solar cell module

Abstract

To provide a solar cell module which can be increased in integration efficiency and can be improved in reliability.SOLUTION: A solar cell module 10a is a photoelectric conversion element including: a first electrode 22a; a second electrode 13a1 and a third electrode 13a2 which face the first electrode 22a and are spaced apart from each other in a direction horizontal to a surface of the first electrode 22a; and a perovskite layer 17a which is disposed between the first electrode 22a, the second electrode 13a1, and the third electrode 13a2. The first photoelectric conversion element including the first electrode 22a, the perovskite layer 17a, and the second electrode 13a1 and a second photoelectric conversion element including the first electrode 22a, the perovskite layer 17a, and the third electrode 13a2 have opposite polarities, and the perovskite layer 17a included in the first photoelectric conversion element and the perovskite layer 17a included in the second photoelectric conversion element are continuous.SELECTED DRAWING: Figure 1

Description

[Technical Field]

[0001] The present disclosure relates to solar cell modules. [Background technology]

[0002] Conventionally, solar cell modules have been formed with either a forward or reverse structure, and each cell must be provided with a scribe (P1 scribe) that electrically insulates the first electrode, an opening scribe (P2 scribe) for electrically connecting the first electrode and the opposing second electrode, and a scribe (P3 scribe) that electrically insulates the first electrode and the opposing second electrode. Such a solar cell module is disclosed, for example, in WO2021 / 181542 (Patent Document 1).

[0003] 11 is a cross-sectional view showing the basic configuration of a solar cell module 110 in which four adjacent cells having a normal structure as disclosed in Patent Document 1 are separated by P3 scribe lines 124a. Here, each cell is processed by laser scribing. Referring to FIG. 11, a conventional solar cell module 110 includes a TCO (transparent electrode) 113a formed on a substrate (base) 111a and separated by a P1 scribe 121a, an ETL (electron transport) layer 114a formed on the TCO 113a, a perovskite layer (photoelectric conversion layer) 117a formed on the ETL layer 114a, an HTL (hole transport) layer 119a formed on the perovskite layer 117a, and an upper electrode 122a formed on the HTL layer 119a, with four cells formed continuously in series in the horizontal direction, and current flowing in the order of upper electrode 122a-P2 scribe 123a-TCO 113a-perovskite layer 117a-upper electrode 122a, as shown by the arrows in the figure.

[0004] FIG. 12 is a cross-sectional view showing the structure of a perovskite solar cell module with a conventional multi-porous layered electrode (MPLE) structure formed by screen printing. Referring to Figure 12, a perovskite solar cell module 120 with a conventional MPLE structure formed using screen printing is basically similar in structure to that shown in Figure 11, and includes a TCO 113b formed on a substrate 111b and separated by a P1 scribe 121b, an ETL layer 114b formed on the TCO 113b, a perovskite layer 117b formed on the ETL layer 114b, an HTL layer 119b formed on the perovskite layer 117b, and an upper electrode 122b formed on the HTL layer 119b, with four cells formed continuously in series in the horizontal direction, and current flowing in the order of upper electrode 122b - P2 scribe 123b - TCO 113b - perovskite layer 117b - upper electrode 122b, as shown in Figure 12. [Prior art documents] [Patent documents]

[0005] [Patent Document 1] WO2021 / 181542 publication Summary of the Invention [Problem to be solved by the invention]

[0006] Conventional solar cell modules have been configured as described above. As shown on the left side of FIG. 11, conventionally, in an effective area 130a required to form one effective cell, a 50 μm width for each scribe (P1 scribe 121a), a P2 scribe 123a, and a P3 scribe 124a, plus a 50 μm width for maintaining the space between the scribes, totaling 250 μm, was required for an ineffective area 131a that does not contribute to power generation, resulting in significant integration loss. Furthermore, since the P2 scribe 123a serves as a contact point between the upper electrode 122a and the TCO 113a, current concentration can cause degradation, resulting in reduced reliability. Furthermore, degradation of the HTL layer 119a can also cause reduced reliability. Here, the P1 to P3 scribes 121a, 123a, and 124a were optically scribed using laser, resulting in high accuracy.

[0007] Furthermore, when a perovskite solar cell module with an MPLE structure is formed using screen printing, the positional accuracy of the ETL layer 114b, perovskite layer 117b, HTL layer 119b, and upper electrode 122b formed by screen printing is lower than the positional accuracy of laser scribing, which necessitates a larger space. Specifically, as shown on the left side of Figure 12, for an effective area 130b required to form one effective cell, the P1 scribe 121b is, for example, 50 μm. However, for example, the lateral width 132 of the area to the right of the P1 scribe 121b in the perovskite layer 117b is 200 μm, the lateral area 133 of the upper electrode 122b is 500 μm, and the area 134 between adjacent cells is 500 μm. Consequently, the combined ineffective area 131b is approximately 1250 μm.

[0008] The present disclosure has been made to solve the above-mentioned problems, and has an object to provide a solar cell module that can increase integration efficiency and improve reliability. [Means for solving the problem]

[0009] The solar cell module according to this disclosure includes a first electrode, second and third electrodes facing the first electrode and spaced apart in a direction horizontal to the surface of the first electrode, and a light absorbing layer disposed between the first electrode, the second electrode, and the third electrode. A first photoelectric conversion element including the first electrode, the light absorbing layer, and the second electrode and a second photoelectric conversion element including the first electrode, the light absorbing layer, and the third electrode have opposite polarities, and the light absorbing layer included in the first photoelectric conversion element and the light absorbing layer included in the second photoelectric conversion element are continuous.

[0010] Preferably, the first photoelectric conversion element includes a first ETL layer between the second electrode and the light absorbing layer, and the second photoelectric conversion element includes a second ETL layer between the first electrode and the light absorbing layer.

[0011] The first photoelectric conversion element may include a first HTL layer between the first electrode and the light absorption layer, and the second photoelectric conversion element may include a second HTL layer between the second electrode and the light absorption layer.

[0012] In another aspect of the present disclosure, a solar cell module includes a first electrode, second and third electrodes facing the first electrode and spaced apart in a direction horizontal to a surface of the first electrode, and a light absorbing layer disposed between the first electrode, the second electrode, and the third electrode. The first photoelectric conversion element including the first electrode, the light absorbing layer, and the second electrode includes at least one of a first charge transport layer capable of transporting first-type charges between the first electrode and the light absorbing layer or a second charge transport layer capable of transporting second-type charges between the second electrode and the light absorbing layer. The second photoelectric conversion element including the first electrode, the light absorbing layer, and the third electrode includes at least one of a third charge transport layer capable of transporting second-type charges between the first electrode and the light absorbing layer or a fourth charge transport layer capable of transporting first-type charges between the third electrode and the light absorbing layer. The first-type charges are electrons or holes, and the second-type charges are of an opposite type to the first-type charges. The light absorbing layer included in the first photoelectric conversion element and the light absorbing layer included in the second photoelectric conversion element are continuous.

[0013] The substrate may be disposed on the second surfaces of the second electrode and the third electrode opposite to the first surfaces facing the light absorbing layer, or the substrate may be disposed on the second surface side of the first electrode opposite to the first surface facing the light absorbing layer.

[0014] The light absorbing layer may be a perovskite layer.

[0015] The second electrode and the third electrode are preferably spaced apart by 50 μm or more. [Effects of the Invention]

[0016] According to the present disclosure, a first photoelectric conversion element and a second photoelectric conversion element are arranged apart in the horizontal direction, and the light absorption layers contained in each element are continuous but have opposite polarities, so that this combination can provide a solar cell module that can increase integration efficiency and improve reliability.

[0017] The above and other objects, features, and advantages of the present disclosure will become more apparent from the following detailed description of the embodiments, which proceeds with reference to the drawings. [Brief explanation of the drawings]

[0018] [Figure 1] FIG. 1 is a diagram showing a cross-sectional structure of a solar cell module according to an embodiment of the present disclosure, and is a diagram of a solar cell module with a planar multilayer structure formed by laser scribing (planar solar cell module). [Figure 2] FIG. 1 is a diagram showing the cross-sectional structure of a planar solar cell module formed by mechanical scribing. [Figure 3A] 10A and 10B are diagrams showing a state during the formation of a solar cell module with an MPLE structure by screen printing. [Figure 3B] FIG. 10 is a diagram showing the state of a solar cell module with an MPLE structure after it has been formed by screen printing. [Figure 4] FIG. 10 is a cross-sectional view of a solar cell module with an MPLE structure according to a fourth embodiment. [Figure 5A]FIG. 1 is a diagram showing the structure of an organic thin-film solar cell described in a web document. [Figure 5B] FIG. 5B is a diagram showing a cross-sectional structure of a solar cell module having a structure (for four cells) according to the present disclosure based on the organic thin-film solar cell 31 shown in FIG. 5A. [Figure 6] FIG. 13 is a cross-sectional view of a solar cell module 10g with an MPLE structure according to a sixth embodiment. [Figure 7] FIG. 13 is a cross-sectional view of a solar cell module 10h with an MPLE structure according to a seventh embodiment. [Figure 8A] FIG. 2 is a diagram showing the solar cell module shown in FIG. 1 according to the first embodiment. [Figure 8B] FIG. 3 is a diagram showing the solar cell module shown in FIG. 2 according to a second embodiment. [Figure 8C] FIG. 10 is a diagram showing the solar cell module shown in FIG. 3B according to the third embodiment. [Figure 9A] FIG. 1 is a schematic diagram corresponding to a first embodiment of the present disclosure. [Figure 9B] FIG. 2 is a schematic diagram corresponding to the second embodiment of the present disclosure. [Figure 9C] FIG. 2 is a schematic diagram corresponding to a third embodiment of the present disclosure. [Figure 9D] FIG. 10 is a schematic diagram corresponding to the fourth embodiment of the present disclosure. [Figure 9E] FIG. 10 is a schematic diagram corresponding to the fifth embodiment of the present disclosure. [Figure 9F] FIG. 10 is a schematic diagram corresponding to the sixth embodiment of the present disclosure. [Figure 10] FIG. 1 is a schematic explanatory diagram showing the structure of a perovskite compound. [Figure 11] FIG. 1 is a cross-sectional view showing the basic configuration of a solar cell module disclosed in Patent Document 1. [Figure 12] FIG. 1 is a cross-sectional view showing the structure of a conventional solar cell module with an MPLE structure. DETAILED DESCRIPTION OF THE INVENTION

