Indication device

Abstract

To provide a display device with high reliability.SOLUTION: A display device has flexibility and includes at least a first display region and a second display region. At least a part of wires provided in the first region or the second region is a meandering or chained wire. By forming the meandering or chained wire, the short-circuiting or disconnection of the wire due to curving or bending of the display device can be suppressed. By forming the meandering or chained wire, the operation failure, the decrease in reliability, and the like in the display device can be prevented.SELECTED DRAWING: Figure 26

Description

[Technical Field]

[0001] One aspect of the present invention relates to an article, a method, or a manufacturing method. Process, machine, manufacture, or composition of matter Another embodiment of the present invention relates to a semiconductor device, a display device, a light-emitting device, a lighting device, a power storage device, The present invention relates to a device, a storage device, a processor, a driving method thereof, or a manufacturing method thereof.

[0002] In this specification and the like, a semiconductor device is a device that can function by utilizing semiconductor characteristics. Refers to devices in general. For example, semiconductor elements (diodes, transistors, etc.), semiconductor circuits, etc. The semiconductor device can be used in a display device, a light-emitting device, a lighting device, a photoelectric conversion device, a memory device, an imaging device, etc. Imaging devices, electronic equipment, and the like may contain semiconductor devices. [Background technology]

[0003] In recent years, portable electronic devices such as smartphones and tablet terminals have become widely used. In Patent Document 1, a flexible display device is bent to display multiple images on multiple surfaces. 1 shows an electronic device having a display unit.

[0004] In addition, as a display device, an active matrix having a transistor for driving a display element in each pixel is used. Active matrix display devices are known. For example, Active matrix liquid crystal display devices and light-emitting elements such as organic EL elements as display elements Active matrix light-emitting display devices using these active matrix elements are known. The flat-matrix display device has a larger screen and higher resolution than the simple-matrix display device. It is easy to make thinner and has advantages in terms of reducing power consumption. [Prior art documents] [Patent documents]

[0005] [Patent Document 1] Special Publication No. 2014-535086 Summary of the Invention [Problem to be solved by the invention]

[0006] In recent years, there has been a demand for miniaturization of portable electronic devices. For example, To achieve miniaturization of electronic devices, it is necessary to reduce the radius of curvature of the bending part of the flexible display. However, in the electronic device shown in Patent Document 1, the flexible disk Since the display element and wiring are installed at the bent part of the spray, the radius of curvature of the bent part must be If it is made smaller, malfunctions may occur due to short circuits or breaks in the wiring or electrodes provided in the bent part. However, there is a problem that reliability is likely to decrease.

[0007] In addition, there is a demand for reduced power consumption in portable electronic devices. smartphones, tablets, smartwatches, laptops, etc. In the case of battery-powered devices, the percentage of power consumption by the display device in relation to the total power consumption is Therefore, there is a demand for display devices with lower power consumption.

[0008] In addition, portable electronic devices are designed to operate in environments with high external light illuminance and environments with low external light illuminance. In both cases, high visibility is required.

[0009] Also, if you drop a portable electronic device or put it in your trouser pocket, Therefore, when a display device is provided in an electronic device, Therefore, they are required to be shock-resistant and not easily damaged.

[0010] An object of one embodiment of the present invention is to provide a display device or the like with high display quality. Another object is to provide a highly reliable display device or the like. One of the objectives is to provide a display device that is low in force or that is resistant to impact. One of the objectives is to provide a display device that is hard to break. Another object is to provide a lightweight display device. Another object is to provide a display device or the like that is highly productive. One of the objectives is to provide a new display device.

[0011] The description of these problems does not preclude the existence of other problems. It is not necessary for the present invention to solve all of these problems. The above will be made clear from the description, drawings, claims, etc. It is possible to extract other issues from the descriptions in the patent, claims, etc. [Means for solving the problem]

[0012] One aspect of the present invention is a display device including a first display area, a second display area, a third display area, and a display device including the first display area and a display device including the second display area and a display device including the third display area. a display having a first region and a second region, the display having a bending function in the first region and the second region; a display device, wherein a first display area and a second display area are adjacent to each other via a first area, The second display area and the third display area are adjacent to each other via the second area, and in the first area The second display area does not have an electrode that electrically connects the first display area and the second display area. and a display device that does not have an electrode that electrically connects the second display area and the third display area. .

[0013] One aspect of the present invention is a display device including a first display area, a second display area, a third display area, and a display device including the first display area and a display device including the second display area and a display device including the third display area. a display having a first region and a second region, the display having a bending function in the first region and the second region; a display device, wherein a first display area and a second display area are adjacent to each other via a first area, The second display area and the third display area are adjacent to each other via the second area, and in the first area a first wiring that electrically connects the first display area and the second display area; a second wiring electrically connecting the second display area and the third display area; A display device characterized in that the wiring and the second wiring are meander-shaped. It is a location.

[0014] One aspect of the present invention is a display device having a first display area, a second display area, and a first area, The display area and the second display area are adjacent to each other via the first area, and the first display area is The display device has the wiring, and the first wiring is meander-shaped. The display area may have a curved surface.

[0015] One aspect of the present invention is a display device having a first display area, a second display area, and a first area, The display area and the second display area are adjacent to each other via the first area, and the first display area is the first display area has a second wiring, the first area has a third wiring, and the The first wiring is electrically connected to the third wiring, and the second wiring is electrically connected to the third wiring. At least one of the first wiring and the third wiring is meander-shaped. The first display area may have a curved surface.

[0016] Another embodiment of the present invention is the above display device including a first substrate and a second substrate. Therefore, the first display area, the second display area, and the first area, or the first display area The second display area, the third display area, the first area, and the second area are formed on the first substrate and The first substrate and the second substrate are preferably flexible. stomach.

[0017] Each of the first to third display areas includes a first display element and a second display element. The first display element has a function of reflecting visible light, and the second display element has a function of emitting visible light. It has a function.

[0018] The first display element may be, for example, a liquid crystal element. The second display element may be, for example, An organic EL element can be used.

[0019] Another embodiment of the present invention is a display device including the above display device, a touch sensor, an antenna, a battery, and a housing. The electronic device has a body, a speaker, a microphone, or an operation switch. [Effects of the Invention]

[0020] According to one embodiment of the present invention, a display device or the like with high display quality can be provided. This makes it possible to provide a highly reliable display device or the like. Alternatively, a display device that is resistant to shocks can be provided. Alternatively, a display device that is less likely to break can be provided. Alternatively, a lightweight display device can be provided. Alternatively, a highly productive display device can be provided. Alternatively, a novel display device or the like can be provided.

[0021] The description of these effects does not preclude the existence of other effects. An embodiment does not necessarily have all of these effects. Effects other than these may be included in the description, This becomes clear from the description, drawings, claims, etc. From any description, it is possible to extract effects other than these. [Brief explanation of the drawings]

[0022] [Figure 1] 1A to 1C illustrate electronic devices. [Figure 2] 1A to 1C illustrate electronic devices. [Figure 3] FIG. 1 is a block diagram illustrating an electronic device. [Figure 4] 1A to 1C illustrate one embodiment of the present invention. [Figure 5] 1A to 1C illustrate one embodiment of the present invention. [Figure 6] 1A to 1C illustrate one embodiment of the present invention. [Figure 7] 1A to 1C illustrate one embodiment of the present invention. [Figure 8] 1A to 1C illustrate one embodiment of the present invention. [Figure 9] 1A to 1C illustrate one embodiment of the present invention. [Figure 10] 1A to 1C illustrate one embodiment of the present invention. [Figure 11] 1A to 1C illustrate one embodiment of the present invention. [Figure 12] 1A to 1C illustrate one embodiment of the present invention. [Figure 13] 1A to 1C illustrate one embodiment of the present invention. [Figure 14] 1A to 1C illustrate one embodiment of the present invention. [Figure 15] 1A to 1C illustrate one embodiment of the present invention. [Figure 16]1A to 1C illustrate one embodiment of the present invention. [Figure 17] 1A to 1C illustrate one embodiment of the present invention. [Figure 18] 1A to 1C illustrate one embodiment of the present invention. [Figure 19] 1A to 1C illustrate one embodiment of the present invention. [Figure 20] 1A to 1C illustrate one embodiment of the present invention. [Figure 21] 1A to 1C illustrate one embodiment of the present invention. [Figure 22] 1A to 1C illustrate one embodiment of the present invention. [Figure 23] 1A to 1C illustrate one embodiment of the present invention. [Figure 24] 1A to 1C illustrate one embodiment of the present invention. [Figure 25] 1A to 1C illustrate one embodiment of the present invention. [Figure 26] 1A to 1C illustrate one embodiment of the present invention. [Figure 27] 1A to 1C illustrate one embodiment of the present invention. [Figure 28] 1A to 1C illustrate one embodiment of the present invention. [Figure 29] 1A to 1C illustrate a configuration example of a light-emitting element. [Figure 30] 1A to 1C illustrate examples of electronic devices. DETAILED DESCRIPTION OF THE INVENTION

[0023] The embodiments will be described in detail with reference to the drawings. However, the present invention is not limited to the following description. The present invention may be modified in various forms and details without departing from the spirit and scope of the present invention. Therefore, the present invention is based on the following embodiments. It should be noted that the following description of the invention is not intended to be limiting. In this case, the same parts or parts having similar functions are designated by the same reference numerals in different drawings. The following explanations may be omitted.

[0024] In addition, the position, size, range, etc. of each component shown in the drawings are for the purpose of facilitating understanding of the invention. Therefore, the actual location, size, range, etc. may not be shown. The invention is not necessarily limited to the position, size, range, etc. disclosed in the drawings. For example, in the actual manufacturing process, layers and resist masks are formed by processes such as etching. Although the number may be reduced unintentionally, it may be omitted to make it easier to understand.

[0025] In addition, in particular, top views (also called "plan views") and perspective views are used to make the invention easier to understand. In order to avoid this, some components may be omitted. may be omitted.

[0026] In this specification, ordinal numbers such as "first" and "second" are used to avoid confusion of components. The numbers are used to indicate the order or priority of the processes or stacking steps. In addition, even if a term is not accompanied by an ordinal number in this specification, etc., it is used to avoid confusion of the constituent elements. In order to clarify the scope of the invention, ordinal numbers may be used in the claims. Even if a term has an ordinal number in the first place, it may be given a different ordinal number in the claims. In addition, even if a term is given an ordinal number in this specification, etc., it may be used in the patent. Ordinal numbers may be omitted in claims, etc.

[0027] In addition, the terms "electrode" and "wiring" used in this specification and the like do not limit the functionality of these components. For example, an "electrode" may be used as part of a "wiring." Furthermore, the terms "electrode" and "wiring" are used interchangeably to refer to the plural "electrodes" and "wirings." This also includes cases where the "line" is installed as an integral part.

[0028] In this specification, the terms "above" and "below" refer to the positional relationship of components directly above or below each other. For example, "electrode on insulating layer A" is not limited to being below and in direct contact with the insulating layer A. If the expression is "B", electrode B does not need to be directly on insulating layer A, The inclusion of other components between the edge layer A and the electrode B is not excluded.

[0029] The source and drain functions may also be different when using transistors with different polarities or when using circuits When the direction of the current changes during circuit operation, they are interchanged depending on the operating conditions. Therefore, it is difficult to determine which is the source and which is the drain. In this specification, the terms source and drain may be used interchangeably. Let's say.

[0030] In addition, when it is explicitly stated in this specification that X and Y are connected, is when X and Y are electrically connected and when X and Y are functionally connected. and the case where X and Y are directly connected are considered to be disclosed in this specification and the like. Therefore, the present invention is not limited to predetermined connection relationships, for example, connection relationships shown in drawings or text. Connections other than those shown in the drawings or text are also considered to be described in the drawings or text. do.

[0031] In addition, in this specification, "electrically connected" means "something that has some kind of electrical effect." This includes cases where the device is connected via a " is not subject to any particular restrictions as long as it enables the transmission and reception of electrical signals between connected objects. Therefore, even when it is expressed as "electrically connecting," in an actual circuit, In some cases, there are no physical connections and only wires running.

[0032] Note that the channel length is, for example, the length of a semiconductor (or transistor) in a top view of a transistor. When the transistor is in the on state, the gate electrode overlaps with the semiconductor (the part where current flows). The source (source region or source electrode) in the region where the ) to the drain (drain region or drain electrode). In the transistor, the channel length does not necessarily have the same value in all regions. The channel length of a transistor may not be determined to a single value. In the detailed description, the channel length is any one value, the maximum value, in the region where the channel is formed. , the minimum or average value.

[0033] The channel width is, for example, the width of the semiconductor (or transistor) in a top view of the transistor. The area where the gate electrode overlaps with the semiconductor (the part of the semiconductor where current flows when the semiconductor is on). Or the length (width) of the area where the source and drain face each other in the region where the channel is formed. In many cases, the extending direction of the channel length and the extending direction of the channel width are perpendicular to each other. In one transistor, the channel width does not necessarily have the same value in all regions. That is, the channel width of one transistor may not be fixed to one value. In this specification, the channel width is defined as any one of the values ​​in the region where the channel is formed, It can be the maximum, minimum or average value.

[0034] Depending on the structure of the transistor, the channel in the region where the channel is actually formed may be The effective channel width (hereinafter also referred to as the "effective channel width") shown in the top view of the transistor The channel width that is actually used (hereinafter also referred to as the "apparent channel width") may differ from the For example, when the gate electrode covers the side surface of the semiconductor layer, the effective channel width becomes The effect of this may become larger than the channel width of the In a transistor in which the gate electrode covers the side surface of the semiconductor, In this case, the ratio of the channel formation region may be larger than the apparent channel width. , the effective channel width becomes larger.

[0035] In such a case, it may be difficult to estimate the effective channel width through actual measurements. For example, to estimate the effective channel width from the design value, the shape of the semiconductor must be known. Therefore, if the shape of the semiconductor is not known exactly, it is difficult to estimate the effective chip size. Channel width is difficult to measure accurately.

[0036] Therefore, in this specification, the apparent channel width is referred to as the "surrounding channel width (SCW)". In addition, in this specification, So, when we simply write "channel width," it means the enclosed channel width or the apparent channel width. In this specification, when simply referred to as a channel width, it may refer to the actual It may refer to the effective channel width. The width, apparent channel width, and enclosed channel width can be determined by analyzing cross-sectional TEM images. The value can be determined by, for example,

[0037] The field effect mobility of the transistor and the current value per channel width are calculated. In this case, the effective channel width is calculated using the enclosed channel width. The value may differ from that calculated using the channel width.

[0038] The term "impurities" in a semiconductor refers to, for example, anything other than the main component that constitutes the semiconductor. For example, Elements with a concentration of less than 0.1 atomic percent can be considered impurities. The DOS (Density of State) of the semiconductor increases, and carrier migration The mobility and crystallinity may decrease. In the case of semiconductors, impurities that change the properties of the semiconductor include, for example, Group 1 elements, Oxides of Group 2 elements, Group 13 elements, Group 14 elements, Group 15 elements, and transition metals There are elements other than the main components of semiconductors, such as hydrogen, lithium, sodium, silicon, and phosphite. These include urin, phosphorus, carbon, and nitrogen.

[0039] In this specification, "parallel" means that two straight lines are at an angle of -10° or more and 10° or less. Therefore, it includes the case where the angle is between -5° and 5°. "Parallel" refers to a state in which two lines are arranged at an angle of between -30° and 30°. Also, "perpendicular" and "orthogonal" mean that two straight lines are arranged at an angle of 80° or more and 100° or less. Therefore, it also includes the case where the angle is between 85° and 95°. "Straight" refers to two straight lines that form an angle of 60° or more and 120° or less.

[0040] In this specification, the terms "identical," "same," and "equal" are used to refer to counting values ​​and measurement values. " or "uniform" (including their synonyms) unless expressly stated otherwise. The calculations are subject to a margin of error of plus or minus 20%.

[0041] In this specification and the like, a resist mask is formed by photolithography, and the If an etching process (removal process) is performed later, the resist mask is The mask shall be removed after the etching process is completed.

