Apparatus and method for collecting substrates

Abstract

To provide a base material processing apparatus for processing a plurality of base materials.SOLUTION: The base material processing apparatus comprises: a first reactor constructed and arranged so as to process a rack having a plurality of base materials in the inside; a second reactor constructed and arranged so as to process the base materials; and a base material conveying device constructed and arranged so as to convey the base materials between the first and second reactors. An irradiation system constructed and arranged so as to irradiate the upper surface of at least one base material in the second reactor with ultraviolet of 100-500 nm may be provided in the second reactor.SELECTED DRAWING: Figure 1

Description

Technical Field

[0001] The present disclosure generally relates to a substrate processing apparatus for processing a plurality of substrates. More specifically, the present disclosure relates to a first reactor configured and arranged to process a rack having a plurality of substrates therein; a second reactor configured and arranged to process a substrate; and a substrate transfer device configured and arranged to transfer a substrate between the first reactor and the second reactor. The present disclosure relates to a substrate processing apparatus comprising the above components.

Background Art

[0002] A series of processing steps for depositing a layer on a substrate is called a recipe. Through subsequent deposition, doping, lithography, etching, and other processes, the layer becomes an integrated circuit, manufacturing tens to thousands, or even millions of integrated elements depending on the size of the substrate and the complexity of the circuit.

[0003] To ensure the high quality of the resulting deposited layer, various processing parameters are carefully controlled. One such important parameter is the substrate temperature during each recipe step. For example, during chemical vapor deposition (CVD), the deposition gas reacts and deposits on the substrate within a specific temperature window. Different temperatures result in different deposition rates and qualities. Therefore, it is important to accurately control the substrate temperature to bring the substrate to the desired temperature before the reaction process begins.

[0004]

[0005] ​However, the substrate may contain temperature-sensitive functional parts, and the temperature may be limited to a specific maximum value to avoid damage to these temperature-sensitive functional parts. This results in a contradictory requirement: the temperature must be high for productivity, quality, and / or reactivity, while at the same time, it must be kept low to avoid damage to the functional parts on the substrate.

[0006] By irradiating the top surface of the substrate with ultraviolet light, it may be possible to supply energy to the top surface for specific processes without heating the substrate. This energy may improve the quality of the deposited layer.

[0007] Because the deposition process can also deposit material into the irradiation system, potentially reducing UV transmission, it can be challenging to incorporate an irradiation system that is constructed and positioned to irradiate UV light within a furnace also used for the deposition process. [Overview of the Initiative] [Means for solving the problem]

[0008] This “Summary of the Invention” is provided to introduce the selected concepts in a simplified form. These concepts are described in more detail in the “Modes for Carrying Out the Invention” of the exemplary embodiments of this disclosure below. This Summary of the Invention is not intended to identify any major or essential features of the claimed subject matter, nor is it intended to be used to limit the scope of the claimed subject matter.

[0009] Depending on the purpose, it may be desirable to provide a substrate processing apparatus comprising: a first reactor constructed and arranged to process a rack having multiple substrates inside; a second reactor constructed and arranged to process substrates; and a substrate transport device constructed and arranged to transport substrates between the first and second reactors. The second reactor may be provided with an irradiation system constructed and arranged to irradiate the upper surface of at least one substrate in the second reactor with ultraviolet light in the range of 100 to 500 nanometers.

[0010] Energy may be supplied to the top surface by irradiating the substrate surface with ultraviolet light in a second reactor. While this energy is supplied, the risk of overheating the substrate is minimized. The energy can improve the quality of the deposited layer.

[0011] The irradiation system can be constructed and configured to irradiate with ultraviolet light in the range of 100 to 500 nanometers, preferably 150 to 400 nanometers, and more preferably 170 to 300 nanometers. The first reactor may have an inlet constructed and configured to supply a first precursor into the first reactor in order to deposit a layer on a substrate in a rack.

[0012] According to one embodiment, A process of supplying substrates into a rack having multiple substrates; Introducing a rack having multiple substrates into the first reactor; In order to deposit a layer on the substrate, a first precursor is supplied into the first reactor, Removing a rack containing multiple substrates from the first reactor; Transporting the substrate having the deposited layer to a second reactor; A method for treating a substrate can be provided, which includes irradiating a deposited layer of the substrate in a second reactor with ultraviolet light in the range of 100 to 500 nanometers.

[0013] For the purpose of summarizing the invention and its advantages achieved beyond the prior art, certain objectives and advantages of the invention are described above herein. Naturally, it should be understood that not all of these objectives or advantages are necessarily achieved by any particular embodiment of the invention. Therefore, those skilled in the art will recognize that the invention may be embodied or practiced in a manner that achieves or optimizes one or a group of advantages, for example, as taught or suggested herein, without necessarily achieving other objectives or advantages as may be taught or suggested herein.

[0014] All of these embodiments are intended to be within the scope of the invention disclosed herein. To those skilled in the art, these and other embodiments will be readily apparent from the embodiments for carrying out certain specific embodiments of the invention described below with reference to the accompanying drawings, and the invention is not limited to any specific embodiment disclosed.

