Substrate processing apparatus and substrate processing method

Abstract

To provide a technique that suppresses reduction in processing efficiency of a substrate and reduces power consumption of a heater.SOLUTION: A substrate processing device comprises: a processing container provided with a carry-in / carry-out port for a substrate; a substrate holding unit for holding the substrate horizontal inside the processing container; a liquid supply unit for supplying a processing liquid to a lower face of the substrate; a cover provided with a gas discharge port for discharging a gas toward a top face of the substrate; a heater for heating the gas; and a control unit. The control unit performs: control for maintaining a temperature of the heater at a second preset temperature during the supply of the processing liquid to the lower face of the substrate; control for maintaining the temperature of the heater at a first preset temperature during a standby step from carry-out start of the substrate to carry-in completion of the next substrate; and control for causing the temperature of the heater to rise from the first preset temperature to the second preset temperature until the carry-in completion of the next substrate by increasing output of the heater during the standby step.SELECTED DRAWING: Figure 4

Description

Technical Field

[0005]

[0001] The present disclosure relates to a substrate processing apparatus and a substrate processing method.

Background Art

[0002] The substrate processing apparatus described in Patent Document 1 includes a substrate rotation holding unit that holds and rotates a substrate horizontally, and a processing liquid supply unit that supplies a processing liquid to the lower surface of the substrate held by the substrate rotation holding unit.

Prior Art Documents

Patent Documents

[0003]

Patent Document 1

Summary of the Invention

Problems to be Solved by the Invention

[0004] One aspect of the present disclosure provides a technique for suppressing a decrease in the processing efficiency of a substrate and reducing the power consumption of a heater.

Means for Solving the Problems

[0005] A substrate processing apparatus according to one aspect of the present disclosure comprises: a processing container provided with a substrate loading / unloading port; a substrate holding unit for horizontally holding the substrate inside the processing container; a liquid supply unit for supplying processing liquid to the lower surface of the substrate held by the substrate holding unit; a cover provided with a gas discharge port for discharging gas toward the upper surface of the substrate held by the substrate holding unit; a gas supply unit for supplying the gas to the cover; a heater provided in the cover for heating the gas; and a control unit. The control unit performs the following: control to maintain the temperature of the heater at a second set temperature higher than a first set temperature while the processing liquid is being supplied to the lower surface of the substrate; control to maintain the temperature of the heater at the first set temperature during a waiting process from the start of the substrate unloading until the completion of the loading of the next substrate; and control to raise the temperature of the heater from the first set temperature to the second set temperature by the completion of the loading of the next substrate by increasing the output of the heater during the waiting process. [Effects of the Invention]

[0006] According to one aspect of this disclosure, it is possible to suppress a decrease in the processing efficiency of the substrate and reduce the power consumption of the heater. [Brief explanation of the drawing]

[0007] [Figure 1] Figure 1 is a cross-sectional view showing an example of a substrate processing apparatus according to one embodiment. [Figure 2] Figure 2 is a cross-sectional view showing an example of the gas and processing liquid flow in the substrate processing apparatus shown in Figure 1. [Figure 3] Figure 3 is a flowchart showing an example of a substrate processing method according to one embodiment. [Figure 4] Figure 4 is a timing chart showing an example of the operation of a substrate processing apparatus. [Figure 5] Figure 5(A) shows the first example of controlling the heating time, and Figure 5(B) shows the second example of controlling the heating time. [Figure 6] Figure 6 shows an example of changing the first set temperature. [Figure 7]Figure 7 is a cross-sectional view showing a modified example of the gas and processing liquid flow in a substrate processing apparatus according to the first modified example. [Figure 8] Figure 8 is a cross-sectional view showing a modified example of the gas and processing liquid flow in a substrate processing apparatus according to the second modified example. [Modes for carrying out the invention]

[0008] Embodiments of this disclosure will be described below with reference to the drawings. In each drawing, the same or corresponding components are denoted by the same reference numerals, and their descriptions may be omitted. In this specification, the X-axis, Y-axis, and Z-axis directions are perpendicular to each other. The X-axis and Y-axis directions are horizontal, and the Z-axis direction is vertical.

[0009] Referring to Figure 1, a substrate processing apparatus 1 according to one embodiment will be described. The substrate processing apparatus 1 comprises a processing container 10, a substrate holding unit 20, a rotary drive unit 35, a liquid supply unit 40, a cover 50, a gas supply unit 60, a heater 70, a cover lifting unit 75, a recovery cup 80, and a control unit 90.