[0042] In this specification and the like, a high power supply potential VDD (also referred to as "VDD" or "H potential") ) is a potential higher than the low power supply potential VSS (also called "VSS" or "L potential"). The low power supply potential VSS is a power supply potential that is lower than the high power supply potential VDD. The ground potential (also called "GND" or "GND potential") is referred to as VDD or For example, if VDD is at ground potential, VSS can be used as a ground potential. If VSS is at ground potential, VDD is at a potential higher than ground potential. It is ranked 1st.

[0043] The words "film" and "layer" may be used interchangeably depending on the situation. For example, the term "conductive film" can be replaced with "conductive layer." ". Alternatively, for example, the term "insulating film" may be used. It may be possible to change the term to "insulating layer."

[0044] In this specification, a transistor includes a gate, a drain, and a source. It is an element with at least three terminals. And, the drain (drain terminal, drain Between the source (source terminal, source region or drain electrode) and the source (source terminal, source region or source electrode) It has a channel region and allows current to flow between the source and drain through the channel region. In this specification and the like, the channel region is a region through which a current mainly flows. This refers to the area where the fluid flows.

[0045] Furthermore, unless otherwise specified, the transistors shown in this specification are enhancement type (non- The transistors shown in this specification are of the on-off type. Unless otherwise specified, the transistors are n-channel transistors. Unless otherwise specified, the voltage (also referred to as "Vth") is assumed to be greater than 0V.

[0046] In this specification and the like, the Vth of a transistor having a back gate is If there is no back gate, it refers to the Vth when the back gate potential is the same as the source or gate potential. .

[0047] Unless otherwise specified, in this specification and the like, the off-state current refers to the current that flows when a transistor is in an off-state. This refers to the drain current when the device is in a non-conducting state (also called a "non-conducting state" or "cut-off state"). Unless otherwise specified, the off state is when the gate and source of an n-channel transistor are in an off state. In a p-channel transistor, the voltage Vgs between the gate and the gate is lower than the threshold voltage Vth. This refers to the state in which the voltage Vgs between the gate and source is higher than the threshold voltage Vth. For example, The off-state current of an n-channel transistor is the voltage between the gate and source, Vgs, that is, the threshold voltage. It may refer to the drain current when the drain voltage is lower than the threshold voltage Vth.

[0048] The off-state current of a transistor may depend on Vgs. The current is I or less if there is a value of Vgs at which the off-state current of the transistor is I or less. The off-state current of a transistor is the current that flows in the off state at a given Vgs. Off-state or sufficiently reduced off-current at Vgs within a given range It may refer to the off-state current in the off state at Vgs, etc.

[0049] As an example, when the threshold voltage Vth is 0.5V and Vgs is 0.5V, The current is 1×10 -9 A, and the drain current at Vgs of 0.1 V is 1×10 -13 A, and the drain current at Vgs = -0.5 V is 1 × 10 -19 A and Vgs The drain current at -0.8V is 1×10 -22 A n-channel transistor The drain current of the transistor is as follows when Vgs is -0.5V: Or, when Vgs is in the range of -0.8V to -0.5V, 1×10 -19 Below A Therefore, the off-state current of the transistor is 1×10 -19 There are cases where it is said to be below A. The drain current of the transistor is 1×10 -22 There exists a Vgs that is less than A Therefore, the off-state current of the transistor is 1×10 -22 It may be said that it is below A.

[0050] The off-state current of a transistor may depend on temperature. Unless otherwise specified, the temperature is room temperature (RT), 60°C, 8 It may also represent the off-state current at 5°C, 95°C, or 125°C. The temperature at which the reliability of a semiconductor device containing a transistor is guaranteed, or At temperatures where the included semiconductor devices are used (for example, temperatures between 5°C and 35°C) The off-state current of a transistor is sometimes expressed as RT, 6 0℃, 85℃, 95℃, 125℃, the reliability of the semiconductor device containing the transistor is guaranteed or the temperature at which a semiconductor device containing the transistor is used (e.g. For example, the V It may refer to the existence of a gs value.

[0051] The off-state current of a transistor may depend on the voltage Vds between the drain and the source. In this specification, unless otherwise specified, the off-state current is measured when Vds is 0.1 V, 0.8 V, 1 V, 1.2V, 1.8V, 2.5V, 3V, 3.3V, 10V, 12V, 16V, or It may represent the off-state current at 20 V. Or, the semiconductor including the transistor Vds that guarantees the reliability of devices, etc., or semiconductor devices that include the transistor The off-state current of a transistor is sometimes expressed as the off-state current at Vds used in The current is less than or equal to I when Vds is 0.1V, 0.8V, 1V, 1.2V, 1.8V, 2 .5V, 3V, 3.3V, 10V, 12V, 16V, 20V, including transistors Vds that guarantees the reliability of the semiconductor device in which the transistor is included, or Vds used in devices, etc., Vg at which the off-state current of a transistor is I or less It may refer to the existence of a value of s.

[0052] In the above description of the off-state current, the drain may be read as the source. may also refer to the current that flows through the source when the transistor is in the off state.

[0053] In this specification and the like, the term "leak current" may be used to mean the same thing as "off-state current." In this specification and the like, the off-state current refers to, for example, the current when a transistor is in an off state. It can refer to the current that flows between the source and drain.

[0054] In this specification, metal oxide is a broad term referring to metal oxides. Metal oxides are oxides. Metal oxides are oxide insulators and oxide conductors (including transparent oxide conductors). , oxide semiconductors (also called "OS"), For example, when a metal oxide is used in the active layer of a transistor, the metal oxide In other words, metal oxides have amplifying, rectifying, and and switching action, the metal oxide is called a metal oxide semiconductor. Conductor (metal oxide semiconductor), abbreviated as OS In addition, when describing OSFET, it is possible to use a metal oxide or oxide semiconductor. In other words, it is a transistor having a body.

[0055] In this specification and the like, metal oxides containing nitrogen are also referred to as metal oxides. Nitrogen-containing metal oxides are also called metal oxynitrides (met). It may also be called hydroxybenzoxanthate (hydroxybenzoxanthate).

[0056] In this specification, CAAC (c-axis aligned crystal ), and CAC (cloud-aligned composite) CAAC represents an example of a crystal structure, and CAC represents an example of a function or material configuration. Represents.

[0057] In addition, in this specification and the like, CAC-OS or CAC-metal oxide means A part of the material has a conductive function, and a part of the material has an insulating function, and the whole material It functions as a semiconductor. When e is used in the active layer of a transistor, the conductive function is to transfer electrons (or The insulating function is the function of preventing the flow of electrons, which are carriers. By making the conductive function and insulating function work in a complementary manner, The function to turn the sync on / off can be set to CAC-OS or CAC-metal. CAC-OS or CAC-metal oxide By separating the functions in e, it is possible to maximize the functionality of both. Cut.

[0058] In this specification and the like, CAC-OS or CAC-metal oxide is a The conductive region has the above-mentioned conductive function, and the insulating region has the above-mentioned insulating function. The region has the insulating function described above. In addition, the material has a conductive region and an insulating region. The regions may be separated at the nanoparticle level. The conductive regions may be unevenly distributed in the material. They may be observed connected in a similar manner.

[0059] In addition, in CAC-OS or CAC-metal oxide, the conductive region and the insulating region are The peripheral region is 0.5 nm to 10 nm, preferably 0.5 nm to 3 nm. The following sizes may be dispersed in the material:

[0060] In addition, CAC-OS or CAC-metal oxide has different band gaps. For example, CAC-OS or CAC-metal oxidized de is a component with a wide gap due to the insulating region and a nano-gap due to the conductive region. In this configuration, when carriers flow, In the narrow gap component, carriers mainly flow. The component having a wide gap acts complementary to the component having a narrow gap. Carriers also flow into the wide-gap component in conjunction with the component with a wide gap. AC-OS or CAC-metal oxide is used for the channel region of the transistor. When the transistor is turned on, the transistor has a high current driving capability, i.e., a large on-state current. High field effect mobility can be obtained.

[0061] That is, CAC-OS or CAC-metal oxide is a matrix composite material. (matrix composite), or metal matrix composite It can also be called a matrix composite.

[0062] (Embodiment 1) In this embodiment, a display device according to one embodiment of the present invention will be described with reference to drawings.

[0063] <Portable electronic device 100> FIG. 1(A) is a perspective view of a portable electronic device 100 including a display device according to an aspect of the present invention. . FIG. 1(B) shows the left side of the electronic device 100, and FIG. 1(C) shows the front of the electronic device 100 . Further, FIG. 1(D) shows the right side of the electronic device 100. Also, FIG. 2(A) is a cross-sectional view of a portion indicated by a one-dot chain line of X1-X2 in FIG. 1(A ). Further, FIG. 2(B) is a cross-sectional view of a portion indicated by a one-dot chain line of Y1-Y2 in FIG. 1(A ).

[0064] The electronic device 100 includes a housing 101, an audio output device 102, an operation switch 103, and an audio input device 104, an imaging device 105, a display device 110, and the like. The display device 110 has a display area 111 that overlaps the front of the electronic device 100, a display area 112 that overlaps the left side of the electronic device 100, and a display area 113 that overlaps the right side of the electronic device 100.

[0065] In addition, the electronic device 100 includes a circuit board 160, a battery 170, an antenna 180, and the like (see FIGS. 2(A) and (B)). Further, an arithmetic device 161, a communication device 162, a storage device 163, a display unit control device 164, an attitude detection unit 165, and the like are provided on the circuit board 160. Note that other semiconductor devices and the like may be provided in the area 151 within the housing 101 . Further, functional members such as a heat dissipation member, a member that absorbs or shields electromagnetic waves, and / or a member that shields magnetism may be provided in the area 151.

[0066] [Hardware configuration example] Hereinafter, a hardware configuration example applicable to the electronic device 100 will be described.

[0067] FIG. 3 is a block diagram showing an example of a configuration applicable to the electronic device 100. As shown in FIG.

[0068] In the drawings attached to this specification, the components are classified by function and are shown as independent blocks. Although the block diagram is shown as a block, the actual components are not completely separated by function. It is difficult to do this, and one component may be involved in multiple functions, or one function may involve multiple components. It may also be related to.

[0069] The configuration of the electronic device 100 illustrated in FIG. 3 is an example, and it is not necessary to include all of the components. The electronic device 100 only needs to include the necessary components among the components shown in FIG. Furthermore, the device may have components other than those shown in FIG.

[0070] The electronic device 100 includes a display device 110, a computing device 161, a touch sensor 131, a storage device 1 63, display control device 164, touch sensor controller 132, battery controller 171, power receiving unit 172, battery 170, sound controller 169, voice input device 1 04, audio output device 102, communication device 162, antenna 180, attitude detection unit 165, external an interface 168, an imaging device 105, a vibration device 166, a sensor module 167, etc.

[0071] Storage device 163, display control device 164, touch sensor controller 132, battery controller 171, sound controller 169, communication device 162, attitude detection unit 165, External interface 168, imaging device 105, vibration device 166, sensor module 16 7 and the like are connected to the arithmetic unit 161 via a bus line 141.

[0072] The touch sensor 131 may be provided on top of the display device 110. The function of the first embodiment may be given to the display device 110.

[0073] The arithmetic unit 161 is, for example, a central processing unit (CPU). The arithmetic unit 161 can function as, for example, a touch sensor. Controller 132, battery controller 171, sound controller 169, communication device 162, a posture detection unit 165, an external interface 168, an imaging device 105, a vibration device The controller 164 has a function to control each component such as the device 166, the sensor module 167, etc. The device 161 may be provided with functions such as a storage device 163 and a display control device 164. stomach.

[0074] Signals are transmitted between the arithmetic unit 161 and each component via a bus line 141. The arithmetic unit 161 receives inputs from the components connected via the bus line 141. It has functions to process the signals that are input and to generate the signals that are output to each component. and can comprehensively control each component connected to the bus line 141. .

[0075] Note that a channel is formed in the arithmetic unit 161 or an IC included in another component. An extremely low off-state current is achieved by using an oxide semiconductor, a type of metal oxide, for the semiconductor layer. Since the off-state current of the transistor is extremely low, Therefore, the transistor functions as a memory element to store the charge (data) flowing into the capacitor element. By using it as a switch to keep data, it is possible to ensure long-term data retention. By using this characteristic in the registers and cache memory of the arithmetic unit 161, The arithmetic unit 161 is operated only when necessary, and in other cases, the information of the immediately preceding processing is stored in the memory element. By evacuating the power to a remote computer, normally-off computing becomes possible, and electronic devices 100 can achieve low power consumption.

[0076] The arithmetic unit 161 interprets and executes instructions from various programs using a processor. It processes various data and controls programs. may be stored in a memory area of ​​the processor or may be stored in the storage device 163. It may also be used.

[0077] The arithmetic unit 161 may include a CPU as well as a DSP (Digital Signal Processor). processor), GPU (Graphics Processing Unit), etc. Other microprocessors may be used alone or in combination. The microprocessor is implemented as an FPGA (Field Programmable Gate Array rray) and FPAA (Field Programmable Analog Arr Programmable Logic Devices (PLDs) such as The configuration may be realized by the above.

[0078] The computing device 161 may have a main memory. The main memory may include RAM (Random Access Memory). volatile memory such as ROM (Read-Only Access Memory) and The configuration may include a nonvolatile memory such as a nonvolatile memory.

[0079] The RAM provided in the main memory is, for example, DRAM (Dynamic Random Access Memory). The virtual memory (VM) is used as the working space of the arithmetic unit 161. The memory space is allocated and used automatically. Operating systems, application programs, program modules, program data, etc. These data and programs loaded into RAM are then executed. RAM and program modules are directly accessed and operated by the processing unit 161.

[0080] On the other hand, ROM has a BIOS (Basic Input / Output) that does not require rewriting. It can store the ROM, such as the ROM (System), firmware, etc. ROM and OTPROM (One Time Programmable Read Only Memory) Only Memory), EPROM (Erasable Programmability) EPROM can be used. UV-EPROM (Ultra-Vision), which allows data to be erased by exposure to ultraviolet light. olet Erasable Programmable Read Only Mem ory), EEPROM (Electrically Erasable Program memory, and flash memory. do.

[0081] The storage device 163 may be, for example, a flash memory or an MRAM (Magnetores istive Random Access Memory), PRAM (Phase change RAM), ReRAM (Resistance RAM), FeRAM ( Storage devices that use nonvolatile memory elements such as ferroelectric RAM , or DRAM (Dynamic RAM) or SRAM (Static RAM), etc. Alternatively, a storage device using a volatile storage element such as a hard disk may be used. Hard Disk Drive (HDD) and Solid State Drive (S A recording media drive such as a Solid State Drive (SSD) may also be used. stomach.

[0082] In addition, a removable HDD or SS can be connected via an external interface 168. storage devices such as D, flash memory, Blu-ray discs, DVDs, and other recording media A media drive can also be used as the storage device 163. A storage device that is not built into the electronic device 100 but is placed outside the electronic device 100 is referred to as a storage device 163. In this case, the external interface 168 may be connected to the The communication device 162 may be configured to exchange data wirelessly.

[0083] The display control device 164 is connected to the arithmetic device 161 via the bus line 141. The display control unit 164 is connected to the display device 110. In response to a drawing instruction input from 161, the display device 110 is controlled to display a corresponding image. It has the function of displaying a specific image.

[0084] The touch sensor 131 is connected to a touch sensor controller 132. The controller 132 is connected to the arithmetic unit 161 via a bus line 141 .

[0085] The touch sensor controller 132 receives data from the arithmetic unit 161 via the bus line 141. In response to the request from the touch sensor 131, the touch sensor 131 is controlled. , and output to the arithmetic unit 161 via the bus line 141. The touch sensor controller 132 has a function of calculating touch position information from the signal. Alternatively, the calculation may be performed by the arithmetic unit 161.

[0086] The touch sensor 131 also operates based on a signal supplied from the touch sensor controller 132. It detects the approach or contact of a sensing object such as a finger or stylus and The position information can be output to the touch sensor controller 132.

[0087] The touch sensor 131 and the touch sensor controller 132 are also It is preferable that the device has a function of acquiring the distance in the height direction to the detection object. It is preferable that the sensor has a function of acquiring the magnitude of the pressure applied to the detection surface. It is preferable that the device has a function of acquiring the size of the area where the body is in contact with the detection surface.

