust or particles) can be easily removed by a process such as cleaning during the manufacturing process, which is preferable.

[0188] In this specification, the term "tapered shape" refers to a shape in which at least a part of the side surface of the structure is inclined with respect to the substrate surface or the surface on which the structure is to be formed. For example, it is preferable to have a region in which the angle (also called the taper angle) between the inclined side surface and the substrate surface or the surface on which the structure is to be formed is less than 90°.

[0189] In FIG. 5A and other figures, the pixel electrode 111a and the first layer 113a, the pixel electrode 111b and the first layer 113a, and the pixel electrode 111d and the second layer 113b are not covered with an insulating layer. Therefore, the distance between adjacent light-emitting devices and the distance between adjacent light-emitting devices and light-receiving devices can be made extremely narrow. This allows for a high-definition or high-resolution display device. Furthermore, a mask for forming the insulating layer is not required, reducing the manufacturing cost of the display device.

[0190] Furthermore, by using a structure in which an insulating layer covering an edge of the pixel electrode is not provided between the pixel electrode and the EL layer, in other words, by using a structure in which an insulating layer is not provided between the pixel electrode and the EL layer, light emitted from the EL layer can be efficiently extracted. Therefore, the display device of one embodiment of the present invention can have extremely low viewing angle dependence. By reducing the viewing angle dependence, the visibility of images in the display device can be improved. For example, in the display device of one embodiment of the present invention, the viewing angle (the maximum angle at which a certain contrast ratio is maintained when the screen is viewed from an oblique direction) can be set to a range of 100° to less than 180°, preferably 150° to 170°. The above viewing angles can be applied to both the vertical and horizontal directions.

[0191] The common electrode 115 is shared by the light-emitting devices 130R, 130G, 130B, and 130IR and the light-receiving devices 150a and 150b. The common electrode 115 shared by the plurality of light-emitting devices and light-receiving devices is electrically connected to a conductive layer 123 provided in the connection portion 140 (see FIGS. 6A and 6B). The conductive layer 123 is preferably made of the same material and formed in the same process as the pixel electrodes.

[0192] 6A shows an example in which a common layer 114 is provided on the conductive layer 123, and the conductive layer 123 and the common electrode 115 are electrically connected via the common layer 114. Also, as shown in FIG. 6B, the common layer 114 does not have to be provided at the connection portion 140. In FIG. 6B, the conductive layer 123 and the common electrode 115 are directly connected. For example, by using a mask for defining a film formation area (also called an area mask or a rough metal mask to distinguish it from a fine metal mask), the regions where the common layer 114 and the common electrode 115 are formed can be changed.

[0193] 7A shows a cross-sectional view taken along dashed line X1-X2 in FIG. 5B, FIG. 7B shows a cross-sectional view taken along dashed line X3-X4 in FIG. 5B, and FIG. 7C shows a cross-sectional view taken along dashed line X5-X6 in FIG. 5B.

[0194] The cross-sectional structure shown in Figure 7A is the same as that shown in Figure 5A. The cross-sectional structure shown in Figure 7B differs from that shown in Figure 5B in that the light-emitting device 130IR does not have the third layer 113c but has the first layer 113a, and that the subpixel 110IR is provided with a colored layer 132V. The cross-sectional structure shown in Figure 7C is the same as that shown in Figure 5C.

[0195] The configurations shown in FIGS. 7A and 7B are examples in which light-emitting devices having EL layers with the same configuration are used for the sub-pixels that emit R, G, B, and IR light.

[0196] By making the EL layer configuration the same in the light-emitting devices 130R, 130G, 130B, and 130IR, it is possible to reduce the number of manufacturing steps for the display device, thereby reducing manufacturing costs and improving manufacturing yields.

[0197] Regarding the configuration of the subpixels 110R, 110G, 110B, 110S1, and 110S2, detailed description of the parts that are the same as those in FIGS. 5A and 5B will be omitted.

[0198] The subpixel 110IR includes a light-emitting device 130IR and a colored layer 132V that transmits infrared light, so that light emitted from the light-emitting device 130IR is extracted as infrared light to the outside of the display device via the colored layer 132V.

[0199] The colored layer 132V can have the same configuration in the subpixel 110S1 and the subpixel IR.

[0200] For example, the first layer 113a can have a light-emitting material that emits blue light, a light-emitting material that emits visible light with a wavelength longer than blue, and a light-emitting material that emits infrared light. For example, the first layer 113a can have a structure that includes a light-emitting material that emits blue light, a light-emitting material that emits yellow light, and a light-emitting material that emits infrared light, or a structure that includes a light-emitting material that emits blue light, a light-emitting material that emits green light, a light-emitting material that emits red light, and a light-emitting material that emits infrared light.

[0201] The light-emitting devices 130R, 130G, 130B, and 130IR may be, for example, a single-structure light-emitting device having three light-emitting layers: a light-emitting layer that emits yellow (Y), a light-emitting layer that emits blue (B), and a light-emitting layer that emits infrared (IR) light; or a single-structure light-emitting device having four light-emitting layers: a light-emitting layer that emits red (R), a light-emitting layer that emits green (G), a light-emitting layer that emits blue, and a light-emitting layer that emits infrared light. For example, the number of stacked light-emitting layers and the order of their colors, from the anode side, may be a four-layer structure of IR, R, G, and B, or a four-layer structure of IR, R, B, and G. Furthermore, another layer may be provided between the two light-emitting layers.

[0202] Furthermore, when a light-emitting device with a tandem structure is used, a two-stage tandem structure having a light-emitting unit that emits infrared light and yellow light, and a light-emitting unit that emits blue light, a three-stage tandem structure having a light-emitting unit that emits infrared light, a light-emitting unit that emits yellow light, and a light-emitting unit that emits blue light, a two-stage tandem structure having a light-emitting unit that emits infrared light, red and green light, and a light-emitting unit that emits blue light, a three-stage tandem structure having a light-emitting unit that emits infrared light, a light-emitting unit that emits red and green light, and a light-emitting unit that emits blue light, or a three-stage tandem structure having a light-emitting unit that emits blue light, a light-emitting unit that emits yellow, yellow-green, or green light, red light, and infrared light, and a light-emitting unit that emits blue light, in this order, and the like can be applied. For example, in the above-described example of the number of stacked light-emitting units in the tandem structure and the order of colors, it is possible to further apply a configuration in which an IR light-emitting unit is added, or a configuration in which a light-emitting layer that emits IR light is added to the light-emitting unit X.

[0203] 8A shows a cross-sectional view taken along dashed line X1-X2 in FIG. 5B, FIG. 8B shows a cross-sectional view taken along dashed line X3-X4 in FIG. 5B, and FIG. 8C shows a cross-sectional view taken along dashed line X5-X6 in FIG. 5B.

[0204] The cross-sectional structure shown in Figure 8A differs from Figure 7A in that the subpixel 110S1 does not have a colored layer 132V. The cross-sectional structure shown in Figure 8B is the same as Figure 7B. The cross-sectional structure shown in Figure 8C differs from Figure 7C in that the subpixel 110S2 does not have the second layer 113b but has the fourth layer 113d.

[0205] The configurations shown in FIGS. 8A and 8C are examples in which the subpixel 110S1 and the subpixel 110S2 use light receiving devices with different configurations.

[0206] Regarding the configuration of the subpixels 110R, 110G, 110B, and 110IR, detailed description of the parts that are the same as those in FIGS. 7A and 7B will be omitted.

[0207] In the subpixel 110S1, the light receiving device 150a having the second layer 113b can be used to detect infrared light.

[0208] In the subpixel 110S2, the light receiving device 150b having the fourth layer 113d can be used to detect visible light.

[0209] By separately fabricating the second layer 113b and the fourth layer 113d, the light-receiving device 150a is configured to detect infrared light, and the light-receiving device 150b is configured to detect visible light. Therefore, in Figures 8A and 8C, it is not necessary to provide a colored layer in both the subpixels 110S1 and 110S2.

[0210] 5A and 5B, the display device has an insulating layer provided on a layer 101 including transistors, a light-emitting device and a light-receiving device provided on the insulating layer, and a protective layer 131 provided to cover the light-emitting device and the light-receiving device. Colored layers 132R, 132G, and 132B are provided on the protective layer 131, and the substrate 120 is bonded to the protective layer 131 by a resin layer 122. In addition, an insulating layer 125 and an insulating layer 127 on the insulating layer 125 are provided in the regions between adjacent light-emitting devices and between the light-emitting device and the light-receiving device.

[0211] 5A and 5B, multiple cross sections of insulating layer 125 and insulating layer 127 are shown, but when the display device is viewed from above, insulating layer 125 and insulating layer 127 are each connected to one another. That is, the display device can be configured to have, for example, one insulating layer 125 and one insulating layer 127. Note that the display device may have multiple insulating layers 125 that are separated from one another, or may have multiple insulating layers 127 that are separated from one another.

[0212] The layer 101 including transistors can have, for example, a stacked structure in which a plurality of transistors are provided on a substrate and an insulating layer is provided to cover the transistors. The insulating layer over the transistors may have a single-layer structure or a stacked structure. In FIG. 5A and other drawings, the insulating layers over the transistors are shown as an insulating layer 255a, an insulating layer 255b over the insulating layer 255a, and an insulating layer 255c over the insulating layer 255b. These insulating layers may have recesses between adjacent light-emitting devices and between the light-emitting device and the light-receiving device. In FIG. 5A and other drawings, an example is shown in which a recess is provided in the insulating layer 255c. Note that the insulating layers over the transistors (insulating layers 255a to 255c) may also be considered as part of the layer 101 including transistors.

[0213] The insulating layers 255a, 255b, and 255c can be formed using various inorganic insulating films such as an oxide insulating film, a nitride insulating film, an oxynitride insulating film, and a nitride oxide insulating film. The insulating layers 255a and 255c are preferably formed using an oxide insulating film or an oxynitride insulating film such as a silicon oxide film, a silicon oxynitride film, or an aluminum oxide film. The insulating layer 255b is preferably formed using a nitride insulating film or a nitride oxide insulating film such as a silicon nitride film or a silicon nitride oxide film. More specifically, the insulating layers 255a and 255c are preferably formed using silicon oxide films, and the insulating layer 255b is preferably formed using a silicon nitride film. The insulating layer 255b preferably functions as an etching protective film.

[0214] In this specification and the like, an oxynitride refers to a material whose composition contains more oxygen than nitrogen, and a nitride oxide refers to a material whose composition contains more nitrogen than oxygen. For example, silicon oxynitride refers to a material whose composition contains more oxygen than nitrogen, and silicon nitride oxide refers to a material whose composition contains more nitrogen than oxygen.

[0215] A structural example of the layer 101 including a transistor will be described later in Embodiment 3 and Embodiment 4.

[0216] It is preferable that the light-emitting device and the light-receiving device have a protective layer 131. The reliability of the light-emitting device and the light-receiving device can be improved by providing the protective layer 131. The protective layer 131 may have a single-layer structure or a laminated structure of two or more layers.

[0217] There is no restriction on the conductivity of the protective layer 131. The protective layer 131 can be made of at least one of an insulating film, a semiconductor film, and a conductive film.

[0218] The protective layer 131 has an inorganic film, which prevents oxidation of the common electrode 115 and prevents impurities (moisture, oxygen, etc.) from entering the light-emitting device and the light-receiving device, thereby suppressing deterioration of the light-emitting device and improving the reliability of the display device.

[0219] The protective layer 131 can be made of an inorganic insulating film such as an insulating oxide film, an insulating nitride film, an insulating oxynitride film, or an insulating nitride oxide film. Examples of insulating oxide films include a silicon oxide film, an aluminum oxide film, a magnesium oxide film, a gallium oxide film, a germanium oxide film, an yttrium oxide film, a zirconium oxide film, a lanthanum oxide film, a neodymium oxide film, a hafnium oxide film, and a tantalum oxide film. Examples of insulating nitride films include a silicon nitride film and an aluminum nitride film. Examples of insulating oxynitride films include a silicon oxynitride film and an aluminum oxynitride film. Examples of insulating nitride oxide films include a silicon nitride oxide film and an aluminum nitride oxide film.

[0220] In particular, the protective layer 131 preferably has an insulating nitride film or an insulating nitride oxide film, and more preferably has an insulating nitride film.

[0221] Alternatively, an inorganic film containing In-Sn oxide (also referred to as ITO), In-Zn oxide, Ga-Zn oxide, Al-Zn oxide, or indium gallium zinc oxide (In-Ga-Zn oxide, also referred to as IGZO) can be used for the protective layer 131. The inorganic film preferably has high resistance, specifically, preferably has higher resistance than the common electrode 115. The inorganic film may further contain nitrogen.

[0222] When light emitted from the light-emitting device is extracted through the protective layer 131, it is preferable that the protective layer 131 has high transparency to visible light. For example, ITO, IGZO, and aluminum oxide are preferable because they are inorganic materials that have high transparency to visible light.

[0223] The protective layer 131 may be, for example, a laminated structure of an aluminum oxide film and a silicon nitride film on the aluminum oxide film, or a laminated structure of an aluminum oxide film and an IGZO film on the aluminum oxide film. By using such a laminated structure, impurities (water, oxygen, etc.) can be prevented from entering the EL layer side.

[0224] Furthermore, the protective layer 131 may include an organic film. For example, the protective layer 131 may include both an organic film and an inorganic film.

[0225] The protective layer 131 may have a two-layer structure formed using different film formation methods. Specifically, the first layer of the protective layer 131 may be formed using atomic layer deposition (ALD), and the second layer of the protective layer 131 may be formed using sputtering.

[0226] The side surfaces of the first layer 113a, the second layer 113b, and the third layer 113c are covered with the insulating layer 125 and the insulating layer 127. This prevents the common layer 114 (or the common electrode 115) from coming into contact with the side surfaces of the pixel electrode, the first layer 113a, the second layer 113b, and the third layer 113c, thereby preventing short circuits in the light-emitting device and the light-receiving device. This improves the reliability of the light-emitting device and the light-receiving device.

[0227] The insulating layer 125 can be configured to contact the side surfaces of the first layer 113a, the second layer 113b, and the third layer 113c. By configuring the insulating layer 125 or the insulating layer 127 to contact the first layer 113a, the second layer 113b, and the third layer 113c, peeling of the first layer 113a, the second layer 113b, and the third layer 113c can be prevented. The insulating layer is in close contact with the first layer 113a, the second layer 113b, or the third layer 113c, thereby fixing or bonding adjacent first layers 113a, etc., by the insulating layer. This improves the reliability of light-emitting devices and light-receiving devices. It also improves the manufacturing yield of light-emitting devices and light-receiving devices.

[0228] 5A and 5B, etc. show a configuration in which the end of the pixel electrode is covered by the first layer 113a, the second layer 113b, or the third layer 113c, and the insulating layer 125 is in contact with the side surfaces of the first layer 113a, the second layer 113b, and the third layer 113c.

[0229] The insulating layer 127 is provided on the insulating layer 125 so as to fill the recesses of the insulating layer 125. The insulating layer 127 can be configured to overlap (or cover) the side surfaces of the first layer 113a, the second layer 113b, and the third layer 113c via the insulating layer 125. The insulating layer 127 may further overlap the side surfaces of the pixel electrodes via the insulating layer 125.

[0230] By providing the insulating layers 125 and 127, the gaps between adjacent island-shaped layers can be filled, thereby reducing unevenness on the surface on which layers (e.g., a carrier injection layer, a common electrode, etc.) are formed on the island-shaped layers, and making the surface flatter. Therefore, the coverage of the carrier injection layer, the common electrode, etc. can be improved, and step discontinuity of the common electrode can be prevented. Note that in this specification and the like, step discontinuity refers to a phenomenon in which a layer, a film, or an electrode is divided due to the shape of the surface on which it is formed (e.g., a step, etc.).

[0231] The common layer 114 and the common electrode 115 are provided over the first layer 113a, the second layer 113b, the third layer 113c, the insulating layer 125, and the insulating layer 127. Before the insulating layer 125 and the insulating layer 127 are provided, steps are generated between a region where the pixel electrode and the first layer 113a, the second layer 113b, or the third layer 113c are provided and a region where they are not provided (a region between light-emitting devices, a region between light-receiving devices, and a region between a light-emitting device and a light-receiving device). The display device of one embodiment of the present invention includes the insulating layer 125 and the insulating layer 127, which can flatten the steps and improve the coverage of the common layer 114 and the common electrode 115. Therefore, poor connection due to a step in the common electrode 115 can be suppressed. Furthermore, the step can be suppressed from locally thinning the common electrode 115, thereby suppressing an increase in electrical resistance.

[0232] Various shapes can be applied to the insulating layer 125 and the insulating layer 127. In order to improve the flatness of the surfaces on which the common layer 114 and the common electrode 115 are formed, it is preferable that the height of the upper surface of the insulating layer 125 and the upper surface of the insulating layer 127 match or approximately match the height of the upper surfaces of the first layer 113a, the second layer 113b, and the third layer 113c at their respective ends (which can also be referred to as the height of the ends of the upper surfaces). Furthermore, the upper surface of the insulating layer 127 may have a flat shape, or may have a convex portion, a convex curved surface, a concave curved surface, or a concave portion.

[0233] 5A and 5B, the mask layer 118a is located over the first layer 113a, the mask layer 118b is located over the second layer 113b, and the mask layer 118c is located over the third layer 113c. In FIG. 8C, the mask layer 118d is located over the fourth layer 113d. In FIG. 5A, one end of the mask layer 118a is aligned or approximately aligned with an end of the first layer 113a, and the other end of the mask layer 118a is located over the first layer 113a. In this manner, in the display device of one embodiment of the present invention, the mask layers used to protect the first layer 113a, the second layer 113b, and the third layer 113c used during the manufacturing process may remain partially. The mask layer may remain, for example, between the first layer 113a, the second layer 113b, or the third layer 113c and the insulating layer 125 or the insulating layer 127. The mask layer will be described in detail in the second embodiment.

[0234] 9A to 9C show the cross-sectional structure of a region including the insulating layer 127 and its surroundings.

[0235] 9A to 9C, the pixel electrodes 111a and 111b have a tapered shape. A first layer 113a is provided to cover the end of the pixel electrode 111a, and the first layer 113a also has a tapered portion. Similarly, a second layer 113b is provided to cover the end of the pixel electrode 111b, and the second layer 113b also has a tapered portion.

[0236] A mask layer 118a is provided on the first layer 113a, and the mask layer 118a has a portion that overlaps with the pixel electrode 111a or the pixel electrode 111b through the first layer 113a. Note that the mask layer 118a does not necessarily have a portion that overlaps with the pixel electrode 111a or the pixel electrode 111b.

[0237] An insulating layer 125 is provided to cover the first layer 113a, the mask layer 118a, and the insulating layer 255c. The insulating layer 125 is in contact with the upper and side surfaces of the mask layer 118a, the side surfaces of the first layer 113a, and the upper surface of the insulating layer 255c. An insulating layer 127 is provided on the insulating layer 125. The insulating layer 127 overlaps with each of the pixel electrodes 111a and 111b, the first layer 113a, and the mask layer 118a, with the insulating layer 125 interposed therebetween.

[0238] By covering not only the side surfaces but also the top surface of the first layer 113a with one or both of the insulating layers 125 and 127, peeling of the first layer 113a can be more effectively prevented, thereby improving the reliability of the light-emitting device. Furthermore, the manufacturing yield of the light-emitting device can be further improved. The insulating layers 125 and 127 do not necessarily overlap with the pixel electrodes 111a and 111b, the first layer 113a, and the mask layer 118a.

[0239] A common layer 114 and a common electrode 115 are provided on the first layer 113 a and the insulating layer 127 .

[0240] 9A shows an example in which the edges of the mask layer 118a and the insulating layer 125 are approximately perpendicular to the surface of the first layer 113a. As shown in FIG. 9B, the edges of the mask layer 118a and the insulating layer 125 preferably have a tapered shape. This can further improve the coverage of the common layer 114 and the common electrode 115.

[0241] 9A shows an example in which the upper surface of the insulating layer 127 has a convex curve. As shown in FIG. 9C, the upper surface of the insulating layer 127 may have both a convex curve and a concave curve.

[0242] The insulating layer 125 can be an insulating layer containing an inorganic material. The insulating layer 125 may have a single-layer structure or a multilayer structure. For the insulating layer 125, for example, an inorganic insulating film such as an insulating oxide film, an insulating nitride film, an insulating oxynitride film, or an insulating nitride oxide film can be used. Details of these inorganic insulating films are as described in the description of the protective layer 131.

[0243] In particular, aluminum oxide is preferable because it has a high etching selectivity with respect to the EL layer and has the function of protecting the EL layer when the insulating layer 127 is formed. In particular, by using an inorganic insulating film such as an aluminum oxide film, a hafnium oxide film, or a silicon oxide film formed by the ALD method as the insulating layer 125, it is possible to form the insulating layer 125 with few pinholes and excellent function of protecting the EL layer. The insulating layer 125 may also have a stacked structure of a film formed by the ALD method and a film formed by the sputtering method. For example, the insulating layer 125 may have a stacked structure of an aluminum oxide film formed by the ALD method and a silicon nitride film formed by the sputtering method.

[0244] The insulating layer 125 preferably functions as a barrier insulating layer against at least one of water and oxygen. The insulating layer 125 preferably has a function of suppressing diffusion of at least one of water and oxygen. The insulating layer 125 preferably has a function of capturing or fixing (also referred to as gettering) at least one of water and oxygen.

[0245] In this specification and the like, a barrier insulating layer refers to an insulating layer having barrier properties. In addition, in this specification and the like, the barrier properties refer to a function of suppressing the diffusion of a corresponding substance (also referred to as low permeability) or a function of capturing or fixing (also referred to as gettering) a corresponding substance.

