Microwave system for microwave-assisted surface chemical annealing in ALD processes using microwave radiation energy

Abstract

A microwave system for use in a microwave assisted thermal atomic layer deposition system is disclosed, the microwave system comprising: at least one microwave generator configured to output at least one microwave signal; at least one waveguide assembly in communication with the at least one microwave generator and configured to receive the microwave signal; one or more isolators disposed within the waveguide assembly and configured to reduce or eliminate backscattering of the microwave signal from the waveguide assembly to the at least one microwave generator; at least one conditioning device disposed within the waveguide assembly and configured to receive the microwave signal from the isolator and condition the microwave signal; and at least one microwave delivery device in communication with the waveguide assembly and configured to direct at least a portion of the microwave signal to at least one process chamber of the microwave assisted thermal atomic layer deposition system.

Description

[Technical Field]

[0001] (Related Applications) This application claims priority to U.S. Provisional Patent Application No. 63 / 145,178, filed February 3, 2021, entitled "Apparatus and Methods for Microwave-Assisted Surface Chemistry Annealing of ALD Processes Utilizing Microwave Radiation Energy," the entire disclosure of which is incorporated herein by reference.

[0002] (Technical field) SUMMARY OF THE INVENTION Embodiments of the present invention relate to systems and methods for utilizing microwave radiant energy to improve annealing during atomic layer deposition processes. [Background technology]

[0003] Semiconductor manufacturing incorporates a wide variety of processing techniques. Atomic layer deposition (ALD) is one such manufacturing process. ALD processes are commonly used in the fabrication of semiconductor devices, the synthesis of nanomaterials, and are frequently used to treat or otherwise modify dielectric films to yield dense dielectric, low-k (dielectric constant) films on materials. ALD thin film deposition techniques are typically based on the sequential use of gas-phase chemical processes in which multiple precursors (also called "reactants") are reacted sequentially with the surface of a material to slowly deposit multilayer thin films on the surface of the material.

[0004] Thermal ALD is achieved using conventional rapid thermal annealing, which is based on optical radiation heat treatment. While conventional rapid thermal ALD processes have proven useful in the past, many drawbacks have been identified. For example, the temperature of the processed wafer rises to the annealing temperature during rapid thermal ALD. As a result, processing times tend to be longer than desired due to the substrate heating and cooling during processing. Furthermore, achieving denser dielectric, low-k layers has proven difficult. Summary of the Invention [Problem to be solved by the invention]

[0005] In view of the foregoing, there is a continuing need for microwave-assisted ALD annealing systems and methods that can provide high processing throughput compared to conventional rapid thermal ALD systems and processes. [Means for solving the problem]

[0006] Various embodiments of microwave-assisted thermal ALD processing systems are disclosed herein. In one embodiment, the microwave-assisted thermal ALD processing system disclosed herein utilizes microwave radiant energy during the deposition process, thereby reducing or eliminating processing time associated with heating and cooling substrates before, during, and after processing, thereby improving processing throughput. Furthermore, the systems and methods disclosed herein can be configured to achieve denser films or layers applied to substrates than those currently available. In addition, embodiments of the microwave-assisted thermal ALD processing system disclosed herein enable the formation of denser layers of dielectric, low-k materials on substrates.

[0007] In one embodiment, the present application discloses a microwave system for use with a microwave-assisted thermal atomic layer deposition system. More specifically, the microwave system can include at least one microwave generator configured to output at least one microwave signal. At least one waveguide assembly in communication with the at least one microwave generator can be configured to receive the microwave signal. One or more isolators disposed within the waveguide assembly can be configured to reduce or eliminate backscattering of the microwave signal from the waveguide assembly to the microwave generator, thereby reducing the possibility of damage to the microwave generator. At least one adjustment device disposed within the waveguide assembly can be configured to receive the microwave signal from the isolator and adjust the microwave signal. The adjustment system can include an automatic adjustment system or, alternatively, a manual adjustment system. Finally, at least one microwave delivery device in communication with the waveguide assembly can be configured to direct at least a portion of the microwave signal to at least one processing chamber of the microwave-assisted thermal atomic layer deposition system.

[0008] In another embodiment, the present application is directed to a waveguide-based microwave system for use with a microwave-assisted thermal atomic layer deposition system. Specifically, the microwave system can include at least one microwave generator configured to output at least one microwave signal. At least one waveguide assembly in communication with the at least one microwave generator can be configured to receive the microwave signal. One or more isolators disposed within the waveguide assembly can be configured to reduce or eliminate backscattering of the microwave signal from the waveguide assembly to the microwave generator, thereby reducing potential damage to the microwave generator. At least one adjustment device disposed within the waveguide assembly can be configured to receive the microwave signal from the isolator and adjust the microwave signal. The adjustment system can include an automatic adjustment system or, alternatively, a manual adjustment system. Finally, at least one waveguide in communication with the at least one waveguide assembly can be configured to direct at least a portion of the microwave signal to a process chamber of the microwave-assisted thermal atomic layer deposition system.

