Intelligent Power Module

Abstract

To provide an intelligent power module and an electric vehicle or a hybrid car which have an excellent heat radiation property, are easy for modularization, and suitable for miniaturization, and a method for assembling the intelligent power module.SOLUTION: An IPM 101 includes: a heat radiation device 110; an attaching frame 120 disposed on a mounting surface 110a on the heat radiation device 110; a power semiconductor module 130 (1301, 1302, 1303) which is installed on the basis of the attaching frame 120 and seals a semiconductor device; and a driving circuit section 180 which is mounted on the power semiconductor module 130 (1301, 1302, 1303) via a heat insulating sheet 150 and drives the power semiconductor module 130 (1301, 1302, 1303).SELECTED DRAWING: Figure 1

Description

[Technical Field]

[0001] In this embodiment, Intelligent Power Module Regarding. [Background technology]

[0002] Standards for safety functions (such as fail-safe, abnormality detection, and safe shutdown) for all parts installed in automobiles are currently being reviewed. In particular, many of the devices installed in automobiles are electrically / electronically controlled, and there is an important need not only for high performance and functionality, but also for ensuring safety.

[0003] The international standard ISO26262 has been formulated, which systematically compiles development methods and management methods for safe in-vehicle equipment.

[0004] Furthermore, one type of semiconductor module that can be used in automotive equipment is a power semiconductor module in which the outer periphery of a power element (chip) including a semiconductor device such as an insulated gate bipolar transistor (IGBT) is molded with resin. Because semiconductor devices generate heat during operation, it is common to dissipate the heat by placing a heat sink or fins on the back side to cool the semiconductor device.

[0005] Also known is an intelligent power module that includes a cooler and uses a cooling liquid to cool the power semiconductor module in order to further enhance the heat dissipation effect. [Prior art documents] [Patent documents]

[0006] [Patent Document 1] International Publication No. 2013 / 001999 [Patent Document 2] Japanese Patent Application Laid-Open No. 2009-224445 [Patent Document 3] International Publication No. 2013 / 054408 [Non-patent literature]

[0007] [Non-Patent Document 1] "ISO 26262-1:2011", [online], 2011-11-15, International Organization for Standardization, [Retrieved February 17, 2016], Internet<URL:https: / / www.iso.org / obp / ui / #iso:std:iso:26262:-1:ed-1:v1:en> Summary of the Invention [Problem to be solved by the invention]

[0008] This embodiment has excellent heat dissipation characteristics, is easy to modularize, and is suitable for miniaturization. Intelligent Power Module to provide. [Means for solving the problem]

[0009] According to one aspect of the present embodiment, a heat dissipation device and An intelligent power module comprising a resin molded power module and a resin frame having at least one opening, wherein the resin frame: the heat dissipation device of Placed on the mounting surface The resin molded power module comprises: The resin frame is used as a guide member, The resin frame is coated on the mounting surface in the opening. In the opening through the joining member The mounting surface of Joined to The resin molded power module has terminal electrodes, and the terminal electrodes and the resin frame are arranged spaced apart from each other. An intelligent power module is provided. [Effects of the Invention]

[0011] According to this embodiment, the heat dissipation characteristics are excellent, modularization is easy, and it is suitable for miniaturization. Intelligent Power Module can be provided. [Brief explanation of the drawings]

[0012] [Figure 1] FIG. 1 is a plan view showing a schematic configuration of an intelligent power module according to a first embodiment. [Figure 2]1 is a side view showing a schematic configuration of an intelligent power module according to a first embodiment. [Figure 3] FIG. 2 is another side view showing the schematic configuration of the intelligent power module according to the first embodiment. [Figure 4] 4 is a diagram showing a main part of the configuration of the intelligent power module according to the first embodiment, and is a schematic cross-sectional structural diagram taken along line IV-IV in FIG. [Figure 5] 2 is a diagram showing a main part of the configuration of the intelligent power module according to the first embodiment, and is a schematic cross-sectional structural diagram taken along line VV in FIG. 1. FIG. [Figure 6] 1 is a bird's-eye view showing a schematic configuration of a power semiconductor module applicable to an intelligent power module according to a first embodiment. [Figure 7] Schematic exploded structural diagrams of an intelligent power module according to a first embodiment, including (a) a bird's-eye view of a drive circuit section, (b) a bird's-eye view of a heat dissipation sheet, (c) a bird's-eye view of a pressure plate, (d) a bird's-eye view of a heat insulating sheet, (e) a bird's-eye view of a power semiconductor module, (f) a bird's-eye view of a mounting frame, and (g) a bird's-eye view of a heat dissipation device. [Figure 8] 1 is a schematic bird's-eye view configuration diagram of an automatic assembly device applicable to the manufacture of an intelligent power module according to a first embodiment. [Figure 9] Schematic exploded structural diagrams of an intelligent power module according to a second embodiment, including (a) a bird's-eye view of a drive circuit section, (b) a bird's-eye view of a heat dissipation sheet, (c) a bird's-eye view of a heat dissipation plate, (d) a bird's-eye view of a heat insulating sheet, (e) a bird's-eye view of a power semiconductor module, (f) a bird's-eye view of a mounting frame, and (g) a bird's-eye view of a heat dissipation device. [Figure 10] FIG. 10 is a plan view showing a schematic configuration of an intelligent power module according to a third embodiment. [Figure 11] 11 is a diagram showing a main part of the configuration of the intelligent power module according to the third embodiment, and is a schematic cross-sectional structural diagram taken along line XI-XI in FIG. [Figure 12]12 is a diagram showing a main part of the configuration of the intelligent power module according to the third embodiment, and is a schematic cross-sectional structural diagram taken along line XII-XII in FIG. [Figure 13] 10 is a schematic exploded view of an intelligent power module according to a third embodiment, showing (a) a bird's-eye view of a drive circuit section, (b) a bird's-eye view of a heat dissipation sheet, (c) a bird's-eye view of a pressure plate, (d) a bird's-eye view of a heat insulating sheet, (e) a bird's-eye view of a power semiconductor module, (f) a bird's-eye view of a mounting frame, and (g) a bird's-eye view of a heat dissipation device (heat sink + cooler). [Figure 14] FIG. 11 is a plan view showing a schematic configuration of an intelligent power module according to a modified example of the third embodiment. [Figure 15] 15 is a diagram showing a main part of the configuration of an intelligent power module according to a modified example of the third embodiment, and is a schematic cross-sectional structural diagram taken along line XV-XV in FIG. 14. [Figure 16] 16 is a diagram showing a main part of the configuration of an intelligent power module according to a modified example of the third embodiment, and is a schematic cross-sectional structural diagram taken along line XVI-XVI in FIG. 14. [Figure 17] 10 is a schematic exploded view of an intelligent power module according to a modified example of the third embodiment, showing (a) a bird's-eye view of a drive circuit section, (b) a bird's-eye view of a heat dissipation sheet, (c) a bird's-eye view of a pressure plate, (d) a bird's-eye view of a heat insulating sheet, (e) a bird's-eye view of a power semiconductor module, (f) a bird's-eye view of a mounting frame, and (g) a bird's-eye view of a heat dissipation device (heat sink + radiator). [Figure 18] FIG. 11 is a bird's-eye view showing another example of the configuration of a heat sink applicable to an intelligent power module according to a modified example of the third embodiment. [Figure 19] 1 is a block diagram showing an example of the configuration of a drive circuit section applicable to an intelligent power module in a power control unit of an electric vehicle or hybrid car equipped with the intelligent power module according to a first embodiment. [Figure 20]1A and 1B are schematic diagrams showing an example of the configuration of a drive circuit section applicable to an intelligent power module in a power control unit of an electric vehicle or hybrid car equipped with an intelligent power module according to a first embodiment, in which (a) is a schematic diagram showing the planar pattern configuration on the front side, and (b) is a schematic diagram showing the planar pattern configuration on the back side in a see-through manner. [Figure 21] 1 is a schematic configuration diagram of a three-phase AC inverter configured using an intelligent power module according to a first embodiment. [Figure 22] 1 is a circuit configuration diagram of a three-phase AC inverter configured using an intelligent power module according to a first embodiment. [Figure 23] 1A and 1B are examples of power semiconductor modules applicable to the intelligent power module according to the first embodiment, in which (a) is a circuit representation diagram of an SiC MOSFET in the two-in-one module, and (b) is a circuit representation diagram of an IGBT in the two-in-one module. [Figure 24] 3A and 3B are examples of a power semiconductor module applicable to the intelligent power module according to the first embodiment, showing a schematic cross-sectional structure diagram of an SiC MOSFET and a schematic cross-sectional structure diagram of an IGBT. [Figure 25] 3 is a schematic cross-sectional structural view of an SiC MOSFET including a source pad electrode SP and a gate pad electrode GP, which is an example of a power semiconductor module applicable to the intelligent power module according to the first embodiment. FIG. [Figure 26] 1 is a schematic cross-sectional structural view of an IGBT including an emitter pad electrode EP and a gate pad electrode GP, which is an example of a power semiconductor module applicable to the intelligent power module according to the first embodiment. [Figure 27] 1 is a schematic cross-sectional structural view of a SiC DI MOSFET, which is an example of a power semiconductor module applicable to the intelligent power module according to the first embodiment. [Figure 28] 1 is a schematic cross-sectional structural view of a SiC T MOSFET, which is an example of a power semiconductor module applicable to the intelligent power module according to the first embodiment. FIG. [Figure 29] In the circuit configuration of a three-phase AC inverter configured using the intelligent power module according to the first embodiment, (a) an example of a circuit configuration in which SiC MOSFETs are used and a snubber capacitor is connected between the power supply terminal PL and the ground terminal NL, and (b) an example of a circuit configuration in which IGBTs are used and a snubber capacitor is connected between the power supply terminal PL and the ground terminal NL. [Figure 30] FIG. 2 is a circuit configuration diagram of a three-phase AC inverter configured using the intelligent power module according to the first embodiment, to which SiC MOSFETs are applied. [Figure 31] 1 is a circuit configuration diagram of a three-phase AC inverter to which IGBTs are applied, in a circuit configuration of a three-phase AC inverter configured using an intelligent power module according to a first embodiment. [Figure 32] 1 is a schematic block diagram showing an example in which an intelligent power module according to a first embodiment is applied to a power control unit of an electric vehicle or a hybrid car. [Figure 33] 1 is a block diagram showing the main parts of a power control unit of an electric vehicle to which an intelligent power module according to a first embodiment is applied. [Figure 34] 1 is a block diagram showing the main parts of a power control unit of a hybrid car to which an intelligent power module according to a first embodiment is applied. [Figure 35] 1A is a plan view of a power semiconductor module applicable to an intelligent power module according to an embodiment, and FIG. 1B is a plan pattern configuration diagram showing the internal structure of the power semiconductor module. [Figure 36] 1A is a plan view of a power semiconductor module applicable to an intelligent power module according to an embodiment, and FIG. 1B is a circuit representation of the power semiconductor module. DETAILED DESCRIPTION OF THE INVENTION

[0013] Next, the present embodiment will be described with reference to the drawings. In the drawings described below, the same or similar parts are designated by the same or similar reference numerals. However, it should be noted that the plan views, side views, bottom views, cross-sectional views, etc. are schematic, and the relationship between the thickness and planar dimensions of each component may differ from the actual relationship. Therefore, specific thicknesses and dimensions should be determined with reference to the following explanation. Furthermore, it goes without saying that the drawings may include parts with different dimensional relationships and ratios.