[0246] The insulating layer 125 has a function as a barrier insulating layer or a gettering function, which makes it possible to suppress the intrusion of impurities (typically, at least one of water and oxygen) that may diffuse from the outside into the light-emitting device and the light-receiving device. With this configuration, it is possible to provide a highly reliable light-emitting device and a light-receiving device, as well as a highly reliable display device.

[0247] The insulating layer 125 preferably has a low impurity concentration. This can prevent impurities from entering the EL layer from the insulating layer 125 and causing deterioration of the EL layer. Furthermore, by reducing the impurity concentration in the insulating layer 125, the barrier properties against at least one of water and oxygen can be improved. For example, it is desirable that the insulating layer 125 has a sufficiently low hydrogen concentration or a sufficiently low carbon concentration, preferably both.

[0248] The insulating layer 127 provided on the insulating layer 125 has the function of flattening recesses formed in the insulating layer 125 between adjacent light-emitting devices. In other words, the insulating layer 127 improves the flatness of the surface on which the common electrode 115 is formed. An insulating layer containing an organic material can be suitably used as the insulating layer 127. For example, acrylic resin, polyimide resin, epoxy resin, imide resin, polyamide resin, polyimideamide resin, silicone resin, siloxane resin, benzocyclobutene-based resin, phenolic resin, and precursors of these resins can be used as the insulating layer 127. Alternatively, organic materials such as polyvinyl alcohol (PVA), polyvinyl butyral, polyvinylpyrrolidone, polyethylene glycol, polyglycerin, pullulan, water-soluble cellulose, or alcohol-soluble polyamide resin can be used as the insulating layer 127. Alternatively, a photosensitive resin can be used as the photosensitive resin. A photoresist can be used as the photosensitive resin. A positive-type material or a negative-type material can be used as the photosensitive resin.

[0249] The insulating layer 127 may be made of a material that absorbs visible light. By having the insulating layer 127 absorb light emitted from the light-emitting device, it is possible to prevent light from leaking from the light-emitting device to an adjacent light-emitting device through the insulating layer 127 (stray light). This makes it possible to improve the display quality of the display device. Furthermore, since the display quality can be improved without using a polarizing plate in the display device, it is possible to reduce the weight and thickness of the display device. Furthermore, it is possible to prevent light from entering an adjacent light-receiving device through the insulating layer 127 from the light-emitting device. This makes it possible to improve the accuracy of light detection of the display device.

[0250] Examples of materials that absorb visible light include materials containing pigments such as black, materials containing dyes, resin materials with light absorption properties (such as polyimide), and resin materials that can be used for color filters (color filter materials). In particular, it is preferable to use a resin material in which two or more color filter materials are laminated or mixed, as this can enhance the visible light blocking effect.

[0251] If the side surfaces of the first layer 113a, the second layer 113b, and the third layer 113c are in direct contact with an organic resin film, organic solvents contained in the organic resin film may damage these layers. By providing the insulating layer 125 (i.e., an inorganic insulating film), a configuration can be achieved in which the organic resin film and the side surfaces of the first layer 113a, the second layer 113b, and the third layer 113c are not in direct contact with each other. This makes it possible to prevent the first layer 113a, the second layer 113b, and the third layer 113c from being dissolved in an organic solvent.

[0252] A light-shielding layer may be provided on the surface of the substrate 120 facing the resin layer 122. Various optical members may be arranged on the outside of the substrate 120. Examples of optical members include a polarizing plate, a retardation plate, a light diffusion layer (such as a diffusion film), an anti-reflection layer, and a light-collecting film. Furthermore, a surface protection layer such as an anti-static film that suppresses the adhesion of dust, a water-repellent film that makes it difficult for dirt to adhere, a hard coat film that suppresses the occurrence of scratches during use, or an impact absorbing layer may be arranged on the outside of the substrate 120. For example, a glass layer or a silica layer (SiO x The surface protection layer can be preferably formed of a material such as DLC (diamond-like carbon), aluminum oxide (AlO x ), polyester-based materials, or polycarbonate-based materials may also be used. Note that it is preferable to use a material with high transmittance to visible light for the surface protection layer. It is also preferable to use a material with high hardness for the surface protection layer.

[0253] The substrate 120 can be made of glass, quartz, ceramics, sapphire, resin, metal, alloy, semiconductor, or the like. A material that transmits light is used for the substrate on the side from which light from the light-emitting device is extracted. Using a flexible material for the substrate 120 increases the flexibility of the display device, making it possible to realize a flexible display. A polarizing plate may also be used for the substrate 120.

[0254] The substrate 120 can be made of polyester resin such as polyethylene terephthalate (PET) or polyethylene naphthalate (PEN), polyacrylonitrile resin, acrylic resin, polyimide resin, polymethyl methacrylate resin, polycarbonate (PC) resin, polyethersulfone (PES) resin, polyamide resin (nylon, aramid, etc.), polysiloxane resin, cycloolefin resin, polystyrene resin, polyamideimide resin, polyurethane resin, polyvinyl chloride resin, polyvinylidene chloride resin, polypropylene resin, polytetrafluoroethylene (PTFE) resin, ABS resin, cellulose nanofiber, etc. The substrate 120 can also be made of glass having a thickness sufficient to provide flexibility.

[0255] When a circularly polarizing plate is superimposed on a display device, it is preferable that the display device has a substrate with high optical isotropy. A substrate with high optical isotropy has small birefringence (or a small amount of birefringence).

[0256] The absolute value of the retardation (phase difference) of a substrate having high optical isotropy is preferably 30 nm or less, more preferably 20 nm or less, and even more preferably 10 nm or less.

[0257] Examples of films with high optical isotropy include triacetyl cellulose (TAC, also known as cellulose triacetate) films, cycloolefin polymer (COP) films, cycloolefin copolymer (COC) films, and acrylic films.

[0258] Furthermore, when a film is used as a substrate, the film may absorb water, causing changes in shape, such as wrinkles, in the display device. Therefore, it is preferable to use a film with low water absorption for the substrate. For example, it is preferable to use a film with a water absorption rate of 1% or less, more preferably 0.1% or less, and even more preferably 0.01% or less.

[0259] The resin layer 122 can be made of various curable adhesives, such as a photo-curable adhesive (e.g., an ultraviolet curable adhesive), a reactive curable adhesive, a thermosetting adhesive, or an anaerobic adhesive. Examples of such adhesives include epoxy resin, acrylic resin, silicone resin, phenolic resin, polyimide resin, imide resin, PVC (polyvinyl chloride) resin, PVB (polyvinyl butyral) resin, and EVA (ethylene vinyl acetate) resin. In particular, a material with low moisture permeability, such as epoxy resin, is preferable. Alternatively, a two-component resin may be used. Alternatively, an adhesive sheet or the like may be used.

[0260] Materials that can be used for conductive layers such as the gate, source, and drain of a transistor, as well as various wirings and electrodes that constitute a display device include, for example, metals such as aluminum, titanium, chromium, nickel, copper, yttrium, zirconium, molybdenum, silver, tantalum, and tungsten, and alloys containing these metals as the main component. A film containing one or more of these materials can be used as a single layer or a stacked structure.

[0261] Examples of light-transmitting conductive materials include conductive oxides such as indium oxide, indium tin oxide, indium zinc oxide, zinc oxide, and zinc oxide containing gallium, or graphene. Alternatively, metal materials such as gold, silver, platinum, magnesium, nickel, tungsten, chromium, molybdenum, iron, cobalt, copper, palladium, and titanium, or alloy materials containing such metal materials, can be used. Alternatively, nitrides of such metal materials (e.g., titanium nitride) can be used. When using metal materials or alloy materials (or their nitrides), it is preferable to thin them sufficiently to ensure light-transmitting properties. A stacked film of the above materials can also be used as the conductive layer. For example, a stacked film of an alloy of silver and magnesium and indium tin oxide is preferable because it can enhance conductivity. These materials can also be used for conductive layers such as various wirings and electrodes constituting display devices, and conductive layers (conductive layers functioning as pixel electrodes or counter electrodes) in light-emitting devices.

[0262] Examples of insulating materials that can be used for each insulating layer include resins such as acrylic resin and epoxy resin, and inorganic insulating materials such as silicon oxide, silicon oxynitride, silicon nitride oxide, silicon nitride, and aluminum oxide.

[0263] 5A and other figures show an example in which colored layers 132R, 132G, and 132B are provided directly on light-emitting devices 130R, 130G, and 130B, with a protective layer 131 interposed therebetween. This configuration improves the accuracy of alignment between the light-emitting devices and the colored layers. Furthermore, by positioning the light-emitting devices and the colored layers closer to each other, color mixing can be suppressed and viewing angle characteristics can be improved, which is preferable.

[0264] 10A to 10C are cross-sectional views taken along the dashed dotted line X1-X2 in FIG. 1B.

[0265] 10A, the substrate 120 provided with the colored layer may be bonded to the protective layer 131 with a resin layer 122. By providing the colored layer on the substrate 120, the temperature of the heat treatment in the step of forming the colored layer can be increased.

[0266] 10B and 10C, the display device may be provided with a lens array 133. The lens array 133 may be provided so as to overlap one or both of the light-emitting device and the light-receiving device.

[0267] 10B shows an example in which colored layers 132R and 132G are provided on the light-emitting devices 130R and 130G via a protective layer 131, an insulating layer 134 is provided on the colored layers 132R and 132G, and a lens array 133 is provided on the insulating layer 134. Also in FIG. 10B, the lens array 133 is provided also on the light-receiving device 150a via the protective layer 131 and the insulating layer 134. By forming the colored layers 132R and 132G and the lens array 133 directly on the substrate on which the light-emitting devices and the light-receiving devices are formed, it is possible to improve the accuracy of alignment between the light-emitting devices or the light-receiving devices and the colored layers or the lens array.

[0268] The insulating layer 134 can be made of either or both of an inorganic insulating film and an organic insulating film. The insulating layer 134 may have a single-layer structure or a multi-layer structure. For example, the same materials that can be used for the protective layer 131 can be used for the insulating layer 134. Since light emitted from the light-emitting device is extracted through the insulating layer 134, it is preferable that the insulating layer 134 have high transparency to visible light.

[0269] 10B, light emitted from the light-emitting device passes through the colored layer and then passes through the lens array 133 to be extracted to the outside of the display device. By positioning the light-emitting device and the colored layer close to each other, color mixing can be suppressed and viewing angle characteristics can be improved, which is preferable. Alternatively, the lens array 133 may be provided on the light-emitting device, and the colored layer may be provided on the lens array 133.

[0270] 10C shows an example in which a substrate 120 provided with a colored layer 132R, a colored layer 132G, and a lens array 133 is bonded onto a protective layer 131 by a resin layer 122. By providing the colored layer 132R, the colored layer 132G, and the lens array 133 on the substrate 120, the temperature of the heat treatment in the formation process of these layers can be increased.

[0271] 10C shows an example in which colored layers 132R and 132G are provided in contact with the substrate 120, an insulating layer is provided in contact with the colored layers 132R and 132G, and a lens array 133 is provided in contact with the insulating layer .

[0272] In FIG. 10C , light emitted from the light-emitting device passes through the lens array 133, then passes through the colored layer, and is extracted to the outside of the display device. Alternatively, the lens array 133 may be provided in contact with the substrate 120, the insulating layer 134 may be provided in contact with the lens array 133, and the colored layer may be provided in contact with the insulating layer 134. In this case, light emitted from the light-emitting device passes through the colored layer, then passes through the lens array 133, and is extracted to the outside of the display device. As shown in FIGS. 10B and 10C , it is preferable to provide an area where the colored layer 132R and the colored layer 132G overlap between the lens array 133 and an adjacent lens array 133. By providing an area where the colored layers of different colors overlap, color mixing of the light emitted from the light-emitting device can be suppressed.

[0273] The convex surface of the lens array 133 may face the substrate 120 side or the light-emitting device side.

[0274] The lens array 133 can be formed using at least one of an inorganic material and an organic material. For example, a material containing a resin can be used for the lenses. Also, a material containing at least one of an oxide and a sulfide can be used for the lenses. For example, a microlens array can be used as the lens array 133. The lens array 133 can be formed directly on the substrate or the light-emitting device, or a separately formed lens array can be attached thereto.

[0275] The width relationship between the pixel electrodes 111a, 111b, and 111c and the first layer 113a is not particularly limited. The width relationship between the pixel electrode 111d and the second layer 113b is not particularly limited. The width relationship between the pixel electrode 111e and the first layer 113a or the third layer 113c is not particularly limited. The width relationship between the pixel electrode 111f and the second layer 113b or the fourth layer 113d is not particularly limited. For example, FIG. 5A shows an example in which the ends of the first layer 113a and the second layer 113b are located outside the ends of the pixel electrodes. In FIG. 5A, the first layer 113a and the second layer 113b are formed to cover the ends of the pixel electrodes. This configuration can increase the aperture ratio compared to a configuration in which the ends of the first layer 113a and the second layer 113b are located inside the ends of the pixel electrodes.

[0276] Furthermore, by covering the side surface of the pixel electrode with any of the first to fourth layers 113a to 113d, contact between the pixel electrode and the common electrode 115 can be prevented, thereby preventing short-circuiting of the light-emitting device and the light-receiving device. Furthermore, the distance between the light-emitting region of the first layer 113a (i.e., the region overlapping with the pixel electrode) and the edge of the first layer 113a can be increased. The edge of the first layer 113a includes a portion that may have been damaged during the manufacturing process of the display device. By not using this portion as the light-emitting region, variations in the characteristics of the light-emitting device can be suppressed, thereby improving reliability. Similarly, the distance between the light-receiving region of the second layer 113b (i.e., the region overlapping with the pixel electrode) and the edge of the second layer 113b can be increased, thereby improving reliability. The same can be said for the third layer 113c and the fourth layer 113d.

[0277] 11A and 11B show a cross-sectional view taken along the dashed dotted line X1-X2 in FIG. 1B and a cross-sectional view taken along the dashed dotted line Y1-Y2 in FIG. 1A side by side.

[0278] 11A shows an example in which the edge of the upper surface of the pixel electrode is aligned or approximately aligned with the edge of the first layer 113a and the edge of the second layer 113b. FIG. 11A shows an example in which the edge of the first layer 113a and the edge of the second layer 113b are located more inward than the edge of the lower surface of the pixel electrode. FIG. 11B shows an example in which the edge of the first layer 113a and the edge of the second layer 113b are located more inward than the edge of the upper surface of the pixel electrode. In both FIGS. 11A and 11B, the edge of the first layer 113a and the edge of the second layer 113b are located on the pixel electrode.

[0279] As shown in Figures 11A and 11B, when the ends of the first layer 113a and the second layer 113b are located on the pixel electrode, the thickness of the first layer 113a and the second layer 113b can be prevented from becoming thin at the ends of the pixel electrode and in their vicinity, and the thickness of the first layer 113a and the second layer 113b can be made uniform.

[0280] In addition, when the edges are aligned or approximately aligned, and when the top surface shapes are the same or approximately aligned, it can be said that at least a portion of the contours of the stacked layers overlap when viewed from above. For example, this includes cases where the upper and lower layers are processed using the same mask pattern or a portion of the same mask pattern. However, strictly speaking, the contours may not overlap, and the upper layer may be located inside the lower layer, or outside the lower layer. In these cases, it is also said that the edges are approximately aligned, or the top surface shapes are approximately aligned.

[0281] Furthermore, the end of the first layer 113a and the end of the second layer 113b may each have both a portion located outside the end of the pixel electrode and a portion located inside the end of the pixel electrode.

[0282] 12A to 12C show a cross-sectional view taken along the dashed dotted line X1-X2 in FIG. 1B and a cross-sectional view taken along the dashed dotted line Y1-Y2 in FIG. 1A side by side.

[0283] 12A to 12C, an insulating layer 121 may be provided to cover the upper surface edge of the pixel electrode. The first layer 113a and the second layer 113b may each have a portion in contact with the pixel electrode and a portion in contact with the insulating layer 121. The insulating layer 121 may have a single-layer structure or a multi-layer structure using either or both of an inorganic insulating film and an organic insulating film.

[0284] Examples of organic insulating materials that can be used for the insulating layer 121 include acrylic resin, epoxy resin, polyimide resin, polyamide resin, polyimideamide resin, polysiloxane resin, benzocyclobutene resin, and phenol resin. In addition, as the inorganic insulating film that can be used for the insulating layer 121, the inorganic insulating film that can be used for the protective layer 131 can be used.

[0285] When an inorganic insulating film is used as the insulating layer 121, impurities are less likely to enter the light-emitting device and the light-receiving device than when an organic insulating film is used, thereby improving the reliability of the light-emitting device and the light-receiving device. Furthermore, the insulating layer 121 can be made thinner, making it easier to achieve higher definition. On the other hand, when an organic insulating film is used as the insulating layer 121, it has better step coverage and is less affected by the shape of the pixel electrode than when an inorganic insulating film is used. Therefore, short circuits in the light-emitting device and the light-receiving device can be prevented. Specifically, when an organic insulating film is used as the insulating layer 121, the shape of the insulating layer 121 can be processed into a tapered shape, etc.

[0286] Note that the insulating layer 121 does not necessarily have to be provided. By not providing the insulating layer 121, the aperture ratio of the subpixels can be increased in some cases. Alternatively, the distance between the subpixels can be narrowed in some cases, thereby improving the definition or resolution of the display device.

[0287] 12A shows an example in which common layer 114 penetrates into the region between two first layers 113a on insulating layer 121. As shown in FIG. 12B, a gap 135 may be formed in this region.

[0288] The void 135 contains, for example, one or more selected from air, nitrogen, oxygen, carbon dioxide, and Group 18 elements (typically, helium, neon, argon, xenon, krypton, etc.). Alternatively, a resin or the like may be embedded in the void 135.

[0289] 12C, an insulating layer 125 may be provided so as to cover the upper surface of insulating layer 121, the side surfaces of first layer 113a, and the side surfaces of second layer 113b, and an insulating layer 127 may be provided on insulating layer 125.

[0290] 13A to 13C show a cross-sectional view taken along the dashed dotted line X1-X2 in FIG. 1B and a cross-sectional view taken along the dashed dotted line Y1-Y2 in FIG. 1A side by side.

[0291] As shown in Fig. 13A, the display device does not necessarily have the insulating layer 125 and the insulating layer 127. Fig. 13A shows an example in which the common layer 114 is provided in contact with the top surface of the insulating layer 255c, the side surfaces and top surface of the first layer 113a, and the side surfaces and top surface of the second layer 113b. Note that, as shown in Fig. 12B, a gap 135 may be provided between adjacent first layers 113a.

[0292] Note that either the insulating layer 125 or the insulating layer 127 does not necessarily have to be provided. For example, by forming the insulating layer 125 using an inorganic material, the insulating layer 125 can be used as a protective insulating layer for the first layer 113a and the second layer 113b. This can improve the reliability of the display device. Furthermore, by forming the insulating layer 127 using an organic material, for example, the insulating layer 127 can fill the gaps between the adjacent first layers 113a and achieve planarization. This can improve the coverage of the common electrode 115 (upper electrode) formed on the first layer 113a, the second layer 113b, and the insulating layer 127.

[0293] Fig. 13B shows an example in which no insulating layer 127 is provided. Note that Fig. 13B shows an example in which common layer 114 fills the recessed portion of insulating layer 125, but a gap may be formed in that region.

[0294] 13C shows an example in which the insulating layer 125 is not provided. When the insulating layer 125 is not provided, the insulating layer 127 can be configured to be in contact with the side surfaces of the first layer 113a and the second layer 113b. The insulating layer 127 can be provided so as to fill the gaps between adjacent first layers 113a.

[0295] In this case, it is preferable to use an organic material that causes less damage to the first layer 113a and the second layer 113b for the insulating layer 127. For example, it is preferable to use an organic material such as polyvinyl alcohol (PVA), polyvinyl butyral, polyvinylpyrrolidone, polyethylene glycol, polyglycerin, pullulan, water-soluble cellulose, or alcohol-soluble polyamide resin for the insulating layer 127.

[0296] As described above, the display device of this embodiment has, in each pixel, sub-pixels having light-emitting devices used for image display, sub-pixels having light-emitting devices used as light sources, and sub-pixels having light-receiving devices. The sub-pixels having light-receiving devices include two types of sub-pixels that detect at least part of a wavelength range different from each other. This allows for multi-functionality of electronic devices.

[0297] This embodiment mode can be combined with other embodiment modes as appropriate. In addition, in this specification, when a plurality of configuration examples are shown in one embodiment mode, the configuration examples can be combined as appropriate.

[0298] (Embodiment 2) In this embodiment, a manufacturing method of a display device according to one embodiment of the present invention will be described with reference to FIGS. 14 to 16. Note that description of materials and formation methods of elements similar to those described in Embodiment 1 may be omitted. In addition, the details of the structures of a light-emitting device and a light-receiving device will be described in Embodiments 4 and 5.

[0299] 14A to 14D, 15A to 15C, and 16A to 16C show cross-sectional views of the six types of sub-pixels shown in FIG. 1B and cross-sectional views taken along the dashed dotted line Y1-Y2 shown in FIG. 1A side by side.

[0300] Thin films (insulating films, semiconductor films, conductive films, etc.) that make up display devices can be formed using methods such as sputtering, chemical vapor deposition (CVD), vacuum evaporation, pulsed laser deposition (PLD), and atomic layer deposition (ALD). CVD methods include plasma enhanced chemical vapor deposition (PECVD) and thermal CVD. One type of thermal CVD method is metal organic chemical vapor deposition (MOCVD).

[0301] Furthermore, thin films (insulating films, semiconductor films, conductive films, etc.) that constitute the display device can be formed by wet film formation methods such as spin coating, dipping, spray coating, inkjet, dispensing, screen printing, offset printing, doctor knife method, slit coating, roll coating, curtain coating, or knife coating.