[0009] In yet another embodiment, the present application is directed to a helical antenna-based microwave system for use with a microwave-assisted thermal atomic layer deposition system. More specifically, the microwave system can include at least one microwave generator configured to output at least one microwave signal. At least one waveguide assembly in communication with the at least one microwave generator can be configured to receive the microwave signal. One or more isolators disposed within the waveguide assembly can be configured to reduce or eliminate backscattering of the microwave signal from the waveguide assembly to the microwave generator, thereby reducing the possibility of damage to the microwave generator. At least one adjustment device disposed within the waveguide assembly can be configured to receive the microwave signal from the isolator and adjust the microwave signal. The adjustment system can include an automatic adjustment system or, alternatively, a manual adjustment system. Finally, at least one helical antenna in communication with the at least one waveguide assembly can be configured to direct at least a portion of the microwave signal to a process chamber of the microwave-assisted thermal atomic layer deposition system.

[0010] Other features and advantages of the microwave system and method of use for use in a microwave assisted thermal device will become more apparent from consideration of the following detailed description.

[0011] The novel aspects of the microwave system and method of use for use in a microwave assisted thermal device will become more apparent from consideration of the following drawings. [Brief explanation of the drawings]

[0012] [Figure 1] FIG. 1 shows a cross-sectional top view of one embodiment of a conventional thermal ALD processing system. [Figure 2] FIG. 2 shows an elevated perspective view of a vessel coupled to a platen vessel used in the thermal ALD processing system shown in FIG. [Figure 3]FIG. 1 illustrates a top cross-sectional view of one embodiment of a microwave-assisted thermal ALD processing system having at least one microwave waveguide disposed above a process vessel. [Figure 4] FIG. 4 illustrates a side perspective view of one embodiment of a microwave waveguide positioned above the process vessel of the microwave-assisted thermal ALD processing system shown in FIG. [Figure 5] FIG. 4 illustrates a top view of another embodiment of a process vessel of the microwave-assisted thermal ALD processing system shown in FIG. 3 having two microwave waveguides disposed thereon. [Figure 6] FIG. 1 shows a cross-sectional plan view of one embodiment of a microwave-assisted thermal ALD processing system having at least one microwave antenna positioned above a process vessel. [Figure 7] FIG. 7 illustrates an elevated perspective view of one embodiment of a helical microwave antenna for use with the microwave-assisted thermal ALD processing system shown in FIG. [Figure 8] 8 illustrates a cross-sectional side plan view of one embodiment of the microwave antenna shown in FIG. 7 positioned within the chamber of the microwave-assisted thermal ALD processing system shown in FIG. 6. [Figure 9] FIG. 1 shows an elevational cross-sectional view of an alternative embodiment of a microwave-assisted thermal ALD processing system that utilizes two microwave antennas to provide uniform microwave radiant energy for a substrate positioned within a platen chamber. [Figure 10] FIG. 1 shows a block diagram of one embodiment of a microwave system for use in a microwave-assisted thermal ALD processing system. DETAILED DESCRIPTION OF THE INVENTION

[0013] The present application is directed to various microwave systems and methods for improved thermal ALD processing by incorporating various microwave generation devices and processes. In one embodiment, the present application discloses a system and method for microwave-assisted thermal ALD processing that applies microwave radiant energy to a deposited layer of material after each successive layer is deposited on a substrate, thereby selectively increasing the temperature of the deposited film while reducing or eliminating the time associated with thermal ramping associated with heating the substrate to which the film is applied. As a result, applicants have produced higher quality films, films with higher dielectric density, and low dielectric constant films, which offer broader use across the thermal ALD application spectrum. In one embodiment, the microwave-assisted ALD thermal annealing system and method disclosed herein can be used in combination with plasma processing of various substrates. In another embodiment, the microwave-assisted ALD thermal annealing system and method disclosed herein need not be used in combination with plasma processing. Rather, any variety of post-ALD anneals can be used with the present system and method.

