Light-emitting device

Abstract

Providing a display device or the like with a novel configuration in which the gate capacitance of a transistor connected to a scanning line is reduced. Or, providing a display device or the like with a novel configuration in which the resistance of a scanning line is reduced. Or, providing a display device or the like with a novel configuration in which pixels can be arranged with high definition. Or, providing a display device or the like with a novel configuration in which an increase in manufacturing cost is suppressed. [Solution] In a transistor having a first gate electrode and a second gate electrode connected to a scanning line, the first gate electrode is formed of a low-resistance metal material, and the second gate electrode is formed of a metal oxide material capable of reducing the oxygen deficiency of an oxide semiconductor layer. The first gate electrode is connected to the scanning line, and the second gate electrode is connected to a wiring to which a constant potential is applied. ​

Description

[Technical Field]

[0001] One aspect of the present invention relates to a display device equipped with a transistor having an oxide semiconductor. .

[0002] Furthermore, one aspect of the present invention is not limited to the above-mentioned technical field. One aspect of the technical field relates to a product, method, or method of manufacture. Alternatively, the present invention relates to a professional Seth, machine, manufacture, or composition of matter This relates to semiconductor devices, display devices, light-emitting devices, energy storage devices, and memory devices. In particular, one aspect of the present invention relates to semiconductor devices, display devices, light-emitting devices, energy storage devices, and memory devices. This relates to the placement, the driving method thereof, or the manufacturing method thereof. [Background technology]

[0003] A semiconductor layer formed on a substrate having an insulating surface is used to create a transistor (field-effect transistor). The technology for constructing FETs (also known as thin-film transistors or TFTs) is attracting attention. The transistor is used in integrated circuits (ICs) and image display devices (display devices). It is widely used in sub-devices. Silicon is used as a semiconductor layer applicable to transistors. While representative semiconductor materials are widely known, oxide semiconductors are attracting attention as another type of material. It is being done.

[0004] For example, an amorphous oxide containing In, Zn, Ga, Sn, etc. can be used as the oxide semiconductor. A technique for fabricating transistors has been disclosed (see Patent Document 1). Also, a self-aligning transistor A technique for fabricating an oxide layer transistor having a top gate structure is disclosed (Patent). (See Reference 2). Also, in order to increase the field effect mobility, the electric fields of the upper and lower gate electrodes are used to... A technique for manufacturing a transistor having a structure that electrically surrounds an oxide layer in which a channel is formed has been disclosed (see Patent Document 3).

[0005] Also, an insulating layer that releases oxygen by heating is used for the underlying insulating layer of the oxide semiconductor layer that forms the channel, and by reducing the oxygen deficiency of the oxide semiconductor layer, a technique for manufacturing a transistor with enhanced electrical reliability, such as a small shift in the threshold voltage, has been disclosed (see Patent Document 4).

Prior Art Documents

Prior Art Documents

Patent Documents

[0006]

Patent Document 1

Patent Document 2

Patent Document 3

Patent Document 4

Summary of the Invention

Problems to be Solved by the Invention

[0007] Transistors having an oxide layer are expected to be applied to display devices. Transistors are required to have high field - effect mobility and high reliability. To obtain high field - effect mobility a transistor having a structure that electrically surrounds an oxide layer in which a channel is formed is effective . However, when driving a transistor having a structure that electrically surrounds an oxide layer in which a channel is formed with a signal of a scanning line due to the electric field of the gate electrode, there is a problem that the gate capacitance of the transistor becomes too large .

[0008] To reduce gate capacitance, instead of a structure where the gate electrode surrounds the oxide layer, A single-gate structure is effective. However, to obtain high reliability, oxidation When using a gate electrode that releases oxygen upon heating, like a solid layer, as the top gate, Compared to a gate electrode made of metal, the resistance of the gate electrode, i.e., the scan line, becomes higher. That was the problem.

[0009] A configuration in which a gate electrode that releases oxygen when heated is used as the top gate is a transistor. Since this is effective in improving reliability, the resistance of the scan lines is reduced while maintaining the current configuration. To achieve this, a metal gate electrode is used as the bottom gate, and the metal on the bottom gate side A configuration in which the scan lines are formed by wiring is effective. However, the top gate and bottom gate Because the opening for connecting to it is formed in a narrow area like the pixel area, placement becomes difficult. This presented problems such as the difficulty in realizing high-definition display devices. Also, heating A configuration is also conceivable in which metal wiring is stacked on the gate electrode that releases oxygen to reduce the resistance of the scanning line. However, this presented problems such as increased manufacturing costs due to the increased number of steps involved.

[0010] In view of the above problem, one aspect of the present invention relates to a transistor connected to a scanning line whose gate capacitance is One of the objectives is to provide a display device with a reduced, novel configuration. One aspect of this invention aims to provide a display device or the like with a novel configuration in which the resistance of the scanning lines is reduced. Alternatively, one aspect of the present invention provides a novel configuration that enables the arrangement of pixels with high resolution. One of the objectives is to provide a display device, etc. Alternatively, one aspect of the present invention is to reduce the manufacturing cost. One of the objectives is to provide a display device with a novel configuration in which the increase in [amount] is suppressed.

[0011] The problems addressed by one embodiment of the present invention are not limited to those listed above. This does not preclude the existence of other issues. These other issues are described in the following section. This is an issue not mentioned in the specification. Issues not mentioned in this section can be found in the specification or by those skilled in the art. This can be derived from drawings and other descriptions, and can be extracted as appropriate from these descriptions. Furthermore, one aspect of the present invention addresses at least of the above-listed issues and / or other issues. It solves one problem. [Means for solving the problem]

[0012] One aspect of the present invention comprises a first transistor, a second transistor, a first wiring, and The first transistor has two wires and a first gate electrode and a second gate electrode. The transistor has a first semiconductor layer and a second gate electrode. It has an electrode and a second semiconductor layer, and the first wiring has a first transistor and a second The second wiring has the function of transmitting a signal that controls the conduction state of the transistor, and transmits a constant voltage. It has the function of having the first gate electrode of the first transistor and the first gate electrode of the second transistor The gate electrode is electrically connected to the first wiring and is the second gate of the first transistor. The electrode and the second gate electrode of the second transistor are electrically connected to the second wiring. The first semiconductor layer and the second semiconductor layer have oxide semiconductors, and the first transistor The gate electrode of transistor 1 and the first gate electrode of transistor 2 are made of a metallic material, The second gate electrode of the transistor and the second gate electrode of the second transistor are made of gold. This is a display device containing an oxide material.

[0013] One aspect of the present invention is a first transistor, a second transistor, and a third transistor The transistor has a first gate electrode, a first wiring, and a second wiring, and the first transistor has a first gate electrode. The transistor has a second gate electrode and a first semiconductor layer, and the second transistor has a first gate electrode. The third transistor has a first electrode, a second gate electrode, and a second semiconductor layer, It has a first gate electrode, a second gate electrode, and a third semiconductor layer, and the first wiring is The function of transmitting signals that control the conduction state of the first and second transistors. The second wiring has the function of transmitting a constant voltage, and the first gate voltage of the first transistor The pole and the first gate electrode of the second transistor are electrically connected to the first wiring, The second gate electrode of transistor 1 and the second gate electrode of transistor 2 are, Electrically connected to the second wiring, the first gate electrode of the third transistor and the third transistor The second gate electrode of the transistor is electrically connected to the first semiconductor layer and the second The semiconductor layer and the third semiconductor layer have an oxide semiconductor, and the first gate of the first transistor The first gate electrode of the second transistor and the first gate electrode of the third transistor A gate electrode is made of a metallic material and is the second gate electrode of the first transistor and the second transistor The second gate electrode of the transistor and the second gate electrode of the third transistor are made of metal oxide It is a display device that has a physical material.

[0014] One aspect of the present invention is a first transistor, a second transistor, and a third transistor It has a transistor, a capacitive element, a light-emitting element, a first wiring, and a second wiring, and the first transistor The sta has a first gate electrode, a second gate electrode, and a first semiconductor layer, and the second A transistor has a first gate electrode, a second gate electrode, and a second semiconductor layer. The third transistor has a first gate electrode, a second gate electrode, and a third semiconductor layer. The first wiring controls the conduction state of the first transistor and the second transistor. The second wiring has the function of transmitting a controlled signal, and the first trace has the function of transmitting a constant voltage. The first gate electrode of the transistor and the first gate electrode of the second transistor are connected by a first distribution The wire is electrically connected to the second gate electrode of the first transistor and the second transistor The second gate electrode is electrically connected to the second wiring and is the source of the first transistor. Alternatively, one of the drains is connected to the first gate electrode of the third transistor and one of the capacitive elements. The electrode is electrically connected to the second gate electrode of the third transistor, and the second transistor Either the source or drain of the transistor is connected to the source or drain of the third transistor. One electrode is electrically connected to the other electrode of the capacitive element and to one electrode of the light-emitting element, and the first The first semiconductor layer, the second semiconductor layer, and the third semiconductor layer each have an oxide semiconductor, and the first The first gate electrode of the transistor, the first gate electrode of the second transistor, and the third The first gate electrode of the transistor has a metallic material, and the second gate electrode of the first transistor... The electrode, the second gate electrode of the second transistor, and the second gate electrode of the third transistor A to electrode is a display device having a metal oxide material.

[0015] One aspect of the present invention has a pixel electrically connected to a first wiring and a second wiring, The pixel has a first transistor and a second transistor, and the first transistor is It has a first gate electrode, a second gate electrode, and a first semiconductor layer, and a second transistor The ZISTA has a first gate electrode, a second gate electrode, and a second semiconductor layer, and the first The wiring transmits signals that control the conduction state of the first and second transistors. The second wiring has the function of transmitting a constant voltage, and the first of the first transistor The gate electrode of the first transistor and the first gate electrode of the second transistor are electrically connected to the first wiring. The second gate electrode of the first transistor and the second gate of the second transistor are connected. The electrodes are electrically connected to the second wiring, and the first semiconductor layer and the second semiconductor layer are oxidized. It has a semiconductor material, and the first gate electrode of the first transistor and the first gate electrode of the second transistor The gate electrode of the first transistor has a metallic material and is the second gate electrode of the first transistor. The second gate electrode of a transistor is a display device made of a metal oxide material.

[0016] In one embodiment of the present invention, the oxide semiconductor comprises oxygen, in, Zn, and M (where M is Al). A display device having Ga, Y, or Sn is preferred.

[0017] In one embodiment of the present invention, the oxide semiconductor has a crystalline portion, and the crystalline portion has c-axis orientation. A display device is preferred.

[0018] In one embodiment of the present invention, the metal oxide material is oxygen, In, Zn, and M (where M is Al A display device having Ga, Y, or Sn, which has a higher carrier density than oxide semiconductors. preferable.

[0019] Further aspects of the present invention will be described in the following embodiments, and It is shown in the drawing. [Effects of the Invention]

[0020] One aspect of the present invention relates to a novel invention in which the gate capacitance of the transistor connected to the scan line is reduced. A display device with such a configuration can be provided. Alternatively, in one aspect of the present invention, the resistance of the scan line is A display device with a reduced and novel configuration can be provided. Alternatively, one aspect of the present invention is This enables the provision of a novel display device with a configuration that allows for the arrangement of pixels with high resolution. Alternatively, one aspect of the present invention relates to a display device with a novel configuration in which the increase in manufacturing costs is suppressed. We can provide the following:

[0021] The effects of one embodiment of the present invention are not limited to those listed above. This does not preclude the existence of other effects. These other effects are described in the following section. This is an effect not mentioned in the specification. Effects not mentioned in this section can be described in the specification or by those skilled in the art. This can be derived from drawings and other descriptions, and can be extracted as appropriate from these descriptions. Furthermore, one aspect of the present invention includes, among the effects listed above and / or other effects, at least It has one effect. Therefore, one aspect of the present invention may, in some cases, be the one enumerated above. It may not always have the desired effect. [Brief explanation of the drawing]

[0022] [Figure 1] A circuit diagram and timing chart of a display device according to an embodiment. [Figure 2] A top view and a cross-sectional view of a display device according to an embodiment. [Figure 3]A top view of a display device according to an embodiment. [Figure 4] A perspective view of a display device according to an embodiment. [Figure 5] A cross-sectional view of a display device according to an embodiment. [Figure 6] A top view of a display device according to an embodiment. [Figure 7] Circuit diagram of a display device according to an embodiment. [Figure 8] Circuit diagram of a display device according to an embodiment. [Figure 9] An example of the configuration of a display device according to an embodiment. [Figure 10] An example of the configuration of a display device according to an embodiment. [Figure 11] An example of the configuration of a display device according to an embodiment. [Figure 12] An example of a touch panel configuration according to an embodiment. [Figure 13] A diagram illustrating a method for manufacturing a display device according to an embodiment. [Figure 14] A diagram illustrating a method for manufacturing a display device according to an embodiment. [Figure 15] A diagram illustrating a method for manufacturing a display device according to an embodiment. [Figure 16] A diagram illustrating a method for manufacturing a display device according to an embodiment. [Figure 17] A diagram illustrating a method for manufacturing a display device according to an embodiment. [Figure 18] An electronic device according to an embodiment. [Figure 19] An electronic device according to an embodiment. [Figure 20] An electronic device according to an embodiment. [Figure 21] An electronic device according to an embodiment. [Figure 22] An electronic device according to an embodiment. [Figure 23] A diagram illustrating the energy bands in a transistor that uses an oxide semiconductor film in the channel region. [Figure 24] Circuit diagram of a display device according to an embodiment. [Figure 25] Circuit diagram of a display device according to an embodiment. [Figure 26] Block diagram and circuit diagram relating to an embodiment. [Figure 27] A top view relating to an embodiment. [Modes for carrying out the invention]

[0023] Embodiments will be described in detail with reference to the drawings. However, the present invention is not limited to the following description. Without departing from the spirit and scope of the present invention, its form and details may be modified in various ways. Those skilled in the art will readily understand what is possible. Therefore, the present invention is as shown in the following embodiments. It should not be interpreted as being limited to the contents described herein.

[0024] In the configuration of the invention described below, the same part or part having a similar function is The same reference numerals are used consistently across different drawings, and explanations of their repetition are omitted. When referring to this function, the hatching pattern is the same, and sometimes no specific sign is assigned. .

[0025] In each figure described herein, the size, layer thickness, or area of ​​each component is as follows: It may be exaggerated for clarity. Therefore, it is not necessarily limited to that scale. stomach.

[0026] In this specification, ordinal numbers such as "the first," "the second," etc., are used to avoid confusion of constituent elements. This is added for the purpose of providing a numerical limit, and is not intended to limit the number of items.

[0027] A transistor is a type of semiconductor device that amplifies current and voltage, and controls conduction or non-conductivity. It is possible to realize controlled switching operations, etc. Transistors in this specification are , IGFET(Insulated Gate Field Effect Trans istors and thin-film transistors (TFTs) ) includes.

[0028] Furthermore, the "source" and "drain" functions are used when employing transistors with different polarities. For example, the direction of the current may change during circuit operation. Therefore, in this specification, the terms "source" and "drain" may be used interchangeably. It is assumed that this is possible.

[0029] (Embodiment 1) This embodiment describes an example of the configuration of a display device according to one aspect of the present invention.

[0030] [Example of circuit diagram configuration] Figure 1(A) is a circuit diagram of the pixels in the display device.

[0031] The pixel PIX consists of transistor M1, transistor M2, transistor M3, and capacitance. It has an element C1 and a light-emitting element EL. The pixel PIX has a scan line GL, a signal line SL, and a current The supply line ANODE is connected to the wiring V0 and the common wiring CATHODE. The pixel PIX is connected to the These correspond to the sub-pixels of the pixels that perform the display. Transistors M1 to M3 are n-type Although described as a channel-type transistor, it may also be a p-channel type.

[0032] The scan line GL is the wiring that supplies the scan signal to the pixel. The scan signal is supplied by the transistor This is a signal that controls the conductivity state of the sta. The signal line SL supplies a signal to the pixel according to the image data. These are the supply lines. The current supply line ANODE and the common wiring CATHODE are light-emitting elements EL This is wiring for passing current through. Wiring V0 is wiring to which a constant voltage is supplied.

[0033] Transistors M1 and M2 have gate electrodes located above and below the semiconductor layer. The structure is such that the gate electrode, which is made of a metal material located beneath the semiconductor layer, is the first gate electrode. This is called a electrode (also called a bottom gate electrode). It is made of a metal oxide material located on the upper side of the semiconductor layer. The gate electrode that is attached is called the second gate electrode (also called the top gate electrode). Examples of transistor configurations applicable to M1 and M2 will be described later. Note that Figure 1(A ) Regarding transistor M3, it is a transistor with the same structure as transistors M1 and M2. This explanation assumes this, but it is not limited to this. Furthermore, metal oxide materials consist of a metal element and oxygen. It is a material that possesses the following properties.

[0034] The first gate electrode of transistor M1 is connected to the scan line GL. The second gate electrode of transistor M1 is connected to wiring V0. Source or Dray One end of the transistor is connected to the signal line SL. The other end is connected to the source or drain of transistor M1. This refers to the first gate and second gate electrodes of transistor M3, as well as the capacitance element C1. It is connected to one of the electrodes.

[0035] The first gate electrode of transistor M2 is connected to the scan line GL. Transistor M2 The second gate electrode of transistor M2 is connected to wiring V0. Source or Dray One end of the circuit is connected to wiring V0. The other end of the source or drain of transistor M2 is , one of the source or drain electrodes of transistor M3, the other electrode of capacitive element C1, and It is connected to one of the electrodes of the light-emitting element (EL).

[0036] The first gate electrode of transistor M3 is connected to the source or drain of transistor M1. On the other hand, the second gate electrode of transistor M3 and one electrode of capacitive element C1 are connected. The source or drain of transistor M3 is connected to the source of transistor M2. The other electrode of the drain, the other electrode of the capacitive element C1, and one electrode of the light-emitting element EL are in contact with each other. The source or drain of transistor M3 is connected to the current supply line ANODE. Connected.

[0037] One electrode of the capacitive element C1 is connected to the source or drain of the transistor M1, while the other electrode is connected to the transistor. Connected to the first gate electrode of transistor M3 and the second gate electrode of transistor M3 The other electrode of the capacitive element C1 is connected to the other side of the source or drain of the transistor M2. One of the source or drain electrodes of transistor M3 and one of the electrodes of light-emitting element EL are in contact. It will continue.

[0038] One electrode of the light-emitting element EL is connected to the source or drain of transistor M2, the other to the transistor. One of the source or drain electrodes of the converter M3 and the other electrode of the capacitive element C1 are connected. The other electrode of the light-emitting element (EL) is connected to the common wiring CATHODE.

