Shunt resistor and method for manufacturing a shunt resistor

Abstract

To provide a shunt resistor capable of satisfying a desired TCR.SOLUTION: A shunt resistor 1 includes electrodes 6, 7 connected to both ends of a resistor 5. The electrodes 6, 7 include main-flow electrode parts 6A, 7A and shunt-flow electrode parts 6B, 7B. Voltage detection terminals 15A, 15B are provided in the shunt-flow electrode parts 6B, 7B.SELECTED DRAWING: Figure 1

Description

Technical Field

[0001] The present invention relates to a shunt resistor, a method for manufacturing a shunt resistor, and a method for adjusting the characteristics of a shunt resistor.

Background Art

[0002] Conventionally, shunt resistors have been widely used for current detection applications. Such a shunt resistor includes a plate-shaped resistor body and plate-shaped electrodes joined to both ends of the resistor body. Such a resistor body is made of an alloy such as a copper-nickel alloy, a copper-manganese alloy, an iron-chromium alloy, or a nickel-chromium alloy, and such electrodes are made of a highly conductive metal such as copper.

Prior Art Documents

Patent Documents

[0003]

Patent Document 1

Summary of the Invention

Problems to be Solved by the Invention

[0004] [[ID=3)F]]In such a shunt resistor, in order to enable current detection with little influence of temperature variation, it is required that the temperature coefficient of resistance (TCR) be as close to 0 as possible. The temperature coefficient of resistance (TCR) is an index indicating the ratio of the change in resistance value due to a temperature change, and the closer the TCR is to 0, the smaller the change in resistance value. In order to improve the TCR of a shunt resistor, for example, an alloy with a small TCR such as manganin (registered trademark) is used as the material of the resistor body. However, there are limitations to the adjustment (improvement) of TCR by the selection of the resistor body material.

[0005] Therefore, an object of the present invention is to provide a shunt resistor capable of easily adjusting the TCR, that is, satisfying a desired TCR.

[0006] The present invention aims to provide a method for manufacturing a shunt resistor that can satisfy a desired TCR.

[0007] A reference example The objective is to provide a method for tuning the characteristics of a shunt resistor so that a desired TCR can be achieved. [Means for solving the problem]

[0008] In one embodiment, a shunt resistor is provided, which is used for current detection and comprises a resistor and electrodes connected to both ends of the resistor. The electrodes comprise a main electrode portion connected to the resistor and a divert electrode portion having a higher resistance than the main electrode portion, branching off from the main electrode portion and connected to the resistor, with a voltage detection terminal provided on the divert electrode portion.

[0009] In one embodiment, the voltage detection terminal is provided along the connection between the resistor and the current diversion electrode. In one embodiment, the shunt resistor has a gap formed between the main electrode portion and the diversion electrode portion. In one embodiment, the shunt resistor has a recess formed in the current-dividing electrode portion.

[0010] In one embodiment, a method for manufacturing a shunt resistor is provided, comprising a resistor and electrodes connected to both ends of the resistor. The method for manufacturing a shunt resistor includes the step of forming a gap in the electrodes to form a main electrode portion connected to the resistor and a diversion electrode portion having a higher resistance value than the main electrode portion, branching off from the main electrode portion, and connected to the resistor, and adjusting the resistance-temperature characteristics by the shape and size of the gap.

[0011] In one embodiment, a method for manufacturing a shunt resistor is provided, comprising a resistor and electrodes connected to both ends of the resistor. The method for manufacturing a shunt resistor comprises the steps of: forming a main electrode section connected to the resistor; forming a voltage detection terminal spaced apart from the electrodes and connected to the resistor; and forming a current-dividing electrode section branched off from the main electrode section. The step of forming the current-dividing electrode section involves electrically connecting the electrodes and the voltage detection terminal using an electrode bar, and adjusting the resistance-temperature characteristics by the cross-sectional area, length, and material of the electrode bar.

[0012] In one embodiment, the resistance-temperature characteristics are adjusted by the position of the current-splitting electrode. In one embodiment, the method includes a recess formation step in which a recess is formed in the current-dividing electrode portion, and the resistance-temperature characteristics are adjusted by the depth of the recess.

[0013] In one embodiment, a method for adjusting the characteristics of a shunt resistor is provided, comprising: a resistor; a main electrode portion connected to the resistor; a diversion electrode portion having a higher resistance value than the main electrode portion, branching off from the main electrode portion and connected to the resistor; electrodes connected to both ends of the resistor; and a voltage detection terminal provided on the side of the diversion electrode portion connected to the resistor. When the path of current flowing between the main electrode portion and the resistor is defined as the main path, and the path of current flowing between the diversion electrode portion and the resistor is defined as the diversion path, the resistance component of the main path is composed of the resistance component R2 in the main electrode portion and the resistance component R4 of the main resistor in the resistor adjacent to the main electrode portion in series (R2 + R4), and the resistance component of the diversion path is composed of the resistance component R1 in the diversion electrode portion and in the resistor adjacent to the diversion electrode portion The shunt resistor is composed of the resistive component R3 of the shunt resistor and a series (R1+R3), and the resistive component of the shunt resistor is composed of the resistive component of the main path (R2+R4) and the resistive component of the shunt path (R1+R3) in parallel ((R2+R4)×(R1+R3) / (R2+R4)+(R1+R3)). If the voltage across the resistive component R3 is defined as the detection voltage V3, the temperature characteristics of the detection voltage V3 are adjusted by changing the resistance value of the resistive component R1. [Effects of the Invention]

[0014] Because shunt resistors are equipped with a current-dividing electrode section, they can achieve a temperature coefficient of resistance (TCR) close to zero. [Brief explanation of the drawing]