[0014] 1 and 2 show various views of elements used to construct an embodiment of a conventional thermal ALD processing chamber for use in atomic layer deposition of materials onto a substrate. As shown, the ALD system 1 includes a chamber 3 in fluid communication with a plasma source 5. Further, a chamber receiving area 9 can be formed within the chamber 3. Additionally, the chamber 3 can have one or more ports 11 formed thereon. The chamber receiving area 9 can be sized to receive a vessel 13 therein. In one embodiment, the vessel 13 comprises a conical vessel formed from a first vessel body 15 and a second vessel body 19. As shown, the first vessel body 15 defines a first vessel passageway 17 therein. Similarly, the second vessel body 19 defines a second vessel passageway 21 in fluid communication with the first vessel passageway 17.

[0015] 1 and 2 , at least one platen vessel 7 can be coupled to and in fluid communication with vessel 13. Platen vessel 7 defines a platen vessel chamber 23 having a platen fixture 25 configured to receive one or more substrates, coupons, or similar specimens therein or thereon. During use, a substrate to be processed is placed on platen fixture 25 located within platen vessel chamber 23. A vacuum is created within the chamber, and the substrate is heated to a desired temperature. Multiple reactants are then sequentially introduced into platen vessel chamber 23, resulting in the formation of multiple atomic layers on the substrate. Once the desired number and / or thickness of layers have been formed on the substrate, plasma generated within plasma source 5 is directed into vessel 13 via inlet 29 formed on vessel 13 and traverses vessel 13. The plasma can then be incident on a substrate placed on platen fixture 25 located within platen vessel chamber 23. Once processing is complete, the coated substrate must be allowed to cool slowly to a handling temperature before it can be removed from the chamber, which significantly reduces the throughput of the processing system.

[0016] FIGS. 3-5 illustrate an embodiment of a novel microwave-assisted thermal ALD processing system. As shown, the microwave-assisted thermal ALD system 40 includes a chamber 42 having at least one plasma source 44 coupled thereto or otherwise in fluid communication therewith. Similar to the conventional thermal ALD systems described above, the chamber 42 of the ALD system 40 illustrated in FIGS. 3-5 defines at least one chamber receiving area 48 configured to receive one or more process vessels 52 therein. Additionally, at least one of the chamber 42 and / or vessels 52 can be coupled to at least one platen vessel 46 and configured to receive and support at least one substrate, platen, or substrate therein. In the illustrated embodiment, the vessel 52 comprises a conical vessel. Optionally, the vessel 52 can be formed in any of a variety of shapes, configurations, cross-sectional dimensions, etc. Furthermore, the vessel 52 can be fabricated from any of a variety of materials, including, but not limited to, stainless steel, various alloys, various inert materials, ceramics, composite materials, glass, minerals, etc. In one embodiment, at least one of chamber 42, vessel 52, and / or platen chamber may be sized to receive one or more 100 mm or smaller wafer substrates therein. Optionally, at least one of chamber 42, vessel 52, and / or platen chamber may be sized to receive one or more 100 mm or larger wafer substrates therein.

[0017] In the illustrated embodiment, the vessel 52 includes a first vessel body 54 and at least a second vessel body 58. Any number of vessel bodies can be used to form the vessel 52. Optionally, the vessel 52 can be formed of a unitary construction. At least one vessel passageway 60 can be formed within the vessel 52. Unlike the conventional thermal ALD systems described above, the microwave-assisted thermal ALD system depicted in FIGS. 3-5 includes at least one microwave waveguide device 56 configured to direct microwave radiant energy from a microwave generator (not shown) to a substrate in communication with the vessel passageway 60 formed within the vessel 52. For example, in the embodiment depicted in FIGS. 3 and 4 , a single microwave waveguide device 56 is disposed on or in communication with the first vessel body 54. Alternatively, FIG. 5 shows a schematic diagram of an elevational cross-sectional view of an alternative embodiment of the vessel 52 having two microwave waveguide devices 56, 56′ disposed on the vessel 52. In the illustrated embodiment, the microwave waveguide devices 56, 56′ are positioned orthogonally to one another, although one skilled in the art will understand that the microwave waveguide devices 56, 56′ can be positioned with any relationship to one another. Thus, as shown, the first microwave waveguide device 56 can be configured to apply a first microwave radiant energy field 63 to a substrate being processed. Similarly, the microwave waveguide device 56′ can be configured to apply at least a second microwave radiant energy field 63′ to a substrate being processed by the microwave-assisted thermal ALD system 40. For example, the mode of the first radiant field 63 can be a TE11 mode in a desired plane (e.g., the r&φ plane), while the mode of the second radiant field 63′ can be a TE11 mode in a different plane (e.g., a vector in the r&φ plane). Optionally, at least one of the first and second microwave radiant energy fields 63, 63′ can be linearly polarized, circularly polarized, and / or elliptically polarized. Furthermore, in one embodiment, the first and second microwave radiant energy fields 63, 63' share the same polarization. In another embodiment, the first and second microwave radiant energy fields 63, 63' have different polarizations.Those skilled in the art will appreciate that the modes of the first and second radiant energy fields 63, 63′ can be the same or different. For example, exemplary modes include TE11, TM01, etc. Additionally, microwave waveguide device 56 and / or 56′ (if present) can be configured to provide microwave radiant energy at any of a variety of frequencies. Exemplary frequencies can range from about 200 megahertz (200 MHz) to about 10,000 megahertz (10,000 MHz) or higher. In another embodiment, the frequency can range from about 5,700 megahertz (5700 MHz) to about 5,800 megahertz (5800 MHz). Optionally, the frequency can range from about 1,000 megahertz (1000 MHz) to about 4,000 megahertz (4000 MHz) or higher. Optionally, the frequency may range from about two four hundred megahertz (2400 MHz) to about two five hundred megahertz (2500 MHz). Furthermore, one skilled in the art will appreciate that the frequencies of the first and second radiant energy fields 63, 63' may be the same or different.

