Epitaxial reaction device

Abstract

The present application provides an epitaxial reaction device, which relates to the technical field of epitaxial layer process devices. The epitaxial reaction device includes a transport device and at least one reaction device, the reaction device including a high-temperature reaction chamber, a gas supply module, and an exhaust module, the high-temperature reaction chamber is used to provide the wafer with the necessary environmental conditions during processing, the gas supply module and the exhaust module are disposed opposite to the high-temperature reaction chamber, the gas supply module is used to supply reaction gas, the exhaust module is used to extract residual gas, the transport device is disposed in the high-temperature reaction chamber and is located on the same side as the gas supply module, and the transport device is used to load and unload the wafer. The epitaxial reaction device of the present application effectively solves the risk problem of by-products falling onto the wafer. In addition, the process of separating the transport device and the gas supply module during cleaning maintenance is omitted, which simplifies the process, reduces costs, ensures reliable operation, and improves production efficiency.

Description

[Technical Field]

[0001] This application relates to the technical field of epitaxial layer processing equipment, and more particularly to epitaxial reaction devices. [Background technology]

[0002] A conventional silicon carbide epitaxial reaction chamber includes an intake guide channel, a high-temperature reaction chamber, an exhaust system, and a wafer material removal mechanism, all connected in sequence. When processing the wafer's epitaxial layer, the material removal mechanism places the wafer to be processed in the high-temperature reaction chamber. Mixed reactant gases enter the high-temperature reaction chamber through the intake guide channel and react. The reactant gases chemically react with the wafer surface in the high-temperature reaction chamber to form a silicon carbide thin film, i.e., an epitaxial layer. The exhaust system removes any remaining gaseous precursors to maintain a constant gas pressure within the high-temperature reaction chamber. After processing is complete, the wafer is removed by the material removal mechanism.

[0003] Because there are temperature differences between the walls of the high-temperature reaction chamber that come into contact with the reactant gas, the reactant gas generates different crystalline silicon carbide in different temperature regions. As a result, chemical reactions occur between the high-temperature reaction chamber and the exhaust system during wafer epitaxial layer processing, generating dust-like by-products. Furthermore, each time wafer processing begins and ends, the material removal mechanism must pass through the dust-like by-product generation area to load and unload wafer tray substrates. After the high-temperature reaction chamber has been in operation for a long time, dust particles do not adhere well to the inner walls of the high-temperature reaction chamber, so dust particles and other foreign matter inevitably fall off during the loading and unloading process. The dust particles and other foreign matter that fall off during the loading process significantly reduce the quality of the processed wafers, and in severe cases, they are discarded. Furthermore, the dust particles that fall off during the unloading process require additional cleaning costs.

[0004] Furthermore, after long-term use, the inner walls of the high-temperature reaction chamber need to be cleaned. However, because the front and rear are blocked by the intake guide groove and the material removal mechanism, when removing and maintaining the chamber, a special mobile carriage must be designed to transport the entire material removal mechanism. This increases the complexity of installation and removal, increases the maintenance work, increases costs, and reduces reliability. Summary of the Invention [Problem to be solved by the invention]

[0005] The present application aims to provide an epitaxial reaction device to overcome the drawbacks present in the prior art. [Means for solving the problem]

[0006] In order to achieve the above object, the present invention provides an epitaxial reaction device for processing an epitaxial layer of a wafer, the epitaxial reaction device including a transfer device and at least one reaction device, The reaction apparatus includes a high-temperature reaction chamber, a gas supply module, and an exhaust module, the high-temperature reaction chamber is used to provide the wafer with the necessary environmental conditions during processing, the gas supply module and the exhaust module are both installed in the high-temperature reaction chamber, the gas supply module and the exhaust module are arranged opposite to each other, the gas supply module is used to supply reaction gas to the high-temperature reaction chamber, and the exhaust module is used to extract gas remaining after the reaction in the high-temperature reaction chamber; The transport device is provided in the high-temperature reaction chamber and is located on the same side as the gas supply module, and the transport device is used to transport the wafer into the high-temperature reaction chamber or to remove the wafer from the high-temperature reaction chamber.

[0007] In one possible embodiment, the high-temperature reaction chamber includes a reaction chamber body, a lift-up mechanism, and a tray; the reaction chamber body is connected to the gas supply module, the exhaust module, and the transfer device, the lift-up mechanism is provided in the reaction chamber main body, The tray is detachably provided at the lift-up end of the lift-up mechanism and is positioned within the reaction chamber body, and the tray is used to place the wafer thereon.

[0008] In one possible embodiment, the lift-up mechanism comprises: a lift-up execution unit; Lift-up drive unit and the lift-up execution unit is provided on a bottom plate of the reaction chamber body, the lift-up execution unit is hermetically fitted to the bottom plate, and the tray is detachably provided on the lift-up execution unit; The aforementioned Lift-up drive unit is connected to the lift-up execution unit, Lift-up drive unit can drive the lift-up execution unit to raise and lower the tray in the vertical direction.