[0302] In particular, vacuum processes such as vapor deposition and solution processes such as spin coating and inkjet printing can be used to fabricate light-emitting devices. Vapor deposition methods include physical vapor deposition (PVD) methods such as sputtering, ion plating, ion beam deposition, molecular beam deposition, and vacuum deposition, as well as chemical vapor deposition (CVD). In particular, functional layers included in the EL layer (e.g., hole injection layer, hole transport layer, hole blocking layer, light-emitting layer, electron blocking layer, electron transport layer, electron injection layer, charge generation layer) can be formed by vapor deposition (e.g., vacuum deposition), coating methods (e.g., dip coating, die coating, bar coating, spin coating, spray coating), printing methods (e.g., inkjet printing, screen printing, offset printing, flexography, gravure printing, microcontact printing, etc.).

[0303] Furthermore, when processing the thin film that constitutes the display device, a photolithography method or the like can be used. Alternatively, the thin film may be processed by a nanoimprint method, a sandblasting method, a lift-off method, or the like. Furthermore, the island-shaped thin film may be directly formed by a film formation method using a shielding mask such as a metal mask.

[0304] There are two typical photolithography methods: One is a method in which a resist mask is formed on the thin film to be processed, the thin film is processed by etching or the like, and the resist mask is then removed. The other is a method in which a photosensitive thin film is formed, and then the thin film is exposed to light and developed to be processed into the desired shape.

[0305] In photolithography, the light used for exposure can be, for example, i-line (wavelength 365 nm), g-line (wavelength 436 nm), h-line (wavelength 405 nm), or a mixture of these. Other light sources that can be used include ultraviolet light, KrF laser light, and ArF laser light. Exposure can also be performed using immersion exposure technology. Extreme ultraviolet (EUV) light or X-rays can also be used as the light used for exposure. Instead of light used for exposure, an electron beam can also be used. Extreme ultraviolet light, X-rays, or an electron beam are preferred because they enable extremely fine processing. When exposure is performed by scanning a beam such as an electron beam, a photomask is not required.

[0306] For etching the thin film, dry etching, wet etching, sandblasting, or the like can be used.

[0307] First, pixel electrodes 111a, 111b, 111c, 111d, 111e, and 111f and a conductive layer 123 are formed over the transistor-containing layer 101 (FIG. 14A). The pixel electrodes can be formed by, for example, sputtering or vacuum evaporation.

[0308] As shown in FIG. 14A, pixel electrode 111a is provided in a region that will become sub-pixel 110R that emits red light, pixel electrode 111b is provided in a region that will become sub-pixel 110G that emits green light, pixel electrode 111c is provided in a region that will become sub-pixel 110B that emits blue light, pixel electrode 111d is provided in a region that will become sub-pixel 110S1 that has a light detection function, pixel electrode 111e is provided in a region that will become sub-pixel 110IR that emits infrared light, and pixel electrode 111f is provided in a region that will become sub-pixel 110S2 that has a light detection function.

[0309] Subsequently, a film 113B, which will later become the second layer 113b, is formed on the pixel electrodes and the layer 101 including the transistors (FIG. 14B).

[0310] Either the first layer 113a of the light-emitting device or the second layer 113b of the light-receiving device can be formed first. For example, forming the layer with higher adhesion to the pixel electrode first can prevent film peeling during processing. For example, if the first layer 113a has higher adhesion to the pixel electrode than the second layer 113b, it is preferable to form the first layer 113a first. Furthermore, the thickness of the layer formed first may affect the distance between the substrate and a mask used to define the film formation area in the subsequent layer formation process. Forming the thinner layer first can prevent shadowing (the formation of a layer in a shaded area). For example, when forming a light-emitting device with a tandem structure, the first layer 113a is often thicker than the second layer 113b, so it is preferable to form the second layer 113b first. Furthermore, when forming a film using a polymer material by a wet process, it is preferable to form the film first. For example, when a polymer material is used for the active layer, it is preferable to form the second layer 113b first. As described above, by determining the formation order depending on the material, film formation method, etc., the yield in manufacturing the display device can be increased.

[0311] 14B, in the cross-sectional view taken along dashed line Y1-Y2, the film 113B is not formed on the conductive layer 123. For example, by using a mask 191 (also called an area mask or a rough metal mask to distinguish it from a fine metal mask) for defining the film formation area, the film 113B can be formed only in the desired region. By employing a film formation process using an area mask and a processing process using a resist mask, the light-emitting device and the light-receiving device can be fabricated by a relatively simple process.

[0312] The film 113B can be formed by, for example, a vapor deposition method, specifically a vacuum deposition method. Fig. 14B shows a state in which the film is formed by a so-called face-down method, in which the film is formed in a state in which the substrate is inverted so that the surface to be formed is facing downwards.

[0313] Furthermore, the film 113B may be formed by a method such as a transfer method, a printing method, an inkjet method, or a coating method.

[0314] Subsequently, a mask film 118B, which will later become mask layer 118b, and a mask film 119B, which will later become mask layer 119b, are formed in this order on film 113B and conductive layer 123 (FIG. 14C).

[0315] In this embodiment, an example is shown in which the mask film is formed with a two-layer structure of mask film 118B and mask film 119B, but the mask film may have a single-layer structure or a laminated structure of three or more layers.

[0316] By providing a mask layer on the film 113B, damage to the film 113B during the manufacturing process of the display device can be reduced, and the reliability of the light-receiving device can be improved.

[0317] The mask film 118B is made of a film that is highly resistant to the processing conditions of the film 113B, specifically, a film that has a high etching selectivity with respect to the film 113B. The mask film 119B is made of a film that has a high etching selectivity with respect to the mask film 118B.

[0318] Furthermore, mask films 118B and 119B are formed at a temperature lower than the heat-resistant temperature of film 113B. The substrate temperature when forming mask films 118B and 119B is typically 200°C or lower, preferably 150°C or lower, more preferably 120°C or lower, more preferably 100°C or lower, and even more preferably 80°C or lower.

[0319] Examples of heat resistance temperature indicators include glass transition point, softening point, melting point, thermal decomposition temperature, and 5% weight loss temperature. The heat resistance temperature of film 113A and film 113B (i.e., first layer 113a and second layer 113b) can be any of these temperatures, preferably the lowest of these temperatures. Furthermore, when film 113A or film 113B is composed of multiple layers, the lowest heat resistance temperature of each layer can be used as the heat resistance temperature of film 113A or film 113B. Furthermore, when one layer is a mixed layer composed of multiple materials, the heat resistance temperature of the material contained in the largest amount, or the lowest heat resistance temperature of each material, can be used as the heat resistance temperature of that layer.

[0320] It is preferable to use a film that can be removed by wet etching for the mask film 118B and the mask film 119B. By using the wet etching method, damage to the film 113B during processing of the mask film 118B and the mask film 119B can be reduced compared to when using the dry etching method.

[0321] The mask films 118B and 119B can be formed by, for example, sputtering, ALD (including thermal ALD and PEALD), CVD, or vacuum deposition. Alternatively, they may be formed by the wet film formation method described above.

[0322] It is preferable that the mask film 118B formed on and in contact with the film 113B be formed using a formation method that causes less damage to the film 113B than the mask film 119B. For example, it is preferable to form the mask film 118B using the ALD method or the vacuum deposition method rather than the sputtering method.

[0323] For each of the mask film 118B and the mask film 119B, for example, one or more of a metal film, an alloy film, a metal oxide film, a semiconductor film, an organic insulating film, an inorganic insulating film, and the like can be used.

[0324] For the mask film 118B and the mask film 119B, for example, a metal material such as gold, silver, platinum, magnesium, nickel, tungsten, chromium, molybdenum, iron, cobalt, copper, palladium, titanium, aluminum, yttrium, zirconium, or tantalum, or an alloy material containing such a metal material, can be used. In particular, it is preferable to use a low-melting-point material such as aluminum or silver. Using a metal material capable of blocking ultraviolet light for one or both of the mask films 118B and 119B is preferable because it can prevent ultraviolet light from being irradiated onto the film 113B and suppress deterioration of the film 113B.

[0325] Furthermore, for the mask film 118B and the mask film 119B, metal oxides such as In-Ga-Zn oxide, indium oxide, In-Zn oxide, In-Sn oxide, indium titanium oxide (In-Ti oxide), indium tin zinc oxide (In-Sn-Zn oxide), indium titanium zinc oxide (In-Ti-Zn oxide), indium gallium tin zinc oxide (In-Ga-Sn-Zn oxide), and indium tin oxide containing silicon can be used, respectively.

[0326] Instead of the gallium, an element M (M is one or more elements selected from aluminum, silicon, boron, yttrium, copper, vanadium, beryllium, titanium, iron, nickel, germanium, zirconium, molybdenum, lanthanum, cerium, neodymium, hafnium, tantalum, tungsten, and magnesium) may be used.

[0327] Furthermore, the mask films 118B and 119B can each be made of various inorganic insulating films that can be used for the protective layer 131. In particular, oxide insulating films are preferable because they have higher adhesion to the film 113B than nitride insulating films. For example, inorganic insulating materials such as aluminum oxide, hafnium oxide, and silicon oxide can each be used for the mask films 118B and 119B. For example, aluminum oxide films can be formed as the mask films 118B and 119B using the ALD method. Using the ALD method is preferable because it can reduce damage to the underlying layers (especially the EL layer or active layer, etc.).

[0328] For example, an inorganic insulating film (e.g., an aluminum oxide film) formed using the ALD method can be used as the mask film 118B, and an inorganic film (e.g., an In-Ga-Zn oxide film, an aluminum film, or a tungsten film) formed using the sputtering method can be used as the mask film 119B.

[0329] The same inorganic insulating film can be used for both the mask film 118B and the insulating layer 125 to be formed later. For example, an aluminum oxide film formed using an ALD method can be used for both the mask film 118B and the insulating layer 125. The mask film 118B and the insulating layer 125 may be formed under the same or different film-forming conditions. For example, by forming the mask film 118B under the same conditions as the insulating layer 125, the mask film 118B can be an insulating layer with high barrier properties against at least one of water and oxygen. On the other hand, since the mask film 118B is a layer that will be mostly or completely removed in a later process, it is preferable that it be easily processed. Therefore, the mask film 118B is preferably formed under conditions where the substrate temperature during film formation is lower than that of the insulating layer 125.

[0330] An organic material may be used for one or both of mask film 118B and mask film 119B. For example, the organic material may be a material that is soluble in a solvent that is chemically stable with respect to at least the film located at the top of film 113B. In particular, a material that dissolves in water or alcohol is preferably used. When forming a film of such a material, it is preferable to apply the material dissolved in a solvent such as water or alcohol by a wet film formation method, and then perform a heat treatment to evaporate the solvent. In this case, performing the heat treatment under a reduced pressure atmosphere is preferable because it allows the solvent to be removed at a low temperature in a short time, thereby reducing thermal damage to film 113B.

[0331] Mask film 118B and mask film 119B may each be made of an organic resin such as polyvinyl alcohol (PVA), polyvinyl butyral, polyvinylpyrrolidone, polyethylene glycol, polyglycerin, pullulan, water-soluble cellulose, alcohol-soluble polyamide resin, or a fluororesin such as a perfluoropolymer.

[0332] For example, the mask film 118B may be an organic film (e.g., a PVA film) formed using either a vapor deposition method or one of the above wet film formation methods, and the mask film 119B may be an inorganic film (e.g., a silicon nitride film) formed using a sputtering method.

[0333] As described in Embodiment 1, in the display device according to one embodiment of the present invention, part of the mask film may remain as a mask layer.

[0334] Next, a resist mask 190B is formed on the mask film 119B (FIG. 14C). The resist mask 190B can be formed by applying a photosensitive resin (photoresist) and then performing exposure and development.

[0335] The resist mask 190B may be made of either a positive resist material or a negative resist material.

[0336] The resist mask 190B is provided in a position overlapping with the pixel electrode 111d and the pixel electrode 111f. The resist mask 190B is preferably provided also in a position overlapping with the conductive layer 123. This can prevent the conductive layer 123 from being damaged during the manufacturing process of the display device. Note that the resist mask 190B does not necessarily have to be provided on the conductive layer 123.

[0337] Subsequently, a portion of the mask film 119B is removed using the resist mask 190B to form a mask layer 119b. The mask layer 119b remains on the pixel electrodes 111d, 111f, and the conductive layer 123. Thereafter, the resist mask 190B is removed. Next, a portion of the mask film 118B is removed using the mask layer 119b as a mask (also referred to as a hard mask), to form the mask layer 118b (FIG. 14D).

[0338] The mask films 118B and 119B can be processed by wet etching or dry etching, respectively. The mask films 118B and 119B are preferably processed by anisotropic etching.

[0339] Compared to the case of using dry etching, the use of wet etching can reduce damage to the film 113B when processing the mask films 118B and 119B. When using wet etching, it is preferable to use a chemical solution such as a developer, a tetramethylammonium hydroxide (TMAH) aqueous solution, diluted hydrofluoric acid, oxalic acid, phosphoric acid, acetic acid, nitric acid, or a mixture thereof.

[0340] In processing mask film 119B, film 113B is not exposed, and therefore the range of processing methods available is wider than in processing mask film 118B. Specifically, even when a gas containing oxygen is used as an etching gas in processing mask film 119B, deterioration of film 113B can be further suppressed.

[0341] Furthermore, when dry etching is used to process the mask film 118B, deterioration of the film 113B can be suppressed by not using a gas containing oxygen as the etching gas. When dry etching is used, it is preferable to use a gas containing a noble gas (also called a rare gas) such as CF, C4F8, SF6, CHF3, Cl2, HO, BCl3, or He as the etching gas.

[0342] For example, when an aluminum oxide film formed by ALD is used as the mask film 118B, the mask film 118B can be processed by dry etching using CHF3 and He. When an In-Ga-Zn oxide film formed by sputtering is used as the mask film 119B, the mask film 119B can be processed by wet etching using diluted phosphoric acid. Alternatively, the mask film 119B can be processed by dry etching using CH4 and Ar. Alternatively, the mask film 119B can be processed by wet etching using diluted phosphoric acid. When a tungsten film formed by sputtering is used as the mask film 119B, the mask film 119B can be processed by dry etching using SF6, CF4 and O2, or CF4, Cl2 and O2.

[0343] The resist mask 190B can be removed by, for example, ashing using oxygen plasma. Alternatively, oxygen gas and a noble gas such as CF4, C4F8, SF6, CHF3, Cl2, H2O, BCl3, or He may be used. Alternatively, the resist mask 190B may be removed by wet etching. In this case, the mask film 118B is located on the outermost surface, and the film 113B is not exposed. Therefore, damage to the film 113B can be suppressed during the process of removing the resist mask 190B. This also broadens the range of methods for removing the resist mask 190B.

[0344] Next, the film 113B is processed to form the second layer 113b. For example, the mask layer 119b and the mask layer 118b are used as a hard mask to remove a part of the film 113B, thereby forming the second layer 113b (FIG. 14D).

[0345] The film 113B is preferably processed by anisotropic etching, particularly anisotropic dry etching, or wet etching may be used.

[0346] When dry etching is used, deterioration of the film 113B can be suppressed by not using a gas containing oxygen as the etching gas.

[0347] Alternatively, a gas containing oxygen may be used as the etching gas. When the etching gas contains oxygen, the etching rate can be increased. Therefore, etching can be performed under low power conditions while maintaining a sufficiently high etching rate. This can reduce damage to the film 113B. Furthermore, problems such as adhesion of reaction products that occur during etching can be reduced.

[0348] When dry etching is used, it is preferable to use a gas containing one or more of H2, CF4, C4F8, SF6, CHF3, Cl2, H2O, BCl3, or a noble gas such as He or Ar as the etching gas. Alternatively, it is preferable to use a gas containing one or more of these and oxygen as the etching gas. Alternatively, oxygen gas may be used as the etching gas. Specifically, for example, a gas containing H2 and Ar, or a gas containing CF4 and He may be used as the etching gas. Alternatively, for example, a gas containing CF4, He, and oxygen may be used as the etching gas.

[0349] As described above, in one embodiment of the present invention, the resist mask 190B is formed over the mask film 119B, and part of the mask film 119B is removed using the resist mask 190B to form the mask layer 119b. Then, part of the film 113B is removed using the mask layer 119b as a hard mask to form the second layer 113b. Therefore, it can be said that the second layer 113b is formed by processing the film 113B by photolithography. Note that part of the film 113B may be removed using the resist mask 190B. Then, the resist mask 190B may be removed.

[0350] Subsequently, a film 113A that will later become the first layer 113a is formed on the pixel electrodes 111a, 111b, 111c, and 111e, on the mask layer 119b, and on the layer 101 that includes the transistors (FIG. 15A).

[0351] 15A shows an example in which the film 113A is not formed on the conductive layer 123 by using a mask 192. The film 113A can be formed by a method similar to that used to form the film 113B.

[0352] Next, a mask film 118A, which will later become the mask layer 118a, and a mask film 119A, which will later become the mask layer 119a, are formed in this order on the film 113A and the conductive layer 123, and then a resist mask 190A is formed (FIG. 15B). The materials and formation methods of the mask films 118A and 119A are the same as those applicable to the mask films 118B and 119B. The materials and formation methods of the resist mask 190A are the same as those applicable to the resist mask 190B.

[0353] By providing a mask layer on the film 113A, damage to the film 113A during the manufacturing process of the display device can be reduced, and the reliability of the light-emitting device can be improved.

[0354] The resist mask 190A is provided at a position overlapping the pixel electrodes 111a, 111b, 111c, and 111e.

[0355] Subsequently, a portion of the mask film 119A is removed using the resist mask 190A to form a mask layer 119a. The mask layer 119a remains on the pixel electrodes 111a, 111b, 111c, and 111e. Thereafter, the resist mask 190A is removed. Next, a portion of the mask film 118A is removed using the mask layer 119a as a mask to form the mask layer 118a (FIG. 15C).

[0356] Next, the film 113A is processed to form the first layer 113a. For example, the mask layer 119a and the mask layer 118a are used as a hard mask to remove a part of the film 113A, thereby forming the first layer 113a (FIG. 15C).

[0357] As shown in FIG. 15C, multiple first layers 113a can be formed by processing the film 113A. That is, the film 113A can be divided into multiple first layers 113a. This allows the first layers 113a to be provided in an island shape for each subpixel. Furthermore, in adjacent subpixels, it is possible to prevent the island-shaped first layers 113a or the island-shaped first layers 113a and the island-shaped second layers 113b from contacting each other. This prevents leakage current from occurring between subpixels. This prevents a decrease in the display quality of the display device. Furthermore, it is possible to achieve both high resolution and high display quality for the display device.

[0358] Note that when the third layer 113c is formed, the method for forming the second layer 113b described above can be referred to as a method for forming the third layer 113c. When the third layer 113c is formed, the resist mask 190A is not provided on the pixel electrode 111e, but is provided on the pixel electrode 111e when processing a film that will become the third layer 113c. Note that the order in which the first layer 113a, the second layer 113b, and the third layer 113c are formed does not matter.

[0359] In addition, when forming the fourth layer 113d, the method for forming the second layer 113b described above can be referred to as a method for forming the fourth layer 113d. When forming the fourth layer 113d, the resist mask 190B is not provided on the pixel electrode 111f, but is provided on the pixel electrode 111f when processing a film that will become the fourth layer 113d. Note that the order in which the first layer 113a, the second layer 113b, and the fourth layer 113d are formed does not matter.

[0360] Next, the mask layers 119a and 119b may be removed. Depending on the subsequent process, the mask layers 118a, 118b, 119a, and 119b may remain on the display device. By removing the mask layers 119a and 119b at this stage, it is possible to prevent the mask layers 119a and 119b from remaining on the display device. For example, if a conductive material is used for the mask layers 119a and 119b, removing the mask layers 119a and 119b in advance can prevent the remaining mask layers 119a and 119b from causing leakage current and capacitance.

[0361] The mask layer removal step can be performed using the same method as the mask layer processing step. In particular, by using a wet etching method, damage to the first layer 113a and the second layer 113b during mask layer removal can be reduced compared to when a dry etching method is used.

[0362] The mask layer may also be removed by dissolving it in a solvent such as water or alcohol, such as ethyl alcohol, methyl alcohol, isopropyl alcohol (IPA), or glycerin.

[0363] After removing the mask layers, drying treatment may be performed to remove water contained in the first layer 113a and the second layer 113b and water adsorbed to the surfaces of the first layer 113a and the second layer 113b. For example, heat treatment can be performed in an inert gas atmosphere or a reduced-pressure atmosphere. The heat treatment can be performed at a substrate temperature of 50°C to 200°C, preferably 60°C to 150°C, and more preferably 70°C to 120°C. A reduced-pressure atmosphere is preferable because drying can be performed at a lower temperature.

[0364] Subsequently, an insulating film 125A, which will later become the insulating layer 125, is formed so as to cover the pixel electrode, the first layer 113a, the second layer 113b, the mask layer 118a, and the mask layer 118b. Subsequently, an insulating film 127A is formed on the insulating film 125A (FIG. 16A).

[0365] The insulating films 125A and 127A are preferably formed by a formation method that causes less damage to the first layer 113a and the second layer 113b. In particular, since the insulating film 125A is formed in contact with the side surfaces of the first layer 113a and the second layer 113b, it is preferably formed by a formation method that causes less damage to the first layer 113a and the second layer 113b than the insulating film 127A.

[0366] The insulating films 125A and 127A are formed at a temperature lower than the upper temperature limits of the first layer 113a and the second layer 113b, respectively. By increasing the substrate temperature during film formation, the insulating film 125A can have a low impurity concentration and a high barrier property against at least one of water and oxygen, even if it is thin.

[0367] The substrate temperature when forming insulating film 125A and insulating film 127A is preferably 60°C or higher, 80°C or higher, 100°C or higher, or 120°C or higher, and 200°C or lower, 180°C or lower, 160°C or lower, 150°C or lower, or 140°C or lower, respectively.