[0019] [First embodiment] An embodiment of the present disclosure will be described in detail below with reference to the drawings. Fig. 1 is a diagram showing a cross-sectional structure of a solar cell module according to an embodiment of the present disclosure, and is a diagram showing a solar cell module with a planar multilayer structure formed by laser scribing. Referring to FIG. 1, a solar cell module 10a according to this embodiment includes a glass substrate 11a, TCO (transparent conductive films) 13a1 and 13a2 formed on the glass substrate 11a and separated by a P1 scribe 24a, a lower ETL layer 14a and a lower HTL layer 15a formed on the TCOs 13a1 and 13a2 and separated in the horizontal direction, a perovskite layer (light absorbing layer) 17a formed continuously in the horizontal direction on the lower ETL layer 14a and the lower HTL layer 15a, an upper HTL layer 19a formed on the perovskite layer 17a at a position facing the lower ETL layer 14a, and an upper ETL layer 20a formed at a position facing the lower HTL layer 15a, and an upper electrode 22a formed continuously in the horizontal direction on the upper HTL layer 19a and the upper ETL layer 20a.

[0020] In FIG. 1, the photoelectric conversion element 26a is formed on the left edge of the glass substrate 11a by the TCO 13a1, lower ETL layer 14a, perovskite layer 17a, upper HTL layer 19a, and upper electrode 22a. To the right of the photoelectric conversion element 26a, the TCO 13a2, lower HTL layer 15a, perovskite layer 17a, upper ETL layer 20a, and upper electrode 22a form the photoelectric conversion element 27a. Furthermore, to the right of the photoelectric conversion element 27a, photoelectric conversion elements 28a and 29a are formed. The perovskite layer 17a of the photoelectric conversion element 26a and the perovskite layer 17a of the photoelectric conversion element 27a are formed continuously. In other words, the photoelectric conversion element 26a and the photoelectric conversion element 27a share a single perovskite layer 17a. Similarly, photoelectric conversion element 28a and photoelectric conversion element 29a also share one perovskite layer 17a. The perovskite layer 17a is separated between photoelectric conversion element 27a and photoelectric conversion element 28a. Note that, hereinafter, photoelectric conversion elements 26a, 27a, etc. may be collectively referred to simply as photoelectric conversion elements.

[0021] As will be described later, the photoelectric conversion elements 26 and 27 may not include an ETL layer or an HTL layer.

[0022] In the present disclosure, a structure in which the upper HTL layer 19a is located above the lower ETL layer 14a, such as photoelectric conversion elements 26a and 28a, is referred to as a forward structure. A structure in which the upper ETL layer 20a is located above the lower HTL layer 15a, such as photoelectric conversion elements 27a and 29a, is referred to as an inverted structure. In the solar cell module of the present disclosure, as shown in FIG. 1, for example, forward-structured photoelectric conversion elements and inverted-structured photoelectric conversion elements are alternately formed in the horizontal direction and connected in series. While the solar cell module 10a shown in FIG. 1 includes four photoelectric conversion elements, this is not limiting and any number of photoelectric conversion elements greater than or equal to two may be included. The solar cell module 10a may also include an odd number of photoelectric conversion elements.

[0023] Regarding the photoelectric conversion elements 27a and 28a in the solar cell module 10a shown in FIG. 1, current flows in the order of upper electrode 22a, perovskite layer 17a, TCO 13a2, perovskite layer 17a, and upper electrode 22a, as shown by the arrows in FIG. 1. Photoelectric conversion element 26a and photoelectric conversion element 27a respectively constitute effective areas 30a1 and 30a2 where power is generated. Although not shown, photoelectric conversion element 28a and photoelectric conversion element 29a also constitute effective areas. Meanwhile, an ineffective area 60a1 that does not or only little contributes to power generation exists between photoelectric conversion element 26a and photoelectric conversion element 27a. Furthermore, an ineffective area 60a2 exists between photoelectric conversion element 27a and photoelectric conversion element 28a. In this embodiment, the ineffective area 60a1 approximately coincides with the position where P1 scribe 24a was made, and the ineffective area 60a2 approximately coincides with the position where P3 scribe 25a was made. Here, the ineffective area 60a2 is formed by a groove formed by P3 scribe 25a from upper electrode 22a to the top surface of TCO 13a2, which physically separates the portions of photoelectric conversion element 27a and photoelectric conversion element 28a other than TCO 13a2. In contrast, the ineffective region 60a1 contains the perovskite layer 17a, and the photoelectric conversion elements 26a and 27a are not physically separated. However, the portion of the perovskite layer 17a included in the ineffective region 60a1 does not exhibit photoelectric conversion function because there are no ETL layers, HTL layers, electrodes, etc. above or below it. In this case, the perovskite layer 17a functions as an insulator. Therefore, the photoelectric conversion elements 26a and 27a are insulated from each other by the structure having the perovskite layer 17a that is continuous with the two photoelectric conversion elements, even without a separate insulating structure. The same applies to the ineffective region between the photoelectric conversion elements 28a and 29a.

[0024] As shown in FIG. 1, an ineffective region 60a1 between photoelectric conversion element 26a and adjacent photoelectric conversion element 27a is 50 μm wide, and an ineffective region 60a2 between photoelectric conversion element 27a and photoelectric conversion element 28a is 50 μm wide. Although not shown, an ineffective region between photoelectric conversion element 28a and adjacent photoelectric conversion element 29a is also 50 μm wide. In solar cell module 10a according to this embodiment, the width of the ineffective region between each photoelectric conversion element may be approximately 50 μm to 100 μm. Therefore, in FIG. 1, the ineffective region that does not contribute to power generation is 150 μm to 300 μm, which is three times 50 μm to 100 μm. In a solar cell module fabricated using laser scribing and having a structure in which four cells are connected in series, the conventional structure shown in FIG. 12 requires a total of 750 μm of ineffective area in three locations between the cells, but the structure of this embodiment shown in FIG. 1 can reduce the ineffective area to 150 μm to 300 μm, thereby increasing the integration efficiency.

[0025] As described above, in the present disclosure, by forming a photoelectric conversion element having a forward structure and a photoelectric conversion element having an inverted structure adjacent to each other, it is possible to eliminate the P2 scribe that causes current concentration and reduce the number of first and third scribes. This reduces the ineffective region and improves integration efficiency. Furthermore, as described above, in the present disclosure, by making the perovskite layer 17a function as an insulator, it is possible to insulate two adjacent photoelectric conversion elements without providing a separate insulating structure, thereby simplifying the structure and facilitating production.

[0026] Next, a method for manufacturing the solar cell module 10a shown in Figure 1 will be described. Referring to Figure 1, first, an infrared (IR) laser is applied to a glass substrate 11a with a transparent conductive film FTO to form 50-µm-wide P1 scribe lines 24a that electrically insulate the transparent conductive film. Next, inkjet printing is used to selectively form a lower ETL layer 14a and a lower HTL layer 15a in specified regions on the TCOs 13a1 and 13a2 formed by the P1 scribe lines 24a.

[0027] Next, a perovskite layer 17a is formed on the lower ETL layer 14a and the lower HTL layer 15a. Next, an upper HTL layer 19a and an upper ETL layer 20a are selectively formed in specified regions on the perovskite layer 17a by inkjet printing.

[0028] Next, a silver vapor deposition film (upper electrode 22a) is formed on the upper HTL layer 19a and the upper ETL layer 20a by vacuum deposition. Next, an ultraviolet (UV) laser is irradiated onto the glass substrate 11a to form a 50 μm-wide P3 scribe 25a that electrically insulates the upper electrode 22a. At this time, the perovskite layer 17a may also be removed at the P3 scribe 25a.

[0029] [Second embodiment] Next, the structure of a planar solar cell module formed by mechanical scribing will be described. Figure 2 is a diagram showing the structure of a planar solar cell module formed by mechanical scribing.