[0015] Naturally, the elements in the figures are illustrative for simplification and clarity and are not necessarily drawn to actual size. For example, the dimensions of some of the elements in the figures may be exaggerated relative to others to help improve understanding of the illustrated embodiments of this disclosure. [Brief explanation of the drawing]

[0016] [Figure 1] Figure 1 is a schematic and partially exposed perspective view of a suitable apparatus for an irradiation system according to one embodiment. [Figure 2] Figure 2 is a schematic plan view of the apparatus shown in Figure 1. [Figure 3] Figure 3 is a plan view of a cross-section of a substrate rack equipped with a substrate to be irradiated by an irradiation system according to one embodiment. [Figure 4] Figure 4a shows an irradiation system formed in a helical shape according to one embodiment. Figure 4b shows a part of the gas emission lamp used in the irradiation system according to one embodiment. [Figure 5-1]Figures 5a to 5d are irradiation systems for transmitting radiation according to another embodiment. [Figure 5-2] The same as above. [Figure 6] Figure 6 is a schematic side view of a cross-section of a substrate processing apparatus according to another embodiment.

Embodiments for Carrying Out the Invention

[0017] Some embodiments and examples are disclosed below, but it will be understood by those skilled in the art that the present invention extends beyond the specifically disclosed embodiments and / or uses of the present invention, and their obvious modifications and equivalents. Therefore, it is intended that the scope of the disclosed present invention should not be limited by the specific disclosed embodiments described below.

[0018] An apparatus 1 suitable for an irradiation system according to one embodiment can be shown in FIGS. 1 and 2. The aforementioned apparatus 1 may include a housing 2 and may generally be partially or completely installed in a so-called "clean room". As can be seen particularly from FIG. 2, in addition to the housing 2, partition parts 3, 4 and 5 may exist. The housing 2 can partition the reaction region 21 with the partition part 3. The substrate handling chamber 22 may be partitioned between the housing 2 and the partition parts 3 and 4. The cassette handling chamber 23 may be partitioned between the partition parts 4 and 5 and the housing 2. The apparatus 1 may further include a cassette introduction portion 33.

[0019] The first and second reaction chambers 6 and 7 may be arranged in the reactor region 21. The reaction chambers can be arranged vertically, and a substrate rack shown as 12 filled with a substrate 13 can be moved vertically downward into the reaction chambers 6 and 7. To achieve this purpose, each reaction chamber may have a rack handler including an insertion arm 14 that can be moved vertically using a spindle 38. In the drawing of FIG. 1, only one insertion arm 14 is shown, but the apparatus may have two insertion arms 14 on both sides.

[0020] The substrate rack 12, although not shown in more detail, may include an insulating plug at the bottom, thereby providing a seal against the reaction chamber. The reaction chamber may be called a furnace and may include a heater for heating the substrate.

[0021] The rack handler may include a rotary platform 11 having a cutout 15 disposed within the reaction area 21. The cutout 15 may be formed such that the arm 14 can move up and down through the cutout when the cutout 15 is brought to the correct position. On the other hand, the diameter of the bottom of the substrate rack is such that when the arm 14 moves downward from the position shown in FIG. 1, the substrate rack 12 can be placed on the rotary platform 11 and removed from there again in the reverse operation, so that the diameter of the substrate rack is larger than the cutout 15 within the platform 11.

[0022] The substrate rack 12 may be supplied to both reaction chambers 6 and 7 using the rack handler. It is possible to perform a continuous process such that one rack is first processed in the first reactor and then in the second reactor. Also, it may be possible to exclusively process a parallel group of substrate racks by the reaction chamber 6 and exclusively process them by the reaction chamber 7. The substrate rack 12 may include a substrate 13.

[0023] The base material 13 can be supplied into the (transport) cassette 10, and the cassette can be placed in the storage section 8 from the introduction section 33 through the opening 34 using the arm 31 of the cassette handling robot 35. The arm 31 may be equipped with a seating surface 32 having dimensions slightly smaller than the dimensions of a series of cutouts 26 in the rotary platform 27. Several such rotary platforms may be provided vertically in the storage section 8. The arm 31 may be movable vertically using the cassette handling robot 35. The arm 31 may be mounted so that it can not only pick up or remove cassettes from the introduction section 33 to the storage section 8, or from the storage section 8 to the introduction section 33, but also move cassettes from the storage section 8 to the rotary platform 30, or from the rotary platform 30 to the storage section 8.

[0024] The rotary platform 30 may be constructed such that a cassette is placed in a partition 4 with an opening 37 formed when it rotates, and after the cassette is opened, a substrate can be removed one by one from the cassette using the arm 24 of the substrate handler and placed in a substrate rack 12 located in the substrate handling chamber 22. The substrate rack 12 is supported by a hinge arm 16 which is part of the rack handler, and has a seating surface 17 at its end, the dimensions of which are slightly smaller than the dimensions of the cutout 15 of the rotary platform 11. The arm 16 can move together with the substrate rack through the openable opening of the partition 3 by rotating around a point of rotation 18. A closure may be provided so that the opening 19 between the reaction area 21 and the substrate handling chamber 22 can be closed.

[0025] An operator or an automated cassette handling system (not shown) can fill the storage unit 8 by introducing several cassettes into the introduction section 33. Control operations can be performed from the panel 36. Cassettes 10 can be transported from the introduction section 33 to storage compartments 9 made for these cassettes within the storage unit 8 using the arm 31. Cassettes can be moved upward to higher compartments 9 in the storage unit 8 by a cassette handling robot 35, starting from the lowest position to remove the corresponding cassette 10 from the introduction section 33 through the opening 34. By rotating the storage unit 8, it is possible to fill various compartments 9 with cassettes 10.