[0368] It is preferable to form the insulating film 125A with a thickness of 3 nm or more, 5 nm or more, or 10 nm or more, and 200 nm or less, 150 nm or less, 100 nm or less, or 50 nm or less, within the above substrate temperature range.

[0369] The insulating film 125A is preferably formed by, for example, the ALD method. The ALD method is preferable because it can reduce film formation damage and also allows for the formation of a film with high coverage. The insulating film 125A is preferably formed as an aluminum oxide film by, for example, the ALD method.

[0370] Alternatively, the insulating film 125A may be formed by sputtering, CVD, or PECVD, which have a faster film formation rate than ALD, thereby enabling highly reliable display devices to be manufactured with high productivity.

[0371] The insulating film 127A is preferably formed by the wet film formation method described above, for example, by spin coating using a photosensitive resin.

[0372] Subsequently, the insulating film 127A is processed to form the insulating layer 127 (FIG. 16B). For example, when a photosensitive material is used for the insulating film 127A, the insulating layer 127 can be formed by exposing and developing the insulating film 127A. Etching may be performed to adjust the height of the surface of the insulating layer 127. The insulating layer 127 may be processed by ashing using oxygen plasma, for example. Also, when a non-photosensitive material is used for the insulating film 127A, the height of the surface of the insulating layer 127 can be adjusted by ashing or the like.

[0373] Subsequently, at least a portion of the insulating film 125A is removed to form the insulating layer 125 (FIG. 16B).

[0374] The insulating film 125A is preferably processed by dry etching. The insulating film 125A is preferably processed by anisotropic etching. The insulating film 125A can be processed using an etching gas that can be used when processing a mask film.

[0375] Thereafter, the mask layers 118a and 118b are removed, thereby exposing at least a portion of the upper surface of each of the first layer 113a, the second layer 113b, and the conductive layer 123.

[0376] The insulating film 125A and the mask layers 118a and 118b may be removed in separate steps or in the same step. For example, if the mask layers 118a and 118b and the insulating film 125A are films formed using the same material (e.g., aluminum oxide film), they can be removed in the same step, which is preferable.

[0377] Subsequently, the common layer 114 is formed on the insulating layer 125, the insulating layer 127, the first layer 113a, and the second layer 113b. Thereafter, the common electrode 115 is formed on the common layer 114 (FIG. 16C).

[0378] The common layer 114 can be formed by a method such as a vapor deposition method (including a vacuum deposition method), a transfer method, a printing method, an inkjet method, or a coating method.

[0379] For example, sputtering or vacuum deposition can be used to form the common electrode 115. Alternatively, a film formed by deposition and a film formed by sputtering may be laminated together.

[0380] Thereafter, a protective layer 131 is formed on the common electrode 115, and colored layers 132R, 132G, and 132B are formed on the protective layer 131. Note that the colored layer 132V shown in Fig. 16C is formed by laminating the colored layer 132G and the colored layer 132R. Furthermore, a display device can be fabricated by bonding the substrate 120 onto the protective layer 131 and the colored layers using the resin layer 122 (Fig. 16C).

[0381] The protective layer 131 can be formed by vacuum deposition, sputtering, CVD, ALD, or the like.

[0382] As described above, in the manufacturing method of the display device of this embodiment, the island-shaped first layer 113a and the island-shaped second layer 113b are formed by forming a film over the entire surface and then processing it, rather than using a fine metal mask. This allows the island-shaped layers to be formed with a uniform thickness. This makes it possible to realize a high-resolution display device or a display device with a high aperture ratio. Even when the resolution or aperture ratio is high and the distance between subpixels is extremely short, contact between the island-shaped first layers 113a, the island-shaped second layers 113b, or the island-shaped first layer 113a and the island-shaped second layer 113b in adjacent subpixels can be prevented. Therefore, leakage current between subpixels can be prevented. This prevents degradation in display quality and photodetection accuracy of the display device. Furthermore, both high resolution and high display quality can be achieved in the display device.

[0383] This embodiment mode can be combined with other embodiment modes as appropriate.

[0384] (Embodiment 3) In this embodiment, a display device of one embodiment of the present invention will be described with reference to FIGS.

[0385] The display device of the present embodiment can be a high-definition display device, and can therefore be used as a display unit of a wristwatch-type or bracelet-type information terminal (wearable device), a head-mounted display or other VR device, or a head-mounted wearable device such as a glasses-type AR device.

[0386] The display device of this embodiment can be a high-resolution display device or a large-sized display device. Therefore, the display device of this embodiment can be used in electronic devices having relatively large screens, such as television devices, desktop or notebook personal computers, computer monitors, digital signage, and large game machines such as pachinko machines, as well as in display units of digital cameras, digital video cameras, digital photo frames, mobile phones, portable game machines, personal digital assistants, and sound reproducing devices.

[0387] [Display module] 17A shows a perspective view of a display module 280. The display module 280 includes a display device 100A and an FPC 290. Note that the display device included in the display module 280 is not limited to the display device 100A, and may be any of the display devices 100B to 100F described below.

[0388] The display module 280 has a substrate 291 and a substrate 292. The display module 280 has a display unit 281. The display unit 281 is a region that displays an image in the display module 280, and is a region where light from each pixel provided in a pixel unit 284 (described later) can be viewed.

[0389] 17B is a perspective view schematically showing the configuration on the substrate 291 side. A circuit section 282, a pixel circuit section 283 on the circuit section 282, and a pixel section 284 on the pixel circuit section 283 are stacked on the substrate 291. A terminal section 285 for connecting to an FPC 290 is provided in a portion of the substrate 291 that does not overlap with the pixel section 284. The terminal section 285 and the circuit section 282 are electrically connected by a wiring section 286 composed of a plurality of wirings.

[0390] The pixel section 284 has a plurality of periodically arranged pixels 284a. An enlarged view of one pixel 284a is shown on the right side of Fig. 17B. The various configurations described in Embodiment 1 can be applied to the pixel 284a. Fig. 17B shows an example in which the pixel 284a has the same configuration as the pixel 110a shown in Fig. 1B.

[0391] The pixel circuit section 283 has a plurality of pixel circuits 283a arranged periodically.

[0392] One pixel circuit 283a is a circuit that controls the driving of multiple elements included in one pixel 284a. One pixel circuit 283a can be configured to have five circuits that control the driving of elements. For example, the pixel circuit 283a can be configured to have at least one selection transistor, one current control transistor (drive transistor), and a capacitor for each light-emitting device. In this case, a gate signal is input to the gate of the selection transistor, and a source signal is input to the source. This realizes an active matrix display device.

[0393] The circuit portion 282 includes a circuit for driving each pixel circuit 283a of the pixel circuit portion 283. For example, it is preferable that the circuit portion 282 includes one or both of a gate line driver circuit and a source line driver circuit. In addition, the circuit portion 282 may include at least one of an arithmetic circuit, a memory circuit, a power supply circuit, and the like.

[0394] The FPC 290 functions as wiring for supplying a video signal, a power supply potential, or the like from the outside to the circuit section 282. An IC may also be mounted on the FPC 290.

[0395] The display module 280 can be configured such that one or both of the pixel circuit unit 283 and the circuit unit 282 are provided overlapping below the pixel unit 284, thereby enabling the aperture ratio (effective display area ratio) of the display unit 281 to be extremely high. For example, the aperture ratio of the display unit 281 can be set to 40% or more and less than 100%, preferably 50% or more and 95% or less, and more preferably 60% or more and 95% or less. Furthermore, the pixels 284a can be arranged at an extremely high density, enabling the resolution of the display unit 281 to be extremely high. For example, it is preferable that the pixels 284a are arranged in the display unit 281 at a resolution of 2000 ppi or more, preferably 3000 ppi or more, more preferably 5000 ppi or more, and even more preferably 6000 ppi or more, and 20000 ppi or less, or 30000 ppi or less.

[0396] Such a display module 280 has extremely high resolution and can therefore be suitably used in VR devices or glasses-type AR devices. For example, even in a configuration in which the display unit of the display module 280 is viewed through lenses, the display module 280 has an extremely high-resolution display unit 281, so that even if the display unit is enlarged with the lenses, the pixels are not visible, allowing for a highly immersive display. Furthermore, the display module 280 is not limited to this, and can be suitably used in electronic devices having relatively small display units. For example, it can be suitably used in the display unit of a wearable electronic device such as a wristwatch.

[0397] [Display device 100A] The display device 100A shown in FIG. 18 includes a substrate 301, a light emitting device 130R, a light emitting device 130G, a light receiving device 150a, a colored layer 132R, a colored layer 132G, a colored layer 132V, a capacitor 240, and a transistor 310.

[0398] The subpixel 110R shown in FIG. 17B has a light-emitting device 130R and a colored layer 132R, the subpixel 110G has a light-emitting device 130G and a colored layer 132G, and the subpixel 110B has a light-emitting device 130B and a colored layer 132B. In the subpixel 110R, light emitted from the light-emitting device 130R is extracted as red light to the outside of the display device 100A through the colored layer 132R. Similarly, in the subpixel 110G, light emitted from the light-emitting device 130G is extracted as green light to the outside of the display device 100A through the colored layer 132G. In the subpixel 110B, light emitted from the light-emitting device 130B is extracted as blue light to the outside of the display device 100A through the colored layer 132B. The subpixel 110IR may have the configuration shown in FIG. 5B or 6B, for example. FIG. 17B shows an example in which the subpixel 110S1 has a light-receiving device 150a and a colored layer 132V. Light Lin is incident on the light-receiving device 150a from the substrate 120 side through the colored layer 132V. The colored layer 132V is shown as a stacked structure of a colored layer 132R and a colored layer 132G. In this case, the subpixel 110S2 can be configured to have a light-receiving device 150b but not the colored layer 132V. The configurations shown in FIGS. 7A and 7C can also be applied to the subpixels 110S1 and 110S2.

[0399] 17A and 17B. The stacked structure from the substrate 301 to the insulating layer 255c corresponds to the layer 101 including the transistor in the first embodiment.

[0400] The transistor 310 has a channel formation region in a substrate 301. The substrate 301 can be, for example, a semiconductor substrate such as a single crystal silicon substrate. The transistor 310 includes a part of the substrate 301, a conductive layer 311, a low-resistance region 312, an insulating layer 313, and an insulating layer 314. The conductive layer 311 functions as a gate electrode. The insulating layer 313 is located between the substrate 301 and the conductive layer 311 and functions as a gate insulating layer. The low-resistance region 312 is a region in which the substrate 301 is doped with impurities and functions as either a source or a drain. The insulating layer 314 is provided to cover a side surface of the conductive layer 311.

[0401] Furthermore, an element isolation layer 315 is provided between two adjacent transistors 310 so as to be embedded in the substrate 301 .

[0402] In addition, an insulating layer 261 is provided to cover the transistor 310 , and a capacitor 240 is provided on the insulating layer 261 .

[0403] Capacitor 240 has conductive layer 241, conductive layer 245, and insulating layer 243 located therebetween. Conductive layer 241 functions as one electrode of capacitor 240, conductive layer 245 functions as the other electrode of capacitor 240, and insulating layer 243 functions as a dielectric of capacitor 240.

[0404] The conductive layer 241 is provided over the insulating layer 261 and is buried in the insulating layer 254. The conductive layer 241 is electrically connected to one of the source and drain of the transistor 310 by a plug 271 buried in the insulating layer 261. The insulating layer 243 is provided to cover the conductive layer 241. The conductive layer 245 is provided in a region overlapping with the conductive layer 241 with the insulating layer 243 interposed therebetween.

[0405] An insulating layer 255a is provided covering the capacitor 240, an insulating layer 255b is provided on the insulating layer 255a, and an insulating layer 255c is provided on the insulating layer 255b. The light-emitting device 130R, the light-emitting device 130G, and the light-receiving device 150a are provided on the insulating layer 255c. FIG. 18 shows an example in which the light-emitting device 130R, the light-emitting device 130G, and the light-receiving device 150a have a stacked structure similar to that shown in FIG. 5A. Insulators are provided in the regions between adjacent light-emitting devices and in the regions between adjacent light-emitting devices and light-receiving devices. In FIG. 18 and other figures, an insulating layer 125 and an insulating layer 127 on the insulating layer 125 are provided in these regions.

[0406] A mask layer 118a is located on the first layer 113a of the light-emitting device 130R and the light-emitting device 130G, respectively, and a mask layer 118b is located on the second layer 113b of the light-receiving device 150a.

[0407] The pixel electrodes 111a, 111b, and 111d are electrically connected to one of the source and drain of the transistor 310 via a plug 256 embedded in the insulating layers 243, 255a, 255b, and 255c, a conductive layer 241 embedded in the insulating layer 254, and a plug 271 embedded in the insulating layer 261. The height of the top surface of the insulating layer 255c and the height of the plug 256 are the same or approximately the same. Various conductive materials can be used for the plug. Figure 18 and other figures show an example in which the pixel electrode has a two-layer structure consisting of a reflective electrode and a transparent electrode on the reflective electrode.

[0408] Furthermore, a protective layer 131 is provided on the light-emitting device 130R, the light-emitting device 130G, and the light-receiving device 150a. A substrate 120 is bonded to the protective layer 131 with a resin layer 122. For details of the components from the light-emitting devices to the substrate 120, refer to the first embodiment. The substrate 120 corresponds to the substrate 292 in FIG. 17A.

[0409] [Display device 100B] 19 has a configuration in which a transistor 310A and a transistor 310B, each having a channel formed in a semiconductor substrate, are stacked. Note that in the following description of the display device, descriptions of parts that are the same as those of the display device described above may be omitted.

[0410] The display device 100B has a configuration in which a substrate 301B on which a transistor 310B, a capacitor 240, and a light-emitting device are provided and a substrate 301A on which a transistor 310A is provided are bonded together.

[0411] Here, it is preferable to provide an insulating layer 345 on the lower surface of the substrate 301B. It is also preferable to provide an insulating layer 346 on the insulating layer 261 provided on the substrate 301A. The insulating layers 345 and 346 are insulating layers that function as protective layers and can suppress the diffusion of impurities into the substrates 301B and 301A. The insulating layers 345 and 346 can be made of an inorganic insulating film that can be used for the protective layer 131 or the insulating layer 332.

[0412] The substrate 301B is provided with a plug 343 that penetrates the substrate 301B and an insulating layer 345. Here, it is preferable to provide an insulating layer 344 to cover the side surface of the plug 343. The insulating layer 344 is an insulating layer that functions as a protective layer and can suppress the diffusion of impurities into the substrate 301B. The insulating layer 344 can be made of an inorganic insulating film that can be used for the protective layer 131.

[0413] Furthermore, a conductive layer 342 is provided on the back surface of substrate 301B (the surface opposite to substrate 120) below insulating layer 345. Conductive layer 342 is preferably provided so as to be embedded in insulating layer 335. Furthermore, the lower surfaces of conductive layer 342 and insulating layer 335 are preferably flattened. Here, conductive layer 342 is electrically connected to plug 343.

[0414] On the other hand, in the substrate 301A, a conductive layer 341 is provided on an insulating layer 346. The conductive layer 341 is preferably provided so as to be embedded in the insulating layer 336. Furthermore, the upper surfaces of the conductive layer 341 and the insulating layer 336 are preferably flattened.

[0415] The substrates 301A and 301B are electrically connected by bonding the conductive layer 341 and the conductive layer 342. Here, by improving the flatness of the surface formed by the conductive layer 342 and the insulating layer 335 and the surface formed by the conductive layer 341 and the insulating layer 336, the conductive layer 341 and the conductive layer 342 can be bonded well.

[0416] It is preferable to use the same conductive material for the conductive layers 341 and 342. For example, a metal film containing an element selected from Al, Cr, Cu, Ta, Ti, Mo, and W, or a metal nitride film containing the above elements (titanium nitride film, molybdenum nitride film, tungsten nitride film), etc., can be used. In particular, it is preferable to use copper for the conductive layers 341 and 342. This allows for the application of Cu-Cu (copper-copper) direct bonding technology (technology that achieves electrical conductivity by connecting Cu (copper) pads together).

[0417] [Display device 100C] The display device 100C shown in FIG. 20 has a configuration in which a conductive layer 341 and a conductive layer 342 are joined via a bump 347.

[0418] 20, by providing a bump 347 between the conductive layer 341 and the conductive layer 342, the conductive layer 341 and the conductive layer 342 can be electrically connected. The bump 347 can be formed using a conductive material containing, for example, gold (Au), nickel (Ni), indium (In), tin (Sn), or the like. Alternatively, for example, solder may be used as the bump 347. An adhesive layer 348 may be provided between the insulating layer 345 and the insulating layer 346. When the bump 347 is provided, the insulating layer 335 and the insulating layer 336 may not be provided.

[0419] [Display device 100D] The display device 100D shown in FIG. 21 differs from the display device 100A mainly in the configuration of the transistors.

[0420] The transistor 320 is a transistor (OS transistor) in which a metal oxide (also referred to as an oxide semiconductor) is used for a semiconductor layer in which a channel is formed.

[0421] The transistor 320 includes a semiconductor layer 321 , an insulating layer 323 , a conductive layer 324 , a pair of conductive layers 325 , an insulating layer 326 , and a conductive layer 327 .

[0422] 17A and 17B. The stacked structure from the substrate 331 to the insulating layer 255c corresponds to the layer 101 including the transistor in Embodiment 1. The substrate 331 can be an insulating substrate or a semiconductor substrate.

[0423] An insulating layer 332 is provided over a substrate 331. The insulating layer 332 functions as a barrier layer that prevents impurities such as water or hydrogen from diffusing from the substrate 331 to the transistor 320 and prevents oxygen from being released from the semiconductor layer 321 toward the insulating layer 332. The insulating layer 332 can be, for example, a film through which hydrogen or oxygen is less likely to diffuse than a silicon oxide film, such as an aluminum oxide film, a hafnium oxide film, or a silicon nitride film.

[0424] A conductive layer 327 is provided over the insulating layer 332, and an insulating layer 326 is provided to cover the conductive layer 327. The conductive layer 327 functions as a first gate electrode of the transistor 320, and part of the insulating layer 326 functions as a first gate insulating layer. An oxide insulating film such as a silicon oxide film is preferably used for at least a portion of the insulating layer 326 that is in contact with the semiconductor layer 321. The top surface of the insulating layer 326 is preferably planarized.

[0425] The semiconductor layer 321 is provided over an insulating layer 326. The semiconductor layer 321 preferably includes a metal oxide (also referred to as an oxide semiconductor) film having semiconductor properties. A pair of conductive layers 325 is provided over and in contact with the semiconductor layer 321 and functions as a source electrode and a drain electrode.

[0426] An insulating layer 328 is provided to cover top surfaces and side surfaces of the pair of conductive layers 325 and side surfaces of the semiconductor layer 321, and an insulating layer 264 is provided over the insulating layer 328. The insulating layer 328 functions as a barrier layer that prevents impurities such as water or hydrogen from diffusing from the insulating layer 264 or the like to the semiconductor layer 321 and prevents oxygen from being released from the semiconductor layer 321. The insulating layer 328 can be an insulating film similar to the insulating layer 332.

[0427] An opening reaching the semiconductor layer 321 is provided in the insulating layer 328 and the insulating layer 264. An insulating layer 323 and a conductive layer 324 are buried inside the opening and are in contact with the side surfaces of the insulating layer 264, the insulating layer 328, and the conductive layer 325 and the top surface of the semiconductor layer 321. The conductive layer 324 functions as a second gate electrode, and the insulating layer 323 functions as a second gate insulating layer.

[0428] The upper surfaces of the conductive layer 324, the insulating layer 323, and the insulating layer 264 are planarized so that their heights are the same or approximately the same, and insulating layers 329 and 265 are provided to cover them.

[0429] The insulating layer 264 and the insulating layer 265 function as interlayer insulating layers. The insulating layer 329 functions as a barrier layer that prevents impurities such as water or hydrogen from diffusing from the insulating layer 265 or the like to the transistor 320. The insulating layer 329 can be formed using an insulating film similar to the insulating layer 328 and the insulating layer 332.

[0430] A plug 274 electrically connected to one of the pair of conductive layers 325 is provided to be embedded in the insulating layer 265, the insulating layer 329, and the insulating layer 264. Here, the plug 274 preferably includes a conductive layer 274a covering the side surfaces of the openings in the insulating layer 265, the insulating layer 329, the insulating layer 264, and the insulating layer 328 and part of the top surface of the conductive layer 325, and a conductive layer 274b in contact with the top surface of the conductive layer 274a. In this case, the conductive layer 274a is preferably made of a conductive material through which hydrogen and oxygen do not easily diffuse.

[0431] [Display device 100E] A display device 100E illustrated in FIG. 22 has a stacked structure of a transistor 320A and a transistor 320B, each of which includes an oxide semiconductor as a semiconductor in which a channel is formed.

[0432] The transistor 320A, the transistor 320B, and the surrounding configurations thereof can be referred to the display device 100D.

[0433] Note that although two transistors including an oxide semiconductor are stacked here, the present invention is not limited to this structure, and for example, three or more transistors may be stacked.

[0434] [Display device 100F] A display device 100F shown in FIG. 23 has a stacked structure of a transistor 310 in which a channel is formed in a substrate 301 and a transistor 320 in which a channel is formed and a semiconductor layer containing metal oxide is formed.

[0435] An insulating layer 261 is provided to cover the transistor 310, and a conductive layer 251 is provided over the insulating layer 261. An insulating layer 262 is provided to cover the conductive layer 251, and a conductive layer 252 is provided over the insulating layer 262. The conductive layers 251 and 252 each function as wirings. An insulating layer 263 and an insulating layer 332 are provided to cover the conductive layer 252, and a transistor 320 is provided over the insulating layer 332. An insulating layer 265 is provided to cover the transistor 320, and a capacitor 240 is provided over the insulating layer 265. The capacitor 240 and the transistor 320 are electrically connected by a plug 274.