[0009] In one possible embodiment, the lift-up execution unit includes a lift-up rod, a lift-up base, a bracket, and an extensible sealing sleeve, the sealing sleeve is attached to the bottom plate of the reaction chamber body and is sealingly fitted with the bottom plate, the lift-up base is attached to one end of the sealing sleeve away from the bottom plate and is sealingly fitted with the sealing sleeve, the lift-up rod is inserted into the sealing sleeve, one end of the lift-up rod is connected to the lift-up base and the other end is connected to the bracket, and the tray is detachably attached to the bracket.

[0010] In one possible embodiment, said sealing sleeve is a bellows.

[0011] In one possible embodiment, the lift-up mechanism includes a lift-up execution unit for driving the lift-up execution unit to rotate the tray. Rotation Drive Unit Further includes:

[0012] In one possible embodiment, a transport passage is provided between the transport device and the high-temperature reaction chamber, and a gas supply duct of the gas supply module is provided in the high-temperature reaction chamber, and the transport passage and the gas supply duct are distributed along a vertical direction.

[0013] In one possible embodiment, at least one gas introduction passage is provided in said gas supply duct.

[0014] In one possible embodiment, the transfer passage is provided with a gate valve that can close the transfer passage.

[0015] In one possible embodiment, the magnitude of the flow rate of the reactant gas supplied in the at least one gas inlet passage is adjusted individually.

[0016] In one possible embodiment, the gas supply duct is provided with three gas introduction passages, the width of the middle gas introduction passage is greater than the widths of the gas introduction passages on both sides, and the width of the middle gas introduction passage is equal to or greater than the diameter of the wafer.

[0017] In one possible embodiment, the transport device includes a transport chamber and a robot hand provided within the transport chamber, the transport chamber being connected to the high-temperature reaction chamber, and the transport chamber further being provided with at least one storage chamber for storing the wafer.

[0018] In one possible embodiment, a valve is provided in a passage that connects the storage chamber and the transfer chamber.

[0019] In one possible embodiment, the robot hand includes: a fixed base provided in the transport chamber; a robot arm module rotatably provided on the fixed base; and a gripping unit provided on the robot arm module; The robot arm module can drive the gripping unit for gripping the wafer into and out of the corresponding high temperature reaction chamber. [Effects of the Invention]

[0020] Compared with the prior art, the technical advantages of the present invention are as follows:

[0021] The epitaxial reaction device according to the present application is used for processing an epitaxial layer on a wafer, and the epitaxial reaction device includes a transfer device and at least one reaction device, the reaction device including a high-temperature reaction chamber, a gas supply module, and an exhaust module, the high-temperature reaction chamber is used to provide the wafer with the necessary environmental conditions during processing, the gas supply module and the exhaust module are both installed in the high-temperature reaction chamber and arranged opposite each other, the gas supply module is used to supply reaction gas to the high-temperature reaction chamber, the exhaust module is used to extract gas remaining after the reaction in the high-temperature reaction chamber, and a transfer device is installed in the high-temperature reaction chamber on the same side as the gas supply module, and the transfer device is used to transfer wafers into or remove wafers from the high-temperature reaction chamber. In the epitaxial reaction device according to the present application, the transfer device and the gas supply module are both installed on the same side of the high-temperature reaction chamber, so that there is no need to pass through an area of ​​dusty by-products when loading or unloading wafers, which effectively solves the risk of by-products falling on the wafers.

[0022] In addition, when performing cleaning and maintenance, there is no need to move either the conveying device or the gas supply module; the high-temperature reaction chamber can be directly removed and cleaned, eliminating the need to separate the conveying device and the gas supply module. This further simplifies the cleaning and maintenance process, reduces costs, makes operation more reliable, shortens maintenance man-hours, and indirectly improves production efficiency.

[0023] Furthermore, the present invention can avoid interference in the spatial positions of the transport device and the gas supply module through a rational layout of the transport device and the gas supply module. [Brief explanation of the drawings]

[0024] In order to more clearly explain the technical solutions in the embodiments of the present application, the following will briefly describe the drawings that need to be used in the embodiments, but the following drawings are only some embodiments of the present application and should not be regarded as limiting the scope, and those skilled in the art can obtain other related drawings based on these drawings without any creative work. [Figure 1] FIG. 1 is a diagram showing a first epitaxial reaction device according to an embodiment of the present invention, and is a three-dimensional schematic diagram showing the reaction chamber main body and the upper cover portion of the transfer chamber hidden. [Figure 2] FIG. 2 is a cross-sectional view showing a partial configuration in the AA direction in FIG. [Figure 3] FIG. 3 is a partial enlarged view of B in FIG. 2. [Figure 4] 2 is a schematic three-dimensional structural view showing a robot hand in the first epitaxial reaction device shown in FIG. 1. FIG. [Figure 5] FIG. 10 is a schematic three-dimensional structural view showing a second epitaxial reaction device according to an embodiment of the present invention. [Figure 6] FIG. 6 is a top view of the second epitaxial reaction device shown in FIG. 5. [Figure 7] FIG. 10 is a structural schematic diagram showing a third epitaxial reaction device according to an embodiment of the present invention. [Figure 8] 1 is a structural schematic diagram showing a lift-up mechanism according to an embodiment of the present invention; [Figure 9] FIG. 10 is a structural schematic diagram showing another lift-up mechanism according to an embodiment of the present invention. DETAILED DESCRIPTION OF THE INVENTION

[0025] The following describes in detail the embodiments of the present application, and the embodiments are illustrated in the drawings. The same or similar reference numerals always refer to the same or similar components, or components having the same or similar functions. The embodiments described below with reference to the drawings are illustrative and are used to interpret the present application, but should not be understood as limitations of the present application.

