Ion bombardment apparatus and ion bombardment treatment method

Abstract

To provide an ion bombardment device capable of reducing variation of an etching amount on a surface of a base material, and an ion bombardment processing method.SOLUTION: An ion bombardment device 1 has a vacuum chamber 2, a rotary table 11, a filament 3, a discharge power source 22, a filament heating power source 3T, and a magnetic field generating mechanism 20. The filament 3 has an upper end part 31 and a lower end part 32. The magnetic field generating mechanism 20 includes an upper stage electromagnetic coil 201 for generating a first magnetic field in an area including the upper end part 31 of the filament 3, and a lower stage electromagnetic coil 202 for generating a second magnetic field in an area including the lower end part 32 of the filament 3. Plasma near the end of the filament 3 is reinforced by the first magnetic field and the second magnetic field, so as to reduce variation of plasma density and variation of the etching amount.SELECTED DRAWING: Figure 3

Description

Technical Field

[0001] The present invention relates to an ion bombardment apparatus for cleaning the surface of a substrate and an ion bombardment treatment method.

Background Art

[0002] Generally, for the purpose of improving the wear resistance of cutting tools and the sliding characteristics of the sliding surfaces of machine parts, a hard film is formed on the surface of a substrate (film formation target) by a PVD method or a CVD method. Examples of apparatuses used for forming such a hard film include physical vapor deposition apparatuses such as arc ion plating apparatuses and sputtering apparatuses, and chemical vapor deposition apparatuses such as plasma CVD apparatuses.

[0003] In order to form a hard film with high adhesion using such physical vapor deposition apparatuses and chemical vapor deposition apparatuses, it is known to purify (clean) the surface of the substrate before performing the film formation treatment. As this purification treatment, there is a method (ion bombardment method) of generating heavy inert gas ions such as argon ions by plasma discharge and irradiating these ions onto the substrate to heat and clean the surface.

[0004] As a technique for performing the above-described purification treatment, Patent Document 1 discloses an ion bombardment apparatus for cleaning the surface of a substrate in a vacuum chamber. The ion bombardment apparatus includes an electrode that is disposed in the vacuum chamber near the inner wall surface of the vacuum chamber and emits electrons, a plurality of anodes that are disposed near the inner wall surface on the opposite side of the electrode across the processing space for the substrate and receive electrons, and a discharge power source that applies a discharge voltage between the electrode and the plurality of anodes. The electrode is composed of a filament extending in the vertical direction, and the plurality of anodes are arranged at intervals in the vertical direction. When the discharge voltage is applied, electrons are emitted from the electrode, and plasma is generated between the electrode and the plurality of anodes. As a result, argon ions generated in the plasma collide with the substrate to which a negative bias voltage is applied, and the surface of the substrate is cleaned. [Prior art documents] [Patent Documents]

[0005] [Patent Document 1] Japanese Patent Publication No. 2014-152356 [Overview of the project] [Problems that the invention aims to solve]

[0006] When cleaning the surface of a substrate using the apparatus described in Patent Document 1, there was a problem in that the amount of etching (amount of material removed) on the substrate surface tended to vary greatly. Specifically, in the above technique, filament electrodes are connected to the upper and lower ends of the filament, and a heating current flows through these electrodes to the filament, causing the filament to heat up and emit electrons. In such a configuration, the central part of the filament tends to become hotter than the upper and lower ends, and in the vacuum chamber, the plasma density in the central part in the vertical direction becomes higher than the plasma density in the upper and lower parts. As a result, differences in the amount of etching on the substrate surface due to ion collisions tend to occur between the central part of the substrate and the upper and lower parts in the vertical direction. In this case, if etching is performed in the central part of the substrate where the surrounding plasma density is high, the surface of the substrate may be removed more than necessary. On the other hand, if etching is performed in the upper and lower parts where the surrounding plasma density is low, the surface of the substrate may not be removed to the predetermined amount of etching.

[0007] Furthermore, when a film deposition treatment is applied to the substrate after the cleaning process, if there is variation in the amount of etching of the substrate as described above, it becomes impossible to uniformly adhere the hard film to the surface of the substrate, making it difficult to improve the abrasion resistance of the substrate.

[0008] The object of the present invention is to provide an ion bombardment apparatus and an ion bombardment method that can reduce variations in the amount of etching on the surface of a substrate by reducing variations in the plasma density formed in a vacuum chamber in an apparatus that uses a filament as an electrode. [Means for solving the problem]

[0009] The present invention provides an ion bombardment apparatus for cleaning a substrate surface by irradiating the surface of the substrate with ions. The ion bombardment apparatus comprises a vacuum chamber, a substrate support, at least one filament, an anode, a discharge power supply, a filament heating power supply, and at least one magnetic field generating mechanism. An internal space is formed inside the vacuum chamber. The substrate support is arranged in the internal space and supports the substrate. The at least one filament extends in a predetermined extension direction within the internal space and is arranged to face the substrate. The at least one filament includes one end and another end opposite to the one end in the extension direction. The anode is arranged to be exposed to at least the internal space. The discharge power supply applies a discharge voltage between the at least one filament and the anode. The filament heating power supply heats the filament by applying a heating voltage between the one end and the other end of the at least one filament. The at least one magnetic field generating mechanism is arranged on the side of the filament opposite to the substrate. The at least one magnetic field generating mechanism includes a first magnetic field generating unit that generates a first magnetic field in a region including one end of the at least one filament, and a second magnetic field generating unit that generates a second magnetic field in a region including the other end of the at least one filament.

[0010] With this configuration, the plasma density around one end and the other end of the filament can be strengthened by the first magnetic field generated by the first magnetic field generating unit and the second magnetic field generated by the second magnetic field generating unit, thereby reducing variations in plasma density in the extension direction of the filament. As a result, it becomes possible to reduce variations in the amount of etching on the surface of the substrate in the extension direction.

[0011] In the above configuration, it is desirable that the first magnetic field generating unit and the second magnetic field generating unit have the same polarity as each other, such that in the processing direction which is perpendicular to the extension direction and connects the at least one magnetic field generating mechanism and the substrate, the direction of the magnetic field lines included in the first magnetic field and passing through one end is the same as the direction of the magnetic field lines included in the second magnetic field and passing through the other end.

[0012] With this configuration, since the polarities of the first and second magnetic fields formed around one end and the other end of the filament are the same, the magnetic field shapes in the regions corresponding to both ends of the filament are approximated, and variations in plasma density in the direction of filament extension can be further reduced. In addition, even when the length of the filament is relatively short, the formation of strong magnetic field lines that attract each other between the first and second magnetic fields is suppressed, and the plasma distribution in the direction of extension can be stabilized.

[0013] In the above configuration, it is preferable that the at least one filament further includes an intermediate portion disposed between one end and the other end, and the at least one magnetic field generating mechanism further includes at least one intermediate magnetic field generating portion disposed between the first magnetic field generating portion and the second magnetic field generating portion in the extending direction, which generates an intermediate magnetic field in the region of the at least one filament including the intermediate portion.

[0014] With this configuration, the intermediate magnetic field of the intermediate magnetic field generator prevents large fluctuations in the plasma density in the region facing the middle of the filament that occur with the formation of the first and second magnetic fields, and further stabilizes the magnetic field distribution in the extension direction around the filament.