[0010] The processing container 10 houses the substrate W. An inlet / outlet 11 for loading the substrate W is provided on the side wall of the processing container 10. The gate valve 12 opens and closes the inlet / outlet 11 under the control of the control unit 90. An FFU (Fan Filter Unit) 13 is provided on the ceiling of the processing container 10. The FFU 13 is an example of a downflow forming section that forms a downflow inside the processing container 10.

[0011] The substrate W is a semiconductor substrate such as a silicon wafer, or a glass substrate. The substrate W is transported into the processing container 10 via the input / output 11 by the transport device 2. After being processed with the processing liquid, the substrate W is transported out of the processing container 10 via the input / output 11 by the transport device 2.

[0012] The substrate holder 20 holds the substrate W horizontally inside the processing container 10. The substrate holder 20 has a rotating shaft 21 and a base plate 22. The rotating shaft 21 extends in the vertical direction. The rotating shaft 21 is formed in a hollow cylindrical shape. The base plate 22 is provided at the upper end of the rotating shaft 21. The base plate 22 is circular in plan view. The diameter of the base plate 22 is larger than the diameter of the rotating shaft 21. The base plate 22 is formed concentrically with the rotating shaft 21.

[0013] The substrate holder 20 has a plurality of support pins 23. The plurality of support pins 23 are provided on the upper surface of the base plate 22. The plurality of support pins 23 abut against the lower surface of the substrate W and support the substrate W. Alternatively, the substrate holder 20 may have a plurality of claws instead of the plurality of support pins 23. The plurality of claws hold the periphery of the substrate W.

[0014] A recess 24 is formed in the center of the upper surface of the base plate 22. The recess 24 is circular in plan view. Insertion holes 25 are formed in the base plate 22 and the rotating shaft 21, communicating with the bottom surface of the recess 24. The lifting shaft 31 of the substrate relay section 30 is inserted into the insertion hole 25.

[0015] The substrate relay section 30 comprises a lifting shaft 31, a lifting plate 32, a lift pin 33, and a lifting drive unit 34. The lifting plate 32 is provided at the upper end of the lifting shaft 31. The lifting plate 32 is circular in plan view. A lift pin 33 is provided on the upper surface of the lifting plate 32. The lift pin 33 contacts the lower surface of the substrate W and supports the substrate W. The length of the lift pin 33 is shorter than the length of the support pin 23.

[0016] The lifting drive unit 34 moves the lifting plate 32 between a lowered position (see Figure 1) and an raised position, thereby relaying the substrate W between the substrate holding unit 20 and the transport device 2. The lifting drive unit 34 includes a motor and a ball screw that converts the rotational motion of the motor into the linear motion of the lifting shaft 31. The lifting drive unit 34 may also be composed of a pneumatic cylinder or the like.

[0017] The lifting plate 32 is housed in the recess 24 of the base plate 22 in the lowered position. At this time, the lift pin 33 is positioned below the lower surface of the substrate W held by the substrate holding portion 20. On the other hand, when the lifting plate 32 is in the raised position, the substrate W supported by the lift pin 33 is positioned above the recovery cup 80.

[0018] The rotation drive unit 35 rotates the substrate holding portion 20. The rotation drive unit 35 rotates the substrate holding portion 20 by rotating the rotation shaft 21. The rotation drive unit 35 includes a reduction mechanism and a motor, etc. The rotational movement of the motor is transmitted to the rotation shaft 21 via a reduction mechanism or the like.

[0019] The liquid supply unit 40 supplies a processing liquid to the lower surface of the substrate W held by the substrate holding portion 20. The processing liquid is a chemical solution such as an etching solution, for example. The liquid supply unit 40 may supply the processing liquid and a rinse liquid for removing the processing liquid from the substrate W to the lower surface of the substrate W held by the substrate holding portion 20 in this order. The rinse liquid is, for example, DIW (Deionized Water) or the like.