[0018] 3 and 4 show various views of an embodiment of a microwave waveguide apparatus 56 disposed on or otherwise coupled to the container 52. As shown, the microwave waveguide apparatus 56 may include a first microwave waveguide body 74 and a second microwave waveguide body 76 coupled to the container 52. In one embodiment, the microwave waveguide apparatus 56 may form a rectangular shape. Optionally, the waveguide apparatus 56 may form a cylindrical shape. Those skilled in the art will appreciate that the waveguide apparatus 56 may be formed in any of a variety of shapes, sizes, cross-sectional dimensions, etc. One or more microwave waveguide connectors 78 may be coupled to a location on at least one of the first microwave waveguide body 74 and / or the second microwave waveguide body 76. In one embodiment, the connectors 78 may be configured to couple the microwave waveguide apparatus 56 to at least one microwave energy source (not shown). For example, the connector can be coupled to one or more conduits 186 that communicate with at least one microwave generator 162 (see FIG. 10 ). Thus, the port 50 formed in the chamber 42 can be configured to allow one or more conduits, cables, or similar devices to traverse therethrough. For example, in one embodiment, the port 50 includes at least one hermetic connector-like device (not shown). In the illustrated embodiment, the microwave waveguide device 56 is positioned proximate to a vessel inlet 70 formed in the vessel 52. Those skilled in the art will appreciate that the one or more microwave waveguide devices 56 included in the system can be positioned anywhere on or proximate to the vessel 52. As shown in FIGS. 3 and 4 , at least one radiation choke or similar filtering device 80 can be positioned between the vessel inlet 70 and the microwave waveguide device 56. In one embodiment, the radiation choke 80 can be configured to prevent unwanted flow of radiation or signals generated within the microwave waveguide device 56 from entering the plasma source 44.

[0019] 3 , at least one platen receptacle 46 can be coupled to or otherwise in communication with a receptacle 52 disposed within the chamber 42. In the illustrated embodiment, the platen receptacle 46 is coupled to the receptacle 52 external to the chamber 42. Optionally, the platen receptacle 46 can be coupled to the receptacle 52 within the chamber 42. In one embodiment, the platen receptacle 46 defines at least one platen receptacle chamber 62 therein, the platen receptacle chamber 62 configured to accommodate one or more platen fixtures 64 capable of supporting one or more substrates or samples to be processed thereon or therein. One or more outlets 66 can be formed on the platen receptacle 46.

[0020] During a processing procedure, one or more substrates or specimens (not shown) can be placed on and / or secured to the platen fixture 64 within the platen receptacle chamber 62 of the platen receptacle 46. The platen receptacle 46 is then configured to sealingly engage the receptacle 52. For example, the platen receptacle 46 may be airtightly engaged with the receptacle 52, although one skilled in the art will appreciate that the platen receptacle 46 may be coupled to the receptacle 52 in any number of different ways. A vacuum may be applied to at least one of the chamber 42, the receptacle chamber 62, and / or the platen receptacle 46. One or more layers of reactants may then be selectively deposited on the substrate. In one embodiment, after each layer of material is sequentially deposited on the substrate, microwave energy emitted from the microwave waveguide device 56 and / or 56′ may be activated, thereby selectively and controllably heating the newly deposited layer formed on the substrate. In one embodiment, microwave radiant energy is applied uniformly to the newly deposited layer. In another embodiment, microwave radiant energy is applied non-uniformly to the newly deposited layer. In the illustrated embodiment, the plasma generated by plasma source 44 can be directed from vessel passage 60 to a substrate positioned on platen fixture 64. Those skilled in the art will appreciate that any of a variety of alternative post-ALD annealing processes may be performed on the substrate. As such, the systems and methods disclosed herein should not be construed as limited to plasma-based processing systems.