[0014] Furthermore, the embodiments shown below are merely examples of devices and methods for embodying the technical ideas, and do not specify the materials, shapes, structures, arrangements, etc. of each component part. Various modifications can be made to the embodiments within the scope of the claims.

[0015] [First embodiment] (Outline of intelligent power module configuration) The planar structure of an intelligent power module (IPM) 101 according to the first embodiment is shown in Fig. 1. In Fig. 1, a part of a drive circuit section 180 and the like are shown in a transparent manner. A schematic exploded view of the structure is shown in Fig. 7.

[0016] 1 is shown in FIG. 2, and the other side structure viewed from the direction of the arrow B in FIG. 1 is shown in FIG. 3. The cross-sectional structure taken along line IV-IV in FIG. 1 is shown in FIG. 4, and the cross-sectional structure taken along line VV in FIG. 1 is shown in FIG.

[0017] 1 to 5, the IPM 101 includes a heat dissipation device 110 (which may be, for example, a heat dissipation plate (cooling plate) such as an aluminum (Al) heat sink or a cooler such as a water jacket (WJ)), a mounting frame 120 disposed on a mounting surface 110a of the heat dissipation device 110, and a plurality of (for example, three) power semiconductor modules 130 (molded power modules 1301, 1302, and 1303 hereinafter referred to as "each power semiconductor module 130") mounted on the mounting surface 110a within a frame 122 using the mounting frame 120 as a guide member. n "), and each power semiconductor module 130 n The package 132 is provided with a drive circuit section (gate drive substrate, for example, FR-4, 6 layers) 180 mounted thereon with a heat insulating sheet 150, a presser plate 160S, and a heat dissipation sheet 170 in that order.

[0018] That is, the IPM 101 according to the first embodiment includes a heat dissipation device 110, a mounting frame 120 arranged on a mounting surface 110a on the heat dissipation device 110, a power semiconductor module 130 (1301, 1302, 1303) mounted based on the mounting frame 120 and encapsulating a semiconductor device, and a drive circuit unit 180 mounted on the power semiconductor module 130 via a heat insulating sheet 150 and driving the power semiconductor module 130.

[0019] Each power semiconductor module 130 mounted on the heat dissipation device 110 n The joining positions of the IPM 101 and the IPM 201 are determined in advance by the mounting frame 120 arranged on the mounting surface 110a, which allows for automation and unmanned assembly of the IPM 101 (details will be described later).

[0020] The mounting frame 120 also has the effect of increasing the rigidity of the heat dissipation device 110 and suppressing twisting and warping of the heat dissipation device 110 .

[0021] Here, the mounting surface 110a of the heat dissipation device 110 is provided in advance with a thermally conductive resin layer 210T formed of a thermally conductive resin as a bonding material. The thermally conductive resin layer 210T may be formed of, for example, a sheet-like or paste-like thermal compound. When the thermally conductive resin layer 210T is applied, each of the mounted power semiconductor modules 130 n is not fixed and is in a held-in state (unstable bond).

[0022] In the IPM 101 according to the first embodiment, each power semiconductor module 130 n In order to eliminate the instability of the joints between the power semiconductor modules 130 and the power semiconductor module 130, the presser plate 160S is formed of a thin metal plate made of, for example, stainless steel having spring properties. n This prevents unnecessary movements such as misalignment and sinking during assembly.

[0023] That is, in the IPM 101 according to the first embodiment, each power semiconductor module 130 is mounted on the mounting surface 110a of the heat dissipation device 110. n The joining member 210T joins each power semiconductor module 130 n The heat sink 110 is provided with a thermally conductive resin that holds the heat sink 110 on the mounting surface 110a.

[0024] Furthermore, on the heat insulating sheet 150, a metal thin plate having spring properties is provided between the drive circuit unit 180 and each power semiconductor module 130 held by a thermally conductive resin 210T. n The device further includes a pressure plate (160S) for restricting the movement of the device, and a heat dissipation sheet (170).

[0025] (Detailed configuration of the intelligent power module) The IPM 101 according to the first embodiment includes, for example, each power semiconductor module 130 nBy adopting a two-in-one type for each of the power semiconductor modules 130, a six-in-one type switching module can be configured (details will be described later). In the IPM 101 configuring the switching module, each power semiconductor module 130 n This allows for efficient cooling and prevents deterioration due to overheating.

[0026] That is, the IPM 101 according to the first embodiment includes a heat dissipation device 110, a mounting frame 120 disposed on a mounting surface 110a of the heat dissipation device 110, and power semiconductor modules 130 (each power semiconductor module 130) mounted on the mounting frame 120 and sealing a semiconductor device. n ) and a drive circuit section 180 mounted on the power semiconductor module 130 via a heat insulating sheet 150 and driving the power semiconductor module 130, and a plurality of power semiconductor modules 130 are arranged to form a two-in-one module, thereby forming a six-in-one module type inverter or converter.

[0027] In the following description, for example, a case will be described in which a 6-in-1 type switching module is configured by three 2-in-1 type power semiconductor modules 1301, 1302, and 1303.

[0028] That is, each power semiconductor module 130 n 7(g), the heat dissipation device 110 is configured to be able to mount, for example, up to three power semiconductor modules 1301, 1302, and 1303. The heat dissipation device 110 has a heat dissipation section 112 formed of, for example, aluminum in a rectangular parallelepiped shape, and a cooling pipe 113 is arranged in a bellows shape inside the heat dissipation section 112. The heat dissipation device 110 cools each power semiconductor module 130 by circulating cooling water inside a cooling path 115 of the cooling pipe 113. n It is a water-cooled cooler that cools the

[0029] The heat dissipation device 110 is provided with a water injection section 117 at one end of the mounting surface 110a on the heat dissipation section 112, where an inlet 116 is arranged to take in cooling water into the cooling pipe 113, and a drainage section 119 at the other end of the mounting surface 110a, where an outlet 118 is arranged to discharge the cooling water that has circulated inside the cooling pipe 113.

[0030] In the heat dissipation device 110, cooling water is taken into the cooling pipe 113 from the inlet 116 in the direction shown by the arrows in Figures 1 and 2, passes through the cooling path 115, and is discharged from the outlet 118, thereby efficiently cooling the heat generated by the power semiconductor module 130. As the cooling water, for example, water or a mixed liquid obtained by mixing water and ethylene glycol in a 50% to 50% ratio is used.

[0031] The cooling pipe 113 of the heat dissipation device 110 may be folded back parallel to the short-side direction of the heat dissipation unit 112, or may be folded back parallel to the long-side direction. The cooling pipe 113 may be omitted, and the heat dissipation unit 112 may be configured so that cooling water circulates throughout the entire interior of the heat dissipation unit 112. The water injection unit 117 and the drainage unit 119 are not limited to being arranged parallel to the long-side direction of the heat dissipation unit 112, but may also be arranged parallel to the short-side direction. Alternatively, the water injection unit 117 and the drainage unit 119 may be provided so as to be rotatable at a predetermined angle relative to the heat dissipation unit 112.

[0032] At one end of the heat dissipation section 112, there are provided base sections 114 for fixing the heat insulating sheet 150 and the presser plate 160S with fixing devices 190 such as screws. n This serves as the mounting surface 110a for mounting the device.

[0033] On the mounting surface 110a, each power semiconductor module 130 n Before mounting the power semiconductor modules 130, a thermally conductive resin layer 210T is formed in advance. nFor example, a copper plate layer (not shown) serving as a heat spreader is bonded to the back surface of each package 21.

[0034] 1 to 5, the mounting frame 120 is a resin frame capable of mounting, for example, three power semiconductor modules 1301, 1302, and 1303, and has three openings 1241, 1242, and 1243 in the frame 122. The three openings 1241, 1242, and 1243 are provided for each of the power semiconductor modules 130. n The size of each power semiconductor module 130 is approximately the same as or slightly larger than the size of the package 132 of the power semiconductor module 130. n are guided onto the mounting surface 110a of the heat dissipation part 112 based on the mounting frame 120, and are bonded to the openings 1241, 1242, and 1243 defined by the frame 122 via the thermally conductive resin layer 210T.

[0035] 7(f), the mounting frame 120 has a plurality of fixing portions 126 for fixing the heat insulating sheet 150, the presser plate 160S, the heat dissipation sheet 170, and the drive circuit unit 180 on the frame 122 with fasteners 192 such as screws. For example, two fixing portions 126 are provided at each end of the frame 122 in the short direction, and one fixing portion 126 is provided between the openings 1241 and 1242 and between the openings 1242 and 1243.

[0036] Here, each power semiconductor module 130 n 6, each power semiconductor module 130 has the same structure, and includes a rectangular package 132 in which the outer periphery of a power element (chip) including a semiconductor device (not shown) is sealed with molding resin or the like. As an example, each power semiconductor module 130 has a three-terminal structure including three terminal electrodes (O·P·N) 134, 136, and 138, one each. n In the three-terminal structure, for example, each power semiconductor module 130 has two sets of five lead terminals (SS·GS·S·T1·T2) 140. n is shown as an example.

[0037] The lead terminals 140 include, for example, a lead terminal SS for a source sense signal, a lead terminal GS for a gate sense signal, a lead terminal S for a source signal, and n The device has lead terminals T1 and T2 for temperature measurement signals from the built-in thermistor, etc.

[0038] That is, each power semiconductor module 130 n For example, the package 132 includes an output terminal electrode (O) 134 provided along a first side of the package 132, and a drain terminal electrode (P) 136 and a ground potential terminal electrode (N) 138 provided on a third side opposite the first side of the package 132. In addition, lead terminals (SS·GS·S·T1·T2) 140 provided along a second side perpendicular to the first and third sides of the package 132 and lead terminals (SS·GS·S·T1·T2) 140 provided along a fourth side each extend to the outside of the package 132 and are further bent upwards substantially perpendicular to the package 132.