[0020] The liquid supply unit 40 includes a liquid supply source 41, a liquid supply pipe 42, and a flow rate adjustment mechanism 43. The liquid supply pipe 42 is provided on the lifting shaft 31 and the lifting plate 32. The liquid supply pipe 42 discharges the processing liquid or the rinse liquid from a supply port 44 formed at the upper end toward the lower surface of the substrate W. The processing liquid and the rinse liquid may be discharged from different supply ports 44. The flow rate adjustment mechanism 43 adjusts the flow rate of the processing liquid or the rinse liquid in the middle of the pipe that sends the processing liquid or the rinse liquid from the liquid supply source 41 to the liquid supply pipe 42. The flow rate adjustment mechanism 43 includes a flow rate adjustment valve and an on-off valve, etc.

[0021] The cover 50 faces the upper surface of the substrate W held by the substrate holding portion 20. The cover 50 is annular. An opening 51 that penetrates the cover 50 in the vertical direction is formed at the central portion of the cover

[50] . The diameter of the cover 50 is substantially the same as the diameter of the substrate W. Gas discharge ports 52A and 52B are provided in the cover 50. [[ID=十七]]

[0022] The gas outlets 52A and 52B are located outside the opening 51. The gas outlets 52A and 52B discharge gas toward the upper surface of the substrate W. The gas outlets 52A and 52B discharge gas directly downwards, but they may also discharge gas diagonally downwards. Specifically, the diagonal downward direction is one in which the gas slopes radially outward from the substrate W as it goes downwards. This makes it easier for the gas to flow radially outward from the substrate W.

[0023] Gas outlets 52A and 52B are provided at intervals in the radial direction of the substrate W. Hereinafter, gas outlet 52A may be referred to as the first gas outlet 52A, and gas outlet 52B as the second gas outlet 52B. The second gas outlet 52B is provided radially outward from the first gas outlet 52A on the substrate W. Multiple first gas outlets 52A and second gas outlets 52B are provided at equal intervals along the circumferential direction of the substrate W.

[0024] The cover 50 has gas passages 53A and 53B inside. Hereinafter, gas passage 53A may be referred to as the first gas passage 53A, and gas passage 53B may be referred to as the second gas passage 53B. A first gas outlet 52A is provided at the end of the first gas passage 53A, and a second gas outlet 52B is provided at the end of the second gas passage 53B.

[0025] The first gas channel 53A and the second gas channel 53B are arranged side by side in the radial direction of the substrate W. The second gas channel 53B is located radially outward from the first gas channel 53A on the substrate W. The first gas channel 53A and the second gas channel 53B are each bent by walls or the like. By providing walls, the contact area between the cover 50 and the gas can be increased, thereby improving the heating efficiency of the gas.

[0026] The gas supply unit 60 supplies gas to the cover 50. The gas supply unit 60 includes a gas supply source 61, gas piping 62, and a flow rate adjustment mechanism 63. The gas piping 62 carries gas from the gas supply source 61 to the cover 50. The flow rate adjustment mechanism 63 is installed in the middle of the gas piping 62 and adjusts the flow rate of the gas. The flow rate adjustment mechanism 63 includes a flow rate adjustment valve and an on / off valve. The flow rate adjustment mechanism 63 can independently adjust the flow rate of the first gas passage 53A and the flow rate of the second gas passage 53B.

[0027] The heater 70 is provided in the cover 50 and heats the gas. The heated gas is discharged onto the upper surface of the substrate W, and the substrate W is heated. The heater 70 is, for example, a sheathed heater. The heater 70 is provided inside the cover 50. The heater 70 is provided above the gas passages 53A and 53B, but may also be provided below, or on both the upper and lower sides.

[0028] The cover lifting unit 75 raises and lowers the cover 50 between a processing position (see Figure 1) located while the processing liquid is being supplied to the lower surface of the substrate W, and a standby position above the processing position. The cover lifting unit 75 includes an arm 76 that supports the cover 50 and an arm drive unit 77 that raises and lowers the arm 76. The arm drive unit 77 can also rotate the arm 76.

[0029] The recovery cup 80 recovers the processing liquid supplied to the substrate W. The recovery cup 80 is provided so as to cover the periphery of the base plate 22. The recovery cup 80 includes a first wall portion 81, a second wall portion 82, a top portion 83, and a bottom portion 84. The first wall portion 81 is formed in an annular shape. The first wall portion 81 is formed outside the base plate 22. The second wall portion 82 is formed in an annular shape. The second wall portion 82 is formed inside the first wall portion 81. The second wall portion 82 is formed so that the processing liquid does not flow inside the second wall portion 82, but flows outside the second wall portion 82.