[0015] [Figure 1] Figure 1(a) shows one embodiment of a shunt resistor, and Figure 1(b) is an enlarged view showing the area enclosed by the dotted line in Figure 1(a). [Figure 2] Figure 2(a) shows another embodiment of the shunt resistor, Figure 2(b) is a magnified view of the area enclosed by the dotted line in Figure 2(a), and Figure 2(c) is a graph showing the rate of change of the resistance value of the shunt resistor shown in Figure 2(a). [Figure 3] Figure 3(a) shows another embodiment of the shunt resistor, Figure 3(b) is a magnified view of the area enclosed by the dotted line in Figure 3(a), and Figure 3(c) is a graph showing the rate of change of the resistance value of the shunt resistor shown in Figure 3(a). [Figure 4] Figure 4(a) shows another embodiment of the shunt resistor, Figure 4(b) is a magnified view of the area enclosed by the dotted line in Figure 4(a), and Figure 4(c) is a graph showing the rate of change of the resistance value of the shunt resistor shown in Figure 4(a). [Figure 5] Figure 5(a) shows another embodiment of the shunt resistor, Figure 5(b) is an enlarged view showing the area enclosed by the dotted line in Figure 5(a), and Figure 5(c) is a graph showing the rate of change of the resistance value of the shunt resistor shown in Figure 5(a). [Figure 6] Figure 6(a) shows another embodiment of the shunt resistor, Figure 6(b) is a magnified view of the area enclosed by the dotted line in Figure 6(a), Figure 6(c) is a graph showing the rate of change of the resistance value of the shunt resistor shown in Figure 6(a), and Figure 6(d) is a diagram showing the frequency characteristics of the current density in the shunt resistor shown in Figure 6(a). [Figure 7]FIG. 7(a) is a diagram showing another embodiment of the shunt resistor, FIG. 7(b) is an enlarged view showing the region surrounded by the dotted line in FIG. 7(a), and FIG. 7(c) is a graph showing the rate of change of the resistance value of the shunt resistor shown in FIG. 7(a). [Figure 8] It is a diagram showing a state where the electrode bar is attached to the voltage detection terminal. [Figure 9] FIG. 9(a) is a diagram showing another embodiment of the shunt resistor, FIG. 9(b) is an enlarged view showing the region surrounded by the dotted line in FIG. 9(a), and FIG. 9(c) is a graph showing the rate of change of the resistance value of the shunt resistor shown in FIG. 9(a). [Figure 10] FIG. 10(a) is a diagram showing another embodiment of the shunt resistor, FIG. 10(b) is an enlarged view showing the region surrounded by the dotted line in FIG. 10(a), and FIG. 10(c) is a graph showing the rate of change of the resistance value of the shunt resistor shown in FIG. 10(a). [Figure 11] FIG. 11(a) is a diagram showing another embodiment of the shunt resistor, FIG. 11(b) is an enlarged view showing the region surrounded by the dotted line in FIG. 11(a), and FIG. 11(c) is a graph showing the rate of change of the resistance value of the shunt resistor shown in FIG. 11(a). [Figure 12] FIG. 12(a) is a diagram showing another embodiment of the shunt resistor, FIG. 12(b) is an enlarged view showing the region surrounded by the dotted line in FIG. 12(a), and FIG. 12(c) is a graph showing the rate of change of the resistance value of the shunt resistor shown in FIG. 12(a). [Figure 13] FIG. 13(a) is a diagram showing another embodiment of the shunt resistor, FIG. 13(b) is a diagram when the shunt resistor shown in FIG. 13(a) is viewed from an angle different from the angle shown in FIG. 13(a), and FIG. 13(c) is a graph showing the rate of change of the resistance value of the shunt resistor shown in FIG. 13(a). [Figure 14] It is a diagram showing an embodiment of a method for manufacturing a shunt resistor. [Figure 15] It is a diagram showing another embodiment of a method for manufacturing a shunt resistor. [Figure 16] It is a diagram for explaining a method for adjusting the characteristics of a shunt resistor. [Figure 17] This is a diagram to illustrate the comparative example. [Figure 18] This table shows the definitions of numerical values ​​related to the characteristic adjustment method for shunt resistors. [Figure 19] This table shows an example of numerical values ​​related to the characteristic adjustment method for shunt resistors. [Figure 20] This figure shows another embodiment of the shunt resistor. [Modes for carrying out the invention]

[0016] Embodiments of the present invention will now be described with reference to the drawings. Figure 1(a) shows one embodiment of a shunt resistor, and Figure 1(b) is an enlarged view showing the area enclosed by the dotted line in Figure 1(a). The shunt resistor 1 used for current detection comprises a resistor 5 and electrodes 6 and 7 made of highly conductive metal connected to both ends of the resistor 5.

[0017] Examples of alloys that make up the resistor 5 include metals with higher electrical resistivity than electrodes 6 and 7, such as manganin (registered trademark) and nickel-chromium alloys. An example of a highly conductive metal that makes up electrodes 6 and 7 is copper, which has a very large positive temperature coefficient of resistance as a material property. Electrodes 6 and 7 each have bolt holes 8A and 8B, respectively, for connecting the shunt resistor 1 to the path through which the current to be detected flows.

[0018] Electrodes 6 and 7 are arranged symmetrically with respect to the resistor 5. Electrodes 6, resistor 5, and electrode 7 are connected in this order along the longitudinal direction (i.e., the direction of current flow) of the shunt resistor 1. Electrode 6 is connected to end face 10A of resistor 5, and electrode 7 is connected to end face 10B of resistor 5. End faces 10A and 10B extend in the width direction of the shunt resistor 1, perpendicular to the longitudinal direction.

[0019] Electrodes 6 and 7 have the same structure. More specifically, electrode 6 includes a main electrode section 6A that branches off from electrode 6 and connects to the resistor 5, and a divert electrode section 6B that has a higher resistance than the main electrode section 6A, branches off from electrode 6, and connects to the resistor 5. Similarly, electrode 7 includes a main electrode section 7A that branches off from electrode 7 and connects to the resistor 5, and a divert electrode section 7B that has a higher resistance than the main electrode section 7A, branches off from electrode 7, and connects to the resistor 5.

[0020] Shunt resistor 1 has gaps (slits) 11A, 11B formed between the main electrode section 6A and the diversion electrode section 6B. Similarly, shunt resistor 1 has gaps (slits) 12A, 12B formed between the main electrode section 7A and the diversion electrode section 7B. In other words, the diversion electrode section 6B is located between the gaps 11A, 11B, and the diversion electrode section 7B is located between the gaps 12A, 12B. By forming the gaps 11A, 11B, the diversion electrode section 6B is separated from the main electrode section 6A and connected independently to the resistor 5. Similarly, by forming the gaps 12A, 12B, the diversion electrode section 7B is separated from the main electrode section 7A and connected independently to the resistor 5.

[0021] The gaps 11A, 11B and 12A, 12B are arranged symmetrically with respect to the resistor 5 and have the same structure as each other. The gaps 11A, 11B and 12A, 12B extend along the longitudinal direction of the shunt resistor 1. The gaps 11A, 11B are adjacent to the end face 10A of the resistor 5, and the gaps 12A, 12B are adjacent to the end face 10B of the resistor 5.

