Display devices, display modules, and electronic devices

Abstract

To provide a display device with high definition, and a display device with high display quality.SOLUTION: A display device includes a first insulating layer, a second insulating layer, a first transistor, a second transistor, a first light-emitting diode, a second light-emitting diode, and a color conversion layer. The first insulating layer is present on the first transistor and the second transistor. The first light-emitting diode and the second light-emitting diode are present on the first insulating layer. The color conversion layer is present on the second light-emitting diode. The color conversion layer has a function of converting the light emitted from the second light-emitting diode into light with longer wavelengths. Each of the first transistor and the second transistor includes a metal oxide layer and a gate electrode. The metal oxide layer includes a channel formation region. The height of an upper surface of the gate electrode and the height of an upper surface of the second insulating layer coincide or substantially coincide with each other.SELECTED DRAWING: Figure 1

Description

Technical Field

[0001] One aspect of the present invention relates to a display device, a display module, an electronic device, and a manufacturing method thereof. Note that one aspect of the present invention is not limited to the above technical field. Examples of the technical field of one aspect of the present invention include semiconductor devices, display devices, light emitting devices, power storage devices, memory devices, electronic devices, lighting devices,

[0002] input devices (e.g., touch sensors, etc.), input / output devices (e.g., touch panels, etc.), their driving methods, or their manufacturing methods.

Background Art

[0003] In recent years, display devices using micro light emitting diodes (micro LEDs (Light Emitting Diodes)) as display elements have been proposed (for example, Patent Document 1). Display devices using micro LEDs as display elements have advantages such as high brightness, high contrast, and long life, and research and development are active as next-generation display devices.

[0004]

Prior Art Documents

Patent Documents

Patent Document 1

[0005] \U.S. Patent Application Publication No. 2014 / 0367705

Summary of the Invention

Problems to be Solved by the Invention

[0006] Next, we fabricated red (R), green (G), and blue (B) LEDs on different wafers. Each LED is cut out and mounted on a circuit board. Therefore, the number of pixels in the display device is large. The more LEDs are implemented, the longer the implementation time becomes. Also, the display device The higher the resolution, the more difficult it becomes to implement the LEDs.

[0006] One aspect of the present invention aims to provide a display device with high resolution. One aspect of this invention aims to provide a display device with high display quality. One objective is to provide a display device with low power consumption. One aspect of the present invention is to provide a reliable display device. One of our objectives is to provide high-performance display devices.

[0007] One aspect of the present invention reduces the manufacturing cost of a display device using microLEDs as display elements. One of the challenges is to develop a display element using microLEDs with a high yield. One aspect of the present invention is to develop a display element using microLEDs with a high yield. One of the objectives is to manufacture the display device used in this project.

[0008] Furthermore, the description of these problems does not preclude the existence of other problems. One aspect of the present invention is It is not necessarily required to resolve all of these issues. Specifications, drawings, invoices. It is possible to extract other issues from the descriptions in the sections. [Means for solving the problem]

[0009] One aspect of the present invention is a first insulating layer, a second insulating layer, a first transistor, a second transistor A display device having a st, a first light-emitting diode, a second light-emitting diode, and a color conversion layer. Yes. The first transistor is electrically connected to the first light-emitting diode. The second transistor The inverter is electrically connected to the second light-emitting diode. The first insulating layer is connected to the first transistor. The first light-emitting diode and the second light-emitting diode are located on the transistor and the second light-emitting diode. The diode is located on the first insulating layer. The color conversion layer is located on the second light-emitting diode. The color conversion layer has the function of converting the light emitted by the second light-emitting diode into longer wavelength light. The first transistor and the second transistor each have a metal oxide layer and a gate It has a gate electrode. The metal oxide layer has a channel-forming region. The upper surface of the gate electrode is high This height is consistent with or approximately consistent with the height of the top surface of the second insulating layer.

[0010] The first transistor further comprises a gate insulating layer, a first conductive layer, and a second conductive layer. It is preferable that the metal oxide layer has a first region that overlaps with the first conductive layer and a second conductive layer It has a second region that overlaps with the first region, and a third region between the first and second regions. The conductive layer and the second conductive layer are located spaced apart from each other on the metal oxide layer. The second insulating layer is It is located on the first conductive layer and the second conductive layer. The second insulating layer overlaps with the third region. It has an opening. The gate insulating layer is located inside the opening and on the sides of the second insulating layer and It overlaps with the upper surface of region 3. The gate electrode is located inside the opening and is separated by a gate insulating layer. This overlaps with the side surface of the second insulating layer and the top surface of the third region.

[0011] One aspect of the present invention is a first insulating layer, a second insulating layer, a first conductive layer, a second conductive layer, and a first Transistor, second transistor, first light-emitting diode, second light-emitting diode, and This is a display device having a color conversion layer. The first transistor is connected via the first conductive layer. It is electrically connected to the first light-emitting diode. The second transistor is connected via the second conductive layer. The first insulating layer is electrically connected to the first transistor. The first and second light-emitting diodes are located on the upper and second transistors. The first light-emitting diode is located on the first insulating layer. The first light-emitting diode is in contact with the first conductive layer. The first light-emitting diode has an electrode. The second light-emitting diode has a second electrode that is in contact with the second conductive layer. The height of the upper surface of the first electrode and the height of the upper surface of the second electrode are equal to the height of the upper surface of the second insulating layer. It matches or is roughly identical. The color conversion layer is located on the second light-emitting diode. Color conversion layer The first has the function of converting the light emitted by the second light-emitting diode into longer wavelength light. The first transistor and the second transistor each have a metal oxide layer. The layer has a channel-forming region.

[0012] The color conversion layer is preferably in contact with the second light-emitting diode. Alternatively, one embodiment of the present invention. The display device further includes a third insulating layer located between the second light-emitting diode and the color conversion layer. The material has layers, and it is preferable that the color conversion layer is in contact with the third insulating layer.

[0013] The first light-emitting diode and the second light-emitting diode are, respectively, microlight-emitting diodes. It is preferable that this be the case.

[0014] The first light-emitting diode and the second light-emitting diode each emit blue light. preferable.

[0015] The first transistor and the second transistor are such that one of the channel length and channel width is Alternatively, it is preferable that both have different structures.

[0016] A display device according to one aspect of the present invention preferably further comprises a drive circuit and a fourth insulating layer. The drive circuit has a circuit transistor, and the circuit transistor is connected to the semiconductor substrate. The semiconductor substrate has a layer-forming region, and through a fourth insulating layer, the first transistor and the second The transistor, the first light-emitting diode, and the second light-emitting diode overlap with each of them. It is preferable.

[0017] A display device according to one aspect of the present invention preferably further has a colored layer located on the color conversion layer. At this time, the light emitted by the second light-emitting diode passes through the color conversion layer and the coloring layer, It is preferable that the display device be removed from the outside.

[0018] One aspect of the present invention has a display device having any of the above configurations, and a flexible printed circuit If the circuit board (Flexible printed circuit, hereinafter referred to as FPC) A connector such as TCP (Tape Carrier Package) is attached. A module, or COG (Chip On Glass) method or COF (Ch Modules such as those on which integrated circuits (ICs) are mounted using methods such as ip On Film. It is a rule.

[0019] One aspect of the present invention includes the above module, an antenna, a battery, a housing, a camera, and a speaker. An electronic device having at least one of the following: a microphone and an operation button.

[0020] One aspect of the present invention involves forming a matrix of multiple transistors on a first substrate, and then forming a second Multiple light-emitting diodes are formed in a matrix on the substrate, and on the first substrate or the second On the substrate, at least one or more transistors and light-emitting diodes A first conductor is formed that is electrically connected to another, and multiple transistors are connected through the first conductor. At least one of the zistas and at least one of the multiple light-emitting diodes are electrically connected. In this way, the first substrate and the second substrate are bonded together, and the second substrate is peeled off, The surface is exposed, and a color conversion layer is formed on the first surface, and the color conversion layer is made up of multiple light-emitting diodes The process of forming multiple transistors involves overlapping at least one and at least one flat This is a method for manufacturing a display device using a fading process. At least one of a plurality of light-emitting diodes. It is preferable that it is a microlight-emitting diode. At least one of a plurality of transistors Preferably, the channel-forming region contains a metal oxide. [Effects of the Invention]

[0021] According to one aspect of the present invention, a display device with high resolution can be provided. According to one aspect of the present invention, A display device with high display quality can be provided. According to one aspect of the present invention, a display device with low power consumption can be provided. It is possible to provide a highly reliable display device according to one aspect of the present invention.

[0022] According to one aspect of the present invention, the manufacturing cost of a display device using microLEDs as display elements can be reduced. Yes, it is possible. According to one aspect of the present invention, a display using microLEDs as display elements can be produced with a high yield. We can manufacture display devices.

[0023] Furthermore, the description of these effects does not preclude the existence of other effects. One aspect of the present invention is It is not necessarily required to have all of these effects. It is possible to extract effects other than those listed above. [Brief explanation of the drawing]

[0024] [Figure 1] Figure 1 shows an example of a display device. [Figure 2] Figures 2(A) to 2(C) show an example of a method for manufacturing a display device. [Figure 3] Figures 3(A) and 3(B) show an example of a method for manufacturing a display device. [Figure 4] Figures 4(A) and 4(B) show an example of a method for manufacturing a display device. [Figure 5] Figures 5(A) and 5(B) show examples of display devices. [Figure 6] Figure 6 shows an example of a display device. [Figure 7] Figures 7(A) and 7(B) show examples of display devices. [Figure 8] Figures 8(A) and 8(B) show an example of a method for manufacturing a display device. [Figure 9] Figures 9(A) and 9(B) show an example of a method for manufacturing a display device. [Figure 10] Figure 10(A) is a top view showing an example of a semiconductor device. Figures 10(B) to 10(D) are cross-sectional views showing an example of a semiconductor device. [Figure 11] Figure 11(A) is a top view showing an example of a semiconductor device. Figures 11(B) to 11(D) are cross-sectional views showing examples of semiconductor devices. [Figure 12] Figure 12 is a circuit diagram showing an example of a pixel in a display device. [Figure 13] Figure 13(A) illustrates the classification of IGZO crystal structures. Figure 13(B) illustrates the XRD spectrum of a quartz glass substrate. Figure 13(C) illustrates the XRD spectrum of a crystalline IGZO film. Figure 13(D) illustrates the micro-electron diffraction pattern of a quartz glass substrate. Figure 13(E) illustrates the micro-electron diffraction pattern of a crystalline IGZO film. [Figure 14]Figures 14(A) and 14(B) show examples of electronic devices. [Figure 15] Figures 15(A) and 15(B) show examples of electronic devices. [Figure 16] Figures 16(A) and 16(B) show examples of electronic devices. [Figure 17] Figures 17(A) to 17(D) show examples of electronic devices. [Figure 18] Figures 18(A) to 18(F) show examples of electronic devices. [Modes for carrying out the invention]

[0025] Embodiments will be described in detail with reference to the drawings. However, the present invention is not limited to the following description. Without departing from the spirit and scope of the present invention, its form and details may be modified in various ways. It will be easily understood by those skilled in the art to obtain this. Therefore, the present invention is as shown in the embodiments below. The interpretation is not limited to the content stated herein.

[0026] In the configuration of the invention described below, the same part or part having a similar function is included. The same reference numerals are used consistently across different drawings, and explanations of their repetition are omitted. When referring to the function of [this], the hatch pattern is the same, and sometimes no specific symbol is assigned.

[0027] Furthermore, the position, size, and extent of each component shown in the drawings are, for the sake of ease of understanding, actually The location, size, and range may not be described. Therefore, the disclosed invention is not always Furthermore, it is not limited to the location, size, scope, etc., disclosed in the drawings.

[0028] Note that the words "membrane" and "layer" may differ in some cases or depending on the situation. Therefore, they can be interchanged. For example, the term "conductive layer" can be replaced with "conductive film." It is possible to change the term to "insulating film". Alternatively, for example, the term "insulating film" can be changed to It is possible to change the term to "insulating layer".

[0029] (Embodiment 1) In this embodiment, a display device according to one aspect of the present invention will be described with reference to Figures 1 to 9.

[0030] [Overview of display devices] The display device of this embodiment includes a light-emitting diode which is a display element and a transistor which drives the display element. It has multiple instances of both the 'njista' and the 'njista'.

[0031] In the display device of this embodiment, each pixel of a color has a light-emitting diode that emits light of the same color. For example, when using a light-emitting diode that emits blue light, the blue pixel will emit light. The blue light emitted by the iod is extracted to the outside of the display device. Then, red, green, etc. In pixels other than blue, the blue light emitted by the light-emitting diode is converted by the color conversion layer. The light then becomes longer wavelength than blue light and is extracted to the outside of the display device.

[0032] In the fabrication of a display device having light-emitting diodes that emit light of the same color in pixels of each color, on the substrate Since only one type of light-emitting diode needs to be manufactured, it is not necessary to manufacture multiple types of light-emitting diodes. Compared to the case where light-emitting diodes are used in a circuit, the manufacturing equipment and processes can be simplified. This reduces the difficulty of mounting the components onto the circuit board. Furthermore, it also reduces the difficulty of mounting transistors and light-emitting diodes. This makes it easier to form them on the same substrate.

[0033] One aspect of the present invention is a display device comprising a plurality of transistors formed on different substrates and multiple After bonding several light-emitting diodes together, the substrate on the side of the light-emitting diodes is peeled off, and the peeling process It is fabricated by layering a color conversion layer on top of a light-emitting diode on the exposed surface.

[0034] In one embodiment of the present invention, a method for manufacturing a display device comprises a plurality of light-emitting diodes and a plurality of transistors. Because the LEDs are bonded together at once, this method is superior to the method of mounting each LED on the circuit board one by one. This allows for a reduction in the manufacturing time of display devices. Furthermore, it enables the production of display devices with a high pixel count and high-definition displays. Even when manufacturing, the difficulty of production can be reduced.

[0035] The display device of this embodiment has the function of displaying images using light-emitting diodes. Since diodes are self-luminous, when using light-emitting diodes as display elements, The device does not require a backlight, nor does it need to have a polarizing plate. Therefore, the display This reduces the power consumption of the device and allows for thinner and lighter display devices. Display devices that use light-emitting diodes as display elements have high contrast and a wide viewing angle. This allows for a high level of display quality. Furthermore, by using inorganic materials as the light-emitting material, the display can be made more precise. This can extend the lifespan of the device and improve its reliability.

[0036] In this embodiment, we will particularly describe an example in which a microLED is used as the light-emitting diode. Let me explain. In this embodiment, a microLED having a double heterojunction is used. I will explain this. However, there are no particular limitations on light-emitting diodes; for example, those having a quantum well junction. Micro-LEDs, LEDs using nanocolumns, etc., may also be used.

[0037] The area of ​​the region that emits light from the light-emitting diode is 1 mm².2 The following is preferred: 10,000 μm 2 The following is more preferable: 3000 μm 2 The following is more preferable: 700 μm 2 The following is further Preferred. In this specification, the area of ​​the region that emits light is 10,000 μm². 2 below These light-emitting diodes are sometimes referred to as microLEDs.

[0038] The transistors in the display device preferably have a metal oxide in the channel formation region. Transistors using metal oxides can consume less power. Therefore, By combining it with micro-LEDs, a display device with extremely low power consumption can be realized. It is possible.

[0039] In particular, in the display device of this embodiment, the height of the upper surface of the gate electrode is equal to the height of the upper surface of the insulating layer. It is preferable to have transistors that are identical or roughly identical. For example, CMP(Ch Planar treatment using methods such as mechanical polishing. By applying this process, the top surface of the gate electrode and the top surface of the insulating layer are made flat, and the height of the top surface of the gate electrode and The height of the top surface of the insulating layer can be made uniform.

[0040] Transistors with this configuration can be easily made smaller. By reducing the size of the display device, the size of the pixels can be reduced. It can increase the level of detail.

[0041] Because the display device of this embodiment can be manufactured with high resolution, it can be used with relatively small display units. It can be suitably used in sub-devices. Examples of such electronic devices include wristwatches and other electronic devices. Wristlet-type information terminals (wearable devices) and head-mounted displays, etc. VR (Virtual Reality) devices, glasses-type AR (Augmented Reality) Devices for d Reality, or devices for MR (Mixed Reality) Examples include wearable devices that can be attached to the head.

[0042] [Example of display device configuration 1] Figure 1 shows a cross-sectional view of the display device 100A. Figures 2 to 4 show the manufacturing method of the display device 100A. A cross-sectional view illustrating this is shown.

[0043] In this embodiment, the light-emitting diode 110a is provided in the red pixel, and the light-emitting diode 1 An example is shown where 10b is placed on a blue pixel.

[0044] Light-emitting diodes 110a and 110b have the same configuration and emit light of the same color. It emits light. In this embodiment, light-emitting diodes 110a and 110b are Let's take the example of emitting blue light.

[0045] As shown in Figure 1, the light emitted by the light-emitting diode 110a of the red pixel is converted into a color conversion layer The CCR converts the light from blue to red, and the CFR in the colored layer enhances the purity of the red light. It is then emitted to the outside of the display device 100A.

[0046] Although not shown in the diagram, similarly, the light emitted by the light-emitting diode in the green pixel is converted by the color conversion layer. The light is converted from blue to green, and the purity of the green light is enhanced by the green coloring layer, and the display device It is ejected to the outside of 100A.

[0047] On the other hand, the light emitted by the light-emitting diode 110b of the blue pixel is displayed without going through the color conversion layer. It is ejected to the outside of the display device 100A.

[0048] The display device 100A shown in Figure 1 is an LED board 150A shown in Figure 2(A), and is shown in Figure 2(B). The circuit board 150B shown is bonded together (Figure 2(C), Figure 3(A)), and the light-emitting diode 1 The substrate 101 on sides 10a and 110b is peeled off (Figure 3(B), Figure 4(A)), and the peeling exposes the substrate. The material is fabricated by providing a color conversion layer (CCR) and a colored layer (CFR) on the surface (Figure 4(B)). ).

[0049] The configuration and manufacturing method of the display device 100A will be explained below using Figures 2 to 4. .

[0050] Figure 2(A) shows a cross-sectional view of the LED substrate 150A.

[0051] LED board 150A consists of board 101, light-emitting diode 110a, and light-emitting diode 110b , and also has a protective layer 102.

[0052] Light-emitting diodes 110a and 110b each consist of an electrode 112 and a semiconductor, respectively. It has a layer 113, an emissive layer 114, a semiconductor layer 115, and an electrode 116.

[0053] Electrode 112 is electrically connected to semiconductor layer 113. Electrode 116 is connected to semiconductor layer 11 It is electrically connected to 5. The protective layer 102 is connected to the substrate 101, semiconductor layer 113, and light-emitting layer 1 14, and the semiconductor layer 115 are covered. The protective layer 102 is provided so as to cover the sides of the electrode 112. and covers the side surface of electrode 116, and overlaps with the upper surface of electrode 112 and the upper surface of electrode 116. It has an opening. The upper surfaces of electrode 112 and electrode 116 are exposed at this opening. .

[0054] The light-emitting layer 114 is sandwiched between semiconductor layer 113 and semiconductor layer 115. In this process, electrons and holes combine to emit light. Of the semiconductor layer 113 and the semiconductor layer 115, one One is an n-type semiconductor layer, and the other is a p-type semiconductor layer.

[0055] The stacked structure, which includes a semiconductor layer 113, a light-emitting layer 114, and a semiconductor layer 115, is red, yellow, and green. They are formed to emit a color, or light such as blue. These layered structures include, For example, gallium phosphorus compounds, gallium arsenide compounds, gallium aluminum arsenide Compounds, aluminum-gallium-indium-phosphorus compounds, gallium nitrides, indiu Gallium nitride compounds, selenium zinc compounds, etc. can be used. The laminated structure is formed to emit blue light.

[0056] Examples of substrates 101 include sapphire (Al2O3) substrates and silicon carbide (SiC) substrates. By using single-crystal substrates such as silicon (Si) substrates and gallium nitride (GaN) substrates... It is possible.

[0057] Figure 2(B) shows a cross-sectional view of the circuit board 150B.

[0058] Circuit board 150B consists of substrate 151, insulating layer 152, transistor 120a, transistor 120b, conductive layer 184a, conductive layer 184b, conductive layer 187, conductive layer 189, insulating layer 18 6. It has conductive layers 190a, 190b, 190c, and 190d. The circuit board 150B further comprises insulating layer 162, insulating layer 181, insulating layer 182, insulating layer 18 3. It has insulating layers such as insulating layer 185. One or more of these insulating layers are transient Although sometimes considered a component of a transistor, in this embodiment it is a component of a transistor. I will explain it without including it.

[0059] The substrate 151 may be an insulating substrate such as a glass substrate, quartz substrate, sapphire substrate, or ceramic substrate. A single-crystal semiconductor substrate, or a polycrystalline semiconductor substrate made of silicon or silicon carbide, etc. Conductor substrates, compound semiconductor substrates such as silicon germanium, SOI (Silicon On A semiconductor substrate such as an insulator substrate can be used.

[0060] The substrate 151 preferably blocks visible light (is opaque to visible light). By blocking visible light from 151, transistors 120a and 120b formed on the substrate 151 are blocked. This can suppress light from entering from the outside. However, one aspect of the present invention does not The substrate 151 may, but is not limited to, be transparent to visible light.

[0061] An insulating layer 152 is provided on the substrate 151. The insulating layer 152 is designed to prevent water from entering the substrate 151. Impurities such as hydrogen diffuse into transistors 120a and 120b, and metal oxidation It functions as a barrier layer that prevents oxygen from detaching from the material layer 165 to the insulating layer 152. Examples of the border layer 152 include aluminum oxide film, hafnium oxide film, and silicon nitride film. Other films that allow for less diffusion of hydrogen and oxygen than silicon oxide films can be used.

[0062] Transistors 120a and 120b consist of a conductive layer 161, an insulating layer 163, an insulating layer 164, and a metal It has an oxide layer 165, a pair of conductive layers 166, an insulating layer 167, a conductive layer 168, etc.

[0063] The metal oxide layer 165 has a channel-forming region. The metal oxide layer 165 has a pair of conductive A first region overlapping with one of the layers 166, and a second region overlapping with the other of the pair of conductive layers 166. It has a third region between the first region and the second region.

[0064] A conductive layer 161 and an insulating layer 162 are provided on the insulating layer 152, and the conductive layer 161 and insulating layer 1 Insulating layers 163 and 164 are provided covering 62. The metal oxide layer 165 is It is provided on the insulating layer 164. The conductive layer 161 functions as a gate electrode, and the insulating layer 16 3 and the insulating layer 164 function as a gate insulating layer. The conductive layer 161 is insulating layer 163 and insulating layer 164. It overlaps with the metal oxide layer 165 via the edge layer 164. The insulating layer 163 is similar to the insulating layer 152. Preferably, it functions as a barrier layer. Insulating layer 164 in contact with metal oxide layer 165 It is preferable to use an oxide insulating film such as a silicon oxide film.

[0065] Here, the height of the upper surface of the conductive layer 161 is equal to or approximately equal to the height of the upper surface of the insulating layer 162. For example, an opening is made in the insulating layer 162, and the conductive layer 161 is made to fill the opening. After formation, the height of the upper surface of the conductive layer 161 is determined by applying a planarization treatment using methods such as CMP. This allows the height of the upper surface of the insulating layer 162 to be aligned. This allows the size of 120b to be reduced.