[0026] The cassette 10 can be removed from the storage compartment by the arm 31 and placed on the rotary platform 30. The cassette is rotated on the rotary platform 30 and positioned with its doors pressed against the partition 4. The cassette doors can be removed with a door opener. The substrates can be removed one by one using the arm 24 and placed in the substrate rack 12, which is mounted on a swing arm 16 equipped with a substrate handler.

[0027] Meanwhile, the rotary platform 11 can move within the reaction area 21 in a manner optimal to the processing to be performed on the substrate present in the reaction area 21. After the substrate rack 12 is filled into the substrate handling chamber 22 and one of the reaction chambers 6 and 7 becomes available, the opening 19, which had been closed until this time, is opened, and the newly filled substrate rack 12 can be placed on the rotary platform 11. The rotary platform 11 then moves one position, and the filled substrate rack 12 can be removed from the platform 11 using the insertion arm 14 and moved into the reaction chambers 6 and 7. The processed substrate in the completed rack can be lowered onto the platform 11 where it is being filled. The substrate then moves in the reverse direction and finally enters the cassette.

[0028] A substrate rack 12 with new substrates may be supplied to a reaction chamber 6 or 7 using an insertion arm 14, and processed within the chamber. The processing may include raising the temperature of the substrates in the substrate rack 12 using a heater. Therefore, it is important to precisely control the temperature of the substrates to bring them to the desired temperature before the processing begins to yield appropriate reactivity and productivity.

[0029] The substrate may include a temperature-sensitive functional part, the temperature of which may be limited to a specific maximum value to avoid damage to the temperature-sensitive functional part. This can lead to conflicting requirements where the substrate temperature may be preferably high for reactivity, while at the same time, the substrate temperature may be preferably low to avoid damage to temperature-sensitive functional parts on the substrate.

[0030] Continuous processing is possible within reaction chambers 6 and 7. A substrate rack 12 having substrates processed in the first reactor 6 may be transported to a second reactor 7 for further processing. The second reactor 7 may include an irradiation system constructed and positioned to irradiate, for example, ultraviolet light in the range of 100 to 500 nanometers onto at least one upper surface of a substrate within the substrate rack from the side of the substrate rack. The irradiation system can be constructed and positioned to irradiate ultraviolet light in the range of 100 to 500 nanometers, preferably 150 to 400 nanometers, and more preferably 170 to 300 nanometers. Irradiating the upper surface of the substrate with ultraviolet light from the side may allow energy to be supplied to the upper surface for a specific process.

[0031] Energy can improve the reactivity on the surface. This improvement in reactivity can be achieved without overheating the substrate, and the temperature-sensing functional parts on the substrate are not damaged. Improved reactivity can lead to better quality of deposited layers and / or higher productivity of the equipment. It may also enable certain processes at temperatures that were previously impossible due to zero reactivity.

[0032] For example, the substrate processing apparatus may include a first reactor 6 constructed and arranged to process racks having multiple substrates, and a second reactor 7 constructed and arranged to process substrates. The apparatus may also include a substrate transport device 51 comprising racks and a substrate handler for transporting substrates between the first reactor 6 and the second reactor 7. The substrate handler may be used to transport the substrates to a substrate holder in the second reactor 7. The second reactor 7 may be provided with an irradiation system 41 constructed and arranged to irradiate the upper surface of at least one substrate in the second reactor 7 with ultraviolet light in the range of 100 to 500 nanometers.

[0033] The first reactor 6 may be provided with an inlet constructed and positioned to supply a first precursor into the first reactor 6 in order to deposit a layer on a substrate in the rack 12. The first precursor may contain silicon to deposit a silicon-containing layer on the substrate in the first reactor. For example, the first precursor may contain silicon halides, metal organosilicon, trisilane, disilane, or silane. The first precursor may contain a metal selected from aluminum, titanium, and hafnium, zirconium, and a metal-containing layer may be deposited on the substrate in the first reactor. For example, the first precursor may be TiCl4 or TMA.

[0034] The first reactor 6 may be equipped with an inlet constructed and positioned to supply a second precursor to a layer on the substrate in rack 12 within the first reactor 6, in order to react with the first precursor before the substrate is transported to the second reactor for irradiation. The second precursor may contain nitrogen to deposit a nitrogen-containing layer on the substrate in the first reactor. For example, the second reactor may contain NH3, N2H4. The second precursor may contain oxygen to deposit an oxide layer on the substrate in the first reactor. For example, the second precursor may contain H2O, O 3、 It may contain N2O and / or H2O2.

[0035] The first and second precursors can be deposited on a substrate in the first reactor by an atomic layer deposition process or a chemical vapor deposition process.

[0036] After the layers have been deposited, the racks may be moved downwards using a substrate transport device and transported from the first reactor 6 to the second reactor 7. The substrate processing apparatus may include a rack conveyor constructed and positioned to transport racks containing substrates horizontally from the first reactor 6 to the second reactor 7. The racks can be moved into the second reactor 7 using an elevator.