[0022] As shown in Figure 1(b), the shunt resistor 1 has a voltage detection terminal 15A provided on the shunt electrode section 6B and a voltage detection terminal 15B provided on the shunt electrode section 7B. These voltage detection terminals 15A and 15B are arranged symmetrically with respect to the resistor 5 and are connected to the resistor 5.

[0023] Voltage detection terminals 15A and 15B are provided along the connection points (i.e., end faces 10A and 10B) between the resistor 5 and the shunt electrode sections 6B and 7B. Voltage detection terminals 15A and 15B are terminals for measuring the voltage between the connection points between the resistor 5 and the shunt electrode sections 6B and 7B. For example, by connecting aluminum wires to the terminal outputs of voltage detection terminals 15A and 15B, the voltage between the connection points between the resistor 5 and the shunt electrode sections 6B and 7B can be detected.

[0024] Other embodiments of the shunt resistor 1 will be described below with reference to the drawings. In the embodiments shown below, the detailed structure of the electrodes 6 (i.e., the main electrode section 6A and the branch electrode section 6B) will be described. Since the electrodes 7 (i.e., the main electrode section 7A and the branch electrode section 7B) have the same structure as electrodes 6, the description and illustration of electrodes 7 will be omitted.

[0025] Figure 2(a) shows another embodiment of the shunt resistor, Figure 2(b) is a magnified view of the area enclosed by the dotted line in Figure 2(a), and Figure 2(c) is a graph showing the rate of change of the resistance value of the shunt resistor shown in Figure 2(a).

[0026] As shown in Figure 2(a), the shunt resistor 1 has end faces 20A and 20B extending in the longitudinal direction of the shunt resistor 1. In the embodiment shown in Figure 2(a), the shunt electrode portion 6B is arranged along the end face 20A of the shunt resistor 1 and is separated from the main electrode portion 6A by a single gap 11. In one embodiment, the shunt electrode portion 6B may be arranged along the end face 20B of the shunt resistor 1.

[0027] The shunt resistor 1 has a recess 16 formed in the shunt electrode portion 6B. The recess 16 is connected to the voltage detection terminal 15A and has a thickness D that is thinner than the thickness of the main electrode portion 6A and the voltage detection terminal 15A. In this embodiment, the thickness of the main electrode portion 6A and the voltage detection terminal 15A is thicker than the thickness of the resistor 5, and the thickness of the recess 16 is thinner than the thickness of the resistor 5. The thickness of the main electrode portion 6A and the thickness of the voltage detection terminal 15A are the same.

[0028] In Figure 2(c), the horizontal axis represents temperature, and the vertical axis represents the rate of change in resistance. Curve T1 in Figure 2(c) shows the rate of change in the resistance of the shunt resistor 1 due to temperature change when voltage is measured at voltage detection terminal 15A and voltage detection terminal 15B (omitted in Figures 2(a) and 2(b)), and curve T2 shows the rate of change in the resistance of the shunt resistor 1 due to temperature change when voltage is measured at the main electrode section 6A and main current section 7A (omitted in Figures 2(a) and 2(b)).

[0029] As is clear from comparing the range of variation in the rate of change of resistance along curve T1 and along curve T2, by providing the shunt electrode section 6B, the range of variation in the rate of change of resistance due to temperature changes can be significantly reduced. In particular, the shunt electrode sections 6B and 7B (omitted in Figures 2(a) and 2(b)) are in a region where the shunted current decreases with increasing temperature (negative temperature characteristics of the current), and even if the resistor 5 is made of a material with a positive temperature coefficient of resistance, the voltage increase due to temperature rise between the voltage detection terminal 15A and the voltage detection terminal 15B (omitted in Figures 2(a) and 2(b)) can be suppressed. Therefore, the shunt resistor 1 equipped with shunt electrode sections 6B and 7B (omitted in Figures 2(a) and 2(b)) can achieve a temperature coefficient of resistance (TCR) close to zero.

[0030] The temperature coefficient of resistance of the shunt resistor 1 depends on the length L1 and thickness D (i.e., the depth of the recess 16) of the recess 16, the length L2 of the voltage detection terminal 15A, and the width W of the shunt electrode section 6B (i.e., the recess 16 and the voltage detection terminal 15A). In other words, the temperature coefficient of resistance of the shunt resistor 1 depends on the resistance value of the shunt electrode section 6B. Therefore, the temperature coefficient of resistance (in other words, the temperature characteristics of resistance) of the shunt resistor 1 can be adjusted by adjusting at least one of the lengths L1, L2, thickness D, and width W. In other words, the temperature coefficient of resistance (in other words, the temperature characteristics of resistance) of the shunt resistor 1 can be adjusted by adjusting the resistance value of the shunt electrode section 6B.

[0031] Figure 3(a) shows another embodiment of the shunt resistor, Figure 3(b) is an enlarged view showing the area enclosed by the dotted line in Figure 3(a), and Figure 3(c) is a graph showing the rate of change of the resistance value of the shunt resistor shown in Figure 3(a). In the embodiment shown in Figure 3(a), the shunt electrode 6B is not arranged along the end face 20A, but is arranged closer to the end face 20A than to the end face 20B. In one embodiment, the shunt electrode 6B may be arranged closer to the end face 20B than to the end face 20A. As shown in Figure 3(c), in this embodiment as well, the shunt resistor 1 can significantly reduce the range of fluctuation in the rate of change of the resistance value due to temperature changes, and the temperature coefficient of resistance (TCR) can be brought closer to 0.

[0032] Figure 4(a) shows another embodiment of the shunt resistor, Figure 4(b) is an enlarged view showing the area enclosed by the dotted line in Figure 4(a), and Figure 4(c) is a graph showing the rate of change of the resistance value of the shunt resistor shown in Figure 4(a). In the embodiment shown in Figure 4(a), the current division electrode 6B is located in the center of the electrode 6 in the width direction of the shunt resistor 1. As shown in Figure 4(c), in this embodiment as well, the shunt resistor 1 can significantly reduce the range of fluctuation in the rate of change of resistance value due to temperature changes, and the temperature coefficient of resistance (TCR) can be brought close to 0.

[0033] In this embodiment, by positioning the current-splitting electrode 6B in the center of electrode 6, the position of the terminal outlet of the voltage detection terminal 15A becomes clear. Furthermore, since an averaged, uniform potential appears on the surface of the voltage detection terminal 15A, deterioration of the resistance temperature characteristics caused by misalignment of the terminal outlet can be avoided.