[0066] A pair of conductive layers 166 are spaced apart on the metal oxide layer 165. 166 functions as source and drain. Metal oxide layer 165 and a pair of conductive layers 1 An insulating layer 181 is provided covering 66, and an insulating layer 182 is provided on top of the insulating layer 181. The insulating layer 181 and insulating layer 182 are provided with openings that reach the metal oxide layer 165. The opening has an insulating layer 167 and a conductive layer 168 embedded inside it. It overlaps with the third region described above. The insulating layer 167 is on the side of the insulating layer 181 and the side of the insulating layer 182. It overlaps with the insulating layer 167. The conductive layer 168 is connected to the side surface of the insulating layer 181 and the insulating layer 18 It overlaps with side 2. The conductive layer 168 functions as a gate electrode, and the insulating layer 167 is gate insulating. It functions as a layer. The conductive layer 168 overlaps with the metal oxide layer 165 via the insulating layer 167.

[0067] Here, the height of the upper surface of the conductive layer 168 is equal to or approximately equal to the height of the upper surface of the insulating layer 182. For example, an opening is made in the insulating layer 182, and the insulating layer 167 and After forming the conductive layer 168, a planarization treatment is performed to adjust the height of the upper surface of the conductive layer 168 and the insulating layer. The height of the upper surface of the margin layer 182 can be made uniform. This allows transistors 120a and 1 The size of 20b can be reduced.

[0068] Then, the insulating layer 183 covers the upper surfaces of the insulating layer 182, the insulating layer 167, and the conductive layer 168. And an insulating layer 185 is provided. Insulating layer 181 and insulating layer 183 are provided with insulating layer 152 and Similarly, it is preferable that it functions as a barrier layer. The insulating layer 181 is used to support a pair of conductive layers 166. By covering it, the oxygen contained in the insulating layer 182 causes the pair of conductive layers 166 to oxidize. It can suppress and.

[0069] A plug that is electrically connected to one of the pair of conductive layers 166 and conductive layer 187 is located on the insulating layer 18 1. Embedded in the openings provided in the insulating layer 182, insulating layer 183, and insulating layer 185 The plug has a conductive layer 1 that is in contact with the side surface of the opening and the upper surface of one of the pair of conductive layers 166. The conductive layer 84b and the conductive layer 184a embedded inside the conductive layer 184b are Preferably, the conductive layer 184b is made of a conductive material that does not easily allow hydrogen and oxygen to diffuse. It is preferable that they be present.

[0070] A conductive layer 187 is provided on the insulating layer 185, and an insulating layer 186 is provided on the conductive layer 187. The insulating layer 186 has an opening that reaches the conductive layer 187, and inside the opening A conductive layer 189 is embedded. The conductive layer 189 is connected to conductive layer 187 and conductive layer 190a or It functions as a plug that electrically connects to the conductive layer 190c.

[0071] One of the pair of conductive layers 166 of transistor 120a consists of conductive layer 184a and conductive layer 184b. It is electrically connected to the conductive layer 190a via conductive layer 187 and conductive layer 189. .

[0072] Similarly, one of the pair of conductive layers 166 of transistor 120b is conductive layer 184a, conductive layer 184b, conductive layer 187, and conductive layer 189 are electrically connected to conductive layer 190c. It is being done.

[0073] The materials that can be used for the various conductive layers constituting the display device of this embodiment are as follows: Aluminum, titanium, chromium, nickel, copper, yttrium, zirconium, molybdenum Metals such as den, silver, tantalum, or tungsten, or alloys with these as the main component. Examples include using films containing these materials as a single layer or as a multilayer structure. This can be achieved. For example, a single-layer structure of an aluminum film containing silicon, or an aluminum film on a titanium film. A two-layer structure with a layered aluminum film, a two-layer structure with an aluminum film layered on top of a tungsten film, copper- A two-layer structure in which a copper film is laminated on a magnesium-aluminum alloy film, and a copper film is laminated on a titanium film. Layered two-layer structure, two-layer structure with copper film laminated on tungsten film, titanium film or titanium nitride A film is laid out, with an aluminum film or copper film layered on top of it, and then a titanium film is laid on top of that. Alternatively, a three-layer structure forming a titanium nitride film, a molybdenum film or a molybdenum nitride film, and on the same An aluminum film or copper film is laminated on top of that, and then a molybdenum film or nitride film is placed on top of that. Some materials have a three-layer structure that forms a ribdenum film. These can be indium oxide, tin oxide, or zinc oxide. Oxides such as the above may also be used. In addition, if copper containing manganese is used, the shape will be altered by etching. This is preferable because it improves controllability.

[0074] The materials that can be used for the various insulating layers constituting the display device of this embodiment are as follows: , resins such as acrylic resin, polyimide resin, epoxy resin, silicone resin, and silicone oxide Cone, silicon oxide nitride, silicon nitride, silicon nitride, aluminum oxide, etc. Examples include mechanical insulating materials.

[0075] In this specification, silicon oxidnitride is defined as having a composition that contains more oxygen than nitrogen. It has a high content. Also, silicon nitride oxide, in terms of its composition, contains more nitrogen than oxygen. It has a high content of the raw material.

[0076] The circuit board 150B includes a reflective layer that reflects the light from the light-emitting diode and a light-shielding layer that blocks the light. It may have one or both layers.

[0077] As shown in Figures 2(C) and 3(A), the light-emitting diodes provided on the LED substrate 150A In 110a, the electrode 116 is electrically connected to the conductive layer 190a provided on the circuit board 150B. The electrodes 112 are electrically connected to the conductive layer 190b provided on the circuit board 150B. They are connected. Similarly, in the light-emitting diode 110b provided on the LED board 150A The electrode 116 is electrically connected to the conductive layer 190c provided on the circuit board 150B, and The pole 112 is electrically connected to the conductive layer 190d provided on the circuit board 150B.

[0078] For example, the electrode 116 of the light-emitting diode 110a and the conductive layer 190a are connected to the conductor 117a. They are electrically connected via this. This connects transistor 120a and light-emitting diode 1 10a can be electrically connected. Similarly, electrode 11 of light-emitting diode 110b 6 and the conductive layer 190c are electrically connected via the conductor 117c. The transistor 120b and the light-emitting diode 110b can be electrically connected. Electrode 116 functions as a pixel electrode for light-emitting diodes 110a and 110b.

[0079] Furthermore, the electrode 112 of the light-emitting diode 110a and the conductive layer 190b are connected via the conductor 117b. They are electrically connected. The electrode 112 of the light-emitting diode 110b and the conductive layer 190d The two are electrically connected via the conductor 117d. Electrode 112 is connected to the light-emitting diode 1 It functions as a common electrode for 10a and 110b.

[0080] Conductors 117a to 117d may contain conductive pastes such as silver, carbon, copper, or gold. , and bumps such as solder can be suitably used. Also, conductive materials 117a to 117d Electrodes 112, 116, and conductive layers 190a, 190b, 190c, which are connected to either of the electrodes. Each of the 190d components is a conductive material with low contact resistance with the conductors 117a to 117d. It is preferable to use silver paste. For example, when using silver paste for the conductors 117a to 117d. The conductive materials connected to these are aluminum, titanium, copper, silver (Ag), and palladium. If the contact is made of an alloy of (Pd) and copper (Cu) (Ag-Pd-Cu(APC)), Low resistance is desirable.

[0081] In Figure 2(C), the conductors 117a to 117d are provided on the circuit board 150B side, and the LED board 1 An example of bonding 50A and circuit board 150B is shown. Alternatively, conductive materials 117a~117 d is provided on the LED board 150A side, and the LED board 150A and the circuit board 150B are bonded together. You may do so.

[0082] Furthermore, multiple light-emitting diodes may be electrically connected to a single transistor.

[0083] The space between the LED substrate 150A and the circuit board 150B is filled with a filler layer 125. This is preferable. The packed layer 125 ensures close contact between each light-emitting diode and the circuit board 150B. The bonding strength can be increased. The filling layer 125 can be, for example, acrylic resin, poly Various resins such as imide resins, epoxy resins, and silicone resins can be used.

[0084] Furthermore, the light emitted by the light-emitting diode passes through the packed layer 125 and reaches the adjacent pixel, displaying A phenomenon called crosstalk can occur where particles are ejected outside the device. Therefore, it is preferable to use a colored resin such as black resin or brown resin in the packed layer 125. For example, a resin containing carbon black can be used for the filling layer 125. This suppresses light leakage to adjacent pixels, thereby improving the display quality of the display device.

[0085] Furthermore, when the substrate 101 is peeled off using laser light in a later process, the filling layer 125 will be... It is preferable to absorb the laser light. This allows the circuit board 150B to be affected by the laser light. This can suppress damage to the various circuits and elements that are formed.

[0086] After bonding the LED board 150A and the circuit board 150B together, the board 101 is peeled off. This is preferable. There are no limitations on the method of peeling off the substrate 101.

[0087] Figure 3(B) shows an example in which the laser beam 128 is irradiated onto the entire surface of the substrate 101. For example, When a sapphire substrate is used for substrate 101 and gallium nitride is used for semiconductor layer 113, laser light 1 By irradiating with ultraviolet light (as shown in 28), the substrate 101 can be peeled off (Figure 4(A)). .

[0088] As for the laser, excimer lasers, solid-state lasers, etc. can be used. For example, die Ode-excited solid-state lasers (DPSS) may also be used.

[0089] A release layer may be provided between the substrate 101 and the light-emitting diodes 110a and 110b. After peeling off 101, the light-emitting diodes 110a and 110b may be exposed, and the peeling layer The peeling layer may be exposed. The peeling layer may be one of the components of the display device 100A.

[0090] The release layer can be formed using organic or inorganic materials.

[0091] Examples of organic materials that can be used in the release layer include polyimide resin and acrylic resin. Epoxy resin, polyamide resin, polyimidoamide resin, siloxane resin, benzocycline Examples include lobten resins and phenolic resins.

[0092] Inorganic materials that can be used in the release layer include tungsten, molybdenum, titanium, and Nylon, niobium, nickel, cobalt, zirconium, zinc, ruthenium, rhodium, A metal containing an element selected from radium, osmium, iridium, and silicon, the element Examples include alloys containing the element, or compounds containing the element. The crystal structure of the silicon-containing layer is It can be amorphous, microcrystalline, or polycrystalline.

[0093] Next, as shown in Figure 4(B), a color conversion layer CCR is formed on the light-emitting diode 110a. Furthermore, it is preferable to form a red colored layer (CFR) on the color conversion layer (CCR).

[0094] The color conversion layer (CCR) has the function of converting blue light into red light. It can be installed in contact with the photodiode 110a. Alternatively, it can be installed in contact with the light-emitting diode 110a. An insulating layer may be provided between the color conversion layer (CCR) and the other components.

[0095] A blue colored layer may be formed on the light-emitting diode 110b. This allows for an increase in the purity of blue light. If a blue colored layer is not provided, the manufacturing process is It can be simplified.

[0096] For the color conversion layer, phosphors or quantum dots (QDs) are used. This is preferable. In particular, quantum dots have a narrow peak width in their emission spectrum and emit light with good color purity. This can be achieved. This allows for an improvement in the display quality of the display device.

[0097] The color conversion layer is produced using various methods, including droplet ejection (e.g., inkjet), coating, imprint, and various other methods. It can be formed using printing methods (screen printing, offset printing), etc. Also, quantity Color conversion films, such as sub-dot films, may also be used.

[0098] When processing the film that will become the color conversion layer, it is preferable to use photolithography. In photolithography, a resist mask is formed on the thin film to be processed, and etching is performed. A method for processing the thin film by a blob or the like to remove the resist mask, and a method for processing a photosensitive thin film One method involves forming a thin film, then exposing it to light and developing it to process it into a desired shape. For example, a thin film is deposited using a material in which quantum dots are mixed with a photoresist, and then photolithography is performed. By processing the thin film using the Graph method, island-like color conversion layers can be formed. .

[0099] There are no particular limitations on the materials that make up quantum dots; for example, Group 14 elements and Group 15 elements. Elements, Group 16 elements, compounds consisting of multiple Group 14 elements, belonging to Groups 4 through 14. Compounds of an element and a Group 16 element, compounds of a Group 2 element and a Group 16 element, and a Group 13 element Compounds with Group 15 elements, compounds with Group 13 and Group 17 elements, and compounds with Group 14 and Group 1 Compounds with Group 5 elements, compounds with Group 11 and Group 17 elements, iron oxides, titanium oxides Examples include chalcogenide spinels and various semiconductor clusters.

[0100] Specifically, cadmium selenide, cadmium sulfide, cadmium telluride, and zinc selenide. Zinc oxide, zinc sulfide, zinc telluride, mercury sulfide, mercury selenide, mercury telluride, arsenide Indium, indium phosphide, gallium arsenide, gallium phosphide, indium nitride, gallium nitride Indium antimonide, gallium antimonide, aluminum phosphide, aargonide Aluminum, aluminum antimonide, lead selenide, lead telluride, lead sulfide, lead selenide Indium, indium telluride, indium sulfide, gallium selenide, arsenic sulfide, selenium Arsenic ions, arsenic telluride, antimony sulfide, antimony selenide, antimony telluride, sulfur Bismuth bismuth, bismuth selenide, bismuth telluride, silicon, silicon carbide, germanium Tin, selenium, tellurium, boron, carbon, phosphorus, boron nitride, boron phosphide, boron arsenide, Aluminum nitride, aluminum sulfide, barium sulfide, barium selenide, barium telluride Um, calcium sulfide, calcium selenide, calcium telluride, beryllium sulfide, se Beryllium lenide, beryllium telluride, magnesium sulfide, magnesium selenide, sulf Germanium selenium, germanium selenide, germanium telluride, tin sulfide, tin selenide, Tin telluride, lead oxide, copper fluoride, copper chloride, copper bromide, copper iodide, copper oxide, copper selenide, oxide Nickel, cobalt oxide, cobalt sulfide, iron oxide, iron sulfide, manganese oxide, molybdenum sulfide Vanadium oxide, tungsten oxide, tantalum oxide, titanium oxide, zirconium oxide Silicon nitride, germanium nitride, aluminum oxide, barium titanate, selenium and zinc Compounds of cadmium, compounds of indium, arsenic, and phosphorus, and compounds of cadmium, selenium, and sulfur Compounds, compounds of cadmium, selenium, and tellurium, compounds of indium, gallium, and arsenic, Compounds of indium, gallium, and selenium; compounds of indium, selenium, and sulfur; copper and indium Examples include compounds of zinc and sulfur, and combinations thereof. Furthermore, any composition is possible. You may also use so-called alloy-type quantum dots, which are expressed as ratios.

[0101] Examples of quantum dot structures include core-type, core-shell-type, and core-multishell-type. Furthermore, because quantum dots have a high proportion of surface atoms, they are highly reactive and do not aggregate. They are prone to hardening. Therefore, a protective agent is attached to the surface of the quantum dots or protective groups are provided. It is preferable that the protective agent is attached or a protective group is provided. This prevents aggregation and increases solubility in the solvent. Furthermore, it reduces reactivity. Furthermore, it is also possible to improve electrical stability.

[0102] As the size of a quantum dot decreases, the band gap increases, allowing it to reach the desired wavelength. The size is adjusted appropriately so that light is obtained. Because the light emitted by quantum dots shifts towards the blue side, that is, towards the higher energy side, quantum dots By changing the size, the wavelength range of the spectrum in the ultraviolet, visible, and infrared regions can be changed. The emission wavelength can be adjusted across a wide range. The size (diameter) of the quantum dot is For example, 0.5 nm to 20 nm, preferably 1 nm to 10 nm. Quantum The narrower the size distribution of the dots, the narrower the emission spectrum becomes, resulting in better color purity. Light can be obtained. Furthermore, the shape of the quantum dot is not particularly limited; it can be spherical, rod-shaped, or disc-shaped. , or other shapes may be used. A quantum rod, which is a rod-shaped quantum dot, has directionality. It has the function of emitting light.

[0103] A colored layer is a colored layer that transmits light in a specific wavelength range. For example, red, green, blue, or A color filter that transmits light in the yellow wavelength range can be used. Materials that can be used include metal materials, resin materials, and resin materials containing pigments or dyes. Some examples include:

[0104] Based on the above, the display device 100A shown in Figure 1 can be manufactured.

[0105] Figure 5(A) shows a cross-sectional view of the display device 100B.

[0106] The display device 100B consists of an insulating layer 188, an insulating layer 103, a light-shielding layer BM, a colored layer CFB, and It differs from the display device 100A in that it has a protective layer 126. The other configurations are the same as those of the display device 100A. It is the same as A.

[0107] In the display device 100B, a conductive layer 187 and an insulating layer 186 are provided on the insulating layer 185. An insulating layer 188 is provided on the conductive layer 187. Here, the height of the upper surface of the conductive layer 187 is It matches or approximately matches the height of the top surface of the insulating layer 186. For example, an opening in the insulating layer 186. After providing a conductive layer 187 to fill the opening, a planarization treatment is performed, The height of the upper surface of the conductive layer 187 and the height of the upper surface of the insulating layer 186 can be made the same. 88 has an opening that reaches the conductive layer 187, and inside the opening is the conductive layer 189 It is embedded.

[0108] The display device 100B has an insulating layer 103 between the light-emitting diode 110a and the color conversion layer CCR. It has. The insulating layer 103 is, for example, the peeling layer mentioned above, or the light-emitting diode 110a, 1 A protective layer 10b is one example.

[0109] It is preferable that a light-shielding layer BM is provided between adjacent pixels. In Figure 5(A), A light-shielding layer BM is provided on the insulating layer 103, and the edges of the light-shielding layer BM are covered, and the light-emitting diode A color conversion layer CCR is provided in a position overlapping with D110a, covering the edge of the light-shielding layer BM, and This shows an example where a colored layer CFB is provided in a position overlapping with the light-emitting diode 110b. By providing the light layer BM, for example, the light emitted by the light-emitting diode 110a is converted to the color conversion layer CC Without going through R or the colored layer CFR, the protective layer 102, insulating layer 103, etc., pass through the display device 100 This can suppress the phenomenon of material being ejected outside of B.

[0110] In the display device 100B, a blue colored layer CFB is provided on the light-emitting diode 110b. The light emitted by the light-emitting diode 110b of the blue pixel is colored blue by the colored layer CFB. The purity of the light is increased and emitted outside the display device 100B.

[0111] A protective layer 126 may be provided to cover the color conversion layer and the coloring layer. This includes resins such as acrylic resin, polyimide resin, epoxy resin, and silicone resin, as well as oxide resin. Silicon oxide nitride, silicon nitride, silicon nitride, aluminum oxide, etc. Inorganic insulating materials can be used. Also, as the protective layer 126, a resin film or the like can be used. You may also use Lum.

[0112] Figure 5(B) shows a cross-sectional view of the display device 100C.

[0113] In the display device 100C, the channel length is determined by transistors 120a and 120b. Different examples are shown. The rest of the configuration is the same as that of the display device 100A.

[0114] A transistor 120a drives the light-emitting diode 110a, and a light-emitting diode 110b The driving transistor 120b is specified by the transistor's size, channel length, and channel width. At least one of the following may be different from the others: the structure, etc.

[0115] Depending on the amount of current required to emit light at the desired brightness, each subpixel exhibits a different color, The channel length and / or channel width of the ZISTA may be changed.

[0116] Figure 6 shows a cross-sectional view of the display device 100D.

[0117] The display device 100D has a transistor (transistor) having a channel formation region on the substrate 131. Transistors (130a, 130b) and transistors having a channel formation region in a metal oxide (transistors) It has a stacked structure consisting of (120a, 120b) and .

[0118] A single-crystal silicon substrate is preferred as the substrate 131. In other words, the display device 100D is A transistor having silicon in its channel formation region (hereinafter also referred to as a Si transistor) And, a transistor that uses a metal oxide in the channel formation region (hereinafter also known as an OS transistor) It is preferable to have both (i.e., and ).

[0119] Transistors 130a and 130b consist of a conductive layer 135, an insulating layer 134, and an insulating layer 136, in pairs. It has a low-resistance region 133. The conductive layer 135 functions as a gate. The insulating layer 134 is It is located between the conductive layer 135 and the substrate 131 and functions as a gate insulating layer. Insulating layer 13 6 is provided covering the side surface of the conductive layer 135 and functions as a sidewall. A pair of low The resistive region 133 is an impurity-doped region on the substrate 131, and one side is tra One end functions as the source of the transistor, while the other acts as the drain.

[0120] Furthermore, an element isolation is provided between two adjacent transistors so as to be embedded in the substrate 131. A layer 132 is provided.

[0121] An insulating layer 139 is provided covering transistors 130a and 130b, and a conductive layer 139 is provided on the insulating layer 139. A conductive layer 138 is provided. Through a conductive layer 137 embedded in the opening of the insulating layer 139 The conductive layer 138 is electrically connected to one of the pair of low-resistance regions 133. Layer 137 electrically connects the conductive layer 138 to one of the pair of low-resistance regions 133. It functions as a stool. In addition, an insulating layer 141 is provided covering the conductive layer 138, and on the insulating layer 141 A conductive layer 142 is provided thereon. The conductive layer 138 and the conductive layer 142 are each used as wiring. It functions in this way. In addition, insulating layers 143 and 152 are provided covering the conductive layer 142, and Transistors 120a and 120b are provided on the margin layer 152. Since the stacked structure up to the color layer CFR is the same as that of the display device 100A, a detailed explanation will be omitted. .

[0122] Transistors 120a, 120b, 130a, and 130b are transistors that constitute the pixel circuit. The starter and the drive circuit for driving the pixel circuit (gate driver and source driver) It can be used as a transistor that constitutes one or both of the following. The 120a, 120b, 130a, and 130b are designed to accommodate various circuits such as arithmetic circuits and memory circuits. It can be used as a transistor.

[0123] For example, for the transistors of the pixel circuit and the gate driver, transistors 120a and 120b which are OS transistors can be used, and for the transistors of the source driver, transistors 130a and 130b which are Si transistors can be used. Or, for the pixel circuit, transistors 120a and 120b which are OS transistors can be used, and for the transistors of the gate driver and the source driver, transistors 130a and 130b which are Si transistors can be used. For example, for the transistors of the pixel circuit and the gate driver, transistors 120a and 120b which are OS transistors can be used, and for the transistors of the source driver, transistors 130a and 130b which are Si transistors can be used. Or, for the pixel circuit, transistors 120a and 120b which are OS transistors can be used, and for the transistors of the gate driver and the source driver, transistors 130a and 130b which are Si transistors can be used. For example, for the transistors of the pixel circuit and the gate driver, transistors 120a and 120b which are OS transistors can be used, and for the transistors of the source driver, transistors 130a and 130b which are Si transistors can be used. Or, for the pixel circuit, transistors 120a and 120b which are OS transistors can be used, and for the transistors of the gate driver and the source driver, transistors 130a and 130b which are Si transistors can be used. For example, for the transistors of the pixel circuit and the gate driver, transistors 120a and 120b which are OS transistors can be used, and for the transistors of the source driver, transistors 130a and 130b which are Si transistors can be used. Or, for the pixel circuit, transistors 120a and 120b which are OS transistors can be used, and for the transistors of the gate driver and the source driver, transistors 130a and 130b which are Si transistors can be used. For example, for the transistors of the pixel circuit and the gate driver, transistors 120a and 120b which are OS transistors can be used, and for the transistors of the source driver, transistors 130a and 130b which are Si transistors can be used. Or, for the pixel circuit, transistors 120a and 120b which are OS transistors can be used, and for the transistors of the gate driver and the source driver, transistors 130a and 130b which are Si transistors can be used. For example, for the transistors of the pixel circuit and the gate driver, transistors 120a and 120b which are OS transistors can be used, and for the transistors of the source driver, transistors 130a and 130b which are Si transistors can be used. Or, for the pixel circuit, transistors 120a and 120b which are OS transistors can be used, and for the transistors of the gate driver and the source driver, transistors 130a and 130b which are Si transistors can be used.