[0088] The touch sensor 131 is a module having a touch sensor, which is placed on the display surface side of the display panel. In this case, the module having the touch sensor may be configured to include a It is preferable that at least a part of the display panel is flexible and can be bent along the display panel. The module equipped with the touch sensor and the display panel can be bonded together with adhesive or the like. A polarizing plate or a buffer material (separator) may be provided between them. The thickness of the module is preferably equal to or less than the thickness of the display panel.

[0089] The touch sensor 131 may be a touch panel in which the display device and the touch sensor are integrated. For example, it can be an on-cell type touch panel or an in-cell type touch panel. On-cell or in-cell touch panels are preferred because they are thin and lightweight. Furthermore, on-cell or in-cell touch panels can reduce the number of components. Therefore, costs can be reduced.

[0090] The touch sensor 131 detects the approach or contact of a detection target such as a finger. Various sensors can be applied, such as capacitance type, resistive type, surface acoustic wave type, infrared type, etc. Sensors that use a line method, an electromagnetic induction method, an optical method, or the like can be used. In addition, optical sensors using photoelectric conversion elements and pressure-sensitive sensors using pressure-sensitive elements are also used. Also, two or more types of sensors of different types may be provided, or two or more types of sensors of the same type may be provided. It may have two or more of these.

[0091] For example, a capacitive touch sensor includes a pair of conductive layers. When the object to be detected touches, presses, or approaches the pair of conductive layers, The change in the magnitude of the capacitance between the pair of conductive layers can be utilized for detection.

[0092] The capacitive touch panel includes a surface capacitive touch panel and a projected capacitive touch panel. The capacitance type is classified into a self-capacitance type, a mutual capacitance type, and the like, mainly depending on the driving method. The mutual capacitance method is preferable because it facilitates simultaneous multipoint detection.

[0093] The battery controller 171 can manage the charging state of the battery 170. The battery controller 171 supplies power from the battery 170 to each component. The power receiving unit 172 receives power supplied from an external source and charges the battery 170. The battery controller 171 controls the power reception according to the charge state of the battery 170. The operation of the unit 172 can be controlled by the controller 172.

[0094] The battery 170 includes, for example, one or more primary batteries or secondary batteries. Examples of secondary batteries that can be used include lithium ion secondary batteries and lithium ion batteries. In addition to such batteries, the battery 170 may also include A protection circuit may be provided to prevent overcharging and over-discharging of the battery.

[0095] When used indoors, an alternating current (AC) power supply may be used as the external power source. When the electronic device 100 is used separately from an external power source, the charge / discharge capacity is large and the charge / discharge time is long. A battery 170 that can power the electronic device 100 for a long period of time is desirable. When charging the electronic device 100, a charger capable of supplying power to the electronic device 100 may be used. When using the USB (Universal Serial Bus) connector or AC adapter, Charging can be performed using a wired method, or by using electric field coupling, electromagnetic induction, or electromagnetic resonance (electromagnetic The charging may be performed by a wireless power supply method such as a resonant coupling method.

[0096] The battery controller 171 includes, for example, a battery management unit (BMU). The BMU collects data on the battery cell voltage and temperature, and detects overcharge and overdischarge. Monitoring, cell balancer control, battery deterioration status management, remaining battery level (State Of Charge It calculates the SOC (state of charge), controls fault detection, etc.

[0097] The battery controller 171 receives power from the battery 170 via a power supply line (not shown). The battery controller 171 controls the power supply to each component. The power converter may have a configuration including, for example, a power converter, an inverter, a protection circuit, etc. It is possible.

[0098] The housing 101 in which the battery 170 is incorporated is flexible and can be bent for use. In some configurations, at least a portion of the battery 170 may also be flexible. A secondary battery that can be used as the battery 170 is, for example, a lithium ion secondary battery. and lithium ion polymer secondary batteries. To achieve this, it is advisable to use a laminated bag for the battery outer container.

[0099] The film used for laminated bags is a metal film (aluminum, stainless steel, nickel steel) etc.), plastic film made of organic materials, organic materials (organic resins and fibers etc.) and inorganic materials Hybrid material films containing organic materials (ceramics, etc.), carbon-containing inorganic films ( a single layer film selected from the group consisting of carbon film, graphite film, etc. A laminated film consisting of multiple layers is used. Metallic films are easy to emboss, and By forming a concave or convex portion through boss processing, the surface area of ​​the film exposed to the outside air increases. Therefore, it has excellent heat dissipation effect.

[0100] In particular, as a laminated bag, a metal film with concave and convex parts formed by embossing is used. When a laminated bag having such a structure is used, the strain caused by the stress applied to the laminated bag is reduced. As a result, the laminated bag does not tear when the secondary battery is bent. This is preferable because it can effectively reduce problems such as cracking.

[0101] Furthermore, it is preferable that the battery controller 171 has a power consumption reduction function. For example, as a power saving function, the electronic device 100 may detect that there is no input for a certain period of time and perform an operation. The clock frequency of the computing device 161 is reduced or the clock input is stopped. 161 itself, the auxiliary memory, and each component. This can be achieved by reducing the amount of power supplied to the power source, thereby reducing power consumption. The functions can be performed by the battery controller 171 alone or in conjunction with the computing device 161. It can be executed.

[0102] The audio input device 104 includes, for example, a microphone and an audio input connector. The audio output device 102 includes, for example, a speaker and an audio output connector. 104 and the audio output device 102 are connected to a sound controller 169. The voice input device 104 is connected to the arithmetic unit 161 via the line 141. The voice data is converted into a digital signal in the sound controller 169. The sound is processed by the sound controller 169 and the arithmetic unit 161. 69 generates an audio signal audible to the user in response to a command from the computing device 161, and outputs the audio signal. The audio output device 102 has an audio output connector to which an earphone is connected. You can connect audio output devices such as a microphone, headphones, or headset, and connect the sound controller to the device. The sound generated by the controller 169 is output.

[0103] The communication device 162 can communicate via an antenna 180. For example, the computing device 1 61 to connect the electronic device 100 to a computer network. The Wo The World Wide Web (WWW) is based on the Internet, intranets, and Xtranet, PAN (Personal Area Network), LAN (L ocal Area Network), CAN(Campus Area Network), CAN(Campus Area Network) rk), MAN (Metropolitan Area Network), WAN (W ide Area Network), GAN (Global Area Network) k) The electronic device 100 can be connected to a computer network such as In addition, when multiple communication methods are used, the antenna 180 is There may be multiple of them depending on the law.

[0104] The communication device 162 is provided with, for example, a high frequency circuit (RF circuit) for transmitting and receiving RF signals. High-frequency circuits are used to communicate electromagnetic signals and electrical signals in the frequency bands specified by the laws of each country. and converts the electromagnetic signals into one another and communicates wirelessly with other communication devices using the electromagnetic signals. A practical frequency band generally used is from several tens of kHz to several tens of GHz. The high frequency circuit connected to the antenna 180 has circuit parts corresponding to a plurality of frequency bands. The circuit section includes an amplifier, a mixer, a filter, a DSP, an RF transceiver, etc. When wireless communication is performed, a communication protocol or a communication technology may be used. LTE (Long Term Evolution), GSM (Global Standard Mobile Communication) System for Mobile Communication (registered trademark), EDG E(Enhanced Data Rates for GSM Evolution) , CDMA2000(Code Division Multiple Access 2000), WCDMA (Wideband Code Division Multi ple Access (registered trademark), or Wi-Fi (registered trademark), B Communication standards established by IEEE such as Bluetooth (registered trademark) and ZigBee (registered trademark) A standardized specification can be used.

[0105] The communication device 162 may also have a function of connecting the electronic device 100 to a telephone line. When making a call through a telephone line, the communication device 162 receives a command from the arithmetic device 161. In response to the signal, the electronic device 100 is controlled to connect to a telephone line. Call the phone line.

[0106] The communication device 162 receives broadcast waves via an antenna 180 and outputs the signals to the display device 110. For example, the tuner may include a demodulation circuit and a configuration including an AD conversion circuit (analog-to-digital conversion circuit), a decoder circuit, etc. The demodulation circuit has a function of demodulating a signal input from the antenna 180. The AD conversion circuit also has the function of converting the demodulated analog signal into a digital signal. The decoder circuit also decodes the video data contained in the digital signal and controls the display. It has the function of generating a signal to be transmitted to device 164.

[0107] The decoder may also have a dividing circuit and a plurality of processors. It has the function of dividing the input video data spatially and temporally and outputting it to each processor. The processors decode the input video data and send it to the display control device 164. In this way, as a decoder, multiple processors are used to generate the signal to be transmitted. By applying a configuration that processes multiple signals in parallel, it is possible to decode video data with an extremely large amount of information. In particular, when displaying images with a resolution exceeding full high definition, The decoder circuit that decodes the compressed data is a processor with extremely high processing speed. For example, the decoder circuit has four or more, preferably eight or more. More preferably, the configuration includes a plurality of processors capable of parallel processing of 16 or more. The decoder is also preferably configured to separate the video signal contained in the input signal from the other signals. It may also have a circuit for separating the information (text information, program information, authentication information, etc.).

[0108] The broadcasting waves that can be received by the antenna 180 include terrestrial waves and satellite broadcasts. In addition, the broadcasting radio waves that can be received by the antenna 180 include analog There are broadcasts, digital broadcasts, video and audio broadcasts, and audio-only broadcasts. For example, UHF band (approximately 300MHz to 3GHz) or VHF band (30MHz to 300M It is possible to receive broadcast radio waves transmitted in a specific frequency band of 100 Hz. For example, by using multiple data received in multiple frequency bands, the transfer rate can be increased. This allows you to see more information than ever before, even beyond full HD. The display device 110 can display an image having a resolution of, for example, 4K2K, It can display images with resolutions of 8K4K, 16K8K, or higher. .

[0109] The tuner was also transmitted via data transmission technology over a computer network. A signal to be transmitted to the display control device 164 may be generated using broadcast data. At this time, if the received signal is a digital signal, the tuner will have a demodulation circuit and an A -D conversion circuit may not be included.

[0110] The posture detection unit 165 has a function of detecting the tilt and posture of the electronic device 100. For example, The momentum detection unit 165 may include an acceleration sensor, an angular velocity sensor, a vibration sensor, a pressure sensor, a jack A color sensor or the like can be used. In addition, a combination of these sensors can also be used. good.

[0111] The external interface 168 may be, for example, one or more buttons provided on the housing 101. External ports to which you can connect switches (also called chassis switches) and other input components. The external interface 168 is connected to the computer via the bus line 141. The housing switch is connected to the device 161. There are buttons for adjusting the volume, a button for taking pictures with the camera, etc.

[0112] The external interface 168 has an external port, for example, a computer or a processor. The printer can be connected to an external device via a cable. There are also external ports such as a USB port and a LAN (Local Area Network) port. Network connection terminal, digital broadcast reception terminal, AC adapter connection terminal In addition to wired communication, optical communication using infrared light, visible light, ultraviolet light, etc. may also be used. A configuration may be adopted in which a transceiver for communication is provided.

[0113] The image pickup device 105 is connected to the arithmetic unit 161 via a bus line 141. When a switch provided on the touch sensor 131 is pressed or when a touch operation is performed on the touch sensor 131, The imaging device 105 can capture still images or videos. For example, lamps such as xenon lamps, light emitting devices such as LEDs and organic EL devices, etc. Alternatively, the display device 110 may be used as a light source for photography. In this case, light of various colors, not just white, may be used for photography.

[0114] The vibration device 166 includes a vibration element that vibrates the electronic device 100 and a vibration controller that controls the vibration element. The vibration element includes a vibration motor (eccentric motor), a resonance actuator, and Elements that can convert electric or magnetic signals into vibrations, such as magnetostrictive elements and piezoelectric elements A child can be used.

[0115] The vibration device 166 controls the frequency and amplitude of the vibration of the vibration element in response to an instruction from the arithmetic unit 161. By controlling the vibration period, the electronic device 100 can be vibrated in various vibration patterns. For example, vibrations linked to the operation of a housing switch, etc., electronic device 1 Vibration linked to the startup of 00, linked to video and audio played in video playback applications vibration linked to the arrival of an email; vibration linked to an input operation to the touch sensor 131; Various vibration patterns based on the actions performed in various applications, such as vibrations generated by the The vibrations can be emitted by a vibration device 166.

[0116] The sensor module 167 includes a sensor unit and a sensor controller. The controller supplies power to the sensor unit from a battery 170 or the like. The controller receives input from the sensor unit, converts it into a control signal, and transmits it on the bus line 141. The sensor controller outputs the signal to the arithmetic unit 161 via the The sensor control may be performed, or the sensor unit may be calibrated. The controller may be configured to include a plurality of controllers for controlling the sensor units.

[0117] The sensor module 167 receives, for example, force, displacement, position, velocity, acceleration, angular velocity, rotation speed, distance Distance, light, liquid, magnetism, temperature, chemicals, sound, time, hardness, electric field, current, voltage, power, radiation Various sensors that have the function of measuring line, flow rate, humidity, gradient, vibration, smell or infrared It may also be configured to include:

[0118] The above is a description of an example of a hardware configuration applicable to electronic device 100.

[0119] <Display device 110> 4A is a perspective view of the display device 110. FIG. 4B is a plan view of the display device 110. As described above, the display device 110 has a display area 111, a display area 112, and a display The display area 111, the display area 112, and the display area 113 are Each has a plurality of pixels 230 arranged in a matrix.

[0120] When 230 pixels are arranged in a 1920 x 1080 matrix, it becomes what is called full high-definition. (also known as "2K resolution," "2K1K," or "2K") In addition, for example, the pixel size can be set to 3840 x 2160. When arranged in a matrix, it can produce what is known as ultra-high definition (4K resolution, 4K2 It is possible to realize a display device 110 capable of displaying at a resolution of 1080p (also called "4K" or "5K"). In addition, for example, if the pixels are arranged in a 7680 x 4320 matrix, So-called Super Hi-Vision (also known as "8K resolution", "8K4K", "8K", etc.) It is possible to realize a display device 110 capable of displaying at a resolution of 1000x1000. Therefore, it is possible to realize a display device 110 capable of displaying at a resolution of 16K or 32K.

[0121] The display device 110 also has an input terminal 121, an input terminal 122, and an input terminal 123. The input terminal 121 is electrically connected to the display area 111. The input terminal 122 is electrically connected to the display area 111. The input terminal 123 is electrically connected to the display area 113. It continues.

[0122] The input terminals 121, 122, and 123 are connected to the display control device 16. The display control device 164 is electrically connected to the display area 111, the display area 112, and the display area 113, respectively, and has a function of supplying a signal for displaying an image. .

[0123] A signal for displaying an image on the display area 111 is input to the display area 111 via an input terminal 121. A signal for displaying an image in the display area 112 is supplied to A signal for displaying an image on the display area 113 is supplied to the input terminal 123 to the display area 113.

[0124] The input terminals 121, 122, and 123 are bent within the housing 101, and the circuit It is electrically connected to a display control device 164 provided on the substrate 160 .

[0125] The display device 110 also has a curved region 114 between the display region 111 and the display region 112. The display device 110 has a bending region 115 between the display region 111 and the display region 113. is bent at the bending region 114 and the bending region 115 and placed in the housing 101, The display area 111 can be arranged on the front surface of the electronic device 100. The display area 112 can be placed on the left side of the electronic device 100. A display area 113 can be placed on the right side of the display area 113 .

[0126] In addition, the curved region 114 and the curved region 115 are provided with the display region 111, the display region 112, and the In particular, the display area 113 is not provided with wiring or electrodes for transmitting signals. In the region 114, wiring and electrodes for electrically connecting the display region 111 and the display region 112 are provided. In addition, the display area 111 and the display area 113 are electrically connected to the bending area 115. No wiring or electrodes are provided for this purpose.