[0039] In short, each power semiconductor module 130 n Details will be given later, but each is a 2-in-1 type with two built-in semiconductor devices.

[0040] In addition, each power semiconductor module 130 n Alternatively, the three terminal electrodes 134, 136, and 138 may be arranged in either direction along the longitudinal direction of the heat dissipation portion 112.

[0041] The heat insulating sheet 150 and the pressing plate 160S disposed on the package 132 are, as shown in FIG. 7(d) and FIG. 7(c), nThe heat dissipation sheet 170 and the drive circuit section 180 also have a plurality of openings through which the lead terminals (SS, GS, S, T1, T2) 140 are inserted, but for convenience, they are not shown in the drawings.

[0042] 7(c), the pressing plate 160S has a plurality of through holes 166 through which the fasteners 190 are respectively inserted. Similarly, the heat insulating sheet 150 may have a plurality of through holes through which the fasteners 190 are respectively inserted.

[0043] As shown in FIGS. 7(d) to 7(a), the heat insulating sheet 150, the presser plate 160S, the heat dissipation sheet 170, and the drive circuit section 180 have a plurality of through holes 154, 164, 174, and 184 through which the fixing members 192 are inserted, respectively.

[0044] Heat dissipation sheet 170 is made of a heat dissipation resin such as silicone resin, which has heat dissipation properties. Presser plate 160S and drive circuit section 180 are firmly joined via heat dissipation sheet 170, thereby ensuring high heat dissipation properties of drive circuit section 180. That is, a portion of the heat generated by drive circuit section 180 is absorbed by heat dissipation sheet 170 and then dissipated by presser plate 160S.

[0045] The heat insulating sheet 150, the heat dissipation sheet 170, and the drive circuit section 180 are all attached to each power semiconductor module 130. n The present invention is not limited to a configuration in which the power semiconductor modules 130 are disposed as an integral structure. n The configuration may be such that the components are arranged separately for each component.

[0046] (Intelligent Power Module Assembly) A schematic exploded bird's-eye view of the IPM 101 according to the first embodiment is shown in FIGS. 7(a) to 7(g).

[0047] Here, an assembly method for manufacturing the IPM 101 according to the first embodiment will be described with reference to FIGS. 7(a) to 7(g).

[0048] First, as shown in FIG. 7(g), a heat dissipation device 110 is prepared in which a thermally conductive resin layer 210T is formed on the mounting surface 110a of the heat dissipation portion 112 in advance.

[0049] Next, as shown in FIG. 7(f), the attachment frame 120 is placed at a predetermined position on the attachment surface 110a on which the thermally conductive resin layer 210T has been formed.

[0050] Next, the power semiconductor modules 130 are inserted into the openings 1241, 1242, and 1243 of the mounting frame 120. n 7(e), each power semiconductor module 130 is attached and bonded to the attachment surface 110a by the thermally conductive resin layer 210T. n Each of the lead terminals (SS, GS, S, T1, T2) 140 is bent in advance.

[0051] Next, as shown in FIG. 7(d), each power semiconductor module 130 joined onto the mounting surface 110a is n A heat insulating sheet 150 is attached onto the package 132 so that the lead terminals (SS, GS, S, T1, T2) 140 pass through the openings 152, respectively.

[0052] Next, as shown in FIG. 7(c), each power semiconductor module 130 is placed on the heat insulating sheet 150. n The retainer plate 160S is attached so that the lead terminals (SS, GS, S, T1, T2) 140 are inserted through the openings 162, respectively.

[0053] In this state, the presser plate 160S is fixed to the base portion 114 having mounting holes by means of fasteners 190 such as screws, thereby securing each power semiconductor module 130 n The power semiconductor modules 130 can be fixed on the mounting surface 110a on which the thermally conductive resin layer 210T is provided. nThe mounting surface 110a is pressed down by the spring-like pressing plate 160S against the mounting surface 110a on which the thermally conductive resin layer 210T is provided. As a result, even when the thermally conductive resin layer 210T is used as the joining member, the subsequent assembly process, for example, the process of mounting the drive circuit unit 180, can be performed without requiring the mounting of the drive circuit unit 180. n This allows the procedure to be carried out in a good condition with the material stably fixed.

[0054] Next, as shown in FIG. 7(b), each power semiconductor module 130 is placed on the pressing plate 160S. n The heat dissipation sheet 170 is attached so that the lead terminals (SS, GS, S, T1, T2) 140 are inserted through the openings (not shown).

[0055] Next, as shown in FIG. 7(a), each power semiconductor module 130 is placed on the heat dissipation sheet 170. n The drive circuit unit 180 is mounted so that the lead terminals (SS, GS, S, T1, T2) 140 of the power semiconductor modules 130 are inserted through the openings (not shown). n The connection to each lead terminal (SS·GS·S·T1·T2) 140 is performed as needed.

[0056] Finally, the drive circuit section 180, the heat dissipation sheet 170, the pressure plate 160S, and the heat insulating sheet 150 are fixed together to the fixing section 126 on the frame frame 122 of the mounting frame 120 using fixing devices 192 such as screws, thereby completing the IPM 101 shown in Figures 1 to 5.

[0057] In this way, according to the IPM 101 according to the first embodiment, for example, each power semiconductor module 130 mounted on the heat dissipation device 110 n Since the joining positions of the power semiconductor modules 130 are predetermined by the mounting frame 120 arranged on the mounting surface 110a, n This allows for highly accurate and automated mounting of the components on the mounting surface 110a.

[0058] That is, the method of assembling the IPM 101 according to the first embodiment includes the steps of attaching the mounting frame 120 to the mounting surface 110a on the heat dissipation device 110, attaching the power semiconductor module 130 that is attached based on the mounting frame 120 and encapsulates a semiconductor device, and mounting the drive circuit unit 180 that drives the power semiconductor module 130 on the power semiconductor module 130 via the heat insulating sheet 150.

[0059] The method further includes the steps of forming a thermally conductive resin layer 210T on the mounting surface 110a to hold the power semiconductor module 130, placing a pressure plate 160S on the heat insulating sheet 150 to restrict movement of the power semiconductor module 130 held by the thermally conductive resin layer 210T, and placing a heat dissipation sheet 170 on the pressure plate 160S.

[0060] (Automated assembly of intelligent power modules) In assembling the IPM 101 according to the first embodiment, a schematic bird's-eye view of the automatic assembly apparatus 800 automatically mounting the power semiconductor module 130 onto the heat dissipation device 110 is shown in FIG.

[0061] As shown in FIG. 8, the automatic assembly device 800 includes, for example, a conveyance path 810, a robot arm 820, and a work table 830, and automatically mounts the power semiconductor module 130 on the heat dissipation device 110.

[0062] The conveying path 810 conveys, for example, a plurality of heat dissipation devices 110, each having a mounting frame 120 pre-placed on a thermally conductive resin layer 210T on the mounting surface 110a, at a constant interval and at a constant speed in the direction of the arrow C shown in the drawing.

[0063] The robot arm 820 includes, for example, a first arm section 822, a second arm section 824, and a working unit 826. The robot arm 820 is disposed near the transport path 810, and the first arm section 822 is provided so as to be freely rotatable. A second arm section 824 is supported at the tip of the first arm section 822 so as to be movable up and down in the direction of arrow D in the figure. The working unit 826 is detachably attached to the tip of the second arm section 824. The second arm section 824 may be configured to be extendable and retractable, for example, in the direction of arrow E in the figure.

[0064] The working unit 826 is replaceable depending on the type of work or the type of parts to be assembled, and here, for example, a working unit that can suck and carry the power semiconductor module 130 using a suction device 828 is shown as an example. The suction device 828 of the working unit 826 may be configured to be able to move up and down in the direction of the arrow F in the drawing, for example.

[0065] The working unit 826 also includes, for example, a sensor camera (not shown) for recognizing the positions of the openings 1241, 1242, and 1243 of the mounting frame 120 arranged on the mounting surface 110a of the heat dissipation device 110.

[0066] The robot arm 820 configured in this way can be controlled with high precision by remote operation from a computer (PC) located at a remote location, for example.

[0067] Furthermore, the robot arm 820 may be configured to be easily moved using casters, for example, in response to changes in the location of the automated assembly device 800 or changes in the IPM to be assembled.

[0068] The workbench 830 is disposed movably near the robot arm 820 and the transport path 810, and a storage case 832 on the workbench holds a plurality of power semiconductor modules 130 prepared in advance to be automatically mounted on the heat dissipation device 110 by the robot arm 820. The storage case 832 can also be configured to automatically replenish the plurality of power semiconductor modules 130.

[0069] According to the automated assembly apparatus 800 applicable to the manufacture of the IPM 101 according to the first embodiment, first, the first and second arm units 822 and 824 of the robot arm 820 are moved toward the work table 830, and when the working unit 826 is positioned above the work table 830, for example, one power semiconductor module 130 is removed by the suction device 828 from inside the storage case 832. Then, the removed one power semiconductor module 130 is carried to a predetermined mounting position on the transfer path 810 in accordance with the operation of the robot arm 820.

[0070] Meanwhile, a plurality of heat dissipation devices 110 are being transported and moved on the transport path 810, and when one unmounted heat dissipation device 110 reaches a predetermined mounting position on the transport path 810, for example at a first timing, the robot arm 820 automatically mounts the first power semiconductor module 130 into the first opening 1241 of the mounting frame 120.

[0071] Similarly, when one heat dissipation device 110 reaches a predetermined mounting position on the conveying path 810, for example at a second timing, the second power semiconductor module 130 is automatically mounted in the second opening 1242 of the mounting frame 120, and further, for example at a third timing, the third power semiconductor module 130 is automatically mounted in the third opening 1243 of the mounting frame 120.

[0072] In this way, the power semiconductor modules 130 are automatically mounted in the respective openings 1241 , 1242 , and 1243 based on the mounting frame 120 by using the robot arm 820 .

[0073] The timing and order of mounting the power semiconductor modules 130 are not limited to those described above. For example, the mounting may be performed while the transportation of the heat dissipation device 110 is stopped.

[0074] The heat dissipation device 110 in this mounted state with all three power semiconductor modules 130 thus mounted is further transported on the transport path 810 and sent to the next process, for example, a process of mounting the heat insulating sheet 150.

[0075] In the assembly process of the IPM 101 according to the first embodiment, at least the mounting of the power semiconductor module 130 onto the heat dissipation device 110 is automated, which allows for mass production and cost reduction.