[0034] Figure 5(a) shows another embodiment of the shunt resistor, Figure 5(b) is an enlarged view showing the area enclosed by the dotted line in Figure 5(a), and Figure 5(c) is a graph showing the rate of change of the resistance value of the shunt resistor shown in Figure 5(a). In the embodiment shown in Figure 5(a), the current division electrode 6B is located in the center of the electrode 6 in the width direction of the shunt resistor 1.

[0035] As shown in Figure 5(b), the length L1 and thickness D of the recess 16, the length L2 of the voltage detection terminal 15A, and the width W of the shunt electrode portion 6B are different from the lengths L1, L2, thickness D, and width W shown in Figure 4(b). As shown in Figure 5(c), in this embodiment as well, the shunt resistor 1 can significantly reduce the range of fluctuation in the rate of change of resistance due to temperature changes, and the temperature coefficient of resistance (TCR) can be brought closer to 0.

[0036] Figure 6(a) shows another embodiment of the shunt resistor, Figure 6(b) is an enlarged view showing the area enclosed by the dotted line in Figure 6(a), Figure 6(c) is a graph showing the rate of change of the resistance value of the shunt resistor shown in Figure 6(a), and Figure 6(d) is a diagram showing the frequency characteristics of the current density in the shunt resistor shown in Figure 6(a). As shown in Figure 6(a), the shunt resistor 1 may include a plurality (two in this embodiment) of shunt electrode portions 6B formed on the electrode 6. In the embodiments shown below, although not shown, the shunt resistor 1 may also include a plurality (two in this embodiment) of shunt electrode portions 7B formed on the electrode 7 corresponding to the shunt electrode portions 6B.

[0037] In the embodiment shown in Figure 6(a), the shunt resistor 1 includes a current-dividing electrode portion 6Ba and a current-dividing electrode portion 6Bb formed on the electrode 6. In the embodiments shown below, although not shown, the shunt resistor 1 includes a current-dividing electrode portion 7Ba formed on the electrode 7 corresponding to the current-dividing electrode portion 6Ba, and a current-dividing electrode portion 7Bb formed on the electrode 7 corresponding to the current-dividing electrode portion 6Bb. The current-dividing electrode portions 6Ba and 7Ba, and the current-dividing electrode portions 6Bb and 7Bb have the same structure and are arranged symmetrically with respect to the resistor 5.

[0038] The shunt resistor 1 has gaps 11Aa and 11Ba that separate the current-dividing electrode section 6Ba from the main electrode section 6A, and gaps 11Ab and 11Bb that separate the current-dividing electrode section 6Bb from the main electrode section 6A.

[0039] By forming gaps 11Aa and 11Ba, the current-splitting electrode section 6Ba is connected to the resistor 5 independently of the main electrode section 6A. By forming gaps 11Ab and 11Bb, the current-splitting electrode section 6Bb is connected to the resistor 5 independently of the main electrode section 6A. The current-splitting electrode section 6Ba has a voltage detection terminal 15Aa and a recess 16A. The current-splitting electrode section 6Bb has a voltage detection terminal 15Ab and a recess 16B.

[0040] In the embodiments shown below, although not shown, the current shunt electrode section 7Ba has a voltage detection terminal 15Ba corresponding to the voltage detection terminal 15Aa, and the current shunt electrode section 7Bb has a voltage detection terminal 15Bb corresponding to the voltage detection terminal 15Ab. The voltage detection terminals 15Aa and 15Ba, and the voltage detection terminals 15Ab and 15Bb are arranged symmetrically with respect to the resistor 5.

[0041] In this embodiment, the shunt electrode section 6Ba and the shunt electrode section 6Bb have the same structure. In one embodiment, the shunt electrode section 6Ba and the shunt electrode section 6Bb may have different structures. As described above, the temperature coefficient of resistance of the shunt resistor 1 can be adjusted by adjusting the length L1 and thickness D of the recess 16, the length L2 of the voltage detection terminal 15A, and the width W of the shunt electrode section 6B (i.e., the recess 16 and the voltage detection terminal 15a). Therefore, in order to satisfy a desired temperature coefficient of resistance, the lengths L1, L2, thickness D, and width W of the shunt electrode section 6Ba and the lengths L1, L2, thickness D, and width W of the shunt electrode section 6Bb may be adjusted respectively. In the embodiments shown below, the shunt electrode sections 7Ba and 7Bb, which are not shown, have the same structure as the shunt electrode sections 6Ba and 6Bb, and can therefore be adjusted in the same way as described above.

[0042] Curve T1 in Figure 6(c) shows the rate of change in the resistance value of the shunt resistor 1 due to temperature change when the voltage is measured at voltage detection terminals 15Aa and 15Ba (omitted in Figures 6(a) and 6(b)), and curve T2 shows the rate of change in the resistance value of the shunt resistor 1 due to temperature change when the voltage is measured at voltage detection terminals 15Ab and 15Bb (omitted in Figures 6(a) and 6(b)).

[0043] Curve T3 represents the rate of change in the resistance value of the shunt resistor 1 due to temperature changes at the combined voltage obtained by balancing the voltages measured at voltage detection terminals 15Aa and 15Ba and the voltages measured at voltage detection terminals 15Ab and 15Bb. As shown by curve T3, in this embodiment as well, the shunt resistor 1 can significantly reduce the range of fluctuation in the rate of change of resistance due to temperature changes, and the temperature coefficient of resistance (TCR) can be brought closer to 0.

[0044] When the variation in the temperature coefficient of resistance that occurs during the manufacturing of the shunt resistor 1 is to be eliminated by the balancing circuit on the amplifier circuit side, for example, the target value of the temperature coefficient of resistance measured at voltage detection terminals 15Aa and 15Ba should be +15 × 10 -6 Manufactured as / K (25℃~125℃), the target value of the temperature coefficient of resistance measured at voltage detection terminals 15Ab and 15Bb is -15 × 10 -6 It may also be manufactured as / K (25℃~125℃). This type of manufacturing can eliminate variations in the temperature coefficient of resistance.