[0037] A second reactor 7 may be constructed and positioned to house a substrate rack within the reaction chamber. The second reactor may include an irradiation system constructed and positioned to irradiate the upper surface of at least one of the substrates in the substrate rack with ultraviolet light in the range of 100 to 500 nanometers. The irradiation system may irradiate the substrates from the sides of the substrate rack. The quality of the deposited layer can be improved by ultraviolet irradiation without overheating the substrates. After treatment with ultraviolet light, the substrates may be moved back and another layer deposited, and the deposition and irradiation cycle may be repeated. Once the layer is complete, the substrates can be transported out of the apparatus.

[0038] By providing a deposition process in the first reactor 6 and an irradiation system in the second reactor 7, the deposition process can be prevented from contaminating the irradiation system in the second reactor 7. Therefore, the transmission of ultraviolet irradiation in the second reactor 7 may remain substantially unchanged throughout the lifespan of the apparatus.

[0039] Figure 3 shows a cross-section of a substrate rack 12 having substrates 13 irradiated from four sides of the second reactor 7 in Figures 1 and 2, which is equipped with an irradiation system 41. The irradiation system 41 may comprise four components, such as tubes 43, to irradiate the substrates 13 with ultraviolet light from multiple sides. The irradiation system 41 may be configured to irradiate ultraviolet light in the range of 100 to 500 nanometers.

[0040] The tube 43 of the irradiation system 41 may be elongated and may extend perpendicular to the substrate surface. The tube 43 of the irradiation system 41 may extend over a portion of the rack 12, extend along the entire length of the rack 12, or extend a little further. The tube 43 of the irradiation system may have a length of 50 to 200 cm, preferably 75 to 150 cm, in order to irradiate the substrate along the entire length of the rack 12.

[0041] The irradiation system 41 for irradiating the substrate surface can have a power of 5W to 100kW, preferably 300W to 20kW, and more preferably 1 to 10kW. The irradiation system can have an efficiency of 50 to 90% in converting electrical energy to ultraviolet irradiation. The irradiation system can have a power output of 0.05 W to 1kW / cm, preferably 3 to 200W / cm, and most preferably 10 to 100W / cm in a direction perpendicular to the substrate.

[0042] The substrate surface has a radiation level of 0.1 to 200 milliwatts (mW) / cm². 2 Preferably 1 to 100 mW / cm² 2 More preferably, it can accept a power of 5 to 80 mW. The irradiation system can be constructed and arranged to irradiate ultraviolet light in the range of 100 to 500 nanometers, preferably 150 to 400 nanometers, and more preferably 170 to 300 nanometers. Rack 12 can have a length of 50 to 200 cm. The irradiation system may include an optical waveguide for guiding the radiation to the substrate. The optical waveguide can include an optical fiber. The irradiation device can be provided with a radiation reflecting surface to direct the ultraviolet light to the substrate.

[0043] A substrate 13 can be placed on a substrate rack 12 which may have three support columns, each having multiple spaced substrate holding sections configured to hold multiple substrates at intervals. The rack 12 may have up to 50 to 200, preferably 100 to 180, spaced substrate holding sections along the support columns in order to hold equal amounts of substrate.

[0044] For optimal manufacturing, the racks can be filled to their maximum capacity, but the number of substrates in the rack 12 may be less than the maximum to increase the power received on the substrates and to improve the uniformity of the irradiation received evenly across the surface of the substrates. For example, a rack may be provided with 10 to 80 substrates spaced apart. The distance between substrates in the rack may be 5 to 200, preferably 20 to 140, and most preferably 40 mm to 100 mm.

[0045] The support columns may be slender and may extend perpendicularly to the substrate surface. Multiple substrates may be arranged parallel to each other within the substrate rack 12. Depending on the configuration of the substrate rack 12 and the irradiation system 41, the irradiation 41 irradiates ultraviolet light onto at least one upper surface of the substrates within the substrate rack from the side of the substrate rack 12. As shown in the figure, the irradiation system may comprise four parts that irradiate the substrate with ultraviolet light from four sides. Irradiating from four sides can improve the uniformity of the irradiation received on the substrate. The irradiation system may also comprise one, two, three, or four parts that irradiate the substrate surface.

[0046] Ultraviolet irradiation can generate plasma in gases that can pass through it. This plasma may or may not be useful for the process taking place within the reaction chamber.

[0047] If plasma is not desired, the apparatus can be constructed and configured to suppress plasma within the second reaction chamber 7. The apparatus may also be constructed and configured to prevent plasma from propagating into the second reaction chamber 7. For example, by providing the apparatus with a plasma shield, such as conductive wiring or coating, the plasma can be suppressed or blocked before reaching the reaction chamber. The apparatus may also include a program, when run on the apparatus, to select gas, pressure range and / or power range so that plasma generation inside the second reaction chamber 7 can be suppressed.

[0048] Figure 4a shows an irradiation system 41 provided in a second reaction chamber 7 that is formed in a helical shape and can be used to irradiate the upper surface of the substrate. The helical irradiation system may be configured so as to surround the substrate rack 12 with the substrate 13. The irradiation system 41 may be a gas discharge lamp.