[0127] FIG. 5 is a perspective view of the display device 110 in a state where it is bent at the bending region 114 and the bending region 115. The figure shows that the bending region 114 and the bending region 115 are not provided with wiring or electrodes. Even if the curvature radius R of the display device 11 is reduced, the display device 11 may be damaged due to short circuits or breakage of wiring or electrodes. Specifically, the radius of curvature R is set to 1 mm or less. Alternatively, the radius of curvature R can be set to 0.5 mm or less. The radius of curvature R can be set to 0.1 mm or less.

[0128] This embodiment mode can be implemented by being appropriately combined with the configurations described in other embodiments. is.

[0129] (Embodiment 2) In this embodiment, a more specific structural example of the display device 110 of one embodiment of the present invention will be described. do.

[0130] FIG. 6A is a block diagram illustrating an example of the configuration of the display device 110. , a circuit 232a may be provided between the input terminal 121 and the display area 111. A circuit 233a may be provided between the terminal 121 and the display area 111. 22 and the display area 112. A circuit 233b may be provided between the input terminal 123 and the display area 112. A circuit 232c may be provided between the input terminal 123 and the display area 113. 3, a circuit 233c may be provided between them.

[0131] The circuit 232a, the circuit 232b, and the circuit 232c function as, for example, a scanning line driving circuit. The circuit 233a, the circuit 233b, and the circuit 233c are, for example, signal line driving circuits. The circuit 232a, the circuit 232b, the circuit 232c, the circuit 233a, and the circuit 233b function as follows: The circuit 233c may be collectively referred to as a drive circuit section. It may be provided in the area.

[0132] In addition, a part or all of the drive circuitry may be integrated into an IC and mounted on the display device 110. ,In Fig. 7(A), IC373a, I 1 shows a perspective view of a display device 110 on which IC373b and IC373c are mounted.

[0133] It is possible to configure the display device without at least one of the display area 112 and the display area 113. 7B shows a perspective view of the display device 110 that does not have a display region 113.

[0134] Next, configuration examples of the display area 111, the circuit 232a, and the circuit 233a will be described. The display area 112, the circuit 232b, the circuit 233b, and the display area 11 3, the circuit 232c, and the circuit 233c also correspond to the display area 111, the circuit 232a, and the circuit A similar configuration to 233a can be used.

[0135] <Configuration example 1> FIG. 6B illustrates a configuration example of the display region 111, the circuit 232a, and the circuit 233a. FIG.

[0136] The display area 111 also has m wires 235 and n wires 236. The wirings 235 are arranged approximately in parallel with each other, and the potentials of the wirings 235 are controlled by the circuit 232a. The n wirings 236 are arranged approximately in parallel with each other, and the potentials of the wirings 236 are controlled by the circuit 233a. Furthermore, the display area 111 has a plurality of pixels 230 arranged in a matrix. .

[0137] Each wiring 235 is connected to any one of the pixels 230 arranged in m rows and n columns in the display area 111. Each wiring 236 is electrically connected to n pixels 230 arranged in a row. Among the pixels 230 arranged in m rows and n columns, m pixels 230 arranged in any one of the columns They are electrically connected. Both m and n are integers of 1 or more.

[0138] The pixel 230 includes a pixel circuit 237 and a display element 225. The pixel circuit 237 includes a display element The transistors in the driving circuit section drive the pixel circuit 237. That is, the transistors disclosed in the present specification can be formed at the same time as the transistors. A part of or the whole of the driver circuit portion is formed on the same substrate as the pixel portion using transistors, A system on panel can be formed.

[0139] In addition, a part or the whole of the driving circuit section is formed on another substrate, and the display device 110 is electrically connected to the driving circuit section. For example, a part or the whole of the driver circuit section may be formed using a single crystal substrate, It may be electrically connected to the display device 110.

[0140] Also, a pixel 230 that emits or reflects red light, a pixel 240 that emits or reflects green light, 30 and the pixel 230 that emits or reflects blue light together function as one pixel. By controlling the amount of light emitted by each pixel, a full color display can be achieved. Therefore, the three pixels function as sub-pixels. The color of the reflected light is not limited to a combination of red, green, and blue, but can also be yellow, cyan, and magenta. Good too.

[0141] Alternatively, four sub-pixels may be combined to function as one pixel. For example, red light, green light, Three sub-pixels emit or reflect colored light, blue light, and one sub-pixel emits or reflects white light. By adding sub-pixels that emit or reflect white light, the display The brightness of the display area can be increased by increasing the number of sub-pixels that function as one pixel. Light-emitting or reflective sub-pixels such as red, green, blue, yellow, cyan, and magenta are appropriately By using them in combination, the reproducible color gamut can be expanded.

[0142] [Display element] The display device according to one embodiment of the present invention may have various forms or various display elements. An example of a display element is an electroluminescence (EL) element (organic EL elements, including organic and inorganic materials, organic EL elements, inorganic EL elements), LEDs (white LEDs, Red LED, green LED, blue LED, etc.), transistors (transistors that emit light according to the current Transistors), electron emission elements, liquid crystal elements, electronic ink, electrophoretic elements, grating lights Using a gas valve (GLV) and a microelectromechanical system (MEMS) display element, digital micromirror device (DMD), digital micro shutter DMS, MIRASOL®, Interferometric Modulator IMOD element, shutter-type MEMS display element, optical interference MEMS display display element, electrowetting element, piezoelectric ceramic display, carbon nanotube Display elements using tubes, etc., that use electrical or magnetic effects to improve contrast, brightness, There are display media that change reflectivity, transmittance, etc. Also, quantum dots are used as display elements. An example of a display device using an EL element is an EL display. An example of a display device using electron emission elements is a field emission display (F ED) or surface-cond Electron-emitter Display). An example of a display device using dots is a quantum dot display. An example of a display device using the liquid crystal display (transmissive liquid crystal display, semi-transmissive liquid crystal display) is LCD display, reflective LCD display, direct view LCD display, projection LCD display Electronic ink, electronic liquid powder, or electrophoretic elements are used. An example of a display device that uses this technology is electronic paper. It may be a display panel (PDP).

[0143] When realizing a semi-transmissive or reflective LCD display, the pixel voltage A part or all of the electrodes may be made to function as a reflective electrode. For example, A part or all of the pixel electrodes may be made of aluminum, silver, or the like. Furthermore, in this case, it is also possible to provide a memory circuit such as an SRAM below the reflective electrode. This further reduces power consumption.

[0144] When using an LED, graphene or graphene is placed under the LED electrode or nitride semiconductor. Graphene and graphite can be arranged in layers to form a multilayer film. In this way, by providing graphene or graphite, it is possible to form a nitride layer on the graphene or graphite. Semiconductors, such as n-type GaN semiconductor layers having crystallinity, can be easily formed. Furthermore, a p-type GaN semiconductor layer having crystals is formed on top of that to form an LED. It is possible to combine graphene or graphite with a crystalline n-type GaN semiconductor layer. An AlN layer may be provided between the GaN layer and the GaN layer. Metal Organic Chemical Vapor Deposition) However, by providing graphene, the GaN semiconductor of the LED can be The body layer can also be formed by sputtering.

[0145] 8(A) and 8(B) show examples of circuit configurations that can be used for the pixel 230. do.

[0146] [Example of a pixel circuit for a light-emitting display device] The pixel circuit 237 shown in FIG. 8A includes a transistor 431, a capacitor 438, and a transistor The pixel circuit 237 includes a display element 8A, a light-emitting element is used as the display element 225. 2 shows a pixel circuit 237 in this case.

[0147] One of the source and drain of the transistor 431 is connected to a wiring to which a data signal is applied (hereinafter referred to as Further, the gate of the transistor 431 is electrically connected to the signal line DL_n. The gate is electrically connected to a wiring (hereinafter referred to as a scanning line GL_m) to which a gate signal is given. do.

[0148] The transistor 431 has a function of controlling writing of a data signal to the node 435. .

[0149] One of a pair of electrodes of the capacitor 438 is electrically connected to the node 435, and the other is The source and drain of the transistor 431 are electrically connected to the gate 437. One is electrically connected to node 435 .

[0150] The capacitor 438 functions as a storage capacitor that stores data written to the node 435. It has.

[0151] One of the source and drain of the transistor 433 is electrically connected to the potential supply line VL_a. The other end is electrically connected to a node 437. The port is electrically connected to node 435.

[0152] One of the source and drain of the transistor 434 is electrically connected to the potential supply line V0. The other end is electrically connected to node 437. Furthermore, the gate of transistor 434 is , and are electrically connected to the scanning line GL_m.

[0153] One of the anode and cathode of the light-emitting element (display element 225) is connected to the potential supply line VL_b. one electrically connected to node 437 and the other electrically connected to node 437.

[0154] The light-emitting element may be, for example, an organic electroluminescence element (also called an "organic EL element"). However, the light emitting element is not limited to this, and for example, an inert An inorganic EL element made of organic materials may also be used. In addition to visible light, it can also emit infrared light and ultraviolet light.

[0155] For example, a high power supply potential VDD is applied to one of the potential supply lines VL_a and VL_b. and the other is supplied with a low power supply potential VSS.

[0156] In the display device having the pixel circuit 237 of FIG. 8A, for example, the pixel circuit 232a The element circuits 237 are sequentially selected, and the transistors 431 and 434 are turned on. and writes the data signal to node 435.

[0157] The pixel circuit 237 in which data is written to the node 435 is connected to the transistor 431 and the transistor The transistor 434 is turned off, which results in a holding state. A current flows between the source and drain of the transistor 433 according to the potential of the input data. The amount of current flowing through the light emitting element is controlled, and the light emitting element emits light at a brightness corresponding to the amount of current flowing through the light emitting element. By doing so, the image can be displayed.

[0158] [An example of a pixel circuit for a liquid crystal display device] The pixel circuit 237 shown in FIG. 8B includes a transistor 431 and a capacitor 438. FIG. 8B shows a pixel circuit 237 in which a liquid crystal element is used as the display element 225. is doing.

[0159] The potential of one of the pair of electrodes of the display element 225 (liquid crystal element) is set according to the specifications of the pixel circuit 237. The display element 225 (liquid crystal element) is set appropriately by the data written to the node 436. The orientation state is set by the display element of each of the plurality of pixel circuits 237. A common potential may be applied to one of the pair of electrodes 225. A different potential may be applied to one of the pair of electrodes of the display element 225 for each pixel circuit 237 .

[0160] As a driving method of a display device including a liquid crystal element, for example, TN mode, STN mode, V A mode, ASM (Axially Symmetric Aligned Micro -cell) mode, OCB (Optically Compensated Bias fringence mode, FLC (Ferroelectric Liquid Crystal Crystal mode, AFLC (AntiFerroelectric Liquid Crystal mode, MVA mode, PVA (Patterned Vertic Alignment) mode, IPS mode, FFS mode, or TBA (Tr You can also use the (Ansverse Bend Alignment) mode. In addition to the above-mentioned driving method, the display device can also be driven by an ECB (Electric Carrier Backplane). Controlled Birefringence mode, PDLC (Poly mer Dispersed Liquid Crystal) mode, PNLC (Po lymer Network Liquid Crystal mode, guest host mode However, there are various types of liquid crystal elements and their driving methods, without being limited to these. can be used.

[0161] In addition, a liquid crystal composition containing a liquid crystal exhibiting a blue phase and a chiral agent The display element 225 (liquid crystal element) may be configured by the above. The liquid crystal that exhibits the blue phase has a response speed of It is short (less than 1 msec) and optically isotropic, so alignment processing is not required and it does not depend on the viewing angle. The reliability is low.

[0162] In the pixel circuit 237 in the mth row and the nth column, one of the source and drain of the transistor 431 One is electrically connected to the signal line DL_n, and the other is electrically connected to the node 436 . The gate of the transistor 431 is electrically connected to the scan line GL_m. 31 has a function of controlling the writing of a data signal to the node 436 .

[0163] One of a pair of electrodes of the capacitor 438 is connected to a wiring (capacitor line CL) to which a specific potential is supplied. The other end is electrically connected to node 436. The other of the pair of electrodes of the liquid crystal element is electrically connected to the node 436. The value of this potential is set appropriately according to the specifications of the pixel circuit 237. It functions as a storage capacitor that stores data written in the memory card 436 .

[0164] For example, in a display device having the pixel circuit 237 shown in FIG. 8B, The pixel circuits 237 in each row are selected in sequence, and the transistors 431 are turned on to turn on the node 436. Write the data signal to

[0165] In the pixel circuit 237 in which the data signal is written to the node 436, the transistor 431 is turned off. By performing this process for each row, the display area 111 You can display images.

[0166] <Configuration example 2> Next, as the display element 225, a transmissive liquid crystal element having both a reflective liquid crystal element and a light emitting element is used. An example of the configuration of the display area 111 that can perform display in both the polarized and reflective modes will be described.

[0167] FIG. 9A illustrates a configuration example of the display region 111, the circuit 232a, and the circuit 233a. The display area 111 includes a plurality of pixels 230 arranged in a matrix, a plurality of Wiring G1, multiple wiring G2, multiple wiring ANO, multiple wiring CSCOM, multiple wiring S The wiring S2 includes wiring G1, wiring G2, wiring ANO, and wiring CSC. The OM is electrically connected to the plurality of pixels 230 arranged in the direction R and the circuit 232a. 1 and wiring S2 are electrically connected to a plurality of pixels 230 arranged in the direction C and the circuit 233a. do.

[0168] Although FIG. 9A illustrates a configuration including one circuit 232a and one circuit 233a, , a circuit 232a and a circuit 233a for driving the liquid crystal element, and a circuit 23 2a and circuit 233a may be provided separately.

[0169] The pixel 230 includes a reflective liquid crystal element and a light emitting element. The element and the light-emitting element have overlapping portions.

[0170] FIG. 9B1 shows a structural example of the electrode 311 included in the pixel 230. The electrode 311 functions as a reflective electrode for the liquid crystal element in 30. An opening 451 is also provided in the electrode 311. It is being used.

[0171] In FIG. 9(B1), the light emitting element 360 located in the area overlapping with the electrode 311 is shown by a broken line. The light emitting element 360 is arranged so as to overlap the opening 451 of the electrode 311. As a result, the light emitted by the light emitting element 360 is emitted to the display surface side through the opening 451.

[0172] In FIG. 9(B1), pixels 230 adjacent in the direction R correspond to different luminescent colors. At this time, as shown in FIG. 9(B1), the openings 45 are formed in two pixels adjacent to each other in the direction R. It is preferable that the electrodes 311 are provided at different positions so that the electrodes 311 are not arranged in a line. This allows the two light emitting elements 360 to be spaced apart, and the light emitted by the light emitting elements 360 The phenomenon where light from the adjacent pixel 230 is incident on the colored layer of the adjacent pixel 230 (also known as "crosstalk") ) can be suppressed. In addition, by arranging two adjacent light emitting elements 360 apart from each other, Therefore, in the case where the EL layer of the light emitting element 360 is separately formed using a shadow mask or the like, Even so, a high-definition display device can be realized.

[0173] Alternatively, an arrangement such as that shown in FIG. 9(B2) may be used.

[0174] If the ratio of the total area of ​​the openings 451 to the total area of ​​the non-openings is too large, it is difficult to obtain a satisfactory image using a liquid crystal element. In addition, the ratio of the total area of ​​the openings 451 to the total area of ​​the non-openings is If the value is too small, the display using the light emitting element 360 will be too dark.

[0175] Furthermore, if the area of ​​the opening 451 provided in the electrode 311 that functions as a reflective electrode is too small, the light This reduces the efficiency of light that can be extracted from the light emitted by the optical element 360.

[0176] The shape of the opening 451 may be, for example, a polygon, a rectangle, an ellipse, a circle, a cross, or the like. It may also be in the form of thin stripes, slits, or a checkered pattern. The apertures 451 may be arranged close to adjacent pixels. Preferably, the apertures 451 are arranged so that they display the same color. This arrangement makes it possible to suppress crosstalk.

[0177] [Circuit configuration example] 10 is a circuit diagram showing a configuration example of the pixel 230. In FIG. 10, two adjacent pixels 2 It shows 30.