[0026] In the description of this application, the orientations or positional relationships indicated by terms such as "center," "longitudinal," "lateral," "length," "width," "thickness," "upper," "lower," "front," "rear," "left," "right," "vertical," "horizontal," "top," "bottom," "inner," "outer," "clockwise," "counterclockwise," "axial," "radial," and "circumferential" are based on the orientations or positional relationships shown in the drawings, and are intended merely to facilitate and simplify the description of this application, and do not indicate or imply that such devices or components necessarily have a specific orientation or are configured and operated in a specific orientation. Therefore, they should not be understood as limiting this application.

[0027] It should be noted that the terms "first" and "second" are for descriptive purposes only and should not be understood to indicate or imply relative importance or the number of such technical features. Thus, a feature qualified by "first" or "second" may explicitly or implicitly include one or more of the said features. In the description of this application, "plurality" means two or more unless otherwise specified.

[0028] In the description of this application, unless otherwise expressly specified or limited, the terms "attach," "connect," "couple," "fix," and the like should be understood in a broad sense. For example, they may refer to a fixed connection, a detachable connection, or integration, a mechanical connection, an electrical connection, a direct connection, an indirect connection via an intermediate medium, an internal communication between two components, or an interactive relationship between two components. Those skilled in the art can understand the specific meanings of the above terms in this application according to the specific circumstances.

[0029] In this application, unless otherwise clearly specified or limited, a first feature being "above" or "below" a second feature may mean that the first and second features are in direct contact or that the first and second features are in indirect contact via an intervening object. Furthermore, a first feature being "above," "above," and "on the upper surface" of a second feature may mean that the first feature is directly above or diagonally above the second feature, or simply that the first feature has a higher horizontal height than the second feature. A first feature being "below," "below," and "on the lower surface" of a second feature may mean that the first feature is directly below or diagonally below the second feature, or simply that the first feature has a lower horizontal height than the second feature.

[0030] Referring to Figures 1 and 2, the present embodiment provides an epitaxial reaction device used in processing an epitaxial layer of a wafer.

[0031] The epitaxial reaction device according to this embodiment includes a transfer apparatus 100 and at least one reactor 200, and each reactor 200 is connected to the transfer apparatus 100, i.e., the reactors 200 are arranged around the transfer apparatus 100. The reactors 200 are used to process an epitaxial layer of a wafer, and the transfer apparatus 100 can transfer wafers to be processed into each reactor 200, and can also take out wafers with processed epitaxial layers from each reactor 200.

[0032] Optionally, with joint reference to FIGS. 5, 6, and 7, the number of reactors 200 may be one, two, three, four, or any other number.

[0033] figure 1 Referring to FIG. 1, the reactor 200 further includes a high-temperature reaction chamber 210, a gas supply module 220, and an exhaust module 230, which can provide the environmental conditions required for wafer processing within the high-temperature reaction chamber 210.

[0034] The gas supply module 220 and the exhaust module 230 are both installed on the sides of the high-temperature reaction chamber 210. The gas supply module 220 and the exhaust module 230 are arranged opposite each other or adjacent to each other. In this embodiment, the gas supply module 220 and the exhaust module 230 are arranged opposite each other. When processing an epitaxial layer on a wafer, the gas supply module 220 is used to supply reactive gases into the high-temperature reaction chamber 210. The reactive gases deposit a thin film with excellent performance and few defects on the wafer surface under the environmental conditions provided by the high-temperature reaction chamber 210, which is called an epitaxial layer. After the epitaxial layer is processed, the exhaust module 230 extracts any gases remaining after the reaction in the high-temperature reaction chamber 210.

[0035] 1 and 2, the transfer device 100 is installed in the high-temperature reaction chamber 210, and the transfer device 100 and the gas supply module 220 are located on the same side of the high-temperature reaction chamber 210. When processing the epitaxial layer of a wafer, the transfer device 100 can transfer the wafer to be processed into the high-temperature reaction chamber 210, and can also remove the wafer with the processed epitaxial layer from the high-temperature reaction chamber 210.

[0036] Specifically, a transfer path 300 is provided between the transfer device 100 and the high-temperature reaction chamber 210, and the transfer device 100 transfers wafers through the transfer path 300.