[0021] 6-9 show various views of another embodiment of a microwave-assisted thermal ALD processing system. As shown, similar to the above embodiment, the processing system 100 includes at least one chamber 102 disposed between or adjacent to at least one plasma source 104 and at least one platen chamber 106. The chamber 102 defines at least one chamber receiving area 108 sized to receive at least one vessel 112 therein. As shown, the vessel 112 may comprise a conical vessel formed from a first vessel body 114 and at least a second vessel body 116. Optionally, the vessel 112 may be constructed as a single unit. As with the above embodiment, the processing vessel 112 may be formed in any of a variety of shapes and configurations. At least one vessel passageway 118 may be formed within the vessel 112, the vessel passageway 118 being in fluid communication with an inlet 122 coupled to or adjacent to the plasma source 104 and the platen chamber 106. As with the previous embodiments, the various elements of the microwave-assisted thermal ALD processing system 100, including the chamber 102, the platen fixture 106, and / or the vessel 112, can be fabricated from any of a variety of materials. For example, the vessel 112 can be fabricated from stainless steel. Similarly, the chamber 102 can be fabricated from stainless steel.

[0022] As shown, at least one antenna can be disposed within the chamber receiving area 108. For example, in the embodiment of the microwave-assisted thermal ALD processing system 100 shown in FIGS. 6-8 , a single antenna 120 is used to project microwave radiant energy onto a substrate (not shown) within the platen vessel 106. FIG. 9 illustrates an alternative embodiment of the microwave-assisted thermal ALD processing system 100 including a first antenna 120 and at least a second antenna 120′ disposed within the chamber receiving area 108. Those skilled in the art will appreciate that any number and type of antennas can be used in the system. Optionally, the vessel 112 can include at least one window or similar opening, thereby allowing radiation from the antenna 120 to traverse the vessel 112. For example, FIGS. 6 and 7 illustrate an embodiment of the vessel 112 having a window 117 formed thereon or therein. Alternatively, FIG. 9 illustrates an embodiment of the vessel 112 formed without a window formed therein. In another embodiment, the container 112 need not include the first container body 114, thereby allowing microwave radiation energy from the antenna 120 to traverse the chamber receiving area 108 and enter the container 112 through the second container body 116.

[0023] 7 and 8 show more detailed views of an embodiment of an antenna 120 and a coupling system useful for positioning one or more antennas in the chamber receiving area 108. As shown in FIG. 7, in one embodiment, the antenna 120 includes at least one radiation conduit 140. In one embodiment, the radiation conduit 140 is configured with a substantially helical shape. For example, in the illustrated embodiment, the radiation conduit 140 is configured with a five-turn helical winding. Optionally, the radiation conduit 140 can be configured with a three-turn helical winding, a four-turn helical winding, a five-turn helical winding, a six-turn helical winding, or a seven-turn or more helical winding. The wire diameter of the radiation conduit 140 can range from about 0.005 inch to about 1.0 inch. In one particular embodiment, the wire diameter of the radiation conduit 140 ranges from about 0.125 inch to about 0.250 inch, although one skilled in the art will appreciate that various wire diameters can be used. Optionally, any number of turns can be employed to form the helical winding. In one embodiment, the turn diameter D can range from about 0.5 inches to about 4.0 inches. Optionally, the turn diameter D can be about 1.54 inches. Optionally, the radiating conduit 140 can be manufactured with various coil spacings. In one embodiment, the coil spacing S ranges from about 0.50 inches to about 2.5 inches. In another embodiment, the coil spacing S ranges from about 1 inch to about 1.5 inches. Optionally, the coil spacing S ranges from about 1.20 inches. Similarly, the radiating coil 140 can be manufactured with any desired coil pitch angle. For example, in one embodiment, the coil pitch angle is about 14 degrees, although any coil pitch angle can be used. Optionally, the antenna 120 can have left-hand or right-hand circular polarization. Those skilled in the art will appreciate that antennas can be formed in any of a variety of alternative configurations and / or shapes. Exemplary configurations include, but are not limited to, helical, conical, parabolic, horn, leaky wave, array antennas, etc. In one embodiment, the antenna is configured to generate a microwave radiant energy pattern in at least one direction selected to efficiently and selectively regulate the temperature of the substrate.

