Metallized Films and Film Capacitors

Abstract

The metallized film of the present invention comprises a dielectric film and a metal vapor-deposited electrode formed on the surface of the dielectric film, wherein the metal vapor-deposited electrode is arranged such that an insulating margin extending in the longitudinal direction of the dielectric film is provided at one end in the width direction of the dielectric film, the metal vapor-deposited electrode has a plurality of protrusions facing the insulating margin at an end facing the insulating margin, and the plurality of protrusions have flat portions along the extension direction of the insulating margin.

Description

[Technical Field]

[0001] The present invention relates to metallized films and film capacitors. [Background technology]

[0002] Patent Document 1 describes a metallized film in which a metal layer is formed on at least one surface of a polymer film, and a metallized film capacitor constructed from the metallized film. The metallized film described in Patent Document 1 has a portion on one end of one surface of the metallized film where no metal layer is formed, and the boundary between the portion where the metal layer is formed and the portion where no metal layer is formed is wavy. [Prior art documents] [Patent documents]

[0003] [Patent Document 1] Japanese Patent Application Laid-Open No. 2009-188001 Summary of the Invention [Problem to be solved by the invention]

[0004] The metallized film and metallized film capacitor described in Patent Document 1 still have room for improvement in terms of suppressing short circuits while suppressing a decrease in capacitance.

[0005] The present invention provides a metallized film and a film capacitor that can suppress short circuits while suppressing a decrease in capacitance. [Means for solving the problem]

[0006] The metallized film according to one embodiment of the present invention comprises: a dielectric film; a vapor-deposited metal electrode formed on the surface of the dielectric film; Equipped with the vapor-deposited metal electrode is disposed at one end in the width direction of the dielectric film so as to provide an insulating margin extending in the longitudinal direction of the dielectric film; the vapor-deposited metal electrode has, at an end facing the insulating margin, a plurality of protrusions directed toward the insulating margin; The plurality of protrusions have flat portions that are flat along the direction in which the insulating margin extends.

[0007] A film capacitor according to one aspect of the present invention comprises: a roll made of the metallized film; a pair of end electrodes disposed on both ends of the metallized film; Equipped with. [Effects of the Invention]

[0008] According to the present invention, a metallized film and a film capacitor are provided that can suppress short circuits while suppressing a decrease in capacitance. [Brief explanation of the drawings]

[0009] [Figure 1] FIG. 1 is a perspective view showing a film capacitor according to a first embodiment of the present invention; [Figure 2A] 1 is a schematic diagram showing a metallized film according to a first embodiment of the present invention; [Figure 2B] Enlarged view of area E1 in Figure 2A. [Figure 3A] FIG. 10 is a diagram showing the results of a simulation of the amount of displacement of a metallized film having a vapor-deposited metal electrode without a protrusion. [Figure 3B] Enlarged view of region R1 in Figure 3A. [Figure 3C] FIG. 10 is a diagram showing the results of a simulation of the amount of displacement of a metallized film having a vapor-deposited metal electrode with protrusions formed thereon. [Figure 3D] Enlarged view of region R2 in Figure 3C [Figure 4A] 2 is a schematic cross-sectional view of the film capacitor of FIG. 1; [Figure 4B]4B is a schematic cross-sectional view showing the state in which the metal vapor deposition electrodes and the dielectric film of the film capacitor 1 of FIG. 4A have shrunk. [Figure 5] 1 is a table showing the results of the change in the effective electrode width before and after the application of voltage in film capacitors formed using the metallized films of the comparative example and the example. [Figure 6] Schematic diagram showing a metallized film according to a first modification of the first embodiment. [Figure 7] 1 is a table showing the results of the change in the effective electrode width before and after applying a voltage in a film capacitor formed using the metallized film of Modification 1. [Figure 8A] Schematic diagram showing a metallized film according to Modification 2 of Embodiment 1. [Figure 8B] Enlarged view of area E2 in Figure 8A [Figure 9] 10 is a table showing the results of the change in the effective electrode width before and after applying a voltage in a film capacitor formed using the metallized film of Modification 2. [Figure 10A] Schematic diagram showing a metallized film according to a third modification of the first embodiment. [Figure 10B] Enlarged view of area E3 in FIG. 10A. [Figure 11] 10 is a table showing the results of the change in the effective electrode width before and after applying a voltage in a film capacitor formed using the metallized film of Modification 3. DETAILED DESCRIPTION OF THE INVENTION