[0039] The first gate electrode of transistor M1 and the first gate electrode of transistor M2 are in contact. The subsequent scan line GL is formed in the metallic material beneath the semiconductor layer. The first gate electrode of transistor M1 and the first gate electrode of transistor M2, and an aperture They are connected without going through a part. The second gate electrode of transistor M1 and transistor The wiring V0, to which the second gate electrode of M2 is connected, is located on the upper layer of transistors M1 and M2. It is formed of a metallic material that constitutes the conductive layer located there. Wiring V0 is the second of transistor M1 It is connected to the gate electrode and the second gate electrode of transistor M2 via an opening.

[0040] Next, Figure 1(B) shows the timing to illustrate the simple operation of the circuit in Figure 1(A). The chart is shown. In Figure 1(B), the scan selection period in the nth scan line GL(n) is ( P SCAN ) is illustrated, P SCAN In this case, the voltage of wiring V0 and the signal line SL This diagram illustrates the state of the image signal.

[0041] As shown in Figure 1(B), P SCAN In this case, the image signal of signal line SL is in the (n-1)th row. The signal switches from DATA(n-1) to the signal DATA(n) of the (n)th row. During this time, The voltage across wiring V0 is assumed to be a constant voltage V0.

[0042] In the above configuration, transistors M1 and M2 have a first gate electrode and a second gate electrode. The configuration does not connect the gate electrodes. In this configuration, when connecting the gate electrodes to each other... In comparison, the gate capacitance between the scan line GL and the transistor is formed between it and the first gate electrode. It can be done as is. Since a constant voltage is applied to wiring V0, wiring V0 and the traction The gate capacitance between transistors M1 and M2 is not an issue. Therefore, the above configuration is, Compared to connecting the gate electrodes of each other, the gate capacity between the scan line GL and the transistor The amount can be reduced. Also, by controlling the constant voltage V0 applied to the wiring V0, the transistor M It also has the effect of allowing adjustment of the threshold voltages for 1 and M2.

[0043] Furthermore, in the above configuration, in transistors M1 and M2, the first gate electrode is in the same layer as A configuration can be made in which a scanning line GL made of a metallic material is arranged. Therefore, the first The gate electrode is formed from a conductive layer made of a metallic material, and the second gate electrode is made from an oxide semiconductor. Even if a configuration is adopted in which a conductive layer is formed by a metal oxide material such as the scan line GL This avoids problems such as high resistance. Also, to lower the resistance of the scan line GL Furthermore, it reduces manufacturing costs by eliminating the need for extra wiring made of metal materials.

[0044] Furthermore, in the above configuration, the first gate electrode is formed of a conductive layer made of a metal material, and the second The gate electrode can be formed from a conductive layer composed of a metal oxide material such as an oxide semiconductor. Therefore, a gate electrode that releases oxygen upon heating is used as the second gate electrode, and the transient The reliability of the transistor can be improved. In addition, in transistors M1 and M2, Because the first gate electrode and the second gate electrode are not connected, a narrow area such as a pixel region is possible. This configuration allows for the use of gate electrodes that are not connected to each other in the same region, enabling the realization of high-definition display devices. It is possible.

[0045] [Example of transistor configuration] Here, an example of a transistor configuration applicable to transistors M1 and M2 is shown in Figure 2(A This will be explained using (C).

[0046] Figures 2(A), 2(B), and 2(C) show an example of a semiconductor device having a transistor. The transistors shown in (A) to (C) have a structure in which gate electrodes are provided above and below the semiconductor layer. That is the case.

[0047] Figure 2(A) is a top view of transistor 100, and Figure 2(B) is a single-pointed chain of Figure 2(A). Figure 2(C) is a cross-sectional view between lines X1 and X2, and Figure 2(A) is a cross-sectional view between the dashed line Y1 and Y2. This is a diagram. Note that in Figure 2(A), for clarity, components such as the insulating layer 110 have been omitted. This is illustrated in the diagram. Note that in the top view of the transistor, Figure 2( Similar to A), some components may be omitted in the illustration. Also, the dashed line X1-X The two directions are referred to as the channel length (L) direction, and the direction of the dashed line Y1-Y2 is referred to as the channel width (W) direction. It may happen.

[0048] The transistor 100 shown in Figures 2(A) to (C) is formed on a conductive layer on the substrate 102. 106, an insulating layer 104 on the conductive layer 106, and an oxide semiconductor layer 108 on the insulating layer 104. , an insulating layer 110 on the oxide semiconductor layer 108, and an oxide semiconductor layer 112 on the insulating layer 110 , insulating layer 104, oxide semiconductor layer 108, and insulating layer 116 on oxide semiconductor layer 112 , has a channel region 108 in contact with the insulating layer 110. i, a source region 108s in contact with the insulating layer 116, and a drain region in contact with the insulating layer 116. It has 108d and .

[0049] Furthermore, the transistor 100, through the opening 141a provided in the insulating layer 116, A conductive layer 120a electrically connected to region 108s and an opening provided in the insulating layer 116 A conductive layer 120b is electrically connected to the drain region 108d via the opening 141b, It may have.

[0050] The conductive layer 106 functions as the first gate electrode and is made of a metallic material. The oxide semiconductor layer 112 functions as a second gate electrode and is made of a metal oxide material. This is achieved. In addition, the insulating layer 104 functions as the first gate insulating layer, and the insulating layer 11 0 functions as a second gate insulating layer.

[0051] Furthermore, the insulating layer 116 contains either nitrogen or hydrogen, or both. By configuring 16 to have either nitrogen or hydrogen, or both, oxide semiconductors The body layer 108 and the oxide semiconductor layer 112 are supplied with either nitrogen or hydrogen, or both. They can provide it.

[0052] Examples of the insulating layer 116 include a nitride insulating layer. Using silicon nitride, silicon oxide nitride, aluminum nitride, aluminum oxide nitride, etc. It can be formed by . The hydrogen concentration contained in the insulating layer 116 is 1 × 10 22 atoms / cm 3 It is preferable if the above conditions are met.

[0053] Furthermore, the oxide semiconductor layer 112 has the function of supplying oxygen to the insulating layer 110. The semiconductor layer 112 has the function of supplying oxygen to the insulating layer 110, It becomes possible to include excess oxygen in it. Because the insulating layer 110 has an excess oxygen region, The excess oxygen is supplied to the oxide semiconductor layer 108, more specifically to the channel region 108i. This allows us to provide highly reliable semiconductor devices.

[0054] The insulating layer 110 is formed by a single or laminated oxide insulating layer or a nitride insulating layer. This is possible. As the insulating layer 110, for example, silicon oxide, silicon oxide nitride, silicon nitride Silicon oxide, silicon nitride, aluminum oxide, hafnium oxide, gallium oxide or G α-Zn oxide or similar materials can be used, and the structure can be provided as a single layer or in multiple layers.

[0055] The insulating layer 110 formed above the oxide semiconductor layer 108 has an excess oxygen content. This makes it possible to selectively supply excess oxygen only to channel region 108i. Alternatively, the channel region 108i, source region 108s, and drain region 108d may be affected. After supplying excess oxygen, the carrier density of the source region 108s and the drain region 108d is reduced. You just need to selectively increase the degree.

[0056] Furthermore, it is preferable that the thickness of the insulating layer 110 be smaller than the thickness of the insulating layer 104. As described above, the oxide semiconductor layer 112, which functions as the second gate electrode, is connected to wiring V0 The voltage becomes more constant. Due to the small thickness of the insulating layer 110, the second gate electrode and the second gate The insulating layer and oxide semiconductor layer 108 provide a large parasitic capacitance to the transistor 100. This allows for the suppression of dielectric breakdown of transistors due to electrostatic discharge, etc. It is possible.

[0057] The oxide semiconductor layer 112 supplies oxygen to the insulating layer 110, and then nitrogen from the insulating layer 116. Alternatively, the supply of either hydrogen or both increases the carrier density. In other words, the oxide semiconductor layer 112 is an oxide conductor (OC). It also functions as an oxide semiconductor layer 1. The carrier density will be higher than in 08.

[0058] The oxide semiconductor layer 108 has a source region 108s and a drain region 108d, and The oxide semiconductor layer 112 may each contain elements that form oxygen vacancies. Typical elements that form oxygen vacancies include hydrogen, boron, carbon, nitrogen, fluorine, and lithium. Examples include sulfur, chlorine, and noble gas elements. A typical example of a noble gas element is helium. Examples include um, neon, argon, krypton, and xenon.

[0059] When impurity elements are added to an oxide semiconductor layer, the bonding between metal elements and oxygen in the oxide semiconductor layer occurs. The bond is broken, and an oxygen vacancy is formed. Alternatively, an impurity element is added to the oxide semiconductor layer. Then, the oxygen that was bonded to the metal element in the oxide semiconductor layer combines with the impurity element, and the metal element Oxygen is removed from the oxide semiconductor layer, forming an oxygen vacancy. As a result, in the oxide semiconductor layer, Carrier density increases, and conductivity improves.

[0060] In transistor 100, the side edge of the insulating layer 110 and the side edge of the oxide semiconductor layer 112 It is preferable that the parts have a region where they are aligned. In other words, in transistor 100, insulation The upper end of layer 110 and the lower end of oxide semiconductor layer 112 are roughly aligned. For example, acid The above structure is achieved by processing the insulating layer 110 using the semiconductor layer 112 as a mask. It is possible.

[0061] Oxide semiconductor layer 108 and oxide semiconductor layer 112 are made of In-M-Zn oxide (where M is Al It is formed from metal oxides such as Ga, Y, or Sn. Also, the oxide semiconductor layer 108 and In-Ga oxide and In-Zn oxide may be used as the oxide semiconductor layer 112. In particular, the oxide semiconductor layer 108 and the oxide semiconductor layer 112 are made of gold, which is composed of the same constituent elements. Forming with a specific oxide is preferable because it can reduce manufacturing costs.

[0062] When oxide semiconductor layer 108 and oxide semiconductor layer 112 are In-M-Zn oxide, Atoms of the metal element in the sputtering target used to deposit nM-Zn oxide films The numerical ratio preferably satisfies In≧M and Zn≧M. Such a sputtering target As for the atomic ratio of the metal elements in the net, In:M:Zn=1:1:1, In:M:Zn=1: 1:1.2, In:M:Zn=2:1:1.5, In:M:Zn=2:1:2.3, In :M:Zn=2:1:3, In:M:Zn=3:1:2, In:M:Zn=4:2:4. 1. In:M:Zn = 5:1:7 is preferred. Note that the oxide semiconductor layer 108 to be formed The atomic ratio of the oxide semiconductor layer 112 is determined to be the same as the above sputtering target. The atomic ratio of the contained metal elements can vary by approximately plus or minus 40%. For example, For the sputtering target, an atomic ratio of In:Ga:Zn = 4:2:4.1 was used. In this case, the atomic ratio of the oxide semiconductor layer to be formed is approximately In:Ga:Zn=4:2:3. This can happen.

[0063] The channel region 108i is an oxide semiconductor layer with a low impurity concentration and low defect level density. By using this method, transistors with even better electrical characteristics can be fabricated. Here, high purity is defined as having a low impurity concentration and a low defect level density (few oxygen vacancies). It is called genuine or substantially high-purity genuine. Alternatively, it is called genuine or substantially genuine. High purity Oxide semiconductors that are highly intrinsic or substantially high-purity intrinsic have few carrier sources, In some cases, the carrier density can be lowered. Therefore, in the oxide semiconductor layer, A transistor in which a threshold voltage region is formed exhibits electrical characteristics where the threshold voltage is positive (normally). Also known as off-peak characteristics. It is prone to becoming high-purity intrinsic or substantially high-purity intrinsic. Oxide semiconductor layers have a low defect level density, which can result in a low trap level density. Furthermore, oxide semiconductor layers that are high-purity intrinsic or substantially high-purity intrinsic exhibit significant off-current. Small characteristics can be obtained. Therefore, a channel region is formed in the oxide semiconductor layer. Transistors with small variations in electrical characteristics can be highly reliable. ru.

[0064] On the other hand, the source region 108s, the drain region 108d, and the oxide semiconductor layer 112 are It is in contact with the insulating layer 116. Source region 108s, drain region 108d, and oxide semiconductor When layer 112 comes into contact with insulating layer 116, the source region 108s and the drain are separated from the insulating layer 116. In region 108d and oxide semiconductor layer 112, either or both of hydrogen and nitrogen are present. Because it is added, the carrier density increases.

[0065] The carrier density of the oxide semiconductor layer is explained below.

[0066] Factors that affect the carrier density of an oxide semiconductor layer include oxygen in the oxide semiconductor layer. Examples include defects (Vo) or impurities in the oxide semiconductor layer.

[0067] When the number of oxygen vacancies in the oxide semiconductor layer increases, hydrogen atoms bond to these oxygen vacancies (this state is called Vo When this occurs (also called H), the defect level density increases. Alternatively, impurities in the oxide semiconductor layer When there are more of them, the density of defect levels increases due to these impurities. Therefore, in the oxide semiconductor layer by controlling the density of defect levels in the oxide semiconductor layer, the carrier density of the oxide semiconductor layer can be controlled .

[0068] Here, consider a transistor that uses an oxide semiconductor layer as a channel region.

[0069] When aiming to suppress a negative shift in the threshold voltage of the transistor or to reduce the off-current of the transistor , it is preferable to lower the carrier density of the oxide semiconductor layer. When lowering the carrier density of the oxide semiconductor layer, the impurity concentration in the oxide semiconductor layer should be lowered and the density of defect levels should be reduced. In this specification and the like, a low impurity concentration and a low density of defect levels are referred to as high purity intrinsic or substantially high purity intrinsic. As the carrier density of a high purity intrinsic oxide semiconductor layer, it is less than 8×10 , preferably less than 1 ×10 , more preferably less than 1×10 , and it is sufficient to be 1×10 15 cm -3 or more. ×10 11 cm -3 or less, more preferably less than 1×10 10 cm -3 or less, and 1×10 -9 cm -3 [[ID=四十ー]] or more.

[0070] On the other hand, when aiming to improve the on-current of the transistor or to improve the field-effect mobility of the transistor , it is preferable to increase the carrier density of the oxide semiconductor layer. When increasing the carrier density of the oxide semiconductor layer, the impurity concentration of the oxide semiconductor layer may be slightly increased, or the density of defect levels of the oxide semiconductor layer may be slightly increased. Or, the bandgap of the oxide semiconductor layer may be made smaller. For example, for a transistor When increasing the carrier density of the oxide semiconductor layer, the impurity concentration of the oxide semiconductor layer may be slightly increased, or the density of defect levels of the oxide semiconductor layer may be slightly increased. Or, the bandgap of the oxide semiconductor layer may be made smaller. For example, for a transistor or, the bandgap of the oxide semiconductor layer may be made smaller. For example, for a transistor Within the range where the on / off ratio of the Id-Vg characteristic can be obtained, the impurity concentration is slightly high, Alternatively, an oxide semiconductor layer with a slightly higher defect level density can be considered substantially intrinsic. The affinity for the offspring is high, and consequently the band gap becomes small, resulting in thermal excitation. An oxide semiconductor layer with an increased density of electrons (carriers) can be considered virtually intrinsic. Oh, if an oxide semiconductor layer with a higher electron affinity is used, the threshold value of the transistor The voltage will become lower.

[0071] The oxide semiconductor layer with the increased carrier density described above is slightly n-type. Therefore, an oxide semiconductor layer with increased carrier density is called "Slightly-n". That's fine.

[0072] The carrier density of a virtually intrinsic oxide semiconductor layer is 1 × 10⁻⁶ 5 cm -3 The above 1 x 10 1 8 cm -3 Less than 1 × 10 is preferable. 7 cm -3 The above 1 x 10 17 cm -3 The following is better Mashiku, 1 x 10 9 cm -3 The above 5 x 10 16 cm -3 The following is even more preferable: 1 × 10 10 cm -3 The above 1 x 10 16 cm -3 The following is even more preferable: 1 × 10 11 cm -3 Below Top 1×10 15 cm -3 The following are even more preferable.

[0073] Furthermore, by using the substantially intrinsic oxide semiconductor layer mentioned above, the reliability of the transistor is improved. Improvement may occur. Here, using Figure 23, an oxide semiconductor layer is used in the channel region. This explains why the reliability of transistors improves. Figure 23 shows the oxide semiconductor layer. This diagram illustrates the energy bands in transistors used in the channel region.

[0074] In Figure 23, GE represents the gate electrode, GI represents the gate insulating film, and OS represents the oxide semiconductor layer. In this case, SD represents the source electrode or drain electrode, respectively. That is, Figure 23 shows the G A gate electrode, a gate insulating film, an oxide semiconductor layer, and a source electrode in contact with the oxide semiconductor layer. This is an example of the energy band of the drain electrode.

[0075] Furthermore, in Figure 23, a silicon oxide film is used as the gate insulating film, and an oxide semiconductor is used. The structure uses In-Ga-Zn oxide in the layer. Furthermore, it can be formed in a silicon oxide film. The defect transition level (εf) is located approximately 3.1 eV away from the lower end of the conduction band of the gate insulating film. The oxide semiconductor layer and silicon oxide layer are formed when the gate voltage (Vg) is 30V. The Fermi level (Ef) of the silicon oxide film at the interface with the gate film is below the conduction band of the gate insulating film. It is assumed that the film is formed at a position approximately 3.6 eV away from the edge. The M level fluctuates depending on the gate voltage. For example, increasing the gate voltage can cause oxidation Fermi level (Ef) of the silicon oxide film at the interface between the semiconductor layer and the silicon oxide film. The value will decrease. Also, the white circles in Figure 23 represent electrons (carriers), and X in Figure 23 represents silica oxide. This represents the defect level within the film.

[0076] As shown in Figure 23, when a gate voltage is applied, for example, when carriers are thermally excited... Then, the carrier is trapped in the defect level (X in the diagram), and moves from positive ("+") to neutral. The charge state of the defect level changes to (0). That is, the Fermi level of the silicon oxide film. The value obtained by adding the energy of the thermal excitation described above to (Ef) is greater than the defect transition level (εf). In this case, the charge state of the defect levels in the silicon oxide film changes from positive to neutral, and the transient The threshold voltage of the station will fluctuate in the positive direction.

[0077] Furthermore, when oxide semiconductor layers with different electron affinities are used, the gate insulating film and the oxide semiconductor layer The depth at which the Fermi level is formed at the interface may differ. When a material semiconductor layer is used, near the interface between the gate insulating film and the oxide semiconductor layer, the gate insulating film The lower end of the conduction band of the edge film becomes relatively higher. In this case, a defect level may form in the gate insulating film. Because the position (X in Figure 23) also becomes relatively high, the Fermi level of the gate insulating film and the oxide semiconductor The energy difference with the Fermi level of the layer increases. Therefore, the amount of charge trapped in the gate insulating film is reduced, for example, the silicon oxide film mentioned above. The change in the charge state of defect levels that can form inside is reduced, and the gate bias heat (Gate Bias Temperature (also known as GBT) Transition in stress This can reduce fluctuations in the threshold voltage.