[0045] In this embodiment, in the shunt resistor 1, as the frequency of the alternating current increases, the current concentrates on the surface of electrode 6, causing a skin effect that changes the distribution of current density. Therefore, as shown in Figure 6(d), the frequency characteristics of the current density can be improved by arranging the shunt electrode sections 6Ba and 6Bb in locations where the fluctuation of current density is small. The same applies to the shunt electrode sections 7Ba and 7Bb, which are not shown in the embodiments described below.

[0046] Figure 7(a) shows another embodiment of the shunt resistor, Figure 7(b) is an enlarged view showing the area enclosed by the dotted line in Figure 7(a), and Figure 7(c) is a graph showing the rate of change of the resistance value of the shunt resistor shown in Figure 7(a). In the embodiment shown in Figure 7(a), similar to the embodiment shown in Figure 6(a), the shunt resistor 1 is provided with a plurality (two in this embodiment) of current-dividing electrode portions 6Ba, 6Bb formed on the electrode 6. In one embodiment, the shunt resistor 1 may be provided with a single current-dividing electrode portion 6B formed on the electrode 6. As described in the embodiments shown in Figures 2 to 4, the current-dividing electrode portion 6B may be placed at any position.

[0047] In the embodiments described below, although not shown in the figures, the shunt resistor 1 includes a plurality (two in this embodiment) of current-dividing electrode sections 7Ba and 7Bb formed on the electrode 7 corresponding to the current-dividing electrode sections 6Ba and 6Bb. The current-dividing electrode sections 6Ba and 7Ba, and the current-dividing electrode sections 6Bb and 7Bb have the same structure and are arranged symmetrically with respect to the resistor 5. In one embodiment, the shunt resistor 1 may include a single current-dividing electrode section 7B formed on the electrode 7 corresponding to the current-dividing electrode section 6B. The current-dividing electrode section 6B and 7B have the same structure and are arranged symmetrically with respect to the resistor 5. As described in the embodiments shown in Figures 2 to 4, the current-dividing electrode section 7B may be placed at any position.

[0048] In the embodiment shown in Figure 7(a), the current-splitting electrode sections 6Ba and 6Bb may include voltage detection terminals 25Aa and 25Ab that are spaced apart from the main electrode section 6A and connected to the resistor 5, and electrode bars 26Aa and 26Ab that connect the voltage detection terminals 25Aa and 25Ab to the electrode 6. The electrode bars 26Aa and 26Ab are high-precision machined rod-shaped members corresponding to the recess 16 described above. In one embodiment, each of the electrode bars 26Aa and 26Ab may be made of the same metal as the electrode 6 (for example, copper), or it may be made of a low-resistivity metal having a lower electrical resistivity than the alloy that constitutes the resistor 5.

[0049] In the embodiments shown below, although not shown, the current shunt electrode section 7Ba has a voltage detection terminal 25Ba corresponding to the voltage detection terminal 25Aa, and the current shunt electrode section 7Bb has a voltage detection terminal 25Bb corresponding to the voltage detection terminal 25Ab. The voltage detection terminals 25Aa and 25Ba, and the voltage detection terminals 25Ab and 25Bb are arranged symmetrically with respect to the resistor 5.

[0050] Figure 8 shows how the electrode bar is attached to the voltage detection terminal. As shown in Figure 8, the voltage detection terminal 25Aa(25Ab) has an insertion groove 28 into which the electrode bar 26Aa(26Ab) is inserted, and the electrode 6 has an insertion groove 29 into which the electrode bar 26Aa(26Ab) is inserted. As shown in Figure 8, the electrode bar 26Aa(26Ab) is inserted into the insertion grooves 28 and 29, and in this state, the electrode bar 26Aa(26Ab) is brazed with solder 30. In the embodiment shown in Figure 8, the electrode bar 26Aa(26Ab) has a cylindrical shape, but it may also have a polygonal prism shape. In one embodiment, the electrode bar 26Aa(26Ab) may be a single wire. In the embodiments shown below, the current diversion electrode sections 7Ba and 7Bb, which are not shown, have the same structure as the current diversion electrode sections 6Ba and 6Bb, and have the same electrode bar and solder.

[0051] Curve T1 in Figure 7(c) shows the rate of change in the resistance value of the shunt resistor 1 due to temperature changes when the voltage is measured at voltage detection terminals 25Aa and 25Ba (omitted in Figures 7(a) and 7(b)), and curve T2 shows the rate of change in the resistance value of the shunt resistor 1 due to temperature changes when the voltage is measured at voltage detection terminals 25Ab and 25Bb (omitted in Figures 7(a) and 7(b)).

[0052] Curve T3 represents the rate of change in the resistance value of the shunt resistor 1 due to temperature changes at the combined voltage obtained by balancing the voltages measured at voltage detection terminals 25Aa and 25Ba and the voltages measured at voltage detection terminals 25Ab and 25Bb. As shown by curve T3, in this embodiment as well, the shunt resistor 1 can significantly reduce the range of fluctuation in the rate of change of resistance due to temperature changes, and the temperature coefficient of resistance (TCR) can be brought closer to 0.

[0053] Figure 9(a) shows another embodiment of the shunt resistor, Figure 9(b) is an enlarged view showing the area enclosed by the dotted line in Figure 9(a), and Figure 9(c) is a graph showing the rate of change of the resistance value of the shunt resistor shown in Figure 9(a). In the embodiment shown in Figure 9(a), the thickness of the recess 16 is the same as the thickness of the resistor 5. As shown in Figure 9(c), in this embodiment as well, the shunt resistor 1 can significantly reduce the range of fluctuation in the rate of change of the resistance value due to temperature changes, and the temperature coefficient of resistance (TCR) can be brought close to 0.

[0054] Figure 10(a) shows another embodiment of the shunt resistor, Figure 10(b) is an enlarged view showing the area enclosed by the dotted line in Figure 10(a), and Figure 10(c) is a graph showing the rate of change of the resistance value of the shunt resistor shown in Figure 10(a). In the embodiment shown in Figure 10(a), the shunt resistor 1 comprises a current-dividing electrode portion 6B arranged along its end face 20A and a gap portion 31 formed in the resistor 5 connected to the gap portion 11.

[0055] In the embodiment shown in Figure 10(a), the shunt resistor 1 has a single void 11, but it may also have voids 11A and 11B arranged on both sides of the current-splitting electrode 6B. Even in this case, the resistor 5 has voids 31 connected to the voids 11A and 11B. The number of voids 31 formed in the resistor 5 corresponds to the number of voids formed in the electrodes 6 and 7. As shown in Figure 10(c), in this embodiment as well, the shunt resistor 1 can significantly reduce the fluctuation range of the rate of change of resistance due to temperature changes, and the temperature coefficient of resistance (TCR) can be brought close to 0.