[0037] The gas supply module 220 includes a gas supply subsystem (not shown) and a gas supply duct 221, the gas supply duct 221 is connected to the high temperature reaction chamber 210, the gas supply subsystem is connected to the gas supply duct 221, and the gas supply subsystem can supply reaction gas to the high temperature reaction chamber 210 through the gas supply duct 221.

[0038] In this embodiment, the transfer passage 300 and the gas supply duct 221 are arranged vertically, and a gate valve 400 is provided in the transfer passage 300. After the transfer device 100 completes transferring the wafer, the gate valve 400 can close the transfer passage 300 to prevent the reaction gas from entering the transfer device 100 through the transfer passage 300.

[0039] 2, the transfer passage 300 is disposed above the gas supply duct 221 to make a rational use of space and make the whole epitaxial reaction device more compact. Of course, in some embodiments, the transfer passage 300 may be located below the gas supply duct 221.

[0040] Furthermore, the gas supply duct 221 includes a horizontal section and a vertical section connected in sequence, and the horizontal section and the vertical section are connected in a curved manner, thereby reducing the horizontal space occupied by the gas supply duct 221, shortening the distance between the transport device 100 and the high-temperature reaction chamber 210, shortening the stroke, and further reducing the risk of contact with dust-like by-products when loading and unloading wafers.

[0041] The gate valve 400 includes a valve core plate 410 and Valve Drive Unit 420, and the valve core plate 410 is inserted into the conveying passage 300, Valve Drive Unit 420 is connected to the valve core plate 410, Valve Drive Unit 420 drives the valve core plate 410 to move relative to the conveying passage 300 to control the opening and closing of the conveying passage 300.

[0042] Selectively, Valve Drive Unit 420 is an air cylinder, a hydraulic cylinder, a linear motor, an electric push rod, or the like. Note that the above is merely an example and does not limit the scope of protection of the present application.

[0043] At least one gas introduction passage 222 is provided in the gas supply duct 221, and the outlet of the at least one gas introduction passage 222 is directed in the direction in which the wafer is placed in the high-temperature reaction chamber 210.

[0044] In this embodiment, the flow rate of the reaction gas supplied into each of the at least three gas introduction passages 222 can be individually adjusted so that the reaction gas is supplied more uniformly.

[0045] In the high-temperature reaction chamber 210, the distance between the wafer edge and the sidewall of the high-temperature reaction chamber 210 is short, so a boundary layer is formed when the reactant gas flows, causing the flow rate at the wafer edge to be slightly slower than that at the wafer center, resulting in poor thickness and doping uniformity of the deposited thin film. Therefore, by configuring the gas supply duct 221 as multiple gas introduction passages 222, the flow rate at different positions on the wafer can be more easily adjusted, resulting in a more uniform epitaxial layer and better adjustability of process parameters.

[0046] Furthermore, because the boundary layer area is small, in this embodiment, three gas introduction passages 222 are provided, and the width of the middle gas introduction passage 222 is larger than that of the gas introduction passages 222 on both sides and is equal to or larger than the diameter of the wafer. This ensures the supply of reaction gas flow through the middle gas introduction passage 222, while also making it easy to adjust the flow rate and volume of reaction gas in the sidewall boundary layer of the high-temperature reaction chamber 210. In addition, providing three gas introduction passages 222 makes it possible to adjust the flow rate and volume of gas flowing through the middle and both sides of the wafer, which is advantageous for obtaining a more uniform epitaxial layer.

[0047] Furthermore, process verification results showed that for small-sized wafers (e.g., 4-inch wafers), the width of the middle intake of the three gas introduction passages 222 has a significant effect on the thickness and doping concentration uniformity of the deposited epitaxial layer, and when the width is greater than the diameter of a 4-inch wafer, the quality of the thin film deposited on the wafer is higher, and changes in flow rate in the edge intake region do not substantially affect the quality of the deposited epitaxial layer. For this reason, when three gas introduction passages 222 are provided, they should be wide in the center and narrow at both ends.

[0048] The exhaust module 230 includes an exhaust pipe 231 and an exhaust subsystem (not shown) connected to the exhaust pipe 231, the exhaust pipe 231 being connected to the high-temperature reaction chamber 210, and the exhaust subsystem being capable of discharging gas remaining after the reaction in the high-temperature reaction chamber 210.

[0049] In the epitaxial reaction device of this embodiment, the transfer device 100 and the gas supply module 220 are both installed on the same side of the high-temperature reaction chamber 210, and a rational layout is used to avoid spatial interference between the transfer device 100 and the gas supply module 220. Furthermore, when loading and unloading wafers, there is no need to pass through the dusty by-product area, which effectively solves the problem of the risk of by-products falling on the wafers.

[0050] Furthermore, when performing cleaning and maintenance, there is no need to move either the conveying device 100 or the gas supply module 220; the high-temperature reaction chamber 210 can be directly removed and cleaned, eliminating the need to separate the conveying device 100 and the gas supply module 220. This further simplifies the cleaning and maintenance process, reduces costs, makes operation more reliable, shortens maintenance man-hours, and indirectly improves production efficiency.