[0436] The transistor 320 can be used as a transistor included in a pixel circuit. The transistor 310 can be used as a transistor included in a pixel circuit or a driver circuit (gate line driver circuit, source line driver circuit) for driving the pixel circuit. The transistors 310 and 320 can be used as transistors included in various circuits such as an arithmetic circuit or a memory circuit.

[0437] By using this configuration, not only pixel circuits but also driving circuits etc. can be formed directly below the light-emitting device, making it possible to make the display device smaller than when driving circuits are provided around the periphery of the display area.

[0438] [Display device 100G] FIG. 24 shows a perspective view of display device 100G, and FIG. 25A shows a cross-sectional view of display device 100G.

[0439] The display device 100G has a configuration in which a substrate 152 and a substrate 151 are bonded together. In Fig. 24, the substrate 152 is indicated by a dashed line.

[0440] The display device 100G has a display unit 162, a connection unit 140, a circuit 164, wiring 165, etc. Fig. 24 shows an example in which an IC 173 and an FPC 172 are mounted on the display device 100G. Therefore, the configuration shown in Fig. 24 can also be said to be a display module having the display device 100G, an IC (integrated circuit), and an FPC.

[0441] The connection portion 140 is provided on the outside of the display portion 162. The connection portion 140 can be provided along one side or multiple sides of the display portion 162. There may be one or more connection portions 140. FIG. 24 shows an example in which the connection portion 140 is provided so as to surround the four sides of the display portion. The connection portion 140 electrically connects the common electrode of the light-emitting device and the conductive layer, and can supply a potential to the common electrode.

[0442] The circuit 164 can be, for example, a scanning line driver circuit.

[0443] The wiring 165 has a function of supplying signals and power to the display portion 162 and the circuit 164. The signals and power are input to the wiring 165 from the outside via the FPC 172 or input to the wiring 165 from the IC 173.

[0444] 24 shows an example in which an IC 173 is provided on a substrate 151 by a COG (Chip On Glass) method or a COF (Chip On Film) method. The IC 173 may be, for example, an IC having a scanning line driving circuit or a signal line driving circuit. The display device 100G and the display module may be configured without an IC. The IC may also be mounted on an FPC by a COF method or the like.

[0445] Figure 25A shows an example of a cross section of the display device 100G, where a portion of the area including the FPC 172, a portion of the circuit 164, a portion of the display unit 162, a portion of the connection unit 140, and a portion of the area including the end portion are cut away.

[0446] The display device 100G shown in Figure 25A has, between substrate 151 and substrate 152, transistor 201, transistor 205, light-emitting device 130R that emits red light, light-emitting device 130G that emits green light, light-receiving device 150a, colored layer 132R that transmits red light, and colored layer 132G that transmits green light, etc.

[0447] The light-emitting devices 130R and 130G and the light-receiving device 150a each have the same structure as the stacked structure shown in Fig. 7A, except for the configuration of the pixel electrodes. For details of the light-emitting devices and the light-receiving devices, refer to Embodiment 1.

[0448] Light-emitting device 130R has conductive layer 112a, conductive layer 126a on conductive layer 112a, and conductive layer 129a on conductive layer 126a. All or some of conductive layers 112a, 126a, and 129a may be referred to as pixel electrodes.

[0449] Light-emitting device 130G includes conductive layer 112b, conductive layer 126b on conductive layer 112b, and conductive layer 129b on conductive layer 126b.

[0450] The light-receiving device 150a includes a conductive layer 112c, a conductive layer 126c on the conductive layer 112c, and a conductive layer 129c on the conductive layer 126c.

[0451] The conductive layer 112a is connected to a conductive layer 222b included in the transistor 205 through an opening provided in the insulating layer 214. An end of the conductive layer 126a is located outside an end of the conductive layer 112a. An end of the conductive layer 126a and an end of the conductive layer 129a are aligned or approximately aligned. For example, a conductive layer functioning as a reflective electrode can be used for the conductive layer 112a and the conductive layer 126a, and a conductive layer functioning as a transparent electrode can be used for the conductive layer 129a.

[0452] The conductive layers 112b, 126b, and 129b in the light-emitting device 130G and the conductive layers 112c, 126c, and 129c in the light-receiving device 150a are similar to the conductive layers 112a, 126a, and 129a in the light-emitting device 130R, and therefore will not be described in detail.

[0453] The conductive layers 112a, 112b, and 112c are formed to cover the openings formed in the insulating layer 214. A layer 128 is buried in the recesses of the conductive layers 112a, 112b, and 112c.

[0454] The layer 128 has a function of planarizing the recesses of the conductive layers 112a, 112b, and 112c. Conductive layers 126a, 126b, and 126c, which are electrically connected to the conductive layers 112a, 112b, and 112c, are provided on the conductive layers 112a, 112b, and 112c and the layer 128. Therefore, the regions overlapping with the recesses of the conductive layers 112a, 112b, and 112c can also be used as light-emitting regions or light-receiving regions, thereby increasing the aperture ratio of the pixel.

[0455] The layer 128 may be an insulating layer or a conductive layer. Various inorganic insulating materials, organic insulating materials, and conductive materials can be used as appropriate for the layer 128. The layer 128 is preferably formed using an insulating material, and more preferably using an organic insulating material. For example, the material that can be used for the insulating layer 121 described above can be used for the layer 128.

[0456] The top and side surfaces of the conductive layers 126a, 126b, 129a, and 129b are covered with the first layer 113a. Similarly, the top and side surfaces of the conductive layers 126c and 129c are covered with the second layer 113b. Therefore, the entire area where the conductive layers 126a, 126b, and 126c are provided can be used as the light-emitting area of ​​the light-emitting devices 130R and 130G and the light-receiving area of ​​the light-receiving device 150a, thereby increasing the aperture ratio of the pixel.

[0457] The side surfaces of the first layer 113a and the second layer 113b are covered with insulating layers 125 and 127, respectively. A mask layer 118a is located between the first layer 113a and the insulating layer 125. Furthermore, a mask layer 118b is located between the second layer 113b and the insulating layer 125. A common layer 114 is provided on the first layer 113a, the second layer 113b, and the insulating layers 125 and 127, and a common electrode 115 is provided on the common layer 114. The common layer 114 and the common electrode 115 are each a continuous film provided in common to a plurality of light-emitting devices and a plurality of light-receiving devices.

[0458] A protective layer 131 is provided on the light-emitting devices 130R and 130G and the light-receiving device 150a. The protective layer 131 and the substrate 152 are bonded via an adhesive layer 142. The substrate 152 is provided with a light-shielding layer 117 and colored layers 132R and 132G. A solid sealing structure, a hollow sealing structure, or the like can be applied to seal the light-emitting devices. In FIG. 25A, the space between the substrates 152 and 151 is filled with the adhesive layer 142, thereby applying a solid sealing structure. Alternatively, the space may be filled with an inert gas (such as nitrogen or argon), thereby applying a hollow sealing structure. In this case, the adhesive layer 142 may be provided so as not to overlap with the light-emitting devices. Alternatively, the space may be filled with a resin different from the frame-shaped adhesive layer 142.

[0459] In the connection portion 140, a conductive layer 123 is provided on the insulating layer 214. The conductive layer 123 has an example of a laminated structure including a conductive film obtained by processing the same conductive film as the conductive layers 112a, 112b, and 112c, a conductive film obtained by processing the same conductive film as the conductive layers 126a, 126b, and 126c, and a conductive film obtained by processing the same conductive film as the conductive layers 129a, 129b, and 129c. The end of the conductive layer 123 is covered with a mask layer 118b, an insulating layer 125, and an insulating layer 127. A common layer 114 is provided on the conductive layer 123, and a common electrode 115 is provided on the common layer 114. The conductive layer 123 and the common electrode 115 are electrically connected via the common layer 114. The common layer 114 does not necessarily have to be provided in the connection portion 140. In this case, the conductive layer 123 and the common electrode 115 are in direct contact with each other and electrically connected.

[0460] The display device 100G is a top-emission type. Light emitted by the light-emitting device is emitted toward the substrate 152. The substrate 152 is preferably made of a material that is highly transparent to visible light. The pixel electrodes contain a material that reflects visible light, and the counter electrode (common electrode 115) contains a material that transmits visible light.

[0461] The stacked structure from the substrate 151 to the insulating layer 214 corresponds to the layer 101 including the transistor in Embodiment 1.

[0462] The transistor 201 and the transistor 205 are both formed over a substrate 151. These transistors can be manufactured using the same material and in the same process.

[0463] An insulating layer 211, an insulating layer 213, an insulating layer 215, and an insulating layer 214 are provided over the substrate 151 in this order. A part of the insulating layer 211 functions as a gate insulating layer for each transistor. A part of the insulating layer 213 functions as a gate insulating layer for each transistor. The insulating layer 215 is provided to cover the transistor. The insulating layer 214 is provided to cover the transistor and functions as a planarization layer. Note that the number of gate insulating layers and the number of insulating layers covering the transistors are not limited, and each may be a single layer or two or more layers.

[0464] At least one insulating layer covering the transistor is preferably made of a material that is resistant to the diffusion of impurities such as water and hydrogen. This allows the insulating layer to function as a barrier layer. With this structure, it is possible to effectively prevent impurities from diffusing into the transistor from the outside, thereby improving the reliability of the display device.

[0465] It is preferable to use an inorganic insulating film for each of the insulating layers 211, 213, and 215. Examples of the inorganic insulating film that can be used include a silicon nitride film, a silicon oxynitride film, a silicon oxide film, a silicon nitride oxide film, an aluminum oxide film, and an aluminum nitride film. Alternatively, a hafnium oxide film, an yttrium oxide film, a zirconium oxide film, a gallium oxide film, a tantalum oxide film, a magnesium oxide film, a lanthanum oxide film, a cerium oxide film, and a neodymium oxide film may also be used. Two or more of the above insulating films may be stacked.

[0466] An organic insulating layer is suitable for the insulating layer 214, which functions as a planarization layer. Materials that can be used for the organic insulating layer include acrylic resin, polyimide resin, epoxy resin, polyamide resin, polyimideamide resin, siloxane resin, benzocyclobutene-based resin, phenolic resin, and precursors of these resins. Alternatively, the insulating layer 214 may have a laminated structure of an organic insulating layer and an inorganic insulating layer. The outermost layer of the insulating layer 214 preferably functions as an etching protection layer. This prevents recesses from being formed in the insulating layer 214 during processing of the conductive layer 112a, the conductive layer 126a, the conductive layer 129a, or the like. Alternatively, recesses may be formed in the insulating layer 214 during processing of the conductive layer 112a, the conductive layer 126a, the conductive layer 129a, or the like.

[0467] The transistor 201 and the transistor 205 each include a conductive layer 221 that functions as a gate, an insulating layer 211 that functions as a gate insulating layer, conductive layers 222a and 222b that function as a source and a drain, a semiconductor layer 231, an insulating layer 213 that functions as a gate insulating layer, and a conductive layer 223 that functions as a gate. Here, the same hatching pattern is applied to multiple layers obtained by processing the same conductive film. The insulating layer 211 is located between the conductive layer 221 and the semiconductor layer 231. The insulating layer 213 is located between the conductive layer 223 and the semiconductor layer 231.

[0468] The structure of the transistor included in the display device of this embodiment is not particularly limited. For example, a planar transistor, a staggered transistor, an inverted staggered transistor, or the like can be used. Furthermore, either a top-gate transistor or a bottom-gate transistor structure may be used. Alternatively, gates may be provided above and below a semiconductor layer in which a channel is formed.

[0469] The transistor 201 and the transistor 205 have a structure in which a semiconductor layer in which a channel is formed is sandwiched between two gates. The two gates may be connected and the same signal may be supplied to drive the transistor. Alternatively, the threshold voltage of the transistor may be controlled by applying a potential for controlling the threshold voltage to one of the two gates and a potential for driving to the other.

[0470] The crystallinity of the semiconductor material used for the transistor is not particularly limited, and any of an amorphous semiconductor, a single-crystal semiconductor, and a semiconductor having crystallinity other than single crystal (a microcrystalline semiconductor, a polycrystalline semiconductor, or a semiconductor having a crystalline region in part) may be used. The use of a single-crystal semiconductor or a crystalline semiconductor is preferable because it can suppress deterioration of the transistor characteristics.

[0471] The semiconductor layer of the transistor preferably includes a metal oxide (also referred to as an oxide semiconductor). That is, the display device of this embodiment preferably includes a transistor using a metal oxide for a channel formation region (hereinafter referred to as an OS transistor).

[0472] Examples of crystalline oxide semiconductors include c-axis-aligned crystalline (CAAC)-OS and nanocrystalline (nc)-OS.

[0473] Alternatively, a transistor using silicon in a channel formation region (Si transistor) may be used. Examples of silicon include single crystal silicon, polycrystalline silicon, and amorphous silicon. In particular, a transistor having low temperature polysilicon (LTPS) in a semiconductor layer (hereinafter also referred to as an LTPS transistor) may be used. LTPS transistors have high field-effect mobility and good frequency characteristics.

[0474] By using Si transistors such as LTPS transistors, circuits that need to be driven at high frequencies (such as source driver circuits) can be built on the same substrate as the display unit, which simplifies the external circuits mounted on the display device and reduces component and mounting costs.

[0475] OS transistors have significantly higher field-effect mobility than transistors using amorphous silicon. Furthermore, OS transistors have significantly lower source-drain leakage current (also called off-state current) in an off state, allowing them to retain charge accumulated in a capacitor connected in series with the transistor for a long period of time. Furthermore, the use of OS transistors can reduce the power consumption of display devices.

[0476] Furthermore, to increase the light emission luminance of a light-emitting device included in a pixel circuit, it is necessary to increase the amount of current flowing through the light-emitting device. To achieve this, it is necessary to increase the source-drain voltage of the drive transistor included in the pixel circuit. Because OS transistors have a higher source-drain breakdown voltage than Si transistors, a high voltage can be applied between the source and drain of an OS transistor. Therefore, by using an OS transistor as the drive transistor included in a pixel circuit, it is possible to increase the amount of current flowing through the light-emitting device and increase the light emission luminance of the light-emitting device.

[0477] Furthermore, when the transistor operates in the saturation region, OS transistors can reduce the change in source-drain current relative to a change in gate-source voltage compared to Si transistors. Therefore, by using OS transistors as the drive transistors in pixel circuits, the current flowing between the source and drain can be precisely controlled by changing the gate-source voltage, thereby controlling the amount of current flowing through the light-emitting device. This allows for a greater number of gray levels in the pixel circuit.

[0478] Furthermore, in terms of the saturation characteristics of the current that flows when a transistor operates in the saturation region, an OS transistor can pass a more stable current (saturation current) than a Si transistor, even when the source-drain voltage gradually increases. Therefore, by using an OS transistor as a drive transistor, a stable current can be passed through a light-emitting device, even when the current-voltage characteristics of an EL device vary. In other words, when an OS transistor operates in the saturation region, the source-drain current remains almost unchanged even when the source-drain voltage increases, thereby stabilizing the light-emitting brightness of the light-emitting device.

[0479] As described above, by using an OS transistor for the drive transistor included in the pixel circuit, it is possible to achieve "suppression of black floating," "increase in light emission brightness," "multiple gradations," and "suppression of variation in light-emitting devices."

[0480] The metal oxide used in the semiconductor layer preferably contains, for example, indium, M (M is one or more elements selected from gallium, aluminum, silicon, boron, yttrium, tin, copper, vanadium, beryllium, titanium, iron, nickel, germanium, zirconium, molybdenum, lanthanum, cerium, neodymium, hafnium, tantalum, tungsten, and magnesium), and zinc. In particular, M is preferably one or more elements selected from aluminum, gallium, yttrium, and tin.

[0481] In particular, it is preferable to use an oxide containing indium (In), gallium (Ga), and zinc (Zn) (also referred to as IGZO) for the semiconductor layer. Alternatively, it is preferable to use an oxide containing indium, tin, and zinc. Alternatively, it is preferable to use an oxide containing indium, gallium, tin, and zinc. Alternatively, it is preferable to use an oxide containing indium (In), aluminum (Al), and zinc (Zn) (also referred to as IAZO). Alternatively, it is preferable to use an oxide containing indium (In), aluminum (Al), gallium (Ga), and zinc (Zn) (also referred to as IAGZO).

[0482] When the semiconductor layer is an In-M-Zn oxide, the atomic ratio of In in the In-M-Zn oxide is preferably equal to or greater than the atomic ratio of M. The atomic ratio of metal elements in such an In-M-Zn oxide may be In:M:Zn=1:1:1 or a composition thereabout, In:M:Zn=1:1:1.2 or a composition thereabout, In:M:Zn=1:3:2 or a composition thereabout, In:M:Zn=1:3:4 or a composition thereabout, In:M:Zn=2:1:3 or a composition thereabout, In:M:Zn=3:1:2 or a composition thereabout, or In:M:Zn=4:2:3. or a composition in the vicinity thereof, In:M:Zn=4:2:4.1 or a composition in the vicinity thereof, In:M:Zn=5:1:3 or a composition in the vicinity thereof, In:M:Zn=5:1:6 or a composition in the vicinity thereof, In:M:Zn=5:1:7 or a composition in the vicinity thereof, In:M:Zn=5:1:8 or a composition in the vicinity thereof, In:M:Zn=6:1:6 or a composition in the vicinity thereof, In:M:Zn=5:2:5 or a composition in the vicinity thereof, etc. Note that a composition in the vicinity thereof includes a range of ±30% of the desired atomic ratio.

[0483] For example, when describing a composition with an atomic ratio of In:Ga:Zn=4:2:3 or thereabout, this includes a case where, when In is taken as 4, Ga is 1 to 3 and Zn is 2 to 4. Furthermore, when describing a composition with an atomic ratio of In:Ga:Zn=5:1:6 or thereabout, this includes a case where, when In is taken as 5, Ga is greater than 0.1 and 2 or less and Zn is 5 to 7 or less. Furthermore, when describing a composition with an atomic ratio of In:Ga:Zn=1:1:1 or thereabout, this includes a case where, when In is taken as 1, Ga is greater than 0.1 and 2 or less and Zn is greater than 0.1 and 2 or less.

[0484] The transistors included in the circuit 164 may have the same structure as or different from the transistors included in the display portion 162. The transistors included in the circuit 164 may all have the same structure or may have two or more types of structures. Similarly, the transistors included in the display portion 162 may all have the same structure or may have two or more types of structures.

[0485] All the transistors in the display portion 162 may be OS transistors, all the transistors in the display portion 162 may be Si transistors, or some of the transistors in the display portion 162 may be OS transistors and the rest may be Si transistors.

[0486] For example, by using both an LTPS transistor and an OS transistor in the display portion 162, a display device with low power consumption and high driving capability can be realized. A configuration in which an LTPS transistor and an OS transistor are combined is sometimes referred to as LTPO. A more preferable example is a configuration in which an OS transistor is used as a transistor that functions as a switch for controlling conduction / non-conduction between wirings, and an LTPS transistor is used as a transistor for controlling current.

[0487] For example, one of the transistors included in the display unit 162 functions as a transistor for controlling the current flowing through the light-emitting device and can also be called a driving transistor. One of the source and drain of the driving transistor is electrically connected to the pixel electrode of the light-emitting device. It is preferable to use an LTPS transistor as the driving transistor. This allows the current flowing through the light-emitting device in the pixel circuit to be increased.

[0488] On the other hand, another transistor included in the display unit 162 functions as a switch for controlling pixel selection / non-selection and can also be called a selection transistor. The gate of the selection transistor is electrically connected to a gate line, and one of the source and drain is electrically connected to a source line (signal line). It is preferable to use an OS transistor as the selection transistor. This allows the gradation of pixels to be maintained even when the frame frequency is significantly reduced (for example, 1 fps or less), and therefore power consumption can be reduced by stopping the driver when displaying a still image.

[0489] As described above, the display device of one embodiment of the present invention can have a high aperture ratio, high definition, high display quality, and low power consumption.

[0490] Note that a display device according to one embodiment of the present invention includes an OS transistor and a light-emitting device with an MML (metal maskless) structure. This structure can significantly reduce leakage current that may flow through the transistor and leakage current that may flow between adjacent light-emitting devices (also referred to as lateral leakage current or side leakage current). Furthermore, with this structure, when an image is displayed on the display device, a viewer can observe one or more of image clarity, image sharpness, high saturation, and a high contrast ratio. Note that a structure in which leakage current that may flow through the transistor and lateral leakage current between light-emitting devices are extremely low can minimize light leakage during black display (so-called floating black).

[0491] 25B and 25C show other examples of transistor configurations.

[0492] The transistor 209 and the transistor 210 each include a conductive layer 221 functioning as a gate, an insulating layer 211 functioning as a gate insulating layer, a semiconductor layer 231 including a channel formation region 231i and a pair of low-resistance regions 231n, a conductive layer 222a connected to one of the pair of low-resistance regions 231n, a conductive layer 222b connected to the other of the pair of low-resistance regions 231n, an insulating layer 225 functioning as a gate insulating layer, a conductive layer 223 functioning as a gate, and an insulating layer 215 covering the conductive layer 223. The insulating layer 211 is located between the conductive layer 221 and the channel formation region 231i. The insulating layer 225 is located at least between the conductive layer 223 and the channel formation region 231i. An insulating layer 218 covering the transistor may also be provided.

[0493] 25B shows an example in which the insulating layer 225 covers the top surface and side surfaces of the semiconductor layer 231. The conductive layer 222a and the conductive layer 222b are connected to the low-resistance region 231n through openings provided in the insulating layer 225 and the insulating layer 215, respectively. One of the conductive layer 222a and the conductive layer 222b functions as a source, and the other functions as a drain.