[0124] With such a configuration, not only the pixel circuit but also drive circuits and the like can be formed directly under the light-emitting diodes, so that the display device can be miniaturized compared with the case where a drive circuit is provided outside the display unit. Also, a display device with a narrow border (a narrow non-display area) can be realized. With such a configuration, not only the pixel circuit but also drive circuits and the like can be formed directly under the light-emitting diodes, so that the display device can be miniaturized compared with the case where a drive circuit is provided outside the display unit. Also, a display device with a narrow border (a narrow non-display area) can be realized. With such a configuration, not only the pixel circuit but also drive circuits and the like can be formed directly under the light-emitting diodes, so that the display device can be miniaturized compared with the case where a drive circuit is provided outside the display unit. Also, a display device with a narrow border (a narrow non-display area) can be realized. With such a configuration, not only the pixel circuit but also drive circuits and the like can be formed directly under the light-emitting diodes, so that the display device can be miniaturized compared with the case where a drive circuit is provided outside the display unit. Also, a display device with a narrow border (a narrow non-display area) can be realized.

[0125] As described above, in the display device according to one aspect of the present invention, since a plurality of light-emitting diodes and a plurality of transistors can be bonded together at once, the manufacturing cost of the display device can be reduced and the yield can be improved. Also, by combining micro LEDs and transistors using metal oxides, a display device with reduced power consumption can be realized. As described above, in the display device according to one aspect of the present invention, since a plurality of light-emitting diodes and a plurality of transistors can be bonded together at once, the manufacturing cost of the display device can be reduced and the yield can be improved. Also, by combining micro LEDs and transistors using metal oxides, a display device with reduced power consumption can be realized. As described above, in the display device according to one aspect of the present invention, since a plurality of light-emitting diodes and a plurality of transistors can be bonded together at once, the manufacturing cost of the display device can be reduced and the yield can be improved. Also, by combining micro LEDs and transistors using metal oxides, a display device with reduced power consumption can be realized. As described above, in the display device according to one aspect of the present invention, since a plurality of light-emitting diodes and a plurality of transistors can be bonded together at once, the manufacturing cost of the display device can be reduced and the yield can be improved. Also, by combining micro LEDs and transistors using metal oxides, a display device with reduced power consumption can be realized.

[0126] [Configuration Example 2 of Display Device] FIG. 7(A) shows a cross-sectional view of a display device 100E, and FIG. 7(B) shows a cross-sectional view of a display device 100F. FIG. 7(A) shows a cross-sectional view of a display device 100E, and FIG. 7(B) shows a cross-sectional view of a display device 100F. <​​​​​​​​Here, due to differences in lattice constants, it is difficult to fabricate each color of light-emitting diode on the same substrate. In this embodiment, the display device combines one type of light-emitting diode with a color conversion layer. This enables full-color display. Therefore, the light-emitting diodes fabricated on the substrate are 1 Any type is fine. Therefore, the display device of this embodiment has a circuit board directly equipped with a light-emitting diode. It can be manufactured by forming a do.

[0129] Configuration of the substrate 151 to the conductive layer 189 in the display device 100E and the display device 100F Since it is the same as circuit board 150B shown in Figure 2(B), a detailed explanation will be omitted.

[0130] On the conductive layer 189 and the insulating layer 186 are the insulating layer 122 and the electrode 1 of the light-emitting diode. 12 and electrode 116 are provided.

[0131] For example, the electrode 112 of the light-emitting diode 110c is in contact with the conductive layer 189, and electrically They are connected. This allows the transistor 120a and the light-emitting diode 110c to be electrically connected. It can be connected to the electrode 11. 2 functions as a pixel electrode for light-emitting diodes 110c and 110d. Also, electrode 116 This functions as a common electrode for light-emitting diodes 110c and 110d.

[0132] Here, electrodes 112, 116, and insulating layer 122 each have the same or They are roughly in agreement. For example, an opening is made in the insulating layer 122, and electrode 1 is made to fill the opening. After forming electrodes 12 and 116, a planarization process is performed to form electrodes 112 and 116 and an insulating layer. The height of the top surface of 122 can be made uniform. This allows the semiconductor layer 113 to be placed on a flat surface. , the light-emitting layer 114, and the semiconductor layer 115 can be formed.

[0133] The semiconductor layer 113 is provided on the electrode 112. The semiconductor layer 113 is electrically connected. The light-emitting layer 114 is provided on the semiconductor layer 113, and the semiconductor layer 115 is provided on the light-emitting layer 114.

[0134] An insulating layer 123 is provided so as to cover the semiconductor layer 113, the light-emitting layer 114, and the semiconductor layer 115. The insulating layer 123 is provided with an opening reaching the semiconductor layer 115 and an opening reaching the electrode 116, and conductive layers 124a and 124b are embedded inside the openings. [[ID=2​​​​​​​​​​​​​​​​​​​​​​​This suppresses the phenomenon of data being ejected outside the display devices 100E and 100F. ru.

[0137] Furthermore, as shown in Figure 7(B), an opening is provided in the insulating layer 123 to surround the light-emitting diode. A light-shielding layer BM may be embedded in the opening. This allows the light emission of the light-emitting diode to be directed toward the adjacent This suppresses the reach of adjacent pixels, thereby improving the display quality of the display device 100F. .

[0138] [Example of display device configuration 3] The configuration and manufacturing method of the display device 100G will be explained using Figures 8(A) and 8(B). Furthermore, using Figures 8(A), 9(A), and 9(B), the configuration of the display device 100H and The manufacturing method will be explained.

[0139] Display devices 100G and 100H each have transistors directly connected to the LED board. It is manufactured by forming a circuit that includes the following:

[0140] As described above, the display device of this embodiment combines one type of light-emitting diode with a color conversion layer. By combining them, full-color display is achieved. Therefore, all the light-emitting elements of the pixels are placed on a single substrate. An ion can be formed on the substrate. Therefore, transistors and the like can be further added to the substrate. The display device of this embodiment can be manufactured by directly forming the circuit that includes it.

[0141] In the fabrication of the display device 100G and the display device 100H, first, as shown in Figure 8(A) This forms a laminated structure from the substrate 101 to the conductive layer 187.

[0142] Configuration of the substrate 101 to the protective layer 102 in display devices 100G and 100H Since this is the same as the LED board 150A shown in Figure 2(A), a detailed explanation will be omitted.

[0143] An insulating layer 104 is provided on the protective layer 102. The insulating layer 104 has a semiconductor layer 11 An opening reaching 3 and an opening reaching the semiconductor layer 115 are provided, and inside the opening Conductive layers 118a and 118b are embedded therein.

[0144] The conductive layers 118a, 118b, and the insulating layer 104 each have matching or approximately the same height on their upper surfaces. They are almost identical. As a result, electrodes 112 and 116 are placed on a flat surface, and furthermore, Rangistas 120a, 120b, etc. can be formed.

[0145] On the insulating layer 104, electrodes 112 and 116 of the light-emitting diode and the insulating layer 106 are provided. The conductive layer 118a is a plug that electrically connects the semiconductor layer 113 and the electrode 112. It functions as follows: The conductive layer 118b electrically connects the semiconductor layer 115 and the electrode 116. It functions as a plug.

[0146] In addition, in display devices 100G and 100H, the electrode 116 is a light-emitting diode. It functions as a pixel electrode for 110a and 110b. Also, electrode 112 is a light-emitting diode 1 It functions as a common electrode for 10a and 110b.

[0147] The electrodes 112, 116, and the insulating layer 106 each have matching or approximately matching upper surface heights. This allows for the formation of transistors 120a, 120b, etc., on a flat surface. It is possible.

[0148] An insulating layer 108 and an insulating layer 152 are provided on the insulating layer 106 and on the electrode 112. The insulating layer 108 and insulating layer 152 are provided with openings that reach the electrode 116. A plug that electrically connects the electrode 116 and the transistor is embedded inside the opening. It is fitted in. The plug has a conductive layer 107 that is in contact with the side surface of the opening and the upper surface of the electrode 116. It is preferable to have b and a conductive layer 107a embedded inside the conductive layer 107b. In this case, a conductive material that does not easily allow hydrogen and oxygen to diffuse is used as the conductive layer 107b. It is preferable.

[0149] Structure from the insulating layer 152 to the conductive layer 187 in display devices 100G and 100H The composition is shown in Figure 2(B), except that it has conductive layers 161a, 184c, and 184d. It is the same as circuit board 150B.

[0150] The conductive layer 161a is formed using the same material and process as the conductive layer 161 of the transistor. This is possible. The conductive layer 184c is formed using the same material and process as the conductive layer 184a. The conductive layer 184d is formed using the same material and process as the conductive layer 184b. It is possible.

[0151] Insulating layer 163, insulating layer 164, insulating layer 181, insulating layer 182, insulating layer 183, and insulating layer 185 is provided with an opening that reaches the conductive layer 161a, and inside the opening is the conductive layer A plug is embedded that electrically connects 187 and the conductive layer 161a. The device has the aforementioned conductive layer 184c and conductive layer 184d.

[0152] One of the pair of conductive layers 166 of the transistor consists of conductive layer 184a, conductive layer 184b, and conductive layer 187, conductive layer 184c, conductive layer 184d, conductive layer 161a, conductive layer 107a, and conductive It is electrically connected to electrode 116 via layer 107b.

[0153] The display device 100G forms the stacked structure shown in Figure 8(A), and then, as shown in Figure 8(B)... Furthermore, a color conversion layer CCR is formed at a position overlapping with the light-emitting diode 110a, and the color conversion layer It is fabricated by forming a red colored layer (CFR) on top of the CCR.

[0154] Furthermore, an insulating layer 186 may be provided on the insulating layer 183, and a color conversion layer may be provided on the insulating layer 186. CCR may form.

[0155] As shown in Figure 8(B), the light emitted by the light-emitting diode 110a is directed to the protective layer 102 and the insulating layer Multiple insulating layers from 104 to insulating layer 186 are incident on the color conversion layer CCR, and color conversion The CCR layer converts the light from blue to red, and the CFR colored layer enhances the purity of the red light. It is then ejected to the outside of the display device 100G.

[0156] As shown in Figure 8(B), the blue light emitted by the light-emitting diode 110b is directed to the protective layer 102. Through multiple insulating layers from insulating layer 104 to insulating layer 186, the outside of the display device 100G It is launched.

[0157] The display device 100H shown in Figure 9(B) is formed by first creating the laminated structure shown in Figure 8(A), and then using a substrate 1 01 is peeled off (Figure 9(A)), and the colored layer is applied to the surface exposed by peeling using adhesive layer 192. It can be manufactured by bonding together substrates 191 on which CFR and color conversion layer CCMR are provided. ru.

[0158] The adhesive layer 192 contains photocuring adhesives such as UV-curing adhesives, reaction-curing adhesives, and thermosetting adhesives. Various types of curing adhesives, such as adhesives and anaerobic adhesives, can be used. Adhesive sheets can also be used. It's okay to be there.

[0159] Furthermore, the substrate 101 is coated with an adhesive layer 192, and the colored layer CFR and the color conversion layer CCMR are also coated. The provided substrate 191 may be bonded together. In other words, it is not necessary to peel off the substrate 101. .

[0160] At this time, it is preferable to reduce the thickness of the substrate 101 by polishing or the like. This can improve the efficiency of extracting light emitted by light-emitting diodes. Furthermore, it can contribute to the thinning of display devices. This also makes it possible to reduce weight and make the material lighter.

[0161] As shown in Figure 9(B), the light emitted by the light-emitting diode 110a is transmitted through the adhesive layer 192. The light is incident on the color conversion layer CCR, and is converted from blue to red by the color conversion layer CCR, and then enters the colored layer CF The red light is purified by R and emitted to the outside of the display device 100H.

[0162] As shown in Figure 9(B), the blue light emitted by the light-emitting diode 110b illuminates the adhesive layer 192. It is then ejected to the outside of the display device 100H.

[0163] As described above, the display device according to one aspect of the present invention comprises a plurality of light-emitting diodes and a plurality of transistors The two can be bonded together at once. Alternatively, a display device according to one aspect of the present invention is a circuit base It can be manufactured by directly forming a light-emitting diode on a plate. Alternatively, according to one aspect of the present invention... The display device is manufactured by directly forming transistors and other components on a substrate on which light-emitting diodes are formed. Therefore, it is possible to reduce the manufacturing cost of the display device and improve the yield. It is possible.

[0164] Furthermore, by combining micro-LEDs with transistors using metal oxides, This enables the creation of power-efficient display devices.

[0165] This embodiment can be appropriately combined with other embodiments. Furthermore, this specification Furthermore, if multiple configuration examples are shown within a single embodiment, the configuration examples may be combined as appropriate. It is possible to do so.

[0166] (Embodiment 2) In this embodiment, the configuration of a transistor that can be used in a display device according to one aspect of the present invention An example will be explained using Figures 10 and 11.

[0167] The transistor of this embodiment can be made smaller, thus increasing the resolution of the display device. Furthermore, it is easy to apply to electronic devices with relatively small display units.

[0168] In this specification, the term "transistor" includes at least a gate, a drain, and a source. Each element has three terminals. And the drain (drain terminal, drain region, A channel between the drain electrode and the source (source terminal, source region, or source electrode). It has a region where channels are formed (channel formation region), and through the channel formation region This allows current to flow between the source and the drain. In other words, the channel-forming region is the region where electric current primarily flows.

[0169] The source and drain functions may vary depending on whether transistors with different polarities are used or the circuit operation. The positions may be reversed if the direction of the current changes. For this reason, this specification, etc. In some cases, the terms source and drain can be used interchangeably.

[0170] Channel length refers to, for example, the length of the semiconductor (or transistor) in a top view of a transistor. The region where the part of the semiconductor through which current flows when the gate electrode is ON and the gate electrode overlap each other. , or the source (source region or source electrode) and drain in the channel formation region. This refers to the distance between the (drain region or drain electrode) and the transistor. In this case, the channel length is not necessarily the same value in all regions. That is, one channel The channel length of a zista may not be fixed to a single value. Therefore, in this specification, The channel length is any one value, maximum value, minimum value, or average value in the channel formation region. Set this as the value.

[0171] Channel width refers to, for example, the channel width of a semiconductor (or transistor) in a top view of a transistor. The region where the part of the semiconductor through which current flows when the gate electrode is ON and the gate electrode overlap each other. , or the channel shape in the channel formation region, perpendicular to the channel length direction. This refers to the length of the region. Note that in a single transistor, the channel width is the same across all regions. They don't necessarily take the same value. That is, the channel width of a single transistor is not a single value. It may not be fixed. Therefore, in this specification, the channel width is defined as the channel formation region. It is one of the following values: maximum, minimum, or average.

[0172] In this specification, depending on the transistor structure, channel formation may actually occur. The channel width in the region (hereinafter also called the "effective channel width") and the transistor The channel width shown in the top view (hereinafter also referred to as the "apparent channel width") and This can vary. For example, if the gate electrode covers the side of the semiconductor, the effective channel The width can become larger than the apparent channel width, and its effects may become too significant to ignore. For example, in a transistor that is very small and whose gate electrode covers the side of the semiconductor, the side of the semiconductor... In some cases, the proportion of channel-forming regions that are formed may increase. The effective channel width is larger than the channel width.

[0173] In such cases, it can be difficult to estimate the effective channel width through actual measurements. For example, in order to estimate the effective channel width from the design value, the shape of the semiconductor is known. An assumption is necessary. Therefore, if the shape of the semiconductor is not precisely known, the effective method is It is difficult to accurately measure channel width.

[0174] In this specification, when simply referred to as "channel width," it may refer to the apparent channel width. Yes. Or, in this specification, when simply referred to as channel width, it means effective channel width. This may refer to channel length, channel width, effective channel width, and apparent channel width. Channel width, etc., are measured using TEM (Transmission Electron Microscope). The value can be determined by analyzing images such as those from an microscope.

[0175] Furthermore, semiconductor impurities refer to components other than the main components that make up the semiconductor, for example, concentrated Elements with a concentration of less than 0.1 atomic percent can be considered impurities. The presence of impurities can, for example, In some cases, this can lead to an increase in the defect level density of semiconductors or a decrease in crystallinity. If the semiconductor is an oxide semiconductor, impurities that change the properties of the semiconductor include, for example, Group 1 elements, Group 2 elements, Group 13 elements, Group 14 elements, Group 15 elements, oxide semiconductors Other components besides the main component include transition metals, such as hydrogen, lithium, sodium, silicon, These include boron, phosphorus, carbon, and nitrogen. Note that water can also function as an impurity. For example, the inclusion of impurities can cause oxygen vacancies (V) in oxide semiconductors. O ) may be formed be.

[0176] In this specification, the term "insulator" may be replaced with "insulating film" or "insulating layer." Yes, it is possible. Furthermore, the term "conductor" can be replaced with "conductive film" or "conductive layer." Furthermore, the term "semiconductor" can be replaced with "semiconductor film" or "semiconductor layer."

[0177] In this specification, metal oxide refers to metals in a broad sense. It is an oxide. Metal oxides are oxide insulators and oxide conductors (including transparent oxide conductors). Oxide semiconductors (also called OS) They are classified into the following categories. For example, when a metal oxide is used in the semiconductor layer of a transistor, the metal Oxides are sometimes referred to as oxide semiconductors. Therefore, when referring to them as OS transistors... In this context, it can be rephrased as a transistor having a metal oxide or oxide semiconductor. ru.

[0178] Figure 10 shows a semiconductor device having transistor 200A. Figure 10(A) shows the semiconductor These are top views of the body apparatus, and Figures 10(B) to 10(D) are, respectively, in Figure 10(A). This is a cross-sectional view between the dashed lines A1-A2, A3-A4, and A5-A6. Note that Figure 10( Figure B) can be considered a cross-sectional view of transistor 200A in the channel length direction. Figure 10(C) is This can also be described as a cross-sectional view of transistor 200A in the channel width direction. Note that in Figure 10(A), Some elements have been omitted for clarity in the diagram.

[0179] The semiconductor device shown in Figure 10 has an insulator 212 on a substrate (not shown) and an insulating layer on the insulator 212. Edge body 214, insulator 216 on insulator 214, and on insulator 214 and insulator 216 Transistor 200A, insulator 254 on transistor 200A, and on insulator 254 Insulator 280, insulator 282 on insulator 280, insulator 283 on insulator 282, It has: Insulator 212, Insulator 214, Insulator 216, Insulator 254, Insulator 280, Insulators 282 and 283 function as interlayer films. Furthermore, the semiconductor device is Conductor 240 (conductor 240a and conductor 240b) and insulator 241 (insulator 241a and insulator 241b), and conductor 246 (conductor 2) on insulator 283 and conductor 240. 46a and conductor 246b), and insulator 286 on conductor 246 and insulator 283, It has. Conductors 240a and 240b are connected to transistor 200A and electricity, respectively. It connects electrically and functions as a plug. The insulator 241 is in contact with the side surface of the conductor 240. Conductor 246a is electrically connected to conductor 240a and functions as wiring. Similarly, conductor 246b is electrically connected to conductor 240b and functions as wiring. .

[0180] The insulating material is in contact with the side wall of the opening of the insulating material 254, insulating material 280, insulating material 282, and insulating material 283. An edge member 241a is provided, and the first conductor of the conductor 240a is in contact with the side surface of the insulator 241a. A second conductive material, the conductive material 240a, is provided further inside. The insulator is in contact with the side wall of the opening of the body 254, insulator 280, insulator 282, and insulator 283. A 241b is provided, and the first conductor of the conductor 240b is provided in contact with the side surface of the insulator 241b. Further inside, a second conductor, conductor 240b, is provided. Here, the conductor The height of the top surface of 240 and the height of the top surface of the insulator 283 in the region overlapping with the conductor 246 are It can be done to the same extent. Note that in Figure 10(B), the first conductor and conductor 24 of the conductor 240 The diagram shows a configuration in which a second conductor of 0 is stacked, but the conductor 240 has a single-layer structure. However, it may also be a laminated structure. In this specification, etc., the structure may have a laminated structure. In some cases, ordinal numbers are assigned to distinguish them based on their formation order.

[0181] Transistor 200A is arranged so as to be embedded in insulator 216 conductor 205( Conductors 205a and 205b, and insulators 2 on the insulator 216 and conductor 205 22, an insulator 224 on the insulator 222, an oxide 230a on the insulator 224, and an oxide Oxide 230b on 230a, and oxide 243 (oxide 243a and The oxide 243b) and oxide 230c, the conductor 242a on oxide 243a, and the oxide Conductor 242b on material 243b, oxide 230d on oxide 230c, and oxide 230 The insulator 250 on d and the conductor located on the insulator 250 and overlapping with a portion of the oxide 230c It has 260 (conductor 260a and conductor 260b), and oxide 230c, Side surface of oxide 243a, side surface of oxide 243b, side surface of conductor 242a, and conductor 24 It is in contact with the side surface of 2b. Also, the insulator 282 consists of the conductor 260, the insulator 250, and the oxide 23 It is in contact with the upper surfaces of 0d, oxide 230c, and insulator 280, respectively.

[0182] The insulators 280 and 254 are provided with openings that reach the oxide 230b. In the mouth, oxide 230c, oxide 230d, insulator 250, and conductor 260 are arranged. Furthermore, in the channel length direction of transistor 200A, the conductor 242a and acid A conductor 260 and an insulator 2 between the oxide 243a, the conductor 242b and the oxide 243b 50, oxide 230d, and oxide 230c are provided. The insulator 250 is a conductor. It has a region that contacts the side surface of 260 and a region that contacts the bottom surface of the conductor 260. The oxide 230c has a region in contact with oxide 230b and an area between oxide 230d and insulator 250. Then, the region overlapping with the side surface of the conductor 260, and through the oxide 230d and the insulator 250, It has a region that overlaps with the bottom surface of the conductor 260.

[0183] Oxide 230 consists of oxide 230a on the insulator 224 and oxide 230 on oxide 230a b and an oxide placed on oxide 230b, at least a portion of which is in contact with oxide 230b. It is preferable to have 230c and oxide 230d on oxide 230c.

[0184] In transistor 200A, oxide 230 is oxide 230a, oxide 230b, The diagram shows a configuration in which four layers of oxide 230c and oxide 230d are stacked, but the oxide The substance 230 may have a single-layer structure or a multi-layer structure. The oxide 230 is, for example, an oxide Single layer of substance 230b, two-layer structure of oxide 230a and oxide 230b, oxide 230b and oxide Two-layer structure of material 230c, three-layer structure of oxide 230a, oxide 230b, and oxide 230c A three-layer structure of oxide 230a, oxide 230b, and oxide 230d, or five or more layers. It may also be a laminated structure of oxide 230a, oxide 230b, oxide 230c, Each of the oxides 230d may have a single-layer structure or a multi-layer structure.