[0078] The above explains the carrier density of oxide semiconductor layers.

[0079] Furthermore, as shown in Figure 2(C), the oxide semiconductor layer 108i is the first gate electrode. The conductive layer 106 functions, and the oxide semiconductor layer 112 functions as a second gate electrode. A conductive layer or oxide semiconductor positioned opposite it, functioning as two gate electrodes. It's trapped between layers of body tissue.

[0080] With this configuration, the oxide semiconductor layer 108 included in the transistor 100 The electric field caused by the scanning signal of the conductive layer 106 which functions as the first gate electrode, and the second gate The constant voltage electric field of the oxide semiconductor layer 112, which functions as an electrode, electrically absorbs It can be surrounded.

[0081] As explained in Figure 1(A), transistor 100 is connected from the first gate electrode to the transistor A scanning signal is applied to control the conduction state of the terminal 100, and a constant voltage is applied from the second gate electrode. This configuration provides a constant voltage to the wiring V0, so the wiring V0 and the transient The gate capacitance between stas M1 and M2 is not a problem, and the connection between their gate electrodes is important. Compared to a conventional design, the gate capacitance between the scan line GL and the transistor can be reduced.

[0082] Furthermore, transistor 100 is guided by a scanning line provided in the same layer as the first gate electrode. The configuration controls the pass-through state. The first gate electrode is made of a metallic material. The metallic material is the second Its resistance is lower compared to metal oxide materials such as the oxide semiconductor layer 112 that forms the gate electrode. Therefore, the resistance of the scanning line formed from the same material as the conductive layer 106 can be reduced.

[0083] Furthermore, transistor 100 has a gate electrode that releases oxygen when heated, like an oxide layer. It has an oxide semiconductor layer 112 that functions as a second gate electrode. The transistor 100 can be a highly reliable transistor. Thus, the conductive layer 106, which is the first gate electrode, and the scanning lines on the same layer reduce resistance. This can compensate for the drawback that the resistance of the second gate electrode becomes too high. It can be done. Also, in order to lower the resistance of the oxide semiconductor layer, which is the second gate electrode, oxide semiconductor Compared to a configuration that reduces resistance by stacking body layers and metal wiring, this reduces the number of steps involved in manufacturing costs. It can reduce the amount of waste.

[0084] Furthermore, transistor 100 is for connecting the first gate electrode and the second gate electrode. There is no aperture. Therefore, configurations that place apertures in narrow areas such as pixel regions are avoided. This is possible. Therefore, it is suitable for high-resolution display devices.

[0085] [Example of configuration in the top view] Next, Figure 3 is a top view applicable to the circuit configuration of Figure 1(A), excluding the components such as the light-emitting elements. An example is shown. Figure 4 also shows the conductive layer and semiconductor layer in the top view of Figure 3. This diagram illustrates how the layers are separated and connected through openings. Also, Figure 5(A) shows this. Figure 3 is a cross-sectional view between the dotted lines P1 and P2, and Figure 5(B) is a cross-sectional view between the dotted lines Q1 and Q2 in Figure 3. This is a cross-sectional view. Figures 6(A) and 6(B) are parallel to the top view of Figure 3, including the configuration of the light-emitting element, etc. All are top views shown.

[0086] In the top view of Figure 3, the scan line GL, signal line SL, wiring V0, and current supply line ANODE are shown. And transistor M1, transistor M2, transistor M3, and capacitance element C1, The diagram illustrates the layer structure of the conductive layer and the oxide semiconductor layer, and the insulating layer, etc. The "show" part has been omitted.

[0087] The layer structure of the conductive layer and oxide semiconductor layer constituting each wiring etc. in Figure 3 is shown in Figure 4 and This can be understood from Figure 5. A conductive layer 151, which functions as the first gate electrode, is placed on the substrate SUB. A conductive layer 152 is provided. Next, an insulating layer which functions as the first gate insulating layer Through 153, oxide semiconductor layer 161, oxide semiconductor layer 162 and oxide semiconductor layer 16 3 is provided. Next, through the insulating layer 164 which functions as a second gate insulating layer , oxide semiconductor layer 171, oxide semiconductor layer 172 and An oxide semiconductor layer 173 is provided. Next, an oxide semiconductor layer 161, an oxide semiconductor Layer 162 and oxide semiconductor layer 163, and oxide semiconductor layer 171, oxide semiconductor layer 1 Insulation that selectively increases the carrier density in 72 and oxide semiconductor layer 173 to improve conductivity. Through layer 174, the source electrode, drain electrode, or various wiring of the transistor Functional conductive layer 181, conductive layer 182, conductive layer 183, conductive layer 184, and conductive layer 18 5 is provided. Next, insulating layer 186 and insulating layer 18, which function as interlayer insulating layers. Conductive layers 191 and 192 are provided via 7. An insulating layer 193, which functions as an interlayer insulating layer, is provided on the electrical layer 192. Layer 186, insulating layer 187, and insulating layer 193 are provided with openings 190 that reach the conductive layer 183. This opening 190 is then used to form a pixel electrode, and light-emitting elements are provided thereon. This is an opening for connecting to the element.

[0088] Furthermore, in Figures 3 and 4, the configuration marked with an "X" inside a square represents an opening formed in the insulating layer. The opening allows the conductive layer and oxide semiconductor layer of each layer to be separated, as shown by the arrows in Figure 4. They are connected. Also, Figure 4 shows conductive layer 151 which will be the scan line GL and conductive layer 1 which will be the signal line SL. 91. The conductive layer 181 that will become the wiring V0 and the conductive layer 192 that will become the current supply line ANODE are shown in the diagram. It is.

[0089] As can be seen from Figures 3, 4, and 5, in transistors M1 and M2, The first gate electrode and the second gate electrode are not connected. Compared to the case where the gate electrodes of each other are connected, scan line GL and transistors M1 and M2 The gate capacitance between it and the first gate electrode can be formed only between them. Therefore, the above configuration, compared to the case where the gate electrodes of each other are connected, allows the scan line GL and the transient The gate capacity between the starter and the starter can be reduced.

[0090] Also, as can be seen from Figures 3, 4, and 5, transistors M1 and M2 The configuration involves placing the scan line GL, which is made of a metallic material, in the same layer as the first gate electrode. This is possible. Therefore, the first gate electrode is formed with a conductive layer made of a metallic material, and the second The gate electrode is formed of a conductive layer composed of a metal oxide material such as an oxide semiconductor. Even if this method is adopted, problems such as increased resistance in the scan line GL can be avoided. To reduce the resistance of the scan line GL, the manufacturing cost of adding extra metal wiring is... It can be reduced.

[0091] Furthermore, as can be seen from Figures 3, 4, and 5, the two electrodes that form the capacitive element C1 It can be composed of a conductive layer 152 and an oxide semiconductor layer 163. By making the insulating layer 153 thinner, a capacitive element with a large capacitance can be created.

[0092] Furthermore, in Figure 6(A), the pixels described in Figures 3 to 5 are represented by three colors (for example, red (R), green). (G), blue (B)) is shown as a top view with 2x3 pixels as subpixels. Figure 6( In A), there are 2 rows (m row, (m+1 row)) and 3 columns (n ​​column, (n+1) column, (n+2 column)). The arranged subpixels (R1, R2, G1, G2, B1, B2) are shown in the diagram. Also, Figure 6 ( In A), in addition to the opening 190 described in Figures 3 to 5, there is also the light-emitting layer 1 that constitutes the light-emitting element EL. Figure 6(A) shows scan line GL_ m, the scan line GL_m+1 in the (m+1)th row, the signal line SL_n in the nth column, and (n+1) The signal line SL_n+1 in the (n+2)th column, the signal line SL_n+2 in the (n+2)th column, wiring V0, and electricity The flow supply line ANODE is shown in the diagram.

[0093] Figure 6(B) is a schematic representation of the top view shown in Figure 6(A). In this region, region 22 is a region where the light-emitting layer 198 and the partition layer 199 are provided, Region 24 is a region where circuits including transistors M1 to M3, etc., are provided. In Figure 6(A) As shown in the figure, the opening 190 is located near the center of region 24. Region 24 is located in region 22 By arranging them offset rather than overlapping, the opening 190 can be positioned at the edge of region 22. This configuration allows the light-emitting region to be positioned regardless of the location of the opening 190. It is possible.

[0094] [Differentiation] A circuit configuration applicable to one aspect of the present invention is shown in Figure 1(A) with transistors M1 to M The pixel configuration is not limited to those having 3. For example, as shown in Figure 7(A), two or fewer transistors This is also applicable to pixel configurations that have a 'ta' element.

[0095] The pixel configuration shown in Figure 7(A) consists of transistor M4, transistor M5, and capacitive element C. It has 2 and a light-emitting element EL. In other words, the transistor M2 in Figure 1(A) is omitted. This corresponds to the circuit configuration.

[0096] In the configuration shown in Figure 7(A), in transistor M4, the first gate electrode and the The configuration is such that the gate electrodes of 2 are not connected. Compared to the case where the gate capacitance between the scan line GL and the transistor is greater than that of the first gate electrode. It can be formed only between them. Since a constant voltage is applied to the wiring V0, the wiring V The gate capacitance between 0 and transistor M4 is not a problem. Therefore, the above configuration is mutual Compared to the case where the gate electrode is connected, the gate capacitance between the scan line GL and the transistor This can be made smaller. Also, by controlling the constant voltage applied to the wiring V0, the threshold of transistor M4 can be reduced. It also has the effect of allowing you to adjust the voltage value.

[0097] Furthermore, in the above configuration, in transistor M4, a metallic material is placed in the same layer as the first gate electrode. The configuration can be such that the scan line GL is arranged. The first gate electrode is formed with a conductive layer made of a metallic material, and the second gate electrode is made of a gold oxide semiconductor. Even when adopting a configuration formed with a conductive layer composed of a specific oxide material, the resistance of the scanning line GL is high. This avoids problems such as the scan line GL becoming uncontrollable. Also, in order to reduce the resistance of the scan line GL, extra This reduces manufacturing costs by eliminating the need for wiring made of metal materials.

[0098] Furthermore, in the above configuration, the first gate electrode is formed of a conductive layer made of a metal material, and the second The gate electrode can be formed from a conductive layer composed of a metal oxide material such as an oxide semiconductor. Therefore, a gate electrode that releases oxygen upon heating is used as the second gate electrode, and the transient The reliability of the transistor can be improved. In addition, in transistor M4, the first gate Because the electrode and the second gate electrode are not connected, they do not interact with each other in narrow areas such as the pixel region. Since a configuration without connecting the gate electrode can be adopted, a high-definition display device can be realized. ru.

[0099] A circuit configuration applicable to one aspect of the present invention is the pixel configuration shown in Figures 1(A) and 7(A). Not limited to this. For example, as shown in Figure 7(B), a pixel configuration having three or more transistors... It is also applicable to this.

[0100] The pixel configuration shown in Figure 7(B) consists of transistor M6, transistor M7, and transistor Transistor M8, transistor M9, transistor M10, transistor M11, and capacitance element It has a sub-element C3, a capacitive element C4, a capacitive element C5, and a light-emitting element EL. The configuration includes signal line SL, current supply line ANODE, wiring V0, common wiring CATHODE, and, It operates using scan lines GL1 to GL4 and wiring V1 and V2. Wiring V1 and V2 are constant voltages. This is the given wiring.

[0101] In the configuration shown in Figure 7(B), the first gate in transistors M6 to M10 The gate electrode and the second gate electrode are not connected. With this configuration, the gates are not connected to each other. The gate capacitance between the scanning lines GL1 to GL4 and the transistor can be made to be formed only between the first gate electrode as compared with the case of connecting the electrodes. Since a fixed voltage is applied to the wiring V0, the gate capacitance between the wiring V0 and the transistors M6 to M10 does not pose a problem. Therefore, the above configuration can reduce the gate capacitance between the scanning lines GL1 to GL4 and the transistor as compared with the case of connecting the gate electrodes to each other. Also, by controlling the fixed voltage applied to the wiring V0, there is an effect that the threshold voltages of the transistors M6 to M10 can be adjusted. In the above configuration, in the transistors M6 to M10, the scanning lines GL1 to GL4 made of a metal material can be arranged in the same layer as the first gate electrode. Therefore, even if a configuration is adopted in which the first gate electrode is formed of a conductive layer made of a metal material and the second gate electrode is formed of a conductive layer made of a metal oxide material such as an oxide semiconductor, the problem that the resistance of the scanning lines GL1 to GL4 becomes high can be avoided. Also, in order to reduce the resistance of the scanning lines GL1 to GL4, the manufacturing cost for providing extra wiring made of a metal material can be reduced. In the above configuration, the first gate electrode can be formed of a conductive layer made of a metal material, and the second gate electrode can be formed of a conductive layer made of a metal oxide material such as an oxide semiconductor. Therefore, a gate electrode that releases oxygen by heating can be adopted as the second gate electrode, and the reliability of the transistor can be improved. In addition, in the transistors M6 to M10, since the first gate electrode and the second gate electrode are not connected, in a narrow region such as a pixel region the above effect can be obtained. the above effect can be obtained. the above effect can be obtained. the above effect can be obtained.

[0102] In the above configuration, in the transistors M6 to M10, the scanning lines GL1 to GL4 made of a metal material can be arranged in the same layer as the first gate electrode. Therefore, even if a configuration is adopted in which the first gate electrode is formed of a conductive layer made of a metal material and the second gate electrode is formed of a conductive layer made of a metal oxide material such as an oxide semiconductor, the problem that the resistance of the scanning lines GL1 to GL4 becomes high can be avoided. Also, in order to reduce the resistance of the scanning lines GL1 to GL4, the manufacturing cost for providing extra wiring made of a metal material can be reduced. Therefore, even if a configuration is adopted in which the first gate electrode is formed of a conductive layer made of a metal material and the second gate electrode is formed of a conductive layer made of a metal oxide material such as an oxide semiconductor, the problem that the resistance of the scanning lines GL1 to GL4 becomes high can be avoided. Also, in order to reduce the resistance of the scanning lines GL1 to GL4, the manufacturing cost for providing extra wiring made of a metal material can be reduced. Therefore, even if a configuration is adopted in which the first gate electrode is formed of a conductive layer made of a metal material and the second gate electrode is formed of a conductive layer made of a metal oxide material such as an oxide semiconductor, the problem that the resistance of the scanning lines GL1 to GL4 becomes high can be avoided. Also, in order to reduce the resistance of the scanning lines GL1 to GL4, the manufacturing cost for providing extra wiring made of a metal material can be reduced. the problem that the resistance of the scanning lines GL1 to GL4 becomes high can be avoided. Also, in order to reduce the resistance of the scanning lines GL1 to GL4, the manufacturing cost for providing extra wiring made of a metal material can be reduced. the problem that the resistance of the scanning lines GL1 to GL4 becomes high can be avoided. Also, in order to reduce the resistance of the scanning lines GL1 to GL4, the manufacturing cost for providing extra wiring made of a metal material can be reduced. the manufacturing cost for providing extra wiring made of a metal material can be reduced.

[0103] In the above configuration, the first gate electrode can be formed of a conductive layer made of a metal material, and the second gate electrode can be formed of a conductive layer made of a metal oxide material such as an oxide semiconductor. In the above configuration, the first gate electrode can be formed of a conductive layer made of a metal material, and the second gate electrode can be formed of a conductive layer made of a metal oxide material such as an oxide semiconductor. Therefore, a gate electrode that releases oxygen by heating can be adopted as the second gate electrode, and the reliability of the transistor can be improved. In addition, in the transistors M6 to M10, since the first gate electrode and the second gate electrode are not connected, in a narrow region such as a pixel region the above effect can be obtained. Since a configuration in which the gate electrodes are not connected to each other in the domain can be adopted, a high-definition display device can be realized. This can be done. <00岁905> Also, in Fig. 1(A), the transistor M3 is shown with a configuration connecting the first gate electrode and the second gate electrode. However, one aspect of the present invention is not limited to this configuration. For example, as shown in Fig. 8(A), the second gate electrode of the transistor M3 may be configured to be connected to the wiring V0. This may be the case.

[0105] Alternatively, for example, as shown in Fig. 8(B), the first gate electrode of the transistor M3 may be configured to be omitted. Alternatively, for example, as shown in Fig. 8(C), the first gate electrode of the transistor M 3 may be configured to be connected to one of the source or drain of the transistor M3. This may be the case. This may be the case.

[0106] Also, in the configurations shown in Figs. 8(A) to (C), in the transistors M1 and M2, a configuration in which the first gate electrode and the second gate electrode are not connected is adopted. With this configuration, compared to the case where the gate electrodes are connected to each other, the gate capacitance between the scanning line GL and the transistor can be made to be only formed between the first gate electrode. Since a constant voltage is applied to the wiring V0, the gate capacitance between the wiring V0 and the transistors Ml and M2 does not pose a problem. Therefore, the above configuration can reduce the gate capacitance between the scanning line GL and the transistor compared to the case where the gate electrodes are connected to each other. Also, by controlling the constant voltage applied to the wiring V0, there is also an effect that the threshold voltages of the transistors M1 and M2 can be adjusted. This can be done. This can be done.

[0107] Also, in the above configuration, in the transistors M1 and M2, the first gate electrode is in the same layer as A configuration can be made in which a scanning line GL made of a metallic material is arranged. Therefore, the first The gate electrode is formed from a conductive layer made of a metallic material, and the second gate electrode is made from an oxide semiconductor. Even if a configuration is adopted in which a conductive layer is formed by a metal oxide material such as the scan line GL This avoids problems such as high resistance. Also, to lower the resistance of the scan line GL Furthermore, it reduces manufacturing costs by eliminating the need for extra wiring made of metal materials.

[0108] Furthermore, in the above configuration, the first gate electrode is formed of a conductive layer made of a metal material, and the second The gate electrode can be formed from a conductive layer composed of a metal oxide material such as an oxide semiconductor. Therefore, a gate electrode that releases oxygen upon heating is used as the second gate electrode, and the transient The reliability of the transistor can be improved. In addition, in transistors M1 and M2, Because the first gate electrode and the second gate electrode are not connected, a narrow area such as a pixel region is possible. This configuration allows for the use of gate electrodes that are not connected to each other in the same region, enabling the realization of high-definition display devices. It is possible.

[0109] Furthermore, in Figure 1(A), the second gate in transistors M1 and M2 Although a configuration in which both electrodes are connected to wiring V0 was shown, one aspect of the present invention is in this configuration Not limited to this. For example, as shown in Figure 24(A), the second gate electrode of transistor M1 is The wiring V0 is connected, and the second gate electrode of transistor M2 is connected to the scan line GL. This configuration may also be used. This configuration can increase the current supply capability of transistor M2. ru.