[0494] 25C, the insulating layer 225 overlaps with the channel formation region 231i of the semiconductor layer 231 but does not overlap with the low-resistance region 231n. For example, the structure shown in FIG. 25C can be manufactured by processing the insulating layer 225 using the conductive layer 223 as a mask. In FIG. 25C, the insulating layer 215 is provided to cover the insulating layer 225 and the conductive layer 223, and the conductive layer 222a and the conductive layer 222b are each connected to the low-resistance region 231n through openings in the insulating layer 215.

[0495] A connection portion 204 is provided in a region of the substrate 151 where the substrate 152 does not overlap. In the connection portion 204, the wiring 165 is electrically connected to the FPC 172 via a conductive layer 166 and a connection layer 242. The conductive layer 166 has an example of a laminated structure including a conductive film obtained by processing the same conductive film as the conductive layers 112a, 112b, and 112c, a conductive film obtained by processing the same conductive film as the conductive layers 126a, 126b, and 126c, and a conductive film obtained by processing the same conductive film as the conductive layers 129a, 129b, and 129c. The conductive layer 166 is exposed on the top surface of the connection portion 204. This allows the connection portion 204 and the FPC 172 to be electrically connected via the connection layer 242.

[0496] It is preferable to provide a light-shielding layer 117 on the surface of substrate 152 facing substrate 151. Light-shielding layer 117 can be provided between adjacent light-emitting devices, on connecting portions 140, on circuits 164, etc. Various optical members can be disposed on the outside of substrate 152.

[0497] The substrate 151 and the substrate 152 may be made of the same material as that used for the substrate 120 .

[0498] The adhesive layer 142 can be made of a material that can be used for the resin layer 122 .

[0499] The connection layer 242 may be made of an anisotropic conductive film (ACF), an anisotropic conductive paste (ACP), or the like.

[0500] [Display device 100H] A display device 100H shown in FIG. 26A differs from display device 100G mainly in that it is a bottom-emission display device.

[0501] Light emitted from the light emitting device is emitted toward the substrate 151. It is preferable that a material that is highly transparent to visible light is used for the substrate 151. On the other hand, the light-transmitting property of the material used for the substrate 152 is not an issue.

[0502] It is preferable to form a light-shielding layer 117 between the substrate 151 and the transistor 201, and between the substrate 151 and the transistor 205. Fig. 26A shows an example in which the light-shielding layer 117 is provided on the substrate 151, the insulating layer 153 is provided on the light-shielding layer 117, and the transistors 201, 205, etc. are provided on the insulating layer 153.

[0503] Light-emitting device 130R includes conductive layer 112a, conductive layer 126a on conductive layer 112a, and conductive layer 129a on conductive layer 126a.

[0504] Light-emitting device 130G includes conductive layer 112b, conductive layer 126b on conductive layer 112b, and conductive layer 129b on conductive layer 126b.

[0505] The conductive layers 112a, 112b, 126a, 126b, 129a, and 129b are each made of a material that is highly transparent to visible light. The common electrode 115 is preferably made of a material that reflects visible light.

[0506] 25A and 26A show examples in which the upper surface of layer 128 has a flat portion, but there are no particular limitations on the shape of layer 128. Modified examples of layer 128 are shown in Figures 26B to 26D.

[0507] As shown in FIGS. 26B and 26D, the upper surface of layer 128 can be configured to have a shape with a recess in the center and its vicinity in cross section, that is, a shape with a concave curved surface.

[0508] Furthermore, as shown in FIG. 26C, the upper surface of layer 128 can be configured to have a shape in which the center and its vicinity bulge in cross section, that is, a shape having a convex curve.

[0509] The upper surface of layer 128 may have one or both of a convex curved surface and a concave curved surface. The number of convex curved surfaces and concave curved surfaces that the upper surface of layer 128 has is not limited, and may be one or more.

[0510] Furthermore, the height of the upper surface of layer 128 and the height of the upper surface of conductive layer 112a may be the same or approximately the same, or may be different from each other. For example, the height of the upper surface of layer 128 may be lower or higher than the height of the upper surface of conductive layer 112a.

[0511] 26B can also be considered an example in which layer 128 is contained within the recess of conductive layer 112a. On the other hand, as shown in FIG. 26D, layer 128 may be present outside the recess of conductive layer 112a, that is, the width of the top surface of layer 128 may be wider than the recess.

[0512] This embodiment mode can be combined with other embodiment modes as appropriate.

[0513] (Fourth embodiment) In this embodiment, a light-emitting device that can be used for a display device of one embodiment of the present invention will be described.

[0514] In this specification and the like, a structure in which each light-emitting device produces a different emission color (for example, blue (B), green (G), and red (R)) may be referred to as an SBS (Side By Side) structure.

[0515] The light emitting device can emit light of red, green, blue, cyan, magenta, yellow, white, etc. The color purity can be improved by providing the light emitting device with a microcavity structure.

[0516] [Light-emitting device] 27A, the light-emitting device has an EL layer 763 between a pair of electrodes (a lower electrode 761 and an upper electrode 762). The EL layer 763 can be composed of multiple layers, such as a layer 780, a light-emitting layer 771, and a layer 790.

[0517] The light-emitting layer 771 contains at least a light-emitting material.

[0518] When the lower electrode 761 is an anode and the upper electrode 762 is a cathode, the layer 780 includes one or more of a layer containing a substance with high hole-injecting properties (hole-injecting layer), a layer containing a substance with high hole-transporting properties (hole-transporting layer), and a layer containing a substance with high electron-blocking properties (electron-blocking layer). The layer 790 includes one or more of a layer containing a substance with high electron-injecting properties (electron-injecting layer), a layer containing a substance with high electron-transporting properties (electron-transporting layer), and a layer containing a substance with high hole-blocking properties (hole-blocking layer). When the lower electrode 761 is a cathode and the upper electrode 762 is an anode, the layers 780 and 790 have the opposite structures to those described above.

[0519] A structure including the layer 780, the light-emitting layer 771, and the layer 790 provided between a pair of electrodes can function as a single light-emitting unit, and the structure of FIG. 27A is referred to as a single structure in this specification.

[0520] 27B shows a modified example of the EL layer 763 of the light-emitting device shown in Fig. 27A. Specifically, the light-emitting device shown in Fig. 27B has a layer 781 on a lower electrode 761, a layer 782 on the layer 781, a light-emitting layer 771 on the layer 782, a layer 791 on the light-emitting layer 771, a layer 792 on the layer 791, and an upper electrode 762 on the layer 792.

[0521] When the lower electrode 761 is an anode and the upper electrode 762 is a cathode, for example, the layer 781 can be a hole injection layer, the layer 782 can be a hole transport layer, the layer 791 can be an electron transport layer, and the layer 792 can be an electron injection layer. When the lower electrode 761 is a cathode and the upper electrode 762 is an anode, the layer 781 can be an electron injection layer, the layer 782 can be an electron transport layer, the layer 791 can be a hole transport layer, and the layer 792 can be a hole injection layer. Such a layer structure allows carriers to be efficiently injected into the light-emitting layer 771, and the efficiency of carrier recombination in the light-emitting layer 771 can be increased.

[0522] As shown in FIGS. 27C and 27D, a configuration in which a plurality of light-emitting layers (light-emitting layers 771, 772, 773) are provided between layer 780 and layer 790 is also a variation of the single structure.

[0523] 27E and 27F, a configuration in which a plurality of light-emitting units (EL layers 763a and 763b) are connected in series via a charge generation layer 785 is referred to as a tandem structure in this specification. The tandem structure may also be referred to as a stack structure. The tandem structure makes it possible to obtain a light-emitting device capable of emitting light with high brightness.

[0524] 27C and 27D, light-emitting layers 771, 772, and 773 may be made of light-emitting materials that emit light of the same color, or may even contain the same light-emitting material. For example, light-emitting layers 771, 772, and 773 may be made of a light-emitting material that emits blue light. A color conversion layer may be provided as layer 764 shown in FIG. 27D.

[0525] Furthermore, light-emitting materials that emit light of different colors may be used for the light-emitting layer 771, the light-emitting layer 772, and the light-emitting layer 773. When the lights emitted from the light-emitting layer 771, the light-emitting layer 772, and the light-emitting layer 773 are complementary colors, white light can be obtained. A color filter (also referred to as a colored layer) may be provided as the layer 764 shown in Figure 27D. When white light passes through the color filter, light of a desired color can be obtained.

[0526] A light-emitting device that emits white light preferably contains two or more types of luminescent materials. For example, a light-emitting device that emits white light as a whole can be obtained by making the luminescent color of the first luminescent layer and the luminescent color of the second luminescent layer complementary to each other. Furthermore, when white light is obtained using three or more luminescent layers, the luminescent colors of the three or more luminescent layers can be combined to produce white light as a whole light-emitting device.

[0527] 27E and 27F, the light-emitting layer 771 and the light-emitting layer 772 may be made of light-emitting materials that emit light of the same color, or even the same light-emitting material. Alternatively, the light-emitting layer 771 and the light-emitting layer 772 may be made of light-emitting materials that emit light of different colors. When the light emitted by the light-emitting layer 771 and the light-emitting layer 772 are complementary colors, white light is obtained. FIG. 27F shows an example in which a layer 764 is further provided. The layer 764 may be a color conversion layer or a color filter (colored layer), or both. In FIGS. 27D and 27F, a conductive film that transmits visible light is used for the upper electrode 762 in order to extract light toward the upper electrode 762.

[0528] 27C, 27D, 27E, and 27F, the layer 780 and the layer 790 may each independently have a laminated structure made up of two or more layers, as shown in FIG. 27B.

[0529] Next, materials that can be used in light-emitting devices will be described.

[0530] Of the lower electrode 761 and the upper electrode 762, a conductive film that transmits visible light is used for the electrode from which light is extracted. It is preferable to use a conductive film that reflects visible light for the electrode from which light is not extracted. When the display device has a light-emitting device that emits infrared light, it is preferable to use a conductive film that transmits visible light and infrared light for the electrode from which light is extracted, and a conductive film that reflects visible light and infrared light for the electrode from which light is not extracted.

[0531] A conductive film that transmits visible light may also be used for the electrode on the side from which light is not extracted. In this case, it is preferable to dispose the electrode between the reflective layer and the EL layer 763. That is, light emitted from the EL layer 763 may be reflected by the reflective layer and extracted from the display device.

[0532] The pair of electrodes of the light-emitting device can be formed from a metal, an alloy, an electrically conductive compound, a mixture thereof, etc. Specific examples include indium tin oxide (In-Sn oxide, also referred to as ITO), In-Si-Sn oxide (also referred to as ITSO), indium zinc oxide (In-Zn oxide), In-W-Zn oxide, an aluminum-containing alloy (aluminum alloy) such as an alloy of aluminum, nickel, and lanthanum (Al-Ni-La), and an alloy of silver and magnesium, an alloy of silver, palladium, and copper (Ag-Pd-Cu, also referred to as APC). Other examples of usable materials include aluminum (Al), magnesium (Mg), titanium (Ti), chromium (Cr), manganese (Mn), iron (Fe), cobalt (Co), nickel (Ni), copper (Cu), gallium (Ga), zinc (Zn), indium (In), tin (Sn), molybdenum (Mo), tantalum (Ta), tungsten (W), palladium (Pd), gold (Au), platinum (Pt), silver (Ag), yttrium (Y), and neodymium (Nd), as well as alloys containing these metals in combination. Other examples include rare earth metals such as lithium (Li), cesium (Cs), calcium (Ca), and strontium (Sr), europium (Eu), and ytterbium (Yb), as well as alloys containing these metals in combination. Graphene and other materials can also be used.

[0533] A light-emitting device preferably has a micro-optical resonator (microcavity) structure. Therefore, one of a pair of electrodes of the light-emitting device preferably has a transmissive and reflective electrode for visible light, and the other preferably has a reflective electrode for visible light. By having a microcavity structure in the light-emitting device, the light emitted from the light-emitting layer can be resonated between the two electrodes, thereby intensifying the light emitted from the light-emitting device.

[0534] The semi-transmitting / semi-reflective electrode can have a laminated structure of a reflective electrode and an electrode that is transparent to visible light (also called a transparent electrode).

[0535] The light transmittance of the transparent electrode is 40% or more. For example, it is preferable to use an electrode with a visible light (light with a wavelength of 400 nm or more and less than 750 nm) transmittance of 40% or more for a light-emitting device. The visible light reflectance of the semi-transparent / semi-reflective electrode is 10% or more and 95% or less, preferably 30% or more and 80% or less. The visible light reflectance of the reflective electrode is 40% or more and 100% or less, preferably 70% or more and 100% or less. The resistivity of these electrodes is 1×10 -2 Ωcm or less is preferable.

[0536] The light-emitting device can be made of either a low-molecular-weight compound or a high-molecular-weight compound, and may contain an inorganic compound. The layers constituting the light-emitting device can be formed by a method such as vapor deposition (including vacuum vapor deposition), transfer, printing, inkjet printing, or coating.

[0537] The light-emitting layer can contain one or more light-emitting materials. As the light-emitting material, a material that emits light of a color such as blue, purple, blue-purple, green, yellow-green, yellow, orange, or red is appropriately used. Furthermore, a material that emits near-infrared light can also be used as the light-emitting material.

[0538] The light-emitting material may include a fluorescent material, a phosphorescent material, a TADF material, and a quantum dot material.

[0539] Examples of fluorescent materials include pyrene derivatives, anthracene derivatives, triphenylene derivatives, fluorene derivatives, carbazole derivatives, dibenzothiophene derivatives, dibenzofuran derivatives, dibenzoquinoxaline derivatives, quinoxaline derivatives, pyridine derivatives, pyrimidine derivatives, phenanthrene derivatives, and naphthalene derivatives.

[0540] Examples of phosphorescent materials include organometallic complexes (particularly iridium complexes) having a 4H-triazole skeleton, a 1H-triazole skeleton, an imidazole skeleton, a pyrimidine skeleton, a pyrazine skeleton, or a pyridine skeleton; organometallic complexes (particularly iridium complexes) having a phenylpyridine derivative having an electron-withdrawing group as a ligand; platinum complexes; and rare earth metal complexes.

[0541] The light-emitting layer may contain one or more organic compounds (host materials, assist materials, etc.) in addition to a light-emitting substance (guest material). As the one or more organic compounds, one or both of a substance with high hole-transporting properties (hole-transporting material) and a substance with high electron-transporting properties (electron-transporting material) can be used. Furthermore, as the one or more organic compounds, a bipolar material or a TADF material may be used.

[0542] The light-emitting layer preferably contains, for example, a phosphorescent material and a hole-transporting material and an electron-transporting material that are a combination that easily forms an exciplex. This configuration allows for efficient emission using Exciplex-Triplet Energy Transfer (ExTET), which is energy transfer from the exciplex to the light-emitting material (phosphorescent material). By selecting a combination that forms an exciplex that emits light that overlaps with the wavelength of the lowest-energy absorption band of the light-emitting material, the energy transfer becomes smooth, allowing for efficient emission. This configuration simultaneously enables high efficiency, low-voltage operation, and long life of the light-emitting device.

[0543] The EL layer 763 may further include a layer containing a substance with high hole-injection properties, a substance with high hole-transport properties, a hole-blocking material, a substance with high electron-transport properties, a substance with high electron-injection properties, an electron-blocking material, or a bipolar substance (a substance with high electron-transport properties and high hole-transport properties), as a layer other than the light-emitting layer.

[0544] The hole injection layer is a layer that injects holes from the anode into the hole transport layer and contains a substance with high hole injection properties, such as an aromatic amine compound and a composite material containing a hole transport material and an acceptor material (electron acceptor material).

[0545] The hole transport layer is a layer that transports holes injected from the anode by the hole injection layer to the light emitting layer. The hole transport layer is a layer that contains a hole transport material. The hole transport material is a material having a concentration of 1×10 -6 cm 2 A substance having a hole mobility of 1 / Vs or more is preferred. Note that other substances can also be used as long as they have a higher hole transporting property than electron transporting property. As the hole transporting material, a substance having a high hole transporting property, such as a π-electron-rich heteroaromatic compound (e.g., a carbazole derivative, a thiophene derivative, a furan derivative, etc.) or an aromatic amine (a compound having an aromatic amine skeleton), is preferred.

[0546] The electron transport layer is a layer that transports electrons injected from the cathode by the electron injection layer to the light emitting layer. The electron transport layer is a layer that contains an electron transporting material. The electron transporting material is a material having a concentration of 1×10 -6 cm 2 A substance having an electron mobility of 1 / Vs or more is preferred. Note that other substances can also be used as long as they have a higher electron transporting property than holes. Examples of electron-transporting materials that can be used include metal complexes having a quinoline skeleton, metal complexes having a benzoquinoline skeleton, metal complexes having an oxazole skeleton, and metal complexes having a thiazole skeleton, as well as oxadiazole derivatives, triazole derivatives, imidazole derivatives, oxazole derivatives, thiazole derivatives, phenanthroline derivatives, quinoline derivatives having a quinoline ligand, benzoquinoline derivatives, quinoxaline derivatives, dibenzoquinoxaline derivatives, pyridine derivatives, bipyridine derivatives, pyrimidine derivatives, and other π-electron-deficient heteroaromatic compounds including nitrogen-containing heteroaromatic compounds.

[0547] The electron injection layer is a layer that injects electrons from the cathode to the electron transport layer and contains a substance with high electron injection properties. Examples of the substance with high electron injection properties include alkali metals, alkaline earth metals, and compounds thereof. Examples of the substance with high electron injection properties include a composite material containing an electron transport material and a donor material (electron donor material).

[0548] Furthermore, it is preferable that the lowest unoccupied molecular orbital (LUMO) level of a substance with high electron injection properties has a small difference (specifically, 0.5 eV or less) from the work function value of the material used for the cathode.

[0549] The electron injection layer may contain, for example, lithium, cesium, ytterbium, lithium fluoride (LiF), cesium fluoride (CsF), calcium fluoride (CaF x , where X is an arbitrary number), 8-(quinolinolato)lithium (abbreviation: Liq), 2-(2-pyridyl)phenolatolithium (abbreviation: LiPP), 2-(2-pyridyl)-3-pyridinolatolithium (abbreviation: LiPPy), 4-phenyl-2-(2-pyridyl)phenolatolithium (abbreviation: LiPPP), lithium oxide (LiO x The electron injection layer may be formed of an alkali metal, an alkaline earth metal, such as cesium carbonate, or a compound thereof. The electron injection layer may have a stacked structure of two or more layers. For example, the stacked structure may have a structure in which lithium fluoride is used as the first layer and ytterbium is provided as the second layer.

[0550] The electron injection layer may contain an electron transporting material. For example, a compound having an unshared electron pair and an electron-deficient heteroaromatic ring can be used as the electron transporting material. Specifically, a compound having at least one of a pyridine ring, a diazine ring (pyrimidine ring, pyrazine ring, pyridazine ring), and a triazine ring can be used.

[0551] The LUMO level of an organic compound having an unshared electron pair is preferably −3.6 eV or more and −2.3 eV or less. Generally, the highest occupied molecular orbital (HOMO) level and the LUMO level of an organic compound can be estimated by CV (cyclic voltammetry), photoelectron spectroscopy, optical absorption spectroscopy, inverse photoelectron spectroscopy, or the like.

[0552] Examples of organic compounds with lone electron pairs include 4,7-diphenyl-1,10-phenanthroline (abbreviated as BPhen), 2,9-di(naphthalen-2-yl)-4,7-diphenyl-1,10-phenanthroline (abbreviated as NBPhen), diquinoxalino[2,3-a:2',3'-c]phenazine (abbreviated as HATNA), and 2,4,6-tris[3'-(pyridin-3-yl)biphenyl-3-yl]-1,3,5-triazine (abbreviated as TmPPPyTz). NBPhen has a higher glass transition temperature (Tg) and better heat resistance than BPhen.

[0553] When fabricating a tandem-structure light-emitting device, a charge-generating layer (also called an intermediate layer) is provided between the two light-emitting units. The intermediate layer has the function of injecting electrons into one of the two light-emitting units and holes into the other when a voltage is applied between a pair of electrodes.

[0554] For the charge generation layer, a material applicable to an electron injection layer, such as lithium, can be suitably used. For the charge generation layer, a material applicable to a hole injection layer can be suitably used. For the charge generation layer, a layer containing a hole transport material and an acceptor material (electron acceptor material) can be suitably used. For the charge generation layer, a layer containing an electron transport material and a donor material can be suitably used. By forming such a charge generation layer, an increase in driving voltage can be suppressed when light-emitting units are stacked.

[0555] This embodiment mode can be combined with other embodiment modes as appropriate.

[0556] (Embodiment 5) In this embodiment, a light-receiving device that can be used for a display device of one embodiment of the present invention and a display device having a light-receiving and light-emitting function will be described.

[0557] The light receiving device can be, for example, a pn-type or pin-type photodiode. The light receiving device functions as a photoelectric conversion device (also called a photoelectric conversion element) that detects light incident on the light receiving device and generates electric charges. The amount of electric charges generated by the light receiving device is determined based on the amount of light incident on the light receiving device.

[0558] In particular, it is preferable to use an organic photodiode having a layer containing an organic compound as the light-receiving device. Organic photodiodes can be easily made thin, lightweight, and large in area, and have a high degree of freedom in shape and design, making them applicable to a variety of display devices.

[0559] [Light receiving device] 28A, the light-receiving device has a layer 765 between a pair of electrodes (a lower electrode 761 and an upper electrode 762). The layer 765 has at least one active layer and may further have other layers.

[0560] 28B shows a modification of the layer 765 included in the light-receiving device shown in Fig. 28A. Specifically, the light-receiving device shown in Fig. 28B includes a layer 766 on a lower electrode 761, an active layer 767 on the layer 766, a layer 768 on the active layer 767, and an upper electrode 762 on the layer 768.