[0178] The pixel 230 includes a switch SW1, a capacitance element C1, a liquid crystal element 340, a switch SW2, a transistor The pixel 230 includes a transistor M, a capacitance element C2, and a light emitting element 360. Wire G1, wire G2, wire ANO, wire CSCOM, wire S1, and wire S2 are electrically 10, the wiring VCOM electrically connected to the liquid crystal element 340 is 1 and a wiring VCOM2 electrically connecting to the light emitting element 360.

[0179] In FIG. 10, an example in which transistors are used for the switches SW1 and SW2 is shown. It shows.

[0180] The switch SW1 has a gate connected to the wiring G1 and a source or drain connected to the wiring S 1, and the other of the source or drain is connected to one electrode of the capacitance element C1 and the liquid crystal element The other electrode of the capacitance element C1 is connected to the wiring CSCOM. The other electrode of the liquid crystal element 340 is connected to the wiring VCOM1.

[0181] The switch SW2 has a gate connected to the wiring G2 and a source or drain connected to the wiring S 2, and the other of the source or drain is connected to one electrode of the capacitance element C2, The other electrode of the capacitance element C2 is connected to the source of the transistor M. The transistor M is connected to one of the source and drain terminals and the wiring ANO. Alternatively, the other of the drains is connected to one of the electrodes of the light emitting element 360. The other electrode of the second electrode is connected to the wiring VCOM2.

[0182] In FIG. 10, transistor M has two gates that sandwich a semiconductor, and these are connected. This increases the current that the transistor M can pass. This can be done.

[0183] A signal that controls the switch SW1 to be in a conducting or non-conducting state is applied to the wiring G1. A predetermined potential can be applied to the wiring VCOM1. A signal for controlling the alignment state of the liquid crystal in the element 340 can be applied. M can be given a predetermined potential.

[0184] A signal that controls the switch SW2 to be in a conductive state or a non-conductive state is applied to the wiring G2. A potential difference that causes the light emitting element 360 to emit light is generated between the wiring VCOM2 and the wiring ANO. The wiring S2 can be connected to a potential that controls the conduction state of the transistor M. A signal to control the

[0185] In the pixel 230 shown in FIG. 10, when a reflective mode display is performed, for example, the wiring G1 and the wiring G2 are connected to the wiring G3. The liquid crystal element 340 is driven by a signal applied to the line S1 and displays the image by optical modulation. In addition, when displaying in a transmissive mode, the voltage applied to the wiring G2 and the wiring S2 is The light emitting element 360 can be driven by a signal to emit light for display. When driving with a mode, the voltages given to the wiring G1, the wiring G2, the wiring S1 and the wiring S2 are It can be driven by a signal.

[0186] In FIG. 10, one pixel 230 includes one liquid crystal element 340 and one light emitting element 360. 11A shows an example in which one pixel 230 has one The liquid crystal element 340 and four light-emitting elements 360 (light-emitting elements 360r, 360g, 360b, 360r) 11(A) shows an example in which the pixel 230 shown in FIG. 11(A) has a pixel width of 0w. A single pixel can display full color.

[0187] In FIG. 11A, in addition to the example of FIG. 10, a line G3 and a line S3 are connected to the pixel 230. are.

[0188] In the example shown in FIG. 11(A), for example, four light emitting elements 360 are provided, each of which is red (R), Light-emitting elements that exhibit green (G), blue (B), and white (W) colors can be used. A reflective liquid crystal element that exhibits white color can be used as the liquid crystal element 340. Therefore, when displaying in reflective mode, white color with high reflectance can be displayed. Furthermore, when displaying in transmissive mode, it is possible to achieve high color rendering with low power consumption. .

[0189] 11B shows an example of the configuration of the pixel 230. The pixel 230 has an electrode 311 The light emitting element 360w overlaps with the opening of the electrode 311, and the light emitting element 360w is disposed around the electrode 311. The light emitting element 360r, the light emitting element 360g, and the light emitting element 360b. The light emitting element 360g and the light emitting element 360b preferably have approximately the same light emitting area. .

[0190] [Example of cross-sectional structure] Next, an example of the cross-sectional structure of the display device 110 will be described with reference to FIGS. Here, the display area 111 will be described, but the display area 112 and the display area 113 can also have a similar configuration.

[0191] FIG. 12A shows a cross section of the input terminal 121, the circuit 233a, and the display area 111. The circuit 233a includes a transistor 4010, and the display area 111 includes a transistor 4020. 4010 to 4012. 012 is provided on the insulating layer 4102.

[0192] 12B is a cross-sectional view of the transistor 4010. The transistors 4010 and 4012 have the same configuration. 46, the electrode 244a, the electrode 244b, the electrode 223, the semiconductor layer 242, and the insulating layer 226 The electrode 223 is formed over the insulating layer 4102, and the insulating layer 4103 is formed over the electrode 223. The semiconductor layer 242 is formed on the insulating layer 4103, and an insulating film is formed on the semiconductor layer 242. An edge layer 226 is formed and an electrode 246 is formed on the insulating layer 226 .

[0193] The electrode 246, the insulating layer 226, and the semiconductor layer 242 are formed by insulating layer 4104 and insulating layer 4105. The electrode 244a and the electrode 244b are provided on the insulating layer 4105. The electrode 244a is formed through an opening provided in a part of the insulating layer 4104 and the insulating layer 4105. The electrode 244b is electrically connected to a part of the semiconductor layer 242. In the openings provided in the insulating layer 4104 and the other part of the insulating layer 4105, It is electrically connected to another part.

[0194] The electrode 246 and the semiconductor layer 242 have an overlapping region with the insulating layer 226 interposed therebetween. The electrode 223 and the semiconductor layer 242 have an overlapping region with the insulating layer 4103 interposed therebetween. Electrode 246 can function as a gate electrode. Electrode 223 can function as a back gate electrode. The electrode 244a can function as either a source electrode or a drain electrode. The insulating layer 226 can function as the other of the source electrode and the drain electrode. The transistor 4010 shown in FIGS. In the transistor 4012, a channel is formed in a region of the semiconductor layer 242 that overlaps with the electrode 246. The region where the channel of the semiconductor layer 242 is formed is called the "channel forming region." Also called.

[0195] Both the electrode 246 and the electrode 223 can function as gate electrodes. Both electrode 226 and insulating layer 4103 can function as gate insulating layers. One of the electrodes 46 and 223 is called the "gate" or "gate electrode," and the other is called the "back gate." The gate electrode may be referred to as a "first gate electrode" or a "back gate electrode." The first electrode may be referred to as the "electrode" and the other as the "second gate electrode."

[0196] By providing a gate electrode and a back gate electrode on either side of the semiconductor layer, the gate voltage By setting the electrode and back gate electrode at the same potential, the region where carriers flow in the semiconductor layer is As a result, the amount of carrier movement increases. Therefore, the on-current of the transistor is large relative to the area it occupies. That is, the transistor occupancy rate can be increased to meet the required on-current. The area can be reduced, and therefore a highly integrated semiconductor device can be realized. do.

[0197] In addition, since the gate electrode and back gate electrode are formed from a conductive layer, they can be The function of preventing the generated electric field from acting on the channel formation region (especially against static electricity, etc.) The back gate electrode is formed larger than the semiconductor layer, By covering the semiconductor layer with the gate electrode, the electric field shielding function can be improved.

[0198] In addition, the gate electrode and back gate electrode each have the function of shielding an external electric field. Therefore, the charges of charged particles generated outside the two layers affect the channel formation region of the semiconductor layer. As a result, stress tests (e.g., applying a negative charge to the gate) Degradation due to (Inus Gate Bias-Temperature) stress test In addition, the gate electrode and the back gate electrode are also suppressed by the electric field generated from the drain electrode. Therefore, the electric field can be blocked so that the drain voltage This can suppress the fluctuation of the on-state current rising voltage caused by the fluctuation of the on-state current. This effect is remarkable when a potential is applied to the gate electrode and the back gate electrode. occurs in.

[0199] The BT stress test is a type of accelerated test that measures the transients that occur during long-term use. It is possible to evaluate the characteristic changes (aging) of the stator in a short time. The amount of change in the threshold voltage of a transistor before and after the test is an important indicator for examining reliability. The smaller the fluctuation in threshold voltage, the more reliable the transistor is. .

[0200] Also, the semiconductor device has a gate electrode and a back gate electrode. By making the electrodes have the same potential, the amount of fluctuation in threshold voltage is reduced. At the same time, variations in electrical characteristics between transistors are reduced.

[0201] A transistor with a back gate electrode is called a +GBT, which applies a positive charge to the gate. The change in threshold voltage before and after the stress test was also observed for transistors without a back gate electrode. Smaller than Sta.

[0202] In addition, by forming the back gate electrode using a conductive film having a light-shielding property, This prevents light from entering the semiconductor layer from the side. This can prevent degradation of electrical characteristics such as a shift in the threshold voltage of the transistor. .

[0203] Depending on the purpose or application, the electrode 223 may not be provided.

[0204] In addition, the display device 110 shown in FIG. 12A includes a capacitor 4020a and a capacitor 402 The capacitor 4020a has a source electrode or a drain electrode of the transistor 4012. The electrode 4021 has a region where a part of one of the electrodes overlaps with the insulating layer 4103 interposed therebetween. The electrode 4021 is formed of the same conductive layer as the electrode 223. The transistor 4012 has a similar structure to the element 4020a. The transistor 4011 has a function of driving the liquid crystal element 340.

[0205] The transistor 4012 is electrically connected to the light-emitting element 360. An EL element is used as the element 360 .

[0206] An EL element has a layer containing a light-emitting compound between a pair of electrodes (also called an "EL layer"). When a potential difference greater than the threshold voltage of the EL element is generated between the pair of electrodes, Holes are injected from the anode side and electrons are injected from the cathode side. The injected electrons and holes are The electrons recombine in the layer, causing the light-emitting material contained in the EL layer to emit light.

[0207] EL elements are also classified according to whether the light-emitting material is an organic compound or an inorganic compound. Generally, the former is called an organic EL element, and the latter is called an inorganic EL element.

[0208] When a voltage is applied to an organic EL element, electrons are emitted from one electrode and holes are emitted from the other electrode. are injected into the EL layer, and then the carriers (electrons and holes) recombine. By this, the light-emitting organic compound forms an excited state, and the excited state returns to the ground state. Due to this mechanism, such a light-emitting element is called a current-excited light-emitting element. It is called a child.

[0209] In addition to the light-emitting compound, the EL layer may contain a material having a high hole injection property and a material having a high hole transport property. , hole blocking material, material with high electron transporting ability, material with high electron injecting ability, or bipolar The layer may contain a highly functional substance (a substance having high electron-transporting and hole-transporting properties).

[0210] The EL layer can be formed by a variety of methods, including vapor deposition (including vacuum deposition), transfer, printing, inkjet, and coating. It can be formed in any way.

[0211] Inorganic EL elements are divided into dispersion-type inorganic EL elements and thin-film-type inorganic EL elements depending on the element structure. Dispersion-type inorganic EL elements have a light-emitting layer in which particles of light-emitting material are dispersed in a binder. The emission mechanism is a donor-acceptor interaction that utilizes the donor and acceptor levels. Thin-film inorganic EL devices sandwich the light-emitting layer between dielectric layers. Furthermore, this structure is sandwiched between electrodes, and the light emission mechanism utilizes the inner-shell electron transition of metal ions. In this example, the light emitting element is an organic EL element. do.

[0212] If at least one of the pair of electrodes is transparent in order to extract the light emitted from the light emitting element, Then, a transistor and a light-emitting element are formed on the substrate, and the light-emitting element is formed on the opposite side of the substrate. Top emission structure that extracts light, or light that is extracted from the substrate side Bottom emission structure and dual emission structure that emits light from both sides There are light emitting elements with a mission structure, and light emitting elements with any emission structure can also be applied.

[0213] The light emitting element 360 has a laminated structure of an electrode 4030, a light emitting layer 4511, and an electrode 4031. However, the present invention is not limited to this structure. Therefore, the configuration of the light emitting element 360 can be changed as appropriate.

[0214] The partition wall 4510 is formed using an organic insulating material or an inorganic insulating material, particularly a photosensitive resin. An opening is formed on the electrode 4030 using a material, and the side of the opening has a continuous curvature. It is preferable to form the inclined surface so that the inclined surface is formed by the inclined surface.

[0215] The light-emitting layer 4511 may be composed of a single layer or a plurality of layers stacked. Either way is fine.

[0216] The electrodes 4031 and 4032 are provided to prevent oxygen, hydrogen, moisture, carbon dioxide, etc. from entering the light emitting element 360. A protective layer may be formed on the partition wall 4510. The protective layer may be formed of silicon nitride, silicon oxide, or the like. Silicon oxide, aluminum oxide, aluminum nitride, aluminum oxynitride, aluminum nitride oxide It can form aluminum, DLC (Diamond Like Carbon), etc. In addition, a filler material is placed in the space sealed by the substrate 4006 and the sealant 4005. 4514 is provided and sealed. In this way, it is highly airtight so as not to be exposed to the outside air. Protective films with little degassing (lamination films, UV-curable resin films, etc.) It is preferable to package (enclose) it in a bar material.

[0217] Filler 4514 can be an inert gas such as nitrogen or argon, or an ultraviolet curing resin or Thermosetting resins can be used, such as PVC (polyvinyl chloride), acrylic resin, Imide, epoxy resin, silicone resin, PVB (polyvinyl butyral) or EVA (ethylene vinyl acetate) or the like can be used. Agents may also be included.

[0218] The sealing material 4005 is made of glass materials such as glass frit, or ordinary materials such as two-component mixed resin. Resin materials such as heat-curable resin, photo-curable resin, and thermosetting resin can be used. The sealing material 4005 may also contain a desiccant.

[0219] In addition, by using a microcavity structure for the light-emitting element, it is possible to extract light with high color purity. In addition, by combining a microcavity structure with a color filter, This reduces congestion and improves the visibility of the displayed image.

[0220] An electrode 4030 for applying a voltage to the display element and an electrode 4031 ("pixel electrode layer", "common electrode layer") The electrode layer, or the counter electrode layer, The transparency or reflectivity can be selected depending on the location where the layer is provided and the pattern structure of the electrode layer. stomach.

[0221] For example, the electrodes 4030 and 4031 may be made of indium oxide containing tungsten oxide. Indium zinc oxide containing tungsten oxide, Indium oxide containing titanium oxide , indium tin oxide, indium tin oxide containing titanium oxide, indium zinc oxide, Use a transparent conductive material such as indium tin oxide doped with silicon oxide. can be done.

[0222] For example, the electrodes 4030 and 4031 may be made of tungsten (W), molybdenum ( Mo), zirconium (Zr), hafnium (Hf), vanadium (V), niobium (Nb ), Tantalum (Ta), Palladium (Pd), Chromium (Cr), Cobalt (Co), Ni Ni, titanium (Ti), platinum (Pt), aluminum (Al), copper (Cu), silver (Ag) or its alloys, or metal nitrides. It can be achieved.

[0223] For example, the electrode 4030 and the electrode 4031 may be made of a conductive polymer ("conductive polymer"). The conductive polymer can be formed by using a conductive composition containing a conductive polymer. For example, a so-called π-electron conjugated conductive polymer can be used. polypyrrole or its derivatives, polythiophene or its derivatives derivatives, or copolymers or copolymers of two or more of aniline, pyrrole and thiophene Examples include hydroxybenzoates and their derivatives.

[0224] When the light emitting element 360 has a top emission structure, the electrode 4030 is made of a material with high light reflectivity. The conductive material is formed using a conductive material such as Al or Ag. In addition, conductive materials with high light reflectivity and conductive materials with light transparency can be used. The electrode 4031 may be formed of a light-transmitting conductive material. stomach.

[0225] In addition, when the light emitting element 360 has a bottom emission structure, the electrode 4030 is and the electrode 4031 is formed of a conductive material having high light reflectivity. good.

[0226] In addition, when the light emitting element 360 has a dual emission structure, the electrode 4030 and the electrode 404 The insulating film 031 may be formed of a light-transmitting conductive material.

[0227] In this embodiment, the light emitting element 360 has a bottom emission structure.