[0110] Alternatively, for example, as shown in FIG. 24(B), the second gate electrode of the transistor M2 is connected to the wiring V0, and the second gate electrode of the transistor M1 is connected to the scanning line GL may be configured. With this configuration, the current supply capacity of the transistor M1 can be increased.

[0111] Also, in FIG. 1(A), the scanning line GL may be a plurality of scanning lines GL1 and GL2. For example, as shown in FIG. 25(A), the first gate electrode of the transistor M1 is connected to the scanning line GL 1, and the first gate electrode of the transistor M2 is connected to the scanning line GL2.

[0112] Also, in FIG. 1(A), the wiring V0 may be a plurality of wirings V0_1 and V0_2. For example, as shown in FIG. 25(B), the second gate electrode of the transistor M1 is connected to the wiring V0_ 1, and the second gate electrode of the transistor M2 is connected to the wiring V0_1.

[0113] This embodiment can be implemented in appropriate combination with at least a part of other embodiments described in this specification.

[0114] <用户输入的内容中没有 标签对应的文本,因此我按照原文格式保留该标签。 (Embodiment 2) In this embodiment, a cross-sectional configuration example of a display device according to an aspect of the present invention will be described.

[0115] 〔Configuration example of display device〕 FIG. 9 shows a schematic top view of a display device 10 described below. The display device 10 includes a pixel portion 1 1, a scanning line driving circuit 12, a signal line driving circuit 13, a terminal portion 15, a plurality of wirings 16a, and a plurality of wirings 16b, etc.

[0116] 〔Cross-sectional configuration example 1〕​​​​ Figure 10 is a schematic cross-sectional view of the display device 10. Figure 10 is, for example, a cross-section of the cutting line A1- in Figure 9. This corresponds to a cross-section along A2.

[0117] The display device 10 consists of a first substrate 201 and a second substrate 202 bonded together by an adhesive layer 220. It has a combined configuration.

[0118] On the first substrate 201 are terminals 15, wiring 16b, and a signal line drive circuit 13. Transistor 255, transistors 251 and 252 that constitute the pixel section 11, A light-emitting element 253, a light-emitting element 254, etc. are provided. In addition, an insulating layer is provided on the first substrate 201. Layer 211, insulating layer 212, insulating layer 213, insulating layer 214, spacer 215, etc. are provided. Yes, they are.

[0119] On the side of the first substrate 201 of the second substrate 202, there is an insulating layer 221, a light-shielding layer 231, and a coloring layer 2 32. Structures 230a, 230b, etc. are provided.

[0120] A light-emitting element 254 is provided on the insulating layer 213. The light-emitting element 254 is the first electrode It has a pixel electrode 225, an EL layer 222, and a second electrode 223 that function as a pixel electrode. An optical adjustment layer 224 is provided between the pole 225 and the EL layer 222. Insulating layer 214 It is provided to cover the ends of the pixel electrode 225 and the optical adjustment layer 224.

[0121] Transistor 251 is connected to transistor M1 as described in Figure 1(A) of the above embodiment 1. This is a transistor that functions as M2. Transistor 252 is the same as in the above embodiment 1. This is the transistor that functions as transistor M3, as explained in Figure 1(A).

[0122] Transistors 251, 252, and 255 have a conductive layer 2 that functions as the first gate electrode. 75 and a conductive layer 272 which functions as a second gate electrode are provided. The configuration consists of a semiconductor in which a channel is formed, sandwiched between two gate electrodes. Conductive layer 275 This is in relation to the conductive layer 106 which functions as the first gate electrode as described in Figure 2 of Embodiment 1 above. The conductive layer 272 functions as the second gate electrode as described in Figure 2 of Embodiment 1 above. This corresponds to the oxide semiconductor layer 112.

[0123] The conductive layer 275 is an electrode that can repair oxygen vacancies in the semiconductor layer 271 by releasing oxygen. This makes it possible to stabilize the electrical characteristics of the transistor.

[0124] Furthermore, in transistors connected to light-emitting elements, such as transistor 252, there are two gates It is preferable to configure the system so that the same signal is applied to them by electrically connecting the electrodes. i. Such transistors have a higher field-effect mobility compared to other transistors. This makes it possible to increase the on-current. As a result, circuits capable of high-speed operation can be created. It can be manufactured.

[0125] In Figure 10, a portion of the conductive layer 274, a portion of the insulating layer 217, and a portion of the conductive layer 273 are shown. It is composed of a part of the conductive layer 275 and a part of the insulating layer 211, It may also be composed of a portion of the semiconductor layer 271.

[0126] Figure 10 shows an example where the light-emitting element 254 is a light-emitting element with a top emission structure. The light emitted from the light-emitting element 254 is emitted towards the second substrate 202. By doing so, a transistor and a capacitive element are placed on the lower side of the light-emitting element 254 (on the side of the first substrate 201). Since circuits, wiring, etc. can be arranged, the aperture ratio of the pixel section 11 can be increased.

[0127] On the side of the second substrate 202 facing the first substrate 201, there is a colored layer 23 that overlaps with the light-emitting element 254. 2 is provided. In addition, in the parts where the colored layer 232 is not provided, a light-shielding layer 231 is provided. It may be provided. The light-shielding layer 231 overlaps with the signal line drive circuit 13, as shown in Figure 10. It may be provided in a position where it is transparent. Also, the colored layer 232 and the light-shielding layer 231 are covered, An overcoat layer may be provided.

[0128] Furthermore, on the second substrate 202, on the side of the first substrate 201, in the region inside the adhesive layer 220, Structure 230a is provided, and structure 230b is provided in the area outside the adhesive layer 220. Structures 230a and 230b have an insulating layer at the end of the second substrate 202. When cracks occur in 221 or the second substrate 202, a mechanism is used to suppress their progression. It has the ability. In Figure 10, structures 230a and 230b are the same as the light-shielding layer 231. An example of a laminated structure consisting of a layer made of one film and a layer made of the same film as the colored layer 232 is shown. This is achieved by creating a layered structure of two or more layers, which further suppresses crack propagation. The effect can be enhanced. In this case, structures 230a are placed on both sides of the adhesive layer 220. The configuration showing the placement of both and structure 230b is shown, but either one is acceptable. If there is no risk of a crack occurring (for example, if the rigidity of the second substrate 202 is high), then the structure The configuration may also be one in which object 230a and structure 230b are not provided.

[0129] The spacer 215 is provided on the insulating layer 214. The spacer 215 is on the first substrate A gap space control prevents the distance between 201 and the second substrate 202 from becoming too small. It functions as a spacer. In addition, the spacer 215 has a part of its side surface and the surface to be formed. The angle is preferably 45 degrees or more and 120 degrees or less, more preferably 60 degrees or more and 100 degrees or less. Furthermore, it is preferable to have a portion that is between 75 degrees and 90 degrees. As a result, regions with a thinner EL layer 222 are more likely to be formed on the side surface of the spacer 215. Therefore, current flows between adjacent light-emitting elements via the EL layer 222. This can suppress the phenomenon of light emission, especially when the pixel section 11 is high resolution. Because the distance between adjacent light-emitting elements becomes smaller, a spacer 215 of this shape is generated. It is effective to place it between optical elements. Furthermore, the EL layer 222 is a layer containing a highly conductive material. It is particularly effective in cases where [certain conditions are present].

[0130] Furthermore, the spacer 215 acts as a shielding mass when forming the EL layer 222, the second electrode 223, etc. When using the shielding mask, it has the function of preventing damage to the surface being formed. It's okay to be there.

[0131] The spacer 215 is preferably provided overlapping with the wiring that intersects the scan line.

[0132] Figure 10 shows an example of a display device 10 using a color filter method. For example, color Layer 232 consists of three colors to which one of the following colors is applied: red (R), green (G), or blue (B). A configuration in which one color is represented by a sub-pixel is also possible. In addition, white (W) Applying yellow (Y) subpixels improves color reproduction and reduces power consumption. preferable.

[0133] In the light-emitting element 254, a microcavity formed by the colored layer 232 and the optical adjustment layer 224 The combination of structures allows the display device 10 to extract light with high color purity. The thickness of the optical adjustment layer 224 can be different depending on the color of each subpixel. Depending on the configuration, an optical adjustment layer may be omitted.

[0134] Furthermore, a white-emitting EL layer is applied as the EL layer 222 of the light-emitting element 254. This is preferable. By applying such a light-emitting element 254, the EL layer 222 can be applied to each subpixel. Since there is no need to paint different colors, costs can be reduced and yield can be improved, and the pixel section 11 High resolution becomes easier. Also, by providing an optical adjustment layer of different thicknesses for each sub-pixel, each Alternatively, the EL layer 222 may be painted in a different way for the subpixels, in which case optical adjustment may be necessary. The configuration may also be one without a layer or a colored layer, or without both. In each subpixel, at least the light-emitting layer of the EL layer 222 is painted separately, and the other layers are It is also acceptable to form it without painting different sections.

[0135] Figure 10 shows an example in which an FPC 242 is provided that is electrically connected to the terminal portion 15. Therefore, the display device 10 shown in Figure 10 can also be called a display module. Furthermore, a display device that does not have an FPC (Flexible Printed Circuit) or similar component can also be called a display panel.

[0136] The terminal section 15 is electrically connected to the FPC 242 via the connecting layer 243.

[0137] In Figure 10, the terminal portion 15 consists of wiring 16b and a conductive film made of the same conductive film as the pixel electrode 225. This shows a configuration having a laminated structure of conductive layers. In this way, the terminal portion 15 is made up of multiple conductive layers. By using a layered structure, it is possible not only to reduce electrical resistance but also to increase mechanical strength. It is preferable for this reason.

[0138] The insulating layers 211 and 221 are made of materials that do not easily allow impurities such as water and hydrogen to diffuse. It is preferable that the insulating layer 211 and insulating layer 221 function as a barrier film. This is possible. With this configuration, the first substrate 201 and the second substrate 202 can be used as Even if a material with moisture permeability is used, externally, the light-emitting element 254 and transistors may not be able to move. This effectively prevents impurities from entering from the inside, resulting in a highly reliable display device. It can be implemented.

[0139] Figure 10 shows a hollow seal with a space 250 between the first substrate 201 and the second substrate 202. This shows a case where a structure exists. For example, space 250 is an inert gas such as nitrogen or a noble gas. It may also be filled with liquid crystal material or fluid material such as oil. It may be filled. Alternatively, the space 250 may be under reduced pressure. Note that the sealing method This is not limited to this, and solid encapsulations filled with resin or the like may also be used.

[0140] [Cross-sectional configuration example 2] Figure 11 shows a case where the pixel section 11 and the signal line driving circuit 13 are bent for use. An example of a display device configuration is shown.

[0141] The display device 10 shown in Figure 11 has a first substrate 201 and a second substrate 202 that are sealed with a encapsulating material 260. Therefore, an example is shown where the structure has a bonded solid encapsulation structure.

[0142] Furthermore, the first substrate 201 has an adhesive layer 261, and the adhesive layer 261 has an insulating layer 216. A transistor and a light-emitting element are provided on the edge layer 216. The insulating layer 216 is the insulating layer 2 Similar to 21, materials that do not easily diffuse impurities such as water and hydrogen can be used.

[0143] Furthermore, an adhesive layer 262 is provided between the second substrate 202 and the insulating layer 221.

[0144] Furthermore, as shown in Figure 11, the insulating layer 213 is more insulated than the pixel section 11 and the signal line driving circuit 13. An opening is provided on the outer periphery of the first substrate 201. For example, an insulating layer 213 is provided. When using resin material, an opening is provided to surround the pixel section 11 and the signal line drive circuit 13, etc. This is preferable. With this configuration, the vicinity of the side surface of the insulating layer 213 that is in contact with the outside Therefore, the parts that overlap with the pixel section 11 and the signal line driving circuit 13, etc., are not continuous, so they are not exposed to external light. This can suppress the diffusion of impurities such as water and hydrogen through the marginal layer 213.

[0145] As shown in Figure 11, by using a solid encapsulation structure, the first substrate 201 and the second substrate 202 It becomes easier to maintain a uniform distance between the first substrate 201 and the second substrate 2 As 02, a flexible substrate can be suitably used. Therefore, the pixel portion 11 , the scan line drive circuit 12 and the signal line drive circuit 13 are used by bending part or all of them. This is possible. For example, attaching the display device 10 to a curved surface, or the pixel portion of the display device 10 By folding or otherwise manipulating it, various forms of electronic devices can be realized.

[0146] [Differentiation] The following describes an example of a touch panel that has a touch sensor.

[0147] Figure 12 shows a touch panel with an on-cell type touch sensor applied to the configuration illustrated in Figure 10. This shows an example of the word "ru".

[0148] A conductive layer 291 and a conductive layer 292 are provided on the outer surface of the second substrate 202, and these are An insulating layer 294 is provided covering it. A conductive layer 293 is also provided on the insulating layer 294. The conductive layer 293 is provided with the conductive layer 291 sandwiched between the conductive layer 291 through an opening provided in the insulating layer 294. It is electrically connected to two conductive layers 292. Also, the insulating layer 294 and the substrate 296 are connected. They are bonded together by an adhesive layer 295.

[0149] The capacitance formed between conductive layer 291 and conductive layer 292 changes as the object to be detected approaches. This allows for the detection of the object approaching or coming into contact with something. Position information is obtained by arranging a number of conductive layers 291 and multiple conductive layers 292 in a grid pattern. It is possible.

[0150] Furthermore, a terminal portion 299 is provided in an area close to the outer edge of the second substrate 202. 99 is electrically connected to FPC297 via the connection layer 298.

[0151] Here, the substrate 296 is also used as a substrate that a sensing object such as a finger or stylus directly touches. It is possible to do so. In that case, a protective layer (ceramic coating, etc.) can be provided on the substrate 296. This is preferable. The protective layer may be, for example, silicon oxide, aluminum oxide, yttrium oxide, Inorganic insulating materials such as yttria-stabilized zirconia (YSZ) can be used. Tempered glass may be used for the substrate 296. Tempered glass can be tempered using methods such as ion exchange or air cooling. Materials that have undergone physical or chemical treatment and have had compressive stress applied to their surface are used. This is possible. A touch sensor is placed on one side of the reinforced glass, and the opposite side is used for, for example, electronics. By placing it on the outermost surface of the device and using it as a touch surface, the overall thickness of the device can be reduced. can.

[0152] For example, a capacitive touch sensor can be used as a touch sensor. Examples of methods include surface capacitance and projected capacitance. Examples of the formulas include the self-capacitance method and the mutual-capacitance method. Using the mutual-capacitance method allows for simultaneous multi-point operation. This is preferable because it enables detection. Below, a projected capacitive touch sensor is applied. Let me explain the cases in which this occurs.

[0153] Furthermore, this is not limited to detecting the approach or contact of an object to be detected, such as a finger or stylus. Various sensors capable of this can also be applied.

[0154] Here, wiring and other components constituting the touch sensor are formed on the outer surface of the second substrate 202. The above shows a configuration of a so-called on-cell type touch panel, but it is not limited to this. For example, external Applying configurations for external (out-cell) and in-cell touch panels. This is also good. By using an on-cell or in-cell touch panel configuration, the display panel Even with the addition of touch panel functionality, the thickness can be reduced.

[0155] The above is an explanation of the cross-sectional configuration examples.

[0156] [Regarding each component] The following sections will explain each of the components listed above.

[0157] 〔substrate〕 A substrate having a flat surface can be used for the display device. The substrate on the side from which the light is extracted uses a material that transmits the light. For example, glass, quartz, etc. Materials such as lamination, sapphire, and organic resins can be used.

[0158] By using a thin substrate, it is possible to make the display device lighter and thinner. By using a substrate with a thickness sufficient to be flexible, a flexible display device can be realized. Cut.

[0159] Examples of glass include alkali-free glass, barium borosilicate glass, and alumino. Glass or similar materials can be used.

[0160] Materials that are flexible and transparent to visible light include, for example, materials that are flexible to a certain degree. Glass of varying thicknesses, polyethylene terephthalate (PET), polyethylene naphthalate Polyester resins such as (PEN), polyacrylonitrile resin, polyimide resin, polymer Chill methacrylate resin, polycarbonate (PC) resin, polyethersulfone (PE) S) Resins, polyamide resins, cycloolefin resins, polystyrene resins, polyamide resins Examples include plastic resins, polyvinyl chloride resins, and polytetrafluoroethylene (PTFE) resins. It is preferable to use a material with a low coefficient of thermal expansion, for example, polyamide-imide. Resins, polyimide resins, PET, etc. can be suitably used. In addition, organic materials can be added to glass fibers. The substrates used are those impregnated with resin, or substrates in which inorganic fillers are mixed with organic resin to lower the coefficient of thermal expansion. It is also possible to use such materials in substrates, as they are lightweight, and the surface of the substrate can be used in this way. The display device can also be made lighter.

[0161] Furthermore, the substrate on the side from which light is not extracted does not need to be translucent, as mentioned above. In addition to the base plate, metal substrates can also be used. Metal substrates have high thermal conductivity and act as a sealing layer. Because heat can be easily conducted across the entire plate, localized temperature increases in the display device can be suppressed. ,preferable.

[0162] There are no particular limitations on the materials that make up the metal substrate, but for example, aluminum, copper, and nickel are used. Preferably, metals such as buckle, or alloys such as aluminum alloy or stainless steel are used. It is possible.

[0163] In addition, insulating treatment is performed by oxidizing the surface of the metal substrate or forming an insulating film on the surface. A substrate that has been treated may be used. For example, a coating method such as spin coating or dip coating, or an electric coating method may be used. An insulating film may be formed using methods such as deposition, vapor deposition, or sputtering, or in an oxygen atmosphere. In addition to leaving it exposed to air or heating it, an oxide film can be formed on the surface of the substrate by methods such as anodizing. That's fine.

[0164] A flexible substrate is coated with a hard coat layer (for example) that protects the surface of the display device from scratches and other damage. (e.g., silicon nitride layer) or a layer of material capable of distributing pressure (e.g., aramid resin layer) The above may be stacked. Also, in order to suppress the reduction in the lifespan of the light-emitting element due to moisture, etc. A flexible substrate may have a low water permeability insulating film laminated on it. For example, nitride Inorganic insulating materials such as silicon oxide nitride, aluminum oxide, and aluminum nitride are used. It is possible to be there.

[0165] The substrate can also be constructed by stacking multiple layers. In particular, it can be configured to include a glass layer. This improves barrier properties against water and oxygen, resulting in a more reliable display device. For example, a substrate can be used in which a glass layer, an adhesive layer, and an organic resin layer are laminated from the side closest to the light-emitting element. This can be achieved by providing such an organic resin layer, which prevents cracking and fractures in the glass layer. This can suppress the growth and improve mechanical strength. By applying composite materials to a substrate, an extremely reliable and flexible display device can be created. It is possible.