[0010] (Background to the invention) Film capacitors are known that are formed by winding or laminating metallized films with metal vapor deposition electrodes formed on the surface of a dielectric film. When a voltage is applied to a film capacitor, the temperature of the metal vapor deposition electrodes formed on the surface of the dielectric film rises. When the heated metal vapor deposition electrodes cool, they shrink, creating gaps between the laminated dielectric films, resulting in a decrease in the capacitance of the film capacitor. Another problem is that the gaps between the dielectric films cause the dielectric films to vibrate when a voltage is applied, resulting in a so-called "noise."

[0011] In the metallized film and metallized film capacitor described in Patent Document 1, the boundary between the metal layer and non-metal layer portions of the polymer film is formed in a corrugated shape to reduce "squeak noise." However, when the boundary is corrugated, the electric field concentrates at the peaks of the corrugations due to the edge effect. The peaks of the corrugations are spaced closer to the end electrodes of the film capacitor than the other portions. This poses a problem of short circuits occurring between the peaks of the corrugations of the metal layer, where the electric field is concentrated, and the end electrodes.

[0012] The present inventor(s) have investigated a metallized film and a film capacitor that can suppress the occurrence of short circuits while suppressing a decrease in the capacitance of the film capacitor, and have arrived at the following invention.

[0013] A first embodiment of the present invention will be described below with reference to the accompanying drawings. In each drawing, each element is shown exaggerated for ease of explanation.

[0014] (Embodiment 1) [Overall configuration] Fig. 1 is a perspective view showing a film capacitor 1 according to a first embodiment of the present invention. Fig. 2A is a schematic diagram showing a metallized film 11 according to the first embodiment of the present invention. Fig. 2B is an enlarged view of region E1 in Fig. 2A.

[0015] 1, film capacitor 1 includes a wound body 10 and a pair of end electrodes 20 formed on both ends of wound body 10. Wound body 10 is formed by stacking or winding a metallized film 11, which will be described later with reference to FIGS. 2A and 2B. The pair of end electrodes 20 is formed by spraying a metal such as aluminum or zinc onto both ends of wound body 10.

[0016] As shown in FIG. 2A, metallized film 11 is a film in which vapor-deposited metal electrode 13 is formed on the surface of dielectric film 12.

[0017] Dielectric film 12 is formed of a plastic film containing a thermoplastic resin such as polyethylene terephthalate, polypropylene, polyphenylene sulfide, or polyethylene naphthalate, or a plastic film containing a thermosetting resin such as a cured product obtained by reacting a hydroxyl group (OH group) in the first organic material with an isocyanate group (NCO group) in the second organic material. Vapor-deposited metal electrode 13 is formed of a metal such as aluminum or zinc.

[0018] Vapor-deposited metal electrode 13 is an electrode connected to first end surface electrode 21 on one side of end surface electrodes 20 of film capacitor 1. Vapor-deposited metal electrode 13 is arranged at one end 12a in width direction W of dielectric film 12 so as to provide insulating margin 16 extending in longitudinal direction L of dielectric film 12. Insulating margin 16 is the portion of the surface of dielectric film 12 on which vapor-deposited metal electrode 13 is not formed. Insulating margin 16 is provided for the purpose of preventing contact and short-circuiting between end surface electrode 20 and second end surface electrode 22 on the other side.

[0019] End 13a of vapor-deposited metal electrode 13 facing insulating margin 16 has multiple protrusions 14 that protrude toward insulating margin 16, i.e., in protrusion direction P shown in FIG. 2A . That is, end 13a of vapor-deposited metal electrode 13 facing insulating margin 16 has an uneven shape. In this embodiment, protrusions 14 are rectangular. As shown in FIG. 2B , each of multiple protrusions 14 has a flat portion 14a that is flat along the direction in which insulating margin 16 extends (longitudinal direction L). Flat portion 14a is the portion of protrusion 14 that faces insulating margin 16.

[0020] In this embodiment, the multiple protrusions 14 are arranged at intervals along the longitudinal direction L. The intervals between the multiple protrusions 14 may be equal or may be different. In this embodiment, as shown in FIG. 2A, the multiple protrusions 14 are arranged at equal intervals. In other words, the multiple protrusions 14 are arranged at intervals cl.