[0049] Figure 4b shows a part of a gas discharge lamp. A gas discharge lamp generates radiation by causing a discharge between two electrodes via an ionized gas, such as a plasma in a tube 43. Such a lamp may use noble gases, such as argon, neon, krypton, and xenon, or mixtures thereof, and furthermore, mercury, sodium, and metal halides may be used in the mixture in the tube 43. An electric field applied between the two electrodes, of which only one electrode 45 is depicted, can force electrons to be drawn from the gas atoms near the anode, leaving these atoms positively ionized. Free electrons flow to the anode, while positive ions flow to the cathode. Ions may collide with neutral gas atoms, which transfer their electrons to the ions. Atoms that lose electrons during a collision become ionized and accelerate toward the cathode, while ions that gain electrons during a collision transfer their energy to the upper surface of the substrate, releasing energy in the form of radiation that is radiated toward the upper surface of the substrate as they return to a lower energy state. The electrode 45 is connected to the tube 43 and attached to the base 47 on which the pin 49 is provided.

[0050] Figures 5a to 5d show an irradiation system according to another embodiment. Figure 5a shows a side view of an irradiation system 41 that controls the power to individually irradiate substrates 13 from the side along a vertical stack of substrates, comprising individually controllable radiation sources, such as light-emitting diodes. The irradiation system 41 for emitting an irradiation beam in the direction of the substrates 13 may be positioned on the side of the rack 12. The irradiation system 41 may irradiate the irradiation beam from the side downward toward the upper surface of the substrates 13. As shown here, the irradiation system irradiates only the top of the rack 12, but in some cases, the irradiation system 41 may extend along the entire length of the rack 12.

[0051] The angle of the irradiation beam can be 60 to 90°, preferably 80 to 89.5°, and more preferably 85 to 89°, with respect to a line perpendicular to the upper surface of the substrate 13. The irradiation beam of the irradiation system 41 may be slightly parallel. The direction of the irradiation beam of the irradiation system can therefore be defined as the average direction of the irradiation emitted by the irradiation system 41.

[0052] The apparatus may be equipped with a reflector (not shown) on the other side of the substrate rack relative to the irradiation system 41, which can reflect the irradiation returning to the substrate surface of the substrate 13. The reflector may be a retroreflector, which can reflect the irradiation beam back in the same direction from which it came. The reflector may include a material selected from the group of materials including glass, steel, aluminum, or polytetrafluoroethylene (PTFE), which can guide the radiation to the substrate.

[0053] The reflector may be equipped with a polarizer, which can change the polarization of the reflected light by 90° and improve the absorption of the reflected light. The polarizer may be a thin plate with a thickness of 1 / 8 of the wavelength, placed in front of the reflector.

[0054] The irradiation system may have first and second groups of individually controllable radiation sources 91 and 93. The first group of individually controllable radiation sources 91 may be directed towards the surface of the substrate 13 further away from the edge, and may have increased power output compared to the second group of individually controllable radiation sources 93 directed towards the upper surface near the edge of the substrate 13. The uniformity of the irradiation intensity on the substrate surface can thus be improved. When the irradiation intensity is uniform on the substrate surface, the improvement in reactivity on the substrate surface by the irradiation system 41 is similar, which is advantageous for process control.

[0055] As shown in the figure, the irradiation system 41 can directly irradiate the substrate 13, but the reaction chamber may also be restricted by a process tube between the irradiation system and the substrate 13. The process tube may form a barrier for handling gases and may function at least partially as a radiating surface. The irradiation system 41 may be provided outside the reaction chamber and may be constructed and positioned to irradiate ultraviolet light into the reaction chamber through the radiating surface. The process tube may protect the irradiation system 41 from the relaxation temperature and deposited product provided inside the reaction chamber.

[0056] Figure 5b shows a top view of the irradiation system in Figure 5a. If the irradiation system is provided from only one side, a portion of the substrate 13 may be directly irradiated. By equipping the device with a rotating mechanism and rotating the substrate in the direction indicated by arrow 95, it is possible to ensure that the substrate 13 is irradiated uniformly.

[0057] When the rack 12 moves upward within the reaction chambers 6, 7 (see Figures 1 and 2), an insulating plug may be provided at the bottom of the substrate rack 12 to provide a seal to the reaction chambers 6, 7. To improve the uniformity of irradiation by the irradiation system 41, the insulating plug may be provided with a (rack) rotator for rotating the rack 12, which is fitted with the substrate 13, around a vertical axis.

[0058] Rack rotating devices may be known from U.S. Patent No. 9,018,567 B2, which is incorporated herein by reference. The uniformity of the irradiation intensity on the substrate surface can thus be improved. When the irradiation intensity is uniform on the substrate surface, the improvement in reactivity on the substrate surface by the irradiation system 41 is similar, which is advantageous for process control.

[0059] Figure 5c illustrates potential problems in the apparatus, which uses an irradiation system 41 for irradiating the substrate 13 and includes a (rack) rotating device for rotating the rack 12 holding the substrate 13 around the vertical axis in Figure 5b. Irradiation from the irradiation system 41 may over-irradiate and heat a portion 12a of the substrate rack. Irradiation may also be dispersed from the substrate rack 12 through the periphery of the reaction chamber 6, which may irradiate parts of the apparatus that are not intended to be irradiated.

[0060] Figure 5d shows an irradiation system according to another embodiment that solves the problem of over-irradiating and / or heating a portion 12a of the substrate rack in Figure 5c. By rotating the substrate rack 12, a more uniform irradiation distribution and avoidance of overheating can be achieved.