[0030] The ceiling portion 83 is formed to protrude inward from the upper end of the first wall portion 81. An opening 85 is formed in the ceiling portion 83 that penetrates the ceiling portion 83 vertically. The opening 85 is circular in plan view. The diameter of the opening 85 is larger than the diameter of the substrate W and the diameter of the cover 50. The substrate W and the cover 50 can move up and down within the opening 85.

[0031] A drain pipe 86 and an exhaust pipe 87 are connected to the bottom 84. The drain pipe 86 discharges the processing liquid or rinsing liquid to the outside outside the second wall 82. The exhaust pipe 87 discharges gas to the outside inside the second wall 82. The exhaust pipe 87 is connected to an exhaust device 88. The exhaust device 88 includes a pump and the like.

[0032] The control unit 90 is, for example, a computer and comprises an arithmetic unit such as a CPU (Central Processing Unit) and a storage unit such as memory. The storage unit stores programs that control various processes performed in the substrate processing device 1. The control unit 90 controls the operation of the substrate processing device 1 by causing the arithmetic unit to execute the programs stored in the storage unit.

[0033] Next, with reference to Figure 2, an example of the flow of gas and processing liquid in the substrate processing apparatus 1 will be described. In the substrate processing apparatus 1, there is a risk that residue from the processing liquid L may adhere to the substrate W as particles. Therefore, the substrate processing apparatus 1 is equipped with an FFU 13. The FFU 13 suppresses the stirring up of particles by forming a downflow inside the processing container 10.

[0034] As a downflow is formed, gas flows into the central part of the substrate W from the opening 51 of the cover 50, and the swirling flow of the gas stabilizes in the gap between the substrate W and the cover 50. The swirling flow of the gas flows radially outward from the substrate W as it moves in the direction of the substrate W's rotation, discharging the particles beyond the substrate W.

[0035] Furthermore, the formation of a downflow allows gas to flow into the central part of the substrate W from the opening 51 of the cover 50, suppressing the generation of negative pressure in the central part of the substrate W. This prevents the central part of the substrate W from bending upward due to negative pressure, thereby suppressing contact between the substrate W and the cover 50.

[0036] However, the formation of a downflow may cause the temperature of the substrate W to decrease. The lower the temperature of the substrate W, the lower the processing speed (e.g., etching speed) of the processing solution L. In addition, the generation of a swirling gas flow may cause the temperature of the substrate W to vary in the radial direction. This variation in the temperature of the substrate W leads to variations in the processing speed.

[0037] The heater 70 is installed in the cover 50 and heats the gas. The heated gas is discharged onto the upper surface of the substrate W, heating the substrate W. This helps to suppress a decrease in processing speed. The heater 70 can also improve the uniformity of the temperature of the substrate W, thereby reducing variations in processing speed.

[0038] Next, a substrate processing method according to one embodiment will be described with reference to Figure 3. The substrate processing method has steps S101 to S105 shown in Figure 3. Steps S101 to S105 are carried out under the control of the control unit 90.

[0039] First, the transport device 2 loads the substrate W into the processing container 10 (step S101). The substrate W is then transferred from the transport device 2 to the substrate holding unit 20 by the substrate transfer unit 30. The loading of the substrate W is completed when the substrate holding unit 20 holds the substrate W.

[0040] After the substrate W has been loaded, the cover lifting unit 75 lowers the cover 50 from the standby position P2 to the processing position P1 (see Figure 4). Also, after the substrate W has been loaded, the rotary drive unit 35 rotates the substrate W together with the substrate holding unit 20.

[0041] Next, the liquid supply unit 40 supplies processing liquid L to the underside of the substrate W (step S102). The processing liquid L is supplied to the center of the underside of the rotating substrate W, flows radially outward due to centrifugal force, and spreads to wet the entire underside of the substrate W. After that, the liquid supply unit 40 stops supplying the processing liquid L.

[0042] Next, the liquid supply unit 40 supplies rinsing liquid to the underside of the substrate W (step S103). The rinsing liquid is supplied to the center of the underside of the rotating substrate W and flows radially outward due to centrifugal force, wetting and spreading across the entire underside of the substrate W while replacing the processing liquid L. After that, the liquid supply unit 40 stops supplying the rinsing liquid.

[0043] Next, the rotary drive unit 35 continues to rotate the substrate W together with the substrate holding unit 20 to dry the substrate W (step S104). After that, the rotary drive unit 35 stops the rotation of the substrate holding unit 20, and the substrate holding unit 20 releases its grip on the substrate W.