[0076] The automation of assembly is not limited to the step of mounting the power semiconductor module 130, but may also include, for example, one or more of the steps of forming the thermally conductive resin layer 210T on the mounting surface 110a of the heat dissipation device 110, placing the mounting frame 120 on the mounting surface 110a, placing the heat insulating sheet 150 on the package 132 of the power semiconductor module 130, placing the presser plate 160S on the heat insulating sheet 150, placing the heat dissipation sheet 170 on the presser plate 160S, or mounting the drive circuit unit 180 on the heat dissipation sheet 170. Alternatively, it may also be the step of attaching the fixtures 190-192.

[0077] That is, the method for assembling the IPM 101 according to the first embodiment includes an automated assembly device 800, and at least one of the steps is performed using the automated assembly device 800.

[0078] Furthermore, the automatic assembly device 800 includes a robot arm 820, and among the steps, at least the step of mounting the power semiconductor module 130 on the mounting frame 120 is performed using the robot arm 820.

[0079] With the above-described configuration, the IPM 101 according to the first embodiment has excellent heat dissipation characteristics, is easily modularized, and is suitable for miniaturization.

[0080] That is, according to the IPM 101 of the first embodiment, the power semiconductor module 130 is mounted on the heat dissipation device 110 having a structure as a water-cooled cooler, so that excellent heat dissipation characteristics can be ensured.

[0081] Furthermore, by placing a pressure plate 160S having spring properties on the power semiconductor module 130, even when a thermally conductive resin layer 210T is used to join the power semiconductor module 130, it is possible to prevent the power semiconductor module 130 from shifting in position, thereby improving the reduction in yield of the IPM 101.

[0082] Moreover, by arranging the mounting frame 120 on the mounting surface 110a of the heat dissipation device 110, it becomes possible to mount the power semiconductor module 130 with high precision, and the reliability of the IPM 101 can be improved.

[0083] Furthermore, by using the mounting frame 120 arranged on the mounting surface 110a of the heat dissipation device 110 as a guide to mount the power semiconductor module 130, it becomes possible to automate the mounting of the power semiconductor module 130, thereby improving the productivity of the IPM 101, such as mass production and cost reduction.

[0084] Furthermore, when the IPM according to the first embodiment is used in a vehicle, for example, it becomes possible to develop a highly efficient system that not only has high performance and functionality but also ensures greater safety.

[0085] [Second embodiment] An IPM 201 according to the second embodiment has almost the same structure as the IPM 101 according to the first embodiment (see FIG. 1). Specifically, the IPM 201 according to the second embodiment uses a solder layer 210S having solder as a joining member, and replaces the presser plate 160S with a heat sink 160A. Because the structure is otherwise the same as that of the IPM 101 according to the first embodiment, the same parts are denoted by the same reference numerals and detailed description thereof will be omitted.

[0086] A schematic exploded bird's-eye view of an IPM 201 according to the second embodiment is shown in FIGS. 9(a) to 9(g).

[0087] That is, in the IPM 201 according to the second embodiment, each power semiconductor module 130 is mounted on the mounting surface 110a of the heat dissipation device 110. n The joining members 210S join the power semiconductor modules 130 together. n The solder is provided to fix the solder onto the mounting surface 110a.

[0088] Furthermore, on the heat insulating sheet 150, a metal thin plate having heat dissipation properties is provided between the drive circuit unit 180 and each power semiconductor module 130 fixed by a solder layer 210S. n The device further includes a heat sink 160A and a heat sink sheet 170 for dissipating the heat generated by the device.

[0089] Here, an assembly method for manufacturing the IPM 201 according to the second embodiment will be described with reference to FIGS. 9(a) to 9(g).

[0090] First, as shown in FIG. 9(g), a heat dissipation device 110 in which a solder layer 210S is formed on the mounting surface 110a of the heat dissipation portion 112 is prepared.

[0091] Then, as in the case of the IPM 101 according to the first embodiment, the steps of arranging the mounting frame 120 (f), joining the power semiconductor module 130 (e), and attaching the heat insulating sheet 150 (d) are carried out, and then the heat sink 160A is attached and fixed onto the heat insulating sheet 150 as shown in FIG. 9(c).

[0092] Here, a solder layer 210S is provided on the mounting surface 110a of the heat dissipation device 110, and when the power semiconductor modules 130 are joined via the solder layer 210S, each of the mounted power semiconductor modules 130 nTherefore, the pressing plate 160S having a spring property is not necessary, and the heat dissipation plate 160A having a thin metal plate with high heat dissipation properties, such as Al, is placed on the heat insulating sheet 150.

[0093] After this, similar to the case of the IPM 101 according to the first embodiment, various processes such as attaching the heat dissipation sheet 170 (b) and mounting the drive circuit section 180 (a) are carried out, and the IPM 201 according to the second embodiment is completed.

[0094] That is, the method of assembling the IPM 201 according to the second embodiment includes the steps of placing the mounting frame 120 on the mounting surface 110a on the heat dissipation device 110, mounting the power semiconductor module 130 in which the semiconductor device is sealed based on the mounting frame 120, and mounting the drive circuit unit 180 that drives the power semiconductor module 130 on the power semiconductor module 130 via the heat insulating sheet 150.

[0095] The method further includes the steps of forming a solder layer 210S on the mounting surface 110a to fix the power semiconductor module 130, arranging a heat sink 160A on the insulating sheet 150 to dissipate heat generated by the power semiconductor module 130 fixed by the solder layer 210S, and arranging a heat sink 170 on the heat sink 160A.

[0096] Thus, the IPM 201 according to the second embodiment, like the IPM 101, has excellent heat dissipation characteristics, is easily modularized, and is suitable for miniaturization.

[0097] Also, like the IPM 101, the IPM 201 allows for improved reliability and productivity.

[0098] Furthermore, in the manufacturing process of the IPM 201, at least the mounting of the power semiconductor module 130 onto the heat dissipation device 110 can be automated using an automatic assembly device 800 (see FIG. 8) equipped with a robot arm 820, etc., thereby enabling mass production and cost reduction.

[0099] That is, the method for assembling the IPM 201 according to the second embodiment includes an automated assembly device 800, and at least one of the steps is performed using the automated assembly device 800.

[0100] Furthermore, the automatic assembly device 800 includes a robot arm 820, and among the steps, at least the step of mounting the power semiconductor module 130 on the mounting frame 120 is performed using the robot arm 820.

[0101] In the IPM 201 according to the second embodiment, the heat dissipation plate 160A and the heat dissipation sheet 170 are not essential components and may be omitted.

[0102] That is, the IPM 201 according to the second embodiment includes a heat dissipation device 110, a mounting frame 120 disposed on a mounting surface 110a of the heat dissipation device 110, and power semiconductor modules 130 (each power semiconductor module 130) mounted on the mounting frame 120 and sealing a semiconductor device. n ) and a drive circuit section 180 that is mounted on the power semiconductor module 130 via a heat insulating sheet 150 and drives the power semiconductor module 130.

[0103] Furthermore, when the IPM according to the second embodiment is used in a vehicle, for example, it becomes possible to develop a highly efficient system that not only has high performance and functionality but also ensures greater safety.

[0104] [Third embodiment] (Outline of intelligent power module configuration) The planar structure of an IPM 301 according to the third embodiment is shown in Fig. 10. Note that Fig. 10 shows a part of the drive circuit section 180 and the like in a see-through manner.

[0105] Moreover, the cross-sectional structure taken along line XI-XI in Fig. 10 is shown in Fig. 11, and the cross-sectional structure taken along line XII-XII in Fig. 10 is shown in Fig. 12. Moreover, the schematic exploded bird's-eye view configuration of an IPM301 according to the third embodiment is shown in Figs. 13(a) to 13(g).

[0106] In the IPM 301 according to the third embodiment, The same parts as those in IPM 101 are denoted by the same reference numerals, and detailed description thereof will be omitted (see FIG. 1). Specifically, as shown in FIGS. 13(a) and 13(g), an IPM 301 according to the third embodiment includes, as a heat dissipation device, a heat sink (for example, a heat sink (cooling plate) such as an Al heat sink) 310 and a cooler 312 such as a water jacket (WJ) attached to the heat sink 310, but otherwise has substantially the same structure as the IPM 101 according to the first embodiment.

[0107] That is, the IPM 301 according to the third embodiment includes a heat dissipation device (heat dissipation plate 310+cooler 312), a mounting frame 120 disposed on a mounting surface 310a of the heat dissipation plate 310, and power semiconductor modules 130 (each power semiconductor module 130) mounted on the mounting frame 120 and sealing semiconductor devices. n ) and a drive circuit section 180 that is mounted on the power semiconductor module 130 via a heat insulating sheet 150 and drives the power semiconductor module 130.

[0108] Here, the cooler 312 that can be attached to the non-attachment surface (rear surface) of the heat sink 310 includes a plurality of cooling paths 325 separated by a plurality of cooling walls 322 inside, as shown in FIGS. 10 to 12. The plurality of cooling paths 325 are arranged in parallel along the longitudinal direction of the cooler 312. The cooler 312 cools each of the power semiconductor modules 130 by passing cooling water through the cooling paths 325. n Cooler 312 is provided with an inlet 316 at one end for taking in cooling water into cooling path 325, and an outlet 318 at the other end for discharging the cooling water that has passed through cooling path 325.

[0109] The heat sink 310 has fixing portions 320 at both ends 314 in one direction for fixing the heat insulating sheet 150 and the presser plate 160S with fixing devices 190 such as screws. n The surface 310a is provided with a thermally conductive resin layer (bonding member) 210T.

[0110] That is, in the IPM 301 according to the third embodiment, each power semiconductor module 130 is mounted on a mounting surface 310a of a heat sink 310. n The joining member 210T joins each power semiconductor module 130 n The heat sink 310 is provided with a thermally conductive resin that holds the heat sink 310 on the mounting surface 310a.

[0111] Furthermore, on the heat insulating sheet 150, a metal thin plate having spring properties is provided between the drive circuit unit 180 and each power semiconductor module 130 held by a thermally conductive resin 210T. n The device further includes a pressure plate (160S) for restricting the movement of the device, and a heat dissipation sheet (170).

[0112] Furthermore, the method of assembling IPM301 according to the third embodiment includes the steps of placing mounting frame 120 on mounting surface 310a on heat sink 310, mounting power semiconductor module 130, in which semiconductor devices are encapsulated, based on mounting frame 120, and mounting drive circuit unit 180, which drives power semiconductor module 130, on power semiconductor module 130 via heat insulating sheet 150.