[0015] In the above configuration, it is desirable that the first magnetic field generating unit, the second magnetic field generating unit, and the intermediate magnetic field generating unit have the same polarity so that in the processing direction which is perpendicular to the extension direction and connects the at least one magnetic field generating mechanism and the substrate, the direction of the magnetic field lines included in the first magnetic field and passing through one end, the direction of the magnetic field lines included in the second magnetic field and passing through the other end, and the direction of the magnetic field lines included in the intermediate magnetic field and passing through the intermediate part are the same.

[0016] This configuration allows for aligning the direction of magnetic field lines at one end, the middle section, and the other end of the filament, thereby stabilizing the magnetic field distribution in the extension direction around the filament. As a result, the plasma distribution in the extension direction is stabilized, further reducing variations in etching on the substrate surface.

[0017] In the above configuration, it is desirable that the magnetic force of the intermediate magnetic field generating unit be set to be smaller than the magnetic forces of the first magnetic field generating unit and the second magnetic field generating unit.

[0018] This configuration allows for further stabilization of the plasma distribution in the extension direction by relatively weakening the magnetic field strength around the intermediate portion of the filament, where the temperature tends to be relatively higher compared to one end and the other end.

[0019] In the above configuration, it is preferable that the at least one filament includes a first filament and a second filament arranged together with the first filament to sandwich the substrate from both sides in a direction perpendicular to the extension direction, and that the at least one magnetic field generating mechanism includes a first magnetic field generating mechanism that generates a magnetic field around the first filament and a second magnetic field generating mechanism arranged together with the first magnetic field generating mechanism to sandwich the substrate from both sides in a direction perpendicular to the extension direction and generates a magnetic field around the second filament.

[0020] According to this configuration, two plasma regions are formed by two filaments arranged around the substrate, thereby accelerating ion bombardment (etching) of the substrate. Furthermore, by providing a unique magnetic field generation mechanism for each filament, it is possible to improve the density and uniformity of the plasma in the extension direction, and the variation in the distribution of etching amount on the substrate can also be reduced.

[0021] In the above configuration, it is desirable that the first magnetic field generating part and the second magnetic field generating part of the first magnetic field generating mechanism have the same polarity so that, in a direction perpendicular to the extension direction and connecting the first magnetic field generating mechanism and the substrate, the direction of the magnetic field lines included in the first magnetic field of the first magnetic field generating mechanism and passing through one end of the first filament is the same as the direction of the magnetic field lines included in the second magnetic field of the first magnetic field generating mechanism and passing through the other end of the first filament; and that the first magnetic field generating part and the second magnetic field generating part of the second magnetic field generating mechanism have the same polarity so that, in a direction perpendicular to the extension direction and connecting the second magnetic field generating mechanism and the substrate, the direction of the magnetic field lines included in the first magnetic field of the second magnetic field generating mechanism and passing through one end of the second filament is the same as the direction of the magnetic field lines included in the second magnetic field of the second magnetic field generating mechanism and passing through the other end of the second filament; and that the first magnetic field generating part and the second magnetic field generating part of the first magnetic field generating mechanism have opposite polarities.

[0022] According to this configuration, by reversing the polarities of the magnetic fields of the two magnetic field generation mechanisms, magnetic field lines that attract each other are formed between the two magnetic fields, so that the etching process for the base material can be stably performed.

[0023] In the above configuration, the first magnetic field generation part and the second magnetic field generation part of the at least one magnetic field generation mechanism are each constituted by an electromagnetic coil having a center line extending in a direction perpendicular to the extending direction and connecting the at least one magnetic field generation mechanism and the base material, and the at least one magnetic field generation mechanism preferably further includes a coil power supply that generates the first magnetic field and the second magnetic field respectively by flowing currents through the electromagnetic coil of the first magnetic field generation part and the electromagnetic coil of the second magnetic field generation part.

[0024] According to this configuration, by the coil power supply flowing currents through the respective electromagnetic coils, magnetic fields can be easily formed around one end portion and the other end portion of the filament.

[0025] In the above configuration, it is preferable that a pair of electrodes to which the heating voltage is applied are further provided and are respectively connected to the one end portion and the other end portion of the at least one filament, and the electromagnetic coil of the first magnetic field generation part is arranged so as to surround one of the pair of electrodes, and the electromagnetic coil of the second magnetic field generation part is arranged so as to surround the other electrode of the pair of electrodes.

[0026] According to this configuration, by arranging each electromagnetic coil using a pair of electrodes respectively connected to one end portion and the other end portion of the filament as a guide, magnetic fields can be surely formed around one end portion and the other end portion of the filament.

[0027] Provided by the present invention is an ion bombardment treatment method for cleaning the surface of a substrate, comprising: supporting the substrate by a substrate support portion disposed in the internal space of a vacuum chamber; disposing at least one filament in the internal space so as to extend in a predetermined extending direction and face the substrate; installing at least one magnetic field generation mechanism disposed on the side opposite to the substrate with respect to the filament, the at least one magnetic field generation mechanism including a first magnetic field generation portion that generates a first magnetic field in a region including one end portion of the at least one filament, and a second magnetic field generation portion that generates a second magnetic field in a region including the other end portion of the at least one filament on the side opposite to the one end portion in the extending direction; heating the at least one filament by applying a heating voltage between the one end portion and the other end portion of the at least one filament; generating a plasma by applying a discharge voltage between an anode disposed so as to be exposed at least to the internal space and the at least one filament; and cleaning the surface by irradiating ions contained in the plasma onto the surface of the substrate while increasing the density of the plasma around the one end portion and the other end portion of the at least one filament by at least the first magnetic field and the second magnetic field.

[0028] According to this method, since the plasma density in the regions facing one end portion and the other end portion of the filament can be enhanced by the first magnetic field by the first magnetic field generation portion and the second magnetic field by the second magnetic field generation portion, the variation in the plasma density in the extending direction of the filament can be reduced. As a result, it becomes possible to reduce the variation in the etching amount on the surface of the substrate in the extending direction.

Advantages of the Invention

[0029] According to the present invention, in an apparatus using a filament as an electrode, it is possible to reduce variations in the amount of etching on the surface of a substrate by reducing variations in the plasma density formed in the vacuum chamber. This provides an ion bombardment apparatus and an ion bombardment method. [Brief explanation of the drawing]

[0030] [Figure 1] This is a side cross-sectional view of an ion bombardment apparatus according to one embodiment of the present invention. [Figure 2] This is a plan cross-sectional view of an ion bombardment apparatus according to one embodiment of the present invention. [Figure 3] This is an enlarged side cross-sectional view of an ion bombardment apparatus according to one embodiment of the present invention. [Figure 4] This graph shows the distribution of etching amounts of the substrate in Example 1 and Comparative Example 1 of the present invention. [Figure 5] This graph shows the distribution of etching amounts of the substrate in Examples 1 and 2 of the present invention. [Figure 6] This graph shows the distribution of etching amounts of the substrate in Examples 2 and 3 of the present invention. [Figure 7] This graph shows the distribution of etching amounts of the substrate in Examples 3 and 4 of the present invention. [Figure 8] This graph shows the distribution of etching amounts of the substrate in Example 3 and Comparative Example 1 of the present invention. [Figure 9] This graph shows the distribution of etching amounts of the substrate in Comparative Example 1 and Comparative Example 2, which are compared with each example of the present invention. [Figure 10] This is a plan view showing the magnetic field distribution around the substrate in an embodiment of the present invention. [Figure 11] This is a side cross-sectional view of an ion bombardment apparatus in a modified embodiment of the present invention. [Modes for carrying out the invention]

[0031] Hereinafter, an embodiment of the present invention will be described in detail with reference to the attached drawings. Figure 1 is a side cross-sectional view of the ion bombardment apparatus 1 according to this embodiment. Figure 2 is a plan cross-sectional view of the ion bombardment apparatus 1. Figure 3 is an enlarged side cross-sectional view of the ion bombardment apparatus 1. The ion bombardment apparatus 1 cleans the surface of a workpiece W (substrate) by irradiating the surface with ions. Note that the ion bombardment apparatus 1 shown in each figure is an example of the ion bombardment apparatus according to this embodiment, and the ion bombardment apparatus according to the present invention is not limited to those shown in each figure. As an example, the ion bombardment apparatus 1 cleans (purifies) the surface of a workpiece W made of stainless steel.