[0185] Conductor 260 functions as the first gate (top gate) electrode, and conductor 205 is the It functions as the gate (back gate) electrode of 2. Also, insulator 250, insulator 224, And the insulator 222 functions as a gate insulator. Also, the conductor 242a is the source electric Functioning as either a pole or a drain electrode, the conductor 242b is the source electrode or drain electrode. It functions as the other electrode. In addition, oxide 230 functions as a channel-forming region.

[0186] Transistor 200A contains an oxide 230 (oxide 230a, oxide) which includes a channel formation region. In material 230b, oxide 230c, and oxide 230d), a metal oxide that functions as a semiconductor is used. It is preferable to use an oxide semiconductor.

[0187] Metal oxides that function as semiconductors preferably have a band gap of 2 eV or more. It is more preferable that the band gap be 2.5 eV or higher. Thus, metals with a large band gap By using oxides, the off-current of the transistor can be reduced.

[0188] Transistors using oxide semiconductors in the channel formation region exhibit leakage current in the non-conductive state. Because the current (off-current) is extremely small, it is possible to provide semiconductor devices with low power consumption. Because semiconductor materials can be deposited using methods such as sputtering, highly integrated semiconductor devices can be constructed. It can be used in transistors.

[0189] As oxide 230, for example, In-M-Zn acid having indium, element M, and zinc. Iridescents (elements M include aluminum, gallium, yttrium, tin, copper, vanadium, and beryllium) Um, boron, titanium, iron, nickel, germanium, zirconium, molybdenum, rancid Tan, cerium, neodymium, hafnium, tantalum, tungsten, magnesium, koba It is preferable to use one or more metal oxides selected from such as thut. As material 230, In-Ga oxide, In-Zn oxide, or indium oxide is used. That's fine.

[0190] Transistors using oxide semiconductors have impurities in the channel formation region of the oxide semiconductor and Oxygen deficiency (V O The presence of ( ) can cause electrical characteristics to fluctuate easily, potentially leading to poor reliability. Examples of impurities in oxide semiconductors include hydrogen, nitrogen, alkali metals, and alkaline earth elements. Examples include metals such as iron, nickel, and silicon.

[0191] In particular, hydrogen contained in oxide semiconductors reacts with oxygen bonded to metal atoms to form H2O and Oxygen deficiency may form. Also, hydrogen near the oxygen deficiency may fill the oxygen deficiency. Defect (V O It can form H (also called H) and generate electrons that act as carriers. Some of the elements combine with metal atoms and oxygen to generate electrons that act as carriers. Therefore, a transistor using an oxide semiconductor containing hydrogen tends to have a normally-on characteristic (a characteristic in which a channel exists even when no voltage is applied to the gate electrode and current flows through the transistor). A defect (VH) in which hydrogen enters oxygen vacancies can function as a donor in a metal oxide. However, it is difficult to quantitatively evaluate such defects.

[0192] Therefore, in a metal oxide, it may be evaluated by carrier concentration instead of donor concentration. O Thus, in this specification and the like, as a parameter of a metal oxide, carrier concentration in a state where no electric field is applied may be used instead of donor concentration. That is, the "carrier concentration" described in this specification and the like may sometimes be paraphrased as "donor concentration". Also, the "carrier concentration" described in this specification and the like may be paraphrased as "carrier density". [[ID=Id=19]]

[0193] From the above, in the channel formation region in the oxide semiconductor, it is preferable that hydrogen and oxygen vacancies are reduced as much as possible. Specifically, in the channel formation region of the oxide 230, the hydrogen concentration obtained by secondary ion mass spectrometry (SIMS: Secondary Ion Mass Spectrometry) is less than 1×10 atoms / cm, preferably less than 1×10 atoms / cm, more preferably less than 5×10 atoms / cm, still more preferably less than 1×10 atoms / cm. 20 atoms / cm 3 Preferably 19 atoms / cm 3 18 atoms / cm 3 18 atoms / cm 3 In a semiconductor, the channel formation region is reduced in carrier concentration, resulting in i-type (intrinsic) or actual It is preferable that it be qualitatively i-type.

[0194] The oxide 230 preferably contains at least indium or zinc. In particular, indium It is preferable to include aluminum and zinc. In addition to these, aluminum, gallium, and zinc are also preferable. It is preferable that it contains tungium, tin, etc. Also, boron, titanium, iron, nickel Kel, germanium, zirconium, molybdenum, lanthanum, cerium, neodymium, HAF One of the following: nium, tantalum, tungsten, magnesium, cobalt, etc. It may include multiple species.

[0195] In this specification, metal oxides containing nitrogen are also referred to as metal oxides (metal oxi They are sometimes collectively referred to as (de) metal oxides (met It may also be called al oxynitride.

[0196] Regarding the metal oxide (oxide semiconductor) that can be used for oxide 230, the embodiment This will be explained in detail in section 4.

[0197] The oxide 230 preferably has a layered structure of multiple oxides with different chemical compositions. Furthermore, oxide 230 is the product of multiple oxides that share a common element (as the main component) other than oxygen. It is preferable that it has a layered structure.

[0198] Specifically, in the metal oxide used in oxide 230a or oxide 230d, In The atomic ratio of element M is used in the metal oxide used in oxide 230b or oxide 230c. It is preferable that the atomic ratio of element M to In is greater than that of element M. The larger the atomic ratio, the easier it becomes to suppress the diffusion of impurities or oxygen. Therefore, acid Having oxide 230a below oxide 230b, the oxide 230a is formed below the oxide 230a. The diffusion of impurities from the structure to oxide 230b can be suppressed. Having oxide 230d on material 230c, formed above oxide 230d This can suppress the diffusion of impurities from the structure to oxide 230c.

[0199] In other words, in the metal oxide used in oxide 230b or oxide 230c, element M The atomic ratio of In to the metal oxide used in oxide 230a or oxide 230d is In this case, it is preferable that the atomic ratio of In to element M is greater than that of the carrier. The main pathway is through oxide 230b, oxide 230c, or its vicinity, for example, oxide 23 This forms the interface between 0b and oxide 230c. Also, oxide 230b and oxide 230c are acid By having a common element other than the primary element (as the main component), oxide 230b and oxide 230c Because the defect level density at the interface can be reduced, carrier propagation by interface scattering can be reduced. It has minimal impact on conductivity and allows for high on-current.

[0200] Furthermore, in order to use oxide 230c as the main carrier pathway, in oxide 230c, The atomic ratio of indium to the constituent metal elements is the main component in oxide 230b. It is preferable that the atomic ratio of indium to the metal element is greater than that of indium. By using metal oxides with a high content in the channel formation region, the on-current of the transistor can be increased. It can be increased.

[0201] Furthermore, in order for oxide 230c to be the primary carrier pathway, the lower end of the conduction band of oxide 230c is The vacuum level is below the lower end of the conduction band of oxide 230a, oxide 230b, and oxide 230d. It is preferable that they be far apart. In other words, the electron affinity of oxide 230c is that of oxide 2 It is preferable that the electron affinity is greater than that of oxide 30a, oxide 230b, and oxide 230d.

[0202] It is preferable that oxides 230b and 230c each have crystalline properties. In particular, As oxides 230b and 230c, CAAC-OS(c-axis a ligated crystalline oxide semiconductor) It is preferable to use it. Furthermore, the oxide 230d may be configured to have crystalline properties.

[0203] By using CAAC-OS in oxide 230b and oxide 230c, in oxide semiconductors In the region where the channel is formed, impurities and oxygen vacancies can be reduced. This further suppresses fluctuations in electrical characteristics, resulting in stable electrical performance and improved reliability. We can provide a transistor that enables this.

[0204] Furthermore, the extraction of oxygen from oxide 230b by the source or drain electrode is suppressed. This can be controlled. As a result, even when heat treatment is performed, oxygen is extracted from oxide 230b. Because it can reduce the risk of failure, the 200A transistor is suitable for high temperatures (location) during the manufacturing process. It is stable against the so-called thermal budget.

[0205] Furthermore, CAAC-OS has the property of easily moving oxygen in the direction perpendicular to the c-axis of the CAAC structure. It possesses. Therefore, the oxygen contained in oxide 230c is efficiently supplied to oxide 230b. It is possible.

[0206] CAAC-OS has a highly crystalline, dense structure, and is free from impurities and defects (oxygen deficiencies). It is a metal oxide with few (sodium). In particular, after the formation of the metal oxide, the metal oxide becomes polycrystalline. By heat treatment at a temperature that is not too high (for example, between 400°C and 600°C), CAAC -OS can be made into a more crystalline, dense structure. In this way, CAAC -By increasing the density of the OS, the diffusion of impurities or oxygen in the CAAC-OS is It can be reduced.

[0207] Oxide 230 is located in the channel formation region of transistor 200A and in the area surrounding the channel formation region. It has a pair of low-resistance regions (source region and drain region) provided in such a way. The channel-forming region is superimposed on the conductor 260 in at least part of it. Conductors 242 (conductors 242a and 242b) are provided, forming a channel. A region with lower resistance than the main region is formed near the conductor 242.

[0208] The source and drain regions have low oxygen concentrations and contain impurities such as hydrogen, nitrogen, and metallic elements. This is a region where the carrier concentration increases due to factors such as inclusion, resulting in low resistance. In other words, the source region. The region and drain region have higher carrier concentrations and lower resistance compared to the channel-forming region. This is the region. Furthermore, the oxygen concentration in the channel-forming region is higher than in the source and drain regions. Due to factors such as high and low impurity concentrations, this region exhibits low carrier concentration and high resistance.

[0209] In oxide 230, it can be difficult to clearly detect the boundaries of each region. The concentrations of impurities such as hydrogen, nitrogen, and metallic elements detected within the sample change gradually from region to region. Furthermore, it may change continuously even within each region. In other words, the region close to the channel formation region. The lower the region, the lower the concentration of impurities such as hydrogen, nitrogen, and metallic elements should be.

[0210] Furthermore, to increase the oxygen concentration in the channel formation region, heating is required near the oxide semiconductor. By providing an insulator containing oxygen that is released (also called excess oxygen) and performing heat treatment, the insulation The solution is to create a configuration that allows oxygen to be supplied from the body to the oxide semiconductor. This allows oxygen to be supplied to the oxide semiconductor. The oxygen deficiency in the channel formation region can be repaired by the supplied oxygen. Furthermore, the supplied oxygen reacts with the hydrogen remaining in the oxide semiconductor, and the hydrogen This allows the volatile element to be removed as H2O (dehydrated). This allows V to be added to the oxide semiconductor. O This can suppress the formation of H.

[0211] However, if an excessive amount of oxygen is supplied to the source or drain region, The carrier concentration in the region or drain region is reduced, resulting in a lower on-current for transistor 200A. Furthermore, this may cause a decrease in field-effect mobility, etc. In addition, the source region or The oxygen supplied to the rain region varies within the substrate surface, resulting in a semiconductor containing transistors. This will result in variations in the characteristics of the devices.

[0212] Therefore, in oxide semiconductors, the carrier concentration is reduced in the channel formation region, resulting in type i. It is preferable that the source region and drain region are modified or substantially modified to type i, however, A high carrier concentration and n-type configuration are preferable. In other words, the channel of the oxide semiconductor. Oxygen is supplied to the formation region, while excess oxygen is not supplied to the source and drain regions. It is preferable to avoid this.

[0213] For example, by depositing an insulator 254 using a sputtering method, acid can be deposited on the insulator 224. An element can be injected. Then, the oxygen injected into the insulator 224 is delivered via the oxide 230c. This supplies oxide 230b. This allows oxide 2, which occupies most of the channel formation region, to be supplied. Selectively supplying oxygen to the region of oxide 230b that is in contact with oxide 230c of 30c and oxide 230b. It is possible.

[0214] Furthermore, CAAC-OS, which has the dense structure described above, is used as oxide 230b. This reduces the diffusion of impurities and oxygen in oxide 230b. Therefore, Oxygen supplied to the channel-forming region of oxide 230b is supplied to the source region of oxide 230b and This can reduce diffusion into the drain region.

[0215] As described above, oxygen is selectively supplied to the channel formation region, and the i of the channel formation region To achieve a specific shape and suppress the diffusion of oxygen into the source and drain regions, the source region and The n-type configuration of the drain region can be maintained. This allows the power of transistor 200A to be maintained. This suppresses variations in electrical characteristics and prevents variations in the electrical characteristics of the 200A transistor within the substrate surface. It is possible.

[0216] Furthermore, oxide 230d contains the metal elements that make up the metal oxide used in oxide 230c. It is preferable to include at least one, and more preferable to include all of the metal elements. For example, as oxide 230c, In-M-Zn oxide, In-Zn oxide, or indi Using ammonium oxide, as oxide 230d, In-M-Zn oxide, M-Zn oxide, Alternatively, an oxide of element M may be used. This will allow the properties of oxide 230c and oxide 230d to be met. The defect level density at the interface can be reduced.

[0217] Furthermore, oxide 230d suppresses the diffusion or permeation of oxygen more effectively than oxide 230c. It is preferable that it be an oxide. Oxide 230d is provided between the insulator 250 and oxide 230c. By doing so, oxygen contained in oxide 230c or insulator 280 diffuses into insulator 250. This can be suppressed. Therefore, the oxygen, via oxide 230c, acid It can be efficiently supplied to the compound 230b. Also, the conductor 26 can be supplied via the insulator 250. This can suppress the oxidation of 0.

[0218] Furthermore, in the metal oxide used in oxide 230d, the ratio of In to the main metal element is The atomic ratio of the metal oxide used in oxide 230c is relative to the main component metal element. By making the atomic ratio of In smaller than that, the diffusion of In towards the insulator 250 is suppressed. It is possible. Insulator 250 functions as a gate insulator, so In is insulator 25 If it is mixed in with 0, it will cause transistor characteristics to deteriorate. Therefore, oxide 230c and By providing oxide 230d between the insulator 250 and the semiconductor, a highly reliable semiconductor device is provided. This becomes possible.

[0219] Here, the bonding of oxides 230a, 230b, 230c, and 230d. In this region, the lower end of the conduction band changes smoothly. In other words, oxide 230a, oxide 2 The lower end of the conduction band at the junction of 30b, oxide 230c, and oxide 230d is continuously It can also be said that it changes or forms a continuous bond. In order to do this, oxide 2 The interface between 30a and oxide 230b, the interface between oxide 230b and oxide 230c, and oxidation By lowering the defect level density of the mixed layer formed at the interface between material 230c and oxide 230d, stomach.

[0220] For example, oxide 230a and oxide 230b, oxide 230b and oxide 230c, oxide 2 30c and oxide 230d share a common element other than oxygen as their main component, thus providing a defect level. A mixed layer with a low tide density can be formed. For example, oxide 230b can be In-M-Zn In the case of oxides, they are referred to as oxide 230a, oxide 230c, and oxide 230d, and are In-M -Zn oxide, M-Zn oxide, oxide of element M, In-Zn oxide, indium oxide It is recommended to use such as

[0221] Specifically, as oxide 230a, In:M:Zn = 1:3:4 [atomic ratio] or The composition in its vicinity, or In:M:Zn=1:1:0.5 [atomic ratio] or its vicinity. A metal oxide with the following composition can be used. Also, as oxide 230b, In:M:Zn=1 :1 [atomic ratio] or a composition close to that, or In:M:Zn=4:2:3 [atomic ratio] A metal oxide with a composition of [number of particles] or a similar composition should be used. Also, oxide 230c and Therefore, the composition is In:M:Zn=4:2:3 [atomic ratio] or close to that, In:M:Z n=5:1:3 [atomic ratio] or a composition close to that, or In:M:Zn=10:1 :3 [atomic ratio] or a metal oxide or indium oxide with a composition close to that. It's fine if it's there. Also, as oxide 230d, In:M:Zn=1:3:4 [atomic ratio] Or a composition in the vicinity of that, M:Zn=2:1 [atomic ratio] or a composition in the vicinity of that, Metal oxides with a composition of M:Zn=2:5 [atomic ratio] or close to it, or elements M Oxides can be used. Note that "nearby composition" includes a range of ±30% of the desired atomic ratio. Furthermore, it is preferable to use gallium as element M.

[0222] Oxide 230a, oxide 230b, oxide 230c, and oxide 230d are configured as described above. By doing so, the interface between oxide 230a and oxide 230b, and the interface between oxide 230b and oxide 230 The defect level density at the interface with c, and at the interface between oxide 230c and oxide 230d, is reduced. This makes it possible. Therefore, the influence of interfacial scattering on carrier conduction is reduced, and traction The 200A inverter can achieve high on-current and high frequency characteristics.

[0223] Furthermore, in a cross-sectional view of the transistor in the channel length direction, grooves are provided in the oxide 230b. It is preferable to embed the oxide 230c having CAAC-OS in the groove. Furthermore, the oxide 230c is arranged to cover the inner wall (side wall and bottom surface) of the groove.

[0224] Furthermore, the depth of the grooves in oxide 230b is equal to or approximately equal to the film thickness of oxide 230c. This is preferable. In other words, the upper surface of oxide 230c in the region overlapping with oxide 230b is It is preferable that the interface between oxide 230b and oxide 243 is coincided with or approximately coincided with. For example, when the bottom surface of insulator 222 is used as a reference, oxide 230b and oxide 243 The difference between the interface height and the interface height between oxide 230c and oxide 230d is the same for oxide 230c. It is preferable that the film thickness be less than or equal to half the film thickness of oxide 230c. It's nice.

[0225] By using the above configuration, in the transistor, V O Reduces the effects of defects such as H and other impurities. This allows the channel to be formed in oxide 230c. It can impart good electrical characteristics. Furthermore, it reduces the variation in transistor characteristics. This enables the provision of highly reliable semiconductor devices.

[0226] Furthermore, impurities at and near the interface between oxide 230b and oxide 230c are reduced. It is preferable that it be removed. In particular, if element M is not aluminum, Impurities such as silicon affect the crystallinity or c-axis alignment of oxides 230c and 230b. It is preferable that these substances be reduced or removed, as they hinder the improvement of directional properties. For example, oxides. The concentration of aluminum atoms at and near the interface between 230b and oxide 230c is 2 Preferably 0.0 atomic% or less, more preferably 1.5 atomic% or less, and even more preferably 1.0 atomic% or less. It is preferable.

[0227] Furthermore, impurities such as aluminum and silicon can hinder the improvement of crystallinity or c-axis orientation. Therefore, pseudo-amorphous oxide semiconductors (a-like OS: amorphous-like The region of the metal oxide (which has become an oxide semiconductor) is a non-CAAC region. It is sometimes called a region. In the non-CAAC region, V O A large amount of H is formed, and the transistor is no There is a high probability that it will become more prone to becoming marionized. Therefore, the non-CAAC region will be reduced or removed. It is preferable that this is done.

[0228] In contrast, in oxides 230b and 230c having a CAAC structure, Because a dense crystal structure is formed, V O H becomes less likely to exist stably. Furthermore, as will be discussed later... In the oxygenation treatment, excess oxygen is supplied to oxide 230b and oxide 230c. Therefore, V in oxide 230b and oxide 230c O H and V O This can reduce [the problem]. As shown above, oxides 230b and 230c have a CAAC structure, This can suppress the normalization of sta.

[0229] Furthermore, as shown in Figure 10(C), in a cross-sectional view of transistor 200A in the channel width direction... Furthermore, a curved surface may be present between the side surface of oxide 230b and the top surface of oxide 230b. In other words, the edges of the side surface and the edges of the top surface may be curved.

[0230] The radius of curvature of the curved surface is greater than 0 nm, and the oxide 23 in the region overlapping with the conductor 242. A region of the upper surface of oxide 230b that is smaller than the film thickness of 0b, or a region that does not have the curved surface. It is preferable that it be less than half the length. Specifically, the radius of curvature of the curved surface is 0 nm. Larger than 20 nm, preferably 1 nm to 15 nm, and even more preferably 2 nm The above is 10 nm or less. By making it this shape, the insulator 25 formed in a later process The coating properties of 0 and the conductor 260 on the groove can be improved. Also, oxide 230 This prevents a reduction in the length of the region on the upper surface of b that does not have the curved surface, and the O This can suppress the decrease in current and mobility. Therefore, it has good electrical characteristics. A conductive device can be provided.

[0231] Note that oxide 230c may be provided for each transistor 200A. Two adjacent to each other The oxide 230c present in each transistor 200A does not need to be in contact with each other. By placing oxide 230c for every 200A transistor, the gap between the two transistors This suppresses the formation of raw transistors and prevents the formation of leakage paths along the conductor 260. Therefore, it is possible to have good electrical properties and miniaturize or highly integrate it. We can provide a suitable semiconductor device.

[0232] Furthermore, the conductor 260 and the insulator 250 are shared between adjacent transistors 200A. It may be used throughout. In other words, the conductor 260 of transistor 200A is the same as the transistor A region provided in continuous with the conductor 260 of transistor 200A adjacent to zista 200A It has a region. Also, the insulator 250 of transistor 200A is the same as transistor 200A It has a region that is continuous with the insulator 250 of the adjacent transistor 200A.

[0233] Furthermore, with the above configuration, the oxide 230d is connected to the transistor 200A and the transistor Between transistor 200A and adjacent transistor 200A, the region in contact with the insulator 224 is It possesses. Furthermore, the oxide 230d of transistor 200A is present in the transistor 200A. The oxide 230d of the adjacent transistor 200A may be configured to be separated. The insulator 250 is connected to transistor 200A and to the transistor adjacent to transistor 200A. There is a region between the transistor 200A and the insulator 224 that is in contact with it.

[0234] Insulator 212, insulator 214, insulator 254, insulator 282, insulator 283, and insulator 286 is a case where impurities such as water and hydrogen enter from the substrate side or from above transistor 200A. It is preferable that it functions as a barrier insulating film that suppresses diffusion from to transistor 200A. Therefore, insulator 212, insulator 214, insulator 254, insulator 282, insulator Body 283 and insulator 286 contain hydrogen atoms, hydrogen molecules, water molecules, nitrogen atoms, nitrogen molecules, and acids. It has the function of suppressing the diffusion of impurities such as nitrogen molecules (N2O, NO, NO2, etc.) and copper atoms. It is preferable to use an insulating material that contains (and is less permeable to the above-mentioned impurities). Alternatively, oxygen (For example, it has the function of suppressing the diffusion of at least one such as an oxygen atom or oxygen molecule.) It is preferable to use an insulating material (that is not easily permeable to oxygen).

[0235] In this specification, a barrier insulating film refers to an insulating film that has barrier properties. In the specification, barrier properties refer to the function of suppressing the diffusion of the corresponding substance (also known as low permeability). (To say) Or, a mechanism that captures and fixes the corresponding substance (also called gettering). It is possible.

[0236] For example, silicon nitride or the like may be used as insulator 212 and insulator 283, and insulator 214 It is preferable to use aluminum oxide or the like as insulator 254 and insulator 282. i. As a result, impurities such as water and hydrogen enter the substrate via insulators 212 and 214. This can suppress diffusion from the side to the transistor 200A side. Also, the insulator 22 Oxygen contained in 4, etc., diffuses to the substrate side via insulators 212 and 214. This can suppress impurities such as water and hydrogen. and insulators 212, 214, 254, and an insulator having the function of suppressing the diffusion of oxygen. It is preferable to have a structure that surrounds the edge body 282 and the insulator 283.