[0021] In this embodiment, the flat portions 14a of the respective protrusions 14 all have the same length d1. The length d1 of the flat portions 14a can be, for example, 0.7 mm or more and 1.5 mm or less along the longitudinal direction L of the dielectric film 12. The length d1 of the flat portions 14a does not have to be the same, and may vary within a range of 0.7 mm or more and 1.5 mm or less.

[0022] FIG. 3A shows the results of a simulation of the amount of displacement of metallized film 11 having vapor deposited metal electrode 13 without protrusions 14. FIG. 3B is an enlarged view of region R1 in FIG. 3A. FIG. 3C shows the results of a simulation of the amount of displacement of metallized film 11 having vapor deposited metal electrode 13 with protrusions 14. FIG. 3D is an enlarged view of region R2 in FIG. 3C. In FIGS. 3A to 3D, vapor deposited metal electrode 13 is formed on the right side of the drawing, and insulating margin 16 is provided on the left side of the drawing. FIGS. 3A to 3D show the results of a simulation of the amount of displacement of metallized film 11 with respect to temperature when a voltage is applied to metallized film 11.

[0023] The simulation was performed using Femtet (registered trademark), an analytical simulation software made by Murata Software Co., Ltd. The calculation item was an applied analysis that calculates the amount of displacement relative to temperature, and the mode was a steady-state analysis, with calculations performed for cases where the temperature was changed from -40°C to 125°C.

[0024] 3A and 3B, when no protrusion 14 is provided at the end of vapor-deposited metal electrode 13 facing insulating margin 16, the displacement of metallized film 11 is V0. This is because heat concentrates at end 13a of vapor-deposited metal electrode 13, causing a temperature rise. If the end of vapor-deposited metal electrode 13 is formed straight, heat is likely to concentrate at end 13a of vapor-deposited metal electrode 13 when a voltage is applied to the film capacitor.

[0025] 3C and 3D, when protrusions 14 are provided on end 13a of vapor-deposited metal electrode 13, the displacement of metallized film 11 is V1, which is smaller than displacement V0 in the case of FIGS. 3A and 3B. This is because heat is dispersed rather than concentrated at end 13a of vapor-deposited metal electrode 13, thereby reducing the temperature rise.

[0026] Fig. 4A is a diagram schematically illustrating a local cross section of film capacitor 1 of Fig. 1. Fig. 4B is a schematic cross section showing a state in which vapor deposited metal electrode 13 and dielectric film 12 of film capacitor 1 of Fig. 4A have shrunk.

[0027] 4A , in film capacitor 1, for example, a pair of metallized films 11 are overlapped. Vapor-deposited metal electrode 213 of one metallized film 211 is connected to first end surface electrode 21, and vapor-deposited metal electrode 313 of the other metallized film 311 is connected to second end surface electrode 22. By providing insulating margins 216, 316 on metallized films 211, 311, respectively, vapor-deposited metal electrode 213 of one metallized film 211 can be prevented from connecting to second end surface electrode 22 of the other. The overlapping portion of metallized films 211, 311 in the thickness direction is an effective electrode portion effective as an electrode of film capacitor 1, and has an effective electrode width EW1.

[0028] When a voltage is applied to film capacitor 1, the temperature of vapor-deposited metal electrodes 213 and 313 rises, particularly at their ends 213a and 313a. As a result, vapor-deposited metal electrodes 213 and 313 contract in the direction of arrow S1 in FIG. 4A . A strong force due to thermal contraction of vapor-deposited metal electrodes 213 and 313 is applied near ends 213a and 313a of vapor-deposited metal electrodes 213 and 313, as shown in region R1 in FIG. 4A . The force of the contraction of vapor-deposited metal electrodes 213 and 313 stretches dielectric film 12. As a result, a gap Sp forms between a pair of metallized films 11, as shown in FIG. 4B . The formation of gap Sp between metallized films 11 results in the effective electrode width EW2 of the effective electrode portion of film capacitor 1 being smaller than EW1, resulting in a decrease in the capacitance of film capacitor 1.

[0029] 2A , by providing multiple protrusions 14 on end 13a of vapor-deposited metal electrode 13, heat concentration at end 13a of vapor-deposited metal electrode 13 is suppressed, thereby suppressing thermal contraction of vapor-deposited metal electrode 13. This suppresses the occurrence of gaps Sp between metallized films 11. Furthermore, the flat portions 14a of protrusions 14 suppress electric field concentration, thereby preventing short-circuiting between vapor-deposited metal electrode 13 on one metallized film 11 and end electrode 20 on the other.