[0032] The ion bombardment apparatus 1 comprises a vacuum chamber 2, a rotary table 11 (substrate support section), a bias power supply 18, a plasma generator 19 including a filament 3 and a discharge power supply 22, a filament heating power supply 3T, and a magnetic field generation mechanism 20.

[0033] The vacuum chamber 2 houses a rotary table 11 and a plurality of workpieces W placed on the rotary table 11. Although not shown in Figure 1, a plurality of workpiece holders may be fixed on the rotary table 11, and the workpieces W may be supported by each workpiece holder. Inside the vacuum chamber 2, a cylindrical internal space S is formed, having a center line extending in the vertical direction.

[0034] The internal space S of the vacuum chamber 2 (i.e., the space containing the rotary table 11 and the multiple workpieces W) is maintained in a vacuum or near-vacuum state by a vacuum pump (not shown) during the vacuum process, heating process, and etching process described later. Although not shown, the vacuum chamber 2 is equipped with an inlet for introducing argon gas, which is used as an inert gas in the etching process, into the vacuum chamber 2, and an outlet for discharging the argon gas from the vacuum chamber 2 to the outside.

[0035] The rotary table 11 is positioned in the internal space of the vacuum chamber 2 and supports multiple workpieces W. In this embodiment, the rotary table 11 has a disc shape in plan view (Figure 2). During the etching process, the rotary table 11 rotates around its central axis while supporting multiple workpieces W. The rotary table 11 may further include a rotating base on which each of the multiple workpieces W is individually positioned so that each of the multiple workpieces W can rotate on its own axis. The area of ​​the internal space S of the vacuum chamber 2 occupied by the workpieces W supported by the rotary table 11 is referred to as the processing space WA (Figure 3).

[0036] The bias power supply 18 applies a negative bias voltage to each of the multiple workpieces W via the rotary table 11. The negative bias voltage is applied during the etching process.

[0037] The plasma generator 19 includes a filament 3 and a discharge power supply 22. The plasma generator 19 generates plasma in the internal space of the vacuum chamber 2.

[0038] The filament 3 extends vertically (in a predetermined extension direction) within the internal space S of the vacuum chamber 2 and is positioned to face the workpiece W on the rotary table 11. Although one filament 3 is shown in Figure 1, in this embodiment, as shown in Figures 2 and 3, two filaments 3 are arranged as a pair. Specifically, the filament 3 has a first filament 3A and a second filament 3B. The second filament 3B is positioned together with the first filament 3A in a direction perpendicular to the vertical direction (in this embodiment, the front-to-back direction) so as to sandwich the workpiece W on the rotary table 11 from both sides. In other words, in this embodiment, the first filament 3A and the second filament 3B are positioned on opposite sides of the disc-shaped rotary table 11 (with a 180-degree gap in the circumferential direction).

[0039] As shown in Figure 3, each filament 3 (first filament 3A, second filament 3B) includes an upper end 31 (one end), a lower end 32 (the other end opposite to the one end in the direction of extension of the filament 3), and an intermediate portion 33 positioned between the upper end 31 and the lower end 32. Each filament 3 functions as a cathode.

[0040] On the other hand, in this embodiment, the vacuum chamber 2 functions as an anode. This function is achieved by arranging the vacuum chamber 2 so that its inner wall surface is exposed to the internal space S. Note that, as described later, other anodes may be placed in the internal space S of the vacuum chamber 2.

[0041] The discharge power supply 22 applies a discharge voltage between each filament 3 and the vacuum chamber 2 acting as an anode, generating plasma in the internal space S.

[0042] The filament heating power supply 3T heats the filaments 3 by applying a heating voltage between the upper end 31 and the lower end 32 of each filament 3 (first filament 3A, second filament 3B). As shown in Figure 3, a pair of filament electrodes 3S (electrodes) are connected to the upper end 31 and the lower end 32. In Figure 3, the filament heating power supply 3T is schematically shown, but the filament heating power supply 3T is electrically connected to the pair of filament electrodes 3S and applies a heating voltage to the filaments 3.

[0043] In the plasma generator 19, a discharge voltage from the discharge power supply 22 is applied to each filament 3, causing a glow discharge. This glow discharge generates plasma of argon gas introduced into the internal space S of the vacuum chamber 2 around each filament 3. The argon ions (inert gas ions) in this plasma are accelerated toward the workpiece W facing the filament 3 by applying a negative bias voltage to each of the multiple workpieces W. As a result, argon ions can be made to collide with each of the multiple workpieces W. Furthermore, the filament heating power supply 3T heats each filament 3, causing electrons (thermionic electrons) to be emitted from the filament 3 and maintaining the discharge.

[0044] The magnetic field generation mechanism 20 increases the density of the plasma generated around each filament 3 and improves its uniform distribution by generating a magnetic field around each filament 3. In this embodiment, the magnetic field generation mechanism 20 includes a first magnetic field generation mechanism 20A and a second magnetic field generation mechanism 20B. The first magnetic field generation mechanism 20A generates a magnetic field around the first filament 3A. The second magnetic field generation mechanism 20B is positioned together with the first magnetic field generation mechanism 20A in a direction perpendicular to the vertical direction so as to sandwich multiple workpieces W from both sides, and generates a magnetic field around the second filament 3B. Note that the magnetic field generation mechanism 20 may have only the first magnetic field generation mechanism 20A and not the second magnetic field generation mechanism 20B. On the other hand, having both the first magnetic field generation mechanism 20A and the second magnetic field generation mechanism 20B can increase the processing speed for the workpieces W. In addition, since the time that the workpieces W are in contact with the plasma during the rotation of the rotary table 11 can be increased, it is possible to prevent minute impurities contained in the internal space S from adhering to the workpieces W.

[0045] Each magnetic field generating mechanism 20 (first magnetic field generating mechanism 20A, second magnetic field generating mechanism 20B) is positioned on the opposite side of the filament 3 from the workpiece W. More specifically, the first magnetic field generating mechanism 20A is positioned on the opposite side of the first filament 3A from the workpiece W. Similarly, the second magnetic field generating mechanism 20B is positioned on the opposite side of the second filament 3B from the workpiece W. In other words, each magnetic field generating mechanism 20 is positioned behind each filament 3 as viewed from the workpiece W.

[0046] Each magnetic field generation mechanism 20 includes a plurality of electromagnetic coils 200 and a coil power supply 20S. Specifically, each magnetic field generation mechanism 20 has an upper electromagnetic coil 201 (first magnetic field generation unit), a lower electromagnetic coil 202 (second magnetic field generation unit), and a middle electromagnetic coil 203 (intermediate magnetic field generation unit). The coil power supply 20S generates magnetic fields around the filament 3 by supplying current to each electromagnetic coil. In this embodiment, each electromagnetic coil 200 is located outside the vacuum chamber 2, and forms a magnetic field in the internal space S via the vacuum chamber 2. In other embodiments, each electromagnetic coil 200 may be located in the internal space S. In addition, there may be multiple intermediate magnetic field generation units, such as the middle electromagnetic coil 203.