[0561] The active layer 767 functions as a photoelectric conversion layer.

[0562] When the lower electrode 761 is an anode and the upper electrode 762 is a cathode, the layer 766 includes a hole transport layer and / or an electron blocking layer. The layer 768 includes an electron transport layer and / or a hole blocking layer. When the lower electrode 761 is a cathode and the upper electrode 762 is an anode, the layers 766 and 768 have the reversed structures.

[0563] Here, in a display device according to one embodiment of the present invention, a layer shared by the light-receiving device and the light-emitting device (which may also be referred to as a continuous layer shared by the light-receiving device and the light-emitting device) may be present. Such a layer may have different functions in the light-emitting device and the light-receiving device. In this specification, components may be referred to based on their functions in the light-emitting device. For example, a hole injection layer functions as a hole injection layer in the light-emitting device and as a hole transport layer in the light-receiving device. Similarly, an electron injection layer functions as an electron injection layer in the light-emitting device and as an electron transport layer in the light-receiving device. Furthermore, a layer shared by the light-receiving device and the light-emitting device may have the same function in the light-emitting device and in the light-receiving device. A hole transport layer functions as a hole transport layer in both the light-emitting device and the light-receiving device, and an electron transport layer functions as an electron transport layer in both the light-emitting device and the light-receiving device.

[0564] Next, materials that can be used for the light-receiving device will be described.

[0565] The light-receiving device can be made of either a low-molecular-weight compound or a high-molecular-weight compound, and may contain an inorganic compound. The layers constituting the light-receiving device can be formed by a method such as vapor deposition (including vacuum vapor deposition), transfer, printing, inkjet printing, or coating.

[0566] The active layer of the light-receiving device includes a semiconductor. Examples of the semiconductor include inorganic semiconductors such as silicon and organic semiconductors containing organic compounds. In this embodiment, an example in which an organic semiconductor is used as the semiconductor of the active layer is shown. By using an organic semiconductor, the light-emitting layer and the active layer can be formed by the same method (for example, vacuum deposition), which is preferable because it allows the use of a common manufacturing device.

[0567] The active layer is made of n-type semiconductor material, such as fullerene (e.g., C 60 , C 70 Examples of the fullerene derivatives include [6,6]-Phenyl-C71-butyric acid methyl ester (abbreviation: PC70BM), [6,6]-Phenyl-C61-butyric acid methyl ester (abbreviation: PC60BM), and 1',1'',4',4''-Tetrahydro-di[1,4]methanonaphthaleno[1,2:2',3',56,60:2'',3''][5,6]fullerene-C60 (abbreviation: ICBA).

[0568] Furthermore, examples of n-type semiconductor materials include perylene tetracarboxylic acid derivatives such as N,N'-dimethyl-3,4,9,10-perylene tetracarboxylic acid diimide (abbreviation: Me-PTCDI) and 2,2'-(5,5'-(thieno[3,2-b]thiophene-2,5-diyl)bis(thiophene-5,2-diyl))bis(methane-1-yl-1-ylidene)dimalononitrile (abbreviation: FT2TDMN).

[0569] Examples of n-type semiconductor materials include metal complexes having a quinoline skeleton, metal complexes having a benzoquinoline skeleton, metal complexes having an oxazole skeleton, metal complexes having a thiazole skeleton, oxadiazole derivatives, triazole derivatives, imidazole derivatives, oxazole derivatives, thiazole derivatives, phenanthroline derivatives, quinoline derivatives, benzoquinoline derivatives, quinoxaline derivatives, dibenzoquinoxaline derivatives, pyridine derivatives, bipyridine derivatives, pyrimidine derivatives, naphthalene derivatives, anthracene derivatives, coumarin derivatives, rhodamine derivatives, triazine derivatives, and quinone derivatives.

[0570] Examples of p-type semiconductor materials for the active layer include electron-donating organic semiconductor materials such as copper(II) phthalocyanine (CuPc), tetraphenyldibenzoperiflanthene (DBP), zinc phthalocyanine (ZnPc), tin phthalocyanine (SnPc), quinacridone, and rubrene.

[0571] Examples of p-type semiconductor materials include carbazole derivatives, thiophene derivatives, furan derivatives, and compounds having an aromatic amine skeleton. Examples of p-type semiconductor materials include naphthalene derivatives, anthracene derivatives, pyrene derivatives, triphenylene derivatives, fluorene derivatives, pyrrole derivatives, benzofuran derivatives, benzothiophene derivatives, indole derivatives, dibenzofuran derivatives, dibenzothiophene derivatives, indolocarbazole derivatives, porphyrin derivatives, phthalocyanine derivatives, naphthalocyanine derivatives, quinacridone derivatives, rubrene derivatives, tetracene derivatives, polyphenylenevinylene derivatives, polyparaphenylene derivatives, polyfluorene derivatives, polyvinylcarbazole derivatives, and polythiophene derivatives.

[0572] The HOMO level of the electron-donating organic semiconductor material is preferably shallower (higher) than the HOMO level of the electron-accepting organic semiconductor material, and the LUMO level of the electron-donating organic semiconductor material is preferably shallower (higher) than the LUMO level of the electron-accepting organic semiconductor material.

[0573] It is preferable to use a spherical fullerene as the electron-accepting organic semiconductor material and a planar organic semiconductor material as the electron-donating organic semiconductor material. Molecules with similar shapes tend to aggregate together, and when molecules of the same type aggregate, the energy levels of their molecular orbitals become close, which can improve carrier transport properties.

[0574] In addition, the active layer can be made of a polymer compound such as Poly[[4,8-bis[5-(2-ethylhexyl)-2-thienyl]benzo[1,2-b:4,5-b']dithiophene-2,6-diyl]-2,5-thiophenediyl[5,7-bis(2-ethylhexyl)-4,8-dioxo-4H,8H-benzo[1,2-c:4,5-c']dithiophene-1,3-diyl]]polymer (abbreviated as PBDB-T) or a PBDB-T derivative, which functions as a donor. For example, an acceptor material can be dispersed in PBDB-T or a PBDB-T derivative.

[0575] For example, the active layer is preferably formed by co-evaporating an n-type semiconductor and a p-type semiconductor, or may be formed by laminating an n-type semiconductor and a p-type semiconductor.

[0576] The active layer may also contain three or more materials. For example, in order to broaden the absorption wavelength range, a third material may be mixed in addition to an n-type semiconductor material and a p-type semiconductor material. In this case, the third material may be a low-molecular-weight compound or a high-molecular-weight compound.

[0577] The light-receiving device may further include a layer containing a substance with high hole-transporting properties, a substance with high electron-transporting properties, or a bipolar substance (a substance with high electron-transporting properties and high hole-transporting properties) as a layer other than the active layer. Furthermore, without being limited to the above, the light-receiving device may further include a layer containing a substance with high hole-injecting properties, a hole-blocking material, a substance with high electron-injecting properties, or an electron-blocking material. For the layer other than the active layer of the light-receiving device, for example, the materials that can be used in the light-emitting device described above can be used.

[0578] For example, polymer compounds such as poly(3,4-ethylenedioxythiophene) / poly(styrenesulfonic acid) (PEDOT / PSS) and inorganic compounds such as molybdenum oxide and copper iodide (CuI) can be used as hole transporting or electron blocking materials. Furthermore, inorganic compounds such as zinc oxide (ZnO) and organic compounds such as polyethyleneimine ethoxylate (PEIE) can be used as electron transporting or hole blocking materials. The light-receiving device may have, for example, a mixed film of PEIE and ZnO.

[0579] [Display device with light detection function] A display device according to one embodiment of the present invention has a display portion in which light-emitting devices are arranged in a matrix, and can display an image. Furthermore, the display portion has a matrix of light-receiving devices, and the display portion has an imaging function and / or a sensing function in addition to an image display function. The display portion can be used as an image sensor or a touch sensor. That is, by detecting light in the display portion, it is possible to capture an image or detect the proximity or contact of an object (such as a finger, a hand, or a pen).

[0580] Furthermore, in the display device of one embodiment of the present invention, the light-emitting device can be used as a light source for a sensor. In the display device of one embodiment of the present invention, when light emitted from the light-emitting device included in the display portion is reflected (or scattered) by an object, the light-receiving device can detect the reflected light (or scattered light), so that imaging or touch detection is possible even in a dark place.

[0581] Therefore, a light receiving unit and a light source are not required to be provided separately from the display device, and the number of components in the electronic device can be reduced. For example, a biometric authentication device or a capacitive touch panel for scrolling or the like is not required to be provided separately in the electronic device. Therefore, by using the display device of one embodiment of the present invention, an electronic device with reduced manufacturing costs can be provided.

[0582] Specifically, a display device according to one embodiment of the present invention has a light-emitting device and a light-receiving device in each pixel. In the display device according to one embodiment of the present invention, an organic EL device is used as the light-emitting device, and an organic photodiode is used as the light-receiving device. The organic EL device and the organic photodiode can be formed on the same substrate. Therefore, the organic photodiode can be built into a display device using an organic EL device.

[0583] In a display device having a light-emitting device and a light-receiving device in each pixel, the pixel has a light-receiving function, and therefore it is possible to detect contact or proximity of an object while displaying an image. For example, in addition to displaying an image using all of the sub-pixels of the display device, some of the sub-pixels can emit light as a light source, other sub-pixels can detect light, and the remaining sub-pixels can display an image.

[0584] When the light receiving device is used as an image sensor, the display device can capture an image using the light receiving device. For example, the display device of the present embodiment can be used as a scanner.

[0585] For example, an image sensor can be used to capture an image for personal authentication using a fingerprint, palm print, iris, pulse shape (including vein shape and artery shape), face, or the like.

[0586] For example, an image sensor can be used to capture images of the area around the eye, the surface of the eye, or the inside of the eye (such as the fundus) of a user of a wearable device. Therefore, the wearable device can have a function to detect one or more of the user's blinking, movement of the pupil, and movement of the eyelids.

[0587] The light receiving device can also be used as a touch sensor (also called a direct touch sensor) or a near-touch sensor (also called a hover sensor, hover touch sensor, non-contact sensor, or touchless sensor).

[0588] Here, the touch sensor or near-touch sensor can detect the proximity or contact of an object (such as a finger, hand, or pen).

[0589] A touch sensor can detect an object when the display device and the object are in direct contact with each other. A near-touch sensor can detect an object even if the object does not touch the display device. For example, a configuration in which the display device can detect an object when the distance between the display device and the object is between 0.1 mm and 300 mm, preferably between 3 mm and 50 mm, is preferred. This configuration allows the object to operate the display device without directly touching it; in other words, it allows the display device to be operated in a non-contact (touchless) manner. This configuration reduces the risk of the display device becoming dirty or scratched, or allows the object to operate the display device without directly touching dirt (e.g., dust, viruses, etc.) adhering to the display device.

[0590] Furthermore, the display device of one embodiment of the present invention can have a variable refresh rate. For example, the refresh rate can be adjusted (for example, within a range of 1 Hz to 240 Hz) depending on the content displayed on the display device, thereby reducing power consumption. Furthermore, the drive frequency of the touch sensor or near-touch sensor may be changed depending on the refresh rate. For example, when the refresh rate of the display device is 120 Hz, the drive frequency of the touch sensor or near-touch sensor can be configured to be higher than 120 Hz (typically 240 Hz). This configuration enables low power consumption and an increased response speed of the touch sensor or near-touch sensor.

[0591] The display device 100 shown in FIGS. 28C to 28E includes, between a substrate 351 and a substrate 359, a layer 353 having a light-receiving device, a functional layer 355, and a layer 357 having a light-emitting device.

[0592] The functional layer 355 has a circuit for driving the light-receiving device and a circuit for driving the light-emitting device. The functional layer 355 may be provided with one or more of a switch, a transistor, a capacitor, a resistor, a wiring, a terminal, etc. Note that when the light-emitting device and the light-receiving device are driven by a passive matrix method, a configuration without a switch or a transistor may be used.

[0593] 28C , when a finger 352 touches the display device 100, the light emitted by the light-emitting device in the layer 357 having the light-emitting device is reflected by the finger 352, and the reflected light is detected by the light-receiving device in the layer 353 having the light-receiving device. This makes it possible to detect that the finger 352 has touched the display device 100.

[0594] Furthermore, as shown in Figures 28D and 28E, the display device may have a function to detect or capture an object that is close to (i.e., not in contact with) the display device. Figure 28D shows an example of detecting a person's finger, and Figure 28E shows an example of detecting information about the periphery, surface, or interior of a person's eye (such as the number of blinks, eyeball movement, and eyelid movement).

[0595] This embodiment mode can be combined with other embodiment modes as appropriate.

[0596] (Sixth embodiment) In this embodiment, electronic devices of one embodiment of the present invention will be described with reference to FIGS.

[0597] The electronic devices of this embodiment include the display device of one embodiment of the present invention in their display portions. The display device of one embodiment of the present invention can easily achieve high definition and high resolution. Therefore, the display device of one embodiment of the present invention can be used in the display portions of various electronic devices.

[0598] Examples of electronic devices include electronic devices with relatively large screens such as television sets, desktop or notebook personal computers, computer monitors, digital signage, large game machines such as pachinko machines, as well as digital cameras, digital video cameras, digital photo frames, mobile phones, portable game machines, personal digital assistants, and sound playback devices.

[0599] In particular, the display device of one embodiment of the present invention can have high resolution and can therefore be suitably used in electronic devices having a relatively small display area. Examples of such electronic devices include wristwatch-type and bracelet-type information terminals (wearable devices), and head-mounted wearable devices such as VR devices (head-mounted displays), AR glasses-type devices, and MR glasses-type devices.

[0600] The display device of one embodiment of the present invention preferably has an extremely high resolution such as HD (1280 × 720 pixels), FHD (1920 × 1080 pixels), WQHD (2560 × 1440 pixels), WQXGA (2560 × 1600 pixels), 4K (3840 × 2160 pixels), or 8K (7680 × 4320 pixels). A resolution of 4K, 8K, or higher is particularly preferable. Furthermore, the pixel density (resolution) of the display device of one embodiment of the present invention is preferably 100 ppi or higher, preferably 300 ppi or higher, more preferably 500 ppi or higher, more preferably 1000 ppi or higher, more preferably 2000 ppi or higher, more preferably 3000 ppi or higher, more preferably 5000 ppi or higher, and even more preferably 7000 ppi or higher. By using a display device having either or both of high resolution and high definition, it is possible to further enhance the sense of realism and depth in electronic devices for personal use such as portable or home use. Furthermore, the screen ratio (aspect ratio) of the display device of one embodiment of the present invention is not particularly limited. For example, the display device can support various screen ratios such as 1:1 (square), 4:3, 16:9, and 16:10.

[0601] The electronic device of this embodiment may have a sensor (including a function to measure force, displacement, position, velocity, acceleration, angular velocity, rotation speed, distance, light, liquid, magnetism, temperature, chemical substance, sound, time, hardness, electric field, current, voltage, power, radiation, flow rate, humidity, gradient, vibration, odor, or infrared rays).

[0602] The electronic device of the present embodiment can have various functions, such as a function to display various information (still images, videos, text images, etc.) on a display unit, a touch panel function, a function to display a calendar, date, time, etc., a function to execute various software (programs), a wireless communication function, a function to read out programs or data recorded on a recording medium, etc.

[0603] 29A to 29D, an example of a wearable device that can be worn on the head will be described. These wearable devices have at least one of the following functions: a function to display AR content, a function to display VR content, a function to display SR content, and a function to display MR content. By having an electronic device have the function to display at least one of AR, VR, SR, and MR content, it is possible to enhance the user's sense of immersion.

[0604] Electronic device 700A shown in FIG. 29A and electronic device 700B shown in FIG. 29B each have a pair of display panels 751, a pair of housings 721, a communication unit (not shown), a pair of mounting units 723, a control unit (not shown), an imaging unit (not shown), a pair of optical members 753, a frame 757, and a pair of nose pads 758.

[0605] The display device of one embodiment of the present invention can be applied to the display panel 751. Therefore, the electronic device can display images with extremely high resolution.

[0606] Electronic device 700A and electronic device 700B can each project an image displayed on display panel 751 onto display area 756 of optical member 753. Because optical member 753 is translucent, the user can see the image displayed in the display area superimposed on a transmitted image visually recognized through optical member 753. Therefore, electronic device 700A and electronic device 700B are each electronic devices capable of AR display.

[0607] Electronic device 700A and electronic device 700B may be provided with a camera capable of capturing an image in front of them as an imaging unit. Furthermore, electronic device 700A and electronic device 700B may each be provided with an acceleration sensor such as a gyro sensor, thereby detecting the orientation of the user's head and displaying an image corresponding to that orientation in display area 756.

[0608] The communication unit has a wireless communication device, and can supply a video signal, etc. Instead of or in addition to the wireless communication device, a connector to which a cable through which a video signal and a power supply potential are supplied may be provided.

[0609] Furthermore, the electronic device 700A and the electronic device 700B are provided with batteries, which can be charged wirelessly and / or by wire.

[0610] The housing 721 may be provided with a touch sensor module. The touch sensor module has a function of detecting a touch on the outer surface of the housing 721. The touch sensor module can detect a tap operation or a slide operation by the user and perform various processes. For example, a tap operation can perform a process such as pausing or resuming a video, and a slide operation can perform a process such as fast-forwarding or fast-rewinding. Furthermore, providing a touch sensor module on each of the two housings 721 can expand the range of operations.

[0611] Various touch sensors can be used as the touch sensor module. For example, various types of touch sensors can be used, such as a capacitance type, a resistive film type, an infrared type, an electromagnetic induction type, a surface acoustic wave type, and an optical type. In particular, it is preferable to use a capacitance type or an optical type sensor in the touch sensor module.

[0612] When an optical touch sensor is used, a photoelectric conversion device (also called a photoelectric conversion element) can be used as the light receiving device. The active layer of the photoelectric conversion device can be made of either or both of an inorganic semiconductor and an organic semiconductor.

[0613] The electronic device 800A shown in FIG. 29C and the electronic device 800B shown in FIG. 29D each have a pair of display units 820, a housing 821, a communication unit 822, a pair of mounting units 823, a control unit 824, a pair of imaging units 825, and a pair of lenses 832.

[0614] The display device of one embodiment of the present invention can be applied to the display portion 820. Therefore, an electronic device capable of displaying images with extremely high resolution can be provided, which allows a user to feel a high sense of immersion.

[0615] Display unit 820 is provided inside housing 821 at a position that can be viewed through lens 832. Also, by displaying different images on the pair of display units 820, it is possible to perform a three-dimensional display using parallax.

[0616] Electronic device 800A and electronic device 800B can each be said to be electronic devices for VR. A user wearing electronic device 800A or electronic device 800B can view an image displayed on display unit 820 through lens 832.

[0617] It is preferable that electronic device 800A and electronic device 800B each have a mechanism that can adjust the left and right positions of lens 832 and display unit 820 so that they are optimally positioned according to the position of the user's eyes. It is also preferable that electronic device 800A and electronic device 800B each have a mechanism that can adjust the focus by changing the distance between lens 832 and display unit 820.

[0618] The user can wear electronic device 800A or electronic device 800B on the head using wearing unit 823. Note that, in Fig. 29C and other figures, a shape similar to the temples of glasses is shown as an example, but the present invention is not limited to this. Wearing unit 823 may be shaped like a helmet or a band, as long as it can be worn by the user.

[0619] The imaging unit 825 has a function of acquiring external information. Data acquired by the imaging unit 825 can be output to the display unit 820. An image sensor can be used for the imaging unit 825. Furthermore, multiple cameras may be provided to support multiple angles of view, such as telephoto and wide angle.

[0620] Although an example having the imaging unit 825 has been shown here, a distance measuring sensor (hereinafter also referred to as a detection unit) capable of measuring the distance to an object may be provided. That is, the imaging unit 825 is one aspect of the detection unit. As the detection unit, for example, an image sensor or a range image sensor such as a LIDAR (Light Detection and Ranging) can be used. By using an image obtained by the camera and an image obtained by the range image sensor, more information can be obtained, enabling more accurate gesture operations.

[0621] Electronic device 800A may have a vibration mechanism that functions as a bone conduction earphone. For example, a configuration having such a vibration mechanism can be applied to one or more of display unit 820, housing 821, and wearing unit 823. This allows a user to enjoy video and audio simply by wearing electronic device 800A, without the need for separate audio equipment such as headphones, earphones, or speakers.

[0622] The electronic device 800A and the electronic device 800B may each have an input terminal to which a cable can be connected for supplying a video signal from a video output device or the like and power for charging a battery provided in the electronic device.

[0623] The electronic device of one embodiment of the present invention may have a function of wirelessly communicating with earphone 750. Earphone 750 has a communication unit (not shown) and has a wireless communication function. Earphone 750 can receive information (e.g., audio data) from the electronic device through the wireless communication function. For example, electronic device 700A shown in FIG. 29A has a function of transmitting information to earphone 750 through the wireless communication function. Furthermore, for example, electronic device 800A shown in FIG. 29C has a function of transmitting information to earphone 750 through the wireless communication function.

[0624] 29B includes earphone unit 727. For example, earphone unit 727 and the control unit may be configured to be connected to each other by wire. Part of the wiring connecting earphone unit 727 and the control unit may be disposed inside housing 721 or wearing unit 723.

[0625] Similarly, electronic device 800B shown in Fig. 29D has earphone unit 827. For example, earphone unit 827 and control unit 824 can be configured to be connected to each other by wire. Part of the wiring connecting earphone unit 827 and control unit 824 may be disposed inside housing 821 or wearing unit 823. Furthermore, earphone unit 827 and wearing unit 823 may have magnets. This allows earphone unit 827 to be fixed to wearing unit 823 by magnetic force, which is preferable as it makes storage easier.