[0030] [Example] Using metallized film 11 according to the first embodiment, the rate of change in gap size due to changes in the dimensions of protrusions 14 was measured. Figure 5 is a table showing the results of the change in effective electrode width before and after voltage application for film capacitors 1 formed using metallized films according to the comparative example and the example. The change in effective electrode width indicates the ratio of the decrease in effective electrode width EW2 after voltage application to the effective electrode width EW1 before voltage application to the film capacitor 1. When the reference capacitance of film capacitor 1 at a temperature of 25°C is C0 and the capacitance with temperature is C1, the change in capacitance is defined as ΔC = C0 - C1. Furthermore, when the reference dielectric constant of dielectric film 12 at a temperature of 25°C is ε0 and the dielectric constant with temperature is ε1, the change in dielectric constant is defined as Δε = ε0 - ε1. In this case, EW2 / EW1, which indicates the amount of change in the effective electrode width, is calculated by the formula EW2 / EW1=(1-ΔC / C0)×(1-Δε / ε0).

[0031] As a comparative example, a metallized film having a vapor-deposited metal electrode without a protrusion was used. In the metallized film of the comparative example, the edge of the vapor-deposited metal electrode on the insulating margin side was formed in a straight line. In the metallized film of the comparative example, an insulating margin with a width of 2.0 mm was provided.

[0032] As examples, metallized film 11 was used, which has vapor-deposited metal electrode 13 with multiple protrusions 14 formed thereon, as described in embodiment 1. In each example, height h1 (see FIG. 2B) and length d1 (see FIG. 2B) of protrusion 14, margin width md (see FIG. 2A) between flat portion 14a of protrusion 14 and one end 12a of dielectric film 12, and spacing cl between adjacent protrusions 14 were changed.

[0033] In Example 1-1, metallized film 11 was used in which height h1 of protrusions 14 was 0.10 mm, length d1 of flat portion 14a of protrusions 14 was 0.7 mm, margin width md was 1.90 mm, and spacing cl of protrusions 14 was 1.4 mm.

[0034] In Example 1-2, metallized film 11 was used in which height h1 of protrusions 14 was 0.30 mm, length d1 of flat portion 14a of protrusions 14 was 1.5 mm, margin width md was 1.70 mm, and spacing cl of protrusions 14 was 0.6 mm.

[0035] In Example 1-3, metallized film 11 was used in which height h1 of protrusions 14 was 0.15 mm, length d1 of flat portion 14a of protrusions 14 was 1.0 mm, margin width md was 1.35 mm, and spacing cl of protrusions 14 was 1.1 mm.

[0036] As shown in Figure 5, the reduction rate of the effective electrode width (1-EW2 / EW1) is 1.8% in the comparative example, while it is 0.05% to 0.30% in Examples 1-1 to 1-3, which is smaller than the comparative example. Providing multiple protrusions 14 on end 13a of vapor-deposited metal electrode 13 reduces the concentration of heat at end 13a of vapor-deposited metal electrode 13, reducing the degree of shrinkage of vapor-deposited metal electrode 13 and thereby suppressing the generation of gaps Sp. Therefore, Examples 1-1 to 1-3 suppress the reduction in capacitance of film capacitor 1 compared to the comparative example.

[0037] [effect] According to the above-described embodiment, the following effects can be achieved.

[0038] Metallized film 11 includes dielectric film 12 and vapor-deposited metal electrode 13. Vapor-deposited metal electrode 13 is formed on the surface of dielectric film 12 and is arranged such that one end 12a of dielectric film 12 in width direction W has insulating margin 16 extending in longitudinal direction L of dielectric film 12. Vapor-deposited metal electrode 13 has multiple protrusions 14 facing insulating margin 16 at end 13a of electrode 13 that faces insulating margin 16, and multiple protrusions 14 have flat portions 14a that are flat along the direction in which insulating margin 16 extends.

[0039] This configuration prevents heat from concentrating on vapor deposited metal electrode 13, thereby preventing a decrease in capacitance, and also prevents short circuits by providing flat portions 14a on protrusions 14.

[0040] The plurality of protrusions 14 are arranged in the longitudinal direction L of the dielectric film 12 at intervals.