[0051] 1 to 4, this embodiment further provides an epitaxial reaction device used for processing an epitaxial layer of a wafer. This embodiment is an improvement made based on the technology of the above embodiment, and the differences from the above embodiment are as follows:

[0052] 1 and 2, this embodiment will be described in detail by taking one reaction apparatus 200 as an example. Here, the high-temperature reaction chamber 210 includes a reaction chamber body 211, a lift-up mechanism 212, and a tray 213. The reaction chamber body 211 is connected to the gas supply duct 221 of the gas supply module 220, the exhaust pipe 231 of the exhaust module 230, and the transfer passage 300, respectively.

[0053] A reaction chamber 2110 is formed in the reaction chamber body 211, and a lift-up mechanism 212 is provided in the reaction chamber 2110 of the reaction chamber body 211. A tray 213 is detachably provided at a lift-up end of the lift-up mechanism 212, and the tray 213 is located in the reaction chamber body 211, and the tray 213 is used to place a wafer on it. The lift-up mechanism 212 can drive the tray 213 to move up and down within the reaction chamber 2110, so that the lift-up end can correspond to the outlet of the transfer path 300 or the gas supply duct 221, and further, the wafer placed on the tray 213 can also correspond to the outlet of the transfer path 300 or the gas supply duct 221.

[0054] 2, 3 and 8, the lift-up mechanism 212 includes a lift-up execution unit 2120 and Lift-up drive unit 2121, and the lift-up execution unit 2120 is provided on the bottom plate of the reaction chamber main body 211; Lift-up drive unit 2121 can drive the lift-up execution unit 2120 to raise and lower the tray 213 in the reaction chamber 2110. Lift-up drive unit 2121 may be provided on the bottom plate of the reaction chamber main body 211, or may of course be provided on an external frame (not shown).

[0055] The lift-up execution unit 2120 includes a lift-up rod 2120a, a lift-up base 2120b, a bracket 2120c, and an expandable sealing sleeve 2120d, which is installed on the bottom plate of the reaction chamber body 211, and a sealing member is used to achieve a sealed fit between the sealing sleeve 2120d and the bottom plate of the reaction chamber body 211, and the sealing sleeve 2120d is located outside the reaction chamber 2110. The lift-up base 2120b is provided at one end of the sealed sleeve 2120d that is away from the bottom plate of the reaction chamber main body 211, the lift-up base 2120b is hermetically fitted with the sealed sleeve 2120d, the lift-up rod 2120a is inserted into the sealed sleeve 2120d, one end of the lift-up rod 2120a is connected to the lift-up base 2120b and the other end is connected to the bracket 2120c, and the tray 213 is detachably attached to the bracket 2120c.

[0056] Second Lift-up drive unit The output end of 2121 is connected to the lift-up base 2120b, Lift-up drive unit The output end of 2121 can output a reciprocating linear motion, which allows Lift-up drive unit The lift-up base 2120b, the lift-up rod 2120a, and the bracket 2120c are driven by the lift-up unit 2121 to move up and down. The sealing sleeve 2120d is flexible, so that the sealing sleeve 2120d can adapt to the lift-up and down movement of the lift-up execution unit 2120 by expanding and contracting.

[0057] In addition, both ends of the sealing sleeve 2120d are sealed to prevent external gas from leaking into the reaction chamber 2110 or the reaction gas inside the reaction chamber 2110 from leaking out, thereby ensuring the sealing of the reaction chamber 2110 and providing stable process conditions for the wafer.

[0058] Optionally, the sealing sleeve 2120d is a bellows.

[0059] Optionally, in this embodiment, Lift-up drive unit2121 is an air cylinder, a hydraulic cylinder, a linear motor, an electric push rod, a cam mechanism, a crank slider mechanism, etc. Note that the above is merely an explanation by way of example and does not limit the scope of protection of the present application.

[0060] 1 and 4, the transfer device 100 includes a transfer chamber 110 and a robot hand 120 provided in the transfer chamber 110. The transfer chamber 110 is connected to a reaction chamber main body 211 via a transfer passage 300. The robot hand 120 is provided in the transfer chamber 110 and is connected to a reaction chamber main body 211 via the transfer passage 300 so as to take in and out silicon carbide wafers. Retract from within the reaction chamber 2110 or In the reaction chamber 2110 Susumu You can enter.

[0061] Furthermore, at least one storage chamber 111 for storing wafers is further provided on one side of the transfer chamber 110, and the storage chamber 111 is connected to the transfer chamber 110. In this embodiment, the number of storage chambers 111 is two, and the two storage chambers 111 are used to store unprocessed or processed wafers. This allows the robot hand 120 to load and unload wafers into and from the two storage chambers 111.

[0062] In some embodiments, the number of the accommodation chambers 111 may be three, four, five, or other numbers. Note that the above is merely an example and does not limit the scope of protection of the present application. A valve may also be provided in the passage connecting the accommodation chamber 111 and the transfer chamber 110. That is, when loading an unprocessed wafer into the accommodation chamber 111 or removing a processed wafer from the accommodation chamber 111, the valve is first closed to block the passage between the accommodation chamber 111 and the transfer chamber 110, and the pressure inside the accommodation chamber 111 is restored to atmospheric pressure. Then, the door of the accommodation chamber 111 is opened and the operation is performed. When the operation is completed, the accommodation chamber 111 returns to the same vacuum or pressure state as the transfer chamber 110.

