Light emitting element for display and LED display device having the same

The light-emitting element with multiple stacks and tailored contact electrodes addresses the challenges of sub-pixel area, mounting time, and RGB mixing ratio, enhancing display efficiency and quality.

JP7828425B2Active Publication Date: 2026-03-11SEOUL VIOSYS CO LTD
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Patent Information

Authority / Receiving Office
JP · JP
Patent Type
Patents
Current Assignee / Owner
Filing Date
2024-12-11
Publication Date
2026-03-11

AI Technical Summary

Technical Problem

Conventional LED displays face challenges in increasing the area of each sub-pixel within a limited pixel area, reducing the time required for mounting, and achieving a balanced RGB mixing ratio for high-quality white light emission.

Method used

A light-emitting element comprising a first, second, and third light-emitting stack with specific contact electrodes, including a transparent conductive oxide layer, allows for increased sub-pixel area without increasing pixel size, reduces the number of LED chips, and enables control of the RGB mixing ratio by adjusting the thickness and heat treatment of the contact electrodes.

Benefits of technology

The solution enhances the area of each sub-pixel, reduces mounting time, and facilitates easy control of the RGB mixing ratio, resulting in improved display quality and efficiency.

✦ Generated by Eureka AI based on patent content.

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Abstract

To provide a display apparatus capable of increasing an area of each sub-pixel in a restricted pixel area.SOLUTION: A light-emitting element includes: first, second and third light-emitting stacks each including a first conductive type semiconductor layer, an active layer, and a second conductive type semiconductor layer, which are stacked in the order; a first lower contact electrode that is in ohmic contact with the first light-emitting stack; a second lower contact electrode that is in ohmic contact with the second conductive type semiconductor layer of the second light-emitting stack; and a third lower contact electrode that is in ohmic contact with the second conductive type semiconductor layer of the third light-emitting stack. The second light-emitting stack is arranged between the first light-emitting stack and the third light-emitting stack, the first lower contact electrode is arranged between the first light-emitting stack and the second light-emitting stack, and the second and third lower contact electrodes are arranged between the second light-emitting stack and the third light-emitting stack. The first, second and third lower contact electrodes include a transparent conductive oxide layer, and the thickness of the second lower contact electrode or the third lower contact electrode is greater than the thickness of the first lower contact electrode.SELECTED DRAWING: Figure 2
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Citation Information

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