[0237] Furthermore, it is preferable to lower the resistivity of insulators 212, 283, and 286. There are cases where this is not the case. For example, the resistivity of insulators 212, 283, and 286 is 1 × 10 13 By setting it to approximately Ωcm, in processes using plasma, etc., in semiconductor manufacturing processes And insulators 212, 283, and 286 are connected to conductors 205 and 242, It may be possible to mitigate the charge-up of conductor 260 or conductor 246. The resistivity of insulators 212, 283, and 286 is preferably 1 × 10⁻⁶. 1 0 Ωcm or more, 1 × 10 15 The density should be less than or equal to Ωcm.

[0238] It is preferable that insulators 216 and 280 have a lower dielectric constant than insulator 214. By using a low-power material as the interlayer film, parasitic capacitance between wiring can be reduced. For example, as insulators 216 and 280, silicon oxide, silicon oxynitride, and nitrile Silicon oxide, silicon nitride, silicon oxide with added fluorine, silicon oxide with added carbon Silicon oxide with added carbon and nitrogen, porous silicon oxide, etc., can be used as appropriate. It is fine as long as it is there. In particular, silicon oxide and silicon oxide nitride are preferred because they are thermally stable. In particular, materials such as silicon oxide, silicon oxide-nitride, and silicon oxide with vacancies are This is preferable because it allows for the easy formation of regions containing oxygen that is released by heating.

[0239] Conductor 205 may function as a second gate electrode. In that case, conductor 205 The potential applied to the conductor 260 is changed independently, without being linked to the potential applied to the conductor 260. This allows us to control the threshold voltage (Vth) of transistor 200A. In particular, By applying a negative potential to the electromagnet 205, the Vth of transistor 200A can be increased. Therefore, it becomes possible to reduce the off-current. Thus, a negative potential is applied to the conductor 205. When applied, the voltage applied to the conductor 260 is greater than when not applied. The inductive current can be reduced.

[0240] The conductor 205 is positioned so as to overlap with the oxide 230 and the conductor 260.

[0241] Furthermore, as shown in Figure 10(A), the conductor 205 is made of the conductor 242a of oxide 230 and It is preferable to provide a region larger than the area that does not overlap with the conductor 242b. In particular, Figure 10( As shown in C), the conductor 205 has a channel width of oxide 230a and oxide 230b It is preferable that the region extends even in the area outside the end where it intersects with the direction. On the outer side of the side surface of the material 230 in the channel width direction, there is a conductor 205 and a conductor 26 0 is preferably superimposed via an insulator. Having this configuration, the first The electric field of the conductor 260 which functions as a gate electrode, and the conductor which functions as a second gate electrode The electric field of body 205 electrically surrounds the channel formation region of oxide 230. In this specification, channel formation is achieved by the electric fields of the first gate and the second gate. The structure of a transistor that electrically surrounds a region is called a surrounded channel. This is called an (S-channel) structure.

[0242] In this specification, etc., an S-channel transistor refers to a pair of gates. A transistor electrically surrounds a channel formation region with the electric fields of one electrode and the other electrode. This represents the structure. Furthermore, the S-channel structure disclosed herein is a Fin-type structure and It differs from the planar structure. By adopting an S-channel structure, short channel efficiency is achieved. To increase resistance to effects, in other words, to create a transistor that is less susceptible to short-channel effects. It is possible.

[0243] Furthermore, as shown in Figure 10(C), the conductor 205 is extended and also functions as wiring. However, it is not limited to this, and a conductive material that functions as wiring is located beneath the conductor 205. A configuration with a body may also be used. Also, the conductor 205 does not necessarily have to be one per transistor. It is not necessary to provide one. For example, by configuring the conductor 205 to be shared by multiple transistors. That's good too.

[0244] Here, the conductor 205a consists of hydrogen atoms, hydrogen molecules, water molecules, nitrogen atoms, nitrogen molecules, and nitrogen oxides. It has the function of suppressing the diffusion of impurities such as elementary molecules (N2O, NO, NO2, etc.) and copper atoms. It is preferable to use a conductive material. Alternatively, oxygen (e.g., oxygen atoms, oxygen molecules, etc.) It is preferable to use a conductive material that has the function of suppressing the diffusion of at least one of the substances.

[0245] By using a conductive material that has the function of suppressing oxygen diffusion in the conductor 205a, This can suppress the oxidation of the conductor 205b, which reduces its conductivity. Examples of conductive materials that have a suppressive function include tantalum, tantalum nitride, and ruthenium. It is preferable to use materials such as ruthenium oxide. Therefore, the conductor 205a is the above The conductive material can be in a single layer or a multilayer structure. For example, the conductor 205a may be tantalum, nitride A laminate of tantalum, ruthenium, or ruthenium oxide with titanium or titanium nitride. That's fine.

[0246] Furthermore, the conductor 205b is a conductive material mainly composed of tungsten, copper, or aluminum. It is preferable to use the material. Although the conductor 205b is shown as a single layer, it can be in a laminated structure. For example, a laminate of titanium or titanium nitride with the conductive material may be used.

[0247] In transistor 200A, the conductor 205 consists of conductor 205a and conductor 205b. The diagram shows a configuration in which layers are stacked, but the conductor 205 can be in a single-layer or stacked structure. It's okay to have it.

[0248] The insulator 222 suppresses the diffusion of hydrogen (for example, at least one such as a hydrogen atom or hydrogen molecule). It is preferable that the insulator 222 has the function of having oxygen (for example, oxygen atoms, acid It is preferable that it has the function of suppressing the diffusion of at least one of elementary molecules. For example, The edge material 222 can suppress the diffusion of hydrogen and / or oxygen more effectively than the insulator 224. It is preferable to do so.

[0249] The insulator 222 is an oxide of one or both of the insulating materials aluminum and hafnium. It is preferable to use an insulator containing a substance. This could be an oxide of either aluminum or hafnium, or both. An insulator containing has barrier properties against oxygen, hydrogen, and water. Aluminum oxide, hafnium oxide, aluminum and hafnium oxide (hafnium It is preferable to use materials such as aluminum oxide. When formed, the insulator 222 prevents the release of oxygen from the oxide 230 to the substrate side, and the transient It functions as a layer that suppresses the diffusion of impurities such as hydrogen from the peripheral area of ​​T200A to oxide 230. Therefore, by providing the insulator 222, impurities such as hydrogen are prevented from entering the transistor 200A. This suppresses diffusion into the interior and inhibits the formation of oxygen vacancies in oxide 230. Furthermore, the conductor 205 reacts with the oxygen present in the insulator 224 and oxide 230. It can be suppressed.

[0250] Alternatively, the above insulator may contain, for example, aluminum oxide, bismuth oxide, germanium oxide, Niobium oxide, silicon oxide, titanium oxide, tungsten oxide, yttrium oxide, dioxide Alconium may be added. Alternatively, these insulators may be nitrided. The edge body 222 contains silicon oxide, silicon oxide-nitride, or silicon nitride in these insulators. They may be used in stacked form.

[0251] Furthermore, the insulator 222 may be, for example, aluminum oxide, hafnium oxide, tantalum oxide, acid Zirconium oxide, lead zirconate titanate (PZT), strontium titanate (SrTi Insulated materials containing O3, (Ba,Sr)TiO3 (BST), etc. (so-called high-k materials) The edge material may be used in a single layer or in a stacked form. As transistors become smaller and more integrated, Thinning the gate insulator can sometimes lead to problems such as leakage current. By using a high-k material as an insulator that functions in this way, the physical film thickness is maintained while transforming This allows for a reduction in gate potential during DISTRO operation.

[0252] It is preferable that the insulator 224 in contact with the oxide 230 deoxygenates oxygen by heating. For the insulator 224, silicon oxide, silicon oxide nitride, etc. can be used as appropriate. By providing the insulating material in contact with the oxide 230, oxygen deficiency in the oxide 230 is reduced. This can improve the reliability of the 200A transistor.

[0253] Specifically, as insulator 224, the region in which oxygen is present in excess of the stoichiometric composition ( It is preferable to use an insulating material that contains excess oxygen (also known as the excess oxygen region) or excess oxygen. An excess oxygen region or oxide film containing excess oxygen refers to a TDS (Thermal Desiccant) film. In spectroscopy analysis, the amount of oxygen molecules removed was 1.0 × 10⁻⁶. 1 8 molecular / cm² 3 Preferably 1.0 × 10 19 Molecular / cm 3 More preferably 2.0 × 10 19 molecular / cm² 3 That's all for now. is 3.0×10 20 molecular / cm² 3 The above describes the oxide film. The surface temperature of the film during DS analysis is between 100°C and 700°C, or between 100°C and 40°C. A temperature range of 0°C or lower is preferred.

[0254] Furthermore, the insulator having the above excess oxygen region and the oxide 230 are brought into contact and heat treated, microphone One or more of the following processes may be performed: low-wave processing or RF processing. This allows for the removal of water or hydrogen from oxide 230. These may be diffused or captured (also known as gettering) by the conductor 242.

[0255] The above microwave processing is, for example, an apparatus having a power supply that generates a high-density plasma, or It is preferable to use a device that has a power supply that applies RF to the substrate side. For example, a device containing oxygen By using gas and high-density plasma, high-density oxygen radicals can be generated. This can be achieved by applying RF to the substrate side, and by applying RF to the substrate side, oxygen radio waves generated by the high-density plasma can be produced. It is possible to efficiently introduce CAL into oxide 230 or the insulator near oxide 230. Furthermore, the above microwave treatment is performed at a pressure of 133 Pa or higher, preferably 200 Pa or higher. Furthermore, it is preferable to have a pressure of 400 Pa or higher. Also, within the apparatus that performs microwave processing For example, oxygen and argon are used as the gases to be introduced, with an oxygen flow rate ratio of (O2 / (O2+ Microwave processing should be performed when the Ar) is 50% or less, preferably 10% to 30%. .

[0256] Furthermore, by performing an oxygenation treatment on oxide 230, the oxygen deficiencies in oxide 230 are supplied. The reaction that repairs the damage can be accelerated by the oxygen that remains in the oxide 230. The oxygen supplied reacts with the existing hydrogen, removing it as H2O (dehydration). This allows the hydrogen remaining in the oxide 230 to be converted into oxygen. Combine and V OThis can suppress the formation of H.

[0257] Even if each of the insulators 222 and 224 has a laminated structure of two or more layers, That's good. In that case, it's not limited to laminated structures made of the same material, but also laminated structures made of different materials. But that's fine.

[0258] It is preferable that oxide 243 has the function of suppressing oxygen permeation. Source electrode and drain A mechanism that suppresses oxygen permeation between the conductor 242, which functions as the in electrode, and the oxide 230b. By arranging the conductive oxide 243, the electrical current between the conductive 242 and the oxide 230b is maintained. This is preferable because it reduces air resistance. With this configuration, transistor 200A The electrical characteristics and reliability of the transistor 200A can be improved. If the electrical resistance between 242 and oxide 230b can be sufficiently reduced, oxide 243 is not provided. It can also be used as a composition.

[0259] As oxide 243, a metal oxide containing element M may be used. In particular, element M is aluminum Tin, gallium, yttrium, or tin may be used. Oxide 243 is an oxide. It is preferable that the concentration of element M is higher than that of 230b. Also, as oxide 243, gal oxide Rium may be used. Also, as oxide 243, metal oxides such as In-M-Zn oxide may be used. You may use a substance. Specifically, in the metal oxide used in oxide 243, with respect to In The atomic ratio of element M in the metal oxide used in oxide 230b is the ratio of element M to In. It is preferable that the atomic ratio of M is greater than that of M. Also, the film thickness of oxide 243 is 0.5 nm or more. Preferably 5 nm or less, more preferably 1 nm to 3 nm, and even more preferably 1 nm The above is 2 nm or less. Furthermore, it is preferable that oxide 243 has crystalline properties. Oxide 24 If 3 is crystalline, the release of oxygen from the oxide 230 can be effectively suppressed. For example, if oxide 243 has a crystalline structure such as hexagonal, the release of oxygen in oxide 230 In some cases, it may be possible to suppress the discharge.

[0260] Examples of conductor 242 include tantalum-containing nitrides, titanium-containing nitrides, and molybdenum Nitrides containing tungsten, nitrides containing tantalum and aluminum, It is preferable to use nitrides containing tung and aluminum. Nitrides containing tantalum are particularly preferred. Also, for example, ruthenium oxide, ruthenium nitride Oxides containing lum, strontium and ruthenium, oxides containing lanthanum and nickel, etc. These materials may be conductive materials that are resistant to oxidation, or materials that absorb oxygen. It is preferable because it is a material that maintains conductivity.

[0261] There may be a curved surface between the side surface of the conductor 242 and the top surface of the conductor 242. The edges of the sides and top surface may be curved. The curved surface is, for example, the conductor 24 At the end of 2, the radius of curvature is 3 nm to 10 nm, preferably 5 nm to 6 nm. The length should be less than or equal to m. The absence of corners at the ends improves the film coverage in subsequent film formation processes. ru.

[0262] If oxide 243 is not provided, the conductor 242 and oxide 230b or oxide 23 When it comes into contact with 0c, oxygen in oxide 230b or oxide 230c is transferred to the conductor 242. Diffusion can occur, and conductor 242 may oxidize. When conductor 242 oxidizes, conductor 2 There is a high probability that the conductivity of 42 will decrease. The diffusion of oxygen into the conductor 242 is due to the conductor 242 being oxide 230b or oxide 23 This can be rephrased as "absorbing oxygen in 0°C."

[0263] Furthermore, oxygen in oxide 230b or oxide 230c is present in conductors 242a and conductor 242 By diffusing into b, the conductor 242a and oxide 230b, and the conductor 242b Between oxide 230b, or between conductor 242a and oxide 230c, and conductor A layer may be formed between 242b and the oxide 230c. This layer is conductor 242 Since it contains more oxygen than a or conductor 242b, it is presumed that this layer has insulating properties. At this time, the conductor 242a or conductor 242b, the layer, and the oxide 230b The three-layer structure with oxide 230c is considered to be a three-layer structure consisting of metal-insulator-semiconductor. This is possible, and the MIS (Metal-Insulator-Semiconductor) structure Alternatively, it can be seen as a diode junction structure primarily composed of an MIS structure.

[0264] Furthermore, hydrogen contained in oxide 230b, oxide 230c, etc., is conductor 242a or conductor It may diffuse into the conductive material 242b. In particular, tan may diffuse into the conductive material 242a and conductive material 242b. By using nitrides containing tal, hydrogen contained in oxide 230b, oxide 230c, etc. It readily diffuses into conductor 242a or conductor 242b, and the diffused hydrogen then moves to conductor 24 It may combine with nitrogen present in 2a or conductor 242b, i.e., oxide 230b Hydrogen contained in oxide 230c, etc., is absorbed by conductor 242a or conductor 242b. It may be possible.

[0265] The insulator 254 has sides of oxide 230a, sides of oxide 230b, sides of oxide 243, It is provided to cover the sides and the top surface of the conductor 242.

[0266] The insulator 254 preferably has the function of suppressing the diffusion of oxygen. For example, insulator 2 It is preferable that material 54 can suppress oxygen diffusion more effectively than insulator 280. Insulator 254 For example, an insulator containing an oxide of either or both aluminum and hafnium It is best to form a thin film.

[0267] Furthermore, the insulator 254 is oxidized in an oxygen-containing atmosphere by bias sputtering. It is preferable to deposit an aluminum or hafnium oxide film. Bias sputtering The sputtering method is a method of sputtering while applying RF power to the substrate. By applying force, the potential of the substrate becomes negative relative to the plasma potential (bias potential). The positive ions in the plasma are accelerated by this bias potential and injected into the substrate. The potential can be controlled by the magnitude of the RF power applied to the substrate. Therefore, By the ASS sputtering method, aluminum oxide or hydroxyaluminum oxide is produced in an oxygen-containing atmosphere. By depositing a funium film, oxygen can be injected into the insulator 224.

[0268] In the bias sputtering method, the amount of RF power applied to the substrate affects insulation. The amount of oxygen injected into the insulator 224 that forms the base of the body 254 can be controlled. , as RF power, 0.31 W / cm² 2 Preferably, the above is 0.62 W / cm². 2 That's all, Preferably 1.86 W / cm² 2 The above bias should be applied to the substrate. In other words, insulation The amount of oxygen suitable for the transistor's characteristics is changed by the RF power used when depositing body 254. It can be injected in an amount suitable for improving the reliability of transistors. This is possible. Furthermore, the RF frequency is preferably 10MHz or higher. Typically, 13. It is 56MHz. The higher the RF frequency, the less damage can be inflicted on the substrate. Therefore, by adjusting the RF power applied to the substrate, it can be injected into the insulator 224. Since the amount of oxygen can be controlled, the amount of oxygen injected into the insulator 224 can be optimized.

[0269] Furthermore, in bias sputtering, the bias applied to the substrate is not limited to RF power. It is not necessary; DC voltage is also acceptable.

[0270] As described above, in the process of forming the insulator 254, oxygen is injected into the underlying film, The insulator 254 itself has the function of suppressing oxygen permeation. Therefore, in a later process, the insulator 2 When an insulator 280 is formed on 54 and oxygen is diffused from the insulator 280, the insulator 28 From 0, oxygen is present in oxides 230a, 230b, 243, and 242. It can prevent direct spread.

[0271] By providing the insulator 254 as described above, oxide 230a, oxide 230b, oxide 2 43 and the conductor 242 can be separated from the insulator 280. Therefore, oxide 2 Oxygen from insulator 280 is absorbed into 30a, oxide 230b, oxide 243, and conductor 242. Direct diffusion can be suppressed. This allows the source region and the dot of oxide 230 to be controlled. Excess oxygen is supplied to the rain region, resulting in low carrier concentrations in the source and drain regions. This prevents a decrease. Also, if the conductor 242 is excessively oxidized, the resistivity will increase. This can suppress the reduction in on-current.

[0272] It is preferable that the insulator 250 is placed in contact with at least a portion of the oxide 230d. As the edge material 250, silicon oxide, silicon oxide nitride, silicon oxide nitride, silicon nitride fluorine-added silicon oxide, carbon-added silicon oxide, carbon and nitrogen-added silicon oxide Silicon oxide, porous silicon oxide, etc. can be used. In particular, silicon oxide Cone and silicon oxide-nitride are preferred because they are stable to heat.

[0273] Insulator 250, like insulator 224, is shaped using an insulator that releases oxygen when heated. It is preferable to make this. An insulator that releases oxygen upon heating is used as insulator 250, and acid By providing it in contact with at least a portion of the oxide 230d, channel formation of the oxide 230 is achieved. This effectively supplies oxygen to the region and reduces oxygen deficiency in the channel formation region of oxide 230. This is possible. Therefore, fluctuations in electrical characteristics are suppressed, and stable electrical characteristics are achieved. Furthermore, it is possible to provide transistors with improved reliability. Also, the insulator 224 and Similarly, it is preferable that the concentration of impurities such as water and hydrogen in the insulator 250 is reduced. The thickness of the insulator 250 is preferably between 1 nm and 20 nm.

[0274] Note that in Figures 10(B) and 10(C), the insulator 250 is shown as a single layer, but it can also be two or more layers. A laminated structure may also be used. When the insulator 250 is made into a two-layer laminated structure, the bottom of the insulator 250 The layer is formed using an insulator that releases oxygen upon heating, and the upper layer of the insulator 250 is oxygen It is preferable to form it using an insulator that has the function of suppressing diffusion. This suppresses the diffusion of oxygen contained in the lower layer of the insulator 250 into the conductor 260. This means that the decrease in the amount of oxygen supplied to oxide 230 can be suppressed. Furthermore, it suppresses the oxidation of the conductor 260 by oxygen contained in the lower layer of the insulator 250. This is possible. For example, the lower layer of the insulator 250 can be used in the insulator 250 described above. The material is used to provide the upper layer of the insulator 250, and the upper layer of the insulator 250 is provided using the same material as the insulator 222. It is possible.

[0275] Furthermore, when silicon oxide or silicon oxide nitride is used as the lower layer of the insulator 250, The upper layer of 250 may be made of an insulating material, such as a high-k material with a high dielectric constant. The thermal insulator is constructed with a laminated structure consisting of a lower layer of insulator 250 and an upper layer of insulator 250. A stable and highly dielectric laminated structure can be created. Therefore, gate insulation It is possible to reduce the gate potential applied during transistor operation while maintaining the physical thickness of the edge material. This enables thinning of the equivalent oxide film thickness (EOT) of the insulator that functions as a gate insulator. This becomes possible.

[0276] Specifically, the upper layer of insulator 250 is made of hafnium, aluminum, gallium, and yt. Titanium, zirconium, tungsten, titanium, tantalum, nickel, germanium, Metal oxides or oxidation products containing one or more selected metals, such as magnesium. A metal oxide that can be used as material 230 can be used. In particular, aluminum It is preferable to use an insulator containing an oxide of either or both of um and hafnium.

[0277] By making the insulator 250 a two-layer laminated structure, the physical thickness of the insulator 250 allows for conductivity. The distance between body 260 and oxide 230 is maintained, between conductor 260 and oxide 230 Leakage current can be suppressed. Also, the physical relationship between the conductor 260 and the oxide 230 The distance and the electric field strength applied from the conductor 260 to the oxide 230 can be easily and appropriately adjusted. It is possible.

[0278] Furthermore, a metal oxide may be provided between the insulator 250 and the conductor 260. It is preferable to suppress the diffusion of oxygen from the insulator 250 to the conductor 260. By providing a metal oxide that suppresses diffusion, the diffusion of oxygen from the insulator 250 to the conductor 260 is suppressed. This is suppressed. In other words, the decrease in the amount of oxygen supplied to oxide 230 can be suppressed. Furthermore, the oxidation of the conductor 260 by oxygen in the insulator 250 can be suppressed.

[0279] Furthermore, it is preferable that the above-mentioned metal oxide functions as part of the first gate electrode. By having the above-mentioned metal oxide, the influence of the electric field from the conductor 260 is not weakened. The on-current of the 200A transistor can be improved. For example, as oxide 230 Any metal oxide that can be used can be used as the above-mentioned metal oxide. By depositing the conductive 260a using the sputtering method, the electrical resistance of the above metal oxide is reduced. It can be made conductive by reducing its conductivity. This is called OC (Oxide Conductor). They can be called electrodes.

[0280] The conductor 260 consists of a conductor 260a and a conductor 260b placed on top of the conductor 260a. It is preferable that the conductor 260a has the bottom surface and side surface of the conductor 260b. It is preferable to arrange them so as to enclose them. Also, as shown in Figures 10(B) and 10(C) The upper surface of the conductor 260 is the upper surface of the insulator 250, the upper surface of the oxide 230d, and the oxide It is positioned approximately in line with the top surface of 230c. Note that in Figures 10(B) and 10(C), Although the conductive body 260 is shown as a two-layer structure of conductive material 260a and conductive material 260b, a single-layer structure is also shown. It can be a simple structure, or a laminated structure of three or more layers.

[0281] Conductor 260a, like conductor 205a, has the function of suppressing the diffusion of impurities. It is preferable to use a conductive material. Alternatively, a conductive material that has the function of suppressing oxygen diffusion. It is preferable to use [this].

[0282] Furthermore, because the conductor 260a has the function of suppressing oxygen diffusion, the insulator 250 contains The presence of oxygen can suppress the oxidation of the conductor 260b, which would otherwise reduce its conductivity. It is possible. Conductive materials that have the function of suppressing oxygen diffusion include, for example, tantalum, nitride. It is preferable to use tantalum, ruthenium, ruthenium oxide, etc.