[0063] When the robot hand 120 enters the two accommodation chambers 111 to load or unload wafers, the valve opens first. After the loading or unloading operation is completed and the robot hand 120 leaves the accommodation chamber 111, the valve closes, blocking the passage between the accommodation chamber 111 and the transfer chamber 110 to ensure a vacuum state in the transfer chamber 110, effectively preventing the intrusion of external contamination sources, and improving the uniformity of the epitaxial layer thickness and doping concentration of the processed wafers, thereby increasing the yield rate.

[0064] Specifically, the robot hand 120 includes a fixed base 121 provided in the transfer chamber 110 , a robot arm module 122 , and a grasping grip unit 123 .

[0065] The robot arm module 122 includes an active arm unit 1221 rotatably mounted on the fixed base 121, a driven arm unit 1222 rotatably mounted on the active arm unit 1221, and a cantilever unit 1223 rotatably mounted on the driven arm unit 1222. The grasping grip unit 123 is disposed at one end of the cantilever unit 1223 remote from the driven arm assembly 1222.

[0066] The active arm unit 1221, the driven arm unit 1222 and the cantilever unit 1223 are all driven to rotate by a motor, and the rotation plane of the cantilever unit 1223 is parallel to the plane on which the conveying path 300 is located. In this embodiment, the active arm unit 1221, the driven arm unit 1222 and the cantilever unit 1223 are rotatably interlocked, so that the cantilever unit 1223 can drive the gripper unit 123 to perform a linear telescopic movement on the conveying path 300.

[0067] Optionally, the motor is a stepper motor or a servo motor.

[0068] As a result, the gripper units 123 are driven to perform linear extension and retraction motion, thereby allowing the gripper units 123 used for removing or placing wafers to enter or exit the corresponding high-temperature reaction chambers 210. In this embodiment, when the transfer device 100 transfers a wafer, the wafer is placed on a tray 213, and the wafer is clamped by the gripper units 123 and transferred together. As can be understood, when the transfer device 100 transfers a wafer, the lift-up mechanism 212 operates to raise and lower the bracket 2120c, aligning the bracket 2120c with the transfer path 300 and maintaining it on the same plane, and simultaneously the gate valve 400 opens, allowing the robot hand 120 to easily remove or place the tray 213 with the wafer loaded thereon. When processing the epitaxial layer of the wafer, the gate valve 400 is closed, and the lift-up mechanism 212 is operated to raise and lower the bracket 2120c, so that the bracket 2120c faces the gas supply duct 221 and is held on the same plane as the gas outlet of the gas supply duct 221.

[0069] 2, 3 and 8, this embodiment further provides an epitaxial reaction device that is applied to processing an epitaxial layer of a wafer. This embodiment is an improvement made based on the technology of the above embodiment, and compared with the above embodiment, the differences are as follows:

[0070] In this embodiment, the lift-up mechanism 212 includes a lift-up execution unit 2120 and Lift-up drive unit 2121 and Rotation Drive Unit The lift-up execution unit 2120 is provided on the bottom plate of the reaction chamber body 211. Lift-up drive unit is provided on the bottom plate of the reaction chamber main body 211, Rotation Drive Unit 2122 is Lift-up drive unit 2121 and connected to the lift-up base 2120b. Lift-up drive unit 2121 can drive the lift-up execution unit 2120 to raise and lower the tray 213 in the reaction chamber 2110; Rotation Drive Unit2122 can drive and rotate the lift-up rod 2120a.

[0071] in particular, Lift-up drive unit The reaction chamber main body 2121 includes a first drive motor 2121a, a lifting plate 2121b, a nut 2121c, a lifting screw rod 2121d, and a guide rod 2121e, the first drive motor 2121a being located below the bottom plate of the reaction chamber main body 211, one end of the lifting screw rod 2121d being rotatably connected to the bottom plate of the reaction chamber main body 211, and the other end being connected to the output end of the first drive motor 2121a. The lifting plate 2121b is attached to the lifting screw rod 2121d via a nut 2121c, which is screwed onto the lifting screw rod 2121d, so that the first drive motor 2121a outputs rotational motion, thereby driving the lifting plate 2121b to move up and down along the axial direction of the lifting screw rod 2121d. One end of the guide rod 2121e is attached to the bottom plate of the reaction chamber body 211, and the other end passes through the lifting plate 2121b, with a sliding fit between the guide rod 2121e and the lifting plate 2121b. The installation of the guide rod 2121e can limit the rotation of the lifting plate 2121b, while also providing a guiding effect for the lifting plate 2121b to ensure the stability of the lifting.