[0056] Figure 11(a) shows another embodiment of the shunt resistor, Figure 11(b) is an enlarged view showing the area enclosed by the dotted line in Figure 11(a), and Figure 11(c) is a graph showing the rate of change of the resistance value of the shunt resistor shown in Figure 11(a). In the embodiment shown in Figure 11(a), the shunt resistor 1 comprises a circular gap 32 formed by a drill, a recess 36 formed by a drill, and a voltage detection terminal 35 formed between the recess 36 and the resistor 5.

[0057] As shown in Figure 11(a), the gap 32 and recess 36 may be formed by drilling the electrode 6. As shown in Figure 11(c), even with this configuration, the shunt resistor 1 can significantly reduce the range of fluctuation in the rate of change of resistance due to temperature changes, and the temperature coefficient of resistance (TCR) can be brought close to 0.

[0058] Figure 12(a) shows another embodiment of the shunt resistor, Figure 12(b) is a magnified view of the area enclosed by the dotted line in Figure 12(a), and Figure 12(c) is a graph showing the rate of change of the resistance value of the shunt resistor shown in Figure 12(a).

[0059] As shown in Figure 12(a), the shunt resistor 1 may have a new void 40 in addition to the voids 11Aa, 11Ba and voids 11Ab, 11Bb. In the embodiment shown in Figure 12(a), the void 40 is formed by drilling, but it is not necessarily required to be formed additionally. By forming the void 40, the temperature coefficient of resistance can be adjusted with greater precision.

[0060] Curve T1 in Figure 12(c) shows the rate of change in the resistance value of the shunt resistor 1 due to temperature change when the voltage is measured at the voltage detection terminal 15Aa and the corresponding voltage detection terminal 15Ba formed on the current shunt electrode section 7Ba (omitted in Figures 12(a) and (b)). Curve T2 shows the rate of change in the resistance value of the shunt resistor 1 due to temperature change when the voltage is measured at the voltage detection terminal 15Ab and the corresponding voltage detection terminal 15Bb formed on the current shunt electrode section 7Bb (omitted in Figures 12(a) and (b)). Note that the voltage detection terminals 15Aa and 15Ba, and the voltage detection terminals 15Ab and 15Bb are arranged symmetrically with respect to the resistor 5.

[0061] Curve T3 represents the rate of change in the resistance value of the shunt resistor 1 due to temperature changes at the combined voltage obtained by balancing the voltages measured at voltage detection terminals 15Aa and 15Ba and the voltages measured at voltage detection terminals 15Ab and 15Bb. As shown by curve T3, in this embodiment as well, the shunt resistor 1 can significantly reduce the range of fluctuation in the rate of change of resistance due to temperature changes, and the temperature coefficient of resistance (TCR) can be brought closer to 0.

[0062] Figure 13(a) shows another embodiment of the shunt resistor, Figure 13(b) shows the shunt resistor shown in Figure 13(a) viewed from a different angle than that shown in Figure 13(a), and Figure 13(c) is a graph showing the rate of change of the resistance value of the shunt resistor shown in Figure 13(a).

[0063] As shown in Figures 13(a) and 13(b), the shunt resistor 1 comprises resistors 50 arranged parallel to each other on one plane 65A of the electrode 60, and voltage detection terminals 55Aa and 55Ab arranged between adjacent resistors 50. The voltage detection terminals 55Aa and 55Ab are located on one plane 65A of the electrode 60.

[0064] Although not shown in the figures, in this embodiment, the shunt resistor 1 includes an electrode 70 having the same structure as electrode 60, and electrodes 60 and 70 are arranged symmetrically with respect to the resistor 50. The shunt resistor 1 includes voltage detection terminals 55Ba and 55Bb on electrode 70, corresponding to voltage detection terminals 55Aa and 55Ab, and voltage detection terminals 55Aa and 55Ba, and voltage detection terminals 55Ab and 55Bb are arranged symmetrically with respect to the resistor 50.

[0065] A gap 51B is formed between the voltage detection terminals 55Aa and 55Ab. A gap 51A is also formed between one plane 65A and the other plane 65B of the electrode 60. The gaps 51A and 51B are connected to each other. The voltage detection terminal 55Aa is located in the shunt electrode section 60B, and the voltage detection terminal 55Ab is located in the main electrode section 60A. The shunt electrode section 60B is separated from the main electrode section 60A by the gap 51B.

[0066] As shown in Figures 13(a) and 13(b), the shunt resistor 1 includes a recess 62 formed by the air gap 51A. The thickness (depth) of the recess 62 is adjusted by the size of the air gap 51A.

[0067] Curve T1 in Figure 13(c) shows the rate of change in the resistance value of the shunt resistor 1 due to temperature change when the voltage is measured at voltage detection terminals 55Aa and 55Ba (omitted in Figures 13(a) and 13(b)), and curve T2 shows the rate of change in the resistance value of the shunt resistor 1 due to temperature change when the voltage is measured at voltage detection terminals 55Ab and 55Bb (omitted in Figures 13(a) and 13(b)).

[0068] Curve T3 represents the rate of change in the resistance value of the shunt resistor 1 due to temperature changes at the combined voltage obtained by balancing the voltages measured at voltage detection terminals 55Aa and 55Ba and the voltages measured at voltage detection terminals 55Ab and 55Bb. As shown by curve T3, in this embodiment as well, the shunt resistor 1 can significantly reduce the range of fluctuation in the rate of change of resistance due to temperature changes, and the temperature coefficient of resistance (TCR) can be brought closer to 0.

[0069] Figure 14 shows one embodiment of a method for manufacturing a shunt resistor. In the embodiments described below, the reference numerals for the components of the shunt resistor will be omitted in order to clearly explain the manufacturing process of the shunt resistor 1. The manufacturing method shown in Figure 14 is a method for manufacturing the shunt resistor according to the embodiment shown in Figure 1.

[0070] A plate-shaped shunt resistor having a resistor and a pair of electrodes (manufacturing method omitted) is prepared, and as shown in step S101 of Figure 14, a gap is first formed in the electrodes. Then, a main electrode section is formed that branches off from the electrodes and connects to the resistor, and a divert electrode section has a higher resistance value than the main electrode section, branches off from the electrodes and connects to the resistor (see step S102). In the process of forming the divert electrode section, a voltage detection terminal is formed in the divert electrode section.