[0061] Furthermore, using the shape of the substrate rack 12 and information on the rotational position of the rack 12 available from the control system, the power of a portion of the irradiation system 41 that hits the aforementioned portion 12a of the rack 12 can be stopped or limited. Thus, the amount of radiation received by the portion 12a of the substrate rack 12 is reduced, and less radiation may be scattered from the substrate rack 12 around support members that irradiate and heat parts of equipment that are not intended to be irradiated or heated.

[0062] The apparatus may also include a power control device 97 for controlling the output of the irradiation system 41, and the power control device may be programmed to adjust the irradiation output of the irradiation system 41 along the width of the substrate rack in order to avoid overheating of the substrate rack.

[0063] Figure 6 schematically shows a cross-sectional side view of a substrate processing apparatus having a first reactor 6 similar to the first reactor 6 and second reactor 7 of Figure 1. The second reactor 7 may be provided with a substrate holder 50 configured to hold a single substrate 13, and an irradiation system 41 constructed and positioned above the holder to irradiate the upper side of the substrate 13 within the holder 50. The irradiation system can irradiate the upper surface of at least one substrate in the second reactor with ultraviolet light in the range of 100 to 500 nanometers. The second reactor 7 may be provided with a plurality of substrate holders 50, for example five, each holder constructed and positioned to hold a single substrate 13 under the irradiation system 41.

[0064] The apparatus may include a substrate transport device 51 equipped with a substrate handler for transporting substrates between a first reactor 6 and a second reactor 7. The substrate handler may be constructed and positioned to transport substrates between spaced substrate holding sections of a rack configured to hold multiple substrates spaced apart. The first reactor 6 may be constructed and positioned to house a substrate rack within the first reactor 6. The substrate transport device 51 may include an elevator constructed and positioned to move the rack within the first reactor 6.

[0065] The substrate handler of the substrate transport device 51 may also be used to transport the substrate to the substrate holder 50 of the second reactor 7. In this case, a single substrate is transported to the substrate holder 50. The irradiation system 41 may include a radiation source (light-emitting diode, excimer light source (lamp or laser), mercury vapor lamp, laser) that irradiates ultraviolet light onto the upper surface of the substrate 13.

[0066] The substrate handler may be constructed and positioned to transport the substrate in a first direction toward the first reactor 6 and a second direction toward the second reactor 7. The first and second directions can form an angle of 90 to 180 degrees relative to each other. The substrate transport device may be provided in a substrate transport device chamber 53, which is provided with an inert space.

[0067] The substrate transport chamber is equipped with an inert space formation system, such as a nitrogen purging system, a vacuum evacuation system, or a low-oxygen system, to form an inert space within the substrate transport chamber 55. The inert space within the substrate transport chamber 53 prevents oxidation of the layer deposited on the substrate 13 in the first reactor 6 during transport to the second reactor 7 for treatment by the irradiation system 41.

[0068] The second reactor 7 may also be equipped with an inert space formation system, such as a nitrogen purging system, a vacuum evacuation system, or a low-oxygen system, to form an inert space within the second reactor for the same reasons.

[0069] The second reactor 7 may be provided with a cleaning inlet for supplying a cleaning gas (e.g., an etching reactant) into the second reactor to remove gas emission products within the second reactor or to prepare the substrate.

[0070] Using a substrate processing apparatus, the substrate can be processed by supplying substrates into a rack containing multiple substrates using a substrate transport device 51, and then introducing the rack containing multiple substrates into the first reactor 6. Subsequently, in order to deposit layers on the substrates, a first precursor, and optionally a second precursor, may be supplied to the first reactor.

[0071] The racks containing the processed substrates may be lowered from the first reactor 6 using the elevator of the substrate transport device 51. The substrates with the deposited layers may be transported from the racks to the substrate holders 50 of the second reactor 7 using the substrate handlers of the substrate transport device 51. The deposited layers of substrates on the substrate holders 50 in the second reactor 7 may be irradiated with ultraviolet light in the range of 100 to 500 nanometers.

[0072] To deposit another layer on the substrate 13, the irradiated substrate 13 can be transported again from the second reactor 7 to the first reactor 6 using the substrate transport device 51. After deposition, the substrate with the deposited layer may be transported again to the second reactor 7 for irradiation with ultraviolet light in the range of 100 to 500 nanometers. In this way, the thin layer of newly deposited material may be repeatedly treated with ultraviolet irradiation. The latter may be advantageous when the deposited material has limited transmittance to ultraviolet irradiation, making it difficult to improve the quality of the layer in the depth direction. When the substrate is ready, the substrate may be transported to the cassette 10 using the substrate transport device 51.

[0073] The first and second precursors can be supplied to the first reactor 6 and reacted with each other to form a layer on the substrate. The layer may be deposited by atomic layer deposition (ALD) or chemical vapor deposition (CVD) reaction. An ultraviolet irradiation system can be used to improve the quality of the layer deposited by atomic layer deposition (ALD) or chemical vapor deposition (CVD).

[0074] Before supplying the substrate to the first reactor 6 and depositing a layer on it, the substrate may be prepared by irradiating it with ultraviolet light in the range of 100 to 500 nanometers in the second reactor. The second reactor may be supplied with a cleaning gas (e.g., an etching reactant) to prepare the substrate.