[0024] Referring again to FIG. 7 , the radiation conduit 140 may be coupled to or otherwise communicate with at least one conductive ground plate 142. For example, the conductive ground plate 142 may have lateral dimensions of about 1.0 to 5 inches, with a thickness ranging from about 0.05 inches to about 3.0 inches. For example, in one embodiment, the conductive ground plate 142 has a substantially square shape with lateral dimensions of about 3.5 inches by 3.5 inches, with a thickness of about 0.125 inches, although one skilled in the art will appreciate that the conductive ground plate 142 may be manufactured in any number of sizes, shapes, and configurations. Furthermore, at least one of the radiation conduit 140 and the ground plate 142 may be coupled to or communicate with at least one connector 144 that enables the antenna to be coupled to at least one external power source, microwave source, and / or the like. In the illustrated embodiment, the radiation conduit 140 may be disposed within at least one enclosure 146 formed by at least one enclosure device 148. In one embodiment, the enclosure 148 can be configured to protect various elements (e.g., the radiation conduit 140) from reactants and plasma that may be present in the chamber 102. In one embodiment, the enclosure 146 is fabricated from quartz. In another embodiment, the enclosure is fabricated from borosilicate, ceramic, and sapphire materials, or some other dielectric material that is transparent to microwave radiation energy.

[0025] As shown in FIG. 8 , the at least one antenna 120 can be supported within the chamber receiving area 108 by one or more antenna mounts 136 coupled to the chamber 102. In the illustrated embodiment, the antenna mount 136 is coupled to the chamber housing 134, although one skilled in the art will appreciate that any variety of antenna mounts can be used. Additionally, at least one conduit and / or cable 130 can be coupled to a connector 144 formed on the antenna 120 (see FIG. 7 ). The cable 130 can traverse the chamber receiving area 108 and exit the chamber 102 via at least one port connector 132 disposed on at least one port 110 formed on the chamber 102.

[0026] 6-9 , the platen receptacle 106 can define at least one platen receptacle chamber 124. Similar to the above embodiment, the at least one platen fixture 126 is configured to receive and support at least one substrate (not shown) at a desired position within the platen receptacle chamber 124. For example, in one embodiment, the platen fixture 126 is positioned to provide at least a portion of the radiant energy emitted from the one or more antennas 120 contained within the chamber 102. In one embodiment, at least one of the chamber 102, the receptacle 112, and / or the platen chamber 124 can be sized to receive one or more 100 mm or smaller wafer substrates therein. Optionally, at least one of the chamber 102, the receptacle 112, and / or the platen chamber 124 can be sized to receive one or more 100 mm or larger wafer substrates therein. During use, at least one substrate (not shown) can be placed on or otherwise secured to the platen fixture 126. The platen vessel 106 is then coupled to a vessel 112 disposed within the chamber receiving area 108. In one embodiment, the platen vessel 106 is coupled to the vessel 112 in an airtight relationship, although one skilled in the art will appreciate that the platen vessel 106 can be coupled to the vessel 112 in a variety of ways using a variety of coupling devices or fixtures. Once the chamber 102 is sealed, a vacuum is applied to at least one of the chamber receiving area 108 and / or the vessel passageway 118. Two or more reactants can then be sequentially applied to the substrate, resulting in the formation of at least one atomic layer on the surface of the substrate. Microwave radiation energy from the antenna 120 can be used to maintain and / or adjust the temperature of the layer deposited on the substrate during the deposition process. For example, microwave radiation energy from the antenna 120 can be selectively applied to a thin film newly deposited on the substrate. Thereafter, any number of microwave radiation cycles can be selectively applied to the substrate following any number of film deposition processes. In one embodiment, microwave radiation energy is applied uniformly to the substrate.In another embodiment, microwave radiant energy is applied non-uniformly to the substrate. Optionally, once a desired layer thickness and / or density is deposited, the introduction of reactants can be stopped and at least one plasma emitted from plasma source 104 can be directed through reservoir passage 118 to the substrate in platen chamber 106. However, those skilled in the art will appreciate that any of a variety of alternative post-ALD annealing processes can be performed on the substrate. As such, the systems and methods disclosed herein should not be construed as limited to plasma-based processing systems.

[0027] FIG. 10 shows a schematic diagram of one embodiment of a microwave system for use in microwave-assisted surface chemical annealing of an ALD process. As shown, microwave system 160 includes at least one microwave generator 162. In one embodiment, microwave generator 162 includes a solid-state microwave generator, although one skilled in the art would understand that any of a variety of microwave generators can be used with the system. In one embodiment, microwave generator 162 is configured to output microwave energy or a microwave signal having a power ranging from about 10 watts (10 W) to about 10,000 watts (10 kW). In another embodiment, the power ranges from about 500 watts (500 W) to about 2000 watts (2 kW). In another embodiment, the power is about 1000 watts (1 kW). Thus, as shown in FIG. 10, microwave generator 162 can be cooled or otherwise thermally managed. For example, the microwave generator 162 may include at least one fluid port or conduit 164 that allows for the use of one or more fluids to control the temperature of the microwave generator 162 .