[0047] The upper electromagnetic coil 201 generates a first magnetic field in the region including the upper end 31 of the corresponding filament 3. The lower electromagnetic coil 202 generates a second magnetic field in the region including the lower end 32 of the corresponding filament 3. Furthermore, the middle electromagnetic coil 203 is positioned vertically between the upper electromagnetic coil 201 and the middle electromagnetic coil 203, and generates an intermediate magnetic field in the region including the middle portion 33 of the corresponding filament 3. In Figure 3, the coil power supply 20S is connected only to the upper electromagnetic coil 201 of the first magnetic field generation mechanism 20A, but the coil power supply 20S can also be connected to each electromagnetic coil of the first magnetic field generation mechanism 20A and the second magnetic field generation mechanism 20B, allowing current to flow in a predetermined direction according to the polarity of the corresponding magnetic field. Independent coil power supplies may also be provided for each electromagnetic coil.

[0048] Furthermore, each of the electromagnetic coils, the upper electromagnetic coil 201, the lower electromagnetic coil 202, and the middle electromagnetic coil 203, has a center line that is perpendicular to the vertical direction and extends in the direction (front-to-back direction) connecting each electromagnetic coil 200 to the workpiece W. Each electromagnetic coil is constructed by winding a coil wire (not shown) around the center line. Moreover, in this embodiment, as shown in Figure 3, in each magnetic field generation mechanism 20, the upper electromagnetic coil 201 and the lower electromagnetic coil 202 are arranged to surround a pair of filament electrodes 3S, respectively. Therefore, using each filament electrode 3S connected to the end of the filament 3 as a guide, a magnetic field can be formed with high precision around the upper end 31 and the lower end 32.

[0049] In this embodiment, as an example, the polarities of the upper electromagnetic coil 201, lower electromagnetic coil 202, and middle electromagnetic coil 203 in each electromagnetic coil 200 are the same. In Figure 3, in the upper electromagnetic coil 201 of the first magnetic field generation mechanism 20A, magnetic field lines are formed that extend forward from the upper end 31 of the first filament 3A. The same applies to the lower electromagnetic coil 202. Although the direction of the magnetic field lines is not shown, the same applies to the middle electromagnetic coil 203.

[0050] Furthermore, in Figure 3, in the upper electromagnetic coil 201 of the second magnetic field generation mechanism 20B, magnetic field lines are formed that extend forward from the upper end 31 of the second filament 3B. The same is true for the lower electromagnetic coil 202. Although the direction of the magnetic field lines is not shown, the same is true for the middle electromagnetic coil 203. In this case, as viewed from the workpiece W placed in the processing space WA, the direction of the magnetic field lines formed by each electromagnetic coil 200 of the first magnetic field generation mechanism 20A is opposite to the direction of the magnetic field lines formed by each electromagnetic coil 200 of the second magnetic field generation mechanism 20B. That is, in the example shown in Figure 3, the polarity of the three upper and lower electromagnetic coils 200 of the first magnetic field generation mechanism 20A is the same, and the polarity of the three upper and lower electromagnetic coils 200 of the second magnetic field generation mechanism 20B is also the same. On the other hand, the polarity between the electromagnetic coils 200 of the first magnetic field generation mechanism 20A and the second magnetic field generation mechanism 20B is different (opposite).

[0051] The polarity relationship of the electromagnetic coils 200 of each magnetic field generating mechanism 20 is not limited to the above. More preferable polarities and the relationship of the magnitudes of the magnetic forces between each electromagnetic coil 200 will be described in detail in the embodiments described later.

[0052] Next, an overview of the ion bombardment process in the ion bombardment apparatus 1 described above will be explained. The ion bombardment process according to the present invention includes a preparation step, a vacuum step, a heating step, and an etching step.

[0053] First, a preparation step is performed by setting the workpiece W on the rotary table 11 inside the vacuum chamber 2. As mentioned above, in the preparation step, multiple workpieces W may be supported in each of multiple workpiece holders, and then these multiple workpiece holders may be placed on the rotary table 11.

[0054] Once the preparation process is complete, the vacuum process is carried out. The vacuum process is a process of maintaining the inside of the vacuum chamber 2 in a vacuum or near-vacuum state using a vacuum pump (not shown). The pressure inside the vacuum chamber 2 during the vacuum process is, for example, 0.0001 to 0.01 Pa.

[0055] After the vacuum process is completed, a heating process is carried out. The heating process involves heating each of the multiple workpieces W at a predetermined temperature for a predetermined time. The temperature of each of the multiple workpieces W in the heating process is, for example, 50 to 300°C. The heating time for each of the multiple workpieces W in the heating process is, for example, 0.5 to 2 hours.

[0056] Once the heating process is complete, the etching process is carried out. The etching process involves etching the surface of each of the multiple workpieces W. Specifically, it is carried out as follows.

[0057] First, argon gas is introduced into the vacuum chamber 2. The amount of argon gas introduced into the vacuum chamber 2 is, for example, 50 to 500 ml / min. At this time, the pressure inside the vacuum chamber 2 is, for example, 0.5 to 2.0 Pa.

[0058] By introducing argon gas into the vacuum chamber 2, the filaments 3 are heated by the filament heating power supply 3T, and a high voltage from the discharge power supply 22 is applied to each filament 3, thereby generating a glow discharge between the vacuum chamber 2 and the filaments 3. The high voltage applied to the filaments 3 is, for example, 40 to 100V. The heating of the filaments 3 promotes the emission of thermionic electrons for the glow discharge.

[0059] The glow discharge described above generates an argon gas plasma around the filament 3. The plasma contains argon ions. In this state, by applying a negative bias voltage from the bias power supply 18, the argon ions in the plasma are accelerated toward the workpieces W located in front of (radially inward of) each filament 3. This allows argon ions to collide with each of the multiple workpieces W. As a result, the surface of each of the multiple workpieces W can be etched.

[0060] In particular, in this embodiment, each magnetic field generating mechanism 20 is positioned behind each filament 3 as viewed from the workpiece W. The electromagnetic coil 200 of the magnetic field generating mechanism 20 forms a strong magnetic field around the filament 3, especially around the upper end 31 and the lower end 32. The temperature of the filament 3, which is heated by receiving current from the filament heating power supply 3T, tends to be higher in the middle section 33 than at the upper end 31 and the lower end 32. As a result, the plasma density around the filament 3 also tends to be higher in the central part. However, under the influence of the magnetic field as described above, the plasma density around the upper end 31 and the lower end 32 is increased, and a more uniform plasma distribution with less variation can be formed in the vertical direction (the direction in which the filament 3 extends). As a result, even in multiple workpieces W arranged in the processing space WA on the rotary table 11, the variation in the amount of etching in the vertical direction can be reduced. Furthermore, by positioning the intermediate electromagnetic coil 203 between the upper electromagnetic coil 201 and the lower electromagnetic coil 202, it is possible to suppress the relative reduction of the plasma density around the intermediate section 33 due to the influence of the upper electromagnetic coil 201 and the lower electromagnetic coil 202, thereby further reducing the variation in plasma density. [Examples]

[0061] Next, the embodiment of the present invention described above will be further explained based on examples. Note that the present invention is not limited to the following examples. Each experiment involved etching (ion bombardment) of the workpiece W for a predetermined time under the following experimental conditions. <Comparative experiment> Example 1 (Formation of upper and lower magnetic fields with the same polarity): A first magnetic field generating mechanism 20A is placed inside a vacuum chamber 2. The upper electromagnetic coil 201 and the lower electromagnetic coil 202 form a magnetic field with the same polarity (south pole) around the filament 3. A current of 8A is passed through the upper electromagnetic coil 201 and the lower electromagnetic coil 202. No current is passed through the middle electromagnetic coil 203, so the middle electromagnetic coil 203 does not form a magnetic field.