[0113] The method further includes the steps of forming a thermally conductive resin layer 210T on the mounting surface 310a to hold the power semiconductor module 130, placing a pressure plate 160S on the heat insulating sheet 150 to restrict movement of the power semiconductor module 130 held by the thermally conductive resin layer 210T, and placing a heat dissipation sheet 170 on the pressure plate 160S.

[0114] Thus, similar to the IPM 101, the IPM 301 according to the third embodiment also has excellent heat dissipation characteristics, is easily modularized, and is suitable for miniaturization.

[0115] Also, like the IPM101, the IPM301 allows for improved reliability and productivity.

[0116] Furthermore, in the assembly process of IPM301, at least the mounting of power semiconductor module 130 onto heat sink 310 can be automated using automatic assembly equipment 800 (see FIG. 8) equipped with robot arm 820, etc., thereby enabling mass production and cost reduction.

[0117] That is, the method for assembling an IPM 301 according to the third embodiment includes an automated assembly device 800, and at least one of the steps is performed using the automated assembly device 800.

[0118] Furthermore, the automatic assembly device 800 includes a robot arm 820, and among the steps, at least the step of mounting the power semiconductor module 130 on the mounting frame 120 is performed using the robot arm 820.

[0119] Note that IPM 301 according to the third embodiment can be applied not only to IPM 101 according to the first embodiment but also to IPM 201 according to the second embodiment. That is, IPM 301 may be configured so that power semiconductor module 130 is fixed to mounting surface 310a of heat sink 310 by solder layer (joint member) 210S, and in that case, heat sink 160A and heat dissipation sheet 170 may be omitted.

[0120] Furthermore, when the IPM according to the third embodiment is used in a vehicle, for example, it becomes possible to develop a highly efficient system that not only has high performance and high functionality but also ensures greater safety.

[0121] [Modification of the third embodiment] (Outline of intelligent power module configuration) The planar structure of an IPM 303 according to a modification of the third embodiment is shown in Fig. 14. Note that Fig. 14 shows a part of the drive circuit section 180 and the like in a see-through manner.

[0122] Moreover, the cross-sectional structure taken along line XV-XV in Fig. 14 is shown in Fig. 15, and the cross-sectional structure taken along line XVI-XVI in Fig. 14 is shown in Fig. 16. Moreover, the schematic exploded bird's-eye view configuration of an IPM 303 according to a modification of the third embodiment is shown in Figs. 17(a) to 17(g).

[0123] In IPM303 according to the modification of the third embodiment, the same components as those in IPM301 according to the third embodiment are denoted by the same reference numerals, and detailed description thereof will be omitted (see FIG. 10). Specifically, as shown in FIG. 17(g), IPM303 according to the modification of the third embodiment includes, as a heat dissipation device, a heat sink (for example, a heat sink (cooling plate) such as an Al heat sink) 310 and a heat sink 330 attached to heat sink 310, but otherwise has substantially the same structure as IPM301 according to the third embodiment.

[0124] Here, heat sink 330 that can be attached to the non-attachment surface (rear surface) of heat sink 310 includes a plurality of cooling fins (heat dissipation fins or flat plate fins) 330F, as shown in FIGS.

[0125] That is, the IPM 303 according to the modification of the third embodiment includes a heat dissipation device (heat sink 310+heat sink 330), a mounting frame 120 disposed on a mounting surface 310a of the heat sink 310, and power semiconductor modules 130 (each power semiconductor module 130) mounted on the mounting frame 120 and sealing a semiconductor device. n ) and a drive circuit section 180 that is mounted on the power semiconductor module 130 via a heat insulating sheet 150 and drives the power semiconductor module 130.

[0126] In addition, in the IPM 303 according to the modification of the third embodiment, the mounting surface 310a of the heat sink 310 is provided with the respective power semiconductor modules 130. n The joining member 210T joins each power semiconductor module 130 n The heat sink 310 is provided with a thermally conductive resin that holds the heat sink 310 on the mounting surface 310a.

[0127] Furthermore, on the heat insulating sheet 150, a metal thin plate having spring properties is provided between the drive circuit unit 180 and each power semiconductor module 130 held by a thermally conductive resin 210T. n The device further includes a pressure plate (160S) for restricting the movement of the device, and a heat dissipation sheet (170).

[0128] Furthermore, an assembly method for IPM 303 according to a modified example of the third embodiment includes the steps of placing mounting frame 120 on mounting surface 310a on heat sink 310, mounting power semiconductor module 130, in which semiconductor devices are encapsulated, based on mounting frame 120, and mounting drive circuit unit 180, which drives power semiconductor module 130, on power semiconductor module 130 via heat insulating sheet 150.

[0129] The method further includes the steps of forming a thermally conductive resin layer 210T on the mounting surface 310a to hold the power semiconductor module 130, placing a pressure plate 160S on the heat insulating sheet 150 to restrict movement of the power semiconductor module 130 held by the thermally conductive resin layer 210T, and placing a heat dissipation sheet 170 on the pressure plate 160S.

[0130] Thus, the IPM 303 according to the modification of the third embodiment also has excellent heat dissipation characteristics, is easily modularized, and is suitable for miniaturization, similar to the IPM 301.

[0131] Also, like the IPM301, the IPM303 allows for improved reliability and productivity.

[0132] In addition, in the manufacturing process of IPM303, at least the mounting of power semiconductor module 130 onto heat sink 310 can be automated using automatic assembly equipment 800 (see Figure 8) equipped with robot arm 820, etc., thereby enabling mass production and cost reduction.

[0133] That is, the method for assembling IPM 303 according to the modification of the third embodiment includes an automated assembly device 800, and at least one of the steps is performed using the automated assembly device 800.

[0134] Furthermore, the automatic assembly device 800 includes a robot arm 820, and among the steps, at least the step of mounting the power semiconductor module 130 on the mounting frame 120 is performed using the robot arm 820.

[0135] In the IPM 303 according to the modification of the third embodiment, the heat sink 330 is not limited to a cooling fin, and may be provided with a plurality of cooling pins (heat sink pins) 330P as shown in FIG.

[0136] Of course, the IPM 303 may be configured to fix the power semiconductor module 130 to the mounting surface 310a on the heat sink 310 using a solder layer (bonding material) 210S, and if the solder layer 210S is used, the heat sink 160A and the heat sink sheet 170 may be omitted.

[0137] Furthermore, when the IPM according to the modified example of the third embodiment is used, for example, in a vehicle, it becomes possible to develop a highly efficient system while ensuring higher performance and functionality, as well as greater safety.

[0138] (Application example 1) Next, an application example will be described using the IPM 101 according to the first embodiment as an example.

[0139] FIG. 19 illustrates an example in which the IPM 101 according to the first embodiment is mounted in, for example, a power control unit of an electric vehicle or a hybrid car, and the drive circuit section 180 is composed of a primary side circuit section 180A and a secondary side circuit section 180B.

[0140] The primary circuit section 180A includes a primary coil (L1) of an isolation transformer 181 (1811, 1812, 1813, 1814, 1815, and 1816), a switch regulator 182, an LDO (Low Drop Out) 183, a temperature monitor circuit 184, a short-circuit protection circuit 185, a voltage drop detection circuit 186, and the light-receiving side of isolation couplers (photocouplers) 187 (1871, 1872, 1873, 1874, 1875, and 1876). The primary coil (L1) of the isolation transformer 181 is commonly connected to the switch regulator 182, and the switch regulator 182 and the LDO 183 are connected to, for example, the battery 64 of an electric vehicle or hybrid car. The light-receiving side of the isolation coupler 187 is commonly connected to the temperature monitor circuit 184, the short-circuit protection circuit 185, and the voltage drop detection circuit 186.

[0141] The secondary side circuit section 180B is provided with a secondary coil (L2) of the isolation transformer 181, a gate driver 188, and the light emitting section side of the isolation coupler 187. The secondary coil (L2) of the isolation transformer 181 is commonly connected to the gate driver 188, the temperature monitor circuit 184, the short circuit protection circuit 185, and the voltage drop detection circuit 186. The light emitting section side of the isolation coupler 187 is connected to the gate driver 188.

[0142] The gate driver 188 and the temperature monitor circuit 184 are connected to the LDO 183 and the power semiconductor module 130 (each power semiconductor module 130 n ) The gate driver 188, the temperature monitor circuit 184, the short circuit protection circuit 185, and the voltage drop detection circuit 186 are connected to an ECU (Engine Control Unit) 62 of the electric vehicle or hybrid car.

[0143] The gate driver 188 has a plurality of high-voltage side drive circuits HS1, HS2, and HS3 and a plurality of low-voltage side drive circuits LS4, LS5, and LS6, and receives positive and negative power supplies from a power supply circuit described later.

[0144] The planar pattern configuration (substrate configuration) of the drive circuit section 180 having such a configuration is shown in Figures 20(a) and 20(b). Figure 20(a) is a schematic diagram showing the planar pattern configuration of the front side (upper surface) 180S of the drive circuit section 180, and Figure 20(b) is a schematic diagram showing the planar pattern configuration of the back side (lower surface) 180R in a state where the planar pattern configuration of the front side 180S is transparent.

[0145] That is, each power semiconductor module 130 applicable to the IPM 101 according to the first embodiment n The drive circuit unit 180 mounted on the top of the power semiconductor modules 130, for example, n The drive circuit section 180 has a rectangular shape and includes a primary circuit section 180A arranged along the longitudinal direction, and a secondary circuit section 180B arranged adjacent to the primary circuit section 180A.

[0146] A power supply circuit including the above-described switch regulator 182 and LDO 183 is configured on a front side 180S of the primary side circuit section 180A. A temperature monitor circuit 184, a short-circuit protection circuit 185, a voltage drop detection circuit 186, and the like are arranged on a back side 180R.

[0147] In the secondary circuit section 180B, a plurality of high-voltage side drive circuits HS1, HS2, HS3 and a plurality of low-voltage side drive circuits LS4, LS5, LS6 of the gate driver 188 are alternately arranged.

[0148] The drive circuits HS1, HS2, HS3, LS4, LS5, and LS6 of the secondary circuit section 180B are commonly connected to a power supply circuit on a front side 180S of the primary circuit section 180A via isolation transformers 1811 to 1816 arranged across the primary circuit section 180A and the secondary circuit section 180B. The drive circuits HS1, HS2, HS3, LS4, LS5, and LS6 are commonly connected to a temperature monitor circuit 184, a short-circuit protection circuit 185, and a voltage drop detection circuit 186 on a back side 180R of the primary circuit section 180A via isolation couplers 1871 to 1876 arranged across the primary circuit section 180A and the secondary circuit section 180B.