[0166] [Transistor] The transistors in the display device have a conductive layer that functions as the front gate electrode, and a back A conductive layer that functions as a gate electrode, a semiconductor layer, and a conductive layer that functions as a source electrode. It has a conductive layer that functions as a drain electrode and an insulating layer that functions as a gate insulating layer. ru.

[0167] In other words, the transistors in the display device according to one aspect of the present invention have gates above and below the channel. It is a structure in which poles are provided.

[0168] The crystallinity of semiconductor materials used in transistors is not particularly limited; amorphous semiconductors are also available. Crystalline semiconductors (microcrystalline semiconductors, polycrystalline semiconductors, single-crystal semiconductors, or semiconductors with a crystalline region in part) Any semiconductor (having a region) may be used. If a semiconductor with crystalline properties is used, This is preferable because it suppresses the degradation of the DISTA characteristics.

[0169] Furthermore, as semiconductor materials used in transistors, for example, oxide semiconductors are used in semiconductor layers. It can be used, especially when applying oxide semiconductors with a larger band gap than silicon. It is preferable to use semiconductors that have a wider band gap and lower carrier density than silicon. Using a conductive material is preferable because it can reduce the current when the transistor is off.

[0170] For example, the above oxide semiconductor may contain at least indium (In) or zinc (Zn). Preferably contains ). More preferably In-M-Zn oxide (where M is Al, Ti, Contains oxides represented by metals such as Ga, Ge, Y, Zr, Sn, La, Ce, or Hf. nothing.

[0171] In particular, the semiconductor layer has multiple crystalline portions, and the c-axis of the crystalline portion is the surface on which the semiconductor layer is formed. Alternatively, grains are observed that are oriented approximately perpendicular to the upper surface of the semiconductor layer, and grain boundaries are observed between adjacent crystalline regions. It is preferable to use an oxide semiconductor layer that is not subjected to this process.

[0172] Such oxide semiconductors do not have grain boundaries, so when the display panel is curved... This suppresses the formation of cracks in the oxide semiconductor layer due to stress. Therefore, Such oxide semiconductors are suitably used in flexible and curved display devices and the like. It is possible.

[0173] Furthermore, by using an oxide semiconductor with such crystalline properties as the semiconductor layer, the electrical properties This suppresses fluctuations and enables the creation of highly reliable transistors.

[0174] Furthermore, transistors using oxide semiconductors with a larger band gap than silicon, Due to its low off-current, the charge stored in the capacitor connected in series with the transistor can be stored for a long period of time. It is possible to hold it over a period of time. By applying such a transistor to a pixel, It is also possible to stop the drive circuit while maintaining the gradation of the image displayed in each display area. As a result, it is possible to realize a display device with extremely reduced power consumption.

[0175] [Conductive layer] In addition to the gate, source, and drain of a transistor, various wiring components make up a display device. Materials that can be used for conductive layers such as electrodes include aluminum, titanium, and chromium. Molybdenum, nickel, copper, yttrium, zirconium, molybdenum, silver, tantalum, or tungsten. Examples include metals such as sten, or alloys in which these are the main component. The film containing the material can be used as a single layer or as a multilayer structure. For example, silicon A single-layer structure containing an aluminum film, a double-layer structure in which an aluminum film is laminated on a titanium film, and tan A two-layer structure consisting of an aluminum film laminated on a gusten film, and a copper-magnesium-aluminum alloy. A two-layer structure with a copper film laminated on a gold film, a two-layer structure with a copper film laminated on a titanium film, tungsten A two-layer structure with a copper film laminated on top of a film, a titanium film or titanium nitride film, and an aluminum film layered on top of that. A three-layer structure is formed by laminating a titanium film or copper film, and then forming a titanium film or titanium nitride film on top of it. A layered structure, a molybdenum film or a molybdenum nitride film, with an aluminum film or layered on top thereof. A three-layer structure in which copper films are stacked, and then a molybdenum film or molybdenum nitride film is formed on top of them. These include, for example. Furthermore, oxides such as indium oxide, tin oxide, or zinc oxide may also be used. Furthermore, using copper containing manganese is preferable because it improves the controllability of the shape through etching. .

[0176] Furthermore, light-transmitting materials can be used for conductive layers such as various wirings and electrodes that constitute the display device. Materials possessing this property include indium oxide, indium tin oxide, and indium zinc oxide. Conductive oxides such as zinc oxide, zinc oxide with added gallium, or graphene are used. It is possible. Or, gold, silver, platinum, magnesium, nickel, tungsten, chromium Metal materials such as molybdenum, iron, cobalt, copper, palladium, or titanium, and the metal Alloy materials containing the material can be used. Alternatively, nitrides of the metal material (e.g., nitrides) can be used. Titanium may be used. Furthermore, metal materials, alloy materials (or nitrides thereof) may be used. If present, it should be thinned to a degree that allows light to pass through. Furthermore, the laminated film of the above material can be used as a conductive layer. It can be used as an alloy of silver and magnesium and indium tin oxide. Using a multilayer film or similar structure is preferable because it can improve conductivity.

[0177] [Insulating layer] Examples of insulating materials that can be used for each insulating layer, overcoat, spacer, etc. include For example, resins such as acrylic and epoxy, and resins having siloxane bonds such as silicone resins. Others include silicon oxide, silicon oxide nitride, silicon nitride, silicon nitride, and aluminum oxide. Inorganic insulating materials such as um can also be used.

[0178] Furthermore, it is preferable that the light-emitting element is provided between a pair of insulating films with low water permeability. This prevents impurities such as water from entering the light-emitting elements, thus suppressing a decrease in the reliability of the device. It can be controlled.

[0179] Examples of insulating films with low water permeability include silicon nitride films and silicon nitride oxide films, which contain nitrogen and silicon. Examples include films containing nitrogen and aluminum, such as aluminum nitride films. Silicon oxide films, silicon oxide nitride films, aluminum oxide films, etc., may also be used.

[0180] For example, the amount of water vapor transmitted through a low-permeability insulating film is 1 × 10⁻⁶ -5 [g / (m 2 ·day) ] Preferably 1 × 10 -6 [g / (m 2 ·day)] Below, more preferably 1×1 0 -7 [g / (m 2 (day) More preferably 1 x 10 -8 [g / (m 2 ·d (ay) and below.

[0181] [Adhesive layer, sealant] Adhesive layers and sealants include UV-curing adhesives, reaction-curing adhesives, and thermo-curing adhesives. Various types of curing adhesives, such as chemical-type adhesives and anaerobic adhesives, can be used. Examples include epoxy resin, acrylic resin, silicone resin, phenolic resin, and polyimide resin. Fat, imide resin, PVC (polyvinyl chloride) resin, PVB (polyvinyl butyral) Examples include resins, EVA (ethylene vinyl acetate) resins, etc. In particular, epoxy resins, etc. A material with low moisture permeability is preferred. Alternatively, a two-component resin may be used. Also, adhesive seals You may use a scrib or similar.

[0182] Furthermore, the above resin may contain a desiccant. For example, an alkaline earth metal oxide (acid Using substances that adsorb moisture by chemical adsorption, such as calcium carbonate or barium oxide. It is possible to remove moisture through physical adsorption, such as with zeolite or silica gel. Adsorbent substances may be used. If a desiccant is included, impurities such as moisture may be absorbed into the functional element. This is preferable because it can deter intrusion and improve the reliability of the display panel.

[0183] Furthermore, by mixing fillers or light-scattering materials with a high refractive index into the above resin, a light-emitting element can be created. The light extraction efficiency from these can be improved. For example, titanium dioxide, barium oxide, Zeolite, zirconium, etc., can be used.

[0184] [Light-emitting element] As the light-emitting element, a self-emitting element can be used, and it will light up when current or voltage is applied. This category includes elements whose degree of control is managed. For example, light-emitting diodes (LEDs), organic EL elements, inorganic EL elements, etc., can be used.

[0185] Light-emitting devices include top-emission type, bottom-emission type, and dual-emission type. Either of the above is acceptable. The electrode that extracts light uses a conductive film that transmits visible light. Furthermore, it is preferable to use a conductive film that reflects visible light on the electrode that does not extract light. stomach.

[0186] The EL layer has at least an emissive layer. The EL layer has layers other than the emissive layer, such as hole injection layers. High-performance materials, materials with high hole transport, hole-blocking materials, materials with high electron transport, electron injection This includes substances with high electron transport and hole transport properties, or bipolar substances (substances with high electron transport and hole transport properties), etc. It may have further layers.

[0187] The EL layer can use either low-molecular-weight compounds or high-molecular-weight compounds, and inorganic compounds It may contain materials. Each layer constituting the EL layer is made by a vapor deposition method (including vacuum deposition). It can be formed by methods such as transfer, printing, inkjet, and coating.

[0188] When a voltage higher than the threshold voltage of the light-emitting element is applied between the cathode and anode, the EL layer on the anode side... Holes are injected from the cathode side, and electrons are injected from the cathode side. The injected electrons and holes are in the EL layer. They recombine, and the light-emitting material contained in the EL layer emits light.

[0189] When using a white light-emitting element as the light-emitting element, two or more types of light-emitting elements are used in the EL layer. It is preferable to have a composition that includes substances. For example, the emission of light from two or more light-emitting substances is related to the complementary color White light emission can be obtained by selecting a light-emitting material that acts in conjunction with the light-emitting material. For example, These are light-emitting substances that exhibit light emission in the following colors: R (red), G (green), B (blue), Y (yellow), O (orange), etc. Or, among luminescent materials that exhibit emission containing two or more spectral components of R, G, and B, It is preferable that it contains 2 or more. Also, the spectrum of emission from the light-emitting element is in the visible light region. A light-emitting element having two or more peaks within a wavelength range (e.g., 350 nm to 750 nm) It is preferable to apply it. Also, the emission spectrum of a material having a peak in the yellow wavelength region. Preferably, the material has spectral components in the green and red wavelength regions.

[0190] The EL layer includes an emissive layer containing an emissive material that emits one color, and an emissive material that emits another color. It is preferable to have a structure in which multiple light-emitting layers are stacked. For example, multiple light-emitting layers in the EL layer The layers may be stacked in contact with each other, or they may be separated by regions that do not contain any light-emitting material. They may be laminated. For example, between the fluorescent emitting layer and the phosphorescent emitting layer, the fluorescent emitting layer or It contains the same material as the phosphorescent layer (e.g., host material, assist material), and either emission The configuration may also include a region that does not contain any optical material. This makes it easier to fabricate the light-emitting element. This also results in a reduction in the drive voltage.

[0191] Furthermore, the light-emitting element may be a single element having one EL layer, or it may have multiple EL layers These may be tandem elements stacked with charge generation layers in between.

[0192] Examples of conductive films that transmit visible light include indium oxide and indium tin oxide (ITO). Indium zinc oxide, zinc oxide, and gallium are added. Zinc oxide with added metals can be used. Also, gold, silver, platinum, magnesium, and nickel can be used. Iron, tungsten, chromium, molybdenum, iron, cobalt, copper, palladium, or titanium Metal materials such as nitrides, alloys containing these metal materials, or nitrides of these metal materials (for example, nitrides Titanium oxide, etc., can also be used by forming them thinly enough to be translucent. The laminated film of the above materials can be used as a conductive layer. For example, a silver-magnesium alloy. Using a multilayer film of ITO is preferable because it can improve conductivity. You may also use lafen or similar materials.

[0193] Conductive films that reflect visible light include, for example, aluminum, gold, platinum, silver, nickel, and tungsten. Metal materials such as stainless steel, chromium, molybdenum, iron, cobalt, copper, or palladium, Alloys containing these metal materials can be used. In addition, the above metal materials and alloys can be treated with ran It may also contain tannins, neodymium, or germanium. Aluminum alloys such as tan alloys, aluminum-nickel alloys, aluminum-neodymium alloys, etc. Alloys containing nium (aluminum alloys), alloys of silver and copper, alloys of silver, palladium and copper, Silver-containing alloys such as silver-magnesium alloys can be used. Silver-containing alloys such as copper alloys can be used. It is preferable due to its high heat resistance. Furthermore, the metal film or metal oxide in contact with the aluminum alloy film. By laminating the film, the oxidation of the aluminum alloy film can be suppressed. Examples of materials for the oxide film include titanium and titanium oxide. Furthermore, the above visible light... A laminated film consisting of a permeable conductive film and a metallic material may be formed. For example, a laminated film of silver and ITO. A multilayer film of a silver-magnesium alloy and ITO can be used.

[0194] The conductive layers can be formed using methods such as vapor deposition or sputtering. In addition, Using ejection methods such as inkjet printing, printing methods such as screen printing, or plating methods It can be formed.

[0195] Furthermore, the above-mentioned light-emitting layer, as well as materials with high hole injection potential, materials with high hole transport potential, and electricity Layers containing materials with high electron transport properties, materials with high electron injection properties, bipolar materials, etc. These include inorganic compounds such as quantum dots, and polymer compounds (oligomers, dendrimers, poly It may have (such as a mer). For example, by using quantum dots as the light-emitting layer, the light-emitting material and It can also be made to function in that way.

[0196] Furthermore, quantum dot materials include colloidal quantum dot materials, alloy-type quantum dot materials, Core-shell type quantum dot materials, core-type quantum dot materials, etc., can be used. Materials containing elemental groups 12 and 16, 13 and 15, or 14 and 16 May be used. Alternatively, cadmium, selenium, zinc, sulfur, phosphorus, indium, tellurium, Quantum dot materials containing elements such as lead, gallium, arsenic, and aluminum may also be used.

[0197] [Colored layer] Materials that can be used for the colored layer include metal materials, resin materials, pigments, or dyes. Examples include resin materials.

[0198] [Light blocking layer] Materials that can be used for the light-shielding layer include carbon black, metal oxides, and multiple golds. Examples include composite oxides containing solid solutions of group oxides. Furthermore, the light-shielding layer may contain the material for the colored layer. Laminated films can also be used. For example, a material used for a colored layer that transmits light of a certain color. A laminated structure is used consisting of a film containing and a film containing a material used for a colored layer that transmits light of other colors. This is possible. By using the same materials for the colored layer and the light-shielding layer, the equipment can be standardized, and the process can be streamlined. It is preferable because it can be simplified.

[0199] [Connection layer] The connection layer connecting the FPC or IC to the terminals uses an anisotropic conductive film (ACF: Anis Anisotropic conductive film (ACP) or anisotropic conductive paste (ACP: Anisotropic Conductive Paste, etc., can be used. ru.

[0200] The above is a description of each component.

[0201] This embodiment may be appropriately combined with other embodiments described herein, at least in part. They can be implemented in combination.

[0202] (Embodiment 3) This embodiment describes an example of a method for manufacturing a display device using a flexible substrate. do.

[0203] Here, light-emitting elements, circuits, wiring, electrodes, and insulating layers, as well as light-shielding layers such as colored layers and light-shielding layers. Layers containing light-emitting elements will be collectively referred to as element layers. For example, an element layer contains a light-emitting element. This includes, in addition to light-emitting elements, wiring that electrically connects to the light-emitting elements, and transistors used in pixels and circuits. It may also be equipped with elements such as a t-axis.

[0204] Furthermore, at the stage when the light-emitting element is completed (the manufacturing process is finished), the element layer is supported A material that is flexible and holds its shape will be called a substrate. For example, a substrate may have a thickness This also includes extremely thin films, etc., ranging in thickness from 10 nm to 300 μm.

[0205] Typical methods for forming an element layer on a substrate that is flexible and has an insulating surface include There are two methods, as listed below. One is to directly form the element layer on a flexible substrate. This is one method. Another method involves forming the element layer on a support substrate different from the flexible substrate. This method involves separating the element layer from the support substrate and then transferring the element layer to the substrate. Although I won't go into detail, in addition to the two methods mentioned above, an element layer is formed on a non-flexible substrate. Another method involves making the substrate flexible by thinning it through polishing or other means.

[0206] If the materials constituting the substrate have heat resistance to the heat generated during the device layer formation process, Forming the element layer directly on the substrate is preferable because it simplifies the process. When the element layer is formed with the plate fixed to the support substrate, transport within and between devices is It is preferable because it makes things easier.

[0207] Furthermore, when using a method in which the element layer is formed on a support substrate and then transferred to a substrate, first the support A release layer and an insulating layer are laminated onto a support base, and an element layer is formed on the insulating layer. Subsequently, a support base The material and the element layer are separated, and the element layer is transferred to the substrate. At this time, the interface between the support substrate and the delamination layer. Therefore, a material should be selected that causes delamination at the interface between the release layer and the insulating layer, or within the release layer itself. In this method, the element layer is formed by using heat-resistant materials for the support substrate and release layer. This allows for an increase in the upper limit of the temperature applied during the process, resulting in the formation of an element layer with more reliable components. This is preferable because it allows for this.

[0208] For example, as a release layer, a layer containing a high melting point metal material such as tungsten, and the metal material Layers containing oxides are stacked and used. In addition, silicon oxide and silicon nitride are used as insulating layers on the release layer. It is preferable to use layers made up of multiple layers of silicon dioxide, silicon oxide nitride, silicon nitride oxide, etc. In this specification, oxidnitrides are defined as having a composition that contains more oxygen than nitrogen. This refers to materials with a high concentration of nitrogen, and nitride oxides, in their composition, have a higher nitrogen content than oxygen. It refers to the material.

[0209] Methods for separating the element layer from the support substrate include applying mechanical force and removing the delamination layer. Examples include chipping or penetrating the peeling interface with a liquid. Alternatively, the difference in thermal expansion between the two layers forming the delamination interface can be used for heating or cooling. The peeling may be performed by this method.

[0210] When initiating delamination, first a starting point for delamination is formed, and the delamination proceeds from that starting point. Preferably, the starting point of the peeling is to locally heat a portion of the insulating layer or peeling layer with laser light or the like. And, by physically cutting or penetrating a part of the insulating layer or release layer with a sharp object, It can be formed.

[0211] Furthermore, if peeling is possible at the interface between the support substrate and the insulating layer, a peeling layer may not be necessary.

[0212] For example, glass is used as the support substrate and an organic resin such as polyimide is used as the insulating layer. This allows for delamination at the interface between the glass and the organic resin. Also, any remaining polyimide, etc. Organic resins can also be used as substrates.

[0213] Alternatively, a heating layer is provided between the support substrate and an insulating layer made of organic resin, and the heating layer is heated. By doing so, delamination may occur at the interface between the heating layer and the insulating layer. The heating layer is a current Materials that generate heat when a fluid is passed through them, materials that generate heat when light is absorbed, and materials to which a magnetic field is applied. Various materials can be used, such as materials that generate heat. For example, the heating layer can be Semiconductors, metals, and insulators can be selected and used.