[0044] Next, the transport device 2 transports the substrate W into the processing container 10 (step S105). The substrate W is transferred from the substrate holding unit 20 to the transport device 2 by the substrate transfer unit 30, and then transported out by the transport device 2.

[0045] Hereinafter, the period from the completion of loading the nth (where n is an integer greater than or equal to 1)th substrate W to the start of loading the nth substrate W may be referred to as a process step. The process step is the period from when the substrate holding unit 20 starts holding the nth substrate W until it releases the nth substrate W.

[0046] Furthermore, periods other than the process stages may be referred to as the standby period. The standby period is the period from the start of unloading the nth substrate W to the completion of unloading the (n+1)th substrate W. The standby period may also be the period from power-on of the substrate processing device 1 to the completion of unloading the first substrate W.

[0047] Next, an example of the operating timing of the substrate processing apparatus 1 will be described with reference to Figure 4. As shown by the dashed line A in Figure 4, the control unit 90 controls the heater 70 to maintain the temperature at a first set temperature T1 during the standby process, and controls the heater 70 to maintain the temperature at a second set temperature T2 (T2 > T1) while the processing liquid L is being supplied. Since the substrate W is not processed during the standby process, there is no need to heat the substrate W. Power consumption can be reduced by reducing the output of the heater 70 during the standby process.

[0048] Furthermore, as shown by the dashed line A in Figure 4, the control unit 90 controls the heater 70 to raise its temperature from the first set temperature T1 to the second set temperature T2 by the time the substrate W is loaded, by increasing the output of the heater 70 during the waiting process. By completing the heating of the heater 70 by the time the substrate W is loaded, the supply of the processing liquid L to the underside of the substrate W can be quickly initiated, thereby suppressing a decrease in the processing efficiency of the substrate W.

[0049] The control unit 90 determines the timing to start raising the temperature of the heater 70 from the first set temperature T1 to the second set temperature T2 so that the time from the completion of heating the heater 70 to the completion of loading the substrate W is within the set time (preferably zero). The control unit 90 obtains the processing plan for the substrate W from the host computer or the like, and determines the timing of the completion of loading the substrate W by referring to that processing plan. Based on the timing of the completion of loading the substrate W, the control unit 90 determines the timing to start raising the temperature of the heater 70 from the first set temperature T1 to the second set temperature T2.

[0050] As shown by the dashed line B in Figure 4, the control unit 90 controls the heater 70 to lower its temperature from the second set temperature T2 by reducing the output of the heater 70 after the completion of the supply of the processing liquid L (including simultaneously with the completion of the supply of the processing liquid L) and before the start of the supply of the rinsing liquid (including simultaneously with the start of the supply of the rinsing liquid). It is preferable to maintain the output of the heater 70 at zero while the rinsing liquid is being supplied.

[0051] The rinsing solution removes the processing solution L from the substrate W. While the processing solution L reacts with the substrate W, the rinsing solution does not react with the substrate W. Therefore, there is no need to control the reaction rate of the rinsing solution. By reducing the output of the heater 70 after the supply of processing solution L is complete but before the supply of the rinsing solution begins, power consumption can be reduced while maintaining the processing quality of the substrate W.

[0052] Note that in Figure 4, there is a delay time between the completion of the supply of processing liquid L and the start of the supply of rinsing liquid, but this delay time is not required. The completion of the supply of processing liquid L, the start of the supply of rinsing liquid, and the reduction in the output of heater 70 may occur simultaneously.

[0053] As shown by the dashed line C in Figure 4, the control unit 90 controls the heater 70 to return its temperature to the first set temperature T1 by increasing the output of the heater 70 within a set time from the start of the standby process (preferably simultaneously with the start of the standby process). By returning the temperature of the heater 70, which has decreased during the supply of rinsing liquid, to the first set temperature T1, it is possible to raise it to the second set temperature T2 after a certain period of time, thus preparing for the loading of the next substrate W.

[0054] As shown by the dashed line D in Figure 4, the control unit 90 controls the gas discharge flow rate to maintain it at a first set flow rate F1 during the standby process, and controls it to maintain it at a second set flow rate F2 (F2 > F1) while the processing liquid L is being supplied. Since the substrate W is not processed during the standby process, there is no need to heat the substrate W. By reducing the gas discharge flow rate during the standby process, the amount of gas used can be reduced.