[0030] Referring to FIG. 2, solar cell module 10b includes glass substrate 11b, TCO layers 13b1 and 13b2 formed on glass substrate 11b and separated by P1 scribe line 24b, a lower ETL layer 14b and a lower HTL layer 15b formed on TCO layers 13b1 and 13b2 and separated in the horizontal direction, a perovskite layer 17b formed continuously in the horizontal direction on lower ETL layer 14b and lower HTL layer 15b, an upper HTL layer 19b formed on perovskite layer 17b at a position opposite to lower ETL layer 14b, and an upper ETL layer 20b formed at a position opposite to lower HTL layer 15b, and an upper electrode 22b formed continuously in the horizontal direction on upper HTL layer 19b and upper ETL layer 20b.

[0031] Again, photoelectric conversion element 26b is formed by TCO 13b1 formed on glass substrate 11b, lower ETL 14b formed on TCO 13b1, perovskite layer 17b formed on lower ETL 14b, upper HTL 19b formed on perovskite layer 17b, and upper electrode 22b formed on upper HTL 19b. To the right of photoelectric conversion element 26b, photoelectric conversion element 27b is formed by TCO 13b2, lower HTL 15b formed on TCO 13b2, perovskite layer 17b formed on lower HTL 15b, upper ETL 20b formed on perovskite layer 17b, and upper electrode 22b formed on upper ETL 20b. Furthermore, photoelectric conversion elements 28b and 29b are formed to the right of photoelectric conversion element 27b.

[0032] This embodiment differs from the first embodiment in that at P3 scribe 25b, only upper electrode 22b is removed by mechanical scribing, and perovskite layer 17b is not removed, so that photoelectric conversion elements 26b, 27b, 28b, and 29b share one perovskite layer 17b. Furthermore, the aspect of the ineffective region 60b2 of this embodiment is different from the aspect of the ineffective region 60a2 of the first embodiment. In the ineffective region 60b2, similar to the ineffective region 60a1 of the first embodiment, the perovskite layer 17b is present but does not exhibit a photoelectric conversion function, and the perovskite layer 17b functions as an insulator. Therefore, the photoelectric conversion element 27b and the photoelectric conversion element 28b are insulated by the structure having the perovskite layer 17b that exists continuously between the two photoelectric conversion elements, without the need for a separate insulating structure. Furthermore, the ineffective region 60b1 and The same applies to the ineffective region between photoelectric conversion elements 28b, 29b. Therefore, in solar cell module 10b of the present embodiment, by making perovskite layer 17b function as an insulator, it is possible to insulate any two adjacent photoelectric conversion elements without providing a separate insulating structure, and the structure can be further simplified.

[0033] [Third embodiment] Next, we will explain the case where a solar cell module with an MPLE structure is formed by screen printing. Figure 3A shows the state of a solar cell module with an MPLE structure formed by screen printing during formation, and Figure 3B shows the state of a solar cell module with an MPLE structure formed by screen printing after formation.

[0034] Referring to FIG. 3A, first, an infrared (IR) laser is irradiated onto a glass substrate 11c with a transparent conductive film FTO to form two scribe lines for electrically insulating the transparent conductive film, forming TCO 13c1 and TCO 13c2. Next, a lower ETL layer 14c is formed in a specified area on the TCO 13c1 and TCO 13c2 by screen printing. Next, a lower HTL layer 15c is formed by screen printing in a specified area where the lower ETL layer 14c is not formed. Next, a ZrO2 mesoporous insulating layer (referred to as "porous layer" in the figure) 18c is formed on the lower ETL layer 14c and the lower HTL layer 15c by screen printing. Next, an upper HTL layer 19c is formed in a specified area on the ZrO2 mesoporous insulating layer 18c by screen printing.

[0035] Next, an upper ETL layer 20c is formed by screen printing on the ZrO2 mesoporous insulating layer 18c in a specified area where the upper HTL layer 19c is not formed. A carbon electrode (upper electrode) 22c is formed on the upper HTL layer 19c and the upper ETL layer 20c by screen printing using a printing carbon paste. Next, perovskite precursor liquid 16 is dripped onto an area where the carbon electrode 22c is not present and the ZrO2 mesoporous insulating layer 18c is exposed.

[0036] As a result, a solar cell module 10c having a perovskite layer (light absorbing layer) 17c is obtained, as shown in FIG. 3B.

[0037] Referring to FIG. 3B , solar cell module 10c with an MPLE structure formed by screen printing includes glass substrate 11c, TCOs 13c1 and 13c2 formed on glass substrate 11c and separated by P1 scribe 24c, lower ETL layer 14c and lower HTL layer 15c formed on TCOs 13c1 and 13c2, perovskite layer 17c formed on lower ETL layer 14c and lower HTL layer 15c, upper HTL layer 19c and upper ETL layer 20c formed on perovskite layer 17c and separated, and upper electrode 22c formed on upper HTL layer 19c and upper ETL layer 20c.

[0038] A photoelectric conversion element 26c is formed by a TCO 13c1 formed on the glass substrate 11c, a lower ETL 14c formed on the TCO 13c1, a perovskite layer 17c formed on the lower ETL 14c, an upper HTL 19c formed on the perovskite layer 17c, and an upper electrode 22c formed on the upper HTL 19c. To the right of the photoelectric conversion element 26c, a photoelectric conversion element 27c is formed by a TCO 13c2, a lower HTL 15c formed on the TCO 13c2, a perovskite layer 17c formed on the lower HTL 15c, an upper ETL 20c formed on the perovskite layer 17c, and an upper electrode 22c formed on the upper ETL 20c. Furthermore, a photoelectric conversion element 28c and a photoelectric conversion element 29c are formed on the right of the photoelectric conversion element 27c. The perovskite layer 17c of each of the photoelectric conversion elements 26c, 27c, 28c, and 29c is formed continuously, in other words, the photoelectric conversion elements 26c, 27c, 28c, and 29c share one perovskite layer 17c.

[0039] Regarding the photoelectric conversion elements 27c and 28c in the solar cell module 10c, as shown by the arrows in FIG. 3B, current flows in the order of upper electrode 22c, perovskite layer 17c, TCO 13dc, perovskite layer 17c, and upper electrode 22c.

[0040] Photoelectric conversion element 26c and photoelectric conversion element 27c respectively constitute effective areas 30c1 and 30c2 where power is generated. Although not shown, photoelectric conversion element 28c and photoelectric conversion element 29c also constitute effective areas. Meanwhile, an ineffective area 60c1 exists between photoelectric conversion element 26c and photoelectric conversion element 27c. Furthermore, an ineffective area 60c2 exists between photoelectric conversion element 27c and photoelectric conversion element 28c. Although not shown, an ineffective area also exists between photoelectric conversion element 28c and photoelectric conversion element 29c. In both ineffective areas, perovskite layer 17c exists but does not perform photoelectric conversion function, and perovskite layer 17c functions as an insulator. Therefore, two adjacent photoelectric conversion elements are insulated from each other by the structure having perovskite layer 17c that exists continuously between the two photoelectric conversion elements, without the need for a separate insulating structure. Therefore, in the solar cell module 10c of this embodiment, by making the perovskite layer 17c function as an insulator, it is possible to insulate between any two adjacent photoelectric conversion elements without providing a separate insulating structure, thereby simplifying the structure.

[0041] Furthermore, according to this embodiment, the region 133 required for contacting the upper electrode 122b and the TCO 113b in the solar cell module of the conventional structure shown in Figure 13 is no longer necessary. Therefore, the width of the ineffective region can be reduced accordingly. Furthermore, the problem of deterioration due to current concentration at the contact portion between the upper electrode 122b and the TCO 113b can be avoided. Therefore, the risk of a decrease in reliability can be reduced, and reliability can be improved by combining the forward and reverse types.

[0042] Next, we will explain the integration efficiency of a solar cell module formed by MPLE screen printing according to the present disclosure. When forming a solar cell module 10c with an MPLE structure using screen printing, as described above, the positional accuracy of the formation of the lower ETL layer 14c, etc., by screen printing is lower than that of laser scribing. Therefore, it is preferable to set the width of the ineffective region 60c1, etc., to, for example, 500 μm. Therefore, in the solar cell module 10c shown in FIG. 3B, the total width of the three ineffective regions is 1500 μm. In contrast, in the solar cell module with a conventional structure formed using screen printing shown in FIG. 13, the width of one ineffective region is 1250 μm, and the total width of the three ineffective regions is 3750 μm. Therefore, the configuration of this embodiment can reduce the ineffective region and increase the integration efficiency.

[0043] [Fourth embodiment] Next, another configuration example of a solar cell module according to the present disclosure will be described. Fig. 4 is a cross-sectional view of a solar cell module 10e with an MPLE structure according to this embodiment. Referring to Fig. 4, the solar cell module 10e of this embodiment has photoelectric conversion elements 26e and 27e having a forward structure and an inverted structure formed continuously, similar to the solar cell module with an MPLE structure shown in Fig. 3B. However, unlike the solar cell module 10c according to the third embodiment shown in Fig. 3B, no HTL layer is provided.

[0044] Referring to FIG. 4, solar cell module 10e according to the present embodiment includes glass substrate 11e, TCO 13e1 and TCO 13e2 formed separately on glass substrate 11e, lower ETL layer 14e formed on TCO 13e1, perovskite layer 17e formed on lower ETL layer 14e and on TCO 13e2 where lower ETL layer 14e is not formed, upper ETL layer 20e formed on perovskite layer 17e in a region below which lower ETL layer 14e is not formed, and upper electrode 22e formed on perovskite layer 17e where upper ETL layer 20e is not formed and on upper ETL layer 20e.