[0283] Furthermore, since the conductor 260 also functions as wiring, it is possible to use a conductor with high conductivity. Preferably, the conductor 260b is mainly composed of tungsten, copper, or aluminum. A conductive material can be used. Furthermore, the conductor 260b can also be in a laminated structure. For example, a laminated structure of titanium or titanium nitride and the above-mentioned conductive material may be used.

[0284] Furthermore, in transistor 200A, the conductor 260 is formed on the insulator 280, etc. The conductor 260 is formed in a self-aligning manner to fill the opening. Therefore, the conductor 260 is positioned in the region between the conductor 242a and the conductor 242b. It can be positioned reliably without any problems.

[0285] Furthermore, as shown in Figure 10(C), in the channel width direction of transistor 200A, The bottom surface of the region of the electrolytic body 260 that does not overlap with the oxide 230b is lower than the bottom surface of the oxide 230b. It is preferable that the conductor 260, which functions as a gate electrode, is connected via an insulator 250 or the like. By configuring the structure to cover the side and top surfaces of the channel-forming region of oxide 230b, the conductor This makes it easier to apply the 260 electric field to the entire channel-forming region of oxide 230b. Therefore, The on-current of the 200A transistor can be increased, improving its frequency characteristics. When the bottom surface of the edge body 222 is used as a reference, the oxides 230a and 230b and the conductor 26 The height of the bottom surface of the conductor 260 and the bottom surface of the oxide 230b in the region where 0 and do not overlap. The difference between the height and the depth is 0 nm to 100 nm, preferably 3 nm to 50 nm. Preferably, the wavelength is between 5 nm and 20 nm.

[0286] The insulator 280 is provided on the insulator 254. The upper surface of the insulator 280 is flattened. It's okay if it's not allowed.

[0287] Furthermore, it is preferable that the concentration of impurities such as water and hydrogen in the insulator 280 is reduced. Furthermore, it is preferable that the insulator 280 has a low hydrogen concentration and is in the excess oxygen region or has excess oxygen. For example, it may be provided using the same material as the insulator 216. Also, the insulator 280 is The above materials may also be layered structures, for example, silica oxide film deposited by sputtering. And on top of that, chemical vapor deposition (CVD) A laminated structure with silicon oxidnitride film deposited by the tion method can be used. Silicon nitride may be layered.

[0288] The conductor 240 uses a conductive material mainly composed of tungsten, copper, or aluminum. It is preferable that the conductor 240 is in a laminated structure. In this case, the conductive material in contact with insulators 283, 282, 280, and 254 The body uses conductive materials that have the function of suppressing the permeation of impurities such as water and hydrogen. Preferred. For example, tantalum, tantalum nitride, titanium, titanium nitride, ruthenium oxide It is preferable to use thenium or similar material. Furthermore, a device that suppresses the permeation of impurities such as water and hydrogen is also used. The conductive material having the property may be used in a single layer or a laminate. Also, the layer above the insulator 283 Impurities such as water and hydrogen contained in the material form oxides through conductors 240a and 240b. This can prevent contamination of 230.

[0289] Examples of insulators 241a and 241b include silicon nitride and aluminum oxide. An insulator such as silicon nitride can be used. Insulators 241a and 241b are Since it is provided in contact with the insulator 254, it absorbs water, hydrogen, and other substances contained in the insulator 280, etc. The mixing of pure substances into the oxide 230 through the conductors 240a and 240b is suppressed. This is possible. In particular, silicon nitride is preferred because it has high blocking properties for hydrogen. Furthermore, the oxygen contained in the insulator 280 is absorbed by the conductors 240a and 240b. This can prevent that from happening.

[0290] Furthermore, conductive materials function as wiring in contact with the upper surfaces of conductor 240a and conductor 240b. Body 246 (conductor 246a and conductor 246b) may be arranged. Conductor 246 is It is preferable to use a conductive material whose main components are sten, copper, or aluminum. Furthermore, the conductor may also have a laminated structure, for example, titanium or titanium nitride and on The conductive material may be laminated with the insulator. The conductor is provided in the openings of the insulator. It may be formed in a way that allows it to be embedded.

[0291] The insulator 286 is provided on the conductor 246 and the insulator 283. This allows the conductor The top and sides of 246 are in contact with the insulator 286, and the bottom surface of the conductor 246 is in contact with the insulator 283. They are in contact. In other words, the conductor 246 is configured to be surrounded by the insulator 283 and the insulator 286. This configuration allows for the suppression of oxygen permeation from the outside, and the conductor 24 This prevents oxidation of 6. Also, impurities such as water and hydrogen are removed from the conductor 246. This is preferable because it prevents the spread of the substance to other parts of the body.

[0292] Examples of substrates for forming transistor 200A include insulating substrates, semiconductor substrates, and A conductive substrate can be used. Examples of insulating substrates include glass substrates and quartz substrates. Plates, sapphire substrates, stabilized zirconia substrates (such as yttria-stabilized zirconia substrates), Examples include resin substrates. Semiconductor substrates include, for example, silicon and germanium. Semiconductor substrates made from materials such as silicon carbide, silicon germanium, gallium arsenide, and phosphorus. Examples include compound semiconductor substrates composed of indium oxide, zinc oxide, and gallium oxide. Furthermore, The aforementioned semiconductor substrate has an insulating region inside, for example, an SOI substrate. Examples of conductive substrates include graphite substrates, metal substrates, alloy substrates, and conductive resin substrates. Alternatively, there are substrates containing metallic nitrides, substrates containing metallic oxides, and so on. Furthermore, A substrate in which a conductor or semiconductor is provided on an insulating substrate, a semiconductor substrate in which a conductor or insulator Examples include substrates with a semiconductor or insulator attached, conductive substrates, etc. These substrates may also be used in which elements are provided on them. The elements provided on the substrate are These include capacitive elements, resistive elements, switching elements, light-emitting elements, and memory elements.

[0293] The insulators that make up the semiconductor device include insulating oxides, nitrides, and oxidized nitrides. Examples include nitride oxides, metal oxides, metal oxide nitrides, and metal nitride oxides.

[0294] For example, as transistors become smaller and more integrated, the gate insulator becomes thinner, Problems such as high current may occur. The insulator that functions as a gate insulator has high current. By using HK material, it is possible to lower the voltage during transistor operation while maintaining the physical film thickness. This is the result. On the other hand, for the insulator that functions as an interlayer film, by using a material with a low dielectric constant, Parasitic capacitance between wires can be reduced. Therefore, depending on the function of the insulator, It's a good idea to choose the materials carefully.

[0295] Furthermore, insulators with high dielectric constants include gallium oxide, hafnium oxide, and zirconium oxide. Aluminium, an oxide having aluminum and hafnium, an oxide having aluminum and hafnium Oxiditrides, oxides having silicon and hafnium, silicon and hafnium Examples include oxide nitrides, or nitrides containing silicon and hafnium.

[0296] Furthermore, insulators with low dielectric constants include silicon oxide, silicon oxide nitride, and silicon oxide nitride. Cone, silicon nitride, silicon oxide with added fluorine, silicon oxide with added carbon, carbon Examples include silicon oxide with added elements and nitrogen, silicon oxide with voids, or resins. .

[0297] Furthermore, transistors using metal oxides suppress the permeation of impurities such as hydrogen and oxygen. By surrounding it with a functional insulator, the electrical characteristics of the transistor can be stabilized. It can. Examples of insulators that have the function of suppressing the permeation of impurities such as hydrogen and oxygen include, for example, Boron, carbon, nitrogen, oxygen, fluorine, magnesium, aluminum, silicon, phosphorus, Chlorine, argon, gallium, germanium, yttrium, zirconium, lanthanum, ne An insulator containing odymium, hafnium, or tantalum can be used in a single layer or multilayer configuration. Specifically, as an insulator that has the function of suppressing the permeation of impurities such as hydrogen and oxygen. Aluminum oxide, magnesium oxide, gallium oxide, germanium oxide, yt oxide Zirconium oxide, lanthanum oxide, neodymium oxide, hafnium oxide, tantalum oxide Metal oxides such as aluminum nitride, silicon nitride, and other metal nitriles such as silicon nitride. Monsters can be used.

[0298] Furthermore, the insulator that functions as a gate insulator has a region containing oxygen that is released by heating. It is preferable that the insulator is such that it has an acid region containing oxygen that is desorbed by heating. By creating a structure in which silicon oxide or silicon oxidnitride is in contact with oxide 230, oxide 2 This can compensate for the oxygen deficiency present in 30.

[0299] The conductors that make up the semiconductor device include aluminum, chromium, copper, silver, gold, platinum, and Tal, nickel, titanium, molybdenum, tungsten, hafnium, vanadium, niole B, manganese, magnesium, zirconium, beryllium, indium, ruthenium, i Metallic elements selected from lydium, strontium, lanthanum, etc., or the aforementioned metal elements It is preferable to use an alloy composed of the element or an alloy combining the aforementioned metal elements. For example, tantalum nitride, titanium nitride, tungsten, titanium and aluminum nitride Materials, nitrides containing tantalum and aluminum, ruthenium oxide, ruthenium nitride, strontium Oxides containing thium and ruthenium, oxides containing lanthanum and nickel, etc. are used. Preferred. Also preferred are tantalum nitride, titanium nitride, nitrides containing titanium and aluminum, and tan. Nitrides containing aluminum, ruthenium oxide, ruthenium nitride, strontium and Oxides containing ruthenium, and oxides containing lanthanum and nickel, are conductive materials that are resistant to oxidation. Alternatively, it is preferable because it is a material that maintains conductivity even when absorbing oxygen. Also, phosphorus, etc. Highly electrically conductive semiconductors, such as polycrystalline silicon containing impurity elements, and nickel Silicides such as kelsilicide may also be used.

[0300] Furthermore, multiple conductive layers formed from the above materials may be used in a laminated manner. For example, the gold mentioned above A laminated structure may be formed by combining a material containing a group element with a conductive material containing oxygen. Furthermore, a laminated structure combining the aforementioned metal element-containing material and a nitrogen-containing conductive material. It may also be constructed as follows: a material containing the aforementioned metal element, a conductive material containing oxygen, and nitrogen A laminated structure may be formed by combining a conductive material containing with .

[0301] Furthermore, when an oxide is used in the channel formation region of a transistor, the gate electrode is A conductive material that functions as such combines a material containing the aforementioned metal element and a conductive material containing oxygen. It is preferable to use a combined laminated structure. In this case, an oxygen-containing conductive material is used. It is preferable to place it on the channel formation region side. It is preferable to place an oxygen-containing conductive material on the channel formation region side. This makes it easier for oxygen released from the conductive material to be supplied to the channel-forming region.

[0302] In particular, as a conductor that functions as a gate electrode, it is contained in the metal oxide in which the channel is formed. It is preferable to use a conductive material containing a metal element and oxygen. Conductive materials containing elements and nitrogen may be used. For example, titanium nitride, tantalum nitride, etc. A conductive material containing nitrogen may be used. In addition, indium tin oxide and tungsten oxide may be used. Contains indium oxide, indium zinc oxide containing tungsten oxide, and titanium oxide. Indium oxide, indium tin oxide containing titanium oxide, indium zinc oxide, Indium tin oxide with added chlorine may also be used. Alternatively, indium gallium oxide containing nitrogen may be used. Zinc oxide may also be used. Using such a material allows for the formation of channels. It may be possible to capture hydrogen contained in metal oxides. Alternatively, the outer insulator... In some cases, it is possible to capture hydrogen that has been introduced from other sources.

[0303] Figure 11 shows a semiconductor device having transistor 200B. Figure 11(A) shows the semiconductor device These are top views of the body apparatus, and Figures 11(B) to 11(D) are, respectively, in Figure 11(A). This is a cross-sectional view between the dashed lines A1-A2, A3-A4, and A5-A6. Note that Figure 11( Figure B) can be considered a cross-sectional view of transistor 200B in the channel length direction. Figure 11(C) is This can also be described as a cross-sectional view of transistor 200B in the channel width direction. Note that in Figure 11(A), Some elements have been omitted for clarity in the diagram.

[0304] Transistor 200B differs in the shape of insulator 283, insulator 287, insulator 274 The insulator 271a and the insulator 271b are present, and the oxide 230c and the oxide It differs from the 200A transistor in that it does not have the 230d.

[0305] In the semiconductor device shown in Figure 11, insulators 214, 216, 222, and 22 4. Insulators 254, 280, and 282 are patterned. Insulators 287 and 283 are insulators 214, 216, 222, and It has a structure that covers 224, insulator 254, insulator 280, and insulator 282. Furthermore, the insulator 287 is located on the top surface of the insulator 212, the side surface of the insulator 214, and the side surface of the insulator 216. Side of insulator 222, side of insulator 224, side of insulator 254, side of insulator 280, The insulator 283 is in contact with the side surface and the top surface of the insulator 282, and the insulator 283 is in contact with the insulator 287 It is in contact with the top and side surfaces. This results in oxide 230, insulator 214, insulator 216, and insulation Body 222, insulator 224, insulator 254, insulator 280, and insulator 282, etc. are insulating It is isolated from the outside by the body 287 and the insulator 283, and the insulator 212. The transistor 200B is sealed with insulators 287 and 283 and 212. It is placed within the designated area.

[0306] For example, insulators 214, 282, and 287 capture hydrogen and solidify hydrogen Formed using a material having the function of, the insulator 212 and insulator 283 are treated with hydrogen and oxygen. It is preferable to form it using a material that has the function of suppressing diffusion. Typically, insulating Aluminum oxide can be used as body 214, insulator 282, and insulator 287. It is possible. Also, typically silicon nitride is used as insulator 212 and insulator 283. It is possible.

[0307] With the above configuration, hydrogen contained outside the sealed region will enter the sealed region This can suppress contamination. Therefore, the low hydrogen concentration in the transistor It can be held.

[0308] Note that in transistor 200B shown in Figure 11, insulator 212, insulator 287, and insulation The diagram shows a configuration in which body 283 is provided as a single layer, but each is a single-layer structure. A laminated structure is also acceptable.

[0309] Furthermore, the insulator 287 does not need to be provided. If the insulator 287 is not provided, the transistor 200B is placed within the region sealed by insulators 212 and 283. By doing so, hydrogen contained outside the sealed area will mix into the sealed area. This can further suppress the low hydrogen concentration in the transistor. It can be held.

[0310] The insulator 274 functions as an interlayer film. The dielectric constant of the insulator 274 is higher than that of the insulator 214. A low dielectric constant is preferable. By using a material with a low dielectric constant as the interlayer film, parasitic capacitance is generated between the wiring. This can reduce the amount of heat. The insulator 274 is made of the same material as the insulator 280, for example. It can be established.

[0311] Furthermore, it is preferable to deposit the insulating film that forms the insulator 274 using a sputtering method. Films deposited using the sputtering method are preferable because they have a low hydrogen concentration. Therefore, in the process of forming the insulating film, the hydrogen concentration in the transistor increases. It can be suppressed.

[0312] Furthermore, the insulator 287, the insulator 283, and the insulating film are continuously used without being exposed to the atmospheric environment. It is preferable to form a film. By forming the film continuously without exposing it to the atmospheric environment, an insulator 287 Furthermore, it is possible to prevent impurities or moisture from the atmospheric environment from adhering to the insulator 283. , the interface between insulator 287 and insulator 283 and the vicinity of the interface, and the insulator 283 and the above insulation The interface with the film and the vicinity of the interface can be kept clean. Furthermore, the manufacturing process of semiconductor devices can be simplified. It can be transformed.

[0313] In the semiconductor device shown in Figure 11, an insulator 271a is located between the conductor 242a and the insulator 254. An insulator 271b is provided between the conductor 242b and the insulator 254.

[0314] Here, insulators 271a and 271b have the function of suppressing the diffusion of oxygen. This is preferable. This allows the conductor 242a and which function as source and drain electrodes to function as source and drain electrodes. The conductor 242b can suppress the absorption of excess oxygen present in the insulator 280. Furthermore, by suppressing the oxidation of conductors 242a and 242b, the transistor and distribution This can suppress the increase in contact resistance with the wire. Therefore, for transistor 200B It can provide good electrical characteristics and reliability. Insulators 271a and 271b are For example, it can be provided using the same material as the insulator 254.

[0315] Furthermore, in the semiconductor device manufacturing method shown in Figure 11, insulator 271a and insulator 271b The insulating film and the conductive layer provided on the insulating film are used as a mask when forming the conductor 242. This enables the conductor 242 (conductor 242a and conductor 242b) to function. ) has a corner-shaped end where the side and top surfaces meet. By becoming angular, the cross-sectional area of ​​the conductor 242 is larger compared to when the end has a curved surface. This reduces the resistance of conductor 242, thus reducing the impedance of transistor 200B. The current can be increased.

[0316] Furthermore, by creating a configuration that does not include oxide 230c and oxide 230d, adjacent to each other The formation of parasitic transistors between the two transistors 200B is suppressed, and the conductor 26 This can suppress the occurrence of a leakage path along zero. Therefore, good electrical characteristics are achieved. A semiconductor device can be provided that has and is capable of miniaturization or high integration.

[0317] This embodiment can be combined with other embodiments as appropriate.

[0318] (Embodiment 3) In this embodiment, the pixels of a display device according to one aspect of the present invention will be explained with reference to Figure 12.

[0319] [Pixels] The display device of this embodiment is an m-row, n-column matrix (where m and n are integers greater than or equal to 1). It has multiple pixels arranged in a certain manner. Figure 12 shows pixel 200(i,j) (where i is 1 or greater than or equal to m). An example of a circuit diagram for the integers below (where j is an integer between 1 and n, inclusive) is shown.

[0320] The pixel 200(i,j) shown in Figure 12 is connected to the light-emitting element 210, switch SW21, and switch S It has W22, transistor M, and capacitive element C1.

[0321] In this embodiment, an example is shown in which a transistor is used as the switch SW21. The gate of SW21 is electrically connected to scan line GL1(i). The drain and the other are electrically connected to the signal line SL(j) on one side and to the transistor on the other. It is electrically connected to the gate M.

[0322] In this embodiment, an example is shown in which a transistor is used as the switch SW22. The gate of SW22 is electrically connected to scan line GL2(i). The drain and the gate of transistor M are connected, with one being electrically connected to wiring COM and the other to the gate of transistor M. It is electrically connected to the .

[0323] The gate of transistor M is connected to one electrode of the capacitive element C1, the source of switch SW21, and The other end of the drain, and the other end of the source and drain of switch SW22 are electrically connected. The source and drain of transistor M are electrically connected to the CATHODE wiring, one of which is connected to the other. The other end is electrically connected to the cathode of the light-emitting element 210.

[0324] The other electrode of the capacitive element C1 is electrically connected to the wiring CATHODE.

[0325] The anode of the light-emitting element 210 is electrically connected to the wiring ANODE.

[0326] Scan line GL1(i) has the function of supplying a selection signal. Scan line GL2(i) is control It has the function of supplying signals. Signal line SL(j) has the function of supplying image signals. A constant potential is supplied to the COM, CATHODE, and ANODE wires, respectively. The anode side of the light-emitting element 210 is set to a high potential, and the cathode side is set to a lower potential than the anode side. It is possible.

[0327] Switch SW21 is controlled by a selection signal and controls the selected state of pixel 200(i,j). It functions as a selection transistor for that purpose.

[0328] Transistor M controls the current flowing to the light-emitting element 210 according to the potential supplied to its gate. It functions as a drive transistor. When switch SW21 is in the conductive state, signal line SL The image signal supplied to (j) is supplied to the gate of transistor M, and depending on its potential, The luminescence brightness of the light-emitting element 210 can be controlled.

[0329] Switch SW22 has the function of controlling the gate potential of transistor M based on a control signal. It has. Specifically, switch SW22 generates a potential that puts transistor M into a non-conductive state. It can be supplied to the gate of transistor M.

[0330] Switch SW22 can be used, for example, to control pulse width. Based on control signals. During this period, current can be supplied from transistor M to light-emitting element 210. Alternatively, light emission The element 210 can represent grayscale based on the image signal and control signal.

[0331] Here, each transistor in pixel 200(i,j) has a channel formed within it. It is preferable to apply a transistor using a metal oxide (oxide semiconductor) as the semiconductor layer. stomach.

[0332] A metal oxide with a wider band gap and lower carrier concentration than silicon is used in this technology. The inverter can achieve an extremely small off-current. The electric current causes the charge accumulated in the capacitive element connected in series with the transistor to be released over a long period of time. It is possible to hold it. Therefore, in particular, switch S connected in series with capacitive element C1 The W21 and switch SW22 use transistors with oxide semiconductors. This is preferable. In addition, other transistors also use oxide semiconductors in a similar manner. By using this method, manufacturing costs can be reduced.

[0333] Furthermore, the transistor in pixel 200(i,j) has a semiconductor in which a channel is formed. Transistors using silicon control can also be used. In particular, single-crystal silicon and polycrystalline silicon By using highly crystalline silicon such as CON, a high field-effect mobility can be achieved. This is preferable because it allows for faster operation.

[0334] Furthermore, oxide semiconductors are applied to one or more of the transistors in pixel 200(i,j). The configuration uses transistors with silicon applied to them, and other transistors with silicon applied to them. That's fine.

[0335] Note that in Figure 12, the transistor is represented as an n-channel transistor. However, p-channel transistors can also be used.

[0336] The structure of the transistors in the display device is not particularly limited. For example, planar transistors It can be a staggered transistor, or an inverse staggered transistor. It may also be a stator. Also, either a top gate structure or a bottom gate structure transition A sta structure may be used. Alternatively, gate electrodes may be provided above and below the channel.

[0337] For example, an OS transistor can be used in the transistors of the display device. This makes it possible to create transistors with extremely low off-current.

[0338] Alternatively, a Si transistor may be used for the transistor in the display device. Examples of transistors include those made of amorphous silicon, and transistors made of crystalline silicon. Transistors with capacitors (typically low-temperature polysilicon), and transistors with single-crystal silicon Examples include transistors.

[0339] This embodiment can be combined with other embodiments as appropriate.

[0340] (Embodiment 4) In this embodiment, the OS transistor described in the above embodiment can be used. This section explains metal oxides (also known as oxide semiconductors).

[0341] The metal oxide preferably contains at least indium or zinc. In particular, indium It is preferable that it also contains aluminum, gallium, and zinc. It is preferable that it contains thorium, tin, etc. Also, boron, silicon, titanium, Iron, nickel, germanium, zirconium, molybdenum, lanthanum, cerium, neodymium One of the following materials is selected from: luminous, hafnium, tantalum, tungsten, magnesium, cobalt, etc. It may contain one or more species.

[0342] <Classification of crystal structures> First, we will explain the classification of crystal structures in oxide semiconductors using Figure 13(A). Figure 13(A) shows an oxide semiconductor, typically IGZO (In, Ga, Zn, etc.). This diagram illustrates the classification of crystal structures (including metal oxides).

[0343] As shown in Figure 13(A), oxide semiconductors can be broadly classified into "Amorphous" "Shape)", "Crystalline (crystalline)", and "Crystal (crystal)", It is classified as follows: Also, within "Amorphous," there are completely amo It includes rphous. Also, within "Crystalline" there is CAAC(c- axis-aligned crystalline), nc(nanocrystal This includes line, and CAC (cloud-aligned composite). The classification of "Crystalline" includes single crystal, p Polycrystalline and completely amorphous crystals are excluded. Furthermore, within "Crystal," there are single crystals and poly crystals. It includes rystal.