[0071] The temperature coefficient of resistance (temperature resistance characteristic) of shunt resistor 1 depends on the shape and size of the air gap. More specifically, the size (length, width) of the current-splitting electrode section can be changed by altering the shape and size of the air gap. Therefore, to obtain the desired temperature resistance characteristic, the temperature resistance characteristic is adjusted by adjusting the shape and size of the air gap.

[0072] As shown in Figures 2 to 4, the resistance-temperature characteristics may be adjusted by the position of the current-splitting electrode. As shown in Figures 2 to 12, the manufacturing process of the shunt resistor may further include a recess-forming step in which a recess is formed in the current-splitting electrode. The resistance-temperature coefficient of the shunt resistor 1 also depends on the thickness of the recess. Therefore, the resistance-temperature characteristics may be adjusted by the thickness (in other words, depth) of the recess.

[0073] Figure 15 shows another embodiment of the method for manufacturing a shunt resistor. The manufacturing method shown in Figure 15 is a method for manufacturing a shunt resistor according to the embodiments shown in Figures 7 and 8. A plate-shaped shunt resistor having a resistor and a pair of electrodes (manufacturing method omitted) is prepared, and as shown in step S201 of Figure 15, a main electrode section is formed that branches off from the electrodes and connects to the resistor, and a voltage detection terminal is formed that is separated from the electrodes and connects to the resistor (see step S202). Then, the electrodes and the voltage detection terminal are electrically connected by an electrode bar to form a current-dividing electrode section (see step S203).

[0074] The temperature coefficient of resistance (temperature resistance characteristic) of shunt resistor 1 depends on the cross-sectional area, length, and material of the electrode bars. Therefore, to obtain the desired temperature resistance characteristic, the temperature resistance characteristic is adjusted by changing the cross-sectional area, length, and material of the electrode bars.

[0075] Figure 16 is a diagram illustrating a method for adjusting the characteristics of a shunt resistor. Figure 17 is a diagram illustrating a comparative example. Similar to Figures 2 to 13, electrode 7 has the same structure as electrode 6, so the description and illustration of electrode 7 are omitted. In the embodiments shown below, the reference numerals of the components of the shunt resistor are omitted in order to clearly explain the method for adjusting the characteristics of the shunt resistor 1.

[0076] As shown in Figure 16, if the current path flowing between the main electrode and the resistor is defined as the main path, and the current path flowing between the shunt electrode and the resistor is defined as the shunt path, the resistance component of the main path consists of the resistance component R2 in the main electrode and the resistance component R4 in the resistor adjacent to the main electrode (main resistor) in series (R2 + R4). The resistance component of the shunt path consists of the resistance component R1 in the shunt electrode and the resistance component R3 in the resistor adjacent to the shunt electrode (shunt resistor) in series (R1 + R3). The resistance component R1 of the shunt electrode includes the resistance component of the shunt electrode of electrode 6 and the resistance component of the shunt electrode of electrode 7, and the resistance component R2 of the main electrode includes the resistance component of the main electrode of electrode 6 and the resistance component of the main electrode of electrode 7.

[0077] The resistance component of a shunt resistor consists of the main current path resistance component (R2+R4) and the shunt current path resistance component (R1+R3), in parallel ((R2+R4)×(R1+R3) / (R2+R4)+(R1+R3)). If the voltage across resistance component R3 is defined as the detection voltage V3, the temperature characteristics of the detection voltage V3 can be adjusted by changing the resistance value of resistance component R1.

[0078] The detected voltage V3 is calculated by multiplying the current I1 flowing through the shunt path by the resistance component R3 (Equation 1: V3 = I1 × R3). The current I1 is calculated by dividing the total detected voltage V0 of the shunt resistor by the sum of the resistance components R1 and R3 (Equation 2: I1 = V0 / (R1 + R3)). The detected voltage V0 is calculated by the following formula: Equation 3: V0 = I0 × (((R1 + R3) × (R2 + R4)) / (R1 + R2 + R3 + R4))

[0079] From equations 2 and 3, the current I1 can be converted to the following formula: Equation 4: I1 = I0 × ((R2 + R4) / (R1 + R2 + R3 + R4)) According to equations 1 and 4, the detected voltage V3 can be converted to the following formula: Equation 5: V3 = I0 × (R2 + R4) × R3 / (R1 + R2 + R3 + R4) Here, if we define (R2+R4)×R3 as the resistance component R5 and R2+R3+R4 as the resistance component R6, the detected voltage V3 in Equation 5 can be converted to the following formula: Equation 6: V3=I0×R5 / (R1+R6)

[0080] Figure 18 is a table showing the definitions of numerical values ​​for the shunt resistor characteristic adjustment method. The reference temperature is defined as x°C, and the test temperature is defined as y°C. The rate of change of the electrode resistance when the temperature changes from the reference temperature x°C to the test temperature y°C is defined as a, and the rate of change of the resistor's resistance is defined as b. The rate of change of resistance a and b are determined by the material properties. The resistance components at the reference temperature x°C are defined as R1x to R6x, and the detection voltage is defined as V3x. The resistance components at the test temperature y°C are defined as R1y to R6y, and the detection voltage is defined as V3y.

[0081] The detected voltage V3x is calculated using the following formula: Formula 7: V3x = I0 × R5x / (R1x + R6x) The detected voltage V3y can be calculated using the following formula: Formula 8: V3y = I0 × R5y / (R1y + R6y) Since the resistance component R1y is a × R1x, Equation 8 can be converted to the following formula: Equation 9: V3y = I0 × R5y / (a ​​× R1x + R6y)

[0082] When the temperature coefficient of resistance of shunt resistor 1 is positive, the detected voltage V3y is greater than the detected voltage V3x. Equation 10: V3x <V3y If the temperature coefficient of resistance of shunt resistor 1 is negative, the detected voltage V3y is less than the detected voltage V3x. Equation 11: V3x > V3y When the temperature coefficient of resistance of shunt resistor 1 is zero, the detected voltages V3y and V3x are equal. Equation 12: V3x = V3y

[0083] Therefore, from equations 7, 9, and 12, when equation 13: I0 × R5x / (R1x + R6x) = I0 × R5y / (a ​​× R1x + R6y) holds, the temperature coefficient of resistance of shunt resistor 1 can be made zero. Converting equation 13 into an equation for finding the solution of R1x, equation 13 is transformed into the following calculation formula: Equation 14: R1x = ((R5y × R6x) - (R5x × R6y)) / ((a × R5x) - R5y)) In other words, by adjusting R1x so that equation 14 holds true, the temperature coefficient of resistance of the shunt resistor 1 can be made zero.