[0075] To clean the radiating or reflective surfaces within the apparatus, the second reactor may require complementary, periodic in-situ cleaning using etching gases. The apparatus may include an etching system. The etching system may include a fluid reservoir, a control system, and valves. If performed on a control system, the control system may include a program to improve the transmittance of the radiating or reflective surfaces of the second reactor.

[0076] The etching solution may be stored in the fluid reservoir of the etching system. The control system may control a valve for supplying the etching solution into the reaction chamber 6. The control system can control the valve to supply the etching solution, i.e., the etchant, into the reaction chamber, thereby etching away layers deposited on the radiative or reflective surface and improving the surface transmittance.

[0077] The etching solution may be chlorine (Cl2), boron chloride (BCl3), hydrogen chloride (HCl), tetrafluoromethane (CF4), nitrogen trifluoride (NF3), hydrogen bromide (HBr), sulfur hexafluoride (SF6), fluorine (F2), chlorine trifluoride (CIF3), or a hydrogen or oxygen-containing gas, such as an ashing component produced by ultraviolet irradiation of a combination of hydrogen and oxygen.

[0078] The specific embodiments shown and described are illustrative of the present invention and its best mode, and are not intended to limit the scope of other aspects and embodiments in any way. In fact, for the sake of brevity, conventional manufacturing, association, preparation, and other functional aspects of the system may not be described in detail. Furthermore, the connecting lines shown in various figures are intended to represent exemplary functional relationships and / or physical connections between various elements. Many alternative or additional functional relationships or physical connections may exist in the actual system, and / or may not exist in some embodiments.

[0079] The configurations and / or methods described herein are illustrative in nature, and it should be understood that these particular embodiments or examples should not be considered restrictive, as numerous variations are possible. The specific routines or methods described herein may represent one or more of any number of processing strategies. Therefore, the various operations described herein may be performed in the illustrated sequence, in other sequences, or, in some cases, omitted.

[0080] The subject matter of this disclosure includes all novel and non-obvious combinations and partial combinations of the various processes, systems, and configurations disclosed herein, as well as other features, functions, operations, and / or characteristics, and any and all equivalents thereof.

[0081] While several embodiments and examples are disclosed herein, it will be understood by those skilled in the art that the present invention extends beyond the embodiments and / or uses of the present invention specifically disclosed, as well as their apparent modifications and equivalents. Therefore, the scope of the disclosed invention is not intended to be limited by the specific embodiments described herein. The figures shown herein are not meant to be actual diagrams of any particular material, structure, or device, but are merely idealized representations used to illustrate the embodiments of this disclosure.

[0082] As used herein, the terms “substrate” or “wafer” may refer to any substrate material on which a device, circuit, or film may be formed. The term “semiconductor device structure” may refer to any portion of a processed or partially processed semiconductor structure that includes, or defines, at least one portion of active or passive components of a semiconductor device formed on or within a semiconductor substrate. Examples of semiconductor device structures include active and passive components of integrated circuits, such as transistors, memory elements, transducers, capacitors, resistors, conductive wires, conductive vias, and conductive contact pads. [Explanation of Symbols]

[0083] 1 device 2 Housing 3, 4, 5 Partition section 6. First reaction chamber 7. Second reaction chamber 8 Storage compartments 9 storage compartments 10 cassettes 11 Rotary Platform 12 substrate racks 13 Base material 14 Insertion Arm 15 clippings 16 Arms 17 Seat 18 rotation points 19 Opening 21 Reactor region 22 PCB Handling Chamber 23 Cassette Handling Chambers 26 clippings 27 Rotary Platform 30 Rotary Platform 31 Arm 32 seat 33. Cassette introduction section 34 Openable and closable openings 35 Cassette Handling Robots 37 Opening 41 Irradiation System 43 tube 45 electrode 47 Base 49 pins 50 base material holder 51 Substrate conveying device

Claims

1. A substrate processing apparatus, A first reactor constructed and arranged to process racks having multiple substrates inside; A second reactor constructed and positioned to process the substrate; The system comprises a substrate transport device constructed and arranged to transport substrates between the first reactor and the second reactor, and the second reactor is provided with an irradiation system constructed and arranged to irradiate the upper surface of at least one substrate in the second reactor with ultraviolet light in the range of 100 to 500 nanometers. The second reactor is constructed and positioned to house the rack within a reaction chamber, and the irradiation system comprises at least three elongated irradiators constructed and positioned at intervals around the rack so as to surround the rack, when the rack is located within the second reactor, to irradiate ultraviolet light in the range of 100 to 500 nanometers onto the upper surface of at least one of the substrates in the rack from the side of the rack, each of the at least three elongated irradiators extending perpendicularly to the upper surfaces of the plurality of substrates and extending along the entire length of the rack to irradiate the substrates along the entire length of the rack. Each of the at least three elongated irradiators is positioned to generate an irradiation beam directed downward from the side of the rack toward one of the upper surfaces of the plurality of substrates, and the average direction of irradiation of the irradiation beam is at an angle in the range of 80° to 89.5° with respect to a line perpendicular to the upper surfaces of the plurality of substrates. A substrate processing apparatus wherein the irradiation output of at least one of the at least three elongated irradiators is adjusted along the width direction of the rack parallel to the upper surface of the substrate.

2. The substrate processing apparatus according to claim 1, wherein the first reactor comprises an inlet constructed and positioned to supply a first precursor into the first reactor in order to deposit a layer on the substrate in the rack.