[0228] 12A, the display device 110 has an electrode 311 and an insulating layer 4102 below it. layer 4101, an electrode 4131, an alignment film 4032, a liquid crystal layer 4008, an alignment film 4033, a spacer 4035, electrode 4132, overcoat layer 4133, colored layer 4134, substrate 4001 , a light-shielding layer 4135, and a polarizing plate 4136.

[0229] In the display device 110 shown in FIG. 12A, the electrode 4015 is formed between the insulating layer 4101 and the insulating An opening formed in layer 4102 electrically connects to electrode 4014. 14 is formed at the same time as the electrode 4022 in the same process.

[0230] The liquid crystal element 340 includes an electrode 4131, an electrode 4132, and a liquid crystal layer 4008. An alignment film 4032 and an alignment film 4033 are provided to sandwich the liquid crystal layer 4008. The electrode 4131 and the electrode 4132 overlap each other with the liquid crystal layer 4008 interposed therebetween. The electrode 4131 has an area overlapping with the electrode 311. The electrode 4131 also overlaps with the electrodes 4022 and and electrically connected to one of the source and drain of the transistor 4011 via the electrode 311. The electrode 311 has a function of reflecting visible light. It can be formed simultaneously in the same process as 1.

[0231] The spacers 4035 are columnar spacers obtained by selectively etching the insulating layer. and is provided to control the distance (cell gap) between the electrode 4131 and the electrode 4132. The spacers 4035 may be spherical.

[0232] The display device 110 shown in FIG. 12(A) is a light-emitting display device with a bottom emission structure. The light 45 generated by the light emitting element 360 is incident on the LCD panel 100 and functions as a reflection type liquid crystal display device. The light 4521 incident from the substrate 4001 side is emitted from the substrate 4001 side. The light 4521 is reflected by the electrode 311 and emitted from the substrate 4001 side. When passing through the layer 4134, a specific wavelength range is absorbed, and light 4521 has a different wavelength range. However, the wavelength range of the incident light 4521 is the wavelength range of the colored layer 4134 that is transmitted. If the wavelength range of light 4522 is inside the wavelength range of light 4521, the wavelength range of light 4522 is almost the same as that of light 4521.

[0233] The light 4520 may be white light or light having a specific wavelength range. The light 4520 may be light having a wavelength range such as red, green, or blue. When transmitting light through 4, certain wavelength ranges may be absorbed.

[0234] The display device 110 shown in FIG. 12(A) can be operated in three display modes. The first mode is a display mode in which an image is displayed as a reflective liquid crystal display device. The first mode is a display mode in which the display device displays an image as a light-emitting display device. This is a display mode in which the first mode and the second mode are simultaneously activated.

[0235] The first mode does not require a light source, and is therefore a display mode with extremely low power consumption. For example, This is effective when the illuminance of the external light is sufficiently high and the external light is white light or light close to that. The first mode is a display mode suitable for displaying text information such as books and documents. In addition, because it uses reflected light, it is possible to provide a display that is easy on the eyes and reduces eye fatigue. This has the effect of:

[0236] The second mode is extremely vivid (high contrast and This display mode allows for high-quality display with excellent color reproduction. This is effective when the illuminance of external light is extremely low, such as when the illuminance of external light is low. A bright display can be dazzling to the user. It is preferable to display with reduced brightness in this mode. The second mode provides a clearer image and smoother playback. This mode is suitable for displaying videos, etc.

[0237] The third mode uses both the reflected light from the first mode and the emitted light from the second mode. Specifically, the reflected light in the first mode and the reflected light in the second mode are The first mode is driven to express one color by mixing the light emitted by the other modes. It can display more vividly than the first mode while consuming less power than the second mode. For example, when the illuminance of external light is relatively low, such as under indoor lighting or in the morning or evening hours, or when the external light This is effective when the chromaticity is not white. Also, it uses a mixture of reflected light and emitted light. This makes it possible to display images that make you feel as if you are looking at a painting. .

[0238] As shown in FIG. 13, the electrode 4015 and the FPC 4042 (FPC: Flexible The anisotropic conductive layer 4041 is electrically connected to the substrate 402. That's fine.

[0239] 14, a touch sensor 4137 is provided on the display area of ​​the display device 110. may be provided.

[0240] [substrate] There is no particular limitation on the materials used for the substrate 4001 and the substrate 4006. The material should be selected taking into consideration the presence or absence of burrs and the heat resistance required to withstand heat treatment. Glass substrates such as aluminoborosilicate glass and aluminoborosilicate glass, ceramic substrates, A quartz substrate, a sapphire substrate, or the like can be used. 006: semiconductor substrates, flexible substrates, laminated films, substrates A material film or the like may also be used.

[0241] The semiconductor substrate may be a single semiconductor made of silicon or germanium, for example. Conductor substrate, or silicon carbide, silicon germanium, gallium arsenide, indium phosphide Compound semiconductor substrates made of silicon, zinc oxide, or gallium oxide are also available. The semiconductor substrate may be a single-crystal semiconductor or a polycrystalline semiconductor.

[0242] Examples of materials for flexible substrates, laminating films, and base films include polyethylene. polyethylene terephthalate (PET), polyethylene naphthalate (PEN), polyether Polypropylene (PES), Polytetrafluoroethylene (PTFE), Polypropylene, Poly Ester, polyvinyl fluoride, polyvinyl chloride, polyolefin, polyamide (nylon , aramid, etc.), polyimide, polycarbonate, aramid, epoxy resin, acrylic Resins and the like can be used.

[0243] By using such a material as the substrate, a lightweight display device can be provided. In addition, by using such a material as the substrate, a display device resistant to impact can be provided. In addition, by using such a material as the substrate, a display device that is difficult to break can be provided. In addition, by using such a material as the substrate, a display device that is difficult to break can be provided

[0244] The flexible substrates used for the substrate 4001 and the substrate 4006 are preferably those with a lower linear expansion coefficient so that deformation due to the environment is suppressed. The flexible substrates used for the substrate 4001 and the substrate 4006 are, for example, made of a material with a linear expansion coefficient of 1×10 / K or less, 5×10 -3 / K or less, or 1×10 -5 / K or less. In particular, aramid is suitable as a flexible substrate -5 / because of its low linear expansion coefficient.

[0245] [Insulating layer] Insulating layers such as the insulating layer 4101, the insulating layer 4102, the insulating layer 4103, the insulating layer 4104, the insulating layer 4105, and the insulating layer 226 are made of a material selected from aluminum nitride, aluminum oxide, aluminum oxynitride, aluminum nitride oxide, magnesium oxide, silicon nitride, silicon oxide, silicon oxynitride, silicon nitride oxide, gallium oxide, germanium oxide, yttrium oxide, zirconium oxide, lanthanum oxide, neodymium oxide, hafnium oxide, tantalum oxide, aluminum silicate, etc., and are used either singly or in a laminated form. Also, among oxide materials, nitride materials, oxynitride materials, and nitride oxide materials, a material in which a plurality of materials are mixed may be used.

[0246] ​In this specification, the term "nitride oxide" refers to a compound containing more nitrogen than oxygen. Also, oxynitrides refer to compounds that contain more oxygen than nitrogen. The content of Measurements can be made using techniques such as kScattering Spectrometry. .

[0247] In particular, the insulating layers 4102 and 4104 are made of insulating materials that are difficult for impurities to penetrate. For example, boron, carbon, nitrogen, oxygen, fluorine, magnesium, Aluminum, silicon, phosphorus, chlorine, argon, gallium, germanium, yttrium an insulating material containing aluminum, zirconium, lanthanum, neodymium, hafnium or tantalum, It may be used as a single layer or a laminated layer. For example, as an insulating material that is difficult for impurities to permeate, Aluminum oxide, aluminum nitride, aluminum oxynitride, aluminum nitride oxide, Gallium oxide, germanium oxide, yttrium oxide, zirconium oxide, lanthanum oxide Examples of the oxide include neodymium oxide, hafnium oxide, tantalum oxide, and silicon nitride. In addition, the insulating layer 4102 or the insulating layer 4104 may be formed of indium tin oxide, which has high insulating properties. Zinc (In-Sn-Zn oxide) or the like may also be used.

[0248] By using an insulating material that is difficult for impurities to penetrate for the insulating layer 4102, The insulating layer 410 can suppress the diffusion of impurities from the insulating layer 410, thereby improving the reliability of the transistor. By using an insulating material that is difficult for impurities to penetrate into the insulating layer 4105, This can suppress diffusion and improve the reliability of the transistor.

[0249] The insulating layer 4112 has a flat surface. In addition to the above insulating materials, polyimide, acrylic resin, benzocyclobutene resin, poly Heat-resistant organic materials such as ethylenediamine, propylene glycol, and epoxy resins can be used. In addition to the above organic materials, low-k materials, siloxane resins, and PSG (phosphor silicon dioxide) are also available. Glass), BPSG (borophosphorus glass), etc. can be used. A plurality of insulating layers formed by the above method may be stacked.

[0250] The siloxane resin is a Si—O— compound formed using a siloxane material as a starting material. It corresponds to a resin containing Si bonds. Siloxane resins contain organic groups (e.g., alkane) as substituents. Alternatively, an alkyl group or an aryl group, or a fluoro group may be used. It's okay to be there.

[0251] In addition, CMP treatment may be performed on the surface of the insulating layer, etc. By performing CMP treatment, This reduces the unevenness of the sample surface and improves the coverage of the insulating and conductive layers that will be formed later. do.

[0252] [Conductive layer] Electrode 4031, Electrode 4030, Electrode 4022, Electrode 4021, Electrode 4014, Electrode 311 , electrode 223, electrode 244a, electrode 244b, electrode 4131, and electrode 4132, etc. Materials for forming the conductive layer include aluminum, chromium, copper, silver, gold, platinum, and titanium. Ta, nickel, titanium, molybdenum, tungsten, hafnium, vanadium, niobium One metal element selected from manganese, magnesium, zirconium, beryllium, etc. Materials containing the above can be used. Polycrystalline silicon containing impurity elements such as phosphorus can also be used. Semiconductors with high electrical conductivity, such as silicon dioxide, may also be used. Alternatively, a nitride semiconductor or a nitride semiconductor having high electrical conductivity may be used. Silicides such as those mentioned above may also be used. It may be used.

[0253] In addition, indium tin oxide (ITO) is used as the conductive material for forming the conductive layer. Indium oxide containing tungsten oxide, tungsten oxide Indium zinc oxide containing titanium oxide, Indium oxide containing titanium oxide Indium tin oxide, indium zinc oxide, silicon-doped indium tin oxide, etc. Conductive materials containing oxygen, titanium nitride, tantalum nitride, and other conductive materials containing nitrogen are suitable. In addition, a material containing the above-mentioned metal element and a conductive material containing oxygen can be combined. It is also possible to use a laminated structure in which the above-mentioned material containing a metal element and nitrogen are combined. It is also possible to use a laminated structure in which a conductive material containing the above-mentioned metal element is combined. a laminated structure combining a material containing oxygen, a conductive material containing nitrogen, and a conductive material containing oxygen; It can also be done as follows.

[0254] In the display device 110 shown in FIG. 12A, the electrode 311 is made of a conductive material with high light reflectivity. The electrode 4030, the electrode 4131, and the electrode 4132 are made of a light-transmitting conductive material. Form.

[0255] [Semiconductor layer] The semiconductor layer 242 may be formed using an amorphous semiconductor, a microcrystalline semiconductor, a polycrystalline semiconductor, or the like. For example, amorphous silicon or microcrystalline germanium can be used. In addition, silicon carbide, gallium arsenide, oxide semiconductors (a type of metal oxide), and nitride semiconductors Compound semiconductors such as those mentioned above, organic semiconductors, etc. can be used.

[0256] In particular, it is preferable to use an oxide semiconductor, which is a type of metal oxide, as the semiconductor layer 242. Since the band gap of an oxide semiconductor is 2 eV or more, the semiconductor layer 242 is formed of an oxide semiconductor. By using such a material, a transistor with extremely low off-state current can be realized. The retention time of electrical signals such as image signals can be extended, and the writing interval is Therefore, the frequency of refresh operations can be reduced, resulting in reduced power consumption. This has the effect of reducing power consumption.

[0257] In addition, a transistor using an oxide semiconductor, which is a type of metal oxide, in the semiconductor layer where the channel is formed is also used. An OS transistor (also called an OS transistor) has a high dielectric strength between the source and drain. Therefore, a highly reliable transistor can be provided. Furthermore, a highly reliable semiconductor device can be provided. This makes it possible to provide a semiconductor device with a large output voltage and high breakdown voltage.

[0258] In addition, OS transistors have relatively high field-effect mobility, enabling high-speed operation. Therefore, by using an OS transistor in the pixel portion of a display device, it is possible to display high-quality images. In addition, by using an OS transistor, it is possible to provide a driver circuit on the same substrate. This allows the display unit and pixel unit to be manufactured separately, reducing the number of parts in the display device. It is possible.

[0259] In general, the capacitance of a capacitor provided in a display device is determined by the capacitance of the resistor of a transistor arranged in a pixel portion. The capacitance is set to be able to hold charge for a predetermined period, taking into consideration the current flowing through the capacitor. The capacitance may be set in consideration of the off-state current of the transistor and the like.

[0260] For example, by using an OS transistor in a pixel portion of a display device, the capacitance of a capacitor can be reduced. Furthermore, by using an OS transistor in a pixel portion of a display device, The formation of the capacitive element may be omitted.

[0261] [Overcoat layer] The overcoat layer 4133 may be made of, for example, acrylic resin, epoxy resin, polyimide, etc. By forming the overcoat layer 4133, an organic insulating layer such as For example, impurities contained in the colored layer 4134 are diffused into transistors, display elements, etc. However, the overcoat layer 4133 is not necessarily provided. It is not necessary, and a structure in which the overcoat layer 4133 is not formed may be used.

[0262] [Colored layer] Materials that can be used for the coloring layer include metal materials, resin materials, pigments, and dyes. Examples of such materials include resin materials.

[0263] [Light blocking layer] Materials that can be used for the light-shielding layer include carbon black, titanium black, gold, Examples of the light-shielding layer include metals, metal oxides, and composite oxides including solid solutions of multiple metal oxides. The film may be a film containing a resin material, or may be a thin film made of an inorganic material such as a metal. For example, a laminated film of a film containing a material of a colored layer may be used as the light-shielding layer. A film containing a material used for a color layer that transmits light of a certain color and a material used for a color layer that transmits light of another color are used. By using the same material for the colored layer and the light-shielding layer, This is preferable because it allows the equipment to be standardized and the process to be simplified.

[0264] [Film formation method] The insulating layer, the conductive layer for forming electrodes and wiring, and the semiconductor layer are formed by sputtering. , spin coating method, CVD (Chemical Vapor Deposition) method (Thermal CVD method, MOCVD (Metal Organic Chemical Vapo r Deposition) method, PECVD (Plasma Enhanced CVD) ) method, high density plasma CVD method, LPCVD method (low pressure CVD), APCVD method (atmosphere ric pressure CVD), ALD (Atomic Layer Deposition) Deposition) method or MBE (Molecular Beam Epitaxial axy) method or PLD (Pulsed Laser Deposition) method, Dip method, spray coating method, droplet ejection method (inkjet method, etc.), printing method (screen The printing method can be used for forming the pattern.

[0265] The plasma CVD method can produce high-quality films at relatively low temperatures. When a film formation method that does not use plasma, such as a thermal CVD method, is used, damage to the surface to be formed is generated. For example, wiring, electrodes, and elements (transistors, Capacitor elements, etc., may become charged up by receiving electric charge from the plasma. At this time, the accumulated charge can damage the wiring, electrodes, elements, etc. contained in the semiconductor device. On the other hand, in the case of a film formation method that does not use plasma, such plasma damage can occur. Since no image is generated, the yield of the semiconductor device can be increased. Since no plasma damage occurs, films with few defects can be obtained.

[0266] The CVD and ALD methods are film formation methods in which particles emitted from a target are deposited. Unlike the conventional method, this is a film formation method in which a film is formed by a reaction on the surface of the object to be treated. This is a film forming method that is less affected by the shape of the workpiece and has good step coverage. The ALD method has excellent step coverage and thickness uniformity, making it suitable for the production of thin films with high aspect ratios. It is suitable for coating the surface of high openings. However, the ALD method has a relatively low film formation rate. Because the deposition rate is slow, it cannot be used in combination with other deposition methods such as CVD, which has a high deposition rate. In some cases, this is preferable.