[0055] As shown by the dashed line D in Figure 4, the control unit 90 controls the gas discharge flow rate for heating the substrate W from the first set flow rate F1 to the second set flow rate F2 while raising the temperature of the heater 70 from the first set temperature T1 to the second set temperature T2. If the gas discharge flow rate fluctuates after the temperature of the heater 70 has stabilized, the temperature of the heater 70 may fluctuate. By increasing the gas discharge flow rate before the temperature of the heater 70 stabilizes, the temperature of the heater 70 can be stabilized in a short time.

[0056] As shown by the dashed line E in FIG. 4, the control unit 90 performs control to lower the cover 50 from the standby position P2 to the processing position P1 while maintaining the discharge flow rate of the gas at the second set flow rate F2. When the temperature of the heater 70 is stabilized, the cover 50 can discharge gas onto the upper surface of the substrate W, and the temperature of the substrate W can be easily stabilized at a desired temperature.

[0057] As shown by the dashed line F in FIG. 4, after the supply of the processing liquid L is completed and before the cover 50 is raised from the processing position P1 to the standby position P2 (preferably, before the supply of the rinse liquid is started), the control unit 90 performs control to reduce the discharge flow rate of the gas from the second set flow rate F2 to the first set flow rate F1. After the supply of the processing liquid L is completed, there is no need to heat the substrate W. By reducing the discharge flow rate of the gas after the supply of the processing liquid L is completed, the amount of gas used can be reduced.

[0058] Next, referring to FIG. 5, an example of control for raising the temperature of the heater 70 from temperatures Ta and Tb lower than the first set temperature T1 to the first set temperature T1 will be described. The control shown in FIG. 5 is performed, for example, during the period indicated by the dashed line C in FIG. 4. Alternatively, it is performed from the power-on of the substrate processing apparatus 1 until the loading of the first substrate W is completed.

[0059] As shown in FIG. 5, the control unit 90 controls the output of the heater 70 so as to raise the temperature at a constant temperature rise time set in advance regardless of the temperatures Ta and Tb (Ta < Tb) at the start of the temperature rise. When the temperature at the start of the temperature rise is high and the temperature is raised at the same temperature rise rate as when it is low, as shown by the dashed line in FIG. 5(B), the timing at which the temperature of the heater 70 reaches the first set temperature T1 is too early, and the power consumption of the heater 70 increases.

[0060] In the present embodiment, as described above, the control unit 90 controls the output of the heater 70 so as to raise the temperature at a constant temperature rise time set in advance regardless of the temperatures Ta and Tb (Ta < Tb) at the start of the temperature rise. Thereby, the timing at which the temperature of the heater 70 reaches the first set temperature T1 can be made constant, and the power consumption of the heater 70 can be reduced.

[0061] Next, referring to Figure 6, this is a cross-sectional view showing an example of changing the first set temperature T1. As shown in Figure 6, the control unit 90 controls the first set temperature T1 to decrease in stages as time progresses during the standby process. In other words, the control unit 90 controls the heater 70 to decrease in stages as time progresses during the standby process. Two or more (four in Figure 6) temperatures are prepared in advance as the first set temperature T1. When the standby process time is long, the output of the heater 70 can be reduced in stages, thereby reducing the power consumption of the heater 70.

[0062] Next, with reference to Figure 7, a substrate processing apparatus 1 according to the first modified example will be described. The differences between this modified example and the above embodiment will be mainly described below. Multiple heaters 70A and 70B are provided along the radial direction of the substrate W. Hereinafter, heater 70A may be referred to as the first heater 70A, and heater 70B may be referred to as the second heater 70B.

[0063] The second heater 70B is located radially outward from the substrate W compared to the first heater 70A. The first heater 70A heats the first gas flow path 53A. The second heater 70B heats the second gas flow path 53B. The control unit 90 can independently control the output of the first heater 70A and the output of the second heater 70B.

[0064] The control unit 90 can independently control the outputs of multiple heaters 70A and 70B. By independently controlling the outputs of multiple heaters 70A and 70B, the substrate W can be divided into multiple regions in the radial direction, and an appropriate amount of heat can be supplied to each region, thereby reducing power consumption. If power consumption is low, the number of heaters 70 can be as small as one.