3. The substrate conveying apparatus according to claim 1, wherein the substrate conveying device is constructed and arranged to convey a substrate between the first reactor and the second reactor.

4. The substrate handling apparatus according to claim 1, wherein the substrate transport device comprises a substrate handling robot constructed and positioned to transport a substrate between the first reactor and the second reactor.

5. The substrate processing apparatus according to claim 1, wherein the irradiator comprises a radiation source that irradiates ultraviolet light onto the upper surface.

6. The substrate handling robot is constructed and positioned to transport substrates between spaced substrate holding sections of a rack configured to hold multiple substrates spaced apart, The substrate processing apparatus according to claim 4, wherein the first reactor is constructed and arranged to house the rack within a reaction chamber.

7. The substrate conveying apparatus according to claim 1, further comprising an elevator constructed and positioned to move the rack in the first reactor.

8. The substrate processing apparatus according to claim 1, further comprising a rack conveyor constructed and arranged to horizontally transport racks having substrates from the first reactor to the second reactor.

9. The substrate processing apparatus according to claim 1, wherein the first reactor comprises a heater constructed and positioned to heat the plurality of substrates within the first reactor, and the inlet is connected to a first precursor supply source for depositing layers on the substrates.

10. The substrate processing apparatus according to claim 1, wherein the inlet is constructed and arranged to be connected to a source of nitrogen-containing precursor for depositing a nitrogen-containing layer on the substrate.

11. The substrate handling robot is constructed and positioned to transport the substrate in a first direction toward the first reactor and in a second direction toward the second reactor, wherein the first and second directions form an angle of 90 to 180 degrees relative to each other, as described in claim 1.

12. The substrate conveying apparatus according to claim 2, wherein the substrate conveying apparatus is provided in a substrate conveying apparatus chamber, and the apparatus comprises an inert space forming system for forming an inert space in a second reactor within the substrate conveying apparatus chamber.

13. The substrate processing apparatus according to claim 1, wherein the second reactor is provided with an inert space forming system for forming an inert space within the second reactor.

14. The substrate processing apparatus according to claim 1, wherein the second reactor is provided with a cleaning inlet for supplying a cleaning gas into the second reactor to remove gas emission products in the second reactor or to prepare the substrate.

15. A method for processing a substrate, A process of supplying substrates into a rack having multiple substrates; Introducing the rack having multiple substrates into the first reactor; In order to deposit a layer on the substrate, a first precursor is supplied into the first reactor; Removing the rack having multiple substrates from the first reactor; The substrate having the deposited layer is transported to a second reactor constructed and positioned to house the rack within the reaction chamber; The method includes irradiating the deposited layer of the substrate in the second reactor with ultraviolet light in the range of 100 to 500 nanometers from the side of the rack onto the upper surface of at least one of the substrates in the rack, using at least three elongated irradiators constructed and positioned at intervals around the periphery of the rack so as to surround the rack when the rack is located in the second reactor; Each of the at least three elongated irradiators extends perpendicularly to the upper surfaces of the plurality of substrates and extends along the entire length of the rack, irradiating the substrates along the entire length of the rack. Each of the at least three elongated irradiators is positioned to generate an irradiation beam directed downward from the side of the rack toward one of the upper surfaces of the plurality of substrates, and the average direction of irradiation of the irradiation beam is at an angle in the range of 80° to 89.5° with respect to a line perpendicular to the upper surfaces of the plurality of substrates. A method for processing a substrate, wherein the irradiation output of at least one of the at least three elongated irradiators is adjusted along the width direction of the rack parallel to the upper surface of the substrate.

16. The aforementioned method, The irradiated substrate is transported from the second reactor to the first reactor; The first precursor is supplied to the first reactor to deposit another layer on the substrate; Transporting a substrate having another deposited layer to the second reactor; The method according to claim 15, further comprising: irradiating the other deposited layer of the substrate in the second reactor with ultraviolet light in the range of 100 to 500 nanometers.

17. The aforementioned method, The method according to claim 16, further comprising supplying a second precursor to the first reactor and reacting it with the first precursor to form the layer on the substrate.

18. The method according to claim 17, wherein the first precursor contains silicon to deposit a silicon-containing layer on the substrate in the first reactor.

19. The method according to claim 17, wherein the second precursor contains nitrogen to deposit a nitrogen-containing layer on the substrate in the first reactor.

20. The method according to claim 17, wherein the second precursor contains oxygen to deposit an oxide layer on the substrate in the first reactor.

21. The method according to claim 17, wherein the first and second precursors are deposited on the substrate using an atomic layer deposition process.

22. The method according to claim 17, wherein the first and second precursors are deposited on the substrate using a chemical vapor deposition process.

23. The method according to claim 17, wherein the first precursor comprises a metal selected from the group consisting of aluminum, titanium, hafnium, and zirconium, and a metal-containing layer is deposited on a substrate in the first reactor.

24. The method according to claim 17, wherein, before supplying the substrate into the first reactor, the substrate is transported to the second reactor to deposit a layer on the substrate, and the substrate is prepared by irradiating it with ultraviolet light in the range of 100 to 500 nanometers in the second reactor.

25. The method according to claim 24, wherein a cleaning gas is supplied to the second reactor to prepare the substrate.

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