[0062] Example 2 (Formation of Upper, Middle, and Lower Identical Magnetic Fields): A first magnetic field generation mechanism 20A is placed inside a vacuum chamber 2. The upper electromagnetic coil 201, lower electromagnetic coil 202, and middle electromagnetic coil 203 form an isopolar (south pole) magnetic field around the filament 3. A current of 8A is passed through the upper electromagnetic coil 201, lower electromagnetic coil 202, and middle electromagnetic coil 203. Although not particularly limited, in this case, the number of turns in the upper, lower, and middle electromagnetic coils is assumed to be the same.

[0063] Example 3 (Formation of same-polarity magnetic fields in upper, middle, and lower sections, weakened middle magnetic field): The first magnetic field generating mechanism 20A is placed inside the vacuum chamber 2. The upper electromagnetic coil 201, the lower electromagnetic coil 202, and the middle electromagnetic coil 203 form a same-polarity (south pole) magnetic field around the filament 3. A current of 8A is passed through the upper electromagnetic coil 201 and the lower electromagnetic coil 202, and a current of 4A is passed through the middle electromagnetic coil 203. Although not particularly limited, in this case, the number of turns in the upper, lower, and middle electromagnetic coils is assumed to be the same.

[0064] Example 4 (Formation of same polarity magnetic fields in the upper and lower sections, opposite polarity magnetic fields in the middle section, weakened magnetic field in the middle section): The first magnetic field generating mechanism 20A is placed inside the vacuum chamber 2. The upper electromagnetic coil 201 and the lower electromagnetic coil 202 form a magnetic field of the same polarity (south pole) around the filament 3, and the middle electromagnetic coil 203 forms a magnetic field of opposite polarity (north pole) to the upper electromagnetic coil 201 and the lower electromagnetic coil 202. A current of 8A is passed through the upper electromagnetic coil 201 and the lower electromagnetic coil 202, and a current of 4A is passed through the middle electromagnetic coil 203. Although not particularly limited, in this case, the number of turns is assumed to be the same for all of the upper, lower, and middle electromagnetic coils.

[0065] Comparative Example 1 (No Magnetic Field): Ion bombardment is performed without placing the first magnetic field generating mechanism 20A inside the vacuum chamber 2.

[0066] Comparative Example 2 (Middle magnetic field only, no upper or lower magnetic fields): The first magnetic field generating mechanism 20A is placed inside the vacuum chamber 2, but a current of 8A is passed only through the middle electromagnetic coil 203 to form a magnetic field of a predetermined polarity (south pole), and no magnetic fields are formed by the upper electromagnetic coil 201 and the lower electromagnetic coil 202.

[0067] Figure 4 is a graph showing the distribution of etching amounts of workpiece W in Example 1 and Comparative Example 1. In Figure 4, the horizontal axis represents the height of the etching measurement points, and the vertical axis represents the etching amount (depth) at each measurement point. The height of the measurement points on the horizontal axis represents the relative vertical position of each measurement point with respect to the rotary table 11, with the vertical center of workpiece W set to zero. Furthermore, in the etching amount on the vertical axis, the data at the bottom is shown to represent a larger etching amount (amount removed) than the data at the top, making it easier to visually recognize the amount of material removed from workpiece W. The same applies to the figures described later.

[0068] As shown in Figure 4, when no magnetic field is formed around the filament 3 (Comparative Example 1), the etching amount in the central part (intermediate part 33) is greater (deeper) than that in the upper end 31 and lower end 32, depending on the temperature distribution of the filament 3, resulting in large variations in the etching amount. On the other hand, when a magnetic field is formed at the upper and lower ends of the filament 3 by the upper electromagnetic coil 201 and the lower electromagnetic coil 202 (Example 1), the etching amount in the upper end 31 and lower end 32 increases, while the etching amount in the intermediate part 33 decreases slightly, resulting in improved uniformity in the vertical direction compared to Comparative Example 1. Furthermore, the increased plasma density due to the magnetic field can increase the average etching amount on the workpiece W.

[0069] Figure 5 is a graph showing the etching amount distribution of the workpiece W in Example 1 and Example 2. As shown in Figure 5, when current is passed through the middle electromagnetic coil 203 to form a magnetic field that extends throughout the vertical direction around the filament 3 (Example 2), the uniformity of the etching amount in the vertical direction can be further improved compared to Example 1. In addition, the overall plasma density increases due to such a magnetic field, which can further increase the average etching amount on the workpiece W.

[0070] Figure 6 is a graph showing the etching amount distribution of the workpiece W in Examples 2 and 3. As shown in Figure 6, compared to Example 2, in which a good etching distribution as described above can be formed, when the current flowing into the middle electromagnetic coil 203 is relatively weakened compared to the upper electromagnetic coil 201 and the lower electromagnetic coil 202 (Example 3), the etching amount in the intermediate section 33 actually increases, and the uniformity of the etching amount in the vertical direction can be further improved compared to Example 2. Thus, it is presumed that by weakening the magnetic field strength in the intermediate section 33 of the filament 3, where the temperature tends to be relatively high, the balance of the magnetic field between the upper end 31 and the lower end 32 is improved, and the uniformity of the plasma density is increased.

[0071] Figure 7 is a graph showing the etching amount distribution of the workpiece W in Examples 3 and 4. As shown in Figure 7, compared to Example 3, which was able to form the good etching distribution described above, when the polarity of the magnetic field by the middle electromagnetic coil 203 was reversed, the etching amount at the upper end 31 and lower end 32 of the filament 3 decreased, resulting in a slight deterioration in uniformity. This result is presumed to be because the magnetic fields between the upper electromagnetic coil 201 and the middle electromagnetic coil 203, and between the lower electromagnetic coil 202 and the middle electromagnetic coil 203, attract each other, causing a slight disruption in the uniformity of the plasma density. However, even in Example 4, the uniformity in the vertical direction was improved compared to Comparative Example 1 (Figure 4). Similarly, by increasing the plasma density, the average etching amount on the workpiece W can be increased.

[0072] Figure 8 is a graph showing the etching amount distribution of the workpiece W in Example 3 and Comparative Example 1. Comparing Example 3 with Comparative Example 1 in the same graph, it can be seen that the uniformity of the etching amount in the vertical direction is greatly improved. In addition, in Example 3, the average etching amount on the workpiece W can be increased by increasing the plasma density due to the influence of the magnetic field.

[0073] Figure 9 is a graph showing the distribution of etching amounts of the workpiece W in Comparative Examples 1 and 2, which are compared with each example. When forming a magnetic field around the filament 3, it is desirable to form the magnetic field at the upper end 31 and lower end 32, where the temperature tends to be relatively lower than that of the intermediate part 33. It was found that when a magnetic field is formed only at the intermediate part 33, as in Comparative Example 2 in Figure 9, an increase in etching amount can be expected compared to Comparative Example 1, but it is difficult to obtain improved uniformity (reduction of variation).