[0041] This configuration further reduces the concentration of heat at end 13a of vapor deposited metal electrode 13.

[0042] The length d1 of the flat portion 14a is not less than 0.7 mm and not more than 1.5 mm.

[0043] This configuration can further improve the effect of suppressing short circuits. By setting the length d1 of the flat portion 14a to 0.7 mm or more, the concentration of electric field can be suppressed, thereby suppressing the occurrence of short circuits. Furthermore, by setting the length of the flat portion 14a to 1.5 mm or less, the concentration of heat can be suppressed, thereby suppressing the occurrence of gaps Sp between the dielectric films 12.

[0044] Film capacitor 1 includes wound body 10 made of the above-described metallized film 11, and a pair of end electrodes 20 arranged on both ends of wound body 10.

[0045] With this configuration, it is possible to provide a film capacitor that can suppress a decrease in capacitance and also suppress short circuits.

[0046] [Variations] FIG. 6 is a schematic diagram showing metallized film 111 according to a first variation of the first embodiment. As shown in FIG. 6, vapor-deposited metal electrode 113 may include a plurality of segmented electrodes 113b. The plurality of segmented electrodes 113b are formed by dividing vapor-deposited metal electrode 113 by slits 117 provided along width direction W of dielectric film 112. Each of the plurality of segmented electrodes 113b has a protrusion 114. In other words, each of segmented electrodes 113b has a protrusion 114 at end 113a on the insulating margin 116 side, which protrudes toward one end 112a of dielectric film 112.

[0047] Vapor-deposited metal electrode 113 has a strip-shaped connecting portion 118 extending longitudinally at the other end 112b of dielectric film 112 in the width direction W. Connecting portion 118 is used to electrically connect the end surface electrodes of the film capacitor to vapor-deposited metal electrode 113. Each of multiple segmented electrodes 113b is electrically connected to connecting portion 118 via fuse 119.

[0048] Such a configuration can achieve the same effects as metallized film 11 of embodiment 1. Furthermore, a film capacitor formed using metallized film 111 can be endowed with a safety function, thereby improving safety.

[0049] FIG. 7 is a table showing the results of the change in effective electrode width before and after voltage application in a film capacitor formed using metallized film 111 of Variation 1. The height h2 and width d2 of protrusion 114, the margin width md2 between flat portion 114a of protrusion 114 and one end 112a of dielectric film 12, the spacing between adjacent protrusions cl2, and the slit width s2 were changed, and the change in effective electrode width was measured. The effective electrode width was calculated using the method described in Embodiment 1. The comparative example is the same as that described in Embodiment 1.

[0050] In Example 2-1, a metallized film 11 was used in which the height h2 of the convex portion 114 was 0.10 mm, the length d1 of the flat portion 114a of the convex portion 114 was 0.7 mm, the margin width md2 was 1.90 mm, the spacing cl2 of the convex portions 114 was 1.4 mm, and the slit width s2 was 0.1 mm.

[0051] In Example 2-2, a metallized film 11 was used in which the height h2 of the convex portion 114 was 0.30 mm, the length d1 of the flat portion 114a of the convex portion 114 was 1.5 mm, the margin width md2 was 1.70 mm, the spacing cl2 of the convex portions 114 was 0.6 mm, and the slit width s2 was 0.1 mm.

[0052] In Example 2-3, a metallized film 11 was used in which the height h2 of the convex portion 114 was 0.15 mm, the length d1 of the flat portion 114a of the convex portion 114 was 1.0 mm, the margin width md2 was 1.35 mm, the spacing cl2 of the convex portions 114 was 1.1 mm, and the slit width s2 was 0.1 mm.

[0053] As shown in FIG. 7, in Examples 2-1 to 2-3, the reduction rate of the effective electrode width is also the smallest compared to the comparative example, and the reduction in the capacitance of the film capacitor can be suppressed.

[0054] FIG. 8A is a schematic diagram showing metallized film 411 according to Variation 2 of Embodiment 1. FIG. 8B is an enlarged view of region E2 in FIG. 8A. As shown in FIGS. 8A and 8B, in metallized film 411 of Variation 2, convex portion 414 of vapor deposited metal electrode 413 is formed so that its width increases toward flat portion 414a at its tip. That is, width da1 of convex portion 414 on the side of flat portion 414a is larger than width db1 of vapor deposited metal electrode 413 on the side of end 413a.