[0072] Rotation Drive Unit Lift-up base 2121b includes second drive motor 2122a, mechanical transmission mechanism 2122b, rotating base 2122c, and connecting shaft 2122d. Second drive motor 2122a is attached to lift-up plate 2121b, and rotating base 2122c is rotatably mounted on lift-up plate 2121b. Second drive motor 2122a and rotating base 2122c are power-transmitted and connected via mechanical transmission mechanism 2122b, and second drive motor 2122a can drive rotating base 2122c via mechanical transmission mechanism 2122b to rotate it relative to lift-up plate 2121b. Connecting shaft 2122d is eccentrically mounted on rotating base 2122c, and the upper end of connecting shaft 2122d is connected to lift-up base 2121b.

[0073] Furthermore, the mechanical transmission mechanism 2122b can be selected from a sprocket transmission mechanism, a pulley transmission structure, a gear transmission mechanism, a worm gear transmission mechanism, etc. Note that the above are merely examples and do not limit the scope of protection of the present application.

[0074] Furthermore, in this embodiment, the lift-up rod 2120a and the bottom plate of the reaction chamber main body 211 are fitted together via a linear bearing 2120e, which reduces friction when the lift-up rod 2120a moves up and down. one end The lift-up rod 2120a is curved in a direction offset from the axial direction, and the length of the straight rod portion of the lift-up rod 2120a is equal to or greater than the maximum lift stroke. The sealing sleeve 2120d is a bellows that can fit the shape of the lift-up rod 2120a. The lift-up rod 2120a is connected to the lift base 2120b, and the rotation center line of the lift-up rod 2120a overlaps with the rotation center line of the rotating platform 2122c.

[0075] Thus, when the turntable 2122c rotates, the connecting shaft 2122d drives the lift-up base 2120b and the lift-up rod 2120a to rotate, and the lift-up rod 2120a drives the tray 213 on the bracket 2120c to rotate, with the bellows having a certain flexibility and self-adapting during the swinging process. Therefore, by integrating the functions of lifting and rotating, the epitaxial reaction device of this embodiment can rotate the wafer on the tray 213 during processing of the wafer's epitaxial layer, thereby making the wafer surface temperature distribution more uniform and further improving the uniformity of the thickness and doping concentration of the thin film during epitaxial growth.

[0076] 2, 3, 8 and 9, this embodiment further provides an epitaxial reaction device applied to processing an epitaxial layer of a wafer. This embodiment is an improvement made based on the technology of the above embodiment, and compared with the above embodiment, the differences are as follows:

[0077] In this embodiment, the lift base 2120b in the lift-up execution unit 2120 Lift-up drive unit 2121b in the lifting plate 2121b directly replaced, Lift-up drive unit The lifting plate 2121b in 2121 is omitted to simplify the structure.

[0078] Rotational Drive Unit 2122 The reaction chamber main body 211 includes a second drive motor 2122a, a mechanical transmission mechanism 2122b, and a magnetic fluid seal 2122e. The lift-up rod 2120a penetrates the lift-up base 2120b and is rotatably engaged with the lift base 2120b via the magnetic fluid seal 2122e, which can prevent leakage from occurring in the reaction chamber main body 211. The second drive motor 2122a is connected to the lift-up rod 2120a exposed outside the magnetic fluid seal 2122e via the mechanical transmission mechanism 2122b, and can drive and rotate the lift-up rod 2120a, the bracket 2120c, and the tray 213 attached to the bracket 2120c via the mechanical transmission mechanism 2122b.

[0079] Furthermore, as in the above embodiment, the mechanical transmission mechanism 2122b can be selected from a sprocket transmission mechanism, a pulley transmission structure, a gear transmission mechanism, a worm gear transmission mechanism, etc. Note that the above is merely an explanation using examples, and does not limit the scope of protection of the present application.

[0080] In the description herein, references such as "one embodiment," "some embodiments," "exemplary," "particular examples," or "some examples" mean that the specific features, structures, materials, or characteristics described in connection with this embodiment or example are included in at least one embodiment or example of the present application. In this specification, the use of the term "exemplary" does not necessarily refer to the same embodiment or example. Furthermore, the specific features, structures, materials, or characteristics described may be combined as appropriate in any one or more embodiments or examples. Furthermore, unless mutually inconsistent, those skilled in the art may combine and combine different embodiments or examples described herein, as well as features associated with different embodiments or examples.

[0081] Although the embodiments of the present application have been shown and described above, the above embodiments are illustrative and should not be understood as limiting the present application, and it should be understood that those skilled in the art can make changes, modifications, substitutions and variations to the above embodiments within the scope of the present application. [Explanation of symbols]