[0344] Note that the structures within the thick frame shown in Figure 13(A) are "Amorphous" and "C It is an intermediate state between "crystal" and a new boundary region (New crystal This structure belongs to the alline phase. In other words, this structure is energetic Unlike the unstable "Amorphous" and "Crystal," it is completely different. This can be rephrased as having different structures.

[0345] The crystal structure of the film or substrate is determined by X-ray diffraction (XRD). It can be evaluated using the (on) spectrum. Here, the quartz glass substrate and "Cr IGZO (also called crystalline IGZO) has a crystalline structure classified as "ystalline". XRD obtained by GIXD (Grazing-Incidence XRD) measurement of the membrane. The spectra are shown in Figure 13(B) and Figure 13(C), respectively. Note that the GIXD method is used for thin films. This method is also called the Seemann-Bohlin method. (See Figures 13(B) and 13(C) below.) The XRD spectrum obtained by the GIXD measurement shown in Figure 1 will be simply referred to as the XRD spectrum. Figure 3(B) shows the XRD spectrum of a quartz glass substrate, and Figure 13(C) shows the XRD spectrum of a crystalline IGZO film. The composition of the crystalline IGZO film shown in Figure 13(C) is In:Ga:Zn=4:2:3 [Atomic ratio] is near. Also, the thickness of the crystalline IGZO film shown in Figure 13(C) is 500 It is in nm.

[0346] As shown by the arrow in Figure 13(B), the shape of the XRD spectrum peaks on the quartz glass substrate The shape is almost symmetrical. On the other hand, as shown by the arrow in Figure 13(C), the crystalline IGZO film Therefore, the shape of the peaks in the XRD spectrum is asymmetrical. The asymmetrical shape clearly indicates the presence of crystals in the film or substrate. Therefore, if the peak shape of the XRD spectrum is not symmetrical, the film or substrate is amorphous. It cannot be said that it is in a state. Furthermore, Figure 13(C) shows a crystal at 2θ=31° or near that angle. The phase (IGZO crystal phase) is clearly indicated in the XRD spectrum. The asymmetrical peaks originate from diffraction peaks caused by the crystalline phase (tiny crystals). It is presumed that so.

[0347] Specifically, the interference of X-rays scattered by atoms contained in IGZO is 2θ=34° or It is presumed to contribute to the nearby peak. Also, minute crystals have 2θ=31° or so It is presumed to contribute to the nearby peak. Figure 13(C) shows the XR of the crystalline IGZO film. In the D spectrum, at the peak at or near 2θ=34°, the peak width on the lower angle side is The area widens. This is due to a peak in the crystalline IGZO film at or near 2θ = 31°. This suggests the presence of minute crystals within the material.

[0348] Furthermore, the crystal structure of the film or substrate is determined by nano-beam diffraction (NBED). Diffraction patterns observed by electron diffraction (extremely low-voltage electrons) It can be evaluated using the sub-ray diffraction pattern (also called the sub-ray diffraction pattern). The quartz glass substrate and the substrate temperature... The diffraction patterns of IGZO films deposited at room temperature are shown in Figure 13(D) and Figure 13(E), respectively. Figure 13(D) shows the diffraction pattern of the quartz glass substrate, and Figure 13(E) shows the diffraction pattern of the IGZO film. Yes. Note that the IGZO film shown in Figure 13(E) has an In:Ga:Zn ratio of 1:1:1 [number of atoms]. The film is deposited by sputtering using an oxide target of [ratio]. In micro-electron diffraction, electron diffraction is performed with a probe diameter of 1 nm.

[0349] Furthermore, as shown in Figure 13(D), a halo was observed in the diffraction pattern of the quartz glass substrate. Thus, it can be confirmed that the quartz glass is in an amorphous state. Also, as shown in Figure 13(E) Furthermore, the diffraction pattern of an IGZO film deposited at room temperature shows a spot-like pattern rather than a halo. A crystalline state is observed. Therefore, the IGZO film deposited at room temperature is neither crystalline nor amorphous. It is presumed that this is an intermediate state, and therefore it cannot be concluded that it is an amorphous state.

[0350] <<Oxide semiconductor structure>> Note that oxide semiconductors, when considering their crystal structure, may be classified differently from those shown in Figure 13(A). There are combinations. For example, oxide semiconductors include single-crystal oxide semiconductors and other non-single-crystal oxides. Semiconductors can be divided into two categories. Non-single-crystal oxide semiconductors include, for example, the aforementioned CAAC-O There are S and nc-OS. In addition, non-single-crystal oxide semiconductors include polycrystalline oxide semiconductors and pseudo Amorphous-like oxide semiconductor (a-like OS) This includes materials such as (e) semiconductors and amorphous oxide semiconductors.

[0351] Here, we will provide details on the CAAC-OS, nc-OS, and a-like OS mentioned above. Give an explanation.

[0352] [CAAC-OS] CAAC-OS has multiple crystalline regions, and these multiple crystalline regions are arranged with their c-axis in a specific direction. It is an oxide semiconductor that is oriented in a particular direction. Note that the specific direction refers to the thickness direction of the CAAC-OS film. The direction normal to the surface on which the CAAC-OS film is formed, or the direction normal to the surface of the CAAC-OS film. Furthermore, a crystalline region is a region in which the atomic arrangement has periodicity. If considered as an arrangement, a crystalline region is also a region with a aligned lattice arrangement. Furthermore, CAAC-O S has a region in the ab-plane direction where multiple crystalline regions are connected, and this region is strained. This can sometimes occur. Note that strain refers to the deformation of the lattice arrangement in a region where multiple crystal regions are connected. Areas where the orientation of the grid arrangement changes between aligned regions and aligned regions with a different grid arrangement. This refers to the fact that CAAC-OS is c-axis oriented and has a clear orientation in the ab-plane direction. It is an oxide semiconductor that does not exist.

[0353] Each of the above multiple crystalline regions is composed of one or more minute crystals (with a maximum diameter of 10n It is composed of crystals that are less than m in size. If the crystalline region is composed of one minute crystal, The maximum diameter of the crystalline region is less than 10 nm. Furthermore, the crystalline region is composed of numerous tiny crystals. If this is the case, the size of the crystalline region may be around several tens of nanometers.

[0354] In addition, In-M-Zn oxide (where M is aluminum, gallium, yttrium, and tin) In one or more types selected from titanium, etc., CAAC-OS is indigenous A layer containing ions (In) and oxygen (hereinafter referred to as the In layer), and an element M, zinc (Zn), and oxygen A layered crystalline structure (also called a layered structure) is formed by stacking layers containing (M,Zn) layers. ) tends to have. Furthermore, indium and element M are mutually substitutable. Therefore, The (M,Zn) layer may contain indium. Additionally, the In layer contains the element M. This may occur. Furthermore, the In layer may also contain Zn. This layered structure is, for example, In high-resolution TEM images, it is observed as a grid pattern.

[0355] When structural analysis of a CAAC-OS film is performed using, for example, an XRD instrument, the θ / 2θ skid is observed. Out-of-plane XRD measurements using a champ showed a peak indicating c-axis orientation at 2θ. It is detected at 31° or near that angle. Note that the position of the peak indicating c-axis orientation (value of 2θ) This may vary depending on the type and composition of the metal elements that make up CAAC-OS.

[0356] Furthermore, for example, in the electron diffraction pattern of a CAAC-OS film, multiple bright spots (spots) may be observed. ) is observed. Note that one spot and another spot are determined by the incident electron beam that has passed through the sample. Observed at a point-symmetric position with respect to the spot (also called a direct spot) as the center of symmetry. .

[0357] When the crystal region is observed from the specific direction described above, the lattice arrangement within that crystal region is a hexagonal lattice. While this is the basic principle, the unit cell is not necessarily a regular hexagon and may be a non-regular hexagon. Also, In the distortion described, there may be grid arrangements such as pentagons and heptagons. Note that CAAC- In OS, clear grain boundaries can be observed even near strain. It is not possible. In other words, the formation of grain boundaries is suppressed by the distortion of the lattice arrangement. This can be seen. This is because CAAC-OS has a dense arrangement of oxygen atoms in the ab-plane direction. Due to the absence of certain elements, or because the substitution of metal atoms changes the bond distance between atoms, This is thought to be because it allows for distortion to be tolerated.

[0358] Furthermore, a crystal structure in which clear grain boundaries can be observed is known as polycrystalline. It is called l). The grain boundaries become recombination centers, where carriers are trapped and the transistor is formed This is highly likely to cause a decrease in current, a decrease in field-effect mobility, etc. Therefore, a clear conclusion is reached. CAAC-OS, which lacks visible grain boundaries, has a crystal structure suitable for the semiconductor layer of transistors. It is one of the crystalline oxides. Note that CAAC-OS requires the presence of Zn. The configuration is preferable. For example, In-Zn oxide and In-Ga-Zn oxide are In oxide It is preferable because it can suppress the generation of grain boundaries more effectively than other materials.

[0359] CAAC-OS is an oxide semiconductor with high crystallinity and no clearly defined grain boundaries. Therefore, CAAC-OS is less prone to a decrease in electron mobility caused by grain boundaries. Furthermore, the crystallinity of oxide semiconductors can decrease due to impurities or the formation of defects. Therefore, CAAC-OS is also an oxide semiconductor with few impurities and defects (such as oxygen vacancies). Yes, that's correct. Therefore, oxide semiconductors containing CAAC-OS have stable physical properties. Therefore, oxide semiconductors containing CAAC-OS are highly heat-resistant and reliable. -OS is stable even at high temperatures (so-called thermal budget) during the manufacturing process. Therefore, using CAAC-OS in OS transistors expands the degree of freedom in the manufacturing process. This becomes possible.

[0360] [nc-OS] nc-OS is used in minute regions (for example, regions between 1 nm and 10 nm, especially between 1 nm and 3 nm). It has periodicity in the atomic arrangement in the region of less than nm. In other words, nc-OS is minute It has crystals. The size of these minute crystals is, for example, between 1 nm and 10 nm. In particular, because they are between 1 nm and 3 nm in size, these minute crystals are also called nanocrystals. In nc-OS, no regularity is observed in the crystal orientation between different nanocrystals. Therefore, across the entire film... No orientation is observed. Therefore, nc-OS is a-like OS depending on the analysis method. In some cases, it may be indistinguishable from amorphous oxide semiconductors. For example, XR When performing structural analysis using device D, an out-of-plane scan using θ / 2θ is performed. XRD measurements did not detect any peaks indicating crystallinity. Furthermore, for the nc-OS film, Electron diffraction (control) using an electron beam with a probe diameter larger than that of the crystal (e.g., 50 nm or more) Also called limited-field electron diffraction, when this is performed, a diffraction pattern similar to a halo pattern is observed. On the other hand, for nc-OS films, the particles are close in size to or smaller than the nanocrystals. Electron diffraction using electron beams with a diameter (e.g., 1 nm to 30 nm) (nanobeam electron beam) When diffraction is performed, multiple particles are found within a ring-shaped region centered on the direct spot. In some cases, electron diffraction patterns in which spots are observed can be obtained.

[0361] [a-like OS] a-like OS is an oxide semiconductor having a structure between nc-OS and amorphous oxide semiconductors. It is a conductor. a-like OS has porous or low-density regions. That is, a-like OS has lower crystallinity compared to nc-OS and CAAC-OS. Also, it has a-like properties. OS has a higher hydrogen concentration in the membrane compared to nc-OS and CAAC-OS.

[0362] <<Oxide Semiconductor Composition>> Next, we will explain the details of CAC-OS mentioned above. Note that CAC-OS is a material composition. Regarding.

[0363] [CAC-OS] CAC-OS refers to, for example, metal oxides in which the elements constituting the metal oxide are between 0.5 nm and 10 nm in size. Preferably, a composition of material that is unevenly distributed with a size of 1 nm to 3 nm or near that size. In addition, in the following, in a metal oxide, one or more metal elements are unevenly distributed, The region containing the metallic element is 0.5 nm to 10 nm, preferably 1 nm to 3 nm. The following state, where particles of similar or near-similar size are mixed, is also referred to as a mosaic or patchy appearance.

[0364] Furthermore, CAC-OS is a system where the material separates into a first region and a second region, resulting in a mosaic effect. This results in a cloud-like structure, where the first region is distributed within the membrane (hereinafter also referred to as a cloud-like structure). Therefore, CAC-OS is a mixture of the first region and the second region. It is a composite metal oxide having the following configuration.

[0365] Here, In for the metal elements constituting CAC-OS in In-Ga-Zn oxide The atomic ratios of , Ga, and Zn are denoted as [In], [Ga], and [Zn], respectively. For example, in CAC-OS in In-Ga-Zn oxide, the first region is [ This is the region where [In] is greater than [In] in the composition of the CAC-OS film. Also, the second This region is the region where [Ga] is greater than the [Ga] in the composition of the CAC-OS film. Alternatively, for example, in the first region, [In] is greater than [In] in the second region. Furthermore, the region where [Ga] is smaller than the region where [Ga] is smaller. In region 2, [Ga] is greater than [Ga] in region 1, and [In] is This is a region smaller than [In] in the first region.

[0366] Specifically, the first region mentioned above is mainly composed of indium oxide, indium zinc oxide, etc. This is the region. Furthermore, the second region mentioned above includes gallium oxide, gallium zinc oxide, etc. This is the region in which is the principal component. In other words, the first region described above is called the region in which In is the principal component. It can be replaced. Furthermore, the second region mentioned above can be rephrased as the region with Ga as the main component. It is possible.

[0367] Furthermore, a clear boundary may not be observed between the first region and the second region described above.

[0368] Furthermore, CAC-OS in In-Ga-Zn oxide refers to In, Ga, Zn, and O In the material composition, there is a region where Ga is the main component and a region where In is the main component. This refers to a configuration in which each region is mosaic-like, and these regions exist randomly. Therefore, it is presumed that CAC-OS has a structure in which metallic elements are unevenly distributed. .

[0369] CAC-OS is formed, for example, by sputtering under conditions where the substrate is not intentionally heated. It is possible. Also, when forming CAC-OS by sputtering, the deposition gas and Then, select from inert gases (typically argon), oxygen gas, and nitrogen gas. You can use one or more of these. Also, the oxygen gas in relation to the total flow rate of the deposition gas during film formation. A lower flow rate ratio of oxygen gas is preferable, for example, a lower ratio of oxygen gas to the total flow rate of the film deposition gas during film formation. The flow rate ratio is preferably 0% or more and less than 30%, more preferably 0% or more and 10% or less.

[0370] Furthermore, for example, in CAC-OS in In-Ga-Zn oxide, energy-dispersive X Linear spectroscopy (EDX: Energy Dispersive X-ray spectrometer) EDX mapping obtained using scopy revealed a region with In as its main component (1st A structure in which a region (the first region) and a region mainly composed of Ga (the second region) are unevenly distributed and mixed. It can be confirmed that they possess it.

[0371] Here, the first region is a region with higher conductivity compared to the second region. In other words, the first region The flow of carriers through this region leads to the emergence of conductivity as a metal oxide. Therefore The first region is distributed in a cloud-like manner within the metal oxide, resulting in a high field-effect mobility (μ This can be achieved.

[0372] On the other hand, the second region is a region with higher insulating properties compared to the first region. In other words, the second region By distributing the region within the metal oxide, leakage current can be suppressed.

[0373] Therefore, when CAC-OS is used in a transistor, the conductivity due to the first region and the second region The insulating properties originating from region 2 work complementaryly to create a switching function. (The function to turn it on / off) can be added to CAC-OS. In other words, CAC- OS refers to a material that has both conductive and insulating properties in some parts. The whole structure functions as a semiconductor. The conductive and insulating functions are separated. This allows both functions to be maximized. Therefore, CAC-OS is transistor By using it, a high on-current (I on ), high field effect mobility (μ), and good swim It can perform a clicking motion.

[0374] Furthermore, transistors using CAC-OS are highly reliable. Therefore, CAC-OS is, It is ideal for various semiconductor devices, including display devices.

[0375] Oxide semiconductors can take on diverse structures, each possessing different properties. One embodiment of the present invention Oxide semiconductors include amorphous oxide semiconductors, polycrystalline oxide semiconductors, a-like OS, and CA. It may have two or more of the following: C-OS, nc-OS, and CAAC-OS.

[0376] <Transistors containing oxide semiconductors> Next, we will explain the case where the above oxide semiconductor is used in a transistor.

[0377] By using the above oxide semiconductor in transistors, transistors with high field-effect mobility can be produced. It can be achieved. Furthermore, highly reliable transistors can be realized.

[0378] It is preferable to use an oxide semiconductor with a low carrier concentration for the transistor. For example, The carrier concentration of oxide semiconductors is 1 × 10⁻⁶ 17 cm -3 The following is preferably 1 × 10 15 cm -3 More preferably 1 × 10 13 cm-3 More preferably 1 × 10 11 c m -3 More preferably 1 × 10 10 cm -3 It is less than 1 × 10 -9 cm -3 That concludes the explanation. Furthermore, when lowering the carrier concentration of the oxide semiconductor film, The impurity concentration in the conductive film can be reduced to lower the defect level density. In this specification, High-purity intrinsic or substantially high-purity intrinsic refers to a substance with a low impurity concentration and a low defect level density. Furthermore, oxide semiconductors with low carrier concentrations are made of high-purity intrinsic or substantially high-purity intrinsic material. It is sometimes called an oxide semiconductor.

[0379] Furthermore, oxide semiconductor films that are high-purity intrinsic or substantially high-purity intrinsic have a low defect level density. Therefore, the trap level density may also be low.

[0380] Furthermore, the time required for charges trapped in the trap levels of oxide semiconductors to disappear is long. Furthermore, it can behave as if it were a fixed charge. Therefore, it can behave as if it were a fixed charge. Transistors in which a channel formation region is formed in an oxide semiconductor exhibit unstable electrical properties. There are cases where this is the case.

[0381] Therefore, in order to stabilize the electrical characteristics of the transistor, the impurity concentration in the oxide semiconductor must be Reducing it is effective. Also, in order to reduce the impurity concentration in oxide semiconductors, It is also preferable to reduce the concentration of impurities in the contacting film. Examples of impurities include hydrogen, nitrogen, and aluminum. Examples include potash metals, alkaline earth metals, iron, nickel, and silicon.

[0382] <Impurities> Here, we will explain the effects of various impurities in oxide semiconductors.

[0383] In oxide semiconductors, if silicon or carbon, which are among the Group 14 elements, are present, the oxide Defect levels are formed in semiconductors. Therefore, silicon and carbon in oxide semiconductors. The concentration of silicon and carbon near the interface with the oxide semiconductor (by secondary ion mass spectrometry) SIMS (Secondary Ion Mass Spectrometry) The resulting concentration is 2 × 10 18 atoms / cm 3 The following is preferably 2 × 10 17 at oms / cm 3 The following applies:

[0384] Furthermore, if alkali metals or alkaline earth metals are present in the oxide semiconductor, defect levels are formed. This can result in the generation of carriers. Therefore, alkali metals or alkaline earth metals Transistors using oxide semiconductors containing this material tend to exhibit normally-on characteristics. Therefore, alkali metals or alkaline earth metals in oxide semiconductors obtained by SIMS The concentration of 1 × 10 18 atoms / cm 3 The following is preferably 2 × 10 16 atom / cm 3 Do the following:

[0385] Furthermore, in oxide semiconductors, when nitrogen is present, electrons, which are carriers, are generated. The concentration increases, making it easier to convert to n-type. As a result, oxide semiconductors containing nitrogen become semiconductors. The transistor used tends to exhibit normally-on characteristics. Alternatively, in oxide semiconductors... If nitrogen is present, a trap level may be formed. As a result, the transistor Electrical properties may become unstable. For this reason, in oxide semiconductors obtained by SIMS... The nitrogen concentration is 5 × 10 19 atoms / cm 3 Less than 5 × 10 18 Atom s / cm 3 More preferably 1 × 10 18 atoms / cm 3 More preferably, is 5 x 10 17 atoms / cm 3 Do the following:

[0386] Furthermore, the hydrogen contained in oxide semiconductors reacts with the oxygen bonded to the metal atoms to form water. This can sometimes form an oxygen vacancy. When hydrogen enters this oxygen vacancy, the electrons, which are carriers, In some cases, this can be generated. Also, some of the hydrogen combines with oxygen that is bonded to a metal atom, resulting in a It can generate electrons, which are rear electrons. Therefore, using an oxide semiconductor containing hydrogen... Transistors tend to exhibit normally-on characteristics. Therefore, hydrogen in oxide semiconductors It is preferable that it be reduced as much as possible. Specifically, in oxide semiconductors, SIM The hydrogen concentration obtained by S is 1 × 10 20 atoms / cm 3 Less than 1 × 1 0 19 atoms / cm 3 Less than 5x10 18 atoms / cm 3 less than, More preferably 1 × 10 18 atoms / cm 3 Make it less than.

[0387] Using oxide semiconductors with sufficiently reduced impurities in the channel formation region of transistors. This allows for the provision of stable electrical characteristics.

[0388] This embodiment can be combined with other embodiments as appropriate.

[0389] (Embodiment 5) In this embodiment, an electronic device according to one aspect of the present invention will be described with reference to Figures 14 to 18. ru.

[0390] The electronic device of this embodiment has a display device according to one aspect of the present invention in its display unit. The display device has high display quality and low power consumption. The device is easily made higher resolution and larger. Therefore, it can be used in the display units of various electronic devices. It is possible.

[0391] Examples of electronic devices include television equipment, desktop or notebook computers, etc. Sony Computer, monitors for computers, digital signage, pachinko machines, etc. In addition to electronic devices with relatively large screens such as large game consoles, digital cameras, and digital cameras Digital video cameras, digital photo frames, mobile phones, portable game consoles, portable information terminals Examples include sound reproduction devices.

[0392] In particular, the display device according to one aspect of the present invention is capable of increasing resolution, making it suitable for relatively small displays. It can be suitably used in electronic devices having an indicator. For example, This includes wristwatch-type and bracelet-type information terminals (wearable devices), and head-mounted displays. Head-mounted devices such as VR devices like screens, AR devices like glasses, or MR devices. It can be suitably used in wearable devices and the like that can be attached to a person.

[0393] The electronic device of this embodiment has sensors (force, displacement, position, velocity, acceleration, angular velocity, rotational speed, Distance, light, liquid, magnetism, temperature, chemicals, sound, time, hardness, electric field, electric current, voltage, power, radiation (including functions for measuring radiation, flow rate, humidity, gradient, vibration, odor, or infrared radiation) It's fine if you do that.

[0394] The electronic device of this embodiment can have various functions. For example, it can display various information (static Functions to display still images, videos, text images, etc. on the display unit, touch panel function, calendar - Functions to display the date or time, and to run various software (programs) Functions, wireless communication functions, and functions to read programs or data recorded on recording media. It may have the following:

[0395] Figure 14(A) shows a perspective view of the glasses-type electronic device 900. The electronic device 900 is a pair The display panel 901, a pair of housings 902, a pair of optical elements 903, a pair of mounting parts 904, etc. To possess.