[0267] In the CVD and ALD methods, the composition of the resulting film can be controlled by the flow rate ratio of the source gases. For example, in the CVD and ALD methods, the flow rate ratio of the source gases can be adjusted to any desired value. In addition, for example, in the CVD method and the ALD method, it is possible to form a film having a composition. By changing the flow rate ratio of the source gases while When forming a film while changing the flow rate ratio of the source gases, multiple film forming chambers can be used. Compared to forming a film by hand, the time required for film formation is shortened by the time required for transport and pressure adjustment. Therefore, the productivity of the semiconductor device can be increased in some cases.

[0268] When forming a film by the ALD method, a gas containing no chlorine should be used as the source gas. is preferred.

[0269] In addition, when forming a metal oxide layer by sputtering, the thickness of the metal oxide layer in the sputtering device is The chamber is cryo-treated to remove as much water as possible, which is an impurity for the metal oxide layer. A high vacuum (5 x 10) was created using a vacuum pump of the adsorption type. -7 Pa to 1 x 10 -4 It is preferable to evacuate the air to a pressure of about 100 Pa. The gas molecules equivalent to H2O (gas molecules equivalent to m / z = 18) in the chamber Divide the pressure by 1×10 -4 Pa or less, preferably 5 x 10 -5 It is preferable that the viscosity is set to 0.5 Pa or less. The film temperature is preferably RT or higher and 500°C or lower, more preferably RT or higher and 300°C or lower, and RT More preferably, the temperature is 200°C or higher.

[0270] In addition, the sputtering gas must be highly purified. The oxygen gas or argon gas used has a dew point of -40°C or less, preferably -80°C or less, more preferably Preferably, a gas purified to a temperature of -100°C or less, more preferably -120°C or less, is used. By doing so, it is possible to prevent moisture and the like from being taken into the metal oxide layer as much as possible.

[0271] In addition, when forming an insulating layer, a conductive layer, a semiconductor layer, or the like by sputtering, oxygen is By using a sputtering gas containing oxygen, it is possible to supply oxygen to the layer to be formed. The more oxygen contained in the tartering gas, the more oxygen is likely to be supplied to the layer to be formed. .

[0272] <Variation 1> As a modification of the display device 110, a cross-sectional view of a display device 110a is shown in FIG. To avoid repetition, differences from display device 110 will be mainly described.

[0273] The display device 110a has a colored layer 4134e in the area overlapping the light-emitting element 360. In the example, the colored layer 4134e is provided between the insulating layer 4105 and the insulating layer 4112. The colored layer 4134e may be provided on any layer. In addition, the colored layer 4134e may be provided in multiple layers. good.

[0274] In addition, in the display device 110a, a colored layer 4134 is provided in the area overlapping with the light emitting element 360. not present.

[0275] In the display device 110 shown in FIG. 12A, light 4520 emitted from the light-emitting element 360 is The light 4521 incident on the liquid crystal element 340 passes through the color layer 4134 only once. After passing through 4134, it is reflected by the electrode 311 and passes through the colored layer 4134 again. That is, light 4520 emitted by the light emitting element 360 and light 4521 reflected by the liquid crystal element 340 are The number of times each passes through the colored layer is different. Therefore, both the transmissive mode and the reflective mode can be displayed. It's difficult to improve the quality.

[0276] In the display device 110a, the colored layer 4134e functions as a colored layer for the light-emitting element 360. In addition, in the display device 110a, the colored layer 4134 functions as a colored layer for the liquid crystal element 340. To make.

[0277] Therefore, the colored layer 4134e can be designed as an optimal colored layer for the light-emitting element 360. This improves the color reproducibility in the transmission mode. 134 can be designed as a colored layer that is optimal for the liquid crystal element 340. The color reproducibility in the colored layer 4134 and the colored layer 4134e can be improved. By providing the above, the display quality of the display device can be improved.

[0278] In addition, the colored layer 4134 is provided in the area overlapping the light emitting element 360 so as to overlap the colored layer 4134e. That's fine.

[0279] Furthermore, as shown in FIG. 16, the colored layer 4134 is not provided in the area overlapping with the light emitting element 360. For example, a light emitting element 360 that emits red light, a light emitting element 360 that emits green light, or By using a light emitting element 360 that emits blue light, the colored layer 4134 can be omitted. can.

[0280] <Variation 2> As a modification of the display device 110, a cross-sectional view of a display device 110b is shown in FIG. In order to avoid repetition of the explanation, differences from the display device 110 will be mainly described.

[0281] In Figures 12(A) and (B), a top-gate structure transistor is applied to the display device. However, the structure of a transistor used in a display device of one embodiment of the present invention is not particularly For example, a planar type transistor or a staggered type transistor may be used. The transistor may be a top gate type or an inverted staggered type. Alternatively, a bottom gate type transistor structure may be used. A combination of these may also be used.

[0282] The display device 110 shown in FIG. 12A includes a top-gate transistor 4010, a transistor The display device shown in FIG. The device 110b includes a top-gate transistor 4010, a transistor 4011, and Instead of the transistor 4012, a bottom gate transistor 4010a, The second input terminal 4011a has a first input terminal 4012b, and the second input terminal 4013 has a second input terminal 4014a.

[0283] FIG. 17B is a cross-sectional view of the transistor 4010a. The transistors 4010a to 4012a have similar structures. , electrode 246, electrode 244a, electrode 244b, electrode 223, and semiconductor layer 242. The electrode 223 is formed on the insulating layer 4102, and the insulating layer 4103 is formed on the electrode 223. The semiconductor layer 242 is formed on the insulating layer 4103. The electrode 244a and the electrode The electrode 244b is formed on the semiconductor layer 242 and the insulating layer 4103. The electrode 244b has a region in contact with a part of the semiconductor layer 242. On the semiconductor layer 242, the electrode 244a, and the electrode 244b, An insulating layer 4105 is formed. An electrode 246 is formed on the insulating layer 4105. In addition, an insulating layer 4104 is formed over the insulating layer 4105 and the electrode 246 .

[0284] The electrode 223 and the semiconductor layer 242 have an overlapping region with the insulating layer 4103 interposed therebetween. The electrode 246 and the semiconductor layer 242 have an overlapping region with the insulating layer 4105 interposed therebetween. As previously mentioned, both electrode 246 and electrode 223 can function as gate electrodes. Therefore, both the insulating layer 4103 and the insulating layer 4105 can function as gate insulating layers. do.

[0285] In addition, bottom-gate transistors 4010a to 4010b shown in FIGS. In the transistor 4012a, the electrode 223 overlaps the electrode 244 when viewed in a plan view. The region in the semiconductor layer 242 sandwiched between the electrode 244a and the electrode 244b functions as a channel forming region. do.

[0286] The electrode 246 may be provided on the insulating layer 4104. In this case, the electrode 246 may not be provided.

[0287] This embodiment mode can be implemented by being appropriately combined with the configurations described in other embodiments. is.

[0288] (Embodiment 3) In this embodiment, a modified example of the display device 110 will be described with reference to the drawings. Similarly to the display device 110, the display device 50 also has a display area 111, a display area 112, a display area 113, a bending The curved region 114 and the bent region 115 are included. In this embodiment, differences from the display device 110 will be mainly described. 19 is a plan view of a display device 150 which is a modification of the display device 10. FIG. 1 is a block diagram illustrating the above.

[0289] The display device 150 differs from the display device 110 in that it does not have the input terminal 122 or the input terminal 123. In addition, the display device 150 has meandering patterns in the bending region 114 and the bending region 115. The wiring 245 provided in the bending region 114 is connected to the display region 111. For example, the wiring 235 in the display area 111 and the wiring 235 in the display area 112 are electrically connected. The wiring 235 in the bending region 115 is electrically connected via the wiring 245. The wiring 245 provided in the display area 111 electrically connects the display area 113 to the display area 111. For example, the wiring 235 in the display area 111 and the wiring 235 in the display area 113 are connected to each other. Electrical connection is made via the

[0290] The display area 111, the display area 112, and the display area 113 are electrically connected by wiring 245. By doing so, the display area 111, the display area 112, and the display area 113 are combined into one display area. Therefore, the circuit 232a, the circuit 232b, and the circuit 2 32c, for example, only the circuit 232b is used to display the display area 111, the display area 112, and and the display area 113. In addition, the circuit 233a, the circuit 233b, and For example, only the circuit 233a of the circuits 233c is used to display the display area 111 and the display area 11 2, and the display area 113 can be driven.

[0291] In this way, the wiring 245 is used to connect the display area 111 and the display area 112, and the display area 113. By electrically connecting the display area 111 and the display area 113, the configuration of the drive circuit section is This simplifies the circuit configuration and reduces the area occupied by the driver circuit. For example, in the display device 150, the input terminal 122 and the and input terminal 123 are reduced.

[0292] FIG. 20 shows a perspective view of the display device 150 bent at the bending region 114 and the bending region 115. The wiring 245 provided in the bending region 114 and the bending region 115 is formed in a meandering shape. This makes it difficult for breakage due to bending to occur. This prevents malfunctions and a decrease in reliability. However, malfunctions and reliability of the display device 150 caused by short circuits or breaks in the wiring or electrodes may occur. Specifically, the radius of curvature R can be set to 1 mm or less. Alternatively, the radius of curvature R can be set to 0.5 mm or less. Alternatively, the radius of curvature R can be set to 0.1 It can be made to be less than mm.

[0293] The wiring 245 can be formed in various shapes. For example, the wiring 245 can be formed in a triangular wave shape. The wiring 245 may be made to meander like a sine wave (see FIG. 21(A)). The wiring 245 may be made to meander (see FIG. 21(B)). Also, the wiring 245 may be made to meander in an arc shape. (See FIG. 21(C)). The wiring 245 may also be made to meander with a combination of straight lines ( See FIG. 21(D). The wiring 245 may be made to meander by combining straight and curved lines. (See FIG. 21(E)). Also, as shown in FIG. 21(F) or FIG. 21(G), the wiring 245 may be in a chain form.

[0294] This embodiment mode can be implemented by being appropriately combined with the configurations described in other embodiments. is.

[0295] (Fourth embodiment) In this embodiment, a display device 110a, which is a modification of the display device 110, and a display device 150 A display device 150a which is a modified example, and a display device 150 which is a modified example of the display device 150a b will be explained using the drawings.

[0296] [Display device 110a, display device 150a] First, the display device 110a and the display device 150a will be described. 24 is a plan view of a display device 110a, which is a modified example of the display device 110. 1 is a plan view of a display device 150a which is a modified example of the display device 150. The display device 150a, like the display device 110 and the display device 150, also has a display area 111, a display The display area 112, the display area 113, the bending area 114, and the bending area 115. To avoid repetition, differences from display device 110 and / or display device 150 will be discussed. This will mainly explain about:

[0297] The display device 110a and the display device 150a have meandering wiring 235 in the display area 113. Similarly to the display area 113, the display area 112 also has meandering wiring 235. The wiring 235 of the display area 112 and the display area 113 is connected to the wiring 24. 5, by forming the display area 112 and the display area 113 in a meandering or chain shape, Even if the wiring 235 is curved or bent, breakage of the wiring 235 is unlikely to occur. This can prevent malfunctions and reduced reliability caused by short circuits or broken wires.

[0298] In addition to the wiring 235, other wirings may also be meander-shaped or chain-shaped. For example, As in a display device 110a shown in FIG. 23, the wiring 236 may be a meandering wiring.

[0299] FIG. 26(A) shows a display device 150a in which the display area 112 and the display area 113 are curved. The display device 110a can also be formed in the same shape as that shown in FIG. can.

[0300] [Display device 150b] Next, the display device 150b will be described. Figure 25 shows a modified example of the display device 150a. It should be noted that in order to avoid repetition of the description, only the display device 150a is shown. This section will mainly explain the differences between the two.

[0301] The display device 150b is different from the display device 15 in that it does not have the bending region 114 and the bending region 115. Therefore, the display device 150b does not have the wiring 245. In the device 150b, the wiring 235 of the display area 111 and the wiring 235 of the display area 112 are The display device 150b is connected without going through the wiring 23 of the display area 111. 5 and the wiring 235 of the display area 113 are connected without the wiring 245 therebetween.

[0302] The display device 150b does not have the bending region 114 and the bending region 115, so the display region 111 , display area 112, and display area 113 are visually recognized as one continuous display area. Therefore, it is possible to display an image without a break from the display area 111 to the display area 113. can.

[0303] FIG. 26(B) shows a display device 150b in which the display area 112 and the display area 113 are curved. 1 shows a perspective view of the state.

[0304] [Display device 150c] Next, the display device 150c will be described. Figure 27 shows a modified example of the display device 150b. It is to be noted that in order to avoid repetition of the description, the display device 150b is This section will mainly explain the differences between the two.

[0305] As in the display device 150c, the wiring 235 in the display area 111 is also in a meandering or chain shape. The wiring 235 of the display areas 111 to 113 may be formed in a meandering or chain shape. As a result, even if the display areas 111 to 113 are curved or bent, the wiring 23 Therefore, malfunctions and reliability problems caused by short circuits and disconnections are less likely to occur. This can prevent a decline.

[0306] 28(A) and 28(B) show the display area 111 to the display area 112 of the display device 150c. 13 is shown in a bent state.

[0307] This embodiment mode can be implemented by being appropriately combined with the configurations described in other embodiments. is.

[0308] (Embodiment 5) In this embodiment, the light emitting element 330 and the light emitting element 360 can be used. The following describes a configuration example of the EL layer 331. This corresponds to the light-emitting layer 4511 shown in the form of FIG.

[0309] <Configuration of light-emitting element> The light-emitting element 330 shown in FIG. 29(A) has an EL element between a pair of electrodes (electrode 318 and electrode 322). In the following description of this embodiment, the layer 320 is taken as an example. Electrode 318 is used as an anode and electrode 322 is used as a cathode.

[0310] The EL layer 320 may be formed to include at least a light-emitting layer. It may be a laminated structure including a functional layer. As functional layers other than the light-emitting layer, a substance with high hole injection property, a substance with high hole transport property, a substance with high electron transport property, a substance with high electron injection property, a bipor lar (a substance with high transport property of both electrons and holes) substance, etc. can be used. Specifically, functional layers such as a hole injection layer, a hole transport layer, an electron transport layer, and an electron injection layer can be appropriately combined and used.

[0311] In the light-emitting device 330 shown in Fig. 29(A), current flows due to the potential difference applied between the electrode 318 and the electrode 322, and holes and electrons recombine in the EL layer 320 to emit light. That is, it is configured such that a light-emitting region is formed in the EL layer 320.

[0312] In the present invention, the light emitted from the light-emitting device 330 is taken out to the outside from the side of the electrode 318 or the electrode 322. Therefore, either one of the electrode 318 or the electrode 322 is made of a translucent substance.

[0313] Note that the EL layer 320 may be laminated in multiple layers between the electrode 318 and the electrode 3 22 as in the light-emitting device 331 shown in Fig. 29(B). When it has a laminated structure of n layers (n is a natural number of 2 or more), it is preferable to provide a charge generation layer 320a between the m-th (m is a natural number satisfying 1 ≤ m < n) EL layer 320 and the (m + 1) -th EL layer 320.

[0314] The charge generation layer 320a can be formed by appropriately combining a composite material of an organic compound and a metal oxide, a metal oxide, a composite material of an organic compound and an alkali metal, an alkaline earth metal, or a compound thereof, in addition to these. As the composite material of an organic compound and a metal oxide, for example, ​​​​​​For example, organic compounds and metal oxides such as vanadium oxide, molybdenum oxide, and tungsten oxide. The organic compounds include aromatic amine compounds, carbazole derivatives, aromatic hydrocarbons, etc. low molecular weight compounds such as silicon dioxide, or oligomers, dendrimers, polymers of these low molecular weight compounds As the organic compound, various compounds such as hole transporting compounds can be used. As an organic compound, the hole mobility is 10 -6 cm 2 It is preferable to apply a value of 1 / Vs or more. However, other materials may be used as long as they have a higher hole transporting property than electron transporting property. These materials used for the charge generation layer 320a have the properties of carrier injection and carrier transport. Since the light emitting element 330 has excellent transmission properties, it can be driven at low current and low voltage. can be done.