[0028] Referring again to FIG. 10 , at least one conduit 166 is coupled to or otherwise in communication with the microwave generator 162 and configured to transport microwave energy from the microwave generator 162. For example, the conduit 166 may include at least one coaxial cable, although various conduits may be used, including, but not limited to, a waveguide. The conduit 166 may be coupled to one or more waveguide assemblies 168 via at least one transition member 170. In one embodiment, the transition member 170 may be configured to receive microwave energy from the conduit 166 (e.g., a coaxial cable) and couple the incoming energy into the waveguide assembly 170. Optionally, the transition member 170 may include one or more filters, polarizers, wave plates, and may include one or more quarter-wave (¼λ) devices therein. At least one isolator 172 may be coupled to or in communication with the waveguide assembly 168. The isolator 172 may be configured to prevent backscattering or reflection of microwave energy from the waveguide assembly 168 back to the microwave generator 162 .

[0029] 10, the waveguide assembly 168 can include one or more tuning systems or devices 174 in communication with the isolator 172, thereby allowing for selectable variation of the frequency of the microwave energy. In one embodiment, the tuning system 174 includes an automatic tuning system that allows at least one processor (not shown) to vary at least one characteristic of the microwave energy from the microwave generator 162, including, for example, frequency, impedance, etc. For example, the tuning system 174 can include a SmartMatch Intelligent Microwave Matching Unit manufactured by MKS Instruments, although one skilled in the art will appreciate that any of a variety of systems capable of autonomously monitoring and tuning a microwave signal can be used.

[0030] In another embodiment, adjustment system 176 includes a manual adjustment system that allows a user to manually vary at least one characteristic of the microwave energy. Optionally, adjustment system 176 can be configured to operate in coordination with microwave generator 162. In another embodiment, adjustment system 176 can be configured to operate independently of microwave generator 162. Additionally, waveguide assembly 168 can include one or more detectors or sensors or directional couplers 174 therein. Exemplary detectors include, but are not limited to, precision power detectors, RF power detectors, and the like.

[0031] Referring again to FIG. 10 , one or more optional devices or subsystems 178 can be included within microwave system 160. For example, in the illustrated embodiment, optional systems or devices 178 are located within or adjacent to waveguide assembly 168. Exemplary optional systems 178 include, without limitation, noise filters, signal choppers, sensors, attenuators, power combiners, meters, polarizers, processors, control systems, thermal management systems, and the like. Optional systems 178 that can optionally be used external to the waveguide assembly include processors, controllers, filters, thermal management systems, coolant sources, and the like. Additionally, at least one waveguide-to-coaxial transition device 184 can be used to couple microwave energy from waveguide assembly 168 to at least one coaxial conduit 186 that is coupled to various embodiments of microwave delivery devices 188 located within the microwave-assisted thermal ALD system. Exemplary microwave transmission devices 188 include, but are not limited to, waveguide devices 56, 56' (see FIGS. 3-5) or antenna 120 (see FIGS. 6-9).

[0032] The embodiments disclosed herein are illustrative of the principles of the present invention. Other variations may be employed which fall within the scope of the invention. Accordingly, the apparatus disclosed in this application is not limited to that precisely as shown and described herein. [Explanation of symbols]

[0033] 160 Microwave System 162 Microwave Generator 164 Conduit 166 Conduit 170 Transitional Member 172 Isolator 174 Directional coupler 176 Regulating systems or devices 178 Subsystems 184 Transition Device 186 Conduit 188 Microwave transmitter

Claims

1. 1. A microwave system for use in a microwave-assisted thermal atomic layer deposition system, comprising: a first microwave generator configured to output a first microwave signal; a second microwave generator configured to output a second microwave signal; a first waveguide assembly in communication with the first microwave generator and configured to receive the first microwave signal; a second waveguide assembly in communication with the second microwave generator and configured to receive the second microwave signal; a first isolator disposed within the first waveguide assembly and configured to reduce or eliminate backscattering of the first microwave signal from the first waveguide assembly to the first microwave generator; a second isolator disposed within the second waveguide assembly and configured to reduce or eliminate backscattering of the second microwave signal from the second waveguide assembly to the second microwave generator; and a first adjusting device disposed within the first waveguide assembly, the first adjusting device configured to receive the first microwave signal from the first isolator and adjust the first microwave signal; and a second adjusting device disposed within the second waveguide assembly, the second adjusting device configured to receive the second microwave signal from the second isolator and adjust the second microwave signal; and a first microwave delivery device configured to emit the first microwave signal, the first microwave delivery device in communication with the first waveguide assembly and configured to direct at least a portion of the first microwave signal to at least one processing chamber of the microwave-assisted thermal atomic layer deposition system; a second microwave delivery device configured to emit the second microwave signal, the second microwave delivery device in communication with the second waveguide assembly and configured to direct at least a portion of the second microwave signal to the at least one processing chamber of the microwave-assisted thermal atomic layer deposition system; Equipped with the frequency of the first microwave signal emitted from the first microwave transmitting device and the frequency of the second microwave signal emitted from the second microwave transmitting device are different frequencies; Microwave systems.