[0082] 100 conveying device, 110 conveying chamber, 111 accommodation chamber, 120 robot hand, 121 fixed base, 122 robot arm module, 1221 active arm unit, 1222 driven arm unit, 1223 cantilever unit, 123 gripping grip unit, 200 reaction device, 210 high temperature reaction chamber, 211 reaction chamber body, 2110 reaction chamber, 212 lift-up mechanism, 2120 lift-up execution unit, 2120a lift-up rod, 2120b lift-up base, 2120c bracket, 2120d sealing sleeve, 2121 Lift-up drive unit , 2121a first drive motor, 2121b lifting plate, 2121c nut, 2121d lifting screw rod, 2121e guide rod, 2122 Rotation Drive Unit, 2122a second drive motor, 2122b mechanical transmission mechanism, 2122c rotating table, 2122d connecting shaft, 2122e magnetic fluid seal, 213 tray, 220 gas supply module, 221 gas supply duct, 222 gas introduction passage, 230 exhaust module, 231 exhaust pipe, 300 conveying passage, 400 gate valve, 410 valve core plate, 420 Valve Drive Unit

Claims

1. An epitaxial reaction device including a transfer device and at least one reaction device, the epitaxial reaction device being adapted to process an epitaxial layer of a wafer, The reaction apparatus includes a high-temperature reaction chamber, a gas supply module, and an exhaust module, the high-temperature reaction chamber is used to provide the wafer with the necessary environmental conditions during processing, the gas supply module and the exhaust module are both installed in the high-temperature reaction chamber, the gas supply module and the exhaust module are arranged opposite to each other, the gas supply module is used to supply reaction gas to the high-temperature reaction chamber, and the exhaust module is used to extract gas remaining after the reaction in the high-temperature reaction chamber; the transport device is provided in the high-temperature reaction chamber and is located on the same side as the gas supply module, the transport device being used to transport the wafer into the high-temperature reaction chamber or remove the wafer from the high-temperature reaction chamber; the high-temperature reaction chamber includes a reaction chamber body, a lift-up mechanism, and a tray; the lift-up mechanism is provided in the reaction chamber body and includes a lift-up execution unit and a lift-up drive unit; The lift-up execution unit includes a lift-up rod, a lift-up base, and a bracket; one end of the lift-up rod is connected to the lift-up base and the other end is connected to the bracket, the one end of the lift-up rod that is away from the bottom plate of the reaction chamber body is curved in a direction deviated from the axial direction, the lift-up rod and the bottom plate of the reaction chamber body are fitted together via a linear bearing, the tray is detachably attached to the bracket, is located within the reaction chamber body, and is used to place the wafer thereon; the lift-up driving unit is connected to the lift-up execution unit, and the lift-up driving unit is used to drive the lift-up execution unit to lift and lower the tray along a vertical direction; Epitaxial reaction device.

2. The reaction chamber body is connected to the gas supply module, the exhaust module, and the transfer device, respectively.

10. The epitaxial reactor device of claim 1.

3. The lift-up execution unit is sealed and fitted with the bottom plate.

3. The epitaxial reactor device of claim 2.

4. the lift-up execution unit further includes an expandable sealing sleeve, the sealing sleeve being disposed on a bottom plate of the reaction chamber body and sealingly engaging with the bottom plate; the lift-up base being disposed at one end of the sealing sleeve away from the bottom plate and sealingly engaging with the sealing sleeve; and the lift-up rod being inserted into the sealing sleeve; 4. The epitaxial reactor device of claim 3.

5. The sealing sleeve is a bellows.

5. The epitaxial reactor device of claim 4.

6. The lift-up mechanism further includes a rotation drive unit for driving the lift-up execution unit to rotate the tray.

4. The epitaxial reactor device of claim 3.

7. a transfer passage is provided between the transfer device and the high-temperature reaction chamber, and a gas supply duct of the gas supply module is provided in the high-temperature reaction chamber; 10. The epitaxial reactor device of claim 1.

8. The conveying passage and the gas supply duct are distributed along a vertical direction.

8. The epitaxial reactor device of claim 7.

9. At least one gas introduction passage is provided in the gas supply duct.

8. The epitaxial reactor device of claim 7.

10. a gate valve capable of closing the transfer passage is provided in the transfer passage; 8. The epitaxial reactor device of claim 7.

11. The magnitude of the flow rate of the reaction gas supplied into the at least one gas introduction passage is individually adjusted.

10. The epitaxial reactor device of claim 9.

12. the gas supply duct is provided with three gas introduction passages, the width of the intermediate gas introduction passage is larger than the widths of the gas introduction passages on both sides, and the width of the intermediate gas introduction passage is equal to or larger than the diameter of the wafer; 10. The epitaxial reactor device of claim 9.

13. the transfer device includes a transfer chamber and a robot hand provided in the transfer chamber, the transfer chamber being connected to the high-temperature reaction chamber; The epitaxial reaction device according to any one of claims 1 to 12.

14. The transfer chamber is further provided with at least one storage chamber for storing the wafer.

14. The epitaxial reactor device of claim 13.

15. a valve is provided in a passage that connects the accommodation chamber and the transfer chamber; 15. The epitaxial reactor device of claim 14.

16. The robot hand a fixed base provided in the transfer chamber; a robot arm module rotatably mounted on the fixed base; a gripping unit provided on the robot arm module, the robot arm module is used to drive the gripping unit for gripping the wafer into and out of the corresponding high-temperature reaction chamber; 14. The epitaxial reactor device of claim 13.

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