[0214] The following describes an example of a more specific manufacturing method. By changing the layer formed as the peelable layer, a flexible inlet and outlet according to one aspect of the present invention can be achieved. Force devices can also be manufactured.

[0215] First, island-shaped release layers 303 are formed on the fabricated substrate 301, and the layer to be released 3 is placed on the release layer 303. Form 05 (Figure 13(A)). Separately, island-shaped delamination layers are formed on the fabricated substrate 321. A layer 323 is formed, and a layer to be peeled 325 is formed on the peeling layer 323 (Figure 13(B)).

[0216] Here, we have shown an example of forming island-like exfoliation layers, but this is not the only example. In this process, When peeling the layer to be peeled from the manufactured substrate, the interface between the manufactured substrate and the peeling layer, and the interface between the peeling layer and the layer to be peeled. Alternatively, a material is selected in which delamination occurs within the delamination layer. In this embodiment, the delamination layer and the delamination layer are selected. The example given is when delamination occurs at the interface of the delamination layer, but the combination of materials used for the delamination layer and the layer to be delaminated may vary. This is not limited to this. Furthermore, if the layer to be peeled is a laminated structure, the contact with the peeled layer The layers will be specifically referred to as the first layer.

[0217] For example, if the release layer has a laminated structure of a tungsten film and a tungsten oxide film, Delamination occurs at the interface (or near the interface) between the tungsten film and the tungsten oxide film. It is acceptable for a portion of the delamination layer (in this case, a tungsten oxide film) to remain on the abscission layer side. Also, on the side of the layer being delaminated The remaining peeled layer may be removed afterward.

[0218] The fabricated substrate must have heat resistance sufficient to withstand the processing temperature during the fabrication process. For example, the substrates used for fabrication include glass substrates, quartz substrates, sapphire substrates, semiconductor substrates, and A laminated substrate, a metal substrate, a resin substrate, a plastic substrate, etc., can be used.

[0219] When a glass substrate is used as the fabrication substrate, an oxide film is used as an underlayer between the fabrication substrate and the release layer. insulating films such as silicon films, silicon oxide nitride films, silicon nitride films, and silicon nitride oxide films are formed. This is preferable because it prevents contamination from the glass substrate.

[0220] The delamination layer consists of tungsten, molybdenum, titanium, tantalum, niobium, nickel, and cobalt. Zirconium, zinc, ruthenium, rhodium, palladium, osmium, iridium elements selected from silicon, alloy materials containing said elements, or compound materials containing said elements, etc. It can be formed using [a specific method]. The crystalline structure of the silicon-containing layer can be amorphous, microcrystalline, or polycrystalline. But that's fine too. Also, aluminum oxide, gallium oxide, zinc oxide, titanium dioxide, and zinc oxide. Gold such as zinc, indium tin oxide, indium zinc oxide, and In-Ga-Zn oxide. High-melting-point metals such as tungsten, titanium, and molybdenum may be used in the release layer. Using this material is preferable because it increases the degree of freedom in the process of forming the peelable layer.

[0221] The delamination layer can be formed by methods such as sputtering, plasma CVD, or coating (spin coating). It can be formed by methods such as liquid droplet ejection, dispensing, printing, etc. For example, the wavelength is 10 nm to 200 nm, preferably 20 nm to 100 nm.

[0222] If the delamination layer has a single-layer structure, it may consist of a tungsten layer, a molybdenum layer, or tungsten and molybdenum. It is preferable to form a layer containing a mixture of den. Also, tungsten oxide or A layer containing oxidized nitrides, a layer containing molybdenum oxide or oxidized nitrides, or tungsten A layer containing an oxide or oxidized nitride of a mixture of ammonium and molybdenum may be formed. A mixture of tungsten and molybdenum is, for example, an alloy of tungsten and molybdenum. It is correct.

[0223] Furthermore, the release layer is a laminated structure consisting of a tungsten-containing layer and a tungsten oxide-containing layer. When forming the structure, a layer containing tungsten is formed, and an insulating layer formed of oxide is formed on top of it. By forming a film, the interface between the tungsten layer and the insulating film contains tungsten oxide. The formation of a layer may be utilized. Alternatively, the surface of the tungsten-containing layer may be subjected to thermal oxidation treatment. Treatments using oxygen plasma, nitrous oxide (N2O) plasma, ozonated water, etc., which have strong oxidizing properties. A layer containing tungsten oxide may be formed by treatment with a solution or other means. The processing and heat treatment may involve using oxygen, nitrogen, nitrous oxide alone, or a mixture of these gases with other gases. The procedure may be carried out in a gaseous atmosphere. The surface condition of the peeled layer is determined by the plasma treatment or heat treatment described above. By changing this, it is possible to control the adhesion between the release layer and the insulating film that is formed later. be.

[0224] Furthermore, if peeling is possible at the interface between the fabricated substrate and the peel-off layer, a peel-off layer may not be required. For example, glass is used as the fabrication substrate, and polyimide, polyester, and polyimide are placed in contact with the glass. Organic resins such as polyolefins, polyamides, polycarbonates, and acrylics are formed. Furthermore, by applying laser irradiation or heat treatment, the adhesion between the fabricated substrate and the organic resin is improved. Then, insulating films, transistors, etc. are formed on the organic resin. After that, a higher laser irradiation is performed than before. Perform laser irradiation at a high energy density, or perform heat treatment at a higher temperature than the previous heat treatment. By doing so, the substrate can be peeled off at the interface between the fabricated substrate and the organic resin. Also, during the peeling process, The substrate and the organic resin may be separated by permeating the interface between them with a liquid.

[0225] In this method, insulating films, transistors, etc. are formed on an organic resin with low heat resistance, High temperatures cannot be applied to the substrate during the manufacturing process. Here, a transient using an oxide semiconductor... Since high-temperature manufacturing processes are not required, the material can be suitably formed on organic resin.

[0226] Furthermore, the organic resin may be used as a substrate constituting the device, or the organic resin may be removed. Alternatively, another substrate may be bonded to the exposed surface of the peeled layer using an adhesive. Alternatively, another substrate (support film) may be bonded to the grease using an adhesive.

[0227] Alternatively, a metal layer is placed between the fabricated substrate and the organic resin, and an electric current is passed through the metal layer to form the metal The layer may be heated, and delamination may be performed at the interface between the metal layer and the organic resin.

[0228] The insulating layer (first layer) formed in contact with the delamination layer is a silicon nitride film, or a silicon oxide nitride film. It can be formed in a single layer or multiple layers using a silicon oxide film or a silicon nitride film, etc. Preferably. However, this is not limited to this, and the optimal material can be selected depending on the material used for the release layer. It is possible.

[0229] The insulating layer is formed using methods such as sputtering, plasma CVD, coating, and printing. It is possible to achieve this, for example, by plasma CVD, where the film deposition temperature is 250°C or higher and 400°C or higher. By forming it at temperatures below ℃, a dense and highly moisture-resistant film can be created. The thickness of the insulating layer is 10 nm to 3000 nm, and furthermore, 200 nm to 1500 nm. The bottom is preferable.

[0230] Next, the fabricated substrate 301 and the fabricated substrate 321 are placed so that the surfaces on which the peel-off layers are formed face each other. To achieve this, the two parts are bonded together using the adhesive layer 307, and the adhesive layer 307 is cured (Figure 13( C)).

[0231] Furthermore, it is preferable to perform the bonding of the fabricated substrate 301 and the fabricated substrate 321 under reduced pressure. It's nice.

[0232] Figure 13(C) shows the case where the sizes of the peeling layer 303 and the peeling layer 323 are different. However, as shown in Figure 13(D), a peel layer of the same size may also be used.

[0233] The adhesive layer 307 is connected to the release layer 303, the layer to be released 305, the layer to be released 325, and the release layer 323. They are arranged to overlap. The edges of the adhesive layer 307 are attached to the release layer 303 or release layer 323. It is preferable that it be located inside at least one end (the one you want to peel off first). This prevents strong adhesion between the fabricated substrate 301 and the fabricated substrate 321, and prevents subsequent peeling. This can suppress a decrease in yield to a certain extent.

[0234] The adhesive layer 307 may contain, for example, a photocuring adhesive such as an ultraviolet curing type, a reaction curing adhesive, or a heat-curing adhesive. Various types of curing adhesives, such as curing adhesives and anaerobic adhesives, can be used. Adhesives include epoxy resin, acrylic resin, silicone resin, phenolic resin, and poly Examples include mido resins, imide resins, PVC resins, PVB resins, and EVA resins. In particular, E Materials with low moisture permeability, such as carboxy resin, are preferred. As for the adhesive, it is placed only in the desired area. It is preferable to use a material with low fluidity to the extent that it can be easily bonded. For example, adhesive sheets, tack sheets. Sheet-type or film-type adhesives may also be used. For example, OCA (optical adhesive) A clear adhesive film can be suitably used.

[0235] The adhesive may be tacky before bonding, or it may be heated or exposed to light after bonding. Adhesion may be exhibited by this method.

[0236] Furthermore, the above resin may contain a desiccant. For example, an alkaline earth metal oxide (acid Using substances that adsorb moisture by chemical adsorption, such as calcium carbonate or barium oxide. It is possible to remove moisture through physical adsorption, such as with zeolite or silica gel. Adsorbent substances may be used. If a desiccant is included, the function will be affected by the intrusion of moisture from the air. This is preferable because it can suppress the degradation of the elements and improve the reliability of the device.

[0237] Next, a starting point for delamination is formed by irradiation with laser light (Figure 14(A)(B)).

[0238] The fabricated substrate 301 and the fabricated substrate 321 can be peeled off from either side. The size of the peeling layer is different. In such cases, the substrate may be peeled off from the substrate on which the large peel layer was formed, or from the substrate on which the small peel layer was formed. It may be peeled off from the substrate. A semiconductor element, light-emitting element, or other element may be fabricated on only one of the substrates. In this case, the element may be peeled off from the substrate on the side where it was formed, or from the other substrate. Here, we show an example where the fabricated substrate 301 is peeled off first.

[0239] The laser beam hits the hardened adhesive layer 307, the layer to be peeled off 305, and the peeling layer 303. Irradiate the area (see arrow P1 in Figure 14(A)).

[0240] By removing a portion of the first layer, a starting point for delamination can be formed (circled by the dotted line in Figure 14(B)). (See the region shown). At this time, not only the first layer, but also the other layers of the peeled layer 305 and the peeled layer 3 03. A portion of the adhesive layer 307 may be removed.

[0241] It is preferable to irradiate the substrate with the peeling layer to be peeled off from the substrate side. When irradiating the region where layer 303 and the peeling layer 323 overlap with laser light, the peeling layer 305 and By creating cracks only in the peeled layer 305 of the peeled layer 325, the fabricated base can be selectively produced. The plate 301 and the release layer 303 can be peeled off (see the area enclosed by the dotted line in Figure 14(B)). Here, we show an example of removing a portion of each layer that makes up the peeled layer 305.

[0242] Then, the peeled layer 305 and the fabricated substrate 301 are separated from the starting point of the formed peel (Figure 14(C)(D)). This allows the peelable layer 305 to be removed from the fabricated substrate 301 to the fabricated substrate 321. It can be transposed to this.

[0243] For example, starting from the point of peeling, physical force (processing such as peeling with human hands or jigs, or rollers) The peelable layer 305 and the fabricated substrate 301 are separated by a process such as a separation process while rotating the substrate. That's all you need to do.

[0244] Furthermore, a liquid such as water is permeated into the interface between the release layer 303 and the layer to be released 305 to produce the substrate 3 01 and the peeled layer 305 may be separated. Due to capillary action, the liquid separates from the peeled layer 303 and the peeled layer. It can be easily separated by seeping into the abscission layer 305. Also, when peeling occurs Static electricity adversely affects the functional elements contained in the peeled layer 305 (semiconductor elements can become electrostatically charged It can suppress (such as being destroyed by energy).

[0245] Next, the exposed peelable layer 305 and the substrate 331 are bonded together using the adhesive layer 333. The adhesive layer 333 is cured (Figure 15(A)).

[0246] Furthermore, it is preferable to perform the bonding of the peelable layer 305 and the substrate 331 under a reduced pressure atmosphere. .

[0247] Next, the starting point for delamination is formed by irradiation with laser light (Figure 15(B)(C)).

[0248] The laser beam hits the hardened adhesive layer 333, the layer to be peeled off 325, and the peeling layer 323. Irradiate the area (see arrow P2 in Figure 15(B)). Remove a portion of the first layer. This allows for the formation of a delamination starting point (see the area enclosed by the dotted line in Figure 15(C). Here, the delamination layer is shown). This shows an example of removing a portion of each layer that makes up 325. ) In this case, not only the first layer, Other layers of the peel-off layer 325, or parts of the peel-off layer 323 and adhesive layer 333 may be removed.

[0249] It is preferable to irradiate the fabricated substrate 321, on which the peeling layer 323 is provided, with laser light. .

[0250] Then, the peeled layer 325 and the fabricated substrate 321 are separated from the starting point of the formed peel (Figure 15(D)). This transfers the peelable layer 305 and the peelable layer 325 onto the substrate 331. It is possible.

[0251] Subsequently, another substrate can be attached to the peelable layer 325.

[0252] The exposed peelable layer 325 and the substrate 341 are bonded together by the adhesive layer 343. 43 is cured (Figure 16(A)). Here, an opening is provided in advance in the substrate 341. This shows an example.

[0253] As a result, the layer to be peeled off can be sandwiched between a pair of flexible substrates.

[0254] Then, as shown in Figure 16(B), the unnecessary ends of substrates 331, 341, etc. are cut off. They may be removed by doing so. At this time, a portion of the edges of the peeled layer 305 and the peeled layer 325 may be removed simultaneously. It is okay to cut it.

[0255] By the above method, a flexible device can be fabricated. On the layer to be peeled off, By using the configuration illustrated in the above embodiment, a flexible display device can be manufactured. can.

[0256] In the method for manufacturing a display device according to one aspect of the present invention described above, the peeling layer and the peeled layer are respectively After bonding a pair of fabricated substrates equipped with the feature, a peeling point is formed by irradiation with laser light. Then, the peeling process is carried out after preparing each peeling layer and the layer to be peeled for easier separation. This allows for improved yield in the peeling process.

[0257] Furthermore, after bonding together a pair of fabricated substrates, each having a peelable layer formed on it, The substrate that will make up the device to be manufactured can be peeled off and bonded to the peeled-off layer. Therefore, when bonding the peelable layers together, the fabricated substrates with low flexibility are bonded together. This allows for a higher alignment accuracy of the bonded substrates compared to when flexible substrates are bonded together. It can be improved.

[0258] Furthermore, as shown in Figure 17(A), the end of the region 351 to be peeled off from the peeled layer 305 is It is preferable that it be located inside the edge of the peeling layer 303. This improves the yield of the peeling process. The height can be increased. Also, if there are multiple regions 351, as shown in Figure 17(B) Alternatively, a peeling layer 303 may be provided for each region 351, or as shown in Figure 17(C), Multiple regions 351 may be provided on one of the release layers 303.

[0259] The above is a description of the method for manufacturing a flexible display device.

[0260] This embodiment may be appropriately combined with other embodiments described herein, at least in part. They can be implemented in combination.

[0261] (Embodiment 4) This embodiment describes an example of an electronic device to which a display device according to one aspect of the present invention can be applied. do.

[0262] Electronic devices and lighting devices can be manufactured using a display device according to one aspect of the present invention. Using such a display device, electronic devices and lighting devices with high display quality can be manufactured. One aspect of the present invention Using this display device, electronic devices and lighting devices with good viewing angle characteristics can be manufactured. Using one embodiment of the display device, electronic devices and lighting devices with reduced power consumption can be manufactured. Furthermore, a display device according to one aspect of the present invention can be used to manufacture highly reliable electronic devices and lighting devices. .

[0263] Examples of electronic devices include television equipment, desktop or notebook computers, etc. Computer monitors, digital cameras, digital video cameras, etc. Cameras, digital photo frames, mobile phones, portable game consoles, personal digital assistants, audio players Examples include live-action devices and large-scale game machines such as pachinko machines.

[0264] An electronic device or lighting device according to one aspect of the present invention can be used on the interior or exterior walls of a house or building. Alternatively, it can be incorporated along the curved surfaces of the interior or exterior of a vehicle.

[0265] An electronic device according to one aspect of the present invention may have a secondary battery and uses contactless power transmission. It is preferable that the secondary battery can be recharged.

[0266] Examples of secondary batteries include lithium polymer batteries (lithium-ion batteries) that use a gel-like electrolyte. Lithium-ion secondary batteries such as polymer batteries, nickel-metal hydride batteries, nickel-cadmium batteries, organic Examples include radical batteries, lead-acid batteries, air-based rechargeable batteries, nickel-zinc batteries, and silver-zinc batteries. ru.

[0267] An electronic device according to one aspect of the present invention may have an antenna. The antenna receives a signal. This allows the display unit to show images, information, etc. Also, the electronic device acts as an antenna. Furthermore, if a secondary battery is present, the antenna may be used for contactless power transmission.

[0268] An electronic device according to one aspect of the present invention includes a sensor (force, displacement, position, velocity, acceleration, angular velocity, rotation). Number, distance, light, liquid, magnetism, temperature, chemicals, sound, time, hardness, electric field, electric current, voltage, power (including functions for measuring radiation, flow rate, humidity, gradient, vibration, odor, or infrared radiation) It is acceptable to have it.

[0269] An electronic device according to one aspect of the present invention can have various functions. For example, various information Functions to display (still images, videos, text images, etc.) on the display unit, touch panel function, calendar Functions to display the date or time, and to run various software (programs). Functions include: wireless communication, and reading programs or data recorded on a recording medium. It may have functions, etc.

[0270] Furthermore, in electronic devices having multiple display units, one display unit primarily displays image information. A function that displays one display unit and primarily displays text information on another display unit, or multiple display units It can have functions such as displaying three-dimensional images by displaying images that take parallax into account. Furthermore, in electronic devices having an image receiving unit, the function of taking still images or videos, Functions to automatically or manually correct shadowed images, and to record captured images on a recording medium (external or electronic). It can have functions such as saving to a built-in device and displaying captured images on the display unit. It is possible. However, the functions of an electronic device according to one aspect of the present invention are not limited to these, and various functions It can have.

[0271] Figures 18(A) to (E) show an example of an electronic device having a curved display unit 7000. The display unit 7000 has a curved display surface, and displays information along the curved display surface. This is possible. Furthermore, the display unit 7000 may be flexible.

[0272] The display unit 7000 is manufactured using a display device or the like according to one aspect of the present invention. This reduces power consumption, provides a curved display, and offers highly reliable electronic equipment. can.