2. A microwave system as described in claim 1, wherein at least one of the first microwave generator and the second microwave generator is configured to output at least one microwave signal having a power of 10 W to 10 kW.

3. A microwave system as described in claim 1, wherein at least one of the first microwave generator and the second microwave generator is configured to output at least one microwave signal having a power of 500 W to 2 kW.

4. A microwave system as described in claim 1, wherein at least one of the first microwave generator and the second microwave generator is configured to output at least one microwave signal frequency in the range of 1000 MHz to 4000 MHz.

5. A microwave system as described in claim 1, wherein at least one of the first microwave generator and the second microwave generator is configured to output at least one microwave signal frequency in the range of 5700 MHz to 5800 MHz.

6. The microwave system of claim 1, wherein at least one of the first microwave generator and the second microwave generator is configured to output at least one microwave signal frequency in the range of 2400 MHz to 2500 MHz.

7. A microwave system as described in claim 1, wherein at least one of the first adjustment device and the second adjustment device includes an automatic adjustment device configured to autonomously adjust the first microwave signal or the second microwave signal.

8. 8. The microwave system of claim 7, further comprising at least one detector disposed in at least one of the first waveguide assembly and the second waveguide assembly, the at least one detector communicating with the first adjustment device or the second adjustment device.

9. The microwave system of claim 8 , wherein the at least one detection device includes a precision power detector (PPD).

10. A microwave system as described in claim 1, wherein at least one of the first adjustment device and the second adjustment device includes a manual adjustment device configured to enable adjustment of the first microwave signal or the second microwave signal.

11. A microwave system as described in claim 10, further comprising at least one directional coupler communicating with at least one of the first adjustment device and the second adjustment device.

12. A microwave system as described in claim 1, wherein at least one of the first microwave transmitting device and the second microwave transmitting device is configured to emit a linearly polarized microwave signal.

13. A microwave system as described in claim 1, wherein at least one of the first microwave transmitting device and the second microwave transmitting device is configured to emit a circularly polarized microwave signal.

14. A microwave system as described in claim 1, wherein at least one of the first microwave transmitting device and the second microwave transmitting device is configured to emit an elliptically polarized microwave signal.

15. A microwave system as described in claim 1, wherein at least one of the first microwave transmitting device and the second microwave transmitting device is configured to emit a microwave signal having a TE11 mode.

16. A microwave system as described in claim 1, wherein at least one of the first microwave transmitting device and the second microwave transmitting device is configured to emit a microwave signal having a TM01 mode.

17. 2. The microwave system according to claim 1, wherein the polarization of the first microwave signal emitted from the first microwave transmitting device and the polarization of the second microwave signal emitted from the second microwave transmitting device are the same.

18. 2. The microwave system according to claim 1, wherein a polarization of the first microwave signal emitted from the first microwave transmitting device and a polarization of the second microwave signal emitted from the second microwave transmitting device are different polarizations.

19. The microwave system of claim 1, wherein at least one of the first microwave transmitting device and the second microwave transmitting device is coupled to the at least one processing chamber and has at least one waveguide communicating with the at least one processing chamber, and the at least one waveguide is configured to receive the first microwave signal or the second microwave signal from the first microwave generator or the second microwave generator and to guide the first microwave signal or the second microwave signal to the at least one processing chamber.

20. The microwave system of claim 1, wherein at least one of the first microwave transmitting device and the second microwave transmitting device comprises an antenna having at least one spiral-shaped radiation conduit communicating with the at least one processing chamber, the antenna being configured to receive the first microwave signal or the second microwave signal from the first microwave generator or the second microwave generator and to guide the first microwave signal or the second microwave signal to the at least one processing chamber.

21. 21. The microwave system of claim 20, wherein the antenna is a helical antenna.

22. 21. The microwave system of claim 20, wherein each of said antennas is an antenna selected from the group consisting of a conical antenna, a parabolic antenna, a horn antenna, a leaky waveform antenna, and an array antenna.

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