[0084] Figure 19 is a table showing an example of numerical values ​​for the shunt resistor characteristic adjustment method. For example, at a reference temperature of 25°C and a test temperature of 150°C, if a=1.505, b=1.0125, R2x=0.3[mΩ], R3x=40[mΩ], and R4x=20[mΩ], then calculating R1x from Equation 14, we get R1x = 2.24[mΩ]. In other words, by adjusting R1x to 2.24mΩ, the temperature coefficient of resistance of shunt resistor 1 can be made zero.

[0085] When R1x < 2.24 [mΩ], the temperature coefficient of resistance of shunt resistor 1 is positive. When R1x > 2.24 [mΩ], the temperature coefficient of resistance of shunt resistor 1 is negative. In other words, it is possible to adjust the temperature coefficient of resistance of shunt resistor 1 by adjusting the value of R1.

[0086] In the comparative example shown in Figure 17, since the shunt resistor does not have an air gap, the change in the current density distribution of the electrodes is small even when the temperature changes, and the temperature characteristics of the voltage across the resistive component R3 (detection voltage V3) are determined by the resistance temperature characteristics of the resistor.

[0087] On the other hand, in this embodiment (see Figure 16), since the shunt resistor has an air gap, the cross-sectional area of ​​the current diversion path is smaller than the cross-sectional area of ​​the main current path, and the resistance value of the resistance component R1 in the current diversion electrode section is higher than the resistance component R2 in the main current electrode section. When the temperature of the shunt resistor 1 changes, the temperatures of the current diversion electrode section, the main current electrode section, and the resistor change similarly, but since the resistance value component of the current diversion path (R1+R3) is higher than the resistance component of the main current path (R2+R4), the ratio of the currents in the current diversion path to the main current path (I1:I2) changes.

[0088] For example, if the temperature coefficient of resistance of the electrode material and the resistor material are both positive, and the temperature coefficient of resistance of the electrode is significantly larger than that of the resistor, then in the embodiment shown in Figure 17, the detected voltage at the voltage detection terminal will have a positive temperature characteristic, and the shunt resistor 1 will have a positive resistance temperature characteristic. In this embodiment (see Figure 16), when the temperature changes, the ratio of the current in the shunt path to the main path changes, and the current flowing through the shunt electrode section will have a negative temperature characteristic. Even if the resistance component R3 of the shunt resistor has a positive temperature characteristic, the negative temperature characteristic of the current flowing through the shunt electrode section negatively affects the temperature characteristic of the detected voltage V3 at the voltage detection terminal, and the temperature characteristic of the detected voltage V3 can be adjusted to a positive, negative, or zero value depending on the balance. In other words, in this embodiment (see Figure 16), the temperature coefficient of resistance of the shunt resistance value 1 can be adjusted to a positive, negative, or zero value.

[0089] Figure 20 shows another embodiment of the shunt resistor. In the embodiment shown in Figure 20, the electrodes have a gap that extends in the width direction, and a voltage detection terminal is provided on the electrode between the gap and the resistor. The concept of the above relation also holds true in the embodiment shown in Figure 20, and the temperature coefficient of resistance of the shunt resistance value 1 can be adjusted to a positive value, a negative value, or 0.

[0090] The embodiments described above are intended to enable persons with ordinary skill in the art to implement the present invention. Various modifications of the above embodiments can be made naturally by those skilled in the art, and the technical idea of ​​the present invention can be applied to other embodiments as well. Therefore, the present invention is not limited to the embodiments described, but is to be interpreted in the broadest sense according to the technical idea defined by the claims. [Explanation of Symbols]

[0091] 1. Shunt resistor 5 Resistors 6,7 electrodes 6A Mainstream electrode section 6B Shunt electrode part 6Ba shunt electrode part 6Bb Shunt electrode part 7A Mainstream electrode section 7B Shunt electrode section 8A, 8B, 8 bolt holes 10A,10B end face 11,11A,11B void part 11Aa,11Ba void area 11Ab,11Bb void area 12A,12B void area 15A, 15Aa, 15Ab, 15B Voltage detection terminals 16, 16A, 16B recess 20A,20B end face 25Aa, 25Ab Voltage detection terminals 26Aa, 26Ab electrode bars 28,29 Insertion grooves 30 31 Cavity 32 Cavity 35 Voltage detection terminal 36 recesses 40 Cavity 50 resistors 51A,51B Gap 55Aa, 55Ab Voltage detection terminals 60 electrodes 60A Mainstream electrode section 60B Shunt electrode part 62 recesses 65A One side plane 65B Other plane

Claims

1. A shunt resistor used for current detection, comprising a resistor and electrodes connected to both ends of the resistor, The electrode is Main electrode section, The main electrode section and the branched current distribution electrode section, A voltage detection terminal provided in the current division electrode section, It includes a gap formed to connect the main electrode portion and the current diversion electrode portion independently to the resistor, A shunt resistor having a recess in the current-dividing electrode between the connection portion of the main electrode portion and the current-dividing electrode portion and the voltage detection terminal, thereby increasing the resistance value of the current-dividing electrode portion to that of the main electrode portion.

2. The shunt resistor according to claim 1, wherein the voltage detection terminal is provided along the connection between the resistor and the current diversion electrode.

3. A method for manufacturing a shunt resistor comprising a resistor and electrodes connected to both ends of the resistor, A step of forming a main electrode portion connected to the resistor, A step of forming a voltage detection terminal that is spaced apart from the electrode and connected to the resistor, The process includes forming a branch electrode section separated from the main electrode section, The step of forming the current-dividing electrode section is a step of electrically connecting the electrode and the voltage detection terminal using an electrode bar. A method for manufacturing a shunt resistor, wherein the resistance-temperature characteristics are adjusted by the cross-sectional area, length, and material of the electrode bar.

4. A method for manufacturing a shunt resistor according to claim 3, wherein the resistance temperature characteristics are adjusted by the position of the current diversion electrode portion.

5. The process includes a recess forming step in which a recess is formed in the current dividing electrode portion, A method for manufacturing a shunt resistor according to claim 3, wherein the resistance temperature characteristics are adjusted by the depth of the recess.

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