[0273] Figures 18(A) and (B) show examples of mobile phones. Figure 18(A) shows mobile phone 71. The mobile phone 7110 shown in Figure 00 and Figure 18(B) consists of a housing 7101 and a display unit 7, respectively. 000, Operation button 7103, External connection port 7104, Speaker 7105, Microphone 71 It has 06, etc. The mobile phone 7110 shown in Figure 18(B) further has a camera 7107 To possess.

[0274] Each mobile phone is equipped with a touch sensor on the display unit 7000. (This allows you to make or write calls.) All operations, such as inputting data, are performed by touching the display unit 7000 with your finger or stylus. It is possible to do so.

[0275] Furthermore, the power can be turned ON or OFF by operating the operation button 7103, and the display unit 7000 You can switch the type of image displayed. For example, from the email composition screen, You can switch to the menu screen.

[0276] Furthermore, a detection device such as a gyro sensor or accelerometer is installed inside the mobile phone. Then, it determines the orientation of the mobile phone (vertical or horizontal) and automatically adjusts the orientation of the display on the display unit 7000. It can be made to switch dynamically. Also, the orientation of the screen display can be switched by the display unit. Touching the 7000, operating the control button 7103, or using the microphone 7106 for voice input. This can also be done by inputting information, etc.

[0277] Figures 18(C) and (D) show an example of a personal digital assistant (PDCA) device. Figure 18(C) shows a personal digital assistant device. The portable information terminal 7210 shown in Figure 18(D) is comprised of the housing 7201 and, respectively, the housing 7201 and It has a display unit 7000. Furthermore, it has operation buttons, an external connection port, a speaker, a microphone, and It may have a tank, camera, or battery, etc. The display unit 7000 has a touch sensor. It is equipped with a stylus. The mobile information terminal is operated by touching the display unit 7000 with a finger or stylus. It can be done in this way.

[0278] The portable information terminal exemplified in this embodiment is, for example, a telephone, a notebook, or an information viewing device. It has one or more functions selected from among them. Specifically, as a smartphone, This can be used. The portable information terminal exemplified in this embodiment is, for example, a mobile phone, an electric phone. Email, document viewing and creation, music playback, internet communication, computer games, etc. It can run various applications.

[0279] The personal digital assistant 7200 and personal digital assistant 7210 display text and image information, etc., on their multiple devices. It can be displayed on the surface. For example, as shown in Figures 18(C) and (D), there are three operation buttons. The information 7202, represented by a rectangle, can be displayed on one side, and the information 7203, represented by a rectangle, can be displayed on the other side. Figure 18(C) shows an example where information is displayed on the top of the mobile device, and Figure 18(D) Now, let's look at an example where information is displayed on the side of a mobile device. Also, let's look at an example where information is displayed on three or more sides of a mobile device. Information may be displayed there.

[0280] For example, notifications from social networking services (SNS) are an example of this type of information. , a display indicating incoming emails or phone calls, the subject or sender name of emails, etc. This includes the date, time, battery level, and antenna signal strength. Alternatively, the information may be displayed. Instead of information, you may display operation buttons, icons, or other elements in the same location.

[0281] For example, a user of the personal digital assistant 7200 would carry the personal digital assistant 7200 in the breast pocket of their clothing. With the device stored, you can check its display (information 7203 in this case).

[0282] Specifically, the mobile information terminal 7200 records the caller's phone number or name, etc., of the incoming call. It will be displayed in a position where it can be observed from above. The user will take the 7200 personal information terminal out of their pocket. Without having to take it out, you can check the display and decide whether or not to answer the call.

[0283] Figure 18(E) shows an example of a television system. The television system 7300 consists of a housing 7 The display unit 7000 is incorporated into 301. Here, the stand 7303 connects to the housing 7 This shows the configuration that supported 301.

[0284] The operation of the television device 7300 shown in Figure 18(E) is performed using the operating system provided on the housing 7301. This can be done via a switch or a separate remote control unit 7311. Alternatively, the display unit 70 00 may be equipped with a touch sensor, and can be operated by touching the display unit 7000 with a finger, etc. This is also acceptable. The remote control unit 7311 displays the information output from the remote control unit 7311. It may have a display unit that shows the following. The remote control unit 7311 has operation keys or touch The control panel allows you to operate the channel and volume, and the information displayed on the display unit 7000 is shown. You can manipulate the displayed video.

[0285] The television system 7300 will consist of a receiver and a modem, etc. The device can receive regular television broadcasts. It can also receive broadcasts via a modem via wired or By connecting to a wireless communication network, one-way communication (from sender to receiver) or It is also possible to communicate information in two directions (between a sender and receiver, or between receivers). be.

[0286] Figure 18(F) shows an example of a lighting device having a curved light-emitting section.

[0287] The light-emitting part of the lighting device shown in Figure 18(F) uses a display device or the like according to one aspect of the present invention. It is manufactured. According to one aspect of the present invention, power consumption is reduced, and it is equipped with a curved light-emitting part, We can provide highly reliable lighting equipment.

[0288] The light-emitting section 7411 of the lighting device 7400 shown in Figure 18(F) has two convexly curved parts The light-emitting parts are arranged symmetrically. Therefore, the lighting device 7400 is centered around It can illuminate in all directions.

[0289] Furthermore, the light-emitting section 7411 of the lighting device 7400 may be flexible. The 7411 is fixed with a plastic component or a movable frame or other component, and the light is emitted according to the application. The light-emitting surface of part 7411 may be configured to be freely curved.

[0290] The lighting device 7400 includes a base 7401 equipped with an operating switch 7403, and on the base 7401 It has a supported light-emitting section 7411.

[0291] Here, we have provided an example of a lighting device in which the light-emitting part is supported by a base, but the light-emitting part The enclosure equipped with this feature can also be fixed to the ceiling or suspended from the ceiling. Because the light-emitting surface can be curved, it is possible to curve the light-emitting surface into a concave shape to illuminate a specific area. It can illuminate a room with a light source, or the light-emitting surface can be curved into a convex shape to brightly illuminate the entire room.

[0292] Figures 19(A) to (I) show a display section 7001 that is flexible and can be bent. An example of a mobile information terminal is shown.

[0293] The display unit 7001 is manufactured using a display device or the like according to one aspect of the present invention. For example, the curvature half This can be used for display devices and the like that can be bent to a diameter of 0.01 mm or more and 150 mm or less. The display unit 7001 may also be equipped with a touch sensor, and the display unit 7001 can be touched with a finger or the like. A mobile information terminal can be operated with this. According to one aspect of the present invention, a flexible display It is possible to provide electronic equipment that is equipped with a reliable component.

[0294] Figures 19(A) and (B) are perspective views showing an example of a personal digital assistant (PDTA). PDTA 75 00 represents the housing 7501, display unit 7001, pull-out member 7502, operation buttons 7503, etc. It has.

[0295] The portable information terminal 7500 has a flexible display unit wound in a roll inside the housing 7501. It has a 7001. The display unit 7001 can be pulled out using the pull-out member 7502. ru.

[0296] Furthermore, the 7500 portable information terminal is capable of receiving video signals via its built-in control unit, and it can receive The generated video can be displayed on the display unit 7001. In addition, the portable information terminal 7500 has It has a built-in battery. Furthermore, the 7501 housing has a terminal section for connecting a connector, and the display... The image signal and power may also be supplied directly from an external source via a wired connection.

[0297] Additionally, the 7503 control button allows you to turn the power on and off, and switch the displayed image. This can be done. Note that in Figures 19(A) and (B), the side of the mobile information terminal 7500 An example is shown in which the operation buttons 7503 are placed on the surface, but this is not the only example, for the portable information terminal 7500. It may be placed on the same side as the display surface (the front side) or on the back side.

[0298] Figure 19(B) shows the portable information terminal 7500 with the display unit 7001 extended. In this state, video can be displayed on the display unit 7001. Also, part of the display unit 7001 Figure 19(A) shows the rolled-up state, and Figure 19(B) shows the display unit 7001 pulled out. The mobile information terminal 7500 may be configured to display different information depending on the state. For example, see Figure 19. (A) When the rolled portion of the display unit 7001 is in state (A), This can reduce the power consumption of the 7500 mobile information terminal.

[0299] Furthermore, when the display unit 7001 is pulled out, the display surface of the display unit 7001 becomes flat. To secure it, a reinforcing frame may be provided on the side of the display unit 7001.

[0300] In addition to this configuration, a speaker is installed in the enclosure, and the audio signal received along with the video signal is used. It would also be possible to configure it to output audio.

[0301] Figures 19(C) to (E) show an example of a foldable portable information terminal. In Figure 19(D), the unfolded state is shown, while in Figure 19(D), either the unfolded or folded state is shown. Figure 19(E) shows the state in between, where the portable information terminal 7 is in a folded state. It shows 600. The 7600 portable information terminal is highly portable when folded, and when unfolded... In this state, the seamless, wide display area provides excellent readability.

[0302] The display unit 7001 is supported by three housings 7601 connected by hinges 7602. It is. By bending the two housings 7601 via the hinge 7602, portable information The 7600 device can be reversibly transformed from an unfolded state to a folded state.

[0303] Figures 19(F) and (G) show an example of a foldable portable information terminal. Figure 19(F) In Figure 19(G), the display unit 7001 is folded inwards. This shows the 7650 mobile information terminal in a folded state with 7001 on the outside. The terminal 7650 has a display unit 7001 and a non-display unit 7651. When not in use, the display unit 7001 is folded inwards. It can suppress dirt and scratches.

[0304] Figure 19(H) shows an example of a flexible portable information terminal. Portable information terminal 7700 is It has a housing 7701 and a display unit 7001. Furthermore, it has an input unit, which is a button 7703a. 7703b, audio output section (speaker) 7704a, 7704b, external connection port 770 5. It may have a microphone 7706, etc. Also, the portable information terminal 7700 is flexible. It can be equipped with a battery 7709. The battery 7709 is, for example, a display unit 700 It may be placed on top of number 1.

[0305] The housing 7701, the display unit 7001, and the battery 7709 are flexible. Therefore, To curve the personal digital assistant 7700 into a desired shape, and to twist the personal digital assistant 7700 It is easy to add this. For example, the portable information terminal 7700 has a display unit 7001 inside Alternatively, it can be folded outwards for use. It can also be used in a rolled state. In this way, the housing 7701 and the display unit 7 Because 001 can be freely deformed, the mobile information terminal 7700 will not fall if it is dropped. Furthermore, it has the advantage of being less prone to damage even if unintended external forces are applied.

[0306] Furthermore, because the 7700 portable information terminal is lightweight, the top of the 7701 casing can be held with a clip or similar. Do not use by holding it and hanging it, or by fixing the 7701 enclosure to a wall with magnets or the like. It can be used conveniently in a variety of situations.

[0307] Figure 19(I) shows an example of a wristwatch-type personal information terminal. The personal information terminal 7800 is a van. It has a dome 7801, a display unit 7001, input / output terminals 7802, operation buttons 7803, etc. The 7801 has the function of a housing. The portable information terminal 7800 has flexibility. The battery 7805 can be installed. The battery 7805 is, for example, installed in the display unit 70 It may be placed in conjunction with 01 or band 7801, etc.

[0308] The band 7801, the display unit 7001, and the battery 7805 are flexible. Furthermore, the 7800 portable information terminal can be easily bent into a desired shape.

[0309] The 7803 control button is used for time setting, power on / off, wireless communication on, and more. Various functions such as operation, activation and deactivation of silent mode, and activation and deactivation of power saving mode. It can be made to hold it. For example, the operating system built into the personal digital assistant 7800 The system also allows you to freely configure the function of the control button 7803.

[0310] Furthermore, by touching the icon 7804 displayed on the display unit 7001 with your finger, etc., the application You can start the application.

[0311] Furthermore, the 7800 portable information terminal can perform short-range wireless communication compliant with communication standards. It is possible. For example, by communicating with a wireless headset, hands-free communication is possible. You can also make calls using Lee.

[0312] Furthermore, the personal information terminal 7800 may also have an input / output terminal 7802. If 802 is present, data can be exchanged directly with other information terminals via a connector. This is possible. Furthermore, charging can also be performed via the input / output terminal 7802. Note that this implementation... The charging operation of the portable information terminal exemplified by its form is performed by contactless power transmission without using input / output terminals. You may go.

[0313] Figure 20(A) shows the exterior of the 7900 automobile. Figure 20(B) shows the driver's seat of the 7900 automobile. This shows that the automobile 7900 consists of the body 7901, wheels 7902, windshield 7903, and It includes parts such as light 7904 and fog lamp 7905.

[0314] A display device according to one aspect of the present invention can be used in the display unit of an automobile 7900, etc. For example, the display units 7910 to 7917 shown in Figure 20(B) are equipped with a display device according to one embodiment of the present invention. A space can be provided.

[0315] Display units 7910 and 7911 are mounted on the windshield of the automobile. In one embodiment, the electrodes of the display device are made of a light-transmitting conductive material. Therefore, it can be used as a display device that is transparent, allowing the other side to be seen through, a so-called see-through display device. If the display device is transparent, it will not obstruct the driver's view when driving a car 7900. Therefore, a display device according to one aspect of the present invention is installed on the windshield of an automobile 7900. It is possible. Furthermore, if transistors or the like are provided in the display device, organic semiconductors are used. Transmissive materials such as organic transistors or oxide semiconductors It is advisable to use a transistor that has [a certain characteristic].

[0316] The display unit 7912 is located on the pillar. The display unit 7913 is located on the dashboard. It is provided in the following location. For example, the image from the imaging unit installed on the vehicle body is displayed on the display unit 7912. By extending it, the view obstructed by the pillar can be compensated for. Similarly, the display unit 79 In 13, the view obstructed by the dashboard can be compensated for, and in the display unit 7914, It can compensate for the view obstructed by the doors. In other words, imaging is provided on the outside of the car. By displaying video from the unit, blind spots can be compensated for, and safety can be enhanced. By displaying images that fill in the gaps in the unseen areas, safety checks can be performed more naturally and without any sense of unease. It is possible.

[0317] Furthermore, the display unit 7917 is located on the handle. Display unit 7915, display unit 791 6, or the display unit 7917, shows navigation information, speedometer, tachometer, and distance. It can provide various information such as distance traveled, fuel level, gear status, and air conditioning settings. It can be customized to the user's preferences. Furthermore, the display items and layout shown on the display unit can be customized to the user's preferences. The above information can be changed as appropriate. It can also be displayed.

[0318] Furthermore, display units 7910 to 7917 can also be used as lighting devices.

[0319] The display unit to which a display device according to one aspect of the present invention is applied may be planar. In this case, the present invention A display device in one embodiment may have a configuration that does not have curved surfaces or flexibility.

[0320] Figures 20(C) and (D) show digital signage. An example of a sub-sign is shown. The digital signage consists of a housing 8000, a display unit 8001, and a sub-sign. It has a Pika 8003, etc. Furthermore, it has an LED lamp, an operation key (power switch, or operation key). It may include a switch, connection terminals, various sensors, a microphone, etc.

[0321] Figure 20(D) shows a digital signage display mounted on a cylindrical column.

[0322] The larger the display unit 8001, the more information can be provided at once. The wider the display area 8001, the more easily it catches people's attention, which can, for example, enhance the effectiveness of advertising. can.

[0323] By applying a touch panel to the display unit 8001, images or videos can be displayed on the display unit 8001. It is desirable that it not only displays information but also allows users to operate it intuitively. Furthermore, route information... Alternatively, if used for purposes such as providing traffic information, intuitive operation is possible. This can improve usability.

[0324] The portable game console shown in Figure 20(E) consists of a casing 8101, a casing 8102, and a display unit 8103. Display unit 8104, microphone 8105, speaker 8106, operation key 8107, It includes the Tyrus 8108, etc.

[0325] The portable game console shown in Figure 20(E) has two display units (display unit 8103 and display unit 810 4) It has. Note that the number of display units in an electronic device according to one aspect of the present invention is not limited to two. It may be one or three or more. When an electronic device has multiple display units, at least At least one display unit may have a display device according to one aspect of the present invention.

[0326] Figure 20(F) shows a notebook personal computer, consisting of a casing 8111 and a display unit 811 2. It includes a keyboard 8113, a pointing device 8114, etc.

[0327] A display device according to one embodiment of the present invention can be applied to the display unit 8112.

[0328] Figure 21(A) shows the external appearance of the camera 8400 with the viewfinder 8500 attached. show.

[0329] The camera 8400 consists of the housing 8401, the display unit 8402, the operation buttons 8403, and the shutter. It has buttons 8404, etc. The camera 8400 also has a detachable lens 8406. It is attached.

[0330] Here, we'll use camera 8400 and replace lens 8406 by removing it from housing 8401. The configuration allows for this, but the lens 8406 and the housing may be integrated.

[0331] Camera 8400 can take an image by pressing the shutter button 8404. Furthermore, the display unit 8402 has the function of a touch panel, and touching the display unit 8402... This also makes it possible to take images.

[0332] The camera 8400's housing 8401 has a mount with electrodes, and the viewfinder 850 In addition to the above, a strobe device and other equipment can be connected.

[0333] The viewfinder 8500 consists of a housing 8501, a display unit 8502, buttons 8503, etc. .

[0334] The housing 8501 has a mount that engages with the mount of the camera 8400, The mount 8500 can be attached to the camera 8400. The mount also has electrodes. The electrode has the ability to display images and other data received from the camera 8400 on the display unit 8502. It can be done.

[0335] Button 8503 functions as a power button. Button 8503 controls the display. You can switch the display of 8502 on or off.

[0336] The display unit 8402 of the camera 8400 and the display unit 8502 of the viewfinder 8500 are equipped with this A display device according to one embodiment of the invention can be applied.

[0337] Note that in Figure 21(A), the camera 8400 and the viewfinder 8500 are treated as separate electronic devices. These were made detachable, but the housing 8401 of the camera 8400 is one aspect of the present invention. A viewfinder equipped with a display device may be built in.

[0338] Figure 21(B) shows the external appearance of the head-mounted display 8200.

[0339] The head-mounted display 8200 consists of a mounting part 8201, lenses 8202, and a main body 82 03, it has a display unit 8204, a cable 8205, etc. Also, the mounting part 8201 has It has a built-in 8206 battery.

[0340] Cable 8205 supplies power from battery 8206 to main unit 8203. Main unit 82 03 is equipped with a wireless receiver and displays video information such as received image data on the display unit 8204. It can also detect the movement of the user's eyeballs and eyelids using a camera located on the main unit 8203. By capturing the user's perspective and calculating the coordinates of their viewpoint based on that information, the user's viewpoint is determined. It can be used as an input unit.