[0045] Specifically, the lower ETL layer 14e is a mesoporous electron transport layer made of TiO2, and the perovskite layer 17e is formed in the pores of a mesoporous insulating layer made of ZrO2 by impregnating the pores with a perovskite precursor liquid (not shown) and crystallizing the liquid to form the perovskite layer (light absorbing layer) 17e in the pores. The upper electrode 22e is mesoporous carbon.

[0046] 4, a photoelectric conversion element 26e is formed by a TCO 13e1 provided at the left end of FIG. 4, a lower ETL layer 14e provided on the TCO 13e1, a perovskite layer 17e provided on the lower ETL layer 14e, and an upper electrode 22e provided on the perovskite layer 17e. A photoelectric conversion element 27e is formed by a TCO 13e2, a perovskite layer 17e provided on the TCO 13e2, an upper ETL layer 20e provided on the perovskite layer 17e, and an upper electrode 22e formed on the upper ETL layer 20e. Furthermore, a photoelectric conversion element 28e and a photoelectric conversion element 29e are formed to the right of the photoelectric conversion element 27e. The perovskite layers 17e of the photoelectric conversion elements 26e, 27e, 28e, and 29e are continuously formed. In other words, the photoelectric conversion elements 26e, 27e, 28e, and 29e share one perovskite layer 17e.

[0047] The solar cell module 10e of the present embodiment shown in FIG. 4 differs from the solar cell modules shown in FIGS. 1, 2, and 3B in that each photoelectric conversion element does not have an HTL layer (upper HTL layer or lower HTL layer). In this way, each photoelectric conversion element may have only an ETL layer without an HTL layer. Note that the solar cell module 10e shown in FIG. 4 is a solar cell module with an MPLE structure, but it may also be a planar solar cell module with a configuration in which each photoelectric conversion element does not have an HTL layer but has only an ETL layer, as in the present embodiment.

[0048] As described above, in the solar cell module 10e of the present embodiment, the photoelectric conversion elements do not have an HTL layer, which reduces the number of manufacturing steps and also reduces concerns about reduced reliability due to the formation of the HTL layer.

[0049] [Fifth embodiment] Next, another embodiment of the present disclosure will be described. In the above embodiments, a perovskite layer is used as the light absorbing layer, but in this embodiment, an organic thin film is used as the light absorbing layer. Here, the structure of the organic thin film solar cell described in the following web document is used as the basis. https: / / www.aist.go.jp / aist_j / press_release / pr2005 / pr20050127 / pr20050127.html 5A is a diagram showing the structure of an organic thin-film solar cell 31 described in the above-mentioned web publication. Referring to FIG. 5A, the organic thin-film solar cell 31 includes a transparent electrode 32, a first buffer layer 33 formed on the transparent electrode 32, a p-layer (ZnPc) 34 formed on the first buffer layer 33, an i-layer (ZnPc:C60) 35 formed on the p-layer (ZnPc) 34, an n-layer (C60) 36 formed on the i-layer (ZnPc:C60) 35, a second buffer layer 37 formed on the n-layer (C60) 36, and a metal electrode 38 formed on the second buffer layer 37. Here, the i-layer 35 corresponds to a light absorption layer, and the first and second buffer layers 33 and 37 correspond to charge transport layers.

[0050] FIG. 5B shows the cross-sectional structure of a solar cell module having a structure (for four cells) according to the present disclosure based on the organic thin-film solar cell 31 shown in FIG. 5A. That is, referring to FIG. 5B, solar cell module 10f in this embodiment includes substrate 40, transparent electrodes 32a, 32b formed and separated on substrate 40, a first buffer layer 33a and a second buffer 37a formed and separated in the horizontal direction on transparent electrodes 32a, 32b, an n-layer 36a and a p-layer 34a formed and separated in the horizontal direction on first buffer layer 33a and second buffer 37a, an i-layer 35 serving as a light absorbing layer formed and continuously in the horizontal direction on n-layer 36a and p-layer 34a, a p-layer 34b and an n-layer 36b formed and separated in the horizontal direction on i-layer 35, a second buffer layer 37b and a first buffer layer 33b formed and separated in the horizontal direction on p-layer 34b and n-layer 36b, and a metal electrode 38 formed and continuously in the horizontal direction on second buffer layer 37b and first buffer layer 33b. Here, each layer other than the transparent electrodes 32a and 32b can be formed by printing (inkjet printing, screen printing, etc.) in the same manner as in the above-described embodiments.

[0051] Here too, the transparent electrode 32a formed on the substrate 40, the first buffer layer 33a formed on the transparent electrode 32a, the n-layer 36a formed on the first buffer layer 33a, the i-layer 35 formed on the n-layer 36a, the p-layer 34b formed on the i-layer 35, the second buffer layer 37b formed on the p-layer 34b, and the metal electrode 38 constitute the photoelectric conversion element 26f, and the transparent electrode 32b, the second buffer layer 37a formed on the transparent electrode 32b, the p-layer 34a formed on the second buffer layer 37a, the i-layer 35 formed on the p-layer 34a, the n-layer 36b formed on the i-layer 35, the first buffer layer 33b formed on the n-layer 36b, and the metal electrode 38 constitute the photoelectric conversion element 27f. Furthermore, photoelectric conversion elements 28f and 29f are formed to the right of photoelectric conversion element 27f. The i-layers 35 of photoelectric conversion elements 26f, 27f, 28f, and 29f are formed continuously. In other words, photoelectric conversion elements 26f, 27f, 28f, and 29f share one i-layer 35c.

[0052] Photoelectric conversion element 26f and photoelectric conversion element 27f respectively constitute effective areas 30f1 and 30f2 where power is generated. Although not shown, photoelectric conversion element 28f and photoelectric conversion element 29f also constitute effective areas. Meanwhile, an ineffective area 60f1 exists between photoelectric conversion element 26f and photoelectric conversion element 27f. Furthermore, an ineffective area 60f2 exists between photoelectric conversion element 27f and photoelectric conversion element 28f. Although not shown, an ineffective area also exists between photoelectric conversion element 28f and photoelectric conversion element 29cf. In both ineffective areas, the i-layer 35 exists but does not perform photoelectric conversion function, and the i-layer 35 functions as an insulator. Therefore, two adjacent photoelectric conversion elements are insulated from each other by the structure having the i-layer 35 that is continuous with the two photoelectric conversion elements, without the need for a separate insulating structure. Therefore, in the solar cell module 10f of this embodiment, by making the i-layer 35 function as an insulator, it is possible to insulate between any two adjacent photoelectric conversion elements without providing a separate insulating structure, thereby simplifying the structure.

[0053] It should be noted that a silicon-based thin film may be used as the light absorption layer instead of the i-layer (ZnPc:C60) 35. For example, a single-crystal silicon thin film, an amorphous silicon thin film, a microcrystalline silicon thin film, or a low-temperature polysilicon thin film may be used. In consideration of the distance required for insulation between cells, it is preferable to use a material with a short carrier diffusion length for the light absorption layer. For this reason, it is preferable to use an amorphous silicon thin film, a microcrystalline silicon thin film, or a low-temperature polysilicon thin film for the light absorption layer. It should be noted that the distance required for insulation between cells depends, for example, on the carrier diffusion length of the material used for the light absorption layer.

[0054] Furthermore, a compound semiconductor thin film (CIGS, CdTe, etc.) may be used as the light absorption layer. [Sixth embodiment] Next, another configuration example of a solar cell module according to the present disclosure will be described. FIG. 6 is a cross-sectional view of a solar cell module 10g with an MPLE structure according to a sixth embodiment. Referring to FIG. 6, the solar cell module 10g with an MPLE structure according to the sixth embodiment has photoelectric conversion elements 26g and 27g having a forward structure and an inverted structure formed continuously, similar to the solar cell module with an MPLE structure shown in FIG. 3B. However, unlike the solar cell module shown in FIG. 3B, the solar cell module 10g does not have an ETL layer and only has an HTL layer. In this way, each photoelectric conversion element may have only an HTL layer without an ETL layer. Note that a planar solar cell module with a configuration similar to this embodiment may also be used.

[0055] [Seventh embodiment] Next, another configuration example of a solar cell module according to the present disclosure will be described. FIG. 7 is a cross-sectional view of a solar cell module 10h with an MPLE structure according to a seventh embodiment. Referring to FIG. 7, the solar cell module 10h with an MPLE structure according to the seventh embodiment has photoelectric conversion elements 26h and 27h having a forward structure and an inverted structure formed continuously, similar to the solar cell module with an MPLE structure shown in FIG. 3B. However, unlike the solar cell module shown in FIG. 3B, the ETL layer and the HTL layer are provided only on one side of the perovskite layer 17h (more specifically, between the perovskite layer 17h and the TCOs 13h1 and 13h2). Note that, contrary to the structure shown in FIG. 7, a structure in which the ETL layer and the HTL layer are provided only between the perovskite layer 17h and the upper electrodes 22h and 22h is also possible. Furthermore, a planar solar cell module with a configuration similar to that of this embodiment is also possible.

[0056] [Relationship between each embodiment of the present disclosure and main components] Next, the relationship between each embodiment of the present disclosure and its main constituent elements will be described. Figures 8A to 8C are diagrams for explaining the relationship between each embodiment of the present disclosure and its main constituent elements. Figures 4, 6, and 7 will also be referenced to explain the relationship between each embodiment of the present disclosure and its main constituent elements.