[0074] <Simulation Results> Next, embodiments included in the present invention will be described based on the magnetic field distribution in the vacuum chamber 2. Figure 10 is a plan view showing the magnetic field distribution around the workpiece W in each embodiment of the present invention, and shows the magnetic field distribution based on magnetic field analysis simulation. In Figure 10, the magnetic field distribution A1 in Embodiment 5 is shown on the upper side and the magnetic field distribution A2 in Embodiment 6 is shown on the lower side, with a reference line CL extending in the front-to-back direction and passing through each filament 3. The conditions in Embodiments 5 and 6 are as follows.

[0075] Example 5: A first magnetic field generation mechanism 20A and a second magnetic field generation mechanism 20B are placed inside a vacuum chamber 2. In the first magnetic field generation mechanism 20A, the upper electromagnetic coil 201, the lower electromagnetic coil 202, and the middle electromagnetic coil 203 form a magnetic field of the same polarity (south pole) around the filament 3. A current of 8A is passed through the upper electromagnetic coil 201, the lower electromagnetic coil 202, and the middle electromagnetic coil 203. On the other hand, in the second magnetic field generation mechanism 20B, the upper electromagnetic coil 201, the lower electromagnetic coil 202, and the middle electromagnetic coil 203 form a magnetic field of the same polarity (north pole) around the filament 3. A current of 8A is passed through the upper electromagnetic coil 201, the lower electromagnetic coil 202, and the middle electromagnetic coil 203. Note that the polarity of the three electromagnetic coils 200 of the first magnetic field generation mechanism 20A and the polarity of the three electromagnetic coils 200 of the second magnetic field generation mechanism 20B are different from each other.

[0076] Example 6: A first magnetic field generation mechanism 20A and a second magnetic field generation mechanism 20B are respectively placed inside the vacuum chamber 2. In the first magnetic field generation mechanism 20A, the upper electromagnetic coil 201, the lower electromagnetic coil 202, and the middle electromagnetic coil 203 form a magnetic field of the same polarity (south pole) around the filament 3. A current of 8A is passed through the upper electromagnetic coil 201, the lower electromagnetic coil 202, and the middle electromagnetic coil 203. On the other hand, in the second magnetic field generation mechanism 20B, the upper electromagnetic coil 201, the lower electromagnetic coil 202, and the middle electromagnetic coil 203 form a magnetic field of the same polarity (south pole) around the filament 3. A current of 8A is passed through the upper electromagnetic coil 201, the lower electromagnetic coil 202, and the middle electromagnetic coil 203. Note that the polarity of the three electromagnetic coils 200 of the first magnetic field generation mechanism 20A and the polarity of the three electromagnetic coils 200 of the second magnetic field generation mechanism 20B are the same.

[0077] Referring to Figure 10, in the magnetic field distribution A1 of Example 5, the magnetic field polarity of the first magnetic field generation mechanism 20A and the magnetic field polarity of the second magnetic field generation mechanism 20B are different (opposite), so a magnetic field is formed between them such that the magnetic field lines are connected. As a result, this magnetic field acts to envelop the processing space WA containing the workpiece W from the radial outside to the inside, making it possible to continuously expose the workpiece W, which revolves due to the rotation of the rotary table 11, to the plasma. On the other hand, in the magnetic field distribution A2 of Example 6, the magnetic field polarity of the first magnetic field generation mechanism 20A and the magnetic field polarity of the second magnetic field generation mechanism 20B are the same, and a repulsive magnetic field is formed between them, so a magnetic field that envelops the processing space WA as described above is not formed. However, even in this case, the uniformity of the plasma density in the vertical direction around the filament 3 can be improved by each magnetic field generation mechanism, and a stable etching process can be achieved for the workpiece W.

[0078] As described above, in the ion bombardment apparatus 1 according to the present invention, at least one magnetic field generating mechanism 20 is arranged on the side opposite to the workpiece W with respect to the filament 3. The magnetic field generating mechanism 20 has at least an upper electromagnetic coil 201 and a lower electromagnetic coil 202.

[0079] With this configuration, the plasma density in the regions facing the upper end 31 and lower end 32 of the filament 3 can be strengthened by the first magnetic field from the upper electromagnetic coil 201 and the second magnetic field from the lower electromagnetic coil 202, thereby reducing variations in plasma density in the extension direction of the filament 3. As a result, it becomes possible to reduce variations in the amount of etching on the surface of the workpiece W in the extension direction.

[0080] Furthermore, in this embodiment, in the processing direction which is perpendicular to the extension direction and connects the magnetic field generation mechanism 20 and the workpiece W, the upper electromagnetic coil 201 and the lower electromagnetic coil 202 have the same polarity as each other, such that the direction of the magnetic field lines included in the first magnetic field and passing through the upper end portion 31 is the same as the direction of the magnetic field lines included in the second magnetic field and passing through the lower end portion 32.

[0081] With this configuration, the polarities of the first and second magnetic fields formed around the upper end 31 and lower end 32 of the filament 3 are the same, thus approximating the magnetic field shapes of the regions corresponding to both ends of the filament 3 and further reducing the variation in plasma density in the extension direction of the filament 3. Furthermore, even when the length of the filament 3 is relatively short, it is possible to suppress the formation of strong magnetic field lines that attract each other in the vertical direction between the first and second magnetic fields, thereby stabilizing the plasma distribution in the extension direction.

[0082] Furthermore, in this embodiment, the filament 3 further includes an intermediate portion 33 positioned between the upper end portion 31 and the lower end portion 32, and the magnetic field generating mechanism 20 further includes an intermediate electromagnetic coil 203. The intermediate electromagnetic coil 203 is positioned between the upper electromagnetic coil 201 and the lower electromagnetic coil 202 in the extension direction and generates an intermediate magnetic field in the region including the intermediate portion 33 of the filament 3.

[0083] With this configuration, the intermediate magnetic field of the intermediate electromagnetic coil 203 can prevent large fluctuations in the plasma density in the region facing the intermediate portion 33 of the filament 3 as the first and second magnetic fields are formed, and it can also stabilize the magnetic field distribution in the extending direction around the filament 3.

[0084] Furthermore, in this embodiment, it is desirable that the upper electromagnetic coil 201, the lower electromagnetic coil 202, and the middle electromagnetic coil 203 have the same polarity so that in the processing direction (front-to-back direction), the direction of the magnetic field lines included in the first magnetic field and passing through one end, the direction of the magnetic field lines included in the second magnetic field and passing through the other end, and the direction of the magnetic field lines included in the intermediate magnetic field and passing through the intermediate part are all the same.

[0085] With this configuration, the magnetic field distribution in the extension direction around the filament 3 can be stabilized by aligning the direction of magnetic field lines at the upper end 31, middle section 33, and lower end 32 of the filament 3. As a result, the plasma distribution in the extension direction can be stabilized, and the variation in the amount of etching on the surface of the workpiece W can be further reduced.

[0086] Furthermore, in this embodiment, the magnetic force of the middle electromagnetic coil 203 may be set to be smaller than the magnetic forces of the upper electromagnetic coil 201 and the lower electromagnetic coil 202.

[0087] With this configuration, the magnetic field strength around the intermediate portion 33, which tends to be relatively hotter in the filament 3 compared to the upper portion 31 and lower portion 32, is relatively weakened, thereby further stabilizing the plasma distribution in the extension direction.

[0088] Furthermore, in this embodiment, it is desirable that the magnetic field generation mechanism 20 includes a first magnetic field generation mechanism 20A and a second magnetic field generation mechanism 20B.