[0149] Here, a schematic configuration of a three-phase AC inverter 101A configured to apply the IPM 101 according to the first embodiment and for driving a three-phase AC motor unit (not shown) of, for example, an electric vehicle or a hybrid car will be described. This three-phase AC inverter 101A is an example in which SiC MOSFETs (Silicon Carbide Metal Oxide Semiconductor Field Effect Transistors) are applied to the semiconductor devices Q1 to Q6.

[0150] As shown in FIG. 21, three-phase AC inverter 101A is connected to a U-phase inverter (SiC MOSFETs Q1 and Q4), a V-phase inverter (SiC MOSFETs Q2 and Q5), and a W-phase inverter (SiC MOSFETs Q3 and Q6) corresponding to the U-phase, V-phase, and W-phase of the three-phase AC motor section.

[0151] The U-phase inverter's SiC MOSFET Q1 is connected to a high-voltage side drive circuit HS1, and the U-phase inverter's SiC MOSFET Q4 is connected to a low-voltage side drive circuit LS4. Similarly, the V-phase inverter's SiC MOSFET Q2 is connected to a high-voltage side drive circuit HS2, and the V-phase inverter's SiC MOSFET Q5 is connected to a low-voltage side drive circuit LS5. Similarly, the W-phase inverter's SiC MOSFET Q3 is connected to a high-voltage side drive circuit HS3, and the W-phase inverter's SiC MOSFET Q6 is connected to a low-voltage side drive circuit LS6.

[0152] Three-phase AC inverter 101B shown in Fig. 22 shows in more detail the circuit configuration of three-phase AC inverter 101A shown in Fig. 21, and SiC MOSFETs Q1 to Q6 have body diodes BD1 to BD6, respectively. In addition, freewheeling diodes DI1 to DI6 are connected in anti-parallel between the sources and drains of SiC MOSFETs Q1 to Q6, respectively.

[0153] In place of the freewheeling diodes DI1 to DI6, for example, Schottky barrier diodes may be connected in antiparallel to each other.

[0154] (Circuit configuration) Next, a more specific description will be given of an example of the circuit configuration of the power semiconductor module 130 applicable to the IPM 101 according to the first embodiment.

[0155] Here, a power semiconductor module 1301 applicable to the IPM 101 according to the first embodiment will be described, which is a semiconductor package device in which two semiconductor devices Q1 and Q4 are molded in one package 132, a so-called 2-in-1 type module.

[0156] The circuit configuration of a 2-in-1 module 130A employing SiC MOSFETs as the semiconductor devices Q1 and Q4 is shown, for example, in FIG. 23(a).

[0157] That is, as shown in FIG. 23(a), the 2-in-1 module 130A has a configuration of a half-bridge built-in module in which two SiC MOSFETs Q1 and Q4 are built in as one module.

[0158] Here, a module can be considered as one large transistor, but the built-in transistor may be one chip or multiple chips. That is, modules are classified as 1 in 1, 2 in 1, 4 in 1, 6 in 1, etc. For example, a module with two built-in transistors (chips) on one module is called 2 in 1, a module with two built-in 2 in 1s is called 4 in 1, and a module with three built-in 2 in 1s is called 6 in 1.

[0159] As shown in Fig. 23(a), a 2-in-1 module 130A incorporates two SiC MOSFETs Q1 and Q4 and diodes DI1 and DI4 connected in anti-parallel to the SiC MOSFETs Q1 and Q4 as a single module. In Fig. 23(a), G1 is a lead terminal for a gate signal of the SiC MOSFET Q1, and S1 is a lead terminal for a source signal of the SiC MOSFET Q1. Similarly, G4 is a lead terminal for a gate signal of the SiC MOSFET Q4, and S4 is a lead terminal for a source signal of the SiC MOSFET Q4. Furthermore, P is a positive power supply input terminal electrode, N is a negative power supply input terminal electrode, and O is an output terminal electrode.

[0160] Moreover, the circuit configuration of a 2-in-1 module 130B, which is a power semiconductor module 1301 applicable to the IPM 101 according to the first embodiment and which uses IGBTs (Insulated Gate Bipolar Transistors) as the semiconductor devices Q1 and Q4, is expressed as shown in FIG. 23(b).

[0161] As shown in FIG. 23(b), the 2-in-1 module 130B incorporates two IGBTs Q1 and Q4 and diodes DI1 and DI4 connected in anti-parallel to the IGBTs Q1 and Q4 as a single module. In FIG. 23(b), G1 is a lead terminal for the gate signal of the IGBT Q1, and E1 is a lead terminal for the emitter signal of the IGBT Q1. Similarly, G4 is a lead terminal for the gate signal of the IGBT Q4, and E4 is a lead terminal for the emitter signal of the IGBT Q4. Furthermore, P is a positive power supply input terminal electrode, N is a negative power supply input terminal electrode, and O is an output terminal electrode.

[0162] The same applies to the semiconductor devices Q2 and Q5 applied to the power semiconductor module 1302 applicable to the IPM 101 according to the first embodiment, and the semiconductor devices Q3 and Q6 applied to the power semiconductor module 1303, and detailed description thereof will be omitted.

[0163] (Device structure) In the device structure of the power semiconductor module 1301 applicable to the IPM 101 according to the first embodiment, the schematic cross-sectional structure of the SiC MOSFET 130A applied as the semiconductor devices Q1 and Q4 is shown in FIG. 24(a), and the schematic cross-sectional structure of the IGBT 130B is shown in FIG. 24(b).

[0164] As shown in FIG. 24( a), the SiC MOSFET 130A includes a semiconductor substrate 31 made of an n- high resistance layer, a p-body region 32 formed on the front surface side of the semiconductor substrate 31, a source region 33 formed on the front surface of the p-body region 32, a gate insulating film 34 arranged on the front surface of the semiconductor substrate 31 between the p-body regions 32, a gate electrode 35 arranged on the gate insulating film 34, a source electrode 36 connected to the source region 33 and the p-body region 32, an n- drain region 37 arranged on the back surface opposite to the front surface of the semiconductor substrate 31, and a drain electrode 38 connected to the n- drain region 37.

[0165] In FIG. 24(a), the SiC MOSFET 130A is configured as a planar gate n-channel vertical SiC MOSFET, but as shown in FIG. 28 described later, it may be configured as a trench gate n-channel vertical SiC T (Trench) MOSFET 130C or the like.

[0166] Alternatively, as the semiconductor devices Q1 and Q4 applied to the power semiconductor module 1301 applicable to the IPM 101 according to the first embodiment, GaN-based FETs or the like can be adopted instead of the SiC MOSFET 130A.

[0167] The same applies to the semiconductor devices Q2 and Q5 applied to the power semiconductor module 1302 and the semiconductor devices Q3 and Q6 applied to the power semiconductor module 1303 that are applicable to the IPM 101 according to the first embodiment.

[0168] Furthermore, for the semiconductor devices Q1 to Q6 used in the power semiconductor module 130 applicable to the IPM 101 according to the first embodiment, a semiconductor having a bandgap energy of, for example, 1.1 eV to 8 eV can be used.

[0169] Similarly, as shown in FIG. 24( b), an IGBT 130B that is applicable to the IPM 101 according to the first embodiment and that is used as the semiconductor devices Q1 and Q4 includes a semiconductor substrate 31 made of an n- high-resistance layer, p-body regions 32 formed on the front surface side of the semiconductor substrate 31, emitter regions 33E formed on the front surface of the p-body regions 32, a gate insulating film 34 disposed on the front surface of the semiconductor substrate 31 between the p-body regions 32, a gate electrode 35 disposed on the gate insulating film 34, an emitter electrode 36E connected to the emitter region 33E and the p-body region 32, p-type collector regions 37P disposed on the rear surface opposite to the front surface of the semiconductor substrate 31, and a collector electrode 38C connected to the p-type collector region 37P.

[0170] In FIG. 24(b), the IGBT 130B is configured as a planar gate n-channel vertical IGBT, but may also be configured as a trench gate n-channel vertical IGBT or the like.

[0171] FIG. 25 shows a schematic cross-sectional structure of a SiC MOSFET 130A including a source pad electrode SP and a gate pad electrode GP, which is an example of semiconductor devices Q1-Q4 that can be used in a power semiconductor module 1301 that can be applied to the IPM 101 according to the first embodiment.

[0172] The gate pad electrode GP is connected to a gate electrode 35 arranged on a gate insulating film 34, and the source pad electrode SP is connected to a source electrode 36 connected to the source region 33 and the p-body region 32. Furthermore, the gate pad electrode GP and the source pad electrode SP are arranged on an interlayer insulating film 39 for passivation that covers the surface of the SiC MOSFET 130A, as shown in FIG.

[0173] Although not shown, a fine transistor structure may be formed in the semiconductor substrate 31 below the gate pad electrode GP and the source pad electrode SP, similar to the central portion of FIG. 24(a).

[0174] Furthermore, as shown in FIG. 26, in the central transistor structure as well, the source pad electrode SP may be arranged to extend on the interlayer insulating film 39 for passivation.

[0175] FIG. 26 shows a schematic cross-sectional structure of an IGBT 130B including an emitter pad electrode EP and a gate pad electrode GP, which is an example of semiconductor devices Q1-Q4 that can be applied to a power semiconductor module 1301 that can be applied to the IPM 101 according to the first embodiment.

[0176] The gate pad electrode GP is connected to a gate electrode 35 arranged on the gate insulating film 34, and the emitter pad electrode EP is connected to an emitter electrode 36E connected to the emitter region 33E and the p-body region 32. In addition, the gate pad electrode GP and the emitter pad electrode EP are arranged on an interlayer insulating film 39 for passivation that covers the surface of the IGBT 130B, as shown in FIG.

[0177] Although not shown, a microstructure IGBT structure may be formed in the semiconductor substrate 31 below the gate pad electrode GP and the emitter pad electrode EP, similar to the central portion of FIG. 24(b).

[0178] Furthermore, as shown in FIG. 26, in the IGBT structure in the central portion, the emitter pad electrode EP may be arranged to extend on the interlayer insulating film 39 for passivation.

[0179] The same applies to the semiconductor devices Q2 and Q5 applied to the power semiconductor module 1302 and the semiconductor devices Q3 and Q6 applied to the power semiconductor module 1303 that are applicable to the IPM 101 according to the first embodiment.

[0180] The semiconductor devices Q1 to Q6 may be SiC-based power devices such as SiC DI (Double Implanted) MOSFETs and SiC T MOSFETs, or GaN-based power devices such as GaN-based high electron mobility transistors (HEMTs).In some cases, power devices such as Si-based MOSFETs and IGBTs may also be used.