[0341] Furthermore, the attachment portion 8201 may be provided with multiple electrodes in positions that come into contact with the user. The main unit 8203 detects the current flowing through the electrodes in response to the user's eye movements, It may also have a function to recognize the user's viewpoint. Furthermore, it may detect the current flowing through the electrode. By doing so, it may have a function to monitor the user's pulse. Also, the attachment part 820 1 may have various sensors such as a temperature sensor, a pressure sensor, and an acceleration sensor. The display unit 8204 may also have a function to display the user's biometric information. The movement of the unit is detected, and the image displayed on the display unit 8204 is changed in accordance with that movement. That's good too.

[0342] A display device according to one aspect of the present invention can be applied to the display unit 8204.

[0343] Figures 21(C) and (D) show the external appearance of the head-mounted display 8300. .

[0344] The head-mounted display 8300 consists of a housing 8301, two display units 8302, and an operating system. It has a button 8303 and a band-shaped fastener 8304.

[0345] The head-mounted display 8300 is a successor to the head-mounted display 8200 mentioned above. In addition to its existing functions, it is equipped with two display units.

[0346] Having two display units 8302 allows the user to view one display unit per eye. This allows for high resolution even when performing 3D displays using parallax. It can display images. Furthermore, the display unit 8302 is an arc roughly centered on the user's eyes. It is curved in a specific shape. This ensures that the distance from the user's eye to the display surface of the display unit remains constant. Therefore, users can see more natural images. In addition, the brightness and color of the light from the display unit Even in cases where the display changes depending on the viewing angle, the normal direction of the display surface of the display unit Because the user's eyes are positioned there, the effect can be practically ignored, resulting in a more realistic feel. It can display images that have a certain feature.

[0347] Operation button 8303 has functions such as a power button. In addition to operation button 8303 It may have buttons.

[0348] Furthermore, as shown in Figure 21(E), there is a lens between the display unit 8302 and the user's eye position. It may have a lens 8305. The lens 8305 magnifies the display unit 8302 for the user. This allows you to experience it, which enhances the sense of realism. At this time, as shown in Figure 21(E) It may also have a dial 8306 for changing the position of the lens to adjust the diopter.

[0349] A display device according to one aspect of the present invention can be applied to the display unit 8302. Because the display device has extremely high resolution, lens 8305 is used as shown in Figure 21(E). Even when enlarged, the user cannot see the individual pixels, resulting in a more realistic image. It is possible.

[0350] Figures 22(A) to (C) show an example where there is one display unit 8302. This configuration allows for a reduction in the number of parts.

[0351] The display unit 8302 has two regions, left and right, each containing an image for the right eye and an image for the left eye. Images can be displayed side by side. This allows for the display of stereoscopic images using binocular parallax. It is possible.

[0352] Furthermore, even if a single image visible to both eyes is displayed across the entire area of ​​the display unit 8302, Good. This makes it possible to display a panoramic image across both edges of the field of view, It feels more real.

[0353] Furthermore, as shown in Figure 22(C), a lens 8305 may be provided. The display unit 8302 has, You can display two images side by side, or you can display one image on the display unit 8302 and then... A configuration that allows both eyes to see the same image via the Z8305 is also possible.

[0354] This embodiment may be appropriately combined with other embodiments described herein, at least in part. They can be implemented in combination. [Examples]

[0355] In a display device according to one aspect of the present invention, calculations are performed regarding the time required for charging and discharging each wire. Figure 26(A) is a block diagram of the display device used in the calculation. Figure 26(B) is a block diagram of the display device used in the calculation. This is a circuit diagram of the pixels corresponding to the manufactured top view.

[0356] The block diagram of the display device shown in Figure 26(A) is 7680 × 4320 × R 65 inches. A so-called 8K panel has pixels composed of sub-pixels arranged in GBW (red, green, blue, white) stripes. This represents the gate. The scan line drive circuits (Gate Drivers) located on both sides are gates. It is a GoA (Global Oxide Array), and scan signals are sent to the pixels (PIX) from both scan line drive circuits. The output configuration was chosen. The signal line drive circuit (Source Driver) is external (Ex (ternal)

[0357] Figure 26(B) is a circuit diagram of the pixel (PIX) shown in Figure 26(A). The circuit diagram shown in Figure 7(A) is the same as the circuit diagram explained in Figure 7(A), but with a different arrangement of the capacitive element C2. This corresponds to the updated configuration.

[0358] The configuration shown in Figure 26(B) is similar to that in Figure 7(A), the first gate in transistor M4 The gate electrode and the second gate electrode are not connected. This configuration allows the gates to interact with each other. Compared to the case where the electrodes are connected, the gate capacitance between the scan line GL and the transistor is the first It can be formed only between the gate electrode and the other element.

[0359] Figure 27 is a top view of the pixel (PIX) corresponding to Figure 26(B). Pixel shown in Figure 27 This diagram illustrates the four subpixels of RGBW. Note that the same symbols are used for the corresponding components in the circuit diagram. It is attached. Using the configurations shown in Figures 26(A), (B), and 27, scan lines and signals We estimated the time required for charging and discharging each wire. All calculations are performed using SILVACO's software "SmartSpice". The pixel size is 188 μm × 188 μm, and the channel length L / of transistor M4 is... The channel width (W) was set to 4 μm / 4 μm, and the L / W of transistor M5 was set to 6 μm / 6 μm. .

[0360] The calculation results are shown in Table 1. In Table 1, "Gate fall time" refers to the scan time. The time it takes for the signal to fall off a line, "Source line charge time" "(>95%)" is the time required to charge the signal line to 95%, and "Total" is the same as the previous two. The total time, "One horizontal period," represents one horizontal scanning period. They are doing it.

[0361] [Table 1]

[0362] As shown in Table 1, the charge and discharge times in the scan lines and signal lines are within one horizontal scanning period. Therefore, a display device to which one aspect of the present invention is applied has transients connected to the scan line It was found that the reduced gate capacity of the star makes it suitable for 8K panels. [Explanation of Symbols]

[0363] GL scan lines SL signal line V0 Wiring ANODE current supply line M1 Transistor M2 Transistor M3 Transistor C1 Capacitive element EL light-emitting element CATHODE Common Wiring 100 transistors 102 circuit boards 104 Insulating layer 106 Conductive layer 10⁸ Oxide semiconductor layer 110 Insulating layer 112 Oxide semiconductor layer 116 Insulating layer 108i channel area 108s Source Area 108d Drain area 141a opening 141b opening 120a conductive layer 120b conductive layer 151 Conductive layer 152 Conductive layer 153 Insulating layer 161 Oxide semiconductor layer 162 Oxide semiconductor layer 163 Oxide semiconductor layer 164 Insulating layer 171 Oxide semiconductor layer 172 Oxide semiconductor layer 173 Oxide semiconductor layer 174 Insulating layer 181 Conductive layer 182 Conductive layer 183 Conductive layer 184 Conductive layer 185 Conductive layer 186 Insulating layer 187 Insulating layer 190 opening 191 Conductive layer 192 Conductive layer 193 Insulating layer 198 Emitting layer 199 Partition layer 10 Display device 11 pixel section 12 Scan line drive circuit 13. Signal line drive circuit 15 Terminal section 16a Wiring 16b Wiring 22 areas 24 areas M4 Transistor M5 Transistor M6 Transistor M7 Transistor M8 Transistor M9 Transistor M10 Transistor M11 Transistor C2 Capacitive element C3 Capacitive element C4 Capacitive element C5 Capacitive element GL1 scan lines GL2 scan lines GL3 scan lines GL4 scan lines V1 Wiring V2 wiring 201 circuit board 202 circuit boards 211 Insulating layer 212 Insulating layer 213 Insulating layer 214 Insulating layer 215 Spacer 216 Insulating layer 217 Insulating layer 218 Insulating layer 220 Adhesive layer 221 Insulating layer 222 EL layer 223 Electrode 224 Optical adjustment layer 225 Pixel Electrodes 230a Structure 230b Structure 231 Light blocking layer 232 Colored layer 242 FPC 243 Connectivity Layer 250 space 251 transistors 252 transistors 253 Capacitive elements 254 Light-emitting element 255 transistors 260 Sealing material 261 Adhesive layer 262 Adhesive layer 271 Semiconductor layer 272 Conductive layer 273 Conductive layer 274 Conductive layer 275 Conductive layer 276 Insulating layer 291 Conductive layer 292 Conductive layer 293 Conductive layer 294 Insulating layer 295 Adhesive layer 296 circuit boards 297 FPC 298 Connectivity Layer 299 Terminal section 301 Fabricated substrate 303 Exfoliation layer 305 Peeling layer 307 Adhesive layer 321 Fabricated substrate 323 Exfoliation layer 325 Peeling layer 331 circuit boards 333 Adhesive layer 341 circuit board 343 Adhesive layer 351 areas 7000 Display 7001 Display section 7100 Mobile Phone 7101 enclosure 7103 Operation Buttons 7104 External connection port 7105 Speaker 7106 Microphone 7107 Camera 7110 Mobile phone 7200 Mobile Information Terminal 7201 enclosure 7202 Operation Buttons 7203 Information 7210 Mobile Information Terminal 7300 Television equipment 7301 enclosure 7303 Stand 7311 Remote Control Unit 7400 Lighting device 7401 Daibu 7403 Operation switch 7411 Light-emitting part 7500 Mobile Information Terminals 7501 enclosure 7502 component 7503 Operation Buttons 7600 Mobile Information Terminal 7601 enclosure 7602 Hinge 7650 Mobile Information Terminal 7651 Hidden part 7700 Mobile Information Terminal 7701 enclosure 7703a button 7703b button 7704a speaker 7704b speaker 7705 External connection port 7706 Mike 7709 Battery 7800 Mobile Information Terminal 7801 Band 7802 Input / output terminal 7803 Operation Buttons 7804 Icon 7805 Battery 7900 automobiles 7901 Car body 7902 Wheel 7903 Windshield 7904 Light 7905 Fog Lights 7910 Display section 7911 Display section 7912 Display section 7913 Display section 7914 Display section 7915 Display section 7916 Display section 7917 Display section 8000 units 8001 Display section 8003 Speaker 8101 enclosure 8102 enclosure 8103 Display section 8104 Display section 8105 Microphone 8106 speaker 8107 Operation Keys 8108 Stylus 8111 enclosure 8112 Display section 8113 Keyboard 8114 Pointing device 8200 Head-Mounted Display 8201 Mounting part 8202 Lens 8203 Main Unit 8204 Display section 8205 Cable 8206 Battery 8300 Head-Mounted Display 8301 enclosure 8302 Display section 8303 Operation Buttons 8304 Fixtures 8305 Lens 8306 Dial 8400 Camera 8401 enclosure 8402 Display section 8403 Operation Buttons 8404 Shutter button 8406 Lens 8500 Finder 8501 enclosure 8502 Display section 8503 button

Claims

1. The pixel portion includes a first to third transistor, a light-emitting element, a signal line, a current supply line, and wiring. The first transistor has the function of controlling the supply of current from the current supply line to the light-emitting element according to a signal corresponding to the image data input to the signal line. Either the source or the drain of the second transistor is electrically connected to the signal line. The second transistor has the function of controlling the input of a signal corresponding to the image data to the first transistor. The source or drain of the third transistor is electrically connected to the pixel electrode of the light-emitting element. The source or drain of the third transistor is a light-emitting device electrically connected to the wiring, A first conductive film having the function of a first gate electrode of the first transistor, A semiconductor film having a region positioned above the first conductive film and having a channel formation region for the first transistor, A second conductive film having a region positioned above the semiconductor film and functioning as the second gate electrode of the first transistor, A first insulating film having a region positioned above the second conductive film, A third conductive film having a region positioned above the first insulating film, A fourth conductive film having a region positioned above the first insulating film, A fifth conductive film having a region positioned above the first insulating film and electrically connected to the second conductive film, A sixth conductive film having a region positioned above the first insulating film, A seventh conductive film having a region positioned above the first insulating film and functioning as wiring, A second insulating film having a region positioned above the third conductive film, a region positioned above the fourth conductive film, a region positioned above the fifth conductive film, a region positioned above the sixth conductive film, and a region positioned above the seventh conductive film, An eighth conductive film having a region positioned above the second insulating film, electrically connected to the fourth conductive film, and functioning as the current supply line, A ninth conductive film having a region positioned above the second insulating film, electrically connected to the sixth conductive film, and functioning as the signal line, The third conductive film is electrically connected to the pixel electrode of the light-emitting element. The eighth conductive film has a region that overlaps with the seventh conductive film, The eighth conductive film has a shape that extends across at least two adjacent pixels, The ninth conductive film has a shape that extends across at least two adjacent pixels. Light-emitting device.

2. The pixel portion includes a first to third transistor, a light-emitting element, a signal line, a current supply line, and wiring. The first transistor has the function of controlling the supply of current from the current supply line to the light-emitting element according to a signal corresponding to the image data input to the signal line. Either the source or the drain of the second transistor is electrically connected to the signal line. The second transistor has the function of controlling the input of a signal corresponding to the image data to the first transistor. The source or drain of the third transistor is electrically connected to the pixel electrode of the light-emitting element. The source or drain of the third transistor is a light-emitting device electrically connected to the wiring, A first conductive film having the function of a first gate electrode of the first transistor, A semiconductor film having a region positioned above the first conductive film and having a channel formation region for the first transistor, A second conductive film having a region positioned above the semiconductor film and functioning as the second gate electrode of the first transistor, A first insulating film having a region positioned above the second conductive film, A third conductive film having a region positioned above the first insulating film, A fourth conductive film having a region positioned above the first insulating film, A fifth conductive film having a region positioned above the first insulating film and electrically connected to the second conductive film, A sixth conductive film having a region positioned above the first insulating film, A seventh conductive film having a region positioned above the first insulating film and functioning as wiring, A second insulating film having a region positioned above the third conductive film, a region positioned above the fourth conductive film, a region positioned above the fifth conductive film, a region positioned above the sixth conductive film, and a region positioned above the seventh conductive film, An eighth conductive film having a region positioned above the second insulating film, electrically connected to the fourth conductive film, and functioning as the current supply line, A ninth conductive film having a region positioned above the second insulating film, electrically connected to the sixth conductive film, and functioning as the signal line, Each of the third conductive film, the fourth conductive film, the fifth conductive film, the sixth conductive film, and the seventh conductive film has a region in contact with the second insulating film. The third conductive film is electrically connected to the pixel electrode of the light-emitting element. The eighth conductive film has a region that overlaps with the seventh conductive film, The eighth conductive film has a shape that extends across at least two adjacent pixels, The ninth conductive film has a shape that extends across at least two adjacent pixels. Light-emitting device.

3. The pixel portion includes a first to third transistor, a light-emitting element, a signal line, a current supply line, and wiring. The first transistor has the function of controlling the supply of current from the current supply line to the light-emitting element according to a signal corresponding to the image data input to the signal line. Either the source or the drain of the second transistor is electrically connected to the signal line. The second transistor has the function of controlling the input of a signal corresponding to the image data to the first transistor. The source or drain of the third transistor is electrically connected to the pixel electrode of the light-emitting element. The source or drain of the third transistor is a light-emitting device electrically connected to the wiring, A first conductive film having the function of a first gate electrode of the first transistor, A semiconductor film having a region positioned above the first conductive film and having a channel formation region for the first transistor, A second conductive film having a region positioned above the semiconductor film and functioning as the second gate electrode of the first transistor, A first insulating film having a region positioned above the second conductive film, A third conductive film having a region positioned above the first insulating film, A fourth conductive film having a region positioned above the first insulating film, A fifth conductive film having a region positioned above the first insulating film and electrically connected to the second conductive film, A sixth conductive film having a region positioned above the first insulating film, A seventh conductive film having a region positioned above the first insulating film and functioning as wiring, A second insulating film having a region positioned above the third conductive film, a region positioned above the fourth conductive film, a region positioned above the fifth conductive film, a region positioned above the sixth conductive film, and a region positioned above the seventh conductive film, An eighth conductive film having a region positioned above the second insulating film, electrically connected to the fourth conductive film, and functioning as the current supply line, A ninth conductive film having a region positioned above the second insulating film, electrically connected to the sixth conductive film, and functioning as the signal line, The third conductive film is electrically connected to the pixel electrode of the light-emitting element. The eighth conductive film has a region that overlaps with the second conductive film, The eighth conductive film has a region that overlaps with the seventh conductive film, The eighth conductive film has a shape that extends across at least two adjacent pixels, The ninth conductive film has a shape that extends across at least two adjacent pixels. Light-emitting device.

4. The pixel portion includes a first to third transistor, a light-emitting element, a signal line, a current supply line, and wiring. The first transistor has the function of controlling the supply of current from the current supply line to the light-emitting element according to a signal corresponding to the image data input to the signal line. Either the source or the drain of the second transistor is electrically connected to the signal line. The second transistor has the function of controlling the input of a signal corresponding to the image data to the first transistor. The source or drain of the third transistor is electrically connected to the pixel electrode of the light-emitting element. The source or drain of the third transistor is a light-emitting device electrically connected to the wiring, A first conductive film having the function of a first gate electrode of the first transistor, A semiconductor film having a region positioned above the first conductive film and having a channel formation region for the first transistor, A second conductive film having a region positioned above the semiconductor film and functioning as the second gate electrode of the first transistor, A first insulating film having a region positioned above the second conductive film, A third conductive film having a region positioned above the first insulating film, A fourth conductive film having a region positioned above the first insulating film, A fifth conductive film having a region positioned above the first insulating film and electrically connected to the second conductive film, A sixth conductive film having a region positioned above the first insulating film, A seventh conductive film having a region positioned above the first insulating film and functioning as wiring, A second insulating film having a region positioned above the third conductive film, a region positioned above the fourth conductive film, a region positioned above the fifth conductive film, a region positioned above the sixth conductive film, and a region positioned above the seventh conductive film, An eighth conductive film having a region positioned above the second insulating film, electrically connected to the fourth conductive film, and functioning as the current supply line, A ninth conductive film having a region positioned above the second insulating film, electrically connected to the sixth conductive film, and functioning as the signal line, Each of the third conductive film, the fourth conductive film, the fifth conductive film, the sixth conductive film, and the seventh conductive film has a region in contact with the second insulating film. The third conductive film is electrically connected to the pixel electrode of the light-emitting element. The eighth conductive film has a region that overlaps with the second conductive film, The eighth conductive film has a region that overlaps with the seventh conductive film, The eighth conductive film has a shape that extends across at least two adjacent pixels, The ninth conductive film has a shape that extends across at least two adjacent pixels. Light-emitting device.

5. In any one of claims 1 to 4, The two adjacent pixels are arranged in a direction that intersects with the scan line, which is electrically connected to at least one of the gate electrodes of the second transistor and the gate electrode of the third transistor. Light-emitting device.

6. In any one of claims 1 to 5, Each of the third to seventh conductive films comprises a first film containing titanium or titanium nitride, a second film containing aluminum on the first film, and a third film containing titanium or titanium nitride on the second film. Light-emitting device.

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