[0057] FIG. 8A is a diagram showing the solar cell module 10a shown in FIG. 1 in the first embodiment, FIG. 8B is a diagram showing the solar cell module 10b shown in FIG. 2 in the second embodiment, and FIG. 8C is a diagram showing the solar cell module 10c shown in FIG. 3B in the third embodiment.

[0058] 8A, in addition to the configuration of solar cell module 10a shown in Fig. 1, photoelectric conversion elements 26a and 27a, which are its main constituent units, are shown surrounded by solid line 51. Here, photoelectric conversion elements 26a and 27a shown surrounded by solid line 51 have common electrode 22a formed on the upper side, and two electrodes (TCO) 13a1 and 13a2 of different polarities formed below them with perovskite layer 17a sandwiched therebetween.

[0059] Here, the description of the charge transport layer (ETL layer and HTL layer) is omitted.

[0060] 8B, in addition to the configuration of solar cell module 10b shown in FIG. 2, photoelectric conversion elements 26b and 27b, which are one of its main constituent units, are shown surrounded by a solid line 51. Further, photoelectric conversion elements 27b and 28b, which are other main constituent units, are shown surrounded by a dotted line 53. Here, photoelectric conversion elements 26b and 27b shown surrounded by solid line 51 are the same as those in FIG. 8A, with common electrode 22b formed on the upper side and two electrodes (TCO) 13b1 and 13b2 of different polarities formed below it with perovskite layer 17b sandwiched therebetween.

[0061] On the other hand, in the structural unit shown surrounded by dotted line 53, a common electrode (TCO) 13b2 is formed on the lower side of photoelectric conversion element 27b and photoelectric conversion element 28b, and two upper electrodes 22b and 22b1 of different polarities are formed on top of them, sandwiching perovskite layer 17b.

[0062] 8C, in addition to the configuration of solar cell module 10c shown in FIG. 3B, photoelectric conversion elements 26c and 27c, which are one of its main constituent units, are shown surrounded by a solid line 51. Further, photoelectric conversion elements 27c and 28c, which are other main constituent units, are shown surrounded by a dotted line 53. Here, photoelectric conversion elements 26c and 27c shown surrounded by solid line 51 are similar to the configuration shown by solid line 51 in FIG. 8A, and photoelectric conversion elements 27c and 28c shown surrounded by dotted line 53 are similar to the configuration surrounded by dotted line 53 in FIG. 8B.

[0063] 4, regarding the configuration of solar cell module 10e, photoelectric conversion elements 26e and 27e, which are one of its main constituent units, are shown surrounded by a solid line 51. Furthermore, photoelectric conversion elements 27e and 28e, which are other main constituent units, are shown surrounded by a dotted line 53. Here, photoelectric conversion elements 26c and 27c shown surrounded by solid line 51 are similar to the configuration shown by solid line 51 in FIG. 8A etc., and photoelectric conversion elements 27c and 28c shown surrounded by dotted line 53 are similar to the configuration shown by dotted line 53 in FIG. 8B etc.

[0064] 6, with regard to the configuration of solar cell module 10g, photoelectric conversion elements 26g and 27g, which are one of its main constituent units, are shown surrounded by a solid line 51. Furthermore, photoelectric conversion elements 27g and 28g, which are other main constituent units, are shown surrounded by a dotted line 53. Here, photoelectric conversion elements 26g and 27g shown surrounded by solid line 51 are similar to the configuration shown by solid line 51 in FIG. 8A etc., and photoelectric conversion elements 27g and 28g shown surrounded by dotted line 53 are similar to the configuration shown by dotted line 53 in FIG. 8B etc.

[0065] 7, regarding the configuration of solar cell module 10h, photoelectric conversion elements 26h and 27h, which are one of its main constituent units, are shown surrounded by a solid line 51. Furthermore, photoelectric conversion elements 27h and 28h, which are other main constituent units, are shown surrounded by a dotted line 53. Here, photoelectric conversion elements 26h and 27h shown surrounded by solid line 51 are similar to the configuration shown by solid line 51 in FIG. 8A etc., and photoelectric conversion elements 27h and 28h shown surrounded by dotted line 53 are similar to the configuration shown by dotted line 53 in FIG. 8B etc.

[0066] Next, the relationship between the main structural units of the present disclosure and several aspects of the present disclosure will be described based on the considerations of Figures 8A to 8C, 4, 6, and 7. Figures 9A to 9F are diagrams for explaining the relationship between the main structural units of the present disclosure and several aspects of the present disclosure.

[0067] First, FIG. 9A is a schematic diagram corresponding to the first embodiment of the present disclosure, and is a diagram schematically illustrating a basic configuration common to the present disclosures shown in FIGS. 8A to 8C, 4, 6, and 7. Referring to FIG. 9A, in the first embodiment of the present disclosure, a first photoelectric conversion element 71 and a second photoelectric conversion element 72 are continuously arranged in the horizontal direction. A common first electrode 73 is provided on the upper side in FIG. 9A, a common light-absorbing layer 74 is provided below the first electrode 73, and a second electrode 75 and a third electrode 76 are provided below the first electrode 73. The second electrode 75 is included in the first photoelectric conversion element 71, and the third electrode 76 is included in the second photoelectric conversion element 72. The light-absorbing layer 74 is, for example, a perovskite layer. The light-absorbing layer 74 included in the first photoelectric conversion element 71 and the light-absorbing layer 74 included in the second photoelectric conversion element 72 are continuous. The first photoelectric conversion element 71 has a positive electrode on the first electrode 73 side and a negative electrode on the second electrode 75 side. The second photoelectric conversion element 72 has a positive electrode on the third electrode 75 side and a negative electrode on the first electrode 73 side. That is, the first photoelectric conversion element 71 and the second photoelectric conversion element 72 have opposite polarities. The polarities of the first photoelectric conversion element 71 and the second photoelectric conversion element 72 are determined by, for example, an HTL layer and an ETL layer, which are not shown in FIG. 9A. Note that a substrate is not shown in FIG. 9A. Similarly, a substrate is not shown in FIGS. 9B, 9C, and 9D.

[0068] The relationship between the configuration shown in Fig. 9A and the structural units surrounded by solid line 51 in Figs. 8A to 8C, 4, 6, and 7 is as follows: A first photoelectric conversion element 71 corresponds to photoelectric conversion elements 26a, 26b, 26c, 26e, 26g, and 26h in the structural unit surrounded by solid line 51. A second photoelectric conversion element 72 corresponds to photoelectric conversion elements 27a, 27b, 27c, 27e, 27g, and 27h in the structural unit surrounded by solid line 51. More specifically, first electrode 73 corresponds to upper electrodes 22a, 22b, 22c, 22e, 22g, and 22h; light absorbing layer 74 corresponds to perovskite layers 17a, 17b, 17c, 17e, 17g, and 17h; second electrode 75 corresponds to TCOs 13a1, 13b1, 13c1, 13e1, 13g1, and 13h1; and third electrode 76 corresponds to TCOs 13a2, 13b2, 13c2, 13e2, 13g2, and 13h2.

[0069] The relationship between the configuration shown in Fig. 9A and the structural units surrounded by dotted line 53 in Figs. 8B, 8C, 4, 6, and 7 can be determined as follows when the structural units surrounded by dotted line 53 are inverted upside down: A first photoelectric conversion element 71 corresponds to photoelectric conversion elements 27b, 27c, 27e, 27g, and 27h in the structural unit surrounded by dotted line 53. A second photoelectric conversion element 72 corresponds to photoelectric conversion elements 28b, 28c, 28e, 28g, and 28h in the structural unit surrounded by dotted line 53. More specifically, the first electrode 73 corresponds to TCO layers 13b2, 13c2, 13e2, 13g2, and 13h2, the light absorbing layer 74 corresponds to perovskite layers 17b, 17c, 17e, 17g, and 17h, the second electrode 75 corresponds to upper electrodes 22b, 22c, 22e, 22g, and 22h, and the third electrode 76 corresponds to upper electrodes 22b1, 22c1, 22e1, 22g1, and 22h1.

[0070] As described above, the first aspect described above with reference to FIG. 9A is a configuration common to the embodiments shown in FIGS. 8A to 8C, 4, 6, and 7.

[0071] 9B is a schematic diagram corresponding to a second embodiment of the present disclosure. The second embodiment is a sub-concept of the first embodiment. Referring to FIG. 9B, a first ETL layer 77 provided between the second electrode 75 and the light absorbing layer 74 in the first photoelectric conversion element 71 and a second ETL layer 78 provided between the first electrode 73 and the light absorbing layer 74 in the second photoelectric conversion element 72 are added to FIG. 9A.

[0072] The relationship between the configuration shown in FIG. 9B and the structural units surrounded by solid line 51 in FIGS. 8A to 8C and 4 is as follows: A first ETL layer 77 corresponds to the lower ETL layers 14a, 14b, 14c, and 14e in the structural units surrounded by solid line 51. A second ETL layer 78 corresponds to the upper ETL layers 20a, 20b, 20c, and 20e in the structural units surrounded by solid line 51. Other correspondences are the same as in the first embodiment. Note that the configuration shown in FIG. 9B does not correspond to the structural units surrounded by solid line 51 in FIGS. 6 and 7.