[0065] Next, with reference to Figure 8, a substrate processing apparatus 1 according to the second modified example will be described. Below, the differences between this modified example and the first modified example described above will be mainly explained. In addition to the first gas outlet 52A and the second gas outlet 52B, the cover 50 has a third gas outlet 52C. The third gas outlet 52C is provided radially outward from the substrate W than the second gas outlet 52B, and multiple third gas outlets 52C are provided at equal intervals in the circumferential direction of the substrate W.

[0066] The third gas outlet 52C discharges gas diagonally downward toward the outer periphery of the substrate W. Specifically, the diagonal downward direction is one inclined radially outward toward the substrate W as it goes downward. By discharging gas diagonally downward toward the outer periphery of the substrate W, it is possible to suppress the processing liquid L from flowing around to the upper surface of the substrate W.

[0067] The cover 50 has a third gas channel 53C in addition to the first gas channel 53A and the second gas channel 53B. The third gas channel 53C is located radially outward from the substrate W than the second gas channel 53B. A third gas outlet 52C is provided at the end of the third gas channel 53C.

[0068] The substrate processing apparatus 1 includes a first heater 70A and a second heater 70B, as well as a third heater 70C. The third heater 70C is located radially outward from the substrate W compared to the second heater 70B. The third heater 70C heats the gas flowing through the third gas channel 53C.

[0069] The control unit 90 can independently control the outputs of the multiple heaters 70A, 70B, and 70C. By independently controlling the outputs of the multiple heaters 70A, 70B, and 70C, the substrate W can be divided into multiple regions in the radial direction, and an appropriate amount of heat can be supplied to each region, thereby reducing power consumption.

[0070] The embodiments of the substrate processing apparatus and substrate processing method described above have been explained, but the disclosure is not limited to the embodiments described above. Various changes, modifications, substitutions, additions, deletions, and combinations are possible within the scope of the claims. These also naturally fall within the technical scope of the disclosure. [Explanation of symbols]

[0071] 1. Substrate processing device 10 Processing containers 20 Board holding part 40 Liquid supply section 50 Covers 52A, 52B Gas outlet 60 Gas Supply Department 70 Heater 90 Control Unit W board

Claims

1. A processing container provided with an inlet and outlet for substrates, A substrate holding section that holds the substrate horizontally inside the processing container, A liquid supply unit that supplies processing liquid to the lower surface of the substrate held by the substrate holding unit, A cover provided with a gas outlet that discharges gas toward the upper surface of the substrate held by the substrate holding portion, A gas supply unit that supplies the gas to the cover, A heater is provided in the cover for heating the gas, Control unit and Equipped with, The control unit, During the supply of the processing liquid to the lower surface of the substrate, control is provided to maintain the heater temperature at a second set temperature higher than the first set temperature. During the waiting period from the start of unloading the substrate to the completion of unloading the next substrate, control is provided to maintain the heater temperature at the first set temperature. During the waiting process, the output of the heater is increased to raise the heater temperature from the first set temperature to the second set temperature by the time the next substrate is loaded. A substrate processing device that performs this function.

2. The liquid supply unit supplies the processing liquid and a rinsing liquid for removing the processing liquid from the substrate to the lower surface of the substrate held by the substrate holding unit, in this order. The substrate processing apparatus according to claim 1, wherein the control unit controls the heater to lower the heater temperature from the second set temperature by lowering the output of the heater after the completion of the supply of the processing liquid and before the start of the supply of the rinsing liquid.

3. The substrate processing apparatus according to claim 2, wherein the control unit controls the heater to return the heater temperature to a first set temperature by increasing the output of the heater within a set time from the start of the standby process.

4. The central part of the cover is provided with an opening that penetrates the cover vertically. The substrate processing apparatus according to any one of claims 1 to 3, wherein the substrate processing apparatus comprises a downflow forming section provided on the ceiling of the processing container.

5. The control unit, During the supply of the processing liquid to the lower surface of the substrate, control is provided to maintain the discharge flow rate of the gas at a second set flow rate that is greater than the first set flow rate. During the aforementioned waiting process, control is provided to maintain the gas discharge flow rate at the first set flow rate, Control to increase the gas discharge flow rate from the first set flow rate to the second set flow rate while raising the heater temperature from the first set temperature to the second set temperature, A substrate processing apparatus according to any one of claims 1 to 3, which performs the following:

6. The cover is provided with a lifting mechanism that raises and lowers it between a processing position located during the supply of the processing liquid to the lower surface of the substrate and a standby position located above the processing position. The substrate processing apparatus according to claim 5, wherein the control unit controls the lowering of the cover from the standby position to the processing position while maintaining the gas discharge flow rate at the second set flow rate.