[0396] The electronic device 900 displays an image on the display panel 901 in the display area 906 of the optical component 903. An image can be projected. Since the optical element 903 is light-transmitting, the user can project an image of the optical element View the image displayed in the display area 906 by superimposing it onto the transmitted image visible through 903. Therefore, electronic device 900 is an electronic device capable of AR display.

[0397] The display panel 901 of the electronic device 900 has the function of displaying images, as well as the function of capturing images. It is preferable that it has the ability to display. In this case, the electronic device 900 displays via the optical member 903. The panel 901 can receive light incident on it, convert it into an electrical signal, and output it. This captures images of the user's eyes, or the eyes and surrounding area, and transmits the image information externally or electronically. The output can be provided to the arithmetic unit of the sub-device 900.

[0398] One housing 902 is equipped with a camera 905 capable of capturing images of the area in front. Although not shown in the diagram, a wireless receiver or cable can be connected to either of the housings 902. A connector is provided so that video signals and the like can be supplied to the housing 902. By placing an accelerometer such as a gyroscope sensor in position 02, the orientation of the user's head can be detected. It can also detect the orientation and display an image corresponding to that orientation in the display area 906. Preferably, the 902 is equipped with a battery, which can be charged wirelessly or via a wired connection. It is preferable that this be possible.

[0399] Using Figure 14(B), the method for projecting an image onto the display area 906 of the electronic device 900 will be explained. To clarify, the housing 902 contains a display panel 901, a lens 911, and a reflector 912. Furthermore, a half-mirror is provided in the portion of the optical element 903 corresponding to the display area 906. It has a reflective surface 913 that functions as a reflector.

[0400] Light 915 emitted from the display panel 901 passes through the lens 911 and is reflected by the reflector 912. The light is reflected towards the optical member 903. Inside the optical member 903, the light 915 is reflected towards the optical member The end face of 903 undergoes repeated total internal reflection, reaching the reflective surface 913, thereby transferring an image to the reflective surface 913. This is projected. As a result, the user can see the light 915 reflected by the reflective surface 913 and the optical part Both the transmitted light 916 that has passed through the material 903 (including the reflective surface 913) can be seen. .

[0401] Figure 14 shows an example where the reflector 912 and the reflective surface 913 each have curved surfaces. This allows for greater freedom in optical design compared to when these are planar, and light The thickness of the structural member 903 can be reduced. Furthermore, the reflector plate 912 and the reflective surface 913 can be flattened. It can also be used as a surface.

[0402] As the reflector 912, a material having a mirror surface can be used, and it is preferable that it has a high reflectivity. It is also possible to use a half-mirror that utilizes the reflection of a metal film as the reflective surface 913. However, by using a prism that utilizes total internal reflection, the transmittance of transmitted light 916 can be increased. can.

[0403] Here, the electronic device 900 controls the distance and angle between the lens 911 and the display panel 901. It is preferable to have a mechanism to adjust one or both. This allows for focus adjustment and It becomes possible to enlarge and reduce the image, for example, the lens 911 and the display panel 9 One or both of 01 should be configured to be movable in the optical axis direction.

[0404] Preferably, the electronic device 900 has a mechanism that allows the angle of the reflector 912 to be adjusted. By changing the angle of the reflector 912, the position of the display area 906 where the image is displayed can be changed. This makes it possible to position the display area 906 in the optimal position according to the user's eye position. It becomes possible to place them.

[0405] A display device according to one embodiment of the present invention can be applied to the display panel 901. This allows for the creation of an electronic device 900 capable of displaying extremely high resolution.

[0406] Figures 15(A) and 15(B) show perspective views of the goggle-type electronic device 950. Figure A) is a perspective view showing the front, top, and left side of the electronic device 950, and Figure 15(B) is, This is a perspective view showing the back, bottom, and right side of the electronic device 950.

[0407] The electronic device 950 includes a pair of display panels 951, a housing 952, a pair of mounting parts 954, and a buffer part. It has a material 955, a pair of lenses 956, etc. A pair of display panels 951 are located inside the housing 952. They are positioned in a location visible through the lens 956.

[0408] Electronic device 950 is an electronic device for VR. Users wearing electronic device 950, The image displayed on the display panel 951 can be viewed through the lens 956. By displaying different images on a pair of display panels 951, a 3D display using parallax is achieved. It is also possible to do so.

[0409] The rear side of the enclosure 952 is provided with an input terminal 957 and an output terminal 958. The child 957 receives video signals from video output devices and other sources, as well as a battery located inside the housing 952. A cable that supplies power for electrical purposes can be connected. Output terminal 958 is, for example, For example, it can function as an audio output terminal, allowing you to connect earphones, headphones, etc. This is possible. Furthermore, if the configuration allows for the output of audio data via wireless communication, or if external video is used... When outputting audio from an image output device, it is not necessary to provide an audio output terminal.

[0410] The electronic device 950 has a lens 956 and a display panel 951 that adjust according to the user's eye position. It is preferable that these have a mechanism that allows for adjustment of their left and right positions to achieve the optimal position. It is also possible to adjust the focus by changing the distance between the lens 956 and the display panel 951. It is preferable that it has a mechanism to do so.

[0411] A display device according to one aspect of the present invention can be applied to the display panel 951. This allows for the creation of an electronic device 950 capable of displaying extremely high resolution. It can provide a high level of immersion for the user.

[0412] The cushioning member 955 is the part that comes into contact with the user's face (forehead, cheeks, etc.). By fitting snugly against the user's face, it prevents light leakage and enhances immersion. This is possible. The cushioning member 955 is designed to protect the user's face when the user puts on the electronic device 950. It is preferable to use a soft material that adheres closely to the surface. For example, rubber, silicone rubber, Materials such as urethane and sponge can be used. Also, as the cushioning material 955, If you use a material where the surface of pongee or similar is covered with cloth or leather (natural leather or synthetic leather), This design minimizes gaps between the Zar's face and the buffer member 955, effectively preventing light leakage. Components that come into contact with the user's skin, such as the cushioning member 955 and the mounting part 954, are removable. This is preferable because it makes cleaning and replacement easier.

[0413] The electronic device 6500 shown in Figure 16(A) is a portable device that can be used as a smartphone. It is an information terminal.

[0414] The electronic device 6500 consists of a housing 6501, a display unit 6502, a power button 6503, and a button 65 04, includes speaker 6505, microphone 6506, camera 6507, and light source 6508, etc. The display unit 6502 is equipped with a touch panel function.

[0415] A display device according to one aspect of the present invention can be applied to the display unit 6502.

[0416] Figure 16(B) is a schematic cross-sectional view of the housing 6501 including the end on the microphone 6506 side.

[0417] A light-transmitting protective member 6510 is provided on the display surface side of the housing 6501. Within the space surrounded by the protective member 6510, there is a display panel 6511, an optical member 6512, and a touch The sensor panel 6513, printed circuit board 6517, battery 6518, etc. are located here. .

[0418] The protective member 6510 includes a display panel 6511, an optical member 6512, and a touch sensor panel. The 6513 is fixed by an adhesive layer (not shown).

[0419] In the area outside the display unit 6502, a portion of the display panel 6511 is folded back. The FPC6515 is connected to the folded portion. C6516 is mounted. FPC6515 is located on the edge of the printed circuit board 6517. It is connected to the child.

[0420] A flexible display according to one aspect of the present invention can be applied to the display panel 6511. This makes it possible to create extremely lightweight electronic devices. Also, the display panel 6511 is extremely Because it is thin, it is possible to keep the thickness of electronic devices down while also equipping them with a large-capacity 6518 battery. Also, a part of the display panel 6511 is folded back, and the FPC6515 is attached to the back of the pixel area. By positioning the connection points, it is possible to realize electronic devices with narrow bezels.

[0421] Figure 17(A) shows an example of a television system. The television system 7100 is housed in a casing 71 The display unit 7000 is incorporated into 01. Here, the stand 7103 connects to the housing 71 This shows the configuration that supports 01.

[0422] A display device according to one embodiment of the present invention can be applied to the display unit 7000.

[0423] The television device 7100 shown in Figure 17(A) is operated by the operation switches provided on the housing 7101. This can be done via the switch or a separate remote control unit 7111. Alternatively, the display unit 700 It may also be equipped with a touch sensor, and by touching the display unit 7000 with a finger, etc., the TV will The control device 7100 may be operated. The remote control operator 7111 is the remote control operator 71 It may have a display unit that displays the information output from 11. The channel and volume can be controlled using the built-in control keys or touch panel. The video displayed on the display unit 7000 can be operated.

[0424] The television system 7100 will consist of a receiver and a modem, etc. This allows you to receive regular television broadcasts. Additionally, you can receive them via a modem using either a wired or wireless connection. By connecting to a line communication network, one-way (sender to receiver) or bidirectional communication is possible. It is also possible to communicate information in a direction (between a sender and receiver, or between receivers). ru.

[0425] Figure 17(B) shows an example of a notebook personal computer. The Computer 7200 consists of a casing 7211, a keyboard 7212, and a pointing device 7 It has external connection ports 7214, etc. The display unit 7000 is incorporated into the housing 7211. It is being made.

[0426] A display device according to one embodiment of the present invention can be applied to the display unit 7000.

[0427] Figures 17(C) and 17(D) show examples of digital signage.

[0428] The digital signage 7300 shown in Figure 17(C) consists of a housing 7301, a display unit 7000, and It also has a speaker 7303, etc. Furthermore, it has an LED lamp, operation keys (power switch, and It can have an operating switch, connection terminals, various sensors, a microphone, etc. ru.

[0429] Figure 17(D) shows a digital signage 7400 mounted on a cylindrical column 7401. The digital signage 7400 is a display unit 7000 that is installed along the curved surface of the column 7401. It has.

[0430] In Figures 17(C) and 17(D), the display unit 7000 is shown to display a display device according to one embodiment of the present invention. It can be applied.

[0431] The larger the display area 7000, the more information can be provided at once. The wider the area (7000), the more easily it catches people's attention, which can, for example, enhance the effectiveness of advertising. Cut.

[0432] By applying a touch panel to the display unit 7000, images or videos can be displayed on the display unit 7000. It's desirable that it not only displays information but also allows users to operate it intuitively. Also, route information... Alternatively, if used for purposes such as providing traffic information, intuitive operation is possible. This can improve usability.

[0433] Furthermore, as shown in Figures 17(C) and 17(D), the digital signage 7300 or Digital signage 7400 is an information terminal 731 such as a smartphone owned by the user. It is preferable that it be possible to communicate with 1 or an information terminal 7411 via wireless communication. For example, Information about advertisements displayed on the display unit 7000 is transmitted to the information terminal 7311 or information terminal 741. It can be displayed on screen 1. Also, information terminal 7311 or information terminal 741 By operating button 1, the display on display unit 7000 can be switched.

[0434] In addition, the information terminal 7 is connected to the digital signage 7300 or digital signage 7400. Execute a game using the screen of either the 311 or the information terminal 7411 as the control device (controller). It is also possible to allow this. This allows a large number of users to participate in the game simultaneously and enjoy it. It is possible.

[0435] The electronic equipment shown in Figures 18(A) to 18(F) consists of a housing 9000, a display unit 9001, and a speaker. CA9003, Operation Key 9005 (including power switch or operation switch), Connection Terminals 9006, Sensor 9007 (force, displacement, position, velocity, acceleration, angular velocity, rotational speed, distance, light) Liquid, magnetism, temperature, chemicals, sound, time, hardness, electric field, electric current, voltage, power, radiation, flow (including functions that measure quantity, humidity, gradient, vibration, odor, or infrared radiation), Microphone It has n9008, etc.

[0436] The electronic devices shown in Figures 18(A) to 18(F) have various functions. For example, various information Functions to display information (still images, videos, text images, etc.) on the display unit, touch panel function, Features such as rendering, displaying date or time, and various software (programs) Functions that control processing, wireless communication functions, programs or data recorded on recording media It can have functions such as reading and processing data. It is not limited to these, and can have a variety of functions. Electronic devices have multiple display units. It is also permissible to equip electronic devices with cameras, etc., to capture still images and videos, and to use recording media (external) It has functions such as saving to the camera (built into the camera), and displaying the captured image on the display unit. It's okay to be there.

[0437] The details of the electronic equipment shown in Figures 18(A) to 18(F) will be explained below.

[0438] Figure 18(A) is a perspective view showing the personal digital assistant 9101. The personal digital assistant 9101 is, For example, it can be used as a smartphone. Note that the mobile information terminal 9101 is a speaker. A connector 9003, connection terminal 9006, sensor 9007, etc. may be provided. Also, a portable information terminal The end 9101 can display text and image information on its multiple surfaces. As shown in Figure 18(A) This shows an example displaying three icons 9050. Also, information 90 is shown by a dashed rectangle. 51 can also be displayed on other sides of the display unit 9001. An example of information 9051 is: Notifications for incoming emails, social media messages, and phone calls; subject lines and sender names for emails and social media messages. This includes the date and time, battery level, and antenna signal strength. Alternatively, see Information 9051. You may also display icon 9050 or similar in the location where the symbol is displayed.

[0439] Figure 18(B) is a perspective view showing the personal digital assistant (PDA) 9102. The PDA 9102 is, The display unit 9001 has the function of displaying information on three or more sides. Here, information 9052, information This shows an example where Report 9053 and Information 9054 are displayed on different sides. For example, user - With the portable information terminal 9102 stored in the breast pocket of clothing, the portable information terminal 910 Information 9053, displayed in a position visible from above 2, can also be viewed by the user. - This allows you to check the display without taking the personal digital assistant 9102 out of your pocket, for example, when making a phone call. You can decide whether or not to accept it.

[0440] Figure 18(C) is a perspective view showing a wristwatch-type personal information terminal 9200. Personal information terminal 9 200 can be used, for example, as a smartwatch. Also, the display unit 9001 is The display surface is curved, allowing the display to follow the curved surface. The portable information terminal 9200 communicates with, for example, a wireless headset. And you can also make hands-free calls. Also, the 9200 mobile information terminal has connection terminals The 9006 allows for mutual data transmission with other information terminals and also enables charging. The charging operation may also be performed by wireless power supply.

[0441] Figures 18(D) to 18(F) are perspective views showing a foldable portable information terminal 9201. Figure 18(D) shows the mobile information terminal 9201 in its unfolded state, and Figure 18(F) shows it folded. In this state, Figure 18(E) shows the transition from one of Figures 18(D) and 18(F) to the other. This is a perspective view of the device in its state. The 9201 personal digital assistant offers excellent portability when folded, and when unfolded... In this configuration, the seamless, wide display area provides excellent readability. (Portable Information Terminal 92) The display unit 9001 of 01 is connected by three housings 9000 via a hinge 9055. It is supported by. For example, the display unit 9001 has a radius of curvature of 0.1 mm or more and 150 mm or less. It can be bent.

[0442] This embodiment can be combined with other embodiments as appropriate. [Explanation of Symbols]

[0443] C1 Capacitive element GL1 scan lines GL2 scan lines SW21 Switch SW22 Switch 100A display device 100B display device 100C display device 100D display device 100E display device 100F display device 100G display device 100H display device 101 circuit board 102 Protective layer 103 Insulating layer 104 Insulating layer 106 Insulating layer 107a Conductive layer 107b Conductive layer 108 Insulating layer 110a Light-Emitting Diode 110b Light-Emitting Diode 110c Light-Emitting Diode 110d Light-Emitting Diode 112 Electrode 113 Semiconductor layer 114 Emitting layer 115 Semiconductor layer 116 Electrode 117a Conductor 117b Conductor 117c conductor 117d conductor 118a conductive layer 118b Conductive layer 120a transistor 120b Transistor 122 Insulating layer 123 Insulating layer 124a conductive layer 124b Conductive layer 125 Filled bed 126 Protective layer 127 Conductive layer 128 Laser light 130a transistor 130b Transistor 131 circuit boards 132 element separation layer 133 Low resistance region 134 Insulating layer 135 Conductive layer 136 Insulating layer 137 Conductive layer 138 Conductive layer 139 Insulating layer 141 Insulating layer 142 Conductive layer 143 Insulating layer 150A LED board 150B Circuit Board 151 circuit boards 152 Insulating layer 161 Conductive layer 161a Conductive layer 162 Insulating layer 163 Insulating layer 164 Insulating layer 165 Metal oxide layer 166 Conductive layer 167 Insulating layer 168 Conductive layer 181 Insulating layer 182 Insulating layer 183 Insulating layer 184a conductive layer 184b Conductive layer 184c conductive layer 184d conductive layer 185 Insulating layer 186 Insulating layer 187 Conductive layer 188 Insulating layer 189 Conductive layer 190a conductive layer 190b conductive layer 190c conductive layer 190d conductive layer 191 circuit board 192 Adhesive layer 200 pixels 200A Transistor 200B transistor 205 Conductors 205a Conductor 205b Conductor 210 light-emitting elements 212 Insulator 214 Insulator 216 Insulator 222 Insulator 224 Insulator 230 Oxides 230a Oxide 230b Oxide 230c oxide 230d oxide 240 Conductors 240a Conductor 240b conductor 241 Insulator 241a Insulator 241b Insulator 242 Conductors 242a Conductor 242b Conductor 243 Oxides 243a Oxide 243b Oxide 246 Conductors 246a Conductor 246b Conductor 250 Insulator 254 Insulator 260 Conductors 260a Conductor 260b conductor 271a Insulator 271b Insulator 274 Insulator 280 Insulator 282 Insulator 283 Insulator 286 Insulator 287 Insulator 900 Electronic equipment 901 Display Panel 902 cabinet 903 Optical components 904 Mounting part 905 Camera 906 Display area 911 Lens 912 Reflector 913 Reflective surface 915 light 916 Transmitted light 950 Electronic equipment 951 Display Panel 952 enclosures 954 Mounting part 955 Cushioning material 956 Lens 957 Input terminals 958 Output terminal 6500 Electronic equipment 6501 enclosure 6502 Display section 6503 Power button 6504 button 6505 Speaker 6506 Mike 6507 Camera 6508 Light source 6510 Protective component 6511 Display Panel 6512 Optical components 6513 Touch Sensor Panel 6515 FPC 6516 IC 6517 Printed circuit board 6518 Battery 7000 Display 7100 Television equipment 7101 enclosure 7103 Stand 7111 Remote Control Unit 7200 Notebook Personal Computer 7211 enclosure 7212 Keyboard 7213 Pointing device 7214 External connection port 7300 Digital Signage 7301 enclosure 7303 Speaker 7311 Information terminal 7400 Digital Signage 7401 pillars 7411 Information terminal 9000 cabinets 9001 Display section 9003 Speaker 9005 Operation Keys 9006 Connection terminal 9007 Sensor 9008 Microphone 9050 Icon 9051 Information 9052 Information 9053 Information 9054 Information 9055 Hinge 9101 Mobile Information Terminal 9102 Mobile Information Terminal 9200 Mobile Information Terminal 9201 Mobile Information Terminal

Claims

1. A display device having a first insulating layer, a second insulating layer, a first transistor, a second transistor, a first light-emitting diode, a second light-emitting diode, a color conversion layer, and a drive circuit. The first transistor is electrically connected to the first light-emitting diode. The second transistor is electrically connected to the second light-emitting diode. The first insulating layer is located on the first transistor and the second transistor. The first light-emitting diode and the second light-emitting diode are located on the first insulating layer, The color conversion layer is located on the second light-emitting diode, The color conversion layer has the function of converting the light emitted by the second light-emitting diode into longer wavelength light. The color conversion layer does not overlap with the first light-emitting diode. The first transistor and the second transistor each have a metal oxide layer and a gate electrode, The metal oxide layer has a channel-forming region, The height of the upper surface of the gate electrode is equal to or approximately equal to the height of the upper surface of the second insulating layer. The drive circuit has a third transistor, The third transistor has a channel formation region on a semiconductor substrate, The semiconductor substrate overlaps with the first transistor, the second transistor, the first light-emitting diode, and the second light-emitting diode, respectively, via a third insulating layer. The third insulating layer is located between the semiconductor substrate and the first transistor and between the semiconductor substrate and the second transistor. A display device comprising the first transistor and the second transistor, positioned between the third insulating layer and the first insulating layer.

2. In claim 1, The first transistor further comprises a gate insulating layer, a first conductive layer, and a second conductive layer. The metal oxide layer has a first region overlapping with the first conductive layer, a second region overlapping with the second conductive layer, and a third region between the first region and the second region. The first conductive layer and the second conductive layer are positioned spaced apart from each other on the metal oxide layer. The second insulating layer is located on the first conductive layer and the second conductive layer. The second insulating layer has an opening that overlaps with the third region. The gate insulating layer is located inside the opening and overlaps with the side surface of the second insulating layer and the upper surface of the third region. A display device wherein the gate electrode is located inside the opening and overlaps with the side surface of the second insulating layer and the upper surface of the third region via the gate insulating layer.

3. A display device having a first insulating layer, a second insulating layer, a first conductive layer, a second conductive layer, a first transistor, a second transistor, a first light-emitting diode, a second light-emitting diode, a color conversion layer, and a drive circuit. The first transistor is electrically connected to the first light-emitting diode via the first conductive layer. The second transistor is electrically connected to the second light-emitting diode via the second conductive layer. The first insulating layer is located on the first transistor and the second transistor. The first light-emitting diode and the second light-emitting diode are located on the first insulating layer, The first light-emitting diode has a first electrode in contact with the first conductive layer, The second light-emitting diode has a second electrode in contact with the second conductive layer, The height of the upper surface of the first electrode and the height of the upper surface of the second electrode coincide with or approximately coincide with the height of the upper surface of the second insulating layer. The color conversion layer is located on the second light-emitting diode, The color conversion layer has the function of converting the light emitted by the second light-emitting diode into longer wavelength light. The color conversion layer does not overlap with the first light-emitting diode. The first transistor and the second transistor each have a metal oxide layer, The metal oxide layer has a channel-forming region, The drive circuit has a third transistor, The third transistor has a channel formation region on a semiconductor substrate, The semiconductor substrate overlaps with the first transistor, the second transistor, the first light-emitting diode, and the second light-emitting diode, respectively, via a third insulating layer. The third insulating layer is located between the semiconductor substrate and the first transistor and between the semiconductor substrate and the second transistor. A display device comprising the first transistor and the second transistor, positioned between the third insulating layer and the first insulating layer.

4. In any one of claims 1 to 3, The color conversion layer is in contact with the second light-emitting diode, and the display device is provided.

5. In any one of claims 1 to 3, Furthermore, it has a fourth insulating layer, The fourth insulating layer is located between the second light-emitting diode and the color conversion layer. The color conversion layer is in contact with the fourth insulating layer, in a display device.

6. In any one of claims 1 to 5, A display device in which the first light-emitting diode and the second light-emitting diode are each microlight-emitting diodes.

7. In any one of claims 1 to 6, The first light-emitting diode and the second light-emitting diode are display devices that each emit blue light.

8. In any one of claims 1 to 7, A display device in which the first transistor and the second transistor have structures in which one or both of the channel length and channel width are different from each other.

9. In any one of claims 1 to 8, Furthermore, it has a colored layer, The colored layer is located on the color conversion layer, A display device in which the light emitted by the second light-emitting diode is taken out to the outside of the display device via the color conversion layer and the coloring layer.

10. A display module comprising a display device according to any one of claims 1 to 9, and a connector or integrated circuit.

11. The display module according to claim 10, An electronic device having at least one of the following: an antenna, a battery, a housing, a camera, a speaker, a microphone, and an operating button.

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