[0055] FIG. 9 is a table showing the results of the change in effective electrode width before and after voltage application in a film capacitor formed using metallized film 411 of Modification Example 2. The height h3 of convex portion 414, width da1 of convex portion 414 on the flat portion 414a side, width db1 of convex portion 414 on the end 413a side, margin width md3, and spacing cl3 between adjacent convex portions 414 on the flat portion 414a side were changed to measure the change in effective electrode width. The effective electrode width was calculated using the method described in Embodiment 1. The comparative example is the same as that described in Embodiment 1.

[0056] In Example 3-1, metallized film 11 was used having height h3 of 0.10 mm, width da1 on flat portion 414a side of 1.0 mm, width db1 on edge 413a side of 0.88 mm, margin width md3 of 1.90 mm, and spacing cl3 of 1.1 mm.

[0057] In Example 3-2, metallized film 11 was used having height h3 of 0.30 mm, width da1 on flat portion 414a side of 1.0 mm, width db1 on end portion 413a side of 0.65 mm, margin width md3 of 1.70 mm, and spacing cl3 of 1.1 mm.

[0058] In Example 3-3, metallized film 11 was used having height h3 of 0.15 mm, width da1 on flat portion 414a side of 1.0 mm, width db1 on end portion 413a side of 0.83 mm, margin width md3 of 1.35 mm, and spacing cl3 of 1.1 mm.

[0059] As shown in FIG. 9, in Examples 3-1 to 3-3, the reduction rate of the effective electrode width is also the smallest compared to the comparative example, and the reduction in the capacitance of the film capacitor can be suppressed.

[0060] Fig. 10A is a schematic diagram showing metallized film 511 according to Variation 3 of Embodiment 1. Fig. 10B is an enlarged view of region E3 in Fig. 10A. As shown in Figs. 10A and 10B, in metallized film 511 of Variation 3, protrusions 514 of vapor-deposited metal electrode 513 are formed so that their widths narrow toward flat portions 514a at their tips. That is, width da2 of protrusions 514 on the side of flat portions 514a is larger than width db2 of vapor-deposited metal electrode 513 on the side of end 513a.

[0061] FIG. 11 is a table showing the results of the change in effective electrode width before and after voltage application in a film capacitor formed using metallized film 511 of Variation 3. The height h4 of convex portion 514, width da2 of convex portion 514 on the flat portion 514a side, width db2 of convex portion 514 on the end 513a side, margin width md4, and spacing cl4 between adjacent convex portions 514 on the flat portion 514a side were changed, and the change in effective electrode width was measured. The effective electrode width was calculated using the method described in Embodiment 1. The comparative example is the same as that described in Embodiment 1.

[0062] In Example 4-1, metallized film 11 was used having height h4 of 0.10 mm, width da2 on flat portion 514a side of 1.0 mm, width db2 on end portion 513 side of 1.1 mm, margin width md4 of 1.90 mm, and spacing cl4 of 1.1 mm.

[0063] In Example 4-2, metallized film 11 was used having height h4 of 0.30 mm, width da2 on flat portion 514a side of 1.0 mm, width db2 on end portion 513 side of 1.3 mm, margin width md4 of 1.70 mm, and spacing cl4 of 1.1 mm.

[0064] In Example 4-3, metallized film 11 was used having height h4 of 0.15 mm, width da2 on flat portion 514a side of 1.0 mm, width db2 on end portion 513 side of 1.2 mm, margin width md4 of 1.35 mm, and spacing cl4 of 1.1 mm.

[0065] In Example 4-4, metallized film 11 was used having height h4 of 0.10 mm, width da2 on flat portion 514a side of 1.0 mm, width db2 on end portion 513 side of 2.1 mm, margin width md4 of 1.90 mm, and spacing cl4 of 1.1 mm.

[0066] As shown in FIG. 11, in Examples 4-1 to 4-4, the reduction rate of the effective electrode width is also the smallest compared to the comparative example, and the reduction in the capacitance of the film capacitor can be suppressed.

[0067] In the above-described embodiment, an example in which the protrusions 14 are rectangular has been described, but the shape of the protrusions 14 is not limited to a rectangular shape. For example, the corners of the protrusions 14 may be chamfered.