[0181] -SiC DI MOSFET- FIG. 27 shows a schematic cross-sectional structure of a SiC DI MOSFET 130D, which is an example of a semiconductor device that can be applied to the power semiconductor module 130 that can be applied to the IPM 101 according to the first embodiment.

[0182] As shown in FIG. 27 , a SiC DI MOSFET 130D used in a power semiconductor module 130 applicable to the IPM 101 according to the first embodiment includes a semiconductor substrate 31 made of an n− high-resistance layer, a p body region 32 formed on the front surface side of the semiconductor substrate 31, an n+ source region 33 formed on the front surface of the p body region 32, a gate insulating film 34 arranged on the front surface of the semiconductor substrate 31 between the p body regions 32, a gate electrode 35 arranged on the gate insulating film 34, a source electrode 36 connected to the source region 33 and the p body region 32, an n+ drain region 37 arranged on the back surface of the semiconductor substrate 31 opposite to the front surface, and a drain electrode 38 connected to the n+ drain region 37.

[0183] 27, in a SiC DI MOSFET 130D, a p-body region 32 and an n+ source region 33 formed on the surface of the p-body region 32 are formed by double ion implantation (DII), and a source pad electrode SP is connected to a source electrode 36 connected to the source region 33 and the p-body region 32.

[0184] Although not shown, the gate pad electrode GP is connected to the gate electrode 35 arranged on the gate insulating film 34. Furthermore, as shown in FIG. 27 , the source pad electrode SP and the gate pad electrode GP are arranged on an interlayer insulating film 39 for passivation so as to cover the surface of the SiC DI MOSFET 130D.

[0185] As shown in FIG. 27, in the SiC DI MOSFET, a depletion layer as shown by the dashed line is formed in the semiconductor substrate 31 made of the n-high resistance layer sandwiched between the p-body regions 32, and therefore the channel resistance R JFET Furthermore, a body diode BD is formed between p body region 32 and semiconductor substrate 31, as shown in FIG.

[0186] -SiC T MOSFET- FIG. 28 shows a schematic cross-sectional structure of a SiC T MOSFET, which is an example of a semiconductor device that can be applied to the power semiconductor module 130 that can be applied to the IPM 101 according to the first embodiment.

[0187] As shown in FIG. 28 , a SiC T MOSFET 130C used in a power semiconductor module 130 applicable to the IPM 101 according to the first embodiment includes a semiconductor substrate 31N made of an n layer, a p body region 32 formed on the front surface side of the semiconductor substrate 31N, an n+ source region 33 formed on the front surface of the p body region 32, a trench gate electrode 35TG formed in a trench extending through the p body region 32 to the semiconductor substrate 31N with a gate insulating film 34 and interlayer insulating films 39U and 39B interposed therebetween, a source electrode 36 connected to the source region 33 and the p body region 32, an n+ drain region 37 disposed on the back surface of the semiconductor substrate 31N opposite to the front surface, and a drain electrode 38 connected to the n+ drain region 37.

[0188] 28, in a SiC T MOSFET 130C, a trench gate electrode 35TG is formed in a trench that penetrates the p-body region 32 and reaches the semiconductor substrate 31N, with a gate insulating film 34 and interlayer insulating films 39U and 39B interposed therebetween, and a source pad electrode SP is connected to a source electrode 36 that is connected to the source region 33 and the p-body region 32.

[0189] Although not shown, the gate pad electrode GP is connected to a trench gate electrode 35TG arranged on the gate insulating film 34. Furthermore, as shown in FIG. 28, the source pad electrode SP and the gate pad electrode GP are arranged on an interlayer insulating film 39U for passivation so as to cover the surface of the SiC T MOSFET 130C.

[0190] The SiC T MOSFET 130C has a channel resistance R associated with the junction FET (JFET) effect, as in the SiC DI MOSFET 130D. JFETFurther, a body diode BD is formed between p body region 32 and semiconductor substrate 31N, similarly to FIG.

[0191] (Application example) An example of a circuit configuration of a three-phase AC inverter 40A configured using the IPM 101 according to the first embodiment, in which SiC MOSFETs are applied as semiconductor devices and a snubber capacitor C is connected between the power supply terminal PL and the ground terminal NL, is shown in FIG. 29(a).

[0192] Similarly, a circuit configuration example of a three-phase AC inverter 40B configured using the IPM 101 according to the first embodiment, in which IGBTs are applied as semiconductor devices and a snubber capacitor C is connected between the power supply terminal PL and the ground terminal NL, is expressed as shown in FIG. 29(b).

[0193] When the IPM 101 according to the first embodiment is connected to a power supply E, a large surge voltage Ldi / dt occurs due to the inductance L of the connection line, due to the fast switching speed of the SiC MOSFET or IGBT. For example, if the current change di=300 A and the time change dt due to switching=100 nsec, then di / dt=3×10 9 (A / s).

[0194] The value of surge voltage Ldi / dt changes depending on the value of inductance L, but this surge voltage Ldi / dt is superimposed on power supply E. This surge voltage Ldi / dt can be absorbed by snubber capacitor C connected between power supply terminal PL and ground terminal NL.

[0195] (Example) Next, with reference to FIG. 30, a three-phase AC inverter 42A that uses SiC MOSFETs as semiconductor devices and is configured using the IPM 101 according to the first embodiment will be described.

[0196] 30, three-phase AC inverter 42A includes an IPM 101 having a drive circuit unit 180, a three-phase AC motor unit 51, a power supply or storage battery (E) 53, and a converter 55. IPM 101 is connected to U-phase, V-phase, and W-phase inverters corresponding to the U-phase, V-phase, and W-phase of three-phase AC motor unit 51.

[0197] Here, the drive circuit section 180 is connected to SiC MOSFETs Q1 and Q4, SiC MOSFETs Q2 and Q5, and SiC MOSFETs Q3 and Q6.

[0198] IPM101 is connected between the positive terminal (+) P and negative terminal (-) N of converter 55, which is connected to power supply or storage battery (E) 53, and is equipped with SiC MOSFETs Q1-Q4, Q2-Q5, and Q3-Q6 in an inverter configuration. In addition, freewheeling diodes DI1-DI6 are connected in antiparallel between the sources and drains of SiC MOSFETs Q1-Q6, respectively.

[0199] Next, with reference to FIG. 31, a three-phase AC inverter 42B that uses IGBTs as semiconductor devices and is configured using the IPM 101 according to the first embodiment will be described.

[0200] 31, three-phase AC inverter 42B includes an IPM 101 having a drive circuit unit 180, a three-phase AC motor unit 51, a power supply or storage battery (E) 53, and a converter 55. IPM 101 is connected to U-phase, V-phase, and W-phase inverters corresponding to the U-phase, V-phase, and W-phase of three-phase AC motor unit 51.

[0201] Here, the drive circuit section 180 is connected to IGBTs Q1 and Q4, IGBTs Q2 and Q5, and IGBTs Q3 and Q6.

[0202] The IPM101 is connected between the positive terminal (+) P and the negative terminal (-) N of the converter 55 to which the storage battery (E) 53 is connected, and the IGBTs Q1, Q4, and Q In addition, freewheeling diodes DI1 to DI6 are connected in antiparallel between the emitters and collectors of IGBTs Q1 to Q6, respectively.

[0203] (Application example 2) Application example 2 illustrates another application example in which, for example, the IPM 101 according to the first embodiment is mounted in a power control unit of an electric vehicle or a hybrid car, and the circuit block configuration of the power control unit 60 is expressed as shown in FIG.

[0204] As shown in FIG. 32, an IPM 101 that can be mounted in a power control unit 60 of an electric vehicle or a hybrid car is configured as a three-phase AC inverter 60A that supplies three-phase drive current to a motor (not shown) that serves as an automobile engine, for example.

[0205] The three-phase AC inverter 60A is controlled by an ECU 62 that controls the driving of the motor in a power control unit 60 of an electric vehicle or a hybrid car.

[0206] In the above description of application examples and specific examples, the IPM 101 according to the first embodiment has been described as an example, but the present invention is not limited to this and can of course also be applied to other IPMs.

[0207] (Application example 3) Application example 3 illustrates, for example, the case where the IPM 101 according to the first embodiment is applied to a power control unit 60 of an electric vehicle, and the circuit block configuration of a cooling mechanism part 72 including a module cooling system 74 is expressed as shown in FIG.

[0208] As shown in FIG. 33, a cooling mechanism 72 applicable to a power control unit 60 of an electric vehicle is configured to cool, for example, an IPM 101 configured as a three-phase AC inverter that supplies three-phase drive current to a motor (not shown) that serves as an automobile engine, using a module cooling system 74.

[0209] In the cooling mechanism 72, the module cooling system 74 has a radiator 76 and a pump 78. The radiator 76 reduces the temperature of the cooling water, which has risen by absorbing heat from the IPM 101, to a certain temperature. The pump 78 repeatedly supplies the cooling water, which has been maintained at a constant temperature by the radiator 76, to the heat dissipation device 110 of the IPM 101.

[0210] The cooling mechanism 72 having such a configuration may be controlled by, for example, an ECU 62 that controls the driving of the motor in a power control unit 60 of an electric vehicle, or may be configured to always cool the IPM 101 regardless of the control of the ECU 62.

[0211] When cooling mechanism 72 is applied to power control unit 60 of a hybrid car equipped with an automobile engine separate from the motor, IPM 101 is not limited to being cooled by module cooling system 74, but may be cooled by hybrid cooling system 84 having engine radiator 86 and pump 88 that are installed for engine cooling, as shown in Fig. 34. In a hybrid car in which IPM 101 can be cooled by hybrid cooling system 84, it is of course possible to configure ECU 62 to switch between cooling by module cooling system 74 and cooling by hybrid cooling system 84, and it is also possible to omit installing module cooling system 74 in cooling mechanism 72.

[0212] The power control unit 60 for an electric vehicle or a hybrid car is not limited to the IPM 101, and any of the IPMs 201 to 301 (excluding the IPM 303) according to the above-described embodiments can also be applied.

[0213] As described above, according to this embodiment, an IPM with excellent heat dissipation characteristics, easy modularization, and suitable for miniaturization can be realized. Therefore, it is possible to efficiently cool multiple power semiconductor modules 130, and to prevent chips from being destroyed by overheating or wiring from being melted, thereby providing a more reliable electric vehicle or hybrid car.

[0214] That is, when the IPMs 101, 201, 301, and 303 according to the first to third embodiments are mounted on a vehicle, for example, it becomes possible to develop a highly efficient system that not only has high performance and functionality but also ensures greater safety.