[0089] With this configuration, two plasma regions are formed by two filaments 3 arranged around the workpiece W, thereby promoting ion bombardment (etching) of the workpiece W. Furthermore, by providing each filament 3 with its own magnetic field generation mechanism 20 (20A, 20B), it is possible to improve the density and uniformity of the plasma in the extension direction, and to reduce variations in the distribution of etching amount on the workpiece W.

[0090] Furthermore, in this embodiment, the upper electromagnetic coil 201 and the lower electromagnetic coil 202 of the first magnetic field generating mechanism 20A have the same polarity so that, in the direction perpendicular to the extension direction of the first filament 3A and connecting the first magnetic field generating mechanism 20A and the workpiece W, the direction of the magnetic field lines included in the first magnetic field of the first magnetic field generating mechanism 20A and passing through the upper end portion 31 of the first filament 3A is the same as the direction of the magnetic field lines included in the second magnetic field of the first magnetic field generating mechanism 20A and passing through the lower end portion 32 of the first filament 3A. Furthermore, the upper electromagnetic coil 201 and lower electromagnetic coil 202 of the first magnetic field generating mechanism 20A and the upper electromagnetic coil 201 and lower electromagnetic coil 202 of the second magnetic field generating mechanism 20B have opposite polarities.

[0091] With this configuration, by reversing the polarity of the magnetic fields of the two magnetic field generating mechanisms 20A and 20B, magnetic field lines that attract each other are formed between the two magnetic fields (magnetic field distribution A1 in Figure 10), making it possible to perform a stable etching process on the workpiece W.

[0092] Furthermore, in this embodiment, the upper electromagnetic coil 201 and the lower electromagnetic coil 202 are each composed of electromagnetic coils having a center line that is perpendicular to the extension direction of the filament 3 and extends in the direction connecting the magnetic field generation mechanism 20 and the workpiece W, and the ion bombardment apparatus 1 further includes a coil power supply 20S that generates the first magnetic field and the second magnetic field, respectively, by passing current through the magnetic field generation mechanism 20, the upper electromagnetic coil 201 and the lower electromagnetic coil 202.

[0093] With this configuration, the coil power supply 20S supplies current to each electromagnetic coil, making it easy to form a magnetic field around the upper end 31 and the lower end 32 of the filament 3.

[0094] Furthermore, in this embodiment, the ion bombardment apparatus 1 has a pair of upper and lower filament electrodes 3S. The upper electromagnetic coil 201 and the lower electromagnetic coil 202 are arranged to surround the pair of filament electrodes 3S, respectively.

[0095] With this configuration, by positioning each electromagnetic coil 200 using the pair of filament electrodes 3S connected to the upper end 31 and lower end 32 of the filament 3 as landmarks, a magnetic field can be reliably formed around the upper end 31 and lower end 32 of the filament 3.

[0096] Furthermore, the ion bombardment treatment method according to this embodiment is a method for cleaning the surface of a workpiece W. The treatment method involves supporting the workpiece W with a rotary table 11 arranged in the internal space S of a vacuum chamber 2, arranging at least one filament 3 in the internal space S so as to extend in a predetermined extension direction and face the workpiece W, and installing at least one magnetic field generating mechanism 20 arranged on the opposite side of the workpiece W from the filament 3, the mechanism including an upper electromagnetic coil 201 that generates a first magnetic field in a region including the upper end portion 31 of the at least one filament 3, and an upper electromagnetic coil 201 that generates a second magnetic field in a region of the at least one filament 3 including the lower end portion 32 opposite to the upper end portion 31 in the extension direction, and the The method comprises: applying a heating voltage between the upper end 31 and lower end 32 of at least one filament 3 to heat the at least one filament; applying a discharge voltage between an anode (vacuum chamber 2) arranged to be exposed to the internal space S and the at least one filament 3; generating plasma by applying a discharge voltage between the heated at least one filament 3 and the anode, and cleaning the surface of the workpiece W by irradiating the surface of the workpiece W with ions contained in the plasma while increasing the density of the plasma around the upper end 31 and lower end 32 of the at least one filament 3 using at least the first magnetic field and the second magnetic field.

[0097] According to this method, the plasma density in the regions facing the upper end 31 and lower end 32 of the filament 3 can be strengthened by the first magnetic field from the upper electromagnetic coil 201 and the second magnetic field from the lower electromagnetic coil 202, thereby reducing variations in plasma density in the extension direction of the filament 3. As a result, it becomes possible to reduce variations in the amount of etching on the surface of the workpiece W in the extension direction. The features included in the ion bombardment apparatus 1 described above can constitute a part of the ion bombardment processing method described above.

[0098] Although embodiments of the present invention have been described in detail above, these are merely illustrative examples, and the present invention is not to be interpreted in any way as being limited by the above-described embodiments. The present invention can take the following modified embodiments.

[0099] In the present invention, the workpiece W (substrate) is not limited to being made of a conductive material, but may also be made of an insulating material. Furthermore, the filament 3 and the magnetic field generating mechanism 20 may be arranged one by one in the internal space S of the vacuum chamber 2, or three or more of each may be arranged.

[0100] Furthermore, although the above embodiment was described in which the magnetic field generating mechanism 20 has a plurality of electromagnetic coils 200, the magnetic field generating mechanism 20 may also include permanent magnets instead of electromagnetic coils as the magnetic field generating unit. In this case, ring-shaped permanent magnets may be arranged similarly to each electromagnetic coil 200, or block-shaped permanent magnets may be arranged above the upper electromagnetic coil 201, below the lower electromagnetic coil 202, etc.

[0101] Furthermore, the direction in which each filament 3 extends is not limited to the vertical direction; depending on the shape of the vacuum chamber 2 and the ion bombardment treatment applied to the filament 3, it may also extend horizontally or in other directions.

[0102] Figure 11 is a side view of an ion bombardment apparatus 1 in a modified embodiment of the present invention. In this modified embodiment, compared to the previous embodiment (Figure 1), the ion bombardment apparatus 1 has a vacuum deposition apparatus 23. The vacuum deposition apparatus 23 comprises a deposition evaporation source 24 and a deposition power supply 26, which are located in a vacuum chamber 2. The deposition evaporation source 24 can also function as an anode for the filament 3 instead of the vacuum chamber 2. Note that the deposition evaporation source 24 does not necessarily need to be positioned facing the workpiece W.

[0103] A portion of the argon ions in the plasma are accelerated toward the workpiece W located in front of the deposition evaporation source 24 by applying a negative bias voltage to each of the multiple workpieces W, thereby removing their surface. When the deposition evaporation source 24 is used as the anode of the ion bombardment apparatus 1 in this manner, a film deposition process may be performed on the workpiece W after the ion bombardment process. In this case, the deposition evaporation source 24 can be used as the cathode in the film deposition process. Furthermore, the film deposition process performed on the workpiece W after the ion bombardment process may be sputtering, arc ion plating, or other methods. [Explanation of Symbols]

[0104] 1. Ion bombardment device 11. Rotary table (base material support section) 18 Bias power supply 19 Plasma Generator 2. Vacuum chamber (anode) 20 Magnetic field generation mechanism 200 electromagnetic coils 201 Upper electromagnetic coil (first magnetic field generation section) 202 Lower electromagnetic coil ( 2nd (Magnetic field generation section) 203 Middle electromagnetic coil ( middle (Magnetic field generation section) 20A First Magnetic Field Generation Mechanism 20B Second Magnetic Field Generation Mechanism 20S Coil Power Supply 20T Filament Heating Power Supply 22 Discharge power supply 23 Vacuum deposition equipment 24. Evaporation source for film formation (anode) 26 Power supply for film formation 3 filaments 31 Upper end (one end) 32 Lower end (other end) 33 Middle section 3A First Filament 3B Second Filament 3S filament electrode 3T Filament Heating Power Supply W Work (Base Material) WA processing space