[0073] The relationship between the configuration shown in FIG. 9B and the structural units surrounded by dotted line 53 in FIGS. 8B, 8C, and 4 can be determined as follows by inverting the structural units surrounded by dotted line 53 upside down: A first ETL layer 77 corresponds to the upper ETL layers 20b, 20c, and 20e in the structural units surrounded by dotted line 53. A second ETL layer 78 corresponds to the lower ETL layers 14b1, 14c1, and 14e1 in the structural units surrounded by dotted line 53. Other correspondences are the same as in the first embodiment. Note that the configuration shown in FIG. 9B does not correspond to the structural units surrounded by dotted line 53 in FIGS. 6 and 7.

[0074] As described above, the second aspect described above with reference to FIG. 9B is a configuration common to the embodiments shown in FIGS. 8A to 8C and 4.

[0075] 9C is a schematic diagram corresponding to a third embodiment of the present disclosure. The third embodiment is a sub-concept of the first embodiment. Referring to FIG. 9C, compared to FIG. 9A, a first HTL layer 79 is provided between the first electrode 73 and the light absorbing layer 74 in the first photoelectric conversion element 71, and a second HTL layer 80 is provided between the third electrode 76 and the light absorbing layer 74 in the second photoelectric conversion element 72.

[0076] The relationship between the configuration shown in FIG. 9C and the structural units surrounded by the solid line 51 in FIGS. 8A to 8C and 6 is as follows: The first HTL layer 79 corresponds to the upper HTL layers 19a, 19b, 19c, and 19g in the structural units surrounded by the solid line 51. The second HTL layer 80 corresponds to the lower HTL layers 15a, 15b, 15c, and 15g in the structural units surrounded by the solid line 51. Other correspondences are the same as in the first embodiment. Note that the configuration shown in FIG. 9C does not correspond to the structural units surrounded by the solid line 51 in FIGS. 4 and 7.

[0077] The relationship between the configuration shown in FIG. 9C and the structural units surrounded by dotted line 53 in FIGS. 8B, 8C, and 6 can be determined as follows by inverting the structural units surrounded by dotted line 53. The first HTL layer 79 corresponds to the lower HTL layers 15b, 15c, and 15g in the structural units surrounded by dotted line 53. The second HTL layer 80 corresponds to the upper HTL layers 19b1, 19c1, and 19g1 in the structural units surrounded by dotted line 53. The other correspondences are the same as in the first embodiment. Note that the configuration shown in FIG. 9C does not correspond to the structural units surrounded by dotted line 53 in FIGS. 4 and 7.

[0078] As described above, the third aspect described above with reference to FIG. 9C is a configuration common to the embodiments shown in FIGS. 8A to 8C and 6.

[0079] FIG. 9D is a schematic diagram corresponding to a fourth embodiment of the present disclosure, illustrating a basic configuration common to the present disclosures shown in FIGS. 8A to 8C, 4, 6, and 7, from a different perspective than the first embodiment. Referring to FIG. 9D, in the fourth embodiment of the present disclosure, a first photoelectric conversion element 71 and a second photoelectric conversion element 72 are arranged continuously in the horizontal direction. A common first electrode 73 is provided on the upper side in FIG. 9A, a common light-absorbing layer 74 is provided below the common first electrode 73, and a second electrode 75 and a third electrode 76 are provided below the common first electrode 73. The second electrode 75 is included in the first photoelectric conversion element 71, and the third electrode 76 is included in the second photoelectric conversion element 72. The light-absorbing layer 74 is, for example, a perovskite layer. The first photoelectric conversion element 71 includes at least one of a first charge transport layer 81 between the first electrode 73 and the light-absorbing layer 74 or a second charge transport layer 82 between the second electrode 75 and the light-absorbing layer 74. The second photoelectric conversion element 72 includes at least one of a third charge transport layer 83 between the first electrode 73 and the light absorption layer 74, or a fourth charge transport layer 84 between the third electrode 76 and the light absorption layer 74. The first charge transport layer 81 and the fourth charge transport layer 84 are capable of transporting first-type charges. The second charge transport layer 82 and the third charge transport layer 83 are capable of transporting second-type charges. The first-type charges are electrons or holes, and the second-type charges are of the opposite type to the first-type charges. The light absorption layer 74 included in the first photoelectric conversion element 71 and the light absorption layer 74 included in the second photoelectric conversion element 72 are continuous.

[0080] The relationship between the configuration shown in Fig. 9D and the structural units surrounded by solid lines 51 in Figs. 8A to 8C, 4, 6, and 7 is as follows. Note that the first photoelectric conversion elements 71, second photoelectric conversion elements 72, first electrodes 73, light absorption layers 74, second electrodes 75, and third electrodes 76 have the same corresponding relationships as those explained in Figs. 9A to 9C above, and therefore explanations thereof will be omitted. In addition, an example in which the first-type charges are holes will be explained.

[0081] The first charge transport layer 81 corresponds to the upper HTL layers 19a, 19b, 19c, and 19g in the structural units surrounded by the solid line 51. The structural units surrounded by the solid line 51 in FIGS. 4 and 7 do not have a structure corresponding to the first charge transport layer 81. The second charge transport layer 82 corresponds to the lower ETL layers 14a, 14b, 14c, 14e, and 14h in the structural units surrounded by the solid line 51. The structural units surrounded by the solid line 51 in FIG. 6 do not have a structure corresponding to the second charge transport layer 82. However, the structural units surrounded by the solid line 51 in FIGS. 4, 6, and 7 have a structure corresponding to at least one of the first charge transport layer 81 and the second charge transport layer 82.

[0082] The third charge transport layer 83 corresponds to the upper ETL layers 20a, 20b, 20c, and 20e in the structural units surrounded by the solid line 51. The structural units surrounded by the solid line 51 in FIGS. 6 and 7 do not have a structure corresponding to the third charge transport layer 83. The fourth charge transport layer 84 corresponds to the lower HTL layers 15a, 15b, 15c, 15g, and 15h in the structural units surrounded by the solid line 51. The structural units surrounded by the solid line 51 in FIG. 4 do not have a structure corresponding to the fourth charge transport layer 84. However, the structural units surrounded by the solid line 51 in FIGS. 4, 6, and 7 have a structure corresponding to at least one of the third charge transport layer 83 and the fourth charge transport layer 84.

[0083] Next, the relationship between the configuration shown in Fig. 9D and the structural units surrounded by dotted line 53 in Figs. 8A to 8C, 4, 6, and 7 can be determined as follows after the structural units surrounded by dotted line 53 are inverted upside down. Note that the first photoelectric conversion elements 71, second photoelectric conversion elements 72, first electrodes 73, light absorption layers 74, second electrodes 75, and third electrodes 76 have the same corresponding relationships as those described above in Figs. 9A to 9C, and therefore their description will be omitted. In addition, the case where the first-type charges are holes will be described as an example.

[0084] The first charge transport layer 81 corresponds to the lower HTL layers 15a, 15b, 15c, 15g, and 15h in the structural units surrounded by the dotted line 53. The structural units surrounded by the dotted line 53 in FIG. 4 do not have a structure corresponding to the first charge transport layer 81. The second charge transport layer 82 corresponds to the upper ETL layers 20a, 20b, 20c, and 20e in the structural units surrounded by the dotted line 53. The structural units surrounded by the dotted line 53 in FIGS. 6 and 7 do not have a structure corresponding to the second charge transport layer 82. However, the structural units surrounded by the dotted line 53 in FIGS. 4, 6, and 7 have a structure corresponding to at least one of the first charge transport layer 81 or the second charge transport layer 82.

[0085] The third charge transport layer 83 corresponds to the lower ETL layers 14b1, 14c1, 14e1, and 14h1 in the structural unit surrounded by the dotted line 53. The structural unit surrounded by the dotted line 53 in FIG. 6 does not have a component corresponding to the third charge transport layer 83. The fourth charge transport layer 84 corresponds to the upper HTL layers 19b1, 19c1, and 19g1 in the structural unit surrounded by the dotted line 53. The structural unit surrounded by the dotted line 53 in FIGS. 4 and 7 does not have a component corresponding to the fourth charge transport layer 84. However, the structural unit surrounded by the dotted line 53 in FIGS. 4, 6, and 7 has a component corresponding to at least one of the third charge transport layer 83 and the fourth charge transport layer 84.

[0086] As described above, the fourth aspect described above with reference to FIG. 9D is a configuration common to the embodiments shown in FIGS. 8A to 8C, 4, 6, and 7.

[0087] 9E is a schematic diagram corresponding to a fifth embodiment of the present disclosure. The fifth embodiment is a subordinate concept of the first to fourth embodiments. Referring to FIG. 9E, compared to FIGS. 9A to 9D, ignoring the charge transport layer, a substrate (base) 85a is added, which is provided on the second electrode 75 and the third electrode 76 side.

[0088] The configuration shown in Fig. 9E corresponds to the structural units surrounded by solid lines 51 in Figs. 8A to 8C, 4, 6, and 7. The correspondence is as follows: first electrode 73 corresponds to upper electrodes 22a, 22b, 22c, 22e, 22g, and 22h; light absorption layer 74 corresponds to perovskite layers 17a, 17b, 17c, 17e, 17g, and 17h; second electrode 75 corresponds to TCOs 13a1, 13b1, 13c1, 13e1, 13g1, and 13h1; third electrode 76 corresponds to TCOs 13a2, 13b2, 13c2, 13e2, 13g2, and 13h2; and substrate (base) 85a corresponds to glass substrates 11a, 11b, 11c, 11e, 11g, and 11h.