[0626] The electronic device may have an audio output terminal to which earphones or headphones can be connected. The electronic device may also have one or both of an audio input terminal and an audio input mechanism. For example, a sound collection device such as a microphone can be used as the audio input mechanism. By having the audio input mechanism, the electronic device may be endowed with the functionality of a so-called headset.

[0627] As described above, the electronic devices of one embodiment of the present invention are preferably either glasses-type devices (such as the electronic devices 700A and 700B) or goggle-type devices (such as the electronic devices 800A and 800B).

[0628] Furthermore, the electronic device of one embodiment of the present invention can transmit information to the earphone by wire or wirelessly.

[0629] Electronic device 6500 shown in FIG. 30A is a portable information terminal that can be used as a smartphone.

[0630] The electronic device 6500 includes a housing 6501, a display portion 6502, a power button 6503, a button 6504, a speaker 6505, a microphone 6506, a camera 6507, and a light source 6508. The display portion 6502 has a touch panel function.

[0631] The display device of one embodiment of the present invention can be applied to the display portion 6502.

[0632] FIG. 30B is a schematic cross-sectional view including the end of the housing 6501 on the microphone 6506 side.

[0633] A light-transmitting protective member 6510 is provided on the display surface side of the housing 6501, and a display panel 6511, optical members 6512, a touch sensor panel 6513, a printed circuit board 6517, a battery 6518, etc. are arranged in the space surrounded by the housing 6501 and the protective member 6510.

[0634] A display panel 6511, an optical member 6512, and a touch sensor panel 6513 are fixed to the protective member 6510 by adhesive layers (not shown).

[0635] In an area outside the display unit 6502, a part of the display panel 6511 is folded back, and an FPC 6515 is connected to the folded back part. An IC 6516 is mounted on the FPC 6515. The FPC 6515 is connected to a terminal provided on a printed circuit board 6517.

[0636] The flexible display of one embodiment of the present invention can be applied to the display panel 6511. Therefore, an extremely lightweight electronic device can be realized. In addition, since the display panel 6511 is extremely thin, a large-capacity battery 6518 can be mounted thereon while keeping the thickness of the electronic device small. Furthermore, by folding back a part of the display panel 6511 and arranging a connection portion with the FPC 6515 on the back side of the pixel portion, an electronic device with a narrow frame can be realized.

[0637] 30C shows an example of a television device. A television device 7100 has a display unit 7000 built into a housing 7101. Here, the housing 7101 is supported by a stand 7103.

[0638] The display device of one embodiment of the present invention can be applied to the display portion 7000.

[0639] 30C can be operated using operation switches provided on the housing 7101 and a separate remote control 7111. Alternatively, a touch sensor may be provided in the display unit 7000, and the television 7100 may be operated by touching the display unit 7000 with a finger or the like. The remote control 7111 may have a display unit that displays information output from the remote control 7111. The channel and volume can be controlled using operation keys or a touch panel provided on the remote control 7111, and the video displayed on the display unit 7000 can be controlled.

[0640] The television device 7100 is configured to include a receiver, a modem, and the like. The receiver can receive general television broadcasts. In addition, by connecting to a wired or wireless communication network via the modem, it is possible to perform one-way (from sender to receiver) or two-way (between sender and receiver, or between receivers, etc.) information communication.

[0641] 30D shows an example of a laptop personal computer 7200. The laptop personal computer 7200 includes a housing 7211, a keyboard 7212, a pointing device 7213, and an external connection port 7214. A display portion 7000 is incorporated in the housing 7211.

[0642] The display device of one embodiment of the present invention can be applied to the display portion 7000.

[0643] 30E and 30F show an example of digital signage.

[0644] 30E includes a housing 7301, a display unit 7000, and a speaker 7303. The digital signage 7300 may further include an LED lamp, operation keys (including a power switch or an operation switch), a connection terminal, various sensors, a microphone, and the like.

[0645] 30F shows a digital signage 7400 attached to a cylindrical pillar 7401. The digital signage 7400 has a display unit 7000 provided along the curved surface of the pillar 7401.

[0646] 30E and 30F, the display device of one embodiment of the present invention can be applied to the display portion 7000.

[0647] The larger the display unit 7000, the more information can be provided at one time. Also, the larger the display unit 7000, the more easily it will attract people's attention, which can increase the advertising effectiveness of, for example, advertisements.

[0648] Applying a touch panel to the display unit 7000 is preferable because it not only displays images or videos on the display unit 7000 but also allows the user to intuitively operate it. Furthermore, when used to provide information such as route information or traffic information, intuitive operation can improve usability.

[0649] 30E and 30F, it is preferable that digital signage 7300 or digital signage 7400 can wirelessly link with information terminal 7311 or information terminal 7411, such as a smartphone carried by a user. For example, advertising information displayed on display unit 7000 can be displayed on the screen of information terminal 7311 or information terminal 7411. Furthermore, by operating information terminal 7311 or information terminal 7411, the display on display unit 7000 can be switched.

[0650] Furthermore, the digital signage 7300 or the digital signage 7400 can be made to run a game using the screen of the information terminal 7311 or the information terminal 7411 as an operation means (controller), thereby allowing an unspecified number of users to simultaneously participate in and enjoy the game.

[0651] The electronic device shown in Figures 31A to 31G has a housing 9000, a display unit 9001, a speaker 9003, operation keys 9005 (including a power switch or an operation switch), a connection terminal 9006, a sensor 9007 (including the function of measuring force, displacement, position, velocity, acceleration, angular velocity, rotation speed, distance, light, liquid, magnetism, temperature, chemical substance, sound, time, hardness, electric field, current, voltage, power, radiation, flow rate, humidity, gradient, vibration, odor or infrared rays), a microphone 9008, etc.

[0652] 31A to 31G, the display device of one embodiment of the present invention can be applied to the display portion 9001.

[0653] 31A to 31G have various functions. For example, they may have a function to display various information (still images, videos, text images, etc.) on a display unit, a touch panel function, a function to display a calendar, date, or time, a function to control processing using various software (programs), a wireless communication function, a function to read and process programs or data recorded on a recording medium, etc. Note that the functions of the electronic device are not limited to these, and the electronic device may have various other functions. The electronic device may have multiple display units. Furthermore, the electronic device may have a function to include a camera or the like to capture still images or videos and store them on a recording medium (external or built-in to the camera), a function to display the captured images on the display unit, etc.

[0654] The electronic devices shown in FIGS. 31A to 31G will be described in detail below.

[0655] FIG. 31A is a perspective view showing a mobile information terminal 9101. The mobile information terminal 9101 can be used as, for example, a smartphone. The mobile information terminal 9101 may be provided with a speaker 9003, a connection terminal 9006, a sensor 9007, and the like. The mobile information terminal 9101 can display text and image information on multiple surfaces thereof. FIG. 31A shows an example in which three icons 9050 are displayed. Information 9051, indicated by a dashed rectangle, can also be displayed on another surface of the display unit 9001. Examples of the information 9051 include notifications of incoming emails, SNS messages, phone calls, etc., the title of the email or SNS message, the sender's name, the date and time, the remaining battery level, and signal strength. Alternatively, the icon 9050 or the like may be displayed in the position where the information 9051 is displayed.

[0656] 31B is a perspective view showing mobile information terminal 9102. Mobile information terminal 9102 has a function of displaying information on three or more sides of display unit 9001. Here, an example is shown in which information 9052, information 9053, and information 9054 are displayed on different sides. For example, while mobile information terminal 9102 is placed in a breast pocket of clothes, the user can check information 9053 displayed in a position that can be observed from above mobile information terminal 9102. The user can check the display without taking mobile information terminal 9102 out of the pocket and decide, for example, whether to answer a call.

[0657] 31C is a perspective view showing a tablet terminal 9103. The tablet terminal 9103 is capable of executing various applications such as mobile phone calls, e-mail, text browsing and creation, music playback, internet communication, computer games, etc. The tablet terminal 9103 has a display unit 9001, a camera 9002, a microphone 9008, and a speaker 9003 on the front side of a housing 9000, operation keys 9005 as operation buttons on the left side of the housing 9000, and a connection terminal 9006 on the bottom.

[0658] FIG. 31D is a perspective view showing a wristwatch-type mobile information terminal 9200. The mobile information terminal 9200 can be used as, for example, a smart watch (registered trademark). The display surface of the display unit 9001 is curved, and display can be performed along the curved display surface. The mobile information terminal 9200 can also perform hands-free calling by communicating with, for example, a headset capable of wireless communication. The mobile information terminal 9200 can also perform data transmission and reception with other information terminals and charge itself via a connection terminal 9006. Note that charging may be performed by wireless power supply.

[0659] 31E to 31G are perspective views showing a foldable mobile information terminal 9201. FIG. 31E shows the mobile information terminal 9201 in an unfolded state, FIG. 31G shows it in a folded state, and FIG. 31F is a perspective view showing a state in the process of changing from one of FIG. 31E and FIG. 31G to the other. The mobile information terminal 9201 is highly portable when folded, and has a seamless, wide display area when unfolded, providing excellent viewability of the display. The display unit 9001 of the mobile information terminal 9201 is supported by three housings 9000 connected by hinges 9055. For example, the display unit 9001 can be bent with a curvature radius of 0.1 mm or more and 150 mm or less.

[0660] This embodiment mode can be combined with other embodiment modes as appropriate. [Explanation of symbols]

[0661] IR: subpixel, Lin: light, 100A: display device, 100B: display device, 100C: display device, 100D: display device, 100E: display device, 100F: display device, 100G: display device, 100H: display device, 100: display device, 101: layer, 102: display section, 103A: pixel unit, 103B: pixel unit, 105a: pixel, 105b: pixel, 105c: pixel, 105d: pixel, 105e: pixel, 105f: pixel, 110a: pixel, 110B: subpixel, 110b: pixel, 110c: pixel, 110d: pixel, 110G: subpixel, 110IR: subpixel, 110R: subpixel, 110S1: subpixel, 110S2: subpixel, 110: pixel, 111a: pixel electrode, 111b: pixel electrode, 111c: pixel electrode, 111d: pixel electrode, 111e: pixel electrode, 111f: pixel electrode, 112a: conductive layer, 112b: conductive layer, 112c: conductive layer, 113a: first layer, 113A: film, 113b: second layer, 113B: film, 113c: third layer, 113d: fourth layer, 114: common layer, 115: common electrode, 117: light-shielding layer, 118a: mask layer, 118A: mask film, 118b: mask layer, 118B: mask film, 118c: mask layer, 118d: mask layer, 119a: mask layer, 119A: mask film, 119b: mask layer, 119B: mask film, 120: substrate, 121: insulating layer, 122: resin layer, 123: conductive layer, 125A: insulating film, 125: insulating layer, 126a: conductive layer, 126b: conductive layer, 126c: conductive layer, 127A: insulating film, 127: insulating layer, 128: layer, 129a: conductive layer, 129b: conductive layer, 129c: conductive layer, 130B: light-emitting device, 130G: light-emitting device, 130IR: light-emitting device, 130R: light-emitting device, 131: protective layer, 132B: colored layer, 132G: Colored layer, 132R: colored layer, 132V: colored layer, 133: lens array, 134: insulating layer, 135: gap, 140: connecting portion, 142: adhesive layer, 150a: light receiving device, 150b: light receiving device, 151: substrate, 152: substrate, 153: insulating layer, 162: display portion, 164: circuit, 165: wiring, 166: conductive layer, 172: FPC, 173: IC, 190A: resist mask, 190B: resist mask, 191: mask, 192: mask, 201: transistor, 204: connecting portion, 205: transistor, 209: transistor, 210: transistor,211: insulating layer, 213: insulating layer, 214: insulating layer, 215: insulating layer, 218: insulating layer, 221: conductive layer, 222a: conductive layer, 222b: conductive layer, 223: conductive layer, 225: insulating layer, 231i: channel formation region, 231n: low resistance region, 231: semiconductor layer, 240: capacitor, 241: conductive layer, 242: connection layer, 243: insulating layer, 245: conductive layer, 251: conductive layer, 252: conductive layer, 254: insulating layer, 255a: insulating layer, 255b: insulating layer, 255c: insulating layer, 256: plug, 261: insulating layer, 262: insulating layer, 263: insulating layer, 264: insulating layer, 26 5: insulating layer, 271: plug, 274a: conductive layer, 274b: conductive layer, 274: plug, 280: display module, 281: display section, 282: circuit section, 283a: pixel circuit, 283: pixel circuit section, 284a: pixel, 284: pixel section, 285: terminal section, 286: wiring section, 290: FPC, 291: substrate, 292: substrate, 301A: substrate, 301B: substrate, 301: substrate, 310A: transistor, 310B: transistor, 310: transistor, 311: conductive layer, 312: low resistance region, 313: insulating layer, 314: insulating layer, 315: element isolation layer, 320A: transistor, 320B: transistor, 320: transistor, 321: semiconductor layer, 323: insulating layer, 324: conductive layer, 325: conductive layer, 326: insulating layer, 327: conductive layer, 328: insulating layer, 329: insulating layer, 331: substrate, 332: insulating layer, 335: insulating layer, 336: insulating layer, 341: conductive layer, 342: conductive layer, 343: plug, 344: insulating layer, 345: insulating layer, 346: insulating layer, 347: bump, 348: adhesive layer, 351: substrate, 352: finger, 353: layer, 355: functional layer, 357: layer, 359: substrate, 700A: electronic device, 700B: electronic device , 721: housing, 723: wearing part, 727: earphone part, 750: earphone, 751: display panel, 753: optical member, 756: display area, 757: frame, 758: nose pad, 761: lower electrode, 762: upper electrode, 763a: EL layer, 763b: EL layer, 763: EL layer, 764: layer, 765: layer, 766: layer, 767: active layer, 768: layer, 771: light-emitting layer, 772: light-emitting layer, 773: light-emitting layer, 780: layer, 781: layer, 782: layer, 785: charge generation layer, 790: layer, 791: layer, 792: layer, 800A: electronic device, 800B: electronic device,820: display unit, 821: housing, 822: communication unit, 823: wearing unit, 824: control unit, 825: imaging unit, 827: earphone unit, 832: lens, 6500: electronic device, 6501: housing, 6502: display unit, 6503: power button, 6504: button, 6505: speaker, 6506: microphone, 6507: camera, 6508: light source, 6510: protective member, 6511: display panel, 6512: optical member, 6513: touch sensor panel, 6515: FPC, 6516: IC, 6517: printed circuit board, 6518: battery, 7000: display unit, 7100: television device, 7101: housing, 7103: stand, 7111: remote control operation device, 7200: notebook personal computer, 721 1: Housing, 7212: Keyboard, 7213: Pointing device, 7214: External connection port, 7300: Digital signage, 7301: Housing, 7303: Speaker, 7311: Information terminal, 7400: Digital signage, 7401: Pillar, 7411: Information terminal, 9000: Housing, 9001: Display, 9002: Camera, 9003: Speaker, 9005: Operation keys, 9006: Connection terminal, 9007: Sensor, 9008: Microphone, 9050: Icon, 9051: Information, 9052: Information, 9053: Information, 9054: Information, 9055: Hinge, 9101: Portable information terminal, 9102: Portable information terminal, 9103: Tablet terminal, 9200: Portable information terminal, 9201: Portable information terminal,

Claims

1. a first pixel, a second pixel, and a third pixel; each of the first pixel to the third pixel includes a first sub-pixel, a second sub-pixel, and a third sub-pixel; the first pixel and the second pixel share a fourth subpixel; the third pixel has a fifth sub-pixel; a function of performing full-color display using the first sub-pixel to the third sub-pixel; each of the fourth subpixel and the fifth subpixel includes one different from the others of a light-emitting device that emits infrared light, a first light-receiving device, and a second light-receiving device; Display device.

2. A pixel detection device comprising a first pixel, a second pixel, and a third pixel, each of the first pixel to the third pixel includes a first sub-pixel, a second sub-pixel, and a third sub-pixel; the first pixel and the second pixel share a fourth subpixel; the third pixel has a fifth sub-pixel and a sixth sub-pixel; each of the fourth subpixel, the fifth subpixel, and the sixth subpixel includes one different from the others of a light emitting device that emits infrared light, a first light receiving device, and a second light receiving device; Among the fourth subpixel, the fifth subpixel, and the sixth subpixel, the subpixel having the first light receiving device has a function of detecting at least infrared light, Among the fourth subpixel, the fifth subpixel, and the sixth subpixel, the subpixel having the second light receiving device has a function of detecting at least visible light. Display device.

3. A pixel sensor comprising a first pixel, a second pixel, a third pixel, and a fourth pixel, each of the first pixel to the fourth pixel includes a first sub-pixel, a second sub-pixel, and a third sub-pixel; the first pixel and the second pixel share a fourth subpixel; the third pixel has a fifth sub-pixel; the fourth pixel has a sixth sub-pixel; a function of performing full-color display using the first sub-pixel to the third sub-pixel; each of the fourth subpixel, the fifth subpixel, and the sixth subpixel includes one different from the others of a light emitting device that emits infrared light, a first light receiving device, and a second light receiving device; Among the fourth subpixel, the fifth subpixel, and the sixth subpixel, the subpixel having the first light receiving device has a function of detecting at least infrared light, Among the fourth subpixel, the fifth subpixel, and the sixth subpixel, the subpixel having the second light receiving device has a function of detecting at least visible light. Display device.

4. a first pixel, a second pixel, and a third pixel; each of the first pixel to the third pixel includes a first sub-pixel, a second sub-pixel, and a third sub-pixel; the first pixel and the second pixel share a fourth subpixel; the third pixel has a fifth sub-pixel; the first subpixel includes a first light-emitting device and a first colored layer; the second subpixel includes a second light-emitting device and a second colored layer; the third subpixel includes a third light-emitting device and a third colored layer; the first light-emitting device has a first pixel electrode, a first EL layer on the first pixel electrode, and a common electrode on the first EL layer; the second light-emitting device has a second pixel electrode, a second EL layer on the second pixel electrode, and the common electrode on the second EL layer; the third light-emitting device includes a third pixel electrode, a third EL layer on the third pixel electrode, and the common electrode on the third EL layer; the first EL layer to the third EL layer are spaced apart from one another; the first colored layer has a function of transmitting light of a first color, the second colored layer has a function of transmitting light of a second color, the third colored layer has a function of transmitting light of a third color, each of the fourth subpixel and the fifth subpixel includes a fourth light-emitting device that emits infrared light, a first light-receiving device, and a second light-receiving device, the first light-emitting device and the fifth subpixel being different from each other; Display device.

5. A pixel detection device comprising a first pixel, a second pixel, and a third pixel, each of the first pixel to the third pixel includes a first sub-pixel, a second sub-pixel, and a third sub-pixel; the first pixel and the second pixel share a fourth subpixel; the third pixel has a fifth sub-pixel and a sixth sub-pixel; the first subpixel includes a first light-emitting device and a first colored layer; the second subpixel includes a second light-emitting device and a second colored layer; the third subpixel includes a third light-emitting device and a third colored layer; the first light-emitting device has a first pixel electrode, a first EL layer on the first pixel electrode, and a common electrode on the first EL layer; the second light-emitting device has a second pixel electrode, a second EL layer on the second pixel electrode, and the common electrode on the second EL layer; the third light-emitting device includes a third pixel electrode, a third EL layer on the third pixel electrode, and the common electrode on the third EL layer; the first EL layer to the third EL layer are spaced apart from one another; the first colored layer has a function of transmitting light of a first color, the second colored layer has a function of transmitting light of a second color, the third colored layer has a function of transmitting light of a third color, each of the fourth sub-pixel, the fifth sub-pixel, and the sixth sub-pixel includes a fourth light-emitting device that emits infrared light, a first light-receiving device, and a second light-receiving device, the first light-emitting device and the second light-receiving device being different from each other; Among the fourth subpixel, the fifth subpixel, and the sixth subpixel, the subpixel having the first light receiving device has a function of detecting at least infrared light, Among the fourth subpixel, the fifth subpixel, and the sixth subpixel, the subpixel having the second light receiving device has a function of detecting at least visible light. Display device.

6. A pixel sensor comprising a first pixel, a second pixel, a third pixel, and a fourth pixel, each of the first pixel to the fourth pixel includes a first sub-pixel, a second sub-pixel, and a third sub-pixel; the first pixel and the second pixel share a fourth subpixel; the third pixel has a fifth sub-pixel; the fourth pixel has a sixth sub-pixel; the first subpixel includes a first light-emitting device and a first colored layer; the second subpixel includes a second light-emitting device and a second colored layer; the third subpixel includes a third light-emitting device and a third colored layer; the first light-emitting device has a first pixel electrode, a first EL layer on the first pixel electrode, and a common electrode on the first EL layer; the second light-emitting device has a second pixel electrode, a second EL layer on the second pixel electrode, and the common electrode on the second EL layer; the third light-emitting device includes a third pixel electrode, a third EL layer on the third pixel electrode, and the common electrode on the third EL layer; the first EL layer to the third EL layer are spaced apart from one another; the first colored layer has a function of transmitting light of a first color, the second colored layer has a function of transmitting light of a second color, the third colored layer has a function of transmitting light of a third color, each of the fourth sub-pixel, the fifth sub-pixel, and the sixth sub-pixel includes a fourth light-emitting device that emits infrared light, a first light-receiving device, and a second light-receiving device, the first light-emitting device and the second light-receiving device being different from each other; Among the fourth subpixel, the fifth subpixel, and the sixth subpixel, the subpixel having the first light receiving device has a function of detecting at least infrared light, Among the fourth subpixel, the fifth subpixel, and the sixth subpixel, the subpixel having the second light receiving device has a function of detecting at least visible light. Display device.

7. A display device according to any one of claims 1 to 6; at least one of a connector and an integrated circuit; Display module.

8. A display module according to claim 7; At least one of a housing, a battery, a camera, a speaker, and a microphone; electronic equipment.

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