[0215] In the present embodiment, the molded power module is not limited to the power semiconductor module 130 having a three-terminal structure including one each of terminal electrodes O, P, and N, but may also be, for example, a molded power module 600 having a four-terminal structure as shown in FIG. 35.

[0216] Here, in a molded power module 600 of a 2-in-1 type with a four-terminal structure using SiC MOSFETs, the planar configuration (external structure) after the package 602 is formed is shown in FIG. 35(a), and the planar pattern configuration (internal structure) before the package 602 is formed is shown in FIG. 35(b).

[0217] That is, as shown in Figures 35(a) and 35(b), the molded power module 600 has a half-bridge built-in module configuration with two built-in SiC MOSFETs Q1 and Q4. Figure 35(b) shows an example in which four SiC MOSFETs Q1 and Q4 are arranged in parallel. For example, it is possible to mount up to five SiC MOSFETs Q1 and Q4, and some of the five chips can also be used as diodes DI.

[0218] The molded power module 600 includes, for example, a positive power supply input terminal D1 (drain terminal electrode P) and a negative power supply input terminal S4 (ground potential terminal electrode N) arranged on a first side of a ceramic substrate 604 covered by a package 602, a gate signal lead terminal (gate signal terminal electrode) GT1 and a source sense signal lead terminal (source signal terminal electrode) SST1 arranged on a second side adjacent to the first side, output terminal electrodes S1(O) and D4(O) arranged on a third side opposite the first side, and a gate signal lead terminal GT4 and a source sense signal lead terminal SST4 arranged on a fourth side opposite the second side.

[0219] As shown in Figure 35(b), the lead terminal GT1 for the gate signal and the lead terminal SST1 for the source sense signal are connected to the gate signal electrode pattern GL1 and source signal electrode pattern SL1 of the SiC MOSFET Q1, and the lead terminal GT4 for the gate signal and the lead terminal SST4 for the source sense signal are connected to the gate signal electrode pattern GL4 and source signal electrode pattern SL4 of the SiC MOSFET Q4.

[0220] Gate wires GW1 and GW4 and source sense wires SSW1 and SSW4 are connected from the SiC MOSFETs Q1 and Q4 to the gate signal electrode patterns GL1 and GL4 and source signal electrode patterns SL1 and SL4 arranged on the signal substrates 6241 and 6244. In addition, gate signal lead terminals GT1 and GT4 and source sense signal lead terminals SST1 and SST4 for external extraction are connected by soldering or the like to the gate signal electrode patterns GL1 and GL4 and source signal electrode patterns SL1 and SL4.

[0221] The sources S1 and S4 of the four SiC MOSFETs Q1 and Q4 arranged in parallel are commonly connected by upper surface plate electrodes 6221 and 6224.

[0222] Although not shown, diodes may be connected in anti-parallel between the drain D1 and source S1 of the SiC MOSFETs Q1 and Q4 and between the drain D4 and source S4.

[0223] Furthermore, molded power modules applicable to the power semiconductor module of the IPM according to the present embodiment are not limited to SiC-based power devices (semiconductor devices), and GaN-based or Si-based power devices can also be employed.

[0224] Furthermore, the present invention is not limited to resin-molded power modules, but can also be applied to power modules (semiconductor package devices) packaged in a case-type package.

[0225] Furthermore, it goes without saying that the power module is not limited to one in which the built-in semiconductor device is composed of a single chip, and may include electronic components such as a diode D1 in addition to the semiconductor device (Q), as in the power module 700 shown in Figures 36(a) and 36(b).

[0226] In the power module 700, the planar configuration (external structure) after the package 702 is formed is shown in FIG. 36(a), and the circuit configuration is shown in FIG. 36(b).

[0227] [Other embodiments] Although several embodiments have been described above, the descriptions and drawings forming part of the disclosure are illustrative and should not be understood as limiting. From this disclosure, various alternative embodiments, examples, and operating techniques will become apparent to those skilled in the art.

[0228] As such, this embodiment includes various embodiments not described here. [Industrial Applicability]

[0229] The IPM of this embodiment can be used in various semiconductor module manufacturing technologies such as IGBT modules, diode modules, and MOS modules (Si, SiC, GaN), and can be applied to a wide range of application fields such as inverters for HEVs (Hybrid Electric Vehicles) / EVs (Electric Cars), and industrial inverters and converters. [Explanation of symbols]

[0230] 40A, 40B, 42A, 42B, 60A, 101A, 101B...3-phase AC inverter 60...Power control unit 62...ECU 64...Battery 72…Cooling mechanism section 74...Module cooling system 84...Hybrid cooling system 101, 201, 301, 303...IPM 110...Heat dissipation device 110a, 310a... Mounting surface 112...Heat radiation part 113...Cooling pipe 114...Base 115, 325...Cooling path 116, 316...Intake 117...Water injection section 118, 318...Discharge port 119...Drainage section 120...Mounting frame 122...Frame 1241, 1242, 1243, 152, 162...Openings 126…Fixed part 130(1301, 1302, 1303, 130 n )…Power semiconductor module 130A...Planar gate n-channel vertical SiC MOSFET 130B...Planar gate n-channel vertical IGBT 130C...Trench gate type n-channel vertical SiC T MOSFET 130D...SiC DI MOSFET 132...Package 134, 136, 138...Terminal electrode (O, P, N) 140...Lead terminal (SS, GS, S, T1, T2) 150...Insulation sheet 154, 164, 166, 174, 184...Through holes 160A, 310...heat sink 160S…Pressing plate 170...Heat dissipation sheet 180...Drive circuit section 180A…Primary side circuit section 180B…Secondary side circuit section 181 (1811, 1812, 1813, 1814, 1815, 1816)...Isolation transformer 182...Switch regulator 183...LDO 184...Temperature monitor circuit 185...Short circuit protection circuit 186...Voltage drop detection circuit 187 (1871, 1872, 1873, 1874, 1875, 1876)...Isolated coupler 188...Gate driver 190, 192... Fixtures 210T...Thermal conductive resin layer (bonding material) 210S...Solder layer (joint material) 312...Cooler 322…Cooling wall 330…Radiator 330F...Cooling fins 330P...Cooling pin 600, 700... Power module 800...Automatic assembly equipment 810...Transport path 820...Robot arm 822...First arm section 824...Second arm section 826...Work Unit 828...Adsorption device 830...Workbench 832...Storage case Q, Q1 to Q6...Semiconductor devices (SiC MOSFET, IGBT) BD1 to BD6: Body diodes DI1 to DI6 (freewheeling) diodes HS1, HS2, HS3, LS4, LS5, LS6...Drive circuit

Claims

1. A heat dissipation device; A resin molded power module, a resin frame having at least one opening; An intelligent power module comprising: the resin frame is disposed on a mounting surface of the heat dissipation device; the resin molded power module is joined to the mounting surface in the opening of the resin frame via a joining member applied to the mounting surface in the opening of the resin frame, using the resin frame as a guide member; the resin molded power module has terminal electrodes, The resin molded power module has the terminal electrodes: a first control terminal for controlling the first semiconductor device; a second control terminal for controlling the second semiconductor device; a first input terminal connected to the first semiconductor device; a second input terminal connected to the second semiconductor device; an output terminal connected to the first semiconductor device and the second semiconductor device; Equipped with The terminal electrodes and the resin frame are disposed spaced apart from each other.

2. a control circuit board disposed on the resin molded power module and driving the resin molded power module; a heat insulating sheet disposed between the resin molded power module and the control circuit board; 10. The intelligent power module of claim 1, comprising:

3. 3. The intelligent power module according to claim 2, further comprising a plurality of fixing portions for fixing the control circuit board on a resin frame periphery of the resin frame with fixing members.

4. The intelligent power module according to claim 3 , wherein at least one of the fixing portions is provided at each end of the resin frame in a lateral direction.

5. 2. The intelligent power module according to claim 1, wherein the heat dissipation device has a plurality of cooling paths separated by a plurality of cooling walls therein, the plurality of cooling paths being arranged in parallel along the longitudinal direction of the heat dissipation device.

6. The intelligent power module of claim 1 , wherein the heat dissipation device comprises a plurality of cooling pins.

7. The intelligent power module according to claim 1 , wherein the joining member is made of metal.

8. 5. The intelligent power module according to claim 2, wherein the heat dissipation device, the resin frame, and the control circuit board are arranged as an integral structure for a plurality of the resin molded power modules.

9. the first semiconductor device is any one of an IGBT, a Si-based MOSFET, a SiC-based MOSFET, and a GaN-based FET, 2. The intelligent power module according to claim 1, wherein the second semiconductor device is any one of an IGBT, a Si-based MOSFET, a SiC-based MOSFET, and a GaN-based FET.

10. 2. The intelligent power module of claim 1, wherein the first semiconductor device and the second semiconductor device are planar gate n-channel vertical SiC MOSFETs.

11. 2. The intelligent power module of claim 1, wherein the first semiconductor device and the second semiconductor device are trench-gate n-channel vertical SiC MOSFETs.

12. 2. The intelligent power module according to claim 1, wherein the first control terminal and the second control terminal extend in a direction opposite to a direction in which the resin frame is disposed within the region of the resin frame.

13. The intelligent power module according to claim 1 , wherein the first control terminal and the second control terminal do not extend from the resin frame in a plan view.

14. 2. The intelligent power module according to claim 1, wherein the opening in the resin frame is provided for each of the resin molded power modules.

15. The intelligent power module according to claim 1 , wherein the first input terminal, the second input terminal, and the output terminal extend beyond an upper surface of the resin frame.

16. The intelligent power module according to claim 1 , wherein the first input terminal, the second input terminal, and the output terminal extend in a lateral direction of the resin frame.

17. 2. The intelligent power module according to claim 1, wherein the output terminal extends in a direction opposite to a direction in which the first input terminal and the second input terminal extend.

18. 2. The intelligent power module according to claim 1, wherein the resin frame has a thickness thinner than that of the resin molded power module.

19. A heat dissipation device; A resin molded power module, a resin frame having at least one opening; Equipped with the resin frame is disposed on a mounting surface of the heat dissipation device; the resin molded power module is joined to the mounting surface in the opening of the resin frame via a joining member applied to the mounting surface in the opening of the resin frame, using the resin frame as a guide member; the resin molded power module has terminal electrodes, The resin molded power module has the terminal electrodes: a first control terminal for controlling the first semiconductor device; a second control terminal for controlling the second semiconductor device; a first input terminal connected to the first semiconductor device; a second input terminal connected to the second semiconductor device; an output terminal connected to the first semiconductor device and the second semiconductor device; It is equipped with The terminal electrode and the resin frame are disposed apart from each other, An inverter or converter configured by arranging a plurality of the resin molded power modules.

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