[0089] As described above, the fifth aspect described above with reference to FIG. 9E is a configuration common to the embodiments shown in FIGS. 8A to 8C, 4, 6, and 7.

[0090] 9F is a schematic diagram corresponding to a sixth embodiment of the present disclosure. The sixth embodiment is a subordinate concept of the first to fourth embodiments. Referring to FIG. 9F, compared to FIGS. 9A to 9D, ignoring the charge transport layer, a substrate (base) 85b is added to the first electrode 73 side, which is the common electrode.

[0091] The configuration shown in Figure 9F corresponds to a configuration obtained by inverting the structural unit surrounded by dotted line 53 in Figures 8B, 8C, 4, 6, and 7. The correspondences are as follows: first electrode 73 corresponds to TCO layers 13b2, 13c2, 13e2, 13g2, and 13h2; light absorption layer 74 corresponds to perovskite layers 17b, 17c, 17e, 17g, and 17h; second electrode 75 corresponds to upper electrodes 22b, 22c, 22e, 22g, and 22h; third electrode 76 corresponds to upper electrodes 22b1, 22c1, 22e1, 22g1, and 22h1; and substrate (base) 85b corresponds to glass substrates 11b, 11c, 11e, 11g, and 11h.

[0092] As described above, the sixth aspect described above with reference to FIG. 9F is a configuration common to the embodiments shown in FIGS. 8B, 8C, 4, 6 and 7.

[0093] Although a perovskite layer is exemplified as the light absorbing layer here, other components are also disclosed as the light absorbing layer in the present disclosure.

[0094] Next, the terms used in the embodiments of the present disclosure will be explained based on the first embodiment described with reference to FIG. 1. The solar cell module 10a according to the first embodiment is a planar solar cell module. Hereinafter, the term "substrate 11a" used in the embodiment refers to the substrate 11a of the solar cell module 10a, and is the same as or includes the base or substrate. Examples of the shape of the substrate 11a include a flat plate and a film. The substrate 11a may be hard and highly rigid, or may be flexible or less rigid. When light is irradiated onto the surface of the solar cell module 10a facing the substrate 11a (the lower surface of the substrate 11a), the substrate 11a is preferably transparent.

[0095] In this case, examples of materials for the substrate 11a include transparent glass and heat-resistant transparent resin. When light is irradiated from the opposite side, the substrate 11a may be opaque. Note that "transparent" means that light is transmitted, but does not exclude materials that reflect light even slightly. It is sufficient if the substrate can transmit light appropriately, and can be considered synonymous with being provided on the light-receiving surface side of the solar cell module 10a (including the portion where light is incident, the same in the present disclosure). Therefore, being provided at least on the light-receiving surface side of the solar cell module 10a can be considered transparent.

[0096] The TCOs 13a1 and 13a2 are formed on the upper surface of the substrate 11a and function as electrodes for extracting photovoltaic power from the solar cell module 10a. The TCOs 13a1 and 13a2 are formed of a transparent conductive material, such as FTO (fluorine-doped tin oxide), CuI (copper iodide), ITO (indium tin oxide), SnO2 (tin oxide), AZO (aluminum zinc oxide), IZO (indium zinc oxide), GZO (gallium zinc oxide), and ATO (antimony-doped tin oxide), as well as conductive transparent polymers. Note that the chemical formulas are representative examples and may be any compound names (as in the present disclosure). Furthermore, although the composition ratio of the chemical formula is preferably stoichiometric, it is not necessarily stoichiometric.

[0097] The lower ETL layer 14a and the upper ETL layer 20a are layers capable of transporting electrons generated in the perovskite layer 17a, and naturally have this function as long as they function as the solar cell module 10a. This can be considered synonymous with being disposed on the electron transport side of the perovskite layer 17a of the solar cell module 10a. Therefore, as long as they are disposed at least on the electron transport side of the perovskite layer 17a, they can be considered to have an electron transport function. The lower ETL layer 14a and the upper ETL layer 20a preferably have a function of blocking hole transport.

[0098] The term "layer" does not specify thickness or width, and includes a pattern or island shape, or a layer having portions of different thickness. A layer is preferably a member having a substantially constant thickness.

[0099] The lower HTL layer 15a and the upper HTL layer 19a are layers capable of transporting holes generated in the perovskite layer 17a. These layers naturally have this function as long as they function as the solar cell module 10a, and can be considered to be located on the hole transport side of the perovskite layer 17a of the solar cell module 10a. Therefore, as long as they are located at least on the hole transport side of the perovskite layer 17a, they can be considered to have a hole transport function. The lower HTL layer 15a and the upper HTL layer 19a preferably have a function of blocking electron transport.

[0100] The perovskite layer (light absorbing layer) 17a described above is a layer containing a perovskite compound. As long as the solar cell module has a photoelectric conversion function, the light absorbing layer naturally generates electrons and holes upon photoexcitation. The electrons generated in the light absorbing layer migrate to the lower and upper ETL layers 14a and 20a, and the holes generated in the light absorbing layer migrate to the lower and upper HTL layers 15a and 19a, resulting in charge separation. Therefore, as long as the solar cell module has a photoelectric conversion function, it can be said that electrons and holes are generated upon photoexcitation. The lower and upper ETL layers 14a and 20a and the lower and upper HTL layers 15a and 19a may also contain layers filled with a perovskite compound. In other words, the voids in the lower and upper ETL layers 14a and 20a and the HTL layers 15a and 19a may also contain a perovskite compound. The voids in the lower and upper ETL layers 14a, 20a and the HTL layers 15a, 19a are preferably filled with a perovskite compound. The thickness of the light absorbing layer is preferably 500 nm to 2 μm, more preferably 700 nm to 800 nm.

[0101] The perovskite compound contained in the light-absorbing layer is composed of a compound represented by the general formula: ABX3 (1). While the composition ratio of each element is preferably 1:1:3, it is not necessarily 1:1:3. The content of each element may vary as appropriate, and each element does not necessarily have to be a single type. As long as the light-absorbing layer has photoelectric conversion function, there is a degree of freedom in the composition as described above. In general formula (1), A represents an organic molecule (including an organic group or an organic cation, as defined in the present disclosure) or an inorganic atom or molecule (including an inorganic group or an inorganic cation, as defined in the present disclosure) or a combination thereof; B represents a metal atom or molecule (including a metal cation, as defined in the present disclosure); and X represents a halogen atom or molecule or a chalcogen atom or molecule (including a halogen anion or a chalcogen anion, as defined in the present disclosure). In general formula (1), the three Xs may be the same or different from each other. When contained in a light absorption layer, a perovskite compound is capable of absorbing light and converting it into electricity, and this fact should also be taken into consideration. In other words, a perovskite compound is determined to have A, B, and X, and it is sufficient to know that the compound has, for example, an organic molecule, a metal atom, and a halogen atom.

[0102] Furthermore, a perovskite compound can be confirmed by detecting elements corresponding to A, B, and X, so long as the light absorbing layer has a photoelectric conversion function. For example, molecules containing carbon, nitrogen, and hydrogen are suitable as organic molecules, and therefore, carbon, nitrogen, hydrogen, a metal element, and a halogen or chalcogen can be detected. Alternatively, a perovskite compound can be confirmed by having A, B, and X, for example, by detecting an inorganic atom, a metal atom, and a halogen atom. Furthermore, a perovskite compound can be confirmed by detecting elements corresponding to A, B, and X, so long as the light absorbing layer has a photoelectric conversion function. For example, cesium or rubidium is suitable as an inorganic atom, and therefore, cesium or rubidium, a metal element, and a halogen or chalcogen can be detected. Furthermore, a perovskite compound does not necessarily need to be confirmed as having a crystalline structure, since it is a natural consequence that a light absorbing layer has a crystalline structure in order to have a photoelectric conversion function. The light absorbing layer may contain a compound other than a perovskite compound.

[0103] The light absorption layer may contain an organic-inorganic hybrid compound. An organic-inorganic hybrid compound refers to a compound containing an inorganic material and an organic material. Organic-inorganic hybrid compounds also include perovskite compounds, and solar cells using perovskite compounds are also called organic-inorganic hybrid solar cells. "Organic" typically refers to a material composed primarily of carbon. Note that graphite, graphene, carbon nanowires, carbon nanofibers, carbon nanotubes, and carbon materials such as carbon and carbon black that function as electrodes are not considered to be organic materials. In other words, organic refers to a material that contains carbon as one of its primary components, excluding the above-mentioned carbon materials such as graphite. "Inorganic" refers to a material that is not organic.

[0104] In the general formula (1), examples of the organic molecule represented by A include alkylamine, alkylammonium, and nitrogen-containing heterocyclic compounds. In the perovskite compound (1), the organic molecule represented by A may be only one type of organic molecule, or may be two or more types of organic molecules.