7. The substrate processing apparatus according to claim 6, wherein the control unit controls the gas discharge flow rate to decrease from the second set flow rate to the first set flow rate after the supply of the processing liquid is completed and before the cover is raised from the processing position to the standby position.

8. The substrate processing apparatus according to any one of claims 1 to 3, wherein the control unit controls the output of the heater so as to raise the temperature of the heater from a temperature lower than the first set temperature to the first set temperature in a preset heating time.

9. The substrate processing apparatus according to any one of claims 1 to 3, wherein the control unit performs control to gradually lower the first set temperature in accordance with the passage of time during the standby process.

10. Multiple gas outlets are provided along the radial direction of the substrate. Multiple heaters are provided along the radial direction of the substrate. The substrate processing apparatus according to any one of claims 1 to 3, wherein the control unit independently controls the output of a plurality of heaters.

11. A substrate processing method comprising processing a substrate using a substrate processing apparatus, The substrate processing apparatus comprises a processing container provided with an inlet and outlet for the substrate, a substrate holding section for horizontally holding the substrate inside the processing container, a liquid supply section for supplying processing liquid to the lower surface of the substrate held by the substrate holding section, a cover provided with a gas outlet for discharging gas toward the upper surface of the substrate held by the substrate holding section, a gas supply section for supplying the gas to the cover, a heater provided in the cover for heating the gas, and a control section. The substrate processing method is During the supply of the processing liquid to the lower surface of the substrate, the heater temperature is maintained at a second set temperature higher than the first set temperature. During the waiting period from the start of unloading the substrate to the completion of unloading the next substrate, the heater temperature is maintained at the first set temperature. By increasing the output of the heater during the waiting process, the temperature of the heater is raised from the first set temperature to the second set temperature by the time the next substrate is loaded. A substrate processing method having the following characteristics.

12. The liquid supply unit supplies the processing liquid and a rinsing liquid for removing the processing liquid from the substrate to the lower surface of the substrate held by the substrate holding unit, in this order. The substrate processing method according to claim 11, further comprising lowering the output of the heater from the second set temperature by reducing the heater's output after the completion of supplying the processing liquid and before the start of supplying the rinsing liquid.

13. The substrate processing method according to claim 12, further comprising increasing the output of the heater within a set time from the start of the waiting process to return the heater temperature to the first set temperature.

14. The central part of the cover is provided with an opening that penetrates the cover vertically. The substrate processing method according to any one of claims 11 to 13, wherein the substrate processing apparatus comprises a downflow forming section provided on the ceiling of the processing container.

15. During the supply of the processing liquid to the lower surface of the substrate, the discharge flow rate of the gas is maintained at a second set flow rate that is greater than the first set flow rate. During the aforementioned waiting process, the discharge flow rate of the gas is maintained at the first set flow rate. While raising the heater temperature from the first set temperature to the second set temperature, the gas discharge flow rate is increased from the first set flow rate to the second set flow rate. A substrate processing method according to any one of claims 11 to 13, comprising:

16. The substrate processing apparatus includes a lifting mechanism that moves the cover up and down between a processing position located during the supply of the processing liquid to the lower surface of the substrate and a standby position located above the processing position. The substrate processing method according to claim 15, wherein the substrate processing method comprises lowering the cover from the standby position to the processing position while maintaining the gas discharge flow rate at the second set flow rate.

17. The substrate processing method according to claim 16, further comprising reducing the gas discharge flow rate from the second set flow rate to the first set flow rate after the completion of supply of the processing liquid and before raising the cover from the processing position to the standby position.

18. The substrate processing method according to any one of claims 11 to 13, further comprising controlling the output of the heater such that the temperature of the heater is raised from a temperature lower than the first set temperature to the first set temperature in a predetermined heating time.

19. The substrate processing method according to any one of claims 11 to 13, further comprising gradually lowering the first set temperature over time during the waiting step.

20. Multiple gas outlets are provided along the radial direction of the substrate. Multiple heaters are provided along the radial direction of the substrate. The substrate processing method according to any one of claims 11 to 13, wherein the substrate processing method comprises independently controlling the output of a plurality of heaters.

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