[0315] The charge generating layer 320a is made of a composite material of an organic compound and a metal oxide, and other materials. For example, a layer containing a composite material of an organic compound and a metal oxide and a layer containing an electron transport material may be formed. A compound selected from the electron donating materials is combined with a layer containing a compound having high electron transport properties. Alternatively, a layer containing a composite material of an organic compound and a metal oxide and a transparent conductive film may be combined. may be formed in combination with each other.

[0316] The light emitting element 331 having such a configuration may have problems such as energy transfer and quenching. It is difficult to achieve this, and the range of materials to choose from is widened, making it possible to create a light-emitting element that has both high luminous efficiency and a long life. It is also easy to obtain phosphorescence in one light-emitting layer and fluorescence in the other. is.

[0317] The charge generating layer 320a is a layer that generates a charge when a voltage is applied between the electrode 318 and the electrode 322. The electron-generating layer 320a has a function of injecting holes into the EL layer 320 formed in contact with the electron-generating layer 320a. The other EL layer 320 has a function of injecting electrons.

[0318] The light-emitting element 331 shown in FIG. 29(B) can be realized by changing the type of light-emitting material used in the EL layer 320. In addition, it is possible to obtain various luminescent colors by using a plurality of luminescent materials with different luminescent colors. By using luminescent materials, it is possible to obtain broad spectrum luminescence and white luminescence. do.

[0319] When white light is to be emitted using the light emitting element 331 shown in FIG. 29(B), a combination of a plurality of EL layers is used. In combination, it is sufficient if the light source emits white light containing red, blue, and green light. For example, a light-emitting layer containing a blue fluorescent material as a light-emitting material and a light-emitting layer containing green and red phosphorescent materials as light-emitting materials may be used. In addition, a light-emitting layer that emits red light and a light-emitting layer that emits green light may be used. It may also have a structure including a light-emitting layer that emits light and a light-emitting layer that emits blue light. Even if the light emitting layer has a structure that emits light of complementary colors, white light can be emitted. In a stacked element in which two layers are stacked, the color of light emitted from the light-emitting layer is different from that of the other light-emitting layer. When the luminescent colors obtained from the above are in a complementary color relationship, the complementary colors are blue and yellow, Alternatively, blue-green and red may be mentioned.

[0320] In the configuration of the above-mentioned stacked element, a charge generating layer may be disposed between the stacked light emitting layers. By doing so, it is possible to realize a long-life element in the high-brightness region while maintaining a low current density. In addition, the voltage drop due to the resistance of the electrode material can be reduced, allowing for uniform generation over a large area. Light becomes possible.

[0321] In addition, the light emitting element 330 and / or the light emitting element 331 may be formed by absorbing light emitted from the EL layer 320. By using a micro-optical resonator (also called a "microcavity") structure that oscillates light, different emitting wavelengths can be obtained. Even if the same EL layer 320 is used in the optical element 331, it is possible to narrow the line width and extract light in different wavelength ranges. This can be done.

[0322] This embodiment mode can be implemented by being appropriately combined with the configurations described in other embodiments. is.

[0323] (Sixth embodiment) In this embodiment, an oxide semiconductor, which is a type of metal oxide, will be described. The body preferably contains indium or zinc, and in particular contains indium and zinc. In addition to these, the element M (M is aluminum, gallium, yttrium, Sodium, copper, vanadium, beryllium, boron, silicon, titanium, iron, nickel, gel Al, zirconium, molybdenum, lanthanum, cerium, neodymium, hafnium, One or more selected from the group consisting of tantalum, tungsten, and magnesium) It may be included.

[0324] Oxide semiconductors, a type of metal oxide, are divided into single-crystal oxide semiconductors and other non-single-crystal oxides. Examples of non-single-crystal oxide semiconductors include CAAC-OS (c-axis aligned crystalline oxide semico conductor, polycrystalline oxide semiconductor, nc-OS (nanocrystalline oxide semiconductor, pseudo-amorphous oxide semiconductor (a-like OS:amorphous-like oxide semiconductor) and amorphous oxide semiconductors.

[0325] CAAC-OS has a c-axis orientation and multiple nanocrystals are connected in the ab-plane direction. The crystal structure has distortion. The distortion is the area where multiple nanocrystals are connected. In the region, the lattice arrangement is changed between a region with a uniform lattice arrangement and another region with a uniform lattice arrangement. Indicates the point where the direction is changing.

[0326] Nanocrystals are basically hexagonal, but they are not limited to regular hexagonal shapes and may be non-regular hexagonal. The distortion may also have a lattice arrangement such as a pentagon or heptagon. In CAAC-OS, clear grain boundaries (grain boundaries) are observed even near the strain. It is not possible to confirm the grain boundary (also called grain boundary distortion) due to the distortion of the lattice arrangement. This is because the CAAC-OS has a high SiO2 content in the ab-plane direction. The oxygen atoms are not densely packed, and the bond distance between atoms changes due to the substitution of metal elements. This is thought to be because distortion can be tolerated by, for example, increasing the thickness.

[0327] In addition, the CAAC-OS has a layer containing indium and oxygen (hereinafter referred to as an In layer) and an element A layered crystal structure in which layers containing M, zinc, and oxygen (hereinafter referred to as (M, Zn) layers) are stacked. It is noted that indium and element M tend to have a layered structure. It is possible, and when the element M in the (M,Zn) layer is replaced with indium, (In,M,Zn) Also, when indium in the In layer is replaced with element M, (In,M ) layer.

[0328] nc-OS is a material that can be used in microscopic areas (e.g., areas between 1 nm and 10 nm, especially areas between 1 nm and 3 nm). The nc-OS has periodic atomic arrangement in the nanometer range (nm or less). There is no regularity in the crystal orientation between the crystals. Therefore, no orientation is observed throughout the film. Therefore, depending on the analysis method, nc-OS may be distinguished from a-like OS or amorphous oxide semiconductor. It may be difficult to distinguish between the two.

[0329] The a-like OS is an oxide semiconductor with a structure between the nc-OS and amorphous oxide semiconductor. Conductive. A-like OS has voids or low density regions. The OS has lower crystallinity than the nc-OS and CAAC-OS.

[0330] Oxide semiconductors, a type of metal oxide, have a variety of structures, each with different properties. The oxide semiconductor that can be used in one embodiment of the present invention is an amorphous oxide semiconductor, a polycrystalline oxide semiconductor, or a crystalline oxide semiconductor. Two or more of crystalline oxide semiconductor, a-like OS, nc-OS, and CAAC-OS It may also have a CAC-OS.

[0331] This embodiment mode can be implemented by being appropriately combined with the configurations described in other embodiments. is.

[0332] (Embodiment 7) In this embodiment, an example of an electronic device using a display device according to one embodiment of the present invention will be described. do.

[0333] Examples of electronic devices using a display device according to one embodiment of the present invention include display devices such as televisions and monitors, Lighting equipment, desktop or notebook personal computers, word processors , stored on a recording medium such as a DVD (Digital Versatile Disc), Image playback devices that play still or moving images, portable CD players, radios, tape players Coder, headphone stereo, stereo, table clock, wall clock, cordless telephone handset, Transceivers, car phones, mobile phones, personal digital assistants, tablet devices, portable games machines, fixed game machines such as pachinko machines, calculators, electronic organizers, e-books, electronic translators, voice input High frequency processing equipment such as power equipment, video cameras, digital still cameras, electric shavers, microwave ovens, etc. Heating equipment, electric rice cookers, electric washing machines, electric vacuum cleaners, water heaters, electric fans, hair dryers, air conditioners Air conditioning equipment such as conditioners, humidifiers, and dehumidifiers, dishwashers, dish dryers, clothes dryers, Futon dryers, electric refrigerators, electric freezers, electric refrigerator-freezers, freezers for DNA storage, flashlights , tools such as chainsaws, smoke detectors, medical equipment such as dialysis machines, etc. Guide lights, traffic lights, conveyor belts, elevators, escalators, industrial robots, power storage Examples include industrial equipment such as storage systems, power leveling and smart grid storage devices. In addition, there are vehicles that are propelled by engines that use fuel or electric motors that use electricity from electricity storage devices. Moving objects may also be included in the category of electronic devices. electric vehicles (EVs), hybrid vehicles (HEVs) that combine an internal combustion engine and an electric motor, plug-in hybrid vehicles (PHDs), Hybrid vehicles (PHEV), tracked vehicles that use these tires and wheels as tracks, electric assist vehicles Motorized bicycles including street bicycles, motorcycles, electric wheelchairs, golf carts, small or Large ships, submarines, helicopters, aircraft, rockets, satellites, space probes and planetary exploration aircraft, spacecraft, etc.

[0334] The electronic devices described in this embodiment mode can be equipped with the above-described display device or the like.

[0335] As an example of the electronic device, electronic device 31 is shown in FIGS. 30(A), (B), (C), and (D). 30(E) shows the area indicated by the dashed line A1-A2 in FIG. 30(C) and (D) show the state where the electronic device 3100 is folded in half. FIG. 30(A) shows the electronic device 3100 in an open state. ) shows the electronic device 3100 in the middle of opening or closing.

[0336] The electronic device 3100 includes a housing 3101, a housing 3102, a hinge portion 3103, a cover material 310 4, the display device 3110, the circuit board 3160, the battery 3170a, and the battery 317 0b, etc. On the circuit board 3160, a central processing unit, a storage device, a display control In addition, other semiconductor devices and the like are provided in an area 3151 in the housing 3101. In addition, the area 3151 may be provided with a heat dissipation member, a member for absorbing or blocking electromagnetic waves, etc. Functional elements, such as magnetic shielding elements, may also be provided.

[0337] The housing 3101 and the housing 3102 are connected by a hinge portion 3103. The hinge 3103 and the housing 3102 can rotate relative to each other around the axis of the hinge 3103. do.

[0338] The display device 3110 has a display area 3111 overlapping the housing 3101 and a display area 3112 overlapping the housing 3102. The display device 3110 has a display area 3112 that overlaps the display area 3111. The cover material 3104 has a bending region (not shown) between the display region 3112. 111 and a region overlapping with the display region 3112. The element 104 has a function of transmitting visible light.

[0339] The electronic device 3100 may be provided with a touch sensor or the like as an input device. The display device 3100 may be provided with a camera, a microphone, a speaker, a communication device, and the like. The display device described in the above embodiment mode can be used as 3110.

[0340] This embodiment mode can be implemented by being appropriately combined with the configurations described in other embodiments. is. [Explanation of symbols]

[0341] 100 Electronic equipment 101 Case 102 Audio output device 103 Operation switch 104 Voice input device 105 Imaging device 110 Display device 111 Display area 112 Display area 113 Display area 114 Bend area 115 Bend area 121 Input terminal 122 input terminal 123 Input terminal 131 Touch Sensor 132 Touch Sensor Controller 141 Bus Line 150 Display device 151 areas 160 Circuit Board 161 Arithmetic equipment 162 Communication equipment 163 Storage device 164 Display control device 165 Attitude detection unit 166 Vibration device 167 Sensor Module 168 External Interface 169 Sound Controller 170 Battery 171 Battery Controller 172 Power receiving unit 180 Antenna 223 Electrode 225 Display element 226 Insulating Layer 230 pixels 235 Wiring 236 Wiring 237 Pixel Circuit 242 Semiconductor layer 245 Wiring 246 Electrode 311 Electrode 318 Electrode 320 EL layer 322 Electrode 330 Light-emitting element 331 Light-emitting element 340 Liquid Crystal Devices 360 Light-emitting element

Claims

1. 1. A display device having a first display area, a curved second display area, and a curved third display area, a flexible substrate; A first wiring; and an FPC, the first to third display regions and the first wiring are provided on the substrate; the first display area is located between the second display area and the third display area; the substrate has a first region located between the first display region and the second display region and having no pixels, and a second region located between the first display region and the third display region and having no pixels; In a plan view in which the substrate is developed, the substrate has a first side extending in a first direction, a second side extending in the first direction and shorter than the first side, a third side extending in a second direction perpendicular to the first direction, and a fourth side extending in the second direction; In the plan view, the first display area has an area located between the first side and the second side, In the plan view, the second display area has an area located between the third side and the first display area, In the plan view, the third display area has an area located between the fourth side and the first display area, a first portion of the substrate having the second side has a first input terminal electrically connected to the FPC; the first portion is curved so that the second side is located on the back side of the display surface of the first display area, the second display area is curved so that the third side is located on the back side of the display surface of the first display area, the third display area is curved so that the fourth side is located on the back side of the display surface of the first display area, the first wiring is electrically connected to a first pixel included in the first display region, a second pixel included in the second display region, and a third pixel included in the third display region; the first wiring has a second portion having a meandering or serpentine shape and a third portion having a meandering or serpentine shape; the second portion is provided in the first region, The display device, wherein the third portion is provided in the second area.

2. 1. A display device having a first display area, a curved second display area, and a curved third display area, a flexible substrate; A first wiring; and an FPC, the first to third display regions and the first wiring are provided on the substrate; the first display area is located between the second display area and the third display area; the substrate has a first region located between the first display region and the second display region and having no pixels, and a second region located between the first display region and the third display region and having no pixels; In a plan view in which the substrate is developed, the substrate has a first side extending in a first direction, a second side extending in the first direction and shorter than the first side, a third side extending in a second direction perpendicular to the first direction, and a fourth side extending in the second direction; In the plan view, the first display area has an area located between the first side and the second side, In the plan view, the second display area has an area located between the third side and the first display area, In the plan view, the third display area has an area located between the fourth side and the first display area, a first portion of the substrate having the second side has a first input terminal electrically connected to the FPC; the first portion is curved so that the second side is located on the back side of the display surface of the first display area, the second display area is curved so that the third side is located on the back side of the display surface of the first display area, the third display area is curved so that the fourth side is located on the back side of the display surface of the first display area, the first wiring is electrically connected to a first pixel included in the first display region, a second pixel included in the second display region, and a third pixel included in the third display region; the first wiring has a second portion having a meandering or serpentine shape and a third portion having a meandering or serpentine shape; the second portion is provided in the first region, the third portion is provided in the second region, A display device, wherein the first wiring does not have a meandering or serpentine shape in each of the first to third display areas.

3. 1. A display device having a first display area, a curved second display area, and a curved third display area, a flexible substrate; A first wiring; and an FPC, the first to third display regions and the first wiring are provided on the substrate; the first display area is located between the second display area and the third display area; the substrate has a first region located between the first display region and the second display region and having no pixels, and a second region located between the first display region and the third display region and having no pixels; In a plan view in which the substrate is developed, the substrate has a first side extending in a first direction, a second side extending in the first direction and shorter than the first side, a third side extending in a second direction perpendicular to the first direction, and a fourth side extending in the second direction; In the plan view, the first display area has an area located between the first side and the second side, In the plan view, the second display area has an area located between the third side and the first display area, In the plan view, the third display area has an area located between the fourth side and the first display area, a first portion of the substrate having the second side has a first input terminal electrically connected to the FPC; the first portion is curved so that the second side is located on the back side of the display surface of the first display area, the second display area is curved so that the third side is located on the back side of the display surface of the first display area, the third display area is curved so that the fourth side is located on the back side of the display surface of the first display area, the first wiring is electrically connected to a first pixel included in the first display region, a second pixel included in the second display region, and a third pixel included in the third display region; the first wiring has second to fifth portions each having a meandering or serpentine shape; the second portion is provided in the first region, the third portion is provided in the second region, the fourth portion is provided in the second display area, the fifth portion is provided in the third display area, A display device, wherein the first wiring does not have a meandering or serpentine shape in the first display region.

4. In claim 3, a display device, wherein, in a planar view, the amplitude of the meandering or serpentine shape of the first wiring in the fourth portion is smaller than the amplitude of the meandering or serpentine shape of the first wiring in the second portion or the third portion.

Images