[0105] Examples of alkylamines include methylamine, ethylamine, propylamine, butylamine, pentylamine, hexylamine, dimethylamine, diethylamine, dipropylamine, dibutylamine, dipentylamine, dihexylamine, trimethylamine, triethylamine, tripropylamine, tributylamine, tripentylamine, trihexylamine, ethylmethylamine, methylpropylamine, butylmethylamine, methylpentylamine, hexylmethylamine, ethylpropylamine, and ethylbutylamine.

[0106] The alkylammonium is an ionized product of the alkylamine. Examples of the alkylammonium include methylammonium, ethylammonium, propylammonium, butylammonium, pentylammonium, hexylammonium, dimethylammonium, diethylammonium, dipropylammonium, dibutylammonium, dipentylammonium, dihexylammonium, trimethylammonium, triethylammonium, tripropylammonium, tributylammonium, tripentylammonium, trihexylammonium, ethylmethylammonium, methylpropylammonium, butylmethylammonium, methylpentylammonium, hexylmethylammonium, ethylpropylammonium, and ethylbutylammonium.

[0107] Examples of the nitrogen-containing heterocyclic compound include imidazole, azole, pyrrole, aziridine, azirine, azetidine, azeto, azole, imidazoline, and carbazole. The nitrogen-containing heterocyclic compound may be an ionized compound. As the ionized nitrogen-containing heterocyclic compound, phenethylammonium is preferred.

[0108] In the general formula (1), the organic molecule represented by A is preferably methylamine, ethylamine, propylamine, butylamine, pentylamine, hexylamine, methylammonium, ethylammonium, propylammonium, butylammonium, pentylammonium, or ethylammonium.

[0109] Fig. 10 is a schematic explanatory diagram showing the structure of a perovskite compound. As shown in Fig. 10, in perovskite compound 55, carboxyl groups 57b having carbon chains surround perovskite crystals 57a, thereby acting as a barrier layer and improving durability against water.

[0110] In the general formula (1), A may be an organic cation having an amino group, such as methylammonium ion (MA, CHNH), formamidium ion (FA, CH(NH), or guanidium ion (GA), or an inorganic cation, such as Cs, Rb, C, Pd, Pt, Ag, Au, Rh, or Ru. The perovskite compound may contain at least one of these cations.

[0111] B in the above general formula (1) is, for example, a lead ion (Pb2+) and a tin ion (S 2+), or a metal ion of an element in Group 14 (Group IV-B).

[0112] X in the above general formula (1) is a halide ion such as an iodine ion (I-), a bromine ion (Br), or a chlorine ion (Cl-). The perovskite compound can contain at least one of these halide ions.

[0113] Examples of perovskite compounds include CH3NH3PbI3 and FASnI3. Note that FA is CH(NH2)2.

[0114] 3A and 3B is a solar cell module with an MPLE (porous multilayer electrode) structure. Therefore, the terms used in relation to the solar cell module with an MPL structure will be explained based on the third embodiment.

[0115] With regard to the mesoporous insulating layer (porous layer) 18c, the term "porous" is also referred to as "porous" or "mesoporous," and includes the same or any of these. In addition, "porous" means that a perovskite compound can be contained in the voids.

[0116] The mesoporous insulating layer 18c that becomes the perovskite layer 17c is also called a spacer layer. The spacer layer is made of a porous material, preferably an insulator. Examples of materials for the spacer layer include metal oxides such as titanium oxide, zirconium dioxide, aluminum oxide, and silicon dioxide. The spacer layer preferably has a large number of voids with a size of 20 nm or more. In other words, the spacer layer is occupied by the metal oxide that constitutes it and the voids between the metal oxides. The spacer layer also has voids with a size of less than 20 nm.

[0117] Furthermore, a light absorbing layer that absorbs irradiated light is provided in the gaps in the spacer layer. In the spacer layer, it is preferable that the metal oxide particles are formed so as to be continuously connected.

[0118] The present disclosure can be implemented in various other forms without departing from its spirit or main features. Therefore, the above-described embodiments are merely examples and should not be interpreted as being limited. All modifications and variations within the scope of the claims of the present disclosure are within the scope of the present disclosure. [Industrial Applicability]

[0119] According to the present disclosure, it is possible to provide a solar cell module that can increase integration efficiency and improve reliability, and is therefore useful as a solar cell module. [Explanation of symbols]

[0120] 10a, 10b, 10c, 10e, 10f, 10g, 10h Solar cell modules 11a, 11b, 11c, 11e, 11g, 11h Substrate (base body) 13a,13a1,13a2,13b1,13b2,13c1,13c2,13e1,13e2,13g1,13g2,13h1,13h2 TCO (transparent electrode layer) 14a,14b,14c,14e,14h Lower ETL layer 15a,15b,15c,15g,15h Lower HTL layer 16 Perovskite precursor liquid 17a, 17b, 17c, 17e, 17g, 17h Perovskite layer (light absorbing layer) 18c Mesoporous insulating layer 19a,19b,19c,19g Upper HTL layer 20a,20b,20c,20e Upper ETL layer 22a,22b,22b1,22c,22c1,22e1,22e2,22g,22g1,22h,22h1 Upper electrode 24a, 24b, 24c P1 Scribe 25a, 25b P3 Scribe 26a, 27a, 28a, 29a, 26b, 27b, 28b, 29b, 26c, 27c, 28c, 29c, 26e, 27e, 28e, 29e, 26f, 27f, 28f, 29f, 26g, 27g, 28g, 29g, 26h, 27h, 28h, 29h Photoelectric conversion element 30a1, 30a2, 30b1, 30b2, 30c1, 30c2, 30f1, 30f2 Effective area 31 Organic thin film solar cells 32a,32b Transparent electrode 33a, 33b First buffer layer 34a,34b p layer 35 i layer 36a,36b n-layer 37a, 37b Second buffer layer 38 Metal electrode 40 boards 55 Perovskite Compounds 57a Perovskite crystal 57b Carboxy group 60a1, 60a2, 60b1, 60b2, 60c1, 60c2, 60f1, 60f2 Invalid area 71 First photoelectric conversion element 72 Second photoelectric conversion element 73 1st electrode 74 Light absorption layer 75 2nd electrode 76 Third electrode 77 1st ETL layer 78 2nd ETL layer 79 1st HTL layer 80 2nd HTL layer 81 First charge transport layer 82 Second charge transport layer 83 Third charge transport layer 84 4th charge transport layer 85a,85b Substrate (base body)

Claims

1. A first electrode; a second electrode and a third electrode facing the first electrode and spaced apart in a direction horizontal to a surface of the first electrode; A solar cell module including the first electrode, a light absorbing layer disposed between the second electrode and the third electrode, and a porous spacer layer that is porous, a first photoelectric conversion element including the first electrode, the light absorption layer, and the second electrode and a second photoelectric conversion element including the first electrode, the light absorption layer, and the third electrode have opposite polarities; the light absorption layer included in the first photoelectric conversion element and the light absorption layer included in the second photoelectric conversion element are continuous, the porous spacer layer contains a perovskite compound in voids, the light absorbing layer is located at least in the gap portion of the porous spacer layer in a thickness corresponding to the thickness of the porous spacer layer, the light absorbing layer is a perovskite layer, A solar cell module comprising: a gap region between the second electrode and the third electrode.

2. the porous spacer layer is a porous insulating layer; The solar cell module according to claim 1 , wherein the porous insulating layer contains zirconium dioxide, aluminum oxide, or silicon dioxide.

3. a porous electron transport layer is included between the first electrode and the second and third electrodes; The solar cell module according to claim 1 , wherein a perovskite compound is provided in the voids of the porous electron transport layer.

4. The solar cell module according to claim 3 , wherein the porous electron transport layer is formed of TiO 2 .

5. a substrate is disposed on second surfaces of the second electrode and the third electrode opposite to first surfaces facing the light absorbing layer; 5. The solar cell module according to claim 3, wherein the first photoelectric conversion element includes the substrate, a transparent electrode layer that is the second electrode on the substrate, the porous electron transport layer on the transparent electrode layer, the porous spacer layer on the porous electron transport layer, and a porous electrode layer that is the first electrode on the porous spacer layer.

6. A first electrode; a second electrode and a third electrode facing the first electrode and spaced apart in a direction horizontal to a surface of the first electrode; A solar cell module including the first electrode, a light absorbing layer disposed between the second electrode and the third electrode, and a porous spacer layer that is porous, a first photoelectric conversion element including the first electrode, the light absorbing layer, and the second electrode, the first photoelectric conversion element including at least one of a first charge transport layer capable of transporting first-type charges between the first electrode and the light absorbing layer, and a second charge transport layer capable of transporting second-type charges between the second electrode and the light absorbing layer; a second photoelectric conversion element including the first electrode, the light absorbing layer, and the third electrode, further comprising at least one of a third charge transport layer capable of transporting the second type charges between the first electrode and the light absorbing layer, and a fourth charge transport layer capable of transporting the first type charges between the third electrode and the light absorbing layer; the first type of charge is an electron or a hole, and the second type of charge is of the opposite type to the first type of charge; the light absorption layer included in the first photoelectric conversion element and the light absorption layer included in the second photoelectric conversion element are continuous, The porous spacer layer may contain a perovskite compound in voids, the light absorbing layer is a perovskite layer, the light absorbing layer is located at least in the gap portion of the porous spacer layer in a thickness corresponding to the thickness of the porous spacer layer, The solar cell module has a gap region between the second electrode and the third electrode.

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