Claims

1. An ion bombardment apparatus for cleaning a substrate surface by irradiating the surface with ions, A vacuum chamber having an internal space formed inside it, A substrate support portion is arranged in the internal space and supports the substrate, At least one filament extending in a predetermined elongation direction within the internal space and positioned opposite the substrate, the filament comprising one end and the other end opposite to the one end in the elongation direction, an anode arranged to be exposed to at least the internal space, A discharge power supply that applies a discharge voltage between the at least one filament and the anode, A filament heating power supply that generates heat on the filament by applying a heating voltage between one end and the other end of at least one filament, At least one magnetic field generating mechanism, comprising one magnetic field generating mechanism disposed on the opposite side of one of the at least one filaments from the substrate, the first magnetic field generating unit that generates a first magnetic field in a region including one end of the one filament, and a second magnetic field generating unit disposed independently of the first magnetic field generating unit that generates a second magnetic field in a region including the other end of the one filament, Equipped with, An ion bombardment apparatus in which, in a processing direction perpendicular to the extension direction and connecting the first magnetic field generating mechanism and the substrate, the first magnetic field generating unit and the second magnetic field generating unit have the same polarity as the magnetic field lines included in the first magnetic field and passing through one end, such that the direction of the magnetic field lines included in the second magnetic field and passing through the other end is the same as the direction of the magnetic field lines included in the second magnetic field and passing through the other end.

2. The first filament further includes an intermediate portion positioned between the first end and the other end, The ion bombardment apparatus according to claim 1, wherein the first magnetic field generating mechanism further includes at least one intermediate magnetic field generating unit disposed between the first magnetic field generating unit and the second magnetic field generating unit in the extending direction, and generating an intermediate magnetic field in a region including the intermediate portion of the first filament.

3. The ion bombardment apparatus according to claim 2, wherein in a processing direction perpendicular to the extension direction and connecting the one magnetic field generating mechanism and the substrate, the first magnetic field generating unit, the second magnetic field generating unit, and the intermediate magnetic field generating unit have the same polarity so that the direction of the magnetic field lines included in the first magnetic field and passing through one end, the direction of the magnetic field lines included in the second magnetic field and passing through the other end, and the direction of the magnetic field lines included in the intermediate magnetic field and passing through the intermediate part are the same.

4. The ion bombardment apparatus according to claim 3, wherein the magnetic force of the intermediate magnetic field generating unit is set to be smaller than the magnetic forces of the first magnetic field generating unit and the second magnetic field generating unit.

5. An ion bombardment apparatus for cleaning a surface by irradiating the surface of a substrate with ions, A vacuum chamber having an internal space formed inside it, A substrate support portion is arranged in the internal space and supports the substrate, At least one filament extending in a predetermined elongation direction within the internal space and positioned opposite the substrate, the filament comprising one end and the other end opposite to the one end in the elongation direction, an anode arranged to be exposed to at least the internal space, A discharge power supply that applies a discharge voltage between the at least one filament and the anode, A filament heating power supply that generates heat on the filament by applying a heating voltage between one end and the other end of at least one filament, At least one magnetic field generating mechanism disposed on the side of the filament opposite to the substrate, comprising: a first magnetic field generating unit that generates a first magnetic field in a region including one end of the at least one filament; and a second magnetic field generating unit that generates a second magnetic field in a region including the other end of the at least one filament; Equipped with, The at least one filament is First filament and, A second filament is arranged in a direction perpendicular to the extension direction so as to sandwich the substrate from both sides together with the first filament, Includes, The aforementioned at least one magnetic field generation mechanism is A first magnetic field generating mechanism that generates a magnetic field around the first filament, A second magnetic field generating mechanism is positioned in a direction perpendicular to the extension direction, together with the first magnetic field generating mechanism, so as to sandwich the substrate from both sides, and generates a magnetic field around the second filament. Ion bombardment device, including

6. In a direction perpendicular to the extension direction and connecting the first magnetic field generating mechanism and the substrate, the direction of the magnetic field lines included in the first magnetic field generating mechanism and passing through one end of the first filament is the same as the direction of the magnetic field lines included in the second magnetic field generating mechanism and passing through the other end of the first filament, such that the first magnetic field generating part and the second magnetic field generating part of the first magnetic field generating mechanism have the same polarity. In a direction perpendicular to the extension direction and connecting the second magnetic field generating mechanism and the substrate, the direction of the magnetic field lines included in the first magnetic field of the second magnetic field generating mechanism and passing through one end of the second filament is the same as the direction of the magnetic field lines included in the second magnetic field of the second magnetic field generating mechanism and passing through the other end of the second filament, such that the first magnetic field generating part and the second magnetic field generating part of the second magnetic field generating mechanism have the same polarity. The ion bombardment apparatus according to claim 5, wherein the first magnetic field generating unit and the second magnetic field generating unit of the first magnetic field generating mechanism and the first magnetic field generating unit and the second magnetic field generating unit of the second magnetic field generating mechanism have opposite polarities to each other.

7. The first magnetic field generating section and the second magnetic field generating section of the first magnetic field generating mechanism are each composed of an electromagnetic coil having a center line that is perpendicular to the extension direction and extends in a direction connecting the first magnetic field generating mechanism and the substrate, The ion bombardment apparatus according to claim 1, wherein the first magnetic field generating mechanism further includes a coil power supply that generates the first magnetic field and the second magnetic field by passing current through the electromagnetic coil of the first magnetic field generating unit and the electromagnetic coil of the second magnetic field generating unit, respectively.

8. The filament is further provided with a pair of electrodes connected to one end and the other end, respectively, to which the heating voltage is applied. The ion bombardment apparatus according to claim 7, wherein the electromagnetic coil of the first magnetic field generating unit is arranged to surround one of the pair of electrodes, and the electromagnetic coil of the second magnetic field generating unit is arranged to surround the other electrode of the pair of electrodes.

9. An ion bombardment treatment method for cleaning the surface of a substrate, The substrate is supported by a substrate support part arranged in the internal space of the vacuum chamber, In the aforementioned internal space, at least one filament is arranged to extend in a predetermined direction and face the substrate, At least one magnetic field generating mechanism, comprising one magnetic field generating mechanism positioned on the opposite side of the substrate to one of the at least one filaments, comprising: a first magnetic field generating unit that generates a first magnetic field in a region including one end of the one filament; and a second magnetic field generating unit positioned independently of the first magnetic field generating unit and that generates a second magnetic field in a region including the other end of the one filament opposite to the one end in the extension direction, wherein the first magnetic field generating unit and the second magnetic field generating unit have the same polarity to each other, such that in a processing direction perpendicular to the extension direction and connecting the one magnetic field generating mechanism and the substrate, the direction of magnetic field lines included in the first magnetic field and passing through the one end is the same as the direction of magnetic field lines included in the second magnetic field and passing through the other end. The process involves applying a heating voltage between one end and the other end of the at least one filament to generate heat in the at least one filament, A discharge voltage is applied between the anode, which is positioned to be exposed to at least the internal space, and the at least one filament to generate plasma, An ion bombardment method comprising: increasing the density of the plasma around one end and the other end of the one filament using at least the first magnetic field and the second magnetic field, and cleaning the surface of the substrate by irradiating the surface of the substrate with ions contained in the plasma.

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