[0068] (Outline of the embodiment) (1) The metallized film of the present invention comprises a dielectric film and a metal vapor deposition electrode formed on the surface of the dielectric film, the metal vapor deposition electrode being positioned so that an insulating margin extending in the longitudinal direction of the dielectric film is provided at one end of the width direction of the dielectric film, and the metal vapor deposition electrode has a plurality of protrusions facing the insulating margin at the end facing the insulating margin, and the plurality of protrusions have flat portions that are flat along the direction in which the insulating margin extends.

[0069] (2) In the metallized film of (1), the plurality of protrusions may be arranged at intervals in the longitudinal direction of the dielectric film.

[0070] (3) In the metallized film of (1) or (2), the length of the flat portion may be 0.7 mm or more and 1.5 mm or less.

[0071] (4) In any one of the metallized films (1) to (3), the metal vapor deposition electrode may include a plurality of divided electrodes divided by slits arranged along the width direction of the dielectric film, and each of the plurality of divided electrodes may have one of the above-mentioned convex portions.

[0072] (5) In the metallized film of (4), the metal vapor deposition electrode may have a strip-shaped connecting portion extending longitudinally at the other end of the dielectric film in the width direction, and each of the multiple split electrodes may be electrically connected to the connecting portion.

[0073] (6) A film capacitor of the present invention comprises a wound body made of any one of the metallized films (1) to (5) and end electrodes arranged on both ends of the metallized film. [Industrial Applicability]

[0074] The present invention has broad applicability to film capacitors and metallized films for forming film capacitors. [Explanation of symbols]

[0075] 1. Film capacitor 10 wound body 11, 111, 211, 311, 411, 511 Metallized Film 12, 112 Dielectric film 12a, 112a One end 13, 113, 213, 313, 413, 513 Metal evaporated electrode 13a, 113a, 213a, 313a, 413a, 513a End 14, 114, 414, 514 convex part 14a, 114a, 414a, 514a flat part 16, 116, 216, 416, 516 isolation margin 20 End electrode 117 Slit 118 Connection

Claims

1. a dielectric film; a vapor-deposited metal electrode formed on the surface of the dielectric film; Equipped with the vapor-deposited metal electrode is disposed at one end in the width direction of the dielectric film so as to provide an insulating margin extending in the longitudinal direction of the dielectric film; the vapor-deposited metal electrode has, at an end facing the insulating margin, a plurality of protrusions directed toward the insulating margin; the plurality of protrusions have flat portions that are flat along the direction in which the insulating margin extends, the vapor-deposited metal electrode includes a plurality of segmented electrodes divided by slits provided in the width direction of the dielectric film, and each of the plurality of segmented electrodes has one of the protrusions; Metallized film.

2. a dielectric film; a vapor-deposited metal electrode formed on the surface of the dielectric film; Equipped with the vapor-deposited metal electrode is disposed at one end in the width direction of the dielectric film so as to provide an insulating margin extending in the longitudinal direction of the dielectric film; the vapor-deposited metal electrode has, at an end facing the insulating margin, a plurality of protrusions directed toward the insulating margin; The plurality of protrusions have flat portions that are flat along the direction in which the insulating margin extends, and have a shape that widens toward the flat portions. Metallized film.

3. a dielectric film; a vapor-deposited metal electrode formed on the surface of the dielectric film; Equipped with the vapor-deposited metal electrode is disposed at one end in the width direction of the dielectric film so as to provide an insulating margin extending in the longitudinal direction of the dielectric film; the vapor-deposited metal electrode has, at an end facing the insulating margin, a plurality of protrusions directed toward the insulating margin; The plurality of protrusions have flat portions that are flat along the direction in which the insulating margin extends, and have a shape in which the width narrows toward the flat portions. Metallized film.

4. The metal vapor deposition electrode has a strip-shaped connection portion extending in the longitudinal direction at the other end in the width direction of the dielectric film, Each of the plurality of divided electrodes is electrically connected to the connection portion. The metallized film of claim 1 .

5. the plurality of protrusions are arranged at intervals in the longitudinal direction of the dielectric film. The metallized film of any one of claims 1 to 4.

6. The length of the flat portion is 0.7 mm or more and 1.5 mm or less. The metallized film of any one of claims 1 to 4.

7. A roll made of the metallized film according to any one of claims 1 to 4; a pair of end electrodes disposed on both ends of the metallized film; Equipped with Film capacitor.

Images